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Sample records for deposition mocvd grown

  1. Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire[Metal Organic Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tiginyanu, I.M.; Kravetsky, I.V.; Pavlidis, D.; Eisenbach, A.; Hildebrandt, R.; Marowsky, G.; Hartnagel, H.L.

    2000-07-01

    Optical second and third harmonic generation measurements were carried out on GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The measured d{sub 33} is 33 times the d{sub 11} of quartz. The angular dependence of second-harmonic intensity as well as the measured ratios d{sub 33}/d{sub 15} = {minus}2.02 and d{sub 33}/d{sub 31} = {minus}2.03 confirm the wurzite structure of the studied GaN layers with the optical c-axis oriented perpendicular to the sample surface. Fine oscillations were observed in the measured second and third harmonic angular dependencies. A simple model based on the interference of the fundamental beam in the sample was used to explain these oscillations.

  2. Effect of deposition conditions on the growth rate and electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Roro, K.T.; Botha, J.R.; Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2008-07-01

    ZnO thin films have been grown on glass substrates by MOCVD. The effect of deposition conditions such as VI/II molar ratio, DEZn flow rate and total reactor pressure on the growth rate and electrical properties of the films was studied. It is found that the growth rate decreases with an increase in the VI/II molar ratio. This behaviour is ascribed to the competitive adsorption of reactant species on the growth surface. The growth rate increases with an increase in DEZn flow rate, as expected. It is shown that the carrier concentration is independent of the DEZn flow rate. An increase in the total reactor pressure yields a decrease in growth rate. This phenomenon is attributed to the depletion of the gas phase due to parasitic prereactions between zinc and oxygen species at high pressure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. High mobility, large linear magnetoresistance, and quantum transport phenomena in Bi2Te3 films grown by metallo-organic chemical vapor deposition (MOCVD).

    Science.gov (United States)

    Jin, Hyunwoo; Kim, Kwang-Chon; Seo, Juhee; Kim, Seong Keun; Cheong, Byung-Ki; Kim, Jin-Sang; Lee, Suyoun

    2015-11-07

    We investigated the magnetotransport properties of Bi2Te3 films grown on GaAs (001) substrate by a cost-effective metallo-organic chemical vapor deposition (MOCVD). We observed the remarkably high carrier mobility and the giant linear magnetoresistance (carrier mobility ∼ 22 000 cm(2) V(-1) s(-1), magnetoresistance ∼ 750% at 1.8 K and 9 T for a 100 nm thick film) that depends on the film thickness. In addition, the Shubnikov-de Haas oscillation was observed, from which the effective mass was calculated to be consistent with the known value. From the thickness dependence of the Shubnikov-de Haas oscillation, it was found that a two dimensional electron gas with the conventional electron nature coexists with the topological Dirac fermion states and dominates the carrier transport in the Bi2Te3 film with thickness higher than 300 nm. These results are attributed to the intrinsic nature of Bi2Te3 in the high-mobility transport regime obtained by a deliberate choice of the substrate and the growth conditions.

  4. In-situ deposition of YBCO high-Tc superconducting thin films by MOCVD and PE-MOCVD

    Science.gov (United States)

    Zhao, J.; Noh, D. W.; Chern, C.; Li, Y. Q.; Norris, P. E.; Kear, B.; Gallois, B.

    1991-01-01

    Metal-Organic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T(sub c) greater than 90 K and J(sub c) of approximately 10(exp 4) A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

  5. In Situ deposition of YBCO high-T(sub c) superconducting thin films by MOCVD and PE-MOCVD

    Science.gov (United States)

    Zhao, J.; Noh, D. W.; Chern, C.; Li, Y. Q.; Norris, P.; Gallois, B.; Kear, B.

    1990-01-01

    Metalorganic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T( sub c) greater than 90 K and Jc approx. 10 to the 4th power A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metalorganic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

  6. Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

    Science.gov (United States)

    Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

    2017-02-01

    In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

  7. Structural characterization of one-dimensional ZnO-based nanostructures grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Sallet, Vincent; Falyouni, Farid; Marzouki, Ali; Haneche, Nadia; Sartel, Corinne; Lusson, Alain; Galtier, Pierre [Groupe d' Etude de la Matiere Condensee (GEMAC), CNRS-Universite de Versailles St-Quentin, Meudon (France); Agouram, Said [SCSIE, Universitat de Valencia, Burjassot (Spain); Enouz-Vedrenne, Shaima [Thales Research and Technology France, Palaiseau (France); Munoz-Sanjose, Vicente [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, Burjassot (Spain)

    2010-07-15

    Various one-dimensional (1D) ZnO-based nanostructures, including ZnO nano-wires (NWs) grown using vapour-liquid-solid (VLS) process, ZnO/ZnSe core/shell, nitrogen-doped ZnO and ZnMgO NWs were grown by metalorganic chemical vapour deposition (MOCVD). Transmission electron microscopy (TEM) analysis is presented. For all the samples, a high crystalline quality is observed. Some features are emphasized such as the gold contamination of ZnO wires grown under the metal droplets in the VLS process. It is concluded that MOCVD is a suitable technique for the realization of original ZnO nanodevices. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  8. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.

    Science.gov (United States)

    Ra, Yong-Ho; Navamathavan, R; Park, Ji-Hyeon; Lee, Cheul-Ro

    2013-03-01

    This article describes the growth and device characteristics of vertically aligned high-quality uniaxial p-GaN/InxGa1-xN/GaN multiple quantum wells (MQW)/n-GaN nanowires (NWs) on Si(111) substrates grown by metal-organic chemical vapor deposition (MOCVD) technique. The resultant nanowires (NWs), with a diameter of 200-250 nm, have an average length of 2 μm. The feasibility of growing high-quality NWs with well-controlled indium composition MQW structure is demonstrated. These resultant NWs grown on Si(111) substrates were utilized for fabricating vertical-type light-emitting diodes (LEDs). The steep and intense photoluminescence (PL) and cathodoluminescence (CL) spectra are observed, based on the strain-free NWs on Si(111) substrates. High-resolution transmission electron microscopy (HR-TEM) analysis revealed that the MQW NWs are grown along the c-plane with uniform thickness. The current-voltage (I-V) characteristics of these NWs exhibited typical p-n junction LEDs and showed a sharp onset voltage at 2.75 V in the forward bias. The output power is linearly increased with increasing current. The result indicates that the pulsed MOCVD technique is an effective method to grow uniaxial p-GaN/InxGa1-xN/GaN MQW/n-GaN NWs on Si(111), which is more advantageous than other growth techniques, such as molecular beam epitaxy. These results suggest the uniaxial NWs are promising to allow flat-band quantum structures, which can enhance the efficiency of LEDs.

  9. Characterization of GaN Buffer Layers and Its Epitaxial Layers Grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Low-pressure MOCVD has been used to investigate the properties of low-temperature buffer layer deposition conditions and their influence on the properties of high-temperature GaN epilayers grown subsequently. It is found that the surface morphology of the as-grown buffer layer after thermal annealing at 1030℃ and 1050℃ depends strongly on the thickness of the buffer layer. In particular when a thick buffer layer is used, large trapezoidal nuclei are formed after annealing.

  10. Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    Xu Zhihao; Zhang Jincheng; Duan Huantao; Zhang Zhongfen; Zhu Qingwei; Xu Hao; Hao Yue

    2009-01-01

    The stresses, structural and electrical properties of n-type Si-doped GaN films grown by metalorganic chemical vapor deposition (MOCVD) are systemically studied. It is suggested that the main stress relaxation is induced by bending dislocations in low doping samples. But for higher doping samples, as the Si doping concentration increases, the in-plane stresses in the grown films are quickly relaxed due to the rapid increase of the edge dislocation densities. Hall effect measurements reveal that the carrier mobility first increases rapidly and then decreases with increasing Si doping concentration. This phenomenon is attributed to the interaction between various scattering process. It is suggested that the dominant scattering process is defect scattering for low doping samples and ionized impurity scattering for high doping samples.

  11. Stress, structural and electrical properties of Si-doped GaN film grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Xu Zhihao; Zhang Jincheng; Duan Huantao; Zhang Zhongfen; Zhu Qingwei; Xu Hao; Hao Yue, E-mail: forman1115@163.co [Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2009-12-15

    The stresses, structural and electrical properties of n-type Si-doped GaN films grown by metalorganic chemical vapor deposition (MOCVD) are systemically studied. It is suggested that the main stress relaxation is induced by bending dislocations in low doping samples. But for higher doping samples, as the Si doping concentration increases, the in-plane stresses in the grown films are quickly relaxed due to the rapid increase of the edge dislocation densities. Hall effect measurements reveal that the carrier mobility first increases rapidly and then decreases with increasing Si doping concentration. This phenomenon is attributed to the interaction between various scattering process. It is suggested that the dominant scattering process is defect scattering for low doping samples and ionized impurity scattering for high doping samples. (semiconductor materials)

  12. Room-temperature ferromagnetism in V-doped GaN thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Souissi, M.; El Jani, B. [Unite de Recherche sur les Hetero-Epitaxies et Applications, Faculte des Sciences de Monastir, 5000 Monastir (Tunisia); Schmerber, G.; Derory, A. [Institut de Physique et Chimie des Materiaux de Strasbourg (IPCMS), UMR7504 CNRS-UDS, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2 (France)

    2010-09-15

    V-doped GaN thin films were grown on c-sapphire substrate by metal organic chemical vapour deposition method (MOCVD). We have used vanadium tetrachloride (VCl{sub 4}) to intentionally incorporate vanadium (V) during the crystal growth of GaN. X-ray diffraction measurements revealed no secondary phase in the samples. Magnetic experiments using superconducting quantum interference device (SQUID) showed clear hysteresis loop in magnetization versus applied field (M -H) curves for V-doped GaN films. The ferromagnetic behavior was evidenced at 300 K, implying the Curie temperature to be over 300 K. Strong and broad blue-luminescent band (centered at 2.6 eV) is induced by the V doping in GaN. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells

    Science.gov (United States)

    Walters, Robert J.; Statler, Richard L.; Summers, Geoffrey P.

    1991-01-01

    The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.

  14. Carbonaceous alumina films deposited by MOCVD from aluminium acetylacetonate: a spectroscopic ellipsometry study

    Indian Academy of Sciences (India)

    M P Singh; G Raghavan; A K Tyagi; S A Shivashankar

    2002-04-01

    Spectroscopic ellipsometry was used to characterize carbonaceous, crystalline aluminium oxide films grown on Si(100) by low-pressure metal organic chemical vapour deposition, using aluminium acetylacetonate as the precursor. The presence of carbon in the films, attribured to the use of a metalorganic precursor for the deposition of films, was identified and analysed by secondary ion mass spectroscopy and X-ray photoelectron sectroscopy, for the elemental distribution and the chemical nature of the carbon in the films, respectively. Ellipsometry measurments over the photon energy range 1.5-5 eV were used to derive the pseudo-dielectric function of the aluminium oxide-containing films. Multi-layer modelling using linear regression techniques and the effective medium approximation were carried out to extract the structural details of the specimens. The excellent fit between the simulated and experimental optical data validates the empirical model for alumina-containing coatings grown by MOCVD.

  15. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  16. Magnesium doped GaN grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Guarneros, C., E-mail: cesyga@yahoo.com.mx [Ingenieria Electrica, Seccion Electronica del Estado Solido, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, Av. I.P.N. 2508, San Pedro Zacatenco, 07360 Mexico, D.F. (Mexico); Sanchez, V. [Ingenieria Electrica, Seccion Electronica del Estado Solido, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, Av. I.P.N. 2508, San Pedro Zacatenco, 07360 Mexico, D.F. (Mexico)

    2010-10-25

    We have studied the optical and electrical characteristics of undoped and doped GaN layers. The n- and p-type layers have been prepared by low pressure MOCVD technique. Photoluminescence (PL) studies were carried at low temperature. In the PL spectra of undoped GaN layer, a low intensity band edge emission and a broad yellow emission band were observed. The donor-acceptor pair (DAP) emission and its phonon replicas were observed in Mg lightly doped GaN layer. The dominance of the blue and the yellow emissions increased in the PL spectra as the Mg concentration was increased. The X-ray diffraction was employed to study the structure of the layers. Both the undoped and the doped layers exhibited hexagonal structure. The samples were annealed and significant changes were not observed in Hall Effect and in the PL measurements, so we suggest that there is no need of a thermal annealing for magnesium acceptor activation.

  17. Effect of silicon doping in InGaN/GaN heterostructure grown by MOCVD

    Science.gov (United States)

    Surender, S.; Pradeep, S.; Prabakaran, K.; Singh, Shubra; Baskar, K.

    2017-05-01

    In this work the effect of Si doped InGaN/GaN heterostructure is systematically studied. The n-InGaN /GaN heterostructure are grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD). The heterostructure samples are investigated by structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature Photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. The composition of indium in n-InGaN/GaN heterostructure was calculated as 15.9% using epitaxy smooth fit software. The energy band gap (Eg) of the InGaN epilayer has been calculated as 2.78 eV using vigard's law. PL emission obtained at 446 nm for n-InGaN epilayer. AFM results indicate that the Si doped InGaN/GaN heterostructure has the root mean square (rms) roughness of about 0.59 nm for a scan area of 5×5 µm2 which has island like growth. Moreover, Hall measurements results shows that Si doped InGaN/GaN heterostructure possess carrier concentration of 4.2 × 1018cm-3 and mobility of 257 cm2/V s at room temperature.

  18. Variable Energy Positron Annihilation Spectroscopy of GaN Grown on Sapphire Substrates with MOCVD

    Institute of Scientific and Technical Information of China (English)

    HU Yi-Fan; C.D. Beling; S. Fung

    2005-01-01

    @@ Depth profiled Doppler broadening of positron annihilation spectroscopy (DBPAS), which is also called the variable energy positron annihilation spectroscopy (VEPAS), is used in characterization of GaN grown on sapphire substrates with metal-organic chemical vapour deposition (MOCVD). The GaN film and the film/substrate interface are investigated. The VEPFIT (variable energy positron fit) software was used for analysing the data,and the positron diffusion length of the sapphire is obtained. The results suggest that there is a highly defected region near the GaN/sapphire interface. This thin dislocated region is generated at the film/substrate interface to relieve the strain. Effects of implantation dose on defect formation, for the GaN/Sapphire samples, which implanted by Al+ ions, are also investigated. Studies on Al+ implanted GaN films (not including the interface and sapphire) have revealed that there are two different regions of implantation damage. For the low Al+ implantation dose samples, in the region close to the surface, defects are mainly composed of vacancy pairs with small amount of vacancy clusters, and in the interior region of the film the positron traps are vacancy clusters without micro-voids. For the highest dose sample, however, some positron trap centres are in the form of micro-voids in the second region.

  19. Electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pagni, O. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Somhlahlo, N.N. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Weichsel, C. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)]. E-mail: andrew.leitch@nmmu.ac.za

    2006-04-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies.

  20. ZnO Nanostructures Grown on AlN/Sapphire Substrates by MOCVD

    Institute of Scientific and Technical Information of China (English)

    WEI Hong-Yuan; HU Wei-Guo; ZHANG Pan-Feng; LIU Xiang-Lin; ZHU Qin-Sheng; WANG Zhan-Guo

    2007-01-01

    ZnO nanorods and nanotubes are successful synthesized on AlN/sapphire substrates by metal-organic chemical vapour deposition (MOCVD). The different morphology and structure properties of ZnO nanorods and nanotubes are found to be affected by the A1N under-layer. The photoluminescence spectra show the optical properties of the ZnO nanorods and nanotubes, in which a blueshift of UV emission is observed and is attributed to the surface effect.

  1. Optoelectronic and structural properties of InGaN nanostructures grown by plasma-assisted MOCVD

    Science.gov (United States)

    Seidlitz, Daniel; Senevirathna, M. K. I.; Abate, Y.; Hoffmann, A.; Dietz, N.

    2015-09-01

    This paper presents optoelectronic and structural layer properties of InN and InGaN epilayers grown on sapphire templates by Migration-Enhanced Plasma Assisted Metal Organic Chemical Vapor Deposition (MEPA-MOCVD). Real-time characterization techniques have been applied during the growth process to gain insight of the plasma-assisted decomposition of the nitrogen precursor and associated growth surface processes. Analyzed Plasma Emission Spectroscopy (PES) and UV Absorption Spectroscopy (UVAS) provide detection and concentrations of plasma generated active species (N*/NH*/NHx*). Various precursors have been used to assess the nitrogen-active fragments that are directed from the hollow cathode plasma tube to the growth surface. The in-situ diagnostics results are supplemented with ex-situ materials structures investigation results of nanoscale structures using Scanning Near-field Optical Microscopy (SNOM). The structural properties have been analyzed by Raman spectroscopy and Fourier transform infrared (FTIR) reflectance. The Optoelectronic and optical properties were extracted by modeling the FTIR reflectance (e.g. free carrier concentration, high frequency dielectric constant, mobility) and optical absorption spectroscopy. The correlation and comparison between the in-situ metrology results with the ex-situ nano-structural and optoelectronic layer properties provides insides into the growth mechanism on how plasma-activated nitrogen-fragments can be utilized as nitrogen precursor for group III-nitride growth. The here assessed growth process parameter focus on the temporal precursor exposure of the growth surface, the reactor pressure, substrate temperature and their effects of the properties of the InN and InGaN epilayers.

  2. Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

    Science.gov (United States)

    Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

    2016-09-01

    In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor /acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

  3. Nucleation and Growth of MOCVD Grown (Cr, Zn)O Films – Uniform Doping vs. Secondary Phase Formation

    Energy Technology Data Exchange (ETDEWEB)

    Saraf, Laxmikant V.; Engelhard, Mark H.; Nachimuthu, Ponnusamy; Shutthanandan, V.; Wang, Chong M.; Heald, Steve M.; McCready, David E.; Lea, Alan S.; Baer, Donald R.; Chambers, Scott A.

    2007-01-17

    We report a detailed study of chromium solubility and secondary phase formation in MOCVD grown (Cr, Zn)O-based films on silicon (100). Simultaneous deposition of 0.15M Cr(TMHD) and 0.025M Zn(TMHD) based precursors in an oxidizing environment with a flow ratio of 1:10 resulted in secondary phase formation rather than uniform Cr doping. Based on several surface and micro-structural techniques, we have identified nano-crystalline ZnCr2O4 and disordered Cr2O3 as the secondary Cr-containing phases that nucleate. Analysis suggests that ZnCr2O4 crystallites are dispersed throughout the film and that disordered Cr2O3 layer may form at the interface. These results reveal a strong tendency for Cr to exist in octahedral, rather than tetrahedral coordination.

  4. Thermal behavior of MOCVD-grown Cu-clusters on ZnO(1010).

    Science.gov (United States)

    Kroll, Martin; Löber, Thomas; Schott, Vadim; Wöll, Christof; Köhler, Ulrich

    2012-02-01

    Scanning tunnelling microscopy (STM) and X-ray photoelectron spectroscopy (XPS, AES) were used to study MOCVD of Cu-clusters on the mixed terminated ZnO(1010) surface in comparison to MBE Cu-deposition. Both deposition methods result in the same Cu cluster morphology. After annealing to 670 K the amount of Cu visible above the oxide surface is found to decrease substantially, indicating a substantial diffusion of Cu atoms inside the ZnO-bulk. The spectroscopic data do not show any evidence for changes in the Cu oxidation state during thermal treatment up to 770 K.

  5. High quality GaN-based LED epitaxial layers grown in a homemade MOCVD system

    Institute of Scientific and Technical Information of China (English)

    Yin Haibo; Wang Xiaoliang; Ran Junxue; Hu Guoxin; Zhang Lu; Xiao Hongling; Li Jing; Li Jinmin

    2011-01-01

    A homemade 7 × 2 inch MOCVD system is presented.With this system,high quality GaN epitaxial layers,InGaN/GaN multi-quantum wells and blue LED structural epitaxial layers have been successfully grown.The non-uniformity of undoped GaN epitaxial layers is as low as 2.86%.Using the LED structural epitaxial layers,blue LED chips with area of 350 × 350μm2 were fabricated.Under 20 mA injection current,the optical output power of the blue LED is 8.62 mW.

  6. Microstructure, optical and electrical properties of Al-doped ZnO films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Su, Jianfeng, E-mail: sujianfengvy@gmail.com [Department of Mathematics and Physics, Luoyang Institute of Science and Technology, Luoyang 471023 (China); Tang, Chunjuan; Niu, Qiang; Zang, Chunhe; Zhang, Yongsheng [Department of Mathematics and Physics, Luoyang Institute of Science and Technology, Luoyang 471023 (China); Fu, Zhuxi [Department of Physics, University of Science and Technology of China, Hefei 230026 (China)

    2012-09-01

    Highlights: Black-Right-Pointing-Pointer Al-doped ZnO films were grown on quartz substrates by MOCVD. Black-Right-Pointing-Pointer The preferred orientation of ZnO films decreased with the increase of Al content. Black-Right-Pointing-Pointer Decomposition products of TMA bringing down the surface activity of ZnO grains. Black-Right-Pointing-Pointer UV emission peak initially red-shifted and then blue-shifted as increasing Al content. Black-Right-Pointing-Pointer Low electrical resistivity of Al-doped ZnO films was obtained. - Abstract: Al-doped ZnO films were grown on quartz substrates by MOCVD. A systematical and detailed study about the effect of Al content on structural, optical and electrical properties were discussed. XRD measurements revealed that the preferred orientation of ZnO films decreased with the increase of Al content. AFM images indicated that the TMA molecules or their decomposition products bringing down the surface activity of ZnO grains, and so grain growth is inhibited. By the band tail states and the quantum confinement effect, the UV emission peak initially red-shifted and then blue-shifted. All Al-doped samples demonstrated more than 80% of the optical transparency in the visible region. Low electrical resistivity of Al-doped ZnO films was obtained. However, due to defects and grain boundary scattering which caused by Al doping, the hall mobility is increased initially and then decreased.

  7. Semiconductor Laser Diode Arrays by MOCVD (Metalorganic Chemical Vapor Deposition)

    Science.gov (United States)

    1987-09-01

    Roberts. N. J1. Mason. and M. Robinson, J. Cryst. Growth 68, 422 (1984). ’M. R. Leys. C. van Opdorp. M. P. A. .’iegers, and H. J. Talen -van der Mheen...geometry effects is and superlattices has been dominated obtained by including one measured by the MOCVD growth technology . data point in the analysis...Dapkus, Gallium : Arsenide Technology , D.K. Ferry, Ed., tices i Howard W. Sams and Co., Indianapolis, hetero- 1985, p. 79. s is nec- G . 4. G. Costrini and

  8. Investigation of the optimal annealing temperature for the enhanced thermoelectric properties of MOCVD-grown ZnO films

    Science.gov (United States)

    Mahmood, K.; Ali, A.; Arshad, M. I.; Ajaz un Nabi, M.; Amin, N.; Faraz Murtaza, S.; Rabia, S.; Azhar Khan, M.

    2017-04-01

    In this study, we demonstrate the optimization of the annealing temperature for enhanced thermoelectric properties of ZnO. Thin films of ZnO are grown on a sapphire substrate using the metal organic chemical Vapor Deposition (MOCVD) technique. The grown films are annealed in an oxygen environment at 600-1000°C, with a step of 100°C for one hour. Seebeck measurements at room temperature revealed that the Seebeck coefficient of the sample that was not annealed was 152 μV/K, having a carrier concentration of N D 1.46 × 1018 cm-3. The Seebeck coefficient of the annealed films increased from 212 to 415 μV/K up to 900°C and then decreased at 1000°C. The power factor is calculated and found to have an increasing trend with the annealing temperature. This observation is explained by the theory of Johnson and Lark-Horovitz that thermoelectric properties are enhanced by improving the structure of ZnO thin films. The Hall measurements and PL data strongly justify the proposed argument.

  9. Optical and X-ray studies of MOCVD-grown InGaN epilayers with low indium concentration

    Science.gov (United States)

    Park, Gil; Hwang, Seon-Ju; Shee, Sang-Kee; Sugahara, Tomoya; Lam, Jack; Gainer, Gordon; Song, Jin-Joo; Sakai, S.

    2001-03-01

    Optical and X-ray studies of MOCVD-grown InGaN epilayers with low indium concentration G. H. Park, S. J. Hwang, S. K. Shee, T. Sugahara, J. B. Lam, G. H. Gainer and J. J. Song, Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, OK 74078, USA; S. Sakai, Electrical and Electronic Department, University of Tokushima, Tokushima, Japan. In_xGa_1-xN epilayers with low indium concentration (x < 5%) were grown by low pressure metalorganic chemical vapor deposition on (0001) sapphire. These samples were characterized by optical techniques and high-resolution X-ray diffraction. Photoluminescence (PL) and stimulated emission (SE) were measured. The PL intensity of the InGaN epilayers is much higher than that of GaN, even for very small indium concentrations. The PL peaks show the S-shaped temperature dependence, and the stimulated emission threshold is also temperature dependent. The PL and SE also vary greatly with indium concentration. These observations indicate that the way indium incorporates into GaN varies with In concentration. The structural characteristics will be discussed in light of their possible relation to the optical characteristics. This work is supported by ONR, BMDO, and AFOSR.

  10. Structural and Optical Properties of ZnO Films with Different Thicknesses Grown on Sapphire by MOCVD

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    ZnO(002) films with different thicknesses, grown on Al2O3 (006) substrates by metal-organic chemical vapor deposition( MOCVD), were etched by Ar ion beams. The samples were examined by D8 X-ray diffraction, scanning electron microscopy(SEM), and photoluminescence (PL) spectrometry. The structural properties vary with the increasing thickness of the films. When the film thickness is thin, the phi(Φ) scanning curves for ZnO(103) and sapphire(116) substrate show the existence of two kinds of orientation relationships between ZnO films and sapphire,which are ZnO(002)//Al2O3 (006), ZnO(100)//Al2O3 (110) and ZnO(002)//Al2O3 (006), ZnO(110)//Al2O3(110). When the thickness increases to 500 nm there is only one orientation relationship, which is ZnO(002)//Al2O3 (006), ZnO [ 100 ]//Al2O3[ 110 ]. Their photoluminescence (PL) spectra at room temperature show that the optical properties of ZnO films have been greatly improved when increasing the thickness of films is increased.

  11. Influence of different carrier gases on the properties of ZnO films grown by MOCVD

    Directory of Open Access Journals (Sweden)

    Wang, Jinzhong

    2008-08-01

    Full Text Available ZnO films were grown on sapphire (001 substrate by atmospheric MOCVD using diethyl zinc and tertiary butanol precursors. The influence of different carrier gases (H2 and He on the properties was analyzed by their structural (XRD, microstructural (SEM and compositional (SIMS characterization. The intensity of the strongest diffraction peak from ZnO (002 plane was increased by about 2 orders of magnitude when He is used as carrier gas, indicating the significant enhancement in crystallinity. The surface of the samples grown using H2 and He carrier gases was composed of leaf-like and spherical grains respectively. Hydrogen [H] content in the film grown using H2 is higher than that using He, indicating that the [H] was influenced by the H2 carrier gas. Ultraviolet emission dominates the low temperature PL spectra. The emission from ZnO films grown using He show higher optical quality and more emission centers.

    Se depositaron películas de ZnO sobre sustratos de zafiro (001 utilizando dietil zinc y butanol terciario como precursores. La influencia de los diferentes gases portadores (H2 y He sobre las propiedades se estudió mediante la caracterización estructural (XRD, microestructural (SEM y composicional (SIMS. La intensidad del pico de difracción más importante del plano (002 del ZnO aumentó en dos órdenes de magnitud cuando se utiliza He como gas portador indicando un incremento significativo de la cristalinidad. La superficie de las muestras crecidas utilizando H2 y He está formada por granos en forma de hoja y de forma esférica respectivamente. El contenido en hidrógeno (H en la película es mayor cuando se utiliza H2 que cuando se utiliza He, indicando que la cantidad de hidrógeno está influenciada por el H2 del gas portador. La emisión ultravioleta domina el espectro PL de baja temperatura. La emisión de las películas de ZnO utilizando

  12. Study of carrier recombination transient characteristics in MOCVD grown GaN dependent on layer thickness

    Directory of Open Access Journals (Sweden)

    E. Gaubas

    2013-11-01

    Full Text Available The MOCVD grown GaN epi-layers of different thickness have been examined in order to clarify a role of surface recombination, to separate an impact of radiative and non-radiative recombination and disorder factors. The microwave probed –photoconductivity (MW-PC and spectrally resolved photo-luminescence (PL transients were simultaneously recorded under ultraviolet (UV light 354 nm pulsed 500 ps excitation. The MW-PC transients exhibited the carrier decay components associated with carrier decay within micro-crystals and the disordered structure on the periphery areas surrounding crystalline columns. Three PL bands were resolved within PL spectrum, namely, the exciton ascribed UV-PL band edge for hν>3.3 eV, blue B-PL band for 2.5 < hν < 3.0 eV and yellow Y-PL band with hν < 2.4 eV. It has been obtained that intensity of UV-PL band increases with excitation density, while intensity of B-PL band is nearly invariant. However, intensity of the Y-PL increases with reduction of the excitation density. The Y-PL can be associated with trapping centers. A reduction of UV excitation density leads to a decrease of the relative amplitude of the asymptotic component within the MW-PC transients and to an increase of the amplitude as well as duration of the yellow spectral band (Y-PL asymptotic component. Fractional index α with values 0.5 < α < 0.8 was evaluated for the stretched-exponent component which fits the experimental transients determined by the disordered structure ascribed to the periphery areas surrounding the crystalline columns.

  13. Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (100) substrates by using MOCVD

    Institute of Scientific and Technical Information of China (English)

    Liang Song; Zhu Hong-Liang; Pan Jiao-Qing; Wang Wei

    2006-01-01

    Self-assembled InAs quantum dots (QDs) are grown on vicinal GaAs (100) substrates by using metal-organic chemical vapour deposition (MOCVD). An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs (100) substrates. This trend is explained by taking into account the presence of multiatomic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs(100) substrates are also studied by photoluminescence (PL) . It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.

  14. Photoluminescence study of ZnO nanostructures grown on silicon by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Biethan, J.-P., E-mail: biethan@hfe.tu-darmstadt.de [Department of High Frequency Electronics, Technische Universitaet Darmstadt, Merckstr. 25, Darmstadt 64283 (Germany); Sirkeli, V.P., E-mail: vsirkeli@yahoo.com [Department of Physics, Moldova State University, A. Mateevici str. 60, MD-2009 Chisinau, Republic of Moldova (Moldova, Republic of); Department of Mathematics and Computer Science, Comrat State University, Galatsan str. 17, MD-3800 Comrat, Republic of Moldova (Moldova, Republic of); Considine, L. [Department of High Frequency Electronics, Technische Universitaet Darmstadt, Merckstr. 25, Darmstadt 64283 (Germany); Nedeoglo, D.D. [Department of Physics, Moldova State University, A. Mateevici str. 60, MD-2009 Chisinau, Republic of Moldova (Moldova, Republic of); Pavlidis, D., E-mail: pavlidis@hfe.tu-darmstadt.de [Department of High Frequency Electronics, Technische Universitaet Darmstadt, Merckstr. 25, Darmstadt 64283 (Germany); Hartnagel, H.L., E-mail: hartnagel@mwe.tu-darmstadt.de [Department of High Frequency Electronics, Technische Universitaet Darmstadt, Merckstr. 25, Darmstadt 64283 (Germany); Department of Microwave Electronics, Technische Universitaet Darmstadt, Merckstr. 25, Darmstadt 64283 (Germany)

    2012-05-15

    Highlights: Black-Right-Pointing-Pointer The size and shape of ZnO nanostructures depend on growth temperature. Black-Right-Pointing-Pointer The size reduction of ZnO nanostructures causes a UV shift of the edge-band PL line. Black-Right-Pointing-Pointer A higher growth temperature can decrease the number of deep level defects. Black-Right-Pointing-Pointer Hydrogen appears to be an impurity donor in the ZnO nanostructures. Black-Right-Pointing-Pointer The PL line at 373.7 nm can be attributed to oxygen vacancies. - Abstract: ZnO nanostructures with a size ranging from 20 to 100 nm were successfully deposited on (1 0 0)-Si substrates at different temperatures (500-800 Degree-Sign C) using MOCVD. It could be confirmed that the size of ZnO nanostructures decreased with increasing growth temperature. From photoluminescence (PL) studies it was found, that intensive band-edge PL of ZnO nanostructures consists of emission lines with maxima at 368.6 nm, 370.1 nm, 373.7 nm, 383.9 nm, 391.7 nm, 400.7 nm and 412 nm. These lines can be dedicated to free excitons and impurity donor-bound excitons, where hydrogen acts as donor impurity with an activation energy of about 65 meV. A UV shift of the band-edge PL line with increasing growth temperature of ZnO nanostructures was observed as a result of the quantum confinement effect. The results suggest that an increase of growth temperature leads to increased band-edge PL intensity. Moreover, the ratio of band-edge PL intensity to green- (red-) band intensity also increases, indicating better crystalline quality of ZnO nanostructures with increasing growth temperature.

  15. Thermodynamic modeling to analyse composition of carbonaceous coatings of MnO and other oxides of manganese grown by MOCVD

    Indian Academy of Sciences (India)

    Sukanya Dhar; A Varade; S A Shivashankar

    2011-02-01

    Equilibrium thermodynamic analysis has been applied to the low-pressure MOCVD process using manganese acetylacetonate as the precursor. ``CVD phase stability diagrams” have been constructed separately for the processes carried out in argon and oxygen ambient, depicting the compositions of the resulting films as functions of CVD parameters. For the process conduced in argon ambient, the analysis predicts the simultaneous deposition of MnO and elemental carbon in 1:3 molar proportion, over a range of temperatures. The analysis predicts also that, if CVD is carried out in oxygen ambient, even a very low flow of oxygen leads to the complete absence of carbon in the film deposited oxygen, with greater oxygen flow resulting in the simultaneous deposition of two different manganese oxides under certain conditions. The results of thermodynamic modeling have been verified quantitatively for lowpressure CVD conducted in argon ambient. Indeed, the large excess of carbon in the deposit is found to constitute a MnO/C nanocomposite, the associated cauliflower-like morphology making it a promising candidate for electrode material in supercapacitors. CVD carried out in oxygen flow, under specific conditions, leads to the deposition of more than one manganese oxide, as expected from thermodynamic analysis (and forming an oxide–oxide nanocomposite). These results together demonstrate that thermodynamic analysis of the MOCVD process can be employed to synthesize thin films in a predictive manner, thus avoiding the inefficient trial-and-error method usually associated with MOCVD process development. The prospect of developing thin films of novel compositions and characteristics in a predictive manner, through the appropriate choice of CVD precursors and process conditions, emerges from the present work.

  16. Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiN_x mask layer by MOCVD

    Institute of Scientific and Technical Information of China (English)

    NG; KaiWei; LAU; KeiMay

    2009-01-01

    In this paper,1 μm n-GaN was grown by using varied and fixed ammonia flow (NH3) on SiNx mask layer on Si(111) substrate using metal organic chemical vapor deposition (MOCVD). In-situ optical reflectivity traces of GaN growth show that the three-to two-dimensional process has been prolonged by using varied ammonia flow on SiNx mask layer method compared with that grown by fixing ammonia flow. Structural and optical properties were characterized by high-resolution X-ray diffraction and photolu-minescence,and compared with the sample grown by fixing ammonia flow,GaN grown using the varied ammonia flow on SiNx mask layer showed better structure and optical quality. It was assumed that the low NH3 flow in the initial growth stage considerably increased the GaN island density on the nano-porous SiNx layer by enhancing vertical growth. Lateral growth was significantly favored by high NH3 flow in the subsequent step. As a result,the improved crystal and optical quality was achieved utilizing NH3 flow modulation for GaN buffer growth on Si(111) substrate.

  17. MOCVD and ALD of rare earth containing multifunctional materials. From precursor chemistry to thin film deposition and applications

    Energy Technology Data Exchange (ETDEWEB)

    Milanov, Andrian Petrov

    2010-03-26

    The present thesis deals with the development of metal-organic complexes of rare elements. They should be used as novel precursors for the production of rare earth thin films by metal-organic chemical vapor deposition (MOCVD) and Atomic Layer Deposition (ALD). Within the work two precursor classes were examined, the tris-Malonato-complexes as well as the tris-Guanidinato-complexes of a series of rare earth metals. The latter showed excellent properties regarding to their volatility, their thermal stability, the defined decomposition and high reactivity towards water. They have been successfully used as precursors for the MOCVD of rare earth oxide layers. By using of a gadolinium guanidinate it could also be shown that the rare earth guanidinates are promising precursors for ALD of rare earth oxide and MOCVD of rare earth nitride layers. [German] Die vorliegende Dissertation beschaeftigt sich mit der Entwicklung von metallorganischen Komplexen der Seltenerd-Elemente. Diese sollten als neuartigen Precursoren fuer die Erzeugung von seltenerdhaltigen Duennschichten mittels Metallorganischer Chemischer Dampfabscheidung (MOCVD) und Atomic Layer Deposition (ALD) eingesetzt werden. Innerhalb der Arbeit wurden zwei Precursorklassen untersucht, die Tris-Malonato-Komplexe sowie die Tris-Gunanidinato-Komplexe einer Reihe von Seltenerdmetallen. Letztere zeigten hervorragende Eigenschaften bezueglich ihrer Fluechtigkeit, ihrer thermischen Stabilitaet, der definierten Zersetzung und der hohen Reaktivitaet gegenueber Wasser. Sie wurden erfolgreich als Precursoren fuer die MOCVD von Seltenerd-Oxid-Schichten eingesetzt. Unter Verwendung eines Gadolinium Guanidinats konnte ausserdem gezeigt werden, dass die Seltenerd-Guanidinate vielversprechende Precursoren fuer die ALD von Seltenerd-Oxid-Schichten sowie die MOCVD von Seltenerd-Nitrid-Schichten darstellen.

  18. Surface morphologies of MOCVD-grown GaN films on sapphire studied by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, J.; Reddic, J.E.; Sinha, M.; Ricker, W.S.; Karlinsey, J.; Yang, J.-W.; Khan, M.A.; Chen, D.A

    2002-12-30

    The surface morphologies of MOCVD GaN films grown on sapphire substrates have been investigated by scanning tunneling microscopy (STM). High quality STM images could not be obtained prior to cleaning the les in HF, hot HCl or 2 M NaOH. STM images of the GaN films showed that the surfaces consisted of curved step edges and interlocking terraces, which were roughly 224 nm wide. Surface pits approximately 2-5 nm deep and 50-80 nm wide were observed on the GaN films, and these pits were preferentially located at a juncture between two step edges. Previous studies in the literature involving MOCVD-grown GaN on sapphire have demonstrated that the surface pits are associated with screw-component threading dislocations. Therefore, the number of screw-component threading dislocations in these GaN films is estimated as 6.3x10{sup 8} cm{sup -2} from the number surface pits observed in the STM images. X-ray photoelectron studies indicated that the major surface contaminants before cleaning were carbon and oxygen. Treatment in HF or HCl removed oxygen from the surface while treatment in NaOH was more effective at removing surface carbon.

  19. DLTS study of n-type GaN grown by MOCVD on GaN substrates

    Science.gov (United States)

    Tokuda, Y.; Matsuoka, Y.; Ueda, H.; Ishiguro, O.; Soejima, N.; Kachi, T.

    2006-10-01

    Electron traps in n-type GaN layers grown homoepitaxially by MOCVD on free-standing GaN substrates have been characterized using DLTS for vertical Schottky diodes. Two free-standing HVPE GaN substrates (A and B), obtained from two different sources, are used. The Si-doped GaN layers with the thickness of 5 μm are grown on an area of 0.9×0.9 cm 2 of substrate A and on an area of 1×1 cm 2 of substrate B. Two traps labeled B1 (Ec-0.23 eV) and B2 (Ec-0.58 eV) are observed with trap B2 dominant in GaN on both substrates. There exist no dislocation-related traps which have been previously observed in MOCVD GaN on sapphire. This might be correlated to the reduction in dislocation density due to the homoepitaxial growth. However, it is found that there is a large variation, more than an order of magnitude, in trap B2 concentration and that the B2 spatial distributions are different between the two substrates used.

  20. Effect of oxygen content on the structural and optical properties of ZnO films grown by atmospheric pressure MOCVD

    Institute of Scientific and Technical Information of China (English)

    Sajjad Hussain; Yaqoob Khan; Volodymyr Khranovskyy; Riaz Muhammad; Rositza Yakimova

    2013-01-01

    Atmospheric pressure MOCVD was used to deposit ZnO layers on sapphire and homoepitaxial template under different oxygen flow rates. Oxygen content affects the lattice constant value and texture coefficient of the films as evidenced by the y-2y peaks position and their intensity. Films deposited at lower oxygen flow rate possess higher value of strain and stresses. ZnO films deposited at high oxygen flow rates show intense UV emissions while samples prepared under oxygen deficient conditions exhibited defect related emission along with UV luminescence. The results are compared to the ZnO films deposited homoepitaxially on annealed ZnO samples. The data obtained suggest that ZnO stoichiometry is responsible for the structural and optical quality of ZnO films.

  1. Annealing behavior of hexagonal phase content in cubic GaN thin films grown on GaAs (001) by MOCVD

    Institute of Scientific and Technical Information of China (English)

    孙小玲; 杨辉; 王玉田; 李国华; 郑联喜; 李建斌; 徐大鹏; 王占国

    1999-01-01

    The annealing behavior of the hexagonal phase content in cubic GaN (c-GaN) thin films grown on GaAs (001) by MOCVD is reported. C-GaN thin films are grown on GaAs (001) substrates by metalorganic chemical vapor deposition (MOCVD). High temperature annealing is employed to treat the as-grown c-GaN thin films. The characterization of the c-GaN films is investigated by photoluminescence (PL) and Raman scattering spectroscopy. The change conditions of the hexagonal phase content in the metastable c-GaN are reported. There is a boundary layer existing in the c-GaN/GaAs film. When being annealed at high temperature, the intensity of the TOB and LOB phonon modes from the boundary layer weakens while that of the E2 phonon mode from the hexagonal phase increases. The content change of hexagonal phase has closer relationship with annealing temperature than with annealing time period.

  2. Surface morphology and photoluminescence studies of Sb-doped ZnO layers grown using MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Sartel, Corinne; Haneche, Nadia; Jomard, Francois; Lusson, Alain; Vilar, Christele; Laroche, Jean-Michel; Galtier, Pierre; Sallet, Vincent [Groupe d' Etude de la Matiere Condensee (GEMaC), CNRS-Universite de Versailles Saint Quentin, Meudon (France)

    2010-07-15

    ZnO and ZnO:Sb films were deposited using low pressure metal organic chemical vapor deposition on C- and R-oriented sapphire and O-polar ZnO substrates. Surface morphologies were studied using scanning electron microscopy. Whereas ZnO films grown on C-sapphire show a rough surface and hexagonal rods, the doped ZnO:Sb layers exhibit a relatively smoother surface, indicating a possible surfactant effect of antimony. The secondary ion mass spectrometry measurements permit to determine the antimony profile in the doped layers. Sb concentrations from 10{sup 18} to 10{sup 20} at/cm{sup 3} were measured, depending on the growth conditions and substrate nature. Photoluminescence spectra exhibit donor-acceptor pair emission at 3.22 eV. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  3. Growth and characterization of germanium epitaxial film on silicon (001 with germane precursor in metal organic chemical vapour deposition (MOCVD chamber

    Directory of Open Access Journals (Sweden)

    Kwang Hong Lee

    2013-09-01

    Full Text Available The quality of germanium (Ge epitaxial film grown directly on a silicon (Si (001 substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD system is studied. The growth sequence consists of several steps at low temperature (LT at 400 °C, intermediate temperature ramp (LT-HT of ∼10 °C/min and high temperature (HT at 600 °C. This is followed by post-growth annealing in hydrogen at temperature ranging from 650 to 825 °C. The Ge epitaxial film of thickness ∼ 1 μm experiences thermally induced tensile strain of 0.11 % with a treading dislocation density (TDD of ∼107/cm2 and the root-mean-square (RMS roughness of ∼ 0.75 nm. The benefit of growing Ge epitaxial film using MOCVD is that the subsequent III-V materials can be grown in-situ without the need of breaking the vacuum hence it is manufacturing worthy.

  4. 1.3 m m InGaAsN/ GaAs Lasers Grown by MOCVD Using TBAs and DMHy Sources

    Institute of Scientific and Technical Information of China (English)

    Gray Lin; C. M. Lu; C. H. Chiou; I. F. Chen; T. D. Lee; J. Y. Chi; D.A. Livshits

    2003-01-01

    We have demonstrated InGaAsN/ GaAs single quantum well (SQW) lasers grown by MOCVD using TBAs and DMHy sources. For un-buffer-strained InGaAsN/ GaAs system, our SQW lasers of 1.3 m m range is among the best in terms of transparency and threshold current density.

  5. MOCVD of Cobalt Oxide Using Co-Actylacetonate As Precursor: Thin Film Deposition and Study of Physical Properties

    Directory of Open Access Journals (Sweden)

    S.M. Jogade

    2011-01-01

    Full Text Available Metal Organic Chemical Vapor Deposition (MOCVD is the deposition method of choice for achieving conformal uniform (composition and thickness continuous thin films over the micron geometry topology necessary for implementing advanced devices. Thin films of cobalt oxide were prepared by MOCVD technique on alumina substrate using a cobalt acetylacetonate as precursor. The thin films of cobalt oxide were deposited on alumina substrate by MOCVD at four different temperatures viz 490 °C, 515 °C, 535 °C, 565 °C. The as deposited samples are uniform and well adherent to the substrate. Thickness of the cobalt oxide film is maximum at temperature 535 °C. The crystalline and phase composition of films were examined by X-ray diffraction. The XRD reveals the crystalline nature with cubic in structure for all the samples. The surface morphology of the films were studied by scanning electron microscopy. The SEM image shows well defined closely packed grains for all the samples. The hexagonal shape of grains are observed for sample at temperature 515 °C. Raman spectroscopy shows Fm3m, 225 space groups for cobalt oxide thin films deposited on alumina substrate.

  6. Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arcmin, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 ℃ was measured to be approximate 109 and 106 Ω·cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.

  7. Thermal activation of nitrogen acceptors in ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Dangbegnon, J.K.; Talla, K.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth (South Africa)

    2010-06-15

    Nitrogen doping in ZnO is inhibited by spontaneous formation of compensating defects. Perfect control of the nitrogen doping concentration is required, since a high concentration of nitrogen could induce the formation of donor defects involving nitrogen. In this work, the effect of post-growth annealing in oxygen ambient on ZnO thin films grown by Metalorganic Chemical Vapor Deposition, using NO as both oxidant and nitrogen dopant, is studied. After annealing at 700 C and above, low-temperature photoluminescence shows the appearance of a transition at {proportional_to}3.23 eV which is interpreted as pair emission involving a nitrogen acceptor. A second transition at {proportional_to}3.15 eV is also discussed. This work suggests annealing as a potential means for p-type doping using nitrogen (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  8. Characterisation of titanium nitride films obtained by metalorganic chemical vapor deposition (MOCVD); Caracterizacao de filmes de nitreto de titanio obtidos por MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pillis, M.F., E-mail: mfpillis@ipen.b [Instituto de Pesquisas Energeticas e Nucleares (CCTM/IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Ciencia e Tecnologia de Materiais; Franco, A.C. [Universidade de Sao Paulo (IF/USP), SP (Brazil). Inst. de Fisica; Araujo, E.G. de [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil); Sacilotti, M. [Universidade Federal de Pernambuco (IF/UFPE), Recife, PE (Brazil). Inst. de Fisica; Fundacao de Amparo a Ciencia e Tecnologia de Pernambuco (FACEPE), Recife, PE (Brazil)

    2009-07-01

    Ceramic coatings have been widely used as protective coating to improve the life of cutting tools, for corrosion protection and in microelectronics, optical and medical areas. Transition metals nitrides are of special interest due to its high hardness and thermal stability. In this work thin films of titanium nitride were obtained by MOCVD (metalorganic chemical vapor deposition) process. The tests were carried out for 1h at 700 deg C under 80 and 100 mbar of pressure. The characterization was made by using scanning electron microscopy coupled with dispersive energy analysis, and X-ray diffraction. Preliminary results suggested that Ti{sub 2}N phase was formed and that the growth rate varied between 4 and 13 nm/min according to the process parameter considered. (author)

  9. Structural, morphological and optical properties of Cd doped ZnO film grown on a- and r-plane sapphire substrate by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Fouzri, A., E-mail: Fouzri.Afif@gmail.com [Institut Supérieur des Sciences Appliquées et de Technologie de Sousse, Université de Sousse (Tunisia); Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche, High resolution X-ray diffractometer, Département de Physique, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Boukadhaba, M.A. [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche, High resolution X-ray diffractometer, Département de Physique, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Touré, A. [Unité de recherche hétéroepitaxie et ses applications, Département de Physique, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Sakly, N. [Laboratoire Physico-chimie des Interfaces, Département de Physique, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); and others

    2014-08-30

    Highlights: • Cd doped ZnO films have been grown on (1 1 −20) (a-plane) and (0 1 −1 2) (r-plane) sapphire substrate by MOCVD. • A maximum cadmium incorporation of 8.5% and 11.2% has been, respectively, determined for films deposited on a- and r-plane sapphire. • XRD study revealed that all films had wurtzite phase but solid solution grown on a-plane sapphire are polycrystalline with a preferred orientation along the [0 0 0 1] and a-plane (1 1 −2 0) film are epitaxially grown on r-plane-sapphire. • The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.916 eV for the highest Cd content (11.2%) at low temperature (20 K). - Abstract: Cd doped ZnO films have been grown on (1 1 −2 0) (a-plane) and (0 1 −1 2) (r-plane) sapphire substrate by metal organic chemical vapor deposition. A maximum cadmium incorporation of 8.5% and 11.2% has been, respectively, determined for films deposited on a- and r-plane sapphire. The optical transmission spectra and energy band-gap equation established by Makino et al. were used to estimate the cadmium mole fraction in layer. Structural, morphological and optical properties of these films were examined using high resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and room and low temperature photoluminescence (Pl) as Cd incorporation and employed substrate. X-ray diffraction study revealed that all films had wurtzite phase but solid solution grown on a-plane sapphire are polycrystalline with a preferred orientation along the [0 0 0 1] direction and a-plane (1 1 −2 0) film are epitaxially grown on r-plane sapphire. AFM image show significant differences between morphologies depending on orientation sapphire substrate but no significant differences on surface roughness have been found. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.916 eV for the highest Cd content (11.2%) at

  10. Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    Tao Zhikuo; Simon P Ringer; Zhang Rong; Xiu Xiangqian; Cui Xugao; Li Li; Li Xin; Xie ZiLi; Zheng Youdou; Zheng Rongkun

    2012-01-01

    We have grown transition metal (Fe,Mn ) doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition,By varying the flow of the metal precursor,a series of samples with different ion concentrations are synthesized.Microstructural properties are characterized by using a high-resolution transmission electron microscope.For Fe over-doped GaN samples,hexagonal Fe3N closters are observed with Fe3N (0002) parallel to GaN (0002) while for Mn over-doped GaN,hexagonal Mn6N2.58 phases are observed with Mn6N2.58(0002)parallel to GaN (0002).In addition,with higher concentration ions doping into the lattice matrix,the partial lattice orientation is distorted,leading to the tilt of GaN (0002) planes.The magnetization of the Fe over-doped GaN sample is increased,which is ascribed to the participation of ferromagnetic iron and Fe3N.The Mn over-doped sample displays very weak ferromagnetic behavior,which probably originates from the Mn6N2.58.

  11. GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD

    Science.gov (United States)

    Heidelberger, Christopher; Fitzgerald, Eugene A.

    2017-01-01

    Heterojunction bipolar transistors with GaAsxP1-x bases and collectors and InyGa1-yP emitters were grown on GaAs substrates via metalorganic chemical vapor deposition, fabricated using conventional techniques, and electrically tested. Four different GaAsxP1-x compositions were used, ranging from x = 0.825 to x = 1 (GaAs), while the InyGa1-yP composition was adjusted to remain lattice-matched to the GaAsP. DC gain close to or exceeding 100 is measured for 60 μm diameter devices of all compositions. Physical mechanisms governing base current and therefore current gain are investigated. The collector current is determined not to be affected by the barrier caused by the conduction band offset between the InGaP emitter and GaAsP base. While the collector current for the GaAs/InGaP devices is well-predicted by diffusion of electrons across the quasi-neutral base, the collector current of the GaAsP/InGaP devices exceeds this estimate by an order of magnitude. This results in higher transconductance for GaAsP/InGaP than would be estimated from known material properties.

  12. Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition

    Institute of Scientific and Technical Information of China (English)

    Liu Ci-Hui; Liu Bing-Ce; Fu Zhu-Xi

    2008-01-01

    ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition (MOCVD) at different total gas flow rates. The current versus voltage and temperature (I - V - T) characteristics, the deep-level transient spectroscopy (DLTS) and the photoluminescence (PL) spectra of the samples were measured. DLTS shows two deep-level centres of E1 (EC-0.13±0.02 eV) and E2 (EC-0.43±0.05eV) in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at EC-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.

  13. Alloying, co-doping, and annealing effects on the magnetic and optical properties of MOCVD-grown Ga{sub 1-x}Mn {sub x}N

    Energy Technology Data Exchange (ETDEWEB)

    Kane, Matthew H. [Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332 (United States); Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, GA 30332 (United States); Strassburg, Martin [Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332 (United States); Georgia Institute of Technology, School of Chemistry and Biochemistry, Atlanta, GA 30332 (United States); Asghar, Ali [Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332 (United States); Fenwick, William E. [Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332 (United States); Senawiratne, Jayantha [Georgia State University, Department of Physics and Astronomy, Atlanta, GA 30303 (United States); Song, Qing [Georgia Institute of Technology, School of Chemistry and Biochemistry, Atlanta, GA 30332 (United States); Summers, Christopher J. [Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, GA 30332 (United States); Zhang, Z. John [Georgia Institute of Technology, School of Chemistry and Biochemistry, Atlanta, GA 30332 (United States); Dietz, Nikolaus [Georgia State University, Department of Physics and Astronomy, Atlanta, GA 30303 (United States); Ferguson, Ian T. [Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332 (United States)]. E-mail: ianf@ece.gatech.edu

    2006-01-25

    Recent theoretical work for Ga{sub 1-x}Mn {sub x}N predicts ferromagnetism in this materials system with Curie temperatures above room temperature. Ferromagnetic behavior observed in Ga{sub 1-x}Mn {sub x}N is still controversial, as there are conflicting experimental reports owing to the disparity in crystalline quality and phase purity of Ga{sub 1-x}Mn {sub x}N produced by different methods. In this work, metal-organic chemical vapor deposition (MOCVD) has been used to grow high-quality epitaxial films of Ga{sub 1-x}Mn {sub x}N of varying thickness and manganese doping levels using Cp{sub 2}Mn as the Mn source. Crystalline quality and phase purity were determined by high-resolution X-ray diffraction, indicating that no macroscopic second phases are formed. Atomic force microscopy revealed MOCVD-like step flow growth patterns and a mean surface roughness of 0.378 nm in optimally grown films, which is close to that from the as-grown template layer of 0.330 nm. No change in the growth mechanism and morphology with Mn incorporation is observed. A uniform Mn concentration in the epitaxial layers is confirmed by secondary ion mass spectroscopy. SQUID measurements showed an apparent room temperature ferromagnetic hysteresis with saturation magnetizations of over 2 {mu}{sub B}/Mn at x = 0.008, which decreases with increasing Mn incorporation. Upon high-temperature annealing, numerous changes are observed in these properties, including an increase in surface roughness due to surface decomposition and a large decrease in the magnetic signature. A similar decrease in the magnetic signature is observed upon co-doping with the shallow donor silicon during the growth process. These results demonstrate the critical importance of controlling the Fermi level relative to the Mn{sup 2+/3+} acceptor level in Ga{sub 1-x}Mn {sub x}N in order to achieve strong ferromagnetism.

  14. Material growth and characterization of gallium arsenic antimide on gallium arsenide grown by MOCVD for long wavelength laser applications

    Science.gov (United States)

    Noh, Min-Soo

    Due to the demand for faster and higher bit rate optical communication, long wavelength vertical cavity surface emitting laser (VCSEL) has been attracting great interests because of its ability of 2D array application. Although InGaAsP/InP edge emitting lasers (EEL) have been well developed and commercially available, the lack of high contrast distributed Bragg reflector (DBR) for the material system forced to find new active materials that can be grown on GaAs substrate to exploit AlGaAs/GaAs DBR pairs. For the purpose, GaAsSb has been studied as the active material. This dissertation describes and discusses the GaAsSb semiconductor material growth, the optimization of the growth conditions, and the characterization of the laser devices fabricated from GaAsSb QW structures. Based on the optimal growth conditions, EELs operating at room temperature in CW mode at the wavelength of 1.27 mum have been demonstrated from the GaAsSb QW structure with GaAsP barriers grown monolithically by MOCVD.

  15. Photoluminescence Properties of Two-dimensional Planar Layer and Three-dimensional Island Layer for ZnO Films Grown Using MOCVD

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    ZnO(002) films with different thicknesses ranging from 7 to 300 nm were grown on sapphire(006) substrates via metal-organic chemical vapor deposition(MOCVD). The two-dimensional(2D) planar layer and the three-dimensional(3D) island layer were studied by using of X-ray diffraction(XRD) rocking curves and atomic force microscopy(AFM). The room temperature photoluminescence(PL) spectra show a blue shift of the peak positions of the ultraviolet(UV) emission with increasing film thickness. The blue shift is remarkably high(393-380 nm) when an increase in film thickness(7-15 nm) is accompanied by the change of structure from a2D planar layer to a 3D island layer. The PL spectra at 77 K also indicate that there are different transition mechanisms in the film thickness from a2D planar layer to a 3D island layer near the2D layer region.

  16. Effects of high-temperature annealing on magnetic properties of V-doped GaN thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Souissi, M., E-mail: mnawer.souissi@fsm.rnu.tn [Higher Institute of Computer Sciences and Communication Techniques of Hammam Sousse, Sousse 4011 (Tunisia); Schmerber, G.; Derory, A. [Institut de Physique et Chimie des Materiaux de Strasbourg (IPCMS) UMR7504 CNRS-UDS, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2 (France); El Jani, B. [URHEA, Faculte des Sciences de Monastir, Monastir 5000 (Tunisia)

    2012-08-15

    Metal organic chemical vapor deposition (MOCVD) has been used to grow vanadium-doped GaN (GaN:V) on c-sapphire substrate using VCl{sub 4} as the V source. The as-grown GaN:V exhibited a saturated magnetic moment (M{sub s}) of 0.28 emu/cm{sup 3} at room temperature. Upon high-temperature annealing treatment at 1100 Degree-Sign C for 7 min under N{sub 2} ambient, the M{sub s} of the GaN:V increased by 39.28% to 0.39 emu/cm{sup 3}. We found that rapid thermal annealing leads to a remarkable increase in surface roughness of the V-doped GaN as well as the electron concentration. The annealing also leads to a significant increase in the Curie temperature (T{sub C}), we have identified Curie temperatures about 350 K concluded from the difference between the field-cooled and zero-field-cooled magnetizations. Structure characterization by x-ray diffraction indicated that the ferromagnetic properties are not a result of secondary magnetic phases.

  17. Characterization of Al{sub x}Ga{sub 1-x}As/GaAs heterostructures for single quantum wells grown by a solid arsenic MOCVD system

    Energy Technology Data Exchange (ETDEWEB)

    Castillo-Ojeda, R. [Universidad Politecnica de Pachuca, Km. 20, Rancho Luna, Ex-Hacienda de Santa Barbara, Municipio de Zempoala, Hidalgo 43830 (Mexico); Diaz-Reyes, J., E-mail: jdiazr2001@yahoo.co [Instituto Politecnico Nacional, Centro de Investigacion en Biotecnologia Aplicada, CIBA-IPN, Ex Hacienda de San Juan Molino, Km. 1.5. Tepetitla, Tlaxcala 90700 (Mexico); Galvan-Arellano, M.; Pena-Sierra, R. [CINVESTAV-IPN, Depto. de Ing. Electrica, SEES. Apdo. 14-740, Mexico, D.F. 07000 (Mexico)

    2011-06-15

    This work presents the results of the growth and characterization of Al{sub x}Ga{sub 1-x}As/GaAs multilayer structures obtained in a metallic-arsenic-based-MOCVD system. The main goal is to explore the ability of the growth system to grow high quality multilayer structures like quantum wells. The use of metallic arsenic could introduce important differences in the growth process due to the absence of the hydride group V precursor (AsH{sub 3}), which manifests in the electrical and optical characteristics of both GaAs and Al{sub x}Ga{sub 1-x}As layers. The characterization of these epilayers and structures was performed using low-temperature photoluminescence, Hall effect measurements, X-ray diffraction, Raman spectroscopy, secondary ion mass spectroscopy (SIMS) and Atomic Force Microscopy (AFM). - Research highlights: {yields} This work is reported the growth of AlxGa1-xAs/GaAs/AlxGa1-xAs heterostructures by a solid arsenic based MOCVD system. {yields} The results obtained with this system are comparable with those obtained with the traditional arsine based growth system. {yields} The main limitation of the alternative MOCVD system is related to the lack of monoatomic hydrogen on the growth surface that acts modifying the surface kinetics and enhancing the carbon incorporation. {yields} The experimental results indicate that it can be grown AlxGa1-xAs using elemental arsenic by MOCVD, which can be used to optoelectronic devices.

  18. A Comparison between AlN Films Grown by MOCVD Using Dimethylethylamine Alane and Trimethylaluminium as the Aluminium Precursors

    Institute of Scientific and Technical Information of China (English)

    HU Wei-Guo; PAN Yi; LIU Xiang-Lin; ZHANG Pan-Feng; ZHAO Feng-Ai; JIAO Chun-Mei; WEI Hong-Yuan; ZHANG Ri-Qing; WU Jie-Jun; CONG Guang-Wei

    2007-01-01

    Aluminium nitride (AlN) films grown with dimethylethylamine alane (DMEAA) are compared with the ones grown with trimethylaluminium (TMA). In the high-resolution x-ray diffraction Ω scans, the full width at half maximum (FWHM) of (0002) AlN films grown with DMEAA is about 0.70 deg, while the FWHM of (0002)AlN films grown with TMA is only 0.11 deg. The surface morphologies of the films are different, and the rms roughnesses of the surface are approximately identical. The rms roughness of AlN films grown with DMEAA is 47.4 nm, and grown with TMA is 69.4 nm. Although using DMEAA as the aluminium precursor cannot improve the AlN crystal quality, AlN growth can be reached at low temperature of 673 K. Thus, DMEAA is an alternative aluminium precursor to deposit AlN film at low growth temperatures.

  19. High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer

    Science.gov (United States)

    Lin, Jia-Yong; Pei, Yan-Li; Zhuo, Yi; Chen, Zi-Min; Hu, Rui-Qin; Cai, Guang-Shuo; Wang, Gang

    2016-11-01

    In this study, the high performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with Al-doped ZnO (AZO) transparent conductive layers (TCLs) has been demonstrated. The AZO-TCLs were fabricated on the n+-InGaN contact layer by metal organic chemical vapor deposition (MOCVD) using H2O as an oxidizer at temperatures as low as 400 °C without any post-deposition annealing. It shows a high transparency (98%), low resistivity (510-4 Ω·cm), and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer. A forward voltage of 2.82 V @ 20 mA was obtained. Most importantly, the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL (LED-III), and by 28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O2 as an oxidizer (LED-II), respectively. The results indicate that the AZO-TCL grown by MOCVD using H2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application. Project supported by the National Natural Science Foundation of China (Grant Nos. 61204091, 61404177, 51402366, and U1201254) and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015B010132006).

  20. Optical characterization of Al sub x Ga sub 1 sub - sub x N alloys grown by MOCVD

    CERN Document Server

    Kim, H S; Li, J; Lin, J Y; Jiang, H

    2000-01-01

    Al sub x Ga sub 1 sub - sub x N alloys with x varied from 0 to 0.35 have been produced on sapphire substrates with GaN buffer layers by using metalorganic chemical vapor deposition (MOCVD), and the optical properties of the Al sub x Ga sub 1 sub - sub x N alloys have been investigated using picosecond time-resolved photoluminescence (PL) spectroscopy at low temperature (10 K). Our results reveal that the PL intensity decreases with increasing of Al content. On the other hand, the PL decay lifetime increases with Al content. These results can be understood in terms of the effects of tail states in the density of states (DOS) due to alloy fluctuation in the Al sub x Ga sub 1 sub - sub x N alloys. The Al content dependence of the energy tail-state distribution parameter, E sub 0 , which is an important parameter for determining the optical and the electrical properties of the AlGaN alloys, has been obtained experimentally.

  1. Effect of bulk growth temperature on antiphase domain boundary annihilation rate in MOCVD-grown GaAs on Si(001)

    Science.gov (United States)

    Barrett, C. S. C.; Martin, T. P.; Bao, X.-Y.; Kennon, E. L.; Gutierrez, L.; Martin, P.; Sanchez, E.; Jones, K. S.

    2016-09-01

    GaAs is a material of interest as a potential buffer layer in future III-V semiconductor-based transistor technologies integrated on Si wafers. The goal of this study was to investigate the effect of growth temperature on the propagation and annihilation of antiphase domain boundaries (APBs) in GaAs films grown on Si(001) by metal-organic chemical vapor deposition (MOCVD). No intentional wafer off-cuts or high temperature pre-growth anneals (>1000 °C) were employed as both of these practices complicate integration with other devices. To evaluate the role of growth temperature on the APB evolution, a 200 nm thick layer of GaAs was grown on the Si at a fixed temperature of 530 °C so that all samples started with the same approximate APB density. Subsequently, 600 nm of GaAs was grown at temperatures varying between 530 °C and 650 °C. Chemical etching combined with scanning electron microscopy (SEM) was used to profile the density of the APBs in each sample as a function of depth. The APB annihilation rate, i.e. the exponential decay rate of APB density with respect to film thickness, increases from 2.6 μm-1 to 10.7 μm-1 as the growth temperature increases from 530 °C to 610 °C and then saturates. The increase in annihilation rate with increasing temperatures suggests that the higher temperatures remove kinetic barriers to the reduction of the overall APB interfacial area. An activation energy of 1.1 eV was extracted using an Arrhenius relationship and likely corresponds to the energy needed for APBs to kink from {110} to higher-index planes, e.g. {112}. Dark field transmission electron microscopy showed that at higher growth temperatures the APBs can shift from vertical {110} habit planes to {112} planes leading to self-annihilation with sufficient thickness.

  2. Surface morphology and composition studies in InGaN/GaN film grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    Tao Tao; Han Ping; Shi Yi; Zheng Youdou; Zhang Zhao; Liu Lian; Su Hui; Xie Zili; Zhang Rong; Liu Bin; Xiu Xiangqian; Li Yi

    2011-01-01

    InGaN filmsweredepositedon(0001)sapphiresubstrates with GaN buffer layers under different growth temperatures by metalorganic chemical vapor deposition.The In-composition of InGaN film was approximately controlled by changing the growth temperature.The connection between the growth temperature,In content,surface morphology and defect formation was obtained by X-ray diffraction,scanning electron microscopy (SEM) and atomic force microscopy (AFM).Meanwhile,by comparing the SEM and AFM surface morphology images,we proposed several models of three different defects and discussed the mechanism of formation.The prominent effect of higher growth temperature on the quality of the InGaN films and defect control were found by studying InGaN films at various growth temperatures.

  3. Friction and wear behavior of nitrogen-doped ZnO thin films deposited via MOCVD under dry contact

    Directory of Open Access Journals (Sweden)

    U.S. Mbamara

    2016-06-01

    Full Text Available Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS and X-ray Diffraction (XRD. The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-face surfaces were examined to assess the wear dimension and failure mechanism. Both friction behavior and wear (in the ball counter-face were observed to be dependent on the crystallinity and thickness of the thin film coatings.

  4. Investigation of H2/CH4 mixed gas plasma post-etching process for ZnO:B front contacts grown by LP-MOCVD method in silicon-based thin-film solar cells

    Science.gov (United States)

    Wang, Li; Zhang, Xiaodan; Zhao, Ying; Yamada, Takuto; Naito, Yusuke

    2014-10-01

    A new plasma post-etching method, H2/CH4 mixed gas plasma, is introduced to modify ZnO:B films grown by LP-MOCVD technique, successfully relaxing the double trade-offs, i.e., transparency/conductivity trade-off and surface texture/Voc and FF trade-off. To deeply evaluate the post-etching process, optical emission spectroscopy technique is applied to diagnose the plasma condition. Upon different etching power, three distinct possible etching mechanisms are identified by analyzing the evolution of Hα*, Hβ*, CH* emission species in the plasma space. It is demonstrated that Hβ* and CH* species are responsible for the physical etching process and chemical etching process, respectively, from which a new “soft” surface morphology is formed with a combination of micro- and nano-sized texture. Additionally, Hα* species can bond with ZnO and also passivate the grains boundaries, thereby making both the carrier concentration and hall mobility increase. This process is defined as chemical bonding process. Finally, pin-type a-Si:H single-junction solar cells with an optimized device structure is grown on the etched ZnO:B substrate. The corresponding electrical parameters, such as Jsc, Voc and FF, are simultaneously improved compared with the solar cell deposited on as-grown ZnO:B substrate with the same fabrication process. As a consequence, a noteworthy 8.85% conversion-efficiency is achieved with an absorber layer thickness only 160 nm.

  5. Three-dimensional modelling of horizontal chemical vapor deposition. I - MOCVD at atmospheric pressure

    Science.gov (United States)

    Ouazzani, Jalil; Rosenberger, Franz

    1990-01-01

    A systematic numerical study of the MOCVD of GaAs from trimethylgallium and arsine in hydrogen or nitrogen carrier gas at atmospheric pressure is reported. Three-dimensional effects are explored for CVD reactors with large and small cross-sectional aspect ratios, and the effects on growth rate uniformity of tilting the susceptor are investigated for various input flow rates. It is found that, for light carrier gases, thermal diffusion must be included in the model. Buoyancy-driven three-dimensional flow effects can greatly influence the growth rate distribution through the reactor. The importance of the proper design of the lateral thermal boundary conditions for obtaining layers of uniform thickness is emphasized.

  6. Model Research On Deposition Of Pure Aluminium Oxide Layers By MOCVD Method

    Directory of Open Access Journals (Sweden)

    Sawka A.

    2015-06-01

    Full Text Available The purpose of this research is to develop an optimal method for synthesizing of nanocrystalline Al2O3 monolayers at high growth rates on cemented carbides coated with an intermediate layer of pre-Al2O3-C (composite layers Al2O3-C/Al2O3. The use of quartz glass substrate allows for obtaining information about the quality of the layers such the thickness and density, because of its high transparency. The Al2O3 layers that do not containing carbon were synthesized on quartz glass by MOCVD using aluminum acetylacetonate and air as the reactants at temperatures of 700-1000°C. Argon was also a carrier gas. The resulting layers were transparent, as homogeneous nucleation did not occur during the synthesis process. The layers synthesized at lower temperatures were subjected to a crystallization process at temperatures above 900°C. The crystallization process was studied as a function of time and temperature. The obtained layers were characterized by their nanocrystalline microstructure.

  7. Highly conformal and high-ionic conductivity thin-film electrolyte for 3D-structured micro batteries: Characterization of LiPON film deposited by MOCVD method

    Science.gov (United States)

    Fujibayashi, Takashi; Kubota, Yusuke; Iwabuchi, Katsuhiko; Yoshii, Naoki

    2017-08-01

    This paper reports a lithium phosphorus oxynitride (LiPON) thin-film electrolyte deposited using a metalorganic-chemical vapor deposition (MOCVD) method for 3D-structured micro batteries. It is shown that the MOCVD-LiPON film has both highly-conformal step coverage on a patterned substrate with line/space=2μm/2μm and aspect ratio=1 (51±3 nm) and high-ionic conductivity for very thin films deposited at 4.7 nm/min (5.9×10-6 S/cm for 190 nm and 5.3×10-6 S/cm for 95 nm). Detailed material characterization attributes the enhancement in ionic conductivity to a decrease in nanocrystallite size and improvement in chemical-composition uniformity in the film. In addition, electrochemical characterization of an all-solid-state thin-film battery fabricated with the 190 nm-thick LiPON film (Si substrate/Ti/Pt/LiCoO2/LiPON/a-Si:H/Cu) demonstrates that the LiPON film can successfully act as the electrolyte for lithium-ion batteries. Therefore, the MOCVD-LiPON film is a promising candidate material to realize 3D-structured micro batteries in the near future.

  8. Highly conformal and high-ionic conductivity thin-film electrolyte for 3D-structured micro batteries: Characterization of LiPON film deposited by MOCVD method

    Directory of Open Access Journals (Sweden)

    Takashi Fujibayashi

    2017-08-01

    Full Text Available This paper reports a lithium phosphorus oxynitride (LiPON thin-film electrolyte deposited using a metalorganic-chemical vapor deposition (MOCVD method for 3D-structured micro batteries. It is shown that the MOCVD-LiPON film has both highly-conformal step coverage on a patterned substrate with line/space=2μm/2μm and aspect ratio=1 (51±3 nm and high-ionic conductivity for very thin films deposited at 4.7 nm/min (5.9×10-6 S/cm for 190 nm and 5.3×10-6 S/cm for 95 nm. Detailed material characterization attributes the enhancement in ionic conductivity to a decrease in nanocrystallite size and improvement in chemical-composition uniformity in the film. In addition, electrochemical characterization of an all-solid-state thin-film battery fabricated with the 190 nm-thick LiPON film (Si substrate/Ti/Pt/LiCoO2/LiPON/a-Si:H/Cu demonstrates that the LiPON film can successfully act as the electrolyte for lithium-ion batteries. Therefore, the MOCVD-LiPON film is a promising candidate material to realize 3D-structured micro batteries in the near future.

  9. Urchin-like artificial gallium oxide nanowires grown by a novel MOCVD/CVD-based route for random laser application

    Energy Technology Data Exchange (ETDEWEB)

    Melo, Ronaldo P. de [Programa de Pós-Graduação em Ciências de Materiais, Universidade Federal de Pernambuco, Recife (Brazil); Colégio Militar do Recife, Exército Brasileiro, Recife PE 50730-120 (Brazil); Oliveira, Nathalia Talita C. [Programa de Pós-Graduação em Ciências de Materiais, Universidade Federal de Pernambuco, Recife (Brazil); Dominguez, Christian Tolentino; Gomes, Anderson S. L.; Araújo, Cid B. de [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife (Brazil); Falcão, Eduardo H. L.; Alves, Severino; Luz, Leonis L. da [Departamento de Química Fundamental, Universidade Federal de Pernambuco, 50670-901 Recife (Brazil); Chassagnon, Remi [Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS-Université de Bourgogne, 9 Av. A. Savary, BP 47870, 21078 Dijon Cedex (France); Sacilotti, Marco [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife (Brazil); Nanoform Group, Laboratoire Interdisciplinaire Carnot de Bourgogne, Université de Bourgogne, Dijon (France)

    2016-04-28

    A novel procedure based on a two-step method was developed to obtain β-Ga{sub 2}O{sub 3} nanowires by the chemical vapor deposition (CVD) method. The first step consists in the gallium micro-spheres growth inside a metal-organic chemical vapor deposition environment, using an organometallic precursor. Nanoscale spheres covering the microspheres were obtained. The second step involves the CVD oxidization of the gallium micro-spheres, which allow the formation of β-Ga{sub 2}O{sub 3} nanowires on the micro-sphere surface, with the final result being a nanostructure mimicking nature's sea urchin morphology. The grown nanomaterial is characterized by several techniques, including X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray, transmission electron microscopy, and photoluminescence. A discussion about the growth mechanism and the optical properties of the β-Ga{sub 2}O{sub 3} material is presented considering its unknown true bandgap value (extending from 4.4 to 5.68 eV). As an application, the scattering properties of the nanomaterial are exploited to demonstrate random laser emission (around 570 nm) when it is permeated with a laser dye liquid solution.

  10. Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD

    Science.gov (United States)

    Tian, Pengfei; Edwards, Paul R.; Wallace, Michael J.; Martin, Robert W.; McKendry, Jonathan J. D.; Gu, Erdan; Dawson, Martin D.; Qiu, Zhi-Jun; Jia, Chuanyu; Chen, Zhizhong; Zhang, Guoyi; Zheng, Lirong; Liu, Ran

    2017-02-01

    GaN-based light emitting diodes (LEDs) have been fabricated on sapphire substrates with different thicknesses of GaN buffer layer grown by a combination of hydride vapor phase epitaxy and metalorganic chemical vapor deposition. We analyzed the LED efficiency and modulation characteristics with buffer thicknesses of 12 μm and 30 μm. With the buffer thickness increase, cathodoluminescence hyperspectral imaging shows that the dislocation density in the buffer layer decreases from  ∼1.3  ×  108 cm‑2 to  ∼1.0  ×  108 cm‑2, and Raman spectra suggest that the compressive stress in the quantum wells is partly relaxed, which leads to a large blue shift in the peak emission wavelength of the photoluminescence and electroluminescent spectra. The combined effects of the low dislocation density and stress relaxation lead to improvements in the efficiency of LEDs with the 30 μm GaN buffer, but the electrical-to-optical modulation bandwidth is higher for the LEDs with the 12 μm GaN buffer. A rate equation analysis suggests that defect-related nonradiative recombination can help increase the modulation bandwidth but reduce the LED efficiency at low currents, suggesting that a compromise should be made in the choice of defect density.

  11. Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD

    Science.gov (United States)

    Prabakaran, K.; Ramesh, R.; Jayasakthi, M.; Surender, S.; Pradeep, S.; Balaji, M.; Asokan, K.; Baskar, K.

    2017-03-01

    The present study focuses on the electronic excitation induced structural and optical properties of InGaN/GaN quantum well (QW) structures grown by metal organic chemical vapor deposition technique. These excitations were produced using Au7+ ion irradiation with 100 MeV energy. The X-ray rocking curves intensity and full width at half-maximum values corresponding to the planes of (0 0 0 2) and (1 0 -1 5) of the irradiated QW structures show the modifications in the screw and edge-type dislocation densities vary with the ion fluences. The structural characteristics using the reciprocal space mapping indicate the intermixing effects in InGaN/GaN QW structures. Atomic force microscopy images confirmed the presence of nanostructures and the surface modification due to heavy ion irradiation. The irradiated QW structures exhibited degraded photoluminescence intensity and a subsequent decrease in the yellow luminescence band intensity with the fluences of 1 × 1011 and 5 × 1012 ions/cm2 compared to the pristine QW structures.

  12. Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD

    Directory of Open Access Journals (Sweden)

    Ji-Hyeon Park

    2014-01-01

    Full Text Available Uniaxially p-n junction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111 substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a growth axis. The parallel assembly of the p-n junction nanowire was prepared on a Si substrate with a thermally grown SiO2 layer. The transport studies of horizontal gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n junction diodes. The p-n junction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.

  13. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.

    Science.gov (United States)

    Guimard, Denis; Ishida, Mitsuru; Bordel, Damien; Li, Lin; Nishioka, Masao; Tanaka, Yu; Ekawa, Mitsuru; Sudo, Hisao; Yamamoto, Tsuyoshi; Kondo, Hayato; Sugawara, Mitsuru; Arakawa, Yasuhiko

    2010-03-12

    We investigated the effects of post-growth annealing on the photoluminescence (PL) characteristics of InAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapor deposition (MOCVD). The onset temperature at which both the peak linewidth and the PL intensity degraded and the blueshift of the ground state emission wavelength occurred was found to depend on both the QD density and the In composition of the capping layer. This behavior is particularly important in view of QD integration in photonic devices. From the knowledge of the dependences of the PL characteristics after annealing on the QD and capping growth conditions, ground state lasing at 1.30 microm could be demonstrated from InAs/GaAs QDs grown by MOCVD. Finally, we compared the laser characteristics of InAs/GaAs QDs with those of InAs/Sb:GaAs QDs, grown according to the antimony-mediated growth technique, and showed that InAs/Sb:GaAs QDs are more appropriate for laser fabrication at 1.3 microm by MOCVD.

  14. Ground state lasing at 1.30 {mu}m from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Guimard, Denis; Ishida, Mitsuru; Bordel, Damien; Li Lin; Nishioka, Masao; Arakawa, Yasuhiko [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Tanaka, Yu; Kondo, Hayato; Sugawara, Mitsuru [QD Laser Inc., 1-8-1 Ohtemachi, Chyoda-ku, Tokyo 100-0004 (Japan); Ekawa, Mitsuru; Sudo, Hisao; Yamamoto, Tsuyoshi, E-mail: dguimard@iis.u-tokyo.ac.jp [Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-0197 (Japan)

    2010-03-12

    We investigated the effects of post-growth annealing on the photoluminescence (PL) characteristics of InAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapor deposition (MOCVD). The onset temperature at which both the peak linewidth and the PL intensity degraded and the blueshift of the ground state emission wavelength occurred was found to depend on both the QD density and the In composition of the capping layer. This behavior is particularly important in view of QD integration in photonic devices. From the knowledge of the dependences of the PL characteristics after annealing on the QD and capping growth conditions, ground state lasing at 1.30 {mu}m could be demonstrated from InAs/GaAs QDs grown by MOCVD. Finally, we compared the laser characteristics of InAs/GaAs QDs with those of InAs/Sb:GaAs QDs, grown according to the antimony-mediated growth technique, and showed that InAs/Sb:GaAs QDs are more appropriate for laser fabrication at 1.3 {mu}m by MOCVD.

  15. Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD

    Institute of Scientific and Technical Information of China (English)

    LAU; KeiMay

    2010-01-01

    AlGaN/GaN high electron mobility transistors(HEMTs) were grown on Si substrates by MOCVD.In the HEMT structure,a 1 μm GaN buffer layer was partially doped with Mg in an attempt to increase the resistivity and minimize the buffer leakage.The AlGaN/GaN HEMTs grown on undoped and partially Mg-doped GaN buffer layers were processed and the DC characteristics of the devices were characterized for comparing the effect of Mg doping.For the device with the partially Mg-doped GaN buffer layer,a lower drain leakage current density of 55.8 nA/mm,a lower gate leakage current density of 2.73 μA/mm,and a higher off-state breakdown voltage of 104 V were achieved with device dimensions Lg/Wg/Lgs/Lgd=1/10/1/1 μm,better than the device with the undoped GaN buffer layer,which has a higher drain leakage current density of 9.2 μA/mm,a higher gate leakage current density of 91.8 μA/mm,and a lower off-state breakdown voltage of 87 V with the same device dimensions.

  16. Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Prabakaran, K.; Ramesh, R.; Jayasakthi, M.; Surender, S.; Pradeep, S. [Crystal Growth Centre, Anna University, Chennai (India); Balaji, M. [National Centre for Nanoscience and Nanotechnology, University of Madras, Guindy Campus, Chennai (India); Asokan, K. [Inter-University Accelerator Centre, New Delhi (India); Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai (India); Manonmaniam Sundaranar University, Tirunelveli (India)

    2017-03-01

    Highlights: • Effects on InGaN/GaN QW structures by Au{sup 7+} (100 MeV) ion have been investigated. • Structural defects of the irradiated InGaN/GaN QW structures are determined. • The intermixing effect in irradiated InGaN/GaN QW structures were understood. • Modified luminescence was observed in the PL spectra due to heavy ion irradiation. • Surface modification was observed due to the heavy ion irradiation. - Abstract: The present study focuses on the electronic excitation induced structural and optical properties of InGaN/GaN quantum well (QW) structures grown by metal organic chemical vapor deposition technique. These excitations were produced using Au{sup 7+} ion irradiation with 100 MeV energy. The X-ray rocking curves intensity and full width at half-maximum values corresponding to the planes of (0 0 0 2) and (1 0 −1 5) of the irradiated QW structures show the modifications in the screw and edge-type dislocation densities vary with the ion fluences. The structural characteristics using the reciprocal space mapping indicate the intermixing effects in InGaN/GaN QW structures. Atomic force microscopy images confirmed the presence of nanostructures and the surface modification due to heavy ion irradiation. The irradiated QW structures exhibited degraded photoluminescence intensity and a subsequent decrease in the yellow luminescence band intensity with the fluences of 1 × 10{sup 11} and 5 × 10{sup 12} ions/cm{sup 2} compared to the pristine QW structures.

  17. The biocompatibility of titanium in a buffer solution: compared effects of a thin film of TiO2 deposited by MOCVD and of collagen deposited from a gel.

    Science.gov (United States)

    Popescu, Simona; Demetrescu, Ioana; Sarantopoulos, Christos; Gleizes, Alain N; Iordachescu, Dana

    2007-10-01

    This study aims at evaluating the biocompatibility of titanium surfaces modified according two different ways: (i) deposition of a bio-inert, thin film of rutile TiO(2) by chemical vapour deposition (MOCVD), and (ii) biochemical treatment with collagen gel, in order to obtain a bio-interactive coating. Behind the comparison is the idea that either the bio-inert or the bio-active coating has specific advantages when applied to implant treatment, such as the low price of the collagen treatment for instance. The stability in buffer solution was evaluated by open circuit potential (OCP) for medium time and cyclic voltametry. The OCP stabilized after 5.10(4) min for all the specimens except the collagen treated sample which presented a stable OCP from the first minutes. MOCVD treated samples stabilized to more electropositive values. Numeric results were statistically analysed to obtain the regression equations for long time predictable evolution. The corrosion parameters determined from cyclic curves revealed that the MOCVD treatment is an efficient way to improve corrosion resistance. Human dermal fibroblasts were selected for cell culture tests, taking into account that these cells are present in all bio-interfaces, being the main cellular type of connective tissue. The cells grew on either type of surface without phenotype modification. From the reduction of yellow, water-soluble 3-(4,5-dimethyldiazol-2-yl)-2,5-diphenyl tetrazolium bromide (MTT cytotoxicity test), MOCVD treated samples offer better viability than mechanically polished Ti and collagen treated samples as well. Cell spreading, as evaluated from microscope images processed by the program Sigma Scan, showed also enhancement upon surface modification. Depending on the experimental conditions, MOCVD deposited TiO(2) exhibits different nanostructures that may influence biological behaviour. The results demonstrate the capacity of integration in simulated physiologic liquids for an implant pretreated by

  18. Thermodynamic analysis of the deposition of GaAs epitaxial layers prepared by the MOCVD method

    Energy Technology Data Exchange (ETDEWEB)

    Leitner, J.; Mikulec, J. (Dept. of Materials for Electronics, Prague Inst. of Chemical Tech. (Czechoslovakia)); Vonka, P. (Dept. of Physical Chemistry, Prague Inst. of Chemical Tech. (Czechoslovakia)); Stejskal, J.; Hladina, R.; Klima, P. (TESLA Research Inst. of Radiocommunication, Prague (Czechoslovakia))

    1991-06-01

    On the basis of a detailed thermodynamic analysis of the Ga-As-C-H system, the initial conditions have been determined, under which the reaction of trimethylgallium (TMGa) and arsine in a hydrogen atmosphere produces a single condensed phase - solid GaAs. Liquid gallium with a small amount of dissolved arsenic is formed simultaneously when the initial ratio of the elements is B{sup V}/A{sup III}<1, whereas solid graphite is simultaneously deposited at a high initial concentration of TMGa, especially at an elevated temperature and a decreased pressure. The equilibrium concentrations of the gaseous substances are strongly influenced by the initial B{sup V}/A{sup III} ratio. As{sub 2}, As{sub 4}, and CH{sub 4} are the dominant species if B{sup V}/A{sup III}>1, while CH{sub 4}, GaCH{sub 3}, GaH and GaH{sub 2} are the most abundant if B{sup V}/A{sup III} < 1. The calculated deposition diagrams are in good qualitative agreement with experimental results published in the literature. A comparison of the calculated composition of the gaseous phase and the results of experiments under the conditions used for the deposition of GaAs epitaxial layers leads to the conclusion that the course and results of the deposition process are significantly affected by transport and kinetic phenomena. (orig.).

  19. The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by MOCVD

    Institute of Scientific and Technical Information of China (English)

    Zhu Shaoxin; Yan Jianchang; Zeng Jianping; Zhang Ning; Si Zhao; Dong Peng; Li Jinmin

    2013-01-01

    The effect of periodic delta-doping and modulation-doping on high Al content n-AlxGa1-xN (x =0.55) epilayers grown by MOCVD has been investigated.Measured by XRD,AFM,contactless sheet resistance,and Hall-effect tests,δ-doped and modulation-doped n-AlxGa1-xN have better crystal quality,surface morphology and electrical properties as compared with uniformly-doped n-AlxGa1-xN.These improvements are attributed to the SiNx growth mask induced by δ-doping layers and the dislocation-blocking effect induced by both growth techniques.In addition,due to the broadened doping profile ascribed to enhanced dopant diffusion at high growth temperatures (1150 ℃) of n-Al0.55Ga0.45N,modulation-doped n-Al0.55Ga0.45N has similar properties as δ-doped n-Al0.55Ga0.45N.

  20. Effect of Carrier Gas Flux on ZnO Nanorod Arrays Grown by MOCVD%载气流量对氧化锌纳米棒阵列的影响

    Institute of Scientific and Technical Information of China (English)

    蔡芳芳; 魏鸿源; 范海波; 杨安丽; 张攀峰; 刘祥林

    2008-01-01

    ZnO nanorod arrays with different morphologies were grown by metalorganic chemical vapor deposition(MOCVD).The diameters of nanorods range from 150 nm to 20 nm through changing the carrier gas flux during the growth process.Measurements such as scanning electron microscope(SEM),X-ray diffraction(XRD),Raman scattering and photoluminescence(PL)spectrum were employed to analyze the differences of these nanorods.It was found that when both carrier gas flux of Zn and O reactant are 1 SLM,we can obtain the best vertically aligned and uniform nanorods.Furthermore,the PL spectrum reveals a blueshift of UV emission peak,which may be assigned to the increase of surface effect.%本文研究了在金属有机化学气相沉积法(MOCVD)生长过程中,锌(Zn)源和氧(O)源载气流量的改变对ZnO纳米棒阵列的影响.通过改变源材料载气的流量,得到了直径从150 nm到20 nm范围、均一性明显改善的ZnO纳米棒.采用扫描电子显微镜(SEM),X射线衍射图谱(XRD),拉曼光谱(Raman)和光致荧光光谱(PL)等测试手段对样品的形貌结构和光学特性进行了表征.SEM和XRD结果表明当Zn源和O源的载气流量均为1 SLM时,所得的纳米棒直径最均匀,排列整齐,垂直于衬底生长,且结晶度最好.PL谱显示纳米棒的紫外带边峰发生了蓝移,可能与表面效应的增加有关.

  1. Structure, morphology and Raman and optical spectroscopic analysis of In1-xCuxP thin films grown by MOCVD technique for solar cell applications

    Science.gov (United States)

    Alshahrie, Ahmed; Juodkazis, S.; Al-Ghamdi, A. A.; Hafez, M.; Bronstein, L. M.

    2017-10-01

    Nanocrystalline In1-xCuxP thin films (0 ≤ x ≤ 0.5) have been deposited on quartz substrates by a Metal-Organic Chemical Vapor Deposition (MOCVD) technique. The effect of the copper ion content on the structural crystal lattice, morphology and optical behavior of the InP thin films was assessed using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Raman spectroscopy and spectrophotometry. All films exhibited a crystalline cubic zinc blende structure, inferring the solubility of the Cu atoms in the InP crystal structure. The XRD patterns demonstrated that the inclusion of Cu atoms into the InP films forced the nanoparticles in the films to grow along the (1 1 1) direction. The AFM topography showed that the Cu ions reduce the surface roughness of deposited films. The Raman spectra of the deposited films contain the first and second order anti-stoke ΓTO, ΓLO, ΧLO + ΧTO, 2ΓTO, and ΓLO + ΓTO bands which are characteristic of the InP crystalline structure. The intensities of these bands decreased with increasing the content of the Cu atoms in the InP crystals implying the creation of a stacking fault density in the InP crystal structure. The In1-xCuxP thin films have shown high optical transparency of 90%. An increase of the optical band gap from 1.38 eV to 1.6 eV was assigned to the increase of the amount of Cu ions in the InP films. The In0.5Cu0.5P thin film exhibited remarkable optical conductivity with very low dissipation factor which makes it a promising buffer window for solar energy applications.

  2. Microstructures of GaN and In{sub x}Ga{sub 1-x}N films grown by MOCVD on free-standing GaN templates

    Energy Technology Data Exchange (ETDEWEB)

    Jasinski, J.; Liliental-Weber, Z.; Huang, D.; Reshchikov, M.A.; Yun, F.; Morkoc, H.; Sone, C.; Park, S.S.; Lee, K.Y.

    2002-04-30

    We summarize structural properties of thick HVPE GaN templates from the point of view of their application as substrates for growth of nitride layers. This is followed by the results of optical and structural studies, mostly transmission electron microscopy, of nitride layers grown by MOCVD on top of the HVPE substrates. The results indicate high structural quality of these layers with a low density of threading dislocations (in the range of 10{sup 6} cm{sup -2}). Convergent beam electron diffraction studies showed that the MOCVD GaN films have Ga-polarity, the same polarity as the HVPE GaN substrates. Structural studies of an InGaN layer grown on top of the MOCVD GaN film showed the presence of two layers, which differed in lattice parameter and composition. The upper layer, on the top of the structure had a c-lattice parameter about 2% larger than that of GaN and contained 10.3 {+-} 0.8% of In. Values measured for the thinner, intermediate layer adjacent to the GaN layer were about 2 .5 times lower.

  3. Effect of high-temperature buffer thickness on quality of AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    Liu Bo; Zhang Sen; Yin Jia-Yun; Zhang Xiong-Wen; Dun Shao-Bo; Feng Zhi-Hong; Cai Shu-Jun

    2013-01-01

    The effect of an initially grown high-temperature AlN buffer (HT-AlN) layer's thickness on the quality of an AlN epilayer grown on sapphire substrate by metalorganic chemical vapor deposition (MOCVD) in a two-step growth process is investigated.The characteristics of AIN epilayers are analyzed by using triple-axis crystal X-ray diffraction (XRD) and atomic force microscopy (AFM).It is shown that the crystal quality of the AlN epilayer is closely related to its correlation length.The correlation length is determined by the thickness of the initially grown HT-AIN buffer layer.We find that the optimal HT-AlN buffer thickness for obtaining a high-quality AlN epilayer grown on sapphire substrate is about 20 nm.

  4. Impact of photoluminescence temperature and growth parameter on the exciton localized in BxGa1-xAs/GaAs epilayers grown by MOCVD

    Science.gov (United States)

    Hidouri, Tarek; Saidi, Faouzi; Maaref, Hassen; Rodriguez, Philippe; Auvray, Laurent

    2016-10-01

    In this work, BxGa1-xAs/GaAs epilayers with three different boron compositions were elaborated by metal organic chemical vapor deposition (MOCVD) on GaAs (001) substrate. Structural study using High resolution X-ray diffraction (HRXRD) spectroscopy and Atomic Force Microscopy (AFM) have been used to estimate the boron fraction. The luminescence keys were carried out as functions of temperature in the range 10-300 K, by the techniques of photoluminescence (PL). The low PL temperature has shown an abnormal emission appeared at low energy side witch attributed to the recombination through the deep levels. In all samples, the PL peak energy and the full width at half maximum (FWHM), present an anomalous behavior as a result of the competition process between localized and delocalized carriers. We propose the Localized-state Ensemble model to explain the unusual photoluminescence behaviors. Electrical carriers generation, thermal escape, recapture, radiative and non-radiative lifetime are taken into account. The temperature-dependent photoluminescence measurements were found to be in reasonable agreement with the model of localized states. We controlled the evolution of such parameters versus composition by varying the V/III ratio to have a quantitative and qualitative understanding of the recombination mechanisms. At high temperature, the model can be approximated to the band-tail-state emission.

  5. Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophotometer. The results show that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal thickness of the GaN buffer layer. This work would be helpful for the growth of high quality DBR structures.

  6. DLTS and PL study of defects in InAlAs/InP heterojunctions grown by metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bouzgarrou, S. [Laboratoire de Microelectronique et Instrumentation (UR 03/13-04), Faculte des Sciences de Monastir, Avenue de l' Environnement, 5000 Monastir (Tunisia); Ben Salem, M.M. [Laboratoire de Physique des Semiconducteurs et des Composants Electroniques (LA-MA-06), Faculte des Sciences de Monastir, Avenue de l' Environnement, 5000 Monastir (Tunisia)]. E-mail: mongi.bensalem@fsm.rnu.tn; Hassen, F. [Laboratoire de Physique des Semiconducteurs et des Composants Electroniques (LA-MA-06), Faculte des Sciences de Monastir, Avenue de l' Environnement, 5000 Monastir (Tunisia); Kalboussi, A. [Laboratoire de Microelectronique et Instrumentation (UR 03/13-04), Faculte des Sciences de Monastir, Avenue de l' Environnement, 5000 Monastir (Tunisia); Souifi, A. [Laboratoire de Physique de la Matiere (UMR CNRS 5511), INSA de Lyon, Ba-hat t. 502, 20 Avenue Albert Einstein, 69621 Villeurbanne Cedex (France)

    2005-01-25

    Deep level transient spectroscopy (DLTS) and photoluminescence (PL) techniques are used to study the defects present in InAlAs/InP layers grown by metal organic chemical vapor deposition (MOCVD). In DLTS technique, different reverse bias and different heights and widths of the filling pulse are applied to the samples; the measurements have revealed the presence of four defects labelled A-D, which are found to be in a good agreement with the results of the photoluminescence (PL) technique. In fact, a detailed study of the defect (D) by photoluminescence (PL) technique has led to the same results as those determined by DLTS.

  7. EXAFS study on yttrium oxide thin films deposited by RF plasma enhanced MOCVD under the influence of varying RF self-bias

    Energy Technology Data Exchange (ETDEWEB)

    Chopade, S.S. [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Nayak, C.; Bhattacharyya, D.; Jha, S.N.; Tokas, R.B.; Sahoo, N.K. [Atomic and Molecular Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Patil, D.S., E-mail: dspatil@barc.gov.in [Laser and Plasma Technology Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

    2014-09-30

    Highlights: • Local structure and surface morphology of Y{sub 2}O{sub 3} thin films deposited by RF plasma MOCVD at different RF self-bias level investigated by EXAFS and AFM. • Bond length and oxygen coordination changes with bias. • Films are nanostructured with structural distortion at higher bias. • Surface morphology of films changes with bias. • Changes observed in local structural parameters are correlated with observed properties of films. • EXAFS study on Y{sub 2}O{sub 3} films deposited under different RF self-bias levels is not been reported so far. - Abstract: Extended X-ray absorption fine structure (EXAFS) and atomic force microscopy (AFM) studies are carried out on yttrium oxide (Y{sub 2}O{sub 3}) thin films deposited by radio frequency plasma assisted metalorganic chemical vapor deposition (MOCVD) process at different RF self-bias (−50 V to −175 V with a step of −25 V) on silicon substrates. A (2,2,6,6-tetramethyl-3,5-heptanedionate) yttrium (commonly known as Y(thd){sub 3}) precursor is used in a plasma of argon and oxygen gases at a substrate temperature of 350 °C for deposition. To gain profound understanding about influence of RF self-bias on the properties of the deposited Y{sub 2}O{sub 3} thin films, the films are characterized by EXAFS and AFM measurements. From the EXAFS measurements it is observed that oxygen co-ordination is high for the film deposited at the lowest self bias (−50 V) which is due to presence of higher amount of hydroxyl group in the sample. Oxygen coordination however decrease to lower values for the films deposited at self bias of −75 V. Y-O bond length decreases gradually with increase in self bias indicating reduction in hydroxyl content. However there is reduction in bond length for the film deposited at −100 V as compared to other films resulting from structural changes. The disorder factor obtained from EXAFS measurement increases for films deposited at voltages beyond −125 V due to

  8. Improvement of crystal quality of GaN grown on AlN template by MOCVD using HT-AlN interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Yuebin, Tao; Zhizhong, Chen; Zhijian, Yang; Liwen, Sang; Zhitao, Chen; Ding, Li; Hao, Fang; Guoyi, Zhang [State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing (China); Yaobo, Pan; Jianfeng, Yan; Guangmin, Zhu; Cheng, Chen; Shitao, Li; Maosheng, Hao [Epilight Technology Co., Ltd., Shanghai (China)

    2009-06-15

    Two GaN samples, with and without high temperature (HT)-AlN interlayer (labelled as sample A and B, respectively) grown by MOCVD on AlN template, were investigated by double-crystal X-ray diffraction (DC-XRD), photoluminescence (PL), and atomic force microscope (AFM) measurements. It was found that the crystal quality of GaN could be greatly improved by the HT-AlN interlayer. The full width at half maximum (FWHM) of (102) reflection in XRD rocking curve was narrower for sample A than that for sample B. However, the FWHMs of (002) reflections were almost the same for the two samples. In addition, the tilt degree which reflected screw dislocation density was almost the same, while the twist degree which reflected edge dislocation density changed from 0.214 to 0.152 when the HT-AlN interlayer was used. Both the intensities of (102) reflection in XRD and band edge emission in PL for sample A were stronger too. In the AFM images, the atomic growth steps of sample A were clearer than those of sample B. According to the results of the in situ optical reflectivity spectra and the atomic force microscope (AFM) images, the above results were attributed to the three-dimensional (3D) growth mode of the HT-AlN interlayer. The HT-AlN interlayer may work as a kind of ''micro-area'' seed for epitaxial lateral overgrowth (ELOG) resulting in bending some dislocations. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Transmission electron microscopy, photoluminescence, and capacitance spectroscopy on GaAs/Si grown by metal organic chemical vapor deposition

    Science.gov (United States)

    Bremond, Georges E.; Said, Hicham; Guillot, Gerard; Meddeb, Jaafar; Pitaval, M.; Draidia, Nasser; Azoulay, Rozette

    1991-03-01

    We present a complete characterization study of GaAs/Si heteroepitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) at 750C using the two-step method. High resolution transmission electron microscopy secondary ion mass spectroscopy deep level transient spectroscopy (DLTS) and photoluminescence (PL) spectroscopy have been performed to study the initial stage of growth misfit and threading dislocations Si diffusion and the deep levels in the GaAs layer. We describe the influence of GaAs/AlAs superlattices in the buffer layer on the decrease of dislocation density and on Si diffusion from the substrate and the existence of deep electron traps induced by the heteroepitaxy. DLTS reveals hole traps attributed to Si incorporation on the basis of PL measurements which could contribute to the reduction of the minority carrier lifetime. We also show an improvement of the layer quality by the use of selective epitaxy.

  10. Compositional dependence of Raman scattering and photoluminescence emission in Cu-Ga-Se films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Grossberg, M., E-mail: mgross@staff.ttu.e [Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Krustok, J. [Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Siebentritt, S. [Universite du Luxembourg, 162a avenue de la Faiencerie, L-1511 Luxembourg (Luxembourg); Albert, J. [Helmholtz Centre Berlin, Glienicker Strasse 100, 14109 Berlin (Germany)

    2009-07-01

    This paper presents Raman scattering and photoluminescence (PL) analysis of polycrystalline Cu-Ga-Se films grown epitaxially on the GaAs substrate. In the compositional dependence of the Raman spectra of the CuGaSe{sub 2} films, the appearance of the ordered vacancy compounds (OVCs) CuGa{sub 3}Se{sub 5} and CuGa{sub 5}Se{sub 8} was observed. The dominating A{sub 1} Raman modes were detected at 185, 166 and 159 cm{sup -1}, respectively. The PL bands of CuGaSe{sub 2}, CuGa{sub 3}Se{sub 5} and CuGa{sub 5}Se{sub 8} at T=10 K were detected at 1.615, 1.72 and 1.76 eV, respectively. The dominating PL emission channel is the band-to-tail (BT) type recombination.

  11. Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD

    Institute of Scientific and Technical Information of China (English)

    WANG Yong; YU Nai-Sen; LI Ming; LAU Kei -May

    2011-01-01

    @@ AlGaN/GaN high electron mobility transistors(HEMTs) are grown on 2-inch Si(111) substrates by MOCVD.The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth.The top 1.0 μm GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface.The XRD results show that GaN(002)FWHM is 480arcsec and GaN(102) FWHM is 900arcsec.The AGaN/GaN HEMTs with optimized and nonoptimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized.For the dc characteristics of the device with optimized AlGaN/AlN interlayer,maximum drain current density Idss of 737mA/mm,peak transconductance Gm of 185mS/mm,drain leakage current density Ids of 1.7μA/mm,gate leakage current density Igs of 24.8 μA/mm and off-state breakdown voltage VBR of 67V are achieved with Lg/Wg/Lgs/Lgd = 1/10/1/1 μm.For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer,current gain cutoff frequency fT of 8.3 GHz and power gain cutoff frequency fmax of 19.9GHz are achieved with Lg/Wg/Lgs/Lgd = 1/100/1/1 μm.Furthermore,the best rf performance with fT of 14.5 GHz and fmax of 37.3 GHz is achieved with a reduced gate length of 0.7μm.%AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0 μm GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN(002) FWHM is 480arcsec and GaN(102) FWHM is 900arcsec. The AGaN/GaN HEMTs with optimized and nonoptimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the

  12. TiOxNy coatings grown by atmospheric pressure metal organic chemical vapor deposition

    OpenAIRE

    Maury, Francis; Duminica, Florin-Daniel

    2010-01-01

    International audience; Titanium oxynitride coatings were deposited on various substrates by an original atmospheric pressure metal organic chemical vapor deposition (MOCVD) process using titanium tetra-iso-propoxide as titanium and oxygen precursors and hydrazine as a nitrogen source. The films composition was monitored by controlling the N2H4 mole fraction in the initial reactive gas phase. The variation of the N content in the films results in significant changes in morphological, structur...

  13. Refractive index and birefringence of In{sub x}Ga{sub 1-x}N films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Sanford, N.A. [National Institute of Standards and Technology, Optoelectronics Division 815, Boulder, Colorado 80305 (United States); Munkholm, A.; Krames, M.R. [Lumileds Lighting, San Jose, California (United States); Shapiro, A.; Levin, I.; Davydov, A.V. [National Institute of Standards and Technology, Gaithersburg, Maryland (United States); Sayan, S. [National Institute of Standards and Technology, Gaithersburg, Maryland (United States); Rutgers University, Piscataway, New Jersey (United States); Wielunski, L.S.; Madey, T.E. [Rutgers University, Piscataway, New Jersey (United States)

    2005-05-01

    The refractive index and birefringence of In{sub x}Ga{sub 1-x}N films grown on GaN layers were measured by prism coupling used in conjunction with multilayer optical waveguide analysis. Samples with x=0.036, 0.049, 0.060, and 0.066 were examined at the separate wavelengths of 442, 457.9, 476.5, 488, 514.5, 532, and 632.8 nm. The In fraction x was determined by Rutherford backscattering spectroscopy. Separate measurements of the film thicknesses were performed by cross-sectional field-emission scanning electron microscopy (FESEM). Film thickness information was required in order to constrain the numerical simulation used to solve for the ordinary (n{sub o}) and extraordinary (n{sub e}) refractive indices. We found that n{sub o} is a weak function of both x and wavelength for the InGaN layers and could only be well distinguished from GaN (x=0) for the two shortest wavelengths used. On the other hand, n{sub e} for the InGaN layers was resolved from GaN for all the wavelengths and x values. The measurements for n{sub e} are limited by optical scattering observed at the shortest wavelengths and the higher values of x. Cross-sectional FESEM reveals that a source of this scattering is most likely triangular pits at the InGaN/GaN upper interface. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Epitaxial thin films grown by pulsed laser deposition

    NARCIS (Netherlands)

    Blank, D.H.A.

    2005-01-01

    In this paper, we present the pulsed laser deposition (PLD) technique to control the growth of metal oxide materials at atomic level using high-pressure reflective high-energy electron diffraction and ellipsometry. These developments have helped to make PLD a grown-up technique to fabricate complex

  15. Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

    Science.gov (United States)

    Aleshkin, V. Ya.; Baidus, N. V.; Dubinov, A. A.; Fefelov, A. G.; Krasilnik, Z. F.; Kudryavtsev, K. E.; Nekorkin, S. M.; Novikov, A. V.; Pavlov, D. A.; Samartsev, I. V.; Skorokhodov, E. V.; Shaleev, M. V.; Sushkov, A. A.; Yablonskiy, A. N.; Yunin, P. A.; Yurasov, D. V.

    2016-08-01

    We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A3B5 laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K and 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm2 at 77 K and 5.5 kA/cm2 at 300 K.

  16. Study of the functional properties of ITO grown by metalorganic chemical vapor deposition from different indium and tin precursors

    Energy Technology Data Exchange (ETDEWEB)

    Szkutnik, P.D., E-mail: pierre.szkutnik@cea.fr [LMGP, Laboratoire des Matériaux et du Génie Physique, 3 parvis Louis Néel, 38016 Grenoble cedex (France); Roussel, H. [LMGP, Laboratoire des Matériaux et du Génie Physique, 3 parvis Louis Néel, 38016 Grenoble cedex (France); Lahootun, V. [Fine Chemical Synthesis and Surface Science – FC3S, Air Liquide - R and D CRCD, 1 chemin de la porte des loges, 78354 Les-Loges-en-Josas (France); Mescot, X. [IMEP-LAHC Institut de la Microélectronique, Electromagnétisme, Photonique, Hyperfréquences UMR5130 CNRS - Grenoble INP, 3 parvis Louis Néel 38016 Grenoble (France); Weiss, F.; Jiménez, C. [LMGP, Laboratoire des Matériaux et du Génie Physique, 3 parvis Louis Néel, 38016 Grenoble cedex (France)

    2014-08-01

    Highlights: • Study of ITO layers obtained from three indium and two tin precursors by pulsed MOCVD. • Optimized tin doping depends on the tin chemical precursor. • Combination including acetyl acetonate ligand present the same characteristics. • Films elaborated between 350 and 700 °C with InMe2OtBu present a constant resistivity. - Abstract: Functional properties of tin doped indium oxide (ITO) layers grown by MOCVD from different indium and tin precursors are investigated. Selected indium precursors are In(acac){sub 3}, In(tmhd){sub 3} and InMe{sub 2}O{sup t}Bu, and tin precursors are DBTDA and Sn(acac){sub 2}. ITO layers are optically and electrically characterized to determine the better doping conditions. Differences in electrical properties of ITO layers are found when using InMe{sub 2}O{sup t}Bu, as compared to In(acac){sub 3} and to In(tmhd){sub 3}. The best films present a resistivity of 2.5 × 10{sup −4} Ω cm and a transmittance higher than 84% for high deposition temperatures (T ⩾ 600 °C). The nature of tin precursors modifies the optimal doping at which these characteristics are achieved. When doped by DBTDA optimal doping is 8 at.%, therefore close to the solubility limit of tin in In{sub 2}O{sub 3} matrix; but when using Sn(acac){sub 2}, or In(acac){sub 3}/DBTDA combination, best functional characteristics are obtained for the maximal doping content obtained, i.e. 2.5 at.%. For optimized conditions, the resistivity decreases when deposition temperature increases except when using the couple InMe{sub 2}O{sup t}Bu/DBTDA without oxygen addition during deposition. For this combination of precursors a resistivity of 1 × 10{sup −3} Ω cm is obtained at a deposition temperature of 350 °C and remains constant up to 600 °C. Only the films obtained from InMe{sub 2}O{sup t}Bu/DBTDA are crystalline state at a deposition temperature of 350 °C.

  17. a Dlts Study of the EL2 Deep Level in Epitaxial Layers of GALLIUM(1-X) Indium(x) Arsenide Deposited by Mocvd

    Science.gov (United States)

    Lang, Rick

    1990-01-01

    The EL2 deep level is the dominant naturally occurring electron trapping level in metal organic chemical vapour deposited (MOCVD) GaAs. It is also present in ternary alloys such as Ga_{1-x} Al_{x}As, GaAs_{rm 1-x}P _{x} and Ga_ {1-x}In_{ x}As where the changing composition of the crystal lattice alters the local environment of the deep levels. This can influence the properties of the deep level wave functions due to their sensitivity to their immediate environment. In the present work Deep Level Transient Spectroscopy (DLTS) has been employed to measure the thermal activation energy of the EL2 deep level in Ga_{ 1-x}In_{x}As epilayers deposited by low pressure MOCVD onto degenerately doped GaAs substrates. To perform these measurements Au Schottky barrier diodes were fabricated on the epilayers and characterized by Current-Voltage (I -V) and Capacitance-Voltage (C-V) measurements. For some of the samples investigated, the results of these measurements and the DLTS measurements performed using various biasing conditions revealed either back-to-back diode behaviour, or large temperature dependencies for the calculated depletion region widths, or severe bias-sensitive variations in the DLTS spectra. Such behaviours are related to conditions at the Schottky interface and denote that the DLTS results are distorted and unreliable. After elimination of these distorted results, two different dependences of the EL2 thermal activation energy on the indium concentration of the epilayer were apparent. The dependences differed for epilayers deposited using different substrate orientations and V/III reagent ratios during epilayer deposition. For both cases the thermal activation energy decreased with increasing indium concentration in the epilayers. Investigations of the DLTS measurement conditions were made to determine if the differences in the thermal activation energy dependences on the indium concentrations were caused by conditions which are known to influence the

  18. Study of the optical properties and structure of ZnSe/ZnO thin films grown by MOCVD with varying thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Jabri, S., E-mail: slaheddine.jabri@fst.rnu.tn [Unité des nanomatériaux et photoniques, Faculté des Sciences de Tunis, Campus Universitaire Ferhat Hachad, El Manar, 2092 Tunis (Tunisia); Amiri, G.; Sallet, V. [Groupe d’Etude de la Matière Condensée, CNRS-Université de Versailles St Quentin, Université Paris-Saclay, 45 avenue des Etats Unis, 78035 Versailles Cedex (France); Souissi, A. [Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopole Borj Cedria, B.P. 95, Hammammlif 2050 (Tunisia); Meftah, A. [Unité des nanomatériaux et photoniques, Faculté des Sciences de Tunis, Campus Universitaire Ferhat Hachad, El Manar, 2092 Tunis (Tunisia); Galtier, P. [Groupe d’Etude de la Matière Condensée, CNRS-Université de Versailles St Quentin, Université Paris-Saclay, 45 avenue des Etats Unis, 78035 Versailles Cedex (France); Oueslati, M. [Unité des nanomatériaux et photoniques, Faculté des Sciences de Tunis, Campus Universitaire Ferhat Hachad, El Manar, 2092 Tunis (Tunisia)

    2016-05-15

    ZnSe layers were grown on ZnO substrates by the metal organic chemical vapor deposition technique. A new structure appeared at lower thicknesses films. The structural properties of the thin films were studied by the X-ray diffraction (XRD) and Raman spectroscopy methods. First, Raman selection rules are explicitly put forward from a theoretical viewpoint. Second, experimentally-retrieved-intensities of the Raman signal as a function of polarization angle of incident light are fitted to the obtained theoretical dependencies in order to confirm the crystallographic planes of zinc blend ZnSe thin film, and correlate with DRX measurements. Raman spectroscopy has been used to characterize the interfacial disorder that affects energy transport phenomena at ZnSe/ZnO interfaces and the Photoluminescence (PL) near the band edge of ZnSe thin films.

  19. X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures*

    Institute of Scientific and Technical Information of China (English)

    Wang Yuanzhang; Li Jinchai; Li Shuping; Chen Hangyang; Liu Dayi; Kang Junyong

    2011-01-01

    The grazing incidence X-ray reflectivity (GIXR) technique and atomic force microscopy (AFM) were exploited to obtain an accurate evaluation of the surfaces and interfaces for metalorganic chemical vapor deposition grown AlxGa1-xN/GaN superlattice structures. The X-ray diffraction results have been combined with reflectivity data to evaluate the layer thickness and Al mole fraction in the AlGaN layer. The presence ora smooth interface is responsible for the observation of intensity oscillation in GIXR, which is well correlated to step flow observation in AFM images of the surface. The structure with a low Al mole fraction (x = 0.25) and thin well width has a rather smooth surface for the Rrms of AFM data value is 0.45 nm.

  20. Structure and properties of Fe{sub 3}O{sub 4} films grown on ZnO template via metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhonghua [School of Electronic Science & Engineering, Nanjing University, Nanjing 210046 (China); Gu, Shulin, E-mail: slgu@nju.edu.cn [School of Electronic Science & Engineering, Nanjing University, Nanjing 210046 (China); Huang, Shimin [School of Electronic Science & Engineering, Nanjing University, Nanjing 210046 (China); Tang, Kun, E-mail: ktang@nju.edu.cn [School of Electronic Science & Engineering, Nanjing University, Nanjing 210046 (China); Ye, Jiandong; Zhu, Shunming [School of Electronic Science & Engineering, Nanjing University, Nanjing 210046 (China); Xu, Mingxiang [Department of Physics, Southeast University, Nanjing 210096 (China); Zheng, Youdou [School of Electronic Science & Engineering, Nanjing University, Nanjing 210046 (China)

    2015-07-01

    We report the structure and properties of Fe{sub 3}O{sub 4} films grown on ZnO template by metal-organic chemical vapor deposition (MOCVD). The thick and thin Fe{sub 3}O{sub 4} films have been grown with thickness of 500 nm and 50 nm, respectively, to study the quality and interface property of the Fe{sub 3}O{sub 4}/ZnO structure. Vacuum annealing has been employed to study its stability. X-ray diffraction measurement revealed the Fe{sub 3}O{sub 4} film deposited on ZnO (0001) layer in (111) orientation with a Zn{sub x}Fe{sub 3−x}O{sub 4} transitional layer at interface due to Zn diffusion. It is well supported by the observation on Raman scatting that the vacuum annealing improved the structural quality of the remainder Fe{sub 3}O{sub 4} film for thick sample and formed ZnFe{sub 2}O{sub 4} layer for the thin one. X-ray photoelectron spectra employed on the thin sample confirmed that the formation of Zn{sub x}Fe{sub 3−x}O{sub 4} transition layer at the Fe{sub 3}O{sub 4}/ZnO interface. The Fe{sup 3+}/Fe{sup 2+} ratio increases along the growth direction, indicating the diffused Zn atoms prefer to replace Fe{sup 3+} in Zn{sub x}Fe{sub 3−x}O{sub 4}. Magnetization curve measurement results are well consistent with the structural evolution for both samples. This study indicates that high-quality Fe{sub 3}O{sub 4} film grown by MOCVD on ZnO template layer is feasible, but the influence of the formed Zn{sub x}Fe{sub 3−x}O{sub 4} transition layer on spin injection should be researched and even inhibited in the further study. - Highlights: • We grow single phase Fe{sub 3}O{sub 4} films by MOCVD successfully. • The formation mechanism of Zn{sub x}Fe{sub 3−x}O{sub 4} transition layer was revealed in detail. • Our study provides a clue to obtain sharp heterostructure interface.

  1. Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    He, X.G. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, D.S.; Liu, Z.S.; Chen, P.; Le, L.C.; Yang, J.; Li, X.J. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhang, S.M.; Zhu, J.J.; Wang, H.; Yang, H. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2014-08-01

    GaN films were grown by metal-organic chemical vapor deposition (MOCVD) under various growth conditions. The influences of MOCVD growth parameters, i.e., growth pressure, ammonia (NH{sub 3}) flux, growth temperature, trimethyl-gallium flux and H{sub 2} flux, on residual carbon concentration ([C]) were systematically investigated. Secondary ion mass spectroscopy measurements show that [C] can be effectively modulated by growth conditions. Especially, it can increase by reducing growth pressure up to two orders of magnitude. High-resistance (HR) GaN epilayer with a resistivity over 1.0 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. The mechanism of the formation of HR GaN epilayer is discussed. An Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor structure with a HR GaN buffer layer and an additional low-carbon GaN channel layer is presented, exhibiting a high two dimensional electron gas mobility of 1815 cm{sup 2}/Vs. - Highlights: • Influence of MOCVD parameters on residual carbon concentration in GaN is studied. • GaN layer with a resistivity over 1 × 10{sup 9} Ω·cm is achieved by reducing growth pressure. • High electron mobility transistor (HEMT) structures were prepared. • Control of residual carbon content results in HEMT with high 2-D electron gas mobility.

  2. Stoichiometric magnetite grown by infrared nanosecond pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sanz, Mikel, E-mail: mikel.sanz@iqfr.csic.es [Instituto de Química Física Rocasolano, CSIC, 28006 Madrid (Spain); Oujja, Mohamed; Rebollar, Esther; Marco, José F.; Figuera, Juan de la; Monti, Matteo [Instituto de Química Física Rocasolano, CSIC, 28006 Madrid (Spain); Bollero, Alberto [IMDEA Nanoscience, Instituto Madrileño de Estudios Avanzados en Nanociencia, Campus Universidad Autónoma de Madrid, 28049 Madrid (Spain); Camarero, Julio [IMDEA Nanoscience, Instituto Madrileño de Estudios Avanzados en Nanociencia, Campus Universidad Autónoma de Madrid, 28049 Madrid (Spain); Departamento de Física de la Materia Condensada, Instituto Nicolás Cabrera, Campus Universidad Autónoma de Madrid, 28049 Madrid (Spain); Pedrosa, Francisco J. [IMDEA Nanoscience, Instituto Madrileño de Estudios Avanzados en Nanociencia, Campus Universidad Autónoma de Madrid, 28049 Madrid (Spain); García-Hernández, Mar [Instituto de Ciencias Materiales de Madrid, CSIC, 28049 Madrid (Spain); Castillejo, Marta [Instituto de Química Física Rocasolano, CSIC, 28006 Madrid (Spain)

    2013-10-01

    Pulsed laser deposition (PLD) is a versatile technique for the fabrication of nanostructures due to the possibilities it offers to control size and shape of nanostructured deposits by varying the laser parameters. Magnetite nanostructures are currently promising materials to be used in computing, electronic devices and spintronic applications. For all these uses the fabrication of uniform nanostructured pure magnetite thin films is highly advantageous. In PLD of magnetite, the laser irradiation wavelength and substrate temperature crucially affect the composition, crystallinity, surface structure and the magnetic properties of the grown samples. This work shows that the use of nanosecond IR laser at 1064 nm enhances the quality of the resulting magnetite thin films, compared to the extensively used UV wavelengths. Deposition at 1064 nm, upon heating the substrate at 750 K, produces thin films constituted by stoichiometric magnetite nanoparticles with sharp edges and sizes ranging from 80 to 150 nm, with a Verwey transition at 119 K and a coercivity of 232 Oe at room temperature, close to those of pure bulk magnetite. Thus, IR-PLD of self-prepared hematite sintered targets constitutes a low-cost procedure of fabrication of pure magnetite nanostructured thin films.

  3. Epitaxial yttrium iron garnet films grown by pulsed laser deposition

    Science.gov (United States)

    Dorsey, P. C.; Bushnell, S. E.; Seed, R. G.; Vittoria, C.

    1993-07-01

    Epitaxial Y3Fe5O12 (YIG) films have been grown by the pulsed laser deposition (PLD) technique on (111) gadolinium gallium garnet substrates. The effect of substrate temperature and oxygen partial pressure on the structure, composition, and magnetic properties of the films was investigated and compared to liquid phase epitaxy YIG films. The results demonstrated that epitaxial YIG films could be prepared under a wide range of deposition conditions, but narrow linewidth (ΔH≂1 Oe) films were producible only at low oxygen partial pressures (O2temperatures (Ts≳800 °C). Since the linewidth of single-crystal YIG is dominated by surface and volume defects and/or impurities, the narrow linewidth indicated that PLD is a viable technique for producing high-quality ferrite films for microwave device applications. In addition, under all deposition conditions (50-1000 mTorr and 700-850 °C) there is a uniaxial axis perpendicular to the film plane. However, at low oxygen pressure the uniaxial anisotropy energy constant Ku is negative while at high oxygen pressure Ku is positive.

  4. TiO2 thin film growth using the MOCVD method

    Directory of Open Access Journals (Sweden)

    Bernardi M.I.B.

    2001-01-01

    Full Text Available Titanium oxide (TiO2 thin films were obtained using the MOCVD method. In this report we discuss the properties of a film, produced using a ordinary deposition apparatus, as a function of the deposition time, with constant deposition temperature (90 °C, oxygen flow (7,0 L/min and substrate temperature (400 °C. The films were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy (AFM and visible and ultra-violet region spectroscopy (UV-Vis. The films deposited on Si (100 substrates showed the anatase polycrystalline phase, while the films grown on glass substrates showed no crystallinity. Film thickness increased with deposition time as expected, while the transmittance varied from 72 to 91% and the refractive index remained close to 2.6.

  5. MOCVD growth of GaBN on 6H-SiC (0001) substrates[Metal Organic Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Wei, C.H.; Xie, Z.Y.; Edgar, J.H.; Zeng, K.C.; Lin, J.Y.; Jiang, H.X.; Chaudhuri, J.; Ignatiev, C.; Braski, D.N.

    2000-04-01

    B{sub x}Ga{sub 1{minus}x}N films were deposited on 6H-SiC (0001) substrates at 1,000 C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. The presence of boron was detected by Auger scanning microprobe, the shift of the (00.2) x-ray diffraction peak, and low-temperature photoluminescence. A single-phase B{sub x}Ga{sub 1{minus}x}N alloy with x = 1.5% was produced at the gas phase B/Ga ratio of 0.005. Phase separation into wurtzite BGaN and the B-rich phase occurred for a B/Ga ratio in the 0.01--0.2 range. Only BN was formed by B/Ga > 0.2. The B-rich phase was identified as h-BN with sp{sup 2} bonding based on the results of Fourier transform infrared spectroscopy. As the diborane flow exceeds the threshold concentration, the growth rate of GBaN decreases sharply, because the growth of GaN is poisoned by the formation of the slow growing BN phase. The band edge emission of B{sub x}Ga{sub 1{minus}x}N varies from 3.451 eV for x = 0% with FWHM of 39.2 meV to 3.465 eV for x = 1.5% with FWHM of 35.1 meV. The narrower FWHM indicates that the quality of GaN epilayer is improved with a small amount of boron incorporation. The PL line widths become broader as more boron is introduced into the solid solution.

  6. Synthesis, structure, vapour pressure and deposition of ZnO thin film by plasma assisted MOCVD technique using a novel precursor bis[(pentylnitrilomethylidine) (pentylnitrilomethylidine-μ-phenalato)]dizinc(II)

    Science.gov (United States)

    Chandrakala, C.; Sravanthi, P.; Raj Bharath, S.; Arockiasamy, S.; George Johnson, M.; Nagaraja, K. S.; Jeyaraj, B.

    2017-02-01

    A novel binuclear zinc schiff's base complex bis[(pentylnitrilomethylidine)(pentylnitrilomethylidine-μ-phenalato)]dizinc(II) (hereafter referred as ZSP) was prepared and used as a precursor for the deposition of ZnO thin film by MOCVD. The dynamic TG run of ZSP showed sufficient volatility and good thermal stability. The temperature dependence of vapour pressure measured by transpiration technique yielded a value of 55.8 ± 2.3 kJ mol-1 for the enthalpy of sublimation (ΔH°sub) in the temperature range of 423-503 K. The crystal structure of ZSP was solved by single crystal XRD which exhibits triclinic crystal system with the space group of Pī. The molecular mass of ZSP was determined by mass spectrometry which yielded the m/z value of 891 and 445 Da corresponding to its dimeric as well as monomeric form. The complex ZSP was further characterized by FT-IR and NMR. The demonstration of ZnO thin film deposition was carried out by using plasma assisted MOCVD. The thin film XRD confirmed the highly oriented (002) ZnO thin films on Si(100) substrate. The uniformity and composition of the thin film were analyzed by SEM/EDX. The band gap of ZnO thin film measurement indicated the blue shift with the value of 3.79 eV.

  7. Ge nanopillar solar cells epitaxially grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Kim, Youngjo; Lam, Nguyen Dinh; Kim, Kangho; Park, Won-Kyu; Lee, Jaejin

    2017-02-01

    Radial junction solar cells with vertically aligned wire arrays have been widely studied to improve the power conversion efficiency. In this work, we report the first Ge nanopillar solar cell. Nanopillar arrays are selectively patterned on p-type Ge (100) substrates using nanosphere lithography and deep reactive ion etching processes. Nanoscale radial and planar junctions are realized by an n-type Ge emitter layer which is epitaxially grown by MOCVD using isobutylgermane. In situ epitaxial surface passivation is employed using an InGaP layer to avoid high surface recombination rates and Fermi level pinning. High quality n-ohmic contact is realized by protecting the top contact area during the nanopillar patterning. The short circuit current density and the power conversion efficiency of the Ge nanopillar solar cell are demonstrated to be improved up to 18 and 30%, respectively, compared to those of the Ge solar cell with a planar surface.

  8. Ge nanopillar solar cells epitaxially grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Kim, Youngjo; Lam, Nguyen Dinh; Kim, Kangho; Park, Won-Kyu; Lee, Jaejin

    2017-01-01

    Radial junction solar cells with vertically aligned wire arrays have been widely studied to improve the power conversion efficiency. In this work, we report the first Ge nanopillar solar cell. Nanopillar arrays are selectively patterned on p-type Ge (100) substrates using nanosphere lithography and deep reactive ion etching processes. Nanoscale radial and planar junctions are realized by an n-type Ge emitter layer which is epitaxially grown by MOCVD using isobutylgermane. In situ epitaxial surface passivation is employed using an InGaP layer to avoid high surface recombination rates and Fermi level pinning. High quality n-ohmic contact is realized by protecting the top contact area during the nanopillar patterning. The short circuit current density and the power conversion efficiency of the Ge nanopillar solar cell are demonstrated to be improved up to 18 and 30%, respectively, compared to those of the Ge solar cell with a planar surface. PMID:28209964

  9. Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

    Science.gov (United States)

    Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

    1988-01-01

    Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

  10. Study of TiO{sub 2} nanomembranes obtained by an induction heated MOCVD reactor

    Energy Technology Data Exchange (ETDEWEB)

    Crisbasan, A., E-mail: andreea.crisbasan@yahoo.com [NANOFORM Group, ICB, Université de Bourgogne, BP 47 870, 21078 Dijon (France); Chaumont, D. [NANOFORM Group, ICB, Université de Bourgogne, BP 47 870, 21078 Dijon (France); Sacilotti, M. [NANOFORM Group, ICB, Université de Bourgogne, BP 47 870, 21078 Dijon (France); Departamento de Fisica – Universidade Federal de Pernambuco, Recife (Brazil); Crisan, A.; Lazar, A.M.; Ciobanu, I. [Science and Materials Engineering Faculty, University of Transilvania, Brasov (Romania); Lacroute, Y.; Chassagnon, R. [Université de Bourgogne, BP 47 870, 21078 Dijon (France)

    2015-12-15

    Highlights: • The TiO{sub 2} structures have been obtained by the MOCVD technique using ferrocene, cobalt layer (annealed at 350 °C) and Ti(OC{sub 3}H{sub 7}){sub 4}. • The TiO{sub 2} growth at 550 °C, during 20 min on the cobalt layer (obtained by electron beam evaporation method) on soda-lime glass has as result TiO{sub 2} nanomembranes. • The TiO{sub 2} nanomembranes grow on the cobalt nuclei. • The TiO{sub 2} nanomembranes are polycrystalline, built from TiO{sub 2} anatase and rutile crystals. - Abstract: Nanostructures of TiO{sub 2} were grown using the metal oxide chemical vapor deposition (MOCVD) technique. The procedure used induction heating on a graphite susceptor. This specific feature and the use of cobalt and ferrocene catalysts resulted in nanomembranes never obtained by common MOCVD reactors. The present study discusses the preparation of TiO{sub 2} nanomembranes and the dependence of nanomembrane structure and morphology on growth parameters.

  11. Effect of Annealing on Optical Properties of InAs Quantum Dots Grown by MOCVD on GaAs (100) Vicinal Substrates

    Institute of Scientific and Technical Information of China (English)

    LIANG Song; ZHU Hong-Liang; PAN Jiao-Qing; ZHAO Ling-Juan; WANG Wei

    2005-01-01

    @@ Thermal annealing effect on InAs quantum dots grown on vicinal (100) GaAs substrates is studied in comparison with dots on exact (100) GaAs substrates. We find that annealing acts stronger effect on dots with vicinal substrates by greatly accelerating the degradation of material quality, as well as slightly increasing the blueshift of the emission wavelength and the narrowing of PL linewidth. It is attributed to the higher strain in the dots formed on the vicinal substrates.

  12. Structural and optical investigation of nonpolar a-plane GaN grown by metal-organic chemical vapour deposition on r-plane sapphire by neutron irradiation

    Institute of Scientific and Technical Information of China (English)

    Xu Sheng-Rui; Zhang Jin-Feng; Gu Wen-Ping; Hao Yue; Zhang Jin-Cheng; Zhou Xiao-Wei; Lin Zhi-Yu; Mao Wei

    2012-01-01

    Nonpolar (11(2)0) a-plane GaN films are grown by metal-organic chemical vapour deposition (MOCVD) on r-plane (1(1)02) sapphire.The samples are irradiated with neutrons under a dose of 1 × 1015 cm-2.The surface morphology,the crystal defects and the optical properties of the samples before and after irradiation are analysed using atomic force microscopy (AFM),high resolution X-ray diffraction (HRXRD) and photoluminescence (PL).The AFM result shows deteriorated sample surface after the irradiation.Careful fitting of the XRD rocking curve is carried out to obtain the Lorentzian weight fraction.Broadening due to Lorentzian type is more obvious in the as-grown sample compared with that of the irradiated sample,indicating that more point defects appear in the irradiated sample.The variations of line width and intensity of the PL band edge emission peak are consistent with the XRD results.The activation energy decreases from 82.5 meV to 29.9 meV after irradiation by neutron.

  13. Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications

    Indian Academy of Sciences (India)

    Bhubesh Chander Joshi; Manish Mathew; B C Joshi; D Kumar; C Dhanavantri

    2010-01-01

    GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers respectively. High resolution XRD (HRXRD) peaks show FWHM of 272 and 296 arcsec for the (0 0 0 2) plane of GaN and GaN in GaN/AlGaN respectively. For GaN buffer layer, the Hall mobility is 346 cm2/V-s and carrier concentration is 4.5 × 1016 /cm3. AFM studies on GaN buffer layer show a dislocation density of 2 × 108/cm2 by wet etching in hot phosphoric acid. The refractive indices of GaN buffer layer on sapphire at 633 nm are 2.3544 and 2.1515 for TE and TM modes respectively.

  14. Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

    Directory of Open Access Journals (Sweden)

    Joseph J. Freedsman

    2012-06-01

    Full Text Available The trapping properties of in-situ metal-organic chemical vapor deposition (MOCVD grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors (MIS-HFETs with AlN layers grown at 600 and 700 °C has been quantitatively analyzed by frequency dependent parallel conductance technique. Both the devices exhibited two kinds of traps densities, due to AlN (DT-AlN and AlGaN layers (DT-AlGaN respectively. The MIS-HFET grown at 600 °C showed a minimum DT-AlN and DT-AlGaN of 1.1 x 1011 and 1.2 x 1010 cm-2eV-1 at energy levels (ET -0.47 and -0.36 eV. Further, the gate-lag measurements on these devices revealed less degradation ∼ ≤ 5% in drain current density (Ids-max. Meanwhile, MIS-HFET grown at 700 °C had more degradation in Ids-max ∼26 %, due to high DT-AlN and DT-AlGaN of 3.4 x 1012 and 5 x 1011 cm-2eV-1 positioned around similar ET. The results shows MIS-HFET grown at 600 °C had better device characteristics with trap densities one order of magnitude lower than MIS-HFET grown at 700 °C.

  15. Investigation of microstructure and V-defect formation inInxGa1-xN/GaN MQW grown using temperature-gradient MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, M.C.; Liliental-Weber, Z.; Zakharov, D.N.; McCready,D.E.; Jorgenson, R.J.; Wu, J.; Shan, W.; Bourret-Courchesne, E.D.

    2004-11-19

    Temperature-gradient Metalorganic Chemical Vapor Deposition was used to deposit In{sub x}Ga{sub 1-x}N/GaN multiple quantum well structures with a concentration gradient of indium across the wafer. These multiple quantum well structures were deposited on low defect density (2 x 10{sup 8} cm{sup -2}) GaN template layers for investigation of microstructural properties and V-defect (pinhole) formation. Room temperature photoluminescence and photomodulated transmission were used for optical characterization which show a systematic decrease in emission energy for a decrease in growth temperature. Triple-axis X-ray diffraction, scanning electron microscopy and cross-section transmission electron microscopy were used to obtain microstructural properties of different regions across the wafer. Results show that there is a decrease in crystal quality and an increase in V-defect formation with increasing indium concentration. A direct correlation was found between V-defect density and growth temperature due to increased strain and indium segregation for increasing indium concentration.

  16. Metamorphic In0.53Ga0.47As p-I-n photodetector grown on GaAs substrates by low-pressure MOCVD

    Institute of Scientific and Technical Information of China (English)

    Qi wang; Jihe Lü; Deping Xiong; Jing Zhou; Hui Huang; Ang Miao; Shiwei Cai; Yongqing Huang; Xiaomin Ren

    2007-01-01

    Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin lowtemperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typical responsivity of 0.12 A/W to 1.55-μm optical radiation, corresponding to an external quantum efficiency of 9.6%. Photodetectors with the active area of 50 × 50 (μm) exhibit the -3 dB bandwidth up to 6 GHz. These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit (OEIC) devices.

  17. Effects of ZnO Buffer Layer Thickness on Properties of MgxZn1-xO Thin Films Deposited by MOCVD

    Institute of Scientific and Technical Information of China (English)

    DONG Xin; LIU Da-li; DU Guo-tong; ZHANG Yuan-tao; ZHU Hui-chao; YAN Xiao-long; GAO Zhong-min

    2005-01-01

    High-quality MgxZn1-xO thin films were grown on sapphire(0001) substrates with a ZnO buffer layer of different thicknesses by means of metal-organic chemical vapor deposition. Diethyl zinc, bis-cyclopentadienyl-Mg and oxygen were used as the precursor materials. The crystalline quality, surface morphologies and optical properties of the MgxZn1-xO films were investigated by X-ray diffraction, atomic force microscopy and photoluminescence spectrometry. It was shown that the quality of the MgxZn1-xO thin films depends on the thickness of the ZnO buffer layer and an MgxZn1-xO thin film with a ZnO buffer layer whose thickness was 20 nm exhibited the best crystal-quality, optical properties and a flat and dense surface.

  18. InP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition

    Science.gov (United States)

    2002-01-01

    GaAs (100) substrates by MOCVD. InP quantum dots grown on In(0.5)Al(0.3)Ga(0.2)P have a high density on the order of about 1 - 2 x 10/sq cm with a...dominant size of about 10-15 nm for 7.5 ML growth. (1) These In(0.5)Al(0.3)Ga(0.2)P/ InP quantum dots have previously been characterized by atomic-force

  19. Nanometer sized structures grown by pulsed laser deposition

    KAUST Repository

    ElZein, Basma

    2015-10-01

    Nanometer sized materials can be produced by exposing a target to a laser source to remove material from the target and deposit the removed material onto a surface of a substrate to grow a thin film in a vacuum chamber

  20. Stoichiometric magnetite grown by infrared nanosecond pulsed laser deposition

    OpenAIRE

    Sanz, Mikel; Oujja, M.; Rebollar, Esther; Marco, J.F.; Figuera, Juan de la; Monti, Matteo; Bollero, A.; Camarero, J.; Pedrosa, Francisco J.; García-Hernández, M; Castillejo, Marta

    2013-01-01

    Pulsed laser deposition (PLD) is a versatile technique for the fabrication of nanostructures due to the possibilities it offers to control size and shape of nanostructured deposits by varying the laser parameters. Magnetite nanostructures are currently promising materials to be used in computing, electronic devices and spintronic applications. For all these uses the fabrication of uniform nanostructured pure magnetite thin films is highly advantageous. In PLD of magnetite, the laser irradiati...

  1. Growth of AlN nanostructure on GaN using MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Loganathan, R.; Ramesh, R.; Jayasakthi, M.; Prabakaran, K.; Kuppulingam, B.; Sankaranarayanan, M.; Balaji, M.; Arivazhagan, P.; Singh, Subra; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2015-06-24

    Aluminum nitride (AlN) nanowalls have been epitaxially grown on dislocation assisted GaN/Al{sub 2}O{sub 3} template by metal organic chemical vapor deposition (MOCVD) without any help of metal catalysts. A large number of nanowalls with thicknesses of 1.5-2.0 µm and height 400 nm have been deposited. The AlN nanowalls were found to have a preferred c-axis oriented with a hexagonal crystal structure. The AlN nanowalls and GaN/Al{sub 2}O{sub 3} template have been characterize at room temperature photoluminescence (PL) and high resolution X-ray diffraction (HRXRD)

  2. Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing

    Science.gov (United States)

    Liu, Hong-Bo; Zhao, Ling-Juan; Pan, Jiao-Qing; Zhu, Hong-Liang; Zhou, Fan; Wang, Bao-Jun; Wang, Wei

    2008-10-01

    We present the monolithic integration of a sampled-grating distributed Bragg reflector (SG-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55mbar) selective-area-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI) for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current Ith = 62 mA, and output power reaches 3.6mW. The wavelength tuning range covers 30nm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14 dB with bias of -5 V.

  3. Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing

    Institute of Scientific and Technical Information of China (English)

    LIU Hong-Bo; ZHAO Ling-Juan; PAN Jiao-Qing; ZHU Hong-Liang; ZHOU Fan; WANG Bao-Jun; WANG Wei

    2008-01-01

    We present the monolithic integration of a sampled-grating distributed Bragg reflector (SG-DBR) laser with a quantum-well eleetroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55mbar) selectivearea-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI)for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the QWI technology offers an abrupt band-gap change between two functional sections,which reduces internal absorption loss. The experimental results show that the threshold current Ith=62 mA,and output power reaches 3.6 roW. The wavelength tuning range covers 3Ohm, and all the corresponding side mode suppression ratios are over 30 dB. The extinction ratios at available wavelength channels can reach more than 14dB with bias of -5 V.

  4. Doping characteristics of Si-doped n-GaN Epilayers grown by low-pressure metal-organic chemical-vapor deposition

    CERN Document Server

    Noh, S K; Park, S E; Lee, I H; Choi, I H; Son, S J; Lim, K Y; Lee, H J

    1998-01-01

    We studied doping behaviors through analysis of the electronic properties of a series of undoped and Si-doped GaN epilayers grown on (0001) sapphire substrates by the low-pressure metal-organic chemical-vapor deposition (LP-MOCVD) technique. The doping efficiency was in the range of 0.4 - 0.8, and an empirical relation expressed as eta = 0.45 log[Si] - 8.1 was obtained. The temperature dependence of carrier concentration showed that the donor activation energy monotonically decreased from 17.6 meV to almost zero as the doping level increased. We suggest that the reduction in the activation energy is related not to autodoped defect centers but to doped Si donors and that the behavior originates from the formation of an impurity band. On the basis of an abrupt change in the compensation ratio from 0.9 to 0.5 by Si-doping, an exceptional difference in the Hall mobility between the undoped and the Si-doped films is explained by a mixed conduction mechanism of electrons and holes.

  5. ZnO layers grown by Atomic Layer Deposition: A new material for transparent conductive oxide

    Energy Technology Data Exchange (ETDEWEB)

    Godlewski, M., E-mail: godlew@ifpan.edu.p [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, Warsaw (Poland); Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszynski University, Warsaw (Poland); Guziewicz, E.; Luka, G.; Krajewski, T. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, Warsaw (Poland); Lukasiewicz, M.; Wachnicki, L.; Wachnicka, A. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, Warsaw (Poland); Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszynski University, Warsaw (Poland); Kopalko, K. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, Warsaw (Poland); Sarem, A.; Dalati, B. [Department of Physics, Faculty of Science, Tishreen University, Latakia (Syrian Arab Republic)

    2009-12-15

    We demonstrate possibility of a control (by selection of zinc precursors and variation of a growth temperature) of electrical properties of ZnO films grown by Atomic Layer Deposition (ALD). ZnO films grown by ALD are used in test photovoltaic devices (solar cells) as transparent conductive oxides for upper, transparent layer in inorganic and organic solar cells, and as n-type partners of p-type CdTe.

  6. Stoichiometry, thickness and crystallinity of MOCVD grown Hg{sub 1x-y}Cd{sub x}Mn{sub y}Te determined by nuclear techniques of analysis

    Energy Technology Data Exchange (ETDEWEB)

    Studd, W.B.; Johnston, P.N.; Bubb, I.F. [Royal Melbourne Inst. of Tech., VIC (Australia); Leech, P.W. [Applied Research and Developement, Telecom Australia, Clayton, VIC (Australia)

    1993-12-31

    The quaternary semi-conductor Hg{sub 1-x-y}Cd{sub x}Mn{sub y}Te has been grown by Metal Organic Chemical Vapour Deposition using the Interdiffused Multi-layer Process. The layers have been analysed by Ion beam (PIXE, RBS, channeling) and related analytical techniques (EDXRF, XRD, RHEED) to obtain stoichiometric and structural information. The analysis shows that all four elements are present throughout the layer and that the elemental concentrations and thickness of the layer vary considerably over the film. Channeling, XRD and RHEED have been combined to show that the layer is polycrystalline. 14 refs., 3 figs.

  7. Strain relaxation in graphene grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Troppenz, Gerald V., E-mail: gerald.troppenz@helmholtz-berlin.de; Gluba, Marc A.; Kraft, Marco; Rappich, Jörg; Nickel, Norbert H. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut für Silizium Photovoltaik, Kekuléstr. 5, D-12489 Berlin (Germany)

    2013-12-07

    The growth of single layer graphene by chemical vapor deposition on polycrystalline Cu substrates induces large internal biaxial compressive strain due to thermal expansion mismatch. Raman backscattering spectroscopy and atomic force microscopy were used to study the strain relaxation during and after the transfer process from Cu foil to SiO{sub 2}. Interestingly, the growth of graphene results in a pronounced ripple structure on the Cu substrate that is indicative of strain relaxation of about 0.76% during the cooling from the growth temperature. Removing graphene from the Cu substrates and transferring it to SiO{sub 2} results in a shift of the 2D phonon line by 27 cm{sup −1} to lower frequencies. This translates into additional strain relaxation. The influence of the processing steps, used etching solution and solvents on strain, is investigated.

  8. Effects of LP-MOCVD prepared TiO{sub 2} thin films on the in vitro behavior of gingival fibroblasts

    Energy Technology Data Exchange (ETDEWEB)

    Cimpean, Anisoara [Department of Biochemistry and Molecular Biology, University of Bucharest, Bucharest (Romania); Popescu, Simona [Faculty of Applied Chemistry and Materials Science, University Politehnica of Bucharest, Polizu, Bucharest (Romania); Centre Interuniversitaire de Recherche et d' Ingenierie des Materiaux (CIRIMAT), CNRS-INPT/ENSIACET, University of Toulouse, Toulouse (France); Ciofrangeanu, Cristina M. [Department of Biochemistry and Molecular Biology, University of Bucharest, Bucharest (Romania); Gleizes, Alain N., E-mail: alain.gleizes@ensiacet.fr [Centre Interuniversitaire de Recherche et d' Ingenierie des Materiaux (CIRIMAT), CNRS-INPT/ENSIACET, University of Toulouse, Toulouse (France)

    2011-02-15

    We report on the in vitro response of human gingival fibroblasts (HGF-1 cell line) to various thin films of titanium dioxide (TiO{sub 2}) deposited on titanium (Ti) substrates by low pressure metal-organic chemical vapor deposition (LP-MOCVD). The aim was to study the influence of film structural parameters on the cell behavior comparatively with a native-oxide covered titanium specimen, this objective being topical and interesting for materials applications in implantology. HGF-1 cells were cultured on three LP-MOCVD prepared thin films of TiO{sub 2} differentiated by their thickness, roughness, transversal morphology, allotropic composition and wettability, and on a native-oxide covered Ti substrate. Besides traditional tests of cell viability and morphology, the biocompatibility of these materials was evaluated by fibronectin immunostaining, assessment of cell proliferation status and the zymographic evaluation of gelatinolytic activities specific to matrix metalloproteinases secreted by cells grown in contact with studied specimens. The analyzed surfaces proved to influence fibronectin fibril assembly, cell proliferation and capacity to degrade extracellular matrix without considerably affecting cell viability and morphology. The MOCVD of TiO{sub 2} proved effective in positively modifying titanium surface for medical applications. Surface properties playing a crucial role for cell behavior were the wettability and, secondarily, the roughness, HGF-1 cells preferring a moderately rough and wettable TiO{sub 2} coating.

  9. Growth and Characterization of InN Thin Films on Sapphire by MOCVD

    Institute of Scientific and Technical Information of China (English)

    XIE Zi-Li; ZHANG Rong; XIU Xiang-Qian; LIU Bin; LI Liang; HAN Ping; GU Shu-Lin; SHI Yi; ZHENG You-Dou

    2007-01-01

    Indium nitride thin films are grown on sapphire substrates by metal-organic chemical vapour deposition(MOCVD).By employing three-step layer buffers,the mirror-like layers on two-inch sapphire wafers have been obtained.The structural,optical and electrical characteristics of InN are investigated by x-ray diffraction,scanning electron microscopy,atomic force microscopy,photoluminescence and infrared optical absorpton.The photoluminescence and the absorption studies of the materials reveal a marked energy bandgap structure around 0.70 eV at room temperature.The room-temperature Hall mobility and carrier concentration of the film are typically 939 cm2/Vs,and 3.9×1018cm-3,respectively.

  10. Study of surface morphology and alignment of MWCNTs grown by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shukrullah, S., E-mail: zshukrullah@gmail.com, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: maizats@petronas.com.my; Mohamed, N. M., E-mail: zshukrullah@gmail.com, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: maizats@petronas.com.my; Shaharun, M. S., E-mail: zshukrullah@gmail.com, E-mail: noranimuti-mohamed@petronas.com.my, E-mail: maizats@petronas.com.my [Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, 31750 Tronoh, Perak (Malaysia); Yasar, M., E-mail: Muhammad.yasar@ieee.org [Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, 31750 Tronoh, Perak (Malaysia)

    2014-10-24

    In this research work, Multiwalled Carbon Nanotubes (MWCNTs) have been synthesized successfully by using floating catalytic chemical vapor deposition (FCCVD) method. Different ferrocene amounts (0.1, 0.125 and 0.15 g) were used as catalyst and ethylene was used as a carbon precursor at reaction temperature of 800°C. Characterization of the grown MWCNTs was carried out by using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The obtained data showed that the catalyst weight affects the nanotubes diameter, alignment, crystallinity and growth significantly, whereas negligible influence was noticed on CNTs forest length. The dense, uniform and meadow like patterns of grown CNTs were observed for 0.15 g ferrocene. The average diameter of the grown CNTs was found in the range of 32 to 75 nm. Close inspection of the TEM images also confirmed the defects in some of the grown CNTs, where few black spots were evident in CNTs structure.

  11. Structure and Morphology of Phthalocyanine Films Grown in Electrical Fields by Vapor Deposition

    Science.gov (United States)

    Zhu, Shen; Banks, C. E.; Frazier, D. O.; Penn, B.; Abdeldayem, H.; Hicks, R.; Burns, H. D.; Thompson, G. W.

    1999-01-01

    Phthalocyanine (Pc) films have been synthesized by vapor deposition on quartz substrates, some of which were coated with a very thin gold film before depositing Pc films. Electrical fields up to 6200 V/cm between a mech electrode and the substrate are introduced during film growth. These films have been characterized by x-ray diffraction and scanning electron microscopy. The molecular orientations and surface morphology of Pc films were changed under the electrical fields. The surface of these films grown without electrical field shows whisk-like morphology. When films are deposited under an electrical field, a dense film with flat surface is obtained.

  12. Usability value and heavy metals accumulation in forage grasses grown on power station ash deposit

    Directory of Open Access Journals (Sweden)

    Simić Aleksandar S.

    2015-01-01

    Full Text Available The study of five forage grasses (Lolium multiflorum, Festuca rubra, Festuca arundinacea, Arrhenatherum elatius and Dactylis glomerata was conducted on an uncontaminated cultivated land, of leached chernozem type, and on “Nikola Tesla A” (TENT A thermal power station ash deposit. The concentrations of: As, Pb, Cd, Zn, Ni, Fe i Cu in grasses grown on two media were compared. Grass samples have been collected in tillering stage, when they were in full development. During the vegetative period three replications cut was conducted at about 3-5 cm height, imitating mowing and grazing. The concentrations of As and Ni were elevated in media samples collected from TENT A ash deposit, while the level of all studied elements in soil samples collected from cultivated land were within allowed limits. The variance of certain elements amounts in plant material collected from TENT A ash deposit was less homogeneous; the concentrations of As, Fe and Ni were higher in grasses collected from ash deposit, but Pb and Cu concentrations were higher in grasses grown on cultivated land. The concentrations of Zn were approximately the same in plants collected from the sites, whereas Cd concentrations were slightly increased in grasses grown on ash deposit. In general, it can be concluded from the results of this study that the concentrations of heavy metals in plants collected from both sites do not exceed maximal tolerant levels for fodder. The use of grasses grown on ash deposit for forage production should be taken with reserve. [Projekat Ministarstva nauke Republike Srbije, br. TR 31016: Unapređenje tehnologije gajenja krmnih biljaka na oranicama i travnjacima

  13. Vapor Phase Sensing Using Metal Nanorod Thin Films Grown by Cryogenic Oblique Angle Deposition

    Directory of Open Access Journals (Sweden)

    Piyush Shah

    2013-01-01

    Full Text Available We demonstrate the chemical sensing capability of silver nanostructured films grown by cryogenic oblique angle deposition (OAD. For comparison, the films are grown side by side at cryogenic (~100 K and at room temperature (~300 K by e-beam evaporation. Based on the observed structural differences, it was hypothesized that the cryogenic OAD silver films should show an increased surface enhanced Raman scattering (SERS sensitivity. COMSOL simulation results are presented to validate this hypothesis. Experimental SERS results of 4-aminobenzenethiol (4-ABT Raman test probe molecules in vapor phase show good agreement with the simulation and indicate promising SERS applications for these nanostructured thin films.

  14. Vacuum MOCVD fabrication of high efficience cells

    Science.gov (United States)

    Partain, L. D.; Fraas, L. M.; Mcleod, P. S.; Cape, J. A.

    1985-01-01

    Vacuum metal-organic-chemical-vapor-deposition (MOCVD) is a new fabrication process with improved safety and easier scalability due to its metal rather than glass construction and its uniform multiport gas injection system. It uses source materials more efficiently than other methods because the vacuum molecular flow conditions allow the high sticking coefficient reactants to reach the substrates as undeflected molecular beams and the hot chamber walls cause the low sticking coefficient reactants to bounce off the walls and interact with the substrates many times. This high source utilization reduces the materials costs power device and substantially decreases the amounts of toxic materials that must be handled as process effluents. The molecular beams allow precise growth control. With improved source purifications, vacuum MOCVD has provided p GaAs layers with 10-micron minority carrier diffusion lengths and GaAs and GaAsSb solar cells with 20% AMO efficiencies at 59X and 99X sunlight concentration ratios. Mechanical stacking has been identified as the quickest, most direct and logical path to stacked multiple-junction solar cells that perform better than the best single-junction devices. The mechanical stack is configured for immediate use in solar arrays and allows interconnections that improve the system end-of-life performance in space.

  15. Mg-doped Al{sub 0.85}Ga{sub 0.15}N layers grown by hot-wall MOCVD with low resistivity at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Kakanakova-Georgieva, A.; Nilsson, D.; Forsberg, U.; Janzen, E. [Department of Physics, Chemistry and Biology (IFM), Linkoeping University, 581 83 Linkoeping (Sweden); Stattin, M.; Haglund, Aa.; Larsson, A. [Photonics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, 412 96 Goeteborg (Sweden)

    2010-11-15

    We report on the hot-wall MOCVD growth of Mg-doped Al{sub x} Ga{sub 1-x}N layers with an Al content as high as x{proportional_to}0.85. After subjecting the layers to post-growth in-situ annealing in nitrogen in the growth reactor, a room temperature resistivity of 7 k{omega} cm was obtained indicating an enhanced p-type conductivity compared to published data for Al{sub x} Ga{sub 1-x}N layers with a lower Al content of x{proportional_to}0.70 and a room temperature resistivity of about 10 k{omega} cm. It is believed that the enhanced p-type conductivity is a result of reduced compensation by native defects through growth conditions enabled by the distinct hot-wall MOCVD system. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Composition and microstructure of beryllium carbide films prepared by thermal MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    He, Yu-dan; Luo, Jiang-shan; Li, Jia; Meng, Ling-biao; Luo, Bing-chi; Zhang, Ji-qiang; Zeng, Yong; Wu, Wei-dong, E-mail: wuweidongding@163.com

    2016-02-15

    Highlights: • Non-columnar-crystal Be{sub 2}C films were firstly prepared by thermal MOCVD. • Beryllium carbide was always the dominant phase in the films. • α-Be and carbon existed in films deposited below and beyond 400 °C, respectively. • Morphology evolved with temperatures and no columnar grains were characterized. • The preferred substrate temperature for depositing high quality Be{sub 2}C films was 400 °C. - Abstract: Beryllium carbide films without columnar-crystal microstructures were prepared on the Si (1 0 0) substrate by thermal metal organic chemical vapor deposition using diethylberyllium as precursor. The influence of the substrate temperature on composition and microstructure of beryllium carbide films was systematically studied. Crystalline beryllium carbide is always the dominant phase according to XRD analysis. Meanwhile, a small amount of α-Be phase exists in films when the substrate temperature is below 400 °C, and hydrocarbon or amorphous carbon exists when the temperature is beyond 400 °C. Surfaces morphology shows transition from domes to cylinders, to humps, and to tetraquetrous crystalline needles with the increase of substrate temperature. No columnar grains are characterized throughout the thickness as revealed from the cross-section views. The average densities of these films are determined to be 2.04–2.17 g/cm{sup 3}. The findings indicate the substrate temperature has great influences on the composition and microstructure of the Be{sub 2}C films grown by thermal MOCVD.

  17. Characterization of 1064nm laser-induced damage on antireflection coatings grown by atomic layer deposition

    Science.gov (United States)

    Liu, Zhichao; Wei, Yaowei; Chen, Songlin; Luo, Jin; Ma, Ping

    2011-12-01

    Damage tests were carried out to measure the laser resistance of Al2O3/TiO2 and Al2O3/HfO2 antireflection coatings at 1064nm grown by atomic layer deposition (ALD). The S-on-1 and R-on-1 damage results are given. It's interesting to find that ALD coatings damage performance seems closed to those grown by conventional e-beam evaporation process. For Al2O3/TiO2 coatings, the grown temperature will impact the damage resistance of thin films. Crystallization of TiO2 layer at higher temperature could play an importance role as absorption defects that reduced the LIDT of coatings. In addition, it is found that using inorganic compound instead of organic compound as precursors for ALD process can effective prevent residual carbon in films and will increase the LIDT of coatings.

  18. Nanostructured Diamond-Like Carbon Films Grown by Off-Axis Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Seong Shan Yap

    2015-01-01

    Full Text Available Nanostructured diamond-like carbon (DLC films instead of the ultrasmooth film were obtained by pulsed laser ablation of pyrolytic graphite. Deposition was performed at room temperature in vacuum with substrates placed at off-axis position. The configuration utilized high density plasma plume arriving at low effective angle for the formation of nanostructured DLC. Nanostructures with maximum size of 50 nm were deposited as compared to the ultrasmooth DLC films obtained in a conventional deposition. The Raman spectra of the films confirmed that the films were diamond-like/amorphous in nature. Although grown at an angle, ion energy of >35 eV was obtained at the off-axis position. This was proposed to be responsible for subplantation growth of sp3 hybridized carbon. The condensation of energetic clusters and oblique angle deposition correspondingly gave rise to the formation of nanostructured DLC in this study.

  19. PbTe thin films grown by femtosecond pulsed laser deposition

    Science.gov (United States)

    Rodriguez, E.; Silva, D.; Moya, L.; Cesar, C. L.; Barbosa, L. C.; Schrank, A.; Souza Filho, C. R.; de Oliveira, E. P.

    2007-09-01

    PbTe thin films were grown on BK7 glass and Si(100) substrates using femtosecond pulsed laser deposition at room temperature. The influence of the background pressure and the laser fluence on the structural and optical characteristics of the PbTe films was studied. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) were used to characterize the surface and structural properties of the deposited PbTe thin films, respectively. Transmission spectroscopy measurements in the visible and infrared region (VIS-IR) were used to investigate the optical properties of the PbTe thin films.

  20. Structural and magnetic properties of Gd/Fe multilayers grown by pulsed laser deposition

    DEFF Research Database (Denmark)

    Kant, K. Mohan; Bahl, Christian Robert Haffenden; Pryds, Nini

    2010-01-01

    This work investigates the structural and the magnetic properties of Gd/Fe multilayered thin films grown by pulsed laser deposition onto Si (001) substrates at room temperature. he Fe layer thickness is varied from 70 to 150 nm and its effect on the structural and magnetic properties of Fe....../Gd/Fe sandwich multilayers has been explored. Gd films were found to change from amorphous to polycrystalline at a critical thickness of 20 nm....

  1. Purification of Single-walled Carbon Nanotubes Grown by a Chemical Vapour Deposition (CVD) Method

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A procedure for purification of single-walled carbon nanotubes(SWNTs) grown by the chemical vapour deposition (CVD) of carbon monooxide has been developed. Based on the result from TGA/DTA of as-prepared sample, the oxidation temperature was determined. The process included sonication, oxidation and acid washing steps. The purity and yield after purification were determined and estimated by TEM. Moreover, for the first time, a loop structure for CVD SWNTs has been observed.

  2. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  3. Platinum-Iridium Alloy Films Prepared by MOCVD

    Institute of Scientific and Technical Information of China (English)

    WEI Yan; CHEN Li; CAI Hongzhong; ZHENG Xu; YANG Xiya; HU Changyi

    2012-01-01

    Platinum-Iridium alloy films were prepared by MOCVD on Mo substrate using metal-acetylacetonate precursors.Effects of deposition conditions on composition,microstructure and mechanical properties were determined.In these experimental conditions,the purities of films are high and more than 99.0%.The films are homogeneous and monophase solid solution of Pt and Ir.Weight percentage of platinum are much higher than iridium in the alloy.Lattice constant of the alloy changes with the platinum composition.Iridium composition showing an up-down-up trend at the precursor temperature of 190~230℃ and the deposition temperature at 400~550℃.The hardness of Pt-Ir alloys prepared by MOCVD is three times more than the alloys prepared by casting.

  4. MOCVD growth of GaN-based materials on ZnO substrates

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shen-Jie; Li, Nola; Park, Eun-Hyun; Kane, Matthew [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 (United States); Feng, Zhe Chuan [Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan 106-17 (China); Valencia, Adriana; Nause, Jeff [CERMET Inc., 1019 Collier Road, Atlanta, Georgia 30318 (United States); Summers, Chris [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 (United States); Ferguson, Ian [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 (United States); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250 (United States)

    2008-07-01

    The metalorganic chemical vapor deposition (MOCVD) growth of GaN based materials on ZnO substrates has numerous technical issues that need to be investigated and resolved. These include the thermal stability of ZnO, out-diffusion of Zn/O from the ZnO into the epilayers, and H{sub 2} back etching into the ZnO all of which can cause poor film quality. Cracks and pinholes were seen in the epilayers, leading to the epilayer peeling off. In this study, good quality InGaN films with a wide range of indium incorporation have been grown on (0001) ZnO substrates by MOCVD. No indium droplets and phase separation were observed even at high indium concentrations. The optical microscopy and field-emission scanning electron microscopy revealed a mirror-like InGaN surface with no evidence of indium droplets on the surface. Photoluminescence (PL) showed broad InGaN-related emissions with peak energy lower than the calculated InGaN band gap, possibly due to Zn/O impurities diffused into InGaN from the ZnO substrate. More recently, Al{sub 2}O{sub 3} coated ZnO substrates have been employed for growth to limit Zn diffusion as well as assist epilayer growth. HRXRD result shows that a single crystal InGaN film has been successfully grown on an annealed Al{sub 2}O{sub 3} coated ZnO substrate. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique

    Science.gov (United States)

    Shi, Bei; Lau, Kei May

    2016-01-01

    The effects of a double-cap procedure on the optical properties of an InAs/InAlGaAs quantum dots (QDs) system grown by metal-organic chemical vapor deposition (MOCVD) have been investigated by atomic force microscopy (AFM) and room temperature photoluminescence (RT-PL) spectroscopy. An optimized QD growth condition has been achieved, with an areal density of 4.6×1010 cm-2. It was found that the thickness and lattice constant of the high temperature second cap layer (SCL) were crucial for improving the integrated PL intensity and line-width of the 1.55 μm emission from the InAs/InAlGaAs QD system grown on a semi-insulating InP (100) substrate. With fine-tuned SCL thickness and lattice constant, the optical performance of the five-stack QDs was enhanced. The improvements can be attributed to the smooth growth front, observed from the AFM images, and the well-balanced stress engineering.

  6. Passive Q-Switching Modelocked Yb3+-Doped Fibre Laser with GaAs Absorber Grown at Low Temperature

    Institute of Scientific and Technical Information of China (English)

    FENG Xiao-Ming; WANG Yong-Gang; ZHANG Zhi-Gang; WANG Yong-Gang; LIU Yuan-Yuan; LAN Yong-Sheng; LIN Tao; WANG Jun; WANG Xiao-Wei; FANG Gao-Zhan; MA Xiao-Yu

    2005-01-01

    @@ GaAs absorber was grown at low temperature (550℃) by metal organic chemical vapour deposition (MOCVD)and was used as an output coupler with which we realized Q-switching modelocked Yb3+-doped fibre laser. The shortest period of the envelope of the Q-switched modelocking is about 3μs. The modelocking threshold is 4.27 W and the highest average output pulse power is 290mW. The modelocking frequency is 12MHz.

  7. Développement de conducteurs à base d'YBaCuO
    sur des substrats flexibles par MOCVD

    OpenAIRE

    CAROFF, Tristan

    2008-01-01

    The stake of this study was to realize low cost superconducting wires for current transport and current limitation, using original and inexpensive processes like rolling for the elaboration of the substrate, and chemical deposition methods MOD (metal organic decomposition) and MOCVD (metal organic chemical vapor deposition) for the different layers (buffer layers and superconducting film).Pulsed injection MOCVD technique is well adapted for coated conductor processing: it allows obtaining rep...

  8. Scaling behavior of the surface roughness of platinum films grown by oblique angle deposition

    Science.gov (United States)

    Dolatshahi-Pirouz, A.; Hovgaard, M. B.; Rechendorff, K.; Chevallier, J.; Foss, M.; Besenbacher, F.

    2008-03-01

    Thin platinum films with well-controlled rough surface morphologies are grown by e-gun evaporation at an oblique angle of incidence between the deposition flux and the substrate normal. Atomic force microscopy is used to determine the root-mean-square value w of the surface roughness on the respective surfaces. From the scaling behavior of w , we find that while the roughness exponent α remains nearly unchanged at about 0.90, the growth exponent β changes from 0.49±0.04 to 0.26±0.01 as the deposition angle approaches grazing incidence. The values of the growth exponent β indicate that the film growth is influenced by both surface diffusion and shadowing effects, while the observed change from 0.49 to 0.26 can be attributed to differences in the relative importance of diffusion and shadowing with the deposition angle.

  9. Optimization of Strontium Titanate (SrTiO3) Thin Films Fabricated by Metal Organic Chemical Vapor Deposition (MOCVD) for Microwave-Tunable Devices

    Science.gov (United States)

    2015-12-01

    maintained near 250 °C to prevent condensates. Solid-state β–Diketonate complex precursors Bis(2,2,6,6-tetramethyl-3,5- heptanedionato), purchased from Strem...and Titanium(IV) diisopropoxidebis(2,2,6,6-tetramethyl-3,5-heptanedionate), purchased from Sigma-Alrich, were used in all depositions. The Sr...Physics. 2005;38:2446–2451. 66. Hofman W, Hoffmann S, Waser, R. Dopant influence on dielectric losses, leakage behaviour , and resistance

  10. Effect of surface treatment on hot-filament chemical vapour deposition grown diamond films

    Science.gov (United States)

    Ali, M.; Ürgen, M.; Atta, M. A.

    2012-02-01

    Diamond film growth without seeding treatment has been the subject of numerous studies. In this study, diamond films with/without seeding treatment were grown on silicon using hot-filament chemical vapour deposition. An inexpensive and simple approach, namely ‘dry ultrasonic treatment’, was introduced in which full coverage of the diamond film was achieved over the substrate having no prior seeding treatment. For comparison purposes, two substrates were seeded with different sizes of diamond particles, 5 µm by hand and 30-40 µm by ultrasonic agitation, prior to deposition. The produced diamond films were examined through standard characterization tools and distinct features were observed in each film. The diamond film grown without the seeding treatment shows slightly lower growth rate (1 µm h-1) but bigger grain size up to 8 µm compared with seeded films. Here we show the growth of uniform and high-purity diamond films free from nano-sized grains, which are grown without any seeding treatment.

  11. Synthesis, characterization, and thermal properties of homoleptic rare-earth guanidinates: promising precursors for MOCVD and ALD of rare-earth oxide thin films.

    Science.gov (United States)

    Milanov, Andrian P; Fischer, Roland A; Devi, Anjana

    2008-12-01

    Eight novel homoleptic tris-guanidinato complexes M[(N(i)Pr)(2)CNR(2)](3) [M = Y (a), Gd (b), Dy (c) and R = Me (1), Et (2), (i)Pr (3)] have been synthesized and characterized by NMR, CHN-analysis, mass spectrometry and infrared spectroscopy. Single crystal structure analysis revealed that all the compounds are monomers with the rare-earth metal center coordinated to six nitrogen atoms of the three chelating guanidinato ligands in a distorted trigonal prism geometry. With the use of TGA/DTA and isothermal TGA analysis, the thermal characteristics of all the complexes were studied in detail to evaluate their suitability as precursors for thin film deposition by MOCVD and ALD. The (i)Pr-Me(2)N-guanidinates of Y, Gd and Dy (1a-c) showed excellent thermal characteristics in terms of thermal stability and volatility. Additionally, the thermal stability of the (i)Pr-Me(2)N-guanidinates of Y and Dy (1a, c) in solution was investigated by carrying out NMR decomposition experiments and both the compounds were found to be remarkably stable. All these studies indicate that (i)Pr-Me(2)N-guanidinates of Y, Gd and Dy (1a-c) have the prerequisites for MOCVD and ALD applications which were confirmed by the successful deposition of Gd(2)O(3) and Dy(2)O(3) thin films on Si(100) substrates. The MOCVD grown films of Gd(2)O(3) and Dy(2)O(3) were highly oriented in the cubic phase, while the ALD grown films were amorphous.

  12. Vacuum ultraviolet annealing of thin films grown by pulsed laser deposition

    Science.gov (United States)

    Craciun, Valentin; Craciun, Doina; Andreazza, Pascal; Perriere, Jacques; Boyd, Ian W.

    1999-01-01

    The effect of a post-deposition annealing treatment in 1 bar of oxygen at moderate temperatures (excimer lamp upon thin ZrO 2 and hydroxyapatite (HAp) films grown by the pulsed laser deposition (PLD) technique was investigated. The optical and structural properties of the films were improved by this treatment, the lower the deposition temperature and, accordingly, the poorer the initial characteristics, the more significant the improvements. The combination of these two techniques allowed us to obtain at temperatures below 350°C highly textured (020) ZrO 2 films, exhibiting optical absorption coefficients lower than 5×10 2 cm -1 and high refractive index values of around 2.25 in the visible region of the spectrum. The VUV treatment was also beneficial for the partially crystalline HAp layers containing tetracalcium phosphate and calcium oxide phases grown by the PLD technique under a low pressure oxidising atmosphere of only 10 -5 torr without any water vapours. After the VUV-assisted anneal, the crystalline structure and the stoichiometry greatly improved while the percentage of the other crystalline phases initially present was many times reduced.

  13. Cobalt-based magnetic nanostructures grown by focused-electron-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Begun, Evgeniya; Schwenk, Johannes; Porrati, Fabrizio; Huth, Michael [Physikalisches Institut, Goethe-Universitaet, D-60438 Frankfurt am Main (Germany)

    2011-07-01

    The fabrication of magnetic nanostructures by means of the direct-writing technique focused-electron-beam-induced deposition (FEBID) is an alternative to more conventional lithographic methods. We have grown magnetic cobalt structures by FEBID using the precursor dicobaltoctacarbonyl Co{sub 2}(CO){sub 8}. The obtained structures have a large metal content of about 85 at.% as compared to other metal-based deposits grown by the same technique, such as tungsten-based structures with 34 at.% maximum tungsten content and platin-based structures with about 24 at.% maximum platin content. We present a growth strategy for cobalt structures with tunable metal content. In particular, we show the influence of different combinations of electron-beam energy and current, the dwell time and the refresh time on the deposit composition, which was determined by energy-dispersive X-ray spectroscopy (EDX) at 5 keV. First results of magnetotransport measurements on these cobalt-based structures are presented.

  14. High efficiency AIGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition

    OpenAIRE

    Tetsuo, Soga; T.", "Kato; M., Yang; Masayoshi, Umeno; Takashi, Jimbo

    1995-01-01

    The improvements of the AlGaAs solar cell grown on the Si substrate and the AlGaAs/Si tandem solar cell by metalorganic chemical vapor deposition have been investigated. The active‐area conversion efficiency of the Al0.1Ga0.9As solar cell on the Si substrate as high as 12.9% has been obtained by improving the growth sequence and adopting an Al compositionally graded band emitter layer. A high efficiency monolithic AlGaAs/Si tandem solar cell with the active‐area conversion efficiency of 19.9%...

  15. Structural and magnetic properties of Gd/Fe multilayers grown by pulsed laser deposition

    DEFF Research Database (Denmark)

    Kant, K. Mohan; Bahl, Christian Robert Haffenden; Pryds, Nini;

    This work investigates structural and magnetic properties of Gd/Fe multilayered thin films grown by pulsed laser deposition onto Si (001) substrates at room temperature. The Fe layer thickness is varied from 70 to 150 nm and its effect on structural and magnetic properties of Gd/Fe multilayers has...... been explored. The samples have a 10 nm Ag capping layer to prevent oxidation during the processing. Two magnetization saturation plateaus were observed in the magnetization vs field isotherm at 290 K, in parallel configuration and these plateau values correspond to that of MFe and MFe + MGd....

  16. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

    Science.gov (United States)

    Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko; Puurunen, Riikka L.

    2013-01-01

    Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas-solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic-organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

  17. ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions

    Science.gov (United States)

    Guziewicz, E.; Godlewski, M.; Krajewski, T.; Wachnicki, Ł.; Szczepanik, A.; Kopalko, K.; Wójcik-Głodowska, A.; Przeździecka, E.; Paszkowicz, W.; Łusakowska, E.; Kruszewski, P.; Huby, N.; Tallarida, G.; Ferrari, S.

    2009-06-01

    We report on zinc oxide thin films grown by atomic layer deposition at a low temperature, which is compatible with a low thermal budget required for some novel electronic devices. By selecting appropriate precursors and process parameters, we were able to obtain films with controllable electrical parameters, from heavily n-type to the resistive ones. Optimization of the growth process together with the low temperature deposition led to ZnO thin films, in which no defect-related photoluminescence bands are observed. Such films show anticorrelation between mobility and free-electron concentration, which indicates that low n electron concentration is a result of lower number of defects rather than the self-compensation effect.

  18. Biomolecular papain thin films grown by matrix assisted and conventional pulsed laser deposition: A comparative study

    Science.gov (United States)

    György, E.; Pérez del Pino, A.; Sauthier, G.; Figueras, A.

    2009-12-01

    Biomolecular papain thin films were grown both by matrix assisted pulsed laser evaporation (MAPLE) and conventional pulsed laser deposition (PLD) techniques with the aid of an UV KrF∗ (λ =248 nm, τFWHM≅20 ns) excimer laser source. For the MAPLE experiments the targets submitted to laser radiation consisted on frozen composites obtained by dissolving the biomaterial powder in distilled water at 10 wt % concentration. Conventional pressed biomaterial powder targets were used in the PLD experiments. The surface morphology of the obtained thin films was studied by atomic force microscopy and their structure and composition were investigated by Fourier transform infrared spectroscopy. The possible physical mechanisms implied in the ablation processes of the two techniques, under comparable experimental conditions were identified. The results showed that the growth mode, surface morphology as well as structure of the deposited biomaterial thin films are determined both by the incident laser fluence value as well as target preparation procedure.

  19. Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

    KAUST Repository

    Qaisi, Ramy M.

    2014-05-15

    We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Method for Improving Mg Doping During Group-III Nitride MOCVD

    Science.gov (United States)

    Creighton, J. Randall; Wang, George T.

    2008-11-11

    A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.

  1. Optical and Magnetic Properties of Fe-Doped GaN Diluted Magnetic Semiconductors Prepared by MOCVD Method

    Institute of Scientific and Technical Information of China (English)

    TAG Zhi-Kuo; ZHANG Rong; CUI Xu-Gao; XIU Xiang-Qian; ZHANG Guo-Yu; XIE Zi-Li; GU Shu-Lin; SHI Yi; ZHENG You-Dou

    2008-01-01

    @@ Fe-doped GaN thin films are grown on c-sapphires by metal organic chemical vapour deposition method (MOCVD).Crystalline quality and phase purity are characterized by x-ray diffraction and Raman scattering measurements.There are no detectable second phases formed during growth and no significant degradation in crystalline quality as Fe ions are doped. Fe-related optical transitions are observed in photoluminescence spectra. Magnetic measurements reveal that the films show room-temperature ferromagnetic behaviour. The ferromagnetism may originate from carrier-mediated Fe-doped CaN diluted magnetic semiconductors or nanoscale iron dusters and Fe-N compounds which we have not detected.

  2. Morphology and photoresponse of crystalline antimony film grown on mica by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    Shafa Muhammad

    2016-09-01

    Full Text Available Antimony is a promising material for the fabrication of photodetectors. This study deals with the growth of a photosensitive thin film by the physical vapor deposition (PVD of antimony onto mica surface in a furnace tube. The geometry of the grown structures was studied via scanning electron microscopy (SEM, X-ray diffraction (XRD, energy-dispersive X-ray spectroscopy (EDX and elemental diffraction analysis. XRD peaks of the antimony film grown on mica mostly matched with JCPDF Card. The formation of rhombohedral crystal structures in the film was further confirmed by SEM micrographs and chemical composition analysis. The Hall measurements revealed good electrical conductivity of the film with bulk carrier concentration of the order of 1022 Ω·cm-3 and mobility of 9.034 cm2/Vs. The grown film was successfully tested for radiation detection. The photoresponse of the film was evaluated using its current-voltage characteristics. These investigations revealed that the photosensitivity of the antimony film was 20 times higher than that of crystalline germanium.

  3. Yttria and ceria doped zirconia thin films grown by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    F. Saporiti

    2013-06-01

    Full Text Available The Yttria stabilized Zirconia (YSZ is a standard electrolyte for solid oxide fuel cells (SOFCs, which are potential candidates for next generation portable and mobile power sources. YSZ electrolyte thin films having a cubic single phase allow reducing the SOFC operating temperature without diminishing the electrochemical power density. Films of 8 mol% Yttria stabilized Zirconia (8YSZ and films with addition of 4 weight% Ceria (8YSZ + 4CeO2 were grown by pulsed laser deposition (PLD technique using 8YSZ and 8YSZ + 4CeO2 targets and a Nd-YAG laser (355 nm. Films have been deposited on Soda-Calcia-Silica glass and Si(100 substrates at room temperature. The morphology and structural characteristics of the samples have been studied by means of X-ray diffraction and scanning electron microscopy. Films of a cubic-YSZ single phase with thickness in the range of 1-3 µm were grown on different substrates.

  4. Yttria and ceria doped zirconia thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saporiti, F.; Juarez, R. E., E-mail: cididi@fi.uba.ar [Grupo de Materiales Avanzados, Facultad de Ingenieria, Universidad de Buenos Aires (Argentina); Audebert, F. [Consejo Nacional de Investigaciones Cientificas y Tecnicas (CONICET) (Argentina); Boudard, M. [Laboratoire des Materiaux et du Genie Physique (CNRS), Grenoble (France)

    2013-11-01

    The Yttria stabilized Zirconia (YSZ) is a standard electrolyte for solid oxide fuel cells (SOFCs), which are potential candidates for next generation portable and mobile power sources. YSZ electrolyte thin films having a cubic single phase allow reducing the SOFC operating temperature without diminishing the electrochemical power density. Films of 8 mol% Yttria stabilized Zirconia (8YSZ) and films with addition of 4 weight% Ceria (8YSZ + 4CeO{sub 2}) were grown by pulsed laser deposition (PLD) technique using 8YSZ and 8YSZ + 4CeO{sub 2} targets and a Nd-YAG laser (355 nm). Films have been deposited on Soda-Calcia-Silica glass and Si(100) substrates at room temperature. The morphology and structural characteristics of the samples have been studied by means of X-ray diffraction and scanning electron microscopy. Films of a cubic-YSZ single phase with thickness in the range of 1-3 Micro-Sign m were grown on different substrates (author)

  5. Structural and electrical properties of tantalum oxide films grown by photo-assisted pulsed laser deposition

    Science.gov (United States)

    Zhang, Jun-Ying; Boyd, Ian W.

    2002-01-01

    We describe the growth of thin films of Ta 2O 5 on quartz and silicon (1 0 0) substrates by an in situ photo-assisted pulsed laser deposition (photo-PLD) using radiation from a Nd:YAG laser (wavelength, λ=532 nm) to stimulate the ablation, and from an excimer lamp to excite additional photochemistry. The layers grown were investigated by Fourier transform infrared (FT-IR) spectroscopy, UV spectrophotometry, atomic force microscopy (AFM), ellipsometry and electrical measurements. We have found that they exhibit a significant improvement in microstructure, and optical and electrical properties compared with conventional PLD films prepared under, otherwise, identical conditions. For example, FT-IR results showed that the suboxide content in the as-grown films deposited by the photo-PLD process is less, while the leakage current density was an order of magnitude less at around 10 -6 A/cm 2 at a bias of 1 V. These results indicate that this photo-PLD process approach can be advantageous for dielectric and optical oxide film growth.

  6. High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition.

    Science.gov (United States)

    Amani, Matin; Burke, Robert A; Ji, Xiang; Zhao, Peida; Lien, Der-Hsien; Taheri, Peyman; Ahn, Geun Ho; Kirya, Daisuke; Ager, Joel W; Yablonovitch, Eli; Kong, Jing; Dubey, Madan; Javey, Ali

    2016-07-26

    One of the major challenges facing the rapidly growing field of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is the development of growth techniques to enable large-area synthesis of high-quality materials. Chemical vapor deposition (CVD) is one of the leading techniques for the synthesis of TMDCs; however, the quality of the material produced is limited by defects formed during the growth process. A very useful nondestructive technique that can be utilized to probe defects in semiconductors is the room-temperature photoluminescence (PL) quantum yield (QY). It was recently demonstrated that a PL QY near 100% can be obtained in MoS2 and WS2 monolayers prepared by micromechanical exfoliation by treating samples with an organic superacid: bis(trifluoromethane)sulfonimide (TFSI). Here we have performed a thorough exploration of this chemical treatment on CVD-grown MoS2 samples. We find that the as-grown monolayers must be transferred to a secondary substrate, which releases strain, to obtain high QY by TFSI treatment. Furthermore, we find that the sulfur precursor temperature during synthesis of the MoS2 plays a critical role in the effectiveness of the treatment. By satisfying the aforementioned conditions we show that the PL QY of CVD-grown monolayers can be improved from ∼0.1% in the as-grown case to ∼30% after treatment, with enhancement factors ranging from 100 to 1500× depending on the initial monolayer quality. We also found that after TFSI treatment the PL emission from MoS2 films was visible by eye despite the low absorption (5-10%). The discovery of an effective passivation strategy will speed the development of scalable high-performance optoelectronic and electronic devices based on MoS2.

  7. Multi-wafer growth of GaInAs photodetectors on 4" InP by MOCVD for SWIR imaging applications

    Science.gov (United States)

    Furlong, Mark J.; Mattingley, Mark; Lim, Sung Wook; Geen, Matthew; Jones, Wynne

    2014-06-01

    Photodiodes based on the GaInAs/InP material system responding in the 1.3-1.7 μm wavelength range are of interest in a wide range of applications, from optical power and channel monitors in telecommunication systems through to advanced night vision imaging using large format focal plane type detectors for defense and security applications. Here we report on our results of GaInAs PIN photo detector structures grown on 2", 3" and 4" InP substrates by low pressure Metalorganic Chemical Vapor Deposition (MOCVD) in both standard and new larger volume format reactor configurations. High quality, lattice matched InP/GaInAs epitaxial layers were grown and we demonstrate that when moving to larger platen configurations, high degree of thickness uniformity (improved performance.

  8. Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sammelselg, Väino, E-mail: vaino.sammelselg@ut.ee [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia); Institute of Chemistry, University of Tartu, Ravila 14a, 50411 Tartu (Estonia); Netšipailo, Ivan; Aidla, Aleks; Tarre, Aivar; Aarik, Lauri; Asari, Jelena; Ritslaid, Peeter; Aarik, Jaan [Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia)

    2013-09-02

    Etching rate of technologically important metal oxide thin films in hot sulphuric acid was investigated. The films of Al-, Ti-, Cr-, and Ta-oxides studied were grown by atomic layer deposition (ALD) method on silicon substrates from different precursors in large ranges of growth temperatures (80–900 °C) in order to reveal process parameters that allow deposition of coatings with higher chemical resistance. The results obtained demonstrate that application of processes that yield films with lower concentration of residual impurities as well as crystallization of films in thermal ALD processes leads to significant decrease of etching rate. Crystalline films of materials studied showed etching rates down to values of < 5 pm/s. - Highlights: • Etching of atomic layer deposited thin metal oxide films in hot H{sub 2}SO{sub 4} was studied. • Smallest etching rates of < 5 pm/s for TiO{sub 2}, Al{sub 2}O{sub 3}, and Cr{sub 2}O{sub 3} were reached. • Highest etching rate of 2.8 nm/s for Al{sub 2}O{sub 3} was occurred. • Remarkable differences in etching of non- and crystalline films were observed.

  9. Biocidal Silver and Silver/Titania Composite Films Grown by Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    D. W. Sheel

    2008-01-01

    Full Text Available This paper describes the growth and testing of highly active biocidal films based on photocatalytically active films of TiO2, grown by thermal CVD, functionally and structurally modified by deposition of nanostructured silver via a novel flame assisted combination CVD process. The resulting composite films are shown to be highly durable, highly photocatalytically active and are also shown to possess strong antibacterial behaviour. The deposition control, arising from the described approach, offers the potential to control the film nanostructure, which is proposed to be crucial in determining the photo and bioactivity of the combined film structure, and the transparency of the composite films. Furthermore, we show that the resultant films are active to a range of organisms, including Gram-negative and Gram-positive bacteria, and viruses. The very high-biocidal activity is above that expected from the concentrations of silver present, and this is discussed in terms of nanostructure of the titania/silver surface. These properties are especially significant when combined with the well-known durability of CVD deposited thin films, offering new opportunities for enhanced application in areas where biocidal surface functionality is sought.

  10. Tilted bulk heterojunction organic photovoltaic cells grown by oblique angle deposition

    Science.gov (United States)

    Li, Ning; Forrest, Stephen R.

    2009-09-01

    We demonstrate small molecule bulk heterojunction organic photovoltaic cells using oblique angle vacuum deposition. Obliquely deposited donor chloroaluminum phthalocyanine (ClAlPc) films on indium tin oxide have surface feature sizes of ˜30 nm, resulting in ClAlPc/C60 donor-acceptor heterojunctions (HJs) with approximately twice the interface area of HJs grown at normal incidence. This results in nearly twice the external quantum efficiency in the ClAlPc absorption band compared with analogous, planar HJs. The efficiency increase is attributed to the increased surface area presented by the donor-acceptor junction to the incident illumination by ClAlPc protrusions lying obliquely to the substrate plane formed during deposition. The power conversion efficiency improves from (2.0±0.1)% to (2.8±0.1)% under 1 sun, AM 1.5G simulated solar illumination. Similarly, the power efficiency of copper phthalocyanine/C60 organic photovoltaic cells is increased from (1.3±0.1)% to (1.7±0.1)%.

  11. Co3O4 protective coatings prepared by Pulsed Injection Metal Organic Chemical Vapour Deposition

    DEFF Research Database (Denmark)

    Burriel, M.; Garcia, G.; Santiso, J.

    2005-01-01

    Cobalt oxide films were grown by Pulsed Injection Metal Organic Chemical Vapour Deposition (PI-MOCVD) using Co(acac)(3) (acac=acetylacetonate) precursor dissolved in toluene. The structure, morphology and growth rate of the layers deposited on silicon substrates were studied as a function...... of deposition temperature. Pure Co3O4 spinel structure was found for deposition temperatures ranging from 360 to 540 degreesC. The optimum experimental parameters to prepare dense layers with a high growth rate were determined and used to prepare corrosion protective coatings for Fe-22Cr metallic interconnects...

  12. Lithium outdiffusion in LiTi2O4 thin films grown by pulsed laser deposition

    Science.gov (United States)

    Mesoraca, S.; Kleibeuker, J. E.; Prasad, B.; MacManus-Driscoll, J. L.; Blamire, M. G.

    2016-11-01

    We report surface chemical cation composition analysis of high quality superconducting LiTi2O4 thin films, grown epitaxially on MgAl2O4 (111) substrates by pulsed laser deposition. The superconducting transition temperature of the films was 13.8 K. Surface chemical composition is crucial for the formation of a good metal/insulator interface for integrating LiTi2O4 into full-oxide spin-filtering devices in order to minimize the formation of structural defects and increase the spin polarisation efficiency. In consideration of this, we report a detailed angle resolved x-ray photoelectron spectroscopy analysis. Results show Li segregation at the surface of LiTi2O4 films. We attribute this process due to outdiffusion of Li toward the outermost LiTi2O4 layers.

  13. III-nitride quantum cascade detector grown by metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yu, E-mail: yusong@princeton.edu; Huang, Tzu-Yung; Badami, Pranav; Gmachl, Claire [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540 (United States); Bhat, Rajaram; Zah, Chung-En [Corning Incorporated, Corning, New York 14831 (United States)

    2014-11-03

    Quantum cascade (QC) detectors in the GaN/Al{sub x}Ga{sub 1−x}N material system grown by metal organic chemical vapor deposition are designed, fabricated, and characterized. Only two material compositions, i.e., GaN as wells and Al{sub 0.5}Ga{sub 0.5}N as barriers are used in the active layers. The QC detectors operates around 4 μm, with a peak responsivity of up to ∼100 μA/W and a detectivity of up to 10{sup 8} Jones at the background limited infrared performance temperature around 140 K.

  14. Characterisation of molecular thin films grown by organic molecular beam deposition

    CERN Document Server

    Bayliss, S M

    2000-01-01

    This work concerns the growth and characterisation of molecular thin films in an ultra high vacuum regime by organic molecular beam deposition (OMBD). Films of three different molecular materials are grown, namely free base phthalocyanine (H sub 2 Pc), perylene 3,4,9,10-tetracarboxylic dianhydride (PTCDA) and aluminium tris-8-hydroxyquinoline (Alq sub 3). The relationship between the growth parameters such as film thickness, growth rate, and substrate temperature during and after growth, and the structural, optical and morphological properties of the film are investigated. These investigations are carried out using various ex-situ techniques. X-ray diffraction, Raman spectroscopy and electronic absorption spectroscopy are used to probe the bulk film characteristics, whilst Nomarski microscopy and atomic force microscopy are used to study the surface morphology. Three different levels of influence of the growth parameters on the film properties are observed. In the case of H sub 2 Pc, two crystal phases are fo...

  15. Functionalization of Hydrogenated Chemical Vapour Deposition-Grown Graphene by On-Surface Chemical Reactions.

    Science.gov (United States)

    Drogowska, Karolina; Kovaříček, Petr; Kalbáč, Martin

    2017-03-23

    The reactivity of hydrogenated graphene when treated with oxidising agents, KMnO4 and KIO4 , as well as alkylated with benzyl bromide (BnBr) was studied. The probed reactions are strictly limited to the partly hydrogenated form of graphene in which most of the hydrogen atoms are located in activated benzylic/allylic positions. This, in turn, clearly demonstrates the presence of hydrogen attached to the graphene lattice. Attachment of the benzyl group was also unequivocally demonstrated by characteristic vibrations recorded in the surface-enhanced Raman spectra, and all reactions were shown to proceed solely on hydrogenated graphene as evidenced by the comparison with pristine chemical vapour deposition-grown graphene.

  16. RAPID COMMUNICATION: ? thin film bilayers grown by pulsed laser ablation deposition

    Science.gov (United States)

    Singh, S. K.; Palmer, S. B.; McK Paul, D.; Lees, M. R.

    1996-09-01

    We have grown superconducting thin films of 0022-3727/29/9/044/img2 (Y-123) on 0022-3727/29/9/044/img3 (PCMO) buffer layers and PCMO overlayers on Y-123 thin films using pulsed laser ablation deposition. For both sets of films below 50 K, the Y-123 layer is superconducting and the zero-field cooled PCMO layer is insulating. The application of a magnetic field of 8 T results in an insulator - metal transition in the PCMO layer. This field-induced conducting state is stable in zero magnetic field at low temperature. The PCMO layer can be returned to an insulating state by annealing above 100 K. This opens the way for the construction of devices incorporating these oxide materials in which the electronic properties of key components such as the substrate or the barrier layer can be switched in a controlled way by the application of a magnetic field.

  17. Edge oxidation effect of chemical-vapor-deposition-grown graphene nanoconstriction.

    Science.gov (United States)

    Iqbal, Muhammad Waqas; Iqbal, Muhammad Zahir; Jin, Xiaozhan; Hwang, Chanyong; Eom, Jonghwa

    2014-03-26

    The edge oxidation effects of chemical-vapor-deposition-grown graphene devices with nanoconstrictions of different sizes are presented. The effects of edge oxidation on the doping level of a nanoconstriction graphene device were identified by Raman spectroscopy and using the back-gate-voltage-dependent resistance. Strong p-type doping was observed as the size of nanoconstriction decreased. The Dirac point of the graphene device shifted toward positive voltage, and the positions of the G and 2D peaks in Raman spectroscopy shifted toward a higher wave number, indicating the p-type doping effect of the graphene device. p-type doping was lifted by deep-ultraviolet light illumination under a nitrogen atmosphere at room temperature. p-type doping was restored by deep-ultraviolet light illumination under an oxygen atmosphere at room temperature. Edge oxidation in the narrow structures explains the origin of the p-type doping effect widely observed in graphene nanodevices.

  18. Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

    Energy Technology Data Exchange (ETDEWEB)

    Härkönen, J. [Helsinki Institute of Physics, CMS Upgrade Project, Helsinki (Finland); Ott, J. [Helsinki Institute of Physics, CMS Upgrade Project, Helsinki (Finland); Laboratory of Radio Chemistry, University of Helsinki (Finland); Mäkelä, M. [Laboratory of Inorganic Chemistry, University of Helsinki (Finland); Arsenovich, T.; Gädda, A.; Peltola, T. [Helsinki Institute of Physics, CMS Upgrade Project, Helsinki (Finland); Tuovinen, E. [Helsinki Institute of Physics, CMS Upgrade Project, Helsinki (Finland); VTT Technical Research Centre of Finland, Microsystem and Nanoelectronics (Finland); Luukka, P.; Tuominen, E. [Helsinki Institute of Physics, CMS Upgrade Project, Helsinki (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Niinistö, J.; Ritala, M. [Laboratory of Inorganic Chemistry, University of Helsinki (Finland)

    2016-09-21

    In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al{sub 2}O{sub 3} field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO{sub 2}, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al{sub 2}O{sub 3} field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al{sub 2}O{sub 3} provides equally low effective surface recombination velocity as thermally oxidized Si/SiO{sub 2} interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MΩ resistances with a few µm of physical size required in ultra-fine pitch pixel detectors.

  19. Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors

    Science.gov (United States)

    Härkönen, J.; Ott, J.; Mäkelä, M.; Arsenovich, T.; Gädda, A.; Peltola, T.; Tuovinen, E.; Luukka, P.; Tuominen, E.; Junkes, A.; Niinistö, J.; Ritala, M.

    2016-09-01

    In this report we cover two special applications of Atomic Layer Deposition (ALD) thin films to solve these challenges of the very small size pixel detectors. First, we propose to passivate the p-type pixel detector with ALD grown Al2O3 field insulator with a negative oxide charge instead of using the commonly adopted p-stop or p-spray technologies with SiO2, and second, to use plasma-enhanced ALD grown titanium nitride (TiN) bias resistors instead of the punch through biasing structures. Surface passivation properties of Al2O3 field insulator was studied by Photoconductive Decay (PCD) method and our results indicate that after appropriate annealing Al2O3 provides equally low effective surface recombination velocity as thermally oxidized Si/SiO2 interface. Furthermore, with properly designed annealing steps, the TiN thin film resistors can be tuned to have up to several MΩ resistances with a few μm of physical size required in ultra-fine pitch pixel detectors.

  20. Exploring the potential of laser assisted flow deposition grown ZnO for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, J., E-mail: joana.catarina@ua.pt [Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Cerqueira, A.F.R.; Sousa, M.G.; Santos, N.F. [Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal); Pimentel, A.; Fortunato, E. [CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Cunha, A.F. da; Monteiro, T.; Costa, F.M. [Departamento de Física & I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro (Portugal)

    2016-07-01

    Zinc oxide (ZnO) is a widely studied wide band gap semiconductor with applications in several fields, namely to enhance solar cells efficiency. Its ability to be grown in a wide variety of nanostructured morphologies, allowing the designing of the surface area architecture constitutes an important advantage over other semiconductors. Laser assisted flow deposition (LAFD) is a recently developed growth method, based on a vapour-solid mechanism, which proved to be a powerful approach in the production of ZnO micro/nanostructures with different morphologies as well as high crystallinity and optical quality. In the present work we report the use of the LAFD technique to grow functional ZnO nanostructures (nanoparticles and tetrapods) working as nano templates to improve the dye-sensitized solar cells (DSSCs) efficiency. The structural and morphological characterization of the as-grown ZnO crystals were performed by X-ray diffraction and electron microscopy, respectively, and the optical quality was assessed by photoluminescence spectroscopy. DSSCs were produced using a combination of these nanostructures, which were subsequently sensitized with N719 dye. An efficiency of ∼3% was achieved under simulated AM 1.5 illumination conditions for a dye loading time of 1 h. - Highlights: • Laser assisted flow deposition proved to be an efficient technique to produce high quality ZnO. • Active layer formed by an interconnected network of tetrapods and a small amount of nanoparticles. • Efficiency of ∼3% obtained under simulated AM 1.5 illumination conditions.

  1. Characterization of pulsed laser deposition grown V2O3 converted VO2

    Science.gov (United States)

    Majid, Suhail; Shukla, D. K.; Rahman, F.; Gautam, Kamini; Sathe, V. G.; Choudhary, R. J.; Phase, D. M.

    2016-10-01

    Controllable tuning of Metal-insulator transition in VxOy thin film has been a field of extensive research. However controlled synthesis of desired Vanadium oxide phase is a challenging task. We have successfully achieved VO2 phase on Silicon substrate after post deposition annealing treatment to the PLD grown as deposited V2O3 thin films. The annealed thin film was characterized by x-ray diffraction (XRD), resistivity, Raman spectroscopy, X-ray absorption spectroscopy (XAS) and X-ray photoelectron spectroscopy (XPS) measurements. XRD confirms the crystalline nature and growth of VO2 phase in thin film. The characteristic MIT was observed from resistivity measurements and transition temperature appeared at lower value around 336 K, compared to bulk VO2. The structural transition accompanied with MIT from lower temperature monoclinic phase to higher temperature Rutile phase became evident from temperature dependent Raman measurements. Chemical state of vanadium was examined using XAS and XPS measurements which confirm the presence of +4 oxidation state of vanadium in thin film.

  2. Luminescence and Structure of ZnO Grown by Physical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    R. García-Gutiérrez

    2012-01-01

    Full Text Available Nanostructured ZnO was deposited on different substrates (Si, SiO2, and Au/SiO2 by an enhanced physical vapor deposition technique that presents excellent luminescent properties. This technique consists in a horizontal quartz tube reactor that uses ultra-high purity Zn and UHP oxygen as precursors. The morphology and structure of ZnO grown in this work were studied by electron microscopy and X-ray diffraction. The XRD patterns revealed the highly crystalline phase of wurtzite polycrystalline structure, with a preferred (1011 growth direction. Room temperature cathodoluminescence studies revealed two features in the luminescence properties of the ZnO obtained by this technique, first a high-intensity narrow peak centered at 390 nm (~3.2 eV corresponding to a near band-to-band emission, and secondly, a broad peak centered around 517 nm (2.4 eV, the typical green-yellow luminescence, related to an unintentionally doped ZnO.

  3. Control of native acceptor density in epitaxial Cu2O thin films grown by electrochemical deposition

    Science.gov (United States)

    Ashida, Atsushi; Sato, Shunsuke; Yoshimura, Takeshi; Fujimura, Norifumi

    2017-06-01

    Controlling the native carrier is essential for using Cu2O in devices such as solar cells. The origin of the native p-type carrier in Cu2O is thought to be copper vacancies (VCu). In this work, epitaxially grown Cu2O thin films were prepared by electrochemical deposition at a low temperature of 45 °C on a Pt (111) cathodic electrode. The sources of Cu and O for Cu2O were Cu2+ and OH- in the electrolyte and the ion concentrations were changed to control the stoichiometry of deposition and the density of VCu. The density of ionized acceptors (NA+) in the Cu2O films was evaluated by the C-V properties measured with Schottky electrodes. NA+ did not depend on [Cu2+], whereas NA+ increased with increasing [OH-] when [OH-] was larger than 10-3 mol/L (electrolyte pH >11) with [Cu2+] fixed at 10-1 mol/L. The ion concentration dependence of NA+ and the dependence of the total cathodic current density revealed that the generation of VCu was affected by a complex combination of the ion concentrations and film growth rate.

  4. Layered MoS{sub 2} grown on c-sapphire by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ho, Yen-Teng; Ma, Chun-Hao; Luong, Tien-Tung; Wei, Lin-Lung; Yen, Tzu-Chun; Chu, Yung-Ching; Tu, Yung-Yi [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu (China); Hsu, Wei-Ting; Chang, Wen-Hao [Department of Electrophysics, National Chiao Tung University, Hsinchu (China); Pande, Krishna Prasad [Department of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu (China); Chang, Edward Yi [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu (China)

    2015-03-01

    Layered growth of molybdenum disulphide (MoS{sub 2}) was successfully achieved by pulsed laser deposition (PLD) method on c -plane sapphire substrate. Growth of monolayer to a few monolayer MoS{sub 2}, dependent on the pulsed number of excimer laser in PLD is demonstrated, indicating the promising controllability of layer growth. Among the samples with various pulse number deposition, the frequency difference (A{sub 1g}-E{sup 1}{sub 2g}) in Raman analysis of the 70 pulse sample is estimated as 20.11 cm{sup -1}, suggesting a monolayer MoS{sub 2} was obtained. Two-dimensional (2D) layer growth of MoS{sub 2} is confirmed by the streaky reflection high energy electron diffraction (RHEED) patterns during growth and the cross-sectional view of transmission electron microscopy (TEM). The in-plane relationship, (0006) sapphire//(0002)MoS{sub 2} and [2 anti 1 anti 10] sapphire//[0 anti 1 anti 10]MoS{sub 2} is determined. The results imply that PLD is suitable for layered MoS{sub 2} growth. Additionally, the oxide states of Mo 3d core level spectra of PLD grown MoS{sub 2}, analysed by X-ray photoelectron spectroscopy (XPS), can be effectively reduced by adopting a post sulfurization process. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

    Science.gov (United States)

    Karamat, S.; Sonuşen, S.; Çelik, Ü.; Uysallı, Y.; Oral, A.

    2016-04-01

    In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH)2 for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and LiOH was ∼6 min and for NaOH and Ba(OH)2 it was ∼15 min. KOH and LiOH peeled off graphene very efficiently as compared to NaOH and Ba(OH)2 from the Pt electrode. In case of copper, the peeling time is ∼3-5 min. Different characterizations like optical microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy were done to analyze the as grown and transferred graphene samples.

  6. Palladium deposits spontaneously grown on nickel foam for electro-catalyzing methanol oxidation: Effect of precursors

    Science.gov (United States)

    Niu, Xiangheng; Zhao, Hongli; Lan, Minbo

    2016-02-01

    Methanol, a high-energy substance, is widely used for green fuel cells. However, the sluggish electrochemical methanol oxidation reaction (MOR) on state-of-the-art catalysts still requires for exploring high-performance and low-cost materials to further promote the reaction kinetics at low overpotentials. Here we carried out the first electrocatalytic comparison study of two Ni foam-supported Pd nanomaterials (Pd-2-Ni and Pd-4-Ni, respectively), obtained through the spontaneous galvanic replacement of Ni with different palladic precursors ([PdCl4]2- and [PdCl6]2-, respectively), toward MOR. With replacement, Pd deposits with discrepant arrangements and coverages were grown on the porous Ni support. Compared to commercial Pd/C, both Pd-2-Ni and Pd-4-Ni exhibited better mass activity and catalytic durability for MOR in alkaline media. More interestingly, different palladic precursors made a significant effect on the catalytic performance of the Ni foam-supported Pd deposits. In Pd-4-Ni, the 2:1 stoichiometric replacement of Ni with [PdCl6]2- enabled the incompact arrangement of Pd structures, with more exposure of Ni atoms adjoined to Pd atoms on the catalytic interface compared to Pd-2-Ni. As a result, with the favorable Ni-neighbor-Pd regime and the higher utilization efficiency of Pd atoms, the synthesized Pd-4-Ni catalyst provided a mass activity of approximately 1.5 times higher than Pd-2-Ni toward MOR.

  7. Frictional Properties of UV illuminated ZnO Thin Films Grown by Pulsed Laser Deposition

    Science.gov (United States)

    Chiu, Hsiang-Chih; Chang, Huan-Pu; Lo, Fang-Yu; Yeh, Yu-Ting; Department of Physics, National Taiwan Normal University Collaboration

    Zinc Oxide (ZnO) nanostructures have potential applications in nano-electro-mechanical systems (NEMS) due to their unique physical properties. ZnO is also an excellent lubricant and hence a promising candidate for protective coatings in NEMS. By means of atomic force microscopy (AFM), we have investigated the frictional properties of ZnO thin films prepared by pulsed laser deposition technique. In addition, UV illumination is used to convert the surface wettability of ZnO thin films from being more hydrophobic to superhydrophilic via the photo-catalyst effect. We found that the frictional properties of the UV illuminated, superhydrophilic ZnO surface are strongly dependent on the environment humidity. While for hydrophobic ZnO, no such dependence is found. The observed frictional behaviors can be explained by the interplay between the surface roughness, environmental humidity and the presence of nanoscale capillary condensation forming between surface asperities at the tip-ZnO contact. Our results might find applications in future ZnO related NEMS. Frictional Properties of UV illuminated ZnO Thin Films Grown by Pulsed Laser Deposition.

  8. Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Karamat, S., E-mail: shumailakaramat@gmail.com [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey); COMSATS Institute of Information Technology, Islamabad 54000 (Pakistan); Sonuşen, S. [Sabancı Üniversitesi (SUNUM), İstanbul 34956 (Turkey); Çelik, Ü. [Nanomagnetics Instruments, Ankara (Turkey); Uysallı, Y. [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey); Oral, A., E-mail: orahmet@metu.edu.tr [Department of Physics, Middle East Technical University, Ankara 06800 (Turkey)

    2016-04-15

    Graphical abstract: - Highlights: • Graphene layers were grown on Pt and Cu foil via ambient pressure chemical vapor deposition method and for the delicate removal of graphene from metal catalysts, electrolysis method was used by using different alkaline (sodium hydroxide, potassium hydroxide, lithium hydroxide and barium hydroxide). • The delamination speed of PMMA/graphene stack was higher during the KOH and LiOH electrolysis as compare to NaOH and Ba(OH){sub 2}. Ba(OH){sub 2} is not advisable because of the residues left on the graphene surface which would further trapped in between graphene and SiO{sub 2}/Si surface after transfer. The average peeling time in case of Pt electrode is ∼6 min for KOH and LiOH and ∼15 min for NaOH and Ba(OH){sub 2}. • Electrolysis method also works for the Cu catalyst. The peeling of graphene was faster in the case of Cu foil due to small size of bubbles which moves faster between the stack and the electrode surface. The average peeling time was ∼3–5 min. • XPS analysis clearly showed that the Pt substrates can be re-used again. Graphene layer was transferred to SiO{sub 2}/Si substrates and to the flexible substrate by using the same peeling method. - Abstract: In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH){sub 2} for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and Li

  9. The mechanical properties of thin alumina film deposited by metal-organic chemical vapour deposition

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Gellings, P.J.; Vendel, van de D.; Metselaar, H.S.C.; Corbach, van H.D.; Fransen, T.

    1995-01-01

    Amorphous alumina films were deposited by metal-organic chemical vapour deposition (MOCVD) on stainless steel, type AISI 304. The MOCVD experiments were performed in nitrogen at low and atmospheric pressures. The effects of deposition temperature, growth rate and film thickness on the mechanical pro

  10. In-plane orientation and composition dependences of crystal structure and electrical properties of {100}-oriented Pb(Zr,Ti)O3 films grown on (100) Si substrates by metal organic chemical vapor deposition

    Science.gov (United States)

    Okamoto, Shoji; Sankara Rama Krishnan, P. S.; Okamoto, Satoshi; Yokoyama, Shintaro; Akiyama, Kensuke; Funakubo, Hiroshi

    2017-10-01

    In-plane orientation-controlled Pb(Zr x ,Ti1‑ x )O3 (PZT) films with a thickness of approximately 2 µm and a Zr/(Zr + Ti) ratio of 0.39–0.65 were grown on (100) Si substrates by pulsed metal–organic chemical vapor deposition (MOCVD). In-plane-oriented epitaxial PZT films and in-plane random fiber-textured PZT films with {100} out-of-plane orientation were grown on (100)c SrRuO3//(100)c LaNiO3//(100) CeO2//(100) YSZ//(100) Si and (100)c SrRuO3/(100)c LaNiO3/(111) Pt/TiO2/SiO2/(100) Si substrates, respectively. The effects of Zr/(Zr + Ti) ratio and in-plane orientation on the crystal structure, dielectric, ferroelectric, and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that the epitaxial PZT films had a higher volume fraction of (100) orientation than the fiber-textured PZT films in the tetragonal Zr/(Zr + Ti) ratio region. A large difference was not detected between the epitaxial films and the fiber-textured films for Zr/(Zr + Ti) ratio dependence of the dielectric constant, and remanent polarization. However, in the rhombohedral phase region [Zr/(Zr + Ti) = 0.65], coercive field was found to be 1.5-fold different between the epitaxial and fiber-textured PZT films. The maximum field-induced strains measured at 0–100 kV/cm by scanning atomic force microscopy were obtained at approximately Zr/(Zr + Ti) = 0.50 and were about 0.5 and 0.3% for the epitaxial and fiber-textured PZT films, respectively.

  11. 3D CFD Simulations of MOCVD Synthesis System of Titanium Dioxide Nanoparticles

    Directory of Open Access Journals (Sweden)

    Siti Hajar Othman

    2013-01-01

    Full Text Available This paper presents the 3-dimensional (3D computational fluid dynamics (CFD simulation study of metal organic chemical vapor deposition (MOCVD producing photocatalytic titanium dioxide (TiO2 nanoparticles. It aims to provide better understanding of the MOCVD synthesis system especially of deposition process of TiO2 nanoparticles as well as fluid dynamics inside the reactor. The simulated model predicts temperature, velocity, gas streamline, mass fraction of reactants and products, kinetic rate of reaction, and surface deposition rate profiles. It was found that temperature distribution, flow pattern, and thermophoretic force considerably affected the deposition behavior of TiO2 nanoparticles. Good mixing of nitrogen (N2 carrier gas and oxygen (O2 feed gas is important to ensure uniform deposition and the quality of the nanoparticles produced. Simulation results are verified by experiment where possible due to limited available experimental data. Good agreement between experimental and simulation results supports the reliability of simulation work.

  12. Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu; Park, Kwangwook; Kim, Ci-Hyun; Lee, Dong-Seon; Jho, Young-Dahl; Bae, Si-Young; Lee, Yong-Tak

    2016-05-01

    Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the other hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.

  13. Texture mechanisms and microstructure of biaxial thin films grown by oblique angle deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shetty, A.R.; Karimi, A. [Institut de Physique de la Matiere Condensee (IPMC), Ecole Polytechnique Federale de Lausanne (EPFL), Lausanne (Switzerland)

    2012-08-15

    In order to understand the texture formation mechanism in thin films grown under oblique angle deposition (OAD), TiAlN films were deposited at room temperature (RT) under various incident angles. We show that both in-plane and out-of-plane crystallographic orientations respond strongly to the deposition angle. For {alpha} = 0 , the pole figures show a (111) and (200) mixed out-of-plane orientation with random in-plane alignment. In contrast, under OAD, inclined textures are observed with the (111) direction moving toward the incident flux direction and the (200) moving away, showing substantial in-plane alignment. This observation suggests that TiAlN crystals prefer to grow with the (200) direction perpendicular to the substrate while maintaining the minimization of the surface free energy by maximizing the (111) surface area toward the incident flux. The in-plane texture, which is randomly oriented at normal incidence, gives rise to two preferred orientations under oblique angles - one along the direction of flux and other away from the deposition source. The biaxial texture results from a competition among texture mechanism related to surface mobilities of adatoms, geometrical and directional effects. The surface and cross-section of the films were observed by scanning electron microscopy (SEM). OAD films develop a kind of smooth tiles of a roof structure, with no faceted crystallites. The columns of these films were tilted toward the direction of incident flux. The dependence of (111) texture tilt angle and column angle {beta} on the incidence flux angle {alpha} is evaluated using four well-known models. Transmission electron microscopy (TEM) study reveals a voided, intercolumnar structure with oblique growth toward the flux direction. The selected area diffraction pattern (SAED) pattern supports the pole figure observations. Measurements of the nanoindentation test were performed in order to discuss the change of mechanical properties as a function of incident

  14. Gas phase depletion and flow dynamics in horizontal MOCVD reactors

    Science.gov (United States)

    Van de Ven, J.; Rutten, G. M. J.; Raaijmakers, M. J.; Giling, L. J.

    1986-08-01

    Growth rates of GaAs in the MOCVD process have been studied as a function of both lateral and axial position in horizontal reactor cells with rectangular cross-sections. A model to describe growth rates in laminar flow systems on the basis of concentration profiles under diffusion controlled conditions has been developed. The derivation of the growth rate equations includes the definition of an entrance length for the concentration profile to developed. In this region, growth rates appear to decrease with the 1/3 power of the axial position. Beyond this region, an exponential decrease is found. For low Rayleigh number conditions, the present experimental results show a very satisfactory agreement with the model without parameter fitting for both rectangular and tapered cells, and with both H 2 and N 2 as carrier gases. Theory also predicts that uniform deposition can be obtained over large areas in the flow direction for tapered cells, which has indeed been achieved experimentally. The influence of top-cooling in the present MOCVD system has been considered in more detail. From the experimental results, conclusions could be drawn concerning the flow characteristics. For low Rayleigh numbers (present study ≲ 700) it follows that growth rate distributions correspond with forced laminar flow characteristics. For relatively high Rayleigh numbers (present work 1700-2800), free convective effects with vortex formation are important. These conclusions are not specific for the present system, but apply to horizontal cold-wall reactors in general. On the basis of the present observations, recommendations for a cell design to obtain large area homogeneous deposition have been formulated. In addition, this work supports the conclusion that the final decomposition of trimethylgallium in the MOCVD process mainly takes place at the hot substrate and susceptor and not in the gas phase.

  15. Shape controllability and photoluminescence properties of ZnO nanorods grown by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Terasako, Tomoaki, E-mail: terasako.tomoaki.mz@ehime-u.ac.jp [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan); Murakami, Toshihiro [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan); Yagi, Masakazu [Kagawa National College of Technology, 551 Koda, Takuma-cho, Mitoyo-shi, Kagawa 769-1192 (Japan); Shirakata, Sho [Graduate School of Science and Engineering, Ehime University, 3 Bunkyo-cho, Matsuyama-shi, Ehime 790-8577 (Japan)

    2013-12-31

    Zinc oxide (ZnO) nanorods (NRs) were synthesized on glass substrates and Au seed layers by chemical bath deposition from the aqueous solution of ZnCl{sub 2} and the mixed aqueous solution of zinc acetate dihydrate (ZnAc) and hexamethylenetetramine (HMT) at a low temperature of ∼ 90 °C. Vertically aligned NRs were successfully grown on the Au seed layers. For the NRs synthesized from the ZnCl{sub 2} solution of 0.17 M, when the growth time increased from 15 to 180 min, the average diameter and length increase from ∼ 350 to ∼ 1020 nm and from ∼ 1000 to ∼ 5600 nm, respectively. The increase in average diameter with the concentration of solution was observed on the NRs synthesized from the mixed solution of ZnAc and HMT. The influence of additional HMT was found on the shapes and density of the NRs. Photoluminescence (PL) spectra of the NRs synthesized from the solutions of ZnCl{sub 2} exhibited a dominant orange band (OB) emission at ∼ 640 nm associated with the excess-oxygen atoms. On the other hand, the NRs synthesized from the mixed solution of ZnAc and HMT exhibited a strong near-band-edge (NBE) emission at ∼ 380 nm, suggesting their high crystalline quality. For the NRs synthesized from the mixed solution of ZnAc and HMT, the OB emission is effectively excited at the photon energy corresponding to the A free exciton emission. For the NRs synthesized from the solution of ZnCl{sub 2}, however, the secondary phase Zn(OH){sub 2} formed at the surface regions of the NRs contributes to the excitation process for the OB emission. Photoacoustic (PA) measurements revealed that the intra-band-gap absorption band extending from 400 to 660 nm responsible for nonradiative transitions were suppressed in the NRs synthesized from the mixed solutions of ZnAc and HMT in comparison with those from the ZnCl{sub 2} solutions. - Highlights: • ZnO nanorods (NRs) were grown by Chemical bath deposition. • ZnCl{sub 2} and Zinc acetate dihydrate were used as Zn

  16. Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

    Science.gov (United States)

    Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

    2013-04-07

    We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

  17. MOCVD of thin film photovoltaic solar cells—Next-generation production technology?

    Science.gov (United States)

    Irvine, S. J. C.; Barrioz, V.; Lamb, D.; Jones, E. W.; Rowlands-Jones, R. L.

    2008-11-01

    This paper will review the chalcogenide thin film photovoltaic (PV) solar cells, based on cadmium telluride (CdTe) and copper indium diselenide (CIS) and discuss the potential for metalorganic chemical vapour deposition (MOCVD) to enable more advanced devices in the second generation of CdTe module production. The current generation of production methods is based on physical vapour deposition (PVD) or close-spaced sublimation (CSS). This paper concentrates on the less well-known topic of MOCVD of thin film chalcogenide cells, and in particular that of CdTe. Efficient CdTe PV solar cells (>10% AM1.5) have been demonstrated from deposition of the CdS, CdTe and CdCl 2 films in a single MOCVD chamber. The CdTe layer was doped with As and an additional high As concentration CdTe layer provides effective low resistance contacting without the need for wet etching the surface. The high level of flexibility in using MOCVD has been demonstrated where the CdS window layer has been alloyed with Zn to improve the blue response of the PV device and improve AM1.5 efficiency to 13.3%.

  18. Dynamic scaling and optical properties of Zn(S, O,OH) thin film grown by chemical bath deposition

    Institute of Scientific and Technical Information of China (English)

    Zhang Yi; Li Bo-Yan; Dang Xiang-Yu; Wu Li; Jin Jing; Li Feng-Yan; Ao Jian-Ping; Sun Yun

    2011-01-01

    The scaling behavior and optical properties of Zn(S,O and OH) thin films deposited on soda-lime glass substrates by chemical bath deposition method were studied by combined roughness measurements,scanning electron microscopy and optical properties measurement.From the scaling behaviour,the value of growth scaling exponent β,0.38±0.06,was determined.This value indicated that the Zn(S,O,OH) film growth in the heterogeneous process was influenced by the surface diffusion and shadowing effect.Results of the optical properties measurements disclosed that the transmittance of the film was in the region of 70%-88% and the optical properties of the film grown for 40 min were better than those grown under other conditions.The energy band gap of the film deposited with 40 min was around 3.63 eV.

  19. Surface Analysis of Hexagonal Boron Nitride Grown by Chemical Vapor Deposition

    Science.gov (United States)

    Robinson, Zachary; Hite, J. K.; Eddy, C. R., Jr.; Bermudez, V. M.; Feigelson, B. N.

    Hexagonal boron nitride (hBN) is an important material for development of 2-dimensional heterostructures. Chemical vapor deposition of hBN on Cu-foil substrates is one possible route towards large-scale production of hBN films with low defect density. Therefore, studying the growth kinetics of hBN on different orientations of Cu is an important first step towards understanding and controlling the growth process. In this work, hBN was simultaneously grown on Cu(111), Cu(100), Cu(110), and Cu-foil in order to investigate how the different substrate orientations affect the hBN overlayer. The post-growth crystallographic orientations were measured with electron backscatter diffraction (EBSD), and film coverages we measured with XPS. In addition, a grazing-incidence infrared reflection absorption spectroscopy (IRRAS) technique was developed to quickly characterize each hBN film. It was found that the growth rate was inversely proportional to the surface free energy of the Cu surface, with Cu(111) having the most h-BN surface coverage. The Cu foil predominately crystallized with a (100) surface orientation, and had a film coverage very close to the Cu(100).

  20. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Joucken, Frédéric, E-mail: frederic.joucken@unamur.be; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-08-15

    Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10{sup 12} cm{sup −2}) together with quite low carrier mobility (∼1350 cm{sup 2}/V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  1. Photoelectrochemical Properties of CuO Grown by Using a Modified Chemical Bath Deposition Method

    Energy Technology Data Exchange (ETDEWEB)

    Ha, Jin-wook; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2016-06-15

    In this study, cupric oxide (CuO) nanorods were grown on the fluorine-doped tin oxide (FTO) glass substrate using a modified-chemical bath deposition (M-CBD) method. We investigated the morphology, structural, optical and photoelectrochemical properties of the cupric oxide nanorods with various growth durations by using field-emission scanning-electron microscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy (UV-vis) and three-electrode potentiostat, respectively. In this work, we found that the morphologies, thickness, growth rate, crystallinities, grain sizes and optical bandgap were controllable on the growth duration, which affected photocurrent density and photo-stability. The highest growth rate of CuO nanorods was 126 nm/min. From the XRD measurement, we also confirmed that (020) directional growth affected the growth of the CuO nanorods. A maximum photocurrent density of-1.88 mA/cm² at -0.55 V (vs. SCE) and high photo-stability value about 40% was obtained with 10 minutes growth duration.

  2. Reproducibility and off-stoichiometry issues in nickelate thin films grown by pulsed laser deposition

    Science.gov (United States)

    Preziosi, Daniele; Sander, Anke; Barthélémy, Agnès; Bibes, Manuel

    2017-01-01

    Rare-earth nickelates are strongly correlated oxides displaying a metal-to-insulator transition at a temperature tunable by the rare-earth ionic radius. In PrNiO3 and NdNiO3, the transition is very sharp and shows an hysteretic behavior akin to a first-order transition. Both the temperature at which the transition occurs and the associated resistivity change are extremely sensitive to doping and therefore to off-stoichiometry issues that may arise during thin film growth. Here we report that strong deviations in the transport properties of NdNiO3 films can arise in films grown consecutively under nominally identical conditions by pulsed laser deposition; some samples show a well-developed transition with a resistivity change of up to five orders of magnitude while others are metallic down to low temperatures. Through a detailed analysis of in-situ X-ray photoelectron spectroscopy data, we relate this behavior to large levels of cationic off-stoichoimetry that also translate in changes in the Ni valence and bandwidth. Finally, we demonstrate that this lack of reproducibility can be remarkably alleviated by using single-phase NdNiO3 targets.

  3. Current-Perpendicular-to-Plane Magnetoresistance in Chemical Vapor Deposition-Grown Multilayer Graphene

    Directory of Open Access Journals (Sweden)

    Sandipan Pramanik

    2013-09-01

    Full Text Available Current-perpendicular-to-plane (CPP magnetoresistance (MR effects are often exploited in various state-of-the-art magnetic field sensing and data storage technologies. Most of the CPP-MR devices are artificial layered structures of ferromagnets and non-magnets, and in these devices, MR manifests, due to spin-dependent carrier transmission through the constituent layers. In this work, we explore another class of artificial layered structure in which multilayer graphene (MLG is grown on a metallic substrate by chemical vapor deposition (CVD. We show that depending on the nature of the graphene-metal interaction, these devices can also exhibit large CPP-MR. Magnetoresistance ratios (>100% are at least two orders of magnitude higher than “transferred” graphene and graphitic samples reported in the literature, for a comparable temperature and magnetic field range. This effect is unrelated to spin injection and transport and is not adequately described by any of the MR mechanisms known to date. The simple fabrication process, large magnitude of the MR and its persistence at room temperature make this system an attractive candidate for magnetic field sensing and data storage applications and, also, underscore the need for further fundamental investigations on graphene-metal interactions.

  4. Density functional theory predictions of the composition of atomic layer deposition-grown ternary oxides.

    Science.gov (United States)

    Murray, Ciaran; Elliott, Simon D

    2013-05-01

    The surface reactivity of various metal precursors with different alkoxide, amide, and alkyl ligands during the atomic layer deposition (ALD) of ternary oxides was determined using simplified theoretical models. Quantum chemical estimations of the Brønsted reactivity of a metal complex precursor at a hydroxylated surface are made using a gas-phase hydrolysis model. The geometry optimized structures and energies for a large suite of 17 metal precursors (including cations of Mg, Ca, Sr, Sc, Y, La, Ti, Zr, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, and Ga) with five different anionic ligands (conjugate bases of tert-butanol, tetramethyl heptanedione, dimethyl amine, isopropyl amidine, and methane) and the corresponding hydrolyzed complexes are calculated using density functional theory (DFT) methods. The theoretically computed energies are used to determine the energetics of the model reactions. These DFT models of hydrolysis are used to successfully explain the reactivity and resulting stoichiometry in terms of metal cation ratios seen experimentally for a variety of ALD-grown ternary oxide systems.

  5. Luminescence properties of lanthanide and ytterbium lanthanide titanate thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Hansen, Per-Anders, E-mail: p.a.hansen@kjemi.uio.no; Fjellvåg, Helmer; Nilsen, Ola [Department of Chemistry, Centre for Materials Science and Nanotechnology, University of Oslo, Sem Sælandsvei 26, 0371 Oslo (Norway); Finstad, Terje G. [Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, Sem Sælandsvei 24, 0371 Oslo (Norway)

    2016-01-15

    Lanthanide based luminescent materials are highly suitable as down conversion materials in combination with a UV-absorbing host material. The authors have used TiO{sub 2} as the UV-absorbing host material and investigated the energy transfer between TiO{sub 2} and 11 different lanthanide ions, Ln{sup 3+} (Ln = La, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) in thin films grown by atomic layer deposition. They have also investigated the possibility to improve the overall energy transfer from TiO{sub 2} to Yb{sup 3+} with a second Ln{sup 3+}, in order to enhance down conversion. The films were grown at a substrate temperature of 300 °C, using the Ln(thd){sub 3}/O{sub 3} (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and TiCl{sub 4}/H{sub 2}O precursor pairs. The focus of the work is to explore the energy transfer from TiO{sub 2} to Ln{sup 3+} ions, and the energy transfer between Ln{sup 3+} and Yb{sup 3+} ions, which could lead to efficient down conversion. The samples have been characterized by x-ray diffraction, x-ray fluorescence, spectroscopic ellipsometry, and photoluminescence. All films were amorphous as deposited, and the samples have been annealed at 600, 800, and 1000 °C in order to investigate the correlation between the crystallinity and luminescence. The lanthanum titanium oxide samples showed a weak and broad emission centered at 540 nm, which was absent in all the other samples, indicating energy transfer from TiO{sub 2} to Ln{sup 3+} in all other lanthanide samples. In the amorphous phase, all samples, apart from La, Tb, and Tm, showed a typical f-f emission when excited by a 325 nm HeCd laser. None of the samples showed any luminescence after annealing at 1000 °C due to the formation of Ln{sub 2}Ti{sub 2}O{sub 7}. Samples containing Nd, Sm, and Eu show a change in emission spectrum when annealed at 800 °C compared to the as-deposited samples, indicating that the smaller lanthanides crystallize in a different manner than the larger

  6. Electrical and mechanical stability of aluminum-doped ZnO films grown on flexible substrates by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Luka, G., E-mail: gluka@ifpan.edu.pl [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Witkowski, B.S.; Wachnicki, L.; Jakiela, R. [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Virt, I.S. [University of Rzeszow, Rzeszow (Poland); Drohobych Ivan Franko State Pedagogical University, Drohobych (Ukraine); Andrzejczuk, M.; Lewandowska, M. [Faculty of Materials Science and Engineering, Warsaw University of Technology, Warsaw (Poland); Godlewski, M. [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Department of Mathematics and Natural Sciences, College of Science, Cardinal Stefan Wyszynski University, Warsaw (Poland)

    2014-08-01

    Highlights: • Transparent and conductive ZnO:Al films were grown by atomic layer deposition. • The films were grown on flexible substrates at low growth temperatures (110–140 °C). • So-obtained films have low resistivities, of the order of 10{sup −3} Ω cm. • Bending tests indicated a critical bending radius of ≈1.2 cm. • Possible sources of the film resistivity changes upon bending are proposed. - Abstract: Aluminum-doped zinc oxide (AZO) films were grown on polyethylene terephthalate (PET) substrates by atomic layer deposition (ALD) at low deposition temperatures (110–140 °C). The films have low resistivities, ∼10{sup −3} Ω cm, and high transparency (∼90%) in the visible range. Bending tests indicated a critical bending radius of ≈1.2 cm, below which the resistivity changes became irreversible. The films deposited on PET with additional buffer layer are more stable upon bending and temperature changes.

  7. Vanadium Defects Formation Mechanism in Undoped GaN Grown on Silicon

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    V defects in GaN layer grown on Si (111) using metalorganic chemical vapor deposition (MOCVD) were investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM) and energy-dispersive X-ray spectrometer (EDS). Dislocations are the origination of V defects. Stress field around dislocations induce the concentration of C atoms, furthermore, slow growth rate on those {10-11} planes are suggested as being responsible for the initiation of V defects. The formation mechanism of V defects was discussed.

  8. ZnO homoepitaxy on the O polar face of hydrothermal and melt-grown substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, D.J. [Nanovation SARL, Orsay (France); Technical Univ. of Troyes (France); CNRS, Troyes (France); Hosseini Teherani, F. [Nanovation SARL, Orsay (France); Largeteau, A.; Demazeau, G. [ICMCB-CNRS, Bordeaux 1 University (Science and Technology), Pessac (France); Moisson, C.; Turover, D. [Novasic, Savoie Technolac, Arche Bat. 4, BP 267, Le Bourget du Lac (France); Nause, J. [Cermet Inc., Atlanta, GA (United States); Garry, G. [Thales Research, Domaine de Corbeville, Orsay (France); Kling, R.; Gruber, T. [Ulm University, Department of Semiconductor Physics, Ulm (Germany); Waag, A. [Braunschweig Technical University, Institute of Semiconductor Technology, Braunschweig (Germany); Jomard, F.; Galtier, P.; Lusson, A. [LPSC-CNRS, Meudon (France); Monteiro, T.; Soares, M.J.; Neves, A.; Carmo, M.C.; Peres, M. [University of Aveiro, Physics Department, Aveiro (Portugal); Lerondel, G.; Hubert, C. [Technical University of Troyes-CNRS (FRE2671), 12 rue Marie Curie, BP 2060, Troyes (France)

    2007-07-15

    2 cm diameter hydrothermal ZnO crystals were grown and then made into substrates using both mechanical and chemical-mechanical polishing (CMP). CMP polishing showed superior results with an (0002) {omega} scan full width half maximum (FWHM) of 67 arcsec and an root mean square (RMS) roughness of 2 Aa. In comparison, commercial melt-grown substrates exhibited broader X-ray diffraction (XRD) linewidths with evidence of sub-surface crystal damage due to polishing, including a downward shift of c-lattice parameter. Secondary ion mass spectroscopy revealed strong Li, Fe, Co, Al and Si contamination in the hydrothermal crystals as opposed to the melt-grown substrates, for which glow discharge mass spectroscopy studies had reported high levels of Pb, Fe, Cd and Si. Low temperature photoluminescence (PL) studies indicated that the hydrothermal crystal had high defect and/or impurity concentrations compared with the melt-grown substrate. The dominant bound exciton for the melt-grown substrate was indexed to Al. ZnO films were grown using pulsed laser deposition. The melt-grown substrates gave superior results with XRD (0002) {omega} and 2{theta}/{omega} WHM of 124 and 34 arcsec, respectively. Atomic force microscope measurements indicated a low RMS roughness (1.9 nm) as confirmed by fringes in the XRD 2{theta}/{omega} scan. It was suggested that the improvement in XRD response relative to the substrate might be due to ''healing'' of sub-surface polishing damage due to the elevated T{sub s} used for the growth. Indeed the c-lattice parameter for the homoepitaxial layer on the melt-grown substrate had become that which would be expected for strain-free ZnO. Furthermore, the stability of the PL peak positions relative to bulk ZnO, confirmed that the films appear practically strain free. (orig.)

  9. Electronic properties of high-temperature superconducting thin films grown by pulsed laser deposition

    Science.gov (United States)

    Abrecht, M.; Ariosa, Daniel; Cloetta, D.; Margaritondo, Giorgio; Pavuna, Davor

    2002-11-01

    We use a pulsed laser deposition (PLD) setup to grow ultra-thin films of high temperature superconductors (HTSC) and transfer them in-situ into a photoemission chamber. Photoemission measurements on such films allow us to study non-cleavable materials, but can also give insights into aspects never measured before, like the influence of strain on the low energy electronic structure. Systematic studies of many different materials grown as films showed that Bi2Sr2CaCu2O8+x, Bi2Sr2Cu1O6+x, Bi2Sr2Ca2Cu3O10+x and La2-xSrxCuO4 films exhibit a conductor-like Fermi edge, but materials containing chains (such as YBa2Cu3O7-x) are prone to very rapid surface degradation, possibly related to critical oxygen loss at the surface. Among HTSC materials, La2-xSrxCuO4 is extremely interesting because of its rather simple structure and the fact that its critical temperature Tc can be enhanced by epitaxial strain. Here we present our first high resolution angular resolved photoemission spectroscopy (ARPES) results on 8 unit-cell thin La2-xSrxCuO4 films on SrLaAlO4 [001] substrates. Due to the lattice mismatch, such films are compressed in the copper oxygen planes and expanded in the c-axis direction. Results show a surprisingly modified Fermi surface compared to the one of non-strained samples.

  10. NanoSQUID magnetometry of individual cobalt nanoparticles grown by focused electron beam induced deposition

    Science.gov (United States)

    Martínez-Pérez, M. J.; Müller, B.; Schwebius, D.; Korinski, D.; Kleiner, R.; Sesé, J.; Koelle, D.

    2017-02-01

    We demonstrate the operation of low-noise nano superconducting quantum interference devices (SQUIDs) based on the high critical field and high critical temperature superconductor YBa2Cu3O7 (YBCO) as ultra-sensitive magnetometers for single magnetic nanoparticles (MNPs). The nanoSQUIDs exploit the Josephson behavior of YBCO grain boundaries and have been patterned by focused ion beam milling. This allows us to precisely define the lateral dimensions of the SQUIDs so as to achieve large magnetic coupling between the nanoloop and individual MNPs. By means of focused electron beam induced deposition, cobalt MNPs with a typical size of several tens of nm have been grown directly on the surface of the sensors with nanometric spatial resolution. Remarkably, the nanoSQUIDs are operative over extremely broad ranges of applied magnetic field (-1 T \\lt {μ }0H\\lt 1 T) and temperature (0.3 K \\lt T\\lt 80 K). All these features together have allowed us to perform magnetization measurements under different ambient conditions and to detect the magnetization reversal of individual Co MNPs with magnetic moments (1-30) × {10}6 {μ }{{B}}. Depending on the dimensions and shape of the particles we have distinguished between two different magnetic states yielding different reversal mechanisms. The magnetization reversal is thermally activated over an energy barrier, which has been quantified for the (quasi) single-domain particles. Our measurements serve to show not only the high sensitivity achievable with YBCO nanoSQUIDs, but also demonstrate that these sensors are exceptional magnetometers for the investigation of the properties of individual nanomagnets.

  11. Anomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation

    Directory of Open Access Journals (Sweden)

    Pranab Biswas

    2014-05-01

    Full Text Available The diffusion behavior of arsenic (As and gallium (Ga atoms from semi-insulating GaAs (SI-GaAs into ZnO films upon post-growth annealing vis-à-vis the resulting charge compensation was investigated with the help of x-ray photoelectron spectroscopy (XPS and secondary ion mass spectroscopy. The films, annealed at 600 ºC and 700 ºC showed p-type conductivity with a hole concentration of 1.1 × 1018 cm−3 and 2.8 × 1019 cm−3 respectively, whereas those annealed at 800 ºC showed n-type conductivity with a carrier concentration of 6.5 × 1016 cm−3. It is observed that at lower temperatures, large fraction of As atoms diffused from the SI-GaAs substrates into ZnO and formed acceptor related complex, (AsZn–2VZn, by substituting Zn atoms (AsZn and thereby creating two zinc vacancies (VZn. Thus as-grown ZnO which was supposed to be n-type due to nonstoichiometric nature showed p-type behavior. On further increasing the annealing temperature to 800 ºC, Ga atoms diffused more than As atoms and substitute Zn atoms thereby forming shallow donor complex, GaZn. Electrons from donor levels then compensate the p-type carriers and the material reverts back to n-type. Thus the conversion of carrier type took place due to charge compensation between the donors and acceptors in ZnO and this compensation is the possible origin of anomalous conduction in wide band gap materials.

  12. Hardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Berdova, Maria; Liu, Xuwen; Franssila, Sami, E-mail: sami.franssila@aalto.fi [Department of Materials Science and Engineering, Aalto University, 02150 Espoo (Finland); Wiemer, Claudia; Lamperti, Alessio; Tallarida, Grazia; Cianci, Elena [Laboratorio MDM, IMM CNR, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Fanciulli, Marco [Laboratorio MDM, IMM CNR, Via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy and Dipartimento di Scienza dei Materiali, Università degli studi di Milano Bicocca, 20126 Milano (Italy)

    2016-09-15

    The investigation of mechanical properties of atomic layer deposition HfO{sub 2} films is important for implementing these layers in microdevices. The mechanical properties of films change as a function of composition and structure, which accordingly vary with deposition temperature and post-annealing. This work describes elastic modulus, hardness, and wear resistance of as-grown and annealed HfO{sub 2}. From nanoindentation measurements, the elastic modulus and hardness remained relatively stable in the range of 163–165 GPa and 8.3–9.7 GPa as a function of deposition temperature. The annealing of HfO{sub 2} caused significant increase in hardness up to 14.4 GPa due to film crystallization and densification. The structural change also caused increase in the elastic modulus up to 197 GPa. Wear resistance did not change as a function of deposition temperature, but improved upon annealing.

  13. N-doped ZnO films grown from hybrid target by the pulsed laser deposition technique

    Science.gov (United States)

    Martín-Tovar, E. A.; Chan y Díaz, E.; Acosta, M.; Castro-Rodríguez, R.; Iribarren, A.

    2016-10-01

    ZnO thin films were grown by the pulsed laser deposition technique on glass substrate using a hybrid target composed of ZnO powder embedded into a poly(ethyl cyanoacrylate) matrix. The resulting thin film presented ZnO wurtzite structure with very low stress and diffractogram very similar to that of the powder pattern. From comparing with ZnO thin films grown from traditional sintered target, it is suggested that the use of this hybrid target with a soft matrix led to ejection of ZnO clusters that conveniently disposed and adhered to substrate and previous deposited layers. Chemical measurements showed the presence of Zn-N bonds, besides Zn-O ones. Optical absorption profile confirmed the presence of low-polymerized zinc oxynitride molecular subunits, besides ZnO.

  14. Structural and electrical characterization of Bi₂Se₃ nanostructures grown by metal-organic chemical vapor deposition.

    Science.gov (United States)

    Alegria, L D; Schroer, M D; Chatterjee, A; Poirier, G R; Pretko, M; Patel, S K; Petta, J R

    2012-09-12

    We characterize nanostructures of Bi(2)Se(3) that are grown via metal-organic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 μm long or thin micrometer-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mΩ·cm. We observe weak antilocalization and extract a phase coherence length l(ϕ) = 178 nm and spin-orbit length l(so) = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.

  15. Effects of Annealing Temperature on Properties of ZnO Thin Films Grown by Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    ZHUANG Hui-zhao; XUE Shou-bin; XUE Cheng-shan; HU Li-jun; LI Bao-li; ZHANG Shi-ying

    2007-01-01

    ZnO thin films are deposited on n-Si(111) substrates by pulsed laser deposition(PLD) system.Then the samples are annealed at different temperatures in air ambient and their properties are investigated particularly as a function of annealing temperature.The microstructure,morphology and optical properties of the as-grown ZnO films are studied by X-ray diffraction(XRD),atomic force microscope(AFM),Fourier transform infrared spectroscopy(FTIR) and photoluminescence(PL) spectra.The results show that the as-grown ZnO films have a hexagonal wurtzite structure with a preferred c-axis orientation.Moreover,the diameters of the ZnO crystallites become larger and the crystal quality of the ZnO films is improved with the increase of annealing temperature.

  16. Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition

    Science.gov (United States)

    Browne, David A.; Fireman, Micha N.; Mazumder, Baishakhi; Kuritzky, Leah Y.; Wu, Yuh-Renn; Speck, James S.

    2017-02-01

    The results of vertical transport through AlGaN heterobarriers are presented for ammonia molecular beam epitaxy (NH3-MBE) on c-plane GaN on sapphire templates and on m-plane bulk GaN substrates, as well as by metalorganic chemical vapor deposition (MOCVD) on m-plane bulk GaN substrates. Experiments were performed to determine the role of the AlGaN alloy as an effective barrier to vertical transport, which is an essential component of both optoelectronic and power electronic devices. The alloy composition, thickness, and doping levels of the AlGaN layers, as well as substrate orientation, were systematically varied to examine their influence on electron transport. Atom probe tomography (APT) was used to directly determine the alloy composition at the atomic scale to reveal the presence of random alloy fluctuations which provides insight into the nature of the observed transport.

  17. SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors

    OpenAIRE

    Boisselier, Guilhaume; Maury, Francis; Schuster, Frédéric

    2013-01-01

    International audience; SiC coatings have been grown by direct liquid injection of organosilanes in a hot-wall chemical vapor depositionreactor (DLICVD). 1,3-disilabutane (DSB) and polysilaethylene (PSE) were used as single-source precursors. Amorphous and stoichiometric SiC coatings were deposited under low pressure on various substrates in the temperature range of 923–1073 K. Thickness gradients due to the temperature profiles and the precursor depletion were observed along the reactor axis...

  18. The crystal morphology effect of Iridium tris-acetylacetonate on MOCVD iridium coatings

    Science.gov (United States)

    Shi, Jing; Hao, Yupeng; Yu, Xiaodong; Tan, Chengwen

    2017-07-01

    Iridium tris-acetylacetonate is the most commonly used precursor for the metal organic chemical vapour deposition (MOCVD) of iridium coating. In this paper, the crystal morphology effect of iridium tris-acetylacetonate on iridium coatings prepared by MOCVD was studied. Two kinds of Ir(acac)3 crystalline powder were prepared. A precursor sublimation experiment in a fixed bed reactor and an iridium deposition experiment in a cold-wall atmospheric CVD reactor were designed. It is found that the volatility of the hexagonal columnar crystals is better than that of the tetragonal flake crystals under the experimental conditions. It’s due to the hexagonal columnar crystals exposed more crystal faces than the tetragonal flake crystals, increasing its contact area with the transport gas. An adequate supply of iridium tris-acetylacetonate during the pre-deposition period contributed to obtain an iridium coating with a smooth and uniform continuity surface.

  19. RF plasma enhanced MOCVD of yttria stabilized zirconia thin films using octanedionate precursors and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Chopade, S.S. [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Nayak, C.; Bhattacharyya, D.; Jha, S.N.; Tokas, R.B.; Sahoo, N.K. [Atomic & Molecular Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Deo, M.N. [High Pressure & Synchrotron Radiation Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Biswas, A. [Atomic & Molecular Physics Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India); Rai, Sanjay [Indus Synchrotron Utilization Division, RRCAT, Indore 452013 (India); Thulasi Raman, K.H.; Rao, G.M. [Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012 (India); Kumar, Niranjan [Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Patil, D.S., E-mail: dspatil@iitb.ac.in [Laser and Plasma Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai 400085 (India)

    2015-11-15

    Highlights: • YSZ films are deposited by RF plasma MOCVD using Zr(tod){sub 4} and Y(tod){sub 3} precursors. • Films are deposited under the influence of RF self-bias on the substrates. • Films are characterized by different techniques. • Films properties are dependent on yttria content and film structure. - Abstract: Yttria stabilized zirconia thin films have been deposited by RF plasma enhanced MOCVD technique on silicon substrates at substrate temperature of 400 °C. Plasma of precursor vapors of (2,7,7-trimethyl-3,5-octanedionate) yttrium (known as Y(tod){sub 3}), (2,7,7-trimethyl-3,5-octanedionate) zirconium (known as Zr(tod){sub 4}), oxygen and argon gases is used for deposition. To the best of our knowledge, plasma assisted MOCVD of YSZ films using octanediaonate precursors have not been reported in the literature so far. The deposited films have been characterized by GIXRD, FTIR, XPS, FESEM, AFM, XANES, EXAFS, EDAX and spectroscopic ellipsometry. Thickness of the films has been measured by stylus profilometer while tribological property measurement has been done to study mechanical behavior of the coatings. Characterization by different techniques indicates that properties of the films are dependent on the yttria content as well as on the structure of the films.

  20. Electron postgrowth irradiation of platinum-containing nanostructures grown by electron-beam-induced deposition from Pt(PF3)4

    NARCIS (Netherlands)

    Botman, A.; Hagen, C.W.; Li, J.; Thiel, B.L.; Dunn, K.A.; Mulders, J.J.L.; Randolph, S.; Toth, M.

    2009-01-01

    The material grown in a scanning electron microscope by electron beam-induced deposition (EBID) using Pt(PF3)4 precursor is shown to be electron beam sensitive. The effects of deposition time and postgrowth electron irradiation on the microstructure and resistivity of the deposits were assessed by t

  1. Improved GaN Brown on Si(111 ) substrate using ammonia flow modulation on SiNx mask layer by MOCVD

    Institute of Scientific and Technical Information of China (English)

    YU NaiSen; WANG Yong; WANG Hui; NG KaiWei; LAU KeiMay

    2009-01-01

    In this paper, 1 μm n-GaN was grown by using varied and fixed ammonia flow (NH3) on SiNx mask layer on Si(111) substrate using metal organic chemical vapor deposition (MOCVD). In-situ optical reflectivity traces of GaN growth show that the three- to two-dimensional process has been prolonged by using varied ammonia flow on SiNx mask layer method compared with that grown by fixing ammonia flow. Structural and optical properties were characterized by high-resolution X-ray diffraction and photolu-minescence, and compared with the sample grown by fixing ammonia flow, GaN grown using the varied ammonia flow on SiNx mask layer showed better structure and optical quality. It was assumed that the low NH3 flow in the initial growth stage considerably increased the GaN island density on the nano-porous SiNx layer by enhancing vertical growth. Lateral growth was significantly favored by high NH3 flow in the subsequent step. As a result, the improved crystal and optical quality was achieved utilizing NH3 flow modulation for GaN buffer growth on Si(111) substrate.

  2. Diamond-like carbon and ceramic materials as protective coatings grown by pulsed laser deposition

    OpenAIRE

    Perera Mercado, Yibran Argenis

    2004-01-01

    A rather large number of nitride, carbide, and oxide thin films are used as hard and wear-resistant coatings, for optical, corrosive, and refractory applications that are of crucial importance. Additional requirements place even more stringent conditions on the deposition processes. The properties of coatings deposited by pulsed laser deposition are determined by the deposition parameters, the composition of the PLD plasma and its ionization states, the substrate conditions, etc.. In this way...

  3. Characterization of Al2O3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition

    Institute of Scientific and Technical Information of China (English)

    LU Hong-Liang; LI Yan-Bo; XU Min; DING Shi-Jin; SUN Liang; ZHANG Wei; WANG Li-Kang

    2006-01-01

    @@ Al2O3 thin films are grown by atomic layer deposition on GaAs substrates at 300℃. The structural properties of the Al2O3 thin film and the Al2O3/GaAs interface are characterized using x-ray diffraction (XRD), highresolution transmission electron microscopy (HRTEM), and x-ray photoelectron spectroscopy (XPS). The XRD results show that the as-deposited Al2O3 film is amorphous. For 30 atomic layer deposition growth cycles, the thicknesses of the Al2O3 thin film and the interface layer from the HRTEM are 3.3nm and 0.5nm, respectively.XPS analyses reveal that the Al2O3/GaAs interface is almost free from As2O3.

  4. Effect of Post-deposition Heat Treatment on the Physical Properties of SILAR Grown Tin Disulfide

    OpenAIRE

    2012-01-01

    Simple and versatile the successive ionic layer adsorption and reaction (SILAR) method was used to deposit tin disulfide (SnS2) thin films of about 0.29 mm thickness, under optimized deposition conditions [viz. SILAR cycles (60), immersion time (20 s), and rinsing time (10 s)]. Further post-deposition treatment using thermal annealing of the as-deposited thin film in oxygen ambience was done. Analytical investigations on the as-deposited and annealed films were carried out to study their stru...

  5. High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy

    Science.gov (United States)

    Kim, Jae-Hoon; Nouhi, Akbar; Radhakrishnan, Gouri; Liu, John K.; Lang, Robert J.

    1988-01-01

    A high-peak-power low-threshold AlGaAs/GaAs double-heterostructure stripe laser diode on Si substrats, grown by hybrid migration-enhanced molecular beam epitaxy (MEMBE) and metalorganic chemical vapor deposition (MOCVD) has been demonstrated for the first time. These devices showed the highest peak powers of up to 184 mW per facet reported so far for double-heterostructure stripe laser diodes on Si substrates, room-temperature pulsed threshold currents as low as 150 mA, and differential quantum efficiencies as high as 30 percent without mirror facet coating. An intrinsic threshold current density has been estimated to be about 2 kA/sq cm when taking current spreading and lateral diffusion effects into account. Low dislocation density shows that MEMBE can be a useful method to grow high-quality GaAs and AlGaAs/GaAs layers on Si substrates by combining with MOCVD.

  6. Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors

    Science.gov (United States)

    Kebłowski, A.; Gawron, W.; Martyniuk, P.; Stepień, D.; Kolwas, K.; Piotrowski, J.; Madejczyk, P.; Kopytko, M.; Piotrowski, A.; Rogalski, A.

    2016-05-01

    In this paper we present progress in MOCVD growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool in fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping and without post grown annealing. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for long wavelength infrared photoconductors operated in HOT conditions. The (100) HgCdTe photoconductor optimized for 13-μm attain detectivity equal to 6.5x109 Jones and therefore outperform its (111) counterpart. The paper also presents technological progress in fabrication of MOCVD-grown (111) HgCdTe barrier detectors. The barrier device performance is comparable with state-of-the-art of HgCdTe photodiodes. The detectivity of HgCdTe detectors is close to the value marked HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07".

  7. Growth mechanism of single-crystalline NiO thin films grown by metal organic chemical vapor deposition

    Science.gov (United States)

    Roffi, Teuku Muhammad; Nozaki, Shinji; Uchida, Kazuo

    2016-10-01

    Nickel oxide (NiO) thin films were grown by atmospheric-pressure metal organic chemical vapor deposition (APMOCVD). Growth was carried out using various growth parameters, including the growth temperature, the input precursor (O2/Ni) ratio, and the type of substrate material. Effects of the growth parameters on the structural and electrical properties of the films were investigated. X-ray diffraction analysis revealed that the crystal structure and quality were strongly affected by the growth temperature and the type of substrate material. At an optimized growth temperature, single-crystalline NiO films were grown on MgO(100) and MgO(111) substrates in a cube-on-cube orientation relationship, while on an Al2O3(001) substrate, the film was grown in the NiO[111] direction. The use of MgO substrates successfully suppressed the formation of twin defects, which have been frequently reported in the growth of NiO. The difference in the formation of the twin defects on MgO and Al2O3 substrates was discussed. It was observed that the resistivity dependence on crystal quality was affected by the choice of substrate material. The effects of the precursor ratio on the transmittance and resistivity of the films were also investigated. Improved transparency in the visible wavelength region and higher conductivity were found in films grown with higher O2/Ni ratios.

  8. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    OpenAIRE

    Brett B. Lewis; Stanford, Michael G.; Fowlkes, Jason D.; Kevin Lester; Harald Plank; Philip D. Rack

    2015-01-01

    Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled a...

  9. Ionization potentials of transparent conductive indium tin oxide films covered with a single layer of fluorine-doped tin oxide nanoparticles grown by spray pyrolysis deposition

    OpenAIRE

    2005-01-01

    Indium tin oxide (ITO) films deposited with single layers of monodispersive fluorine-doped tin oxide (FTO) nanoparticles of several nanometers in size were grown on glass substrates by intermittent spray pyrolysis deposition using conventional atomizers. These films have significantly higher ionization potentials than the bare ITO and FTO films grown using the same technique. The ITO films covered with FTO particles of 7 nm in average size show an ionization potential of 5.01 eV, as compared ...

  10. Effect of Annealing on the Optical Properties of GaN Films Grown by Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    M.Baseer Haider; M.F.Al-Kuhaili; S.M.A.Durrani; Imran Bakhtiari

    2013-01-01

    In the present study,gallium nitride thin films were grown by using pulsed laser deposition.After the growth samples were annealed at 400 and 600 ℃ in the nitrogen atmosphere.Surface morphology of the as-grown and annealed samples was observed by atomic force microscopy.Post-growth annealing results in an improved surface roughness of the films.Chemical analysis of the samples was performed by X-ray photoelectron spectroscopy.Stoichiometric gallium nitride thin films were obtained for the samples annealed at 600 ℃.Optical measurements of the samples were performed to measure the band gap and optical constants of the films.Effect of annealing on the band gap and optical constants of the films was studied.

  11. Enhancement of supercapacitance property of electrochemically deposited MnO2 thin films grown in acidic medium

    Science.gov (United States)

    Jana, S. K.; Rao, V. P.; Banerjee, S.

    2014-02-01

    In this communication we present supercapacitance property of MnO2 thin-films which are fabricated on stainless steel (SS) substrate by electro-deposition method carried out in different pH of the electrolyte. A significant improvement of the device performance of acid mediated grown (AMG) MnO2 over normal MnO2 (grown in neutral medium) has been achieved. We have also investigated role of interfacial structure on the internal resistance of the device material. AMG MnO2 film exhibits superior device performance with specific capacitance of 652 F/g which is 2 times better than that obtained in normal MnO2 and also energy density of 90.69 Wh/kg.

  12. Modeling the influence of incident angle and deposition rate on a nanostructure grown by oblique angle deposition

    Science.gov (United States)

    Li, Kun-Dar; Dong, Yu-Wei

    2017-02-01

    In this study, numerical approaches were applied to theoretically investigate the influence of process parameters, such as the incident angle and the deposition rate, on the nanostructural formation of thin films by oblique angle deposition (OAD). A continuum model was first developed, and the atomic diffusion, shadowing effect and steering effect were incorporated in the formation mechanisms of the surface morphology and nanostructure of the deposited films. A characteristic morphology of columnar nanorods corresponding to an OAD was well reproduced through this kinetic model. With the increase of the incident angle, the shadowing effect played a significant role in the columnar structures and the ratio of the surface area to volume was raised, implying a high level of voids in the nanostructures. When the deposition rate decreased, the porosity was notably suppressed due to the atomic diffusion in the growth process. These simulation results coincide well with many experimental observations. With the manipulation of the numerical simulations, the underlying mechanisms of the morphological formation during OAD were revealed, which also provided plentiful information to stimulate the process designs for manufacturing advanced materials.

  13. Controlling nucleation of monolayer WSe2 during metal-organic chemical vapor deposition growth

    Science.gov (United States)

    Eichfeld, Sarah M.; Oliveros Colon, Víctor; Nie, Yifan; Cho, Kyeongjae; Robinson, Joshua A.

    2016-06-01

    Tungsten diselenide (WSe2) is a semiconducting, two-dimensional (2D) material that has gained interest in the device community recently due to its electronic properties. The synthesis of atomically thin WSe2, however, is still in its infancy. In this work we elucidate the requirements for large selenium/tungsten precursor ratios and explain the effect of nucleation temperature on the synthesis of WSe2 via metal-organic chemical vapor deposition (MOCVD). The introduction of a nucleation-step prior to growth demonstrates that increasing nucleation temperature leads to a transition from a Volmer-Weber to Frank-van der Merwe growth mode. Additionally, the nucleation step prior to growth leads to an improvement of WSe2 layer coverage on the substrate. Finally, we note that the development of this two-step technique may allow for improved control and quality of 2D layers grown via CVD and MOCVD processes.

  14. MOCVD manifold switching effects on growth and characterization

    Science.gov (United States)

    Clark, Ivan O.; Fripp, Archibald L.; Jesser, William A.

    1991-01-01

    A combined modeling and experimental approach is used to quantify the effects of various manifold components on the switching speed in metalorganic chemical vapor deposition (MOCVD). In particular, two alternative vent-run high-speed switching manifold designs suitable for either continuous or interrupted growth have been investigated. Both designs are incorporated in a common manifold, instrumented with a mass spectrometer. The experiments have been performed using nitrogen as the transport gas and argon as the simulated source gas. The advantages and limitations of two designs are discussed. It is found that while constant flow manifold switching systems may have fluid dynamic advantages, care must be taken to minimize sections of the supply manifold with low flow rates if rapid changes in alloy composition are required.

  15. MOCVD ZnO/Screen Printed Ag Back Reflector for Flexible Thin Film Silicon Solar Cell Application

    Directory of Open Access Journals (Sweden)

    Amornrat Limmanee

    2014-01-01

    Full Text Available We have prepared Ag back electrode by screen printing technique and developed MOCVD ZnO/screen printed Ag back reflector for flexible thin film silicon solar cell application. A discontinuity and poor contact interface between the MOCVD ZnO and screen printed Ag layers caused poor open circuit voltage (Voc and low fill factor (FF; however, an insertion of a thin sputtered ZnO layer at the interface could solve this problem. The n type hydrogenated amorphous silicon (a-Si:H film is preferable for the deposition on the surface of MOCVD ZnO film rather than the microcrystalline film due to its less sensitivity to textured surface, and this allowed an improvement in the FF. The n-i-p flexible amorphous silicon solar cell using the MOCVD ZnO/screen printed Ag back reflector showed an initial efficiency of 6.2% with Voc=0.86 V, Jsc=12.4 mA/cm2, and FF = 0.58 (1 cm2. The identical quantum efficiency and comparable performance to the cells using conventional sputtered Ag back electrode have verified the potential of the MOCVD ZnO/screen printed Ag back reflector and possible opportunity to use the screen printed Ag thick film for flexible thin film silicon solar cells.

  16. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    Energy Technology Data Exchange (ETDEWEB)

    Bulusu, A.; Singh, A.; Kim, H. [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kippelen, B. [School of Electrical and Computer Engineering, Georgia Institute of Technology, and Center for Organic Photonics and Electronics, Atlanta, Georgia 30332 (United States); Cullen, D. [Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States); Graham, S., E-mail: sgraham@gatech.edu [Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Oak Ridge National Laboratory, P.O. Box 2008 MS-6064, Oak Ridge, Tennessee 37831 (United States)

    2015-08-28

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al{sub 2}O{sub 3})/hafnium oxide (HfO{sub 2}) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiN{sub x} layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

  17. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics

    Science.gov (United States)

    Bulusu, A.; Singh, A.; Wang, C. Y.; Dindar, A.; Fuentes-Hernandez, C.; Kim, H.; Cullen, D.; Kippelen, B.; Graham, S.

    2015-08-01

    Direct deposition of barrier films by atomic layer deposition (ALD) onto printed electronics presents a promising method for packaging devices. Films made by ALD have been shown to possess desired ultrabarrier properties, but face challenges when directly grown onto surfaces with varying composition and topography. Challenges include differing nucleation and growth rates across the surface, stress concentrations from topography and coefficient of thermal expansion mismatch, elastic constant mismatch, and particle contamination that may impact the performance of the ALD barrier. In such cases, a polymer smoothing layer may be needed to coat the surface prior to ALD barrier film deposition. We present the impact of architecture on the performance of aluminum oxide (Al2O3)/hafnium oxide (HfO2) ALD nanolaminate barrier films deposited on fluorinated polymer layer using an optical calcium (Ca) test under damp heat. It is found that with increasing polymer thickness, the barrier films with residual tensile stress are prone to cracking resulting in rapid failure of the Ca sensor at 50 °C/85% relative humidity. Inserting a SiNx layer with residual compressive stress between the polymer and ALD layers is found to prevent cracking over a range of polymer thicknesses with more than 95% of the Ca sensor remaining after 500 h of testing. These results suggest that controlling mechanical properties and film architecture play an important role in the performance of direct deposited ALD barriers.

  18. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    Directory of Open Access Journals (Sweden)

    Brett B. Lewis

    2015-04-01

    Full Text Available Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IVMe3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention.

  19. Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

    Science.gov (United States)

    Lewis, Brett B; Stanford, Michael G; Fowlkes, Jason D; Lester, Kevin; Plank, Harald

    2015-01-01

    Summary Platinum–carbon nanostructures deposited via electron beam induced deposition from MeCpPt(IV)Me3 are purified during a post-deposition electron exposure treatment in a localized oxygen ambient at room temperature. Time-dependent studies demonstrate that the process occurs from the top–down. Electron beam energy and current studies demonstrate that the process is controlled by a confluence of the electron energy loss and oxygen concentration. Furthermore, the experimental results are modeled as a 2nd order reaction which is dependent on both the electron energy loss density and the oxygen concentration. In addition to purification, the post-deposition electron stimulated oxygen purification process enhances the resolution of the EBID process due to the isotropic carbon removal from the as-deposited materials which produces high-fidelity shape retention. PMID:25977862

  20. Effect of acetylene flow rate on morphology and structure of carbon nanotube thick films grown by thermal chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    CAO Zhangyi; SUN Zhuo; GUO Pingsheng; CHEN Yiwei

    2007-01-01

    Carbon nanotube (CNT) films were grown on nickel foil substrates by thermal chemical vapor deposition (CVD) with acetylene and hydrogen as the precursors. The morphology and structure of CNTs depending on the acetylene flow rate were characterized by a scanning electron microscope (SEM),a transmission electron microscope (TEM) and a Raman spectrometer,respectively.The effect of acetylene flow rate on the morphology and structure of CNT films was investigated.By increasing the acetylene flow rate from 10 to 90 sccm (standard cubic centimeter perminute),the yield and the diameter of CNTs increase.Also, the defects and amorphous phase in CNT films increase with increasing acetylene flow rate.

  1. Deposition and characterization of diamond-like nanocomposite coatings grown by plasma enhanced chemical vapour deposition over different substrate materials

    Indian Academy of Sciences (India)

    Awadesh Kr Mallik; Nanadadulal Dandapat; Prajit Ghosh; Utpal Ganguly; Sukhendu Jana; Sayan Das; Kaustav Guha; Garfield Rebello; Samir Kumar Lahiri; Someswar Datta

    2013-04-01

    Diamond-like nanocomposite (DLN) coatings have been deposited over different substrates used for biomedical applications by plasma-enhanced chemical vapour deposition (PECVD). DLN has an interconnecting network of amorphous hydrogenated carbon and quartz-like oxygenated silicon. Raman spectroscopy, Fourier transform–infra red (FT–IR) spectroscopy, transmission electron microscopy (TEM) and X-ray diffraction (XRD) have been used for structural characterization. Typical DLN growth rate is about 1 m/h, measured by stylus profilometer. Due to the presence of quartz-like Si:O in the structure, it is found to have very good adhesive property with all the substrates. The adhesion strength found to be as high as 0.6 N on SS 316 L steel substrates by scratch testing method. The Young’s modulus and hardness have found to be 132 GPa and 14.4 GPa, respectively. DLN coatings have wear factor in the order of 1 × 10-7 mm3/N-m. This coating has found to be compatible with all important biomedical substrate materials and has successfully been deposited over Co–Cr alloy based knee implant of complex shape.

  2. Highly conductive and pure gold nanostructures grown by electron beam induced deposition

    Science.gov (United States)

    Shawrav, Mostafa M.; Taus, Philipp; Wanzenboeck, Heinz D.; Schinnerl, M.; Stöger-Pollach, M.; Schwarz, S.; Steiger-Thirsfeld, A.; Bertagnolli, Emmerich

    2016-09-01

    This work introduces an additive direct-write nanofabrication technique for producing extremely conductive gold nanostructures from a commercial metalorganic precursor. Gold content of 91 atomic % (at. %) was achieved by using water as an oxidative enhancer during direct-write deposition. A model was developed based on the deposition rate and the chemical composition, and it explains the surface processes that lead to the increases in gold purity and deposition yield. Co-injection of an oxidative enhancer enabled Focused Electron Beam Induced Deposition (FEBID)—a maskless, resistless deposition method for three dimensional (3D) nanostructures—to directly yield pure gold in a single process step, without post-deposition purification. Gold nanowires displayed resistivity down to 8.8 μΩ cm. This is the highest conductivity achieved so far from FEBID and it opens the possibility of applications in nanoelectronics, such as direct-write contacts to nanomaterials. The increased gold deposition yield and the ultralow carbon level will facilitate future applications such as the fabrication of 3D nanostructures in nanoplasmonics and biomolecule immobilization.

  3. Nanobrick wall multilayer thin films grown faster and stronger using electrophoretic deposition

    Science.gov (United States)

    Cho, Chungyeon; Wallace, Kevin L.; Hagen, David A.; Stevens, Bart; Regev, Oren; Grunlan, Jaime C.

    2015-05-01

    In an effort to speed up the layer-by-layer (LbL) deposition technique, electrophoretic deposition (EPD) is employed with weak polyelectrolytes and clay nanoplatelets. The introduction of an electric field results in nearly an order of magnitude increase in thickness relative to conventional LbL deposition for a given number of deposited layers. A higher clay concentration also results with the EPD-LbL process, which produces higher modulus and strength with fewer deposited layers. A 20 quadlayer (QL) assembly of linear polyethyleneimine (LPEI)/poly(acrylic acid)/LPEI/clay has an elastic modulus of 45 GPa, tensile strength of 70 MPa, and thickness of 4.4 μm. Traditional LbL requires 40 QL to achieve the same thickness, with lower modulus and strength. This study reveals how these films grow and maintain a highly ordered nanobrick wall structure that is commonly associated with LbL deposition. Fewer layers required to achieve improved properties will open up many new opportunities for this multifunctional thin film deposition technique.

  4. Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

    Directory of Open Access Journals (Sweden)

    Ya-Ju Lee

    2014-05-01

    Full Text Available High-efficient ZnO-based nanorod array light-emitting diodes (LEDs were grown by an oblique-angle deposition scheme. Due to the shadowing effect, the inclined ZnO vapor-flow was selectively deposited on the tip surfaces of pre-fabricated p-GaN nanorod arrays, resulting in the formation of nanosized heterojunctions. The LED architecture composed of the slanted n-ZnO film on p-GaN nanorod arrays exhibits a well-behaving current rectification of junction diode with low turn-on voltage of 4.7 V, and stably emits bluish-white luminescence with dominant peak of 390 nm under the operation of forward injection currents. In general, as the device fabrication does not involve passivation of using a polymer or sophisticated material growth techniques, the revealed scheme might be readily applied on other kinds of nanoscale optoelectronic devices.

  5. Properties of MgB{sub 2} films grown at various temperatures by hybrid physical-chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Ke; Veldhorst, Menno; Li, Qi; Xi, X X [Department of Physics, Pennsylvania State University, University Park, PA 16802 (United States); Lee, Che-Hui; Lamborn, Daniel R; DeFrain, Raymond; Redwing, Joan M [Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802 (United States)

    2008-09-15

    A hybrid physical-chemical vapour deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB{sub 2} thin films and thick films at various temperatures. We are able to grow superconducting MgB{sub 2} thin films at temperatures as low as 350 deg. C with a T{sub c0} of 35.5 K. MgB{sub 2} films up to 4 {mu}m in thickness grown at 550 deg. C have J{sub c} over 10{sup 6} A cm{sup -2} at 5 K and zero applied field. The low deposition temperature of MgB{sub 2} films is desirable for all-MgB{sub 2} tunnel junctions and MgB{sub 2} thick films are important for applications in coated conductors.

  6. Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

    Science.gov (United States)

    Lee, Ya-Ju; Yang, Zu-Po; Lo, Fang-Yuh; Siao, Jhih-Jhong; Xie, Zhong-Han; Chuang, Yi-Lun; Lin, Tai-Yuan; Sheu, Jinn-Kong

    2014-05-01

    High-efficient ZnO-based nanorod array light-emitting diodes (LEDs) were grown by an oblique-angle deposition scheme. Due to the shadowing effect, the inclined ZnO vapor-flow was selectively deposited on the tip surfaces of pre-fabricated p-GaN nanorod arrays, resulting in the formation of nanosized heterojunctions. The LED architecture composed of the slanted n-ZnO film on p-GaN nanorod arrays exhibits a well-behaving current rectification of junction diode with low turn-on voltage of 4.7 V, and stably emits bluish-white luminescence with dominant peak of 390 nm under the operation of forward injection currents. In general, as the device fabrication does not involve passivation of using a polymer or sophisticated material growth techniques, the revealed scheme might be readily applied on other kinds of nanoscale optoelectronic devices.

  7. Self-organized single crystal mixed magnetite/cobalt ferrite films grown by infrared pulsed-laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Figuera, Juan de la, E-mail: juan.delafiguera@iqfr.csic.es [Instituto de Química Física “Rocasolano”, CSIC, Madrid E-28006 (Spain); Quesada, Adrián [Instituto de Cerámica y Vidrio, CSIC, Madrid E-28049 (Spain); Martín-García, Laura; Sanz, Mikel; Oujja, Mohamed; Rebollar, Esther; Castillejo, Marta [Instituto de Química Física “Rocasolano”, CSIC, Madrid E-28006 (Spain); Prieto, Pilar; Muñoz-Martín, Ángel [Universidad Autónoma de Madrid, E-28049 (Spain); Aballe, Lucía [Alba Synchrotron Light Facility, CELLS, Barcelona (Spain); Marco, José F. [Instituto de Química Física “Rocasolano”, CSIC, Madrid E-28006 (Spain)

    2015-12-30

    Highlights: • Infrared pulsed deposition is used to grow single crystal mixed magnetite-cobalt ferrite films. • Distinct topography with two mound types on the surface of the film. • Suggested origin of segregation into two phases is oxygen deficiency during growth. • Mössbauer is required to quantify the two components. - Abstract: We have grown mixed magnetite/cobalt ferrite epitaxial films on SrTiO{sub 3} by infrared pulsed-laser deposition. Diffraction experiments indicate epitaxial growth with a relaxed lattice spacing. The films are flat with two distinct island types: nanometric rectangular mounds in two perpendicular orientations, and larger square islands, attributed to the two main components of the film as determined by Mössbauer spectroscopy. The origin of the segregation is suggested to be the oxygen-deficiency during growth.

  8. LiCoO{sub 2} thin films grown by pulsed laser deposition on low cost substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ginley, D.S.; Perkins, J.D.; McGraw, J.M.; Parilla, P.A.

    1998-07-01

    The authors report on the use of pulsed laser deposition (PLD) to grow thin films of LiCoO{sub 2} on a number of low cost substrates including SnO{sub 2} coated Upilex, stainless steel and SnO{sub 2} coated glass. Highly textured (001) films grown on CVD deposited SnO{sub 2} films on 7059 glass, were obtained at 200 to 500 mTorr O{sub 2} and a temperature of 500 C. Similar texture was not obtained on the stainless or Upilex however dense films from crystalline to amorphous were obtained. The films were characterized by x-ray diffraction and Raman spectroscopy.

  9. Effects of nitrogen on the growth and optical properties of ZnO thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cui, J B; Thomas, M A; Soo, Y C; Kandel, H; Chen, T P [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States)

    2009-08-07

    ZnO thin films were grown using pulsed laser deposition by ablating a Zn target in various mixtures of O{sub 2} and N{sub 2}. The presence of N{sub 2} during deposition was found to affect the growth of the ZnO thin films and their optical properties. Small N{sub 2} concentrations during growth led to strong acceptor-related photoluminescence (PL), while larger concentrations affected both the intensity and temperature dependence of the emission peaks. In addition, the PL properties of the annealed ZnO thin films are associated with the N{sub 2} concentration during their growth. The possible role of nitrogen in ZnO growth and annealing is discussed.

  10. Surface electronic and structural properties of nanostructured titanium oxide grown by pulsed laser deposition

    NARCIS (Netherlands)

    Fusi, M.; Maccallini, E.; Caruso, T.; Casari, C. S.; Bassi, A. Li; Bottani, C. E.; Rudolf, P.; Prince, K. C.; Agostino, R. G.

    2011-01-01

    Titanium oxide nanostructured thin films synthesized by pulsed laser deposition (PLD) were here characterized with a multi-technique approach to investigate the relation between surface electronic, structural and morphological properties. Depending on the growth parameters, these films present chara

  11. Thermodynamic investigation of the MOCVD of copper films from bis(2,2,6,6-tetramethyl-3,5-heptadionato)copper(II)

    Indian Academy of Sciences (India)

    Sukanya Mukhopadhyay; K Shalini; Anjana Devi; S A Shivashankar

    2002-10-01

    Equilibrium concentrations of various condensed and gaseous phases have been thermodynamically calculated, using the free energy minimization criterion, for the metalorganic chemical vapour deposition (MOCVD) of copper films using bis(2,2,6,6-tetramethyl-3,5-heptadionato)copper(II) as the precursor material. From among the many chemical species that may possibly result from the CVD process, only those expected on the basis of mass spectrometric analysis and chemical reasoning to be present at equilibrium, under different CVD conditions, are used in the thermodynamic calculations. The study predicts the deposition of pure, carbon-free copper in the inert atmosphere of argon as well as in the reactive hydrogen atmosphere, over a wide range of substrate temperatures and total reactor pressures. Thin films of copper, grown on SiO2/Si(100) substrates from this metalorganic precursor by low pressure CVD have been characterized by XRD and AES. The experimentally determined composition of CVD-grown copper films is in reasonable agreement with that predicted by thermodynamic analysis.

  12. Fe:O:C grown by focused-electron-beam-induced deposition: magnetic and electric properties

    Energy Technology Data Exchange (ETDEWEB)

    Lavrijsen, R; Schoenaker, F J; Ellis, T H; Barcones, B; Kohlhepp, J T; Swagten, H J M; Koopmans, B [Department of Applied Physics, Center for NanoMaterials and COBRA Research Institute, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven (Netherlands); Cordoba, R; Ibarra, M R [Instituto de Nanociencia de Aragon, Universidad de Zaragoza, E-50009 Zaragoza (Spain); De Teresa, J M; Magen, C [Departamento de Fisica de la Materia Condensada, Universidad de Zaragoza, E-50009 Zaragoza (Spain); Trompenaars, P; Mulders, J J L, E-mail: r.lavrijsen@tue.nl, E-mail: deteresa@unizar.es [FEI Electron Optics, Achtseweg Noord 5, 5651 GG Eindhoven (Netherlands)

    2011-01-14

    We systematically study the effect of oxygen content on the magneto-transport and microstructure of Fe:O:C nanowires deposited by focused-electron-beam-induced (FEBID) deposition. The Fe/O ratio can be varied with an Fe content varying between {approx} 50 and 80 at.% with overall low C content ({approx}16 {+-} 3 at.%) by adding H{sub 2}O during the deposition while keeping the beam parameters constant as measured by energy dispersive x-ray (EDX) spectroscopy. The room-temperature magnetic properties for deposits with an Fe content of 66-71 at.% are investigated using the magneto-optical Kerr effect (MOKE) and electric magneto-transport measurements. The nanostructure of the deposits is investigated through cross-sectional high-resolution transmission electron microscopy (HRTEM) imaging, allowing us to link the observed magneto-resistance and resistivity to the transport mechanism in the deposits. These results demonstrate that functional magnetic nanostructures can be created, paving the way for new magnetic or even spintronics devices.

  13. The effects of thermal annealing on the structure and the electrical transport properties of ultrathin gadolinia-doped ceria films grown by pulsed laser deposition

    DEFF Research Database (Denmark)

    Rodrigo, Katarzyna Agnieszka; Heiroth, S.; Pryds, Nini;

    2011-01-01

    Ultrathin crystalline films of 10 mol% gadolinia-doped ceria (CGO10) are grown on MgO (100) substrates by pulsed laser deposition at a moderate temperature of 400°C. As-deposited CGO10 layers of approximately 4 nm, 14 nm, and 22 nm thickness consist of fine grains with dimensions ≤∼11 nm. The films...

  14. Dependence of InN properties on MOCVD growth parameters

    Energy Technology Data Exchange (ETDEWEB)

    Tuna, Oe.; Giesen, C. [AIXTRON AG, Kaiserstr. 98, 52134 Herzogenrath (Germany); Behmenburg, H.; Kalisch, H.; Jansen, R.H. [Chair of Electromagnetic Theory, RWTH Aachen University, Kackertstr. 15-17, 52072 Aachen (Germany); Yablonskii, G.P. [Stepanov Institute of Physics, National Academy of Sciences of Belarus, Independence Ave. 68, Minsk 220072 (Belarus); Heuken, M. [AIXTRON AG, Kaiserstr. 98, 52134 Herzogenrath (Germany); Chair of Electromagnetic Theory, RWTH Aachen University, Kackertstr. 15-17, 52072 Aachen (Germany)

    2011-07-15

    In order to optimize the growth conditions, the effect of the most important growth parameters such as growth temperature, pressure and V/III ratio on MOCVD-grown InN was investigated. A series of samples were grown by changing the growth temperature from 500 C to 550 C at fixed growth pressure of 800 mbar and V/III ratio of 145000. An improvement of electrical properties with temperature increment was noted. The highest mobility of 1200 cm{sup 2}/Vs was achieved at 550 C with a bulk carrier concentration of 4.32 x 10{sup 18} cm{sup -3}. The effect of V/III ratio on In droplet formation and on carrier concentration was also studied. At fixed temperature of 520 C, reactor pressure of 200 mbar and at fixed NH{sub 3} flow of 3 slm, a rising TMIn flow from 1.2 {mu}mol/min to 2.0 {mu}mol/min results in a carrier concentration increment from 6.06 x 10{sup 18} cm{sup -3} to 1.33 x 10{sup 19} cm{sup -3}and a decrement of the mobility from 430 cm{sup 2}/Vs to 348 cm{sup 2}/Vs. X-ray diffraction measurements show that the intensity associated with In droplets on the surface is rising with increasing TMIn flow. The effect of reactor pressure on InN growth was also examined. A high sensitivity to growth pressure for crystalline quality of InN was observed. The full width at half maximum (FWHM) values of InN (0002) reflexes decreased with increasing reactor pressure. With increasing growth pressure above 200 mbar, FWHM of around 275 arcsec of InN (0002) was achieved. This FWHM value is the lowest reported in literature for MOCVD-grown InN so far. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. Characteristics of Fluorine-doped tin oxide thin films grown by Streaming process for Electrodeless Electrochemical Deposition

    Science.gov (United States)

    Yusuf, Gbadebo; Khalilzadeh-Rezaie, Farnood; Cleary, Justin W.; Oladeji, Isaiah O.; Suu, Koukou; Schoenfeld, Winston V.; Peale, Robert E.; Awodugba, Ayodeji O.

    2015-04-01

    This work investigated the characteristics of SnO2: F films grown by Streaming Process for Electrodeless Electrochemical Deposition (SPEED). Stannic chloride (SnCl4) and ammonium fluoride (NH4 F) was dissolved in a mixture of deionized water and organic solvents. The preheated substrate temperature was varied between 450 and 530° C. High quality SnO2: F films were grown at all the substrate temperatures studied. The typical film thickness was 250 nm. XRD shows that the grown films are polycrystalline SnO2 with a tetragonal crystal structure. The average optical transmission of the films was around 93% throughout the wavelength of 400 to 1000 nm. The lowest electrical resistivity achieved was 6 x 10-4 Ω cm. The Hall measurements showed that the film is an n-type semiconductor, with the highest carrier mobility of 8.3 cm2/V.s, and concentration of 1 x 1021 cm-3. The direct band gap was determined to be 4 eV from the transmittance spectrum.

  16. Field-Emission Study of Multi-Walled Carbon Nanotubes Grown On Si Substrate by Low Pressure Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    J. Ali

    2011-01-01

    Full Text Available CNTs are synthesized by Low Pressure Chemical Vapor Deposition (LPCVD method at 600 °C. The Si substrate is coated with Fe, used as a catalyst, by RF- sputtering. The thickness of the catalyst film is measured to be approximately 15 nm. Three precursor gases Acetylene (C2H2, Ammonia (NH3 and Hydrogen (H2 with flow rates 15 sccm, 100 sccm and 100 sccm respectively are allowed to flow through the tube reactor for 20 minutes. The as grown CNTs sample was characterized by Scanning Electron Microscope (SEM. SEM images show that the diameter of as grown CNTs is in the range of 20-50 nm. Field emission properties of as grown sample have also been studied. The CNTs film shows good field emission with turn on field Eα = 2.10 V/μm at the current density of 4.59 mA/cm2 with enhancement factor β = 1.37 × 102.

  17. Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1’-methyl-ruthenocene

    Science.gov (United States)

    Kukli, Kaupo; Aarik, Jaan; Aidla, Aleks; Uustare, Teet; Jõgi, Indrek; Lu, Jun; Tallarida, Massimo; Kemell, Marianna; Kiisler, Alma-Asta; Ritala, Mikko; Leskelä, Markku

    2010-06-01

    Ru thin films were grown on TiO 2, Al 2O 3, HfO 2, and ZrO 2 films as well as on HF-etched silicon and SiO 2-covered silicon by atomic layer deposition from 1-ethyl-1'-methyl-ruthenocene, (CH 3C 5H 4)(C 2H 5C 5H 4)Ru, and oxygen. The growth of Ru was obtained and characterized at temperatures ranging from 250 to 325 °C. On epitaxial rutile, highly oriented growth of Ru with hexagonal structure was achieved, while on other substrates the films possessed nonoriented hexagonal structure. Ruthenium oxide was not detected in the films. The lowest resistivity value obtained for 5.0-6.6 nm thick films was 26 μΩ cm. The conductivity of the films depended somewhat on the deposition cycle time parameters and, expectedly, more strongly on the amount of deposition cycles. Increase in the deposition temperature of underlying metal oxide films increased the conductivity of Ru layers.

  18. Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    CHEN Yao; JIANG Yang; XU Pei-Qiang; MA Zi-Guang; WANG Xiao-Li; WANG Lu; JIA Hai-Qiang; CHEN Hong

    2011-01-01

    The strain in GaN epitaxial layers grown on 6H-SiC substrates with an AIN buffer by metalorganic chemical wpor deposition is investigated.It is found that the insertion of a graded AlGaN layer between the GaN layer and the AIN buffer can change the signs of strain.A compressive strain in an overgrown thick (2 μm) GaN layer is obtained.High-resolution x-ray diffraction, Raman spectroscopy and photoluminescence measurements are used to determine the strain state in the GaN layers.The mechanism of stress control by inserting graded AlGaN in subsequent GaN layers is discussed briefly.%@@ The strain in GaN epitaxial layers grown on 611-SiC substrates with an AIN buffer by metalorganic chemical vapor deposition is investigated.It is found that the insertion of a graded AlGaN layer between the GaN layer and the AIN buffer can change the signs of strain.A compressive strain in an overgrown thick(2μm)GaN layer is obtained.High-resolution x-ray diffraction, Raman spectroscopy and photoluminescence measurements are used to determine the strain state in the GaN layers.The mechanism of stress control by inserting graded AlGaN in subsequent GaN layers is discussed briefly.

  19. Ag films grown by remote plasma enhanced atomic layer deposition on different substrates

    Energy Technology Data Exchange (ETDEWEB)

    Amusan, Akinwumi A., E-mail: akinwumi.amusan@ovgu.de; Kalkofen, Bodo; Burte, Edmund P. [Institute of Micro and Sensor Systems, Otto-von-Guericke University, Universitätsplatz 2, 39106 Magdeburg (Germany); Gargouri, Hassan; Wandel, Klaus; Pinnow, Cay [SENTECH Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany); Lisker, Marco [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

    2016-01-15

    Silver (Ag) layers were deposited by remote plasma enhanced atomic layer deposition (PALD) using Ag(fod)(PEt{sub 3}) (fod = 2,2-dimethyl-6,6,7,7,8,8,8-heptafluorooctane-3,5-dionato) as precursor and hydrogen plasma on silicon substrate covered with thin films of SiO{sub 2}, TiN, Ti/TiN, Co, Ni, and W at different deposition temperatures from 70  to 200 °C. The deposited silver films were analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy, four point probe measurement, ellipsometric measurement, x-ray fluorescence (XRF), and x-ray diffraction (XRD). XPS revealed pure Ag with carbon and oxygen contamination close to the detection limit after 30 s argon sputtering for depositions made at 120 and 200 °C substrate temperatures. However, an oxygen contamination was detected in the Ag film deposited at 70 °C after 12 s argon sputtering. A resistivity of 5.7 × 10{sup −6} Ω cm was obtained for approximately 97 nm Ag film on SiO{sub 2}/Si substrate. The thickness was determined from the SEM cross section on the SiO{sub 2}/Si substrate and also compared with XRF measurements. Polycrystalline cubic Ag reflections were identified from XRD for PALD Ag films deposited at 120 and 200 °C. Compared to W surface, where poor adhesion of the films was found, Co, Ni, TiN, Ti/TiN and SiO{sub 2} surfaces had better adhesion for silver films as revealed by SEM, TEM, and AFM images.

  20. Effect of Post-deposition Heat Treatment on the Physical Properties of SILAR Grown Tin Disulfide

    Directory of Open Access Journals (Sweden)

    Nishad Gopal Deshpande

    2012-04-01

    Full Text Available Simple and versatile the successive ionic layer adsorption and reaction (SILAR method was used to deposit tin disulfide (SnS2 thin films of about 0.29 mm thickness, under optimized deposition conditions [viz. SILAR cycles (60, immersion time (20 s, and rinsing time (10 s]. Further post-deposition treatment using thermal annealing of the as-deposited thin film in oxygen ambience was done. Analytical investigations on the as-deposited and annealed films were carried out to study their structural, optical and electrical properties. Structural phase transformation from hexagonal to tetragonal was observed after thermal annealing of the film. Compositional analysis showed that the SnS2 film becomes sulphur deficient and oxygen richer, while the band gap increases from 2.22 eV to 3.13 eV after thermal treatment. Additionally, decrease in photoluminescence properties, increase in resistance and a deviation from diode-like behavior was also seen and reported.

  1. Atomic force microscopic characterization of films grown by inverse pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Egerhazi, L. [Department of Optics and Quantum Electronics, University of Szeged, P.O. Box 406, H-6701 Szeged (Hungary); Geretovszky, Zs. [Department of Optics and Quantum Electronics, University of Szeged, P.O. Box 406, H-6701 Szeged (Hungary); Csako, T. [Department of Optics and Quantum Electronics, University of Szeged, P.O. Box 406, H-6701 Szeged (Hungary); Szoerenyi, T. [Research Group on Laser Physics of the Hungarian Academy of Sciences, University of Szeged, P.O. Box 406, H-6701 Szeged (Hungary)]. E-mail: t.szorenyi@physx.u-szeged.hu

    2006-04-30

    Carbon nitride films have been deposited by KrF excimer laser ablation of a rotating graphite target in 5 Pa nitrogen ambient in an inverse pulsed laser deposition configuration, where the backward motion of the ablated species is utilised for film growth on substrates lying in the target plane. Topometric AFM scans of the films, exhibiting elliptical thickness distribution, have been recorded along the axes of symmetry of the deposition area. High resolution AFM scans revealed the existence of disk-like, or somewhat elongated rice-like features of 5-10 nm average thickness and {approx}100 nm largest dimension, densely packed over the whole, approximately 14 x 10 cm{sup 2} deposition area. The RMS roughness of the film decreased from 9 nm near to the laser spot down to 2 nm in the outer regions. Even the highest RMS value obtained for IPLD films was less than half of the typical, 25 nm roughness measured on simultaneously deposited PLD films.

  2. Electrochemical impedance spectroscopy on nanostructured carbon electrodes grown by supersonic cluster beam deposition

    Energy Technology Data Exchange (ETDEWEB)

    Bettini, Luca Giacomo; Bardizza, Giorgio; Podesta, Alessandro; Milani, Paolo; Piseri, Paolo, E-mail: piseri@mi.infn.it [Universita degli Studi di Milano, Dipartimento di Fisica and CIMaINa (Italy)

    2013-02-15

    Nanostructured porous films of carbon with density of about 0.5 g/cm{sup 3} and 200 nm thickness were deposited at room temperature by supersonic cluster beam deposition (SCBD) from carbon clusters formed in the gas phase. Carbon film surface topography, determined by atomic force microscopy, reveals a surface roughness of 16 nm and a granular morphology arising from the low kinetic energy ballistic deposition regime. The material is characterized by a highly disordered carbon structure with predominant sp2 hybridization as evidenced by Raman spectroscopy. The interface properties of nanostructured carbon electrodes were investigated by cyclic voltammetry and electrochemical impedance spectroscopy employing KOH 1 M solution as aqueous electrolyte. An increase of the double layer capacitance is observed when the electrodes are heat treated in air or when a nanostructured nickel layer deposited by SCBD on top of a sputter deposited film of the same metal is employed as a current collector instead of a plain metallic film. This enhancement is consistent with an improved charge injection in the active material and is ascribed to the modification of the electrical contact at the interface between the carbon and the metal current collector. Specific capacitance values up to 120 F/g have been measured for the electrodes with nanostructured metal/carbon interface.

  3. Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition

    Science.gov (United States)

    Wang, Haiyan; Wang, Wenliang; Yang, Weijia; Zhu, Yunnong; Lin, Zhiting; Li, Guoqiang

    2016-04-01

    The stress-free GaN epitaxial films have been directly grown by pulsed laser deposition (PLD) at 850 °C, and the effect of different stress on the microstructure of as-grown GaN epitaxial films has been explored in detail. The as-grown stress-free GaN epitaxial films exhibit very smooth surface without any particles and grains, which is confirmed by the smallest surface root-mean-square roughness of 2.3 nm measured by atomic force microscopy. In addition, they also have relatively high crystalline quality, which is proved by the small full-width at half maximum values of GaN(0002) and GaN (10 1 bar 2) X-ray rocking curves as 0.27° and 0.68°, respectively. However, when the growth temperature is lower or higher than 850 °C, internal or thermal stress would be increased in as-grown GaN epitaxial films. To release the larger stress, a great number of dislocations are generated. Many irregular particulates, hexagonal GaN gains and pits are therefore produced on the films surface, and the crystalline quality is greatly reduced consequently. This work has demonstrated the direct growth of stress-free GaN epitaxial films with excellent surface morphology and high crystalline quality by PLD, and presented a comprehensive study on the origins and the effect of stress in GaN layer. It is instructional to achieve high-quality nitride films by PLD, and shows great potential and broad prospect for the further development of high-performance GaN-based devices.

  4. Nanostructured and amorphous-like tungsten films grown by pulsed laser deposition

    Science.gov (United States)

    Dellasega, D.; Merlo, G.; Conti, C.; Bottani, C. E.; Passoni, M.

    2012-10-01

    An experimental investigation of nanostructured, micrometer-thick, tungsten films deposited by pulsed laser deposition is presented. The films are compact and pore-free, with crystal grain sizes ranging from 14 nm to less than 2 nm. It is shown how, by properly tailoring deposition rate and kinetic energy of ablated species, it is possible to achieve a detailed and separate control of both film morphology and structure. The role of the main process parameters, He background pressure, laser fluence, and energy, is elucidated. In contrast with W films produced with other PVD techniques, β-phase growth is avoided and the presence of impurities and contaminants, like oxygen, is not correlated with film structure. These features make these films interesting for the development of coatings with improved properties, like increased corrosion resistance and enhanced diffusion barriers.

  5. Structure and optical properties of ZnS thin films grown by glancing angle deposition

    Science.gov (United States)

    Wang, Sumei; Fu, Xiaoyong; Xia, Guodong; Wang, Jianguo; Shao, Jianda; Fan, Zhengxiu

    2006-10-01

    The glancing angle deposition (GLAD) technique was used to deposit ZnS films by electron beam evaporation method. The cross sectional scanning electron microscopy (SEM) image illustrated a highly orientated microstructure composed of slanted column. The atomic force microscopy (AFM) analysis indicated that incident flux angle had significant effects on the nodule size and surface roughness. Under identical nominal thickness, the actual thickness of the GLAD films is related to the incident flux angle. The refractive index and in-plane birefringence of the GLAD ZnS films were discussed, and the maximum birefringence Δ n = 0.036 was obtained at incident flux angle of α = 80°. Therefore, the glancing angle deposition technique is a promising way to create a columnar structure with enhanced birefringent property.

  6. Structural and Optical Properties of CdS Thin Film Grown by Chemical Bath Deposition

    Directory of Open Access Journals (Sweden)

    S. Rajpal

    2013-07-01

    Full Text Available In this work we report synthesis and optical characterization of CdS thin films coated on glass substrate. The films were deposited using chemical bath deposition method. Scanning Electron microscopy shows a uniform film of CdS film at particular concentration and dipping time. The Energy Dispersive spectroscopy reveals the presence of Cd and S in the CdS film. X-Ray diffraction confirms the cubic structure of CdS deposited on glass and amorphous nature of glass. Optical and photoluminescence studies were done using UV-Visible spectroscopy and Photoluminescence spectroscopy respectively. We have determined bandgap by analyzing UV-Visible spectra results. Wettability studies were done using Optical Contact Angle, which confirms the hydrophobic nature of the CdS films.

  7. Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Adib Abou Chaaya

    2013-10-01

    Full Text Available A study of transmittance and photoluminescence spectra on the growth of oxygen-rich ultra-thin ZnO films prepared by atomic layer deposition is reported. The structural transition from an amorphous to a polycrystalline state is observed upon increasing the thickness. The unusual behavior of the energy gap with thickness reflected by optical properties is attributed to the improvement of the crystalline structure resulting from a decreasing concentration of point defects at the growth of grains. The spectra of UV and visible photoluminescence emissions correspond to transitions near the band-edge and defect-related transitions. Additional emissions were observed from band-tail states near the edge. A high oxygen ratio and variable optical properties could be attractive for an application of atomic layer deposition (ALD deposited ultrathin ZnO films in optical sensors and biosensors.

  8. Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition.

    Science.gov (United States)

    Abou Chaaya, Adib; Viter, Roman; Bechelany, Mikhael; Alute, Zanda; Erts, Donats; Zalesskaya, Anastasiya; Kovalevskis, Kristaps; Rouessac, Vincent; Smyntyna, Valentyn; Miele, Philippe

    2013-01-01

    A study of transmittance and photoluminescence spectra on the growth of oxygen-rich ultra-thin ZnO films prepared by atomic layer deposition is reported. The structural transition from an amorphous to a polycrystalline state is observed upon increasing the thickness. The unusual behavior of the energy gap with thickness reflected by optical properties is attributed to the improvement of the crystalline structure resulting from a decreasing concentration of point defects at the growth of grains. The spectra of UV and visible photoluminescence emissions correspond to transitions near the band-edge and defect-related transitions. Additional emissions were observed from band-tail states near the edge. A high oxygen ratio and variable optical properties could be attractive for an application of atomic layer deposition (ALD) deposited ultrathin ZnO films in optical sensors and biosensors.

  9. Photoreflectance for in-situ characterization of MOCVD growth of semiconductors under micro-gravity conditions

    Science.gov (United States)

    Pollak, Fred H.

    1990-01-01

    A contactless electromodulation technique of photoreflectance (PR) was developed for in-situ monitoring of metal-organic chemical vapor deposition (MOCVD) semiconductor growth for micro-gravity applications. PR can be employed in a real MOCVD reactor including rotating substrate (approximately 500 rev/min) in flowing gases and through a diffuser plate. Measurements on GaAs and Ga(0.82)Al(0.18)As were made up to 690 C. The direct band gaps of In(x)Ga(1-x)As (x = 0.07 and 0.16) were evaluated up to 600 C. In order to address the question of real time measurement, the spectra of the direct gap of GaAs at 650 C was obtained in 30 seconds and 15 seconds seems feasible.

  10. Tantalum films with well-controlled roughness grown by oblique incidence deposition

    Science.gov (United States)

    Rechendorff, K.; Hovgaard, M. B.; Chevallier, J.; Foss, M.; Besenbacher, F.

    2005-08-01

    We have investigated how tantalum films with well-controlled surface roughness can be grown by e-gun evaporation with oblique angle of incidence between the evaporation flux and the surface normal. Due to a more pronounced shadowing effect the root-mean-square roughness increases from about 2 to 33 nm as grazing incidence is approached. The exponent, characterizing the scaling of the root-mean-square roughness with length scale (α), varies from 0.75 to 0.93, and a clear correlation is found between the angle of incidence and root-mean-square roughness.

  11. Nanostructured silicon carbon thin films grown by plasma enhanced chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Coscia, U. [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); CNISM Unita' di Napoli, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Ambrosone, G., E-mail: ambrosone@na.infn.it [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); SPIN-CNR, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Basa, D.K. [Department of Physics, Utkal University, Bhubaneswar 751004 (India); Rigato, V. [INFN Laboratori Nazionali Legnaro, 35020 Legnaro (Padova) (Italy); Ferrero, S.; Virga, A. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)

    2013-09-30

    Nanostructured silicon carbon thin films, composed of Si nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by varying rf power in ultra high vacuum plasma enhanced chemical vapour deposition system using silane and methane gas mixtures diluted in hydrogen. In this paper we have studied the compositional, structural and electrical properties of these films as a function of rf power. It is shown that with increasing rf power the atomic densities of carbon and hydrogen increase while the atomic density of silicon decreases, resulting in a reduction in the mass density. Further, it is demonstrated that carbon is incorporated into amorphous matrix and it is mainly bonded to silicon. The study has also revealed that the crystalline volume fraction decreases with increase in rf power and that the films deposited with low rf power have a size distribution of large and small crystallites while the films deposited with relatively high power have only small crystallites. Finally, the enhanced transport properties of the nanostructured silicon carbon films, as compared to amorphous counterpart, have been attributed to the presence of Si nanocrystallites. - Highlights: • The mass density of silicon carbon films decreases from 2.3 to 2 g/cm{sup 3}. • Carbon is incorporated in the amorphous phase and it is mainly bonded to silicon. • Nanostructured silicon carbon films are deposited at rf power > 40 W. • Si nanocrystallites in amorphous silicon carbon enhance the electrical properties.

  12. Single-crystal nanowires grown via electron-beam-induced deposition

    Science.gov (United States)

    Klein, K. L.; Randolph, S. J.; Fowlkes, J. D.; Allard, L. F.; Meyer, H. M., III; Simpson, M. L.; Rack, P. D.

    2008-08-01

    Electron-beam-induced deposition (EBID) is a useful technique for direct-writing of three-dimensional dielectric, semiconductor, and metallic materials with nanoscale precision and resolution. The EBID process, however, has been limited in many cases because precursor byproducts (typically from organic precursors like W(CO)6) are incorporated into the deposited material resulting in contaminated and amorphous structures. In this work, we have investigated the structure and composition of EBID tungsten nanostructures as-deposited from a tungsten hexafluoride (WF6) precursor. High resolution transmission electron microscopy, electron diffraction and electron spectroscopy were employed to determine the effects that the electron beam scanning conditions have on the deposit characteristics. The results show that slow, one-dimensional lateral scanning produces textured β-tungsten nanowire cores surrounded by an oxide secondary layer, while stationary vertical growth leads to single-crystal [100]-oriented W3O nanowires. Furthermore we correlate how the growth kinetics affect the resultant nanowire structure and composition.

  13. Single-crystal nanowires grown via electron-beam-induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Klein, K L; Randolph, S J; Simpson, M L; Rack, P D [Materials Science and Engineering Department, University of Tennessee, 434 Dougherty Hall, Knoxville, TN 37996 (United States); Fowlkes, J D [Center for Nanophase Materials Sciences Division, Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, TN 37831 (United States); Allard, L F; III, H M Meyer [Materials Science and Technology Division, Oak Ridge National Laboratory, PO Box 2008, Oak Ridge, TN 37831 (United States)], E-mail: prack@utk.edu

    2008-08-27

    Electron-beam-induced deposition (EBID) is a useful technique for direct-writing of three-dimensional dielectric, semiconductor, and metallic materials with nanoscale precision and resolution. The EBID process, however, has been limited in many cases because precursor byproducts (typically from organic precursors like W(CO){sub 6}) are incorporated into the deposited material resulting in contaminated and amorphous structures. In this work, we have investigated the structure and composition of EBID tungsten nanostructures as-deposited from a tungsten hexafluoride (WF{sub 6}) precursor. High resolution transmission electron microscopy, electron diffraction and electron spectroscopy were employed to determine the effects that the electron beam scanning conditions have on the deposit characteristics. The results show that slow, one-dimensional lateral scanning produces textured {beta}-tungsten nanowire cores surrounded by an oxide secondary layer, while stationary vertical growth leads to single-crystal [100]-oriented W{sub 3}O nanowires. Furthermore we correlate how the growth kinetics affect the resultant nanowire structure and composition.

  14. Fluence dependent electrical conductivity in aluminium thin films grown by infrared pulsed laser deposition

    Science.gov (United States)

    Rebollar, Esther; Martínez-Tong, Daniel E.; Sanz, Mikel; Oujja, Mohamed; Marco, José F.; Ezquerra, Tiberio A.; Castillejo, Marta

    2016-11-01

    We studied the effect of laser fluence on the morphology, composition, structure and electric conductivity of deposits generated by pulsed laser ablation of a metallic aluminium target in vacuum using a Q-switched Nd:YAG laser (1064 nm, 15 ns). Upon irradiation for one hour at a repetition rate of 10 Hz, a smooth layer of several tens of nanometres, as revealed by atomic force microscopy (AFM) was deposited on glass. Surface chemical composition was determined by X-ray photoelectron spectroscopy, and to study the conductivity of deposits both I-V curves and conductive-AFM measurements were performed. Irradiation at fluences around 2.7 J/cm2 resulted in deposition of amorphous aluminium oxide films. Differently, at higher fluences above 7 J/cm2, the films are constituted by metallic aluminium. Optical emission spectroscopy revealed that highly ionized species are more abundant in the ablation plumes generated at higher fluences. The results demonstrate the possibility to control by PLD the metal or dielectric character of the films.

  15. Crystalline inverted membranes grown on surfaces by electrospray ion beam deposition in vacuum.

    Science.gov (United States)

    Rauschenbach, Stephan; Rinke, Gordon; Malinowski, Nikola; Weitz, R Thomas; Dinnebier, Robert; Thontasen, Nicha; Deng, Zhitao; Lutz, Theresa; de Almeida Rollo, Pedro Martins; Costantini, Giovanni; Harnau, Ludger; Kern, Klaus

    2012-05-22

    Crystalline inverted membranes of the nonvolatile surfactant sodium dodecylsulfate are found on solid surfaces after electrospray ion beam deposition (ES-IBD) of large SDS clusters in vacuum. This demonstrates the equivalence of ES-IBD to conventional molecular beam epitaxy.

  16. Fluence dependent electrical conductivity in aluminium thin films grown by infrared pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rebollar, Esther, E-mail: e.rebollar@csic.es [Instituto de Química Física Rocasolano, IQFR-CSIC, Serrano 19, 28006 Madrid (Spain); Martínez-Tong, Daniel E. [Instituto de Estructura de la Materia, IEM-CSIC, Serrano 121, 28006 Madrid (Spain); Sanz, Mikel; Oujja, Mohamed; Marco, José F. [Instituto de Química Física Rocasolano, IQFR-CSIC, Serrano 19, 28006 Madrid (Spain); Ezquerra, Tiberio A. [Instituto de Estructura de la Materia, IEM-CSIC, Serrano 121, 28006 Madrid (Spain); Castillejo, Marta [Instituto de Química Física Rocasolano, IQFR-CSIC, Serrano 19, 28006 Madrid (Spain)

    2016-11-30

    Highlights: • IR pulsed laser ablation of aluminium gives rise to smooth layers of several tens of nanometers. • Irradiation at fluences around 2.7 J/cm{sup 2} and above 7 J/cm{sup 2} resulted in deposition of amorphous aluminium oxide films and metallic aluminium films respectively. • Highly ionized species are more abundant in the ablation plumes generated at higher fluences. • It is possible to control by PLD the metal or dielectric character of the films. - Abstract: We studied the effect of laser fluence on the morphology, composition, structure and electric conductivity of deposits generated by pulsed laser ablation of a metallic aluminium target in vacuum using a Q-switched Nd:YAG laser (1064 nm, 15 ns). Upon irradiation for one hour at a repetition rate of 10 Hz, a smooth layer of several tens of nanometres, as revealed by atomic force microscopy (AFM) was deposited on glass. Surface chemical composition was determined by X-ray photoelectron spectroscopy, and to study the conductivity of deposits both I–V curves and conductive-AFM measurements were performed. Irradiation at fluences around 2.7 J/cm{sup 2} resulted in deposition of amorphous aluminium oxide films. Differently, at higher fluences above 7 J/cm{sup 2}, the films are constituted by metallic aluminium. Optical emission spectroscopy revealed that highly ionized species are more abundant in the ablation plumes generated at higher fluences. The results demonstrate the possibility to control by PLD the metal or dielectric character of the films.

  17. Characterization of dielectric layers grown at low temperature by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gieraltowska, Sylwia, E-mail: sgieral@ifpan.edu.pl [Institute of Physics Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Wachnicki, Lukasz; Witkowski, Bartlomiej S. [Institute of Physics Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Mroczynski, Robert [Warsaw University of Technology, Institute of Microelectronics and Optoelectronics, Koszykowa 75, 00-662 Warsaw (Poland); Dluzewski, Piotr [Institute of Physics Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Godlewski, Marek [Institute of Physics Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Department of Mathematics and Natural Sciences, College of Science, Cardinal S. Wyszyński University, Dewajtis 5, 01-815 Warsaw (Poland)

    2015-02-27

    Dielectric films, such as hafnium dioxide (HfO{sub 2}), aluminum oxide (Al{sub 2}O{sub 3}), zirconium dioxide (ZrO{sub 2}), titanium dioxide (TiO{sub 2}) and their composite layers are deposited on polycrystalline and amorphous substrates by the atomic layer deposition (ALD) method. We demonstrate that the use of this technology guarantees a uniform and controlled surface coverage in the nanometer scale at low temperatures (in our case, below 100 °C). Modification of the composition of oxide layers allows the deposition of materials with quite different absorption coefficients, refractive indexes and dielectric constants. In particular, we demonstrate structural, electrical and optical properties of dielectric layers and test metal-oxide-semiconductor structures with these oxide materials. Our good quality dielectric layers, obtained at low-temperature ALD, are characterized by a high dielectric constant (above 10), very smooth surface, wide energy gap (above 3 eV), low leakage current (in the range of 10{sup −8} A/cm{sup 2} at 1 V), high dielectric strength (even 6 MV/cm) and high refractive indexes (above 1.5 in the visible spectral range). - Highlights: • We demonstrate the use of atomic layer deposition (ALD) at low temperatures (LT). • LT ALD guarantees a uniform and controlled surface coverage of dielectrics. • In our case, the dielectric films were deposited at very LT, below 100 °C. • Dielectrics (HfO{sub 2}, Al{sub 2}O{sub 3}, ZrO{sub 2}, TiO{sub 2} and composite layers) are obtained by ALD. • Our results also indicate high-quality dielectric films.

  18. Structural and functional properties of Al:ZnO thin films grown by Pulsed Laser Deposition at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Gondoni, P.; Ghidelli, M. [Dipartimento di Energia and NEMAS - Center for NanoEngineered Materials and Surfaces, Politecnico di Milano, via Ponzio 34/3, 20133 Milano (Italy); Di Fonzo, F. [Center for Nano Science and Technology Polimi, Istituto Italiano di Tecnologia, via Pascoli 70/3, 20133 Milano (Italy); Russo, V. [Dipartimento di Energia and NEMAS - Center for NanoEngineered Materials and Surfaces, Politecnico di Milano, via Ponzio 34/3, 20133 Milano (Italy); Bruno, P.; Marti-Rujas, J. [Center for Nano Science and Technology Polimi, Istituto Italiano di Tecnologia, via Pascoli 70/3, 20133 Milano (Italy); Bottani, C.E.; Li Bassi, A. [Dipartimento di Energia and NEMAS - Center for NanoEngineered Materials and Surfaces, Politecnico di Milano, via Ponzio 34/3, 20133 Milano (Italy); Center for Nano Science and Technology Polimi, Istituto Italiano di Tecnologia, via Pascoli 70/3, 20133 Milano (Italy); Casari, C.S., E-mail: carlo.casari@polimi.it [Dipartimento di Energia and NEMAS - Center for NanoEngineered Materials and Surfaces, Politecnico di Milano, via Ponzio 34/3, 20133 Milano (Italy); Center for Nano Science and Technology Polimi, Istituto Italiano di Tecnologia, via Pascoli 70/3, 20133 Milano (Italy)

    2012-05-01

    Current research on transparent conductive oxides (TCOs) is focusing on indium-free TCOs, such as Al-doped ZnO (AZO), as an alternative to indium-tin oxide. In this work, AZO thin films were grown by Pulsed Laser Deposition at room temperature in oxygen atmosphere. The O{sub 2} pressure was varied from 0.01 Pa to 10 Pa, highlighting the effects of defect formation and oxygen vacancies on the film properties. Structural properties were characterized by X-ray diffraction and Scanning Electron Microscopy, while functional properties were characterized by measurement of electrical conductivity, Hall mobility, carrier density and optical transmission. At an optimal deposition pressure of 2 Pa, optical transparency in the visible range and minimum resistivity (4.5 Bullet-Operator 10{sup -4} {Omega} cm) were found, comparable to state-of-the-art TCOs. Mean value of visible transparency was shown to increase with increasing pressure, up to 88% at a deposition pressure of 10 Pa.

  19. Characteristics of atomic layer deposition grown HfO{sub 2} films after exposure to plasma treatments

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Y.W. [Kookje Electric Korea Co. LTD, 4-2 Chaam-Dong, Chonan-Si, Chungcheongnam-Do (Korea, Republic of)]. E-mail: ywkim@kekorea.co.kr; Roh, Y. [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yoo, Ji-Beom [School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)]. E-mail: jibyoo@skku.ac.kr; Kim, Hyoungsub [School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2007-01-22

    Ultra thin HfO{sub 2} films were grown by the atomic layer deposition (ALD) technique using tetrakismethylethylaminohafnium (Hf[N(CH){sub 3}(C{sub 2}H{sub 5})]{sub 4}) and ozone (O{sub 3}) as the precursors and subsequently exposed to various plasma conditions, i.e., CCP (capacitively coupled plasma) and MMT (modified magnetron typed plasma) in N{sub 2} or N{sub 2}/O{sub 2} ambient. The conventional CCP treatment was not effective in removing the carbon impurities, which were incorporated during the ALD process, from the HfO{sub 2} films. However, according to the X-ray photoelectron spectroscopy measurements, the MMT treated films exhibited a significant reduction in their carbon contents and the efficient incorporation of nitrogen atoms. Although the incorporated nitrogen was easily released during the post-thermal annealing of the MMT treated samples, it was more effective than the CCP treatment in removing the film impurities. Consequently, the MMT treated samples exhibited excellent electrical properties as compared to the as-deposited HfO{sub 2} films, including negligible hysteresis (flatband voltage shift), a low leakage current, and the reduced equivalent oxide thickness of the gate stack. In conclusion, MMT post treatment is more effective than conventional CCP treatment in improving the electrical properties of high-k films by reducing the carbon contamination and densifying the as-deposited defective films.

  20. Three-dimensional core-shell ferromagnetic nanowires grown by focused electron beam induced deposition

    Science.gov (United States)

    Pablo-Navarro, Javier; Magén, César; María de Teresa, José

    2016-07-01

    Functional nanostructured materials often rely on the combination of more than one material to confer the desired functionality or an enhanced performance of the device. Here we report the procedure to create nanoscale heterostructured materials in the form of core-shell nanowires by focused electron beam induced deposition (FEBID) technologies. In our case, three-dimensional (3D) nanowires (nanostructures to demonstrate that the morphology of the shell is conserved during Pt coating, the surface oxidation is suppressed or confined to the Pt layer, and the average magnetization of the core is strengthened up to 30%. The proposed approach paves the way to the fabrication of 3D FEBID nanostructures based on the smart alternate deposition of two or more materials combining different physical properties or added functionalities.

  1. Study of structural and optical properties of ZnO films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Lemlikchi, S., E-mail: lemlikchi_safo@yahoo.fr [Advanced Technology Development Centre, Cite 20 Aout 1956 BP 17 Baba Hassen, Algiers (Algeria); Abdelli-Messaci, S.; Lafane, S.; Kerdja, T. [Advanced Technology Development Centre, Cite 20 Aout 1956 BP 17 Baba Hassen, Algiers (Algeria); Guittoum, A.; Saad, M. [Nuclear Research Centre of Algiers, 2 Bd Frantz-Fanon, Algiers (Algeria)

    2010-07-01

    Wurtzite zinc oxides films (ZnO) were deposited on silicon (0 0 1) and corning glass substrates using the pulsed laser deposition technique. The laser fluence, target-substrate distance, substrate temperature of 300 deg. C were fixed while varying oxygen pressures from 2 to 500 Pa were used. It is observed that the structural properties of ZnO films depend strongly on the oxygen pressure and the substrate nature. The film crystallinity improves with decreasing oxygen pressure. At high oxygen pressure, the films are randomly oriented, whereas, at low oxygen pressures they are well oriented along [0 0 1] axis for Si substrates and along [1 0 3] axis for glass substrates. A honeycomb structure is obtained at low oxygen pressures, whereas microcrystalline structures were obtained at high oxygen pressures. The effect of oxygen pressure on film transparency, band gap E{sub g} and Urbach energies was investigated.

  2. Preparation and characterization of LaNiO3 films grown by metal–organic deposition

    Indian Academy of Sciences (India)

    Yao Wang; Guofang Zhang; Chengshan Li; Guo Yan; Yafeng Lu

    2011-12-01

    We have investigated the synthesis and characterization of LaNiO3 (LNO) layers deposited on YSZ (100) substrate by metal–organic deposition (MOD). Texture, morphology and electrical properties of the LaNiO3 films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and electrical resistivity measurement. It has been found that the formation of (ℎ00) orientation depends on pyrolysis temperature, annealing temperature and thickness of LaNiO3 layers. The LaNiO3 films prepared under optimal condition indicate highly (ℎ00) orientation and a rather smooth surface. The LaNiO3 films show a metallic behaviour in the measured temperature range.

  3. Optimization of Energy Scope for Titanium Nitride Films Grown by Ion Beam-Assisted Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Wei; MA Zhong-Quan; WANG Ye; WANG De-Ming

    2006-01-01

    The deposited energy during film growth with ion bombardment, correlated to the atomic displacement on the surface monolayer and the underlying bulk, has been calculated by a simplified ion-solid interaction model under binary collision approximation. The separated damage energies caused by Ar ion, different for the surface and the bulk, have been determined under the standard collision cross section and a well-defined surface and bulk atom displacement threshold energy of titanium nitride (TiN). The optimum energy scope shows that the incident energy of Ar+ around 110eV for TiN (111) and 80eV for TiN (200) effectively enhances the mobility of adatom on surface but excludes the damage in underlying bulk. The theoretical prediction and the experimental result are in good agreement in low energy ion beam-assisted deposition.

  4. Structural and morphological properties of metallic thin films grown by pulsed laser deposition for photocathode application

    Science.gov (United States)

    Lorusso, A.; Gontad, F.; Caricato, A. P.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-03-01

    In this work yttrium and lead thin films have been deposited by pulsed laser deposition technique and characterized by ex situ different diagnostic methods. All the films were adherent to the substrates and revealed a polycrystalline structure. Y films were uniform with a very low roughness and droplet density, while Pb thin films were characterized by a grain morphology with a relatively high roughness and droplet density. Such metallic materials are studied because they are proposed as a good alternative to copper and niobium photocathodes which are generally used in radiofrequency and superconducting radiofrequency guns, respectively. The photoemission performances of the photocathodes based on Y and Pb thin films have been also studied and discussed.

  5. On the wetting behavior of ceria thin films grown by pulsed laser deposition

    Science.gov (United States)

    Fu, Sin-Pui; Rossero, Jorge; Chen, Chen; Li, Daniel; Takoudis, Christos G.; Abiade, Jeremiah T.

    2017-02-01

    Polymers are most widely used in the production of water-repellant coatings. However, their use in applications requiring wear resistance or high-temperature stability is extremely limited. A recent report suggests that wear resistant, thermally stable rare earth oxide materials like cerium dioxide (ceria) are intrinsically water repellant. We have studied this intriguing finding for ceria thin films fabricated by pulsed laser deposition (PLD) at different oxygen pressures and different substrate temperatures. We used a custom apparatus for measuring water contact angles on ceria films deposited by PLD. X-ray photoelectron spectroscopy was used to determine the relationship between the ceria wetting behavior and ceria surface chemistry. Our results show that ceria thin films are intrinsically hydrophilic and that hydrophobicity arises due to adsorption of hydrocarbon species after ˜24 h.

  6. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  7. Facile Route to NiO Nanostructured Electrode Grown by Oblique Angle Deposition Technique for Supercapacitors.

    Science.gov (United States)

    Kannan, Vasudevan; Inamdar, Akbar I; Pawar, Sambaji M; Kim, Hyun-Seok; Park, Hyun-Chang; Kim, Hyungsang; Im, Hyunsik; Chae, Yeon Sik

    2016-07-13

    We report an efficient method for growing NiO nanostructures by oblique angle deposition (OAD) technique in an e-beam evaporator for supercapacitor applications. This facile physical vapor deposition technique combined with OAD presents a unique, direct, and economical route for obtaining high width-to-height ratio nanorods for supercapacitor electrodes. The NiO nanostructure essentially consists of nanorods with varying dimensions. The sample deposited at OAD 75° showed highest supercapacitance value of 344 F/g. NiO nanorod electrodes exhibits excellent electrochemical stability with no degradation in capacitance after 5000 charge-discharge cycles. The nanostructured film adhered well to the substrate and had 131% capacity retention. Peak energy density and power density of the NiO nanorods were 8.78 Wh/kg and 2.5 kW/kg, respectively. This technique has potential to be expanded for growing nanostructured films of other interesting metal/metal oxide candidates for supercapacitor applications.

  8. X-ray reflectivity analysis of titanium dioxide thin films grown by cathodic arc deposition.

    Science.gov (United States)

    Kleiman, A; Lamas, D G; Craievich, A F; Márquez, A

    2014-05-01

    TiO2 thin films deposited by a vacuum arc on a glass substrate were characterized by X-ray reflectivity (XRR), X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Several thin films with different amounts of deposited TiO2 mass and different deposition and annealing temperatures were studied. A qualitative analysis of the XRD patterns indicated the presence of the anatase and/or rutile crystalline phases in most of the studied samples. From the analysis of the experimental XRR curves--which exhibited a wide angular range of oscillatory behavior--the thickness, mass density and interface roughness were determined. All XRR patterns were well fitted by modeled curves that assume the presence of a single and homogeneous TiO2 layer over which a very thin H2O layer is adsorbed. The thickest H2O adsorption layers were developed in films with the highest anatase content. Our overall results of the XRR analyses are consistent with those derived from the imaging techniques (SEM and AFM).

  9. Structural transformations in MoO{sub x} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Camacho-Lopez, M.A.; Haro-Poniatowski, E. [Departamento de Fisica, Laboratorio de Optica Cuantica, Universidad Autonoma Metropolitana Iztapalapa, Apdo. Postal 55-534, 09340, Mexico D. F. (Mexico); Escobar-Alarcon, L. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, 11801, Mexico D. F. (Mexico)

    2004-01-01

    In this work, laser-induced crystallization in MoO{sub x} thin films (1.8{<=}x{<=}2.1) is reported. This transformation involves a MoO{sub x} oxidation and subsequently a crystallization process from amorphous MoO{sub 3} to crystalline {alpha}MoO{sub 3}. For comparison purposes crystallization is induced thermally, in an oven, as well. The crystallization kinetics is monitored by Raman spectroscopy; a threshold in the energy density necessary to induce the phase transformation is determined in the case of photo-crystallization. This threshold depends on the type of substrate on which the film is deposited. For the thin films deposited on glass substrates, the structural transformation is from amorphous MoO{sub x} to the thermodynamically stable {alpha}MoO{sub 3} crystalline phase. For the thin films deposited on Si(100) the structural transformation is from amorphous MoO{sub x} to a mixture of {alpha}MoO{sub 3} and the thermodynamically unstable {beta}MoO{sub 3} crystalline phases. The structural transformations are also characterized by scanning electron microscopy and light-transmission experiments. (orig.)

  10. Wetting behaviour of carbon nitride nanostructures grown by plasma enhanced chemical vapour deposition technique

    Science.gov (United States)

    Ahmad Kamal, Shafarina Azlinda; Ritikos, Richard; Abdul Rahman, Saadah

    2015-02-01

    Tuning the wettability of various coating materials by simply controlling the deposition parameters is essential for various specific applications. In this work, carbon nitride (CNx) films were deposited on silicon (1 1 1) substrates using radio-frequency plasma enhanced chemical vapour deposition employing parallel plate electrode configuration. Effects of varying the electrode distance (DE) on the films' structure and bonding properties were investigated using Field emission scanning electron microscopy, Atomic force microscopy, Fourier transform infrared and X-ray photoemission spectroscopy. The wettability of the films was analyzed using water contact angle measurements. At high DE, the CNx films' surface was smooth and uniform. This changed into fibrous nanostructures when DE was decreased. Surface roughness of the films increased with this morphological transformation. Nitrogen incorporation increased with decrease in DE which manifested the increase in both relative intensities of Cdbnd N to Cdbnd C and Nsbnd H to Osbnd H bonds. sp2-C to sp3-C ratio increased as DE decreased due to greater deformation of sp2 bonded carbon at lower DE. The films' characteristics changed from hydrophilic to super-hydrophobic with the decrease in DE. Roughness ratio, surface porosity and surface energy calculated from contact angle measurements were strongly dependent on the morphology, surface roughness and bonding properties of the films.

  11. Thin films of copper oxide and copper grown by atomic layer deposition for applications in metallization systems of microelectronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Waechtler, Thomas

    2010-05-25

    Copper-based multi-level metallization systems in today's ultralarge-scale integrated electronic circuits require the fabrication of diffusion barriers and conductive seed layers for the electrochemical metal deposition. Such films of only several nanometers in thickness have to be deposited void-free and conformal in patterned dielectrics. The envisaged further reduction of the geometric dimensions of the interconnect system calls for coating techniques that circumvent the drawbacks of the well-established physical vapor deposition. The atomic layer deposition method (ALD) allows depositing films on the nanometer scale conformally both on three-dimensional objects as well as on large-area substrates. The present work therefore is concerned with the development of an ALD process to grow copper oxide films based on the metal-organic precursor bis(trin- butylphosphane)copper(I)acetylacetonate [({sup n}Bu{sub 3}P){sub 2}Cu(acac)]. This liquid, non-fluorinated {beta}-diketonate is brought to react with a mixture of water vapor and oxygen at temperatures from 100 to 160 C. Typical ALD-like growth behavior arises between 100 and 130 C, depending on the respective substrate used. On tantalum nitride and silicon dioxide substrates, smooth films and selfsaturating film growth, typical for ALD, are obtained. On ruthenium substrates, positive deposition results are obtained as well. However, a considerable intermixing of the ALD copper oxide with the underlying films takes place. Tantalum substrates lead to a fast self-decomposition of the copper precursor. As a consequence, isolated nuclei or larger particles are always obtained together with continuous films. The copper oxide films grown by ALD can be reduced to copper by vapor-phase processes. If formic acid is used as the reducing agent, these processes can already be carried out at similar temperatures as the ALD, so that agglomeration of the films is largely avoided. Also for an integration with subsequent

  12. Diamond films grown on seeded substrates by hot-filament chemical vapour deposition with H sub 2 as the only feeding gas

    CERN Document Server

    LiuHongWu; Gao Chun Xi; Han Yong; Luo Ji Feng; Zou Guang Tian; Wen Chao

    2002-01-01

    Diamond films have been grown on polished Si substrates seeded with nanocrystalline diamond powder colloid using hot-filament chemical vapour deposition. Instead of using the conventional gaseous carbon source, a carbonized W filament was used as the carbon source. The only feeding gas was hydrogen. Compared with those produced by traditional methods, the polycrystalline diamond grown by this new method has smaller grain size. The growth mechanism is also discussed.

  13. Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

    KAUST Repository

    Xing, G. Z.

    2014-05-23

    We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC.

  14. Novel fully vertical GaN p-n diode on Si substrate grown by metalorganic chemical vapor deposition

    Science.gov (United States)

    Mase, Suguru; Urayama, Yuya; Hamada, Takeaki; Freedsman, Joseph J.; Egawa, Takashi

    2016-11-01

    We report novel GaN fully vertical p-n diode on Si grown by metalorganic chemical vapor deposition. The thick strained layer superlattice is effective in controlling a doping level of 1016 cm-3 in an n--GaN drift layer. The GaN p-n diode exhibits a differential on-resistance R on of 7.4 mΩ cm2, a turn-on voltage of 3.4 V, and a breakdown voltage V B of 288 V. The corresponding Baliga’s figure of merit (FOM) V\\text{B}2/R\\text{on} is 11.2 MW/cm2. A good FOM value for the GaN-on-Si vertical p-n diode is realized for a drift layer thickness of 1.5 µm without using substrate removal technology.

  15. Au/n-InP Schottky diodes using an Al2O3 interfacial layer grown by atomic layer deposition

    Science.gov (United States)

    Kim, Hogyoung; Kim, Min Soo; Yoon, Seung Yu; Choi, Byung Joon

    2017-02-01

    We investigated the effect of an Al2O3 interfacial layer grown by atomic layer deposition on the electrical properties of Au Schottky contacts to n-type InP. Considering barrier inhomogeneity, modified Richardson plots yielded a Richardson constant of 8.4 and 7.5 Acm-2K-2, respectively, for the sample with and without the Al2O3 interlayer (theoretical value of 9.4 Acm-2K-2 for n-type InP). The dominant reverse current flow for the sample with an Al2O3 interlayer was found to be Poole-Frenkel emission. From capacitance-voltage measurements, it was observed that the capacitance for the sample without the Al2O3 interlayer was frequency dependent. Sputter-induced defects as well as structural defects were passivated effectively with an Al2O3 interlayer.

  16. Properties of La and Nb-modified PZT thin films grown by radio frequency assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Verardi, P. [CNR-Istituto di Acustica, Via del Fosso del Cavaliere 100, I-00133 Rome (Italy); Craciun, F. [CNR-Istituto dei Sistemi Complessi, Via del Fosso del Cavaliere 100, I-00133 Rome (Italy); Dinescu, M. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania)]. E-mail: dinescum@ifin.nipne.ro; Scarisoreanu, N. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania); Moldovan, A. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania); Purice, A. [NILPRP, Bucharest, PO Box MG-16, RO-76900 (Romania); Galassi, C. [CNR-ISTEC, Via Granarolo 64, I 48018 Faenza (Italy)

    2005-04-25

    Lead zirconate titanate ferroelectric thin films added with La and Nb has been grown by radio frequency assisted pulsed laser deposition on Pt/Si, starting from sintered targets. The dielectric properties were measured in a large frequency range and their dependence on the a.c. driving field amplitude has been investigated. A linear decreasing of the dielectric permittivity with frequency logarithm increasing has been evidenced. The most important factor for the driving field amplitude influence on the dielectric properties is the type of vacancies introduced by La and Nb substitutions, which indicates that the dynamics involved in a.c. field behavior is controlled by interaction mechanisms between ferroelectric domain or nanodomain walls and pinning (vacancies) centers.

  17. Low Density Self-Assembled InAs/GaAs Quantum Dots Grown by Metal Organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    LI Lin; LIU Guo-Jun; WANG Xiao-Hua; LI Mei; LI Zhan-Guo; WAN Chun-Ming

    2008-01-01

    The serf-assembled InAs quantum dots (QDs) on GaAs substrates with low density (5×108cm-2) are achieved using relatively higher growth temperature and low InAs coverage by low-pressure metal-organic chemical vapour deposition.The macro-PL spectra exhibit three emission peaks at 1361,1280 and 1204nm,corresponding to the ground level (GS),the first excited state (ES1) and the second excited state (ES2) of the QDs,respectively,which are obtained when the GaAs capping layer/s grown using triethylgallium and tertiallybutylarsine.As a result of micro-PL,only a few peaks from individual dots have been observed.The exciton-biexciton behaviour was clearly observed at low temperature.

  18. Immobilization of carbon nanotubes on functionalized graphene film grown by chemical vapor deposition and characterization of the hybrid material

    Directory of Open Access Journals (Sweden)

    Prashanta Dhoj Adhikari

    2014-01-01

    Full Text Available We report the surface functionalization of graphene films grown by chemical vapor deposition and fabrication of a hybrid material combining multi-walled carbon nanotubes and graphene (CNT–G. Amine-terminated self-assembled monolayers were prepared on graphene by the UV-modification of oxidized groups introduced onto the film surface. Amine-termination led to effective interaction with functionalized CNTs to assemble a CNT–G hybrid through covalent bonding. Characterization clearly showed no defects of the graphene film after the immobilization reaction with CNT. In addition, the hybrid graphene material revealed a distinctive CNT–G structure and p–n type electrical properties. The introduction of functional groups on the graphene film surface and fabrication of CNT–G hybrids with the present technique could provide an efficient, novel route to device fabrication.

  19. Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    陆敏; 常昕; 黎子兰; 杨志坚; 张国义; 章蓓

    2003-01-01

    High quality epitaxial GaN films on (0001) sapphire substrates were grown by a commercial metal-organic chemical vapour deposition system. The, etch pits and threading dislocations in GaN films is studied by a scanning electron microscope (SEM) and a transmission-electron microscope (TEM). The SEM images of GaN films, etched in mixed acid solution (H3PO4:H2SO4 = 1: 3) and molten KOH exhibit notably different, etching pit densities of 5 × 108/cm2 and 4 × 107/cm2, respectively, which probably indicate that more kinds of, etching pits were revealed when, etched in mixed acid solution (H3PO4:H2SO4 = 1: 3). Cross section TEM of GaN films with different g vectors showed the portions of different threading dislocations. Theoretical calculation indicates that the lattice and thermal expansion coefficient mismatch may be the main origins of pure edge threading dislocations.

  20. Study of High-Quality GeSn Alloys Grown by Chemical Vapor Deposition towards Mid-Infrared Applications

    Science.gov (United States)

    Al-Kabi, Sattar; Ghetmiri, Seyed Amir; Margetis, Joe; Du, Wei; Mosleh, Aboozar; Dou, Wei; Sun, Greg; Soref, Richard A.; Tolle, John; Li, Baohua; Mortazavi, Mansour; Naseem, Hameed A.; Yu, Shui-Qing

    2016-12-01

    Germanium-tin (GeSn) films with Sn compositions from 5% to 11% were grown on Ge-buffered Si using a reduced pressure chemical vapor deposition system with low-cost SnCl4 and GeH4 precursors. Material characterization showed that relaxed GeSn layers with thicknesses ranging from 400 nm to 1 μm were achieved. The strong photoluminescence (PL) intensity and the low defect density indicated very high material quality. In addition, temperature-dependent 10-300 K photoluminescence spectra showed that, due to strain relaxation of the material, the emission wavelength is longer than that of strained GeSn thin film samples ( t GeSn layer and 11% Sn composition.

  1. Photoluminescence associated with basal stacking faults in c-plane ZnO epitaxial film grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yang, S.; Kuo, C. C.; Hsieh, W. F. [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Liu, W.-R. [Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Lin, B. H. [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Hsu, H.-C. [Institute of Electro-Optical Science and Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Hsu, C.-H. [Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

    2012-03-05

    Basal plane stacking faults (BSFs) with density of {approx}1 x 10{sup 6} cm{sup -1} are identified as the dominant defect in the annealed ZnO thin films grown on c-plane sapphire by atomic layer deposition. The dominant peak centered at 3.321 eV in low-temperature photoluminescence measurements is attributed to the emission from the BSFs. The emission mechanism is considered to be the confined indirect excitons in the region of quantum-well-like structure formed by the BSFs. The observed energy shift of 19 meV with respect to the BSF-bounded exciton at low temperature may be caused by the localization effect associated with the coupling between BSF quantum wells.

  2. Formation of perfectly aligned nitrogen-vacancy-center ensembles in chemical-vapor-deposition-grown diamond (111)

    Science.gov (United States)

    Ozawa, Hayato; Tahara, Kosuke; Ishiwata, Hitoshi; Hatano, Mutsuko; Iwasaki, Takayuki

    2017-04-01

    Selectively aligning a nitrogen-vacancy (NV) ensemble in diamond is an important technique for obtaining a high-sensitivity magnetic sensor. Nitrogen-doped diamonds were grown on (111) substrates by microwave plasma chemical vapor deposition to perform the selective alignment of high-density NV ensembles, yielding perfectly aligned NV ensembles along the [111] direction with a density greater than 1016 cm‑3 and a spin relaxation time of 2 µs. Such alignment results in a high signal contrast with an optical magnetic resonance close to the typical value reported with an isolated NV center. These results indicate the possibility of achieving a high sensitivity through the selective alignment of NV ensembles.

  3. MOCVD of ZrO2 films from $bis(t$-butyl-3-oxo-butanoato)zirconium(IV): some theoretical (thermodynamic) and experimental aspects

    Indian Academy of Sciences (India)

    Sukanya Dhar; M S Dharmaprakash; S A Shivashankar

    2008-02-01

    The equilibrium concentrations of various condensed and gaseous phases were calculated from thermodynamic modeling of MOCVD of ZrO2 films using a -ketoesterate complex of zirconium as precursor. This leads to the construction of the `CVD phase stability diagram’ for the formation of solid phases. In the reactive ambient of oxygen, the calculations predict carbon-free ZrO2 film over a wide range of process conditions. The thermodynamic yields are in reasonable agreement with experimental observations, though the removal of carbon from the MOCVD grown films is not as complete as the thermodynamic calculations predict.

  4. Bonding structure and morphology of chromium oxide films grown by pulsed-DC reactive magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gago, R., E-mail: rgago@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme IKTS, D-01277 Dresden (Germany); Hübner, R. [Helmholtz-Zentrum Dresden – Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany); Redondo-Cubero, A. [Departamento de Física Aplicada and Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain)

    2016-07-05

    Chromium oxide (CrO{sub x}) thin films were grown by pulsed-DC reactive magnetron sputter deposition in an Ar/O{sub 2} discharge as a function of the O{sub 2} fraction in the gas mixture (ƒ) and for substrate temperatures, T{sub s}, up to 450 °C. The samples were analysed by Rutherford backscattering spectrometry (RBS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), scanning (SEM) and transmission (TEM) electron microscopy, X-ray diffraction (XRD), and X-ray absorption near-edge structure (XANES). On unheated substrates, by increasing ƒ the growth rate is higher and the O/Cr ratio (x) rises from ∼2 up to ∼2.5. Inversely, by increasing T{sub s} the atomic incorporation rate drops and x falls to ∼1.8. XRD shows that samples grown on unheated substrates are amorphous and that nanocrystalline Cr{sub 2}O{sub 3} (x = 1.5) is formed by increasing T{sub s}. In amorphous CrO{sub x}, XANES reveals the presence of multiple Cr environments that indicate the growth of mixed-valence oxides, with progressive promotion of hexavalent states with ƒ. XANES data also confirms the formation of single-phase nanocrystalline Cr{sub 2}O{sub 3} at elevated T{sub s}. These structural changes also reflect on the optical and morphological properties of the films. - Highlights: • XANES of CrO{sub x} thin films grown by pulsed-DC reactive magnetron sputtering. • Identification of mixed-valence amorphous CrO{sub x} oxides on unheated substrates. • Promotion of amorphous chromic acid (Cr{sup VI}) by increasing O{sub 2} partial pressure. • Production of single-phase Cr{sub 2}O{sub 3} films by increasing substrate temperature. • Correlation of bonding structure with morphological and optical properties.

  5. Electrical and optical properties of VO2 thin films grown on various sapphire substrates by using RF sputtering deposition

    Science.gov (United States)

    Jung, Dae Ho; So, Hyeon Seob; Ko, Kun Hee; Park, Jun Woo; Lee, Hosun; Nguyen, Trang Thi Thu; Yoon, Seokhyun

    2016-12-01

    VO2 thin films were grown on a-, c-, m-, and r-plane sapphire and SiO2/Si substrates under identical conditions by using RF sputtering deposition from a VO2 target. The structural and the morphological properties of all VO2 films were investigated. The grain sizes of the VO2 films varied between 268 nm and 355 nm depending on the substrate's orientation. The electrical and the optical properties of all VO2 thin films were examined in detail. The metal-insulator transition temperature (TMI) varied with the substrate's orientation. The (200)/(bar 211 )-oriented VO2 films on the a-plane sapphire showed the lowest TMI of about 329.3 K (56.3 °C) while the (020)/(002)-VO2 films on the c-plane sapphire displayed the highest TMI of about 339.6 K (66.6 °C). The VO2 films showed reversible changes in the resistivity as large as 1.19 × 105 and a hysteresis of 2 K upon traversing the transition temperature. The variations observed in the TMI with respect to the substrate's orientation were due to changes in the lattice strain and the grain size distribution. Raman spectroscopy showed that metal (rutile) - insulator (monoclinic) transitions occurred via the M2 phase for VO2 films on the c-plane substrate rather than the direct M1 to rutile transition. The shifts in the phonon frequencies of the VO2 film grown on various sapphire substrates were explained in terms of the strain along the V-V atomic bond direction (cR). Our work shows a possible correlation between the transition parameters ( e.g., TMI, sharpness, and hysteresis width) and the width ( σ) of the grain size distribution. It also shows a possible correlation between the TMI and the resistivities at the insulating and the metallic phases for VO2 films grown on various sapphire substrates.

  6. Effects of Annealing Ambient on the Characteristics of LaAlO3 Films Grown by Atomic Layer Deposition

    Science.gov (United States)

    Zhao, Lu; Liu, Hong-xia; Wang, Xing; Fei, Chen-xi; Feng, Xing-yao; Wang, Yong-te

    2017-02-01

    We investigated the effects of different annealing ambients on the physical and electrical properties of LaAlO3 films grown by atomic layer deposition. Post-grown rapid thermal annealing (RTA) was carried out at 600 °C for 1 min in vacuum, N2, and O2, respectively. It was found that the chemical bonding states at the interfacial layers (ILs) between LaAlO3 films and Si substrate were affected by the different annealing ambients. The formation of IL was enhanced during the RTA process, resulting in the decrease of accumulation capacitance, especially in O2 ambient. Furthermore, based on the capacitance-voltage characteristics of LaAlO3/Si MIS capacitors, positive V FB shifting tendency could be observed, indicating the decrease of positive oxide charges. Meanwhile, both trapped charge density and interface trap density showed decreased trends after annealing treatments. In addition, RTA process in various gaseous ambients can reduce the gate leakage current due to the enhancement of valence band offset and the reduction of defects in the LaAlO3/Si structure in varying degrees.

  7. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11%

    Science.gov (United States)

    Hart, John; Adam, Thomas; Kim, Yihwan; Huang, Yi-Chiau; Reznicek, Alexander; Hazbun, Ramsey; Gupta, Jay; Kolodzey, James

    2016-03-01

    Pseudomorphic GeSn layers with Sn atomic percentages between 4.5% and 11.3% were grown by chemical vapor deposition using digermane and SnCl4 precursors on Ge virtual substrates grown on Si. The layers were characterized by x-ray diffraction rocking curves and reciprocal space maps. Photoconductive devices were fabricated, and the dark current was found to increase with Sn concentration. The responsivity of the photoconductors was measured at a wavelength of 1.55 μm using calibrated laser illumination at room temperature and a maximum value of 2.7 mA/W was measured for a 4.5% Sn device. Moreover, the responsivity for higher Sn concentration was found to increase with decreasing temperature. Spectral photoconductivity was measured using Fourier transform infrared spectroscopy. The photoconductive absorption edge continually increased in wavelength with increasing tin percentage, out to approximately 2.4 μm for an 11.3% Sn device. The direct band gap was extracted using Tauc plots and was fit to a bandgap model accounting for layer strain and Sn concentration. This direct bandgap was attributed to absorption from the heavy-hole band to the conduction band. Higher energy absorption was also observed, which was thought to be likely from absorption in the light-hole band. The band gaps for these alloys were plotted as a function of temperature. These experiments show the promise of GeSn alloys for CMOS compatible short wave infrared detectors.

  8. Unpredicted surface termination of α-Fe2O3(0001) film grown by mist chemical vapor deposition

    Science.gov (United States)

    Osaka, Shun; Kubo, Osamu; Takahashi, Kazuki; Oda, Masaya; Kaneko, Kentaro; Tabata, Hiroshi; Fujita, Shizuo; Katayama, Mitsuhiro

    2017-06-01

    We analyze the surface structure of an α-Fe2O3(0001) film grown on a c-plane sapphire substrate by mist chemical vapor deposition (CVD), which has been recently developed as a simple, safe, and cost-effective film growth method. Using coaxial impact-collision ion scattering spectroscopy, we found that the atomic-layer sequence of the surface termination of an α-Fe2O3(0001) film grown by mist CVD was Fe-O3-Fe- from the top layer. This surface termination is predicted to form in an oxygen-poor environment by density functional theory combined with a thermodynamical approach despite that the mist CVD process is performed with atmospheric-pressure air. The surface structure markedly changes after annealing above 600 °C in ultrahigh vacuum. We found that only a couple of layers from the top layer transform into Fe3O4(111) after 650 °C annealing, which would be so-called biphase reconstruction. Complete transformation into a Fe3O4(111) film occurs at 700 °C, whose atomic-layer sequence is determined to be Fe-O4-Fe3- from the top layer.

  9. Physical properties characterization of WO{sub 3} films grown by hot-filament metal oxide deposition

    Energy Technology Data Exchange (ETDEWEB)

    Diaz-Reyes, J., E-mail: jdiazr2001@yahoo.com [Centro de Investigacion en Biotecnologia Aplicada del Instituto Politecnico Nacional, Ex-Hacienda de San Juan Molino, Km. 1.5, Tepetitla, Tlaxcala, 90700 (Mexico); Delgado-Macuil, R.J. [Centro de Investigacion en Biotecnologia Aplicada del Instituto Politecnico Nacional, Ex-Hacienda de San Juan Molino, Km. 1.5, Tepetitla, Tlaxcala, 90700 (Mexico); Dorantes-Garcia, V. [Preparatoria ' Simon Bolivar' de la Benemerita Universidad Autonoma de Puebla, 4 Oriente 408, Col. Centro, Atlixco, Puebla, C. P. 74200 (Mexico); Perez-Benitez, A. [Facultad de Ciencias Quimicas de la Benemerita Universidad Autonoma Puebla, 14 Sur y Av. San Claudio, Col. San Manuel, Puebla, Puebla, C. P. 72570 (Mexico); Balderas-Lopez, J.A. [Unidad Profesional Interdisciplinaria de Biotecnologia del Instituto Politecnico Nacional, Avenida Acueducto S/N, Col. Barrio la Laguna, Ticoman, Del. Gustavo A. Madero, Mexico, D.F. 07340 (Mexico); Ariza-Ortega, J.A. [Centro de Investigacion en Biotecnologia Aplicada del Instituto Politecnico Nacional, Ex-Hacienda de San Juan Molino, Km. 1.5, Tepetitla, Tlaxcala, 90700 (Mexico)

    2010-10-25

    WO{sub 3} is grown by hot-filament metal oxide deposition (HFMOD) technique under atmospheric pressure and an oxygen atmosphere. By X-ray diffraction obtains that WO{sub 3} presents mainly monoclinic crystalline phase. The chemical stoichiometry is obtained by X-ray Photoelectron Spectroscopy (XPS). The IR spectrum of the as-grown WO{sub 3} presents broad peaks in the range of 1100 to 3600 cm{sup -1}. A broad band in the 2200 to 3600 cm{sup -1} region and the peaks sited at 1645 and 1432 cm{sup -1} are well resolved, which are originated from moisture and are assigned to {nu}(OH) and {delta}(OH) modes of adsorbed water and the corresponding tungsten oxide vibrations are in infrared region from 400 to 1453 cm{sup -1} and around 3492 cm{sup -1}, which correspond to tungsten-oxygen (W-O) stretching, bending and lattice modes. The Raman spectrum shows intense peaks at 801, 710, 262 and 61 cm{sup -1} that are typical Raman peaks of crystalline WO{sub 3} (m-phase) that correspond to stretching vibrations of the bridging oxygen, which are assigned to W-O stretching ({nu}) and W-O bending ({delta}) modes, respectively. By transmittance measurements obtains that the WO{sub 3} band gap can be varied from 2.92 to 3.13 eV in the investigated annealing temperature range.

  10. Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Gačević, Ž., E-mail: gacevic@isom.upm.es; Calleja, E. [Universidad Politécnica de Madrid, Avda. Complutense s/n, 28040 Madrid (Spain); Rossbach, G.; Butté, R.; Glauser, M.; Levrat, J.; Cosendey, G.; Carlin, J.-F.; Grandjean, N. [Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Réveret, F. [Institut Pascal, UMR 6602 UBP/CNRS, Clermont Université, 24 Avenue des Landais, F-63177 Aubière Cedex (France)

    2013-12-21

    A 3λ/2 (In,Ga)N/GaN resonant cavity, designed for ∼415 nm operation, is grown by molecular beam epitaxy and is sandwiched between a 39.5-period (In,Al)N/GaN distributed Bragg reflector (DBR), grown on c-plane GaN-on-sapphire pseudo-substrate by metal-organic vapor phase epitaxy and an 8-period SiO{sub 2}/ZrO{sub 2} DBR, deposited by electron beam evaporation. Optical characterization reveals an improvement in the cavity emission spectral purity of approximately one order of magnitude due to resonance effects. The combination of spectrophotometric and micro-reflectivity measurements confirms the strong quality (Q)-factor dependence on the excitation spot size. We derive simple analytical formulas to estimate leak and residual absorption losses and propose a simple approach to model the Q-factor and to give a quantitative estimation of the weight of cavity disorder. The model is in good agreement with both transfer-matrix simulation and the experimental findings. We point out that the realization of high Q-factor (In,Ga)N containing microcavities on GaN pseudo-substrates is likely to be limited by the cavity disorder.

  11. Effects of growth temperature on the properties of atomic layer deposition grown ZrO2 films

    Science.gov (United States)

    Scarel, G.; Ferrari, S.; Spiga, S.; Wiemer, C.; Tallarida, G.; Fanciulli, M.

    2003-07-01

    Zirconium dioxide films are grown in 200 atomic layer deposition cycles. Zirconium tetrachloride (ZrCl4) and water (H2O) are used as precursors. A relatively high dielectric constant (κ=22), wide band gap, and conduction band offset (5.8 and 1.4 eV, respectively) indicate that zirconium dioxide is a most promising substitute for silicon dioxide as a dielectric gate in complementary metal-oxide-semiconductor devices. However, crystallization and chlorine ions in the films might affect their electrical properties. These ions are produced during atomic layer deposition in which the ZrCl4 precursor reacts with the growth surface. It is desirable to tune the composition, morphology, and structural properties in order to improve their benefit on the electrical ones. To address this issue it is necessary to properly choose the growth parameters. This work focuses on the effects of the growth temperature Tg. ZrO2 films are grown at different substrate temperatures: 160, 200, 250, and 350 °C. Relevant modification of the film structure with a change in substrate temperature during growth is expected because the density of reactive sites [mainly Si+1-(OH)-1 bonds] decreases with an increase in temperature [Y. B. Kim et al., Electrochem. Solid-State Lett. 3, 346 (2000)]. The amorphous film component, for example, that develops at Si+1-(OH)-1 sites on the starting growth surface, is expected to decrease with an increase in growth temperature. The size and consequences of film property modifications with the growth temperature are investigated in this work using x-ray diffraction and reflectivity, and atomic force microscopy. Time of flight-secondary ion mass spectrometry is used to study contaminant species in the films. From capacitance-voltage (CV) and current-voltage (IV) measurements, respectively, the dielectric constant κZrO2 and the leakage current are studied as a function of the film growth temperature.

  12. Stability increase of fuel clad with zirconium oxynitride thin film by metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jee, Seung Hyun [Department of Materials Science and Engineering, Yonsei University, 134 Sinchon Dong, Seoul 120-749 (Korea, Republic of); Materials Research and Education Center, Dept. of Mechanical Engineering, Auburn University, 275 Wilmore Labs, AL 36849-5341 (United States); Kim, Jun Hwan; Baek, Jong Hyuk [Recycled Fuel Development Division, Korea Atomic Energy Research Institute, P.O. Box 105, Yuseong, Daejeon, 305-600 (Korea, Republic of); Kim, Dong-Joo [Materials Research and Education Center, Dept. of Mechanical Engineering, Auburn University, 275 Wilmore Labs, AL 36849-5341 (United States); Kang, Seong Sik [Regulatory Research Division, Korea Institute of Nuclear Safety, 19, Guseong-Dong, Yuseong-Gu, Daejeon, 305-338 (Korea, Republic of); Yoon, Young Soo, E-mail: yoonys@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, 134 Sinchon Dong, Seoul 120-749 (Korea, Republic of)

    2012-06-01

    A zirconium oxynitride (ZON) thin film was deposited onto HT9 steel as a cladding material by a metalorganic chemical vapor deposition (MOCVD) in order to prevent a fuel-clad chemical interaction (FCCI) between a U-10 wt% Zr metal fuel and a clad material. X-ray diffraction spectrums indicated that the mixture of structures of zirconium nitride, oxide and carbide in the MOCVD grown ZON thin films. Also, typical equiaxial grain structures were found in plane and cross sectional images of the as-deposited ZON thin films with a thickness range of 250-500 nm. A depth profile using auger electron microscopy revealed that carbon and oxygen atoms were decreased in the ZON thin film deposited with hydrogen gas flow. Diffusion couple tests at 800 Degree-Sign C for 25 hours showed that the as-deposited ZON thin films had low carbon and oxygen content, confirmed by the Energy Dispersive X-ray Spectroscopy, which showed a barrier behavior for FCCI between the metal fuel and the clad. This result suggested that ZON thin film cladding by MOCVD, even with the thickness below the micro-meter level, has a high possibility as an effective FCCI barrier. - Highlights: Black-Right-Pointing-Pointer Zirconium oxynitride (ZON) deposited by metal organic chemical vapor deposition. Black-Right-Pointing-Pointer Prevention of fuel cladding chemical interaction (FCCI) investigated. Black-Right-Pointing-Pointer Interfusion reduced by between metal fuel (U-10 wt% Zr) and a HT9 cladding material. Black-Right-Pointing-Pointer Hydrogenation of the ZON during growth improved the FCCI barrier performance.

  13. Quantum size effects in TiO2 thin films grown by atomic layer deposition.

    Science.gov (United States)

    Tallarida, Massimo; Das, Chittaranjan; Schmeisser, Dieter

    2014-01-01

    We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems.

  14. Quantum size effects in TiO2 thin films grown by atomic layer deposition

    OpenAIRE

    Tallarida, Massimo; Das, Chittaranjan; Schmeisser, Dieter

    2014-01-01

    We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier...

  15. A Simple Route of Morphology Control and Structural and Optical Properties of ZnO Grown by Metal-Organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    FAN Hai-Bo; YANG Shao-Yan; ZHANG Pan-Feng; WEI Hong-Yuan; LIU Xiang-Lin; JIAO Chun-Mei; ZHU Qin-Sheng; CHEN Yong-Hai; WANG Zhan-Guo

    2008-01-01

    @@ Employing the metal-organic chemical vapour deposition (MOCVD) technique, we prepare ZnO samples with different morphologies from the film to nanorods through conveniently changing the bubbled diethylzinc flux (BDF) and the carrier gas flux of oxygen (OCGF). The scanning electron microscope images indicate that small BDF and OCGF induce two-dimensional growth while the large ones avail quasi-one-dimensional growth. X-ray diffraction (XRD) and Raman scattering analyses show that all of the morphology-dependent ZnO samples are of high crystal quality with a c-axis orientation. From the precise shifts of the 20 locations of ZnO (002) face in the XRD patterns and the E2 (high) locations in the Raman spectra, we deduce that the compressive stress forms in the ZnO samples and is strengthened with the increasing BDF and OCGF. Photoluminescence spectroscopyresults show all the samples have a sharp ultraviolet luminescent band without any defects-related emission.Upon the experiments a possible growth mechanism is proposed.

  16. Effects of growth temperature on the properties of InGaN channel heterostructures grown by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yachao; Zhou, Xiaowei; Xu, Shengrui; Wang, Zhizhe; Chen, Zhibin; Zhang, Jinfeng; Zhang, Jincheng, E-mail: jchzhang@xidian.edu.cn, E-mail: xd-zhangyachao@163.com; Hao, Yue, E-mail: jchzhang@xidian.edu.cn, E-mail: xd-zhangyachao@163.com [School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi’an, China 710071 (China); Key Laboratory of Wide Band Gap Semiconductor Materials and Devices (China)

    2015-12-15

    Pulsed metal organic chemical vapor deposition (P-MOCVD) is introduced into the growth of high quality InGaN channel heterostructures. The effects of InGaN channel growth temperature on the structural and transport properties of the heterostructures are investigated in detail. High resolution x-ray diffraction (HRXRD) and Photoluminescence (PL) spectra indicate that the quality of InGaN channel strongly depends on the growth temperature. Meanwhile, the atomic force microscopy (AFM) results show that the interface morphology between the InGaN channel and the barrier layer also relies on the growth temperature. Since the variation of material properties of InGaN channel has a significant influence on the electrical properties of InAlN/InGaN heterostructures, the optimal transport properties can be achieved by adjusting the growth temperature. A very high two dimension electron gas (2DEG) density of 1.92 × 10{sup 13} cm{sup −2} and Hall electron mobility of 1025 cm{sup 2}/(V⋅s) at room temperature are obtained at the optimal growth temperature around 740 °C. The excellent transport properties in our work indicate that the heterostructure with InGaN channel is a promising candidate for the microwave power devices, and the results in this paper will be instructive for further study of the InGaN channel heterostructures.

  17. Germanium nanoparticles grown at different deposition times for memory device applications

    Energy Technology Data Exchange (ETDEWEB)

    Mederos, M., E-mail: melissa.mederos@gmail.com [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); Mestanza, S.N.M. [Federal University of ABC (UFABC), Rua Santa Adélia 166, Bangu, Santo André, CEP: 09210-170, São Paulo (Brazil); Lang, R. [Institute of Science and Technology, Federal University of São Paulo (UNIFESP), Rua Talim, 330, São José dos Campos, CEP: 12231-280, São Paulo (Brazil); Doi, I.; Diniz, J.A. [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); School of Electrical and Computer Engineering, University of Campinas (Unicamp), Av. Albert Einstein 400, Campinas, CEP: 13083-852, São Paulo (Brazil)

    2016-07-29

    In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

  18. Random lasing of ZnO thin films grown by pulsed-laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cachoncinlle, C., E-mail: christophe.cachoncinlle@univ-orleans.fr [GREMI, UMR 7344 CNRS—Université Orléans, 45067 Orléans Cedex 2 (France); Hebert, C.; Perrière, J. [Sorbonne Universités, UPMC Université Paris 06, UMR 7588, INSP, 75005 Paris (France); CNRS, UMR 7588, INSP, 75005 Paris (France); Nistor, M. [NILPRP, L 22 PO Box. MG-36, 77125 Bucharest—Magurele (Romania); Petit, A.; Millon, E. [GREMI, UMR 7344 CNRS—Université Orléans, 45067 Orléans Cedex 2 (France)

    2015-05-01

    Highlights: • Random lasing at RT in nanocrystalline ZnO PLD thin film (<100 nm). • Low optical pumping threshold (<30 kW cm{sup −2}) for UV random lasing. • Random lasing interpreted by the electron-hole plasma (EHP) model. - Abstract: Low-dimensional semiconductor structures on nanometer scale are of great interest because of their strong potential applications in nanotechnologies. We report here optical and structural properties on UV lasing in ZnO thin films. The ZnO films, 110 nm thick, were prepared using pulsed-laser deposition on c-cut sapphire substrates at 500 °C under 10{sup −2} oxygen pressure. The ZnO films are nearly stoichiometric, dense and display the wurtzite phase. The films are highly textured along the ZnO c-axis and are constituted of nanocrystallites. According to Hall measurements these films are conductive (0.11 Ω cm). Photoluminescence measurements reveals a so-called random lasing in the range 390 to 410 nm, when illuminating at 355 nm with a tripled frequency pulsed Nd-YAG laser. Such random lasing is obtained at rather low optical pumping, 45 kW cm{sup −2}, a value lower than those classically reported for pulsed-laser deposition thin films.

  19. Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Santra, T. S.; Liu, C. H.; Bhattacharyya, T. K.; Patel, P.; Barik, T. K.

    2010-06-01

    Diamond-like nanocomposite (DLN) thin films, comprising the networks of a-C:H and a-Si:O were deposited on pyrex glass or silicon substrate using gas precursors (e.g., hexamethyldisilane, hexamethyldisiloxane, hexamethyldisilazane, or their different combinations) mixed with argon gas, by plasma enhanced chemical vapor deposition technique. Surface morphology of DLN films was analyzed by atomic force microscopy. High-resolution transmission electron microscopic result shows that the films contain nanoparticles within the amorphous structure. Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) were used to determine the structural change within the DLN films. The hardness and friction coefficient of the films were measured by nanoindentation and scratch test techniques, respectively. FTIR and XPS studies show the presence of CC, CH, SiC, and SiH bonds in the a-C:H and a-Si:O networks. Using Raman spectroscopy, we also found that the hardness of the DLN films varies with the intensity ratio ID/IG. Finally, we observed that the DLN films has a better performance compared to DLC, when it comes to properties like high hardness, high modulus of elasticity, low surface roughness and low friction coefficient. These characteristics are the critical components in microelectromechanical systems (MEMS) and emerging nanoelectromechanical systems (NEMS).

  20. Micrometric rods grown by nanosecond pulsed laser deposition of boron carbide

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Quintas, Ignacio; Oujja, Mohamed; Sanz, Mikel; Benitez-Cañete, Antonio [Instituto de Química Física Rocasolano, CSIC, Serrano 119, 28006 Madrid (Spain); Chater, Richard J. [Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Cañamares, Maria Vega [Instituto de Estructura de la Materia, CSIC, Serrano 119, 28006 Madrid (Spain); Marco, José F. [Instituto de Química Física Rocasolano, CSIC, Serrano 119, 28006 Madrid (Spain); Castillejo, Marta, E-mail: marta.castllejo@iqfr.csic.es [Instituto de Química Física Rocasolano, CSIC, Serrano 119, 28006 Madrid (Spain)

    2015-02-15

    Highlights: • Micrometric rods obtained by ns pulsed laser deposition of boron carbide at 1064 and 266 nm. • At 1064 nm microrods display crystalline polyhedral shape with sharp edges and flat sides. • Microrods consist of a mixture of boron, boron oxide, boron carbide and aliphatic hydrocarbons. - Abstract: Micrometric size rods have been fabricated via pulsed laser deposition in vacuum from boron carbide targets using nanosecond pulses of 1064 and 266 nm and room temperature Si (1 0 0) substrates. Morphological, structural and chemical characterization of the microrods was made by applying scanning electron microscopy, focussed ion beam microscopy coupled to secondary ion mass spectrometry, X-ray diffraction, X-ray photoelectron spectroscopy and micro-Raman spectroscopy. Ablation at 1064 nm favours the formation of microrods with high aspect ratio, sharp edges and pyramidal tips, typically 10 μm long with a cross section of around 2 μm × 2 μm. Differently, at 266 nm the microrods are of smaller size and present a more globular aspect. The analyses of the microrods provide information about their crystalline nature and composition, based on a mixture which includes boron, boron oxide and boron carbide, and allows discussion of the wavelength dependent growth mechanisms involved.

  1. Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO{sub 2} grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Gang; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong [Novitas, Nanoelectronics Center of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Wang, Hong, E-mail: ewanghong@ntu.edu.sg [Novitas, Nanoelectronics Center of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); CINTRA CNRS/NTU/Thales, UMI 3288, 50 Nanyang Drive (Singapore); Ng, Serene Lay Geok; Ji, Rong [Data Storage Institute, Agency for Science Technology and Research (A-STAR), 5 Engineering Drive 1, 117608 (Singapore); Liu, Zhi Hong [Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore)

    2015-03-02

    The effect of post-deposition annealing on chemical bonding states at interface between Al{sub 0.5}Ga{sub 0.5}N and ZrO{sub 2} grown by atomic layer deposition (ALD) is studied by angle-resolved x-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that both of Al-O/Al 2p and Ga-O/Ga 3d area ratio decrease at annealing temperatures lower than 500 °C, which could be attributed to “clean up” effect of ALD-ZrO{sub 2} on AlGaN. Compared to Ga spectra, a much larger decrease in Al-O/Al 2p ratio at a smaller take-off angle θ is observed, which indicates higher effectiveness of the passivation of Al-O bond than Ga-O bond through “clean up” effect near the interface. However, degradation of ZrO{sub 2}/AlGaN interface quality due to re-oxidation at higher annealing temperature (>500 °C) is also found. The XPS spectra clearly reveal that Al atoms at ZrO{sub 2}/AlGaN interface are easier to get oxidized as compared with Ga atoms.

  2. The effect of deposition parameters on the phase of TiO{sub 2} films grown by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Ji Chon; Song, Kyu Jeong [Chonbuk National University, Jeonju (Korea, Republic of); Park, Chan [Seoul National University, Seoul (Korea, Republic of)

    2014-12-15

    TiO{sub 2} thin films were deposited on Si substrates by using conventional radio-frequency (RF) magnetron sputtering with either metallic Ti or TiO{sub 2} targets, and the effect of the deposition parameters (substrate temperature (T{sub s}), RF sputtering power, gas flow ratio of O{sub 2}/(Ar+O{sub 2}) and deposition time) on the phase of the film was investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to obtain information on the phase of the films and on the surface image/thickness of films, respectively. TiO{sub 2} films deposited at a T{sub s} higher than 300 .deg. C by using a metallic Ti target showed the dominant presence of the rutile phase. For films grown at a constant T{sub s} of 300 .deg. C with different gas flow ratios of O{sub 2}/(Ar+O{sub 2}), the amount of the rutile phase gradually decreased as the oxygen gas flow was decreased. The anatase phase, however, was formed when the O{sub 2}/(Ar+O{sub 2}) was 0.2. On the other hand, for TiO{sub 2} films deposited at T{sub s}'s between 50 .deg. C and 200 .deg. C with an O{sub 2}/(Ar+O{sub 2}) of 0.1 by using a TiO{sub 2} target, both the anatase and the rutile phases gradually decreased as the T{sub s} was increased. For TiO{sub 2} films deposited with various gas flow ratios of O{sub 2}/(Ar+O{sub 2}) between 0 and 0.4 at a constant T{sub s} of 200 .deg. C by using a TiO{sub 2} target, the anatase phase gradually decreased, but the rutile phase gradually increased, as the gas flow ratio was increased.

  3. Glutamate biosensor based on carbon nanowalls grown using plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Tomatsu, Masakazu; Hiramatsu, Mineo; Kondo, Hiroki; Hori, Masaru

    2015-09-01

    Carbon nanowalls (CNWs) are composed of few-layer graphene standing almost vertically on the substrate. Due to the large surface area of vertical nanographene network, CNWs draw attention as platform for electrochemical sensing, biosensing and energy conversion applications. In this work, CNWs were grown on nickel substrate using inductively coupled plasma with methane/Ar mixture. After the CNW growth, the surface of CNWs was oxidized using Ar atmospheric pressure plasma to obtain super-hydrophilic surface. For the biosensing application, the surface of CNWs was decorated with platinum (Pt) nanoparticles by the reduction of hydrogen hexachloroplatinate (IV) solution. The resultant Pt particle size was estimated to be 3-4 nm. From the XPS analysis, pure Pt existed without being oxidized on the CNW surface. Electrochemical surface area of the Pt catalyst was evaluated by cyclic voltammetry. Pt-decorated CNWs will be used as an electrode for electrochemical glutamate biosensing. L-glutamate is one of the most important in the mammalian central nervous system, playing a vital role in many physiological processes. Nanoplatform based on vertical nanographene offers great promise for providing a new class of nanostructured electrodes for electrochemical sensing.

  4. Design of a three-layer hot-wall horizontal flow MOCVD reactor

    Institute of Scientific and Technical Information of China (English)

    Gu Chengyan; Lee Chengming; Liu Xianglin

    2012-01-01

    A new three-layer hot-wall horizontal flow metal-organic chemical vapor deposition (MOCVD) reactor is proposed.When the susceptor is heated,the temperature of the wall over the susceptor also increases to the same temperature.Furthermore,the flowing speed of the top layer is also increased by up to four times that of the bottom layer.Both methods effectively decrease the convection and make most of the metal organic (MO) gas and the reactive gas distribute at the bottom surface of the reactor.By selecting appropriate shapes,sizes,nozzles array,and heating area of the walls,the source gases are kept in a laminar flow state.Results of the numeric simulation indicate that the nitrogen is a good carrier to reduce the diffusion among the precursors before arriving at the substrate,which leads to the reduction of pre-reaction.To get a good comparison with the conventional MOCVD horizontal reactor,the two-layer horizontal MOCVD reactor is also investigated.The results indicate that a twolayer reactor cannot control the gas flow effectively when its size and shape are the same as that of the three-layer reactor,so that the concentration distributions of the source gases in the susceptor surface are much more uniform in the new design than those in the conventional one.

  5. Quantum size effects in TiO2 thin films grown by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Massimo Tallarida

    2014-01-01

    Full Text Available We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier transport and separation, and increase the efficiency of energy conversion systems.

  6. Layer-dependent supercapacitance of graphene films grown by chemical vapor deposition on nickel foam

    KAUST Repository

    Chen, Wei

    2013-03-01

    High-quality, large-area graphene films with few layers are synthesized on commercial nickel foams under optimal chemical vapor deposition conditions. The number of graphene layers is adjusted by varying the rate of the cooling process. It is found that the capacitive properties of graphene films are related to the number of graphene layers. Owing to the close attachment of graphene films on the nickel substrate and the low charge-transfer resistance, the specific capacitance of thinner graphene films is almost twice that of the thicker ones and remains stable up to 1000 cycles. These results illustrate the potential for developing high-performance graphene-based electrical energy storage devices. © 2012 Elsevier B.V. All rights reserved.

  7. Electrical characterization of gadolinia doped ceria films grown by pulsed laser deposition

    DEFF Research Database (Denmark)

    Rodrigo, Katarzyna Agnieszka; Heiroth, Sebastian; Lundberg, Mats

    2010-01-01

    Electrical characterization of 10 mol% gadolinia doped ceria (CGO10) films of different thicknesses prepared on MgO(100) substrates by pulsed laser deposition is presented. Dense, polycrystalline and textured films characterized by fine grains (grain sizes ... thickness. The conductivity of the nanocrystalline films is lower (7.0×10−4 S/cm for the 20-nm film and 3.6×10−3 S/cm for the 435-nm film, both at 500°C) than that of microcrystalline, bulk samples ( S/cm at 500°C). The activation energy for the conduction is found to be 0.83 eV for the bulk material, while...

  8. High Resistive ZnO/Diamond/Si Films Grown via Metal-organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    YANG Hong-jun; ZHAO Bai-jun; FANG Xiu-jun; DU Guo-tong; LIU Da-li; GAO Chun-xiao; LIU Xi-zhe

    2005-01-01

    Piezoelectric ZnO layers with high resistivity for surface acoustic wave applications were prepared on polycrystalline diamond/Si substrates with (111) orientation via metal-organic chemical vapour deposition.The characteristics of the films were optimized through different growth methods. The comparative study of the X-ray diffraction spectra and scanning electron microscopic images showed that the final-prepared ZnO films were dominantly c-axis oriented. Zn and O elements in the final prepared ZnO films were investigated through X-ray photoelectron spectroscopy. According to the statistical results, the n(Zn)/n(O) ratio is near 1. The Raman scattering was also performed in back scattering configuration. E2 mode was observed for the final films, which indicated that the better quality ZnO films had been obtained. The resistivity of the films was also enhanced via the modification of the growth methods.

  9. Formation and physical properties of YBCO thick films grown by using the electrophoretic deposition method

    CERN Document Server

    Kim, U J; Kim, Y C; Han, S K; Kang, K Y

    1999-01-01

    Thick films of the YBa sub 2 Cu sub 3 O subgamma sub - subdelta (YBCO) superconductor were prepared by using the electrophoretic deposition technique and a flexible wire as the substrate. The transition temperature of the wires was 91 K, the intragranular magnetic critical current density J sub c sub g sup m sup a sup g was about 10 sup 5 A/cm sup 2 at 77 K in a weak field, and the transport J sub c sup t sup r sup a sup n sup s was about 365 A/cm sup 2 at 77 K. We calculated the intergranular magnetic critical current J sub c sub J sup m sup a sup g and the activation energy from the AC-susceptibility measurements, and their values were about 444 A/cm sup 2 at 77 K and 2.02 eV, respectively.

  10. High-purity 3D nano-objects grown by focused-electron-beam induced deposition

    Science.gov (United States)

    Córdoba, Rosa; Sharma, Nidhi; Kölling, Sebastian; Koenraad, Paul M.; Koopmans, Bert

    2016-09-01

    To increase the efficiency of current electronics, a specific challenge for the next generation of memory, sensing and logic devices is to find suitable strategies to move from two- to three-dimensional (3D) architectures. However, the creation of real 3D nano-objects is not trivial. Emerging non-conventional nanofabrication tools are required for this purpose. One attractive method is focused-electron-beam induced deposition (FEBID), a direct-write process of 3D nano-objects. Here, we grow 3D iron and cobalt nanopillars by FEBID using diiron nonacarbonyl Fe2(CO)9, and dicobalt octacarbonyl Co2(CO)8, respectively, as starting materials. In addition, we systematically study the composition of these nanopillars at the sub-nanometer scale by atom probe tomography, explicitly mapping the homogeneity of the radial and longitudinal composition distributions. We show a way of fabricating high-purity 3D vertical nanostructures of ˜50 nm in diameter and a few micrometers in length. Our results suggest that the purity of such 3D nanoelements (above 90 at% Fe and above 95 at% Co) is directly linked to their growth regime, in which the selected deposition conditions are crucial for the final quality of the nanostructure. Moreover, we demonstrate that FEBID and the proposed characterization technique not only allow for growth and chemical analysis of single-element structures, but also offers a new way to directly study 3D core-shell architectures. This straightforward concept could establish a promising route to the design of 3D elements for future nano-electronic devices.

  11. Epitaxial LaFeAsO{sub 1-x}F{sub x} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kidszun, M; Haindl, S; Reich, E; Haenisch, J; Iida, K; Schultz, L; Holzapfel, B, E-mail: M.Kidszun@ifw-dresden.d [IFW Dresden, Institute for Metallic Materials, PO Box 270116, D-01171 Dresden (Germany)

    2010-02-15

    Superconducting and epitaxially grown LaFeAsO{sub 1-x}F{sub x} thin films were successfully prepared on (001)-oriented LaAlO{sub 3} substrates using pulsed laser deposition. The prepared thin films show exclusively a single in-plane orientation with the epitaxial relation (001)[100]||(001)[100] and a full width at half-maximum value of 1{sup 0}. Furthermore, resistive measurement of the superconducting transition temperature revealed a T{sub c,90%} of 25 K with a high residual resistive ratio of 6.8. The preparation technique applied, standard thin film pulsed laser deposition at room temperature in combination with a subsequent post-annealing process, is suitable for fabrication of high quality LaFeAsO{sub 1-x}F{sub x} thin films. A high upper critical field of 76.2 T was evaluated for magnetic fields applied perpendicular to the c-axis and the anisotropy was calculated to be 3.3 assuming single band superconductivity. (rapid communication)

  12. Indium tin oxide nanowires grown by one-step thermal evaporation-deposition process at low temperature.

    Science.gov (United States)

    Dong, Haibo; Zhang, Xiaoxian; Niu, Zhiqiang; Zhao, Duan; Li, Jinzhu; Cai, Le; Zhou, Weiya; Xie, Sishen

    2013-02-01

    Indium tin oxide (ITO), as one of the most important transparent conducting oxide, is widely used in electro-optical field. We have developed a simple one-step method to synthesize ITO nanowires at low temperature of 600 degrees C. In detail, mixtures of InN nanowires and SnO powder, with the molar ratio of 10:1, have been used as precursors for the thermal evaporation-deposition of ITO nanowires on silicon/quartz slices. During the growth process, the evaporation temperature is maintained at 600 degrees C, which favors the decomposition of InN and oxidation of In, with a limited incorporation of Sn in the resulting compound (In:Sn approximately 11:1 in atomic ratio). As far as we know, this is the lowest growth temperature reported on the thermal deposition of ITO nanowires. The diameters of the nanowires are about 120 nm and the lengths are up to tens of micrometers. XRD characterization indicates the high crystallization of the nanowires. HRTEM results show the nanowires grow along the [200] direction. The transmittance of the nanowire film on quartz slice is more than 75% in the visible region. Based on photolithography and lift-off techniques, four-terminal measurement was utilized to test the resistivity of individual nanowire (6.11 x 10(-4) omega x cm). The high crystallization quality, good transmittance and low resistivity make as-grown ITO nanowires a promising candidate as transparent electrodes of nanoscale devices.

  13. ZnO/(Hf,Zr)O2/ZnO-trilayered nanowire capacitor structure fabricated solely by metalorganic chemical vapor deposition

    Science.gov (United States)

    Fujisawa, Hironori; Kuwamoto, Kei; Nakashima, Seiji; Shimizu, Masaru

    2016-02-01

    HfO2-based thin films are one of the key dielectric and ferroelectric materials in Si-CMOS LSIs as well as in oxide electronic nanodevices. In this study, we demonstrated the fabrication of a ZnO/(Hf,Zr)O2/ZnO-trilayered nanowire (NW) capacitor structure solely by metalorganic chemical vapor deposition (MOCVD). 15-nm-thick dielectric (Hf,Zr)O2 and 40-nm-thick top ZnO electrode layers were uniformly grown by MOCVD on a ZnO NW template with average diameter, length, and aspect ratio of 110 nm, 10 µm, and ˜90, respectively. The diameter and aspect ratio of the resultant trilayerd NWs are 200-300 nm and above 30, respectively. The crystalline phase of HfO2 and stacked the structure are also discussed.

  14. Nitrogen doping in atomic layer deposition grown titanium dioxide films by using ammonium hydroxide

    Energy Technology Data Exchange (ETDEWEB)

    Kaeaeriaeinen, M.-L., E-mail: marja-leena.kaariainen@lut.fi; Cameron, D.C.

    2012-12-30

    Titanium dioxide films have been created by atomic layer deposition using titanium chloride as the metal source and a solution of ammonium hydroxide in water as oxidant. Ammonium hydroxide has been used as a source of nitrogen for doping and three thickness series have been deposited at 350 Degree-Sign C. A 15 nm anatase dominated film was found to possess the highest photocatalytic activity in all film series. Furthermore almost three times better photocatalytic activity was discovered in the doped series compared to undoped films. The doped films also had lower resistivity. The results from X-ray photoemission spectroscopy showed evidence for interstitial nitrogen in the titanium dioxide structure. Besides, there was a minor red shift observable in the thickest samples. In addition the film conductivity was discovered to increase with the feeding pressure of ammonium hydroxide in the oxidant precursor. This may indicate that nitrogen doping has caused the decrease in the resistivity and therefore has an impact as an enhanced photocatalytic activity. The hot probe test showed that all the anatase or anatase dominant films were p-type and all the rutile dominant films were n-type. The best photocatalytic activity was shown by anatase-dominant films containing a small amount of rutile. It may be that p-n-junctions are formed between p-type anatase and n-type rutile which cause carrier separation and slow down the recombination rate. The combination of nitrogen doping and p-n junction formation results in superior photocatalytic performance. - Highlights: Black-Right-Pointing-Pointer We found all N-doped and undoped anatase dominating films p-type. Black-Right-Pointing-Pointer We found all N-doped and undoped rutile dominating films n-type. Black-Right-Pointing-Pointer We propose that p-n junctions are formed in anatase-rutile mixture films. Black-Right-Pointing-Pointer We found that low level N-doping has increased TiO{sub 2} conductivity. Black

  15. Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection

    KAUST Repository

    Chang, Yung-Huang

    2014-08-26

    Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices. © 2014 American Chemical Society.

  16. Electrical transport properties of graphene nanowalls grown at low temperature using plasma enhanced chemical vapor deposition

    Science.gov (United States)

    Zhao, Rong; Ahktar, Meysam; Alruqi, Adel; Dharmasena, Ruchira; Jasinski, Jacek B.; Thantirige, Rukshan M.; Sumanasekera, Gamini U.

    2017-05-01

    In this work, we report the electrical transport properties of uniform and vertically oriented graphene (graphene nanowalls) directly synthesized on multiple substrates including glass, Si/SiO2 wafers, and copper foils using radio-frequency plasma enhanced chemical vapor deposition (PECVD) with methane (CH4) as the precursor at relatively low temperatures. The temperature for optimum growth was established with the aid of transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy. This approach offers means for low-cost graphene nanowalls growth on an arbitrary substrate with the added advantage of transfer-free device fabrication. The temperature dependence of the electrical transport properties (resistivity and thermopower) were studied in the temperature range, 30-300 K and analyzed with a combination of 2D-variable range hopping (VRH) and thermally activated (TA) conduction mechanisms. An anomalous temperature dependence of the thermopower was observed for all the samples and explained with a combination of a diffusion term having a linear temperature dependence plus a term with an inverse temperature dependence.

  17. Paper supports in electrocatalysis. Weak contact catalysis with seed-mediated grown gold nanoparticle deposits

    Energy Technology Data Exchange (ETDEWEB)

    Oyama, Munetaka; Nakashima, Daisuke [Department of Material Chemistry, Graduate School of Engineering, Kyoto University (Japan); Cummings, Charles Y.; Marken, Frank [Department of Chemistry, University of Bath (United Kingdom)

    2011-01-15

    Paper surfaces (Whatman filter papers, Kimwipes, and Japanese Washi papers) were employed as support for gold nanoparticles (AuNPs) deposited by the seed-mediated growth method. The AuNP-modified paper or textile was brought into 'weak' (or non-permanent) contact with a glassy carbon electrode and immersed into aqueous electrolyte media. Electrochemical responses for the Fe(CN){sub 6}{sup 4-}/Fe(CN){sub 6}{sup 3-} redox system in 0.1 M phosphate buffer (pH 7.0) and 1.0 M KCl solutions were investigated by voltammetry and impedance methods. Even for weakly contacted AuNP catalysts of relatively low density faster electron transfer was observed. Particle sizes of at least 20 nm diameter were required. There was no permanent contact from AuNP catalysts to the electrode and the process was therefore termed 'weak contact catalysis'. The method is proposed as a rapid and novel catalyst screening tool with potential applications in fuel cell and sensor technologies. (author)

  18. Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition

    Science.gov (United States)

    Foronda, Humberto M.; Laurent, Matthew A.; Yonkee, Benjanim; Keller, Stacia; DenBaars, Steven P.; Speck, James S.

    2016-08-01

    Parasitic pre-reactions are known to play a role in the growth of aluminum nitride (AlN) via metal organic chemical vapor deposition, where they can deplete precursor molecules before reaching the substrate, leading to poor growth efficiency. Studies have shown that reducing the growth pressure and growth temperature results in improved growth efficiency of AlN; however, superior crystal quality and reduced impurity incorporation are generally best obtained when growing at high temperatures. This study shows that, with proper alkyl source dilution, parasitic pre-reactions can be suppressed while maintaining high growth temperatures. The results show an 18× increase in growth rate and efficiency of AlN films: from 0.04 μm h-1 to 0.73 μm h-1, and 26 μm mol-1 to 502 μm mol-1, respectively; under constant TMAl flow and a small change in total gas flow. This results in 6.8% of Al atoms from the injected TMAl being utilized for AlN layer growth for this reactor configuration. This is better than the standard GaN growth, where 6.0% of the Ga atoms injected from TMGa are utilized for GaN growth.

  19. Structural and electrical properties of ultrathin niobium nitride films grown by atomic layer deposition

    Science.gov (United States)

    Linzen, S.; Ziegler, M.; Astafiev, O. V.; Schmelz, M.; Hübner, U.; Diegel, M.; Il'ichev, E.; Meyer, H.-G.

    2017-03-01

    We studied and optimised the properties of ultrathin superconducting niobium nitride films fabricated with a plasma-enhanced atomic layer deposition (PEALD) process. By adjusting process parameters, the chemical embedding of undesired oxygen into the films was minimised and a film structure consisting of mainly polycrystalline niobium nitride with a small fraction of amorphous niobium oxide and niobium oxo-nitrides were formed. For this composition a critical temperature of 13.8 K and critical current densities of 7 × 106 A cm-2 at 4.2 K were measured on 40 nm thick films. A fundamental correlation between these superconducting properties and the crystal lattice size of the cubic δ-niobium-nitride grains were found. Moreover, the film thickness variation between 40 and 2 nm exhibits a pronounced change of the electrical conductivity at room temperature and reveals a superconductor-insulator-transition in the vicinity of 3 nm film thickness at low temperatures. The thicker films with resistances up to 5 kΩ per square in the normal state turn to the superconducting one at low temperatures. The perfect thickness control and film homogeneity of the PEALD growth make such films extremely promising candidates for developing novel devices on the coherent quantum phase slip effect.

  20. Cu2O quantum dots emitting visible light grown by atomic layer deposition

    Science.gov (United States)

    Lee, Min Young; Kim, Soo-Hyun; Park, Il-Kyu

    2016-11-01

    This paper reports the fabrication of the Cu2O quantum dots (QDs) emitting a controlled wavelength in the visible spectral range prepared by atomic layer deposition (ALD). Cu2O thin film layers formed on the Al2O3 surface showed large density of islands via Volmer-Weber growth mode, which resulting in QD formation. As the number of ALD cycles was increased from 60 to 480, the spatial density and mean diameter of the Cu2O QDs increased systematically from 4.02 × 1011/cm2 to 2.56×1012/cm2 and from 2.1 to 3.2 nm, respectively. The absorption spectral results indicated that the electron energy transition in the Cu2O QDs was a direct process with the optical band gaps decreasing from 2.71 to 2.15 eV with increasing QD size from 2.1 to 3.2 nm because of the quantum confinement effect. The Cu2O QDs showed broad emission peaks composed of multiple elementary emission spectra corresponding to the Cu2O QD ensembles with a different size distribution. As the size of Cu2O QDs decreased, the shoulder peaks at the higher energy side developed due to the quantum confinement effect.

  1. Structural, morphological and optical characterizations of ZnO:Al thin films grown on silicon substrates by pulsed laser deposition

    Science.gov (United States)

    Alyamani, A.; Sayari, A.; Albadri, A.; Albrithen, H.; El Mir, L.

    2016-09-01

    The pulsed laser deposition (PLD) technique is used to grow Al-doped ZnO (AZO) thin films at 500 ° C on silicon substrates under vacuum or oxygen gas background from ablating AZO nanoparticle targets synthesized via the sol-gel process. The structural, morphological and optical properties were characterized by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM) and spectroscopic ellipsometry (SE) techniques. XRD and TEM images show that AZO powder has a wurtzite-type structure and is composed of small prismatic-like shape nanoparticles with an average size of 30nm. The structural properties of the AZO films grown under oxygen show no significant changes compared to those of the film grown under vacuum. However, the optical properties show a dependence on the growth conditions of the AZO films. Highly c -axis-oriented AZO thin films were obtained with grain size ˜ 15 nm. The stress in the AZO films is tensile as measured from the c -parameter. The dielectric function, the refractive index and the extinction coefficient as a function of the photon energy for the AZO films were determined by using spectroscopic ellipsometry measurements in the photon energy region from 1 to 6eV. The band gap energy was observed to slightly decrease in the presence of the O2 gas background and this may be attributed to the stress. The surface and volume energy loss functions are calculated and exhibit different behaviors in the energy range 1-6eV. Refractive indices of 1.9-2.1 in the visible region were obtained for the AZO films. Also, the electronic carrier concentration appears to be related to the presence of O2 during the growth process.

  2. Superconducting YBa sub 2 Cu sub 3 O sub 7 thin films grown in-situ by ion beam CO-deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kellett, B.K.; James, J.H.; Gauzzi, A.; Dwir, B.; Pavuna, D. (Inst. of Micro and Optoelectronics, Dept. of Physics, Federal Inst. of Tech., Lausanne (Switzerland))

    1989-12-01

    Superconducting YBCO thin films have been grown in-situ by three ion beam co-deposition sputtering. Both metal and oxide targets of Cu and Y and BaF{sub 2} and BaCO{sub 3} targets have been investigated. Film composition was determined by RBS and AES analysis. Films grown using BaF{sub 2} show fluorine contamination, whereas the carbon concentration in films grown using BaCO{sub 3} is beneath the Auger detection limit. Superconducting films have been grown on SrTiO{sub 3} (T{sub co}=78K) and on Si with SiO{sub 2} or Y{sub 2}O{sub 3} buffer layers (T{sub co}=35K). (orig.).

  3. Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Luo, P.Q. [Solar Energy Institute, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)], E-mail: robt@sjtu.edu.cn; Zhou, Z.B. [Solar Energy Institute, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)], E-mail: zbzhou@sjtu.edu.cn; Chan, K.Y. [Thin Film Laboratory, Faculty of Engineering, Multimedia University, Jalan Multimedia, Cyberjaya 63100, Selangor (Malaysia); Tang, D.Y.; Cui, R.Q.; Dou, X.M. [Solar Energy Institute, Department of Physics, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)

    2008-12-30

    Hydrogenated nanocrystalline silicon (nc-Si:H) grown by hot-wire chemical vapor deposition (HWCVD) has recently drawn significant attention in the area of thin-film large area optoelectronics due to possibility of high deposition rate. We report on the effects of diborane (B{sub 2}H{sub 6}) doping ratio on the microstructural and optoelectrical properties of the p-type nc-Si:H thin films grown by HWCVD at low substrate temperature of 200 deg. C and with high hydrogen dilution ratio of 98.8%. An attempt has been made to elucidate the boron doping mechanism of the p-type nc-Si:H thin films deposited by HWCVD and the correlation between the B{sub 2}H{sub 6} doping ratio, crystalline volume fraction, optical band gap and dark conductivity.

  4. Surface Science in an MOCVD Environment: Arsenic on Vicinal Ge(100)

    Energy Technology Data Exchange (ETDEWEB)

    McMahon, W. E.; Olson, J. M.

    1998-11-01

    Scanning tunneling microscope (STM) images of arsine-exposed vicinal Ge(100) surfaces show that most As/Ge steps are reconstructed, and that a variety of different step structures exist. The entire family of reconstructed As/Ge steps can be divided into two types, which we have chosen to call ''single-row'' steps and ''double-row'' steps. In this paper we propose a model for a double-row step created by annealing a vicinal Ge(100) substrate under an arsine flux in a metal-organic chemical vapor deposition (MOCVD) chamber.

  5. Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor

    Institute of Scientific and Technical Information of China (English)

    Li Zhi-Ming; Hao Yue; Zhang Jin-Cheng; Xu Sheng-Rui; Ni JinYu

    2009-01-01

    Electromagnetic field distribution in the vertical metal organic chemical vapour deposition (MOCVD) reactor is simulated by using the finite element method (FEM). The effects of alternating current frequency, intensity, coil turn number and the distance between the coil turns on the distribution of the Joule heat are analysed separately, and their relations to the value of Joule heat are also investigated. The temperature distribution on the suseeptor is also obtained. It is observed that the results of the simulation are in good agreement with previous measurements.

  6. Photodegradative properties of TiO{sub 2} films prepared by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Justicia, I.; Ayllon, J.A.; Figueras, A. [Consejo Superior de Investigaciones Cientificas, Barcelona (Spain). Inst. de Ciencia de Materiales; Battiston, G.A.; Gerbasi, R. [Consejo Superior de Investigaciones Cientificas, Barcelona (Spain). Inst. de Ciencia de Materiales; Ist. di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati del CNR, Padova (Italy)

    2001-08-01

    TiO{sub 2} is a well-known photocatalyst for the air-oxydation of organic compounds. This paper deals with the preparation of TiO{sub 2} layers by MOCVD. The photodegradation rate has been studied in the presence of aqueous suspensions (methylene blue) as a function of the film thickness, roughness and crystallite preferred orientation. These results are compared with aqueous suspensions of Degussa P-25 powders. Deposits obtained on fused quartz showed a higher photodegradation rate than those prepared on glass, while Degussa powders exhibited an intermediate value. (orig.)

  7. Magnetic properties of Sm-Co thin films grown on MgO(100) deposited from a single alloy target

    Energy Technology Data Exchange (ETDEWEB)

    Verhagen, T. G. A.; Boltje, D. B.; Ruitenbeek, J. M. van; Aarts, J., E-mail: aarts@physics.leidenuniv.nl [Huygens-Kamerlingh Onnes Laboratorium, Universiteit Leiden, P.O. Box 9504, 2300 RA Leiden (Netherlands)

    2014-08-07

    We have grown epitaxial Sm-Co thin films by sputter deposition from a single alloy target with a nominal SmCo{sub 5} composition on Cr(100)-buffered MgO(100) single-crystal substrates. By varying the Ar gas pressure, we can change the composition of the film from a SmCo{sub 5}-like to a Sm{sub 2}Co{sub 7}-like phase. The composition, crystal structure, morphology, and magnetic properties of these films have been determined using Rutherford Backscattering, X-ray diffraction, and magnetization measurements. We find that we can grow films with, at room temperature, coercive fields as high as 3.3 T, but with a remanent magnetization which is lower than can be expected from the texturing. This appears to be due to the Sm content of the films, which is higher than expected from the content of the target, even at the lowest possible sputtering pressures. Moreover, we find relatively large variations of film properties using targets of nominally the same composition. At low temperatures, the coercive fields increase, as expected for these hard magnets, but in the magnetization, we observe a strong background signal from the paramagnetic impurities in the MgO substrates.

  8. Magnetic properties of Sm-Co thin films grown on MgO(100) deposited from a single alloy target

    Science.gov (United States)

    Verhagen, T. G. A.; Boltje, D. B.; van Ruitenbeek, J. M.; Aarts, J.

    2014-08-01

    We have grown epitaxial Sm-Co thin films by sputter deposition from a single alloy target with a nominal SmCo5 composition on Cr(100)-buffered MgO(100) single-crystal substrates. By varying the Ar gas pressure, we can change the composition of the film from a SmCo5-like to a Sm2Co7-like phase. The composition, crystal structure, morphology, and magnetic properties of these films have been determined using Rutherford Backscattering, X-ray diffraction, and magnetization measurements. We find that we can grow films with, at room temperature, coercive fields as high as 3.3 T, but with a remanent magnetization which is lower than can be expected from the texturing. This appears to be due to the Sm content of the films, which is higher than expected from the content of the target, even at the lowest possible sputtering pressures. Moreover, we find relatively large variations of film properties using targets of nominally the same composition. At low temperatures, the coercive fields increase, as expected for these hard magnets, but in the magnetization, we observe a strong background signal from the paramagnetic impurities in the MgO substrates.

  9. Temperature-dependent Hall effect studies of ZnO thin films grown by metalorganic chemical vapour deposition

    Science.gov (United States)

    Roro, K. T.; Kassier, G. H.; Dangbegnon, J. K.; Sivaraya, S.; Westraadt, J. E.; Neethling, J. H.; Leitch, A. W. R.; Botha, J. R.

    2008-05-01

    The electrical properties of zinc oxide (ZnO) thin films of various thicknesses (0.3-4.4 µm) grown by metalorganic chemical vapour deposition on glass substrates have been studied by using temperature-dependent Hall-effect (TDH) measurements in the 18-300 K range. The high quality of the layers has been confirmed with x-ray diffraction, transmission electron microscopy, scanning electron microscopy and photoluminescence techniques. TDH measurements indicate the presence of a degenerate layer which significantly influences the low-temperature data. It is found that the measured mobility generally increases with increasing layer thickness, reaching a value of 120 cm2 V-1 s-1 at room temperature for the 4.4 µm thick sample. The lateral grain size of the layers is also found to increase with thickness indicating a clear correlation between the size of the surface grains and the electrical properties of corresponding films. Theoretical fits to the Hall data suggest that the bulk conduction of the layers is dominated by a weakly compensated donor with activation energy in the 33-41 meV range and concentration of the order of 1017 cm-3, as well as a total acceptor concentration of mid-1015 cm-3. Grain boundary scattering is found to be an important limiting factor of the mobility throughout the temperature range considered.

  10. Effects of a Pretreatment on Al-Doped ZnO Thin Films Grown by Atomic Layer Deposition.

    Science.gov (United States)

    Ko, Byoung-Soo; Lee, Sang-Ju; Kim, Dae-Hwan; Hwang, Dae-Kue

    2015-03-01

    In this study, we investigated the electrical, structural, and optical properties of Al-doped ZnO (AZO) thin films approximately 50 nm thick grown by atomic layer deposition (ALD) on glass substrates at 200 °C. An H2O pretreatment was conducted for all AZO samples. The electrical properties of the AZO thin film were improved after the pretreatment process. The Al doping concentrations were controlled by inserting an Al2O3 cycle after every "n" ZnO cycles while varying n from 99 to 16. As the doping concentration increases, the resistivity decreases and the optical band gap increases. When the Al2O3 cycle ratio is 5%, the electrical resistivity showed the lowest value of 4.66 x 10(-3) Ω cm. A carrier concentration of 1.10 x 10(20) cm(-3), and the optical transmittance exceeding 90% were obtained in the visible and near-infrared region. The thin film was strongly textured along the (100) direction in the X-ray diffraction patterns.

  11. Mössbauer and Magnetic Properties of Coherently Mixed Magnetite-Cobalt Ferrite Grown by Infrared Pulsed-Laser Deposition

    Directory of Open Access Journals (Sweden)

    Juan de la Figuera

    2015-12-01

    Full Text Available We have studied the magnetic properties and the composition of cobalt ferrite single crystal films on SrTiO3 : Nb grown by infrared pulsed-laser deposition. Mössbauer spectra have been recorded from both the target used to grow the films and the films themselves. The Mössbauer spectra of the target taken at low temperatures show a strong dependence of the recoil free fraction of the octahedral sites with temperature. The films composition, with a coexistence of Co-enriched cobalt ferrite and magnetite, has been estimated assuming a similar ratio of the recoil free fractions of the films. X-ray absorption and x-ray magnetic circular dichroism measurements confirm the valence composition of the film and show ferromagnetic Fe-Co coupling in the films with a coercive field around 0.5 T at room temperature. The combination of these characterization techniques allows establishing the coherent structural and magnetic properties of this biphase system.

  12. Superconducting properties of very high quality NbN thin films grown by high temperature chemical vapor deposition

    Science.gov (United States)

    Hazra, D.; Tsavdaris, N.; Jebari, S.; Grimm, A.; Blanchet, F.; Mercier, F.; Blanquet, E.; Chapelier, C.; Hofheinz, M.

    2016-10-01

    Niobium nitride (NbN) is widely used in high-frequency superconducting electronics circuits because it has one of the highest superconducting transition temperatures ({T}{{c}}˜ 16.5 {{K}}) and largest gap among conventional superconductors. In its thin-film form, the T c of NbN is very sensitive to growth conditions and it still remains a challenge to grow NbN thin films (below 50 nm) with high T c. Here, we report on the superconducting properties of NbN thin films grown by high-temperature chemical vapor deposition (HTCVD). Transport measurements reveal significantly lower disorder than previously reported, characterized by a Ioffe-Regel parameter ({k}{{F}}{\\ell }) ˜ 12. Accordingly we observe {T}{{c}}˜ 17.06 {{K}} (point of 50% of normal state resistance), the highest value reported so far for films of thickness 50 nm or less, indicating that HTCVD could be particularly useful for growing high quality NbN thin films.

  13. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sokolov, N. S., E-mail: nsokolov@fl.ioffe.ru; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); Maksimova, K. Yu.; Grunin, A. I. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Tabuchi, M. [Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8603 (Japan)

    2016-01-14

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y{sub 3}Fe{sub 5}O{sub 12} (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

  14. Enhancement of the electrical properties of graphene grown by chemical vapor deposition via controlling the effects of polymer residue.

    Science.gov (United States)

    Suk, Ji Won; Lee, Wi Hyoung; Lee, Jongho; Chou, Harry; Piner, Richard D; Hao, Yufeng; Akinwande, Deji; Ruoff, Rodney S

    2013-04-10

    Residual polymer (here, poly(methyl methacrylate), PMMA) left on graphene from transfer from metals or device fabrication processes affects its electrical and thermal properties. We have found that the amount of polymer residue left after the transfer of chemical vapor deposited (CVD) graphene varies depending on the initial concentration of the polymer solution, and this residue influences the electrical performance of graphene field-effect transistors fabricated on SiO2/Si. A PMMA solution with lower concentration gave less residue after exposure to acetone, resulting in less p-type doping in graphene and higher charge carrier mobility. The electrical properties of the weakly p-doped graphene could be further enhanced by exposure to formamide with the Dirac point at nearly zero gate voltage and a more than 50% increase of the room-temperature charge carrier mobility in air. This can be attributed to electron donation to graphene by the -NH2 functional group in formamide that is absorbed in the polymer residue. This work provides a route to enhancing the electrical properties of CVD-grown graphene even when it has a thin polymer coating.

  15. Physical and structural studies of chemical Vapor deposited lacunar neodymium manganite thin films

    Directory of Open Access Journals (Sweden)

    Oumezzine M.

    2012-06-01

    Full Text Available Lacunar Nd1-xMnO3-δ thin films were successfully deposited by a liquid source metal-organic MOCVD technique on (001 SrTiO3 (STO, LaAlO3 (LAO and Si substrates. Optimal growth conditions are reported. TEM and X-ray diffraction characterisations reveal that the thin films grown on STO and LAO substrates are single crystalline layers epitaxially grown on the top of the substrates. The relationship between the crystallographic orientation of the films and those of the substrates were determined. Magnetic transition temperatures (Tc of the as-grown STO films, deduced from Squid Magnetometer measurements, are compared to the corresponding bulk values (typically 100K. Our magnetic measurements also suggest a complicated magnetic behavior close to the one observed in bulk samples: magnetization curves obtained under different applied magnetic fields indicate a possible reverse of the magnetization sign at low temperatures.

  16. Thermogravimetric evaluation of the suitability of precursors for MOCVD

    Science.gov (United States)

    Kunte, G. V.; Shivashankar, S. A.; Umarji, A. M.

    2008-02-01

    A method based on the Langmuir equation for the estimation of vapour pressure and enthalpy of sublimation of subliming compounds is described. The variable temperature thermogravimetric/differential thermogravimetric (TG/DTG) curve of benzoic acid is used to arrive at the instrument parameters. Employing these parameters, the vapour pressure-temperature curves are derived for salicylic acid and camphor from their TG/DTG curves. The values match well with vapour pressure data in the literature, obtained by effusion methods. By employing the Clausius-Clapeyron equation, the enthalpy of sublimation could be calculated. Extending the method further, two precursors for metal-organic chemical vapour deposition (MOCVD) of titanium oxide bis-isopropyl bis tert-butyl 2-oxobutanoato titanium, Ti(OiPr)2(tbob)2, and bis-oxo-bis-tertbutyl 2-oxobutanoato titanium, [TiO(tbob)2]2, have been evaluated. The complex Ti(OiPr)2(tbob)2 is found to be a more suitable precursor. This approach can be helpful in quickly screening for the suitability of a compound as a CVD precursor.

  17. Effects of TiO{sub 2} buffer layer on the photoelectrochemical properties of TiO{sub 2} Nano rods grown by modified chemical bath deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Tae-hyun; Ha, Jin-wook; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2015-08-15

    In this study, we grew TiO{sub 2} nano rods on TiO{sub 2}-film buffered FTO substrate using modified chemical bath deposition (M-CBD). The TiO{sub 2} buffer layer was grown by spin coating method with different RPM (revolutions per minute) values and deposition cycles. We investigated the effects of the RPM values and the deposition cycles on the morphological, structural and photoelectrochemical properties of TiO{sub 2} nano rods. In this work, we have also found that the morphological and structural properties of TiO{sub 2} nano rods affected the photoelectrochemical properties of TiO{sub 2} nano rods. And the maximum photocurrent density of 0.34 mA/cm{sup 2} at 0.6V (vs.SCE) was obtained from the buffer layer deposition process condition of 4,000 RPM and two-times buffer layer depositions.

  18. Corrosion resistant coatings (Al2O3) produced by metal organic chemical vapour deposition using aluminium-tri-sec-butoxide

    NARCIS (Netherlands)

    Haanappel, V.A.C.; Corbach, van H.D.; Fransen, T.; Gellings, P.J.

    1993-01-01

    The metal organic chemical vapour deposition (MOCVD) of amorphous alumina films on steel was performed in nitrogen at atmospheric pressure. This MOCVD process is based on the thermal decomposition of aluminium-tri-sec-butoxide (ATSB). The effect of the deposition temperature (within the range 290–42

  19. Characterization of photoluminescent (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3} thin-films prepared by metallorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    McKittrick, J.; Bacalski, C.F.; Hirata, G.A. [Univ. of California, San Diego, La Jolla, CA (United States); Hubbard, K.M.; Pattillo, S.G.; Salazar, K.V.; Trkula, M. [Los Alamos National Lab., NM (United States). Materials Science and Technology Div.

    1998-12-01

    Europium doped yttrium oxide, (Y{sub 1{minus}x}Eu{sub x}){sub 2}O{sub 3}, thin-films were deposited on silicon and sapphire substrates by metallorganic chemical vapor deposition (MOCVD). The films were grown in a MOCVD chamber reacting yttrium and europium tris(2,2,6,6-tetramethyl-3,5,-heptanedionates) precursors in an oxygen atmosphere at low pressures (5 Torr) and low substrate temperatures (500--700 C). The films deposited at 500 C were flat and composed of nanocrystalline regions of cubic Y{sub 2}O{sub 3}, grown in a textured [100] or [110] orientation to the substrate surface. Films deposited at 600 C developed from the flat, nanocrystalline morphology into a plate-like growth morphology oriented in the [111] with increasing deposition time. Monoclinic Y{sub 2}O{sub 3}:Eu{sup 3+} was observed in x-ray diffraction for deposition temperatures {ge}600 C on both (111) Si and (001) sapphire substrates. This was also confirmed by the photoluminescent emission spectra.

  20. SnO{sub 2} thin films grown by atomic layer deposition using a novel Sn precursor

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Min-Jung [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (Korea, Republic of); Cho, Cheol Jin [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Materials Science and Engineering, Seoul National University, Seoul, 151-744 (Korea, Republic of); Kim, Kwang-Chon; Pyeon, Jung Joon [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Park, Hyung-Ho [Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (Korea, Republic of); Kim, Hyo-Suk; Han, Jeong Hwan; Kim, Chang Gyoun; Chung, Taek-Mo [Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 305-600 (Korea, Republic of); Park, Tae Joo [Department of Materials Science and Engineering, Hanyang University, Ansan, 426-791 (Korea, Republic of); Kwon, Beomjin [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Jeong, Doo Seok; Baek, Seung-Hyub [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Nanomaterials, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of); Kang, Chong-Yun; Kim, Jin-Sang [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Kim, Seong Keun, E-mail: s.k.kim@kist.re.kr [Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (Korea, Republic of); Department of Nanomaterials, Korea University of Science and Technology, Daejeon, 305-333 (Korea, Republic of)

    2014-11-30

    Highlights: • We developed a new ALD process for SnO{sub 2} films using dimethylamino-2-methyl-2-propoxy-tin(II) as a novel Sn precursor. • The SnO{sub 2} films grown from Sn(dmamp){sub 2} has negligible impurity contents. • Sn ions in the films had a single binding state corresponding to Sn{sup 4+} in SnO{sub 2}. - Abstract: SnO{sub 2} thin films were grown by atomic layer deposition (ALD) with dimethylamino-2-methyl-2-propoxy-tin(II) (Sn(dmamp){sub 2}) and O{sub 3} in a temperature range of 100–230 °C. The ALD window was found to be in the range of 100–200 °C. The growth per cycle of the films in the ALD window increased with temperature in the range from 0.018 to 0.042 nm/cycle. Above 230 °C, the self-limiting behavior which is a unique characteristic of ALD, was not observed in the growth because of the thermal decomposition of the Sn(dmamp){sub 2} precursor. The SnO{sub 2} films were amorphous in the ALD window and exhibited quite a smooth surface. Sn ions in all films had a single binding state corresponding to Sn{sup 4+} in SnO{sub 2}. The concentration of carbon and nitrogen in the all SnO{sub 2} films was below the detection limit of the auger electron spectroscopy technique and a very small amount of carbon, nitrogen, and hydrogen was detected by secondary ions mass spectroscopy only. The impurity contents decreased with increasing the growth temperature. This is consistent with the increase in the density of the SnO{sub 2} films with respect to the growth temperature. The ALD process with Sn(dmamp){sub 2} and O{sub 3} shows excellent conformality on a hole structure with an aspect ratio of ∼9. This demonstrates that the ALD process with Sn(dmamp){sub 2} and O{sub 3} is promising for growth of robust and highly pure SnO{sub 2} films.

  1. Electrical characterization of SiGeSn grown on Ge substrate using ultra high vacuum chemical vapor deposition

    Science.gov (United States)

    Ahoujja, Mo; Kang, S.; Hamilton, M.; Yeo, Y. K.; Kouvetakis, J.; Menendez, J.

    2012-02-01

    There has been recently considerable interest in growing SiyGe1-x-ySnx alloys for the fabrication of photonic devices that could be integrated with Si technologies. We report temperature dependent Hall (TDH) measurements of the hole concentration and mobility from high quality p-type doped Si0.08Ge0.90Sn0.02 layers grown on p-type doped Ge substrates using ultra high vacuum chemical vapor deposition. The TDH measurements show the hole sheet density remains constant at low temperatures before slightly decreasing and dipping at ˜ 125 K. It then exponentially increases with temperature due to the activation of shallow acceptors. At temperatures above ˜ 450 K, the hole sheet density increases sharply indicating the onset of intrinsic conduction in the SiGeSn and/or Ge layers. To extract the electrical properties of the SiGeSn layer alone, a parametric fit using a multi layer conducting model is applied to the measured hole concentration and mobility data. The analysis yields boron and gallium doping concentrations of 3x10^17 cm-3 and 1x10^18 cm-3 with activation energies of 10 meV and 11 meV for the SiGeSn layer and Ge substrate, respectively. Furthermore, a temperature independent hole sheet concentration of ˜5x10^15 cm-2 with a mobility of ˜250 cm^2/Vs, which is believed to be due to an interfacial layer between the SiGeSn layer and the Ge substrate, is also determined.

  2. Thickness-Dependent Binding Energy Shift in Few-Layer MoS2 Grown by Chemical Vapor Deposition.

    Science.gov (United States)

    Lin, Yu-Kai; Chen, Ruei-San; Chou, Tsu-Chin; Lee, Yi-Hsin; Chen, Yang-Fang; Chen, Kuei-Hsien; Chen, Li-Chyong

    2016-08-31

    The thickness-dependent surface states of MoS2 thin films grown by the chemical vapor deposition process on the SiO2-Si substrates are investigated by X-ray photoelectron spectroscopy. Raman and high-resolution transmission electron microscopy suggest the thicknesses of MoS2 films to be ranging from 3 to 10 layers. Both the core levels and valence band edges of MoS2 shift downward ∼0.2 eV as the film thickness increases, which can be ascribed to the Fermi level variations resulting from the surface states and bulk defects. Grainy features observed from the atomic force microscopy topographies, and sulfur-vacancy-induced defect states illustrated at the valence band spectra imply the generation of surface states that causes the downward band bending at the n-type MoS2 surface. Bulk defects in thick MoS2 may also influence the Fermi level oppositely compared to the surface states. When Au contacts with our MoS2 thin films, the Fermi level downshifts and the binding energy reduces due to the hole-doping characteristics of Au and easy charge transfer from the surface defect sites of MoS2. The shift of the onset potentials in hydrogen evolution reaction and the evolution of charge-transfer resistances extracted from the impedance measurement also indicate the Fermi level varies with MoS2 film thickness. The tunable Fermi level and the high chemical stability make our MoS2 a potential catalyst. The observed thickness-dependent properties can also be applied to other transition-metal dichalcogenides (TMDs), and facilitates the development in the low-dimensional electronic devices and catalysts.

  3. Control of the nucleation and quality of graphene grown by low-pressure chemical vapor deposition with acetylene

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Meng, E-mail: youmou@rift.mech.tohoku.ac.jp [Department of Nanomechanics, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Sasaki, Shinichirou [Department of Nanomechanics, Graduate School of Engineering, Tohoku University, Sendai 980-8579 (Japan); Suzuki, Ken; Miura, Hideo [Fracture and Reliability Research Institute, Tohoku University, Sendai 980-8579 (Japan)

    2016-03-15

    Graphical abstract: - Highlights: • For the first time, we succeeded in the LPCVD growth of monolayer graphene using acetylene as the precursor gas. • The growth rate is very high when acetylene is used as the source gas. Our process has exhibited the potential to shorten the growth time of CVD graphene. • We found that the domain size, defects density, layer number and the sheet resistance of graphene can be changed by changing the acetylene flow rates. • We found that it is also possible to form bilayer graphene using acetylene. However, further study are necessary to reduce the defects density. - Abstract: Although many studies have reported the chemical vapor deposition (CVD) growth of large-area monolayer graphene from methane, synthesis of graphene using acetylene as the source gas has not been fully explored. In this study, the low-pressure CVD (LPCVD) growth of graphene from acetylene was systematically investigated. We succeeded in regulating the domain size, defects density, layer number and the sheet resistance of graphene by changing the acetylene flow rates. Scanning electron microscopy and Raman spectroscopy were employed to confirm the layer number, uniformity and quality of the graphene films. It is found that a low flow rate of acetylene (0.28 sccm) is required to form high-quality monolayer graphene in our system. On the other hand, the high acetylene flow rate (7 sccm) will induce the growth of the bilayer graphene domains with high defects density. On the basis of selected area electron diffraction (SAED) pattern, the as-grown monolayer graphene domains were analyzed to be polycrystal. We also discussed the relation between the sheet resistacne and defects density in graphene. Our results provide great insights into the understanding of the CVD growth of monolayer and bilayer graphene from acetylene.

  4. Improved photoluminescence of vertically aligned ZnO nanorods grown on BaSrTiO{sub 3} by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Varanasi, C V [University of Dayton Research Institute, Dayton, OH 45469 (United States); Leedy, K D; Tomich, D H [Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433 (United States); Subramanyam, G [University of Dayton, Dayton, OH 45469 (United States); Look, D C, E-mail: Chakrapani.Varanasi@wpafb.af.mi [Semiconductor Research Center, Wright State University, Dayton, OH 45435 (United States)

    2009-09-23

    ZnO nanorods were grown on a variety of substrates such as Si, SiO{sub 2}/Si and sapphire in a large-area pulsed laser deposition chamber designed for sensor device fabrication. Processing conditions were optimized to grow ZnO nanorods with or without seed layers. Au, Cr and BaSrTiO{sub 3} (BST) seed layers were investigated to compare their effects on the diameter and orientation of ZnO nanorods. ZnO nanorods were observed to align better when grown on sapphire, Cr or BST seed layers as compared to Au or Si layers. The highest quality nanorods were those grown on BST seed layers, as shown by 4 K photoluminescence donor-bound-exciton linewidths of only 0.5 meV.

  5. Influence of Postdeposition Cooling Atmosphere on Thermoelectric Properties of 2% Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition

    Science.gov (United States)

    Saini, S.; Mele, P.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Luna, L. Molina; Hopkins, P. E.

    2015-06-01

    We have investigated the thermoelectric properties of 2% Al-doped ZnO (AZO) thin films depending on the postdeposition cooling atmosphere [in oxygen pressure (AZO-O) or vacuum (AZO-V)]. Thin films were grown by pulsed laser deposition on sapphire () substrates at various deposition temperatures ( to ). All films were c-axis oriented. The electrical conductivity of AZO-V thin films was higher than that of AZO-O thin films across the whole temperature range from 300 K to 600 K, due to the optimal carrier concentration () of AZO-V samples. Furthermore, the thermoelectric performance of AZO-V films increased with the deposition temperature; for instance, the highest power factor of and dimensionless figure of merit of 0.07 at 600 K were found for AZO-V thin film deposited at.

  6. Growth and characterization of AP-MOCVD iron doped titanium dioxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gauthier, V.; Bourgeois, S. [Bourgogne Univ., Dijon (France). Lab. de Recherches sur la Reactivite des Solides; Sibillot, P.; Maglione, M.; Sacilotti, M. [Laboratoire de Physique de l`Universite de Bourgogne, UPRESA 5027 CNRS, BP 400, F 21011, Dijon Cedex (France)

    1999-02-26

    Atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) was used to prepare iron doped titanium dioxide thin films. Thin films, between 40 and 150 nm thick, were deposited on Si, SiO{sub 2} and Al{sub 2}O{sub 3} substrates using titanium tetra isopropoxide and ferrocene as metal organic precursors. TiO{sub 2} iron doping was achieved in the range of 1-4 at.%. The film morphology and thickness, polycrystalline texture and doping content were studied using respectively scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The influence of growth temperature, deposition time, substrate type and dopant partial pressure were studied. Electrical characterizations of the films were also performed. (orig.) 30 refs.

  7. Thickness and photocatalytic activity relation in TiO$_2$:N films grown by atomic layer deposition with methylene-blue and E. coli bacteria

    Indian Academy of Sciences (India)

    M M M CONTRERAS TURRUBIARTES; E LÓPEZ LUNA; J L ENRIQUEZ-CARREJO; A PEDROZA RODRIGUEZ; J C SALCEDO REYES; M A VIDAL BORBOLLA; P G MANI-GONZALEZ

    2017-10-01

    This study presents an analysis of the photocatalytic efficiency in TiO$_2$:N thin films grown by atomic layer deposition related to the film thickness. The nitriding process was carried out with nitrogen plasma by molecular nitrogen decomposition after TiO$_2$ deposition. The study was performed using the time-dependent degradation of colour units for methylene-blue solutions and inactivation percentages for Escherichia coli bacteria, for potential applications in sewage purification. To determine the optoelectronic properties of the films, the optical, structural, surface and thickness characterizations were carried out by photoluminescence, Raman spectroscopy, atomic force microscopy and scanning electron microscopy, respectively.

  8. Influence of vacuum-annealing on the diffusion barrier properties of MOCVD TiN for Cu metallization

    CERN Document Server

    Lee, J G; Lee, E G; Lee, J Y; Kim, K B; Lee, J M

    1999-01-01

    We have investigated the effects of vacuum annealing of TDMAT-sourced TiN on the film qualities, as well as on the properties of the barrier against Cu diffusion. Vacuum annealing at 550 .deg. C to 1000 .deg. C achieved a significant densification of the TiN films with the interaction of Ti in the TiN prepared by metalorganic chemical-vapor deposition (MOCVD TiN) and Si at the interface. This interaction produced a stable interface between TiN and Si. In addition, annealing of the films at 1000 .deg. C transformed the amorphous TiN(C) films into crystalline TiNC solid solutions. About 10 at % silicon diffused into the TiN film from the Si substrate, and oxygen in the as-deposited TiN film was expelled to the surface after annealing at 1000 .deg. C. The barrier failure mechanism of MOCVD TiN in Cu metallization included the indiffusion of Cu and the accompanying outdiffusion of silicon through the barrier layer. The annealing of MOCVD TiN in vacuum improved the diffusion barrier properties, partly due to the d...

  9. Electrical and physicochemical properties of atomic-layer-deposited HfO{sub 2} film on Si substrate with interfacial layer grown by nitric acid oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Seung Hyun [Department of Advanced Materials Engineering, Hanyang University, Ansan 15588 (Korea, Republic of); Seok, Tae Jun; Jin, Hyun Soo [Department of Materials Science & Chemical Engineering, Hanyang University, Ansan 15588 (Korea, Republic of); Kim, Woo-Byoung, E-mail: woo7838@dankook.ac.kr [Department of Energy Engineering, Dankook University, Cheonan 330-714 (Korea, Republic of); Park, Tae Joo, E-mail: tjp@hanyang.ac.kr [Department of Advanced Materials Engineering, Hanyang University, Ansan 15588 (Korea, Republic of); Department of Materials Science & Chemical Engineering, Hanyang University, Ansan 15588 (Korea, Republic of)

    2016-03-01

    Graphical abstract: - Highlights: • Ultrathin SiO{sub 2} interfacial layers grown using nitric acid oxidation and O{sub 3} oxidation were adopted at the interface of HfO{sub 2}/Si. • Higher physical density of interfacial layer grown using nitric acid oxidation resulted in the suppressed Si diffusion from substrate into the film. • The interface properties as well as permittivity of the film were improved by adoption of interfacial layer grown using nitric acid oxidation. - Abstract: The ultrathin SiO{sub 2} interfacial layer (IL) was adopted at the interface between atomic-layer-deposited HfO{sub 2} gate dielectric film and a Si substrate, which was grown using nitric acid oxidation (NAO) and O{sub 3} oxidation (OZO) prior to HfO{sub 2} film deposition. X-ray photoelectron spectroscopy result revealed that Si diffusion from the substrate into the film was suppressed for the film with NAO compared to that with OZO, which was attributed to the higher physical density of IL. The electrical measurement using metal–insulator–semiconductor devices showed that the film with NAO exhibited higher effective permittivity and lower densities of fixed charge and slow state at the interface. Furthermore, the leakage current density at an equivalent electrical thickness was lower for the film with NAO than OZO.

  10. Laminated Al{sub 2}O{sub 3}–HfO{sub 2} layers grown by atomic layer deposition for microelectronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Lo Nigro, Raffaella, E-mail: raffaella.lonigro@imm.cnr.it [Istituto per la Microelettronica e Microsistemi, IMM-CNR, Strada VIII 5, 95121 Catania (Italy); Schilirò, Emanuela [Istituto per la Microelettronica e Microsistemi, IMM-CNR, Strada VIII 5, 95121 Catania (Italy); Dipartimento di Scienze Chimiche, Università di Catania, and INSTM, UdR Catania, Viale A. Doria 6, 95125 Catania (Italy); Greco, Giuseppe; Fiorenza, Patrick; Roccaforte, Fabrizio [Istituto per la Microelettronica e Microsistemi, IMM-CNR, Strada VIII 5, 95121 Catania (Italy)

    2016-02-29

    Nanolaminated Al{sub 2}O{sub 3}–HfO{sub 2} and Al{sub 2}O{sub 3}/HfO{sub 2} bilayer thin films have been grown by plasma enhanced atomic layer deposition on silicon substrates. The nanolaminated system consists of alternating layers of Al{sub 2}O{sub 3} and HfO{sub 2}, while the bilayer system by contrast has been fabricated as a HfO{sub 2} about 15 nm thick film deposited on a Al{sub 2}O{sub 3} 15 nm thick film directly grown in contact with the silicon substrate. Both systems have been grown at a low temperature of 300 °C and both systems possess 30 nm total thickness. The dielectric properties and the structural evolution upon annealing treatment at 800 °C of the nanolaminated system have been compared to those of the bilayer. The collected data pointed out to promising properties of the fabricated nanolaminated films. - Highlights: • Nanolaminated Al{sub 2}O{sub 3}–HfO{sub 2} films were grown by Plasma Enhanced-ALD on Si(100). • Properties of nanolaminated and bilayer Al{sub 2}O{sub 3}/HfO{sub 2} were compared. • Nanolaminated samples possess higher thermal stability.

  11. A Passively Mode-Locked Diode-End-Pumped Nd:YAG Laser with a Semiconductor Saturable Absorber Mirror Grown by Metal Organic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    王勇刚; 马骁宇; 李春勇; 张治国; 张丙元; 张志刚

    2003-01-01

    We report the experimental results of a mode-locked diode-end-pumped Nd:YAG laser with a semiconductor saturable absorber mirror(SESAM)from which we achieved a 10ps pulse duration at 150MHz repetition rate.The SESAM was grown by metal organic chemical vapour deposition at low temperature.The recovery time was measured to be 0.5 ps,indicating the potential pulse compression to sub-picoseconds.

  12. Influence of deposition temperature on the structural and morphological properties of Be{sub 3}N{sub 2} thin films grown by reactive laser ablation

    Energy Technology Data Exchange (ETDEWEB)

    Chale-Lara, F., E-mail: fabio_chale@yahoo.com.mx [Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Apartado Postal 2681, Ensenada, Baja California, C.P. 22860 (Mexico); Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autonoma de Mexico, Apartado Postal 14, Ensenada CP 22860, Baja California (Mexico); Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada-IPN, Unidad Altamira, Km. 14.5 Carretera Tampico-Puerto Industrial, Altamira, Tamaulipas (Mexico); Farias, M.H.; De la Cruz, W. [Centro de Nanociencias y Nanotecnologia, Universidad Nacional Autonoma de Mexico, Apartado Postal 14, Ensenada CP 22860, Baja California (Mexico); Zapata-Torres, M. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada-IPN, Legaria 694, Col. Irrigacion, Del. Miguel Hidalgo, Mexico D.F. (Mexico)

    2010-10-01

    Be{sub 3}N{sub 2} thin films have been grown on Si(1 1 1) substrates using the pulsed laser deposition method at different substrate temperatures: room temperature (RT), 200 deg. C, 400 deg. C, 600 deg. C and 700 deg. C. Additionally, two samples were deposited at RT and were annealed after deposition in situ at 600 deg. C and 700 deg. C. In order to obtain the stoichiometry of the samples, they have been characterized in situ by X-ray photoelectron (XPS) and reflection electron energy loss spectroscopy (REELS). The influence of the substrate temperature on the morphological and structural properties of the films was investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The results show that all prepared films presented the Be{sub 3}N{sub 2} stoichiometry. Formation of whiskers with diameters of 100-200 nm appears at the surface of the films prepared with a substrate temperature of 600 deg. C or 700 deg. C. However, the samples grown at RT and annealed at 600 deg. C or 700 deg. C do not show whiskers on the surface. The average root mean square (RMS) roughness and the average grain size of the samples grown with respect the substrate temperature is presented. The films grown with a substrate temperature between the room temperature to 400 deg. C, and the sample annealed in situ at 600 deg. C were amorphous; while the {alpha}Be{sub 3}N{sub 2} phase was presented on the samples with a substrate temperature of 600 deg. C, 700 deg. C and that deposited with the substrate at RT and annealed in situ at 700 deg. C.

  13. Vertically aligned ZnO nanorods on hot filament chemical vapor deposition grown graphene oxide thin film substrate: solar energy conversion.

    Science.gov (United States)

    Ameen, Sadia; Akhtar, M Shaheer; Song, Minwu; Shin, Hyung Shik

    2012-08-01

    Vertically aligned zinc oxide (ZnO) nanorods (NRs) were grown by the low-temperature hydrothermal method on graphene oxide (GO) coated FTO substrates, where GO was directly deposited on fluorine doped tin oxide (FTO) substrates using hydrogen (H(2), 65 sccm) and methane (CH(4), 50 sccm) through hot filament chemical vapor deposition (HFCVD) technique. The vertically aligned ZnO NRs were applied as effective photoanode for the fabrication of efficient dye sensitized solar cells (DSSCs). Highly uniform ZnO NRs were grown on GO deposited FTO substrate with the average length of ∼2-4 μm and diameter of ∼200-300 nm. The possible mechanism of grown ZnO NRs clearly revealed the significant role of GO on FTO in architecting the aligned growth of ZnO NRs. The grown vertically aligned ZnO NRs possessed a typical wurtzite hexagonal crystal structure. The structural and the optical studies confirmed the formation of partial hydrogen bonding between surface functional groups of GO and ZnO NRs. A solar-to-electricity conversion efficiency of ∼2.5% was achieved by DSSC fabricated with ZnO NRs deposited on graphene oxide (GO-ZnO NRs) thin film photoanode. The presence of GO on FTO substrate expressively increased the surface area of GO-ZnO photoanode, which resulted in high dye loading as well as high light harvesting efficiency and thus ensued the increased photocurrent density and the improved performance of DSSCs.

  14. Dependence of optical property on the defects in Si-doped GaN grown by metal organic chemical vapor deposition

    CERN Document Server

    Kim, C K; Yi, J H; Choi, Y H; Yoo, T K; Hong, C H

    1999-01-01

    We investigated dependence of optical property on the microstructures and defects for Si-doped GaN grown by metal organic chemical vapor deposition using photoluminescence and x-ray diffraction measurements. Radiative transitions at different wavelengths were observed to be related to the different type of microstructure which can be characterized by x-ray diffraction measurements. Attempts were made to explain the relation between optical property and microstructures.

  15. Preparation of platinum-iridium nanoparticles on titania nanotubes by MOCVD and their catalytic evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Colindres, S. Capula [National Polytechnic Institute, Department of Metallurgical Eng., Mexico 07300 D.F., AP 75-874 (Mexico); Garcia, J.R. Vargas, E-mail: rvargasga@ipn.m [National Polytechnic Institute, Department of Metallurgical Eng., Mexico 07300 D.F., AP 75-874 (Mexico); Antonio, J.A. Toledo; Chavez, C. Angeles [Petroleum Mexican Institute, Eje Central Lazaro Cardenas No.152, Mexico 07730 D.F. (Mexico)

    2009-08-26

    Pt based catalysts are commonly used in several industrial processes involving hydrogenation and dehydrogenation reactions. New deposition methods as well as support materials are being investigated to generate new catalysts with superior catalytic activity. In this work, platinum-iridium (Pt-Ir) nanoparticles of about 5 nm in size were supported on titania (TiO{sub 2}) nanotubes by metal organic chemical vapor deposition (MOCVD). The TiO{sub 2} nanotubes were prepared by an alkali hydrothermal method using sodium hydroxide solution at 100 deg. C, during 64.8 ks. Pt-Ir nanoparticles were obtained by controlling the MOCVD conditions at 400 deg. C and 66.6 kPa. Textural properties and particle size were investigated by nitrogen physisorption (BET method), X-ray diffraction, Raman spectroscopy and high resolution transmission electron microscopy. Catalytic activity was measured in cyclohexene disproportion as the test molecule for hydrogenation/dehydrogenation reactions. The TiO{sub 2} nanotubes exhibit a considerable high surface area of about 425,000 m{sup 2}/kg, however, after calcination at 400 deg. C their nanotubular morphology was partially transformed. In spite of this change, the 5 nm Pt-Ir nanoparticles supported on TiO{sub 2} nanotubes were more active in the cyclohexene disproportion reaction than conventional Pt-Ir/alumina catalysts in the whole range of temperatures investigated (50-250 deg. C). Hydrogenation reactions (high selectivity to cyclohexane) predominate at temperatures below 150 deg. C.

  16. Thin films of metal oxides grown by chemical vapor deposition from volatile transition metal and lanthanide metal complexes

    Science.gov (United States)

    Pollard, Kimberly Dona

    1998-08-01

    synthesized and characterized spectroscopically. An X-ray structural determination of lbrack Ce(hfac)sb3(CHsb3O(CHsb2CHsb2O)sb2CHsb3)rbrack was reported. As-deposited films of cerium oxide were studied by XPS, SEM, and XRD. The benefits of catalyst-enhanced CVD were also examined. Bimetallic films of Ysb2Cesb2O, and Pd/CeOsb2 were grown and examined by XPS. The decomposition of cerium precursors to form cerium oxide was examined by studying ne exhaust products of the CVD reaction using GC-MS. An organometallic complex, (Ir(Cp)(COD)), (Cp = cyclopentadienyl, COD = 1,5-cyclooctadiene) and a metal-organic complex, lbrack Ir(acac)sb3rbrack, (acac = \\{CHsb3C(O)CHC(O)CHsb3\\}sp-) were used to study the formation of iridium dioxide, IrOsb2. Films were analyzed using XPS, SEM, and XRD. The GC-MS technique was used to study trapped exhaust products of a CVD reaction to give insight into decomposition mechanisms at the substrate surface.

  17. Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

    Science.gov (United States)

    Xu, Xiaoqing; Zhong, Jiebin; So, Hongyun; Norvilas, Aras; Sommerhalter, Christof; Senesky, Debbie G.; Tang, Mary

    2016-11-01

    In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG) properties of AlGaN/GaN high electron mobility transistor (HEMT) structure grown by metal-organic chemical vapor deposition (MOCVD) on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72%) across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm2/Vṡs at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm2/Vṡs which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si.

  18. Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

    Directory of Open Access Journals (Sweden)

    Xiaoqing Xu

    2016-11-01

    Full Text Available In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG properties of AlGaN/GaN high electron mobility transistor (HEMT structure grown by metal-organic chemical vapor deposition (MOCVD on 4-inch Si substrate. High uniformity of 2DEG mobility (standard deviation down to 0.72% across the radius of the 4-inch wafer has been achieved, and 2DEG mobility up to 1740.3 cm2/V⋅s at room temperature has been realized at low C and O impurity concentrations due to reduced ionized impurity scattering. The 2DEG mobility is further enhanced to 2161.4 cm2/V⋅s which is comparable to the highest value reported to date when the contact structure is switched from a square to a cross pattern due to reduced piezoelectric scattering at lower residual strain. This work provides constructive insights and promising results to the field of wafer-scale fabrication of AlGaN/GaN HEMT on Si.

  19. Effects of the gas feeding method on the properties of 3C-SiC/Si(111) grown by rapid thermal chemical vapor deposition

    CERN Document Server

    Shim, H W; Suh, E K

    1998-01-01

    High-quality crystalline 3C-SiC thin films are grown by rapid thermal chemical vapor deposition (RTCVD) on Si(111) by using two different growth processes. The films are grown along the [111] direction at 1200 .deg. C. The quality of the films are investigated by X-ray diffraction, transmission electron microscopy, and transmission electron diffraction. The SiC film grown by flowing the tetramethylsilane (TMS) gas before heating the substrate up to the growth temperature does not contain many voids at the SiC/Si interface, while the SiC grown by heating the substrate before supplying the TMS gas possesses many voids at the interface. The unintentionally doped SiC film grown by gas flow before heating the substrate appears to be n-type with a carrier concentration of 1.48 x 10 sup 1 sup 6 cm sup - sup 3 , a electron mobility of 884 cm sup 2 /V centre dot s, and a resistivity of 0.462 OMEGA centre dot cm. The physical properties, such as the electrical properties, the surface morphology, and the crystallinity, ...

  20. Comparison of hafnium silicate thin films on silicon (1 0 0) deposited using thermal and plasma enhanced metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rangarajan, Vishwanathan; Bhandari, Harish; Klein, Tonya M

    2002-11-01

    Hafnium silicate thin films were deposited by metal organic chemical vapor deposition (MOCVD) on Si at 400 deg. C using hafnium (IV) t-butoxide. Films annealed in O{sub 2} were compared to as-deposited films using X-ray photoelectron spectroscopy and X-ray diffraction. Hafnium silicate films were deposited by both thermal and plasma enhanced MOCVD using 2% SiH{sub 4} in He as the Si precursor. An O{sub 2} plasma increased Si content to as much as {approx}26 at.% Si. Both thermal and plasma deposited Hf silicates are amorphous as deposited, however, thermal films exhibit crystallinity after anneal. Surface roughness as measured by atomic force microscopy was found to be 1.1 and 5.1 nm for MOCVD hafnium silicate and plasma enhanced MOCVD hafnium silicate, respectively.

  1. Synthesis of TiO2 supported on activated carbon by MOCVD:operation parameters study

    Institute of Scientific and Technical Information of China (English)

    张兴旺; 周明华; 雷乐成; 徐甦

    2004-01-01

    A novel metallo-organic chemical vapor deposition (MOCVD) technique has been applied to the preparation of the photocatalytic titanium dioxide supported on activated carbon. The effects of various condition parameters such as carrier gas flow rate, source temperature and deposition temperature on the deposition rate were investigated. The maximum deposition rate of 8.2 mg/(g.h) was obtained under conditions of carrier gas flow rate of 400 ml/min, source temperature of 423 K and deposition temperature of 913 K. The deposition rate followed Arrhenius behavior at temperature of 753 K to 913 K, corresponding to activation energy Ea of 51.09 kJ/mol. TiO2 existed only in anatase phase when the deposition temperature was 773 K to 973 K. With increase of deposition temperature from 1073 K to 1273 K, the rutile content sharply increased from 7% to 70%. It was found that a deposition temperature of 773 K and a higher source temperature of 448 K resulted in finely dispersed TiO2 particles, which were mainly in the range of 10-20 nm.

  2. Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

    Science.gov (United States)

    Consiglio, Steven P.

    To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of

  3. Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN

    Institute of Scientific and Technical Information of China (English)

    CHEN; Jun(陈俊); ZHANG; Shuming(张书明); ZHANG; Baoshun(张宝顺); ZHU; Jianjun(朱建军); FENG; Gan(冯淦); DUAN; Lihong(段俐宏); WANG; Yutian(王玉田); YANG; Hui(杨辉); ZHENG; Wenchen(郑文琛)

    2003-01-01

    The influence of growth pressure of GaN buffer layer on the properties of MOCVD GaN on α-Al2O3 has been investigated with the aid of a home-made in situ laser reflectometry measurement system. The results obtained with in situ measurements and scanning electron microscope show that with the increase in deposition pressure of buffer layer, the nuclei increase in size, which roughens the surface, and delays the coalescence of GaN nuclei. The optical and crystalline quality of GaN epilayer was improved when buffer layer was deposited at high pressure.

  4. Influence of homo-buffer layers and post-deposition rapid thermal annealing upon atomic layer deposition grown ZnO at 100 °C with three-pulsed precursors per growth cycle

    Science.gov (United States)

    Cheng, Yung-Chen; Yuan, Kai-Yun; Chen, Miin-Jang

    2017-10-01

    ZnO main epilayers are deposited with three-pulsed precursors in every growth cycle at 100 °C on various thicknesses of 300 °C-grown homo-buffer layers by atomic layer deposition (ALD) on sapphire substrate. Samples are treated without and with post-deposition rapid thermal annealing (RTA). Two different annealing temperatures 300 and 1000 °C are utilized in the ambience of oxygen for 5 min. Extremely low background electron concentration 8.4 × 1014 cm-3, high electron mobility 62.1 cm2/V s, and pronounced enhancement of near bandgap edge photoluminescence (PL) are achieved for ZnO main epilayer with sufficient thickness of buffer layer (200 ALD cycles) and post-deposition RTA at 1000 °C. Effective block and remove of thermally unstable mobile defects and other crystal lattice imperfections are the agents of quality promotion of ZnO thin film.

  5. Structural and photocatalytic properties of TiO2 films fabricated on silicon substrates by MOCVD method

    Institute of Scientific and Technical Information of China (English)

    YANG Jia-long; LI Ying; WANG Fu; ZUO Liang; Gu-Chul Yi; Wong Yong Choi

    2005-01-01

    Silicon(111) and Silicon(100) were employed for fabrication of TiO2 films by metal organic chemical vapor deposition(MOCVD).Titanium(Ⅳ) isopropoxide(Ti[O(C3H7)4]) was used as a precursor. The as-deposited TiO2 films were characterized with FE-SEM, XRD and AFM. The photocatalytic properties were investigated by decomposition of aqueous Orange Ⅱ. And UV-VIS photospectrometer was used for checking the absorption characteristics and photocatalytic degradation activity. The crystalline and structural properties of TiO2 film had crucial influences on the photodegradation efficiency. For MOCVD in-situ deposited films on Si substrates, the photoactivities varied following a shape of "M": at lower(350℃), middle(500℃) and higher(800℃) temperature of deposition, relative lower photodegradation activities were observed. At 400℃ and 700℃ of deposition, relative higher efficiencies of degradation were obtained, because one predominant crystallite orientation could be obtained as deposition at the temperature of two levels, especially a single anatase crystalline TiO2 film could be obtained at 700℃.

  6. CdTe thin film solar cells produced using a chamberless inline process via metalorganic chemical vapour deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kartopu, G., E-mail: giray.kartopu@glyndwr.ac.uk; Barrioz, V.; Monir, S.; Lamb, D.A.; Irvine, S.J.C.

    2015-03-02

    Cd{sub 1−x}Zn{sub x}S and CdTe:As thin films were deposited using a recently developed chamberless inline process via metalorganic chemical vapour deposition (MOCVD) at atmospheric pressure and assessed for fabrication of CdTe photovoltaic (PV) solar cells. Initially, CdS and Cd{sub 1−x}Zn{sub x}S coatings were applied onto 15 × 15 cm{sup 2} float glass substrates, characterised for their optical properties, and then used as the window layer in CdTe solar cells which were completed in a conventional MOCVD (batch) reactor. Such devices provided best conversion efficiency of 13.6% for Cd{sub 0.36}Zn{sub 0.64}S and 10% for CdS which compare favourably to the existing baseline MOCVD (batch reactor) devices. Next, sequential deposition of Cd{sub 0.36}Zn{sub 0.64}S and CdTe:As films was realised by the chamberless inline process. The chemical composition of a 1 μm CdTe:As/150 nm Cd{sub 0.36}Zn{sub 0.64}S bi-layer was observed via secondary ions mass spectroscopy, which showed that the key elements are uniformly distributed and the As doping level is suitable for CdTe device applications. CdTe solar cells formed using this structure provided a best efficiency of 11.8% which is promising for a reduced absorber thickness of 1.25 μm. The chamberless inline process is non-vacuum, flexible to implement and inherits from the legacy of MOCVD towards doping/alloying and low temperature operation. Thus, MOCVD enabled by the chamberless inline process is shown to be an attractive route for thin film PV applications. - Highlights: • CdS, CdZnS and CdTe thin films grown by a chamberless inline process • The inline films assessed for fabricating CdTe solar cells • 13.6% conversion efficiency obtained for CdZnS/CdTe cells.

  7. Three-Step Growth Optimization of A1N Epilayers by MOCVD

    Institute of Scientific and Technical Information of China (English)

    PENG Ming-Zeng; ZHOU Jun-Ming; GUO Li-Wei; ZHANG Jie; YU Nai-Sen; ZHU Xue-Liang; YAN Jian-Feng; GE Bin-Hui; JIA Hai-Qiang; CHEN Hong

    2008-01-01

    A three-step growth process is developed for depositing high-quality aluminium-nitride (AIN) epilayers on (001) sapphire by low pressure metalorganic chemical vapour deposition (LP-MOCVD). We adopt a low temperature (LT) AIN nucleation layer (NL), and two high temperature (HT) AIN layers with different Ⅴ/Ⅲ ratios. Our results reveal that the optimal NL temperature is 840-880℃, and there exists a proper growth switching from low to high Ⅴ/Ⅲ ratio for further reducing threading dislocations (TDs). The screw-type TD density of the optimized AIN film is just 7.86×106 cm-2, about three orders lower than its edge-type one of 2×109 cm-2 estimated by high-resolution x-ray diffraction (HRXRD) and cross-sectional transmission electron microscopy (TEM).

  8. Kinetic Study of MOCVD Ⅲ-Ⅴ Quaternary Antimonides

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    The kinetics of MOCVD GaInAsSb and AlGaAsSb was studied by the growth rate as a function of growth temperature and partial pressure of Ⅲ and Ⅴ MO species. The diffusion theory was used to explain the mass transport processes in MOCVD Ⅲ-Ⅴ quaternary antimonides. On the basis of the discussion about their growth kinetics and epilayer properties, the good quality multi-epilayers of these two quaternary antimonides and their photodetectors and arrays with wavelength of 1.8~2.3 μm and detectivities of D*>109 cm Hz1/2 W-1 were obtained.

  9. Process in manufacturing high efficiency AlGaAs/GaAs solar cells by MO-CVD

    Science.gov (United States)

    Yeh, Y. C. M.; Chang, K. I.; Tandon, J.

    1984-01-01

    Manufacturing technology for mass producing high efficiency GaAs solar cells is discussed. A progress using a high throughput MO-CVD reactor to produce high efficiency GaAs solar cells is discussed. Thickness and doping concentration uniformity of metal oxide chemical vapor deposition (MO-CVD) GaAs and AlGaAs layer growth are discussed. In addition, new tooling designs are given which increase the throughput of solar cell processing. To date, 2cm x 2cm AlGaAs/GaAs solar cells with efficiency up to 16.5% were produced. In order to meet throughput goals for mass producing GaAs solar cells, a large MO-CVD system (Cambridge Instrument Model MR-200) with a susceptor which was initially capable of processing 20 wafers (up to 75 mm diameter) during a single growth run was installed. In the MR-200, the sequencing of the gases and the heating power are controlled by a microprocessor-based programmable control console. Hence, operator errors can be reduced, leading to a more reproducible production sequence.

  10. Superconducting MgB2 Thin Films with Tc ≈ 39 K Grown by Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    王淑芳; 戴守愚; 周岳亮; 陈正豪; 崔大复; 许佳迪; 何萌; 吕惠宾; 杨国桢

    2001-01-01

    Superconducting MgB2 thin films were fabricated on Al2 O3 (0001) substrates under ex situ processing conditions.Boron thin films were deposited by pulsed laser deposition followed by a post-annealing process. Resistance measurements of the deposited MgB2 films show Tc of ~39 K, while scanning electron microscopy and x-ray vdiffraction analysis indicate that the films consist of well-crystallized grains with a highly c-axis-oriented structure.

  11. Oriented growth of thin films of samarium oxide by MOCVD

    Indian Academy of Sciences (India)

    K Shalini; S A Shivashankar

    2005-02-01

    Thin films of Sm2O3 have been grown on Si(100) and fused quartz by low-pressure chemical vapour deposition using an adducted -diketonate precursor. The films on quartz are cubic, with no preferred orientation at lower growth temperatures (∼ 550°C), while they grow with a strong (111) orientation as the temperature is raised (to 625°C). On Si(100), highly oriented films of cubic Sm2O3 at 625°C, and a mixture of monoclinic and cubic polymorphs of Sm2O3 at higher temperatures, are formed. Films grown on either substrate are very smooth and fine-grained. Infrared spectroscopic study reveals that films grown above 600°C are free of carbon.

  12. Significantly improved luminescence properties of nitrogen-polar (0001̅) InGaN multiple quantum wells grown by pulsed metalorganic chemical vapor deposition.

    Science.gov (United States)

    Song, Jie; Chang, Shih-Pang; Zhang, Cheng; Hsu, Ta-Cheng; Han, Jung

    2015-01-14

    We have demonstrated nitrogen-polar (0001̅) (N-polar) InGaN multiple quantum wells (MQWs) with significantly improved luminescence properties prepared by pulsed metalorganic chemical vapor deposition. During the growth of InGaN quantum wells, Ga and N sources are alternately injected into the reactor to alter the surface stoichiometry. The influence of flow duration in pulsed growth mode on the luminescence properties has been studied. We find that use of pulsed-mode creates a high density of hexagonal mounds with an increased InGaN growth rate and enhanced In composition around screw-type dislocations, resulting in remarkably improved luminescence properties. The mechanism of enhanced luminescence caused by the hexagonal mounds is discussed. Luminescence properties of N-polar InGaN MQWs grown with short pulse durations have been significantly improved in comparison with a sample grown by a conventional continuous growth method.

  13. Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs

    Science.gov (United States)

    Hatem, O.; Cunningham, J.; Linfield, E. H.; Wood, C. D.; Davies, A. G.; Cannard, P. J.; Robertson, M. J.; Moodie, D. G.

    2011-03-01

    We report the detection of terahertz frequency radiation using photoconductive antennas fabricated from Fe-doped InGaAs, grown by metal-organic chemical vapor deposition. Coherent photoconductive detection is demonstrated using femtosecond laser pulses centered at either an 800 or a 1550 nm wavelength. The InGaAs resistivity and the sensitivity of photoconductive detection are both found to depend on the Fe-doping level. We investigate a wide range of probe laser powers, finding a peak in detected signal for ˜5 mW probe power, followed by a reduction at larger powers, attributed to screening of the detected THz field by photo-generated carriers in the material. The measured signal from Fe:InGaAs photoconductive detectors excited at 800 nm is four times greater than that from a low-temperature-grown GaAs photodetector with identical antenna design, despite the use of a ten times smaller probe power.

  14. Simple fabrication of air-stable black phosphorus heterostructures with large-area hBN sheets grown by chemical vapor deposition method

    Science.gov (United States)

    Sinha, Sapna; Takabayashi, Yuya; Shinohara, Hisanori; Kitaura, Ryo

    2016-09-01

    We have developed a facile and general method to passivate thin black phosphorus (BP) flakes with large-area high-quality monolayer hexagonal boron nitride (hBN) sheets grown by the chemical vapor deposition (CVD) method. In spite of the one-atom-thick structure, the high-quality CVD-grown monolayer hBN has proven to be useful to prevent the degradation of thin BP flakes exfoliated on substrates. Mechanically exfoliated BP flakes prepared on a Si substrate are covered by the monolayer hBN sheet to preserve (otherwise unstable) atomic layered BP flakes from degradation. The present technique can generally be applied to fabricating BP-based electronic devices with much easiness.

  15. A systematic study of the relationship among the morphological, structural and photoelectrochemical properties of ZnO nanorods grown using the microwave chemical bath deposition method

    Science.gov (United States)

    Oh, Sungjin; Ryu, Hyukhyun; Lee, Won-Jae

    2017-08-01

    In this study, zinc oxide (ZnO) nanostructures were grown on a ZnO seed layer/fluorine-doped tin oxide (FTO) substrate for different growth durations ranging from 5 to 40 min using the microwave chemical bath deposition method. We studied the effect of growth duration on the morphological, structural, optical and photoelectrochemical properties of the ZnO nanostructures. From this study, we found that the photoelectrochemical properties of the ZnO nanostructures were largely affected by their morphological and structural properties. As a result, we obtained the highest photocurrent density of 0.46 mA/cm2 (at 1.5 V vs. SCE) from the sample grown for 30 min.

  16. Influence of oxygen pressure and aging on LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates

    KAUST Repository

    Park, Jihwey

    2014-02-24

    The crystal structures of LaAlO3 films grown by pulsed laser deposition on SrTiO3 substrates at oxygen pressure of 10−3 millibars or 10−5 millibars, where kinetics of ablated species hardly depend on oxygen background pressure, are compared. Our results show that the interface between LaAlO3 and SrTiO3 is sharper when the oxygen pressure is lower. Over time, the formation of various crystalline phases is observed while the crystalline thickness of the LaAlO3 layer remains unchanged. X-ray scattering as well as atomic force microscopy measurements indicate three-dimensional growth of such phases, which appear to be fed from an amorphous capping layer present in as-grown samples.

  17. Incorporation of La in epitaxial SrTiO3 thin films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates

    Science.gov (United States)

    McDaniel, Martin D.; Posadas, Agham; Ngo, Thong Q.; Karako, Christine M.; Bruley, John; Frank, Martin M.; Narayanan, Vijay; Demkov, Alexander A.; Ekerdt, John G.

    2014-06-01

    Strontium titanate, SrTiO3 (STO), thin films incorporated with lanthanum are grown on Si (001) substrates at a thickness range of 5-25 nm. Atomic layer deposition (ALD) is used to grow the LaxSr1-xTiO3 (La:STO) films after buffering the Si (001) substrate with four-unit-cells of STO deposited by molecular beam epitaxy. The crystalline structure and orientation of the La:STO films are confirmed via reflection high-energy electron diffraction, X-ray diffraction, and cross-sectional transmission electron microscopy. The low temperature ALD growth (˜225 °C) and post-deposition annealing at 550 °C for 5 min maintains an abrupt interface between Si (001) and the crystalline oxide. Higher annealing temperatures (650 °C) show more complete La activation with film resistivities of ˜2.0 × 10-2 Ω cm for 20-nm-thick La:STO (x ˜ 0.15); however, the STO-Si interface is slightly degraded due to the increased annealing temperature. To demonstrate the selective incorporation of lanthanum by ALD, a layered heterostructure is grown with an undoped STO layer sandwiched between two conductive La:STO layers. Based on this work, an epitaxial oxide stack centered on La:STO and BaTiO3 integrated with Si is envisioned as a material candidate for a ferroelectric field-effect transistor.

  18. Mechanically and thermally stable Si-Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C

    Science.gov (United States)

    Green, M. L.; Weir, B. E.; Brasen, D.; Hsieh, Y. F.; Higashi, G.; Feygenson, A.; Feldman, L. C.; Headrick, R. L.

    1991-01-01

    Traditional techniques for growing Si-Ge layers have centered around low-temperature growth methods such as molecular-beam epitaxy and ultrahigh vacuum chemical vapor deposition in order to achieve strain metastability and good growth control. Recognizing that metastable films are probably undesirable in state-of-the-art devices on the basis of reliability considerations, and that in general, crystal perfection increases with increasing deposition temperatures, we have grown mechanically stable Si-Ge films (i.e., films whose composition and thickness places them on or below the Matthews-Blakeslee mechanical equilibrium curve) at 900 °C by rapid thermal chemical vapor deposition. Although this limits the thickness and the Ge composition range, such films are exactly those required for high-speed heterojunction bipolar transistors and Si/Si-Ge superlattices, for example. The 900 °C films contain three orders of magnitude less oxygen than their limited reaction processing counterparts grown at 625 °C. The films are thermally stable as well, and do not interdiffuse more than about 20 Å after 950 °C for 20 min. Therefore, they can be processed with standard Si techniques. At 900 °C, the films exhibit growth rates of about 15-20 Å/s. We have also demonstrated the growth of graded layers of Si-Ge, and have determined that a strain gradient exists in these layers.

  19. Frame assisted H2O electrolysis induced H2 bubbling transfer of large area graphene grown by chemical vapor deposition on Cu

    Science.gov (United States)

    de la Rosa, César J. Lockhart; Sun, Jie; Lindvall, Niclas; Cole, Matthew T.; Nam, Youngwoo; Löffler, Markus; Olsson, Eva; Teo, Kenneth B. K.; Yurgens, August

    2013-01-01

    An improved technique for transferring large area graphene grown by chemical vapor deposition on copper is presented. It is based on mechanical separation of the graphene/copper by H2 bubbles during H2O electrolysis, which only takes a few tens of seconds while leaving the copper cathode intact. A semi-rigid plastic frame in combination with thin polymer layer span on graphene gives a convenient way of handling- and avoiding wrinkles and holes in graphene. Optical and electrical characterizations prove the graphene quality is better than that obtained by traditional wet etching transfer. This technique appears to be highly reproducible and cost efficient.

  20. Photoluminescence study of polycrystalline photovoltaic CdS thin film layers grown by close-spaced sublimation and chemical bath deposition.

    OpenAIRE

    Abken, Anke E.; Halliday, D.P.; Durose, Ken

    2009-01-01

    Photoluminescence (PL) measurements were used to study the effect of postdeposition treatments by annealing and CdCl2 activation on polycrystalline CdS layer grown by close-spaced sublimation (CSS) and chemical bath deposition (CBD). CdS films were either annealed in a temperature range of 200–600 °C or CdCl2 treated between 300–550 °C. The development of “red,” “intermediate orange,” “yellow,” and “green” luminescence bands is discussed in comparison with PL assignments found in literature. ...

  1. Ozone deposition to an oat crop ( Avena sativa L.) grown in open-top chambers and in the ambient air

    Science.gov (United States)

    Pleijel, H.; Wallin, G.; Karlsson, P. E.; Skarby, L.; Sellden, G.

    Fluxes and deposition velocities for ozone were determined for open-top chambers with and without an oat crop, and for the adjacent field, using a resistance analogue model and the aerodynamic wind-profile method, respectively. During a period when the canopy was green and the ambient wind speeds modest, the fluxes and deposition velocities were higher in the chamber with plants than in the field crop. The deposition to chamber walls and soil in the chamber only accounted for part of that difference. The deposition velocity for ozone to the crop was light-dependent both in the chamber with plants and in the ambient air. With increasing plant senescence, the deposition velocity declined and the light dependence disappeared. Fluctuations in deposition velocity superimposed on the overall declining trend followed the same temporal pattern in the chambers with and without plants. These fluctuations in deposition velocity may partly be explained by variations in surface wetness. Differences in boundary layer conductance between chamber and ambient, which under certain conditions may significantly influence the validity of the chamber as a test system, were observed.

  2. Optimization of synthesis conditions of PbS thin films grown by chemical bath deposition using response surface methodology

    Energy Technology Data Exchange (ETDEWEB)

    Yücel, Ersin, E-mail: dr.ersinyucel@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey); Yücel, Yasin; Beleli, Buse [Department of Chemistry, Faculty of Arts and Sciences, Mustafa Kemal University, 31034 Hatay (Turkey)

    2015-09-05

    Highlights: • For the first time, RSM and CCD used for optimization of PbS thin film. • Tri-sodium citrate, deposition time and temperature were independent variables. • PbS thin film band gap value was 2.20 eV under the optimum conditions. • Quality of the film was improved after chemometrics optimization. - Abstract: In this study, PbS thin films were synthesized by chemical bath deposition (CBD) under different deposition parameters. Response surface methodology (RSM) was used to optimize synthesis parameters including amount of tri-sodium citrate (0.2–0.8 mL), deposition time (14–34 h) and deposition temperature (26.6–43.4 °C) for deposition of the films. 5-level-3-factor central composite design (CCD) was employed to evaluate effects of the deposition parameters on the response (optical band gap of the films). The significant level of both the main effects and the interaction are investigated by analysis of variance (ANOVA). The film structures were characterized by X-ray diffractometer (XRD). Morphological properties of the films were studied with a scanning electron microscopy (SEM). The optical properties of the films were investigated using a UV–visible spectrophotometer. The optimum amount of tri-sodium citrate, deposition time and deposition temperature were found to be 0.7 mL, 18.07 h and 30 °C respectively. Under these conditions, the experimental band gap of PbS was 2.20 eV, which is quite good correlation with value (1.98 eV) predicted by the model.

  3. Influence of titanium-substrate roughness on Ca–P–O thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ananda Sagari, A.R., E-mail: arsagari@gmail.com [Department of Physics, P.O. Box 35 (YFL), FIN-40014 University of Jyväskylä (Finland); Malm, Jari [Department of Chemistry, P.O. Box 16100, FI-00076 Aalto University, Espoo (Finland); Laitinen, Mikko [Department of Physics, P.O. Box 35 (YFL), FIN-40014 University of Jyväskylä (Finland); Rahkila, Paavo [Department of Biology of Physical Activity, P.O. Box 35, FIN-40014 University of Jyväskylä (Finland); Hongqiang, Ma [Department of Health Sciences, P.O. Box 35 (L), FIN-40014 University of Jyväskylä (Finland); Putkonen, Matti [Department of Chemistry, P.O. Box 16100, FI-00076 Aalto University, Espoo (Finland); Beneq Oy, P.O. Box 262, FI-01511 Vantaa (Finland); Karppinen, Maarit [Department of Chemistry, P.O. Box 16100, FI-00076 Aalto University, Espoo (Finland); Whitlow, Harry J.; Sajavaara, Timo [Department of Physics, P.O. Box 35 (YFL), FIN-40014 University of Jyväskylä (Finland)

    2013-03-01

    Amorphous Ca–P–O films were deposited on titanium substrates using atomic layer deposition, while maintaining a uniform Ca/P pulsing ratio of 6/1 with varying number of atomic layer deposition cycles starting from 10 up to 208. Prior to film deposition the titanium substrates were mechanically abraded using SiC abrasive paper of 600, 1200, 2000 grit size and polished with 3 μm diamond paste to obtain surface roughness R{sub rms} values of 0.31 μm, 0.26 μm, 0.16 μm, and 0.10 μm, respectively. The composition and film thickness of as-deposited amorphous films were studied using Time-Of-Flight Elastic Recoil Detection Analysis. The results showed that uniform films could be deposited on rough metal surfaces with a clear dependence of substrate roughness on the Ca/P atomic ratio of thin films. The in vitro cell-culture studies using MC3T3 mouse osteoblast showed a greater coverage of cells on the surface polished with diamond paste in comparison to rougher surfaces after 24 h culture. No statistically significant difference was observed between Ca–P–O coated and un-coated Ti surfaces for the measured roughness value. The deposited 50 nm thick films did not dissolve during the cell culture experiment. - Highlights: ► Atomic layer deposition of Ca–P–O films on abraded Ti substrate ► Surface analysis using Time-Of-Flight Elastic Recoil Detection Analysis ► Dependence of substrate roughness on the Ca/P atomic ratio of thin films ► An increase in Ca/P atomic ratio with decreasing roughness ► Mouse osteoblast showed greater coverage of cells in polished surface.

  4. Two to six compound thin films by MOCVD for tandem solar cells

    Science.gov (United States)

    Britt, Jeffrey Scott

    Polycrystalline Cd(1-x)Zn(x)S and Hg(x)Zn(1-x)Te films have been deposited on a variety of substrates by MOCVD. Deposition conditions have been adjusted based on measurements of the material properties. Heterojunction solar cells have been formed from these materials and their potential application as the upper member of a tandem solar cell has been examined. The evaluation and optimization of a high efficiency CdTe/CdS solar cell has also been accomplished. Polycrystalline Cd(1-x)Zn(x)S films were deposited at 350-425 C by the reaction between DMCd, DEZn, and the novel source, propanethiol (PM) in a H2 flow. The growth rate and bandgap energy are strongly dependent on the growth temperature, DMCd/DEZn molar ratio, and the II/VI molar ratio. TMAl and octyl-chloride have been introduced into the reaction mixture to lower resistivities to values suitable for device operation. Polycrystalline ZnTe films have been deposited at 270-400 C by the reaction between DIPTe and DMZn or DEZn in a H2 flow. ZnTe films have been deposited by photoenhanced and conventional MOCVD. Polycrystalline Hg(x)Zn(1-x)Te films have been deposited at 350-410 C by the reaction between elemental Hg, DIPTe, and DMZn in a H2 flow. AsH3 was introduced to the reaction mixture to control the resistivity. Heterojunctions have been formed with Cd(1-x)Zn(x)S and ZnSe. The films and junctions have been characterized by x-ray, optical transmission, low temperature photoluminescence, SEM, and electrical measurements. The evaluation and optimization of a CSS CdTe/CdS solar cell has been formed. A technique for the formation of low-resistance contacts to CdTe with HgTe has also been developed. A pre-deposition heat treatment of CdS in H2 has been demonstrated beneficial to the photovoltaic characteristics of the junction. A post-deposition CdCl2 treatment has been shown to have a profound influence on the electrical characteristics of CSS CdTe/CdS junctions. The identification of optical losses in CSS Cd

  5. Ultrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition

    KAUST Repository

    Docherty, Callum J.

    2014-11-25

    We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.

  6. Effects of the oxygen precursor on the electrical and structural properties of HfO2 films grown by atomic layer deposition on Ge

    Science.gov (United States)

    Spiga, S.; Wiemer, C.; Tallarida, G.; Scarel, G.; Ferrari, S.; Seguini, G.; Fanciulli, M.

    2005-09-01

    We report on the growth by atomic layer deposition of HfO2 films on HF-last treated Ge(001) substrates using HfCl4 as a Hf source and either O3 or H2O as oxygen sources. The choice of the oxygen precursor strongly influences the structural, chemical, and electrical properties of the HfO2 films: Those grown using H2O exhibit local epitaxial growth, a large amount of contaminants such as chlorine and carbon, and a large frequency dispersion of the capacitance-voltage (C -V) characteristics. Films grown using O3 are good insulators and exhibit well-shaped C -V curves with a minimum frequency dispersion of the accumulation capacitance. Moreover, they are smoother, less crystallized, and with a lower contaminant content than those grown using H2O. However, the use of O3 leads to the formation of a 2nm thick layer, possibly GeOx, at the HfO2/Ge interface.

  7. A Comparative Study on Structural and Optical Properties of ZnO Micro-Nanorod Arrays Grown on Seed Layers Using Chemical Bath Deposition and Spin Coating Methods

    Directory of Open Access Journals (Sweden)

    Sibel MORKOÇ KARADENİZ

    2016-11-01

    Full Text Available In this study, Zinc Oxide (ZnO seed layers were prepared on Indium Tin Oxide (ITO substrates by using Chemical Bath Deposition (CBD method and Sol-gel Spin Coating (SC method. ZnO micro-nanorod arrays were grown on ZnO seed layers by using Hydrothermal Synthesis method. Seed layer effects of structural and optical properties of ZnO arrays were characterized. X-ray diffractometer (XRD, Scanning Electron Microscopy (SEM and Ultraviolet Visible (UV-Vis Spectrometer were used for analyses. ZnO micro-nanorod arrays consisted of a single crystalline wurtzite ZnO structure for each seed layer. Besides, ZnO rod arrays were grown smoothly and vertically on SC seed layer, while ZnO rod arrays were grown randomly and flower like structures on CBD seed layer. The optical absorbance peaks found at 422 nm wavelength in the visible region for both ZnO arrays. Optical bandgap values were determined by using UV-Vis measurements at 3.12 and 3.15 eV for ZnO micro-nanorod arrays on CBD seed layer and for ZnO micro-nanorod arrays on SC-seed layer respectively.DOI: http://dx.doi.org/10.5755/j01.ms.22.4.13443

  8. High-quality graphene grown on polycrystalline PtRh{sub 20} alloy foils by low pressure chemical vapor deposition and its electrical transport properties

    Energy Technology Data Exchange (ETDEWEB)

    Yang, He; Shen, Chengmin, E-mail: cmshen@iphy.ac.cn; Tian, Yuan; Bao, Lihong; Chen, Peng; Yang, Rong; Yang, Tianzhong; Li, Junjie; Gu, Changzhi; Gao, Hong-Jun [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2016-02-08

    High-quality continuous uniform monolayer graphene was grown on polycrystalline PtRh{sub 20} alloy foils by low pressure chemical vapor deposition. The morphology of graphene was investigated by Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. Analysis results confirm that high quality single-layer graphene was fabricated on PtRh{sub 20} foil at 1050 °C using a lower flux of methane under low pressure. Graphene films were transferred onto the SiO{sub 2}/Si substrate by the bubbling transfer method. The mobility of a test field effect transistor made of the graphene grown on PtRh{sub 20} was measured and reckoned at room temperature, showing that the carrier mobility was about 4000 cm{sup 2} V{sup −1} s{sup −1}. The results indicate that desired quality of single-layer graphene grown on PtRh{sub 20} foils can be obtained by tuning reaction conditions.

  9. Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

    Science.gov (United States)

    Watanabe, Arata; Freedsman, Joseph J.; Urayama, Yuya; Christy, Dennis; Egawa, Takashi

    2015-12-01

    The thermal stabilities of metal-organic chemical vapor deposition-grown lattice-matched InAlN/GaN/Si heterostructures have been reported by using slower and faster growth rates for the InAlN barrier layer in particular. The temperature-dependent surface and two-dimensional electron gas (2-DEG) properties of these heterostructures were investigated by means of atomic force microscopy, photoluminescence excitation spectroscopy, and electrical characterization. Even at the annealing temperature of 850 °C, the InAlN layer grown with a slower growth rate exhibited a smooth surface morphology that resulted in excellent 2-DEG properties for the InAlN/GaN heterostructure. As a result, maximum values for the drain current density (IDS,max) and transconductance (gm,max) of 1.5 A/mm and 346 mS/mm, respectively, were achieved for the high-electron-mobility transistor (HEMT) fabricated on this heterostructure. The InAlN layer grown with a faster growth rate, however, exhibited degradation of the surface morphology at an annealing temperature of 850 °C, which caused compositional in-homogeneities and impacted the 2-DEG properties of the InAlN/GaN heterostructure. Additionally, an HEMT fabricated on this heterostructure yielded lower IDS,max and gm,max values of 1 A/mm and 210 mS/mm, respectively.

  10. Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Mengdi, E-mail: M.Yang@utwente.nl; Aarnink, Antonius A. I.; Kovalgin, Alexey Y.; Gravesteijn, Dirk J.; Wolters, Rob A. M.; Schmitz, Jurriaan [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2016-01-15

    In this work, the authors developed hot-wire assisted atomic layer deposition (HWALD) to deposit tungsten (W) with a tungsten filament heated up to 1700–2000 °C. Atomic hydrogen (at-H) was generated by dissociation of molecular hydrogen (H{sub 2}), which reacted with WF{sub 6} at the substrate to deposit W. The growth behavior was monitored in real time by an in situ spectroscopic ellipsometer. In this work, the authors compare samples with tungsten grown by either HWALD or chemical vapor deposition (CVD) in terms of growth kinetics and properties. For CVD, the samples were made in a mixture of WF{sub 6} and molecular or atomic hydrogen. Resistivity of the WF{sub 6}-H{sub 2} CVD layers was 20 μΩ·cm, whereas for the WF{sub 6}-at-H-CVD layers, it was 28 μΩ·cm. Interestingly, the resistivity was as high as 100 μΩ·cm for the HWALD films, although the tungsten films were 99% pure according to x-ray photoelectron spectroscopy. X-ray diffraction reveals that the HWALD W was crystallized as β-W, whereas both CVD films were in the α-W phase.

  11. Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    GaN epifilms are grown on the patterned sapphire substrates (PSS) (0001) and the conventional sapphire substrates (CSS) (0001) by metal-organic chemical vapor deposition (MOCVD) using a novel two-step growth. High resolution X-ray diffraction (HR-XRD) is used to investigate the threading dislocation (TD) density of the GaN epifilms. The TD density is calculated from the ω-scans full width at half maximum (FWHM) results of HR-XRD. The edge dislocation destiny of GaN grown on the PSS is 2.7×108 cm-2, which is less than on the CSS. This is confirmed by the results of atomic force microscopy (AFM) measurement. The lower TD destiny indicates that the crystalline quality of the GaN epifilms grown on the PSS is improved compared to GaN epifilms grown on the CSS. The residual strains of GaN grown on the PSS and CSS are compared by Raman Scattering spectra. It is clearly seen that the residual strain in the GaN grown on PSS is lower than on the CSS.

  12. Comparative study of deep levels in HVPE and MOCVD GaN by combining O-DLTS and pulsed photo-ionization spectroscopy

    Science.gov (United States)

    Pavlov, J.; Čeponis, T.; Gaubas, E.; Meskauskaite, D.; Reklaitis, I.; Vaitkus, J.; Grigonis, R.; Sirutkaitis, V.

    2015-12-01

    Operational characteristics of sensors made of GaN significantly depend on technologically introduced defects acting as rapid traps of excess carriers which reduce charge collection efficiency of detectors. In order to reveal the prevailing defects in HVPE and MOCVD grown GaN, the carrier lifetime and photo-ionization spectra have been simultaneously measured by using microwave probed photo-conductivity transient technique. Several traps ascribed to impurities as well as vacancy and anti-site type defects have been identified in HVPE GaN material samples by combining photo-ionization and electron spin resonance spectroscopy. The optical deep level transient spectroscopy technique has been applied for spectroscopy of the parameters of thermal emission from the traps ascribed to technological defects in the Schottky barrier terrace structures fabricated on MOCVD GaN.

  13. Structure and photoluminescence of the TiO2 films grown by atomic layer deposition using tetrakis-dimethylamino titanium and ozone.

    Science.gov (United States)

    Jin, Chunyan; Liu, Ben; Lei, Zhongxiang; Sun, Jiaming

    2015-01-01

    TiO2 films were grown on silicon substrates by atomic layer deposition (ALD) using tetrakis-dimethylamino titanium and ozone. Amorphous TiO2 film was deposited at a low substrate temperature of 165°C, and anatase TiO2 film was grown at 250°C. The amorphous TiO2 film crystallizes to anatase TiO2 phase with annealing temperature ranged from 300°C to 1,100°C in N2 atmosphere, while the anatase TiO2 film transforms into rutile phase at a temperature of 1,000°C. Photoluminescence from anatase TiO2 films contains a red band at 600 nm and a green band at around 515 nm. The red band exhibits a strong correlation with defects of the under-coordinated Ti(3+) ions, and the green band shows a close relationship with the oxygen vacancies on (101) oriented anatase crystal surface. A blue shift of the photoluminescence spectra reveals that the defects of under-coordinated Ti(3+) ions transform to surface oxygen vacancies in the anatase TiO2 film annealing at temperature from 800°C to 900°C in N2 atmosphere.

  14. LaMnO3 thin films grown by using pulsed laser deposition and their simple recovery to a stoichiometric phase by annealing

    Energy Technology Data Exchange (ETDEWEB)

    Choi, W. S. [Seoul National University; Jeong, D. W. [Seoul National University; Jang, S. Y. [Seoul National University; Marton, Zsolt [ORNL; Seo, Sung Seok A [ORNL; Lee, Ho Nyung [ORNL; Lee, Y. S. [Soongsil University, Korea

    2011-01-01

    We systematically investigated various physical properties of epitaxial LaMnO{sub 3} thin films fabricated on SrTiO{sub 3} substrate by using pulsed laser deposition. In particular, we observed drastic changes in their properties when the as-grown films were annealed in a reduced-oxygen atmosphere. Whereas the as-grown LaMnO{sub 3} film showed ferromagnetic and semiconducting properties with a small optical band gap, the LaMnO{sub 3} films annealed at temperature higher than 700 C showed antiferromagnetic and insulating properties with an enlarged band gap. The optical features also changed drastically, in that the optical transition peak shifted to a higher energy with additional fine structures. Such changes were made in a direction such that the LaMnO{sub 3} films were more stoichiometric, indicating that the stoichiometric phase could be recovered by simple annealing of the pulsed-laser-deposited films. Finally, possibilities of the polar catastrophe scenario at the interface between LaMnO{sub 3} and SrTiO{sub 3} are briefly discussed.

  15. Effect of annealing on structural and optical properties of Cu{sub 2}ZnSnS{sub 4} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Surgina, G.D., E-mail: silvereye@bk.ru [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation); Nevolin, V.N. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow 119991 (Russian Federation); Sipaylo, I.P.; Teterin, P.E. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Medvedeva, S.S. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Lebedinsky, Yu.Yu.; Zenkevich, A.V. [National Research Nuclear University “Moscow Engineering Physics Institute”, Moscow 115409 (Russian Federation); Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region 141700 (Russian Federation)

    2015-11-02

    In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films grown by reactive Pulsed Laser Deposition in H{sub 2}S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N{sub 2} at the optimized conditions. - Highlights: • Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H{sub 2}S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N{sub 2} effectively inhibits the formation of Sn{sub x}S secondary phases.

  16. Emerging photoluminescence from bilayer large-area 2D MoS2 films grown by pulsed laser deposition on different substrates

    Science.gov (United States)

    Barvat, Arun; Prakash, Nisha; Satpati, Biswarup; Singha, Shib Shankar; Kumar, Gaurav; Singh, Dilip K.; Dogra, Anjana; Khanna, Suraj P.; Singha, Achintya; Pal, Prabir

    2017-07-01

    We report the growth of continuous large area bilayer films of MoS2 on different substrates by pulsed laser deposition (PLD). The growth parameters for PLD were modified in such a way that results in bilayer 2D-MoS2 films on both c-Al2O3 (0001) (sapphire) and SiO2/Si (SO) substrates. The bilayer large area crystalline nature of growth in the 2 H-phase is determined by Raman spectroscopy. Cross-sectional transmission electron microscopy confirms the distinct thinnest ordered layered structure of MoS2. Chemical analysis reveals an almost stoichiometric 2 H-phase on both the substrates. The photoluminescence intensities of both the films match very well with those of the corresponding exfoliated flakes, as well as chemical vapor deposited (CVD) films as reported in the literature. The in-situ post growth annealing with optimal film thickness acts as a solid phase epitaxy process which provides continuous crystalline layers with a smooth interface and regulates the photoluminescence properties. In contrast, the PLD grown MoS2 monolayer shows poor crystalline quality and non-uniform coverage compared to that with the exfoliated and CVD grown films.

  17. The MOCVD challenge a survey of GaInAsp-InP and GaInAsp-GaAs for photonic and electronic device applications

    CERN Document Server

    Razeghi, Manijeh

    2010-01-01

    Introduction to Semiconductor Compounds III-V semiconductor alloys III-V semiconductor devices Technology of multilayer growth Growth Technology Metalorganic chemical vapor deposition New non-equilibrium growth techniques In situ Characterization during MOCVD Reflectance anisotropy and ellipsometry Optimization of the growth of III-V binaries by RDS RDS investigation of III-V lattice-matched heterojunctions RDS investigation of III-V lattice-mismatched structures Insights on the growt

  18. Pulsed-source MOCVD of high-k dielectric thin films with in situ monitoring by spectroscopic ellipsometry

    CERN Document Server

    Tsuchiya, Y; Tung, R T; Oda, S; Kurosawa, M; Hattori, T

    2003-01-01

    The formation of high-k thin films by pulsed-source metal-organic chemical vapor deposition (MOCVD) has been investigated with in situ spectroscopic ellipsometry. It is demonstrated that spectroscopic ellipsometry is an effective method for in situ monitoring of the fabrication of high-k dielectric thin films with thicknesses of several nm's. Thin yttrium oxide films with average roughnesses smaller than the thickness of a single molecular layer, and with a capacitance equivalent thickness approx 1.7 nm were obtained. Thicknesses and optical properties of each individual layer were also extracted from spectroscopic ellipsometry, by fitting to appropriate structural models. (author)

  19. Photocatalysis in the visible range of sub-stoichiometric anatase films prepared by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Justicia, I. [ICMAB/CSIC, Campus UAB, 08193 Bellaterra (Spain); Garcia, G. [ICMAB/CSIC, Campus UAB, 08193 Bellaterra (Spain)]. E-mail: gemma@icmab.es; Battiston, G.A. [ICIS/CNR, Corso Stati Uniti 4, 35127 Padova (Italy); Gerbasi, R. [ICIS/CNR, Corso Stati Uniti 4, 35127 Padova (Italy); Ager, F. [CNA/CSIC Parque Tecnologico Cartuja 93, Avda Thomas A, Edison, 41092 Sevilla (Spain); Guerra, M. [IIQAB/CSIC Jordi Girona, 18 08034 Barcelona (Spain); Caixach, J. [IIQAB/CSIC Jordi Girona, 18 08034 Barcelona (Spain); Pardo, J.A. [ICMAB/CSIC, Campus UAB, 08193 Bellaterra (Spain); Rivera, J. [IIQAB/CSIC Jordi Girona, 18 08034 Barcelona (Spain); Figueras, A. [ICMAB/CSIC, Campus UAB, 08193 Bellaterra (Spain); Instituto de Fisica, UNAM, Campus UNAM Juriquilla, 76230 Queretaro (Mexico)

    2005-08-25

    Anatase phase of titanium oxide is the most promising photocatalyst material for organic pollutant degradation. However, due to its large band gap energy (3.2 eV) it is not viable to use sunlight as an energy source for the photocatalysis activation, and so, ultraviolet (UV) radiation below the wavelength of 380 nm is required. This paper focuses on the experimental demonstration of the reduction of this large band gap energy by inducing defects in the anatase structure under the form of oxygen sub-stoichiometry. TiO{sub 2} thin films were prepared in a metal organic chemical vapour deposition (MOCVD) reactor. The samples stoichiometry was measured by the Rutherford backscattering spectrometry (RBS) technique. Optical characterisation was also performed and the photodegradation activity in the visible range was tested using nonylphenol, which is one of the most harmful pollutants present in waste waters.

  20. Synthesis and Characterization of Pr(DPM)3 Served as Precursor for MOCVD

    Institute of Scientific and Technical Information of China (English)

    LIU Ming-fei; HU Yong-xing; JIANG Yin-zhu; GAO Jian-feng; WANG Yan-yan; MENG Guang-yao

    2007-01-01

    Praseodymium β-diketone chelate, Pr(DPM) 3 [DPM=2,2,6,6-tetramethyl-3,5-heptanedionato], was successfully synthesized from the inorganic salt praseodymium chloride and HDPM(2,2,6,6-tetramethyl-3,5-heptane-dione) in an ethanol/aqueous solution followed distillation at low pressure and recrystallization from toluene. The physical and thermal properties of the chelate, including volatility, stability, and thermal decomposition, were investigated by elemental analyses, 1H NMR spectroscopy, XRD, TG/DTG/DTA analysis, infrared spectroscopy, and mass spectroscopy. The chelate with high purity prepared by the authors of this study also shows sufficient volatility and stability in inert gases, which could be used as the precursor for metal-organic chemical vapor deposition(MOCVD).

  1. Effect of Annealing Temperature on Flowerlike Cu3BiS3 Thin Films Grown by Chemical Bath Deposition

    Science.gov (United States)

    Deshmukh, S. G.; Patel, S. J.; Patel, K. K.; Panchal, A. K.; Kheraj, Vipul

    2017-10-01

    For widespread application of thin-film photovoltaic solar cells, synthesis of inexpensive absorber material is essential. In this work, deposition of ternary Cu3BiS3 absorber material, which contains abundant and environmentally benign elements, was carried out on glass substrate. Flowerlike Cu3BiS3 thin films with nanoflakes as building block were formed on glass substrate by chemical bath deposition. These films were annealed at 573 K and 673 K in sulfur ambient for structural improvement. Their structure was characterized using Raman spectroscopy, as well as their surface morphological and optical properties. The x-ray diffraction profile of as-deposited Cu3BiS3 thin film revealed amorphous structure, which transformed to orthorhombic phase after annealing. The Raman spectrum exhibited a characteristic peak at 290 cm-1. Scanning electron microscopy of as-deposited Cu3BiS3 film confirmed formation of nanoflowers with diameter of around 1052 nm. Wettability testing of as-deposited Cu3BiS3 thin film demonstrated hydrophobic nature, which became hydrophilic after annealing. The measured ultraviolet-visible (UV-Vis) absorption spectra of the Cu3BiS3 thin films gave an absorption coefficient of 105 cm-1 and direct optical bandgap of about 1.42 eV after annealing treatment. Based on all these results, such Cu3BiS3 material may have potential applications in the photovoltaic field as an absorber layer.

  2. Characteristics of Al-doped ZnO films grown by atomic layer deposition for silicon nanowire photovoltaic device.

    Science.gov (United States)

    Oh, Byeong-Yun; Han, Jin-Woo; Seo, Dae-Shik; Kim, Kwang-Young; Baek, Seong-Ho; Jang, Hwan Soo; Kim, Jae Hyun

    2012-07-01

    We report the structural, electrical, and optical characteristics of Al-doped ZnO (ZnO:Al) films deposited on glass by atomic layer deposition (ALD) with various Al2O3 film contents for use as transparent electrodes. Unlike films fabricated by a sputtering method, the diffraction peak position of the films deposited by ALD progressively moved to a higher angle with increasing Al2O3 film content. This indicates that Zn sites were effectively replaced by Al, due to layer-by-layer growth mechanism of ALD process which is based on alternate self-limiting surface chemical reactions. By adjusting the Al2O3 film content, a ZnO:Al film with low electrical resistivity (9.84 x 10(-4) Omega cm) was obtained at an Al2O3 film content of 3.17%, where the Al concentration, carrier mobility, optical transmittance, and bandgap energy were 2.8 wt%, 11.20 cm2 V(-1) s(-1), 94.23%, and 3.6 eV, respectively. Moreover, the estimated figure of merit value of our best sample was 8.2 m7Omega(-1). These results suggest that ZnO:Al films deposited by ALD could be useful for electronic devices in which especially require 3-dimensional conformal deposition of the transparent electrode and surface passivation.

  3. Effect of substrate temperature on microstructural and optical properties of ZnO films grown by pulsed laser deposition

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    ZnO thin films were deposited on n-Si (111) at various substrate temperatures by pulsed laser deposition (PLD).X-ray diffraction (XRD), photoluminescence (PL), Fourier transform infrared spectrophotometer (FTIR), and scanning electron microscopy (SEM) were used to analyze the structure, morphology, and optical property of the ZnO thin films. An optimal crystallized ZnO thin film was obtained at the substrate temperature of 600℃. A blue shift was found in PL spectra due to size confinement effect as the grain sizes decreased. The surfaces of the ZnO thin films were more planar and compact as the substrate temperature increased.

  4. Malonate complexes of dysprosium: synthesis, characterization and application for LI-MOCVD of dysprosium containing thin films.

    Science.gov (United States)

    Milanov, Andrian P; Seidel, Rüdiger W; Barreca, Davide; Gasparotto, Alberto; Winter, Manuela; Feydt, Jürgen; Irsen, Stephan; Becker, Hans-Werner; Devi, Anjana

    2011-01-07

    A series of malonate complexes of dysprosium were synthesized as potential metalorganic precursors for Dy containing oxide thin films using chemical vapor deposition (CVD) related techniques. The steric bulkiness of the dialkylmalonato ligand employed was systematically varied and its influence on the resulting structural and physico-chemical properties that is relevant for MOCVD was studied. Single crystal X-ray diffraction analysis revealed that the five homoleptic tris-malonato Dy complexes (1-5) are dimers with distorted square-face bicapped trigonal-prismatic geometry and a coordination number of eight. In an attempt to decrease the nuclearity and increase the solubility of the complexes in various solvents, the focus was to react these dimeric complexes with Lewis bases such as 2,2'-biypridyl and pyridine (6-9). This resulted in monomeric tris-malonato mono Lewis base adduct complexes with improved thermal properties. Finally considering the ease of synthesis, the monomeric nature and promising thermal characteristics, the silymalonate adduct complex [Dy(dsml)(3)bipy] (8) was selected as single source precursor for growing DySi(x)O(y) thin films by liquid injection metalorganic chemical vapor deposition (LI-MOCVD) process. The as-deposited films were analyzed for their morphology and composition by scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, Rutherford backscattering (RBS) analysis and X-ray photoelectron spectroscopy.

  5. Use of calcination in exposing the entrapped Fe particles from multi-walled carbon nanotubes grown by chemical vapour deposition

    CSIR Research Space (South Africa)

    Kesavan Pillai, Sreejarani

    2009-03-01

    Full Text Available Multi-walled carbon nanotubes (MWCNTs) were synthesized by a chemical vapour deposition method. The effect of calcination at temperatures ranging from 300 to 550°C in exposing the metal nanoparticles within the nanotube bundles was studied...

  6. Morphology, composition and electrical properties of SnO{sub 2}:Cl thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Hsyi-En, E-mail: sean@mail.stust.edu.tw; Wen, Chia-Hui; Hsu, Ching-Ming [Department of Electro-Optical Engineering, Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan (China)

    2016-01-15

    Chlorine doped SnO{sub 2} thin films were prepared using atomic layer deposition at temperatures between 300 and 450 °C using SnCl{sub 4} and H{sub 2}O as the reactants. Composition, structure, surface morphology, and electrical properties of the as-deposited films were examined. Results showed that the as-deposited SnO{sub 2} films all exhibited rutile structure with [O]/[Sn] ratios between 1.35 and 1.40. The electrical conductivity was found independent on [O]/[Sn] ratio but dependent on chlorine doping concentration, grain size, and surface morphology. The 300 °C-deposited film performed a higher electrical conductivity of 315 S/cm due to its higher chlorine doping level, larger grain size, and smoother film surface. The existence of Sn{sup 2+} oxidation state was demonstrated to minimize the effects of chlorine on raising the electrical conductivity of films.

  7. Atomic layer deposition grown MO{sub x} thin films for solar water splitting: Prospects and challenges

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Trilok; Lehnen, Thomas; Leuning, Tessa; Mathur, Sanjay, E-mail: sanjay.mathur@uni-koeln.de [Institute of Inorganic Chemistry, University of Cologne, Greinstrasse 6, D-50939 Cologne (Germany)

    2015-01-15

    The magnitude of energy challenge not only calls for efficient devices but also for abundant, inexpensive, and stable photoactive materials that can enable efficient light harvesting, charge separation and collection, as well as chemical transformations. Photoelectrochemical systems based on semiconductor materials have the possibility to transform solar energy directly into chemical energy the so-called “solar hydrogen.” The current challenge lies in the harvesting of a larger fraction of electromagnetic spectrum by enhancing the absorbance of electrode materials. In this context, atomically precise thin films of metal oxide semiconductors and their multilayered junctions are promising candidates to integrate high surface areas with well-defined electrode–substrate interface. Given its self-limited growth mechanism, the atomic layer deposition (ALD) technique offers a wide range of capabilities to deposit and modify materials at the nanoscale. In addition, it opens new frontiers for developing precursor chemistry that is inevitable to design new processes. Herein, the authors review the properties and potential of metal oxide thin films deposited by ALD for their application in photoelectrochemical water splitting application. The first part of the review covers the basics of ALD processes followed by a brief discussion on the electrochemistry of water splitting reaction. The second part focuses on different MO{sub x} films deposited by atomic layer deposition for water splitting applications; in this section, The authors discuss the most explored MO{sub x} semiconductors, namely, Fe{sub 2}O{sub 3}, TiO{sub 2}, WO{sub 3}, and ZnO, as active materials and refer to their application as protective coatings, conductive scaffolds, or in heterojunctions. The third part deals with the current challenges and future prospects of ALD processed MO{sub x} thin films for water splitting reactions.

  8. High critical current density under magnetic fields in as-grown MgB{sub 2} thin films deposited by molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Haruta, M [Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555 (Japan); Fujiyoshi, T [Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555 (Japan); Kihara, S [Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555 (Japan); Sueyoshi, T [Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555 (Japan); Miyahara, K [Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555 (Japan); Harada, Y [Iwate Industry Promotion Centre, Iioka-shinden 3-35-2, Morioka, Iwate 020-0852 (Japan); Yoshizawa, M [Graduate School of Engineering, Iwate University, Ueda 4-3-5, Morioka, Iwate 020-8551 (Japan); Takahashi, T [Graduate School of Engineering, Iwate University, Ueda 4-3-5, Morioka, Iwate 020-8551 (Japan); Iriuda, H [Graduate School of Engineering, Iwate University, Ueda 4-3-5, Morioka, Iwate 020-8551 (Japan); Oba, T [Graduate School of Engineering, Iwate University, Ueda 4-3-5, Morioka, Iwate 020-8551 (Japan); Awaji, S [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Watanabe, K [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Miyagawa, R [Kumamoto Industrial Research Institute, 3-11-38 Higashi-machi, Kumamoto 862-0901 (Japan)

    2007-01-15

    As-grown MgB{sub 2} thin films were prepared by a MBE method under the conditions of low temperature, low deposition rate and high vacuum for applications in electric devices. The MgB{sub 2} thin films deposited on MgO and Ti buffered ZnO substrates have considerably higher J{sub c} under magnetic fields among MgB{sub 2} thin films reported before. The value of J{sub c} for the MgB{sub 2} thin film deposited on Ti buffered ZnO has been 5.8 x 10{sup 5} A cm{sup -2} at 10 K, 5 T in the magnetic field applied parallel to the c axis. In the angular dependence of J{sub c}, the peak of J{sub c} attributable to c-axis-correlated pinning centres has been observed when the magnetic field was applied parallel to the c axis. (rapid communication)

  9. Influence of annealing in H atmosphere on the electrical properties of Al2O3 layers grown on p-type Si by the atomic layer deposition technique

    Science.gov (United States)

    Kolkovsky, Vl.; Stübner, R.; Langa, S.; Wende, U.; Kaiser, B.; Conrad, H.; Schenk, H.

    2016-09-01

    In the present study the electrical properties of 100 nm and 400 nm alumina films grown by the atomic layer deposition technique on p-type Si before and after a post-deposition annealing at 440 °C and after a dc H plasma treatment at different temperatures are investigated. We show that the density of interface states is below 2 × 1010 cm-2 in these samples and this value is significantly lower compared to that reported previously in thinner alumina layers (below 50 nm). The effective minority carrier lifetime τg,eff and the effective surface recombination velocity seff in untreated p-type Si samples with 100 nm and 400 nm aluminum oxide is comparable with those obtained after thermal oxidation of 90 nm SiO2. Both, a post-deposition annealing in forming gas (nitrogen/hydrogen) at elevated temperatures and a dc H-plasma treatment at temperatures close to room temperature lead to the introduction of negatively charged defects in alumina films. The results obtained in samples annealed in different atmospheres at different temperatures or subjected to a dc H plasma treatment allow us to correlate these centers with H-related defects. By comparing with theory we tentatively assign them to negatively charged interstitial H atoms.

  10. Atomic force microscopy studies of homoepitaxial GaN layers grown on GaN template by laser MBE

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, B. S. [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India); Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Singh, A.; Tyagi, P. K. [Department of Applied Physics, Delhi Technological University, Delhi 110042 (India); Tanwar, S. [Rajasthan Technical University, Rawatbhata Road, Kota 324010 (India); Kumar, M. Senthil; Kushvaha, S. S., E-mail: kushvahas@nplindia.org [CSIR-National Physical Laboratory, Dr K.S. Krishnan Road, New Delhi 110012 (India)

    2016-04-13

    We have grown homoepitaxial GaN films on metal organic chemical vapor deposition (MOCVD) grown 3.5 µm thick GaN on sapphire (0001) substrate (GaN template) using an ultra-high vacuum (UHV) laser assisted molecular beam epitaxy (LMBE) system. The GaN films were grown by laser ablating a polycrystalline solid GaN target in the presence of active r.f. nitrogen plasma. The influence of laser repetition rates (10-30 Hz) on the surface morphology of homoepitaxial GaN layers have been studied using atomic force microscopy. It was found that GaN layer grown at 10 Hz shows a smooth surface with uniform grain size compared to the rough surface with irregular shape grains obtained at 30 Hz. The variation of surface roughness of the homoepitaxial GaN layer with and without wet chemical etching has been also studied and it was observed that the roughness of the film decreased after wet etching due to the curved structure/rough surface.

  11. Perspective: Highly ordered MoS2 thin films grown by multi-step chemical vapor deposition process

    Directory of Open Access Journals (Sweden)

    S. N. Heo

    2016-03-01

    Full Text Available We established a process for growing highly ordered MoS2 thin films. The process consists of four steps: MoO3 thermal evaporation, first annealing, sulfurization, and second annealing. The main feature of this process is that thermally deposited MoO3 thin films are employed as a precursor for the MoS2 films. The first deposition step enabled us to achieve precise control of the resulting thickness of the MoS2 films with high uniformity. The crystalline structures, surface morphologies, and chemical states at each step were characterized by X-ray diffraction, atomic force microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. Based on these characterizations and a careful optimization of the growth conditions, we successfully produced a highly oriented MoS2 thin film with a thickness of five monolayers over an entire one-centimeter-square sapphire substrate.

  12. Structural and optical properties of Cu-doped CdTe films with hexagonal phase grown by pulsed laser deposition

    Directory of Open Access Journals (Sweden)

    F. de Moure-Flores

    2012-06-01

    Full Text Available Cu-doped CdTe thin films were prepared by pulsed laser deposition on Corning glass substrates using powders as target. Films were deposited at substrate temperatures ranging from 100 to 300 °C. The X-ray diffraction shows that both the Cu-doping and the increase in the substrate temperature promote the presence of the hexagonal CdTe phase. For a substrate temperature of 300 °C a CdTe:Cu film with hexagonal phase was obtained. Raman and EDS analysis indicate that the films grew with an excess of Te, which indicates that CdTe:Cu films have p-type conductivity.

  13. Stress relief patterns of hydrogenated amorphous carbon films grown by dc-pulse plasma chemical vapor deposition

    Science.gov (United States)

    Wang, Qi; Wang, Chengbing; Wang, Zhou; Zhang, Junyan; He, Deyan

    2008-12-01

    Hydrogenated amorphous carbon films were prepared on Si (1 0 0) substrates by dc-pulse plasma chemical vapor deposition. The nature of the deposited films was characterized by Raman spectra and the stress relief patterns were observed by scanning electron microscope. Besides the well-known sinusoidal type and flower type patterns, etc., two different stress relief patterns, ring type and peg-top shape with exiguous tine on the top, were observed. The ring type in this paper was a clear ridge-cracked buckle and unusual. Two competing buckle delamination morphologies ring and sinusoidal buckling coexist. The ridge-cracked buckle in ring type was narrower than the sinusoidal buckling. Meanwhile peg-top shape with exiguous tine on the top in this paper was unusual. These different patterns supported the approach in which the stress relief forms have been analyzed using the theory of plate buckling.

  14. Surface morphology and structure of ultra-thin magnesium oxide grown on (100) silicon by atomic layer deposition oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Rochdi, N., E-mail: rochdi.nabil@gmail.com [Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), CNRS UPR 3118, Aix-Marseille Universite, Case 913, Campus de Luminy, 13288 Marseille cedex 9 (France); Liudvikouskaya, K. [Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220013 Minsk (Belarus); Descoins, M.; Raissi, M.; Coudreau, C.; Lazzari, J.-L. [Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), CNRS UPR 3118, Aix-Marseille Universite, Case 913, Campus de Luminy, 13288 Marseille cedex 9 (France); Oughaddou, H. [Commissariat a l' Energie Atomique, DSM-IRAMIS-SPCSI, Bat. 462, Saclay, 91191, Gif-sur-Yvette cedex (France); Universite de Cergy-Pontoise, LAMAp, 95000 Cergy-Pontoise cedex (France); D' Avitaya, F. Arnaud [Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), CNRS UPR 3118, Aix-Marseille Universite, Case 913, Campus de Luminy, 13288 Marseille cedex 9 (France)

    2011-07-29

    Ultra-thin magnesium oxide layers were elaborated by atomic layer deposition and oxidation process on silicon (100) starting from (2 x 1) thermally-reconstructed or hydrogen-terminated Si surfaces. Low-energy electron diffraction experiments show (2 x 3) and (3 x 3) reconstructions while depositing a magnesium monolayer on Si clean surfaces, and a 3-dimentional growth of the oxide as confirmed by ex-situ atomic force microscopy. For hydrogen-terminated or clean surfaces previously physisorbed by oxygen, uniform cobalt/magnesium-oxide/silicon stacks of layers are observed by transmission electron microscopy. Annealing above 150 deg. C leads to MgO dissolution and formation of an interfacial complex compound by inter-diffusion of Si and Co.

  15. Properties of ZnO thin films grown at room temperature by using ionized cluster beam deposition

    CERN Document Server

    Whangbo, S W; Kim, S G; Cho, M H; Jeong, K H; Whang, C N

    2000-01-01

    ZnO films with a thickness of 120 nm were deposited on Si(100) at room temperature by using the reactive-ionized cluster beam deposition technique. The effects of the acceleration voltage (V sub a) on the properties, such as the crystallinity, the induced film strain, the surface roughness, and the electrical and the optical properties of the films, were investigated. The ZnO films had only a (002) crystalline orientation and uniformly composed through the whole thickness. As the V sub a increased, more strain was induced in the film, and the packing density caused by the structural imperfection was lowered. The films prepared under the optimum condition (V sub a = 3 kV) on a glass substrate showed good optical transmittance, and the band-gap of the film was evaluated to be 3.32 eV.

  16. Optical and Micro-Structural Properties of ZnO Thin Films Grown on Silicon Substrate by Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    ZnO thin films were deposited on n-Si (111) at various substrate temperatures and oxygen pressures by pulsed laser deposition (PLD) using a Nd∶YAG laser with the wavelength of 1064 nm. X-ray diffraction (XRD), photoluminescence (PL), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to analyze the microstructure, optical property and morphology of the ZnO thin films. A comparatively optimal crystallized ZnO thin film was obtained at the substrate temperature of 600 ℃ in oxygen pressure of 50 mTorr. The intensity of the luminescence strongly depends on the stoichiometry of the film as well as the crystalline quality.

  17. Chemical Oxidation of La2CuO4 Epitaxial Thin Films Grown by Pulsed Laser Deposition

    Institute of Scientific and Technical Information of China (English)

    WANG Chun-Chang; YAN Yun-Jie; ZHU Jing

    2007-01-01

    Chemical oxidation is used to induce superconductivity in La2CuO4 expitaxial thin films fabricated by pulsed laser deposition technique. Details about the influence of oxidation time on structural, surface morphology, Raman spectra, and electrical properties have been investigated. The results convince that successful uptake of oxygen occurs in the oxidized films, and the content of the inserted oxygen increases with increasing oxidation interval. The possible mechanism for the excess oxygen insertion into the film is also discussed.

  18. CdTe:Ge/Si (100) thin films grown by pulsed laser deposition (PLD) for photonic devices

    Science.gov (United States)

    Neretina, S.; Hughes, R. A.; Preston, J. S.; Sochinskii, N. V.; Mascher, P.

    2005-09-01

    Cadmium Telluride (CdTe) is a well known photonic material in the fields of infrared imaging and solar cells. Its nonlinear optical properties also make it a promising candidate for novel telecom applications that would utilize its high Kerr coefficient to produce advanced logical devices such as switches, routers and wavelength converters. The large photorefractive effect observed in CdTe also makes possible high-speed devices suitable for optical data processing. In order to advance such photorefractive waveguide applications, we have deposited CdTe films on silicon substrates with a native oxide layer using the pulsed laser deposition technique (PLD). Silicon was chosen as the substrate material as it is suitable for the monolithic integration of logical devices. Maintaining an oxide layer was deemed necessary as a high refractive index mismatch is desirable for high-index contrast waveguide based applications and such an index mismatch could be provided by a reasonably thick layer of SiO2. Films exhibiting some structural deficiencies, but with high optical quality were deposited through the optimization of the growth parameters. X-ray diffraction data indicates that the films are [111] oriented with rocking curves of substantial width. Atomic force microscopy images confirm that the films have a smooth surface morphology as was suggested by their mirror-like appearance. Using the optimum growth conditions, CdTe films doped with germanium were also deposited as this dopant introduces deep donor levels that enhance the photorefractive effect. A comparison of the optical properties obtained from the doped and undoped films indicate that impurities can have a marked effect on the index of refraction and extinction coefficient. Such alterations to the optical constants must be considered in the design of waveguide structures.

  19. Metalorganic Chemical Vapor Deposition and Its Application to the Growth of the Heterostructure Hot Electron Diode.

    Science.gov (United States)

    1988-03-01

    shown to be germanium , silicon , tin, sulfur, tellurium, carbon and zinc.39 The highest 77K mobility reported for MOCVD grown GaAs is 190,000 cm2 /v-s...FIELD GROUP SUB-GROUP I MOCVD, OMVPE, NDR , negative differential resistance 9- ABSTRACT (Continue on reverse if neceary and identify by block number...terminal electronic device that exhibits S-shaped negative differential resistance ( NDR ) in the dc I-V characteristic. The proposed switching

  20. Cu and Cu{sub 2}O films with semi-spherical particles grown by electrochemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Jin You; Jadhav, Abhijit P.; Song, Guang; Kim, Chang Woo; Kang, Young Soo, E-mail: yskang@sogang.ac.kr

    2012-12-01

    Cu and Cu{sub 2}O films can be prepared on indium-doped tin oxide glass substrates by simple electrodeposition in a solution containing 0.1 M Cu(NO{sub 3}){sub 2} and 3 M lactic acid at different pH values. At low pH (pH = 1.2), the uniform Cu films were obtained; when pH {>=} 7, the pure Cu{sub 2}O films can be deposited. Especially, at pH = 11, the deposited Cu{sub 2}O films exhibited cubic surface morphology exposing mainly {l_brace}100{r_brace} plane; in contrast, the films consisting of semi-spherical particles were obtained when the solution was being stirred for 2 weeks prior to use. The possible growth process and mechanism were comparatively discussed. - Highlights: Black-Right-Pointing-Pointer Cu and Cu{sub 2}O films were prepared by facile electrodeposition. Black-Right-Pointing-Pointer Electrodeposition was preformed in electrolyte at different pH values. Black-Right-Pointing-Pointer Dendritic Cu films were obtained at 1.2 pH with relatively high deposition potential. Black-Right-Pointing-Pointer Semi-spherical Cu{sub 2}O films were obtained with solution at 11 pH and stirred for 2 weeks. Black-Right-Pointing-Pointer The possible growth mechanism of semi-spherical Cu{sub 2}O films was discussed.

  1. Room-Temperature Ferromagnetism of Ga1-xMnxN Grown by Low-Pressure Metalorganic Chemical Vapour Deposition

    Institute of Scientific and Technical Information of China (English)

    CHEN Zhi-Tao; ZHANG Guo-Yi; SU Yue-Yong; YANG Zhi-Jian; ZHANG Yan; ZHANG Bin; GUO Li-Ping; XU Ke; PAN Yao-Bao; ZHANG Han

    2006-01-01

    @@ Epitaxial films of Ga1-xMnxN have been grown on c-sapphire substrates by low-pressure metal-organic vapour phase epitaxy. The samples show ferromagnetic behaviour up to a temperature of T = 380 K with hysteresis curves showing a coercivity of 50-100Oe. No ferromagnetic second phases and no significant deterioration in crystal quality with the incorporation of Mn can be detected by high-resolution x-ray diffraction. The result of x-ray absorption near-edge structures indicates that Mn atoms substitute for Ga atoms. The Mn concentrations of the layers are determined to reach x = 0.038 by proton-induced x-ray emission.

  2. {alpha} Fe{sub 2}O{sub 3} films grown by the spin-on sol-gel deposition method

    Energy Technology Data Exchange (ETDEWEB)

    Avila G, A.; Carbajal F, G. [Seccion de Electronica del Estado Solido, Departamento de Ingenieria Electrica, CINVESTAV del l.P.N., Av. I.P.N. No. 2508, Apartado Postal 14-740, Mexico 07360, D.F (Mexico); Tiburcio S, A. [Division Posg, lnstituto Tecnologico de Toluca-SEP, P.O. Box 890, 50000 Toluca, Edo. Mex. (Mexico); Barrera C, E. [Departamento de IPH, Area de Ingenieria en Recursos Energeticos, Universidad Autonoma Metropolitana-lztapalapa, Apartado Postal 55-5340, Mexico, D.F. (Mexico); Andrade I, E. [Instituto de Fsica, Universidad Nacional Autononca de Mexico, Apartado Postal 20-364, Mexico 01000, D. F (Mexico)

    2003-07-01

    {alpha}-Fe{sub 2}O{sub 3} polycrystalline films with grains larger than 31 nm were grown by the spin-on sol-gel deposition method. The particular sol used was prepared starting from two distinct precursor reagents. Both precursors leaded to similar films. Order within the films was altered by adding tin to the samples. Transmittance measurements confirmed that the hematite phase is obtained by annealing the samples above 400 C and yielded an optical gap of about 2.2 eV, but additional transitions at 2.7 eV were also observed. From RBS measurements it was found that tin inclusion decreases iron content as expected, but also increases oxygen concentration within the films. This last observation was associated to the disorder rise when introducing tin atoms. (Author)

  3. Current induced annealing and electrical characterization of single layer graphene grown by chemical vapor deposition for future interconnects in VLSI circuits

    Science.gov (United States)

    Prasad, Neetu; Kumari, Anita; Bhatnagar, P. K.; Mathur, P. C.; Bhatia, C. S.

    2014-09-01

    Single layer graphene (SLG) grown by chemical vapor deposition (CVD) has been investigated for its prospective application as horizontal interconnects in very large scale integrated circuits. However, the major bottleneck for its successful application is its degraded electronic transport properties due to the resist residual trapped in the grain boundaries and on the surface of the polycrystalline CVD graphene during multi-step lithographic processes, leading to increase in its sheet resistance up to 5 MΩ/sq. To overcome this problem, current induced annealing has been employed, which helps to bring down the sheet resistance to 10 kΩ/sq (of the order of its initial value). Moreover, the maximum current density of ˜1.2 × 107 A/cm2 has been obtained for SLG (1 × 2.5 μm2) on SiO2/Si substrate, which is about an order higher than that of conventionally used copper interconnects.

  4. Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Alevli, Mustafa, E-mail: mustafaalevli@marmara.edu.tr; Gungor, Neşe [Department of Physics, Faculty of Arts and Sciences, Marmara University, Goztepe, 34722 Istanbul (Turkey); Haider, Ali; Kizir, Seda; Leghari, Shahid A.; Biyikli, Necmi, E-mail: biyikli@unam.bilkent.edu.tr [Institute of Materials Science and Nanotechnology, Bilkent University, Bilkent, 06800 Ankara, Turkey and National Nanotechnology Research Center (UNAM), Bilkent University, Bilkent, 06800 Ankara (Turkey)

    2016-01-15

    Gallium nitride films were grown by hollow cathode plasma-assisted atomic layer deposition using triethylgallium and N{sub 2}/H{sub 2} plasma. An optimized recipe for GaN film was developed, and the effect of substrate temperature was studied in both self-limiting growth window and thermal decomposition-limited growth region. With increased substrate temperature, film crystallinity improved, and the optical band edge decreased from 3.60 to 3.52 eV. The refractive index and reflectivity in Reststrahlen band increased with the substrate temperature. Compressive strain is observed for both samples, and the surface roughness is observed to increase with the substrate temperature. Despite these temperature dependent material properties, the chemical composition, E{sub 1}(TO), phonon position, and crystalline phases present in the GaN film were relatively independent from growth temperature.

  5. Correlative analysis of the in situ changes of carrier decay and proton induced photoluminescence characteristics in chemical vapor deposition grown GaN

    Energy Technology Data Exchange (ETDEWEB)

    Gaubas, E., E-mail: eugenijus.gaubas@ff.vu.lt; Ceponis, T.; Jasiunas, A.; Meskauskaite, D.; Pavlov, J.; Tekorius, A.; Vaitkus, J. [Vilnius University, Institute of Applied Research, Vilnius LT-10222 (Lithuania); Kovalevskij, V.; Remeikis, V. [Centre for Physical Sciences and Technology, Vilnius LT-02300 (Lithuania)

    2014-02-10

    In order to evaluate carrier densities created by 1.6 MeV protons and to trace radiation damage of the 2.5 μm thick GaN epi-layers grown by metalorganic chemical vapor deposition technique, a correlation between the photoconductivity transients and the steady-state photoluminescence spectra have been examined. Comparison of luminescence spectra induced by proton beam and by laser pulse enabled us to evaluate the efficiency of a single proton generation being of 1 × 10{sup 7} cm{sup −3} per 1.6 MeV proton and 40 carrier pairs per micrometer of layer depth. This result indicates that GaN layers can be an efficient material for detection of particle flows. It has been demonstrated that GaN material can also be a rather efficient scintillating material within several wavelength ranges.

  6. Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition

    Institute of Scientific and Technical Information of China (English)

    Xu Shengrui; Zhou Xiaowei; Hao Yue; Mao Wei; Zhang Jincheng; Zhang Zhongfen; Bai Lin; Zhang Jinfeng; Li Zhiming

    2009-01-01

    Nonpolar (11(2)0) a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane (1(1)02) sapphire substrate. The structural and electrical properties of the a-plane GaN films are investigated by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and van der Pauw Hall measurement.It is found that the Hall voltage shows more anisotropy than that of the c-plane samples; furthermore, the mobility changes with the degree of the van der Pauw square diagonal to the c direction, which shows significant electrical anisotropy. Further research indicates that electron mobility is strongly influenced by edge dislocations.

  7. Thickness-modulated tungsten–carbon superconducting nanostructures grown by focused ion beam induced deposition for vortex pinning up to high magnetic fields

    Directory of Open Access Journals (Sweden)

    Ismael García Serrano

    2016-11-01

    Full Text Available We report efficient vortex pinning in thickness-modulated tungsten–carbon-based (W–C nanostructures grown by focused ion beam induced deposition (FIBID. By using FIBID, W–C superconducting films have been created with thickness modulation properties exhibiting periodicity from 60 to 140 nm, leading to a strong pinning potential for the vortex lattice. This produces local minima in the resistivity up to high magnetic fields (2.2 T in a broad temperature range due to commensurability effects between the pinning potential and the vortex lattice. The results show that the combination of single-step FIBID fabrication of superconducting nanostructures with built-in artificial pinning landscapes and the small intrinsic random pinning potential of this material produces strong periodic pinning potentials, maximizing the opportunities for the investigation of fundamental aspects in vortex science under changing external stimuli (e.g., temperature, magnetic field, electrical current.

  8. Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Ko, T. S.; Lu, T. C.; Wang, T. C.; Chen, J. R.; Gao, R. C.; Lo, M. H.; Kuo, H. C.; Wang, S. C.; Shen, J. L.

    2008-11-01

    a-plane InGaN/GaN multiple quantum wells of different widths ranging from 3 to 12 nm grown on r-plane sapphire by metal-organic chemical vapor deposition were investigated. The peak emission intensity of the photoluminescence (PL) reveals a decreasing trend as the well width increases from 3 to 12 nm. Low temperature (9 K) time-resolved PL (TRPL) study shows that the sample with 3-nm-thick wells has the best optical property with a fastest exciton decay time of 0.57 ns. The results of cathodoluminescence and micro-PL scanning images for samples of different well widths further verify that the more uniform and stronger luminescence intensity distribution are observed for the samples of thinner quantum wells. In addition, more effective capturing of excitons due to larger localization energy Eloc and shorter radiative lifetime of localized excitons are observed in thinner well width samples in the temperature dependent TRPL.

  9. LaAu2 and CeAu2 surface intermetallic compounds grown by high-temperature deposition on Au(111)

    Science.gov (United States)

    Ormaza, M.; Fernández, L.; Lafuente, S.; Corso, M.; Schiller, F.; Xu, B.; Diakhate, M.; Verstraete, M. J.; Ortega, J. E.

    2013-09-01

    We report on the crystal structure and electronic bands of LaAu2 and CeAu2 surface intermetallic compounds grown by high-temperature deposition on Au(111). By scanning-tunneling microscopy we study the formation of different alloy phases as a function of growth temperature and lanthanide coverage. We determine the specific growth conditions to achieve monolayers and bilayers of LaAu2 and CeAu2 with high crystalline quality. Due to lattice mismatch with the underlying Au substrate, both LaAu2 and CeAu2 exhibit long-range moiré patterns, which can serve as templates for further nanostructure growth. By angle-resolved photoemission we map the two-dimensional band structure of these surface alloys, discussing the nature of the different spectral features in the light of first-principles calculations.

  10. Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

    Institute of Scientific and Technical Information of China (English)

    CHEN Peng; ZHENG You-Dou; JIANG Shu-Sheng; FENG Duan; Z. C. Huang; SHEN Bo; ZHU Jian-Min; CHEN Zhi-Zhong; ZHOU Yu-Gang; XIE Shi-Yong; ZHANG Rong; HAN Ping; GU Shu-Lin

    2000-01-01

    Microstructures of GaN buffer layers grown on Si (111) substrates using rapid thermal process low-pressure metalorganic chemical vapor deposition are investigated by an atomic force microscope (AFM) and a high resolution transmission electron microscope (HRTEM). AFM images show that the islands appear in the GaN buffer layer after annealing at high temperature. Cross-sectional HRTEM micrographs of the buffer region of these samples indicate that there are bunched steps on the surface of the Si substrate and a lot of domains in GaN misorienting each other with small angles. The boundaries of those dowains locate near the bunched steps,and the regions of the film on a terrace between steps have the same crystal orientation. An amorphous-like layer, about 3 nm thick, can also be observed between the GaN buffer layer and the Si substrate.

  11. Carbon nanotubes grown by catalytic CO 2 laser-induced chemical vapor deposition on core-shell Fe/C composite nanoparticles

    Science.gov (United States)

    Morjan, I.; Soare, I.; Alexandrescu, R.; Gavrila-Florescu, L.; Morjan, R.-E.; Prodan, G.; Fleaca, C.; Sandu, I.; Voicu, I.; Dumitrache, F.; Popovici, E.

    2008-01-01

    The synthesis of carbon nanotubes (CNTs) by catalytic laser-induced chemical vapor deposition (C-LCVD) was investigated. C-LCVD uses both ex situ synthesized catalyst nanoparticles and the controlled decomposition of gas-phase hydrocarbon mixtures. As catalysts, Fe/C composites of the core-shell type were used. A continuous-wave CO 2 laser was employed to irradiate the ethylene/acetylene hydrocarbon precursors and to simultaneously heat a silicon substrate on which the carbon nanotubes were grown. The effects on carbon nanotube growth of both the iron-based nanocomposite particles and of the ethylene concentration were studied. The analysis suggests the feasibility of the C-LCVD process, in which the core-shell Fe/C catalysts comply with the prerequisite conditions of the CNT growth namely dispersion and supersaturation.

  12. Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP

    Energy Technology Data Exchange (ETDEWEB)

    Mohandas, Reshma A.; Freeman, Joshua R., E-mail: j.r.freeman@leeds.ac.uk; Rosamond, Mark C.; Chowdhury, Siddhant; Cunningham, John E.; Davies, A. Giles; Linfield, Edmund H.; Dean, Paul [School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom); Hatem, Osama [School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom); Department of Engineering Physics, Faculty of Engineering, Tanta University, PO Box 31521, Tanta (Egypt); Ponnampalam, Lalitha; Fice, Martyn; Seeds, Alwyn J. [Department of Electronic and Electrical Engineering, University College London, London WC1E 6BT (United Kingdom); Cannard, Paul J.; Robertson, Michael J.; Moodie, David G. [CIP Technologies, Adastral Park, Martlesham Heath, Ipswich, Suffolk IP5 3RE (United Kingdom)

    2016-04-21

    We demonstrate the generation of continuous wave terahertz (THz) frequency radiation from photomixers fabricated on both Fe-doped InGaAs and Fe-doped InGaAsP, grown by metal-organic chemical vapor deposition. The photomixers were excited using a pair of distributed Bragg reflector lasers with emission around 1550 nm, and THz radiation was emitted over a bandwidth of greater than 2.4 THz. Two InGaAs and four InGaAsP wafers with different Fe doping concentrations were investigated, with the InGaAs material found to outperform the InGaAsP in terms of emitted THz power. The dependencies of the emitted power on the photomixer applied bias, incident laser power, and material doping level were also studied.

  13. Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Watanabe, Arata, E-mail: a.watanabe.106@nitech.jp; Freedsman, Joseph J.; Urayama, Yuya; Christy, Dennis [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Egawa, Takashi, E-mail: egawa.takashi@nitech.ac.jp [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)

    2015-12-21

    The thermal stabilities of metal-organic chemical vapor deposition-grown lattice-matched InAlN/GaN/Si heterostructures have been reported by using slower and faster growth rates for the InAlN barrier layer in particular. The temperature-dependent surface and two-dimensional electron gas (2-DEG) properties of these heterostructures were investigated by means of atomic force microscopy, photoluminescence excitation spectroscopy, and electrical characterization. Even at the annealing temperature of 850 °C, the InAlN layer grown with a slower growth rate exhibited a smooth surface morphology that resulted in excellent 2-DEG properties for the InAlN/GaN heterostructure. As a result, maximum values for the drain current density (I{sub DS,max}) and transconductance (g{sub m,max}) of 1.5 A/mm and 346 mS/mm, respectively, were achieved for the high-electron-mobility transistor (HEMT) fabricated on this heterostructure. The InAlN layer grown with a faster growth rate, however, exhibited degradation of the surface morphology at an annealing temperature of 850 °C, which caused compositional in-homogeneities and impacted the 2-DEG properties of the InAlN/GaN heterostructure. Additionally, an HEMT fabricated on this heterostructure yielded lower I{sub DS,max} and g{sub m,max} values of 1 A/mm and 210 mS/mm, respectively.

  14. Structural and optical properties of InAs/InAsSb superlattices grown by metal organic chemical vapor deposition for mid-wavelength infrared photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Ning, Zhen-Dong, E-mail: ningzd@semi.ac.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liu, Shu-Man, E-mail: liusm@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Luo, Shuai; Ren, Fei; Wang, Feng-Jiao; Yang, Tao; Liu, Feng-Qi [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Wang, Zhan-Guo [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhao, Lian-Cheng [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

    2016-04-15

    Graphical abstract: - Highlights: • Structural and optical properties of InAs/InAsSb superlattices were investigated. • Temperature dependent photoluminescence emission was investigated in detail. • The Varshni and Bose–Einstein parameters were obtained. - Abstract: InAs/InAsSb superlattices were grown on (0 0 1) GaSb substrates by metal organic chemical vapor deposition for potential applications as mid-infrared optoelectronic devices. X-ray diffraction, transmission electron microscopy, photoluminescence emission and spectral photoconductivity were used to characterize the grown structures. Generally, photoluminescence emission measurements of InAs/InAsSb superlattices were performed over the temperature range from 11 K to 300 K. The Varshni and Bose–Einstein parameters were determined. Low-temperature photoluminescence measurements showed peaks at 3–5 μm, while photoconductance results showed strong spectral response up to room temperature, when the photoresponse onset was extended to 5.5 μm. The photoluminescence emission band covers the CO{sub 2} absorption peak making it suitable for application in CO{sub 2} detection.

  15. Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO{sub 2}/TiN devices

    Energy Technology Data Exchange (ETDEWEB)

    Matveyev, Yu.; Zenkevich, A. [Moscow Institute of Physics and Technology, 141700 Moscow Region (Russian Federation); NRNU “Moscow Engineering Physics Institute”, 115409 Moscow (Russian Federation); Egorov, K.; Markeev, A. [Moscow Institute of Physics and Technology, 141700 Moscow Region (Russian Federation)

    2015-01-28

    Recently proposed novel neural network hardware designs imply the use of memristors as electronic synapses in 3D cross-bar architecture. Atomic layer deposition (ALD) is the most feasible technique to fabricate such arrays. In this work, we present the results of the detailed investigation of the gradual resistive switching (memristive) effect in nanometer thick fully ALD grown TiN/HfO{sub 2}/TiN stacks. The modelling of the I-V curves confirms interface limited trap-assisted-tunneling mechanism along the oxygen vacancies in HfO{sub 2} in all conduction states. The resistivity of the stack is found to critically depend upon the distance from the interface to the first trap in HfO{sub 2}. The memristive properties of ALD grown TiN/HfO{sub 2}/TiN devices are correlated with the demonstrated neuromorphic functionalities, such as long-term potentiation/depression and spike-timing dependent plasticity, thus indicating their potential as electronic synapses in neuromorphic hardware.

  16. IR emission and electrical conductivity of Nd/Nb-codoped TiOx (1.5 < x < 2) thin films grown by pulsed-laser deposition

    Science.gov (United States)

    Tchiffo-Tameko, C.; Cachoncinlle, C.; Perriere, J.; Nistor, M.; Petit, A.; Aubry, O.; Pérez Casero, R.; Millon, E.

    2016-12-01

    The effect of the co-doping with Nd and Nb on electrical and optical properties of TiOx films is reported. The role of oxygen vacancies on the physical properties is also evidenced. The films are grown by pulsed-laser deposition onto (001) sapphire and (100) silicon substrates. The substrate temperature was fixed at 700 °C. To obtain either stoichiometric (TiO2) or highly oxygen deficient (TiOx with x TiO2 were used as bulk ceramic target. Composition, structural and morphological properties of films determined by Rutherford backscattering spectroscopy, X-ray diffraction and scanning electron microscopy, are correlated to their optical (UV-vis transmission and photoluminescence) and electrical properties (resistivity at room temperature). The most intense Nd3+ emission in the IR domain is obtained for stoichiometric films. Codoping Nd-TiOx films by Nb5+ ions is found to decrease the photoluminescence efficiency. The oxygen pressure during the growth allows to tune the optical and electrical properties: insulating and highly transparent (80% in the visible range) Nd/Nb codoped TiO2 films are obtained at high oxygen pressure, while conductive and absorbent films are grown under low oxygen pressure (10-6 mbar).

  17. Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng, E-mail: jchzhang@xidian.edu.cn; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2015-07-27

    Ultrathin-barrier AlN/GaN heterostructures were grown on sapphire substrates by pulsed metal organic chemical vapor deposition (PMOCVD) using indium as a surfactant at a dramatically reduced growth temperature of 830 °C. Upon optimization of growth parameters, an electron mobility of 1398 cm{sup 2}/V s together with a two-dimensional-electron-gas density of 1.3 × 10{sup 13 }cm{sup −2} was obtained for a 4 nm thick AlN barrier. The grown structures featured well-ordered parallel atomic steps with a root-mean-square roughness of 0.15 nm in a 5 × 5 μm{sup 2} area revealed by atomic-force-microscopic image. Finally, the potential of such structures for device application was demonstrated by fabricating and testing under dc operation AlN/GaN high-electron-mobility transistors. These results indicate that this low temperature PMOCVD growth technique is promising for the fabrication of GaN-based electronic devices.

  18. Ferromagnetism of MnxSi1-x(x ∼ 0.5 films grown in the shadow geometry by pulsed laser deposition method

    Directory of Open Access Journals (Sweden)

    S. N. Nikolaev

    2016-01-01

    Full Text Available The results of a comprehensive study of magnetic, magneto-transport and structural properties of nonstoichiometric MnxSi1-x (x ≈ 0.51-0.52 films grown by the Pulsed Laser Deposition (PLD technique onto Al2O3(0001 single crystal substrates at T = 340°C are present. A highlight of used PLD method is the non-conventional (“shadow” geometry with Kr as a scattering gas during the sample growth. It is found that the films exhibit high-temperature (HT ferromagnetism (FM with the Curie temperature TC ∼ 370 K accompanied by positive sign anomalous Hall effect (AHE; they also reveal the polycrystalline structure with unusual distribution of grains in size and shape. It is established that HT FM order is originated from the bottom interfacial self-organizing nanocrystalline layer. The upper layer adopted columnar structure with the lateral grain size ≥50 nm, possesses low temperature (LT type of FM order with Tc ≈ 46 K and contributes essentially to the magnetization at T ≤ 50 K. Under these conditions, AHE changes its sign from positive to negative at T ≤ 30K. We attribute observed properties to the synergy of distribution of MnxSi1-x crystallites in size and shape as well as peculiarities of defect-induced FM order in shadow geometry grown polycrystalline MnxSi1-x (x ∼ 0.5 films.

  19. Influence of the shape and surface oxidation in the magnetization reversal of thin iron nanowires grown by focused electron beam induced deposition

    Directory of Open Access Journals (Sweden)

    Luis A. Rodríguez

    2015-06-01

    Full Text Available Iron nanostructures grown by focused electron beam induced deposition (FEBID are promising for applications in magnetic sensing, storage and logic. Such applications require a precise design and determination of the coercive field (HC, which depends on the shape of the nanostructure. In the present work, we have used the Fe2(CO9 precursor to grow iron nanowires by FEBID in the thickness range from 10 to 45 nm and width range from 50 to 500 nm. These nanowires exhibit an Fe content between 80 and 85%, thus giving a high ferromagnetic signal. Magneto-optical Kerr characterization indicates that HC decreases for increasing thickness and width, providing a route to control the magnetization reversal field through the modification of the nanowire dimensions. Transmission electron microscopy experiments indicate that these wires have a bell-type shape with a surface oxide layer of about 5 nm. Such features are decisive in the actual value of HC as micromagnetic simulations demonstrate. These results will help to make appropriate designs of magnetic nanowires grown by FEBID.

  20. Cobalt(I) Olefin Complexes: Precursors for Metal-Organic Chemical Vapor Deposition of High Purity Cobalt Metal Thin Films.

    Science.gov (United States)

    Hamilton, Jeff A; Pugh, Thomas; Johnson, Andrew L; Kingsley, Andrew J; Richards, Stephen P

    2016-07-18

    We report the synthesis and characterization of a family of organometallic cobalt(I) metal precursors based around cyclopentadienyl and diene ligands. The molecular structures of the complexes cyclopentadienyl-cobalt(I) diolefin complexes are described, as determined by single-crystal X-ray diffraction analysis. Thermogravimetric analysis and thermal stability studies of the complexes highlighted the isoprene, dimethyl butadiene, and cyclohexadiene derivatives [(C5H5)Co(η(4)-CH2CHC(Me)CH2)] (1), [(C5H5)Co(η(4)-CH2C(Me)C(Me)CH2)] (2), and [(C5H5)Co(η(4)-C6H8)] (4) as possible cobalt metal organic chemical vapor deposition (MOCVD) precursors. Atmospheric pressure MOCVD was employed using precursor 1, to synthesize thin films of metallic cobalt on silicon substrates under an atmosphere (760 torr) of hydrogen (H2). Analysis of the thin films deposited at substrate temperatures of 325, 350, 375, and 400 °C, respectively, by scanning electron microscopy and atomic force microscopy reveal temperature-dependent growth features. Films grown at these temperatures are continuous, pinhole-free, and can be seen to be composed of hexagonal particles clearly visible in the electron micrograph. Powder X-ray diffraction and X-ray photoelectron spectroscopy all show the films to be highly crystalline, high-purity metallic cobalt. Raman spectroscopy was unable to detect the presence of cobalt silicides at the substrate/thin film interface.

  1. Quantum size effects in TiO2 thin films grown by atomic layer deposition

    OpenAIRE

    Massimo Tallarida; Chittaranjan Das; Dieter Schmeisser

    2014-01-01

    We study the atomic layer deposition of TiO2 by means of X-ray absorption spectroscopy. The Ti precursor, titanium isopropoxide, was used in combination with H2O on Si/SiO2 substrates that were heated at 200 °C. The low growth rate (0.15 Å/cycle) and the in situ characterization permitted to follow changes in the electronic structure of TiO2 in the sub-nanometer range, which are influenced by quantum size effects. The modified electronic properties may play an important role in charge carrier...

  2. Effects of substrates on Raman spectroscopy in chemical vapor deposition grown graphene transferred with poly (methyl methacrylate)

    Science.gov (United States)

    Gui, Yangyang; Sun, Hengchao; Yan, Hui; Wang, Hao; Zhang, Yongzhe; Song, Xue Mei; Jia, Rui

    2017-09-01

    Graphene on copper foil produced through chemical vapor deposition has been transferred to different substrates and the Raman signatures from graphene on semi-insulating GaAs, n-GaAs, SiO2 (300 nm)/Si, boron-doped Si, phosphorus-doped Si have been studied. It is found that all the material varieties, morphology and lattice of substrates can influence the Raman scattering spectra from graphene. The obtained results are important for nanometrology of graphene and graphene based devices.

  3. Towards low-cost high-efficiency GaAs photovoltaics and photoelectrodes grown via vapor transport from a solid source

    Energy Technology Data Exchange (ETDEWEB)

    Boucher, Jason [University of Oregon; Ritenour, Andrew [University of Oregon; Boettcher, Shannon W. [University of Oregon

    2013-04-29

    Towards low-cost high-efficiency GaAs photovoltaics and photoelectrodes grown via vapor transport from a solid source GaAs is an attractive material for thin-film photovoltaic applications, but is not widely used for terrestrial power generation due to the high cost of metal-organic chemical vapor deposition (MOCVD) techniques typically used for growth. Close space vapor transport is an alternative that allows for rapid growth rates of III-V materials, and does not rely on the toxic and pyrophoric precursors used in MOCVD. We characterize CSVT films of GaAs using photoelectrochemical current-voltage and quantum efficiency measurements. Hole diffusion lengths which exceed 1.5 um are extracted from internal quantum efficiency measurements using the Gartner model. Device physics simulations suggest that solar cells based on these films could reach efficiencies exceeding 24 %. To reach this goal, a more complete understanding of the electrical properties and characterization of defects will be necessary, including measurements on complete solid-state devices. Doping of films is achieved by using source material containing the desired impurity (e.g., Te or Zn). We discuss strategies for growing III-V materials on inexpensive substrates that are not lattice-matched to GaAs.

  4. Role of oxygen and nitrogen in n-type microcrystalline silicon carbide grown by hot wire chemical vapor deposition

    Science.gov (United States)

    Pomaska, Manuel; Mock, Jan; Köhler, Florian; Zastrow, Uwe; Perani, Martina; Astakhov, Oleksandr; Cavalcoli, Daniela; Carius, Reinhard; Finger, Friedhelm; Ding, Kaining

    2016-12-01

    N-type microcrystalline silicon carbide (μc-SiC:H(n)) deposited by hot wire chemical vapor deposition provides advantageous opto-electronic properties for window layer material in silicon-based thin-film solar cells and silicon heterojunction solar cells. So far, it is known that the dark conductivity (σd) increases with the increase in the crystallinity of μc-SiC:H(n)films. However, due to the fact that no active doping source is used, the mechanism of electrical transport in these films is still under debate. It is suggested that unintentional doping by atmospheric oxygen (O) or nitrogen (N) contamination plays an important role in the electrical transport. To investigate the impact of O and N, we incorporated O and N in μc-SiC:H(n) films and compared the influence on the microstructural, electronic, and optical properties. We discovered that, in addition to increasing the crystallinity, it is also possible to increase the σd by several orders of magnitude by increasing the O-concentration or the N-concentration in the films. Combining a high concentration of O and N, along with a high crystallinity in the film, we optimized the σd to a maximum of 5 S/cm.

  5. Properties of ZnO thin films grown on Si substrates in vacuum and oxygen ambient by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Jie [State Key Laboratory for Materials Modification by Laser, Ion, Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116024 (China) and Department of Physics, Kunming University of Science and Technology, Kunming 650093 (China)]. E-mail: jiezhao_sub@163.com; Hu Lizhong [State Key Laboratory for Materials Modification by Laser, Ion, Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116024 (China); Liu Weifeng [State Key Laboratory for Materials Modification by Laser, Ion, Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116024 (China); Wang Zhaoyang [State Key Laboratory for Materials Modification by Laser, Ion, Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116024 (China)

    2007-05-15

    Epitaxial ZnO thin films have been synthesized directly on Si(1 1 1) substrates by pulsed laser deposition (PLD) in vacuum. The reflection high-energy electron diffraction (RHEED) indicates that streaky patterns can be clearly observed from the ZnO epilayers prepared at 600 and 650 deg. C, revealing a two-dimensional (2D) growth mode. While the ZnO thin film deposited in oxygen ambient shows ring RHEED pattern. There is a compressive in-plane stress existing in the ZnO epitaxial film, but a tensile one in the polycrystalline film. Compared with the ZnO epilayer, the ZnO polycrystalline film shows more intense ultraviolet emission (UVE) with a small full width at half maximum (FWHM) of 89 meV. It is suggested that the atomically flat epilayers may be powerfully used as transitive stratums to grow high-quality ZnO films suitable for the fabrication of optoelectronic devices.

  6. Cu(In,Ga)Se{sub 2} solar cells with double layered buffers grown by chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, Z.Q.; Shi, J.H.; Zhang, D.W.; Liu, Q.Q.; Sun, Z.; Chen, Y.W. [Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062 (China); Yang, Z. [Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240 (China); Huang, S.M., E-mail: engp5591@yahoo.com [Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, East China Normal University, North Zhongshan Rd. 3663, Shanghai 200062 (China)

    2011-10-31

    In based mixture In{sub x}(OH,S){sub y} buffer layers deposited by chemical bath deposition technique are a viable alternative to the traditional cadmium sulfide buffer layer in thin film solar cells. We report on the results of manipulating the absorber/buffer interface between the chalcopyrite Cu(In,Ga)Se{sub 2} (CIGS) absorber and CdS or ZnS buffer by addition of a thin In based mixture layer. It is shown that the presence of thin In{sub x}(OH,S){sub y} at the CIGS absorber/CdS or ZnS buffer interfaces greatly improve the solar cell performances. The performances of CIGS cells using dual buffer layers composed of In{sub x}(OH,S){sub y}/CdS or In{sub x}(OH,S){sub y}/ZnS increased by 22.4% and 51.6%, as compared to the single and standard CdS or ZnS buffered cells, respectively.

  7. ~3-nm ZnO Nanoislands Deposition and Application in Charge Trapping Memory Grown by Single ALD Step

    Science.gov (United States)

    El-Atab, Nazek; Chowdhury, Farsad; Ulusoy, Turkan Gamze; Ghobadi, Amir; Nazirzadeh, Amin; Okyay, Ali K.; Nayfeh, Ammar

    2016-12-01

    Low-dimensional semiconductor nanostructures are of great interest in high performance electronic and photonic devices. ZnO is considered to be a multifunctional material due to its unique properties with potential in various applications. In this work, 3-nm ZnO nanoislands are deposited by Atomic Layer Deposition (ALD) and the electronic properties are characterized by UV-Vis-NIR Spectrophotometer and X-ray Photoelectron Spectroscopy. The results show that the nanostructures show quantum confinement effects in 1D. Moreover, Metal-Oxide-Semiconductor Capacitor (MOSCAP) charge trapping memory devices with ZnO nanoislands charge storage layer are fabricated by a single ALD step and their performances are analyzed. The devices showed a large memory window at low operating voltages with excellent retention and endurance characteristics due to the additional oxygen vacancies in the nanoislands and the deep barrier for the trapped holes due to the reduction in ZnO electron affinity. The results show that the ZnO nanoislands are promising in future low power memory applications.

  8. DFT study on adduct reaction paths of GaN MOCVD growth

    Institute of Scientific and Technical Information of China (English)

    SHI; JunCao; ZUO; Ran; MENG; SuCi

    2013-01-01

    The adduct reaction paths for GaN growth by metal organic chemical vapor deposition (MOCVD) were studied by quantum chemical calculations employing density functional theory (DFT). Five possible adduct reaction paths with or without the ex-cess NH3were proposed and the corresponding potential energy surfaces were calculated. From the calculation results, it is concluded that after the formation of DMGNH2from TMG:NH3, the further decomposition paths have very slim probability because of the high energy barriers; whereas the oligomerization pathway to form oligomers [DMGNH2]x(x=2, 3) is probable,because of zero energy barrier. Since the oligomers tend to further polymerize, the nanoparticles are easily formed through this path. When NH3is in excess, TMG:NH3 tends to combine with the second NH3to form two new complexes: the coordination-bonded compound H3N:TMG:NH3and the hydrogen-bonded compound TMG:NH3 NH3. The formation of hydrogen-bonded compound TMG:NH3 NH3 will be more probable because of the lower energy than H3N:TMG:NH3. By comparing the potential energy surfaces in five adduct reaction paths, we postulate that, under the growth conditions of GaN MOCVD, the formation of hydrogen-bonded compound TMG:NH3 NH3 followed by the reversible decomposition may be the main reaction path for GaN thin film growth; while the adduct oligomerization path to generate oligomers [DMGNH2]2 and [DMGNH2]3might be the main reaction path for nanoparticles formation.

  9. Structural properties of strained YBa2Cu3O6+x superconducting films grown by pulsed laser deposition

    Science.gov (United States)

    Ariosa, Daniel; Abrecht, M.; Pavuna, Davor; Onellion, Marshall

    2000-09-01

    In YBa2Cu3O6+x compound the tetragonal to orthorhombic transition occurs around x equals 0.3, followed by a continuum variation of lattice parameters. Hence both, the structural and superconducting properties, depend upon the oxygen content in CuO chains. Conversely, the epitaxial stress, exerted by the substrate on YBCO films, modified the lattice parameters influencing the oxygen stability in the chains. The understanding of this mechanism is essential when growing epitaxial films for in- situ photoemission studies as well as for tunneling experiments, since the oxygen stability up to the top surface unit-cell is a central issue. We have studied this effect on c-axis oriented YBCO films grown by laser ablation on (001) STO single crystals. Accurate x-ray diffraction analysis of thick films (t GRT 500 angstrom) indicates the presence of two distinct layers, one strained and the other relaxed. Detailed analysis shows that the relaxed layer is as well oxidized as bulk samples, while the strained one is oxygen deficient. Furthermore, despite an oxygen content of about x equals 0.65, the strained layer is in the tetragonal phase (in bulk, the tetragonal phase exists for x < 0.3). We discuss these results in terms of competition between the chemical pressure induced by oxygen inclusion in the chains, and the uniaxial stress within the film.

  10. Characterization of the InGaN/GaN Multi-Quantum-Wells Light-Emitting Diode Grown on Patterned Sapphire Substrate with Wide Electroluminescence Spectrum

    Science.gov (United States)

    Reum Lee, Ah; Jeon, Hunsoo; Lee, Gang-Seok; Ok, Jin-Eun; Jo, Dong-Wan; Kim, Kyoung Hwa; Yi, Sam Nyung; Yang, Min; Ahn, Hyung Soo; Cho, Chae-Ryong; Kim, Suok-Whan; Lee, Jae-Hak; Ha, Hong-Ju

    2011-01-01

    We report the characterization of the InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) grown on a patterned sapphire substrate by metal organic chemical vapor deposition (MOCVD) using the selective area growth (SAG) method. The SAG patterns were designed to be circular and their diameters were 700 and 200 µm. After the growth, the InGaN/GaN MQW LED of 200 µm diameter had various crystal facets and a shape similar to volcanic craters, which were not observed in the 700-µm-diameter sample. We obtained an active layer with compositional nonuniformity and superior optical properties. We found wide electroluminescence (EL) spectral peaks near 470, 570, and 600 nm. The distribution of the EL spectrum of the sample was similar to that of a conventional phosphor-converted white LED.

  11. Study of GaN MOS-HEMT using ultrathin Al2O3 dielectric grown by atomic layer deposition

    Institute of Scientific and Technical Information of China (English)

    2009-01-01

    We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic-layer deposited (ALD) Al2O3 as the gate dielectric. Through further decreasing the thickness of the gate oxide to 3.5 nm and optimizing the device fabrication process,a device with maximum transconductance of 150 mS/mm was produced. The drain current of this 0.8 μm gate-length MOS-HEMT could reach 800 mA/mm at +3.0 V gate bias. Compared to a conventional AlGaN/GaN HEMT of similar design,better interface property,lower leakage current,and smaller capacitance-voltage (C-V) hysteresis were obtained,and the superiority of this MOS-HEMT device structure with ALD Al2O3 gate dielectric was exhibited.

  12. Study of GaN MOS-HEMT using ultrathin Al2O3 dielectric grown by atomic layer deposition

    Institute of Scientific and Technical Information of China (English)

    YUE YuanZheng; HAO Yue; FENG Qian; ZHANG JinCheng; MA XiaoHua; NI JinYu

    2009-01-01

    We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic-layer deposited (ALD) Al2O3 as the gate dielectric. Through further decreasing the thickness of the gate oxide to 3.5 nm and optimizing the device fabrication process, a device with maximum transconductance of 150 mS/mm was produced. The drain current of this 0.8 μm gate-length MOS-HEMT could reach 800 mA/mm at +3.0 V gate bias. Compared to a conventional AIGaN/GaN HEMT of similar design, better interface property, lower leakage current, and smaller capacitance-voltage (C-V) hysteresis were obtained, and the superiority of this MOS-HEMT device structure with ALD Al2O3 gate dielectric was exhibited.

  13. Bias-assisted atomic force microscope nanolithography on NbS2 thin films grown by chemical vapor deposition

    Science.gov (United States)

    Bark, Hunyoung; Kwon, Sanghyuk; Lee, Changgu

    2016-12-01

    Niobium disulfide, one of the metallic transition metal dichalcogenides, has a high potential as an electrode material for electronic devices made of 2D materials. Here, we investigated the bias-assisted atomic force microscope nanolithography of NbS2 thin films synthesized by chemical vapor deposition. We analyzed the lithographed pattern using Raman spectroscopy, transmission electron microscopy and friction force microscopy. These analyses showed that lines having various widths and thicknesses could be generated using the lithography technique by simply varying the scan speed and applied voltage. These analyses also revealed that the NbS2 film transformed from a layered crystalline structure into an amorphous structure upon being lithographed. By generating four line segments forming a square and measuring I/V curves inside and outside of the square, the electrical properties of the lithographed material were characterized. These analyses indicate that NbS2 became hydrogenated and an insulator upon being lithographed.

  14. Structural and magnetic properties of epitaxial delafossite CuFeO{sub 2} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, Toyanath; Senty, Tess R.; Trappen, Robbyn; Zhou, Jinling; Borisov, Pavel; Holcomb, Mikel B.; Bristow, Alan D.; Lederman, David [Department of Physics and Astronomy, West Virginia University, Morgantown, West Virginia 26506-6315 (United States); Chen, Song; Song, Xueyan [Department of Mechanical and Aerospace Engineering, West Virginia University, Morgantown, West Virginia 26506-6070 (United States); Ferrari, Piero; Cabrera, Alejandro L. [Pontificia Universidad Catolica, Instituto de Física, Santiago (Chile)

    2015-01-07

    Growth of pure phase delafossite CuFeO{sub 2} thin films on Al{sub 2}O{sub 3} (00.1) substrates by pulsed laser deposition was systematically investigated as a function of growth temperature and oxygen pressure. X-ray diffraction, transmission electron microscopy, Raman scattering, and x-ray absorption spectroscopy confirmed the existence of the delafossite phase. Infrared reflectivity spectra determined a band edge at 1.15 eV, in agreement with the bulk delafossite data. Magnetization measurements on CuFeO{sub 2} films demonstrated a phase transition at T{sub C} ≈ 15 ± 1 K, which agrees with the first antiferromagnetic transition at 14 K in the bulk CuFeO{sub 2}. Low temperature magnetic phase is best described by commensurate, weak ferromagnetic spin ordering along the c-axis.

  15. Absence of morphotropic phase boundary effects in BiFeO3-PbTiO3 thin films grown via a chemical multilayer deposition method

    Science.gov (United States)

    Gupta, Shashaank; Bhattacharjee, Shuvrajyoti; Pandey, Dhananjai; Bansal, Vipul; Bhargava, Suresh K.; Peng, Ju Lin; Garg, Ashish

    2011-07-01

    We report an unusual behavior observed in (BiFeO3)1- x -(PbTiO3) x (BF- xPT) thin films prepared using a multilayer chemical solution deposition method. Films of different compositions were grown by depositing several bilayers of BF and PT precursors of varying BF and PT layer thicknesses followed by heat treatment in air. X-ray diffraction showed that samples of all compositions show mixing of two compounds resulting in a single-phase mixture, also confirmed by transmission electron microscopy. In contrast to bulk compositions, samples show a monoclinic (MA-type) structure suggesting disappearance of the morphotropic phase boundary (MPB) at x=0.30 as observed in the bulk. This is accompanied by the lack of any enhancement of the remanent polarization at the MPB, as shown by the ferroelectric measurements. Magnetic measurements showed an increase in the magnetization of the samples with increasing BF content. Significant magnetization in the samples indicates melting of spin spirals in the BF- xPT films, arising from a random distribution of iron atoms. Absence of Fe2+ ions was corroborated by X-ray photoelectron spectroscopy measurements. The results illustrate that thin film processing methodology significantly changes the structural evolution, in contrast to predictions from the equilibrium phase diagram, besides modifying the functional characteristics of the BP- xPT system dramatically.

  16. Optical and morphological properties of SiN{sub x}/Si amorphous multilayer structures grown by Plasma Enhanced Chemical Vapor Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Santana, G.; Melo, O. de; Monroy, B.M.; Fandino, J.; Ortiz, A.; Alonso, J.C. [Instituto de Investigaciones en Materiales, Universidad Nacional Autonoma de Mexico, Cd. Universitaria, A.P. 70-360, Coyoacan (Mexico); Aguilar-Hernandez, J.; Cruz, F.; Contreras-Puentes, G. [Escuela Superior de Fisica y Matematicas del Instituto Politecnico Nacional; Edificio 9, U.P.A.L.M. (Mexico)

    2005-08-01

    Very thin layers of Si were grown in between silicon nitride layers using Plasma Enhanced Chemical Vapor Deposition (PECVD) technique and SiH{sub 2}Cl{sub 2}/H{sub 2}/NH{sub 3} mixtures. Deposition conditions were selected to favor Si cluster formation. Room Temperature Photoluminescence (RT-PL) and optical transmission in different ranges were used to evaluate the optical and structural properties of the films. Scanning Electron Microscopy (SEM) of the cross section of cleaved samples allowed to observe a clear pattern of Si clusters embedded in the SiN matrix. The UV-VIS absorption spectra present two band edges. We assume that the higher band gap is due to the amorphous Si clusters. RT-PL spectra are characterized by two broad bands: one centered at 1.5 eV and the other at 2.1 eV. The broad luminescence centered at 2.1 eV could be associated with the higher band gap observed in absorption spectrum. After vacuum annealing of the samples at 400 and ordm;C, the band at 2.1 eV disappears. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition.

    Science.gov (United States)

    Wu, Jingjin; Zhao, Yinchao; Zhao, Ce Zhou; Yang, Li; Lu, Qifeng; Zhang, Qian; Smith, Jeremy; Zhao, Yongming

    2016-08-13

    The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV-vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350-550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

  18. Phosphor-free white-light emitters using in-situ GaN nanostructures grown by metal organic chemical vapor deposition

    Science.gov (United States)

    Min, Daehong; Park, Donghwy; Jang, Jongjin; Lee, Kyuseung; Nam, Okhyun

    2015-01-01

    Realization of phosphor-free white-light emitters is becoming an important milestone on the road to achieve high quality and reliability in high-power white-light-emitting diodes (LEDs). However, most of reported methods have not been applied to practical use because of their difficulties and complexity. In this study we demonstrated a novel and practical growth method for phosphor-free white-light emitters without any external processing, using only in-situ high-density GaN nanostructures that were formed by overgrowth on a silicon nitride (SiNx) interlayer deposited by metal organic chemical vapor deposition. The nano-sized facets produced variations in the InGaN thickness and the indium concentration when an InGaN/GaN double heterostructure was monolithically grown on them, leading to white-color light emission. It is important to note that the in-situ SiNx interlayer not only facilitated the GaN nano-facet structure, but also blocked the propagation of dislocations. PMID:26626890

  19. Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Jingjin Wu

    2016-08-01

    Full Text Available The 4 at. % zirconium-doped zinc oxide (ZnO:Zr films grown by atomic layer deposition (ALD were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV–vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350–550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

  20. Electrical conduction and dielectric relaxation properties of AlN thin films grown by hollow-cathode plasma-assisted atomic layer deposition

    Science.gov (United States)

    Altuntas, Halit; Bayrak, Turkan; Kizir, Seda; Haider, Ali; Biyikli, Necmi

    2016-07-01

    In this study, aluminum nitride (AlN) thin films were deposited at 200 °C, on p-type silicon substrates utilizing a capacitively coupled hollow-cathode plasma source integrated atomic layer deposition (ALD) reactor. The structural properties of AlN were characterized by grazing incidence x-ray diffraction, by which we confirmed the hexagonal wurtzite single-phase crystalline structure. The films exhibited an optical band edge around ˜5.7 eV. The refractive index and extinction coefficient of the AlN films were measured via a spectroscopic ellipsometer. In addition, to investigate the electrical conduction mechanisms and dielectric properties, Al/AlN/p-Si metal-insulator-semiconductor capacitor structures were fabricated, and current density-voltage and frequency dependent (7 kHz-5 MHz) dielectric constant measurements (within the strong accumulation region) were performed. A peak of dielectric loss was observed at a frequency of 3 MHz and the Cole-Davidson empirical formula was used to determine the relaxation time. It was concluded that the native point defects such as nitrogen vacancies and DX centers formed with the involvement of Si atoms into the AlN layers might have influenced the electrical conduction and dielectric relaxation properties of the plasma-assisted ALD grown AlN films.

  1. Effects of Concentration and Substrate Type on Structure and Conductivity of p-Type CuS Thin Films Grown by Spray Pyrolysis Deposition

    Science.gov (United States)

    Sabah, Fayroz A.; Ahmed, Naser M.; Hassan, Z.

    2016-09-01

    Copper sulphide (CuS) thin films were grown upon Ti, indium tin oxide (ITO), and glass substrates by using spray pyrolysis deposition at 200°C. The films exhibited good adhesion compared to chemical bath deposition. CuCl2·2H2O and Na2S2O3·5H2O precursors were used as Cu2+ and S2- sources, respectively. Two concentrations (i.e., 0.2 M and 0.4 M) were selected in this study. X-ray diffraction analysis reveals that the films with 0.2 M showed only the formation of a covellite CuS phase having a hexagonal crystal structure with diffraction peaks of low intensity. For 0.4 M concentration, in addition to the covellite CuS phase, chalcocite Cu2S phase having a hexagonal crystal structure also appeared with relatively higher intensity peaks for all thin films. Field-emission scanning electron microscopy observations showed the formation of small grains for 0.2 M, whereas a mixture of grains with square-like shape and nanoplates were formed for 0.4 M. Depending on the 0.2 M and 0.4 M thin films thicknesses (3.2 μm and 4 μm, respectively), the band gap energy was obtained from optical measurements to be approximately 2.64 eV for 0.2 M (pure CuS phase), which slightly decreased up to 2.56 eV for 0.4 M concentration. Hall effect measurements showed that all grown films are p-type. The 0.2 M film exhibited much lower sheet resistance (R sh = 33.96 Ω/Sq-55.70 Ω/Sq) compared to 0.4 M film (R sh = 104.33 Ω/Sq-466.6 Ω/Sq). Moreover, for both concentrations, the films deposited onto ITO substrate showed the lowest sheet resistance (R sh = 33.96 Ω/Sq-104.33 Ω/Sq).

  2. Effects of Concentration and Substrate Type on Structure and Conductivity of p-Type CuS Thin Films Grown by Spray Pyrolysis Deposition

    Science.gov (United States)

    Sabah, Fayroz A.; Ahmed, Naser M.; Hassan, Z.

    2017-01-01

    Copper sulphide (CuS) thin films were grown upon Ti, indium tin oxide (ITO), and glass substrates by using spray pyrolysis deposition at 200°C. The films exhibited good adhesion compared to chemical bath deposition. CuCl2·2H2O and Na2S2O3·5H2O precursors were used as Cu2+ and S2- sources, respectively. Two concentrations (i.e., 0.2 M and 0.4 M) were selected in this study. X-ray diffraction analysis reveals that the films with 0.2 M showed only the formation of a covellite CuS phase having a hexagonal crystal structure with diffraction peaks of low intensity. For 0.4 M concentration, in addition to the covellite CuS phase, chalcocite Cu2S phase having a hexagonal crystal structure also appeared with relatively higher intensity peaks for all thin films. Field-emission scanning electron microscopy observations showed the formation of small grains for 0.2 M, whereas a mixture of grains with square-like shape and nanoplates were formed for 0.4 M. Depending on the 0.2 M and 0.4 M thin films thicknesses (3.2 μm and 4 μm, respectively), the band gap energy was obtained from optical measurements to be approximately 2.64 eV for 0.2 M (pure CuS phase), which slightly decreased up to 2.56 eV for 0.4 M concentration. Hall effect measurements showed that all grown films are p-type. The 0.2 M film exhibited much lower sheet resistance ( R sh = 33.96 Ω/Sq-55.70 Ω/Sq) compared to 0.4 M film ( R sh = 104.33 Ω/Sq-466.6 Ω/Sq). Moreover, for both concentrations, the films deposited onto ITO substrate showed the lowest sheet resistance ( R sh = 33.96 Ω/Sq-104.33 Ω/Sq).

  3. The multiscale simulation of metal organic chemical vapor deposition growth dynamics of GaInP thin film

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    As a Group III–V compound, GaInP is a high-efficiency luminous material. Metal organic chemical vapor deposition (MOCVD) technology is a very efficient way to uniformly grow multi-chip, multilayer and large-area thin film. By combining the computational fluid dynamics (CFD) and the kinetic Monte Carlo (KMC) methods with virtual reality (VR) technology, this paper presents a multiscale simulation of fluid dynamics, thermodynamics, and molecular dynamics to study the growth process of GaInP thin film in a vertical MOCVD reactor. The results of visualization truly and intuitively not only display the distributional properties of the gas’ thermal and flow fields in a MOCVD reactor but also display the process of GaInP thin film growth in a MOCVD reactor. The simulation thus provides us with a fundamental guideline for optimizing GaInP MOCVD growth.

  4. Pulsed laser deposition of Sr2FeMoO6 thin films grown on spark plasma sintered Sr2MgWO6 substrates

    Science.gov (United States)

    Santosh, M.; Lacotte, M.; David, A.; Boullay, Ph; Grygiel, C.; Pravarthana, D.; Rohrer, G. S.; Salvador, P. A.; Padhan, P.; Lüders, U.; Wang, Junling; Prellier, W.

    2017-06-01

    Sr2FeMoO6 (SFMO) films were deposited on polycrystalline spark plasma synthesized Sr2MgWO6 (SMWO) substrates. Films were grown using pulsed laser deposition at temperatures (T dep) between 720 °C and 820 °C in a vacuum environment of pressure {{P}\\text{dep}}={{10}-6} mbar (0.1 mPa); after deposition they were cooled either in a pressure {{P}\\text{cool}}={{P}\\text{dep}} or {{P}\\text{cool}}={{10}-4} mbar (10 mPa) O2. Despite the use of an isostructural substrate, the growth and cooling conditions play the primary role in determining details of the films’ structures and properties, similarly to single-crystals. Grazing x-ray and electron back-scatter diffraction indicate that vacuum-cooled films were pure perovskite-structured SFMO exhibiting grain-over-grain growth that aligned the perovskite sub-cells. SrMoO4 impurities were observed in the x-ray patterns for the oxygen-cooled films similarly to single-crystal substrates. Magnetic, electronic and magnetoresistive properties were all a function of growth and cooling environments. The Curie temperature and magnetization of the films increased with T dep up to 800 °C. The vacuum-cooled films had low-resistivities with essentially metallic conductivity (small resistivity increases occurred at low-T), while the conductivity of oxygen-cooled films were consistent with variable range hopping. The oxygen-cooled films had higher low-field magnetoresistance effects at 5 K than the vacuum-cooled films, which seems consistent with SrMoO4 forming at grain boundaries. This work opens the route to tailor the electronic properties by engineering the grain boundaries in thin films.

  5. Control of the magnetic properties of LaMnO3 epitaxial thin films grown by Pulsed Laser Deposition

    Science.gov (United States)

    Martinez, Benjamin; Roqueta, Jaume; Pomar, Alberto; Balcells, Lluis; Frontera, Carlos; Konstantinovic, Zorica; Sandiumenge, Felip; Santiso, Jose; Advanced materials characterization Team; Thin films growth Team

    2015-03-01

    LaMnO3 (LMO), the parent compound of colossal magnetoresistance based manganites has gained renewed attention as a building block in heterostructures with unexpected properties. In its bulk phase, stoichiometric LMO is an A-type antiferromagnetic (AFM) insulator (TN = 140K) with orthorhombic structure that easily accommodate an oxygen excess by generating cationic (La or Mn) vacancies. As a result, a fraction of Mn 3+ changes to Mn 4+ leading to a double-exchange mediated ferromagnetic (FM) behavior. In thin films the AFM phase has been elusive up to now and thin films with FM ordering are usually reported. In this work, we have systematically studied the growth process of LaMnO3 thin films by pulsed laser deposition on SrTiO3 (001) substrates under different oxygen partial pressures (PO2) . A close correlation between the structure (explored by XRD) and the magnetic properties (SQUID measurements) of the films with PO2 has been identified. At high PO2 FM behavior is observed. In contrast, at very low PO2, the results obtained for unit cell volume (close to stoichiometric bulk values) and magnetic moment (0.2 μB/Mn) strongly indicate antiferromagnetic ordering. We acknowledge financial support from the Spanish MINECO (MAT2012-33207).

  6. Plasma-enhanced chemical vapor deposition of low- loss as-grown germanosilicate layers for optical waveguides

    Science.gov (United States)

    Ay, Feridun; Agan, Sedat; Aydinli, Atilla

    2004-08-01

    We report on systematic growth and characterization of low-loss germanosilicate layers for use in optical waveguides. Plasma enhanced chemical vapor deposition (PECVD) technique was used to grow the films using silane, germane and nitrous oxide as precursor gases. Chemical composition was monitored by Fourier transform infrared (FTIR) spectroscopy. N-H bond concentration of the films decreased from 0.43x1022 cm-3 down to below 0.06x1022 cm-3, by a factor of seven as the GeH4 flow rate increased from 0 to 70 sccm. A simultaneous decrease of O-H related bonds was also observed by a factor of 10 in the same germane flow range. The measured TE rate increased from 5 to 50 sccm, respectively. In contrast, the propagation loss values for TE polarization at λ=632.8 nm were found to increase from are 0.20 +/- 0.02 to 6.46 +/- 0.04 dB/cm as the germane flow rate increased from 5 to 50 sccm, respectively. In contrast, the propagation loss values for TE polarization at λ=1550 nm were found to decrease from 0.32 +/- 0.03 down to 0.14 +/- 0.06 dB/cm for the same samples leading to the lowest values reported so far in the literature, eliminating the need for high temperature annealing as is usually done for these materials to be used in waveguide devices.

  7. Evaluation of freestanding boron-doped diamond grown by chemical vapour deposition as substrates for vertical power electronic devices

    Energy Technology Data Exchange (ETDEWEB)

    Issaoui, R.; Achard, J.; Tallaire, A.; Silva, F.; Gicquel, A. [LSPM-CNRS (formerly LIMHP), Universite Paris 13, 99, Avenue Jean-Baptiste Clement, 93430 Villetaneuse (France); Bisaro, R.; Servet, B.; Garry, G. [Thales Research and Technology France, Campus de Polytechnique, 1 Avenue Augustin Fresnel, F-91767 Palaiseau Cedex (France); Barjon, J. [GEMaC-CNRS, Universite de Versailles Saint Quentin Batiment Fermat, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France)

    2012-03-19

    In this study, 4 x 4 mm{sup 2} freestanding boron-doped diamond single crystals with thickness up to 260 {mu}m have been fabricated by plasma assisted chemical vapour deposition. The boron concentrations measured by secondary ion mass spectroscopy were 10{sup 18} to 10{sup 20} cm{sup -3} which is in a good agreement with the values calculated from Fourier transform infrared spectroscopy analysis, thus indicating that almost all incorporated boron is electrically active. The dependence of lattice parameters and crystal mosaicity on boron concentrations have also been extracted from high resolution x-ray diffraction experiments on (004) planes. The widths of x-ray rocking curves have globally shown the high quality of the material despite a substantial broadening of the peak, indicating a decrease of structural quality with increasing boron doping levels. Finally, the suitability of these crystals for the development of vertical power electronic devices has been confirmed by four-point probe measurements from which electrical resistivities as low as 0.26 {Omega} cm have been obtained.

  8. GaN MOS-HEMT Using Ultra-Thin Al2O3 Dielectric Grown by Atomic Layer Deposition

    Institute of Scientific and Technical Information of China (English)

    YUE Yuan-Zheng; HAO Yue; FENG Qian; ZHANG Jin-Cheng; MA Xiao-Hua; NI Jin-Yu

    2007-01-01

    @@ We report a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with atomic layer deposited (ALD) Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 (2005) 063501] of Ye et al. By decreeing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of 100mS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional AlGaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.

  9. Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition

    Institute of Scientific and Technical Information of China (English)

    Liang Song; Wang Wei; Zhu Hong-Liang; Pan Jiao-Qing; Zhao Ling-Juan; Wang Lu-Feng; Zhou Fan; Shu Hui-Yun; Bian Jing; An Xin

    2008-01-01

    Photoluminescence (PL) and lasing properties of InAs/GaAs quantum dots (QDs) with different growth procedures prepared by metalorganic chemical vapour deposition are studied.PL measurements show that the low growth rate QD sample has a larger PL intensity and a narrower PL line width than the high growth rate sample.During rapid thermal annealing,however,the low growth rate sample shows a greater blueshift of PL peak wavelength.This is caused by the larger InAs layer thickness which results from the larger 2-3 dimensional transition critical layer thickness for the QDs in the low-growth-rate sample.A growth technique including growth interruption and in-situ annealing,named indium flush method,is used during the growth of GaAs cap layer,which can flatten the GaAs surface effectively.Though the method results in a blueshift of PL peak wavelength and a broadening of PL line width,it is essential for the fabrication of room temperature working QD lasers.

  10. Surface and Compositional Study of Graphene grown on Lithium Niobate (LiNbO3) substrates by Chemical Vapour Deposition

    Science.gov (United States)

    Karamat, Shumaila; Celik, Umit; Oral, Ahmet

    The diversity required in the designing of electronic devices motivated the community to always attempt for new functional materials and device structures. Graphene is considered as one of the most promising candidate materials for future electronics and carbon based devices. It is very exciting to combine graphene with new dielectric materials which exhibit multifunctional properties. Lithium Niobate exhibits ferro-, pyro-, and piezoelectric properties with large electro-optic, acousto-optic, and photoelastic coefficients as well as strong photorefractive and photovoltaic effects which made it one of the most extensively studied materials over the last 50 years. We used ambient pressure chemical vapour deposition to grow graphene on LiNbO3 substrates without any catalyst. The growth was carried out in presence of methane, argon and hydrogen. AFM imaging showed very unique structures on the surface which contains triangular domains. X-ray photoelectron spectroscopy (XPS) was used to get information about the presence of necessary elements, their bonding with LiNbO3 substrates. Detailed characterization is under process which will be presented later.

  11. Dielectric, impedance and ferroelectric characteristics of c-oriented bismuth vanadate films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kumari, Neelam [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Krupanidhi, S.B. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India); Varma, K.B.R. [Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)]. E-mail: kbrvarma@mrc.iisc.ernet.in

    2007-03-15

    Ferroelectric bismuth vandante, Bi{sub 2}VO{sub 5.5} (BVO) thin films with layered perovskite structure were deposited by pulsed excimer laser ablation technique on (1 1 1) Pt/TiO{sub 2}/SiO{sub 2}/Si substrates. The polarization hysteresis (P versus E) studies on the BVO thin films at 300 K confirmed the remnant polarization (P {sub r}) and coercive field (E {sub c}) to be 5.6 {mu}C/cm{sup 2} and 113 kV/cm, respectively. The same was corroborated via the capacitance-voltage measurements. The dielectric response and conduction mechanism of BVO thin films under small ac fields were analyzed using impendence spectroscopy. A strong low frequency dielectric dispersion (LFDD) was found to exist in these films, which was ascribed to the presence of the ionized space charge carriers such as oxygen ion vacancies and interfacial polarization. The room temperature dielectric constant and the loss (D) at 100 kHz were 233 and 0.07, respectively. The thermal activation energy for the relaxation process of the ionized space charge carriers was 0.85 eV. The frequency characteristics of BVO thin films under study showed universal dynamic response that was proposed by Jonscher for the systems associated with quasi-free charges.

  12. Crystal Engineering for Low Defect Density and High Efficiency Hybrid Chemical Vapor Deposition Grown Perovskite Solar Cells.

    Science.gov (United States)

    Ng, Annie; Ren, Zhiwei; Shen, Qian; Cheung, Sin Hang; Gokkaya, Huseyin Cem; So, Shu Kong; Djurišić, Aleksandra B; Wan, Yangyang; Wu, Xiaojun; Surya, Charles

    2016-12-07

    Synthesis of high quality perovskite absorber is a key factor in determining the performance of the solar cells. We demonstrate that hybrid chemical vapor deposition (HCVD) growth technique can provide high level of versatility and repeatability to ensure the optimal conditions for the growth of the perovskite films as well as potential for batch processing. It is found that the growth ambient and degree of crystallization of CH3NH3PbI3 (MAPI) have strong impact on the defect density of MAPI. We demonstrate that HCVD process with slow postdeposition cooling rate can significantly reduce the density of shallow and deep traps in the MAPI due to enhanced material crystallization, while a mixed O2/N2 carrier gas is effective in passivating both shallow and deep traps. By careful control of the perovskite growth process, a champion device with power conversion efficiency of 17.6% is achieved. Our work complements the existing theoretical studies on different types of trap states in MAPI and fills the gap on the theoretical analysis of the interaction between deep levels and oxygen. The experimental results are consistent with the theoretical predictions.

  13. Nitrogen-doped graphene sheets grown by chemical vapor deposition: synthesis and influence of nitrogen impurities on carrier transport.

    Science.gov (United States)

    Lu, Yu-Fen; Lo, Shun-Tsung; Lin, Jheng-Cyuan; Zhang, Wenjing; Lu, Jing-Yu; Liu, Fan-Hung; Tseng, Chuan-Ming; Lee, Yi-Hsien; Liang, Chi-Te; Li, Lain-Jong

    2013-08-27

    A significant advance toward achieving practical applications of graphene as a two-dimensional material in nanoelectronics would be provided by successful synthesis of both n-type and p-type doped graphene. However, reliable doping and a thorough understanding of carrier transport in the presence of charged impurities governed by ionized donors or acceptors in the graphene lattice are still lacking. Here we report experimental realization of few-layer nitrogen-doped (N-doped) graphene sheets by chemical vapor deposition of organic molecule 1,3,5-triazine on Cu metal catalyst. When reducing the growth temperature, the atomic percentage of nitrogen doping is raised from 2.1% to 5.6%. With increasing doping concentration, N-doped graphene sheet exhibits a crossover from p-type to n-type behavior accompanied by a strong enhancement of electron-hole transport asymmetry, manifesting the influence of incorporated nitrogen impurities. In addition, by analyzing the data of X-ray photoelectron spectroscopy, Raman spectroscopy, and electrical measurements, we show that pyridinic and pyrrolic N impurities play an important role in determining the transport behavior of carriers in our N-doped graphene sheets.

  14. Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

    Directory of Open Access Journals (Sweden)

    E. C. Romani

    2017-01-01

    Full Text Available We synthesized single-layer graphene from a liquid precursor (triisopropyl borate using a chemical vapor deposition. Optical microscopy, scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy measurements were used for the characterization of the samples. We investigated the effects of the processing temperature and time, as well as the vapor pressure of the precursor. The B1s core-level XPS spectra revealed the presence of boron atoms incorporated into substitutional sites. This result, corroborated by the observed upshift of both G and 2D bands in the Raman spectra, suggests the p-doping of single-layer graphene for the samples prepared at 1000°C and pressures in the range of 75 to 25 mTorr of the precursor vapor. Our results show that, in optimum conditions for single-layer graphene growth, that is, 1000°C and 75 mTorr for 5 minutes, we obtained samples presenting the coexistence of pristine graphene with regions of boron-doped graphene.

  15. Si–Cu alloy nanowires grown by oblique angle deposition as a stable negative electrode for Li-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Polat, B. D.; Keles, O.; Chen, Z. H.; Amine, K.

    2016-03-29

    Thin films having nanocolumnar arrays made of various Si–Cu atomic ratios (90–10, 80–20, 70–30 %) are fabricated by an ion-assisted oblique angle co-deposition technique to produce stable negative electrodes for lithium-ion batteries. Cu is added into the electrode because of its ductility and electron conductivity. Cu plays a crucial role in holding the electrode together, minimizing overall capacity loss and enabling faster electron transfer. Plus, Cu is inactive versus Li?; therefore, Si–Cu variation is expected to affect the electrochemical performances of the electrodes. In this work, the effect of Si–Cu atomic ratios on the morphologies and the structures of the electrodes are studied. Plus, the uses of these nanocolumns with different Cu contents are evaluated as anodes by electrochemical tests. The morphological analyses demonstrate that an increase in Si–Cu atomic ratio affects the width of the nanocolumns and the homogeneity of the thin film morphology. The increase in Cu content dramatically improves the capacity retention of Si–Cu anodes, whereas it decreases the initial discharge capacity.

  16. InGa1−N fibres grown on Au/SiO2 by chemical vapour deposition

    Indian Academy of Sciences (India)

    A Ramos-Carrazco; R García; M Barboza-Flores; R Rangel

    2014-12-01

    The growth of InGa1−N films ( = 0.1 and = 0.2) on a thin gold layer (Au/SiO2) by chemical vapour deposition (CVD) at 650 °C is reported. As a novelty, the use of a Ga–In metallic alloy to improve the indium incorporation in the InGa1−N is proposed. The results of high quality InGa1−N films with a thickness of three micrometres and the formation of microfibres on the surface are presented. A morphological comparison between the InGa1−N and GaN films is shown as a function of the indium incorporation. The highest crystalline InGa1−N films structure was obtained with an indium composition of = 0.20. Also, the preferential growth on the (002) plane over In0.2Ga0.8N was observed by means of X-ray diffraction. The thermoluminescence (TL) of the InGa1−N films after beta radiation exposure was measured indicating the presence of charge trapping levels responsible for a broad TL glow curve with a maximum intensity around 150 °C. The TL intensity was found to depend on composition being higher for = 0.1 and increases as radiation dose increases.

  17. Characterization of TiO{sub 2} thin films obtained by metal-organic chemical vapour deposition; Caracterizacao de filmes finos de TiO{sub 2} obtidos por deposicao quimica em fase vapor

    Energy Technology Data Exchange (ETDEWEB)

    Carriel, Rodrigo Crociati

    2015-07-01

    Titanium dioxide (TiO{sub 2}) thin films were grown on silicon substrate (100) by MOCVD process (chemical deposition of organometallic vapor phase). The films were grown at 400, 500, 600 and 700 ° C in a conventional horizontal equipment. Titanium tetraisopropoxide was used as source of both oxygen and titanium. Nitrogen was used as carrier and purge gas. X-ray diffraction technique was used for the characterization of the crystalline structure. Scanning electron microscopy with field emission gun was used to evaluate the morphology and thickness of the films. The films grown at 400 and 500°C presented anatase phase. The film grown at 600ºC presented rutile besides anatase phase, while the film grown at 700°C showed, in addition to anatase and rutile, brookite phase. In order to evaluate the electrochemical behavior of the films cyclic voltammetry technique was used. The tests revealed that the TiO2 films formed exclusively by the anatase phase exhibit strong capacitive character. The anodic current peak is directly proportional to the square root of the scanning rate for films grown at 500ºC, suggesting that linear diffusion is the predominant mechanism of cations transport. It was observed that in the film grown during 60 minutes the Na+ ions intercalation and deintercalation easily. The films grown in the other conditions did not present the anodic current peak, although charge was accumulated in the film. (author)

  18. Performance of Erbium-doped TiO2 thin film grown by physical vapor deposition technique

    Science.gov (United States)

    Lahiri, Rini; Ghosh, Anupam; Dwivedi, Shyam Murli Manohar Dhar; Chakrabartty, Shubhro; Chinnamuthu, P.; Mondal, Aniruddha

    2017-09-01

    Undoped and Erbium-doped TiO2 thin films (Er:TiO2 TFs) were fabricated on the n-type Si substrate using physical vapour deposition technique. Field emission scanning electron microscope showed the morphological change in the structure of Er:TiO2 TF as compared to undoped sample. Energy dispersive X-ray spectroscopy (EDX) confirmed the Er doping in the TiO2 thin film (TF). The XRD and Raman spectrum showed the presence of anatase phase TiO2 and Er2O3 in the Er:TiO2 TF. The Raman scattering depicted additional number of vibrational modes for Er:TiO2 TF due to the presence of Er as compared to the undoped TiO2 TF. The UV-Vis absorption measurement showed that Er:TiO2 TF had approximately 1.2 times more absorption over the undoped TiO2 TF in the range of 300-400 nm. The main band transition, i.e., the transition between the oxygen (2p) state and the Ti (3d) state was obtained at 3.0 eV for undoped TiO2 and at 3.2 eV for Er:TiO2 TF, respectively. The photo responsivity measurement was done on both the detectors, where Er:TiO2 TF detector showed better detectivity ( D *), noise equivalent power and temporal response as compared to undoped detector under ultra-violet illumination.

  19. InP/InGaAlAs distributed Bragg reflectors grown by low-pressure metal organic chemical vapor deposition

    Science.gov (United States)

    Lu, T. C.; Tsai, J. Y.; Chu, J. T.; Chang, Y. S.; Wang, S. C.

    2003-04-01

    Long-wavelength vertical cavity surface emitting lasers (VCSELs) are considered the best candidate for the future low-cost reliable light sources in fiber communications. However, the absence of high refractive index contrast in InP-lattice-matched materials impeded the development of 1.3-1.5 μm VCSELs. Although wafer fusions provided the alternative approaches to integrate the InP-based gain materials with the GaAs/AlAs materials for their inherent high refractive index contrast, the monolithic InP-based lattice-matched distributed Bragg reflectors (DBRs) are still highly attractive and desirable. In this report, we demonstrate InP/InGaAlAs DBRs with larger refractive index contrast than InP/InGaAsP and InAlAs/InGaAlAs DBRs. The switching between InP and InGaAlAs layers and growth rate control have been done by careful growth interruption technique and accurate in situ optical monitoring in low-pressure metal organic chemical vapor deposition. A 35 pairs 1.55 μm centered InP/InGaAlAs DBRs has the stopband of more than 100 nm and the highest reflectivity of more than 99%. A VCSEL structure incorporating 35 pairs InP/InGaAlAs DBR as the bottom mirror combined with a 2 λ thick periodic gain cavity and 10 pairs SiO 2/TiO 2 top dielectric mirrors was fabricated. The VCSELs lased at 1.56 μm by optical pumping at room temperature with the threshold pumping power of 30 mW.

  20. Structure and optical properties of Si and SiGe layers grown on SiO{sub 2} by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shklyaev, A.A., E-mail: shklyaev@isp.nsc.ru [A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Vdovin, V.I. [A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Volodin, V.A. [A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Gulyaev, D.V.; Kozhukhov, A.S. [A.V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Sakuraba, M.; Murota, J. [Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2015-03-31

    The properties of thin Si and SiGe layers grown on SiO{sub 2} by chemical vapor deposition (CVD) were studied using transmission electron and atomic force microscopies, and Raman and photoluminescence (PL) spectroscopies. The layers with a composition of Si{sub 0.5}Ge{sub 0.5} become composed of nanocrystals with an average size of about 100 nm at growth temperatures of 550 °C which is significantly lower than that for the pure Si layers. Moreover, the Si{sub 0.5}Ge{sub 0.5} layers exhibit a broad PL peak centered at 0.8 eV, whereas the bandgap of unstrained Si{sub 0.5}Ge{sub 0.5} is about 1 eV. This indicates that PL occurs through deep energy levels in the bandgap, which can be associated with crystal defects. The predominance of deep-level PL in radiative emission can be the result of a high concentration of defects that appear due to a low growth temperature. - Highlights: • The Si{sub 0.5}Ge{sub 0.5} layers grown on SiO{sub 2} become polycrystalline at 550 °C. • They exhibit a PL peak at 0.8 eV, whereas the Si{sub 0.5}Ge{sub 0.5} bandgap is about 1 eV. • Such properties make the layers interesting for applications in photonics.