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Sample records for deposition mocvd technique

  1. Deposition studies and coordinated characterization of MOCVD YBCO films on IBAD-MgO templates

    International Nuclear Information System (INIS)

    Aytug, T; Paranthaman, M; Heatherly, L; Zuev, Y; Zhang, Y; Kim, K; Goyal, A; Maroni, V A; Chen, Y; Selvamanickam, V

    2009-01-01

    A recently installed research-scale metal-organic chemical vapor deposition (MOCVD) system at Oak Ridge National Laboratory, provided by SuperPower, Inc., has been used to investigate processing variables for MOCVD YBCO precursors and trends in the resulting properties. Systematic studies of YBCO film growth on LaMnO 3 /IBAD-MgO templates were carried out by optimizing deposition temperature and oxygen flow rate. Microstructural and superconducting properties of the YBCO films were analyzed by x-ray diffraction, scanning electron microscopy and transport measurements. The identification of intermediate phases formed during the YBCO precursor transformation was investigated by coordinated reel-to-reel Raman microprobe analysis. With this combination of various characterization techniques, an improved understanding of the growth characteristics of MOCVD YBCO films was established. Finally, critical current densities greater than 2 MA cm -2 for film thicknesses of 0.8 μm were demonstrated.

  2. Deposition studies and coordinated characterization of MOCVD YBCO films on IBAD-MgO templates

    Energy Technology Data Exchange (ETDEWEB)

    Aytug, T; Paranthaman, M [Oak Ridge National Laboratory, Chemical Sciences Division, Oak Ridge, TN 37831 (United States); Heatherly, L; Zuev, Y; Zhang, Y; Kim, K; Goyal, A [Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, TN 37831 (United States); Maroni, V A [Argonne National Laboratory, Chemical Sciences and Engineering Division, Argonne, IL 60439 (United States); Chen, Y; Selvamanickam, V [SuperPower, Incorporated, 450 Duane Avenue, Schenectady, NY 12304 (United States)], E-mail: aytugt@ornl.gov

    2009-01-15

    A recently installed research-scale metal-organic chemical vapor deposition (MOCVD) system at Oak Ridge National Laboratory, provided by SuperPower, Inc., has been used to investigate processing variables for MOCVD YBCO precursors and trends in the resulting properties. Systematic studies of YBCO film growth on LaMnO{sub 3}/IBAD-MgO templates were carried out by optimizing deposition temperature and oxygen flow rate. Microstructural and superconducting properties of the YBCO films were analyzed by x-ray diffraction, scanning electron microscopy and transport measurements. The identification of intermediate phases formed during the YBCO precursor transformation was investigated by coordinated reel-to-reel Raman microprobe analysis. With this combination of various characterization techniques, an improved understanding of the growth characteristics of MOCVD YBCO films was established. Finally, critical current densities greater than 2 MA cm{sup -2} for film thicknesses of 0.8 {mu}m were demonstrated.

  3. In-situ deposition of YBCO high-Tc superconducting thin films by MOCVD and PE-MOCVD

    International Nuclear Information System (INIS)

    Zhao, J.; Noh, D.W.; Chern, C.; Li, Y.Q.; Norris, P.E.; Kear, B.; Gallois, B.

    1991-01-01

    Metal-Organic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T(sub c) greater than 90 K and J(sub c) of approximately 10(exp 4) A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology

  4. The effects of H sub 2 addition on the enhanced deposition rate and high quality Cu films by MOCVD

    CERN Document Server

    Lee, J H; Park, S J; Choi, S Y

    1998-01-01

    High-quality Cu thin films were deposited on the TiN/Si substrate from the hexafluoroacetylacetonate Copper thrmethylvinylsilane [Cu (hfac) (tmvs)] source using a metal organic chemical vapor deposition (MOCVD) technique. The optimum deposition condition is with a substrate temperature of 200 .deg. C and the hydrogen flow rate of 80 sccm. The deposition rate, electrical resistivity, surface morphology, grain size, and optical properties of the deposited Cu films were investigated by the AES, four-point probe, SEM, XRD, and the visible spectrophotometer as a function of hydrogen gas flow rate, The results indicated that additional hydrogen gas affects the CVD hydrogen reduction reaction improving the purity, deposition rate, and electrical resistivity of Cu thin films. A prospective idea will be discussed for the preparation of Cu thin films showing a more enhanced electromigration resistance applicable to the next-generation interconnection.

  5. MOCVD and ALD of rare earth containing multifunctional materials. From precursor chemistry to thin film deposition and applications

    International Nuclear Information System (INIS)

    Milanov, Andrian Petrov

    2010-01-01

    The present thesis deals with the development of metal-organic complexes of rare elements. They should be used as novel precursors for the production of rare earth thin films by metal-organic chemical vapor deposition (MOCVD) and Atomic Layer Deposition (ALD). Within the work two precursor classes were examined, the tris-Malonato-complexes as well as the tris-Guanidinato-complexes of a series of rare earth metals. The latter showed excellent properties regarding to their volatility, their thermal stability, the defined decomposition and high reactivity towards water. They have been successfully used as precursors for the MOCVD of rare earth oxide layers. By using of a gadolinium guanidinate it could also be shown that the rare earth guanidinates are promising precursors for ALD of rare earth oxide and MOCVD of rare earth nitride layers. [de

  6. Friction and wear behavior of nitrogen-doped ZnO thin films deposited via MOCVD under dry contact

    Directory of Open Access Journals (Sweden)

    U.S. Mbamara

    2016-06-01

    Full Text Available Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS and X-ray Diffraction (XRD. The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-face surfaces were examined to assess the wear dimension and failure mechanism. Both friction behavior and wear (in the ball counter-face were observed to be dependent on the crystallinity and thickness of the thin film coatings.

  7. Advanced characterization techniques of nonuniform indium distribution within InGaN/GaN heterostructures grown by MOCVD

    International Nuclear Information System (INIS)

    Lu, D.; Florescu, D.I.; Lee, D.S.; Ramer, J.C.; Parekh, A.; Merai, V.; Li, S.; Begarney, M.J.; Armour, E.A.; Gardner, J.J.

    2005-01-01

    Nonuniform indium distribution within InGaN/GaN single quantum well (SQW) structures with nanoscale islands grown by metalorganic chemical vapor deposition (MOCVD) have been characterized by advanced characterization techniques. Robinson backscattered electron (BSE) measurements show cluster-like BSE contrast of high brightness regions, which are not centered at small dark pits in a SQW structure of spiral growth mode. By comparing with the secondary electron (SE) images, the bright cluster areas from the BSE images were found to have higher indium content compared to the surrounding dark areas. Temperature dependant photoluminescence (PL) measurement shows typical ''S-shape'' curve, which shows good correlation with nonuniform indium distribution from BSE measurement. Optical evaluation of the samples show increased PL slope efficiency of the spiral mode SQW, which can be attributed to the presence of Indium inhomogeneities. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Characterisation of titanium nitride films obtained by metalorganic chemical vapor deposition (MOCVD); Caracterizacao de filmes de nitreto de titanio obtidos por MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pillis, M.F., E-mail: mfpillis@ipen.b [Instituto de Pesquisas Energeticas e Nucleares (CCTM/IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Ciencia e Tecnologia de Materiais; Franco, A.C. [Universidade de Sao Paulo (IF/USP), SP (Brazil). Inst. de Fisica; Araujo, E.G. de [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Sacilotti, M. [Universidade Federal de Pernambuco (IF/UFPE), Recife, PE (Brazil). Inst. de Fisica; Fundacao de Amparo a Ciencia e Tecnologia de Pernambuco (FACEPE), Recife, PE (Brazil)

    2009-07-01

    Ceramic coatings have been widely used as protective coating to improve the life of cutting tools, for corrosion protection and in microelectronics, optical and medical areas. Transition metals nitrides are of special interest due to its high hardness and thermal stability. In this work thin films of titanium nitride were obtained by MOCVD (metalorganic chemical vapor deposition) process. The tests were carried out for 1h at 700 deg C under 80 and 100 mbar of pressure. The characterization was made by using scanning electron microscopy coupled with dispersive energy analysis, and X-ray diffraction. Preliminary results suggested that Ti{sub 2}N phase was formed and that the growth rate varied between 4 and 13 nm/min according to the process parameter considered. (author)

  9. Influence of the growth parameters on TiO2 thin films deposited using the MOCVD method

    Directory of Open Access Journals (Sweden)

    Bernardi M. I. B.

    2002-01-01

    Full Text Available In this work we report the synthesis of TiO2 thin films by the Organometallic Chemical Vapor Deposition (MOCVD method. The influence of deposition parameters used during the growth in the obtained structural characteristics was studied. Different temperatures of the organometallic bath, deposition time, temperature and type of the substrate were combined. Using Scanning Electron Microscopy associated to Electron Dispersive X-Ray Spectroscopy, Atomic Force Microscopy and X-ray Diffraction, the strong influence of these parameters in the thin films final microstructure was verified.

  10. Preparation of YBCO on YSZ layers deposited on silicon and sapphire by MOCVD: influence of the intermediate layer on the quality of the superconducting film

    International Nuclear Information System (INIS)

    Garcia, G.; Casado, J.; Llibre, J.; Doudkowski, M.; Santiso, J.; Figueras, A.; Schamm, S.; Dorignac, D.; Grigis, C.; Aguilo, M.

    1995-01-01

    YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO 2 amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an in-plane texture defined by the following relationships: (100) YSZ // (1-102) sapphire and (110) YSZ // (01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers. (orig.)

  11. Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

    Science.gov (United States)

    Li, Jian; Fei, Ze-yuan; Xu, Yi-feng; Wang, Jie; Fan, Bing-feng; Ma, Xue-jin; Wang, Gang

    2018-02-01

    Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality.

  12. Effect of deposition conditions on the growth rate and electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Roro, K.T.; Botha, J.R.; Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2008-07-01

    ZnO thin films have been grown on glass substrates by MOCVD. The effect of deposition conditions such as VI/II molar ratio, DEZn flow rate and total reactor pressure on the growth rate and electrical properties of the films was studied. It is found that the growth rate decreases with an increase in the VI/II molar ratio. This behaviour is ascribed to the competitive adsorption of reactant species on the growth surface. The growth rate increases with an increase in DEZn flow rate, as expected. It is shown that the carrier concentration is independent of the DEZn flow rate. An increase in the total reactor pressure yields a decrease in growth rate. This phenomenon is attributed to the depletion of the gas phase due to parasitic prereactions between zinc and oxygen species at high pressure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Deposition of Y-Sm Oxide on Metallic Substrates for the YBCO Coated Conductor by MOCVD Method

    International Nuclear Information System (INIS)

    Choi, Jun Kyu; Kim, Min Woo; Jun, Byung Hyuk; Kim, Chan Joong; Lee, Hee Gyoun; Hong, Gye Won

    2005-01-01

    Complex single buffer composed of yttrium and samarium oxide was deposited on the metallic substrates by MOCVD (metal organic chemical vapor deposition) method using single liquid source. Two different types of the substrates with in-plane textures of about 8 - 10 degree of Ni and 3at.%W-Ni alloy were used. Y(tmhd: 2,2,6,6-tetramethyl-3,5-heptane dionate) 3 :Sm(tmhd) 3 of liquid source was adjusted to 0.4:0.6 to minimize the lattice mismatch between the complex single buffer and the YBCO. The epitaxial growth of (Y x Sm 1-x ) 2 O 3 was achieved at the temperature higher than 500 degree C in O 2 atmosphere. However, it was found that the formation of NiO accelerated with increasing deposition temperature. By supplying H 2 O vapor, this oxidation of the substrate could be suppressed throughout the deposition temperatures. We could get the epitaxial growth on pure Ni substrate without the formation of NiO. The competitive (222) and (400) growths were observed at the deposition temperatures of 650 - 750 degree C, but the (400) growth became dominant above 800 degree. The (Y x Sm 1-x ) 2 O 3 -buffered metallic substrates can be used as the buffer for YBCO coated conductor.

  14. YBa2Cu3O7-δ thin films deposited by MOCVD vertical reactor with a flow guide

    International Nuclear Information System (INIS)

    Sujiono, E.H.; Negeri Makassar; Sani, R.A.; Saragi, T.; Arifin, P.; Barmawi, M.

    2001-01-01

    The effect of a flow guide in a vertical MOCVD reactor on the deposition uniformity and growth rate of thin YBCO films has been studied. Without the flow guide the growth rates are low, have a poor uniformity and the film composition is not stoichiometric. The growth rate of the films grown using a reactor with the flow guide was approximately twice that without the flow guide. Using this flow guide the growth rates were 0.4-0.7 μm/h for growth temperatures varying between 600 and 750 C, and the crystalline quality as well as the surface morphology of YBCO films on MgO substrates is improved. For films grown at temperatures above 650 C the composition of Y:Ba:Cu is 1:2:3, as confirmed by EDAX spectra. Films deposited without and with the flow guide at 700 C have critical temperatures around 85 and 88 K, respectively. The reduction in ΔT c (T c,zero -T c,onset ) also shows an improvement of the superconducting properties of YBCO thin films deposited with a flow guide. (orig.)

  15. Model Research On Deposition Of Pure Aluminium Oxide Layers By MOCVD Method

    Directory of Open Access Journals (Sweden)

    Sawka A.

    2015-06-01

    Full Text Available The purpose of this research is to develop an optimal method for synthesizing of nanocrystalline Al2O3 monolayers at high growth rates on cemented carbides coated with an intermediate layer of pre-Al2O3-C (composite layers Al2O3-C/Al2O3. The use of quartz glass substrate allows for obtaining information about the quality of the layers such the thickness and density, because of its high transparency. The Al2O3 layers that do not containing carbon were synthesized on quartz glass by MOCVD using aluminum acetylacetonate and air as the reactants at temperatures of 700-1000°C. Argon was also a carrier gas. The resulting layers were transparent, as homogeneous nucleation did not occur during the synthesis process. The layers synthesized at lower temperatures were subjected to a crystallization process at temperatures above 900°C. The crystallization process was studied as a function of time and temperature. The obtained layers were characterized by their nanocrystalline microstructure.

  16. Preparation and microstructural properties of erbium doped alumina–yttria oxide thin films deposited by aerosol MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Salhi, Rached, E-mail: salhi_rached@yahoo.fr [Laboratoire de Science et Ingénierie des MAtériaux et Procédés 1130 rue de la PiscineBP 75-F-38402 Saint Martin D’Hères Cedex 1 (France); Laboratoire des Matériaux et du Génie Physique, CNRS UMR 5628, INP Grenoble-Minatec, 3 parvis Louis Néel BP 257, 38 016 Grenoble Cedex 1 (France); Jimenez, Carmen; Deschanvres, Jean-Luc [Laboratoire des Matériaux et du Génie Physique, CNRS UMR 5628, INP Grenoble-Minatec, 3 parvis Louis Néel BP 257, 38 016 Grenoble Cedex 1 (France); Guyot, Yannick [LPCML-UMR 5620 CNRS/UCBL Universite´ Claude Bernard Lyon 110 Rue Ada Byron 69622 Villeurbanne Cedex (France); Chaix-Pluchery, Odette; Rapenne, Laetitia [Laboratoire des Matériaux et du Génie Physique, CNRS UMR 5628, INP Grenoble-Minatec, 3 parvis Louis Néel BP 257, 38 016 Grenoble Cedex 1 (France); Maâlej, Ramzi [LPCML-UMR 5620 CNRS/UCBL Universite´ Claude Bernard Lyon 110 Rue Ada Byron 69622 Villeurbanne Cedex (France); Fourati, Mohieddine [Laboratoire de Chimie Industrielle, Ecole Nationale d’Ingénieur de Sfax, University of Sfax BP W 3038 Sfax (Tunisia); Laboratoire de Physique Appliquée, Groupe de Physique Théorique, Département de Physique, Faculté des Sciences de Sfax, University of Sfax 3018 Sfax (Tunisia)

    2013-10-15

    Erbium-doped aluminum–yttrium oxide films (Er: Al{sub 2}O{sub 3}–Y{sub 2}O{sub 3}) were prepared by aerosol-UV assisted Metalorganic Chemical Vapor Deposition (MOCVD) at 410 °C and annealed at 1000 °C. The effects of humidity of carrier gas and UV-assistance on their structure and optical properties were investigated using scanning electron microscope, X-ray diffraction and Transmission electron microscopy. It was found that under low air humidity and without UV-assistance the films present a low mol% Al{sub 2}O{sub 3} (10 mol%) two different structural phases are observed corresponding to the cubic and the monoclinic structures of Y{sub 2}O{sub 3}. When the deposition takes place under high air humidity and with UV assistance the Er:Al{sub 2}O{sub 3}–Y{sub 2}O{sub 3} films present a very high mol% Al{sub 2}O{sub 3} (88 mol%) and crystallize in the Y{sub 3}Al{sub 5}O{sub 12} (YAG) compound mixed with an amorphous phase. The Er{sup 3+} luminescence analyzed in the visible and IR regions, shows the classical green transitions. The best optical properties were obtained with the Er:Al{sub 2}O{sub 3}–Y{sub 2}O{sub 3} films grown under high air humidity with UV-assistance. Under such deposition conditions, {sup 4}I{sub 13/2} lifetimes was found to be 1.1 ms. This indicates that the deposition conditions, in particular air humidity, play an important role in the luminescent properties even after annealing. -- Highlights: • We investigate the effects of humidity and UV on the properties of Er:Al{sub 2}O{sub 3}–Y{sub 2}O{sub 3}. • Under low air humidity and without UV-assistance the films present a low mol% Al{sub 2}O{sub 3}. • Under high air humidity and with UV the Er:Al{sub 2}O{sub 3}–Y{sub 2}O{sub 3} present high mol% Al{sub 2}O{sub 3}. • The film crystallize in the YAG phase mixed with an amorphous phase. • The best optical properties were obtained under high air humidity with UV-assistance.

  17. Recent developments in the MOCVD and ALD of rare earth oxides and silicates

    International Nuclear Information System (INIS)

    Jones, Anthony C.; Aspinall, Helen C.; Chalker, Paul R.; Potter, Richard J.; Kukli, Kaupo; Rahtu, Antti; Ritala, Mikko; Leskelae, Markku

    2005-01-01

    Lanthanide, or rare-earth oxides are currently being investigated as alternatives to SiO 2 as the dielectric insulating layer in sub-0.1 μm CMOS technology. Metalorganic chemical vapour deposition (MOCVD) and atomic layer deposition (ALD) are promising techniques for the deposition of these high-κ dielectric oxides and in this paper some of our recent research into the MOCVD and ALD of PrO x , La 2 O 3 , Gd 2 O 3 , Nd 2 O 3 and their related silicates are reviewed

  18. Optimization of Strontium Titanate (SrTiO3) Thin Films Fabricated by Metal Organic Chemical Vapor Deposition (MOCVD) for Microwave-Tunable Devices

    Science.gov (United States)

    2015-12-01

    characteristics . Our work demonstrated a significant increase in the quality of the optimized STO thin films with respect to STO films grown prior to the MOCVD...deposition, the reactor and precursor supply lines were baked at 250 °C for at least 4 h with a total Ar carrier gas flow of 5,000 sccm to remove...S. Thermal leakage characteristics of Pt/SrTiO3/Pt structures. Journal of Vacuum Science & Technology A. 2008;26:555–557. 31. Ryen L, Olsson E

  19. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.

    Science.gov (United States)

    Ra, Yong-Ho; Navamathavan, R; Park, Ji-Hyeon; Lee, Cheul-Ro

    2013-03-01

    This article describes the growth and device characteristics of vertically aligned high-quality uniaxial p-GaN/InxGa1-xN/GaN multiple quantum wells (MQW)/n-GaN nanowires (NWs) on Si(111) substrates grown by metal-organic chemical vapor deposition (MOCVD) technique. The resultant nanowires (NWs), with a diameter of 200-250 nm, have an average length of 2 μm. The feasibility of growing high-quality NWs with well-controlled indium composition MQW structure is demonstrated. These resultant NWs grown on Si(111) substrates were utilized for fabricating vertical-type light-emitting diodes (LEDs). The steep and intense photoluminescence (PL) and cathodoluminescence (CL) spectra are observed, based on the strain-free NWs on Si(111) substrates. High-resolution transmission electron microscopy (HR-TEM) analysis revealed that the MQW NWs are grown along the c-plane with uniform thickness. The current-voltage (I-V) characteristics of these NWs exhibited typical p-n junction LEDs and showed a sharp onset voltage at 2.75 V in the forward bias. The output power is linearly increased with increasing current. The result indicates that the pulsed MOCVD technique is an effective method to grow uniaxial p-GaN/InxGa1-xN/GaN MQW/n-GaN NWs on Si(111), which is more advantageous than other growth techniques, such as molecular beam epitaxy. These results suggest the uniaxial NWs are promising to allow flat-band quantum structures, which can enhance the efficiency of LEDs.

  20. Growth and characterization of germanium epitaxial film on silicon (001 with germane precursor in metal organic chemical vapour deposition (MOCVD chamber

    Directory of Open Access Journals (Sweden)

    Kwang Hong Lee

    2013-09-01

    Full Text Available The quality of germanium (Ge epitaxial film grown directly on a silicon (Si (001 substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD system is studied. The growth sequence consists of several steps at low temperature (LT at 400 °C, intermediate temperature ramp (LT-HT of ∼10 °C/min and high temperature (HT at 600 °C. This is followed by post-growth annealing in hydrogen at temperature ranging from 650 to 825 °C. The Ge epitaxial film of thickness ∼ 1 μm experiences thermally induced tensile strain of 0.11 % with a treading dislocation density (TDD of ∼107/cm2 and the root-mean-square (RMS roughness of ∼ 0.75 nm. The benefit of growing Ge epitaxial film using MOCVD is that the subsequent III-V materials can be grown in-situ without the need of breaking the vacuum hence it is manufacturing worthy.

  1. Characterization of long-length, MOCVD-derived REBCO coated conductors.

    Energy Technology Data Exchange (ETDEWEB)

    Miller, D. J.; Maroni, V. A.; Hiller, J. M.; Koritala, R. E.; Chen, Y.; Reeves Black, J. L.; Selvamanickam, V.; SuperPower, Inc.; Development Dimensions International, Inc.

    2009-06-01

    A leading approach to the fabrication of long-length, high-performance REBa{sub 2}Cu{sub 3}O{sub 7} (REBCO) coated conductor is by metal-organic chemical vapor deposition (MOCVD) of REBCO on buffered templates. Templates are produced by ion beam assisted deposition of textured MgO onto polished metal substrates. The overall performance of MOCVD coated conductors achieved to date is impressive, but further improvement is desired. We have used a coordinated set of characterization techniques to identify the underlying causes for critical current (Ic) performance variations in long-length MOCVD conductors. Using electron microscopy and Raman spectroscopy, we studied tape specimens from specially designed experiments performed in SuperPower's MOCVD manufacturing equipment with its six-track ldquohelixrdquo tape path. We find that in multi-pass depositions used to produce thicker REBCO films, the REBCO phase uniformity and texture quality in the first pass play key roles in pass-to-pass microstructure evolution, with nucleation of second phase particles in the first layer promoting misoriented grains that propagate through subsequent layers. These misoriented grains, many growing in close proximity with second phase particles, present current-blocking obstacles that limit Ic performance. Our results show that achieving more uniform deposition in the very first deposited layer plays a critical role that in turn leads to reduced misoriented grain content and REBCO lattice disorder in the second and subsequent layers of the REBCO film.

  2. MOCVD coating deposition of yttrium stabilized zirconia as backing for high-temperature superconductors on flexible substrates

    International Nuclear Information System (INIS)

    Jakschik, F.; Berger, W.; Seifert, L.; Nowick, W.; Leonhardt, G.

    1993-01-01

    The coating of carbon fibers with YSZ by means of the presented MOCVD process showed that in the bundle at temperatures between 500 - 600 C the coating thickness drops toward the center of the bundle. Sufficient homogeneity can be achieved only when the precipitation rate is selected slow enough to prevent the bundle edge from closing, or when the bundle is spread sufficiently open. The layers are on one hand ZrO 2 with incorporated carbon and on the other hand yttrium stabilized ZrO 2 with incorporated carbon. In both cases exclusively the cubic phase of the oxide was detected. The morphology of layers revealed only slight roughness with incorporation of relatively large nodules consisting of YSZ, caused by homogeneous gas phase reactions which are to be prevented. (orig.) [de

  3. YSZ thin films deposited on NiO-CSZ anodes by pulsed injection MOCVD for intermediate temperature-SOFC applications

    International Nuclear Information System (INIS)

    Garcia, G.; Pardo, J.A.; Santiso, J.; Merino, R.I.; Orera, V.M.; Larrea, A.; Pena, J.I.; Laguna-Bercero, M.A.; Figueras, A.

    2004-01-01

    Yttria-stabilized zirconia (YSZ) films are prepared on NiO-CaSZ by PIMOCVD (pulsed injection metal organic chemical vapor deposition). High quality, 5 to 10 μm thick, totally dense YSZ layers are prepared by controlling the oxygen partial pressure during the deposition. YSZ solid electrolyte deposition onto Ni-YSZ eutectic substrate is found to be a promising combination with regard to intermediate-temperature solid-oxide fuel cell applications. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  4. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

  5. HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

    International Nuclear Information System (INIS)

    Caymax, M.; Van Elshocht, S.; Houssa, M.; Delabie, A.; Conard, T.; Meuris, M.; Heyns, M.M.; Dimoulas, A.; Spiga, S.; Fanciulli, M.; Seo, J.W.; Goncharova, L.V.

    2006-01-01

    To fabricate MOS gate stacks on Ge, one can choose from a multitude of metal oxides as dielectric material which can be deposited by many chemical or physical vapor deposition techniques. As a few typical examples, we will discuss here the results from atomic layer deposition (ALD), metal organic CVD (MOCVD) and molecular beam deposition (MBD) using HfO 2 /Ge as materials model system. It appears that a completely interface layer free HfO 2 /Ge combination can be made in MBD, but this results in very bad capacitors. The same bad result we find if HfGe y (Hf germanides) are formed like in the case of MOCVD on HF-dipped Ge. A GeO x interfacial layer appears to be indispensable (if no other passivating materials are applied), but the composition of this interfacial layer (as determined by XPS, TOFSIMS and MEIS) is determining for the C/V quality. On the other hand, the presence of Ge in the HfO 2 layer is not the most important factor that can be responsible for poor C/V, although it can still induce bumps in C/V curves, especially in the form of germanates (Hf-O-Ge). We find that most of these interfacial GeO x layers are in fact sub-oxides, and that this could be (part of) the explanation for the high interfacial state densities. In conclusion, we find that the Ge surface preparation is determining for the gate stack quality, but it needs to be adapted to the specific deposition technique

  6. Hardware Modifications to the US Army Research Laboratory’s Metalorganic Chemical Vapor Deposition (MOCVD) System for Optimization of Complex Oxide Thin Film Fabrication

    Science.gov (United States)

    2015-04-01

    the total absorbance, or the fraction of radiation absorbed at the measured wavelength; is the calculated molar extinction coefficient for the...of PZT thin films by liquid delivery MOCVD. Integrated Ferroelectrics. 2002;46:125–131. 14. Hiskes R, Dicarolis SA, Jacowitz RD, Lu Z, Feigelson RS

  7. Spray deposition using impulse atomization technique

    International Nuclear Information System (INIS)

    Ellendt, N.; Schmidt, R.; Knabe, J.; Henein, H.; Uhlenwinkel, V.

    2004-01-01

    A novel technique, impulse atomization, has been used for spray deposition. This single fluid atomization technique leads to different spray characteristics and impact conditions of the droplets compared to gas atomization technique which is the common technique used for spray deposition. Deposition experiments with a Cu-6Sn alloy were conducted to evaluate the appropriateness of impulse atomization to produce dense material. Based on these experiments, a model has been developed to simulate the thermal history and the local solidification rates of the deposited material. A numerical study shows how different cooling conditions affect the solidification rate of the material

  8. Final report on LDRD project : outstanding challenges for AlGaInN MOCVD.

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, Christine Charlotte; Follstaedt, David Martin; Russell, Michael J.; Cross, Karen Charlene; Wang, George T.; Creighton, James Randall; Allerman, Andrew Alan; Koleske, Daniel David; Lee, Stephen Roger; Coltrin, Michael Elliott

    2005-03-01

    The AlGaInN material system is used for virtually all advanced solid state lighting and short wavelength optoelectronic devices. Although metal-organic chemical vapor deposition (MOCVD) has proven to be the workhorse deposition technique, several outstanding scientific and technical challenges remain, which hinder progress and keep RD&A costs high. The three most significant MOCVD challenges are: (1) Accurate temperature measurement; (2) Reliable and reproducible p-doping (Mg); and (3) Low dislocation density GaN material. To address challenge (1) we designed and tested (on reactor mockup) a multiwafer, dual wavelength, emissivity-correcting pyrometer (ECP) for AlGaInN MOCVD. This system simultaneously measures the reflectance (at 405 and 550 nm) and emissivity-corrected temperature for each individual wafer, with the platen signal entirely rejected. To address challenge (2) we measured the MgCp{sub 2} + NH{sub 3} adduct condensation phase diagram from 65-115 C, at typical MOCVD concentrations. Results indicate that it requires temperatures of 80-100 C in order to prevent MgCp{sub 2} + NH{sub 3} adduct condensation. Modification and testing of our research reactor will not be complete until FY2005. A new commercial Veeco reactor was installed in early FY2004, and after qualification growth experiments were conducted to improve the GaN quality using a delayed recovery technique, which addresses challenge (3). Using a delayed recovery technique, the dislocation densities determined from x-ray diffraction were reduced from 2 x 10{sup 9} cm{sup -2} to 4 x 10{sup 8} cm{sup -2}. We have also developed a model to simulate reflectance waveforms for GaN growth on sapphire.

  9. Structural characterization of one-dimensional ZnO-based nanostructures grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Sallet, Vincent; Falyouni, Farid; Marzouki, Ali; Haneche, Nadia; Sartel, Corinne; Lusson, Alain; Galtier, Pierre [Groupe d' Etude de la Matiere Condensee (GEMAC), CNRS-Universite de Versailles St-Quentin, Meudon (France); Agouram, Said [SCSIE, Universitat de Valencia, Burjassot (Spain); Enouz-Vedrenne, Shaima [Thales Research and Technology France, Palaiseau (France); Munoz-Sanjose, Vicente [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, Burjassot (Spain)

    2010-07-15

    Various one-dimensional (1D) ZnO-based nanostructures, including ZnO nano-wires (NWs) grown using vapour-liquid-solid (VLS) process, ZnO/ZnSe core/shell, nitrogen-doped ZnO and ZnMgO NWs were grown by metalorganic chemical vapour deposition (MOCVD). Transmission electron microscopy (TEM) analysis is presented. For all the samples, a high crystalline quality is observed. Some features are emphasized such as the gold contamination of ZnO wires grown under the metal droplets in the VLS process. It is concluded that MOCVD is a suitable technique for the realization of original ZnO nanodevices. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  10. Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane

    Science.gov (United States)

    Kim, Youngjo; Kim, Kangho; Lee, Jaejin; Kim, Chang Zoo; Kang, Ho Kwan; Park, Won-Kyu

    2018-03-01

    Epitaxial Ge layers have been grown on Si (001) substrates by metalorganic chemical vapor deposition (MOCVD) using an isobutylgermane (IBuGe) metalorganic source. Low and high temperature two-step growth and post annealing techniques are employed to overcome the lattice mismatch problem between Ge and Si. It is demonstrated that high quality Ge epitaxial layers can be grown on Si (001) by using IBuGe with surface RMS roughness of 2 nm and an estimated threading dislocation density of 4.9 × 107 cm -2. Furthermore, single-junction Ge solar cells have been directly grown on Si substrates with an in situ MOCVD growth. The epitaxial Ge p- n junction structures are investigated with transmission electron microscopy and electrochemical C- V measurements. As a result, a power conversion efficiency of 1.69% was achieved for the Ge solar cell directly grown on Si substrate under AM1.5G condition.

  11. MOCVD waste gas treatment

    International Nuclear Information System (INIS)

    Geelen, A. van; Bink, P.H.M.; Giling, L.J.

    1993-01-01

    A large scale production of GaAs based solar cells with MOCVD will give rise to a considerable use of arsine. Therefore a gas treatment system is needed to convert the waste gases into less toxic compounds. In this study seven different gas treatment systems for MOCVD are compared by quantifying the environmental aspects. The systems are divided in wet systems, adsorption systems and thermal systems. The smallest amount of waste is produced by adsorption and thermal systems. Adsorption systems use the smallest amount of energy. The amount of primary materials used for the equipment varies per system. All systems are safe, but adsorption systems are simplest. At the moment, adsorption systems are probably the best choice from an environmental point of view. Nevertheless thermal systems have some potential advantages which make them interesting for the future

  12. High quality aluminide and thermal barrier coatings deposition for new and service exposed parts by CVD techniques

    Energy Technology Data Exchange (ETDEWEB)

    Pedraza, F.; Tuohy, C.; Whelan, L.; Kennedy, A.D. [SIFCO Turbine Components, Carrigtwohill, Cork (Ireland)

    2004-07-01

    In this work, the performance of CVD aluminide coatings is compared to that of coatings deposited by the classical pack cementation technique using standard SIFCO procedures. The CVD coatings always seem to behave better upon exposure to isothermal and cyclic oxidation conditions. This is explained by a longer term stability of CVD coatings, with higher Al amounts in the diffusion zone and less refractory element precipitation in the additive layer. The qualities of Pt/Al coatings by out-of-pack and CVD are also compared as a previous step for further thermal barrier coating deposition. As an example, YSZ thermal barrier coatings are deposited by MO-CVD on Pt/Al CVD bond coats rendering adherent and thick coatings around the surface of turbine blades. This process under development does not require complex manipulation of the component to be coated. (orig.)

  13. Study of TiO{sub 2} nanomembranes obtained by an induction heated MOCVD reactor

    Energy Technology Data Exchange (ETDEWEB)

    Crisbasan, A., E-mail: andreea.crisbasan@yahoo.com [NANOFORM Group, ICB, Université de Bourgogne, BP 47 870, 21078 Dijon (France); Chaumont, D. [NANOFORM Group, ICB, Université de Bourgogne, BP 47 870, 21078 Dijon (France); Sacilotti, M. [NANOFORM Group, ICB, Université de Bourgogne, BP 47 870, 21078 Dijon (France); Departamento de Fisica – Universidade Federal de Pernambuco, Recife (Brazil); Crisan, A.; Lazar, A.M.; Ciobanu, I. [Science and Materials Engineering Faculty, University of Transilvania, Brasov (Romania); Lacroute, Y.; Chassagnon, R. [Université de Bourgogne, BP 47 870, 21078 Dijon (France)

    2015-12-15

    Highlights: • The TiO{sub 2} structures have been obtained by the MOCVD technique using ferrocene, cobalt layer (annealed at 350 °C) and Ti(OC{sub 3}H{sub 7}){sub 4}. • The TiO{sub 2} growth at 550 °C, during 20 min on the cobalt layer (obtained by electron beam evaporation method) on soda-lime glass has as result TiO{sub 2} nanomembranes. • The TiO{sub 2} nanomembranes grow on the cobalt nuclei. • The TiO{sub 2} nanomembranes are polycrystalline, built from TiO{sub 2} anatase and rutile crystals. - Abstract: Nanostructures of TiO{sub 2} were grown using the metal oxide chemical vapor deposition (MOCVD) technique. The procedure used induction heating on a graphite susceptor. This specific feature and the use of cobalt and ferrocene catalysts resulted in nanomembranes never obtained by common MOCVD reactors. The present study discusses the preparation of TiO{sub 2} nanomembranes and the dependence of nanomembrane structure and morphology on growth parameters.

  14. Magnetic filtered plasma deposition and implantation technique

    CERN Document Server

    Zhang Hui Xing; Wu Xian Ying

    2002-01-01

    A high dense metal plasma can be produced by using cathodic vacuum arc discharge technique. The microparticles emitted from the cathode in the metal plasma can be removed when the metal plasma passes through the magnetic filter. It is a new technique for making high quality, fine and close thin films which have very widespread applications. The authors describe the applications of cathodic vacuum arc technique, and then a filtered plasma deposition and ion implantation system as well as its applications

  15. Fabrication of 100 A class, 1 m long coated conductor tapes by metal organic chemical vapor deposition and pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Selvamanickam, V.; Lee, H.G.; Li, Y.; Xiong, X.; Qiao, Y.; Reeves, J.; Xie, Y.; Knoll, A.; Lenseth, K

    2003-10-15

    SuperPower has been scaling up YBa{sub 2}Cu{sub 3}O{sub x}-based second-generation superconducting tapes by techniques such as pulsed laser deposition (PLD) using industrial laser and metal organic chemical vapor deposition (MOCVD). Both techniques offer advantage of high deposition rates, which is important for high throughput. Using highly-polished substrates produced in a reel-to-reel polishing facility and buffer layers deposited in a pilot ion beam assisted deposition facility, meter-long second-generation high temperature superconductor tapes have been produced. 100 A class, meter-long coated conductor tapes have been reproducibly demonstrated in this work by both MOCVD and PLD. The best results to date are 148 A over 1.06 m by MOCVD and 135 A over 1.1 m by PLD using industrial laser.

  16. Sputtering. [as deposition technique in mechanical engineering

    Science.gov (United States)

    Spalvins, T.

    1976-01-01

    This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

  17. Thermodynamic investigation of the MOCVD of copper films from bis ...

    Indian Academy of Sciences (India)

    Equilibrium concentrations of various condensed and gaseous phases have been thermodynamically calculated, using the free energy minimization criterion, for the metalorganic chemical vapour deposition (MOCVD) of copper films using bis(2,2,6,6-tetramethyl-3,5-heptadionato)copper(II) as the precursor material.

  18. Thermodynamic analysis of growth of iron oxide films by MOCVD ...

    Indian Academy of Sciences (India)

    Abstract. Thermodynamic calculations, using the criterion of minimization of total Gibbs free energy of the system, have been carried out for the metalorganic chemical vapour deposition (MOCVD) process involving the -ketoesterate complex of iron [tris(-butyl-3-oxo-butanoato)iron(III) or Fe(tbob)3] and molecular oxygen.

  19. The MOCVD challenge a survey of GaInAsp-InP and GaInAsp-GaAs for photonic and electronic device applications

    CERN Document Server

    Razeghi, Manijeh

    2010-01-01

    Introduction to Semiconductor Compounds III-V semiconductor alloys III-V semiconductor devices Technology of multilayer growth Growth Technology Metalorganic chemical vapor deposition New non-equilibrium growth techniques In situ Characterization during MOCVD Reflectance anisotropy and ellipsometry Optimization of the growth of III-V binaries by RDS RDS investigation of III-V lattice-matched heterojunctions RDS investigation of III-V lattice-mismatched structures Insights on the growt

  20. Growth and characterization of InP/GaAs on SOI by MOCVD

    International Nuclear Information System (INIS)

    Karam, N.H.; Haven, V.; Vernon, S.M.; Namavar, F.; El-Masry, N.; Haegel, N.; Al-Jassin, M.M.

    1990-01-01

    This paper reports that epitaxial InP films have been successfully deposited on GaAs coated silicon wafers with a buried oxide for the first time by MOCVD. The SOI wafers were prepared using the Separation by Implantation of Oxygen (SIMOX) process. The quality of InP on SIMOX is comparable to the best of InP on Si deposited in the same reactor. Preliminary results on defect reduction techniques such as Thermal Cycle Growth (TCG) show an order of magnitude increase in the photoluminescence intensity and a factor of five reduction in the defect density. TCG has been found more effective than Thermal Cycle Annealing (TCA) in improving the crystalline perfection and optical properties of the deposited films

  1. Techniques for freeing deposited canisters. Final report

    International Nuclear Information System (INIS)

    Kalbantner, P.; Sjoeblom, R.

    2000-06-01

    Four different techniques for removal of the bentonite buffer around a deposited canister have been identified, studied and evaluated: mechanical, hydrodynamical, thermal, and electrical techniques. Different techniques to determine the position of the canister in the buffer have also been studied: mechanical, electromagnetic, thermal and acoustic techniques. The mechanical techniques studied are full-face boring, milling and core-drilling. It is expected that the bentonite can be machined relatively easily. It is assessed that cooling by means of flushing water over the outer surfaces of the tools is not feasible in view of the tendency of bentonite to form a gel. The mechanical techniques are characterized by the potential of damaging the canister, a high degree of complexity, and high requirements of energy/power input. The generated byproduct is solid and cannot be removed by means of flushing. Removal is assessed to be simplest in conjunction with full-face boring and most difficult when coredrilling is applied. The hydrodynamical techniques comprise high-pressure hydrodynamic techniques, where pressures above and below 100 bar, and low pressure hydrodynamical techniques (< 10 bar) are separated. At pressures above 100 bar, a water jet with a diameter of approximately a millimetre cuts through the material. If desired, sand can be added to the jet. At pressures below 100 bar the jet has a diameter of one or a few centimetres. The liquid contains a few percent of salt, which is essential for the efficiency of the process. The flushing is important not only because it removes the modified bentonite but also because it frees previously unaffected bentonite and thereby makes it accessible to chemical modification. All of the hydrodynamical techniques are applicable for freeing the end surface as well as the mantle surface. The degree of complexity and the requirement on energy/power decrease with a decrease in pressure. A significant potential for damaging the

  2. New principle of feeding for flash evaporation MOCVD devices

    International Nuclear Information System (INIS)

    Kaul, A.R.; Seleznev, B.V.

    1993-01-01

    A novel scheme of flash evaporation feeding for MOCVD processes of multi-component oxide films deposition is proposed. The scheme comprises 1) microdozage of organic solution of solid volatile precursors on the glass fiber belt, 2) evaporation of the solvent and 3) flash evaporation of MOC microdoses from the belt. The functioning of the designed feeder is described and the features of proposed scheme in comparison to existing feeding principles are discussed. (orig.)

  3. 10 GHz surface impedance measurements of (Y9Er)BaCuO films produced by MOCVD, laser ablation, and sputtering

    International Nuclear Information System (INIS)

    Luine, J.; Daly, K.; Hu, R.; Kain, A.; Lee, A.; Manasevit, H.; Pettiette-Hall, C.; Simon, R.; St John, D.; Wagner, M.

    1991-01-01

    This paper reports on a parallel-plate resonator technique previously used to measure microwave surface resistance R s (T) extended to also measure absolute penetration depth λ(T). Measurements of both quantities near 10 GHz from 4.2 K to Tc are reported for ErBaCuO thin films produced by metal-organic chemical vapor deposition (MOCVD) and YBaCuO think films produced by laser ablation and single-target off-axis sputtering. All the films were made at TRW. Each production method gives rise to films whose surface resistance is below 1 milliohm at temperatures below 40K. The low temperature penetration depths range from 250 nm for the laser ablation and sputtered films to 800 nm for the MOCVD films. The penetration depths in all cases increase with temperature according to the Gorter-Casimir temperature dependence

  4. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  5. Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD

    Science.gov (United States)

    Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Xu, Bingshe

    2018-05-01

    GaN polycrystalline films were successfully grown on amorphous SiO2 by metal-organic chemical vapour deposition to fabricate transferable devices using inorganic films. Field-emission scanning electron microscopy images show that by prolonging the annealing time, re-evaporation is enhanced, which reduced the uniformity of the nucleation layer and GaN films. X-ray diffraction patterns indicate that the decomposition rate of the nucleation layer increases when the annealing flow rate of NH3 is 500 sccm, which makes the unstable plane and amorphous domains decompose rapidly, thereby improving the crystallinity of the GaN films. Photoluminescence spectra also indicate the presence of fewer defects when the annealing flow rate of NH3 is 500 sccm. The excellent crystal structure of the GaN films grown under optimized conditions was revealed by transmission electron microscopy analysis. More importantly, the crystal structure and orientation of GaN grown on SiO2 are the same as that of GaN grown on conventional sapphire substrate when a buffer layer is used. This work can aid in the development of transferable devices using GaN films.

  6. Photocatalysis in the visible range of sub-stoichiometric anatase films prepared by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Justicia, I. [ICMAB/CSIC, Campus UAB, 08193 Bellaterra (Spain); Garcia, G. [ICMAB/CSIC, Campus UAB, 08193 Bellaterra (Spain)]. E-mail: gemma@icmab.es; Battiston, G.A. [ICIS/CNR, Corso Stati Uniti 4, 35127 Padova (Italy); Gerbasi, R. [ICIS/CNR, Corso Stati Uniti 4, 35127 Padova (Italy); Ager, F. [CNA/CSIC Parque Tecnologico Cartuja 93, Avda Thomas A, Edison, 41092 Sevilla (Spain); Guerra, M. [IIQAB/CSIC Jordi Girona, 18 08034 Barcelona (Spain); Caixach, J. [IIQAB/CSIC Jordi Girona, 18 08034 Barcelona (Spain); Pardo, J.A. [ICMAB/CSIC, Campus UAB, 08193 Bellaterra (Spain); Rivera, J. [IIQAB/CSIC Jordi Girona, 18 08034 Barcelona (Spain); Figueras, A. [ICMAB/CSIC, Campus UAB, 08193 Bellaterra (Spain); Instituto de Fisica, UNAM, Campus UNAM Juriquilla, 76230 Queretaro (Mexico)

    2005-08-25

    Anatase phase of titanium oxide is the most promising photocatalyst material for organic pollutant degradation. However, due to its large band gap energy (3.2 eV) it is not viable to use sunlight as an energy source for the photocatalysis activation, and so, ultraviolet (UV) radiation below the wavelength of 380 nm is required. This paper focuses on the experimental demonstration of the reduction of this large band gap energy by inducing defects in the anatase structure under the form of oxygen sub-stoichiometry. TiO{sub 2} thin films were prepared in a metal organic chemical vapour deposition (MOCVD) reactor. The samples stoichiometry was measured by the Rutherford backscattering spectrometry (RBS) technique. Optical characterisation was also performed and the photodegradation activity in the visible range was tested using nonylphenol, which is one of the most harmful pollutants present in waste waters.

  7. YBa2Cu3O7 films prepared by aerosol MOCVD

    International Nuclear Information System (INIS)

    Weiss, F.; Froehlich, K.; Haase, R.; Labeau, M.; Selbmann, D.; Senateur, J.P.; Thomas, O.

    1993-01-01

    In the present study we report on properties of YBa 2 Cu 3 O 7 films prepared by aerosol MOCVD. We give a short description of the process and we focus on the superconducting and related properties of the films deposited on SrTiO 3 , LaAlO 3 and NdGaO 3 single crystalline substrates. (orig.)

  8. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    International Nuclear Information System (INIS)

    Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R.M.

    2015-01-01

    Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence

  9. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Aronne, Antonio [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Bloisi, Francesco, E-mail: bloisi@na.infn.it [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy); Calabria, Raffaela; Califano, Valeria [Istituto Motori – CNR, Naples (Italy); Depero, Laura E. [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Fanelli, Esther [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Federici, Stefania [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Massoli, Patrizio [Istituto Motori – CNR, Naples (Italy); Vicari, Luciano R.M. [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy)

    2015-05-01

    Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

  10. Chemical vapor deposition: A technique for applying protective coatings

    Energy Technology Data Exchange (ETDEWEB)

    Wallace, T.C. Sr.; Bowman, M.G.

    1979-01-01

    Chemical vapor deposition is discussed as a technique for applying coatings for materials protection in energy systems. The fundamentals of the process are emphasized in order to establish a basis for understanding the relative advantages and limitations of the technique. Several examples of the successful application of CVD coating are described. 31 refs., and 18 figs.

  11. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    Science.gov (United States)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  12. InGaN quantum well epilayers morphological evolution under a wide range of MOCVD growth parameter sets

    Energy Technology Data Exchange (ETDEWEB)

    Florescu, D.I.; Ting, S.M.; Merai, V.N.; Parekh, A.; Lee, D.S.; Armour, E.A.; Quinn, W.E. [Veeco TurboDisc Operations, 394 Elizabeth Avenue, Somerset, NJ 08873 (United States)

    2006-06-15

    This study exemplifies the use of TappingMode trademark atomic force microscopy (AFM) surface morphology imaging to investigate and optimise the metalorganic chemical vapour deposition (MOCVD) growth conditions and post-growth stability of thin (<40 Aa) InGaN layers with direct implications to the structural and optical properties of blue (460 nm) and green (520 nm) LEDs. InGaN epilayers less than 40 Aa thick of {proportional_to}20% solid phase indium were produced on thick (3-4 {mu}m) 2{sup ''} GaN templates grown on (0001) c-plane sapphire substrates. The morphological evolution of the InGaN material was studied utilising a DI3100 AFM tool. Surface morphology and its correlation with photoluminescence and X-ray diffraction results are discussed for every set of conditions employed. More specifically, the post-growth ambient exposure and thermal stability of the uncapped InGaN epilayers were investigated. In addition, the initial stage of subsequent GaN growth, which is an essential step towards the manufacture of LED active regions, was examined. Based on the above findings, a flexible MOCVD growth parameter space and improved LED constituent layer sequencing techniques have been established leading to more efficient and stable LED devices. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. InGaN quantum well epilayers morphological evolution under a wide range of MOCVD growth parameter sets

    International Nuclear Information System (INIS)

    Florescu, D.I.; Ting, S.M.; Merai, V.N.; Parekh, A.; Lee, D.S.; Armour, E.A.; Quinn, W.E.

    2006-01-01

    This study exemplifies the use of TappingMode trademark atomic force microscopy (AFM) surface morphology imaging to investigate and optimise the metalorganic chemical vapour deposition (MOCVD) growth conditions and post-growth stability of thin ( '' GaN templates grown on (0001) c-plane sapphire substrates. The morphological evolution of the InGaN material was studied utilising a DI3100 AFM tool. Surface morphology and its correlation with photoluminescence and X-ray diffraction results are discussed for every set of conditions employed. More specifically, the post-growth ambient exposure and thermal stability of the uncapped InGaN epilayers were investigated. In addition, the initial stage of subsequent GaN growth, which is an essential step towards the manufacture of LED active regions, was examined. Based on the above findings, a flexible MOCVD growth parameter space and improved LED constituent layer sequencing techniques have been established leading to more efficient and stable LED devices. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Suppression of Mg propagation into subsequent layers grown by MOCVD

    Science.gov (United States)

    Agarwal, Anchal; Tahhan, Maher; Mates, Tom; Keller, Stacia; Mishra, Umesh

    2017-01-01

    Low temperature (LT) flow modulation epitaxy (FME) or "pulsed" growth was successfully used to prevent magnesium from Metalorganic Chemical Vapor Deposition (MOCVD) grown p-GaN:Mg layers riding into subsequently deposited n-type layers. Mg concentration in the subsequent layers was lowered from ˜1 × 1018 cm-3 for a medium temperature growth at 950 °C to ˜1 × 1016 cm-3 for a low temperature growth at 700 °C via FME. The slope of the Mg concentration drop in the 700 °C FME sample was 20 nm/dec—the lowest ever demonstrated by MOCVD. For growth on Mg implanted GaN layers, the drop for a medium temperature regrowth at 950 °C was ˜10 nm/dec compared to >120 nm/dec for a high temperature regrowth at 1150 °C. This drop-rate obtained at 950 °C or lower was maintained even when the growth temperature in the following layers was raised to 1150 °C. A controlled silicon doping series using LT FME was also demonstrated with the lowest and highest achieved doping levels being 5 × 1016 cm-3 and 6 × 1019 cm-3, respectively.

  15. An RBS study of thin PLD and MOCVD strontium copper oxide layers

    Energy Technology Data Exchange (ETDEWEB)

    Kantor, Z. [Institute of Physics, University of Pannonia, H-8200 Veszprem (Hungary); Papadopoulou, E.L.; Aperathitis, E. [Inst. Electronic Struture and Laser, Foundation for Research and Technology - Hellas, P.O. Box 1527, Heraklion 71110 (Greece); Deschanvres, J.-L. [LMPG INP Grenoble-Minatec, BP 257, 38016 Grenoble Cedex 1 (France); Somogyi, K. [MicroVacuum Ltd., Kerekgyarto u.: 10, H-1147 Budapest (Hungary)], E-mail: karoly.somogyi@microvacuum.com; Szendro, I. [MicroVacuum Ltd., Kerekgyarto u.: 10, H-1147 Budapest (Hungary)

    2008-09-30

    Strontium copper oxide (SCO) has been studied as p-type transparent (VIS) conductive oxide material. Also theoretical studies suggested p-type conductivity of the SrCu{sub 2}O{sub 2} composition. SCO thin layers, with thicknesses of 30-2000 nm, were deposited on glass and silicon substrates both by pulsed laser deposition (PLD) and by MOCVD method. The as-grown layers showed high electrical resistance. Due to an annealing process, the resistivity significantly decreased and the layers showed p-type conductivity. Optical transparency measured on samples grown on glass substrates was found about or above 80%, including also thickness dependence. RBS measurements were applied for the determination of the chemical composition profile of the layers. A comparison revealed some specific differences between as-grown and annealed PLD samples. Due to the annealing, the ratio of oxide phases was changed and a vertical inhomogeneity in chemical composition was observed. Our measurements revealed also the influence of the deposition technique and of the substrate.

  16. Obtention of thin depositions by the vacuum evaporation technique

    International Nuclear Information System (INIS)

    Gonzalez Mateu, D.; Labrada, A.; Voronin, A.

    1991-01-01

    The vacuum evaporating technique used to prepare thin depositions, and the technical characteristics of the constructed installation are described. 235 U y 238 U nuclear target for the fission researches were obtained. Aluminium and gold self-supporting foils were obtained too

  17. Fabrication of InP-pentacene inorganic-organic hybrid heterojunction using MOCVD grown InP for photodetector application

    Science.gov (United States)

    Sarkar, Kalyan Jyoti; Pal, B.; Banerji, P.

    2018-04-01

    We fabricated inorganic-organic hybrid heterojunction between indium phosphide (InP) and pentacene for photodetector application. InP layer was grown on n-Si substrate by atmospheric pressure metal organic chemical vapour deposition (MOCVD) technique. Morphological properties of InP and pentacene thin film were characterized by atomic force microscopy (AFM). Current-voltage characteristics were investigated in dark and under illumination condition at room temperature. During illumination, different wavelengths of visible and infrared light source were employed to perform the electrical measurement. Enhancement of photocurrent was observed with decreasing in wavelength of incident photo radiation. Ideality factor was found to be 1.92. High rectification ratio of 225 was found at ± 3 V in presence of infrared light source. This study provides new insights of inorganic-organic hybrid heterojunction for broadband photoresponse in visible to near infrared (IR) region under low reverse bias condition.

  18. Thermionic vacuum arc (TVA) technique for magnesium thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Balbag, M.Z., E-mail: zbalbag@ogu.edu.t [Eskisehir Osmangazi University, Education Faculty, Primary Education, Meselik Campus, Eskisehir 26480 (Turkey); Pat, S.; Ozkan, M.; Ekem, N. [Eskisehir Osmangazi University, Art and Science Faculty, Physics Department, Eskisehir 26480 (Turkey); Musa, G. [Ovidius University, Physics Department, Constanta (Romania)

    2010-08-15

    In this study, magnesium thin films were deposited on glass substrate by the Thermionic Vacuum Arc (TVA) technique for the first time. We present a different technique for deposition of high-quality magnesium thin films. By means of this technique, the production of films is achieved by condensing the plasma of anode material generated using Thermionic Vacuum Arc (TVA) under high vacuum conditions onto the surface to be coated. The crystal orientation and morphology of the deposited films were investigated by using XRD, EDX, SEM and AFM. The aim of this study is to search the use of TVA technique to coat magnesium thin films and to determine some of the physical properties of the films generated. Furthermore, this study will contribute to the scientific studies which search the thin films of magnesium or the compounds containing magnesium. In future, this study will be preliminary work to entirely produce magnesium diboride (MgB{sub 2}) superconductor thin film with the TVA technique.

  19. Development of high-temperature superconducting coated conductor by MOCVD method

    International Nuclear Information System (INIS)

    Kim, Chan Joong; Jun, Byung Hyuk; Jung, Choung Hwan

    2004-07-01

    To fabricate the second generation superconductor wire, coated conductor, we selected MOCVD (Metal organic chemical vapor deposition) method which is commercially available and whose growth rate is very high. The first buffer layer CeO 2 was successfully deposited on the Ni tape. The thick Y-stabilized ZrO 2 layer was thus inserted between two CeO 2 layers by MOCVD method. The c-axis growth of the first CeO 2 , the inserted YSZ and top CeO 2 layer was achieved by optimized the deposition condition for the three buffers. It was found that the YBCO deposition was fairly dependant on the depostion temperature, time, oxygen partial pressure, amount of the source supplied. Especially the thickness of the YBCO films was linearly dedendant on the deposition temperature and time, but current properties was not linearly dependant on the film thickness. The critical current (Ic) of the YBCO film grown on SrTiO 3 and IBAD template were over 100 A/cm-width and 50 A/cm-width at 77 K and 0 field. To establish the MOCVD process, collaboration work with several organizations was made

  20. Thermoelectric properties of ZnSb films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Venkatasubramanian, R; Watko, E; Colpitts, T

    1997-07-01

    The thermoelectric properties of ZnSb films grown by metallorganic chemical vapor deposition (MOCVD) are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the thicker ZnSb films offer improved carrier mobilities and lower free-carrier concentration levels. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 C. The thicker films, due to the lower doping levels, indicate higher Seebeck coefficients between 25 to 200 C. A short annealing of the ZnSb film at temperatures of {approximately}200 C results in reduced free-carrier level. Thermal conductivity measurements of ZnSb films using the 3-{omega} method are also presented.

  1. Fabrication of SERS Substrate by Multilayered Nanosphere Deposition Technique

    International Nuclear Information System (INIS)

    Fu, Chit Yaw; Dinish, U. S.; Praveen, Thoniyot; Koh, Zhen Yu; Kho, Khiang Wei; Malini, Olivo

    2010-01-01

    Metal film over nanosphere (MFON) has been employed as a reproducible and predictable SERS-active device in biosensing applications. In addition to its economic fabrication process, such substrate can be further processed to a prism-structure with increased SERS enhancement and wider Plasmon tunability. In this work, we investigate an alternative coating method to deposit a larger area of well-ordered PS beads with different sizes (oe = 100nm and 400 nm) onto a glass. The result suggests that the proposed well-coating technique can be suitably used to form closely-packed PS beads with diameter less than 100 nm for developing MFON substrates.

  2. Geochemical Exploration Techniques Applicable in the Search for Copper Deposits

    Science.gov (United States)

    Chaffee, Maurice A.

    1975-01-01

    Geochemical exploration is an important part of copper-resource evaluation. A large number of geochemical exploration techniques, both proved and untried, are available to the geochemist to use in the search for new copper deposits. Analyses of whole-rock samples have been used in both regional and local geochemical exploration surveys in the search for copper. Analyses of mineral separates, such as biotite, magnetite, and sulfides, have also been used. Analyses of soil samples are widely used in geochemical exploration, especially for localized surveys. It is important to distinguish between residual and transported soil types. Orientation studies should always be conducted prior to a geochemical investigation in a given area in order to determine the best soil horizon and the best size of soil material for sampling in that area. Silty frost boils, caliche, and desert varnish are specialized types of soil samples that might be useful sampling media. Soil gas is a new and potentially valuable geochemical sampling medium, especially in exploring for buried mineral deposits in arid regions. Gaseous products in samples of soil may be related to base-metal deposits and include mercury vapor, sulfur dioxide, hydrogen sulfide, carbon oxysulfide, carbon dioxide, hydrogen, oxygen, nitrogen, the noble gases, the halogens, and many hydrocarbon compounds. Transported materials that have been used in geochemical sampling programs include glacial float boulders, glacial till, esker gravels, stream sediments, stream-sediment concentrates, and lake sediments. Stream-sediment sampling is probably the most widely used and most successful geochemical exploration technique. Hydrogeochemical exploration programs have utilized hot- and cold-spring waters and their precipitates as well as waters from lakes, streams, and wells. Organic gel found in lakes and at stream mouths is an unproved sampling medium. Suspended material and dissolved gases in any type of water may also be useful

  3. Stoichiometry, thickness and crystallinity of MOCVD grown Hg{sub 1x-y}Cd{sub x}Mn{sub y}Te determined by nuclear techniques of analysis

    Energy Technology Data Exchange (ETDEWEB)

    Studd, W B; Johnston, P N; Bubb, I F [Royal Melbourne Inst. of Tech., VIC (Australia); Leech, P W [Applied Research and Developement, Telecom Australia, Clayton, VIC (Australia)

    1994-12-31

    The quaternary semi-conductor Hg{sub 1-x-y}Cd{sub x}Mn{sub y}Te has been grown by Metal Organic Chemical Vapour Deposition using the Interdiffused Multi-layer Process. The layers have been analysed by Ion beam (PIXE, RBS, channeling) and related analytical techniques (EDXRF, XRD, RHEED) to obtain stoichiometric and structural information. The analysis shows that all four elements are present throughout the layer and that the elemental concentrations and thickness of the layer vary considerably over the film. Channeling, XRD and RHEED have been combined to show that the layer is polycrystalline. 14 refs., 3 figs.

  4. Stoichiometry, thickness and crystallinity of MOCVD grown Hg{sub 1x-y}Cd{sub x}Mn{sub y}Te determined by nuclear techniques of analysis

    Energy Technology Data Exchange (ETDEWEB)

    Studd, W.B.; Johnston, P.N.; Bubb, I.F. [Royal Melbourne Inst. of Tech., VIC (Australia); Leech, P.W. [Applied Research and Developement, Telecom Australia, Clayton, VIC (Australia)

    1993-12-31

    The quaternary semi-conductor Hg{sub 1-x-y}Cd{sub x}Mn{sub y}Te has been grown by Metal Organic Chemical Vapour Deposition using the Interdiffused Multi-layer Process. The layers have been analysed by Ion beam (PIXE, RBS, channeling) and related analytical techniques (EDXRF, XRD, RHEED) to obtain stoichiometric and structural information. The analysis shows that all four elements are present throughout the layer and that the elemental concentrations and thickness of the layer vary considerably over the film. Channeling, XRD and RHEED have been combined to show that the layer is polycrystalline. 14 refs., 3 figs.

  5. MOCVD of zirconium oxide from the zirconium guanidinate complex |ZrCp′{2-(iPrN)2CNMe2}2Cl

    NARCIS (Netherlands)

    Blackman, C.S.; Carmalt, C.J.; Moniz, S.J.A.; Potts, S.E.; Davies, H.O.; Pugh, D.C.

    2009-01-01

    Parallel to successful studies into use of [ZrCp'{¿ 2-(iPrN)2CNMe2} 2Cl] as a precursor to the deposition of zirconium carbonitride via CVD the same precursor was utilised for the MOCVD of thin films of ZrO 2 using borosilicate glass substrates. The deposited films were of mixed phase; films

  6. Carbon analysis in MOCVD grown HgCdMnTe by charged particle activation

    International Nuclear Information System (INIS)

    Stannard, W.B.; Walker, S.R.; Johnston, P.N.; Bubb, I.F.

    1994-01-01

    Charged Particle Activation Analysis (CPAA) has been used for the determination of the concentration of carbon in HgCdMnTe grown by Metal Organic Chemical Vapour Deposition (MOCVD). The samples were irradiated with a beam of 3.0 MeV 3 He ions. 11 C is produced by the reaction 12 C( 3 He, α) 11 C and is a positron (β + ) emitting radionuclide with a half-life of 20.38 min. At the same time the reaction 16 O( 3 He, p) 18 F produces 18 F which is also a β + emitter and has a half-life of 109.72 min. A post-irradiation etching technique has been developed to enable removal of surface contaminants. The radioactivity is determined by a β + spectrometer consisting of two NaI γ-ray detectors (3x3 in.) oriented at 180 . The two coincident 511 keV γ-rays emitted at 180 during the positron annihilation are detected. The initial 11 C and 18 F activities, and hence the oxygen and carbon contributions, can be separated by analysis of the count rate versus time. Analysis shows significant carbon levels in the HgCdMnTe samples. ((orig.))

  7. Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

    Science.gov (United States)

    Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

    2017-02-01

    In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

  8. Epitaxial growth and processing of InP films in a ``novel`` remote plasma-MOCVD apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Bruno, G. [Bari Univ. (Italy). Centro di Studio per la Chimica; Losurdo, M. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capezzuto, P. [Bari Univ. (Italy). Centro di Studio per la Chimica; Capozzi, V. [Bari Univ. (Italy). Ist. di Fisica; Lorusso, F.G. [Bari Univ. (Italy). Ist. di Fisica; Minafra, A. [Bari Univ. (Italy). Ist. di Fisica

    1996-06-01

    A new remote plasma MOCVD apparatus for the treatment and deposition of III-V materials and, specifically, of indium phosphide, has been developed. The plasma source is used to produce hydrogen atoms and to predissociate phosphine for, respectively, the reduction of native oxide on InP substrate surface and the InP deposition. In situ diagnostics by optical emission spectroscopy, mass spectrometry, and spectroscopic ellipsometry are used to fingerprint the gas phase and the growth surface. The plasma cleaning process effectively reduce the InP oxide layer without surface damage. Indium phosphide epilayers deposited from trimethylindium and plasma activated PH{sub 3} show singular photoluminescence spectra with signal intensity higher than that of the best InP film deposited under conventional MOCVD condition (without PH{sub 3} plasma preactivation). (orig.)

  9. Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD

    Directory of Open Access Journals (Sweden)

    Long Giang Bach

    2016-01-01

    Full Text Available We have explored the effective approach to fabricate GZO/ZnO films that can make the pyramidal surface structures of GZO films for effective light scattering by employing a low temperature ZnO buffer layer prior to high temperature GZO film growth. The GZO thin films exhibit the typical preferred growth orientations along the (002 crystallographic direction at deposition temperature of 400°C and SEM showed that column-like granule structure with planar surface was formed. In contrast, GZO films with a pyramidal texture surface were successfully developed by the control of (110 preferred orientation. We found that the light diffuse transmittance of the film with a GZO (800 nm/ZnO (766 nm exhibited 13% increase at 420 nm wavelength due to the formed large grain size of the pyramidal texture surface. Thus, the obtained GZO films deposited over ZnO buffer layer have high potential for use as front TCO layers in Si-based thin film solar cells. These results could develop the potential way to fabricate TCO based ZnO thin film using MOCVD or sputtering techniques by depositing a low temperature ZnO layer to serve as a template for high temperature GZO film growth. The GZO films exhibited satisfactory optoelectric properties.

  10. Preparation of molybdenum oxide thin films by MOCVD

    International Nuclear Information System (INIS)

    Guerrero, R. Martinez; Garcia, J.R. Vargas; Santes, V.; Gomez, E.

    2007-01-01

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 o C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 o C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of α-MoO 3 phase at deposition temperatures ranging from 400 to 560 o C (673-833 K). Crystalline α-MoO 3 films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 o C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance

  11. Preparation of molybdenum oxide thin films by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Guerrero, R. Martinez [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico); Garcia, J.R. Vargas [Depto. de Ingenieria Metalurgica, ESIQIE-IPN, Mexico 07300, D.F. (Mexico)]. E-mail: rvargasga@ipn.mx; Santes, V. [CIIEMAD-IPN, Miguel Othon de Mendizabal 485, Mexico 07700, D.F. (Mexico); Gomez, E. [Instituto de Quimica-UNAM, Circuito Exterior-Ciudad Universitaria, Mexico 04510, D.F. (Mexico)

    2007-05-31

    In this study, molybdenum oxide films were prepared in a horizontal hot-wall MOCVD apparatus using molybdenum dioxide acetylacetonate as precursor. The molybdenum precursor was synthesized from acetylacetone and molybdenum oxide powder. Thermal gravimetric (TG) and differential thermal analyses (DTA) of the precursor suggested the formation of molybdenum oxides around 430 {sup o}C (703 K). Thus, a range of deposition temperatures varying from 350 to 630 {sup o}C (623-903 K) was explored to investigate the effects on the nature of the molybdenum oxide films. X-ray diffraction (XRD) results showed that the films consisted of {alpha}-MoO{sub 3} phase at deposition temperatures ranging from 400 to 560 {sup o}C (673-833 K). Crystalline {alpha}-MoO{sub 3} films can be obtained from molybdenum dioxide acetylacetonate precursor, without need of a post-annealing treatment. The best crystalline quality was found in films having needle-like crystallites grown at deposition temperature of about 560 {sup o}C (833 K), which exhibit a strong (0 1 0) preferred orientation and a transparent visual appearance.

  12. Nucleation and growth of copper oxide films in MOCVD processes using the β-ketoiminate precursor 4,4'-(1,2-ethanediyldinitrilo)bis(2-pentanonate) copper(II)

    International Nuclear Information System (INIS)

    Condorelli, G.G.; Malandrino, G.; Fragala, I.L.

    1999-01-01

    The MOCVD of CuO has attracted much attention because of its application in high-T c superconducting films and gas sensors. This work focuses on the potential of a β-ketoiminate copper complex as an alternative MOCVD source to β-diketonate complexes. Particular attention has been given to factors such as texturing, roughness, and grain size of the deposit. (orig.)

  13. Transparent conductive Ga-doped ZnO films fabricated by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Behrends, Arne; Wagner, Alexander; Al-Suleiman, Mohamed Aid Mansur; Waag, Andreas; Bakin, Andrey [Institute of Semiconductor Technology, University of Technology Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany); Lugauer, Hans-Juergen; Strassburg, Martin; Walter, Robert; Weimar, Andreas [OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055 Regensburg (Germany)

    2012-04-15

    Transparent conductive oxides (TCOs) are used for a variety of different applications, e.g., in solar cells and light emitting diodes (LEDs). Mostly, sputtering is used, which often results in a degradation of the underlying semiconductor material. In this work we report on a ''soft'' method for the fabrication of ZnO films as TCO layers by using metal organic chemical vapor deposition (MOCVD) at particularly low temperatures. The MOCVD approach has been studied focusing on the TCO key issues: fabrication temperature, morphology, optical, and electrical properties. Very smooth ZnO films with rms values down to 0.8 nm were fabricated at a substrate temperature of only 300 C. Ga-doping is well controllable even for high carrier concentrations up to 2 x 10{sup 20} cm{sup -3}, which is above the Mott-density leading to metallic-like behavior of the films. Furthermore all films show excellent optical transparency in the visible spectral range. As a consequence, our MOCVD approach is well suited for the soft fabrication of ZnO-based TCO layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Reduced thermal budget processing of Y--Ba--Cu--O high temperature superconducting thin films by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Singh, R.; Sinha, S.; Hsu, N.J.; Ng, J.T.C.; Chou, P.; Thakur, R.P.S.; Narayan, J.

    1991-01-01

    Metalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a viable technique to fabricate ribbons, tapes, coated wires, and the deposition of films of high temperature superconductors, and related materials. As a reduced thermal budget processing technique, rapid isothermal processing (RIP) based on incoherent radiation as the source of energy can be usefully coupled to conventional MOCVD. In this paper we report on the deposition and characterization of high quality superconducting thin films of Y--Ba--Cu--O (YBCO) on MgO and SrTiO 3 substrates by RIP assisted MOCVD. By using a mixture of N 2 O and O 2 as the oxygen source films deposited initially at 600 degree C for 1 min and then at 740 degree C for 30 min are primarily c-axis oriented and with zero resistance being observed at 84 and 89 K for MgO and SrTiO 3 substrates, respectively. The zero magnetic field current densities at 77 K for MgO and SrTiO 3 substrates are 1.2x10 6 and 1.5x10 6 A/cm 2 , respectively. It is envisaged that high energy photons from the incoherent light source and the use of a mixture of N 2 O and O 2 as the oxygen source, assist chemical reactions and lower overall thermal budget for processing of these films

  15. TiO2 thin film growth using the MOCVD method

    Directory of Open Access Journals (Sweden)

    Bernardi M.I.B.

    2001-01-01

    Full Text Available Titanium oxide (TiO2 thin films were obtained using the MOCVD method. In this report we discuss the properties of a film, produced using a ordinary deposition apparatus, as a function of the deposition time, with constant deposition temperature (90 °C, oxygen flow (7,0 L/min and substrate temperature (400 °C. The films were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy (AFM and visible and ultra-violet region spectroscopy (UV-Vis. The films deposited on Si (100 substrates showed the anatase polycrystalline phase, while the films grown on glass substrates showed no crystallinity. Film thickness increased with deposition time as expected, while the transmittance varied from 72 to 91% and the refractive index remained close to 2.6.

  16. Effects of Cd{sub 1-x}Zn{sub x}S alloy composition and post-deposition air anneal on ultra-thin CdTe solar cells produced by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Clayton, A.J., E-mail: Andrew.J.Clayton@Swansea.ac.uk [Centre for Solar Energy Research, College of Engineering, Swansea University, OpTIC, St. Asaph, LL17 0JD (United Kingdom); Baker, M.A.; Babar, S.; Grilli, R. [The Surface Analysis Laboratory, Department of Mechanical Engineering Sciences, University of Surrey, Guildford, GU2 7XH (United Kingdom); Gibson, P.N. [Institute for Health and Consumer Protection, Joint Research Centre of the European Commission, 21027, Ispra, VA (Italy); Kartopu, G.; Lamb, D.A. [Centre for Solar Energy Research, College of Engineering, Swansea University, OpTIC, St. Asaph, LL17 0JD (United Kingdom); Barrioz, V. [Engineering and Environment, Department of Physics and Electrical Engineering, Northumbria University, Newcastle, NE1 8ST (United Kingdom); Irvine, S.J.C. [Centre for Solar Energy Research, College of Engineering, Swansea University, OpTIC, St. Asaph, LL17 0JD (United Kingdom)

    2017-05-01

    Ultra-thin CdTe:As/Cd{sub 1-x}Zn{sub x}S photovoltaic solar cells with an absorber thickness of 0.5 μm were deposited by metal-organic chemical vapour deposition on indium tin oxide coated boro-aluminosilicate substrates. The Zn precursor concentration was varied to compensate for Zn leaching effects after CdCl{sub 2} activation treatment. Analysis of the solar cell composition and structure by X-ray photoelectron spectroscopy depth profiling and X-ray diffraction showed that higher concentrations of Zn in the Cd{sub 1-x}Zn{sub x}S window layer resulted in suppression of S diffusion across the CdTe/Cd{sub 1-x}Zn{sub x}S interface after CdCl{sub 2} activation treatment. Excessive Zn content in the Cd{sub 1-x}Zn{sub x}S alloy preserved the spectral response in the blue region of the solar spectrum, but increased series resistance for the solar cells. A modest increase in the Zn content of the Cd{sub 1-x}Zn{sub x}S alloy together with a post-deposition air anneal resulted in an improved blue response and an enhanced open circuit voltage and fill factor. This device yielded a mean efficiency of 8.3% over 8 cells (0.25 cm{sup 2} cell area) and best cell efficiency of 8.8%. - Highlights: • CdCl{sub 2} anneal treatment resulted in S diffusing to the back contact. • High Zn levels created mixed cubic/hexagonal structure at the p-n junction. • Increased Zn in Cd{sub 1-x}Zn{sub x}S supressed S diffusion into CdTe. • Device V{sub oc} was enhanced overall with an additional back surface air anneal.

  17. MOCVD growth of transparent conducting Cd2SnO4 thin films

    International Nuclear Information System (INIS)

    Metz, A.W.; Poeppelmeier, K.R.; Marks, T.J.; Lane, M.A.; Kannewurt, C.R.

    2004-01-01

    The first preparation of transparent conducting Cd 2 SnO 4 thin films by a simple MOCVD process is described. As-deposited films using Cd(hfa) 2 (TMEDA) (Figure), at 365 C are found to be highly crystalline with a relatively wide range of grain size of 100-300 nm. XRD indicates a cubic spinel Cd 2 SnO 4 crystal structure and the possible presence of a small amount of CdO. The films exhibit conductivities of 2170 S/cm and a bandgap of 3.3 eV, rivaling those of commercial tin-doped indium oxide. (Abstract Copyright [2004], Wiley Periodicals, Inc.)

  18. Photodegradative properties of TiO{sub 2} films prepared by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Justicia, I.; Ayllon, J.A.; Figueras, A. [Consejo Superior de Investigaciones Cientificas, Barcelona (Spain). Inst. de Ciencia de Materiales; Battiston, G.A.; Gerbasi, R. [Consejo Superior de Investigaciones Cientificas, Barcelona (Spain). Inst. de Ciencia de Materiales; Ist. di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati del CNR, Padova (Italy)

    2001-08-01

    TiO{sub 2} is a well-known photocatalyst for the air-oxydation of organic compounds. This paper deals with the preparation of TiO{sub 2} layers by MOCVD. The photodegradation rate has been studied in the presence of aqueous suspensions (methylene blue) as a function of the film thickness, roughness and crystallite preferred orientation. These results are compared with aqueous suspensions of Degussa P-25 powders. Deposits obtained on fused quartz showed a higher photodegradation rate than those prepared on glass, while Degussa powders exhibited an intermediate value. (orig.)

  19. Surface Science in an MOCVD Environment: Arsenic on Vicinal Ge(100)

    International Nuclear Information System (INIS)

    Olson, J.M.; McMahon, W.E.

    1998-01-01

    Scanning tunneling microscope (STM) images of arsine-exposed vicinal Ge(100) surfaces show that most As/Ge steps are reconstructed, and that a variety of different step structures exist. The entire family of reconstructed As/Ge steps can be divided into two types, which we have chosen to call ''single-row'' steps and ''double-row'' steps. In this paper we propose a model for a double-row step created by annealing a vicinal Ge(100) substrate under an arsine flux in a metal-organic chemical vapor deposition (MOCVD) chamber

  20. ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

    Energy Technology Data Exchange (ETDEWEB)

    Purandare, Yashodhan, E-mail: Y.Purandare@shu.ac.uk; Ehiasarian, Arutiun; Hovsepian, Papken [Nanotechnology Centre for PVD Research, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Santana, Antonio [Ionbond AG Olten, Industriestrasse 211, CH-4600 Olten (Switzerland)

    2014-05-15

    Zirconium nitride (ZrN) coatings were deposited on 1 μm finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5 μm with hardness in the range of 30–40 GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

  1. Plasmas for the low-temperature growth of high-quality GaN films by molecular beam epitaxy and remote plasma MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M.; Capezzuto, P.; Bruno, G. [Plasmachemistry Research Center, CNR, Bari (Italy); Namkoong, G.; Doolittle, W.A.; Brown, A.S. [Georgia Inst. of Tech., Atlanta (United States). School of Electrical and Computer Engineering, Microelectronic Research Center

    2002-03-16

    GaN heteroepitaxial growth on sapphire (0001) substrates was carried out by both radio-frequency (rf) remote plasma metalorganic chemical vapor deposition (RP-MOCVD) and molecular beam epitaxy (MBE). A multistep growth process including substrate plasma cleaning and nitridation, buffer growth, its subsequent annealing and epilayer growth was used. In order to achieve a better understanding of the GaN growth, in-situ real time investigation of the surface chemistry is performed for all the steps using the conventional reflection high-energy electron spectroscopy (RHEED) during the MBE process, while laser reflectance interferometry (LRI) and spectroscopic ellipsometry (SE), which do not require UHV conditions, are used for the monitoring of the RP-MOCVD process. The chemistry of the rf N{sub 2} plasma sapphire nitridation and its effect on the epilayer growth and quality are discussed in both MBE and RP-MOCVD. (orig.)

  2. Thermoelectric properties of ZnSb films grown by MOCVD

    International Nuclear Information System (INIS)

    Venkatasubramanian, R.; Watko, E.; Colpitts, T.

    1997-04-01

    The thermoelectric properties of metallorganic chemical vapor deposited (MOCVD) ZnSb films are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the growth of thicker ZnSb films lead to improved carrier mobilities and lower free-carrier concentrations. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 to 170 C, with peak Seebeck coefficients as high as 470 microV/K at 220 C. The various growth conditions, including the use of intentional dopants, to improve the Seebeck coefficients at room temperature and above, are discussed. A short annealing of the ZnSb films at temperatures of ∼ 200 C resulted in reduced free-carrier levels and higher Seebeck coefficients at 300 K. Finally, ZT values based on preliminary thermal conductivity measurements using the 3-ω method are reported

  3. Thermogravimetric evaluation of the suitability of precursors for MOCVD

    International Nuclear Information System (INIS)

    Kunte, G V; Shivashankar, S A; Umarji, A M

    2008-01-01

    A method based on the Langmuir equation for the estimation of vapour pressure and enthalpy of sublimation of subliming compounds is described. The variable temperature thermogravimetric/differential thermogravimetric (TG/DTG) curve of benzoic acid is used to arrive at the instrument parameters. Employing these parameters, the vapour pressure–temperature curves are derived for salicylic acid and camphor from their TG/DTG curves. The values match well with vapour pressure data in the literature, obtained by effusion methods. By employing the Clausius–Clapeyron equation, the enthalpy of sublimation could be calculated. Extending the method further, two precursors for metal-organic chemical vapour deposition (MOCVD) of titanium oxide bis-isopropyl bis tert-butyl 2-oxobutanoato titanium, Ti(O i Pr) 2 (tbob) 2 , and bis-oxo-bis-tertbutyl 2-oxobutanoato titanium, [TiO(tbob) 2 ] 2 , have been evaluated. The complex Ti(O i Pr) 2 (tbob) 2 is found to be a more suitable precursor. This approach can be helpful in quickly screening for the suitability of a compound as a CVD precursor

  4. Metallization on FDM Parts Using the Chemical Deposition Technique

    Directory of Open Access Journals (Sweden)

    Azhar Equbal

    2014-08-01

    Full Text Available Metallization of ABS (acrylonitrile-butadiene-styrene parts has been studied on flat part surfaces. These parts are fabricated on an FDM (fused deposition modeling machine using the layer-wise deposition principle using ABS as a part material. Electroless copper deposition on ABS parts was performed using two different surface preparation processes, namely ABS parts prepared using chromic acid for etching and ABS parts prepared using a solution mixture of sulphuric acid and hydrogen peroxide (H2SO4/H2O2 for etching. After surface preparations using these routes, copper (Cu is deposited electrolessly using four different acidic baths. The acidic baths used are 5 wt% CuSO4 (copper sulfate with 15 wt% of individual acids, namely HF (hydrofluoric acid, H2SO4 (sulphuric acid, H3PO4 (phosphoric acid and CH3COOH (acetic acid. Cu deposition under different acidic baths used for both the routes is presented and compared based on their electrical performance, scanning electron microscopy (SEM and energy dispersive X-ray spectrometry (EDS. The result shows that chromic acid etched samples show better electrical performance and Cu deposition in comparison to samples etched via H2SO4/H2O2.

  5. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  6. On the deposition parameters of indium oxide (IO) and tin oxide (TO) by reactive evaporation technique

    International Nuclear Information System (INIS)

    Hassan, F.; Abdullah, A.H.; Salam, R.

    1990-01-01

    Thin films of tin oxide (TO) and indium oxide (IO) are prepared by the reactive evaporation technique, where indium or tin sources are evaporated and made to react with oxygen gas injected close to the substrate. In both depositions a substrate temperature of 380 0 C and a chamber pressure of 2x10 -5 mbar are utilized, but however different oxygen flow rates has been maintained. For TO, the deposition rate is found to be constant up to about 55 minutes of deposition time with a deposition rate of about 0.10 A/s, but for longer deposition time the deposition rate increases rapidly up to about 0.30 A/s. The IO displays a higher deposition rate of about 0.80 A/s over a deposition time 30 minutes, beyond which the deposition rate increases gradually

  7. Development and construction of a novel MOCVD facility for the growth of ferroelectric thin layers

    International Nuclear Information System (INIS)

    Schaefer, P.R.

    2002-02-01

    This thesis deals with the production of ferroelectric thin films using the MOCVD technology. The main focus is put on the design and construction of a complete MOCVD research system that is equipped with a novel non-contact vaporizer system. The precursors are nebulized in an ultrasonic atomizer and injected into a hot gas stream, so they can vaporize without getting into contact with a hot surface. Hence, one of the biggest disadvantages of conventional vaporizer concepts, the contamination of the vaporizing element with decomposing chemicals, could be avoided completely, resulting in a nearly maintenance-free system. In a direct comparison with the well-established Direct Liquid Injection Subsystem DLI-25C from MKS Instruments, the advantages of non-contact evaporation were clearly demonstrated. Additionally, the scope of this work included the development of standard deposition processes for the ternary oxides SrTiO 3 , BaTiO 3 und PbTiO 3 and growth studies were performed. Electrical measurements performed on MIM structures with Pt electrodes and SrTiO 3 as dielectric indicate a high film quality comparable with results presented in the literature. Furthermore, for the first time the solid solution (Pb x Ba 1-x )TiO 3 has been deposited by MOCVD. This material system is widely unknown in thin film form and it is well suited as a model system to investigate the influence of mechanical stresses on the film properties, because it represents a transition between the (as a thin film) superparaelectric barium titanate and the ferroelectric lead titanate. Through variation of the lead/barium ratio the tetragonal distortion of the lattice cell could be adjusted in a wide range. (orig.)

  8. Seasonal atmospheric deposition variations of polychlorinated biphenyls (PCBs) and comparison of some deposition sampling techniques.

    Science.gov (United States)

    Birgül, Askın; Tasdemir, Yücel

    2011-03-01

    Ambient air and bulk deposition samples were collected between June 2008 and June 2009. Eighty-three polychlorinated biphenyl (PCB) congeners were targeted in the samples. The average gas and particle PCB concentrations were found as 393 ± 278 and 70 ± 102 pg/m(3), respectively, and 85% of the atmospheric PCBs were in the gas phase. Bulk deposition samples were collected by using a sampler made of stainless steel. The average PCB bulk deposition flux value was determined as 6,020 ± 4,350 pg/m(2) day. The seasonal bulk deposition fluxes were not statistically different from each other, but the summer flux had higher values. Flux values differed depending on the precipitation levels. The average flux value in the rainy periods was 7,480 ± 4,080 pg/m(2) day while the average flux value in dry periods was 5,550 ± 4,420 pg/m(2) day. The obtained deposition values were lower than the reported values given for the urban and industrialized areas, yet close to the ones for the rural sites. The reported deposition values were also influenced by the type of the instruments used. The average dry deposition and total deposition velocity values calculated based on deposition and concentration values were found as 0.23 ± 0.21 and 0.13 ± 0.13 cm/s, respectively.

  9. Chemical solution deposition techniques for epitaxial growth of complex oxides

    NARCIS (Netherlands)

    ten Elshof, Johan E.; Koster, G.; Huijben, Mark; Rijnders, G.

    2015-01-01

    The chemical solution deposition (CSD) process is a wet-chemical process that is employed to fabricate a wide variety of amorphous and crystalline oxide thin films. This chapter describes the typical steps in a CSD process and their influence on the final microstructure and properties of films, and

  10. Effects of LP-MOCVD prepared TiO2 thin films on the in vitro behavior of gingival fibroblasts

    International Nuclear Information System (INIS)

    Cimpean, Anisoara; Popescu, Simona; Ciofrangeanu, Cristina M.; Gleizes, Alain N.

    2011-01-01

    We report on the in vitro response of human gingival fibroblasts (HGF-1 cell line) to various thin films of titanium dioxide (TiO 2 ) deposited on titanium (Ti) substrates by low pressure metal-organic chemical vapor deposition (LP-MOCVD). The aim was to study the influence of film structural parameters on the cell behavior comparatively with a native-oxide covered titanium specimen, this objective being topical and interesting for materials applications in implantology. HGF-1 cells were cultured on three LP-MOCVD prepared thin films of TiO 2 differentiated by their thickness, roughness, transversal morphology, allotropic composition and wettability, and on a native-oxide covered Ti substrate. Besides traditional tests of cell viability and morphology, the biocompatibility of these materials was evaluated by fibronectin immunostaining, assessment of cell proliferation status and the zymographic evaluation of gelatinolytic activities specific to matrix metalloproteinases secreted by cells grown in contact with studied specimens. The analyzed surfaces proved to influence fibronectin fibril assembly, cell proliferation and capacity to degrade extracellular matrix without considerably affecting cell viability and morphology. The MOCVD of TiO 2 proved effective in positively modifying titanium surface for medical applications. Surface properties playing a crucial role for cell behavior were the wettability and, secondarily, the roughness, HGF-1 cells preferring a moderately rough and wettable TiO 2 coating.

  11. Superhydrophobic polytetrafluoroethylene thin films with hierarchical roughness deposited using a single step vapor phase technique

    International Nuclear Information System (INIS)

    Gupta, Sushant; Arjunan, Arul Chakkaravarthi; Deshpande, Sameer; Seal, Sudipta; Singh, Deepika; Singh, Rajiv K.

    2009-01-01

    Superhydrophobic polytetrafluoroethylene films with hierarchical surface roughness were deposited using pulse electron deposition technique. We were able to modulate roughness of the deposited films by controlling the beam energy and hence the electron penetration depth. The films deposited at higher beam energy showed contact angle as high as 166 o . The scanning electron and atomic force microscope studies revealed clustered growth and two level sub-micron asperities on films deposited at higher energies. Such dual-scale hierarchical roughness and heterogeneities at the water-surface interface was attributed to the observed contact angle and thus its superhydrophobic nature.

  12. Superhydrophobic polytetrafluoroethylene thin films with hierarchical roughness deposited using a single step vapor phase technique

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Sushant, E-mail: sushant3@ufl.ed [Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 (United States); Arjunan, Arul Chakkaravarthi [Sinmat Incorporated, 2153 SE Hawthorne Road, 129, Gainesville, Florida 32641 (United States); Deshpande, Sameer; Seal, Sudipta [Advanced Material Processing and Analysis Center, University of Central Florida, Orlando, Florida 32816 (United States); Singh, Deepika [Sinmat Incorporated, 2153 SE Hawthorne Road, 129, Gainesville, Florida 32641 (United States); Singh, Rajiv K. [Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 (United States)

    2009-06-30

    Superhydrophobic polytetrafluoroethylene films with hierarchical surface roughness were deposited using pulse electron deposition technique. We were able to modulate roughness of the deposited films by controlling the beam energy and hence the electron penetration depth. The films deposited at higher beam energy showed contact angle as high as 166{sup o}. The scanning electron and atomic force microscope studies revealed clustered growth and two level sub-micron asperities on films deposited at higher energies. Such dual-scale hierarchical roughness and heterogeneities at the water-surface interface was attributed to the observed contact angle and thus its superhydrophobic nature.

  13. Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Rybalchenko, D. V.; Mintairov, S. A.; Salii, R. A.; Shvarts, M. Z.; Timoshina, N. Kh.; Kalyuzhnyy, N. A., E-mail: nickk@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-01-15

    Metamorphic Ga{sub 0.76}In{sub 0.24}As heterostructures for photovoltaic converters are grown by the MOCVD (metal–organic chemical vapor deposition) technique. It is found that, due to the valence-band offset at the p-In{sub 0.24}Al{sub 0.76}As/p-In{sub 0.24}Ga{sub 0.76}As (wide-gap window/emitter) heterointerface, a potential barrier for holes arises as a result of a low carrier concentration in the wide-gap material. The use of an InAlGaAs solid solution with an Al content lower than 40% makes it possible to raise the hole concentration in the widegap window up ~9 × 10{sup 18} cm{sup –3} and completely remove the potential barrier, thereby reducing the series resistance of the device. The parameters of an GaInAs metamorphic buffer layer with a stepwise In content profile are calculated and its epitaxial growth conditions are optimized, which improves carrier collection from the n-GaInAs base region and provides a quantum efficiency of 83% at a wavelength of 1064 nm. Optimization of the metamorphic heterostructure of the photovoltaic converter results in that its conversion efficiency for laser light with a wavelength of 1064 nm is 38.5%.

  14. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  15. Coating of ceramic powders by chemical vapor deposition techniques (CVD)

    International Nuclear Information System (INIS)

    Haubner, R.; Lux, B.

    1997-01-01

    New ceramic materials with selected advanced properties can be designed by coating of ceramic powders prior to sintering. By variation of the core and coating material a large number of various powders and ceramic materials can be produced. Powders which react with the binder phase during sintering can be coated with stable materials. Thermal expansion of the ceramic materials can be adjusted by varying the coating thickness (ratio core/layer). Electrical and wear resistant properties can be optimized for electrical contacts. A fluidized bed reactor will be designed which allow the deposition of various coatings on ceramic powders. (author)

  16. Uranium solution mining cost estimating technique: means for rapid comparative analysis of deposits

    International Nuclear Information System (INIS)

    Anon.

    1978-01-01

    Twelve graphs provide a technique for determining relative cost ranges for uranium solution mining projects. The use of the technique can provide a consistent framework for rapid comparative analysis of various properties of mining situations. The technique is also useful to determine the sensitivities of cost figures to incremental changes in mining factors or deposit characteristics

  17. Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells

    NARCIS (Netherlands)

    Schmidt, J.; Werner, F.; Veith, B.; Zielke, D.; Bock, R.; Tiba, M.V.; Poodt, P.; Roozeboom, F.; Li, A.; Cuevas, A.; Brendel, R.

    2010-01-01

    We present independently confirmed efficiencies of 21.4% for PERC cells with plasma-assisted atom-ic-layer-deposited (plasma ALD) Al2O3 rear passivation and 20.7% for cells with thermal ALD-Al2O3. Additionally, we evaluate three different industrially relevant techniques for the deposition of

  18. The Development of a Differential Deposition Technique for Figure Correction in Grazing Incidence Optics

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose the development of a physical-vapor-deposition coating technique to correct residual figure errors in grazing-incidence optics. The process involves...

  19. Transport Properties of LCMO Granular Films Deposited by the Pulsed Electron Deposition Technique

    Institute of Scientific and Technical Information of China (English)

    CHEN Leiming; XU Bin; ZHANG Yan; CHEN Zhenping

    2011-01-01

    By finely controlling the deposition parameters in the pulsed electron deposition process,granular La2/3Ca1/3MnO3 (LCMO) film was grown on silicon substrates.The substrate temperature,ambient pressure in the deposition chamber and acceleration potential for the electron beam were all found to affect the grain size of the film,resulting in different morphologies of the samples.Transport properties of the obtained granular films,especially the magnetoresistance (MR),were studied.Prominent low-field MR was observed in all samples,indicating the forming of grain boundaries in the sample.The low-field MR show great sensitive to the morphology evolution,which reaches the highest value of about 40% for the sample with the grain size of about 250 nm.More interestingly,positive-MR (p-MR) was also detected above 300 K when low magnetic field applying,whereas it disappeared with higher magnetic field applied up to 1.5 and 2 Tesla.Instead of the spinpolarized tunneling process being commonly regarded as a responsible reason,lattice mismatch between LCMO film and silicon substrate appears to be the origin of the p-MR

  20. Silicon doping techniques using chemical vapor dopant deposition

    NARCIS (Netherlands)

    Popadic, M.

    2009-01-01

    Ultrashallow junctions are essential for the achievement of superior transistor performance, both in MOSFET and bipolar transistors. The stringent demands require state-of-the-art fabrication techniques. At the same time, in a different context, the accurate fabrication of various n type doping

  1. Structural characterization of the nickel thin film deposited by glad technique

    Directory of Open Access Journals (Sweden)

    Potočnik J.

    2013-01-01

    Full Text Available In this work, a columnar structure of nickel thin film has been obtained using an advanced deposition technique known as Glancing Angle Deposition. Nickel thin film was deposited on glass sample at the constant emission current of 100 mA. Glass sample was positioned 15 degrees with respect to the nickel vapor flux. The obtained nickel thin film was characterized by Force Modulation Atomic Force Microscopy and by Scanning Electron Microscopy. Analysis indicated that the formation of the columnar structure occurred at the film thickness of 1 μm, which was achieved for the deposition time of 3 hours. [Projekat Ministarstva nauke Republike Srbije, br. III45005

  2. Enhanced flux pinning in MOCVD-YBCO films through Zr additions : systematic feasibility studies.

    Energy Technology Data Exchange (ETDEWEB)

    Aytug, T.; Paranthaman, M.; Specht, E. D.; Zhang, Y.; Kim, K.; Zuev, Y. L.; Cantoni, C.; Goyal, A.; Christen, D. K.; Maroni, V. A.; Chen, Y.; Selvamanickam, V.; ORNL; SuperPower, Inc.

    2010-01-01

    Systematic effects of Zr additions on the structural and flux pinning properties of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) films deposited by metal-organic chemical vapor deposition (MOCVD) have been investigated. Detailed characterization, conducted by coordinated transport, x-ray diffraction, scanning and transmission electron microscopy analyses, and imaging Raman microscopy have revealed trends in the resulting property/performance correlations of these films with respect to varying mole percentages (mol%) of added Zr. For compositions {le} 7.5 mol%, Zr additions lead to improved in-field critical current density, as well as extra correlated pinning along the c-axis direction of the YBCO films via the formation of columnar, self-assembled stacks of BaZrO{sub 3} nanodots.

  3. Enhanced flux pinning in MOCVD-YBCO films through Zr additions: systematic feasibility studies

    International Nuclear Information System (INIS)

    Aytug, T; Paranthaman, M; Specht, E D; Zhang, Y; Kim, K; Zuev, Y L; Cantoni, C; Goyal, A; Christen, D K; Maroni, V A; Chen, Y; Selvamanickam, V

    2010-01-01

    Systematic effects of Zr additions on the structural and flux pinning properties of YBa 2 Cu 3 O 7-δ (YBCO) films deposited by metal-organic chemical vapor deposition (MOCVD) have been investigated. Detailed characterization, conducted by coordinated transport, x-ray diffraction, scanning and transmission electron microscopy analyses, and imaging Raman microscopy have revealed trends in the resulting property/performance correlations of these films with respect to varying mole percentages (mol%) of added Zr. For compositions ≤7.5 mol%, Zr additions lead to improved in-field critical current density, as well as extra correlated pinning along the c-axis direction of the YBCO films via the formation of columnar, self-assembled stacks of BaZrO 3 nanodots.

  4. Enhanced flux pinning in MOCVD-YBCO films through Zr additions: systematic feasibility studies

    Energy Technology Data Exchange (ETDEWEB)

    Aytug, T; Paranthaman, M; Specht, E D; Zhang, Y; Kim, K; Zuev, Y L; Cantoni, C; Goyal, A; Christen, D K [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Maroni, V A [Argonne National Laboratory, Argonne, IL 60439 (United States); Chen, Y; Selvamanickam, V, E-mail: aytugt@ornl.go [SuperPower, Incorporated, 450 Duane Avenue, Schenectady, NY 12304 (United States)

    2010-01-15

    Systematic effects of Zr additions on the structural and flux pinning properties of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) films deposited by metal-organic chemical vapor deposition (MOCVD) have been investigated. Detailed characterization, conducted by coordinated transport, x-ray diffraction, scanning and transmission electron microscopy analyses, and imaging Raman microscopy have revealed trends in the resulting property/performance correlations of these films with respect to varying mole percentages (mol%) of added Zr. For compositions {<=}7.5 mol%, Zr additions lead to improved in-field critical current density, as well as extra correlated pinning along the c-axis direction of the YBCO films via the formation of columnar, self-assembled stacks of BaZrO{sub 3} nanodots.

  5. GaN epitaxial layers grown on multilayer graphene by MOCVD

    Science.gov (United States)

    Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe

    2018-04-01

    In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.

  6. Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru; Kalyuzhnyy, N. A.; Nadtochiy, A. M.; Maximov, M. V. [St. Petersburg Academic University (Russian Federation); Rouvimov, S. S. [University of Notre Dame (United States); Zhukov, A. E. [St. Petersburg Academic University (Russian Federation)

    2017-03-15

    The deposition of In{sub x}Ga{sub 1–x}As with an indium content of 0.3–0.5 and an average thickness of 3–27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the photoluminescence peak for the hybrid InGaAs quantum well–dots nanostructures varies from 950 to 1100 nm. The optimal average In{sub x}Ga{sub 1–x}As thicknesses and compositions at which the emission wavelength is the longest with a high quantum efficiency retained are determined.

  7. Epitaxial growth of InP on SI by MOCVD

    International Nuclear Information System (INIS)

    Konushi, F.; Seki, A.; Kudo, J.; Sato, H.; Kakimoto, S.; Fukushima, T.; Kubota, Y.; Koba, M.

    1988-01-01

    The authors have studied the heteroepitaxial growth of InP on large diameter Si substrates using MOCVD. A new MOCVD system with four inch wafer size capability was utilized in the growth. Single domain InP films have been successfully grown on four inch Si substrates by using a new heterostructure with a thin GaAs intermediate layer. In this paper, the authors describe the crystalline quality and residual stress of InP epilayers, estimated by etch pit density and x-ray diffraction, respectively. The authors also reports on the reduction of EPD by post-growth annealing

  8. Geochemical prospecting techniques for ore deposits in periglacial regions

    International Nuclear Information System (INIS)

    Pitul'ko, V.M.

    1977-01-01

    Necessity and prospects of the implementation of geochemical methods of search in periglacial regions are discussed. The behaviour of chemical elements under the conditions of oxide and sulphate cryogenic topographies whose development has common regularities is analyzed. According to the specificity of migration the observed elements have been divided into four groups: active, mobile, low-mobile and inert migrants. Uranium which is present in ores in the form of pitchblende in oxide zones of the oxidation is actively redistributed. In zones of the oxidation of rare metal metasomatites connected with alkalic ultrabasic rocks only that part of U is mobile which being released from pyrochlore forms the regenerated uranium black and the partial enrichment of the iron gossan. Th like other elements of the 4-th group in all oxidation zones is observed to accumulate in minerals - concentrators: thorite, pyrochlore and so on. A diagram is plotted which characterizes the migration of elements whithin aureole landscapes as well as in automonous and dependent topographies of ore-free areas. The complex nature of secondary aureoles displays the most complete anomalous spectrum of elements - indicators of mineralization. The table of the most typical elements - indicators of the secondary scattering of some endogenic deposits of the cryolitic zone is given

  9. Deuterium permeation of amorphous alumina coating on 316L prepared by MOCVD

    International Nuclear Information System (INIS)

    Li Shuai; He Di; Liu Xiaopeng; Wang Shumao; Jiang Lijun

    2012-01-01

    Highlights: ► Deuterium permeation behavior of alumina coating by MOCVD is investigated. ► The as-prepared alumina is amorphous. ► The alumina coating is dense and well adherent to substrate. ► Deuterium permeation rate of alumina coating is 2–3 orders of magnitude lower than martensitic steels. - Abstract: The deuterium permeation behavior of the alumina coating on 316L stainless steel prepared by metal organic chemical vapor deposition (MOCVD) was investigated. The alumina coating was also characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and scanning electron microscope (SEM). It was found that the as-prepared coating consisted of amorphous alumina. This alumina coating had a dense, crack-free and homogeneous morphology. Although the alumina coating was amorphous, effective suppression of deuterium permeation was demonstrated. The deuterium permeability of the alumina coating was 51–60 times less than that of the 316L stainless steel and 153–335 times less than that of the referred low activation martensitic steels at 860–960 K.

  10. Biomaterial thin film deposition and characterization by means of MAPLE technique

    International Nuclear Information System (INIS)

    Bloisi, F.; Vicari, L.; Papa, R.; Califano, V.; Pedrazzani, R.; Bontempi, E.; Depero, L.E.

    2007-01-01

    Polyethylene glycol (PEG) is a polymer with technologically important applications, especially as a biomaterial. Several biomedical applications (such as tissue engineering, spatial patterning of cells, anti-biofouling and biocompatible coatings) require the application of high quality PEG thin films. In order to have a good adhesion to substrate chemically modified polymer molecules have been used, but for some 'in vivo' applications it is essential to deposit a film with the same chemical and structural properties of bulk PEG. Pulsed laser deposition (PLD) technique is generally able to produce high quality thin films but it is inadequate for polymer/organic molecules. MAPLE (Matrix Assisted Pulsed Laser Evaporation) is a recently developed PLD based thin film deposition technique, particularly well suited for organic/polymer thin film deposition. Up to now MAPLE depositions have been carried out mainly by means of modified PLD systems, using excimer lasers operating in UV, but the use of less energetic radiations can minimize the photochemical decomposition of the polymer molecules. We have used a deposition system explicitly designed for MAPLE technique connected to a Q-switched Ng:YAG pulsed laser which can be operated at different wavelength ranging from IR to UV in order to optimise the deposition parameters. The capability of MAPLE technique to deposit PEG has been confirmed and preliminary results show that visible (532 nm wavelength) radiation gives better results with respect to UV (355 nm) radiation. Despite usually UV wavelengths have been used and even if more systematic tests must be performed, it is important to underline that the choice of laser wavelength plays an important role in the application of MAPLE thin film deposition technique

  11. Metalorganic atomic layer deposition of TiN thin films using TDMAT and NH3

    International Nuclear Information System (INIS)

    Kim, Hyo Kyeom; Kim, Ju Youn; Park, Jin Yong; Kim, Yang Do; Kim, Young Do; Jeon, Hyeong Tag; Kim, Won Mok

    2002-01-01

    TiN films were deposited by using the metalorganic atomic layer deposition (MOALD) method using tetrakis-dimethyl-amino-titanium (TDMAT) as the titanium precursor and ammonia (NH 3 ) as the reactant gas. Two saturated TiN film growth regions were observed in the temperature ranges from 175 and 190 .deg. C and from 200 and 210 .deg. C. TiN films deposited by the MOALD technique showed relatively lower carbon content than films deposited by metalorganic chemical vapor deposition (MOCVD) method. TiN films deposited at around 200 .deg. C under standard conditions showed the resistivity values as low as 500 μΩ-cm, which is about one order lower than the values for TiN films deposited by MOCVD using TDMAT or TDMAT with NH 3 . Also, the carbon incorporation and the resistivity were further decreased with increasing Ar purge time and flow rate. TiN films deposited at temperature below 300 .deg. C showed amorphous characteristics. TiN film deposited on contact holes, about 0.4-μm wide and 0.8-μm deep, by using the MOALD method showed excellent conformal deposition with almost 100% step coverage. This study demonstrates that the processing parameters need to be carefully controlled to optimize the film properties that the processing parameters need to be carefully controlled to optimize the film properties when using the ALD technique and that TiN films deposited by using the MOALD method exhibited excellent film properties compared to those of films deposited by using other CVD methods

  12. Deposition techniques for the preparation of thin film nuclear targets

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1987-07-01

    This review commences with a brief description of the basic principles that regulate vacuum evaporation and the physical processes involved in thin film formation, followed by a description of the experimental methods used. The principle methods of heating the evaporant are detailed and the means of measuring and controlling the film thickness are elucidated. Types of thin film nuclear targets are considered and various film release agents are listed. Thin film nuclear target behaviour under ion-bombardment is described and the dependence of nuclear experimental results upon target thickness and uniformity is outlined. Special problems associated with preparing suitable targets for lifetime measurements are discussed. The causes of stripper-foil thickening and breaking under heavy-ion bombardment are considered. A comparison is made between foils manufactured by a glow discharge process and those produced by vacuum sublimation. Consideration is given to the methods of carbon stripper-foil manufacture and to the characteristics of stripper-foil lifetimes are considered. Techniques are described that have been developed for the fabrication of special targets, both from natural and isotopically enriched material, and also of elements that are either chemically unstable, or thermally unstable under irradiation. The reduction of metal oxides by the use of hydrogen or by utilising a metallothermic technique, and the simultaneous evaporation of reduced rare earth elements is described. A comprehensive list of the common targets is presented

  13. A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Auciello, O. (Microelectronics Center of North Carolina, Research Triangle Park, NC (USA) North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Krauss, A.R. (Argonne National Lab., IL (USA))

    1990-01-01

    The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

  14. Synthesis and properties of barium diketonates as precursors for MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Drozdov, A.A. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Troyanov, S.I. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Kuzmina, N.P. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Martynenko, L.I. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Alikhanyan, A.S. (Dept. of Chemistry, Moscow State Univ. (Russian Federation)); Malkerova, I.P. (Dept. of Chemistry, Moscow State Univ. (Russian Federation))

    1993-08-01

    The structures of barium diketonates depend on the way in which they are synthesized. It is shown that there is a correlation between the volatility of these compounds and their crystal structures. A new volatile mononuclear adduct of barium dipivaloylmethanate suitable for MOCVD is suggested. (orig.).

  15. Synthesis and properties of barium diketonates as precursors for MOCVD

    International Nuclear Information System (INIS)

    Drozdov, A.A.; Troyanov, S.I.; Kuzmina, N.P.; Martynenko, L.I.; Alikhanyan, A.S.; Malkerova, I.P.

    1993-01-01

    The structures of barium diketonates depend on the way in which they are synthesized. It is shown that there is a correlation between the volatility of these compounds and their crystal structures. A new volatile mononuclear adduct of barium dipivaloylmethanate suitable for MOCVD is suggested. (orig.)

  16. Composition and microstructure of beryllium carbide films prepared by thermal MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    He, Yu-dan; Luo, Jiang-shan; Li, Jia; Meng, Ling-biao; Luo, Bing-chi; Zhang, Ji-qiang; Zeng, Yong; Wu, Wei-dong, E-mail: wuweidongding@163.com

    2016-02-15

    Highlights: • Non-columnar-crystal Be{sub 2}C films were firstly prepared by thermal MOCVD. • Beryllium carbide was always the dominant phase in the films. • α-Be and carbon existed in films deposited below and beyond 400 °C, respectively. • Morphology evolved with temperatures and no columnar grains were characterized. • The preferred substrate temperature for depositing high quality Be{sub 2}C films was 400 °C. - Abstract: Beryllium carbide films without columnar-crystal microstructures were prepared on the Si (1 0 0) substrate by thermal metal organic chemical vapor deposition using diethylberyllium as precursor. The influence of the substrate temperature on composition and microstructure of beryllium carbide films was systematically studied. Crystalline beryllium carbide is always the dominant phase according to XRD analysis. Meanwhile, a small amount of α-Be phase exists in films when the substrate temperature is below 400 °C, and hydrocarbon or amorphous carbon exists when the temperature is beyond 400 °C. Surfaces morphology shows transition from domes to cylinders, to humps, and to tetraquetrous crystalline needles with the increase of substrate temperature. No columnar grains are characterized throughout the thickness as revealed from the cross-section views. The average densities of these films are determined to be 2.04–2.17 g/cm{sup 3}. The findings indicate the substrate temperature has great influences on the composition and microstructure of the Be{sub 2}C films grown by thermal MOCVD.

  17. Novel geochemical techniques integrated in exploration for uranium deposits at depth

    International Nuclear Information System (INIS)

    Kyser, K.

    2014-01-01

    Mineral deposits are in fact geochemical anomalies, and as such their detection and assessment of their impact on the environment should be facilitated using geochemical techniques. Although geochemistry has been used directly in the discovery of uranium deposits and more indirectly in shaping deposit models, the novel applications of geochemistry and integration with other data can be more effective in formulating exploration and remediation strategies. Recent research on the use of geochemistry in detecting uranium deposits at depth include: (1) more effective integration of geochemical with geophysical data to refine targets, (2) revealing element distributions in and around deposits to adequately assess the total chemical environment associated with the deposit, (3) the use of element tracing using elemental concentrations and isotopic compositions in the near surface environment to detect specific components that have migrated to the surface from uranium deposits at depth, (4) understand the effects of both macro- and micro-environments on element mobility across the geosphere-biosphere interface to enhance exploration using select media for uranium at depth. Geophysical data used in exploration can identify areas of conductors where redox contrasts may host mineralization, structures that act to focus fluids during formation of the deposits and act as conduits for element migration to the surface, and contrasts in geology that are required for the deposits. However, precision of these data is greatly diminished with depth, but geochemical data from drill core or surface media can enhance target identification when integrated with geophysical data. Geochemical orientation surveys over known unconformity-related deposits at depth clearly identify mineralization 900m deep. Drill core near the deposit, clay-size fractions separated from soil horizons and vegetation over and far from the deposit record element migration from the deposit as radiogenic He, Rn and Pb

  18. Rubidium-strontium isotoppe study of Muruntan deposit. 1.Ore vien dating by isochrone technique

    International Nuclear Information System (INIS)

    Kostitsyn, Yu.A.

    1993-01-01

    Hydrothermal viens of Muruntau gold-ore deposit (Central Kyzylkum) have been studies by the isochrone technique. The ages obtained for the quartz-tourmaline (257+13 Ma), quartz-arsenopyrite (230.3+-3.5 Ma) and quartz-adularia (219.4+-4.2 Ma) hydrothermal viens reflect the different stages of the deposit evolution: gold-ore and gold-silver one. Strontium isotope analysis reveals that the matter of hydrothermal viens is originated from the surrounding black schists

  19. Overlayer structure of subphthalocyanine derivative deposited on Au (111) surface by a spray-jet technique

    International Nuclear Information System (INIS)

    Suzuki, Hitoshi; Yamada, Toshiki; Miki, Hideki; Mashiko, Shinro

    2006-01-01

    A new spray-jet technique was used to deposit subphthalocyanine derivative (chloro[tri-tert-butyl subphthalocyaninato]boron (TBSubPc)) on Au (111) surface in an ultra-high vacuum (UHV) chamber. The deposited molecular overlayer was observed with UHV scanning tunneling microscopy (STM) at 77 K. The STM images showed that TBSubPc molecules formed a stripe pattern with regular spacing, indicating that they preferentially adsorbed along the herringbone structure of the Au (111) surface. This behavior was very similar to that of TBSubPc molecules deposited by thermal evaporation

  20. Reduced thermal budget processing of Y-Ba-Cu-O films by rapid isothermal processing assisted metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Singh, R.; Sinha, S.; Hsu, N.J.; Ng, J.T.C.; Chou, P.; Thakur, R.P.S.; Narayan, J.

    1991-01-01

    Metalorganic chemical vapor deposition (MOCVD) has the potential of emerging as a viable technique to fabricate ribbons, tapes, coated wires, and the deposition of films of high-temperature superconductors, and related materials. As a reduced thermal budget processing technique, rapid isothermal processing (RIP) based on incoherent radiation as the source of energy can be usefully coupled to conventional MOCVD. In this paper we report on the deposition and characterization of high quality superconducting thin films of Y-Ba-Cu-O (YBCO) on yttrium stabilized zirconia substrates by RIP assisted MOCVD. Using O 2 gas as the source of oxygen, YBCO films deposited initially at 600 degree C for 1 min and at 745 degree C for 25 min followed by deposition at 780 degree C for 45 s are primarily c-axis oriented and zero resistance is observed at 89--90 K. The zero magnetic field current density at 53 and 77 K are 1.2x10 6 and 3x10 5 A/cm 2 , respectively. By using a mixture of N 2 O and O 2 as the oxygen source substrate temperature was further reduced in the deposition of YBCO films. The films deposited initially at 600 degree C for 1 min and than at 720 degree C for 30 min are c-axis oriented and with zero resistance being observed at 91 K. The zero magnetic field current densities at 53 and 77 K are 3.4x10 6 and 1.2x10 6 A/cm 2 , respectively. To the best of our knowledge this is the highest value of critical current density, J c for films deposited by MOCVD at a substrate temperature as low as 720 degree C. It is envisioned that high energy photons from the incoherent light source and the use of a mixture of N 2 O and O 2 as the oxygen source, assist chemical reactions and lower overall thermal budget for processing of these films

  1. Various types of GaN/InGaN nanostructures grown by MOCVD on Si(111) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Rozhavskaya, Mariya M.; Lundin, Wsevolod V.; Zavarin, Evgeniy E.; Lundina, Elena Yu.; Troshkov, Sergey I.; Davydov, Valery Yu.; Yagovkina, Mariya A.; Brunkov, Pavel N.; Tsatsulnikov, Andrey F. [Ioffe Physico-Technical Institute of the RAS, Politekhnicheskaya 26, 194021 St. Petersburg (Russian Federation)

    2013-03-15

    In this paper we obtained GaN and InGaN nanowires on AlN/Si (111) templates via pulsed Metal Organic Chemical Vapour Deposition (MOCVD). The growth modes were investigated, in which selective growth is possible. The impact of NH{sub 3} flow and TMG flow and exposure time were investigated. Also the possibility of using indium catalyst was studied. It was shown that In can be used in Au-In melt and as self-sufficient catalyst. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Adhesion strength study of IBAD-MOCVD-based 2G HTS wire using a peel test

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Y., E-mail: yzhang@superpower-inc.com [SuperPower Inc., 450 Duane Avenue, Schenectady, NY 12304 (United States); Hazelton, D.W.; Knoll, A.R.; Duval, J.M.; Brownsey, P.; Repnoy, S.; Soloveichik, S.; Sundaram, A.; McClure, R.B. [SuperPower Inc., 450 Duane Avenue, Schenectady, NY 12304 (United States); Majkic, G.; Selvamanickam, V. [University of Houston, 4800 Calhoun Road, Houston, TX 77204 (United States)

    2012-02-15

    A peel test was used to study the adhesion strength of a commercial grade 2G HTS wire which features a characteristic multilayer structure with the rare earth-based MOCVD superconducting film deposited on an IBAD-MgO template. The peel test could be carried out at various peeling angles (from 90 Degree-Sign to 180 Degree-Sign) and the peel strength of a wire was defined as the steady-state peeling load determined from a load-displacement curve. The test results had good reproducibility and accuracy, making the test a reliable and useful method for studying the adhesion strength of the wire. By characterizing the peeled surfaces the weakest interface in a wire could be identified. The peel strength data of the wire was analyzed together with the performance of the experimental magnet coils fabricated using the wire. The effect of the silver contact layer annealing on the peel strength is discussed.

  3. Deuterium permeation of amorphous alumina coating on 316L prepared by MOCVD

    Science.gov (United States)

    Li, Shuai; He, Di; Liu, Xiaopeng; Wang, Shumao; Jiang, Lijun

    2012-01-01

    The deuterium permeation behavior of the alumina coating on 316L stainless steel prepared by metal organic chemical vapor deposition (MOCVD) was investigated. The alumina coating was also characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and scanning electron microscope (SEM). It was found that the as-prepared coating consisted of amorphous alumina. This alumina coating had a dense, crack-free and homogeneous morphology. Although the alumina coating was amorphous, effective suppression of deuterium permeation was demonstrated. The deuterium permeability of the alumina coating was 51-60 times less than that of the 316L stainless steel and 153-335 times less than that of the referred low activation martensitic steels at 860-960 K.

  4. Crystalline, Optical and Electrical Properties of NiZnO Thin Films Fabricated by MOCVD

    International Nuclear Information System (INIS)

    Wang Jin; Wang Hui; Zhao Wang; Ma Yan; Li Wan-Cheng; Shi Zhi-Feng; Zhao Long; Zhang Bao-Lin; Dong Xin; Du Guo-Tong; Xia Xiao-Chuan

    2011-01-01

    NiZnO thin films are grown on c-plane sapphire substrates by using a photo-assisted metal organic chemical vapor deposition (MOCVD) system. The effect of the Ni content on the crystalline, optical and electrical properties of the films are researched in detail. The NiZnO films could retain a basic wurtzite structure when the Ni content is less than 0.18. As Ni content increases, crystal quality degradation could be observed in the x-ray diffraction patterns and a clear red shift of the absorption edge can be observed in the transmittance spectrum. Furthermore, the donor defects in the NiZnO film can be compensated for effectively by increasing the Ni content. The change of Ni content has an important effect on the properties of NiZnO films. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Adhesion strength study of IBAD-MOCVD-based 2G HTS wire using a peel test

    International Nuclear Information System (INIS)

    Zhang, Y.; Hazelton, D.W.; Knoll, A.R.; Duval, J.M.; Brownsey, P.; Repnoy, S.; Soloveichik, S.; Sundaram, A.; McClure, R.B.; Majkic, G.; Selvamanickam, V.

    2012-01-01

    A peel test was used to study the adhesion strength of a commercial grade 2G HTS wire which features a characteristic multilayer structure with the rare earth-based MOCVD superconducting film deposited on an IBAD-MgO template. The peel test could be carried out at various peeling angles (from 90° to 180°) and the peel strength of a wire was defined as the steady-state peeling load determined from a load-displacement curve. The test results had good reproducibility and accuracy, making the test a reliable and useful method for studying the adhesion strength of the wire. By characterizing the peeled surfaces the weakest interface in a wire could be identified. The peel strength data of the wire was analyzed together with the performance of the experimental magnet coils fabricated using the wire. The effect of the silver contact layer annealing on the peel strength is discussed.

  6. Influence of solution deposition rate on properties of V_2O_5 thin films deposited by spray pyrolysis technique

    International Nuclear Information System (INIS)

    Abd–Alghafour, N. M.; Ahmed, Naser M.; Hassan, Zai; Mohammad, Sabah M.

    2016-01-01

    Vanadium oxide (V_2O_5) thin films were deposited on glass substrates by using a cost-efficient spray pyrolysis technique. The films were grown at 350° through thermal decomposition of VCl_3 in deionized water with different solution spray rates. The high resolution X-ray diffraction results revealed the formation of nanocrystalline films having orthorhombic structures with preferential orientation along (101) direction. The spray rate influenced the surface morphology and crystallite size of the films. The crystallite size was found to increase whereas the micro-strain was decreased by increasing the spray deposition rates. The increase in crystallite size and decrease in the macrostrain resulted in an improvement in the films’ crystallinity. The UV-Visible spectroscopy analysis indicated that the average transmittance of all films lies in the range 75-80 %. The band gap of V_2O_5 film was decreased from 2.65 to 2.46 eV with increase of the spray deposition rate from 5 ml/min to 10 ml/min. first, second, and third level headings (first level heading).

  7. Development of Y-BA-CU-O Coated Conductor Using Metal Organic Chemical Vapor Deposition

    National Research Council Canada - National Science Library

    Selvamanickam, V

    2003-01-01

    .... The program includes a study of the a) influence of MOCVD processing conditions such as the flow rate of precursor vapors, precursor vaporization temperatures, oxygen partial pressure, reactor pressure, and the deposition temperature...

  8. Handbook of thin film deposition processes and techniques principles, methods, equipment and applications

    CERN Document Server

    Seshan, Krishna

    2002-01-01

    New second edition of the popular book on deposition (first edition by Klaus Schruegraf) for engineers, technicians, and plant personnel in the semiconductor and related industries. This book traces the technology behind the spectacular growth in the silicon semiconductor industry and the continued trend in miniaturization over the last 20 years. This growth has been fueled in large part by improved thin film deposition techniques and the development of highly specialized equipment to enable this deposition. The book includes much cutting-edge material. Entirely new chapters on contamination and contamination control describe the basics and the issues-as feature sizes shrink to sub-micron dimensions, cleanliness and particle elimination has to keep pace. A new chapter on metrology explains the growth of sophisticated, automatic tools capable of measuring thickness and spacing of sub-micron dimensions. The book also covers PVD, laser and e-beam assisted deposition, MBE, and ion beam methods to bring together a...

  9. Growth Assisted by Glancing Angle Deposition: A New Technique to Fabricate Highly Porous Anisotropic Thin Films.

    Science.gov (United States)

    Sanchez-Valencia, Juan Ramon; Longtin, Remi; Rossell, Marta D; Gröning, Pierangelo

    2016-04-06

    We report a new methodology based on glancing angle deposition (GLAD) of an organic molecule in combination with perpendicular growth of a second inorganic material. The resulting thin films retain a very well-defined tilted columnar microstructure characteristic of GLAD with the inorganic material embedded inside the columns. We refer to this new methodology as growth assisted by glancing angle deposition or GAGLAD, since the material of interest (here, the inorganic) grows in the form of tilted columns, though it is deposited under a nonglancing configuration. As a "proof of concept", we have used silver and zinc oxide as the perpendicularly deposited material since they usually form ill-defined columnar microstructures at room temperature by GLAD. By means of our GAGLAD methodology, the typical tilted columnar microstructure can be developed for materials that otherwise do not form ordered structures under conventional GLAD. This simple methodology broadens significantly the range of materials where control of the microstructure can be achieved by tuning the geometrical deposition parameters. The two examples presented here, Ag/Alq3 and ZnO/Alq3, have been deposited by physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD), respectively: two different vacuum techniques that illustrate the generality of the proposed technique. The two type of hybrid samples present very interesting properties that demonstrate the potentiality of GAGLAD. On one hand, the Ag/Alq3 samples present highly optical anisotropic properties when they are analyzed with linearly polarized light. To our knowledge, these Ag/Alq3 samples present the highest angular selectivity reported in the visible range. On the other hand, ZnO/Alq3 samples are used to develop highly porous ZnO thin films by using Alq3 as sacrificial material. In this way, antireflective ZnO samples with very low refractive index and extinction coefficient have been obtained.

  10. Epitaxial Oxide Thin Films Grown by Solid Source Metal-Organic Chemical Vapor Deposition.

    Science.gov (United States)

    Lu, Zihong

    1995-01-01

    The conventional liquid source metal-organic chemical vapor deposition (MOCVD) technique is capable of producing large area, high quality, single crystal semiconductor films. However, the growth of complex oxide films by this method has been hampered by a lack of suitable source materials. While chemists have been actively searching for new source materials, the research work reported here has demonstrated the successful application of solid metal-organic sources (based on tetramethylheptanedionate) to the growth of high quality thin films of binary compound cerium dioxide (CeO_2), and two more complex materials, the ternary compound lithium niobate (LiNbO_3), with two cations, and the quaternary compound strontium barium niobate (SBN), with three cations. The growth of CeO_2 thin films on (1012)Al_2O_3 substrates has been used as a model to study the general growth behavior of oxides. Factors affecting deposition rate, surface morphology, out-of-plane mosaic structure, and film orientation have been carefully investigated. A kinetic model based on gas phase prereaction is proposed to account for the substrate temperature dependence of film orientation found in this system. Atomically smooth, single crystal quality cerium dioxide thin films have been obtained. Superconducting YBCO films sputtered on top of solid source MOCVD grown thin cerium dioxide buffer layers on sapphire have been shown to have physical properties as good as those of YBCO films grown on single crystal MgO substrates. The thin film growth of LiNbO_3 and Sr_{1-x}Ba _{x}Nb_2 O_6 (SBN) was more complex and challenging. Phase purity, transparency, in-plane orientation, and the ferroelectric polarity of LiNbO _3 films grown on sapphire substrates was investigated. The first optical quality, MOCVD grown LiNbO _3 films, having waveguiding losses of less than 2 dB/cm, were prepared. An important aspect of the SBN film growth studies involved finding a suitable single crystal substrate material. Mg

  11. An economic CVD technique for pure SnO2 thin films deposition ...

    Indian Academy of Sciences (India)

    An economic CVD technique for pure SnO2 thin films deposition: Temperature effects ..... C are depicted in figure 7. It is observed that the cut-off wave- ... cating that the energy gap of the SnO2 films varies among. 3·54, 3·35 and 1·8 eV.

  12. The study of metal sulphide nanomaterials obtained by chemical bath deposition and hot-injection technique

    Science.gov (United States)

    Maraeva, E. V.; Alexandrova, O. A.; Forostyanaya, N. A.; Levitskiy, V. S.; Mazing, D. S.; Maskaeva, L. N.; Markov, V. Ph; Moshnikov, V. A.; Shupta, A. A.; Spivak, Yu M.; Tulenin, S. S.

    2015-11-01

    In this study lead sulphide - cadmium sulphide based layers were obtained through chemical deposition of water solutions and cadmium sulphide quantum dots were formed through hot-injection technique. The article discusses the results of surface investigations with the use of atomic force microscopy, Raman spectroscopy and photoluminescence measurements.

  13. The study of metal sulphide nanomaterials obtained by chemical bath deposition and hot-injection technique

    International Nuclear Information System (INIS)

    Maraeva, E V; Alexandrova, O A; Levitskiy, V S; Mazing, D S; Moshnikov, V A; Shupta, A A; Spivak, Yu M; Forostyanaya, N A; Maskaeva, L N; Markov, V Ph; Tulenin, S S

    2015-01-01

    In this study lead sulphide – cadmium sulphide based layers were obtained through chemical deposition of water solutions and cadmium sulphide quantum dots were formed through hot-injection technique. The article discusses the results of surface investigations with the use of atomic force microscopy, Raman spectroscopy and photoluminescence measurements. (paper)

  14. A comparative study of CdS thin films deposited by different techniques

    Energy Technology Data Exchange (ETDEWEB)

    Pérez-Hernández, G., E-mail: german.perez@ujat.mx [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Pantoja-Enríquez, J. [Centro de Investigación y Desarrollo Tecnológico en Energías Renovables, UNICACH, Libramiento Norte No 1150, Tuxtla Gutiérrez, Chiapas 29039 (Mexico); Escobar-Morales, B. [Instituto Tecnológico de Cancún, Avenida Kábah Km 3, Cancún, Quintana Roo 77500 (Mexico); Martinez-Hernández, D.; Díaz-Flores, L.L.; Ricardez-Jiménez, C. [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Mathews, N.R.; Mathew, X. [Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos 62580 (Mexico)

    2013-05-01

    Cadmium sulfide thin-films were deposited on glass slides and SnO{sub 2}:F coated glass substrates by chemical bath deposition, sputtering and close-spaced sublimation techniques. The films were studied for the structural and opto-electronic properties after annealing in an ambient identical to that employed in the fabrication of CdTe/CdS devices. Quantum efficiency of the CdTe/CdS solar cells fabricated with CdS buffer films prepared by the three methods were investigated to understand the role of CdS film preparation method on the blue response of the devices. The higher blue response observed for the devices fabricated with chemical bath deposited CdS film is discussed. - Highlights: ► CdS films were prepared by different techniques. ► Role of CdS on the blue response of device was studied. ► Structural and optical properties of CdS were analyzed. ► Chemically deposited CdS has high blue transmittance. ► CdS deposition method influences diffusion of S and Te.

  15. Synthesis of carbon nanotubes using the cobalt nanocatalyst by thermal chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Madani, S.S. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Zare, K. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Department of Chemistry, Shahid Beheshti University, Tehran (Iran, Islamic Republic of); Ghoranneviss, M. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Salar Elahi, A., E-mail: Salari_phy@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2015-11-05

    The three main synthesis methods of Carbon nanotubes (CNTs) are the arc discharge, the laser ablation and the chemical vapour deposition (CVD) with a special regard to the latter one. CNTs were produced on a silicon wafer by Thermal Chemical Vapor Deposition (TCVD) using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX) measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM) was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM) to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs. The ideal reaction temperature was 850 °C and the deposition time was 15 min. - Graphical abstract: FESEM images of CNTs grown on the cobalt catalyst at growth temperatures of (a) 850 °C, (b) 900 °C, (c) 950 °C and (d) 1000 °C during the deposition time of 15 min. - Highlights: • Carbon nanotubes (CNTs) were produced on a silicon wafer by TCVD technique. • EDX and AFM were used to investigate the elemental composition and surface topography. • FESEM was used to study the morphological properties of CNTs. • The grown CNTs have been investigated by HRTEM and Raman spectroscopy.

  16. Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD

    Science.gov (United States)

    Kakkerla, Ramesh Kumar; Anandan, Deepak; Hsiao, Chih-Jen; Yu, Hung Wei; Singh, Sankalp Kumar; Chang, Edward Yi

    2018-05-01

    We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs) is investigated. Control over diameter and length of the InAs NWs and the GaSb shell thickness was achieved by using growth temperature. As the GaSb growth temperature increase, GaSb radial growth rate increases due to the increase in alkyl decomposition at the substrate surface. Diffusivity of the adatoms increases as the GaSb growth temperature increase which results in tapered GaSb shell growth. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed that the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core can be controlled by the growth temperature. This study demonstrates the control over InAs NWs growth and the GaSb shell thickness can be achieved through proper growth temperature control, such technique is essential for the growth of nanowire for future nano electronic devices, such as Tunnel FET.

  17. Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing

    International Nuclear Information System (INIS)

    Hong-Bo, Liu; Ling-Juan, Zhao; Jiao-Qing, Pan; Hong-Liang, Zhu; Fan, Zhou; Bao-Jun, Wang; Wei, Wang

    2008-01-01

    We present the monolithic integration of a sampled-grating distributed Bragg reflector (SG-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55mbar) selective-area-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI) for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current Ith = 62 mA, and output power reaches 3.6mW. The wavelength tuning range covers 30nm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14 dB with bias of -5 V

  18. Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

    International Nuclear Information System (INIS)

    Takeuchi, S.; Asazu, H.; Nakamura, Y.; Sakai, A.; Imanishi, M.; Imade, M.; Mori, Y.

    2015-01-01

    We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron microscopy (TEM) clearly revealed detailed interface structures and dislocation behaviors that reduced the density of vertically aligned dislocations threading to the Na flux GaN surface. Submicron-scale voids were formed at the interface above the dislocations with a c component in MOCVD-GaN, while no such voids were formed above the a-type dislocations. The penetration of the dislocations with a c component into Na flux GaN was, in most cases, effectively blocked by the presence of the voids. Although some dislocations with a c component in the MOCVD-GaN penetrated into the Na flux GaN, their propagation direction changed laterally through the voids. On the other hand, the a-type dislocations propagated laterally and collectively near the interface, when these dislocations in the MOCVD-GaN penetrated into the Na flux GaN. These results indicated that the dislocation propagation behavior was highly sensitive to the type of dislocation, but all types of dislocations were confined to within several micrometers region of the Na flux GaN from the interface. The cause of void formation, the role of voids in controlling the dislocation behavior, and the mechanism of lateral and collective dislocation propagation are discussed on the basis of TEM results

  19. P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Y.J.; Chia, C.K.; Liu, H.F.; Wong, L.M.; Chai, J.W.; Chi, D.Z.; Wang, S.J., E-mail: sj-wang@imre.a-star.edu.sg

    2016-07-15

    Highlights: • The heterogeneous integration of p-Ge/GaAs by MOCVD indicates significance for the application in optoelectronic devices such as p-MOSFET, dual band photodetector, etc. • Many undesired pillar-structures were observed on the p-Ge epilayers and we found that the cause of the pillar-like structures was related to the Ge-Ga dimers formed during the growth. • We found that a GaAs substrate with fewer Ga or Ge danglings was helpful in suppressing the formation of the unwanted pillar-like structures and thus obtaining high quality p-Ge epilayers. - Abstract: In this work, Ga-doped Geranium (Ge) films have been grown on GaAs (100) substrates by metal-organic chemical vapor deposition (MOCVD). Undesired pillar structures have been observed on the epilayers prepared at relatively lower temperatures. Energy dispersive X-ray spectroscopy (EDX) indicated that the pillars are mainly consisted of Ga atoms, which is totally different from that of the Ge film. It was demonstrated that the pillar structures could be reduced by simply raising the growth temperature while keeping the other growth conditions unchanged. In this regard, the growth mechanism of the pillars was related to the Ge-Ga dimers formed during the growth of p-Ge films. By further studying the influence of a GaAs or Ge buffer layer on the growth of p-Ge layers, we found that the GaAs substrate with lower density of Ga or Ge dangling bonds was helpful in suppressing the formation of the undesired pillar structures.

  20. Characterization of defects in hydrogenated amorphous silicon deposited on different substrates by capacitance techniques

    International Nuclear Information System (INIS)

    Darwich, R.; Roca i Cabarrocas, P.

    2011-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films deposited on crystalline silicon and Corning glass substrate were analyzed using different capacitance techniques. The distribution of localized states and some electronic properties were studied using the temperature, frequency and bias dependence of the Schottky barrier capacitance and deep level transient spectroscopy. Our results show that the distribution of the gap states depends on the type of substrate. We have found that the films deposited on c-Si substrate represent only one positively charged or prerelaxed neutral deep state and one interface state, while the films deposited on glass substrate have one interface state and three types of deep defect states, positively or prerelaxed neutral, neutral and negatively charged.

  1. Deposition of porous cathodes using plasma spray technique for reduced-temperature SOFCs

    Energy Technology Data Exchange (ETDEWEB)

    Jankovic, J.; Hui, S.; Roller, J.; Kesler, O.; Xie, Y.; Maric, R.; Ghosh, D. [National Research Council of Canada, Vancouver, BC (Canada). Inst. for Fuel Cell Innovation

    2005-07-01

    Current techniques for Solid Oxide Fuel Cell (SOFC) materials deposition are often expensive and time-consuming. Plasma-spraying techniques provide higher deposition rates, short processing times and control over porosity and composition during deposition. Optimum plasma spraying for lanthanum based cathode materials were discussed. Plasma-spraying was used to deposit cathode materials onto ceramic and stainless steel substrates to obtain highly porous structures. Lanthanum cathode materials with composition of La{sub 0.6}Sr{sub 0.4}C{sub 0.2}Fe{sub 0.8}O{sub 3} were employed in the powder form. The powder was prepared from powder precursors with different power formers and binder levels, or from produced single-phase lanthanum powders. The (La{sub 0.8}Sr{sub 0.2}){sub 0.98}MnO{sub 3} cathode material was also processed for comparison purposes. The deposition process was developed to obtain coatings with good bond strength, porosity, film thickness and residual stresses. The phase and microstructure of deposited materials were characterized using X-Ray Diffraction and Scanning Electron Microscopy (SEM). It was concluded that good flow of the powder precursors is achieved by spraying 50-100 um particle size powders and using vibrating feeders. Further processing of the spraying powders was recommended. It was noted that oxide precursors showed greater reactivity among the precursors. The best precursor reactivity and coating morphology was obtained using 40 volume per cent of graphite pore former, incorporated into the precursor mixture during wet ball milling. It was concluded that higher power levels and larger distances between the plasma gun and the substrate result in coatings with the highest porosities and best phase compositions. 5 refs., 1 tab., 6 figs.

  2. Tailoring properties of lossy-mode resonance optical fiber sensors with atomic layer deposition technique

    Science.gov (United States)

    Kosiel, Kamil; Koba, Marcin; Masiewicz, Marcin; Śmietana, Mateusz

    2018-06-01

    The paper shows application of atomic layer deposition (ALD) technique as a tool for tailoring sensorial properties of lossy-mode-resonance (LMR)-based optical fiber sensors. Hafnium dioxide (HfO2), zirconium dioxide (ZrO2), and tantalum oxide (TaxOy), as high-refractive-index dielectrics that are particularly convenient for LMR-sensor fabrication, were deposited by low-temperature (100 °C) ALD ensuring safe conditions for thermally vulnerable fibers. Applicability of HfO2 and ZrO2 overlays, deposited with ALD-related atomic level thickness accuracy for fabrication of LMR-sensors with controlled sensorial properties was presented. Additionally, for the first time according to our best knowledge, the double-layer overlay composed of two different materials - silicon nitride (SixNy) and TaxOy - is presented for the LMR fiber sensors. The thin films of such overlay were deposited by two different techniques - PECVD (the SixNy) and ALD (the TaxOy). Such approach ensures fast overlay fabrication and at the same time facility for resonant wavelength tuning, yielding devices with satisfactory sensorial properties.

  3. An evaluation of absorption spectroscopy to monitor YBa2Cu3O7-x precursors for metal organics chemical vapor deposition processing

    International Nuclear Information System (INIS)

    Matthew Edward Thomas

    1999-01-01

    Absorption spectroscopy was evaluated as a technique to monitor the metal organics chemical vapor deposition (MOCVD) process for forming YBa 2 Cu 3 O 7-x superconducting coated conductors. Specifically, this study analyzed the feasibility of using absorption spectroscopy to monitor the MOCVD supply vapor concentrations of the organic ligand 2,2,6,6-tetramethyl-3,5-heptanedionate (TMHD) metal chelates of barium, copper, and yttrium. Ba(TMHD) 2 , Cu(TMHD) 2 , and Y(TMHD) 3 compounds have successfully been vaporized in the MOCVD processing technique to form high temperature superconducting ''coated conductors,'' a promising technology for wire fabrication. The absorption study of the barium, copper, and yttrium (TMHD) precursors was conducted in the ultraviolet wavelength region from 200nm to 400nm. To simulate the MOCVD precursor flows the Ba(TMHD) 2 , Cu(TMHD) 2 , and Y(TMHD) 3 complexes were vaporized at vacuum pressures of (0.03--10)Torr. Spectral absorption scans of each precursor were conducted to examine potential measurement wavelengths for determining vapor concentrations of each precursor via Beer's law. The experimental results show that under vacuum conditions the barium, copper, and yttrium (TMHD) precursors begin to vaporize between 90 C and 135 C, which are considerably lower vaporization temperatures than atmospheric thermal gravimetric analyses indicate. Additionally, complete vaporization of the copper and yttrium (TMHD) precursors occurred during rapid heating at temperatures between 145 C and 195 C and after heating at constant temperatures between 90 C and 125 C for approximately one hour, whereas the Ba(TMHD) 2 precursor did not completely vaporize. At constant temperatures, near constant vaporization levels for each precursor were observed for extended periods of time. Detailed spectroscopic scans at stable vaporization conditions were conducted

  4. The Influence of Various Deposition Techniques on the Photoelectrochemical Properties of the Titanium Dioxide Thin Fil

    Czech Academy of Sciences Publication Activity Database

    Morozová, Magdalena; Klusoň, Petr; Dzik, P.; Veselý, M.; Baudyš, M.; Krýsa, J.; Šolcová, Olga

    2013-01-01

    Roč. 65, č. 3 (2013), s. 452-458 ISSN 0928-0707 R&D Projects: GA TA ČR TA01020804 Grant - others:GA ČR(CZ) GP104/09/P165 Institutional support: RVO:67985858 Keywords : titanium dioxide * photoelectrochemical properties * deposition techniques Subject RIV: CI - Industrial Chemistry, Chemical Engineering Impact factor: 1.547, year: 2013

  5. The influence of inhalation technique on Technegas particle deposition and image appearance in normal volunteers

    International Nuclear Information System (INIS)

    Lloyd, J.J.; James, J.M.; Shields, R.A.; Testa, H.J.

    1994-01-01

    The aim of this work was to investigate the influence of inhalation technique on Technegas image quality and on fractional particle deposition. This was investigated in six normal volunteers using three different types of breathing pattern. Fractional deposition was determined by analysis of dynamic gamma camera images acquired during Technegas administration. Static lung images were subsequently acquired and assessed independently by three experienced observers. High-quality images were obtained in all cases although slight differences were noted. The images produced using a slow deep inspiration with a breath hold (i.e. the standard method) were of more uniform texture and also had the least gradient in activity from apex to base. The converse was true for a rapid inhalation technique. The average fractional deposition per breath was 55%, but this varied between individuals and with breathing pattern, being most influenced by the total duration of a breath. We conclude that for patient studies the standard inhalation technique is best, although variation to suit individual patients would be acceptable. (orig./MG)

  6. Synthesis of Colloidal ZnO Nanoparticles and Deposit of Thin Films by Spin Coating Technique

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2013-01-01

    Full Text Available ZnO colloidal nanoparticles were synthesized, the average size of these nanoparticles is around 25 nm with hexagonal form. It was noted that stabilization depends directly on the purifying process; in this work we do not change the nature of the solution as a difference from Meulekamp's method, and we do not use any alkanes to remove the byproducts; only a centrifuge to remove those ones was used, thereby the stabilization increases up to 24 days. It is observed from the results that only three times of washing is enough to prevent the rapid aging process. The effect of annealing process on the composition, size, and geometrical shape of ZnO nanoparticles was studied in order to know whether the annealing process affects the crystallization and growth of the nanoparticles. After the synthesis, the colloidal nanoparticles were deposited by spin coating technique showing that the formed nanoparticles have no uniformly deposition pattern. But is possible to deposit those ones in glass substrates. A possible deposition process of the nanoparticles is proposed.

  7. Effect of the spray application technique on the deposition of entomopathogenic nematodes in vegetables.

    Science.gov (United States)

    Brusselman, Eva; Beck, Bert; Pollet, Sabien; Temmerman, Femke; Spanoghe, Pieter; Moens, Maurice; Nuyttens, David

    2012-03-01

    The present study compared entomopathogenic nematode delivery at the base of savoy cabbage and cauliflower, at the lower side of savoy cabbage and cauliflower leaves and in leek stems and the ground deposition using a five-nozzle spray boom equipped with an ISO 08 flat fan, an air induction flat fan and Twinjet spray nozzles. Additionally, an air support system and a row application system were evaluated. Approximately 40% of the applied nematodes did not reach the foot of the cabbage plants. The use of an air support system or a row application system improved nematode deposition at the savoy cabbage base. Relative nematode deposition on the lower side of savoy cabbage leaves was 27.20%, while only 2.64% of the applied nematodes reached the lower side of cauliflower leaves. After spraying leek with a standard boom, a low relative nematode deposition (26.64%) was measured in the leek stem. Nozzle type affected the distribution of nematodes in droplet spots. Nozzle type has a minor effect on the number of entomopathogenic nematodes delivered on difficult-to-reach targets. The use of modified spray application techniques directing the spray to the target site are necessary to increase the chances of contact of entomopathogenic nematodes with their target. Copyright © 2011 Society of Chemical Industry.

  8. Effect of spray application technique on spray deposition in greenhouse strawberries and tomatoes.

    Science.gov (United States)

    Braekman, Pascal; Foque, Dieter; Messens, Winy; Van Labeke, Marie-Christine; Pieters, Jan G; Nuyttens, David

    2010-02-01

    Increasingly, Flemish greenhouse growers are using spray booms instead of spray guns to apply plant protection products. Although the advantages of spray booms are well known, growers still have many questions concerning nozzle choice and settings. Spray deposition using a vertical spray boom in tomatoes and strawberries was compared with reference spray equipment. Five different settings of nozzle type, size and pressure were tested with the spray boom. In general, the standard vertical spray boom performed better than the reference spray equipment in strawberries (spray gun) and in tomatoes (air-assisted sprayer). Nozzle type and settings significantly affected spray deposition and crop penetration. Highest overall deposits in strawberries were achieved using air-inclusion or extended-range nozzles. In tomatoes, the extended-range nozzles and the twin air-inclusion nozzles performed best. Using smaller-size extended-range nozzles above the recommended pressure range resulted in lower deposits, especially inside the crop canopy. The use of a vertical spray boom is a promising technique for applying plant protection products in a safe and efficient way in tomatoes and strawberries, and nozzle choice and setting should be carefully considered.

  9. Modelling of MOCVD reactor: new 3D approach

    International Nuclear Information System (INIS)

    Raj, E; Lisik, Z; Niedzielski, P; Ruta, L; Turczynski, M; Wang, X; Waag, A

    2014-01-01

    The paper presents comparison of two different 3D models of vertical, rotating disc MOCVD reactor used for 3D GaN structure growth. The first one is based on the reactor symmetry, while the second, novel one incorporates only single line of showerhead nozzles. It is shown that both of them can be applied interchangeably regarding the phenomena taking place within the processing area. Moreover, the importance of boundary conditions regarding proper modelling of showerhead cooling and the significance of thermal radiation on temperature field within the modelled structure are presented and analysed. The last phenomenon is erroneously neglected in most of the hitherto studies.

  10. Modelling of MOCVD Reactor: New 3D Approach

    Science.gov (United States)

    Raj, E.; Lisik, Z.; Niedzielski, P.; Ruta, L.; Turczynski, M.; Wang, X.; Waag, A.

    2014-04-01

    The paper presents comparison of two different 3D models of vertical, rotating disc MOCVD reactor used for 3D GaN structure growth. The first one is based on the reactor symmetry, while the second, novel one incorporates only single line of showerhead nozzles. It is shown that both of them can be applied interchangeably regarding the phenomena taking place within the processing area. Moreover, the importance of boundary conditions regarding proper modelling of showerhead cooling and the significance of thermal radiation on temperature field within the modelled structure are presented and analysed. The last phenomenon is erroneously neglected in most of the hitherto studies.

  11. Microstructural and compositional analysis of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} films grown by MOCVD before and after GCIB smoothing

    Energy Technology Data Exchange (ETDEWEB)

    Hatzistergos, M.S.; Efstathiadis, H.; Reeves, J.L.; Selvamanickam, V.; Allen, L.P.; Lifshin, E.; Haldar, P

    2004-06-15

    The microstructural and compositional evolution of thick (>1 {mu}m) high temperature superconducting YBa{sub 2}Cu{sub 3}O{sub 7-x} (YBCO) films grown on single crystal SrTiO{sub 3} substrates by the metal organic chemical vapor deposition (MOCVD) process was investigated by focused ion beam microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and atomic force microscopy. This study showed that as the MOCVD YBCO film thickness increased above 0.5 {mu}m, defects such as second phase particles, pores, and misaligned grains preferentially nucleated and grew at the YBCO surface. A portion of this defective top layer was eliminated from all the samples using a gas cluster ion beam (GCIB) process that first removed material with a focused argon cluster beam. Next, an oxygen cluster beam was used to smooth the surface and re-oxygenate the YBCO. Comparing the critical current (I{sub c}) measured before and after GCIB processing showed that the I{sub c} remained the same, and even improved, when part of the defective top layer was removed. This microstructural and electromagnetic 'dead layer' is believed to be responsible for the overall I{sub c} decrease of MOCVD YBCO films thicker than 0.5 {mu}m.

  12. Microstructural and compositional analysis of YBa2Cu3O7-δ films grown by MOCVD before and after GCIB smoothing

    International Nuclear Information System (INIS)

    Hatzistergos, M.S.; Efstathiadis, H.; Reeves, J.L.; Selvamanickam, V.; Allen, L.P.; Lifshin, E.; Haldar, P.

    2004-01-01

    The microstructural and compositional evolution of thick (>1 μm) high temperature superconducting YBa 2 Cu 3 O 7-x (YBCO) films grown on single crystal SrTiO 3 substrates by the metal organic chemical vapor deposition (MOCVD) process was investigated by focused ion beam microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and atomic force microscopy. This study showed that as the MOCVD YBCO film thickness increased above 0.5 μm, defects such as second phase particles, pores, and misaligned grains preferentially nucleated and grew at the YBCO surface. A portion of this defective top layer was eliminated from all the samples using a gas cluster ion beam (GCIB) process that first removed material with a focused argon cluster beam. Next, an oxygen cluster beam was used to smooth the surface and re-oxygenate the YBCO. Comparing the critical current (I c ) measured before and after GCIB processing showed that the I c remained the same, and even improved, when part of the defective top layer was removed. This microstructural and electromagnetic 'dead layer' is believed to be responsible for the overall I c decrease of MOCVD YBCO films thicker than 0.5 μm

  13. The effect of thermal history on microstructure of Er_2O_3 coating layer prepared by MOCVD process

    International Nuclear Information System (INIS)

    Tanaka, Masaki; Takezawa, Makoto; Hishinuma, Yoshimitsu; Tanaka, Teruya; Muroga, Takeo; Ikeno, Susumu; Lee, Seungwon; Matsuda, Kenji

    2016-01-01

    Er_2O_3 is a high potential candidate material for tritium permeation barrier and electrical insulator coating for advanced breeding blanket systems with liquid metal or molten-salt types. Recently, Hishinuma et al. reported to form homogeneous Er_2O_3 coating layer on the inner surface of metal pipe using Metal Organic Chemical Vapor Deposition (MOCVD) process. In this study, the influence of thermal history on microstructure of Er_2O_3 coating layer on stainless steel 316 (SUS 316) substrate by MOCVD process was investigated using SEM, TEM and XRD. The ring and net shape selected-area electron diffraction (SAED) patterns of Er_2O_3 coating were obtained each SUS substrates, revealed that homogeneous Er_2O_3 coating had been formed on SUS substrate diffraction patterns. Close inspection of SEM images of the surface on the Er_2O_3 coating before and after thermal cycling up to 700degC in argon atmosphere, it is confirmed that the Er_2O_3 particles were refined by thermal history. The column-like Er_2O_3 grains were promoted to change to granular structure by thermal history. >From the cross-sectional plane of TEM observations, the formation of interlayer between Er_2O_3 coating and SUS substrate was also confirmed. (author)

  14. Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

    Science.gov (United States)

    Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

    2016-09-01

    In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor /acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

  15. Metallographic techniques for evaluation of Thermal Barrier Coatings produced by Electron Beam Physical Vapor Deposition

    International Nuclear Information System (INIS)

    Kelly, Matthew; Singh, Jogender; Todd, Judith; Copley, Steven; Wolfe, Douglas

    2008-01-01

    Thermal Barrier Coatings (TBC) produced by Electron Beam Physical Vapor Deposition (EB-PVD) are primarily applied to critical hot section turbine components. EB-PVD TBC for turbine applications exhibit a complicated structure of porous ceramic columns separated by voids that offers mechanical compliance. Currently there are no standard evaluation methods for evaluating EB-PVD TBC structure quantitatively. This paper proposes a metallographic method for preparing samples and evaluating techniques to quantitatively measure structure. TBC samples were produced and evaluated with the proposed metallographic technique and digital image analysis for columnar grain size and relative intercolumnar porosity. Incorporation of the proposed evaluation technique will increase knowledge of the relation between processing parameters and material properties by incorporating a structural link. Application of this evaluation method will directly benefit areas of quality control, microstructural model development, and reduced development time for process scaling

  16. Modulating the Optoelectronic Properties of Silver Nanowires Films: Effect of Capping Agent and Deposition Technique.

    Science.gov (United States)

    Lopez-Diaz, D; Merino, C; Velázquez, M M

    2015-11-11

    Silver nanowires 90 nm in diameter and 9 µm in length have been synthesized using different capping agents: polyvinyl pyrrolidone (PVP) and alkyl thiol of different chain lengths. The nanowire structure is not influenced by the displacement of PVP by alkyl thiols, although alkyl thiols modify the lateral aggregation of nanowires. We examined the effect of the capping agent and the deposition method on the optical and electrical properties of films prepared by Spray and the Langmuir-Schaefer methodologies. Our results revealed that nanowires capped with PVP and C8-thiol present the best optoelectronic properties. By using different deposition techniques and by modifying the nanowire surface density, we can modulate the optoelectronic properties of films. This strategy allows obtaining films with the optoelectronic properties required to manufacture touch screens and electromagnetic shielding.

  17. Modulating the Optoelectronic Properties of Silver Nanowires Films: Effect of Capping Agent and Deposition Technique

    Directory of Open Access Journals (Sweden)

    D. Lopez-Diaz

    2015-11-01

    Full Text Available Silver nanowires 90 nm in diameter and 9 µm in length have been synthesized using different capping agents: polyvinyl pyrrolidone (PVP and alkyl thiol of different chain lengths. The nanowire structure is not influenced by the displacement of PVP by alkyl thiols, although alkyl thiols modify the lateral aggregation of nanowires. We examined the effect of the capping agent and the deposition method on the optical and electrical properties of films prepared by Spray and the Langmuir-Schaefer methodologies. Our results revealed that nanowires capped with PVP and C8-thiol present the best optoelectronic properties. By using different deposition techniques and by modifying the nanowire surface density, we can modulate the optoelectronic properties of films. This strategy allows obtaining films with the optoelectronic properties required to manufacture touch screens and electromagnetic shielding.

  18. Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

    Energy Technology Data Exchange (ETDEWEB)

    Zaleta-Alejandre, E.; Balderas-Xicoténcatl, R. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Arrieta, M.L. Pérez [Universidad Autónoma de Zacatecas, Unidad Académica de Física, Calzada Solidaridad esq. Paseo, La Bufa s/n, C.P. 98060, Zacatecas, México (Mexico); Meza-Rocha, A.N.; Rivera-Álvarez, Z. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Falcony, C., E-mail: cfalcony@fis.cinvestav.mx [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico)

    2013-10-01

    Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min{sup −1} at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min{sup −1} were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s.

  19. Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

    International Nuclear Information System (INIS)

    Zaleta-Alejandre, E.; Balderas-Xicoténcatl, R.; Arrieta, M.L. Pérez; Meza-Rocha, A.N.; Rivera-Álvarez, Z.; Falcony, C.

    2013-01-01

    Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min −1 at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min −1 were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s

  20. Microstructure Characteristics of High Lift Factor MOCVD REBCO Coated Conductors With High Zr Content

    Energy Technology Data Exchange (ETDEWEB)

    Galstyan, E; Gharahcheshmeh, MH; Delgado, L; Xu, AX; Majkic, G; Selvamanickam, V

    2015-06-01

    We report the microstructural characteristics of high levels of Zr-added REBa2Cu3O7-x (RE = Gd, Y rare earth) coated conductors fabricated by Metal Organic Chemical Vapor Deposition (MOCVD). The enhancements of the lift factor defined as a ratio of the in-field (3 T, B parallel to c-axis) critical current density (J(c)) at 30 K and self-field J(c) at 77 K have been achieved for Zr addition levels of 20 and 25 mol% via optimization of deposition parameters. The presence of strong flux pinning is attributed to the aligned nanocolumns of BaZrO3 and nanoprecipitates embedded in REBa2Cu3O7-x matrix with good crystal quality. A high density of BZO nanorods with a typical size 6-8 nm and spacing of 20 nm has been observed. Moreover, the high Zr content was found to induce a high density of intrinsic defects, including stacking faults and dislocations. The correlation between in-field performance along the c-axis and microstructure of (Gd, Y) BCO film with a high level of Zr addition is discussed.

  1. Determination of Redistribution of Erosion/Deposition Rate in Cultivated Area Using 137Cs Technique

    International Nuclear Information System (INIS)

    Nita Suhartini; Syamsul Abbas RAS; Barokah A; Ali Arman L

    2004-01-01

    The aim of the research is to determine the rate of redistribution of erosion/deposition in cultivated area. The application of 137 Cs technique was carried out at cultivated area in Bojong - Ciawi, with slope less than 10 o and slope length of about 2 km. A reference site was selected at the top of the slope, and this site is flat, open and covered with grass. Two sites in the cultivated area were selected as study site namely LU-I ( 15 x 25 ) m with the distance of 1000 m from the top, and LU-II (17.5 x 20) m with the distance of 1300 m from the top. Sampling of soil at reference site was done by using scraper (20 x 50) cm, while sampling at study site by using core sampling (di = 7 cm). Soil samples were brought to the laboratorium for preparation and analysis of 137 Cs content. Preparation are including of drying, weighing the total dry, sieving and crushing. Analysis of 137 Cs content was done using multi channel analyzer (MCA) that connected to high purity germanium (HPGe), at 661 keV, and the minimum counting time of 16 hours. To estimate the erosion/deposit rate, two mathematical model were used, namely Proportional Model (PM) and Mass Balance Model 1 (MBM1). The result for application of 137 Cs technique showed that MBM1 gives somewhat higher value for deposit rate and somewhat lower value for erosion than PM. Land use - I (LU-I) of Bojong - Ciawi was suffering from erosion with the erosion rate from 1 t/(ha.y) to 13 t/(ha.y), and LU-II has deposit rate from 1 t/(ha.y) to 50 t/(ha.y). (author)

  2. Nanocomposite metal amorphous-carbon thin films deposited by hybrid PVD and PECVD technique.

    Science.gov (United States)

    Teixeira, V; Soares, P; Martins, A J; Carneiro, J; Cerqueira, F

    2009-07-01

    Carbon based films can combine the properties of solid lubricating graphite structure and hard diamond crystal structure, i.e., high hardness, chemical inertness, high thermal conductivity and optical transparency without the crystalline structure of diamond. Issues of fundamental importance associated with nanocarbon coatings are reducing stress, improving adhesion and compatibility with substrates. In this work new nanocomposite coatings with improved toughness based in nanocrystalline phases of metals and ceramics embedded in amorphous carbon matrix are being developed within the frame of a research project: nc-MeNxCy/a-C(Me) with Me = Mo, Si, Al, Ti, etc. Carbide forming metal/carbon (Me/C) composite films with Me = Mo, W or Ti possess appropriate properties to overcome the limitation of pure DLC films. These novel coating architectures will be adopted with the objective to decrease residual stress, improve adherence and fracture toughness, obtain low friction coefficient and high wear-resistance. Nanocomposite DLC's films were deposited by hybrid technique using a PVD-Physically Vapor Deposition (magnetron sputtering) and Plasma Enhanced Chemical Vapor Deposition (PECVD), by the use of CH4 gas. The parameters varied were: deposition time, substrate temperature (180 degrees C) and dopant (Si + Mo) of the amorphous carbon matrix. All the depositions were made on silicon wafers and steel substrates precoated with a silicon inter-layer. The characterisation of the film's physico-mechanical properties will be presented in order to understand the influence of the deposition parameters and metal content used within the a-C matrix in the thin film properties. Film microstructure and film hybridization state was characterized by Raman Spectroscopy. In order to characterize morphology SEM and AFM will be used. Film composition was measured by Energy-Dispersive X-ray analysis (EDS) and by X-ray photoelectron spectroscopy (XPS). The contact angle for the produced DLC's on

  3. Contribution towards ALD and MOCVD of rare earth oxides and hafnium oxide. From precursor evaluation to process development and thin film characterization

    International Nuclear Information System (INIS)

    Xu, Ke

    2013-01-01

    This PhD thesis is consisted of two major parts: precursor development for ALD and MOCVD applications as well as thin film deposition using ALD and MOCVD with self developed precursors. The first part of this work presents the synthesis, characterization and detailed thermal property investigations of different novel group IV and rare earth precursor classes (guandinate, guanidine and ketoiminate). The second part of this work presents the ALD and MOCVD depositions using various guanidinate precursors for forming corresponding metal oxide thin films. The overall motivation of this work is to fulfill the lack of precursors of rare earth and group IV elements for ALD and MOCVD applications that satisfy the stringent requirements for the modern microelectronic and optoelectronic technologies. The aspect of the precursor engineering part is focusing on influence of ligand sphere on precursors' chemical and thermal properties. In this way, we successfully introduced guanidine and ketoiminate as potential ligands for the precursor design. The thin film deposition part of this work is ALD of rare earth oxides and group IV oxides employing literature known compounds which were previously developed in our research group. The main focus was dedicated to the process optimization, the characterization of the structural, morphological, compositional and functional properties of the deposited thin films. Certain film properties were discussed comparatively with the corresponding thin films deposited with literature known precursors. It was already shortly demonstrated in Chapter 6 that the guanidine ligand showed potential interest as suitable ligand for precursor engineering. This titan guanidine precursor [Ti(NC(NMe 2 ) 2 ) 4 ] (GD1) possesses higher thermal stability compared to its parent amide, [Ti(NMe 2 ) 4 ], while reactivity against water is not significantly affected. It could be very interesting to transfer this ligand for the precursor development of rare earth

  4. Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

    KAUST Repository

    Alshehri, Bandar

    2016-06-07

    In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

  5. Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

    KAUST Repository

    Alshehri, Bandar; Dogheche, Karim; Belahsene, Sofiane; Janjua, Bilal; Ramdane, Abderrahim; Patriarche, Gilles; Ng, Tien Khee; S-Ooi, Boon; Decoster, Didier; Dogheche, Elhadj

    2016-01-01

    In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

  6. Surface characterization of III-V MOCVD films from heterocyclic single-source precursors; Oberflaechencharakterisierung von III-V MOCVD-Filmen aus heterozyklischen Single Source Precursoren

    Energy Technology Data Exchange (ETDEWEB)

    Seemayer, Andreas

    2009-07-13

    In the present thesis the sublimation and evaporation properties of heterocyclic gallium and antimony containing single-source precursors as well as the chemical composition and morphology of the films fabricated from this were studied. The single-source precursors available by a new synthesis route were characterized concerning their evaporation properties and the obtained films studied surface-physically. By this way the process parameters were optimized and the applicability of the single-source precursors in HV-MOCVD processes studied. By evaporation experiments in the UHV it could be shown that thereby lighter ligands like ethyl- and methyl-groups lead to a lower contamination of the reaction space with carbon containing molecules. Furthermore it was expected that the 6-rings synthetized with short ligands exhibit a high stability. This however could not be confirmed. By unwanted parasitary reactions in the gaseous phase respectively dissociative sublimation in the gaseous phase a deposition of GaSb with these precursors was not possible. The 4-ring stabilized with tertiary-butyl and ethyl-groups caused in the evaporation the largest contamination of the gaseous phase, becauselonger-chain hydrocarbons exhibil only a bad pump cross section. By parasitary reactions originating elementary antimony is detectable in the gaseous phase. The films were studied concerning their chemical composition and their transport- respectively storage-conditioned surface contamination. Furthermore it has become clear that not only a purely synthetized precursor substance but also the reactor design is deciding for a successful deposition and a high film quality. First by successive optimization of the evaporation geometry it was possible to reduce the roughness of the produced GaSb films down to about 10 nm-30 nm.

  7. Synthesis of nanostructured SiC using the pulsed laser deposition technique

    International Nuclear Information System (INIS)

    Zhang, H.X.; Feng, P.X.; Makarov, V.; Weiner, B.R.; Morell, G.

    2009-01-01

    We report the new results on the direct synthesis of nanostructured silicon carbide (SiC) materials using the pulsed laser deposition technique. Scanning electron microscopy images revealed that SiC nanoholes, nanosprouts, nanowires, and nanoneedles were obtained. The crystallographic structure, chemical composition, and bond structure of the nanoscale SiC materials were investigated using X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering spectroscopy. The transverse optical mode and longitudinal optical mode in Raman spectra were found to become sharper as the substrate temperature was increased, while the material structure evolved from amorphous to crystalline

  8. Site control technique for quantum dots using electron beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-saitama, Saitama 3458501 (Japan)

    2014-05-15

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

  9. Site control technique for quantum dots using electron beam induced deposition

    International Nuclear Information System (INIS)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi

    2014-01-01

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement

  10. ZnO nanowall network grown by chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mukherjee, Amrita, E-mail: but.then.perhaps@gmail.com; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

    2015-06-24

    Network of wedge shaped ZnO nanowalls are grown on c-sapphire by Chemical Vapor Deposition (CVD) technique. Structural studies using x-ray diffraction show much better crystallinity in the nanowall sample as compared to the continuous film. Moreover, the defect related broad green luminescence is found to be suppressed in the nanowall sample. The low temperature photoluminescence study also suggests the quantum confinement of carriers in nanowall sample. Electrical studies performed on the nanowalls show higher conductivity, which has been explained in terms of the reduction of scattering cross-section as a result of 1D quantum confinement of carriers on the tip of the nanowalls.

  11. Microstructure and surface morphology of YSZ thin films deposited by e-beam technique

    International Nuclear Information System (INIS)

    Laukaitis, G.; Dudonis, J.; Milcius, D.

    2008-01-01

    In present study yttrium-stabilized zirconia (YSZ) thin films were deposited on optical quartz (amorphous SiO 2 ), porous Ni-YSZ and crystalline Alloy 600 (Fe-Ni-Cr) substrates using e-beam deposition technique and controlling technological parameters: substrate temperature and electron gun power which influence thin-film deposition mechanism. X-ray diffraction, scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to investigate how thin-film structure and surface morphology depend on these parameters. It was found that the crystallite size, roughness and growth mechanism of YSZ thin films are influenced by electron gun power. To clarify the experimental results, YSZ thin-film formation as well evolution of surface roughness at its initial growing stages were analyzed. The evolution of surface roughness could be explained by the processes of surface mobility of adatoms and coalescence of islands. The analysis of these experimental results explain that surface roughness dependence on substrate temperature and electron gun power non-monotonous which could result from diffusivity of adatoms and the amount of atomic clusters in the gas stream of evaporated material

  12. Enhanced surface functionality via plasma modification and plasma deposition techniques to create more biologically relevant materials

    Science.gov (United States)

    Shearer, Jeffrey C.

    Functionalizing nanoparticles and other unusually shaped substrates to create more biologically relevant materials has become central to a wide range of research programs. One of the primary challenges in this field is creating highly functionalized surfaces without modifying the underlying bulk material. Traditional wet chemistry techniques utilize thin film depositions to functionalize nanomaterials with oxygen and nitrogen containing functional groups, such as --OH and --NHx. These functional groups can serve to create surfaces that are amenable to cell adhesion or can act as reactive groups for further attachment of larger structures, such as macromolecules or antiviral agents. Additional layers, such as SiO2, are often added between the nanomaterial and the functionalized coating to act as a barrier films, adhesion layers, and to increase overall hydrophilicity. However, some wet chemistry techniques can damage the bulk material during processing. This dissertation examines the use of plasma processing as an alternative method for producing these highly functionalized surfaces on nanoparticles and polymeric scaffolds through the use of plasma modification and plasma enhanced chemical vapor deposition techniques. Specifically, this dissertation will focus on (1) plasma deposition of SiO2 barrier films on nanoparticle substrates; (2) surface functionalization of amine and alcohol groups through (a) plasma co-polymerization and (b) plasma modification; and (3) the design and construction of plasma hardware to facilitate plasma processing of nanoparticles and polymeric scaffolds. The body of work presented herein first examines the fabrication of composite nanoparticles by plasma processing. SiOxC y and hexylamine films were coated onto TiO2 nanoparticles to demonstrate enhanced water dispersion properties. Continuous wave and pulsed allyl alcohol plasmas were used to produce highly functionalized Fe2 O3 supported nanoparticles. Specifically, film composition was

  13. MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films

    Science.gov (United States)

    Ben-Yaacov, Tammy

    In the past decade, there has been widespread effort in the development of zinc oxide as a II-V1 semiconductor material. ZnO has potential advantages in optoelectronip device applications due to its unique electrical and optical properties. What stands out among these properties is its wide direct bandgap of 3.37 eV and its high electrical conductivity and transparency in the visible and near-UV regions of the spectrum. ZnO can be grown heteroepitaxially on GaN under near lattice-matched conditions and homoepitaxially as well, as high-quality bulk ZnO substrates are commercially available. This dissertation focuses on the development of the growth of high-quality, single crystal n-type ZnO films, control of n-type conductivity, as well as its application as a transparent contact material in GaN-based devices. The first part of this dissertation is an extensive heteroepitaxial and homoepitaxial growth study presenting the properties of ZnO(0001) layers grown on GaN(0001) templates and ZnO(0001) substrates. We show that deposition on GaN requires a two-step growth technique involving the growth of a low temperature nucleation layer before growing a high temperature epitaxial layer in order to obtain smooth ZnO films with excellent crystal quality and step-flow surface morphology. We obtained homoepitaxial ZnO(0001) films of structural quality and surface morphology that is comparable to the as-received substrates, and showed that a high growth temperature (≥1000°C) is needed in order to achieve step-flow growth mode. We performed n-type doping experiments, and established the conditions for which Indium effectively controls the n-type conductivity of ZnO films grown on GaN(0001) templates. A peak carrier concentration of 3.22x 10 19cm-3 and minimum sheet resistance of 97 O/square was achieved, while simultaneously maintaining good morphology and crystal quality. Finally, we present In-doped ZnO films implemented as p-contacts for GaN-based solar cells and LEDs

  14. Ion-substituted calcium phosphate coatings deposited by plasma-assisted techniques: A review.

    Science.gov (United States)

    Graziani, Gabriela; Bianchi, Michele; Sassoni, Enrico; Russo, Alessandro; Marcacci, Maurilio

    2017-05-01

    One of the main critical aspects behind the failure or success of an implant resides in its ability to fast bond with the surrounding bone. To boost osseointegration, the ideal implant material should exhibit composition and structure similar to those of biological apatite. To this aim, the most common approach is to coat the implant surface with a coating of hydroxyapatite (HA), resembling the main component of mineralized tissues. However, bone apatite is a non-stoichiometric, multi-substituted poorly-crystalline apatite, containing significant amounts of foreign ions, with high biological relevance. Ion-substituted HAs can be deposited by so called "wet methods", which are however poorly reproducible and hardly industrially feasible; at the same time bioactive coatings realized by plasma assisted method, interesting for industrial applications, are generally made of stoichiometric (i.e. un-substituted) HA. In this work, the literature concerning plasma-assisted deposition methods used to deposit ion-substituted HA was reviewed and the last advances in this field discussed. The ions taken into exam are those present in mineralized tissues and possibly having biological relevance. Notably, literature about this topic is scarce, especially relating to in vivo animal and clinical trials; further on, available studies evaluate the performance of substituted coatings from different points of view (mechanical properties, bone growth, coating dissolution, etc.) which hinders a proper evaluation of the real efficacy of ion-doped HA in promoting bone regeneration, compared to stoichiometric HA. Moreover, results obtained for plasma sprayed coatings (which is the only method currently employed for deposition at the industrial scale) were collected and compared to those of novel plasma-assisted techniques, that are expected to overcome its limitations. Data so far available on the topic were discussed to highlight advantages, limitations and possible perspectives of these

  15. Microdroplet deposition through a film-free laser forward printing technique

    Energy Technology Data Exchange (ETDEWEB)

    Patrascioiu, A.; Fernandez-Pradas, J.M.; Morenza, J.L. [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Serra, P., E-mail: pserra@ub.edu [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Circular droplets are obtained for a wide range of focusing depths at fixed energy. Black-Right-Pointing-Pointer Focusing depth variation study reveals two abrupt transitions in droplet diameter. Black-Right-Pointing-Pointer Liquid ejection mechanism is mediated by two types of jets of different origin. Black-Right-Pointing-Pointer Evolution of jets depends on the focusing depth accounting for the seen transitions. - Abstract: A recently developed film-free laser forward microprinting technique allows printing transparent and weakly absorbing liquids with high resolution and reproducibility. Its operating principle consists in the tight focusing of ultrashort laser pulses inside the liquid, and near its free surface, such that all the laser energy is absorbed in a small region around the beam waist. A cavitation bubble is then created inside the liquid, whose subsequent expansion results into the ejection of liquid. The collection of the ejected liquid on a substrate leads to the deposition of micron-sized droplets. In this work, we investigate a relevant process parameter of the technique, namely the laser focusing depth, and its influence on the morphology of the deposited droplets. The study reveals that for a fixed laser pulse energy there exists a relatively wide range of focusing depths at which circular and uniform droplets can be printed. The process of liquid ejection is also investigated. Time-resolved images reveal that liquid ejection proceeds through the formation of two kinds of jets which display clearly differentiated dynamics, and which could provide an interpretation for the dependence observed between the morphology of the deposited droplets and the laser focusing depth.

  16. Microdroplet deposition through a film-free laser forward printing technique

    International Nuclear Information System (INIS)

    Patrascioiu, A.; Fernández-Pradas, J.M.; Morenza, J.L.; Serra, P.

    2012-01-01

    Highlights: ► Circular droplets are obtained for a wide range of focusing depths at fixed energy. ► Focusing depth variation study reveals two abrupt transitions in droplet diameter. ► Liquid ejection mechanism is mediated by two types of jets of different origin. ► Evolution of jets depends on the focusing depth accounting for the seen transitions. - Abstract: A recently developed film-free laser forward microprinting technique allows printing transparent and weakly absorbing liquids with high resolution and reproducibility. Its operating principle consists in the tight focusing of ultrashort laser pulses inside the liquid, and near its free surface, such that all the laser energy is absorbed in a small region around the beam waist. A cavitation bubble is then created inside the liquid, whose subsequent expansion results into the ejection of liquid. The collection of the ejected liquid on a substrate leads to the deposition of micron-sized droplets. In this work, we investigate a relevant process parameter of the technique, namely the laser focusing depth, and its influence on the morphology of the deposited droplets. The study reveals that for a fixed laser pulse energy there exists a relatively wide range of focusing depths at which circular and uniform droplets can be printed. The process of liquid ejection is also investigated. Time-resolved images reveal that liquid ejection proceeds through the formation of two kinds of jets which display clearly differentiated dynamics, and which could provide an interpretation for the dependence observed between the morphology of the deposited droplets and the laser focusing depth.

  17. A simple method to deposit palladium doped SnO2 thin films using plasma enhanced chemical vapor deposition technique

    International Nuclear Information System (INIS)

    Kim, Young Soon; Wahab, Rizwan; Shin, Hyung-Shik; Ansari, S. G.; Ansari, Z. A.

    2010-01-01

    This work presents a simple method to deposit palladium doped tin oxide (SnO 2 ) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl 4 ) was used as precursor and oxygen (O 2 , 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C 5 HF 6 O 2 ) 2 ) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd 2 Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 mΩ cm as a function of deposition temperature from 400 to 600 deg. C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.

  18. In situ synchrotron X-ray studies during metal-organic chemical vapor deposition of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Thompson, Carol [Northern Illinois Univ., DeKalb, IL (United States); Argonne National Lab., Argonne, IL (United States); Highland, Matthew J.; Perret, Edith; Fuoss, Paul H.; Streiffer, Stephen K.; Stephenson, G. Brian [Argonne National Lab., Argonne, IL (United States); Richard, Marie-Ingrid [Universite Paul Cezanne Aix-Marseille, Marseille (France)

    2012-07-01

    In-situ, time-resolved techniques provide valuable insight into the complex interplay of surface structural and chemical evolution occurring during materials synthesis and processing of semiconductors. Our approach is to observe the evolution of surface structure and morphology at the atomic scale in real-time during metal organic vapor phase deposition (MOCVD) by using grazing incidence x-ray scattering and X-ray fluorescence, coupled with visible light scattering. Our vertical-flow MOCVD chamber is mounted on a 'z-axis' surface diffractometer designed specifically for these studies of the film growth, surface evolution and the interactions within a controlled growth environment. These techniques combine the ability of X-rays to penetrate a complex environment for measurements during growth and processing, with the sensitivity of surface scattering techniques to atomic and nanoscale structure. In this talk, we outline our program and discuss examples from our in-situ and real-time X-ray diffraction and fluorescence studies of InN, GaN, and InGaN growth on GaN(0001).

  19. Buffer free MOCVD growth of GaN on 4H-SiC: Effect of substrate treatments and UV-photoirradiation

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, Maria; Giangregorio, Maria M.; Bruno, Giovanni [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR and INSTM UdR Bari, via Orabona, 4, 70126 Bari (Italy); Kim, Tong-Ho; Choi, Soojeong; Brown, April [Department of Electrical and Computer Engineering, Duke University, Durham, NC 27709 (United States)

    2006-05-15

    GaN has been grown directly on the Si-face 4H-SiC(0001) substrates using remote plasma-assisted metalorganic chemical vapour deposition (RP-MOCVD) with UV-light irradiation. The effects of substrate pre-treatments and UV-photoirradiation of the growth surface on GaN nucleation and film morphology are investigated. Optical data from spectroscopic ellipsometry measurements and morphological data show an improvement in nucleation and material quality with UV-light irradiation. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, T.

    1999-10-20

    This report describes research performed by the University of Florida during Phase 2 of this subcontract. First, to study CIGS, researchers adapted a contactless, nondestructive technique previously developed for measuring photogenerated excess carrier lifetimes in SOI wafers. This dual-beam optical modulation (DBOM) technique was used to investigate the differences between three alternative methods of depositing CdS (conventional chemical-bath deposition [CBD], metal-organic chemical vapor deposition [MOCVD], and sputtering). Second, a critical assessment of the Cu-In-Se thermochemical and phase diagram data using standard CALPHAD procedures is being performed. The outcome of this research will produce useful information on equilibrium vapor compositions (required annealing ambients, Sex fluxes from effusion cells), phase diagrams (conditions for melt-assisted growth), chemical potentials (driving forces for diffusion and chemical reactions), and consistent solution models (extents of solid solutions and extending phase diagrams). Third, an integrated facility to fabricate CIS PV devices was established that includes migration-enhanced epitaxy (MEE) for deposition of CIS, a rapid thermal processing furnace for absorber film formation, sputtering of ZnO, CBD or MOCVD of CdS, metallization, and pattern definition.

  1. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  2. Thin RuO2 conducting films grown by MOCVD for microelectronic applications

    International Nuclear Information System (INIS)

    Froehlich, K.; Cambel, V.; Machajdik, D.; Pignard, S.; Baumann, P. K.; Lindner, J.; Schumacher, M.

    2002-01-01

    We have prepared thin RuO 2 films by MOCVD using thermal evaporation of Ru(thd) 2 (cod) solid precursor. The films were prepared at deposition temperatures between 250 and 500 grad C on silicon and sapphire substrates. Different structure was observed for the RuO 2 films on these substrates; the films on Si substrate were polycrystalline, while X-ray diffraction analysis revealed epitaxial growth of RuO 2 on sapphire substrates. Polycrystalline RuO 2 films prepared at temperatures below 300 grad C on Si substrate exhibit smooth surface and excellent step coverage. Highly conformal growth of the RuO 2 films at low temperature and low pressure results in nearly 100% step coverage for sub-mm features with 1:1 aspect ratio. Resistivity of the polycrystalline RuO 2 at room temperature ranged between 100 and 200 μ x Ω x cm. These films are suitable for CMOS and RAM applications. (Authors)

  3. Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling

    KAUST Repository

    Li, Kuang-Hui; Alotaibi, Hamad S.; Sun, Haiding; Lin, Ronghui; Guo, Wenzhe; Torres-Castanedo, Carlos G.; Liu, Kaikai; Galan, Sergio V.; Li, Xiaohang

    2018-01-01

    In a conventional induction-heating III-nitride metalorganic chemical vapor deposition (MOCVD) reactor, the induction coil is outside the chamber. Therefore, the magnetic field does not couple with the susceptor well, leading to compromised heating efficiency and harmful coupling with the gas inlet and thus possible overheating. Hence, the gas inlet has to be at a minimum distance away from the susceptor. Because of the elongated flow path, premature reactions can be more severe, particularly between Al- and B-containing precursors and NH3. Here, we propose a structure that can significantly improve the heating efficiency and allow the gas inlet to be closer to the susceptor. Specifically, the induction coil is designed to surround the vertical cylinder of a T-shaped susceptor comprising the cylinder and a top horizontal plate holding the wafer substrate within the reactor. Therefore, the cylinder coupled most magnetic field to serve as the thermal source for the plate. Furthermore, the plate can block and thus significantly reduce the uncoupled magnetic field above the susceptor, thereby allowing the gas inlet to be closer. The results show approximately 140% and 2.6 times increase in the heating and susceptor coupling efficiencies, respectively, as well as a 90% reduction in the harmful magnetic flux on the gas inlet.

  4. Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling

    KAUST Repository

    Li, Kuang-Hui

    2018-02-23

    In a conventional induction-heating III-nitride metalorganic chemical vapor deposition (MOCVD) reactor, the induction coil is outside the chamber. Therefore, the magnetic field does not couple with the susceptor well, leading to compromised heating efficiency and harmful coupling with the gas inlet and thus possible overheating. Hence, the gas inlet has to be at a minimum distance away from the susceptor. Because of the elongated flow path, premature reactions can be more severe, particularly between Al- and B-containing precursors and NH3. Here, we propose a structure that can significantly improve the heating efficiency and allow the gas inlet to be closer to the susceptor. Specifically, the induction coil is designed to surround the vertical cylinder of a T-shaped susceptor comprising the cylinder and a top horizontal plate holding the wafer substrate within the reactor. Therefore, the cylinder coupled most magnetic field to serve as the thermal source for the plate. Furthermore, the plate can block and thus significantly reduce the uncoupled magnetic field above the susceptor, thereby allowing the gas inlet to be closer. The results show approximately 140% and 2.6 times increase in the heating and susceptor coupling efficiencies, respectively, as well as a 90% reduction in the harmful magnetic flux on the gas inlet.

  5. The controlled growth of GaN microrods on Si(111) substrates by MOCVD

    Science.gov (United States)

    Foltynski, Bartosz; Garro, Nuria; Vallo, Martin; Finken, Matthias; Giesen, Christoph; Kalisch, Holger; Vescan, Andrei; Cantarero, Andrés; Heuken, Michael

    2015-03-01

    In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiNx/Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six { 10 1 bar 1} planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm-1) with crystal quality comparable to bulk crystals (FWHM=4.2±1 cm-1). Such GaN microrods might be used as a next-generation device concept for solid-state lighting (SSL) applications by realizing core-shell InGaN/GaN multi-quantum wells (MQWs) on the n-GaN rod base.

  6. Alkaline-doped manganese perovskite thin films grown by MOCVD

    International Nuclear Information System (INIS)

    Bibes, M.; Gorbenko, O.; Martinez, B.; Kaul, A.; Fontcuberta, J.

    2000-01-01

    We report on the preparation and characterization of La 1-x Na x MnO 3 thin films grown by MOCVD on various single-crystalline substrates. Under appropriate conditions epitaxial thin films have been obtained. The Curie temperatures of the films, which are very similar to those of bulk samples of similar composition, reflect the residual strain caused by the substrate. The anisotropic magnetoresistance AMR of the films has been analyzed in some detail, and it has been found that it has a two-fold symmetry at any temperature. Its temperature dependence mimics that of the electrical resistivity and magnetoresistance measured at similar fields, thus suggesting that the real structure of the material contributes to the measured AMR besides the intrinsic component

  7. Preparation and characterization of VOx nanorods using pulsed laser deposition technique

    International Nuclear Information System (INIS)

    Rama, N.; Senthil Kumar, E.; Ramachandra Rao, M.S.

    2009-01-01

    Full text: Vanadium oxide (VO x ) is one of the most functional oxides of the transition metal oxide family. This versatility comes because of the ability of Vanadium to exist as both monovalent and multivalent in these oxides. These oxides find potential usage in the field of thermochromism electrochromism catalysts, electrochemistry etc. especially in their nano-form because of their increased sensitivity to these applications. These nano-forms are usually prepared using conventional techniques such as solgel techniques, vapour phase transport, hydrothermal synthesis etc. In this work we have used pulsed laser deposition technique to fabricate vanadium oxide nanorods for the first time. The grown nanorods has a predominant VO 2 phase with a secondary phase of V 3 O 7 . The diameters of the rods were around 300 nm with Raman spectra showing all the group vibrations corresponding to VO x phase. The nanorods exhibited photoluminescence in the visible range due to the presence of oxygen defects. These results, including the mechanism of growth of these nanorods, will be discussed in detail. The existence of multivalence in these rods finds potential applications in electrochemistry while the visible photoluminescence in optical applications

  8. Tight comparison of Mg and Y thin film photocathodes obtained by the pulsed laser deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Lorusso, A. [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Solombrino, L. [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Chiadroni, E. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, 00044 Frascati (Italy); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping (Sweden); Perrone, A. [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy)

    2016-11-11

    In this work Magnesium (Mg) and Yttrium (Y) thin films have been deposited on Copper (Cu) polycrystalline substrates by the pulsed laser ablation technique for photocathode application. Such metallic materials are studied for their interesting photoemission properties and are proposed as a good alternative to the Cu photocathode, which is generally used in radio-frequency guns. Mg and Y films were uniform with no substantial differences in morphology; a polycrystalline structure was found for both of them. Photoemission measurements of such cathodes based on thin films were performed, revealing a quantum efficiency higher than Cu bulk. Photoemission theory according to the three-step model of Spicer is invoked to explain the superior photoemission performance of Mg with respect to Y. - Highlights: • Mg and Y thin film photocathodes were successfully prepared by pulsed laser deposition. • Mg quantum efficiency is higher than Y, despite its higher work function. • The three-step model of Spicer justify the difference in quantum efficiency.

  9. Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

    KAUST Repository

    Shi, Yumeng; Li, Henan; Li, Lain-Jong

    2014-01-01

    In recent years there have been many breakthroughs in two-dimensional (2D) nanomaterials, among which the transition metal dichalcogenides (TMDs) attract significant attention owing to their unusual properties associated with their strictly defined dimensionalities. TMD materials with a generalized formula of MX2, where M is a transition metal and X is a chalcogen, represent a diverse and largely untapped source of 2D systems. Semiconducting TMD monolayers such as MoS2, MoSe2, WSe2 and WS2 have been demonstrated to be feasible for future electronics and optoelectronics. The exotic electronic properties and high specific surface areas of 2D TMDs offer unlimited potential in various fields including sensing, catalysis, and energy storage applications. Very recently, the chemical vapour deposition technique (CVD) has shown great promise to generate high-quality TMD layers with a scalable size, controllable thickness and excellent electronic properties. Wafer-scale deposition of mono to few layer TMD films has been obtained. Despite the initial success in the CVD synthesis of TMDs, substantial research studies on extending the methodology open up a new way for substitution doping, formation of monolayer alloys and producing TMD stacking structures or superlattices. In this tutorial review, we will introduce the latest development of the synthesis of monolayer TMDs by CVD approaches.

  10. Transparent conducting ZnO-CdO thin films deposited by e-beam evaporation technique

    Science.gov (United States)

    Mohamed, H. A.; Ali, H. M.; Mohamed, S. H.; Abd El-Raheem, M. M.

    2006-04-01

    Thin films of Zn{1-x} Cd{x}O with x = 0, 0.1, 0.2, 0.3, 0.4 and 0.5 at.% were deposited by electron-beam evaporation technique. It has been found that, for as-deposited films, both the transmittance and electrical resistivity decreased with increasing the Cd content. To improve the optical and electrical properties of these films, the effect of annealing temperature and time were taken into consideration for Zn{1-x} Cd{x}O film with x = 0.2. It was found that, the optical transmittance and the electrical conductivity were improved significantly with increasing the time of annealing. At fixed temperature of 300 °C, the transmittance increased with increasing the time of annealing and reached its maximum values of 81% in the visible region and 94% in the NIR region at annealing time of 120 min. The low electrical resistivity of 3.6 × 10-3 Ω cm was achieved at the same conditions. Other parameters named free carrier concentrations, refractive index, extinction coefficient, plasma frequency, and relaxation time were studied as a function of annealing temperature and time for 20% Cd content.

  11. CuFeO2 formation using fused deposition modeling 3D printing and sintering technique

    Science.gov (United States)

    Salea, A.; Dasaesamoh, A.; Prathumwan, R.; Kongkaew, T.; Subannajui, K.

    2017-09-01

    CuFeO2 is a metal oxide mineral material which is called delafossite. It can potentially be used as a chemical catalyst, and gas sensing material. There are methods to fabricate CuFeO2 such as chemical synthesis, sintering, sputtering, and chemical vapor deposition. In our work, CuFeO2 is prepared by Fused Deposition Modeling (FDM) 3D printing. The composite filament which composed of Cu and Fe elements is printed in three dimensions, and then sintered and annealed at high temperature to obtain CuFeO2. Suitable polymer blend and maximum percent volume of metal powder are studied. When percent volume of metal powder is increased, melt flow rate of polymer blend is also increased. The most suitable printing condition is reported and the properties of CuFeO2 are observed by Scanning Electron Microscopy, and Dynamic Scanning Calorimeter, X-ray diffraction. As a new method to produce semiconductor, this technique has a potential to allow any scientist or students to design and print a catalyst or sensing material by the most conventional 3D printing machine which is commonly used around the world.

  12. Tuning the morphology of metastable MnS films by simple chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Dhandayuthapani, T. [Directorate of Distance Education, Alagappa University, Karaikudi 630004 (India); Girish, M. [Department of Physics, Alagappa University, Karaikudi 630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi 630004 (India); Sanjeeviraja, C. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi 630004 (India); Gopalakrishnan, R. [Department of Physics, Anna University, Chennai 600025 (India)

    2015-10-30

    Graphical abstract: - Highlights: • MnS films with diverse morphological features were prepared without any complexing agent. • The change in morphology of MnS films may be due to the “oriented aggregation”. • The dual role (as sulfur source and structure directing agent) of thiourea was observed. • Sulfur source concentration induced enhancement in the crystallization of films. - Abstract: In the present investigation, we have prepared the spherical particles, almond-like, and cauliflower-like morphological structures of metastable MnS films on glass substrate by chemical bath deposition technique at low temperature without using any complexing or chelating agent. The morphological change of MnS films with molar ratio may be due to the oriented aggregation of adjacent particles. The compositional purity of deposited film was confirmed by the EDAX study. X-ray diffraction and micro-Raman studies confirm the sulfur source concentration induced enhancement in the crystallization of films with metastable MnS phase (zinc-blende β-MnS, and wurtzite γ-MnS). The shift in PL emission peak with molar ratio may be due to the change in optical energy band gap of the MnS, which was further confirmed by the optical absorbance study. The paramagnetic behavior of the sample was confirmed by the M–H plot.

  13. Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

    KAUST Repository

    Shi, Yumeng

    2014-10-20

    In recent years there have been many breakthroughs in two-dimensional (2D) nanomaterials, among which the transition metal dichalcogenides (TMDs) attract significant attention owing to their unusual properties associated with their strictly defined dimensionalities. TMD materials with a generalized formula of MX2, where M is a transition metal and X is a chalcogen, represent a diverse and largely untapped source of 2D systems. Semiconducting TMD monolayers such as MoS2, MoSe2, WSe2 and WS2 have been demonstrated to be feasible for future electronics and optoelectronics. The exotic electronic properties and high specific surface areas of 2D TMDs offer unlimited potential in various fields including sensing, catalysis, and energy storage applications. Very recently, the chemical vapour deposition technique (CVD) has shown great promise to generate high-quality TMD layers with a scalable size, controllable thickness and excellent electronic properties. Wafer-scale deposition of mono to few layer TMD films has been obtained. Despite the initial success in the CVD synthesis of TMDs, substantial research studies on extending the methodology open up a new way for substitution doping, formation of monolayer alloys and producing TMD stacking structures or superlattices. In this tutorial review, we will introduce the latest development of the synthesis of monolayer TMDs by CVD approaches.

  14. Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Sadananda Kumar, N., E-mail: sadanthara@gmail.com; Bangera, Kasturi V.; Shivakumar, G. K. [National Institute of Technology Karnataka, Surathkal, Thin Films Laboratory, Department of Physics (India)

    2015-07-15

    Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm{sup 2} V{sup –1} s{sup –1}, and a hole concentration of 6.25 × 10{sup 17} cm{sup –3}.

  15. Geophysical techniques for reconnaissance investigations of soils and surficial deposits in mountainous terrain

    Science.gov (United States)

    Olson, C.G.; Doolittle, J.A.

    1985-01-01

    Two techniques were assessed for their capabilities in reconnaissance studies of soil characteristics: depth to the water table and depth to bedrock beneath surficial deposits in mountainous terrain. Ground-penetrating radar had the best near-surface resolution in the upper 2 m of the profile and provided continuous interpretable imagery of soil profiles and bedrock surfaces. Where thick colluvium blankets side slopes, the GPR could not consistently define the bedrock interface. In areas with clayey or shaley sediments, the GPR is also more limited in defining depth and is less reliable. Seismic refraction proved useful in determining the elevation of the water table and depth to bedrock, regardless of thickness of overlying material, but could not distinguish soil-profile characteristics.-from Authors

  16. Zn Thin Film Deposition for Fe Layer Shielding Use the Sputtering Technique on Cylindrical Form

    International Nuclear Information System (INIS)

    Yunanto; Tjipto Sujitno, BA; Suprapto; Simbolon, Sahat

    2002-01-01

    Deposition of thin film on Fe substrate use sputtering technique on cylindrical form was carried out. The purpose of this research is to protect Fe due to the corrosion with Zn thin film. Sputtering method was proposed to protect a component of complex form. Substrate has functioned as anode, meanwhile target in cylindrical form as a cathode. Argon ion from anode bombard Zn with enough energy for releasing Zn. Zn atom would scatter and some of then was focused on the anode. For testing Zn atom on Fe by using XRF and corrosion rate with potentiostat. It was found that corrosion rate was decreased from 0.051 mpy to 0.031 mpy on 0.63 % of Fe substrate. (author)

  17. Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, Bhaumik V., E-mail: bhaumik-phy@yahoo.co.in; Joshi, U. S. [Department of Physics, University School of Sciences, Gujarat University, Ahmedabad-380 009 (India)

    2016-05-23

    Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10{sup −3} V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×10{sup 18} cm{sup 3}, while the Hall mobility of the IGZO thin film was 16 cm{sup 2} V{sup −1}S{sup −1}.

  18. Diameter Tuning of β-Ga2O3 Nanowires Using Chemical Vapor Deposition Technique.

    Science.gov (United States)

    Kumar, Mukesh; Kumar, Vikram; Singh, R

    2017-12-01

    Diameter tuning of [Formula: see text]-Ga 2 O 3 nanowires using chemical vapor deposition technique have been investigated under various experimental conditions. Diameter of root grown [Formula: see text]-Ga 2 O 3 nanowires having monoclinic crystal structure is tuned by varying separation distance between metal source and substrate. Effect of gas flow rate and mixer ratio on the morphology and diameter of nanowires has been studied. Nanowire diameter depends on growth temperature, and it is independent of catalyst nanoparticle size at higher growth temperature (850-900 °C) as compared to lower growth temperature (800 °C). These nanowires show changes in structural strain value with change in diameter. Band-gap of nanowires increases with decrease in the diameter.

  19. Experimental investigation of ash deposits characteristics of co-combustion of coal and rice hull using a digital image technique

    International Nuclear Information System (INIS)

    Qiu, Kunzan; Zhang, Hailong; Zhou, Hao; Zhou, Bin; Li, Letian; Cen, Kefa

    2014-01-01

    This paper investigated the ash deposit characteristics during the co-firing Da Tong (DA) coal with different proportions of rice hull (0%, 5%, 10%, and 20%, based on weight) in a pilot-scale furnace. The growth of ash deposit with a four-stage mode was presented. The stable thickness values of DA coal, 5% rice hull, 10% rice hull, and 20% rice hull were 0.5, 1.4, 2.9, 5.7 cm, with stable heat flux values of 230, 200, 175, and 125 kW/m 2 , respectively. According to the results of scanning electron microscopy with energy dispersive X-ray analysis (SEM-EDX), the amount of Si in the deposits increased with the increasing proportion of rice hull rich in SiO 2 . The X-ray diffraction (XRD) analysis results indicated that most elements except Si were in the amorphous state because of the formation of eutectics. The stable thicknesses of deposits increased exponentially with the proportion of rice hull. The deposit was loose, easy removable but it reduced the heat transfer significantly. Consequently, sootblowing timely was necessary when co-firing DA coal with rice hull. - Highlights: • Digital image technique was used to monitor deposits growth process. • A type of four stages mode of ash deposit growth was presented. • The heat flux of ash deposits fit a three-stage mode. • The addition of rice hull increased the porosity of deposits

  20. Metalorganic chemical vapor deposition of gallium nitride on sacrificial substrates

    Science.gov (United States)

    Fenwick, William Edward

    GaN-based light emitting diodes (LEDs) face several challenges if the technology is to continue to make a significant impact in general illumination, and on technology that has become known as solid state lighting (SSL). Two of the most pressing challenges for the continued penetration of SSL into traditional lighting applications are efficacy and total lumens from the device, and their related cost. The development of alternative substrate technologies is a promising avenue toward addressing both of these challenges, as both GaN-based device technology and the associated metalorganic chemical vapor deposition (MOCVD) technology are already relatively mature technologies with a well-understood cost base. Zinc oxide (ZnO) and silicon (Si) are among the most promising alternative substrates for GaN epitaxy. These substrates offer the ability to access both higher efficacy and lumen devices (ZnO) at a much reduced cost. This work focuses on the development of MOCVD growth processes to yield high quality GaN-based materials and devices on both ZnO and Si. ZnO is a promising substrate for growth of low defect-density GaN because of its similar lattice constant and thermal expansion coefficient. The major hurdles for GaN growth on ZnO are the instability of the substrate in a hydrogen atmosphere, which is typical of nitride growth conditions, and the inter-diffusion of zinc and oxygen from the substrate into the GaN-based epitaxial layer. A process was developed for the MOCVD growth of GaN and InxGa 1-xN on ZnO that attempted to address these issues. The structural and optical properties of these films were studied using various techniques. X-ray diffraction (XRD) showed the growth of wurtzite GaN on ZnO, and room-temperature photoluminescence (RT-PL) showed near band-edge luminescence from the GaN and InxGa1-xN layers. However, high zinc and oxygen concentrations due to interdiffusion near the ZnO substrate remained an issue; therefore, the diffusion of zinc and oxygen

  1. Synthesis, characterization, and thermal properties of homoleptic rare-earth guanidinates: promising precursors for MOCVD and ALD of rare-earth oxide thin films.

    Science.gov (United States)

    Milanov, Andrian P; Fischer, Roland A; Devi, Anjana

    2008-12-01

    Eight novel homoleptic tris-guanidinato complexes M[(N(i)Pr)(2)CNR(2)](3) [M = Y (a), Gd (b), Dy (c) and R = Me (1), Et (2), (i)Pr (3)] have been synthesized and characterized by NMR, CHN-analysis, mass spectrometry and infrared spectroscopy. Single crystal structure analysis revealed that all the compounds are monomers with the rare-earth metal center coordinated to six nitrogen atoms of the three chelating guanidinato ligands in a distorted trigonal prism geometry. With the use of TGA/DTA and isothermal TGA analysis, the thermal characteristics of all the complexes were studied in detail to evaluate their suitability as precursors for thin film deposition by MOCVD and ALD. The (i)Pr-Me(2)N-guanidinates of Y, Gd and Dy (1a-c) showed excellent thermal characteristics in terms of thermal stability and volatility. Additionally, the thermal stability of the (i)Pr-Me(2)N-guanidinates of Y and Dy (1a, c) in solution was investigated by carrying out NMR decomposition experiments and both the compounds were found to be remarkably stable. All these studies indicate that (i)Pr-Me(2)N-guanidinates of Y, Gd and Dy (1a-c) have the prerequisites for MOCVD and ALD applications which were confirmed by the successful deposition of Gd(2)O(3) and Dy(2)O(3) thin films on Si(100) substrates. The MOCVD grown films of Gd(2)O(3) and Dy(2)O(3) were highly oriented in the cubic phase, while the ALD grown films were amorphous.

  2. A comparison of biological effect and spray liquid distribution and deposition for different spray application techniques in different crops

    OpenAIRE

    Larsolle, Anders; Wretblad, Per; Westberg, Carl

    2002-01-01

    The objective of this study was to compare a selection of spray application techniques with different application volumes, with respect to the spray liquid distribution on flat surfaces, the deposition in fully developed crops and the biological effect. The spray application techniques in this study were conventional spray technique with three different nozzles: Teelet XR, Lechler ID and Lurmark DriftBeta, and also AirTec, Danfoil, Hardi Twin, Kyndestoit and Släpduk. The dynamic spray liquid ...

  3. Techniques for the research on mass deposition effects in the bio-materials induced by heavy ion implantation

    International Nuclear Information System (INIS)

    Yuan Shibin; Wei Zengquan; Li Qiang

    2002-01-01

    Researchers have used heavy ion beams to implant small biomolecules, followed by advanced instrumental analysis to make preliminary studies on mass deposition induced by ion implantation. But research reports on the biological effects, i.e. mass deposition effects induced by mass deposition in living tissues, cells and macro-biomolecules have not been delivered hitherto. In the near future radioactive heavy ion beams will be possible to implant living cells and biomolecules, and auto-radiography, radioactive measurements and molecular biological techniques will be employed to further studies on the effects

  4. Analyzing the LiF thin films deposited at different substrate temperatures using multifractal technique

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, R.P. [Department of Physics, University of Allahabad, Allahabad, UP 211002 (India); Dwivedi, S., E-mail: suneetdwivedi@gmail.com [K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Mittal, A.K. [Department of Physics, University of Allahabad, Allahabad, UP 211002 (India); K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Kumar, Manvendra [Nanotechnology Application Centre, University of Allahabad, Allahabad, UP 211002 (India); Pandey, A.C. [K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Nanotechnology Application Centre, University of Allahabad, Allahabad, UP 211002 (India)

    2014-07-01

    The Atomic Force Microscopy technique is used to characterize the surface morphology of LiF thin films deposited at substrate temperatures 77 K, 300 K and 500 K, respectively. It is found that the surface roughness of thin film increases with substrate temperature. The multifractal nature of the LiF thin film at each substrate temperature is investigated using the backward two-dimensional multifractal detrended moving average analysis. The strength of multifractility and the non-uniformity of the height probabilities of the thin films increase as the substrate temperature increases. Both the width of the multifractal spectrum and the difference of fractal dimensions of the thin films increase sharply as the temperature reaches 500 K, indicating that the multifractility of the thin films becomes more pronounced at the higher substrate temperatures with greater cluster size. - Highlights: • Analyzing LiF thin films using multifractal detrended moving average technique • Surface roughness of LiF thin film increases with substrate temperature. • LiF thin films at each substrate temperature exhibit multifractality. • Multifractility becomes more pronounced at the higher substrate temperatures.

  5. Heavy Metals and Trace Elements Atmospheric Deposition Studies in Tula Region Using Moss Biomonitors Technique

    CERN Document Server

    Ermakova, E V; Steinnes, E

    2002-01-01

    For the first time the moss biomonitors technique was used in air pollution studies in Tula Region (Central Russia), applying NAA, AAS. Moss samples were collected at 83 sites in accordance with the sampling strategy adopted in European projects on biomonitoring atmospheric deposition. A wide set of trace elements in mosses was determined. The method of epithermal neutron activation at IBR-2 reactor of FLNP JINR has made it possible to identify 33 elements (Na, Mg, Al, Cl, K, Ca, Sc, V, Cr, Mn, Fe, Co, Ni, Zn, As, Br, Rb, Sr, Mo, Sb, I, Cs, Ba, La, Ce, Sm, Tb, Yb, Hf, Ta, W, Th, U) in the large-scale concentration range - from 10000 ppm for K to 0,001 ppm for Tb and Ta. Cu, Cd and Pb were determined by the flame AAS in the Norwegian Institute of Science and Technology. Using the graphical technique and principal component analysis allowed to separate plant, crustal and general pollution components in the moss. The obtained data will be used for constructing coloured maps of the distribution of elements over t...

  6. Plasma processing techniques for deposition of carbonic thin protective coatings on structural nuclear materials

    International Nuclear Information System (INIS)

    Andrei, V.; Oncioiu, G.; Coaca, E.; Rusu, O.; Lungu, C.

    2009-01-01

    Full text of publication follows: The production of nano-structured surface films with controlled properties is crucial for the development of materials necessary for the Advanced Systems for Nuclear Energy. Since the surface of materials is the zone through which materials interact with the environment, the surface science and surface engineering techniques plays an essential role in the understanding and control of the processes involved. Complex surface structures were developed on stainless steels used as structural nuclear materials: austenitic stainless steels based on Fe, austenitic steels with high content of Cr, ferrites resistant to corrosion, by various Plasma Processing methods which include: - Plasma Electrolytic (PE) treatments: the steel substrates were modified by nitriding and nitro-carburizing plasma diffusion treatments; - carbonic films deposition in Thermionic Vacuum Arc Plasma. The results of the characterization of surface structures obtained in various experimental conditions for improvement of the properties (corrosion resistance, hardness, wear properties) are reported: the processes and structures were characterized by correlation of the results of the complementary techniques: XPS, 'depth profiling', SEM, XRD, EIS. An overall description of the processes involved in the surface properties improvement, and some consideration about the new materials development for energy technologies are presented

  7. A review of hydroxyapatite-based coating techniques: Sol-gel and electrochemical depositions on biocompatible metals.

    Science.gov (United States)

    Asri, R I M; Harun, W S W; Hassan, M A; Ghani, S A C; Buyong, Z

    2016-04-01

    New promising techniques for depositing biocompatible hydroxyapatite-based coatings on biocompatible metal substrates for biomedical applications have continuously been exploited for more than two decades. Currently, various experimental deposition processes have been employed. In this review, the two most frequently used deposition processes will be discussed: a sol-gel dip coating and an electrochemical deposition. This study deliberates the surface morphologies and chemical composition, mechanical performance and biological responses of sol-gel dip coating as well as the electrochemical deposition for two different sample conditions, with and without coating. The review shows that sol-gel dip coatings and electrochemical deposition were able to obtain the uniform and homogeneous coating thickness and high adherent biocompatible coatings even in complex shapes. It has been accepted that both coating techniques improve bone strength and initial osseointegration rate. The main advantages and limitations of those techniques of hydroxyapatite-based coatings are presented. Furthermore, the most significant challenges and critical issues are also highlighted. Copyright © 2015 Elsevier Ltd. All rights reserved.

  8. Optimal properties for coated titanium implants with the hydroxyapatite layer formed by the pulsed laser deposition technique

    Science.gov (United States)

    Himmlova, Lucia; Dostalova, Tatjana; Jelinek, Miroslav; Bartova, Jirina; Pesakova, V.; Adam, M.

    1999-02-01

    Pulsed laser deposition technique allow to 'tailor' bioceramic coat for metal implants by the change of deposition conditions. Each attribute is influenced by the several deposition parameters and each parameter change several various properties. Problem caused that many parameters has an opposite function and improvement of one property is followed by deterioration of other attribute. This study monitor influence of each single deposition parameter and evaluate its importance form the point of view of coat properties. For deposition KrF excimer laser in stainless-steel deposition chamber was used. Deposition conditions (ambient composition and pressures, metallic substrate temperature, energy density and target-substrate distance) were changed according to the film properties. A non-coated titanium implant was used as a control. Films with promising mechanical quality underwent an in vitro biological tests -- measurement of proliferation activity, observing cell interactions with macrophages, fibroblasts, testing toxicity of percolates, observing a solubility of hydroxyapatite (HA) coat. Deposition conditions corresponding with the optimal mechanical and biochemical properties are: metal temperature 490 degrees Celsius, ambient-mixture of argon and water vapor, energy density 3 Jcm-2, target-substrate distance 7.5 cm.

  9. Laboratory model study of newly deposited dredger fills using improved multiple-vacuum preloading technique

    Directory of Open Access Journals (Sweden)

    Jingjin Liu

    2017-10-01

    Full Text Available Problems continue to be encountered concerning the traditional vacuum preloading method in field during the treatment of newly deposited dredger fills. In this paper, an improved multiple-vacuum preloading method was developed to consolidate newly dredger fills that are hydraulically placed in seawater for land reclamation in Lingang Industrial Zone of Tianjin City, China. With this multiple-vacuum preloading method, the newly deposited dredger fills could be treated effectively by adopting a novel moisture separator and a rapid improvement technique without sand cushion. A series of model tests was conducted in the laboratory for comparing the results from the multiple-vacuum preloading method and the traditional one. Ten piezometers and settlement plates were installed to measure the variations in excess pore water pressures and moisture content, and vane shear strength was measured at different positions. The testing results indicate that water discharge–time curves obtained by the traditional vacuum preloading method can be divided into three phases: rapid growth phase, slow growth phase, and steady phase. According to the process of fluid flow concentrated along tiny ripples and building of larger channels inside soils during the whole vacuum loading process, the fluctuations of pore water pressure during each loading step are divided into three phases: steady phase, rapid dissipation phase, and slow dissipation phase. An optimal loading pattern which could have a best treatment effect was proposed for calculating the water discharge and pore water pressure of soil using the improved multiple-vacuum preloading method. For the newly deposited dredger fills at Lingang Industrial Zone of Tianjin City, the best loading step was 20 kPa and the loading of 40–50 kPa produced the highest drainage consolidation. The measured moisture content and vane shear strength were discussed in terms of the effect of reinforcement, both of which indicate

  10. A Effect discussion of transient electromagnetic sounding technique in paleochannel-type sandstone-hosted uranium deposit

    International Nuclear Information System (INIS)

    Yang Jianchun; Fang Genxian; Yang Yaxin

    2003-01-01

    On the base of the application of transient electromagnetic technique of paleochannel-type sandstone-hosted uranium deposits in Tengchong region of Yunan Province, this paper analyses the detect example. It discusses the theory foundation of TEM, fieldwork means, data processing and interpret. By contrast with routine electricity farad, the transient electromagnetic technique have the special merit and favorable space resolve gender under conditions of intricacy terrain. This means can get good effect in detecting paleochannel-type sandstone-hosted uranium deposits space position. It is a good reference for other prospecting and exploration work

  11. Characterization of CuS nanocrystalline thin films synthesized by chemical bath deposition and dip coating techniques

    International Nuclear Information System (INIS)

    Chaki, Sunil H.; Deshpande, M.P.; Tailor, Jiten P.

    2014-01-01

    CuS thin films were synthesized by chemical bath deposition and dip coating techniques at ambient temperature. The energy dispersive analysis of X-rays of the thin films confirmed that both the as synthesized thin films are stoichiometric. The X-ray diffraction of the chemical bath deposited and dip coating deposited thin films showed that the films possess hexagonal structure having lattice parameters, a = b = 3.79 A and c = 16.34 A. The crystallite sizes determined from the X-ray diffraction data using Scherrer's formula for the chemical bath deposition and dip coating deposition thin films came out to be nearly 11 nm and 13 nm, respectively. The optical microscopy of the as deposited thin films surfaces showed that the substrates are well covered in both the deposited films. The scanning electron microscopy of the thin films clearly showed that in chemical bath deposited thin films the grain size varies from few μm to nm, while in dip coating deposited films the grain size ranges in nm. The optical bandgap determined from the optical absorbance spectrum analysis showed, chemical bath deposited thin films possess direct bandgap of 2.2 eV and indirect bandgap of 1.8 eV. In the case of dip coating deposited thin films, the direct bandgap is 2.5 eV and indirect bandgap is 1.9 eV. The d.c. electrical resistivity variation with temperature for both the deposited films showed that the resistivity decreases with temperature thus confirming the semiconducting nature. The thermoelectric power variations with temperature and the room temperature Hall Effect study of both the synthesized CuS thin films showed them to be of p-type conductivity. The obtained results are discussed in details. - Highlights: • CuS thin films were synthesized by chemical bath deposition and dip coating techniques. • The films possessed hexagonal structure. • The optical absorption showed that the films had direct and indirect bandgap. • Study of electrical transport properties

  12. Structural and superconducting properties of (Y,Gd)Ba2Cu3O7-δ grown by MOCVD on samarium zirconate buffered IBAD-MgO

    International Nuclear Information System (INIS)

    Stan, L; Holesinger, T G; Maiorov, B; Feldmann, D M; Usov, I O; DePaula, R F; Civale, L; Foltyn, S R; Jia, Q X; Chen, Y; Selvamanickam, V

    2008-01-01

    Textured samarium zirconate (SZO) films have been grown by reactive cosputtering directly on an ion beam assisted deposited (IBAD) MgO template, without an intermediate homoepitaxial MgO layer. The subsequent growth of 0.9 μm thick (Y,Gd)Ba 2 Cu 3 O 7-δ ((Y, Gd)BCO) films by metal organic chemical vapor deposition (MOCVD) yielded well textured films with a full width at half maximum of 1.9 0 and 3.4 0 for the out-of-plane and in-plane texture, respectively. Microstructural characterizations of the SZO buffered samples revealed clean interfaces. This indicates that the SZO not only provides a diffusion barrier, but also functions as a buffer for (Y, Gd)BCO grown by MOCVD. The achievement of self-field critical current densities (J c ) of over 2 MA cm -2 at 75.5 K is another proof of the effectiveness of SZO as a buffer on the IBAD-MgO template. The in-field measurements revealed an asymmetric angular dependence of J c and a shift of the ab-plane maxima due to the tilted nature of the template and (Y,Gd) 2 O 3 particles existing in the (Y, Gd)BCO matrix. The present results are especially important because they demonstrate that high temperature superconducting coated conductors with simpler architecture can be fabricated using commercially viable processes

  13. Investigation of defects in ultra-thin Al{sub 2}O{sub 3} films deposited on pure copper by the atomic layer deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Chang, M.L.; Wang, L.C. [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, H.C., E-mail: hclinntu@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Chen, M.J., E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, K.M. [Department of Materials Science and Engineering, Feng Chia University, No. 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan (China)

    2015-12-30

    Graphical abstract: Some residual OH ligands originating from incomplete reaction between TMA and surface species of OH* during ALD process induce the defects in deposited Al{sub 2}O{sub 3} films. Three possible types of defects are suggested. The analytic results indicate the defects are Type-I and/or Type-II but do not directly expose the substrate, like pinholes (Type-III). - Highlights: • Oxidation trials were conducted to investigate the defects in ultra-thin Al{sub 2}O{sub 3} films deposited ALD technique on pure copper. • The residual OH ligands in the deposited Al{sub 2}O{sub 3} films induce looser micro-structure which has worse oxidation resistance. • Superficial contamination particles on substrate surface are confirmed to be one of nucleation sites of the defects. - Abstract: Al{sub 2}O{sub 3} films with various thicknesses were deposited by the atomic layer deposition (ALD) technique on pure copper at temperatures of 100–200 °C. Oxidation trials were conducted in air at 200 °C to investigate the defects in these films. The analytic results show that the defects have a looser micro-structure compared to their surroundings, but do not directly expose the substrate, like pinholes. The film's crystallinity, mechanical properties and oxidation resistance could also be affected by these defects. Superficial contamination particles on the substrate surface are confirmed to be nucleation sites of the defects. A model for the mechanism of defect formation is proposed in this study.

  14. CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

    2014-09-15

    In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

    International Nuclear Information System (INIS)

    Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina; Levy-Clement, Claude

    2014-01-01

    In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl 2 to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl 2 treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)

    International Nuclear Information System (INIS)

    Sadekar, H.K.; Deshpande, N.G.; Gudage, Y.G.; Ghosh, A.; Chavhan, S.D.; Gosavi, S.R.; Sharma, Ramphal

    2008-01-01

    ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has ∼120 ± 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient (∼75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV

  17. Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)

    Energy Technology Data Exchange (ETDEWEB)

    Sadekar, H K [Arts, Commerce and Science college, Sonai 414105 (M.S.) (India); Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India); Deshpande, N G; Gudage, Y G; Ghosh, A; Chavhan, S D; Gosavi, S R [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India); Sharma, Ramphal [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)

    2008-04-03

    ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has {approx}120 {+-} 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient ({approx}75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV.

  18. Low-temperature deposition of ZnO thin films on PET and glass substrates by DC-sputtering technique

    International Nuclear Information System (INIS)

    Banerjee, A.N.; Ghosh, C.K.; Chattopadhyay, K.K.; Minoura, Hideki; Sarkar, Ajay K.; Akiba, Atsuya; Kamiya, Atsushi; Endo, Tamio

    2006-01-01

    The structural, optical and electrical properties of ZnO thin films (260 - 490 nm thick) deposited by direct-current sputtering technique, at a relatively low-substrate temperature (363 K), onto polyethylene terephthalate and glass substrates have been investigated. X-ray diffraction patterns confirm the proper phase formation of the material. Optical transmittance data show high transparency (80% to more than 98%) of the films in the visible portion of solar radiation. Slight variation in the transparency of the films is observed with a variation in the deposition time. Electrical characterizations show the room-temperature conductivity of the films deposited onto polyethylene terephthalate substrates for 4 and 5 h around 0.05 and 0.25 S cm -1 , respectively. On the other hand, for the films deposited on glass substrates, these values are 8.5 and 9.6 S cm -1 for similar variation in the deposition time. Room-temperature conductivity of the ZnO films deposited on glass substrates is at least two orders of magnitude higher than that of ZnO films deposited onto polyethylene terephthalate substrates under identical conditions. Hall-measurements show the maximum carrier concentration of the films on PET and glass substrate around 2.8 x 10 16 and 3.1 x 10 2 cm -3 , respectively. This report will provide newer applications of ZnO thin films in flexible display technology

  19. Magnetic properties of nickel nanowires decorated with cobalt nanoparticles fabricated by two step electrochemical deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Maaz, K., E-mail: maaz@impcas.ac.cn [Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Nanomaterials Research Group, Physics Division, PINSTECH, Nilore, 45650, Islamabad (Pakistan); Duan, J.L. [Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Karim, S. [Nanomaterials Research Group, Physics Division, PINSTECH, Nilore, 45650, Islamabad (Pakistan); Chen, Y.H.; Yao, H.J.; Mo, D.; Sun, Y.M. [Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Liu, J., E-mail: j.liu@impcas.ac.cn [Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China)

    2016-10-01

    We demonstrate fabrication and magnetic characterization of novel nanostructures composed of Ni nanowires decorated with Co nanoparticles by two step etching and electrochemical deposition in polycarbonate template. Structural analysis confirmed the formation of nickel nanowires with diameter of 62 nm which are surrounded by cobalt nanoparticles of about 15 nm in diameter. By electron microscopy analyses it is evident that the nanoparticles are distributed on the surface of the nanowires. Analysis of magnetization data indicates that ferromagnetic Ni nanowires exhibit an easy axis of magnetization parallel to the wire long-axis while the angular dependence of coercivity indicates that magnetization reversal occurs through the curling process in these nanowires. An exchange bias accompanied by vertical shift in magnetization was observed below ∼20 K, measured under a cooling field of 1 kOe, which is attributed to the spin interactions between the spin-glass like surface layer and ferromagnetic core of the nanowires and nanoparticles. - Highlights: • Co-decorated Ni nanowires were fabricated by two-step electrodeposition technique. • The nanoparticles are distributed on the surface of nanowires. • Magnetization reversal occurs through the curling process in the nanowires. • Temperature dependent coercivity follows thermal activation model.

  20. Uniaxial Magnetization Performance of Textured Fe Nanowire Arrays Electrodeposited by a Pulsed Potential Deposition Technique

    Science.gov (United States)

    Neetzel, C.; Ohgai, T.; Yanai, T.; Nakano, M.; Fukunaga, H.

    2017-11-01

    Textured ferromagnetic Fe nanowire arrays were electrodeposited using a rectangular-pulsed potential deposition technique into anodized aluminum oxide nanochannels. During the electrodeposition of Fe nanowire arrays at a cathodic potential of - 1.2 V, the growth rate of the nanowires was ca. 200 nm s-1. The aspect ratio of Fe nanowires with a diameter of 30 ± 5 nm reached ca. 2000. The long axis of Fe nanowires corresponded with the direction when a large overpotential during the on-time pulse was applied, whereas it orientated to the direction under the potentiostatic condition with a small overpotential. By shifting the on-time cathode potential up to - 1.8 V, the texture coefficient for the (200) plane, TC200, reached up to 1.94. Perpendicular magnetization performance was observed in Fe nanowire arrays. With increasing TC200, the squareness of Fe nanowire arrays increased up to 0.95 with the coercivity maintained at 1.4 kOe at room temperature. This research result has opened a novel possibility of Fe nanowire arrays that can be applied for a new permanent magnetic material without rare-earth metals.

  1. Organo-layered double hydroxides composite thin films deposited by laser techniques

    Energy Technology Data Exchange (ETDEWEB)

    Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Matei, A.; Dumitru, M.; Stokker-Cheregi, F.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest 030018 (Romania); Raditoiu, V.; Corobea, M.C. [National R.& D. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021 Bucharest (Romania)

    2016-06-30

    Highlights: • PLD and MAPLE was successfully used to produce organo-layered double hydroxides. • The organic anions (dodecyl sulfate-DS) were intercalated in co-precipitation step. • Zn2.5Al-LDH (Zn/Al = 2.5) and Zn2.5Al-DS thin films obtained in this work could be suitable for further applications as hydrophobic surfaces. - Abstract: We used laser techniques to create hydrophobic thin films of layered double hydroxides (LDHs) and organo-modified LDHs. A LDH based on Zn-Al with Zn{sup 2+}/Al{sup 3+} ratio of 2.5 was used as host material, while dodecyl sulfate (DS), which is an organic surfactant, acted as guest material. Pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) were employed for the growth of the films. The organic anions were intercalated in co-precipitation step. The powders were subsequently used either as materials for MAPLE, or they were pressed and used as targets for PLD. The surface topography of the thin films was investigated by atomic force microscopy (AFM), the crystallographic structure of the powders and films was checked by X-ray diffraction. FTIR spectroscopy was used to evidence DS interlayer intercalation, both for powders and the derived films. Contact angle measurements were performed in order to establish the wettability properties of the as-prepared thin films, in view of functionalization applications as hydrophobic surfaces, owing to the effect of DS intercalation.

  2. Improved Understanding of Implosion Symmetry through New Experimental Techniques Connecting Hohlraum Dynamics with Laser Beam Deposition

    Science.gov (United States)

    Ralph, Joseph; Salmonson, Jay; Dewald, Eduard; Bachmann, Benjamin; Edwards, John; Graziani, Frank; Hurricane, Omar; Landen, Otto; Ma, Tammy; Masse, Laurent; MacLaren, Stephen; Meezan, Nathan; Moody, John; Parrilla, Nicholas; Pino, Jesse; Sacks, Ryan; Tipton, Robert

    2017-10-01

    Understanding what affects implosion symmetry has been a challenge for scientists designing indirect drive inertial confinement fusion experiments on the National Ignition Facility (NIF). New experimental techniques and data analysis have been employed aimed at improving our understanding of the relationship between hohlraum dynamics and implosion symmetry. Thin wall imaging data allows for time-resolved imaging of 10 keV Au l-band x-rays providing for the first time on the NIF, a spatially resolved measurement of laser deposition with time. In the work described here, we combine measurements from the thin wall imaging with time resolved views of the interior of the hohlraum. The measurements presented are compared to hydrodynamic simulations as well as simplified physics models. The goal of this work is to form a physical picture that better explains the relationship of the hohlraum dynamics and capsule ablator on laser beam propagation and implosion symmetry. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under contract DE-AC52-07NA27344.

  3. Al2O3 Coatings on Magnesium Alloy Deposited by the Fluidized Bed (FB Technique

    Directory of Open Access Journals (Sweden)

    Gabriele Baiocco

    2018-01-01

    Full Text Available Magnesium alloys are widely employed in several industrial domains for their outstanding properties. They have a high strength-weight ratio, with a density that is lower than aluminum (33% less, and feature good thermal properties, dimensional stability, and damping characteristics. However, they are vulnerable to oxidation and erosion-corrosion phenomena when applied in harsh service conditions. To avoid the degradation of magnesium, several coating methods have been presented in the literature; however, all of them deal with drawbacks that limit their application in an industrial environment, such as environmental pollution, toxicity of the coating materials, and high cost of the necessary machinery. In this work, a plating of Al2O3 film on a magnesium alloy realized by the fluidized bed (FB technique and using alumina powder is proposed. The film growth obtained through this cold deposition process is analyzed, investigating the morphology as well as tribological and mechanical features and corrosion behavior of the plated samples. The resulting Al2O3 coatings show consistent improvement of the tribological and anti-corrosive performance of the magnesium alloy.

  4. Al₂O₃ Coatings on Magnesium Alloy Deposited by the Fluidized Bed (FB) Technique.

    Science.gov (United States)

    Baiocco, Gabriele; Rubino, Gianluca; Tagliaferri, Vincenzo; Ucciardello, Nadia

    2018-01-09

    Magnesium alloys are widely employed in several industrial domains for their outstanding properties. They have a high strength-weight ratio, with a density that is lower than aluminum (33% less), and feature good thermal properties, dimensional stability, and damping characteristics. However, they are vulnerable to oxidation and erosion-corrosion phenomena when applied in harsh service conditions. To avoid the degradation of magnesium, several coating methods have been presented in the literature; however, all of them deal with drawbacks that limit their application in an industrial environment, such as environmental pollution, toxicity of the coating materials, and high cost of the necessary machinery. In this work, a plating of Al₂O₃ film on a magnesium alloy realized by the fluidized bed (FB) technique and using alumina powder is proposed. The film growth obtained through this cold deposition process is analyzed, investigating the morphology as well as tribological and mechanical features and corrosion behavior of the plated samples. The resulting Al₂O₃ coatings show consistent improvement of the tribological and anti-corrosive performance of the magnesium alloy.

  5. Characterizations of multilayer ZnO thin films deposited by sol-gel spin coating technique

    Directory of Open Access Journals (Sweden)

    M.I. Khan

    Full Text Available In this work, zinc oxide (ZnO multilayer thin films are deposited on glass substrate using sol-gel spin coating technique and the effect of these multilayer films on optical, electrical and structural properties are investigated. It is observed that these multilayer films have great impact on the properties of ZnO. X-ray Diffraction (XRD confirms that ZnO has hexagonal wurtzite structure. Scanning Electron Microscopy (SEM showed the crack-free films which have uniformly distributed grains structures. Both micro and nano particles of ZnO are present on thin films. Four point probe measured the electrical properties showed the decreasing trend between the average resistivity and the number of layers. The optical absorption spectra measured using UV–Vis. showed the average transmittance in the visible region of all films is 80% which is good for solar spectra. The performance of the multilayer as transparent conducting material is better than the single layer of ZnO. This work provides a low cost, environment friendly and well abandoned material for solar cells applications. Keywords: Multilayer films, Semiconductor, ZnO, XRD, SEM, Optoelectronic properties

  6. Deposition of corrosion products from dowels on human dental root surfaces measured with proton microprobe technique

    International Nuclear Information System (INIS)

    Brune, D.; Brunell, G.; Lindh, U.

    1982-01-01

    Distribution of copper, mercury and zinc on human teeth root surfaces adjacent to dowels of gold alloy or brass as well as dowels of brass in conjunction with an amalgam crown has been measured with a proton microprobe using PIXE techniques. Upper limits of the contents of gold and silver on the root surfaces were established. Pronounced concentration profiles of copper and zinc were observed on the root surfaces of teeth prepared with dowels of brass. The dowel of gold alloy revealed only zinc deposition. The major part of copper on the root surfaces is assumed to arise from corrosion of the dowels, and has been transported to the surface by diffusion through the dential tubuli. Zinc in the volume analysed is a constituent of dentin tissue as well as a corrosion product of the brass dowel. Part of the zinc level could also be ascribed to erosion of the zinc phosphate cement matrix. The volumes analysed were (25 x 25 x 25)μm 3 . The levels of copper, mercury and zinc on the tooth root surfaces attained values up to about 200, 20 and 600 ppm, respectively. (orig.)

  7. Deposition of corrosion products from dowels on human dental root surfaces measured with proton microprobe technique

    Science.gov (United States)

    Brune, D.; Brunell, G.; Lindh, U.

    1982-06-01

    Distribution of copper, mercury and zinc on human teeth root surfaces adjacent to dowels of gold alloy or brass as well as dowels of brass in conjunction with an amalgam crown has been measured with a proton microprobe using PIXE techniques. Upper limits of the contents of gold and silver on the root surfaces were established. Pronounced concentration profiles of copper and zinc were observed on the root surfaces of teeth prepared with dowels of brass. The dowel of gold alloy revealed only zinc deposition. The major part of copper on the root surfaces is assumed to arise from corrosion of the dowels, and has been transported to the surface by diffusion through the dential tubuli. Zinc in the volume analysed is a constituent of dentin tissue as well as a corrosion product of the brass dowel. Part of the zinc level could also be ascribed to erosion of the zinc phosphate cement matrix. The volumes analysed were (25×25×25)μm 3. The levels of copper, mercury and zinc on the tooth root surfaces attained values up to about 200, 20 and 600 ppm, respectively.

  8. All-MOCVD-grown BH laser on P-InP substrates

    Science.gov (United States)

    Nishimura, Tadashi; Ishimura, E.; Nakajima, Yasuo; Tada, Hitoshi; Kimura, T.; Ohkura, Y.; Goto, Katsuhiko; Omura, Etsuji; Aiga, Masao

    1993-07-01

    A very low cw threshold current of 2.5 mA ( 25 degree(s)C) and 8.0 mA ( 80 degree(s)C) with high reliability has been realized in the all-MOCVD grown BH lasers on p-InP substrates. A strained MQW active layer of 1.3 micrometers wavelength and the precise carrier confinement buried structure by MOCVD is employed for the BH lasers. The excellent potential of long lifetime of the all-MOCVD grown laser has also been confirmed. After the high temperature and the high current (100 degree(s)C, 200 mA) aging test, no significant degradation is observed which is comparable with the well-established LPE grown lasers. The BH laser is also operating stably over 3700 hrs under the APC condition of 50 degree(s)C, 10 mW. Finally, an extremely uniform 10-element all-MOCVD grown LD array is demonstrated, which has the threshold current uniformity of 2.4 +/- 0.1 mA ( 25 degree(s)C) and 9.2 +/- 0.2 mA ( 80 degree(s)C). The growth mechanism in the MOCVD is also described.

  9. Investigation of (Y,Gd)Ba2Cu3O7-x grown by MOCVD on a simplified IBAD MgO template

    International Nuclear Information System (INIS)

    Stan, L; Holesinger, T G; Maiorov, B; Civale, L; DePaula, R F; Jia, Q X; Chen, Y; Xiong, X; Selvamanickam, V

    2010-01-01

    We have used an ion beam sputtered Y 2 O 3 -Al 2 O 3 (YALO) composite to simplify the architecture of high temperature superconducting (HTS) coated conductors (CCs) based on a IBAD MgO template. By implementing YALO, we have reduced the total non-superconducting layers between the polycrystalline metal substrate and the superconducting film from five (the standard architecture) to four. Well textured (Y,Gd)Ba 2 Cu 3 O 7-x ((Y, Gd)BCO) films have been successfully grown by MOCVD on this simplified template. The microstructural characterization revealed that all layers are continuous and uniform with sharp and clean interfaces. Additionally, the YALO maintained its amorphous nature after the deposition of the superconductive layer, which is a plus in terms of its efficiency as a diffusion barrier. The achievement of a self-field critical current of 230 A cm -1 at 75.5 K is another proof of the effectiveness of YALO as a diffusion barrier and nucleation seed for the MgO. The transport properties under an applied magnetic field of MOCVD grown (Y, Gd)BCO on LMO buffered MgO/YALO/Ni-alloy are comparable with those of (Y, Gd)BCO on a standard architecture, thus demonstrating good compatibility between the simplified template with the MOCVD grown (Y, Gd)BCO. The use of a single composite YALO layer instead of individual layers of Y 2 O 3 and Al 2 O 3 for the large scale fabrication of HTS CCs based on IBAD MgO provides advantages such as potentially reduced cost due to the reduced number of fabrication steps.

  10. Investigation of (Y,Gd)Ba{sub 2}Cu{sub 3}O{sub 7-x} grown by MOCVD on a simplified IBAD MgO template

    Energy Technology Data Exchange (ETDEWEB)

    Stan, L; Holesinger, T G; Maiorov, B; Civale, L; DePaula, R F; Jia, Q X [Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545 (United States); Chen, Y [SuperPower, Incorporated, 450 Duane Avenue, Schenectady, NY 12304 (United States); Xiong, X; Selvamanickam, V [Mechanical Engineering Department, University of Houston, Houston, TX 77204-4006 (United States)

    2010-01-15

    We have used an ion beam sputtered Y{sub 2}O{sub 3}-Al{sub 2}O{sub 3} (YALO) composite to simplify the architecture of high temperature superconducting (HTS) coated conductors (CCs) based on a IBAD MgO template. By implementing YALO, we have reduced the total non-superconducting layers between the polycrystalline metal substrate and the superconducting film from five (the standard architecture) to four. Well textured (Y,Gd)Ba{sub 2}Cu{sub 3}O{sub 7-x} ((Y, Gd)BCO) films have been successfully grown by MOCVD on this simplified template. The microstructural characterization revealed that all layers are continuous and uniform with sharp and clean interfaces. Additionally, the YALO maintained its amorphous nature after the deposition of the superconductive layer, which is a plus in terms of its efficiency as a diffusion barrier. The achievement of a self-field critical current of 230 A cm{sup -1} at 75.5 K is another proof of the effectiveness of YALO as a diffusion barrier and nucleation seed for the MgO. The transport properties under an applied magnetic field of MOCVD grown (Y, Gd)BCO on LMO buffered MgO/YALO/Ni-alloy are comparable with those of (Y, Gd)BCO on a standard architecture, thus demonstrating good compatibility between the simplified template with the MOCVD grown (Y, Gd)BCO. The use of a single composite YALO layer instead of individual layers of Y{sub 2}O{sub 3} and Al{sub 2}O{sub 3} for the large scale fabrication of HTS CCs based on IBAD MgO provides advantages such as potentially reduced cost due to the reduced number of fabrication steps.

  11. Yb2Si2O7 Environmental Barrier Coatings Deposited by Various Thermal Spray Techniques: A Preliminary Comparative Study

    Science.gov (United States)

    Bakan, Emine; Marcano, Diana; Zhou, Dapeng; Sohn, Yoo Jung; Mauer, Georg; Vaßen, Robert

    2017-08-01

    Dense, crack-free, uniform, and well-adhered environmental barrier coatings (EBCs) are required to enhance the environmental durability of silicon (Si)-based ceramic matrix composites in high pressure, high gas velocity combustion atmospheres. This paper represents an assessment of different thermal spray techniques for the deposition of Yb2Si2O7 EBCs. The Yb2Si2O7 coatings were deposited by means of atmospheric plasma spraying (APS), high-velocity oxygen fuel spraying (HVOF), suspension plasma spraying (SPS), and very low-pressure plasma spraying (VLPPS) techniques. The initial feedstock, as well as the deposited coatings, were characterized and compared in terms of their phase composition. The as-sprayed amorphous content, microstructure, and porosity of the coatings were further analyzed. Based on this preliminary investigation, the HVOF process stood out from the other techniques as it enabled the production of vertical crack-free coatings with higher crystallinity in comparison with the APS and SPS techniques in atmospheric conditions. Nevertheless, VLPPS was found to be the preferred process for the deposition of Yb2Si2O7 coatings with desired characteristics in a controlled-atmosphere chamber.

  12. Novel Geochemical Techniques Integrated In Exploration for Uranium Deposits at Depth

    International Nuclear Information System (INIS)

    Kyser, Kurt

    2014-01-01

    Recent results in the use of geochemistry in detecting deep uranium deposits: (1) Map element distributions in and around deposits to assess the total chemical environment associated with the deposit, (2) Use element tracing with isotopic compositions in surface media to detect specific components from uranium deposits at depth, (3) Capitalize on element mobility across the geosphere-biosphere interface to enhance exploration using select media, (4) Geochemical data from drill core or surface media can enhance target identification when integrated with geophysical data.

  13. Driving Down HB-LED Costs. Implementation of Process Simulation Tools and Temperature Control Methods of High Yield MOCVD Growth

    Energy Technology Data Exchange (ETDEWEB)

    Quinn, William [Veeco Process Equipment, Inc., Plainview, NY (United States)

    2012-04-30

    . Programmatically, improvements made in Phase I are applied to developments of Phase II when applicable. Phase three is the culmination of the individual tasks from both phases one and two applied to proposed production platforms. We selectively combine previously demonstrated tasks and other options to develop a high-volume production-worthy MOCVD system demonstrating >3x throughput, 1.3x capital efficiency, and 0.7x cost of ownership. In a parallel demonstration we validate the concept of an improved, larger deposition system which utilizes the predictive modeling of chemistry-based flow analysis and extensions of the improvements demonstrated on the current platforms. This validation includes the build and testing of a prototype version of the hardware and demonstration of 69% reduction in the cost of ownership. Also, in this phase we present a stand-alone project to develop a high-temperature system which improves source efficiency by 30% while concurrently increasing growth rate by 1.3x. The material quality is held to the same material quality specifications of our existing baseline processes. The merits of other line item tasks in phase three are discussed for inclusion on next-generation platforms.

  14. Studies of CdS/CdTe interface: Comparison of CdS films deposited by close space sublimation and chemical bath deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jun-feng, E-mail: pkuhjf@bit.edu.cn [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); School of Physics, Beijing Institute of Technology, Beijing 100081 (China); Fu, Gan-hua; Krishnakumar, V.; Schimper, Hermann-Josef [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Jaegermann, Wolfram [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Besland, M.P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

    2015-05-01

    The CdS layers were deposited by two different methods, close space sublimation (CSS) and chemical bath deposition (CBD) technique. The CdS/CdTe interface properties were investigated by transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). The TEM images showed a large CSS-CdS grain size in the range of 70-80 nm. The interface between CSS-CdS and CdTe were clear and sharp, indicating an abrupt hetero-junction. On the other hand, CBD-CdS layer had much smaller grain size in the 5-10 nm range. The interface between CBD-CdS and CdTe was not as clear as CSS-CdS. With the stepwise coverage of CdTe layer, the XPS core levels of Cd 3d and S 2p in CSS-CdS had a sudden shift to lower binding energies, while those core levels shifted gradually in CBD-CdS. In addition, XPS depth profile analyses indicated a strong diffusion in the interface between CBD-CdS and CdTe. The solar cells prepared using CSS-CdS yielded better device performance than the CBD-CdS layer. The relationships between the solar cell performances and properties of CdS/CdTe interfaces were discussed. - Highlights: • Studies of CdS deposited by close space sublimation and chemical bath deposition • An observation of CdS/CdTe interface by transmission electron microscope • A careful investigation of CdS/CdTe interface by X ray photoelectron spectra • An easier diffusion at the chemical bath deposition CdS and CdTe interface.

  15. Industrial implementation of plasma deposition using the expanding thermal plasma technique

    NARCIS (Netherlands)

    Sanden, van de M.C.M.; Oever, van den P.J.; Creatore, M.; Schaepkens, M.; Miebach, T.; Iacovangelo, C.D.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Kessels, W.M.M.

    2004-01-01

    Two successful industrial implementations of the expanding thermal plasma setup, a novel plasma source, obtaining high deposition rate are discussed. The Ar/O2/hexamethyldisiloxane and Ar/O2/octamethyl-cyclosiloxane-fed expanding thermal plasma setup is used to deposit scratch resistant silicone

  16. MOCVD process technology for affordable, high-yield, high-performance MESFET structures. Phase 3: MIMIC

    Science.gov (United States)

    1993-01-01

    Under the MIMIC Program, Spire has pursued improvements in the manufacturing of low cost, high quality gallium arsenide MOCVD wafers for advanced MIMIC FET applications. As a demonstration of such improvements, Spire was tasked to supply MOCVD wafers for comparison to MBE wafers in the fabrication of millimeter and microwave integrated circuits. In this, the final technical report for Spire's two-year MIMIC contract, we report the results of our work. The main objectives of Spire's MIMIC Phase 3 Program, as outlined in the Statement of Work, were as follows: Optimize the MOCVD growth conditions for the best possible electrical and morphological gallium arsenide. Optimization should include substrate and source qualification as well as determination of the optimum reactor growth conditions; Perform all work on 75 millimeter diameter wafers, using a reactor capable of at least three wafers per run; and Evaluate epitaxial layers using electrical, optical, and morphological tests to obtain thickness, carrier concentration, and mobility data across wafers.

  17. Ac conductivity and dielectric spectroscopy studies on tin oxide thin films formed by spray deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barış, Behzad, E-mail: behzadbaris@gmail.com

    2014-04-01

    Au/tin oxide/n-Si (1 0 0) structure has been created by forming a tin oxide (SnO{sub 2}) on n-type Si by using the spray deposition technique. The ac electrical conductivity (σ{sub ac}) and dielectric properties of the structure have been investigated between 30 kHz and 1 MHz at room temperature. The values of ε', ε″, tanδ, σ{sub ac}, M' and M″ were determined as 1.404, 0.357, 0.253, 1.99×10{sup −7} S/cm, 0.665 and 0.168 for 1 MHz and 6.377, 6.411, 1.005, 1.07×10{sup −7} S/cm, 0.077 and 0.078 for 30 kHz at zero bias, respectively. These changes were attributed to variation of the charge carriers from the interface traps located between semiconductor and metal in the band gap. It is concluded that the values of the ε', ε″ and tanδ increase with decreasing frequency while a decrease is seen in σ{sub ac} and the real (M') and imaginary (M″) components of the electrical modulus. The M″ parameter of the structure has a relaxation peak as a function of frequency for each examined voltage. The relaxation time of M″(τ{sub M″}) varies from 0.053 ns to 0.018 ns with increasing voltage. The variation of Cole–Cole plots of the sample shows that there is one relaxation.

  18. A comparative study of ultraviolet photoconductivity relaxation in zinc oxide (ZnO) thin films deposited by different techniques

    International Nuclear Information System (INIS)

    Yadav, Harish Kumar; Gupta, Vinay

    2012-01-01

    Photoresponse characteristics of ZnO thin films deposited by three different techniques namely rf diode sputtering, rf magnetron sputtering, and electrophoretic deposition has been investigated in the metal-semiconductor-metal (MSM) configuration. A significant variation in the crystallinity, surface morphology, and photoresponse characteristics of ZnO thin film with change in growth kinetics suggest that the presence of defect centers and their density govern the photodetector relaxation properties. A relatively low density of traps compared to the true quantum yield is found very crucial for the realization of practical ZnO thin film based ultraviolet (UV) photodetector.

  19. A comparative study of ultraviolet photoconductivity relaxation in zinc oxide (ZnO) thin films deposited by different techniques

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Harish Kumar; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India)

    2012-05-15

    Photoresponse characteristics of ZnO thin films deposited by three different techniques namely rf diode sputtering, rf magnetron sputtering, and electrophoretic deposition has been investigated in the metal-semiconductor-metal (MSM) configuration. A significant variation in the crystallinity, surface morphology, and photoresponse characteristics of ZnO thin film with change in growth kinetics suggest that the presence of defect centers and their density govern the photodetector relaxation properties. A relatively low density of traps compared to the true quantum yield is found very crucial for the realization of practical ZnO thin film based ultraviolet (UV) photodetector.

  20. MOCVD growth of CdTe and HgTe on GaAs in a vertical, high-speed, rotating-disc reactor

    International Nuclear Information System (INIS)

    Tompa, G.S.; Nelson, C.R.; Reinert, P.D.; Saracino, M.A.; Terrill, L.A.; Colter, P.C.

    1989-01-01

    The metalorganic chemical vapor deposition (MOCVD) growth of CdTe and HgTe on GaAs (111) and (100) substrates in a vertical, high-speed, rotating-disc reactor was investigated. A range of total reactor pressure, carrier gas flow rate, chemical concentrations, deposition temperature, and rotation rate have been investigated in an attempt to optimize growth conditions. Diisopropyltelluride (DIPTe) and Dimethylcadmium (DMCd) were used as growth precursors. Thickness uniformity varies less than +/- 1.5% over 50 mm diameter wafers. Films having FWHM X-ray rocking curves less than 90 arcsec were obtained on GaAs (111) substrates. The films have excellent surface morphology, exhibiting less than 5 x 10 4 cm - 2 orange peel dents which are much-lt 1 μm in size. An elemental mercury source was added to the growth system. Initial results for the growth of HgTe and HgCdTe are discussed

  1. Heating effect of substrate of pulsed laser ablation deposition technique towards the orientation of carbon microstructure

    International Nuclear Information System (INIS)

    Choy, L.S.; Irmawati Ramli; Noorhana Yahya; Abdul Halim Shaari

    2009-01-01

    Full text: Carbon thin film has been successfully deposited by second harmonic Nd:YAG pulsed laser ablation deposition, PLAD. The topology and morphology of the deposited layers was studied by scanning electron microscopy (SEM) whereas emission dispersion X-ray (EDX) was used to determine the existence of elements that constitutes the microstructure. Substrate heated at 500 degree Celsius during the laser ablation showed the most homogenous lollipop microstructure as compared to mainly pillars of microstructure ablated at lower substrate temperature. It is found that this also avoid further diffusion of carbon into catalyst in forming iron carbide. (author)

  2. Influence of solution deposition rate on properties of V{sub 2}O{sub 5} thin films deposited by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Abd–Alghafour, N. M., E-mail: na2013bil@gmail.com [Iraqi Ministry of Education, Anbar (Iraq); Ahmed, Naser M.; Hassan, Zai; Mohammad, Sabah M. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, University Sains Malaysia,11800 Penang (Malaysia)

    2016-07-19

    Vanadium oxide (V{sub 2}O{sub 5}) thin films were deposited on glass substrates by using a cost-efficient spray pyrolysis technique. The films were grown at 350° through thermal decomposition of VCl{sub 3} in deionized water with different solution spray rates. The high resolution X-ray diffraction results revealed the formation of nanocrystalline films having orthorhombic structures with preferential orientation along (101) direction. The spray rate influenced the surface morphology and crystallite size of the films. The crystallite size was found to increase whereas the micro-strain was decreased by increasing the spray deposition rates. The increase in crystallite size and decrease in the macrostrain resulted in an improvement in the films’ crystallinity. The UV-Visible spectroscopy analysis indicated that the average transmittance of all films lies in the range 75-80 %. The band gap of V{sub 2}O{sub 5} film was decreased from 2.65 to 2.46 eV with increase of the spray deposition rate from 5 ml/min to 10 ml/min. first, second, and third level headings (first level heading).

  3. Properties of alumina films prepared by metal-organic chemical vapour deposition at atmospheric pressure in hte presence of small amounts of water

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Haanappel, V.A.C.; van Corbach, H.D.; Rem, J.B.; Fransen, T.; Gellings, P.J.

    1995-01-01

    Thin alumina films were deposited on stainless steel, type AISI 304. The deposition process was carried out in nitrogen with low partial pressures of water (0–2.6 × 10−2 kPa (0−0.20 mmHg)) by metal-organic chemical vapour deposition (MOCVD) with aluminium-tri-sec-butoxide (ATSB) as the precursor.

  4. Efficient removal of UDMH from dilute nitride MOCVD exhaust streams

    Science.gov (United States)

    Pahle, Jörg; Czerniak, Mike; Seeley, Andy; Baker, Derek

    2004-12-01

    Unsymmetrical dimethyl hydrazine (UDMH) (CH 3) 2N 2H 2 is often used in the deposition of dilute nitride semiconductors because it provides a source of nitrogen with a low thermal decomposition temperature (Temperature-dependent carrier lifetime in GaNAs using resonant-coupled photoconductive decay, NCPV Program Review Meeting, Lakewood, Colorado, 14-17 October, 2001). The problems with using this material, however, are its significant toxicity (0.01 ppm compared to ammonia's 25 ppm) and also the fact that it blocks the action of conventional dosed wet scrubbers sometimes used on nitride applications, resulting in diminished efficiency in removing arsine (the source of arsenic), and arsine being similarly toxic (TLV of 0.05 ppm). Efficient removal of UDMH, AsH 3 and hydrogen (which, though not toxic poses a potential safety hazard) by means of a combined thermal oxidation reaction and wet scrubber in series is described at input gas flow rates exceeding those typically encountered in practice. The detection technique employed was Fourier transform infra red spectroscopy (FTIR), and the calibration and resolution techniques will be described. For input UDMH flows of up to 445 sccm (i.e. 1.85×10 -2 mol/min), destructive reaction efficiencies (DREs) of >99.9% were demonstrated, corresponding to the background detection resolution of 0.4 ppm.

  5. Evaluation of Co-rich manganese deposits by image analysis and photogrammetric techniques

    Digital Repository Service at National Institute of Oceanography (India)

    Yamazaki, T.; Sharma, R.; Tsurusaki, K.

    Stereo-seabed photographs of Co-rich manganese deposits on a mid-Pacific seamount, were analysed using an image analysis software for coverage estimation and size classification of nodules, and a photogrammetric software for calculation of height...

  6. Atmospheric deposition of trace elements around Ulan Bator city studied by moss and lichen biomonitoring technique and INAA

    International Nuclear Information System (INIS)

    Ganbold, G.; Gehrbish, Sh.; Tsehndehehkhuu, Ts.; Gundorina, S.F.; Frontas'eva, M.V.; Ostrovnaya, T.M.; Pavlov, S.S.

    2005-01-01

    For the first time the moss and lichen biomonitoring technique has been applied to air pollution in Mongolia (Ulan-Bator, the capital city). INAA at the IBR-2 reactor has made it possible to determine the content of 35 elements in moss and lichen biomonitors. Samples collected at sites located 10-15 km from the center of Ulan-Bator were analyzed by Instrumental Neutron Activation Analysis (INAA) using epithermal neutrons. The mosses (Rhytidium rugosum, Thuidium abietinum, Entodon concinnus) and lichens (Cladonia stellaris, Parmelia separata) were used to study the atmospheric deposition of trace elements. It was shown that the suggested types of mosses could be used as suitable biomonitors to estimate the concentration levels of heavy metals and trace elements in Ulan-Bator atmospheric deposition. The results are compared to the data of atmospheric deposition of some European countries

  7. Atmospheric Deposition of Trace Elements Around Ulan-Bator City Studied by Moss and Lichen Biomonitoring Technique and INAA

    CERN Document Server

    Ganbold, G; Gundorina, S F; Frontasyeva, M V; Ostrovnaya, T M; Pavlov, S S; Tsendeekhuu, T

    2005-01-01

    For the first time the moss and lichen biomonitoring technique has been applied to air pollution in Mongolia (Ulan-Bator, the capital city). INAA at the IBR-2 reactor has made it possible to determine the content of 35 elements in moss and lichen biomonitors. Samples collected at sites located 10-15 km from the center of Ulan-Bator were analyzed by Instrumental Neutron Activation Analysis (INAA) using epithermal neutrons. The mosses (\\textit{Rhytidium rugosum}, \\textit{Thuidium abietinum}, \\textit{Entodon concinnus}) and lichens (\\textit{Cladonia stellaris}, \\textit{Parmelia separata}) were used to study the atmospheric deposition of trace elements. It was shown that the suggested types of mosses could be used as suitable biomonitors to estimate the concentration levels of heavy metals and trace elements in Ulan-Bator atmospheric deposition. The results are compared to the data of atmospheric deposition of some European countries.

  8. Suppression of hydrogenated carbon film deposition by scavenger techniques and their application to the tritium inventory control of fusion devices

    International Nuclear Information System (INIS)

    Tabares, F.L.; Tafalla, D.; Tanarro, I.; Herrero, V.J.; Islyaikin, A.; Maffiotte, C.

    2002-01-01

    The well-known radical and ion scavenger techniques of application in amorphous hydrogenated carbon film deposition studies are investigated in relation to the mechanism of tritium and deuterium co-deposition in carbon-dominated fusion devices. A particularly successful scheme results from the injection of nitrogen into methane/hydrogen plasmas for conditions close to those prevailing in the divertor region of present fusion devices. A complete suppression of the a-C : H film deposition has been achieved for N 2 /CH 4 ratios close to one in methane (5%)/hydrogen DC plasma. The implications of these findings in the tritium retention control in future fusion reactors are addressed. (author). Letter-to-the-editor

  9. Preparation of SmBCO layer for the surface optimization of GdYBCO film by MOCVD process based on a simple self-heating technology

    Science.gov (United States)

    Zhao, Ruipeng; Zhang, Fei; Liu, Qing; Xia, Yudong; Lu, Yuming; Cai, Chuanbing; Tao, Bowan; Li, Yanrong

    2018-07-01

    The MOCVD process was adopted to grow the REBa2Cu3O7-δ ((REBCO), RE = rare earth elements) films on the LaMnO3 (LMO) templates. Meanwhile, the LMO-template tapes are heated by the joule effect after applying a heating current through the Hastelloy metal substrates. The surface of GdYBCO films prepared by MOCVD method is prone to form outgrowths. So the surface morphology of GdYBCO film is optimized by depositing the SmBCO layer, which is an important process method for the preparation of high-quality multilayer REBCO films. At last, the GdYBCO/SmBCO/GdYBCO multilayer films were successfully prepared on the LMO templates based on the simple self-heating method. It is demonstrated that the GdYBCO surface was well improved by the characterization analysis of scanning electron microscope. And the Δω of REBCO (005) and Δφ of REBCO (103), which were performed by an X-ray diffraction system, are respectively 1.3° and 3.3° What's more, the critical current density (Jc) has been more than 3 MA/cm2 (77 K, 0 T) and the critical current (Ic) basically shows a trend of good linear increase with the increase of the number of REBCO layers.

  10. Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN

    Science.gov (United States)

    Chan, Silvia H.; Bisi, Davide; Liu, Xiang; Yeluri, Ramya; Tahhan, Maher; Keller, Stacia; DenBaars, Steven P.; Meneghini, Matteo; Mishra, Umesh K.

    2017-11-01

    This paper investigates the effects of the oxygen precursor flow supplied during metalorganic chemical vapor deposition (MOCVD) of Al2O3 films on the forward bias behavior of Al2O3/GaN metal-oxide-semiconductor capacitors. The low oxygen flow (100 sccm) delivered during the in situ growth of Al2O3 on GaN resulted in films that exhibited a stable capacitance under forward stress, a lower density of stress-generated negative fixed charges, and a higher dielectric breakdown strength compared to Al2O3 films grown under high oxygen flow (480 sccm). The low oxygen grown Al2O3 dielectrics exhibited lower gate current transients in stress/recovery measurements, providing evidence of a reduced density of trap states near the GaN conduction band and an enhanced robustness under accumulated gate stress. This work reveals oxygen flow variance in MOCVD to be a strategy for controlling the dielectric properties and performance.

  11. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

    Science.gov (United States)

    Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

    2013-04-07

    We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

  12. Preparation of YBa2Cu3O7 films by low pressure MOCVD using liquid solution sources

    International Nuclear Information System (INIS)

    Weiss, F.; Froehlich, K.; Haase, R.; Labeau, M.; Selbmann, D.; Senateur, J.P.; Thomas, O.

    1993-01-01

    A hybrid low pressure MOCVD process is described for reproducible preparation of superconducting thin films of YBa 2 Cu 3 O 7 . The process uses a single solution source of Y, Ba, and Cu β-diketonates dissolved in suitable organic solvents. This liquid precursor is atomized using an ultrasonic aerosol generator and transported as small droplets (∼1μm) into a CVD reactor where solvent and precursor are first evaporated before deposition takes place at low pressure on heated substrates in a cold wall geometry. This process allows, with stable evaporation rates for all three precursors, to grow in-situ superconducting films with constant composition from film to film. Thin and thick films with high critical temperatures and critical currents have been obtained (Tc>80K, Jc>10 4 A/cm 2 at 77K in self field) which are highly c-axis oriented. Experimental details of this new process are described and the effects of different process parameters are studied in order to improve the quality of the deposited layers. (orig.)

  13. Stoichiometry-, phase- and orientation-controlled growth of polycrystalline pyrite (FeS 2) thin films by MOCVD

    Science.gov (United States)

    Höpfner, C.; Ellmer, K.; Ennaoui, A.; Pettenkofer, C.; Fiechter, S.; Tributsch, H.

    1995-06-01

    The growth process of polycrystalline pyrite thin films employing low pressure metalorganic chemical vapor deposition (LP-MOCVD) in a vertical cold wall reactor has been investigated. Iron pentacarbonyl (IPC) and t-butyldisulfide (TBDS) were utilized as precursors. Study of the growth rate as a function of temperature reveals a kinetically controlled growth process with an activation energy of 73 kJ / mol over the temperature range from 250 to 400°C. From 500 to 630°C, the growth rate is mainly mass transport limited. Decomposition of the films into pyrrhotite (Fe 1 - xS) occurs at higher growth temperatures. The {S}/{Fe} ratio in the films has been controlled from 1.23 up to 2.03 by changing the TBDS partial pressure. With increasing deposition temperature, the crystallites in the films show the tendency to grow [100]-oriented on amorphous substrates at a growth rate of 2.5 Å / s. The grains show a preferential orientation in the [111] direction upon lowering the growth rate down to 0.3 Å / s. Temperatures above 550°C are beneficial in enhancing the grain size in the columnar structured films up to 1.0 μm.

  14. Stoichiometry-, phase- and orientation-controlled growth of polycrystalline pyrite (FeS{sub 2}) thin films by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Hoepfner, C.; Ellmer, K.; Ennaoui, A.; Pettenkofer, C.; Fiechter, S.; Tributsch, H. [Hahn-Meitner-Institut Berlin, Abteilung Solare Energetik, Berlin (Germany)

    1995-06-01

    The growth process of polycrystalline pyrite thin films employing low pressure metalorganic chemical vapor deposition (LP-MOCVD) in a vertical cold wall reactor has been investigated. Iron pentacarbonyl (IPC) and t-butyldisulfide (TBDS) were utilized as precursors. Study of the growth rate as a function of temperature reveals a kinetically controlled growth process with an activation energy of 73 kJ/mol over the temperature range from 250 to 400C. From 500 to 630C, the growth rate is mainly mass transport limited. Decomposition of the films into pyrrhotite (Fe{sub 1-x}S) occurs at higher growth temperatures. The S/Fe ratio in the films has been controlled from 1.23 up to 2.03 by changing the TBDS partial pressure. With increasing deposition temperature, the crystallites in the films show the tendency to grow [100]-oriented on amorphous substrates at a growth rate of 2.5 A/s. The grains show a preferential orientation in the [111] direction upon lowering the growth rate down to 0.3 A/s. Temperatures above 550C are beneficial in enhancing the grain size in the columnar structured films up to 1.0 {mu}m

  15. Cauliflower hillock formation through crystallite migration of SnO2 thin films prepared on alumina substrates by using MOCVD

    International Nuclear Information System (INIS)

    Choi, Gwangpyo; Ryu, Hyunwook; Lee, Woosun; Hong, Kwangjun; Shin, Dongcharn; Park, Jinseong; Seo, Yongjin; Akbar, Sheikh A.

    2003-01-01

    Tin-oxide thin films were deposited at 375 .deg. C on α-alumina substrates by using metalorganic chemical vapor deposition (MOCVD) process. A number of hillocks were formed on the film after annealing in air at 500 .deg. C for 30 min, but fewer hillocks were formed for annealing in N 2 . The hillocks on the film and the grains on the alumina substrate were composed of crystallites. The oxygen content and the binding energy after annealing in air came to close to values for the stoichiometric SnO 2 . There was no relationship between the film thickness and the binding energy shift, but the binding energy did change with the annealing atmosphere and the oxygen content. The cauliflower hillocks on the film seem to be formed by the continuous migration of crystallites from cauliflower grains on the substrate to release the stress due to the increased oxygen content and volume. A cauliflower hillock can be grown by continuous migration of crystallites from nearby grains to the hillock.

  16. Controlling the quality of nanocrystalline silicon made by hot-wire chemical vapor deposition by using a reverse H2 profiling technique

    NARCIS (Netherlands)

    Li, H. B. T.; Franken, R.H.; Stolk, R.L.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

    2008-01-01

    Hydrogen profiling, i.e., decreasing the H2 dilution during deposition, is a well-known technique to maintain a proper crystalline ratio of the nanocrystalline (nc-Si:H) absorber layers of plasma-enhanced chemical vapor-deposited (PECVD) thin film solar cells. With this technique a large increase in

  17. Novel GIMS technique for deposition of colored Ti/TiO₂ coatings on industrial scale

    Directory of Open Access Journals (Sweden)

    Zdunek Krzysztof

    2016-03-01

    Full Text Available The aim of the present paper has been to verify the effectiveness and usefulness of a novel deposition process named GIMS (Gas Injection Magnetron Sputtering used for the flrst time for deposition of Ti/TiO₂ coatings on large area glass Substrates covered in the condition of industrial scale production. The Ti/TiO₂ coatings were deposited in an industrial System utilizing a set of linear magnetrons with the length of 2400 mm each for covering the 2000 × 3000 mm glasses. Taking into account the speciflc course of the GIMS (multipoint gas injection along the magnetron length and the scale of the industrial facility, the optical coating uniformity was the most important goal to check. The experiments on Ti/TiO₂ coatings deposited by the use of GIMS were conducted on Substrates in the form of glass plates located at the key points along the magnetrons and intentionally non-heated during any stage of the process. Measurements of the coatings properties showed that the thickness and optical uniformity of the 150 nm thick coatings deposited by GIMS in the industrial facility (the thickness differences on the large plates with 2000 mm width did not exceed 20 nm is fully acceptable form the point of view of expected applications e.g. for architectural glazing.

  18. Assessment of multiple geophysical techniques for the characterization of municipal waste deposit sites

    Science.gov (United States)

    Gaël, Dumont; Tanguy, Robert; Nicolas, Marck; Frédéric, Nguyen

    2017-10-01

    In this study, we tested the ability of geophysical methods to characterize a large technical landfill installed in a former sand quarry. The geophysical surveys specifically aimed at delimitating the deposit site horizontal extension, at estimating its thickness and at characterizing the waste material composition (the moisture content in the present case). The site delimitation was conducted with electromagnetic (in-phase and out-of-phase) and magnetic (vertical gradient and total field) methods that clearly showed the transition between the waste deposit and the host formation. Regarding waste deposit thickness evaluation, electrical resistivity tomography appeared inefficient on this particularly thick deposit site. Thus, we propose a combination of horizontal to vertical noise spectral ratio (HVNSR) and multichannel analysis of the surface waves (MASW), which successfully determined the approximate waste deposit thickness in our test landfill. However, ERT appeared to be an appropriate tool to characterize the moisture content of the waste, which is of prior information for the organic waste biodegradation process. The global multi-scale and multi-method geophysical survey offers precious information for site rehabilitation studies, water content mitigation processes for enhanced biodegradation or landfill mining operation planning.

  19. Comprehensive geophysical survey technique in exploration for deep-buried hydrothermal type uranium deposits in Xiangshan volcanic basin, China

    International Nuclear Information System (INIS)

    Ke, D.

    2014-01-01

    According to recent drilling results, uranium mineralization has been found underground more than 1000 m deep in the Xiangshan volcanic basin, in where uranium exploration has been carried out for over 50 years. This paper presents a comprehensive geophysical survey technique, including audio magnetotelluric method (AMT), high resolution ground magnetic and radon survey, which aim to prospect deep-buried and concealed uranium deposits in Xiangshan volcanic basin. Based on research and application, a comprehensive geophysical technique consisting of data acquisition, processing and interpretation has been established. Concealed rock and ore-controlling structure buried deeper than 1000 m can be detected by using this technique. Moreover, one kind of anti-interference technique of AMT survey is presented, which can eliminate the interference induced by the high-voltage power lines. Result of AMT in Xiangshan volcanic basin is demonstrated as high-low-high mode, which indicates there are three layers in geology. The upper layer with high resistivity is mainly the react of porphyroclastic lava. The middle layer with low resistivity is metamorphic schists or dellenite whereas the lower layer with high resistivity is inferred as granite. The interface between middle and lower layer is recognized as the potential zone for occurrence of uranium deposits. According to the corresponding relation of the resistivity and magnetic anomaly with uranium ore bodies, the tracing model of faults and interfaces between the different rocks, and the forecasting model of advantageous area for uranium deposits have been established. In terms of the forecasting model, some significant sections for uranium deposits were delineated in the west of the Xiangshan volcanic basin. As a result, some achievements on uranium prospecting have been acquired. High grade economic uranium ore bodies have been found in several boreholes, which are located in the forecasted zones. (author)

  20. Structural and electrical characterizations of BiFeO{sub 3} capacitors deposited by sol–gel dip coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Cetinkaya, Ali Osman, E-mail: cetinkayaaliosman@gmail.com [Physics Department, Abant Izzet Baysal University, 14280 Bolu (Turkey); Center for Nuclear Radiation Detector Research and Applications, 14280 Bolu (Turkey); Kaya, Senol; Aktag, Aliekber [Physics Department, Abant Izzet Baysal University, 14280 Bolu (Turkey); Center for Nuclear Radiation Detector Research and Applications, 14280 Bolu (Turkey); Budak, Erhan [Chemistry Department, Abant Izzet Baysal University, 14280 Bolu (Turkey); Yilmaz, Ercan [Physics Department, Abant Izzet Baysal University, 14280 Bolu (Turkey); Center for Nuclear Radiation Detector Research and Applications, 14280 Bolu (Turkey)

    2015-09-01

    Bismuth ferrite (BiFeO{sub 3}) thin films were deposited by sol–gel dip coating (SGDC) technique on Si-P(100) and glass substrates to investigate the structural and electrical characteristics. The aluminum (Al) metal contacts were formed on the samples deposited on the Si-P(100) to fabricate metal-oxide-semiconductor (MOS) capacitors. The fabricated MOS structures were characterized electrically by capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. The structural characterizations were performed by X-ray diffraction technique and scanning electron microscopy. The compositions of the films were investigated by energy-dispersive X-ray spectroscopy. The results exhibit that pure rhombohedral perovskite phase films were fabricated without any elemental contamination. Average grain sizes of the BiFeO{sub 3} deposited on silicon and glass wafers were found to be about 34,50 and 30,00 nm, respectively. In addition, while the thin films deposited on glass substrate exhibit porous surface, those deposited on Si-P(100) wafers exhibit dense microstructure with a homogenous surface. Moreover, the C–V and G/ω–V characteristics are sensitive to applied voltage frequency due to frequency dependent charges (N{sub ss}) and series resistance (R{sub s}). The peak values of R{sub s} have been decreased from 2,6 kΩ to 40 Ω, while N{sub ss} is varied from 6,57 × 10{sup 12} to 3,68 × 10{sup 12} eV{sup −1} cm{sup −2} with increasing in frequency. Consequently, pure phase polycrystalline BiFeO{sub 3} thin films were fabricated successfully by SGDC technique and BiFeO{sub 3} dielectric layer exhibits stable insulation characteristics. - Highlights: • Bismuth ferrite thin films were deposited onto silicon and glass substrates by sol–gel. • Structural and electrical properties of fabricated films have been investigated. • Pure rhombohedral perovskite phase films without any contamination were deposited. • Series resistance and interface

  1. Optoelectronic properties of cadmium sulfide thin films deposited by thermal evaporation technique

    International Nuclear Information System (INIS)

    Ali, N.; Iqbal, M.A.; Hussain, S.T.; Waris, M.; Munair, S.A.

    2011-01-01

    The substrate temperature in depositions of thin films plays a vital role in the characteristics of deposited films. We studied few characteristics of cadmium sulphide thin film deposited at different temperature (150 deg. C- 300 deg. C) on corning 7059 glass substrate. We measured transmittance, absorbance, band gap and reflectance via UV spectroscopy. It was found that the transmittance for 300 nm to 1100 nm was greater than 80%. The resistivity and mobility was calculated by Vander Pauw method which were 10-80 cm and 2-60 cm/sup 2/V/sup -1/S/sup -1/ respectively. The thermoelectric properties of the film were measured by hot and cold probe method which shows the N-type nature of the film. (author)

  2. Synthesis of dense nano cobalt-hydroxyapatite by modified electroless deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mohd Zaheruddin, K., E-mail: zaheruddin@unimap.edu.my; Rahmat, A., E-mail: azmirahmat@unimap.edu.my; Shamsul, J. B., E-mail: sbaharin@unimap.edu.my; Mohd Nazree, B. D., E-mail: nazree@unimap.edu.my; Aimi Noorliyana, H., E-mail: aimiliyana@unimap.edu.my [School of Materials Engineering, Universiti Malaysia Perlis, Kompleks Pusat Pengajian Jejawi Universiti Malaysia Perlis, Taman Muhibbah, Jejawi 02600 Arau Perlis (Malaysia)

    2016-07-19

    Cobalt-hydroxyapatite (Co-HA) composites was successfully prepared by simple electroless deposition process of Co on the surface of hydroxyapatite (HA) particles. Co deposition was carried out in an alkaline bath with sodium hypophosphite as a reducing agent. The electroless process was carried out without sensitization and activation steps. The deposition of Co onto HA was characterized by scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). The Co-HA composite powder was compacted and sintered at 1250°C. The Co particles were homogeneously dispersed in the HA matrix after sintering and the mechanical properties of composites was enhanced to 100 % with 3 % wt Co and gradually decreased at higher Co content.

  3. Electrochemical performances of proton-conducting SOFC with La-Sr-Fe-O cathode fabricated by electrophoretic deposition techniques

    International Nuclear Information System (INIS)

    Asamoto, Makiko; Miyake, Shinji; Yonei, Yuka; Yamaura, Hiroyuki; Yahiro, Hidenori

    2009-01-01

    The electrochemical performances of Proton-conducting SOFC with La 0.7 Sr 0.3 FeO 3 (LSF) cathode fabricated by the electrophoretic deposition (EPD) technique were investigated. The EPD technique provided the uniform layer of LSF cathode with constant thickness and can easily control the thickness by changing an applied voltage. The power density of the SOFC cell was dependent on the thickness of LSF cathode. The activation energy was measured to elucidate the rate-determining step for LSF cathode reaction. (author)

  4. Characterization of nanostructured photosensitive cadmium sulphide thin films grown by SILAR deposition technique

    International Nuclear Information System (INIS)

    Ubale, A.U.; Bargal, A.N.

    2010-01-01

    This paper reports the preparation of photosensitive nanostructured CdS thin films by successive ionic layer adsorption and reaction (SILAR) method at room temperature. To obtain good quality CdS thin films, preparative conditions such as concentration of cationic and anionic precursors, adsorption and rinsing time durations etc. are optimized. The structural, optical and electrical characterizations of the as-deposited and annealed CdS thin films were carried out using X-ray diffraction, scanning electron microscopy, optical absorption and electrical resistivity methods. The photoconductivity studies showed that the annealed films are more than that photosensitive. The TEP measurement shows that deposited films are of n-type. (author)

  5. TPR system: a powerful technique to monitor carbon nanotube formation during chemical vapour deposition

    International Nuclear Information System (INIS)

    Tristao, Juliana Cristina; Moura, Flavia Cristina Camilo; Lago, Rochel Montero; Sapag, Karim

    2010-01-01

    In this work, a TPR (Temperature Programmed Reduction) system is used as a powerful tool to monitor carbon nanotubes production during CVD (Chemical Vapour Deposition), The experiments were carried out using catalyst precursors based on Fe-Mo supported on Al 2 O 3 and methane as carbon source. As methane reacts on the Fe metal surface, carbon is deposited and H2 is produced. TPR is very sensitive to the presence of H2 and affords information on the temperature where catalyst is active to form different forms of carbon, the reaction kinetics, the catalyst deactivation and carbon yields. (author)

  6. MOCVD with gas phase composition control for the growth of high quality YBa2Cu3O7-x thin films for microwave applications

    International Nuclear Information System (INIS)

    Musolf, J.

    1997-01-01

    The MOCVD growth technique has demonstrated YBa 2 Cu 3 O 7-x thin films with adequate transport properties (T c >90 K, J c > x 10 6 A cm -2 , R s p /C v ) and the species concentrations. After determining the correlation between gas phase and solid phase composition this technique enables the reproducible growth of YBa 2 Cu 3 O 7-x thin films by MOCVD with composition very close to 123. Further refinement of growth temperature, total pressure, oxygen partial pressure and total flow rates has produced films with excellent properties. Smooth surface morphology with a low density of outgrowths ( 4 cm -2 ), narrow XRD rocking curve peaks FWHM c =92 K), low surface resistance (device R s <350 μΩ at 77 K, 10 GHz) have been demonstrated using this growth concept. Special focus was placed on optimization of the performance of a microwave test device which serves as a process control monitor of the suitability of these films for passive microwave applications. (orig.)

  7. Functional Micrococcus lysodeikticus layers deposited by laser technique for the optical sensing of lysozyme.

    Science.gov (United States)

    Dinca, Valentina; Zaharie-Butucel, Diana; Stanica, Luciana; Brajnicov, Simona; Marascu, Valentina; Bonciu, Anca; Cristocea, Andra; Gaman, Laura; Gheorghiu, Mihaela; Astilean, Simion; Vasilescu, Alina

    2018-02-01

    Whole cell optical biosensors, made by immobilizing whole algal, bacterial or mammalian cells on various supports have found applications in several fields, from ecology and ecotoxicity testing to biopharmaceutical production or medical diagnostics. We hereby report the deposition of functional bacterial layers of Micrococcus lysodeikticus (ML) via Matrix-Assisted Pulsed Laser Evaporation (MAPLE) on poly(diallyldimethylamonium) (PDDA)-coated-glass slides and their application as an optical biosensor for the detection of lysozyme in serum. Lysozyme is an enzyme upregulated in inflammatory diseases and ML is an enzymatic substrate for this enzyme. The MAPLE-deposited bacterial interfaces were characterised by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Fourier-Transformed Infrared Spectroscopy (FTIR), Raman and optical microscopy and were compared with control interfaces deposited via layer-by-layer on the same substrate. After MAPLE deposition and coating with graphene oxide (GO), ML-modified interfaces retained their functionality and sensitivity to lysozyme's lytic action. The optical biosensor detected lysozyme in undiluted serum in the clinically relevant range up to 10μgmL -1 , in a fast and simple manner. Copyright © 2017 Elsevier B.V. All rights reserved.

  8. Fabrication and characterization of In2S3 thin films deposited by thermal evaporation technique

    International Nuclear Information System (INIS)

    Timoumi, A.; Bouzouita, H.; Kanzari, M.; Rezig, B.

    2005-01-01

    Indium sulphide, In 2 S 3 , thin films present an alternative to conventional CdS films as buffer layer for CIS-based thin film solar cells. The objective is to eliminate toxic cadmium for environmental reasons. Indium sulphide is synthesized and deposited by single source vacuum thermal evaporation method on glass substrates. The films are analyzed by X-ray diffraction (XRD) and spectrophotometric measurements. They have a good crystallinity, homogeneity and adhesion. The X-ray diffraction analysis confirmed the initial amorphous nature of the deposited InS film and phase transition into crystalline In 2 S 3 formed upon annealing at free air for 250 deg. C substrate temperature for 2 h. The optical constants of the deposited films were obtained from the analysis of the experimental recorded transmission and reflectance spectral data over the wavelength range of 300-1800 nm. We note that the films annealed at 250 deg. C for 2 h show a good homogeneity with 80% transmission. An analysis of the optical absorption data of the deposited films revealed an optical direct band gap energy in the range of 2.0-2.2 eV

  9. Fabrication of Antireflection Nanodiamond Particle Film by the Spin Coating Deposition Technique

    Directory of Open Access Journals (Sweden)

    Chii-Ruey Lin

    2014-01-01

    Full Text Available Diamond-based antireflective (AR coatings were fabricated using a spin coating of diamond suspension at room temperature as nucleation enhancement procedure and microwave plasma enhanced chemical vapour deposition. Various working pressures were used to investigate their effect on the optical characterization of the as-deposited diamond films. Scanning electron microscopy (SEM and atomic forced microscopy (AFM were employed to analyze the surface properties of the diamond films. Raman spectra and transmission electron microscopy (TEM also were used for analysis of the microstructure of the films. The results showed that working pressure had a significant effect on thickness, surface roughness, and wettability of the as-deposited diamond films. Deposited under 35 Torr or working pressure, the film possessed a low surface roughness of 13.8 nm and fine diamond grain sizes of 35 nm. Reflectance measurements of the films also were carried out using UV-Vis spectrometer and revealed a low reflectance value of the diamond films. The achievement demonstrated feasibility of the proposed spin-coating procedure for large scale production and thus opens up a prospect application of diamond film as an AR coating in industrial optoelectronic device.

  10. Diamond-coated three-dimensional GaN micromembranes: effect of nucleation and deposition techniques

    Czech Academy of Sciences Publication Activity Database

    Ižák, Tibor; Vanko, G.; Babchenko, Oleg; Potocký, Štěpán; Marton, M.; Vojs, M.; Choleva, P.; Kromka, Alexander

    2015-01-01

    Roč. 252, č. 11 (2015), s. 2585-2590 ISSN 0370-1972 R&D Projects: GA ČR(CZ) GP14-16549P Institutional support: RVO:68378271 Keywords : diamond film * GaN micromembranes * microwave chemical vapour deposition * polymer-based nucleation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.522, year: 2015

  11. A comparative study of two advanced spraying techniques for the deposition of biologically active enzyme coatings onto bone-substituting implants

    International Nuclear Information System (INIS)

    Jonge, Lise T. de; Ju, J.; Leeuwenburgh, S.C.G.; Yamagata, Y.; Higuchi, T.; Wolke, J.G.C.; Inoue, K.; Jansen, J.A.

    2010-01-01

    Surface modification of implant materials with biomolecule coatings is of high importance to improve implant fixation in bone tissue. In the current study, we present two techniques for the deposition of biologically active enzyme coatings onto implant materials. The well-established thin film ElectroSpray Deposition (ESD) technique was compared with the SAW-ED technique that combines high-frequency Surface Acoustic Wave atomization with Electrostatic Deposition. By immobilizing the enzyme alkaline phosphatase (ALP) onto implant surfaces, the influence of both SAW-ED and ESD deposition parameters on ALP deposition efficiency and ALP biological activity was investigated. ALP coatings with preserved enzyme activity were deposited by means of both the SAW-ED and ESD technique. The advantages of SAW-ED over ESD include the possibility to spray highly conductive protein solutions, and the 60-times faster deposition rate. Furthermore, significantly higher deposition efficiencies were observed for the SAW-ED technique compared to ESD. Generally, it was shown that protein inactivation is highly dependent on both droplet dehydration and the applied electrical field strength. The current study shows that SAW-ED is a versatile and flexible technique for the fabrication of functionally active biomolecule coatings.

  12. Characterization of hydroxyapatite coating by pulse laser deposition technique on stainless steel 316 L by varying laser energy

    International Nuclear Information System (INIS)

    Khandelwal, Himanshu; Singh, Gurbhinder; Agrawal, Khelendra; Prakash, Satya; Agarwal, R.D.

    2013-01-01

    Highlights: ► Hydroxyapatite coating was successfully deposited on stainless steel substrate by pulse laser deposition at different energy levels (i.e. 300 mJ and 500 mJ, respectively). ► Variation in laser energy affects the surface characteristic of hydroxyapatite coating (particle size, surface roughness, uniformity, Ca/P ratio). ► Laser energy between 300 mJ and 500 mJ is the optimal choice for obtaining ideal Ca/P ratio. - Abstract: Hydroxyapatite is an attractive biomaterial mainly used in bone and tooth implants because it closely resembles human tooth and bone mineral and has proven to be biologically compatible with these tissues. In spite of this advantage of hydroxyapatite it has also certain limitation like inferior mechanical properties which do not make it suitable for long term load bearing applications; hence a lot of research is going on in the development of hydroxyapatite coating over various metallic implants. These metallic implants have good biocompatibility and mechanical properties. The aim of the present work is to deposit hydroxyapatite coating over stainless steel grade 316 L by pulse laser deposition technique by varying laser energy. To know the effect of this variation, the coatings were than characterized in detail by X-ray diffraction, finite emission-scanning electron microscope, atomic force microscope and energy dispersive X-ray spectroscopy.

  13. Higher lung deposition with Respimat® Soft Mist™ Inhaler than HFA-MDI in COPD patients with poor technique

    Directory of Open Access Journals (Sweden)

    Peter Brand

    2008-08-01

    Full Text Available Peter Brand1, Bettina Hederer2, George Austen3, Helen Dewberry3, Thomas Meyer41RWTH, Aachen, Germany; 2Boehringer Ingelheim, Ingelheim, Germany; 3Boehringer Ingelheim, Bracknell, UK; 4Inamed Research, Gauting, GermanyAbstract: Aerosols delivered by Respimat® Soft Mist™ Inhaler (SMI are slower-moving and longer-lasting than those from pressurized metered-dose inhalers (pMDIs, improving the efficiency of pulmonary drug delivery to patients. In this four-way cross-over study, adults with chronic obstructive pulmonary disease (COPD and with poor pMDI technique received radiolabelled Berodual® (fenoterol hydrobromide 50 µg/ipratropium bromide 20 µg via Respimat® SMI or hydrofluoroalkane (HFA-MDI (randomized order on test days 1 and 2, with no inhaler technique training. The procedure was repeated on test days 3 and 4 after training. Deposition was measured by gamma scintigraphy. All 13 patients entered (9 males, mean age 62 years; FEV1 46% of predicted inhaled too fast at screening (peak inspiratory flow rate [IF]: 69–161 L/min. Whole lung deposition was higher with Respimat® SMI than with pMDI for untrained (37% of delivered dose vs 21% of metered dose and trained patients (53% of delivered vs 21% of metered dose (pSign-Test = 0.15; pANOVA< 0.05. Training also improved inhalation profiles (slower average and peak IF as well as longer breath-hold time. Drug delivery to the lungs with Respimat® SMI is more efficient than with pMDI, even with poor inhaler technique. Teaching patients to hold their breath as well as to inhale slowly and deeply increased further lung deposition using Respimat® SMI.Keywords: chronic obstructive pulmonary disease, drug delivery, inhalation, metered-dose inhaler, poor inhalation technique, training

  14. Identification of sources of tar balls deposited along the Goa coast, India, using fingerprinting techniques

    Digital Repository Service at National Institute of Oceanography (India)

    Suneel, V.; Vethamony, P.; Zakaria, M.P.; Naik, B.G.; Prasad, K.V.

    . Christensen et al (2007) reviewed the practical aspects of chemometrics for oil spill fingerprinting and provided a basis for the use of chemometric 3    methods in tiered oil spill fingerprinting. Biomarker compounds such as isoprenoid alkanes, hopanes... deposited along the Malaysian beaches. Low molecular weight/high molecular weight ratios (L/H) of both alkanes and PAHs together are useful in categorizing the weathering effects of tar balls (Chandru et al., 2008). However, in cases...

  15. HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Aji, A. S., E-mail: aji.ravazes70@gmail.com; Darma, Y., E-mail: aji.ravazes70@gmail.com [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

    2014-03-24

    Surface modifications of Si (111) substrate by HF solution for thin film carbon deposition have been systematically studied. Thin film carbon on Si (111) has been deposited using DC Unbalanced Magnetron Sputtering with carbon pellet doped by 5% Fe as the target. EDAX characterization confirmed that the carbon fraction on Si substrate much higher by dipping a clean Si substrate by HF solution before sputtering process in comparison with carbon fraction on Si substrate just after conventional RCA. Moreover, SEM and AFM images show the uniform thin film carbon on Si with HF treatment, in contrast to the Si without HF solution treatment. These experimental results suggest that HF treatment of Si surface provide Si-H bonds on top Si surface that useful to enhance the carbon deposition during sputtering process. Furthermore, we investigate the thermal stability of thin film carbon on Si by thermal annealing process up to 900 °C. Atomic arrangements during annealing process were characterized by Raman spectroscopy. Raman spectra indicate that thin film carbon on Si is remaining unchanged until 600 °C and carbon atoms start to diffuse toward Si substrate after annealing at 900 °C.

  16. Thick CrN/NbN multilayer coating deposited by cathodic arc technique

    Energy Technology Data Exchange (ETDEWEB)

    Araujo, Juliano Avelar; Tschiptschin, Andre Paulo; Souza, Roberto Martins, E-mail: antschip@usp.br [Universidade de Sao Paulo (USP), SP (Brazil); Lima, Nelson Batista de [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2017-01-15

    The production of tribological nanoscale multilayer CrN/NbN coatings up to 6 μm thick by Sputtering/HIPIMS has been reported in literature. However, high demanding applications, such as internal combustion engine parts, need thicker coatings (>30 μm). The production of such parts by sputtering would be economically restrictive due to low deposition rates. In this work, nanoscale multilayer CrN/NbN coatings were produced in a high-deposition rate, industrial-size, Cathodic Arc Physical Vapor Deposition (ARC-PVD) chamber, containing three cathodes in alternate positions (Cr/ Nb/Cr). Four 30 μm thick NbN/CrN multilayer coatings with different periodicities (20, 10, 7.5 and 4 nm) were produced. The coatings were characterized by X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). The multilayer coating system was composed of alternate cubic rock salt CrN and NbN layers, coherently strained due to lattice mismatch. The film grew with columnar morphology through the entire stratified structure. The periodicities adopted were maintained throughout the entire coating. The 20 nm periodicity coating showed separate NbN and CrN peaks in the XRD patterns, while for the lower periodicity (≤10nm) coatings, just one intermediate lattice (d-spacing) was detected. An almost linear increase of hardness with decreasing bilayer period indicates that interfacial effects can dominate the hardening mechanisms. (author)

  17. Deposition of waste kaolin in aluminum alloy by electrolytic plasma technique

    International Nuclear Information System (INIS)

    Palinkas, Fabiola Bergamasco da Silva Marcondes; Antunes, Maria Lucia Pereira; Cruz, Nilson Cristino; Rangel, Elidiane Cipriano; Souza, Jose Antonio da Silva

    2016-01-01

    Full text: Kaolin is a widely explored mineral for various industrial purposes and its processing generates up to 90% of waste, corresponding to 500 thousand tons annually. The Deposition of Kaolin residue on aluminum alloys by electrolytic plasma has objective of a valorization of the residue. It was evaluated the mineralogical composition by X-ray diffraction (XRD), using PANalytical diffractometer X'Pert Pro. The scanning electron microscopy (SEM) and the spectrometry of dispersive of energy (EDS) evaluated the morphology and elementary chemical composition by microscope scanning electron JEOL JSM-6010LA. The Infrared Spectroscopy (FTIR) has used a Spectrometer the Perkin-Elmer 1760X FT-IR with spectral range 4000-400 cm -1 . XRD results indicate peaks of kaolinite as the main constituent. The morphology of the particles correspond to pseudo-hexagonal lamellar crystals characteristic of kaolinite, analysis by EDS allows to identify the composition of the particles as Al and Si. The samples were deposited at concentrations of 5, 10 and 15 mg of the residue and each concentration were considered deposition times of 5, 10 and 15 minutes. Tests evaluate the films as the wettability, chemical composition, morphology, mechanical strength and corrosion resistance. Results indicate the presence of kaolinite, alumina and mullite in the obtained coatings. (author)

  18. Preparation, characterization and optical properties of Gadolinium doped ceria thin films by pulsed laser deposition technique

    International Nuclear Information System (INIS)

    Nagaraju, P.; Vijaya Kumar, Y.; Vishnuvardhan Reddy, C.; Ramana Reddy, M.V.; Phase, D.M; Raghavendra Reddy, V.

    2013-01-01

    The growth of Gadolinium doped ceria thin films with controlled surface structure for device quality applications presents a significant problem for experimental investigation. In the present study gadolinium doped cerium oxide thin films were prepared by pulsed laser deposition (PLD) and were studied for their surface structure evaluation in relation to the optimized operating conditions during the stage of film preparation. The deposition was made with gadolinium concentration of 10 mole% to ceria pellets. The films were deposited on quartz substrate in the presence of oxygen partial pressure of 1.5 x 10 -3 torr using KrF Excimer laser with laser energy 220 mJ at a substrate temperature 700℃. The effect of annealing temperature on 10 mole% GDC thin film was investigated. The film thickness was measured by using AMBIOS make XP-l stylus profiler. As prepared and annealed thin films were characterized for crystallinity, particle size and orientation by using G.I.XRD. The films were characterized using atomic force microscopy (AFM). The AFM results gave a consistent picture of the evolution of GDC film surface morphologies and microstructures in terms of surface roughness, grain distribution and mean grain size. The optical transmittance spectra was used to determine the optical constants such as optical band gap, refractive index, extinction coefficient of as prepared and annealed thin films. (author)

  19. Real-time kinetic modeling of YSZ thin film roughness deposited by e-beam evaporation technique

    International Nuclear Information System (INIS)

    Galdikas, A.; Cerapaite-Trusinskiene, R.; Laukaitis, G.; Dudonis, J.

    2008-01-01

    In the present study, the process of yttrium-stabilized zirconia (YSZ) thin films deposition on optical quartz (SiO 2 ) substrates using e-beam deposition technique controlling electron gun power is analyzed. It was found that electron gun power influences the non-monotonous kinetics of YSZ film surface roughness. The evolution of YSZ thin film surface roughness was analyzed by a kinetic model. The model is based on the rate equations and includes processes of surface diffusion of the adatoms and the clusters, nucleation, growth and coalescence of islands in the case of thin film growth in Volmer-Weber mode. The analysis of the experimental results done by modeling explains non-monotonous kinetics and dependence of the surface roughness on the electron gun power. A good quantitative agreement with experimental results is obtained taking into account the initial roughness of the substrate surface and the amount of the clusters in the flux of evaporated material.

  20. Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

    Directory of Open Access Journals (Sweden)

    Domenico Melisi

    2014-11-01

    Full Text Available In this paper, a spray technique is used to perform low temperature deposition of multi-wall carbon nanotubes on semi-insulating gallium arsenide in order to obtain photodectors. A dispersion of nanotube powder in non-polar 1,2-dichloroethane is used as starting material. The morphological properties of the deposited films has been analysed by means of electron microscopy, in scanning and transmission mode. Detectors with different layouts have been prepared and current–voltage characteristics have been recorded in the dark and under irradiation with light in the range from ultraviolet to near infrared. The device spectral efficiency obtained from the electrical characterization is finally reported and an improvement of the photodetector behavior due to the nanotubes is presented and discussed.

  1. Layer-by-layer deposition of superconducting Sr-Ca-Cu-O films by the spray pyrolysis technique

    International Nuclear Information System (INIS)

    Pawar, S.H.; Pawaskar, P.N.; Ubale, M.J.; Kulkarni, S.B.

    1995-01-01

    Layer-by-layer deposition of Sr-Ca-Cu-O films has been carried out using the spray pyrolysis technique. Reagent-grade nitrates of strontium, calcium and copper were used to prepare starting solutions for spray pyrolysis. A two-step procedure was used for every layer of the constituents in the sequence Sr-Cu-Ca-Cu-Sr: first, deposition onto silver substrate at 350 C, then firing at T≥450 C, both at atmospheric pressure. The films were 2-3 μm thick and showed adequate adhesion to the substrate. The films were then characterised by studying their electron micrographs, X-ray diffraction patterns and electrical resistivity. The films showed superconductivity below 104 K. ((orig.))

  2. Characterization of photoluminescent europium doped yttrium oxide thin-films prepared by metallorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    McKittrick, J.; Bacalski, C.F.; Hirata, G.A.; Hubbard, K.M.; Pattillo, S.G.; Salazar, K.V.; Trkula, M.

    1998-01-01

    Europium doped yttrium oxide, (Y 1-x Eu x ) 2 O 3 , thin-films were deposited on silicon and sapphire substrates by metallorganic chemical vapor deposition (MOCVD). The films were grown in a MOCVD chamber reacting yttrium and europium tris(2,2,6,6-tetramethyl-3,5,-heptanedionates) precursors in an oxygen atmosphere at low pressures (5 Torr) and low substrate temperatures (500--700 C). The films deposited at 500 C were flat and composed of nanocrystalline regions of cubic Y 2 O 3 , grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600 C developed from the flat, nanocrystalline morphology into a plate-like growth morphology oriented in the [111] with increasing deposition time. Monoclinic Y 2 O 3 :Eu 3+ was observed in x-ray diffraction for deposition temperatures ≥600 C on both (111) Si and (001) sapphire substrates. This was also confirmed by the photoluminescent emission spectra

  3. Noninvasive radioisotopic technique for detection of platelet deposition in mitral valve prostheses and quantitation of visceral microembolism in dogs

    International Nuclear Information System (INIS)

    Dewanjee, M.K.; Fuster, V.; Rao, S.A.; Forshaw, P.L.; Kaye, M.P.

    1983-01-01

    A noninvasive technique has been developed in the dog model for imaging, with a gamma camera, the platelet deposition on Bjoerk-Shiley mitral valve prostheses early postoperatively. At 25 hours after implantation of the prosthesis and 24 hours after intravenous administration of 400 to 500 microCi of platelets labeled with indium-111, the platelet deposition in the sewing ring and perivalvular cardiac tissue can be clearly delineated in a scintiphotograph. An in vitro technique was also developed for quantitation of visceral microemboli in brain, lungs, kidneys, and other tissues. Biodistribution of the labeled platelets was quantitated, and the tissue/blood radioactivity ratio was determined in 22 dogs in four groups: unoperated normal dogs, sham-operated dogs, prosthesis-implanted dogs, and prosthesis-implanted dogs treated with dipyridamole before and aspirin and dipyridamole immediately after operation. Fifteen to 20% of total platelets were consumed as a consequence of the surgical procedure. On quantitation, we found that platelet deposition on the components of the prostheses was significantly reduced in prosthesis-implanted animals treated with dipyridamole and aspirin when compared with prosthesis-implanted, untreated dogs. All prosthesis-implanted animals considered together had a twofold to fourfold increase in tissue/blood radioactivity ratio in comparison with unoperated and sham-operated animals, an indication that the viscera work as filters and trap platelet microemboli that are presumably produced in the region of the mitral valve prostheses. In the dog model, indium-111-labeled platelets thus provide a sensitive marker for noninvasive imaging of platelet deposition on mechanical mitral valve prostheses, in vitro evaluation of platelet microembolism in viscera, in vitro quantitation of surgical consumption of platelets, and evaluation of platelet-inhibitor drugs

  4. Modification of the morphology and optical properties of SnS films using glancing angle deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Sazideh, M.R., E-mail: Mohammadrezasazideh@gmail.com [Thin Film Lab., Faculty of Physics, Semnan University, Semnan, Islamic Republic of Iran (Iran, Islamic Republic of); Dizaji, H. Rezagholipour, E-mail: hrgholipour@semnan.ac.ir [Faculty of Physics, Semnan University, P.O. Box: 35195-363, Semnan, Islamic Republic of Iran (Iran, Islamic Republic of); Ehsani, M.H., E-mail: mhe_ehsani@yahoo.com [Faculty of Physics, Semnan University, P.O. Box: 35195-363, Semnan, Islamic Republic of Iran (Iran, Islamic Republic of); Moghadam, R. Zarei, E-mail: r.zarei1991@gmail.com [Thin Film Lab., Faculty of Physics, Semnan University, Semnan, Islamic Republic of Iran (Iran, Islamic Republic of)

    2017-05-31

    Highlights: • SnS thin films produced by thermal evaporation method using glancing angle deposition technique. • At α = 85° the layers show a considerable change in effective refractive index (Δn = 1.7) at near-IR spectral range. • FESEM images showed drastic changes in the structure and morphology of individual nano-plates as a function of incident angle deposition. - Abstract: Tin sulfide (SnS) films were prepared by thermal evaporation method using Glancing Angle Deposition (GLAD) technique at zero and different oblique incident flux angles (α = 45°, 55°, 65°, 75° and 85°). The physical properties of prepared films were systematically investigated. The X-ray diffraction analysis indicated that the film deposited at α = 0° formed as single phase with an orthorhombic structure. However, the layers became amorphous at α = 45°, 55°, 65°, 75° and 85°. Beside the appearance of amorphous feature in the film prepared at α higher than zero, Sn{sub 2}S{sub 3} phase was also observed. The top and cross-sectional field emission scanning electron microscope (FESEM) images of the samples showed noticeable changes in the structure and morphology of individual nano-plates as a function of incident angle. The band gap and refractive index values of the films were calculated by optical transmission measurements. The optical band-gap values were observed to increase with increasing the incident flux angle. This can be due to presence of Sn{sub 2}S{sub 3} phase observed in the samples produced at α values other than zero. The effective refractive index and porosity exhibit an opposite evolution as the incident angle α rises. At α = 85° the layers show a considerable change in effective refractive index (Δn = 1.7) at near-IR spectral range.

  5. Effects of Mg pre-flow, memory, and diffusion on the growth of p-GaN with MOCVD (Conference Presentation)

    Science.gov (United States)

    Tu, Charng-Gan; Chen, Hao-Tsung; Chen, Sheng-Hung; Chao, Chen-Yao; Kiang, Yean-Woei; Yang, Chih-Chung

    2017-02-01

    In MOCVD growth, two key factors for growing a p-type structure, when the modulation growth or delta-doping technique is used, include Mg memory and diffusion. With high-temperature growth (>900 degree C), doped Mg can diffuse into the under-layer. Also, due to the high-pressure growth and growth chamber coating in MOCVD, plenty Mg atoms exist in the growth chamber for a duration after Mg supply is ended. In this situation, Mg doping continues in the following designated un-doped layers. In this paper, we demonstrate the study results of Mg preflow, memory, and diffusion. The results show that pre-flow of Mg into the growth chamber can lead to a significantly higher Mg doping concentration in growing a p-GaN layer. In other words, a duration for Mg buildup is required for high Mg incorporation. Based on SIMS study, we find that with the pre-flow growth, a high- and a low-doping p-GaN layer are formed. The doping concentration difference between the two layers is about 10 times. The thickness of the high- (low-) doping layer is about 40 (65) nm. The growth of the high-doping layer starts 10-15 min after Mg supply starts (Mg buildup time). The diffusion length of Mg into the AlGaN layer beneath (Mg content reduced to doping concentration is reduced to <1%.

  6. Growth of a New Ternary BON Crystal on Si(100) by Plasma-Assisted MOCVD and Study on the Effects of Fed Gas and Growth Temperature

    Science.gov (United States)

    Chen, G. C.; Lee, S.-B.; Boo, J.-H.

    A new ternary BOxNy crystal was grown on Si(100) substrate at 500°C by low-frequency (100 kHz) radio-frequency (rf) derived plasma-assisted MOCVD with an organoborate precursor. The as-grown deposits were characterized by SEM, TED, XPS, XRD, AFM and FT-IR. The experimental results showed that BOxNy crystal was apt to be formed at N-rich atmosphere and high temperature. The decrease of hydrogen flux in fed gases was of benefit to form BON crystal structure. The crystal structure of BOxNy was as similar to that of H3BO3 in this study.

  7. Two different mechanisms of fatigue damage due to cyclic stress loading at 77 K for MOCVD-YBCO-coated conductors

    International Nuclear Information System (INIS)

    Sugano, M; Yoshida, Y; Hojo, M; Shikimachi, K; Hirano, N; Nagaya, S

    2008-01-01

    Tensile fatigue tests were carried out at 77 K for YBCO-coated conductors fabricated by metal-organic chemical vapor deposition (MOCVD). The S-N relationship, variation of critical current (I c ) during cyclic loading and microscopic fatigue damage were investigated. Fatigue strength at 10 6 cycles was evaluated to be σ max = 1300 MPa and 890 MPa under the stress ratios of 0.5 and 0.1. Two different mechanisms of fatigue damage, depending on the number of stress cycles to failure, were observed. In one of the fracture mechanisms, fatigue behavior is characterized by overall fracture which occurs at 10 4 -10 5 cycles. For these specimens, I c after unloading does not degrade before overall fracture. Although only shallow slip bands were found at the Ag surface, fatigue cracks were found on the Hastelloy C-276 surface of the fractured specimen. These results suggest that overall fracture due to cyclic stress was caused by fatigue of the Hastelloy substrate. In the other fracture mechanism, even though overall fracture did not occur at 10 6 cycles, a slight decrease of I c was detected after 10 5 cycles. No fatigue crack was found on the Hastelloy surface, while deep slip bands corresponding to the initial stage of fatigue crack were observed on the Ag surface. From these results, we concluded that I c degradation at a high cycle number is attributed to the fatigue of the Ag stabilizing layer

  8. A high critical current density MOCVD coated conductor with strong vortex pinning centers suitable for very high field use

    International Nuclear Information System (INIS)

    Chen, Z; Kametani, F; Larbalestier, D C; Chen, Y; Xie, Y; Selvamanickam, V

    2009-01-01

    We have made extensive low temperature and high field evaluations of a recent 2.1 μm thick coated conductor (CC) grown by metal-organic chemical vapor deposition (MOCVD) with a view to its use for high field magnet applications, for which its very strong Hastelloy substrate makes it very suitable. This conductor contains dense three-dimensional (Y,Sm) 2 O 3 nanoprecipitates, which are self-aligned in planes tilted ∼7 deg. from the tape plane. Very strong vortex pinning is evidenced by high critical current density J c values of ∼3.1 MA cm -2 at 77 K and ∼43 MA cm -2 at 4.2 K, and by a strongly enhanced irreversibility field H irr , which reaches that of Nb 3 Sn (∼28 T at 1.5 K) at 60 K, even in the inferior direction of H parallel c axis. At 4.2 K, J c values are ∼15% of the depairing current density J d , much the highest of any superconductor suitable for magnet construction.

  9. A high critical current density MOCVD coated conductor with strong vortex pinning centers suitable for very high field use

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z; Kametani, F; Larbalestier, D C [National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310 (United States); Chen, Y; Xie, Y; Selvamanickam, V [SuperPower Incorporated, Schenectady, NY 12304 (United States)], E-mail: zhijun@asc.magnet.fsu.edu

    2009-05-15

    We have made extensive low temperature and high field evaluations of a recent 2.1 {mu}m thick coated conductor (CC) grown by metal-organic chemical vapor deposition (MOCVD) with a view to its use for high field magnet applications, for which its very strong Hastelloy substrate makes it very suitable. This conductor contains dense three-dimensional (Y,Sm){sub 2}O{sub 3} nanoprecipitates, which are self-aligned in planes tilted {approx}7 deg. from the tape plane. Very strong vortex pinning is evidenced by high critical current density J{sub c} values of {approx}3.1 MA cm{sup -2} at 77 K and {approx}43 MA cm{sup -2} at 4.2 K, and by a strongly enhanced irreversibility field H{sub irr}, which reaches that of Nb{sub 3}Sn ({approx}28 T at 1.5 K) at 60 K, even in the inferior direction of H parallel c axis. At 4.2 K, J{sub c} values are {approx}15% of the depairing current density J{sub d}, much the highest of any superconductor suitable for magnet construction.

  10. Broad Temperature Pinning Study of 15 mol.% Zr-Added (Gd, Y)-Ba-Cu-O MOCVD Coated Conductors

    Energy Technology Data Exchange (ETDEWEB)

    Xu, AX; Khatri, N; Liu, YH; Majkic, G; Galstyan, E; Selvamanickam, V; Chen, YM; Lei, CH; Abraimov, D; Hu, XB; Jaroszynski, J; Larbalestier, D

    2015-06-01

    BaZrO3 (BZO) nanocolumns have long been shown to be very effective for raising the pinning force F-p of REBa2Cu3Ox (REBCO, where RE = rare earth) films at high temperatures and recently at low temperatures too. We have successfully incorporated a high density of BZO nanorods into metal organic chemical vapor deposited (MOCVD) REBCO coated conductors via Zr addition. We found that, compared to the 7.5% Zr-added coated conductor, dense BZO nanorod arrays in the 15% Zr-added conductor are effective over the whole temperature range from 77 K down to 4.2 K. We attribute the substantially enhanced J(c) at 30 K to the weak uncorrelated pinning as well as the strong correlated pinning. Meanwhile, by tripling the REBCO layer thickness to similar to 2.8 mu m, the engineering critical current density J(e) at 30 K exceeds J(e) of optimized Nb-Ti wires at 4.2 K.

  11. MOCVD growth of GaN layer on InN interlayer and relaxation of residual strain

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Keon-Hun; Park, Sung Hyun; Kim, Jong Hack; Kim, Nam Hyuk; Kim, Min Hwa [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Na, Hyunseok [Department of Advanced Materials Science and Engineering, Daejin University, Pocheon, 487-711 (Korea, Republic of); Yoon, Euijoon, E-mail: eyoon@snu.ac.k [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 433-270 (Korea, Republic of)

    2010-09-01

    100 nm InN layer was grown on sapphire c-plane using a metal-organic chemical vapor deposition (MOCVD) system. Low temperature (LT) GaN layer was grown on InN layer to protect InN layer from direct exposure to hydrogen flow during high temperature (HT) GaN growth and/or abrupt decomposition. Subsequently, thick HT GaN layer (2.5 {mu}m thick) was grown at 1000 {sup o}C on LT GaN/InN/sapphire template. Microstructure of epilayer-substrate interface was investigated by transmission electron microscopy (TEM). From the high angle annular dark field TEM image, the growth of columnar structured LT GaN and HT GaN with good crystallinity was observed. Though thickness of InN interlayer is assumed to be about 100 nm based on growth rate, it was not clearly shown in TEM image due to the InN decomposition. The lattice parameters of GaN layers were measured by XRD measurement, which shows that InN interlayer reduces the compressive strain in GaN layer. The relaxation of compressive strain in GaN layer was also confirmed by photoluminescence (PL) measurement. As shown in the PL spectra, red shift of GaN band edge peak was observed, which indicates the reduction of compressive strain in GaN epilayer.

  12. Growth and characterization of yttrium iron garnet films on Si substrates by Chemical Solution Deposition (CSD) technique

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Xin; Chen, Ying; Wang, Genshui [Key Laboratory of Inorganic Function Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, University of Chinese Academy of Sciences, 1295 Dingxi Rd., Shanghai 200050 (China); Zhang, Yuanyuan [Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Rd., Shanghai 200241 (China); Ge, Jun [Key Laboratory of Inorganic Function Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, University of Chinese Academy of Sciences, 1295 Dingxi Rd., Shanghai 200050 (China); Tang, Xiaodong [Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Rd., Shanghai 200241 (China); Ponchel, Freddy; Rémiens, Denis [Institute of Electronics, Microelectronics and Nanotechnology (IEMN)–DOAE, UMR CNRS 8520, Université des Sciences et Technologies de Lille, 59652 Villeneuve d’Ascq Cedex (France); Dong, Xianlin, E-mail: xldong@mail.sic.ac.cn [Key Laboratory of Inorganic Function Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, University of Chinese Academy of Sciences, 1295 Dingxi Rd., Shanghai 200050 (China)

    2016-06-25

    Yttrium Iron Garnet (YIG) films were prepared on Si substrates by Chemical Solution Deposition (CSD) technique using acetic acid and deionized water as solvents. Well-crystallized and crack-free YIG films were obtained when annealed at 750 °C and 850 °C respectively, showing a low surface roughness of several nanometers. When annealed at 750 °C for 30 min, the saturated magnetization (Ms) and coercive field (Hc) of YIG films were 0.121 emu/mm{sup 3} (4πMs = 1.52 kGs) and 7 Oe respectively, which were similar to that prepared by PLD technique. The peak-to-peak linewidth of ferromagnetic resonance (FMR) was 220 Oe at 9.10 GHz. The results demonstrated that CSD was an excellent technique to prepare high quality yttrium iron garnet (YIG) films on silicon, which could provide a lower-cost way for large-scale production on Si-based integrated devices. - Highlights: • The preparation of YIG films by Chemical Solution Deposition are demonstrated. • Well-crystallized and crack-free YIG films can be obtained on Si substrate by CSD. • YIG films can be crystallized in 750 °C with good magnetic performances. • It's beneficial to large-scale production of YIG films on Si integrated devices.

  13. Investigation of Non-Vacuum Deposition Techniques in Fabrication of Chalcogenide-Based Solar Cell Absorbers

    KAUST Repository

    Alsaggaf, Ahmed

    2015-07-01

    The environmental challenges are increasing, and so is the need for renewable energy. For photovoltaic applications, thin film Cu(In,Ga)(S,Se)2 (CIGS) and CuIn(S,Se)2 (CIS) solar cells are attractive with conversion efficiencies of more than 20%. However, the high-efficiency cells are fabricated using vacuum technologies such as sputtering or thermal co-evaporation, which are very costly and unfeasible at industrial level. The fabrication involves the uses of highly toxic gases such as H2Se, adding complexity to the fabrication process. The work described here focused on non-vacuum deposition methods such as printing. Special attention has been given to printing designed in a moving Roll-to-Roll (R2R) fashion. The results show potential of such technology to replace the vacuum processes. Conversion efficiencies for such non-vacuum deposition of Cu(In,Ga)(S,Se)2 solar cells have exceeded 15% using hazardous chemicals such as hydrazine, which is unsuitable for industrial scale up. In an effort to simplify the process, non-toxic suspensions of Cu(In,Ga)S2 molecular-based precursors achieved efficiencies of ~7-15%. Attempts to further simplify the selenization step, deposition of CuIn(S,Se)2 particulate solutions without the Ga doping and non-toxic suspensions of Cu(In,Ga)Se2 quaternary precursors achieved efficiencies (~1-8%). The contribution of this research was to provide a new method to monitor printed structures through spectral-domain optical coherence tomography SD-OCT in a moving fashion simulating R2R process design at speeds up to 1.05 m/min. The research clarified morphological and compositional impacts of Nd:YAG laser heat-treatment on Cu(In,Ga)Se2 absorber layer to simplify the annealing step in non-vacuum environment compatible to R2R. Finally, the research further simplified development methods for CIGS solar cells based on suspensions of quaternary Cu(In,Ga)Se2 precursors and ternary CuInS2 precursors. The methods consisted of post deposition reactive

  14. Technique for large-scale structural mapping at uranium deposits i in non-metamorphosed sedimentary cover rocks

    International Nuclear Information System (INIS)

    Kochkin, B.T.

    1985-01-01

    The technique for large-scale construction (1:1000 - 1:10000), reflecting small amplitude fracture plicate structures, is given for uranium deposits in non-metamorphozed sedimentary cover rocks. Structure drill log sections, as well as a set of maps with the results of area analysis of hidden disturbances, structural analysis of iso-pachous lines and facies of platform mantle horizons serve as sour ce materials for structural mapplotting. The steps of structural map construction are considered: 1) structural carcass construction; 2) reconstruction of structure contour; 3) time determination of structure initiation; 4) plotting of an additional geologic load

  15. Characterization of ZnO:SnO{sub 2} (50:50) thin film deposited by RF magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Cynthia, S. R.; Sanjeeviraja, C.; Ponmudi, S. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi-630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi-630004 (India)

    2016-05-06

    Zinc oxide (ZnO) and tin oxide (SnO{sub 2}) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO{sub 2} (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

  16. In Situ Synthesis and Characterization of Fe-Based Metallic Glass Coatings by Electrospark Deposition Technique

    Science.gov (United States)

    Burkov, Alexander A.; Pyachin, S. A.; Ermakov, M. A.; Syuy, A. V.

    2017-02-01

    Crystalline FeWMoCrBC electrode materials were prepared by conventional powder metallurgy. Metallic glass (MG) coatings were produced by electrospark deposition onto AISI 1035 steel in argon atmosphere. X-ray diffraction and scanning electron microscopy verified the amorphous structure of the as-deposited coatings. The coatings have a thickness of about 40 microns and a uniform structure. The results of dry sliding wear tests against high-speed steel demonstrated that Fe-based MG coatings had a lower friction coefficient and more than twice the wear resistance for 20 km sliding distance with respect to AISI 1035 steel. High-temperature oxidation treatment of the metal glass coatings at 1073 K in air for 12 h revealed that the oxidation resistance of the best coating was 36 times higher than that for bare AISI 1035 steel. These findings are expected to broaden the applications of electrospark Fe-based MG as highly protective and anticorrosive coatings for mild steel.

  17. A comparison of nodular defect seed geometeries from different deposition techniques

    International Nuclear Information System (INIS)

    Stolz, C.J.; Tench, R.J.; Kozlowski, M.R.; Fornier, A.

    1995-01-01

    A focused ion-beam milling instrument commonly utilized in the semiconductor industry for failure analysis and IC repair, is capable of cross-sectioning nodular defects. Utilizing the instrument's scanning on beam, high-resolution imaging of the seeds that initiate nodular defect growth is possible. In an attempt to understand the origins of these seeds, HfO 2 /SiO 2 and Ta 2 O 5 /SiO 2 coatings were prepared by a variety of coating vendors and different deposition processes including e-beam, magnetron sputtering, and ion beam sputtering. By studying the shape, depth, and composition of the seed, inferences of its origin can be drawn. The boundaries between the nodule and thin film provide insight into the mechanical stability of the nodule. Significant differences in the seed composition, geometry of nodular growth and mechanical stability of the defects for sputtered versus e-beam coatings are reported. Differences in seed shape were also observed from different coating vendors using e-beam deposition of HfO 2 /SiO 2 coatings

  18. Measurement of LHCD edge power deposition through modulation techniques on Alcator C-Mod

    Energy Technology Data Exchange (ETDEWEB)

    Faust, I. C.; Brunner, D.; LaBombard, B.; Parker, R. R.; Baek, S. G.; Chilenksi, M. A.; Hubbard, A.; Hughes, J. W.; Terry, J. L.; Shiraiwa, S.; Walk, J. R.; Wallace, G. M.; Whyte, D. G. [MIT Plasma Science and Fusion Center, Cambridge, MA USA (United States); Edlund, E. [Princeton Plasma Physics Laboratory, Princeton, NJ USA (United States)

    2015-12-10

    The efficiency of LHCD on Alcator C-Mod drops exponentially with line average density. At reactor relevant densities (> 1 · 1020 [m{sup −3}]) no measurable current is driven. While a number of causes have been suggested, no specific mechanism has been shown to be responsible for the loss of current drive at high density. Fast modulation of the LH power was used to isolate and quantify the LHCD deposition within the plasma. Measurements from these plasmas provide unique evidence for determining a root cause. Modulation of LH power in steady plasmas exhibited no correlated change in the core temperature. A correlated, prompt response in the edge suggests that the loss in efficiency is related to a edge absorption mechanism. This follows previous results which found the generation of n{sub ||}-independent SOL currents. Multiple Langmuir probe array measurements of the conducted heat conclude that the lost power is deposited near the last closed flux surface. The heat flux induced by LH waves onto the outer divertor is calculated. Changes in the neutral pressure, ionization and hard X-ray emission at high density highlight the importance of the active divertor in the loss of efficiency. Results of this study implicate a mechanism which may occur over multiple passes, leading to power absorption near the LCFS.

  19. Effect of indium doping level on certain physical properties of CdS films deposited using an improved SILAR technique

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K., E-mail: kkr1365@yahoo.com [P.G. and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur-613 503, Tamil Nadu (India); Senthamilselvi, V. [P.G. and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur-613 503, Tamil Nadu (India); Department of Physics, Kunthavai Naachiyaar Government College for Women (Autonomous), Thanjavur-613 007, Tamil Nadu (India)

    2013-04-01

    The influence of indium (In) doping levels (0, 2, …, 8 at.%) on certain physical properties of cadmium sulphide (CdS) thin films deposited using an improved successive ionic layer adsorption and reaction (ISILAR) method has been studied. In this improved SILAR technique, a fresh anionic solution was introduced after a particular number of dipping cycles in order to achieve good stoichiometry. All the deposited films exhibited cubic phase with (1 1 1) plane as preferential orientation. The calculated crystallite size values are found to be decreased from 54.80 nm to 23.65 nm with the increase in In doping level. The optical study confirmed the good transparency (80%) of the film. A most compact and pinhole free smooth surface was observed for the CdS films with 8 at.% of In doping level. The perceived photoluminescence (PL) bands endorsed the lesser defect crystalline nature of the obtained CdS:In films. The chemical composition analysis (EDAX) showed the near stoichiometric nature of this ISILAR deposited CdS:In films.

  20. Effect of indium doping level on certain physical properties of CdS films deposited using an improved SILAR technique

    International Nuclear Information System (INIS)

    Ravichandran, K.; Senthamilselvi, V.

    2013-01-01

    The influence of indium (In) doping levels (0, 2, …, 8 at.%) on certain physical properties of cadmium sulphide (CdS) thin films deposited using an improved successive ionic layer adsorption and reaction (ISILAR) method has been studied. In this improved SILAR technique, a fresh anionic solution was introduced after a particular number of dipping cycles in order to achieve good stoichiometry. All the deposited films exhibited cubic phase with (1 1 1) plane as preferential orientation. The calculated crystallite size values are found to be decreased from 54.80 nm to 23.65 nm with the increase in In doping level. The optical study confirmed the good transparency (80%) of the film. A most compact and pinhole free smooth surface was observed for the CdS films with 8 at.% of In doping level. The perceived photoluminescence (PL) bands endorsed the lesser defect crystalline nature of the obtained CdS:In films. The chemical composition analysis (EDAX) showed the near stoichiometric nature of this ISILAR deposited CdS:In films.

  1. Fabrication and characterisation of ligand-functionalised ultrapure monodispersed metal nanoparticle nanoassemblies employing advanced gas deposition technique

    Science.gov (United States)

    Geremariam Welearegay, Tesfalem; Cindemir, Umut; Österlund, Lars; Ionescu, Radu

    2018-02-01

    Here, we report for the first time the fabrication of ligand-functionalised ultrapure monodispersed metal nanoparticles (Au, Cu, and Pt) from their pure metal precursors using the advanced gas deposition technique. The experimental conditions during nanoparticle formation were adjusted in order to obtain ultrafine isolated nanoparticles on different substrates. The morphology and surface analysis of the as-deposited metal nanoparticles were investigated using scanning electron microscopy, x-ray diffraction and Fourier transform infra-red spectroscopy, which demonstrated the formation of highly ordered pure crystalline nanoparticles with a relatively uniform size distribution of ∼10 nm (Au), ∼4 nm (Cu) and ∼3 nm (Pt), respectively. A broad range of organic ligands containing thiol or amine functional groups were attached to the nanoparticles to form continuous networks of nanoparticle-ligand nanoassemblies, which were characterised by scanning electron microscopy and x-ray photoelectron spectroscopy. The electrical resistance of the functional nanoassemblies deposited in the gap spacing of two microfabricated parallel Au electrodes patterned on silicon substrates ranged between tens of kΩ and tens of MΩ, which is suitable for use in many applications including (bio)chemical sensors, surface-enhanced Raman spectroscopy and molecular electronic rectifiers.

  2. Using wire shaping techniques and holographic optics to optimize deposition characteristics in wire-based laser cladding.

    Science.gov (United States)

    Goffin, N J; Higginson, R L; Tyrer, J R

    2016-12-01

    In laser cladding, the potential benefits of wire feeding are considerable. Typical problems with the use of powder, such as gas entrapment, sub-100% material density and low deposition rate are all avoided with the use of wire. However, the use of a powder-based source material is the industry standard, with wire-based deposition generally regarded as an academic curiosity. This is because, although wire-based methods have been shown to be capable of superior quality results, the wire-based process is more difficult to control. In this work, the potential for wire shaping techniques, combined with existing holographic optical element knowledge, is investigated in order to further improve the processing characteristics. Experiments with pre-placed wire showed the ability of shaped wire to provide uniformity of wire melting compared with standard round wire, giving reduced power density requirements and superior control of clad track dilution. When feeding with flat wire, the resulting clad tracks showed a greater level of quality consistency and became less sensitive to alterations in processing conditions. In addition, a 22% increase in deposition rate was achieved. Stacking of multiple layers demonstrated the ability to create fully dense, three-dimensional structures, with directional metallurgical grain growth and uniform chemical structure.

  3. Deposit of thin films of nitrided amorphous carbon using the laser ablation technique

    International Nuclear Information System (INIS)

    Rebollo, P.B.; Escobar A, L.; Camps C, E.; Haro P, E.; Camacho L, M.A.; Muhl S, S.

    2000-01-01

    It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 -4 Torr until 7.5 x 10 -2 Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

  4. Age determination of recent cave deposits using excess Pb-210 - A new technique

    Science.gov (United States)

    Baskaran, M.; Iliffe, Thomas M.

    1993-04-01

    We show that speleothems contain high concentrations of excess Pb-210 and that this Pb-210 excess can be successfully employed to obtain growth rates of speleothems deposited during the last 100 years. Of two specimens analyzed, a tubular 'soda straw' stalactite yielded a longitudinal growth rate of 1.1 mm/yr, while a normal icicle-shaped stalactite had a lateral growth rate of 0.028 mm/yr. The mass growth rates of these two speleothems (149 and 78 mg/yr respectively) are comparable within a factor of two. Studies of fine-scale variations in the isotopic composition of recent speleothems will help to corroborate the validity of palaeoclimate records obtained using longer lived isotopes and extending back into Pleistocene.

  5. Electrospray-deposition of graphene electrodes: a simple technique to build high-performance supercapacitors.

    Science.gov (United States)

    Tang, Huaichao; Yang, Cheng; Lin, Ziyin; Yang, Quanhong; Kang, Feiyu; Wong, Ching Ping

    2015-05-28

    Here we report an electrostatic spray deposition method to prepare three-dimensional porous graphene electrodes for supercapacitor applications. The symmetric supercapacitor exhibits excellent specific capacitance (366 F g(-1) at 1 A g(-1) in 6 M KOH) and long cycle life (108% capacitance retention up to 40 000 cycles). Moreover, the energy densities of the organic and aqueous electrolyte based supercapacitors reach 22.9 and 8.1 Wh kg(-1) when the power densities are 119.2 and 15.4 kW kg(-1), respectively. Compared with the previously reported graphene based supercapacitors, the improved properties could be attributed to the excellent three-dimensional open porous electrode structure, which is favorable for the ion diffusion and electron transport. In addition, this method provides a simple electrode-fabrication route without the involvement of conducting additives and binders. It may find vast applications in thin and miniaturized energy storage scenarios.

  6. Thin films of NdFeB deposited by PLD technique

    International Nuclear Information System (INIS)

    Constantinescu, C.; Scarisoreanu, N.; Moldovan, A.; Dinescu, M.; Petrescu, L.; Epureanu, G.

    2007-01-01

    Neodymium-iron-boron (NdFeB) is a material with important magnetic properties, mostly used in permanent magnet fabrication. Thin layers of NdFeB are needed for miniaturization in electrical engineering, electronics and for high-tech devices. In this paper we applied pulsed lased deposition (PLD) in vacuum for obtaining thin films of NdFeB from stoichiometric targets. The influence of different buffer layers and of the laser parameters (wavelength and fluence) on the NdFeB structures, composition and magnetic properties have been investigated. The obtained structures were characterized by atomic force microscopy (AFM) and optical microscopy. Vibrating sample magnetometry (VSM) has been performed for specific magnetic characterization

  7. Thin films of NdFeB deposited by PLD technique

    Energy Technology Data Exchange (ETDEWEB)

    Constantinescu, C. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania); Scarisoreanu, N. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania); Moldovan, A. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania)]. E-mail: dinescum@ifin.nipne.ro; Petrescu, L. [Department of Electrical Engineering, ' Politehnica' University of Bucharest, 313 Spl. Independentei, 060042 Bucharest (Romania); Epureanu, G. [Department of Electrical Engineering, ' Politehnica' University of Bucharest, 313 Spl. Independentei, 060042 Bucharest (Romania)

    2007-07-31

    Neodymium-iron-boron (NdFeB) is a material with important magnetic properties, mostly used in permanent magnet fabrication. Thin layers of NdFeB are needed for miniaturization in electrical engineering, electronics and for high-tech devices. In this paper we applied pulsed lased deposition (PLD) in vacuum for obtaining thin films of NdFeB from stoichiometric targets. The influence of different buffer layers and of the laser parameters (wavelength and fluence) on the NdFeB structures, composition and magnetic properties have been investigated. The obtained structures were characterized by atomic force microscopy (AFM) and optical microscopy. Vibrating sample magnetometry (VSM) has been performed for specific magnetic characterization.

  8. Evaluation and study of advanced optical contamination, deposition, measurement, and removal techniques. [including computer programs and ultraviolet reflection analysis

    Science.gov (United States)

    Linford, R. M. F.; Allen, T. H.; Dillow, C. F.

    1975-01-01

    A program is described to design, fabricate and install an experimental work chamber assembly (WCA) to provide a wide range of experimental capability. The WCA incorporates several techniques for studying the kinetics of contaminant films and their effect on optical surfaces. It incorporates the capability for depositing both optical and contaminant films on temperature-controlled samples, and for in-situ measurements of the vacuum ultraviolet reflectance. Ellipsometer optics are mounted on the chamber for film thickness determinations, and other features include access ports for radiation sources and instrumentation. Several supporting studies were conducted to define specific chamber requirements, to determine the sensitivity of the measurement techniques to be incorporated in the chamber, and to establish procedures for handling samples prior to their installation in the chamber. A bibliography and literature survey of contamination-related articles is included.

  9. Research Update: Large-area deposition, coating, printing, and processing techniques for the upscaling of perovskite solar cell technology

    Directory of Open Access Journals (Sweden)

    Stefano Razza

    2016-09-01

    Full Text Available To bring perovskite solar cells to the industrial world, performance must be maintained at the photovoltaic module scale. Here we present large-area manufacturing and processing options applicable to large-area cells and modules. Printing and coating techniques, such as blade coating, slot-die coating, spray coating, screen printing, inkjet printing, and gravure printing (as alternatives to spin coating, as well as vacuum or vapor based deposition and laser patterning techniques are being developed for an effective scale-up of the technology. The latter also enables the manufacture of solar modules on flexible substrates, an option beneficial for many applications and for roll-to-roll production.

  10. Design of a safe facility for the metalorganic chemical vapor deposition of high-purity GaAs and AlGaAs

    Science.gov (United States)

    Messham, R. L.; Tucker, W. K.

    1986-09-01

    A metalorganic chemical vapor deposition (MOCVD) facility designed to safely handle highly toxic and pyrophoric growth materials is described. The system concept is based on remote operation, passive flow restriction, and forced air dilution to maintain safe gas concentrations under normal running and catastrophic system failure conditions. MOCVD is a key materials technology for advanced high-frequency optical and microwave devices. At this time, the use of highly toxic arsine as an arsenic source is dictated by critical device purity, reproducibility, and doping control requirements. The handling and use of this gas is a primary feature in the design of any safe facility for MOCVD growth of high-quality GaAs/AlGaAs. After a critical review of presently available effluent treatment techniques, it was concluded that a combination of flow restriction and dilution presented the most reliable treatment. Measured flow rates through orifices from 0.002 to 0.005 inch in diameter were compared to calculated values. A 0.002 inch orifice located in the cylinder valve or CGA fitting, combined with a cylinder of pure liquid arsine (205 psi), limits the maximum gas flow to ≪1 lpm. Such a flow can then be vented through a dedicated exhaust system where an additional forced injection of diluting air reduces the gas concentration to acceptable levels. In the final Westinghouse R&D Center design, the use of low-pressure pure arsine, flow restriction, and stack air injection has reduced the maximum stack exist gas concentration to below 25% of the IDLH level for arsine under total and catastrophic MOCVD facility equipment failure conditions. The elimination of potential problems with purging behind such orifices using carefully designed purging procedures and a microprocessor-controlled purging system are described. The IDLH level is defined by the OSHA and NIOSH standards completion program and represents the maximum level from which one could escape within 30 min without any

  11. Organic-inorganic field effect transistor with SnI-based perovskite channel layer using vapor phase deposition technique

    Science.gov (United States)

    Matsushima, Toshinori; Yasuda, Takeshi; Fujita, Katsuhiko; Tsutsui, Tetsuo

    2003-11-01

    High field-effect hole mobility of (formula available in paper)and threshold voltage is -3.2 V) in organic-inorganic layered perovskite film (formula available in paper)prepared by a vapor phase deposition technique have been demonstrated through the octadecyltrichlorosilane treatment of substrate. Previously, the (formula available in paper)films prepared on the octadecyltrichlorosilane-covered substrates using a vapor evaporation showed not only intense exciton absorption and photoluminescence in the optical spectroscopy but also excellent crystallinity and large grain structure in X-ray and atomic force microscopic studies. Especially, the (formula available in paper)structure in the region below few nm closed to the surface of octadecyltrichlorosilane monolayer was drastically improved in comparison with that on the non-covered substrate. Though our initial (formula available in paper)films via a same sequence of preparation of (formula available in paper)and octadecyltrichlorosilane monolayer did not show the field-effect properties because of a lack of spectral, structural, and morphological features. The unformation of favorable (formula available in paper)structure in the very thin region, that is very important for the field-effect transistors to transport electrons or holes, closed to the surface of non-covered (formula available in paper)dielectric layer was also one of the problems for no observation of them. By adding further optimization and development, such as deposition rate of perovskite, substrate heating during deposition, and tuning device architecture, with hydrophobic treatment, the vacuum-deposited (formula available in paper)have achieved above-described high performance in organic-inorganic hybrid transistors.

  12. Applications of prospecting geochemical techniques to the search for and to the study of uranium deposits in metropolitan France

    International Nuclear Information System (INIS)

    Grimbert, Arnold

    1957-01-01

    After having recalled facts which leaded the CEA to use new geochemical techniques for the prospecting of uranium deposits through sampling and analysis of soils and waters, the author describes the organisation and methods implemented for this prospecting activity: team composition for sampling and analysis, role of each engineer and technician in the prospecting stages (preliminary study, routine prospecting, result interpretation), sampling and analysis processes. He also reports campaigns of geochemical prospecting: study of the La Chapelle Largeau deposit (objectives, geological context, preliminary study, routine prospecting, study of geochemical anomalies), tactical research on Verneix indices (study of radioactivity anomaly discovered by radio-prospecting), strategical searches in a non prospected area in the South of Avallon. The author discusses the issues of efficiency and cost price of this geochemical prospecting technique in soils and in waters. Appendices present the equipment and operation modality for soil sampling, and for soil sample preparation, and principles, equipment and products for soil analysis and for water analysis [fr

  13. Carbon thin films deposited by the magnetron sputtering technique using cobalt, copper and nickel as buffer-layers

    International Nuclear Information System (INIS)

    Costa e Silva, Danilo Lopes

    2015-01-01

    In this work, carbon thin films were produced by the magnetron sputtering technique using single crystal substrates of alumina c-plane (0001) and Si (111) and Si (100) substrates, employing Co, Ni and Cu as intermediate films (buffer-layers). The depositions were conducted in three stages, first with cobalt buffer-layers where only after the production of a large number of samples, the depositions using cooper buffer-layers were carried out on Si substrates. Then, depositions were performed with nickel buffer layers using single-crystal alumina substrates. The crystallinity of the carbon films was evaluated by using the technique of Raman spectroscopy and, then, by X-ray diffraction (XRD). The morphological characterization of the films was performed by scanning electron microscopy (SEM and FEG-SEM) and high-resolution transmission electron microscopy (HRTEM). The XRD peaks related to the carbon films were observed only in the results of the samples with cobalt and nickel buffer-layers. The Raman spectroscopy showed that the carbon films with the best degree of crystallinity were the ones produced with Si (111) substrates, for the Cu buffers, and sapphire substrates for the Ni and Co buffers, where the latter resulted in a sample with the best crystallinity of all the ones produced in this work. It was observed that the cobalt has low recovering over the alumina substrates when compared to the nickel. Sorption tests of Ce ions by the carbon films were conducted in two samples and it was observed that the sorption did not occur probably because of the low crystallinity of the carbon films in both samples. (author)

  14. Effect of Coating Thickness on the Properties of TiN Coatings Deposited on Tool Steels Using Cathodic Arc Pvd Technique

    Science.gov (United States)

    Mubarak, A.; Akhter, Parvez; Hamzah, Esah; Mohd Toff, Mohd Radzi Hj.; Qazi, Ishtiaq A.

    Titanium nitride (TiN) widely used as hard coating material, was coated on tool steels, namely on high-speed steel (HSS) and D2 tool steel by physical vapor deposition method. The study concentrated on cathodic arc physical vapor deposition (CAPVD), a technique used for the deposition of hard coatings for tooling applications, and which has many advantages. The main drawback of this technique, however, is the formation of macrodroplets (MDs) during deposition, resulting in films with rougher morphology. Various standard characterization techniques and equipment, such as electron microscopy, atomic force microscopy, hardness testing machine, scratch tester, and pin-on-disc machine, were used to analyze and quantify the following properties and parameters: surface morphology, thickness, hardness, adhesion, and coefficient of friction (COF) of the deposited coatings. Surface morphology revealed that the MDs produced during the etching stage, protruded through the TiN film, resulting in film with deteriorated surface features. Both coating thickness and indentation loads influenced the hardness of the deposited coatings. The coatings deposited on HSS exhibit better adhesion compared to those on D2 tool steel. Standard deviation indicates that the coating deposited with thickness around 6.7 μm showed the most stable trend of COF versus sliding distance.

  15. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    Directory of Open Access Journals (Sweden)

    Wagner Anacleto Pinheiro

    2006-03-01

    Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

  16. Atomic force microscopy and Langmuir–Blodgett monolayer technique to assess contact lens deposits and human meibum extracts

    Directory of Open Access Journals (Sweden)

    Sarah Hagedorn

    2015-07-01

    Conclusions: MGD and non-MGD participant-worn CL deposition were found to differ in type, amount, and pattern of lens deposits. Lipids from MGD participants deposited irregularly whereas lipids from non-MGD participants showed more uniformity.

  17. Electric characterization of GaAs deposited on porous silicon by electrodeposition technique

    International Nuclear Information System (INIS)

    Lajnef, M.; Chtourou, R.; Ezzaouia, H.

    2010-01-01

    GaAs thin films were synthesized on porous Si substrate by the electrodeposition technique. The X-ray diffraction studies showed that the as-grown films were crystallised in mixed phase nature orthorhombic and cubic of GaAs. The GaAs film was then electrically characterized using current-voltage (I-V) and capacitance-voltage (C-V) techniques by the way of Al/GaAs Schottky junctions. The electric analysis allowed us to determine the n factor and the barrier height φ b0 parameters of Al/GaAs Schottky junctions. The (C-V) characteristics were recorded at frequency signal 1 MHz in order to identify the effect of the surface states on the behaviour of the capacitance of the device.

  18. Electric characterization of GaAs deposited on porous silicon by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Lajnef, M., E-mail: Mohamed.lajnef@yahoo.fr [Laboratoire de Photovoltaique et de Semi-conducteurs, Centre de Recherche et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia); Chtourou, R.; Ezzaouia, H. [Laboratoire de Photovoltaique et de Semi-conducteurs, Centre de Recherche et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)

    2010-03-01

    GaAs thin films were synthesized on porous Si substrate by the electrodeposition technique. The X-ray diffraction studies showed that the as-grown films were crystallised in mixed phase nature orthorhombic and cubic of GaAs. The GaAs film was then electrically characterized using current-voltage (I-V) and capacitance-voltage (C-V) techniques by the way of Al/GaAs Schottky junctions. The electric analysis allowed us to determine the n factor and the barrier height {phi}{sub b0} parameters of Al/GaAs Schottky junctions. The (C-V) characteristics were recorded at frequency signal 1 MHz in order to identify the effect of the surface states on the behaviour of the capacitance of the device.

  19. Application of physical separation techniques for waste utilization and management - case studies from Indian uranium deposits

    International Nuclear Information System (INIS)

    Anand Rao, K.; Sreenivas, T.

    2013-01-01

    The importance of physical beneficiation techniques in metallurgical industry showed gradual decline due to decreasing ore grades and very-fine size dissemination of valuable minerals in the host matrix. However, this technology regained prominence in recent past due to their utility in resource recycle, waste utilization, waste treatment and environmental remediation. Hybrid processes combined with physical, chemical and biological technology is now developing such that the idea of sustainable development is implemented. The uranium ore processing industry has always been under intense public scanner for some of the apprehensions, chiefly radioactivity, inspite of its immense energy delivering potential. Besides this, the chemical compounds formed due to gangue mineral reactivity and their carry-over to tailings pond added further owes. However, conscious scientific efforts are being made to contain these hazards to permissible levels by application of various remedial methods of which the physical separation techniques too are quite prominent

  20. Nuclear techniques for in situ evaluation of coal and mineral deposits

    International Nuclear Information System (INIS)

    Borsaru, M.

    1993-01-01

    This paper reviews developments in in situ analysis of minerals and coal by nuclear borehole logging. Developments in the oil, gas and uranium industries are not discussed in the present paper unless they have direct applications in the mineral industry (e.g. multi-element analysis and development of spectral litho-density tools). The review covers techniques developed mostly in the last decade and is based on work published in North America, Europe and Australia. (author)

  1. Fast growth rate of epitaxial β-Ga2O3 by close coupled showerhead MOCVD

    Science.gov (United States)

    Alema, Fikadu; Hertog, Brian; Osinsky, Andrei; Mukhopadhyay, Partha; Toporkov, Mykyta; Schoenfeld, Winston V.

    2017-10-01

    We report on the growth of epitaxial β-Ga2O3 thin films on c-plane sapphire substrates using a close coupled showerhead MOCVD reactor. Ga(DPM)3 (DPM = dipivaloylmethanate), triethylgallium (TEGa) and trimethylgallium (TMGa) metal organic (MO) precursors were used as Ga sources and molecular oxygen was used for oxidation. Films grown from each of the Ga sources had high growth rates, with up to 10 μm/hr achieved using a TMGa precursor at a substrate temperature of 900 °C. As confirmed by X-ray diffraction, the films grown from each of the Ga sources were the monoclinic (2 bar 0 1) oriented β-Ga2O3 phase. The optical bandgap of the films was also estimated to be ∼4.9 eV. The fast growth rate of β-Ga2O3 thin films obtained using various Ga-precursors has been achieved due to the close couple showerhead design of the MOCVD reactor as well as the separate injection of oxygen and MO precursors, preventing the premature oxidation of the MO sources. These results suggest a pathway to overcoming the long-standing challenge of realizing fast growth rates for Ga2O3 using the MOCVD method.

  2. Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique

    Science.gov (United States)

    Qiang, Lei; Liang, Xiaoci; Cai, Guangshuo; Pei, Yanli; Yao, Ruohe; Wang, Gang

    2018-06-01

    Indium zinc oxide (IZO) thin film transistor (TFT) deposited by solution method is of considerable technological interest as it is a key component for the fabrication of flexible and cheap transparent electronic devices. To obtain a principal understanding of physical properties of solution-processed IZO TFT, a new drain current model that account for the charge transport is proposed. The formulation is developed by incorporating the effect of gate voltage on mobility and threshold voltage with the carrier charges. It is demonstrated that in IZO TFTs the below threshold regime should be divided into two sections: EC - EF > 3kT and EC - EF ≤ 3kT, where kT is the thermal energy, EF and EC represent the Fermi level and the conduction band edge, respectively. Additionally, in order to describe conduction mechanisms more accurately, the extended mobility edge model is conjoined, which can also get rid of the complicated and lengthy computations. The good agreement between measured and calculated results confirms the efficiency of this model for the design of integrated large-area thin film circuits.

  3. Hydrogen ratios and profiles in deposited amorphous and polycrystalline films and in metals using nuclear techniques

    International Nuclear Information System (INIS)

    Benenson, R.E.; Feldman, L.C.; Bagley, B.G.

    1980-01-01

    Plasma- and chemical vapor deposited films containing hydrogen, Si, B and O, but of unknown thickness and stoichiometry have been assigned concentration ratios through a combination of H-profiling using the 1 H( 15 N,αγ) 12 C(4.43 MeV) reaction and RBS analysis. Relatively intense 15 N ++ beams exceeding the 6.38 MeV resonance energy have been obtained from a 3.75 MeV accelerator with a commercial ion source and terminal analysis. A discussion is given of the method of obtaining film concentration ratios in some representative cases. A search was made for H at the SiO 2 -Si interface. Some preliminary investigations have been made on the H concentration in several metals as supplied: Nb, V, Ta, Al, Ni, OFHC Cu, Ti, Mo and steel and on the effect of acid dips in loading H. Hydrogen in acid-loaded steel migrated under the influence of the probing 15 N beam, but relaxed back when the beam was removed. (orig.)

  4. Identification of sources of tar balls deposited along the Goa coast, India, using fingerprinting techniques

    International Nuclear Information System (INIS)

    Suneel, V.; Vethamony, P.; Zakaria, M.P.; Naik, B.G.; Prasad, K.V.S.R.

    2013-01-01

    Highlights: ► This is first fingerprinting study in India on identification of source of tar balls. ► Tar balls were formed from tanker-wash spills and they resemble floating tar ball. ► δ 13 C values of Bombay High crude oil and the present tar balls do not match. ► Compound specific stable carbon isotope analysis confirmed the source of tar balls. ► Source is confirmed as the South East Asian Crude Oil and not the Bombay High crude. -- Abstract: Deposition of tar balls along the coast of Goa, India is a common phenomenon during the southwest monsoon. Representative tar ball samples collected from various beaches of Goa and one Bombay High (BH) crude oil sample were subjected to fingerprint analysis based on diagnostic ratios of n-alkane, biomarkers of pentacyclic tri-terpanes and compound specific stable carbon isotope (δ 13 C) analysis to confirm the source. The results were compared with the published data of Middle East Crude Oil (MECO) and South East Asian Crude Oil (SEACO). The results revealed that the tar balls were from tanker-wash derived spills. The study also confirmed that the source is not the BH, but SEACO. The present study suggests that the biomarkers of alkanes and hopanes coupled with stable carbon isotope analysis act as a powerful tool for tracing the source of tar balls, particularly when the source specific biomarkers fail to distinguish the source

  5. Numerical Simulation of Molten Flow in Directed Energy Deposition Using an Iterative Geometry Technique

    Science.gov (United States)

    Vincent, Timothy J.; Rumpfkeil, Markus P.; Chaudhary, Anil

    2018-06-01

    The complex, multi-faceted physics of laser-based additive metals processing tends to demand high-fidelity models and costly simulation tools to provide predictions accurate enough to aid in selecting process parameters. Of particular difficulty is the accurate determination of melt pool shape and size, which are useful for predicting lack-of-fusion, as this typically requires an adequate treatment of thermal and fluid flow. In this article we describe a novel numerical simulation tool which aims to achieve a balance between accuracy and cost. This is accomplished by making simplifying assumptions regarding the behavior of the gas-liquid interface for processes with a moderate energy density, such as Laser Engineered Net Shaping (LENS). The details of the implementation, which is based on the solver simpleFoam of the well-known software suite OpenFOAM, are given here and the tool is verified and validated for a LENS process involving Ti-6Al-4V. The results indicate that the new tool predicts width and height of a deposited track to engineering accuracy levels.

  6. Numerical Simulation of Molten Flow in Directed Energy Deposition Using an Iterative Geometry Technique

    Science.gov (United States)

    Vincent, Timothy J.; Rumpfkeil, Markus P.; Chaudhary, Anil

    2018-03-01

    The complex, multi-faceted physics of laser-based additive metals processing tends to demand high-fidelity models and costly simulation tools to provide predictions accurate enough to aid in selecting process parameters. Of particular difficulty is the accurate determination of melt pool shape and size, which are useful for predicting lack-of-fusion, as this typically requires an adequate treatment of thermal and fluid flow. In this article we describe a novel numerical simulation tool which aims to achieve a balance between accuracy and cost. This is accomplished by making simplifying assumptions regarding the behavior of the gas-liquid interface for processes with a moderate energy density, such as Laser Engineered Net Shaping (LENS). The details of the implementation, which is based on the solver simpleFoam of the well-known software suite OpenFOAM, are given here and the tool is verified and validated for a LENS process involving Ti-6Al-4V. The results indicate that the new tool predicts width and height of a deposited track to engineering accuracy levels.

  7. Structure and Properties of Diamond-Like Carbon Films Deposited by PACVD Technique on Light Alloys

    Directory of Open Access Journals (Sweden)

    Tański T.

    2016-09-01

    Full Text Available The investigations presented in this paper describe surface treatment performed on samples of heat-treated cast magnesium and aluminium alloy. The structure and chemical composition as well as the functional and mechanical properties of the obtained gradient/monolithic films were analysed by high resolution transmission electron microscopy and scanning electron microscopy, Raman spectroscopy, the ball-on-disk tribotester and scratch testing. Moreover, investigation of the electrochemical corrosion behaviour of the samples was carried out by means of potentiodynamic polarisation curves in 1-M NaCl solution. The coatings produced by chemical vapour deposition did not reveal any delamination or defects and they adhere closely to the substrate. The coating thickness was in a range of up to 2.5 microns. Investigations using Raman spectra of the DLC films confirmed a multiphase character of the diamond-like carbon layer, revealing the sp2 and sp3 electron hybridisation responsible for both the hardness and the friction coefficient. The best wear resistance test results were obtained for the magnesium alloy substrate - AZ61, for which the measured value of the friction path length was equal to 630 m.

  8. MOCVD of zirconium oxide thin films: Synthesis and characterization

    International Nuclear Information System (INIS)

    Torres-Huerta, A.M.; Dominguez-Crespo, M.A.; Ramirez-Meneses, E.; Vargas-Garcia, J.R.

    2009-01-01

    The synthesis of thin films of zirconia often produces tetragonal or cubic phases, which are stable at high temperatures, but that can be transformed into the monoclinic form by cooling. In the present study, we report the deposition of thin zirconium dioxide films by metalorganic chemical vapor deposition using zirconium (IV)-acetylacetonate as precursor. Colorless, porous, homogeneous and well adherent ZrO 2 thin films in the cubic phase were obtained within the temperature range going from 873 to 973 K. The deposits presented a preferential orientation towards the (1 1 1) and (2 2 0) planes as the substrate temperature was increased, and a crystal size ranging between 20 and 25 nm. The kinetics is believed to result from film growth involving the deposition and aggregation of nanosized primary particles produced during the CVD process. A mismatch between the experimental results obtained here and the thermodynamic prediction was found, which can be associated with the intrinsic nature of the nanostructured materials, which present a high density of interfaces.

  9. MOCVD of zirconium oxide thin films: Synthesis and characterization

    Energy Technology Data Exchange (ETDEWEB)

    Torres-Huerta, A.M., E-mail: atohuer@hotmail.com [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Altamira, Instituto Politecnico Nacional, Km. 14.5 Carr. Tampico-Puerto Industrial, C.P. 89600, Altamira, Tamaulipas (Mexico); Dominguez-Crespo, M.A.; Ramirez-Meneses, E. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Altamira, Instituto Politecnico Nacional, Km. 14.5 Carr. Tampico-Puerto Industrial, C.P. 89600, Altamira, Tamaulipas (Mexico); Vargas-Garcia, J.R. [ESIQIE, Departamento de Metalurgia y Materiales, Instituto Politecnico Nacional. A.P. 75-876, 07300 Mexico, D.F. (Mexico)

    2009-02-15

    The synthesis of thin films of zirconia often produces tetragonal or cubic phases, which are stable at high temperatures, but that can be transformed into the monoclinic form by cooling. In the present study, we report the deposition of thin zirconium dioxide films by metalorganic chemical vapor deposition using zirconium (IV)-acetylacetonate as precursor. Colorless, porous, homogeneous and well adherent ZrO{sub 2} thin films in the cubic phase were obtained within the temperature range going from 873 to 973 K. The deposits presented a preferential orientation towards the (1 1 1) and (2 2 0) planes as the substrate temperature was increased, and a crystal size ranging between 20 and 25 nm. The kinetics is believed to result from film growth involving the deposition and aggregation of nanosized primary particles produced during the CVD process. A mismatch between the experimental results obtained here and the thermodynamic prediction was found, which can be associated with the intrinsic nature of the nanostructured materials, which present a high density of interfaces.

  10. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Ahumada-Lazo, R.; Torres-Martínez, L.M. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Ruíz-Gómez, M.A. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Departmento de Física Aplicada, CINVESTAV-IPN, Antigua Carretera a Progreso km 6, Mérida, Yucatán 97310, México (Mexico); Vega-Becerra, O.E. [Centro de Investigación en Materiales Avanzados S.C, Alianza norte 202, Parque de Investigación e Innovación Tecnológica, C.P. 66600 Apodaca Nuevo León, México (Mexico); and others

    2014-12-15

    Graphical abstract: - Highlights: • Decolorization of Orange G dye using highly c-axis-oriented ZnO thin films. • The flake-shaped film shows superior and stable photoactivity at a wide range of pH. • The highest photodecolorization was achieved at pH of 7. • The exposure of (101) and (100) facets enhanced the photoactivity. • ZnO thin films exhibit a promising performance as recyclable photocatalysts. - Abstract: The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV–visible spectroscopy (UV–Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media.

  11. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    International Nuclear Information System (INIS)

    Ahumada-Lazo, R.; Torres-Martínez, L.M.; Ruíz-Gómez, M.A.; Vega-Becerra, O.E.

    2014-01-01

    Graphical abstract: - Highlights: • Decolorization of Orange G dye using highly c-axis-oriented ZnO thin films. • The flake-shaped film shows superior and stable photoactivity at a wide range of pH. • The highest photodecolorization was achieved at pH of 7. • The exposure of (101) and (100) facets enhanced the photoactivity. • ZnO thin films exhibit a promising performance as recyclable photocatalysts. - Abstract: The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV–visible spectroscopy (UV–Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media

  12. Development of Functional Thin Polymer Films Using a Layer-by-Layer Deposition Technique.

    Science.gov (United States)

    Yoshida, Kentaro

    2017-01-01

    Functional thin films containing insulin were prepared using layer-by-layer (LbL) deposition of insulin and negatively- or positively-charged polymers on the surface of solid substrates. LbL films composed of insulin and negatively-charged polymers such as poly(acrylic acid) (PAA), poly(vinylsulfate) (PVS), and dextran sulfate (DS) were prepared through electrostatic affinity between the materials. The insulin/PAA, insulin/PVS, and insulin/DS films were stable in acidic solutions, whereas they decomposed under physiological conditions as a result of a change in the net electric charge of insulin from positive to negative. Interestingly, the insulin-containing LbL films were stable even in the presence of a digestive-enzyme (pepcin) at pH 1.4 (stomach pH). In contrast, LbL films consisting of insulin and positively-charged polymers such as poly(allylamine hydrochloride) (PAH) decomposed in acidic solutions due to the positive charges of insulin generated in acidic media. The insulin-containing LbL films can be prepared not only on the surface of flat substrates, such as quartz slides, but also on the surface of microparticles, such as poly(lactic acid) (PLA) microbeads. Thus, insulin-containing LbL film-coated PLA microbeads can be handled as a powder. In addition, insulin-containing microcapsules were prepared by coating LbL films on the surface of insulin-doped calcium carbonate (CaCO 3 ) microparticles, followed by dissolution of the CaCO 3 core. The release of insulin from the microcapsules was accelerated at pH 7.4, whereas it was suppressed in acidic solutions. These results suggest the potential use of insulin-containing microcapsules in the development of oral formulations of insulin.

  13. A graphical technique for distinguishing plant material and soil from atmospheric deposition in biomonitors

    International Nuclear Information System (INIS)

    Rahn, K.A.

    2000-01-01

    The paper explores the limits to which a new graphical technique can distinguish the various hierarchical levels of sources of trace elements within biomonitors. When applied to data from Portuguese lichens, it appears to resolve four levels of sources, from plant material down to individual types of pollution. Careful factor analysis appears to offer very similar results, being weaker than the graphical method in some aspects and stronger in others. As a result, it now seems possible to determine sources for elements in lichens with better precision and confidence than was available previously. (author)

  14. Soft x-ray-controlled dose deposition in yeast cells: techniques, model, and biological assessment

    Science.gov (United States)

    Milani, Marziale; Batani, Dimitri; Conti, Aldo; Masini, Alessandra; Costato, Michele; Pozzi, Achille; Turcu, I. C. Edmond

    1996-12-01

    A procedure is presented to release soft x-rays onto yeast cell membrane allegedly damaging the resident enzymatic processes connected with fermentation. The damage is expected to be restricted to regulating fermentation processes without interference with respiration. By this technique fermentation is followed leading to CO2 production, and respiration resulting in global pressure measurements. A solid state pressure sensor system has been developed linked to a data acquisition system. Yeast cells cultures have been investigated at different concentrations and with different nutrients. A non-monotone response in CO2 production as a function of the delivered x-ray dose is observed.

  15. Critical assessment of the deposition based dosimetric technique for radon/thoron decay products

    International Nuclear Information System (INIS)

    Mayya, Y.S.

    2010-01-01

    Inhalation doses due to radon ( 222 Rn) and thoron ( 220 Rn) are predominantly contributed by their decay products and not due to the gases themselves. Decay product measurements are being carried out essentially by either short-term active measurement like by air-sampling on a substrate followed by alpha or beta counting or by continuous active monitoring techniques based on silicon barrier detector. However, due to non-availability of satisfactory passive measurement techniques for the progeny species, it has been a usual practice to estimate the long time averaged progeny concentration from measured gas concentration using an assumed equilibrium factor. To be accurate, one is required to measure the equilibrium factor in situ along with the gas concentration. This being not practical, the assigned equilibrium factor (0.4 for indoor and 0.8 for outdoor for 222 Rn) approach has been an inevitable, though uncertain, part of the dosimetric strategies in both occupational and public domains. Further, in the case of thoron decay products however, equilibrium factor is of far more questionable validity. Thus, there is a need to shift from gas based dosimetric paradigm to that based on direct detection of progeny species

  16. Alloying, co-doping, and annealing effects on the magnetic and optical properties of MOCVD-grown Ga1-xMn xN

    International Nuclear Information System (INIS)

    Kane, Matthew H.; Strassburg, Martin; Asghar, Ali; Fenwick, William E.; Senawiratne, Jayantha; Song, Qing; Summers, Christopher J.; Zhang, Z. John; Dietz, Nikolaus; Ferguson, Ian T.

    2006-01-01

    Recent theoretical work for Ga 1-x Mn x N predicts ferromagnetism in this materials system with Curie temperatures above room temperature. Ferromagnetic behavior observed in Ga 1-x Mn x N is still controversial, as there are conflicting experimental reports owing to the disparity in crystalline quality and phase purity of Ga 1-x Mn x N produced by different methods. In this work, metal-organic chemical vapor deposition (MOCVD) has been used to grow high-quality epitaxial films of Ga 1-x Mn x N of varying thickness and manganese doping levels using Cp 2 Mn as the Mn source. Crystalline quality and phase purity were determined by high-resolution X-ray diffraction, indicating that no macroscopic second phases are formed. Atomic force microscopy revealed MOCVD-like step flow growth patterns and a mean surface roughness of 0.378 nm in optimally grown films, which is close to that from the as-grown template layer of 0.330 nm. No change in the growth mechanism and morphology with Mn incorporation is observed. A uniform Mn concentration in the epitaxial layers is confirmed by secondary ion mass spectroscopy. SQUID measurements showed an apparent room temperature ferromagnetic hysteresis with saturation magnetizations of over 2 μ B /Mn at x = 0.008, which decreases with increasing Mn incorporation. Upon high-temperature annealing, numerous changes are observed in these properties, including an increase in surface roughness due to surface decomposition and a large decrease in the magnetic signature. A similar decrease in the magnetic signature is observed upon co-doping with the shallow donor silicon during the growth process. These results demonstrate the critical importance of controlling the Fermi level relative to the Mn 2+/3+ acceptor level in Ga 1-x Mn x N in order to achieve strong ferromagnetism

  17. Atmospheric heavy metal deposition in Northern Vietnam: Hanoi and Thainguyen case study using the moss biomonitoring technique, INAA and AAS.

    Science.gov (United States)

    Viet, Hung Nguyen; Frontasyeva, Marina Vladimirovna; Thi, Thu My Trinh; Gilbert, Daniel; Bernard, Nadine

    2010-06-01

    The moss technique is widely used to monitor atmospheric deposition of heavy metals in many countries in Europe, whereas this technique is scarcely used in Asia. To implement this international reliable and cheap methodology in the Asian countries, it is necessary to find proper moss types typical for the Asian environment and suitable for the biomonitoring purposes. Such a case study was undertaken in Vietnam for assessing the environmental situation in strongly contaminated areas using local species of moss Barbula indica. The study is focused on two areas characterized by different pollution sources: the Hanoi urban area and the Thainguyen metallurgical zone. Fifty-four moss samples were collected there according to standard sampling procedure adopted in Europe. Two complementary analytical techniques, atomic absorption spectrometry (AAS) and instrumental neutron activation analysis (INAA), were used for determination of elemental concentrations in moss samples. To characterize the pollution sources, multivariate statistical analysis was applied. A total of 38 metal elements were determined in the moss by the two analytical techniques. The results of descriptive statistics of metal concentration in moss from the city center and periphery of Hanoi determined by AAS are presented. The similar results for moss from Thainguyen province determined by INAA and AAS are given also. A comparison of mean elemental concentrations in moss of this work with those in different environmental conditions of other authors provides reasonable information on heavy metal atmospheric deposition levels. Factor loadings and factor scores were used to identify and apportion contamination sources at the sampling sites. The values of percentage of total of factors show two highly different types of pollution in the two examined areas-the Hanoi pollution composition with high portion of urban-traffic activity and soil dust (62%), and the one of Thainguyen with factors related to industrial

  18. Atmospheric deposition of heavy metals in transilvanian plateau of romania studied by the moss bio monitoring Technique employing nuclear and related analytical Techniques and gis technology

    International Nuclear Information System (INIS)

    Lucaciu, Adriana; Craciun, L.; Cuculeanu, V.; Eseanu, D.

    2001-01-01

    This paper presents data for 39 elements of 69 moss samples (Hypnum cupressiforme) collected in the Transilvanian Plateau of Romania. This results have obtained in the framework of the project Atmospheric Deposition of Heavy Metals in Rural and Urban Areas of Romania Studied by the Moss Bio monitoring Technique Employing Nuclear and Related Analytical Techniques and GIS Technology carried out under the auspices of the International Atomic Energy Agency, Vienna.The samples collected have been analyzed by ENAA with the exception of Cu, Cd, and Pb which were determined by AAS. IAEA certified materials were used to ensure the quality of the measurements. The regional concentration variations of selected elements are presented in the form of maps constructed by GIS technology. Extremely high values are observed for elements such as Cu, Zn, As and Sb in parts of this territory affected by local metal industries. The levels are among the highest observed in the world, and could be partly responsible for the unfortunate health situation in some of these areas

  19. Optimization of cathodic arc deposition and pulsed plasma melting techniques for growing smooth superconducting Pb photoemissive films for SRF injectors

    Science.gov (United States)

    Nietubyć, Robert; Lorkiewicz, Jerzy; Sekutowicz, Jacek; Smedley, John; Kosińska, Anna

    2018-05-01

    Superconducting photoinjectors have a potential to be the optimal solution for moderate and high current cw operating free electron lasers. For this application, a superconducting lead (Pb) cathode has been proposed to simplify the cathode integration into a 1.3 GHz, TESLA-type, 1.6-cell long purely superconducting gun cavity. In the proposed design, a lead film several micrometres thick is deposited onto a niobium plug attached to the cavity back wall. Traditional lead deposition techniques usually produce very non-uniform emission surfaces and often result in a poor adhesion of the layer. A pulsed plasma melting procedure reducing the non-uniformity of the lead photocathodes is presented. In order to determine the parameters optimal for this procedure, heat transfer from plasma to the film was first modelled to evaluate melting front penetration range and liquid state duration. The obtained results were verified by surface inspection of witness samples. The optimal procedure was used to prepare a photocathode plug, which was then tested in an electron gun. The quantum efficiency and the value of cavity quality factor have been found to satisfy the requirements for an injector of the European-XFEL facility.

  20. Enhancement of the optical and electrical properties of ITO thin films deposited by electron beam evaporation technique

    Science.gov (United States)

    Ali, H. M.; Mohamed, H. A.; Mohamed, S. H.

    2005-08-01

    Indium tin oxide (ITO) is widely utilized in numerous industrial applications due to its unique combined properties of transparency to visible light and electrical conductivity. ITO films were deposited on glass substrates by an electron beam evaporation technique at room temperature from bulk samples, with different thicknesses. The film with 1500 Å thick was selected to perform annealing in the temperature range of 200 400 °C and annealing for varying times from 15 to 120 min at 400 °C. The X-ray diffraction of the films was analyzed in order to investigate its dependence on thickness, and annealing. Electrical and optical measurements were also carried out. Transmittance, optical energy gap, refractive index, carrier concentration, thermal emissivity and resistivity were investigated. It was found that the as-deposited films with different thicknesses were highly absorbing and have relatively poor electrical properties. The films become opaque with increasing the film thickness. After thermal annealing, the resistance decreases and a simultaneous variation in the optical transmission occurs. A transmittance value of 85.5% in the IR region and 82% in the visible region of the spectrum and a resistivity of 2.8 × 10-4 Ω Cm were obtained at annealing temperature of 400 °C for 120 min.

  1. Characteristics of the streak clays of the hyacinth gold deposit by the techniques of DRX and AT

    International Nuclear Information System (INIS)

    Trueba Gaetano, R.; Cabrera Diaz, I.; Casanova Gomez, A.; Aguila Terry, A.; Martinez Montalvo, A.; Canel Carreras, L.; Rodriguez Garcia, J. C.; Alonso Perez, J. A.

    2016-01-01

    It is exposed the investigative work of the mineralogical characteristics of different types of clays present in the veins of the Oro Jacinto deposit through the use of XRD and TA analytical techniques, supported by a study of particle size in the range of 2 mm to 63 μm. Significant feature of these samples is that being crushed they generated high content of fine material below 0.074 mm. This size particles range is presented between 17.68% and 50.78% of samples volume, majority particles being smaller than 0.063 mm, this interstratificated fine material with different types of clay makes the fraction below 74 μm present characteristics of clayey material. The results of XRD analysis and comparative Thermo gravimetric that are achieved for samples of 'Jacinto' gold vein deposit indicate that the clays presented in the fine fractions are: chlorite-montmorillonite; illite; hidromoscovite and muscovite, which turned out to be higher in samples of the grain B eatriz . During the ores formation process of the veins S ur Elena , it is evident that the hydrothermal fluids that led to the formation of the rocks, experienced greater degree of alteration during its transformation into argillite, which is manifested in three mineralogical regularities: Low crystallinity of the chlorite-montmorillonite clay. Transformation of muscovite - hidromoscovite into illite. Presence of abundant calcite in some samples. Higher concentrations of iron oxides (goethite). (Author)

  2. Estimates of soil erosion and deposition of cultivated soil of Nakhla watershed, Morocco, using 137Cs technique and calibration models

    International Nuclear Information System (INIS)

    Bouhlassa, S.; Moukhchane, M.; Aiachi, A.

    2000-01-01

    Despite the effective threat of erosion, for soil preservation and productivity in Morocco, there is still only limited information on rates of soil loss involved. This study is aimed to establish long-term erosion rates on cultivated land in the Nakhla watershed located in the north of the country, using 137 Cs technique. Two sampling strategies were adopted. The first is aimed at establishing areal estimates of erosion, whereas the second, based on a transect approach, intends to determine point erosion. Twenty-one cultivated sites and seven undisturbed sites apparently not affected by erosion or deposition were sampled to 35 cm depth. Nine cores were collected along the transect of 149 m length. The assessment of erosion rates with models varying in complexity from the simple Proportional Model to more complex Mass Balance Models which attempts to include the processes controlling the redistribution of 137 Cs in soil, enables us to demonstrate the significance of soil erosion problem on cultivated land. Erosion rates rises up to 50 t ha -1 yr -1 . The 137 Cs derived erosion rates provide a reliable representation of water erosion pattern in the area, and indicate the importance of tillage process on the redistribution of 137 Cs in soil. For aggrading sites a Constant Rate Supply (CRS) Model had been adapted and introduced to estimate easily the depositional rate. (author) [fr

  3. Microstructural, nanomechanical, and microtribological properties of Pb thin films prepared by pulsed laser deposition and thermal evaporation techniques

    Energy Technology Data Exchange (ETDEWEB)

    Broitman, Esteban, E-mail: esbro@ifm.liu.se [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping (Sweden); Flores-Ruiz, Francisco J. [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping, Sweden and Centro de Investigación y de Estudios Avanzados del I.P.N., Unidad Querétaro, Querétaro 76230 (Mexico); Di Giulio, Massimo [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Gontad, Francisco; Lorusso, Antonella; Perrone, Alessio [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce, Italy and INFN-Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy)

    2016-03-15

    In this work, the authors compare the morphological, structural, nanomechanical, and microtribological properties of Pb films deposited by thermal evaporation (TE) and pulsed laser deposition (PLD) techniques onto Si (111) substrates. Films were investigated by scanning electron microscopy, surface probe microscopy, and x-ray diffraction in θ-2θ geometry to determine their morphology, root-mean-square (RMS) roughness, and microstructure, respectively. TE films showed a percolated morphology with densely packed fibrous grains while PLD films had a granular morphology with a columnar and tightly packed structure in accordance with the zone growth model of Thornton. Moreover, PLD films presented a more polycrystalline structure with respect to TE films, with RMS roughness of 14 and 10 nm, respectively. Hardness and elastic modulus vary from 2.1 to 0.8 GPa and from 14 to 10 GPa for PLD and TE films, respectively. A reciprocal friction test has shown that PLD films have lower friction coefficient and wear rate than TE films. Our study has demonstrated for first time that, at the microscale, Pb films do not show the same simple lubricious properties measured at the macroscale.

  4. Improvement of the inlet system for the spray-jet technique for use in spectroscopic studies and molecular deposition

    International Nuclear Information System (INIS)

    Yamada, Toshiki; Shinohara, Hidenori; Mashiko, Shinro

    2006-01-01

    We previously developed a molecular beam apparatus with a spray-jet technique in order to produce a molecular beam of non-volatile molecules in vacuum from the sprayed mist of a sample solution. The apparatus is for use in spectroscopic studies or a means of molecular deposition. The spray-jet inlet system consisted of an ultrasonic nebulizer, an inlet chamber and a pulsed nozzle. In the present paper, further improvements to the spray-jet inlet system are reported. The main improvement is the introduction of a pneumatic nebulizer to replace the previous ultrasonic nebulizer. The efficiency of molecular beam generation was evaluated on the basis of the signal intensity of the resonantly enhanced multiphoton ionization time-of-flight mass (REMPI-TOFMS) spectra for a Rhodamine B/methanol solution and the amount of sample consumed. The introduction of the pneumatic nebulizer increased the efficiency by a factor of 20

  5. In situ, real-time thickness measurement techniques for bath-deposited CdS thin films on Cu(In,Ga)Se2

    International Nuclear Information System (INIS)

    Mann, Jonathan R.; Noufi, Rommel

    2012-01-01

    A technique has been developed that can measure the thickness of a 30–70 nm thin film of cadmium sulfide on a Cu(In,Ga)Se 2 substrate, in real time, as it grows in a chemical bath. The technique does not damage the film, and can be used to monitor batch depositions and roll-to-roll depositions with equal accuracy. The technique is based on reflectance spectroscopy through the chemical bath. - Highlights: ► Reflection spectra were collected during the chemical bath deposition of CdS. ► Two algorithms were generated to extract film thickness from each spectrum. ► Two conventional techniques were used to independently verify CdS film thicknesses. ► The accuracies of the algorithms are within 7% of the actual thicknesses. ► The algorithms offer in situ, real time thicknesses through the chemical bath.

  6. Annealing effects on the structural and optical properties of vanadium oxide film obtained by the hot-filament metal oxide deposition technique (HFMOD)

    Energy Technology Data Exchange (ETDEWEB)

    Scarminio, Jair; Silva, Paulo Rogerio Catarini da, E-mail: scarmini@uel.br, E-mail: prcsilva@uel.br [Universidade Estadual de Londrina (UEL), PR (Brazil). Departamento de Fisica; Gelamo, Rogerio Valentim, E-mail: rogelamo@gmail.com [Universidade Federal do Triangulo Mineiro (UFTM), Uberaba, MG (Brazil); Moraes, Mario Antonio Bica de, E-mail: bmoraes@mailhost.ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), SP (Brazil)

    2017-01-15

    Vanadium oxide films amorphous, nonstoichiometric and highly absorbing in the optical region were deposited on ITO-coated glass and on silicon substrates, by the hot-filament metal oxide deposition technique (HFMOD) and oxidized by ex-situ annealing in a furnace at 200, 300, 400 and 500 deg C, under an atmosphere of argon and rarefied oxygen. X-ray diffraction, Raman and Rutherford backscattering spectroscopy as well as optical transmission were employed to characterize the amorphous and annealed films. When annealed at 200 and 300 deg C the as-deposited opaque films become transparent but still amorphous. Under treatments at 400 and 500 deg C a crystalline nonstoichiometric V{sub 2}O{sub 5} structure is formed. All the annealed films became semiconducting, with their optical absorption coefficients changing with the annealing temperature. An optical gap of 2.25 eV was measured for the films annealed at 400 and 500 deg C. The annealing in rarefied oxygen atmosphere proved to be a useful and simple ex-situ method to modulate the structural and optical properties of vanadium oxide films deposited by HFMOD technique. This technique could be applied to other amorphous and non-absorbing oxide films, replacing the conventional and sometimes expensive method of modulate desirable film properties by controlling the film deposition parameters. Even more, the HFMOD technique can be an inexpensive alternative to deposit metal oxide films. (author)

  7. Raman Spectroscopy of Solid Oxide Fuel Cells: Technique Overview and Application to Carbon Deposition Analysis

    KAUST Repository

    Maher, R. C.

    2013-07-30

    Raman spectroscopy is a powerful characterization tool for improving the understanding of solid oxide fuel cells (SOFCs), capable of providing direct, molecularly specific information regarding the physical and chemical processes occurring within functional SOFCs in real time. In this paper we give a summary of the technique itself and highlight ex situ and in situ studies that are particularly relevant for SOFCs. This is followed by a case study of carbon formation on SOFC Ni-based anodes exposed to carbon monoxide (CO) using both ex situ and in situ Raman spectroscopy combined with computational simulations. In situ measurements clearly show that carbon formation is significantly reduced for polarized SOFCs compared to those held at open circuit potential (OCP). Ex situ Raman mapping of the surfaces showed clear variations in the rate of carbon formation across the surface of polarized anodes. Computational simulations describing the geometry of the cell showed that this is due to variations in gas access. These results demonstrate the ability of Raman spectroscopy in combination with traditional characterization tools, to provide detailed understanding of critical processes occurring within functional SOFCs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Mapping sediment deposite on tank FB-901 using neutron back scattering technique

    International Nuclear Information System (INIS)

    Wibisono; Sugiharto; Zulkifli Lubis; Phyu Phyu Aung Myint; Thin Moe Hlaing

    2016-01-01

    Tank FB-901 is storage tank for temporary material production with a diameter 11 m and a high 12 m. This tank has been use about 10 years so it is suspected there is sediment in it. Neutron back scattering technique has been used to detected the level of sediment inside so it can be seen the volume of liquid properly and avoid problem in the nozzle outlet. AmBe neutron source with activity one Curie shoot into the tank to enable back scattering intensity from material. Measurement using He-3 detector, radiation counter Ludlum model 2200 scaler ratemeter and mechanical motor controlled by computer. Investigation were taken at around the tank from the bottom to the top on each step 50 mm height 8000 mm. Scan determined the distance between 500 mm and measurement time 3 seconds to each sample point. Investigation found the sediment level average 1000 mm by 1500 mm highest and lowest level 100 mm. Fluctuating liquid level observed maximum of 7800 mm and average of 7000 mm. Cleaning tank advised to avoid blockage of the nozzle and material volume is measured accurately. (author)

  9. Raman Spectroscopy of Solid Oxide Fuel Cells: Technique Overview and Application to Carbon Deposition Analysis

    KAUST Repository

    Maher, R. C.; Duboviks, V.; Offer, G. J.; Kishimoto, M.; Brandon, N. P.; Cohen, L. F.

    2013-01-01

    Raman spectroscopy is a powerful characterization tool for improving the understanding of solid oxide fuel cells (SOFCs), capable of providing direct, molecularly specific information regarding the physical and chemical processes occurring within functional SOFCs in real time. In this paper we give a summary of the technique itself and highlight ex situ and in situ studies that are particularly relevant for SOFCs. This is followed by a case study of carbon formation on SOFC Ni-based anodes exposed to carbon monoxide (CO) using both ex situ and in situ Raman spectroscopy combined with computational simulations. In situ measurements clearly show that carbon formation is significantly reduced for polarized SOFCs compared to those held at open circuit potential (OCP). Ex situ Raman mapping of the surfaces showed clear variations in the rate of carbon formation across the surface of polarized anodes. Computational simulations describing the geometry of the cell showed that this is due to variations in gas access. These results demonstrate the ability of Raman spectroscopy in combination with traditional characterization tools, to provide detailed understanding of critical processes occurring within functional SOFCs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Thermoluminescence properties of undoped diamond films deposited using HF CVD technique

    Directory of Open Access Journals (Sweden)

    Paprocki K.

    2018-03-01

    Full Text Available Natural diamond has been considered as a perspective material for clinical radiation dosimetry due to its tissuebiocompatibility and chemical inertness. However, the use of natural diamond in radiation dosimetry has been halted by the high market price. The recent progress in the development of CVD techniques for diamond synthesis, offering the capability of growing high quality diamond layers, has renewed the interest in using this material in radiation dosimeters having small geometricalsizes. Polycrystalline CVD diamond films have been proposed as detectors and dosimeters of β and α radiation with prospective applications in high-energy photon dosimetry. In this work, we present a study on the TL properties of undoped diamond film samples grown by the hot filament CVD (HF CVD method and exposed to β and α radiation. The glow curves for both types of radiation show similar character and can be decomposed into three components. The dominant TL peaks are centered at around 610 K and exhibit activation energy of the order of 0.90 eV.

  11. Geophysical techniques for exploration of concealed uranium deposits in the Gwalior basin

    International Nuclear Information System (INIS)

    Choudhary, Kalpan; Singh, R.B.

    2004-01-01

    There is no direct geophysical method for the exploration of concealed uranium ore. Scope of geophysics for this in the Gwalior basin comprises delineating the basement topography, demarcation or zones of intense fracturing intersecting the unconformities and to identify the presence of carbonaceous rocks, specially in the graben-like structures. These geophysical problems have been successfully solved in other places by employing IP, resistivity, SP and gravity techniques for basement mapping, identification of fracture zone/shear zone, delineation of electrical conductors like carbonaceous rocks and sulphides. Three such case histories are presented here that include: a). basement and shear/fracture zone mapping in the Vindhyan basin north of Son-Narmada lineament, b). delineation of conductive zone (proved to be carbon phyllite) in the Mahakoshal Group of Kanhara area of Sonbhadra district, UP and c). Identification of a conductive zone, proved to be sulphide body, within the Mahakoshal group in the Gurharpahar area of Sidhi and Sonbhadra districts of MP and UP respectively. In the context of exploration for concealed uranium in the Gwalior basin, it is suggested to employ IP, resistivity, SP, gravity and magnetic methods for delineation of conductive zones like carbonaceous rocks, basement topography, including the graben like structures, fracture zone, geological boundaries and demarcation of the basin boundary. (author)

  12. Experimental setup for producing tungsten coated graphite tiles using plasma enhanced chemical vapor deposition technique for fusion plasma applications

    International Nuclear Information System (INIS)

    Chauhan, Sachin Singh; Sharma, Uttam; Choudhary, K.K.; Sanyasi, A.K.; Ghosh, J.; Sharma, Jayshree

    2013-01-01

    Plasma wall interaction (PWI) in fusion grade machines puts stringent demands on the choice of materials in terms of high heat load handling capabilities and low sputtering yields. Choice of suitable material still remains a challenge and open topic of research for the PWI community. Carbon fibre composites (CFC), Beryllium (Be), and Tungsten (W) are now being considered as first runners for the first wall components of future fusion machines. Tungsten is considered to be one of the suitable materials for the job because of its superior properties than carbon like low physical sputtering yield and high sputter energy threshold, high melting point, fairly high re-crystallization temperature, low fuel retention capabilities, low chemical sputtering with hydrogen and its isotopes and most importantly the reparability with various plasma techniques both ex-situ and in-situ. Plasma assisted chemical vapour deposition is considered among various techniques as the most preferable technique for fabricating tungsten coated graphite tiles to be used as tokamak first wall and target components. These coated tiles are more favourable compared to pure tungsten due to their light weight and easier machining. A system has been designed, fabricated and installed at SVITS, Indore for producing tungsten coated graphite tiles using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) technique for Fusion plasma applications. The system contains a vacuum chamber, a turbo-molecular pump, two electrodes, vacuum gauges, mass analyzer, mass flow controllers and a RF power supply for producing the plasma using hydrogen gas. The graphite tiles will be put on one of the electrodes and WF6 gas will be inserted in a controlled manner in the hydrogen plasma to achieve the tungsten-coating with WF6 dissociation. The system is integrated at SVITS, Indore and a vacuum of the order of 3*10 -6 is achieved and glow discharge plasma has been created to test all the sub-systems. The system design with

  13. pplication of Fractal Technique for Analysis of Geophysical - Geochemical Databases in Tekieh Pb-Zn Ore Deposit (SE of Arak

    Directory of Open Access Journals (Sweden)

    Seyed Reza Mehrnia

    2017-02-01

    Full Text Available Introduction Tekieh Lead-Zinc ore deposit that is located in the Sanandaj-Sirjan structural zone has been recognized as one of the most important mineralized regions in Malayer-Isfahan metallogenic sub-state, south east of Arak (Momenzadeh and Ziseman, 1981. Carbonate host units have been developed along (or across the Vishan-Tekieh anticline as the main structure extended in NW-SE trends (Annells et al, 1985. According to geochemical investigations (Salehi, 2004, the element content of the mineralized regions has originated from Alpine post-volcanisms and subsequently it has migrated toward early Cretaceous formations (dolomitic limestones among several hypogenic stages (Torkashvand et a.2009. Also echelon type structures consisting of folded systems and inversed faulting of structures are the most common features in western and eastern parts of ore deposit regions (Annells et al, 1985. Syngenetic enrichments beside limited (rarely developed epigenetic mineralization have been known as two main phases which are closely relevant to ore forming processes in the massive lenses and vein type occurrences, respectively (Momenzadeh and Ziseman, 1981. Material and Methods In this research, two statistical techniques that consist of classical and fractal equations (Mandelbrot, 2005 were applied in geochemical (Torkashvand et al., 2009 and geophysical (Jafari, 2007 databases for obtaining the linear and nonlinear distributions of geochemical elements (Tekieh Pb-Zn content in association with resistivity variations and induction polarization measurements (Calagari, 2010. According to linear statistical techniques (Torkashvand et al., 2009, the main central parameters such as mean, median and mode in addition to variances and standard deviations as distribution tendencies could be used for obtaining the regression coefficients of the databases. However, in fractal statistics, a reliable regression between geoelectrical - geochemical anomalies should be

  14. Trends of atmospheric deposition of trace elements in Macedonia studied by the moss biomonitoring technique.

    Science.gov (United States)

    Barandovski, Lambe; Frontasyeva, Marina V; Stafilov, Trajče; Sajn, Robert; Pavlov, Sergey; Enimiteva, Vangelica

    2012-01-01

    In 2002 and 2005 the moss biomonitoring technique was applied to air pollution studies in the Republic of Macedonia in the framework of the International Cooperative Programme on Effects of Air Pollution on Natural Vegetation and Crops under the auspices of the United Nations Economic Commission for Europe (UNECE-ICP Vegetation) Convention on Long-Range Transboundary Air Pollution (LRTAP). In August 2005 samples of the terrestrial mosses Homolothecium lutescens and Hypnum cupressiforme were collected at 72 sites evenly distributed over the territory of the country, in accordance with the sampling strategy of the European moss survey programme. A total of 41 elements (Na, Mg, Al, Cl, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Se, Br, Rb, Sr, Zr, Mo, Cd, Sb, I, Cs, Ba, La, Ce, Sm, Eu, Tb, Dy Hf, Ta, W, Hg, Pb, Th, and U) were determined by instrumental epithermal neutron activation analysis and atomic absorption spectrometry. Principal component analysis was used to identify and characterize different pollution sources. Distributional maps were prepared to point out the regions most affected by pollution and to relate this to known sources of contamination. A few areas, as in 2002, are experiencing particular environmental stress: Veles, Skopje, Tetovo, Radoviš and Kavadarci-Negotino, whereas the agricultural regions in the south, south-west, and south-east show median European values for most elements of mainly pollution origin. A significant increase in the content of Ni is noticed in the 2005 moss survey compared with 2002, due to the increased production of the ferro-nickel smelter in Kavadarci. A higher content of Cd, Hg, and Pb in 2005 relative to 2002 can be explained by pollution from the lead-zinc smelter in Veles, as well as the pollution that comes from the open slag waste dump of this smelter. Protection activities on the dump of slag from the former ferrochromium smelter located near Tetovo resulted in a lower content of Cr in the 2005 moss

  15. Photoluminescence of nc-Si:Er thin films obtained by physical and chemical vapour deposition techniques: The effects of microstructure and chemical composition

    Energy Technology Data Exchange (ETDEWEB)

    Cerqueira, M.F., E-mail: fcerqueira@fisica.uminho.p [Departamento de Fisica, Universidade do Minho, Campus de Gualtar 4710-057 Braga (Portugal); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, Via Orabona n.4-70126 Bari (Italy); Stepikhova, M. [Institute for Physics of Microstructures RAS, 603600 Nizhnij Novgorod GSP-105 (Russian Federation); Alpuim, P.; Andres, G. [Departamento de Fisica, Universidade do Minho, Campus de Gualtar 4710-057 Braga (Portugal); Kozanecki, A. [Polish Academy of Sciences, Institute of Physics, PL-02668, Warsaw (Poland); Soares, M.J.; Peres, M. [Departamento de Fisica, Universidade de Aveiro, Campus de Santiago, 3700 Aveiro (Portugal)

    2009-08-31

    Erbium doped nanocrystalline silicon (nc-Si:Er) thin films were produced by reactive magnetron rf sputtering and by Er ion implantation into chemical vapor deposited Si films. The structure and chemical composition of films obtained by the two approaches were studied by micro-Raman scattering, spectroscopic ellipsometry and Rutherford backscattering techniques. Variation of deposition parameters was used to deposit films with different crystalline fraction and crystallite size. Photoluminescence measurements revealed a correlation between film microstructure and the Er{sup 3+} photoluminescence efficiency.

  16. Study of Sb/SnO{sub 2} bi-layer films prepared by ion beam sputtering deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chun-Min [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Chun-Chieh [Department of Electrical Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung 833, Taiwan, ROC (China); Kuo, Jui-Chao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Jow-Lay, E-mail: jlh888@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

    2014-11-03

    In the present work, bi-layer thin films of Sb/SnO{sub 2} were produced on unheated glass substrates using ion beam sputtering (IBS) technique without post annealing treatment. The thickness of Sb layers was varied from 2 to 10 nm and the Sb layers were deposited on SnO{sub 2} layers having thicknesses of 40 nm to 115 nm. The effect of thickness was studied on the morphological, electrical and optical properties. The Sb/SnO{sub 2} bi-layer resulted in lowering the electrical resistivity as well as reducing the optical transmittance. However, the optical and electrical properties of the bi-layer films were mainly influenced by the thickness of Sb layers due to progressive transfer in structures from aggregate to continuous films. The bi-layer films show the electrical resistivity of 1.4 × 10{sup −3} Ω cm and an optical transmittance of 26% for Sb film having 10 nm thickness. - Highlights: • Bi-layer Sb/SnO{sub 2} structures were synthesized by ion beam sputtering (IBS) technique. • The 6 nm-thick Sb film is a transition region in this study. • The conductivity of the bi-layer films is increased as Sb thickness increases. • The transmittance of the bi-layer films is decreased as Sb thickness increases.

  17. Characterization of Ultra thin chromium layers deposited ou to SiO2 using the Le-PIXE and the RB S techniques

    International Nuclear Information System (INIS)

    Zahraman, K.; Nsouli, B.; Roumie, M.

    2007-01-01

    In this paper, we demonstrate the ability of the Le-PIXE (Low Energy PIXE) technique, using proton energies < 1 MeV, for the monitoring of the thickness and the thickness uniformity of ultra thin (0.5 nm < t < 20 nm) chromium layers deposited onto quartz substrates. Chromium is a good candidate for obtaining conductive ultra thin layers on insulator substrates such as quartz (SiO2). The resistivity of such layers is highly related to the quality of the deposited chromium film. In order to optimize the deposition process, there is a need for rapid and accurate monitoring of such films (film thickness, thickness uniformity over a big surface...). The acquisition time needed to obtain results with less than 3-4 % precision was 5 minutes for the thinnest layers. The validation for the use of the Le-PIXE technique was checked by means of conventional RB S technique.

  18. Prototyping of radially oriented piezoelectric ceramic-polymer tube composites using fused deposition and lost mold processing techniques

    Science.gov (United States)

    McNulty, Thomas Francis

    Piezoelectric tube composite hydrophones of 3-1, 3-2, and 2-2 connectivity were developed using Fused Deposition (FD) and lost mold processing (LMP). In this work, a new series of thermoplastic binder formulations, named the ECG series, were developed for the FD process. The ECG-9 formulation exhibits mechanical, thermal, and rheological properties suitable for the Fused Deposition of functional lead zirconate titanate ceramic devices. This binder consists of 100 parts (by weight) Vestoplast 408, 20 parts Escorez 2520, 15 parts Vestowax A-227, and 5 parts Indopol H-1500. Oleic acid, oleyl alcohol, stearic acid, and stearyl alcohol (in toluene) were tested for use as a dispersant in the PZT/ECG-9 system. It was found that stearic acid adsorbs the most onto PZT powder, adsorbing 8.1 mg/m2. Using stearic acid, solutions of increasing concentration (5.0--50.0 g/l) were measured for adsorption. It was found that 30.0 g/l is the minimum concentration necessary for optimum surface coverage. The surfactant-coated powder was compounded with ECG-9 binder to create a 54 vol.% mix. The mix was extruded using a single screw extrusion apparatus into continuous lengths (>30 m) of 1.78 mm diameter filament. Fused Deposition was used to create composite designs of 3-1, 3-2, and 2-2 connectivity. After sintering, samples exhibit a sintered density greater than 97%. Sanders Prototyping (SPI) was used to manufacture molds for use with LMP techniques. Molds of 3-1, 3-2, and 2-2 connectivity were developed. The molds were infiltrated with a 55 vol.% aqueous based PZT slurry. The parts were subjected to a binder decomposition cycle, followed by sintering. Resultant samples were highly variable due to random macro-pores present in the samples after sintering. The resultant preforms were embedded in epoxy, and polished to dimensions of 8.0 mm inside diameter (ID), 14.0 mm outside diameter (OD), and 10.0 mm length (l) the OD and l dimensions are accurate to +/--2%, while the ID is accurate

  19. Electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pagni, O. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Somhlahlo, N.N. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Weichsel, C. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)]. E-mail: andrew.leitch@nmmu.ac.za

    2006-04-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies.

  20. Electrical properties of ZnO thin films grown by MOCVD

    International Nuclear Information System (INIS)

    Pagni, O.; Somhlahlo, N.N.; Weichsel, C.; Leitch, A.W.R.

    2006-01-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies

  1. Effect of Ag doping on the structural, electrical and optical properties of ZnO grown by MOCVD at different substrate temperatures

    Science.gov (United States)

    Ievtushenko, A.; Karpyna, V.; Eriksson, J.; Tsiaoussis, I.; Shtepliuk, I.; Lashkarev, G.; Yakimova, R.; Khranovskyy, V.

    2018-05-01

    ZnO films and nanostructures were deposited on Si substrates by MOCVD using single source solid state zinc acetylacetonate (Zn(AA)) precursor. Doping by silver was realized in-situ via adding 1 and 10 wt. % of Ag acetylacetonate (Ag(AA)) to zinc precursor. Influence of Ag on the microstructure, electrical and optical properties of ZnO at temperature range 220-550 °C was studied by scanning, transmission electron and Kelvin probe force microscopy, photoluminescence and four-point probe electrical measurements. Ag doping affects the ZnO microstructure via changing the nucleation mode into heterogeneous and thus transforming the polycrystalline films into a matrix of highly c-axis textured hexagonally faceted nanorods. Increase of the work function value from 4.45 to 4.75 eV was observed with Ag content increase, which is attributed to Ag behaviour as a donor impurity. It was observed, that near-band edge emission of ZnO NS was enhanced with Ag doping as a result of quenching deep-level emission. Upon high doping of ZnO by Ag it tends to promote the formation of basal plane stacking faults defect, as it was observed by HR TEM and PL study in the case of 10 wt.% of Ag. Based on the results obtained, it is suggested that NS deposition at lower temperatures (220-300 °C) is more favorable for p-type doping of ZnO.

  2. Improving optical properties of silicon nitride films to be applied in the middle infrared optics by a combined high-power impulse/unbalanced magnetron sputtering deposition technique.

    Science.gov (United States)

    Liao, Bo-Huei; Hsiao, Chien-Nan

    2014-02-01

    Silicon nitride films are prepared by a combined high-power impulse/unbalanced magnetron sputtering (HIPIMS/UBMS) deposition technique. Different unbalance coefficients and pulse on/off ratios are applied to improve the optical properties of the silicon nitride films. The refractive indices of the Si3N4 films vary from 2.17 to 2.02 in the wavelength ranges of 400-700 nm, and all the extinction coefficients are smaller than 1×10(-4). The Fourier transform infrared spectroscopy and x-ray diffractometry measurements reveal the amorphous structure of the Si3N4 films with extremely low hydrogen content and very low absorption between the near IR and middle IR ranges. Compared to other deposition techniques, Si3N4 films deposited by the combined HIPIMS/UBMS deposition technique possess the highest refractive index, the lowest extinction coefficient, and excellent structural properties. Finally a four-layer coating is deposited on both sides of a silicon substrate. The average transmittance from 3200 to 4800 nm is 99.0%, and the highest transmittance is 99.97% around 4200 nm.

  3. Advancements in artificial heart valve disks using nano-sized thin films deposited by CVD and sol-gel techniques

    International Nuclear Information System (INIS)

    Kousar, Y.; Ali, N.; Neto, V.F.; Mei, S.; Gracio, J.

    2003-01-01

    Pyrolytic carbon (PyC) is widely used in manufacturing commercial artificial heart valve disks (HVD). Although, PyC is commonly used in HVD, it is not the best material for this application since its blood compatibility is not ideal for prolonged clinical use. As a result thrombosis often occurs and the patients are required to take anti- coagulation drugs on a regular basis in order to minimise the formation of thrombosis. However, the anti-coagulation therapy gives rise to some detrimental side effects in patients. Therefore, it is extremely urgent that newer and more technically advanced materials with better surface and bulk properties are developed. In this paper, we report the mechanical properties of PyC-HVD, namely, strength, wear resistance and coefficient of friction. The strength of the material was assessed using Brinell indentation tests. Furthermore, wear resistance and the coefficient of friction values were obtained from the pin-on-disk testing. The micro-structural properties of PyC were characterized using XRD, Raman spectroscopy and SEM analysis. Also, in this paper we report the preparation of free standing nanocrystalline diamond films (FSND) using the time-modulated chemical vapor deposition (TMCVD) process. Furthermore, the sol-gel technique was used to uniformly coat PyC-HVD with dense, nanocrystalline-titanium oxide (nc-TiO/sub 2/) coatings. The as-grown nc-TiO/sub 2/ coatings were characterized for microstructure using SEM and XRD analysis. (author)

  4. Structural and surface morphological studies of long chain fatty acid thin films deposited by Langmuir-Blodgett technique

    Energy Technology Data Exchange (ETDEWEB)

    Das, Nayan Mani, E-mail: nayanmanidas3@gmail.com [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India); Roy, Dhrubojyoti [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India); Gupta, Mukul [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India); Gupta, P.S. [Department of Applied Physics, Indian School of Mines, Dhanbad 826004 (India)

    2012-12-15

    In the present work we aim to study the structural and surface morphological characteristics of divalent cation (cadmium ion, Cd{sup 2+}) induced thin mono- to multilayer films of fatty acids such as arachidic acid and stearic acid prepared by the Langmuir-Blodgett (LB) technique. These ultra thin films of various numbers of layers were studied by X-ray diffraction (XRD), X-ray reflectivity (XRR) and Atomic Force Microscopy (AFM). In this specific Y-type deposition, it was found that as the individual layer thickness increases, the corresponding layer by layer interfacial electron density of the thin films decreases. Since the fatty acid chain tries to maintain its minimum value of cross-sectional area, tilting occurs with respect to its nearest neighbor. The tilt angle calculated for 9 layers of cadmium arachidate (CdA{sub 2}) and cadmium stearate (CdSt{sub 2}) are 18 Degree-Sign and 19.5 Degree-Sign , respectively. An asymmetric air gap of thickness {approx}3 A was also seen between the tail parts of 2 molecular chains. The RMS roughness and average height factors calculated through AFM studies show non-uniform surface morphology of both CdA{sub 2} and CdSt{sub 2}, although the calculated topographic variations were found to have more irregularity in case of CdSt{sub 2} than in case of CdA{sub 2}.

  5. Growth of InAs Quantum Dots on Germanium Substrate Using Metal Organic Chemical Vapor Deposition Technique

    Directory of Open Access Journals (Sweden)

    Tyagi Renu

    2009-01-01

    Full Text Available Abstract Self-assembled InAs quantum dots (QDs were grown on germanium substrates by metal organic chemical vapor deposition technique. Effects of growth temperature and InAs coverage on the size, density, and height of quantum dots were investigated. Growth temperature was varied from 400 to 450 °C and InAs coverage was varied between 1.40 and 2.35 monolayers (MLs. The surface morphology and structural characteristics of the quantum dots analyzed by atomic force microscope revealed that the density of the InAs quantum dots first increased and then decreased with the amount of InAs coverage; whereas density decreased with increase in growth temperature. It was observed that the size and height of InAs quantum dots increased with increase in both temperature and InAs coverage. The density of QDs was effectively controlled by growth temperature and InAs coverage on GaAs buffer layer.

  6. Comparative study of layer-by-layer deposition techniques for poly(sodium phosphate) and poly(allylamine hydrochloride).

    Science.gov (United States)

    Elosua, Cesar; Lopez-Torres, Diego; Hernaez, Miguel; Matias, Ignacio R; Arregui, Francisco J

    2013-12-20

    An inorganic short chain polymer, poly(sodium phosphate), PSP, together with poly(allylamine hydrochloride), PAH, is used to fabricate layer-by-layer (LbL) films. The thickness, roughness, contact angle, and optical transmittance of these films are studied depending on three parameters: the precursor solution concentrations (10-3 and 10-4 M), the number of bilayers deposited (20, 40, 60, 80, and 100 bilayers), and the specific technique used for the LbL fabrication (dipping or spraying). In most cases of this experimental study, the roughness of the nanofilms increases with the number of bilayers. This contradicts the basic observations made in standard LbL assemblies where the roughness decreases for thicker coatings. In fact, a wide range of thickness and roughness was achieved by means of adjusting the three parameters mentioned above. For instance, a roughness of 1.23 or 205 nm root mean square was measured for 100 bilayer coatings. Contact angles close to 0 were observed. Moreover, high optical transmittance is also reported, above 90%, for 80 bilayer films fabricated with the 10-4 M solutions. Therefore, these multilayer structures can be used to obtain transparent superhydrophilic surfaces.

  7. Structural and magnetic properties of nickel nanowires grown in porous anodic aluminium oxide template by electrochemical deposition technique

    Science.gov (United States)

    Nugraha Pratama, Sendi; Kurniawan, Yudhi; Muhammady, Shibghatullah; Takase, Kouichi; Darma, Yudi

    2018-03-01

    We study the formation of nickel nanowires (Ni NWs) grown in porous anodic aluminium oxide (AAO) template by the electrochemical deposition technique. Here, the initial AAO template was grown by anodization of aluminium substrate in sulphuric acid solution. The cross-section, crystal structure, and magnetic properties of Ni NWs system were characterized by field-emission SEM, XRD, and SQUID. As a result, the highly-ordered Ni NWs are observed with the uniform diameter of 27 nm and the length from 31 to 163 nm. Based on XRD spectra analysis, Ni NWs have the face-centered cubic structure with the lattice parameter of 0.35 nm and average crystallite size of 17.19 nm. From SQUID measurement at room temperature, by maintaining the magnetic field perpendicular to Ni NWs axis, the magnetic hysteresis of Ni NWs system show the strong ferromagnetism with the coercivity and remanence ratio of ∼148 Oe and ∼0.23, respectively. The magnetic properties are also calculated by means of generalized gradient approximation methods. From the calculation result, we show that the ferromagnetism behavior comes from Ni NWs without any contribution from AAO template or the substrate. This study opens the potential application of Ni NWs system for novel functional magnetic devices.

  8. Preparation of SrIrO{sub 3} thin films by using metal-organic aerosol deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Esser, Sebastian; Schneider, Melanie; Moshnyaga, Vasily; Gegenwart, Philipp [1. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

    2013-07-01

    The interplay between spin-orbit coupling and electronic correlations could lead to interesting novel states in iridium oxide materials. We focus on the perovskite phase of SrIrO{sub 3} because Moon et al. [1] showed by using optical spectroscopy and first-principles calculations that the last member of the Ruddlesden-Popper series Sr{sub n+1}Ir{sub n}O{sub 3n+1} (n = ∞) is close to the Mott transition. By using metal-organic aerosol deposition technique we have grown SrIrO{sub 3} thin films on (111)-oriented SrTiO{sub 3} substrates. The cubic symmetry of the SrTiO{sub 3} substrate ensured that the SrIrO{sub 3} thin film grew in the monoclinic perovskite phase. The X-ray diffraction results suggest that SrIrO{sub 3} thin films in perovskite structure were obtained and these show out of plane epitaxy with monoclinic (002){sub m}-orientation. The temperature dependence of the electrical resistivity of these SrIrO{sub 3} thin films were investigated and metallic behavior was observed down to 50 K.

  9. A Comparative Study of Three Different Chemical Vapor Deposition Techniques of Carbon Nanotube Growth on Diamond Films

    Directory of Open Access Journals (Sweden)

    Betty T. Quinton

    2013-01-01

    Full Text Available This paper compares between the methods of growing carbon nanotubes (CNTs on diamond substrates and evaluates the quality of the CNTs and the interfacial strength. One potential application for these materials is a heat sink/spreader for high-power electronic devices. The CNTs and diamond substrates have a significantly higher specific thermal conductivity than traditional heat sink/spreader materials making them good replacement candidates. Only limited research has been performed on these CNT/diamond structures and their suitability of different growth methods. This study investigates three potential chemical vapor deposition (CVD techniques for growing CNTs on diamond: thermal CVD (T-CVD, microwave plasma-enhanced CVD (MPE-CVD, and floating catalyst thermal CVD (FCT-CVD. Scanning electron microscopy (SEM and high-resolution transmission electron microscopy (TEM were used to analyze the morphology and topology of the CNTs. Raman spectroscopy was used to assess the quality of the CNTs by determining the ID/IG peak intensity ratios. Additionally, the CNT/diamond samples were sonicated for qualitative comparisons of the durability of the CNT forests. T-CVD provided the largest diameter tubes, with catalysts residing mainly at the CNT/diamond interface. The MPE-CVD process yielded non uniform defective CNTs, and FCT-CVD resulted in the smallest diameter CNTs with catalyst particles imbedded throughout the length of the nanotubes.

  10. Biomonitoring of heavy metal deposition in the south Ural region: some preliminary results obtained by nuclear and related techniques

    International Nuclear Information System (INIS)

    Frontas'eva, M.V.; Steinnes, E.; Lyapunov, S.M.; Cherchintsev, V.D.; Smirnov, L.I.

    1999-01-01

    The first results are reported from the analysis of feather mosses used to study heavy metal atmospheric deposition in the vicinity of Magnitogorsk, the center of the steel industry in Russia. Moss samples collected at sites 30 km to the north-west of the industry were analyzed by instrumental neutron activation analysis using epithermal neutrons (ENAA), Results for a total of 38 elements are reported, including Pb, Cd, and Cu determined by atomic absorption spectroscopy (AAS). The element concentrations in moss samples from this work are compared with relevant literature data for strongly polluted areas in Central and Northern Europe and background values from Norway obtained by the same biomonitoring technique. The concentrations of Sb in the examined area are the highest ever reported for mosses, and also levels of Fe, Cr, and V are found to be particularly high. A scanning electron microscope connected to an XRF analyzer (SEM-XRF) was used to examine the surface of the moss samples. Photographs of identified iron spherules along with other aerosol particles made at magnification of 3500 to 5000 times and corresponding XRF analyses verifying the nature of typical particles are presented

  11. A comparative study of the electrical properties of Pd/ZnO Schottky contacts fabricated using electron beam deposition and resistive/thermal evaporation techniques

    International Nuclear Information System (INIS)

    Mtangi, W.; Auret, F. D.; Janse van Rensburg, P. J.; Coelho, S. M. M.; Legodi, M. J.; Nel, J. M.; Meyer, W. E.; Chawanda, A.

    2011-01-01

    A systematic investigation to check the quality of Pd Schottky contacts deposited on ZnO has been performed on electron beam (e-beam) deposited and resistively/thermally evaporated samples using current-voltage, IV, and conventional deep level transient spectroscopy (DLTS) measurements. Room temperature IV measurements reveal the dominance of pure thermionic emission on the resistively evaporated contacts, while the e-beam deposited contacts show the dominance of generation recombination at low voltages, -10 A at a reverse voltage of 1.0 V whereas the e-beam deposited contacts have reverse currents of the order of 10 -6 A at 1.0 V. Average ideality factors have been determined as (1.43 ± 0.01) and (1.66 ± 0.02) for the resistively evaporated contacts and e-beam deposited contacts, respectively. The IV barrier heights have been calculated as (0.721 ± 0.002) eV and (0.624 ± 0.005) eV for the resistively evaporated and e-beam deposited contacts, respectively. Conventional DLTS measurements reveal the presence of three prominent defects in both the resistive and e-beam contacts. Two extra peaks with energy levels of 0.60 and 0.81 eV below the conduction band minimum have been observed in the e-beam deposited contacts. These have been explained as contributing to the generation recombination current that dominates at low voltages and high leakage currents. Based on the reverse current at 1.0 V, the degree of rectification, the dominant current transport mechanism and the observed defects, we conclude that the resistive evaporation technique yields better quality Schottky contacts for use in solar cells and ultraviolet detectors compared to the e-beam deposition technique. The 0.60 eV has been identified as possibly related to the unoccupied level for the doubly charged oxygen vacancy, V o 2+ .

  12. Theoretical and experimental study of a calorimetric technique for measuring energy deposition in materials caused by complex pile irradiation

    International Nuclear Information System (INIS)

    Mas, P.; Sciers, P.; Droulers, Y.

    1962-01-01

    Calorimetric methods may be used to measure gamma fluxes greater than 10 6 r/h near the cores of swimming pool reactors. The theory, design, and properties of isothermal calorimeters are discussed, and experimental results obtained with two types are presented. Measurement of energy deposition in materials and the long term integration of energy depositions are other uses of these devices. Results of measurements on heat deposition in steel and water are given. Fluxes were also measured. (authors) [fr

  13. Development and application of a green-chemistry solution deposition technique for buffer layer coating on cube-textured metal substrates in view of further deposition of rare-earth based superconductors

    DEFF Research Database (Denmark)

    Pallewatta, Pallewatta G A P

    which consist of YBCO superconducting coatings on cube-textured Ni based alloy tapes.  Before the epitaxial deposition this superconducting layer, a buffer layer is applied on the metal substrate as a diffusion barrier which is also required to transfer the strong texture of the underlying substrate......, allowing the epitaxial growth of the superconducting layer. State-of-the-art coated conductor hetero structures are mainly based on CeO2 based buffer stacks that consist of a sequence of several different buffer layers. Buffer layers deposited by continuous chemical deposition techniques, which...... is expected to be very advantageous in reel-to-reel applications. The thickness of these SrTiO3 monolayers was large enough to stop the nickel and copper diffusion from the Cu/Ni substrate. Hence, the developed high quality buffer layers are expected to be acting as efficient diffusion barriers and also...

  14. Study of electrical properties of single GaN nanowires grown by MOCVD with a Ti mask

    International Nuclear Information System (INIS)

    Vasiliev, A A; Mozharov, A M; Mukhin, I S; Rozhavskaya, M M; Lundin, V V

    2016-01-01

    We researched electrical characteristics of GaN nanowires (NWs) grown by MOCVD through solid titanium film. The technology of creating the ohmic contacts and MESFET structure on single NWs has been developed. The optimal annealing temperature of contacts has been found and conductivity structure, the free carrier concentration and mobility has been evaluated. (paper)

  15. Development of a dual-tracer real-time particle dry-deposition measurement technique for simple and complex terrain

    International Nuclear Information System (INIS)

    Sehmel, G.A.; Hodgson, W.H.; Campbell, J.A.

    1979-01-01

    Detectors are being developed and tested for measuring the airborne concentrations of lithium particles and SF 6 gas in real time. The airborne lithium detector will be used for real-time measurements of both particle dry-deposition velocities and resuspension rates. Both the lithium and SF 6 detectors will be used for measuring dry deposition in field experiments

  16. Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

    Science.gov (United States)

    Al Balushi, Zakaria Y.

    Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

  17. Performance of Erbium-doped TiO2 thin film grown by physical vapor deposition technique

    Science.gov (United States)

    Lahiri, Rini; Ghosh, Anupam; Dwivedi, Shyam Murli Manohar Dhar; Chakrabartty, Shubhro; Chinnamuthu, P.; Mondal, Aniruddha

    2017-09-01

    Undoped and Erbium-doped TiO2 thin films (Er:TiO2 TFs) were fabricated on the n-type Si substrate using physical vapour deposition technique. Field emission scanning electron microscope showed the morphological change in the structure of Er:TiO2 TF as compared to undoped sample. Energy dispersive X-ray spectroscopy (EDX) confirmed the Er doping in the TiO2 thin film (TF). The XRD and Raman spectrum showed the presence of anatase phase TiO2 and Er2O3 in the Er:TiO2 TF. The Raman scattering depicted additional number of vibrational modes for Er:TiO2 TF due to the presence of Er as compared to the undoped TiO2 TF. The UV-Vis absorption measurement showed that Er:TiO2 TF had approximately 1.2 times more absorption over the undoped TiO2 TF in the range of 300-400 nm. The main band transition, i.e., the transition between the oxygen (2p) state and the Ti (3d) state was obtained at 3.0 eV for undoped TiO2 and at 3.2 eV for Er:TiO2 TF, respectively. The photo responsivity measurement was done on both the detectors, where Er:TiO2 TF detector showed better detectivity ( D *), noise equivalent power and temporal response as compared to undoped detector under ultra-violet illumination.

  18. Conformal, planarizing and bridging AZ5214-E layers deposited by a 'draping' technique on non-planar III V substrates

    Science.gov (United States)

    Eliás, P.; Strichovanec, P.; Kostic, I.; Novák, J.

    2006-12-01

    A draping technique was tested for the deposition of positive-tone AZ5214-E photo-resist layers on non-planar (1 0 0)-oriented III-V substrates, which had a variety of three-dimensional (3D) topographies micromachined in them that consisted, e.g., of mesa ridges confined to side facets with variable tilt, inverted pyramidal holes and stubs confined to perpendicular side facets. All objects were sharp-edged. In each draping experiment, an AZ5214-E sheet was (1) formed floating on the water surface, (2) lowered onto a non-planar substrate and (3) draped over it during drying to form either self-sustained, or conformal, or planarizing layers over the non-planar substrates. The draping process is based on the depression of the glass transition temperature Tg of AZ5214-E material induced by penetrant water molecules that interact with AZ5214-E. During the process, the molecules are initially trapped under an AZ5214-E sheet and then transported out through the sheet via permeation. The water-AZ5214-E interaction modifies the stiffness κ of the sheet. The magnitude of the effect depends on temperature T and on partial water vapour pressure difference p(T, P, κ): the net effect is that Tg = f(C(T, P), p(T, P, κ)) is lowered as the concentration C of water increases with T and p, where P is the permeability of the sheet. The interaction depressed the Tg of the sheets as low as or lower than 53 °C for 6 µm thick sheets. At room temperature T Tg, the sheet becomes rubbery and mouldable by adhesion and capillary forces. As a result, it can either contour or planarize the topography depending on its geometry and thickness of the sheet.

  19. Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique

    International Nuclear Information System (INIS)

    Zhang Tiemin; Miao Guoqing; Jin Yixin; Yu Shuzhen; Jiang Hong; Li Zhiming; Song Hang

    2009-01-01

    In 0.8 Ga 0.2 As was grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) on InP(1 0 0) substrate with two-step growth technique. Effect of buffer thickness on crystalline quality, surface morphology, electrical property and stress of In 0.8 Ga 0.2 As epilayer was analyzed, and properties of the In 0.8 Ga 0.2 As epilayer were characterized by X-ray diffraction, scanning electron microscopy, Hall measurements and Raman scattering. The experiments showed that the properties of the In 0.8 Ga 0.2 As epilayer had close relation to the buffer thickness and the optimum buffer thickness was about 100 nm

  20. Effects of pH and temperature on the deposition properties of stannate chemical conversion coatings formed by the potentiostatic technique on AZ91 D magnesium alloy

    International Nuclear Information System (INIS)

    Elsentriecy, Hassan H.; Azumi, Kazuhisa; Konno, Hidetaka

    2008-01-01

    The effects of pH and temperature of a stannate bath on the quality of stannate chemical conversion coatings formed on AZ91 D magnesium alloy by using the potentiostatic polarization technique at E = -1.1 V were investigated in order to improve uniformity and corrosion protection performance of the coating films. It was found that the uniformity and corrosion resistance of coating films deposited by potentiostatic polarization were closely associated with pH and temperature of the coating bath. The pH and temperature to obtain the best coating film were investigated as a function of corrosion protection performance evaluated by curves of potentiodynamic anodic polarization conducted in borate buffer solution. Scanning electron microscope observation and electrochemical corrosion tests of the stannate-coated samples confirmed significant improvement in uniformity and corrosion resistivity of coating films deposited by the potentiostatic technique by modifying the pH and temperature of the coating bath. It was also found that uniformity and corrosion resistivity of the coating films deposited by the potentiostatic technique were considerably improved compared to those of coatings deposited by the simple immersion method at the best conditions of pH and temperature of the coating bath

  1. MOCVD Process Technology for Affordable, High-Yield, High-Performance MESFET Structures. MIMIC Phase 3

    Science.gov (United States)

    1993-01-26

    development of large-area deposition for producing high efficiency solar cells."I This earlier work suggested that, with the appropriate modifications, the...using a numerical technique described previously.(2ŗ ) The model simultaneously solves the equations of continuity, motion, differential thermal energy ...Undoped IkeA 1.0 mnn BUBSTRATE Beni rNSIif *A FIGURE 2-4. EPrrAXIAL STRUCTURE FOR BUFFER LEAKAGE TESTS. 350 um 350 um Contact Contact G-20 um , CAP

  2. Adhesion Strength of TiN Coatings at Various Ion Etching Deposited on Tool Steels Using Cathodic Arc Pvd Technique

    Science.gov (United States)

    Ali, Mubarak; Hamzah, Esah; Ali, Nouman

    Titanium nitride (TiN) widely used as hard coating material was coated on tool steels, namely on high-speed steel (HSS) and D2 tool steel by physical vapor deposition method. The goal of this study was to examine the effect of ion etching with and without titanium (Ti) and chromium (Cr) on the adhesion strength of TiN coatings deposited on tool steels. From the scratch tester, it was observed that by increasing Ti ion etching showed an increase in adhesion strength of the deposited coatings. The coatings deposited with Cr ion etching showed poor adhesion compared with the coatings deposited with Ti ion etching. Scratch test measurements showed that the coating deposited with titanium ion etching for 16 min is the most stable coating and maintained even at the critical load of 66 N. The curve obtained via penetration depth along the scratch trace is linear in the case of HSS, whereas is slightly flexible in the case of D2 tool steel. The coatings deposited on HSS exhibit better adhesion compared with those on D2 tool steel.

  3. Iron deposition in cranial bone marrow with sickle cell disease: MR assessment using a fat suppression technique

    International Nuclear Information System (INIS)

    Kaneko, K.; Humbert, J.H.; Kogutt, M.S.; Robinson, A.E.

    1993-01-01

    Thirteen patients with sickle cell disease (SCD) undergoing transfusion therapy and 8 control patients were examined by magnetic resonance imaging to discriminate bone marrow change due to iron deposition from hematologic marrow hyperplasia. Using T1-weighted spin echo images, only two subjects showed extremely low signal intensity marrow compatible with iron deposition. However, using T2-weighted fast spin echo images with fat suppression, cranial bone marrow in SCD patients with transfusion therapy showed considerably lower signal than that of controls. The main cause of marrow signal decrease in SCD patients with transfusion therapy was considered to be iron deposition due to repeated transfusion therapy rather than red marrow hyperplasia. (orig.)

  4. Characterization of 2004 Indian Ocean tsunami induced deposits along the Chennai coast using magnetic and geochemical techniques

    Digital Repository Service at National Institute of Oceanography (India)

    Veerasingam, S.; Venkatachalapathy, R.

    , and reflect changes in the detrital component mineralogy which is largely influenced by the tsunami event To identify t he connection between the tsunami deposit and different sedimentologic units present in the study area, textural, geochemical and rock...

  5. Stress-induced leakage current characteristics of PMOS fabricated by a new multi-deposition multi-annealing technique with full gate last process

    International Nuclear Information System (INIS)

    Wang Yanrong; Yang Hong; Xu Hao; Luo Weichun; Qi Luwei; Zhang Shuxiang; Wang Wenwu; Zhu Huilong; Zhao Chao; Chen Dapeng; Ye Tianchun; Yan Jiang

    2017-01-01

    In the process of high- k films fabrication, a novel multi deposition multi annealing (MDMA) technique is introduced to replace simple post deposition annealing. The leakage current decreases with the increase of the post deposition annealing (PDA) times. The equivalent oxide thickness (EOT) decreases when the annealing time(s) change from 1 to 2. Furthermore, the characteristics of SILC (stress-induced leakage current) for an ultra-thin SiO 2 /HfO 2 gate dielectric stack are studied systematically. The increase of the PDA time(s) from 1 to 2 can decrease the defect and defect generation rate in the HK layer. However, increasing the PDA times to 4 and 7 may introduce too much oxygen, therefore the type of oxygen vacancy changes. (paper)

  6. Seismic refraction technique aplications in the geotechnical characterization of the Cachoeira deposit massif, Caetite, State of Bahia, Brazil

    International Nuclear Information System (INIS)

    Malagutti Filho, W.; Oliveira Braga, T. de.

    1984-01-01

    Geophysical surveys throught the Cachoeira Uranium deposit massif were carried out with the purpose of assisting in the geotechnical characterization for the implantation of the Mining-Industrial Complex projects on the Lagoa Real uranium deposits, Caetite municipality, state of Bahia, Brazil. This study discusses the methodology utilized in the geophysical surveys and their results as well as their applications to the geotechnical characterization as a whole. (D.J.M.) [pt

  7. Diamond-like carbon films deposited on three-dimensional shape substrate model by liquid electrochemical technique

    International Nuclear Information System (INIS)

    He, Y.Y.; Zhang, G.F.; Zhao, Y.; Liu, D.D.; Cong, Y.; Buck, V.

    2015-01-01

    Diamond-like carbon (DLC) films were deposited on three-dimensional (3D) shape substrate model by electrolysis of 2-propanol solution at low temperature (60 °C). This 3D shape model was composed of a horizontally aligned stainless steel wafer and vertically aligned stainless steel rods. Morphology and microstructure of the films were analyzed by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy, respectively. The results suggested there were only differences in film uniformity and thickness for two kinds of samples. The hydrogenated amorphous carbon films deposited on horizontally aligned substrate were smooth and homogeneous. And the film thickness of DLC films gained on the vertical substrates decreased along vertical direction. It is believed that bubble formation could enhance nucleation on the wetted capillary area. This experiment shows that deposition of DLC films by liquid phase deposition on 3D shape conductive substrates is possible. - Highlights: • DLC film is expected to be deposited on complex surface/shape substrate. • DLC film is deposited on 3D shape substrate by liquid electrochemical method. • Horizontal substrate is covered by smooth and homogeneous DLC films. • Film thickness decreases along vertical direction due to boiling effect

  8. Diamond-like carbon films deposited on three-dimensional shape substrate model by liquid electrochemical technique

    Energy Technology Data Exchange (ETDEWEB)

    He, Y.Y. [Institute of Nano-photonics, School of Physics and Materials Engineering, Dalian Nationalities University, 116600 Dalian (China); Zhang, G.F. [School of Materials Science and Engineering, Dalian University of Technology, 116024, Dalian China (China); Zhao, Y.; Liu, D.D. [Institute of Nano-photonics, School of Physics and Materials Engineering, Dalian Nationalities University, 116600 Dalian (China); Cong, Y., E-mail: congyan@ciomp.ac.cn [Institute of Nano-photonics, School of Physics and Materials Engineering, Dalian Nationalities University, 116600 Dalian (China); Buck, V. [Thin Film Technology Group, Faculty of Physics, University Duisburg-Essen and CeNIDE, 47057 Duisburg (Germany)

    2015-09-01

    Diamond-like carbon (DLC) films were deposited on three-dimensional (3D) shape substrate model by electrolysis of 2-propanol solution at low temperature (60 °C). This 3D shape model was composed of a horizontally aligned stainless steel wafer and vertically aligned stainless steel rods. Morphology and microstructure of the films were analyzed by scanning electron microscopy (SEM), atomic force microscopy (AFM) and Raman spectroscopy, respectively. The results suggested there were only differences in film uniformity and thickness for two kinds of samples. The hydrogenated amorphous carbon films deposited on horizontally aligned substrate were smooth and homogeneous. And the film thickness of DLC films gained on the vertical substrates decreased along vertical direction. It is believed that bubble formation could enhance nucleation on the wetted capillary area. This experiment shows that deposition of DLC films by liquid phase deposition on 3D shape conductive substrates is possible. - Highlights: • DLC film is expected to be deposited on complex surface/shape substrate. • DLC film is deposited on 3D shape substrate by liquid electrochemical method. • Horizontal substrate is covered by smooth and homogeneous DLC films. • Film thickness decreases along vertical direction due to boiling effect.

  9. Lg = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD

    International Nuclear Information System (INIS)

    Huang Jie; Li Ming; Tang Chak-Wah; Lau Kei-May

    2014-01-01

    High-performance AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrates by metal—organic chemical-vapor deposition (MOCVD) with a selective non-planar n-type GaN source/drain (S/D) regrowth are reported. A device exhibited a non-alloyed Ohmic contact resistance of 0.209 Ω·mm and a comprehensive transconductance (g m ) of 247 mS/mm. The current gain cutoff frequency f T and maximum oscillation frequency f MAX of 100-nm HEMT with S/D regrowth were measured to be 65 GHz and 69 GHz. Compared with those of the standard GaN HEMT on silicon substrate, the f T and f MAX is 50% and 52% higher, respectively. (interdisciplinary physics and related areas of science and technology)

  10. Nitrogen doping for adhesion improvement of DLC film deposited on Si substrate by Filtered Cathodic Vacuum Arc (FCVA) technique

    Energy Technology Data Exchange (ETDEWEB)

    Bootkul, D., E-mail: mo_duangkhae@hotmail.com [Department of General Science, Faculty of Science, Srinakharinwirot University, Bangkok 10110 (Thailand); Supsermpol, B.; Saenphinit, N. [Western Digital Company, Ayutthaya 13160 (Thailand); Aramwit, C. [Plasma and Beam Physics Research Facility, Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50202 (Thailand); Intarasiri, S., E-mail: saweat@gmail.com [Science and Technology Research Institute, Chiang Mai University, Chiang Mai 50202 (Thailand)

    2014-08-15

    Diamond-like carbon (DLC) films have been used in many applications due to their attractive combination of properties including chemical inertness, corrosion protection, biocompatibility, high hardness, and low wear rates. However, they still have some limitations such as high internal stresses and low toughness which lead to poor adhesion of films. Synthesis of nitrogen-doped DLC (N-DLC) offers the possibility of overcoming these limitations. In this study, DLC films, namely tetrahedral amorphous carbon (ta-C) and nitrogen doped tetrahedral amorphous carbon (ta-C:N) were deposited on single crystalline Si wafer substrates using the Filtered Cathodic Vacuum Arc (FCVA) technique. Film characterizations were carried out by Raman spectroscopy, atomic force microscopy (AFM), scanning electron microscopy (SEM), triboindenter tester and nano-scratch tester. Measurement results showed that intentionally doping with nitrogen reduced the carbon sp{sup 3} content and increased the surface roughness in comparison with that of pure ta-C films. The hardness measurement confirmed the Raman and AFM analyses that adding nitrogen in ta-C films decreased the hardness, especially with high nitrogen content. However, the nano-scratch test revealed the increasing of the critical load with nitrogen. This work, then, extended its scope to investigate the properties of double-layer ta-C films which were composed of ta-C:N interlayer of various thickness around 10–30 nm and ta-C top-layer with thickness of around 80 nm. Microstructure characterization demonstrated that a ta-C:N interlayer gradually decreased the sp{sup 3} fraction in the films and increased film roughness whenever the ta-C:N interlayer thickness increased. In this structure, the tribological property in terms of adhesion to the Si substrate was significantly improved by about 20–90%, but the mechanical property in terms of hardness was gradually degraded by about 2–10%, compared to pure ta-C film, when the ta

  11. Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach

    Science.gov (United States)

    Izyumskaya, N.; Okur, S.; Zhang, F.; Monavarian, M.; Avrutin, V.; Özgür, Ü.; Metzner, S.; Karbaum, C.; Bertram, F.; Christen, J.; Morkoç, H.

    2014-03-01

    Nonpolar m-plane GaN layers were grown on patterned Si (112) substrates by metal-organic chemical vapor deposition (MOCVD). A two-step growth procedure involving a low-pressure (30 Torr) first step to ensure formation of the m-plane facet and a high-pressure step (200 Torr) for improvement of optical quality was employed. The layers grown in two steps show improvement of the optical quality: the near-bandedge photoluminescence (PL) intensity is about 3 times higher than that for the layers grown at low pressure, and deep emission is considerably weaker. However, emission intensity from m-GaN is still lower than that of polar and semipolar (1 100 ) reference samples grown under the same conditions. To shed light on this problem, spatial distribution of optical emission over the c+ and c- wings of the nonpolar GaN/Si was studied by spatially resolved cathodoluminescence and near-field scanning optical microscopy.

  12. Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

    Directory of Open Access Journals (Sweden)

    Xiaoqing Xu

    2016-11-01

    Full Text Available In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG properties of AlGaN/GaN high electron mobility transistor (HEMT structure grown by metal-organic chemical vapor deposition (MOCVD on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72% across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm2/V⋅s at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm2/V⋅s which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si.

  13. Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

    International Nuclear Information System (INIS)

    Wu, Bin; Zhang, Yuantao; Shi, Zhifeng; Li, Xiang; Cui, Xijun; Zhuang, Shiwei; Zhang, Baolin; Du, Guotong

    2014-01-01

    Epitaxial ZnO structures with inherent two layers of nanorods layer on film layer were fabricated on c-Al 2 O 3 by metal-organic chemical vapor deposition (MOCVD) and studied by photoluminescence. Specially, photoluminescence spectra for the film layer were obtained by rendering the excitation from the substrate side. Different defect levels configurations between nanorods and film were revealed. Zinc vacancies tend to form in top nanorods layer, whereas abundant zinc–oxygen divacancies accumulate in bottom film layer. An acceptor state with activation energy of ∼200 meV is exclusive to the film layer. The stacking fault related acceptor and Al introduced donor are present in both layers. Besides, two other defect related donors contained in the nanorods layer perhaps also exist within the film layer. - Highlights: • Inherent double layer ZnO of nanorods on film layer were studied by PL. • V Zn tend to form in the nanorods layer, and V ZnO accumulate in the film layer. • An acceptor with activation energy of ∼200 meV is exclusive to the film layer. • Pure NBE emission without DLE in RT PL spectrum does not mean good crystallinity

  14. Growth and characterization of tin disulfide (SnS2) thin film deposited by successive ionic layer adsorption and reaction (SILAR) technique

    International Nuclear Information System (INIS)

    Deshpande, N.G.; Sagade, A.A.; Gudage, Y.G.; Lokhande, C.D.; Sharma, Ramphal

    2007-01-01

    Thin films of tin disulfide (SnS 2 ) have been deposited by using low cost successive ionic layer adsorption and reaction (SILAR) technique. The deposition parameters such as SILAR cycles (60), immersion time (20 s), rinsing time (10 s) and deposition temperature (27 o C) were optimized to obtain good quality of films. Physical investigations were made to study the structural, optical and electrical properties. X-ray diffraction (XRD) patterns reveal that the deposited SnS 2 thin films have hexagonal crystal structure. Energy dispersive X-ray analysis (EDAX) indicated elemental ratio close to those for tin disulfide (SnS (2.02) ). Uniform deposition of the material over the entire glass substrate was revealed by scanning electron microscopy (SEM). Atomic force microscopy (AFM) showed the film is uniform and the substrate surface is well covered with small spherical grains merged in each other. A direct band gap of 2.22 eV was obtained. Photoluminescence (PL) showed two strong peaks corresponding to green and red emission. Ag/SnS 2 junction showed Schottky diode like I-V characteristics. The barrier height calculated was 0.22 eV. Thermoelectric power (TEP) properties showed that tin disulfide exhibits n-type conductivity

  15. Atomic force microscopy and Langmuir-Blodgett monolayer technique to assess contact lens deposits and human meibum extracts.

    Science.gov (United States)

    Hagedorn, Sarah; Drolle, Elizabeth; Lorentz, Holly; Srinivasan, Sruthi; Leonenko, Zoya; Jones, Lyndon

    2015-01-01

    The purpose of this exploratory study was to investigate the differences in meibomian gland secretions, contact lens (CL) lipid extracts, and CL surface topography between participants with and without meibomian gland dysfunction (MGD). Meibum study: Meibum was collected from all participants and studied via Langmuir-Blodgett (LB) deposition with subsequent Atomic Force Microscopy (AFM) visualization and surface roughness analysis. CL Study: Participants with and without MGD wore both etafilcon A and balafilcon A CLs in two different phases. CL lipid deposits were extracted and analyzed using pressure-area isotherms with the LB trough and CL surface topographies and roughness values were visualized using AFM. Meibum study: Non-MGD participant meibum samples showed larger, circular aggregates with lower surface roughness, whereas meibum samples from participants with MGD showed more lipid aggregates, greater size variability and higher surface roughness. CL Study: Worn CLs from participants with MGD had a few large tear film deposits with lower surface roughness, whereas non-MGD participant-worn lenses had many small lens deposits with higher surface roughness. Balafilcon A pore depths were shallower in MGD participant worn lenses when compared to non-MGD participant lenses. Isotherms of CL lipid extracts from MGD and non-MGD participants showed a seamless rise in surface pressure as area decreased; however, extracts from the two different lens materials produced different isotherms. MGD and non-MGD participant-worn CL deposition were found to differ in type, amount, and pattern of lens deposits. Lipids from MGD participants deposited irregularly whereas lipids from non-MGD participants showed more uniformity. Copyright © 2014 Spanish General Council of Optometry. Published by Elsevier Espana. All rights reserved.

  16. High and Low Energy Proton Radiation Damage in p/n InP MOCVD Solar Cells

    Science.gov (United States)

    Rybicki, George; Weinberg, Irv; Scheiman, Dave; Vargas-Aburto, Carlos; Uribe, Roberto

    1995-01-01

    InP p(+)/n/n(+) solar cells, fabricated by metal organic chemical vapor deposition, (MOCVD) were irradiated with 0.2 MeV and 10 MeV protons to a fluence of 10(exp 13)/sq cm. The power output degradation, IV behavior, carrier concentration and defect concentration were observed at intermediate points throughout the irradiations. The 0.2 MeV proton-irradiated solar cells suffered much greater and more rapid degradation in power output than those irradiated with 10 MeV protons. The efficiency losses were accompanied by larger increases in the recombination currents in the 0.2 MeV proton-irradiated solar cells. The low energy proton irradiations also had a larger impact on the series resistance of the solar cells. Despite the radiation induced damage, the carrier concentration in the base of the solar cells showed no reduction after 10 MeV or 0.2 MeV proton irradiations and even increased during irradiation with 0.2 MeV protons. In a deep level transient spectroscopy (DLTS) study of the irradiated samples, the minority carrier defects H4 and H5 at E(sub v) + 0.33 and E(sub v) + 0.52 eV and the majority carrier defects E7 and El0 at E(sub c) - 0.39 and E(sub c) - 0.74 eV, were observed. The defect introduction rates for the 0.2 MeV proton irradiations were about 20 times higher than for the 10 MeV proton irradiations. The defect El0, observed here after irradiation, has been shown to act as a donor in irradiated n-type InP and may be responsible for obscuring carrier removal. The results of this study are consistent with the much greater damage produced by low energy protons whose limited range causes them to stop in the active region of the solar cell.

  17. Buffer optimization for crack-free GaN epitaxial layers grown on Si(1 1 1) substrate by MOCVD

    International Nuclear Information System (INIS)

    Arslan, Engin; Ozbay, Ekmel; Ozturk, Mustafa K; Ozcelik, Suleyman; Teke, Ali

    2008-01-01

    We report the growth of GaN films on the Si(1 1 1) substrate by metalorganic chemical vapour phase deposition (MOCVD). Different buffer layers were used to investigate their effects on the structural and optical properties of GaN layers. A series of GaN layers were grown on Si(1 1 1) with different buffer layers and buffer thicknesses and were characterized by Nomarski microscopy, atomic force microscopy, high-resolution x-ray diffraction (XRD) and photoluminescence (PL) measurements. We first discuss the optimization of the LT-AlN/HT-AlN/Si(1 1 1) templates and then the optimization of the graded AlGaN intermediate layers. In order to prevent stress relaxation, step-graded AlGaN layers were introduced along with a crack-free GaN layer of thickness exceeding 2.6 μm. The XRD and PL measurements results confirmed that a wurtzite GaN was successfully grown. The resulting GaN film surfaces were flat, mirror-like and crack-free. The mosaic structure in the GaN layers was investigated. With a combination of Williamson-Hall measurements and the fitting of twist angles, it was found that the buffer thickness determines the lateral coherence length, vertical coherence length, as well as the tilt and twist of the mosaic blocks in GaN films. The PL spectra at 8 K show that a strong band edge photoluminescence of GaN on Si (1 1 1) emits light at an energy of 3.449 eV with a full width at half maximum (FWHM) of approximately 16 meV. At room temperature, the peak position and FWHM of this emission become 3.390 eV and 58 meV, respectively. The origin of this peak was attributed to the neutral donor bound exciton. It was found that the optimized total thickness of the AlN and graded AlGaN layers played a very important role in the improvement of quality and in turn reduced the cracks during the growth of GaN/Si(1 1 1) epitaxial layers

  18. Temperature Uniformity of Wafer on a Large-Sized Susceptor for a Nitride Vertical MOCVD Reactor

    International Nuclear Information System (INIS)

    Li Zhi-Ming; Jiang Hai-Ying; Han Yan-Bin; Li Jin-Ping; Yin Jian-Qin; Zhang Jin-Cheng

    2012-01-01

    The effect of coil location on wafer temperature is analyzed in a vertical MOCVD reactor by induction heating. It is observed that the temperature distribution in the wafer with the coils under the graphite susceptor is more uniform than that with the coils around the outside wall of the reactor. For the case of coils under the susceptor, we find that the thickness of the susceptor, the distance from the coils to the susceptor bottom and the coil turns significantly affect the temperature uniformity of the wafer. An optimization process is executed for a 3-inch susceptor with this kind of structure, resulting in a large improvement in the temperature uniformity. A further optimization demonstrates that the new susceptor structure is also suitable for either multiple wafers or large-sized wafers approaching 6 and 8 inches

  19. Enhanced performance of CdS/CdTe thin-film devices through temperature profiling techniques applied to close-spaced sublimation deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xiaonan Li; Sheldon, P.; Moutinho, H.; Matson, R. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    The authors describe a methodology developed and applied to the close-spaced sublimation technique for thin-film CdTe deposition. The developed temperature profiles consisted of three discrete temperature segments, which the authors called the nucleation, plugging, and annealing temperatures. They have demonstrated that these temperature profiles can be used to grow large-grain material, plug pinholes, and improve CdS/CdTe photovoltaic device performance by about 15%. The improved material and device properties have been obtained while maintaining deposition temperatures compatible with commercially available substrates. This temperature profiling technique can be easily applied to a manufacturing environment by adjusting the temperature as a function of substrate position instead of time.

  20. Structural and superconducting properties of (Y,Gd)Ba{sub 2}Cu{sub 3}O{sub 7-{delta}} grown by MOCVD on samarium zirconate buffered IBAD-MgO

    Energy Technology Data Exchange (ETDEWEB)

    Stan, L; Holesinger, T G; Maiorov, B; Feldmann, D M; Usov, I O; DePaula, R F; Civale, L; Foltyn, S R; Jia, Q X [Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545 (United States); Chen, Y; Selvamanickam, V [SuperPower, Incorporated, 450 Duane Avenue, Schenectady, NY 12304 (United States)

    2008-10-01

    Textured samarium zirconate (SZO) films have been grown by reactive cosputtering directly on an ion beam assisted deposited (IBAD) MgO template, without an intermediate homoepitaxial MgO layer. The subsequent growth of 0.9 {mu}m thick (Y,Gd)Ba{sub 2}Cu{sub 3}O{sub 7-{delta}} ((Y, Gd)BCO) films by metal organic chemical vapor deposition (MOCVD) yielded well textured films with a full width at half maximum of 1.9{sup 0} and 3.4{sup 0} for the out-of-plane and in-plane texture, respectively. Microstructural characterizations of the SZO buffered samples revealed clean interfaces. This indicates that the SZO not only provides a diffusion barrier, but also functions as a buffer for (Y, Gd)BCO grown by MOCVD. The achievement of self-field critical current densities (J{sub c}) of over 2 MA cm{sup -2} at 75.5 K is another proof of the effectiveness of SZO as a buffer on the IBAD-MgO template. The in-field measurements revealed an asymmetric angular dependence of J{sub c} and a shift of the ab-plane maxima due to the tilted nature of the template and (Y,Gd){sub 2}O{sub 3} particles existing in the (Y, Gd)BCO matrix. The present results are especially important because they demonstrate that high temperature superconducting coated conductors with simpler architecture can be fabricated using commercially viable processes.

  1. On the sub-band gap optical absorption in heat treated cadmium sulphide thin film deposited on glass by chemical bath deposition technique

    International Nuclear Information System (INIS)

    Chattopadhyay, P.; Karim, B.; Guha Roy, S.

    2013-01-01

    The sub-band gap optical absorption in chemical bath deposited cadmium sulphide thin films annealed at different temperatures has been critically analyzed with special reference to Urbach relation. It has been found that the absorption co-efficient of the material in the sub-band gap region is nearly constant up to a certain critical value of the photon energy. However, as the photon energy exceeds the critical value, the absorption coefficient increases exponentially indicating the dominance of Urbach rule. The absorption coefficients in the constant absorption region and the Urbach region have been found to be sensitive to annealing temperature. A critical examination of the temperature dependence of the absorption coefficient indicates two different kinds of optical transitions to be operative in the sub-band gap region. After a careful analyses of SEM images, energy dispersive x-ray spectra, and the dc current-voltage characteristics, we conclude that the absorption spectra in the sub-band gap domain is possibly associated with optical transition processes involving deep levels and the grain boundary states of the material

  2. On the sub-band gap optical absorption in heat treated cadmium sulphide thin film deposited on glass by chemical bath deposition technique

    Science.gov (United States)

    Chattopadhyay, P.; Karim, B.; Guha Roy, S.

    2013-12-01

    The sub-band gap optical absorption in chemical bath deposited cadmium sulphide thin films annealed at different temperatures has been critically analyzed with special reference to Urbach relation. It has been found that the absorption co-efficient of the material in the sub-band gap region is nearly constant up to a certain critical value of the photon energy. However, as the photon energy exceeds the critical value, the absorption coefficient increases exponentially indicating the dominance of Urbach rule. The absorption coefficients in the constant absorption region and the Urbach region have been found to be sensitive to annealing temperature. A critical examination of the temperature dependence of the absorption coefficient indicates two different kinds of optical transitions to be operative in the sub-band gap region. After a careful analyses of SEM images, energy dispersive x-ray spectra, and the dc current-voltage characteristics, we conclude that the absorption spectra in the sub-band gap domain is possibly associated with optical transition processes involving deep levels and the grain boundary states of the material.

  3. Structural and optical studied of nano structured lead sulfide thin films prepared by the chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Al Din, Nasser Saad, E-mail: nsaadaldin@yahoo.com; Hussain, Nabiha, E-mail: nabihahssin@yahoo.com [Damascus University Faculty of Science, Department of physics, Homs (Syrian Arab Republic); Jandow, Nidhal, E-mail: nidhaljandow@yahoo.com [Al –Mustansiriyah University, College of Education, Department of physics, Baghdad (Iraq)

    2016-07-25

    Lead (II) Sulfide PbS thin films were deposited on glass substrates at 25°C by chemical bath deposition (CBD) method. The structural properties of the films were studied as a function of the concentration of Thiourea (CS (NH{sub 2}){sub 2}) as Source of Sulfide and deposition time. The surface morphology of the films was characterized by X-ray diffraction and SEM. The obtained results showed that the as-deposited films Polycrystalline had cubic crystalline phase that belong to S.G: Fm3m. We found that they have preferred orientation [200]. Also the thickness of thin films decrease with deposition time after certain value and, it observed free sulfide had orthorhombic phase. Optical properties showed that the thin films have high transmission at visible range and low transmission at UV, IR range. The films of PbS have direct band gap (I.68 - 2.32 ev) at 300 K the values of band energy decreases with increases thickness of the Lead (II) Sulfide films.

  4. High index of refraction films for dielectric mirrors prepared by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Brusasco, R.M.

    1989-01-01

    A wide variety of metal oxides with high index of refraction can be prepared by Metal-Organic Chemical Vapor Deposition. We present some recent optical and laser damage results on oxide films prepared by MOCVD which could be used in a multilayer structure for highly reflecting (HR) dielectric mirror applications. The method of preparation affects both optical properties and laser damage threshold. 10 refs., 8 figs., 4 tabs

  5. The Influence of Selected Fingerprint Enhancement Techniques on Forensic DNA Typing of Epithelial Cells Deposited on Porous Surfaces.

    Science.gov (United States)

    Tsai, Li-Chin; Lee, Cheng-Chang; Chen, Chun-Chieh; Lee, James Chun-I; Wang, Sheng-Meng; Huang, Nu-En; Linacre, Adrian; Hsieh, Hsing-Mei

    2016-01-01

    Fingerprints deposited at crime scene can be a source of DNA. Previous reports on the effects of fingerprint enhancement methods have focused mainly on fingermarks deposited in blood or saliva. Here, we evaluate the effects of fingerprint enhancement methods on fingerprints deposited on porous surfaces. We performed real-time quantification and STR typing, the results of which indicated that two methods (iodine fuming and 1,2-indanedione in ethyl acetate enhancement) had no effect on the quantity of DNA isolated and resultant STR alleles when compared to control samples. DNA quantities and allele numbers were lower for samples enhanced with silver nitrate and 1,2-indanedione in acetic acid when compared to control samples. Based on DNA quantity, quality, and observable stochastic effects, our data indicated that iodine fuming and 1,2-indanedione in ethyl acetate were the preferred options for the enhancement of fingerprints on porous surfaces. © 2015 American Academy of Forensic Sciences.

  6. Discussion on numerical simulation techniques for patterns of water vapor rise and droplet deposition at NPP cooling tower

    International Nuclear Information System (INIS)

    Guo Dongpeng; Yao Rentai

    2010-01-01

    Based on the working principle of cooling tower, analysis and comparison are made of both advantages and disadvantages of the numerical simulation models, such as ORFAD, KUMULUS, ISCST:A, ANL/UI, CFD etc., which predict the rise and droplet deposition pattern of cooling tower water vapor. The results showed that, CFD model is currently a better model that is used of three-dimensional Renault fluid flow equations predicting the rise and droplet deposition pattern of cooling tower water vapor. The impact of the line trajectory deviation and the speed change inn plume rising is not considered in any other models, and they can not be used for prediction of particle rise and droplet deposition when a larger particle or large buildings in the direction of cooling tower. (authors)

  7. Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1997-03-01

    techniques have paved the way for obtaining epitaxial Hg1-xCdxTe thin films at substrate temperatures of ~180 °C with the desired crystalline perfection, stoichiometry, and doping without the necessity of further annealing for improving either the crystalline quality or dopant activity. Retaining larger mercury proportions during annealing would require heated enclosures as in isothermal VPE, hot-wall technique, vacuum evaporation, hot-wall MOCVD, or close-space sublimation. Pb1-xCdxTe thin films can be prepared by magnetron sputtering from cooled Pb1-xCdxTe targets on heated substrates. Hot-wall technique is suitable for the deposition of Pb1-xCdxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe TPV cells will benefit from the substantial work on CdTe thin film solar cells. The paper reviews work on thin films of ternary and pseudoternary compounds of interest for TPV conversion and methods of their preparation with a view to choosing the appropriate materials and fabrication techniques for polycrystalline-thin-film TPV cells.

  8. Interface studies on the tunneling contact of a MOCVD-prepared tandem solar cell; Grenzflaechenuntersuchungen am Tunnelkontakt einer MOCVD-praeparierten Tandemsolarzelle

    Energy Technology Data Exchange (ETDEWEB)

    Seidel, U.

    2007-07-10

    In this thesis a tandem solar cell with a novel tunneling contact was developed. For the development of the monolithic preparation especailly critical hetero-interfaces were studied in the region of the tunneling contact with surface-sensitive measuring method. The tandem solar cell consisted of single solar cells with absorber layers of In{sub 0.53}Ga{sub 0.47}As (E{sub g}=0.73 eV) and In{sub 0.78}Ga{sub 0.22}As{sub 0.491}P{sub 0.51} (E{sub g}=1.03 eV), the serial switching of which was pursued with a tunneling contact (ESAKI diode, which consisted of a very thin n-doped InGaAs and a p-doped GaAsSb layer. The III-V semiconductor layers were prepared by metalorganic gas phase epitaxy (MOCVD) monocrystallinely on an InP(100) substrate lattice-matchedly. Especially the influence of the preparation of InGaAs surfaces on the sharpness of the InGaAs/GaAsSb interface was in-situ studied by reflection-anisotropy spectroscopy and after a contamination-free transfer into the ultrahigh vacuum with photoelectron spectroscopy and with low-energetic electron diffraction (LEED). Thereby for the first time three different reconstructions of the MOCVD-prepared InGaAs surfaces could be observed, which were dependent on the heating temperature under pure hydrogen. The arsenic-rich InGaAs surface was observed for temperatures less than 300 C and showed in the LEED picture a (4 x 3) reconstruction. In the temperature range from 300 C until about 500 C a (2 x 4) reconstruction was observed, above 500 C the InGaAs surface 94 x 2)/c(8 x 2) was reconstructed. Subsequently the study of the growth of thin GaAsSb layers on these three InGaAs surface reconstructions followed. XPS measurements showed that the Sb/As ratio in GaAsSb at the growth on the As-rich (4 x 3) reconstructed surface in the first monolayers was too low. The preparation of the GaAsSb on the two other InGaAs surfaces yielded however in both cases a distinctly higher Sb/As ratio. Finally tandem solar cells with differently

  9. Understanding and optimization of InN and high indium containing InGaN alloys by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Tuna, Oecal

    2013-01-01

    Among the III-nitride semiconductors (Ga,Al,In)N, InN is the most attractive one due to having the narrowest bandgap of 0.64 eV. The revision in the bandgap of InN makes the InGaN more important since one can cover the whole solar spectrum by only changing In composition in an InGaN layer. The comparison of quality of InN and InGaN layers grown using a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) methods indicate that growth with MOCVD is the more challenging, again due to the high dissociation temperature of NH 3 relative to the low decomposition temperature of InN (560-570 C). However, there is significant interest in developing an MOCVD process for InN and InGaN growth since MOCVD technology is the technology currently in use for commercial fabrication of group III nitride thin films. This thesis is therefore focused on a study of MOCVD growth of n- and p-type InN and In-rich InGaN films with the goal of providing new information on the influence of growth conditions on the film properties. Initially, a detailed investigation of MOCVD of InN is given. It is shown that MOCVD growth parameters (growth temperature and V/III ratio) have impacts on the layer properties such as In droplet formation on the surface as well as on its electrical and optical properties. PAS is employed for point defect analyzation. It is shown that In vacancies isolated by nitrogen vacancies are the dominant vacancy-type positron traps in InN. A decrease in the N vacancy concentration in InN is observed as a result of the growth temperature increase from 500 to 550 C. This is an indication of a reduction of N vacancy concentration by enhancing NH 3 dissociation at high growth temperature. Results obtained from optical techniques (Raman and PL) are used to estimate the free carrier concentrations in InN. Electrical characterizations are also carried out using Hall measurements. Carrier concentration values obtained by these three techniques revealed a

  10. Physics of enriched uranyl fluoride deposit characterizations using active neutron and gamma interrogation techniques with 252Cf

    International Nuclear Information System (INIS)

    Wyatt, M.S.; Hannon, T.F.

    1998-01-01

    A method was developed and successfully applied to characterize large uranyl fluoride (UO 2 F 21 ) deposits at the former Oak Ridge Gaseous Diffusion Plant. These deposits were formed by a wet air in-leakage into the UF 6 process gas lines over a period of years. The resulting UO 2 F 2 is hygroscopic, readily absorbing moisture from the air to form hydrates as UO 2 F 2 -nH 2 O. The ratio of hydrogen to uranium, denoted H/U, can vary from 0--16, and has significant nuclear criticality safety impacts for large deposits. In order to properly formulate the required course of action, a non-intrusive characterization of the distribution of the fissile material within the pipe, its total mass, and amount of hydration was needed. The Nuclear Weapons Identification System (NWIS) previously developed at the Oak Ridge Y-12 Plant for identification of uranium weapons components in storage containers was used to successfully characterize the distribution, hydration, and total mass of these deposits

  11. Thiol-modified gold-coated glass as an efficient hydrophobic substrate for drop coating deposition Raman (DCDR) technique

    Czech Academy of Sciences Publication Activity Database

    Kočišová, E.; Procházka, M.; Šípová, Hana

    2016-01-01

    Roč. 47, č. 11 (2016), s. 1394-1396 ISSN 0377-0486 R&D Projects: GA ČR(CZ) GBP205/12/G118 Institutional support: RVO:67985882 Keywords : thiol-modified Au-coated glass * drop coating deposition Raman * liposome Subject RIV: BH - Optics, Masers, Lasers Impact factor: 2.969, year: 2016

  12. Tunable white light emission from hafnium oxide films co-doped with trivalent terbium and europium ions deposited by Pyrosol technique

    Energy Technology Data Exchange (ETDEWEB)

    Guzman-Olguin, J.C.; Montes, E.; Guzman-Mendoza, J. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada del Instituto Politecnico Nacional, Unidad Legaria (Mexico); Baez-Rodriguez, A.; Zamora-Peredo, L. [Centro de Investigacion en Micro y Nanotecnologia, Universidad Veracruzana, Boca del Rio, Ver (Mexico); Garcia-Hipolito, M.; Alvarez-Fregoso, O. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Circuito Exterior, Ciudad Universitaria, Coyoacan (Mexico); Martinez-Merlin, I.; Falcony, C. [Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional (Mexico)

    2017-10-15

    In this paper, the photo and cathodoluminescent properties of HfO{sub 2} films optically activated with different atomic concentrations of Tb{sup 3+} and Eu{sup 3+} ions, deposited by the Pyrosol technique, are reported. These films were deposited at temperatures from 400 to 600 C, using chlorides as raw materials. The surface morphologies of all deposited films were rough and dense. X-ray diffraction analysis showed that the films deposited at 600 C were polycrystalline exhibiting the HfO{sub 2} monoclinic phase. The tuning by the means of the excitation wavelength generates photoluminescence spectra, for co-doped films, in several emissions from blue to yellow (including white light) due to the characteristic electronic transitions of Tb{sup 3+} (green), Eu{sup 3+}(red) ions and the violet-blue emission associated to the host lattice (HfO{sub 2}). According to the chromaticity diagram, the best white light is reached for the sample S2 excited with 382 nm (x = 0.3343, y = 0.3406). The cathodoluminescence emission spectra for co-doped films showed emissions from green to red (including yellow, orange and other intermediate emissions). The averaged quantum efficiency values of the sample labeled as S2 resulted between 47 and 78% depending on the excitation wavelength. In addition, XPS, TEM, SEM and decay times were performed to characterize these films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Electrically conducting oxide buffer layers on biaxially textured nickel alloy tapes by reel-to-reel MOCVD process

    International Nuclear Information System (INIS)

    Stadel, O; Samoilenkov, S V; Muydinov, R Yu; Schmidt, J; Keune, H; Wahl, G; Gorbenko, O Yu; Korsakov, I E; Melnikov, O V; Kaul, A R

    2006-01-01

    Reel-to-reel MOCVD process for continuous growth of electrically conducting buffer layers on biaxially textured Ni5W tapes has been developed. The new buffer layer architechture is presented: 200 nm (La, Ba) 2 CuO 4 /40 nm (La, Ba)MnO 3 /Ni5W. Constituting layers with high structural quality have been grown on moving tapes (in plane FWHM ≤ 6 0 and out of plane FWHM ≤ 3 0 )

  14. Industrial metalorganic chemical vapor deposition technology for the growth of YBa2Cu3O7-∂

    International Nuclear Information System (INIS)

    Schulte, B.; Richards, B.C.; Cook, S.L.

    1997-01-01

    MOCVD is the established technology for the mass production of compound semiconductors for e.g. opto-electronic devices. To transfer the MOCVD technology for HTS films to the standard MOCVD technology used in semiconductor production two major challenges have to be solved: 1. the Ba-precursor instability and 2. the demonstration of uniform deposition of HTS films onto large area substrates. This paper presents an industrial MOCVD process solving these challenges using a new stable fluorinated Ba-precursor and a gas foil rotation trademark susceptor. On a 2 inch diameter substrate area state-of-the-art YBCO thin films were fabricated having a thickness uniformity of 1% and compositional uniformity of 2% and 5% for Y/Ba and Cu/Ba, respectively. The films show a surface morphology with low defect density ( 2 ) and excellent superconducting properties (T c (50%) > 90 K, j c (T=77 K, B=0T) > 5 x 10 6 A cm -2 ). The residual contamination by fluorine was determined by SIMS to be less than 250 ppm. This gives the strong evidence that this industrial process can be transferred to the multiwafer planetary reactors trademark for mass production. (orig.)

  15. Characterization of Pd catalyst-electrodes deposited on YSZ: Influence of the preparation technique and the presence of a ceria interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez-Borja, Carmen, E-mail: Carmen.JBorja@uclm.es [Departamento de Ingenieria Quimica, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha. Avenida Camilo Jose Cela 12, 13071 Ciudad Real (Spain); Matei, Florina [Department of Petroleum Processing Engineering and Environmental Protection, Petroleum - Gas University of Ploiesti (Romania); Dorado, Fernando; Valverde, Jose Luis [Departamento de Ingenieria Quimica, Facultad de Ciencias Quimicas, Universidad de Castilla-La Mancha. Avenida Camilo Jose Cela 12, 13071 Ciudad Real (Spain)

    2012-11-15

    Highlights: Black-Right-Pointing-Pointer Impregnation of palladium over YSZ led to more dispersed films. Black-Right-Pointing-Pointer XPS spectra indicated electron deficient Pd{sup 2+} species on the surface of palladium films. Black-Right-Pointing-Pointer Impregnated palladium films were more active than those prepared by paste deposition Black-Right-Pointing-Pointer The addition of a CeO{sub 2} interlayer enhanced the catalytic rate for the impregnated samples. - Abstract: Palladium catalyst-electrodes supported on Y{sub 2}O{sub 3}-stabilized-ZrO{sub 2} (YSZ) prepared either by paste deposition or wet impregnation technique were characterized using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). It was found a strong dependence of the catalytic film preparation technique as well as of the presence of a ceria interlayer between the palladium film and the solid electrolyte on the catalytic activity towards methane oxidation. Impregnated palladium films were found to be more active than films prepared by paste deposition. Besides, the addition of ceria allowed stabilizing the palladium active phase for methane oxidation.

  16. Effects of water inflow into a deposition hole - Influence of pellets type and of buffer block manufacturing technique

    Energy Technology Data Exchange (ETDEWEB)

    Johannesson, Lars-Erik; Jense, Viktor [Clay Technology AB, Lund (Sweden)

    2012-10-15

    During the installation of buffer and canister in a deposition hole a number of different problems can arise. The problems are mainly connected to water flow from fractures in the rock into the deposition hole. According to the reference design for the KBS-3V concept, the buffer is protected with a special sheet made of rubber during the installation phase. This protection sheet will at some stage be removed and the outer gap between the buffer blocks and the rock surface will be filled with bentonite pellets. The interaction of buffer blocks and pellets have previously been investigated. The focuses of those studies were the following processes: 1. Erosion. Erosion of bentonite from the deposition hole up into the tunnel backfill material. This process will continue until a tunnel plug has been installed and the backfill is saturated. 2. Heave. Early wetting of the pellets filling may cause a heave of the buffer blocks into the backfill that will decrease the density of the buffer. The laboratory tests presented in this study are complementing previous investigations by focusing on how the choice of manufacturing process for the bentonite blocks (isostatic or uniaxial compaction) and pellets (roller compaction or extrusion) are affecting erosion and the heaving effect.

  17. The Application of Borehole Seismic Techniques in Mine Development at the Millennium Uranium Deposit, Northern Saskatchewan, Canada

    Energy Technology Data Exchange (ETDEWEB)

    Wood, G.; O’Dowd, C., E-mail: garnet_wood@cameco.com [Cameco Corporation, Saskatoon, Saskatchewan (Canada); Cosma, C.; Enescu, N. [Vibrometric Canada Ltd., Toronto, Ontario (Canada)

    2014-05-15

    The Millennium uranium deposit is located within the Athabasca Basin of northern Saskatchewan, Canada. The deposit is situated in metasedimentary rocks, is controlled by multiple sub-vertical faults, and crossfaults and is overlain by over 500 m of intensely altered, porous Manitou Falls group sandstones. The rock quality directly surrounding the deposit is greatly reduced because of alteration and post-Athabasca sandstone structures, which provide conduits for the migration of basinal and meteoric fluids. This leads to significant risk for mine development and shaft sinking, because of the increased potential for water inflow into mine workings. To mitigate the risk involved with mining in such complex geology several projects were proposed as part of a pre-feasibility study. Of these, seismic methods were identified as the best tool to potentially identify alteration and structurally compromised zones. Subsequently, a comprehensive surface and borehole seismic program was completed in an attempt to delineate these engineering hazards and to provide assurance of success of the shaft sinking and mine development. This was the first time a seismic program of this scale was undertaken for geotechnical studies during mine development in the Athabasca Basin. (author)

  18. Effects of water inflow into a deposition hole - Influence of pellets type and of buffer block manufacturing technique

    International Nuclear Information System (INIS)

    Johannesson, Lars-Erik; Jense, Viktor

    2012-10-01

    During the installation of buffer and canister in a deposition hole a number of different problems can arise. The problems are mainly connected to water flow from fractures in the rock into the deposition hole. According to the reference design for the KBS-3V concept, the buffer is protected with a special sheet made of rubber during the installation phase. This protection sheet will at some stage be removed and the outer gap between the buffer blocks and the rock surface will be filled with bentonite pellets. The interaction of buffer blocks and pellets have previously been investigated. The focuses of those studies were the following processes: 1. Erosion. Erosion of bentonite from the deposition hole up into the tunnel backfill material. This process will continue until a tunnel plug has been installed and the backfill is saturated. 2. Heave. Early wetting of the pellets filling may cause a heave of the buffer blocks into the backfill that will decrease the density of the buffer. The laboratory tests presented in this study are complementing previous investigations by focusing on how the choice of manufacturing process for the bentonite blocks (isostatic or uniaxial compaction) and pellets (roller compaction or extrusion) are affecting erosion and the heaving effect

  19. Combining a multi deposition multi annealing technique with a scavenging (Ti) to improve the high-k/metal gate stack performance for a gate-last process

    International Nuclear Information System (INIS)

    Zhang ShuXiang; Yang Hong; Tang Bo; Tang Zhaoyun; Xu Yefeng; Xu Jing; Yan Jiang

    2014-01-01

    ALD HfO 2 films fabricated by a novel multi deposition multi annealing (MDMA) technique are investigated, we have included samples both with and without a Ti scavenging layer. As compared to the reference gate stack treated by conventional one-time deposition and annealing (D and A), devices receiving MDMA show a significant reduction in leakage current. Meanwhile, EOT growth is effectively controlled by the Ti scavenging layer. This improvement strongly correlates with the cycle number of D and A (while keeping the total annealing time and total dielectrics thickness the same). Transmission electron microscope and energy-dispersive X-ray spectroscopy analysis suggests that oxygen incorporation into both the high-k film and the interfacial layer is likely to be responsible for the improvement of the device. This novel MDMA is promising for the development of gate stack technology in a gate last integration scheme. (semiconductor technology)

  20. Structural and electronic properties of InN epitaxial layer grown on c-plane sapphire by chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barick, Barun Kumar, E-mail: bkbarick@gmail.com; Prasad, Nivedita; Saroj, Rajendra Kumar; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology, Bombay, Mumbai 400076 (India)

    2016-09-15

    Growth of InN epilayers on c-plane sapphire substrate by chemical vapor deposition technique using pure indium metal and ammonia as precursors has been systematically explored. It has been found that [0001] oriented indium nitride epitaxial layers with smooth surface morphology can be grown on c-plane sapphire substrates by optimizing the growth conditions. Bandgap of the film is observed to be Burstein–Moss shifted likely to be due to high background electron concentration. It has been found that the concentration of this unintentional doping decreases with the increase in the growth temperature and the ammonia flux. Epitaxial quality on the other hand deteriorates as the growth temperature increases. Moreover, the morphology of the deposited layer has been found to change from flat top islands to faceted mounds as the flow rate of ammonia increases. This phenomenon is expected to be related to the difference in surface termination character at low and high ammonia flow rates.

  1. Physical, optical and electrical properties of copper selenide (CuSe) thin films deposited by solution growth technique at room temperature

    International Nuclear Information System (INIS)

    Gosavi, S.R.; Deshpande, N.G.; Gudage, Y.G.; Sharma, Ramphal

    2008-01-01

    Copper selenide (CuSe) thin films are grown onto amorphous glass substrate from an aqueous alkaline medium using solution growth technique (SGT) at room temperature. The preparative parameters were optimized to obtain good quality of thin films. The as-deposited films were characterized for physical, optical and electrical properties. X-ray diffraction (XRD) pattern reveals that the films are polycrystalline in nature. Energy dispersive analysis by X-ray (EDAX) shows formation of stoichiometric CuSe compound. Uniform deposition of CuSe thin films on glass substrate was observed from scanning electron microscopy (SEM) and atomic force microscopy (AFM) micrographs. Average grain size was determined to 144.53 ± 10 nm using atomic force microscopy. The band gap was found to be 2.03 eV with direct band-to-band transition. Semi-conducting behaviour was observed from resistivity measurements. Ohmic behaviour was seen from I-V curve with good electrical conductivity

  2. Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

    Science.gov (United States)

    Jagannathan, Basanth

    Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

  3. Structural, nanomechanical and variable range hopping conduction behavior of nanocrystalline carbon thin films deposited by the ambient environment assisted filtered cathodic jet carbon arc technique

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Rawal, Ishpal; Tripathi, R.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Srivastava, A.K. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Kumar, Mahesh [Ultrafast Opto-Electronics and Tetrahertz Photonics Group, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India)

    2015-04-15

    Highlights: • Nanocrystalline carbon thin films are grown by filtered cathodic jet carbon arc process. • Effect of gaseous environment on the properties of carbon films has been studied. • The structural and nanomechanical properties of carbon thin films have been studied. • The VRH conduction behavior in nanocrystalline carbon thin films has been studied. - Abstract: This paper reports the deposition and characterization of nanocrystalline carbon thin films by filtered cathodic jet carbon arc technique assisted with three different gaseous environments of helium, nitrogen and hydrogen. All the films are nanocrystalline in nature as observed from the high resolution transmission electron microscopic (HRTEM) measurements, which suggests that the nanocrystallites of size ∼10–50 nm are embedded though out the amorphous matrix. X-ray photoelectron spectroscopic studies suggest that the film deposited under the nitrogen gaseous environment has the highest sp{sup 3}/sp{sup 2} ratio accompanied with the highest hardness of ∼18.34 GPa observed from the nanoindentation technique. The film deposited under the helium gaseous environment has the highest ratio of the area under the Raman D peak to G peak (A{sub D}/A{sub G}) and the highest conductivity (∼2.23 S/cm) at room temperature, whereas, the film deposited under the hydrogen environment has the lowest conductivity value (2.27 × 10{sup −7} S/cm). The temperature dependent dc conduction behavior of all the nanocrystalline carbon thin films has been analyzed in the light of Mott’s variable range hopping (VRH) conduction mechanism and observed that all the films obey three dimension VRH conduction mechanism for the charge transport.

  4. The study and the realization of radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique

    International Nuclear Information System (INIS)

    Jany, Ch.

    1998-01-01

    The aim of this work was to develop radiation detectors made from polycrystalline diamond films grown by microwave plasma enhanced chemical vapour deposition technique. The influence of surface treatments, contact technology and diamond growth parameters on the diamond detectors characteristics was investigated in order to optimise the detector response to alpha particles. The first part of the study focused on the electrical behaviour of as-deposited diamond surface, showing a p type conduction and its influence on the leakage current of the device. A surface preparation process was established in order to reduce the leakage current of the device by surface dehydrogenation using an oxidising step. Several methods to form and treat electrical contacts were also investigated showing that the collection efficiency of the device decreases after contact annealing. In the second part, we reported the influence of the diamond deposition parameters on the characteristics of the detectors. The increase of the deposition temperature and/or methane concentration was shown to lead η to decrease. In contrast, η was found to increase with the micro-wave power. The evolution of the diamond detector characteristics results from the variation in sp 2 phases incorporation and in the crystallography quality of the films. These defects increase the leakage current and reduce the carrier mobility and lifetime. Measurements carried out on detectors with different thicknesses showed that the physical properties varies along the growth direction, improving with the film thickness. Finally, the addition of nitrogen (> 10 ppm) in the gas mixture during diamond deposition was found to strongly reduce the collection efficiency of the detectors. To conclude the study, we fabricated and characterised diamond devices which were used for thermal neutron detection and for the intensity and shape measurement of VUV and soft X-ray pulses. (author)

  5. Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO2 thin films deposited by electron beam evaporation technique

    International Nuclear Information System (INIS)

    Mohanty, P.; Kabiraj, D.; Mandal, R.K.; Kulriya, P.K.; Sinha, A.S.K.; Rath, Chandana

    2014-01-01

    TiO 2 thin films deposited by electron beam evaporation technique annealed in either O 2 or Ar atmosphere showed ferromagnetism at room temperature. The pristine amorphous film demonstrates anatase phase after annealing under Ar/O 2 atmosphere. While the pristine film shows a super-paramagnetic behavior, both O 2 and Ar annealed films display hysteresis at 300 K. X-ray photo emission spectroscopy (XPS), Raman spectroscopy, Rutherford’s backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) were used to refute the possible role of impurities/contaminants in magnetic properties of the films. The saturation magnetization of the O 2 annealed film is found to be higher than the Ar annealed one. It is revealed from shifting of O 1s and Ti 2p core level spectra as well as from the enhancement of high binding energy component of O 1s spectra that the higher magnetic moment is associated with higher oxygen vacancies. In addition, O 2 annealed film demonstrates better crystallinity, uniform deposition and smoother surface than that of the Ar annealed one from glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM). We conclude that although ferromagnetism is due to oxygen vacancies, the higher magnetization in O 2 annealed film could be due to crystallinity, which has been observed earlier in Co doped TiO 2 film deposited by pulsed laser deposition (Mohanty et al., 2012 [10]). - Highlights: • TiO 2 films were deposited by e-beam evaporation technique and post annealed under O 2 /Ar at 500 °C. • The pristine film shows SPM behavior where as O 2 and Ar annealed films demonstrate RTFM. • The presence of magnetic impurities has been discarded by various characterization techniques. • The magnetic moment is found to be higher in O 2 annealed film than the Ar annealed one. • The higher M s in O 2 annealed film is attributed to oxygen vacancies as well as crystallinity

  6. OPTICAL PROPERTIES OF Al:ZnO THIN FILM DEPOSITED BY DIFFERENT SOL-GEL TECHNIQUES: ULTRASONIC SPRAY PYROLYSIS AND DIP-COATING

    Directory of Open Access Journals (Sweden)

    Ebru Gungor

    2016-08-01

    Full Text Available Undoped and Al-doped ZnO polycrystalline thin films have been fabricated on glass substrates by using a computer-controlled dip coating (DC and ultrasonic spray pyrolysis (USP systems. The film deposition parameters of DC process were optimized for the samples. In this technique, the substrate was exposed to temperature gradient using a tube furnace. In the study, the other solvent-based technique was conventional USP. The zinc salt and Al salt concentrations in the solution were kept constant as 0.1 M and 2% of Zn salt’s molarity, respectively. The optical properties were compared for the films deposited two different techniques. The optical transmission of Al:ZnO/Glass/Al:ZnO sample dip coated and  the optical transmission of Al:ZnO/Glass sample ultrasonically sprayed were determined higher than 80% in the visible and near infrared region. Experimental optical transmittance spectra of the films in the forms of FilmA/Glass/FilmA and FilmA/glass were used to determine the optical constants. It was observed that the optical band gaps of Al doped ZnO films onto glass substrate were increases with increase of Al content and the absorption edge shifted to the shorter wavelength (blue shift compared with the undoped ZnO thin film.

  7. Characterization of luminescent praseodymium-doped ZrO{sub 2} coatings deposited by ultrasonic spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Ramos-Brito, F [Laboratorio de Materiales Optoelectronicos, DiDe, Centro de Ciencias de Sinaloa, Av. De las Americas No. 2771 Nte. Col. Villa Universidad, C.P. 80010 Culiacan, Sinaloa (Mexico); Garcia-Hipolito, M [Departamento de Materiales Metalicos y Ceramicos, Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, AP 70-360 Coyoacan 04510 DF (Mexico); Alejo-Armenta, C [Laboratorio de Materiales Optoelectronicos, DiDe, Centro de Ciencias de Sinaloa, Av. De las Americas No. 2771 Nte. Col. Villa Universidad, C.P. 80010 Culiacan, Sinaloa (Mexico); Alvarez-Fragoso, O [Departamento de Materiales Metalicos y Ceramicos, Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, AP 70-360 Coyoacan 04510 DF (Mexico); Falcony, C [Departamento de Fisica, CINVESTAV-IPN, Apdo. Postal 14-740, 07000 DF (Mexico)

    2007-11-07

    ZrO{sub 2} : Pr films were synthesized by the ultrasonic spray pyrolysis process. X-ray diffraction studies, as a function of the deposition temperature, indicate a tetragonal crystal structure of zirconia as the substrate temperature was increased. Luminescence (photo- and cathodoluminescence) properties of the films were studied as a function of growth parameters such as the substrate temperature and the praseodymium concentration. For an excitation wavelength of 290 nm, all the photoluminescent emission spectra show peaks located at 490, 510, 566, 615, 642, 695, 718, 740 and 833 nm, associated with the electronic transitions {sup 3} P{sub 0} {yields} {sup 3}H{sub 4}, {sup 3}P{sub 0} {yields} {sup 3} H{sub 4}, {sup 3}P{sub 1} + {sup 1}I{sub 6} {yields} {sup 3}H{sub 5}, {sup 1}D{sub 2} {yields} {sup 3}H{sub 4}, {sup 3} P{sub 0} {yields} {sup 3}H{sub 6}, {sup 1}D{sub 2} {yields} {sup 3} H{sub 5}, {sup 1}D{sub 2} {yields} {sup 3}H{sub 5}, {sup 3} P{sub 0} {yields} {sup 3}F{sub 3,4} and {sup 1}D{sub 2} {yields} {sup 3} F{sub 2} of the Pr{sup 3+} ion. As the deposition temperature is increased, an increasing intensity of the luminescence emission is observed. Also, quenching of the luminescence, with increasing doping concentration, is observed. The chemical composition of the films as determined by energy dispersive spectroscopy is reported as well. In addition, the surface morphology characteristics of the films, as a function of the deposition temperature, are presented.

  8. Optical monitoring of surface processes relevant to thin film growth by chemical vapour deposition

    International Nuclear Information System (INIS)

    Simcock, Michael Neil

    2002-01-01

    This thesis reports on the investigation of the use of reflectance anisotropy spectroscopy (RAS) as an in-situ monitor for the preparation and oxidation of GaAs(100) c(4x4) surfaces using a CVD 2000 MOCVD reactor. These surfaces were oxidised using air. It was found that it was possible to follow surface degradation using RA transients at 2.6eV and 4eV. From this data it was possible to speculate on the nature of the surface oxidation process. A study was performed into the rate of surface degradation under different concentrations of air, it was found that the relation between the air concentration and the surface degradation was complicated but that the behaviour of the first third of the degradation approximated a first order behaviour. An estimation of the activation energy of the process was then made, and an assessment of the potential use of the glove-box for STM studies which is an integral part of the MOCVD equipment was also made. Following this, a description is given of the construction of an interferometer for monitoring thin film growth. An investigation is also described into two techniques designed to evaluate the changes in reflected intensity as measured by an interferometer. The first technique uses an iteration procedure to determine the film thickness from the reflection data. This is done using a Taylor series expansion of the thin film reflection function to iterate for the thickness. Problems were found with the iteration when applied to noisy data, these were solved by using a least squares fit to smooth the data. Problems were also found with the iteration at the turning points these were solved using the derivative of the function and by anticipating the position of the turning points. The second procedure uses the virtual interface method to determine the optical constants of the topmost deposited material, the virtual substrate, and the growth rate. This method is applied by using a Taylor series expansion of the thin film reflection

  9. Current transport and capacitance-voltage characteristics of an n-PbTe/p-GaP heterojunction prepared using the electron beam deposition technique

    Science.gov (United States)

    Nasr, Mahmoud; El Radaf, I. M.; Mansour, A. M.

    2018-04-01

    In this study, a crystalline n-PbTe/p-GaP heterojunction was fabricated using the electron beam deposition technique. The structural properties of the prepared heterojunction were examined by X-ray diffraction and scanning electron microscopy. The dark current-voltage characteristics of the heterojunction were investigated at different temperatures ranging from 298 to 398 K. The rectification factor, series resistance, shunt resistance, diode ideality factor, and effective barrier height (ϕb) were determined. The photovoltaic parameters were identified based on the current density-voltage characteristics under illumination. The capacitance-voltage characteristics showed that the junction was abrupt in nature.

  10. Evaporation-Driven Deposition of ITO Thin Films from Aqueous Solutions with Low-Speed Dip-Coating Technique.

    Science.gov (United States)

    Ito, Takashi; Uchiyama, Hiroaki; Kozuka, Hiromitsu

    2017-05-30

    We suggest a novel wet coating process for preparing indium tin oxide (ITO) films from simple solutions containing only metal salts and water via evaporation-driven film deposition during low-speed dip coating. Homogeneous ITO precursor films were deposited on silica glass substrates from the aqueous solutions containing In(NO 3 ) 3 ·3H 2 O and SnCl 4 ·5H 2 O by dip coating at substrate withdrawal speeds of 0.20-0.50 cm min -1 and then crystallized by the heat treatment at 500-800 °C for 10-60 min under N 2 gas flow of 0.5 L min -1 . The ITO films heated at 600 °C for 30 min had a high optical transparency in the visible range and a good electrical conductivity. Multiple-coating ITO films obtained with five-times dip coating exhibited the lowest sheet (ρ S ) and volume (ρ V ) resistivities of 188 Ω sq -1 and 4.23 × 10 -3 Ω cm, respectively.

  11. Chemical synthesis and characterization of CdSe thin films deposited by SILAR technique for optoelectronic applications

    Directory of Open Access Journals (Sweden)

    K.B. Chaudhari

    2016-12-01

    Full Text Available CdSe thin films were deposited on the glass substrate by successive ionic layer adsorption and reaction (SILAR method. Different sets of the film are prepared by changing the number of immersion cycles as 30, 40, 50 and 60. Further the effect of a number of immersion cycles on the characteristic structural, morphological, optical and electrical properties of the films are studied. The XRD studies revealed that the deposited films showed hexagonal structure with most prominent reflection along (1 0 1 plane. Moreover, the peak intensity of (1 0 1 plane is found to be increased as the number of immersion cycles is increased. All the thin films look relatively smooth and homogeneous covering the entire surface area in FESEM image. Optical properties of the CdSe thin films for a different number of immersion cycles were studied, which indicates that the absorbance increases with the increase in the immersion cycles. Furthermore, the optical band-gap in conjunction with the electrical resistivity was found to get decreased with increase in the immersion cycles. A good correlation between the number of immersion cycles and the physical properties indicates a simple method to manipulate the CdSe material properties for optoelectronic applications.

  12. Effect of Si ion irradiation on polycrystalline CdS thin film grown from novel photochemical deposition technique

    International Nuclear Information System (INIS)

    Soundeswaran, S.; Senthil Kumar, O.; Ramasamy, P.; Kabi Raj, D.; Avasthi, D.K.; Dhanasekaran, R.

    2005-01-01

    CdS thin films have been deposited from aqueous solution by photochemical reactions. The solution contains Cd(CH 3 COO) 2 and Na 2 S 2 O 3 , and pH is controlled in an acidic region by adding H 2 SO 4 . The solution is illuminated with light from a high-pressure mercury-arc lamp. CdS thin films are formed on a glass substrate by the heterogeneous nucleation and the deposited thin films have been subjected to high-energy Si ion irradiations. Si ion irradiation has been performed with an energy of 80 MeV at fluences of 1x10 11 , 1x10 12 , 1x10 13 and 1x10 14 ions/cm 2 using tandem pelletron accelerator. The irradiation-induced changes in CdS thin films are studied using XRD, Raman spectroscopy and photoluminescence. Broadening of the PL emission peak were observed with increasing irradiation fluence, which could be attributed to the band tailing effect of the Si ion irradiation. The lattice disorder takes place at high Si ion fluences

  13. Economical Atomic Layer Deposition

    Science.gov (United States)

    Wyman, Richard; Davis, Robert; Linford, Matthew

    2010-10-01

    Atomic Layer Deposition is a self limiting deposition process that can produce films at a user specified height. At BYU we have designed a low cost and automated atomic layer deposition system. We have used the system to deposit silicon dioxide at room temperature using silicon tetrachloride and tetramethyl orthosilicate. Basics of atomic layer deposition, the system set up, automation techniques and our system's characterization are discussed.

  14. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

    Directory of Open Access Journals (Sweden)

    Takeshi Aoki

    2015-08-01

    Full Text Available This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD, with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD. The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm−2 eV−1. Using a (111A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  15. Crystalline nanostructured Cu doped ZnO thin films grown at room temperature by pulsed laser deposition technique and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Drmosh, Qasem A. [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Rao, Saleem G.; Yamani, Zain H. [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gondal, Mohammed A., E-mail: magondal@kfupm.edu.sa [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

    2013-04-01

    We report structural and optical properties of Cu doped ZnO (ZnO:Cu) thin films deposited on glass substrate at room temperature by pulsed laser deposition (PLD) method without pre and post annealing contrary to all previous reports. For preparation of (ZnO:Cu) composites pure Zn and Cu targets in special geometrical arrangements were exposed to 248 nm radiations generated by KrF exciter laser. The laser energy was 200 mJ with 10 Hz frequency and 20 ns pulse width. The effect of Cu concentration on crystal structure, morphology, and optical properties were investigated by XRD, FESEM and photoluminescence spectrometer respectively. A systematic shift in ZnO (0 0 2) peak with Cu concentration observed in XRD spectra demonstrated that Cu ion has been incorporated in ZnO lattice. Uniform film with narrow size range grains were observed in FESEM images. The photoluminescence (PL) spectra measured at room temperature revealed a systematic red shift in ZnO emission peak and decrease in the band gap with the increase in Cu concentration. These results entail that PLD technique can be realized to deposit high quality crystalline ZnO and ZnO:Cu thin films without pre and post heat treatment which is normally practiced worldwide for such structures.

  16. The effect of thermal annealing on the optical band gap of cadmium sulphide thin films, prepared by the chemical bath deposition technique

    International Nuclear Information System (INIS)

    Ampong, F. K.; Boakye, F.; Asare Donkor, N. K.

    2010-01-01

    Cadmium sulphide thin films have been prepared by the chemical bath deposition technique (ph 11, 70 degree centigrade). Two different sets of films were prepared under varied conditions and concentrations of their ions sources (Cd 2+ from cadmium nitrate, S 2- from thiourea) and Na 2 EDTA as a complexing agent. A UV mini-Schimazu UV-VIS Spectrophotometer was used to determine the optical absorbance of the films as a function of wavelength at room temperature over the wavelength range 200 - 600 nm. The samples were then thermally annealed for thirty minutes, at temperatures of 100 degree centigrade, and 200 degree centigrade, after which the absorbance of the films were again recorded. The band gap values obtained for the sample with 0.5 M CdS as deposited, annealed at 100 degree centigrade and 200 degree centigrade were 2.1 eV, 2.2 eV and 2.3 eV respectively. Whilst the values obtained for the sample 0.15 CdS as deposited, annealed at 100 degree centigrade and annealed at 200 degree centigrade were 2.0 eV, 2.01 eV and 2.02 eV respectively. The increase in band gap with annealing temperature might be attributed to the improvement in crystallinity in the films. (au)

  17. Tribological Behavior of Thermal Spray Coatings, Deposited by HVOF and APS Techniques, and Composite Electrodeposits Ni/SiC at Both Room Temperature and 300 °C

    Directory of Open Access Journals (Sweden)

    A. Lanzutti

    2013-06-01

    Full Text Available The Both the thermal spray and the electroplating coatings are widely used because of their high wear resistance combined with good corrosion resistance. In particular the addition of both micro particles or nano‐particles to the electro deposited coatings could lead to an increase of the mechanical properties, caused by the change of the coating microstructure. The thermal spray coatings were deposited following industrial standards procedures, while the Ni/SiC composite coatings were produced at laboratory scale using both micro‐and nano‐sized ceramic particles. All the produced coatings were characterized regarding their microstructure,mechanical properties and the wear resistance. The tribological properties were analyzed using a tribometer under ball on disk configuration at both room temperature and 300oC. The results showed that the cermet thermal spray coatings have a high wear resistance, while the Ni nano‐composite showed good anti wear properties compared to the harder ceramic/cermet coatings deposited by thermal spray technique.

  18. Iridium Coating Deposited by Double Glow Plasma Technique — Effect of Glow Plasma on Structure of Coating at Single Substrate Edge

    International Nuclear Information System (INIS)

    Wu Wangping; Chen Zhaofeng; Liu Yong

    2012-01-01

    Double glow plasma technique has a high deposition rate for preparing iridium coating. However, the glow plasma can influence the structure of the coating at the single substrate edge. In this study, the iridium coating was prepared by double glow plasma on the surface of single niobium substrate. The microstructure of iridium coating at the substrate edge was observed by scanning electron microscopy. The composition of the coating was confirmed by energy dispersive spectroscopy and X-ray diffraction. There was a boundary between the coating and the substrate edge. The covered area for the iridium coating at the substrate edge became fewer and fewer from the inner area to the outer flange-area. The bamboo sprout-like particles on the surface of the substrate edge were composed of elemental niobium. The substrate edge was composed of the Nb coating and there was a transition zone between the Ir coating and the Nb coating. The interesting phenomenon of the substrate edge could be attributed to the effects of the bias voltages and the plasma cloud in the deposition chamber. The substrate edge effect could be mitigated or eliminated by adding lots of small niobium plates around the substrate in a deposition process. (plasma technology)

  19. The influence of charge effect on the growth of hydrogenated amorphous silicon by the hot-wire chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Q.; Nelson, B.P.; Iwaniczko, E.; Mahan, A.H.; Crandall, R.S.; Benner, J. [National Renewable Energy Lab., Golden, CO (United States)

    1998-09-01

    The authors observe at lower substrate temperatures that the scatter in the dark conductivity on hydrogenated amorphous silicon (a-Si:H) films grown on insulating substrates (e.g., Corning 7059 glass) by the hot-wire chemical vapor deposition technique (HWCVD) can be five orders of magnitude or more. This is especially true at deposition temperatures below 350 C. However, when the authors grow the same materials on substrates with a conductive grid, virtually all of their films have acceptable dark conductivity (< 5 {times} 10{sup {minus}10} S/cm) at all deposition temperatures below 425 C. This is in contrast to only about 20% of the materials grown in this same temperature range on insulating substrates having an acceptable dark conductivity. The authors estimated an average energy of 5 eV electrons reaching the growing surface in vacuum, and did additional experiments to see the influence of both the electron flux and the energy of the electrons on the film growth. Although these effects do not seem to be important for growing a-Si:H by HWCVD on conductive substrates, they help better understand the important parameters for a-Si:H growth, and thus, to optimize these parameters in other applications of HWCVD technology.

  20. Electrical characterization of Ni/n-ZnO/p-Si/Al heterostructure fabricated by pulsed laser deposition technique

    International Nuclear Information System (INIS)

    Chand, Subhash; Kumar, Rajender

    2014-01-01

    Highlights: • The Ni/n-ZnO/p-Si/Al heterojunction diodes are fabricated by pulsed laser deposition. • The band gap of the deposit ZnO films was found to be 3.43 eV. • Forward I–V data of Ni/n-ZnO/p-Si/Al hetrojunction are interpreted in terms of thermionic emission–diffusion mechanism. • The C–V characteristics of the Ni/n-ZnO/p-Si/Al hetrojunction diode are measured in the temperature range 80–300 K. • The barrier height of Ni/n-ZnO/p-Si/Al hetrojunction diode is also calculated from C–V measurements. - Abstract: The ZnO thin films are grown on the p-Si for the heterojunction fabrication by pulsed laser deposition method. X-ray diffraction study showed that the texture of the film is hexagonal with a strong (0 0 2) plane as preferred direction. High purity vacuum evaporated nickel and aluminum metals were used to make contacts to the n-ZnO and p-Si, respectively. The current–voltage characteristics of Ni/n-ZnO/p-Si(1 0 0)/Al hetero structure measured over the temperature range 80–300 K have been studied on the basis of thermionic emission diffusion mechanism. The equivalent Schottky barrier height and diode ideality factor are determined by fitting of measured current–voltage data in to thermionic diffusion equation. It is observed that the barrier height decreases and the ideality factor increases with decrease of temperature and the activation energy plot exhibit non-linear behavior. These characteristics are attributed to the Gaussian distribution of barrier heights. The capacitance–voltage characteristics of Ni/n-ZnO/p-Si(1 0 0)/Al heterojunction diode are also studied over wide temperature range. From the measured capacitance–voltage data the built in voltage and impurity concentration in n-type ZnO is estimated

  1. Experimental study of structural and optical properties of integrated MOCVD GaAs/Si(001) heterostructures

    Science.gov (United States)

    Seredin, P. V.; Lenshin, A. S.; Zolotukhin, D. S.; Arsentyev, I. N.; Nikolaev, D. N.; Zhabotinskiy, A. V.

    2018-02-01

    This is the first report of the control of the structural and optical functional characteristics of integrated GaAs/Si(001) heterostructures due to the use of misoriented Si(001) substrates with protoporous sublayer. The growth of the epitaxial GaAs layer on silicon substrates without formation of the antiphase domains can be performed on substrates deviating less than 4°-6° from the singular (001) plane or without the use of a transition layer of GaAs nano-columns. Preliminary etching of the silicon substrate with protoporous Si sublayer formation facilitated the acquisition of an epitaxial GaAs film in a single-crystalline state with a considerably less residual strain factor using MOCVD, which has a positive effect on the structural quality of the film. These data are in a good agreement with the results of IR reflection spectroscopy as well as PL and UV spectroscopy. The optical properties of the integrated GaAs/Si (001) heterostructures in the IR and UV spectral regions were also determined by the residual strain value.

  2. Wurtzite InP nanowire arrays grown by selective area MOCVD

    International Nuclear Information System (INIS)

    Chu, Hyung-Joon; Stewart, Lawrence; Yeh, Ting-Wei; Dapkus, P.D.

    2010-01-01

    InP nanowires are a unique material phase because this normally zincblende material forms in the wurtzite crystal structure below a critical diameter owing to the contribution of sidewalls to the total formation energy. This may allow control of the carrier transport and optical properties of InP nanowires for applications such as nano scale transistors, lasers and detectors. In this work, we describe the fabrication of InP nanowire arrays by selective area growth using MOCVD in the diameter range where the wurtzite structure is formed. The spatial growth rate in selective area growth is modeled by a diffusion model for the precursors. The proposed model achieves an average error of 9%. Electron microscopy shows that the grown InP nanowires are in the wurtzite crystal phase with many stacking faults. The threshold diameter of the crystal phase transition of InP nanowires is larger than the thermodynamic estimation. In order to explain this tendency, we propose a surface kinetics model based on a 2 x 2 reconstruction. This model can explain the increased tendency for wurtzite nanowire formation on InP (111)A substrates and the preferred growth direction of binary III-V compound semiconductor nanowires. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Integrated MSM-FET photoreceiver fabricated on MOCVD grown Hg2-xCdxTe

    International Nuclear Information System (INIS)

    Leech, P.W.; Gwynn, P.J.; Pain, G.N.; Petkovic, N.R.; Thompson, J.; Jamieson, D.N.

    1991-01-01

    This paper reports on progress in the monolithic integration of a metal-semiconductor-metal (MSM) detector and transimpedance amplifier and of a photoconductive detector (PCD) with a metal-semiconductor field effect transistor (MESFET) in Hg 1-x Cd x Te. The layers of CdTe/n-type Hg 1-x Cd x Te were grown by MOCVD on semi-insulating GaAs substrates (2 0 misoriented 100). Fabrication of the devices was by an FET planar process; with a standard lift-off used to form Schottky metallization on both the interdigitated electrodes of the MSM detector (2 μm width, 2 μm spacing) and the gate of the MESFETs (5μm length, 100μm width). The MSM photodetectors exhibited breakdown voltages in the range 60 to 80V, a dark current of 10na at 5V bias, and responsivities of >1.0 A/W measured at 40V using CW 1.3 μm illumination

  4. Study on methods and techniques of aeroradiometric weak information extraction for sandstone-hosted uranium deposits based on GIS

    International Nuclear Information System (INIS)

    Han Shaoyang; Ke Dan; Hou Huiqun

    2005-01-01

    The weak information extraction is one of the important research contents in the current sandstone-type uranium prospecting in China. This paper introduces the connotation of aeroradiometric weak information extraction, and discusses the formation theories of aeroradiometric weak information extraction, and discusses the formation theories of aeroradiometric weak information and establishes some effective mathematic models for weak information extraction. Models for weak information extraction are realized based on GIS software platform. Application tests of weak information extraction are realized based on GIS software platform. Application tests of weak information extraction are completed in known uranium mineralized areas. Research results prove that the prospective areas of sandstone-type uranium deposits can be rapidly delineated by extracting aeroradiometric weak information. (authors)

  5. Effects of temperature, pressure and pure copper added to source material on the CuGaTe{sub 2} deposition using close spaced vapor transport technique

    Energy Technology Data Exchange (ETDEWEB)

    Abounachit, O. [LP2M2E, Faculté des Sciences et Techniques, Université Cadi Ayyad, Gueliz, BP 549 , Marrakech, Maroc (Morocco); Chehouani, H., E-mail: chehouani@hotmail.fr [LP2M2E, Faculté des Sciences et Techniques, Université Cadi Ayyad, Gueliz, BP 549 , Marrakech, Maroc (Morocco); Djessas, K. [CNRS-PROMES Tecnosud, Rambla de la Thermodynamique, 66100 Perpignan (France)

    2013-07-01

    The quality of CuGaTe{sub 2} (CGT) thin films elaborated by close spaced vapor transport technique has been studied as a function of the source temperature (T{sub S}), iodine pressure (P{sub I2}) and the amount (X{sub Cu}) of pure copper added to the stoichiometric starting material. A thermodynamic model was developed for the Cu–Ga–Te–I system to describe the CGT deposition. The model predicts the solid phase composition with possible impurities for the operating conditions previously mentioned. The conditions of stoichiometric and near-stoichiometric deposition were determined. The value of T{sub S} must range from 450 to 550 °C for P{sub I2} varying between 0.2 and 7 kPa. Adding an amount up to 10% of pure copper to the starting material improves the quality of the deposit layers and lowers the operating interval temperature to 325–550 °C. These optimal conditions were tested experimentally at 480 °C and 500 °C. The X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy have proved that the addition of pure copper to the stoichiometric source material can be considered as a supplementary operating parameter to improve the quality of CGT thin films. - Highlights: • The stoichiometric CuGaTe{sub 2} (CGT) has been deposited by close spaced vapor transport. • The Cu–Ga–Te–I system has been studied theoretically by minimizing the Gibbs energy. • The quality of thin films has been improved by pure copper added to the source CGT. • The temperature, pressure and the amount of copper added to grow CGT are determined. • The thermodynamic predictions are in good agreement with experimental results.

  6. Synthesis and self-assembly of dumbbell shaped ZnO sub-micron structures using low temperature chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Borade, P. [National Centre for Nanoscience and Nanotechnology, University of Mumbai, Kalina Campus, Santacruz (E), Mumbai 400098 (India); Joshi, K.U. [Anton-Paar India Pvt. Ltd., Thane (W), 400607 (India); Gokarna, A.; Lerondel, G. [Laboratoire de Nanotechnologie et D' Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 Rue Marie Curie, BP 2060, 10010 Troyes (France); Walke, P. [National Centre for Nanoscience and Nanotechnology, University of Mumbai, Kalina Campus, Santacruz (E), Mumbai 400098 (India); Late, D. [National Chemical Laboratory (NCL), Pune 400027 (India); Jejurikar, S.M., E-mail: jejusuhas@gmail.com [National Centre for Nanoscience and Nanotechnology, University of Mumbai, Kalina Campus, Santacruz (E), Mumbai 400098 (India)

    2016-02-01

    We report well dispersed horizontal growth of ZnO sub-micron structures using simplest technique ever known i.e. chemical bath deposition (CBD). A set of samples were prepared under two different cases A) dumbbell shaped ZnO grown in CBD bath and B) tubular ZnO structures evolved from dumbbell shaped structures by dissolution mechanism. Single phase wurtzite ZnO formation is confirmed using X-ray diffraction (XRD) technique in both cases. From the morphological investigations performed using scanning electron microscopy (SEM), sample prepared under case A indicate formation of hex bit tool (HBT) shaped ZnO crystals, which observed to self-organize to form dumbbell structures. Further these microstructures are then converted into tubular structures as a fragment of post CBD process. The possible mechanism responsible for the self-assembly of HBT units to form dumbbell structures is discussed. Observed free excitonic peak located at 370 nm in photoluminescence (PL) spectra recorded at 18 K indicate that the micro/nanostructures synthesized using CBD are of high optical quality. - Highlights: • Controlled growth of Dumbbell shaped ZnO using Chemical Bath Deposition (CBD). • Growth mechanism of dumbbell shaped ZnO by self-assembling was discussed. • Quick Transformation of ZnO dumbbell structures in to tubular structures by dissolution. • Sharp UV Emission at 370 nm from both dumbbell and tubular structures.

  7. Structural properties of perovskite films on zinc oxide nanoparticles-reduced graphene oxide (ZnO-NPs/rGO) prepared by electrophoretic deposition technique

    Science.gov (United States)

    Bahtiar, Ayi; Nurazizah, Euis Siti; Latiffah, Efa; Risdiana, Furukawa, Yukio

    2018-02-01

    Perovskite solar cells highly believed as next generation solar cells to replace currently available inorganic silicon solar cells due to their high power conversion efficiency and easy processing to thin films using solution processing techniques. Performance and stability, however still need to be improved for mass production and widely used for public electricity generation. Perovskite solar cells are commonly deposited on Titanium Dioxide (TiO2) film as an effective electron transport layer (ETL). We used Zinc Oxide nanoparticles (ZnO-NPs) as ETL in perovskite solar cells due to the low temperature required for crystallization and can be formed into different shapes of nanostructures. However, perovskite film can easily degrade into insulating lead iodide due to deprotonation of the methylammoniumcation at the surface of ZnO-NPs, in particular when it stored in ambient air with high relative humidity. The degradation of perovskite layer is therefore needed to be overcome. Here, we capped ZnO-NPs with reduced graphene oxide (rGO) to overcome the degradation of perovskite film where ZnO-NPs is synthesized by sol-gel method. The average nanoparticle size of ZnO is 15 nm. ZnO-NPs and ZnO-NPs-rGO films are prepared using electrophoretic deposition technique, which can produce large area with good homogeneity and high reproducibility. The stability of perovskite layer can significantly be improved by capping ZnO with rGO, which is indicated by absence of color change of perovskite after storage for 5 (five) days in ambient air with relative humidity above 95%. Moreover, the X-Ray Diffaction peaks of perovskite film are more preserved when deposited on ZnO/rGO film than using only ZnO film. We strongly believe, by capping ZnO film with rGO, both the performance and stability of perovskite solar cells can be improved significantly.

  8. Coupling spectroscopic and chromatographic techniques for evaluation of the depositional history of hydrocarbons in a subtropical estuary

    International Nuclear Information System (INIS)

    Martins, César C.; Doumer, Marta E.; Gallice, Wellington C.; Dauner, Ana Lúcia L.; Cabral, Ana Caroline; Cardoso, Fernanda D.

    2015-01-01

    Spectroscopic and chromatographic techniques can be used together to evaluate hydrocarbon inputs to coastal environments such as the Paranaguá estuarine system (PES), located in the SW Atlantic, Brazil. Historical inputs of aliphatic hydrocarbons (AHs) and polycyclic aromatic hydrocarbons (PAHs) were analyzed using two sediment cores from the PES. The AHs were related to the presence of biogenic organic matter and degraded oil residues. The PAHs were associated with mixed sources. The highest hydrocarbon concentrations were related to oil spills, while relatively low levels could be attributed to the decrease in oil usage during the global oil crisis. The results of electron paramagnetic resonance were in agreement with the absolute AHs and PAHs concentrations measured by chromatographic techniques, while near-infrared spectroscopy results were consistent with unresolved complex mixture (UCM)/total n-alkanes ratios. These findings suggest that the use of a combination of techniques can increase the accuracy of assessment of contamination in sediments. - Highlights: • Historical inputs of hydrocarbons in a subtropical estuary were evaluated. • Spectroscopic and chromatographic methods were used in combination. • High hydrocarbon concentrations were related to anthropogenic activities. • Low hydrocarbon levels could be explained by the 1970s global oil crisis. - Spectroscopic and chromatographic techniques could be used together to evaluate hydrocarbon inputs to coastal environments

  9. Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures

    International Nuclear Information System (INIS)

    Gaubas, E.; Pobedinskas, P.; Vaitkus, J.; Uleckas, A.; Zukauskas, A.; Blue, A.; Rahman, M.; Smith, K.M.; Aujol, E.; Beaumont, B.; Faurie, J.-P.; Gibart, P.

    2005-01-01

    The effect of native and radiation induced defects on the photoconductivity transients and photoluminescence spectra have been examined in GaN epitaxial layers of 2.5 and 12μm thickness grown on bulk n-GaN/sapphire substrates by metal-organic chemical vapor deposition (MOCVD). For comparison, free-standing GaN as-grown samples of 500μm thickness, fabricated by hydride vapor phase epitaxy (HVPE), were investigated. Manifestation of defects induced by 10-keV X-ray irradiation with the dose of 600Mrad and 100-keV neutrons with the fluences of 5x10 14 and 10 16 cm -2 as well as of 24GeV/c protons with fluence 10 16 cm -2 have been revealed through contact photoconductivity and microwave absorption transients. The amplitude of the initial photoconductivity decay is significantly reduced by the native and radiation defects density. Synchronous decrease of the steady-state PL intensity of yellow, blue and ultraviolet bands peaked at 2.18, 2.85, and 3.42eV, respectively, with density of radiation-induced defects is observed. The decrease of the PL intensity is accompanied by an increase of asymptotic decay lifetime in the photoconductivity transients, which is due to excess-carrier multi-trapping. The decay fits the stretched exponent approximation exp[-(t/τ) α ] with the different factors α in as-grown material (α∼0.7) and irradiated samples (α∼0.3). The fracton dimension d s of disordered structure changes from 4.7 to 0.86 for as-grown and irradiated material, respectively, and it implies the percolative carrier motion on an infinite cluster of dislocations net in the as-grown material and cluster fragmentation into finite fractons after irradiations

  10. Optimization of Process Parameters of Pulsed Electro Deposition Technique for Nanocrystalline Nickel Coating Using Gray Relational Analysis (GRA)

    Science.gov (United States)

    Venkatesh, C.; Sundara Moorthy, N.; Venkatesan, R.; Aswinprasad, V.

    The moving parts of any mechanism and machine parts are always subjected to a significant wear due to the development of friction. It is an utmost important aspect to address the wear problems in present environment. But the complexity goes on increasing to replace the worn out parts if they are very precise. Technology advancement in surface engineering ensures the minimum surface wear with the introduction of polycrystalline nano nickel coating. The enhanced tribological property of the nano nickel coating was achieved by the development of grain size and hardness of the surface. In this study, it has been decided to focus on the optimized parameters of the pulsed electro deposition to develop such a coating. Taguchi’s method coupled gray relational analysis was employed by considering the pulse frequency, average current density and duty cycle as the chief process parameters. The grain size and hardness were considered as responses. Totally, nine experiments were conducted as per L9 design of experiment. Additionally, response graph method has been applied to determine the most significant parameter to influence both the responses. In order to improve the degree of validation, confirmation test and predicted gray grade were carried out with the optimized parameters. It has been observed that there was significant improvement in gray grade for the optimal parameters.

  11. Effect of annealing temperature on electrical properties of poly (methyl methacrylate): titanium dioxide nanocomposite films using spin coating deposition technique

    International Nuclear Information System (INIS)

    Ismail, L N; Habibah, Z; Herman, S H; Rusop, M

    2014-01-01

    Nanocomposite poly (methyl methacrylate) :titanium dioxide (PMMA :TiO 2 ) film were deposited on glass substrate. The effect of annealing temperature, especially on electrical, dielectric and the morphological properties of the thin films were investigated by current-voltage (I-V) measurement, impedance spectroscopy, and FESEM. The annealing temperature is varies from 120°C, 140°C, 160°C, 180°C and 200°C. The electrical properties results showing when nanocomposite film annealed at '20°C produce the lowest current. Meanwhile, when the annealing temperature increased, the current increased drastically and this indicates the PMMA:TiO 2 nanocomposite film are no longer having insulating properties. The dielectric properties also indicate that film annealed at 120°C has the best dielectric properties compared to other temperature. The FESEM results show that as the temperature increased, the PMMA:TiO 2 nanocomposite film started to create a phase separation between the PMMA matrix and TiO 2 nanoparticles

  12. Atmospheric depositions of rare earth elements in Albania studied by the moss biomonitoring technique, neutron activation analysis and GIS technology

    International Nuclear Information System (INIS)

    Allajbeu, Sh.; Lazo, P.; Yushin, N.S.; Frontasyeva, M.V.; Qarri, F.; Duliu, O.G.

    2015-01-01

    Rare earth elements (REE) are conservative elements, scarcely derived from anthropogenic sources. The mobilization of REE in the environment requires their monitoring in environmental matrices, where they are mainly present at trace levels. The results on determination of the content of 11 elements by epithermal neutron activation analysis (ENAA) at the IBR-2 reactor in Dubna in carpet-forming moss species Hypnum cupressiforme collected from 44 sampling sites over the whole Albanian territory are presented and discussed. The paper is focused on Sc and lanthanides, as well as Fe and Th, the last ones showing correlations with the investigated REE. With the exception of Fe, all other elements were never determined in the air deposition of Albania. The STATISTICA"T"M 10 software was used for data analysis. The median values for the content of elements under investigation were compared to those in Bulgaria, Macedonia, Romania and Serbia, as well as Norway selected as a pristine area. Therefore, it was shown that the accumulation of REE in mosses is associated with the wind blown metal-enriched soils that are pointed out as the main emitting factor. [ru

  13. Fabricating a pearl/PLGA composite scaffold by the low-temperature deposition manufacturing technique for bone tissue engineering

    International Nuclear Information System (INIS)

    Xu Mingen; Li Yanlei; Suo Hairui; Wang Qiujun; Ge Yakun; Xu Ying; Yan Yongnian; Liu Li

    2010-01-01

    Here we developed a composite scaffold of pearl/poly(lactic-co-glycolic acid) (pearl/PLGA) utilizing the low-temperature deposition manufacturing (LDM). LDM makes it possible to fabricate scaffolds with designed microstructure and macrostructure, while keeping the bioactivity of biomaterials by working at a low temperature. Process optimization was carried out to fabricate a mixture of pearl powder, PLGA and 1,4-dioxane with the designed hierarchical structures, and freeze-dried at a temperature of -40 deg. C. Scaffolds with square and designated bone shape were fabricated by following the 3D model. Marrow stem cells (MSCs) were seeded on the pearl/PLGA scaffold and then cultured in a rotating cell culture system. The adhesion, proliferation and differentiation of MSCs into osteoblasts were determined using scanning electronic microscopy, WST-1 assay, alkaline phosphatase activity assay, immunofluorescence staining and real-time reverse transcription polymerase chain reaction. The results showed that the composite scaffold had high porosity (81.98 ± 3.75%), proper pore size (micropores: <10 μm; macropore: 495 ± 54 μm) and mechanical property (compressive strength: 0.81 ± 0.04 MPa; elastic modulus: 23.14 ± 0.75 MPa). The pearl/PLGA scaffolds exhibited better biocompatibility and osteoconductivity compared with the tricalcium phosphate/PLGA scaffold. All these results indicate that the pearl/PLGA scaffolds fulfill the basic requirements of bone tissue engineering scaffold.

  14. Technique for controllable vapor-phase deposition of 1-nitro(14C)pyrene and other polycyclic aromatic hydrocarbons onto environmental particulate matter

    International Nuclear Information System (INIS)

    Lucas, S.V.; Lee, K.W.; Melton, C.W.; Lewtas, J.; Ball, L.M.

    1991-01-01

    To produce environmental particles fortified with a polycyclic aromatic hydrocarbon (PAH) for toxicology studies, an experimental apparatus was devised for deposition of the desired chemical species onto particles in a controlled and reproducible manner. The technique utilized consists of dispersion of the particles on a gaseous stream at a controlled rate, thermal vaporization of a solution of PAH, delivery of the vaporized PAH into the aerosol of particles at a controlled rate, subsequent condensation of the PAH onto the particles, and final recovery of the coated particles. The effectiveness of this approach was demonstrated by vapor-coating a 14 C-labeled PAH (1-nitro( 14 C)-pyrene) onto diesel engine exhaust particles that had previously been collected by tunnel dilution sampling techniques. Using the 14 C label as a tracer, the coated particles were characterized with respect to degree of coating, integrity of particle structure and absence of chemical decomposition of the coating substrate. The study demonstrates that the described method provides a controllable means for depositing a substance uniformly and with a high coating efficiency onto aerosolized particles. The technique was also used to vapor-coat benzo(a)pyrene onto diesel engine exhaust and urban ambient air particulate matter, and 2-nitrofluoranthene onto urban ambient air particulate matter. Coating efficiencies of about 400 micrograms/g particulate matter were routinely obtained on a single coating run, and up to 1200 micrograms/g (1200 ppm) were achieved after a second pass through the process. The coated particles were subsequently utilized in biological fate, distribution and metabolism studies

  15. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process.

    Science.gov (United States)

    Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

    2015-07-01

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga0.97N0.9O0.09 is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga0.97N0.9O0.09 of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4M HCl, 100°C and pulp density of 100 kg/m(3,) respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. Copyright © 2015 Elsevier Inc. All rights reserved.

  16. Atmospheric deposition of trace metals in Romania studied by the moss biomonitoring technique using NAA and AAS

    International Nuclear Information System (INIS)

    Lucaciu, A.; Timofte, L.; Vata, I.; Frontasyeva, M. V.; Oprea, C. D.; Culicov, O. A.; Steinnes, E.

    2003-01-01

    To characterize atmospheric deposition of trace elements in Romania, moss samples of Hylocomium splendens, Pleurozium schreberi and Hypnum cupressiforme were collected at 272 network sites (20 x 20 km) and in different years between 1995 and 2000. Instrumental neutron activation analysis (INAA) has been used for determination of 37 major, minor and trace elements (e.g. Na, Mg, Al, Cl, K, Ca, Sc, V, Cr, Mn, Fe, Co, Ni, Zn, As, Se, Br, Rb, Sr, Zr, Mo, Ag, Sb, I, Cs, Ba, La, Ce, Sm, Tb, Yb, Hf, Ta, W, Au, Th and U) in moss samples. Copper, cadmium and lead were determined by flame atomic absorption spectrometry (FAAS). In order to identify the sources of air pollution in Romania, the principal component analysis was applied on the overall data set, as well as on each data set. At least 74% of the total variance in data sets could be explained by four to six principal components, including soil dust, general pollution, sea-salt, foliar leaching and local point source categories. The highest concentrations of trace metals related to industrial activities were found in Transilvania Plateau (Cr, Fe, Co, Ni Cu, Zn As, Se, Mo, Ag, Cd, Sb, Ba, W and U) and in the South of Romania (Ni). Crustal enrichment factors, based on scandium, decrease in the order: Cd, Se, Sb, Pb, I, Cl, Br, Au, Ag, Zn, As, Cu, W, Mn, Zr, Hf, Mo, K, Rb, Ba, Cs, Ca, U, Mg, Th, Ce, La, Tb, Sm, Cr, Sr, Al, Ta, V, Yb, Fe, Ni, Co and Na. Comparison of the data from different surveyed regions revealed the differences in concentrations of air toxic elements related to specific industrial activities concerned. The trace metal levels in Romania were similar to those found by the other East-European countries participating in 2000 European moss survey, but significantly higher compared with Norway. (authors)

  17. Noninvasive radioisotopic technique for detection of platelet deposition in mitral valve prosthesis and renal microembolism in dogs

    International Nuclear Information System (INIS)

    Dewanjee, M.K.; Kaye, M.P.; Fuster, V.; Rao, S.A.

    1980-01-01

    At 24 hrs after implantation of Bjoerk-Shiley mitral prosthesis in 5 dogs, in vivo images were obtained with a gamma camera after intravenous administration (0.5-0.6 mCi) one hour postoperatively of autologous Indium-111-labeled platelets. The site of platelet deposition in the teflon ring and perivascular damaged cardiac tissue is clearly delineated in the scintiphoto. In vitro biodistribution (mean % +/- SD of injected dose) at 24 hrs after injection of the 5 implanted and 7 normal dogs performed with a gamma counter demonstrated that (45.1 +/- 10.6)% and (0.7 +/- 0.4)% were in blood and kidneys in normal dogs and (28.5 +/- 6.8)%, (1.6 +/- 0.6)%, (0.3 +/- 0.1)%, and (0.2 +/- 0.1)% were in blood, kidneys, teflon rings, and perivascular damaged cardiac tissue, respectively. The strut and pyrolytic carbon-coated disc retained only (0.0033 +/- 0.0004)% and (0.0031 +/- 0.0003)%, respectively. There was a 2.3-fold increase of labeled platelets in kidneys of implanted dogs due to renal trapping of microembolism. Also, three- to fivefold increase in ratios of lung, brain, cardiac, and skeletal muscle to blood indicates that internal organs and whole body work as filter for microembolism generated by cardiovascular surgery and mitral prosthesis. Twenty percent of the administered platelets are consumed in surgical repair of damaged tissue. Indium-111-labeled platelets thus provide a sensitive marker for noninvasive imaging of Bjoerk-Shiley mitral prosthesis, thromboembolism after implantation of prosthetic device, and in vitro quantitation of surgical consumption

  18. Properties of recent IBAD-MOCVD Coated Conductors relevant to their high field, low temperature magnet use

    OpenAIRE

    Braccini, V; Xu, A; Jaroszynski, J; Xin, Y; Larbalestier, D C; Chen, Y; Carota, G; Dackow, J; Kesgin, I; Yao, Y; Guevara, A; Shi, T; Selvamanickam, V

    2010-01-01

    BaZrO3 (BZO) nanorods are now incorporated into production IBAD-MOCVD coated conductors. Here we compare several examples of both BZO-free and BZO-containing coated conductors using critical current (Ic) characterizations at 4.2 K over their full angular range up to fields of 31 T. We find that BZO nanorods do not produce any c-axis distortion of the critical current density Jc(theta) curve at 4.2 K at any field, but also that pinning is nevertheless strongly enhanced compared to the non-BZO ...

  19. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

    OpenAIRE

    Monemar, Bo; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Lindgren, David; Samuelson, Lars; Ni, Xianfeng; Morkoç, Hadis; Paskova, Tanya; Bi, Zhaoxia; Ohlsson, Jonas

    2011-01-01

    Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependenc...

  20. Application of Fractal Technique for Analysis of Geophysical - Geochemical Databases in Tekieh Pb-Zn Ore Deposit (SE of Arak)

    International Nuclear Information System (INIS)

    Mehrnia, S.R.

    2017-01-01

    In this research, two statistical techniques that consist of classical and fractal equations (Mandelbrot, 2005) were applied in geochemical (Torkashvand et al., 2009) and geophysical (Jafari, 2007) databases for obtaining the linear and nonlinear distributions of geochemical elements (Tekieh Pb-Zn content) in association with resistivity variations and induction polarization measurements (Calagari, 2010). According to linear statistical techniques (Torkashvand et al., 2009), the main central parameters such as mean, median and mode in addition to variances and standard deviations as distribution tendencies could be used for obtaining the regression coefficients of the databases. However, in fractal statistics, a reliable regression between geo electrical - geochemical anomalies should be calculated based on measuring the fractal dimensional variations in the recursive patterns (Mehrnia, 2013). In practice, the Area-Concentration equations (Mandelbrot, 2005) were applied in resistivity, induction polarization, Pb and Zn datasets for achieving the nonlinear relationships in anomalous regions which were characterized by increasing in regression coefficients with more spatial correlation of the variable than linear statistics (Mehrnia, 2013).

  1. Sn and Cu oxide nanoparticles deposited on TiO{sub 2} nanoflower 3D substrates by Inert Gas Condensation technique

    Energy Technology Data Exchange (ETDEWEB)

    Kusior, A., E-mail: akusior@agh.edu.pl [Faculty of Materials Science and Ceramics, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow (Poland); Kollbek, K. [Academic Centre for Materials and Nanotechnology, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow (Poland); Kowalski, K. [Faculty of Metals Engineering and Industrial Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow (Poland); Borysiewicz, M. [Institute of Electron Technology, al. Lotnikow 32/46, 02-668 Warszawa (Poland); Wojciechowski, T. [Institute of Physics Polish Academy of Science, al. Lotnikow 32/46, 02-668 Warszawa (Poland); Adamczyk, A.; Trenczek-Zajac, A.; Radecka, M. [Faculty of Materials Science and Ceramics, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow (Poland); Zakrzewska, K. [Faculty of Computer Science, Electronics and Telecommunications, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow (Poland)

    2016-09-01

    Graphical abstract: - Highlights: • Inert Gas Condensation method yields non-agglomerated nanoparticles. • The growth of nanoparticles is controllable at the level of deposition. • Electrical conductivity increases with respect to pure nanostructured TiO{sub 2}. - Abstract: Sn and Cu oxide nanoparticles were deposited by Inert Gas Condensation (IGC) technique combined with dc magnetron sputtering onto nanoflower TiO{sub 2} 3D substrates obtained in the oxidation process of Ti-foil in 30% H{sub 2}O{sub 2}. Sputtering parameters such as insertion length and Ar/He flow rates were optimized taking into account the nanostructure morphology. Comparative studies with hydrothermal method were carried out. Surface properties of the synthesized nanomaterials were studied by Scanning Electron Microscopy, SEM, Atomic Force Microscopy, AFM, and X-ray Photoelectron Spectroscopy, XPS. X-ray diffraction, XRD and Raman spectroscopy were performed in order to determine phase composition. Impedance spectroscopy demonstrated the influence of nanoparticles on the electrical conductivity.

  2. Effect of complexing agent TEA: The structural, morphological, topographical and optical properties of FexSx nano thin films deposited by SILAR technique

    International Nuclear Information System (INIS)

    Manikandan, K.; Mani, P.; Surendra Dilip, C.; Valli, S.; Fermi Hilbert Inbaraj, P.; Joseph Prince, J.

    2014-01-01

    Iron sulfide thin films (Fe x S x ) (x = 0.05 M, 0.10 M, 0.15 M, 0.20 M and 0.25 M) were deposited by SILAR method from equimolar and equivolume aqueous solutions of ferrous nitrate and sodium sulfide with the addition of complexing agent TEA. The structural, morphological and optical characteristics of the films were derived from X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV–vis spectral techniques. The mixed characteristics (crystalline and amorphous) of the deposited films and the increasing crystalline qualities with the concentrations were understood from the XRD analysis. The grain sizes and roughness of the films were decreases with the increasing concentration and also at the higher concentration films are shown by the same images presence of hexagonal like crystallite structure. The influence of complexing agent TEA on the surface roughness and morphological properties are confirmed by the atomic force microscope (AFM) results. The effect of increasing substrate concentration on the absorption and transmission measurements and its impact on the optical band-gap energy were enumerated from the UV–vis analysis.

  3. Effect of complexing agent TEA: The structural, morphological, topographical and optical properties of Fe{sub x}S{sub x} nano thin films deposited by SILAR technique

    Energy Technology Data Exchange (ETDEWEB)

    Manikandan, K., E-mail: 1984manikandan@gmail.com [Department of Physics, Anna University BIT Campus, Tiruchirappalli 620 024, Tamilnadu (India); Mani, P. [Department of Physics, Anna University BIT Campus, Tiruchirappalli 620 024, Tamilnadu (India); Surendra Dilip, C. [Department of Chemistry, Anna University BIT Campus, Tiruchirappalli 620 024, Tamilnadu (India); Valli, S. [Department of Physics, M.I.E.T. Arts and Science College, Tiruchirappalli 620 007, Tamilnadu (India); Fermi Hilbert Inbaraj, P.; Joseph Prince, J. [Department of Physics, Anna University BIT Campus, Tiruchirappalli 620 024, Tamilnadu (India)

    2014-01-01

    Iron sulfide thin films (Fe{sub x}S{sub x}) (x = 0.05 M, 0.10 M, 0.15 M, 0.20 M and 0.25 M) were deposited by SILAR method from equimolar and equivolume aqueous solutions of ferrous nitrate and sodium sulfide with the addition of complexing agent TEA. The structural, morphological and optical characteristics of the films were derived from X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV–vis spectral techniques. The mixed characteristics (crystalline and amorphous) of the deposited films and the increasing crystalline qualities with the concentrations were understood from the XRD analysis. The grain sizes and roughness of the films were decreases with the increasing concentration and also at the higher concentration films are shown by the same images presence of hexagonal like crystallite structure. The influence of complexing agent TEA on the surface roughness and morphological properties are confirmed by the atomic force microscope (AFM) results. The effect of increasing substrate concentration on the absorption and transmission measurements and its impact on the optical band-gap energy were enumerated from the UV–vis analysis.

  4. Development of graded Ni-YSZ composite coating on Alloy 690 by Pulsed Laser Deposition technique to reduce hazardous metallic nuclear waste inventory.

    Science.gov (United States)

    Sengupta, Pranesh; Rogalla, Detlef; Becker, Hans Werner; Dey, Gautam Kumar; Chakraborty, Sumit

    2011-08-15

    Alloy 690 based 'nuclear waste vitrification furnace' components degrade prematurely due to molten glass-alloy interactions at high temperatures and thereby increase the volume of metallic nuclear waste. In order to reduce the waste inventory, compositionally graded Ni-YSZ (Y(2)O(3) stabilized ZrO(2)) composite coating has been developed on Alloy 690 using Pulsed Laser Deposition technique. Five different thin-films starting with Ni80YSZ20 (Ni 80 wt%+YSZ 20 wt%), through Ni60YSZ40 (Ni 60 wt%+YSZ 40 wt%), Ni40YSZ60 (Ni 40 wt%+YSZ 60 wt%), Ni20YSZ80 (Ni 20 wt%+YSZ 80 wt%) and Ni0YSZ100 (Ni 0 wt%+YSZ 100 wt%), were deposited successively on Alloy 690 coupons. Detailed analyses of the thin-films identify them as homogeneous, uniform, pore free and crystalline in nature. A comparative study of coated and uncoated Alloy 690 coupons, exposed to sodium borosilicate melt at 1000°C for 1-6h suggests that the graded composite coating could substantially reduced the chemical interactions between Alloy 690 and borosilicate melt. Copyright © 2011 Elsevier B.V. All rights reserved.

  5. Effects of Surface Modification of Nanodiamond Particles for Nucleation Enhancement during Its Film Growth by Microwave Plasma Jet Chemical Vapour Deposition Technique

    Directory of Open Access Journals (Sweden)

    Chii-Ruey Lin

    2014-01-01

    Full Text Available The seedings of the substrate with a suspension of nanodiamond particles (NDPs were widely used as nucleation seeds to enhance the growth of nanostructured diamond films. The formation of agglomerates in the suspension of NDPs, however, may have adverse impact on the initial growth period. Therefore, this paper was aimed at the surface modification of the NDPs to enhance the diamond nucleation for the growth of nanocrystalline diamond films which could be used in photovoltaic applications. Hydrogen plasma, thermal, and surfactant treatment techniques were employed to improve the dispersion characteristics of detonation nanodiamond particles in aqueous media. The seeding of silicon substrate was then carried out with an optimized spin-coating method. The results of both Fourier transform infrared spectroscopy and dynamic light scattering measurements demonstrated that plasma treated diamond nanoparticles possessed polar surface functional groups and attained high dispersion in methanol. The nanocrystalline diamond films deposited by microwave plasma jet chemical vapour deposition exhibited extremely fine grain and high smooth surfaces (~6.4 nm rms on the whole film. These results indeed open up a prospect of nanocrystalline diamond films in solar cell applications.

  6. Seismic modeling of fluvial-estuarine deposits in the Athabasca oil sands using ray-tracing techniques, Steepbank River area, northeastern Alberta

    Energy Technology Data Exchange (ETDEWEB)

    Langenberg, C. W.; Hein, F. J. [Alberta Energy and Utilities Board, Edmonton, AB (Canada); Lawton, D.; Cunningham, J. [Calgary Univ., Dept. of Geology and Geophysics, Calgary, AB (Canada)

    2002-03-01

    Seismic reflection characteristics of contrasting channel geometries in a five-section portion of the Steepbank River are modeled using ray-tracing techniques. Outcrop lithofacies associations are used to create a seismic model that can be used as a subsurface analog of other similar oil-sands successions. At least four channel complexes based on stratal bounding surfaces, arrangement of lithofacies, and consistent paleoflow patterns have been identified. The lower part of each channel complex contains trough crossbedded sandstone, exhibiting high porosity and permeability. These sandstones were deposited in channel axes and are the highest grade bitumen deposits in the area. The upper parts of the channels contain significantly lower bitumen saturation values due to common interbedded mudstone. Nearby wells contain cored and logged intervals that are similar to exposed outcrops in the riverbank. Overall modeling results indicate that channel complexes can be imaged seismically, given data of sufficient quality and frequency. Bitumen grade may be predicted in these seismic lines, which has important consequences for bitumen exploration and extraction in the Steepbank River region. 64 refs., 26 figs.

  7. Structural and photoluminescence characterization of SnO{sub 2}: F thin films deposited by advanced spray pyrolysis technique at low substrate temperature

    Energy Technology Data Exchange (ETDEWEB)

    Shewale, P.S. [Thin Film Physics Laboratory, Department of Electronics, Shivaji University, Kolhapur 416004 (India); Ung Sim, Kyu; Kim, Ye-bin; Kim, J.H. [Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Buk-Gu, Gwangju 500757 (Korea, Republic of); Moholkar, A.V. [Department of Physics, Shivaji University, Kolhapur 416004 (India); Uplane, M.D., E-mail: mdu_eln@unishivaji.ac.in [Thin Film Physics Laboratory, Department of Electronics, Shivaji University, Kolhapur 416004 (India)

    2013-07-15

    Fluorine doped tin oxide (FTO) thin films were deposited on glass substrates, at different substrate temperatures using advanced spray pyrolysis technique. X-ray diffraction studies showed that the crystallinity of the thin films increased with increasing substrate temperature. FESEM and AFM studies support the conclusions drawn from X-ray diffraction studies. X-ray photoelectron studies confirm oxygen deficiency in formation of the FTO nanocrystallites. The photoluminescence of the FTO films were investigated. It was found that, room temperature photoluminescence spectra are dominated by oxygen vacancies and exhibit a rich violet photoluminescence band about ∼404 nm with an extensively feeble red emission about 700 nm. The Photoluminescence intensity varies with the substrate temperature. The photoemission position is observed to be independent of substrate temperature. -- Highlights: ► Photoluminescent FTO thin films were deposited at low substrate temperatures. ► Influence of substrate temperature on the PL characteristics was studied. ► The samples are polycrystalline with a cassiterite tetragonal crystal structure. ► The room temperature UV/violet PL emission was dominated by the oxygen vacancies. ► PL efficiency is optimum at 613 K substrate temperature.

  8. Growth of superconducting Bi2Sr2CaCu2O8+δ films by sedimentation deposition and liquid phase sintering and annealing technique

    International Nuclear Information System (INIS)

    Manahan, R.L.C.; Sarmago, R.V.

    2006-01-01

    We report on a technique of growing highly c-axis oriented Bi 2 Sr 2 CaCu 2 O 8+δ (Bi-2212) thick films on MgO substrate using a combined sedimentation-deposition and liquid phase sintering and annealing process. The temperature profiles employed partial melting followed by rapid cooling to temperature below the melting point. Scanning electron micrographs show that the films have a smooth surface. No evidence of grain boundaries on the film's surface can be seen. The critical temperatures of the samples range from ∼67 K to ∼81 K. This method presents a quick and easy preparation for high quality epitaxial Bi-2212 films

  9. Fe3O4/γ-Fe2O3 nanoparticle multilayers deposited by the Langmuir-Blodgett technique for gas sensors application.

    Science.gov (United States)

    Capone, S; Manera, M G; Taurino, A; Siciliano, P; Rella, R; Luby, S; Benkovicova, M; Siffalovic, P; Majkova, E

    2014-02-04

    Fe3O4/γ-Fe2O3 nanoparticles (NPs) based thin films were used as active layers in solid state resistive chemical sensors. NPs were synthesized by high temperature solution phase reaction. Sensing NP monolayers (ML) were deposited by Langmuir-Blodgett (LB) techniques onto chemoresistive transduction platforms. The sensing ML were UV treated to remove NP insulating capping. Sensors surface was characterized by scanning electron microscopy (SEM). Systematic gas sensing tests in controlled atmosphere were carried out toward NO2, CO, and acetone at different concentrations and working temperatures of the sensing layers. The best sensing performance results were obtained for sensors with higher NPs coverage (10 ML), mainly for NO2 gas showing interesting selectivity toward nitrogen oxides. Electrical properties and conduction mechanisms are discussed.

  10. Thermal and optical properties of polycrystalline CdS thin films deposited by the gradient recrystallization and growth (GREG) technique using photoacoustic methods

    International Nuclear Information System (INIS)

    Albor-Aguilera, M.L.; Gonzalez-Trujillo, M.A.; Cruz-Orea, A.; Tufino-Velazquez, M.

    2009-01-01

    In this work we report the study of the thermal and optical properties of polycrystalline CdS thin films deposited by the gradient recrystallization and growth technique. CdS films were grown on pyrex glass substrates. These studies were carried out using an open photoacoustic cell made out of an electret microphone. From X-ray diffraction, atomic force microscope and photoluminescence measurements we observed polycrystalline CdS films with good morphology and crystalline quality. We obtained a thermal diffusivity coefficient of our samples with values ranging from 3.15 to 3.89 x 10 -2 cm 2 /s. For comparison, we measured a value of 1.0 x 10 -2 cm 2 /s for the thermal diffusivity coefficient of a CdS single crystal. We measured an energy gap value of 2.42 eV for our samples by using a photoacoustic spectroscopy system

  11. Hydrogen-related defects in Al2O3 layers grown on n-type Si by the atomic layer deposition technique

    Science.gov (United States)

    Kolkovsky, Vl.; Stübner, R.

    2018-04-01

    The electrical properties of alumina films with thicknesses varying from 15 nm to 150 nm, grown by the atomic layer deposition technique on n-type Si, were investigated. We demonstrated that the annealing of the alumina layers in argon (Ar) or hydrogen (H) atmosphere at about 700 K resulted in the introduction of negatively charged defects irrespective of the type of the substrate. These defects were also observed in samples subjected to a dc H plasma treatment at temperatures below 400 K, whereas they were not detected in as-grown samples and in samples annealed in Ar atmosphere at temperatures below 400 K. The concentration of these defects increased with a higher H content in the alumina films. In good agreement with theory we assigned these defects to interstitial H-related defects.

  12. Anti-microbial surfaces: An approach for deposition of ZnO nanoparticles on PVA-Gelatin composite film by screen printing technique

    Energy Technology Data Exchange (ETDEWEB)

    Meshram, J.V.; Koli, V.B.; Phadatare, M.R.; Pawar, S.H., E-mail: shpawar1946@gmail.com

    2017-04-01

    Initially micro-organisms get exposed to the surfaces, this demands development of anti-microbial surfaces to inhibit their proliferation. Therefore, herein, we attempt screen printing technique for development of PVA-GE/ZnO nanocomposite (PG/ZnO) films. The synthesis of PG/ZnO nanocomposite includes two steps as: (i) Coating of Zinc Oxide nanoparticles (ZnO NPs) by poly ethylene glycol in order to be compatible with organic counterparts. (ii) Deposition of coated nanoparticles on the PG film surface. The results suggest the enhancement in anti-microbial activity of PG/ZnO nanocomposite over pure ZnO NPs against both Gram positive Bacillus subtilis and Gram negative Escherichia coli from zone of inhibition. The uniformity in deposition is further confirmed by scanning electron microscopy (SEM) images. The phase identification of ZnO NPs and formation of PG/ZnO nanocomposite has been confirmed by X-ray diffraction (XRD) analysis and UV–vis spectroscopy (UV–vis). The Attenuated total reflection Spectroscopy (ATR) analysis indicates the ester bond between PVA and gelatin molecules. The thermal stability of nanocomposite is studied by thermogravimetric analysis (TGA) revealing increase in crystallinity due to ZnO NPs which could be utilized to inhibit the growth of micro-organisms. The tensile strength is found to be higher and percent elongation is double of PG/ZnO nanocomposite than PG composite film. - Highlights: • Synthesis of PG/ZnO nanocomposite by screen printing technique • Antimicrobial activity is due presence of ZnO nanoparticles on PG composite. • Improved tensile strength due to ZnO nanoparticles.

  13. Zn speciation in a soil contaminated by the deposition of a dredged sediment by synchrotron X-ray techniques

    International Nuclear Information System (INIS)

    Isaure, Marie-Pierre; Manceau, Alain; Laboudigue, Agnes; Tamura, Nobumichi; Marcus, Matthew A.

    2003-09-01

    The nature and proportion of Zn species present in an agricultural soil overlaid by a dredged contaminated sediment have been untangled by the novel combination of three non-invasive synchrotron-based x-ray techniques: x-ray microfluorescence (μSXRF), microdiffraction (μXRD), and absorption spectroscopy (EXAFS). One primary (franklinite) and two secondary (phyllomanganate and phyllosilicate) Zn-containing minerals were identified in the initial soil, and another primary (ZnS) and a new secondary (Fe-(oxyhydr)oxide) Zn species in the covered soil. The quantitative analysis of EXAFS spectra recorded on bulk samples indicated that ZnS and Zn-Fe (oxyhydr)oxides amounted to 71+-10 percent and 27+-10 percent, respectively, and the other Zn species to less than 10 percent. The two new Zn species found in the covered soil result from the gravitational migration of ZnS particles initially present in the sediment, and from their further oxidative dissolution and fixation of leached Zn on F e (oxyhydr) oxides

  14. Optimal Materials and Deposition Technique Lead to Cost-Effective Solar Cell with Best-Ever Conversion Efficiency (Fact Sheet)

    Energy Technology Data Exchange (ETDEWEB)

    2012-07-01

    This fact sheet describes how the SJ3 solar cell was invented, explains how the technology works, and why it won an R&D 100 Award. Based on NREL and Solar Junction technology, the commercial SJ3 concentrator solar cell - with 43.5% conversion efficiency at 418 suns - uses a lattice-matched multijunction architecture that has near-term potential for cells with {approx}50% efficiency. Multijunction solar cells have higher conversion efficiencies than any other type of solar cell. But developers of utility-scale and space applications crave even better efficiencies at lower costs to be both cost-effective and able to meet the demand for power. The SJ3 multijunction cell, developed by Solar Junction with assistance from foundational technological advances by the National Renewable Energy Laboratory, has the highest efficiency to date - almost 2% absolute more than the current industry standard multijunction cell-yet at a comparable cost. So what did it take to create this cell having 43.5% efficiency at 418-sun concentration? A combination of materials with carefully designed properties, a manufacturing technique allowing precise control, and an optimized device design.

  15. High-quality nonpolar a-plane GaN epitaxial films grown on r-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition

    Science.gov (United States)

    Yang, Weijia; Zhang, Zichen; Wang, Wenliang; Zheng, Yulin; Wang, Haiyan; Li, Guoqiang

    2018-05-01

    High-quality a-plane GaN epitaxial films have been grown on r-plane sapphire substrates by the combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD). PLD is employed to epitaxial growth of a-plane GaN templates on r-plane sapphire substrates, and then MOCVD is used. The nonpolar a-plane GaN epitaxial films with relatively small thickness (2.9 µm) show high quality, with the full-width at half-maximum values of GaN(11\\bar{2}0) along [1\\bar{1}00] direction and GaN(10\\bar{1}1) of 0.11 and 0.30°, and a root-mean-square surface roughness of 1.7 nm. This result is equivalent to the quality of the films grown by MOCVD with a thickness of 10 µm. This work provides a new and effective approach for achieving high-quality nonpolar a-plane GaN epitaxial films on r-plane sapphire substrates.

  16. Erosion and sediment deposition evaluation on a slope under pasture in Jandaia-GO using the '137Cs fallout' technique

    International Nuclear Information System (INIS)

    Arthur, Robson C.J.; Bacchi, Osny O.S.; Reichardt, Klaus; Oliveira, Carloeme Alves de; Correchel, Vladia

    2009-01-01

    Water erosion is one of the main forms of soil degradation and among the diverse factors that affect it, two of great importance are the soil cover and slope. Estimates of sediment distribution rates associated to the different uses and soil management practices are scarce and the employed methods in these determinations are in general costly and time consuming. Rates of sediment redistribution evaluated by means of the 137 Cs technique are based on the comparison of inventories of individual points of a given position and an inventory of reference, whose value represents the amount of 137 Cs of 'fallout' origin that was added to the local site. This allows evaluating situations of losses and accumulations of sediments by the erosive process. The objective of the present work was to analyze the sediment production in a pasture area and to measure the efficiency of riparian forests in trapping the erosion sediments coming from pasture, through the ' 137 Cs fallout' redistribution analysis. The study was carried out in Jandaia/GO, Brazil, in two dowslope transects located in a pasture area. Samples were taken from seven points of two 140 m long transects, as well as from three soil profiles of a 15 m transect in the downstream riparian forests of each transect. Soil profiles were sampled in three layers of 20 cm (0-20, 20-40 and 40-60). The soil samples were air dried, sieved and then analyzed for 137 Cs activity by a gamma ray detector (GEM-20180P, EG and ORTEC) coupled to a multichannel analyzer at CENA/USP. The results indicate variations of 137 Cs activity in soil profiles and high erosion rates to the riparian forest to the pasture areas of the two transects, showing sediment movement from the pasture area to the riparian forest, which suggests that the current width of the forest is not wide enough to trap the sediments produced upslope in the pasture area. (author)

  17. Erosion and sediment deposition evaluation in two slopes under different tillage systems using the '137Cs fallout' technique

    International Nuclear Information System (INIS)

    Arthur, Robson C.J.; Oliveira, Roberto A.S.; Bacchi, Osny O.S.; Correchel, Vladia; Santos, Dileia S.; Sparovek, Gerd

    2007-01-01

    With the increasing of occupation of the Brazilian Cerrado a series of environmental problems followed by the deforestation as soil erosion and soil compaction are appearing, and many of than are being related to the CT used. The NT cropping system which is being adopted more recently in the 'cerrado' region, has revealed benefic to the soil, mainly in terms of soil erosion control. The objective of the present work was to analyze the effect of the No Tillage NT and Conventional Tillage CT systems on the erosion process and to measure the efficiency of the riparian forest in trapping the sediments produced by erosion coming from crop areas cultivated by both systems trough the technique of 137Cs 'fallout' redistribution analysis. The study was carried out in Goiatuba/GO in two sampling dowslope transects located in areas of CT and NT cropping systems. Samples were taken from five points in transects of 200 and 140 meters long respectively, as well as from three soil profiles of a 30 m transect in the downstream riparian forests of each area. Incremental depth samples were also taken from two pits inside each transect in the forest down to 40 and 60 cm depth for the CT and NT respectively. The soil samples were air dried and sieved and the 137 Cs activity was analyzed for in a gamma ray detector (GEM-20180P, EG and ORTEC) coupled to a multichannel analyzer at CENA/USP. The results indicate variation of 137 Cs in soil profiles and high erosion rates for both cropping areas also indicate a movement of sediments from the two cropping areas to the riparian forest. (author)

  18. Investigation of chemical vapour deposition diamond detectors by X-ray micro-beam induced current and X-ray micro-beam induced luminescence techniques

    International Nuclear Information System (INIS)

    Olivero, P.; Manfredotti, C.; Vittone, E.; Fizzotti, F.; Paolini, C.; Lo Giudice, A.; Barrett, R.; Tucoulou, R.

    2004-01-01

    Tracking detectors have become an important ingredient in high-energy physics experiments. In order to survive the harsh detection environment of the large hadron collider (LHC), trackers need to have special properties. They must be radiation hard, provide fast collection of charge, be as thin as possible and remove heat from readout electronics. The unique properties of diamond allow it to fulfill these requirements. In this work we present an investigation of the charge transport and luminescence properties of 'detector grade' artificial chemical vapour deposition (CVD) diamond devices developed within the CERN RD42 collaboration, performed by means of X-ray micro-beam induced current collection (XBICC) and X-ray micro-beam induced luminescence (XBIL) techniques. XBICC technique allows quantitative estimates of the transport parameters of the material to be evaluated and mapped with micrometric spatial resolution. In particular, the high resolution and sensitivity of the technique has allowed a quantitative study of the inhomogeneity of the charge transport parameter defined as the product of mobility and lifetime for both electron and holes. XBIL represents a technique complementary to ion beam induced luminescence (IBIL), which has already been used by our group, since X-ray energy loss profile in the material is different from that of MeV ions. X-ray induced luminescence maps have been performed simultaneously with induced photocurrent maps, to correlate charge transport and induced luminescence properties of diamond. Simultaneous XBICC and XBIL maps exhibit features of partial complementarity that have been interpreted on the basis of considerations on radiative and non-radiative recombination processes which compete with charge transport efficiency

  19. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Monemar, Bo [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Lindgren, David; Samuelson, Lars [Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Ni, Xianfeng; Morkoc, Hadis [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072 (United States); Paskova, Tanya [Kyma Technologies Inc., Raleigh, North Carolina 27617 (United States); Bi, Zhaoxia; Ohlsson, Jonas [Glo AB, Ideon Science Park, Scheelevaegen 17, 223 70 Lund (Sweden)

    2011-07-15

    Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10{sup 18} cm{sup -3} to above 10{sup 20} cm{sup -3}. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly discussed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Photoluminescence and photoluminescence excitation studies in 80 MeV Ni ion irradiated MOCVD grown GaN

    Energy Technology Data Exchange (ETDEWEB)

    Devaraju, G. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Pathak, A.P., E-mail: appsp@uohyd.ernet.in [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Srinivasa Rao, N.; Saikiran, V. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Enrichi, Francesco [Coordinamento Interuniversitario Veneto per le Nanotecnologie (CIVEN), via delle Industrie 5, Marghera, I-30175Venice (Italy); Trave, Enrico [Dipartimento di Chimica Fisica, Universita Ca' Foscari Venezia, Dorsoduro 2137, I-30123 Venice (Italy)

    2011-09-01

    Highlights: {yields} MOCVD grown GaN samples are irradiated with 80 MeV Ni ions at room temperature. {yields} PL and PLE studies have been carried out for band to band, BL and YL emissions. {yields} Ni ions irradiated GaN shows BL band at 450 nm besides YL band. {yields} Radiation annealed Ga vacancies have quenching effect on YL intensity. {yields} We speculated that BL and YL are associated with N and Ga vacancies, respectively. - Abstract: We report damage creation and annihilation under energetic ion bombardment at a fixed fluence. MOCVD grown GaN thin films were irradiated with 80 MeV Ni ions at a fluence of 1 x 10{sup 13} ions/cm{sup 2}. Irradiated GaN thin films were subjected to rapid thermal annealing for 60 s in nitrogen atmosphere to anneal out the defects. The effects of defects on luminescence were explored with photoluminescence measurements. Room temperature photoluminescence spectra from pristine sample revealed presence of band to band transition besides unwanted yellow luminescence. Irradiated GaN does not show any band to band transition but there is a strong peak at 450 nm which is attributed to ion induced defect blue luminescence. However, irradiated and subsequently annealed samples show improved band to band transitions and a significant decrease in yellow luminescence intensity due to annihilation of defects which were created during irradiation. Irradiation induced effects on yellow and blue emissions are discussed.

  1. Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

    Science.gov (United States)

    Consiglio, Steven P.

    To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of

  2. Characterization of Al{sub x}Ga{sub 1-x}As/GaAs heterostructures for single quantum wells grown by a solid arsenic MOCVD system

    Energy Technology Data Exchange (ETDEWEB)

    Castillo-Ojeda, R. [Universidad Politecnica de Pachuca, Km. 20, Rancho Luna, Ex-Hacienda de Santa Barbara, Municipio de Zempoala, Hidalgo 43830 (Mexico); Diaz-Reyes, J., E-mail: jdiazr2001@yahoo.co [Instituto Politecnico Nacional, Centro de Investigacion en Biotecnologia Aplicada, CIBA-IPN, Ex Hacienda de San Juan Molino, Km. 1.5. Tepetitla, Tlaxcala 90700 (Mexico); Galvan-Arellano, M.; Pena-Sierra, R. [CINVESTAV-IPN, Depto. de Ing. Electrica, SEES. Apdo. 14-740, Mexico, D.F. 07000 (Mexico)

    2011-06-15

    This work presents the results of the growth and characterization of Al{sub x}Ga{sub 1-x}As/GaAs multilayer structures obtained in a metallic-arsenic-based-MOCVD system. The main goal is to explore the ability of the growth system to grow high quality multilayer structures like quantum wells. The use of metallic arsenic could introduce important differences in the growth process due to the absence of the hydride group V precursor (AsH{sub 3}), which manifests in the electrical and optical characteristics of both GaAs and Al{sub x}Ga{sub 1-x}As layers. The characterization of these epilayers and structures was performed using low-temperature photoluminescence, Hall effect measurements, X-ray diffraction, Raman spectroscopy, secondary ion mass spectroscopy (SIMS) and Atomic Force Microscopy (AFM). - Research highlights: {yields} This work is reported the growth of AlxGa1-xAs/GaAs/AlxGa1-xAs heterostructures by a solid arsenic based MOCVD system. {yields} The results obtained with this system are comparable with those obtained with the traditional arsine based growth system. {yields} The main limitation of the alternative MOCVD system is related to the lack of monoatomic hydrogen on the growth surface that acts modifying the surface kinetics and enhancing the carbon incorporation. {yields} The experimental results indicate that it can be grown AlxGa1-xAs using elemental arsenic by MOCVD, which can be used to optoelectronic devices.

  3. Applications of prospecting geochemical techniques to the search for and to the study of uranium deposits in metropolitan France; Applications des techniques geochimiques de prospection a la recherche et a l'etude des gites uraniferes en France metropolitaine

    Energy Technology Data Exchange (ETDEWEB)

    Grimbert, Arnold

    1957-07-01

    After having recalled facts which leaded the CEA to use new geochemical techniques for the prospecting of uranium deposits through sampling and analysis of soils and waters, the author describes the organisation and methods implemented for this prospecting activity: team composition for sampling and analysis, role of each engineer and technician in the prospecting stages (preliminary study, routine prospecting, result interpretation), sampling and analysis processes. He also reports campaigns of geochemical prospecting: study of the La Chapelle Largeau deposit (objectives, geological context, preliminary study, routine prospecting, study of geochemical anomalies), tactical research on Verneix indices (study of radioactivity anomaly discovered by radio-prospecting), strategical searches in a non prospected area in the South of Avallon. The author discusses the issues of efficiency and cost price of this geochemical prospecting technique in soils and in waters. Appendices present the equipment and operation modality for soil sampling, and for soil sample preparation, and principles, equipment and products for soil analysis and for water analysis [French] A la suite des resultats satisfaisants obtenus dans la recherche de methodes de dosage adaptees au cas de l'uranium, la Direction des Recherches Minieres du Commissariat a l'Energie atomique a decide, en decembre 1954, d'utiliser, conjointement avec les methodes classiques de prospection, les techniques geochimiques pour la recherche et l'etude des gites uraniferes. Ces applications pratiques ont ete confiees a une Section de Geochimie dont l'organisation, les moyens en personnel et en materiel, ainsi que les methodes de travail, font l'objet d'un expose detaille. Quelques exemples de prospection, en France metropolitaine, montrent la nature des problemes poses (etude d'un gisement connu, recherche tactique sur des indices, recherche strategique dans une region non prospectee), les methodes utilisees pour les

  4. Influence of different carrier gases on the properties of ZnO films grown by MOCVD

    Directory of Open Access Journals (Sweden)

    Wang, Jinzhong

    2008-08-01

    Full Text Available ZnO films were grown on sapphire (001 substrate by atmospheric MOCVD using diethyl zinc and tertiary butanol precursors. The influence of different carrier gases (H2 and He on the properties was analyzed by their structural (XRD, microstructural (SEM and compositional (SIMS characterization. The intensity of the strongest diffraction peak from ZnO (002 plane was increased by about 2 orders of magnitude when He is used as carrier gas, indicating the significant enhancement in crystallinity. The surface of the samples grown using H2 and He carrier gases was composed of leaf-like and spherical grains respectively. Hydrogen [H] content in the film grown using H2 is higher than that using He, indicating that the [H] was influenced by the H2 carrier gas. Ultraviolet emission dominates the low temperature PL spectra. The emission from ZnO films grown using He show higher optical quality and more emission centers.

    Se depositaron películas de ZnO sobre sustratos de zafiro (001 utilizando dietil zinc y butanol terciario como precursores. La influencia de los diferentes gases portadores (H2 y He sobre las propiedades se estudió mediante la caracterización estructural (XRD, microestructural (SEM y composicional (SIMS. La intensidad del pico de difracción más importante del plano (002 del ZnO aumentó en dos órdenes de magnitud cuando se utiliza He como gas portador indicando un incremento significativo de la cristalinidad. La superficie de las muestras crecidas utilizando H2 y He está formada por granos en forma de hoja y de forma esférica respectivamente. El contenido en hidrógeno (H en la película es mayor cuando se utiliza H2 que cuando se utiliza He, indicando que la cantidad de hidrógeno está influenciada por el H2 del gas portador. La emisión ultravioleta domina el espectro PL de baja temperatura. La emisión de las películas de ZnO utilizando

  5. Application of the electrophoretic deposition technique for obtaining Yttria-stabilized zirconia tubes; Aplicacao da tecnica de deposicao eletroforetica para a obtencao de tubos ceramicos de zirconia-itria

    Energy Technology Data Exchange (ETDEWEB)

    Caproni, E.; Muccillo, R., E-mail: ecaproni@gmail.com, E-mail: muccillo@usp.br [Centro de Ciencia e Tecnologia de Materiais, Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2012-01-15

    The electrophoretic deposition (EPD) is recognized as the most versatile technique for processing particulate materials, due to low cost, deposition in minutes and forming of pieces with complex geometry shapes. In this work an experimental setup for the simultaneous conformation of 16 ceramic tubes by EPD was built. Bimodal submicron Yttria-stabilized zirconia particles were deposited into graphite electrodes, after suitably adjusting the rheological characteristics of the suspension in isopropanol. After graphite burning and YSZ sintering at 1500 deg C, the ceramic tubes were characterized by X-ray diffraction, scanning probe microscope, impedance spectroscopy and electrical response as a function of oxygen content. Small dense one end-closed ceramic tubes, fully stabilized in the cubic phase, were successfully obtained by the EPD technique, showing the ability of that technique for processing large quantities of tubular solid electrolytes with electrical response to different amounts of oxygen according to the Nernst law (author)

  6. Synthesis of core/shell ZnO/ZnSe nanowires using novel low cost two-steps electrochemical deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Ghoul, M., E-mail: ghoulmed2009@yahoo.fr [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l' Energie Technopole BorjCedria, Bp 95, Hammammlif 2050 (Tunisia); Braiek, Z. [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l' Energie Technopole BorjCedria, Bp 95, Hammammlif 2050 (Tunisia); Brayek, A. [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l' Energie Technopole BorjCedria, Bp 95, Hammammlif 2050 (Tunisia); ITODYS, Université Paris Diderot, Sorbonne Paris Cité, CNRS UMR – 7086, 75205 Paris (France); Ben Assaker, I.; Khalifa, N.; Ben Naceur, J.; Souissi, A.; Lamouchi, A. [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l' Energie Technopole BorjCedria, Bp 95, Hammammlif 2050 (Tunisia); Ammar, S. [ITODYS, Université Paris Diderot, Sorbonne Paris Cité, CNRS UMR – 7086, 75205 Paris (France); Chtourou, R. [Laboratoire Photovoltaïque, Centre de Recherches et des Technologies de l' Energie Technopole BorjCedria, Bp 95, Hammammlif 2050 (Tunisia)

    2015-10-25

    This work highlights the original use of a two-step electrochemical deposition protocol to grow ZnO/ZnSe core/shell nanowires on a Sn-doped In{sub 2}O{sub 3} (ITO)/glass substrate. The good alignment of the nanowires is verified by the scanning electron microscopy characterization technique in addition to the surface roughness after the ZnSe electrodeposition on the ZnO nanowires lateral facets. The X-ray diffraction patterns and Raman spectra allow estimating that ZnO has grown along the wurtzite (W) structure c-axis. The presence of the type-II interfacial transition between the valence band of ZnSe and the conduction band of ZnO was confirmed by UV–visible spectroscopy. It was proved that the absorbed energy of the developed nanostructures is extended to the near infrared which is well recommended for the photovoltaic applications. - Graphical abstract: Fabrication of the ZnO–ZnSe core–shell nanowires through a solution based all-electrochemical approach, and their application as photoanodes in photoelectrochemical water splitting cells. - Highlights: • Deposition of ZnO/ZnSe nanowires by two steps electrodeposition method. • The morphology studies show the formation of ZnO/ZnSe core/Shell nanowires. • XRD and Raman spectroscopy confirm the presence of the wurtzite ZnO and blende ZnSe junction. • Optical properties demonstrate the evidence type-II interfacial transition between the two semiconductors.

  7. HCl Flow-Induced Phase Change of α-, β-, and ε-Ga2O3 Films Grown by MOCVD

    KAUST Repository

    Sun, Haiding

    2018-03-06

    Precise control of the heteroepitaxy on a low-cost foreign substrate is often the key to drive the success of fabricating semiconductor devices in scale when a large low-cost native substrate is not available. Here, we successfully synthesized three different phases of Ga2O3 (α, β, and ε) films on c-plane sapphire by only tuning the flow rate of HCl along with other precursors in an MOCVD reactor. A 3-fold increase in the growth rate of pure β-Ga2O3 was achieved by introducing only 5 sccm of HCl flow. With continuously increased HCl flow, a mixture of β- and ε-Ga2O3 was observed, until the Ga2O3 film transformed completely to a pure ε-Ga2O3 with a smooth surface and the highest growth rate (∼1 μm/h) at a flow rate of 30 sccm. At 60 sccm, we found that the film tended to have a mixture of α- and ε-Ga2O3 with a dominant α-Ga2O3, while the growth rate dropped significantly (∼0.4 μm/h). The film became rough as a result of the mixture phases since the growth rate of ε-Ga2O3 is much higher than that of α-Ga2O3. In this HCl-enhanced MOCVD mode, the Cl impurity concentration was almost identical among the investigated samples. On the basis of our density functional theory calculation, we found that the relative energy between β-, ε-, and α-Ga2O3 became smaller, thus inducing the phase change by increasing the HCl flow in the reactor. Thus, it is plausible that the HCl acted as a catalyst during the phase transformation process. Furthermore, we revealed the microstructure and the epitaxial relationship between Ga2O3 with different phases and the c-plane sapphire substrates. Our HCl-enhanced MOCVD approach paves the way to achieving highly controllable heteroepitaxy of Ga2O3 films with different phases for device applications.

  8. Potentials and pitfalls of depth profile (10Be), burial isochron (26Al/10Be) and palaeomagnetic techniques for dating Early Pleistocene terrace deposits of the Moselle valley (Germany)

    Science.gov (United States)

    Rixhon, Gilles; Cordier, Stéphane; May, Simon Matthias; Kelterbaum, Daniel; Szemkus, Nina; Keulertz, Rebecca; Dunai, Tibor; Binnie, Steven; Hambach, Ulrich; Scheidt, Stephanie; Brueckner, Helmut

    2016-04-01

    Throughout the river network of the Rhenish Massif the so-called main terraces complex (MTC) forms the morphological transition between a wide upper palaeovalley and a deeply incised lower valley. The youngest level of this complex (YMT), directly located at the edge of the incised valley, represents a dominant geomorphic feature; it is often used as a reference level to identify the beginning of the main middle Pleistocene incision episode (Demoulin & Hallot, 2009). Although the main terraces are particularly well preserved in the lower Moselle valley, a questionable age of ca. 800 ka is assumed for the YMT, mainly based on the uncertain extrapolation of controversially interpreted palaeomagnetic data obtained in the Rhine valley. In this study, we applied terrestrial cosmogenic nuclide (TCN) dating (10Be/26Al) and palaeomagnetic dating to Moselle fluvial sediments of the MTC. To unravel the spatio-temporal characteristics of the Pleistocene evolution of the valley, several sites along the lower Moselle were sampled following two distinct TCN dating strategies: depth profiles where the original terrace (palaeo-) surface is well preserved and did not experience a major post-depositional burial (e.g., loess cover); and the isochron technique, where the sediment thickness exceeds 4.5-5 m. One terrace deposit was sampled for both approaches (reference site). In addition, palaeomagnetic sampling was systematically performed in each terrace sampled for TCN measurements. The TCN dating techniques show contrasting results for our reference site. Three main issues are observed for the depth profile method: (i) an inability of the modeled profile to constrain the 10Be concentration of the uppermost sample; (ii) an overestimated density value as model output; and (iii) a probable concentration steady state of the terrace deposits. By contrast, the isochron method yields a burial age estimate of 1.26 +0.29/-0.25 Ma, although one sample showed a depleted 26Al/10Be ratio

  9. Kinetic study of formic acid oxidation on Ti/IrO{sub 2} electrodes prepared using the spin coating deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Fierro, Stephane, E-mail: stephane.fierro@epfl.c [Institute of Chemical Sciences and Engineering, Swiss Federal Institute of Technology, ISIC-EPFL, CH-1015 Lausanne (Switzerland); Comninellis, Christos [Institute of Chemical Sciences and Engineering, Swiss Federal Institute of Technology, ISIC-EPFL, CH-1015 Lausanne (Switzerland)

    2010-09-30

    In the first part of this paper, IrO{sub 2} electrodes produced by thermal decomposition of H{sub 2}IrCl{sub 6} precursor were manufactured using the spin coating deposition technique, where centrifugal forces spread the precursor solution with simultaneous evaporation of the solvent on the rotating Ti substrate. It was found using this technique, that it is possible to obtain thin and uniform IrO{sub 2} coatings with controlled loadings. The influence of the concentration of iridium salt in the precursor solution (c{sub 0}) as well as the influence of the rotation speed at which the substrate spins ({omega}) on the IrO{sub 2} loading have been studied using voltammetric charge measurements. From these results, a simple relation has been proposed for the estimation of the IrO{sub 2} loading for a given c{sub 0} and {omega}. In the second part of this paper and from measurements performed using different IrO{sub 2} loadings and formic acid concentrations, the kinetic parameters of the oxidation of formic acid have been quantitatively determined using a model that involves the redox couple IrO{sub 3}/IrO{sub 2} as mediator of this reaction. Furthermore, using the kinetic parameters obtained together with the Nernst equation and the I-V curves of the supporting electrolyte (1 M HClO{sub 4}), theoretical I-V curves could be constructed for different concentrations of formic acid and different IrO{sub 2} loadings.

  10. Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-//sub delta/ thin films grown by a simple spray deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, A.; Koren, G.; Giess, E.A.; Moore, N.R.; O' Sullivan, E.J.M.; Cooper, E.I.

    1988-01-11

    The preparation of high T/sub c/ superconducting thin films of Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7-//sub delta/ on (100) single crystals of MgO, ZrO/sub 2/ with 9% Y/sub 2/O/sub 3/ (yttria stabilized zirconia, or YSZ), and SrTiO/sub 3/ using a simple spray deposition technique is described. Typical film growth procedure involves (a) the spraying of a stoichiometric solution of the nitrate precursors on the heated substrate (180 /sup 0/C), (b) prebaking in air of the sprayed film (20 min at 500 /sup 0/C), and (c) oven annealing of the film under flowing O/sub 2/ (900--950 /sup 0/C followed by slow cooling to 200 /sup 0/C in about 3 h). X-ray diffraction analysis of the films after each of the growing steps mentioned above shows primarily the presence of crystalline phases of the nitrates, the oxides, and the orthorhombic superconducting phase, respectively. Resistivity versus temperature measurements show that the onset and completion of the superconductive transition occur at 92 and 87 K, respectively, in films on YSZ substrate; at 95 and 80 K, respectively, in films on SrTiO/sub 3/ substrate; and at 82 and 77 K, respectively, in films on MgO substrate.

  11. Cu-Al alloy formation by thermal annealing of Cu/Al multilayer films deposited by cyclic metal organic chemical vapor deposition

    Science.gov (United States)

    Moon, Hock Key; Yoon, Jaehong; Kim, Hyungjun; Lee, Nae-Eung

    2013-05-01

    One of the most important issues in future Cu-based interconnects is to suppress the resistivity increase in the Cu interconnect line while decreasing the line width below 30 nm. For the purpose of mitigating the resistivity increase in the nanoscale Cu line, alloying Cu with traces of other elements is investigated. The formation of a Cu alloy layer using chemical vapor deposition or electroplating has been rarely studied because of the difficulty in forming Cu alloys with elements such as Al. In this work, Cu-Al alloy films were successfully formed after thermal annealing of Cu/Al multilayers deposited by cyclic metal-organic chemical vapor deposition (C-MOCVD). After the C-MOCVD of Cu/Al multilayers without gas phase reaction between the Cu and Al precursors in the reactor, thermal annealing was used to form Cu-Al alloy films with a small Al content fraction. The resistivity of the alloy films was dependent on the Al precursor delivery time and was lower than that of the aluminum-free Cu film. No presence of intermetallic compounds were detected in the alloy films by X-ray diffraction measurements and transmission electron spectroscopy.

  12. Pulsed injection metal organic chemical vapour deposition and characterisation of thin CaO films

    International Nuclear Information System (INIS)

    Borges, R.P.; Ferreira, P.; Saraiva, A.; Goncalves, R.; Rosa, M.A.; Goncalves, A.P.; Silva, R.C. da; Magalhaes, S.; Lourenco, M.J.V.; Santos, F.J.V.; Godinho, M.

    2009-01-01