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Sample records for deposition cvd techniques

  1. An economic CVD technique for pure SnO2 thin films deposition ...

    Indian Academy of Sciences (India)

    An economic CVD technique for pure SnO2 thin films deposition: Temperature effects ..... C are depicted in figure 7. It is observed that the cut-off wave- ... cating that the energy gap of the SnO2 films varies among. 3·54, 3·35 and 1·8 eV.

  2. Coating of ceramic powders by chemical vapor deposition techniques (CVD)

    International Nuclear Information System (INIS)

    Haubner, R.; Lux, B.

    1997-01-01

    New ceramic materials with selected advanced properties can be designed by coating of ceramic powders prior to sintering. By variation of the core and coating material a large number of various powders and ceramic materials can be produced. Powders which react with the binder phase during sintering can be coated with stable materials. Thermal expansion of the ceramic materials can be adjusted by varying the coating thickness (ratio core/layer). Electrical and wear resistant properties can be optimized for electrical contacts. A fluidized bed reactor will be designed which allow the deposition of various coatings on ceramic powders. (author)

  3. High quality aluminide and thermal barrier coatings deposition for new and service exposed parts by CVD techniques

    Energy Technology Data Exchange (ETDEWEB)

    Pedraza, F.; Tuohy, C.; Whelan, L.; Kennedy, A.D. [SIFCO Turbine Components, Carrigtwohill, Cork (Ireland)

    2004-07-01

    In this work, the performance of CVD aluminide coatings is compared to that of coatings deposited by the classical pack cementation technique using standard SIFCO procedures. The CVD coatings always seem to behave better upon exposure to isothermal and cyclic oxidation conditions. This is explained by a longer term stability of CVD coatings, with higher Al amounts in the diffusion zone and less refractory element precipitation in the additive layer. The qualities of Pt/Al coatings by out-of-pack and CVD are also compared as a previous step for further thermal barrier coating deposition. As an example, YSZ thermal barrier coatings are deposited by MO-CVD on Pt/Al CVD bond coats rendering adherent and thick coatings around the surface of turbine blades. This process under development does not require complex manipulation of the component to be coated. (orig.)

  4. Thermoluminescence properties of undoped diamond films deposited using HF CVD technique

    Directory of Open Access Journals (Sweden)

    Paprocki K.

    2018-03-01

    Full Text Available Natural diamond has been considered as a perspective material for clinical radiation dosimetry due to its tissuebiocompatibility and chemical inertness. However, the use of natural diamond in radiation dosimetry has been halted by the high market price. The recent progress in the development of CVD techniques for diamond synthesis, offering the capability of growing high quality diamond layers, has renewed the interest in using this material in radiation dosimeters having small geometricalsizes. Polycrystalline CVD diamond films have been proposed as detectors and dosimeters of β and α radiation with prospective applications in high-energy photon dosimetry. In this work, we present a study on the TL properties of undoped diamond film samples grown by the hot filament CVD (HF CVD method and exposed to β and α radiation. The glow curves for both types of radiation show similar character and can be decomposed into three components. The dominant TL peaks are centered at around 610 K and exhibit activation energy of the order of 0.90 eV.

  5. An economic CVD technique for pure SnO 2 thin films deposition

    Indian Academy of Sciences (India)

    A modified new method of CVD for formation of pure layers of tin oxide films was developed. This method is very simple and inexpensive and produces films with good electrical properties. The effect of substrate temperature on the sheet resistance, resistivity, mobility, carrier concentration and transparency of the films has ...

  6. Experiment and equipment of depositing diamond films with CVD system

    International Nuclear Information System (INIS)

    Xie Erqing; Song Chang'an

    2002-01-01

    CVD (chemical vapor deposition) emerged in recent years is a new technique for thin film deposition, which play a key role in development of modern physics. It is important to predominate the principle and technology of CVD for studying modern physics. In this paper, a suit of CVD experimental equipment for teaching in college physics is presented, which has simple design and low cost. The good result was gained in past teaching practices

  7. Surface coatings deposited by CVD and PVD

    International Nuclear Information System (INIS)

    Gabriel, H.M.

    1982-01-01

    The demand for wear and corrosion protective coatings is increasing due to economic facts. Deposition processes in gas atmospheres like the CVD and PVD processes attained a tremendous importance especially in the field of the deposition of thin hard refractory and ceramic coatings. CVD and PVD processes are reviewed in detail. Some examples of coating installations are shown and numerous applications are given to demonstrate the present state of the art. (orig.) [de

  8. Low temperature CVD deposition of silicon carbide

    International Nuclear Information System (INIS)

    Dariel, M.; Yeheskel, J.; Agam, S.; Edelstein, D.; Lebovits, O.; Ron, Y.

    1991-04-01

    The coating of graphite on silicon carbide from the gaseous phase in a hot-well, open flow reactor at 1150degC is described. This study constitutes the first part of an investigation of the process for the coating of nuclear fuel by chemical vapor deposition (CVD)

  9. Advancements in artificial heart valve disks using nano-sized thin films deposited by CVD and sol-gel techniques

    International Nuclear Information System (INIS)

    Kousar, Y.; Ali, N.; Neto, V.F.; Mei, S.; Gracio, J.

    2003-01-01

    Pyrolytic carbon (PyC) is widely used in manufacturing commercial artificial heart valve disks (HVD). Although, PyC is commonly used in HVD, it is not the best material for this application since its blood compatibility is not ideal for prolonged clinical use. As a result thrombosis often occurs and the patients are required to take anti- coagulation drugs on a regular basis in order to minimise the formation of thrombosis. However, the anti-coagulation therapy gives rise to some detrimental side effects in patients. Therefore, it is extremely urgent that newer and more technically advanced materials with better surface and bulk properties are developed. In this paper, we report the mechanical properties of PyC-HVD, namely, strength, wear resistance and coefficient of friction. The strength of the material was assessed using Brinell indentation tests. Furthermore, wear resistance and the coefficient of friction values were obtained from the pin-on-disk testing. The micro-structural properties of PyC were characterized using XRD, Raman spectroscopy and SEM analysis. Also, in this paper we report the preparation of free standing nanocrystalline diamond films (FSND) using the time-modulated chemical vapor deposition (TMCVD) process. Furthermore, the sol-gel technique was used to uniformly coat PyC-HVD with dense, nanocrystalline-titanium oxide (nc-TiO/sub 2/) coatings. The as-grown nc-TiO/sub 2/ coatings were characterized for microstructure using SEM and XRD analysis. (author)

  10. CVD diamond deposition onto dental burs

    International Nuclear Information System (INIS)

    Ali, N.; Sein, H.

    2001-01-01

    A hot-filament chemical vapor deposition (HFCVD) system has been modified to enable non-planar substrates, such as metallic wires and dental burs, to be uniformly coated with thin polycrystalline diamond films. Initially, diamond deposition was carried out on titanium and tantalum wires in order to test and optimize the system. High growth rates of the order of approx. 8 /hr were obtained when depositing diamond on titanium wires using the vertical filament arrangement. However, lower growth rates of the order of 4-5meu m/hr were obtained with diamond deposition on tantalum wires. To extend the work towards a practical biomedical application tungsten carbide dental burs were coated with diamond films. The as-grown films were found to be polycrystalline and uniform over the cutting tip. Finally, the costs relating to diamond CVD onto dental burs have been presented in this paper. The costs relating to coating different number of burs at a time and the effect of film thickness on costs have been included in this investigation. (author)

  11. Chemical vapor deposition (CVD) of uranium for alpha spectrometry

    International Nuclear Information System (INIS)

    Ramirez V, M. L.; Rios M, C.; Ramirez O, J.; Davila R, J. I.; Mireles G, F.

    2015-09-01

    The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

  12. Selective tungsten deposition in a batch cold wall CVD system

    International Nuclear Information System (INIS)

    Chow, R.; Kang, S.; Harshbarger, W.R.; Susoeff, M.

    1987-01-01

    Selective deposition of tungsten offers many advantages for VLSI technology. The process can be used as a planarization technique for multilevel interconnect technology, it can be used to fill contacts and to provide a barrier layer between Al and Si materials, and the selective W process might be used as a self-aligned technology to provide low resistance layers on source/drain and gate conductors. Recent publications have indicate that cold wall CVD systems provide advantages for development of selective W process. Genus has investigated selective W deposition processing, and we have developed a selective W deposition process for the Genus 8402 multifilm deposition system. This paper describes the Genus 8402 system and the selective W process developed in this reactor. To further develop selective W technology, Genus has signed an agreement with General Electric establishing a joint development program. As a part of this program, the authors characterized the selective W process for encroachment, Si consumption and degrees of selectivity on various dielectrics. The status of this development activity and process characterization is reviewed in this paper

  13. Chemical vapor deposition (CVD) of uranium for alpha spectrometry; Deposicion quimica de vapor (CVD) de uranio para espectrometria alfa

    Energy Technology Data Exchange (ETDEWEB)

    Ramirez V, M. L.; Rios M, C.; Ramirez O, J.; Davila R, J. I.; Mireles G, F., E-mail: luisalawliet@gmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

    2015-09-15

    The uranium determination through radiometric techniques as alpha spectrometry requires for its proper analysis, preparation methods of the source to analyze and procedures for the deposit of this on a surface or substrate. Given the characteristics of alpha particles (small penetration distance and great loss of energy during their journey or its interaction with the matter), is important to ensure that the prepared sources are thin, to avoid problems of self-absorption. The routine methods used for this are the cathodic electro deposition and the direct evaporation, among others. In this paper the use of technique of chemical vapor deposition (CVD) for the preparation of uranium sources is investigated; because by this, is possible to obtain thin films (much thinner than those resulting from electro deposition or evaporation) on a substrate and comprises reacting a precursor with a gas, which in turn serves as a carrier of the reaction products to achieve deposition. Preliminary results of the chemical vapor deposition of uranium are presented, synthesizing and using as precursor molecule the uranyl acetylacetonate, using oxygen as carrier gas for the deposition reaction on a glass substrate. The uranium films obtained were found suitable for alpha spectrometry. The variables taken into account were the precursor sublimation temperatures and deposition temperature, the reaction time and the type and flow of carrier gas. Of the investigated conditions, two depositions with encouraging results that can serve as reference for further work to improve the technique presented here were selected. Alpha spectra obtained for these depositions and the characterization of the representative samples by scanning electron microscopy and X-ray diffraction are also presented. (Author)

  14. CVD techniques applied to energy problems

    International Nuclear Information System (INIS)

    McCreary, W.J.; Carroll, D.W.

    1981-01-01

    Some of the applications of chemical vapor deposition in energy related programs will be discussed, and coating parameters will be described. The coatings to be discussed were made at reduced pressures from the hydrogen reduction of metal fluorides, or metal silane and from the pyrolysis of metal carbonyls

  15. Diamond like carbon coatings deposited by microwave plasma CVD ...

    Indian Academy of Sciences (India)

    WINTEC

    photoelectron spectroscopy (XPS) and spectroscopic ellipsometry techniques for estimating sp. 3. /sp. 2 ratio. ... ion beam deposition (Savvidas 1986), pulsed laser deposi- ... carrier gas (10 sccm) by passing 150 watts of microwave power.

  16. Chemical Vapor-Deposited (CVD) Diamond Films for Electronic Applications

    Science.gov (United States)

    1995-01-01

    Diamond films have a variety of useful applications as electron emitters in devices such as magnetrons, electron multipliers, displays, and sensors. Secondary electron emission is the effect in which electrons are emitted from the near surface of a material because of energetic incident electrons. The total secondary yield coefficient, which is the ratio of the number of secondary electrons to the number of incident electrons, generally ranges from 2 to 4 for most materials used in such applications. It was discovered recently at the NASA Lewis Research Center that chemical vapor-deposited (CVD) diamond films have very high secondary electron yields, particularly when they are coated with thin layers of CsI. For CsI-coated diamond films, the total secondary yield coefficient can exceed 60. In addition, diamond films exhibit field emission at fields orders of magnitude lower than for existing state-of-the-art emitters. Present state-of-the-art microfabricated field emitters generally require applied fields above 5x10^7 V/cm. Research on field emission from CVD diamond and high-pressure, high-temperature diamond has shown that field emission can be obtained at fields as low as 2x10^4 V/cm. It has also been shown that thin layers of metals, such as gold, and of alkali halides, such as CsI, can significantly increase field emission and stability. Emitters with nanometer-scale lithography will be able to obtain high-current densities with voltages on the order of only 10 to 15 V.

  17. Comparative study of dlc coatings by pvd against cvd technique on textile dents

    International Nuclear Information System (INIS)

    Malik, M.; Alam, S.; Iftikhar, F.

    2007-01-01

    Diamond like Carbon (DLC) film is a hard amorphous carbon hydride film formed by Physical or Chemical vapor deposition (PVD or CVD) techniques. Due to its unique properties especially high hardness, lower coefficient of friction and lubricious nature, these coatings are not only used to extend the life of cutting tools but also for non cutting applications such as for forming dies, molds and on many functional parts of textile. In the present work two techniques were employed i.e. PVD and CVD for deposition of diamond like carbon film on textile dents. These dents are used as thread guider in high speed weaving machine. The measurement of coating thickness, adhesion, hardness and roughness values indicates that overall properties of DLC coating developed by PVD LARC technology reduces abrasion and increases the workability and durability of textile dents as well as suppress the need of lubricants. (author)

  18. A study of the performance and properties of diamond like carbon (DLC) coatings deposited by plasma chemical vapor deposition (CVD) for two stroke engine components

    Energy Technology Data Exchange (ETDEWEB)

    Tither, D. [BEP Grinding Ltd., Manchester (United Kingdom); Ahmed, W.; Sarwar, M.; Penlington, R. [Univ. of Northumbria, Newcastle-upon-Tyne (United Kingdom)

    1995-12-31

    Chemical vapor deposition (CVD) using microwave and RF plasma is arguably the most successful technique for depositing diamond and diamond like carbon (DLC) films for various engineering applications. However, the difficulties of depositing diamond are nearly as extreme as it`s unique combination of physical, chemical and electrical properties. In this paper, the modified low temperature plasma enhanced CVD system is described. The main focus of this paper will be work related to deposition of DLC on metal matrix composite materials (MMCs) for application in two-stroke engine components and results will be presented from SEM, mechanical testing and composition analysis studies. The authors have demonstrated the feasibility of depositing DLC on MMCs for the first time using a vacuum deposition process.

  19. Deposition and micro electrical discharge machining of CVD-diamond layers incorporated with silicon

    Science.gov (United States)

    Kühn, R.; Berger, T.; Prieske, M.; Börner, R.; Hackert-Oschätzchen, M.; Zeidler, H.; Schubert, A.

    2017-10-01

    In metal forming, lubricants have to be used to prevent corrosion or to reduce friction and tool wear. From an economical and ecological point of view, the aim is to avoid the usage of lubricants. For dry deep drawing of aluminum sheets it is intended to apply locally micro-structured wear-resistant carbon based coatings onto steel tools. One type of these coatings are diamond layers prepared by chemical vapor deposition (CVD). Due to the high strength of diamond, milling processes are unsuitable for micro-structuring of these layers. In contrast to this, micro electrical discharge machining (micro EDM) is a suitable process for micro-structuring CVD-diamond layers. Due to its non-contact nature and its process principle of ablating material by melting and evaporating, it is independent of the hardness, brittleness or toughness of the workpiece material. In this study the deposition and micro electrical discharge machining of silicon incorporated CVD-diamond (Si-CVD-diamond) layers were presented. For this, 10 µm thick layers were deposited on molybdenum plates by a laser-induced plasma CVD process (LaPlas-CVD). For the characterization of the coatings RAMAN- and EDX-analyses were conducted. Experiments in EDM were carried out with a tungsten carbide tool electrode with a diameter of 90 µm to investigate the micro-structuring of Si-CVD-diamond. The impact of voltage, discharge energy and tool polarity on process speed and resulting erosion geometry were analyzed. The results show that micro EDM is a suitable technology for micro-structuring of silicon incorporated CVD-diamond layers.

  20. Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application

    Directory of Open Access Journals (Sweden)

    C. C. Huang

    2012-01-01

    Full Text Available Germanium antimony (Ge-Sb thin films with tuneable compositions have been fabricated on SiO2/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD. Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875°C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM with energy dispersive X-ray analysis (EDX and X-ray diffraction (XRD techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase-change switching demonstrated electrically, with a threshold voltage of 2.2–2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase-change memory and optical, electronic, and plasmonic switching.

  1. Advances in the chemical vapor deposition (CVD) of Tantalum

    DEFF Research Database (Denmark)

    Mugabi, James Atwoki; Eriksen, Søren; Christensen, Erik

    2014-01-01

    The chemical stability of tantalum in hot acidic media has made it a key material in the protection of industrial equipment from corrosion under such conditions. The Chemical Vapor Deposition of tantalum to achieve such thin corrosion resistant coatings is one of the most widely mentioned examples...

  2. Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films

    DEFF Research Database (Denmark)

    Leervad Pedersen, T.P.; Skov Jensen, J.; Chevallier, J.

    2005-01-01

    The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can...

  3. Merging Standard CVD Techniques for GaAs and Si Epitaxial Growth

    NARCIS (Netherlands)

    Sammak, A.; De Boer, W.; Van den Bogaard, A.; Nanver, L.K.

    2010-01-01

    A commercial Chemical Vapor Deposition (CVD) system, the ASMI Epsilon 2000 designed for Si and SiGe epitaxy, has, for the first time, been equipped for the growth of GaAs compounds in a manner that does not exclude the use of the system also for Si-based depositions. With the new system, intrinsic,

  4. Interlayers Applied to CVD Diamond Deposition on Steel Substrate: A Review

    Directory of Open Access Journals (Sweden)

    Djoille Denner Damm

    2017-09-01

    Full Text Available Academics and industry have sought after combining the exceptional properties of diamonds with the toughness of steel. Since the early 1990s several partial solutions have been found but chemical vapor deposition (CVD diamond deposition on steel substrate continues to be a persistent problem. The main drawbacks are the high carbon diffusion from gas phase into substrate, the transition metals on the material surface that catalyze sp2 bond formation, instead of sp3 bonds, and the high thermal expansion coefficient (TEC mismatch between diamond and steels. An intermediate layer has been found necessary to increase diamond adhesion. Literature has proposed many efficient intermediate layers as a diffusion barrier for both, carbon and iron, but most intermediate layers shown have not solved TEC mismatch. In this review, we briefly discuss the solutions that exclusively work as diffusion barrier and discuss in a broader way the ones that also solve, or may potentially solve, the TEC mismatch problem. We examine some multilayers, the iron borides, the chromium carbides, and vanadium carbides. We go through the most relevant results of the last two and a half decades, including recent advances in our group. Vanadium carbide looks promising since it has shown excellent diffusion barrier properties, its TEC is intermediary between diamond and steel and, it has been thickened to manage thermal stress relief. We also review a new deposition technique to set up intermediate layers: laser cladding. It is promising because of its versatility in mixing different materials and fusing and/or sintering them on a steel surface. We conclude by remarking on new perspectives.

  5. Chemical vapor deposition: A technique for applying protective coatings

    Energy Technology Data Exchange (ETDEWEB)

    Wallace, T.C. Sr.; Bowman, M.G.

    1979-01-01

    Chemical vapor deposition is discussed as a technique for applying coatings for materials protection in energy systems. The fundamentals of the process are emphasized in order to establish a basis for understanding the relative advantages and limitations of the technique. Several examples of the successful application of CVD coating are described. 31 refs., and 18 figs.

  6. One-dimensional surface-imprinted polymeric nanotubes for specific biorecognition by initiated chemical vapor deposition (iCVD).

    Science.gov (United States)

    Ince, Gozde Ozaydin; Armagan, Efe; Erdogan, Hakan; Buyukserin, Fatih; Uzun, Lokman; Demirel, Gokhan

    2013-07-24

    Molecular imprinting is a powerful, generic, and cost-effective technique; however, challenges still remain related to the fabrication and development of these systems involving nonhomogeneous binding sites, insufficient template removing, incompatibility with aqueous media, low rebinding capacity, and slow mass transfer. The vapor-phase deposition of polymers is a unique technique because of the conformal nature of coating and offers new possibilities in a number of applications including sensors, microfluidics, coating, and bioaffinity platforms. Herein, we demonstrated a simple but versatile concept to generate one-dimensional surface-imprinted polymeric nanotubes within anodic aluminum oxide (AAO) membranes based on initiated chemical vapor deposition (iCVD) technique for biorecognition of immunoglobulin G (IgG). It is reported that the fabricated surface-imprinted nanotubes showed high binding capacity and significant specific recognition ability toward target molecules compared with the nonimprinted forms. Given its simplicity and universality, the iCVD method can offer new possibilities in the field of molecular imprinting.

  7. Effect of pretreatment and deposition parameters on diamond nucleation in CVD

    International Nuclear Information System (INIS)

    Nazim, E.; Izman, S.; Ourdjini, A.; Shaharoun, A.M.

    2007-01-01

    Chemical vapour deposition (CVD) of diamond films on cemented carbide (WC) has aroused great interest in recent years. The combination of toughness from the WC and the high hardness of diamond results in outstanding wear resistance. This will increase the lifetime and better technical performance of the components made of diamond coated carbide. One of the important steps in the growth of diamond film is the nucleation of diamond as its density strongly influences the diamond growth process, film quality and morphology. In this paper the various effects of surface pretreatment and diamond deposition conditions on the diamond nucleation density are reviewed. (author)

  8. A novel Mo-W interlayer approach for CVD diamond deposition on steel

    Energy Technology Data Exchange (ETDEWEB)

    Kundrát, Vojtěch; Sullivan, John; Ye, Haitao, E-mail: h.ye@aston.ac.uk [School of Engineering and Applied Science, Aston University, Birmingham, B4 7ET (United Kingdom); Zhang, Xiaoling; Cooke, Kevin; Sun, Hailin [Miba Coating Group: Teer Coatings Ltd, West-Stone-House, West-Stone, Berry-Hill-Industrial-Estate, WR9 9AS, Droitwich (United Kingdom)

    2015-04-15

    Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD) processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42) substrates using a multi-structured molybdenum (Mo) – tungsten (W) interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

  9. A novel Mo-W interlayer approach for CVD diamond deposition on steel

    Science.gov (United States)

    Kundrát, Vojtěch; Zhang, Xiaoling; Cooke, Kevin; Sun, Hailin; Sullivan, John; Ye, Haitao

    2015-04-01

    Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD) processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42) substrates using a multi-structured molybdenum (Mo) - tungsten (W) interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

  10. A novel Mo-W interlayer approach for CVD diamond deposition on steel

    Directory of Open Access Journals (Sweden)

    Vojtěch Kundrát

    2015-04-01

    Full Text Available Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42 substrates using a multi-structured molybdenum (Mo – tungsten (W interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

  11. Effect of substrate bias on deposition behaviour of charged silicon nanoparticles in ICP-CVD process

    International Nuclear Information System (INIS)

    Yoo, Seung-Wan; Kim, Jung-Hyung; Seong, Dae-Jin; You, Shin-Jae; Seo, Byong-Hoon; Hwang, Nong-Moon

    2017-01-01

    The effect of a substrate bias on the deposition behaviour of crystalline silicon films during inductively coupled plasma chemical vapour deposition (ICP-CVD) was analysed by consideration of non-classical crystallization, in which the building block is a nanoparticle rather than an individual atom or molecule. The coexistence of positively and negatively charged nanoparticles in the plasma and their role in Si film deposition are confirmed by applying bias voltages to the substrate, which is sufficiently small as not to affect the plasma potential. The sizes of positively and negatively charged nanoparticles captured on a carbon membrane and imaged using TEM are, respectively, 2.7–5.5 nm and 6–13 nm. The film deposited by positively charged nanoparticles has a typical columnar structure. In contrast, the film deposited by negatively charged nanoparticles has a structure like a powdery compact with the deposition rate about three times higher than that for positively charged nanoparticles. All the films exhibit crystallinity even though the substrate is at room temperature, which is attributed to the deposition of crystalline nanoparticles formed in the plasma. The film deposited by negatively charged nanoparticles has the highest crystalline fraction of 0.84. (paper)

  12. Convection and chemistry effects in CVD: A 3-D analysis for silicon deposition

    Science.gov (United States)

    Gokoglu, S. A.; Kuczmarski, M. A.; Tsui, P.; Chait, A.

    1989-01-01

    The computational fluid dynamics code FLUENT has been adopted to simulate the entire rectangular-channel-like (3-D) geometry of an experimental CVD reactor designed for Si deposition. The code incorporated the effects of both homogeneous (gas phase) and heterogeneous (surface) chemistry with finite reaction rates of important species existing in silane dissociation. The experiments were designed to elucidate the effects of gravitationally-induced buoyancy-driven convection flows on the quality of the grown Si films. This goal is accomplished by contrasting the results obtained from a carrier gas mixture of H2/Ar with the ones obtained from the same molar mixture ratio of H2/He, without any accompanying change in the chemistry. Computationally, these cases are simulated in the terrestrial gravitational field and in the absence of gravity. The numerical results compare favorably with experiments. Powerful computational tools provide invaluable insights into the complex physicochemical phenomena taking place in CVD reactors. Such information is essential for the improved design and optimization of future CVD reactors.

  13. Electrically insulating films deposited on V-4%Cr-4%Ti by reactive CVD

    International Nuclear Information System (INIS)

    Park, J.H.

    1998-04-01

    In the design of liquid-metal blankets for magnetic fusion reactors, corrosion resistance of structural materials and the magnetohydrodynamic forces and their influence on thermal hydraulics and corrosion are major concerns. Electrically insulating CaO films deposited on V-4%Cr-4%Ti exhibit high-ohmic insulator behavior even though a small amount of vanadium from the alloy become incorporated into the film. However, when vanadium concentration in the film is > 15 wt.%, the film becomes conductive. When the vanadium concentration is high in localized areas, a calcium vanadate phase that exhibits semiconductor behavior can form. The objective of this study is to evaluate electrically insulating films that were deposited on V-4%Cr-4%Ti by a reactive chemical vapor deposition (CVD) method. To this end, CaO and Ca-V-O coatings were produced on vanadium alloys by CVD and by a metallic-vapor process to investigate the electrical resistance of the coatings. The authors found that the Ca-V-O films exhibited insulator behavior when the ratio of calcium concentration to vanadium concentration R in the film > 0.9, and semiconductor or conductor behavior when R 0.98 were exposed in liquid lithium. Based on these studies, they conclude that semiconductor behavior occurs if a conductive calcium vanadate phase is present in localized regions in the CaO coating

  14. A Review of Carbon Nanomaterials’ Synthesis via the Chemical Vapor Deposition (CVD Method

    Directory of Open Access Journals (Sweden)

    Yehia M. Manawi

    2018-05-01

    Full Text Available Carbon nanomaterials have been extensively used in many applications owing to their unique thermal, electrical and mechanical properties. One of the prime challenges is the production of these nanomaterials on a large scale. This review paper summarizes the synthesis of various carbon nanomaterials via the chemical vapor deposition (CVD method. These carbon nanomaterials include fullerenes, carbon nanotubes (CNTs, carbon nanofibers (CNFs, graphene, carbide-derived carbon (CDC, carbon nano-onion (CNO and MXenes. Furthermore, current challenges in the synthesis and application of these nanomaterials are highlighted with suggested areas for future research.

  15. A Review of Carbon Nanomaterials’ Synthesis via the Chemical Vapor Deposition (CVD) Method

    Science.gov (United States)

    Manawi, Yehia M.; Samara, Ayman; Al-Ansari, Tareq; Atieh, Muataz A.

    2018-01-01

    Carbon nanomaterials have been extensively used in many applications owing to their unique thermal, electrical and mechanical properties. One of the prime challenges is the production of these nanomaterials on a large scale. This review paper summarizes the synthesis of various carbon nanomaterials via the chemical vapor deposition (CVD) method. These carbon nanomaterials include fullerenes, carbon nanotubes (CNTs), carbon nanofibers (CNFs), graphene, carbide-derived carbon (CDC), carbon nano-onion (CNO) and MXenes. Furthermore, current challenges in the synthesis and application of these nanomaterials are highlighted with suggested areas for future research. PMID:29772760

  16. Deposition uniformity, particle nucleation and the optimum conditions for CVD in multi-wafer furnaces

    Energy Technology Data Exchange (ETDEWEB)

    Griffiths, S.K.; Nilson, R.H.

    1996-06-01

    A second-order perturbation solution describing the radial transport of a reactive species and concurrent deposition on wafer surfaces is derived for use in optimizing CVD process conditions. The result is applicable to a variety of deposition reactions and accounts for both diffusive and advective transport, as well as both ordinary and Knudsen diffusion. Based on the first-order approximation, the deposition rate is maximized subject to a constraint on the radial uniformity of the deposition rate. For a fixed reactant mole fraction, the optimum pressure and optimum temperature are obtained using the method of Lagrange multipliers. This yields a weak one-sided maximum; deposition rates fall as pressures are reduced but remain nearly constant at all pressures above the optimum value. The deposition rate is also maximized subject to dual constraints on the uniformity and particle nucleation rate. In this case, the optimum pressure, optimum temperature and optimum reactant fraction are similarly obtained, and the resulting maximum deposition rate is well defined. These results are also applicable to CVI processes used in composites manufacturing.

  17. Low-pressure c-BN deposition - is a CVD process possible?

    International Nuclear Information System (INIS)

    Haubner, R.; Tang, X.

    2001-01-01

    Since the low-pressure diamond deposition was discovered in 1982 there is a high interest to find a similar process for the c-BN synthesis. A review about the c-BN deposition process as well as its characterization is given. Experiments with a simple chemical vapor deposition(CVD) reactor using tris(dimethylamino)borane as precursor were carried out. In a cold-wall reactor substrates were heated up by high-frequency. Argon was used as protecting and carrying the precursor, it was saturated with tris(dimethylamino)borane (precursor) according to its vapor pressure and transports the pressure to the hot substrate, where deposition occurs. WC-Co hardmetal plates containing 6 wt. % Co, Mo and Si were used as substrates. Various BN layers were deposited and characterized. X-ray diffraction, IR-spectroscopy and SIMS indicate that BN-coatings containing c-BN were deposited. However a final verification of c-BN crystallites by TEM investigations was not possible till now. (nevyjel)

  18. CVD diamond coatings on titanium : Characterisation by XRD techniques

    Energy Technology Data Exchange (ETDEWEB)

    Cappuccio, G [CNR, Frascati, Rome (Italy). Istituto di Strutturistica Chimica; [INFN-LNF, Frascati, Rome (Italy). Laboratorio Dafne Luce

    1996-09-01

    Here, the authors report an analysis carried out on diamond coatings on titanium substrates to show the potentially of x-ray diffraction techniques in the structural characterisation both of diamond thin films and of the other phases (TiC and TiH{sub 2}) present in the interfacial layer. It should be noted that the composition and microstructure of the interface layers strongly affect the characteristics of the diamond films, particularly adhesion, which is one of the most important elements determining the final quality of the coating.

  19. Aluminum-silicon co-deposition by FB-CVD on austenitic stainless steel AISI 316

    International Nuclear Information System (INIS)

    Marulanda, J L; Perez, F J; Remolina-Millán, A

    2013-01-01

    Aluminum-silicon coatings were deposited on stainless steel AISI 316 in the temperature range of 540 to 560°C by CVD-FBR. It was used a fluidized bed with 2.5% silicon and 7.5% aluminum powder and 90% inert (alumina). This bed was fluidized with Ar and as an activator a mixture of HCl/H2 in ratios of 1/10 to 1/16. Furthermore, the deposition time of the coatings was varied between 45 minutes to 1.5 hours, with a 50% active gas, neutral gases 50%. Thermodynamic simulation was conducted with the Thermocalc software to get the possible compositions and amount of material deposited for the chosen conditions. The coatings presented the follow compounds FeAl 2 Si, FeAl 2 and Fe 2 Al 5 . Aluminum-silicon coatings were heat treated to improve its mechanical properties and its behavior against oxidation for the inter diffusion of the alloying elements. The heat treatment causes the aluminum diffuse into the substrate and the iron diffuse into coating surface. This leads to the transformation of the above compounds in FeAl, Al 2 FeSi, Cr 3 Si, AlFeNi and AlCrFe

  20. Improved CVD Techniques for Depositing Passivation Layers of ICs

    Science.gov (United States)

    1975-10-01

    Halted PhilcoT xong, 43 o Flex b ru.an I ery t92." PrutptEnt,"e Electro nic -News; p. 34 --(M a~y 20, 1974). 355. 4t3fAtil, No 2(estbgru sey SpesHg-o e...and No. 4, 78 (1974). *J. G. Biddle Co., Plymouth Meeting, PA 19462. 222 NARROW AND WIDE INTERFERENCE CONTOUR 2 4 6 IC PE LLET Bonding pad oxide area

  1. High-speed deposition of titanium carbide coatings by laser-assisted metal–organic CVD

    Energy Technology Data Exchange (ETDEWEB)

    Gong, Yansheng [Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074 (China); Tu, Rong, E-mail: turong@whut.edu.cn [State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Goto, Takashi [Institute for Materials Research, Tohoku University, Aoba-ku, 2-1-1 Katahira, Sendai 980-8577 (Japan)

    2013-08-01

    Graphical abstract: - Highlights: • A semiconductor laser was first used to prepare wide-area LCVD-TiC{sub x} coatings. • The effect of laser power for the deposition of TiC{sub x} coatings was discussed. • TiC{sub x} coatings showed a columnar cross section and a dense surface texture. • TiC{sub x} coatings had a 1–4 order lower laser density than those of previous reports. • This study gives the possibility of LCVD applying on the preparation of TiC{sub x} coating. - Abstract: A semiconductor laser-assisted chemical vapor deposition (LCVD) of titanium carbide (TiC{sub x}) coatings on Al{sub 2}O{sub 3} substrate using tetrakis (diethylamido) titanium (TDEAT) and C{sub 2}H{sub 2} as source materials were investigated. The influences of laser power (P{sub L}) and pre-heating temperature (T{sub pre}) on the microstructure and deposition rate of TiC{sub x} coatings were examined. Single phase of TiC{sub x} coatings were obtained at P{sub L} = 100–200 W. TiC{sub x} coatings had a cauliflower-like surface and columnar cross section. TiC{sub x} coatings in the present study had the highest R{sub dep} (54 μm/h) at a relative low T{sub dep} than those of conventional CVD-TiC{sub x} coatings. The highest volume deposition rate (V{sub dep}) of TiC{sub x} coatings was about 4.7 × 10{sup −12} m{sup 3} s{sup −1}, which had 3–10{sup 5} times larger deposition area and 1–4 order lower laser density than those of previous LCVD using CO{sub 2}, Nd:YAG and argon ion laser.

  2. Plasma-Enhanced Chemical Vapor Deposition (PE-CVD) yields better Hydrolytical Stability of Biocompatible SiOx Thin Films on Implant Alumina Ceramics compared to Rapid Thermal Evaporation Physical Vapor Deposition (PVD).

    Science.gov (United States)

    Böke, Frederik; Giner, Ignacio; Keller, Adrian; Grundmeier, Guido; Fischer, Horst

    2016-07-20

    Densely sintered aluminum oxide (α-Al2O3) is chemically and biologically inert. To improve the interaction with biomolecules and cells, its surface has to be modified prior to use in biomedical applications. In this study, we compared two deposition techniques for adhesion promoting SiOx films to facilitate the coupling of stable organosilane monolayers on monolithic α-alumina; physical vapor deposition (PVD) by thermal evaporation and plasma enhanced chemical vapor deposition (PE-CVD). We also investigated the influence of etching on the formation of silanol surface groups using hydrogen peroxide and sulfuric acid solutions. The film characteristics, that is, surface morphology and surface chemistry, as well as the film stability and its adhesion properties under accelerated aging conditions were characterized by means of X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), inductively coupled plasma-optical emission spectroscopy (ICP-OES), and tensile strength tests. Differences in surface functionalization were investigated via two model organosilanes as well as the cell-cytotoxicity and viability on murine fibroblasts and human mesenchymal stromal cells (hMSC). We found that both SiOx interfaces did not affect the cell viability of both cell types. No significant differences between both films with regard to their interfacial tensile strength were detected, although failure mode analyses revealed a higher interfacial stability of the PE-CVD films compared to the PVD films. Twenty-eight day exposure to simulated body fluid (SBF) at 37 °C revealed a partial delamination of the thermally deposited PVD films whereas the PE-CVD films stayed largely intact. SiOx layers deposited by both PVD and PE-CVD may thus serve as viable adhesion-promoters for subsequent organosilane coupling agent binding to α-alumina. However, PE-CVD appears to be favorable for long-term direct film exposure to aqueous

  3. SiC interlayer by laser-cladding on WC-Co substrates for CVD diamond deposition

    Energy Technology Data Exchange (ETDEWEB)

    Contin, Andre; Fraga, Mariana Amorim; Vieira, Jose; Trava-Airoldi, Vladimir Jesus; Corat, Evaldo Jose, E-mail: andrecontin@yahoo.com.br [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil); Campos, Raonei Alves [Universidade Federal do Sul e Sudeste do Para (UNIFESSPA), Belem, PA (Brazil); Vasconcelos, Getulio [Instituto de Estudos Avancados (IEA), Sao Jose dos Campos, SP (Brazil)

    2016-07-01

    Full text: Despite their huge industrial potential and commercial interest, the direct diamond coating on cemented carbide (WC-Co) is limited, mainly because of the catalytic effect of Cobalt (Co) and the high difference in thermal expansion coefficient [1]. This results in poor adherence between diamond and WC-Co. In addition, the low diamond film adhesion to the cemented carbide useless for machining applications. Removal of Co binder from the substrate surface by superficial etching is one of the techniques used to improve the adhesion between diamond and WC-Co. For the present study, diamond films were deposited on WC-Co substrates with an intermediate barrier to block the Co diffusion to the surface substrate. The laser cladding process produced the SiC barrier, in which a powder layer is melted by a laser irradiation to create the coating on the substrate. The use of laser cladding is the novel method for an intermediate barrier for cemented carbides. The advantages of laser cladding include a faster processing speed, precision, versatility. We reported the application of pretreatment method called ESND (Electrostatic self-assembly seeding of nanocrystalline diamond). The nucleation density was around 10{sup 11}part/cm{sup 2}. Diamond films were grown by Hot Filament Chemical Vapor Deposition. Characterization of samples included Field Emission Gun-Scanning Electron Microscopy (FEG-SEM), Energy Dispersive X-ray (EDX), X-ray diffraction (XRD) and Raman Scattering Spectroscopy. Results showed that laser irradiation formed stable Co compounds in the interfacial barrier. It is because nucleation and good quality of diamond film since the cobalt are no longer free to migrate to the surface during the CVD diamond deposition. Reference: [1] Y. X. Cui, B. Shen, F. H. Sun. Diamond deposition on WC–Co substrate with amorphous SiC interlayer, Surface Engineering, 30, (2014) 237-243. (author)

  4. Effect of PbI2 deposition rate on two-step PVD/CVD all-vacuum prepared perovskite

    International Nuclear Information System (INIS)

    Ioakeimidis, Apostolos; Christodoulou, Christos; Lux-Steiner, Martha; Fostiropoulos, Konstantinos

    2016-01-01

    In this work we fabricate all-vacuum processed methyl ammonium lead halide perovskite by a sequence of physical vapour deposition of PbI 2 and chemical vapour deposition (CVD) of CH 3 NH 3 I under a static atmosphere. We demonstrate that for higher deposition rate the (001) planes of PbI 2 film show a higher degree of alignment parallel to the sample's surface. From X-ray diffraction data of the resulted perovskite film we derive that the intercalation rate of CH 3 NH 3 I is fostered for PbI 2 films with higher degree of (001) planes alignment. The stoichiometry of the produced perovskite film is also studied by Hard X-ray photoelectron spectroscopy measurements. Complete all-vacuum perovskite solar cells were fabricated on glass/ITO substrates coated by an ultra-thin (5 nm) Zn-phthalocyanine film as hole selective layer. A dependence of residual PbI 2 on the solar cells performance is displayed, while photovoltaic devices with efficiency up to η=11.6% were achieved. - Graphical abstract: A two-step PVD/CVD processed perovskite film with the CVD intercalation rate of CH 3 NCH 3 molecules been fostered by increasing the PVD rate of PbI 2 and prolonging the CVD time. - Highlights: • A simple PVD/CVD process for perovskite film production. • Increased PVD rate yields better alignment of the PbI 2 (001) crystallite planes. • CH 3 NH 3 I intercalation process fostered by increased PbI 2 PVD rate. • Stoichiometric CH 3 NH 3 PbI 3 suitable as absorber in photovoltaic applications • Reduced PbI 2 residue at the bottom of CH 3 NH 3 PbI 3 improves device performance.

  5. Evaluating electrically insulating films deposited on V-4% Cr-4% Ti by reactive CVD

    Energy Technology Data Exchange (ETDEWEB)

    Park, J.H.; Cho, W.D. [Argonne National Lab., IL (United States)

    1997-04-01

    Previous CaO coatings on V-4%Cr-4%Ti exhibited high-ohmic insulator behavior even though a small amount of vanadium from the alloy was incorporated in the coating. However, when the vanadium concentration in the coatings is > 15 wt%, the coating becomes conductive. When the vanadium concentration is high in localized areas, a calcium vanadate phase that exhibits semiconductor behavior can form. To explore this situation, CaO and Ca-V-O coatings were produced on vanadium alloys by chemical vapor deposition (CVD) and by a metallic-vapor process to investigate the electrical resistance of the coatings. Initially, the vanadium alloy specimens were either charged with oxygen in argon that contained trace levels of oxygen, or oxidized for 1.5-3 h in a 1% CO-CO{sub 2} gas mixture or in air to form vanadium oxide at 625-650{degrees}C. Most of the specimens were exposed to calcium vapor at 800-850{degrees}C. Initial and final weights were obtained to monitor each step, and surveillance samples were removed for examination by optical and scanning electron microscopy and electron-energy-dispersive and X-ray diffraction analysis; the electrical resistivity was also measured. The authors found that Ca-V-O films exhibited insulator behavior when the ratio of calcium concentration to vanadium concentration R in the film was > 0.9, and semiconductor or conductor behavior for R < 0.8. However, in some cases, semiconductor behavior was observed when CaO-coated samples with R > 0.98 were exposed in liquid lithium. Based on these studies, the authors conclude that semiconductor behavior occurs if a conductive calcium vanadate phase is present in localized regions in the CaO coating.

  6. Surface PIXE analysis of phosphorus in a thin SiO2 (P, B) CVD layer deposited onto Si substrate

    International Nuclear Information System (INIS)

    Roumie, M.; Nsouli, B.

    2001-01-01

    Phosphorus determination, at level of percent, in Si matrix is not an easy analytical task. The analyzed materials arc Borophosphosilicate glass which are an important component of silicon based semiconductor technology. It's a thin SiO2 layer (400 nm) doped with boron and phosphorus using, in general, CVD (Chemical Vapor Deposition) process, in order to improve its plasticity, and deposited onto Si substrate. Therefore, the mechanical behaviour of the CVD SiO2 (P, B) layer is very sensitive to the phosphorus concentration. In this work we explore the capability of FIXE (Particle Induced X-ray Emission) to monitor a rapid and accurate quantification of P which is usually very low in such materials (few percent of the thin CVD layer deposited onto a silicon substrate). A systematic study is undertaken using Proton (0.5-3 MeV energy) and helium (1-3 MeV energy) beams, different thickness of X-ray absorber (131 and 146 μm of Kapton filter) and different tilting angles (0,45,60 and 80 deg.). The optimized measurement conditions should improve the P signal detection comparing to the Si and Background ones

  7. Fabrication of Ultrasensitive Field-Effect Transistor DNA Biosensors by a Directional Transfer Technique Based on CVD-Grown Graphene.

    Science.gov (United States)

    Zheng, Chao; Huang, Le; Zhang, Hong; Sun, Zhongyue; Zhang, Zhiyong; Zhang, Guo-Jun

    2015-08-12

    Most graphene field-effect transistor (G-FET) biosensors are fabricated through a routine process, in which graphene is transferred onto a Si/SiO2 substrate and then devices are subsequently produced by micromanufacture processes. However, such a fabrication approach can introduce contamination onto the graphene surface during the lithographic process, resulting in interference for the subsequent biosensing. In this work, we have developed a novel directional transfer technique to fabricate G-FET biosensors based on chemical-vapor-deposition- (CVD-) grown single-layer graphene (SLG) and applied this biosensor for the sensitive detection of DNA. A FET device with six individual array sensors was first fabricated, and SLG obtained by the CVD-growth method was transferred onto the sensor surface in a directional manner. Afterward, peptide nucleic acid (PNA) was covalently immobilized on the graphene surface, and DNA detection was realized by applying specific target DNA to the PNA-functionalized G-FET biosensor. The developed G-FET biosensor was able to detect target DNA at concentrations as low as 10 fM, which is 1 order of magnitude lower than those reported in a previous work. In addition, the biosensor was capable of distinguishing the complementary DNA from one-base-mismatched DNA and noncomplementary DNA. The directional transfer technique for the fabrication of G-FET biosensors is simple, and the as-constructed G-FET DNA biosensor shows ultrasensitivity and high specificity, indicating its potential application in disease diagnostics as a point-of-care tool.

  8. Direct deposition of patterned nanocrystalline CVD diamond using an electrostatic self-assembly method with nanodiamond particles

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seung-Koo; Kim, Jong-Hoon; Jeong, Min-Goon; Lim, Dae-Soon [Department of Materials Science and Engineering, Korea University, Anam-Dong 5-1, Seoungbuk-Ku, Seoul 136-713 (Korea, Republic of); Song, Min-Jung, E-mail: dslim@korea.ac.kr [Center for Advanced Device Materials, Korea University, Anam-Dong 5-1, Seoungbuk-Ku, Seoul 136-713 (Korea, Republic of)

    2010-12-17

    Micron-sized and precise patterns of nanocrystalline CVD diamond were fabricated successfully on substrates using dispersed nanodiamond particles, charge connection by electrostatic self-assembly, and photolithography processes. Nanodiamond particles which had been dispersed using an attritional milling system were attached electrostatically on substrates as nuclei for diamond growth. In this milling process, poly sodium 4-styrene sulfonate (PSS) was added as an anionic dispersion agent to produce the PSS/nanodiamond conjugates. Ultra dispersed nanodiamond particles with a {zeta}-potential and average particle size of - 60.5 mV and {approx} 15 nm, respectively, were obtained after this milling process. These PSS/nanodiamond conjugates were attached electrostatically to a cationic polyethyleneimine (PEI) coated surface on to which a photoresist had been patterned in an aqueous solution of the PSS/nanodiamond conjugated suspension. A selectively seeded area was formed successfully using the above process. A hot filament chemical vapor deposition system was used to synthesize the nanocrystalline CVD diamond on the seeded area. Micron-sized, thin and precise nanocrystalline CVD diamond patterns with a high nucleation density (3.8 {+-} 0.4 x 10{sup 11} cm{sup -2}) and smooth surface were consequently fabricated.

  9. Direct deposition of patterned nanocrystalline CVD diamond using an electrostatic self-assembly method with nanodiamond particles

    International Nuclear Information System (INIS)

    Lee, Seung-Koo; Kim, Jong-Hoon; Jeong, Min-Goon; Lim, Dae-Soon; Song, Min-Jung

    2010-01-01

    Micron-sized and precise patterns of nanocrystalline CVD diamond were fabricated successfully on substrates using dispersed nanodiamond particles, charge connection by electrostatic self-assembly, and photolithography processes. Nanodiamond particles which had been dispersed using an attritional milling system were attached electrostatically on substrates as nuclei for diamond growth. In this milling process, poly sodium 4-styrene sulfonate (PSS) was added as an anionic dispersion agent to produce the PSS/nanodiamond conjugates. Ultra dispersed nanodiamond particles with a ζ-potential and average particle size of - 60.5 mV and ∼ 15 nm, respectively, were obtained after this milling process. These PSS/nanodiamond conjugates were attached electrostatically to a cationic polyethyleneimine (PEI) coated surface on to which a photoresist had been patterned in an aqueous solution of the PSS/nanodiamond conjugated suspension. A selectively seeded area was formed successfully using the above process. A hot filament chemical vapor deposition system was used to synthesize the nanocrystalline CVD diamond on the seeded area. Micron-sized, thin and precise nanocrystalline CVD diamond patterns with a high nucleation density (3.8 ± 0.4 x 10 11 cm -2 ) and smooth surface were consequently fabricated.

  10. A Comparative Study of Three Different Chemical Vapor Deposition Techniques of Carbon Nanotube Growth on Diamond Films

    Directory of Open Access Journals (Sweden)

    Betty T. Quinton

    2013-01-01

    Full Text Available This paper compares between the methods of growing carbon nanotubes (CNTs on diamond substrates and evaluates the quality of the CNTs and the interfacial strength. One potential application for these materials is a heat sink/spreader for high-power electronic devices. The CNTs and diamond substrates have a significantly higher specific thermal conductivity than traditional heat sink/spreader materials making them good replacement candidates. Only limited research has been performed on these CNT/diamond structures and their suitability of different growth methods. This study investigates three potential chemical vapor deposition (CVD techniques for growing CNTs on diamond: thermal CVD (T-CVD, microwave plasma-enhanced CVD (MPE-CVD, and floating catalyst thermal CVD (FCT-CVD. Scanning electron microscopy (SEM and high-resolution transmission electron microscopy (TEM were used to analyze the morphology and topology of the CNTs. Raman spectroscopy was used to assess the quality of the CNTs by determining the ID/IG peak intensity ratios. Additionally, the CNT/diamond samples were sonicated for qualitative comparisons of the durability of the CNT forests. T-CVD provided the largest diameter tubes, with catalysts residing mainly at the CNT/diamond interface. The MPE-CVD process yielded non uniform defective CNTs, and FCT-CVD resulted in the smallest diameter CNTs with catalyst particles imbedded throughout the length of the nanotubes.

  11. Ternary Precursors for Depositing I-III-VI2 Thin Films for Solar Cells via Spray CVD

    Science.gov (United States)

    Banger, K. K.; Hollingsworth, J. A.; Jin, M. H.-C.; Harris, J. D.; Duraj, S. A.; Smith, M.; Scheiman, D.; Bohannan, E. W.; Switzer, J. A.; Buhro, W. E.

    2002-01-01

    The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors (SSP's) can be used in either a hot or cold-wall spray chemical vapour deposition (CVD) reactor, for depositing CuInS2, CuGaS2, and CuGaInS2 at reduced temperatures (400 to 450 C), which display good electrical and optical properties suitable for photovoltaic (PV) devices. X-ray diffraction studies, energy dispersive spectroscopy (EDS), and scanning electron microscopy (SEM) confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures.

  12. Influence of electrodes on the photon energy deposition in CVD-diamond dosimeters studied with the Monte Carlo code PENELOPE

    International Nuclear Information System (INIS)

    Gorka, B; Nilsson, B; Fernandez-Varea, J M; Svensson, R; Brahme, A

    2006-01-01

    A new dosimeter, based on chemical vapour deposited (CVD) diamond as the active detector material, is being developed for dosimetry in radiotherapeutic beams. CVD-diamond is a very interesting material, since its atomic composition is close to that of human tissue and in principle it can be designed to introduce negligible perturbations to the radiation field and the dose distribution in the phantom due to its small size. However, non-tissue-equivalent structural components, such as electrodes, wires and encapsulation, need to be carefully selected as they may induce severe fluence perturbation and angular dependence, resulting in erroneous dose readings. By introducing metallic electrodes on the diamond crystals, interface phenomena between high- and low-atomic-number materials are created. Depending on the direction of the radiation field, an increased or decreased detector signal may be obtained. The small dimensions of the CVD-diamond layer and electrodes (around 100 μm and smaller) imply a higher sensitivity to the lack of charged-particle equilibrium and may cause severe interface phenomena. In the present study, we investigate the variation of energy deposition in the diamond detector for different photon-beam qualities, electrode materials and geometric configurations using the Monte Carlo code PENELOPE. The prototype detector was produced from a 50 μm thick CVD-diamond layer with 0.2 μm thick silver electrodes on both sides. The mean absorbed dose to the detector's active volume was modified in the presence of the electrodes by 1.7%, 2.1%, 1.5%, 0.6% and 0.9% for 1.25 MeV monoenergetic photons, a complete (i.e. shielded) 60 Co photon source spectrum and 6, 18 and 50 MV bremsstrahlung spectra, respectively. The shift in mean absorbed dose increases with increasing atomic number and thickness of the electrodes, and diminishes with increasing thickness of the diamond layer. From a dosimetric point of view, graphite would be an almost perfect electrode

  13. Spray deposition using impulse atomization technique

    International Nuclear Information System (INIS)

    Ellendt, N.; Schmidt, R.; Knabe, J.; Henein, H.; Uhlenwinkel, V.

    2004-01-01

    A novel technique, impulse atomization, has been used for spray deposition. This single fluid atomization technique leads to different spray characteristics and impact conditions of the droplets compared to gas atomization technique which is the common technique used for spray deposition. Deposition experiments with a Cu-6Sn alloy were conducted to evaluate the appropriateness of impulse atomization to produce dense material. Based on these experiments, a model has been developed to simulate the thermal history and the local solidification rates of the deposited material. A numerical study shows how different cooling conditions affect the solidification rate of the material

  14. Development Status of a CVD System to Deposit Tungsten onto UO2 Powder via the WCI6 Process

    Science.gov (United States)

    Mireles, O. R.; Kimberlin, A.; Broadway, J.; Hickman, R.

    2014-01-01

    Nuclear Thermal Propulsion (NTP) is under development for deep space exploration. NTP's high specific impulse (> 850 second) enables a large range of destinations, shorter trip durations, and improved reliability. W-60vol%UO2 CERMET fuel development efforts emphasize fabrication, performance testing and process optimization to meet service life requirements. Fuel elements must be able to survive operation in excess of 2850 K, exposure to flowing hydrogen (H2), vibration, acoustic, and radiation conditions. CTE mismatch between W and UO2 result in high thermal stresses and lead to mechanical failure as a result UO2 reduction by hot hydrogen (H2) [1]. Improved powder metallurgy fabrication process control and mitigated fuel loss can be attained by coating UO2 starting powders within a layer of high density tungsten [2]. This paper discusses the advances of a fluidized bed chemical vapor deposition (CVD) system that utilizes the H2-WCl6 reduction process.

  15. Filament poisoning at typical carbon nanotube deposition conditions by hot-filament CVD

    CSIR Research Space (South Africa)

    Oliphant, CJ

    2009-05-01

    Full Text Available extensively used for the deposition of various materials, including diamond [1], polymers [2], silicon thin films [3], boron-carbon-nitride layers [4] and carbon nanotubes (CNTs) [5]. The process relies on the catalytic decomposition of precursor gases... (Ho) twice as efficient as a W filament during the deposition of microcrystalline silicon thin films [6]. Reactions between the precursor gases and the heated filament result in changes of the structural properties of the filaments; a process...

  16. Effect of surface irradiation during the photo-CVD deposition of a-Si:H thin films. Hikari CVD ho ni yoru amorphous silicon sakuseiji no kiban hikari reiki koka

    Energy Technology Data Exchange (ETDEWEB)

    Tasaka, K.; Doering, H.; Hashimoto, K.; Fujishima, A. (The University of Tokyo, Tokyo (Japan))

    1990-12-06

    This paper shows the impact of the irradiation from an additional light source during the deposition of hydrogenated amorphous silicon by photo-CVD deposition. Using a mercury sensitized photo-CVD process from Disilan (Si {sub 2} H {sub 6}) and hydrogen, silicon was deposited. A 40W low pressure mercury lamp was applied as the light source. A portion of the substrate was in addition irradiated using an Xg-He lamp through a thermal filter. Irradiation of the substrate using only Xg-He lamp produced no deposition, since this light has a wavelength which is too long to produce the SiH {sub 3}-radicals needed for Si deposition. The additional Xg-He light source was discovered to cause an increased thickness of deposited a-Si:H film and a transmission of the band structure. The reasons of these are considered that the influence of irradiation is not limited to film thickness, but that irradiation also impacts the composition of the a-Si:H film so as to cause a reduction in the hydrogen content. 10 figs., 1 tab.

  17. CVD boron nitride infiltration of fibrous structures: properties of low temprature deposits

    International Nuclear Information System (INIS)

    Gebhardt, J.J.

    1973-01-01

    The pyrolytic infiltration of boron nitride and silica fibrous structures with boron nitride was investigated using the thermal decomposition of B-trichloroborazole (TCB) to provide the matrix surrounding felted and 4-directional braided constructions. The deposition precursor was generated on a continuous basis by the reaction between boron trichloride and ammonium chloride in a fixed bed reactor under conditions of total conversion of the trichloride: 3BCl 3 + 3NH 4 Cl = B 3 N 3 H 3 Cl 3 + 9HCl. Deposition rates in boron nitride felt specimens varied between 8 and 28 μm/h, depending on the distance from the exterior surface at the minimum deposition temperature used (1100 0 C ). Infiltration of 4-directional silica braids was poorer because of clogging of the fiber bundle surfaces and access paths to voids in the weave. Deposits prepared at 1100 0 C and above were stable to moisture and consisted of glassy transparent materials which had no discernible x-ray diffraction pattern. Heat treatment of low temperature deposits in nitrogen at 1800 0 C caused significant growth of the crystallites and the emergence of x-ray patterns characteristic of hexagonal boron nitride. Heat treatment in vacuum caused changes in the infrared spectrum which could be correlated with mass analyses of the gases evolved. Loss of hydrogen with amines predominated to about 1500 0 C above which point the loss of nitrogen became significant. (14 figures) (U.S.)

  18. Deposition of silicon oxynitride at room temperature by Inductively Coupled Plasma-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Zambom, Luis da Silva [MPCE-Faculdade de Tecnologia de Sao Paulo - CEETEPS, Pca Coronel Fernando Prestes, 30, Sao Paulo - CEP 01124-060 (Brazil)]. E-mail: zambom@lsi.usp.br; Verdonck, Patrick [PSI-LSI-Escola Politecnica da Universidade de Sao Paulo (Brazil)]. E-mail: patrick@lsi.usp.br

    2006-10-25

    Oxynitride thin films are used in important optical applications and as gate dielectric for MOS devices. Their traditional deposition processes have the drawbacks that high temperatures are needed, high mechanical stresses are induced and the deposition rate is low. Plasma assisted processes may alleviate these problems. In this study, oxynitride films were deposited at room temperature through the chemical reaction of silane, nitrogen and nitrous oxide (N{sub 2}O), in a conventional LPCVD furnace, which was modified into a high density Inductively Coupled Plasma (ICP) reactor. Deposition rates increased with applied coil power and were never lower than 10 nm/min, quite high for room temperature depositions. The films' refractive indexes and FTIR spectra indicate that for processes with low N{sub 2}O gas concentrations, when mixed together with N{sub 2} and SiH{sub 4}, nitrogen was incorporated in the film. This incorporation increased the resistivity, which was up to 70 G{omega} cm, increased the refractive index, from approximately 1.47 to approximately 1.50, and decreased the dielectric constant of these films, which varied in the 4-14 range. These characteristics are adequate for electric applications e.g. for TFT fabrication on glass or polymers which can not stand high temperature steps.

  19. Carbon nanotubes and nanofibers synthesized by CVD on nickel coatings deposited with a vacuum arc

    Energy Technology Data Exchange (ETDEWEB)

    Escobar, M. [LP and MC, Dep. de Fisica-FCEyN-UBA, Cdad. Universitaria Pab.1, (1428), Buenos Aires (Argentina); DQIAQF-FCEyN-UBA, Cdad. Universitaria Pab.1, (1428), Buenos Aires (Argentina); Giuliani, L. [INFIP, CONICET, Dep. de Fisica, FCEyN-UBA, Cdad. Univ. Pab.1, (1428), Buenos Aires (Argentina); Candal, R.J. [INQUIMAE-FCEyN-UBA, Cdad. Universitaria Pab.2, (1428), Buenos Aires (Argentina); Lamas, D.G. [CINSO, CITEFA, CONICET, J.B. de La Salle 4397, (1603) V.Martelli, Buenos Aires (Argentina); Caso, A. [LP and MC, Dep. de Fisica-FCEyN-UBA, Cdad. Universitaria Pab.1, (1428), Buenos Aires (Argentina); Rubiolo, G. [LP and MC, Dep. de Fisica-FCEyN-UBA, Cdad. Universitaria Pab.1, (1428), Buenos Aires (Argentina); UAM-CNEA, Av. Gral Paz 1499, (1650) San Martin, Buenos Aires (Argentina); Grondona, D. [INFIP, CONICET, Dep. de Fisica, FCEyN-UBA, Cdad. Univ. Pab.1, (1428), Buenos Aires (Argentina); Goyanes, S. [LP and MC, Dep. de Fisica-FCEyN-UBA, Cdad. Universitaria Pab.1, (1428), Buenos Aires (Argentina); Marquez, A., E-mail: amarquez@df.uba.a [INFIP, CONICET, Dep. de Fisica, FCEyN-UBA, Cdad. Univ. Pab.1, (1428), Buenos Aires (Argentina)

    2010-04-16

    Nanotubes and nanofibers were grown on Ni coatings deposited by plasma generated with a pulsed vacuum arc on silicon wafers using three different bias conditions: at floating potential (approximately +30 V respect to the grounded cathode); at ground potential; and at -60 V. An atomic force microscopy study showed that the Ni film morphology was affected by the bias condition of the substrate. The morphology of carbonaceous species depended on Ni-films characteristics. FE-SEM and TEM analyses have shown that nanofibers growth was favoured on Ni coatings deposited at -60 V whereas nanotubes grew mainly on Ni coatings obtained at floating and ground potentials. Hence, this new method to produce the precursor can be optimized to obtain nanotubes or nanofibers varying the substrate bias for the Ni deposition.

  20. Influence of composition and structure on the mechanical properties of BCN coatings deposited by thermal CVD

    Energy Technology Data Exchange (ETDEWEB)

    Stoeckel, S.; Weise, K.; Dietrich, D.; Thamm, T.; Braun, M.; Cremer, R.; Neuschuetz, D.; Marx, G

    2002-12-02

    BCN films were deposited by isothermal chemical vapour deposition from gaseous mixtures of trimethylborazine, toluene and ammonia. The films were analysed with respect to chemical state, composition, morphology and microstructure on the one side oxidation behaviour and hardness on the other side. X-ray spectroscopy (WDX), Raman and infrared spectroscopy, differential thermal analysis, X-ray diffraction and transmission electron spectroscopy were employed for film characterization. A microhardness of maximum 20 GPa was achieved, affected by carbon content, by the way of its incorporation into the hexagonal turbostratic lattice as well as by the crystallite size and its texture.

  1. Influence of composition and structure on the mechanical properties of BCN coatings deposited by thermal CVD

    International Nuclear Information System (INIS)

    Stoeckel, S.; Weise, K.; Dietrich, D.; Thamm, T.; Braun, M.; Cremer, R.; Neuschuetz, D.; Marx, G.

    2002-01-01

    BCN films were deposited by isothermal chemical vapour deposition from gaseous mixtures of trimethylborazine, toluene and ammonia. The films were analysed with respect to chemical state, composition, morphology and microstructure on the one side oxidation behaviour and hardness on the other side. X-ray spectroscopy (WDX), Raman and infrared spectroscopy, differential thermal analysis, X-ray diffraction and transmission electron spectroscopy were employed for film characterization. A microhardness of maximum 20 GPa was achieved, affected by carbon content, by the way of its incorporation into the hexagonal turbostratic lattice as well as by the crystallite size and its texture

  2. Advances in silicon carbide Chemical Vapor Deposition (CVD) for semiconductor device fabrication

    Science.gov (United States)

    Powell, J. Anthony; Petit, Jeremy B.; Matus, Lawrence G.

    1991-01-01

    Improved SiC chemical vapor deposition films of both 3C and 6H polytypes were grown on vicinal (0001) 6H-SiC wafers cut from single-crystal boules. These films were produced from silane and propane in hydrogen at one atmosphere at a temperature of 1725 K. Among the more important factors which affected the structure and morphology of the grown films were the tilt angle of the substrate, the polarity of the growth surface, and the pregrowth surface treatment of the substrate. With proper pregrowth surface treatment, 6H films were grown on 6H substrates with tilt angles as small as 0.1 degrees. In addition, 3C could be induced to grow within selected regions on a 6H substrate. The polarity of the substrate was a large factor in the incorporation of dopants during epitaxial growth. A new growth model is discussed which explains the control of SiC polytype in epitaxial growth on vicinal (0001) SiC substrates.

  3. The effectiveness of Ti implants as barriers to carbon diffusion in Ti implanted steel under CVD diamond deposition conditions

    International Nuclear Information System (INIS)

    Weiser, P.S.; Prawer, S.; Paterson, P.J.K.

    1993-01-01

    The growth of chemical vapour deposited (CVD) diamond onto iron based substrates complicated by preferential soot formation and carbon diffusion into the substrate [1], leading to poor quality films and poor adhesion. In the initial stages of exposure to a microwave plasma, a layer of graphite is rapidly formed on an untreated Fe based substrate. Once this graphite layer reaches a certain thickness, reasonable quality diamond nucleates and grows upon it. However, the diamond film easily delaminates from the substrate, the weak link being the graphitic layer. Following an initial success in using a TiN barrier layer to inhibit the formation of such a graphitic layer the authors report on attempts to use an implanted Ti layer for the same purpose. This work was prompted by observation that, although the TiN proved to be an extremely effective diffusion barrier, adhesion may be further enhanced by the formation of a TiC interface layer between the diamond film and the Fe substrate. 3 refs., 6 figs

  4. The effectiveness of Ti implants as barriers to carbon diffusion in Ti implanted steel under CVD diamond deposition conditions

    Energy Technology Data Exchange (ETDEWEB)

    Weiser, P S; Prawer, S [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Hoffman, A [Technion-Israel Inst. of Tech., Haifa (Israel). Dept. of Chemistry; Evan, P J [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Paterson, P J.K. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1994-12-31

    The growth of chemical vapour deposited (CVD) diamond onto iron based substrates complicated by preferential soot formation and carbon diffusion into the substrate [1], leading to poor quality films and poor adhesion. In the initial stages of exposure to a microwave plasma, a layer of graphite is rapidly formed on an untreated Fe based substrate. Once this graphite layer reaches a certain thickness, reasonable quality diamond nucleates and grows upon it. However, the diamond film easily delaminates from the substrate, the weak link being the graphitic layer. Following an initial success in using a TiN barrier layer to inhibit the formation of such a graphitic layer the authors report on attempts to use an implanted Ti layer for the same purpose. This work was prompted by observation that, although the TiN proved to be an extremely effective diffusion barrier, adhesion may be further enhanced by the formation of a TiC interface layer between the diamond film and the Fe substrate. 3 refs., 6 figs.

  5. The effectiveness of Ti implants as barriers to carbon diffusion in Ti implanted steel under CVD diamond deposition conditions

    Energy Technology Data Exchange (ETDEWEB)

    Weiser, P.S.; Prawer, S. [Melbourne Univ., Parkville, VIC (Australia). School of Physics; Hoffman, A. [Technion-Israel Inst. of Tech., Haifa (Israel). Dept. of Chemistry; Evan, P.J. [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW (Australia); Paterson, P.J.K. [Royal Melbourne Inst. of Tech., VIC (Australia)

    1993-12-31

    The growth of chemical vapour deposited (CVD) diamond onto iron based substrates complicated by preferential soot formation and carbon diffusion into the substrate [1], leading to poor quality films and poor adhesion. In the initial stages of exposure to a microwave plasma, a layer of graphite is rapidly formed on an untreated Fe based substrate. Once this graphite layer reaches a certain thickness, reasonable quality diamond nucleates and grows upon it. However, the diamond film easily delaminates from the substrate, the weak link being the graphitic layer. Following an initial success in using a TiN barrier layer to inhibit the formation of such a graphitic layer the authors report on attempts to use an implanted Ti layer for the same purpose. This work was prompted by observation that, although the TiN proved to be an extremely effective diffusion barrier, adhesion may be further enhanced by the formation of a TiC interface layer between the diamond film and the Fe substrate. 3 refs., 6 figs.

  6. Charge transport and X-ray dosimetry performance of a single crystal CVD diamond device fabricated with pulsed laser deposited electrodes

    International Nuclear Information System (INIS)

    Abdel-Rahman, M.A.E.; Abdel-Rahman, M.A.E.; Lohstroh, A.; Bryant, P.; Jayawardena, I.

    2013-01-01

    The deposition of amorphous Carbon mixed with Nickel (C/Ni) as electrodes for a diamond radiation detector using Pulsed Laser Deposition (PLD) was demonstrated previously as a novel technique for producing near-tissue equivalent X-ray dosimeters based on polycrystalline diamond. In this study, we present the first characterisation of a single crystal CVD diamond sandwich detector (of 80 nm thickness) fabricated with this method, labelled SC-C/Ni. To examine the performance of PLD C/Ni as an electrical contact, alpha spectroscopy and x-ray induced photocurrents were studied as a function of applied bias voltage at room temperature and compared to those of polycrystalline CVD diamond detectors (PC-C/Ni); the spectroscopy data allows us to separate electron and hole contributions to the charge transport, whereas the X-ray data was investigated in terms of, linearity and dose rate dependence, sensitivity, signal to noise ratio, photoconductive gain, reproducibility and time response (rise and fall-off times). In the case of electron sensitive alpha induced signals, a charge collection efficiency (CCE) higher than 90 % has been observed at a bias of -40 V and 100 % CCE at -300 V, with an energy resolution of ∼3 % for 5.49 MeV alpha particles. The hole sample showed very poor spectroscopy performance for hole sensitive signals up to 200 Volt; this inhibited a similar numerical analysis to be carried out in a meaningful way. The dosimetric characteristic show a high signal to noise ratio (SNR) of ∼7.3x10 3 , an approximately linear relationship between the photocurrent and the dose rate and a sensitivity of 4.87 μC/Gy.mm 3 . The photoconductive gain is estimated to around 20, this gain might be supported by hole trapping effects as indicated in the alpha spectroscopy. The observed rise and fall-off times are less than 2 and 0.56 seconds, respectively - and mainly reflect the switching time of the X-ray tube used.The reproducibility of (0.504 %) approaches the value

  7. Magnetic filtered plasma deposition and implantation technique

    CERN Document Server

    Zhang Hui Xing; Wu Xian Ying

    2002-01-01

    A high dense metal plasma can be produced by using cathodic vacuum arc discharge technique. The microparticles emitted from the cathode in the metal plasma can be removed when the metal plasma passes through the magnetic filter. It is a new technique for making high quality, fine and close thin films which have very widespread applications. The authors describe the applications of cathodic vacuum arc technique, and then a filtered plasma deposition and ion implantation system as well as its applications

  8. Raman Spectroscopic Study of As-Deposited and Exfoliated Defected Graphene Grown on (001 Si Substrates by CVD

    Directory of Open Access Journals (Sweden)

    T. I. Milenov

    2017-01-01

    Full Text Available We present here results on a Raman spectroscopic study of the deposited defected graphene on Si substrates by chemical vapor deposition (thermal decomposition of acetone. The graphene films are not deposited on the (001 Si substrate directly but on two types of interlayers of mixed phases unintentionally deposited on the substrates: а diamond-like carbon (designated here as DLC and amorphous carbon (designated here as αC are dominated ones. The performed thorough Raman spectroscopic study of as-deposited as well as exfoliated specimens by two different techniques using different excitation wavelengths (488, 514, and 613 nm as well as polarized Raman spectroscopy establishes that the composition of the designated DLC layers varies with depth: the initial layers on the Si substrate consist of DLC, nanodiamond species, and C70 fullerenes while the upper ones are dominated by DLC with an occasional presence of C70 fullerenes. The αC interlayer is dominated by turbostratic graphite and contains a larger quantity of C70 than the DLC-designated interlayers. The results of polarized and unpolarized Raman spectroscopic studies of as-grown and exfoliated graphene films tend to assume that single- to three-layered defected graphene is deposited on the interlayers. It can be concluded that the observed slight upshift of the 2D band as well as the broadening of 2D band should be related to the strain and doping.

  9. Anticorrosive coating of SixOyCz on metallic substrates applied with the plasma CVD technique

    International Nuclear Information System (INIS)

    Perillo, P; Lasorsa, C; Versaci, R

    2006-01-01

    This work deals with the production of anticorrosive coatings of Si x O y C z on metallic substrates by PECVD (Plasma Enhanced Chemical Vapor Deposition) in a two layer coating, with a gaseous mixture using methyltrimethoxysilane (Z6070) with the contribution of O 2 and methane as reactive gases. The process involves two steps, the first with the substrate thermalized to 500 o C and the second step with the substrate at room temperature. In the first step the process is carried out with the mixture of O 2 and Z6070, in the second step methane is added to the mixture of the plasma forming gases. The coatings were carried out on AISI 410 stainless steel, AISI M2 steel, titanium and AA6061 aluminum substrates. This work presents the preliminary results of the electrochemical evaluation and the mechanical properties of the coating. Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS/ESCA ), and scanning electron microscopy were used for this study. Electrochemical techniques were used to study the reaction to the corrosion of the coatings. Potentiodynamic polarization curves were prepared in a solution of 5% H 2 SO 4 and in NaCl 0,1M. The tests were undertaken at room temperature. This process is presented as an alternative to the conventional immersion processes by the sol-gel method, which produces the polymerization of the reagent as a result of the effect of the oxygen from the environment, while the plasma process produces very different chemical reactions in the center of the plasma itself with coatings also different (CW)

  10. Sputtering. [as deposition technique in mechanical engineering

    Science.gov (United States)

    Spalvins, T.

    1976-01-01

    This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

  11. CVD-based techniques for the synthesis of nanographites and nanodiamonds

    International Nuclear Information System (INIS)

    Guglielmotti, V.; Cianchetta, I.; Orlanducci, S.; Tamburri, E.; Gay, S.; Lavecchia, T.; Reina, G.; Terranova, M.L.; Passeri, D.; Rossi, M.

    2013-01-01

    We report about some Chemical Vapor Deposition approaches used to produce a variety of C-sp 2 and C-sp 3 crystalline nanostructures. The methodologies developed in our laboratories provide custom-made solutions for the fabrication of specific carbon nanomaterials with properties tailored for applications in the field of nanotechnology.

  12. Low-temperature graphene synthesis using microwave plasma CVD

    International Nuclear Information System (INIS)

    Yamada, Takatoshi; Kim, Jaeho; Ishihara, Masatou; Hasegawa, Masataka

    2013-01-01

    The graphene chemical vapour deposition (CVD) technique at substrate temperatures around 300 °C by a microwave plasma sustained by surface waves (surface wave plasma chemical vapour deposition, SWP-CVD) is discussed. A low-temperature, large-area and high-deposition-rate CVD process for graphene films was developed. It was found from Raman spectra that the deposited films on copper (Cu) substrates consisted of high-quality graphene flakes. The fabricated graphene transparent conductive electrode showed uniform optical transmittance and sheet resistance, which suggests the possibility of graphene for practical electrical and optoelectronic applications. It is intriguing that graphene was successfully deposited on aluminium (Al) substrates, for which we did not expect the catalytic effect to decompose hydrocarbon and hydrogen molecules. We developed a roll-to-roll SWP-CVD system for continuous graphene film deposition towards industrial mass production. A pair of winder and unwinder systems of Cu film was installed in the plasma CVD apparatus. Uniform Raman spectra were confirmed over the whole width of 297 mm of Cu films. We successfully transferred the deposited graphene onto PET films, and confirmed a transmittance of about 95% and a sheet resistance of less than 7 × 10 5 Ω/sq.

  13. Low-temperature graphene synthesis using microwave plasma CVD

    Science.gov (United States)

    Yamada, Takatoshi; Kim, Jaeho; Ishihara, Masatou; Hasegawa, Masataka

    2013-02-01

    The graphene chemical vapour deposition (CVD) technique at substrate temperatures around 300 °C by a microwave plasma sustained by surface waves (surface wave plasma chemical vapour deposition, SWP-CVD) is discussed. A low-temperature, large-area and high-deposition-rate CVD process for graphene films was developed. It was found from Raman spectra that the deposited films on copper (Cu) substrates consisted of high-quality graphene flakes. The fabricated graphene transparent conductive electrode showed uniform optical transmittance and sheet resistance, which suggests the possibility of graphene for practical electrical and optoelectronic applications. It is intriguing that graphene was successfully deposited on aluminium (Al) substrates, for which we did not expect the catalytic effect to decompose hydrocarbon and hydrogen molecules. We developed a roll-to-roll SWP-CVD system for continuous graphene film deposition towards industrial mass production. A pair of winder and unwinder systems of Cu film was installed in the plasma CVD apparatus. Uniform Raman spectra were confirmed over the whole width of 297 mm of Cu films. We successfully transferred the deposited graphene onto PET films, and confirmed a transmittance of about 95% and a sheet resistance of less than 7 × 105 Ω/sq.

  14. Effect of PbI{sub 2} deposition rate on two-step PVD/CVD all-vacuum prepared perovskite

    Energy Technology Data Exchange (ETDEWEB)

    Ioakeimidis, Apostolos; Christodoulou, Christos; Lux-Steiner, Martha; Fostiropoulos, Konstantinos, E-mail: fostiropoulos@helmholtz-berlin.de

    2016-12-15

    In this work we fabricate all-vacuum processed methyl ammonium lead halide perovskite by a sequence of physical vapour deposition of PbI{sub 2} and chemical vapour deposition (CVD) of CH{sub 3}NH{sub 3}I under a static atmosphere. We demonstrate that for higher deposition rate the (001) planes of PbI{sub 2} film show a higher degree of alignment parallel to the sample's surface. From X-ray diffraction data of the resulted perovskite film we derive that the intercalation rate of CH{sub 3}NH{sub 3}I is fostered for PbI{sub 2} films with higher degree of (001) planes alignment. The stoichiometry of the produced perovskite film is also studied by Hard X-ray photoelectron spectroscopy measurements. Complete all-vacuum perovskite solar cells were fabricated on glass/ITO substrates coated by an ultra-thin (5 nm) Zn-phthalocyanine film as hole selective layer. A dependence of residual PbI{sub 2} on the solar cells performance is displayed, while photovoltaic devices with efficiency up to η=11.6% were achieved. - Graphical abstract: A two-step PVD/CVD processed perovskite film with the CVD intercalation rate of CH{sub 3}NCH{sub 3} molecules been fostered by increasing the PVD rate of PbI{sub 2} and prolonging the CVD time. - Highlights: • A simple PVD/CVD process for perovskite film production. • Increased PVD rate yields better alignment of the PbI{sub 2} (001) crystallite planes. • CH{sub 3}NH{sub 3}I intercalation process fostered by increased PbI{sub 2} PVD rate. • Stoichiometric CH{sub 3}NH{sub 3}PbI{sub 3} suitable as absorber in photovoltaic applications • Reduced PbI{sub 2} residue at the bottom of CH{sub 3}NH{sub 3}PbI{sub 3} improves device performance.

  15. Synthesis of few-layer graphene on a Ni substrate by using DC plasma enhanced chemical vapor deposition (PE-CVD)

    International Nuclear Information System (INIS)

    Kim, Jeong Hyuk; Castro, Edward Joseph; Hwang, Yong Gyoo; Lee, Choong Hun

    2011-01-01

    In this work, few-layer graphene (FLG) was successfully grown on polycrystalline Ni a large scale by using DC plasma enhanced chemical vapor deposition (DC PE-CVD), which may serve as an alternative route in large-scale graphene synthesis. The synthesis time had an effect on the quality of the graphene produced. The applied DC voltage, on the other hand, influenced the minimization of the defect densities in the graphene grown. We also present a method of producing a free-standing polymethyl methacrylate (PMMA)/graphene membrane on a FeCl 3(aq) solution, which could then be transferred to the desired substrate.

  16. CVD in nuclear energy

    International Nuclear Information System (INIS)

    Nickel, H.

    1981-08-01

    CVD-deposited pyrocarbon, especially the coatings of nuclear fuel kernels show a structure depending on many parameters such as deposition temperature, nature and pressure of the pyrolysis gas, nature of the substrate, geometry of the deposition system, etc. Because of the variety of pyrocarbon different characterization methods have been developed or qualified for this new application. Additionally classical characterization procedures are available. Beside theoretical aspects concerning the formation and deposition mechanism of pyrocarbon from the gas phase the behaviour of such coatings under irradiation with fast neutrons is discussed. (orig.) [de

  17. Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

    KAUST Repository

    Shi, Yumeng; Li, Henan; Li, Lain-Jong

    2014-01-01

    In recent years there have been many breakthroughs in two-dimensional (2D) nanomaterials, among which the transition metal dichalcogenides (TMDs) attract significant attention owing to their unusual properties associated with their strictly defined dimensionalities. TMD materials with a generalized formula of MX2, where M is a transition metal and X is a chalcogen, represent a diverse and largely untapped source of 2D systems. Semiconducting TMD monolayers such as MoS2, MoSe2, WSe2 and WS2 have been demonstrated to be feasible for future electronics and optoelectronics. The exotic electronic properties and high specific surface areas of 2D TMDs offer unlimited potential in various fields including sensing, catalysis, and energy storage applications. Very recently, the chemical vapour deposition technique (CVD) has shown great promise to generate high-quality TMD layers with a scalable size, controllable thickness and excellent electronic properties. Wafer-scale deposition of mono to few layer TMD films has been obtained. Despite the initial success in the CVD synthesis of TMDs, substantial research studies on extending the methodology open up a new way for substitution doping, formation of monolayer alloys and producing TMD stacking structures or superlattices. In this tutorial review, we will introduce the latest development of the synthesis of monolayer TMDs by CVD approaches.

  18. Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

    KAUST Repository

    Shi, Yumeng

    2014-10-20

    In recent years there have been many breakthroughs in two-dimensional (2D) nanomaterials, among which the transition metal dichalcogenides (TMDs) attract significant attention owing to their unusual properties associated with their strictly defined dimensionalities. TMD materials with a generalized formula of MX2, where M is a transition metal and X is a chalcogen, represent a diverse and largely untapped source of 2D systems. Semiconducting TMD monolayers such as MoS2, MoSe2, WSe2 and WS2 have been demonstrated to be feasible for future electronics and optoelectronics. The exotic electronic properties and high specific surface areas of 2D TMDs offer unlimited potential in various fields including sensing, catalysis, and energy storage applications. Very recently, the chemical vapour deposition technique (CVD) has shown great promise to generate high-quality TMD layers with a scalable size, controllable thickness and excellent electronic properties. Wafer-scale deposition of mono to few layer TMD films has been obtained. Despite the initial success in the CVD synthesis of TMDs, substantial research studies on extending the methodology open up a new way for substitution doping, formation of monolayer alloys and producing TMD stacking structures or superlattices. In this tutorial review, we will introduce the latest development of the synthesis of monolayer TMDs by CVD approaches.

  19. Delaminated Transfer of CVD Graphene

    Science.gov (United States)

    Clavijo, Alexis; Mao, Jinhai; Tilak, Nikhil; Altvater, Michael; Andrei, Eva

    Single layer graphene is commonly synthesized by dissociation of a carbonaceous gas at high temperatures in the presence of a metallic catalyst in a process known as Chemical Vapor Deposition or CVD. Although it is possible to achieve high quality graphene by CVD, the standard transfer technique of etching away the metallic catalyst is wasteful and jeopardizes the quality of the graphene film by contamination from etchants. Thus, development of a clean transfer technique and preservation of the parent substrate remain prominent hurdles to overcome. In this study, we employ a copper pretreatment technique and optimized parameters for growth of high quality single layer graphene at atmospheric pressure. We address the transfer challenge by utilizing the adhesive properties between a polymer film and graphene to achieve etchant-free transfer of graphene films from a copper substrate. Based on this concept we developed a technique for dry delamination and transferring of graphene to hexagonal boron nitride substrates, which produced high quality graphene films while at the same time preserving the integrity of the copper catalyst for reuse. DOE-FG02-99ER45742, Ronald E. McNair Postbaccalaureate Achievement Program.

  20. ZnO nanowall network grown by chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mukherjee, Amrita, E-mail: but.then.perhaps@gmail.com; Dhar, Subhabrata [Department of Physics, Indian Institute of Technology Bombay, Powai, Mumbai-400076 (India)

    2015-06-24

    Network of wedge shaped ZnO nanowalls are grown on c-sapphire by Chemical Vapor Deposition (CVD) technique. Structural studies using x-ray diffraction show much better crystallinity in the nanowall sample as compared to the continuous film. Moreover, the defect related broad green luminescence is found to be suppressed in the nanowall sample. The low temperature photoluminescence study also suggests the quantum confinement of carriers in nanowall sample. Electrical studies performed on the nanowalls show higher conductivity, which has been explained in terms of the reduction of scattering cross-section as a result of 1D quantum confinement of carriers on the tip of the nanowalls.

  1. Techniques for freeing deposited canisters. Final report

    International Nuclear Information System (INIS)

    Kalbantner, P.; Sjoeblom, R.

    2000-06-01

    Four different techniques for removal of the bentonite buffer around a deposited canister have been identified, studied and evaluated: mechanical, hydrodynamical, thermal, and electrical techniques. Different techniques to determine the position of the canister in the buffer have also been studied: mechanical, electromagnetic, thermal and acoustic techniques. The mechanical techniques studied are full-face boring, milling and core-drilling. It is expected that the bentonite can be machined relatively easily. It is assessed that cooling by means of flushing water over the outer surfaces of the tools is not feasible in view of the tendency of bentonite to form a gel. The mechanical techniques are characterized by the potential of damaging the canister, a high degree of complexity, and high requirements of energy/power input. The generated byproduct is solid and cannot be removed by means of flushing. Removal is assessed to be simplest in conjunction with full-face boring and most difficult when coredrilling is applied. The hydrodynamical techniques comprise high-pressure hydrodynamic techniques, where pressures above and below 100 bar, and low pressure hydrodynamical techniques (< 10 bar) are separated. At pressures above 100 bar, a water jet with a diameter of approximately a millimetre cuts through the material. If desired, sand can be added to the jet. At pressures below 100 bar the jet has a diameter of one or a few centimetres. The liquid contains a few percent of salt, which is essential for the efficiency of the process. The flushing is important not only because it removes the modified bentonite but also because it frees previously unaffected bentonite and thereby makes it accessible to chemical modification. All of the hydrodynamical techniques are applicable for freeing the end surface as well as the mantle surface. The degree of complexity and the requirement on energy/power decrease with a decrease in pressure. A significant potential for damaging the

  2. AFM Morphology Study of Si1-Y GeY:H Films Deposited by LF PE CVD from Silane-Germane with Different

    International Nuclear Information System (INIS)

    Sanchez, L; Kosarev, A

    2005-01-01

    The morphology of Si 1-Y Ge Y :H films in the range of Y=0.23 to 0.9 has been studied by AFM. The films were deposited by Low Frequency (LF) PE CVD at substrate temperature T s =300 C and discharge frequency f=110 kHz from silane+germane mixture with and without, Ar and H 2 dilution. The films were deposited on silicon and glass substrates. AFM images were taken and analyzed for 2 x 2 mm 2 area. All the images demonstrated ''grain'' like structure, which was characterized by the height distribution function F(H) average roughness , standard height deviation Rq, lateral correlation length L c area distribution function F(s), mean grain area , diameter distribution function F(d), and mean grain diameter . The roughness of the films monotonically increases with Y for all dilutions, but more significantly in the films deposited without dilution. L c continuously grows with Y in the films deposited without dilution, while more complex behavior L c (Y) is observed in the films deposited with H- or Ar dilution. The sharpness of F(H) characterized by curtosis γ depends on dilution and the sharpest F(H) are for the films deposited with Ar (γ=5.30,Y=0.23) and without dilution (γ=4.3, Y=0.45). Isothermal annealing caused increase of , L c in the films deposited with H- and Ar dilutions, while in the films prepared without dilution the behavior was more complex, depending on the substrates. Significant narrowing of the height distribution was observed in the films deposited with H dilution or without dilution

  3. AFM Morphology Study of Si1-Y GeY:H Films Deposited by LF PE CVD from Silane-Germane with Different

    Energy Technology Data Exchange (ETDEWEB)

    Sanchez, L; Kosarev, A

    2005-03-28

    The morphology of Si{sub 1-Y} Ge{sub Y}:H films in the range of Y=0.23 to 0.9 has been studied by AFM. The films were deposited by Low Frequency (LF) PE CVD at substrate temperature T{sub s}=300 C and discharge frequency f=110 kHz from silane+germane mixture with and without, Ar and H{sub 2} dilution. The films were deposited on silicon and glass substrates. AFM images were taken and analyzed for 2 x 2 mm{sup 2} area. All the images demonstrated ''grain'' like structure, which was characterized by the height distribution function F(H) average roughness , standard height deviation Rq, lateral correlation length L{sub c} area distribution function F(s), mean grain area , diameter distribution function F(d), and mean grain diameter . The roughness of the films monotonically increases with Y for all dilutions, but more significantly in the films deposited without dilution. L{sub c} continuously grows with Y in the films deposited without dilution, while more complex behavior L{sub c}(Y) is observed in the films deposited with H- or Ar dilution. The sharpness of F(H) characterized by curtosis {gamma} depends on dilution and the sharpest F(H) are for the films deposited with Ar ({gamma}=5.30,Y=0.23) and without dilution ({gamma}=4.3, Y=0.45). Isothermal annealing caused increase of , L{sub c} in the films deposited with H- and Ar dilutions, while in the films prepared without dilution the behavior was more complex, depending on the substrates. Significant narrowing of the height distribution was observed in the films deposited with H dilution or without dilution.

  4. Wear Mechanism of Chemical Vapor Deposition (CVD) Carbide Insert in Orthogonal Cutting Ti-6Al-4V ELI at High Cutting Speed

    International Nuclear Information System (INIS)

    Gusri, A. I.; Che Hassan, C. H.; Jaharah, A. G.

    2011-01-01

    The performance of Chemical Vapor Deposition (CVD) carbide insert with ISO designation of CCMT 12 04 04 LF, when turning titanium alloys was investigated. There were four layers of coating materials for this insert i.e.TiN-Al2O3-TiCN-TiN. The insert performance was evaluated based on the insert's edge resistant towards the machining parameters used at high cutting speed range of machining Ti-6Al-4V ELI. Detailed study on the wear mechanism at the cutting edge of CVD carbide tools was carried out at cutting speed of 55-95 m/min, feed rate of 0.15-0.35 mm/rev and depth of cut of 0.10-0.20 mm. Wear mechanisms such as abrasive and adhesive were observed on the flank face. Crater wear due to diffusion was also observed on the rake race. The abrasive wear occurred more at nose radius and the fracture on tool were found at the feed rate of 0.35 mm/rev and the depth of cut of 0.20 mm. The adhesion wear takes place after the removal of the coating or coating delaminating. Therefore, adhesion or welding of titanium alloy onto the flank and rake faces demonstrates a strong bond at the workpiece-tool interface.

  5. Deposition of low stress, high transmittance SiC as an x-ray mask membrane using ECR plasma CVD

    CERN Document Server

    Lee, S Y; Lim, S T; Ahn, J H

    1998-01-01

    SiC for x-ray mask membrane is deposited by Electron Cyclotron Resonance plasma Chemical Vapor Deposition from SiH sub 4 /CH sub 4 Ar mixtures. Stoichiometric SiC is deposited at SiH sub 4 /CH sub 4 ratio of 0.4, deposition temperature of 600.deg.C and microwave power of 500 W with +- 5% thickness uniformity, As-deposited film has compressive residual stress, very smooth surface (31 A rms) and high optical transmittance of 90% at 633 nm wavelength. The microstructure of this film consists of the nanocrystalline particle (100 A approx 200A) embedded in amorphous matrix. Residual stress can be turned to tensile stress via Rapid Thermal Annealing in N sub 2 atmosphere, while suppressing structural change during annealing, As a result, smooth (37 A rms) SiC film with moderate tensile stress and high optical transmittance (85% at 633 nm wavelength) is obtained.

  6. Comparative evaluation of CVD diamond technologies

    Energy Technology Data Exchange (ETDEWEB)

    Anthony, T.R. [General Electric Corporate Research & Development Center, Schenectady, NY (United States)

    1993-01-01

    Chemical vapor deposition (CVD) of diamonds occurs from hydrogen-hydrocarbon gas mixtures in the presence of atomic hydrogen at subatmospheric pressures. Most CVD methods are based on different means of generating and transporting atomic hydrogen in a particular system. Evaluation of these different techniques involves their capital costs, material costs, energy costs, labor costs and the type and quality of diamond that they produce. Currently, there is no universal agreement on which is the best technique and technique selection has been largely driven by the professional background of the user as well as the particular application of interest. This article discusses the criteria for evaluating a process for low-pressure deposition of diamond. Next, a brief history of low-pressure diamond synthesis is reviewed. Several specific processes are addressed, including the hot filament process, hot filament electron-assisted chemical vapor deposition, and plasma generation of atomic hydrogen by glow discharge, microwave discharge, low pressure radio frequency discharge, high pressure DC discharge, high pressure microwave discharge jets, high pressure RF discharge, and high and low pressure flames. Other types of diamond deposition methods are also evaluated. 101 refs., 15 figs.

  7. Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD)

    Energy Technology Data Exchange (ETDEWEB)

    Nogay, G. [Department of Physics, Middle East Technical University (METU), Ankara 06800 (Turkey); Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey); Saleh, Z.M., E-mail: zaki.saleh@aauj.edu [Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey); Department of Physics, Arab American University–Jenin (AAUJ), Jenin, Palestine (Country Unknown); Özkol, E. [Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey); Department of Chemical Engineering, Middle East Technical University (METU), Ankara 06800 (Turkey); Turan, R. [Department of Physics, Middle East Technical University (METU), Ankara 06800 (Turkey); Center of Solar Energy Research and Application (GÜNAM), Middle East Technical University (METU), Ankara 06800 (Turkey)

    2015-06-15

    Highlights: • Inductively-coupled plasma is used for nanostructured silicon at room temperature. • Low temperature deposition allows device processing on various substrates. • Deposition pressure is the most effective parameter in controlling nanostructure. • Films consist of quantum dots in a-Si matrix and exhibit columnar vertical growth. • Films are porous to oxygen infusion along columnar grain boundaries. - Abstract: Vertically-aligned nanostructured silicon films are deposited at room temperature on p-type silicon wafers and glass substrates by inductively-coupled, plasma-enhanced chemical vapor deposition (ICPCVD). The nanocrystalline phase is achieved by reducing pressure and increasing RF power. The crystalline volume fraction (X{sub c}) and the size of the nanocrystals increase with decreasing pressure at constant power. Columnar growth of nc-Si:H films is observed by high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM). The films exhibit cauliflower-like structures with high porosity that leads to slow but uniform oxidation after exposure to air at room temperature. Films deposited at low pressures exhibit photoluminescence (PL) signals that may be deconvoluted into three distinct Gaussian components: 760–810, 920–935, and 990–1000 nm attributable to the quantum confinement and interface defect states. Hydrogen dilution is manifested in significant enhancement of the PL, but it has little effect on the nanocrystal size and X{sub c}.

  8. Cuprous oxide thin films grown by hydrothermal electrochemical deposition technique

    International Nuclear Information System (INIS)

    Majumder, M.; Biswas, I.; Pujaru, S.; Chakraborty, A.K.

    2015-01-01

    Semiconducting cuprous oxide films were grown by a hydrothermal electro-deposition technique on metal (Cu) and glass (ITO) substrates between 60 °C and 100 °C. X-ray diffraction studies reveal the formation of cubic cuprous oxide films in different preferred orientations depending upon the deposition technique used. Film growth, uniformity, grain size, optical band gap and photoelectrochemical response were found to improve in the hydrothermal electrochemical deposition technique. - Highlights: • Cu 2 O thin films were grown on Cu and glass substrates. • Conventional and hydrothermal electrochemical deposition techniques were used. • Hydrothermal electrochemical growth showed improved morphology, thickness and optical band gap

  9. Organosilicon thin films deposited by plasma enhanced CVD:Thermal changes of chemical structure and mechanical properties

    Czech Academy of Sciences Publication Activity Database

    Zajíčková, L.; Buršíková, V.; Kučerová, Z.; Franclová, J.; Siahel, P.; Peřina, Vratislav; Macková, Anna

    2007-01-01

    Roč. 68, 5-6 (2007), s. 1255-1259 ISSN 0022-3697 R&D Projects: GA ČR GA202/07/1669 Institutional research plan: CEZ:AV0Z10480505 Keywords : hin films * organometallic compounds * plasma deposition Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.899, year: 2007

  10. Interlayer utilization (including metal borides) for subsequent deposition of NSD films via microwave plasma CVD on 316 and 440C stainless steels

    Science.gov (United States)

    Ballinger, Jared

    . Surface boriding was implemented using the novel method of microwave plasma CVD with a mixture of hydrogen and diborane gases. On 440C bearings, dual phase boride layers of Fe2B and FeB were formed which supported adhered nanostructured diamond films. Continuity of the films was not seamless with limited regions remaining uncoated potentially corresponding to delamination of the film as evidenced by the presence of tubular structures presumably composed of sp2 bonded carbon. Surface boriding of 316 stainless steel discs was conducted at various powers and pressures to achieve temperatures ranging from 550-800 °C. The substrate boriding temperature was found to substantially influence the resultant interlayer by altering the metal boride(s) present. The lowest temperatures produced an interlayer where CrB was the single detected phase, higher temperatures yielded the presence of only Fe2B, and a combination of the two phases resulted from an intermediate boriding temperature. Compared with the more common, commercialized boriding methods, this a profound result given the problems posed by the FeB phase in addition to other advantages offered by CVD processes and microwave generated plasmas in general. Indentation testing of the boride layers revealed excellent adhesion strength for all borided interlayers, and above all, no evidence of cracking was observed for a sole Fe2B phase. As with boriding of 440C bearings, subsequent diamond deposition was achieved on these interlayers with substantially improved adhesion strength relative to diamond coated TiN interlayers. Both XRD and Raman spectroscopy confirmed a nanostructured diamond film with interfacial chromium carbides responsible for enhanced adhesion strength. Interlayers consisting solely of Fe2B have displayed an ability to support fully continuous nanostructured diamond films, yet additional study is required for consistent reproduction. This is in good agreement with initial work on pack borided high alloy steels

  11. Structural Properties of Zn-ZnO Core-Shell Microspheres Grown by Hot-Filament CVD Technique

    Directory of Open Access Journals (Sweden)

    R. López

    2012-01-01

    Full Text Available We report the hot-filament chemical vapor deposition (HFCVD growth of Zn-ZnO core-shell microspheres in the temperature range of 350–650°C only using ZnO pellets as raw material. The samples were characterized by scanning electron microscope (SEM, energy dispersive spectroscopy (EDS, and X-ray diffraction (XRD techniques. SEM micrographs showed the presence of solid microspheres and a Zn-ZnO layer in all samples. The observed heterogeneous morphology on each sample suggested two different growth mechanisms. On the one hand, solid microspheres were formed by means of gas phase nucleation of Zn atoms. The Zn-ZnO layer was formed on the substrate as result of surface reactions. It is possible that Zn microspheres condensed during the natural cooling of the HFCVD reactor as they were observed on the Zn-ZnO layer.

  12. Graphene Synthesis by Plasma-Enhanced CVD Growth with Ethanol

    OpenAIRE

    Campo, T.; Cotto, M.; Márquez, F.; Elizalde, E.; Morant, C.

    2016-01-01

    A modified route to synthesize graphene flakes is proposed using the Chemical Vapor Deposition (CVD) technique, by using copper substrates as supports. The carbon source used was ethanol, the synthesis temperature was 950°C and the pressure was controlled along the whole process. In this CVD synthesis process the incorporation of the carbon source was produced at low pressure and 950°C inducing the appearance of a plasma blue flash inside the quartz tube. Apparently, the presence of this plas...

  13. Ion beam figuring of CVD silicon carbide mirrors

    Science.gov (United States)

    Gailly, P.; Collette, J.-P.; Fleury Frenette, K.; Jamar, C.

    2017-11-01

    Optical and structural elements made of silicon carbide are increasingly found in space instruments. Chemical vapor deposited silicon carbide (CVD-SiC) is used as a reflective coating on SiC optics in reason of its good behavior under polishing. The advantage of applying ion beam figuring (IBF) to CVD-SiC over other surface figure-improving techniques is discussed herein. The results of an IBF sequence performed at the Centre Spatial de Liège on a 100 mm CVD-SiC mirror are reported. The process allowed to reduce the mirror surface errors from 243 nm to 13 nm rms . Beside the surface figure, roughness is another critical feature to consider in order to preserve the optical quality of CVD-SiC . Thus, experiments focusing on the evolution of roughness were performed in various ion beam etching conditions. The roughness of samples etched at different depths down to 3 ≠m was determined with an optical profilometer. These measurements emphasize the importance of selecting the right combination of gas and beam energy to keep roughness at a low level. Kaufman-type ion sources are generally used to perform IBF but the performance of an end-Hall ion source in figuring CVD-SiC mirrors was also evaluated in this study. In order to do so, ion beam etching profiles obtained with the end-Hall source on CVD-SiC were measured and used as a basis for IBF simulations.

  14. CVD - main concepts, applications and restrictions

    International Nuclear Information System (INIS)

    Bliznakovska, B.; Milosevski, M.; Krawczynski, S.; Meixner, C.; Koetter, H.R.

    1993-01-01

    Despite of the fact that the existing literature covering the last two decades is plentiful with data related to CVD, this document is an attempt to provide to a reader a concise information about the nature of CVD technique at production of technologically important materials as well as to point at special references. The text is devided into three separate sections. The first section, The Main Features of CVD, is intended to give a complete comprehensive picture of the CVD technique through process description and characterization. The basic principles of thermodynamics, CVD chemical reactions classification, CVD chemical kinetics aspects and physics of CVD (with particular attention on the gas-flow phenomena) are included. As an additional aspect, in CVD unavoidable aspect however, the role of the coating/substrate compatibility on the overall process was outlined. The second section, CVD Equipment, concerns on the pecularities of the complete CVD unit pointing out the individual significances of the separate parts, i.e. pumping system, reactor chamber, control system. The aim of this section is to create to a reader a basic understanding of the arising problems but connected to be actual CVD performance. As a final goal of this review the reader's attention is turned upon the CVD applications for production of an up-to-date important class of coatings such as multilayer coatings. (orig.)

  15. Synthesis of carbon nanotubes using the cobalt nanocatalyst by thermal chemical vapor deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Madani, S.S. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Zare, K. [Department of Chemistry, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Department of Chemistry, Shahid Beheshti University, Tehran (Iran, Islamic Republic of); Ghoranneviss, M. [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of); Salar Elahi, A., E-mail: Salari_phy@yahoo.com [Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

    2015-11-05

    The three main synthesis methods of Carbon nanotubes (CNTs) are the arc discharge, the laser ablation and the chemical vapour deposition (CVD) with a special regard to the latter one. CNTs were produced on a silicon wafer by Thermal Chemical Vapor Deposition (TCVD) using acetylene as a carbon source, cobalt as a catalyst and ammonia as a reactive gas. The DC-sputtering system was used to prepare cobalt thin films on Si substrates. A series of experiments was carried out to investigate the effects of reaction temperature and deposition time on the synthesis of the nanotubes. The deposition time was selected as 15 and 25 min for all growth temperatures. Energy Dispersive X-ray (EDX) measurements were used to investigate the elemental composition of the Co nanocatalyst deposited on Si substrates. Atomic Force Microscopy (AFM) was used to characterize the surface topography of the Co nanocatalyst deposited on Si substrates. The as-grown CNTs were characterized under Field Emission Scanning Electron Microscopy (FESEM) to study the morphological properties of CNTs. Also, the grown CNTs have been investigated by High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. The results demonstrated that increasing the temperature leads to increasing the diameter of CNTs. The ideal reaction temperature was 850 °C and the deposition time was 15 min. - Graphical abstract: FESEM images of CNTs grown on the cobalt catalyst at growth temperatures of (a) 850 °C, (b) 900 °C, (c) 950 °C and (d) 1000 °C during the deposition time of 15 min. - Highlights: • Carbon nanotubes (CNTs) were produced on a silicon wafer by TCVD technique. • EDX and AFM were used to investigate the elemental composition and surface topography. • FESEM was used to study the morphological properties of CNTs. • The grown CNTs have been investigated by HRTEM and Raman spectroscopy.

  16. Molecular fouling resistance of zwitterionic and amphiphilic initiated chemically vapor-deposited (iCVD) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, R; Goktekin, E; Wang, MH; Gleason, KK

    2014-08-08

    Biofouling is a universal problem in various applications ranging from water purification to implantable biomedical devices. Recent advances in surface modification have created a rich library of antifouling surface chemistries, many of which can be categorized into one of the two groups: hydrophilic surfaces or amphiphilic surfaces. We report the straightforward preparation of antifouling thin film coatings in both categories via initiated chemical vapor deposition. A molecular force spectroscopy-based method is demonstrated as a rapid and quantitative assessment tool for comparing the differences in antifouling characteristics. The fouling propensity of single molecules, as opposed to bulk protein solution or bacterial culture, is assessed. This method allows for the interrogation of molecular interaction without the complication resulted from protein conformational change or micro-organism group interactions. The molecular interaction follows the same trend as bacterial adhesion results obtained previously, demonstrating that molecular force probe is a valid method for the quantification and mechanistic examination of fouling. In addition, the molecular force spectroscopy-based method is able to distinguish differences in antifouling capability that is not resolvable by traditional static protein adsorption tests. To lend further insight into the intrinsic fouling resistance of zwitterionic and amphiphilic surface chemistries, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, advancing and receding water contact angles, and atomic force microscopy are used to elucidate the film properties that are relevant to their antifouling capabilities.

  17. Synthesis of freestanding WS{sub 2} trees and fibers on Au by chemical vapor deposition (CVD)

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Subash; Jaisi, Balaram Paudel; Sharma, Kamal Prasad; Ibrahim Araby, Mona; Kalita, Golap; Tanemura, Masaki [Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya (Japan)

    2018-01-15

    In this work, we report the synthesis of two new forms of WS{sub 2} nanostructures - freestanding WS{sub 2} trees and fibers on Au by chemical vapor deposition. It is observed that dislocation-driven growth causes WS{sub 2} crystals to grow and merge in both vertical and horizontal directions to form the pyramidal tree. During the formation of WS{sub 2} fibers, the presence of two-step growth was demonstrated. It is observed that sulphurization of WO{sub 3} nanoparticle leads to formation of WS{sub 2} rod in the first stage, followed by second stage in which selective growth causes some WS{sub 2} layers grow faster compared to other ones leading to the formation of fibrous WS{sub 2} structure. Fibers synthesized by our reported method have highly exposed WS{sub 2} layers which can demonstrate interesting catalytic and edge related properties or can be functionalized for future applications. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Fabrication and evaluation of chemically vapor deposited tungsten heat pipe.

    Science.gov (United States)

    Bacigalupi, R. J.

    1972-01-01

    A network of lithium-filled tungsten heat pipes is being considered as a method of heat extraction from high temperature nuclear reactors. The need for material purity and shape versatility in these applications dictates the use of chemically vapor deposited (CVD) tungsten. Adaptability of CVD tungsten to complex heat pipe designs is shown. Deposition and welding techniques are described. Operation of two lithium-filled CVD tungsten heat pipes above 1800 K is discussed.

  19. Adhesion of non-selective CVD tungsten to silicon dioxide

    International Nuclear Information System (INIS)

    Woodruff, D.W.; Wilson, R.H.; Sanchez-Martinez, R.A.

    1986-01-01

    Adhesion of non-selective, CVD tungsten to silicon dioxide is a critical issue in the development of tungsten as a metalization for VLSI circuitry. Without special adhesion promoters, tungsten deposited from WF/sub 6/ and H/sub 2/ has typically failed a standard tape test over all types of silicon oxides and nitrides. The reasons for failure of thin films, and CVD tungsten in particular are explored along with standard techniques for improving adhesion of thin films. Experiments are reported which include a number of sputtered metals as adhesion promoters, as well as chemical and plasma treatment of the oxide surface. Sputtered molybdenum is clearly the superior adhesion promoting layer from these tests. Traditional adhesion layers such as chromium or titanium failed as adhesion layers for CVD tungsten possibly due to chemical reactions between the WF/sub 6/ and Cr or Ti

  20. Undoped CVD diamond films for electrochemical applications

    International Nuclear Information System (INIS)

    Mosinska, Lidia; Fabisiak, Kazimierz; Paprocki, Kazimierz; Kowalska, Magdalena; Popielarski, Pawel; Szybowicz, Miroslaw

    2013-01-01

    By using different deposition conditions, the CVD diamond films with different qualities and orientation were grown by the hot-filament CVD technique. The object of this article is to summarize and discuss relation between structural, physical and electrochemical properties of different diamond electrodes. The physical properties of the Hot Filament CVD microcrystalline diamond films are analyzed by scanning electron microscopy and Raman spectroscopy. In presented studies two different electrodes were used of the diamond grain sizes around 200 nm and 10 μm, as it was estimated from SEM picture. The diamond layers quality was checked on basis of FWHM (Full width at Half Maximum) of 1332 cm −1 diamond Raman peak. The ratio of sp 3 /sp 2 carbon bonds was determined by 1550 cm −1 G band and 1350 cm −1 D band in the Raman spectrum. The electrochemical properties were analyzed using (CV) cyclic voltammetry measurements in aqueous solutions. The sensitivity of undoped diamond electrodes depends strongly on diamond film quality and concentration of amorphous carbon phase in the diamond layer

  1. HfO2 as gate dielectric on Ge: Interfaces and deposition techniques

    International Nuclear Information System (INIS)

    Caymax, M.; Van Elshocht, S.; Houssa, M.; Delabie, A.; Conard, T.; Meuris, M.; Heyns, M.M.; Dimoulas, A.; Spiga, S.; Fanciulli, M.; Seo, J.W.; Goncharova, L.V.

    2006-01-01

    To fabricate MOS gate stacks on Ge, one can choose from a multitude of metal oxides as dielectric material which can be deposited by many chemical or physical vapor deposition techniques. As a few typical examples, we will discuss here the results from atomic layer deposition (ALD), metal organic CVD (MOCVD) and molecular beam deposition (MBD) using HfO 2 /Ge as materials model system. It appears that a completely interface layer free HfO 2 /Ge combination can be made in MBD, but this results in very bad capacitors. The same bad result we find if HfGe y (Hf germanides) are formed like in the case of MOCVD on HF-dipped Ge. A GeO x interfacial layer appears to be indispensable (if no other passivating materials are applied), but the composition of this interfacial layer (as determined by XPS, TOFSIMS and MEIS) is determining for the C/V quality. On the other hand, the presence of Ge in the HfO 2 layer is not the most important factor that can be responsible for poor C/V, although it can still induce bumps in C/V curves, especially in the form of germanates (Hf-O-Ge). We find that most of these interfacial GeO x layers are in fact sub-oxides, and that this could be (part of) the explanation for the high interfacial state densities. In conclusion, we find that the Ge surface preparation is determining for the gate stack quality, but it needs to be adapted to the specific deposition technique

  2. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    International Nuclear Information System (INIS)

    Aronne, Antonio; Bloisi, Francesco; Calabria, Raffaela; Califano, Valeria; Depero, Laura E.; Fanelli, Esther; Federici, Stefania; Massoli, Patrizio; Vicari, Luciano R.M.

    2015-01-01

    Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence

  3. Lipase biofilm deposited by Matrix Assisted Pulsed Laser Evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Aronne, Antonio [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Bloisi, Francesco, E-mail: bloisi@na.infn.it [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy); Calabria, Raffaela; Califano, Valeria [Istituto Motori – CNR, Naples (Italy); Depero, Laura E. [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Fanelli, Esther [Department of Chemical Engineering, Materials and Industrial Production, University of Naples “Federico II”, Napoli (Italy); Federici, Stefania [Department of Mechanical and Industrial Engineering, University of Brescia, Brescia (Italy); Massoli, Patrizio [Istituto Motori – CNR, Naples (Italy); Vicari, Luciano R.M. [SPIN – CNR, Naples (Italy); Department of Physics, University of Naples “Federico II”, Napoli (Italy)

    2015-05-01

    Highlights: • A lipase film was deposited with Matrix Assisted Pulsed Laser Evaporation technique. • FTIR spectra show that laser irradiation do not damage lipase molecule. • Laser fluence controls the characteristics of complex structure generated by MAPLE. - Abstract: Lipase is an enzyme that finds application in biodiesel production and for detection of esters and triglycerides in biosensors. Matrix Assisted Pulsed Laser Evaporation (MAPLE), a technique derived from Pulsed Laser Deposition (PLD) for deposition of undamaged biomolecules or polymers, is characterized by the use of a frozen target obtained from a solution/suspension of the guest material (to be deposited) in a volatile matrix (solvent). The presence of the solvent avoids or at least reduces the potential damage of guest molecules by laser radiation but only the guest material reaches the substrate in an essentially solvent-free deposition. MAPLE can be used for enzymes immobilization, essential for industrial application, allowing the development of continuous processes, an easier separation of products, the reuse of the catalyst and, in some cases, enhancing enzyme properties (pH, temperature stability, etc.) and catalytic activity in non-aqueous media. Here we show that MAPLE technique can be used to deposit undamaged lipase and that the complex structure (due to droplets generated during extraction from target) of the deposited material can be controlled by changing the laser beam fluence.

  4. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    Science.gov (United States)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  5. CVD diamond - fundamental phenomena

    Energy Technology Data Exchange (ETDEWEB)

    Yarbrough, W.A. [Pennsylvania State Univ., University Park (United States)

    1993-01-01

    This compilation of figures and diagrams addresses the basic physical processes involved in the chemical vapor deposition of diamond. Different methods of deposition are illustrated. For each method, observations are made of the prominent advantages and disadvantages of the technique. Chemical mechanisms of nucleation are introduced.

  6. CVD diamond windows for infrared synchrotron applications

    International Nuclear Information System (INIS)

    Sussmann, R.S.; Pickles, C.S.J.; Brandon, J.R.; Wort, C.J.H.; Coe, S.E.; Wasenczuk, A.; Dodge, C.N.; Beale, A.C.; Krehan, A.J.; Dore, P.; Nucara, A.; Calvani, P.

    1998-01-01

    This paper describes the attributes that make diamond a unique material for infrared synchrotron beam experiments. New developments in diamond synthesised by Chemical Vapour Deposition (CVD) promise to extend the range of applications which have been hitherto limited by the availability and cost of large-size single-crystal diamond. Polycrystalline CVD diamond components such as large (100 mm) diameter windows with extremely good transparency over a wide spectral range are now commercially available. Properties of CVD diamond of relevance to optical applications, such as mechanical strength, thermal conductivity and absolute bulk absorption, are discussed. It is shown that although some of the properties of CVD diamond (similar to other polycrystalline industrial ceramics) are affected by the grain structure, currently produced CVD diamond optical components have the quality and performance required for numerous demanding applications

  7. Effect of pulse biasing on the morphology of diamond films grown by hot filament CVD

    International Nuclear Information System (INIS)

    Beake, B.D.; Hussain, I.U.; Rego, C.; Ahmed, W.

    1999-01-01

    There has been considerable interest in the chemical vapour deposition (CVD) of diamond due to its unique mechanical, optical and electronic properties, which make it useful for many applications. For use in optical and electronic applications further developments in the CVD process are required to control the surface morphology and crystal size of the diamond films. These will require a detailed understanding of both the nucleation and growth processes that effect the properties. The technique of bias enhanced nucleation (BEN) of diamond offers better reproducibility than conventional pre-treatment methods such as mechanical abrasion. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) have been used study the surface modification of diamond films on silicon substrates during pulse biased growth in a hot filament CVD reactor. Pre-abraded silicon substrates were subjected to a three-step sequential growth process: (i) diamond deposition under standard CVD conditions, (ii) bias pre-treatment and (iii) deposition under standard conditions. The results show that the bias pre-treatment time is a critical parameter controlling the surface morphology and roughness of the diamond films deposited. Biasing reduces the surface roughness from 152 nm for standard CVD diamond to 68 nm for the 2.5 minutes pulse biased film. Further increase in the bias time results in an increase in surface roughness and crystallite size. (author)

  8. Obtention of thin depositions by the vacuum evaporation technique

    International Nuclear Information System (INIS)

    Gonzalez Mateu, D.; Labrada, A.; Voronin, A.

    1991-01-01

    The vacuum evaporating technique used to prepare thin depositions, and the technical characteristics of the constructed installation are described. 235 U y 238 U nuclear target for the fission researches were obtained. Aluminium and gold self-supporting foils were obtained too

  9. Thermionic vacuum arc (TVA) technique for magnesium thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Balbag, M.Z., E-mail: zbalbag@ogu.edu.t [Eskisehir Osmangazi University, Education Faculty, Primary Education, Meselik Campus, Eskisehir 26480 (Turkey); Pat, S.; Ozkan, M.; Ekem, N. [Eskisehir Osmangazi University, Art and Science Faculty, Physics Department, Eskisehir 26480 (Turkey); Musa, G. [Ovidius University, Physics Department, Constanta (Romania)

    2010-08-15

    In this study, magnesium thin films were deposited on glass substrate by the Thermionic Vacuum Arc (TVA) technique for the first time. We present a different technique for deposition of high-quality magnesium thin films. By means of this technique, the production of films is achieved by condensing the plasma of anode material generated using Thermionic Vacuum Arc (TVA) under high vacuum conditions onto the surface to be coated. The crystal orientation and morphology of the deposited films were investigated by using XRD, EDX, SEM and AFM. The aim of this study is to search the use of TVA technique to coat magnesium thin films and to determine some of the physical properties of the films generated. Furthermore, this study will contribute to the scientific studies which search the thin films of magnesium or the compounds containing magnesium. In future, this study will be preliminary work to entirely produce magnesium diboride (MgB{sub 2}) superconductor thin film with the TVA technique.

  10. Linear antenna microwave plasma CVD diamond deposition at the edge of no-growth region of C-H-O ternary diagram

    Czech Academy of Sciences Publication Activity Database

    Potocký, Štěpán; Babchenko, Oleg; Hruška, Karel; Kromka, Alexander

    2012-01-01

    Roč. 249, č. 12 (2012), s. 2612-2615 ISSN 0370-1972 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GAP205/12/0908 Institutional research plan: CEZ:AV0Z10100521 Keywords : C-H-O phase diagram * nanocrystalline diamond * plasma enhanced CVD * Raman spectroscopy * SEM Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.489, year: 2012

  11. CVD diamond detectors and dosimeters

    International Nuclear Information System (INIS)

    Manfredotti, C.; Fizzotti, F.; LoGiudice, A.; Paolini, C.; Oliviero, P.; Vittone, E.; Torino Univ., Torino

    2002-01-01

    Natural diamond, because of its well-known properties of tissue-equivalence, has recorded a wide spreading use in radiotherapy planning with electron linear accelerators. Artificial diamond dosimeters, as obtained by Chemical Vapour Deposition (CVD) could be capable to offer the same performances and they can be prepared in different volumes and shapes. The dosimeter sensitivity per unit volume may be easily proved to be better than standard ionization microchamber. We have prepared in our laboratory CVD diamond microchamber (diamond tips) in emispherical shape with an external diameter of 200 μm, which can be used both as X-ray beam profilometers and as microdosimeters for small field applications like stereotaxy and also for in vivo applications. These dosimeters, which are obtained on a wire substrate that could be either metallic or SiC or even graphite, display good performances also as ion or synchrotron X-rays detectors

  12. CVD mechanism of pyrolytic boron nitride

    International Nuclear Information System (INIS)

    Tanji, H.; Monden, K.; Ide, M.

    1987-01-01

    Pyrolytic boron nitride (P-BN) has become a essential material for III-V compound semiconductor manufacturing process. As the demand from electronics industry for larger single crystals increases, the demand for larger and more economical P-BN components is growing rapidly. P-BN is manufactured by low pressure CVD using boron-trihalides and ammonia as the reactants. In spite that P-BN has been in the market for quite a long time, limited number of fundamental studies regarding the kinetics and the formation mechanism of P-BN have been reported. As it has been demonstrated in CVD of Si, knowledge and both theoretical and empirical modeling of CVD process can be applied to improve the deposition technology and to give more uniform deposition with higher efficiency, and it should also apply to the deposition of P-BN

  13. Making Alloys (TI1 - xAlx N using plasma CVD technique from AlCl3 Powder, H2 and N2 Gas ,with solvent TiCl4

    Directory of Open Access Journals (Sweden)

    Keba Moto

    2010-10-01

    Full Text Available Normal 0 false false false IN X-NONE X-NONE /* Style Definitions */ table.MsoNormalTable {mso-style-name:"Table Normal"; mso-tstyle-rowband-size:0; mso-tstyle-colband-size:0; mso-style-noshow:yes; mso-style-priority:99; mso-style-parent:""; mso-padding-alt:0cm 5.4pt 0cm 5.4pt; mso-para-margin-top:0cm; mso-para-margin-right:0cm; mso-para-margin-bottom:10.0pt; mso-para-margin-left:0cm; line-height:115%; mso-pagination:widow-orphan; font-size:11.0pt; font-family:"Calibri","sans-serif"; mso-ascii-font-family:Calibri; mso-ascii-theme-font:minor-latin; mso-hansi-font-family:Calibri; mso-hansi-theme-font:minor-latin; mso-bidi-font-family:"Times New Roman"; mso-bidi-theme-font:minor-bidi; mso-fareast-language:EN-US;} The substitution of Ti atoms by Al atoms in TiN lattice sites to form (Ti1-xAlxN is clearly demonstrated by the coatings which were deposited on steel substrate and using plasma CVD technique. The presence of Al atoms in TiN lattice site is shown by means of XRD and EDX techniques: lattice parameters decreasing of TiN as the fraction of Al increases (XRD and precipitation of hexagonal AlN phase (XRD as the fraction of Al exceeding 0.8 (EDX. The hardness of these coating are just around 30 GPa, which is beyond the values reported in literatures.

  14. CVD diamond for nuclear detection applications

    CERN Document Server

    Bergonzo, P; Tromson, D; Mer, C; Guizard, B; Marshall, R D; Foulon, F

    2002-01-01

    Chemically vapour deposited (CVD) diamond is a remarkable material for the fabrication of radiation detectors. In fact, there exist several applications where other standard semiconductor detectors do not fulfil the specific requirements imposed by corrosive, hot and/or high radiation dose environments. The improvement of the electronic properties of CVD diamond has been under intensive investigations and led to the development of a few applications that are addressing specific industrial needs. Here, we report on CVD diamond-based detector developments and we describe how this material, even though of a polycrystalline nature, is readily of great interest for applications in the nuclear industry as well as for physics experiments. Improvements in the material synthesis as well as on device fabrication especially concern the synthesis of films that do not exhibit space charge build up effects which are often encountered in CVD diamond materials and that are highly detrimental for detection devices. On a pre-i...

  15. Nitrogen and hydrogen related infrared absorption in CVD diamond films

    Energy Technology Data Exchange (ETDEWEB)

    Titus, E. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal)]. E-mail: elby@mec.ua.pt; Ali, N. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal); Cabral, G. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal); Madaleno, J.C. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal); Neto, V.F. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal); Gracio, J. [Department of Mechanical Engineering, University of Aveiro, 3810-193 (Portugal); Ramesh Babu, P [Materials Ireland, Polymer research Centre, School of Physics, Dublin (Ireland); Sikder, A.K. [Department of Physics, Indian Institute of Technology (IIT), Bombay (India); Okpalugo, T.I. [Northern Ireland Bio-Engineering Centre, NIBEC, University of Ulster (United Kingdom); Misra, D.S. [Department of Physics, Indian Institute of Technology (IIT), Bombay (India)

    2006-09-25

    In this paper, we investigate on the presence of hydrogen and nitrogen related infrared absorptions in chemical vapour deposited (CVD) diamond films. Investigations were carried out in cross sections of diamond windows, deposited using hot filament CVD (HFCVD). The results of Scanning Electron Microscopy (SEM), Fourier Transform Infrared (FTIR) and Raman spectroscopy carried out in a cross section of self-standing diamond sheets are presented. The FTIR spectra showed several features that have not been reported before. In order to confirm the frequency of nitrogen related vibrations, ab-initio calculations were carried out using GAMESS program. The investigations showed the presence of several C-N related peaks in one-phonon (1000-1333 cm{sup -1}). The deconvolution of the spectra in the three-phonon region (2700-3150 cm{sup -1}) also showed a number of vibration modes corresponding to sp {sup m}CH {sub n} phase of carbon. Elastic recoil detection analysis (ERDA) was employed to compare the H content measured using FTIR technique. Using these measurements we point out that the oscillator strength of the different IR modes varies depending upon the structure and H content of CVD diamond sheets.

  16. Optical characterization of a-Si:H thin films grown by Hg-Photo-CVD

    International Nuclear Information System (INIS)

    Barhdadi, A.; Karbal, S.; M'Gafad, N.; Benmakhlouf, A.; Chafik El Idrissi, M.; Aka, B.M.

    2006-08-01

    Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides some experimental data resulting from the optical characterization of hydrogenated amorphous silicon thin films grown by this deposition technique. Experiments have been performed on both as-deposited layers and thermal annealed ones. (author) [fr

  17. Nucleation of microwave plasma CVD diamond on molybdenum (Mo) substrate

    International Nuclear Information System (INIS)

    Inderjeet, K.; Ramesh, S.

    2000-01-01

    Molybdenum is a metal, which is gaining increasing significance in industrial applications. The main use of Mo is as all alloying element added in small amounts to steel, irons and non- ferrous alloys in order to enhance the strength, toughness and wear resistance. Mo is also vastly being employed in the automotive and aircraft industries, mainly due to its low coefficient of friction. Diamond, on be other hand, is a unique material for innumerable applications because of its usual combination of physical and chemical properties. Several potential applications can be anticipated for diamond in many sectors including electronics, optics, as protective corrosion resistant coatings, cutting tools, etc. With the enhancement in science and technology, diamond microcrystals and thin films are now being produced from the vapour phase by a variety of chemical vapour deposition (CVD) techniques; such as microwave plasma CVD. With such technology being made available, it is envisage that diamond-coated molybdenum would further enhance the performance and to open up new avenue for Mo in various industries. Therefore, it is the aim of the present work to study the nucleation and growth of diamond particles on Mo surface by employing microwave plasma CVD (MAPCVD). In the present work, diamond deposition was carried out in several stages by varying the deposition distance. The nucleation and growth rate were studied using scanning electron microscopy (SEM). In addition, the existence of diamond was verified by X-ray diffraction (XRD) analysis. It has been found that the nucleation and growth rate of diamond particles were influenced by the deposition height between the substrate and plasma. Under the optimum condition, well defined diamond crystallites distributed homogeneously throughout the surface, could be obtained. Some of the important parameters controlling the deposition and growth of diamond particles on Mo surface are discussed. (author)

  18. Surface structuring of boron doped CVD diamond by micro electrical discharge machining

    Science.gov (United States)

    Schubert, A.; Berger, T.; Martin, A.; Hackert-Oschätzchen, M.; Treffkorn, N.; Kühn, R.

    2018-05-01

    Boron doped diamond materials, which are generated by Chemical Vapor Deposition (CVD), offer a great potential for the application on highly stressed tools, e. g. in cutting or forming processes. As a result of the CVD process rough surfaces arise, which require a finishing treatment in particular for the application in forming tools. Cutting techniques such as milling and grinding are hardly applicable for the finish machining because of the high strength of diamond. Due to its process principle of ablating material by melting and evaporating, Electrical Discharge Machining (EDM) is independent of hardness, brittleness or toughness of the workpiece material. EDM is a suitable technology for machining and structuring CVD diamond, since boron doped CVD diamond is electrically conductive. In this study the ablation characteristics of boron doped CVD diamond by micro electrical discharge machining are investigated. Experiments were carried out to investigate the influence of different process parameters on the machining result. The impact of tool-polarity, voltage and discharge energy on the resulting erosion geometry and the tool wear was analyzed. A variation in path overlapping during the erosion of planar areas leads to different microstructures. The results show that micro EDM is a suitable technology for finishing of boron doped CVD diamond.

  19. Fabrication of SERS Substrate by Multilayered Nanosphere Deposition Technique

    International Nuclear Information System (INIS)

    Fu, Chit Yaw; Dinish, U. S.; Praveen, Thoniyot; Koh, Zhen Yu; Kho, Khiang Wei; Malini, Olivo

    2010-01-01

    Metal film over nanosphere (MFON) has been employed as a reproducible and predictable SERS-active device in biosensing applications. In addition to its economic fabrication process, such substrate can be further processed to a prism-structure with increased SERS enhancement and wider Plasmon tunability. In this work, we investigate an alternative coating method to deposit a larger area of well-ordered PS beads with different sizes (oe = 100nm and 400 nm) onto a glass. The result suggests that the proposed well-coating technique can be suitably used to form closely-packed PS beads with diameter less than 100 nm for developing MFON substrates.

  20. CVD polycrystalline diamond. A novel neutron detector and applications

    International Nuclear Information System (INIS)

    Mongkolnavin, R.

    1998-01-01

    Chemical Vapour Deposition (CVD) Polycrystalline Diamond film has been investigated as a low noise sensor for beta particles, gammas and neutrons using High Energy Physics technologies. Its advantages and disadvantages have been explored in comparison with other particle detectors such as silicon detector and other plastic scintillators. The performance and characteristic of the diamond detector have been fully studied and discussed. These studies will lead to a better understanding of how CVD diamonds perform as a detector and how to improve their performance under various conditions. A CVD diamond detector model has been proposed which is an attempt to explain the behaviour of such an extreme detector material. A novel neutron detector is introduced as a result of these studies. A good thermal and fast neutron detector can be fabricated with CVD diamond with new topologies. This detector will perform well without degradation in a high neutron radiation environment, as diamond is known to be radiation hard. It also offers better neutrons and gammas discrimination for high gamma background applications compared to other semiconductor detectors. A full simulation of the detector has also been done using GEANT, a Monte-Carlo simulation program for particle detectors. Simulation results show that CVD diamond detectors with this novel topology can detect neutrons with great directionality. Experimental work has been done on this detector in a nuclear reactor environment and accelerator source. A novel neutron source which offers a fast pulse high-energy neutrons has also been studied. With this detector, applications in neutron spectrometer for low-Z material have been pursued with various neutron detection techniques. One of these is a low-Z material identification system. The system has been designed and simulated for contraband luggage interrogation using the detector and the novel neutron source. Also other neutron related applications have been suggested. (author)

  1. CVD polycrystalline diamond. A novel neutron detector and applications

    International Nuclear Information System (INIS)

    Mongkolnavin, R.

    1998-07-01

    Chemical Vapour Deposition (CVD) Polycrystalline Diamond film has been investigated as a low noise sensor for beta particles, gammas and neutrons using High Energy Physics technologies. Its advantages and disadvantages have been explored in comparison with other particle detectors such as silicon detector and other plastic scintillators. The performance and characteristic of the diamond detector have been fully studied and discussed. These studies will lead to a better understanding of how CVD diamonds perform as a detector and how to improve their performance under various conditions. A CVD diamond detector model has been proposed which is an attempt to explain the behaviour of such an extreme detector material. A novel neutron detector is introduced as a result of these studies. A good thermal and fast neutron detector can be fabricated with CVD diamond with new topologies. This detector will perform well without degradation in a high neutron radiation environment, as diamond is known to be radiation-hard. It also offers better neutrons and gammas discrimination for high gamma background applications compared to other semiconductor detectors. A full simulation of the detector has also been done using GEANT, a Monte Carlo simulation program for particle detectors. Simulation results show that CVD diamond detectors with this novel topology can detect neutrons with great directionality. Experimental work has been done on this detector in a nuclear reactor environment and accelerator source. A novel neutron source which offers a fast pulse high-energy neutrons has also been studied. With this detector, applications in neutron spectrometry for low-Z material have been pursued with various neutron detection techniques. One of these is a low-Z material identification system. The system has been designed and simulated for contraband luggage interrogation using the detector and the novel neutron source. (author)

  2. TPR system: a powerful technique to monitor carbon nanotube formation during chemical vapour deposition

    International Nuclear Information System (INIS)

    Tristao, Juliana Cristina; Moura, Flavia Cristina Camilo; Lago, Rochel Montero; Sapag, Karim

    2010-01-01

    In this work, a TPR (Temperature Programmed Reduction) system is used as a powerful tool to monitor carbon nanotubes production during CVD (Chemical Vapour Deposition), The experiments were carried out using catalyst precursors based on Fe-Mo supported on Al 2 O 3 and methane as carbon source. As methane reacts on the Fe metal surface, carbon is deposited and H2 is produced. TPR is very sensitive to the presence of H2 and affords information on the temperature where catalyst is active to form different forms of carbon, the reaction kinetics, the catalyst deactivation and carbon yields. (author)

  3. Geochemical Exploration Techniques Applicable in the Search for Copper Deposits

    Science.gov (United States)

    Chaffee, Maurice A.

    1975-01-01

    Geochemical exploration is an important part of copper-resource evaluation. A large number of geochemical exploration techniques, both proved and untried, are available to the geochemist to use in the search for new copper deposits. Analyses of whole-rock samples have been used in both regional and local geochemical exploration surveys in the search for copper. Analyses of mineral separates, such as biotite, magnetite, and sulfides, have also been used. Analyses of soil samples are widely used in geochemical exploration, especially for localized surveys. It is important to distinguish between residual and transported soil types. Orientation studies should always be conducted prior to a geochemical investigation in a given area in order to determine the best soil horizon and the best size of soil material for sampling in that area. Silty frost boils, caliche, and desert varnish are specialized types of soil samples that might be useful sampling media. Soil gas is a new and potentially valuable geochemical sampling medium, especially in exploring for buried mineral deposits in arid regions. Gaseous products in samples of soil may be related to base-metal deposits and include mercury vapor, sulfur dioxide, hydrogen sulfide, carbon oxysulfide, carbon dioxide, hydrogen, oxygen, nitrogen, the noble gases, the halogens, and many hydrocarbon compounds. Transported materials that have been used in geochemical sampling programs include glacial float boulders, glacial till, esker gravels, stream sediments, stream-sediment concentrates, and lake sediments. Stream-sediment sampling is probably the most widely used and most successful geochemical exploration technique. Hydrogeochemical exploration programs have utilized hot- and cold-spring waters and their precipitates as well as waters from lakes, streams, and wells. Organic gel found in lakes and at stream mouths is an unproved sampling medium. Suspended material and dissolved gases in any type of water may also be useful

  4. Investigation of CVD graphene topography and surface electrical properties

    International Nuclear Information System (INIS)

    Wang, Rui; Pearce, Ruth; Gallop, John; Patel, Trupti; Pollard, Andrew; Hao, Ling; Zhao, Fang; Jackman, Richard; Klein, Norbert; Zurutuza, Amaia

    2016-01-01

    Combining scanning probe microscopy techniques to characterize samples of graphene, a selfsupporting, single atomic layer hexagonal lattice of carbon atoms, provides far more information than a single technique can. Here we focus on graphene grown by chemical vapour deposition (CVD), grown by passing carbon containing gas over heated copper, which catalyses single atomic layer growth of graphene on its surface. To be useful for applications the graphene must be transferred onto other substrates. Following transfer it is important to characterize the CVD graphene. We combine atomic force microscopy (AFM) and scanning Kelvin probe microscopy (SKPM) to reveal several properties of the transferred film. AFM alone provides topographic information, showing ‘wrinkles’ where the transfer provided incomplete substrate attachment. SKPM measures the surface potential indicating regions with different electronic properties for example graphene layer number. By combining AFM and SKPM local defects and impurities can also be observed. Finally, Raman spectroscopy can confirm the structural properties of the graphene films, such as the number of layers and level of disorder, by observing the peaks present. We report example data on a number of CVD samples from different sources. (paper)

  5. FY1995 development of a clean CVD process by evaluation and control of gas phase nucleation phenomena; 1995 nendo kisokaku seisei gensho no hyoka to seigyo ni yoru clean CVD process no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    The purpose of this study is to develop a high-rate and clean chemical vapor deposition (CVD) process as a breakthrough technique to overcome the problems that particles generated in the gas phase during CVD process for preparation of functional thin films cause reduced product yield and deterioration of the films. In the CVD process proposed here, reactant gas and generated particles are electrically charged to control the motion of them with an electric field. In this study, gas-phase nucleation phenomena are evaluated both theoretically and experimentally. A high-rate, ionized CVD method is first developed, in which reactant gas and generated particles are charged with negative ions generated from a radioisotope source and the UV/photoelectron method, and the motion of the charged gas and particles is controlled with an electric field. Charging and transport processes of fine particles are then investigated experimentally and theoretically to develop a clean CVD method in which generated particles are removed with the electric forces. As a result, quantitative evaluation of the charging and transport process was made possible. We also developed devices for measuring the size distribution and concentration of fine particles in low pressure gas such as those found in plasma CVD processes. In addition, numerical simulation and experiments in this study for a TEOS/O{sub 3} CVD process to prepare thin films could determine reaction rates which have not been known so far and give information on selecting good operation conditions for the process. (NEDO)

  6. CVD diamond for nuclear detection applications

    International Nuclear Information System (INIS)

    Bergonzo, P.; Brambilla, A.; Tromson, D.; Mer, C.; Guizard, B.; Marshall, R.D.; Foulon, F.

    2002-01-01

    Chemically vapour deposited (CVD) diamond is a remarkable material for the fabrication of radiation detectors. In fact, there exist several applications where other standard semiconductor detectors do not fulfil the specific requirements imposed by corrosive, hot and/or high radiation dose environments. The improvement of the electronic properties of CVD diamond has been under intensive investigations and led to the development of a few applications that are addressing specific industrial needs. Here, we report on CVD diamond-based detector developments and we describe how this material, even though of a polycrystalline nature, is readily of great interest for applications in the nuclear industry as well as for physics experiments. Improvements in the material synthesis as well as on device fabrication especially concern the synthesis of films that do not exhibit space charge build up effects which are often encountered in CVD diamond materials and that are highly detrimental for detection devices. On a pre-industrial basis, CVD diamond detectors have been fabricated for nuclear industry applications in hostile environments. Such devices can operate in harsh environments and overcome limitations encountered with the standard semiconductor materials. Of these, this paper presents devices for the monitoring of the alpha activity in corrosive nuclear waste solutions, such as those encountered in nuclear fuel assembly reprocessing facilities, as well as diamond-based thermal neutron detectors exhibiting a high neutron to gamma selectivity. All these demonstrate the effectiveness of a demanding industrial need that relies on the remarkable resilience of CVD diamond

  7. Micro-strip sensors based on CVD diamond

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D. E-mail: dirk.meier@cern.ch; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M

    2000-10-11

    In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

  8. Micro-strip sensors based on CVD Diamond

    CERN Document Server

    Adam, W; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Krammer, Manfred; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Perera, L P; Pirollo, S; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S R; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Wetstein, M; White, C; Zeuner, W; Zoeller, M M

    2000-01-01

    In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

  9. Micro-strip sensors based on CVD diamond

    International Nuclear Information System (INIS)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J.L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.

    2000-01-01

    In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation

  10. Micro-strip sensors based on CVD diamond

    Science.gov (United States)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; RD42 Collaboration

    2000-10-01

    In this article we present the performance of recent chemical vapour deposition (CVD) diamond micro-strip sensors in beam tests. In addition, we present the first comparison of a CVD diamond micro-strip sensor before and after proton irradiation.

  11. Contribution to understanding and controlling a-Si:H thin films growth by mercury-sensitised photo-CVD

    International Nuclear Information System (INIS)

    Barhdadi, A.

    2003-09-01

    Mercury-sensitized photo-CVD technique is widely used for growing amorphous silicon thin films. This attractive method allows damage-free thin film depositions at very low substrate temperatures without the deleterious effects of the other processes. This review reports on the principle and potential of this technique. It also recalls and summarizes some fundamental issues such as experimental systems or apparatus particularities, the analysis of gas-phase reactions in the reactor, the surface-reaction model of SiH 3 and H during the film growth and all the kinetic model for lamp-induced Photo-CVD. (author)

  12. New developments in CVD diamond for detector applications

    Science.gov (United States)

    Adam, W.; Berdermann, E.; Bergonzo, P.; de Boer, W.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Dulinski, W.; Doroshenko, J.; van Eijk, B.; Fallou, A.; Fischer, P.; Fizzotti, F.; Furetta, C.; Gan, K. K.; Ghodbane, N.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Keil, M.; Knoepfle, K. T.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pernicka, M.; Perera, L.; Potenza, R.; Riester, J. L.; Roe, S.; Rudge, A.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Sutera, C.; Trischuk, W.; Tromson, D.; Tuve, C.; Vincenzo, B.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

    Chemical Vapor Deposition (CVD) diamond has been discussed extensively as an alternative sensor material for use very close to the interaction region of the LHC and other machines where extreme radiation conditions exist. During the last seven years the RD42 collaboration has developed diamond detectors and tested them with LHC electronics towards the end of creating a device usable by experiments. The most recent results of this work are presented. Recently, a new form of CVD diamond has been developed: single crystal CVD diamond which resolves many of the issues associated with poly-crystalline CVD material. The first tests of this material are also presented.

  13. New developments in CVD diamond for detector applications

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W. [HEPHY, Vienna (Austria); Berdermann, E. [GSI, Darmstadt (Germany); Bergonzo, P.; Brambilla, A. [LETI/DEIN/SPE/CEA Saclay (France); Boer, W. de [Universitaet Karlsruhe, Karlsruhe (Germany); Bogani, F. [LENS, Florence (Italy); Borchi, E.; Bruzzi, M. [University of Florence (Italy); Colledani, C.; Dulinski, W. [LEPSI, IN2P3/CNRS-ULP, Strasbourg (France); Conway, J.; Doroshenko, J. [Rutgers University, Piscataway (United States); D' Angelo, P.; Furetta, C. [INFN, Milano (Italy); Dabrowski, W. [UMM, Cracow (Poland); Delpierre, P.; Fallou, A. [CPPM, Marseille (France); Eijk, B. van [NIKHEF, Amsterdam (Netherlands); Fischer, P. [Universitaet Bonn, Bonn (Germany); Fizzotti, F. [University of Torino (Italy); Gan, K.K.; Ghodbane, N.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Keil, M.; Knoepfle, K.T.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pernicka, M.; Perera, L.; Potenza, R.; Riester, J.L.; Roe, S.; Rudge, A.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Sutera, C.; Trischuk, W.; Tromson, D.; Tuve, C.; Vincenzo, B.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

    2004-07-01

    Chemical Vapor Deposition (CVD) diamond has been discussed extensively as an alternative sensor material for use very close to the interaction region of the LHC and other machines where extreme radiation conditions exist. During the last seven years the RD42 collaboration has developed diamond detectors and tested them with LHC electronics towards the end of creating a device usable by experiments. The most recent results of this work are presented. Recently, a new form of CVD diamond has been developed: single crystal CVD diamond which resolves many of the issues associated with poly-crystalline CVD material. The first tests of this material are also presented. (orig.)

  14. New developments in CVD diamond for detector applications

    International Nuclear Information System (INIS)

    Adam, W.; Berdermann, E.; Bergonzo, P.; Brambilla, A.; Boer, W. de; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Dulinski, W.; Conway, J.; Doroshenko, J.; D'Angelo, P.; Furetta, C.; Dabrowski, W.; Delpierre, P.; Fallou, A.; Eijk, B. van; Fischer, P.; Fizzotti, F.; Gan, K.K.; Ghodbane, N.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Keil, M.; Knoepfle, K.T.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pernicka, M.; Perera, L.; Potenza, R.; Riester, J.L.; Roe, S.; Rudge, A.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Sutera, C.; Trischuk, W.; Tromson, D.; Tuve, C.; Vincenzo, B.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

    2004-01-01

    Chemical Vapor Deposition (CVD) diamond has been discussed extensively as an alternative sensor material for use very close to the interaction region of the LHC and other machines where extreme radiation conditions exist. During the last seven years the RD42 collaboration has developed diamond detectors and tested them with LHC electronics towards the end of creating a device usable by experiments. The most recent results of this work are presented. Recently, a new form of CVD diamond has been developed: single crystal CVD diamond which resolves many of the issues associated with poly-crystalline CVD material. The first tests of this material are also presented. (orig.)

  15. CVD diamonds as thermoluminescent detectors for medical applications

    International Nuclear Information System (INIS)

    Marczewska, B.; Olko, P.; Nesladek, M.; Waligorski, M.P.R.; Kerremans, Y.

    2002-01-01

    Diamond is believed to be a promising material for medical dosimetry due to its tissue equivalence, mechanical and radiation hardness, and lack of solubility in water or in disinfecting agents. A number of diamond samples, obtained under different growth conditions at Limburg University, using the chemical vapour deposition (CVD) technique, was tested as thermoluminescence dosemeters. Their TL glow curve, TL response after doses of gamma rays, fading, and so on were studied at dose levels and for radiation modalities typical for radiotherapy. The investigated CVD diamonds displayed sensitivity comparable with that of MTS-N (Li:Mg,Ti) detectors, signal stability (reproducibility after several readouts) below 10% (1 SD) and no fading was found four days after irradiation. A dedicated CVD diamond plate was grown, cut into 20 detector chips (3x3x0.5 mm) and used for measuring the dose-depth distribution at different depths in a water phantom, for 60 Co and six MV X ray radiotherapy beams. Due to the sensitivity of diamond to ambient light, it was difficult to achieve reproducibility comparable with that of standard LiF detectors. (author)

  16. An assessment of radiotherapy dosimeters based on CVD grown diamond

    International Nuclear Information System (INIS)

    Ramkumar, S.; Buttar, C.M.; Conway, J.; Whitehead, A.J.; Sussman, R.S.; Hill, G.; Walker, S.

    2001-01-01

    Diamond is potentially a very suitable material for use as a dosimeter for radiotherapy. Its radiation hardness, the near tissue equivalence and chemical inertness are some of the characteristics of diamond, which make it well suited for its application as a dosimeter. Recent advances in the synthesis of diamond by chemical vapour deposition (CVD) technology have resulted in the improvement in the quality of material and increased its suitability for radiotherapy applications. We report in this paper, the response of prototype dosimeters based on two different types (CVD1 and CVD2) of CVD diamond to X-rays. The diamond devices were assessed for sensitivity, dependence of response on dose and dose rate, and compared with a Scanditronix silicon photon diode and a PTW natural diamond dosimeter. The diamond devices of CVD1 type showed an initial increase in response with dose, which saturates after ∼6 Gy. The diamond devices of CVD2 type had a response at low fields ( 1162.8 V/cm), the CVD2-type devices showed polarisation and dose-rate dependence. The sensitivity of the CVD diamond devices varied between 82 and 1300 nC/Gy depending upon the sample type and the applied voltage. The sensitivity of CVD diamond devices was significantly higher than that of natural diamond and silicon dosimeters. The results suggest that CVD diamond devices can be fabricated for successful use in radiotherapy applications

  17. Future prospect of remote Cat-CVD on the basis of the production, transportation and detection of H atoms

    International Nuclear Information System (INIS)

    Umemoto, Hironobu; Matsumura, Hideki

    2008-01-01

    The future prospect of remote Cat-CVD, in which the decomposition and the deposition chambers are separated, is discussed on the basis of the absolute density measurements of H atoms. It is now well recognized that uniform deposition is possible on a large area without plasma damages by Cat-CVD. However, we may not overlook the demerits in Cat-CVD. One of the demerits is the poisoning of the catalyzer surfaces by the material gases, both temporary and permanent. One technique to overcome this problem is remote Cat-CVD. The question is how to separate the decomposition and deposition areas. If the separation is not enough, there should be back diffusion of the material gases, which will poison the catalyzers. If the separation is too tight, radicals may not effuse out from the decomposition chamber. These problems are discussed and it is shown that SiO 2 coating to reduce the radical recombination rates on walls is promising. The possibility of the polytetrafluoroethene coating by Cat-CVD is also discussed

  18. Nanocrystalline sp{sup 2} and sp{sup 3} carbons: CVD synthesis and applications

    Energy Technology Data Exchange (ETDEWEB)

    Terranova, M. L. [Università degli Studi di Roma “Tor Vergata,” via Della Ricerca Scientifica, Dipartimento di Scienze e Tecnologie Chimiche—MinimaLab (Italy); Rossi, M. [Università degli Studi di Roma “Sapienza,” via A. Scarpa, Dipartimento di Scienze di Base e Applicate per l’Ingegneria and Centro di Ricerca per le Nanotecnologie Applicate all’Ingegneria (CNIS) (Italy); Tamburri, E., E-mail: emanuela.tamburri@uniroma2.it [Università degli Studi di Roma “Tor Vergata,” via Della Ricerca Scientifica, Dipartimento di Scienze e Tecnologie Chimiche—MinimaLab (Italy)

    2016-11-15

    The design and production of innovative materials based on nanocrystalline sp{sup 2}- and sp{sup 3}-coordinated carbons is presently a focus of the scientific community. We present a review of the nanostructures obtained in our labs using a series of synthetic routes, which make use of chemical vapor deposition (CVD) techniques for the selective production of non-planar graphitic nanostructures, nanocrystalline diamonds, and hybrid two-phase nanostructures.

  19. Use of Kelvin probe force microscopy for identification of CVD grown graphene flakes on copper foil

    Science.gov (United States)

    Kumar, Rakesh; Mehta, B. R.; Kanjilal, D.

    2017-05-01

    Graphene flakes have been grown by chemical vapour deposition (CVD) method on Cu foils. The obtained graphene flakes have been characterized by optical microscopy, field emission scanning electron microscopy, Kelvin probe force microscopy (KPFM) and Raman spectroscopy. The graphene flakes grown on Cu foil comprise mainly single layer graphene and confirm that the nucleation for graphene growth starts very quickly. Moreover, KPFM has been found to be a valuable technique to differentiate between covered and uncovered portion of Cu foil by graphene flakes deposited for shorter duration. The results show that KPFM can be a very useful technique in understanding the mechanism of graphene growth.

  20. Structural and electrical characterization of diamond films deposited in nitrogen/oxygen containing gas mixture by linear antenna microwave CVD process

    Czech Academy of Sciences Publication Activity Database

    Vojs, Marian; Varga, Marián; Babchenko, Oleg; Ižák, Tibor; Mikolášek, M.; Marton, M.; Kromka, Alexander

    2014-01-01

    Roč. 312, SEP (2014), s. 226-230 ISSN 0169-4332 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : pulsed linear antenna microwave chemical vapor deposition * nanocrystalline diamond * Raman spectroscopy * admittance spectroscopy * n-type conductive NCD Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.711, year: 2014

  1. Electrochemically assisted deposition of hydroxyapatite on Ti6Al4V substrates covered by CVD diamond films - Coating characterization and first cell biological results.

    Science.gov (United States)

    Strąkowska, Paulina; Beutner, René; Gnyba, Marcin; Zielinski, Andrzej; Scharnweber, Dieter

    2016-02-01

    Although titanium and its alloys are widely used as implant material for orthopedic and dental applications they show only limited corrosion stability and osseointegration in different cases. The aim of the presented research was to develop and characterize a novel surface modification system from a thin diamond base layer and a hydroxyapatite (HAp) top coating deposited on the alloy Ti6Al4V widely used for implants in contact with bone. This coating system is expected to improve both the long-term corrosion behavior and the biocompatibility and bioactivity of respective surfaces. The diamond base films were obtained by Microwave Plasma Assisted Chemical Vapor Deposition (MW-PACVD); the HAp coatings were formed in aqueous solutions by electrochemically assisted deposition (ECAD) at varying polarization parameters. Scanning electron microscopy (SEM), Raman microscopy, and electrical conductivity measurements were applied to characterize the generated surface states; the calcium phosphate coatings were additionally chemically analyzed for their composition. The biological properties of the coating system were assessed using hMSC cells analyzing for cell adhesion, proliferation, and osteogenic differentiation. Varying MW-PACVD process conditions resulted in composite coatings containing microcrystalline diamond (MCD/Ti-C), nanocrystalline diamond (NCD), and boron-doped nanocrystalline diamond (B-NCD) with the NCD coatings being dense and homogeneous and the B-NCD coatings showing increased electrical conductivity. The ECAD process resulted in calcium phosphate coatings from stoichiometric and non-stoichiometric HAp. The deposition of HAp on the B-NCD films run at lower cathodic potentials and resulted both in the highest coating mass and the most homogenous appearance. Initial cell biological investigations showed an improved cell adhesion in the order B-NCD>HAp/B-NCD>uncoated substrate. Cell proliferation was improved for both investigated coatings whereas ALP

  2. Electrochemically assisted deposition of hydroxyapatite on Ti6Al4V substrates covered by CVD diamond films — Coating characterization and first cell biological results

    Energy Technology Data Exchange (ETDEWEB)

    Strąkowska, Paulina [Gdańsk University of Technology, Mechanical Engineering Faculty (Poland); Gdańsk University of Technology, Faculty of Electronics, Telecommunications, and Informatics (Poland); Beutner, René [Max Bergmann Center, Technische Universität Dresden (Germany); Gnyba, Marcin [Gdańsk University of Technology, Faculty of Electronics, Telecommunications, and Informatics (Poland); Zielinski, Andrzej [Gdańsk University of Technology, Mechanical Engineering Faculty (Poland); Scharnweber, Dieter, E-mail: Dieter.Scharnweber@tu-dresden.de [Max Bergmann Center, Technische Universität Dresden (Germany)

    2016-02-01

    Although titanium and its alloys are widely used as implant material for orthopedic and dental applications they show only limited corrosion stability and osseointegration in different cases. The aim of the presented research was to develop and characterize a novel surface modification system from a thin diamond base layer and a hydroxyapatite (HAp) top coating deposited on the alloy Ti6Al4V widely used for implants in contact with bone. This coating system is expected to improve both the long-term corrosion behavior and the biocompatibility and bioactivity of respective surfaces. The diamond base films were obtained by Microwave Plasma Assisted Chemical Vapor Deposition (MW-PACVD); the HAp coatings were formed in aqueous solutions by electrochemically assisted deposition (ECAD) at varying polarization parameters. Scanning electron microscopy (SEM), Raman microscopy, and electrical conductivity measurements were applied to characterize the generated surface states; the calcium phosphate coatings were additionally chemically analyzed for their composition. The biological properties of the coating system were assessed using hMSC cells analyzing for cell adhesion, proliferation, and osteogenic differentiation. Varying MW-PACVD process conditions resulted in composite coatings containing microcrystalline diamond (MCD/Ti-C), nanocrystalline diamond (NCD), and boron-doped nanocrystalline diamond (B-NCD) with the NCD coatings being dense and homogeneous and the B-NCD coatings showing increased electrical conductivity. The ECAD process resulted in calcium phosphate coatings from stoichiometric and non-stoichiometric HAp. The deposition of HAp on the B-NCD films run at lower cathodic potentials and resulted both in the highest coating mass and the most homogenous appearance. Initial cell biological investigations showed an improved cell adhesion in the order B-NCD > HAp/B-NCD > uncoated substrate. Cell proliferation was improved for both investigated coatings whereas ALP

  3. Electrochemically assisted deposition of hydroxyapatite on Ti6Al4V substrates covered by CVD diamond films — Coating characterization and first cell biological results

    International Nuclear Information System (INIS)

    Strąkowska, Paulina; Beutner, René; Gnyba, Marcin; Zielinski, Andrzej; Scharnweber, Dieter

    2016-01-01

    Although titanium and its alloys are widely used as implant material for orthopedic and dental applications they show only limited corrosion stability and osseointegration in different cases. The aim of the presented research was to develop and characterize a novel surface modification system from a thin diamond base layer and a hydroxyapatite (HAp) top coating deposited on the alloy Ti6Al4V widely used for implants in contact with bone. This coating system is expected to improve both the long-term corrosion behavior and the biocompatibility and bioactivity of respective surfaces. The diamond base films were obtained by Microwave Plasma Assisted Chemical Vapor Deposition (MW-PACVD); the HAp coatings were formed in aqueous solutions by electrochemically assisted deposition (ECAD) at varying polarization parameters. Scanning electron microscopy (SEM), Raman microscopy, and electrical conductivity measurements were applied to characterize the generated surface states; the calcium phosphate coatings were additionally chemically analyzed for their composition. The biological properties of the coating system were assessed using hMSC cells analyzing for cell adhesion, proliferation, and osteogenic differentiation. Varying MW-PACVD process conditions resulted in composite coatings containing microcrystalline diamond (MCD/Ti-C), nanocrystalline diamond (NCD), and boron-doped nanocrystalline diamond (B-NCD) with the NCD coatings being dense and homogeneous and the B-NCD coatings showing increased electrical conductivity. The ECAD process resulted in calcium phosphate coatings from stoichiometric and non-stoichiometric HAp. The deposition of HAp on the B-NCD films run at lower cathodic potentials and resulted both in the highest coating mass and the most homogenous appearance. Initial cell biological investigations showed an improved cell adhesion in the order B-NCD > HAp/B-NCD > uncoated substrate. Cell proliferation was improved for both investigated coatings whereas ALP

  4. Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques.

    Science.gov (United States)

    Hemasiri, Bastian Waduge Naveen Harindu; Kim, Jae-Kwan; Lee, Ji-Myon

    2017-12-19

    Indium tin oxide (ITO) still remains as the main candidate for high-performance optoelectronic devices, but there is a vital requirement in the development of sol-gel based synthesizing techniques with regards to green environment and higher conductivity. Graphene/ITO transparent bi-film was synthesized by a two-step process: 10 wt. % tin-doped ITO thin films were produced by an environmentally friendly aqueous sol-gel spin coating technique with economical salts of In(NO 3 ) 3 .H 2 O and SnCl 4 , without using organic additives, on surface free energy enhanced (from 53.826 to 97.698 mJm -2 ) glass substrate by oxygen plasma treatment, which facilitated void-free continuous ITO film due to high surface wetting. The chemical vapor deposited monolayer graphene was transferred onto the synthesized ITO to enhance its electrical properties and it was capable of reducing sheet resistance over 12% while preserving the bi-film surface smoother. The ITO films contain the In 2 O 3 phase only and exhibit the polycrystalline nature of cubic structure with 14.35 ± 0.5 nm crystallite size. The graphene/ITO bi-film exhibits reproducible optical transparency with 88.66% transmittance at 550 nm wavelength, and electrical conductivity with sheet resistance of 117 Ω/sq which is much lower than that of individual sol-gel derived ITO film.

  5. Modelling and analysis of CVD processes for ceramic membrane preparation

    NARCIS (Netherlands)

    Brinkman, H.W.; Cao, G.Z.; Meijerink, J.; de Vries, Karel Jan; Burggraaf, Anthonie

    1993-01-01

    A mathematical model is presented that describes the modified chemical vapour deposition (CVD) process (which takes place in advance of the electrochemical vapour deposition (EVD) process) to deposit ZrO2 inside porous media for the preparation and modification of ceramic membranes. The isobaric

  6. Chemical Vapour Deposition of Large Area Graphene

    DEFF Research Database (Denmark)

    Larsen, Martin Benjamin Barbour Spanget

    Chemical Vapor Deposition (CVD) is a viable technique for fabrication of large areas of graphene. CVD fabrication is the most prominent and common way of fabricating graphene in industry. In this thesis I have attempted to optimize a growth recipe and catalyst layer for CVD fabrication of uniform......, single layer, and high carrier mobility large area graphene. The main goals of this work are; (1) explore the graphene growth mechanics in a low pressure cold-wall CVD system on a copper substrate, and (2) optimize the process of growing high quality graphene in terms of carrier mobility, and crystal...... structure. Optimization of a process for graphene growth on commercially available copper foil is limited by the number of aluminium oxide particles on the surface of the catalyst. By replacing the copper foil with a thin deposited copper film on a SiO2/Si or c-plane sapphire wafer the particles can...

  7. Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

    Science.gov (United States)

    Jagannathan, Basanth

    Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

  8. ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

    Energy Technology Data Exchange (ETDEWEB)

    Purandare, Yashodhan, E-mail: Y.Purandare@shu.ac.uk; Ehiasarian, Arutiun; Hovsepian, Papken [Nanotechnology Centre for PVD Research, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Santana, Antonio [Ionbond AG Olten, Industriestrasse 211, CH-4600 Olten (Switzerland)

    2014-05-15

    Zirconium nitride (ZrN) coatings were deposited on 1 μm finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5 μm with hardness in the range of 30–40 GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

  9. CVD-Graphene-Based Flexible, Thermoelectrochromic Sensor

    Directory of Open Access Journals (Sweden)

    Adam Januszko

    2017-01-01

    Full Text Available The main idea behind this work was demonstrated in a form of a new thermoelectrochromic sensor on a flexible substrate using graphene as an electrically reconfigurable thermal medium (TEChrom™. Our approach relies on electromodulation of thermal properties of graphene on poly(ethylene terephthalate (PET via mechanical destruction of a graphene layer. Graphene applied in this work was obtained by chemical vapor deposition (CVD technique on copper substrate and characterized by Raman and scanning tunneling spectroscopy. Electrical parameters of graphene were evaluated by the van der Pauw method on the transferred graphene layers onto SiO2 substrates by electrochemical delamination method. Two configurations of architecture of sensors, without and with the thermochromic layer, were investigated, taking into account the increase of voltage from 0 to 50 V and were observed by thermographic camera to define heat energy. Current-voltage characteristics obtained for the sensor with damaged graphene layer are linear, and the resistivity is independent from the current applied. The device investigated under 1000 W/m2 exhibited rise of resistivity along with increased temperature. Flexible thermoelectrochromic device with graphene presented here can be widely used as a sensor for both the military and civil monitoring.

  10. Metallization on FDM Parts Using the Chemical Deposition Technique

    Directory of Open Access Journals (Sweden)

    Azhar Equbal

    2014-08-01

    Full Text Available Metallization of ABS (acrylonitrile-butadiene-styrene parts has been studied on flat part surfaces. These parts are fabricated on an FDM (fused deposition modeling machine using the layer-wise deposition principle using ABS as a part material. Electroless copper deposition on ABS parts was performed using two different surface preparation processes, namely ABS parts prepared using chromic acid for etching and ABS parts prepared using a solution mixture of sulphuric acid and hydrogen peroxide (H2SO4/H2O2 for etching. After surface preparations using these routes, copper (Cu is deposited electrolessly using four different acidic baths. The acidic baths used are 5 wt% CuSO4 (copper sulfate with 15 wt% of individual acids, namely HF (hydrofluoric acid, H2SO4 (sulphuric acid, H3PO4 (phosphoric acid and CH3COOH (acetic acid. Cu deposition under different acidic baths used for both the routes is presented and compared based on their electrical performance, scanning electron microscopy (SEM and energy dispersive X-ray spectrometry (EDS. The result shows that chromic acid etched samples show better electrical performance and Cu deposition in comparison to samples etched via H2SO4/H2O2.

  11. Temperature dependence of InN film deposition by an RF plasma-assisted reactive ion beam sputtering deposition technique

    International Nuclear Information System (INIS)

    Shinoda, Hiroyuki; Mutsukura, Nobuki

    2005-01-01

    Indium nitride (InN) films were deposited on Si(100) substrates using a radiofrequency (RF) plasma-assisted reactive ion beam sputtering deposition technique at various substrate temperatures. The X-ray diffraction patterns of the InN films suggest that the InN films deposited at substrate temperatures up to 370 deg C were cubic crystalline InN; and at 500 deg C, the InN film was hexagonal crystalline InN. In a scanning electron microscope image of the InN film surface, facets of cubic single-crystalline InN grains were clearly observed on the InN film deposited at 370 deg C. The inclusion of metallic indium appeared on the InN film deposited at 500 deg C

  12. Ethylene Gas Sensing Properties of Tin Oxide Nanowires Synthesized via CVD Method

    Science.gov (United States)

    Akhir, Maisara A. M.; Mohamed, Khairudin; Rezan, Sheikh A.; Arafat, M. M.; Haseeb, A. S. M. A.; Uda, M. N. A.; Nuradibah, M. A.

    2018-03-01

    This paper studies ethylene gas sensing performance of tin oxide (SnO2) nanowires (NWs) as sensing material synthesized using chemical vapor deposition (CVD) technique. The effect of NWs diameter on ethylene gas sensing characteristics were investigated. SnO2 NWs with diameter of ∼40 and ∼240 nm were deposited onto the alumina substrate with printed gold electrodes and tested for sensing characteristic toward ethylene gas. From the finding, the smallest diameter of NWs (42 nm) exhibit fast response and recovery time and higher sensitivity compared to largest diameter of NWs (∼240 nm). Both sensor show good reversibility features for ethylene gas sensor.

  13. On the deposition parameters of indium oxide (IO) and tin oxide (TO) by reactive evaporation technique

    International Nuclear Information System (INIS)

    Hassan, F.; Abdullah, A.H.; Salam, R.

    1990-01-01

    Thin films of tin oxide (TO) and indium oxide (IO) are prepared by the reactive evaporation technique, where indium or tin sources are evaporated and made to react with oxygen gas injected close to the substrate. In both depositions a substrate temperature of 380 0 C and a chamber pressure of 2x10 -5 mbar are utilized, but however different oxygen flow rates has been maintained. For TO, the deposition rate is found to be constant up to about 55 minutes of deposition time with a deposition rate of about 0.10 A/s, but for longer deposition time the deposition rate increases rapidly up to about 0.30 A/s. The IO displays a higher deposition rate of about 0.80 A/s over a deposition time 30 minutes, beyond which the deposition rate increases gradually

  14. Synthesis and evaluation of germanium organometallic compounds as precursors for chemical vapor deposition (CVD) and for obtaining nanoparticles of elemental germanium

    International Nuclear Information System (INIS)

    Ballestero Martinez, Ernesto

    2014-01-01

    The interest in the development of materials having applications such as electronics areas or biomarkers has affected the synthesis of new compounds based on germanium. This element has had two common oxidation states, +4 and +2, of them, +2 oxidation state has been the least studied and more reactive. Additionally, compounds of germanium (II) have had similarities with carbenes regarding the chemical acid-base Lewis. The preparation of compounds of germanium (II) with ligands β-decimations has enabled stabilization of new chemical functionalities and, simultaneously, provided interesting thermal properties to develop new preparation methodologies of materials with novel properties. The preparation of amides germanium(II) L'Ge(NHPh) [1, L' = {HC (CMeN-2,4,6-Me 3 C 6 H 2 ) 2 }], L'Ge(4-NHPy) [2] L'Ge(2-NHPy) [3] and LGe(2-NHPy) [4, L = {HC(CMeN-2,6- i Pr 2 C 6 H 3 ) 2 }]; the structural chemical composition were determined using techniques such as nuclear magnetic resonance ( 1 H, 13 C), other techniques are treated: elemental analysis, melting point, infrared spectroscopy, X-ray diffraction of single crystal and thermal gravimetric analysis (TGA). The TGA has showed that 4-1 have experimented a thermal decomposition; therefore, these compounds could be considered as potential starting materials for obtaining germanium nitride (GeN x ). Certainly, the availability of nitrogen coordinating atoms in the chemical composition in 2-4 have been interesting because it could act as ligands in reactions with transition metal complexes. That way, information could be obtained at the molecular level for some reactions and interactions that in surface chemistry have used similar link sites, for example, chemical functionalization of silicon and germanium substrates. The synthesis and structural characterization of germanium chloride compound(II) L''GeCl [5, L'' = HC{(CMe) (N-2,6-Me 2 C 6 H 3 )} 2 ], which could be used later for the

  15. Hot-wire chemical vapour deposition of carbon nanotubes

    CSIR Research Space (South Africa)

    Cummings, FR

    2006-07-01

    Full Text Available ablation of graphite, carbon-arc discharge and chemical vapour deposition (CVD). However, some of these techniques have been shown to be expensive due to high deposition temperatures and are not easily controllable. Recently hot-wire chemical vapour...

  16. Response of CVD diamond detectors to alpha radiation

    Energy Technology Data Exchange (ETDEWEB)

    Souw, E.-K. [Brookhaven National Lab., Upton, NY (United States); Meilunas, R.J. [Northrop-Grumman Corporation, Bethpage, NY 11714-3582 (United States)

    1997-11-21

    This article describes some results from an experiment with CVD diamond films used as {alpha} particle detectors. It demonstrates that bulk polarization can be effectively stopped within a reasonable time interval. This will enable detector calibration and quantitative measurement. A possible mechanism for the observed polarization quenching is discussed. It involves two types of carrier traps and a tentative band-gap model derived from the results of photoconductive current measurements. The experiment was set up mainly to investigate {alpha} detection properties of polycrystalline diamond films grown by the technique of microwave plasma enhanced chemical vapor deposition. For comparison, two commercially purchased diamond wafers were also investigated, i.e., one grown by the DC arc jet method, and the other, a type-IIa natural diamond wafer (not preselected). The best response to {alpha} particles was obtained using diamond thin-films grown by the microwave PECVD method, followed by the type-IIa natural diamond, and finally, the CVD diamond grown by the DC arc jet technique. (orig.). 43 refs.

  17. Synthesis and evaluation of germanic organometallic compounds as precursors for chemical vapor deposition (CVD) and for obtaining nanoparticles of elemental germanium

    International Nuclear Information System (INIS)

    Ballestero Martinez, Ernesto

    2014-01-01

    The interest in the development of materials that have applications in areas such as electronics or biomarkers has affected the synthesis of new compounds based on germanium. This element has two states of common oxidation, +4 and +2, of them, the +2 oxidation state is the least studied and more reactive. Additionally, compounds of germanium (II) have similarities to carbenes in terms Lewis'acid base chemistry. The preparation of compounds of germanium (II) with ligands β-diketiminates has made possible the stabilization of new chemical functionalities and, simultaneously, it has provided interesting thermal properties to develop new methods of preparation of materials with novel properties. The preparation of amides germanium (II) L'Ge (NHPh) [1, L'= {HC (CMeN-2,4,6-Me 3 C 6 H 2 ) 2 } - ], L'Ge (4-NHPy) [2], L'Ge (2-NHPy) [3] and LGe(2-NHPy) [4, L = {HC (CMeN-2,6- i Pr 2 C 6 H 3 ) 2 ] - ] are presented, the chemical and structural composition was determined by using techniques such as nuclear magnetic resonance ( 1 H, 13 C), elemental analysis, melting point, infrared spectroscopy, X-ray diffraction of single crystal and thermogravimetric analysis (TGA). The TGA has demonstrated that 1-4 experience a thermal decomposition, therefore, these compounds could be considered as potential starting materials for the obtaining of germanium nitride (GeN x ). Certainly, the availability of coordinating nitrogen atoms in the chemical composition in 2-4 have been interesting given that it could act as ligands in reactions with transition metal complexes. Thus, relevant information to molecular level could be obtained for some reactions and interactions that have used similar link sites in surface chemistry, for example, the chemical functionalization of silicon and germanium substrate. Additionally, the synthesis and structural characterization of germanium chloride compound (II) L G eCl [5, L' = HC{(CMe) (N-2,6-Me 2 C 6 H 3 )} 2 - ] is reported

  18. Seasonal atmospheric deposition variations of polychlorinated biphenyls (PCBs) and comparison of some deposition sampling techniques.

    Science.gov (United States)

    Birgül, Askın; Tasdemir, Yücel

    2011-03-01

    Ambient air and bulk deposition samples were collected between June 2008 and June 2009. Eighty-three polychlorinated biphenyl (PCB) congeners were targeted in the samples. The average gas and particle PCB concentrations were found as 393 ± 278 and 70 ± 102 pg/m(3), respectively, and 85% of the atmospheric PCBs were in the gas phase. Bulk deposition samples were collected by using a sampler made of stainless steel. The average PCB bulk deposition flux value was determined as 6,020 ± 4,350 pg/m(2) day. The seasonal bulk deposition fluxes were not statistically different from each other, but the summer flux had higher values. Flux values differed depending on the precipitation levels. The average flux value in the rainy periods was 7,480 ± 4,080 pg/m(2) day while the average flux value in dry periods was 5,550 ± 4,420 pg/m(2) day. The obtained deposition values were lower than the reported values given for the urban and industrialized areas, yet close to the ones for the rural sites. The reported deposition values were also influenced by the type of the instruments used. The average dry deposition and total deposition velocity values calculated based on deposition and concentration values were found as 0.23 ± 0.21 and 0.13 ± 0.13 cm/s, respectively.

  19. Chemical solution deposition techniques for epitaxial growth of complex oxides

    NARCIS (Netherlands)

    ten Elshof, Johan E.; Koster, G.; Huijben, Mark; Rijnders, G.

    2015-01-01

    The chemical solution deposition (CSD) process is a wet-chemical process that is employed to fabricate a wide variety of amorphous and crystalline oxide thin films. This chapter describes the typical steps in a CSD process and their influence on the final microstructure and properties of films, and

  20. Verification of thermo-fluidic CVD reactor model

    International Nuclear Information System (INIS)

    Lisik, Z; Turczynski, M; Ruta, L; Raj, E

    2014-01-01

    Presented paper describes the numerical model of CVD (Chemical Vapour Deposition) reactor created in ANSYS CFX, whose main purpose is the evaluation of numerical approaches used to modelling of heat and mass transfer inside the reactor chamber. Verification of the worked out CVD model has been conducted with measurements under various thermal, pressure and gas flow rate conditions. Good agreement between experimental and numerical results confirms correctness of the elaborated model.

  1. Superhydrophobic polytetrafluoroethylene thin films with hierarchical roughness deposited using a single step vapor phase technique

    International Nuclear Information System (INIS)

    Gupta, Sushant; Arjunan, Arul Chakkaravarthi; Deshpande, Sameer; Seal, Sudipta; Singh, Deepika; Singh, Rajiv K.

    2009-01-01

    Superhydrophobic polytetrafluoroethylene films with hierarchical surface roughness were deposited using pulse electron deposition technique. We were able to modulate roughness of the deposited films by controlling the beam energy and hence the electron penetration depth. The films deposited at higher beam energy showed contact angle as high as 166 o . The scanning electron and atomic force microscope studies revealed clustered growth and two level sub-micron asperities on films deposited at higher energies. Such dual-scale hierarchical roughness and heterogeneities at the water-surface interface was attributed to the observed contact angle and thus its superhydrophobic nature.

  2. Superhydrophobic polytetrafluoroethylene thin films with hierarchical roughness deposited using a single step vapor phase technique

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Sushant, E-mail: sushant3@ufl.ed [Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 (United States); Arjunan, Arul Chakkaravarthi [Sinmat Incorporated, 2153 SE Hawthorne Road, 129, Gainesville, Florida 32641 (United States); Deshpande, Sameer; Seal, Sudipta [Advanced Material Processing and Analysis Center, University of Central Florida, Orlando, Florida 32816 (United States); Singh, Deepika [Sinmat Incorporated, 2153 SE Hawthorne Road, 129, Gainesville, Florida 32641 (United States); Singh, Rajiv K. [Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 (United States)

    2009-06-30

    Superhydrophobic polytetrafluoroethylene films with hierarchical surface roughness were deposited using pulse electron deposition technique. We were able to modulate roughness of the deposited films by controlling the beam energy and hence the electron penetration depth. The films deposited at higher beam energy showed contact angle as high as 166{sup o}. The scanning electron and atomic force microscope studies revealed clustered growth and two level sub-micron asperities on films deposited at higher energies. Such dual-scale hierarchical roughness and heterogeneities at the water-surface interface was attributed to the observed contact angle and thus its superhydrophobic nature.

  3. Crystalline silicon thin film growth by ECR plasma CVD for solar cells

    International Nuclear Information System (INIS)

    Licai Wang

    1999-07-01

    This thesis describes the background, motivation and work carried out towards this PhD programme entitled 'Crystalline Silicon Thin Film Growth by ECR Plasma CVD for Solar Cells'. The fundamental principles of silicon solar cells are introduced with a review of silicon thin film and bulk solar cells. The development and prospects for thin film silicon solar cells are described. Some results of a modelling study on thin film single crystalline solar cells are given which has been carried out using a commercially available solar cell simulation package (PC-1D). This is followed by a description of thin film deposition techniques. These include Chemical Vapour Deposition (CVD) and Plasma-Assisted CVD (PACVD). The basic theory and technology of the emerging technique of Electron Cyclotron Resonance (ECR) PACVD, which was used in this research, are introduced and the potential advantages summarised. Some of the basic methods of material and cell characterisation are briefly described, together with the work carried out in this research. The growth by ECR PACVD at temperatures 2 illumination. The best efficiency in the ECR grown structures was 13.76% using an epitaxial emitter. Cell performance was analysed in detail and the factors controlling performance identified by fitting self-consistently the fight and dark current-voltage and spectral response data using PC-1D. Finally, the conclusions for this research and suggestions for further work are outlined. (author)

  4. Recent results with CVD diamond trackers

    Energy Technology Data Exchange (ETDEWEB)

    Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; White, C.; Ziock, H.; Zoeller, M

    1999-08-01

    We present recent results on the use of Chemical Vapor Deposition (CVD) diamond microstrip detectors for charged particle tracking. A series of detectors was fabricated using 1 x 1 cm{sup 2} diamonds. Good signal-to-noise ratios were observed using both slow and fast readout electronics. For slow readout electronics, 2 {mu}s shaping time, the most probable signal-to-noise ratio was 50 to 1. For fast readout electronics, 25 ns peaking time, the most probable signal-to-noise ratio was 7 to 1. Using the first 2 x 4 cm{sup 2} diamond from a production CVD reactor with slow readout electronics, the most probable signal-to-noise ratio was 23 to 1. The spatial resolution achieved for the detectors was consistent with the digital resolution expected from the detector pitch.

  5. Recent results with CVD diamond trackers

    CERN Document Server

    Adam, W; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Runólfsson, O; Russ, J; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; White, C; Ziock, H J; Zöller, M

    1999-01-01

    We present recent results on the use of chemical vapor deposition (CVD) diamond microstrip detectors for charged particle tracking. A series of detectors was fabricated using 1*1 cm/sup 2/ diamonds. Good signal-to-noise ratios were observed using both slow and fast readout electronics. For slow readout electronics, 2 mu s shaping time, the most probable signal-to-noise ratio was 50 to 1. For fast readout electronics, 25 ns peaking time, the most probable signal-to-noise ratio was 7 to 1. Using the first 2*4 cm/sup 2/ diamond from a production CVD reactor with slow readout electronics, the most probable signal-to-noise ratio was 23 to 1. The spatial resolution achieved for the detectors was consistent with the digital resolution expected from the detector pitch. (6 refs).

  6. Mechanics-driven patterning of CVD graphene for roll-based manufacturing process

    Science.gov (United States)

    Kim, Sang-Min; Jang, Bongkyun; Jo, Kyungmin; Kim, Donghyuk; Lee, Jihye; Kim, Kyung-Shik; Lee, Seung-Mo; Lee, Hak-Joo; Han, Seung Min; Kim, Jae-Hyun

    2017-06-01

    Graphene is considered as a promising material for flexible and transparent electrodes due to its outstanding electrical, optical, and mechanical properties. Efforts to mass-produce graphene electrodes led to the development of roll-to-roll chemical vapor deposition (CVD) graphene growth and transfer, and the only remaining obstacle to the mass-production of CVD graphene electrodes is a cost-effective patterning technique that is compatible with the roll-to-roll manufacturing. Herein, we propose a mechanics-driven technique for patterning graphene synthesized on copper foil (commonly used in roll-to-roll manufacturing). The copper foil is exposed to high temperature for a prolonged period during the CVD growth of graphene, and thus can result in recrystallization and grain growth of the copper foil and thereby reducing to the yield strength. This softening behavior of the copper was carefully controlled to allow simple stamp patterning of the graphene. The strength of the underlying substrate was controlled for the accuracy of the residual patterns. The proposed stamp patterning technique is mask-less and photoresist-free, and can be performed at room temperature without high-energy sources such as lasers or plasma. To demonstrate the capability of this process to produce a continuous electrode, a transparent in-plane supercapacitor was fabricated using the proposed patterning technique.

  7. Dimensionless Numbers Expressed in Terms of Common CVD Process Parameters

    Science.gov (United States)

    Kuczmarski, Maria A.

    1999-01-01

    A variety of dimensionless numbers related to momentum and heat transfer are useful in Chemical Vapor Deposition (CVD) analysis. These numbers are not traditionally calculated by directly using reactor operating parameters, such as temperature and pressure. In this paper, these numbers have been expressed in a form that explicitly shows their dependence upon the carrier gas, reactor geometry, and reactor operation conditions. These expressions were derived for both monatomic and diatomic gases using estimation techniques for viscosity, thermal conductivity, and heat capacity. Values calculated from these expressions compared well to previously published values. These expressions provide a relatively quick method for predicting changes in the flow patterns resulting from changes in the reactor operating conditions.

  8. Effect of Different Catalyst Deposition Technique on Aligned Multiwalled Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Mohamed Shuaib Mohamed Saheed

    2014-01-01

    Full Text Available The paper reported the investigation of the substrate preparation technique involving deposition of iron catalyst by electron beam evaporation and ferrocene vaporization in order to produce vertically aligned multiwalled carbon nanotubes array needed for fabrication of tailored devices. Prior to the growth at 700°C in ethylene, silicon dioxide coated silicon substrate was prepared by depositing alumina followed by iron using two different methods as described earlier. Characterization analysis revealed that aligned multiwalled carbon nanotubes array of 107.9 µm thickness grown by thermal chemical vapor deposition technique can only be achieved for the sample with iron deposited using ferrocene vaporization. The thick layer of partially oxidized iron film can prevent the deactivation of catalyst and thus is able to sustain the growth. It also increases the rate of permeation of the hydrocarbon gas into the catalyst particles and prevents agglomeration at the growth temperature. Combination of alumina-iron layer provides an efficient growth of high density multiwalled carbon nanotubes array with the steady growth rate of 3.6 µm per minute for the first 12 minutes and dropped by half after 40 minutes. Thicker and uniform iron catalyst film obtained from ferrocene vaporization is attributed to the multidirectional deposition of particles in the gaseous form.

  9. Uranium solution mining cost estimating technique: means for rapid comparative analysis of deposits

    International Nuclear Information System (INIS)

    Anon.

    1978-01-01

    Twelve graphs provide a technique for determining relative cost ranges for uranium solution mining projects. The use of the technique can provide a consistent framework for rapid comparative analysis of various properties of mining situations. The technique is also useful to determine the sensitivities of cost figures to incremental changes in mining factors or deposit characteristics

  10. Industrially relevant Al2O3 deposition techniques for the surface passivation of Si solar cells

    NARCIS (Netherlands)

    Schmidt, J.; Werner, F.; Veith, B.; Zielke, D.; Bock, R.; Tiba, M.V.; Poodt, P.; Roozeboom, F.; Li, A.; Cuevas, A.; Brendel, R.

    2010-01-01

    We present independently confirmed efficiencies of 21.4% for PERC cells with plasma-assisted atom-ic-layer-deposited (plasma ALD) Al2O3 rear passivation and 20.7% for cells with thermal ALD-Al2O3. Additionally, we evaluate three different industrially relevant techniques for the deposition of

  11. The Development of a Differential Deposition Technique for Figure Correction in Grazing Incidence Optics

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose the development of a physical-vapor-deposition coating technique to correct residual figure errors in grazing-incidence optics. The process involves...

  12. Natural and CVD type diamond detectors as dosimeters in hadrontherapy applications

    International Nuclear Information System (INIS)

    Cirrone, G.A.P.; Cuttone, G.; Rafaele, L.; Sabini, M.G.; De Angelis, C.; Onori, S.; Pacilio, M.; Bucciolini, M.; Bruzzi, M.; Sciortino, S.

    2003-01-01

    Diamond is potentially a suitable material for use as radiation dosimeter; the wide band gap results in low dark currents and low sensitivity to visible light, the high carrier mobility can give rapid response, the very high density of strong bonds in the crystal structure make diamond very resistant to radiation damage; moreover it is tissue equivalent. The more recent advances in the synthesis of polycrystalline diamond by chemical vapour deposition (CVD) techniques have allowed the synthesis of material with electronic properties suitable for dosimetric application. In this paper we will report the results obtained in the study of the response of a natural diamond dosimeter and a CVD one irradiated with 62 AMeV proton beams to demonstrate their possible application in protontherapy

  13. Aluminum and aluminum/silicon coatings on ferritic steels by CVD-FBR technology

    International Nuclear Information System (INIS)

    Perez, F.J.; Hierro, M.P.; Trilleros, J.A.; Carpintero, M.C.; Sanchez, L.; Bolivar, F.J.

    2006-01-01

    The use of chemical vapor deposition by fluidized bed reactors (CVD-FBR) offers some advantages in comparison to other coating techniques such as pack cementation, because it allows coating deposition at lower temperatures than pack cementation and at atmospheric pressure without affecting the mechanical properties of material due to heat treatments of the bulk during coating process. Aluminum and aluminum/silicon coatings have been obtained on two different ferritics steels (P-91 and P-92). The coatings were analyzed using several techniques like SEM/EDX and XRD. The results indicated that both coatings were form by Fe 2 Al 5 intermetallic compound, and in the co-deposition the Si was incorporated to the Fe 2 Al 5 structure in small amounts

  14. Transport Properties of LCMO Granular Films Deposited by the Pulsed Electron Deposition Technique

    Institute of Scientific and Technical Information of China (English)

    CHEN Leiming; XU Bin; ZHANG Yan; CHEN Zhenping

    2011-01-01

    By finely controlling the deposition parameters in the pulsed electron deposition process,granular La2/3Ca1/3MnO3 (LCMO) film was grown on silicon substrates.The substrate temperature,ambient pressure in the deposition chamber and acceleration potential for the electron beam were all found to affect the grain size of the film,resulting in different morphologies of the samples.Transport properties of the obtained granular films,especially the magnetoresistance (MR),were studied.Prominent low-field MR was observed in all samples,indicating the forming of grain boundaries in the sample.The low-field MR show great sensitive to the morphology evolution,which reaches the highest value of about 40% for the sample with the grain size of about 250 nm.More interestingly,positive-MR (p-MR) was also detected above 300 K when low magnetic field applying,whereas it disappeared with higher magnetic field applied up to 1.5 and 2 Tesla.Instead of the spinpolarized tunneling process being commonly regarded as a responsible reason,lattice mismatch between LCMO film and silicon substrate appears to be the origin of the p-MR

  15. Experimental setup for producing tungsten coated graphite tiles using plasma enhanced chemical vapor deposition technique for fusion plasma applications

    International Nuclear Information System (INIS)

    Chauhan, Sachin Singh; Sharma, Uttam; Choudhary, K.K.; Sanyasi, A.K.; Ghosh, J.; Sharma, Jayshree

    2013-01-01

    Plasma wall interaction (PWI) in fusion grade machines puts stringent demands on the choice of materials in terms of high heat load handling capabilities and low sputtering yields. Choice of suitable material still remains a challenge and open topic of research for the PWI community. Carbon fibre composites (CFC), Beryllium (Be), and Tungsten (W) are now being considered as first runners for the first wall components of future fusion machines. Tungsten is considered to be one of the suitable materials for the job because of its superior properties than carbon like low physical sputtering yield and high sputter energy threshold, high melting point, fairly high re-crystallization temperature, low fuel retention capabilities, low chemical sputtering with hydrogen and its isotopes and most importantly the reparability with various plasma techniques both ex-situ and in-situ. Plasma assisted chemical vapour deposition is considered among various techniques as the most preferable technique for fabricating tungsten coated graphite tiles to be used as tokamak first wall and target components. These coated tiles are more favourable compared to pure tungsten due to their light weight and easier machining. A system has been designed, fabricated and installed at SVITS, Indore for producing tungsten coated graphite tiles using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) technique for Fusion plasma applications. The system contains a vacuum chamber, a turbo-molecular pump, two electrodes, vacuum gauges, mass analyzer, mass flow controllers and a RF power supply for producing the plasma using hydrogen gas. The graphite tiles will be put on one of the electrodes and WF6 gas will be inserted in a controlled manner in the hydrogen plasma to achieve the tungsten-coating with WF6 dissociation. The system is integrated at SVITS, Indore and a vacuum of the order of 3*10 -6 is achieved and glow discharge plasma has been created to test all the sub-systems. The system design with

  16. Silicon doping techniques using chemical vapor dopant deposition

    NARCIS (Netherlands)

    Popadic, M.

    2009-01-01

    Ultrashallow junctions are essential for the achievement of superior transistor performance, both in MOSFET and bipolar transistors. The stringent demands require state-of-the-art fabrication techniques. At the same time, in a different context, the accurate fabrication of various n type doping

  17. Structural characterization of the nickel thin film deposited by glad technique

    Directory of Open Access Journals (Sweden)

    Potočnik J.

    2013-01-01

    Full Text Available In this work, a columnar structure of nickel thin film has been obtained using an advanced deposition technique known as Glancing Angle Deposition. Nickel thin film was deposited on glass sample at the constant emission current of 100 mA. Glass sample was positioned 15 degrees with respect to the nickel vapor flux. The obtained nickel thin film was characterized by Force Modulation Atomic Force Microscopy and by Scanning Electron Microscopy. Analysis indicated that the formation of the columnar structure occurred at the film thickness of 1 μm, which was achieved for the deposition time of 3 hours. [Projekat Ministarstva nauke Republike Srbije, br. III45005

  18. Geochemical prospecting techniques for ore deposits in periglacial regions

    International Nuclear Information System (INIS)

    Pitul'ko, V.M.

    1977-01-01

    Necessity and prospects of the implementation of geochemical methods of search in periglacial regions are discussed. The behaviour of chemical elements under the conditions of oxide and sulphate cryogenic topographies whose development has common regularities is analyzed. According to the specificity of migration the observed elements have been divided into four groups: active, mobile, low-mobile and inert migrants. Uranium which is present in ores in the form of pitchblende in oxide zones of the oxidation is actively redistributed. In zones of the oxidation of rare metal metasomatites connected with alkalic ultrabasic rocks only that part of U is mobile which being released from pyrochlore forms the regenerated uranium black and the partial enrichment of the iron gossan. Th like other elements of the 4-th group in all oxidation zones is observed to accumulate in minerals - concentrators: thorite, pyrochlore and so on. A diagram is plotted which characterizes the migration of elements whithin aureole landscapes as well as in automonous and dependent topographies of ore-free areas. The complex nature of secondary aureoles displays the most complete anomalous spectrum of elements - indicators of mineralization. The table of the most typical elements - indicators of the secondary scattering of some endogenic deposits of the cryolitic zone is given

  19. Biomaterial thin film deposition and characterization by means of MAPLE technique

    International Nuclear Information System (INIS)

    Bloisi, F.; Vicari, L.; Papa, R.; Califano, V.; Pedrazzani, R.; Bontempi, E.; Depero, L.E.

    2007-01-01

    Polyethylene glycol (PEG) is a polymer with technologically important applications, especially as a biomaterial. Several biomedical applications (such as tissue engineering, spatial patterning of cells, anti-biofouling and biocompatible coatings) require the application of high quality PEG thin films. In order to have a good adhesion to substrate chemically modified polymer molecules have been used, but for some 'in vivo' applications it is essential to deposit a film with the same chemical and structural properties of bulk PEG. Pulsed laser deposition (PLD) technique is generally able to produce high quality thin films but it is inadequate for polymer/organic molecules. MAPLE (Matrix Assisted Pulsed Laser Evaporation) is a recently developed PLD based thin film deposition technique, particularly well suited for organic/polymer thin film deposition. Up to now MAPLE depositions have been carried out mainly by means of modified PLD systems, using excimer lasers operating in UV, but the use of less energetic radiations can minimize the photochemical decomposition of the polymer molecules. We have used a deposition system explicitly designed for MAPLE technique connected to a Q-switched Ng:YAG pulsed laser which can be operated at different wavelength ranging from IR to UV in order to optimise the deposition parameters. The capability of MAPLE technique to deposit PEG has been confirmed and preliminary results show that visible (532 nm wavelength) radiation gives better results with respect to UV (355 nm) radiation. Despite usually UV wavelengths have been used and even if more systematic tests must be performed, it is important to underline that the choice of laser wavelength plays an important role in the application of MAPLE thin film deposition technique

  20. Ballistic Josephson junctions based on CVD graphene

    Science.gov (United States)

    Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

    2018-04-01

    Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

  1. Deposition techniques for the preparation of thin film nuclear targets

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1987-07-01

    This review commences with a brief description of the basic principles that regulate vacuum evaporation and the physical processes involved in thin film formation, followed by a description of the experimental methods used. The principle methods of heating the evaporant are detailed and the means of measuring and controlling the film thickness are elucidated. Types of thin film nuclear targets are considered and various film release agents are listed. Thin film nuclear target behaviour under ion-bombardment is described and the dependence of nuclear experimental results upon target thickness and uniformity is outlined. Special problems associated with preparing suitable targets for lifetime measurements are discussed. The causes of stripper-foil thickening and breaking under heavy-ion bombardment are considered. A comparison is made between foils manufactured by a glow discharge process and those produced by vacuum sublimation. Consideration is given to the methods of carbon stripper-foil manufacture and to the characteristics of stripper-foil lifetimes are considered. Techniques are described that have been developed for the fabrication of special targets, both from natural and isotopically enriched material, and also of elements that are either chemically unstable, or thermally unstable under irradiation. The reduction of metal oxides by the use of hydrogen or by utilising a metallothermic technique, and the simultaneous evaporation of reduced rare earth elements is described. A comprehensive list of the common targets is presented

  2. On the potential of Hg-Photo-CVD process for the low temperature growth of nano-crystalline silicon (Topical review)

    International Nuclear Information System (INIS)

    Barhdadi, A.

    2005-08-01

    Mercury-Sensitized Photo-Assisted Chemical Vapor Deposition (Hg-Photo-CVD) technique opens new possibilities for reducing thin film growth temperature and producing novel semiconductor materials suitable for the future generation of high efficiency thin film solar cells onto low cost flexible plastic substrates. This paper provides an overview of this technique, with the emphasis on its potential in low temperature elaboration of nano-crystalline silicon for the development of thin films photovoltaic technology. (author)

  3. Cyclic voltammetry response of an undoped CVD diamond electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Fabisiak, K., E-mail: kfab@ukw.edu.pl [Institute of Physics, Kazimierz Wielki University, Powstancow Wielkopolskich 2, 85-090 Bydgoszcz (Poland); Torz-Piotrowska, R. [Faculty of Chemical Technology and Engineering, UTLS Seminaryjna 3, 85-326 Bydgoszcz (Poland); Staryga, E. [Institute of Physics, Technical University of Lodz, Wolczanska 219, 90-924 Lodz (Poland); Szybowicz, M. [Faculty of Technical Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Paprocki, K.; Popielarski, P.; Bylicki, F. [Institute of Physics, Kazimierz Wielki University, Powstancow Wielkopolskich 2, 85-090 Bydgoszcz (Poland); Wrzyszczynski, A. [Institute of Physics, Technical University of Lodz, Wolczanska 219, 90-924 Lodz (Poland)

    2012-09-01

    Highlights: Black-Right-Pointing-Pointer Correlation was found between diamond quality and its electrochemical performance. Black-Right-Pointing-Pointer The electrode sensitivity depends on the content of sp{sup 2} carbon phase in diamond layer. Black-Right-Pointing-Pointer The sp{sup 2} carbon phase content has little influence on the CV peak separation ({Delta}E{sub p}). - Abstract: The polycrystalline undoped diamond layers were deposited on tungsten wire substrates by using hot filament chemical vapor deposition (HFCVD) technique. As a working gas the mixture of methanol in excess of hydrogen was used. The morphologies and quality of as-deposited films were monitored by means of scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy respectively. The electrochemical activity of the obtained diamond layers was monitored by using cyclic voltammetry measurements. Analysis of the ferrocyanide-ferricyanide couple at undoped diamond electrode suggests that electrochemical reaction at diamond electrode has a quasireversibile character. The ratio of the anodic and cathodic peak currents was always close to unity. In this work we showed that the amorphous carbon admixture in the CVD diamond layer has a crucial influence on its electrochemical performance.

  4. A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Auciello, O. (Microelectronics Center of North Carolina, Research Triangle Park, NC (USA) North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Krauss, A.R. (Argonne National Lab., IL (USA))

    1990-01-01

    The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

  5. Novel geochemical techniques integrated in exploration for uranium deposits at depth

    International Nuclear Information System (INIS)

    Kyser, K.

    2014-01-01

    Mineral deposits are in fact geochemical anomalies, and as such their detection and assessment of their impact on the environment should be facilitated using geochemical techniques. Although geochemistry has been used directly in the discovery of uranium deposits and more indirectly in shaping deposit models, the novel applications of geochemistry and integration with other data can be more effective in formulating exploration and remediation strategies. Recent research on the use of geochemistry in detecting uranium deposits at depth include: (1) more effective integration of geochemical with geophysical data to refine targets, (2) revealing element distributions in and around deposits to adequately assess the total chemical environment associated with the deposit, (3) the use of element tracing using elemental concentrations and isotopic compositions in the near surface environment to detect specific components that have migrated to the surface from uranium deposits at depth, (4) understand the effects of both macro- and micro-environments on element mobility across the geosphere-biosphere interface to enhance exploration using select media for uranium at depth. Geophysical data used in exploration can identify areas of conductors where redox contrasts may host mineralization, structures that act to focus fluids during formation of the deposits and act as conduits for element migration to the surface, and contrasts in geology that are required for the deposits. However, precision of these data is greatly diminished with depth, but geochemical data from drill core or surface media can enhance target identification when integrated with geophysical data. Geochemical orientation surveys over known unconformity-related deposits at depth clearly identify mineralization 900m deep. Drill core near the deposit, clay-size fractions separated from soil horizons and vegetation over and far from the deposit record element migration from the deposit as radiogenic He, Rn and Pb

  6. Recent Advances in Atmospheric Vapor-Phase Deposition of Transparent and Conductive Zinc Oxide

    NARCIS (Netherlands)

    Illiberi, A.; Poodt, P.; Roozeboom, F.

    2014-01-01

    The industrial need for high-throughput and low-cost ZnO deposition processes has triggered the development of atmospheric vapor-phase deposition techniques which can be easily applied to continuous, in-line manufacturing. While atmospheric CVD is a mature technology, new processes for the growth of

  7. Rubidium-strontium isotoppe study of Muruntan deposit. 1.Ore vien dating by isochrone technique

    International Nuclear Information System (INIS)

    Kostitsyn, Yu.A.

    1993-01-01

    Hydrothermal viens of Muruntau gold-ore deposit (Central Kyzylkum) have been studies by the isochrone technique. The ages obtained for the quartz-tourmaline (257+13 Ma), quartz-arsenopyrite (230.3+-3.5 Ma) and quartz-adularia (219.4+-4.2 Ma) hydrothermal viens reflect the different stages of the deposit evolution: gold-ore and gold-silver one. Strontium isotope analysis reveals that the matter of hydrothermal viens is originated from the surrounding black schists

  8. Overlayer structure of subphthalocyanine derivative deposited on Au (111) surface by a spray-jet technique

    International Nuclear Information System (INIS)

    Suzuki, Hitoshi; Yamada, Toshiki; Miki, Hideki; Mashiko, Shinro

    2006-01-01

    A new spray-jet technique was used to deposit subphthalocyanine derivative (chloro[tri-tert-butyl subphthalocyaninato]boron (TBSubPc)) on Au (111) surface in an ultra-high vacuum (UHV) chamber. The deposited molecular overlayer was observed with UHV scanning tunneling microscopy (STM) at 77 K. The STM images showed that TBSubPc molecules formed a stripe pattern with regular spacing, indicating that they preferentially adsorbed along the herringbone structure of the Au (111) surface. This behavior was very similar to that of TBSubPc molecules deposited by thermal evaporation

  9. CVD diamond substrates for electronic devices

    International Nuclear Information System (INIS)

    Holzer, H.

    1996-03-01

    In this study the applicability of chemical vapor deposition (CVD) diamond as a material for heat spreaders was investigated. Economical evaluations on the production of heat spreaders were also performed. For the diamond synthesis the hot-filament and microwave method were used respectively. The deposition parameters were varied in a way that free standing diamond layers with a thickness of 80 to 750 microns and different qualities were obtained. The influence of the deposition parameters on the relevant film properties was investigated and discussed. With both the hot-filament and microwave method it was possible to deposit diamond layers having a thermal conductivity exceeding 1200 W/mK and therefore to reach the quality level for commercial uses. The electrical resistivity was greater than 10 12 Ωcm. The investigation of the optical properties was done by Raman-, IR- and cathodoluminescence spectroscopy. Because of future applications of diamond-aluminium nitride composites as highly efficient heat spreaders diamond deposition an AIN was investigated. An improved substrate pretreatment prior to diamond deposition showed promising results for better performance of such composite heat spreaders. Both free standing layers and diamond-AIN composites could be cut by a CO2 Laser in Order to get an exact size geometry. A reduction of the diamond surface roughness was achieved by etching with manganese powder or cerium. (author)

  10. Fast method for reactor and feature scale coupling in ALD and CVD

    Science.gov (United States)

    Yanguas-Gil, Angel; Elam, Jeffrey W.

    2017-08-08

    Transport and surface chemistry of certain deposition techniques is modeled. Methods provide a model of the transport inside nanostructures as a single-particle discrete Markov chain process. This approach decouples the complexity of the surface chemistry from the transport model, thus allowing its application under general surface chemistry conditions, including atomic layer deposition (ALD) and chemical vapor deposition (CVD). Methods provide for determination of determine statistical information of the trajectory of individual molecules, such as the average interaction time or the number of wall collisions for molecules entering the nanostructures as well as to track the relative contributions to thin-film growth of different independent reaction pathways at each point of the feature.

  11. CVD Diamond Sensors In Detectors For High Energy Physics

    CERN Document Server

    AUTHOR|(INSPIRE)INSPIRE-00334150; Trischuk, William

    At the end of the next decade an upgrade of the Large Hadron Collider (LHC) to High Luminosity LHC (HL-LHC) is planned which requires the development of new radiation tolerant sensor technology. Diamond is an interesting material for use as a particle detector in high radiation environments. The large band gap ($5.47\\,\\text{eV}$) and the large displacement energy suggest that diamond is a radiation tolerant detector material. In this Thesis the capability of Chemical Vapor Deposition (CVD) diamond as such a sensor technology is investigated. The radiation damage constant for $800\\,\\text{MeV}$ protons is measured using single crystalline CVD (scCVD) and polycrystalline CVD (pCVD) diamonds irradiated to particle fluences up to $12 \\times 10^{15}\\,\\text{p/cm}^2$. In addition the signal response of a pCVD diamond detector after an irradiation to $12 \\times 10^{15}\\,\\text{p/cm}^2$ is investigated to determine if such a detector can be operated efficiently in the expected HL-LHC environment. By using electrodes em...

  12. Fabrication of cerium-doped yttrium aluminum garnet thin films by a mist CVD method

    Energy Technology Data Exchange (ETDEWEB)

    Murai, Shunsuke, E-mail: murai@dipole7.kuic.kyoto-u.ac.jp; Sato, Takafumi; Yao, Situ; Kamakura, Ryosuke; Fujita, Koji; Tanaka, Katsuhisa

    2016-02-15

    We synthesized thin films, consisting of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce), using the mist chemical vapor deposition (CVD) method, which allows the fabrication of high-quality thin films under atmospheric conditions without the use of vacuum equipment. Under a deposition rate of approximately 1 μm/h, the obtained thin films had a typical thickness of 2 μm. The XRD analysis indicated that the thin films consisted of single-phase YAG:Ce. The Rutherford backscattering confirmed the stoichiometry; the composition of the film was determined to be (Y, Ce){sub 3}Al{sub 5}O{sub 12}, with a Ce content of Ce/(Y+Ce)=2.5%. The YAG:Ce thin films exhibited fluorescence due to the 5d–4f electronic transitions characteristic of the Ce ions occupying the eight-coordinated dodecahedral sites in the YAG lattice. - Highlights: • We have synthesized thin films of yttrium aluminum garnet doped with Ce{sup 3+} (YAG:Ce) by using a mist chemical vapor deposition (CVD) method for the first time. • The thickness of the single-phase and stoichiometric thin film obtained by 2 h deposition and following heat treatments is 2 μm. • The thin film is porous but optically transparent, and shows yellow fluorescence upon irradiation with a blue light. • Mist-CVD is a green and sustainable technique that allows fabrication of high-quality thin films at atmospheric conditions without vacuum equipment.

  13. High collection efficiency CVD diamond alpha detectors

    International Nuclear Information System (INIS)

    Bergonzo, P.; Foulon, F.; Marshall, R.D.; Jany, C.; Brambilla, A.; McKeag, R.D.; Jackman, R.B.

    1998-01-01

    Advances in Chemical Vapor Deposited (CVD) diamond have enabled the routine use of this material for sensor device fabrication, allowing exploitation of its unique combination of physical properties (low temperature susceptibility (> 500 C), high resistance to radiation damage (> 100 Mrad) and to corrosive media). A consequence of CVD diamond growth on silicon is the formation of polycrystalline films which has a profound influence on the physical and electronic properties with respect to those measured on monocrystalline diamond. The authors report the optimization of physical and geometrical device parameters for radiation detection in the counting mode. Sandwich and co-planar electrode geometries are tested and their performances evaluated with regard to the nature of the field profile and drift distances inherent in such devices. The carrier drift length before trapping was measured under alpha particles and values as high as 40% of the overall film thickness are reported. Further, by optimizing the device geometry, they show that a gain in collection efficiency, defined as the induced charge divided by the deposited charge within the material, can be achieved even though lower bias values are used

  14. Evaluation of CVD silicon carbide for synchrotron radiation mirrors

    International Nuclear Information System (INIS)

    Takacs, P.Z.

    1981-07-01

    Chemical vapor deposited silicon carbide (CVD SiC) is a recent addition to the list of materials suitable for use in the harsh environment of synchrotron radiation (SR) beam lines. SR mirrors for use at normal incidence must be ultrahigh vacuum compatible, must withstand intense x-ray irradiation without surface damage, must be capable of being polished to an extremely smooth surface finish, and must maintain surface figure under thermal loading. CVD SiC exceeds the performance of conventional optical materials in all these areas. It is, however, a relatively new optical material. Few manufacturers have experience in producing optical quality material, and few opticians have experience in figuring and polishing the material. The CVD material occurs in a variety of forms, sensitively dependent upon reaction chamber production conditions. We are evaluating samples of CVD SiC obtained commercially from various manufacturers, representing a range of deposition conditions, to determine which types of CVD material are most suitable for superpolishing. At the time of this writing, samples are being polished by several commercial vendors and surface finish characteristics are being evaluated by various analytical methods

  15. Influence of solution deposition rate on properties of V_2O_5 thin films deposited by spray pyrolysis technique

    International Nuclear Information System (INIS)

    Abd–Alghafour, N. M.; Ahmed, Naser M.; Hassan, Zai; Mohammad, Sabah M.

    2016-01-01

    Vanadium oxide (V_2O_5) thin films were deposited on glass substrates by using a cost-efficient spray pyrolysis technique. The films were grown at 350° through thermal decomposition of VCl_3 in deionized water with different solution spray rates. The high resolution X-ray diffraction results revealed the formation of nanocrystalline films having orthorhombic structures with preferential orientation along (101) direction. The spray rate influenced the surface morphology and crystallite size of the films. The crystallite size was found to increase whereas the micro-strain was decreased by increasing the spray deposition rates. The increase in crystallite size and decrease in the macrostrain resulted in an improvement in the films’ crystallinity. The UV-Visible spectroscopy analysis indicated that the average transmittance of all films lies in the range 75-80 %. The band gap of V_2O_5 film was decreased from 2.65 to 2.46 eV with increase of the spray deposition rate from 5 ml/min to 10 ml/min. first, second, and third level headings (first level heading).

  16. Handbook of thin film deposition processes and techniques principles, methods, equipment and applications

    CERN Document Server

    Seshan, Krishna

    2002-01-01

    New second edition of the popular book on deposition (first edition by Klaus Schruegraf) for engineers, technicians, and plant personnel in the semiconductor and related industries. This book traces the technology behind the spectacular growth in the silicon semiconductor industry and the continued trend in miniaturization over the last 20 years. This growth has been fueled in large part by improved thin film deposition techniques and the development of highly specialized equipment to enable this deposition. The book includes much cutting-edge material. Entirely new chapters on contamination and contamination control describe the basics and the issues-as feature sizes shrink to sub-micron dimensions, cleanliness and particle elimination has to keep pace. A new chapter on metrology explains the growth of sophisticated, automatic tools capable of measuring thickness and spacing of sub-micron dimensions. The book also covers PVD, laser and e-beam assisted deposition, MBE, and ion beam methods to bring together a...

  17. Growth Assisted by Glancing Angle Deposition: A New Technique to Fabricate Highly Porous Anisotropic Thin Films.

    Science.gov (United States)

    Sanchez-Valencia, Juan Ramon; Longtin, Remi; Rossell, Marta D; Gröning, Pierangelo

    2016-04-06

    We report a new methodology based on glancing angle deposition (GLAD) of an organic molecule in combination with perpendicular growth of a second inorganic material. The resulting thin films retain a very well-defined tilted columnar microstructure characteristic of GLAD with the inorganic material embedded inside the columns. We refer to this new methodology as growth assisted by glancing angle deposition or GAGLAD, since the material of interest (here, the inorganic) grows in the form of tilted columns, though it is deposited under a nonglancing configuration. As a "proof of concept", we have used silver and zinc oxide as the perpendicularly deposited material since they usually form ill-defined columnar microstructures at room temperature by GLAD. By means of our GAGLAD methodology, the typical tilted columnar microstructure can be developed for materials that otherwise do not form ordered structures under conventional GLAD. This simple methodology broadens significantly the range of materials where control of the microstructure can be achieved by tuning the geometrical deposition parameters. The two examples presented here, Ag/Alq3 and ZnO/Alq3, have been deposited by physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD), respectively: two different vacuum techniques that illustrate the generality of the proposed technique. The two type of hybrid samples present very interesting properties that demonstrate the potentiality of GAGLAD. On one hand, the Ag/Alq3 samples present highly optical anisotropic properties when they are analyzed with linearly polarized light. To our knowledge, these Ag/Alq3 samples present the highest angular selectivity reported in the visible range. On the other hand, ZnO/Alq3 samples are used to develop highly porous ZnO thin films by using Alq3 as sacrificial material. In this way, antireflective ZnO samples with very low refractive index and extinction coefficient have been obtained.

  18. Topographic and spectroscopic characterization of electronic edge states in CVD grown graphene nanoribbons.

    Science.gov (United States)

    Pan, Minghu; Girão, E Costa; Jia, Xiaoting; Bhaviripudi, Sreekar; Li, Qing; Kong, Jing; Meunier, V; Dresselhaus, Mildred S

    2012-04-11

    We used scanning tunneling microscopy and spectroscopy (STM/S) techniques to analyze the relationships between the edge shapes and the electronic structures in as-grown chemical vapor deposition (CVD) graphene nanoribbons (GNRs). A rich variety of single-layered graphene nanoribbons exhibiting a width of several to 100 nm and up to 1 μm long were studied. High-resolution STM images highlight highly crystalline nanoribbon structures with well-defined and clean edges. Theoretical calculations indicate clear spin-split edge states induced by electron-electron Coulomb repulsion. The edge defects can significantly modify these edge states, and different edge structures for both sides of a single ribbon produce asymmetric electronic edge states, which reflect the more realistic features of CVD grown GNRs. Three structural models are proposed and analyzed to explain the observations. By comparing the models with an atomic resolution image at the edge, a pristine (2,1) structure was ruled out in favor of a reconstructed edge structure composed of 5-7 member rings, showing a better match with experimental results, and thereby suggesting the possibility of a defective morphology at the edge of CVD grown nanoribbons. © 2012 American Chemical Society

  19. Microscopic characterisation of suspended graphene grown by chemical vapour deposition

    NARCIS (Netherlands)

    Bignardi, L.; Dorp, W.F. van; Gottardi, S.; Ivashenko, O.; Dudin, P.; Barinov, A.; de Hosson, J.T.M.; Stöhr, M.; Rudolf, P.

    2013-01-01

    We present a multi-technique characterisation of graphene grown by chemical vapour deposition (CVD) and thereafter transferred to and suspended on a grid for transmission electron microscopy (TEM). The properties of the electronic band structure are investigated by angle-resolved photoelectron

  20. The study of metal sulphide nanomaterials obtained by chemical bath deposition and hot-injection technique

    Science.gov (United States)

    Maraeva, E. V.; Alexandrova, O. A.; Forostyanaya, N. A.; Levitskiy, V. S.; Mazing, D. S.; Maskaeva, L. N.; Markov, V. Ph; Moshnikov, V. A.; Shupta, A. A.; Spivak, Yu M.; Tulenin, S. S.

    2015-11-01

    In this study lead sulphide - cadmium sulphide based layers were obtained through chemical deposition of water solutions and cadmium sulphide quantum dots were formed through hot-injection technique. The article discusses the results of surface investigations with the use of atomic force microscopy, Raman spectroscopy and photoluminescence measurements.

  1. The study of metal sulphide nanomaterials obtained by chemical bath deposition and hot-injection technique

    International Nuclear Information System (INIS)

    Maraeva, E V; Alexandrova, O A; Levitskiy, V S; Mazing, D S; Moshnikov, V A; Shupta, A A; Spivak, Yu M; Forostyanaya, N A; Maskaeva, L N; Markov, V Ph; Tulenin, S S

    2015-01-01

    In this study lead sulphide – cadmium sulphide based layers were obtained through chemical deposition of water solutions and cadmium sulphide quantum dots were formed through hot-injection technique. The article discusses the results of surface investigations with the use of atomic force microscopy, Raman spectroscopy and photoluminescence measurements. (paper)

  2. A comparative study of CdS thin films deposited by different techniques

    Energy Technology Data Exchange (ETDEWEB)

    Pérez-Hernández, G., E-mail: german.perez@ujat.mx [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Pantoja-Enríquez, J. [Centro de Investigación y Desarrollo Tecnológico en Energías Renovables, UNICACH, Libramiento Norte No 1150, Tuxtla Gutiérrez, Chiapas 29039 (Mexico); Escobar-Morales, B. [Instituto Tecnológico de Cancún, Avenida Kábah Km 3, Cancún, Quintana Roo 77500 (Mexico); Martinez-Hernández, D.; Díaz-Flores, L.L.; Ricardez-Jiménez, C. [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Mathews, N.R.; Mathew, X. [Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos 62580 (Mexico)

    2013-05-01

    Cadmium sulfide thin-films were deposited on glass slides and SnO{sub 2}:F coated glass substrates by chemical bath deposition, sputtering and close-spaced sublimation techniques. The films were studied for the structural and opto-electronic properties after annealing in an ambient identical to that employed in the fabrication of CdTe/CdS devices. Quantum efficiency of the CdTe/CdS solar cells fabricated with CdS buffer films prepared by the three methods were investigated to understand the role of CdS film preparation method on the blue response of the devices. The higher blue response observed for the devices fabricated with chemical bath deposited CdS film is discussed. - Highlights: ► CdS films were prepared by different techniques. ► Role of CdS on the blue response of device was studied. ► Structural and optical properties of CdS were analyzed. ► Chemically deposited CdS has high blue transmittance. ► CdS deposition method influences diffusion of S and Te.

  3. Influence of surface morphology and microstructure on performance of CVD tungsten coating under fusion transient thermal loads

    Energy Technology Data Exchange (ETDEWEB)

    Lian, Youyun, E-mail: lianyy@swip.ac.cn [Southwestern Institute of Physics, Chengdu (China); Liu, Xiang; Wang, Jianbao; Feng, Fan [Southwestern Institute of Physics, Chengdu (China); Lv, Yanwei; Song, Jiupeng [China National R& D Center for Tungsten Technology, Xiamen Tungsten Co. Ltd, 361026 Xiamen (China); Chen, Jiming [Southwestern Institute of Physics, Chengdu (China)

    2016-12-30

    Highlights: • Thick CVD-W coatingswere deposited at a rapid growth rate. • The polished CVD-W coatings have highly textured structure and exhibited a very strong preferred orientation. • The polished CVD tungsten coatings show superior thermal shock resistance as compared with that of the as-deposited coatings. • The crack formation of the polished CVD-W was almost suppressed at an elevated temperature. - Abstract: Thick tungsten coatings have been deposited by chemical vapor deposition (CVD) at a rapid growth rate. A series of tungsten coatings with different thickness and surface morphology were prepared. The surface morphology, microstructure and preferred orientation of the CVD tungsten coatings were investigated. Thermal shock analyses were performed by using an electron beam facility to study the influence of the surface morphology and the microstructure on the thermal shock resistance of the CVD tungsten coatings. Repetitive (100 pulses) ELMs-like thermal shock loads were applied at various temperatures between room temperature and 600 °C with pulse duration of 1 ms and an absorbed power density of up to 1 GW/m{sup 2}. The results of the tests demonstrated that the specific surface morphology and columnar crystal structure of the CVD tungsten have significant influence on the surface cracking threshold and crack propagation of the materials. The CVD tungsten coatings with a polished surface show superior thermal shock resistance as compared with that of the as-deposited coatings with a rough surface.

  4. Thermodynamic study of CVD-ZrO2 phase diagrams

    International Nuclear Information System (INIS)

    Torres-Huerta, A.M.; Vargas-Garcia, J.R.; Dominguez-Crespo, M.A.; Romero-Serrano, J.A.

    2009-01-01

    Chemical vapor deposition (CVD) of zirconium oxide (ZrO 2 ) from zirconium acetylacetonate Zr(acac) 4 has been thermodynamically investigated using the Gibbs' free energy minimization method and the FACTSAGE program. Thermodynamic data Cp o , ΔH o and S o for Zr(acac) 4 have been estimated using the Meghreblian-Crawford-Parr and Benson methods because they are not available in the literature. The effect of deposition parameters, such as temperature and pressure, on the extension of the region where pure ZrO 2 can be deposited was analyzed. The results are presented as calculated CVD stability diagrams. The phase diagrams showed two zones, one of them corresponds to pure monoclinic phase of ZrO 2 and the other one corresponds to a mix of monoclinic phase of ZrO 2 and graphite carbon.

  5. Development of a CVD silica coating for UK advanced gas-cooled nuclear reactor fuel pins

    International Nuclear Information System (INIS)

    Bennett, M.J.; Houlton, M.R.; Moore, D.A.; Foster, A.I.; Swidzinski, M.A.M.

    1983-04-01

    Vapour deposited silica coatings could extend the life of the 20% Cr/25% Ni niobium stabilised (20/25/Nb) stainless steel fuel cladding of the UK advanced gas cooled reactors. A CVD coating process developed originally to be undertaken at atmospheric pressure has now been adapted for operation at reduced pressure. Trials on the LP CVD process have been pursued to the production scale using commercial equipment. The effectiveness of the LP CVD silica coatings in providing protection to 20/25/Nb steel surfaces against oxidation and carbonaceous deposition has been evaluated. (author)

  6. Multilayered and composite PVD-CVD coatings in cemented carbides manufacture

    International Nuclear Information System (INIS)

    Glushkov, V.N.; Anikeev, A.I.; Anikin, V.N.; Vereshchaka, A.S.

    2001-01-01

    Carbide cutting tools with wear-resistant coatings deposited by CVD process are widely employed in mechanical engineering to ensure a substantially longer service life of tool systems. However, the relatively high temperature and long time of the process make the substrate decarburise and, as a result, the bend strength and performance characteristics of a tool decrease. The present study suggests the problem of deteriorated strength of CVD-coated carbide tools be solved by the development of a technology that combines arc-PVD and CVD processes to deposit multilayered coatings of titanium and aluminium compounds. (author)

  7. Characterization of defects in hydrogenated amorphous silicon deposited on different substrates by capacitance techniques

    International Nuclear Information System (INIS)

    Darwich, R.; Roca i Cabarrocas, P.

    2011-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films deposited on crystalline silicon and Corning glass substrate were analyzed using different capacitance techniques. The distribution of localized states and some electronic properties were studied using the temperature, frequency and bias dependence of the Schottky barrier capacitance and deep level transient spectroscopy. Our results show that the distribution of the gap states depends on the type of substrate. We have found that the films deposited on c-Si substrate represent only one positively charged or prerelaxed neutral deep state and one interface state, while the films deposited on glass substrate have one interface state and three types of deep defect states, positively or prerelaxed neutral, neutral and negatively charged.

  8. CVD-graphene for low equivalent series resistance in rGO/CVD-graphene/Ni-based supercapacitors

    Science.gov (United States)

    Kwon, Young Hwi; Kumar, Sunil; Bae, Joonho; Seo, Yongho

    2018-05-01

    Reduced equivalent series resistance (ESR) is necessary, particularly at a high current density, for high performance supercapacitors, and the interface resistance between the current collector and electrode material is one of the main components of ESR. In this report, we have optimized chemical vapor deposition-grown graphene (CVD-G) on a current collector (Ni-foil) using reduced graphene oxide as an active electrode material to fabricate an electric double layer capacitor with reduced ESR. The CVD-G was grown at different cooling rates—20 °C min‑1, 40 °C min‑1 and 100 °C min‑1—to determine the optimum conditions. The lowest ESR, 0.38 Ω, was obtained for a cell with a 100 °C min‑1 cooling rate, while the sample without a CVD-G interlayer exhibited 0.80 Ω. The CVD-G interlayer-based supercapacitors exhibited fast CD characteristics with high scan rates up to 10 Vs‑1 due to low ESR. The specific capacitances deposited with CVD-G were in the range of 145.6 F g‑1–213.8 F g‑1 at a voltage scan rate of 0.05 V s‑1. A quasi-rectangular behavior was observed in the cyclic voltammetry curves, even at very high scan rates of 50 and 100 V s‑1, for the cell with optimized CVD-G at higher cooling rates, i.e. 100 °C min‑1.

  9. Deposition of porous cathodes using plasma spray technique for reduced-temperature SOFCs

    Energy Technology Data Exchange (ETDEWEB)

    Jankovic, J.; Hui, S.; Roller, J.; Kesler, O.; Xie, Y.; Maric, R.; Ghosh, D. [National Research Council of Canada, Vancouver, BC (Canada). Inst. for Fuel Cell Innovation

    2005-07-01

    Current techniques for Solid Oxide Fuel Cell (SOFC) materials deposition are often expensive and time-consuming. Plasma-spraying techniques provide higher deposition rates, short processing times and control over porosity and composition during deposition. Optimum plasma spraying for lanthanum based cathode materials were discussed. Plasma-spraying was used to deposit cathode materials onto ceramic and stainless steel substrates to obtain highly porous structures. Lanthanum cathode materials with composition of La{sub 0.6}Sr{sub 0.4}C{sub 0.2}Fe{sub 0.8}O{sub 3} were employed in the powder form. The powder was prepared from powder precursors with different power formers and binder levels, or from produced single-phase lanthanum powders. The (La{sub 0.8}Sr{sub 0.2}){sub 0.98}MnO{sub 3} cathode material was also processed for comparison purposes. The deposition process was developed to obtain coatings with good bond strength, porosity, film thickness and residual stresses. The phase and microstructure of deposited materials were characterized using X-Ray Diffraction and Scanning Electron Microscopy (SEM). It was concluded that good flow of the powder precursors is achieved by spraying 50-100 um particle size powders and using vibrating feeders. Further processing of the spraying powders was recommended. It was noted that oxide precursors showed greater reactivity among the precursors. The best precursor reactivity and coating morphology was obtained using 40 volume per cent of graphite pore former, incorporated into the precursor mixture during wet ball milling. It was concluded that higher power levels and larger distances between the plasma gun and the substrate result in coatings with the highest porosities and best phase compositions. 5 refs., 1 tab., 6 figs.

  10. CVD-grown horizontally aligned single-walled carbon nanotubes: synthesis routes and growth mechanisms.

    Science.gov (United States)

    Ibrahim, Imad; Bachmatiuk, Alicja; Warner, Jamie H; Büchner, Bernd; Cuniberti, Gianaurelio; Rümmeli, Mark H

    2012-07-09

    Single-walled carbon nanotubes (SWCNTs) have attractive electrical and physical properties, which make them very promising for use in various applications. For some applications however, in particular those involving electronics, SWCNTs need to be synthesized with a high degree of control with respect to yield, length, alignment, diameter, and chirality. With this in mind, a great deal of effort is being directed to the precision control of vertically and horizontally aligned nanotubes. In this review the focus is on the latter, horizontally aligned tubes grown by chemical vapor deposition (CVD). The reader is provided with an in-depth review of the established vapor deposition orientation techniques. Detailed discussions on the characterization routes, growth parameters, and growth mechanisms are also provided. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. The CVD ZrB2 as a selective solar absorber

    Science.gov (United States)

    Randich, E.; Allred, D. D.

    Coatings of ZrB2 and TiB2 for photothermal solar absorber applications were prepared using chemical vapor deposition (CVD) techniques. Oxidation tests suggest a maximum temperature limit for air exposure of 600 K for TiB2 and 800 K for Z4B2. Both materials exhibit innate spectral selectivity with emittance at 375 K ranging from 0.06 to 0.09 and solar absorptance for ZrB2 ranging from 0.67 to 0.77 and solar absorptance for TiB2 ranging from 0.46 to 0.58. ZrB2 has better solar selectivity and more desirable oxidation behavior than TiB2. A 0.071 micrometer antireflection coating of Si3N4 deposited on the ZrB2 coating leads to an increase in absorptance from 0.77 to 0.93, while the emittance remains unchanged.

  12. Tailoring properties of lossy-mode resonance optical fiber sensors with atomic layer deposition technique

    Science.gov (United States)

    Kosiel, Kamil; Koba, Marcin; Masiewicz, Marcin; Śmietana, Mateusz

    2018-06-01

    The paper shows application of atomic layer deposition (ALD) technique as a tool for tailoring sensorial properties of lossy-mode-resonance (LMR)-based optical fiber sensors. Hafnium dioxide (HfO2), zirconium dioxide (ZrO2), and tantalum oxide (TaxOy), as high-refractive-index dielectrics that are particularly convenient for LMR-sensor fabrication, were deposited by low-temperature (100 °C) ALD ensuring safe conditions for thermally vulnerable fibers. Applicability of HfO2 and ZrO2 overlays, deposited with ALD-related atomic level thickness accuracy for fabrication of LMR-sensors with controlled sensorial properties was presented. Additionally, for the first time according to our best knowledge, the double-layer overlay composed of two different materials - silicon nitride (SixNy) and TaxOy - is presented for the LMR fiber sensors. The thin films of such overlay were deposited by two different techniques - PECVD (the SixNy) and ALD (the TaxOy). Such approach ensures fast overlay fabrication and at the same time facility for resonant wavelength tuning, yielding devices with satisfactory sensorial properties.

  13. The Influence of Various Deposition Techniques on the Photoelectrochemical Properties of the Titanium Dioxide Thin Fil

    Czech Academy of Sciences Publication Activity Database

    Morozová, Magdalena; Klusoň, Petr; Dzik, P.; Veselý, M.; Baudyš, M.; Krýsa, J.; Šolcová, Olga

    2013-01-01

    Roč. 65, č. 3 (2013), s. 452-458 ISSN 0928-0707 R&D Projects: GA TA ČR TA01020804 Grant - others:GA ČR(CZ) GP104/09/P165 Institutional support: RVO:67985858 Keywords : titanium dioxide * photoelectrochemical properties * deposition techniques Subject RIV: CI - Industrial Chemistry, Chemical Engineering Impact factor: 1.547, year: 2013

  14. The influence of inhalation technique on Technegas particle deposition and image appearance in normal volunteers

    International Nuclear Information System (INIS)

    Lloyd, J.J.; James, J.M.; Shields, R.A.; Testa, H.J.

    1994-01-01

    The aim of this work was to investigate the influence of inhalation technique on Technegas image quality and on fractional particle deposition. This was investigated in six normal volunteers using three different types of breathing pattern. Fractional deposition was determined by analysis of dynamic gamma camera images acquired during Technegas administration. Static lung images were subsequently acquired and assessed independently by three experienced observers. High-quality images were obtained in all cases although slight differences were noted. The images produced using a slow deep inspiration with a breath hold (i.e. the standard method) were of more uniform texture and also had the least gradient in activity from apex to base. The converse was true for a rapid inhalation technique. The average fractional deposition per breath was 55%, but this varied between individuals and with breathing pattern, being most influenced by the total duration of a breath. We conclude that for patient studies the standard inhalation technique is best, although variation to suit individual patients would be acceptable. (orig./MG)

  15. Drastically Enhanced High-Rate Performance of Carbon-Coated LiFePO4 Nanorods Using a Green Chemical Vapor Deposition (CVD) Method for Lithium Ion Battery: A Selective Carbon Coating Process.

    Science.gov (United States)

    Tian, Ruiyuan; Liu, Haiqiang; Jiang, Yi; Chen, Jiankun; Tan, Xinghua; Liu, Guangyao; Zhang, Lina; Gu, Xiaohua; Guo, Yanjun; Wang, Hanfu; Sun, Lianfeng; Chu, Weiguo

    2015-06-03

    Application of LiFePO4 (LFP) to large current power supplies is greatly hindered by its poor electrical conductivity (10(-9) S cm(-1)) and sluggish Li+ transport. Carbon coating is considered to be necessary for improving its interparticle electronic conductivity and thus electrochemical performance. Here, we proposed a novel, green, low cost and controllable CVD approach using solid glucose as carbon source which can be extended to most cathode and anode materials in need of carbon coating. Hydrothermally synthesized LFP nanorods with optimized thickness of carbon coated by this recipe are shown to have superb high-rate performance, high energy, and power densities, as well as long high-rate cycle lifetime. For 200 C (18s) charge and discharge, the discharge capacity and voltage are 89.69 mAh g(-1) and 3.030 V, respectively, and the energy and power densities are 271.80 Wh kg(-1) and 54.36 kW kg(-1), respectively. The capacity retention of 93.0%, and the energy and power density retention of 93.6% after 500 cycles at 100 C were achieved. Compared to the conventional carbon coating through direct mixing with glucose (or other organic substances) followed by annealing (DMGA), the carbon phase coated using this CVD recipe is of higher quality and better uniformity. Undoubtedly, this approach enhances significantly the electrochemical performance of high power LFP and thus broadens greatly the prospect of its applications to large current power supplies such as electric and hybrid electric vehicles.

  16. Optical characterization of single-crystal diamond grown by DC arc plasma jet CVD

    Science.gov (United States)

    Hei, Li-fu; Zhao, Yun; Wei, Jun-jun; Liu, Jin-long; Li, Cheng-ming; Lü, Fan-xiu

    2017-12-01

    Optical centers of single-crystal diamond grown by DC arc plasma jet chemical vapor deposition (CVD) were examined using a low-temperature photoluminescence (PL) technique. The results show that most of the nitrogen-vacancy (NV) complexes are present as NV- centers, although some H2 and H3 centers and B-aggregates are also present in the single-crystal diamond because of nitrogen aggregation resulting from high N2 incorporation and the high mobility of vacancies under growth temperatures of 950-1000°C. Furthermore, emissions of radiation-induced defects were also detected at 389, 467.5, 550, and 588.6 nm in the PL spectra. The reason for the formation of these radiation-induced defects is not clear. Although a Ni-based alloy was used during the diamond growth, Ni-related emissions were not detected in the PL spectra. In addition, the silicon-vacancy (Si-V)-related emission line at 737 nm, which has been observed in the spectra of many previously reported microwave plasma chemical vapor deposition (MPCVD) synthetic diamonds, was absent in the PL spectra of the single-crystal diamond prepared in this work. The high density of NV- centers, along with the absence of Ni-related defects and Si-V centers, makes the single-crystal diamond grown by DC arc plasma jet CVD a promising material for applications in quantum computing.

  17. Investigation of chemical vapour deposition diamond detectors by X-ray micro-beam induced current and X-ray micro-beam induced luminescence techniques

    International Nuclear Information System (INIS)

    Olivero, P.; Manfredotti, C.; Vittone, E.; Fizzotti, F.; Paolini, C.; Lo Giudice, A.; Barrett, R.; Tucoulou, R.

    2004-01-01

    Tracking detectors have become an important ingredient in high-energy physics experiments. In order to survive the harsh detection environment of the large hadron collider (LHC), trackers need to have special properties. They must be radiation hard, provide fast collection of charge, be as thin as possible and remove heat from readout electronics. The unique properties of diamond allow it to fulfill these requirements. In this work we present an investigation of the charge transport and luminescence properties of 'detector grade' artificial chemical vapour deposition (CVD) diamond devices developed within the CERN RD42 collaboration, performed by means of X-ray micro-beam induced current collection (XBICC) and X-ray micro-beam induced luminescence (XBIL) techniques. XBICC technique allows quantitative estimates of the transport parameters of the material to be evaluated and mapped with micrometric spatial resolution. In particular, the high resolution and sensitivity of the technique has allowed a quantitative study of the inhomogeneity of the charge transport parameter defined as the product of mobility and lifetime for both electron and holes. XBIL represents a technique complementary to ion beam induced luminescence (IBIL), which has already been used by our group, since X-ray energy loss profile in the material is different from that of MeV ions. X-ray induced luminescence maps have been performed simultaneously with induced photocurrent maps, to correlate charge transport and induced luminescence properties of diamond. Simultaneous XBICC and XBIL maps exhibit features of partial complementarity that have been interpreted on the basis of considerations on radiative and non-radiative recombination processes which compete with charge transport efficiency

  18. Synthesis of Colloidal ZnO Nanoparticles and Deposit of Thin Films by Spin Coating Technique

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2013-01-01

    Full Text Available ZnO colloidal nanoparticles were synthesized, the average size of these nanoparticles is around 25 nm with hexagonal form. It was noted that stabilization depends directly on the purifying process; in this work we do not change the nature of the solution as a difference from Meulekamp's method, and we do not use any alkanes to remove the byproducts; only a centrifuge to remove those ones was used, thereby the stabilization increases up to 24 days. It is observed from the results that only three times of washing is enough to prevent the rapid aging process. The effect of annealing process on the composition, size, and geometrical shape of ZnO nanoparticles was studied in order to know whether the annealing process affects the crystallization and growth of the nanoparticles. After the synthesis, the colloidal nanoparticles were deposited by spin coating technique showing that the formed nanoparticles have no uniformly deposition pattern. But is possible to deposit those ones in glass substrates. A possible deposition process of the nanoparticles is proposed.

  19. Effect of the spray application technique on the deposition of entomopathogenic nematodes in vegetables.

    Science.gov (United States)

    Brusselman, Eva; Beck, Bert; Pollet, Sabien; Temmerman, Femke; Spanoghe, Pieter; Moens, Maurice; Nuyttens, David

    2012-03-01

    The present study compared entomopathogenic nematode delivery at the base of savoy cabbage and cauliflower, at the lower side of savoy cabbage and cauliflower leaves and in leek stems and the ground deposition using a five-nozzle spray boom equipped with an ISO 08 flat fan, an air induction flat fan and Twinjet spray nozzles. Additionally, an air support system and a row application system were evaluated. Approximately 40% of the applied nematodes did not reach the foot of the cabbage plants. The use of an air support system or a row application system improved nematode deposition at the savoy cabbage base. Relative nematode deposition on the lower side of savoy cabbage leaves was 27.20%, while only 2.64% of the applied nematodes reached the lower side of cauliflower leaves. After spraying leek with a standard boom, a low relative nematode deposition (26.64%) was measured in the leek stem. Nozzle type affected the distribution of nematodes in droplet spots. Nozzle type has a minor effect on the number of entomopathogenic nematodes delivered on difficult-to-reach targets. The use of modified spray application techniques directing the spray to the target site are necessary to increase the chances of contact of entomopathogenic nematodes with their target. Copyright © 2011 Society of Chemical Industry.

  20. Effect of spray application technique on spray deposition in greenhouse strawberries and tomatoes.

    Science.gov (United States)

    Braekman, Pascal; Foque, Dieter; Messens, Winy; Van Labeke, Marie-Christine; Pieters, Jan G; Nuyttens, David

    2010-02-01

    Increasingly, Flemish greenhouse growers are using spray booms instead of spray guns to apply plant protection products. Although the advantages of spray booms are well known, growers still have many questions concerning nozzle choice and settings. Spray deposition using a vertical spray boom in tomatoes and strawberries was compared with reference spray equipment. Five different settings of nozzle type, size and pressure were tested with the spray boom. In general, the standard vertical spray boom performed better than the reference spray equipment in strawberries (spray gun) and in tomatoes (air-assisted sprayer). Nozzle type and settings significantly affected spray deposition and crop penetration. Highest overall deposits in strawberries were achieved using air-inclusion or extended-range nozzles. In tomatoes, the extended-range nozzles and the twin air-inclusion nozzles performed best. Using smaller-size extended-range nozzles above the recommended pressure range resulted in lower deposits, especially inside the crop canopy. The use of a vertical spray boom is a promising technique for applying plant protection products in a safe and efficient way in tomatoes and strawberries, and nozzle choice and setting should be carefully considered.

  1. 25th anniversary article: CVD polymers: a new paradigm for surface modification and device fabrication.

    Science.gov (United States)

    Coclite, Anna Maria; Howden, Rachel M; Borrelli, David C; Petruczok, Christy D; Yang, Rong; Yagüe, Jose Luis; Ugur, Asli; Chen, Nan; Lee, Sunghwan; Jo, Won Jun; Liu, Andong; Wang, Xiaoxue; Gleason, Karen K

    2013-10-11

    Well-adhered, conformal, thin (polymers can be achieved on virtually any substrate: organic, inorganic, rigid, flexible, planar, three-dimensional, dense, or porous. In CVD polymerization, the monomer(s) are delivered to the surface through the vapor phase and then undergo simultaneous polymerization and thin film formation. By eliminating the need to dissolve macromolecules, CVD enables insoluble polymers to be coated and prevents solvent damage to the substrate. CVD film growth proceeds from the substrate up, allowing for interfacial engineering, real-time monitoring, and thickness control. Initiated-CVD shows successful results in terms of rationally designed micro- and nanoengineered materials to control molecular interactions at material surfaces. The success of oxidative-CVD is mainly demonstrated for the deposition of organic conducting and semiconducting polymers. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Synthesis and Optimization of MWCNTs on Co-Ni/MgO by Thermal CVD

    Directory of Open Access Journals (Sweden)

    H. Ryu

    2008-01-01

    Full Text Available Multiwalled carbon nanotubes (MWCNTs were prepared by the thermal chemical vapor deposition (CVD technique. Monometallic and bimetallic Co and Ni combinations were used as a catalyst on MgO support. The mixer of H2/C2H2 was used as a carbon source. The prepared CNTs were found to possess different shapes, morphologies, and sizes. Maximum yield was found for 50% Co (MgO: 50% and Ni: 0% catalyst at 600°C. Scanning electron microscopy (SEM and high-resolution transmission electron microscopy (HRTEM techniques were used for structural analysis. Raman spectra were taken to investigate the quality and crystalline perfection of the prepared CNTs. The ratio of D- and G-bands (ID/IG was measured from these spectra.

  3. A measure of the interfacial shear strength between SiC(CVD)/B(CVD) filament--aluminum matrix by fragmentation method

    International Nuclear Information System (INIS)

    Jiang, Y.Q.; Chen, X.J.; Yang, D.M.; Fei, X.; Pan, J.

    1993-01-01

    The tensile specimens used are of dog-bone shape and consist of single axial SiC (CVD) /B (CVD) filament processed by CVD and embedded in a LD-2 aluminum alloy. Model composite specimens have been fabricated by a high pressure squeeze casting technique. This paper describes the application of an Acoustic Emission Technique for locating the position of fiber breaks and thus determining the length distribution of fiber fragments resulting when a composite specimen containing a single fiber is loaded to failure. The critical lengths (minimal lengths) are checked by Corrosion Method

  4. Simple method for the calculation and use of CVD phase diagrams with applications to the Ti-B-Cl-H system, 1200 to 8000K

    International Nuclear Information System (INIS)

    Randich, E.; Gerlach, T.M.

    1980-03-01

    A simple method for calculating multi-component gas-solid equilibrium phase diagrams for chemical vapor deposition (CVD) systems is presented. The method proceeds in three steps: dtermination of stable solid assemblages, evaluation of gas-solid stability relations, and calcuation of conventional phase diagrams using a new free energy minimization technique. The phase diagrams can be used to determine (1) bulk compositions and phase fields accessible by CVD techniques; (2) expected condensed phases for various starting gas mixtures; and (3) maximum equilibrium yields for specific CVD process variables. The three step thermodynamic method is used to calcuate phase diagrams for the example CVD system Ti-B-Cl-H at 1200 and 800 0 K. Examples of applications of the diagrams for yield optimization and experimental accessibility studies are presented and discussed. Experimental verification of the TiB 2 + Gas/Gas phase field boundary at 1200 0 K, H/Cl = 1 confirms the calculated boundary and indicates that equilibrium is nearly and rapidly approached under laboratory conditions

  5. Electrocatalysts with platinum, cobalt and nickel preparations by mechanical alloyed and CVD for the reaction of oxygen reduction; Electrocatalizadores a base de platino, cobalto y niquel preparados por aleado mecanico y CVD para la reaccion de reduccion de oxigeno

    Energy Technology Data Exchange (ETDEWEB)

    Garcia C, M A [ININ, 52750 La Marquesa, Estado de Mexico (Mexico)

    2008-07-01

    In this research, the molecular oxygen reduction reaction (ORR) was investigated on electrocatalysts of Co, Ni, Pt and their alloys CoNi, PtCo, PtNi and PtCoNi by using H{sub 2}SO{sub 4} 0.5 and KOH 0.5 M solutions as electrolytes. The electrocatalysts were synthesized by Mechanical Alloying (MA) and Chemical Vapor Deposition (CVD) processes. For MA, metallic powders were processed during 20 h of milling in a high energy SPEX 8000 mill. For CVD, a hot-wall reactor was utilized and Co, Ni and Pt acetilactetonates were used as precursors. Films were deposited at a total pressure of 1 torr and temperatures of 400-450 C. Electrocatalysts were characterized by X-Ray Diffraction (XRD). Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Energy Dispersive X-Ray Spectroscopy (EDS). Electrocatalysts prepared by mechanical alloying showed a homogeneously dispersed agglomeration of particles with nano metric size. Electrocatalysts obtained by CVD showed, in some cases, non uniform films, with particles of nano metric size, as well. The electrocatalytic performance was evaluated by using the Rotating Disk Electrode technique (RDE). Electrocatalysts prepared by MA showed higher activity than those obtained by CVD. All electrocatalysts were evaluated in alkaline media. Only electrocatalysts containing Pt were evaluated in acid media, because those materials with Co, Ni and their alloys showed instability in acidic media. Most electrocatalysts followed a mechanism for the ORR producing a certain proportion of H{sub 2}O{sub 2}. All electrocatalysts, exhibited a fair or good electrocatalytic activity in comparison with other similar reported materials. It was found that MA and CVD are appropriate processes to prepare electrocatalysts for the ORR with particles of nano metric size and performing with an acceptable catalytic activity. PtCoNi 70-23-7% by MA and PtCoNi-CVD electrocatalysts showed the highest activity in alkaline media, while in acidic

  6. Metallographic techniques for evaluation of Thermal Barrier Coatings produced by Electron Beam Physical Vapor Deposition

    International Nuclear Information System (INIS)

    Kelly, Matthew; Singh, Jogender; Todd, Judith; Copley, Steven; Wolfe, Douglas

    2008-01-01

    Thermal Barrier Coatings (TBC) produced by Electron Beam Physical Vapor Deposition (EB-PVD) are primarily applied to critical hot section turbine components. EB-PVD TBC for turbine applications exhibit a complicated structure of porous ceramic columns separated by voids that offers mechanical compliance. Currently there are no standard evaluation methods for evaluating EB-PVD TBC structure quantitatively. This paper proposes a metallographic method for preparing samples and evaluating techniques to quantitatively measure structure. TBC samples were produced and evaluated with the proposed metallographic technique and digital image analysis for columnar grain size and relative intercolumnar porosity. Incorporation of the proposed evaluation technique will increase knowledge of the relation between processing parameters and material properties by incorporating a structural link. Application of this evaluation method will directly benefit areas of quality control, microstructural model development, and reduced development time for process scaling

  7. Fabrication of Vertically Aligned CNT Composite for Membrane Applications Using Chemical Vapor Deposition through In Situ Polymerization

    Directory of Open Access Journals (Sweden)

    Munir Mohammad

    2013-01-01

    Full Text Available We report the fabrication of vertically aligned carbon nanotubes (CNT composite using thermal chemical vapor deposition (CVD. A forest of vertically aligned CNTs was grown using catalytic CVD. Fluorocarbon polymer, films were deposited in the spaces between vertically aligned MWCNTs using thermal CVD apparatus developed in-house. The excessive polymer top layer was etched by exposing the sample to water plasma. Infrared spectroscopy confirmed the attachment of functional groups to CNTs. Alignment of CNTs, deposition of polymer and postetched specimens were analyzed by field emission scanning electron microscope (FE-SEM. Uniform distribution of monomodel vertically aligned CNTs embedded in the deposited polymer matrix was observed in the micrograph. Observed uniform distribution otherwise is not possible using conventional techniques such as spin coating.

  8. Modulating the Optoelectronic Properties of Silver Nanowires Films: Effect of Capping Agent and Deposition Technique.

    Science.gov (United States)

    Lopez-Diaz, D; Merino, C; Velázquez, M M

    2015-11-11

    Silver nanowires 90 nm in diameter and 9 µm in length have been synthesized using different capping agents: polyvinyl pyrrolidone (PVP) and alkyl thiol of different chain lengths. The nanowire structure is not influenced by the displacement of PVP by alkyl thiols, although alkyl thiols modify the lateral aggregation of nanowires. We examined the effect of the capping agent and the deposition method on the optical and electrical properties of films prepared by Spray and the Langmuir-Schaefer methodologies. Our results revealed that nanowires capped with PVP and C8-thiol present the best optoelectronic properties. By using different deposition techniques and by modifying the nanowire surface density, we can modulate the optoelectronic properties of films. This strategy allows obtaining films with the optoelectronic properties required to manufacture touch screens and electromagnetic shielding.

  9. Modulating the Optoelectronic Properties of Silver Nanowires Films: Effect of Capping Agent and Deposition Technique

    Directory of Open Access Journals (Sweden)

    D. Lopez-Diaz

    2015-11-01

    Full Text Available Silver nanowires 90 nm in diameter and 9 µm in length have been synthesized using different capping agents: polyvinyl pyrrolidone (PVP and alkyl thiol of different chain lengths. The nanowire structure is not influenced by the displacement of PVP by alkyl thiols, although alkyl thiols modify the lateral aggregation of nanowires. We examined the effect of the capping agent and the deposition method on the optical and electrical properties of films prepared by Spray and the Langmuir-Schaefer methodologies. Our results revealed that nanowires capped with PVP and C8-thiol present the best optoelectronic properties. By using different deposition techniques and by modifying the nanowire surface density, we can modulate the optoelectronic properties of films. This strategy allows obtaining films with the optoelectronic properties required to manufacture touch screens and electromagnetic shielding.

  10. Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

    Energy Technology Data Exchange (ETDEWEB)

    Zaleta-Alejandre, E.; Balderas-Xicoténcatl, R. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Arrieta, M.L. Pérez [Universidad Autónoma de Zacatecas, Unidad Académica de Física, Calzada Solidaridad esq. Paseo, La Bufa s/n, C.P. 98060, Zacatecas, México (Mexico); Meza-Rocha, A.N.; Rivera-Álvarez, Z. [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico); Falcony, C., E-mail: cfalcony@fis.cinvestav.mx [Centro de Investigación y de Estudios Avanzados-IPN, Departamento de Física, , Apdo. Postal 14-470, Del, Gustavo A. Madero, C.P. 07000, México, D.F. (Mexico)

    2013-10-01

    Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min{sup −1} at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min{sup −1} were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s.

  11. Synthesis of conductive semi-transparent silver films deposited by a Pneumatically-Assisted Ultrasonic Spray Pyrolysis Technique

    International Nuclear Information System (INIS)

    Zaleta-Alejandre, E.; Balderas-Xicoténcatl, R.; Arrieta, M.L. Pérez; Meza-Rocha, A.N.; Rivera-Álvarez, Z.; Falcony, C.

    2013-01-01

    Highlights: • We deposited metallic silver films without post-deposition annealing. • The spray pyrolysis technique is of low cost and scalable for industrial applications. • We obtained deposition rate of 60 nm min −1 at 300 °C. • The average resistivity was 1E−7 Ω m. • Semi-transparent silver films were obtained at 350 °C and deposition time of 45 s. -- Abstract: The synthesis and characterization of nanostructured silver films deposited on corning glass by a deposition technique called Pneumatically-Assisted Ultrasonic Spray Pyrolysis are reported. Silver nitrate and triethanolamine were used as silver precursor and reducer agent, respectively. The substrate temperatures during deposition were in the range of 300–450 °C and the deposition times from 30 to 240 s. The deposited films are polycrystalline with cubic face-centered structure, and crystalline grain size less than 30 nm. Deposition rates up to 600 Å min −1 were obtained at substrate temperature as low as 300 °C. The electrical, optical, and morphological properties of these films are also reported. Semi-transparent conductive silver films were obtained at 350 °C with a deposition time of 45 s

  12. Determination of Redistribution of Erosion/Deposition Rate in Cultivated Area Using 137Cs Technique

    International Nuclear Information System (INIS)

    Nita Suhartini; Syamsul Abbas RAS; Barokah A; Ali Arman L

    2004-01-01

    The aim of the research is to determine the rate of redistribution of erosion/deposition in cultivated area. The application of 137 Cs technique was carried out at cultivated area in Bojong - Ciawi, with slope less than 10 o and slope length of about 2 km. A reference site was selected at the top of the slope, and this site is flat, open and covered with grass. Two sites in the cultivated area were selected as study site namely LU-I ( 15 x 25 ) m with the distance of 1000 m from the top, and LU-II (17.5 x 20) m with the distance of 1300 m from the top. Sampling of soil at reference site was done by using scraper (20 x 50) cm, while sampling at study site by using core sampling (di = 7 cm). Soil samples were brought to the laboratorium for preparation and analysis of 137 Cs content. Preparation are including of drying, weighing the total dry, sieving and crushing. Analysis of 137 Cs content was done using multi channel analyzer (MCA) that connected to high purity germanium (HPGe), at 661 keV, and the minimum counting time of 16 hours. To estimate the erosion/deposit rate, two mathematical model were used, namely Proportional Model (PM) and Mass Balance Model 1 (MBM1). The result for application of 137 Cs technique showed that MBM1 gives somewhat higher value for deposit rate and somewhat lower value for erosion than PM. Land use - I (LU-I) of Bojong - Ciawi was suffering from erosion with the erosion rate from 1 t/(ha.y) to 13 t/(ha.y), and LU-II has deposit rate from 1 t/(ha.y) to 50 t/(ha.y). (author)

  13. NEXAFS Study of the Annealing Effect on the Local Structure of FIB-CVD DLC

    International Nuclear Information System (INIS)

    Saikubo, Akihiko; Kato, Yuri; Igaki, Jun-ya; Kanda, Kazuhiro; Matsui, Shinji; Kometani, Reo

    2007-01-01

    Annealing effect on the local structure of diamond like carbon (DLC) formed by focused ion beam-chemical vapor deposition (FIB-CVD) was investigated by the measurement of near edge x-ray absorption fine structure (NEXAFS) and energy dispersive x-ray (EDX) spectra. Carbon K edge absorption NEXAFS spectrum of FIB-CVD DLC was measured in the energy range of 275-320 eV. In order to obtain the information on the location of the gallium in the depth direction, incidence angle dependence of NEXAFS spectrum was measured in the incident angle range from 0 deg. to 60 deg. . The peak intensity corresponding to the resonance transition of 1s→σ* originating from carbon-gallium increased from the FIB-CVD DLC annealed at 200 deg. C to the FIB-CVD DLC annealed at 400 deg. C and decreased from that at 400 deg. C to that at 600 deg. C. Especially, the intensity of this peak remarkably enhanced in the NEXAFS spectrum of the FIB-CVD DLC annealed at 400 deg. C at the incident angle of 60 deg. . On the contrary, the peak intensity corresponding to the resonance transition of 1s→π* originating from carbon double bonding of emission spectrum decreased from the FIB-CVD DLC annealed at 200 deg. C to that at 400 deg. C and increased from that at 400 deg. C to that at 600 deg. C. Gallium concentration in the FIB-CVD DLC decreased from ≅2.2% of the as-deposited FIB-CVD DLC to ≅1.5% of the FIB-CVD DLC annealed at 600 deg. C from the elementary analysis using EDX. Both experimental results indicated that gallium atom departed from FIB-CVD DLC by annealing at the temperature of 600 deg. C

  14. Nanocomposite metal amorphous-carbon thin films deposited by hybrid PVD and PECVD technique.

    Science.gov (United States)

    Teixeira, V; Soares, P; Martins, A J; Carneiro, J; Cerqueira, F

    2009-07-01

    Carbon based films can combine the properties of solid lubricating graphite structure and hard diamond crystal structure, i.e., high hardness, chemical inertness, high thermal conductivity and optical transparency without the crystalline structure of diamond. Issues of fundamental importance associated with nanocarbon coatings are reducing stress, improving adhesion and compatibility with substrates. In this work new nanocomposite coatings with improved toughness based in nanocrystalline phases of metals and ceramics embedded in amorphous carbon matrix are being developed within the frame of a research project: nc-MeNxCy/a-C(Me) with Me = Mo, Si, Al, Ti, etc. Carbide forming metal/carbon (Me/C) composite films with Me = Mo, W or Ti possess appropriate properties to overcome the limitation of pure DLC films. These novel coating architectures will be adopted with the objective to decrease residual stress, improve adherence and fracture toughness, obtain low friction coefficient and high wear-resistance. Nanocomposite DLC's films were deposited by hybrid technique using a PVD-Physically Vapor Deposition (magnetron sputtering) and Plasma Enhanced Chemical Vapor Deposition (PECVD), by the use of CH4 gas. The parameters varied were: deposition time, substrate temperature (180 degrees C) and dopant (Si + Mo) of the amorphous carbon matrix. All the depositions were made on silicon wafers and steel substrates precoated with a silicon inter-layer. The characterisation of the film's physico-mechanical properties will be presented in order to understand the influence of the deposition parameters and metal content used within the a-C matrix in the thin film properties. Film microstructure and film hybridization state was characterized by Raman Spectroscopy. In order to characterize morphology SEM and AFM will be used. Film composition was measured by Energy-Dispersive X-ray analysis (EDS) and by X-ray photoelectron spectroscopy (XPS). The contact angle for the produced DLC's on

  15. Electrocatalysts with platinum, cobalt and nickel preparations by mechanical alloyed and CVD for the reaction of oxygen reduction

    International Nuclear Information System (INIS)

    Garcia C, M. A.

    2008-01-01

    In this research, the molecular oxygen reduction reaction (ORR) was investigated on electrocatalysts of Co, Ni, Pt and their alloys CoNi, PtCo, PtNi and PtCoNi by using H 2 SO 4 0.5 and KOH 0.5 M solutions as electrolytes. The electrocatalysts were synthesized by Mechanical Alloying (MA) and Chemical Vapor Deposition (CVD) processes. For MA, metallic powders were processed during 20 h of milling in a high energy SPEX 8000 mill. For CVD, a hot-wall reactor was utilized and Co, Ni and Pt acetilactetonates were used as precursors. Films were deposited at a total pressure of 1 torr and temperatures of 400-450 C. Electrocatalysts were characterized by X-Ray Diffraction (XRD). Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Energy Dispersive X-Ray Spectroscopy (EDS). Electrocatalysts prepared by mechanical alloying showed a homogeneously dispersed agglomeration of particles with nano metric size. Electrocatalysts obtained by CVD showed, in some cases, non uniform films, with particles of nano metric size, as well. The electrocatalytic performance was evaluated by using the Rotating Disk Electrode technique (RDE). Electrocatalysts prepared by MA showed higher activity than those obtained by CVD. All electrocatalysts were evaluated in alkaline media. Only electrocatalysts containing Pt were evaluated in acid media, because those materials with Co, Ni and their alloys showed instability in acidic media. Most electrocatalysts followed a mechanism for the ORR producing a certain proportion of H 2 O 2 . All electrocatalysts, exhibited a fair or good electrocatalytic activity in comparison with other similar reported materials. It was found that MA and CVD are appropriate processes to prepare electrocatalysts for the ORR with particles of nano metric size and performing with an acceptable catalytic activity. PtCoNi 70-23-7% by MA and PtCoNi-CVD electrocatalysts showed the highest activity in alkaline media, while in acidic electrolyte PtCoNi 70

  16. Synthesis of graphene on nickel films by CVD method using methane

    International Nuclear Information System (INIS)

    Castro, Manuela O. de; Liebold-Ribeiro, Yvonne; Barros, Eduardo B.; Salomao, Francisco C.C.; Mendes Filho, Josue; Souza Filho, Antonio G.; Chesman, Carlos

    2011-01-01

    Full text: Nanomaterials have opened up many possibilities for groundbreaking innovations in various technologies of modern society. One key example is graphene, which is composed of one-atom-thick sheet of sp2-bonded carbon atoms, arranged in a hexagonal symmetry. However, real world applications of graphene require well-established and large synthesis techniques. The so-called Chemical Vapor Deposition (CVD) is one of the most promising method for synthesizing graphene. The general idea of this technique is to dissolve carbon atoms inside a transition metal melt at a certain temperature, then allowing the dissolved carbon to precipitate at lower temperatures as single layer graphene (SLG). In the present work, we used the CVD method and methane gas as carbon source for the synthesis of graphene on silicon (Si) substrates (300nm thermal oxide) covered with sputtered nickel (Ni) films as catalyst. In order to achieve large-area and defect-free graphene sheets the influence of the different growth parameters (growth temperature and time, gas flow of methane, film thickness and grain size of Ni) on quality and quantity of graphene growth were studied. The obtained graphene films were transferred to a silicon substrate by the polymer coating process, using polymethyl-methacrylate (PMMA) as coating. In order to characterize the transferred graphene we used Scanning Electron Microscopy (SEM), Raman Spectroscopy, Optical Microscopy and Atomic Force Microscopy (AFM). The results show the influence of CVD process parameters on the quality and quantity of graphene growth in our experimental conditions. Acknowledgments: The authors thank Brazilian agencies CNPq and FUNCAP for financial support and Alfonso Reina (MIT, USA) for helpful discussions. (author)

  17. CVD carbon powders modified by ball milling

    Directory of Open Access Journals (Sweden)

    Kazmierczak Tomasz

    2015-09-01

    Full Text Available Carbon powders produced using a plasma assisted chemical vapor deposition (CVD methods are an interesting subject of research. One of the most interesting methods of synthesizing these powders is using radio frequency plasma. This method, originally used in deposition of carbon films containing different sp2/sp3 ratios, also makes possible to produce carbon structures in the form of powder. Results of research related to the mechanical modification of these powders have been presented. The powders were modified using a planetary ball mill with varying parameters, such as milling speed, time, ball/powder mass ratio and additional liquids. Changes in morphology and particle sizes were measured using scanning electron microscopy and dynamic light scattering. Phase composition was analyzed using Raman spectroscopy. The influence of individual parameters on the modification outcome was estimated using statistical method. The research proved that the size of obtained powders is mostly influenced by the milling speed and the amount of balls. Powders tend to form conglomerates sized up to hundreds of micrometers. Additionally, it is possible to obtain nanopowders with the size around 100 nm. Furthermore, application of additional liquid, i.e. water in the process reduces the graphitization of the powder, which takes place during dry milling.

  18. CVD transfer-free graphene for sensing applications

    Directory of Open Access Journals (Sweden)

    Chiara Schiattarella

    2017-05-01

    Full Text Available The sp2 carbon-based allotropes have been extensively exploited for the realization of gas sensors in the recent years because of their high conductivity and large specific surface area. A study on graphene that was synthetized by means of a novel transfer-free fabrication approach and is employed as sensing material is herein presented. Multilayer graphene was deposited by chemical vapour deposition (CVD mediated by CMOS-compatible Mo. The utilized technique takes advantage of the absence of damage or contamination of the synthesized graphene, because there is no need for the transfer onto a substrate. Moreover, a proper pre-patterning of the Mo catalyst allows one to obtain graphene films with different shapes and dimensions. The sensing properties of the material have been investigated by exposing the devices to NO2, NH3 and CO, which have been selected because they are well-known hazardous substances. The concentration ranges have been chosen according to the conventional monitoring of these gases. The measurements have been carried out in humid N2 environment, setting the flow rate at 500 sccm, the temperature at 25 °C and the relative humidity (RH at 50%. An increase of the conductance response has been recorded upon exposure towards NO2, whereas a decrease of the signal has been detected towards NH3. The material appears totally insensitive towards CO. Finally, the sensing selectivity has been proven by evaluating and comparing the degree of adsorption and the interaction energies for NO2 and NH3 on graphene. The direct-growth approach for the synthesis of graphene opens a promising path towards diverse applicative scenarios, including the straightforward integration in electronic devices.

  19. CVD transfer-free graphene for sensing applications.

    Science.gov (United States)

    Schiattarella, Chiara; Vollebregt, Sten; Polichetti, Tiziana; Alfano, Brigida; Massera, Ettore; Miglietta, Maria Lucia; Di Francia, Girolamo; Sarro, Pasqualina Maria

    2017-01-01

    The sp 2 carbon-based allotropes have been extensively exploited for the realization of gas sensors in the recent years because of their high conductivity and large specific surface area. A study on graphene that was synthetized by means of a novel transfer-free fabrication approach and is employed as sensing material is herein presented. Multilayer graphene was deposited by chemical vapour deposition (CVD) mediated by CMOS-compatible Mo. The utilized technique takes advantage of the absence of damage or contamination of the synthesized graphene, because there is no need for the transfer onto a substrate. Moreover, a proper pre-patterning of the Mo catalyst allows one to obtain graphene films with different shapes and dimensions. The sensing properties of the material have been investigated by exposing the devices to NO 2 , NH 3 and CO, which have been selected because they are well-known hazardous substances. The concentration ranges have been chosen according to the conventional monitoring of these gases. The measurements have been carried out in humid N 2 environment, setting the flow rate at 500 sccm, the temperature at 25 °C and the relative humidity (RH) at 50%. An increase of the conductance response has been recorded upon exposure towards NO 2 , whereas a decrease of the signal has been detected towards NH 3 . The material appears totally insensitive towards CO. Finally, the sensing selectivity has been proven by evaluating and comparing the degree of adsorption and the interaction energies for NO 2 and NH 3 on graphene. The direct-growth approach for the synthesis of graphene opens a promising path towards diverse applicative scenarios, including the straightforward integration in electronic devices.

  20. Cold-walled UHV/CVD batch reactor for the growth of Si1_x/Gex layers

    DEFF Research Database (Denmark)

    Thomsen, Erik Vilain; Christensen, Carsten; Andersen, C.R.

    1997-01-01

    A novel cold-walled, lamp-heated, ultrahigh vacuum chemical vapor deposition (UHV/CVD) batch system for the growth of SiGe layers is presented. This system combines the batch capability of the standard UHV/CVD furnace with the temperature processing available in rapid thermal processing (Rm...

  1. Synthesis of nanostructured SiC using the pulsed laser deposition technique

    International Nuclear Information System (INIS)

    Zhang, H.X.; Feng, P.X.; Makarov, V.; Weiner, B.R.; Morell, G.

    2009-01-01

    We report the new results on the direct synthesis of nanostructured silicon carbide (SiC) materials using the pulsed laser deposition technique. Scanning electron microscopy images revealed that SiC nanoholes, nanosprouts, nanowires, and nanoneedles were obtained. The crystallographic structure, chemical composition, and bond structure of the nanoscale SiC materials were investigated using X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering spectroscopy. The transverse optical mode and longitudinal optical mode in Raman spectra were found to become sharper as the substrate temperature was increased, while the material structure evolved from amorphous to crystalline

  2. Site control technique for quantum dots using electron beam induced deposition

    Energy Technology Data Exchange (ETDEWEB)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi [Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minami-saitama, Saitama 3458501 (Japan)

    2014-05-15

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement.

  3. Site control technique for quantum dots using electron beam induced deposition

    International Nuclear Information System (INIS)

    Iizuka, Kanji; Jung, JaeHun; Yokota, Hiroshi

    2014-01-01

    To develop simple and high throughput sit definition technique for quantum dots (QDs), the electron beam induced deposition (EBID) method was used as desorption guide of phosphorus atoms form InP substrate. As the results one or a few indium (In) droplets (DLs) were created in the carbon grid pattern by thermal annealing at a temperature of 450°C for 10 min in the ultra high vacuum condition. The size of In DLs was larger than QDs, but arsenide DLs by molecular beam in growth chamber emitted wavelength of 1.028μm at 50K by photoluminescence measurement

  4. Selective CVD tungsten on silicon implanted SiO/sub 2/

    International Nuclear Information System (INIS)

    Hennessy, W.A.; Ghezzo, M.; Wilson, R.H.; Bakhru, H.

    1988-01-01

    The application range of selective CVD tungsten is extended by its coupling to the ion implantation of insulating materials. This article documents the results of selective CVD tungsten using silicon implanted into SiO/sub 2/ to nucleate the tungsten growth. The role of implant does, energy, and surface preparation in achieving nucleation are described. SEM micrographs are presented to demonstrate the selectivity of this process. Measurements of the tungsten film thickness and sheet resistance are provided for each of the experimental variants corresponding to successful deposition. RBS and XPS analysis are discussed in terms of characterizing the tungsten/oxide interface and to evaluate the role of the silicon implant in the CVD tungsten mechanism. Utilizing this method a desired metallization pattern can be readily defined with lithography and ion implantation, and accurately replicated with a layer of CVD tungsten. This approach avoids problems usually associated with blanket deposition and pattern transfer, which are particularly troublesome for submicron VLSI technology

  5. CVD Graphene/Ni Interface Evolution in Sulfuric Electrolyte

    DEFF Research Database (Denmark)

    Yivlialin, Rossella; Bussetti, Gianlorenzo; Duò, Lamberto

    2018-01-01

    Systems comprising single and multilayer graphene deposited on metals and immersed in acid environments have been investigated, with the aim of elucidating the mechanisms involved, for instance, in hydrogen production or metal protection from corrosion. In this work, a relevant system, namely...... chemical vapor deposited (CVD) multilayer graphene/Ni (MLGr/Ni), is studied when immersed in a diluted sulfuric electrolyte. The MLGr/Ni electrochemical and morphological properties are studied in situ and interpreted in light of the highly oriented pyrolytic graphite (HOPG) electrode behavior, when...... immersed in the same electrolyte. Following this interpretative framework, the dominant role of the Ni substrate in hydrogen production is clarified....

  6. Radiation monitoring with CVD diamonds and PIN diodes at BaBar

    Energy Technology Data Exchange (ETDEWEB)

    Bruinsma, M. [University of California Irvine, Irvine, CA 92697 (United States); Burchat, P. [Stanford University, Stanford, CA 94305-4060 (United States); Curry, S. [University of California Irvine, Irvine, CA 92697 (United States)], E-mail: scurry@slac.stanford.edu; Edwards, A.J. [Stanford University, Stanford, CA 94305-4060 (United States); Kagan, H.; Kass, R. [Ohio State University, Columbus, OH 43210 (United States); Kirkby, D. [University of California Irvine, Irvine, CA 92697 (United States); Majewski, S.; Petersen, B.A. [Stanford University, Stanford, CA 94305-4060 (United States)

    2007-12-11

    The BaBar experiment at the Stanford Linear Accelerator Center has been using two polycrystalline chemical vapor deposition (pCVD) diamonds and 12 silicon PIN diodes for radiation monitoring and protection of the Silicon Vertex Tracker (SVT). We have used the pCVD diamonds for more than 3 years, and the PIN diodes for 7 years. We will describe the SVT and SVT radiation monitoring system as well as the operational difficulties and radiation damage effects on the PIN diodes and pCVD diamonds in a high-energy physics environment.

  7. Microstructure and surface morphology of YSZ thin films deposited by e-beam technique

    International Nuclear Information System (INIS)

    Laukaitis, G.; Dudonis, J.; Milcius, D.

    2008-01-01

    In present study yttrium-stabilized zirconia (YSZ) thin films were deposited on optical quartz (amorphous SiO 2 ), porous Ni-YSZ and crystalline Alloy 600 (Fe-Ni-Cr) substrates using e-beam deposition technique and controlling technological parameters: substrate temperature and electron gun power which influence thin-film deposition mechanism. X-ray diffraction, scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to investigate how thin-film structure and surface morphology depend on these parameters. It was found that the crystallite size, roughness and growth mechanism of YSZ thin films are influenced by electron gun power. To clarify the experimental results, YSZ thin-film formation as well evolution of surface roughness at its initial growing stages were analyzed. The evolution of surface roughness could be explained by the processes of surface mobility of adatoms and coalescence of islands. The analysis of these experimental results explain that surface roughness dependence on substrate temperature and electron gun power non-monotonous which could result from diffusivity of adatoms and the amount of atomic clusters in the gas stream of evaporated material

  8. Bone repair after osteotomy with diamond burs and CVD ultrasonic tips – histological study in rats

    OpenAIRE

    Matuda, Fábio S.; Pagani, Clovis; Miranda, Carolina B.; Crema, Aline A. S.; Brentel, Aline S.; Carvalho, Yasmin R.

    2010-01-01

    This study histologically evaluated the behavior of bone tissue of rats submitted to osteotomy with conventional diamond burs in high speed and a new ultrasonic diamond tips system (CVD – Chemical Vapor Deposition), at different study periods. The study was conducted on 24 Wistar rats. Osteotomy was performed on the posterior paws of each rat, with utilization of diamond burs in high speed under thorough water cooling at the right paw, and CVD tips at the left paw. Animals were killed a...

  9. Tribological Characteristics and Applications of Superhard Coatings: CVD Diamond, DLC, and c-BN

    Science.gov (United States)

    Miyoshi, Kazuhisa; Murakawa, Masao; Watanabe, Shuichi; Takeuchi, Sadao; Wu, Richard L. C.

    1999-01-01

    Results of fundamental research on the tribological properties of chemical-vapor-deposited (CVD) diamond, diamondlike carbon, and cubic boron nitride films in sliding contact with CVD diamond in ultrahigh vacuum, dry nitrogen, humid air, and water are discussed. Furthermore, the actual and potential applications of the three different superhard coatings in the field of tribology technology, particularly for wear parts and tools, are reviewed.

  10. CVD Diamond, DLC, and c-BN Coatings for Solid Film Lubrication

    Science.gov (United States)

    Miyoshi, Kazuhisa

    1998-01-01

    When the main criteria for judging coating performance were coefficient of friction and wear rate, which had to be less than 0.1 and 10(exp -6) mm(exp 3)/N-m, respectively, carbon- and nitrogen-ion-implanted, fine-grain CVD diamond and DLC ion beam deposited on fine-grain CVD diamond met the requirements regardless of environment (vacuum, nitrogen, and air).

  11. Enhanced surface functionality via plasma modification and plasma deposition techniques to create more biologically relevant materials

    Science.gov (United States)

    Shearer, Jeffrey C.

    Functionalizing nanoparticles and other unusually shaped substrates to create more biologically relevant materials has become central to a wide range of research programs. One of the primary challenges in this field is creating highly functionalized surfaces without modifying the underlying bulk material. Traditional wet chemistry techniques utilize thin film depositions to functionalize nanomaterials with oxygen and nitrogen containing functional groups, such as --OH and --NHx. These functional groups can serve to create surfaces that are amenable to cell adhesion or can act as reactive groups for further attachment of larger structures, such as macromolecules or antiviral agents. Additional layers, such as SiO2, are often added between the nanomaterial and the functionalized coating to act as a barrier films, adhesion layers, and to increase overall hydrophilicity. However, some wet chemistry techniques can damage the bulk material during processing. This dissertation examines the use of plasma processing as an alternative method for producing these highly functionalized surfaces on nanoparticles and polymeric scaffolds through the use of plasma modification and plasma enhanced chemical vapor deposition techniques. Specifically, this dissertation will focus on (1) plasma deposition of SiO2 barrier films on nanoparticle substrates; (2) surface functionalization of amine and alcohol groups through (a) plasma co-polymerization and (b) plasma modification; and (3) the design and construction of plasma hardware to facilitate plasma processing of nanoparticles and polymeric scaffolds. The body of work presented herein first examines the fabrication of composite nanoparticles by plasma processing. SiOxC y and hexylamine films were coated onto TiO2 nanoparticles to demonstrate enhanced water dispersion properties. Continuous wave and pulsed allyl alcohol plasmas were used to produce highly functionalized Fe2 O3 supported nanoparticles. Specifically, film composition was

  12. FABRICATION OF CNTS BY TOLUENE DECOMPOSITION IN A NEW REACTOR BASED ON AN ATMOSPHERIC PRESSURE PLASMA JET COUPLED TO A CVD SYSTEM

    Directory of Open Access Journals (Sweden)

    FELIPE RAMÍREZ-HERNÁNDEZ

    2017-03-01

    Full Text Available Here, we present a method to produce carbon nanotubes (CNTs based on the coupling between two conventional techniques used for the preparation of nanostructures: an arc-jet as a source of plasma and a chemical vapour deposition (CVD system. We call this system as an “atmospheric pressure plasma (APP-enhanced CVD” (APPE-CVD. This reactor was used to grow CNTs on non-flat aluminosilicate substrates by the decomposition of toluene (carbon source in the presence of ferrocene (as a catalyst. Both, CNTs and by-products of carbon were collected at three different temperatures (780, 820 and 860 °C in different regions of the APPE-CVD system. These samples were analysed by thermogravimetric analysis (TGA and DTG, scanning electron microscopy (SEM and Raman spectroscopy in order to determine the effect of APP on the thermal stability of the as-grown CNTs. It was found that the amount of metal catalyst in the synthesised CNTs is reduced by applying APP, being 820 °C the optimal temperature to produce CNTs with a high yield and carbon purity (95 wt. %. In contrast, when the synthesis temperature was fixed at 780 °C or 860 °C, amorphous carbon or CNTs with different structural defects, respectively, was formed through APEE-CVD reactor. We recommended the use of non-flat aluminosilicate particles as supports to increase CNT yield and facilitate the removal of deposits from the substrate surface. The approach that we implemented (to synthesise CNTs by using the APPE-CVD reactor may be useful to produce these nanostructures on a gram-scale for use in basic studies. The approach may also be scaled up for mass production.

  13. Ion-substituted calcium phosphate coatings deposited by plasma-assisted techniques: A review.

    Science.gov (United States)

    Graziani, Gabriela; Bianchi, Michele; Sassoni, Enrico; Russo, Alessandro; Marcacci, Maurilio

    2017-05-01

    One of the main critical aspects behind the failure or success of an implant resides in its ability to fast bond with the surrounding bone. To boost osseointegration, the ideal implant material should exhibit composition and structure similar to those of biological apatite. To this aim, the most common approach is to coat the implant surface with a coating of hydroxyapatite (HA), resembling the main component of mineralized tissues. However, bone apatite is a non-stoichiometric, multi-substituted poorly-crystalline apatite, containing significant amounts of foreign ions, with high biological relevance. Ion-substituted HAs can be deposited by so called "wet methods", which are however poorly reproducible and hardly industrially feasible; at the same time bioactive coatings realized by plasma assisted method, interesting for industrial applications, are generally made of stoichiometric (i.e. un-substituted) HA. In this work, the literature concerning plasma-assisted deposition methods used to deposit ion-substituted HA was reviewed and the last advances in this field discussed. The ions taken into exam are those present in mineralized tissues and possibly having biological relevance. Notably, literature about this topic is scarce, especially relating to in vivo animal and clinical trials; further on, available studies evaluate the performance of substituted coatings from different points of view (mechanical properties, bone growth, coating dissolution, etc.) which hinders a proper evaluation of the real efficacy of ion-doped HA in promoting bone regeneration, compared to stoichiometric HA. Moreover, results obtained for plasma sprayed coatings (which is the only method currently employed for deposition at the industrial scale) were collected and compared to those of novel plasma-assisted techniques, that are expected to overcome its limitations. Data so far available on the topic were discussed to highlight advantages, limitations and possible perspectives of these

  14. CVD of solid oxides in porous substrates for ceramic membrane modification

    NARCIS (Netherlands)

    Lin, Y.S.; Lin, Y.S.; Burggraaf, Anthonie; Burggraaf, A.J.

    1992-01-01

    The deposition of yttria-doped zirconia has been experimented systematically in various types of porous ceramic substrates by a modified chemical vapor deposition (CVD) process operating in an opposing reactant geometry using water vapor and corresponding metal chloride vapors as reactants. The

  15. Microdroplet deposition through a film-free laser forward printing technique

    Energy Technology Data Exchange (ETDEWEB)

    Patrascioiu, A.; Fernandez-Pradas, J.M.; Morenza, J.L. [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Serra, P., E-mail: pserra@ub.edu [Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona (Spain)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer Circular droplets are obtained for a wide range of focusing depths at fixed energy. Black-Right-Pointing-Pointer Focusing depth variation study reveals two abrupt transitions in droplet diameter. Black-Right-Pointing-Pointer Liquid ejection mechanism is mediated by two types of jets of different origin. Black-Right-Pointing-Pointer Evolution of jets depends on the focusing depth accounting for the seen transitions. - Abstract: A recently developed film-free laser forward microprinting technique allows printing transparent and weakly absorbing liquids with high resolution and reproducibility. Its operating principle consists in the tight focusing of ultrashort laser pulses inside the liquid, and near its free surface, such that all the laser energy is absorbed in a small region around the beam waist. A cavitation bubble is then created inside the liquid, whose subsequent expansion results into the ejection of liquid. The collection of the ejected liquid on a substrate leads to the deposition of micron-sized droplets. In this work, we investigate a relevant process parameter of the technique, namely the laser focusing depth, and its influence on the morphology of the deposited droplets. The study reveals that for a fixed laser pulse energy there exists a relatively wide range of focusing depths at which circular and uniform droplets can be printed. The process of liquid ejection is also investigated. Time-resolved images reveal that liquid ejection proceeds through the formation of two kinds of jets which display clearly differentiated dynamics, and which could provide an interpretation for the dependence observed between the morphology of the deposited droplets and the laser focusing depth.

  16. Microdroplet deposition through a film-free laser forward printing technique

    International Nuclear Information System (INIS)

    Patrascioiu, A.; Fernández-Pradas, J.M.; Morenza, J.L.; Serra, P.

    2012-01-01

    Highlights: ► Circular droplets are obtained for a wide range of focusing depths at fixed energy. ► Focusing depth variation study reveals two abrupt transitions in droplet diameter. ► Liquid ejection mechanism is mediated by two types of jets of different origin. ► Evolution of jets depends on the focusing depth accounting for the seen transitions. - Abstract: A recently developed film-free laser forward microprinting technique allows printing transparent and weakly absorbing liquids with high resolution and reproducibility. Its operating principle consists in the tight focusing of ultrashort laser pulses inside the liquid, and near its free surface, such that all the laser energy is absorbed in a small region around the beam waist. A cavitation bubble is then created inside the liquid, whose subsequent expansion results into the ejection of liquid. The collection of the ejected liquid on a substrate leads to the deposition of micron-sized droplets. In this work, we investigate a relevant process parameter of the technique, namely the laser focusing depth, and its influence on the morphology of the deposited droplets. The study reveals that for a fixed laser pulse energy there exists a relatively wide range of focusing depths at which circular and uniform droplets can be printed. The process of liquid ejection is also investigated. Time-resolved images reveal that liquid ejection proceeds through the formation of two kinds of jets which display clearly differentiated dynamics, and which could provide an interpretation for the dependence observed between the morphology of the deposited droplets and the laser focusing depth.

  17. A simple method to deposit palladium doped SnO2 thin films using plasma enhanced chemical vapor deposition technique

    International Nuclear Information System (INIS)

    Kim, Young Soon; Wahab, Rizwan; Shin, Hyung-Shik; Ansari, S. G.; Ansari, Z. A.

    2010-01-01

    This work presents a simple method to deposit palladium doped tin oxide (SnO 2 ) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl 4 ) was used as precursor and oxygen (O 2 , 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C 5 HF 6 O 2 ) 2 ) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd 2 Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 mΩ cm as a function of deposition temperature from 400 to 600 deg. C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature.

  18. Oxidation protection of multilayer CVD SiC/B/SiC coatings for 3D C/SiC composite

    International Nuclear Information System (INIS)

    Liu Yongsheng; Cheng Laifei; Zhang Litong; Wu Shoujun; Li Duo; Xu Yongdong

    2007-01-01

    A CVD boron coating was introduced between two CVD SiC coating layers. EDS and XRD results showed that the CVD B coating was a boron crystal without other impurity elements. SEM results indicated that the CVD B coating was a flake-like or column-like crystal with a compact cross-section. The crack width in the CVD SiC coating deposited on CVD B is smaller than that in a CVD SiC coating deposited on CVD SiC coating. After oxidation at 700 deg. C and 1000 deg. C, XRD results indicated that the coating was covered by product B 2 O 3 or B 2 O 3 .xSiO 2 film. The cracks were sealed as observed by SEM. There was a large amount of flake-like material on hybrid coating surface after oxidation at 1300 deg. C. Oxidation weight loss and residual flexural strength results showed that hybrid SiC/B/SiC multilayer coating provided better oxidation protection for C/SiC composite than a three layer CVD SiC coating at temperatures from 700 deg. C to 1000 deg. C for 600 min, but worse oxidation protection above 1000 deg. C due to the large amount of volatilization of B 2 O 3 or B 2 O 3 .xSiO 2

  19. Electrochemical applications of CVD diamond

    International Nuclear Information System (INIS)

    Pastor-Moreno, Gustavo

    2002-01-01

    Diamond technology has claimed an important role in industry since non-expensive methods of synthesis such as chemical vapour deposition allow to elaborate cheap polycrystalline diamond. This fact has increased the interest in the scientific community due to the outstanding properties of diamond. Since Pleskov published in 1987 the first paper in electrochemistry, many researchers around the world have studied different aspects of diamond electrochemistry such as reactivity, electrical structure, etc. As part of this worldwide interest these studies reveal new information about diamond electrodes. These studies report investigation of diamond electrodes characterized using structural techniques like scanning electrode microscopy and Raman spectroscopy. A new electrochemical theory based on surface states is presented that explains the metal and the semiconductor behaviour in terms of the doping level of the diamond electrode. In an effort to characterise the properties of diamond electrodes the band edges for hydrogen and oxygen terminated surface are located in organic solvent, hence avoiding possible interference that are present in aqueous solution. The determination of the band edges is performed by Mott-Schottky studies. These allow the calculation of the flat band potential and therefore the band edges. Additional cyclic voltammetric studies are presented for both types of surface termination. Mott-Schottky data and cyclic voltammograms are compared and explained in terms of the band edge localisation. Non-degenerately p-type semiconductor behaviour is presented for hydrogen terminated boron doped diamond. Graphitic surface states on oxidised surface boron doped diamond are responsible for the electrochemistry of redox couples that posses similar energy. Using the simple redox couple 1,4-benzoquinone effect of surface termination on the chemical behaviour of diamond is presented. Hydrogen sublayers in diamond electrodes seem to play an important role for the

  20. Laser-Directed CVD 3D Printing System for Refractory Metal Propulsion Hardware, Phase II, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — In this work, Ultramet is developing a three-dimensional (3D) laser-directed chemical vapor deposition (CVD) additive manufacturing system to build free-form...

  1. Advanced deposition model for thermal activated chemical vapor deposition

    Science.gov (United States)

    Cai, Dang

    Thermal Activated Chemical Vapor Deposition (TACVD) is defined as the formation of a stable solid product on a heated substrate surface from chemical reactions and/or dissociation of gaseous reactants in an activated environment. It has become an essential process for producing solid film, bulk material, coating, fibers, powders and monolithic components. Global market of CVD products has reached multi billions dollars for each year. In the recent years CVD process has been extensively used to manufacture semiconductors and other electronic components such as polysilicon, AlN and GaN. Extensive research effort has been directed to improve deposition quality and throughput. To obtain fast and high quality deposition, operational conditions such as temperature, pressure, fluid velocity and species concentration and geometry conditions such as source-substrate distance need to be well controlled in a CVD system. This thesis will focus on design of CVD processes through understanding the transport and reaction phenomena in the growth reactor. Since the in situ monitor is almost impossible for CVD reactor, many industrial resources have been expended to determine the optimum design by semi-empirical methods and trial-and-error procedures. This approach has allowed the achievement of improvements in the deposition sequence, but begins to show its limitations, as this method cannot always fulfill the more and more stringent specifications of the industry. To resolve this problem, numerical simulation is widely used in studying the growth techniques. The difficulty of numerical simulation of TACVD crystal growth process lies in the simulation of gas phase and surface reactions, especially the latter one, due to the fact that very limited kinetic information is available in the open literature. In this thesis, an advanced deposition model was developed to study the multi-component fluid flow, homogeneous gas phase reactions inside the reactor chamber, heterogeneous surface

  2. Assessment of CVD diamond as a thermoluminescence dosemeter material

    International Nuclear Information System (INIS)

    Borchi, E.; Furetta, C.; Leroy, C.

    1996-01-01

    Diamond has a low atomic number (Z = 6) and is therefore essentially soft tissue (Z = 7.4) equivalent. As such, diamond is an attractive material for applications in dosimetry in which the radiation absorption in the sensor material should be as close as possible to that of soft tissue. Synthetic diamond prepared by chemical vapour deposition (CVD) offers an attractive option for this application. The aim of the present work is to report results on the thermoluminescence (TL) properties of CVD diamond samples. The annealing procedures, the linearity of the TL response as a function of dose, a short-term fading experiment and some kinetic properties have been investigated and are reported here. (Author)

  3. A Bayesian method to estimate the neutron response matrix of a single crystal CVD diamond detector

    International Nuclear Information System (INIS)

    Reginatto, Marcel; Araque, Jorge Guerrero; Nolte, Ralf; Zbořil, Miroslav; Zimbal, Andreas; Gagnon-Moisan, Francis

    2015-01-01

    Detectors made from artificial chemical vapor deposition (CVD) single crystal diamond are very promising candidates for applications where high resolution neutron spectrometry in very high neutron fluxes is required, for example in fusion research. We propose a Bayesian method to estimate the neutron response function of the detector for a continuous range of neutron energies (in our case, 10 MeV ≤ E n ≤ 16 MeV) based on a few measurements with quasi-monoenergetic neutrons. This method is needed because a complete set of measurements is not available and the alternative approach of using responses based on Monte Carlo calculations is not feasible. Our approach uses Bayesian signal-background separation techniques and radial basis function interpolation methods. We present the analysis of data measured at the PTB accelerator facility PIAF. The method is quite general and it can be applied to other particle detectors with similar characteristics

  4. Study of the structural evolutions of crystalline tungsten oxide films prepared using hot-filament CVD

    International Nuclear Information System (INIS)

    Feng, P X; Wang, X P; Zhang, H X; Yang, B Q; Wang, Z B; Gonzalez-BerrIos, A; Morell, G; Weiner, B

    2007-01-01

    Structural evolutions of tungsten oxide(WO 3 ) samples on different substrates are studied using Raman spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, x-ray diffraction and x-ray photoelectron spectroscopy. The WO 3 samples are prepared using hot-filament CVD techniques. The focus of the study is on the evolutions of nano structures at different stages following deposition time. The experimental measurements reveal evolutions of the surface structures from uniform film to fractal-like structures, and eventually to nano particles, and crystalline structures from mono (0 1 0) crystalline thin film to polycrystalline thick film developments. The effect of high temperature on the nanostructured WO 3 is also investigated. Well-aligned nanoscale WO 3 rod arrays are obtained at a substrate temperature of up to 1400 deg. C. Further increasing the substrate temperature yields microscale crystalline WO 3 particles

  5. Simulation and experimental approach to CVD-FBR aluminide coatings on ferritic steels under steam oxidation

    International Nuclear Information System (INIS)

    Leal, J.; Alcala, G.; Bolivar, F.J.; Sanchez, L.; Hierro, M.P.; Perez, F.J.

    2008-01-01

    The ferritic steels used to produce structural components for steam turbines are susceptible to strong corrosion and creep damage due to the extreme working conditions pushed to increase the process efficiency and to reduce pollutants release. The response of aluminide coatings on the P-92 ferritic steel, deposited by CVD-FBR, during oxidation in a simulated steam environment was studied. The analyses were performed at 650 deg. C in order to simulate the working conditions of a steam turbine, and 800 deg. C in order to produce a critical accelerated oxidation test. The Thermo-Calc software was used to predict the different solid phases that could be generated during the oxidation process, in both, coated and uncoated samples. In order to validate the thermodynamic results, the oxides scales produced during steam tests were characterized by different techniques such as XRD, SEM and EDS. The preliminary results obtained are discussed in the present work

  6. Structural Transformation upon Nitrogen Doping of Ultrananocrystalline Diamond Films by Microwave Plasma CVD

    Directory of Open Access Journals (Sweden)

    Chien-Chung Teng

    2009-01-01

    Full Text Available The molecular properties and surface morphology of undoped and N-doped ultra-nanocrystalline diamond (UNCD films deposited by microwave plasma CVD with addition of nitrogen are investigated with various spectroscopic techniques. The results of spatially resolved Raman scattering, ATR/FT-IR and XPS spectra show more amorphous and sp2/sp3 ratio characteristics in N-doped UNCD films. The surface morphology in AFM scans shows larger nanocrystalline diamond clusters in N-doped UNCD films. Incorporation of nitrogen into UNCD films has promoted an increase of amorphous sp2-bonded carbons in the grain boundaries and the size of nanocrystalline diamond grains that are well correlated to the reported enhancement of conductivity and structural changes of UNCD films.

  7. Controlled growth of CNT in mesoporous AAO through optimized conditions for membrane preparation and CVD operation

    Energy Technology Data Exchange (ETDEWEB)

    Ciambelli, P; Sarno, M; Leone, C; Sannino, D [Department of Chemical and Food Engineering, University of Salerno, I-84084 Fisciano (Italy); Arurault, L; Fontorbes, S; Datas, L; Lenormand, P; Le Blond Du Plouy, S, E-mail: msarno@unisa.it, E-mail: arurault@chimie.ups-tlse.fr [Universite de Toulouse, CIRIMAT, UPS/INPT/CNRS, LCMIE, F-31062 Toulouse Cedex 9 (France)

    2011-07-01

    Anodic aluminium oxide (RAAO) membranes with a mesoporous structure were prepared under strictly controlling experimental process conditions, and physically and chemically characterized by a wide range of experimental techniques. Commercial anodic aluminium oxide (CAAO) membranes were also investigated for comparison. We demonstrated that RAAO membranes have lower content of both water and phosphorus and showed better porosity shape than CAAO. The RAAO membranes were used for template growth of carbon nanotubes (CNT) inside its pores by ethylene chemical vapour deposition (CVD) in the absence of a catalyst. A composite material, containing one nanotube for each channel, having the same length as the membrane thickness and an external diameter close to the diameter of the membrane holes, was obtained. Yield, selectivity and quality of CNTs in terms of diameter, length and arrangement (i.e. number of tubes for each channel) were optimized by investigating the effect of changing the experimental conditions for the CVD process. We showed that upon thermal treatment RAAO membranes were made up of crystallized allotropic alumina phases, which govern the subsequent CNT growth, because of their catalytic activity, likely due to their Lewis acidity. The strict control of experimental conditions for membrane preparation and CNT growth allowed us to enhance the carbon structural order, which is a critical requisite for CNT application as a substitute for copper in novel nano-interconnects.

  8. Preparation and characterization of VOx nanorods using pulsed laser deposition technique

    International Nuclear Information System (INIS)

    Rama, N.; Senthil Kumar, E.; Ramachandra Rao, M.S.

    2009-01-01

    Full text: Vanadium oxide (VO x ) is one of the most functional oxides of the transition metal oxide family. This versatility comes because of the ability of Vanadium to exist as both monovalent and multivalent in these oxides. These oxides find potential usage in the field of thermochromism electrochromism catalysts, electrochemistry etc. especially in their nano-form because of their increased sensitivity to these applications. These nano-forms are usually prepared using conventional techniques such as solgel techniques, vapour phase transport, hydrothermal synthesis etc. In this work we have used pulsed laser deposition technique to fabricate vanadium oxide nanorods for the first time. The grown nanorods has a predominant VO 2 phase with a secondary phase of V 3 O 7 . The diameters of the rods were around 300 nm with Raman spectra showing all the group vibrations corresponding to VO x phase. The nanorods exhibited photoluminescence in the visible range due to the presence of oxygen defects. These results, including the mechanism of growth of these nanorods, will be discussed in detail. The existence of multivalence in these rods finds potential applications in electrochemistry while the visible photoluminescence in optical applications

  9. Tight comparison of Mg and Y thin film photocathodes obtained by the pulsed laser deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Lorusso, A. [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Solombrino, L. [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy); Chiadroni, E. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, 00044 Frascati (Italy); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping (Sweden); Perrone, A. [Dipartimento di Matematica e Fisica “E. De Giorgi”, Università del Salento and Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy)

    2016-11-11

    In this work Magnesium (Mg) and Yttrium (Y) thin films have been deposited on Copper (Cu) polycrystalline substrates by the pulsed laser ablation technique for photocathode application. Such metallic materials are studied for their interesting photoemission properties and are proposed as a good alternative to the Cu photocathode, which is generally used in radio-frequency guns. Mg and Y films were uniform with no substantial differences in morphology; a polycrystalline structure was found for both of them. Photoemission measurements of such cathodes based on thin films were performed, revealing a quantum efficiency higher than Cu bulk. Photoemission theory according to the three-step model of Spicer is invoked to explain the superior photoemission performance of Mg with respect to Y. - Highlights: • Mg and Y thin film photocathodes were successfully prepared by pulsed laser deposition. • Mg quantum efficiency is higher than Y, despite its higher work function. • The three-step model of Spicer justify the difference in quantum efficiency.

  10. Transparent conducting ZnO-CdO thin films deposited by e-beam evaporation technique

    Science.gov (United States)

    Mohamed, H. A.; Ali, H. M.; Mohamed, S. H.; Abd El-Raheem, M. M.

    2006-04-01

    Thin films of Zn{1-x} Cd{x}O with x = 0, 0.1, 0.2, 0.3, 0.4 and 0.5 at.% were deposited by electron-beam evaporation technique. It has been found that, for as-deposited films, both the transmittance and electrical resistivity decreased with increasing the Cd content. To improve the optical and electrical properties of these films, the effect of annealing temperature and time were taken into consideration for Zn{1-x} Cd{x}O film with x = 0.2. It was found that, the optical transmittance and the electrical conductivity were improved significantly with increasing the time of annealing. At fixed temperature of 300 °C, the transmittance increased with increasing the time of annealing and reached its maximum values of 81% in the visible region and 94% in the NIR region at annealing time of 120 min. The low electrical resistivity of 3.6 × 10-3 Ω cm was achieved at the same conditions. Other parameters named free carrier concentrations, refractive index, extinction coefficient, plasma frequency, and relaxation time were studied as a function of annealing temperature and time for 20% Cd content.

  11. CuFeO2 formation using fused deposition modeling 3D printing and sintering technique

    Science.gov (United States)

    Salea, A.; Dasaesamoh, A.; Prathumwan, R.; Kongkaew, T.; Subannajui, K.

    2017-09-01

    CuFeO2 is a metal oxide mineral material which is called delafossite. It can potentially be used as a chemical catalyst, and gas sensing material. There are methods to fabricate CuFeO2 such as chemical synthesis, sintering, sputtering, and chemical vapor deposition. In our work, CuFeO2 is prepared by Fused Deposition Modeling (FDM) 3D printing. The composite filament which composed of Cu and Fe elements is printed in three dimensions, and then sintered and annealed at high temperature to obtain CuFeO2. Suitable polymer blend and maximum percent volume of metal powder are studied. When percent volume of metal powder is increased, melt flow rate of polymer blend is also increased. The most suitable printing condition is reported and the properties of CuFeO2 are observed by Scanning Electron Microscopy, and Dynamic Scanning Calorimeter, X-ray diffraction. As a new method to produce semiconductor, this technique has a potential to allow any scientist or students to design and print a catalyst or sensing material by the most conventional 3D printing machine which is commonly used around the world.

  12. Tuning the morphology of metastable MnS films by simple chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Dhandayuthapani, T. [Directorate of Distance Education, Alagappa University, Karaikudi 630004 (India); Girish, M. [Department of Physics, Alagappa University, Karaikudi 630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi 630004 (India); Sanjeeviraja, C. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi 630004 (India); Gopalakrishnan, R. [Department of Physics, Anna University, Chennai 600025 (India)

    2015-10-30

    Graphical abstract: - Highlights: • MnS films with diverse morphological features were prepared without any complexing agent. • The change in morphology of MnS films may be due to the “oriented aggregation”. • The dual role (as sulfur source and structure directing agent) of thiourea was observed. • Sulfur source concentration induced enhancement in the crystallization of films. - Abstract: In the present investigation, we have prepared the spherical particles, almond-like, and cauliflower-like morphological structures of metastable MnS films on glass substrate by chemical bath deposition technique at low temperature without using any complexing or chelating agent. The morphological change of MnS films with molar ratio may be due to the oriented aggregation of adjacent particles. The compositional purity of deposited film was confirmed by the EDAX study. X-ray diffraction and micro-Raman studies confirm the sulfur source concentration induced enhancement in the crystallization of films with metastable MnS phase (zinc-blende β-MnS, and wurtzite γ-MnS). The shift in PL emission peak with molar ratio may be due to the change in optical energy band gap of the MnS, which was further confirmed by the optical absorbance study. The paramagnetic behavior of the sample was confirmed by the M–H plot.

  13. Development of CVD Diamond for Industrial Applications Final Report CRADA No. TC-2047-02

    Energy Technology Data Exchange (ETDEWEB)

    Caplan, M. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Olstad, R. [General Atomics, San Diego, CA (United States); Jory, H. [Communications and Power Industries, Palo Alto, CA (United States); Vikharov, A. L. [Russian Academy of Sciences (RAS), Moscow (Russian Federation)

    2017-09-08

    This project was a collaborative effort to develop and demonstrate a new millimeter microwave assisted chemical vapor deposition(CVD) process for manufacturing large diamond disks with greatly reduced processing times and costs from those now available. In the CVD process, carbon based gases (methane) and hydrogen are dissociated into plasma using microwave discharge and then deposited layer by layer as polycrystalline diamond onto a substrate. The available low frequency (2.45GHz) microwave sources used elsewhere (De Beers) result in low density plasmas and low deposition rates: 4 inch diamond disks take 6-8 weeks to process. The new system developed in this project uses a high frequency 30GHz Gyrotron as the microwave source and a quasi-optical CVD chamber resulting in a much higher density plasma which greatly reduced the diamond processing times (1-2 weeks)

  14. Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Sadananda Kumar, N., E-mail: sadanthara@gmail.com; Bangera, Kasturi V.; Shivakumar, G. K. [National Institute of Technology Karnataka, Surathkal, Thin Films Laboratory, Department of Physics (India)

    2015-07-15

    Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm{sup 2} V{sup –1} s{sup –1}, and a hole concentration of 6.25 × 10{sup 17} cm{sup –3}.

  15. Geophysical techniques for reconnaissance investigations of soils and surficial deposits in mountainous terrain

    Science.gov (United States)

    Olson, C.G.; Doolittle, J.A.

    1985-01-01

    Two techniques were assessed for their capabilities in reconnaissance studies of soil characteristics: depth to the water table and depth to bedrock beneath surficial deposits in mountainous terrain. Ground-penetrating radar had the best near-surface resolution in the upper 2 m of the profile and provided continuous interpretable imagery of soil profiles and bedrock surfaces. Where thick colluvium blankets side slopes, the GPR could not consistently define the bedrock interface. In areas with clayey or shaley sediments, the GPR is also more limited in defining depth and is less reliable. Seismic refraction proved useful in determining the elevation of the water table and depth to bedrock, regardless of thickness of overlying material, but could not distinguish soil-profile characteristics.-from Authors

  16. Zn Thin Film Deposition for Fe Layer Shielding Use the Sputtering Technique on Cylindrical Form

    International Nuclear Information System (INIS)

    Yunanto; Tjipto Sujitno, BA; Suprapto; Simbolon, Sahat

    2002-01-01

    Deposition of thin film on Fe substrate use sputtering technique on cylindrical form was carried out. The purpose of this research is to protect Fe due to the corrosion with Zn thin film. Sputtering method was proposed to protect a component of complex form. Substrate has functioned as anode, meanwhile target in cylindrical form as a cathode. Argon ion from anode bombard Zn with enough energy for releasing Zn. Zn atom would scatter and some of then was focused on the anode. For testing Zn atom on Fe by using XRF and corrosion rate with potentiostat. It was found that corrosion rate was decreased from 0.051 mpy to 0.031 mpy on 0.63 % of Fe substrate. (author)

  17. Amorphous indium gallium zinc oxide thin film grown by pulse laser deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mistry, Bhaumik V., E-mail: bhaumik-phy@yahoo.co.in; Joshi, U. S. [Department of Physics, University School of Sciences, Gujarat University, Ahmedabad-380 009 (India)

    2016-05-23

    Highly electrically conducting and transparent in visible light IGZO thin film were grown on glass substrate at substrate temperature of 400 C by a pulse laser deposition techniques. Structural, surface, electrical, and optical properties of IGZO thin films were investigated at room temperature. Smooth surface morphology and amorphous nature of the film has been confirmed from the AFM and GIXRD analysis. A resistivity down to 7.7×10{sup −3} V cm was reproducibly obtained while maintaining optical transmission exceeding 70% at wavelengths from 340 to 780 nm. The carrier densities of the film was obtain to the value 1.9×10{sup 18} cm{sup 3}, while the Hall mobility of the IGZO thin film was 16 cm{sup 2} V{sup −1}S{sup −1}.

  18. Diameter Tuning of β-Ga2O3 Nanowires Using Chemical Vapor Deposition Technique.

    Science.gov (United States)

    Kumar, Mukesh; Kumar, Vikram; Singh, R

    2017-12-01

    Diameter tuning of [Formula: see text]-Ga 2 O 3 nanowires using chemical vapor deposition technique have been investigated under various experimental conditions. Diameter of root grown [Formula: see text]-Ga 2 O 3 nanowires having monoclinic crystal structure is tuned by varying separation distance between metal source and substrate. Effect of gas flow rate and mixer ratio on the morphology and diameter of nanowires has been studied. Nanowire diameter depends on growth temperature, and it is independent of catalyst nanoparticle size at higher growth temperature (850-900 °C) as compared to lower growth temperature (800 °C). These nanowires show changes in structural strain value with change in diameter. Band-gap of nanowires increases with decrease in the diameter.

  19. Experimental investigation of ash deposits characteristics of co-combustion of coal and rice hull using a digital image technique

    International Nuclear Information System (INIS)

    Qiu, Kunzan; Zhang, Hailong; Zhou, Hao; Zhou, Bin; Li, Letian; Cen, Kefa

    2014-01-01

    This paper investigated the ash deposit characteristics during the co-firing Da Tong (DA) coal with different proportions of rice hull (0%, 5%, 10%, and 20%, based on weight) in a pilot-scale furnace. The growth of ash deposit with a four-stage mode was presented. The stable thickness values of DA coal, 5% rice hull, 10% rice hull, and 20% rice hull were 0.5, 1.4, 2.9, 5.7 cm, with stable heat flux values of 230, 200, 175, and 125 kW/m 2 , respectively. According to the results of scanning electron microscopy with energy dispersive X-ray analysis (SEM-EDX), the amount of Si in the deposits increased with the increasing proportion of rice hull rich in SiO 2 . The X-ray diffraction (XRD) analysis results indicated that most elements except Si were in the amorphous state because of the formation of eutectics. The stable thicknesses of deposits increased exponentially with the proportion of rice hull. The deposit was loose, easy removable but it reduced the heat transfer significantly. Consequently, sootblowing timely was necessary when co-firing DA coal with rice hull. - Highlights: • Digital image technique was used to monitor deposits growth process. • A type of four stages mode of ash deposit growth was presented. • The heat flux of ash deposits fit a three-stage mode. • The addition of rice hull increased the porosity of deposits

  20. Deposition of tantalum carbide coatings on graphite by laser interactions

    Science.gov (United States)

    Veligdan, James; Branch, D.; Vanier, P. E.; Barietta, R. E.

    1994-01-01

    Graphite surfaces can be hardened and protected from erosion by hydrogen at high temperatures by refractory metal carbide coatings, which are usually prepared by chemical vapor deposition (CVD) or chemical vapor reaction (CVR) methods. These techniques rely on heating the substrate to a temperature where a volatile metal halide decomposes and reacts with either a hydrocarbon gas or with carbon from the substrate. For CVR techniques, deposition temperatures must be in excess of 2000 C in order to achieve favorable deposition kinetics. In an effort to lower the bulk substrate deposition temperature, the use of laser interactions with both the substrate and the metal halide deposition gas has been employed. Initial testing involved the use of a CO2 laser to heat the surface of a graphite substrate and a KrF excimer laser to accomplish a photodecomposition of TaCl5 gas near the substrate. The results of preliminary experiments using these techniques are described.

  1. A comparison of biological effect and spray liquid distribution and deposition for different spray application techniques in different crops

    OpenAIRE

    Larsolle, Anders; Wretblad, Per; Westberg, Carl

    2002-01-01

    The objective of this study was to compare a selection of spray application techniques with different application volumes, with respect to the spray liquid distribution on flat surfaces, the deposition in fully developed crops and the biological effect. The spray application techniques in this study were conventional spray technique with three different nozzles: Teelet XR, Lechler ID and Lurmark DriftBeta, and also AirTec, Danfoil, Hardi Twin, Kyndestoit and Släpduk. The dynamic spray liquid ...

  2. High-efficiency supercapacitor electrodes of CVD-grown graphenes hybridized with multiwalled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Kalam, Amir Abul; Bae, Joon Ho [Dept. of Nano-physics, Gachon University, Seongnam (Korea, Republic of); Park, Soo Bin; Seo, Yong Ho [Nanotechnology and Advanced Material Engineering, HMC, and GRI, Sejong University, Seoul (Korea, Republic of)

    2015-08-15

    We demonstrate, for the first time, high-efficiency supercapacitors by utilizing chemical vapor deposition (CVD)-grown graphenes hybridized with multiwalled carbon nanotubes (CNTs). A single-layer graphene was grown by simple CVD growth method, and transferred to polyethylene terephthalate substrates. The bare graphenes were further hybridized with multiwalled CNTs by drop-coating CNTs on graphenes. The supercapacitors using bare graphenes and graphenes with CNTs revealed that graphenes with CNTs resulted in enhanced supercapacitor performances of 2.2- (the mass-specific capacitance) and 4.4-fold (the area-specific capacitance) of those of bare graphenes. Our strategy to improve electrochemical performance of CVD-grown graphenes is advantageous for large-scale graphene electrodes due to high electrical conductivity of CVD-grown graphenes and cost-effectiveness of using multiwalled CNTs as compared to conventional employment of single-walled CNTs.

  3. High-efficiency supercapacitor electrodes of CVD-grown graphenes hybridized with multiwalled carbon nanotubes

    International Nuclear Information System (INIS)

    Kalam, Amir Abul; Bae, Joon Ho; Park, Soo Bin; Seo, Yong Ho

    2015-01-01

    We demonstrate, for the first time, high-efficiency supercapacitors by utilizing chemical vapor deposition (CVD)-grown graphenes hybridized with multiwalled carbon nanotubes (CNTs). A single-layer graphene was grown by simple CVD growth method, and transferred to polyethylene terephthalate substrates. The bare graphenes were further hybridized with multiwalled CNTs by drop-coating CNTs on graphenes. The supercapacitors using bare graphenes and graphenes with CNTs revealed that graphenes with CNTs resulted in enhanced supercapacitor performances of 2.2- (the mass-specific capacitance) and 4.4-fold (the area-specific capacitance) of those of bare graphenes. Our strategy to improve electrochemical performance of CVD-grown graphenes is advantageous for large-scale graphene electrodes due to high electrical conductivity of CVD-grown graphenes and cost-effectiveness of using multiwalled CNTs as compared to conventional employment of single-walled CNTs

  4. Lithium storage properties of multiwall carbon nanotubes prepared by CVD

    International Nuclear Information System (INIS)

    Ahn, J.-O.; Andong National University,; Wang, G.X.; Liu, H.K.; Dou, S.X.

    2003-01-01

    Full text: Multiwall carbon nanotubes (MWCNTs) were synthesised by chemical vapour deposition (CVD) method using acetylene gas. The XRD pattern of as prepared carbon nanotubes showed that the d 002 value is 3.44 Angstroms. The morphology and microstructure of carbon nanotubes were characterized by HRTEM. Most of carbon nanotubes are entangled together to form bundles or ropes. The diameter of the carbon nanotubes is in the range of 10 ∼ 20 nm. There is a small amount of amorphous carbon particles presented in the sample. However, the yield of carbon nanotubes is more than 95%. Electrochemical properties of carbon nanotubes were characterised via a variety of electrochemical testing techniques. The result of CV test showed that the Li insertion potential is quite low, which is very close to O V versus Li + /Li reference electrode, whereas the potential for Li de-intercalation is in the range of 0.2-0.4 V. There exists a slight voltage hysteresis between Li intercalation and Li de-intercalation, which is similar to the other carbonaceous materials. The intensity of redox peaks of carbon nanotubes decrease with scanning cycle, indicating that the reversible Li insertion capacity gradually decreases. The carbon nanotubes electrode demonstrated a reversible lithium storage capacity of 340 mAh/g with good cyclability at moderate current density. Further improvement of Li storage capacity is possible by opening the end of carbon nanotubes to allow lithium insertion into inner graphene sheet of carbon nanotubes. The kinetic properties of lithium insertion in carbon nanotube electrodes were characterised by a.c. impedance measurements. It was found that the lithium diffusion coefficient d Li decreases with an increase of Li ion concentration in carbon nanotube host

  5. Techniques for the research on mass deposition effects in the bio-materials induced by heavy ion implantation

    International Nuclear Information System (INIS)

    Yuan Shibin; Wei Zengquan; Li Qiang

    2002-01-01

    Researchers have used heavy ion beams to implant small biomolecules, followed by advanced instrumental analysis to make preliminary studies on mass deposition induced by ion implantation. But research reports on the biological effects, i.e. mass deposition effects induced by mass deposition in living tissues, cells and macro-biomolecules have not been delivered hitherto. In the near future radioactive heavy ion beams will be possible to implant living cells and biomolecules, and auto-radiography, radioactive measurements and molecular biological techniques will be employed to further studies on the effects

  6. Analyzing the LiF thin films deposited at different substrate temperatures using multifractal technique

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, R.P. [Department of Physics, University of Allahabad, Allahabad, UP 211002 (India); Dwivedi, S., E-mail: suneetdwivedi@gmail.com [K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Mittal, A.K. [Department of Physics, University of Allahabad, Allahabad, UP 211002 (India); K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Kumar, Manvendra [Nanotechnology Application Centre, University of Allahabad, Allahabad, UP 211002 (India); Pandey, A.C. [K Banerjee Centre of Atmospheric and Ocean Studies, University of Allahabad, Allahabad, UP 211002 (India); Nanotechnology Application Centre, University of Allahabad, Allahabad, UP 211002 (India)

    2014-07-01

    The Atomic Force Microscopy technique is used to characterize the surface morphology of LiF thin films deposited at substrate temperatures 77 K, 300 K and 500 K, respectively. It is found that the surface roughness of thin film increases with substrate temperature. The multifractal nature of the LiF thin film at each substrate temperature is investigated using the backward two-dimensional multifractal detrended moving average analysis. The strength of multifractility and the non-uniformity of the height probabilities of the thin films increase as the substrate temperature increases. Both the width of the multifractal spectrum and the difference of fractal dimensions of the thin films increase sharply as the temperature reaches 500 K, indicating that the multifractility of the thin films becomes more pronounced at the higher substrate temperatures with greater cluster size. - Highlights: • Analyzing LiF thin films using multifractal detrended moving average technique • Surface roughness of LiF thin film increases with substrate temperature. • LiF thin films at each substrate temperature exhibit multifractality. • Multifractility becomes more pronounced at the higher substrate temperatures.

  7. Heavy Metals and Trace Elements Atmospheric Deposition Studies in Tula Region Using Moss Biomonitors Technique

    CERN Document Server

    Ermakova, E V; Steinnes, E

    2002-01-01

    For the first time the moss biomonitors technique was used in air pollution studies in Tula Region (Central Russia), applying NAA, AAS. Moss samples were collected at 83 sites in accordance with the sampling strategy adopted in European projects on biomonitoring atmospheric deposition. A wide set of trace elements in mosses was determined. The method of epithermal neutron activation at IBR-2 reactor of FLNP JINR has made it possible to identify 33 elements (Na, Mg, Al, Cl, K, Ca, Sc, V, Cr, Mn, Fe, Co, Ni, Zn, As, Br, Rb, Sr, Mo, Sb, I, Cs, Ba, La, Ce, Sm, Tb, Yb, Hf, Ta, W, Th, U) in the large-scale concentration range - from 10000 ppm for K to 0,001 ppm for Tb and Ta. Cu, Cd and Pb were determined by the flame AAS in the Norwegian Institute of Science and Technology. Using the graphical technique and principal component analysis allowed to separate plant, crustal and general pollution components in the moss. The obtained data will be used for constructing coloured maps of the distribution of elements over t...

  8. Plasma processing techniques for deposition of carbonic thin protective coatings on structural nuclear materials

    International Nuclear Information System (INIS)

    Andrei, V.; Oncioiu, G.; Coaca, E.; Rusu, O.; Lungu, C.

    2009-01-01

    Full text of publication follows: The production of nano-structured surface films with controlled properties is crucial for the development of materials necessary for the Advanced Systems for Nuclear Energy. Since the surface of materials is the zone through which materials interact with the environment, the surface science and surface engineering techniques plays an essential role in the understanding and control of the processes involved. Complex surface structures were developed on stainless steels used as structural nuclear materials: austenitic stainless steels based on Fe, austenitic steels with high content of Cr, ferrites resistant to corrosion, by various Plasma Processing methods which include: - Plasma Electrolytic (PE) treatments: the steel substrates were modified by nitriding and nitro-carburizing plasma diffusion treatments; - carbonic films deposition in Thermionic Vacuum Arc Plasma. The results of the characterization of surface structures obtained in various experimental conditions for improvement of the properties (corrosion resistance, hardness, wear properties) are reported: the processes and structures were characterized by correlation of the results of the complementary techniques: XPS, 'depth profiling', SEM, XRD, EIS. An overall description of the processes involved in the surface properties improvement, and some consideration about the new materials development for energy technologies are presented

  9. A review of hydroxyapatite-based coating techniques: Sol-gel and electrochemical depositions on biocompatible metals.

    Science.gov (United States)

    Asri, R I M; Harun, W S W; Hassan, M A; Ghani, S A C; Buyong, Z

    2016-04-01

    New promising techniques for depositing biocompatible hydroxyapatite-based coatings on biocompatible metal substrates for biomedical applications have continuously been exploited for more than two decades. Currently, various experimental deposition processes have been employed. In this review, the two most frequently used deposition processes will be discussed: a sol-gel dip coating and an electrochemical deposition. This study deliberates the surface morphologies and chemical composition, mechanical performance and biological responses of sol-gel dip coating as well as the electrochemical deposition for two different sample conditions, with and without coating. The review shows that sol-gel dip coatings and electrochemical deposition were able to obtain the uniform and homogeneous coating thickness and high adherent biocompatible coatings even in complex shapes. It has been accepted that both coating techniques improve bone strength and initial osseointegration rate. The main advantages and limitations of those techniques of hydroxyapatite-based coatings are presented. Furthermore, the most significant challenges and critical issues are also highlighted. Copyright © 2015 Elsevier Ltd. All rights reserved.

  10. Optimal properties for coated titanium implants with the hydroxyapatite layer formed by the pulsed laser deposition technique

    Science.gov (United States)

    Himmlova, Lucia; Dostalova, Tatjana; Jelinek, Miroslav; Bartova, Jirina; Pesakova, V.; Adam, M.

    1999-02-01

    Pulsed laser deposition technique allow to 'tailor' bioceramic coat for metal implants by the change of deposition conditions. Each attribute is influenced by the several deposition parameters and each parameter change several various properties. Problem caused that many parameters has an opposite function and improvement of one property is followed by deterioration of other attribute. This study monitor influence of each single deposition parameter and evaluate its importance form the point of view of coat properties. For deposition KrF excimer laser in stainless-steel deposition chamber was used. Deposition conditions (ambient composition and pressures, metallic substrate temperature, energy density and target-substrate distance) were changed according to the film properties. A non-coated titanium implant was used as a control. Films with promising mechanical quality underwent an in vitro biological tests -- measurement of proliferation activity, observing cell interactions with macrophages, fibroblasts, testing toxicity of percolates, observing a solubility of hydroxyapatite (HA) coat. Deposition conditions corresponding with the optimal mechanical and biochemical properties are: metal temperature 490 degrees Celsius, ambient-mixture of argon and water vapor, energy density 3 Jcm-2, target-substrate distance 7.5 cm.

  11. Thermoluminescent properties of CVD diamond: applications to ionising radiation dosimetry

    International Nuclear Information System (INIS)

    Petitfils, A.

    2007-09-01

    Remarkable properties of synthetic diamond (human soft tissue equivalence, chemical stability, non-toxicity) make this material suitable for medical application as thermoluminescent dosimeter (TLD). This work highlights the interest of this material as radiotherapy TLD. In the first stage of this work, we looked after thermoluminescent (TL) and dosimetric properties of polycrystalline diamond made by Chemically Vapor Deposited (CVD) synthesis. Dosimetric characteristics are satisfactory as TLD for medical application. Luminescence thermal quenching on diamond has been investigated. This phenomenon leads to a decrease of dosimetric TL peak sensitivity when the heating rate increases. The second part of this work analyses the use of synthetic diamond as TLD in radiotherapy. Dose profiles, depth dose distributions and the cartography of an electron beam obtained with our samples are in very good agreement with results from an ionisation chamber. It is clearly shown that CVD) diamond is of interest to check beams of treatment accelerators. The use of these samples in a control of treatment with Intensity Modulated Radiation Therapy underlines good response of synthetic diamond in high dose gradient areas. These results indicate that CVD diamond is a promising material for radiotherapy dosimetry. (author)

  12. Mass production of CNTs using CVD multi-quartz tubes

    Energy Technology Data Exchange (ETDEWEB)

    Yousef, Samy; Mohamed, Alaa [Dept. of Production Engineering and Printing Technology, Akhbar Elyom Academy, Giza (Egypt)

    2016-11-15

    Carbon nanotubes (CNTs) have become the backbone of modern industries, including lightweight and heavy-duty industrial applications. Chemical vapor deposition (CVD) is considered as the most common method used to synthesize high yield CNTs. This work aims to develop the traditional CVD for the mass production of more economical CNTs, meeting the growing CNT demands among consumers by increasing the number of three particular reactors. All reactors housing is connected by small channels to provide the heat exchange possibility between the chambers, thereby decreasing synthesis time and reducing heat losses inside the ceramic body of the furnace. The novel design is simple and cheap with a lower reacting time and heat loss compared with the traditional CVD design. Methane, hydrogen, argon, and catalyzed iron nanoparticles were used as a carbon source and catalyst during the synthesis process. In addition, CNTs were produced using only a single quartz tube for comparison. The produced samples were examined using XRD, TEM, SEM, FTIR, and TGA. The results showed that the yield of CNTs increases by 287 % compared with those synthesized with a single quartz tube. Moreover, the total synthesis time of CNTs decreases by 37 % because of decreased heat leakage.

  13. Laboratory model study of newly deposited dredger fills using improved multiple-vacuum preloading technique

    Directory of Open Access Journals (Sweden)

    Jingjin Liu

    2017-10-01

    Full Text Available Problems continue to be encountered concerning the traditional vacuum preloading method in field during the treatment of newly deposited dredger fills. In this paper, an improved multiple-vacuum preloading method was developed to consolidate newly dredger fills that are hydraulically placed in seawater for land reclamation in Lingang Industrial Zone of Tianjin City, China. With this multiple-vacuum preloading method, the newly deposited dredger fills could be treated effectively by adopting a novel moisture separator and a rapid improvement technique without sand cushion. A series of model tests was conducted in the laboratory for comparing the results from the multiple-vacuum preloading method and the traditional one. Ten piezometers and settlement plates were installed to measure the variations in excess pore water pressures and moisture content, and vane shear strength was measured at different positions. The testing results indicate that water discharge–time curves obtained by the traditional vacuum preloading method can be divided into three phases: rapid growth phase, slow growth phase, and steady phase. According to the process of fluid flow concentrated along tiny ripples and building of larger channels inside soils during the whole vacuum loading process, the fluctuations of pore water pressure during each loading step are divided into three phases: steady phase, rapid dissipation phase, and slow dissipation phase. An optimal loading pattern which could have a best treatment effect was proposed for calculating the water discharge and pore water pressure of soil using the improved multiple-vacuum preloading method. For the newly deposited dredger fills at Lingang Industrial Zone of Tianjin City, the best loading step was 20 kPa and the loading of 40–50 kPa produced the highest drainage consolidation. The measured moisture content and vane shear strength were discussed in terms of the effect of reinforcement, both of which indicate

  14. Stress analysis of CVD diamond window for ECH system

    International Nuclear Information System (INIS)

    Takahashi, Koji

    2001-03-01

    The stress analysis of a chemical vapor deposition (CVD) diamond window for Electron Cyclotron Heating and Current Drive (ECH/ECCD) system of fusion reactors is described. It was found that the real size diamond window (φ aper =70mm, t=2.25mm) withstood 14.5 atm. (1.45 MPa). The calculation results of the diamond window by ABAQUS code agree well with the results of the pressure test. The design parameters of the torus diamond window for a vacuum and a safety barrier were also obtained. (author)

  15. CVD diamond sensor for UV-photon detection

    CERN Document Server

    Periale, L; Gervino, G; Lamarina, A M; Palmisano, C; Periale, R; Picchi, P

    2012-01-01

    A new generation of UV photosensors, based on single crystal Chemical Vapour Deposition (CVD) diamonds to work optically coupled with large volume two-phase liquid-Ar (LAr) or liquid-Xe (LXe) detectors nowadays under design for the next generation of WIMPs experiments, is under development. Preliminary tests and first calibrations show these devices can have better performance than the existing UV sensitive detectors (higher photosensitivity and better signal-to-noise ratio). I-V characteristics, dark current measurements, linearity response to X-ray irradiation, and alpha-particle energy resolution are reported and discussed. (C) 2011 Elsevier B.V. All rights reserved.

  16. Urchin-like artificial gallium oxide nanowires grown by a novel MOCVD/CVD-based route for random laser application

    Energy Technology Data Exchange (ETDEWEB)

    Melo, Ronaldo P. de [Programa de Pós-Graduação em Ciências de Materiais, Universidade Federal de Pernambuco, Recife (Brazil); Colégio Militar do Recife, Exército Brasileiro, Recife PE 50730-120 (Brazil); Oliveira, Nathalia Talita C. [Programa de Pós-Graduação em Ciências de Materiais, Universidade Federal de Pernambuco, Recife (Brazil); Dominguez, Christian Tolentino; Gomes, Anderson S. L.; Araújo, Cid B. de [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife (Brazil); Falcão, Eduardo H. L.; Alves, Severino; Luz, Leonis L. da [Departamento de Química Fundamental, Universidade Federal de Pernambuco, 50670-901 Recife (Brazil); Chassagnon, Remi [Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS-Université de Bourgogne, 9 Av. A. Savary, BP 47870, 21078 Dijon Cedex (France); Sacilotti, Marco [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife (Brazil); Nanoform Group, Laboratoire Interdisciplinaire Carnot de Bourgogne, Université de Bourgogne, Dijon (France)

    2016-04-28

    A novel procedure based on a two-step method was developed to obtain β-Ga{sub 2}O{sub 3} nanowires by the chemical vapor deposition (CVD) method. The first step consists in the gallium micro-spheres growth inside a metal-organic chemical vapor deposition environment, using an organometallic precursor. Nanoscale spheres covering the microspheres were obtained. The second step involves the CVD oxidization of the gallium micro-spheres, which allow the formation of β-Ga{sub 2}O{sub 3} nanowires on the micro-sphere surface, with the final result being a nanostructure mimicking nature's sea urchin morphology. The grown nanomaterial is characterized by several techniques, including X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray, transmission electron microscopy, and photoluminescence. A discussion about the growth mechanism and the optical properties of the β-Ga{sub 2}O{sub 3} material is presented considering its unknown true bandgap value (extending from 4.4 to 5.68 eV). As an application, the scattering properties of the nanomaterial are exploited to demonstrate random laser emission (around 570 nm) when it is permeated with a laser dye liquid solution.

  17. A Effect discussion of transient electromagnetic sounding technique in paleochannel-type sandstone-hosted uranium deposit

    International Nuclear Information System (INIS)

    Yang Jianchun; Fang Genxian; Yang Yaxin

    2003-01-01

    On the base of the application of transient electromagnetic technique of paleochannel-type sandstone-hosted uranium deposits in Tengchong region of Yunan Province, this paper analyses the detect example. It discusses the theory foundation of TEM, fieldwork means, data processing and interpret. By contrast with routine electricity farad, the transient electromagnetic technique have the special merit and favorable space resolve gender under conditions of intricacy terrain. This means can get good effect in detecting paleochannel-type sandstone-hosted uranium deposits space position. It is a good reference for other prospecting and exploration work

  18. Characterization of CuS nanocrystalline thin films synthesized by chemical bath deposition and dip coating techniques

    International Nuclear Information System (INIS)

    Chaki, Sunil H.; Deshpande, M.P.; Tailor, Jiten P.

    2014-01-01

    CuS thin films were synthesized by chemical bath deposition and dip coating techniques at ambient temperature. The energy dispersive analysis of X-rays of the thin films confirmed that both the as synthesized thin films are stoichiometric. The X-ray diffraction of the chemical bath deposited and dip coating deposited thin films showed that the films possess hexagonal structure having lattice parameters, a = b = 3.79 A and c = 16.34 A. The crystallite sizes determined from the X-ray diffraction data using Scherrer's formula for the chemical bath deposition and dip coating deposition thin films came out to be nearly 11 nm and 13 nm, respectively. The optical microscopy of the as deposited thin films surfaces showed that the substrates are well covered in both the deposited films. The scanning electron microscopy of the thin films clearly showed that in chemical bath deposited thin films the grain size varies from few μm to nm, while in dip coating deposited films the grain size ranges in nm. The optical bandgap determined from the optical absorbance spectrum analysis showed, chemical bath deposited thin films possess direct bandgap of 2.2 eV and indirect bandgap of 1.8 eV. In the case of dip coating deposited thin films, the direct bandgap is 2.5 eV and indirect bandgap is 1.9 eV. The d.c. electrical resistivity variation with temperature for both the deposited films showed that the resistivity decreases with temperature thus confirming the semiconducting nature. The thermoelectric power variations with temperature and the room temperature Hall Effect study of both the synthesized CuS thin films showed them to be of p-type conductivity. The obtained results are discussed in details. - Highlights: • CuS thin films were synthesized by chemical bath deposition and dip coating techniques. • The films possessed hexagonal structure. • The optical absorption showed that the films had direct and indirect bandgap. • Study of electrical transport properties

  19. The effect of alkaline doped catalysts on the CVD synthesis of carbon nanotubes

    DEFF Research Database (Denmark)

    Nemeth, Krisztian; Nemeth, Zoltan; Fejes, Dora

    2011-01-01

    The aim of this work was to develop new doped catalysts for chemical vapour deposition (CVD) synthesis in order to increase the quantity and quality of carbon nanotubes (CNTs). Doping compounds such as CsBr, CsCl, KBr and KCl were used to reach higher carbon deposit and carbon yield. The amount o...... of the dopant alkali compounds varied from 1 to 5%. As prepared CNTs were characterized by transmission electron microscopy (TEM), X‐ray diffraction (XRD) and Raman microscopy. Results revealed that both carbon yield and deposit could be increased over doped catalysts.......The aim of this work was to develop new doped catalysts for chemical vapour deposition (CVD) synthesis in order to increase the quantity and quality of carbon nanotubes (CNTs). Doping compounds such as CsBr, CsCl, KBr and KCl were used to reach higher carbon deposit and carbon yield. The amount...

  20. Investigation of defects in ultra-thin Al{sub 2}O{sub 3} films deposited on pure copper by the atomic layer deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Chang, M.L.; Wang, L.C. [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, H.C., E-mail: hclinntu@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Chen, M.J., E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, K.M. [Department of Materials Science and Engineering, Feng Chia University, No. 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan (China)

    2015-12-30

    Graphical abstract: Some residual OH ligands originating from incomplete reaction between TMA and surface species of OH* during ALD process induce the defects in deposited Al{sub 2}O{sub 3} films. Three possible types of defects are suggested. The analytic results indicate the defects are Type-I and/or Type-II but do not directly expose the substrate, like pinholes (Type-III). - Highlights: • Oxidation trials were conducted to investigate the defects in ultra-thin Al{sub 2}O{sub 3} films deposited ALD technique on pure copper. • The residual OH ligands in the deposited Al{sub 2}O{sub 3} films induce looser micro-structure which has worse oxidation resistance. • Superficial contamination particles on substrate surface are confirmed to be one of nucleation sites of the defects. - Abstract: Al{sub 2}O{sub 3} films with various thicknesses were deposited by the atomic layer deposition (ALD) technique on pure copper at temperatures of 100–200 °C. Oxidation trials were conducted in air at 200 °C to investigate the defects in these films. The analytic results show that the defects have a looser micro-structure compared to their surroundings, but do not directly expose the substrate, like pinholes. The film's crystallinity, mechanical properties and oxidation resistance could also be affected by these defects. Superficial contamination particles on the substrate surface are confirmed to be nucleation sites of the defects. A model for the mechanism of defect formation is proposed in this study.

  1. CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

    2014-09-15

    In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

    International Nuclear Information System (INIS)

    Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina; Levy-Clement, Claude

    2014-01-01

    In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl 2 to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl 2 treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)

    International Nuclear Information System (INIS)

    Sadekar, H.K.; Deshpande, N.G.; Gudage, Y.G.; Ghosh, A.; Chavhan, S.D.; Gosavi, S.R.; Sharma, Ramphal

    2008-01-01

    ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has ∼120 ± 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient (∼75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV

  4. Growth, structural, optical and electrical study of ZnS thin films deposited by solution growth technique (SGT)

    Energy Technology Data Exchange (ETDEWEB)

    Sadekar, H K [Arts, Commerce and Science college, Sonai 414105 (M.S.) (India); Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India); Deshpande, N G; Gudage, Y G; Ghosh, A; Chavhan, S D; Gosavi, S R [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India); Sharma, Ramphal [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. B.A.M. University, Aurangabad 431004 (M.S.) (India)

    2008-04-03

    ZnS thin films have been deposited onto glass substrates at temperature 90 deg. C by solution growth technique (SGT). The deposition parameters were optimized. Triethanolamine (TEA) was used as a complexing agent for uniform deposition of the thin films. The elemental composition of the film was confirmed by energy dispersive analysis by X-ray (EDAX) technique. Structure and surface morphology of as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), atomic force microscopy (AFM), respectively. XRD patterns reveal that as-deposited thin films were amorphous in nature; while the obtained precipitate powder was polycrystalline in nature. SEM results revealed that deposited ZnS material has {approx}120 {+-} 20 nm average grain size and the spherical grains are distributed over the entire glass substrate. Low surface roughness was found to be 2.7 nm from AFM studies. Transmission spectra indicate a high transmission coefficient ({approx}75%) with direct band gap energy equal to 3.72 eV while indirect band gap was found to be 3.45 eV. A photoluminescence (PL) study of the ZnS at room temperature (300 K) indicates a strong luminescence band at energy 2.02 eV.

  5. Low-temperature deposition of ZnO thin films on PET and glass substrates by DC-sputtering technique

    International Nuclear Information System (INIS)

    Banerjee, A.N.; Ghosh, C.K.; Chattopadhyay, K.K.; Minoura, Hideki; Sarkar, Ajay K.; Akiba, Atsuya; Kamiya, Atsushi; Endo, Tamio

    2006-01-01

    The structural, optical and electrical properties of ZnO thin films (260 - 490 nm thick) deposited by direct-current sputtering technique, at a relatively low-substrate temperature (363 K), onto polyethylene terephthalate and glass substrates have been investigated. X-ray diffraction patterns confirm the proper phase formation of the material. Optical transmittance data show high transparency (80% to more than 98%) of the films in the visible portion of solar radiation. Slight variation in the transparency of the films is observed with a variation in the deposition time. Electrical characterizations show the room-temperature conductivity of the films deposited onto polyethylene terephthalate substrates for 4 and 5 h around 0.05 and 0.25 S cm -1 , respectively. On the other hand, for the films deposited on glass substrates, these values are 8.5 and 9.6 S cm -1 for similar variation in the deposition time. Room-temperature conductivity of the ZnO films deposited on glass substrates is at least two orders of magnitude higher than that of ZnO films deposited onto polyethylene terephthalate substrates under identical conditions. Hall-measurements show the maximum carrier concentration of the films on PET and glass substrate around 2.8 x 10 16 and 3.1 x 10 2 cm -3 , respectively. This report will provide newer applications of ZnO thin films in flexible display technology

  6. Magnetic properties of nickel nanowires decorated with cobalt nanoparticles fabricated by two step electrochemical deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Maaz, K., E-mail: maaz@impcas.ac.cn [Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Nanomaterials Research Group, Physics Division, PINSTECH, Nilore, 45650, Islamabad (Pakistan); Duan, J.L. [Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Karim, S. [Nanomaterials Research Group, Physics Division, PINSTECH, Nilore, 45650, Islamabad (Pakistan); Chen, Y.H.; Yao, H.J.; Mo, D.; Sun, Y.M. [Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China); Liu, J., E-mail: j.liu@impcas.ac.cn [Materials Research Center, Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou, 730000 (China)

    2016-10-01

    We demonstrate fabrication and magnetic characterization of novel nanostructures composed of Ni nanowires decorated with Co nanoparticles by two step etching and electrochemical deposition in polycarbonate template. Structural analysis confirmed the formation of nickel nanowires with diameter of 62 nm which are surrounded by cobalt nanoparticles of about 15 nm in diameter. By electron microscopy analyses it is evident that the nanoparticles are distributed on the surface of the nanowires. Analysis of magnetization data indicates that ferromagnetic Ni nanowires exhibit an easy axis of magnetization parallel to the wire long-axis while the angular dependence of coercivity indicates that magnetization reversal occurs through the curling process in these nanowires. An exchange bias accompanied by vertical shift in magnetization was observed below ∼20 K, measured under a cooling field of 1 kOe, which is attributed to the spin interactions between the spin-glass like surface layer and ferromagnetic core of the nanowires and nanoparticles. - Highlights: • Co-decorated Ni nanowires were fabricated by two-step electrodeposition technique. • The nanoparticles are distributed on the surface of nanowires. • Magnetization reversal occurs through the curling process in the nanowires. • Temperature dependent coercivity follows thermal activation model.

  7. Uniaxial Magnetization Performance of Textured Fe Nanowire Arrays Electrodeposited by a Pulsed Potential Deposition Technique

    Science.gov (United States)

    Neetzel, C.; Ohgai, T.; Yanai, T.; Nakano, M.; Fukunaga, H.

    2017-11-01

    Textured ferromagnetic Fe nanowire arrays were electrodeposited using a rectangular-pulsed potential deposition technique into anodized aluminum oxide nanochannels. During the electrodeposition of Fe nanowire arrays at a cathodic potential of - 1.2 V, the growth rate of the nanowires was ca. 200 nm s-1. The aspect ratio of Fe nanowires with a diameter of 30 ± 5 nm reached ca. 2000. The long axis of Fe nanowires corresponded with the direction when a large overpotential during the on-time pulse was applied, whereas it orientated to the direction under the potentiostatic condition with a small overpotential. By shifting the on-time cathode potential up to - 1.8 V, the texture coefficient for the (200) plane, TC200, reached up to 1.94. Perpendicular magnetization performance was observed in Fe nanowire arrays. With increasing TC200, the squareness of Fe nanowire arrays increased up to 0.95 with the coercivity maintained at 1.4 kOe at room temperature. This research result has opened a novel possibility of Fe nanowire arrays that can be applied for a new permanent magnetic material without rare-earth metals.

  8. Organo-layered double hydroxides composite thin films deposited by laser techniques

    Energy Technology Data Exchange (ETDEWEB)

    Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Matei, A.; Dumitru, M.; Stokker-Cheregi, F.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest 030018 (Romania); Raditoiu, V.; Corobea, M.C. [National R.& D. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021 Bucharest (Romania)

    2016-06-30

    Highlights: • PLD and MAPLE was successfully used to produce organo-layered double hydroxides. • The organic anions (dodecyl sulfate-DS) were intercalated in co-precipitation step. • Zn2.5Al-LDH (Zn/Al = 2.5) and Zn2.5Al-DS thin films obtained in this work could be suitable for further applications as hydrophobic surfaces. - Abstract: We used laser techniques to create hydrophobic thin films of layered double hydroxides (LDHs) and organo-modified LDHs. A LDH based on Zn-Al with Zn{sup 2+}/Al{sup 3+} ratio of 2.5 was used as host material, while dodecyl sulfate (DS), which is an organic surfactant, acted as guest material. Pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) were employed for the growth of the films. The organic anions were intercalated in co-precipitation step. The powders were subsequently used either as materials for MAPLE, or they were pressed and used as targets for PLD. The surface topography of the thin films was investigated by atomic force microscopy (AFM), the crystallographic structure of the powders and films was checked by X-ray diffraction. FTIR spectroscopy was used to evidence DS interlayer intercalation, both for powders and the derived films. Contact angle measurements were performed in order to establish the wettability properties of the as-prepared thin films, in view of functionalization applications as hydrophobic surfaces, owing to the effect of DS intercalation.

  9. Improved Understanding of Implosion Symmetry through New Experimental Techniques Connecting Hohlraum Dynamics with Laser Beam Deposition

    Science.gov (United States)

    Ralph, Joseph; Salmonson, Jay; Dewald, Eduard; Bachmann, Benjamin; Edwards, John; Graziani, Frank; Hurricane, Omar; Landen, Otto; Ma, Tammy; Masse, Laurent; MacLaren, Stephen; Meezan, Nathan; Moody, John; Parrilla, Nicholas; Pino, Jesse; Sacks, Ryan; Tipton, Robert

    2017-10-01

    Understanding what affects implosion symmetry has been a challenge for scientists designing indirect drive inertial confinement fusion experiments on the National Ignition Facility (NIF). New experimental techniques and data analysis have been employed aimed at improving our understanding of the relationship between hohlraum dynamics and implosion symmetry. Thin wall imaging data allows for time-resolved imaging of 10 keV Au l-band x-rays providing for the first time on the NIF, a spatially resolved measurement of laser deposition with time. In the work described here, we combine measurements from the thin wall imaging with time resolved views of the interior of the hohlraum. The measurements presented are compared to hydrodynamic simulations as well as simplified physics models. The goal of this work is to form a physical picture that better explains the relationship of the hohlraum dynamics and capsule ablator on laser beam propagation and implosion symmetry. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under contract DE-AC52-07NA27344.

  10. Al2O3 Coatings on Magnesium Alloy Deposited by the Fluidized Bed (FB Technique

    Directory of Open Access Journals (Sweden)

    Gabriele Baiocco

    2018-01-01

    Full Text Available Magnesium alloys are widely employed in several industrial domains for their outstanding properties. They have a high strength-weight ratio, with a density that is lower than aluminum (33% less, and feature good thermal properties, dimensional stability, and damping characteristics. However, they are vulnerable to oxidation and erosion-corrosion phenomena when applied in harsh service conditions. To avoid the degradation of magnesium, several coating methods have been presented in the literature; however, all of them deal with drawbacks that limit their application in an industrial environment, such as environmental pollution, toxicity of the coating materials, and high cost of the necessary machinery. In this work, a plating of Al2O3 film on a magnesium alloy realized by the fluidized bed (FB technique and using alumina powder is proposed. The film growth obtained through this cold deposition process is analyzed, investigating the morphology as well as tribological and mechanical features and corrosion behavior of the plated samples. The resulting Al2O3 coatings show consistent improvement of the tribological and anti-corrosive performance of the magnesium alloy.

  11. Al₂O₃ Coatings on Magnesium Alloy Deposited by the Fluidized Bed (FB) Technique.

    Science.gov (United States)

    Baiocco, Gabriele; Rubino, Gianluca; Tagliaferri, Vincenzo; Ucciardello, Nadia

    2018-01-09

    Magnesium alloys are widely employed in several industrial domains for their outstanding properties. They have a high strength-weight ratio, with a density that is lower than aluminum (33% less), and feature good thermal properties, dimensional stability, and damping characteristics. However, they are vulnerable to oxidation and erosion-corrosion phenomena when applied in harsh service conditions. To avoid the degradation of magnesium, several coating methods have been presented in the literature; however, all of them deal with drawbacks that limit their application in an industrial environment, such as environmental pollution, toxicity of the coating materials, and high cost of the necessary machinery. In this work, a plating of Al₂O₃ film on a magnesium alloy realized by the fluidized bed (FB) technique and using alumina powder is proposed. The film growth obtained through this cold deposition process is analyzed, investigating the morphology as well as tribological and mechanical features and corrosion behavior of the plated samples. The resulting Al₂O₃ coatings show consistent improvement of the tribological and anti-corrosive performance of the magnesium alloy.

  12. Characterizations of multilayer ZnO thin films deposited by sol-gel spin coating technique

    Directory of Open Access Journals (Sweden)

    M.I. Khan

    Full Text Available In this work, zinc oxide (ZnO multilayer thin films are deposited on glass substrate using sol-gel spin coating technique and the effect of these multilayer films on optical, electrical and structural properties are investigated. It is observed that these multilayer films have great impact on the properties of ZnO. X-ray Diffraction (XRD confirms that ZnO has hexagonal wurtzite structure. Scanning Electron Microscopy (SEM showed the crack-free films which have uniformly distributed grains structures. Both micro and nano particles of ZnO are present on thin films. Four point probe measured the electrical properties showed the decreasing trend between the average resistivity and the number of layers. The optical absorption spectra measured using UV–Vis. showed the average transmittance in the visible region of all films is 80% which is good for solar spectra. The performance of the multilayer as transparent conducting material is better than the single layer of ZnO. This work provides a low cost, environment friendly and well abandoned material for solar cells applications. Keywords: Multilayer films, Semiconductor, ZnO, XRD, SEM, Optoelectronic properties

  13. Deposition of corrosion products from dowels on human dental root surfaces measured with proton microprobe technique

    International Nuclear Information System (INIS)

    Brune, D.; Brunell, G.; Lindh, U.

    1982-01-01

    Distribution of copper, mercury and zinc on human teeth root surfaces adjacent to dowels of gold alloy or brass as well as dowels of brass in conjunction with an amalgam crown has been measured with a proton microprobe using PIXE techniques. Upper limits of the contents of gold and silver on the root surfaces were established. Pronounced concentration profiles of copper and zinc were observed on the root surfaces of teeth prepared with dowels of brass. The dowel of gold alloy revealed only zinc deposition. The major part of copper on the root surfaces is assumed to arise from corrosion of the dowels, and has been transported to the surface by diffusion through the dential tubuli. Zinc in the volume analysed is a constituent of dentin tissue as well as a corrosion product of the brass dowel. Part of the zinc level could also be ascribed to erosion of the zinc phosphate cement matrix. The volumes analysed were (25 x 25 x 25)μm 3 . The levels of copper, mercury and zinc on the tooth root surfaces attained values up to about 200, 20 and 600 ppm, respectively. (orig.)

  14. Deposition of corrosion products from dowels on human dental root surfaces measured with proton microprobe technique

    Science.gov (United States)

    Brune, D.; Brunell, G.; Lindh, U.

    1982-06-01

    Distribution of copper, mercury and zinc on human teeth root surfaces adjacent to dowels of gold alloy or brass as well as dowels of brass in conjunction with an amalgam crown has been measured with a proton microprobe using PIXE techniques. Upper limits of the contents of gold and silver on the root surfaces were established. Pronounced concentration profiles of copper and zinc were observed on the root surfaces of teeth prepared with dowels of brass. The dowel of gold alloy revealed only zinc deposition. The major part of copper on the root surfaces is assumed to arise from corrosion of the dowels, and has been transported to the surface by diffusion through the dential tubuli. Zinc in the volume analysed is a constituent of dentin tissue as well as a corrosion product of the brass dowel. Part of the zinc level could also be ascribed to erosion of the zinc phosphate cement matrix. The volumes analysed were (25×25×25)μm 3. The levels of copper, mercury and zinc on the tooth root surfaces attained values up to about 200, 20 and 600 ppm, respectively.

  15. Non-classical crystallization of thin films and nanostructures in CVD and PVD processes

    CERN Document Server

    Hwang, Nong Moon

    2016-01-01

    This book provides a comprehensive introduction to a recently-developed approach to the growth mechanism of thin films and nanostructures via chemical vapour deposition (CVD). Starting from the underlying principles of the low pressure synthesis of diamond films, it is shown that diamond growth occurs not by individual atoms but by charged nanoparticles. This newly-discovered growth mechanism turns out to be general to many CVD and some physical vapor deposition (PVD) processes. This non-classical crystallization is a new paradigm of crystal growth, with active research taking place on growth in solution, especially in biomineralization processes. Established understanding of the growth of thin films and nanostructures is based around processes involving individual atoms or molecules. According to the author’s research over the last two decades, however, the generation of charged gas phase nuclei is shown to be the rule rather than the exception in the CVD process, and charged gas phase nuclei are actively ...

  16. Fermented dairy food and CVD risk.

    Science.gov (United States)

    Tapsell, Linda C

    2015-04-01

    Fermented dairy foods such as yoghurt and cheese are commonly found in the Mediterranean diet. Recent landmark research has confirmed the effect of the Mediterranean diet on reducing the CVD risk, but the relative contributions of fermented dairy foods have not been fully articulated. The present study provides a review of the relationship between fermented dairy foods consumption and CVD risk in the context of the whole diet. Studies show that people who eat healthier diets may be more likely to consume yoghurt, so there is a challenge in attributing separate effects to yoghurt. Analyses from large population studies list yoghurt as the food most negatively associated with the risk of weight gain (a problem that may lead to CVD). There is some suggestion that fermented dairy foods consumption (yoghurt or cheese) may be associated with reduced inflammatory biomarkers associated with the development of CVD. Dietary trials suggest that cheese may not have the same effect on raising LDL-cholesterol levels as butter with the same saturated fat content. The same might be stated for yoghurt. The use of different probiotic cultures and other aspects of study design remain a problem for research. Nevertheless, population studies from a range of countries have shown that a reduced risk of CVD occurs with the consumption of fermented dairy foods. A combination of evidence is necessary, and more research is always valuable, but indications remain that fermented dairy foods such as cheese and yoghurt are integral to diets that are protective against CVD.

  17. Yb2Si2O7 Environmental Barrier Coatings Deposited by Various Thermal Spray Techniques: A Preliminary Comparative Study

    Science.gov (United States)

    Bakan, Emine; Marcano, Diana; Zhou, Dapeng; Sohn, Yoo Jung; Mauer, Georg; Vaßen, Robert

    2017-08-01

    Dense, crack-free, uniform, and well-adhered environmental barrier coatings (EBCs) are required to enhance the environmental durability of silicon (Si)-based ceramic matrix composites in high pressure, high gas velocity combustion atmospheres. This paper represents an assessment of different thermal spray techniques for the deposition of Yb2Si2O7 EBCs. The Yb2Si2O7 coatings were deposited by means of atmospheric plasma spraying (APS), high-velocity oxygen fuel spraying (HVOF), suspension plasma spraying (SPS), and very low-pressure plasma spraying (VLPPS) techniques. The initial feedstock, as well as the deposited coatings, were characterized and compared in terms of their phase composition. The as-sprayed amorphous content, microstructure, and porosity of the coatings were further analyzed. Based on this preliminary investigation, the HVOF process stood out from the other techniques as it enabled the production of vertical crack-free coatings with higher crystallinity in comparison with the APS and SPS techniques in atmospheric conditions. Nevertheless, VLPPS was found to be the preferred process for the deposition of Yb2Si2O7 coatings with desired characteristics in a controlled-atmosphere chamber.

  18. Novel Geochemical Techniques Integrated In Exploration for Uranium Deposits at Depth

    International Nuclear Information System (INIS)

    Kyser, Kurt

    2014-01-01

    Recent results in the use of geochemistry in detecting deep uranium deposits: (1) Map element distributions in and around deposits to assess the total chemical environment associated with the deposit, (2) Use element tracing with isotopic compositions in surface media to detect specific components from uranium deposits at depth, (3) Capitalize on element mobility across the geosphere-biosphere interface to enhance exploration using select media, (4) Geochemical data from drill core or surface media can enhance target identification when integrated with geophysical data.

  19. Industrial science and technology research and development project of university cooperative type in fiscal 2000. Report on achievements in semiconductor device manufacturing processes using Cat-CVD method (Semiconductor device manufacturing processes using Cat-CVD method); 2000 nendo daigaku renkeigata sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (Cat-CVD ho ni yoru handotai device seizo process)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The catalytic chemical vapor deposition (Cat-CVD) method is a low-temperature thin film depositing technology that can achieve improvement in quality of semiconductor thin films and can perform inexpensive film deposition in a large area. The present project is composed of the basic research and development theme and the demonstrative research and development theme for the Cat-CVD method. This report summarizes the achievements in fiscal 2000 centering on the former theme. Discussions were given on the following five areas: 1) simulation on film thickness distribution in the Cat-CVD method, 2) life extension by preventing the catalyst converting into silicide and development of a catalyst integrated shear head, 3) vapor diagnosis in the film forming process by the Cat-CVD method using silane, hydrogen and ammonia, 4) a technology for high-speed deposition of hydrogenated amorphous silicon films for solar cells using the Cat-CVD method, and the low-temperature silicon oxide nitriding technology using heated catalysts, and 5) discussions on compatibility of transparent oxide electrode materials to the process of manufacturing thin-film silicon-based solar cells by using the Cat-CVD method. (NEDO)

  20. Development and characterization of protective nickel coatings by CVD process for non-ferrous metals and alloys

    International Nuclear Information System (INIS)

    Haq, A.U.

    2012-01-01

    Objective of this thesis is the formation of adhesive and corrosion resistant nickel film on aluminum, aluminum-lithium (Li 0.5 %) alloy and copper substrates by chemical vapor deposition (CVD) technique. Different surface preparation treatments such as electropolishing, anodizing and pickling are applied to the aforementioned substrates and its effect on the adhesion and corrosion resistance of nickel coating is studied. Nickel coating is deposited on different substrates by using already optimized parameters of 190-200 degree C deposition temperature, 9-8 x 10/sup -1/ Torr pressure during deposition, pure nickel-tetra-carbonyl gas, and induction heating source and 5 minutes deposition time. Substrates subjected to pickling treatment show excellent adhesion of nickel coating with a value of 5B based on ASTM standard while electropolished substrates show valve of 3B. XRD characterization of the nickel film show characteristic peaks of nickel confirming its phase purity. The SEM images show that nickel coating follows the surface features of the substrate. The pickled surface results in film with rough morphology than electropolished or anodized surface. The corrosion resistance of both uncoated and coated substrates is studied by monitoring its open circuit potential in different electrolytes (brine solution, sea and distilled water) at different temperatures. All substrates coated with nickel show 120-400mV potential difference compare with uncoated substrates in different electrolytes. (author)

  1. Recent Results from Beam Tests of 3D and Pad pCVD Diamond Detectors

    CERN Document Server

    Wallny, Rainer

    2017-01-01

    Results from prototypes of a detector using chemical vapor deposited (CVD) diamond with embedded resistive electrodes in the bulk forming a 3D diamond device are presented. A detector system consisting of 3D devices based on poly-crystalline CVD (pCVD) diamond was connected to a multi-channel readout and successfully tested in a 120 GeV/c proton beam at CERN proving for the first time the feasibility of the 3D detector concept in pCVD for particle tracking applications. We also present beam test results on the dependence of signal size on incident particle rate in charged particle detectors based on poly-crystalline CVD diamond. The detectors were tested in a 260 MeV/c pion beam over a range of particle fluxes from 2 kHz/cm2 to 10 MHz/cm2 . The pulse height of the sensors was measured with pad readout electronics at a peaking time of 7 ns. Our data from the 2015 beam tests at PSI indicate that the pulse height of poly-crystalline CVD diamond sensor irradiated to 5×1014 neq/cm2 is independent of particle flux...

  2. Ion beam induced surface graphitization of CVD diamond for x-ray beam position monitor applications

    International Nuclear Information System (INIS)

    Liu, Chian; Shu, D.; Kuzay, T.M.; Wen, L.; Melendres, C.A.; Argonne National Lab., IL

    1996-01-01

    The Advanced Photon Source at ANL is a third-generation synchrotron facility that generates powerful x-ray beams on its undulator beamlines. It is important to know the position and angle of the x- ray beam during experiments. Due to very high heat flux levels, several patented x-ray beam position monitors (XBPM) exploiting chemical vapor deposition (CVD) diamond have been developed. These XBPMs have a thin layer of low-atomic-mass metallic coating so that photoemission from the x rays generate a minute but measurable current for position determination. Graphitization of the CVD diamond surface creates a very thin, intrinsic and conducting layer that can stand much higher temperatures and minimal x-ray transmission losses compared to the coated metallic layers. In this paper, a laboratory sputter ion source was used to transform selected surfaces of a CVD diamond substrate into graphite. The effect of 1-5 keV argon ion bombardment on CVD diamond surfaces at various target temperatures from 200 to 500 C was studied using Auger electron spectroscopy and in-situ electrical resistivity measurements. Graphitization after the ion bombardment has been confirmed and optimum conditions for graphitization studied. Raman spectroscopy was used to identify the overall diamond structure in the bulk of CVD diamond substrate after the ion bombardments. It was found that target temperature plays an important role in stability and electrical conductivity of the irradiated CVD diamonds

  3. Electrospray ionization deposition of BSA under vacuum conditions

    Science.gov (United States)

    Hecker, Dominic; Gloess, Daniel; Frach, Peter; Gerlach, Gerald

    2015-05-01

    Vacuum deposition techniques like thermal evaporation and CVD with their precise layer control and high layer purity often cannot be applied for the deposition of chemical or biological molecules. The molecules are usually decomposed by heat. To overcome this problem, the Electrospray ionization (ESI) process known from mass spectroscopy is employed to transfer molecules into vacuum and to deposit them on a substrate. In this work, a homemade ESI tool was used to deposit BSA (Bovine serum albumin) layers with high deposition rates. Solutions with different concentrations of BSA were prepared using a methanol:water (MeOH:H2O) mixture (1:1) as solvent. The influence of the substrate distance on the deposition rate and on the transmission current was analyzed. Furthermore, the layer thickness distribution and layer adhesion were investigated.

  4. Controlling the resistivity gradient in chemical vapor deposition-deposited aluminum-doped zinc oxide

    NARCIS (Netherlands)

    Ponomarev, M. V.; Verheijen, M. A.; Keuning, W.; M. C. M. van de Sanden,; Creatore, M.

    2012-01-01

    Aluminum-doped ZnO (ZnO:Al) grown by chemical vapor deposition (CVD) generally exhibit a major drawback, i.e., a gradient in resistivity extending over a large range of film thickness. The present contribution addresses the plasma-enhanced CVD deposition of ZnO: Al layers by focusing on the control

  5. Studies of CdS/CdTe interface: Comparison of CdS films deposited by close space sublimation and chemical bath deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jun-feng, E-mail: pkuhjf@bit.edu.cn [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); School of Physics, Beijing Institute of Technology, Beijing 100081 (China); Fu, Gan-hua; Krishnakumar, V.; Schimper, Hermann-Josef [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Jaegermann, Wolfram [Institute of Materials Science, Darmstadt University of Technology, Petersenstr. 23, 64287 Darmstadt (Germany); Besland, M.P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

    2015-05-01

    The CdS layers were deposited by two different methods, close space sublimation (CSS) and chemical bath deposition (CBD) technique. The CdS/CdTe interface properties were investigated by transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). The TEM images showed a large CSS-CdS grain size in the range of 70-80 nm. The interface between CSS-CdS and CdTe were clear and sharp, indicating an abrupt hetero-junction. On the other hand, CBD-CdS layer had much smaller grain size in the 5-10 nm range. The interface between CBD-CdS and CdTe was not as clear as CSS-CdS. With the stepwise coverage of CdTe layer, the XPS core levels of Cd 3d and S 2p in CSS-CdS had a sudden shift to lower binding energies, while those core levels shifted gradually in CBD-CdS. In addition, XPS depth profile analyses indicated a strong diffusion in the interface between CBD-CdS and CdTe. The solar cells prepared using CSS-CdS yielded better device performance than the CBD-CdS layer. The relationships between the solar cell performances and properties of CdS/CdTe interfaces were discussed. - Highlights: • Studies of CdS deposited by close space sublimation and chemical bath deposition • An observation of CdS/CdTe interface by transmission electron microscope • A careful investigation of CdS/CdTe interface by X ray photoelectron spectra • An easier diffusion at the chemical bath deposition CdS and CdTe interface.

  6. Control of Reaction Surface in Low Temperature CVD to Enhance Nucleation and Conformal Coverage

    Science.gov (United States)

    Kumar, Navneet

    2009-01-01

    The Holy Grail in CVD community is to find precursors that can afford the following: good nucleation on a desired substrate and conformal deposition in high AR features. Good nucleation is not only necessary for getting ultra-thin films at low thicknesses; it also offers films that are smooth at higher thickness values. On the other hand,…

  7. The effect of percentage carbonon the CVD coating of plain carbon ...

    African Journals Online (AJOL)

    Two steels En 3 and En 39 were given a TiC-TiN CVD coating in the carburized and uncarburized conditions. The continuity of the coatings and their adherance to the substrate were examined. The thickness of the deposited coatings were also measured, their adherence to the substrate and their thickness was off ected by ...

  8. Large-area selective CVD epitaxial growth of Ge on Si substrates

    NARCIS (Netherlands)

    Sammak, A.; De Boer, W.; Nanver, L.K.

    2011-01-01

    Selective epitaxial growth of crystalline Ge on Si in a standard ASM Epsilon 2000 CVD reactor is investigated for the fabrication of Ge p+n diodes. At the deposition temperature of 700?C, most of the lattice mismatch-defects are trapped within first 300nm of Ge growth and good quality single crystal

  9. Hydrogen termination of CVD diamond films by high-temperature annealing at atmospheric pressure

    NARCIS (Netherlands)

    Seshan, V.; Ullien, D.; Castellanos-Gomez, A.; Sachdeva, S.; Murthy, D.H.K.; Savenije, T.J.; Ahmad, H.A.; Nunney, T.S.; Janssens, S.D.; Haenen, K.; Nesládek, M.; Van der Zant, H.S.J.; Sudhölter, E.J.R.; De Smet, L.C.P.M.

    2013-01-01

    A high-temperature procedure to hydrogenate diamond films using molecular hydrogen at atmospheric pressure was explored. Undoped and doped chemical vapour deposited (CVD) polycrystalline diamond films were treated according to our annealing method using a H2 gas flow down to ?50 ml/min (STP) at

  10. Optimization of CVD parameters for long ZnO NWs grown on ITO

    Indian Academy of Sciences (India)

    The optimization of chemical vapour deposition (CVD) parameters for long and vertically aligned (VA) ZnO nanowires (NWs) were investigated. Typical ZnO NWs as a single crystal grown on indium tin oxide (ITO)-coated glass substrate were successfully synthesized. First, the conducted side of ITO–glass substrate was ...

  11. Computation of flow and thermal fields in a model CVD reactor

    Indian Academy of Sciences (India)

    Mixing of coaxial jets within a tube in the presence of blockage has been numerically studied. This configuration is encountered during the modelling of flow and heat transfer in CVD (chemical vapour deposition) reactors. For the conditions prevailing in the reactor, the Reynolds numbers are low and flow can be taken to be ...

  12. Industrial implementation of plasma deposition using the expanding thermal plasma technique

    NARCIS (Netherlands)

    Sanden, van de M.C.M.; Oever, van den P.J.; Creatore, M.; Schaepkens, M.; Miebach, T.; Iacovangelo, C.D.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Kessels, W.M.M.

    2004-01-01

    Two successful industrial implementations of the expanding thermal plasma setup, a novel plasma source, obtaining high deposition rate are discussed. The Ar/O2/hexamethyldisiloxane and Ar/O2/octamethyl-cyclosiloxane-fed expanding thermal plasma setup is used to deposit scratch resistant silicone

  13. Ac conductivity and dielectric spectroscopy studies on tin oxide thin films formed by spray deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barış, Behzad, E-mail: behzadbaris@gmail.com

    2014-04-01

    Au/tin oxide/n-Si (1 0 0) structure has been created by forming a tin oxide (SnO{sub 2}) on n-type Si by using the spray deposition technique. The ac electrical conductivity (σ{sub ac}) and dielectric properties of the structure have been investigated between 30 kHz and 1 MHz at room temperature. The values of ε', ε″, tanδ, σ{sub ac}, M' and M″ were determined as 1.404, 0.357, 0.253, 1.99×10{sup −7} S/cm, 0.665 and 0.168 for 1 MHz and 6.377, 6.411, 1.005, 1.07×10{sup −7} S/cm, 0.077 and 0.078 for 30 kHz at zero bias, respectively. These changes were attributed to variation of the charge carriers from the interface traps located between semiconductor and metal in the band gap. It is concluded that the values of the ε', ε″ and tanδ increase with decreasing frequency while a decrease is seen in σ{sub ac} and the real (M') and imaginary (M″) components of the electrical modulus. The M″ parameter of the structure has a relaxation peak as a function of frequency for each examined voltage. The relaxation time of M″(τ{sub M″}) varies from 0.053 ns to 0.018 ns with increasing voltage. The variation of Cole–Cole plots of the sample shows that there is one relaxation.

  14. Study on the low leakage current of an MIS structure fabricated by ICP-CVD

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, S-Y; Hon, M-H [Department of Materials Science and Engineering, National Cheng Kung University, 1, Ta-Hsueh Road, Tainan, 701 Taiwan (China); Lu, Y-M, E-mail: ymlumit@yahoo.com.tw

    2008-03-15

    As the dimensions of electric devices continue to shrink, it is becoming increasingly important to understand how to obtain good quality gate oxide film materials wilth higher carrier mobility, lower leakage current and greater reliability. All of them have become major concerns in the fabrication of thin film oxide transistors. A novel film deposition method called Inductively Coupled Plasma-Chemical Vapor Deposition (ICP-CVD) has received attraction in the semiconductor industry, because it can be capable of generating high density plasmas at extremely low temperature, resulting in less ion bombardment of the material surface. In this work, we present the results of crystallized silicon dioxide films deposited by inductively coupled plasma chemical vapor deposition technique at an extremely low temperature of 90 deg. C. The value of the refractive index of the crystallized ICP-CVD SiO{sub 2} film depends on the r.f. power of the ICP system, and approximates to be 1.46. This value is comparable to that of SiO{sub 2} films prepared by thermal oxidation. As the r.f. power of ICP applied more than 1250 Watts, still only the (111) diffraction peak is observed by XRD, which implies a very strong preferred orientation or single crystal structure. Too low or too high r.f. power both produces amorphous SiO{sub 2} films. From the I-V curve, the MIS device with a SiO{sub 2} dielectric film has a lower leakage current density of 6.8x10{sup -8}A/cm{sup 2} at 1V as the film prepared at 1750 watts. The highest breakdown field in this study is 15.8 MV/cm. From the FTIR analysis, it was found that more hydrogen atoms incorporate into films and form Si-OH bonds as the r.f. power increases. The existence of Si-OH bonds leads to a poor reliability of the MIS device.

  15. A comparative study of ultraviolet photoconductivity relaxation in zinc oxide (ZnO) thin films deposited by different techniques

    International Nuclear Information System (INIS)

    Yadav, Harish Kumar; Gupta, Vinay

    2012-01-01

    Photoresponse characteristics of ZnO thin films deposited by three different techniques namely rf diode sputtering, rf magnetron sputtering, and electrophoretic deposition has been investigated in the metal-semiconductor-metal (MSM) configuration. A significant variation in the crystallinity, surface morphology, and photoresponse characteristics of ZnO thin film with change in growth kinetics suggest that the presence of defect centers and their density govern the photodetector relaxation properties. A relatively low density of traps compared to the true quantum yield is found very crucial for the realization of practical ZnO thin film based ultraviolet (UV) photodetector.

  16. A comparative study of ultraviolet photoconductivity relaxation in zinc oxide (ZnO) thin films deposited by different techniques

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Harish Kumar; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110 007 (India)

    2012-05-15

    Photoresponse characteristics of ZnO thin films deposited by three different techniques namely rf diode sputtering, rf magnetron sputtering, and electrophoretic deposition has been investigated in the metal-semiconductor-metal (MSM) configuration. A significant variation in the crystallinity, surface morphology, and photoresponse characteristics of ZnO thin film with change in growth kinetics suggest that the presence of defect centers and their density govern the photodetector relaxation properties. A relatively low density of traps compared to the true quantum yield is found very crucial for the realization of practical ZnO thin film based ultraviolet (UV) photodetector.

  17. Development of Fe-AI CVD coatings as tritium permeation barrier

    International Nuclear Information System (INIS)

    Chabrol, C.; Schuster, F.; Le Marois, G.; Serra, E.

    1998-01-01

    A specific method of pack-cementation has been developed in order to perform a CVD deposition of Fe-Al alloys on a martensitic steel at a temperature which respects its mechanical properties ( 2 Al 5 intermetallic phases thanks to a low pressure deposition and using a special cement containing Fe and Al. These coatings coated with an Al 2 O 3 top layer drastically reduce the permeation rate of deuterium with regards to the uncoated substrate. (authors)

  18. Heating effect of substrate of pulsed laser ablation deposition technique towards the orientation of carbon microstructure

    International Nuclear Information System (INIS)

    Choy, L.S.; Irmawati Ramli; Noorhana Yahya; Abdul Halim Shaari

    2009-01-01

    Full text: Carbon thin film has been successfully deposited by second harmonic Nd:YAG pulsed laser ablation deposition, PLAD. The topology and morphology of the deposited layers was studied by scanning electron microscopy (SEM) whereas emission dispersion X-ray (EDX) was used to determine the existence of elements that constitutes the microstructure. Substrate heated at 500 degree Celsius during the laser ablation showed the most homogenous lollipop microstructure as compared to mainly pillars of microstructure ablated at lower substrate temperature. It is found that this also avoid further diffusion of carbon into catalyst in forming iron carbide. (author)

  19. Continuous, Highly Flexible, and Transparent Graphene Films by Chemical Vapor Deposition for Organic Photovoltaics

    KAUST Repository

    Gomez De Arco, Lewis; Zhang, Yi; Schlenker, Cody W.; Ryu, Koungmin; Thompson, Mark E.; Zhou, Chongwu

    2010-01-01

    We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD

  20. Influence of solution deposition rate on properties of V{sub 2}O{sub 5} thin films deposited by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Abd–Alghafour, N. M., E-mail: na2013bil@gmail.com [Iraqi Ministry of Education, Anbar (Iraq); Ahmed, Naser M.; Hassan, Zai; Mohammad, Sabah M. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, University Sains Malaysia,11800 Penang (Malaysia)

    2016-07-19

    Vanadium oxide (V{sub 2}O{sub 5}) thin films were deposited on glass substrates by using a cost-efficient spray pyrolysis technique. The films were grown at 350° through thermal decomposition of VCl{sub 3} in deionized water with different solution spray rates. The high resolution X-ray diffraction results revealed the formation of nanocrystalline films having orthorhombic structures with preferential orientation along (101) direction. The spray rate influenced the surface morphology and crystallite size of the films. The crystallite size was found to increase whereas the micro-strain was decreased by increasing the spray deposition rates. The increase in crystallite size and decrease in the macrostrain resulted in an improvement in the films’ crystallinity. The UV-Visible spectroscopy analysis indicated that the average transmittance of all films lies in the range 75-80 %. The band gap of V{sub 2}O{sub 5} film was decreased from 2.65 to 2.46 eV with increase of the spray deposition rate from 5 ml/min to 10 ml/min. first, second, and third level headings (first level heading).

  1. Evaluation of Co-rich manganese deposits by image analysis and photogrammetric techniques

    Digital Repository Service at National Institute of Oceanography (India)

    Yamazaki, T.; Sharma, R.; Tsurusaki, K.

    Stereo-seabed photographs of Co-rich manganese deposits on a mid-Pacific seamount, were analysed using an image analysis software for coverage estimation and size classification of nodules, and a photogrammetric software for calculation of height...

  2. Atmospheric deposition of trace elements around Ulan Bator city studied by moss and lichen biomonitoring technique and INAA

    International Nuclear Information System (INIS)

    Ganbold, G.; Gehrbish, Sh.; Tsehndehehkhuu, Ts.; Gundorina, S.F.; Frontas'eva, M.V.; Ostrovnaya, T.M.; Pavlov, S.S.

    2005-01-01

    For the first time the moss and lichen biomonitoring technique has been applied to air pollution in Mongolia (Ulan-Bator, the capital city). INAA at the IBR-2 reactor has made it possible to determine the content of 35 elements in moss and lichen biomonitors. Samples collected at sites located 10-15 km from the center of Ulan-Bator were analyzed by Instrumental Neutron Activation Analysis (INAA) using epithermal neutrons. The mosses (Rhytidium rugosum, Thuidium abietinum, Entodon concinnus) and lichens (Cladonia stellaris, Parmelia separata) were used to study the atmospheric deposition of trace elements. It was shown that the suggested types of mosses could be used as suitable biomonitors to estimate the concentration levels of heavy metals and trace elements in Ulan-Bator atmospheric deposition. The results are compared to the data of atmospheric deposition of some European countries

  3. Atmospheric Deposition of Trace Elements Around Ulan-Bator City Studied by Moss and Lichen Biomonitoring Technique and INAA

    CERN Document Server

    Ganbold, G; Gundorina, S F; Frontasyeva, M V; Ostrovnaya, T M; Pavlov, S S; Tsendeekhuu, T

    2005-01-01

    For the first time the moss and lichen biomonitoring technique has been applied to air pollution in Mongolia (Ulan-Bator, the capital city). INAA at the IBR-2 reactor has made it possible to determine the content of 35 elements in moss and lichen biomonitors. Samples collected at sites located 10-15 km from the center of Ulan-Bator were analyzed by Instrumental Neutron Activation Analysis (INAA) using epithermal neutrons. The mosses (\\textit{Rhytidium rugosum}, \\textit{Thuidium abietinum}, \\textit{Entodon concinnus}) and lichens (\\textit{Cladonia stellaris}, \\textit{Parmelia separata}) were used to study the atmospheric deposition of trace elements. It was shown that the suggested types of mosses could be used as suitable biomonitors to estimate the concentration levels of heavy metals and trace elements in Ulan-Bator atmospheric deposition. The results are compared to the data of atmospheric deposition of some European countries.

  4. Suppression of hydrogenated carbon film deposition by scavenger techniques and their application to the tritium inventory control of fusion devices

    International Nuclear Information System (INIS)

    Tabares, F.L.; Tafalla, D.; Tanarro, I.; Herrero, V.J.; Islyaikin, A.; Maffiotte, C.

    2002-01-01

    The well-known radical and ion scavenger techniques of application in amorphous hydrogenated carbon film deposition studies are investigated in relation to the mechanism of tritium and deuterium co-deposition in carbon-dominated fusion devices. A particularly successful scheme results from the injection of nitrogen into methane/hydrogen plasmas for conditions close to those prevailing in the divertor region of present fusion devices. A complete suppression of the a-C : H film deposition has been achieved for N 2 /CH 4 ratios close to one in methane (5%)/hydrogen DC plasma. The implications of these findings in the tritium retention control in future fusion reactors are addressed. (author). Letter-to-the-editor

  5. Anisotropy and dimensional characteristics in CVD route Y1Ba2Cu3O7-δ

    International Nuclear Information System (INIS)

    Watanabe, K.; Kobayashi, N.; Awaji, S.; Yamane, H.; Hirai, T.; Muto, Y.

    1993-01-01

    The anisotropic behaviors of the upper critical field B c2 and the critical current density J c were investigated in Y 1 Ba 2 Cu 3 O 7-δ films prepared by a chemical vapor deposition (CVD) route. The angular dependence of J c at fixed temperature, the field dependence of J c at fixed angle, and the temperature dependence of J c at fixed field were measured. The obtained results were explored in terms of the dimensional superconducting characteristics. The important information on the anisotropic behaviors of J c in CVD-Y 1 Ba 2 Cu 3 O 7-δ was discussed from a viewpoint of the flux pinning. (orig.)

  6. MgO by injection CVD

    International Nuclear Information System (INIS)

    Abrutis, A.; Kubilius, V.; Teiserkis, A.; Bigelyte, V.; Vengalis, B.; Jukna, A.; Butkute, R.

    1997-01-01

    Epitaxial YBa 2 Cu 3 O 7 layers with 45 in-plane orientation have been grown by injection CVD on MgO substrates polished off-axis to within 1.4-1.9 of the [100] direction. This new single-source CVD process is based on computer-controlled injection of precise microdoses of a metal-organic precursor solution into a CVD reactor. A wide range of solution compositions was tested to investigate compositional effects on phase purity, surface morphology, texturing and superconducting properties of the prepared films. The highest quality films with pure 45 texture had a smooth surface, zero resistance T c (R=0) of 88-89 K, and critical current density J c (77 K) above 10 6 A/cm 2 . (orig.) and critical current density J c (77 K) above 10 6 A/cm 2 . (orig.)

  7. Functional materials - Study of process for CVD SiC/C composite material

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Doo Jin; Wang, Chae Chyun; Lee, Young Jin; Oh, Byung Jun [Yonsei University, Seoul (Korea)

    2000-04-01

    The CVD SiC coating techniques are the one of high functional material manufactures that improve the thermal, wear, oxidization and infiltration resistance of the surface of raw materials and extend the life of material. Silicon carbide films have been grown onto graphite substrates by low pressure chemical vapor deposition using MTS(CH{sub 3}SiCl{sub 3}) as a source precursor and H{sub 2} or N{sub 2} as a diluent gas. The experiments for temperature and diluent gas addition changes were performed. The effect of temperature from 900 deg. C to 1350 deg. C and the alteration of diluent gas species on the growth rate and structure of deposits have been studied. The experimental results showed that the deposition rate increased with increasing deposition temperature irrespective of diluent gases and reactant depletion effect increased especially at H{sub 2} diluent gas ambient. As the diluent gas added, the growth rate decreased parabolically. For N{sub 2} addition, surface morphology of leaf-like structure appeared, and for H{sub 2}, faceted structure at 1350 deg. C. The observed features were involved by crystalline phase of {beta}-SiC and surface composition with different gas ambient. We also compared the experimental results of the effect of partial pressure on the growth rate with the results of theoretical approach based on the Langmuir-Hinshelwood model. C/SiC composites were prepared by isothermal chemical vapor infiltration (ICVI). In order to fabricate the more dense C/SiC composites, a novel process of the in-situ whisker growing and filling during ICVI was devised, which was manipulated by alternating dilute gas species. The denser C/SiC composites were successfully prepared by the novel process comparing with the conventional ICVI process. 64 refs., 36 figs., 5 tabs. (Author)

  8. Síntesis de materiales cerámicos mediante técnicas químicas en fase vapor (CVD

    Directory of Open Access Journals (Sweden)

    Gómez-Aleixandre, C.

    2003-02-01

    Full Text Available Chemical vapour deposition (CVD has been successfully used for the synthesis of a large variety of compounds. Initially the technique was developed for microelectronic applications and then was widespread used for the preparation of hard coatings, optoelectronic and superconductor materials. Among the characteristics inherent to the CVD technique it is worth mentioning the preparation of homogeneous deposits at relatively low temperatures mostly when the reaction is electrically or laser plasma or photon activated. New materials with given characteristics can be produced by properly choosing the reactant gas mixture as well as its relative composition. The presentation will be also focussed onto the deposition of different materials, such as carbon films (both crystalline, and amorphous with diamond-like properties, deposited by plasma assisted CVD techniques using methane and hydrogen gas mixtures. Also, the deposition of binary compounds, as boron nitride will be reviewed. Finally, the experimental requirements for obtaining new ternary compounds from the system Si-B-N-C (i.e.: CBN, SiBN will be discussed. The properties of these materials strongly depend on their composition and structure. Therefore, by adequate selection of the experimental parameters, it is possible to obtain ternary compounds with tailored characteristics.

    Actualmente, la técnica de CVD está siendo utilizada en la síntesis de una gran variedad de compuestos cerámicos, generalmente en forma de capa delgada. La técnica, desarrollada inicialmente para su aplicación en microelectrónica, ha sido después utilizada con éxito en otras áreas de gran actividad científica y tecnológica (recubrimientos duros, dispositivos optoelectrónicos, materiales superconductores, etc.. Entre las características más positivas de las técnicas de CVD, cabe destacar la obtención de depósitos homogéneos a temperaturas relativamente bajas, sobre todo cuando la activación de

  9. Controlling the quality of nanocrystalline silicon made by hot-wire chemical vapor deposition by using a reverse H2 profiling technique

    NARCIS (Netherlands)

    Li, H. B. T.; Franken, R.H.; Stolk, R.L.; van der Werf, C.H.M.; Rath, J.K.; Schropp, R.E.I.

    2008-01-01

    Hydrogen profiling, i.e., decreasing the H2 dilution during deposition, is a well-known technique to maintain a proper crystalline ratio of the nanocrystalline (nc-Si:H) absorber layers of plasma-enhanced chemical vapor-deposited (PECVD) thin film solar cells. With this technique a large increase in

  10. Recent results on CVD diamond radiation sensors

    Science.gov (United States)

    Weilhammer, P.; Adam, W.; Bauer, C.; Berdermann, E.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; v. d. Eijk, R.; van Eijk, B.; Fallou, A.; Fish, D.; Fried, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knopfle, K. T.; Krammer, M.; Manfredi, P. F.; Meier, D.; LeNormand; Pan, L. S.; Pernegger, H.; Pernicka, M.; Plano, R.; Re, V.; Riester, J. L.; Roe, S.; Roff; Rudge, A.; Schieber, M.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; RD 42 Collaboration

    1998-02-01

    CVD diamond radiation sensors are being developed for possible use in trackers in the LHC experiments. The diamond promises to be radiation hard well beyond particle fluences that can be tolerated by Si sensors. Recent results from the RD 42 collaboration on charge collection distance and on radiation hardness of CVD diamond samples will be reported. Measurements with diamond tracking devices, both strip detectors and pixel detectors, will be discussed. Results from beam tests using a diamond strip detector which was read out with fast, 25 ns shaping time, radiation-hard pipeline electronics will be presented.

  11. Preparation of tantalum-based alloys by a unique CVD process

    International Nuclear Information System (INIS)

    Bryant, W.A.; Meier, G.H.

    1975-01-01

    One of the greatest problems associated with the formation of alloys by CVD is the achievement of compositional uniformity. In a typical deposition apparatus, wherein reactant gases are made to flow over the substrate in a continuous manner, this nonuniformity is inherent for two reasons. The composition of the gas stream changes as a function of its distance of travel over the substrate and, inevitably, one of the reactant compounds is more easily reduced than the other(s). This problem was overcome by the development of a process termed ''pulsing.'' In it reactant gases are periodically injected into a previously evacuated reaction chamber where they cover the substrate almost instantaneously. By this technique, gas composition at any point in time is not dependent upon distance along the substrate. Formation of alternating layers of the alloy components and subsequent homogenization allows the formation of an alloy of uniform composition with the composition being determined by the duration and relative number of the various cycles. This technique has been utilized to produce dense alloys with the composition Ta--10 wt percent W by depositing alternating layers of TA and W by the hydrogen reduction of TaCl 5 and WCl 6 . The alloys were uniform in thickness and composition over lengths in excess of 20 cm and the target composition was attained. A similar attempt to deposit a Ta--8 wt percent W--2 wt percent Hf alloy was unsuccessful because of the difficulty in reducing HfCl 4 at temperatures below those at which gas phase nucleation of Ta and W occurred (1200 and 1175 0 C respectively). 7 fig

  12. Combined sonochemical/CVD method for preparation of nanostructured carbon-doped TiO{sub 2} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Rasoulnezhad, Hossein [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Kavei, Ghassem, E-mail: kaveighassem@gmail.com [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Ahmadi, Kamran [Semiconductor Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of); Rahimipour, Mohammad Reza [Ceramic Department, Materials and Energy Research Center (MERC), Karaj (Iran, Islamic Republic of)

    2017-06-30

    Highlights: • Combination of sonochemical and CVD methods for preparation of nanostructured carbon-doped TiO{sub 2} thin film on glass substrate, for the first time. • High transparency, monodispersity and homogeneity of the prepared thin films. • Preparation of the carbon-doped TiO{sub 2} thin films with nanorod and nanosphere morphologies. - Abstract: The present work reports the successful synthesis of the nanostructured carbon-doped TiO{sub 2} thin films on glass substrate by combination of chemical vapor deposition (CVD) and ultrasonic methods, for the first time. In this method the ultrasound waves act as nebulizer for converting of sonochemically prepared TiO{sub 2} sol to the mist particles. These mist particles were thermally decomposed in subsequent CVD chamber at 320 °C to produce the carbon-doped TiO{sub 2} thin films. The obtained thin films were characterized by means of X-ray Diffraction (XRD), Raman spectroscopy, diffuse reflectance spectroscopy (DRS), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and scanning electron microscopy (SEM) techniques. The results show that the prepared thin films have anatase crystal structure and nanorod morphology, which calcination of them at 800 °C results in the conversion of nanorods to nanoparticles. In addition, the prepared samples have high transparency, monodispersity and homogeneity. The presence of the carbon element in the structure of the thin films causes the narrowing of the band-gap energy of TiO{sub 2} to about 2.8 eV, which results in the improvement of visible light absorption capabilities of the thin film.

  13. Novel GIMS technique for deposition of colored Ti/TiO₂ coatings on industrial scale

    Directory of Open Access Journals (Sweden)

    Zdunek Krzysztof

    2016-03-01

    Full Text Available The aim of the present paper has been to verify the effectiveness and usefulness of a novel deposition process named GIMS (Gas Injection Magnetron Sputtering used for the flrst time for deposition of Ti/TiO₂ coatings on large area glass Substrates covered in the condition of industrial scale production. The Ti/TiO₂ coatings were deposited in an industrial System utilizing a set of linear magnetrons with the length of 2400 mm each for covering the 2000 × 3000 mm glasses. Taking into account the speciflc course of the GIMS (multipoint gas injection along the magnetron length and the scale of the industrial facility, the optical coating uniformity was the most important goal to check. The experiments on Ti/TiO₂ coatings deposited by the use of GIMS were conducted on Substrates in the form of glass plates located at the key points along the magnetrons and intentionally non-heated during any stage of the process. Measurements of the coatings properties showed that the thickness and optical uniformity of the 150 nm thick coatings deposited by GIMS in the industrial facility (the thickness differences on the large plates with 2000 mm width did not exceed 20 nm is fully acceptable form the point of view of expected applications e.g. for architectural glazing.

  14. Assessment of multiple geophysical techniques for the characterization of municipal waste deposit sites

    Science.gov (United States)

    Gaël, Dumont; Tanguy, Robert; Nicolas, Marck; Frédéric, Nguyen

    2017-10-01

    In this study, we tested the ability of geophysical methods to characterize a large technical landfill installed in a former sand quarry. The geophysical surveys specifically aimed at delimitating the deposit site horizontal extension, at estimating its thickness and at characterizing the waste material composition (the moisture content in the present case). The site delimitation was conducted with electromagnetic (in-phase and out-of-phase) and magnetic (vertical gradient and total field) methods that clearly showed the transition between the waste deposit and the host formation. Regarding waste deposit thickness evaluation, electrical resistivity tomography appeared inefficient on this particularly thick deposit site. Thus, we propose a combination of horizontal to vertical noise spectral ratio (HVNSR) and multichannel analysis of the surface waves (MASW), which successfully determined the approximate waste deposit thickness in our test landfill. However, ERT appeared to be an appropriate tool to characterize the moisture content of the waste, which is of prior information for the organic waste biodegradation process. The global multi-scale and multi-method geophysical survey offers precious information for site rehabilitation studies, water content mitigation processes for enhanced biodegradation or landfill mining operation planning.

  15. Comprehensive geophysical survey technique in exploration for deep-buried hydrothermal type uranium deposits in Xiangshan volcanic basin, China

    International Nuclear Information System (INIS)

    Ke, D.

    2014-01-01

    According to recent drilling results, uranium mineralization has been found underground more than 1000 m deep in the Xiangshan volcanic basin, in where uranium exploration has been carried out for over 50 years. This paper presents a comprehensive geophysical survey technique, including audio magnetotelluric method (AMT), high resolution ground magnetic and radon survey, which aim to prospect deep-buried and concealed uranium deposits in Xiangshan volcanic basin. Based on research and application, a comprehensive geophysical technique consisting of data acquisition, processing and interpretation has been established. Concealed rock and ore-controlling structure buried deeper than 1000 m can be detected by using this technique. Moreover, one kind of anti-interference technique of AMT survey is presented, which can eliminate the interference induced by the high-voltage power lines. Result of AMT in Xiangshan volcanic basin is demonstrated as high-low-high mode, which indicates there are three layers in geology. The upper layer with high resistivity is mainly the react of porphyroclastic lava. The middle layer with low resistivity is metamorphic schists or dellenite whereas the lower layer with high resistivity is inferred as granite. The interface between middle and lower layer is recognized as the potential zone for occurrence of uranium deposits. According to the corresponding relation of the resistivity and magnetic anomaly with uranium ore bodies, the tracing model of faults and interfaces between the different rocks, and the forecasting model of advantageous area for uranium deposits have been established. In terms of the forecasting model, some significant sections for uranium deposits were delineated in the west of the Xiangshan volcanic basin. As a result, some achievements on uranium prospecting have been acquired. High grade economic uranium ore bodies have been found in several boreholes, which are located in the forecasted zones. (author)

  16. Cutting characteristics of dental diamond burs made with CVD technology Características de corte de pontas odontológicas diamantadas obtidas pela tecnologia CVD

    Directory of Open Access Journals (Sweden)

    Luciana Monti Lima

    2006-04-01

    Full Text Available The aim of this study was to determine the cutting ability of chemical vapor deposition (CVD diamond burs coupled to an ultrasonic dental unit handpiece for minimally invasive cavity preparation. One standard cavity was prepared on the mesial and distal surfaces of 40 extracted human third molars either with cylindrical or with spherical CVD burs. The cutting ability was compared regarding type of substrate (enamel and dentin and direction of handpiece motion. The morphological characteristics, width and depth of the cavities were analyzed and measured using scanning electron micrographs. Statistical analysis using the Kruskal-Wallis test (p O objetivo deste estudo foi determinar a habilidade de corte das pontas de diamante obtidas pelo processo de deposição química a vapor (CVD associadas ao aparelho de ultra-som no preparo cavitário minimamente invasivo. Uma cavidade padronizada foi preparada nas faces mesial e distal de 40 terceiros molares, utilizando-se pontas de diamante CVD cilíndrica e esférica. A habilidade de corte foi comparada quanto ao tipo de substrato (esmalte e dentina e quanto à direção do movimento realizado com a ponta. As características morfológicas, a largura e profundidade das cavidades foram analisadas e medidas em microscopia eletrônica de varredura. A análise estatística pelo teste de Kruskal-Wallis (p < 0,05 revelou que a largura e profundidade das cavidades foram significativamente maiores em dentina. Cavidades mais largas foram obtidas quando se utilizou a ponta de diamante CVD cilíndrica, e mais profundas quando a ponta esférica foi empregada. A direção do movimento da ponta não influenciou o tamanho das cavidades, sendo os cortes produzidos pelas pontas de diamante CVD precisos e conservadores.

  17. Structural and electrical characterizations of BiFeO{sub 3} capacitors deposited by sol–gel dip coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Cetinkaya, Ali Osman, E-mail: cetinkayaaliosman@gmail.com [Physics Department, Abant Izzet Baysal University, 14280 Bolu (Turkey); Center for Nuclear Radiation Detector Research and Applications, 14280 Bolu (Turkey); Kaya, Senol; Aktag, Aliekber [Physics Department, Abant Izzet Baysal University, 14280 Bolu (Turkey); Center for Nuclear Radiation Detector Research and Applications, 14280 Bolu (Turkey); Budak, Erhan [Chemistry Department, Abant Izzet Baysal University, 14280 Bolu (Turkey); Yilmaz, Ercan [Physics Department, Abant Izzet Baysal University, 14280 Bolu (Turkey); Center for Nuclear Radiation Detector Research and Applications, 14280 Bolu (Turkey)

    2015-09-01

    Bismuth ferrite (BiFeO{sub 3}) thin films were deposited by sol–gel dip coating (SGDC) technique on Si-P(100) and glass substrates to investigate the structural and electrical characteristics. The aluminum (Al) metal contacts were formed on the samples deposited on the Si-P(100) to fabricate metal-oxide-semiconductor (MOS) capacitors. The fabricated MOS structures were characterized electrically by capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. The structural characterizations were performed by X-ray diffraction technique and scanning electron microscopy. The compositions of the films were investigated by energy-dispersive X-ray spectroscopy. The results exhibit that pure rhombohedral perovskite phase films were fabricated without any elemental contamination. Average grain sizes of the BiFeO{sub 3} deposited on silicon and glass wafers were found to be about 34,50 and 30,00 nm, respectively. In addition, while the thin films deposited on glass substrate exhibit porous surface, those deposited on Si-P(100) wafers exhibit dense microstructure with a homogenous surface. Moreover, the C–V and G/ω–V characteristics are sensitive to applied voltage frequency due to frequency dependent charges (N{sub ss}) and series resistance (R{sub s}). The peak values of R{sub s} have been decreased from 2,6 kΩ to 40 Ω, while N{sub ss} is varied from 6,57 × 10{sup 12} to 3,68 × 10{sup 12} eV{sup −1} cm{sup −2} with increasing in frequency. Consequently, pure phase polycrystalline BiFeO{sub 3} thin films were fabricated successfully by SGDC technique and BiFeO{sub 3} dielectric layer exhibits stable insulation characteristics. - Highlights: • Bismuth ferrite thin films were deposited onto silicon and glass substrates by sol–gel. • Structural and electrical properties of fabricated films have been investigated. • Pure rhombohedral perovskite phase films without any contamination were deposited. • Series resistance and interface

  18. Optoelectronic properties of cadmium sulfide thin films deposited by thermal evaporation technique

    International Nuclear Information System (INIS)

    Ali, N.; Iqbal, M.A.; Hussain, S.T.; Waris, M.; Munair, S.A.

    2011-01-01

    The substrate temperature in depositions of thin films plays a vital role in the characteristics of deposited films. We studied few characteristics of cadmium sulphide thin film deposited at different temperature (150 deg. C- 300 deg. C) on corning 7059 glass substrate. We measured transmittance, absorbance, band gap and reflectance via UV spectroscopy. It was found that the transmittance for 300 nm to 1100 nm was greater than 80%. The resistivity and mobility was calculated by Vander Pauw method which were 10-80 cm and 2-60 cm/sup 2/V/sup -1/S/sup -1/ respectively. The thermoelectric properties of the film were measured by hot and cold probe method which shows the N-type nature of the film. (author)

  19. Synthesis of dense nano cobalt-hydroxyapatite by modified electroless deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mohd Zaheruddin, K., E-mail: zaheruddin@unimap.edu.my; Rahmat, A., E-mail: azmirahmat@unimap.edu.my; Shamsul, J. B., E-mail: sbaharin@unimap.edu.my; Mohd Nazree, B. D., E-mail: nazree@unimap.edu.my; Aimi Noorliyana, H., E-mail: aimiliyana@unimap.edu.my [School of Materials Engineering, Universiti Malaysia Perlis, Kompleks Pusat Pengajian Jejawi Universiti Malaysia Perlis, Taman Muhibbah, Jejawi 02600 Arau Perlis (Malaysia)

    2016-07-19

    Cobalt-hydroxyapatite (Co-HA) composites was successfully prepared by simple electroless deposition process of Co on the surface of hydroxyapatite (HA) particles. Co deposition was carried out in an alkaline bath with sodium hypophosphite as a reducing agent. The electroless process was carried out without sensitization and activation steps. The deposition of Co onto HA was characterized by scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). The Co-HA composite powder was compacted and sintered at 1250°C. The Co particles were homogeneously dispersed in the HA matrix after sintering and the mechanical properties of composites was enhanced to 100 % with 3 % wt Co and gradually decreased at higher Co content.

  20. CVD growth of large-area and high-quality HfS2 nanoforest on diverse substrates

    Science.gov (United States)

    Zheng, Binjie; Wang, Zegao; Qi, Fei; Wang, Xinqiang; Yu, Bo; Zhang, Wanli; Chen, Yuanfu

    2018-03-01

    Two-dimensional layered transition metal dichalcogenides (TMDs) have attracted burgeoning attention due to their various properties and wide potential applications. As a new TMD, hafnium disulfide (HfS2) is theoretically predicted to have better electrical performance than widely studied MoS2. The experimental researches also confirmed the extraordinary feature in electronics and optoelectronics. However, the maximal device performance may not be achieved due to its own limitation of planar structure and challenge of transfer without contamination. Here, through the chemical vapor deposition (CVD) technique, inch-size HfS2 nanoforest has been directly grown on diverse objective substrates covering insulating, semiconducting and conducting substrates. This direct CVD growth without conventional transfer process avoids contamination and degradation in quality, suggesting its promising and wide applications in high-quality and multifarious devices. It is noted that all the HfS2 nanoforests grown on diverse substrates are constructed with vertically aligned few-layered HfS2 nanosheets with high crystalline quality and edge orientation. Moreover, due to its unique structure, the HfS2 nanoforest owns abundant exposed edge sites and large active surface area, which is essential to apply in high-performance catalyst, sensor, and energy storage or field emitter.

  1. Electrochemical performances of proton-conducting SOFC with La-Sr-Fe-O cathode fabricated by electrophoretic deposition techniques

    International Nuclear Information System (INIS)

    Asamoto, Makiko; Miyake, Shinji; Yonei, Yuka; Yamaura, Hiroyuki; Yahiro, Hidenori

    2009-01-01

    The electrochemical performances of Proton-conducting SOFC with La 0.7 Sr 0.3 FeO 3 (LSF) cathode fabricated by the electrophoretic deposition (EPD) technique were investigated. The EPD technique provided the uniform layer of LSF cathode with constant thickness and can easily control the thickness by changing an applied voltage. The power density of the SOFC cell was dependent on the thickness of LSF cathode. The activation energy was measured to elucidate the rate-determining step for LSF cathode reaction. (author)

  2. Characterization of nanostructured photosensitive cadmium sulphide thin films grown by SILAR deposition technique

    International Nuclear Information System (INIS)

    Ubale, A.U.; Bargal, A.N.

    2010-01-01

    This paper reports the preparation of photosensitive nanostructured CdS thin films by successive ionic layer adsorption and reaction (SILAR) method at room temperature. To obtain good quality CdS thin films, preparative conditions such as concentration of cationic and anionic precursors, adsorption and rinsing time durations etc. are optimized. The structural, optical and electrical characterizations of the as-deposited and annealed CdS thin films were carried out using X-ray diffraction, scanning electron microscopy, optical absorption and electrical resistivity methods. The photoconductivity studies showed that the annealed films are more than that photosensitive. The TEP measurement shows that deposited films are of n-type. (author)

  3. Polymer Adsorption on Graphite and CVD Graphene Surfaces Studied by Surface-Specific Vibrational Spectroscopy.

    Science.gov (United States)

    Su, Yudan; Han, Hui-Ling; Cai, Qun; Wu, Qiong; Xie, Mingxiu; Chen, Daoyong; Geng, Baisong; Zhang, Yuanbo; Wang, Feng; Shen, Y R; Tian, Chuanshan

    2015-10-14

    Sum-frequency vibrational spectroscopy was employed to probe polymer contaminants on chemical vapor deposition (CVD) graphene and to study alkane and polyethylene (PE) adsorption on graphite. In comparing the spectra from the two surfaces, it was found that the contaminants on CVD graphene must be long-chain alkane or PE-like molecules. PE adsorption from solution on the honeycomb surface results in a self-assembled ordered monolayer with the C-C skeleton plane perpendicular to the surface and an adsorption free energy of ∼42 kJ/mol for PE(H(CH2CH2)nH) with n ≈ 60. Such large adsorption energy is responsible for the easy contamination of CVD graphene by impurity in the polymer during standard transfer processes. Contamination can be minimized with the use of purified polymers free of PE-like impurities.

  4. CVD diamond based soft X-ray detector with fast response

    International Nuclear Information System (INIS)

    Li Fang; Hou Lifei; Su Chunxiao; Yang Guohong; Liu Shenye

    2010-01-01

    A soft X-ray detector has been made with high quality chemical vapor deposited (CVD) diamond and the electrical structure of micro-strip. Through the measurement of response time on a laser with the pulse width of 10 ps, the full width at half maximum of the data got in the oscilloscope was 115 ps. The rise time of the CVD diamond detector was calculated to be 49 ps. In the experiment on the laser prototype facility, the signal got by the CVD diamond detector was compared with that got by a soft X-ray spectrometer. Both signals coincided well. The detector is proved to be a kind of reliable soft X-ray detector with fast response and high signal-to-noise ratio. (authors)

  5. A Hybrid Information Mining Approach for Knowledge Discovery in Cardiovascular Disease (CVD

    Directory of Open Access Journals (Sweden)

    Stefania Pasanisi

    2018-04-01

    Full Text Available The healthcare ambit is usually perceived as “information rich” yet “knowledge poor”. Nowadays, an unprecedented effort is underway to increase the use of business intelligence techniques to solve this problem. Heart disease (HD is a major cause of mortality in modern society. This paper analyzes the risk factors that have been identified in cardiovascular disease (CVD surveillance systems. The Heart Care study identifies attributes related to CVD risk (gender, age, smoking habit, etc. and other dependent variables that include a specific form of CVD (diabetes, hypertension, cardiac disease, etc.. In this paper, we combine Clustering, Association Rules, and Neural Networks for the assessment of heart-event-related risk factors, targeting the reduction of CVD risk. With the use of the K-means algorithm, significant groups of patients are found. Then, the Apriori algorithm is applied in order to understand the kinds of relations between the attributes within the dataset, first looking within the whole dataset and then refining the results through the subsets defined by the clusters. Finally, both results allow us to better define patients’ characteristics in order to make predictions about CVD risk with a Multilayer Perceptron Neural Network. The results obtained with the hybrid information mining approach indicate that it is an effective strategy for knowledge discovery concerning chronic diseases, particularly for CVD risk.

  6. Thermodynamic study of CVD-ZrO{sub 2} phase diagrams

    Energy Technology Data Exchange (ETDEWEB)

    Torres-Huerta, A.M., E-mail: atorresh@ipn.m [Research Center for Applied Science and Advanced Technology, Altamira-IPN, Altamira C.P.89600 Tamaulipas (Mexico); Vargas-Garcia, J.R. [Dept of Metallurgical Eng., ESIQIE-IPN, Mexico 07300 D.F. (Mexico); Dominguez-Crespo, M.A. [Research Center for Applied Science and Advanced Technology, Altamira-IPN, Altamira C.P.89600 Tamaulipas (Mexico); Romero-Serrano, J.A. [Dept of Metallurgical Eng., ESIQIE-IPN, Mexico 07300 D.F. (Mexico)

    2009-08-26

    Chemical vapor deposition (CVD) of zirconium oxide (ZrO{sub 2}) from zirconium acetylacetonate Zr(acac){sub 4} has been thermodynamically investigated using the Gibbs' free energy minimization method and the FACTSAGE program. Thermodynamic data Cp{sup o}, DELTAH{sup o} and S{sup o} for Zr(acac){sub 4} have been estimated using the Meghreblian-Crawford-Parr and Benson methods because they are not available in the literature. The effect of deposition parameters, such as temperature and pressure, on the extension of the region where pure ZrO{sub 2} can be deposited was analyzed. The results are presented as calculated CVD stability diagrams. The phase diagrams showed two zones, one of them corresponds to pure monoclinic phase of ZrO{sub 2} and the other one corresponds to a mix of monoclinic phase of ZrO{sub 2} and graphite carbon.

  7. Friction Properties of Polished Cvd Diamond Films Sliding against Different Metals

    Science.gov (United States)

    Lin, Zichao; Sun, Fanghong; Shen, Bin

    2016-11-01

    Owing to their excellent mechanical and tribological properties, like the well-known extreme hardness, low coefficient of friction and high chemical inertness, chemical vapor deposition (CVD) diamond films have found applications as a hard coating for drawing dies. The surface roughness of the diamond films is one of the most important attributes to the drawing dies. In this paper, the effects of different surface roughnesses on the friction properties of diamond films have been experimentally studied. Diamond films were fabricated using hot filament CVD. The WC-Co (Co 6wt.%) drawing dies were used as substrates. A gas mixture of acetone and hydrogen gas was used as the feedstock gas. The CVD diamond films were polished using mechanical polishing. Polished diamond films with three different surface roughnesses, as well as the unpolished diamond film, were fabricated in order to study the tribological performance between the CVD diamond films and different metals with oil lubrication. The unpolished and polished CVD diamond films are characterized with scanning electron microscope (SEM), atomic force microscope (AFM), surface profilometer, Raman spectrum and X-ray diffraction (XRD). The friction examinations were carried out by using a ball-on-plate type reciprocating friction tester. Low carbide steel, stainless steel, copper and aluminum materials were used as counterpart balls. Based on this study, the results presented the friction coefficients between the polished CVD films and different metals. The friction tests demonstrate that the smooth surface finish of CVD diamond films is beneficial for reducing their friction coefficients. The diamond films exhibit low friction coefficients when slid against the stainless steel balls and low carbide steel ball, lower than that slid against copper ball and aluminum ball, attributed to the higher ductility of copper and aluminum causing larger amount of wear debris adhering to the sliding interface and higher adhesive

  8. CVD-graphene growth on different polycrystalline transition metals

    Directory of Open Access Journals (Sweden)

    M. P. Lavin-Lopez

    2017-01-01

    Full Text Available The chemical vapor deposition (CVD graphene growth on two polycrystalline transition metals (Ni and Cu was investigated in detail using Raman spectroscopy and optical microscopy as a way to synthesize graphene of the highest quality (i.e. uniform growth of monolayer graphene, which is considered a key issue for electronic devices. Key CVD process parameters (reaction temperature, CH4/H2flow rate ratio, total flow of gases (CH4+H2, reaction time were optimized for both metals in order to obtain the highest graphene uniformity and quality. The conclusions previously reported in literature about the performance of low and high carbon solubility metals in the synthesis of graphene and their associated reaction mechanisms, i.e. surface depositionand precipitation on cooling, respectively, was not corroborated by the results obtained in this work. Under the optimal reaction conditions, a large percentage of monolayer graphene was obtained over the Ni foil since the carbon saturation was not complete, allowing carbon atoms to be stored in the bulk metal, which could diffuse forming high quality monolayer graphene at the surface. However, under the optimal reaction conditions, the formation of a non-uniform mixture of few layers and multilayer graphene on the Cu foil was related to the presence of an excess of active carbon atoms on the Cu surface.

  9. Oxide Dispersion Strengthened Iron Aluminide by CVD Coated Powders

    Energy Technology Data Exchange (ETDEWEB)

    Asit Biswas Andrew J. Sherman

    2006-09-25

    This I &I Category2 program developed chemical vapor deposition (CVD) of iron, aluminum and aluminum oxide coated iron powders and the availability of high temperature oxidation, corrosion and erosion resistant coating for future power generation equipment and can be used for retrofitting existing fossil-fired power plant equipment. This coating will provide enhanced life and performance of Coal-Fired Boilers components such as fire side corrosion on the outer diameter (OD) of the water wall and superheater tubing as well as on the inner diameter (ID) and OD of larger diameter headers. The program also developed a manufacturing route for readily available thermal spray powders for iron aluminide coating and fabrication of net shape component by powder metallurgy route using this CVD coated powders. This coating can also be applid on jet engine compressor blade and housing, industrial heat treating furnace fixtures, magnetic electronic parts, heating element, piping and tubing for fossil energy application and automotive application, chemical processing equipment , heat exchanger, and structural member of aircraft. The program also resulted in developing a new fabrication route of thermal spray coating and oxide dispersion strengthened (ODS) iron aluminide composites enabling more precise control over material microstructures.

  10. A study of the thermoluminescent properties of CVD diamond detectors

    International Nuclear Information System (INIS)

    Marczewska, B.; Bilski, P.; Olko, P.; Rebisz, M.; Nesladek, M.; Waligorski, M.P.R.

    2002-01-01

    A batch of 20 diamond detectors obtained by the chemical vapour deposition (CVD) method at the Institute for Materials Research at the Limburg University, Belgium, was investigated with respect to their thermoluminescent (TL) properties. The investigated detectors demonstrate TL sensitivity similar to that of the standard LiF:Mg, Ti (MTS) thermoluminescent detectors, lack of fading after two weeks from irradiation and apparent linearity of dose response. In spite of the persistent fluctuation of individual detector sensitivity observed in this batch, a new annealing procedure improved the stability of the TL signal. It has been concluded that 1 h annealing at 350 C assures the highest reproducibility for this set of detectors. A 30% discrepancy of the value of the TL signal between individual detectors from the batch may be caused by non-uniform distribution of dopants in the volume of the CVD diamond. A prototype of a planar TL reader equipped with a CCD camera was employed in this investigation. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  11. Thermoluminescence in CVD diamond films: application to actinometric dosimetry

    International Nuclear Information System (INIS)

    Barboza-Flores, M.; Melendrez, R.; Chernov, V.; Castaneda, B.; Pedroza-Montero, M.; Gan, B.; Ahn, J.; Zhang, Q.; Yoon, S.F.

    2002-01-01

    Diamond is considered a tissue-equivalent material since its atomic number (Z=6) is close to the effective atomic number of biological tissue (Z=7.42). Such a situation makes it suitable for radiation detection purposes in medical applications. In the present work the analysis is reported of the thermoluminescence (TL) and dosimetric features of chemically vapour deposited (CVD) diamond film samples subjected to ultraviolet (UV) irradiation in the actinometric region. The TL glow curve shows peaks at 120, 220, 320 and 370 deg. C. The 120 and 370 deg. C peaks are too weak and the first one fades away in a few seconds after exposure. The overall room temperature fading shows a 50% TL decay 30 min after exposure. The 320 deg. C glow peak is considered to be the most adequate for dosimetric applications due to its low fading and linear TL behaviour as a function of UV dose in the 180-260 nm range. The TL excitation spectrum presents a broad band with at least two overlapped components around 205 and 220 nm. The results indicate that the TL behaviour of CVD diamond film can be a good alternative to the currently available dosemeter and detector in the actinometric region as well as in clinical and medical applications. (author)

  12. VOx effectively doping CVD-graphene for transparent conductive films

    Science.gov (United States)

    Ji, Qinghua; Shi, Liangjing; Zhang, Qinghong; Wang, Weiqi; Zheng, Huifeng; Zhang, Yuzhi; Liu, Yangqiao; Sun, Jing

    2016-11-01

    Chemical vapor deposition(CVD)-synthesized graphene is potentially an alternative for tin-doped indium oxide (ITO) transparent conductive films (TCFs), however its sheet resistance is still too high to meet many demands. Vanadium oxide has been widely applied as smart window materials, however, no study has been reported to use it as dopant to improve the conductivity of graphene TCFs. In this study, we firstly reported that VOx doping can effectively lower the sheet resistance of CVD-graphene films while keeping its good optical properties, whose transmittance is as high as 86-90%. The optimized VOx-doped graphene exhibits a sheet resistance as low as 176 Ω/□, which decreases by 56% compared to the undoped graphene films. The doping process is convenient, stable, economical and easy to operate. What is more, VOx can effectively increase the work function(WF) of the film, making it more appropriate for use in solar cells. The evolution of the VOx species annealed at different temperatures below 400 °C has been detailed studied for the first time, based on which the doping mechanism is proposed. The prepared VOx doped graphene is expected to be a promising candidate for transparent conductive film purposes.

  13. CVD diamond pixel detectors for LHC experiments

    CERN Document Server

    Wedenig, R; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Runólfsson, O; Russ, J; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Vittone, E; Wagner, A; Walsh, A M; Weilhammer, Peter; White, C; Zeuner, W; Ziock, H J; Zöller, M

    1999-01-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described. (9 refs).

  14. CVD diamond pixel detectors for LHC experiments

    Energy Technology Data Exchange (ETDEWEB)

    Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J.C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N

    1999-08-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

  15. CVD diamond pixel detectors for LHC experiments

    International Nuclear Information System (INIS)

    Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J.C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N.

    1999-01-01

    This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described

  16. Turbostratic stacked CVD graphene for high-performance devices

    Science.gov (United States)

    Uemura, Kohei; Ikuta, Takashi; Maehashi, Kenzo

    2018-03-01

    We have fabricated turbostratic stacked graphene with high-transport properties by the repeated transfer of CVD monolayer graphene. The turbostratic stacked CVD graphene exhibited higher carrier mobility and conductivity than CVD monolayer graphene. The electron mobility for the three-layer turbostratic stacked CVD graphene surpassed 10,000 cm2 V-1 s-1 at room temperature, which is five times greater than that for CVD monolayer graphene. The results indicate that the high performance is derived from maintenance of the linear band dispersion, suppression of the carrier scattering, and parallel conduction. Therefore, turbostratic stacked CVD graphene is a superior material for high-performance devices.

  17. Functional Micrococcus lysodeikticus layers deposited by laser technique for the optical sensing of lysozyme.

    Science.gov (United States)

    Dinca, Valentina; Zaharie-Butucel, Diana; Stanica, Luciana; Brajnicov, Simona; Marascu, Valentina; Bonciu, Anca; Cristocea, Andra; Gaman, Laura; Gheorghiu, Mihaela; Astilean, Simion; Vasilescu, Alina

    2018-02-01

    Whole cell optical biosensors, made by immobilizing whole algal, bacterial or mammalian cells on various supports have found applications in several fields, from ecology and ecotoxicity testing to biopharmaceutical production or medical diagnostics. We hereby report the deposition of functional bacterial layers of Micrococcus lysodeikticus (ML) via Matrix-Assisted Pulsed Laser Evaporation (MAPLE) on poly(diallyldimethylamonium) (PDDA)-coated-glass slides and their application as an optical biosensor for the detection of lysozyme in serum. Lysozyme is an enzyme upregulated in inflammatory diseases and ML is an enzymatic substrate for this enzyme. The MAPLE-deposited bacterial interfaces were characterised by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Fourier-Transformed Infrared Spectroscopy (FTIR), Raman and optical microscopy and were compared with control interfaces deposited via layer-by-layer on the same substrate. After MAPLE deposition and coating with graphene oxide (GO), ML-modified interfaces retained their functionality and sensitivity to lysozyme's lytic action. The optical biosensor detected lysozyme in undiluted serum in the clinically relevant range up to 10μgmL -1 , in a fast and simple manner. Copyright © 2017 Elsevier B.V. All rights reserved.

  18. Fabrication and characterization of In2S3 thin films deposited by thermal evaporation technique

    International Nuclear Information System (INIS)

    Timoumi, A.; Bouzouita, H.; Kanzari, M.; Rezig, B.

    2005-01-01

    Indium sulphide, In 2 S 3 , thin films present an alternative to conventional CdS films as buffer layer for CIS-based thin film solar cells. The objective is to eliminate toxic cadmium for environmental reasons. Indium sulphide is synthesized and deposited by single source vacuum thermal evaporation method on glass substrates. The films are analyzed by X-ray diffraction (XRD) and spectrophotometric measurements. They have a good crystallinity, homogeneity and adhesion. The X-ray diffraction analysis confirmed the initial amorphous nature of the deposited InS film and phase transition into crystalline In 2 S 3 formed upon annealing at free air for 250 deg. C substrate temperature for 2 h. The optical constants of the deposited films were obtained from the analysis of the experimental recorded transmission and reflectance spectral data over the wavelength range of 300-1800 nm. We note that the films annealed at 250 deg. C for 2 h show a good homogeneity with 80% transmission. An analysis of the optical absorption data of the deposited films revealed an optical direct band gap energy in the range of 2.0-2.2 eV

  19. Fabrication of Antireflection Nanodiamond Particle Film by the Spin Coating Deposition Technique

    Directory of Open Access Journals (Sweden)

    Chii-Ruey Lin

    2014-01-01

    Full Text Available Diamond-based antireflective (AR coatings were fabricated using a spin coating of diamond suspension at room temperature as nucleation enhancement procedure and microwave plasma enhanced chemical vapour deposition. Various working pressures were used to investigate their effect on the optical characterization of the as-deposited diamond films. Scanning electron microscopy (SEM and atomic forced microscopy (AFM were employed to analyze the surface properties of the diamond films. Raman spectra and transmission electron microscopy (TEM also were used for analysis of the microstructure of the films. The results showed that working pressure had a significant effect on thickness, surface roughness, and wettability of the as-deposited diamond films. Deposited under 35 Torr or working pressure, the film possessed a low surface roughness of 13.8 nm and fine diamond grain sizes of 35 nm. Reflectance measurements of the films also were carried out using UV-Vis spectrometer and revealed a low reflectance value of the diamond films. The achievement demonstrated feasibility of the proposed spin-coating procedure for large scale production and thus opens up a prospect application of diamond film as an AR coating in industrial optoelectronic device.

  20. Diamond-coated three-dimensional GaN micromembranes: effect of nucleation and deposition techniques

    Czech Academy of Sciences Publication Activity Database

    Ižák, Tibor; Vanko, G.; Babchenko, Oleg; Potocký, Štěpán; Marton, M.; Vojs, M.; Choleva, P.; Kromka, Alexander

    2015-01-01

    Roč. 252, č. 11 (2015), s. 2585-2590 ISSN 0370-1972 R&D Projects: GA ČR(CZ) GP14-16549P Institutional support: RVO:68378271 Keywords : diamond film * GaN micromembranes * microwave chemical vapour deposition * polymer-based nucleation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.522, year: 2015

  1. Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures

    Science.gov (United States)

    Gurram, M.; Omar, S.; Zihlmann, S.; Makk, P.; Li, Q. C.; Zhang, Y. F.; Schönenberger, C.; van Wees, B. J.

    2018-01-01

    We study room-temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapor deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO2 substrate-based graphene devices, and we obtain a similar order of magnitude of spin relaxation rates for both the Elliott-Yafet and D'Yakonov-Perel' mechanisms. The behavior of ferromagnet/two-layer-CVD-hBN/graphene/hBN contacts ranges from transparent to tunneling due to inhomogeneities in the CVD-hBN barriers. Surprisingly, we find both positive and negative spin polarizations for high-resistance two-layer-CVD-hBN barrier contacts with respect to the low-resistance contacts. Furthermore, we find that the differential spin-injection polarization of the high-resistance contacts can be modulated by dc bias from -0.3 to +0.3 V with no change in its sign, while its magnitude increases at higher negative bias. These features point to the distinctive spin-injection nature of the two-layer-CVD-hBN compared to the bilayer-exfoliated-hBN tunnel barriers.

  2. Deposition and modification of tantalum carbide coatings on graphite by laser interactions

    International Nuclear Information System (INIS)

    Veligdan, J.; Branch, D.; Vanier, P.E.; Barletta, R.E.

    1992-01-01

    Graphite surfaces can be hardened and protected from erosion by hydrogen at high temperatures by refractory metal carbide coatings, which are usually prepared by chemical vapor deposition (CVD) or chemical vapor reaction (CVR) methods. These techniques rely on heating the substrate to a temperature where a volatile metal halide decomposes and reacts with either a hydrocarbon gas or with carbon from the substrate. For CVR techniques, deposition temperatures must be in excess of 2000 degrees C in order to achieve favorable deposition kinetics. In an effort to lower the bulk substrate deposition temperature, the use of laser interactions with both the substrate and the metal halide deposition gas has been employed. Initial testing, involved the use of a CO 2 laser to heat the surface of a graphite substrate and a KrF excimer laser to accomplish a photodecomposition of TaCl 5 gas near the substrate. Results of preliminary experiments using these techniques are described

  3. A comparative study of two advanced spraying techniques for the deposition of biologically active enzyme coatings onto bone-substituting implants

    International Nuclear Information System (INIS)

    Jonge, Lise T. de; Ju, J.; Leeuwenburgh, S.C.G.; Yamagata, Y.; Higuchi, T.; Wolke, J.G.C.; Inoue, K.; Jansen, J.A.

    2010-01-01

    Surface modification of implant materials with biomolecule coatings is of high importance to improve implant fixation in bone tissue. In the current study, we present two techniques for the deposition of biologically active enzyme coatings onto implant materials. The well-established thin film ElectroSpray Deposition (ESD) technique was compared with the SAW-ED technique that combines high-frequency Surface Acoustic Wave atomization with Electrostatic Deposition. By immobilizing the enzyme alkaline phosphatase (ALP) onto implant surfaces, the influence of both SAW-ED and ESD deposition parameters on ALP deposition efficiency and ALP biological activity was investigated. ALP coatings with preserved enzyme activity were deposited by means of both the SAW-ED and ESD technique. The advantages of SAW-ED over ESD include the possibility to spray highly conductive protein solutions, and the 60-times faster deposition rate. Furthermore, significantly higher deposition efficiencies were observed for the SAW-ED technique compared to ESD. Generally, it was shown that protein inactivation is highly dependent on both droplet dehydration and the applied electrical field strength. The current study shows that SAW-ED is a versatile and flexible technique for the fabrication of functionally active biomolecule coatings.

  4. Characterization of hydroxyapatite coating by pulse laser deposition technique on stainless steel 316 L by varying laser energy

    International Nuclear Information System (INIS)

    Khandelwal, Himanshu; Singh, Gurbhinder; Agrawal, Khelendra; Prakash, Satya; Agarwal, R.D.

    2013-01-01

    Highlights: ► Hydroxyapatite coating was successfully deposited on stainless steel substrate by pulse laser deposition at different energy levels (i.e. 300 mJ and 500 mJ, respectively). ► Variation in laser energy affects the surface characteristic of hydroxyapatite coating (particle size, surface roughness, uniformity, Ca/P ratio). ► Laser energy between 300 mJ and 500 mJ is the optimal choice for obtaining ideal Ca/P ratio. - Abstract: Hydroxyapatite is an attractive biomaterial mainly used in bone and tooth implants because it closely resembles human tooth and bone mineral and has proven to be biologically compatible with these tissues. In spite of this advantage of hydroxyapatite it has also certain limitation like inferior mechanical properties which do not make it suitable for long term load bearing applications; hence a lot of research is going on in the development of hydroxyapatite coating over various metallic implants. These metallic implants have good biocompatibility and mechanical properties. The aim of the present work is to deposit hydroxyapatite coating over stainless steel grade 316 L by pulse laser deposition technique by varying laser energy. To know the effect of this variation, the coatings were than characterized in detail by X-ray diffraction, finite emission-scanning electron microscope, atomic force microscope and energy dispersive X-ray spectroscopy.

  5. Ultrashort pulse laser deposition of thin films

    Science.gov (United States)

    Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

    2002-01-01

    Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

  6. Higher lung deposition with Respimat® Soft Mist™ Inhaler than HFA-MDI in COPD patients with poor technique

    Directory of Open Access Journals (Sweden)

    Peter Brand

    2008-08-01

    Full Text Available Peter Brand1, Bettina Hederer2, George Austen3, Helen Dewberry3, Thomas Meyer41RWTH, Aachen, Germany; 2Boehringer Ingelheim, Ingelheim, Germany; 3Boehringer Ingelheim, Bracknell, UK; 4Inamed Research, Gauting, GermanyAbstract: Aerosols delivered by Respimat® Soft Mist™ Inhaler (SMI are slower-moving and longer-lasting than those from pressurized metered-dose inhalers (pMDIs, improving the efficiency of pulmonary drug delivery to patients. In this four-way cross-over study, adults with chronic obstructive pulmonary disease (COPD and with poor pMDI technique received radiolabelled Berodual® (fenoterol hydrobromide 50 µg/ipratropium bromide 20 µg via Respimat® SMI or hydrofluoroalkane (HFA-MDI (randomized order on test days 1 and 2, with no inhaler technique training. The procedure was repeated on test days 3 and 4 after training. Deposition was measured by gamma scintigraphy. All 13 patients entered (9 males, mean age 62 years; FEV1 46% of predicted inhaled too fast at screening (peak inspiratory flow rate [IF]: 69–161 L/min. Whole lung deposition was higher with Respimat® SMI than with pMDI for untrained (37% of delivered dose vs 21% of metered dose and trained patients (53% of delivered vs 21% of metered dose (pSign-Test = 0.15; pANOVA< 0.05. Training also improved inhalation profiles (slower average and peak IF as well as longer breath-hold time. Drug delivery to the lungs with Respimat® SMI is more efficient than with pMDI, even with poor inhaler technique. Teaching patients to hold their breath as well as to inhale slowly and deeply increased further lung deposition using Respimat® SMI.Keywords: chronic obstructive pulmonary disease, drug delivery, inhalation, metered-dose inhaler, poor inhalation technique, training

  7. Identification of sources of tar balls deposited along the Goa coast, India, using fingerprinting techniques

    Digital Repository Service at National Institute of Oceanography (India)

    Suneel, V.; Vethamony, P.; Zakaria, M.P.; Naik, B.G.; Prasad, K.V.

    . Christensen et al (2007) reviewed the practical aspects of chemometrics for oil spill fingerprinting and provided a basis for the use of chemometric 3    methods in tiered oil spill fingerprinting. Biomarker compounds such as isoprenoid alkanes, hopanes... deposited along the Malaysian beaches. Low molecular weight/high molecular weight ratios (L/H) of both alkanes and PAHs together are useful in categorizing the weathering effects of tar balls (Chandru et al., 2008). However, in cases...

  8. HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Aji, A. S., E-mail: aji.ravazes70@gmail.com; Darma, Y., E-mail: aji.ravazes70@gmail.com [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

    2014-03-24

    Surface modifications of Si (111) substrate by HF solution for thin film carbon deposition have been systematically studied. Thin film carbon on Si (111) has been deposited using DC Unbalanced Magnetron Sputtering with carbon pellet doped by 5% Fe as the target. EDAX characterization confirmed that the carbon fraction on Si substrate much higher by dipping a clean Si substrate by HF solution before sputtering process in comparison with carbon fraction on Si substrate just after conventional RCA. Moreover, SEM and AFM images show the uniform thin film carbon on Si with HF treatment, in contrast to the Si without HF solution treatment. These experimental results suggest that HF treatment of Si surface provide Si-H bonds on top Si surface that useful to enhance the carbon deposition during sputtering process. Furthermore, we investigate the thermal stability of thin film carbon on Si by thermal annealing process up to 900 °C. Atomic arrangements during annealing process were characterized by Raman spectroscopy. Raman spectra indicate that thin film carbon on Si is remaining unchanged until 600 °C and carbon atoms start to diffuse toward Si substrate after annealing at 900 °C.

  9. Thick CrN/NbN multilayer coating deposited by cathodic arc technique

    Energy Technology Data Exchange (ETDEWEB)

    Araujo, Juliano Avelar; Tschiptschin, Andre Paulo; Souza, Roberto Martins, E-mail: antschip@usp.br [Universidade de Sao Paulo (USP), SP (Brazil); Lima, Nelson Batista de [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2017-01-15

    The production of tribological nanoscale multilayer CrN/NbN coatings up to 6 μm thick by Sputtering/HIPIMS has been reported in literature. However, high demanding applications, such as internal combustion engine parts, need thicker coatings (>30 μm). The production of such parts by sputtering would be economically restrictive due to low deposition rates. In this work, nanoscale multilayer CrN/NbN coatings were produced in a high-deposition rate, industrial-size, Cathodic Arc Physical Vapor Deposition (ARC-PVD) chamber, containing three cathodes in alternate positions (Cr/ Nb/Cr). Four 30 μm thick NbN/CrN multilayer coatings with different periodicities (20, 10, 7.5 and 4 nm) were produced. The coatings were characterized by X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). The multilayer coating system was composed of alternate cubic rock salt CrN and NbN layers, coherently strained due to lattice mismatch. The film grew with columnar morphology through the entire stratified structure. The periodicities adopted were maintained throughout the entire coating. The 20 nm periodicity coating showed separate NbN and CrN peaks in the XRD patterns, while for the lower periodicity (≤10nm) coatings, just one intermediate lattice (d-spacing) was detected. An almost linear increase of hardness with decreasing bilayer period indicates that interfacial effects can dominate the hardening mechanisms. (author)

  10. Deposition of waste kaolin in aluminum alloy by electrolytic plasma technique

    International Nuclear Information System (INIS)

    Palinkas, Fabiola Bergamasco da Silva Marcondes; Antunes, Maria Lucia Pereira; Cruz, Nilson Cristino; Rangel, Elidiane Cipriano; Souza, Jose Antonio da Silva

    2016-01-01

    Full text: Kaolin is a widely explored mineral for various industrial purposes and its processing generates up to 90% of waste, corresponding to 500 thousand tons annually. The Deposition of Kaolin residue on aluminum alloys by electrolytic plasma has objective of a valorization of the residue. It was evaluated the mineralogical composition by X-ray diffraction (XRD), using PANalytical diffractometer X'Pert Pro. The scanning electron microscopy (SEM) and the spectrometry of dispersive of energy (EDS) evaluated the morphology and elementary chemical composition by microscope scanning electron JEOL JSM-6010LA. The Infrared Spectroscopy (FTIR) has used a Spectrometer the Perkin-Elmer 1760X FT-IR with spectral range 4000-400 cm -1 . XRD results indicate peaks of kaolinite as the main constituent. The morphology of the particles correspond to pseudo-hexagonal lamellar crystals characteristic of kaolinite, analysis by EDS allows to identify the composition of the particles as Al and Si. The samples were deposited at concentrations of 5, 10 and 15 mg of the residue and each concentration were considered deposition times of 5, 10 and 15 minutes. Tests evaluate the films as the wettability, chemical composition, morphology, mechanical strength and corrosion resistance. Results indicate the presence of kaolinite, alumina and mullite in the obtained coatings. (author)

  11. Preparation, characterization and optical properties of Gadolinium doped ceria thin films by pulsed laser deposition technique

    International Nuclear Information System (INIS)

    Nagaraju, P.; Vijaya Kumar, Y.; Vishnuvardhan Reddy, C.; Ramana Reddy, M.V.; Phase, D.M; Raghavendra Reddy, V.

    2013-01-01

    The growth of Gadolinium doped ceria thin films with controlled surface structure for device quality applications presents a significant problem for experimental investigation. In the present study gadolinium doped cerium oxide thin films were prepared by pulsed laser deposition (PLD) and were studied for their surface structure evaluation in relation to the optimized operating conditions during the stage of film preparation. The deposition was made with gadolinium concentration of 10 mole% to ceria pellets. The films were deposited on quartz substrate in the presence of oxygen partial pressure of 1.5 x 10 -3 torr using KrF Excimer laser with laser energy 220 mJ at a substrate temperature 700℃. The effect of annealing temperature on 10 mole% GDC thin film was investigated. The film thickness was measured by using AMBIOS make XP-l stylus profiler. As prepared and annealed thin films were characterized for crystallinity, particle size and orientation by using G.I.XRD. The films were characterized using atomic force microscopy (AFM). The AFM results gave a consistent picture of the evolution of GDC film surface morphologies and microstructures in terms of surface roughness, grain distribution and mean grain size. The optical transmittance spectra was used to determine the optical constants such as optical band gap, refractive index, extinction coefficient of as prepared and annealed thin films. (author)

  12. Real-time kinetic modeling of YSZ thin film roughness deposited by e-beam evaporation technique

    International Nuclear Information System (INIS)

    Galdikas, A.; Cerapaite-Trusinskiene, R.; Laukaitis, G.; Dudonis, J.

    2008-01-01

    In the present study, the process of yttrium-stabilized zirconia (YSZ) thin films deposition on optical quartz (SiO 2 ) substrates using e-beam deposition technique controlling electron gun power is analyzed. It was found that electron gun power influences the non-monotonous kinetics of YSZ film surface roughness. The evolution of YSZ thin film surface roughness was analyzed by a kinetic model. The model is based on the rate equations and includes processes of surface diffusion of the adatoms and the clusters, nucleation, growth and coalescence of islands in the case of thin film growth in Volmer-Weber mode. The analysis of the experimental results done by modeling explains non-monotonous kinetics and dependence of the surface roughness on the electron gun power. A good quantitative agreement with experimental results is obtained taking into account the initial roughness of the substrate surface and the amount of the clusters in the flux of evaporated material.

  13. Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

    Directory of Open Access Journals (Sweden)

    Domenico Melisi

    2014-11-01

    Full Text Available In this paper, a spray technique is used to perform low temperature deposition of multi-wall carbon nanotubes on semi-insulating gallium arsenide in order to obtain photodectors. A dispersion of nanotube powder in non-polar 1,2-dichloroethane is used as starting material. The morphological properties of the deposited films has been analysed by means of electron microscopy, in scanning and transmission mode. Detectors with different layouts have been prepared and current–voltage characteristics have been recorded in the dark and under irradiation with light in the range from ultraviolet to near infrared. The device spectral efficiency obtained from the electrical characterization is finally reported and an improvement of the photodetector behavior due to the nanotubes is presented and discussed.

  14. Layer-by-layer deposition of superconducting Sr-Ca-Cu-O films by the spray pyrolysis technique

    International Nuclear Information System (INIS)

    Pawar, S.H.; Pawaskar, P.N.; Ubale, M.J.; Kulkarni, S.B.

    1995-01-01

    Layer-by-layer deposition of Sr-Ca-Cu-O films has been carried out using the spray pyrolysis technique. Reagent-grade nitrates of strontium, calcium and copper were used to prepare starting solutions for spray pyrolysis. A two-step procedure was used for every layer of the constituents in the sequence Sr-Cu-Ca-Cu-Sr: first, deposition onto silver substrate at 350 C, then firing at T≥450 C, both at atmospheric pressure. The films were 2-3 μm thick and showed adequate adhesion to the substrate. The films were then characterised by studying their electron micrographs, X-ray diffraction patterns and electrical resistivity. The films showed superconductivity below 104 K. ((orig.))

  15. Thermodynamic and experimental studies of the CVD of A-15 superconductors. I

    International Nuclear Information System (INIS)

    Madar, R.; Weiss, F.; Fruchart, R.; Bernard, C.

    1978-01-01

    This paper deals with the experimental and thermodynamic study of the chemical vapor deposition (CVD) synthesis of Nb 3 Ga layers on various metallic and insulating substrates using the coreduction of mixed halides by hydrogen. Thermodynamic equilibrium in the seven-component system Nb-Ga-H-Cl-Si-O-Ar has been calculated using the method of minimization of the system Gibbs free energy as a function of the variables directly available in the CVD system. The chosen variables were the chloride ratio, the reduction and dilution parameters and the temperature of the deposition zone. The equilibrium compositions were calculated for the two composition limits of the A-15 phase: NbGasub(0.15) and Nb 3 Ga. They are presented in the form of CVD phase diagrams. A CVD reactor has been set up and more than one hundred measurements have been made in order to check the validity of the equilibrium calculations. The comparisons between equilibrium and experimental results show a good agreement and lead to a better understanding of the chemistry and thermodynamics of the system. (Auth.)

  16. CVD of SiC and AlN using cyclic organometallic precursors

    Science.gov (United States)

    Interrante, L. V.; Larkin, D. J.; Amato, C.

    1992-01-01

    The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

  17. Noninvasive radioisotopic technique for detection of platelet deposition in mitral valve prostheses and quantitation of visceral microembolism in dogs

    International Nuclear Information System (INIS)

    Dewanjee, M.K.; Fuster, V.; Rao, S.A.; Forshaw, P.L.; Kaye, M.P.

    1983-01-01

    A noninvasive technique has been developed in the dog model for imaging, with a gamma camera, the platelet deposition on Bjoerk-Shiley mitral valve prostheses early postoperatively. At 25 hours after implantation of the prosthesis and 24 hours after intravenous administration of 400 to 500 microCi of platelets labeled with indium-111, the platelet deposition in the sewing ring and perivalvular cardiac tissue can be clearly delineated in a scintiphotograph. An in vitro technique was also developed for quantitation of visceral microemboli in brain, lungs, kidneys, and other tissues. Biodistribution of the labeled platelets was quantitated, and the tissue/blood radioactivity ratio was determined in 22 dogs in four groups: unoperated normal dogs, sham-operated dogs, prosthesis-implanted dogs, and prosthesis-implanted dogs treated with dipyridamole before and aspirin and dipyridamole immediately after operation. Fifteen to 20% of total platelets were consumed as a consequence of the surgical procedure. On quantitation, we found that platelet deposition on the components of the prostheses was significantly reduced in prosthesis-implanted animals treated with dipyridamole and aspirin when compared with prosthesis-implanted, untreated dogs. All prosthesis-implanted animals considered together had a twofold to fourfold increase in tissue/blood radioactivity ratio in comparison with unoperated and sham-operated animals, an indication that the viscera work as filters and trap platelet microemboli that are presumably produced in the region of the mitral valve prostheses. In the dog model, indium-111-labeled platelets thus provide a sensitive marker for noninvasive imaging of platelet deposition on mechanical mitral valve prostheses, in vitro evaluation of platelet microembolism in viscera, in vitro quantitation of surgical consumption of platelets, and evaluation of platelet-inhibitor drugs

  18. Modification of the morphology and optical properties of SnS films using glancing angle deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Sazideh, M.R., E-mail: Mohammadrezasazideh@gmail.com [Thin Film Lab., Faculty of Physics, Semnan University, Semnan, Islamic Republic of Iran (Iran, Islamic Republic of); Dizaji, H. Rezagholipour, E-mail: hrgholipour@semnan.ac.ir [Faculty of Physics, Semnan University, P.O. Box: 35195-363, Semnan, Islamic Republic of Iran (Iran, Islamic Republic of); Ehsani, M.H., E-mail: mhe_ehsani@yahoo.com [Faculty of Physics, Semnan University, P.O. Box: 35195-363, Semnan, Islamic Republic of Iran (Iran, Islamic Republic of); Moghadam, R. Zarei, E-mail: r.zarei1991@gmail.com [Thin Film Lab., Faculty of Physics, Semnan University, Semnan, Islamic Republic of Iran (Iran, Islamic Republic of)

    2017-05-31

    Highlights: • SnS thin films produced by thermal evaporation method using glancing angle deposition technique. • At α = 85° the layers show a considerable change in effective refractive index (Δn = 1.7) at near-IR spectral range. • FESEM images showed drastic changes in the structure and morphology of individual nano-plates as a function of incident angle deposition. - Abstract: Tin sulfide (SnS) films were prepared by thermal evaporation method using Glancing Angle Deposition (GLAD) technique at zero and different oblique incident flux angles (α = 45°, 55°, 65°, 75° and 85°). The physical properties of prepared films were systematically investigated. The X-ray diffraction analysis indicated that the film deposited at α = 0° formed as single phase with an orthorhombic structure. However, the layers became amorphous at α = 45°, 55°, 65°, 75° and 85°. Beside the appearance of amorphous feature in the film prepared at α higher than zero, Sn{sub 2}S{sub 3} phase was also observed. The top and cross-sectional field emission scanning electron microscope (FESEM) images of the samples showed noticeable changes in the structure and morphology of individual nano-plates as a function of incident angle. The band gap and refractive index values of the films were calculated by optical transmission measurements. The optical band-gap values were observed to increase with increasing the incident flux angle. This can be due to presence of Sn{sub 2}S{sub 3} phase observed in the samples produced at α values other than zero. The effective refractive index and porosity exhibit an opposite evolution as the incident angle α rises. At α = 85° the layers show a considerable change in effective refractive index (Δn = 1.7) at near-IR spectral range.

  19. Growth and characterization of yttrium iron garnet films on Si substrates by Chemical Solution Deposition (CSD) technique

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Xin; Chen, Ying; Wang, Genshui [Key Laboratory of Inorganic Function Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, University of Chinese Academy of Sciences, 1295 Dingxi Rd., Shanghai 200050 (China); Zhang, Yuanyuan [Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Rd., Shanghai 200241 (China); Ge, Jun [Key Laboratory of Inorganic Function Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, University of Chinese Academy of Sciences, 1295 Dingxi Rd., Shanghai 200050 (China); Tang, Xiaodong [Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, 500 Dongchuan Rd., Shanghai 200241 (China); Ponchel, Freddy; Rémiens, Denis [Institute of Electronics, Microelectronics and Nanotechnology (IEMN)–DOAE, UMR CNRS 8520, Université des Sciences et Technologies de Lille, 59652 Villeneuve d’Ascq Cedex (France); Dong, Xianlin, E-mail: xldong@mail.sic.ac.cn [Key Laboratory of Inorganic Function Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, University of Chinese Academy of Sciences, 1295 Dingxi Rd., Shanghai 200050 (China)

    2016-06-25

    Yttrium Iron Garnet (YIG) films were prepared on Si substrates by Chemical Solution Deposition (CSD) technique using acetic acid and deionized water as solvents. Well-crystallized and crack-free YIG films were obtained when annealed at 750 °C and 850 °C respectively, showing a low surface roughness of several nanometers. When annealed at 750 °C for 30 min, the saturated magnetization (Ms) and coercive field (Hc) of YIG films were 0.121 emu/mm{sup 3} (4πMs = 1.52 kGs) and 7 Oe respectively, which were similar to that prepared by PLD technique. The peak-to-peak linewidth of ferromagnetic resonance (FMR) was 220 Oe at 9.10 GHz. The results demonstrated that CSD was an excellent technique to prepare high quality yttrium iron garnet (YIG) films on silicon, which could provide a lower-cost way for large-scale production on Si-based integrated devices. - Highlights: • The preparation of YIG films by Chemical Solution Deposition are demonstrated. • Well-crystallized and crack-free YIG films can be obtained on Si substrate by CSD. • YIG films can be crystallized in 750 °C with good magnetic performances. • It's beneficial to large-scale production of YIG films on Si integrated devices.

  20. Investigation of Non-Vacuum Deposition Techniques in Fabrication of Chalcogenide-Based Solar Cell Absorbers

    KAUST Repository

    Alsaggaf, Ahmed

    2015-07-01

    The environmental challenges are increasing, and so is the need for renewable energy. For photovoltaic applications, thin film Cu(In,Ga)(S,Se)2 (CIGS) and CuIn(S,Se)2 (CIS) solar cells are attractive with conversion efficiencies of more than 20%. However, the high-efficiency cells are fabricated using vacuum technologies such as sputtering or thermal co-evaporation, which are very costly and unfeasible at industrial level. The fabrication involves the uses of highly toxic gases such as H2Se, adding complexity to the fabrication process. The work described here focused on non-vacuum deposition methods such as printing. Special attention has been given to printing designed in a moving Roll-to-Roll (R2R) fashion. The results show potential of such technology to replace the vacuum processes. Conversion efficiencies for such non-vacuum deposition of Cu(In,Ga)(S,Se)2 solar cells have exceeded 15% using hazardous chemicals such as hydrazine, which is unsuitable for industrial scale up. In an effort to simplify the process, non-toxic suspensions of Cu(In,Ga)S2 molecular-based precursors achieved efficiencies of ~7-15%. Attempts to further simplify the selenization step, deposition of CuIn(S,Se)2 particulate solutions without the Ga doping and non-toxic suspensions of Cu(In,Ga)Se2 quaternary precursors achieved efficiencies (~1-8%). The contribution of this research was to provide a new method to monitor printed structures through spectral-domain optical coherence tomography SD-OCT in a moving fashion simulating R2R process design at speeds up to 1.05 m/min. The research clarified morphological and compositional impacts of Nd:YAG laser heat-treatment on Cu(In,Ga)Se2 absorber layer to simplify the annealing step in non-vacuum environment compatible to R2R. Finally, the research further simplified development methods for CIGS solar cells based on suspensions of quaternary Cu(In,Ga)Se2 precursors and ternary CuInS2 precursors. The methods consisted of post deposition reactive

  1. CVD calibration light systems specifications. Rev. 0

    International Nuclear Information System (INIS)

    Mcllwain, A. K.

    1992-04-01

    Two prototype Cerenkov Viewing Device Calibration Light systems for the Mark IV CVD have been fabricated. They consist of a maintenance unit that will be used by the IAEA maintenance staff and a field unit that will be used by IAEA inspectors. More detailed information on the design of the calibration units can be obtained from the document SSP-39 and additional information on the Mark IV CVD can be obtained from the operating manual published as Canadian Safeguards Support Program document CSSP 6. The specifications refer to the prototype units which will be demonstrated to the IAEA in 1992 May. Based upon the feedback from the IAEA, the instruments will be changed in the final production models to provide devices that more closely satisfy the needs of the end users

  2. Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD

    International Nuclear Information System (INIS)

    Matsumoto, Y.; Godavarthi, S.; Ortega, M.; Sanchez, V.; Velumani, S.; Mallick, P.S.

    2011-01-01

    Different issues related to controlling size of nanocrystalline silicon (nc-Si) embedded in hydrogenated amorphous silicon oxide (a-SiO x :H) deposited by catalytic chemical vapor deposition (Cat-CVD) have been reported. Films were deposited using tantalum (Ta) and tungsten (W) filaments and it is observed that films deposited using tantalum filament resulted in good control on the properties. The parameters which can affect the size of nc-Si domains have been studied which include hydrogen flow rate, catalyst and substrate temperatures. The deposited samples are characterized by X-ray diffraction, HRTEM and micro-Raman spectroscopy, for determining the size of the deposited nc-Si. The crystallite formation starts for Ta-catalyst around the temperature of 1700 o C.

  3. Technique for large-scale structural mapping at uranium deposits i in non-metamorphosed sedimentary cover rocks

    International Nuclear Information System (INIS)

    Kochkin, B.T.

    1985-01-01

    The technique for large-scale construction (1:1000 - 1:10000), reflecting small amplitude fracture plicate structures, is given for uranium deposits in non-metamorphozed sedimentary cover rocks. Structure drill log sections, as well as a set of maps with the results of area analysis of hidden disturbances, structural analysis of iso-pachous lines and facies of platform mantle horizons serve as sour ce materials for structural mapplotting. The steps of structural map construction are considered: 1) structural carcass construction; 2) reconstruction of structure contour; 3) time determination of structure initiation; 4) plotting of an additional geologic load

  4. Characterization of ZnO:SnO{sub 2} (50:50) thin film deposited by RF magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Cynthia, S. R.; Sanjeeviraja, C.; Ponmudi, S. [Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi-630004 (India); Sivakumar, R., E-mail: krsivakumar1979@yahoo.com [Directorate of Distance Education, Alagappa University, Karaikudi-630004 (India)

    2016-05-06

    Zinc oxide (ZnO) and tin oxide (SnO{sub 2}) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO{sub 2} (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

  5. TPR system: a powerful technique to monitor carbon nanotube formation during chemical vapour deposition; Sistema RTP: uma tecnica poderosa para o monitoramento da formacao de nanotubos de carbono durante o processo por deposicao de vapor quimico

    Energy Technology Data Exchange (ETDEWEB)

    Tristao, Juliana Cristina; Moura, Flavia Cristina Camilo; Lago, Rochel Montero, E-mail: rochel@ufmg.b [Universidade Federal de Minas Gerais (DQ/UFMG), Belo Horizonte, MG (Brazil). Dept. de Quimica; Sapag, Karim [Universidade Nacional de San Luis (Argentina). Lab. de Ciencias de Superficies y Medios Porosos

    2010-07-01

    In this work, a TPR (Temperature Programmed Reduction) system is used as a powerful tool to monitor carbon nanotubes production during CVD (Chemical Vapour Deposition), The experiments were carried out using catalyst precursors based on Fe-Mo supported on Al{sub 2}O{sub 3} and methane as carbon source. As methane reacts on the Fe metal surface, carbon is deposited and H2 is produced. TPR is very sensitive to the presence of H2 and affords information on the temperature where catalyst is active to form different forms of carbon, the reaction kinetics, the catalyst deactivation and carbon yields. (author)

  6. In Situ Synthesis and Characterization of Fe-Based Metallic Glass Coatings by Electrospark Deposition Technique

    Science.gov (United States)

    Burkov, Alexander A.; Pyachin, S. A.; Ermakov, M. A.; Syuy, A. V.

    2017-02-01

    Crystalline FeWMoCrBC electrode materials were prepared by conventional powder metallurgy. Metallic glass (MG) coatings were produced by electrospark deposition onto AISI 1035 steel in argon atmosphere. X-ray diffraction and scanning electron microscopy verified the amorphous structure of the as-deposited coatings. The coatings have a thickness of about 40 microns and a uniform structure. The results of dry sliding wear tests against high-speed steel demonstrated that Fe-based MG coatings had a lower friction coefficient and more than twice the wear resistance for 20 km sliding distance with respect to AISI 1035 steel. High-temperature oxidation treatment of the metal glass coatings at 1073 K in air for 12 h revealed that the oxidation resistance of the best coating was 36 times higher than that for bare AISI 1035 steel. These findings are expected to broaden the applications of electrospark Fe-based MG as highly protective and anticorrosive coatings for mild steel.

  7. A comparison of nodular defect seed geometeries from different deposition techniques

    International Nuclear Information System (INIS)

    Stolz, C.J.; Tench, R.J.; Kozlowski, M.R.; Fornier, A.

    1995-01-01

    A focused ion-beam milling instrument commonly utilized in the semiconductor industry for failure analysis and IC repair, is capable of cross-sectioning nodular defects. Utilizing the instrument's scanning on beam, high-resolution imaging of the seeds that initiate nodular defect growth is possible. In an attempt to understand the origins of these seeds, HfO 2 /SiO 2 and Ta 2 O 5 /SiO 2 coatings were prepared by a variety of coating vendors and different deposition processes including e-beam, magnetron sputtering, and ion beam sputtering. By studying the shape, depth, and composition of the seed, inferences of its origin can be drawn. The boundaries between the nodule and thin film provide insight into the mechanical stability of the nodule. Significant differences in the seed composition, geometry of nodular growth and mechanical stability of the defects for sputtered versus e-beam coatings are reported. Differences in seed shape were also observed from different coating vendors using e-beam deposition of HfO 2 /SiO 2 coatings

  8. Measurement of LHCD edge power deposition through modulation techniques on Alcator C-Mod

    Energy Technology Data Exchange (ETDEWEB)

    Faust, I. C.; Brunner, D.; LaBombard, B.; Parker, R. R.; Baek, S. G.; Chilenksi, M. A.; Hubbard, A.; Hughes, J. W.; Terry, J. L.; Shiraiwa, S.; Walk, J. R.; Wallace, G. M.; Whyte, D. G. [MIT Plasma Science and Fusion Center, Cambridge, MA USA (United States); Edlund, E. [Princeton Plasma Physics Laboratory, Princeton, NJ USA (United States)

    2015-12-10

    The efficiency of LHCD on Alcator C-Mod drops exponentially with line average density. At reactor relevant densities (> 1 · 1020 [m{sup −3}]) no measurable current is driven. While a number of causes have been suggested, no specific mechanism has been shown to be responsible for the loss of current drive at high density. Fast modulation of the LH power was used to isolate and quantify the LHCD deposition within the plasma. Measurements from these plasmas provide unique evidence for determining a root cause. Modulation of LH power in steady plasmas exhibited no correlated change in the core temperature. A correlated, prompt response in the edge suggests that the loss in efficiency is related to a edge absorption mechanism. This follows previous results which found the generation of n{sub ||}-independent SOL currents. Multiple Langmuir probe array measurements of the conducted heat conclude that the lost power is deposited near the last closed flux surface. The heat flux induced by LH waves onto the outer divertor is calculated. Changes in the neutral pressure, ionization and hard X-ray emission at high density highlight the importance of the active divertor in the loss of efficiency. Results of this study implicate a mechanism which may occur over multiple passes, leading to power absorption near the LCFS.

  9. Effect of indium doping level on certain physical properties of CdS films deposited using an improved SILAR technique

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K., E-mail: kkr1365@yahoo.com [P.G. and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur-613 503, Tamil Nadu (India); Senthamilselvi, V. [P.G. and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur-613 503, Tamil Nadu (India); Department of Physics, Kunthavai Naachiyaar Government College for Women (Autonomous), Thanjavur-613 007, Tamil Nadu (India)

    2013-04-01

    The influence of indium (In) doping levels (0, 2, …, 8 at.%) on certain physical properties of cadmium sulphide (CdS) thin films deposited using an improved successive ionic layer adsorption and reaction (ISILAR) method has been studied. In this improved SILAR technique, a fresh anionic solution was introduced after a particular number of dipping cycles in order to achieve good stoichiometry. All the deposited films exhibited cubic phase with (1 1 1) plane as preferential orientation. The calculated crystallite size values are found to be decreased from 54.80 nm to 23.65 nm with the increase in In doping level. The optical study confirmed the good transparency (80%) of the film. A most compact and pinhole free smooth surface was observed for the CdS films with 8 at.% of In doping level. The perceived photoluminescence (PL) bands endorsed the lesser defect crystalline nature of the obtained CdS:In films. The chemical composition analysis (EDAX) showed the near stoichiometric nature of this ISILAR deposited CdS:In films.

  10. Effect of indium doping level on certain physical properties of CdS films deposited using an improved SILAR technique

    International Nuclear Information System (INIS)

    Ravichandran, K.; Senthamilselvi, V.

    2013-01-01

    The influence of indium (In) doping levels (0, 2, …, 8 at.%) on certain physical properties of cadmium sulphide (CdS) thin films deposited using an improved successive ionic layer adsorption and reaction (ISILAR) method has been studied. In this improved SILAR technique, a fresh anionic solution was introduced after a particular number of dipping cycles in order to achieve good stoichiometry. All the deposited films exhibited cubic phase with (1 1 1) plane as preferential orientation. The calculated crystallite size values are found to be decreased from 54.80 nm to 23.65 nm with the increase in In doping level. The optical study confirmed the good transparency (80%) of the film. A most compact and pinhole free smooth surface was observed for the CdS films with 8 at.% of In doping level. The perceived photoluminescence (PL) bands endorsed the lesser defect crystalline nature of the obtained CdS:In films. The chemical composition analysis (EDAX) showed the near stoichiometric nature of this ISILAR deposited CdS:In films.

  11. Fabrication and characterisation of ligand-functionalised ultrapure monodispersed metal nanoparticle nanoassemblies employing advanced gas deposition technique

    Science.gov (United States)

    Geremariam Welearegay, Tesfalem; Cindemir, Umut; Österlund, Lars; Ionescu, Radu

    2018-02-01

    Here, we report for the first time the fabrication of ligand-functionalised ultrapure monodispersed metal nanoparticles (Au, Cu, and Pt) from their pure metal precursors using the advanced gas deposition technique. The experimental conditions during nanoparticle formation were adjusted in order to obtain ultrafine isolated nanoparticles on different substrates. The morphology and surface analysis of the as-deposited metal nanoparticles were investigated using scanning electron microscopy, x-ray diffraction and Fourier transform infra-red spectroscopy, which demonstrated the formation of highly ordered pure crystalline nanoparticles with a relatively uniform size distribution of ∼10 nm (Au), ∼4 nm (Cu) and ∼3 nm (Pt), respectively. A broad range of organic ligands containing thiol or amine functional groups were attached to the nanoparticles to form continuous networks of nanoparticle-ligand nanoassemblies, which were characterised by scanning electron microscopy and x-ray photoelectron spectroscopy. The electrical resistance of the functional nanoassemblies deposited in the gap spacing of two microfabricated parallel Au electrodes patterned on silicon substrates ranged between tens of kΩ and tens of MΩ, which is suitable for use in many applications including (bio)chemical sensors, surface-enhanced Raman spectroscopy and molecular electronic rectifiers.

  12. Using wire shaping techniques and holographic optics to optimize deposition characteristics in wire-based laser cladding.

    Science.gov (United States)

    Goffin, N J; Higginson, R L; Tyrer, J R

    2016-12-01

    In laser cladding, the potential benefits of wire feeding are considerable. Typical problems with the use of powder, such as gas entrapment, sub-100% material density and low deposition rate are all avoided with the use of wire. However, the use of a powder-based source material is the industry standard, with wire-based deposition generally regarded as an academic curiosity. This is because, although wire-based methods have been shown to be capable of superior quality results, the wire-based process is more difficult to control. In this work, the potential for wire shaping techniques, combined with existing holographic optical element knowledge, is investigated in order to further improve the processing characteristics. Experiments with pre-placed wire showed the ability of shaped wire to provide uniformity of wire melting compared with standard round wire, giving reduced power density requirements and superior control of clad track dilution. When feeding with flat wire, the resulting clad tracks showed a greater level of quality consistency and became less sensitive to alterations in processing conditions. In addition, a 22% increase in deposition rate was achieved. Stacking of multiple layers demonstrated the ability to create fully dense, three-dimensional structures, with directional metallurgical grain growth and uniform chemical structure.

  13. Pulse-height defect in single-crystal CVD diamond detectors

    Energy Technology Data Exchange (ETDEWEB)

    Beliuskina, O.; Imai, N. [The University of Tokyo, Center for Nuclear Study, Wako, Saitama (Japan); Strekalovsky, A.O.; Aleksandrov, A.A.; Aleksandrova, I.A.; Ilich, S.; Kamanin, D.V.; Knyazheva, G.N.; Kuznetsova, E.A.; Mishinsky, G.V.; Pyatkov, Yu.V.; Strekalovsky, O.V.; Zhuchko, V.E. [JINR, Flerov Laboratory of Nuclear Reactions, Dubna, Moscow Region (Russian Federation); Devaraja, H.M. [Manipal University, Manipal Centre for Natural Sciences, Manipal, Karnataka (India); Heinz, C. [II. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Giessen (Germany); Heinz, S. [II. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, Giessen (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Hofmann, S.; Kis, M.; Kozhuharov, C.; Maurer, J.; Traeger, M. [GSI Helmholtzzentrum fuer Schwerionenforschung, Darmstadt (Germany); Pomorski, M. [CEA, LIST, Diamond Sensor Laboratory, CEA/Saclay, Gif-sur-Yvette (France)

    2017-02-15

    The pulse-height versus deposited energy response of a single-crystal chemical vapor deposition (scCVD) diamond detector was measured for ions of Ti, Cu, Nb, Ag, Xe, Au, and of fission fragments of {sup 252} Cf at different energies. For the fission fragments, data were also measured at different electric field strengths of the detector. Heavy ions have a significant pulse-height defect in CVD diamond material, which increases with increasing energy of the ions. It also depends on the electrical field strength applied at the detector. The measured pulse-height defects were explained in the framework of recombination models. Calibration methods known from silicon detectors were modified and applied. A comparison with data for the pulse-height defect in silicon detectors was performed. (orig.)

  14. Temperature dependence of stress in CVD diamond films studied by Raman spectroscopy

    Directory of Open Access Journals (Sweden)

    Dychalska Anna

    2015-09-01

    Full Text Available Evolution of residual stress and its components with increasing temperature in chemical vapor deposited (CVD diamond films has a crucial impact on their high temperature applications. In this work we investigated temperature dependence of stress in CVD diamond film deposited on Si(100 substrate in the temperature range of 30 °C to 480 °C by Raman mapping measurement. Raman shift of the characteristic diamond band peaked at 1332 cm-1 was studied to evaluate the residual stress distribution at the diamond surface. A new approach was applied to calculate thermal stress evolution with increasing tempera­ture by using two commonly known equations. Comparison of the residts obtained from the two methods was presented. The intrinsic stress component was calculated from the difference between average values of residual and thermal stress and then its temperature dependence was discussed.

  15. Deposit of thin films of nitrided amorphous carbon using the laser ablation technique

    International Nuclear Information System (INIS)

    Rebollo, P.B.; Escobar A, L.; Camps C, E.; Haro P, E.; Camacho L, M.A.; Muhl S, S.

    2000-01-01

    It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 -4 Torr until 7.5 x 10 -2 Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

  16. Age determination of recent cave deposits using excess Pb-210 - A new technique

    Science.gov (United States)

    Baskaran, M.; Iliffe, Thomas M.

    1993-04-01

    We show that speleothems contain high concentrations of excess Pb-210 and that this Pb-210 excess can be successfully employed to obtain growth rates of speleothems deposited during the last 100 years. Of two specimens analyzed, a tubular 'soda straw' stalactite yielded a longitudinal growth rate of 1.1 mm/yr, while a normal icicle-shaped stalactite had a lateral growth rate of 0.028 mm/yr. The mass growth rates of these two speleothems (149 and 78 mg/yr respectively) are comparable within a factor of two. Studies of fine-scale variations in the isotopic composition of recent speleothems will help to corroborate the validity of palaeoclimate records obtained using longer lived isotopes and extending back into Pleistocene.

  17. Electrospray-deposition of graphene electrodes: a simple technique to build high-performance supercapacitors.

    Science.gov (United States)

    Tang, Huaichao; Yang, Cheng; Lin, Ziyin; Yang, Quanhong; Kang, Feiyu; Wong, Ching Ping

    2015-05-28

    Here we report an electrostatic spray deposition method to prepare three-dimensional porous graphene electrodes for supercapacitor applications. The symmetric supercapacitor exhibits excellent specific capacitance (366 F g(-1) at 1 A g(-1) in 6 M KOH) and long cycle life (108% capacitance retention up to 40 000 cycles). Moreover, the energy densities of the organic and aqueous electrolyte based supercapacitors reach 22.9 and 8.1 Wh kg(-1) when the power densities are 119.2 and 15.4 kW kg(-1), respectively. Compared with the previously reported graphene based supercapacitors, the improved properties could be attributed to the excellent three-dimensional open porous electrode structure, which is favorable for the ion diffusion and electron transport. In addition, this method provides a simple electrode-fabrication route without the involvement of conducting additives and binders. It may find vast applications in thin and miniaturized energy storage scenarios.

  18. Thin films of NdFeB deposited by PLD technique

    International Nuclear Information System (INIS)

    Constantinescu, C.; Scarisoreanu, N.; Moldovan, A.; Dinescu, M.; Petrescu, L.; Epureanu, G.

    2007-01-01

    Neodymium-iron-boron (NdFeB) is a material with important magnetic properties, mostly used in permanent magnet fabrication. Thin layers of NdFeB are needed for miniaturization in electrical engineering, electronics and for high-tech devices. In this paper we applied pulsed lased deposition (PLD) in vacuum for obtaining thin films of NdFeB from stoichiometric targets. The influence of different buffer layers and of the laser parameters (wavelength and fluence) on the NdFeB structures, composition and magnetic properties have been investigated. The obtained structures were characterized by atomic force microscopy (AFM) and optical microscopy. Vibrating sample magnetometry (VSM) has been performed for specific magnetic characterization

  19. Thin films of NdFeB deposited by PLD technique

    Energy Technology Data Exchange (ETDEWEB)

    Constantinescu, C. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania); Scarisoreanu, N. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania); Moldovan, A. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania); Dinescu, M. [National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG 16, RO-077125 Magurele, Bucharest (Romania)]. E-mail: dinescum@ifin.nipne.ro; Petrescu, L. [Department of Electrical Engineering, ' Politehnica' University of Bucharest, 313 Spl. Independentei, 060042 Bucharest (Romania); Epureanu, G. [Department of Electrical Engineering, ' Politehnica' University of Bucharest, 313 Spl. Independentei, 060042 Bucharest (Romania)

    2007-07-31

    Neodymium-iron-boron (NdFeB) is a material with important magnetic properties, mostly used in permanent magnet fabrication. Thin layers of NdFeB are needed for miniaturization in electrical engineering, electronics and for high-tech devices. In this paper we applied pulsed lased deposition (PLD) in vacuum for obtaining thin films of NdFeB from stoichiometric targets. The influence of different buffer layers and of the laser parameters (wavelength and fluence) on the NdFeB structures, composition and magnetic properties have been investigated. The obtained structures were characterized by atomic force microscopy (AFM) and optical microscopy. Vibrating sample magnetometry (VSM) has been performed for specific magnetic characterization.

  20. Evaluation and study of advanced optical contamination, deposition, measurement, and removal techniques. [including computer programs and ultraviolet reflection analysis

    Science.gov (United States)

    Linford, R. M. F.; Allen, T. H.; Dillow, C. F.

    1975-01-01

    A program is described to design, fabricate and install an experimental work chamber assembly (WCA) to provide a wide range of experimental capability. The WCA incorporates several techniques for studying the kinetics of contaminant films and their effect on optical surfaces. It incorporates the capability for depositing both optical and contaminant films on temperature-controlled samples, and for in-situ measurements of the vacuum ultraviolet reflectance. Ellipsometer optics are mounted on the chamber for film thickness determinations, and other features include access ports for radiation sources and instrumentation. Several supporting studies were conducted to define specific chamber requirements, to determine the sensitivity of the measurement techniques to be incorporated in the chamber, and to establish procedures for handling samples prior to their installation in the chamber. A bibliography and literature survey of contamination-related articles is included.

  1. Research Update: Large-area deposition, coating, printing, and processing techniques for the upscaling of perovskite solar cell technology

    Directory of Open Access Journals (Sweden)

    Stefano Razza

    2016-09-01

    Full Text Available To bring perovskite solar cells to the industrial world, performance must be maintained at the photovoltaic module scale. Here we present large-area manufacturing and processing options applicable to large-area cells and modules. Printing and coating techniques, such as blade coating, slot-die coating, spray coating, screen printing, inkjet printing, and gravure printing (as alternatives to spin coating, as well as vacuum or vapor based deposition and laser patterning techniques are being developed for an effective scale-up of the technology. The latter also enables the manufacture of solar modules on flexible substrates, an option beneficial for many applications and for roll-to-roll production.

  2. Organic-inorganic field effect transistor with SnI-based perovskite channel layer using vapor phase deposition technique

    Science.gov (United States)

    Matsushima, Toshinori; Yasuda, Takeshi; Fujita, Katsuhiko; Tsutsui, Tetsuo

    2003-11-01

    High field-effect hole mobility of (formula available in paper)and threshold voltage is -3.2 V) in organic-inorganic layered perovskite film (formula available in paper)prepared by a vapor phase deposition technique have been demonstrated through the octadecyltrichlorosilane treatment of substrate. Previously, the (formula available in paper)films prepared on the octadecyltrichlorosilane-covered substrates using a vapor evaporation showed not only intense exciton absorption and photoluminescence in the optical spectroscopy but also excellent crystallinity and large grain structure in X-ray and atomic force microscopic studies. Especially, the (formula available in paper)structure in the region below few nm closed to the surface of octadecyltrichlorosilane monolayer was drastically improved in comparison with that on the non-covered substrate. Though our initial (formula available in paper)films via a same sequence of preparation of (formula available in paper)and octadecyltrichlorosilane monolayer did not show the field-effect properties because of a lack of spectral, structural, and morphological features. The unformation of favorable (formula available in paper)structure in the very thin region, that is very important for the field-effect transistors to transport electrons or holes, closed to the surface of non-covered (formula available in paper)dielectric layer was also one of the problems for no observation of them. By adding further optimization and development, such as deposition rate of perovskite, substrate heating during deposition, and tuning device architecture, with hydrophobic treatment, the vacuum-deposited (formula available in paper)have achieved above-described high performance in organic-inorganic hybrid transistors.

  3. Impedance study on the corrosion of PVD and CVD titanium nitride coatings

    International Nuclear Information System (INIS)

    Elsener, B.; Rota, A.; Boehni, H.

    1989-01-01

    Titanium nitride (TiN) coatings, produced by physical (PVD) or chemical (CVD) vapor deposition techniques are used routinely to improve the wear and corrosion resistance of a surface. The main problem in using TiN as a protective coating in aggressive environements are pores and pinholes in the coating where the substrate is exposed to the electrolyte. In this work, the electrochemical and corrosion behaviour of TiN films on quartz glass, carbon steel, 304 and 316 stainless steel is studied by polarization curves and electrochemical impedance spectroscopy (EIS) in hydrochloric acid. It is shown that the TiN coating can be used successfully only on substrates that passivate easily. On mild steel rapid corrosion takes place at pores in the coating due to the very noble steady state potential of the TiN coating. The interaction of the metallic substrate with the TiN coating is discussed for the two limiting cases mild steel (active) and 316SS (passive). It is shown that the determination of the coating porosity is possible for the active substrate only. On the passive substrate the occurence of an additional time constant in the high frequency region of the spectrum qualitatively indicates the presence of pores. A quality control of the coatings based on this fact might be possible. (author) 15 refs., 6 figs., 2 tabs

  4. Electrical characteristics of thermal CVD B-doped Si films on highly strained Si epitaxially grown on Ge(100) by plasma CVD without substrate heating

    International Nuclear Information System (INIS)

    Sugawara, Katsutoshi; Sakuraba, Masao; Murota, Junichi

    2010-01-01

    Using an 84% relaxed Ge(100) buffer layer formed on Si(100) by electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD), influence of strain upon electrical characteristics of B-doped Si film epitaxially grown on the Ge buffer have been investigated. For the thinner B-doped Si film, surface strain amount is larger than that of the thicker film, for example, strain amount reaches 2.0% for the thickness of 2.2 nm. It is found that the hole mobility is enhanced by the introduction of strain to Si, and the maximum enhancement of about 3 is obtained. This value is higher than that of the usually reported mobility enhancement by strain using Si 1 -x Ge x buffer. Therefore, introduction of strain using relaxed Ge film formed by ECR plasma enhanced CVD is useful to improve future Si-based device performance.

  5. Applications of prospecting geochemical techniques to the search for and to the study of uranium deposits in metropolitan France

    International Nuclear Information System (INIS)

    Grimbert, Arnold

    1957-01-01

    After having recalled facts which leaded the CEA to use new geochemical techniques for the prospecting of uranium deposits through sampling and analysis of soils and waters, the author describes the organisation and methods implemented for this prospecting activity: team composition for sampling and analysis, role of each engineer and technician in the prospecting stages (preliminary study, routine prospecting, result interpretation), sampling and analysis processes. He also reports campaigns of geochemical prospecting: study of the La Chapelle Largeau deposit (objectives, geological context, preliminary study, routine prospecting, study of geochemical anomalies), tactical research on Verneix indices (study of radioactivity anomaly discovered by radio-prospecting), strategical searches in a non prospected area in the South of Avallon. The author discusses the issues of efficiency and cost price of this geochemical prospecting technique in soils and in waters. Appendices present the equipment and operation modality for soil sampling, and for soil sample preparation, and principles, equipment and products for soil analysis and for water analysis [fr

  6. Carbon thin films deposited by the magnetron sputtering technique using cobalt, copper and nickel as buffer-layers

    International Nuclear Information System (INIS)

    Costa e Silva, Danilo Lopes

    2015-01-01

    In this work, carbon thin films were produced by the magnetron sputtering technique using single crystal substrates of alumina c-plane (0001) and Si (111) and Si (100) substrates, employing Co, Ni and Cu as intermediate films (buffer-layers). The depositions were conducted in three stages, first with cobalt buffer-layers where only after the production of a large number of samples, the depositions using cooper buffer-layers were carried out on Si substrates. Then, depositions were performed with nickel buffer layers using single-crystal alumina substrates. The crystallinity of the carbon films was evaluated by using the technique of Raman spectroscopy and, then, by X-ray diffraction (XRD). The morphological characterization of the films was performed by scanning electron microscopy (SEM and FEG-SEM) and high-resolution transmission electron microscopy (HRTEM). The XRD peaks related to the carbon films were observed only in the results of the samples with cobalt and nickel buffer-layers. The Raman spectroscopy showed that the carbon films with the best degree of crystallinity were the ones produced with Si (111) substrates, for the Cu buffers, and sapphire substrates for the Ni and Co buffers, where the latter resulted in a sample with the best crystallinity of all the ones produced in this work. It was observed that the cobalt has low recovering over the alumina substrates when compared to the nickel. Sorption tests of Ce ions by the carbon films were conducted in two samples and it was observed that the sorption did not occur probably because of the low crystallinity of the carbon films in both samples. (author)

  7. A 3D tomographic EBSD analysis of a CVD diamond thin film

    International Nuclear Information System (INIS)

    Liu Tao; Raabe, Dierk; Zaefferer, Stefan

    2008-01-01

    We have studied the nucleation and growth processes in a chemical vapor deposition (CVD) diamond film using a tomographic electron backscattering diffraction method (3D EBSD). The approach is based on the combination of a focused ion beam (FIB) unit for serial sectioning in conjunction with high-resolution EBSD. Individual diamond grains were investigated in 3-dimensions particularly with regard to the role of twinning.

  8. A 3D tomographic EBSD analysis of a CVD diamond thin film

    Directory of Open Access Journals (Sweden)

    Tao Liu, Dierk Raabe and Stefan Zaefferer

    2008-01-01

    Full Text Available We have studied the nucleation and growth processes in a chemical vapor deposition (CVD diamond film using a tomographic electron backscattering diffraction method (3D EBSD. The approach is based on the combination of a focused ion beam (FIB unit for serial sectioning in conjunction with high-resolution EBSD. Individual diamond grains were investigated in 3-dimensions particularly with regard to the role of twinning.

  9. Preparación de tamices moleculares de carbono por CVD

    OpenAIRE

    Manso, R.; Pajares, J. A.; Albiniak, A.; Broniek, E.; Siemieniewska, T.

    2001-01-01

    Carbon molecular sieves (CMS) have been prepared by chemical vapour deposition (CVD) of carbon from the pyrolysis of benzene molecules on activated carbon surfaces. The pyrolysis of benzene at temperatures in the range 650-850 ºC restricts the accessibility of the micropores due to the creation of constrictions on the microporous network. Temperatures higher than 850 ºC (temperature of carbonisation) add difficulties due to decomposition and sinterization processes. Low flows of nitrogen (30 ...

  10. CVD growth and characterization of 3C-SiC thin films

    Indian Academy of Sciences (India)

    Unknown

    Cubic silicon carbide (3C-SiC) thin films were grown on (100) and (111) Si substrates by CVD technique using ... of grown films were studied using optical microscopy, scanning electron microscopy (SEM), X-ray diffraction (XRD) analysis and X-ray ... the oxide mask gets damaged (Edgar et al 1998). There- fore, lower ...

  11. Hard coatings by plasma CVD on polycarbonate for automotive and optical applications

    International Nuclear Information System (INIS)

    Schmauder, T.; Nauenburg, K.-D.; Kruse, K.; Ickes, G.

    2006-01-01

    In many applications, plastic surfaces need coatings as a protection against abrasion or weathering. Leybold Optics is developing Plasma CVD processes and machinery for transparent hard coatings (THC) for polycarbonate parts. In this paper we present the current features and remaining challenges of this technique. The coatings generally show excellent adhesion. Abrasion resistance is superior to commonly used lacquers. Climate durability of the coating has been improved to pass the tests demanded by automotive specifications. Current activities are focused on improving the durability under exposure to UV radiation. Estimations show that our high-rate plasma CVD hard coating process is also economically competitive to lacquering

  12. Superhydrophobic Copper Surfaces with Anticorrosion Properties Fabricated by Solventless CVD Methods.

    Science.gov (United States)

    Vilaró, Ignasi; Yagüe, Jose L; Borrós, Salvador

    2017-01-11

    Due to continuous miniaturization and increasing number of electrical components in electronics, copper interconnections have become critical for the design of 3D integrated circuits. However, corrosion attack on the copper metal can affect the electronic performance of the material. Superhydrophobic coatings are a commonly used strategy to prevent this undesired effect. In this work, a solventless two-steps process was developed to fabricate superhydrophobic copper surfaces using chemical vapor deposition (CVD) methods. The superhydrophobic state was achieved through the design of a hierarchical structure, combining micro-/nanoscale domains. In the first step, O 2 - and Ar-plasma etchings were performed on the copper substrate to generate microroughness. Afterward, a conformal copolymer, 1H,1H,2H,2H-perfluorodecyl acrylate-ethylene glycol diacrylate [p(PFDA-co-EGDA)], was deposited on top of the metal via initiated CVD (iCVD) to lower the surface energy of the surface. The copolymer topography exhibited a very characteristic and unique nanoworm-like structure. The combination of the nanofeatures of the polymer with the microroughness of the copper led to achievement of the superhydrophobic state. AFM, SEM, and XPS were used to characterize the evolution in topography and chemical composition during the CVD processes. The modified copper showed water contact angles as high as 163° and hysteresis as low as 1°. The coating withstood exposure to aggressive media for extended periods of time. Tafel analysis was used to compare the corrosion rates between bare and modified copper. Results indicated that iCVD-coated copper corrodes 3 orders of magnitude slower than untreated copper. The surface modification process yielded repeatable and robust superhydrophobic coatings with remarkable anticorrosion properties.

  13. Rapid growth of single-layer graphene on the insulating substrates by thermal CVD

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C.Y. [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China); Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Dai, D.; Chen, G.X.; Yu, J.H. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Nishimura, K. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Advanced Nano-processing Engineering Lab, Mechanical Systems Engineering, Kogakuin University (Japan); Lin, C.-T. [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Jiang, N., E-mail: jiangnan@nimte.ac.cn [Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhan, Z.L., E-mail: zl_zhan@sohu.com [Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093 (China)

    2015-08-15

    Highlights: • A rapid thermal CVD process has been developed to directly grow graphene on the insulating substrates. • The treating time consumed is ≈25% compared to conventional CVD procedure. • Single-layer and few-layer graphene can be formed on quartz and SiO{sub 2}/Si substrates, respectively. • The formation of thinner graphene at the interface is due to the fast precipitation rate of carbon atoms during cooling. - Abstract: The advance of CVD technique to directly grow graphene on the insulating substrates is particularly significant for further device fabrication. As graphene is catalytically grown on metal foils, the degradation of the sample properties is unavoidable during transfer of graphene on the dielectric layer. Moreover, shortening the treatment time as possible, while achieving single-layer growth of graphene, is worthy to be investigated for promoting the efficiency of mass production. Here we performed a rapid heating/cooling process to grow graphene films directly on the insulating substrates by thermal CVD. The treating time consumed is ≈25% compared to conventional CVD procedure. In addition, we found that high-quality, single-layer graphene can be formed on quartz, but on SiO{sub 2}/Si substrate only few-layer graphene can be obtained. The pronounced substrate effect is attributed to the different dewetting behavior of Ni films on the both substrates at 950 °C.

  14. Effect of Coating Thickness on the Properties of TiN Coatings Deposited on Tool Steels Using Cathodic Arc Pvd Technique

    Science.gov (United States)

    Mubarak, A.; Akhter, Parvez; Hamzah, Esah; Mohd Toff, Mohd Radzi Hj.; Qazi, Ishtiaq A.

    Titanium nitride (TiN) widely used as hard coating material, was coated on tool steels, namely on high-speed steel (HSS) and D2 tool steel by physical vapor deposition method. The study concentrated on cathodic arc physical vapor deposition (CAPVD), a technique used for the deposition of hard coatings for tooling applications, and which has many advantages. The main drawback of this technique, however, is the formation of macrodroplets (MDs) during deposition, resulting in films with rougher morphology. Various standard characterization techniques and equipment, such as electron microscopy, atomic force microscopy, hardness testing machine, scratch tester, and pin-on-disc machine, were used to analyze and quantify the following properties and parameters: surface morphology, thickness, hardness, adhesion, and coefficient of friction (COF) of the deposited coatings. Surface morphology revealed that the MDs produced during the etching stage, protruded through the TiN film, resulting in film with deteriorated surface features. Both coating thickness and indentation loads influenced the hardness of the deposited coatings. The coatings deposited on HSS exhibit better adhesion compared to those on D2 tool steel. Standard deviation indicates that the coating deposited with thickness around 6.7 μm showed the most stable trend of COF versus sliding distance.

  15. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    Directory of Open Access Journals (Sweden)

    Wagner Anacleto Pinheiro

    2006-03-01

    Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

  16. RF characteristic of MESFET on H-terminated DC arc jet CVD diamond film

    International Nuclear Information System (INIS)

    Liu, J.L.; Li, C.M.; Zhu, R.H.; Guo, J.C.; Chen, L.X.; Wei, J.J.; Hei, L.F.; Wang, J.J.; Feng, Z.H.; Guo, H.; Lv, F.X.

    2013-01-01

    Diamond has been considered to be a potential material for high-frequency and high-power electronic devices due to the excellent electrical properties. In this paper, we reported the radio frequency (RF) characteristic of metal-semiconductor field effect transistor (MESFET) on polycrystalline diamond films prepared by direct current (DC) arc jet chemical vapor deposition (CVD). First, 4 in polycrystalline diamond films were deposited by DC arc jet CVD in gas recycling mode with the deposition rate of 14 μm/h. Then the polished diamond films were treated by microwave hydrogen plasma and the 0.2 μm-gate-length MESFET was fabricated by using Au mask photolithography and electron beam (EB) lithography. The surface conductivity of the H-terminated diamond film and DC and RF performances of the MESFET were characterized. The results demonstrate that, the carrier mobility of 24.6 cm 2 /V s and the carrier density of 1.096 × 10 13 cm −2 are obtained on the surface of H-terminated diamond film. The FET shows the maximum transition frequency (f T ) of 5 GHz and the maximum oscillation frequency (f max ) of 6 GHz at V GS = −0.5 V and V DS = −8 V, which indicates that H-terminated DC arc jet CVD polycrystalline diamond is suitable for the development of high frequency devices.

  17. Atomic force microscopy and Langmuir–Blodgett monolayer technique to assess contact lens deposits and human meibum extracts

    Directory of Open Access Journals (Sweden)

    Sarah Hagedorn

    2015-07-01

    Conclusions: MGD and non-MGD participant-worn CL deposition were found to differ in type, amount, and pattern of lens deposits. Lipids from MGD participants deposited irregularly whereas lipids from non-MGD participants showed more uniformity.

  18. Electric characterization of GaAs deposited on porous silicon by electrodeposition technique

    International Nuclear Information System (INIS)

    Lajnef, M.; Chtourou, R.; Ezzaouia, H.

    2010-01-01

    GaAs thin films were synthesized on porous Si substrate by the electrodeposition technique. The X-ray diffraction studies showed that the as-grown films were crystallised in mixed phase nature orthorhombic and cubic of GaAs. The GaAs film was then electrically characterized using current-voltage (I-V) and capacitance-voltage (C-V) techniques by the way of Al/GaAs Schottky junctions. The electric analysis allowed us to determine the n factor and the barrier height φ b0 parameters of Al/GaAs Schottky junctions. The (C-V) characteristics were recorded at frequency signal 1 MHz in order to identify the effect of the surface states on the behaviour of the capacitance of the device.

  19. Electric characterization of GaAs deposited on porous silicon by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Lajnef, M., E-mail: Mohamed.lajnef@yahoo.fr [Laboratoire de Photovoltaique et de Semi-conducteurs, Centre de Recherche et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia); Chtourou, R.; Ezzaouia, H. [Laboratoire de Photovoltaique et de Semi-conducteurs, Centre de Recherche et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)

    2010-03-01

    GaAs thin films were synthesized on porous Si substrate by the electrodeposition technique. The X-ray diffraction studies showed that the as-grown films were crystallised in mixed phase nature orthorhombic and cubic of GaAs. The GaAs film was then electrically characterized using current-voltage (I-V) and capacitance-voltage (C-V) techniques by the way of Al/GaAs Schottky junctions. The electric analysis allowed us to determine the n factor and the barrier height {phi}{sub b0} parameters of Al/GaAs Schottky junctions. The (C-V) characteristics were recorded at frequency signal 1 MHz in order to identify the effect of the surface states on the behaviour of the capacitance of the device.

  20. Application of physical separation techniques for waste utilization and management - case studies from Indian uranium deposits

    International Nuclear Information System (INIS)

    Anand Rao, K.; Sreenivas, T.

    2013-01-01

    The importance of physical beneficiation techniques in metallurgical industry showed gradual decline due to decreasing ore grades and very-fine size dissemination of valuable minerals in the host matrix. However, this technology regained prominence in recent past due to their utility in resource recycle, waste utilization, waste treatment and environmental remediation. Hybrid processes combined with physical, chemical and biological technology is now developing such that the idea of sustainable development is implemented. The uranium ore processing industry has always been under intense public scanner for some of the apprehensions, chiefly radioactivity, inspite of its immense energy delivering potential. Besides this, the chemical compounds formed due to gangue mineral reactivity and their carry-over to tailings pond added further owes. However, conscious scientific efforts are being made to contain these hazards to permissible levels by application of various remedial methods of which the physical separation techniques too are quite prominent

  1. Nuclear techniques for in situ evaluation of coal and mineral deposits

    International Nuclear Information System (INIS)

    Borsaru, M.

    1993-01-01

    This paper reviews developments in in situ analysis of minerals and coal by nuclear borehole logging. Developments in the oil, gas and uranium industries are not discussed in the present paper unless they have direct applications in the mineral industry (e.g. multi-element analysis and development of spectral litho-density tools). The review covers techniques developed mostly in the last decade and is based on work published in North America, Europe and Australia. (author)

  2. Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique

    Science.gov (United States)

    Qiang, Lei; Liang, Xiaoci; Cai, Guangshuo; Pei, Yanli; Yao, Ruohe; Wang, Gang

    2018-06-01

    Indium zinc oxide (IZO) thin film transistor (TFT) deposited by solution method is of considerable technological interest as it is a key component for the fabrication of flexible and cheap transparent electronic devices. To obtain a principal understanding of physical properties of solution-processed IZO TFT, a new drain current model that account for the charge transport is proposed. The formulation is developed by incorporating the effect of gate voltage on mobility and threshold voltage with the carrier charges. It is demonstrated that in IZO TFTs the below threshold regime should be divided into two sections: EC - EF > 3kT and EC - EF ≤ 3kT, where kT is the thermal energy, EF and EC represent the Fermi level and the conduction band edge, respectively. Additionally, in order to describe conduction mechanisms more accurately, the extended mobility edge model is conjoined, which can also get rid of the complicated and lengthy computations. The good agreement between measured and calculated results confirms the efficiency of this model for the design of integrated large-area thin film circuits.

  3. Hydrogen ratios and profiles in deposited amorphous and polycrystalline films and in metals using nuclear techniques

    International Nuclear Information System (INIS)

    Benenson, R.E.; Feldman, L.C.; Bagley, B.G.

    1980-01-01

    Plasma- and chemical vapor deposited films containing hydrogen, Si, B and O, but of unknown thickness and stoichiometry have been assigned concentration ratios through a combination of H-profiling using the 1 H( 15 N,αγ) 12 C(4.43 MeV) reaction and RBS analysis. Relatively intense 15 N ++ beams exceeding the 6.38 MeV resonance energy have been obtained from a 3.75 MeV accelerator with a commercial ion source and terminal analysis. A discussion is given of the method of obtaining film concentration ratios in some representative cases. A search was made for H at the SiO 2 -Si interface. Some preliminary investigations have been made on the H concentration in several metals as supplied: Nb, V, Ta, Al, Ni, OFHC Cu, Ti, Mo and steel and on the effect of acid dips in loading H. Hydrogen in acid-loaded steel migrated under the influence of the probing 15 N beam, but relaxed back when the beam was removed. (orig.)

  4. Identification of sources of tar balls deposited along the Goa coast, India, using fingerprinting techniques

    International Nuclear Information System (INIS)

    Suneel, V.; Vethamony, P.; Zakaria, M.P.; Naik, B.G.; Prasad, K.V.S.R.

    2013-01-01

    Highlights: ► This is first fingerprinting study in India on identification of source of tar balls. ► Tar balls were formed from tanker-wash spills and they resemble floating tar ball. ► δ 13 C values of Bombay High crude oil and the present tar balls do not match. ► Compound specific stable carbon isotope analysis confirmed the source of tar balls. ► Source is confirmed as the South East Asian Crude Oil and not the Bombay High crude. -- Abstract: Deposition of tar balls along the coast of Goa, India is a common phenomenon during the southwest monsoon. Representative tar ball samples collected from various beaches of Goa and one Bombay High (BH) crude oil sample were subjected to fingerprint analysis based on diagnostic ratios of n-alkane, biomarkers of pentacyclic tri-terpanes and compound specific stable carbon isotope (δ 13 C) analysis to confirm the source. The results were compared with the published data of Middle East Crude Oil (MECO) and South East Asian Crude Oil (SEACO). The results revealed that the tar balls were from tanker-wash derived spills. The study also confirmed that the source is not the BH, but SEACO. The present study suggests that the biomarkers of alkanes and hopanes coupled with stable carbon isotope analysis act as a powerful tool for tracing the source of tar balls, particularly when the source specific biomarkers fail to distinguish the source

  5. Numerical Simulation of Molten Flow in Directed Energy Deposition Using an Iterative Geometry Technique

    Science.gov (United States)

    Vincent, Timothy J.; Rumpfkeil, Markus P.; Chaudhary, Anil

    2018-06-01

    The complex, multi-faceted physics of laser-based additive metals processing tends to demand high-fidelity models and costly simulation tools to provide predictions accurate enough to aid in selecting process parameters. Of particular difficulty is the accurate determination of melt pool shape and size, which are useful for predicting lack-of-fusion, as this typically requires an adequate treatment of thermal and fluid flow. In this article we describe a novel numerical simulation tool which aims to achieve a balance between accuracy and cost. This is accomplished by making simplifying assumptions regarding the behavior of the gas-liquid interface for processes with a moderate energy density, such as Laser Engineered Net Shaping (LENS). The details of the implementation, which is based on the solver simpleFoam of the well-known software suite OpenFOAM, are given here and the tool is verified and validated for a LENS process involving Ti-6Al-4V. The results indicate that the new tool predicts width and height of a deposited track to engineering accuracy levels.

  6. Numerical Simulation of Molten Flow in Directed Energy Deposition Using an Iterative Geometry Technique

    Science.gov (United States)

    Vincent, Timothy J.; Rumpfkeil, Markus P.; Chaudhary, Anil

    2018-03-01

    The complex, multi-faceted physics of laser-based additive metals processing tends to demand high-fidelity models and costly simulation tools to provide predictions accurate enough to aid in selecting process parameters. Of particular difficulty is the accurate determination of melt pool shape and size, which are useful for predicting lack-of-fusion, as this typically requires an adequate treatment of thermal and fluid flow. In this article we describe a novel numerical simulation tool which aims to achieve a balance between accuracy and cost. This is accomplished by making simplifying assumptions regarding the behavior of the gas-liquid interface for processes with a moderate energy density, such as Laser Engineered Net Shaping (LENS). The details of the implementation, which is based on the solver simpleFoam of the well-known software suite OpenFOAM, are given here and the tool is verified and validated for a LENS process involving Ti-6Al-4V. The results indicate that the new tool predicts width and height of a deposited track to engineering accuracy levels.

  7. Structure and Properties of Diamond-Like Carbon Films Deposited by PACVD Technique on Light Alloys

    Directory of Open Access Journals (Sweden)

    Tański T.

    2016-09-01

    Full Text Available The investigations presented in this paper describe surface treatment performed on samples of heat-treated cast magnesium and aluminium alloy. The structure and chemical composition as well as the functional and mechanical properties of the obtained gradient/monolithic films were analysed by high resolution transmission electron microscopy and scanning electron microscopy, Raman spectroscopy, the ball-on-disk tribotester and scratch testing. Moreover, investigation of the electrochemical corrosion behaviour of the samples was carried out by means of potentiodynamic polarisation curves in 1-M NaCl solution. The coatings produced by chemical vapour deposition did not reveal any delamination or defects and they adhere closely to the substrate. The coating thickness was in a range of up to 2.5 microns. Investigations using Raman spectra of the DLC films confirmed a multiphase character of the diamond-like carbon layer, revealing the sp2 and sp3 electron hybridisation responsible for both the hardness and the friction coefficient. The best wear resistance test results were obtained for the magnesium alloy substrate - AZ61, for which the measured value of the friction path length was equal to 630 m.

  8. CVD diamond Brewster window: feasibility study by FEM analyses

    Directory of Open Access Journals (Sweden)

    Vaccaro A.

    2012-09-01

    Full Text Available Chemical vapor deposition (CVD diamond windows are a crucial component in heating and current drive (H&CD applications. In order to minimize the amount of reflected power from the diamond disc, its thickness must match the desired beam wavelength, thus proper targeting of the plasma requires movable beam reflectors. This is the case, for instance, of the ITER electron cyclotron H&CD system. However, looking at DEMO, the higher heat loads and neutron fluxes could make the use of movable parts close to the plasma difficult. The issue might be solved by using gyrotrons able to tune the beam frequency to the desired resonance, but this concept requires transmission windows that work in a given frequency range, such as the Brewster window. It consists of a CVD diamond disc brazed to two copper cuffs at the Brewster angle. The brazing process is carried out at about 800°C and then the temperature is decreased down to room temperature. Diamond and copper have very different thermal expansion coefficients, therefore high stresses build up during the cool down phase that might lead to failure of the disc. Considering also the complex geometry of the window with the skewed position of the disc, analyses are required in the first place to check its feasibility. The cool down phase was simulated by FEM structural analyses for several geometric and constraint configurations of the window. A study of indirect cooling of the window by water was also performed considering a HE11 mode beam. The results are here reported.

  9. Organic solar cells using CVD-grown graphene electrodes

    International Nuclear Information System (INIS)

    Kim, Hobeom; Han, Tae-Hee; Lim, Kyung-Geun; Lee, Tae-Woo; Bae, Sang-Hoon; Ahn, Jong-Hyun

    2014-01-01

    We report on the development of flexible organic solar cells (OSCs) incorporating graphene sheets synthesized by chemical vapor deposition (CVD) as transparent conducting electrodes on polyethylene terephthalate (PET) substrates. A key barrier that must be overcome for the successful fabrication of OSCs with graphene electrodes is the poor-film properties of water-based poly(3,4-ethylenedioxythiphene):poly(styrenesulfonate) (PEDOT:PSS) when coated onto hydrophobic graphene surfaces. To form a uniform PEDOT:PSS film on a graphene surface, we added perfluorinated ionomers (PFI) to pristine PEDOT:PSS to create ‘GraHEL’, which we then successfully spin coated onto the graphene surface. We systematically investigated the effect of number of layers in layer-by-layer stacked graphene anode of an OSC on the performance parameters including the open-circuit voltage (V oc ), short-circuit current (J sc ), and fill factor (FF). As the number of graphene layers increased, the FF tended to increase owing to lower sheet resistance, while J sc tended to decrease owing to the lower light absorption. In light of this trade-off between sheet resistance and transmittance, we determined that three-layer graphene (3LG) represents the best configuration for obtaining the optimal power conversion efficiency (PCE) in OSC anodes, even at suboptimal sheet resistances. We finally developed efficient, flexible OSCs with a PCE of 4.33%, which is the highest efficiency attained so far by an OSC with CVD-grown graphene electrodes to the best of our knowledge. (paper)

  10. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Ahumada-Lazo, R.; Torres-Martínez, L.M. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Ruíz-Gómez, M.A. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Departmento de Física Aplicada, CINVESTAV-IPN, Antigua Carretera a Progreso km 6, Mérida, Yucatán 97310, México (Mexico); Vega-Becerra, O.E. [Centro de Investigación en Materiales Avanzados S.C, Alianza norte 202, Parque de Investigación e Innovación Tecnológica, C.P. 66600 Apodaca Nuevo León, México (Mexico); and others

    2014-12-15

    Graphical abstract: - Highlights: • Decolorization of Orange G dye using highly c-axis-oriented ZnO thin films. • The flake-shaped film shows superior and stable photoactivity at a wide range of pH. • The highest photodecolorization was achieved at pH of 7. • The exposure of (101) and (100) facets enhanced the photoactivity. • ZnO thin films exhibit a promising performance as recyclable photocatalysts. - Abstract: The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV–visible spectroscopy (UV–Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media.

  11. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    International Nuclear Information System (INIS)

    Ahumada-Lazo, R.; Torres-Martínez, L.M.; Ruíz-Gómez, M.A.; Vega-Becerra, O.E.

    2014-01-01

    Graphical abstract: - Highlights: • Decolorization of Orange G dye using highly c-axis-oriented ZnO thin films. • The flake-shaped film shows superior and stable photoactivity at a wide range of pH. • The highest photodecolorization was achieved at pH of 7. • The exposure of (101) and (100) facets enhanced the photoactivity. • ZnO thin films exhibit a promising performance as recyclable photocatalysts. - Abstract: The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV–visible spectroscopy (UV–Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media

  12. Development of Functional Thin Polymer Films Using a Layer-by-Layer Deposition Technique.

    Science.gov (United States)

    Yoshida, Kentaro

    2017-01-01

    Functional thin films containing insulin were prepared using layer-by-layer (LbL) deposition of insulin and negatively- or positively-charged polymers on the surface of solid substrates. LbL films composed of insulin and negatively-charged polymers such as poly(acrylic acid) (PAA), poly(vinylsulfate) (PVS), and dextran sulfate (DS) were prepared through electrostatic affinity between the materials. The insulin/PAA, insulin/PVS, and insulin/DS films were stable in acidic solutions, whereas they decomposed under physiological conditions as a result of a change in the net electric charge of insulin from positive to negative. Interestingly, the insulin-containing LbL films were stable even in the presence of a digestive-enzyme (pepcin) at pH 1.4 (stomach pH). In contrast, LbL films consisting of insulin and positively-charged polymers such as poly(allylamine hydrochloride) (PAH) decomposed in acidic solutions due to the positive charges of insulin generated in acidic media. The insulin-containing LbL films can be prepared not only on the surface of flat substrates, such as quartz slides, but also on the surface of microparticles, such as poly(lactic acid) (PLA) microbeads. Thus, insulin-containing LbL film-coated PLA microbeads can be handled as a powder. In addition, insulin-containing microcapsules were prepared by coating LbL films on the surface of insulin-doped calcium carbonate (CaCO 3 ) microparticles, followed by dissolution of the CaCO 3 core. The release of insulin from the microcapsules was accelerated at pH 7.4, whereas it was suppressed in acidic solutions. These results suggest the potential use of insulin-containing microcapsules in the development of oral formulations of insulin.

  13. Effect of mixture ratios and nitrogen carrier gas flow rates on the morphology of carbon nanotube structures grown by CVD

    CSIR Research Space (South Africa)

    Malgas, GF

    2008-02-01

    Full Text Available This paper reports on the growth of carbon nanotubes (CNTs) by thermal Chemical Vapour Deposition (CVD) and investigates the effects of nitrogen carrier gas flow rates and mixture ratios on the morphology of CNTs on a silicon substrate by vaporizing...

  14. A graphical technique for distinguishing plant material and soil from atmospheric deposition in biomonitors

    International Nuclear Information System (INIS)

    Rahn, K.A.

    2000-01-01

    The paper explores the limits to which a new graphical technique can distinguish the various hierarchical levels of sources of trace elements within biomonitors. When applied to data from Portuguese lichens, it appears to resolve four levels of sources, from plant material down to individual types of pollution. Careful factor analysis appears to offer very similar results, being weaker than the graphical method in some aspects and stronger in others. As a result, it now seems possible to determine sources for elements in lichens with better precision and confidence than was available previously. (author)

  15. Soft x-ray-controlled dose deposition in yeast cells: techniques, model, and biological assessment

    Science.gov (United States)

    Milani, Marziale; Batani, Dimitri; Conti, Aldo; Masini, Alessandra; Costato, Michele; Pozzi, Achille; Turcu, I. C. Edmond

    1996-12-01

    A procedure is presented to release soft x-rays onto yeast cell membrane allegedly damaging the resident enzymatic processes connected with fermentation. The damage is expected to be restricted to regulating fermentation processes without interference with respiration. By this technique fermentation is followed leading to CO2 production, and respiration resulting in global pressure measurements. A solid state pressure sensor system has been developed linked to a data acquisition system. Yeast cells cultures have been investigated at different concentrations and with different nutrients. A non-monotone response in CO2 production as a function of the delivered x-ray dose is observed.

  16. A beam radiation monitor based on CVD diamonds for SuperB

    Science.gov (United States)

    Cardarelli, R.; Di Ciaccio, A.

    2013-08-01

    Chemical Vapor Deposition (CVD) diamond particle detectors are in use in the CERN experiments at LHC and at particle accelerator laboratories in Europe, USA and Japan mainly as beam monitors. Nowadays it is considered a proven technology with a very fast signal read-out and a very high radiation tolerance suitable for measurements in high radiation environment zones i.e. near the accelerators beam pipes. The specific properties of CVD diamonds make them a prime candidate for measuring single particles as well as high-intensity particle cascades, for timing measurements on the sub-nanosecond scale and for beam protection systems in hostile environments. A single-crystalline CVD (scCVD) diamond sensor, read out with a new generation of fast and high transition frequency SiGe bipolar transistor amplifiers, has been tested for an application as radiation monitor to safeguard the silicon vertex tracker in the SuperB detector from excessive radiation damage, cumulative dose and instantaneous dose rates. Test results with 5.5 MeV alpha particles from a 241Am radioactive source and from electrons from a 90Sr radioactive source are presented in this paper.

  17. Critical assessment of the deposition based dosimetric technique for radon/thoron decay products

    International Nuclear Information System (INIS)

    Mayya, Y.S.

    2010-01-01

    Inhalation doses due to radon ( 222 Rn) and thoron ( 220 Rn) are predominantly contributed by their decay products and not due to the gases themselves. Decay product measurements are being carried out essentially by either short-term active measurement like by air-sampling on a substrate followed by alpha or beta counting or by continuous active monitoring techniques based on silicon barrier detector. However, due to non-availability of satisfactory passive measurement techniques for the progeny species, it has been a usual practice to estimate the long time averaged progeny concentration from measured gas concentration using an assumed equilibrium factor. To be accurate, one is required to measure the equilibrium factor in situ along with the gas concentration. This being not practical, the assigned equilibrium factor (0.4 for indoor and 0.8 for outdoor for 222 Rn) approach has been an inevitable, though uncertain, part of the dosimetric strategies in both occupational and public domains. Further, in the case of thoron decay products however, equilibrium factor is of far more questionable validity. Thus, there is a need to shift from gas based dosimetric paradigm to that based on direct detection of progeny species

  18. Atmospheric heavy metal deposition in Northern Vietnam: Hanoi and Thainguyen case study using the moss biomonitoring technique, INAA and AAS.

    Science.gov (United States)

    Viet, Hung Nguyen; Frontasyeva, Marina Vladimirovna; Thi, Thu My Trinh; Gilbert, Daniel; Bernard, Nadine

    2010-06-01

    The moss technique is widely used to monitor atmospheric deposition of heavy metals in many countries in Europe, whereas this technique is scarcely used in Asia. To implement this international reliable and cheap methodology in the Asian countries, it is necessary to find proper moss types typical for the Asian environment and suitable for the biomonitoring purposes. Such a case study was undertaken in Vietnam for assessing the environmental situation in strongly contaminated areas using local species of moss Barbula indica. The study is focused on two areas characterized by different pollution sources: the Hanoi urban area and the Thainguyen metallurgical zone. Fifty-four moss samples were collected there according to standard sampling procedure adopted in Europe. Two complementary analytical techniques, atomic absorption spectrometry (AAS) and instrumental neutron activation analysis (INAA), were used for determination of elemental concentrations in moss samples. To characterize the pollution sources, multivariate statistical analysis was applied. A total of 38 metal elements were determined in the moss by the two analytical techniques. The results of descriptive statistics of metal concentration in moss from the city center and periphery of Hanoi determined by AAS are presented. The similar results for moss from Thainguyen province determined by INAA and AAS are given also. A comparison of mean elemental concentrations in moss of this work with those in different environmental conditions of other authors provides reasonable information on heavy metal atmospheric deposition levels. Factor loadings and factor scores were used to identify and apportion contamination sources at the sampling sites. The values of percentage of total of factors show two highly different types of pollution in the two examined areas-the Hanoi pollution composition with high portion of urban-traffic activity and soil dust (62%), and the one of Thainguyen with factors related to industrial

  19. Growth, characterization and properties of CVD diamond films for applications as radiation detectors

    International Nuclear Information System (INIS)

    Sciorti, S.

    1999-01-01

    The aim of the work is to give a picture of the current state of the art of CVD (chemical vapour deposition) diamond. The interest is due to the capability to grow over large areas a material with physical properties suitable for an impressive number of applications. The authors focuses on the potential of diamond as a radiation detector and gets into details of the huge field that extends from the thermochemistry of the deposition process to the test of a diamond-based tracker with a fast readout electronics

  20. Atmospheric deposition of heavy metals in transilvanian plateau of romania studied by the moss bio monitoring Technique employing nuclear and related analytical Techniques and gis technology

    International Nuclear Information System (INIS)

    Lucaciu, Adriana; Craciun, L.; Cuculeanu, V.; Eseanu, D.

    2001-01-01

    This paper presents data for 39 elements of 69 moss samples (Hypnum cupressiforme) collected in the Transilvanian Plateau of Romania. This results have obtained in the framework of the project Atmospheric Deposition of Heavy Metals in Rural and Urban Areas of Romania Studied by the Moss Bio monitoring Technique Employing Nuclear and Related Analytical Techniques and GIS Technology carried out under the auspices of the International Atomic Energy Agency, Vienna.The samples collected have been analyzed by ENAA with the exception of Cu, Cd, and Pb which were determined by AAS. IAEA certified materials were used to ensure the quality of the measurements. The regional concentration variations of selected elements are presented in the form of maps constructed by GIS technology. Extremely high values are observed for elements such as Cu, Zn, As and Sb in parts of this territory affected by local metal industries. The levels are among the highest observed in the world, and could be partly responsible for the unfortunate health situation in some of these areas

  1. Optimization of cathodic arc deposition and pulsed plasma melting techniques for growing smooth superconducting Pb photoemissive films for SRF injectors

    Science.gov (United States)

    Nietubyć, Robert; Lorkiewicz, Jerzy; Sekutowicz, Jacek; Smedley, John; Kosińska, Anna

    2018-05-01

    Superconducting photoinjectors have a potential to be the optimal solution for moderate and high current cw operating free electron lasers. For this application, a superconducting lead (Pb) cathode has been proposed to simplify the cathode integration into a 1.3 GHz, TESLA-type, 1.6-cell long purely superconducting gun cavity. In the proposed design, a lead film several micrometres thick is deposited onto a niobium plug attached to the cavity back wall. Traditional lead deposition techniques usually produce very non-uniform emission surfaces and often result in a poor adhesion of the layer. A pulsed plasma melting procedure reducing the non-uniformity of the lead photocathodes is presented. In order to determine the parameters optimal for this procedure, heat transfer from plasma to the film was first modelled to evaluate melting front penetration range and liquid state duration. The obtained results were verified by surface inspection of witness samples. The optimal procedure was used to prepare a photocathode plug, which was then tested in an electron gun. The quantum efficiency and the value of cavity quality factor have been found to satisfy the requirements for an injector of the European-XFEL facility.

  2. Enhancement of the optical and electrical properties of ITO thin films deposited by electron beam evaporation technique

    Science.gov (United States)

    Ali, H. M.; Mohamed, H. A.; Mohamed, S. H.

    2005-08-01

    Indium tin oxide (ITO) is widely utilized in numerous industrial applications due to its unique combined properties of transparency to visible light and electrical conductivity. ITO films were deposited on glass substrates by an electron beam evaporation technique at room temperature from bulk samples, with different thicknesses. The film with 1500 Å thick was selected to perform annealing in the temperature range of 200 400 °C and annealing for varying times from 15 to 120 min at 400 °C. The X-ray diffraction of the films was analyzed in order to investigate its dependence on thickness, and annealing. Electrical and optical measurements were also carried out. Transmittance, optical energy gap, refractive index, carrier concentration, thermal emissivity and resistivity were investigated. It was found that the as-deposited films with different thicknesses were highly absorbing and have relatively poor electrical properties. The films become opaque with increasing the film thickness. After thermal annealing, the resistance decreases and a simultaneous variation in the optical transmission occurs. A transmittance value of 85.5% in the IR region and 82% in the visible region of the spectrum and a resistivity of 2.8 × 10-4 Ω Cm were obtained at annealing temperature of 400 °C for 120 min.

  3. Characteristics of the streak clays of the hyacinth gold deposit by the techniques of DRX and AT

    International Nuclear Information System (INIS)

    Trueba Gaetano, R.; Cabrera Diaz, I.; Casanova Gomez, A.; Aguila Terry, A.; Martinez Montalvo, A.; Canel Carreras, L.; Rodriguez Garcia, J. C.; Alonso Perez, J. A.

    2016-01-01

    It is exposed the investigative work of the mineralogical characteristics of different types of clays present in the veins of the Oro Jacinto deposit through the use of XRD and TA analytical techniques, supported by a study of particle size in the range of 2 mm to 63 μm. Significant feature of these samples is that being crushed they generated high content of fine material below 0.074 mm. This size particles range is presented between 17.68% and 50.78% of samples volume, majority particles being smaller than 0.063 mm, this interstratificated fine material with different types of clay makes the fraction below 74 μm present characteristics of clayey material. The results of XRD analysis and comparative Thermo gravimetric that are achieved for samples of 'Jacinto' gold vein deposit indicate that the clays presented in the fine fractions are: chlorite-montmorillonite; illite; hidromoscovite and muscovite, which turned out to be higher in samples of the grain B eatriz . During the ores formation process of the veins S ur Elena , it is evident that the hydrothermal fluids that led to the formation of the rocks, experienced greater degree of alteration during its transformation into argillite, which is manifested in three mineralogical regularities: Low crystallinity of the chlorite-montmorillonite clay. Transformation of muscovite - hidromoscovite into illite. Presence of abundant calcite in some samples. Higher concentrations of iron oxides (goethite). (Author)

  4. Estimates of soil erosion and deposition of cultivated soil of Nakhla watershed, Morocco, using 137Cs technique and calibration models

    International Nuclear Information System (INIS)

    Bouhlassa, S.; Moukhchane, M.; Aiachi, A.

    2000-01-01

    Despite the effective threat of erosion, for soil preservation and productivity in Morocco, there is still only limited information on rates of soil loss involved. This study is aimed to establish long-term erosion rates on cultivated land in the Nakhla watershed located in the north of the country, using 137 Cs technique. Two sampling strategies were adopted. The first is aimed at establishing areal estimates of erosion, whereas the second, based on a transect approach, intends to determine point erosion. Twenty-one cultivated sites and seven undisturbed sites apparently not affected by erosion or deposition were sampled to 35 cm depth. Nine cores were collected along the transect of 149 m length. The assessment of erosion rates with models varying in complexity from the simple Proportional Model to more complex Mass Balance Models which attempts to include the processes controlling the redistribution of 137 Cs in soil, enables us to demonstrate the significance of soil erosion problem on cultivated land. Erosion rates rises up to 50 t ha -1 yr -1 . The 137 Cs derived erosion rates provide a reliable representation of water erosion pattern in the area, and indicate the importance of tillage process on the redistribution of 137 Cs in soil. For aggrading sites a Constant Rate Supply (CRS) Model had been adapted and introduced to estimate easily the depositional rate. (author) [fr

  5. Microstructural, nanomechanical, and microtribological properties of Pb thin films prepared by pulsed laser deposition and thermal evaporation techniques

    Energy Technology Data Exchange (ETDEWEB)

    Broitman, Esteban, E-mail: esbro@ifm.liu.se [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping (Sweden); Flores-Ruiz, Francisco J. [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping, Sweden and Centro de Investigación y de Estudios Avanzados del I.P.N., Unidad Querétaro, Querétaro 76230 (Mexico); Di Giulio, Massimo [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Gontad, Francisco; Lorusso, Antonella; Perrone, Alessio [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce, Italy and INFN-Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy)

    2016-03-15

    In this work, the authors compare the morphological, structural, nanomechanical, and microtribological properties of Pb films deposited by thermal evaporation (TE) and pulsed laser deposition (PLD) techniques onto Si (111) substrates. Films were investigated by scanning electron microscopy, surface probe microscopy, and x-ray diffraction in θ-2θ geometry to determine their morphology, root-mean-square (RMS) roughness, and microstructure, respectively. TE films showed a percolated morphology with densely packed fibrous grains while PLD films had a granular morphology with a columnar and tightly packed structure in accordance with the zone growth model of Thornton. Moreover, PLD films presented a more polycrystalline structure with respect to TE films, with RMS roughness of 14 and 10 nm, respectively. Hardness and elastic modulus vary from 2.1 to 0.8 GPa and from 14 to 10 GPa for PLD and TE films, respectively. A reciprocal friction test has shown that PLD films have lower friction coefficient and wear rate than TE films. Our study has demonstrated for first time that, at the microscale, Pb films do not show the same simple lubricious properties measured at the macroscale.

  6. Improvement of the inlet system for the spray-jet technique for use in spectroscopic studies and molecular deposition

    International Nuclear Information System (INIS)

    Yamada, Toshiki; Shinohara, Hidenori; Mashiko, Shinro

    2006-01-01

    We previously developed a molecular beam apparatus with a spray-jet technique in order to produce a molecular beam of non-volatile molecules in vacuum from the sprayed mist of a sample solution. The apparatus is for use in spectroscopic studies or a means of molecular deposition. The spray-jet inlet system consisted of an ultrasonic nebulizer, an inlet chamber and a pulsed nozzle. In the present paper, further improvements to the spray-jet inlet system are reported. The main improvement is the introduction of a pneumatic nebulizer to replace the previous ultrasonic nebulizer. The efficiency of molecular beam generation was evaluated on the basis of the signal intensity of the resonantly enhanced multiphoton ionization time-of-flight mass (REMPI-TOFMS) spectra for a Rhodamine B/methanol solution and the amount of sample consumed. The introduction of the pneumatic nebulizer increased the efficiency by a factor of 20

  7. Development of CVD diamond radiation detectors

    CERN Document Server

    Adam, W; Berdermann, E; Bogani, F; Borchi, E; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fisch, D; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E A; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Knöpfle, K T; Krammer, Manfred; Manfredi, P F; Meier, D; Mishina, M; Le Normand, F; Pan, L S; Pernegger, H; Pernicka, Manfred; Pirollo, S; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Turchetta, R; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zoeller, M M

    1998-01-01

    Diamond is a nearly ideal material for detecting ionizing radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow a diamond detector to be used in high ra diation, high temperature and in aggressive chemical media. We have constructed charged particle detectors using high quality CVD diamond. Characterization of the diamond samples and various detect ors are presented in terms of collection distance, $d=\\mu E \\tau$, the average distance electron-hole pairs move apart under the influence of an electric field, where $\\mu$ is the sum of carrier mo bilities, $E$ is the applied electric field, and $\\tau$ is the mobility weighted carrier lifetime. Over the last two years the collection distance increased from $\\sim$ 75 $\\mu$m to over 200 $\\mu$ m. With this high quality CVD diamond a series of micro-strip and pixel particle detectors have been constructed. These devices were tested to determine their position resolution and signal to n oise performance. Diamond detectors w...

  8. TSC response of irradiated CVD diamond films

    CERN Document Server

    Borchi, E; Bucciolini, M; Guasti, A; Mazzocchi, S; Pirollo, S; Sciortino, S

    1999-01-01

    CVD diamond films have been irradiated with electrons, sup 6 sup 0 Co photons and protons in order to study the dose response to exposure to different particles and energies and to investigate linearity with dose. The Thermally Stimulated Current (TSC) has been studied as a function of the dose delivered to polymethilmetacrilate (PMMA) in the range from 1 to 12 Gy with 20 MeV electrons from a linear accelerator. The TSC spectrum has revealed the presence of two components with peak temperatures of about 470 and 520 K, corresponding to levels lying in the diamond band gap with activation energies of the order of 0.7 - 1 eV. After the subtraction of the exponential background the charge emitted during the heating scan has been evaluated and has been found to depend linearly on the dose. The thermally emitted charge of the CVD diamond films has also been studied using different particles. The samples have been irradiated with the same PMMA dose of about 2 Gy with 6 and 20 MeV electrons from a Linac, sup 6 sup 0 ...

  9. In situ, real-time thickness measurement techniques for bath-deposited CdS thin films on Cu(In,Ga)Se2

    International Nuclear Information System (INIS)

    Mann, Jonathan R.; Noufi, Rommel

    2012-01-01

    A technique has been developed that can measure the thickness of a 30–70 nm thin film of cadmium sulfide on a Cu(In,Ga)Se 2 substrate, in real time, as it grows in a chemical bath. The technique does not damage the film, and can be used to monitor batch depositions and roll-to-roll depositions with equal accuracy. The technique is based on reflectance spectroscopy through the chemical bath. - Highlights: ► Reflection spectra were collected during the chemical bath deposition of CdS. ► Two algorithms were generated to extract film thickness from each spectrum. ► Two conventional techniques were used to independently verify CdS film thicknesses. ► The accuracies of the algorithms are within 7% of the actual thicknesses. ► The algorithms offer in situ, real time thicknesses through the chemical bath.

  10. Annealing effects on the structural and optical properties of vanadium oxide film obtained by the hot-filament metal oxide deposition technique (HFMOD)

    Energy Technology Data Exchange (ETDEWEB)

    Scarminio, Jair; Silva, Paulo Rogerio Catarini da, E-mail: scarmini@uel.br, E-mail: prcsilva@uel.br [Universidade Estadual de Londrina (UEL), PR (Brazil). Departamento de Fisica; Gelamo, Rogerio Valentim, E-mail: rogelamo@gmail.com [Universidade Federal do Triangulo Mineiro (UFTM), Uberaba, MG (Brazil); Moraes, Mario Antonio Bica de, E-mail: bmoraes@mailhost.ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), SP (Brazil)

    2017-01-15

    Vanadium oxide films amorphous, nonstoichiometric and highly absorbing in the optical region were deposited on ITO-coated glass and on silicon substrates, by the hot-filament metal oxide deposition technique (HFMOD) and oxidized by ex-situ annealing in a furnace at 200, 300, 400 and 500 deg C, under an atmosphere of argon and rarefied oxygen. X-ray diffraction, Raman and Rutherford backscattering spectroscopy as well as optical transmission were employed to characterize the amorphous and annealed films. When annealed at 200 and 300 deg C the as-deposited opaque films become transparent but still amorphous. Under treatments at 400 and 500 deg C a crystalline nonstoichiometric V{sub 2}O{sub 5} structure is formed. All the annealed films became semiconducting, with their optical absorption coefficients changing with the annealing temperature. An optical gap of 2.25 eV was measured for the films annealed at 400 and 500 deg C. The annealing in rarefied oxygen atmosphere proved to be a useful and simple ex-situ method to modulate the structural and optical properties of vanadium oxide films deposited by HFMOD technique. This technique could be applied to other amorphous and non-absorbing oxide films, replacing the conventional and sometimes expensive method of modulate desirable film properties by controlling the film deposition parameters. Even more, the HFMOD technique can be an inexpensive alternative to deposit metal oxide films. (author)

  11. Raman Spectroscopy of Solid Oxide Fuel Cells: Technique Overview and Application to Carbon Deposition Analysis

    KAUST Repository

    Maher, R. C.

    2013-07-30

    Raman spectroscopy is a powerful characterization tool for improving the understanding of solid oxide fuel cells (SOFCs), capable of providing direct, molecularly specific information regarding the physical and chemical processes occurring within functional SOFCs in real time. In this paper we give a summary of the technique itself and highlight ex situ and in situ studies that are particularly relevant for SOFCs. This is followed by a case study of carbon formation on SOFC Ni-based anodes exposed to carbon monoxide (CO) using both ex situ and in situ Raman spectroscopy combined with computational simulations. In situ measurements clearly show that carbon formation is significantly reduced for polarized SOFCs compared to those held at open circuit potential (OCP). Ex situ Raman mapping of the surfaces showed clear variations in the rate of carbon formation across the surface of polarized anodes. Computational simulations describing the geometry of the cell showed that this is due to variations in gas access. These results demonstrate the ability of Raman spectroscopy in combination with traditional characterization tools, to provide detailed understanding of critical processes occurring within functional SOFCs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Mapping sediment deposite on tank FB-901 using neutron back scattering technique

    International Nuclear Information System (INIS)

    Wibisono; Sugiharto; Zulkifli Lubis; Phyu Phyu Aung Myint; Thin Moe Hlaing

    2016-01-01

    Tank FB-901 is storage tank for temporary material production with a diameter 11 m and a high 12 m. This tank has been use about 10 years so it is suspected there is sediment in it. Neutron back scattering technique has been used to detected the level of sediment inside so it can be seen the volume of liquid properly and avoid problem in the nozzle outlet. AmBe neutron source with activity one Curie shoot into the tank to enable back scattering intensity from material. Measurement using He-3 detector, radiation counter Ludlum model 2200 scaler ratemeter and mechanical motor controlled by computer. Investigation were taken at around the tank from the bottom to the top on each step 50 mm height 8000 mm. Scan determined the distance between 500 mm and measurement time 3 seconds to each sample point. Investigation found the sediment level average 1000 mm by 1500 mm highest and lowest level 100 mm. Fluctuating liquid level observed maximum of 7800 mm and average of 7000 mm. Cleaning tank advised to avoid blockage of the nozzle and material volume is measured accurately. (author)

  13. Raman Spectroscopy of Solid Oxide Fuel Cells: Technique Overview and Application to Carbon Deposition Analysis

    KAUST Repository

    Maher, R. C.; Duboviks, V.; Offer, G. J.; Kishimoto, M.; Brandon, N. P.; Cohen, L. F.

    2013-01-01

    Raman spectroscopy is a powerful characterization tool for improving the understanding of solid oxide fuel cells (SOFCs), capable of providing direct, molecularly specific information regarding the physical and chemical processes occurring within functional SOFCs in real time. In this paper we give a summary of the technique itself and highlight ex situ and in situ studies that are particularly relevant for SOFCs. This is followed by a case study of carbon formation on SOFC Ni-based anodes exposed to carbon monoxide (CO) using both ex situ and in situ Raman spectroscopy combined with computational simulations. In situ measurements clearly show that carbon formation is significantly reduced for polarized SOFCs compared to those held at open circuit potential (OCP). Ex situ Raman mapping of the surfaces showed clear variations in the rate of carbon formation across the surface of polarized anodes. Computational simulations describing the geometry of the cell showed that this is due to variations in gas access. These results demonstrate the ability of Raman spectroscopy in combination with traditional characterization tools, to provide detailed understanding of critical processes occurring within functional SOFCs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Geophysical techniques for exploration of concealed uranium deposits in the Gwalior basin

    International Nuclear Information System (INIS)

    Choudhary, Kalpan; Singh, R.B.

    2004-01-01

    There is no direct geophysical method for the exploration of concealed uranium ore. Scope of geophysics for this in the Gwalior basin comprises delineating the basement topography, demarcation or zones of intense fracturing intersecting the unconformities and to identify the presence of carbonaceous rocks, specially in the graben-like structures. These geophysical problems have been successfully solved in other places by employing IP, resistivity, SP and gravity techniques for basement mapping, identification of fracture zone/shear zone, delineation of electrical conductors like carbonaceous rocks and sulphides. Three such case histories are presented here that include: a). basement and shear/fracture zone mapping in the Vindhyan basin north of Son-Narmada lineament, b). delineation of conductive zone (proved to be carbon phyllite) in the Mahakoshal Group of Kanhara area of Sonbhadra district, UP and c). Identification of a conductive zone, proved to be sulphide body, within the Mahakoshal group in the Gurharpahar area of Sidhi and Sonbhadra districts of MP and UP respectively. In the context of exploration for concealed uranium in the Gwalior basin, it is suggested to employ IP, resistivity, SP, gravity and magnetic methods for delineation of conductive zones like carbonaceous rocks, basement topography, including the graben like structures, fracture zone, geological boundaries and demarcation of the basin boundary. (author)

  15. Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers

    NARCIS (Netherlands)

    Starostin, S. A.; Keuning, W.; Schalken, J.; Creatore, M.; Kessels, W. M. M.; Bouwstra, J. B.; van de Sanden, M. C. M.; de Vries, H. W.

    2016-01-01

    The synergy between fast (1600 nm · min−1), roll-to-roll plasma-enhanced chemical vapor deposited (PE-CVD) SiO2 layers and plasma-assisted atomic layer deposited (PA-ALD) ultra-thin Al2O3 films has been investigated in terms of moisture permeation barrier properties. The effective and intrinsic

  16. Synergy between plasma-assisted ALD and roll-to-roll atmospheric pressure PE-CVD processing of moisture barrier films on polymers

    NARCIS (Netherlands)

    Starostin, S.A.; Keuning, W.; Schalken, J.R.G.; Creatore, M.; Kessels, W.M.M.; Bouwstra, J.B.; Sanden, van de M.C.M.; Vries, de H.W.

    2016-01-01

    The synergy between fast (1600 nm · min−1), roll-to-roll plasma-enhanced chemical vapor deposited (PE-CVD) SiO2 layers and plasma-assisted atomic layer deposited (PA-ALD) ultra-thin Al2O3 films has been investigated in terms of moisture permeation barrier properties. The effective and intrinsic

  17. pplication of Fractal Technique for Analysis of Geophysical - Geochemical Databases in Tekieh Pb-Zn Ore Deposit (SE of Arak

    Directory of Open Access Journals (Sweden)

    Seyed Reza Mehrnia

    2017-02-01

    Full Text Available Introduction Tekieh Lead-Zinc ore deposit that is located in the Sanandaj-Sirjan structural zone has been recognized as one of the most important mineralized regions in Malayer-Isfahan metallogenic sub-state, south east of Arak (Momenzadeh and Ziseman, 1981. Carbonate host units have been developed along (or across the Vishan-Tekieh anticline as the main structure extended in NW-SE trends (Annells et al, 1985. According to geochemical investigations (Salehi, 2004, the element content of the mineralized regions has originated from Alpine post-volcanisms and subsequently it has migrated toward early Cretaceous formations (dolomitic limestones among several hypogenic stages (Torkashvand et a.2009. Also echelon type structures consisting of folded systems and inversed faulting of structures are the most common features in western and eastern parts of ore deposit regions (Annells et al, 1985. Syngenetic enrichments beside limited (rarely developed epigenetic mineralization have been known as two main phases which are closely relevant to ore forming processes in the massive lenses and vein type occurrences, respectively (Momenzadeh and Ziseman, 1981. Material and Methods In this research, two statistical techniques that consist of classical and fractal equations (Mandelbrot, 2005 were applied in geochemical (Torkashvand et al., 2009 and geophysical (Jafari, 2007 databases for obtaining the linear and nonlinear distributions of geochemical elements (Tekieh Pb-Zn content in association with resistivity variations and induction polarization measurements (Calagari, 2010. According to linear statistical techniques (Torkashvand et al., 2009, the main central parameters such as mean, median and mode in addition to variances and standard deviations as distribution tendencies could be used for obtaining the regression coefficients of the databases. However, in fractal statistics, a reliable regression between geoelectrical - geochemical anomalies should be

  18. Thermoluminescent properties of CVD diamond: applications to ionising radiation dosimetry; Proprietes thermoluminescentes du diamant CVD: applications a la dosimetrie des rayonnements ionisants

    Energy Technology Data Exchange (ETDEWEB)

    Petitfils, A

    2007-09-15

    Remarkable properties of synthetic diamond (human soft tissue equivalence, chemical stability, non-toxicity) make this material suitable for medical application as thermoluminescent dosimeter (TLD). This work highlights the interest of this material as radiotherapy TLD. In the first stage of this work, we looked after thermoluminescent (TL) and dosimetric properties of polycrystalline diamond made by Chemically Vapor Deposited (CVD) synthesis. Dosimetric characteristics are satisfactory as TLD for medical application. Luminescence thermal quenching on diamond has been investigated. This phenomenon leads to a decrease of dosimetric TL peak sensitivity when the heating rate increases. The second part of this work analyses the use of synthetic diamond as TLD in radiotherapy. Dose profiles, depth dose distributions and the cartography of an electron beam obtained with our samples are in very good agreement with results from an ionisation chamber. It is clearly shown that CVD) diamond is of interest to check beams of treatment accelerators. The use of these samples in a control of treatment with Intensity Modulated Radiation Therapy underlines good response of synthetic diamond in high dose gradient areas. These results indicate that CVD diamond is a promising material for radiotherapy dosimetry. (author)

  19. Synthesis of carbon nanotubes from palm oil on stacking and non-stacking substrate by thermal-CVD method

    Science.gov (United States)

    Robaiah, M.; Rusop, M.; Abdullah, S.; Khusaimi, Z.; Azhan, H.; Fadzlinatul, M. Y.; Salifairus, M. J.; Asli, N. A.

    2018-05-01

    Palm oil has been used as the carbon source to synthesize carbon nanotubes (CNTs) on silicon substrates using the thermal chemical vapor deposition (CVD) method. Meanwhile, silicon has been applied using two techniques, which are stacked technique and non-stacked technique. The CNTs were grown at the constant time of 30 minutes with various synthesis temperatures of 750 °C, 850 °C and 950 °C. The CNTs were characterized using micro-Raman spectroscopy and field emission scanning electron microscopy (FESEM). It was found that the density, growth rate, diameter and length of the CNTs produced were affected by the synthesis temperature. Moreover, the structure slightly changes were observed between CNTs obtained in SS and NSS. The synthesize temperature of 750 °C was considered as the suitable temperature for the production of CNTs due to low ID/IG ratio, which for stacked is 0.89 and non-stacked are 0.90. The possible explanation for the different morphology of the produced CNTs was also discussed.

  20. A CVD diamond beam telescope for charged particle tracking

    CERN Document Server

    Adam, W; Bergonzo, P; de Boer, Wim; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Dulinski, W; Doroshenko, J; Doucet, M; van Eijk, B; Fallou, A; Fischer, P; Fizzotti, F; Kania, D R; Gan, K K; Grigoriev, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kaplon, J; Kass, R; Keil, M; Knöpfle, K T; Koeth, T W; Krammer, Manfred; Meuser, S; Lo Giudice, A; MacLynne, L; Manfredotti, C; Meier, D; Menichelli, D; Mishina, M; Moroni, L; Noomen, J; Oh, A; Pan, L S; Pernicka, Manfred; Perera, L P; Riester, J L; Roe, S; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Trischuk, W; Tromson, D; Vittone, E; Weilhammer, Peter; Wermes, N; Wetstein, M; Zeuner, W; Zöller, M

    2002-01-01

    CVD diamond is a radiation hard sensor material which may be used for charged particle tracking near the interaction region in experiments at high luminosity colliders. The goal of the work described here is to investigate the use of several detector planes made of CVD diamond strip sensors for charged particle tracking. Towards this end a tracking telescope composed entirely of CVD diamond planes has been constructed. The telescope was tested in muon beams and its tracking capability has been investigated.

  1. Clean and polymer-free transfer of CVD-grown graphene films on hexagonal boron nitride substrates

    Science.gov (United States)

    Fujihara, Miho; Ogawa, Shun; Yoshimura, Shintaro; Inoue, Ryosuke; Maniwa, Yutaka; Taniguchi, Takashi; Watanabe, Kenji; Shinohara, Hisanori; Miyata, Yasumitsu

    2017-05-01

    This report describes the development of a solution-assisted, polymer-free transfer method and the characterization of chemical vapor deposition (CVD)-grown graphene on hexagonal boron nitride. Raman analysis reveals that polymer-free samples have small variations in G- and 2D-mode Raman frequencies and are minimally affected by charge doping as observed for clean exfoliated graphene. Electrical measurements indicate that charge doping, hysteresis, and carrier scattering are suppressed in polymer-free samples. The results demonstrate that this method provides a simple and effective way to prepare clean heterostructures of CVD-grown, large-area graphene and other two-dimensional materials.

  2. Trends of atmospheric deposition of trace elements in Macedonia studied by the moss biomonitoring technique.

    Science.gov (United States)

    Barandovski, Lambe; Frontasyeva, Marina V; Stafilov, Trajče; Sajn, Robert; Pavlov, Sergey; Enimiteva, Vangelica

    2012-01-01

    In 2002 and 2005 the moss biomonitoring technique was applied to air pollution studies in the Republic of Macedonia in the framework of the International Cooperative Programme on Effects of Air Pollution on Natural Vegetation and Crops under the auspices of the United Nations Economic Commission for Europe (UNECE-ICP Vegetation) Convention on Long-Range Transboundary Air Pollution (LRTAP). In August 2005 samples of the terrestrial mosses Homolothecium lutescens and Hypnum cupressiforme were collected at 72 sites evenly distributed over the territory of the country, in accordance with the sampling strategy of the European moss survey programme. A total of 41 elements (Na, Mg, Al, Cl, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, As, Se, Br, Rb, Sr, Zr, Mo, Cd, Sb, I, Cs, Ba, La, Ce, Sm, Eu, Tb, Dy Hf, Ta, W, Hg, Pb, Th, and U) were determined by instrumental epithermal neutron activation analysis and atomic absorption spectrometry. Principal component analysis was used to identify and characterize different pollution sources. Distributional maps were prepared to point out the regions most affected by pollution and to relate this to known sources of contamination. A few areas, as in 2002, are experiencing particular environmental stress: Veles, Skopje, Tetovo, Radoviš and Kavadarci-Negotino, whereas the agricultural regions in the south, south-west, and south-east show median European values for most elements of mainly pollution origin. A significant increase in the content of Ni is noticed in the 2005 moss survey compared with 2002, due to the increased production of the ferro-nickel smelter in Kavadarci. A higher content of Cd, Hg, and Pb in 2005 relative to 2002 can be explained by pollution from the lead-zinc smelter in Veles, as well as the pollution that comes from the open slag waste dump of this smelter. Protection activities on the dump of slag from the former ferrochromium smelter located near Tetovo resulted in a lower content of Cr in the 2005 moss

  3. Application of CVD diamond film for radiation detection

    International Nuclear Information System (INIS)

    Zhou Haiyang; Zhu Xiaodong; Zhan Rujuan

    2005-01-01

    With the development of diamond synthesis at low pressure, the CVD diamond properties including electronic characteristics have improved continuously. Now the fabrication of electronic devices based on the CVD diamond has been one of hot research subjects in this field. Due to many unique advantages, such as high signal-noise ratio, fast time response, and normal output in extremely harsh surrounding, the CVD diamond radiation detector has attracted more and more interest. In this paper, we have reviewed the development and status of the CVD diamond radiation detector. The prospect of this detector is described. (authors)

  4. Photoluminescence of nc-Si:Er thin films obtained by physical and chemical vapour deposition techniques: The effects of microstructure and chemical composition

    Energy Technology Data Exchange (ETDEWEB)

    Cerqueira, M.F., E-mail: fcerqueira@fisica.uminho.p [Departamento de Fisica, Universidade do Minho, Campus de Gualtar 4710-057 Braga (Portugal); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, Via Orabona n.4-70126 Bari (Italy); Stepikhova, M. [Institute for Physics of Microstructures RAS, 603600 Nizhnij Novgorod GSP-105 (Russian Federation); Alpuim, P.; Andres, G. [Departamento de Fisica, Universidade do Minho, Campus de Gualtar 4710-057 Braga (Portugal); Kozanecki, A. [Polish Academy of Sciences, Institute of Physics, PL-02668, Warsaw (Poland); Soares, M.J.; Peres, M. [Departamento de Fisica, Universidade de Aveiro, Campus de Santiago, 3700 Aveiro (Portugal)

    2009-08-31

    Erbium doped nanocrystalline silicon (nc-Si:Er) thin films were produced by reactive magnetron rf sputtering and by Er ion implantation into chemical vapor deposited Si films. The structure and chemical composition of films obtained by the two approaches were studied by micro-Raman scattering, spectroscopic ellipsometry and Rutherford backscattering techniques. Variation of deposition parameters was used to deposit films with different crystalline fraction and crystallite size. Photoluminescence measurements revealed a correlation between film microstructure and the Er{sup 3+} photoluminescence efficiency.

  5. Study of Sb/SnO{sub 2} bi-layer films prepared by ion beam sputtering deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chun-Min [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Chun-Chieh [Department of Electrical Engineering, Cheng Shiu University, No. 840, Chengcing Road, Niaosong Township, Kaohsiung 833, Taiwan, ROC (China); Kuo, Jui-Chao [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Huang, Jow-Lay, E-mail: jlh888@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC (China); Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

    2014-11-03

    In the present work, bi-layer thin films of Sb/SnO{sub 2} were produced on unheated glass substrates using ion beam sputtering (IBS) technique without post annealing treatment. The thickness of Sb layers was varied from 2 to 10 nm and the Sb layers were deposited on SnO{sub 2} layers having thicknesses of 40 nm to 115 nm. The effect of thickness was studied on the morphological, electrical and optical properties. The Sb/SnO{sub 2} bi-layer resulted in lowering the electrical resistivity as well as reducing the optical transmittance. However, the optical and electrical properties of the bi-layer films were mainly influenced by the thickness of Sb layers due to progressive transfer in structures from aggregate to continuous films. The bi-layer films show the electrical resistivity of 1.4 × 10{sup −3} Ω cm and an optical transmittance of 26% for Sb film having 10 nm thickness. - Highlights: • Bi-layer Sb/SnO{sub 2} structures were synthesized by ion beam sputtering (IBS) technique. • The 6 nm-thick Sb film is a transition region in this study. • The conductivity of the bi-layer films is increased as Sb thickness increases. • The transmittance of the bi-layer films is decreased as Sb thickness increases.

  6. The Effect of Annealing at 15000C on Migration and Release of Ion Implanted Silver in CVD Silicon Carbide

    International Nuclear Information System (INIS)

    HJ MacLean; RG Ballinger; LE Kolaya; SA Simonson; N Lewis; M Hanson

    2004-01-01

    The transport of silver in CVD β-SiC has been studied using ion implantation. Silver ions were implanted in β-SiC using the ATLAS accelerator facility at the Argonne National Laboratory. Ion beams with energies of 93 and 161 MeV were used to achieve deposition with peak concentrations at depths of approximately 9 and 13 (micro)m, respectively. As-implanted samples were then annealed at 1500 C for 210 or 480 hours. XPS, SEM, TEM, STEM, and optical methods were used to analyze the material before and after annealing. Silver concentration profiles were determined using XPS before and after annealing. STEM and SEM equipped with quantitative chemical analysis capability were used to more fully characterize the location and morphology of the silver before and after annealing. The results show that, within the uncertainty of measurement techniques, there is no silver migration, via either inter- or intragrannular paths, for the times and temperature studied. Additionally, the silver was observed to phase separate within the SiC after annealing. The irradiation damage from the implantation process resulted in a three-layer morphology in the as-implanted condition: (1) a layer of unaltered SiC, followed by (2) a layer of crystallized SiC, followed by (3) an amorphized layer which contained essentially all of the implanted silver. After annealing the layer structure changed. Layer 1 was unaltered. The grains in layer 2 recrystallized to form an epitaxial (columnar) layer. Layer 3 recrystallized to form a fine grain equiaxed layer. The results of this work do not support the long held assumption that silver release from CVD SiC, used for gas-reactor coated particle fuel, is dominated by grain boundary diffusion

  7. CVD diamond detectors for ionizing radiation

    CERN Document Server

    Friedl, M; Bauer, C; Berfermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernegger, H; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Tapper, R J; Tesarek, R J; Thomson, G B; Trawick, M L; Trischuk, W; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Ziock, H J; Zöller, M

    1999-01-01

    In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2*4 cm/sup 2/ have been grown and refined for better charge collection properties, which are measured with a beta source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5*10/sup 15/ cm/sup -2/ to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (16 refs).

  8. CVD diamond sensors for charged particle detection

    CERN Document Server

    Krammer, Manfred; Berdermann, E; Bergonzo, P; Bertuccio, G; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; D'Angelo, P; Dabrowski, W; Delpierre, P A; Dencuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Hallewell, G D; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Kass, R; Koeth, T W; Lo Giudice, A; Lü, R; MacLynne, L; Manfredotti, C; Meier, D; Mishina, M; Moroni, L; Oh, A; Pan, L S; Pernicka, Manfred; Peitz, A; Perera, L P; Pirollo, S; Procario, M; Riester, J L; Roe, S; Rousseau, L; Rudge, A; Russ, J; Sala, S; Sampietro, M; Schnetzer, S; Sciortino, S; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R; Trischuk, W; Tromson, D; Vittone, E; Walsh, A M; Wedenig, R; Weilhammer, Peter; Wetstein, M; White, C; Zeuner, W; Zöller, M

    2001-01-01

    CVD diamond material was used to build position-sensitive detectors for single-charged particles to be employed in high-intensity physics experiments. To obtain position information, metal contacts shaped as strips or pixels are applied to the detector surface for one- or two- dimensional coordinate measurement. Strip detectors 2*4 cm/sup 2/ in size with a strip distance of 50 mu m were tested. Pixel detectors of various pixel sizes were bump bonded to electronics chips and investigated. A key issue for the use of these sensors in high intensity experiments is the radiation hardness. Several irradiation experiments were carried out with pions, protons and neutrons exceeding a fluence of 10/sup 15/ particles/cm/sup 2/. The paper presents an overview of the results obtained with strip and pixel detectors in high-energy test beams and summarises the irradiation studies. (8 refs).

  9. CVD diamond detectors for ionizing radiation

    Energy Technology Data Exchange (ETDEWEB)

    Friedl, M. E-mail: markus.friedl@cern.ch; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R.J.; Tesarek, R.; Thomson, G.B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M

    1999-10-01

    In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2x4 cm{sup 2} have been grown and refined for better charge collection properties, which are measured with a {beta} source or in a test beam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5x10{sup 15} cm{sup -2} to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics. (author)

  10. CVD diamond detectors for ionizing radiation

    Science.gov (United States)

    Friedl, M.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

    1999-10-01

    In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2×4 cm2 have been grown and refined for better charge collection properties, which are measured with a β source or in a testbeam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5×10 15 cm-2 to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics.

  11. Diameter Tuning of Single-Walled Carbon Nanotubes by Diffusion Plasma CVD

    Directory of Open Access Journals (Sweden)

    Toshiaki Kato

    2011-01-01

    Full Text Available We have realized a diameter tuning of single-walled carbon nanotubes (SWNTs by adjusting process gas pressures with plasma chemical vapor deposition (CVD. Detailed photoluminescence measurements reveal that the diameter distribution of SWNTs clearly shifts to a large-diameter region with an increase in the pressure during plasma CVD, which is also confirmed by Raman scattering spectroscopy. Based on the systematical investigation, it is found that the main diameter of SWNTs is determined by the pressure during the heating in an atmosphere of hydrogen and the diameter distribution is narrowed by adjusting the pressure during the plasma generation. Our results could contribute to an application of SWNTs to high-performance thin-film transistors, which requires the diameter-controlled semiconductor-rich SWNTs.

  12. Plasma CVD reactor with two-microwave oscillators for diamond film synthesis

    International Nuclear Information System (INIS)

    Nagatsu, M.; Miyake, M.; Maeda, J.

    2006-01-01

    In this study, we present the experimental results of a new type of microwave plasma CVD system, where two of 1.5 kW microwave sources were used for enlarging the plasma discharge and the diamond film growth. One of the microwave oscillators was used to produce the microwave plasma as in the conventional microwave plasma CVD device, while the second one was used to enlarge the plasma by introducing microwave from the launcher mounted at the substrate stage. We demonstrated the enlargement of plasma discharge area from 60 mm to 100 mm in diameter by using the two-microwave oscillators system. Characteristics of diamond films deposited using H 2 /CH 4 plasmas were also investigated using a scanning electron microscope (SEM) and Raman spectroscopy

  13. Characterization of Ultra thin chromium layers deposited ou to SiO2 using the Le-PIXE and the RB S techniques

    International Nuclear Information System (INIS)

    Zahraman, K.; Nsouli, B.; Roumie, M.

    2007-01-01

    In this paper, we demonstrate the ability of the Le-PIXE (Low Energy PIXE) technique, using proton energies < 1 MeV, for the monitoring of the thickness and the thickness uniformity of ultra thin (0.5 nm < t < 20 nm) chromium layers deposited onto quartz substrates. Chromium is a good candidate for obtaining conductive ultra thin layers on insulator substrates such as quartz (SiO2). The resistivity of such layers is highly related to the quality of the deposited chromium film. In order to optimize the deposition process, there is a need for rapid and accurate monitoring of such films (film thickness, thickness uniformity over a big surface...). The acquisition time needed to obtain results with less than 3-4 % precision was 5 minutes for the thinnest layers. The validation for the use of the Le-PIXE technique was checked by means of conventional RB S technique.

  14. Premature menopause linked to CVD and osteoporosis.

    Science.gov (United States)

    Park, Claire; Overton, Caroline

    2010-03-01

    Premature menopause affects 1% of women under the age of 40, the usual age of the menopause is 51. Most women will present with irregular periods or no periods at all with or without climacteric symptoms. Around 10% of women present with primary amenorrhoea. A careful history and examination are required. It is important to ask specifically about previous chemotherapy or radiotherapy and to look for signs of androgen excess e.g. polycystic ovarian syndrome, adrenal problems e.g. galactorrhoea and thyroid goitres. Once pregnancy has been excluded, a progestagen challenge test can be performed in primary care. Norethisterone 5 mg tds po for ten days or alternatively medroxyprogesterone acetate 10 mg daily for ten days is prescribed. A withdrawal bleed within a few days of stopping the norethisterone indicates the presence of oestrogen and bleeding more than a few drops is considered a positive withdrawal bleed. The absence of a bleed indicates low levels of oestrogen, putting the woman at risk of CVD and osteoporosis. FSH levels above 30 IU/l are an indicator that the ovaries are failing and the menopause is approaching or has occurred. It should be remembered that FSH levels fluctuate during the month and from one month to the next, so a minimum of two measurements should be made at least four to six weeks apart. The presence of a bleed should not exclude premature menopause as part of the differential diagnosis as there can be varying and unpredictable ovarian function remaining. The progestagen challenge test should not be used alone, but in conjunction with FSH, LH and oestradiol. There is no treatment for premature menopause. Women desiring pregnancy should be referred to a fertility clinic and discussion of egg donation. Women not wishing to become pregnant should be prescribed HRT until the age of 50 to control symptoms of oestrogen deficiency and reduce the risks of osteoporosis and CVD.

  15. TiO2 anatase thin films deposited by spray pyrolysis of an aerosol of titanium diisopropoxide

    International Nuclear Information System (INIS)

    Conde-Gallardo, A.; Guerrero, M.; Castillo, N.; Soto, A.B.; Fragoso, R.; Cabanas-Moreno, J.G.

    2005-01-01

    Titanium dioxide thin films were deposited on crystalline silicon (100) and fused quartz substrates by spray pyrolysis (SP) of an aerosol, generated ultrasonically, of titanium diisopropoxide. The evolution of the crystallization, studied by X-ray diffraction (XRD), atomic force (AFM) and scanning electron microscopy (SEM), reflection and transmission spectroscopies, shows that the deposition process is nearly close to the classical chemical vapor deposition (CVD) technique, producing films with smooth surface and good crystalline properties. At deposition temperatures below 400 deg. C, the films grow in amorphous phase with a flat surface (roughness∼0.5 nm); while for equal or higher values to this temperature, the films develop a crystalline phase corresponding to the TiO 2 anatase phase and the surface roughness is increased. After annealing at 750 deg. C, the samples deposited on Si show a transition to the rutile phase oriented in (111) direction, while for those films deposited on fused quartz no phase transition is observed

  16. The effects of H sub 2 addition on the enhanced deposition rate and high quality Cu films by MOCVD

    CERN Document Server

    Lee, J H; Park, S J; Choi, S Y

    1998-01-01

    High-quality Cu thin films were deposited on the TiN/Si substrate from the hexafluoroacetylacetonate Copper thrmethylvinylsilane [Cu (hfac) (tmvs)] source using a metal organic chemical vapor deposition (MOCVD) technique. The optimum deposition condition is with a substrate temperature of 200 .deg. C and the hydrogen flow rate of 80 sccm. The deposition rate, electrical resistivity, surface morphology, grain size, and optical properties of the deposited Cu films were investigated by the AES, four-point probe, SEM, XRD, and the visible spectrophotometer as a function of hydrogen gas flow rate, The results indicated that additional hydrogen gas affects the CVD hydrogen reduction reaction improving the purity, deposition rate, and electrical resistivity of Cu thin films. A prospective idea will be discussed for the preparation of Cu thin films showing a more enhanced electromigration resistance applicable to the next-generation interconnection.

  17. Prototyping of radially oriented piezoelectric ceramic-polymer tube composites using fused deposition and lost mold processing techniques

    Science.gov (United States)

    McNulty, Thomas Francis

    Piezoelectric tube composite hydrophones of 3-1, 3-2, and 2-2 connectivity were developed using Fused Deposition (FD) and lost mold processing (LMP). In this work, a new series of thermoplastic binder formulations, named the ECG series, were developed for the FD process. The ECG-9 formulation exhibits mechanical, thermal, and rheological properties suitable for the Fused Deposition of functional lead zirconate titanate ceramic devices. This binder consists of 100 parts (by weight) Vestoplast 408, 20 parts Escorez 2520, 15 parts Vestowax A-227, and 5 parts Indopol H-1500. Oleic acid, oleyl alcohol, stearic acid, and stearyl alcohol (in toluene) were tested for use as a dispersant in the PZT/ECG-9 system. It was found that stearic acid adsorbs the most onto PZT powder, adsorbing 8.1 mg/m2. Using stearic acid, solutions of increasing concentration (5.0--50.0 g/l) were measured for adsorption. It was found that 30.0 g/l is the minimum concentration necessary for optimum surface coverage. The surfactant-coated powder was compounded with ECG-9 binder to create a 54 vol.% mix. The mix was extruded using a single screw extrusion apparatus into continuous lengths (>30 m) of 1.78 mm diameter filament. Fused Deposition was used to create composite designs of 3-1, 3-2, and 2-2 connectivity. After sintering, samples exhibit a sintered density greater than 97%. Sanders Prototyping (SPI) was used to manufacture molds for use with LMP techniques. Molds of 3-1, 3-2, and 2-2 connectivity were developed. The molds were infiltrated with a 55 vol.% aqueous based PZT slurry. The parts were subjected to a binder decomposition cycle, followed by sintering. Resultant samples were highly variable due to random macro-pores present in the samples after sintering. The resultant preforms were embedded in epoxy, and polished to dimensions of 8.0 mm inside diameter (ID), 14.0 mm outside diameter (OD), and 10.0 mm length (l) the OD and l dimensions are accurate to +/--2%, while the ID is accurate

  18. A comparative study of the thermoluminescent response to beta irradiation of CVD diamond and LiF dosimeters

    Energy Technology Data Exchange (ETDEWEB)

    Bogani, F. [Florence Univ. (Italy). Dipt. di Energetica; Borchi, E. [Florence Univ. (Italy). Dipt. di Energetica; Bruzzi, M. [Florence Univ. (Italy). Dipt. di Energetica; Leroy, C. [Florence Univ. (Italy). Dipt. di Energetica; Sciortino, S. [Florence Univ. (Italy). Dipt. di Energetica

    1997-04-01

    The thermoluminescent (TL) response of chemical vapour deposited (CVD) diamond films to beta irradiation has been investigated. A numerical curve-fitting procedure, calibrated by means of a set of LiF TLD100 experimental spectra, has been developed to deconvolute the complex structured TL glow curves. The values of the activation energy and of the frequency factor related to each of the TL peaks involved have been determined. The TL response of the CVD diamond films to beta irradiation has been compared with the TL response of a set of LiF TLD100 and TLD700 dosimeters. The results have been discussed and compared in view of an assessment of the efficiency of CVD diamond films in future applications as in vivo dosimeters. (orig.).

  19. A comparative study of the thermoluminescent response to beta irradiation of CVD diamond and LiF dosimeters

    Science.gov (United States)

    Bogani, F.; Borchi, E.; Bruzzi, M.; Leroy, C.; Sciortino, S.

    1997-02-01

    The thermoluminescent (TL) response of Chemical Vapour Deposited (CVD) diamond films to beta irradiation has been investigated. A numerical curve-fitting procedure, calibrated by means of a set of LiF TLD100 experimental spectra, has been developed to deconvolute the complex structured TL glow curves. The values of the activation energy and of the frequency factor related to each of the TL peaks involved have been determined. The TL response of the CVD diamond films to beta irradiation has been compared with the TL response of a set of LiF TLD100 and TLD700 dosimeters. The results have been discussed and compared in view of an assessment of the efficiency of CVD diamond films in future applications as in vivo dosimeters.

  20. A comparative study of the thermoluminescent response to beta irradiation of CVD diamond and LiF dosimeters

    International Nuclear Information System (INIS)

    Bogani, F.; Borchi, E.; Bruzzi, M.; Leroy, C.; Sciortino, S.

    1997-01-01

    The thermoluminescent (TL) response of chemical vapour deposited (CVD) diamond films to beta irradiation has been investigated. A numerical curve-fitting procedure, calibrated by means of a set of LiF TLD100 experimental spectra, has been developed to deconvolute the complex structured TL glow curves. The values of the activation energy and of the frequency factor related to each of the TL peaks involved have been determined. The TL response of the CVD diamond films to beta irradiation has been compared with the TL response of a set of LiF TLD100 and TLD700 dosimeters. The results have been discussed and compared in view of an assessment of the efficiency of CVD diamond films in future applications as in vivo dosimeters. (orig.)