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Sample records for deposition cvd technology

  1. A Study on Medium Temperature Chemical Vapor Deposition (MT-CVD) Technology and Super Coating Materials

    Institute of Scientific and Technical Information of China (English)

    GAO Jian; LI Jian-ping; ZENG Xiang-cai; MA Wen-cun

    2004-01-01

    In this paper, the dense and columnar crystalline TiCN coating layers with very good bonding strength between a layer and another layer was deposited using Medium Temperature Chemical Vapor Deposition (MT-CVD) where CH3CN organic composite with C/N atomic clusters etc. was utilized at 700 ~ 900 ℃. Effect of coating processing parameters, such as coating temperature, pressure and different gas flow quantity on structures and properties of TiCN coating layers were investigated. The super coating mechanis mand structures were analyzed. The new coating processing parameters and properties of carbide inserts with super coating layers were gained by using the improved high temperature chemical vapor deposition (HTCVD) equipment and HT-CVD, in combination with MT-CVD technology.

  2. Deposition and Coating Properties on CVD Tungsten

    Institute of Scientific and Technical Information of China (English)

    DU Ji-hong; LI Zheng-xiang; LIU Gao-jian; ZHOU Hui-Huang; CHUN liang

    2004-01-01

    Surface characterization and microstructure studies are performed on chemical vapor deposited (CVD) tungsten coating. There is about 2 μm thickness diffusion layer of tungsten in the molybdenum substrate. The thermal shock test shows tungsten coating has good adhesion with molybdenum substrate, but the elements of oxygen and carbon in the tungsten coating have the bad affection to the adhesion. The result of high-temperature diffusion experiment is the diffusion rate from molybdenum substrate to tungsten coating is faster.

  3. Comparative evaluation of CVD diamond technologies

    Energy Technology Data Exchange (ETDEWEB)

    Anthony, T.R. [General Electric Corporate Research & Development Center, Schenectady, NY (United States)

    1993-01-01

    Chemical vapor deposition (CVD) of diamonds occurs from hydrogen-hydrocarbon gas mixtures in the presence of atomic hydrogen at subatmospheric pressures. Most CVD methods are based on different means of generating and transporting atomic hydrogen in a particular system. Evaluation of these different techniques involves their capital costs, material costs, energy costs, labor costs and the type and quality of diamond that they produce. Currently, there is no universal agreement on which is the best technique and technique selection has been largely driven by the professional background of the user as well as the particular application of interest. This article discusses the criteria for evaluating a process for low-pressure deposition of diamond. Next, a brief history of low-pressure diamond synthesis is reviewed. Several specific processes are addressed, including the hot filament process, hot filament electron-assisted chemical vapor deposition, and plasma generation of atomic hydrogen by glow discharge, microwave discharge, low pressure radio frequency discharge, high pressure DC discharge, high pressure microwave discharge jets, high pressure RF discharge, and high and low pressure flames. Other types of diamond deposition methods are also evaluated. 101 refs., 15 figs.

  4. Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films

    DEFF Research Database (Denmark)

    Leervad Pedersen, T.P.; Skov Jensen, J.; Chevallier, J.

    2005-01-01

    The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can...

  5. High-rate diamond deposition by microwave plasma CVD

    Science.gov (United States)

    Li, Xianglin

    In this dissertation, the growth of CVD (Chemical Vapor Deposition) diamond thin films is studied both theoretically and experimentally. The goal of this research is to deposit high quality HOD (Highly Oriented Diamond) films with a growth rate greater than 1 mum/hr. For the (100)-oriented HOD films, the growth rate achieved by the traditional process is only 0.3 mum/hr while the theoretical limit is ˜0.45 mum/hr. This research increases the growth rate up to 5.3 mum/hr (with a theoretical limit of ˜7 mum/hr) while preserving the crystal quality. This work builds a connection between the theoretical study of the CVD process and the experimental research. The study is extended from the growth of regular polycrystalline diamond to highly oriented diamond (HOD) films. For the increase of the growth rate of regular polycrystalline diamond thin films, a scaling growth model developed by Goodwin is introduced in details to assist in the understanding of the MPCVD (Microwave Plasma CVD) process. Within the Goodwin's scaling model, there are only four important sub-processes for the growth of diamond: surface modification, adsorption, desorption, and incorporation. The factors determining the diamond growth rate and film quality are discussed following the description of the experimental setup and process parameters. Growth rate and crystal quality models are reviewed to predict and understand the experimental results. It is shown that the growth rate of diamond can be increased with methane input concentration and the amount of atomic hydrogen (by changing the total pressure). It is crucial to provide enough atomic hydrogen to conserve crystal quality of the deposited diamond film. The experimental results demonstrate that for a fixed methane concentration, there is a minimum pressure for growth of good diamond. Similarly, for a fixed total pressure, there is a maximum methane concentration for growth of good diamond, and this maximum methane concentration increases

  6. EFFECTS OF OPERATING CONDITIONS ON THE DEPOSITION OF GaAs IN A VERTICAL CVD REACTOR

    OpenAIRE

    JAE-SANG BAEK; JIN-HYO BOO; YOUN-JEA KIM

    2008-01-01

    A numerical study is needed to gain insight into the growth mechanism and improve the reactor design or optimize the deposition condition in chemical vapor deposition (CVD). In this study, we have performed a numerical analysis of the deposition of gallium arsenide (GaAs) from trimethyl gallium (TMG) and arsine in a vertical CVD reactor. The effects of operating parameters, such as the rotation velocity of susceptor, inlet velocity, and inlet TMG fraction, are investigated and presented. The ...

  7. Thin film zinc oxide deposited by CVD and PVD

    Science.gov (United States)

    Hamelmann, Frank U.

    2016-10-01

    Zinc oxide is known as a mineral since 1810, but it came to scientific interest after its optoelectronic properties found to be tuneable by p-type doping. Since the late 1980’s the number of publications increased exponentially. All thin film deposition technologies, including sol-gel and spray pyrolysis, are able to produce ZnO films. However, for outstanding properties and specific doping, only chemical vapor deposition and physical vapor deposition have shown so far satisfying results in terms of high conductivity and high transparency. In this paper the different possibilities for doping will be discussed, some important applications of doped ZnO thin films will be presented. The deposition technologies used for industrial applications are shown in this paper. Especially sputtering of aluminium doped Zinc Oxide (ZnO:Al or AZO) and LPCVD of boron doped Zinc Oxide (ZnO:B or BZO) are used for the commercial production of transparent conductive oxide films on glass used for thin film photovoltaic cells. For this special application the typical process development for large area deposition is presented, with the important trade-off between optical properties (transparency and ability for light scattering) and electrical properties (conductivity). Also, the long term stability of doped ZnO films is important for applications, humidity in the ambient is often the reason for degradation of the films. The differences between the mentioned materials are presented.

  8. Rare earth-doped alumina thin films deposited by liquid source CVD processes

    Energy Technology Data Exchange (ETDEWEB)

    Deschanvres, J.L.; Meffre, W.; Joubert, J.C.; Senateur, J.P. [Ecole Nat. Superieure de Phys. de Grenoble, St. Martin d`Heres (France). Lab. des Materiaux et du Genie Phys.; Robaut, F. [Consortium des Moyens Technologiques Communs, Institut National Polytechnique de Grenoble, BP 75, 38402 St Martin d`Heres (France); Broquin, J.E.; Rimet, R. [Laboratoire d`Electromagnetisme, Microondes et Optoelectronique, CNRS-Ecole Nationale Superieure d`Electronique et Radioelectricite de Grenoble, BP 257, 38016 Grenoble, Cedex (France)

    1998-07-24

    Two types of liquid-source CVD processes are proposed for the growth of rare earth-doped alumina thin films suitable as amplifying media for integrated optic applications. Amorphous, transparent, pure and erbium- or neodymium-doped alumina films were deposited between 573 and 833 K by atmospheric pressure aerosol CVD. The rare earth doping concentration increases by decreasing the deposition temperature. The refractive index of the alumina films increases as a function of the deposition temperature from 1.53 at 573 K to 1.61 at 813 K. Neodymium-doped films were also obtained at low pressure by liquid source injection CVD. (orig.) 7 refs.

  9. Tantalum Coating of Steel, Copper, Aluminum, and Titanium by Thermal Chemical Vapor Deposition (CVD)

    DEFF Research Database (Denmark)

    Christensen, Erik; Bjerrum, Niels

    1998-01-01

    Tantalum coatings ranging from 0.5 to 120 mm has been deposited by CVD at 625-1000 C using tantalum pentachloride as precursor. Deposition rates range from 1 to 80mm/h and an activation energy of 103 kJ/mole is calculated. Well adhering deposits has been obtained on stainless steel, carbon steels...

  10. Chemical vapor deposition (CVD) of uranium for alpha spectrometry; Deposicion quimica de vapor (CVD) de uranio para espectrometria alfa

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez V, M. L.; Rios M, C.; Ramirez O, J.; Davila R, J. I.; Mireles G, F., E-mail: luisalawliet@gmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

    2015-09-15

    The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

  11. Purification of Single-walled Carbon Nanotubes Grown by a Chemical Vapour Deposition (CVD) Method

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    A procedure for purification of single-walled carbon nanotubes(SWNTs) grown by the chemical vapour deposition (CVD) of carbon monooxide has been developed. Based on the result from TGA/DTA of as-prepared sample, the oxidation temperature was determined. The process included sonication, oxidation and acid washing steps. The purity and yield after purification were determined and estimated by TEM. Moreover, for the first time, a loop structure for CVD SWNTs has been observed.

  12. Improved CVD Techniques for Depositing Passivation Layers of ICs

    Science.gov (United States)

    1975-10-01

    went into compressive stress of 1.3 x 10 dynes/cm2. Results NX • thus show that room-temperature stress in CVD films can be reduced to nearly 35 -4 0...fluorescence working curves. X-ray fluorescence radiation measurements were carried out using a Siemens Crystalloflex 4 x-ray generator with a chromium target x...ray tube (2000 W) and a Siemens Vacuum X-Ray Spectrometer Model VRS. Sample area of measurement was usually 0.50 cm2 . 2= Experimental results will be

  13. Thin alumina and silica films by chemical vapor deposition (CVD)

    OpenAIRE

    Hofman, R.; Morssinkhof, R.W.J.; Fransen, T.; Westheim, J.G.F.; Gellings, P.J.

    1993-01-01

    Alumina and silica coatings have been deposited by MOCVD (Metal Organic Chemical Vapor Deposition) on alloys to protect them against high temperature corrosion. Aluminium Tri-lsopropoxide (ATI) and DiAcetoxyDitertiaryButoxySilane (DAOBS) have been used as metal organic precursors to prepare these ceramic coatings. The influence of several process steps on the deposition rate and surface morphology is discussed. The deposition of SiO2 at atmospheric pressure is kinetically limited below 833 K ...

  14. Thin alumina and silica films by chemical vapor deposition (CVD)

    NARCIS (Netherlands)

    Hofman, R.; Morssinkhof, R.W.J.; Fransen, T.; Westheim, J.G.F.; Gellings, P.J.

    1993-01-01

    Alumina and silica coatings have been deposited by MOCVD (Metal Organic Chemical Vapor Deposition) on alloys to protect them against high temperature corrosion. Aluminium Tri-lsopropoxide (ATI) and DiAcetoxyDitertiaryButoxySilane (DAOBS) have been used as metal organic precursors to prepare these ce

  15. Oxidation Resistance of CVD (Chemical Vapor Deposition) Coatings

    Science.gov (United States)

    1987-02-01

    carbonaceous residuoe were overcome, and dense, iadherent, coat-ings which :ýtop oxidat-ion Of the substrate art! reliably produced. The iridium deposition...flow, pressure and geometry within the reaction chamber, and substrate material. For the coating to have high integrity and adhesion to the substrate...entirely produced by Ultramet using chemical vapor deposition and a novel integrated fabrication technique. Coating the inside of a long chamber presents

  16. Advances in the chemical vapor deposition (CVD) of Tantalum

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Christensen, Erik

    2014-01-01

    The chemical stability of tantalum in hot acidic media has made it a key material in the protection of industrial equipment from corrosion under such conditions. The Chemical Vapor Deposition of tantalum to achieve such thin corrosion resistant coatings is one of the most widely mentioned examples...

  17. Handbook of chemical vapor deposition principles, technology and applications

    CERN Document Server

    Pierson, Hugh O

    1999-01-01

    Turn to this new second edition for an understanding of the latest advances in the chemical vapor deposition (CVD) process. CVD technology has recently grown at a rapid rate, and the number and scope of its applications and their impact on the market have increased considerably. The market is now estimated to be at least double that of a mere seven years ago when the first edition of this book was published. The second edition is an update with a considerably expanded and revised scope. Plasma CVD and metallo-organic CVD are two major factors in this rapid growth. Readers will find the latest

  18. Numerical modeling of chemical vapor deposition (CVD) in a horizontal reactor

    Science.gov (United States)

    Sheikholeslami, M. Z.; Jasinski, T.; Fretz, K. W.

    1988-01-01

    In the present numerical prediction of the deposition rate of silicon from silane in a CVD process, the conservation equations for mass, momentum, energy, and chemical species are solved on a staggered grid using the SIMPLE algorithm, while the rate of chemical reactions in the gas phase and on the susceptor surface is obtained from an Arrhenius rate equation. Predicted deposition rates as a function of position along the susceptor with and without the gas phase chemical reaction are compared with the available experimental and numerical data; agreement is excellent except at the leading edge of the susceptor, where the deposition rate is overpredicted.

  19. Hot wire CVD deposition of nanocrystalline silicon solar cells on rough substrates

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongbo B.T., E-mail: h.li@uu.n [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, P.O. Box 80000, 3508 TA Utrecht (Netherlands); Werf, Karine H.M. van der; Rath, Jatin K.; Schropp, Ruud E.I. [Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, P.O. Box 80000, 3508 TA Utrecht (Netherlands)

    2009-04-30

    In silicon thin film solar cell technology, frequently rough or textured substrates are used to scatter the light and enhance its absorption. The important issue of the influence of substrate roughness on silicon nanocrystal growth has been investigated through a series of nc-Si:H single junction p-i-n solar cells containing i-layers deposited with Hot-wire CVD. It is shown that silicon grown on the surface of an unoptimized rough substrate contains structural defects, which deteriorate solar cell performance. By introducing parameter v, voids/substrate area ratio, we could define a criterion for the morphology of light trapping substrates for thin film silicon solar cells: a preferred substrate should have a v value of less than around 1 x 10{sup -6}, correlated to a substrate surface rms value of lower than around 50 nm. Our Ag/ZnO substrates with rms roughness less than this value typically do not contain microvalleys with opening angles smaller than {approx} 110{sup o}, resulting in solar cells with improved output performance. We suggest a void-formation model based on selective etching of strained Si-Si atoms due to the collision of growing silicon film surface near the valleys of the substrate.

  20. Abnormal Crystallization of Silicon Thin Films Deposited by ICP-CVD

    Institute of Scientific and Technical Information of China (English)

    LI Jun-Shuai; YIN Min; WANG Jin-Xiao; HE De-Yan

    2005-01-01

    @@ Silicon thin films are deposited by inductively coupled plasma chemical vapour deposition (ICP-CVD) at a low temperature of 350℃ using a mixture of SiH4 and H2. The structures of the films are characterized by x-ray diffraction and Raman spectra. Under the optimum experimental conditions, we observe that the crystallinity of Si films becomes more excellent and the preferred orientation changes from (111) to (220) with the decreasing dilution of SiH4 in H2. Such an abnormal crystallization is tentatively interpreted in term of the high density,low electron temperature and spatial confinement of the plasma in the process of ICP-CVD.

  1. Deposition of device quality silicon nitride with ultra high deposition rate (> 7 nm/s) using hot-wire CVD

    NARCIS (Netherlands)

    Verlaan, V.; Houweling, Z.S.; van der Werf, C.H.M.; Romijn, I.G.; Schropp, R.E.I.; Goldbach, H.D.

    2008-01-01

    The application of hot-wire (HW) CVD deposited silicon nitride (SiNx) as passivating anti-reflection coating on multicrystalline silicon (mc-Si) solar cells is investigated. The highest efficiency reached is 15.7% for SiNx layers with an N/Si ratio of 1.20 and a high mass density of 2.9 g/cm3. These

  2. A novel Mo-W interlayer approach for CVD diamond deposition on steel

    Directory of Open Access Journals (Sweden)

    Vojtěch Kundrát

    2015-04-01

    Full Text Available Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42 substrates using a multi-structured molybdenum (Mo – tungsten (W interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

  3. A novel Mo-W interlayer approach for CVD diamond deposition on steel

    Energy Technology Data Exchange (ETDEWEB)

    Kundrát, Vojtěch; Sullivan, John; Ye, Haitao, E-mail: h.ye@aston.ac.uk [School of Engineering and Applied Science, Aston University, Birmingham, B4 7ET (United Kingdom); Zhang, Xiaoling; Cooke, Kevin; Sun, Hailin [Miba Coating Group: Teer Coatings Ltd, West-Stone-House, West-Stone, Berry-Hill-Industrial-Estate, WR9 9AS, Droitwich (United Kingdom)

    2015-04-15

    Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD) processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42) substrates using a multi-structured molybdenum (Mo) – tungsten (W) interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

  4. Stable dropwise condensation for enhancing heat transfer via the initiated chemical vapor deposition (iCVD) of grafted polymer films.

    Science.gov (United States)

    Paxson, Adam T; Yagüe, Jose L; Gleason, Karen K; Varanasi, Kripa K

    2014-01-22

    Ultra-thin copolymer films are deposited by initiated chemical deposition (iCVD) to investigate their performance under the condensation of water vapor. By forming a grafted interface between the coating and the substrate, the films exhibit stable dropwise condensation even when subjected to 100 °C steam. The applicability of the iCVD to complex substrate geometries is demonstrated on a copper condenser coil.

  5. Effect of substrate bias on deposition behaviour of charged silicon nanoparticles in ICP-CVD process

    Science.gov (United States)

    Yoo, Seung-Wan; You, Shin-Jae; Kim, Jung-Hyung; Seong, Dae-Jin; Seo, Byong-Hoon; Hwang, Nong-Moon

    2017-01-01

    The effect of a substrate bias on the deposition behaviour of crystalline silicon films during inductively coupled plasma chemical vapour deposition (ICP-CVD) was analysed by consideration of non-classical crystallization, in which the building block is a nanoparticle rather than an individual atom or molecule. The coexistence of positively and negatively charged nanoparticles in the plasma and their role in Si film deposition are confirmed by applying bias voltages to the substrate, which is sufficiently small as not to affect the plasma potential. The sizes of positively and negatively charged nanoparticles captured on a carbon membrane and imaged using TEM are, respectively, 2.7-5.5 nm and 6-13 nm. The film deposited by positively charged nanoparticles has a typical columnar structure. In contrast, the film deposited by negatively charged nanoparticles has a structure like a powdery compact with the deposition rate about three times higher than that for positively charged nanoparticles. All the films exhibit crystallinity even though the substrate is at room temperature, which is attributed to the deposition of crystalline nanoparticles formed in the plasma. The film deposited by negatively charged nanoparticles has the highest crystalline fraction of 0.84.

  6. Zirconium influence on microstructure of aluminide coatings deposited on nickel substrate by CVD method

    Indian Academy of Sciences (India)

    Jolanta Romanowska; Maryana Zagula-Yavorska; Jan Sieniawski

    2013-11-01

    Influence of Zr on the microstructure and phase characteristics of aluminide diffusion coatings deposited on the nickel substrate has been investigated in this study. The coatings with and without zirconium were deposited by CVD method. The cross-section chemical composition investigations revealed that during the coatings formation, there is an inward aluminum diffusion and outward nickel diffusion in both types of coatings (with and without zirconium), whereas zirconium is located far below the coating surface, at a depth of ∼17 m, between -NiAl phase and '-Ni3Al phase. XRD examinations showed that -NiAl, -NiAl and '-Ni3Al were the main components of the deposited coatings. -NiAl phase is on the surface of the coatings, whereas -NiAl and '-Ni3Al form deeper parts of the coatings. Zirconium is dissolved in NiAl on the border between -NiAl and '-Ni3Al.

  7. Optical and mechanical properties of diamond like carbon films deposited by microwave ECR plasma CVD

    Indian Academy of Sciences (India)

    S B Singh; M Pandey; N Chand; A Biswas; D Bhattacharya; S Dash; A K Tyagi; R M Dey; S K Kulkarni; D S Patil

    2008-10-01

    Diamond like carbon (DLC) films were deposited on Si (111) substrates by microwave electron cyclotron resonance (ECR) plasma chemical vapour deposition (CVD) process using plasma of argon and methane gases. During deposition, a d.c. self-bias was applied to the substrates by application of 13.56 MHz rf power. DLC films deposited at three different bias voltages (–60 V, –100 V and –150 V) were characterized by FTIR, Raman spectroscopy and spectroscopic ellipsometry to study the variation in the bonding and optical properties of the deposited coatings with process parameters. The mechanical properties such as hardness and elastic modulus were measured by load depth sensing indentation technique. The DLC film deposited at –100 V bias exhibit high hardness (∼ 19 GPa), high elastic modulus (∼ 160 GPa) and high refractive index (∼ 2.16–2.26) as compared to films deposited at –60 V and –150 V substrate bias. This study clearly shows the significance of substrate bias in controlling the optical and mechanical properties of DLC films.

  8. Deposition of ZnO Films on Freestanding CVD Thick Diamond Films

    Institute of Scientific and Technical Information of China (English)

    SUN Jian; BAI Yi-Zhen; YANG Tian-Peng; XU Yi-Bin; WANG Xin-Sheng; DU Guo-Tong; WU Han-Hua

    2006-01-01

    @@ For ZnO/diamond structured surface acoustic wave (SAW) filters, performance is sensitively dependent on the quality of the ZnO films. In this paper, we prepare highly-oriented and fine grained polycrystalline ZnO thin films with excellent surface smoothness on the smooth nucleation surfaces of freestanding CVD diamond films by metal organic chemical vapour deposition (MOCVD). The properties of the ZnO films are characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) spectrum. The influences of the deposition conditions on the quality of ZnO films are discussed briefly. ZnO/freestanding thick-diamond-film layered SAW devices with high response frequencies are expected to be developed.

  9. An economic CVD technique for pure SnO2 thin films deposition: Temperature effects

    Indian Academy of Sciences (India)

    M Maleki; S M Rozati

    2013-04-01

    A modified new method of CVD for formation of pure layers of tin oxide films was developed. This method is very simple and inexpensive and produces films with good electrical properties. The effect of substrate temperature on the sheet resistance, resistivity, mobility, carrier concentration and transparency of the films has been studied. The best sheet resistance obtained at substrate temperature of 500 ◦C was about 27 /cm2. X-ray diffraction showed that the structure of deposited films was polycrystalline with a grain size between 150–300 Å. The preferred orientation was (211) for films deposited at substrate temperature of about 500 °C. FESEM micrographs revealed that substrate temperature is an important factor for increasing grain size and modifies electrical parameters. UV-visible measurement showed reduction of transparency and bandgap of the layers with increasing substrate temperature.

  10. Field emission from carbon films deposited by VHF CVD on difference substrates

    Energy Technology Data Exchange (ETDEWEB)

    Abramov, A A; Andronov, A N; Felter, T E; Ioffe, A F; Kosarev, A I; Shotov, M V; Vinogradov, A J

    1999-04-01

    As previously demonstrated, non-diamond carbon (NDC) films deposited at low temperatures 200-300 C on silicon tips reduced the threshold of field emission. In this paper we will present the results of the study of field emission from flat NDC films prepared by VHF CVD. Emission measurements were performed in a diode configuration at approximately 10{sup {minus}10} Torr. NDC films were deposited on ceramic and on c-Si substrates sputter coated with layers of Ti, Cu, Ni and Pt. The back contact material influences the emission characteristics but not as a direct correlation to work function. A model of field emission from metal-NDC film structures will be discussed.

  11. Simultaneous synthesis of nanodiamonds and graphene via plasma enhanced chemical vapor deposition (MW PE-CVD) on copper.

    Science.gov (United States)

    Gottlieb, Steven; Wöhrl, Nicolas; Schulz, Stephan; Buck, Volker

    2016-01-01

    The simultaneous growth of both nanodiamonds and graphene on copper samples is described for the first time. A PE-CVD process is used to synthesize graphene layers and nanodiamond clusters from a hydrogen/methane gas mixture as it is typically done successfully in thermal CVD processes for graphene synthesis. However, the standard thermal CVD process is not without problems since the deposition of graphene is affected by the evaporation of a notable amount of copper caused by the slow temperature increase typical for thermal CVD resulting in a long process time. In sharp contrast, the synthesis of graphene by PE-CVD can circumvent this problem by substantially shortening the process time at holding out the prospect of a lower substrate temperature. The reduced thermal load and the possibility to industrially scale-up the PE-CVD process makes it a very attractive alternative to the thermal CVD process with respect to the graphene production in the future. Nanodiamonds are synthesized in PE-CVD reactors for a long time because these processes offer a high degree of control over the film's nanostructure and simultaneously providing a significant high deposition rate. To model the co-deposition process, the three relevant macroscopic parameters (pressure, gas mixture and microwave power) are correlated with three relevant process properties (plasma ball size, substrate temperature and C2/Hα-ratio) and the influence on the quality of the deposited carbon allotropes is investigated. For the evaluation of the graphene as well as the nanodiamond quality, Raman spectroscopy used whereas the plasma properties are measured by optical methods. It is found that the diamond nucleation can be influenced by the C2/Hα-ratio in the plasma, while the graphene quality remains mostly unchanged by this parameter. Moreover it is derived from the experimental data that the direct plasma contact with the copper surface is beneficial for the nucleation of the diamond while the growth and

  12. Initiated Chemical Vapor Deposition (iCVD) Polymer Thin Films: Structure-Property Effects on Thermal Degradation and Adhesion

    Science.gov (United States)

    Bharamaiah Jeevendrakumar, Vijay Jain

    Opportunities and challenges for chemical vapor deposition (CVD) of polymer thin films stems from their applications in electronics, sensors, and adhesives with demands for control over film composition, conformity and stability. Initiated chemical vapor deposition (iCVD) is a subset of the CVD technique that conjoins bulk free-radical polymerization chemistry with gas-phase processing. The novelty of iCVD technique stems from the use of an initiator that can be activated at low energies (150 -- 300 °C) to react with surface adsorbed monomer to form a polymer film. This reduces risk for potential unwarranted side-reactions. Until recently, majority of iCVD research was limited to understanding the deposition kinetics with monomer properties being the principal parameters. However, there is a lack of study on the properties of deposited films which is critical for utilizing the technique in any real-world applications. The work presented here aims to advance investigation in this direction by characterizing the thermal properties of iCVD polymer films with primary focus on the initiators. A detailed characterization of custom-built iCVD system served as ground work for following investigations. Poly(neopentyl methacrylate) (PnPMA) thin films were deposited with tert-butyl peroxide (TBPO) initiators and their Tg, CTE and thermal degradation properties were investigated. iCVD PnPMA films presented low-temperature degradation peaks attributed to weak linkages from H-abstraction and beta-scission reactions of TBPO. To test this hypothesis, PnPMA films were deposited with tert-butyl peroxybenzoate (TBPOB) which is selective towards vinyl addition. Contrary to expected results, TBPOB initiated films showed degradation at lower temperatures compared to TBPO initiated films. It is postulated that with TBPOB, the surface initiator concentration is higher and consequently small oligomeric molecules were formed that degraded easily. Following these investigations, poly

  13. High-speed deposition of titanium carbide coatings by laser-assisted metal–organic CVD

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Yansheng [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tu, Rong, E-mail: turong@whut.edu.cn [State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Goto, Takashi [Institute for Materials Research, Tohoku University, Aoba-ku, 2-1-1 Katahira, Sendai 980-8577 (Japan)

    2013-08-01

    Graphical abstract: - Highlights: • A semiconductor laser was first used to prepare wide-area LCVD-TiC{sub x} coatings. • The effect of laser power for the deposition of TiC{sub x} coatings was discussed. • TiC{sub x} coatings showed a columnar cross section and a dense surface texture. • TiC{sub x} coatings had a 1–4 order lower laser density than those of previous reports. • This study gives the possibility of LCVD applying on the preparation of TiC{sub x} coating. - Abstract: A semiconductor laser-assisted chemical vapor deposition (LCVD) of titanium carbide (TiC{sub x}) coatings on Al{sub 2}O{sub 3} substrate using tetrakis (diethylamido) titanium (TDEAT) and C{sub 2}H{sub 2} as source materials were investigated. The influences of laser power (P{sub L}) and pre-heating temperature (T{sub pre}) on the microstructure and deposition rate of TiC{sub x} coatings were examined. Single phase of TiC{sub x} coatings were obtained at P{sub L} = 100–200 W. TiC{sub x} coatings had a cauliflower-like surface and columnar cross section. TiC{sub x} coatings in the present study had the highest R{sub dep} (54 μm/h) at a relative low T{sub dep} than those of conventional CVD-TiC{sub x} coatings. The highest volume deposition rate (V{sub dep}) of TiC{sub x} coatings was about 4.7 × 10{sup −12} m{sup 3} s{sup −1}, which had 3–10{sup 5} times larger deposition area and 1–4 order lower laser density than those of previous LCVD using CO{sub 2}, Nd:YAG and argon ion laser.

  14. The optoelectronic properties of silicon films deposited by inductively coupled plasma CVD

    Energy Technology Data Exchange (ETDEWEB)

    Qin Yanli; Yan Hengqing; Li Fei; Qiao Li; Liu Qiming [Department of Physics, Lanzhou University, Lanzhou 730000 (China); He Deyan, E-mail: hedy@lzu.edu.cn [Department of Physics, Lanzhou University, Lanzhou 730000 (China)

    2010-11-15

    Hydrogenated amorphous and microcrystalline silicon films were deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at low substrate temperatures using H{sub 2}-diluted SiH{sub 4} as a source gas. High-density plasma generated by inductively coupled excitation facilitates the crystallization of silicon films at low temperatures, and microcrystalline silicon films were obtained at the substrate temperature as low as 180 deg. C. The columnar structure of the films becomes more and more compact with an increase of their crystallinity. The reduction of hydrogen content in the films causes a narrowing of the optical bandgap and an enhancement of the absorption with increasing the substrate temperature. The microcrystalline silicon films show two electronic transport mechanisms: one is related to the density of state distribution in the temperature region near room temperature and the other is the variable range hopping between localized electronic states close to the Fermi level below 170 K. A reasonable explanation is presented for the dependence of the optoelectronic properties on the microstructure of the silicon films. The films prepared at a substrate temperature of 300 deg. C have highly crystalline and compact columnar structure, high optical absorption coefficient and electrical conductivity, and a low hydrogen content of 3.8%.

  15. Cutting characteristics of dental diamond burs made with CVD technology Características de corte de pontas odontológicas diamantadas obtidas pela tecnologia CVD

    Directory of Open Access Journals (Sweden)

    Luciana Monti Lima

    2006-04-01

    Full Text Available The aim of this study was to determine the cutting ability of chemical vapor deposition (CVD diamond burs coupled to an ultrasonic dental unit handpiece for minimally invasive cavity preparation. One standard cavity was prepared on the mesial and distal surfaces of 40 extracted human third molars either with cylindrical or with spherical CVD burs. The cutting ability was compared regarding type of substrate (enamel and dentin and direction of handpiece motion. The morphological characteristics, width and depth of the cavities were analyzed and measured using scanning electron micrographs. Statistical analysis using the Kruskal-Wallis test (p O objetivo deste estudo foi determinar a habilidade de corte das pontas de diamante obtidas pelo processo de deposição química a vapor (CVD associadas ao aparelho de ultra-som no preparo cavitário minimamente invasivo. Uma cavidade padronizada foi preparada nas faces mesial e distal de 40 terceiros molares, utilizando-se pontas de diamante CVD cilíndrica e esférica. A habilidade de corte foi comparada quanto ao tipo de substrato (esmalte e dentina e quanto à direção do movimento realizado com a ponta. As características morfológicas, a largura e profundidade das cavidades foram analisadas e medidas em microscopia eletrônica de varredura. A análise estatística pelo teste de Kruskal-Wallis (p < 0,05 revelou que a largura e profundidade das cavidades foram significativamente maiores em dentina. Cavidades mais largas foram obtidas quando se utilizou a ponta de diamante CVD cilíndrica, e mais profundas quando a ponta esférica foi empregada. A direção do movimento da ponta não influenciou o tamanho das cavidades, sendo os cortes produzidos pelas pontas de diamante CVD precisos e conservadores.

  16. Properties of Boron-dopedμc-Ge:H Films Deposited by Hot-wire CVD

    Institute of Scientific and Technical Information of China (English)

    HUANG Haibin; SHEN Honglie; WU Tianru; LU Linfeng; TANG Zhengxia; SHEN Jiancang

    2015-01-01

    Boron-doped hydrogenated microcrystalline Germanium (μc-Ge:H)fi lms were deposited by hot-wire CVD. H2 diluted GeH4 and B2H6 were used as precursors and the substrate temperature was kept at 300ć. The properties of the samples were analyzed by XRD, Raman spectroscopy, Fourier transform infrared spectrometer and Hall Effect measurement with Van der Pauw method. It is found that thefi lms are partially crystallized, with crystalline fractions larger than 45% and grain sizes smaller than 50 nm. The B-doping can enhance the crystallization but reduce the grain sizes, and also enhance the preferential growth of Ge (220). The conductivity of thefi lms increases and tends to be saturated with increasingdiborane-to-germane ratio . All the Hall mobilities of the samples are larger than 3.8 cm2·V-1·s-1. A high conductivity of 41.3Ω-1ίcm-1 is gained at=6.7%.

  17. Evaluating electrically insulating films deposited on V-4% Cr-4% Ti by reactive CVD

    Energy Technology Data Exchange (ETDEWEB)

    Park, J.H.; Cho, W.D. [Argonne National Lab., IL (United States)

    1997-04-01

    Previous CaO coatings on V-4%Cr-4%Ti exhibited high-ohmic insulator behavior even though a small amount of vanadium from the alloy was incorporated in the coating. However, when the vanadium concentration in the coatings is > 15 wt%, the coating becomes conductive. When the vanadium concentration is high in localized areas, a calcium vanadate phase that exhibits semiconductor behavior can form. To explore this situation, CaO and Ca-V-O coatings were produced on vanadium alloys by chemical vapor deposition (CVD) and by a metallic-vapor process to investigate the electrical resistance of the coatings. Initially, the vanadium alloy specimens were either charged with oxygen in argon that contained trace levels of oxygen, or oxidized for 1.5-3 h in a 1% CO-CO{sub 2} gas mixture or in air to form vanadium oxide at 625-650{degrees}C. Most of the specimens were exposed to calcium vapor at 800-850{degrees}C. Initial and final weights were obtained to monitor each step, and surveillance samples were removed for examination by optical and scanning electron microscopy and electron-energy-dispersive and X-ray diffraction analysis; the electrical resistivity was also measured. The authors found that Ca-V-O films exhibited insulator behavior when the ratio of calcium concentration to vanadium concentration R in the film was > 0.9, and semiconductor or conductor behavior for R < 0.8. However, in some cases, semiconductor behavior was observed when CaO-coated samples with R > 0.98 were exposed in liquid lithium. Based on these studies, the authors conclude that semiconductor behavior occurs if a conductive calcium vanadate phase is present in localized regions in the CaO coating.

  18. Deposition of TiC film on titanium for abrasion resistant implant material by ion-enhanced triode plasma CVD

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Yuhe, E-mail: zyh1120@hotmail.co.jp [School of Stomatology, China Medical University, Shen Yang (China); Wang Wei; Jia Xingya [School of Stomatology, China Medical University, Shen Yang (China); Akasaka, Tsukasa [Department of Health Science, School of Dental Medicine Hokkaido University, Sapporo (Japan); Liao, Susan [School of Materials Science and Engineering, Nanyang Technological University (Singapore); Watari, Fumio [Department of Health Science, School of Dental Medicine Hokkaido University, Sapporo (Japan)

    2012-12-01

    Highlights: Black-Right-Pointing-Pointer Deposition of Titanium Carbide (TiC) layer on titanium (Ti) surface has been demonstrated by an ion-enhanced triode plasma chemical vapor deposition (CVD) method. Black-Right-Pointing-Pointer The Vickers hardness of surface carbide was more than 2000, which confirmed its high abrasion resistance. Black-Right-Pointing-Pointer Physical and mechanical properties of the deposited TiC film on Ti were investigated to examine its potential application as an abrasion resistant implant material. - Abstract: Deposition of titanium carbide (TiC) layer on titanium (Ti) surface has been demonstrated by an ion-enhanced triode plasma chemical vapor deposition (CVD) method using a TiCl{sub 4} + CH{sub 4} + H{sub 2} gas mixture. Physical and mechanical properties of the deposited TiC film on Ti were investigated to examine its potential application as an abrasion resistant implant material. X-ray diffraction (XRD) showed that the specimen was consisted of TiC and Ti. Carbide layer of about 6 {mu}m thickness was observed on the cross section of the specimen by scanning electron microscopy (SEM). The Vickers hardness of surface carbide was more than 2000, which confirmed its high abrasion resistance.

  19. CVD technologies used in preparation of low dielectric constant CVD technologies used in preparation of low dielectric constant%ULSI低介电常数材料制备中的CVD技术

    Institute of Scientific and Technical Information of China (English)

    王鹏飞; 丁士进; 张卫; 王季陶; 李伟

    2001-01-01

    Various CVD technologies for preparing low dielectric constantmaterials in ULSI circuits are summarized. The processes of deposition of fluorinated silicon oxide thin films, fluorinated amorphous carbon thin films and polyimide films are discussed in detail. The APCVD and RTCVD methods applied to prepare parylene films and fluorinated silicon oxide thin films are also briefly imroduced.%综述了制备ULSI低介电常数材料的各种CVD技术。详细介绍PCVD技术淀积含氟氧化硅薄膜、含氟无定型碳膜与聚酰亚胺类薄膜的工艺,简要介绍了APCVD技术淀积聚对二甲苯类有机薄膜及RTCVD技术淀积SiOF薄膜的工艺。

  20. Aluminum and aluminum/silicon coatings on ferritic steels by CVD-FBR technology

    Energy Technology Data Exchange (ETDEWEB)

    Perez, F.J. [Grupo de Investigacion de Ingenieria de Superficies, Departamento de Ciencia de los Materiales, Facultad de Ciencias Quimicas, Universidad Complutense de Madrid, 28040 Madrid (Spain)]. E-mail: fjperez@quim.ucm.es; Hierro, M.P. [Grupo de Investigacion de Ingenieria de Superficies, Departamento de Ciencia de los Materiales, Facultad de Ciencias Quimicas, Universidad Complutense de Madrid, 28040 Madrid (Spain); Trilleros, J.A. [Grupo de Investigacion de Ingenieria de Superficies, Departamento de Ciencia de los Materiales, Facultad de Ciencias Quimicas, Universidad Complutense de Madrid, 28040 Madrid (Spain); Carpintero, M.C. [Grupo de Investigacion de Ingenieria de Superficies, Departamento de Ciencia de los Materiales, Facultad de Ciencias Quimicas, Universidad Complutense de Madrid, 28040 Madrid (Spain); Sanchez, L. [Grupo de Investigacion de Ingenieria de Superficies, Departamento de Ciencia de los Materiales, Facultad de Ciencias Quimicas, Universidad Complutense de Madrid, 28040 Madrid (Spain); Bolivar, F.J. [Grupo de Investigacion de Ingenieria de Superficies, Departamento de Ciencia de los Materiales, Facultad de Ciencias Quimicas, Universidad Complutense de Madrid, 28040 Madrid (Spain)

    2006-05-10

    The use of chemical vapor deposition by fluidized bed reactors (CVD-FBR) offers some advantages in comparison to other coating techniques such as pack cementation, because it allows coating deposition at lower temperatures than pack cementation and at atmospheric pressure without affecting the mechanical properties of material due to heat treatments of the bulk during coating process. Aluminum and aluminum/silicon coatings have been obtained on two different ferritics steels (P-91 and P-92). The coatings were analyzed using several techniques like SEM/EDX and XRD. The results indicated that both coatings were form by Fe{sub 2}Al{sub 5} intermetallic compound, and in the co-deposition the Si was incorporated to the Fe{sub 2}Al{sub 5} structure in small amounts.

  1. Low temperature back-surface-field contacts deposited by hot-wire CVD for heterojunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, D. [Universitat Politecnica de Catalunya, Grup de Recerca en Micro i Nanotecnologies, Jordi Girona 1-3, Barcelona 08034 (Spain)], E-mail: delfina@eel.upc.edu; Voz, C.; Martin, I.; Orpella, A.; Alcubilla, R. [Universitat Politecnica de Catalunya, Grup de Recerca en Micro i Nanotecnologies, Jordi Girona 1-3, Barcelona 08034 (Spain); Villar, F.; Bertomeu, J.; Andreu, J. [CeRMAE-Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Diagonal 647, Barcelona 08028 (Spain); Roca-i-Cabarrocas, P. [LPICM-Ecole Polytechnique, CNRS 91128 Palaiseau (France)

    2008-08-30

    The growing interest in using thinner wafers (< 200 {mu}m) requires the development of low temperature passivation strategies for the back contact of heterojunction solar cells. In this work, we investigate low temperature deposited back contacts based on boron-doped amorphous silicon films obtained by Hot-Wire CVD. The influence of the deposition parameters and the use of an intrinsic buffer layer have been considered. The microstructure of the deposited thin films has been comprehensively studied by Spectroscopic Ellipsometry in the UV-visible range. The effective recombination velocity at the back surface has been measured by the Quasi-Steady-State Photoconductance technique. Complete double-side heterojunction solar cells (1 cm{sup 2}) have been fabricated and characterized by External Quantum Efficiency and current-voltage measurements. Total-area conversion efficiencies up to 14.5% were achieved in a fully low temperature process (< 200 deg. C)

  2. Growth and Characterization of Silicon Carbide (SiC) Nanowires by Chemical Vapor Deposition (CVD) for Electronic Device Applications

    Science.gov (United States)

    Moore, Karina

    In recent years nanowires have gained a generous amount of interest because of the possible application of nanowires within electronic devices. A nanowire is a one dimensional semiconductor nanostructure with a diameter less than 100 nm. Nanowires have the potential to be a replacement for the present day complimentary metal oxide semiconductor (CMOS) technology; it is believed by 2020, a 5--6 nm gate length within field effect transistors (FET) would be realized and cease further miniaturization of electronic devices. SiC processes several unique chemical and physical properties that make it an attractive alternative to Si as a semiconductor material. Silicon carbide's properties make it a perfect candidate for applications such as high temperature sensors, x-ray emitters and high radiation sensors. The main objective of this thesis is to successfully grow silicon carbide nanowires on silicon substrates with the assistance of a metal catalyst, by the process of chemical vapor deposition (CVD). The contributions made by the work carried out in this thesis are broad. This is the first study that has carried out a comprehensive investigation into a wide range of metal catalyst for the growth of SiC nanowires by the process of chemical vapor deposition. The study proved that the surface tension interactions between the silicon substrate and the metal catalyst are the controlling factor in the determination of the diameter of the nanowires grown. This study also proved that the silicon substrate orientation has no impact on the growth of the nanowires, similar growth patterns occurred on both Si and Si substrates. The nanowires grown were characterized by a variety of different methods including scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS) and raman spectroscopy. The effect of temperature, growth temperature, growth time and the catalyst type used are investigated to determine the most suitable conditions necessary for SiC nanowire

  3. FTIR monitoring of industrial scale CVD processes

    Science.gov (United States)

    Hopfe, V.; Mosebach, H.; Meyer, M.; Sheel, D.; Grählert, W.; Throl, O.; Dresler, B.

    1998-06-01

    The goal is to improve chemical vapour deposition (CVD) and infiltration (CVI) process control by a multipurpose, knowledge based feedback system. For monitoring the CVD/CVI process in-situ FTIR spectroscopic data has been identified as input information. In the presentation, three commonly used, and distinctly different, types of industrial CVD/CVI processes are taken as test cases: (i) a thermal high capacity CVI batch process for manufacturing carbon fibre reinforced SiC composites for high temperature applications, (ii) a continuously driven CVD thermal process for coating float glass for energy protection, and (iii) a laser stimulated CVD process for continuously coating bundles of thin ceramic fibers. The feasibility of the concept with FTIR in-situ monitoring as a core technology has been demonstrated. FTIR monitoring sensibly reflects process conditions.

  4. Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Mengdi, E-mail: M.Yang@utwente.nl; Aarnink, Antonius A. I.; Kovalgin, Alexey Y.; Gravesteijn, Dirk J.; Wolters, Rob A. M.; Schmitz, Jurriaan [MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

    2016-01-15

    In this work, the authors developed hot-wire assisted atomic layer deposition (HWALD) to deposit tungsten (W) with a tungsten filament heated up to 1700–2000 °C. Atomic hydrogen (at-H) was generated by dissociation of molecular hydrogen (H{sub 2}), which reacted with WF{sub 6} at the substrate to deposit W. The growth behavior was monitored in real time by an in situ spectroscopic ellipsometer. In this work, the authors compare samples with tungsten grown by either HWALD or chemical vapor deposition (CVD) in terms of growth kinetics and properties. For CVD, the samples were made in a mixture of WF{sub 6} and molecular or atomic hydrogen. Resistivity of the WF{sub 6}-H{sub 2} CVD layers was 20 μΩ·cm, whereas for the WF{sub 6}-at-H-CVD layers, it was 28 μΩ·cm. Interestingly, the resistivity was as high as 100 μΩ·cm for the HWALD films, although the tungsten films were 99% pure according to x-ray photoelectron spectroscopy. X-ray diffraction reveals that the HWALD W was crystallized as β-W, whereas both CVD films were in the α-W phase.

  5. Deposition rate and morphology of carbon nanotubes at different positions in a CVD reactor

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Carbon nanotubes (CNTs) were synthesized through the catalytic decomposition of a ferroeene-xylene mixture in a horizontal chemical vapor deposition reactor.The deposition rate of CNTs along the axial direction was measured.The morphology of CNTs was observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM).The results showed that the deposition rate of CNTs along the axial direction first increased and later decreased,the position achieving the maximum deposition rate was influenced by the operating conditions.The morphologies of CNTs also changed along the axial direction.

  6. Filament poisoning at typical carbon nanotube deposition conditions by hot-filament CVD

    CSIR Research Space (South Africa)

    Oliphant, CJ

    2009-05-01

    Full Text Available This paper reports on the poisoning of tungsten filaments during the hot-filament chemical vapour deposition process at typical carbon nanotube (CNT) deposition conditions and filament temperatures ranging from 1400 to 2000 °C. The morphological...

  7. Field emissions of graphene films deposited on different substrates by CVD system

    Institute of Scientific and Technical Information of China (English)

    Wang Xiao-Ping; Liu Xiao-Fei; Liu Xin-Xin; Wang Li-Jun; Yang Can; Jing Long-Wei; Li Song-Kun; Pan Xiu-Fang

    2012-01-01

    Graphene films are deposited on copper (Cu) and aluminum (A1) substrates,respectively,by using a microwave plasma chemical vapour deposition technique.Furthermore,these graphene films are characterized by a field emission type scanning electron microscope (FE-SEM),Raman spectra,and field emission (FE) I-V measurements.It is found that the surface morphologies of the films deposited on Cu and Al substrates are different:the field emission property of graphene film deposited on the Cu substrate is better than that on the Al substrate,and the lowest turn-on field of 2.4 V/μm is obtained for graphene film deposited on the Cu substrate.The macroscopic areas of the graphene samples are all above 400 mm2.

  8. Structural and optical characterization of thick and thin polycrystalline diamond films deposited by microwave plasma activated CVD

    Indian Academy of Sciences (India)

    S K Pradhan; B Satpati; B P Bag; T Sharda

    2012-02-01

    Preliminary results of growth of thin diamond film in a recently installed 3 kW capacity microwave plasma activated CVD (MW-PACVD) system are being reported. The films were deposited on Si (100) substrate at 850°C using methane and hydrogen mixture at 1.5 kW MW power. The grown polycrystalline films were characterized by micro-Raman, transmission electron microscope (TEM), spectrophotometer and atomic force microscope (AFM). The results were compared with that of a thicker diamond film grown elsewhere in a same make MWPACVD system at relatively higher power densities. The presence of a sharp Raman peak at 1332 cm-1 confirmed the growth of diamond, and transmission spectra showed typical diamond film characteristics in both the samples. Typical twin bands and also a quintuplet twinned crystal were observed in TEM, further it was found that the twinned region in thin sample composed of very fine platelet like structure.

  9. Development Status of a CVD System to Deposit Tungsten onto UO2 Powder via the WCI6 Process

    Science.gov (United States)

    Mireles, O. R.; Kimberlin, A.; Broadway, J.; Hickman, R.

    2014-01-01

    Nuclear Thermal Propulsion (NTP) is under development for deep space exploration. NTP's high specific impulse (> 850 second) enables a large range of destinations, shorter trip durations, and improved reliability. W-60vol%UO2 CERMET fuel development efforts emphasize fabrication, performance testing and process optimization to meet service life requirements. Fuel elements must be able to survive operation in excess of 2850 K, exposure to flowing hydrogen (H2), vibration, acoustic, and radiation conditions. CTE mismatch between W and UO2 result in high thermal stresses and lead to mechanical failure as a result UO2 reduction by hot hydrogen (H2) [1]. Improved powder metallurgy fabrication process control and mitigated fuel loss can be attained by coating UO2 starting powders within a layer of high density tungsten [2]. This paper discusses the advances of a fluidized bed chemical vapor deposition (CVD) system that utilizes the H2-WCl6 reduction process.

  10. Effect of surface irradiation during the photo-CVD deposition of a-Si:H thin films. Hikari CVD ho ni yoru amorphous silicon sakuseiji no kiban hikari reiki koka

    Energy Technology Data Exchange (ETDEWEB)

    Tasaka, K.; Doering, H.; Hashimoto, K.; Fujishima, A. (The University of Tokyo, Tokyo (Japan))

    1990-12-06

    This paper shows the impact of the irradiation from an additional light source during the deposition of hydrogenated amorphous silicon by photo-CVD deposition. Using a mercury sensitized photo-CVD process from Disilan (Si {sub 2} H {sub 6}) and hydrogen, silicon was deposited. A 40W low pressure mercury lamp was applied as the light source. A portion of the substrate was in addition irradiated using an Xg-He lamp through a thermal filter. Irradiation of the substrate using only Xg-He lamp produced no deposition, since this light has a wavelength which is too long to produce the SiH {sub 3}-radicals needed for Si deposition. The additional Xg-He light source was discovered to cause an increased thickness of deposited a-Si:H film and a transmission of the band structure. The reasons of these are considered that the influence of irradiation is not limited to film thickness, but that irradiation also impacts the composition of the a-Si:H film so as to cause a reduction in the hydrogen content. 10 figs., 1 tab.

  11. Effect of PbI2 deposition rate on two-step PVD/CVD all-vacuum prepared perovskite

    Science.gov (United States)

    Ioakeimidis, Apostolos; Christodoulou, Christos; Lux-Steiner, Martha; Fostiropoulos, Konstantinos

    2016-12-01

    In this work we fabricate all-vacuum processed methyl ammonium lead halide perovskite by a sequence of physical vapour deposition of PbI2 and chemical vapour deposition (CVD) of CH3NH3I under a static atmosphere. We demonstrate that for higher deposition rate the (001) planes of PbI2 film show a higher degree of alignment parallel to the sample's surface. From X-ray diffraction data of the resulted perovskite film we derive that the intercalation rate of CH3NH3I is fostered for PbI2 films with higher degree of (001) planes alignment. The stoichiometry of the produced perovskite film is also studied by Hard X-ray photoelectron spectroscopy measurements. Complete all-vacuum perovskite solar cells were fabricated on glass/ITO substrates coated by an ultra-thin (5 nm) Zn-phthalocyanine film as hole selective layer. A dependence of residual PbI2 on the solar cells performance is displayed, while photovoltaic devices with efficiency up to η=11.6% were achieved.

  12. Silicon-Germanium Films Deposited by Low Frequency PE CVD: Effect of H2 and Ar Dilution

    Energy Technology Data Exchange (ETDEWEB)

    Kosarev, A; Torres, A; Hernandez, Y; Ambrosio, R; Zuniga, C; Felter, T E; Asomoza, R R; Kudriavtsev, Y; Silva-Gonzalez, R; Gomez-Barojas, E; Ilinski, A; Abramov, A S

    2005-09-22

    We have studied structure and electrical properties of Si{sub 1-Y}Ge{sub Y}:H films deposited by low frequency PE CVD over the entire composition range from Y=0 to Y=1. The deposition rate of the films and their structural and electrical properties were measured for various ratios of the germane/silane feed gases and with and without dilution by Ar and by H{sub 2}. Structure and composition was studied by Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS) and Fourier transform infrared (FTIR) spectroscopy. Surface morphology was characterized by atomic force microscopy (AFM). We found: (1) The deposition rate increased with Y maximizing at Y=1 without dilution. (2) The relative rate of Ge and Si incorporation is affected by dilution. (3) Hydrogen preferentially bonds to silicon. (4) Hydrogen content decreases for increasing Y. In addition, optical measurements showed that as Y goes for 0 to 1, the Fermi level moves from mid gap to the conduction band edge, i.e. the films become more n-type. No correlation was found between the pre-exponential and the activation energy of conductivity. The behavior of the conductivity {gamma}-factor suggests a local minimum in the density of states at E {approx} 0.33 eV for the films grown with or without H-dilution and E {approx} 0.25 eV for the films with Ar dilution.

  13. Influence of deposition rate on the structural properties of plasma-enhanced CVD epitaxial silicon

    Science.gov (United States)

    Chen, Wanghua; Cariou, Romain; Hamon, Gwenaëlle; Léal, Ronan; Maurice, Jean-Luc; Cabarrocas, Pere Roca i

    2017-01-01

    Solar cells based on epitaxial silicon layers as the absorber attract increasing attention because of the potential cost reduction. In this work, we studied the influence of the deposition rate on the structural properties of epitaxial silicon layers produced by plasma-enhanced chemical vapor deposition (epi-PECVD) using silane as a precursor and hydrogen as a carrier gas. We found that the crystalline quality of epi-PECVD layers depends on their thickness and deposition rate. Moreover, increasing the deposition rate may lead to epitaxy breakdown. In that case, we observe the formation of embedded amorphous silicon cones in the epi-PECVD layer. To explain this phenomenon, we develop a model based on the coupling of hydrogen and built-in strain. By optimizing the deposition conditions to avoid epitaxy breakdown, including substrate temperatures and plasma potential, we have been able to synthesize epi-PECVD layers up to a deposition rate of 8.3 Å/s. In such case, we found that the incorporation of hydrogen in the hydrogenated crystalline silicon can reach 4 at. % at a substrate temperature of 350 °C. PMID:28262840

  14. The effects of flow multiplicity on GaN deposition in a rotating disk CVD reactor

    Science.gov (United States)

    Gkinis, P. A.; Aviziotis, I. G.; Koronaki, E. D.; Gakis, G. P.; Boudouvis, A. G.

    2017-01-01

    The effect of gas flow multiplicity, i.e. the possibility of two very different flow regimes prevailing at random in a rotating disk metalorganic chemical vapor deposition (MOCVD) reactor, on the deposited GaN film is investigated. A transport model coupled with a system of chemical reactions in the gas phase and on the wafer where the film is formed, is implemented in the parameter regions where multiple flows are possible. In the region of multiplicity where either plug flow, imposed by forced convection, or buoyancy-dominated flow is possible, the results in the latter case indicate high deposition rate and decreased uniformity. In the former case, increasing the pressure and the rotation rate has a favorable effect on the deposition rate without sacrificing uniformity. In the parameter window of multiplicity where either rotation or combined rotation/buoyancy may prevail, the effects of buoyancy lead to higher deposition rate at the center of the wafer and reduced uniformity. The Arrhenius plots in the regions of multiplicity for exactly the same operating conditions reveal that the system operates in a diffusion-limited regime in the plug flow and in the rotation-dominated flow, in the first and second region of multiplicity respectively. In contrast, in the buoyancy-dominated flow and the combined rotation/buoyancy flow (first and second region of multiplicity respectively) the process shifts into the kinetics-limited regime.

  15. Wearable technology to reduce sedentary behavior and CVD risk in older adults: Design of a randomized controlled trial

    Directory of Open Access Journals (Sweden)

    Lisa M. Krehbiel

    2017-06-01

    Full Text Available Persons aged over 65 years account for over the vast majority of healthcare expenditures and deaths attributable to cardiovascular disease (CVD. Accordingly, reducing CVD risk among older adults is an important public health priority. Structured physical activity (i.e. exercise is a well-documented method of decreasing CVD risk, but recent large-scale trials suggest that exercise alone is insufficient to reduce CVD events in high-risk populations of older adults. Thus adjuvant strategies appear necessary to reduce CVD risk. Accumulating evidence indicates that prolonged sedentary behavior (e.g. sitting has detrimental health effects that are independent of engagement in recommended levels of moderate-intensity exercise. Yet clinical trials in this area are lacking. We hypothesize that exercise, when combined with a novel technology based intervention specifically designed to reduce sedentary behavior will reduce CVD risk among sedentary older adults. The purpose of this study is to evaluate the feasibility and efficacy of combining a traditional, structured exercise intervention with an innovative intervention designed to decrease sedentary behavior and increase non-exercise physical activity (NEPA. This study will provide us with critical data necessary to design and implement a full-scale trial to test our central hypothesis. Participants aged ≥60 years with moderate to high risk of coronary heart disease (CHD events are randomly assigned to either the exercise and technology intervention (EX + NEPA or exercise alone (EX groups. Study dependent outcomes include changes in 1 daily activity patterns, 2 blood pressure, 3 exercise capacity, 4 waist circumference, and 5 circulating indices of cardiovascular function. This study will provide critical information for designing a fully-powered clinical trial, which could have health implications for the ever increasing population of older adults.

  16. Electro-spark deposition technology

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, R.N. [Pacific Northwest Lab., WA (United States)

    1996-08-01

    Electro-Spark Deposition (ESD) is a micro-welding process that uses short duration, high-current electrical pulses to deposit or alloy a consumable electrode material onto a metallic substrate. The ESD process was developed to produce coatings for use in severe environments where most other coatings fail. Because of the exceptional damage resistance of these coatings, and the versatility of the process to apply a wide variety of alloys, intermetallics, and cermets to metal surfaces, the ESD process has been designated as one of the enabling technologies for advanced energy systems. Developments include producing iron aluminide-based coatings with triple the corrosion resistance of the best previous Fe{sub 3}Al coatings, coatings with refractory metal diffusion barriers and multi layer coatings for achieving functionally gradient properties between the substrate and the surface. One of the most significant breakthroughs to occur in the last dozen years is the discovery of a process regime that promises an order of magnitude increase in deposition rates and achievable coating thicknesses. Since this regime borders on and exceeds the normal operating limits of existing ESD electronic equipment, development is in progress to produce equipment that can consistently and reliably achieve these conditions for a broad range of materials. Progress so far has resulted in a consistent 500% increase in deposition rates, and greater rates still are anticipated. Technology transfer activities are a significant portion of the ESD program effort. Notable successes now include the start-up of a new business to commercialize the ESD technology, the incorporation of the process into the operations of a major gas turbine manufacturer, major new applications in gas turbine blade and steam turbine blade protection and repair, and in military, medical, metal-working, and recreational equipment applications.

  17. TiAlN and TiAlCN deposition in an industrial PaCVD-plant

    Energy Technology Data Exchange (ETDEWEB)

    Heim, D.; Hochreiter, R. [Ruebig GmbH, Co., Wels (Austria)

    1998-01-01

    An industrial PaCVD-plant was equipped with an AlCl{sub 3}-generator. By using Ar, H{sub 2}, N{sub 2}, CH{sub 4}, TiCl{sub 4} and AlCl{sub 3}, TiAlN- and TiAlCN-films could be deposited on hard metal and steel substrates. The plasma was generated by a DC-pulse power supply with frequencies up to 50 kHz. The reactor size was 350 mm in diameter and 900 mm in height. During one batch 1200 indexable inserts could be coated. The growth rates were about 1-3 {mu}m h{sup -1}. The deposited films show a fine structure and Cl-concentrations below 3%. The measured critical loads were between 30 and 40 N. Wear test results show an increase in tool life up to several 100% compared with uncoated or TiN-coated tools. (orig.) 7 refs.

  18. Diamond like carbon coatings deposited by microwave plasma CVD: XPS and ellipsometric studies

    Indian Academy of Sciences (India)

    R M Dey; M Pandey; D Bhattacharyya; D S Patil; S K Kulkarni

    2007-12-01

    Diamond-like carbon (DLC) films were deposited by microwave assisted chemical vapour deposition system using d.c. bias voltage ranging from –100 V to –300 V. These films were characterized by X-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry techniques for estimating 3/2 ratio. The 3/2 ratio obtained by XPS is found to have an opposite trend to that obtained by spectroscopic ellipsometry. These results are explained using sub-plantation picture of DLC growth. Our results clearly indicate that the film is composed of two different layers, having entirely different properties in terms of void percentage and 3/2 ratio. The upper layer is relatively thinner as compared to the bottom layer.

  19. The Formation of Nanocrystalline Diamond Coating on WC Deposited by Microwave Assisted Plasma CVD

    Science.gov (United States)

    Toff, M. R. M.; Hamzah, E.; Purniawan, A.

    2010-03-01

    Diamond is one form of carbon structure. The extreme hardness and high chemical resistant of diamond coatings determined that many works on this area relate to coated materials for tribological applications in biomedicine, as mechanical seals or cutting tools for hard machining operations. In the work, nanocrystalline diamond (NCD) coated tungsten carbide (WC) have been deposited by microwave assisted plasma chemical vapor deposition (MAPCVD) from CH4/H2 mixtures. Morphology of NCD was investigated by using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The quality of NCD is defined as ratio between diamond and non diamond and also full width at half maximum (FWHM) was determined using Raman spectra. The result found that the NCD structure can be deposited on WC surface using CH4/H2 gas mixture with grain size ˜20 nm to 100 nm. Increase %CH4 concentration due to increase the nucleation of NCD whereas decrease the quality of diamond. Based on Raman spectra, the quality of NCD is in the range ˜98.82-99.01% and 99.56-99.75% for NCD and microcrystalline (MCD), respectively. In addition, FWHM of NCD is high than MCD in the range of 8.664-62.24 cm-1 and 4.24-5.05 cm-1 for NCD and MCD respectively that indicate the crystallineity of NCD is smaller than MCD.

  20. Structural and optical properties of tellurium films obtained by chemical vapor deposition(CVD)

    Institute of Scientific and Technical Information of China (English)

    MA Yu-tian; GONG Zhu-Qing; XU Wei-Hong; HUANG Jian

    2006-01-01

    Tellurium thin films were prepared by the chemical vapor deposition method. The structure, surface morphology and optical properties of the Te thin films were analyzed by powder X-ray diffraction, scanning electron microscopy, FTIR transmission,UV/VIS/NIR transmission and reflectance. The results show that the films structural and optical properties are influenced by many factors such as film thickness, crystallite size and substrate temperature. The films as thick as 111-133 nm have high IR transmission across the full 8-13 μm band and highly blocking in the solar spectral region elsewhere, which indicates that Te films thickness in this region can be used as good solar radiation shields in radiative cooling devices.

  1. The effectiveness of Ti implants as barriers to carbon diffusion in Ti implanted steel under CVD diamond deposition conditions

    Energy Technology Data Exchange (ETDEWEB)

    Weiser, P.S.; Prawer, S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Hoffman, A. [Technion-Israel Inst. of Tech., Haifa (Israel). Dept. of Chemistry; Evan, P.J. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Paterson, P.J.K. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    The growth of chemical vapour deposited (CVD) diamond onto iron based substrates complicated by preferential soot formation and carbon diffusion into the substrate [1], leading to poor quality films and poor adhesion. In the initial stages of exposure to a microwave plasma, a layer of graphite is rapidly formed on an untreated Fe based substrate. Once this graphite layer reaches a certain thickness, reasonable quality diamond nucleates and grows upon it. However, the diamond film easily delaminates from the substrate, the weak link being the graphitic layer. Following an initial success in using a TiN barrier layer to inhibit the formation of such a graphitic layer the authors report on attempts to use an implanted Ti layer for the same purpose. This work was prompted by observation that, although the TiN proved to be an extremely effective diffusion barrier, adhesion may be further enhanced by the formation of a TiC interface layer between the diamond film and the Fe substrate. 3 refs., 6 figs.

  2. Investigation of phonon modes in gallium nitride nanowires deposited by thermal CVD

    Energy Technology Data Exchange (ETDEWEB)

    Rizal, Umesh, E-mail: umeshrizal680@gmail.com; Swain, Bibhu P., E-mail: bibhu.s@smit.smu.edu.in [Nano Processing Laboratory, Centre for Material Science and Nanotechnology, Sikkim Manipal Institute of Technology, Majitar, Rangpo, East Sikkim, India-737136 (India); Swain, Bhabani S., E-mail: bsswain@kookmin.ac.kr [School of Advanced Materials Engineering, Kookmin University, Sungbuk-gu, Jeongnung-dong, Seoul (Korea, Republic of)

    2016-04-13

    Gallium nitride nanowires (GaN-NWs) of diameters ranging from 20 to 80 nm were grown on the p-type Si substrate by Thermal Chemical Vapor Deposition (TCVD) using Iron (Fe) catalyst via VLS mechanism. Raman and FTIR spectra reveal the presence of broad transverse optic (TO) and longitudinal optic (LO) phonon peak spreads over 500-600 cm{sup −1} and 720 cm{sup −1} respectively. The detail deconvolution of integrated transverse and longitudinal phonon analysis reveals phonon confinement brought out by incorporation of hydrogen atom. The red shifts of TO and LO phonon peak position indicates nanosized effect. I{sub A1(LO)}/I{sub A1(TO)} increases from 0.073 to 1.0 and their respective fwhm{sub A1(LO)}/fwhm{sub A1(TO)} also increases from 0.71 to 1.31 with increasing H{sub 2} flow rate. E{sub 1}(LO) - E{sub 1}(TO) and A{sub 1}(LO) - A{sub 1}(TO) increases from 173.83 to 190.73 and 184.89 to 193.22 respectively. Apart from this usual TO and LO phonon, we have found Surface Optic (SO) phonon at 671 cm{sup −1} in FTIR spectra. The intensity of PL peak increases with increasing H{sub 2} dilution reveals efficient passivation of defect centre at surface of GaN-NWs.

  3. The deposition characteristics of copper(I) compounds for CVD by FT-IR spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hardcastle, F.D.; Peden, C.H.F.; Omstead, T.R.; Blewer, R.S. [Sandia National Labs., Albuquerque, NM (United States); Farkas, J.; Hampden-Smith, M.J.; Kodas, T.T. [New Mexico Univ., Albuquerque, NM (United States)

    1991-12-31

    Fourier transform-infrared spectroscopy (FT-IR) was used to investigate the adsorption and thermally-induced decomposition of copper (I) {beta}-diketonate precursors of the type (hfac)CuL, where hfac is the hexafluoroacetylacetonate bidentate ligand and L is trimethylphosphine or 1,5-cyclooctadiene. The (hfac)CuPMe{sub 3} precursor desorbs from the surface at very low temperatures whereas the (hfac)Cu(1,5-COD) dissociates on adsorption, liberating 1,5-COD and leaving a surface(hfac)Cu complex which can subsequently disproportionate. Evidence is provided for hydrogen-bonding between the hfac ligand and the surface silanols for (hfac)CuPMe{sub 3}, but not for (hfac)Cu(1,5-COD). These results are consistent with the selective behavior of these precursors for copper deposition and suggest that the selectivity of the (hfac)CuPMe{sub 3} and (hfac)Cu(1, 5-COD) precursors may be due to the ability of the hfac ligand to hydrogen bond to the surface silanol groups.

  4. The deposition characteristics of copper(I) compounds for CVD by FT-IR spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hardcastle, F.D.; Peden, C.H.F.; Omstead, T.R.; Blewer, R.S. (Sandia National Labs., Albuquerque, NM (United States)); Farkas, J.; Hampden-Smith, M.J.; Kodas, T.T. (New Mexico Univ., Albuquerque, NM (United States))

    1991-01-01

    Fourier transform-infrared spectroscopy (FT-IR) was used to investigate the adsorption and thermally-induced decomposition of copper (I) {beta}-diketonate precursors of the type (hfac)CuL, where hfac is the hexafluoroacetylacetonate bidentate ligand and L is trimethylphosphine or 1,5-cyclooctadiene. The (hfac)CuPMe{sub 3} precursor desorbs from the surface at very low temperatures whereas the (hfac)Cu(1,5-COD) dissociates on adsorption, liberating 1,5-COD and leaving a surface(hfac)Cu complex which can subsequently disproportionate. Evidence is provided for hydrogen-bonding between the hfac ligand and the surface silanols for (hfac)CuPMe{sub 3}, but not for (hfac)Cu(1,5-COD). These results are consistent with the selective behavior of these precursors for copper deposition and suggest that the selectivity of the (hfac)CuPMe{sub 3} and (hfac)Cu(1, 5-COD) precursors may be due to the ability of the hfac ligand to hydrogen bond to the surface silanol groups.

  5. Chemical vapour deposition of tungsten and tungsten silicide layers for applications in novel silicon technology

    CERN Document Server

    Li, F X

    2002-01-01

    This work was a detailed investigation into the Chemical Vapour Deposition (CVD) of tungsten and tungsten silicide for potential applications in integrated circuit (IC) and other microelectronic devices. These materials may find novel applications in contact schemes for transistors in advanced ICs, buried high conductivity layers in novel Silicon-On-Insulator (SOI) technology and in power electronic devices. The CVD techniques developed may also be used for metal coating of recessed or enclosed features which may occur in novel electronic or electromechanical devices. CVD of tungsten was investigated using the silicon reduction reaction of WF sub 6. W layers with an optimum self-limiting thickness of 100 nm and resistivity 20 mu OMEGA centre dot cm were produced self-aligned to silicon. A hydrogen passivation technique was developed as part of the wafer pre-clean schedule and proved essential in achieving optimum layer thickness. Layers produced by this approach are ideal for intimate contact to shallow junct...

  6. Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).

    Science.gov (United States)

    Böke, Frederik; Giner, Ignacio; Keller, Adrian; Grundmeier, Guido; Fischer, Horst

    2016-07-20

    Densely sintered aluminum oxide (α-Al2O3) is chemically and biologically inert. To improve the interaction with biomolecules and cells, its surface has to be modified prior to use in biomedical applications. In this study, we compared two deposition techniques for adhesion promoting SiOx films to facilitate the coupling of stable organosilane monolayers on monolithic α-alumina; physical vapor deposition (PVD) by thermal evaporation and plasma enhanced chemical vapor deposition (PE-CVD). We also investigated the influence of etching on the formation of silanol surface groups using hydrogen peroxide and sulfuric acid solutions. The film characteristics, that is, surface morphology and surface chemistry, as well as the film stability and its adhesion properties under accelerated aging conditions were characterized by means of X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), inductively coupled plasma-optical emission spectroscopy (ICP-OES), and tensile strength tests. Differences in surface functionalization were investigated via two model organosilanes as well as the cell-cytotoxicity and viability on murine fibroblasts and human mesenchymal stromal cells (hMSC). We found that both SiOx interfaces did not affect the cell viability of both cell types. No significant differences between both films with regard to their interfacial tensile strength were detected, although failure mode analyses revealed a higher interfacial stability of the PE-CVD films compared to the PVD films. Twenty-eight day exposure to simulated body fluid (SBF) at 37 °C revealed a partial delamination of the thermally deposited PVD films whereas the PE-CVD films stayed largely intact. SiOx layers deposited by both PVD and PE-CVD may thus serve as viable adhesion-promoters for subsequent organosilane coupling agent binding to α-alumina. However, PE-CVD appears to be favorable for long-term direct film exposure to aqueous

  7. Characterizations of microwave plasma CVD grown polycrystalline diamond coatings for advanced technological applications

    Directory of Open Access Journals (Sweden)

    Awadesh Kumar Mallik

    2014-06-01

    Full Text Available Polycrystalline diamond (PCD coatings ranging from few microns to several hundred microns thickness have been grown by 915 MHz microwave plasma reactor with 9000 W power. The coatings were deposited on 100 mm diameter silicon (Si substrate from few hours to several days of continuous runs. PCD coatings were made freestanding by wet chemical etching technique. The deposited PCDs were evaluated by X-ray diffraction (XRD, scanning electron microscopy (SEM, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS for physical characterization and compared with authors’ earlier work. Refractive index of 2.41 was obtained at 633 nm wavelength and a maximum of 6.6 W·cm-1K-1 value for thermal conductivity could be achieved with the grown coatings. The values are well above the existing non-diamond heat spreading substrates, which makes the grown PCDs as candidates for heat spreaders in different technological applications. High refractive index along with translucent nature of the white freestanding PCDs, make them potential candidate for optical windows.

  8. Diagnosis of gas phase near the substrate surface in diamond film deposition by high-power DC arc plasma jet CVD

    Institute of Scientific and Technical Information of China (English)

    Zuyuan Zhou; Guangchao Chen; Bin Li; Weizhong Tang; Fanxiu Lv

    2007-01-01

    Optical emission spectroscopy (OES) was used to study the gas phase composition near the substrate surface during diamond deposition by high-power DC arc plasma jet chemical vapor deposition (CVD). C2 radical was determined as the main carbon radical in this plasma atmosphere. The deposition parameters, such as substrate temperature, anode-substrate distance, methane concentration, and gas flow rate, were inspected to find out the influence on the gas phase. A strong dependence of the concentrations and distribution of radicals on substrate temperature was confirmed by the design of experiments (DOE). An explanation for this dependence could be that radicals near the substrate surface may have additional ionization or dissociation and also have recombination,or are consumed on the substrate surface where chemical reactions occur.

  9. Electro-spark deposition technology

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, R.N. [Pacific Northwest National Lab., Richland, WA (United States)

    1997-12-01

    Electro-Spark Deposition (ESD) is a micro-welding process that uses short duration, high-current electrical pulses to deposit or alloy a consumable electrode material onto a metallic substrate. The ESD process was developed to produce coatings for use in severe environments where most other coatings fail. Because of the exceptional damage resistance of these coatings, and the versatility of the process to apply a wide variety of alloys, intermetallics, and cermets to metal surfaces, the ESD process has been designated critical to the life and economy of the advanced fossil energy systems as the higher temperatures and corrosive environments exceed the limits of known structural materials to accommodate the service conditions. Developments include producing iron aluminide-based coatings with triple the corrosion resistance of the best previous Fe{sub 3}Al coatings, coatings with refractory metal diffusion barriers and multi layer coatings for achieving functionally gradient properties between the substrate and the surface. A new development is the demonstration of advanced aluminide-based ESD coatings for erosion and wear applications. One of the most significant breakthroughs to occur in the last dozen years is the discovery of a process regime that yields an order of magnitude increase in deposition rates and achievable coating thicknesses. Achieving this regime has required the development of advanced ESD electronic capabilities. Development is now focused on further improvements in deposition rates, system reliability when operating at process extremes, and economic competitiveness.

  10. Synthesis of few-layer graphene on a Ni substrate by using DC plasma enhanced chemical vapor deposition (PE-CVD)

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jeong Hyuk; Castro, Edward Joseph; Hwang, Yong Gyoo; Lee, Choong Hun [Wonkwang University, Iksan (Korea, Republic of)

    2011-01-15

    In this work, few-layer graphene (FLG) was successfully grown on polycrystalline Ni a large scale by using DC plasma enhanced chemical vapor deposition (DC PE-CVD), which may serve as an alternative route in large-scale graphene synthesis. The synthesis time had an effect on the quality of the graphene produced. The applied DC voltage, on the other hand, influenced the minimization of the defect densities in the graphene grown. We also present a method of producing a free-standing polymethyl methacrylate (PMMA)/graphene membrane on a FeCl{sub 3(aq)} solution, which could then be transferred to the desired substrate.

  11. An assessment of radiotherapy dosimeters based on CVD grown diamond

    CERN Document Server

    Ramkumar, S; Conway, J; Whitehead, A J; Sussman, R S; Hill, G; Walker, S

    2001-01-01

    Diamond is potentially a very suitable material for use as a dosimeter for radiotherapy. Its radiation hardness, the near tissue equivalence and chemical inertness are some of the characteristics of diamond, which make it well suited for its application as a dosimeter. Recent advances in the synthesis of diamond by chemical vapour deposition (CVD) technology have resulted in the improvement in the quality of material and increased its suitability for radiotherapy applications. We report in this paper, the response of prototype dosimeters based on two different types (CVD1 and CVD2) of CVD diamond to X-rays. The diamond devices were assessed for sensitivity, dependence of response on dose and dose rate, and compared with a Scanditronix silicon photon diode and a PTW natural diamond dosimeter. The diamond devices of CVD1 type showed an initial increase in response with dose, which saturates after approx 6 Gy. The diamond devices of CVD2 type had a response at low fields (1162.8 V/cm), the CVD2-type devices show...

  12. AFM Morphology Study of Si1-Y GeY:H Films Deposited by LF PE CVD from Silane-Germane with Different

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, L; Kosarev, A

    2005-03-28

    The morphology of Si{sub 1-Y} Ge{sub Y}:H films in the range of Y=0.23 to 0.9 has been studied by AFM. The films were deposited by Low Frequency (LF) PE CVD at substrate temperature T{sub s}=300 C and discharge frequency f=110 kHz from silane+germane mixture with and without, Ar and H{sub 2} dilution. The films were deposited on silicon and glass substrates. AFM images were taken and analyzed for 2 x 2 mm{sup 2} area. All the images demonstrated ''grain'' like structure, which was characterized by the height distribution function F(H) average roughness , standard height deviation Rq, lateral correlation length L{sub c} area distribution function F(s), mean grain area , diameter distribution function F(d), and mean grain diameter . The roughness of the films monotonically increases with Y for all dilutions, but more significantly in the films deposited without dilution. L{sub c} continuously grows with Y in the films deposited without dilution, while more complex behavior L{sub c}(Y) is observed in the films deposited with H- or Ar dilution. The sharpness of F(H) characterized by curtosis {gamma} depends on dilution and the sharpest F(H) are for the films deposited with Ar ({gamma}=5.30,Y=0.23) and without dilution ({gamma}=4.3, Y=0.45). Isothermal annealing caused increase of , L{sub c} in the films deposited with H- and Ar dilutions, while in the films prepared without dilution the behavior was more complex, depending on the substrates. Significant narrowing of the height distribution was observed in the films deposited with H dilution or without dilution.

  13. Deposition of low stress, high transmittance SiC as an x-ray mask membrane using ECR plasma CVD

    CERN Document Server

    Lee, S Y; Lim, S T; Ahn, J H

    1998-01-01

    SiC for x-ray mask membrane is deposited by Electron Cyclotron Resonance plasma Chemical Vapor Deposition from SiH sub 4 /CH sub 4 Ar mixtures. Stoichiometric SiC is deposited at SiH sub 4 /CH sub 4 ratio of 0.4, deposition temperature of 600.deg.C and microwave power of 500 W with +- 5% thickness uniformity, As-deposited film has compressive residual stress, very smooth surface (31 A rms) and high optical transmittance of 90% at 633 nm wavelength. The microstructure of this film consists of the nanocrystalline particle (100 A approx 200A) embedded in amorphous matrix. Residual stress can be turned to tensile stress via Rapid Thermal Annealing in N sub 2 atmosphere, while suppressing structural change during annealing, As a result, smooth (37 A rms) SiC film with moderate tensile stress and high optical transmittance (85% at 633 nm wavelength) is obtained.

  14. CVD Diamond Sensors In Detectors For High Energy Physics

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00334150; Trischuk, William

    At the end of the next decade an upgrade of the Large Hadron Collider (LHC) to High Luminosity LHC (HL-LHC) is planned which requires the development of new radiation tolerant sensor technology. Diamond is an interesting material for use as a particle detector in high radiation environments. The large band gap ($5.47\\,\\text{eV}$) and the large displacement energy suggest that diamond is a radiation tolerant detector material. In this Thesis the capability of Chemical Vapor Deposition (CVD) diamond as such a sensor technology is investigated. The radiation damage constant for $800\\,\\text{MeV}$ protons is measured using single crystalline CVD (scCVD) and polycrystalline CVD (pCVD) diamonds irradiated to particle fluences up to $12 \\times 10^{15}\\,\\text{p/cm}^2$. In addition the signal response of a pCVD diamond detector after an irradiation to $12 \\times 10^{15}\\,\\text{p/cm}^2$ is investigated to determine if such a detector can be operated efficiently in the expected HL-LHC environment. By using electrodes em...

  15. Simple Chemical Vapor Deposition Experiment

    Science.gov (United States)

    Pedersen, Henrik

    2014-01-01

    Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

  16. Initiated Chemical Vapor Deposition (iCVD) of Highly Cross-Linked Polymer Films for Advanced Lithium-Ion Battery Separators.

    Science.gov (United States)

    Yoo, Youngmin; Kim, Byung Gon; Pak, Kwanyong; Han, Sung Jae; Song, Heon-Sik; Choi, Jang Wook; Im, Sung Gap

    2015-08-26

    We report an initiated chemical vapor deposition (iCVD) process to coat polyethylene (PE) separators in Li-ion batteries with a highly cross-linked, mechanically strong polymer, namely, polyhexavinyldisiloxane (pHVDS). The highly cross-linked but ultrathin pHVDS films can only be obtained by a vapor-phase process, because the pHVDS is insoluble in most solvents and thus infeasible with conventional solution-based methods. Moreover, even after the pHVDS coating, the initial porous structure of the separator is well preserved owing to the conformal vapor-phase deposition. The coating thickness is delicately controlled by deposition time to the level that the pore size decreases to below 7% compared to the original dimension. The pHVDS-coated PE shows substantially improved thermal stability and electrolyte wettability. After incubation at 140 °C for 30 min, the pHVDS-coated PE causes only a 12% areal shrinkage (versus 90% of the pristine separator). The superior wettability results in increased electrolyte uptake and ionic conductivity, leading to significantly improved rate performance. The current approach is applicable to a wide range of porous polymeric separators that suffer from thermal shrinkage and poor electrolyte wetting.

  17. Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

    Science.gov (United States)

    Mitchell, Sharanda L.

    1996-01-01

    Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

  18. On the development of single and multijunction solar cells with hot-wire CVD deposited active layers

    NARCIS (Netherlands)

    Li, H. B. T.; Franken, R.H.; Stolk, R.L.; Schuttauf, J.A.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

    2008-01-01

    We present an overview of the scientific challenges and achievements during the development of thin film silicon based single and multijunction solar cells with hot-wire chemical vapor deposition (HWCVD) of the active silicon layers. The highlights discussed include the development of Ag/ZnO coating

  19. Interlayer utilization (including metal borides) for subsequent deposition of NSD films via microwave plasma CVD on 316 and 440C stainless steels

    Science.gov (United States)

    Ballinger, Jared

    . Surface boriding was implemented using the novel method of microwave plasma CVD with a mixture of hydrogen and diborane gases. On 440C bearings, dual phase boride layers of Fe2B and FeB were formed which supported adhered nanostructured diamond films. Continuity of the films was not seamless with limited regions remaining uncoated potentially corresponding to delamination of the film as evidenced by the presence of tubular structures presumably composed of sp2 bonded carbon. Surface boriding of 316 stainless steel discs was conducted at various powers and pressures to achieve temperatures ranging from 550-800 °C. The substrate boriding temperature was found to substantially influence the resultant interlayer by altering the metal boride(s) present. The lowest temperatures produced an interlayer where CrB was the single detected phase, higher temperatures yielded the presence of only Fe2B, and a combination of the two phases resulted from an intermediate boriding temperature. Compared with the more common, commercialized boriding methods, this a profound result given the problems posed by the FeB phase in addition to other advantages offered by CVD processes and microwave generated plasmas in general. Indentation testing of the boride layers revealed excellent adhesion strength for all borided interlayers, and above all, no evidence of cracking was observed for a sole Fe2B phase. As with boriding of 440C bearings, subsequent diamond deposition was achieved on these interlayers with substantially improved adhesion strength relative to diamond coated TiN interlayers. Both XRD and Raman spectroscopy confirmed a nanostructured diamond film with interfacial chromium carbides responsible for enhanced adhesion strength. Interlayers consisting solely of Fe2B have displayed an ability to support fully continuous nanostructured diamond films, yet additional study is required for consistent reproduction. This is in good agreement with initial work on pack borided high alloy steels

  20. Microcrystalline silicon from very high frequency plasma deposition and hot-wire CVD for ``micromorph`` tandem solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Brummack, H.; Brueggemann, R.; Wanka, H.N.; Hierzenberger, A.; Schubert, M.B. [Univ. Stuttgart (Germany). Inst. fuer Physikalische Elektronik

    1997-12-31

    The authors have grown microcrystalline silicon from a glow discharge at very high frequencies of 55 MHz and 170 MHz with high hydrogen dilution, and also, at more than 10 times higher growth rates, similar films by hot-wire chemical vapor deposition. Both kinds of materials have extensively been characterized and compared in terms of structural, optical and electronic properties, which greatly improve by deposition in a multi- instead of a single-chamber system. Incorporation of these different materials into pin solar cells results in open circuit voltages of about 400 mV as long as the doped layers are microcrystalline and rise to more than 870 mV if amorphous p- and n-layers are used. Quantum efficiencies and fill factors are still poor but leave room for further improvement, as clearly demonstrated by a remarkable reverse bias quantum efficiency gain.

  1. Optical spectroscopic analyses of CVD plasmas used in the deposition of transparent and conductive ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Martin, A.; Espinos, J.P.; Yubero, F.; Barranco, A.; Gonzalez-Elipe, A.R. [Instituto de Ciencias de Materiales de Sevilla, CSIC-Universidad de Sevilla (Spain); Cotrino, J. [Universidad de Sevilla, Facultad de Fisica, Dept. de Fisica Atomica, Molecular y Nuclear, Sevilla (Spain)

    2001-07-01

    Transparent conducting ZnO:A1 thin films have been prepared by remote plasma enhanced chemical vapor deposition. Emission line profiles were recorded as a function of different plasma gas composition (oxygen and hydrogen mixtures) and different rates of precursors (Zn(C{sub 2}H{sub 5}){sub 2} and A1(CH{sub 3}){sub 3}) in the downstream zone of the plasma reactor. Optical emission spectroscopy were used to characterize the oxygen/hydrogen plasma as a function of hydrogen flow rate. The variation of plasma hydrogen content has an important influence in the resistivity of the films. (authors)

  2. Thermally Induced Nano-Structural and Optical Changes of nc-Si:H Deposited by Hot-Wire CVD

    Directory of Open Access Journals (Sweden)

    Muller TFG

    2009-01-01

    Full Text Available Abstract We report on the thermally induced changes of the nano-structural and optical properties of hydrogenated nanocrystalline silicon in the temperature range 200–700 °C. The as-deposited sample has a high crystalline volume fraction of 53% with an average crystallite size of ~3.9 nm, where 66% of the total hydrogen is bonded as ≡Si–H monohydrides on the nano-crystallite surface. A growth in the native crystallite size and crystalline volume fraction occurs at annealing temperatures ≥400 °C, where hydrogen is initially removed from the crystallite grain boundaries followed by its removal from the amorphous network. The nucleation of smaller nano-crystallites at higher temperatures accounts for the enhanced porous structure and the increase in the optical band gap and average gap.

  3. Thermally Induced Nano-Structural and Optical Changes of nc-Si:H Deposited by Hot-Wire CVD.

    Science.gov (United States)

    Arendse, C J; Malgas, G F; Muller, T F G; Knoesen, D; Oliphant, C J; Motaung, D E; Halindintwali, S; Mwakikunga, B W

    2009-01-21

    We report on the thermally induced changes of the nano-structural and optical properties of hydrogenated nanocrystalline silicon in the temperature range 200-700 degrees C. The as-deposited sample has a high crystalline volume fraction of 53% with an average crystallite size of ~3.9 nm, where 66% of the total hydrogen is bonded as identical withSi-H monohydrides on the nano-crystallite surface. A growth in the native crystallite size and crystalline volume fraction occurs at annealing temperatures >/=400 degrees C, where hydrogen is initially removed from the crystallite grain boundaries followed by its removal from the amorphous network. The nucleation of smaller nano-crystallites at higher temperatures accounts for the enhanced porous structure and the increase in the optical band gap and average gap.

  4. Molecular fouling resistance of zwitterionic and amphiphilic initiated chemically vapor-deposited (iCVD) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, R; Goktekin, E; Wang, MH; Gleason, KK

    2014-08-08

    Biofouling is a universal problem in various applications ranging from water purification to implantable biomedical devices. Recent advances in surface modification have created a rich library of antifouling surface chemistries, many of which can be categorized into one of the two groups: hydrophilic surfaces or amphiphilic surfaces. We report the straightforward preparation of antifouling thin film coatings in both categories via initiated chemical vapor deposition. A molecular force spectroscopy-based method is demonstrated as a rapid and quantitative assessment tool for comparing the differences in antifouling characteristics. The fouling propensity of single molecules, as opposed to bulk protein solution or bacterial culture, is assessed. This method allows for the interrogation of molecular interaction without the complication resulted from protein conformational change or micro-organism group interactions. The molecular interaction follows the same trend as bacterial adhesion results obtained previously, demonstrating that molecular force probe is a valid method for the quantification and mechanistic examination of fouling. In addition, the molecular force spectroscopy-based method is able to distinguish differences in antifouling capability that is not resolvable by traditional static protein adsorption tests. To lend further insight into the intrinsic fouling resistance of zwitterionic and amphiphilic surface chemistries, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, advancing and receding water contact angles, and atomic force microscopy are used to elucidate the film properties that are relevant to their antifouling capabilities.

  5. Mo-C Multilayered CVD Coatings

    Directory of Open Access Journals (Sweden)

    A. Sagalovych

    2013-12-01

    Full Text Available Production processes of multi-layered Mo-C coatings by the method of chemical vapor deposition (CVD with the use of organometallic compounds were developed. Coatings are applied on technical purpose steel DIN 1.2379 (H12F1 and DIN 1.7709 (25H2MF (ÉI10 heat-treated ball with the high class of surface roughness (> 10. The average deposition rate was 50 μm / h. The optimal conditions of deposition coatings for different technological schemas were defined. Metallographic investigations of the obtained coatings were carried out. Tribological studies of the friction and wear characteristics of sliding friction in conditions of boundary lubrication of Ï-S multilayered CVD coatings shows, that coatings have low friction coefficients (0075-0095 at loads up to 2.0 kN, showed high resistance to wear and are effective in increasing the stability of the pair for precision friction pairs of hydraulical units.

  6. Designing polymer surfaces via vapor deposition

    Directory of Open Access Journals (Sweden)

    Ayse Asatekin

    2010-05-01

    Full Text Available Chemical Vapor Deposition (CVD methods significantly augment the capabilities of traditional surface modification techniques for designing polymeric surfaces. In CVD polymerization, the monomer(s are delivered to the surface through the vapor phase and then undergo simultaneous polymerization and thin film formation. By eliminating the need to dissolve macromolecules, CVD enables insoluble polymers to be coated and prevents solvent damage to the substrate. Since de-wetting and surface tension effects are absent, CVD coatings conform to the geometry of the underlying substrate. Hence, CVD polymers can be readily applied to virtually any substrate: organic, inorganic, rigid, flexible, planar, three-dimensional, dense, or porous. CVD methods integrate readily with other vacuum processes used to fabricate patterned surfaces and devices. CVD film growth proceeds from the substrate up, allowing for interfacial engineering, real-time monitoring, thickness control, and the synthesis of films with graded composition. This article focuses on two CVD polymerization methods that closely translate solution chemistry to vapor deposition; initiated CVD and oxidative CVD. The basic concepts underlying these methods and the resultant advantages over other thin film coating techniques are described, along with selected applications where CVD polymers are an enabling technology.

  7. Heat treatment of CVD and PVD coated steels. Influence on coating build-up, dimensional changes, residual stress distribution and technological properties. Final report; Waermebehandlung CVD- und PVD-beschichteter Staehle. Einfluss auf Schichtaufbau, Massaenderungen, Eigenspannungsverteilung und technologische Eigenschaften. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Kessler, O.

    1993-12-31

    Coating in accordance with the CVD process offers a number of advantages as compared to other processes. CVD facilities are of a relatively simple construction, as coating is possible almost at ambient pressure. The disadvantage of the CVD process is the high coating temperature involved. Previously, this fact has led to a low volume of air-hardening steels being coated. Due to high coating temperatures, coated steel substrates require subsequent heat treatment, in order to obtain an operational material condition. Steels with different hardenabilities (Ck 45, 42 CrMo 4, 100 Cr 6, X 155 CrVmo 12.1) and different coatings (HT-CVD TiN, MT-CVD TiCN, PVD TiN) were retreated with heat under inert gas and vacuum. The following coating and substrate properties were investigated before and after retreatment with heat: chemical and phase composition, structure, hardness, residual stresses, and adhesion of the coating. It was possible to obtain the desired structures and hardnesses in the substrates. The coatings remained macroscopically unchanged during vacuum heat treatment, while the coating color changed during inert gas heat treatment. (orig./MM) [Deutsch] Die Beschichtung nach dem CVD-Verfahren weist gegenueber anderen Verfahren eine Reihe von Vorteilen auf. CVD-Anlagen sind relativ einfach aufgebaut, da nahezu bei Umgebungsdruck beschichtet werden kann. Der Nachteil des CVD-Verfahrens ist die hohe Beschichtungstemperatur. Diese Tatsache hat bisher dazu gefuehrt, dass nicht lufthaertende Staehle nur in geringem Umfang beschichtet wurden. Aufgrund der hohen Beschichtungstemperaturen beduerfen beschichtete Stahlsubstrate einer nachtraeglichen Waermebehandlung zur Erzielung eines einsatzgerechten Werkstoffzustands. Staehle mit unterschiedlichen Haertbarkeiten (Ck 45, 42 CrMo 4, 100 Cr 6, X 155 CrVMo 12.1) und verschiedenen Schichten (HT-CVD TiN, MT-CVDTiCN, PVD TiN) wurden unter Schutzgas und Vakuum nachwaermebehandelt. Folgende Schicht- und Substrateigenschaften wurden

  8. Ultrafast deposition of silicon nitride and semiconductor silicon thin films by Hot Wire Chemical Vapor Deposition

    NARCIS (Netherlands)

    Schropp, R.E.I.; van der Werf, C.H.M.; Verlaan, V.; Rath, J.K.; Li, H. B. T.

    2009-01-01

    The technology of Hot Wire Chemical Vapor Deposition (HWCVD) or Catalytic Chemical Vapor Deposition (Cat-CVD) has made great progress during the last couple of years. This review discusses examples of significant progress. Specifically, silicon nitride deposition by HWCVD (HW-SiNx) is highlighted, a

  9. Polymer Matrix Composites using Fused Deposition Modeling Technology Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Fused deposition modeling (FDM) is an additive manufacturing technology that allows fabrication of complex three-dimensional geometries layer-by-layer. The goal of...

  10. The technology of Plasma Spray Physical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    M. Góral

    2012-12-01

    Full Text Available Purpose: The deposition of thermal barrier coatings is currently the most effective means of protecting the surface of aircraft engine turbine blades from the impact of aggressive environment of combustion gases. The new technologies of TBC depositions are required.Design/methodology/approach: The essential properties of the PS-PVD process have been outlined, as well as recent literature references. In addition, the influence of a set process condition on the properties of the deposited coatings has been described.Findings: The new plasma-spraying PS-PVD method is a promising technology for the deposition of modern thermal barrier coatings on aircraft engine turbine blades.Research limitations/implications: The constant progress of engine operating temperatures and increasing pollution restrictions determine the intensive development of heat-resistant coatings, which is directed to new deposition technologies and coating materials.Practical implications: The article presents a new technology of thermal barrier coating deposition - LPPS Thin Film and Plasma Spray - Physical Vapour Deposition.Originality/value: The completely new technologies was described in article.

  11. Panel 1 - comparative evaluation of deposition technologies

    Energy Technology Data Exchange (ETDEWEB)

    Fenske, G.R.; Stodolsky, F. [Argonne National Lab., IL (United States); Benson, D.K.; Pitts, R.J. [National Renewable Energy Lab., Golden, CO (United States); Bhat, D.G. [GTE Valenite Corp., Troy, MI (United States); Yulin Chen [Allison Gas Turbine Division, GM, Indianapolis, IN (United States); Gat, R.; Sunkara, M.K. [Case Western Reserve Univ., Cleveland, OH (United States); Kelly, M. [Stanford Univ., CA (United States); Lawler, J.E. [Univ. of Wisconsin, Madison (United States); Nagle, D.C. [Martin Marietta Labs., Baltimore, MD (United States); Outka, D. [Sandia National Laboratories, Livermore, CA (United States); Revankar, G.S. [Deere & Co., Moline, IL (United States); Subramaniam, V.V. [Ohio State Univ., Columbus (United States); Wilbur, P.J. [Colorado State Univ., Fort Collins (United States); Mingshow Wong [Northwestern Univ., Evanston, IL (United States); Woolam, W.E. [Southwest Research Inst., Arlington, VA (United States)

    1993-01-01

    This working group attempted to evaluate/compare the different types of deposition techniques currently under investigation for depositing diamond and diamond-like carbon films. A table lists the broad types of techniques that were considered for depositing diamond and diamond-like carbon films. After some discussion, it was agreed that any evaluation of the various techniques would be dependent on the end application. Thus the next action was to list the different areas where diamond and DLC films could find applications in transportation. These application areas are listed in a table. The table intentionally does not go into great detail on applications because that subject is dealt with specifically by Panel No. 4 - Applications To Transportation. The next action concentrated on identifying critical issues or limitations that need to be considered in evaluating the different processes. An attempt was then made to rank different broad categories of deposition techniques currently available or under development based on the four application areas and the limitations. These rankings/evaluations are given for diamond and DLC techniques. Finally, the working group tried to identify critical development and research issues that need to be incorporated into developing a long-term program that focuses on diamond/DLC coatings for transportation needs. 5 tabs.

  12. Concept for lightweight spaced-based deposition technology

    Energy Technology Data Exchange (ETDEWEB)

    Fulton, Michael; Anders, Andre

    2006-02-28

    In this contribution we will describe a technology path to very high quality coatings fabricated in the vacuum of space. To accomplish the ambitious goals set out in NASA's Lunar-Mars proposal, advanced thin-film deposition technology will be required. The ability to deposit thin-film coatings in the vacuum of lunar-space could be extremely valuable for executing this new space mission. Developing lightweight space-based deposition technology (goal:<300 g, including power supply) will enable the future fabrication and repair of flexible large-area space antennae and fixed telescope mirrors for lunar-station observatories. Filtered Cathodic Arc (FCA) is a proven terrestrial energetic thin-film deposition technology that does not need any processing gas but is well suited for ultra-high vacuum operation. Recently, miniaturized cathodic arcs have already been developed and considered for space propulsion. It is proposed to combine miniaturized pulsed FCA technology and robotics to create a robust, enabling space-based deposition system for the fabrication, improvement, and repair of thin films, especially of silver and aluminum, on telescope mirrors and eventually on large area flexible substrates. Using miniature power supplies with inductive storage, the typical low-voltage supply systems used in space are adequate. It is shown that high-value, small area coatings are within the reach of existing technology, while medium and large area coatings are challenging in terms of lightweight technology and economics.

  13. Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

    NARCIS (Netherlands)

    Yang, Mengdi; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Gravesteijn, Dirk J; Wolters, Robertus A.M.; Schmitz, Jurriaan

    In this work, the authors developed hot-wire assisted atomic layer deposition (HWALD) to deposit tungsten (W) with a tungsten filament heated up to 1700–2000 C. Atomic hydrogen (at-H) was generated by dissociation of molecular hydrogen (H2), which reacted with WF6 at the substrate to deposit W. The

  14. CVD diamond resistor as heater and temperature sensor

    Energy Technology Data Exchange (ETDEWEB)

    Yang, G.S.; Aslam, M. [Michigan State Univ., East Lansing, MI (United States)

    1995-12-31

    Heat generation and temperature control, essential for most heater applications, require different components in a conventional system. We achieve the heat generation and temperature measurement simultaneously by using a single diamond resistor. Chemical vapor deposited (CVD) p-type diamond resistors with different dimensions were fabricated on polycrystalline diamond or oxidized Si substrates using diamond film technology compatible with integrated circuit (IC) processing. The temperature response of the resistors was characterized in the temperature range of 25 - 500{degrees}C. Power densities in access of 600 watt/in{sup 2} were achieved.

  15. Heat transfer model of an iCVD reactor

    NARCIS (Netherlands)

    Bakker, R.; Verlaan, V.; Verkerk, A.D.; van der Werf, C.H.M.; van Dijk, L.; Rudolph, H.; Rath, J.K.; Schropp, R.E.I.

    2009-01-01

    Contrary to conventional HWCVD, the power consumption in the iCVD process is dominated by heat conduction rather than radiation. This is due to the fact that while the typical wire temperature for HWCVD is about 1750–2200 °C, for iCVD the temperature is only 250–500 °C. Typical deposition pressures

  16. Deposition of silicon nitride thin films by hot-wire CVD at 100 {sup o}C and 250 {sup o}C

    Energy Technology Data Exchange (ETDEWEB)

    Alpuim, P., E-mail: palpuim@fisica.uminho.p [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Goncalves, L.M. [Departamento de Electronica Industrial, Universidade do Minho, 4800-058 Guimaraes (Portugal); Marins, E.S. [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Viseu, T.M.R. [Departamento de Fisica, Universidade do Minho, 4710-057 Braga (Portugal); Ferdov, S. [Departamento de Fisica, Universidade do Minho, 4800-058 Guimaraes (Portugal); Bouree, J.E. [Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, 91128 Palaiseau (France)

    2009-04-30

    Silicon nitride thin films for use as passivation layers in solar cells and organic electronics or as gate dielectrics in thin-film transistors were deposited by the Hot-wire chemical vapor deposition technique at a high deposition rate (1-3 A/s) and at low substrate temperature. Films were deposited using NH{sub 3}/SiH{sub 4} flow rate ratios between 1 and 70 and substrate temperatures of 100 {sup o}C and 250 {sup o}C. For NH{sub 3}/SiH{sub 4} ratios between 40 and 70, highly transparent (T {approx} 90%), dense films (2.56-2.74 g/cm{sup 3}) with good dielectric properties and refractive index between 1.93 and 2.08 were deposited on glass substrates. Etch rates in BHF of 2.7 A/s and < 0.5 A/s were obtained for films deposited at 100 {sup o}C and 250 {sup o}C, respectively. Films deposited at both substrate temperatures showed electrical conductivity {approx} 10{sup -14} {Omega}{sup -1} cm{sup -1} and breakdown fields > 10 MV cm{sup -1}.

  17. Atmospheric pressure plasma-initiated chemical vapor deposition (AP-PiCVD) of poly(diethylallylphosphate) coating: a char-forming protective coating for cellulosic textile.

    Science.gov (United States)

    Hilt, Florian; Boscher, Nicolas D; Duday, David; Desbenoit, Nicolas; Levalois-Grützmacher, Joëlle; Choquet, Patrick

    2014-01-01

    An innovative atmospheric pressure chemical vapor deposition method toward the deposition of polymeric layers has been developed. This latter involves the use of a nanopulsed plasma discharge to initiate the free-radical polymerization of an allyl monomer containing phosphorus (diethylallylphosphate, DEAP) at atmospheric pressure. The polymeric structure of the film is evidence by mass spectrometry. The method, highly suitable for the treatment of natural biopolymer substrate, has been carried out on cotton textile to perform the deposition of an efficient and conformal protective coating.

  18. Hot Wire CVD for thin film triple junction cells and for ultrafast deposition of the SiN passivation layer on polycrystalline Si solar cells

    NARCIS (Netherlands)

    Schropp, R.E.I.; Franken, R.H.; Goldbach, H.D.; Houweling, Z.S.; Li, H. B. T.; Rath, J.K.; Schuttauf, J.A.; Stolk, R.L.; Verlaan, V.; van der Werf, C.H.M.

    2008-01-01

    We present recent progress on hot-wire deposited thin film solar cells and applications of silicon nitride. The cell efficiency reached for μc-Si:H n–i–p solar cells on textured Ag/ZnO presently is 8.5%, in line with the state-of-the-art level for μc-Si:H n–i–p's for any method of deposition. Such c

  19. X-Ray structural and gas phase studies of silver(i) perfluorinated carboxylate complexes with 2,2'-bipyridyl as potential precursors for chemical vapour deposition (CVD).

    Science.gov (United States)

    Szłyk, Edward; Szczesny, Robert; Wojtczak, Andrzej

    2010-02-21

    [Ag(CF(3)COO)(bpy)] (), [Ag(2)(C(2)F(5)COO)(2)(bpy)] () and [Ag(2)(C(3)F(7)COO)(2)(bpy)] () were prepared and characterized by MS-EI, (1)H, (13)C NMR, variable-temperature IR (VT-IR) spectroscopy (solid sample and evolved volatile species) and thermal analysis. Single-crystal X-ray diffraction data revealed the polymeric structure for [Ag(2)(C(2)F(5)COO)(2)(bpy)] and [Ag(6)(C(3)F(7)COO)(6)(bpy)(4)], with bridging bpy ligand, whereas for [Ag(CF(3)COO)(bpy)] the dimeric system with monodentately linked carboxylate was noted. Mass spectra analysis of () over 30-300 degrees C indicates the presence of binuclear ions [(RCOO)Ag(2)](+) as a main volatile particles, which can be transported in CVD process. VT-IR studies of gases evolved during the thermal decomposition process, demonstrate the presence of fluorocarbon species and CO(2) as the most abundant molecules. Thermal analysis of () revealed a multi-stage decomposition mechanism resulting in Ag(0) formation below 290 degrees C. Compounds were tested for silver metal spray pyrolysis and obtained layers were characterized by scanning electron microscopy (SEM-EDX) and XRD.

  20. Enhanced cold wall CVD reactor growth of horizontally aligned single-walled carbon nanotubes

    Science.gov (United States)

    Mu, Wei; Kwak, Eun-Hye; Chen, Bingan; Huang, Shirong; Edwards, Michael; Fu, Yifeng; Jeppson, Kjell; Teo, Kenneth; Jeong, Goo-Hwan; Liu, Johan

    2016-05-01

    HASynthesis of horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) by chemical vapor deposition (CVD) directly on quartz seems very promising for the fabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesis of HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, cooling and growth periods, but also prevents contamination of the chamber. However, since most synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this well-established process to a cold-wall chamber becomes extremely crucial. Here, in order to transfer the CVD growth technology from a hot-wall to a cold-wall chamber, a systematic investigation has been conducted to determine the influence of process parameters on the HA-SWCNT's growth. For two reasons, the cold-wall CVD chamber was upgraded with a top heater to complement the bottom substrate heater; the first reason to maintain a more uniform temperature profile during HA-SWCNTs growth, and the second reason to preheat the precursor gas flow before projecting it onto the catalyst. Our results show that the addition of a top heater had a significant effect on the synthesis. Characterization of the CNTs shows that the average density of HA-SWCNTs is around 1 - 2 tubes/ μm with high growth quality as shown by Raman analysis. [Figure not available: see fulltext.

  1. Metallic Tungsten Nanostructures and Highly Nanostructured Thin Films by Deposition of Tungsten Oxide and Subsequent Reduction in a Single Hot-Wire CVD Process

    NARCIS (Netherlands)

    Harks, P.P.R.M.L.; Houweling, Z.S.; de Jong, M.M.; Kuang, Y; Geus, J.W.; Schropp, R.E.I.

    2012-01-01

    The synthesis of metallic tungsten nanostructures and highly nanostructured thin films is presented. Crystalline tungsten oxide nanostructures are deposited on glassy carbon substrates kept at 700 100 8C by oxidizing resistively heated tungsten filaments in an air flow under subatmospheric pressures

  2. Influence of hydrogen dilution on structural, electrical and optical properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films prepared by plasma enhanced chemical vapour deposition (PE-CVD)

    Energy Technology Data Exchange (ETDEWEB)

    Funde, A.M.; Bakr, Nabeel Ali; Kamble, D.K. [School of Energy Studies, University of Pune, Pune 411 007 (India); Hawaldar, R.R.; Amalnerkar, D.P. [Center for Materials for Electronics Technology (C-MET), Panchawati, Pune 411 008 (India); Jadkar, S.R. [Department of Physics, University of Pune, Ganeshkhind Road, Pune 411 007 (India)

    2008-10-15

    Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited from pure silane (SiH{sub 4}) and hydrogen (H{sub 2}) gas mixture by conventional plasma enhanced chemical vapour deposition (PE-CVD) method at low temperature (200 C) using high rf power. The structural, optical and electrical properties of these films are carefully and systematically investigated as a function of hydrogen dilution of silane (R). Characterization of these films with low angle X-ray diffraction and Raman spectroscopy revealed that the crystallite size in the films tends to decrease and at same time the volume fraction of crystallites increases with increase in R. The Fourier transform infrared (FTIR) spectroscopic analysis showed at low values of R, the hydrogen is predominantly incorporated in the nc-Si:H films in the mono-hydrogen (Si-H) bonding configuration. However, with increasing R the hydrogen bonding in nc-Si:H films shifts from mono-hydrogen (Si-H) to di-hydrogen (Si-H{sub 2}) and (Si-H{sub 2}){sub n} complexes. The hydrogen content in the nc-Si:H films decreases with increase in R and was found less than 10 at% over the entire studied range of R. On the other hand, the Tauc's optical band gap remains as high as 2 eV or much higher. The quantum size effect may responsible for higher band gap in nc-Si:H films. A correlation between electrical and structural properties has been found. For optimized deposition conditions, nc-Si:H films with crystallite size {proportional_to}7.67 nm having good degree of crystallinity ({proportional_to}84%) and high band gap (2.25 eV) were obtained with a low hydrogen content (6.5 at%). However, for these optimized conditions, the deposition rate was quite small (1.6 Aa/s). (author)

  3. TECHNOLOGY OF ARTIFICIAL DEPOSIT PRESERVATION AT THE KURSK MAGNETIC ANOMALY

    Directory of Open Access Journals (Sweden)

    Maria A. Pashkevich

    2016-09-01

    Full Text Available An evaluation of existing insulation and remediation technologies for solid mineral waste storages is carried out. Results of field observations at one of the largest tailings in Russia are given. A quality of atmospheric air, and surface and ground water are estimated in the impact areas of a magnetic separation waste storage at an iron ore deposit of the Kursk Magnetic Anomaly. An effective method of landfill’s surface insulation using polymeric materials is offered. The technological insulation process by means of a self-propelled screening machine is described. The suggested method will allow preserving an artificial deposit until the time of its rational mining, stopping water and wind erosion from its surface. Environmental conditions in its location area will be improved and pollution of atmosphere, soil, and natural water will be reduced.

  4. On the origin of self-organization of SiO2 nanodots deposited by CVD enhanced by atmospheric pressure remote microplasma

    Science.gov (United States)

    Arnoult, G.; Belmonte, T.; Kosior, F.; Dossot, M.; Henrion, G.

    2011-05-01

    The origin of organization of nanostructured silica coatings deposited on stainless steel substrates by remote microplasma at atmospheric pressure is investigated. We show by resorting to thermal camera measurements coupled with modelling that deposition, limited to a few seconds in time, occurs at low temperature (~below 420 K) although the gas temperature may reach 1400 K. Raman analyses of deposited films with thicknesses below 1 µm show the presence of oxidized silicon bonded to the metallic surface. The origin of nanodots is explained as follows. Close to the microplasma nozzle, the concentration of oxidizing species and/or the temperature being high enough, a silica thin film is obtained, leading to ceramic-metallic oxide interface that leads to a Volmer-Weber growth mode and to the synthesis of 3D structures over long treatment times. Far from the nozzle, the reactivity decreasing, thin films get a plasma-polymer like behaviour which leads to a Franck-Van der Merwe growth mode and films with a higher density. Other nanostructures, made of hexagonal cells, are observed but remain unexplained.

  5. On the origin of self-organization of SiO{sub 2} nanodots deposited by CVD enhanced by atmospheric pressure remote microplasma

    Energy Technology Data Exchange (ETDEWEB)

    Arnoult, G; Belmonte, T; Kosior, F; Henrion, G [Institut Jean Lamour, Department of Physics and Chemistry of Solids and Surfaces, UMR 7198 CNRS, Nancy-Universite, Parc de Saurupt, CS 14234, F-54042 Nancy Cedex (France); Dossot, M, E-mail: thierry.belmonte@mines.inpl-nancy.fr [Laboratoire de Chimie Physique et Microbiologie pour l' Environnement, UMR 7564 CNRS - Universite Henri Poincare, Nancy-Universite, 405, rue de Vandoeuvre, F-54600 Villers-les-Nancy (France)

    2011-05-04

    The origin of organization of nanostructured silica coatings deposited on stainless steel substrates by remote microplasma at atmospheric pressure is investigated. We show by resorting to thermal camera measurements coupled with modelling that deposition, limited to a few seconds in time, occurs at low temperature ({approx}below 420 K) although the gas temperature may reach 1400 K. Raman analyses of deposited films with thicknesses below 1 {mu}m show the presence of oxidized silicon bonded to the metallic surface. The origin of nanodots is explained as follows. Close to the microplasma nozzle, the concentration of oxidizing species and/or the temperature being high enough, a silica thin film is obtained, leading to ceramic-metallic oxide interface that leads to a Volmer-Weber growth mode and to the synthesis of 3D structures over long treatment times. Far from the nozzle, the reactivity decreasing, thin films get a plasma-polymer like behaviour which leads to a Franck-Van der Merwe growth mode and films with a higher density. Other nanostructures, made of hexagonal cells, are observed but remain unexplained.

  6. Electrochemically assisted deposition of hydroxyapatite on Ti6Al4V substrates covered by CVD diamond films — Coating characterization and first cell biological results

    Energy Technology Data Exchange (ETDEWEB)

    Strąkowska, Paulina [Gdańsk University of Technology, Mechanical Engineering Faculty (Poland); Gdańsk University of Technology, Faculty of Electronics, Telecommunications, and Informatics (Poland); Beutner, René [Max Bergmann Center, Technische Universität Dresden (Germany); Gnyba, Marcin [Gdańsk University of Technology, Faculty of Electronics, Telecommunications, and Informatics (Poland); Zielinski, Andrzej [Gdańsk University of Technology, Mechanical Engineering Faculty (Poland); Scharnweber, Dieter, E-mail: Dieter.Scharnweber@tu-dresden.de [Max Bergmann Center, Technische Universität Dresden (Germany)

    2016-02-01

    Although titanium and its alloys are widely used as implant material for orthopedic and dental applications they show only limited corrosion stability and osseointegration in different cases. The aim of the presented research was to develop and characterize a novel surface modification system from a thin diamond base layer and a hydroxyapatite (HAp) top coating deposited on the alloy Ti6Al4V widely used for implants in contact with bone. This coating system is expected to improve both the long-term corrosion behavior and the biocompatibility and bioactivity of respective surfaces. The diamond base films were obtained by Microwave Plasma Assisted Chemical Vapor Deposition (MW-PACVD); the HAp coatings were formed in aqueous solutions by electrochemically assisted deposition (ECAD) at varying polarization parameters. Scanning electron microscopy (SEM), Raman microscopy, and electrical conductivity measurements were applied to characterize the generated surface states; the calcium phosphate coatings were additionally chemically analyzed for their composition. The biological properties of the coating system were assessed using hMSC cells analyzing for cell adhesion, proliferation, and osteogenic differentiation. Varying MW-PACVD process conditions resulted in composite coatings containing microcrystalline diamond (MCD/Ti-C), nanocrystalline diamond (NCD), and boron-doped nanocrystalline diamond (B-NCD) with the NCD coatings being dense and homogeneous and the B-NCD coatings showing increased electrical conductivity. The ECAD process resulted in calcium phosphate coatings from stoichiometric and non-stoichiometric HAp. The deposition of HAp on the B-NCD films run at lower cathodic potentials and resulted both in the highest coating mass and the most homogenous appearance. Initial cell biological investigations showed an improved cell adhesion in the order B-NCD > HAp/B-NCD > uncoated substrate. Cell proliferation was improved for both investigated coatings whereas ALP

  7. Research on Asynchronous Multi-channel Electro-acupuncture Needles Based on CVD Technology%基于CVD技术的异步多通路电针灸针的研究

    Institute of Scientific and Technical Information of China (English)

    邱可可; 刘景全; 芮岳峰; 杨春生; 王宇娟; 李克勇

    2011-01-01

    The traditional Chinese acupuncture is an effective method for the treatment of diseases. With the combination of new technology of the modern acupuncture and the main and collateral channels, the acupoint, the original traditional needle has been developed to the electric needle. This paper presents an asynchronous multi-channel electrical acupuncture needle. Based on the traditional needle, we can use the micro-processing technology to fabricate several stimulating electrodes on one single needle. The micro-processing technology includes the sputtering metal layer and the chemical vapor deposition of insulation layer parylene, and so on. The parylene as an insulating material between the different layer metal, has the advantage of pinhole-free coating, less liquid and gas permeability, good biocompatibility, transparency and flexibility, and good mechanical strength. By connecting to the electro-acupuncture device, we can realize a number of stimulating current paths asynchronously on one needle.%针灸治疗是中医治疗疾病的一种有效方法,随着现代针灸的新科技与经络穴位的结合,传统的毫针逐渐发展到了脉冲电针、电热针等.该文提出一种异步多通路刺激的电针灸针.基于传统的毫针,通过微加工工艺在一根毫针针体上加工出若干个刺激电极,微加工工艺包括溅射金属层及化学气相沉积(CVD)绝缘层聚对二甲苯.聚对二甲苯作为电极间的绝缘材料,具有无针孔涂覆、更低的液气渗透率、良好的生物相容性、透明性和柔韧性、以及较好的机械强度.通过连接电针灸仪,在一根针上即可实现异步多条电流通路的刺激.

  8. Amorphous boron coatings produced with vacuum arc deposition technology

    CERN Document Server

    Klepper, C C; Yadlowsky, E J; Carlson, E P; Keitz, M D; Williams, J M; Zuhr, R A; Poker, D B

    2002-01-01

    In principle, boron (B) as a material has many excellent surface properties, including corrosion resistance, very high hardness, refractory properties, and a strong tendency to bond with most substrates. The potential technological benefits of the material have not been realized, because it is difficult to deposit it as coatings. B is difficult to evaporate, does not sputter well, and cannot be thermally sprayed. In this article, first successful deposition results from a robust system, based on the vacuum (cathodic) arc technology, are reported. Adherent coatings have been produced on 1100 Al, CP-Ti, Ti-6Al-4V, 316 SS, hard chrome plate, and 52 100 steel. Composition and thickness analyses have been performed by Rutherford backscattering spectroscopy. Hardness (H) and modules (E) have been evaluated by nanoindentation. The coatings are very pure and have properties characteristic of B suboxides. A microhardness of up to 27 GPa has been measured on a 400-nm-thick film deposited on 52 100 steel, with a corresp...

  9. Developing the Beijing CVD

    Institute of Scientific and Technical Information of China (English)

    LU JINGXIAN

    2006-01-01

    @@ Slowly but surely, the high-end villa property in Beijing is gaining new momentum. Limited amounts of new properties, rising prices and increasing demand will be the trend in the villa market in 2006, real estate experts predict. Among them, the exclusive Central Villa District(CVD), a top-tier villa area along the Wenyu River in northeast Beijing, has emerged as a hot spot of the market.

  10. Chemical vapor deposition of silicon carbide for large area mirrors

    Science.gov (United States)

    Gentilman, R. L.; Maguire, E. A.

    1982-05-01

    CVD-SiC has been identified as the leading mirror material for high energy synchrotron radiation because of its high K/alpha ratio and its ability to be super-polished to less than or equal to 10 A rms roughness. Technology already exists for depositing SiC over large areas (approximately 70 cm x 20 cm). The CVD process, substrate selection, and mirror design considerations are discussed.

  11. Correlation between optical emission spectra and the process parameters of a 915 MHz microwave plasma CVD reactor used for depositing polycrystalline diamond coatings

    Indian Academy of Sciences (India)

    Awadesh Kumar Mallik; Sandip Bysakh; Someswar Dutta; Debabrata Basu

    2014-08-01

    In this paper, the hydrogen and hydrogen-methane mixed plasma have been generated inside a 33 cm diameter quartz bell jar with a low power (9 KW) and lower frequency 915 MHz microwave plasma chemical vapor deposition system. The reactor is being used for growing polycrystalline diamond (PCD) over large area (100 mm). The generated plasma is diagnosed by in situ optical emission spectroscopy method with wave length ranging from 200 to 900 nm. The effects of microwave power, chamber pressure and gas concentration on plasma characteristics have been studied in this work. Within the optical range, Balmer H, H, C2swan band and CH lines have been detected at the wavelengths of 655.95, 485.7, 515.82 and 430.17 nm, respectively. It has been observed that for hydrogen plasma, the amount of transition from hydrogen atom inner shell 3 to 2 (H) is almost constant with increasing microwave (MW) power (from 2000 to 2800 W) and pressure (from 15 to 30 Torr) initially, after that it increases with further increase of MW power and pressure, whereas, the transition from 4 to 2 (H) is slowly increased with increasing MW power and pressure. For hydrogen-methane plasma, intensities of C2 swan band, i.e., the transitions from D$^3\\Pi_\\text{g}$ to A$^3\\Pi_{\\mu}$ energy levels, are also increased with the increasing microwave power and reactor pressure. It has been observed that the radicals present in the plasma are affected by variation of different reactor parameters like pressure, MW power, CH4 concentration, etc.

  12. Plasma Assisted Chemical Vapour DepositionTechnological Design Of Functional Coatings

    Directory of Open Access Journals (Sweden)

    Januś M.

    2015-06-01

    Full Text Available Plasma Assisted Chemical Vapour Deposition (PA CVD method allows to deposit of homogeneous, well-adhesive coatings at lower temperature on different substrates. Plasmochemical treatment significantly impacts on physicochemical parameters of modified surfaces. In this study we present the overview of the possibilities of plasma processes for the deposition of diamond-like carbon coatings doped Si and/or N atoms on the Ti Grade2, aluminum-zinc alloy and polyetherketone substrate. Depending on the type of modified substrate had improved the corrosion properties including biocompatibility of titanium surface, increase of surface hardness with deposition of good adhesion and fine-grained coatings (in the case of Al-Zn alloy and improving of the wear resistance (in the case of PEEK substrate.

  13. Multicomponent Thin Films Deposited by PVD ARC and LARC Technology

    Directory of Open Access Journals (Sweden)

    Dagmar JAKUBÉCZYOVÁ

    2014-04-01

    Full Text Available The paper is focused on a comparison of advanced layers deposited by two coating technologies – cathodic arc deposition (ARC and lateral rotating cathodes (LARC. For characterization standard analyses were selected: the determination of the layer wear resistance by Calotest method, specification of the depth concentration profiles of constituting elements from the coating surface down to the substrate, and measurement of the nanohardness at dynamic loading. The thickness of the CrTiN layer reached 1380 nm – 1740 nm and that of the multi/nanolayers AlXN3 was 2630 nm – 3160 nm. The coating nanohardness on the surface attained 39 GPa for AlXN3 (X = Cr, 33 GPa for CrTiN and 12.5 GPa for the substrate. Only at coating prepared by LARC-Technology it is possible to create the multilayers of nanometric dimensions. AlXN3 coating was formed by 48 layers with dimensions of 58 nm – 70 nm. These nanolayers lead to the increase of system toughness as they prevent the crack propagation. Their application on the tools and components promises to increase their durability under service conditions.DOI: http://dx.doi.org/10.5755/j01.ms.20.1.3716

  14. Development of mining technology and equipment for seafloor massive sulfide deposits

    Science.gov (United States)

    Liu, Shaojun; Hu, Jianhua; Zhang, Ruiqiang; Dai, Yu; Yang, Hengling

    2016-09-01

    Seafloor massive sulfide(SMS) deposits which consist of Au, Ag, Cu, and other metal elements, have been a target of commercial mining in recent decades. The demand for established and reliable commercial mining system for SMS deposits is increasing within the marine mining industry. The current status and progress of mining technology and equipment for SMS deposits are introduced. First, the mining technology and other recent developments of SMS deposits are comprehensively explained and analyzed. The seafloor production tools manufactured by Nautilus Minerals and similar mining tools from Japan for SMS deposits are compared and discussed in turn. Second, SMS deposit mining technology research being conducted in China is described, and a new SMS deposits mining tool is designed according to the environmental requirement. Finally, some new trends of mining technology of SMS deposits are summarized and analyzed. All of these conclusions and results have reference value and guiding significance for the research of SMS deposit mining in China.

  15. A CVD Diamond Detector for (n,a) Cross-Section Measurements

    CERN Document Server

    Weiss, Christina; Griesmayer, Erich; Guerrero, Carlos

    A novel detector based on the chemical vapor deposition (CVD) diamond technology has been developed in the framework of this PhD, for the experimental determination of (n,a) cross-sections at the neutron time-of-flight facility n_TOF at CERN. The 59Ni(n,a)56Fe cross-section, which is relevant for astrophysical questions as well as for risk-assessment studies in nuclear technology, has been measured in order to validate the applicability of the detector for such experiments. The thesis is divided in four parts. In the introductory part the motivation for measuring (n,a) cross-sections, the experimental challenges for such measurements and the reasons for choosing the CVD diamond technology for the detector are given. This is followed by the presentation of the n_TOF facility, an introduction to neutron-induced nuclear reactions and a brief summary of the interaction of particles with matter. The CVD diamond technology and the relevant matters related to electronics are given as well in this first part of the t...

  16. CVD polymers fabrication of organic surfaces and devices

    CERN Document Server

    Gleason, Karen K

    2015-01-01

    The method of CVD (chemical vapor deposition) is a versatile technique to fabricate high-quality thin films and structured surfaces in the nanometer regime from the vapor phase. Already widely used for the deposition of inorganic materials in the semiconductor industry, CVD has become the method of choice in many applications to process polymers as well. This highly scalable technique allows for synthesizing high-purity, defect-free films and for systematically tuning their chemical, mechanical and physical properties. In addition, vapor phase processing is critical for the deposition of insol

  17. Analysis of Residual Thermal Stress in CVD-W Coating as Plasma Facing Material

    Institute of Scientific and Technical Information of China (English)

    朱大焕; 王坤; 王先平; 陈俊凌; 方前锋

    2012-01-01

    Chemical vapor deposition-tungsten (CVD-W) coating covering the surface of the plasma facing component (PFC) is an effective method to implement the tungsten material as plasma facing material (PFM) in fusion devices. Residual thermal stress in CVD-W coating due to thermal mismatch between coating and substrate was successfully simulated by using a finite element method (ANSYS 10.0 code). The deposition parametric effects, i.e., coating thickness and deposition temperature, and interlayer were investigated to get a description of the residual thermal stress in the CVD-W coating-substrate system. And the influence of the substrate materials on the generation of residual thermal stress in the CVD-W coating was analyzed with respect to the CVD-W coating application as PFM. This analysis is beneficial for the preparation and application of CVD-W coating.

  18. Analysis of Residual Thermal Stress in CVD-W Coating as Plasma Facing Material

    Science.gov (United States)

    Zhu, Dahuan; Wang, Kun; Wang, Xianping; Chen, Junling; Fang, Qianfeng

    2012-07-01

    Chemical vapor deposition-tungsten (CVD-W) coating covering the surface of the plasma facing component (PFC) is an effective method to implement the tungsten material as plasma facing material (PFM) in fusion devices. Residual thermal stress in CVD-W coating due to thermal mismatch between coating and substrate was successfully simulated by using a finite element method (ANSYS 10.0 code). The deposition parametric effects, i.e., coating thickness and deposition temperature, and interlayer were investigated to get a description of the residual thermal stress in the CVD-W coating-substrate system. And the influence of the substrate materials on the generation of residual thermal stress in the CVD-W coating was analyzed with respect to the CVD-W coating application as PFM. This analysis is beneficial for the preparation and application of CVD-W coating.

  19. Modeling for CVD of Solid Oxide Electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Starr, T.L.

    2002-09-18

    Because of its low thermal conductivity, high thermal expansion and high oxygen ion conductivity yttria-stabilized zirconia (YSZ) is the material of choice for high temperature electrolyte applications. Current coating fabrication methods have their drawbacks, however. Air plasma spray (APS) is a relatively low-cost process and is suitable for large and relatively complex shapes. it is difficult to produce uniform, relatively thin coatings with this process, however, and the coatings do not exhibit the columnar microstructure that is needed for reliable, long-term performance. The electron-beam physical vapor deposition (EB-PVD) process does produce the desirable microstructure, however, the capital cost of these systems is very high and the line-of-sight nature of the process limits coating uniformity and the ability to coat large and complex shapes. The chemical vapor deposition (CVD) process also produces the desirable columnar microstructure and--under proper conditions--can produce uniform coatings over complex shapes. CVD has been used for many materials but is relatively undeveloped for oxides, in general, and for zirconia, in particular. The overall goal of this project--a joint effort of the University of Louisville and Oak Ridge National Laboratory (ORNL)--is to develop the YSZ CVD process for high temperature electrolyte applications. This report describes the modeling effort at the University of Louisville, which supports the experimental work at ORNL. Early work on CVD of zirconia and yttria used metal chlorides, which react with water vapor to form solid oxide. Because of this rapid gas-phase reaction the water generally is formed in-situ using the reverse water-gas-shift reaction or a microwave plasma. Even with these arrangements gas-phase nucleation and powder formation are problems when using these precursors. Recent efforts on CVD of zirconia and YSZ have focused on use of metal-organic precursors (MOCVD). These are more stable in the gas

  20. A Review of the Properties and CVD Synthesis of Coiled Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Dóra Fejes

    2010-04-01

    Full Text Available The CVD route for carbon nanotube production has become a popular method to make large amounts of multiwall carbon nanotubes. The structure, morphology and size of carbon materials depend critically on the catalyst preparation and deposition conditions. According to current knowledge, CVD method is the only process which can produce carbon nanocoils. These nanocoils are perfect candidates for nanotechnology applications. One might indeed hope that these coils would have the extraordinary stiffness displayed by straight nanotubes. Based on theoretical studies, regular coiled nanotubes exhibit exceptional mechanical, electrical, and magnetic properties due to the combination of their peculiar helical morphology and the fascinating properties of nanotubes. In spite of its technological interest, relatively low attention has been paid to this special field. In this paper we attempt to summarize results obtained until now.

  1. Technological characteristics of glauconite rocks in Bakchar deposit (Western Siberia

    Directory of Open Access Journals (Sweden)

    Rudmin M.A.

    2016-01-01

    Full Text Available Glauconite-containing rocks found within the boundaries of the Bakchar deposit includethe following: glauconite ores (glauconitolite, glauconite sandstone, hydrogoethite-chlorite, iron ores with glauconite. Glauconite content in glauconite ores is 50…70 %, in glauconite sandstone – 20…40 %, in hydrogoethite-chlorite ores- 10…20 %. This paper describes the technological characteristics of glauconite rocks. The authors proposed the optimal technological scheme of producing glauconite concentrate. It has been defined that the most highly-qualified product with commercial components 90…100 % is recovered from glauconite ores. It has been evaluated that Bakchar glauconite is applicable as a favorable mineral fertilizer based on the concentrate produced from enriched hydrogoethite-chlorite ores. Experimentally, it has been proved that this concentrate has a positive effect on the growth of oats (Avéna satíva. This is a direct indicator of its practical applicability. Obtained results indicate the fact that the extraction and application of Bakchar glauconite could be widely used in agriculture.

  2. CVD diamond - fundamental phenomena

    Energy Technology Data Exchange (ETDEWEB)

    Yarbrough, W.A. [Pennsylvania State Univ., University Park (United States)

    1993-01-01

    This compilation of figures and diagrams addresses the basic physical processes involved in the chemical vapor deposition of diamond. Different methods of deposition are illustrated. For each method, observations are made of the prominent advantages and disadvantages of the technique. Chemical mechanisms of nucleation are introduced.

  3. Direct Digital Manufacturing of Integrated Naval Systems Using Ultrasonic Consolidation, Support Material Deposition and Direct Write Technologies

    Science.gov (United States)

    2012-02-17

    using fused deposition modeling technology • VTT Technical Research Center, Finland o focusing on direct write technologies and applications of...South Korea: focusing on multiple material process planning, and metal processing using fused deposition modeling technology • VTT Technical

  4. Recent Advances in Atmospheric Vapor-Phase Deposition of Transparent and Conductive Zinc Oxide

    NARCIS (Netherlands)

    Illiberi, A.; Poodt, P.; Roozeboom, F.

    2014-01-01

    The industrial need for high-throughput and low-cost ZnO deposition processes has triggered the development of atmospheric vapor-phase deposition techniques which can be easily applied to continuous, in-line manufacturing. While atmospheric CVD is a mature technology, new processes for the growth of

  5. Diagnostic Techniques Used to Study Chemical-Vapor-Deposited Diamond Films

    Science.gov (United States)

    Miyoshi, Kazuhisa

    2000-01-01

    The advantages and utility of chemical-vapor-deposited (CVD) diamond as an industrial ceramic can only be realized if the price and quality are right. Until recently, this technology was of interest only to the academic and basic research community. However, interest has grown because of advances made by leading CVD diamond suppliers: 1) Reduction of the cost of CVD polycrystalline diamond deposition below $5/carat ($8/sq cm); 2) Installation of production capacity; 3) Epitaxial growth of CVD single-crystal diamond. Thus, CVD diamond applications and business are an industrial reality. At present, CVD diamond is produced in the form of coatings or wafers. CVD diamond film technology offers a broader technological potential than do natural and high-pressure synthetic diamonds because size, geometry, and eventually cost will not be as limiting. Now that they are cost effective, diamond coatings - with their extreme properties - can be used in a variety of applications. Diamond coatings can improve many of the surface properties of engineering substrate materials, including erosion, corrosion, and wear resistance. Examples of actual and potential applications, from microelectromechanical systems to the wear parts of diamond coatings and related superhard coatings are described. For example, diamond coatings can be used as a chemical and mechanical barrier for the space shuttles check valves, particularly on the guide pins and seat assemblies.

  6. Luminescent thin films by the chemical aerosol deposition technology (CADT)

    NARCIS (Netherlands)

    Martin, F.J.; Martin, F.J.; Albers, H.; Lambeck, Paul; Popma, T.J.A.; van de Velde, G.M.H.

    1992-01-01

    Zinc sulphide thin films have been deposited with CART using zinc chlorideand zinc acetylacetonate as Zn compounds and thiourea and 1,1,3,3-tetramethylthiourea as S compounds soluted in methanol, ethanol, isopropanol and cellosolve. After optimalization of the deposition process homogeneous layers

  7. Development of atmospheric pressure CVD processes for highquality transparent conductive oxides

    NARCIS (Netherlands)

    Graaf, A. de; Deelen, J. van; Poodt, P.W.G.; Mol, A.M.B. van; Spee, C.I.M.A.; Grob, F.; Kuypers, A.

    2010-01-01

    For the past decade TNO has been involved in the research and development of atmospheric pressure CVD (APCVD) and plasma enhanced CVD (PECVD) processes for deposition of transparent conductive oxides (TCO), such as tin oxide and zinc oxide. It is shown that by combining precursor development, fundam

  8. Surface analysis of CVD diamond exposed to fusion plasma

    NARCIS (Netherlands)

    Porro, S.; De Temmerman, G.; MacLaren, D. A.; Lisgo, S.; Rudakov, D. L.; Westerhout, J.; Wiora, M.; John, P.; Villalpando, I.; Wilson, J. I. B.

    2010-01-01

    Microcrystalline undoped and heavily boron-doped polycrystalline diamond layers have been deposited on various substrates by hot filament CVD and exposed to hydrogen plasma in a linear plasma reactor (Pilot-PSI, The Netherlands) that simulates the high flux and high density plasma conditions of toka

  9. Atmospheric pressure CVD of SNO2 and ZNO:AL

    NARCIS (Netherlands)

    Deelen, J. van; Kniknie, B.J.; Steijvers, H.L.A.H.; Mannie, G.; Thune, P.; Illiberi, A.

    2012-01-01

    Atmospheric pressure CVD (APCVD) is a highly cost effective method of depositing transparent conductive oxides (TCOs). In this work, insights in alcohol addition in the widely applied SnO2 process are discussed, including high resolution TEM images. Furthermore, the APCVD process of ZnO:Al was demon

  10. High collection efficiency CVD diamond alpha detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bergonzo, P.; Foulon, F.; Marshall, R.D.; Jany, C.; Brambilla, A. [CEA/Saclay, Gif-sur-Yvette (France); McKeag, R.D.; Jackman, R.B. [University College London (United Kingdom). Electronic and Electrical Engineering Dept.

    1998-06-01

    Advances in Chemical Vapor Deposited (CVD) diamond have enabled the routine use of this material for sensor device fabrication, allowing exploitation of its unique combination of physical properties (low temperature susceptibility (> 500 C), high resistance to radiation damage (> 100 Mrad) and to corrosive media). A consequence of CVD diamond growth on silicon is the formation of polycrystalline films which has a profound influence on the physical and electronic properties with respect to those measured on monocrystalline diamond. The authors report the optimization of physical and geometrical device parameters for radiation detection in the counting mode. Sandwich and co-planar electrode geometries are tested and their performances evaluated with regard to the nature of the field profile and drift distances inherent in such devices. The carrier drift length before trapping was measured under alpha particles and values as high as 40% of the overall film thickness are reported. Further, by optimizing the device geometry, they show that a gain in collection efficiency, defined as the induced charge divided by the deposited charge within the material, can be achieved even though lower bias values are used.

  11. Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer-Free Device Fabrication.

    Science.gov (United States)

    Wang, Huaping; Yu, Gui

    2016-07-01

    Graphene is the most broadly discussed and studied two-dimensional material because of its preeminent physical, mechanical, optical, and thermal properties. Until now, metal-catalyzed chemical vapor deposition (CVD) has been widely employed for the scalable production of high-quality graphene. However, in order to incorporate the graphene into electronic devices, a transfer process from metal substrates to targeted substrates is inevitable. This process usually results in contamination, wrinkling, and breakage of graphene samples - undesirable in graphene-based technology and not compatible with industrial production. Therefore, direct graphene growth on desired semiconductor and dielectric substrates is considered as an effective alternative. Over the past years, there have been intensive investigations to realize direct graphene growth using CVD methods without the catalytic role of metals. Owing to the low catalytic activity of non-metal substrates for carbon precursor decomposition and graphene growth, several strategies have been designed to facilitate and engineer graphene fabrication on semiconductors and insulators. Here, those developed strategies for direct CVD graphene growth on semiconductors and dielectrics for transfer-free fabrication of electronic devices are reviewed. By employing these methods, various graphene-related structures can be directly prepared on desired substrates and exhibit excellent performance, providing versatile routes for varied graphene-based materials fabrication.

  12. Hot-Wire Chemical Vapor Deposition of Few-Layer Graphene on Copper Substrates

    Science.gov (United States)

    Soler, Víctor-Manuel Freire; Badia-Canal, Jordi; Roca, Carles Corbella; Miralles, Esther Pascual; Serra, Enric Bertran; Bella, José-Luís Andújar

    2013-01-01

    Chemical vapor deposition (CVD) of graphene on copper is an efficient technology for producing high-quality graphene for large areas. The objective of this work is to deposit graphene/few-layer graphene (FLG) using different types of copper substrate by a new hot-wire CVD process. We carried out the processes at temperatures below 1000 °C with acetylene (C2H2) as a precursor gas. After a general characterization of the samples, the results mostly indicate the formation of FLG on copper samples by this method. Nevertheless, the presence of pure, crystalline, and sufficiently flat surfaces is needed for depositing high-quality graphene layers.

  13. Engineered CVD Diamond Coatings for Machining and Tribological Applications

    Science.gov (United States)

    Dumpala, Ravikumar; Chandran, Maneesh; Ramachandra Rao, M. S.

    2015-07-01

    Diamond is an allotropes of carbon and is unique because of its extreme hardness (~100 GPa), low friction coefficient (fracture toughness can be tuned by controlling the grain size of the coatings from a few microns to a few nanometers. In this review, characteristics and performance of the CVD diamond coatings deposited on cemented tungsten carbide (WC-Co) substrates were discussed with an emphasis on WC-Co grade selection, substrate pretreatment, nanocrystallinity and microcrystallinity of the coating, mechanical and tribological characteristics, coating architecture, and interfacial adhesion integrity. Engineered coating substrate architecture is essential for CVD diamond coatings to perform well under harsh and highly abrasive machining and tribological conditions.

  14. Laser-Directed CVD 3D Printing of Refractory Metal Rocket Propulsion Hardware Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this project, Ultramet will develop a three-dimensional (3D) laser-directed chemical vapor deposition (CVD) additive manufacturing system to build free-form...

  15. Technology basis and perspectives on focused electron beam induced deposition and focused ion beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rius, Gemma, E-mail: rius.gemma@nitech.ac.jp

    2014-12-15

    The main characteristics of focused electron beam induced deposition (FEBID) and focused ion beam induced deposition (FIBID) are presented. FEBID and FIBID are two nanopatterning techniques that allow the fabrication of submicron patterns with nanometer resolution on selected locations of any kind of substrate, even on highly structured supports. The process consists of mask less serial deposition and can be applied to a wide variety of materials, depending strictly on the precursor material source used. The basic mechanism of FEBID and FIBID is the adsorption of volatile precursor molecules onto the sample surface and decomposition of the molecules induced by the energetic electron and ion focused beams. The essential similarities of the two techniques are presented and especial emphasis is dedicated to highlighting their main differences, such as aspects related to resolution, deposition rate, deposits purity, substrate integrity, etc. In both cases, the factors interplay and complex mechanisms are still understood in a qualitative basis, so much work can still be done in terms of modeling and simulating the processes involved in FEBID and FIBID. Current work on FEBID and FIBID is presented through examples of achievements, interesting results and novel approaches.

  16. Present limitations of CVD diamond detectors for IMRT applications

    Energy Technology Data Exchange (ETDEWEB)

    De Angelis, C. [Dipartimento di Tecnologie e Salute, Istituto Superiore di Sanita and INFN, Viale regina Elena 299, 00161 Rome (Italy)], E-mail: cinzia.deangelis@iss.it; Casati, M. [Dipartimento di Fisiopatologia dell' Universita and INFN, Florence (Italy); Bruzzi, M. [Dipartimento di Energetica dell' Universita and INFN, Florence (Italy); Onori, S. [Dipartimento di Tecnologie e Salute, Istituto Superiore di Sanita and INFN, Viale regina Elena 299, 00161 Rome (Italy); Bucciolini, M. [Dipartimento di Fisiopatologia dell' Universita and INFN, Florence (Italy)

    2007-12-11

    The aim of the work was to test the suitability of chemical vapor deposited (CVD) diamond detectors for dosimetry in IMRT fields. We used in-house CVD detectors prepared with state-of-the-art polycrystalline diamond films (Element Six Ltd., UK). The parameters considered were time stability, dynamic response, dose-rate dependence and energy dependence. Output factors and TPR were measured in conventional photon fields and dose measurements were performed in IMRT fields using the step-and-shoot technique. Results prove that CVD diamond detectors are suitable for dosimetry in conventional treatments, but they still do not fit the IMRT dosimetry requirements, mainly because of their slow dynamic response. In particular, the slow dynamics affects linearity at low Monitor Units and renders it impossible to follow the sharp transients of IMRT fields. Time stability and dose-rate dependence as well must be improved to reduce their influence on dose assessment.

  17. Synthesis of CVD-graphene on rapidly heated copper foils.

    Science.gov (United States)

    Kim, Sang-Min; Kim, Jae-Hyun; Kim, Kwang-Seop; Hwangbo, Yun; Yoon, Jong-Hyuk; Lee, Eun-Kyu; Ryu, Jaechul; Lee, Hak-Joo; Cho, Seungmin; Lee, Seung-Mo

    2014-05-07

    Most chemical vapor deposition (CVD) systems used for graphene growth mainly employ convection and radiation heat transfer between the heating source and the metal catalyst in order to reach the activation temperature of the reaction, which in general leads to a long synthesis time and poor energy efficiency. Here, we report a highly time- and energy-efficient CVD setup, in which the metal catalyst (Cu) is designed to be physically contacted with a heating source to give quick heat transfer by conduction. The induced conduction heating enabled the usual effects of the pretreatment and annealing of Cu (i.e., annihilation of surface defects, impurities and contaminants) to be achieved in a significantly shorter time compared to conventional CVD. Notably, the rapid heating was observed to lead to larger grains of Cu with high uniformity as compared to the Cu annealed by conventional CVD, which are believed to be beneficial for the growth of high quality graphene. Through this CVD setup, bundles of high quality (∼252 Ω per square) and large area (over 16 inch) graphenes were able to be readily synthesized in 40 min in a significantly efficient way. When considering ease of scalability, high energy effectiveness and considerable productivity, our method is expected to be welcomed by industrialists.

  18. Application and research progress of fluidized bed-chemical vapor deposition technology%流化床-化学气相沉积技术的应用及研究进展

    Institute of Scientific and Technical Information of China (English)

    刘荣正; 刘马林; 邵友林; 刘兵

    2016-01-01

    Fluidized bed-chemical vapor deposition (FB-CVD) is widely used in industrial production owing to the combined advantages of both fluidized bed and chemical vapor deposition. Providing good heat and mass transfer,it can obtain a pure product with uniform deposition. Based on its basic principle,the applications of FB-CVD in areas of particle coating,preparation of one-dimensional nano-materials, polycrystalline silicon,powder synthesis and powder surface modification are reviewed. The progress of process simulation and reactor structure design of FB-CVD is introduced. From the discussion,the scientific connotation of FB-CVD shows multi-scale features,namely material preparation at microscopic level, particle fluidization at mesoscopic level and reactor structure design at macroscopic level. Future development of FB-CVD technology depends on coupling analysis of these three scales,and research should be focused on the effect of interaction between different scales,such as coupling between homogeneous nucleation material/non-homogeneous nucleation in materials preparation and particle fluidization in the reactor.%流化床-化学气相沉积(FB-CVD)技术是一种多学科交叉的材料制备技术,兼有流化床传热传质性能良好以及化学气相沉积均匀、产物单一等优点,在工业生产中有着广泛的应用,但因其属于交叉学科,散见于各种研究,没有进行专门的进展评述。本文拟对 FB-CVD 的工业应用进行专题综述,分析其发展和研究趋势。首先探讨了 FB-CVD 的基本原理,分别综述了其在颗粒包覆、一维纳米材料、多晶硅制备、颗粒表面改性及粉体制备等方面的应用,介绍了 FB-CVD 的过程模拟及反应器结构优化方面的研究进展。通过以上讨论,梳理了FB-CVD研究的科学内涵。可以看出,该过程具有明显的多尺度特征,即材料制备的微观层次、颗粒流化均匀性的介观层次以及反应器结构

  19. Polymer Layers by Initiated CVD for Thin Film Gas Barrier Encapsulation

    NARCIS (Netherlands)

    Spee, D.A.; Rath, J.K.; Schropp, R.E.I.

    2013-01-01

    In this chapter a thorough description of the initiated chemical vapor deposition (iCVD) process will be given, concentrating on molecular weight and deposition rate of the deposited polymer, which are essential for largescale application in hybrid gas barriers. Practical applications of coatings by

  20. A platform for large-scale graphene electronics--CVD growth of single-layer graphene on CVD-grown hexagonal boron nitride.

    Science.gov (United States)

    Wang, Min; Jang, Sung Kyu; Jang, Won-Jun; Kim, Minwoo; Park, Seong-Yong; Kim, Sang-Woo; Kahng, Se-Jong; Choi, Jae-Young; Ruoff, Rodney S; Song, Young Jae; Lee, Sungjoo

    2013-05-21

    Direct chemical vapor deposition (CVD) growth of single-layer graphene on CVD-grown hexagonal boron nitride (h-BN) film can suggest a large-scale and high-quality graphene/h-BN film hybrid structure with a defect-free interface. This sequentially grown graphene/h-BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h-BN film, and suggests a new promising template for graphene device fabrication.

  1. Improving the technology of deposition using strip electrode

    Directory of Open Access Journals (Sweden)

    Сергій Володимирович Гулаков

    2017-07-01

    Full Text Available The behavior of the arc at the strip electrode tip is studied. It is shown that the arc is moving along the electrode tip due to periodic short-circuits of the arc gap. Thus, a new arc is excited at the point where short circuit occurred after a conductive bridge formed by molten metal is vanished due to a high welding current. This leads to an increase in the probability of defect formation in the deposited layer of workpiece under treatment. To improve deposited layer quality, it is suggested to identify the moments of short-circuits of the electrode to the base metal and to discharge the pre-charged capacitorat these instants, connecting it between the electrode and the product. High discharge current pulse speeds up the destruction of the molten metal bridge between electrode tip and workpiece, thus lowering the time needed for arc re-ignition and improving depostion process stability. A special automated equipment has been developed to implement this process. Capacitor discharge is done using power thyristor with series-connected inductance for limiting discharging current rate of rise and for limiting discharge current peak value such that it is not impairing thyristor reliability. The pre-charging of the capacitor is done by an auxiliary power supply. Several thyristor-capacitor networks can be used in parallel to allow for multiple current pulses mode and to reduce RMS currents in capacitors

  2. Microfabrication of Tungsten, Molybdenum and Tungsten Carbide Rods by Laser-Assisted CVD

    OpenAIRE

    Björklund, Kajsa

    2001-01-01

    Thin films of refractory metals and carbides have been studied extensively over many years because of their wide range of application. The two major techniques used are Chemical Vapour Deposition (CVD) and Physical Vapour Deposition (PVD). These can result in the deposition of two-dimensional blanket or patterned thin films. Laser-assisted Chemical Vapour Deposition (LCVD) can provide a maskless alternative for localised deposition in two and three dimensions. This thesis describes LCVD of mi...

  3. Deposition Technology and Microhardness of Electrochemical Deposited Ni-W Alloy Nanocrystalline

    Institute of Scientific and Technical Information of China (English)

    WUYu-cheng; SHUXia; WANGLi-ping; HUXiao-ye; WANGWen-fang; HUANGXin-min

    2004-01-01

    In this paper, a perpendicular experiment was conducted by using 4 key process parmeters, such as concentration of sodium tungstate, current density, PH value and operaftng temperature, which have obvious influence on the electrodeposition of Ni-W alloy nanocrystalline. By extreme difference analysis, the influence of multi-factors on the deposition rate and microhardness and sultace quality of the nanocrystalline alloy coatings was studied in detail. By further contrastive experiment, the influence of single-factor on the electrodeposition of Ni-W alloy nanocrystalline was also discussod, which will provide basis for the preparation of Ni-W alloy nanocrystalline.

  4. Deposition Technology and Microhardness of Electrochemical Deposited Ni-W Alloy Nanocrystalline

    Institute of Scientific and Technical Information of China (English)

    WU Yu-cheng; SHU Xia; WANG Li-ping; HU Xiao-ye; WANG Wen-fang; HUANG Xin-min

    2004-01-01

    In this paper, a perpendicular experiment was conducted by using 4 key process parameters, such as concentration of sodium tungstate, current density, PH value and operating temperature, which have obvious influence on the electrodeposition of Ni-W alloy nanocrystalline. By extreme difference analysis, the influence of multi-factors on the deposition rate and microhardness and surface quality of the nanocrystalline alloy coatings was studied in detail. By further contrastive experiment, the influence of single-factor on the electrodeposition of Ni-W alloy nanocrystalline was also discussed, which will provide basis for the preparation of Ni-W alloy nanocrystalline.

  5. Bioinspired peptide nanotubes: Deposition technology and physical properties

    Energy Technology Data Exchange (ETDEWEB)

    Shklovsky, J.; Beker, P. [Department of Physical Electronics, School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel); Amdursky, N. [Department of Physical Electronics, School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel); Department of Molecular Microbiology and Biotechnology, George S. Wise Faculty of Life Sciences, Tel Aviv University, 69978 Tel Aviv (Israel); Gazit, E. [Department of Molecular Microbiology and Biotechnology, George S. Wise Faculty of Life Sciences, Tel Aviv University, 69978 Tel Aviv (Israel); Rosenman, G., E-mail: gilr@eng.tau.ac.il [Department of Physical Electronics, the School of Electrical Engineering, Iby and Aladar Fleischman Faculty of Engineering, Tel Aviv University, 69978 Tel Aviv (Israel)

    2010-05-25

    Proteins and peptides have the intrinsic ability to self-assemble into elongated solid nanofibrils, which give rise to amyloid progressive neurodegenerative diseases (Alzheimer's, Parkinson, etc.). It has been found that of the core recognition motif of A{beta} peptide is the diphenylalanine element. The diphenylalanine peptide can self-assemble into well-ordered peptide nanotubes (PNT). In this paper we report on our newly developed process-vapor deposition of PNT and 'bottom-up' nanotechnological techniques of PNT patterning. Study of several physical properties of PNT such as optical and electrochemical are presented. The results may lead to the development of a new generation of PNT-based bioinspired functional nanodevices.

  6. Drastically Enhanced High-Rate Performance of Carbon-Coated LiFePO4 Nanorods Using a Green Chemical Vapor Deposition (CVD) Method for Lithium Ion Battery: A Selective Carbon Coating Process.

    Science.gov (United States)

    Tian, Ruiyuan; Liu, Haiqiang; Jiang, Yi; Chen, Jiankun; Tan, Xinghua; Liu, Guangyao; Zhang, Lina; Gu, Xiaohua; Guo, Yanjun; Wang, Hanfu; Sun, Lianfeng; Chu, Weiguo

    2015-06-03

    Application of LiFePO4 (LFP) to large current power supplies is greatly hindered by its poor electrical conductivity (10(-9) S cm(-1)) and sluggish Li+ transport. Carbon coating is considered to be necessary for improving its interparticle electronic conductivity and thus electrochemical performance. Here, we proposed a novel, green, low cost and controllable CVD approach using solid glucose as carbon source which can be extended to most cathode and anode materials in need of carbon coating. Hydrothermally synthesized LFP nanorods with optimized thickness of carbon coated by this recipe are shown to have superb high-rate performance, high energy, and power densities, as well as long high-rate cycle lifetime. For 200 C (18s) charge and discharge, the discharge capacity and voltage are 89.69 mAh g(-1) and 3.030 V, respectively, and the energy and power densities are 271.80 Wh kg(-1) and 54.36 kW kg(-1), respectively. The capacity retention of 93.0%, and the energy and power density retention of 93.6% after 500 cycles at 100 C were achieved. Compared to the conventional carbon coating through direct mixing with glucose (or other organic substances) followed by annealing (DMGA), the carbon phase coated using this CVD recipe is of higher quality and better uniformity. Undoubtedly, this approach enhances significantly the electrochemical performance of high power LFP and thus broadens greatly the prospect of its applications to large current power supplies such as electric and hybrid electric vehicles.

  7. Catalytic CVD of SWCNTs at Low Temperatures and SWCNT Devices

    Science.gov (United States)

    Seidel, Robert; Liebau, Maik; Unger, Eugen; Graham, Andrew P.; Duesberg, Georg S.; Kreupl, Franz; Hoenlein, Wolfgang; Pompe, Wolfgang

    2004-09-01

    New results on the planar growth of single-walled carbon nanotubes (SWCNTs) by catalytic chemical vapor deposition (CVD) at low temperatures will be reported. Optimizing catalyst, catalyst support, and growth parameters yields SWCNTs at temperatures as low as 600 °C. Growth at such low temperatures largely affects the diameter distribution since coalescence of the catalyst is suppressed. A phenomenological growth model will be suggested for CVD growth at low temperatures. The model takes into account surface diffusion and is an alternative to the bulk diffusion based vapor-liquid-solid (VLS) model. Furthermore, carbon nanotubes field effect transistors based on substrate grown SWCNTs will be presented. In these devices good contact resistances could be achieved by electroless metal deposition or metal evaporation of the contacts.

  8. Identifying potential disaster zones around the Verkhnekamskoye potash deposit (Russia) using advanced information technology (IT)

    Science.gov (United States)

    Royer, J. J.; Filippov, L. O.

    2017-07-01

    This work aims at improving the exploitation of the K, Mg, salts ore of the Verkhnekamskoye deposit using advanced information technology (IT) such as 3D geostatistical modeling techniques together with high performance flotation. It is expected to provide a more profitable exploitation of the actual deposit avoiding the formation of dramatic sinkholes by a better knowledge of the deposit. The GeoChron modelling method for sedimentary formations (Mallet, 2014) was used to improve the knowledge of the Verkhnekamskoye potash deposit, Perm region, Russia. After a short introduction on the modern theory of mathematical modelling applied to mineral resources exploitation and geology, new results are presented on the sedimentary architecture of the ore deposit. They enlighten the structural geology and the fault orientations, a key point for avoiding catastrophic water inflows recharging zone during exploitation. These results are important for avoiding catastrophic sinkholes during exploitation.

  9. Leakage current measurements of a pixelated polycrystalline CVD diamond detector

    OpenAIRE

    Zain, R.M.; Maneuski, D.; O'Shea, V.; Bates, R.; Blue, A.; Cunnigham, L.; Stehl, C.; Berderman, E.; Rahim, R. A.

    2013-01-01

    Diamond has several desirable features when used as a material for radiation detection. With the invention of synthetic growth techniques, it has become feasible to look at developing diamond radiation detectors with reasonable surface areas. Polycrystalline diamond has been grown using a chemical vapour deposition (CVD) technique by the University of Augsburg and detector structures fabricated at the James Watt Nanofabrication Centre (JWNC) in the University of Glasgow in order to produce pi...

  10. THz-conductivity of CVD graphene on different substrates

    OpenAIRE

    Gabriel Cortés, Daniel; Sempere, Bernat; Colominas, Carles; Ferrer Anglada, Núria

    2015-01-01

    Optoelectronic properties of CVD graphene are charac-terized over a wide frequency range: THz, IR, visible and near-UV. We used Raman spectroscopy to characterize the synthesized graphene films. All graphene layers were deposited on various substrates, some ones transparent or flexible, such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), quartz and silicon. Transmission Terahertz time-domain spectroscopy (THz-TDS) method, in the range from 100 GHz to 3 THz, is used to an...

  11. Investigation of the Millimeter-Wave Plasma Assisted CVD Reactor

    Energy Technology Data Exchange (ETDEWEB)

    Vikharev, A; Gorbachev, A; Kozlov, A; Litvak, A; Bykov, Y; Caplan, M

    2005-07-21

    A polycrystalline diamond grown by the chemical vapor deposition (CVD) technique is recognized as a unique material for high power electronic devices owing to unrivaled combination of properties such as ultra-low microwave absorption, high thermal conductivity, high mechanical strength and chemical stability. Microwave vacuum windows for modern high power sources and transmission lines operating at the megawatt power level require high quality diamond disks with a diameter of several centimeters and a thickness of a few millimeters. The microwave plasma-assisted CVD technique exploited today to produce such disks has low deposition rate, which limits the availability of large size diamond disk windows. High-electron-density plasma generated by the millimeter-wave power was suggested for enhanced-growth-rate CVD. In this paper a general description of the 30 GHz gyrotron-based facility is presented. The output radiation of the gyrotron is converted into four wave-beams. Free localized plasma in the shape of a disk with diameter much larger than the wavelength of the radiation is formed in the intersection area of the wave-beams. The results of investigation of the plasma parameters, as well as the first results of diamond film deposition are presented. The prospects for commercially producing vacuum window diamond disks for high power microwave devices at much lower costs and processing times than currently available are outlined.

  12. Cold-walled UHV/CVD batch reactor for the growth of Si1_x/Gex layers

    DEFF Research Database (Denmark)

    Thomsen, Erik Vilain; Christensen, Carsten; Andersen, C.R.;

    1997-01-01

    A novel cold-walled, lamp-heated, ultrahigh vacuum chemical vapor deposition (UHV/CVD) batch system for the growth of SiGe layers is presented. This system combines the batch capability of the standard UHV/CVD furnace with the temperature processing available in rapid thermal processing (Rm) equi...

  13. Simulation and experimental study of CVD process for low temperature nanocrystalline silicon carbide coating

    Energy Technology Data Exchange (ETDEWEB)

    Kaushal, Amit; Prakash, Jyoti, E-mail: jprakash@barc.gov.in; Dasgupta, Kinshuk; Chakravartty, Jayanta K.

    2016-07-15

    Highlights: • Parametric simulation was carried out for specially designed CVD reactor. • Effect of fluid velocity, heat flow and concentration were studied in CVD reactor. • Coating study carried out using low temperature and environmental safe CVD process. • Dense and uniform nanocrystalline SiC film was coated on zircaloy substrate. - Abstract: There is a huge requirement for development of a coating technique in nuclear industry, which is environmentally safe, economical and applicable to large scale components. In this view, simulation of gas-phase behavior in specially designed CVD reactor was carried out using computational tool, COMSOL. There were two important zones in CVD reactor first one is precursor vaporization zone and second one is coating zone. Optimized parameters for coating were derived from the simulation of gas phase dynamics in both zone of CVD reactor. The overall effect of fluid velocity, heat flow and concentration profile showed that Re = 54 is the optimum reaction condition for uniform coating in CVD system. In CVD coating experiments a synthesized halogen free, non-toxic and non-corrosive silicon carbide precursor was used. Uniform coating of SiC was obtained on zircaloy substrate at 900 °C using as synthesized organosilicon precursor. The X-ray diffraction and scanning electron microscopy analysis show that dense nano crystalline SiC film was deposited on zircaloy substrate.

  14. CVD carbon powders modified by ball milling

    Directory of Open Access Journals (Sweden)

    Kazmierczak Tomasz

    2015-09-01

    Full Text Available Carbon powders produced using a plasma assisted chemical vapor deposition (CVD methods are an interesting subject of research. One of the most interesting methods of synthesizing these powders is using radio frequency plasma. This method, originally used in deposition of carbon films containing different sp2/sp3 ratios, also makes possible to produce carbon structures in the form of powder. Results of research related to the mechanical modification of these powders have been presented. The powders were modified using a planetary ball mill with varying parameters, such as milling speed, time, ball/powder mass ratio and additional liquids. Changes in morphology and particle sizes were measured using scanning electron microscopy and dynamic light scattering. Phase composition was analyzed using Raman spectroscopy. The influence of individual parameters on the modification outcome was estimated using statistical method. The research proved that the size of obtained powders is mostly influenced by the milling speed and the amount of balls. Powders tend to form conglomerates sized up to hundreds of micrometers. Additionally, it is possible to obtain nanopowders with the size around 100 nm. Furthermore, application of additional liquid, i.e. water in the process reduces the graphitization of the powder, which takes place during dry milling.

  15. Dosimetric characterization of CVD diamonds irradiated with 62 MeV proton beams

    Energy Technology Data Exchange (ETDEWEB)

    Cirrone, G.A.P. [Laboratori Nazionali del Sud, INFN, Catania (Italy)]. E-mail: cirrone@lns.infn.it; Cuttone, G. [Laboratori Nazionali del Sud, INFN, Catania (Italy); Lo Nigro, S. [Laboratori Nazionali del Sud, INFN, Catania (Italy); Dipartimento di Fisica ed Astronomia, Universita di Catania (Italy); CSFNSM Centro Siciliano di Fisica Nucleare e Struttura della MAteria, Catania (Italy); Mongelli, V. [Laboratori Nazionali del Sud, INFN, Catania (Italy); Scuola di Specializzazione in Fisica Sanitaria, Universita di Catania (Italy); CSFNSM Centro Siciliano di Fisica Nucleare e Struttura della MAteria, Catania (Italy); Raffaele, L. [Laboratori Nazionali del Sud, INFN, Catania (Italy); Sabini, M.G. [Laboratori Nazionali del Sud, INFN, Catania (Italy); Azienda Ospedaliera Cannizzaro, Catania (Italy); Valastro, L. [Laboratori Nazionali del Sud, INFN, Catania (Italy); Scuola di Specializzazione in Fisica Sanitaria, Universita di Catania (Italy); Bucciolini, M. [Dipartimento di Fisiopatologia Clinica, Universita di Florence (Italy); Onori, S. [Istituto Superiore di Sanita, Rome (Italy)

    2005-10-21

    Diamond is potentially a very suitable material for use as on-line radiation dosimeter. Recent advances in the synthesis of polycrystalline diamond by chemical vapor deposition (CVD) techniques have produced material with electronic properties suitable for dosimetry applications. In this work the possibility to use a segmented commercial CVD detector in the dosimetry of proton beams has been investigated. The response as function of dose, dose rate, the priming and the rise time have been investigated thoroughly. This study shows the suitability of CVD diamond for dosimetry of clinical 62 MeV proton beams.

  16. Process in manufacturing high efficiency AlGaAs/GaAs solar cells by MO-CVD

    Science.gov (United States)

    Yeh, Y. C. M.; Chang, K. I.; Tandon, J.

    1984-01-01

    Manufacturing technology for mass producing high efficiency GaAs solar cells is discussed. A progress using a high throughput MO-CVD reactor to produce high efficiency GaAs solar cells is discussed. Thickness and doping concentration uniformity of metal oxide chemical vapor deposition (MO-CVD) GaAs and AlGaAs layer growth are discussed. In addition, new tooling designs are given which increase the throughput of solar cell processing. To date, 2cm x 2cm AlGaAs/GaAs solar cells with efficiency up to 16.5% were produced. In order to meet throughput goals for mass producing GaAs solar cells, a large MO-CVD system (Cambridge Instrument Model MR-200) with a susceptor which was initially capable of processing 20 wafers (up to 75 mm diameter) during a single growth run was installed. In the MR-200, the sequencing of the gases and the heating power are controlled by a microprocessor-based programmable control console. Hence, operator errors can be reduced, leading to a more reproducible production sequence.

  17. Radiation Hardness and Linearity Studies of CVD Diamonds

    CERN Document Server

    Behnke, T; Ghodbane, N; Imhof, A

    2003-01-01

    We report on the behavior of CVD diamonds under intense electromagnetic radiation and on the response of the detector to high density of deposited energy. Diamonds have been found to remain unaffected after doses of 10 MGy of MeV-range photons and the diamond response to energy depositions of up to 250 GeV/cm^3 has been found to be linear to better than 2 %. These observations make diamond an attractive detector material for a calorimeter in the very forward region of the detector proposed for TESLA.

  18. CVD of pure copper films from amidinate precursor

    OpenAIRE

    2009-01-01

    Copper(I) amidinate [Cu(i-Pr-Me-AMD)]2 was investigated to produce copper films in conventional low pressure chemical vapor deposition (CVD) using hydrogen as reducing gas-reagent. Copper films were deposited on steel, silicon, and SiO2/Si substrates in the temperature range 200–350°C at a total pressure of 1333 Pa. The growth rate on steel follows the surface reaction between atomic hydrogen and the entire precursor molecule up to 240°C. A significant increase of the growth rate at tempera...

  19. Influence of process pressure on β-SiC growth by CVD

    Science.gov (United States)

    Andreev, A. A.; Sultanov, A. O.; Gusev, A. S.; Kargin, N. I.; Pavlova, E. P.

    2014-10-01

    3C-SiC films grown on Si (100) substrates by CVD method using silane-propane- hydrogen system were analyzed for crystallinity at various process pressures. The deposition experiments were carried out in a shower-head type cold-wall CVD reactor. The influence of growth conditions on a structural modification of experimental samples was studied by X-ray diffraction (XRD) measurements, Fourier transform infrared spectroscopy (FTIR) and spectroscopic ellipsometry (SE).

  20. CVD of polymeric thin films: applications in sensors, biotechnology, microelectronics/organic electronics, microfluidics, MEMS, composites and membranes.

    Science.gov (United States)

    Ozaydin-Ince, Gozde; Coclite, Anna Maria; Gleason, Karen K

    2012-01-01

    Polymers with their tunable functionalities offer the ability to rationally design micro- and nano-engineered materials. Their synthesis as thin films have significant advantages due to the reduced amounts of materials used, faster processing times and the ability to modify the surface while preserving the structural properties of the bulk. Furthermore, their low cost, ease of fabrication and the ability to be easily integrated into processing lines, make them attractive alternatives to their inorganic thin film counterparts. Chemical vapor deposition (CVD) as a polymer thin-film deposition technique offers a versatile platform for fabrication of a wide range of polymer thin films preserving all the functionalities. Solventless, vapor-phase deposition enable the integration of polymer thin films or nanostructures into micro- and nanodevices for improved performance. In this review, CVD of functional polymer thin films and the polymerization mechanisms are introduced. The properties of the polymer thin films that determine their behavior are discussed and their technological advances and applications are reviewed.

  1. Refractive index sensitivity enhancement of optical fiber cladding mode by depositing nanofilm via ALD technology.

    Science.gov (United States)

    Zhao, Ying; Pang, Fufei; Dong, Yanhua; Wen, Jianxiang; Chen, Zhenyi; Wang, Tingyun

    2013-11-04

    The atomic layer deposition (ALD) technology is introduced to enhance the sensitivity of optical fiber cladding mode to surrounding refractive index (SRI) variation. The highly uniform Al2O nanofilm was deposited around the double cladding fiber (DCF) which presents cladding mode resonant feature. With the high refractive index coating, the cladding mode resonant spectrum was tuned. And the sensitivity enhancement for SRI sensor was demonstrated. Through adjusting the deposition cycles, a maximum sensitivity of 723 nm/RIU was demonstrated in the DCF with 2500 deposition cycles at the SRI of 1.34. Based on the analysis of cladding modes reorganization, the cladding modes transition of the coated DCF was investigated theoretically. With the high performance nanofilm coating, the proposed SRI sensor is expected to have wide applications in chemical sensors and biosensors.

  2. Physicochemical technologies for enhanced oil recovery in deposits with difficult-to-recover reserves

    Science.gov (United States)

    Altunina, L. K.; Kuvshinov, V. A.; Kuvshinov, I. V.

    2016-11-01

    The results of laboratory and field tests as well as the commercial use of new physicochemical technologies intended to enhance oil recovery in deposits with difficult-to-recover reserves are presented. They are based on the concept of reservoir energy used to generate gels, sols, and surfactant compositions preserving a complex of properties in the reservoir which are optimal for oil displacement.

  3. Creating pure nanostructures from electron-beam-induced deposition using purification techniques: a technology perspective

    NARCIS (Netherlands)

    Botman, A.; Mulders, J.J.L.; Hagen, C.W.

    2009-01-01

    The creation of functional nanostructures by electron-beam-induced deposition (EBID) is becoming more widespread. The benefits of the technology include fast ‘point-and-shoot’ creation of three-dimensional nanostructures at predefined locations directly within a scanning electron microscope. One sig

  4. The effect of alkaline doped catalysts on the CVD synthesis of carbon nanotubes

    DEFF Research Database (Denmark)

    Nemeth, Krisztian; Nemeth, Zoltan; Fejes, Dora;

    2011-01-01

    The aim of this work was to develop new doped catalysts for chemical vapour deposition (CVD) synthesis in order to increase the quantity and quality of carbon nanotubes (CNTs). Doping compounds such as CsBr, CsCl, KBr and KCl were used to reach higher carbon deposit and carbon yield. The amount o...

  5. CVD of solid oxides in porous substrates for ceramic membrane modification

    NARCIS (Netherlands)

    Lin, Y.S.; Burggraaf, A.J.

    1992-01-01

    The deposition of yttria-doped zirconia has been experimented systematically in various types of porous ceramic substrates by a modified chemical vapor deposition (CVD) process operating in an opposing reactant geometry using water vapor and corresponding metal chloride vapors as reactants. The effe

  6. Laser diagnostics and modeling of plasma assisted CVD. Final technical report

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-02-01

    Plasma assisted chemical vapor deposition (PACVD) represents a novel approach for utilizing the nonequilibrium effects of reactive plasmas for depositing a wide range of protective hardface coatings that have both wear and erosion application. The nonequilibrium plasma is the heart of this complex system and has the function of generating the reactive molecular fragments (radicals) and atomic species at concentration levels unattainable by other competing processes. It is now widely accepted that such advanced protective hardface coatings materials will play a vital role in the energy technologies of the coming decades, with major applications in diverse areas ranging from aerospace and commercial propulsion systems (jet engines) to automotive components and internal combustion engines, (ceramic heat engines), cutting and machining tools, electronic packaging, thermal management, and possibly room-temperature superconductors. Wear and associated erosion aspects are responsible for an enormous expenditure of energy and fiscal resources in almost all DOE applications. Many of the results from this investigation arc also applicable to other materials processing reactors such as electron beam, PVD, CVD, laser ablation, microwave, high energy cathodic arc, thermal plasma (rf or dc) and combustion spray. These also include the various hybrid systems such as the rf/dc arc as used in Japan for diamond deposition and e-beam PVD deposition of advanced titanium alloy coatings as used at the Paton Institute in Kiev, Ukraine.

  7. Cyclic oxidation performance of a CVD-FBR aluminised 18Cr-8Ni stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Perez, F.J.; Pedraza, F.; Hierro, M.P.; Carpintero, M.C.; Gomez, C. [Universidad Complutense de Madrid (Spain). Dept. de Ciencia de los Materiales

    2001-07-01

    Stainless steel is still the material of choice because it finds numerous applications and its good performance in different environments and its relatively low price. However, its poor mechanical strength and the formation of volatile CrO{sub 3} oxide under oxygen environments restrict their upper operation temperature to less than 950 C. Thus, the application of aluminide coatings may increase the upper limit of temperature of these steels in case they did not have to withstand important mechanical loads. Chemical vapour deposition in fluidised bed reactors (CVD-FBR) has been used to coat the AISI 304 stainless steel at temperatures of 525 C for 1.5 hours followed by a heat treatment up to 900 C under inert Ar gas. Cyclic oxidation experiments of both coated and uncoated specimens have been performed at 950 C under atmospheric pressure of air. The results will show that the application of the CVD-FBR is very promising as a surface modification technology since the behaviour of the coated specimens is much better than that of the uncoated ones. (orig.)

  8. Technological Aspects of High Speed Direct Laser Deposition Based on Heterophase Powder Metallurgy

    Science.gov (United States)

    Turichin, G. A.; Klimova, O. G.; Zemlyakov, E. V.; Babkin, K. D.; Kolodyazhnyy, D. Yu.; Shamray, F. A.; Travyanov, A. Ya.; Petrovskiy, P. V.

    The article deals with physical peculiarities and technology of high speed processes of direct laser deposition. On the base of theoretic research and computer modeling the powder transfer has been optimized, increasing process stability and productivity. Principles of nozzles design also have been developed in accordance with technological needs. An influence of process mode on product properties and material structure was defined for heat resisted Ni-based superalloys. Developed technology provided the mechanic properties of products on the level of rolled material and allows avoid heat treatment and HIP in production process. Possible ways for increasing process performance and economic efficiency also have been discussed.

  9. Origin, state of the art and some prospects of the diamond CVD

    CERN Document Server

    Spitsyn, B V; Alexenko, A E

    2000-01-01

    A short review on the diamond CVD origin, together with its state of the art and some prospects was given. New hybrid methods of the diamond CVD permit to gain 1.2 to 6 times of growth rate in comparison with ordinary diamond CVD's. Recent results on n-type diamond film synthesis through phosphorus doping in the course of the CVD process are briefly discussed. In comparison with high-pressure diamond synthesis, the CVD processes open new facets of the diamond as ultimate crystal for science and technology evolution. It was stressed that, mainly on the basis of new CVDs of diamond, the properties of natural diamond are not only reproduced, but can be surpassed. As examples, mechanical (fracture resistance), physical (thermal conductivity), and chemical (oxidation stability) properties are mentioned. Some present issues in the field are considered.

  10. Hot wire chemical vapor deposition: recent progress, present state of the art and competitive opportunities

    NARCIS (Netherlands)

    Schropp, R.E.I.

    2009-01-01

    Hot Wire CVD (also called Catalytic CVD or initiated CVD) is an elegant low pressure deposition technique for the deposition of functional films, both inorganic and organic, based on the decomposition of precursor sources at a heated metallic surface. The conformal deposition of thin films on rigid

  11. X-ray sensitivity measurements on CVD diamond film detectors

    Energy Technology Data Exchange (ETDEWEB)

    Foulon, F.; Pochet, T. [CEA Centre d`Etudes de Saclay, 91 - Gif-sur-Yvette (France). Dept. d`Electronique et d`Instrumentation Nucleaire; Gheeraert, E. [Centre National de la Recherche Scientifique (CNRS), 38 - Grenoble (France)

    1993-12-31

    Microwave chemical vapor deposited (CVD) diamond films have been used to fabricate radiation detectors. The polycrystalline diamond films have a resistivity of 10{sup 12} ohm.cm and carrier mobility and lifetime of about 280 cm{sup 2}/V.s and 530 ps. The detector response to laser pulses (355, 532 and 1064 nm), X-ray flux (15-50 keV) and alpha particles ({sup 241}Am, 5.49 MeV) has been investigated. The response speed of the detector is in the 100 ps range. A sensitivity of about 3 x 10{sup -10} A/V.Gy.s was measured under 50 keV X-ray flux. The detector current response to X-ray flux is almost linear. It is also shown that CVD diamond detectors can be used for alpha particle counting. (authors). 9 figs., 25 refs.

  12. Development of CVD diamond detectors for clinical dosimetry

    Science.gov (United States)

    Piliero, M. A.; Hugtenburg, R. P.; Ryde, S. J. S.; Oliver, K.

    2014-11-01

    The use of chemical vapour deposition (CVD) methods for the manufacture of diamonds could lead to detectors for high-resolution radiotherapy dosimetry that are cheaper and more reproducible than detectors based on natural diamonds. In this work two prototype designs (Diamond Detectors Ltd, Poole) of CVD diamond detectors were considered. The detectors were encapsulated in a water-proof housing in a form-factor that would be suitable for dosimetry measurements in water, as well as solid material phantoms. Stability of the dosimeter over time, the dose-response, dose-rate response and angular-response were examined. The study demonstrated that the detector behaviour conformed with theory in terms of the dose-rate response and had acceptable properties for use in the clinic.

  13. Optimization of process parameters in a large-area hot-wire CVD reactor for the deposition of amorphous silicon (a-Si:H) for solar cell application with highly uniform material quality

    Energy Technology Data Exchange (ETDEWEB)

    Pflueger, A.; Mukherjee, C.; Schroeder, B. [Department of Physics, Center of Materials Science, University of Kaiserslautern, P.O. Box 3049, D-67653 Kaiserslautern (Germany)

    2002-07-01

    Scale-up of a-Si:H-based thin film applications such as solar cells, entirely or partly prepared by hot-wire chemical vapor deposition (HWCVD), requires research on the deposition process in a large-area HWCVD system. The influence of gas supply and filament geometry on thickness uniformity has already been reported, but their influence on material quality is systematically studied for the first time. The optimization of deposition parameters for obtaining best material quality in our large-area HWCVD system resulted in an optimum filament temperature, T{sub fil}{approx}1600C, pressure, p=8mTorr and silane flow, F(SiH{sub 4})=100sccm, keeping the substrate temperature at T{sub S}=200C. A special gas supply (gas shower with tiny holes of uniform size) and a filament grid, consisting of six filaments with an interfilament distance, d{sub fil}=4cm were used. The optimum filament-to-substrate distance was found to be d{sub fil-S}=8.4cm. While studying the influence of different d{sub fil} and gas supply configurations on the material quality, the above-mentioned setup and parameters yield best results for both uniformity and material quality. With the setup mentioned, we could achieve device quality a-Si:H films with a thickness uniformity of {+-}2.5% on a circular area of 20cm in diameter. The material, grown at a deposition rate of r{sub d}{approx}4A/s, was characterized on nine positions of the 30cmx30cm substrate area, and revealed reasonable uniformity of the opto-electronic properties, e.g photosensitivity, {sigma}{sub Ph}/{sigma}{sub D}=(2.46{+-}0.7)x10{sup 5}, microstructure factor, R=0.17{+-}0.05, defect densities, N{sub d(PDS)}=(2.06{+-}0.6)x10{sup 17}cm{sup -3} and N{sub d(CPM)}=(2.05{+-}0.5)x10{sup 16}cm{sup -3} (film properties are given as mean values and standard deviations). Finally, we fabricated pin solar cells, with the i-layer deposited on small-area p-substrates distributed over an area of 20cmx20cm in this large-area deposition system, and

  14. Electrochromic behavior in CVD grown tungsten oxide films

    Science.gov (United States)

    Gogova, D.; Iossifova, A.; Ivanova, T.; Dimitrova, Zl; Gesheva, K.

    1999-03-01

    Solid state electrochemical devices (ECDs) for smart windows, large area displays and automobile rearview mirrors are of considerable technological and commercial interest. In this paper, we studied the electrochromic properties of amorphous and polycrystalline CVD carbonyl tungsten oxide films and the possibility for sol-gel thin TiO 2 film to play the role of passive electrode in an electrochromic window with solid polymer electrolyte.

  15. Electrochromic behavior in CVD grown tungsten oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Gogova, D.; Iossifova, A.; Ivanova, T.; Gesheva, K.; Dimitrova, Z. [Central Laboratory for Solar Energy and New Energy Sources at Bulgarian Academy of Science, 72 Tzarigradsko shossee Blvd., Sofia (Bulgaria)

    1999-03-15

    Solid state electrochemical devices (ECDs) for smart windows, large area displays and automobile rearview mirrors are of considerable technological and commercial interest. In this paper, we studied the electrochromic properties of amorphous and polycrystalline CVD carbonyl tungsten oxide films and the possibility for sol-gel thinTiO{sub 2} film to play the role of passive electrode in an electrochromic window with solid polymer electrolyte

  16. New deposition processes for the growth of oxide and nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Apen, E.A.; Atagi, L.M.; Barbero, R.S.; Espinoza, B.F.; Hubbard, K.M.; Salazar, K.V.; Samuels, J.A.; Smith, D.C. [Los Alamos National Lab., NM (US); Hoffman, D.M. [Univ. of Houston, TX (US)

    1998-11-01

    This is the final report of a three-year, Laboratory Directed Research and Development (LDRD) project at Los Alamos National Laboratory (LANL). The goal of this effort is to study the use of homoleptic metal amido compounds as precursors for chemical vapor deposition (CVD). The amides offer potential for the deposition of a variety of important materials at low temperatures. The establishment of these precursor compounds will enhance the ability to exploit the properties of advanced materials in numerous coatings applications. Experiments were performed to study the reactivity of Sn[NMe{sub 2}]{sub 4} with oxygen. The data demonstrated that gas-phase insertion of oxygen into the Sn-N bond, leading to a reactive intermediate, plays an important role in tin oxide deposition. Several CVD processes for technologically important materials were developed using the amido precursor complexes. These included the plasma enhanced CVD of TiN and Zr{sub 3}N{sub 4}, and the thermal CVD of GaN and Al N. Quality films were obtained in each case, demonstrating the potential of the amido compounds as CVD precursors.

  17. Plasma-based ion implantation and deposition: A review of physics,technology, and applications

    Energy Technology Data Exchange (ETDEWEB)

    Pelletier, Jacques; Anders, Andre

    2005-05-16

    After pioneering work in the 1980s, plasma-based ion implantation (PBII) and plasma-based ion implantation and deposition (PBIID) can now be considered mature technologies for surface modification and thin film deposition. This review starts by looking at the historical development and recalling the basic ideas of PBII. Advantages and disadvantages are compared to conventional ion beam implantation and physical vapor deposition for PBII and PBIID, respectively, followed by a summary of the physics of sheath dynamics, plasma and pulse specifications, plasma diagnostics, and process modeling. The review moves on to technology considerations for plasma sources and process reactors. PBII surface modification and PBIID coatings are applied in a wide range of situations. They include the by-now traditional tribological applications of reducing wear and corrosion through the formation of hard, tough, smooth, low-friction and chemically inert phases and coatings, e.g. for engine components. PBII has become viable for the formation of shallow junctions and other applications in microelectronics. More recently, the rapidly growing field of biomaterial synthesis makes used of PBII&D to produce surgical implants, bio- and blood-compatible surfaces and coatings, etc. With limitations, also non-conducting materials such as plastic sheets can be treated. The major interest in PBII processing originates from its flexibility in ion energy (from a few eV up to about 100 keV), and the capability to efficiently treat, or deposit on, large areas, and (within limits) to process non-flat, three-dimensional workpieces, including forming and modifying metastable phases and nanostructures. We use the acronym PBII&D when referring to both implantation and deposition, while PBIID implies that deposition is part of the process.

  18. Nucleation and growth of chemically vapor deposited tungsten on various substrate materials: A review

    Energy Technology Data Exchange (ETDEWEB)

    Broadbent, E.K.

    1987-11-01

    W films produced by chemical-vapor deposition (CVD), typically via reduction of WF/sub 6/, are being used for numerous applications in very large scale integrated circuit technology. Blanket and selectively deposited films require nucleation and growth on a specific underlayer material: Si, metal, or metal silicide. The compatibility of CVD W with various underlayers is reviewed for the device applications of contact/via fill, diffusion barrier, metal interconnect, and source/drain coating. Nucleation of W directly on single crystal Si can sometimes produce tunnel-defect structures at the edges or along the entire interface of the deposit. Sputtered Mo and W, and to some extent TiW and TiN, have been shown to be suitable nucleation layers for CVD W, yielding a fluorine-free interface with low-electrical contact resistance. A sputtered W/Ti adhesion bilayer is demonstrated for a blanket W deposition+etchback process. CoSi/sub 2/ appears an appropriate choice where CVD W and salicide technologies are combined.

  19. Mass production of CNTs using CVD multi-quartz tubes

    Energy Technology Data Exchange (ETDEWEB)

    Yousef, Samy; Mohamed, Alaa [Dept. of Production Engineering and Printing Technology, Akhbar Elyom Academy, Giza (Egypt)

    2016-11-15

    Carbon nanotubes (CNTs) have become the backbone of modern industries, including lightweight and heavy-duty industrial applications. Chemical vapor deposition (CVD) is considered as the most common method used to synthesize high yield CNTs. This work aims to develop the traditional CVD for the mass production of more economical CNTs, meeting the growing CNT demands among consumers by increasing the number of three particular reactors. All reactors housing is connected by small channels to provide the heat exchange possibility between the chambers, thereby decreasing synthesis time and reducing heat losses inside the ceramic body of the furnace. The novel design is simple and cheap with a lower reacting time and heat loss compared with the traditional CVD design. Methane, hydrogen, argon, and catalyzed iron nanoparticles were used as a carbon source and catalyst during the synthesis process. In addition, CNTs were produced using only a single quartz tube for comparison. The produced samples were examined using XRD, TEM, SEM, FTIR, and TGA. The results showed that the yield of CNTs increases by 287 % compared with those synthesized with a single quartz tube. Moreover, the total synthesis time of CNTs decreases by 37 % because of decreased heat leakage.

  20. Chemical vapor deposition of mullite coatings

    Science.gov (United States)

    Sarin, Vinod; Mulpuri, Rao

    1998-01-01

    This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

  1. Development of Diffusion barrier coatings and Deposition Technologies for Mitigating Fuel Cladding Chemical Interactions (FCCI)

    Energy Technology Data Exchange (ETDEWEB)

    Sridharan, Kumar; Allen, Todd; Cole, James

    2013-02-27

    The goal of this project is to develop diffusion barrier coatings on the inner cladding surface to mitigate fuel-cladding chemical interaction (FCCI). FCCI occurs due to thermal and radiation enhanced inter-diffusion between the cladding and fuel materials, and can have the detrimental effects of reducing the effective cladding wall thickness and lowering the melting points of the fuel and cladding. The research is aimed at the Advanced Burner Reactor (ABR), a sodium-cooled fast reactor, in which higher burn-ups will exacerbate the FCCI problem. This project will study both diffusion barrier coating materials and deposition technologies. Researchers will investigate pure vanadium, zirconium, and titanium metals, along with their respective oxides, on substrates of HT-9, T91, and oxide dispersion-strengthened (ODS) steels; these materials are leading candidates for ABR fuel cladding. To test the efficacy of the coating materials, the research team will perform high-temperature diffusion couple studies using both a prototypic metallic uranium fuel and a surrogate the rare-earth element lanthanum. Ion irradiation experiments will test the stability of the coating and the coating-cladding interface. A critical technological challenge is the ability to deposit uniform coatings on the inner surface of cladding. The team will develop a promising non-line-of-sight approach that uses nanofluids . Recent research has shown the feasibility of this simple yet novel approach to deposit coatings on test flats and inside small sections of claddings. Two approaches will be investigated: 1) modified electrophoretic deposition (MEPD) and 2) boiling nanofluids. The coatings will be evaluated in the as-deposited condition and after sintering.

  2. PE-CVD fabrication of germanium nanoclusters for memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Duerkop, T. [Institut fuer Materialien und Bauelemente der Elektronik, Leibniz Universitaet Hannover, Appelstrasse 11a, 30167 Hannover (Germany)], E-mail: duerkop@mbe.uni-hannover.de; Bugiel, E. [Institut fuer Materialien und Bauelemente der Elektronik, Leibniz Universitaet Hannover, Appelstrasse 11a, 30167 Hannover (Germany); Costina, I. [IHP GmbH, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Ott, A.; Peibst, R.; Hofmann, K.R. [Institut fuer Materialien und Bauelemente der Elektronik, Leibniz Universitaet Hannover, Appelstrasse 11a, 30167 Hannover (Germany)

    2008-02-15

    We have investigated Ge nanoclusters (Ge-NC) embedded in silicon dioxide, whose fundamental properties promise improved characteristics in NC flash memory devices as compared to Si nanoclusters. We present a simple new method, based on plasma-enhanced CVD (PE-CVD) deposition of amorphous Ge (a-Ge) onto SiO{sub 2}, to create gate stacks with embedded Ge-NC at vertically well-controlled positions suitable for use in flash memory devices. This process minimizes the exposure of Ge to environmental influences by depositing a-Ge as well as a SiO{sub 2} cap layer in situ within the same deposition chamber. Subsequent high-temperature anneals compatible with the temperature budget of CMOS processing are used for the actual cluster formation. Variation of annealing temperature and duration of this step as well as the thickness of the initial Ge layer controls the average cluster radius and density, as determined by transmission electron microscopy (TEM). Measurements of electrical properties show the capability of samples with NC to store charge.

  3. CVD growth and processing of graphene for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Shishir; Rezvani, Ehsan; Nolan, Hugo; Duesberg, Georg S. [School of Chemistry, Trinity College Dublin, Dublin 2 (Ireland); Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland); McEvoy, Niall; Kim, Hye-Young; Lee, Kangho; Peltekis, Nikos; Weidlich, Anne; Daly, Ronan [Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 (Ireland)

    2011-11-15

    The remarkable properties of graphene have potential for numerous applications; however, their exploitation depends on its reliable production. The chemical vapour deposition (CVD) growth of graphene on metal surfaces has become one of the most promising strategies for the production of high quality graphene in a scaleable manner. Here, we discuss graphene growth on nickel (Ni) and copper (Cu) directly from both gaseous hydrocarbons and solid carbon precursors. Further, we discuss in detail the transfer of graphene films to insulating substrates, by direct and polymer supported transfer methods. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Ultratough CVD single crystal diamond and three dimensional growth thereof

    Science.gov (United States)

    Hemley, Russell J [Washington, DC; Mao, Ho-kwang [Washington, DC; Yan, Chih-shiue [Washington, DC

    2009-09-29

    The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

  5. Development of CVD Mullite Coatings for SiC Fibers

    Energy Technology Data Exchange (ETDEWEB)

    Sarin, V.K.; Varadarajan, S.

    2000-03-15

    A process for depositing CVD mullite coatings on SiC fibers for enhanced oxidation and corrosion, and/or act as an interfacial protective barrier has been developed. Process optimization via systematic investigation of system parameters yielded uniform crystalline mullite coatings on SiC fibers. Structural characterization has allowed for tailoring of coating structure and therefore properties. High temperature oxidation/corrosion testing of the optimized coatings has shown that the coatings remain adherent and protective for extended periods. However, preliminary tests of coated fibers showed considerable degradation in tensile strength.

  6. Chromized Layers Produced on Steel Surface by Means of CVD

    Institute of Scientific and Technical Information of China (English)

    KASPRZYCKA Ewa; BOGDA(N)SKI Bogdan; JEZIORSKI Leopold; JASI(N)SKI J(o)zef; TORBUS Roman

    2004-01-01

    Chemical vapour deposition of chromium on the surface of carbon steel has been investigated using a novel CVD method that combines the low cost of pack cementation method with advantages of vacuum technique. The processes have been performed in chromium chlorides atmosphere at a low pressure range from 1 to 800 hPa, the treatment temperature 800 to 950℃. Studies of the layers thickness, the phase composition, Cr, C and Fe depth profiles in diffusion zone have been conducted. The effect of the vacuum level during the process and the process parameters such as time and temperature on layer diffusion growth on the carbon steel surface has been investigated.

  7. CVD diamond sensor for UV-photon detection

    CERN Document Server

    Periale, L; Gervino, G; Lamarina, A M; Palmisano, C; Periale, R; Picchi, P

    2012-01-01

    A new generation of UV photosensors, based on single crystal Chemical Vapour Deposition (CVD) diamonds to work optically coupled with large volume two-phase liquid-Ar (LAr) or liquid-Xe (LXe) detectors nowadays under design for the next generation of WIMPs experiments, is under development. Preliminary tests and first calibrations show these devices can have better performance than the existing UV sensitive detectors (higher photosensitivity and better signal-to-noise ratio). I-V characteristics, dark current measurements, linearity response to X-ray irradiation, and alpha-particle energy resolution are reported and discussed. (C) 2011 Elsevier B.V. All rights reserved.

  8. Large-Scale Graphene Film Deposition for Monolithic Device Fabrication

    Science.gov (United States)

    Al-shurman, Khaled

    Since 1958, the concept of integrated circuit (IC) has achieved great technological developments and helped in shrinking electronic devices. Nowadays, an IC consists of more than a million of compacted transistors. The majority of current ICs use silicon as a semiconductor material. According to Moore's law, the number of transistors built-in on a microchip can be double every two years. However, silicon device manufacturing reaches its physical limits. To explain, there is a new trend to shrinking circuitry to seven nanometers where a lot of unknown quantum effects such as tunneling effect can not be controlled. Hence, there is an urgent need for a new platform material to replace Si. Graphene is considered a promising material with enormous potential applications in many electronic and optoelectronics devices due to its superior properties. There are several techniques to produce graphene films. Among these techniques, chemical vapor deposition (CVD) offers a very convenient method to fabricate films for large-scale graphene films. Though CVD method is suitable for large area growth of graphene, the need for transferring a graphene film to silicon-based substrates is required. Furthermore, the graphene films thus achieved are, in fact, not single crystalline. Also, graphene fabrication utilizing Cu and Ni at high growth temperature contaminates the substrate that holds Si CMOS circuitry and CVD chamber as well. So, lowering the deposition temperature is another technological milestone for the successful adoption of graphene in integrated circuits fabrication. In this research, direct large-scale graphene film fabrication on silicon based platform (i.e. SiO2 and Si3N4) at low temperature was achieved. With a focus on low-temperature graphene growth, hot-filament chemical vapor deposition (HF-CVD) was utilized to synthesize graphene film using 200 nm thick nickel film. Raman spectroscopy was utilized to examine graphene formation on the bottom side of the Ni film

  9. IFP technologies for flow assurance. Modeling, thermal insulation, deposit prevention, additives, testing facilities

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2005-07-01

    Flow assurance has become one of the central topics covering the choice of a given field architecture and the specification of its production process. The relevant analysis includes the evaluation of risks and uncertainties associated with operational procedures, and contributes to a better estimate of the economics of a specific hydrocarbon production. This brochure presents an overview of innovative technologies, either available through IFP licensees or still under development by IFP and its industrial partners. The purpose of these technologies, related to Flow Assurance, is to secure the production operations, minimizing the down times, and reducing the production costs, particularly in the field of thermal insulation, deposit prevention and remediation. All these technologies benefit from the input of highly skilled teams from the Applied Mechanics, Applied Chemistry and Physical Chemistry Divisions of IFP, and rely on the design and use of sophisticated experimental laboratory and pilot equipment as well as advanced simulations and predictive modeling.

  10. Atomic layer deposition assisted pattern transfer technology for ultra-thin block copolymer films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Wenhui; Luo, Jun; Meng, Lingkuan; Li, Junjie; Xiang, Jinjuan; Li, Junfeng; Wang, Wenwu; Chen, Dapeng; Ye, Tianchun; Zhao, Chao

    2016-08-31

    As an emerging developing technique for next-generation lithography, directed self-assembly (DSA) of block copolymer (BCP) has attracted numerous attention and has been a potential alternative to supplement the intrinsic limitations of conventional photolithography. In this work, the self-assembling properties of a lamellar diblock copolymer poly(styrene-b-methylmethacrylate) (PS-b-PMMA, 22k-b-22k, L{sub 0} = 25 nm) on Si substrate and an atomic layer deposition (ALD)-assisted pattern transfer technology for the application of DSA beyond 16/14 nm complementary metal oxide semiconductor (CMOS) technology nodes, were investigated. Firstly, two key processing parameters of DSA, i.e. annealing temperatures and durations of BCP films, were optimized to achieve low defect density and high productivity. After phase separation of BCP films, self-assembling patterns of low defect density should be transferred to the substrate. However, due to the nano-scale thickness and the weak resistance of BCP films to dry etching, it is nearly impossible to transfer the BCP patterns directly to the substrate. Therefore, an ALD-based technology was explored in this work, in which deposited Al{sub 2}O{sub 3} selectively reacts with PMMA blocks thus hardening the PMMA patterns. After removing PS blocks by plasma etching, hardened PMMA patterns were left and transferred to underneath SiO{sub 2} hard mask layer. Using this patterned hard mask, nanowire array of 25 nm pitch were realized on Si substrate. From this work, a high-throughput DSA baseline flow and related ALD-assisted pattern transfer technique were developed and proved to have good capability with the mainstream CMOS technology. - Highlights: • Optimization on self-assembly process for high productivity and low defectivity • Enhancement of etching ratio and resistance by atomic layer deposition (ALD) • A hard mask was used for pattern quality improvement and contamination control.

  11. Fracture Characteristics of Monolayer CVD-Graphene

    Science.gov (United States)

    Hwangbo, Yun; Lee, Choong-Kwang; Kim, Sang-Min; Kim, Jae-Hyun; Kim, Kwang-Seop; Jang, Bongkyun; Lee, Hak-Joo; Lee, Seoung-Ki; Kim, Seong-Su; Ahn, Jong-Hyun; Lee, Seung-Mo

    2014-03-01

    We have observed and analyzed the fracture characteristics of the monolayer CVD-graphene using pressure bulge testing setup. The monolayer CVD-graphene has appeared to undergo environmentally assisted subcritical crack growth in room condition, i.e. stress corrosion cracking arising from the adsorption of water vapor on the graphene and the subsequent chemical reactions. The crack propagation in graphene has appeared to be able to be reasonably tamed by adjusting applied humidity and stress. The fracture toughness, describing the ability of a material containing inherent flaws to resist catastrophic failure, of the CVD-graphene has turned out to be exceptionally high, as compared to other carbon based 3D materials. These results imply that the CVD-graphene could be an ideal candidate as a structural material notwithstanding environmental susceptibility. In addition, the measurements reported here suggest that specific non-continuum fracture behaviors occurring in 2D monoatomic structures can be macroscopically well visualized and characterized.

  12. Formation of High-quality Advanced High-k Oxide Layers at Low Temperature by Excimer UV Lamp-assisted Photo-CVD and Sol-gel Processing

    Institute of Scientific and Technical Information of China (English)

    YU J. J.

    2004-01-01

    We have successfully demonstrated that high quality and high dielectric constant layers can be fabricated by low temperature photo-induced or -assisted processing. Ta2O5 and ZrO2 have been deposited at t<400 ℃by means of a UV photo-CVD technique and HfO2 by photo-assisted sol-gel processing with the aid of excimer lamps. The UV annealing of as-grown layers was found to significantly improve their electrical properties.Low leakage current densities on the order of 10-8 A/cm2 at 1 MV/cm for deposited ultrathin Ta2O5 films and ca. 10-6 A/cm2 for the photo-CVD ZrO2 layers and photo-irradiated sol-gel HfO2 layers have been readily achieved. The improvement in the leakage properties of these layers is attributed to the UV-generated active oxygen species O(1D) which strongly oxidize any suboxides to form more stoichiometric oxides on removing certain defects, oxygen vacancies and impurities present in the as-prepared layers. The photo-CVD Ta2O5films deposited across 10. 16-cm Si wafers exhibit a high thickness uniformity with a variation of less than ±2.0% being obtained for ultrathin ca. 10 nm thick films. The lamp technology can in principle be extended to larger area wafers, providing a promising low temperature route to the fabrication of a range of high quality thin films for future ULSI technology.

  13. Non-classical crystallization of thin films and nanostructures in CVD and PVD processes

    CERN Document Server

    Hwang, Nong Moon

    2016-01-01

    This book provides a comprehensive introduction to a recently-developed approach to the growth mechanism of thin films and nanostructures via chemical vapour deposition (CVD). Starting from the underlying principles of the low pressure synthesis of diamond films, it is shown that diamond growth occurs not by individual atoms but by charged nanoparticles. This newly-discovered growth mechanism turns out to be general to many CVD and some physical vapor deposition (PVD) processes. This non-classical crystallization is a new paradigm of crystal growth, with active research taking place on growth in solution, especially in biomineralization processes. Established understanding of the growth of thin films and nanostructures is based around processes involving individual atoms or molecules. According to the author’s research over the last two decades, however, the generation of charged gas phase nuclei is shown to be the rule rather than the exception in the CVD process, and charged gas phase nuclei are actively ...

  14. iCVD Cyclic Polysiloxane and Polysilazane as Nanoscale Thin-Film Electrolyte: Synthesis and Properties.

    Science.gov (United States)

    Chen, Nan; Reeja-Jayan, B; Liu, Andong; Lau, Jonathan; Dunn, Bruce; Gleason, Karen K

    2016-03-01

    A group of crosslinked cyclic siloxane (Si-O) and silazane (Si-N) polymers are synthesized via solvent-free initiated chemical vapor deposition (iCVD). Notably, this is the first report of cyclic polysilazanes synthesized via the gas-phase iCVD method. The deposited nanoscale thin films are thermally stable and chemically inert. By iCVD, they can uniformly and conformally cover nonplanar surfaces having complex geometry. Although polysiloxanes are traditionally utilized as dielectric materials and insulators, our research shows these cyclic organosilicon polymers can conduct lithium ions (Li(+) ) at room temperature. The conformal coating and the room temperature ionic conductivity make these cyclic organosilicon polymers attractive for use as thin-film electrolytes in solid-state batteries. Also, their synthesis process and properties have been systemically studied and discussed.

  15. Fracture Characteristics of Monolayer CVD-Graphene

    OpenAIRE

    Hwangbo, Yun; Lee, Choong-Kwang; Kim, Sang-Min; Kim, Jae-Hyun; Kim, Kwang-Seop; Jang, Bongkyun; Lee, Hak-Joo; Lee, Seoung-Ki; Kim, Seong-Su; Ahn, Jong-Hyun; Lee, Seung-Mo

    2014-01-01

    We have observed and analyzed the fracture characteristics of the monolayer CVD-graphene using pressure bulge testing setup. The monolayer CVD-graphene has appeared to undergo environmentally assisted subcritical crack growth in room condition, i.e. stress corrosion cracking arising from the adsorption of water vapor on the graphene and the subsequent chemical reactions. The crack propagation in graphene has appeared to be able to be reasonably tamed by adjusting applied humidity and stress. ...

  16. Growth and characteristics of tantalum oxide thin films deposited using thermionic vacuum arc technology

    Science.gov (United States)

    Vladoiu, Rodica; Ciupina, Victor; Mandes, Aurelia; Dinca, Virginia; Prodan, Madalina; Musa, Geavit

    2010-11-01

    Tantalum pentoxide (Ta2O5) thin films were synthesized using thermionic vacuum arc (TVA) technology. TVA is an original deposition method using a combination of anodic arc and electron gun system for the growth of thin films from solid precursors under vacuum of 10-6 Torr. The properties of the deposited Ta2O5 thin films were investigated in terms of wettability, refractive index, morphology, and structure. The surface free energy was determined by means of surface energy evaluation system indicating a hydrophilic character and the refractive index was measured by Filmetrics F20 device. The morphology was determined from bright field transmission electron microscopy (TEM) image performed by Philips CM 120 ST TEM system. It exhibits nanoparticles of 3-6 nm diameter smoothly distributed. Selected area electron diffraction pattern revealed the contrast fringes given by complex polycrystalline particles included in the amorphous film. The measured fringes could be indexed using monoclinic structure of Ta2O5.

  17. Recent Results from Beam Tests of 3D and Pad pCVD Diamond Detectors

    CERN Document Server

    Wallny, Rainer

    2017-01-01

    Results from prototypes of a detector using chemical vapor deposited (CVD) diamond with embedded resistive electrodes in the bulk forming a 3D diamond device are presented. A detector system consisting of 3D devices based on poly-crystalline CVD (pCVD) diamond was connected to a multi-channel readout and successfully tested in a 120 GeV/c proton beam at CERN proving for the first time the feasibility of the 3D detector concept in pCVD for particle tracking applications. We also present beam test results on the dependence of signal size on incident particle rate in charged particle detectors based on poly-crystalline CVD diamond. The detectors were tested in a 260 MeV/c pion beam over a range of particle fluxes from 2 kHz/cm2 to 10 MHz/cm2 . The pulse height of the sensors was measured with pad readout electronics at a peaking time of 7 ns. Our data from the 2015 beam tests at PSI indicate that the pulse height of poly-crystalline CVD diamond sensor irradiated to 5×1014 neq/cm2 is independent of particle flux...

  18. INFLUENCE OF PROCESS PARAMETERS ON DIMENSIONAL ACCURACY OF PARTS MANUFACTURED USING FUSED DEPOSITION MODELLING TECHNOLOGY

    Directory of Open Access Journals (Sweden)

    Filip Górski

    2013-09-01

    Full Text Available The paper presents the results of experimental study – part of research of additive technology using thermoplastics as a build material, namely Fused Deposition Modelling (FDM. Aim of the study was to identify the relation between basic parameter of the FDM process – model orientation during manufacturing – and a dimensional accuracy and repeatability of obtained products. A set of samples was prepared – they were manufactured with variable process parameters and they were measured using 3D scanner. Significant differences in accuracy of products of the same geometry, but manufactured with different set of process parameters were observed.

  19. ANNULUS CLOSURE TECHNOLOGY DEVELOPMENT INSPECTION/SALT DEPOSIT CLEANING MAGNETIC WALL CRAWLER

    Energy Technology Data Exchange (ETDEWEB)

    Minichan, R; Russell Eibling, R; James Elder, J; Kevin Kane, K; Daniel Krementz, D; Rodney Vandekamp, R; Nicholas Vrettos, N

    2008-06-01

    The Liquid Waste Technology Development organization is investigating technologies to support closure of radioactive waste tanks at the Savannah River Site (SRS). Tank closure includes removal of the wastes that have propagated to the tank annulus. Although amounts and types of residual waste materials in the annuli of SRS tanks vary, simple salt deposits are predominant on tanks with known leak sites. This task focused on developing and demonstrating a technology to inspect and spot clean salt deposits from the outer primary tank wall located in the annulus of an SRS Type I tank. The Robotics, Remote and Specialty Equipment (RRSE) and Materials Science and Technology (MS&T) Sections of the Savannah River National Laboratory (SRNL) collaborated to modify and equip a Force Institute magnetic wall crawler with the tools necessary to demonstrate the inspection and spot cleaning in a mock-up of a Type I tank annulus. A remote control camera arm and cleaning head were developed, fabricated and mounted on the crawler. The crawler was then tested and demonstrated on a salt simulant also developed in this task. The demonstration showed that the camera is capable of being deployed in all specified locations and provided the views needed for the planned inspection. It also showed that the salt simulant readily dissolves with water. The crawler features two different techniques for delivering water to dissolve the salt deposits. Both water spay nozzles were able to dissolve the simulated salt, one is more controllable and the other delivers a larger water volume. The cleaning head also includes a rotary brush to mechanically remove the simulated salt nodules in the event insoluble material is encountered. The rotary brush proved to be effective in removing the salt nodules, although some fine tuning may be required to achieve the best results. This report describes the design process for developing technology to add features to a commercial wall crawler and the results of the

  20. Photochemical CVD of Ru on functionalized self-assembled monolayers from organometallic precursors

    Science.gov (United States)

    Johnson, Kelsea R.; Arevalo Rodriguez, Paul; Brewer, Christopher R.; Brannaka, Joseph A.; Shi, Zhiwei; Yang, Jing; Salazar, Bryan; McElwee-White, Lisa; Walker, Amy V.

    2017-02-01

    Chemical vapor deposition (CVD) is an attractive technique for the metallization of organic thin films because it is selective and the thickness of the deposited film can easily be controlled. However, thermal CVD processes often require high temperatures which are generally incompatible with organic films. In this paper, we perform proof-of-concept studies of photochemical CVD to metallize organic thin films. In this method, a precursor undergoes photolytic decomposition to generate thermally labile intermediates prior to adsorption on the sample. Three readily available Ru precursors, CpRu(CO)2Me, (η3-allyl)Ru(CO)3Br, and (COT)Ru(CO)3, were employed to investigate the role of precursor quantum yield, ligand chemistry, and the Ru oxidation state on the deposition. To investigate the role of the substrate chemistry on deposition, carboxylic acid-, hydroxyl-, and methyl-terminated self-assembled monolayers were used. The data indicate that moderate quantum yields for ligand loss (φ ≥ 0.4) are required for ruthenium deposition, and the deposition is wavelength dependent. Second, anionic polyhapto ligands such as cyclopentadienyl and allyl are more difficult to remove than carbonyls, halides, and alkyls. Third, in contrast to the atomic layer deposition, acid-base reactions between the precursor and the substrate are more effective for deposition than nucleophilic reactions. Finally, the data suggest that selective deposition can be achieved on organic thin films by judicious choice of precursor and functional groups present on the substrate. These studies thus provide guidelines for the rational design of new precursors specifically for selective photochemical CVD on organic substrates.

  1. Controlling the resistivity gradient in chemical vapor deposition-deposited aluminum-doped zinc oxide

    NARCIS (Netherlands)

    Ponomarev, M. V.; Verheijen, M. A.; Keuning, W.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO: Al layers by focusing on the control

  2. CVD Diamond Detector Stability Issues for Operation at the National Ignition Facility

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, G J; Koch, J A; Moran, M J; Lerche, R A; Izumi, N; Phillips, T W; Glebov, V Y; Sangster, T C; Stoeckl, C

    2003-08-22

    Synthetic diamond crystals produced by the Chemical Vapor Deposition (CVD) technique can serve as fast, radiation hard, neutron sensors for the National Ignition Facility (NIF). Here we explore the stability issues, such as charge trapping and high-flux saturation, that will be relevant to operation at the NIF.

  3. Modelling and analysis of CVD processes in porous media for ceramic composite preparation

    NARCIS (Netherlands)

    Lin, Y.S.; Burggraaf, A.J.

    1991-01-01

    A continuum phenomenological model is presented to describe chemical vapour deposition (CVD) of solid product inside porous substrate media for the preparation of reinforced ceramic-matrix composites [by the chemical vapour infiltration (CVI) process] and ceramic membrane composites (by a modified C

  4. Control of Reaction Surface in Low Temperature CVD to Enhance Nucleation and Conformal Coverage

    Science.gov (United States)

    Kumar, Navneet

    2009-01-01

    The Holy Grail in CVD community is to find precursors that can afford the following: good nucleation on a desired substrate and conformal deposition in high AR features. Good nucleation is not only necessary for getting ultra-thin films at low thicknesses; it also offers films that are smooth at higher thickness values. On the other hand,…

  5. Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

    NARCIS (Netherlands)

    Seshan, V.; Ullien, D.; Castellanos-Gomez, A.; Sachdeva, S.; Murthy, D.H.K.; Savenije, T.J.; Ahmad, H.A.; Nunney, T.S.; Janssens, S.D.; Haenen, K.; Nesládek, M.; Van der Zant, H.S.J.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

    2013-01-01

    A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ∼50 ml/min (STP) at ∼850

  6. Technology of High-speed Direct Laser Deposition from Ni-based Superalloys

    Science.gov (United States)

    Klimova-Korsmik, Olga; Turichin, Gleb; Zemlyakov, Evgeniy; Babkin, Konstantin; Petrovsky, Pavel; Travyanov, Andrey

    Recently, additive manufacturing is the one of most perspective technologies; it can replace conventional methods of casting and subsequent time-consuming machining. One of the most interesting additive technologies - high-speed direct laser deposition (HSDLD) allows realizing heterophase process during the manufacturing, which there is process takes place with a partial melting of powder. This is particularly important for materials, which are sensitive to strong fluctuations of temperature treatment regimes, like nickel base alloys with high content of gamma prime phase. This alloys are interested for many industrial areas, mostly there are used in engine systems, aircraft and shipbuilding, aeronautics. Heating and cooling rates during the producing process determine structure and affect on its properties. Using HSDLD process it possible to make a products from Ni superalloys with ultrafine microstructure and satisfactory mechanical characteristics without special subsequent heatreatment.

  7. Fabrication of Titanium Dioxide Thin Films by DBD-CVD Under Atmosphere

    Institute of Scientific and Technical Information of China (English)

    ZHANG Xi-wen; GUO Yu; HAN Gao-rong

    2007-01-01

    Titanium dioxide films were firstly deposited on glass substrate by DBD-CVD (dielectric barrier discharge enhanced chemical vapor deposition) technique.The structure of the films was investigated by X-ray diffraction (XRD),scanning electron microscopy (SEM).TiO2 films deposited under atmosphere pressure show preferred orientation,and exhibit columnar-like structure,while TiO2 films deposited under low gas pressure show no preferred orientation.The columnar-like structure with preferred orientation exhibits higher photocatalytic efficiency,since the columnar structure has larger surface area.However,it contributes little to the improvement of hydrophilicity. DBD-CVD is an alternative method to prepare photocatalytic TiO2 for its well-controllable property.

  8. Seamount mineral deposits: A source of rare metals for high-technology industries

    Science.gov (United States)

    Hein, J.R.; Conrad, T.A.; Staudigel, H.

    2010-01-01

    The near exponential growth in Earth's population and the global economy puts increasing constraints on our planet's finite supply of natural metal resources, and, consequently, there is an increasing need for new sources to supply high-tech industries. To date, effectively all of our raw-metal resources are produced at land-based sites. Except for nearshore placer deposits, the marine environment has been largely excluded from metal mining due to technological difficulties, even though it covers more than 70% of the planet. The case can be made that deep-water seabed mining is inevitable in the future, owing to the critical and strategic metal needs for human society. In this paper, we evaluate the case that seamounts offer significant potential for mining. deposits can be formed in volcanic arc seamounts, no commercially viable deposits have yet been identified in the submarine environment. However, a substantial body of research suggests that hydrogenous Fe-Mn crusts may provide significant resources, especially for "high-tech metals" that are increasingly used in solar cells, computer chips, and hydrogen fuel cells.

  9. CVD 908, CVD 908-htrA, and CVD 909 live oral typhoid vaccines: a logical progression.

    Science.gov (United States)

    Tacket, Carol O; Levine, Myron M

    2007-07-15

    Typhoid fever remains an important public health problem in many parts of the world. Despite the availability of oral Ty21a (Vivotif; Berna Biotech) and parenteral Vi polysaccharide vaccine (Typhim Vi; Aventis Pasteur), improved typhoid fever vaccines have been sought. These include a series of vaccine candidates developed at the Center for Vaccine Development, University of Maryland, based on attenuation of Salmonella enterica serovar Typhi by deletions in the aroC, aroD, and htrA genes. These vaccine candidates, designated "CVD 908," "CVD 908-htrA," and "CVD 909," have been developed and tested in volunteers with variable success. This review summarizes the clinical data that directed the logical progression of this vaccine development strategy.

  10. Development of a direct feed fused deposition modelling technology for multi-material manufacturing

    Science.gov (United States)

    Zhou, Zuoxin; Salaoru, Iulia; Morris, Peter; Gibbons, Gregory J.

    2016-10-01

    Fused Deposition Modelling (FDM) is one of the most widely used Additive Manufacturing (AM) technologies to fabricate a three-dimensional (3D) object via melt processing of a thermoplastic filament. However, it is limited in the variety of materials that can be fed and mixed during the process. In this study, a concept of direct feed FDM technology was presented, which allowed co-feeding of multiple materials in any available form. Different materials were mixed at predetermined ratios and deposited together to form a 3D object with variable properties and functionalities that meet specific requirements. To demonstrate the capability of this AM system, heat-sensitive polyvinyl alcohol (PVOH) and its additives were processed. A geometry with various features was successfully manufactured with dimensions closely matching those of the design specification. The FDM processed PVOH showed insignificant thermal decomposition as it retained its original colour, flexibility, and water solubility. During the process, a fluorescent whitening agent was successfully incorporated into the polymer melt. Therefore, the printed sample exhibited a strong fluorescence effect from the UV-visible and fluorimeter results.

  11. 3D Printing of Biocompatible Acellular Auricular Implant Using Dual Scaled Hydrid Technology Combining Fused Deposition Modeling with Electrospinning

    OpenAIRE

    Rezenda, R; Sabado, M; Kasjanovs, V; Baptista, L.; da Silva, K; Noritomi, P; Sena, F.; Wen, X.; Da Silva, J; Mironov, V.

    2013-01-01

    The dual-scaled hydrid scaffold fabrication technology based on combination of 3D printing (fused deposition modeling) and electrospining have been recently introduced. We report here the design, fabrication, mechanical testing, in vitro and in vivo biocompatibility testing of novel auricular implants for treatment microtia fabricated by dual scaled hydbrid scaffold fabrication technology.

  12. Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

    Science.gov (United States)

    Banszerus, Luca; Schmitz, Michael; Engels, Stephan; Dauber, Jan; Oellers, Martin; Haupt, Federica; Watanabe, Kenji; Taniguchi, Takashi; Beschoten, Bernd; Stampfer, Christoph

    2015-01-01

    Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm2 V–1 s–1, thus rivaling exfoliated graphene. PMID:26601221

  13. High-temperature CVD for crystalline-silicon thin-film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Faller, F.R.; Hurrle, A.

    1999-10-01

    The fundamentals of thermal CVD for the deposition of silicon at high temperatures are briefly discussed and applied to the conditions in the CVD system that the authors have constructed and characterized. The system fulfills basic requirements to be met for solar cell application; solar cells made from epitaxial layers on various substrates were fabricated. The high-quality cells achieved 17.6% efficiency proving the excellent performance of the system, the cells on economically relevant substrates achieved 8% efficiency which still needs improvement.

  14. Electrical phase change of CVD-grown Ge-Sb-Te thin film device

    OpenAIRE

    Huang, C.C.; B. Gholipour; Ou, J.Y.; Knight, K.J.; Hewak, D. W.

    2011-01-01

    A prototype Ge-Sb-Te thin film phase-change memory device has been fabricated and reversible threshold and phase change switching demonstrated electrically, with a threshold voltage of 1.5 – 1.7 V. The Ge-Sb-Te thin film was fabricated by chemical vapour deposition (CVD) at atmospheric pressure using GeCl4, SbCl5, and Te precursors with reactive gas H2 at reaction temperature 780 °C and substrate temperature 250 °C. The surface morphology and composition of the CVD-grown Ge-Sb-Te thin film ha...

  15. Aligned carbon nanotubes catalytically grown on iron-based nanoparticles obtained by laser-induced CVD

    OpenAIRE

    Le Normand, Francois; Cojocaru, Costel Sorin; Ersen, Ovidiu; Legagneux, Pierre; Gangloff, Laurent; Fleaca, C.; Alexandrescu, Rodica; Dumitrache, Florin; Morjan, Ion

    2007-01-01

    International audience; Iron-based nanoparticles are prepared by a laser-induced chemical vapor deposition (CVD) process. They are characterized as body-centered Fe and Fe2O3 (maghemite/magnetite) particles with sizes ::;5 and 10 nm, respectively. The Fe particles are embedded in a protective carbon matrix. Both kind of particles are dispersed by spin-coating on SiO2/Si(1 0 0) flat substrates. They are used as catalyst to grow carbon nanotubes by a plasma- and filaments-assisted catalytic CVD...

  16. Knowledge of risk factors for diabetes or cardiovascular disease (CVD) is poor among individuals with risk factors for CVD.

    Science.gov (United States)

    Kilkenny, Monique F; Dunstan, Libby; Busingye, Doreen; Purvis, Tara; Reyneke, Megan; Orgill, Mary; Cadilhac, Dominique A

    2017-01-01

    There is limited evidence on whether having pre-existing cardiovascular disease (CVD) or risk factors for CVD such as diabetes, ensures greater knowledge of risk factors important for motivating preventative behaviours. Our objective was to compare knowledge among the Australian public participating in a health check program and their risk status. Data from the Stroke Foundation 'Know your numbers' program were used. Staff in community pharmacies provided opportunistic health checks (measurement of blood pressure and diabetes risk assessment) among their customers. Participants were categorised: 1) CVD ± risk of CVD: history of stroke, heart disease or kidney disease, and may have risk factors; 2) risk of CVD only: reported having high blood pressure, high cholesterol, diabetes or atrial fibrillation; and 3) CVD risk free (no CVD or risk of CVD). Multivariable logistic regression analyses were performed including adjustment for age and sex. Among 4,647 participants, 12% had CVD (55% male, 85% aged 55+ years), 47% were at risk of CVD (40% male, 72% 55+ years) and 41% were CVD risk free (33% male, 27% 55+ years). Participants with CVD (OR: 0.66; 95% CI: 0.55, 0.80) or risk factors for CVD (OR: 0.65; 95% CI: 0.57, 0.73) had poorer knowledge of the risk factors for diabetes/CVD compared to those who were CVD risk free. After adjustment, only participants with risk factors for CVD (OR: 0.80; 95% CI: 0.69, 0.93) had poorer knowledge. Older participants (55+ years) and men had poorer knowledge of diabetes/CVD risk factors and complications of diabetes. Participants with poorer knowledge of risk factors were older, more often male or were at risk of developing CVD compared with those who were CVD risk free. Health education in these high risk groups should be a priority, as diabetes and CVD are increasing in prevalence throughout the world.

  17. The Charge Collection Properties of CVD Diamond

    CERN Document Server

    Behnke, T; Oh, A; Steuerer, J; Wagner, A; Zeuner, W; Behnke, Ties; Hüntemeyer, Petra; Oh, Alexander; Steuerer, Johannes; Wagner, Albrecht; Zeuner, Wolfram

    1998-01-01

    The charge collection properties of CVD diamond have been investigated with ionising radiation. In this study two CVD diamond samples, prepared with electrical contacts have been used as solid state ionisation chambers. The diamonds have been studied with beta particles and 10 keV photons, providing a homogeneous ionisation density and with protons and alpha particles which are absorbed in a thin surface layer. For the latter case a strong decrease of the signal as function of time is observed, which is attributed to polarisation effects inside the diamond. Spatially resolved measurements with protons show a large variation of the charge collection efficiency, whereas for photons and minimum ionising particles the response is much more uniform and in the order of 18%. These results indicate that the applicability of CVD diamond as a position sensitive particle detector depends on the ionisation type and appears to be promising for homogeneous ionisation densities as provided by relativistic charged particles.

  18. Substrate Strengthening of CVD Coated Steels

    Institute of Scientific and Technical Information of China (English)

    O.Kessler; M.Heidkamp; F.Hoffmann; P.Mayr

    2004-01-01

    Properties of components and tools can be improved by the combination of coating and heat treatment processes due to the addition of single process advantages and due to the utilization of process interactions. Several low and high alloyed, structural and tool steels (AISI 4140, 52100, H13, A2, D2, etc.) have been treated by CVD-TiN-coating plus laser beam hardening respectively carburizing plus CVD-TiN-coating. Homogeneous, dense TiN-coatings with high hardness,high compressive residual stresses and good adhesion were supported by high strength substrate surfaces. Especially CVD plus laser beam hardening offers the possibility to reduce distortion due to the small heated surface volume.

  19. Strain Release Induced Novel Fluorescence Variation in CVD-Grown Monolayer WS2 Crystals.

    Science.gov (United States)

    Feng, Shanghuai; Yang, Ruilong; Jia, Zhiyan; Xiang, Jianyong; Wen, Fusheng; Mu, Congpu; Nie, Anmin; Zhao, Zhisheng; Xu, Bo; Tao, Chenggang; Tian, Yongjun; Liu, Zhongyuan

    2017-10-04

    Tensile strain is intrinsic to monolayer crystals of transition metal disulfides such as Mo(W)S2 grown on oxidized silicon substrates by chemical vapor deposition (CVD) owing to the much larger thermal expansion coefficient of Mo(W)S2 than that of silica. Here we report fascinating fluorescent variation in intensity with aging time in CVD-grown triangular monolayer WS2 crystals on SiO2 (300 nm)/Si substrates and formation of interesting concentric triangular fluorescence patterns in monolayer crystals of large size. The novel fluorescence aging behavior is recognized to be induced by the partial release of intrinsic tensile strain after CVD growth and the induced localized variations or gradients of strain in the monolayer crystals. The results demonstrate that strain has a dramatic impact on the fluorescence and photoluminescence of monolayer WS2 crystals and thus could potentially be utilized to tune electronic and optoelectronic properties of monolayer transition metal disulfides.

  20. Response of CVD Diamond Detectors to 14 MeV Neutrons

    CERN Document Server

    Weiss, C; Gagnon-Moisan, F; Kasper, A; Lucke, A; Schuhmacher, H; Weierganz, M; Zimba, A

    2012-01-01

    A series of measurements was taken at the Physikalisch-Technische Bundesanstalt (PTB) Braunschweig [1] using the 14 MeV neutron beam at the Van der Graaf accelerator with chemical vapor deposition (CVD) diamond detectors, in preparation of an upcoming (n, ) cross-section measurement [2] at the CERN-n TOF experiment [3, 4]. A single-crystal (sCVD) as well as a poly-crystalline (pCVD) diamond detector were used for the measurements. The response of both materials to the mono-energetic neutron beam was studied, also with the prospect for future applications in plasma diagnostics for fusion research. The results of the measurements are presented in this report.

  1. Relationship between texture and residual macro-strain in CVD diamond films based on phenomenological analysis

    Institute of Scientific and Technical Information of China (English)

    Weimin Mao; Hongxi Zhu; Leng Chen; Huiping Feng

    2008-01-01

    The relationship between texture and elastic properties of chemical vapor deposition (CVD) diamond films was analyzed based on the phenomenological theory, which reveals the influence of crystalline orientation and texture on the residual macro-strain and macro-stress. The phenomenological calculations indicated that the difference in Young's modulus could be 15% in single dia- mond crystals and 5% in diamond films with homogeneously distributed strong fiber texture. The experimentally measured residual strains of free-standing CVD diamond films were in good agreement with the correspondingly calculated Young's modulus in con- nection with the multi-fiber textures in the fills, though the difference in Young's modulus induced by texture was only around 1%. It is believed that texture should be one of the important factors influencing the residual stress and strain of CVD diamond films.

  2. Friction Properties of Polished Cvd Diamond Films Sliding against Different Metals

    Science.gov (United States)

    Lin, Zichao; Sun, Fanghong; Shen, Bin

    2016-11-01

    Owing to their excellent mechanical and tribological properties, like the well-known extreme hardness, low coefficient of friction and high chemical inertness, chemical vapor deposition (CVD) diamond films have found applications as a hard coating for drawing dies. The surface roughness of the diamond films is one of the most important attributes to the drawing dies. In this paper, the effects of different surface roughnesses on the friction properties of diamond films have been experimentally studied. Diamond films were fabricated using hot filament CVD. The WC-Co (Co 6wt.%) drawing dies were used as substrates. A gas mixture of acetone and hydrogen gas was used as the feedstock gas. The CVD diamond films were polished using mechanical polishing. Polished diamond films with three different surface roughnesses, as well as the unpolished diamond film, were fabricated in order to study the tribological performance between the CVD diamond films and different metals with oil lubrication. The unpolished and polished CVD diamond films are characterized with scanning electron microscope (SEM), atomic force microscope (AFM), surface profilometer, Raman spectrum and X-ray diffraction (XRD). The friction examinations were carried out by using a ball-on-plate type reciprocating friction tester. Low carbide steel, stainless steel, copper and aluminum materials were used as counterpart balls. Based on this study, the results presented the friction coefficients between the polished CVD films and different metals. The friction tests demonstrate that the smooth surface finish of CVD diamond films is beneficial for reducing their friction coefficients. The diamond films exhibit low friction coefficients when slid against the stainless steel balls and low carbide steel ball, lower than that slid against copper ball and aluminum ball, attributed to the higher ductility of copper and aluminum causing larger amount of wear debris adhering to the sliding interface and higher adhesive

  3. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

    Science.gov (United States)

    Biyikli, Necmi; Haider, Ali

    2017-09-01

    In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

  4. FY1995 development of a clean CVD process by evaluation and control of gas phase nucleation phenomena; 1995 nendo kisokaku seisei gensho no hyoka to seigyo ni yoru clean CVD process no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The purpose of this study is to develop a high-rate and clean chemical vapor deposition (CVD) process as a breakthrough technique to overcome the problems that particles generated in the gas phase during CVD process for preparation of functional thin films cause reduced product yield and deterioration of the films. In the CVD process proposed here, reactant gas and generated particles are electrically charged to control the motion of them with an electric field. In this study, gas-phase nucleation phenomena are evaluated both theoretically and experimentally. A high-rate, ionized CVD method is first developed, in which reactant gas and generated particles are charged with negative ions generated from a radioisotope source and the UV/photoelectron method, and the motion of the charged gas and particles is controlled with an electric field. Charging and transport processes of fine particles are then investigated experimentally and theoretically to develop a clean CVD method in which generated particles are removed with the electric forces. As a result, quantitative evaluation of the charging and transport process was made possible. We also developed devices for measuring the size distribution and concentration of fine particles in low pressure gas such as those found in plasma CVD processes. In addition, numerical simulation and experiments in this study for a TEOS/O{sub 3} CVD process to prepare thin films could determine reaction rates which have not been known so far and give information on selecting good operation conditions for the process. (NEDO)

  5. Lead-Free Piezoelectric Diaphragm Biosensors Based on Micro-Machining Technology and Chemical Solution Deposition

    Directory of Open Access Journals (Sweden)

    Xiaomeng Li

    2016-01-01

    Full Text Available In this paper, we present a new approach to the fabrication of integrated silicon-based piezoelectric diaphragm-type biosensors by using sodium potassium niobate-silver niobate (0.82KNN-0.18AN composite lead-free thin film as the piezoelectric layer. The piezoelectric diaphragms were designed and fabricated by micro-machining technology and chemical solution deposition. The fabricated device was very sensitive to the mass changes caused by various targets attached on the surface of diaphragm. The measured mass sensitivity value was about 931 Hz/μg. Its good performance shows that the piezoelectric diaphragm biosensor can be used as a cost-effective platform for nucleic acid testing.

  6. Seamount mineral deposits--A source of rare metals for high technology industries

    Science.gov (United States)

    Hein, James R.; Conrad, Tracey A.; Staudigel, Hubert

    2010-01-01

    The near exponential growth in Earth’s population and the global economy puts increasing constraints on our planet’s finite supply of natural metal resources, and, consequently, there is an increasing need for new sources to supply high-tech industries. To date, effectively all of our raw-metal resources are produced at land-based sites. Except for nearshore placer deposits, the marine environment has been largely excluded from metal mining due to technological difficulties, even though it covers more than 70% of the planet. The case can be made that deep-water seabed mining is inevitable in the future, owing to the critical and strategic metal needs for human society. In this paper, we evaluate the case that seamounts offer significant potential for mining.

  7. Lead-Free Piezoelectric Diaphragm Biosensors Based on Micro-Machining Technology and Chemical Solution Deposition.

    Science.gov (United States)

    Li, Xiaomeng; Wu, Xiaoqing; Shi, Peng; Ye, Zuo-Guang

    2016-01-12

    In this paper, we present a new approach to the fabrication of integrated silicon-based piezoelectric diaphragm-type biosensors by using sodium potassium niobate-silver niobate (0.82KNN-0.18AN) composite lead-free thin film as the piezoelectric layer. The piezoelectric diaphragms were designed and fabricated by micro-machining technology and chemical solution deposition. The fabricated device was very sensitive to the mass changes caused by various targets attached on the surface of diaphragm. The measured mass sensitivity value was about 931 Hz/μg. Its good performance shows that the piezoelectric diaphragm biosensor can be used as a cost-effective platform for nucleic acid testing.

  8. A Study on Reactive Spray Deposition Technology Processing Parameters in the Context of Pt Nanoparticle Formation

    Science.gov (United States)

    Roller, Justin M.; Maric, Radenka

    2015-12-01

    Catalytic materials are complex systems in which achieving the desired properties (i.e., activity, selectivity and stability) depends on exploiting the many degrees of freedom in surface and bulk composition, geometry, and defects. Flame aerosol synthesis is a process for producing nanoparticles with ample processing parameter space to tune the desired properties. Flame dynamics inside the reactor are determined by the input process variables such as solubility of precursor in the fuel; solvent boiling point; reactant flow rate and concentration; flow rates of air, fuel and the carrier gas; and the burner geometry. In this study, the processing parameters for reactive spray deposition technology, a flame-based synthesis method, are systematically evaluated to understand the residence times, reactant mixing, and temperature profiles of flames used in the synthesis of Pt nanoparticles. This provides a framework for further study and modeling. The flame temperature and length are also studied as a function of O2 and fuel flow rates.

  9. Thermodynamic study of CVD-ZrO{sub 2} phase diagrams

    Energy Technology Data Exchange (ETDEWEB)

    Torres-Huerta, A.M., E-mail: atorresh@ipn.m [Research Center for Applied Science and Advanced Technology, Altamira-IPN, Altamira C.P.89600 Tamaulipas (Mexico); Vargas-Garcia, J.R. [Dept of Metallurgical Eng., ESIQIE-IPN, Mexico 07300 D.F. (Mexico); Dominguez-Crespo, M.A. [Research Center for Applied Science and Advanced Technology, Altamira-IPN, Altamira C.P.89600 Tamaulipas (Mexico); Romero-Serrano, J.A. [Dept of Metallurgical Eng., ESIQIE-IPN, Mexico 07300 D.F. (Mexico)

    2009-08-26

    Chemical vapor deposition (CVD) of zirconium oxide (ZrO{sub 2}) from zirconium acetylacetonate Zr(acac){sub 4} has been thermodynamically investigated using the Gibbs' free energy minimization method and the FACTSAGE program. Thermodynamic data Cp{sup o}, DELTAH{sup o} and S{sup o} for Zr(acac){sub 4} have been estimated using the Meghreblian-Crawford-Parr and Benson methods because they are not available in the literature. The effect of deposition parameters, such as temperature and pressure, on the extension of the region where pure ZrO{sub 2} can be deposited was analyzed. The results are presented as calculated CVD stability diagrams. The phase diagrams showed two zones, one of them corresponds to pure monoclinic phase of ZrO{sub 2} and the other one corresponds to a mix of monoclinic phase of ZrO{sub 2} and graphite carbon.

  10. New ion-assisted filtered cathodic arc deposition (IFCAD) technology for producing advanced thin films on temperature-sensitive substrates

    Science.gov (United States)

    Fulton, Michael L.

    1999-10-01

    An innovative Ion-Assisted Filtered Cathodic Arc Deposition (IFCAD) system has been developed for low temperature production of thin-film coatings. The IFCAD system employs electro-magnetic and mechanical filtering techniques to remove unwanted macroparticles and neutral atoms from the plasma stream. Therefore, only ions within a defined energy range arrive at the substrate surface, depositing thin-films with excellent mechanical and optical properties. Ion- Assisted-Deposition is coupled with Filtered Cathodic Arc technology to enhance and modify the arc deposited thin- films. Using an advanced computer controlled plasma beam scanning system, high quality, large area, uniform IFCAD multi-layer film structures are attained. Amorphous Diamond- Like-Carbon films (up to 85% sp3 bonded carbon; and micro- hardness greater than 50 GPa) have been deposited in multi- layer thin-film combinations with other IFCAD source materials (such as: Al2O3) for optical and tribological applications. Rutile TiO2 (refractive index of 2.8 at 500 nm) has been deposited with this technology for advanced optical filter applications. The new IFCAD technology has been included in development programs, such as: plastic and glass lens coatings for optical systems; wear resistant coatings on various metal substrates, ultra smooth, durable, surface hydrophobic coatings for aircraft windows; EUV coatings for space instrumentation; transparent conductive coatings; and UV protective coatings for solar cell concentrator plastic Fresnel lens elements for space power.

  11. Epitaxial nucleation of CVD bilayer graphene on copper.

    Science.gov (United States)

    Song, Yenan; Zhuang, Jianing; Song, Meng; Yin, Shaoqian; Cheng, Yu; Zhang, Xuewei; Wang, Miao; Xiang, Rong; Xia, Yang; Maruyama, Shigeo; Zhao, Pei; Ding, Feng; Wang, Hongtao

    2016-12-08

    Bilayer graphene (BLG) has emerged as a promising candidate for next-generation electronic applications, especially when it exists in the Bernal-stacked form, but its large-scale production remains a challenge. Here we present an experimental and first-principles calculation study of the epitaxial chemical vapor deposition (CVD) nucleation process for Bernal-stacked BLG growth on Cu using ethanol as a precursor. Results show that a carefully adjusted flow rate of ethanol can yield a uniform BLG film with a surface coverage of nearly 90% and a Bernal-stacking ratio of nearly 100% on ordinary flat Cu substrates, and its epitaxial nucleation of the second layer is mainly due to the active CH3 radicals with the presence of a monolayer-graphene-covered Cu surface. We believe that this nucleation mechanism will help clarify the formation of BLG by the epitaxial CVD process, and lead to many new strategies for scalable synthesis of graphene with more controllable structures and numbers of layers.

  12. Oxide Dispersion Strengthened Iron Aluminide by CVD Coated Powders

    Energy Technology Data Exchange (ETDEWEB)

    Asit Biswas Andrew J. Sherman

    2006-09-25

    This I &I Category2 program developed chemical vapor deposition (CVD) of iron, aluminum and aluminum oxide coated iron powders and the availability of high temperature oxidation, corrosion and erosion resistant coating for future power generation equipment and can be used for retrofitting existing fossil-fired power plant equipment. This coating will provide enhanced life and performance of Coal-Fired Boilers components such as fire side corrosion on the outer diameter (OD) of the water wall and superheater tubing as well as on the inner diameter (ID) and OD of larger diameter headers. The program also developed a manufacturing route for readily available thermal spray powders for iron aluminide coating and fabrication of net shape component by powder metallurgy route using this CVD coated powders. This coating can also be applid on jet engine compressor blade and housing, industrial heat treating furnace fixtures, magnetic electronic parts, heating element, piping and tubing for fossil energy application and automotive application, chemical processing equipment , heat exchanger, and structural member of aircraft. The program also resulted in developing a new fabrication route of thermal spray coating and oxide dispersion strengthened (ODS) iron aluminide composites enabling more precise control over material microstructures.

  13. Organic solar cells using CVD-grown graphene electrodes

    Science.gov (United States)

    Kim, Hobeom; Bae, Sang-Hoon; Han, Tae-Hee; Lim, Kyung-Geun; Ahn, Jong-Hyun; Lee, Tae-Woo

    2014-01-01

    We report on the development of flexible organic solar cells (OSCs) incorporating graphene sheets synthesized by chemical vapor deposition (CVD) as transparent conducting electrodes on polyethylene terephthalate (PET) substrates. A key barrier that must be overcome for the successful fabrication of OSCs with graphene electrodes is the poor-film properties of water-based poly(3,4-ethylenedioxythiphene):poly(styrenesulfonate) (PEDOT:PSS) when coated onto hydrophobic graphene surfaces. To form a uniform PEDOT:PSS film on a graphene surface, we added perfluorinated ionomers (PFI) to pristine PEDOT:PSS to create ‘GraHEL’, which we then successfully spin coated onto the graphene surface. We systematically investigated the effect of number of layers in layer-by-layer stacked graphene anode of an OSC on the performance parameters including the open-circuit voltage (Voc), short-circuit current (Jsc), and fill factor (FF). As the number of graphene layers increased, the FF tended to increase owing to lower sheet resistance, while Jsc tended to decrease owing to the lower light absorption. In light of this trade-off between sheet resistance and transmittance, we determined that three-layer graphene (3LG) represents the best configuration for obtaining the optimal power conversion efficiency (PCE) in OSC anodes, even at suboptimal sheet resistances. We finally developed efficient, flexible OSCs with a PCE of 4.33%, which is the highest efficiency attained so far by an OSC with CVD-grown graphene electrodes to the best of our knowledge.

  14. CVD Rhenium Engines for Solar-Thermal Propulsion Systems

    Science.gov (United States)

    Williams, Brian E.; Fortini, Arthur J.; Tuffias, Robert H.; Duffy, Andrew J.; Tucker, Stephen P.

    1999-01-01

    Solar-thermal upper-stage propulsion systems have the potential to provide specific impulse approaching 900 seconds, with 760 seconds already demonstrated in ground testing. Such performance levels offer a 100% increase in payload capability compared to state-of-the-art chemical upper-stage systems, at lower cost. Although alternatives such as electric propulsion offer even greater performance, the 6- to 18- month orbital transfer time is a far greater deviation from the state of the art than the one to two months required for solar propulsion. Rhenium metal is the only material that is capable of withstanding the predicted thermal, mechanical, and chemical environment of a solar-thermal propulsion device. Chemical vapor deposition (CVD) is the most well-established and cost-effective process for the fabrication of complex rhenium structures. CVD rhenium engines have been successfully constructed for the Air Force ISUS program (bimodal thrust/electricity) and the NASA Shooting Star program (thrust only), as well as under an Air Force SBIR project (thrust only). The bimodal engine represents a more long-term and versatile approach to solar-thermal propulsion, while the thrust-only engines provide a potentially lower weight/lower cost and more near-term replacement for current upper-stage propulsion systems.

  15. CVD-graphene growth on different polycrystalline transition metals

    Directory of Open Access Journals (Sweden)

    M. P. Lavin-Lopez

    2017-01-01

    Full Text Available The chemical vapor deposition (CVD graphene growth on two polycrystalline transition metals (Ni and Cu was investigated in detail using Raman spectroscopy and optical microscopy as a way to synthesize graphene of the highest quality (i.e. uniform growth of monolayer graphene, which is considered a key issue for electronic devices. Key CVD process parameters (reaction temperature, CH4/H2flow rate ratio, total flow of gases (CH4+H2, reaction time were optimized for both metals in order to obtain the highest graphene uniformity and quality. The conclusions previously reported in literature about the performance of low and high carbon solubility metals in the synthesis of graphene and their associated reaction mechanisms, i.e. surface depositionand precipitation on cooling, respectively, was not corroborated by the results obtained in this work. Under the optimal reaction conditions, a large percentage of monolayer graphene was obtained over the Ni foil since the carbon saturation was not complete, allowing carbon atoms to be stored in the bulk metal, which could diffuse forming high quality monolayer graphene at the surface. However, under the optimal reaction conditions, the formation of a non-uniform mixture of few layers and multilayer graphene on the Cu foil was related to the presence of an excess of active carbon atoms on the Cu surface.

  16. Can surface preparation with CVD diamond tip influence on bonding to dental tissues?

    Science.gov (United States)

    Aparecido Kawaguchi, Fernando; Brossi Botta, Sergio; Nilo Vieira, Samuel; Steagall Júnior, Washington; Bona Matos, Adriana

    2008-04-01

    This study evaluated the influence of chemical vapor deposition (CVD) tips surface treatments of enamel and dentin on bonding resistance of two adhesive systems. Thirty embedded samples were divided in 12 groups ( n = 10), according to factors: substrate (enamel and dentin), adhesive system [etch-and-rinse (SB) and self-etch]; and the surface treatments (paper discs, impact CVD tips and tangential CVD tip). When CVD tip was used in the impact mode the tip was applied perpendicular to dental surface, while at tangential mode, the tip worked parallel to dental surface. Specimens were tested in tension after 24 h at 0.5 mm/min of cross-head speed. ANOVA results, in MPa showed that in enamel, only adhesive system factor was statistically significant ( p = 0.015) under tested conditions, with higher bond strength observed for SB groups. However, in dentin the best bonding performance was obtained in SE groups ( p = 0.00). In both tested substrates, results did not show statistically significant difference for factors treatment and its interactions. ConclusionsIt may be concluded that CVD-tip surface treatment, in both tested modes, did not influence on adhesion to enamel and dentin. But, it is important to choose adhesive system according to the tissue available to bonding.

  17. CVD diamond pixel detectors for LHC experiments

    Energy Technology Data Exchange (ETDEWEB)

    Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J.C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N

    1999-08-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

  18. Finite Element Analysis Modeling of Chemical Vapor Deposition of Silicon Carbide

    Science.gov (United States)

    2014-06-19

    Engineering Physics Graduate School of Engineering and Management Air Force Institute of Technology Air University Air Education and Training...deposited by chemical reaction of gas-phase precursors. Chemical reactions, often endothermic , occur in the gas phase as well as on the surfaces in the...rates in CVD are temperature dependent and are endothermic , changing the temperature of the system further [29]. The beauty of the Heat Equation is

  19. Sol-gel-CVD组合技术制备纳米复合膜自洁净玻璃的研究%Composite technology of sol - gel - CVD for preparation of self- cleaning glass with nano - composite film

    Institute of Scientific and Technical Information of China (English)

    张敬畅; 胡博; 曹维良

    2005-01-01

    采用溶胶-凝胶法(sol-gel)、化学气相沉积法(CVD)法及sol-gel-CVD组合技术制备自洁净玻璃,对光降解膜的化学组分进行了优化,通过以甲基橙为降解物对光催化性能进行考察,测试了其浸润角、膜厚,采用SEM技术对表面结构进行了表征,并对sol-gel,CVD以及sol-gel-CVD的组合技术3种方法进行比较.结果表明,采用sol-gel-CVD的组合技术制得Ti-Ce膜的洁净玻璃表面致密性最好,具有很好的亲水性,光催化性能最高,1.5 h时的降解率最好达到96.2%.

  20. The Effect of Excess Carbon on the Crystallographic, Microstructural, and Mechanical Properties of CVD Silicon Carbide Fibers

    Energy Technology Data Exchange (ETDEWEB)

    Marzik, J V; Croft, W J; Staples, R J; MoberlyChan, W J

    2006-12-05

    Silicon carbide (SiC) fibers made by chemical vapor deposition (CVD) are of interest for organic, ceramic, and metal matrix composite materials due their high strength, high elastic modulus, and retention of mechanical properties at elevated processing and operating temperatures. The properties of SCS-6{trademark} silicon carbide fibers, which are made by a commercial process and consist largely of stoichiometric SiC, were compared with an experimental carbon-rich CVD SiC fiber, to which excess carbon was added during the CVD process. The concentration, homogeneity, and distribution of carbon were measured using energy dispersive x-ray spectroscopy (SEM/EDS). The effect of excess carbon on the tensile strength, elastic modulus, and the crystallographic and microstructural properties of CVD silicon carbide fibers was investigated using tensile testing, x-ray diffraction, scanning electron microscopy (SEM), and transmission electron microscopy (TEM).

  1. CVD Lu(2)O(3):Eu coatings For Advanced Scintillators.

    Science.gov (United States)

    Topping, Stephen G; Sarin, V K

    2009-03-01

    Currently Lu(2)O(3):Eu(3+) scintillators can only be fabricated via hot-pressing and pixelization, which is commercially not viable, thus restricting their use. Chemical vapor deposition is being developed as an alternative manufacturing process. Columnar coatings of Lu(2)O(3):Eu(3+) have been achieved using the halide-CO(2)-H(2) system, clearly signifying feasibility of the CVD process. Characterization of the coatings using high resolution scanning electron microscopy (SEM) and x-ray diffraction (XRD) analysis have been used as an aid to optimize process parameters and attain highly oriented and engineered coating structures. These results have clearly demonstrated that this process can be successfully used to tailor sub-micron columnar growth of Lu(2)O(3):Eu(3+), with the potential of ultra high resolution x-ray imaging.

  2. CVD synthesis of carbon-based metallic photonic crystals

    CERN Document Server

    Zakhidov, A A; Baughman, R H; Iqbal, Z

    1999-01-01

    Three-dimensionally periodic nanostructures on the scale of hundreds of nanometers, known as photonic crystals, are attracting increasing interest because of a number of exciting predicted properties. In particular, interesting behavior should be obtainable for carbon- based structures having a dimensional scale larger than fullerenes and nanotubes, but smaller than graphitic microfibers. We show here how templating of porous opals by chemical vapor deposition (CVD) allows us to obtain novel types of graphitic nanostructures. We describe the synthesis of new cubic forms of carbon having extended covalent connectivity in three dimensions, which provide high electrical conductivity and unit cell dimensions comparable to optical wavelengths. Such materials are metallic photonic crystals that show intense Bragg diffraction. (14 refs).

  3. Towards a general growth model for graphene CVD on transition metal catalysts

    Science.gov (United States)

    Cabrero-Vilatela, Andrea; Weatherup, Robert S.; Braeuninger-Weimer, Philipp; Caneva, Sabina; Hofmann, Stephan

    2016-01-01

    The chemical vapour deposition (CVD) of graphene on three polycrystalline transition metal catalysts, Co, Ni and Cu, is systematically compared and a first-order growth model is proposed which can serve as a reference to optimize graphene growth on any elemental or alloy catalyst system. Simple thermodynamic considerations of carbon solubility are insufficient to capture even basic growth behaviour on these most commonly used catalyst materials, and it is shown that kinetic aspects such as carbon permeation have to be taken into account. Key CVD process parameters are discussed in this context and the results are anticipated to be highly useful for the design of future strategies for integrated graphene manufacture.The chemical vapour deposition (CVD) of graphene on three polycrystalline transition metal catalysts, Co, Ni and Cu, is systematically compared and a first-order growth model is proposed which can serve as a reference to optimize graphene growth on any elemental or alloy catalyst system. Simple thermodynamic considerations of carbon solubility are insufficient to capture even basic growth behaviour on these most commonly used catalyst materials, and it is shown that kinetic aspects such as carbon permeation have to be taken into account. Key CVD process parameters are discussed in this context and the results are anticipated to be highly useful for the design of future strategies for integrated graphene manufacture. Electronic supplementary information (ESI) available: Fig. S1. See DOI: 10.1039/c5nr06873h

  4. Superhydrophobic aluminium-based surfaces: Wetting and wear properties of different CVD-generated coating types

    Science.gov (United States)

    Thieme, M.; Streller, F.; Simon, F.; Frenzel, R.; White, A. J.

    2013-10-01

    In view of generating superhydrophobic aluminium-based surfaces, this work presents further results for the combination of anodic oxidation as the primary pretreatment method and chemical vapour deposition (CVD) variants for chemical modification producing coatings of 250-1000 nm thickness. In detail, CVD involved the utilisation of i - hexafluoropropylene oxide as precursor within the hot filament CVD process for the deposition of poly(tetrafluoroethylene) coatings at alternative conditions (PTFE-AC) and ii - 1,3,5-trivinyltrimethylcyclotrisiloxane for the deposition of polysiloxane coatings (PSi) by initiated CVD. The substrate material was Al Mg1 subjected to usual or intensified sulphuric acid anodisation pretreatments (SAAu, SAAi, respectively) affording various degrees of surface micro-roughness (SAAu weathering and/or mild wear testing. Superhydrophobicity (SH) was observed with the system SAAi + PTFE-AC similarly to former findings with the standard hot filament CVD PTFE coating variant (SAAi + PTFE-SC). The results indicated that the specific coating morphology made an important contribution to the water-repellency, because even some of the SAAu-based samples tended to reveal SH. Subjecting samples to weathering treatment resulted in a general worsening of the wetting behaviour, primarily limited to the receding contact angles. These tendencies were correlated with the chemical composition of the sample surfaces as analysed by X-ray photoelectron spectroscopy. The wear tests showed, as evaluated by scanning electron microscopy and contact angle measurement, that the PTFE coatings were relatively sensitive to friction. This was connected with a dramatic deterioration of the water-repelling properties. PSi-coated surfaces generally showed rather poor water-repellency, but this coating type was surprisingly resistant towards the applied friction test. From these findings it may be concluded that the combination of hydrophobic fluorine containing structure

  5. Oxidation Resistance of Turbine Blades Made of ŻS6K Superalloy after Aluminizing by Low-Activity CVD and VPA Methods

    Science.gov (United States)

    Zagula-Yavorska, M.; Kocurek, P.; Pytel, M.; Sieniawski, J.

    2016-05-01

    Two aluminide layers (additive and interdiffusion) were deposited on a turbine blade made of ŻS6K superalloy by means of VPA and CVD methods. The additive and interdiffusion layers obtained by the VPA method consist of the NiAl phase and some carbides, while the additive layer deposited by the CVD method consists of the NiAl phase only. The residual stresses in the aluminide coating at the lock, suction side, and pressure side of the blade were tensile. The aluminide coating deposited by the CVD method has an oxidation resistance about 7 times better than that deposited by the VPA method. Al2O3 + HfO2 + NiAl2O4 phases were revealed on the surface of the aluminide coating deposited by the VPA method after 240 h oxidation. Al2O3 + TiO2 oxides were found on the surface of the aluminide coating deposited by the CVD method after 240 h oxidation. Increasing the time of oxidation from 240 to 720 h led to the formation of the NiO oxide on the surface of the coating deposited by the VPA method. Al2O3 oxide is still visible on the surface of the coating deposited by the CVD method. The residual stresses in the aluminide coating after 30 cycles of oxidation at the lock, suction side and pressure side of the turbine blade are compressive.

  6. Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

    Science.gov (United States)

    Arezki, Hakim; Boutchich, Mohamed; Alamarguy, David; Madouri, Ali; Alvarez, José; Cabarrocas, Pere Roca i.; Kleider, Jean-Paul; Yao, Fei; Lee, Young Hee

    2016-10-01

    Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n- or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq-1 to 1260 Ω sq-1 for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm2 V-1 s-1 indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications.

  7. Review of cathodic arc deposition technology at the start of the new millennium

    Energy Technology Data Exchange (ETDEWEB)

    Sanders, D M; Anders, A

    2000-02-24

    The vacuum cathodic arc has been known to provide a means of producing coatings since the second half of the 19th century. This makes it one of the oldest known means for making coatings in a vacuum. In the last century it has been recognized that the copious quantities of ions produced by the process offers certain advantages in terms of coating properties. Specifically, ions can be steered and/or accelerated toward the parts to be coated. This, in turn, can provide enhanced adhesion, film density, and composition stoichiometry in the case of compound coatings. The ions generated by the cathodic arc have high ''natural'' kinetic energy values in the range 20-200 eV, leading to enhanced surface mobility during the deposition process and even ion subplantation. In many cases, dense coatings are achieved even when non-normal arrival angles are involved. The ion energy can further manipulated by the plasma immersion biasing technique. The issue of macroparticle contamination has been addressed by a variety of novel plasma filters. In spite of all of these advantages, this deposition technique has not been widely adopted in the western nations for commercial coating except in the case of enhancing the performance of cutting tools. The purpose of the this review is to explore reasons for this lack of general use of the technology and to point out some encouraging recent developments which may lead to its accelerated adoption for a much wider variety of applications in the near future.

  8. Metal oxide growth, spin precession measurements and Raman spectroscopy of CVD graphene

    Science.gov (United States)

    Matsubayashi, Akitomo

    quality on each step through the device fabrication process. The direct interface formation between the ferromagnetic transition metal and graphene indicated the strong interaction at the interface which could lead spin scattering. Fabricating metal oxide layers prior to metal deposition on CVD graphene significantly reduces the interfacial interactions induced by the transition metals. This knowledge is beneficial for the fabrication of future graphene based spintronic devices as well as other types of graphene based devices.

  9. Lipids, atherosclerosis and CVD risk: is CRP an innocent bystander?

    DEFF Research Database (Denmark)

    Nordestgaard, B G; Zacho, J

    2009-01-01

    exclude that genetically elevated CRP cause CVD. CONCLUSION: These data suggest that elevated CRP per se does not cause CVD; however, inflammation per se possibly contributes to CVD. Elevated CRP levels more likely is a marker for the extent of atherosclerosis or for the inflammatory activity...

  10. Influence of surface morphology and microstructure on performance of CVD tungsten coating under fusion transient thermal loads

    Science.gov (United States)

    Lian, Youyun; Liu, Xiang; Wang, Jianbao; Feng, Fan; Lv, Yanwei; Song, Jiupeng; Chen, Jiming

    2016-12-01

    Thick tungsten coatings have been deposited by chemical vapor deposition (CVD) at a rapid growth rate. A series of tungsten coatings with different thickness and surface morphology were prepared. The surface morphology, microstructure and preferred orientation of the CVD tungsten coatings were investigated. Thermal shock analyses were performed by using an electron beam facility to study the influence of the surface morphology and the microstructure on the thermal shock resistance of the CVD tungsten coatings. Repetitive (100 pulses) ELMs-like thermal shock loads were applied at various temperatures between room temperature and 600 °C with pulse duration of 1 ms and an absorbed power density of up to 1 GW/m2. The results of the tests demonstrated that the specific surface morphology and columnar crystal structure of the CVD tungsten have significant influence on the surface cracking threshold and crack propagation of the materials. The CVD tungsten coatings with a polished surface show superior thermal shock resistance as compared with that of the as-deposited coatings with a rough surface.

  11. Parametric optimization during machining of AISI 304 Austenitic Stainless Steel using CVD coated DURATOMIC cutting insert

    Directory of Open Access Journals (Sweden)

    M. Kaladhar

    2012-08-01

    Full Text Available In this work, Taguchi method is applied to determine the optimum process parameters for turning of AISI 304 austenitic stainless steel on CNC lathe. A Chemical vapour deposition (CVD coated cemented carbide cutting insert is used which is produced by DuratomicTM technology of 0.4 and 0.8 mm nose radii. The tests are conducted at four levels of Cutting speed, feed and depth of cut. The influence of these parameters are investigated on the surface roughness and material removal rate (MRR. The Analysis Of Variance (ANOVA is also used to analyze the influence of cutting parameters during machining. The results revealed that cutting speed significantly (46.05% affected the machined surface roughness values followed by nose radius (23.7%. The influence of the depth of cut (61.31% in affecting material removal rate (MRR is significantly large. The cutting speed (20.40% is the next significant factor. Optimal range and optimal level of parameters are also predicted for responses.

  12. Low-temperature growth of multi-walled carbon nanotubes by thermal CVD

    Energy Technology Data Exchange (ETDEWEB)

    Halonen, Niina; Leino, Anne-Riikka; Maeklin, Jani; Kukkola, Jarmo; Toth, Geza [Microelectronics and Materials Physics Laboratories, University of Oulu (Finland); Sapi, Andras; Nagy, Laszlo; Puskas, Robert; Kukovecz, Akos; Konya, Zoltan [Department of Applied and Environmental Chemistry, University of Szeged (Hungary); Wu, Ming-Chung; Liao, Hsueh-Chung; Su, Wei-Fang [Department of Materials Science and Engineering, National Taiwan University, Taipei (China); Shchukarev, Andrey; Mikkola, Jyri-Pekka [Department of Chemistry, Institute of Technical Chemistry, Chemical-Biological Center, Umeaa University (Sweden); Kordas, Krisztian [Microelectronics and Materials Physics Laboratories, University of Oulu (Finland); Department of Chemistry, Institute of Technical Chemistry, Chemical-Biological Center, Umeaa University (Sweden)

    2011-11-15

    Low-temperature thermal chemical vapor deposition (thermal CVD) synthesis of multi-walled carbon nanotubes (MWCNTs) was studied using a large variety of different precursor compounds. Cyclopentene oxide, tetrahydrofuran, methanol, and xylene:methanol mixture as oxygen containing heteroatomic precursors, while xylene and acetylene as conventional hydrocarbon feedstocks were applied in the experiments. The catalytic activity of Co, Fe, Ni, and their bi- as well as tri-metallic combinations were tested for the reactions. Low-temperature CNT growth occurred at 400 C when using bi-metallic Co-Fe and tri-metallic Ni-Co-Fe catalyst (on alumina) and methanol or acetylene as precursors. In the case of monometallic catalyst nanoparticles, only Co (both on alumina and on silica) was found to be active in the low temperature growth (below 500 C) from oxygenates such as cyclopentene oxide and methanol. The structure and composition of the achieved MWCNTs products were studied by scanning and transmission electron microscopy (SEM and TEM) as well as by Raman and X-ray photoelectron spectroscopy (XPS) and by X-ray diffraction (XRD). The successful MWCNT growth below 500 C is promising from the point of view of integrating MWCNT materials into existing IC fabrication technologies. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Scalable ZnO nanotube arrays grown on CVD-graphene films

    Directory of Open Access Journals (Sweden)

    J. B. Park

    2016-10-01

    Full Text Available We report the growth of wafer-scale arrays of individually position-controlled and vertically aligned ZnO nanotube arrays on graphene deposited by chemical vapor deposition (CVD-graphene. Introducing two-dimensional layered materials such as graphene as a growth buffer has recently been suggested for growing nanomaterials on traditionally incompatible substrates. However, their growth has been restricted to small areas or had limited controllability. Here, we study the distinct growth behavior of ZnO on CVD-graphene that makes the selective area growth of individual nanostructures on its surface difficult, and propose a set of methods to overcome this. The resulting nanotube arrays, as examined by scanning electron microscopy and transmission electron microscopy, exhibited uniform morphologies and high structural quality over a large area and could be prepared on a broad variety of substrates, including amorphous, metallic, or flexible substrates.

  14. Pulse-height defect in single-crystal CVD diamond detectors

    Energy Technology Data Exchange (ETDEWEB)

    Beliuskina, O.; Imai, N. [The University of Tokyo, Center for Nuclear Study, Wako, Saitama (Japan); Strekalovsky, A.O.; Aleksandrov, A.A.; Aleksandrova, I.A.; Ilich, S.; Kamanin, D.V.; Knyazheva, G.N.; Kuznetsova, E.A.; Mishinsky, G.V.; Pyatkov, Yu.V.; Strekalovsky, O.V.; Zhuchko, V.E. [JINR, Flerov Laboratory of Nuclear Reactions, Dubna, Moscow Region (Russian Federation); Devaraja, H.M. [Manipal University, Manipal Centre for Natural Sciences, Manipal, Karnataka (India); Heinz, C. [II. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Giessen (Germany); Heinz, S. [II. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Giessen (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Hofmann, S.; Kis, M.; Kozhuharov, C.; Maurer, J.; Traeger, M. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Pomorski, M. [CEA, LIST, Diamond Sensor Laboratory, CEA/Saclay, Gif-sur-Yvette (France)

    2017-02-15

    The pulse-height versus deposited energy response of a single-crystal chemical vapor deposition (scCVD) diamond detector was measured for ions of Ti, Cu, Nb, Ag, Xe, Au, and of fission fragments of {sup 252} Cf at different energies. For the fission fragments, data were also measured at different electric field strengths of the detector. Heavy ions have a significant pulse-height defect in CVD diamond material, which increases with increasing energy of the ions. It also depends on the electrical field strength applied at the detector. The measured pulse-height defects were explained in the framework of recombination models. Calibration methods known from silicon detectors were modified and applied. A comparison with data for the pulse-height defect in silicon detectors was performed. (orig.)

  15. Significance of vapor phase chemical reactions on CVD rates predicted by chemically frozen and local thermochemical equilibrium boundary layer theories

    Science.gov (United States)

    Gokoglu, Suleyman A.

    1988-01-01

    This paper investigates the role played by vapor-phase chemical reactions on CVD rates by comparing the results of two extreme theories developed to predict CVD mass transport rates in the absence of interfacial kinetic barrier: one based on chemically frozen boundary layer and the other based on local thermochemical equilibrium. Both theories consider laminar convective-diffusion boundary layers at high Reynolds numbers and include thermal (Soret) diffusion and variable property effects. As an example, Na2SO4 deposition was studied. It was found that gas phase reactions have no important role on Na2SO4 deposition rates and on the predictions of the theories. The implications of the predictions of the two theories to other CVD systems are discussed.

  16. Nanocrystalline sp 2 and sp 3 carbons: CVD synthesis and applications

    Science.gov (United States)

    Terranova, M. L.; Rossi, M.; Tamburri, E.

    2016-11-01

    The design and production of innovative materials based on nanocrystalline sp 2- and sp 3-coordinated carbons is presently a focus of the scientific community. We present a review of the nanostructures obtained in our labs using a series of synthetic routes, which make use of chemical vapor deposition (CVD) techniques for the selective production of non-planar graphitic nanostructures, nanocrystalline diamonds, and hybrid two-phase nanostructures.

  17. Tribological Testing of Some Potential PVD and CVD Coatings for Steel Wire Drawing Dies

    OpenAIRE

    Nilsson, Maria; Olsson, Mikael

    2010-01-01

    Cemented carbide is today the most frequently used drawing die material in steel wire drawing applications. This is mainly due to the possibility to obtain a broad combination of hardness and toughness thus meeting the requirements concerning strength, crack resistance and wear resistance set by the wire drawing process. However, the increasing cost of cemented carbide in combination with the possibility to increase the wear resistance of steel through the deposition of wear resistant CVD and...

  18. A 3D tomographic EBSD analysis of a CVD diamond thin film

    Directory of Open Access Journals (Sweden)

    Tao Liu, Dierk Raabe and Stefan Zaefferer

    2008-01-01

    Full Text Available We have studied the nucleation and growth processes in a chemical vapor deposition (CVD diamond film using a tomographic electron backscattering diffraction method (3D EBSD. The approach is based on the combination of a focused ion beam (FIB unit for serial sectioning in conjunction with high-resolution EBSD. Individual diamond grains were investigated in 3-dimensions particularly with regard to the role of twinning.

  19. Comparison of Straight and Helical Nanotube Production in a Swirled Fluid CVD Reactor

    OpenAIRE

    Bathgate, Graham; Iyuke, Sunny; Kavishe, Frank

    2012-01-01

    Research into Carbon Nanotubes and their applications is fast becoming an extremely popular topic, and any means to greatly improve the synthesis process has a huge marketability. While investigating the feasibility of continuous production of single-walled carbon nanotubes in a vertical Swirled Fluid Chemical Vapour Deposition (CVD) reactor, it was discovered that helical nanotubes were lifted from the reactor by the gas current while straight tubes remained behind. Investigation into the me...

  20. Detection of erosion/deposition depth using a low frequency passive Radio Frequency Identification (RFID) technology

    Science.gov (United States)

    Moustakidis, Iordanis Vlasios

    This thesis presents an experimental study both in the laboratory and field to develop and test a method for continuously measuring and monitoring scour using an automated identification technology known as Radio Frequency Identification (RFID). RFID systems consist of three main components, namely (a) the reader which controls the system, (b) the transponder (derived from transmitter/responder) that transmits data to the reader and (c) the excitation antenna that allows the communication between the reader and the transponder. The study provides an insight into the RFID technology and develops the framework for using this technology to eventually address two central themes in river mechanics and sediment transport; (a) the determination of the active layer thickness and (b) the scour/deposition depth around a hydraulic structure. In particular, this study develops the methodology for relating the signal strength of a radio frequency (RF) device with the distance between an excitation antenna and the RF device. The experiments presented herein are classified into two main groups, (1) the laboratory and (2) the RF signal vs. the detection distance experiments (field experiments). The laboratory experiments were designed to understand the effect of key RFID parameters (e.g., transponder orientation with respect to the excitation antenna plane, maximum antenna-transponder detection distance), measured in terms of the transponder return RF signal strength for various antenna-transponder distances, transponder orientations with respect to the excitation antenna plane and different mediums in between the excitation antenna and the transponder, on the overall performance of the RFID system. On the other hand, the RF signal vs. the detection distance experiments were based on the results obtained during the laboratory experiments and focused on developing calibration curves by relating the transponder return RF signal strength with the distance between the excitation

  1. Superhydrophobic Copper Surfaces with Anticorrosion Properties Fabricated by Solventless CVD Methods.

    Science.gov (United States)

    Vilaró, Ignasi; Yagüe, Jose L; Borrós, Salvador

    2017-01-11

    Due to continuous miniaturization and increasing number of electrical components in electronics, copper interconnections have become critical for the design of 3D integrated circuits. However, corrosion attack on the copper metal can affect the electronic performance of the material. Superhydrophobic coatings are a commonly used strategy to prevent this undesired effect. In this work, a solventless two-steps process was developed to fabricate superhydrophobic copper surfaces using chemical vapor deposition (CVD) methods. The superhydrophobic state was achieved through the design of a hierarchical structure, combining micro-/nanoscale domains. In the first step, O2- and Ar-plasma etchings were performed on the copper substrate to generate microroughness. Afterward, a conformal copolymer, 1H,1H,2H,2H-perfluorodecyl acrylate-ethylene glycol diacrylate [p(PFDA-co-EGDA)], was deposited on top of the metal via initiated CVD (iCVD) to lower the surface energy of the surface. The copolymer topography exhibited a very characteristic and unique nanoworm-like structure. The combination of the nanofeatures of the polymer with the microroughness of the copper led to achievement of the superhydrophobic state. AFM, SEM, and XPS were used to characterize the evolution in topography and chemical composition during the CVD processes. The modified copper showed water contact angles as high as 163° and hysteresis as low as 1°. The coating withstood exposure to aggressive media for extended periods of time. Tafel analysis was used to compare the corrosion rates between bare and modified copper. Results indicated that iCVD-coated copper corrodes 3 orders of magnitude slower than untreated copper. The surface modification process yielded repeatable and robust superhydrophobic coatings with remarkable anticorrosion properties.

  2. Study of CVD diamond layers with amorphous carbon admixture by Raman scattering spectroscopy

    Directory of Open Access Journals (Sweden)

    Dychalska Anna

    2015-12-01

    Full Text Available Raman spectroscopy is a most often used standard technique for characterization of different carbon materials. In this work we present the Raman spectra of polycrystalline diamond layers of different quality, synthesized by Hot Filament Chemical Vapor Deposition method (HF CVD. We show how to use Raman spectroscopy for the analysis of the Raman bands to determine the structure of diamond films as well as the structure of amorphous carbon admixture. Raman spectroscopy has become an important technique for the analysis of CVD diamond films. The first-order diamond Raman peak at ca. 1332 cm−1 is an unambiguous evidence for the presence of diamond phase in the deposited layer. However, the existence of non-diamond carbon components in a CVD diamond layer produces several overlapping peaks in the same wavenumber region as the first order diamond peak. The intensities, wavenumber, full width at half maximum (FWHM of these bands are dependent on quality of diamond layer which is dependent on the deposition conditions. The aim of the present work is to relate the features of diamond Raman spectra to the features of Raman spectra of non-diamond phase admixture and occurrence of other carbon structures in the obtained diamond thin films.

  3. Corrosion protection of SiC-based ceramics with CVD mullite coatings

    Energy Technology Data Exchange (ETDEWEB)

    Sarin, V.; Mulpuri, R.; Auger, M. [Boston University, Boston, MA (United States) Manufacturing Engineering

    1996-04-20

    SiC based ceramics have been identified as the leading candidate materials for elevated temperature applications in harsh oxidation/corrosion environments. It has been established that a protective coating can be effectively used to avoid problems with excessive oxidation and hot corrosion. However, to date, no coating configuration has been developed that can withstand the rigorous requirements imposed by such applications. Chemical vapor deposited (CVD) mullite coatings due to their desirable properties of toughness, corrosion resistance, and good coefficient of thermal expansion match with SiC are being developed as a potential solution. Formation of mullite on ceramic substrates via chemical vapor deposition was investigated. Thermodynamic calculations performed on the AlCl{sub 3}- SiCl{sub 4}-CO{sub 2}-H{sub 2} system were used to construct equilibrium CVD phase diagrams. Through process optimization, crystalline CVD mullite coatings have been successfully grown on SiC and Si{sub 3}N{sub 4} substrates. Results from the thermodynamic analysis, process optimization, and effect of various process parameters on deposition rate and coating morphology are discussed.

  4. Q-factors of CVD monolayer graphene and graphite inductors

    Science.gov (United States)

    Wang, Zidong; Zhang, Qingping; Peng, Pei; Tian, Zhongzheng; Ren, Liming; Zhang, Xing; Huang, Ru; Wen, Jincai; Fu, Yunyi

    2017-08-01

    A carbon-based inductor may serve as an important passive component in a carbon-based radio-frequency (RF) integrated circuit (IC). In this work, chemical vapor deposition (CVD) synthesized monolayer graphene and graphite inductors are fabricated and their Q-factors are investigated. We find that the large series resistance of signal path (including coil resistance and contact resistance) in monolayer graphene inductors causes negative Q-factors at the whole frequency range in measurement. Comparatively, some of the graphite inductors have all of their Q-factors above zero, due to their small signal path resistance. We also note that some other graphite inductors have negative Q-factor values at low frequency regions, but positive Q-factor values at high frequency regions. With an equivalent circuit model, we confirm that the negative Q-factors of some graphite inductors at low frequency regions are related to their relatively large contact resistances, and we are able to eliminate these negative Q-factors by improving the graphite-metal contact. Furthermore, the peak Q-factor (Q p) can be enhanced by lowering down the resistance of graphite coil. For an optimized 3/4-turn graphite inductor, the measured maximum Q-factor (Q m) can reach 2.36 and the peak Q-factor is theoretically predicted by the equivalent circuit to be as high as 6.46 at a high resonant frequency, which is beyond the testing frequency range. This research indicates that CVD synthesized graphite thin film is more suitable than graphene for fabricating inductors in carbon-based RF IC in the future.

  5. Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

    NARCIS (Netherlands)

    Mohammadi, V.; Nihtianov, S.

    2016-01-01

    The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition(CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and co

  6. Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

    NARCIS (Netherlands)

    Mohammadi, V.; Nihtianov, S.

    2016-01-01

    The lateral gas phase diffusion length of boron atoms, LB, along silicon and boron surfaces during chemical vapor deposition(CVD) using diborane (B2H6) is reported. The value of LB is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and co

  7. Effect of mixture ratios and nitrogen carrier gas flow rates on the morphology of carbon nanotube structures grown by CVD

    CSIR Research Space (South Africa)

    Malgas, GF

    2008-02-01

    Full Text Available This paper reports on the growth of carbon nanotubes (CNTs) by thermal Chemical Vapour Deposition (CVD) and investigates the effects of nitrogen carrier gas flow rates and mixture ratios on the morphology of CNTs on a silicon substrate by vaporizing...

  8. The conductivity of high-fluence noble gas ion irradiated CVD polycrystalline diamond

    Science.gov (United States)

    Borisov, A. M.; Kazakov, V. A.; Mashkova, E. S.; Ovchinnikov, M. A.; Shemukhin, A. A.; Sigalaev, S. K.

    2017-09-01

    The conductivity of surface layer of polycrystalline CVD (Chemical Vapor Deposition) diamond has been studied experimentally after high-fluence 30 keV Ne+, 20 and 30 keV Ar+ ion irradiation at target temperature range from 30 to 400 °C. The hot ion irradiation of CVD diamond may be described as ion-stimulated heat graphitization in which an exponential resistance decrease with increasing of the irradiation temperature is much faster than at the heat treatment. Under ion irradiation of CVD diamond the graphite-like materials resistivity is achieved at temperatures not exceeding 200 °C. The graphite phase in a heterogeneous structure of diamond irradiated layer is in dynamic equilibrium. In the temperature range from RT to 400 °C, the proportion of graphite phase increases so that at temperatures 200 < Tir < 400 °C it is dominant. The Raman spectra of ion-induced conductive layer created on CVD diamond reflect the processes of nanostructural ordering - disordering of sp2-bonded carbon.

  9. TECHNOLOGICAL ADVANCEMENT OF DEPOSIT WELDING AND GAS LASER CUTTING TO INCREASE THE EFFICIENCY OF THE BIMETALLIC TOOL PRODUCTION

    Directory of Open Access Journals (Sweden)

    Burlachenko Oleg Vasil’evich

    2017-08-01

    Full Text Available Deposit welding is the application of a layer of metal on the surface of a product using fusion welding. In this paper, we consider the method of improving the technology of gas laser cutting, which makes it possible to achieve a high productivity of manufacturing a bimetallic tool. The present paper is concerned with the advantages of gas laser cutting which allows to consider this particular process of separating materials as highly-productive, low-waste, and advanced method of removing allowances of weld-deposit high-speed steel on the working surfaces of bimetallic tool. Urgency of the use of deposit welding and gas laser cutting to improve the efficiency of production of bimetallic tool is shown. The comparative analysis of gas-laser cutting and other cutting methods is given according to the geometrical parameters of cutting and surface quality. Analysis of the results of experimental studies has confirmed the high technological attractiveness and economic efficiency of manufacturing composite structures of punches and matrices when applying deposit welding of cutting parts with high-speed steels. The cost of dimensional processing of the welded cutting part is reduced by 4 to 6 times, while the manufacturing time is reduced by 6 to 12 times.

  10. CVD elaboration of nanostructured TiO2-Ag thin films with efficient antibacterial properties

    OpenAIRE

    Mungkalasiri, Jitti; Bedel, Laurent; Emieux, Fabrice; Dore, Jeanne; Renaud, François N. R.; Sarantopoulos, Christos; Maury, Francis

    2010-01-01

    Nanostructured TiO2-Ag composite coatings are deposited by direct liquid injection metal-organic (DLI-MO) CVD at 683K in a one-step process. Silver pivalate (AgPiv) and titanium tetra-iso-propoxide (TTIP) are used as Ag and Ti molecular precursors, respectively. Metallic silver nanoparticles are co-deposited with anatase TiO2 on stainless steel, glass, and silicon wafers. The silver particles are uniformly embedded in the oxide matrix through the entire film thickness. The influence of the gr...

  11. Fabricating Large-Area Sheets of Single-Layer Graphene by CVD

    Science.gov (United States)

    Bronikowski, Michael; Manohara, Harish

    2008-01-01

    This innovation consists of a set of methodologies for preparing large area (greater than 1 cm(exp 2)) domains of single-atomic-layer graphite, also called graphene, in single (two-dimensional) crystal form. To fabricate a single graphene layer using chemical vapor deposition (CVD), the process begins with an atomically flat surface of an appropriate substrate and an appropriate precursor molecule containing carbon atoms attached to substituent atoms or groups. These molecules will be brought into contact with the substrate surface by being flowed over, or sprayed onto, the substrate, under CVD conditions of low pressure and elevated temperature. Upon contact with the surface, the precursor molecules will decompose. The substituent groups detach from the carbon atoms and form gas-phase species, leaving the unfunctionalized carbon atoms attached to the substrate surface. These carbon atoms will diffuse upon this surface and encounter and bond to other carbon atoms. If conditions are chosen carefully, the surface carbon atoms will arrange to form the lowest energy single-layer structure available, which is the graphene lattice that is sought. Another method for creating the graphene lattice includes metal-catalyzed CVD, in which the decomposition of the precursor molecules is initiated by the catalytic action of a catalytic metal upon the substrate surface. Another type of metal-catalyzed CVD has the entire substrate composed of catalytic metal, or other material, either as a bulk crystal or as a think layer of catalyst deposited upon another surface. In this case, the precursor molecules decompose directly upon contact with the substrate, releasing their atoms and forming the graphene sheet. Atomic layer deposition (ALD) can also be used. In this method, a substrate surface at low temperature is covered with exactly one monolayer of precursor molecules (which may be of more than one type). This is heated up so that the precursor molecules decompose and form one

  12. TSC response of irradiated CVD diamond films

    CERN Document Server

    Borchi, E; Bucciolini, M; Guasti, A; Mazzocchi, S; Pirollo, S; Sciortino, S

    1999-01-01

    CVD diamond films have been irradiated with electrons, sup 6 sup 0 Co photons and protons in order to study the dose response to exposure to different particles and energies and to investigate linearity with dose. The Thermally Stimulated Current (TSC) has been studied as a function of the dose delivered to polymethilmetacrilate (PMMA) in the range from 1 to 12 Gy with 20 MeV electrons from a linear accelerator. The TSC spectrum has revealed the presence of two components with peak temperatures of about 470 and 520 K, corresponding to levels lying in the diamond band gap with activation energies of the order of 0.7 - 1 eV. After the subtraction of the exponential background the charge emitted during the heating scan has been evaluated and has been found to depend linearly on the dose. The thermally emitted charge of the CVD diamond films has also been studied using different particles. The samples have been irradiated with the same PMMA dose of about 2 Gy with 6 and 20 MeV electrons from a Linac, sup 6 sup 0 ...

  13. Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

    Science.gov (United States)

    Naito, Teruki; Konno, Nobuaki; Yoshida, Yukihisa

    2016-07-01

    Open air silicon deposition was performed by combining silane-free atmospheric pressure plasma-enhanced chemical transport and a newly developed local ambient gas control technology. The effect of air contamination on silicon deposition was investigated using a vacuum chamber, and the allowable air contamination level was confirmed to be 3 ppm. The capability of the local ambient gas control head was investigated numerically and experimentally. A safe and clean process environment with air contamination less than 1 ppm was achieved. Combining these technologies, a microcrystalline silicon film was deposited in open air, the properties of which were comparable to those of silicon films deposited in a vacuum chamber.

  14. Thermoluminescent properties of CVD diamond: applications to ionising radiation dosimetry; Proprietes thermoluminescentes du diamant CVD: applications a la dosimetrie des rayonnements ionisants

    Energy Technology Data Exchange (ETDEWEB)

    Petitfils, A

    2007-09-15

    Remarkable properties of synthetic diamond (human soft tissue equivalence, chemical stability, non-toxicity) make this material suitable for medical application as thermoluminescent dosimeter (TLD). This work highlights the interest of this material as radiotherapy TLD. In the first stage of this work, we looked after thermoluminescent (TL) and dosimetric properties of polycrystalline diamond made by Chemically Vapor Deposited (CVD) synthesis. Dosimetric characteristics are satisfactory as TLD for medical application. Luminescence thermal quenching on diamond has been investigated. This phenomenon leads to a decrease of dosimetric TL peak sensitivity when the heating rate increases. The second part of this work analyses the use of synthetic diamond as TLD in radiotherapy. Dose profiles, depth dose distributions and the cartography of an electron beam obtained with our samples are in very good agreement with results from an ionisation chamber. It is clearly shown that CVD) diamond is of interest to check beams of treatment accelerators. The use of these samples in a control of treatment with Intensity Modulated Radiation Therapy underlines good response of synthetic diamond in high dose gradient areas. These results indicate that CVD diamond is a promising material for radiotherapy dosimetry. (author)

  15. Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced CVD

    Institute of Scientific and Technical Information of China (English)

    GUO Yu; ZHANG Xiwen; HAN Gaorong

    2007-01-01

    Hydrogenated amorphous silicon (a-Si:H) films were deposited on Si (100) and glass substrates by dielectric barrier discharge enhanced chemical vapour deposition (DBD-CVD)in (SiH4+H2) atmosphere at room temperature.Results of the thickness measurement,SEM (scanning electron microscope),Raman,and FTIR (Fourier transform infrared spectroscopy) show that with the increase in the applied peak voltage,the deposition rate and network order of the films increase,and the hydrogen bonding configurations mainly in di-hydrogen (Si-H2) and poly hydrogen (SiH2)n are introduced into the films.The UV-visible transmission spectra show that with the decrease in Sill4/ (SiH4+H2) the thin films'band gap shifts from 1.92 eV to 2.17 eV.These experimental results are in agreement with the theoretic analysis of the DBD discharge.The deposition of a-Si:H films by the DBD-CVD method as reported here for the first time is attractive because it allows fast deposition of a-Si:H films on large-area low-melting-point substrates and requires only a low cost of production without additional heating or pumping equipment.

  16. A generic strategy for co-presentation of heparin-binding growth factors based on CVD polymerization.

    Science.gov (United States)

    Deng, Xiaopei; Lahann, Joerg

    2012-09-14

    A multifunctional copolymer with both aldehyde and alkyne groups is synthesized by chemical vapor deposition (CVD) for orthogonal co-immobilization of biomolecules. Surface analytical methods including FTIR and XPS are used to confirm the surface modification. Heparin-binding growth factors [basic fibroblast growth factor (bFGF) in this study] can be immobilized through interaction with heparin, which was covalently attached to the CVD surface through an aldehyde-hydrazide reaction. In parallel, an alkyne-azide reaction is used to orthogonally co-immobilize an adhesion peptide as the second biomolecule.

  17. In situ study of key material and process reliability issues in the chemical vapor deposition of copper

    Science.gov (United States)

    Lou, Ishing

    With the limitations of current aluminum based metallization schemes used in microelectronics, the development of a manufacturable chemical vapor deposition (CVD) process for copper metallization schemes is crucial to meet the stringent requirements of sub-quarter micron device technology and beyond. The work presented herein focused on investigating key material and process reliability issues pertaining to Cu CVD processing. In particular, a unique combination of in-situ gas phase Fourier transform infrared (FTIR) and quadrupole mass spectrometry (QMS) was employed to study the role of hydrogen in thermal CVD of copper using (tmvs)Cusp{I}(hfac). These studies showed that hydrogen provides significant enhancement in the deposition rate of copper interconnects. Based on the QMS and FTIR data, this enhancement could be attributed to the role of hydrogen in assisting in the removal of tmvs from (tmvs)Cusp{I}(hfac), thus enhancing the conversion of Cusp{I}(hfac) intermediates to Cusp{o} and Cusp{II}(hfac)sb2 and providing a wider process window with higher conversion efficiency. In addition, in-situ real time QMS studies were performed of the gas phase evolution and decomposition pathways of (tmvs)Cusp{I}(hfac) during thermal CVD of copper. The QMS investigations focused on determining the ionization efficiency curves and appearance potentials of (tmvs)Cusp{I}(hfac) under real CVD processing conditions. The resulting curves and associated potentials were then employed to identify the most likely precursor decomposition pathways and examine relevant implications for thermal CVD of copper from (tmvs)Cusp{I}(hfac). Finally, a hydrogen-plasma assisted CVD (PACVD) process was developed for the growth of device quality gold for incorporation as dopant in emerging Cu CVD based metallization interconnects. In particular, it was demonstrated that the PACVD gold process window identified can maintain very low gold deposition rates (gold is a promising in-situ Cu doping technique

  18. Polycrystalline CVD diamond device level modeling for particle detection applications

    Science.gov (United States)

    Morozzi, A.; Passeri, D.; Kanxheri, K.; Servoli, L.; Lagomarsino, S.; Sciortino, S.

    2016-12-01

    Diamond is a promising material whose excellent physical properties foster its use for radiation detection applications, in particular in those hostile operating environments where the silicon-based detectors behavior is limited due to the high radiation fluence. Within this framework, the application of Technology Computer Aided Design (TCAD) simulation tools is highly envisaged for the study, the optimization and the predictive analysis of sensing devices. Since the novelty of using diamond in electronics, this material is not included in the library of commercial, state-of-the-art TCAD software tools. In this work, we propose the development, the application and the validation of numerical models to simulate the electrical behavior of polycrystalline (pc)CVD diamond conceived for diamond sensors for particle detection. The model focuses on the characterization of a physically-based pcCVD diamond bandgap taking into account deep-level defects acting as recombination centers and/or trap states. While a definite picture of the polycrystalline diamond band-gap is still debated, the effect of the main parameters (e.g. trap densities, capture cross-sections, etc.) can be deeply investigated thanks to the simulated approach. The charge collection efficiency due to β -particle irradiation of diamond materials provided by different vendors and with different electrode configurations has been selected as figure of merit for the model validation. The good agreement between measurements and simulation findings, keeping the traps density as the only one fitting parameter, assesses the suitability of the TCAD modeling approach as a predictive tool for the design and the optimization of diamond-based radiation detectors.

  19. Enhancement of the Electrical Properties of CVD-Grown Graphene with Ascorbic Acid Treatment

    Science.gov (United States)

    Tang, Chunmiao; Chen, Zhiying; Zhang, Haoran; Zhang, Yaqian; Zhang, Yanhui; Sui, Yanping; Yu, Guanghui; Cao, Yijiang

    2016-02-01

    Ascorbic acid was used to modify to chemical vapor deposition (CVD)-grown graphene films transferred onto SiO2 substrate. Residual polymer (polymethyl methacrylate), Fe3+, Cl-, H2O, and O2 affected the electrical and thermal properties on graphene during the transfer or device fabrication processes. Exposure of transferred graphene to ascorbic acid resulted in significantly enhanced electrical properties with increased charge carrier mobility. All devices exhibited more than 30% improvement in room temperature carrier mobility in air. The carrier mobility of the treated graphene did not significantly decrease in 21 days. This result can be attributed to electron donation to graphene through the -OH functional group in ascorbic acid that is absorbed in graphene. This work provides a method to enhance the electrical properties of CVD-grown graphene.

  20. Synthesis of Few-Layer Graphene Using DC PE-CVD

    Science.gov (United States)

    Kim, Jeong Hyuk; Castro, Edward Joseph D.; Hwang, Yong Gyoo; Lee, Choong Hun

    2011-12-01

    Few layer graphene (FLG) had been successfully grown on polycrystalline Ni films or foils on a large scale using DC Plasma Enhanced Chemical Vapor Deposition (DC PE-CVD) as a result of the Raman spectra drawn out of the sample. The size of graphene films is dependent on the area of the Ni film as well as the DC PE-CVD chamber size. Synthesis time has an effect on the quality of graphene produced. However, further analysis and experiments must be pursued to further identify the optimum settings and conditions of producing better quality graphene. Applied plasma voltage on the other hand, had an influence on the minimization of defects in the graphene grown. It has also presented a method of producing a free standing PMMA/graphene membrane on a FeCl3(aq) solution which could then be transferred to a desired substrate.

  1. Chemical Properties of Carbon Nanotubes Prepared Using Camphoric Carbon by Thermal-CVD

    Science.gov (United States)

    Azira, A. A.; Rusop, M.

    2010-03-01

    Chemical properties and surface study on the influence of starting carbon materials by using thermal chemical vapor deposition (Thermal-CVD) to produced carbon nanotubes (CNTs) is investigated. The CNTs derived from camphor were synthesized as the precursor material due to low sublimation temperature. The major parameters are also evaluated in order to obtain high-yield and high-quality CNTs. The prepared CNTs are examined using field emission scanning electron microscopy (FESEM) to determine the microstructure of nanocarbons. The FESEM investigation of the CNTs formed on the support catalysts provides evidence that camphor is suitable as a precursor material for nanotubes formation. The chemical properties of the CNTs were conducted using FTIR spectroscopy and PXRD analysis. The high-temperature graphitization process induced by the Thermal-CVD enables the hydrocarbons to act as carbon sources and changes the aromatic species into the layered graphite structure of CNTs.

  2. Electronic properties and strain sensitivity of CVD-grown graphene with acetylene

    Science.gov (United States)

    Yang, Meng; Sasaki, Shinichirou; Ohnishi, Masato; Suzuki, Ken; Miura, Hideo

    2016-04-01

    Although many studies have shown that large-area monolayer graphene can be formed by chemical vapor deposition (CVD) using methane gas, the growth of monolayer graphene using highly reactive acetylene gas remains a big challenge. In this study, we synthesized a uniform monolayer graphene film by low-pressure CVD (LPCVD) with acetylene gas. On the base of Raman spectroscopy measurements, it was found that up to 95% of the as-grown graphene is monolayer. The electronic properties and strain sensitivity of the LPCVD-grown graphene with acetylene were also evaluated by testing the fabricated field-effect transistors (FETs) and strain sensors. The derived carrier mobility and gauge factor are 862-1150 cm2/(V·s) and 3.4, respectively, revealing the potential for high-speed FETs and strain sensor applications. We also investigated the relationship between the electronic properties and the graphene domain size.

  3. Aligned carbon nanotubes catalytically grown on iron-based nanoparticles obtained by laser-induced CVD

    Energy Technology Data Exchange (ETDEWEB)

    Le Normand, F. [Groupe Surfaces and Interfaces, IPCMS, UMR 7504 CNRS, Bat 70, 23 rue du Loess, 67034 Strasbourg Cedex (France)], E-mail: Francois.Le-Normand@ipcms.u-strasbg.fr; Cojocaru, C.S.; Ersen, O. [Groupe Surfaces and Interfaces, IPCMS, UMR 7504 CNRS, Bat 70, 23 rue du Loess, 67034 Strasbourg Cedex (France); Legagneux, P.; Gangloff, L. [THALES R and T, Departementale 128, 91747 Palaiseau Cedex (France); Fleaca, C. [Groupe Surfaces and Interfaces, IPCMS, UMR 7504 CNRS, Bat 70, 23 rue du Loess, 67034 Strasbourg Cedex (France); National Institute for Lasers, Plasma and Radiation Physics, Laser Department, P.O. Box MG-36, R-76900 Bucharest (Romania); Alexandrescu, R.; Dumitrache, F.; Morjan, I. [National Institute for Lasers, Plasma and Radiation Physics, Laser Department, P.O. Box MG-36, R-76900 Bucharest (Romania)

    2007-12-15

    Iron-based nanoparticles are prepared by a laser-induced chemical vapor deposition (CVD) process. They are characterized as body-centered Fe and Fe{sub 2}O{sub 3} (maghemite/magnetite) particles with sizes {<=}5 and 10 nm, respectively. The Fe particles are embedded in a protective carbon matrix. Both kind of particles are dispersed by spin-coating on SiO{sub 2}/Si(1 0 0) flat substrates. They are used as catalyst to grow carbon nanotubes by a plasma- and filaments-assisted catalytic CVD process (PE-HF-CCVD). Vertically oriented and thin carbon nanotubes (CNTs) were grown with few differences between the two samples, except the diameter in relation to the initial size of the iron particles, and the density. The electron field emission of these samples exhibit quite interesting behavior with a low turn-on voltage at around 1 V/{mu}m.

  4. Aligned carbon nanotubes catalytically grown on iron-based nanoparticles obtained by laser-induced CVD

    Science.gov (United States)

    Le Normand, F.; Cojocaru, C. S.; Ersen, O.; Legagneux, P.; Gangloff, L.; Fleaca, C.; Alexandrescu, R.; Dumitrache, F.; Morjan, I.

    2007-12-01

    Iron-based nanoparticles are prepared by a laser-induced chemical vapor deposition (CVD) process. They are characterized as body-centered Fe and Fe 2O 3 (maghemite/magnetite) particles with sizes ≤5 and 10 nm, respectively. The Fe particles are embedded in a protective carbon matrix. Both kind of particles are dispersed by spin-coating on SiO 2/Si(1 0 0) flat substrates. They are used as catalyst to grow carbon nanotubes by a plasma- and filaments-assisted catalytic CVD process (PE-HF-CCVD). Vertically oriented and thin carbon nanotubes (CNTs) were grown with few differences between the two samples, except the diameter in relation to the initial size of the iron particles, and the density. The electron field emission of these samples exhibit quite interesting behavior with a low turn-on voltage at around 1 V/μm.

  5. Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature—Part Ⅰ Simulation of CVD diamond film growth under Joe-Badgwell-Hauge model

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The growth of {100} oriented CVD (Chemical Vapor Deposition)diamond film under Joe-Badgwell-Hauge (J-B-H) model is simulated at atomic scale by using revised KMC (Kinetic Monte Carlo) method. The results show that: (1) under Joe's model, the growth mechanism from single carbon species is suitable for the growth of {100} oriented CVD diamond film in low temperature; (2) the deposition rate and surface roughness () under Joe's model are influenced intensively by temperature ()and not evident bymass fraction of atom chlorine; (3)the surface roughness increases with the deposition rate, i.e. the film quality becomes worse with elevated temperature, in agreement with Grujicic's prediction; (4) the simulation results cannot make sure the role of single carbon insertion.

  6. Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature—Part I simulation of CVD diamond film growth under Joe—Badgwell—Hauge model

    Institute of Scientific and Technical Information of China (English)

    Xizhong; YuZhang; 等

    2002-01-01

    The growth of {100} oriented CVD( Chemical Vapor Deposition) diamond film under Joe-Badgwell-Hauge(J-B-H) model is simulated at atomic scale by using revised KMC(Kinetic Monte Carlo)method.The results show that:(1) under Joe's model,the growth mechanism from single carbon species is suitable for the growth of {100} oriented CVD diamond film in low temperature;(2) the deposition rate and surface roughness(Rq) under Joe's model are influenced intensively by temperature(Ts) and not evident bymass fraction Wc1 of atom chlorine;(3) the surface roughness increases with the deposition rate.i.e.the film quality becomes worse with elevated temperature,in agreement with Grujicic's prediction;(4) the simulation results cannot make sure the role of single carbon insertion.

  7. Cold Vacuum Drying (CVD) Set Point Determination

    Energy Technology Data Exchange (ETDEWEB)

    PHILIPP, B.L.

    2000-01-12

    This document provides the calculations used to determine the error of safety class signals used for the CVD process These errors are used with the Parameter limits to arrive at the initial set point. The Safety Class Instrumentation and Control (SCIC) system provides active detection and response to process anomalies that, if unmitigated would result in a safety event. Specifically actuation of the SCIC system includes two portions. The portion which isolates the MCO and initiates the safety-class helium (SCHe) purge, and the portion which detects and stops excessive heat input to the MCO on high tempered water MCO inlet temperature. For the MCO isolation and purge the SCIC receives signals from MCO pressure (both positive pressure and vacuum) helium flow rate, bay high temperature switches, seismic trips and time under vacuum trips.

  8. CVD diamond sensors for charged particle detection

    CERN Document Server

    Krammer, Manfred; Berdermann, E; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Dencuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Perera, L P; Pirollo, S; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Wetstein, M; White, C; Zeuner, W; Zöller, M

    2001-01-01

    CVD diamond material was used to build position-sensitive detectors for single-charged particles to be employed in high-intensity physics experiments. To obtain position information, metal contacts shaped as strips or pixels are applied to the detector surface for one- or two- dimensional coordinate measurement. Strip detectors 2*4 cm/sup 2/ in size with a strip distance of 50 mu m were tested. Pixel detectors of various pixel sizes were bump bonded to electronics chips and investigated. A key issue for the use of these sensors in high intensity experiments is the radiation hardness. Several irradiation experiments were carried out with pions, protons and neutrons exceeding a fluence of 10/sup 15/ particles/cm/sup 2/. The paper presents an overview of the results obtained with strip and pixel detectors in high-energy test beams and summarises the irradiation studies. (8 refs).

  9. Premature menopause linked to CVD and osteoporosis.

    Science.gov (United States)

    Park, Claire; Overton, Caroline

    2010-03-01

    Premature menopause affects 1% of women under the age of 40, the usual age of the menopause is 51. Most women will present with irregular periods or no periods at all with or without climacteric symptoms. Around 10% of women present with primary amenorrhoea. A careful history and examination are required. It is important to ask specifically about previous chemotherapy or radiotherapy and to look for signs of androgen excess e.g. polycystic ovarian syndrome, adrenal problems e.g. galactorrhoea and thyroid goitres. Once pregnancy has been excluded, a progestagen challenge test can be performed in primary care. Norethisterone 5 mg tds po for ten days or alternatively medroxyprogesterone acetate 10 mg daily for ten days is prescribed. A withdrawal bleed within a few days of stopping the norethisterone indicates the presence of oestrogen and bleeding more than a few drops is considered a positive withdrawal bleed. The absence of a bleed indicates low levels of oestrogen, putting the woman at risk of CVD and osteoporosis. FSH levels above 30 IU/l are an indicator that the ovaries are failing and the menopause is approaching or has occurred. It should be remembered that FSH levels fluctuate during the month and from one month to the next, so a minimum of two measurements should be made at least four to six weeks apart. The presence of a bleed should not exclude premature menopause as part of the differential diagnosis as there can be varying and unpredictable ovarian function remaining. The progestagen challenge test should not be used alone, but in conjunction with FSH, LH and oestradiol. There is no treatment for premature menopause. Women desiring pregnancy should be referred to a fertility clinic and discussion of egg donation. Women not wishing to become pregnant should be prescribed HRT until the age of 50 to control symptoms of oestrogen deficiency and reduce the risks of osteoporosis and CVD.

  10. Radionuclide imaging technologies and their use in evaluating asthma drug deposition in the lungs.

    Science.gov (United States)

    Newman, Stephen P; Pitcairn, Gary R; Hirst, Peter H; Rankin, Lisa

    2003-07-18

    Whole lung and regional lung deposition of inhaled asthma drugs in the lungs can be quantified using either two-dimensional or three-dimensional radionuclide imaging methods. The two-dimensional method of gamma scintigraphy has been the most widely used, and is currently considered the industry standard, but the three-dimensional methods (SPECT, single photon emission computed tomography; and PET, positron emission tomography) give superior regional lung deposition data and will undoubtedly be used more frequently in future. Recent developments in radionuclide imaging are described, including an improved algorithm for assessing regional lung deposition in gamma scintigraphy, and a patent-protected radiolabelling method (TechneCoat), applicable to both gamma scintigraphy and SPECT. Radionuclide imaging data on new inhaled asthma products provide a milestone assessment, and the data form a bridge between in vitro testing and a full clinical trials program, allowing the latter to be entered with increased confidence.

  11. Chemical Vapor Deposition of Aluminum Oxide Thin Films

    Science.gov (United States)

    Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

    2010-01-01

    Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

  12. Highly efficient shrinkage of inverted-pyramid silicon nanopores by plasma-enhanced chemical vapor deposition technology

    Science.gov (United States)

    Wang, Yifan; Deng, Tao; Chen, Qi; Liang, Feng; Liu, Zewen

    2016-06-01

    Solid-state nanopore-based analysis systems are currently one of the most attractive and promising platforms in sensing fields. This work presents a highly efficient method to shrink inverted-pyramid silicon nanopores using plasma-enhanced chemical vapor deposition (PECVD) technology by the deposition of SiN x onto the surface of the nanopore. The contraction of the inverted-pyramid silicon nanopores when subjected to the PECVD process has been modeled and carefully analyzed, and the modeling data are in good agreement with the experimental results within a specific PECVD shrinkage period (˜0-600 s). Silicon nanopores within a 50-400 nm size range contract to sub-10 nm dimensions. Additionally, the inner structure of the nanopores after the PECVD process has been analyzed by focused ion beam cutting process. The results show an inner structure morphology change from inverted-pyramid to hourglass, which may enhance the spatial resolution of sensing devices.

  13. Highly efficient shrinkage of inverted-pyramid silicon nanopores by plasma-enhanced chemical vapor deposition technology.

    Science.gov (United States)

    Wang, Yifan; Deng, Tao; Chen, Qi; Liang, Feng; Liu, Zewen

    2016-06-24

    Solid-state nanopore-based analysis systems are currently one of the most attractive and promising platforms in sensing fields. This work presents a highly efficient method to shrink inverted-pyramid silicon nanopores using plasma-enhanced chemical vapor deposition (PECVD) technology by the deposition of SiN x onto the surface of the nanopore. The contraction of the inverted-pyramid silicon nanopores when subjected to the PECVD process has been modeled and carefully analyzed, and the modeling data are in good agreement with the experimental results within a specific PECVD shrinkage period (∼0-600 s). Silicon nanopores within a 50-400 nm size range contract to sub-10 nm dimensions. Additionally, the inner structure of the nanopores after the PECVD process has been analyzed by focused ion beam cutting process. The results show an inner structure morphology change from inverted-pyramid to hourglass, which may enhance the spatial resolution of sensing devices.

  14. The evaluation of radiation damage parameter for CVD diamond

    Science.gov (United States)

    Grilj, V.; Skukan, N.; Jakšić, M.; Pomorski, M.; Kada, W.; Kamiya, T.; Ohshima, T.

    2016-04-01

    There are a few different phenomenological approaches that aim to track the dependence of signal height in irradiated solid state detectors on the fluence of damaging particles. However, none of them are capable to provide a unique radiation hardness parameter that would reflect solely the material capability to withstand high radiation environment. To extract such a parameter for chemical vapor deposited (CVD) diamond, two different diamond detectors were irradiated with proton beams in MeV energy range and subjected afterwards to ion beam induced charge (IBIC) analysis. The change in charge collection efficiency (CCE) due to defects produced was investigated in context of a theoretical model that was developed on the basis of the adjoint method for linearization of the continuity equations of electrons and holes. Detailed modeling of measured data resulted with the first known value of the kσ product for diamond, where k represents the number of charge carriers' traps created per one simulated primary lattice vacancy and σ represents the charge carriers' capture cross section. As discussed in the text, this product could be considered as a true radiation damage parameter.

  15. Contact resistance study of various metal electrodes with CVD graphene

    Science.gov (United States)

    Gahoi, Amit; Wagner, Stefan; Bablich, Andreas; Kataria, Satender; Passi, Vikram; Lemme, Max C.

    2016-11-01

    In this study, the contact resistance of various metals to chemical vapor deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying channel widths and separation between contacts have been fabricated and electrically characterized in ambient air and vacuum condition. Electrical contacts are made with five metals: gold, nickel, nickel/gold, palladium and platinum/gold. The lowest value of 92 Ω μm is observed for the contact resistance between graphene and gold, extracted from back-gated devices at an applied back-gate bias of -40 V. Measurements carried out under vacuum show larger contact resistance values when compared with measurements carried out in ambient conditions. Post processing annealing at 450 °C for 1 h in argon-95%/hydrogen-5% atmosphere results in lowering the contact resistance value which is attributed to the enhancement of the adhesion between metal and graphene. The results presented in this work provide an overview for potential contact engineering for high performance graphene-based electronic devices.

  16. Thermoelectric properties of CVD grown large area graphene

    Science.gov (United States)

    Sherehiy, Andriy; Jayasinghe, Ruwantha; Stallard, Robert; Sumanasekera, Gamini; Sidorov, Anton; Benjamin, Daniel; Jiang, Zhigang; Yu, Qingkai; Wu, Wei; Bao, Jiming; Liu, Zhihong; Pei, Steven; Chen, Yong

    2010-03-01

    The thermoelectric power (TEP) of CVD (Chemical Vapor Deposition) grown large area graphene transferred onto a Si/SiO2 substrate was measured by simply attaching two miniature thermocouples and a resistive heater. Availability of such large area graphene facilitates straight forward TEP measurement without the use of any microfabrication processes. All investigated graphene samples showed a positive TEP ˜ + 30 μV/K in ambient conditions and saturated at a negative value as low as ˜ -75 μV/K after vacuum-annealing at 500 K in a vacuum of ˜10-7 Torr. The observed p-type behavior under ambient conditions is attributed to the oxygen doping, while the n-type behavior under degassed conditions is due to electron doping from SiO2 surface states. It was observed that the sign of the TEP switched from negative to positive for the degassed graphene when exposed to acceptor gases. Conversely, the TEP of vacuum-annealed graphene exposed to the donor gases became even more negative than the TEP of vacuum-annealed sample.

  17. The evaluation of radiation damage parameter for CVD diamond

    Energy Technology Data Exchange (ETDEWEB)

    Grilj, V., E-mail: vgrilj@irb.hr [Division for Experimental Physics, Ruđer Bošković Institute, 10000 Zagreb (Croatia); Skukan, N.; Jakšić, M. [Division for Experimental Physics, Ruđer Bošković Institute, 10000 Zagreb (Croatia); Pomorski, M. [CEA-LIST, Diamond Sensors Laboratory, Gif-sur-Yvette F-91191 (France); Kada, W. [Division of Electronics and Informatics, Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Kamiya, T.; Ohshima, T. [Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292 (Japan)

    2016-04-01

    There are a few different phenomenological approaches that aim to track the dependence of signal height in irradiated solid state detectors on the fluence of damaging particles. However, none of them are capable to provide a unique radiation hardness parameter that would reflect solely the material capability to withstand high radiation environment. To extract such a parameter for chemical vapor deposited (CVD) diamond, two different diamond detectors were irradiated with proton beams in MeV energy range and subjected afterwards to ion beam induced charge (IBIC) analysis. The change in charge collection efficiency (CCE) due to defects produced was investigated in context of a theoretical model that was developed on the basis of the adjoint method for linearization of the continuity equations of electrons and holes. Detailed modeling of measured data resulted with the first known value of the kσ product for diamond, where k represents the number of charge carriers’ traps created per one simulated primary lattice vacancy and σ represents the charge carriers’ capture cross section. As discussed in the text, this product could be considered as a true radiation damage parameter.

  18. A Fast CVD Diamond Beam Loss Monitor for LHC

    CERN Document Server

    Griesmayer, E; Dobos, D; Effinger, E; Pernegger, H

    2011-01-01

    Chemical Vapour Deposition (CVD) diamond detectors were installed in the collimation area of the CERN LHC to study their feasibility as Fast Beam Loss Monitors in a high-radiation environment. The detectors were configured with a fast, radiation-hard pre-amplifier with a bandwidth of 2 GHz. The readout was via an oscilloscope with a bandwidth of 1 GHz and a sampling rate of 5 GSPS. Despite the 250 m cable run from the detectors to the oscilloscope, single MIPs were resolved with a 2 ns rise time, a pulse width of 10 ns and a time resolution of less than 1 ns. Two modes of operation were applied. For the analysis of unexpected beam aborts, the loss profile was recorded in a 1 ms buffer and, for nominal operation, the histogram of the time structure of the losses was recorded in synchronism with the LHC period of 89.2 μs. Measurements during the LHC start-up (February to December 2010) are presented. The Diamond Monitors gave an unprecedented insight into the time structure of the beam losses resolving the 400...

  19. Rare genetic variants associated with early onset CVD

    NARCIS (Netherlands)

    Maiwald, S.

    2015-01-01

    Cardiovascular disease (CVD) is the major cause of morbidity and mortality in Western societies. CVD is mainly triggered by atherosclerosis. A combination of lipid accumulation, inflammation at the vessel wall and thrombotic reactions are underlying its pathobiology. Despite improvements in the ther

  20. Prevention: Reducing the risk of CVD in patients with periodontitis.

    Science.gov (United States)

    Genco, Robert J; Van Dyke, Thomas E

    2010-09-01

    The association between periodontitis and other chronic diseases, such as cardiovascular disease (CVD) and type 2 diabetes mellitus, could be related to systemic inflammation initiated by a local inflammatory challenge. Oliveira et al. have added lack of oral hygiene, and its link with systemic inflammation, to the spectrum of risk factors for CVD.

  1. Superhydrophobic aluminium-based surfaces: Wetting and wear properties of different CVD-generated coating types

    Energy Technology Data Exchange (ETDEWEB)

    Thieme, M., E-mail: michael.thieme@tu-dresden.de [Technische Universität Dresden, Institute of Materials Science, 01062 Dresden (Germany); Streller, F., E-mail: streller@seas.upenn.edu [Technische Universität Dresden, Institute of Materials Science, 01062 Dresden (Germany); Simon, F., E-mail: frsimon@ipfdd.de [Leibniz-Institut für Polymerforschung Dresden, Postfach 120 411, 01005 Dresden (Germany); Frenzel, R., E-mail: frenzelr@ipfdd.de [Leibniz-Institut für Polymerforschung Dresden, Postfach 120 411, 01005 Dresden (Germany); White, A.J. [GVD Corporation, 45 Spinelli Place, Cambridge, MA 02138 (United States)

    2013-10-15

    In view of generating superhydrophobic aluminium-based surfaces, this work presents further results for the combination of anodic oxidation as the primary pretreatment method and chemical vapour deposition (CVD) variants for chemical modification producing coatings of 250–1000 nm thickness. In detail, CVD involved the utilisation of i – hexafluoropropylene oxide as precursor within the hot filament CVD process for the deposition of poly(tetrafluoroethylene) coatings at alternative conditions (PTFE-AC) and ii – 1,3,5-trivinyltrimethylcyclotrisiloxane for the deposition of polysiloxane coatings (PSi) by initiated CVD. The substrate material was Al Mg1 subjected to usual or intensified sulphuric acid anodisation pretreatments (SAAu, SAAi, respectively) affording various degrees of surface micro-roughness (SAAu < SAAi) to the oxidic layers. Performance characteristics were evaluated in the original as-coated states and after standardised artificial weathering and/or mild wear testing. Superhydrophobicity (SH) was observed with the system SAAi + PTFE-AC similarly to former findings with the standard hot filament CVD PTFE coating variant (SAAi + PTFE-SC). The results indicated that the specific coating morphology made an important contribution to the water-repellency, because even some of the SAAu-based samples tended to reveal SH. Subjecting samples to weathering treatment resulted in a general worsening of the wetting behaviour, primarily limited to the receding contact angles. These tendencies were correlated with the chemical composition of the sample surfaces as analysed by X-ray photoelectron spectroscopy. The wear tests showed, as evaluated by scanning electron microscopy and contact angle measurement, that the PTFE coatings were relatively sensitive to friction. This was connected with a dramatic deterioration of the water-repelling properties. PSi-coated surfaces generally showed rather poor water-repellency, but this coating type was surprisingly

  2. Excimer Laser Beam Analyzer Based on CVD Diamond

    Science.gov (United States)

    Girolami, Marco; Salvatori, Stefano; Conte, Gennaro

    2010-11-01

    1-D and 2-D detector arrays have been realized on CVD-diamond. The relatively high resistivity of diamond in the dark allowed the fabrication of photoconductive "sandwich" strip (1D) or pixel (2D) detectors: a semitransparent light-receiving back-side contact was used for detector biasing. Cross-talk between pixels was limited by using intermediate guard contacts connected at the same ground potential of the pixels. Each pixel photocurrent was conditioned by a read-out electronics composed by a high sensitive integrator and a Σ-Δ ADC converter. The overall 500 μs conversion time allowed a data acquisition rate up to 2 kSPS. The measured fast photoresponse of the samples in the ns time regime suggests to use the proposed devices for fine tuning feedback of high-power pulsed-laser cavities, whereas solar-blindness guarantees high performance in UV beam diagnostics also under high intensity background illumination. Offering unique properties in terms of thermal conductivity and visible-light transparency, diamond represents one of the most suitable candidate for the detection of high-power UV laser emission. The technology of laser beam profiling is evolving with the increase of excimer lasers applications that span from laser-cutting to VLSI and MEMS technologies. Indeed, to improve emission performances, fine tuning of the laser cavity is required. In such a view, the development of a beam-profiler, able to work in real-time between each laser pulse, is mandatory.

  3. Novel photochemical vapor deposition reactor for amorphous silicon solar cell deposition

    Science.gov (United States)

    Rocheleau, Richard E.; Hegedus, Steven S.; Buchanan, Wayne A.; Jackson, Scott C.

    1987-07-01

    A novel photochemical vapor deposition (photo-CVD) reactor having a flexible ultraviolet-transparent Teflon curtain and a secondary gas flow to eliminate deposition on the window has been used to deposit amorphous silicon films and p-i-n solar cells. The background levels of atmospheric contaminants (H2O, CO2, N2) depend strongly on the vacuum procedures but not on the presence of a Teflon curtain in the reactor. Intrinsic films with a midgap density of states of 3×1015 eV-1 cm-3 and all-photo-CVD pin solar cells with efficiencies of 8.5% have been deposited.

  4. Research Update: Large-area deposition, coating, printing, and processing techniques for the upscaling of perovskite solar cell technology

    Science.gov (United States)

    Razza, Stefano; Castro-Hermosa, Sergio; Di Carlo, Aldo; Brown, Thomas M.

    2016-09-01

    To bring perovskite solar cells to the industrial world, performance must be maintained at the photovoltaic module scale. Here we present large-area manufacturing and processing options applicable to large-area cells and modules. Printing and coating techniques, such as blade coating, slot-die coating, spray coating, screen printing, inkjet printing, and gravure printing (as alternatives to spin coating), as well as vacuum or vapor based deposition and laser patterning techniques are being developed for an effective scale-up of the technology. The latter also enables the manufacture of solar modules on flexible substrates, an option beneficial for many applications and for roll-to-roll production.

  5. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor.

    Science.gov (United States)

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnO(x)-CVD layers.

  6. Design and implementation of a novel portable atomic layer deposition/chemical vapor deposition hybrid reactor

    Science.gov (United States)

    Selvaraj, Sathees Kannan; Jursich, Gregory; Takoudis, Christos G.

    2013-09-01

    We report the development of a novel portable atomic layer deposition chemical vapor deposition (ALD/CVD) hybrid reactor setup. Unique feature of this reactor is the use of ALD/CVD mode in a single portable deposition system to fabricate multi-layer thin films over a broad range from "bulk-like" multi-micrometer to nanometer atomic dimensions. The precursor delivery system and control-architecture are designed so that continuous reactant flows for CVD and cyclic pulsating flows for ALD mode are facilitated. A custom-written LabVIEW program controls the valve sequencing to allow synthesis of different kinds of film structures under either ALD or CVD mode or both. The entire reactor setup weighs less than 40 lb and has a relatively small footprint of 8 × 9 in., making it compact and easy for transportation. The reactor is tested in the ALD mode with titanium oxide (TiO2) ALD using tetrakis(diethylamino)titanium and water vapor. The resulting growth rate of 0.04 nm/cycle and purity of the films are in good agreement with literature values. The ALD/CVD hybrid mode is demonstrated with ALD of TiO2 and CVD of tin oxide (SnOx). Transmission electron microscopy images of the resulting films confirm the formation of successive distinct TiO2-ALD and SnOx-CVD layers.

  7. Sol–gel deposited ceria thin films as gate dielectric for CMOS technology

    Indian Academy of Sciences (India)

    Anil G Khairnar; Ashok M Mahajan

    2013-04-01

    In this work, cerium oxide thin films were prepared using cerium chloride heptahydrate, ethanol and citric acid as an additive by sol–gel spin-coating technique and further characterized to study the various properties. Chemical composition of deposited films has been analysed by FTIR which shows existence of CeO2. The samples have been optically characterized using ellipsometry to find refractive index of 2.18 and physical thickness which is measured to be 5.56 nm. MOS capacitors were fabricated by depositing aluminum (Al) metal using the thermal evaporation technique on the top of CeO2 thin films. Capacitance–voltage measurement was carried out to calculate the dielectric constant, flat-band voltage shift of 18.92, 0.3–0.5V, respectively and conductance–voltage study was carried out to determine the Dit of 1.40 × 1013 eV-1 cm-2 at 1MHz.

  8. Technological properties of coal from the Kusheyakovskii deposit in the Kuzbass

    Energy Technology Data Exchange (ETDEWEB)

    Proskuryakov, A.E.; Ivanov, V.P.; Stankevich, A.S.; Podchishchaeva, N.I.; Chegodaeva, N.A.

    1986-11-01

    The Kusheyakovskii black coal deposit in the southeastern Kuzbass consists of 25 seams 1.0-2.5 m thick with dip angles to 20 degrees. Black coal from the deposit is characterized by relatively high vitrinite content from 70 to 82% and low exinite content from 1 to 3%. Coal rank described by vitrinite reflectivity ranges from 0.66 to 0.86%, volatile matter from 39.7% to 35.9%. Coal from the 5-7 seam group is classified as G6 power coal. Coal from the 10-11 seam group is also classified as G6 power coal but its caking power is greater. The 12-13 seam group is most valuable as about half of the coal seams consists of caking gas or gas-lean coal. Coal characteristics are given in 3 tables.

  9. Possibilities of the Technology of Additive Production for Making Complex-Shape Parts and Depositing Functional Coatings from Metallic Powders

    Science.gov (United States)

    Grigor'ev, S. N.; Tarasova, T. V.

    2016-01-01

    The aspects of terminology, definitions and classification in the technology of additive production are considered. The principal possibility of fabrication of complex-shape parts from a refractory cobalt alloy by the method of selective laser melting and deposition of hard and wear-resistant coatings from Ti and SiC powders by coaxial laser surfacing is shown. The technological possibility of microlaser surfacing with lateral resolution about 100 μm in the production of parts from aluminum alloys is considered. The mechanisms of formation of structure in the studied alloys typical for selective laser melting, laser surfacing and microlaser surfacing are determined. The physical and mechanical properties of the alloys are investigated.

  10. Recent progress in optical coating technology: low-voltage ion plating deposition

    Science.gov (United States)

    Guenther, Karl H.

    1990-08-01

    After fairly extensive discussions of the advantages and disadvantages of low energy and high energy ion beam bombardment of a growing film, we review briefly a number of experimental results obtained with various samples made with low voltage reactive ion plating deposition. The availability of a state-of-the-art high vacuum coating machine specifically equipped for this process is the foundation for a major leap toward achieving near-perfect optical coatings. The high density of ion plated thin films makes them impermeable to water vapor and corrosive solutions. This has been demonstrated with protected aluminum mirrors, polarizers, and infrared anti-reflection coatings. An indication of the high packing density is the substantially higher refractive index than that of comparable layers deposited with either conventional electron beam evaporation or ion assisted deposition. The spectral transmittance of multilayer stacks of oxide thin films is lower than expected from theoretical predictions which assume absorption-free dielectrics. The observed absorption is primarily of an interface nature rather than a volume effect and occurs predominantly in combinations of Ti02 and Si02 thin films.

  11. Laser Metal Deposition as Repair Technology for a Gas Turbine Burner Made of Inconel 718

    Science.gov (United States)

    Petrat, Torsten; Graf, Benjamin; Gumenyuk, Andrey; Rethmeier, Michael

    Maintenance, repair and overhaul of components are of increasing interest for parts of high complexity and expensive manufacturing costs. In this paper a production process for laser metal deposition is presented, and used to repair a gas turbine burner of Inconel 718. Different parameters for defined track geometries were determined to attain a near net shape deposition with consistent build-up rate for changing wall thicknesses over the manufacturing process. Spot diameter, powder feed rate, welding velocity and laser power were changed as main parameters for a different track size. An optimal overlap rate for a constant layer height was used to calculate the best track size for a fitting layer width similar to the part dimension. Deviations in width and height over the whole build-up process were detected and customized build-up strategies for the 3D sequences were designed. The results show the possibility of a near net shape repair by using different track geometries with laser metal deposition.

  12. Raman modes in transferred bilayer CVD graphene

    Directory of Open Access Journals (Sweden)

    Niilisk Ahti

    2015-01-01

    Full Text Available A systematic experimental Raman spectroscopic study of twisted bilayer graphene (tBLG domains localized inside wide-area single layer graphene (SLG produced by low-pressure CVD on Cu foil and transferred onto SiO2/Si substrate has been performed. According to the Raman characterization the tBLG domains had a great variety of twisting angles θ between the bottom and top graphene layers (6° < θ < 25°. The twisting angle θ was estimated from the spectral position of the rotating R and R' modes in the Raman spectrum.Under G band resonance conditions the breathing mode ZO' with a frequency of 95- 97 cm−1 was detected, and a breathing mode ZO was found in the spectra between 804 cm−1 and 836 cm−1, its position depending on the twisting angle θ. An almost linear relationship was found between the frequencies ωZO and ωR. Also a few other spectral peculiarities were found, e.g. a high-energy excitation of the G band resonance, the 2G overtone appearing at 3170-3180 cm−1 by the G band resonance, revealing a linear dispersion of 80 cm−1/eV of the 2D band in tBLG

  13. Fast method for reactor and feature scale coupling in ALD and CVD

    Energy Technology Data Exchange (ETDEWEB)

    Yanguas-Gil, Angel; Elam, Jeffrey W.

    2017-08-08

    Transport and surface chemistry of certain deposition techniques is modeled. Methods provide a model of the transport inside nanostructures as a single-particle discrete Markov chain process. This approach decouples the complexity of the surface chemistry from the transport model, thus allowing its application under general surface chemistry conditions, including atomic layer deposition (ALD) and chemical vapor deposition (CVD). Methods provide for determination of determine statistical information of the trajectory of individual molecules, such as the average interaction time or the number of wall collisions for molecules entering the nanostructures as well as to track the relative contributions to thin-film growth of different independent reaction pathways at each point of the feature.

  14. Randschicht- und durchgreifendes Härten von 42CrMo4 nach CVD-Beschichtung

    DEFF Research Database (Denmark)

    Pantleon, Karen; Kessler, Olaf; Hoffmann, Franz

    1999-01-01

    the properties of steel substrates ready for operation. Bulk hardening and induction surface hardening as two different post-deposition heat treatments are applied on TiN-coated 42CrMo4 (AISI 4140) substrates. The results show great advantages of induction surface hardening because only low distortion appear......The properties of hard coatings deposited using CVD-processes are usually excellent. However, high deposition temperatures may negativelly influence the properties of the steel substrates, especially in the case of low alloyed steels. Therefore, a subsequent heat treatment is necessary to restore...... and the properties of the steel substrates are improved without loosing good coating properties. Thereby, the properties of the steel substrates can be influenced by the parameters of induction heating in a wide range....

  15. CO{sub 2} laser-induced plasma CVD synthesis of diamond

    Energy Technology Data Exchange (ETDEWEB)

    Konov, V.I.; Prokhorov, A.M.; Uglov, S.A.; Bolshakov, A.P.; Leontiev, I.A. [Rossijskaya Akademiya Nauk, Moscow (Russian Federation). Inst. Obshchej Fiziki; Dausinger, F.; Huegel, H.; Angstenberger, B. [Institute of High Power Beam Technology (IFSW), Stuttgart University, Pfaffenwaldring 43, D-70569 Stuttgart (Germany); Sepold, G.; Metev, S. [Bremen Institute of Applied Beam Technology, D-28800 Bremen 33, Klagenfurter Str. 2 (Germany)

    1998-05-01

    A novel technique for CVD synthesis of materials that does not demand a vacuum chamber and provides high deposition rates has been developed. It is based on CO{sub 2} laser maintenance of a stationary optical discharge in a gas stream, exhausting over a substrate into the air (laser plasmatron). Nano- and polycrystalline-diamond films were deposited on tungsten substrates from atmospheric-pressure Xe(Ar):H{sub 2}:CH{sub 4} gas mixtures at flow rates of 2 l/min. A 2.5-kW CO{sub 2} laser focused beam produced plasma. The deposition area was about 1 cm{sup 2} and growth rates were up to 30-50 {mu}m/h. Peculiarities and advantages of laser plasmatrons are discussed. (orig.) With 4 figs., 4 refs.

  16. Randschicht- und durchgreifendes Härten von 42CrMo4 nach CVD-Beschichtung

    DEFF Research Database (Denmark)

    Pantleon, Karen; Kessler, Olaf; Hoffmann, Franz;

    1999-01-01

    The properties of hard coatings deposited using CVD-processes are usually excellent. However, high deposition temperatures may negativelly influence the properties of the steel substrates, especially in the case of low alloyed steels. Therefore, a subsequent heat treatment is necessary to restore...... the properties of steel substrates ready for operation. Bulk hardening and induction surface hardening as two different post-deposition heat treatments are applied on TiN-coated 42CrMo4 (AISI 4140) substrates. The results show great advantages of induction surface hardening because only low distortion appear...... and the properties of the steel substrates are improved without loosing good coating properties. Thereby, the properties of the steel substrates can be influenced by the parameters of induction heating in a wide range....

  17. Mechanics-driven patterning of CVD graphene for roll-based manufacturing process

    Science.gov (United States)

    Kim, Sang-Min; Jang, Bongkyun; Jo, Kyungmin; Kim, Donghyuk; Lee, Jihye; Kim, Kyung-Shik; Lee, Seung-Mo; Lee, Hak-Joo; Han, Seung Min; Kim, Jae-Hyun

    2017-06-01

    Graphene is considered as a promising material for flexible and transparent electrodes due to its outstanding electrical, optical, and mechanical properties. Efforts to mass-produce graphene electrodes led to the development of roll-to-roll chemical vapor deposition (CVD) graphene growth and transfer, and the only remaining obstacle to the mass-production of CVD graphene electrodes is a cost-effective patterning technique that is compatible with the roll-to-roll manufacturing. Herein, we propose a mechanics-driven technique for patterning graphene synthesized on copper foil (commonly used in roll-to-roll manufacturing). The copper foil is exposed to high temperature for a prolonged period during the CVD growth of graphene, and thus can result in recrystallization and grain growth of the copper foil and thereby reducing to the yield strength. This softening behavior of the copper was carefully controlled to allow simple stamp patterning of the graphene. The strength of the underlying substrate was controlled for the accuracy of the residual patterns. The proposed stamp patterning technique is mask-less and photoresist-free, and can be performed at room temperature without high-energy sources such as lasers or plasma. To demonstrate the capability of this process to produce a continuous electrode, a transparent in-plane supercapacitor was fabricated using the proposed patterning technique.

  18. Radio Frequency Transistors and Circuits Based on CVD MoS2.

    Science.gov (United States)

    Sanne, Atresh; Ghosh, Rudresh; Rai, Amritesh; Yogeesh, Maruthi Nagavalli; Shin, Seung Heon; Sharma, Ankit; Jarvis, Karalee; Mathew, Leo; Rao, Rajesh; Akinwande, Deji; Banerjee, Sanjay

    2015-08-12

    We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm(2)/(V s) was achieved. Radio frequency FETs were fabricated in the ground-signal-ground (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, fT, of 6.7 GHz and maximum intrinsic oscillation frequency, fmax, of 5.3 GHz for a device with a gate length of 250 nm. The MoS2 device afforded an extrinsic voltage gain Av of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS2, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of -15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.

  19. Synthesis of Different Layers of Graphene on Stainless Steel Using the CVD Method.

    Science.gov (United States)

    Ghaemi, Ferial; Abdullah, Luqman Chuah; Tahir, Paridah Md; Yunus, Robiah

    2016-12-01

    In this study, different types of graphene, including single-, few-, and multi-layer graphene, were grown on a stainless steel (SS) mesh coated with Cu catalyst by using the chemical vapor deposition (CVD) method. Even though the SS mesh consisted of different types of metals, such as Fe, Ni, and Cr, which can also be used as catalysts, the reason for coating Cu catalyst on the SS surface had been related to the nature of the Cu, which promotes the growth of graphene with high quality and quantity at low temperature and time. The reaction temperature and run time, as the most important parameters of the CVD method, were varied, and thus led to the synthesis of different layers of graphene. Moreover, the presence of single-, few-, and multi-layer graphene was confirmed by employing two techniques, namely transmission electron microscopy (TEM) and Raman spectroscopy. On top of that, electron dispersive X-ray (EDX) was further applied to establish the influence of the CVD parameters on the growth of graphene.

  20. Giant enhancement in vertical conductivity of stacked CVD graphene sheets by self-assembled molecular layers

    Science.gov (United States)

    Liu, Yanpeng; Yuan, Li; Yang, Ming; Zheng, Yi; Li, Linjun; Gao, Libo; Nerngchamnong, Nisachol; Nai, Chang Tai; Sangeeth, C. S. Suchand; Feng, Yuan Ping; Nijhuis, Christian A.; Loh, Kian Ping

    2014-11-01

    Layer-by-layer-stacked chemical vapour deposition (CVD) graphene films find applications as transparent and conductive electrodes in solar cells, organic light-emitting diodes and touch panels. Common to lamellar-type systems with anisotropic electron delocalization, the plane-to-plane (vertical) conductivity in such systems is several orders lower than its in-plane conductivity. The poor electronic coupling between the planes is due to the presence of transfer process organic residues and trapped air pocket in wrinkles. Here we show the plane-to-plane tunnelling conductivity of stacked CVD graphene layers can be improved significantly by inserting 1-pyrenebutyric acid N-hydroxysuccinimide ester between the graphene layers. The six orders of magnitude increase in plane-to-plane conductivity is due to hole doping, orbital hybridization, planarization and the exclusion of polymer residues. Our results highlight the importance of interfacial modification for enhancing the performance of LBL-stacked CVD graphene films, which should be applicable to other types of stacked two-dimensional films.

  1. Synthesis of Different Layers of Graphene on Stainless Steel Using the CVD Method

    Science.gov (United States)

    Ghaemi, Ferial; Abdullah, Luqman Chuah; Tahir, Paridah Md; Yunus, Robiah

    2016-11-01

    In this study, different types of graphene, including single-, few-, and multi-layer graphene, were grown on a stainless steel (SS) mesh coated with Cu catalyst by using the chemical vapor deposition (CVD) method. Even though the SS mesh consisted of different types of metals, such as Fe, Ni, and Cr, which can also be used as catalysts, the reason for coating Cu catalyst on the SS surface had been related to the nature of the Cu, which promotes the growth of graphene with high quality and quantity at low temperature and time. The reaction temperature and run time, as the most important parameters of the CVD method, were varied, and thus led to the synthesis of different layers of graphene. Moreover, the presence of single-, few-, and multi-layer graphene was confirmed by employing two techniques, namely transmission electron microscopy (TEM) and Raman spectroscopy. On top of that, electron dispersive X-ray (EDX) was further applied to establish the influence of the CVD parameters on the growth of graphene.

  2. Deposition and Investigation of Hydrophobic Coatings

    Directory of Open Access Journals (Sweden)

    Safonov Aleksey

    2015-01-01

    Full Text Available The fluoropolymer coatings of different morphologies are deposited by the HWCVD (Hot Wire CVD method. The effect of activator filament temperature on the structure of fluoropolymer coating is shown. The results of studying the hydrophobic fluoropolymer coatings with different structures, deposited by the HWCVD method, are presented.

  3. a Design of Experiment Study of the Nucleation of Chemical Vapor Deposited Diamond Films.

    Science.gov (United States)

    Tang, Chi

    1995-01-01

    Because of its property, diamond has a unique role in the semiconductor and tool industry. As diamond synthesis technology advances, more and more applications are emerging. However, in order to take advantage of its exceptional property, reliable control of nucleation and growth must be accomplished. In this study, the author systematically studies the nucleation process in chemical vapor deposition (CVD) of diamonds. Among many important intricacies concerning diamond nucleation on foreign surfaces, this study addresses the following issues: the role of ultrasonic pre-treatment in CVD; the correlation between hot filament chemical vapor deposition (HFCVD) and microwave assisted chemical vapor deposition (MACVD) control parameters and the nucleation processes; the role of biasing substrates on the nucleation density in MACVD; the correlation between parameters of biasing substrates and the nucleation density; the reliable control of nucleation in CVD diamond synthesis. To achieve the goal of this research, a multi -purpose deposition system was built enabling the author to eliminate unnecessary variables in the deposition process. To ensure the accuracy of the nucleation effects of parameters investigated, great effort was made to calibrate measurement instruments so that noise or fluctuations in the experiments were minimized. The implementation of design of experiments (DOE), a systematic investigating technique, vastly improved the efficiency of this study over the less sophisticated empirical approach. In addition, DOE allowed the author to quantitatively estimate the effects of control parameters. Finally, diamond deposition was confirmed by Scanning Electron microscope, Micro Raman Scattering and Rutherford Backscattering. This research has successfully implemented DOE in estimating the effects of diamond nucleation quantitatively. The mechanism of ultrasonic pre-treatment is explained, and its effects are ascribed to seeding. The effects of primary CVD

  4. Development surface modification technologies - A development of new nuclear materials by thin film deposition methods

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Won Jong; Lee, Min Goo; Kim, Hyun Ho; Kim, Yong Il; Kwang, Hee Soo [Korea Advanced Institute of Scienec and Technology, Taejon (Korea, Republic of)

    1995-08-01

    Pitting corrosion of TiN-coted Inconel 600 in hightemperature chloride solution was studied. To improve the pitting resistance of Inconel 600 by depositing TiN thin film, TiN must have the thickness greater than a critical value at which the characteristics of the film itself appear. E{sub np}s of the TiN-coated sample were higher than those of the bare Inconel 600 at all the solution temperature implying that the TiN film improved the pitting resistance. The heavy defects on the surface of the substrate which were incompletely covered by TiN film served as the active sites for the pit nucleation. Fine polishing reduced those defects and improved the pitting resistance of the TiN-coated Inconel 600. The pit densities of the TiN-coated samples were much lower than those of the bare Inconel 600 at low chloride concentrations. However, at high chloride concentrations the TiN film failed to improve the pitting resistance of the Inconel. The TiN film deposited by ion-plating on Stellite was studied. The X-ray analysis shows that the deposited films were only in .delta.-TiN phase and the texture was changed from (111) to (200) with the increase of N{sub 2}/Ar ratio. The impurities in TiN films were carbon and oxygen. The amounts of these impurities were decreased greatly when the substrate bias, -200 V, was applied compared to no bias. 40 refs., 4 tabs., 20 figs. (author)

  5. Fabrication and characteristics of self-assembly nano-polystyrene films by laser induced CVD

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, Tingting [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, CAEP, Mianyang 621900 (China); Cai, Congzhong [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Peng, Liping [Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, CAEP, Mianyang 621900 (China); Wu, Weidong, E-mail: wuweidongding@163.com [Science and Technology on Plasma Physics Laboratory, Research Center of Laser Fusion, CAEP, Mianyang 621900 (China)

    2013-10-01

    The self-assembly nano-polystyrene (PS) films have been prepared by laser induced CVD at room temperature. The XPS, Raman and UV–vis absorption spectra all indicated that the films were PS. The optical properties, microstructure and controllable nanostructure of PS films have been investigated. Dewetting-like microstructure in PS films was investigated and uniform island structures with a diameter of about 200 nm were observed at the deposition pressure of 14 Pa. The films possess good toughness and precisely controlled thicknesses. The free-standing PS films with thickness of 10 nm could be obtained by this method though a series of process.

  6. Utilization of Neutron Bang-time CVD diamond detectors at the Z Accelerator

    Science.gov (United States)

    Chandler, Gordon; Hahn, Kelly; Ruiz, Carlos; Jones, Brent; Gomez, Matthew; Hess, Mark; Harding, Eric; Knapp, Patrick; Bur, James; Torres, Jose; Norris, Edward; Cooper, Gary; Styron, Jedediah; Moy, Ken; McKenna, Ian; Glebov, Vladimir; Fittinghoff, David; May, Mark; Snyder, Lucas

    2016-10-01

    We are utilizing Chemical Vapor Deposited (CVD) Diamond detectors at 2.3 meters on the Z accelerator to infer neutron bang-times from Magnetized Liner Inertial Fusion (MagLIF) sources yielding up to 3e12 DD neutrons and to bound the neutron time history of Deuterium Gas Puff loads producing 5e13 DD neutrons. The current implementation of the diagnostic and initial results will be shown as well as our future plans for the diagnostic. Sandia is sponsored by the U.S. DOE's NNSA under contract DE-AC04-94AL85000.

  7. Fabrication of Nickel Nanotube Using Anodic Oxidation and Electrochemical Deposition Technologies and Its Hydrogen Storage Property

    Directory of Open Access Journals (Sweden)

    Yan Lv

    2016-01-01

    Full Text Available Electrochemical deposition technique was utilized to fabricate nickel nanotubes with the assistance of AAO templates. The topography and element component of the nickel nanotubes were characterized by TEM and EDS. Furthermore, the nickel nanotube was made into microelectrode and its electrochemical hydrogen storage property was studied using cyclic voltammetry. The results showed that the diameter of nickel nanotubes fabricated was around 20–100 mm, and the length of the nanotube could reach micron grade. The nickel nanotubes had hydrogen storage property, and the hydrogen storage performance was higher than that of nickel powder.

  8. Pulse-shape analysis for gamma background rejection in thermal neutron radiation using CVD diamond detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kavrigin, P., E-mail: pavel.kavrigin@cividec.at [Vienna University of Technology (Austria); Finocchiaro, P., E-mail: finocchiaro@lns.infn.it [INFN Laboratori Nazionali del Sud, via S.Sofia 62, 95123 Catania (Italy); Griesmayer, E., E-mail: erich.griesmayer@cividec.at [Vienna University of Technology (Austria); Jericha, E., E-mail: jericha@ati.ac.at [Vienna University of Technology (Austria); Pappalardo, A., E-mail: apappalardo@lns.infn.it [INFN Laboratori Nazionali del Sud, via S.Sofia 62, 95123 Catania (Italy); Weiss, C., E-mail: Christina.Weiss@cern.ch [Vienna University of Technology (Austria); European Organisation for Nuclear Research (CERN), Geneva (Switzerland)

    2015-09-21

    A novel technique for the rejection of gamma background from charged-particle spectra was demonstrated using a CVD diamond detector with a {sup 6}Li neutron converter installed at a thermal neutron beamline of the TRIGA research reactor at the Atominstitut (Vienna University of Technology). Spectra of the alpha particles and tritons of {sup 6}Li(n,T){sup 4}He thermal neutron capture reaction were separated from the gamma background by a new algorithm based on pulse-shape analysis. The thermal neutron capture in {sup 6}Li is already used for neutron flux monitoring, but the ability to remove gamma background allows using a CVD diamond detector for thermal neutron counting. The pulse-shape analysis can equally be applied to all cases where the charged products of an interaction are absorbed in the diamond and to other background particles that fully traverse the detector.

  9. Carbon Nanotubes Deposited by Hot Wire Plasma CVD and water assisted CVD for Energetic and Environmental Applications

    OpenAIRE

    2014-01-01

    Nanoscience and Nanotechnology have experienced a tremendous growth in few years. Nanotechnologies are the design, characterization, production and application of structures, devices and systems by controlling shape and size at nanometer scale. Carbon exists in several forms, depending on how the carbon atoms are arranged, their properties vary. One of the carbon forms is carbon nanotubes, which are capped at each end by half of a fullerene, and have aroused great interest in the research com...

  10. High growth rate of a-SiC:H films using ethane carbon source by HW-CVD method

    Indian Academy of Sciences (India)

    Mahesh M Kamble; Vaishali S Waman; Sanjay S Ghosh; Azam Mayabadi; Vasant G Sathe; T Shripathi; Habib M Pathan; Sandesh R Jadkar

    2013-12-01

    Hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared using pure silane (SiH4) and ethane (C2H6), a novel carbon source, without hydrogen dilution using hot wire chemical vapour deposition (HW-CVD) method at low substrate temperature (200 °C) and at reasonably higher deposition rate (19.5 Å/s < d < 35.2 Å/s). Formation of a-SiC:H films has been confirmed from FTIR, Raman and XPS analysis. Influence of deposition pressure on compositional, structural, optical and electrical properties has been investigated. FTIR spectroscopy analysis revealed that there is decrease in C–H and Si–H bond densities while, Si–C bond density increases with increase in deposition pressure. Total hydrogen content drops from 22.6 to 14.4 at.% when deposition pressure is increased. Raman spectra show increase in structural disorder with increase in deposition pressure. It also confirms the formation of nearly stoichiometric a-SiC:H films. Bandgap calculated using both Tauc’s formulation and absorption at 104 cm-1 shows decreasing trend with increase in deposition pressure. Decrease in refractive index and increase in Urbach energy suggests increase in structural disorder and microvoid density in the films. Finally, it has been concluded that C2H6 can be used as an effective carbon source in HW-CVD method to prepare stoichiometric a-SiC:H films.

  11. Potential of direct metal deposition technology for manufacturing thick functionally graded coatings and parts for reactors components

    Science.gov (United States)

    Thivillon, L.; Bertrand, Ph.; Laget, B.; Smurov, I.

    2009-03-01

    Direct metal deposition (DMD) is an automated 3D deposition process arising from laser cladding technology with co-axial powder injection to refine or refurbish parts. Recently DMD has been extended to manufacture large-size near-net-shape components. When applied for manufacturing new parts (or their refinement), DMD can provide tailored thermal properties, high corrosion resistance, tailored tribology, multifunctional performance and cost savings due to smart material combinations. In repair (refurbishment) operations, DMD can be applied for parts with a wide variety of geometries and sizes. In contrast to the current tool repair techniques such as tungsten inert gas (TIG), metal inert gas (MIG) and plasma welding, laser cladding technology by DMD offers a well-controlled heat-treated zone due to the high energy density of the laser beam. In addition, this technology may be used for preventative maintenance and design changes/up-grading. One of the advantages of DMD is the possibility to build functionally graded coatings (from 1 mm thickness and higher) and 3D multi-material objects (for example, 100 mm-sized monolithic rectangular) in a single-step manufacturing cycle by using up to 4-channel powder feeder. Approved materials are: Fe (including stainless steel), Ni and Co alloys, (Cu,Ni 10%), WC compounds, TiC compounds. The developed coatings/parts are characterized by low porosity (<1%), fine microstructure, and their microhardness is close to the benchmark value of wrought alloys after thermal treatment (Co-based alloy Stellite, Inox 316L, stainless steel 17-4PH). The intended applications concern cooling elements with complex geometry, friction joints under high temperature and load, light-weight mechanical support structures, hermetic joints, tubes with complex geometry, and tailored inside and outside surface properties, etc.

  12. Quarterly Report: Microchannel-Assisted Nanomaterial Deposition Technology for Photovoltaic Material Production

    Energy Technology Data Exchange (ETDEWEB)

    Palo, Daniel R.

    2011-04-26

    Quarterly report to ITP for Nanomanufacturing program. Report covers FY11 Q2. The primary objective of this project is to develop a nanomanufacturing process which will reduce the manufacturing energy, environmental discharge, and production cost associated with current nano-scale thin-film photovoltaic (PV) manufacturing approaches. The secondary objective is to use a derivative of this nanomanufacturing process to enable greener, more efficient manufacturing of higher efficiency quantum dot-based photovoltaic cells now under development. The work is to develop and demonstrate a scalable (pilot) microreactor-assisted nanomaterial processing platform for the production, purification, functionalization, and solution deposition of nanomaterials for photovoltaic applications. The high level task duration is shown. Phase I consists of a pilot platform for Gen II PV films along with parallel efforts aimed at Gen III PV quantum dot materials. Status of each task is described.

  13. Quarterly Report: Microchannel-Assisted Nanomaterial Deposition Technology for Photovoltaic Material Production

    Energy Technology Data Exchange (ETDEWEB)

    Palo, Daniel R.

    2011-04-26

    Quarterly report to ITP for Nanomanufacturing program. Report covers FY11 Q2. The primary objective of this project is to develop a nanomanufacturing process which will reduce the manufacturing energy, environmental discharge, and production cost associated with current nano-scale thin-film photovoltaic (PV) manufacturing approaches. The secondary objective is to use a derivative of this nanomanufacturing process to enable greener, more efficient manufacturing of higher efficiency quantum dot-based photovoltaic cells now under development. The work is to develop and demonstrate a scalable (pilot) microreactor-assisted nanomaterial processing platform for the production, purification, functionalization, and solution deposition of nanomaterials for photovoltaic applications. The high level task duration is shown. Phase I consists of a pilot platform for Gen II PV films along with parallel efforts aimed at Gen III PV quantum dot materials. Status of each task is described.

  14. CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties

    Energy Technology Data Exchange (ETDEWEB)

    Mantovan, R; Lamperti, A; Georgieva, M; Tallarida, G; Fanciulli, M, E-mail: roberto.mantovan@mdm.infm.i [Laboratorio Nazionale MDM CNR-INFM, Via C. Olivetti 2, 20041 Agrate Brianza (Italy)

    2010-02-17

    Magnetite (Fe{sub 3}O{sub 4}) is predicted to be half metallic at room temperature (RT) and it shows the highest Curie temperature among oxides. The use of Fe{sub 3}O{sub 4} thin films is therefore promising for spintronic devices such as magnetic tunnel junctions (MTJs) and magnetoresistive sensors. The structural, magnetic and magnetotransport properties of magnetite are reported to be strongly dependent on the growth conditions. We have developed a very simple deposition chamber for growing thin magnetite films via a chemical vapour deposition (CVD) process based on the Fe{sub 3}(CO){sub 12} carbonyl precursor. The structural, morphological, and magnetic properties of the as deposited Fe{sub 3}O{sub 4} films have been investigated by means of time of flight secondary ion mass spectrometry, grazing incidence x-ray diffraction, x-ray reflectivity, atomic force microscopy, conversion electron Moessbauer spectroscopy and superconducting quantum interference device magnetometry. Magnetotransport measurements show magnetoresistance up to -2.4% at RT at the maximum applied field of 1.1 T. Resistivity measurements in the 100-300 K temperature range reveal that the magnetotransport properties of the Fe{sub 3}O{sub 4} films are governed by inter-granular tunnelling of the spin-polarized electrons. The spin polarization is estimated to be around -16%. A possible route for increasing the spin-polarized performances of our magnetite films is proposed. We have also deposited Fe{sub 3}O{sub 4}/MgO/Co stacks by using a combined CVD and atomic layer-deposition process. The trilayer's hysteresis curve evidences the presence of two distinct switching fields making it promising for magnetite-based MTJ applications.

  15. CVD synthesis of polycrystalline magnetite thin films: structural, magnetic and magnetotransport properties

    Science.gov (United States)

    Mantovan, R.; Lamperti, A.; Georgieva, M.; Tallarida, G.; Fanciulli, M.

    2010-02-01

    Magnetite (Fe3O4) is predicted to be half metallic at room temperature (RT) and it shows the highest Curie temperature among oxides. The use of Fe3O4 thin films is therefore promising for spintronic devices such as magnetic tunnel junctions (MTJs) and magnetoresistive sensors. The structural, magnetic and magnetotransport properties of magnetite are reported to be strongly dependent on the growth conditions. We have developed a very simple deposition chamber for growing thin magnetite films via a chemical vapour deposition (CVD) process based on the Fe3(CO)12 carbonyl precursor. The structural, morphological, and magnetic properties of the as deposited Fe3O4 films have been investigated by means of time of flight secondary ion mass spectrometry, grazing incidence x-ray diffraction, x-ray reflectivity, atomic force microscopy, conversion electron Mössbauer spectroscopy and superconducting quantum interference device magnetometry. Magnetotransport measurements show magnetoresistance up to -2.4% at RT at the maximum applied field of 1.1 T. Resistivity measurements in the 100-300 K temperature range reveal that the magnetotransport properties of the Fe3O4 films are governed by inter-granular tunnelling of the spin-polarized electrons. The spin polarization is estimated to be around -16%. A possible route for increasing the spin-polarized performances of our magnetite films is proposed. We have also deposited Fe3O4/MgO/Co stacks by using a combined CVD and atomic layer-deposition process. The trilayer's hysteresis curve evidences the presence of two distinct switching fields making it promising for magnetite-based MTJ applications.

  16. Research Update: Large-area deposition, coating, printing, and processing techniques for the upscaling of perovskite solar cell technology

    Directory of Open Access Journals (Sweden)

    Stefano Razza

    2016-09-01

    Full Text Available To bring perovskite solar cells to the industrial world, performance must be maintained at the photovoltaic module scale. Here we present large-area manufacturing and processing options applicable to large-area cells and modules. Printing and coating techniques, such as blade coating, slot-die coating, spray coating, screen printing, inkjet printing, and gravure printing (as alternatives to spin coating, as well as vacuum or vapor based deposition and laser patterning techniques are being developed for an effective scale-up of the technology. The latter also enables the manufacture of solar modules on flexible substrates, an option beneficial for many applications and for roll-to-roll production.

  17. Carbon Nanotubes by CVD and Applications

    Science.gov (United States)

    Cassell, Alan; Delzeit, Lance; Nguyen, Cattien; Stevens, Ramsey; Han, Jie; Meyyappan, M.; Arnold, James O. (Technical Monitor)

    2001-01-01

    Carbon nanotube (CNT) exhibits extraordinary mechanical and unique electronic properties and offers significant potential for structural, sensor, and nanoelectronics applications. An overview of CNT, growth methods, properties and applications is provided. Single-wall, and multi-wall CNTs have been grown by chemical vapor deposition. Catalyst development and optimization has been accomplished using combinatorial optimization methods. CNT has also been grown from the tips of silicon cantilevers for use in atomic force microscopy.

  18. Acetylene-sourced CVD-synthesised catalytically active graphene for electrochemical biosensing.

    Science.gov (United States)

    Osikoya, Adeniyi Olugbenga; Parlak, Onur; Murugan, N Arul; Dikio, Ezekiel Dixon; Moloto, Harry; Uzun, Lokman; Turner, Anthony Pf; Tiwari, Ashutosh

    2017-03-15

    In this study, we have demonstrated the use of chemical vapour deposition (CVD) grown-graphene to develop a highly-ordered graphene-enzyme electrode for electrochemical biosensing. The graphene sheets were deposited on 1.00mm thick copper sheet at 850°C using acetylene (C2H2) as carbon source in an argon (Ar) and nitrogen (N2) atmosphere. An anionic surfactant was used to increase wettability and hydrophilicity of graphene; thereby facilitating the assembly of biomolecules on the electrode surface. Meanwhile, the theoretical calculations confirmed the successful modification of hydrophobic nature of graphene through the anionic surface assembly, which allowed high-ordered immobilisation of glucose oxidase (GOx) on the graphene. The electrochemical sensing activities of the graphene-electrode was explored as a model for bioelectrocatalysis. The bioelectrode exhibited a linear response to glucose concentration ranging from 0.2 to 9.8mM, with sensitivity of 0.087µA/µM/cm(2) and a detection limit of 0.12µM (S/N=3). This work sets the stage for the use of acetylene-sourced CVD-grown graphene as a fundamental building block in the fabrication of electrochemical biosensors and other bioelectronic devices.

  19. Faraday effect of bismuth iron garnet thin film prepared by mist CVD method

    Science.gov (United States)

    Yao, Situ; Sato, Takafumi; Kaneko, Kentaro; Murai, Shunsuke; Fujita, Koji; Tanaka, Katsuhisa

    2015-06-01

    Metastable bismuth iron garnet (BIG, an abbreviation of Bi3Fe5O12), one kind of garnet-type ferrites, is known to manifest very large Faraday rotation as well as low optical absorption in the visible to infrared region. We report on successful synthesis of thin film composed of single-phase BIG epitaxially grown on single-crystalline gadolinium gallium garnet (Gd3Ga5O12, GGG) substrate by using mist chemical vapor deposition (CVD) method, which is an emerging technique for preparation of thin films. The crystal structure, surface morphology, and magnetic, optical and magneto-optical properties of the resultant thin films have been explored. The BIG thin film has a relatively flat surface free from roughness compared to those prepared by other vapor deposition methods. Saturation magnetization is about 1620 G at room temperature, which is close to that expected from the ideal magnetic structure of BIG. The maximum value of Faraday rotation angle reaches 54.3 deg/µm at a wavelength of 424 nm. This value is rather large when compared with those reported for BIG thin films prepared by other techniques. The wavelength dependence of Faraday rotation angle is analyzed well in terms of the crystal electric field (CEF) level schema. Our result suggests that the mist CVD method is a simple and effective technique to synthesize BIG thin film with excellent magneto-optical properties.

  20. Chemical Vapour Deposition of Large Area Graphene

    DEFF Research Database (Denmark)

    Larsen, Martin Benjamin Barbour Spanget

    be eliminated. Further opportunities arise when exchanging the copper foil for copper thin film on a wafer e.g. better integration with current cleanroom processing of devices and better control over the copper crystallinity. Typical strategies for controlling the temperature during CVD fabrication of graphene...... of thermocouples leads to large variations in the grown graphene. This was solved by controlling the temperature through applying a set power to the heat source, resulting in a more stable temperature from process to process. Micro Raman spectroscopy is used to characterize the structural quality of the grown......Chemical Vapor Deposition (CVD) is a viable technique for fabrication of large areas of graphene. CVD fabrication is the most prominent and common way of fabricating graphene in industry. In this thesis I have attempted to optimize a growth recipe and catalyst layer for CVD fabrication of uniform...

  1. Effect of substrate roughness on growth of diamond by hot filament CVD

    Indian Academy of Sciences (India)

    Awadesh K Mallik; S R Binu; L N Satapathy; Chandrabhas Narayana; Md Motin Seikh; S A Shivashankar; S K Biswas

    2010-06-01

    Polycrystalline diamond coatings are grown on Si (100) substrate by hot filament CVD technique. We investigate here the effect of substrate roughening on the substrate temperature and methane concentration required to maintain high quality, high growth rate and faceted morphology of the diamond coatings. It has been shown that as we increase the substrate roughness from 0.05 m to 0.91 m (centre line average or CLA) there is enhancement in deposited film quality (Raman peak intensity ratio of 3 to non-3 content increases from 1.65 to 7.13) and the substrate temperature can be brought down to 640°C without any additional substrate heating. The coatings grown at adverse conditions for 3 deposition has cauliflower morphology with nanocrystalline grains and coatings grown under favourable 3 condition gives clear faceted grains.

  2. CVD-grown Fe2+:ZnSe polycrystals for laser applications

    Science.gov (United States)

    Firsov, K. N.; Gavrishchuk, E. M.; Ikonnikov, V. B.; Kazantsev, S. Yu; Kononov, I. G.; Rodin, S. A.; Savin, D. V.; Sirotkin, A. A.; Timofeeva, N. A.

    2017-05-01

    A technique for growing bulk zinc selenide polycrystals, doped with iron ions, by chemical vapor deposition (CVD), has been developed. It has been shown that iron is embedded in the crystal lattice of deposited zinc selenide in the optically active state of Fe2+. To improve the optical quality, the grown material was subjected to postgrowth hot isostatic pressing (HIP) treatment. It was experimentally demonstrated that the synthesised bulk crystals can be used as the active media of Fe2+:ZnSe lasers and as the passive Q-switches for three-micron lasers. The letter goes on to discuss the prospect of extending the proposed method to the synthesis of zinc sulphide doped with iron ions.

  3. Dropwise Condensation of Low Surface Tension Fluids on iCVD Grafted Polymer Films

    Science.gov (United States)

    Khalil, Karim; Gleason, Karen; Varanasi, Kripa

    2016-11-01

    A large majority of the work devoted to surface engineering for promoting dropwise condensation heat transfer has focused on steam. Much less attention has been dedicated to the condensation of low surface tension fluids such as hydrocarbons, cryogens, and fluorinated refrigerants, which are used in several industrial applications, including LNG storage and organic Rankine cycles used for heat recovery from low temperature sources such as biomass combustion, industrial waste, or geothermal heat sources. Most hydrophobic modifiers used previously to promote dropwise condensation are silane-based monolayers that have been shown to rapidly degrade under industrial conditions. Here we investigate condensation behavior of a variety of low surface tension liquids on durable covalently-grafted polymer films deposited using initiated chemical vapor deposition (iCVD) on metals such as titanium. We observe a four to seven-fold improvement in the vapor-side heat transfer coefficient by promoting dropwise condensation of low surface tension fluids on these stable films.

  4. Transport mechanisms through PE-CVD coatings: influence of temperature, coating properties and defects on permeation of water vapour

    Science.gov (United States)

    Kirchheim, Dennis; Jaritz, Montgomery; Mitschker, Felix; Gebhard, Maximilian; Brochhagen, Markus; Hopmann, Christian; Böke, Marc; Devi, Anjana; Awakowicz, Peter; Dahlmann, Rainer

    2017-03-01

    Gas transport mechanisms through plastics are usually described by the temperature-dependent Arrhenius-model and compositions of several plastic layers are represented by the CLT. When it comes to thin films such as plasma-enhanced chemical vapour deposition (PE-CVD) or plasma-enhanced atomic layer deposition (PE-ALD) coatings on substrates of polymeric material, a universal model is lacking. While existing models describe diffusion through defects, these models presume that permeation does not occur by other means of transport mechanisms. This paper correlates the existing transport models with data from water vapour transmission experiments.

  5. Low temperature growth of diamond films on optical fibers using Linear Antenna CVD system

    Science.gov (United States)

    Ficek, M.; Drijkoningen, S.; Karczewski, J.; Bogdanowicz, R.; Haenen, K.

    2016-01-01

    It is not trivial to achieve a good quality diamond-coated fibre interface due to a large difference in the properties and composition of the diamond films (or use coating even) and the optical fibre material, i.e. fused silica. One of the biggest problems is the high temperature during the deposition which influences the optical fibre or optical fibre sensor structure (e.g. long-period gratings (LPG)). The greatest advantage of a linear antenna microwave plasma enhanced chemical vapor deposition system (LA MW CVD) is the fact that it allows to grow the diamond layers at low temperature (below 300°C) [1]. High quality nanocrystalline diamond (NCD) thin films with thicknesses ranging from 70 nm to 150 nm, were deposited on silicon, glass and optical fibre substrates [2]. Substrates pretreatment by dip-coating and spin coating process with a dispersion consisting of detonation nanodiamond (DND) in dimethyl sulfoxide (DMSO) with polyvinyl alcohol (PVA) has been applied. During the deposition process the continuous mode of operation of the LA MW CVD system was used, which produces a continuous wave at a maximum power of 1.9 kW (in each antenna). Diamond films on optical fibres were obtained at temperatures below 350°C, providing a clear improvement of results compared to our earlier work [3]. The samples were characterized by scanning electron microscopy (SEM) imaging to investigate the morphology of the nanocrystalline diamond films. The film growth rate, film thickness, and optical properties in the VIS-NIR range, i.e. refractive index and extinction coefficient will be discussed based on measurements on reference quartz plates by using spectroscopic ellipsometry (SE).

  6. Low temperature metal free growth of graphene on insulating substrates by plasma assisted chemical vapor deposition

    Science.gov (United States)

    Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

    2017-03-01

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650 °C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

  7. A new CVD Diamond Mosaic-Detector for (n,$\\alpha$) Cross-Section Measurements at the n_TOF Experiment at CERN

    CERN Document Server

    Weiss, C; Guerrero, C; Altstadt, S; Andrzejewski, J; Audouin, L; Badurek, G; Barbagallo, M; Becares, V; Becvar, F; Belloni, F; Berthoumieux, E; Billowes, J; Boccone, V; Bosnar, D; Brugger, M; Calviani, M; Calvino, F; Cano-Ott, D; Carrapico, C; Cerutti, F; Chiaveri, E; Chin, M; Colonna, N; Cortes, G; Cortes-Giraldo, M.A; Diakaki, M; Domingo-Pardo, C; Duran, I; Dressler, R; Dzysiuk, N; Eleftheriadis, C; Ferrari, A; Fraval, K; Ganesan, S; Garcia, A.R; Giubrone, G; Gomez-Hornillos, M.B; Goncalves, I.F; Gonzalez-Romero, E; Gunsing, F; Gurusamy, P; Hernandez-Prieto, A; Jenkins, D.G; Jericha, E; Kadi, Y; KäPpeler, F; Karadimos, D; Kivel, N; Koehler, P; Kokkoris, M; Krticka, M; Kroll, J; Lampoudis, C; Langer, C; Leal-Cidoncha, E; Lederer, C; Leeb, H; Leong, L.S; Losito, R; Mallick, A; Manousos, A; Marganiec, J; Martinez, T; Massimi, C; Mastinu, P.F; Mastromarco, M; Meaze, M; Mendoza, E; Mengoni, A; Milazzo, P.M; Mingrone, F; Mirea, M; Mondalaers, W; Paradela, C; Pavlik, A; Perkowski, J; Plompen, A; Praena, J; Quesada, J.M; Rauscher, T; Reifarth, R; Riego, A; Robles, M.S; Roman, F; Rubbia, C; Sabate-Gilarte, M; Sarmento, R; Saxena, A; Schillebeeckx, P; Schmidt, S; Schumann, D; Tagliente, G; Tain, J.L; Tarrio, D; Tassan-Got, L; Tsinganis, A; Valenta, S; Vannini, G; Variale, V; Vaz, P; Ventura, A; Versaci, R; Vermeulen, M.J; Vlachoudis, V; Vlastou, R; Wallner, A; Ware, T; Weigand, M; Wright, T; Zugec, P

    2013-01-01

    At the n_TOF experiment at CERN a dedicated single-crystal chemical vapor deposition (sCVD) Diamond Mosaic-Detector has been developed for (n,$\\alpha$) cross-section measurements. The detector, characterized by an excellent time and energy resolution, consists of an array of 9 sCVD diamond diodes. The detector has been characterized and a cross-section measurement has been performed for the $^{59}$Ni(n,$\\alpha$)$^{56}$Fe reaction in 2012. The characteristics of the detector, its performance and the promising preliminary results of the experiment are presented.

  8. Catalytic Synthesis of Substrate-Free, Aligned and Tailored High Aspect Ratio Multiwall Carbon Nanotubes in an Ultrasonic Atomization Head CVD Reactor

    OpenAIRE

    Fahad Ali Rabbani; Zuhair Omar Malaibari; Muataz Ali Atieh; Ammar Jamie

    2016-01-01

    Chemical vapor deposition (CVD) method has proven its benchmark, over other methods, for the production of different types of carbon nanotubes (CNT) on commercial and lab scale. In this study, an injection vertical CVD reactor fitted with an ultrasonic atomization head was used in a pilot-plant scale (height 274 cm, radius 25 cm) for semicontinuous production of multiwall carbon nanotubes (MWCNTs). p-Xylene was used as a hydrocarbon precursor in which ferrocene was dissolved and provided the ...

  9. High-Resolution Energy and Intensity Measurements with CVD Diamond at REX-ISOLDE

    CERN Document Server

    Griesmayer, E; Dobos, D; Wenander, F; Bergoz, J; Bayle, H; Frais-Kölbl, H; Leinweber, J; Aumeyr, T; CERN. Geneva. BE Department

    2009-01-01

    A novel beam instrumentation device for the HIE-REX (High In-tensity and Energy REX) upgrade has been developed and tested at the On-Line Isotope Mass Separator ISOLDE, located at the European Laboratory for Particle Physics (CERN). This device is based on CVD diamond detector technology and is used for measuring the beam intensity, particle counting and measuring the energy spectrum of the beam. An energy resolution of 0.6% was measured at a carbon ion energy of 22.8 MeV. This corresponds to an energy spread of ± 140 keV.

  10. Iron (III) chloride doping of CVD graphene.

    Science.gov (United States)

    Song, Yi; Fang, Wenjing; Hsu, Allen L; Kong, Jing

    2014-10-03

    Chemical doping has been shown as an effective method of reducing the sheet resistance of graphene. We present the results of our investigations into doping large area chemical vapor deposition graphene using Iron (III) Chloride (FeCl(3)). It is shown that evaporating FeCl(3) can increase the carrier concentration of monolayer graphene to greater than 10(14) cm(-2) and achieve resistances as low as 72 Ω sq(-1). We also evaluate other important properties of the doped graphene such as surface cleanliness, air stability, and solvent stability. Furthermore, we compare FeCl(3) to three other common dopants: Gold (III) Chloride (AuCl(3)), Nitric Acid (HNO(3)), and TFSA ((CF(3)SO(2))(2)NH). We show that compared to these dopants, FeCl(3) can not only achieve better sheet resistance but also has other key advantages including better solvent stability.

  11. Investigation on the priming effect of a CVD diamond microdosimeter

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    CVD diamond microdosimeter is an ideal substitute of common Si.GaAs detector for extremely strong radiation experimental environment due to its high band gap energy, fast charge collection, low dielectric constant and hardness. In order to improve its character, a CVD diamond microdosimeter was irradiated by a proton dose of 46 Gy, and a lateral micro-ion beam induced charge (IBIC) technique was utilized to characterize it in low beam current (~fA). It was clearly shown that charge collection efficiency and energy resolution were greatly improved after proton irradiation of that dose. Moreover, the homogeneities of both its counting performance and collection efficiency were enhanced. Proton irradiation of 46 Gy has been proved to be an effective way to prime a CVD diamond.

  12. Investigation on the priming effect of a CVD diamond microdosimeter

    CERN Document Server

    Lu Rong Rong; Jiang Da; Li Xiao Lin; Zhu Jie Qing

    2002-01-01

    CVD diamond microdosimeter is an ideal substitute of common Si, GaAs detector for extremely strong radiation experimental environmental due to its high band gap energy, fast charge collection, low dielectric constant and hardness. In order to improve its character, a CVD diamond microdosimeter was irradiated by a proton dose of 46 Gy, and a lateral micro-ion beam induced charge (IBIC) technique was utilized to characterize it in low beam current (approx fA). It was clearly shown that charge collection efficiency and energy resolution were greatly improved after proton irradiation of that dose. Moreover, the homogeneities of both its counting performance and collection efficiency were enhanced. Proton irradiation of 46 Gy has been proved to be an effective way to prime a CVD diamond

  13. TOF MS Investigation of Nickel Oxide CVD

    Science.gov (United States)

    Kondrateva, Anastasia S.; Mishin, Maxim V.; Alexandrov, Sergey E.

    2017-08-01

    NiO layers were deposited by metal-organic chemical vapor deposition using bis-(ethylcyclopentadienyl) nickel (EtCp)2Ni and oxygen or ozone. As a continuation of kinetic study of NiO MOCVD the gas-phase, transformations of (EtCp)2Ni were studied in the temperature range of 380-830 K. Time of reactions corresponding to the residence time of the gas stream in hot zone of the reactor was about 0.1 s under conditions studied. The interaction of (EtCp)2Ni with oxygen started at 450 K and its conversion rate reached the maximum at 700 K. The interaction of (EtCp)2Ni with ozone started at 400 K and its conversion rate reached the maximum at 600 K. Transformations of the gas phase with the temperature in the reaction zone were studied, the model reaction schemes illustrating (EtCp)2Ni transformations in the reaction systems containing oxygen and ozone have developed. In the reaction system (EtCp)2Ni-O2-Ar the main gas-phase products at 380-500 K were CO, CO2, HCO, C2H5OH, CpCOOH, and CpO. Formation of the C2H2O, C3H4O, and C5H8O was found at 630-830 K. The same gas-phase species, (C4H3O)2Ni and dialdehydes was formed in the reaction system (EtCp)2Ni-O3-O2-Ar. [Figure not available: see fulltext.

  14. Low-temperature growth of nitrogen-doped carbon nanofibers by acetonitrile catalytic CVD using Ni-based catalysts

    Science.gov (United States)

    Iwasaki, Tomohiro; Makino, Yuri; Fukukawa, Makoto; Nakamura, Hideya; Watano, Satoru

    2016-11-01

    To synthesize nitrogen-doped carbon nanofibers (N-CNFs) at high growth rates and low temperatures less than 673 K, nickel species (metallic nickel and nickel oxide) supported on alumina particles were used as the catalysts for an acetonitrile catalytic chemical vapor deposition (CVD) process. The nickel:alumina mass ratio in the catalysts was fixed at 0.05:1. The catalyst precursors were prepared from various nickel salts (nitrate, chloride, sulfate, acetate, and lactate) and then calcined at 1073 K for 1 h in oxidative (air), reductive (hydrogen-containing argon), or inert (pure argon) atmospheres to activate the nickel-based catalysts. The effects of precursors and calcination atmosphere on the catalyst activity at low temperatures were studied. We found that the catalysts derived from nickel nitrate had relatively small crystallite sizes of nickel species and provided N-CNFs at high growth rates of 57 ± 4 g-CNF/g-Ni/h at 673 K in the CVD process using 10 vol% hydrogen-containing argon as the carrier gas of acetonitrile vapor, which were approximately 4 times larger than that of a conventional CVD process. The obtained results reveal that nitrate ions in the catalyst precursor and hydrogen in the carrier gas can contribute effectively to the activation of catalysts in low-temperature CVD. The fiber diameter and nitrogen content of N-CNFs synthesized at high growth rates were several tens of nanometers and 3.5 ± 0.3 at.%, respectively. Our catalysts and CVD process may lead to cost reductions in the production of N-CNFs.

  15. Low-temperature growth of nitrogen-doped carbon nanofibers by acetonitrile catalytic CVD using Ni-based catalysts

    Directory of Open Access Journals (Sweden)

    Tomohiro Iwasaki

    2016-06-01

    Full Text Available Abstract To synthesize nitrogen-doped carbon nanofibers (N-CNFs at high growth rates and low temperatures less than 673 K, nickel species (metallic nickel and nickel oxide supported on alumina particles were used as the catalysts for an acetonitrile catalytic chemical vapor deposition (CVD process. The nickel:alumina mass ratio in the catalysts was fixed at 0.05:1. The catalyst precursors were prepared from various nickel salts (nitrate, chloride, sulfate, acetate, and lactate and then calcined at 1073 K for 1 h in oxidative (air, reductive (hydrogen-containing argon, or inert (pure argon atmospheres to activate the nickel-based catalysts. The effects of precursors and calcination atmosphere on the catalyst activity at low temperatures were studied. We found that the catalysts derived from nickel nitrate had relatively small crystallite sizes of nickel species and provided N-CNFs at high growth rates of 57 ± 4 g-CNF/g-Ni/h at 673 K in the CVD process using 10 vol% hydrogen-containing argon as the carrier gas of acetonitrile vapor, which were approximately 4 times larger than that of a conventional CVD process. The obtained results reveal that nitrate ions in the catalyst precursor and hydrogen in the carrier gas can contribute effectively to the activation of catalysts in low-temperature CVD. The fiber diameter and nitrogen content of N-CNFs synthesized at high growth rates were several tens of nanometers and 3.5 ± 0.3 at.%, respectively. Our catalysts and CVD process may lead to cost reductions in the production of N-CNFs.

  16. Chemical reactivity of CVC and CVD SiC with UO{sub 2} at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Silva, Chinthaka M., E-mail: silvagw@ornl.gov [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Katoh, Yutai [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Voit, Stewart L. [Fusion and Materials for Nuclear Systems Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Snead, Lance L. [Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States)

    2015-05-15

    Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO{sub 2} pellets and evaluated for their potential chemical reaction with UO{sub 2}. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO{sub 2} was observed at comparatively low temperatures of 1100 and 1300 °C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity. However, both CVD and CVC SiCs showed some reaction with UO{sub 2} at a higher temperature (1500 °C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 °C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi{sub 2}, and U{sub 3}Si{sub 2} as a result of SiC reaction with UO{sub 2}.

  17. Electrocatalysts with platinum, cobalt and nickel preparations by mechanical alloyed and CVD for the reaction of oxygen reduction; Electrocatalizadores a base de platino, cobalto y niquel preparados por aleado mecanico y CVD para la reaccion de reduccion de oxigeno

    Energy Technology Data Exchange (ETDEWEB)

    Garcia C, M. A. [ININ, 52750 La Marquesa, Estado de Mexico (Mexico)

    2008-07-01

    In this research, the molecular oxygen reduction reaction (ORR) was investigated on electrocatalysts of Co, Ni, Pt and their alloys CoNi, PtCo, PtNi and PtCoNi by using H{sub 2}SO{sub 4} 0.5 and KOH 0.5 M solutions as electrolytes. The electrocatalysts were synthesized by Mechanical Alloying (MA) and Chemical Vapor Deposition (CVD) processes. For MA, metallic powders were processed during 20 h of milling in a high energy SPEX 8000 mill. For CVD, a hot-wall reactor was utilized and Co, Ni and Pt acetilactetonates were used as precursors. Films were deposited at a total pressure of 1 torr and temperatures of 400-450 C. Electrocatalysts were characterized by X-Ray Diffraction (XRD). Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Energy Dispersive X-Ray Spectroscopy (EDS). Electrocatalysts prepared by mechanical alloying showed a homogeneously dispersed agglomeration of particles with nano metric size. Electrocatalysts obtained by CVD showed, in some cases, non uniform films, with particles of nano metric size, as well. The electrocatalytic performance was evaluated by using the Rotating Disk Electrode technique (RDE). Electrocatalysts prepared by MA showed higher activity than those obtained by CVD. All electrocatalysts were evaluated in alkaline media. Only electrocatalysts containing Pt were evaluated in acid media, because those materials with Co, Ni and their alloys showed instability in acidic media. Most electrocatalysts followed a mechanism for the ORR producing a certain proportion of H{sub 2}O{sub 2}. All electrocatalysts, exhibited a fair or good electrocatalytic activity in comparison with other similar reported materials. It was found that MA and CVD are appropriate processes to prepare electrocatalysts for the ORR with particles of nano metric size and performing with an acceptable catalytic activity. PtCoNi 70-23-7% by MA and PtCoNi-CVD electrocatalysts showed the highest activity in alkaline media, while in acidic

  18. Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

    Energy Technology Data Exchange (ETDEWEB)

    Mohammadi, V., E-mail: V.Mohammadi@tudelft.nl; Nihtianov, S. [Department of Microelectronics, Delft University of Technology, Mekelweg 4, 2628 CD, Delft (Netherlands)

    2016-02-15

    The lateral gas phase diffusion length of boron atoms, L{sub B}, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B{sub 2}H{sub 6}) is reported. The value of L{sub B} is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the boron deposition temperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the boron deposition is investigated on the micro scale. A L{sub B} = 2.2 mm was determined for boron deposition at 700 °C, while a L{sub B} of less than 1 mm was observed at temperatures lower than 500 °C.

  19. A design of experiments investigation of the effects of synthesis conditions on the quality of CVD graphene

    Science.gov (United States)

    Shanmugam, Ramakrishnan; Rangarajan, Murali; Devanathan, Sriram; Sathe, Vasant G.; Senthilkumar, R.; Kothurkar, Nikhil K.

    2016-12-01

    Control over quality of graphene and the number of layers is vital for various applications. This is the first methodical report which quantitatively relates the process conditions in the chemical vapor deposition (CVD) of graphene with crystallinity and number of graphene layers, using a design of experiments approach. This report investigates the effects of three vital synthesis parameters namely (i) carbon source (benzene, naphthalene and anthracene) (ii) synthesis temperature and (iii) mass flow rate of the carbon source, on the crystallinity and the number of layers of graphene, as inferred through micro-Raman analysis. These results give a preliminary indication of how the quality of graphene synthesized through CVD could be controlled. These results throw light on further experiments, simulations, and analysis needed to precisely determine how to control the synthesis of graphene.

  20. Adhesive strength of CVD diamond thin films quantitatively measured by means of the bulge and blister test

    Institute of Scientific and Technical Information of China (English)

    Daohui Xiang; Ming Chen; Yuping Ma; Fanghong Sun

    2008-01-01

    Large advancement has been made in understanding the nucleation and growth of chemical vapor deposition (CVD) diamond, but the adhesion of CVD diamond to substrates is poor and there is no good method for quantitative evaluation of the adhesive strength. The blister test is a potentially powerful tool for characterizing the mechanical properties of diamond films. In this test, pressure was applied on a thin membrane and the out-of-plane deflection of the membrane center was measured. The Young's modulus, residual stress, and adhesive strength were simultaneously determined using the load-deflection behavior of a membrane. The free-standing window sample of diamond thin films was fabricated by means of photolithography and anisotropic wet etching. The research indicates that the adhesive strength of diamond thin films is 4.28±0.37J/m2. This method uses a simple apparatus, and the fabrication of samples is very easy.

  1. Tip-based chemical vapor deposition with a scanning nano-heater

    NARCIS (Netherlands)

    Gaitas, A.

    2013-01-01

    In this preliminary effort, a moving nano-heater directs a chemical vapor deposition reaction (nano-CVD) demonstrating a tip-based nanofabrication (TBN) method. Localized nano-CVD of copper (Cu) and copper oxide (CuO) on a silicon (Si) and silicon oxide (SiO2) substrate from gasses, namely sublimate

  2. Atmospheric deposition of rare earth elements in Albania studied by the moss biomonitoring technique, neutron activation analysis and GIS technology.

    Science.gov (United States)

    Allajbeu, Sh; Yushin, N S; Qarri, F; Duliu, O G; Lazo, P; Frontasyeva, M V

    2016-07-01

    Rare earth elements (REEs) are typically conservative elements that are scarcely derived from anthropogenic sources. The mobilization of REEs in the environment requires the monitoring of these elements in environmental matrices, in which they are present at trace level. The determination of 11 REEs in carpet-forming moss species (Hypnum cupressiforme) collected from 44 sampling sites over the whole territory of the country were done by using epithermal neutron activation analysis (ENAA) at IBR-2 fast pulsed reactor in Dubna. This paper is focused on REEs (lanthanides) and Sc. Fe as typical consistent element and Th that appeared good correlations between the elements of lanthanides are included in this paper. Th, Sc, and REEs were never previously determined in the air deposition of Albania. Descriptive statistics were used for data treatment using MINITAB 17 software package. The median values of the elements under investigation were compared with those of the neighboring countries such as Bulgaria, Macedonia, Romania, and Serbia, as well as Norway which is selected as a clean area. Geographical distribution maps of the elements over the sampled territory were constructed using geographic information system (GIS) technology. Geochemical behavior of REEs in moss samples has been studied by using the ternary diagram of Sc-La-Th, Spider diagrams and multivariate analysis. It was revealed that the accumulation of REEs in current mosses is associated with the wind-blowing metal-enriched soils that is pointed out as the main emitting factor of the elements under investigation.

  3. Electrocatalytic characterization and dye degradation of Nano-TiO{sub 2} electrode films fabricated by CVD

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Jih-Hsing, E-mail: changjh@cyut.edu.tw [Department of Environmental Engineering and Management, Chaoyang University of Technology, 168 JiFong E. Rd., WuFong Township, 41349 Taichung County, Taiwan (China); Ellis, Amanda V. [Flinders University, School of Chemistry, Physics and Earth Sciences, , GPO Box 2100, Bedford Park, Adelaide S.A. 5042 (Australia); Hsieh, Yung-Hsu; Tung, Cheng-Hung; Shen, Shan-Yi [Department of Environmental Engineering, National Chung Hsing University, 250, Kuo Kuang Road, Taichung, 40277, Taiwan (China)

    2009-11-01

    A 20-40 nm anatase-titania film on a titanium electrode was fabricated using chemical vapor deposition (CVD). The film was characterized using field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), and atomic force microscopy (AFM). The CVD deposition time and number of deposition coatings were evaluated to establish the appropriate film fabrication parameters. Results indicate that two coatings at a deposition time of 6 h each produced the best nano-TiO{sub 2} electrode films (NTEFs) with an even distribution of ca. 20 nm diameter nanoparticles in the anatase lattice. The NTEF was tested as an electrocatalytic anode to investigate the degradation efficiency in treating methyl orange dye wastewater. A high removal efficiency of methyl orange dye and total organic carbon (TOC) of 97 and 56%, respectively; was achieved using a current density of 20 mA cm{sup -2} for 160 min. Cyclic voltammetry showed that the electrochemical degradation reaction rate at the NTEF surface was predominately driven by molecular diffusion. The electrocatalytic decomposition rate of organic pollutants at the NTEF is controlled by mass transport, which was associated with the nanostructure of the electrocatalytic electrode.

  4. Nanomorph Silicon Thin Films Prepared by Using an HW-MWECR CVD System

    Institute of Scientific and Technical Information of China (English)

    HU Yue-Hui; MA Zhan-Jie; ZHOU Huai-En; ZHU Xiu-Hong; CHEN Guang-Hua; ZHOU Jian-Er; RONG Yan-Dong; LI Ying; SONG Xue-Mei; ZHANG Wen-Li; DING Yi; GAO Zhuo

    2005-01-01

    @@ We have prepared hydrogenated nano-amorph silicon (na-Si:H) films by using a hot-wire-assisted microwave electron-cyclotron-resonance (HW-MWECR) chemical vapour deposition (CVD) system. The films are deposited in two steps: in the first 9min, a hydrogenated amorphous silicon layer is deposited by using hydrogen-diluted silane with a concentration of SiH4/(SiH4+H2) = 20%, and then a nanocrystalline silicon (nc-Si) layer is deposited by using various highly hydrogen-diluted silane. The Raman TO-like mode peak of the films was found in the range 497-508 cm-1. When the silane concentration used for preparation of the nc-Si layer is 14.3%, the film has a large crystalline volume fraction of 65.4%, a wide optical band gap of 1.89eV and a low hydrogen content of 9.5at.%. Moreover, the na-Si:H films rather than nc-Si possess high photosensitivity of about 15.

  5. Influence of tungsten on the carbon nanotubes growth by CVD process

    Energy Technology Data Exchange (ETDEWEB)

    Escobar, Mariano [Instituto de Fisicoquimica de Materiales, Ambiente y Energia, CONICET-UBA, Pabellon II, Ciudad Universitaria (1428) Bs As (Argentina); LP and MC, Dep. De Fisica, FCEyN-UBA, Pabellon 1, Ciudad Universitaria (1428) Bs As (Argentina)], E-mail: mescobar@qi.fcen.uba.ar; Rubiolo, Gerardo H. [LP and MC, Dep. De Fisica, FCEyN-UBA, Pabellon 1, Ciudad Universitaria (1428) Bs As (Argentina); Unidad de Actividad Materiales, CNEA, Av. Gral. Paz 1499, San Martin (1650), Bs As (Argentina); Moreno, M. Sergio [Centro Atomico Bariloche, (8400) S.C. de Bariloche, Rio Negro (Argentina); Goyanes, Silvia [LP and MC, Dep. De Fisica, FCEyN-UBA, Pabellon 1, Ciudad Universitaria (1428) Bs As (Argentina); Candal, Roberto [Instituto de Fisicoquimica de Materiales, Ambiente y Energia, CONICET-UBA, Pabellon II, Ciudad Universitaria (1428) Bs As (Argentina)

    2009-06-24

    The effect of tungsten (W) on the growth of multi-walled carbon nanotubes (MWNTs) using the chemical vapour deposition (CVD) process over a metal Fe-W catalyst incorporated into a silica matrix is reported. A W molar content in Fe/SiO{sub 2} up to 10% was studied. The incorporation of only 2% of W substantially modifies the crystalline phases and the crystalline degree of the catalyst during the MWNTs synthesis. This fact seems to have a strong influence on the type and yield of the carbonaceous species obtained by the CVD of acetylene, at 600 deg. C and 180 Torr, over each catalyst. Tungsten interacts with iron within the matrix, diminishing the catalytic activity of the metal nanoparticles, and both, carbon nanotubes and carbon nanofibers, are obtained when tungsten is present. The results obtained support the hypothesis of a base growth model for carbon nanotubes indicating a strong interaction between silica matrix and Fe/W nanoparticles, independently of the content of W.

  6. High-speed roll-to-roll manufacturing of graphene using a concentric tube CVD reactor

    Science.gov (United States)

    Polsen, Erik S.; McNerny, Daniel Q.; Viswanath, B.; Pattinson, Sebastian W.; John Hart, A.

    2015-01-01

    We present the design of a concentric tube (CT) reactor for roll-to-roll chemical vapor deposition (CVD) on flexible substrates, and its application to continuous production of graphene on copper foil. In the CTCVD reactor, the thin foil substrate is helically wrapped around the inner tube, and translates through the gap between the concentric tubes. We use a bench-scale prototype machine to synthesize graphene on copper substrates at translation speeds varying from 25 mm/min to 500 mm/min, and investigate the influence of process parameters on the uniformity and coverage of graphene on a continuously moving foil. At lower speeds, high-quality monolayer graphene is formed; at higher speeds, rapid nucleation of small graphene domains is observed, yet coalescence is prevented by the limited residence time in the CTCVD system. We show that a smooth isothermal transition between the reducing and carbon-containing atmospheres, enabled by injection of the carbon feedstock via radial holes in the inner tube, is essential to high-quality roll-to-roll graphene CVD. We discuss how the foil quality and microstructure limit the uniformity of graphene over macroscopic dimensions. We conclude by discussing means of scaling and reconfiguring the CTCVD design based on general requirements for 2-D materials manufacturing. PMID:25997124

  7. Computation of flow and thermal fields in a model CVD reactor

    Indian Academy of Sciences (India)

    Vishwadeep Saxena; K Muralidhar; V Eswaran

    2002-12-01

    Mixing of coaxial jets within a tube in the presence of blockage has been numerically studied. This configuration is encountered during the modelling of flow and heat transfer in CVD (chemical vapour deposition) reactors. For the conditions prevailing in the reactor, the Reynolds numbers are low and flow can be taken to be laminar and incompressible. The unsteady forms of the governing equations have been solved by a finite volume method that can treat complex three-dimensional geometries. The algorithm is a two-step procedure, wherein the first step predicts the velocity field using an assumed pressure field. The second step corrects the fields using a Poisson equation to obtain the pressure corrections. Advection terms have been treated by a hybrid upwind-central difference technique. The computer code developed is fully three-dimensional, though most computations of the present study have been carried out for two-dimensional geometry. Results have been obtained in the form of velocity vector plots, wall shear stress variation on the block and the tube wall, isotherms and temperature profiles. The flow and heat transfer characteristics of jet mixing have been explored in terms of the Reynolds number, the jet velocity ratio, the axial position of the block, and the blockage ratio. The results obtained show that a proper combination of the process parameters can lead to an improved performance of the CVD reactor.

  8. CVD Method for Carbon Nanotubes Preparation Based on Orthogonal Experiment Using C3H6

    Institute of Scientific and Technical Information of China (English)

    SU Xunwen; JIANG Fang

    2015-01-01

    Carbon nanotubes (CNTs) have potential applications in many fields, chemical vapor deposition (CVD) is an effective method for CNTs preparation. By CVD, the catalytic pyrolysis temperature, pyrolysis time and the size of the raw gas lfow have a great inlfuence on yield rate of CNTs and their form. In this paper, the orthogonal experiment analysis method is used for studying the inlfuence factors of yield rate of CNTs. Research results show that, in the suitable temperature range of preparing CNTs, there is relatively more CNTs with excellent morphology, otherwise, if the temperature is too low, the growth of CNTs will not be sufifcient; if the temperature is too high, then CNTs will be generated with excessive defects; with longer growth time of suitable pyrolysis of CNTs, higher yield of CNTs will be obtained; CNTs morphology with reaction time is not proportional; too low or too high raw gas lfow rate is not conducive to the growth of CNTs. We have found the optimum conditions for the CNTs preparation: pyrolysis temperature 680℃, pyrolysis time 35 min, propylene lfow rate of 180 mL/min. The results have a reference value for the preparation of CNTS and their composites.

  9. VO{sub x} effectively doping CVD-graphene for transparent conductive films

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Qinghua; Shi, Liangjing [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Zhang, Qinghong [State Key Laboratory of Modification of Chemical Fibers and Polymer Materials, College of Material Science and Engineering, Donghua University, 2999 North Renmin Road, Shanghai 201620 (China); Wang, Weiqi; Zheng, Huifeng [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Zhang, Yuzhi [The Key Laboratory of Inorganic Coating Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences,1295 Dingxi Road, Shanghai 200050 (China); Liu, Yangqiao, E-mail: yqliu@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China); Sun, Jing, E-mail: jingsun@mail.sic.ac.cn [State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)

    2016-11-30

    Highlights: • Doping process operated easily. • Sheet resistance decreased efficiently after doping. • Sheet resistance of doped graphene is stable after exposed in the air. • Mechanism of doping process is studied. - Abstract: Chemical vapor deposition(CVD)-synthesized graphene is potentially an alternative for tin-doped indium oxide (ITO) transparent conductive films (TCFs), however its sheet resistance is still too high to meet many demands. Vanadium oxide has been widely applied as smart window materials, however, no study has been reported to use it as dopant to improve the conductivity of graphene TCFs. In this study, we firstly reported that VO{sub x} doping can effectively lower the sheet resistance of CVD-graphene films while keeping its good optical properties, whose transmittance is as high as 86–90%. The optimized VO{sub x}-doped graphene exhibits a sheet resistance as low as 176 Ω/□, which decreases by 56% compared to the undoped graphene films. The doping process is convenient, stable, economical and easy to operate. What is more, VO{sub x} can effectively increase the work function(WF) of the film, making it more appropriate for use in solar cells. The evolution of the VO{sub x} species annealed at different temperatures below 400 °C has been detailed studied for the first time, based on which the doping mechanism is proposed. The prepared VO{sub x} doped graphene is expected to be a promising candidate for transparent conductive film purposes.

  10. Optimization of CVD parameters for long ZnO NWs grown on ITO/glass substrate

    Indian Academy of Sciences (India)

    ABDULQADER D FAISAL

    2016-12-01

    The optimization of chemical vapour deposition (CVD) parameters for long and vertically aligned (VA) ZnO nanowires (NWs) were investigated. Typical ZnO NWs as a single crystal grown on indium tin oxide (ITO)-coated glass substrate were successfully synthesized. First, the conducted side of ITO–glass substrate was coated with zinc acetate dihydrate to form seed layer of ZnO nanocrystals. Double zone tube furnace connected to vacuum pump was used for ZnO growth process. Zn metal powder was positioned at the first zone at temperature 900$^{\\circ}$C. The ITO–glass substrate with pre-coated seed layer was then located in the second zone of tube furnace at growth temperature of 550$^{\\circ}$C. The growth of ZnO NWs was controlled under constant concentration of seed layer, while other parameters such as argon and oxygen flow rates, substrate position, time and oxygen flow rate were varied.The VA ZnO NWs were finally characterized by scanning electron microscopy, X-ray diffractometer and high-resolution transmission electron microscope equipped with energy-dispersive X-ray spectroscopy. The results showthat long and VA ZnO NWs were single crystalline with hexagonal wurtzite structure. The ultimate length and average diameter of ZnO NWs were 10 $\\mu$m and 50–100 nm, respectively. These were achieved under optimized CVD growth parameters. The mechanism of vertical growth model of ZnO NWs is also discussed.

  11. Unravelling merging behaviors and electrostatic properties of CVD-grown monolayer MoS2 domains.

    Science.gov (United States)

    Hao, Song; Yang, Bingchu; Gao, Yongli

    2016-08-28

    The presence of grain boundaries is inevitable for chemical vapor deposition (CVD)-grown MoS2 domains owing to various merging behaviors, which greatly limits its potential applications in novel electronic and optoelectronic devices. It is therefore of great significance to unravel the merging behaviors of the synthesized polygon shape MoS2 domains. Here we provide systematic investigations of merging behaviors and electrostatic properties of CVD-grown polycrystalline MoS2 crystals by multiple means. Morphological results exhibit various polygon shape features, ascribed to polycrystalline crystals merged with triangle shape MoS2 single crystals. The thickness of triangle and polygon shape MoS2 crystals is identical manifested by Raman intensity and peak position mappings. Three merging behaviors are proposed to illustrate the formation mechanisms of observed various polygon shaped MoS2 crystals. The combined photoemission electron microscopy and kelvin probe force microscopy results reveal that the surface potential of perfect merged crystals is identical, which has an important implication for fabricating MoS2-based devices.

  12. Surface Study of Carbon Nanotubes Prepared by Thermal-CVD of Camphor Precursor

    Science.gov (United States)

    Azira, A. A.; Rusop, M.

    2010-03-01

    Surface morphology study on the influence of starting carbon materials by using thermal chemical vapor deposition (Thermal-CVD) to produced carbon nanotubes (CNTs) is investigated. The CNTs derived from camphor were synthesized as the precursor material due to low sublimation temperature, which indirectly maybe cost effective. The major parameters are also evaluated in order to obtain high-yield and high-quality CNTs. The prepared CNTs are examined using field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscope (HR-TEM) to determine the microstructure of nanocarbons. The FESEM investigation of the CNTs formed on the support catalysts provides evidence that camphor is suitable as a precursor material for nanotubes formation. The high-temperature graphitization process induced by the Thermal-CVD enables the hydrocarbons to act as carbon sources and changes the aromatic species into the layered graphite structure of CNTs. The camphoric hydrocarbons not only found acts as the precursors but also enhances the production rate and the quality of CNTs.

  13. Large scale integration of CVD-graphene based NEMS with narrow distribution of resonance parameters

    Science.gov (United States)

    Arjmandi-Tash, Hadi; Allain, Adrien; (Vitto Han, Zheng; Bouchiat, Vincent

    2017-06-01

    We present a novel method for the fabrication of the arrays of suspended micron-sized membranes, based on monolayer pulsed-CVD graphene. Such devices are the source of an efficient integration of graphene nano-electro-mechanical resonators, compatible with production at the wafer scale using standard photolithography and processing tools. As the graphene surface is continuously protected by the same polymer layer during the whole process, suspended graphene membranes are clean and free of imperfections such as deposits, wrinkles and tears. Batch fabrication of 100 μm-long multi-connected suspended ribbons is presented. At room temperature, mechanical resonance of electrostatically-actuated devices show narrow distribution of their characteristic parameters with high quality factor and low effective mass and resonance frequencies, as expected for low stress and adsorbate-free membranes. Upon cooling, a sharp increase of both resonant frequency and quality factor is observed, enabling to extract the thermal expansion coefficient of CVD graphene. Comparison with state-of-the-art graphene NEMS is presented.

  14. Facet-dependent study of efficient growth of graphene on copper by ethanol-CVD

    Indian Academy of Sciences (India)

    Anil Kumar Singh; Anjan Kumar Gupta

    2015-12-01

    The growth of graphene by chemical vapour deposition (CVD) on copper is the most promising scalable method for high-quality graphene. The use of ethanol, an economic and safe precursor, for the fast growth of graphene on copper by a home-built CVD set-up was analysed. Full coverage of uniform single-layer graphene with high crystalline quality was found on $\\langle100\\rangle$ textured Cu foils in just 30 s. The nucleation density of graphene islands was found to be independent of facets but the island shape showed facet dependence. Diamond-like islands were observed on Cu(100) facets while random shaped islands were seen on other facets. The last observation is discussed in terms of a competition between graphene-island growth and its relaxation rate on different facets. On Cu(100) slower island growth as compared to its relaxation leads to equilibrium shapes as opposed to other facets. Further, an observed evolution in graphene contrast in electron micrographs with time on different facets was discussed in terms of oxygen diffusion between graphene and Cu.

  15. Synthesis of nanometal oxides and nanometals using hot-wire and thermal CVD

    Energy Technology Data Exchange (ETDEWEB)

    Mitra, S. [Department of Physics and Engineering Physics, University of Tulsa, Tulsa, OK 74104 (United States)], E-mail: saibal-mitra@utulsa.edu; Sridharan, K.; Unnam, J. [Department of Chemical Engineering, University of Tulsa, Tulsa, OK 74104 (United States); Ghosh, K. [Department of Physics, Astronomy, and Materials Science, Missouri State University, MO65897 (United States)

    2008-01-15

    We report the synthesis of nano-oxides of molybdenum, tungsten, and zinc. Molybdenum oxide (MoO{sub 3}) and tungsten oxide (WO{sub x}) were produced by hot-wire CVD with molybdenum and tungsten filaments, respectively while zinc oxide (ZnO) was produced by thermal CVD. When high purity molybdenum wire was oxidized at ambient system atmosphere, nanorods and nanostraws of MoO{sub 3} with length ranging from {approx} 20-80 nm and diameters ranging from {approx} 5-15 nm were produced. Also, the oxidation of the tungsten filament led to the deposition of tungsten oxide nanorods (10-25 nm diameter and 75-90 nm long) and nanospheres with diameters of {approx} 60 nm. Each oxide was reduced to its metallic form by annealing in a hydrogen environment to produce metallic nanoparticles. Nanorods and nanoribbons of ZnO with diameters ranging from 20-65 nm and lengths up to 2 {mu}m were also produced.

  16. Effect of a Balanced Concentration of Hydrogen on Graphene CVD Growth

    Directory of Open Access Journals (Sweden)

    S. Chaitoglou

    2016-01-01

    Full Text Available The extraordinary properties of graphene make it one of the most interesting materials for future applications. Chemical vapor deposition (CVD is the synthetic method that permits obtaining large areas of monolayer graphene. To achieve this, it is important to find the appropriate conditions for each experimental system. In our CVD reactor working at low pressure, important factors appear to be the pretreatment of the copper substrate, considering both its cleaning and its annealing before the growing process. The carbon precursor/hydrogen flow ratio and its modification during the growth are significant in order to obtain large area graphene crystals with few defects. In this work, we have focused on the study of the methane and the hydrogen flows to control the production of single layer graphene (SLG and its growth time. In particular, we observe that hydrogen concentration increases during a usual growing process (keeping stable the methane/hydrogen flow ratio resulting in etched domains. In order to balance this increase, a modification of the hydrogen flow results in the growth of smooth hexagonal SLG domains. This is a result of the etching effect that hydrogen performs on the growing graphene. It is essential, therefore, to study the moderated presence of hydrogen.

  17. LaCoO3 nanosystems by a hybrid CVD/sol-gel approach.

    Science.gov (United States)

    Armelao, Lidia; Barreca, Davide; Bottaro, Gregorio; Gasparotto, Alberto; Maragno, Cinzia; Tondello, Eugenio; Sada, Cinzia

    2005-05-01

    LaCoO3 nanosystems are receiving increasing attention for the development of innovative fuel cells and heterogeneous catalysts. In this report, we describe the synthesis of nanophasic LaCoO3 thin films by a hybrid chemical vapor deposition (CVD)/sol-gel (SG) approach. The adopted strategy consists in the CVD of La-O-based systems on SG cobalt oxide xerogels CoOx(OH)y at temperatures as low as 200 degrees C and in the subsequent thermal treatment in air (400-800 degrees C, 2-8 h). In this context, particular attention is devoted to achieving an intimate La/Co intermixing already in the as-prepared systems, in order to favor reactions yielding a single La-Co-O phase with uniform composition. The obtained results point out to the formation of pure and structurally homogeneous LaCoO3 nanosystems after annealing at 700 degrees C, 2 h, with a typical grain-like morphology. More severe thermal treatment resulted in the thermal decomposition of LaCoO3 nanocrystallites.

  18. A large-scale NEMS light-emitting array based on CVD graphene (Conference Presentation)

    Science.gov (United States)

    Kim, Hyungsik; Kim, Young Duck; Lee, Changhyuk; Lee, Sunwoo; Seo, Dong-jea; Jerng, Sahng-Kyoon; Chun, Seung-Hyun; Hone, James; Shepard, Kenneth L.

    2017-02-01

    Graphene has received much interest from optical communities largely owing to its photon-like linear energy band structure called Dirac cone. While majority of the recent research has dealt with plasmon and polariton of the two-dimensional material, a recently reported graphene light emitter could render a new dimension of applications, particularly in high-speed optical communication. Moreover chemical vapor deposition (CVD) growth technique for graphene is available today providing means for scalable high quality graphene. The reported graphene emitter provides broadband light emission from visible to mid-infrared which could be instrumental in multi-color display units and optical communications, however a truly large scale implementation has not previously been achieved. Here we demonstrate a CMOS-compatible 262,144 light-emitting pixels array (10 x 10 mm2) based on suspended CVD graphene nano-electro-mechanical systems (GNEMS). A single photoemission area is 19.6 µm2 and a unit pixel is consisting of 512 photoemission devices (16 x 16) where a multiplexer and a digital to analog converter (DAC) are used to control each pixel. This work clearly demonstrates scalability of multi-channel GNEMS light-emitting array, an atomically thin electro-optical module, and further paves a path for its commercial implementation transparent display or high-speed optical communication.

  19. Diagramas de fase CVD para la preparación de películas de iridio

    Directory of Open Access Journals (Sweden)

    Hernández-Pérez, M. A.

    2002-02-01

    Full Text Available Chemical vapor deposition (CVD phase diagrams for the preparation of iridium films were calculated using Gibbs free energy minimization method. Iridium acetylacetonate (Ir(acac3 was used as the precursor compound. Two gaseous mixtures were analyzed: Ir(acac3-O2-Ar and Ir(acac3-Ar. The deposition temperatures were explored from 300 to 800 °C, total pressures from 13.3 to 13.332 Pa and partial pressures of Ir(acac3 gas and O2 gas from 0.001 to 1.000 Pa. The Ir-CVD diagrams predicted that without Oj gas in the gaseous mixture, the solid films consist of two solid phases: Ir+C. In contrast, with addition of O2 to the gaseous mixture, the Ir-CVD diagrams revealed different domains of condensed phases which include IrO2, IrO2+Ir, Ir and Ir+C. These diagrams allow one to establish the total pressures and temperatures required to obtain a given film composition. The results predicted by the Ir-CVD diagrams are in good agreement with those experimentally obtained.

    Se calcularon los diagramas de fase CVD (Chemical Vapor Deposition para la preparación de películas de iridio empleando el método de minimización de la energía libre de Gibbs. Como precursor se utilizó acetilacetonato de iridio (Ir(acac3. Se analizaron las mezclas gaseosas Ir(acac3-O2Ar e Ir(acac3-Ar. Las temperaturas de depósito se exploraron desde 300 hasta 800 °C, las presiones totales de 13,3 a 13.332 Pa y las presiones parciales de los gases Ir(acac3 y O2 desde 0,001 hasta 1.000 Pa. Los diagramas Ir-CVD predicen que sin O2 en la mezcla gaseosa, las películas constan de las fases sólidas Ir+C. En contraste, con adición de O2 los diagramas Ir-CVD revelan diferentes dominios de fases sólidas que incluyen IrO2, IrO2+Ir, Ir e Ir+C. Estos diagramas permiten establecer

  20. Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD

    Science.gov (United States)

    Guoguo, Yan; Feng, Zhang; Yingxi, Niu; Fei, Yang; Xingfang, Liu; Lei, Wang; Wanshun, Zhao; Guosheng, Sun; Yiping, Zeng

    2016-06-01

    Chloride-based fast homoepitaxial growth of 4H-SiC epilayers was performed on 4° off-axis 4H-SiC substrates in a home-made vertical hot-wall chemical vapor deposition (CVD) system using H2-SiH4-C2H4-HCl. The effect of the SiH4/H2 ratio and reactor pressure on the growth rate of 4H-SiC epilayers has been studied successively. The growth rate increase in proportion to the SiH4/H2 ratio and the influence mechanism of chlorine has been investigated. With the reactor pressure increasing from 40 to 100 Torr, the growth rate increased to 52 μm/hand then decreased to 47 μm/h, which is due to the joint effect of H2 and HCl etching as well as the formation of Si clusters at higher reactor pressure. The surface root mean square (RMS) roughness keeps around 1 nm with the growth rate increasing to 49 μm/h. The scanning electron microscope (SEM), Raman spectroscopy and X-ray diffraction (XRD) demonstrate that 96.7 μm thick 4H-SiC layers of good uniformity in thickness and doping with high crystal quality can be achieved. These results prove that chloride-based fast epitaxy is an advanced growth technique for 4H-SiC homoepitaxy. Project supported by the National High Technology R&D Program of China (No. 2014AA041402), the National Natural Science Foundation of China (Nos. 61474113, 61274007, 61574140), the Beijing Natural Science Foundation of China (Nos. 4132076, 4132074), the Program of State Grid Smart Grid Research Institute (No. SGRI-WD-71-14-004), and the Youth Innovation Promotion Association of CAS.

  1. Clean diffusion coatings by chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Warnes, B.M.; Punola, D.C. [Howmet Thermatech Coatings, Whitehall, MI (United States)

    1997-10-01

    An experimental program was undertaken to identify diffusion coating impurities introduced by standard aluminizing processes and to evaluate the impact of those impurities on oxidation resistance of the resultant Pt aluminide coating. IN-738 tabs and foils were platinum-electroplated, and then aluminized using three different processes: high-activity pack cementation, high-activity CVD and low-activity CVD. The results suggest that aluminizing processes which involve aluminum bearing alloys in the coating retort with H{sub 2} or H{sub 2}/HCl gas at high temperature can contaminate the diffusion coating during deposition. CVD low-activity aluminizing (coating gas generated at low temperature outside the coating chamber from 99.999% Al) did not introduce any coating impurities. In addition, the data indicates that harmful impurities from the IN-738 substrate (sulfur, boron and tungsten) and the electroplating process (phosphorus) were removed from the coating during deposition. The CVD low-activity Pt aluminide coating was the `cleanest` in the study, and it exhibited the best high-temperature oxidation resistance of the coatings considered. It can be concluded that trace elements in diffusion coatings from the superalloy substrate and/or the aluminizing process can adversely effect the oxidation resistance of those coatings, and that CVD low-activity aluminizing yields cleaner coatings than other commercially available aluminizing techniques. (orig.) 10 refs.

  2. Chemical vapor deposition and characterization of polysilanes polymer based thin films and their applications in compound semiconductors and silicon devices

    Science.gov (United States)

    Oulachgar, El Hassane

    . This work has demonstrated that a polysilane polymeric source can be used to deposit a wide range of thin film materials exhibiting similar properties with conventional ceramic materials such as silicon carbide (SiC), silicon oxynitride (SiON), silicon oxycarbide (SiOC) silicon dioxide (SiO2) and silicon nitride (Si3N4). The strict control of the deposition process allows precise control of the electrical, optical and chemical properties of polymer-based thin films within a broad range. This work has also demonstrated for the first time that poly(dimethylsilmaes) polymers deposited by CVD can be used to effectively passivate both silicon and gallium arsenide MOS devices. This finding makes polymer-based thin films obtained by CVD very promising for the development of high-kappa dielectric materials for next generation high-mobility CMOS technology. Keywords. Thin films, Polymers, Vapor Phase Deposition, CVD, Nanodielectrics, Organosilanes, Polysilanes, GaAs Passivation, MOSFET, Silicon Oxynitride, Integrated Waveguide, Silicon Carbide, Compound Semiconductors.

  3. HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

    Institute of Scientific and Technical Information of China (English)

    黄文韬; 罗广礼; 史进; 邓宁; 陈培毅; 钱佩信

    2003-01-01

    High-vacuum/chemical-vapor deposition (HV/CVD) system was used to grow relaxed SiGe buffer layers on Si substrates. Several methods were then used to analyze the quality of the SiGe films. X-ray diffraction and Raman spectroscopy showed that the upper layer was almost fully relaxed. Second ion mass spectroscopy showed that the Ge compositions were step-graded. Transmission electron microscopy showed that the misfit dislocations were restrained to the graded SiGe layers. Tests of the electrical properties of tensile-strained Si on relaxed SiGe buffer layers showed that their transconductances were higher than that of Si devices. These results verify the high quality of the relaxed SiGe buffer layer. The calculated critical layer thicknesses of the graded Si1-xGex layer on Si substrate and a Si layer on the relaxed SiGe buffer layer agree well with experimental results.

  4. Simulation and experimental approach to CVD-FBR aluminide coatings on ferritic steels under steam oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Leal, J. [Universidad Complutense de Madrid, Dep. CC. Materiales e Ingenieria Metalurgica, Avenida Complutense s/n, Facultad de Ciencias Quimicas, 28040 Madrid (Spain); Alcala, G. [Universidad Complutense de Madrid, Dep. CC. Materiales e Ingenieria Metalurgica, Avenida Complutense s/n, Facultad de Ciencias Quimicas, 28040 Madrid (Spain)], E-mail: galcades@yahoo.es; Bolivar, F.J.; Sanchez, L.; Hierro, M.P.; Perez, F.J. [Universidad Complutense de Madrid, Dep. CC. Materiales e Ingenieria Metalurgica, Avenida Complutense s/n, Facultad de Ciencias Quimicas, 28040 Madrid (Spain)

    2008-07-15

    The ferritic steels used to produce structural components for steam turbines are susceptible to strong corrosion and creep damage due to the extreme working conditions pushed to increase the process efficiency and to reduce pollutants release. The response of aluminide coatings on the P-92 ferritic steel, deposited by CVD-FBR, during oxidation in a simulated steam environment was studied. The analyses were performed at 650 deg. C in order to simulate the working conditions of a steam turbine, and 800 deg. C in order to produce a critical accelerated oxidation test. The Thermo-Calc software was used to predict the different solid phases that could be generated during the oxidation process, in both, coated and uncoated samples. In order to validate the thermodynamic results, the oxides scales produced during steam tests were characterized by different techniques such as XRD, SEM and EDS. The preliminary results obtained are discussed in the present work.

  5. A Bayesian method to estimate the neutron response matrix of a single crystal CVD diamond detector

    Energy Technology Data Exchange (ETDEWEB)

    Reginatto, Marcel; Araque, Jorge Guerrero; Nolte, Ralf; Zbořil, Miroslav; Zimbal, Andreas [Physikalisch-Technische Bundesanstalt, D-38116 Braunschweig (Germany); Gagnon-Moisan, Francis [Paul Scherrer Institut, CH-5232 Villigen (Switzerland)

    2015-01-13

    Detectors made from artificial chemical vapor deposition (CVD) single crystal diamond are very promising candidates for applications where high resolution neutron spectrometry in very high neutron fluxes is required, for example in fusion research. We propose a Bayesian method to estimate the neutron response function of the detector for a continuous range of neutron energies (in our case, 10 MeV ≤ E{sub n} ≤ 16 MeV) based on a few measurements with quasi-monoenergetic neutrons. This method is needed because a complete set of measurements is not available and the alternative approach of using responses based on Monte Carlo calculations is not feasible. Our approach uses Bayesian signal-background separation techniques and radial basis function interpolation methods. We present the analysis of data measured at the PTB accelerator facility PIAF. The method is quite general and it can be applied to other particle detectors with similar characteristics.

  6. Crystallographic analysis of CVD films using x-ray polychromatic radiation

    Energy Technology Data Exchange (ETDEWEB)

    Lavelle, B. [CNRS, Toulouse (France). Centre d`Elaboration de Materiaux et d`Etudes Structurales; Brissonneau, L.; Baggot, E.; Vahlas, C. [INPT-CNRS, Toulouse (France). Lab. Materiaux et Interfaces

    1998-12-31

    The Energy Dispersive X-ray Diffractometry (EDXD) technique was tested for in-situ crystallographic characterization of nickel films processed by chemical vapor deposition (CVD). The diffracted beam at low Bragg angle was analyzed in energy by a solid state detector. A nickel reference sample was used to face the problems of EDXD background signal and uncertainty of sample location. The relative accuracy on lattice parameters measurements is 1.5.10{sup {minus}3}, to be compared to 0.5.10{sup {minus}3} for classical (monochromatic) X-ray diffraction. Texture measurements yields results in agreement with those obtained form recent texture goniometer. Finally, an estimation of the thickness was obtained from the intensity of nickel fluorescence peak. In view of the obtained results, EDXD appears to be a promising technique for in-situ studies. Although less powerful compared to the synchrotron facility, it is more flexible and can be applied at lower cost.

  7. Electrochemical Intercalation of Lithium into Raw and Mild Oxide-treated Carbon Nanotubes Prepared by CVD

    Institute of Scientific and Technical Information of China (English)

    LIN Ke-zhi; XU Yan-hui; WANG Xiao-lin; LUO Guo-hua

    2004-01-01

    The raw carbon nanotubes (CNTs) prepared by chemical vapor deposition (CVD) were used in electrochemical lithiation. To remove the impurity the mild oxidation was done on the samples. The electrochemical characteristics of the two samples are investigated by the galvanostatic charge-discharge measurements and cyclic voltammetry. The structural and interfacial changes of the CNTs electrode were analyzed by XRD and FT-IR. The samples show a reversibility of lithium intercalation and de-intercalation. The reversible capacities of the first five cycles are larger than 300 mAh/g and the irreversible capacity of the first cycle was much larger than that mentioned in literatures. There is no identical change in the structure during the charge and discharge. The reactions at the interface between electrode and the electrolyte are similar to those of other carbonaceous materials.

  8. CVD Synthesis of Hierarchical 3D MWCNT/Carbon-Fiber Nanostructures

    Directory of Open Access Journals (Sweden)

    Toma Susi

    2008-01-01

    Full Text Available Multiwalled carbon nanotubes (MWCNTs were synthesized by CVD on industrially manufactured highly crystalline vapor-grown carbon fibers (VGCFs. Two catalyst metals (Ni and Fe and carbon precursor gases (C2H2 and CO were studied. The catalysts were deposited on the fibers by sputtering and experiments carried out in two different reactors. Samples were characterized by electron microscopy (SEM and TEM. Iron was completely inactive as catalyst with both C2H2 and CO for reasons discussed in the paper. The combination of Ni and C2H2 was very active for secondary CNT synthesis, without any pretreatment of the fibers. The optimal temperature for CNT synthesis was 750∘C, with total gas flow of 650 cm3min⁡−1 of C2H2, H2, and Ar in 1.0:6.7:30 ratio.

  9. Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

    Energy Technology Data Exchange (ETDEWEB)

    Munoz, D. [XaRMAE-Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Diagonal 647, Barcelona 08028 (Spain)], E-mail: delfina@eel.upc.edu; Voz, C.; Blanque, S. [Universitat Politecnica de Catalunya, Grup de Recerca en Micro i Nanotecnologies, Jordi Girona 1-3, Barcelona 08034 (Spain); Ibarz, D.; Bertomeu, J. [XaRMAE-Universitat de Barcelona, Departament de Fisica Aplicada i Optica, Diagonal 647, Barcelona 08028 (Spain); Alcubilla, R. [Universitat Politecnica de Catalunya, Grup de Recerca en Micro i Nanotecnologies, Jordi Girona 1-3, Barcelona 08034 (Spain)

    2009-03-15

    In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances ({rho}{sub c} {approx} 10 m{omega} cm{sup 2}) have been obtained on 2.8 {omega} cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

  10. Synthesis and Optimization of MWCNTs on Co-Ni/MgO by Thermal CVD

    Directory of Open Access Journals (Sweden)

    H. Ryu

    2008-01-01

    Full Text Available Multiwalled carbon nanotubes (MWCNTs were prepared by the thermal chemical vapor deposition (CVD technique. Monometallic and bimetallic Co and Ni combinations were used as a catalyst on MgO support. The mixer of H2/C2H2 was used as a carbon source. The prepared CNTs were found to possess different shapes, morphologies, and sizes. Maximum yield was found for 50% Co (MgO: 50% and Ni: 0% catalyst at 600°C. Scanning electron microscopy (SEM and high-resolution transmission electron microscopy (HRTEM techniques were used for structural analysis. Raman spectra were taken to investigate the quality and crystalline perfection of the prepared CNTs. The ratio of D- and G-bands (ID/IG was measured from these spectra.

  11. Changes in CVD risk factors in the activity counseling trial

    Directory of Open Access Journals (Sweden)

    Meghan Baruth

    2011-01-01

    Full Text Available Meghan Baruth1, Sara Wilcox1, James F Sallis3, Abby C King4,5, Bess H Marcus6, Steven N Blair1,21Department of Exercise Science, 2Department of Epidemiology and Biostatistics, Arnold School of Public Health, University of South Carolina, Public Health Research Center, Columbia, SC, USA; 3Department of Psychology, San Diego State University, San Diego, CA, USA; 4Department of Health Research and Policy, 5Stanford Prevention Research Center, Department of Medicine, Stanford University School of Medicine, Stanford, CA, USA; 6Behavioral and Social Sciences Section, Brown University Program in Public Health, Providence, RI, USAAbstract: Primary care facilities may be a natural setting for delivering interventions that focus on behaviors that improve cardiovascular disease (CVD risk factors. The purpose of this study was to examine the 24-month effects of the Activity Counseling Trial (ACT on CVD risk factors, to examine whether changes in CVD risk factors differed according to baseline risk factor status, and to examine whether changes in fitness were associated with changes in CVD risk factors. ACT was a 24-month multicenter randomized controlled trial to increase physical activity. Participants were 874 inactive men and women aged 35–74 years. Participants were randomly assigned to one of three arms that varied by level of counseling, intensity, and resource requirements. Because there were no significant differences in change over time between arms on any of the CVD risk factors examined, all arms were combined, and the effects of time, independent of arm, were examined separately for men and women. Time × Baseline risk factor status interactions examined whether changes in CVD risk factors differed according to baseline risk factor status. Significant improvements in total cholesterol, high-density lipoprotein cholesterol (HDL-C and low-density lipoprotein cholesterol, the ratio of total cholesterol to HDL-C, and triglycerides were seen in

  12. Effect of CVD-diamond coatings on the tribological performance of cemented tungsten carbide substrates

    Directory of Open Access Journals (Sweden)

    Kaleem Ahmad Najar

    2016-06-01

    Full Text Available A comparison has been documented between nanocrystalline diamond (NCD and microcrystalline diamond (MCD coatings deposited on cemented tungsten carbide (WC-Co substrates with architectures of WC-Co/NCD & WC-Co/MCD, using hot filament chemical vapor deposition (HFCVD technique. In the present work, the frictional characteristics were studied using ball-on-disc type linear reciprocating micro-tribometer, under the application of 1–10N normal loads, when sliding against smooth alumina (Al2O3 ceramic ball for the total duration of 15min, under dry sliding conditions. Nanoindentation tests were also conducted using Berkovich nanoindenter for the purpose of measurement of hardness and elastic modulus values. The average coefficients of friction of MCD and NCD coatings decrease from 0.37 – 0.32 and 0.3 – 0.27 respectively, when the load is increased from 1–10N. However, for conventional WC-Co substrate the average coefficient of friction increases from 0.60–0.75, under the same input operating conditions. The wear tracks formed on the surfaces of CVD-diamond coatings and WC-Co substrate, after friction measurement were characterised using Raman spectroscopy and scanning electron microscopy (SEM techniques. However, the compositional analysis for the formation of tribo-layer observed on the wear tracks of CVD-diamond coatings was confirmed using energy dispersive spectroscopy (EDS technique. Therefore, maintaining an appropriate level of normal load and using appropriate type of diamond coating, friction may be kept to some lower value to improve mechanical processes.

  13. Laser metal deposition with spatial variable orientation based on hollow-laser beam with internal powder feeding technology

    Science.gov (United States)

    Shi, Tuo; Lu, Bingheng; Shi, Shihong; Meng, Weidong; Fu, Geyan

    2017-02-01

    In this study, a hollow-laser beam with internal powder feeding (HLB-IPF) head is applied to achieve non-horizontal cladding and deposition of overhanging structure. With the features of this head such as uniform scan energy distribution, thin and straight spraying of the powder beam, the deposition in spatial variable orientation is conducted using a 6-axis robot. During the deposition process the head keeps tangential to the growth direction of the part. In the experiment, a "vase" shaped metal part with overhanging structure is successfully deposited, and the largest overhanging angle achieves 80° to the vertical direction. The "step effect" between cladding layers is completely eliminated with the best surface roughness of Ra=3.864 μm. Cross section of cladding layers with unequal height are deposited for angle change. Test results indicate that the formed part has uniform wall thickness, fine microstructure and high microhardness.

  14. Laser Velocimetry of Chemical Vapor Deposition Flows

    Science.gov (United States)

    1993-01-01

    Laser velocimetry (LV) is being used to measure the gas flows in chemical vapor deposition (CVD) reactors. These gas flow measurements can be used to improve industrial processes in semiconductor and optical layer deposition and to validate numerical models. Visible in the center of the picture is the graphite susceptor glowing orange-hot at 600 degrees C. It is inductively heated via the copper cool surrounding the glass reactor.

  15. Filmes de diamante CVD dopado com boro. Parte I . Histórico, produção e caracterização Boron-doped CVD diamond films. Part I. History, production and characterization

    Directory of Open Access Journals (Sweden)

    Rita de Cássia Mendes de Barros

    2005-03-01

    Full Text Available This review presents a brief account concerning the production, characterization and evolution of the knowledge in the area of diamond and boron-doped diamond films. The most important methods used for the growth of these films, such as chemical vapor deposition and high pressure/high temperature systems, as well as the several kinds of reactors which can be employed are reviewed. However, larger emphasis is given to the CVD method. Morphological, structural and electric properties of these films, as well as their role in the performance of voltammetric electrodes for electrochemistry and electroanalytical chemistry are also discussed.

  16. Fabrication of micro hole array on the surface of CVD ZnS by scanning ultrafast pulse laser for antireflection

    Science.gov (United States)

    Li, Yangping; Zhang, Tianhui; Fan, Siling; Cheng, Guanghua

    2017-04-01

    Chemical vapor deposited (CVD) ZnS is a promising long-wave infrared (8-12 μm) window material. Yet antireflection is necessary since Fresnel reflection from its surface is high due to the high refractive index of ZnS. Sub-wavelength structured surface of micro hole array was fabricated on CVD ZnS by scanning ultrafast pulse laser ablation. The effects of beam profile, pulse width and beam power on the radius and morphology of the holes were studied. Gaussian beam can cause severe melted-resolidified layers around the hole, yet Bessel beam only resulted in thin ribbon around the hole. The picosecond Bessel laser is more suitable than femtosecond laser for ablating holes on ZnS. The radius of the holes increases with increasing the Bessel beam pulse width and the beam power. But larger power may cause circle grooves around the central holes. Ordered hole array was fabricated on single side of CVD ZnS and antireflection was realized.

  17. Surface morphology, growth rate and quality of diamond films synthesized in hot filament CVD system under various methane concentrations

    Science.gov (United States)

    Ali, M.; Ürgen, M.

    2011-08-01

    Hot filament chemical vapor deposition (CVD) technique has been used to deposit diamond films on silicon substrate. In the present study, diamond films were grown at various vol.% CH 4 in H 2 from 0.5% to 3.5%, at substrate temperature and pressure of 850 °C and 80 torr, respectively. Scanning electron microscopy, X-ray diffraction and Raman spectroscopy were employed to analyze the properties of deposited films. The formation of methyl radicals as a function of vol.% CH 4 not only changes film morphology but also increase film growth rate. At low, intermediate and high vol.% CH 4, cluster, faceted cubes and pyramidal features growth, were dominant. By increasing vol.% CH 4 from 0.5% to 3.5%, as the growth rate improved from ˜0.25 μm/h to ˜2.0 μm/h. Raman studies features revealed high purity diamond films at intermediate range of vol.% CH 4 and grain density increased by increasing CH 4 concentration. The present study represents experimentally surface morphology, growth rate and quality of diamond films grown in hot filament CVD system at various CH 4 concentrations.

  18. Surface properties of diamond-like carbon films prepared by CVD and PVD methods

    Institute of Scientific and Technical Information of China (English)

    Liu Dong-Ping; Liu Yan-Hong; Chen Bao-Xiang

    2006-01-01

    Diamond-like carbon (DLC) films have been deposited using three different techniques: (a) electron cyclotron resonance-plasma source ion implantation, (b) low-pressure dielectric barrier discharge, (c) filtered-pulsed cathodic arc discharge. The surface and mechanical properties of these films are compared using atomic force microscopebased tests. The experimental results show that hydrogenated DLC films are covered with soft surface layers enriched with hydrogen and sp3 hybridized carbon while the soft surface layers of tetrahedral amorphous carbon (ta-C) films have graphite-like structure. The formation of soft surface layers can be associated with the surface diffusion and growth induced by the low-energy deposition process. For typical CVD methods, the atomic hydrogen in the plasmas can contribute to the formation of hydrogen and sp3 hybridized carbon enriched surface layers. The high-energy ion implantation causes the rearrangement of atoms beneath the surface layer and leads to an increase in film density. The ta-C films can be deposited using the medium energy carbon ions in the highly-ionized plasma.

  19. Degradation of a tantalum filament during the hot-wire CVD of silicon nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oliphant, C.J. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040 (South Africa); Arendse, C.J., E-mail: cjarendse@uwc.ac.za [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Muller, T.F.G. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Jordaan, W.A. [National Metrology Institute of South Africa, Private Bag X34, Lynwood Ridge, Pretoria 0040 (South Africa); Knoesen, D. [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa)

    2015-01-30

    Electron backscatter diffraction revealed that during the hot-wire deposition of silicon nitride, a tantalum filament partially transformed to some of its nitrides and silicides. The deposition of an encapsulating silicon nitride layer occurred at the cooler filament ends. Time-of-flight secondary ion mass spectroscopy disclosed the presence of hydrogen, nitrogen and silicon containing ions within the aged filament bulk. Hardness measurements revealed that the recrystallized tantalum core experienced significant hardening, whereas the silicides and nitrides were harder but more brittle. Crack growth, porosity and the different thermal expansion amongst the various phases are all enhanced at the hotter centre regions, which resulted in failure at these areas. - Highlights: • Tantalum filament degrades and fails during hot-wire CVD of silicon nitride thin films. • An encapsulating silicon nitride layer is deposited at the cooler ends. • Electron backscatter diffraction reveals Ta-silicides and -nitrides with a Ta core. • Filament failure occurs at hot centre regions due to different mechanical properties of Ta, its silicides and nitrides.

  20. Preparation of hydrogenated microcrystalline silicon films with hot-wire-assisted MWECR-CVD system

    Institute of Scientific and Technical Information of China (English)

    He Bin; Chen Guang-Hua; Zhu Xiu-Hong; Zhang Wen-Li; Ding Yi; Ma Zhan-Jie; Gao Zhi-Hua; Song Xue-Mei; Deng Jin-Xiang

    2006-01-01

    Intrinsic hydrogenated microcrystalline silicon (μc-Si:H) films have been prepared by hot-wire-assisted microwave electron-cyclotron-resonance chemical vapour deposition (Hw-MwECR-CVD) under different deposition conditions.Fourier-transform infrared spectra and Raman spectra were measured.Optical band gap WaS determined by Tauc plots,and experiments of photo-induced degradation were performed.It was observed that hydrogen dilution plays a more essential role than substrate temperature in microcrystalline transformation at low temperatures. Crystalline volume fraction and mean grain size in the films increase with the dilution ratio (R=H2/(H2+SiH4)).With the rise of crystallinity in the films,the optical band gap tends to become narrower while the hydrogen content and photo-induced degradation decrease dramatically.The samples,were identified as μc-Si:H films,by calculating the optical band gap.It is considered that hydrogen dilution has an effect on reducing the crystallization activation energy of the material,which promotes the heterogeneous solid-state phase transition characterized by the Johnson-Mehl-Avrami (JMA) equation.The films with the needed structure can be prepared by balancing deposition and crystaUization through controlling process parameters.

  1. Applications of ZnO:Al deposited by RF sputtering to InN low-cost technology

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Madrid (Spain); Naranjo, F.B.; Valdueza-Felip, S. [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala Campus Universitario, Madrid (Spain); Abril, O. de [ISOM y Departamento de Fisica Aplicada, Escuela Tecnica Superior de Ingenieros de Telecomunicacion, Universidad Politenica de Madrid (Spain)

    2010-07-15

    InN/ZnO:Al heterostructures deposited at low temperature on different substrates by radio-frequency sputtering were studied. Using ZnO:Al as buffer layer, an improvement in the InN structural properties was achieved. Evaluating ZnO:Al as contact on InN, an Ohmic behaviour for the as-deposited layer on InN was achieved. A specific contact resistance of 2 {omega} cm{sup 2} was measured without any post-deposition treatment. These properties could result very promising for optoelectronic device applications. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  2. Argan oil improves surrogate markers of CVD in humans.

    Science.gov (United States)

    Sour, Souad; Belarbi, Meriem; Khaldi, Darine; Benmansour, Nassima; Sari, Nassima; Nani, Abdelhafid; Chemat, Farid; Visioli, Francesco

    2012-06-01

    Limited - though increasing - evidence suggests that argan oil might be endowed with potential healthful properties, mostly in the areas of CVD and prostate cancer. We sought to comprehensively determine the effects of argan oil supplementation on the plasma lipid profile and antioxidant status of a group of healthy Algerian subjects, compared with matched controls. A total of twenty healthy subjects consumed 15 g/d of argan oil - with toasted bread - for breakfast, during 4 weeks (intervention group), whereas twenty matched controls followed their habitual diet, but did not consume argan oil. The study lasted 30 d. At the end of the study, argan oil-supplemented subjects exhibited higher plasma vitamin E concentrations, lower total and LDL-cholesterol, lower TAG and improved plasma and cellular antioxidant profile, when compared with controls. In conclusion, we showed that Algerian argan oil is able to positively modulate some surrogate markers of CVD, through mechanisms which warrant further investigation.

  3. Crystal growth of CVD diamond and some of its peculiarities

    CERN Document Server

    Piekarczyk, W

    1999-01-01

    Experiments demonstrate that CVD diamond can form in gas environments that are carbon undersaturated with respect to diamond. This fact is, among others, the most serious violation of principles of chemical thermodynamics. In this $9 paper it is shown that none of the principles is broken when CVD diamond formation is considered not a physical process consisting in growth of crystals but a chemical process consisting in accretion of macro-molecules of polycyclic $9 saturated hydrocarbons belonging to the family of organic compounds the smallest representatives of which are adamantane, diamantane, triamantane and so forth. Since the polymantane macro-molecules are in every respect identical with $9 diamond single crystals with hydrogen-terminated surfaces, the accretion of polymantane macro- molecules is a process completely equivalent to the growth of diamond crystals. However, the accretion of macro-molecules must be $9 described in a way different from that used to describe the growth of crystals because so...

  4. CVD Diamonds in the BaBar Radiation Monitoring System

    CERN Document Server

    Bruinsma, M; Edwards, A J; Kagan, H; Kass, R; Kirkby, D; Petersen, B A

    2006-01-01

    To prevent excessive radiation damage to its Silicon Vertex Tracker, the BaBar experiment at SLAC uses a radiation monitoring and protection system that triggers a beam abort whenever radiation levels are anomalously high. The existing system, which employs large area Si PIN diodes as radiation sensors, has become increasingly difficult to operate due to radiation damage. We have studied CVD diamond sensors as a potential alternative for these silicon sensors. Two diamond sensors have been routinely used since their installation in the Vertex Tracker in August 2002. The experience with these sensors and a variety of tests in the laboratory have shown CVD diamonds to be a viable solution for dosimetry in high radiation environments. However, our studies have also revealed surprising side-effects.

  5. Cold Vacuum Drying (CVD) OCRWM Loop Error Determination

    Energy Technology Data Exchange (ETDEWEB)

    PHILIPP, B.L.

    2000-07-26

    Characterization is specifically identified by the Richland Operations Office (RL) for the Office of Civilian Radioactive Waste Management (OCRWM) of the US Department of Energy (DOE), as requiring application of the requirements in the Quality Assurance Requirements and Description (QARD) (RW-0333P DOE 1997a). Those analyses that provide information that is necessary for repository acceptance require application of the QARD. The cold vacuum drying (CVD) project identified the loops that measure, display, and record multi-canister overpack (MCO) vacuum pressure and Tempered Water (TW) temperature data as providing OCRWM data per Application of the Office of Civilian Radioactive Waste Management (OCRWM) Quality Assurance Requirements to the Hanford Spent Nuclear Fuel Project HNF-SD-SNF-RPT-007. Vacuum pressure transmitters (PT 1*08, 1*10) and TW temperature transmitters (TIT-3*05, 3*12) are used to verify drying and to determine the water content within the MCO after CVD.

  6. Evidence relating sodium intake to blood pressure and CVD.

    Science.gov (United States)

    O'Donnell, Martin; Mente, Andrew; Yusuf, Salim

    2014-01-01

    Sodium is an essential nutrient, mostly ingested as salt (sodium chloride). Average sodium intake ranges from 3 to 6 g per day (7.5-15 g/day of salt) in most countries, with regional variations. Increasing levels of sodium intake have a positive association with higher blood pressure. Randomized controlled trials report a reduction in blood pressure with reducing sodium intake from moderate to low levels, which is the evidence that forms the basis for international guidelines recommending all people consume less than 2.0 g of sodium per day. However, no randomized trials have demonstrated that reducing sodium leads to a reduction in cardiovascular disease (CVD). In their absence, the next option is to examine the association between sodium consumption and CVD in prospective cohort studies. Several recent prospective cohort studies have indicated that while high intake of sodium (>6 g/d) is associated with higher risk of CVD compared to those with moderate intake (3 to 5 g/d), lower intake (<3 g/day) is also associated with a higher risk (despite lower blood pressure levels). However, most of these studies were conducted in populations at increased risk of cardiovascular disease. Current epidemiologic evidence supports that an optimal level of sodium intake is in the range of about 3-5 g/day, as this range is associated with lowest risk of CVD in prospective cohort studies. Randomized controlled trials, comparing the effect of low sodium intake to moderate intake on incidence of cardiovascular events and mortality, are required to truly define optimal intake range.

  7. Infrared spectroscopic study of carrier scattering in gated CVD graphene

    Science.gov (United States)

    Yu, Kwangnam; Kim, Jiho; Kim, Joo Youn; Lee, Wonki; Hwang, Jun Yeon; Hwang, E. H.; Choi, E. J.

    2016-12-01

    We measured Drude absorption of gated CVD graphene using far-infrared transmission spectroscopy and determined the carrier scattering rate (γ ) as a function of the varied carrier density (n ). The n -dependent γ (n ) was obtained for a series of conditions systematically changed as (10 K, vacuum) → (300 K, vacuum) → (300 K, ambient pressure), which reveals that (1) at low-T, charged impurity (=A /√{n } ) and short-range defect (=B √{n } ) are the major scattering sources which constitute the total scattering γ =A /√{n }+B √{n } , (2) among various kinds of phonons populated at room-T , surface polar phonon of the SiO2 substrate is the dominantly scattering source, and (3) in air, the gas molecules adsorbed on graphene play a dual role in carrier scattering as charged impurity center and resonant scattering center. We present the absolute scattering strengths of those individual scattering sources, which provides the complete map of scattering mechanism of CVD graphene. This scattering map allows us to find out practical measures to suppress the individual scatterings, the mobility gains accompanied by them, and finally the ultimate attainable carrier mobility for CVD graphene.

  8. Ultra-high Burst Strength of CVD Graphene Membranes

    Science.gov (United States)

    Wang, Luda; Boutilier, Michael; Kidambi, Piran; Karnik, Rohit; Microfluidics; Nanofluidics Research Lab Team

    2015-11-01

    Porous graphene membranes have significant potential in gas separation, water desalination and nanofiltration. Understanding the mechanical strength of porous graphene is crucial because membrane separations can involve high pressures. We studied the burst strength of CVD graphene membrane placed on porous support at applied pressures up to 100 bar by monitoring the gas flow rate across the membrane as a function of pressure. Increase of gas flow rate with pressure allowed for extraction of the burst fraction of graphene as it failed under increasing pressure. We also studied the effect of sub-nanometer pores on the ability of graphene to withstand pressure. The results showed that porous graphene membranes can withstand pressures comparable to or even higher than the >50 bar pressures encountered in water desalination, with non-porous CVD graphene exhibiting even higher mechanical strength. Our study shows that porous polycrystalline CVD graphene has ultra-high burst strength under applied pressure, suggesting the possibility for its use in high-pressure membrane separations. Principal Investigator

  9. Approach to diabetes management in patients with CVD.

    Science.gov (United States)

    Lathief, Sanam; Inzucchi, Silvio E

    2016-02-01

    Epidemiologic analyses have established a clear association between diabetes and macrovascular disease. Vascular dysfunction caused by metabolic abnormalities in patients with diabetes is associated with accelerated atherosclerosis and increased risk of myocardial infarction (MI), stroke, and peripheral arterial disease. Patients with diabetes are at two to four fold higher CV risk as compared to non-diabetic individuals, and CVD remains the leading cause of mortality in patients with this condition. One strategy to reduce CVD burden in patients with diabetes has been to focus on controlling the major metabolic abnormality in this condition, namely hyperglycemia. However, this has not been unequivocally demonstrated to reduced CV events, in contrast to controlling other CVD risk factors linked to hyperglycemia, such as blood pressure, dyslipidemia, and platelet dysfunction. However, In contradistinction, accrued data from a number of large, randomized clinical trials in both type 1 (T1DM) and type 2 diabetes (T2DM) over the past 3 decades have proven that more intensive glycemic control retards the onset and progression of microvascular disease. In this review, we will summarize the key glucose-lowering CV outcomes trials in diabetes, provide an overview of the different drugs and their impact on the CV system, and describe our approach to management of the frequently encountered patient with T2DM and coronary artery disease (CAD) and/or heart failure (HF).

  10. The Effects of Exercise Therapy on CVD Risk Factors in Women.

    Science.gov (United States)

    Hur, Sun; Kim, Seon-Rye

    2014-09-01

    [Purpose] The purpose of this study was to search for the association of Type D personality and CVD risk factors through comparison of the association of exercise participation with CVD risk factors in women. [Subjects] The research subjects were randomly assigned to four groups: Type D+Exercise (n=12), Type D+non-exercise (n=12), non-Type D+Exercise (n=12), and non-Type D+non-exercise (n=10). The study consisted of 46 participants. [Methods] An aerobic exercise program and meditation were conducted in parallel for 10 months. Stretching was performed for 10 min as a warm-up, and then walking and running on a treadmill at 60 to 70% of HRmax were performed for 40 min three times a week. Blood samples were processed according to standard laboratory procedures. The concentrations of TG and HDL cholesterol were determined enzymatically using a clinical chemistry analyzer (Hitachi High-Technologies Corporation, Tokyo, Japan). [Results] The weight, percentage of body fat, waist circumference, triglyceride concentration, HDL cholesterol concentration, systolic blood pressure, and diastolic blood pressure showed a significant difference between measurement times in the exercise groups. [Conclusion] In conclusion, there were significant differences between groups in terms of cardiovascular disease risk factors.

  11. Development of a CVD diamond Beam Condition Monitor for CMS at the Large Hadron Collider

    CERN Document Server

    Fernández-Hernando, L; Gray, R; Ilgner, C; MacPherson, A; Oh, A; Pritchard, T; Stone, R; Worm, S

    2005-01-01

    The CERN Large Hadron Collider (LHC) will store 2808 bunches per colliding beam, with each bunch consisting of 1011 protons at an energy of 7 TeV. If there is a failure in an element of the accelerator, the resulting beam losses could cause damage not only to the machine but also to the experiments. A Beam Condition Monitor (BCM) is foreseen to monitor fast increments of particle fluxes near the interaction point and, if necessary, to generate an abort signal to the LHC accelerator control to dump the beams. The system is being developed initially for the CMS experiment but it is sufficiently general to find potential applications elsewhere. Due to its high radiation hardness, CVD diamond was chosen for investigation as the BCM sensor. Various samples of CVD diamond have been characterized extensively with both a 90Sr source and in high-intensity test beams in order to assess the capabilities of such sensors and to study whether this detector technology is suitable for a BCM system. A selection of results fro...

  12. Effect of structure and deposition technology on tribological properties of DLC coatings alloyed with VIA group metals

    Science.gov (United States)

    Khrushchov, M.; Levin, I.; Marchenko, E.; Avdyukhina, V.; Petrzhik, M.

    2016-07-01

    The results of a comprehensive research on atomic structure, phase composition, micromechanical and tribological characteristics of alloyed DLC coatings have been presented. The coatings have been deposited by reactive magnetron sputtering in acetylene-nitrogen gas mixtures of different compositions (a-C:H:Cr), by plasma-assisted chemical vapor deposition in atmospheres of silicone-organic precursor gases (a-C:H:Mo:Si), and by nonreactive magnetron sputtering of a composite target (a-C:H:W).

  13. The Role of Government in Responding to Foreign CVD Investigations:Shenzhen’s Experiences

    Institute of Scientific and Technical Information of China (English)

    2011-01-01

    <正>The paper probes into a series of meaningful and constructive work accomplished by Shenzhen government on foreign CVD investigations.Specifically, this paper analyzes the characteristics of CVD investigations for Shenzhen and the harmful impact of CVD investigation.It evaluates the major investigated subsidy programs in foreign CVDs against Chinese imports and discusses how to avoid CVD cases effectively and analyzes the principal measures taken by Shenzhen in dealing with CVD investigations concretely.The paper concludes that these works not only promoted the implementation of China’s WTO commitments,but also contributed to boost Shenzhen economic and social development and internationalization.

  14. A Comparison between Thin-Film Transistors Deposited by Hot-Wire Chemical Vapor Deposition and PECVD

    Directory of Open Access Journals (Sweden)

    Meysam Zarchi

    2015-03-01

    Full Text Available The effect of new growth techniques on the mobility and stability of amorphous silicon (a-Si:H thin film transistors (TFTs has been studied. It was suggested that the key parameter controlling the field-effect mobility and stability is the intrinsic stress in the a-Si:H layer. Amorphous and microcrystalline silicon films were deposited by radiofrequency plasma enhanced chemical vapor deposition (RF-PECVD and hot-wire chemical vapor deposition (HW-CVD at 100 ºC and 25 ºC. Structural properties of these films were measured by Raman Spectroscopy. Electronic properties were measured by dark conductivity, σd, and photoconductivity, σph. For amorphous silicon films deposited by RF-PECVD on PET, photosensitivity's of >105 were obtained at both 100 º C and 25 ºC. For amorphous silicon films deposited by HW-CVD, a photosensitivity of > 105 was obtained at 100 ºC. Microcrystalline silicon films deposited by HW-CVD at 95% hydrogen dilution show σph~ 10-4 Ω-1cm-1, while maintaining a photosensitivity of ~102 at both 100 ºC and 25 ºC. Microcrystalline silicon films with a large crystalline fraction (> 50% can be deposited by HW-CVD all the way down to room temperature.

  15. Initiated-chemical vapor deposition of organosilicon layers: Monomer adsorption, bulk growth, and process window definition

    NARCIS (Netherlands)

    Aresta, G.; Palmans, J.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Organosilicon layers have been deposited from 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3) by means of the initiated-chemical vapor deposition (i-CVD) technique in a deposition setup, ad hoc designed for the engineering of multilayer moisture permeation barriers. The application of Fourier

  16. FABRICATION OF CNTS BY TOLUENE DECOMPOSITION IN A NEW REACTOR BASED ON AN ATMOSPHERIC PRESSURE PLASMA JET COUPLED TO A CVD SYSTEM

    Directory of Open Access Journals (Sweden)

    FELIPE RAMÍREZ-HERNÁNDEZ

    2017-03-01

    Full Text Available Here, we present a method to produce carbon nanotubes (CNTs based on the coupling between two conventional techniques used for the preparation of nanostructures: an arc-jet as a source of plasma and a chemical vapour deposition (CVD system. We call this system as an “atmospheric pressure plasma (APP-enhanced CVD” (APPE-CVD. This reactor was used to grow CNTs on non-flat aluminosilicate substrates by the decomposition of toluene (carbon source in the presence of ferrocene (as a catalyst. Both, CNTs and by-products of carbon were collected at three different temperatures (780, 820 and 860 °C in different regions of the APPE-CVD system. These samples were analysed by thermogravimetric analysis (TGA and DTG, scanning electron microscopy (SEM and Raman spectroscopy in order to determine the effect of APP on the thermal stability of the as-grown CNTs. It was found that the amount of metal catalyst in the synthesised CNTs is reduced by applying APP, being 820 °C the optimal temperature to produce CNTs with a high yield and carbon purity (95 wt. %. In contrast, when the synthesis temperature was fixed at 780 °C or 860 °C, amorphous carbon or CNTs with different structural defects, respectively, was formed through APEE-CVD reactor. We recommended the use of non-flat aluminosilicate particles as supports to increase CNT yield and facilitate the removal of deposits from the substrate surface. The approach that we implemented (to synthesise CNTs by using the APPE-CVD reactor may be useful to produce these nanostructures on a gram-scale for use in basic studies. The approach may also be scaled up for mass production.

  17. Qualitative and chemical characteristics of mineral matter in the selected lignite deposits in light of their suitability for clean coal technologies

    Directory of Open Access Journals (Sweden)

    Bielowicz Barbara

    2016-01-01

    Full Text Available An analysis of the variability of ash content and chemical composition of coal ash is crucial when assessing the possibility of using this raw material in clean coal technologies (CCS. The paper focuses on chemical, technological and quality characteristics of ash from the combustion of lignite from Polish deposits. Ash content on a dry ash-free basis for the samples from 9 deposits varies from 1 to 50%. The most commonly observed ash content in the studied samples of lignite is in the range between 10–20%. The measured ash melting temperatures from the collected lignite samples have shown that the sintering, softening, melting and flow temperatures, determined in an oxidizing atmosphere (air, are higher than those determined in a reducing atmosphere. In the majority of Polish lignite deposits, the dominant component of ash was SiO2, followed by CaO. When evaluating the suitability of coal in energy production, with particular emphasis on the combustion and gasification processes, it is also necessary to study the behavior of ash at high temperatures and the impact of ash on the gasification and combustion facilities. Ash fouling and slagging processes, which are heavily dependent on the ash content, composition, melting point and the content of chlorine, phosphorus and sulfur in coal, have a negative effect on the combustion process.

  18. Characteristics and properties of metal aluminum thin films prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology

    Institute of Scientific and Technical Information of China (English)

    Xiong Yu-Qing; Li Xing-Cun; Chen Qiang; Lei Wen-Wen; Zhao Qiao; Sang Li-Jun; Liu Zhong-Wei; Wang Zheng-Duo; Yang Li-Zhen

    2012-01-01

    Metal aluminum (Al) thin films are prepared by 2450 MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas.We focus our attention on the plasma source for the thin-film preparation and annealing of the as-deposited films relative to the surface square resistivity.The square resistivity of as-deposited Al films is greatly reduced after annealing and almost reaches the value of bulk metal.Through chemical and structural analysis,we conclude that the square resistivity is determined by neither the contaminant concentration nor the surface morphology,but by both the crystallinity and crystal size in this process.

  19. Evolution of Ore Deposits and Technology Transfer Project: Isotope and Chemical Methods in Support of the U.S. Geological Survey Science Strategy, 2003-2008

    Science.gov (United States)

    Rye, Robert O.; Johnson, Craig A.; Landis, Gary P.; Hofstra, Albert H.; Emsbo, Poul; Stricker, Craig A.; Hunt, Andrew G.; Rusk, Brian G.

    2010-01-01

    Principal functions of the U.S. Geological Survey (USGS) Mineral Resources Program are providing assessments of the location, quantity, and quality of undiscovered mineral deposits, and predicting the environmental impacts of exploration and mine development. The mineral and environmental assessments of domestic deposits are used by planners and decisionmakers to improve the stewardship of public lands and public resources. Assessments of undiscovered mineral deposits on a global scale reveal the potential availability of minerals to the United States and other countries that manufacture goods imported to the United States. These resources are of fundamental relevance to national and international economic and security policy in our globalized world economy. Performing mineral and environmental assessments requires that predictions be made of the likelihood of undiscovered deposits. The predictions are based on geologic and geoenvironmental models that are constructed for the diverse types of mineral deposits from detailed descriptions of actual deposits and detailed understanding of the processes that formed them. Over the past three decades the understanding of ore-forming processes has benefited greatly from the integration of laboratory-based geochemical tools with field observations and other data sources. Under the aegis of the Evolution of Ore Deposits and Technology Transfer Project (referred to hereinafter as the Project), a 5-year effort that terminated in 2008, the Mineral Resources Program provided state-of-the-art analytical capabilities to support applications of several related geochemical tools to ore-deposit-related studies. The analytical capabilities and scientific approaches developed within the Project have wide applicability within Earth-system science. For this reason the Project Laboratories represent a valuable catalyst for interdisciplinary collaborations of the type that should be formed in the coming years for the United States to meet

  20. Selected area chemical vapor deposition of thin films for conductometric microelectronic chemical sensors

    Science.gov (United States)

    Majoo, Sanjeev

    Recent advances in microelectronics and silicon processing have been exploited to fabricate miniaturized chemical sensors. Although the capability of chemical sensing technology has grown steadily, it has been outpaced by the increasing demands for more reliable, inexpensive, and selective sensors. The diversity of applications requires the deployment of different sensing materials that have rich interfacial chemistry. However, several promising sensor materials are often incompatible with silicon micromachining and their deposition requires complicated masking steps. The new approach described here is to first micromachine a generic, instrumented, conductometric, microelectronic sensor platform that is fully functional except for the front-end sensing element. This generic platform contains a thin dielectric membrane, an integrated boron-doped silicon heater, and conductance electrodes. The membrane has low thermal mass and excellent thermal isolation. A proprietary selected-area chemical vapor deposition (SACVD) process in a cold-wall reactor at low pressures was then used to achieve maskless, self-lithographic deposition of thin films. The temperature-programmable integrated microheater initiates localized thermal decomposition/reaction of suitable CVD precursors confined to a small heated area (500 mum in diameter), and this creates the active sensing element. Platinum and titania (TiOsb2) films were deposited from pyrolysis of organometallic precursors, tetrakistrifluorophosphine platinum Pt(PFsb3)sb4 and titanium tetraisopropoxide Ti(OCH(CHsb3)sb2rbrack sb4, respectively. Deposition of gold metal films from chlorotriethylphosphine gold (Csb2Hsb5)sb3PAuCl precursor was also attempted but without success. The conductance electrodes permit in situ monitoring of film growth. The as-deposited films were characterized in situ by conductance measurements and optical microscopy and ex situ by electron microscopy and spectroscopy methods. Devices equipped with

  1. Using hot wire and initiated chemical vapor deposition for gas barrier thin film encapsulation

    Energy Technology Data Exchange (ETDEWEB)

    Spee, D.A., E-mail: diederickspee@gmail.com; Rath, J.K.; Schropp, R.E.I.

    2015-01-30

    Hot wire CVD (HWCVD) and initiated CVD (iCVD) are very well suited deposition techniques for the fabrication of transparent thin film gas barriers. Single inorganic or organic layers, however, face challenges, which are hard to overcome: unavoidable defects and low intrinsic barrier function. We demonstrate that by combining inorganic HWCVD films and organic iCVD films, a water vapor transmission rate a low as 5 ∗ 10{sup −6} g/m{sup 2}/day at 60 °C and 90% RH for a simple pinhole free three layer structure is obtained even with non-optimized individual layers. Given the 100 °C deposition temperature, the layer stacks can be deposited on any sensitive electronic device.

  2. Evaluation of a bivalent (CVD 103-HgR/CVD 111) live oral cholera vaccine in adult volunteers from the United States and Peru.

    Science.gov (United States)

    Taylor, D N; Tacket, C O; Losonsky, G; Castro, O; Gutierrez, J; Meza, R; Nataro, J P; Kaper, J B; Wasserman, S S; Edelman, R; Levine, M M; Cryz, S J

    1997-09-01

    To provide optimum protection against classical and El Tor biotypes of Vibrio cholerae O1, a single-dose, oral cholera vaccine was developed by combining two live, attenuated vaccine strains, CVD 103-HgR (classical, Inaba) and CVD 111 (El Tor, Ogawa). The vaccines were formulated in a double-chamber sachet; one chamber contained lyophilized bacteria, and the other contained buffer. In the first study, 23 U.S. adult volunteers received CVD 103-HgR at 10(8) CFU plus CVD 111 at 10(8), 10(7), or 10(6) CFU, CVD 111 alone at 10(7) CFU, or placebo. In the second study, 275 Peruvian adults were randomized to receive CVD 103-HgR at 10(9) CFU plus CVD 111 at 10(9) or 10(8) CFU, CVD 111 alone at 10(9) CFU, CVD 103-HgR alone at 10(9) CFU, or placebo. Three of 15 U.S. volunteers who received CVD 111 at 10(7) or 10(8) CFU developed mild diarrhea, compared to none of 4 who received CVD 111 at 10(6) CFU and 1 of 4 who received placebo. Twelve (63%) of 19 vaccine recipients shed the El Tor vaccine strain. All but one volunteer developed significant Ogawa and Inaba vibriocidal antibody titers. Volunteers who received CVD 111 at 10(7) CFU had geometric mean Ogawa titers four to five times higher than those of volunteers who received the lower dose. In the second study, all dosage regimens were well tolerated in Peruvians. About 20% of volunteers who received CVD 111 at the high dose excreted the El Tor organism, compared to 7% in the low-dose group. CVD 111 was detected in the stools of two placebo recipients, neither of whom had symptoms or seroconverted. In all vaccine groups, 69 to 76% developed fourfold rises in Inaba vibriocidal antibodies. Among those who received the bivalent vaccine, 53 to 75% also developed significant rises in Ogawa vibriocidal antibodies. We conclude that it is feasible to produce a single-dose, oral bivalent vaccine that is safe and immunogenic against both biotypes (El Tor and classical) and both serotypes (Inaba and Ogawa) of cholera for populations in

  3. Functional materials - Study of process for CVD SiC/C composite material

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Doo Jin; Wang, Chae Chyun; Lee, Young Jin; Oh, Byung Jun [Yonsei University, Seoul (Korea)

    2000-04-01

    The CVD SiC coating techniques are the one of high functional material manufactures that improve the thermal, wear, oxidization and infiltration resistance of the surface of raw materials and extend the life of material. Silicon carbide films have been grown onto graphite substrates by low pressure chemical vapor deposition using MTS(CH{sub 3}SiCl{sub 3}) as a source precursor and H{sub 2} or N{sub 2} as a diluent gas. The experiments for temperature and diluent gas addition changes were performed. The effect of temperature from 900 deg. C to 1350 deg. C and the alteration of diluent gas species on the growth rate and structure of deposits have been studied. The experimental results showed that the deposition rate increased with increasing deposition temperature irrespective of diluent gases and reactant depletion effect increased especially at H{sub 2} diluent gas ambient. As the diluent gas added, the growth rate decreased parabolically. For N{sub 2} addition, surface morphology of leaf-like structure appeared, and for H{sub 2}, faceted structure at 1350 deg. C. The observed features were involved by crystalline phase of {beta}-SiC and surface composition with different gas ambient. We also compared the experimental results of the effect of partial pressure on the growth rate with the results of theoretical approach based on the Langmuir-Hinshelwood model. C/SiC composites were prepared by isothermal chemical vapor infiltration (ICVI). In order to fabricate the more dense C/SiC composites, a novel process of the in-situ whisker growing and filling during ICVI was devised, which was manipulated by alternating dilute gas species. The denser C/SiC composites were successfully prepared by the novel process comparing with the conventional ICVI process. 64 refs., 36 figs., 5 tabs. (Author)

  4. Prediction of the properties of PVD/CVD coatings with the use of FEM analysis

    Science.gov (United States)

    Śliwa, Agata; Mikuła, Jarosław; Gołombek, Klaudiusz; Tański, Tomasz; Kwaśny, Waldemar; Bonek, Mirosław; Brytan, Zbigniew

    2016-12-01

    The aim of this paper is to present the results of the prediction of the properties of PVD/CVD coatings with the use of finite element method (FEM) analysis. The possibility of employing the FEM in the evaluation of stress distribution in multilayer Ti/Ti(C,N)/CrN, Ti/Ti(C,N)/(Ti,Al)N, Ti/(Ti,Si)N/(Ti,Si)N, and Ti/DLC/DLC coatings by taking into account their deposition conditions on magnesium alloys has been discussed in the paper. The difference in internal stresses in the zone between the coating and the substrate is caused by, first of all, the difference between the mechanical and thermal properties of the substrate and the coating, and also by the structural changes that occur in these materials during the fabrication process, especially during the cooling process following PVD and CVD treatment. The experimental values of stresses were determined based on X-ray diffraction patterns that correspond to the modelled values, which in turn can be used to confirm the correctness of the accepted mathematical model for testing the problem. An FEM model was established for the purpose of building a computer simulation of the internal stresses in the coatings. The accuracy of the FEM model was verified by comparing the results of the computer simulation of the stresses with experimental results. A computer simulation of the stresses was carried out in the ANSYS environment using the FEM method. Structure observations, chemical composition measurements, and mechanical property characterisations of the investigated materials has been carried out to give a background for the discussion of the results that were recorded during the modelling process.

  5. Atomic scale KMC simulation of {100} oriented CVD diamond film growth under low substrate temperature-Part II Simulation of CVD diamond film growth in C-H system and in Cl-containing systems

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    The growth of {100}-oriented CVD diamond film under two modifications of J-B-H model at low substrate temperatures was simulated by using a revised KMC method at atomic scale. The results were compared both in Cl-containing systems and in C-H system as follows: (1) Substrate temperature can produce an important effect both on film deposition rate and on surface roughness; (2) Aomic Cl takes an active role for the growth of diamond film at low temperatures; (3) {100}-oriented diamond film cannot deposit under single carbon insertion mechanism, which disagrees with the predictions before; (4) The explanation of the exact role of atomic Cl is not provided in the simulation results.

  6. A Comparative Study of Three Different Chemical Vapor Deposition Techniques of Carbon Nanotube Growth on Diamond Films

    Directory of Open Access Journals (Sweden)

    Betty T. Quinton

    2013-01-01

    Full Text Available This paper compares between the methods of growing carbon nanotubes (CNTs on diamond substrates and evaluates the quality of the CNTs and the interfacial strength. One potential application for these materials is a heat sink/spreader for high-power electronic devices. The CNTs and diamond substrates have a significantly higher specific thermal conductivity than traditional heat sink/spreader materials making them good replacement candidates. Only limited research has been performed on these CNT/diamond structures and their suitability of different growth methods. This study investigates three potential chemical vapor deposition (CVD techniques for growing CNTs on diamond: thermal CVD (T-CVD, microwave plasma-enhanced CVD (MPE-CVD, and floating catalyst thermal CVD (FCT-CVD. Scanning electron microscopy (SEM and high-resolution transmission electron microscopy (TEM were used to analyze the morphology and topology of the CNTs. Raman spectroscopy was used to assess the quality of the CNTs by determining the ID/IG peak intensity ratios. Additionally, the CNT/diamond samples were sonicated for qualitative comparisons of the durability of the CNT forests. T-CVD provided the largest diameter tubes, with catalysts residing mainly at the CNT/diamond interface. The MPE-CVD process yielded non uniform defective CNTs, and FCT-CVD resulted in the smallest diameter CNTs with catalyst particles imbedded throughout the length of the nanotubes.

  7. Ultrasonic Spray Pyrolysis Technology for Deposition of Semiconductor Thin Films%超声喷雾热解法制备半导体薄膜技术

    Institute of Scientific and Technical Information of China (English)

    王世凯; 姜妍彦; 唐乃岭; 李焕勇; 胡志强

    2011-01-01

    超声喷雾热解法(USP)作为一种新兴的薄膜制备技术,已制备出多种半导体薄膜材料,并成功应用于太阳能电池、传感器、固态氧化物燃料电池等领域.介绍了USP制备薄膜技术的原理,结合近年来USP技术在半导体薄膜制备领域的研究进展,系统阐述了超声喷雾热解法制备薄膜的原理、工艺过程及在此过程中发生的物理化学变化,详细分析了前驱体溶液化学组成、沉积温度、退火处理等各个工艺参数对薄膜沉积过程和成膜质量的影响,指出了该技术目前存在的问题及今后的发展方向.%As a new technology for thin-film deposition, USP has been widely applied to deposite a variety of semiconductor thin films and these films are used successfully in various devices such as solar cells, sensors, and solid oxide fuel cells. The theory and process of USP, especially the physical and chemical changes in deposition process have been introduced comprehensively. Meanwhile, the effects of spray parameters such as the chemical composition of precursor solution, substrate temperature and annealing treatment on the deposition process and film quality has been analyzed in detail. At last, the problems of USP technology existing and the development direction in the future are pointed out.

  8. Ultrasonic cavity preparation using CVD coated diamond bur: A case report.

    Science.gov (United States)

    de Vasconcellos, Beatriz Tholt; Thompson, Jeffrey Y; de Paula Macedo, Manoel Roberto; de Oliveira Maia, Janaína Monalisa; Oda, Margareth; Garone-Netto, Narciso

    2013-01-01

    Before any restorative procedure can be undertaken a proper cavity preparation is required. This clinical step is the mechanical alteration of the tooth to receive a restorative material with which a satisfactory form, function and the esthetics of the tooth will be established. In recent years improvements in materials and techniques have been devised and new technologies are now available for this purpose. The aim of the present study is to report two clinical cases in which a CVD coated diamond bur coupled to an ultrasonic handpiece is used in dental preparation. This technique provides an accurate and conservative tooth preparation with ideal access and visibility and because of enhanced efficiency can also play a role in eliminating some of the patient discomfort of the dental treatment.

  9. Urchin-like artificial gallium oxide nanowires grown by a novel MOCVD/CVD-based route for random laser application

    Energy Technology Data Exchange (ETDEWEB)

    Melo, Ronaldo P. de [Programa de Pós-Graduação em Ciências de Materiais, Universidade Federal de Pernambuco, Recife (Brazil); Colégio Militar do Recife, Exército Brasileiro, Recife PE 50730-120 (Brazil); Oliveira, Nathalia Talita C. [Programa de Pós-Graduação em Ciências de Materiais, Universidade Federal de Pernambuco, Recife (Brazil); Dominguez, Christian Tolentino; Gomes, Anderson S. L.; Araújo, Cid B. de [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife (Brazil); Falcão, Eduardo H. L.; Alves, Severino; Luz, Leonis L. da [Departamento de Química Fundamental, Universidade Federal de Pernambuco, 50670-901 Recife (Brazil); Chassagnon, Remi [Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS-Université de Bourgogne, 9 Av. A. Savary, BP 47870, 21078 Dijon Cedex (France); Sacilotti, Marco [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife (Brazil); Nanoform Group, Laboratoire Interdisciplinaire Carnot de Bourgogne, Université de Bourgogne, Dijon (France)

    2016-04-28

    A novel procedure based on a two-step method was developed to obtain β-Ga{sub 2}O{sub 3} nanowires by the chemical vapor deposition (CVD) method. The first step consists in the gallium micro-spheres growth inside a metal-organic chemical vapor deposition environment, using an organometallic precursor. Nanoscale spheres covering the microspheres were obtained. The second step involves the CVD oxidization of the gallium micro-spheres, which allow the formation of β-Ga{sub 2}O{sub 3} nanowires on the micro-sphere surface, with the final result being a nanostructure mimicking nature's sea urchin morphology. The grown nanomaterial is characterized by several techniques, including X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray, transmission electron microscopy, and photoluminescence. A discussion about the growth mechanism and the optical properties of the β-Ga{sub 2}O{sub 3} material is presented considering its unknown true bandgap value (extending from 4.4 to 5.68 eV). As an application, the scattering properties of the nanomaterial are exploited to demonstrate random laser emission (around 570 nm) when it is permeated with a laser dye liquid solution.

  10. Oats and CVD risk markers: a systematic literature review.

    Science.gov (United States)

    Thies, Frank; Masson, Lindsey F; Boffetta, Paolo; Kris-Etherton, Penny

    2014-10-01

    High consumption of whole-grain food such as oats is associated with a reduced risk of CVD and type 2 diabetes. The present study aimed to systematically review the literature describing long-term intervention studies that investigated the effects of oats or oat bran on CVD risk factors. The literature search was conducted using Embase, Medline and the Cochrane library, which identified 654 potential articles. Seventy-six articles describing sixty-nine studies met the inclusion criteria. Most studies lacked statistical power to detect a significant effect of oats on any of the risk factors considered: 59 % of studies had less than thirty subjects in the oat intervention group. Out of sixty-four studies that assessed systemic lipid markers, thirty-seven (58 %) and thirty-four (49 %) showed a significant reduction in total cholesterol (2-19 % reduction) and LDL-cholesterol (4-23 % reduction) respectively, mostly in hypercholesterolaemic subjects. Few studies (three and five, respectively) described significant effects on HDL-cholesterol and TAG concentrations. Only three out of twenty-five studies found a reduction in blood pressure after oat consumption. None of the few studies that measured markers of insulin sensitivity and inflammation found any effect after long-term oat consumption. Long-term dietary intake of oats or oat bran has a beneficial effect on blood cholesterol. However, there is no evidence that it favourably modulates insulin sensitivity. It is still unclear whether increased oat consumption significantly affects other risk markers for CVD risk, and comprehensive, adequately powered and controlled intervention trials are required to address this question.

  11. Epigenetic modifications and human pathologies: cancer and CVD.

    Science.gov (United States)

    Duthie, Susan J

    2011-02-01

    Epigenetic changes are inherited alterations in DNA that affect gene expression and function without altering the DNA sequence. DNA methylation is one epigenetic process implicated in human disease that is influenced by diet. DNA methylation involves addition of a 1-C moiety to cytosine groups in DNA. Methylated genes are not transcribed or are transcribed at a reduced rate. Global under-methylation (hypomethylation) and site-specific over-methylation (hypermethylation) are common features of human tumours. DNA hypomethylation, leading to increased expression of specific proto-oncogenes (e.g. genes involved in proliferation or metastasis) can increase the risk of cancer as can hypermethylation and reduced expression of tumour suppressor (TS) genes (e.g. DNA repair genes). DNA methyltransferases (DNMT), together with the methyl donor S-adenosylmethionine (SAM), facilitate DNA methylation. Abnormal DNA methylation is implicated not only in the development of human cancer but also in CVD. Polyphenols, a group of phytochemicals consumed in significant amounts in the human diet, effect risk of cancer. Flavonoids from tea, soft fruits and soya are potent inhibitors of DNMT in vitro, capable of reversing hypermethylation and reactivating TS genes. Folates, a group of water-soluble B vitamins found in high concentration in green leafy vegetables, regulate DNA methylation through their ability to generate SAM. People who habitually consume the lowest level of folate or with the lowest blood folate concentrations have a significantly increased risk of developing several cancers and CVD. This review describes how flavonoids and folates in the human diet alter DNA methylation and may modify the risk of human colon cancer and CVD.

  12. Carbon fiber CVD coating by carbon nanostructured for space materials protection against atomic oxygen

    Science.gov (United States)

    Pastore, Roberto; Bueno Morles, Ramon; Micheli, Davide

    2016-07-01

    , by the purpose to integrate the carbon nanostructures in the carbon fibers by means of chemical vapor deposition (CVD) method, in order to develop the basic substrate of advanced carbon-based nanocomposite for atomic oxygen protection. The nanostructures grown onto the carbon fibers can be used to create multiscale hybrid carbon nanotube/carbon fiber composites where individual carbon fibers, which are several microns in diameter, are surrounded by nanotubes. The present objective is the setting-up of the CVD parameters for a reliable growth of carbon nanostructures on carbon fiber surface; after that, the results of a preliminary characterization related to atomic oxygen effects testing by means of a ground LEO simulation facility are reported and discussed.

  13. Facility for continuous CVD coating of ceramic fibers

    Science.gov (United States)

    Moore, Arthur W.

    1992-01-01

    An inductively heated CVD furnace of pilot-plant scale, whose hot zone is 150 mm in diameter x 300 mm in length, has been adapted for continuous coating of ceramic yarns. Coatings at very low pressures are possible in this facility due to the fact that the entire apparatus, including yarn feeding and collecting equipment, is under vacuum. SiC yarn has been coated with 0.1-0.2 microns of BN at yarn speeds of 60 cm/min; a 500-m spool; was coated in about 14 hrs. Coating capacity was tripled by adding pulleys to allow three yarn passes through the furnace.

  14. CVD Diamond Sink Application in High Power 3D MCMs

    Institute of Scientific and Technical Information of China (English)

    XIE Kuo-jun; JIANG Chang-shun; LI Cheng-yue

    2005-01-01

    As electronic packages become more compact, run at faster speeds and dissipate more heat, package designers need more effective thermal management materials. CVD diamond, because of its high thermal conductivity, low dielectric loss and its great mechanical strength, is an excellent material for three dimensional (3D) multichip modules (MCMs) in the next generation compact high speed computers and high power microwave components. In this paper, we have synthesized a large area freestanding diamond films and substrates, and polished diamond substrates, which make MCMs diamond film sink becomes a reality.

  15. Induktive Randschichthärtung CVD-beschichteter Stähle mit Abschreckung im Gasdüsenfeld

    DEFF Research Database (Denmark)

    Pantleon, Karen; Kessler, Olaf; Hoffmann, Franz

    2000-01-01

    the properties of steel substrates ready for operation. Induction surface hardening is applied to TiN-coated 100Cr6 (AISI 52100) and X155CrVMo12-1 (AISI D2) substrates. In comparison to TiN-42CrMo4(AISI 4140)-compounds it is found, that induction heating to higher temperatures is necessary to harden higher......The properties of hard coatings deposited using CVD-processes are usually excellent. However, high deposition temperatures may negatively influence the properties of steel substrates, especially in the case of low alloyed steels. Therefore, a subsequent heat treatment is necessary to restore...... alloyed steels but these high temperatures may cause modifications of TiN-coatings. Nevertheless, by optimising the parameters of the induction process there are great advantages of induction surface hardening compared to conventional bulk hardening....

  16. Numerical analysis of an impinging jet reactor for the CVD and gas-phase nucleation of titania

    Science.gov (United States)

    Gokoglu, Suleyman A.; Stewart, Gregory D.; Collins, Joshua; Rosner, Daniel E.

    1994-06-01

    We model a cold-wall atmospheric pressure impinging jet reactor to study the CVD and gas-phase nucleation of TiO2 from a titanium tetra-iso-propoxide (TTIP)/oxygen dilute source gas mixture in nitrogen. The mathematical model uses the computational code FIDAP and complements our recent asymptotic theory for high activation energy gas-phase reactions in thin chemically reacting sublayers. The numerical predictions highlight deviations from ideality in various regions inside the experimental reactor. Model predictions of deposition rates and the onset of gas-phase nucleation compare favorably with experiments. Although variable property effects on deposition rates are not significant (approximately 11 percent at 1000 K), the reduction rates due to Soret transport is substantial (approximately 75 percent at 1000 K).

  17. Induktive Randschichthärtung CVD-beschichteter Stähle mit Abschreckung im Gasdüsenfeld

    DEFF Research Database (Denmark)

    Pantleon, Karen; Kessler, Olaf; Hoffmann, Franz;

    2000-01-01

    The properties of hard coatings deposited using CVD-processes are usually excellent. However, high deposition temperatures may negatively influence the properties of steel substrates, especially in the case of low alloyed steels. Therefore, a subsequent heat treatment is necessary to restore...... the properties of steel substrates ready for operation. Induction surface hardening is applied to TiN-coated 100Cr6 (AISI 52100) and X155CrVMo12-1 (AISI D2) substrates. In comparison to TiN-42CrMo4(AISI 4140)-compounds it is found, that induction heating to higher temperatures is necessary to harden higher...... alloyed steels but these high temperatures may cause modifications of TiN-coatings. Nevertheless, by optimising the parameters of the induction process there are great advantages of induction surface hardening compared to conventional bulk hardening....

  18. Conversion Coatings for Aluminum Alloys by Chemical Vapor Deposition Mechanisms

    Science.gov (United States)

    Reye, John T.; McFadden, Lisa S.; Gatica, Jorge E.; Morales, Wilfredo

    2004-01-01

    With the rise of environmental awareness and the renewed importance of environmentally friendly processes, the United States Environmental Protection Agency has targeted surface pre-treatment processes based on chromates. Indeed, this process has been subject to regulations under the Clean Water Act as well as other environmental initiatives, and there is today a marked movement to phase the process out in the near future. Therefore, there is a clear need for new advances in coating technology that could provide practical options for replacing present industrial practices. Depending on the final application, such coatings might be required to be resistant to corrosion, act as chemically resistant coatings, or both. This research examined a chemical vapor deposition (CVD) mechanism to deposit uniform conversion coatings onto aluminum alloy substrates. Robust protocols based on solutions of aryl phosphate ester and multi-oxide conversion coating (submicron) films were successfully grown onto the aluminum alloy samples. These films were characterized by X-ray Photoelectron Spectroscopy (XPS). Preliminary results indicate the potential of this technology to replace aqueous-based chromate processes.

  19. Advanced deposition model for thermal activated chemical vapor deposition

    Science.gov (United States)

    Cai, Dang

    Thermal Activated Chemical Vapor Deposition (TACVD) is defined as the formation of a stable solid product on a heated substrate surface from chemical reactions and/or dissociation of gaseous reactants in an activated environment. It has become an essential process for producing solid film, bulk material, coating, fibers, powders and monolithic components. Global market of CVD products has reached multi billions dollars for each year. In the recent years CVD process has been extensively used to manufacture semiconductors and other electronic components such as polysilicon, AlN and GaN. Extensive research effort has been directed to improve deposition quality and throughput. To obtain fast and high quality deposition, operational conditions such as temperature, pressure, fluid velocity and species concentration and geometry conditions such as source-substrate distance need to be well controlled in a CVD system. This thesis will focus on design of CVD processes through understanding the transport and reaction phenomena in the growth reactor. Since the in situ monitor is almost impossible for CVD reactor, many industrial resources have been expended to determine the optimum design by semi-empirical methods and trial-and-error procedures. This approach has allowed the achievement of improvements in the deposition sequence, but begins to show its limitations, as this method cannot always fulfill the more and more stringent specifications of the industry. To resolve this problem, numerical simulation is widely used in studying the growth techniques. The difficulty of numerical simulation of TACVD crystal growth process lies in the simulation of gas phase and surface reactions, especially the latter one, due to the fact that very limited kinetic information is available in the open literature. In this thesis, an advanced deposition model was developed to study the multi-component fluid flow, homogeneous gas phase reactions inside the reactor chamber, heterogeneous surface

  20. Geological and Technological Characterization of the Manganese ore Deposits of the Córrego do Cocho Mine, Itapira (SP

    Directory of Open Access Journals (Sweden)

    Nelson Angeli

    2011-12-01

    Full Text Available The objects of this study are three manganese ore deposits and one mine derived from lateritic weathering of gondites(spessartine quartzites. These deposits are associated with Mn-rich garnet metasediments of the Itapira Group (Paleoproterozoicand the reserves were estimated at approximately 2.0 x 106 tons with an average grade of 23% MnO2. The ore minerals arecryptomelane, pyrolusite, lithiophorite, spessartine and psilomelane. Several crystal shapes and textural characteristics wereidentifi ed in this study, which are related to the degree of liberation, as confi rmed by heavy media separation method. In thisstudy, we determined the main characteristics of the liberation of manganese, which is concentrated in the fi ne grain-sizefraction and is lost during ore dressing. Therefore, the low average content of MnO2 (28% is due to this loss, whereas at grainsize of minus 0.074 mm, contents near 40% MnO2 were observed. This suggests that the ore can be used for manufacturingmanganese sulphate fertilizers. A comparative study with the ore deposits located at Ouro Fino (MG, mainly with theCaneleiras mine, showed that higher degree of liberation occurs in the coarse grain-size fractions (0.84 to 0.074 mm withMnO2 content of 38%. As a consequence, the ore can be used for manufacturing Fe-Si-Mn alloys.

  1. Role of biomarkers in predicting CVD risk in the setting of HIV infection?

    DEFF Research Database (Denmark)

    Worm, Signe W; Hsue, Priscilla

    2010-01-01

    with risk of CVD. Biomarkers associated with inflammation such as C-reactive protein and interleukin-6 have been suggested to improve risk stratification among intermediate-risk persons; however, their routine use is not recommended in the general population. Both biomarkers have recently been reported...... will be needed to help determine the utility of specific markers in predicting CVD risk as well as the mechanism underlying increased CVD risk in the setting of HIV infection....

  2. Low temperature CVD growth of ultrathin carbon films

    Directory of Open Access Journals (Sweden)

    Chao Yang

    2016-05-01

    Full Text Available We demonstrate the low temperature, large area growth of ultrathin carbon films by chemical vapor deposition under atmospheric pressure on various substrates. In particularly, uniform and continuous carbon films with the thickness of 2-5 nm were successfully grown at a temperature as low as 500 oC on copper foils, as well as glass substrates coated with a 100 nm thick copper layer. The characterizations revealed that the low-temperature-grown carbon films consist on few short, curved graphene layers and thin amorphous carbon films. Particularly, the low-temperature grown samples exhibited over 90% transmittance at a wavelength range of 400-750 nm and comparable sheet resistance in contrast with the 1000oC-grown one. This low-temperature growth method may offer a facile way to directly prepare visible ultrathin carbon films on various substrate surfaces that are compatible with temperatures (500-600oC used in several device processing technologies.

  3. Efecto del argon en películas CNxHy depositadas mediante ECR-CVD

    Directory of Open Access Journals (Sweden)

    Albella, J. M.

    2004-04-01

    Full Text Available Carbon nitride films have been deposited by ECR-CVD, from Ar/CH4/N2 gas mixtures with different methane concentrations. Infrared Spectroscopy (IRS and Elastic Recoil Detection Analysis (ERDA have been used for films characterisation and Optical Emission Spectroscopy (OES for plasma analysis. Argon concentration in the gas mixture controls the growth rate as well as the composition of the film. In the proposed model, argon plays a key role in the activation of methane molecules. Also, during the growth of the film, two processes may be considered: i Film formation and ii Etching of the growing surface. Changing the gas mixture composition affects both processes, which results in films with different composition and structure as well as different deposition rates.Se ha estudiado el efecto del argon durante el proceso de CVD asistido por un plasma ECR para la síntesis de películas de nitruro de carbono (CNxHy a partir de mezclas gaseosas Ar/CH4/N2 con diferente contenido de metano. Las películas depositadas han sido analizadas mediante espectroscopía infrarroja (IRS y ERDA (Elastic Recoil Detection Analysis, y el análisis del plasma ha sido realizado utilizando la técnica de espectroscopía de emisión óptica (OES. La velocidad de deposición y la composición de las películas depositadas se encuentran determinadas por la concentración de argon en la mezcla gaseosa. Se propone un modelo, según el cual el argon juega un papel fundamental como activador de las moléculas de metano. El modelo propuesto incluye dos procesos simultáneos durante el crecimiento de las capas : i formación de la capa y ii ataque de la superficie de crecimiento. Según la composición de la mezcla gaseosa se favorece uno u otro proceso, lo que conduce a velocidades de deposición diferentes así como a depósitos con diferente composición y estructura atómica.

  4. Enhanced graphitization of c-CVD grown multi-wall carbon nanotube arrays assisted by removal of encapsulated iron-based phases under thermal treatment in argon

    Energy Technology Data Exchange (ETDEWEB)

    Boncel, Slawomir, E-mail: slawomir.boncel@polsl.pl [Department of Organic Chemistry, Biochemistry and Biotechnology, Silesian University of Technology, Krzywoustego 4, 44-100 Gliwice (Poland); Koziol, Krzysztof K.K., E-mail: kk292@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, CB3 0FS Cambridge (United Kingdom)

    2014-05-01

    Graphical abstract: - Highlights: • Annealing of the c-CVD MWCNT arrays toward complete removal of iron nanoparticles. • The ICP-AES protocol established for quantitative analysis of Fe-content in MWCNTs. • The vertical alignment from the as-grown MWCNT arrays found intact after annealing. • A route to decrease number of defects/imperfections in the MWCNT graphene walls. • A foundation for commercial purification of c-CVD derived MWCNTs. - Abstract: The effect of annealing on multi-walled carbon nanotube (MWCNT) arrays grown via catalytic Chemical Vapour Deposition (c-CVD) was studied. The treatment enabled to decrease number of defects/imperfections in the graphene walls of MWCNTs’, which was reflected in Raman spectroscopy by reduction of the I{sub D}/I{sub G} ratio by 27%. Moreover, the vertical alignment from the as-synthesized nanotube arrays was found intact after annealing. Not only graphitization of the nanotube walls occurred under annealing, but the amount of metal iron-based catalyst residues (interfering with numerous physicochemical properties, and hence applications of MWCNTs) was reduced from 9.00 wt.% (for pristine MWCNTs) to 0.02 wt.% as detected by Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP-AES). This value, established by a new analytical protocol, is the lowest recorded by now for purified c-CVD MWCNTs and, due to operating under atmospheric pressure, medium temperature regime (as for annealing processes), reasonable time-scale and metal residue non-specificity, it could lay the foundation for commercial purification of c-CVD derived MWCNTs.

  5. Capacitance characteristics of low-k low-cost CVD grown polyimide liner for high-density Cu through-Si-via in three-dimensional LSI

    Science.gov (United States)

    Mariappan, Murugesan; Fukushima, Takafumi; Bea, Ji-Chel; Hashimoto, Hiroyuki; Koyanagi, Mitsumasa

    2016-04-01

    Minimization of the parasitic capacitance arising from Cu-through-Si-vias (TSVs) has been rigorously considered in order to enhance the performances of three-dimensional (3D) LSIs. We have systematically investigated the role of chemical vapor deposited (CVD) polyimide (PI) liner in Cu-TSVs in reducing the TSV capacitance. It is confirmed that CVD grown PI greatly helps to reduce the TSV capacitance as compared to the conventional PECVD-SiO2 liner. In addition to that the presence of very small hysteresis and a negligible flat-band voltage shift along the voltage axis confirms the suitability of PI liner as dielectric in the Cu-TSVs, if it were operated below the bias voltages of ±20 V. In over all, the large reduction in capacitance along with the conformal deposition of PI in the TSVs having less than 3 µm-width with aspect ratios greater than 10 reveals that CVD grown PI has the potential application in the future 3D-LSIs with highly scaled TSV.

  6. Remote Sensing Technology for Identification of Alteration Information of Gold Deposits in the Eastern Tianshan Area, Xinjiang

    Institute of Scientific and Technical Information of China (English)

    FU Shuixing; ZHANG Shoulin; LI Chunxia; FENG Jianzhong; FANG Tonghui; SUN Baosheng

    2004-01-01

    Based on specific well-exposed rocks useful for high-quality remote sensing interpretation in the goldprospecting area in the eastern Tianshan, this paper gives a detailed description of a remote sensing model for metallogenic prediction. The model reveals that multi-spectral remote sensing data are integrated with high-resolution remote sensing data, and enhanced extraction and visual description of weak remote sensing information are used for prospecting. This model has tested in the given gold deposit, and used successfully in Au-Cu prospecting in the Kalatage area.

  7. Production of biologically inert Teflon thin layers on the surface of allergenic metal objects by pulsed laser deposition technology

    Science.gov (United States)

    Hopp, B.; Smausz, T.; Kresz, N.; Nagy, P. M.; Juhász, A.; Ignácz, F.; Márton, Z.

    Allergic-type diseases are current nowadays, and they are frequently caused by certain metals. We demonstrated that the metal objects can be covered by Teflon protective thin layers using a pulsed laser deposition procedure. An ArF excimer laser beam was focused onto the surface of pressed PTFE powder pellets; the applied fluences were 7.5-7.7 J/cm2. Teflon films were deposited on fourteen-carat gold, silver and titanium plates. The number of ablating pulses was 10000. Post-annealing of the films was carried out in atmospheric air at oven temperatures between 320 and 500 °C. The thickness of the thin layers was around 5 μm. The prepared films were granular without heat treatment or after annealing at a temperature below 340 °C. At 360 °C a crystalline, contiguous, smooth, very compact and pinhole-free thin layer was produced; a melted and re-solidified morphology was observed above 420 °C. The adhesion strength between the Teflon films and the metal substrates was determined. This could exceed 1-4 MPa depending on the treatment temperature. It was proved that the prepared Teflon layers can be suitable for prevention of contact between the human body and allergen metals and so for avoidance of metal allergy.

  8. Impact of Formulation Properties and Process Parameters on the Dispensing and Depositioning of Drug Nanosuspensions Using Micro-Valve Technology.

    Science.gov (United States)

    Bonhoeffer, Bastian; Kwade, Arno; Juhnke, Michael

    2017-04-01

    Flexible manufacturing processes with continuously adjustable dose strengths are considered particularly innovative and interesting for applications in personalized medicine, continuous manufacturing, or early drug development. A piezo-actuated micro-valve has been investigated for the dispensing and depositioning of drug nanosuspensions onto substrates to facilitate the manufacturing of solid oral dosage forms. The investigated micro-valve has been characterized regarding dispensing behavior, mass flow, accuracy, and robustness. The amount of dispensed drug compound during 1 dispensing event could be continuously adjusted from a few micrograms to several milligrams with high accuracy. Fluid properties, dispensing parameters of the micro-valve, and the resulting steady state mass flow could be correlated adequately for low-viscous drug nanosuspensions. High-speed imaging was used to investigate the dispensing behavior of the micro-valve regarding the evolution of the dispensed drug nanosuspension after ejection from the nozzle and the behavior during impact on flat and dry solid substrates. The experimentally determined breakup length of the dispensed liquid jet could be correlated with a semiempirical equation. From image sequences of the jet impact, We-Re phase diagrams could be established, providing a profound understanding and systematic guidance for the controlled depositioning of the entire dispensed drug nanosuspension onto the substrate.

  9. Flexible a-Si:H/nc-Si:H tandem thin film silicon solar cells on plastic substrates with i-layers made by hot-wire CVD

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hongbo; Werf, C.H.M. van der; Rath, J.K. [Utrecht University, Faculty of Science, SID - Physics of Devices, Utrecht (Netherlands); Borreman, A. [Helianthos b.v., Arnhem (Netherlands); Schropp, Ruud E.I.

    2008-08-15

    In this letter we report the result of an a-Si:H/nc-Si:H tandem thin film silicon solar mini-module fabricated on plastic foil containing intrinsic silicon layers made by hot-wire CVD (efficiency 7.4%, monolithically series-connected, aperture area 25 cm{sup 2}). We used the Helianthos cell transfer process. The cells were first deposited on a temporary aluminum foil carrier, which allows the use of the optimal processing temperatures, and then transferred to a plastic foil. This letter reports the characteristics of the flexible solar cells obtained in this manner, and compares the results with those obtained on reference glass substrates. The research focus for implementation of the hot-wire CVD technique for the roll-to-roll process is also discussed. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Evaluation and development of integrated technology of rare metal concentrate production in high-level ore processing at Zashikhinsk deposit

    Science.gov (United States)

    Khokhulya, MS; Mukhina, TN; Ivanova, V. A.; Mitrofanova, G. V.; Fomin, A. V.; Sokolov, VD

    2017-02-01

    The authors discuss material constitution of columbite ore sample and recommend optimized pretreatment modes to obtain ball milling products at the maximum dissociation of ore minerals in aggregates. A concentration technology is proposed, with division of material into two flows –0.315 mm and –0.2 mm in sizes, generated in the milling and screening cycles and subjected to gravity–magnetic and magnetic–gravity treatment, respectively. It is shown that the technology ensures production of both tantalum–niobium and zircon concentrates. It has become possible to additionally recover rare metal components Nb2O5 and ZrO2 from tailings through flotation.

  11. ElectroSpark Deposition

    Science.gov (United States)

    2007-01-25

    ElectroSpark Deposition Hard Chrome Alternatives Team Joint Cadmium Alternatives Team Canadian Hard Chrome Alternatives Team Joint Group on Pollution...00-2007 to 00-00-2007 4. TITLE AND SUBTITLE ElectroSpark Deposition 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S...Processes, Inc. ElectroSpark Deposition (ESD) Results of Materials Testing and Technology Insertion January 25, 2007 Advanced Surfaces And Processes, Inc. 3

  12. CVD risk factors and ethnicity--a homogeneous relationship?

    Science.gov (United States)

    Forouhi, Nita G; Sattar, Naveed

    2006-04-01

    Current understanding of cardiovascular disease risk (CVD) is derived largely from studies of Caucasians of European origin. However, people of certain ethnic groups experience a disproportionately greater burden of CVD including coronary heart disease (CHD) and stroke. Adoption of a Westernised lifestyle has different effects on metabolic and vascular dysfunction across populations, e.g. South Asians have a higher prevalence of coronary heart disease (CHD) and cardiovascular mortality compared with Europeans. African-Americans demonstrate higher rates of CHD and stroke while African/Caribbeans in the UK have lower CHD rates and higher stroke rates than British Europeans. Other non-European groups such as the Chinese and Japanese exhibit consistently high rates of stroke but not CHD, while Mexican Americans have a higher prevalence of both stroke and CHD, and North American native Indians also have high rates of CHD. While conventional cardiovascular risk factors such as smoking, blood pressure and total cholesterol predict risk within these ethnic groups, they do not fully account for the differences in risk between ethnic groups, suggesting that alternative explanations might exist. Ethnic groups show differences in levels of visceral adiposity, insulin resistance, and novel risk markers such as C-reactive protein (CRP), adiponectin and plasma homocysteine. The marked differences across racial and ethnic groups in disease risk are likely due in part to each of genetic, host susceptibility and environmental factors, and can provide valuable aetiological clues to differences in patterns of disease presentation, therapeutic needs and response to treatment. Ongoing studies should increase understanding of ethnicity as a potential independent risk factor, thus enabling better identification of treatment targets and selection of therapy in specific populations.

  13. Microstrain and residual stress in thin-films made from silver nanoparticles deposited by inkjet-printing technology

    NARCIS (Netherlands)

    Cauchois, R.; Borbély, A.; Gergaud, P.; Saadaoui, M.; Inal, K.

    2014-01-01

    Colloidal suspensions of nanoparticles are increasingly employed in the fabrication process of electronic devices using inkjet-printing technology and a consecutive thermal treatment. The evolution of internal stresses during the conversion of silver nanoparticle-based ink into a metallic thin-film

  14. Tantalum coating on porous Ti6Al4V scaffold using chemical vapor deposition and preliminary biological evaluation.

    Science.gov (United States)

    Li, Xiang; Wang, Lin; Yu, Xiaoming; Feng, Yafei; Wang, Chengtao; Yang, Ke; Su, Daniel

    2013-07-01

    Porous tantalum (Ta), produced via chemical vapor deposition (CVD) of commercially pure Ta onto a vitreous carbon, is currently available for use in orthopedic applications. However, the relatively high manufacturing cost and the incapability to produce customized implant using medical image data have limited its application to gain widespread acceptance. In this study, Ta film was deposited on porous Ti6Al4V scaffolds using CVD technique. Digital microscopy and scanning electron microscopy indicated that the Ta coating evenly covered the entire scaffold structure. X-ray diffraction analysis showed that the coating consisted of α and β phases of Ta. Goat mesenchymal stem cells were seeded and cultured on the Ti6Al4V scaffolds with and without coating. The tetrazolium-based colorimetric assay exhibited better cell adhesion and proliferation on Ta-coated scaffolds compared with uncoated scaffolds. The porous scaffolds were subsequently implanted in goats for 12weeks. Histological analysis revealed similar bone formation around the periphery of the coated and uncoated implants, but bone ingrowth is better within the Ta-coated scaffolds. To demonstrate the ability of producing custom implant for clinical applications via this technology, we designed and fabricated a porous Ti6Al4V scaffold with segmental mandibular shape derived from patient computerized tomography data.

  15. Evaluation of image uniformity and radiolucency for computed tomography phantom made of 3-dimensional printing of fused deposition modeling technology by using acrylonitrile but audience styrene resin

    Energy Technology Data Exchange (ETDEWEB)

    Seoung, Youl Hun [Dept. of of Radiological Science, Cheongju University, Cheongju (Korea, Republic of)

    2016-09-15

    The purpose of this study was to evaluate the radiolucency for the phantom output to the 3D printing technology. The 3D printing technology was applied for FDM (fused deposition modeling) method and was used the material of ABS (acrylonitrile butadiene styrene) resin. The phantom was designed in cylindrical uniformity. An image uniformity was measured by a cross-sectional images of the 3D printed phantom obtained from the CT equipment. The evaluation of radiolucency was measured exposure dose by the inserted ion-chamber from the 3D printed phantom. As a results, the average of uniformity in the cross-sectional CT image was 2.70 HU and the correlation of radiolucency between PMMA CT phantom and 3D printed ABS phantom is found to have a high correlation to 0.976. In the future, this results will be expected to be used as the basis for the phantom production of the radiation quality control by used 3D printing technology.

  16. Oxidative chemical vapor deposition of polyaniline thin films.

    Science.gov (United States)

    Smolin, Yuriy Y; Soroush, Masoud; Lau, Kenneth K S

    2017-01-01

    Polyaniline (PANI) is synthesized via oxidative chemical vapor deposition (oCVD) using aniline as monomer and antimony pentachloride as oxidant. Microscopy and spectroscopy indicate that oCVD processing conditions influence the PANI film chemistry, oxidation, and doping level. Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) indicate that a substrate temperature of 90 °C is needed to minimize the formation of oligomers during polymerization. Lower substrate temperatures, such as 25 °C, lead to a film that mostly includes oligomers. Increasing the oxidant flowrate to nearly match the monomer flowrate favors the deposition of PANI in the emeraldine state, and varying the oxidant flowrate can directly influence the oxidation state of PANI. Changing the reactor pressure from 700 to 35 mTorr does not have a significant effect on the deposited film chemistry, indicating that the oCVD PANI process is not concentration dependent. This work shows that oCVD can be used for depositing PANI and for effectively controlling the chemical state of PANI.

  17. Multilayer CVD Diamond Coatings in the Machining of an Al6061-15 Vol % Al2O3 Composite

    Directory of Open Access Journals (Sweden)

    Mohammadmehdi Shabani

    2017-10-01

    Full Text Available Ceramic cutting inserts coated with ten-fold alternating micro- and nanocrystalline diamond (MCD/NCD layers grown by hot filament chemical vapor deposition (CVD were tested in the machining of an Al based metallic matrix composite (MMC containing 15 vol % Al2O3 particles. Inserts with total coating thicknesses of approximately 12 µm and 24 µm were produced and used in turning: cutting speed (v of 250 to 1000 m·min−1; depth of cut (DOC from 0.5 to 3 mm and feed (f between 0.1 and 0.4 mm·rev−1. The main cutting force increases linearly with DOC (ca. 294 N per mm and with feed (ca. 640 N per mm·rev−1. The thicker coatings work within the following limits: DOC up to 1.5 mm and maximum speeds of 750 m·min−1 for feeds up to 0.4 mm·rev−1. Flank wear is predominant but crater wear is also observed due to the negative tool normal rake. Layer-by-layer wear of the tool rake, and not total delamination from the substrate, evidenced one of the advantages of using a multilayer design. The MCD/NCD multilayer diamond coated indexable inserts have longer tool life than most CVD diamond systems and behave as well as most polycrystalline diamond (PCD tools.

  18. Influence of bowl shaped substrate holder on growth of polymeric DLC film in a microwave plasma CVD reactor

    Indian Academy of Sciences (India)

    Sambita Sahoo; S K Pradhan; Venkateswarlu Bhavanasi; Swati S Pradhan; S N Sarangi; P K Barhai

    2012-12-01

    The properties of diamond like carbon (DLC) films grown in modified microwave plasma CVD reactor is presented in this paper. By using bowl shaped steel substrate holder in a MW plasma CVD reactor (without ECR), films have been grown at relatively high pressure (20Torr) and at low temperature (without heating). The input microwave power was about 300W. Earlier, under the same growth conditions, no deposition was achieved when flat molybdenum/steel substrate holders were used. In this study, two different designs of bowl shaped steel substrate holder at different bias have been experimented. Raman spectra confirm the DLC characteristics of the films. FTIR results indicate that the carbon is bonded in the 3 form with hydrogen, and this characteristic is more pronounced when smaller holder is used. UV-visible spectra show high visible transmittance (∼85%) for films grown in both the holders. The nanoindentation hardness of the films have a wide range, about 4–16GPa. Field emission scanning electron microscope (FESEM) images reveal that the films have featureless and smooth surface morphology. These films are polymeric in nature with moderately high hardness, which may be useful as anti-scratch and anti-corrosive coatings.

  19. Combined sonochemical/CVD method for preparation of nanostructured carbon-doped TiO2 thin film

    Science.gov (United States)

    Rasoulnezhad, Hossein; Kavei, Ghassem; Ahmadi, Kamran; Rahimipour, Mohammad Reza

    2017-06-01

    The present work reports the successful synthesis of the nanostructured carbon-doped TiO2 thin films on glass substrate by combination of chemical vapor deposition (CVD) and ultrasonic methods, for the first time. In this method the ultrasound waves act as nebulizer for converting of sonochemically prepared TiO2 sol to the mist particles. These mist particles were thermally decomposed in subsequent CVD chamber at 320 °C to produce the carbon-doped TiO2 thin films. The obtained thin films were characterized by means of X-ray Diffraction (XRD), Raman spectroscopy, diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. The results show that the prepared thin films have anatase crystal structure and nanorod morphology, which calcination of them at 800 °C results in the conversion of nanorods to nanoparticles. In addition, the prepared samples have high transparency, monodispersity and homogeneity. The presence of the carbon element in the structure of the thin films causes the narrowing of the band-gap energy of TiO2 to about 2.8 eV, which results in the improvement of visible light absorption capabilities of the thin film.

  20. Optical and structural properties of polycrystalline CVD diamond films grown on fused silica optical fibres pre-treated by high-power sonication seeding

    Science.gov (United States)

    Bogdanowicz, R.; Śmietana, M.; Gnyba, M.; Gołunski, Ł.; Ryl, J.; Gardas, M.

    2014-09-01

    In this paper, the growth of polycrystalline chemical vapour deposition (CVD) diamond thin films on fused silica optical fibres has been investigated. The research results show that the effective substrate seeding process can lower defect nucleation, and it simultaneously increases surface encapsulation. However, the growth process on glass requires high seeding density. The effects of suspension type and ultrasonic power were the specific objects of investigation. In order to increase the diamond density, glass substrates were seeded using a high-power sonication process. The highest applied power of sonotrode reached 72 W during the performed experiments. The two, most common diamond seeding suspensions were used, i.e. detonation nanodiamond dispersed in (a) dimethyl sulfoxide and (b) deionised water. The CVD diamond nucleation and growth processes were performed using microwave plasma assisted chemical vapour deposition system. Next, the seeding efficiency was determined and compared using the numerical analysis of scanning electron microscopy images. The molecular composition of nucleated diamond was examined with micro-Raman spectroscopy. The sp3/sp2 band ratio was calculated using Raman spectra deconvolution method. Thickness, roughness, and optical properties of the nanodiamond films in UV-vis wavelength range were investigated by means of spectroscopic ellipsometry. It has been demonstrated that the high-power sonication process can improve the seeding efficiency on glass substrates. However, it can also cause significant erosion defects at the fibre surface. We believe that the proposed growth method can be effectively applied to manufacture the novel optical fibre sensors. Due to high chemical and mechanical resistance of CVD diamond films, deposition of such films on the sensors is highly desirable. This method enables omitting the deposition of an additional adhesion interlayer at the glass-nanocrystalline interface, and thus potentially increases

  1. Metallic/semiconducting ratio of carbon nanotubes in a bundle prepared using CVD technique

    Indian Academy of Sciences (India)

    Khurshed Ahmad Shah; S S Islam; H S Mavi; A K Shukla; Harsh

    2006-08-01

    We present an investigation of the nature of single-walled carbon nanotubes (SWCNTs) in a bundle by resonant Raman spectroscopy. The calculation has been done for the three peak positions in radial breathing mode (RBM) spectra obtained by using a laser excitation wavelength () of 633 nm from He–Ne laser on SWNT bundle sample prepared by chemical vapor deposition (CVD) technique using iron catalyst at 800° C. The detailed analysis in the present study is focused on peak positions 162 cm-1, 186 cm-1, and 216 cm-1. The first step of the analysis is to construct a list of possible (, ) pairs from the diameters calculated from the RBM peak positions. The parameters of SWNTs studied gives in-depth understanding of many symmetry, resonance and characteristic properties of SWNT bundles. Our results indicate that the contribution of metallic SWNTs in the bundle is small at RBM peak positions 162 cm-1, 186 cm-1 and in agreement with pervious results at peak position 216 cm-1.

  2. Photodegradation of benzene by TiO2 nanoparticles prepared by flame CVD process

    Institute of Scientific and Technical Information of China (English)

    Hongyong Xie; Luping Zhu; Lingling Wang; Shengwen Chen; Dandan Yang; Lijun Yang; Guilan Gao; Hao Yuan

    2011-01-01

    Photodegradation of benzene at ppb levels by mixed-phase TiO2 nanoparticles,synthesized by the oxidation of TiCl4 in propane/air turbulent flame chemical vapor deposition (CVD) process,is investigated experimentally by using a tubular photoreactor with thin TiO2 films coated on the reactor wall by sedimentation. Effects of inlet benzene concentration from 10 to 300 μg/m3,futile mass fraction from about 20 to 50% and photoluminescence (PL) intensity of TiO2 nanoparticles on degradation degree are examined under the conditions of 70% relative humidity,38 μg/cm2 catalyst loading,24 mW/cm2 UV irradiation of 254 nm and 5.7 s residence time in the reactor. Based on experimental results,separation of photoinduced electron (e-) and hole (h+) pairs by rutile phase is discussed as photo-induced electron (e-) in anatase phase will migrate to rutile surface due to that the potential of conductive band of rutile is lower than that of anatase,leading to more holes ready on anatase surface for oxidation reactions.

  3. Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Chang Goo; Kang, Jang Won; Lee, Seung Yong; Hwang, Hyeon Jun; Lee, Young Gon; Park, Seong-Ju; Lee, Byoung Hun [School of Material Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712 (Korea, Republic of); Lee, Sang Kyung; Cho, Chun Hum [Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712 (Korea, Republic of); Heo, Jinseong; Chung, Hyun-Jong; Yang, Heejun [Semiconductor Devices Lab, Samsung Advanced Institute of Technology, Yongin (Korea, Republic of); Seo, Sunae [Department of Physics, Sejong University, Gunja-Dong, Kwanggin-gu, Seoul (Korea, Republic of); Ko, Ki Young; Ahn, Jinho, E-mail: bhl@gist.ac.kr [Division of Materials Science and Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791 (Korea, Republic of)

    2011-07-22

    A graphene nanoribbon (GNR) is an important basic structure to open a bandgap in graphene. The GNR processes reported in the literature are complex, time-consuming, and expensive; moreover, the device yield is relatively low. In this paper, a simple new process to fabricate a long and straight graphene nanoribbon with a high yield has been proposed. This process utilizes CVD graphene substrate and a ZnO nanowire as the hardmask for patterning. 8 {mu}m long and 50-100 nm wide GNRs were successfully demonstrated in high density without any trimming, and {approx} 10% device yield was realized with a top-down patterning process. After passivating the surfaces of the GNRs using a low temperature atomic layer deposition (ALD) of Al{sub 2}O{sub 3}, high performance GNR MOSFETs with symmetric drain-current-gate-voltage (I{sub d}-V{sub g}) curves were demonstrated and a field effect mobility up to {approx} 1200 cm{sup 2} V{sup -1} s{sup -1} was achieved at V{sub d} = 10 mV.

  4. High Current-Induced Electron Redistribution in a CVD-Grown Graphene Wide Constriction

    Directory of Open Access Journals (Sweden)

    Chiashain Chuang

    2016-01-01

    Full Text Available Investigating the charge transport behavior in one-dimensional quantum confined system such as the localized states and interference effects due to the nanoscale grain boundaries and merged domains in wide chemical vapor deposition graphene constriction is highly desirable since it would help to realize industrial graphene-based electronic device applications. Our data suggests a crossover from interference coherent transport to carriers flushing into grain boundaries and merged domains when increasing the current. Moreover, many-body fermionic carriers with disordered system in our case can be statistically described by mean-field Gross-Pitaevskii equation via a single wave function by means of the quantum hydrodynamic approximation. The novel numerical simulation method supports the experimental results and suggests that the extreme high barrier potential regions on graphene from the grain boundaries and merged domains can be strongly affected by additional hot charges. Such interesting results could pave the way for quantum transport device by supplying additional hot current to flood into the grain boundaries and merged domains in one-dimensional quantum confined CVD graphene, a great advantage for developing graphene-based coherent electronic devices.

  5. Commissioning and first operation of the pCVD diamond ATLAS Beam Conditions Monitor

    CERN Document Server

    Dobos, D

    2009-01-01

    The main aim of the ATLAS Beam Conditions Monitor is to protect the ATLAS Inner Detector silicon trackers from high radiation doses caused by LHC beam incidents, e.g. magnet failures. The BCM uses in total 16 1x1 cm2 500 μm thick polycrystalline chemical vapor deposition (pCVD) diamond sensors. They are arranged in 8 positions around the ATLAS LHC interaction point. Time difference measurements with sub nanosecond resolution are performed to distinguish between particles from a collision and spray particles from a beam incident. An abundance of the latter leads the BCM to provoke an abort of the LHC beam. A FPGA based readout system with a sampling rate of 2.56 GHz performs the online data analysis and interfaces the results to ATLAS and the beam abort system. The BCM diamond sensors, the detector modules and their readout system are described. Results of the operation with the first LHC beams are reported and results of commissioning and timing measurements (e.g. with cosmic muons) in preparation for first ...

  6. The High performance of nanocrystalline CVD diamond coated hip joints in wear simulator test.

    Science.gov (United States)

    Maru, M M; Amaral, M; Rodrigues, S P; Santos, R; Gouvea, C P; Archanjo, B S; Trommer, R M; Oliveira, F J; Silva, R F; Achete, C A

    2015-09-01

    The superior biotribological performance of nanocrystalline diamond (NCD) coatings grown by a chemical vapor deposition (CVD) method was already shown to demonstrate high wear resistance in ball on plate experiments under physiological liquid lubrication. However, tests with a close-to-real approach were missing and this constitutes the aim of the present work. Hip joint wear simulator tests were performed with cups and heads made of silicon nitride coated with NCD of ~10 μm in thickness. Five million testing cycles (Mc) were run, which represent nearly five years of hip joint implant activity in a patient. For the wear analysis, gravimetry, profilometry, scanning electron microscopy and Raman spectroscopy techniques were used. After 0.5 Mc of wear test, truncation of the protruded regions of the NCD film happened as a result of a fine-scale abrasive wear mechanism, evolving to extensive plateau regions and highly polished surface condition (Ra<10nm). Such surface modification took place without any catastrophic features as cracking, grain pullouts or delamination of the coatings. A steady state volumetric wear rate of 0.02 mm(3)/Mc, equivalent to a linear wear of 0.27 μm/Mc favorably compares with the best performance reported in the literature for the fourth generation alumina ceramic (0.05 mm(3)/Mc). Also, squeaking, quite common phenomenon in hard-on-hard systems, was absent in the present all-NCD system.

  7. New CVD-based method for the growth of high-quality crystalline zinc oxide layers

    Science.gov (United States)

    Huber, Florian; Madel, Manfred; Reiser, Anton; Bauer, Sebastian; Thonke, Klaus

    2016-07-01

    High-quality zinc oxide (ZnO) layers were grown using a new chemical vapour deposition (CVD)-based low-cost growth method. The process is characterized by total simplicity, high growth rates, and cheap, less hazardous precursors. To produce elementary zinc vapour, methane (CH4) is used to reduce a ZnO powder. By re-oxidizing the zinc with pure oxygen, highly crystalline ZnO layers were grown on gallium nitride (GaN) layers and on sapphire substrates with an aluminum nitride (AlN) nucleation layer. Using simple CH4 as precursor has the big advantage of good controllability and the avoidance of highly toxic gases like nitrogen oxides. In photoluminescence (PL) measurements the samples show a strong near-band-edge emission and a sharp line width at 5 K. The good crystal quality has been confirmed in high resolution X-ray diffraction (HRXRD) measurements. This new growth method has great potential for industrial large-scale production of high-quality single crystal ZnO layers.

  8. Vascular calcifications as prognostic markers of CVD events in chest CT

    NARCIS (Netherlands)

    Jacobs, P.C.A.

    2010-01-01

    Cardiovascular disease (CVD) is one of the most common diseases affecting people throughout the world and second only to cancer as the most frequent cause of death in the Netherlands. Early detection of asymptomatic individuals at high risk of developing CVD events is an important goal since modific

  9. Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

    OpenAIRE

    2016-01-01

    Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from R...

  10. Deposition uniformity inspection in IC wafer surface

    Science.gov (United States)

    Li, W. C.; Lin, Y. T.; Jeng, J. J.; Chang, C. L.

    2014-03-01

    This paper focuses on the task of automatic visual inspection of color uniformity on the surface of integrated circuits (IC) wafers arising from the layering process. The oxide thickness uniformity within a given wafer with a desired target thickness is of great importance for modern semiconductor circuits with small oxide thickness. The non-uniform chemical vapor deposition (CVD) on a wafer surface will proceed to fail testing in Wafer Acceptance Test (WAT). Early detection of non-uniform deposition in a wafer surface can reduce material waste and improve production yields. The fastest and most low-priced inspection method is a machine vision-based inspection system. In this paper, the proposed visual inspection system is based on the color representations which were reflected from wafer surface. The regions of non-uniform deposition present different colors from the uniform background in a wafer surface. The proposed inspection technique first learns the color data via color space transformation from uniform deposition of normal wafer surfaces. The individual small region statistical comparison scheme then proceeds to the testing wafers. Experimental results show that the proposed method can effectively detect the non-uniform deposition regions on the wafer surface. The inspection time of the deposited wafers is quite compatible with the atmospheric pressure CVD time.

  11. Evaluation of niobium dimethylamino-ethoxide for chemical vapour deposition of niobium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Dabirian, Ali [Laboratory for Photonic Materials and Characterization, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 17, 1015 Lausanne (Switzerland); Kuzminykh, Yury, E-mail: yury.kuzminykh@empa.ch [Laboratory for Photonic Materials and Characterization, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 17, 1015 Lausanne (Switzerland); Laboratory for Advanced Materials Processing, Empa, Swiss Federal Laboratories for Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland); Wagner, Estelle; Benvenuti, Giacomo [3D-Oxides, 70 Rue G. Eiffel Technoparc, 01630 St Genis Pouilly (France); ABCD Technology, 12 route de Champ-Colin, 1260 Nyon (Switzerland); Rushworth, Simon [Tyndall National Institute, Lee Maltings, Dyke Parade, Cork (Ireland); Hoffmann, Patrik, E-mail: patrik.hoffmann@empa.ch [Laboratory for Photonic Materials and Characterization, Ecole Polytechnique Fédérale de Lausanne (EPFL), Station 17, 1015 Lausanne (Switzerland); Laboratory for Advanced Materials Processing, Empa, Swiss Federal Laboratories for Materials Science and Technology, Feuerwerkerstrasse 39, 3602 Thun (Switzerland)

    2014-11-28

    Chemical vapour deposition (CVD) processes depend on the availability of suitable precursors. Precursors that deliver a stable vapour pressure are favourable in classical CVD processes, as they ensure process reproducibility. In high vacuum CVD (HV-CVD) process vapour pressure stability of the precursor is of particular importance, since no carrier gas assisted transport can be used. The dimeric Nb{sub 2}(OEt){sub 10} does not fulfil this requirement since it partially dissociates upon heating. Dimethylamino functionalization of an ethoxy ligand of Nb(OEt){sub 5} acts as an octahedral field completing entity and leads to Nb(OEt){sub 4}(dmae). We show that Nb(OEt){sub 4}(dmae) evaporates as monomeric molecule and ensures a stable vapour pressure and, consequently, stable flow. A set of HV-CVD experiments were conducted using this precursor by projecting a graded molecular beam of the precursor onto the substrate at deposition temperatures from 320 °C to 650 °C. Film growth rates ranging from 8 nm·h{sup −1} to values larger than 400 nm·h{sup −1} can be obtained in this system illustrating the high level of control available over the film growth process. Classical CVD limiting conditions along with the recently reported adsorption–reaction limited conditions are observed and the chemical composition, and microstructural and optical properties of the films are related to the corresponding growth regime. Nb(OEt){sub 4}(dmae) provides a large process window of deposition temperatures and precursor fluxes over which carbon-free and polycrystalline niobium oxide films with growth rates proportional to precursor flux are obtained. This feature makes Nb(OEt){sub 4}(dmae) an attractive precursor for combinatorial CVD of niobium containing complex oxide films that are finding an increasing interest in photonics and photoelectrochemical water splitting applications. The adsorption–reaction limited conditions provide extremely small growth rates comparable to an

  12. 自沉吸附PVC复合地板的制备技术%PREPARATION TECHNOLOGY OF SELF-DEPOSIT ADSORPTION PVC COMPOUND FLOOR

    Institute of Scientific and Technical Information of China (English)

    杨崇岭; 孙立; 田波; 黄志华; 关丽涛

    2011-01-01

    The major characteristics, product structure, producing formula, preparation technology and quality control of the self-deposit adsorption PVC compound floor were introduced detaily, as well as the PVC compound floor was compared with ceramic floor, marble floor and wood floor.%对耐宝塑胶制品有限公司生产的自沉吸附PVC复合地板的主要特点、制品结构、生产配方、制作工艺及品质控制等进行了详细的说明,并与陶瓷、大理石和未材等其它地板材料进行了简单比较.

  13. Application of a Coated Film Catalyst Layer Model to a High Temperature Polymer Electrolyte Membrane Fuel Cell with Low Catalyst Loading Produced by Reactive Spray Deposition Technology

    Directory of Open Access Journals (Sweden)

    Timothy D. Myles

    2015-10-01

    Full Text Available In this study, a semi-empirical model is presented that correlates to previously obtained experimental overpotential data for a high temperature polymer electrolyte membrane fuel cell (HT-PEMFC. The goal is to reinforce the understanding of the performance of the cell from a modeling perspective. The HT-PEMFC membrane electrode assemblies (MEAs were constructed utilizing an 85 wt. % phosphoric acid doped Advent TPS® membranes for the electrolyte and gas diffusion electrodes (GDEs manufactured by Reactive Spray Deposition Technology (RSDT. MEAs with varying ratios of PTFE binder to carbon support material (I/C ratio were manufactured and their performance at various operating temperatures was recorded. The semi-empirical model derivation was based on the coated film catalyst layer approach and was calibrated to the experimental data by a least squares method. The behavior of important physical parameters as a function of I/C ratio and operating temperature were explored.

  14. EFFECT OF Fe2O3 ON WELDING TECHNOLOGY AND MECHANICAL PROPERTIES OF WELD METAL DEPOSITED BY SELF-SHIELDED FLUX CORED WIRE

    Institute of Scientific and Technical Information of China (English)

    Yu Ping; Pan Chuan; Xue Jin; Li Zhengbang

    2005-01-01

    Five experimental self-shielded flux cored wires are fabricated with different amount of Fe2O3 in the flux. The effect of Fe2O3 on welding technology and mechanical properties of weld metals deposited by these wires are studied. The results show that with the increase of Fe2O3 in the mix, the melting point of the pretreated mix is increased. LiBaF3 and BaFe12O19, which are very low in inherent moisture, are formed after the pretreatment. The mechanical properties are evaluated to the weld metals. The low temperature notch toughness of the weld metals is increased linearly with the Fe2O3 content in the flux due to the balance between Fe2O3 and residual Al in the weld metal. The optimum Fe2O3 content in flux is 2.5%~3.5 %.

  15. Electroless nickel alloy deposition on SiO2 for application as a diffusion barrier and seed layer in 3D copper interconnect technology.

    Science.gov (United States)

    Kim, Tae-Yoo; Son, Hwa-Jin; Lim, Seung-Kyu; Song, Young-Il; Park, Hwa-Sun; Suh, Su-Jeong

    2014-12-01

    Electroless Ni-P films were investigated with the aim of application as barrier and seed layers in 3D interconnect technology. Different shapes of blind-via holes were fabricated with a deep reactive ion etcher and SiO2 formed on these holes as an insulating layer. The surface of the substrate has been made hydrophilic by O2 plasma treatment with 100 W of power for 20 min. Electroless Ni-P films were deposited as both a diffusion barrier and a seed layer for Cu filling process. Prior to plating, substrates were activated in a palladium chloride solution after sensitization in a tin chloride solution with various conditions in order to deposit uniform films in TSV. After the formation of the electroless barrier layer, electro Cu was plated directly on the barrier layer. Ni-P films fabricated in blind-via holes were observed by scanning electron microscope. Energy dispersive spectroscopy line scanning was carried out for evaluating the diffusion barrier properties of the Ni-P films. The electroless Ni-P layer worked well as a Cu diffusion barrier until 300 degrees C. However, Cu ions diffused into barrier layer when the annealing temperature increases over 400 degrees C.

  16. Research on Factors influencing Oil Well Paraffin Deposit and Paraffin Control Technology%油井结蜡影响因素及防蜡技术研究

    Institute of Scientific and Technical Information of China (English)

    宋君

    2015-01-01

    在油田开发过程中,油井结蜡是一个常见的问题,由于原油经油管上升到地面的过程中,温度压力不断降低,并伴有气体析出,导致原本溶解在原油中的石蜡不断析出,结晶,沉积在油管和生产设备上,影响了正常的生产。介绍了国内外油井防蜡技术研究现状和结蜡机理研究进展。%In the oil field development, paraffin deposition and scale buildup are common problems. Due to temperature and pressure reducing with crude oil rising to the ground in the pipeline, and the gas precipitation, paraffin dissolved in crude oil continuously precipitates, crystallizes and deposits on the pipe wall and production equipments, which affects the normal production. In this paper, research progress in oil well paraffin control technology was summarized, and wax precipitation mechanism was discussed.

  17. Expanding thermal plasma chemical vapour deposition of ZnO:Al layers for CIGS solar cells

    NARCIS (Netherlands)

    Sharma, K.; Williams, B.L.; Mittal, A.; Knoops, H.C.M.; Kniknie, B.J.; Bakker, N.J.; Kessels, W.M.M.; Schropp, R.E.I.; Creatore, M.

    2014-01-01

    Aluminium-doped zinc oxide (ZnO:Al) grown by expanding thermal plasma chemical vapour deposition (ETP-CVD) has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO

  18. Expanding thermal plasma chemical vapour deposition of ZnO:Al layers for CIGS solar cells

    NARCIS (Netherlands)

    Sharma, K.; Williams, B.L.; Mittal, A.; Knoops, H.C.M.; Kniknie, B.J.; Bakker, N.J.; Kessels, W.M.M.; Schropp, R.E.I.; Creatore, M.

    2014-01-01

    Aluminium-doped zinc oxide (ZnO:Al) grown by expanding thermal plasma chemical vapour deposition (ETP-CVD) has demonstrated excellent electrical and optical properties, which make it an attractive candidate as a transparent conductive oxide for photovoltaic applications. However, when depositing ZnO

  19. CVD and obesity in transitional Syria: a perspective from the Middle East

    Directory of Open Access Journals (Sweden)

    Baaj MK

    2012-03-01

    Full Text Available Hani Barakat1, Hanniya Barakat1, Mohamad K Baaj21Kalamoon Private University Medical School, Deir Attieh, Syria; 2Aleppo University Medical School, Aleppo, SyriaPurpose: Syria is caught in the middle of a disruptive nutritional transition. Its healthcare system is distracted by challenges and successes in other areas while neglecting to address the onslaught of Syria's cardiovascular disease (CVD epidemic. Despite the official viewpoint touting improvement in health indicators, current trends jeopardize population health, and several surveys in the Syrian population signal the epidemic spreading far and wide. The goal is to counteract the indifference towards obesity as a threat to Syrian's health, as the country is slowly becoming a leader in CVD mortality globally.Methods: PubMed, World Health Organization, and official government websites were searched for primary surveys in Syria related to CVD morbidity, mortality, and risk factors. Inclusion criteria ensured that results maximized relevance while producing comparable studies. Statistical analysis was applied to detect the most common risk factor and significant differences in risk factor prevalence and CVD rates.Results: Obesity remained the prevailing CVD risk factor except in older Syrian men, where smoking and hypertension were more common. CVD mortality was more common in males due to coronary disease, while stroke dominated female mortality. The young workforce is especially impacted, with 50% of CVD mortality occurring before age 65 years and an 81% prevalence of obesity in women over 45 years.Conclusion: Syria can overcome its slow response to the CVD epidemic and curb further deterioration by reducing obesity and, thus, inheritance and clustering of risk factors. This can be achieved via multilayered awareness and intensive parental and familial involvement. Extinguishing the CVD epidemic is readily achievable as demonstrated in other countries.Keywords: Syria, CVD, obesity, risk

  20. Atmospheric Deposition of Heavy Metals in Serbia Studied by Moss Biomonitoring, Neutron Activation Analysis and GIS Technology

    CERN Document Server

    Frontasyeva, M V; Kumar, M; Matavuly, M; Pavlov, S S; Radnovic, D; Steinnes, E

    2002-01-01

    The results of a pilot study on atmospheric deposition of heavy metals and other trace elements using the moss biomonitoring technique in the northern part of Serbia and some areas of Bosnia are presented. Samples of Hypnum cupressiforme along with some other moss types were collected at 92 sites during the summer of 2000. A total of 44 elements were determined by instrumental neutron activation analysis using epithermal neutrons. The observed levels of Cu, Zn, As, Ag, Cd, In, Sb, etc. in the area surrounding the town of Bor (Serbia) are comparable to those reported from similar industrial areas in other countries such as the Copper Basin in Poland and the South Urals of Russia. In the same region the maximum Se and Mo concentrations are the highest ever recorded in biomonitoring studies using mosses. High median concentrations of Fe and Ni in Serbian mosses are associated with a crustal component as apparent from factor analysis of the moss data. This component could be a result of windblown soil dust (most ...

  1. TECHNOLOGY AND EFFICIENCY IN USAGE OF BROWN COAL ASH FOR CEMENT AND CONCRETE MIXTURES AT THE LELCHITSKY DEPOSIT

    Directory of Open Access Journals (Sweden)

    G. D. Lyahevich

    2017-01-01

    Full Text Available Modern visions on the role of high-dispersity additives in concrete mixtures reflect a positive effect of optimal amount of ash left after combustion of solid fuel on structure and physico-mechanical characteristics of cement compositions: hardening of contact zone between cement stone and aggregates with formation of “binder – aggregate” clusters due to high surface energy of aggregate particles; reduction of total cement stone porosity in concrete while increasing volumetric concentration and aggregate dispersion; binding of calcium hydroxide by amorphized silicon of pozzolanic aggregates; increase in pozzolanic aggregate activity with its fine grinding, etc. Experimental investigations have ascertained that usage of portland cement clinker ash samples left after brown coal burning at the Lelchitsky deposit contributed to an increase of cement working life and activity. Concrete samples have been obtained that have improved physico-mechanical properties owing to introduction the following components in their composition: 2–14 % (of cement mass of ash left after brown coal burning and 1.6–2.1 % of sodium salt that is a condensation product of sulfur oxidate in aromatic hydrocarbons with formaldehyde. Efficiency of the executed work has been proved by solution of the problems pertaining to an increase of neat cement working life, cement activity, concrete strength. The paper also considers no less important problem concerning protection of the environment from contamination with ash left after burning of high-ash brown coal. 

  2. Technology assessment: environmental, health, and safety impacts associated with oil recovery from US tar-sand deposits

    Energy Technology Data Exchange (ETDEWEB)

    Daniels, J.I.; Anspaugh, L.R.; Ricker, Y.E.

    1981-10-13

    The tar-sand resources of the US have the potential to yield as much as 36 billion barrels (bbls) of oil. The tar-sand petroleum-extraction technologies now being considered for commercialization in the United States include both surface (above ground) systems and in situ (underground) procedures. The surface systems currently receiving the most attention include: (1) thermal decomposition processes (retorting); (2) suspension methods (solvent extraction); and (3) washing techniques (water separation). Underground bitumen extraction techniques now being field tested are: (1) in situ combustion; and (2) in situ steam-injection procedures. At this time, any commercial tar-sand facility in the US will have to comply with at least 7 major federal regulations in addition to state regulations; building, electrical, and fire codes; and petroleum-industry construction standards. Pollution-control methods needed by tar-sand technologies to comply with regulatory standards and to protect air, land, and water quality will probably be similar to those already proposed for commercial oil-shale systems. The costs of these systems could range from about $1.20 to $2.45 per barrel of oil produced. Estimates of potential pollution-emisson levels affecting land, air, and water were calculated from available data related to current surface and in situ tar-sand field experiments in the US. These data were then extrapolated to determine pollutant levels expected from conceptual commercial surface and in situ facilities producing 20,000 bbl/d. The likelihood-of-occurrence of these impacts was then assessed. Experience from other industries, including information concerning health and ecosystem damage from air pollutants, measurements of ground-water transport of organic pollutants, and the effectiveness of environmental-control technologies was used to make this assessment.

  3. Technology assessment: environmental, health, and safety impacts associated with oil recovery from US tar-sand deposits

    Energy Technology Data Exchange (ETDEWEB)

    Daniels, J.I.; Anspaugh, L.R.; Ricker, Y.E.

    1981-10-13

    The tar-sand resources of the US have the potential to yield as much as 36 billion barrels (bbls) of oil. The tar-sand petroleum-extraction technologies now being considered for commercialization in the United States include both surface (above ground) systems and in situ (underground) procedures. The surface systems currently receiving the most attention include: (1) thermal decomposition processes (retorting); (2) suspension methods (solvent extraction); and (3) washing techniques (water separation). Underground bitumen extraction techniques now being field tested are: (1) in situ combustion; and (2) in situ steam-injection procedures. At this time, any commercial tar-sand facility in the US will have to comply with at least 7 major federal regulations in addition to state regulations; building, electrical, and fire codes; and petroleum-industry construction standards. Pollution-control methods needed by tar-sand technologies to comply with regulatory standards and to protect air, land, and water quality will probably be similar to those already proposed for commercial oil-shale systems. The costs of these systems could range from about $1.20 to $2.45 per barrel of oil produced. Estimates of potential pollution-emisson levels affecting land, air, and water were calculated from available data related to current surface and in situ tar-sand field experiments in the US. These data were then extrapolated to determine pollutant levels expected from conceptual commercial surface and in situ facilities producing 20,000 bbl/d. The likelihood-of-occurrence of these impacts was then assessed. Experience from other industries, including information concerning health and ecosystem damage from air pollutants, measurements of ground-water transport of organic pollutants, and the effectiveness of environmental-control technologies was used to make this assessment.

  4. Chemical vapor deposition of carbon nanotubes: a review on growth mechanism and mass production.

    Science.gov (United States)

    Kumar, Mukul; Ando, Yoshinori

    2010-06-01

    This review article deals with the growth mechanism and mass production of carbon nanotubes (CNTs) by chemical vapor deposition (CVD). Different aspects of CNT synthesis and growth mechanism are reviewed in the light of latest progresses and understandings in the field. Materials aspects such as the roles of hydrocarbon, catalyst and catalyst support are discussed. Many new catalysts and new carbon sources are described. Growth-control aspects such as the effects of temperature, vapor pressure and catalyst concentration on CNT diameter distribution and single- or multi-wall formation are explained. Latest reports of metal-catalyst-free CNT growth are considered. The mass-production aspect is discussed from the perspective of a sustainable CNT technology. Existing problems and challenges of the process are addressed with future directions.

  5. Nitrogen doping of CVD multiwalled carbon nanotubes: Observation of a large g-factor shift

    Energy Technology Data Exchange (ETDEWEB)

    Mhlanga, Sabelo D., E-mail: Sabelo.Mhlanga@wits.ac.za [Molecular Sciences Institute, School of Chemistry and the DST/NRF Centre of Excellence in Strong Materials, University of the Witwatersrand, Private Bag 3, Wits, 2050 Johannesburg (South Africa); Nxumalo, Edward N.; Coville, Neil J. [Molecular Sciences Institute, School of Chemistry and the DST/NRF Centre of Excellence in Strong Materials, University of the Witwatersrand, Private Bag 3, Wits, 2050 Johannesburg (South Africa); Srinivasu, Vallabhapurapu V., E-mail: vallavs@unisa.ac.za [Department of Physics, University of South Africa, P.O. Box 392, Pretoria 0003 (South Africa)

    2011-11-01

    Highlights: {yields} High quality nitrogen doped multiwalled carbon nanotubes were synthesized using the floating catalyst CVD method. {yields} Systematic ESR measurements of the carbon products produced, in the temperature range of 293-400 K showed line widths that were in general very large {approx} kOe. {yields} A large g-factor shift in samples of N-CNTs from that of the free electron g-factor was observed. Further, the shift increased with increasing temperature. The large g shift has been analysed in terms of Elliott-Wagoner and Bottleneck models. {yields} The temperature dependence of the g shift in the N-CNT samples rules out the Elliott-Wagoner type spin-orbit coupling scenario. {yields} The large g shift and temperature dependence can be qualitatively explained in terms of Bottleneck model. - Abstract: Nitrogen doped multi-walled carbon nanotubes (N-CNTs) and undoped multi-walled carbon nanotubes (MWCNTs) were synthesized by a chemical vapour deposition (CVD) floating catalyst method. The N-CNTs were synthesized by the decomposition of a ferrocene/N-source/toluene (N-source = triethylamine, dimethylamine, acetonitrile) mixture at 900 deg. C. The undoped MWCNTs were synthesized using a ferrocene-toluene mixture without a nitrogen source under similar reaction conditions. The structure of the N-CNTs and MWCNTs was ascertained using HRTEM, SEM and Raman spectroscopy. Systematic ESR measurements of the carbon products produced, in the temperature range of 293-400 K showed line widths that were in general very large {approx} kOe. Most importantly, a large g-factor shift in samples of N-CNTs from that of the free electron g-factor was observed. Further, the shift increased with increasing temperature. The large g shift has been analysed in terms of Elliott-Wagoner and Bottleneck models. The temperature dependence of the g shift in the N-CNT samples rules out the Elliott-Wagoner type spin-orbit coupling scenario. The large g shift and temperature dependence can

  6. Optimization of a Wcl6 CVD System to Coat UO2 Powder with Tungsten

    Science.gov (United States)

    Belancik, Grace A.; Barnes, Marvin W.; Mireles, Omar; Hickman, Robert

    2015-01-01

    In order to achieve deep space exploration via Nuclear Thermal Propulsion (NTP), Marshall Space Flight Center (MSFC) is developing W-UO2 CERMET fuel elements, with focus on fabrication, testing, and process optimization. A risk of fuel loss is present due to the CTE mismatch between tungsten and UO2 in the W-60vol%UO2 fuel element, leading to high thermal stresses. This fuel loss can be reduced by coating the spherical UO2 particles with tungsten via H2/WCl6 reduction in a fluidized bed CVD system. Since the latest incarnation of the inverted reactor was completed, various minor modifications to the system design were completed, including an inverted frit sublimer. In order to optimize the parameters to achieve the desired tungsten coating thickness, a number of trials using surrogate HfO2 powder were performed. The furnace temperature was varied between 930 C and 1000degC, and the sublimer temperature was varied between 140 C and 200 C. Each trial lasted 73-82 minutes, with one lasting 205 minutes. A total of 13 trials were performed over the course of three months, two of which were re-coatings of previous trials. The powder samples were weighed before and after coating to roughly determine mass gain, and Scanning Electron Microscope (SEM) data was also obtained. Initial mass results indicated that the rate of layer deposition was lower than desired in all of the trials. SEM confirmed that while a uniform coating was obtained, the average coating thickness was 9.1% of the goal. The two re-coating trials did increase the thickness of the tungsten layer, but only to an average 14.3% of the goal. Therefore, the number of CVD runs required to fully coat one batch of material with the current configuration is not feasible for high production rates. Therefore, the system will be modified to operate with a negative pressure environment. This will allow for better gas mixing and more efficient heating of the substrate material, yielding greater tungsten coating per trial.

  7. OPTIMIZATION OF SURFACE ROUGHNESS AND TOOL FLANK WEAR IN TURNING OF AISI 304 AUSTENITIC STAINLESS STEEL WITH CVD COATED TOOL

    Directory of Open Access Journals (Sweden)

    M. KALADHAR

    2013-04-01

    Full Text Available AISI 304 austenitic stainless steel is a popularly used grade in the various fields of manufacturing because of its high ductility, high durability and excellent corrosion resistance. High work hardening, low heat conductivity and high built up edge (BUE formation made this as difficult-to- machine material. Poor surface quality and rapid tool wear are the common problems encountered while machining it. In the present work, an attempt has been made to explore the influence of machining parameters on the performance measures, surface roughness and flank wear in turning of AISI 304 austenitic stainless steel with a two layer Chemical vapour deposition(CVD coated tool. In order to achieve this, Taguchi approach has been employed. The results revealed that the cutting speed most significantly, influences both surface roughness and flank wear. In addition to this the optimal setting of process parameters and optimal ranges of performance measures are predicted.

  8. Chemical vapor deposition coating for micromachines

    Energy Technology Data Exchange (ETDEWEB)

    MANI,SEETHAMBAL S.; FLEMING,JAMES G.; SNIEGOWSKI,JEFFRY J.; DE BOER,MAARTEN P.; IRWIN,LAWRENCE W.; WALRAVEN,JEREMY A.; TANNER,DANELLE M.; DUGGER,MICHAEL T.

    2000-04-21

    Two major problems associated with Si-based MEMS devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, the authors will present a process used to selectively coat MEMS devices with tungsten using a CVD (Chemical Vapor Deposition) process. The selective W deposition process results in a very conformal coating and can potentially solve both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through silicon reduction of WF{sub 6}, which results in a self-limiting reaction. The selective deposition of W only on polysilicon surfaces prevents electrical shorts. Further, the self-limiting nature of this selective W deposition process ensures the consistency necessary for process control. Selective tungsten is deposited after the removal of the sacrificial oxides to minimize process integration problems. This tungsten coating adheres well and is hard and conducting, requirements for device performance. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release stuck parts that are contacted over small areas such as dimples. Results from tungsten deposition on MEMS structures with dimples will be presented. The effect of wet and vapor phase cleanings prior to the deposition will be discussed along with other process details. The W coating improved wear by orders of magnitude compared to uncoated parts. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable.

  9. The role of NH3 and hydrocarbon mixtures in GaN pseudo-halide CVD: a quantum chemical study.

    Science.gov (United States)

    Gadzhiev, Oleg B; Sennikov, Peter G; Petrov, Alexander I; Kachel, Krzysztof; Golka, Sebastian; Gogova, Daniela; Siche, Dietmar

    2014-11-01

    The prospects of a control for a novel gallium nitride pseudo-halide vapor phase epitaxy (PHVPE) with HCN were thoroughly analyzed for hydrocarbons-NH3-Ga gas phase on the basis of quantum chemical investigation with DFT (B3LYP, B3LYP with D3 empirical correction on dispersion interaction) and ab-initio (CASSCF, coupled clusters, and multireference configuration interaction including MRCI+Q) methods. The computational screening of reactions for different hydrocarbons (CH4, C2H6, C3H8, C2H4, and C2H2) as readily available carbon precursors for HCN formation, potential chemical transport agents, and for controlled carbon doping of deposited GaN was carried out with the B3LYP method in conjunction with basis sets up to aug-cc-pVTZ. The gas phase intermediates for the reactions in the Ga-hydrocarbon systems were predicted at different theory levels. The located π-complexes Ga…C2H2 and Ga…C2H4 were studied to determine a probable catalytic activity in reactions with NH3. A limited influence of the carbon-containing atmosphere was exhibited for the carbon doping of GaN crystal in the conventional GaN chemical vapor deposition (CVD) process with hydrocarbons injected in the gas phase. Our results provide a basis for experimental studies of GaN crystal growth with C2H4 and C2H2 as auxiliary carbon reagents for the Ga-NH3 and Ga-C-NH3 CVD systems and prerequisites for reactor design to enhance and control the PHVPE process through the HCN synthesis.

  10. Silicon Nitride Film Deposition by Photochemical Vapor Deposition Using an Argon Excimer Lamp

    Science.gov (United States)

    Maezono, Yoshinari; Toshikawa, Kiyohiko; Kurosawa, Kou; Amari, Kouichi; Ishimura, Sou; Katto, Masahito; Yokotani, Atsushi

    2007-06-01

    In this paper, we report the deposition of silicon nitride (SiNx) films for the production of semiconductor devices and flat panel displays, by chemical vapor deposition with vacuum ultraviolet excimer lamps (VUV-CVD) using SiH4 and NH3 as raw materials. An Ar2* excimer lamp (λ=126 nm, hν=9.8 eV) with a high photon energy was used to directly excite and dissociate SiH4 through a photochemical reaction. SiNx films were successfully formed at a low temperature of 100 °C with the Ar2* excimer lamp. Although the Si-rich films were obtained using an Ar2* lamp, they showed a quality almost similar to that of films obtained by conventional plasma-CVD at 400 °C.

  11. Design and Development of an Acoustic Levitation System for Use in CVD Growth of Carbon Nanotubes

    Science.gov (United States)

    Qasem, Amal ali

    The most widely used methods for growth of carbon nanotubes (CNTs) arc discharge, laser ablation, and chemical vapor deposition (CVD). Some of these methods have difficulties, such as controlling the quality and straightness of the nanotube in the synthesis of CNTs from substrates. Also, the enhanced plasma chemical vapor deposition method with the catalyst on a substrate produces straighter, larger diameter nanotubes by the tip growth method, but they are short. The difficulty in the floating catalyst method is that the nanotubes stay in the growth furnace for short times limiting growth to about one mm length; this method also leaves many catalyst impurities. One factor that limits CNT growth in these methods is the difficulty of getting enough carbon atoms to the growth catalyst to grow long nanotubes. The motivation of this work is that longer, higher quality nanotubes could be grown by increasing growth time and by increasing carbon atom movement to catalyst. The goal of this project is to use acoustic levitation to assist chemical vapor deposition growth by trapping and vibrating the growing CNTs for better properties. Our levitation system consists of a piezoelectric transducer attached to an aluminum horn and quartz rod extending into the growth furnace. The most important elements of our methods to achieve the acoustic levitation are as follows. 1. Using COMSOL Multi-physic Simulation software to determine the length of quartz rod needed to excite standing waves for levitation in the tube furnace. 2. Determining the resonance frequency of different transducers and horns. 3. Using ultrasound measurement to determine the time of flight, velocity of sound and sound wavelength of different horns. 4. Making Aluminum horns with the appropriate lengths. 5. Using ultrasound measurement to determine the changing of quartz rod velocity of sound and length in the furnace. 6. Mounting the transducer to booster horn and aluminum cylindrical horn above a reflector to

  12. Preparación de tamices moleculares de carbono por CVD

    Directory of Open Access Journals (Sweden)

    Manso, R.

    2001-02-01

    Full Text Available Carbon molecular sieves (CMS have been prepared by chemical vapour deposition (CVD of carbon from the pyrolysis of benzene molecules on activated carbon surfaces. The pyrolysis of benzene at temperatures in the range 650-850 ºC restricts the accessibility of the micropores due to the creation of constrictions on the microporous network. Temperatures higher than 850 ºC (temperature of carbonisation add difficulties due to decomposition and sinterization processes. Low flows of nitrogen (30 mL min-1 and high benzene content (13 % produce a more uniform carbon deposition and wider micropore size distributions. The CVD process on carbons activated to different burn-offs, using temperatures below 850 ºC, flows of 150 mL min-1 and benzene content of 1 %, gives rise to microporous materials which exhibit micropore volumes around 0,25 cm3 g-1 and narrow micropore size distributions: below 0,33 nm, between 0,33-0,41 nm or between 0,41-0,54 nm. The burn-off of the activated carbon has a relative little influence on the textural properties of the CMS that mainly depend on the degree of filling originated by the carbon deposition.

    Se han preparado tamices moleculares de carbono (CMS mediante el depósito de átomos de carbono, por pirólisis de benceno, sobre la superficie de carbones activados. La pirólisis de benceno a temperaturas comprendidas entre 650-850 ºC genera el cierre progresivo de los microporos debido a la creación de constricciones en la red microporosa que limitan la accesibilidad de determinadas moléculas. El uso de temperaturas superiores a la temperatura de carbonización del precursor (850 ºC introduce complicaciones debido a la descomposición y sinterización parcial del sólido. Flujos bajos de nitrógeno (30 mL min-1 con alto contenido en benceno (13 % producen un depósito homogéneo a lo largo de las paredes y los materiales presentan distribuciones microporosas mas anchas. El depósito de carbono sobre carbones

  13. Inorganic membrane reactor technology CRADA {number_sign}1176; Final report and assessment of membrane technology

    Energy Technology Data Exchange (ETDEWEB)

    Schwartz, R.W.; Collins, J.P.; Ng, M.F. [and others

    1997-04-01

    This project focused on the fabrication and evaluation of supported inorganic membranes for hydrogen and oxygen separation in petrochemical processes. A variety of fabrication techniques, including CVD (Chemical Vapor Deposition), electroless plating, solution deposition and conventional ceramic processing methods were used for membrane fabrication. For the oxygen separation membrane materials studied, the high surface roughness of the commercially available (and chemically compatible) MgO supports for high flux oxygen materials (SrCo{sub 0.5}FeO{sub x} and SrCo{sub 0.8}Fe{sub 0.2}O{sub x}) hindered the development of supported membranes of these materials. More encouraging results were obtained for the supported hydrogen separation membranes. Both dense palladium (prepared by CVD and electroless plating) and ultramicroporous silica (prepared by solution deposition) membranes were fabricated onto porous alumina supports. Gas separation characteristics and reactor performance of the membranes were both studied. Of the two classes of membranes, when incorporated into a membrane reactor the silica membranes demonstrated the best performance. Propane and isobutane dehydrogenation processes were studied and the silica membrane reactors displayed modest improvements in performance compared to the conventional reactors. In propane dehydrogenation, an increase in propylene yield of 34% was obtained with the membrane reactor (compared to the conventional reactor); in isobutane dehydrogenation, an increase in isobutylene yield of 40% at 525 C was obtained. However, these performance gains decreased somewhat with time on stream, due to membrane instability. Further improvements in membrane stability and permselectivity, as well as catalyst stability are needed before membrane reactors can be considered as a realistic alternative to the existing conventional technology.

  14. Chemical Vapor Deposited Zinc Sulfide. SPIE Press Monograph

    Energy Technology Data Exchange (ETDEWEB)

    McCloy, John S.; Tustison, Randal W.

    2013-04-22

    Zinc sulfide has shown unequaled utility for infrared windows that require a combination of long-wavelength infrared transparency, mechanical durability, and elevated-temperature performance. This book reviews the physical properties of chemical vapor deposited ZnS and their relationship to the CVD process that produced them. An in-depth look at the material microstructure is included, along with a discussion of the material's optical properties. Finally, because the CVD process itself is central to the development of this material, a brief history is presented.

  15. Electrical conduction in polycrystalline CVD diamond: Temperature dependent impedance measurements

    Energy Technology Data Exchange (ETDEWEB)

    Ye, H.; Williams, O.A.; Jackman, R.B. [Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE (United Kingdom); Rudkin, R.; Atkinson, A. [Department of Materials, Imperial College London, South Kensington, London SW7 2AZ (United Kingdom)

    2002-10-16

    In this paper, we report the first measurement of impedance on freestanding diamond films from 0.1 Hz to 10 MHz up to 300 C. A wide range of CVD materials have been investigated, but here we concentrate on 'black' diamond grown by MWPECVD. The Cole-Cole (Z' via Z{sup ''}) plots are well fitted to a RC parallel circuit model and the equivalent resistance and capacitance for the diamond films have been estimated using the Zview curve fitting. The results show only one single semicircle response at each temperature measured. It was found that the resistance decreases from 62 M{omega} at room temperature to 4 k{omega} at 300 C, with an activation energy around 0.51 eV. The equivalent capacitance is maintained at the level of 10{sup 2} pF up to 300 C, suggesting that the diamond grain boundaries are dominating the conduction. At 400 C, the impedance at low frequencies shows a linear tail, which can be explained that the ac polarization of diamond/Au interface occurs. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  16. Purification of carbon nanotubes grown by thermal CVD

    Science.gov (United States)

    Porro, S.; Musso, S.; Vinante, M.; Vanzetti, L.; Anderle, M.; Trotta, F.; Tagliaferro, A.

    2007-03-01

    We show the results of a set of purifications on carbon nanotubes (CNT) by acid and basic treatments. CNTs were obtained by thermal decomposition of camphor at 850 °C in a CVD growth system, by means of a growth process catalyzed by iron clusters originating from the addition of ferrocene in the precursors mixture. The purification procedures involved HNO 3, H 2SO 4, HSO 3Cl and NaOH for different process temperatures. As-grown CNTs showed a consistent presence of metal catalyst (about 6 wt%), evidenced by TGA. The purification treatments led to a certain amount of opening of the CNT tips, with a consequent loss of metal catalyst encapsulated in tips. This is also confirmed by BET analysis, which showed an increase of the surface area density of CNT after the purification. FT-IR and XPS revealed the presence of carboxylic groups on the CNT surface chemically modified by the harsh environment of the purification process. Among the various treatments that have been tested, the 1:3 solution of nitric and sulphuric acid was the most effective in modifying the CNT surface and inducing the formation of functional groups.

  17. Experimental studies of N~+ implantation into CVD diamond thin films

    Institute of Scientific and Technical Information of China (English)

    辛火平; 林成鲁; 王建新; 邹世昌; 石晓红; 林梓鑫; 周祖尧; 刘祖刚

    1997-01-01

    The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backseattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV-PL), Fourier transformation infrared absorption spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N+ implantation doping without any graphitization has been successfully realized when 100 keV N+ ions at a dosage of 2 × 1016 cm-2 were implanted into diamond films at 550℃ . UV-PL spectra indicate that the implanted N+ ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N+ implantation changed little. Carbon nitride containing C≡N covalent bond has been successfully synthesized by 100 keV, 1.2×1018 N/cm2 N+ implantation into diamond films. Most of the implanted N+ ions formed C≡N covalent bonds with C atoms. The others were free state nitroge

  18. Absolute x-ray and neutron calibration of CVD-diamond-based time-of-flight detectors for the National Ignition Facility

    Science.gov (United States)

    Rosenthal, A.; Kabadi, N. V.; Sio, H.; Rinderknecht, H.; Gatu Johnson, M.; Frenje, J. A.; Seguin, F. H.; Petrasso, R. D.; Glebov, V.; Forrest, C.; Knauer, J.

    2016-10-01

    The particle-time-of-flight (pTOF) detector at the National Ignition Facility routinely measures proton and neutron nuclear bang-times in inertial confinement fusion (ICF) implosions. The active detector medium in pTOF is a chemical vapor deposition (CVD) diamond biased to 250 - 1500 V. This work discusses an absolute measurement of CVD diamond sensitivity to continuous neutrons and x-rays. Although the impulse response of the detector is regularly measured on a diagnostic timing shot, absolute sensitivity of the detector's response to neutrons and x-rays has not been fully established. X-ray, DD-n, and DT-n sources at the MIT HEDP Accelerator Facility provide continuous sources for testing. CVD diamond detectors are also fielded on OMEGA experiments to measure sensitivity to impulse DT-n. Implications for absolute neutron yield measurements at the NIF using pTOF detectors will be discussed. This work was supported in part by the U.S. DoE and LLNL.

  19. Effects of Platinum Additions and Sulfur Impurities on the Microstructure and Scale Adhesion Behavior of Single-Phase CVD Aluminide Bond Coatings

    Energy Technology Data Exchange (ETDEWEB)

    Cooley, K.M.; Haynes, J.A.; Lee, W.Y.; Pint, B.A.; Wright, I.G.; Zhang, Y.

    1999-02-28

    The adhesion of alumina scales to aluminide bond coats is a life-limiting factor for some advanced thermal barrier coating systems. This study investigated the effects of aluminide bond coat sulfur and platinum contents on alumina scale adhesion and coating microstructural evolution during isothermal and cyclic oxidation testing at 1150 C. Low-sulfur NiAl and NiPtAl bond coats were fabricated by chemical vapor deposition (CVD). Lowering the sulfur contents of CVD NiAl bond coatings significantly improved scale adhesion, but localized scale spallation eventually initiated along coating grain boundaries. Further improvements in scale adhesion were obtained with Pt additions. The observed influences of Pt additions included: (1) mitigation of the detrimental effects of high sulfur levels, (2) drastic reductions in void growth along the scale-metal interface, (3) alteration of the oxide-metal interface morphology, and (4) elimination of Ta-rich oxides in the Al{sub 2}O{sub 3} scales during thermal cycling. The results of this study also suggested that the microstructure (especially the grain size) of CVD aluminide bond coatings plays a significant role in scale adhesion.

  20. Influences of gas adsorption and Au nanoparticles on the electrical properties of CVD-grown MoS2 thin films(Conference Presentation)

    Science.gov (United States)

    Cho, Yunae; Sohn, Ahrum; Kim, Sujung; Kim, Dong-Wook; Cho, Byungjin; Hahm, Myung Gwan; Kim, Dong-Ho

    2016-10-01

    Recently, extraordinary physical properties of two-dimensional transition metal dichalcogenides (TMDs) have attracted great attention for various device applications, including photodetectors, field effect transistors, and chemical sensors. There have been intensive research efforts to grow high-quality and large area TMD thin films, and chemical vapor deposition (CVD) techniques enable scalable growth of layered MoS2 films. We investigated the roles of Au nanoparticles (NPs) on the transport and photoresponse of the CVD-grown MoS2 thin films. The Au NPs increased conductivity and enabled fast photoresponse of MoS2 thin films. These results showed that decoration of metal NPs were useful means to tailor the physical properties of CVD-grown MoS2 thin films. To clarify the roles of the metal particles, we compared the transport characteristics of MoS2 thin films with and without the Au NPs in different gas ambient conditions (N2, O2, and H2/N2). The ambient-dependence of the MoS2 thin films allowed us to discuss possible scenarios to explain our results based on considerations of band bending near the Au NPs, gas adsorption/desorption and subsequent charge transfer, and charge scattering/trapping by defect states.