Granite-related Yangjiashan tungsten deposit, southern China

Science.gov (United States)

Xie, Guiqing; Mao, Jingwen; Li, Wei; Fu, Bin; Zhang, Zhiyuan

2018-04-01

The Yangjiashan scheelite-bearing deposit (38,663 metric tons of WO3 with an average ore grade of 0.70% WO3) is hosted in quartz veins in a biotite monzogranite intrusion and surrounding slate in the Xiangzhong Metallogenic Province of southern China. The monzogranite has a zircon SHRIMP U-Pb age of 406.6 ± 2.8 Ma (2σ, n = 20, MSWD = 1.4). Cassiterite coexisting with scheelite yields a weighted mean 206Pb/238U age of 409.8 ± 5.9 Ma (2σ, n = 30, MSWD = 0.20), and molybdenite intergrown with scheelite yields a weighted mean Re-Os age of 404.2 ± 3.2 Ma (2σ, n = 3, MSWD = 0.10). These results suggest that the Yangjiashan tungsten deposit is temporally related to the Devonian intrusion. The δD and calculated δ18OH2O values of quartz intergrown with scheelite range from - 87 to - 68‰, and - 1.2 to 3.4‰, respectively. Sulfides have a narrow range of δ34S values of - 2.9 to - 0.7‰ with an average value of - 1.6‰ (n = 16). The integration of geological, stable isotope, and geochronological data, combined with the quartz-muscovite greisen style of ore, supports a magmatic-hydrothermal origin for the tungsten mineralization. Compared to the more common tungsten skarn, quartz-wolframite vein, and porphyry tungsten deposits, as well as orogenic gold deposits worldwide, the Yangjiashan tungsten deposit is an unusual example of a granite-related, gold-poor, scheelite-bearing quartz vein type of deposit. The calcium needed for the formation of scheelite is derived from the sericitization of calcic plagioclase in the monzogranite and Ca-bearing psammitic country rocks, and the relatively high pH, reduced and Ca-rich mineralizing fluid may be the main reasons for the formation of scheelite rather than wolframite at Yangjiashan.

Preparation and characterization of tempered tungsten layers on single crystalline silicon

International Nuclear Information System (INIS)

Nitzsche, K.; Knedlik, C.; Tippmann, H.; Spiess, L.; Harman, R.; Vanek, O.; Tvarozek, V.

1984-01-01

Tungsten layers have been deposited on single crystalline silicon by sputtering and characterized by measurements of the sheet resistance by a linear four point method and the van der Pauw method. The influence of tempering under argon on the resistance has been studied. By means of the RBS spectroscopy it was found that the increase in the specific resistance is caused by interdiffusion

Selective tungsten deposition in a batch cold wall CVD system

International Nuclear Information System (INIS)

Chow, R.; Kang, S.; Harshbarger, W.R.; Susoeff, M.

1987-01-01

Selective deposition of tungsten offers many advantages for VLSI technology. The process can be used as a planarization technique for multilevel interconnect technology, it can be used to fill contacts and to provide a barrier layer between Al and Si materials, and the selective W process might be used as a self-aligned technology to provide low resistance layers on source/drain and gate conductors. Recent publications have indicate that cold wall CVD systems provide advantages for development of selective W process. Genus has investigated selective W deposition processing, and we have developed a selective W deposition process for the Genus 8402 multifilm deposition system. This paper describes the Genus 8402 system and the selective W process developed in this reactor. To further develop selective W technology, Genus has signed an agreement with General Electric establishing a joint development program. As a part of this program, the authors characterized the selective W process for encroachment, Si consumption and degrees of selectivity on various dielectrics. The status of this development activity and process characterization is reviewed in this paper

Formation of carbon containing layers on tungsten test limiters

International Nuclear Information System (INIS)

Rubel, M.; Philipps, V.; Huber, A.; Tanabe, T.

1999-01-01

Tungsten test limiters of mushroom shape and a plasma facing area of approximately 100 cm 2 were exposed at the TEXTOR-94 tokamak to a number of deuterium fuelled discharges performed under various operation conditions. Two types of limiters were tested: a sole tungsten limiter and a twin limiter consisting of two halves, one made of tungsten and another of graphite. The exposed surfaces were examined with ion beam analysis methods and laser profilometry. The formation of some deposition zones was observed near the edges of the limiters. The deuterium-to-carbon concentration ratio was in the range from 0.04 to 0.11 and around 0.2 for the sole tungsten and the twin limiter, respectively. Significant amounts of the co-deposited tungsten and silicon atoms were found on the graphite part of the twin limiter indicating the formation of mixed W-C-Si compounds. (orig.)

Impact of residual by-products from tungsten film deposition on process integration due to nonuniformity of the tungsten film

CERN Document Server

Sidhwa, A; Gandy, T; Melosky, S; Brown, W; Ang, S; Naseem, H; Ulrich, R

2002-01-01

The effects of residual by products from a tungsten film deposition process and their impact on process integration due to the nonuniformity of the tungsten film were investigated in this work. The tungsten film deposition process involves three steps: nucleation, stabilization, and tungsten bulk fill. Six experiments were conducted in search for a solution to the problem. The resulting data suggest that excess nitrogen left in the chamber following the tungsten nucleation step, along with residual by products, causes a shift in the tungsten film uniformity during the tungsten bulk fill process. Data reveal that, due to the residual by products, an abnormal grain growth occurs causing a variation in the tungsten thickness across the wafer during the bulk fill step. Although several possible solutions were revealed by the experiments, potential integration problems limited the acceptable solutions to one. The solution chosen was the introduction of a 10 s pumpdown immediately following the nucleation step. Thi...

Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition

International Nuclear Information System (INIS)

Sharma, Uttam; Chauhan, Sachin S; Sharma, Jayshree; Sanyasi, A K; Ghosh, J; Choudhary, K K; Ghosh, S K

2016-01-01

The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m 2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS. (paper)

Characterization of thin film deposits on tungsten filaments in catalytic chemical vapor deposition using 1,1-dimethylsilacyclobutane

Energy Technology Data Exchange (ETDEWEB)

Shi, Yujun, E-mail: shiy@ucalgary.ca; Tong, Ling; Mulmi, Suresh [Department of Chemistry, University of Calgary, Calgary, Alberta T2N 1N4 (Canada)

2016-09-15

Metal filament plays a key role in the technique of catalytic chemical vapor deposition (Cat-CVD) as it serves as a catalyst in dissociating the source gas to form reactive species. These reactive species initiate the gas-phase reaction chemistry and final thin film and nanostructure formation. At the same time, they also react with the metal itself, leading to the formation of metal alloys and other deposits. The deposits on the tungsten filaments when exposed to 1,1-dimethylsilacyclobutane (DMSCB), a single-source precursor for silicon carbide thin films, in the process of Cat-CVD were studied in this work. It has been demonstrated that a rich variety of deposits, including tungsten carbides (W{sub 2}C and WC), tungsten silicide (W{sub 5}Si{sub 3}), silicon carbide, amorphous carbon, and graphite, form on the W filament surfaces. The structural and morphological changes in the tungsten filaments depend strongly on the DMSCB pressure and filament temperature. At 1000 and 2000 °C, the formation of WC and W{sub 2}C dominates. In addition, a thin amorphous carbon layer has been found at 1500 °C with the 0.12 and 0.24 Torr of DMSCB and a lower temperature of 1200 °C with the 0.48 Torr of DMSCB. An increase in the DMSCB sample pressure gives rise to higher Si and C contents. As a result, the formation of SiC and W{sub 5}Si{sub 3} has been observed with the two high-pressure DMSCB samples (i.e., 0.24 and 0.48 Torr). The rich decomposition chemistry of DMSCB on the W surfaces is responsible for the extensive changes in the structure of the W filament, providing support for the close relationship between the gas-phase decomposition chemistry and the nature of alloy formation on the metal surface. The understanding of the structural changes obtained from this work will help guide the development of efficient methods to solve the filament aging problem in Cat-CVD and also to achieve a controllable deposition process.

Sputtered tungsten-based ternary and quaternary layers for nanocrystalline diamond deposition.

Science.gov (United States)

Walock, Michael J; Rahil, Issam; Zou, Yujiao; Imhoff, Luc; Catledge, Shane A; Nouveau, Corinne; Stanishevsky, Andrei V

2012-06-01

Many of today's demanding applications require thin-film coatings with high hardness, toughness, and thermal stability. In many cases, coating thickness in the range 2-20 microm and low surface roughness are required. Diamond films meet many of the stated requirements, but their crystalline nature leads to a high surface roughness. Nanocrystalline diamond offers a smoother surface, but significant surface modification of the substrate is necessary for successful nanocrystalline diamond deposition and adhesion. A hybrid hard and tough material may be required for either the desired applications, or as a basis for nanocrystalline diamond film growth. One possibility is a composite system based on carbides or nitrides. Many binary carbides and nitrides offer one or more mentioned properties. By combining these binary compounds in a ternary or quaternary nanocrystalline system, we can tailor the material for a desired combination of properties. Here, we describe the results on the structural and mechanical properties of the coating systems composed of tungsten-chromium-carbide and/or nitride. These WC-Cr-(N) coatings are deposited using magnetron sputtering. The growth of adherent nanocrystalline diamond films by microwave plasma chemical vapor deposition has been demonstrated on these coatings. The WC-Cr-(N) and WC-Cr-(N)-NCD coatings are characterized with atomic force microscopy and SEM, X-ray diffraction, X-ray photoelectron spectroscopy, Raman spectroscopy, and nanoindentation.

Tungsten coatings electro-deposited on CFC substrates from oxide molten salt

Energy Technology Data Exchange (ETDEWEB)

Sun, Ningbo; Zhang, Yingchun, E-mail: zycustb@163.com; Lang, Shaoting; Jiang, Fan; Wang, Lili

2014-12-15

Tungsten is considered as plasma facing material in fusion devices because of its high melting point, its good thermal conductivity, its low erosion rate and its benign neutron activation properties. On the other hand, carbon based materials like C/C fiber composites (CFC) have been used for plasma facing materials (PFMs) due to their high thermal shock resistance, light weight and high strength. Tungsten coatings on CFC substrates are used in the JET divertor in the frame of the JET ITER-like wall project, and have been prepared by plasma spray (PS) and other techniques. In this study, tungsten coatings were electro-deposited on CFC from Na{sub 2}WO{sub 4}–WO{sub 3} molten salt under various deposition parameters at 900 °C in air. In order to obtain tungsten coatings with excellent performance, the effects of pulse duration ratio and pulse current density on microstructures and crystal structures of tungsten coatings were investigated by X-ray diffraction (XRD, Rigaku Industrial Co., Ltd., D/MAX-RB) and a scanning electron microscope (SEM, JSM 6480LV). It is found that the pulsed duration ratio and pulse current density had a significant influence on tungsten nucleation and electro-crystallization phenomena. SEM observation revealed that intact, uniform and dense tungsten coatings formed on the CFC substrates. Both the average grain size and thickness of the coating increased with the pulsed current density. The XRD results showed that the coatings consisted of a single phase of tungsten with the body centered cubic (BCC) structure. The oxygen content of electro-deposited tungsten coatings was lower than 0.05%, and the micro-hardness was about 400 HV.

Interfacial engineering of two-dimensional nano-structured materials by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Zhuiykov, Serge, E-mail: serge.zhuiykov@ugent.be [Ghent University Global Campus, Department of Applied Analytical & Physical Chemistry, Faculty of Bioscience Engineering, 119 Songdomunhwa-ro, Yeonsu-Gu, Incheon 406-840 (Korea, Republic of); Kawaguchi, Toshikazu [Global Station for Food, Land and Water Resources, Global Institution for Collaborative Research and Education, Hokkaido University, N10W5 Kita-ku, Sapporo, Hokkaido 060-0810 (Japan); Graduate School of Environmental Science, Hokkaido University, N10W5 Kita-ku, Sapporo, Hokkaido 060-0810 (Japan); Hai, Zhenyin; Karbalaei Akbari, Mohammad; Heynderickx, Philippe M. [Ghent University Global Campus, Department of Applied Analytical & Physical Chemistry, Faculty of Bioscience Engineering, 119 Songdomunhwa-ro, Yeonsu-Gu, Incheon 406-840 (Korea, Republic of)

2017-01-15

Highlights: • Advantages of atomic layer deposition technology (ALD) for two-dimensional nano-crystals. • Conformation of ALD technique and chemistry of precursors. • ALD of semiconductor oxide thin films. • Ultra-thin (∼1.47 nm thick) ALD-developed tungsten oxide nano-crystals on large area. - Abstract: Atomic Layer Deposition (ALD) is an enabling technology which provides coating and material features with significant advantages compared to other existing techniques for depositing precise nanometer-thin two-dimensional (2D) nanostructures. It is a cyclic process which relies on sequential self-terminating reactions between gas phase precursor molecules and a solid surface. ALD is especially advantageous when the film quality or thickness is critical, offering ultra-high aspect ratios. ALD provides digital thickness control to the atomic level by depositing film one atomic layer at a time, as well as pinhole-free films even over a very large and complex areas. Digital control extends to sandwiches, hetero-structures, nano-laminates, metal oxides, graded index layers and doping, and it is perfect for conformal coating and challenging 2D electrodes for various functional devices. The technique’s capabilities are presented on the example of ALD-developed ultra-thin 2D tungsten oxide (WO{sub 3}) over the large area of standard 4” Si substrates. The discussed advantages of ALD enable and endorse the employment of this technique for the development of hetero-nanostructure 2D semiconductors with unique properties.

Hydrogen blister formation on cold-worked tungsten with layered structure

International Nuclear Information System (INIS)

Nishijima, Dai; Sugimoto, Takanori; Takamura, Shuichi; Ye, Minyou; Ohno, Noriyasu

2005-01-01

Low-energy ( 10 21 m -2 s -1 ) hydrogen plasma exposures were performed on cold-worked powder metallurgy tungsten (PM-W), recrystallized cold-worked PM-W and hot-worked PM-W. Large blisters with a diameter of approximately 100-200 μm were observed only on the surface of cold-worked PM-W. The blister formation mechanism has not been clarified thus far. PM-W has a consisting of 1-μm-thick layers, which is formed by press-roll processing. A detailed observation of the cross section of those blisters shows for the first time that the blisters are formed by cleaving the upper layer along the stratified layer. These experimental results indicate that the manufacturing process of tungsten material is one of the key factors for blister formation on the tungsten surface. (author)

Dynamic control of low-Z material deposition and tungsten erosion by strike point sweeping on DIII-D

Directory of Open Access Journals (Sweden)

J. Guterl

2017-08-01

Full Text Available Carbon deposition on tungsten between ELMs was investigated in DIII-D in semi-attached/detached H-mode plasma conditions using fixed outer strike point (OSP positions. Carbon deposition during plasma exposure of tungsten was monitored in-situ by measuring the reflectivity of the tungsten sample surface. No significant carbon deposition, i.e., without strong variations of the reflectivity, was observed during these experiments including discharges at high densities. In contrast, ERO modeling predicts a significant carbon deposition on the tungsten surface for those high density plasma conditions. The surface reflectivity decreases with methane injection, consistent with increased carbon coverage, as expected. The sweeping of OSP leads to a pronounced increase of the surface reflectivity, suggesting that the strike point sweeping may provide an effective means to remove carbon coating from tungsten surface. The ERO modeling however predicts again a regime of carbon deposition for these experiments. The discrepancies between carbon deposition regime predicted by the ERO model and the experimental observations suggest that carbon erosion during ELMs may significantly affect carbon deposition on tungsten.

Programming voltage reduction in phase change memory cells with tungsten trioxide bottom heating layer/electrode

International Nuclear Information System (INIS)

Rao Feng; Song Zhitang; Gong Yuefeng; Wu Liangcai; Feng Songlin; Chen, Bomy

2008-01-01

A phase change memory cell with tungsten trioxide bottom heating layer/electrode is investigated. The crystalline tungsten trioxide heating layer promotes the temperature rise in the Ge 2 Sb 2 Te 5 layer which causes the reduction in the reset voltage compared to a conventional phase change memory cell. Theoretical thermal simulation and calculation for the reset process are applied to understand the thermal effect of the tungsten trioxide heating layer/electrode. The improvement in thermal efficiency of the PCM cell mainly originates from the low thermal conductivity of the crystalline tungsten trioxide material.

Chemically vapor-deposited tungsten: its high temperature strength and ductility

International Nuclear Information System (INIS)

Bryant, W.A.

1977-01-01

The high temperature tensile ductility (as measured by total elongation normal to the growth direction) of chemically vapor-deposited tungsten was found to be significantly greater than previously reported. A correlation was found between ductility and void content. However, voids were found to have essentially no effect on the high temperature strength of this material, which is considerably weaker than powder metallurgy tungsten. (Auth.)

A supercritical carbon dioxide plasma process for preparing tungsten oxide nanowires

International Nuclear Information System (INIS)

Kawashima, Ayato; Nomura, Shinfuku; Toyota, Hiromichi; Takemori, Toshihiko; Mukasa, Shinobu; Maehara, Tsunehiro

2007-01-01

A supercritical carbon dioxide (CO 2 ) plasma process for fabricating one-dimensional tungsten oxide nanowires coated with amorphous carbon is presented. High-frequency plasma was generated in supercritical carbon dioxide at 20 MPa by using tungsten electrodes mounted in a supercritical cell, and subsequently an organic solvent was introduced with supercritical carbon dioxide into the plasma. Electron microscopy and Raman spectroscopy investigations of the deposited materials showed the production of tungsten oxide nanowires with or without an outer layer. The nanowires with an outer layer exhibited a coaxial structure with an outer concentric layer of amorphous carbon and an inner layer of tungsten oxide with a thickness and diameter of 20-30 and 10-20 nm, respectively

Geochronology, petrogenesis and metallogeny of Piaotang granitoids in the tungsten deposit region of South China

International Nuclear Information System (INIS)

He Zhenyu; Xu Xisheng; Wang Xudong; Yu Yao; Zou Haibo

2010-01-01

The tungsten deposit region of South China is well known as the world's leading tungsten (W) producer. The Piaotang tungsten deposit in the region is such a representative large-scale quartz vein type tungsten polymetallic deposit that is closely associated with granitoids. In the present study we present precise LA-ICP-MS zircon U-Pb dating and LA-MC-ICPMS zircon Hf isotopic data for the samples from exposed quartz diorite body and buried granite stock in the Piaotang tungsten deposit area. Zircon U-Pb dating results indicate that the quartz diorite body was formed in Early Paleozoic time at 439±2 Ma, whereas the granite body was emplaced in EarlyYanshanian time at 158±3 Ma. Both the quartz diorite and granite have negative ε Hf (t) values, with similar two-stage zircon Hf model ages ranging from 1.8 to 2.1 Ga. Through integration of our new data with the isotope data of Precambrian basement rocks in western Cathaysia, we suggest that the Paleoproterozoic Hf model ages (1.8-2.1 Ga) might be an average age which resulted from mixing of continental materials of different ages. Both the Piaotang Early Paleozoic quartz diorite and Early Yanshanian granite are produced by reworking of the heterogeneous Neoproterozoic crust. Our zircon ages, together with the geochemical data and geological features and ore-forming ages of this tungsten deposit, indicate that the buried Early Yanshanian granite, rather than the exposed quartz diorite, is genetically associated with tungsten mineralization. The distinct metallogeny difference between the Piaotang Early Paleozoic quartz diorite and Early Yanshanian granite can be ascribed to the different degrees of magma differentiation. The Early Yanshanian granite is highly differentiated rock and similar to the other W-Sn deposits generating granitoids in South China. The extents of magma differentiation depend on the tectonic setting and the mechanism of magma generation. On the basis of the relationship between two different

Adhesion of non-selective CVD tungsten to silicon dioxide

International Nuclear Information System (INIS)

Woodruff, D.W.; Wilson, R.H.; Sanchez-Martinez, R.A.

1986-01-01

Adhesion of non-selective, CVD tungsten to silicon dioxide is a critical issue in the development of tungsten as a metalization for VLSI circuitry. Without special adhesion promoters, tungsten deposited from WF/sub 6/ and H/sub 2/ has typically failed a standard tape test over all types of silicon oxides and nitrides. The reasons for failure of thin films, and CVD tungsten in particular are explored along with standard techniques for improving adhesion of thin films. Experiments are reported which include a number of sputtered metals as adhesion promoters, as well as chemical and plasma treatment of the oxide surface. Sputtered molybdenum is clearly the superior adhesion promoting layer from these tests. Traditional adhesion layers such as chromium or titanium failed as adhesion layers for CVD tungsten possibly due to chemical reactions between the WF/sub 6/ and Cr or Ti

Morphology of Si/tungsten-silicides/Si interlayers

International Nuclear Information System (INIS)

Theodore, N.; Secco d'Aragona, F.; Blackstone, S.

1992-01-01

Tungsten and tungsten-silicides are of interest for semiconductor technology because of their refractory nature, low electrical-resistivity and high electromigration-resistance. This paper presents the first formation of buried tungsten-silicide layers in silicon, by proximity adhesion. The interlayers, created by a combination of chemical vapor-deposition (CVD) and proximity-adhesion were studied using transmission electron-microscopy (TEM). The behavior of the layers in the presence and absence of an adjacent silicon-dioxide interlayer was also investigated. Buried silicide layers were successfully formed with or without the adjacent silicon-dioxide. The silicide formed continuous layers with single grains encompassing the width of the interlayer. Individual grains were globular, with cusps at grain boundaries. This caused interlayer-thicknesses to be non-uniform, with lower thickness values being present at the cusps. Occasional voids were observed at grain-boundary cusps. The voids were smaller and less frequent in the presence of an adjacent oxide-layer, due to flow of the oxide during proximity adhesion. Electron-diffraction revealed a predominance of tungsten-disilicide in the interlayers, with some free tungsten being present. Stresses in the silicide layers caused occasional glide dislocations to propagate into the silicon substrate beneath the interlayers. The dislocations propagate only ∼100 nm into the substrate and therefore should not be detrimental to use of the buried layers. Occasional precipitates were observed at the end of glide-loops. These possibly arise due to excess tungsten from the interlayer diffusion down the glide dislocation to finally precipitate out as tungsten-silicide

Issues involved in the atomic layer deposition of metals

Science.gov (United States)

Grubbs, Robert Kimes

Auger Electron Spectroscopy (AES) was used to study the nucleation and growth of tungsten on aluminum oxide surfaces. Tungsten metal was deposited using Atomic Layer Deposition (ALD) techniques. ALD uses sequential surface reactions to deposit material with atomic layer control. W ALD is performed using sequential exposures of WF6 and Si2H6. The step-wise nature of W ALD allows nucleation studies to be performed by analyzing the W surface concentration after each ALD reaction. Nucleation and growth regions can be identified by quantifying the AES signal intensities from both the W surface and the Al2O3 substrate. W nucleation occurred in 3 ALD reaction cycles. The AES results yielded a nucleation rate of 1.0 A/ALD cycle and a growth rate of ≈3 A/ALD cycle. AES studies also explored the nucleation and growth of Al2O3 on W. Al2O3 nucleated in 1 ALD cycle giving a nucleation rate of 3.5 A/ALD cycle and a subsequent growth rate of 1.0 A/ALD cycle. Mass spectrometry was then used to study the ALD reaction chemistry of tungsten deposition. Because of the step-wise nature of the W ALD chemistry, each W ALD reaction could be studied independently. The gaseous mass products were identified from both the WF6 and Si2H6 reactions. H2, HF and SiF4 mass products were observed for the WF6 reaction. The Si2H6 reaction displayed a room temperature reaction and a 200°C reaction. Products from the room temperature Si2H6 reaction were H2 and SiF3H. The reaction at 200°C yielded only H2 as a reaction product. H2 desorption from the surface contributes to the 200°C Si2H6 reaction. AES was used to confirm that the gas phase reaction products are correlated with a change in the surface species. Atomic hydrogen reduction of metal halides and oganometallic compounds provides another method for depositing metals with atomic layer control. The quantity of atomic hydrogen necessary to perform this chemistry is critical to the metal ALD process. A thermocouple probe was constructed to

Growth, structure, and tribological behavior of atomic layer-deposited tungsten disulphide solid lubricant coatings with applications to MEMS

International Nuclear Information System (INIS)

Scharf, T.W.; Prasad, S.V.; Dugger, M.T.; Kotula, P.G.; Goeke, R.S.; Grubbs, R.K.

2006-01-01

This paper describes the synthesis, structure, and tribological behavior of nanocomposite tungsten disulphide (WS 2 ) solid lubricant films grown by atomic layer deposition. A new catalytic route, incorporating a diethyl zinc catalyst, was established to promote the adsorption and growth of WS 2 . The films were grown down to 8 nm in thickness by sequential exposures of WF 6 and H 2 S gases in a viscous flow reactor on Si, SiO 2 , stainless steel, and polycrystalline Si and electroplated Ni microelectromechanical systems structures. Films were studied by cross-sectional transmission electron microscopy (XTEM) with Automated eXpert Spectral Image Analysis (AXSIA) software for X-ray spectral images and X-ray diffraction to determine the coating conformality and crystallinity. The coatings exhibited a hexagonal layered structure with predominant preferentially orientated (0 0 2) basal planes. Regardless of orientation to the substrate surface, these basal planes when sheared imparted low friction with a steady-state friction coefficient as low as 0.008 to 50,000 cycles in a dry nitrogen environment. The formation of smooth transfer films during wear provided low interfacial shear stresses during sliding thus achieving low friction and wear. The XTEM combined with AXSIA of the wear tracks identified this mechanism and the effects of vapor phase reaction by-product etching on insulating and native polycrystalline Si and Ni surfaces

Hydrocarbon deposition in gaps of tungsten and graphite tiles in Experimental Advanced Superconducting Tokamak edge plasma parameters

International Nuclear Information System (INIS)

Xu Qian; Yang Zhongshi; Luo Guangnan

2015-01-01

The three-dimensional (3D) Monte Carlo code PIC-EDDY has been utilized to investigate the mechanism of hydrocarbon deposition in gaps of tungsten tiles in the Experimental Advanced Superconducting Tokamak (EAST), where the sheath potential is calculated by the 2D in space and 3D in velocity particle-in-cell method. The calculated results for graphite tiles using the same method are also presented for comparison. Calculation results show that the amount of carbon deposited in the gaps of carbon tiles is three times larger than that in the gaps of tungsten tiles when the carbon particles from re-erosion on the top surface of monoblocks are taken into account. However, the deposition amount is found to be larger in the gaps of tungsten tiles at the same CH 4 flux. When chemical sputtering becomes significant as carbon coverage on tungsten increases with exposure time, the deposition inside the gaps of tungsten tiles would be considerable. (author)

On the Genesis and Mineralization of the Tungsten Deposit Uludağ

Directory of Open Access Journals (Sweden)

G. van der KAADEN

1958-06-01

Full Text Available The tungsten deposit of Uludağ is closely linked with a late tectonic Paleozoic intrusion of a granodiorite - granite - batholith into a series of crystalline rocks and marbles. The deposit is located in a marble syncline folded into the granite. It is the tectonic structure of this syncline that controlled the location and the shape of the deposit. The mineralization took place after the granite of the border-zone was more or less solidified. High-temperature solutions and volatiles acted with the wall-rock along cracks, bedding-and shearing planes and resulted in the formation of tungsten-bearing sheets of tactile in the marble syncline and in the mineralization of a brecciated zone on both sides of the contact between marble and granite. The sequence of mineralization is discussed

Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

Science.gov (United States)

Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

2015-12-01

Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

Chemical vapor deposition based tungsten disulfide (WS2) thin film transistor

KAUST Repository

Hussain, Aftab M.

2013-04-01

Tungsten disulfide (WS2) is a layered transition metal dichalcogenide with a reported band gap of 1.8 eV in bulk and 1.32-1.4 eV in its thin film form. 2D atomic layers of metal dichalcogenides have shown changes in conductivity with applied electric field. This makes them an interesting option for channel material in field effect transistors (FETs). Therefore, we show a highly manufacturable chemical vapor deposition (CVD) based simple process to grow WS2 directly on silicon oxide in a furnace and then its transistor action with back gated device with room temperature field effect mobility of 0.1003 cm2/V-s using the Schottky barrier contact model. We also show the semiconducting behavior of this WS2 thin film which is more promising than thermally unstable organic materials for thin film transistor application. Our direct growth method on silicon oxide also holds interesting opportunities for macro-electronics applications. © 2013 IEEE.

Method for deposition of a conductor in integrated circuits

Science.gov (United States)

Creighton, J. Randall; Dominguez, Frank; Johnson, A. Wayne; Omstead, Thomas R.

1997-01-01

A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.

The annealing effect on work function variation of WN{sub x}C{sub y} films deposited by remote plasma atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Kim, Hyunjung; Shin, Changhee; Lim, Heewoo; Kim, Manseok [Department of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul (Korea, Republic of); Jang, Woochool; Lee, Kunyoung [Division of Materials Science and Engineering, Hanyang University, Seoul (Korea, Republic of); Yuh, Junhan [Division of Steel Solution, POSCO, Seoul (Korea, Republic of); Jeon, Hyeongtag [Department of Nano-Scale Semiconductor Engineering, Hanyang University, Seoul (Korea, Republic of); Division of Materials Science and Engineering, Hanyang University, Seoul (Korea, Republic of)

2017-07-15

Tungsten-nitrogen-carbide (WN{sub x}C{sub y}) thin films were investigated as the metal gate of complementary metal-oxide-semiconductor (CMOS) devices. WN{sub x}C{sub y} thin films were deposited by employing the remote plasma atomic layer deposition (RPALD) using a bis(tert-butylimido) bis (dimethylamido) tungsten (BTBMW) precursor and hydrogen plasma as a reactant. The growth rate of the WN{sub x}C{sub y} films was about 0.12 nm/cycle. X-ray diffraction (XRD) analysis indicated that the films consisted of a mixture of tungsten carbide and tungsten nitride phases. The atomic force microscope (AFM) analysis further confirmed that the WN{sub x}C{sub y} film surfaces deposited by RPALD were smooth. In addition, the chemical bonding state analysis showed that the WN{sub x}C{sub y} films consisted of WN, WC, and WO phases. To measure the work function of the WN{sub x}C{sub y} film, a MOSCAP (metal oxide semiconductor capacitor) stack was fabricated and the flat band voltage was measured by current-voltage (C-V) measurements. A WN{sub x}C{sub y} work function value of 4.91 eV was suitable for p-MOS and the work function of the WN{sub x}C{sub y} films varied depending on the annealing treatment, and was higher than the work function of the as-deposited WN{sub x}C{sub y} film. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Chemical processes, desired and undesired, in the selective chemical vapor deposition of tungsten

International Nuclear Information System (INIS)

Wilson, R.H.

1988-01-01

The deposition of tungsten by the hydrogen reduction of tungsten hexafluoride is discussed in the context of its application in integrated circuits. The overall reaction is relatively simple; however, numerous competing reactions and their implications are discussed. In addition, those areas which could benefit from further investigation are identified

Simulation of erosion and deposition processes of many-component surface layers in fusion devices; Simulation von Erosion- und Depositionsprozessen mehrkomponentiger Oberflaechenschichten in Fusionsanlagen

Energy Technology Data Exchange (ETDEWEB)

Droste, S.

2007-02-15

The present choice of first wall materials in ITER will unavoidably lead to the formation of mixed carbon, tungsten and beryllium layers. Predictive modelling of erosion processes, impurity transport and deposition processes is important. For this the 3D Monte-Carlo code ERO can be used. In this thesis ERO has been coupled to the existing Monte-Carlo code SDTrimSP to describe material mixing processes in wall components correctly. SDTrimSP describes the surface by calculating the transport of ions in solids. It keeps track of the depth dependent material concentration caused by the implantation of projectiles in the solid. The calculation of movements of the recoil atoms within the solid gives reflection coefficients and sputtering yields. Since SDTrimSP does not consider chemical processes a new method has been developed to implement chemical erosion of carbon by the impact of hydrogen projectiles. The new code ERO-SDTrimSP was compared to TEXTOR experiments which were carried out to study the formation of mixed surface layers. In these experiments methane CH4 was injected through drillings in graphite and tungsten spherical limiters into the plasma. A pronounced substrate dependence was observed. The deposition efficiency, i.e. the ratio of the locally deposited to the injected amount of carbon, was 4% for graphite and 0.3% for tungsten. The deposition-dominated area on the graphite limiter covers a five times larger area than on the tungsten limiter. Modelling of this experiment with ERO-SDTrimSP also showed a clear substrate dependence with 2% deposition efficiency for graphite and less than 0.5% for tungsten. An important result of the comparison between experiment and simulation was that the effective sticking of hydrocarbon radicals hitting the surface must be negligible. Furthermore, it was shown that local re-deposited carbon layers are 10 times more effectively eroded than ordinary graphite. Simulation of the impurity transport in the plasma was checked

Selective CVD tungsten on silicon implanted SiO/sub 2/

International Nuclear Information System (INIS)

Hennessy, W.A.; Ghezzo, M.; Wilson, R.H.; Bakhru, H.

1988-01-01

The application range of selective CVD tungsten is extended by its coupling to the ion implantation of insulating materials. This article documents the results of selective CVD tungsten using silicon implanted into SiO/sub 2/ to nucleate the tungsten growth. The role of implant does, energy, and surface preparation in achieving nucleation are described. SEM micrographs are presented to demonstrate the selectivity of this process. Measurements of the tungsten film thickness and sheet resistance are provided for each of the experimental variants corresponding to successful deposition. RBS and XPS analysis are discussed in terms of characterizing the tungsten/oxide interface and to evaluate the role of the silicon implant in the CVD tungsten mechanism. Utilizing this method a desired metallization pattern can be readily defined with lithography and ion implantation, and accurately replicated with a layer of CVD tungsten. This approach avoids problems usually associated with blanket deposition and pattern transfer, which are particularly troublesome for submicron VLSI technology

Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

Energy Technology Data Exchange (ETDEWEB)

Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw; Chang, Chih-Hsiang; Chang, Chih-Jui [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

2016-06-27

This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO{sub 2} backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

Erosion and migration of tungsten employed at the central column heat shield of ASDEX Upgrade

International Nuclear Information System (INIS)

Krieger, K.; Gong, X.; Balden, M.; Hildebrandt, D.; Maier, H.; Rohde, V.; Roth, J.; Schneider, W.

2002-01-01

In ASDEX Upgrade, tungsten was employed as plasma facing material at the central column heat shield in the plasma main chamber. The campaign averaged tungsten erosion flux was determined by measuring the difference of the W-layer thickness before and after the experimental campaign using ion beam analysis methods. The observed lateral variation and the total amount of eroded tungsten are attributed to erosion by impact of ions from the scrape-off layer plasma. Migration and redeposition of eroded tungsten were investigated by quantitative analysis of deposited tungsten on collector probes and wall samples. The obtained results, as well as the spectroscopically observed low tungsten plasma penetration probability, indicate that a major fraction of the eroded tungsten migrates predominantly through direct transport channels in the outer plasma scrape-off layer without entering the confined plasma

SiC fibre by chemical vapour deposition on tungsten filament

Indian Academy of Sciences (India)

Unknown

SiC fibre by chemical vapour deposition on tungsten filament ... CMCs), in defence and industrial applications. SiC has attractive ... porosity along with chemical purity. This is lacking .... reactor. Since mercury is very toxic it should be removed.

Pulse current electrodeposition of tungsten coatings on V–4Cr–4Ti alloy

International Nuclear Information System (INIS)

Jiang, Fan; Zhang, Yingchun; Li, Xuliang

2015-01-01

Highlights: • Tungsten coatings were successfully electroplated on vanadium alloy substrate. • Tungsten coatings consisted of two sub-layers. • Tungsten coatings plated at lower duty cycle has a better surface quality. • High heat flux property of tungsten coatings was investigated. • Helium ion irradiation property of tungsten coatings was investigated. - Abstract: Tungsten coatings with high (2 2 0)-orientation were formed on V alloy substrate by pulse current electrodeposition in air atmosphere. The coatings’ microstructure, crystal structure and adhesive strength between coatings and substrates were investigated. It could be observed the tungsten coatings consisted of two sub-layers with the inner tooth-like layer, and the outer columnar layer. The tungsten coatings deposited at lower duty cycle have a better surface quality with a little change in the adhesive strength. The tungsten coating was exposed to electron beam with power density of 200 MW/m 2 in the thermal shock test, the tungsten crystal grain surface melt, the microcracks are found among the crystal grains. Exfoliation, flaking and dense needle-like holes were observed on the tungsten coating after irradiation with helium ions at an energy of 65 keV and an implanted dose of 22.67 × 10 18 cm −2

High heat flux testing of TiC coated molybdenum with a tungsten intermediate layer

International Nuclear Information System (INIS)

Fujitsuka, Masakazu; Fukutomi, Masao; Okada, Masatoshi

1988-01-01

The use of low atomic number (Z) material coatings for fusion reactor first-wall components has proved to be a valuable technique to reduce the plasma radiation losses. Molybdenum coated with titanium carbide is considered very promising since it has a good capability of receiving heat from the plasma. An interfacial reaction between the TiC film and the molybdenum substrate, however, causes a severe deterioration of the film at elevated temperatures. In order to solve this problem a TiC coated molybdenum with an intermediate tungsten layer was developed. High temperature properties of this material was evaluated by a newly devised electron beam heating apparatus. TiC coatings prepared on a vacuum-heat-treated molybdenum with a tungsten intermediate layer showed good high temperature stability and survived 2.0 s pulses of heating at a power density as high as 53 MW/m 2 . The melt area of the TiC coatings in high heat flux testings also markedly decreased when a tungsten intermediate layer was applied. The melting mechanism of the TiC coatings with and without a tungsten intermediate layer was discussed by EPMA measurements. (author)

RBS analysis of electrochromic layers

Energy Technology Data Exchange (ETDEWEB)

Green, D.C.; Bell, J.M. [University of Technology, Sydney, NSW (Australia); Kenny, M.J.; Wielunski, L.S. [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Lindfield, NSW (Australia). Div. of Applied Physics

1993-12-31

Tungsten oxide thin films produced by dip-coating from tungsten alkoxide solutions are of interest for their application in large area switchable windows. The application consists of a layer of electrochromic tungsten oxide (W0{sub 3}) on indium tin oxide (ITO) coated glass in contact with a complementary structure. Electrochromic devices are switchable between states of high and low transparency by the application of a small voltage. The mechanism relies on the dual injection of ions and electrons into the W0{sub 3} layer from adjacent layers in the device. Electrochromic tungsten oxide can be deposited using standard techniques (eg. sputtering and evaporation) but also using sol-gel deposition. Sol-gel processing has an advantage over conventional preparation techniques because of the simplicity of the equipment. The scaling up to large area coatings is also feasible. RBS and forward recoil has been used to obtain profiles for individual elements in the structure of electrochromic films. 3 refs., 3 figs.

RBS analysis of electrochromic layers

Energy Technology Data Exchange (ETDEWEB)

Green, D C; Bell, J M [University of Technology, Sydney, NSW (Australia); Kenny, M J; Wielunski, L S [Commonwealth Scientific and Industrial Research Organisation (CSIRO), Lindfield, NSW (Australia). Div. of Applied Physics

1994-12-31

Tungsten oxide thin films produced by dip-coating from tungsten alkoxide solutions are of interest for their application in large area switchable windows. The application consists of a layer of electrochromic tungsten oxide (W0{sub 3}) on indium tin oxide (ITO) coated glass in contact with a complementary structure. Electrochromic devices are switchable between states of high and low transparency by the application of a small voltage. The mechanism relies on the dual injection of ions and electrons into the W0{sub 3} layer from adjacent layers in the device. Electrochromic tungsten oxide can be deposited using standard techniques (eg. sputtering and evaporation) but also using sol-gel deposition. Sol-gel processing has an advantage over conventional preparation techniques because of the simplicity of the equipment. The scaling up to large area coatings is also feasible. RBS and forward recoil has been used to obtain profiles for individual elements in the structure of electrochromic films. 3 refs., 3 figs.

Preparation of tungsten coatings on graphite by electro-deposition via Na2WO4–WO3 molten salt system

International Nuclear Information System (INIS)

Sun, Ning-bo; Zhang, Ying-chun; Jiang, Fan; Lang, Shao-ting; Xia, Min

2014-01-01

Highlights: • Tungsten coatings on graphite were firstly obtained by electro-deposition method via Na 2 WO 4 –WO 3 molten salt system. • Uniform and dense tungsten coatings could be easily prepared in each face of the sample, especially the complex components. • The obtained tungsten coatings are with high purity, ultra-low oxygen content (about 0.022 wt%). • Modulate pulse parameters can get tungsten coatings with different thickness and hardness. - Abstract: Tungsten coating on graphite substrate is one of the most promising candidate materials as the ITER plasma facing components. In this paper, tungsten coatings on graphite substrates were fabricated by electro-deposition from Na 2 WO 4 –WO 3 molten salt system at 1173 K in atmosphere. Tungsten coatings with no impurities were successfully deposited on graphite substrates under various pulsed current densities in an hour. By increasing the current density from 60 mA cm −2 to 120 mA cm −2 an increase of the average size of tungsten grains, the thickness and the hardness of tungsten coatings occurs. The average size of tungsten grains can reach 7.13 μm, the thickness of tungsten coating was in the range of 28.8–51 μm, and the hardness of coating was higher than 400 HV. No cracks or voids were observed between tungsten coating and graphite substrate. The oxygen content of tungsten coating is about 0.022 wt%

High-temperature oxidation of tungsten covered by layer of glass-enamel melt

International Nuclear Information System (INIS)

Vasnetsova, V.B.; Shardakov, N.T.; Kudyakov, V.Ya.; Deryabin, V.A.

1997-01-01

Corrosion losses of tungsten covered by the layer of glass-enamel melt were determined at 800, 850, 900, 950 deg C. It is shown that the rate of high-temperature oxidation of tungsten decreases after application of glass-enamel melt on its surface. This is probably conditioned by reduction of area of metal interaction with oxidizing atmosphere

Emission characteristics of dispenser cathodes with a fine-grained tungsten top layer

Science.gov (United States)

Kimura, S.; Higuchi, T.; Ouchi, Y.; Uda, E.; Nakamura, O.; Sudo, T.; Koyama, K.

1997-02-01

In order to improve the emission stability of the Ir-coated dispenser cathode under ion bombardment, a fine-grained tungsten top layer was applied on the substrate porous tungsten plug before Ir coating. The emission characteristics were studied after being assembled in a CRT gun. Cathode current was measured under pulse operation in a range of 0.1-9% duty. Remarkable anti-ion bombardment characteristics were observed over the range of 1-6% duty. The improved cathode showed 1.5 times higher emission current than that of a conventional Ir-coated dispenser cathode at 4% duty. AES analysis showed that the recovering rates of surface Ba and O atoms after ion bombardment were 2.5 times higher. From these results it is confirmed that the Ir coated cathode with a fine-grained tungsten top layer is provided with a good tolerance against the ion bombardment.

XPS and TEM study of W-DLC/DLC double-layered film

International Nuclear Information System (INIS)

Takeno, Takanori; Komiyama, Takao; Miki, Hiroyuki; Takagi, Toshiyuki; Aoyama, Takashi

2009-01-01

A double-layered film of tungsten-containing diamond-like carbon (W-DLC) and DLC, (W-DLC)/DLC, was investigated. A film of 1.6 μm in thickness was deposited onto silicon substrate. The investigate double-layered coating was deposited by using the combination of PECVD and co-sputtering of tungsten metal target. Structure, interface and chemical bonding state of the investigated film were analyzed by Transmission electron microscope (TEM) and X-ray photoelectron spectroscopy (XPS). From the results of the analyses, the structure of double-layered film is that amorphous phase of carbon is continued from DLC to W-DLC and tungsten metal clusters are dispersed in W-DLC layer.

Economical Atomic Layer Deposition

Science.gov (United States)

Wyman, Richard; Davis, Robert; Linford, Matthew

2010-10-01

Atomic Layer Deposition is a self limiting deposition process that can produce films at a user specified height. At BYU we have designed a low cost and automated atomic layer deposition system. We have used the system to deposit silicon dioxide at room temperature using silicon tetrachloride and tetramethyl orthosilicate. Basics of atomic layer deposition, the system set up, automation techniques and our system's characterization are discussed.

Co-deposition of rhodium and tungsten films for the first-mirror on ITER

International Nuclear Information System (INIS)

Marot, Laurent; Steiner, Roland; Gantenbein, Markus; Mathys, Daniel; Meyer, Ernst

2011-01-01

The detailed characterizations of rhodium/tungsten films prepared by co-deposition using a dual magnetron sputtering have been carried out on silicon substrates at room temperature. Effects of the tungsten incorporated in the film on the chemical bonding state, optical reflectivity and crystallinity were investigated using X-ray photoelectron spectroscopy (XPS), reflectivity measurements, X-rays diffraction (XRD) and scanning electron microscopy (SEM). The incorporation of tungsten changes the films crystalline structure i.e. leading to Rh 3 W formation. The reflectivity of the films decreases linearly with the decrease of rhodium concentration. XPS and ultraviolet photoemission spectroscopy (UPS) measurements show a positive shift of the core level binding energy of rhodium which is coupled to a shift of the Rh d-band ΔE d away from the Fermi level. Opposite shifts are observed for tungsten.

High performance emitter for thermionic diode obtained by chemical vapor deposition

International Nuclear Information System (INIS)

Faron, R.; Bargues, M.; Durand, J.P.; Gillardeau, J.

1973-01-01

Vapor deposition process conditions presently known for tungsten and molybdenum (specifically the range of high temperatures and low pressures) permit the achievement of high performance thermionic emitters when used with an appropriate technology. One example of this uses the following series of successive vapor deposits, the five last vapor deposits constituting the fabrication of the emitting layer: Mo deposit for the formation of the nuclear fuel mechanical support; Mo deposit, which constitutes the sheath of the nuclear fuel; epitaxed Mo--W alloy deposit; epitaxed tungsten deposit; fine-grained tungsten deposit; and tungsten deposit with surface orientation according to plane (110)W. In accordance with vapor deposition techniques previously developed, such a sequence of deposits can easily be achieved with the same equipment, even without having to take out the part during the course of the process. (U.S.)

Metal-boride phase formation on tungsten carbide (WC-Co) during microwave plasma chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Johnston, Jamin M.; Catledge, Shane A., E-mail: catledge@uab.edu

2016-02-28

Graphical abstract: - Highlights: • A detailed phase analysis after PECVD boriding shows WCoB, CoB and/or W{sub 2}CoB{sub 2}. • EDS of PECVD borides shows boron diffusion into the carbide grain structure. • Nanoindentation hardness and modulus of borides is 23–27 GPa and 600–780 GPa. • Scratch testing shows hard coating with cracking at 40N and spallation at 70N. - Abstract: Strengthening of cemented tungsten carbide by boriding is used to improve the wear resistance and lifetime of carbide tools; however, many conventional boriding techniques render the bulk carbide too brittle for extreme conditions, such as hard rock drilling. This research explored the variation in metal-boride phase formation during the microwave plasma enhanced chemical vapor deposition process at surface temperatures from 700 to 1100 °C. We showed several well-adhered metal-boride surface layers consisting of WCoB, CoB and/or W{sub 2}CoB{sub 2} with average hardness from 23 to 27 GPa and average elastic modulus of 600–730 GPa. The metal-boride interlayer was shown to be an effective diffusion barrier against elemental cobalt; migration of elemental cobalt to the surface of the interlayer was significantly reduced. A combination of glancing angle X-ray diffraction, electron dispersive spectroscopy, nanoindentation and scratch testing was used to evaluate the surface composition and material properties. An evaluation of the material properties shows that plasma enhanced chemical vapor deposited borides formed at substrate temperatures of 800 °C, 850 °C, 900 °C and 1000 °C strengthen the material by increasing the hardness and elastic modulus of cemented tungsten carbide. Additionally, these boride surface layers may offer potential for adhesion of ultra-hard carbon coatings.

Metal-boride phase formation on tungsten carbide (WC-Co) during microwave plasma chemical vapor deposition

International Nuclear Information System (INIS)

Johnston, Jamin M.; Catledge, Shane A.

2016-01-01

Graphical abstract: - Highlights: • A detailed phase analysis after PECVD boriding shows WCoB, CoB and/or W_2CoB_2. • EDS of PECVD borides shows boron diffusion into the carbide grain structure. • Nanoindentation hardness and modulus of borides is 23–27 GPa and 600–780 GPa. • Scratch testing shows hard coating with cracking at 40N and spallation at 70N. - Abstract: Strengthening of cemented tungsten carbide by boriding is used to improve the wear resistance and lifetime of carbide tools; however, many conventional boriding techniques render the bulk carbide too brittle for extreme conditions, such as hard rock drilling. This research explored the variation in metal-boride phase formation during the microwave plasma enhanced chemical vapor deposition process at surface temperatures from 700 to 1100 °C. We showed several well-adhered metal-boride surface layers consisting of WCoB, CoB and/or W_2CoB_2 with average hardness from 23 to 27 GPa and average elastic modulus of 600–730 GPa. The metal-boride interlayer was shown to be an effective diffusion barrier against elemental cobalt; migration of elemental cobalt to the surface of the interlayer was significantly reduced. A combination of glancing angle X-ray diffraction, electron dispersive spectroscopy, nanoindentation and scratch testing was used to evaluate the surface composition and material properties. An evaluation of the material properties shows that plasma enhanced chemical vapor deposited borides formed at substrate temperatures of 800 °C, 850 °C, 900 °C and 1000 °C strengthen the material by increasing the hardness and elastic modulus of cemented tungsten carbide. Additionally, these boride surface layers may offer potential for adhesion of ultra-hard carbon coatings.

Inhomogeneous strain states in sputter deposited tungsten thin films

International Nuclear Information System (INIS)

Noyan, I.C.; Shaw, T.M.; Goldsmith, C.C.

1997-01-01

The results of an x-ray diffraction study of dc-magnetron sputtered tungsten thin films are reported. It is shown that the phase transformation from the β to α W can cause multilayered single-phase films where the layers have very different stress states even if the films are in the 500 nm thickness range. copyright 1997 American Institute of Physics

Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

Energy Technology Data Exchange (ETDEWEB)

Malau, Viktor, E-mail: malau@ugm.ac.id; Ilman, Mochammad Noer, E-mail: noer-ilman@yahoo.com; Iswanto, Priyo Tri, E-mail: priyatri@yahoo.com; Jatisukamto, Gaguk, E-mail: gagukjtsk@yahoo.co.id [Mechanical and Industrial Engineering Department, Gadjah Mada University Jl. Grafika 2, Yogyakarta, 55281 (Indonesia)

2016-03-29

Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressure of 7.6 x 10{sup −2} torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10{sup −6} mbar, a fluence of 2 x 10{sup 17} ions/cm{sup 2}, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.

Tungsten oxides as interfacial layers for improved performance in hybrid optoelectronic devices

International Nuclear Information System (INIS)

Vasilopoulou, M.; Palilis, L.C.; Georgiadou, D.G.; Argitis, P.; Kennou, S.; Kostis, I.; Papadimitropoulos, G.; Stathopoulos, N.A.; Iliadis, A.A.; Konofaos, N.; Davazoglou, D.; Sygellou, L.

2011-01-01

Tungsten oxide (WO 3 ) films with thicknesses ranging from 30 to 100 nm were grown by Hot Filament Vapor Deposition (HFVD). Films were studied by X-Ray Photoemission Spectroscopy (XPS) and were found to be stoichiometric. The surface morphology of the films was characterized by Atomic Force Microscopy (AFM). Samples had a granular form with grains in the order of 100 nm. The surface roughness was found to increase with film thickness. HFVD WO 3 films were used as conducting interfacial layers in advanced hybrid organic-inorganic optoelectronic devices. Hybrid-Organic Light Emitting Diodes (Hy-OLEDs) and Organic Photovoltaics (Hy-OPVs) were fabricated with these films as anode and/or as cathode interfacial conducting layers. The Hy-OLEDs showed significantly higher current density and a lower turn-on voltage when a thin WO 3 layer was inserted at the anode/polymer interface, while when inserted at the cathode/polymer interface the device performance was found to deteriorate. The improvement was attributed to a more efficient hole injection and transport from the Fermi level of the anode to the Highest Occupied Molecular Orbital (HOMO) of a yellow emitting copolymer (YEP). On the other hand, the insertion of a thin WO 3 layer at the cathode/polymer interface of Hy-OPV devices based on a polythiophene-fullerene bulk-heterojunction blend photoactive layer resulted in an increase of the produced photogenerated current, more likely due to improved electron extraction at the Al cathode.

Tungsten oxide coatings deposited by plasma spray using powder and solution precursor for detection of nitrogen dioxide gas

Energy Technology Data Exchange (ETDEWEB)

Zhang, Chao, E-mail: zhangc@yzu.edu.cn [College of Mechanical Engineering, Yangzhou University, Yangzhou 225127 (China); Wang, Jie [College of Mechanical Engineering, Yangzhou University, Yangzhou 225127 (China); Geng, Xin [College of Mechanical Engineering, Yangzhou University, Yangzhou 225127 (China); College of Chemistry and Chemical Engineering, Yangzhou University, Yangzhou 225002 (China)

2016-05-25

Increasing attention has been paid on preparation methods for resistive-type gas sensors based on semiconductor metal oxides. In this work, tungsten oxide (WO{sub 3}) coatings were prepared on alumina substrates and used as gas sensitive layers. The coatings were deposited by atmospheric plasma spray using powder, solution precursor, or a combination of both. Tungsten oxide powder through a powder port and ammonium tungstate aqueous solution through a liquid port were injected into plasma stream respectively or together to deposit WO{sub 3} coatings. Phase structures in the coatings were characterized by X-ray diffraction analyzer. The field-emission scanning electron microscopy images confirmed that the coatings were in microstructure, nanostructure or micro-nanostructure. The sensing properties of the sensors based on the coatings exposed to 1 ppm nitrogen dioxide gas were characterized in a home-made instrument. Sensing properties of the coatings were compared and discussed. The influences of gas humidity and working temperature on the sensor responses were further studied. - Highlights: • Porous gas sensitive coatings were deposited by plasma spray using powder and solution precursor. • Crystallized WO{sub 3} were obtained through hybrid plasma spray plus a pre-conditioned step. • Plasma power had an important influence on coating microstructure. • The particle size of atmospheric plasma-sprayed microstructured coating was stable. • Solution precursor plasma-sprayed WO{sub 3} coatings had nanostructure and showed good responses to 1 ppm NO{sub 2}.

Preparation of tungsten coatings on graphite by electro-deposition via Na{sub 2}WO{sub 4}–WO{sub 3} molten salt system

Energy Technology Data Exchange (ETDEWEB)

Sun, Ning-bo [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China); Zhang, Ying-chun, E-mail: zycustb@163.com [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China); Jiang, Fan; Lang, Shao-ting [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China); Xia, Min [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China); Institute of Powder Metallurgy and Advanced Ceramics, Southwest Jiaotong University, 111, 1st Section, Northern 2nd Ring Road, Chengdu (China)

2014-11-15

Highlights: • Tungsten coatings on graphite were firstly obtained by electro-deposition method via Na{sub 2}WO{sub 4}–WO{sub 3} molten salt system. • Uniform and dense tungsten coatings could be easily prepared in each face of the sample, especially the complex components. • The obtained tungsten coatings are with high purity, ultra-low oxygen content (about 0.022 wt%). • Modulate pulse parameters can get tungsten coatings with different thickness and hardness. - Abstract: Tungsten coating on graphite substrate is one of the most promising candidate materials as the ITER plasma facing components. In this paper, tungsten coatings on graphite substrates were fabricated by electro-deposition from Na{sub 2}WO{sub 4}–WO{sub 3} molten salt system at 1173 K in atmosphere. Tungsten coatings with no impurities were successfully deposited on graphite substrates under various pulsed current densities in an hour. By increasing the current density from 60 mA cm{sup −2} to 120 mA cm{sup −2} an increase of the average size of tungsten grains, the thickness and the hardness of tungsten coatings occurs. The average size of tungsten grains can reach 7.13 μm, the thickness of tungsten coating was in the range of 28.8–51 μm, and the hardness of coating was higher than 400 HV. No cracks or voids were observed between tungsten coating and graphite substrate. The oxygen content of tungsten coating is about 0.022 wt%.

Recent Advances in the Deposition of Diamond Coatings on Co-Cemented Tungsten Carbides

Directory of Open Access Journals (Sweden)

R. Polini

2012-01-01

Full Text Available Co-cemented tungsten carbides, namely, hard metals are largely used to manufacture high wear resistant components in several manufacturing segments. Coating hard metals with superhard materials like diamond is of utmost interest as it can further extend their useful lifespan. The deposition of diamond coatings onto WC-Co can be extremely complicated as a result of poor adhesion. This can be essentially ascribed to (i the mismatch in thermal expansion coefficients between diamond and WC-Co, at the typical high temperatures inside the chemical vapour deposition (CVD chamber, generates large residual stresses at the interface; (ii the role of surface Co inside the WC-Co matrix during diamond CVD, which promotes carbon dissolution and diffusion. The present investigation reviews the techniques by which Co-cemented tungsten carbides can be treated to make them prone to receive diamond coatings by CVD. Further, it proposes interesting ecofriendly and sustainable alternatives to further improve the diamond deposition process as well as the overall performance of the coated hard metals.

Large area synthesis, characterization, and anisotropic etching of two dimensional tungsten disulfide films

International Nuclear Information System (INIS)

Mutlu, Zafer; Ozkan, Mihrimah; Ozkan, Cengiz S.

2016-01-01

Emergent properties of tungsten disulfide at the quantum confinement limit hold promise for electronic and optoelectronic applications. Here we report on the large area synthesis of atomically thin tungsten disulfide films with strong photoluminescence properties via sulfurization of the pre-deposited tungsten films. Detailed characterization of the pre-deposited tungsten films and tungsten disulfide films are performed using microscopy and spectroscopy methods. By directly heating tungsten disulfide films in air, we have shown that the films tend to be etched into a series of triangular shaped pits with the same orientations, revealing the anisotropic etching behavior of tungsten disulfide edges. Moreover, the dimensions of the triangular pits increase with the number of layers, suggesting a thickness dependent behavior of etching in tungsten disulfide films. This method offers a promising new avenue for engineering the edge structures of tungsten disulfide films. - Highlights: • Large-scale synthesis of WS_2 films is achieved via sulfurization of W films. • Annealing of W films leads to a substantial improvement in the quality of WS_2 films. • WS_2 films show laser power dependent photoluminescence characteristics. • WS_2 films are etched with well-oriented triangular pits upon annealing in air. • Anisotropic oxidative etching is greatly affected by the thickness of WS_2 films.

Hot wire chemical vapor deposition: limits and opportunities of protecting the tungsten catalyzer from silicide with a cavity

International Nuclear Information System (INIS)

Frigeri, P.A.; Nos, O.; Bengoechea, S.; Frevert, C.; Asensi, J.M.; Bertomeu, J.

2009-01-01

Hot Wire Chemical Vapor Deposition (HW-CVD) is one of the most promising techniques for depositing the intrinsic microcrystalline silicon layer for the production of micro-morph solar cells. However, the silicide formation at the colder ends of the tungsten wire drastically reduces the lifetime of the catalyzer, thus limiting its industrial exploitation. A simple but interesting strategy to decrease the silicide formation is to hide the electrical contacts of the catalyzer in a long narrow cavity which reduces the probability of the silane molecules to reach the colder ends of the wire. In this paper, the working mechanism of the cavity is elucidated. Measurements of the thickness profile of the silicon deposited in the internal walls of the cavity have been compared with those predicted using a simple diffusion model based on the assumption of Knudsen flow. A lifetime study of the protected and unprotected wires has been carried out. The different mechanisms which determine the deterioration of the catalyzer have been identified and discussed.

Influences of Hydraulic Fracturing on Fluid Flow and Mineralization at the Vein-Type Tungsten Deposits in Southern China

Directory of Open Access Journals (Sweden)

Xiangchong Liu

2017-01-01

Full Text Available Wolframite is the main ore mineral at the vein-type tungsten deposits in the Nanling Range, which is a world-class tungsten province. It is disputed how wolframite is precipitated at these deposits and no one has yet studied the links of the mechanical processes to fluid flow and mineralization. Finite element-based numerical experiments are used to investigate the influences of a hydraulic fracturing process on fluid flow and solubility of CO2 and quartz. The fluids are aqueous NaCl solutions and fluid pressure is the only variable controlling solubility of CO2 and quartz in the numerical experiments. Significant fluctuations of fluid pressure and high-velocity hydrothermal pulse are found once rock is fractured by high-pressure fluids. The fluid pressure drop induced by hydraulic fracturing could cause a 9% decrease of quartz solubility. This amount of quartz deposition may not cause a significant decrease in rock permeability. The fluid pressure decrease after hydraulic fracturing also reduces solubility of CO2 by 36% and increases pH. Because an increase in pH would cause a major decrease in solubility of tungsten, the fluid pressure drop accompanying a hydraulic fracturing process facilitates wolframite precipitation. Our numerical experiments provide insight into the mechanisms precipitating wolframite at the tungsten deposits in the Nanling Range as well as other metals whose solubility is strongly dependent on pH.

Electroless atomic layer deposition

Science.gov (United States)

Robinson, David Bruce; Cappillino, Patrick J.; Sheridan, Leah B.; Stickney, John L.; Benson, David M.

2017-10-31

A method of electroless atomic layer deposition is described. The method electrolessly generates a layer of sacrificial material on a surface of a first material. The method adds doses of a solution of a second material to the substrate. The method performs a galvanic exchange reaction to oxidize away the layer of the sacrificial material and deposit a layer of the second material on the surface of the first material. The method can be repeated for a plurality of iterations in order to deposit a desired thickness of the second material on the surface of the first material.

Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland)

2014-01-15

A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4′-oxydianiline. The successful superlattice formation with all the organic precursors is verified through x-ray reflectivity studies. The effects of the interspersed organic layers/superlattice structure on the electrical and thermoelectric properties of ZnO are investigated through resistivity and Seebeck coefficient measurements at room temperature. The results suggest an increase in carrier concentration for small concentrations of organic layers, while higher concentrations seem to lead to rather large reductions in carrier concentration.

Electro-deposition metallic tungsten coatings in a Na{sub 2}WO{sub 4}-WO{sub 3} melt on copper based alloy substrate

Energy Technology Data Exchange (ETDEWEB)

Liu, Y.H., E-mail: dreamerhong77@126.com [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China); Zhang, Y.C.; Liu, Q.Z.; Li, X.L.; Jiang, F. [School of Materials Science and Engineering, University of Science and Technology Beijing, 30 Xueyuan Road, Haidian District, Beijing 100083 (China)

2012-11-15

Highlights: Black-Right-Pointing-Pointer The tungsten coating (>1 mm) was obtained by electro-deposition method in molten salt. Black-Right-Pointing-Pointer Different thickness tungsten coatings were obtained by using different durations. Black-Right-Pointing-Pointer Good performance of coating was obtained when pulse parameters were modulated. - Abstract: The tungsten coating was prepared by electro-deposition technique on copper alloy substrate in a Na{sub 2}WO{sub 4}-WO{sub 3} melt. The coating's surface and cross-section morphologies as well as its impurities were investigated by XPS, SEM and line analysis. Various plating durations were investigated in order to obtain an optimal coating's thickness. The results demonstrated that the electro-deposited coating was compact, voidless, crackless and free from impurities. The tungsten coating's maximum Vickers hardness was measured to be 520 HV. The tungsten coating's minimum oxygen content was determined to be 0.018 wt%. Its maximum thickness was measured to be 1043.67 {mu}m when the duration of electrolysis was set to 100 h. The result of this study has demonstrated the feasibility of having thicker tungsten coatings on copper alloy substrates. These electrodeposited tungsten coatings can be potentially implemented as reliable armour for the medium heat flux plasma facing component (PFC).

Deposition and micro electrical discharge machining of CVD-diamond layers incorporated with silicon

Science.gov (United States)

Kühn, R.; Berger, T.; Prieske, M.; Börner, R.; Hackert-Oschätzchen, M.; Zeidler, H.; Schubert, A.

2017-10-01

In metal forming, lubricants have to be used to prevent corrosion or to reduce friction and tool wear. From an economical and ecological point of view, the aim is to avoid the usage of lubricants. For dry deep drawing of aluminum sheets it is intended to apply locally micro-structured wear-resistant carbon based coatings onto steel tools. One type of these coatings are diamond layers prepared by chemical vapor deposition (CVD). Due to the high strength of diamond, milling processes are unsuitable for micro-structuring of these layers. In contrast to this, micro electrical discharge machining (micro EDM) is a suitable process for micro-structuring CVD-diamond layers. Due to its non-contact nature and its process principle of ablating material by melting and evaporating, it is independent of the hardness, brittleness or toughness of the workpiece material. In this study the deposition and micro electrical discharge machining of silicon incorporated CVD-diamond (Si-CVD-diamond) layers were presented. For this, 10 µm thick layers were deposited on molybdenum plates by a laser-induced plasma CVD process (LaPlas-CVD). For the characterization of the coatings RAMAN- and EDX-analyses were conducted. Experiments in EDM were carried out with a tungsten carbide tool electrode with a diameter of 90 µm to investigate the micro-structuring of Si-CVD-diamond. The impact of voltage, discharge energy and tool polarity on process speed and resulting erosion geometry were analyzed. The results show that micro EDM is a suitable technology for micro-structuring of silicon incorporated CVD-diamond layers.

Tungsten

International Nuclear Information System (INIS)

Eschnauer, H.

1978-01-01

There is no substitute for tungsten in its main field of application so that the demand will not decrease, but there is a need for further important applications. If small variations are left out of account, a small but steady increase in the annual tungsten consumption can be expected. The amount of tungsten available will increase due to the exploritation of new deposits and the extension of existing mines. This tendency will probably be increased by the world-wide prospection. It is hard to make an assessment of the amount of tungsten are obtained in the People's Republic of china, the purchases of Eastern countries in the West, and the sales policy of the USA; pice forecasts are therefore hard to make. A rather interesting subject with regard to the tungsten cycle as a whole is the reprocessing of tungsten-containing wastes. (orig.) [de

Effect of location on microstructure and mechanical properties of additive layer manufactured Inconel 625 using gas tungsten arc welding

International Nuclear Information System (INIS)

Wang, J.F.; Sun, Q.J.; Wang, H.; Liu, J.P.; Feng, J.C.

2016-01-01

Additive layer manufacturing (ALM), using gas tungsten arc welding (GTAW) as heat source, is a promising technology in producing Inconel 625 components due to significant cost savings, high deposition rate and convenience of processing. With the purpose of revealing how microstructure and mechanical properties are affected by the location within the manufactured wall component, the present study has been carried out. The manufactured Inconel 625 consists of cellular grains without secondary dendrites in the near-substrate region, columnar dendrites structure oriented upwards in the layer bands, followed by the transition from directional dendrites to equiaxed grain in the top region. With the increase in deposited height, segregation behavior of alloying elements Nb and Mo constantly strengthens with maximal evolution in the top region. The primary dendrite arm spacing has a well coherence with the content of Laves phase. The microhardness and tensile strength show obvious variation in different regions. The microhardness and tensile strength of near-substrate region are superior to that of layer bands and top region. The results are further explained in detail through the weld pool behavior and temperature field measurement.

Effect of location on microstructure and mechanical properties of additive layer manufactured Inconel 625 using gas tungsten arc welding

Energy Technology Data Exchange (ETDEWEB)

Wang, J.F. [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Shandong Provincial Key Laboratory of Special Welding Technology, Harbin Institute of Technology at Weihai, Weihai 264209 (China); Sun, Q.J., E-mail: qjsun@hit.edu.cn [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Shandong Provincial Key Laboratory of Special Welding Technology, Harbin Institute of Technology at Weihai, Weihai 264209 (China); Wang, H. [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Liu, J.P. [Shandong Provincial Key Laboratory of Special Welding Technology, Harbin Institute of Technology at Weihai, Weihai 264209 (China); China Nuclear Industry 23 Construction Co., Ltd., Beijing 101300 (China); Feng, J.C. [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Shandong Provincial Key Laboratory of Special Welding Technology, Harbin Institute of Technology at Weihai, Weihai 264209 (China)

2016-10-31

Additive layer manufacturing (ALM), using gas tungsten arc welding (GTAW) as heat source, is a promising technology in producing Inconel 625 components due to significant cost savings, high deposition rate and convenience of processing. With the purpose of revealing how microstructure and mechanical properties are affected by the location within the manufactured wall component, the present study has been carried out. The manufactured Inconel 625 consists of cellular grains without secondary dendrites in the near-substrate region, columnar dendrites structure oriented upwards in the layer bands, followed by the transition from directional dendrites to equiaxed grain in the top region. With the increase in deposited height, segregation behavior of alloying elements Nb and Mo constantly strengthens with maximal evolution in the top region. The primary dendrite arm spacing has a well coherence with the content of Laves phase. The microhardness and tensile strength show obvious variation in different regions. The microhardness and tensile strength of near-substrate region are superior to that of layer bands and top region. The results are further explained in detail through the weld pool behavior and temperature field measurement.

Development and electrochemical characterization of Ni‐P coated tungsten incorporated electroless nickel coatings

Energy Technology Data Exchange (ETDEWEB)

Shibli, S.M.A., E-mail: smashibli@yahoo.com; Chinchu, K.S.

2016-08-01

Ni‐P-W alloy and composite coatings were prepared by incorporation of sodium tungstate/tungsten and Ni‐P coated tungsten into electroless nickel bath respectively. Good inter-particle interactions among the depositing elements i.e. Ni and P with the incorporating tungsten particles were achieved by means of pre-coated tungsten particle by electroless nickel covering prior to its addition into the electroless bath. The pre-coated tungsten particles got incorporated uniformly into the Ni-P matrix of the coating. The particles and the coatings were characterized at different stages by different techniques including X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectrometry (EDS). The electroless Ni-P coating incorporated with pre-coated tungsten exhibited considerably high hardness, thickness and deposition rate. The performance and corrosion resistance characteristics of the composite coating incorporated with the nickel coated tungsten were found to be superior over other conventional Ni-P-W ternary alloy coatings currently reported. - Highlights: • An amorphous Ni-P coating was effectively formed on tungsten particles. • Electroless ternary Ni-P-W composite coatings were successfully prepared. • Enhancement in the inter-particle interaction in the Ni-P composite matrix was achieved. • Efficient and uniform incorporation of the composite in the internal layer was evident. • The tungsten incorporated coating possessed effective barrier protection.

Kinetics of the tungsten hexafluoride-silane reaction for the chemical vapor deposition of tungsten

International Nuclear Information System (INIS)

Gokce, Huseyin.

1991-01-01

In this study, the kinetics of the low-pressure chemical vapor deposition (LPCVD) of tungsten by silane reduction of tungsten hexafluoride on Si(100) surfaces was studied. A single-wafer, cold-wall reactor was sued for the experiments. The SiH 4 /WF 6 ratio was 1.0. The pressure and temperature range were 1-10 torr and 137-385 degree C, respectively. Kinetic data were obtained in the absence of mass-transfer effects. The film thicknesses were measured by gravimetry. Scanning electron microscopy (SEM), Auger electron spectroscopy (AES), x-ray diffraction (XRD), and resistivity measurements were used to analyze the W films. For the horizontal substrate position and 4-minute reaction times, the apparent activation energies were determined to be 0.35 eV/atom for 10 torr, 0.17 eV/atom for 3 torr, and 0.08 eV/atom for 1 torr. Lower temperatures and higher pressures produced porous films, while higher temperatures and lower pressures resulted in continuous films with smoother surfaces. As the Si-W interface, a W(110) preferential orientation was observed. As the W films grew thicker, W orientation switched from (110) to (100). Apparent activation energy seems to change with thickness

Simulation of cracks in tungsten under ITER specific heat loads

International Nuclear Information System (INIS)

Peschany, S.

2006-01-01

The problem of high tritium retention in co-deposited carbon layers on the walls of ITER vacuum chamber motivates investigation of materials for the divertor armour others than carbon fibre composite (CFC). Tungsten is most probable material for CFC replacement as the divertor armour because of high vaporisation temperature and heat conductivity. In the modern ITER design tungsten is a reference material for the divertor cover, except for the separatrix strike point armoured with CFC. As divertor armour, tungsten should withstand severe heat loads at off-normal ITER events like disruptions, ELMs and vertical displacement events. Experiments on tungsten heating with plasma streams and e-beams have shown an intense crack formation at the surface of irradiated sample [ V.I. Tereshin, A.N. Bandura, O.V. Byrka et al. Repetitive plasma loads typical for ITER type-I ELMs: Simulation at QSPA Kh-50.PLASMA 2005. ed. By Sadowski M.J., AIP Conference Proceedings, American Institute of Physics, 2006, V 812, p. 128-135., J. Linke. Private communications.]. The reason for tungsten cracking under severe heat loads is thermo stress. It appears as due to temperature gradient in solid tungsten as in resolidified layer after cooling down. Both thermo stresses are of the same value, but the gradiental stress is compressive and the stress in the resolidified layer is tensile. The last one is most dangerous for crack formation and it was investigated in this work. The thermo stress in tungsten that develops during cooling from the melting temperature down to room temperature is ∼ 8-16 GPa. Tensile strength of tungsten is much lower, < 1 GPa at room temperature, and at high temperatures it drops at least for one order of magnitude. As a consequence, various cracks of different characteristic scales appear at the heated surface of the resolidified layer. For simulation of the cracks in tungsten the numeric code PEGASUS-3D [Pestchanyi and I. Landman. Improvement of the CFC structure to

Cu and Cu(Mn) films deposited layer-by-layer via surface-limited redox replacement and underpotential deposition

Energy Technology Data Exchange (ETDEWEB)

Fang, J.S., E-mail: jsfang@nfu.edu.tw [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Sun, S.L. [Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan (China); Cheng, Y.L. [Department of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, Taiwan (China); Chen, G.S.; Chin, T.S. [Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan (China)

2016-02-28

Graphical abstract: - Abstract: The present paper reports Cu and Cu(Mn) films prepared layer-by-layer using an electrochemical atomic layer deposition (ECALD) method. The structure and properties of the films were investigated to elucidate their suitability as Cu interconnects for microelectronics. Previous studies have used primarily a vacuum-based atomic layer deposition to form a Cu metallized film. Herein, an entirely wet chemical process was used to fabricate a Cu film using the ECALD process by combining underpotential deposition (UPD) and surface-limited redox replacement (SLRR). The experimental results indicated that an inadequate UPD of Pb affected the subsequent SLRR of Cu and lead to the formation of PbSO{sub 4}. A mechanism is proposed to explain the results. Layer-by-layer deposition of Cu(Mn) films was successfully performed by alternating the deposition cycle-ratios of SLRR-Cu and UPD-Mn. The proposed self-limiting growth method offers a layer-by-layer wet chemistry-based deposition capability for fabricating Cu interconnects.

Melt layer macroscopic erosion of tungsten and other metals under plasma heat loads simulating ITER off-normal events

International Nuclear Information System (INIS)

Garkusha, I.E.; Bandura, A.N.; Byrka, O.V.; Kulik, N.V.; Landman, I.; Wuerz, H.

2002-01-01

This paper is focused on experimental analysis of metal layer erosion and droplet splashing of tungsten and other metals under heat loads typical for ITER FEAT off-normal events,such as disruptions and VDE's. Plasma pressure gradient action on melt layer results in erosion crater formation with mountains of displaced material at the crater edge. It is shown that macroscopic motion of melt layer and surface cracking are the main factors responsible for tungsten damage. Weight loss measurements of all exposed materials demonstrate inessential contribution of evaporation process to metals erosion

Influence of Cooling Rate in High-Temperature Area on Hardening of Deposited High-Cutting Chrome-Tungsten Metal

OpenAIRE

Malushin, N. N.; Valuev, Denis Viktorovich; Valueva, Anna Vladimirovna; Serikbol, A.; Borovikov, I. F.

2015-01-01

The authors study the influence of cooling rate in high-temperature area for thermal cycle of high-cutting chrome-tungsten metal weld deposit on the processes of carbide phase merging and austenite grain growth for the purpose of providing high hardness of deposited metal (HRC 64-66).

GENERATION, TRANSPORT AND DEPOSITION OF TUNGSTEN-OXIDE AEROSOLS AT 1000 C IN FLOWING AIR-STEAM MIXTURES.

Energy Technology Data Exchange (ETDEWEB)

GREENE,G.A.; FINFROCK,C.C.

2001-10-01

Experiments were conducted to measure the rates of oxidation and vaporization of pure tungsten rods in flowing air, steam and air-steam mixtures in laminar flow. Also measured were the downstream transport of tungsten-oxide condensation aerosols and their region of deposition, including plateout in the superheated flow tube, rainout in the condenser and ambient discharge which was collected on an array of sub-micron aerosol filters. The nominal conditions of the tests, with the exception of the first two tests, were tungsten temperatures of 1000 C, gas mixture temperatures of 200 C and wall temperatures of 150 C to 200 C. It was observed that the tungsten oxidation rates were greatest in all air and least in all steam, generally decreasing non-linearly with increasing steam mole fraction. The tungsten oxidation rates in all air were more than five times greater than the tungsten oxidation rates in all steam. The tungsten vaporization rate was zero in all air and increased with increasing steam mole fraction. The vaporization rate became maximum at a steam mole fraction of 0.85 and decreased thereafter as the steam mole fraction was increased to unity. The tungsten-oxide was transported downstream as condensation aerosols, initially flowing upwards from the tungsten rod through an 18-inch long, one-inch diameter quartz tube, around a 3.5-inch radius, 90{sup o} bend and laterally through a 24-inch horizontal run. The entire length of the quartz glass flow path was heated by electrical resistance clamshell heaters whose temperatures were individually controlled and measured. The tungsten-oxide plateout in the quartz tube was collected, nearly all of which was deposited at the end of the heated zone near the entrance to the condenser which was cold. The tungsten-oxide which rained out in the condenser as the steam condensed was collected with the condensate and weighed after being dried. The aerosol smoke which escaped the condenser was collected on the sub

Influence of Cooling Rate in High-Temperature Area on Hardening of Deposited High-Cutting Chrome-Tungsten Metal

International Nuclear Information System (INIS)

Malushin, N N; Valuev, D V; Valueva, A V; Serikbol, A; Borovikov, I F

2015-01-01

The authors study the influence of cooling rate in high-temperature area for thermal cycle of high-cutting chrome-tungsten metal weld deposit on the processes of carbide phase merging and austenite grain growth for the purpose of providing high hardness of deposited metal (HRC 64-66). (paper)

Effects of oxygen addition in reactive cluster beam deposition of tungsten by magnetron sputtering with gas aggregation

Energy Technology Data Exchange (ETDEWEB)

Polášek, J., E-mail: xpolasekj@seznam.cz [Department of Surface and Plasma Science, Faculty of Mathematics and Physic, Charles University, V Holešovičkách 2, Prague 8, CZ-18000 (Czech Republic); Mašek, K. [Department of Surface and Plasma Science, Faculty of Mathematics and Physic, Charles University, V Holešovičkách 2, Prague 8, CZ-18000 (Czech Republic); Marek, A.; Vyskočil, J. [HVM Plasma Ltd., Na Hutmance 2, Prague 5, CZ-158 00 (Czech Republic)

2015-09-30

In this work, we investigated the possibilities of tungsten and tungsten oxide nanoclusters generation by means of non-reactive and reactive magnetron sputtering with gas aggregation. It was found that in pure argon atmosphere, cluster aggregation proceeded in two regimes depending on argon pressure in the aggregation chamber. At the lower pressure, cluster generation was dominated by two-body collisions yielding larger clusters (about 5.5 nm in diameter) at lower rate. At higher pressures, cluster generation was dominated by three-body collisions yielding smaller clusters (3–4 nm in diameter) at higher rate. The small amount of oxygen admixture in the aggregation chamber had considerable influence on cluster aggregation process. At certain critical pressure, the presence of oxygen led to the raise of deposition rate and cluster size. Resulting clusters were composed mostly of tungsten trioxide. The oxygen pressure higher than critical led to the target poisoning and the decrease in the sputtering rate. Critical oxygen pressure decreased with increasing argon pressure, suggesting that cluster aggregation process was influenced by atomic oxygen species (namely, O{sup −} ion) generated by oxygen–argon collisions in the magnetron plasma. - Highlights: • Formation of tungsten and tungsten oxide clusters was observed. • Two modes of cluster aggregation in pure argon atmosphere were found. • Dependence of cluster deposition speed and size on oxygen admixture was observed. • Changes of dependence on oxygen with changing argon pressure were described.

Effects of oxygen addition in reactive cluster beam deposition of tungsten by magnetron sputtering with gas aggregation

International Nuclear Information System (INIS)

Polášek, J.; Mašek, K.; Marek, A.; Vyskočil, J.

2015-01-01

In this work, we investigated the possibilities of tungsten and tungsten oxide nanoclusters generation by means of non-reactive and reactive magnetron sputtering with gas aggregation. It was found that in pure argon atmosphere, cluster aggregation proceeded in two regimes depending on argon pressure in the aggregation chamber. At the lower pressure, cluster generation was dominated by two-body collisions yielding larger clusters (about 5.5 nm in diameter) at lower rate. At higher pressures, cluster generation was dominated by three-body collisions yielding smaller clusters (3–4 nm in diameter) at higher rate. The small amount of oxygen admixture in the aggregation chamber had considerable influence on cluster aggregation process. At certain critical pressure, the presence of oxygen led to the raise of deposition rate and cluster size. Resulting clusters were composed mostly of tungsten trioxide. The oxygen pressure higher than critical led to the target poisoning and the decrease in the sputtering rate. Critical oxygen pressure decreased with increasing argon pressure, suggesting that cluster aggregation process was influenced by atomic oxygen species (namely, O"− ion) generated by oxygen–argon collisions in the magnetron plasma. - Highlights: • Formation of tungsten and tungsten oxide clusters was observed. • Two modes of cluster aggregation in pure argon atmosphere were found. • Dependence of cluster deposition speed and size on oxygen admixture was observed. • Changes of dependence on oxygen with changing argon pressure were described.

Thermal stability of atomic layer deposited WCxNy electrodes for metal oxide semiconductor devices

Science.gov (United States)

Zonensain, Oren; Fadida, Sivan; Fisher, Ilanit; Gao, Juwen; Danek, Michal; Eizenberg, Moshe

2018-01-01

This study is a thorough investigation of the chemical, structural, and electrical stability of W based organo-metallic films, grown by atomic layer deposition, for future use as gate electrodes in advanced metal oxide semiconductor structures. In an earlier work, we have shown that high effective work-function (4.7 eV) was produced by nitrogen enriched films (WCxNy) dominated by W-N chemical bonding, and low effective work-function (4.2 eV) was produced by hydrogen plasma resulting in WCx films dominated by W-C chemical bonding. In the current work, we observe, using x-ray diffraction analysis, phase transformation of the tungsten carbide and tungsten nitride phases after 900 °C annealing to the cubic tungsten phase. Nitrogen diffusion is also observed and is analyzed with time-of-flight secondary ion mass spectroscopy. After this 900 °C anneal, WCxNy effective work function tunability is lost and effective work-function values of 4.7-4.8 eV are measured, similar to stable effective work function values measured for PVD TiN up to 900 °C anneal. All the observed changes after annealing are discussed and correlated to the observed change in the effective work function.

Structure of tungsten electrodeposited from oxide chloride-fluoride molten salts

International Nuclear Information System (INIS)

Pavlovskij, V.A.; Reznichenko, V.A.

1998-01-01

Investigation results on the influence of electrolysis parameters and electrolyte composition on tungsten cathode deposit structure are presented. The electrolysis was performed in NaCl-NaF-WO 3 molten salts using tungsten and tungsten coated molybdenum cathodes. Morphological and metallographic studies of tungsten crystals were carrier out. Tungsten deposits were obtained in the form of crystalline conglomerates, sponge and high dispersity powder

Migration and deposition of 13C in the full-tungsten ASDEX Upgrade tokamak

International Nuclear Information System (INIS)

Hakola, A; Aho-Mantila, L; Groth, M; Kurki-Suonio, T; Makkonen, T; Likonen, J; Koivuranta, S; Krieger, K; Mayer, M; Mueller, H W; Neu, R; Rohde, V

2010-01-01

The migration of carbon in low-density, low-confinement plasmas of ASDEX Upgrade was studied by injecting 13 C into the main chamber of the torus at the end of the 2007 experimental campaign. A selection of standard tungsten-coated lower-divertor and main-chamber tiles as well as a complete set of lower-divertor tiles with an uncoated poloidal marker stripe were removed from one poloidal cross section and analysed using secondary ion mass spectrometry. The poloidal deposition profiles of 13 C on both the tungsten-coated tiles and on the uncoated graphite areas of the marker tiles were measured and compared. For the W-coated lower-divertor tiles, 13 C was deposited mainly on the high-field side tiles, while barely detectable amounts of 13 C were observed on low-field side samples. In contrast, on the uncoated marker stripes the deposition was equally pronounced in the high-field and low-field side divertor. The marker-tile results are in agreement with those obtained from graphite tiles after the 2003 and 2005 13 C experiments in ASDEX Upgrade. In the case of W-coated tiles, the 13 C measurements were complemented by determining the total amount of deposited carbon ( 12 C) on the tiles, which also shows strong deposition at the inner parts of the lower divertor. The estimated deposition of 13 C on W at the divertor areas was less than 1.5% of the injected amount of 13 C atoms. The 13 C analyses of the main-chamber tiles and small silicon samples mounted in remote areas revealed significant deposition in the upper divertor, in upper parts of the heat shield, in the limiter region close to the injection valve, and below the roof baffle. Approximately 8% of the injected 13 C is estimated to have accumulated in these regions. Possible reasons for the different deposition patterns on W and on graphite in different regions of the torus are discussed.

Hot-wire substoichiometric tungsten oxide films deposited in hydrogen environment with n-type conductivity

International Nuclear Information System (INIS)

Kostis, I; Vasilopoulou, M; Giannakopoulos, K; Papadimitropoulos, G; Davazoglou, D; Michalas, L; Papaioannou, G; Konofaos, N; Iliadis, A A; Kennou, S

2012-01-01

Substoichiometric tungsten oxide nanostructured films were synthesized by a hot-wire deposition technique in hydrogen-rich environment and characterized for their structural and electrical properties. A semiconducting behaviour was identified, allowing n-type conductivity even at room temperature which is an important result since it is well known that fully stoichiometric tungsten trioxide is nearly an insulator. Current-voltage characteristics for various temperatures were measured for tungsten oxide/Si heterostructures and analysed using proper modelling. As a result, the conduction mechanism inside the films was identified and found to be of a dual nature, with variable range hopping being dominant at near room temperatures. The saturation current was found to be thermally activated and the activation energy was calculated at 0.40 eV and the grain boundaries barrier at 150 meV. From Hall measurements it was also revealed that the dominant carriers are electrons and a carrier concentration of about 10 14 cm -3 was estimated.

Electro-chemically-based technologies for processing of tungsten components in fusion technology

International Nuclear Information System (INIS)

Holstein, N.; Konys, J.; Krauss, W.; Lorenz, J.

2010-01-01

In fusion technology layers and bulk components fabricated from tungsten and W-alloys are used as functional materials, e.g. as coatings of blanket modules or T-permeation barriers and also as structural components in a He-cooled divertor. Their application under high heat loads and temperatures is besides manufacturing, also challenging regarding joining, caused e.g. by expansion mismatches in combination with steel or other diffusion issues. Driven by these needs, electro-chemically-based technologies were analyzed concerning their advantages in processing in the fields of soft structuring of tungsten alloys and in deposition of functional scales. The Electro-Chemistry (EC) of tungsten is characterized by its affection to build up passivation layers in aqueous media during the initial oxidation, which is the result of an unavoidable basic electrochemical reaction with water (W + 3H 2 O → WO 3 + 3H 2 ), although the element standard potential is situated between common EC material like iron and copper. (orig.)

Tungsten oxide nanowires grown on amorphous-like tungsten films

International Nuclear Information System (INIS)

Dellasega, D; Pezzoli, A; Russo, V; Passoni, M; Pietralunga, S M; Nasi, L; Conti, C; Vahid, M J; Tagliaferri, A

2015-01-01

Tungsten oxide nanowires have been synthesized by vacuum annealing in the range 500–710 °C from amorphous-like tungsten films, deposited on a Si(100) substrate by pulsed laser deposition (PLD) in the presence of a He background pressure. The oxygen required for the nanowires formation is already adsorbed in the W matrix before annealing, its amount depending on deposition parameters. Nanowire crystalline phase and stoichiometry depend on annealing temperature, ranging from W_1_8O_4_9-Magneli phase to monoclinic WO_3. Sufficiently long annealing induces the formation of micrometer-long nanowires, up to 3.6 μm with an aspect ratio up to 90. Oxide nanowire growth appears to be triggered by the crystallization of the underlying amorphous W film, promoting their synthesis at low temperatures. (paper)

Underpotential deposition-mediated layer-by-layer growth of thin films

Science.gov (United States)

Wang, Jia Xu; Adzic, Radoslav R.

2015-05-19

A method of depositing contiguous, conformal submonolayer-to-multilayer thin films with atomic-level control is described. The process involves the use of underpotential deposition of a first element to mediate the growth of a second material by overpotential deposition. Deposition occurs between a potential positive to the bulk deposition potential for the mediating element where a full monolayer of mediating element forms, and a potential which is less than, or only slightly greater than, the bulk deposition potential of the material to be deposited. By cycling the applied voltage between the bulk deposition potential for the mediating element and the material to be deposited, repeated desorption/adsorption of the mediating element during each potential cycle can be used to precisely control film growth on a layer-by-layer basis. This process is especially suitable for the formation of a catalytically active layer on core-shell particles for use in energy conversion devices such as fuel cells.

Achieving uniform layer deposition by atmospheric-pressure plasma-enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Lee, Jae-Ok [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Kang, Woo Seok, E-mail: kang@kimm.re.kr [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of); Hur, Min; Lee, Jin Young [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Song, Young-Hoon [Department of Plasma Engineering, Korea Institute of Machinery & Materials (KIMM), Daejeon 305-343 (Korea, Republic of); Department of Environment & Energy Mechanical Engineering, University of Science & Technology (UST), Daejeon 305-350 (Korea, Republic of)

2015-12-31

This work investigates the use of plasma-enhanced chemical vapor deposition under atmospheric pressure for achieving uniform layer formation. Electrical and optical measurements demonstrated that the counterbalance between oxygen and precursors maintained the homogeneous discharge mode, while creating intermediate species for layer deposition. Several steps of the deposition process of the layers, which were processed on a stationary stage, were affected by flow stream and precursor depletion. This study showed that by changing the flow streamlines using substrate stage motion uniform layer deposition under atmospheric pressure can be achieved. - Highlights: • Zirconium oxide was deposited by atmospheric-pressure plasma-enhanced chemical vapor deposition. • Homogeneous plasma was maintained by counterbalancing between discharge gas and precursors. • Several deposition steps were observed affected by the gas flow stream and precursor depletion. • Thin film layer was uniformly grown when the substrate underwent a sweeping motion.

Thermal conductivity of nitride films of Ti, Cr, and W deposited by reactive magnetron sputtering

International Nuclear Information System (INIS)

Jagannadham, Kasichainula

2015-01-01

Nitride films of Ti, Cr, and W were deposited using reactive magnetron sputtering from metal targets in argon and nitrogen plasma. TiN films with (200) orientation were achieved on silicon (100) at the substrate temperature of 500 and 600 °C. The films were polycrystalline at lower temperature. An amorphous interface layer was observed between the TiN film and Si wafer deposited at 600 °C. TiN film deposited at 600 °C showed the nitrogen to Ti ratio to be near unity, but films deposited at lower temperature were nitrogen deficient. CrN film with (200) orientation and good stoichiometry was achieved at 600 °C on Si(111) wafer but the film deposited at 500 °C showed cubic CrN and hexagonal Cr 2 N phases with smaller grain size and amorphous back ground in the x-ray diffraction pattern. An amorphous interface layer was not observed in the cubic CrN film on Si(111) deposited at 600 °C. Nitride film of tungsten deposited at 600 °C on Si(100) wafer was nitrogen deficient, contained both cubic W 2 N and hexagonal WN phases with smaller grain size. Nitride films of tungsten deposited at 500 °C were nonstoichiometric and contained cubic W 2 N and unreacted W phases. There was no amorphous phase formed along the interface for the tungsten nitride film deposited at 600 °C on the Si wafer. Thermal conductivity and interface thermal conductance of all the nitride films of Ti, Cr, and W were determined by transient thermoreflectance technique. The thermal conductivity of the films as function of deposition temperature, microstructure, nitrogen stoichiometry and amorphous interaction layer at the interface was determined. Tungsten nitride film containing both cubic and hexagonal phases was found to exhibit much higher thermal conductivity and interface thermal conductance. The amorphous interface layer was found to reduce effective thermal conductivity of TiN and CrN films

Morpho-Structural Characterization of WC20Co Deposited Layers

Science.gov (United States)

Tugui, C. A.; Vizureanu, P.

2017-06-01

Hydroelectric power plants use the power of water to produce electricity. In this paper we propose a solution that will increase the efficiency of turbine operation by implementing new innovative technologies to increase the working characteristics by depositing hard thin films of tungsten carbide. For this purpose hard tough deposits with WC20Co and Jet Plasma Jet on X3CrNiMo13-4 stainless steel were used for the realization of the Francis turbine with vertical shaft.

Atomic layer deposition of W{sub x}N/TiN and WN{sub x}C{sub y}/TiN nanolaminates

Energy Technology Data Exchange (ETDEWEB)

Elers, K.-E.; Saanila, V.; Li, W.-M.; Soininen, P.J.; Kostamo, J.T.; Haukka, S.; Juhanoja, J.; Besling, W.F.A

2003-06-23

Diffusion barrier materials, such as TiN, W{sub x}N, WN{sub x}C{sub y} and their nanolaminates were deposited by atomic layer deposition method. TiN film exhibited excellent properties, but W{sub x}N film exhibited high resistivity despite the low residue concentration. Both TiN and W{sub x}N films suffered from serious incompatibility with the copper metal. WN{sub x}C{sub y} film was deposited by introducing triethylboron as a reducing agent for tungsten. Excellent film properties were obtained, including very good compatibility with the copper metal, evident as strong adhesion and no pitting on the copper surface. Nanolaminate barrier stacks of W{sub x}N/TiN and WN{sub x}C{sub y}/TiN were successfully deposited. TiN deposition did not cause copper pitting when thin WN{sub x}C{sub y} film was deposited underneath.

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

Directory of Open Access Journals (Sweden)

Yu-Kuang Liao

2017-04-01

Full Text Available Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD and chemical bath deposition (CBD as used by the Cu(In,GaSe2 (CIGS thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase.

Titanium tungsten coatings for bioelectrochemical applications

DEFF Research Database (Denmark)

Wierzbicki, Rafal; Amato, Letizia; Łopacińska, J.

2011-01-01

This paper presents an assessment of titanium tungsten (TiW) coatings and their applicability as components of biosensing systems. The focus is put on using TiW as an electromechanical interface layer between carbon nanotube (CNT) forests and silicon nanograss (SiNG) cell scaffolds. Cytotoxicity......, applicability to plasma-enhanced chemical vapor deposition (PECVD) of aligned CNT forests, and electrochemical performance are investigated. Experiments include culturing of NIH3T3 mouse embryonic fibroblast cells on TiW coated silicon scaffolds, CNT growth on TiW substrates with nickel catalyst, and cyclic...

Spatial atomic layer deposition: a route towards further industrialization of atomic layer deposition

NARCIS (Netherlands)

Poodt, P.; Cameron, D.C.; Dickey, E.; George, S.M.; Kuznetsov, Vladimir; Parsons, G.N.; Roozeboom, F.; Sundaram, G.; Vermeer, A.

2012-01-01

Spatial atomic layer deposition can be used as a high-throughput manufacturing technique in functional thin film deposition for applications such as flexible electronics. This; however, requires low-temperature processing and handling of flexible substrates. The authors investigate the process

Atomistic calculation of size effects on elastic coefficients in nanometre-sized tungsten layers and wires

International Nuclear Information System (INIS)

Villain, P.; Beauchamp, P.; Badawi, K.F.; Goudeau, P.; Renault, P.-O.

2004-01-01

Equilibrium state and elastic coefficients of nanometre-sized single crystal tungsten layers and wires are investigated by atomistic simulations. The variations of the equilibrium distances as a function of the layer thickness or wire cross-section are mainly due to elastic effects of surface tension forces. A strong decrease of the Young's modulus is observed when the transverse dimensions are reduced below 2-3 nm

Influence of annealing conditions on anodic tungsten oxide layers and their photoelectrochemical activity

International Nuclear Information System (INIS)

Syrek, Karolina; Zych, Marta; Zaraska, Leszek; Sulka, Grzegorz D.

2017-01-01

Highlights: • Effect of annealing temperature on the morphology and crystalline structure of anodic WO 3 was investigated. • Photoelectrochemical properties of WO 3 layers annealed at different temperatures were studied. • Edges of conduction and valence bands were estimated for tungsten oxide layers annealed at different temperatures. • Influence of annealing time on crystalline structure, morphology and photoelectrochemical performance was studied. - Abstract: The nanoporous tungsten oxide films having an amorphous structure were prepared in an electrolyte containing fluoride ions via an anodization process. The as-synthesized anodic oxide layers can be easily converted to the monoclinic WO 3 phase upon annealing in air. The as-synthesized and annealed WO 3 layers were investigated by using X-ray diffraction, scanning electron microscopy, and photocurrent spectroscopy. The effect of annealing temperature and annealing time on the oxide morphology, crystal structure and electrochemical properties were studied. The samples were annealed in air at the temperatures ranging from 400 to 600 °C, and it was found that the original porous morphology of oxide is completely lost after annealing at 600 °C. The changes in the average crystallite sizes upon annealing were confirmed by XRD measurements. The photoelectrochemical performance of the annealed WO 3 layers were studied under pulsed UV illumination, and the highest photocurrents were observed at the incident light wavelength of 350 nm for the sample annealed at 500 °C for 2 h. The band gap energy and the positions of conduction and valence band edges were determined for all studied samples.

SEM and XPS study of layer-by-layer deposited polypyrrole thin films

Science.gov (United States)

Pigois-Landureau, E.; Nicolau, Y. F.; Delamar, M.

1996-01-01

Layer-by-layer deposition of thin films (a few nm) of polypyrrole was carried out on various substrates such as silver, platinum, electrochemically oxidized aluminum and pretreated glass. SEM micrographs showed that the deposited layers nucleate by an island-type mechanism on hydrated alumina and KOH-pretreated (hydrophilic) glass before forming a continuous film. However, continuous thin films are obtained on chromic acid pretreated (hydrophobic) glass and sputtered Ag or Pt on glass after only 3-4 deposition cycles. The mean deposition rate evaluated by XPS for the first deposition cycles on Ag and Pt is 3 and 4 nm/cycle, respectively, in agreement with previous gravimetric determinations on thicker films, proving the constancy of the deposition rate. The XPS study of the very thin films obtained by a few deposition cycles shows that the first polypyrrole layers are dedoped by hydroxydic (basic) substrate surfaces.

SEM and XPS study of layer-by-layer deposited polypyrrole thin films

International Nuclear Information System (INIS)

Pigois-Landureau, E.; Nicolau, Y.F.; Delamar, M.

1996-01-01

Layer-by-layer deposition of thin films (a few nm) of polypyrrole was carried out on various substrates such as silver, platinum, electrochemically oxidized aluminum and pretreated glass. SEM micrographs showed that the deposited layers nucleate by an island-type mechanism on hydrated alumina and KOH-pretreated (hydrophilic) glass before forming a continuous film. However, continuous thin films are obtained on chromic acid pretreated (hydrophobic) glass and sputtered Ag or Pt on glass after only 3 endash 4 deposition cycles. The mean deposition rate evaluated by XPS for the first deposition cycles on Ag and Pt is 3 and 4 nm/cycle, respectively, in agreement with previous gravimetric determinations on thicker films, proving the constancy of the deposition rate. The XPS study of the very thin films obtained by a few deposition cycles shows that the first polypyrrole layers are dedoped by hydroxydic (basic) substrate surfaces. copyright 1996 American Institute of Physics

Suspended tungsten-based nanowires with enhanced mechanical properties grown by focused ion beam induced deposition

Science.gov (United States)

Córdoba, Rosa; Lorenzoni, Matteo; Pablo-Navarro, Javier; Magén, César; Pérez-Murano, Francesc; María De Teresa, José

2017-11-01

The implementation of three-dimensional (3D) nano-objects as building blocks for the next generation of electro-mechanical, memory and sensing nano-devices is at the forefront of technology. The direct writing of functional 3D nanostructures is made feasible by using a method based on focused ion beam induced deposition (FIBID). We use this technique to grow horizontally suspended tungsten nanowires and then study their nano-mechanical properties by three-point bending method with atomic force microscopy. These measurements reveal that these nanowires exhibit a yield strength up to 12 times higher than that of the bulk tungsten, and near the theoretical value of 0.1 times the Young’s modulus (E). We find a size dependence of E that is adequately described by a core-shell model, which has been confirmed by transmission electron microscopy and compositional analysis at the nanoscale. Additionally, we show that experimental resonance frequencies of suspended nanowires (in the MHz range) are in good agreement with theoretical values. These extraordinary mechanical properties are key to designing electro-mechanically robust nanodevices based on FIBID tungsten nanowires.

Vapor-transport of tungsten and its geologic application

Energy Technology Data Exchange (ETDEWEB)

Shibue, Y [Hyogo Univ. of Teacher Education, Hyogo (Japan)

1988-11-10

The volatility of tungsten in a hydrous system at elevated temperatures and pressures was examined, and a tentative model for the enrichment of tungsten in hydrothermal solutions for the deposits related to granitic activities was proposed. To produce vapor-saturated solution, 17 or 15ml of 20wt% NaCl solution was introduced into an autoclave. Ca(OH){sub 2} for tungsten and H{sub 2}WO{sub 4} for base metals were used as vapor-captures, and run products were identified by X-ray powder diffractometry. The results suggested that the ratio of tungsten to base metals was higher in a vapor phase than in a liquid phase, and more enrichment of tungsten in the vapor phase occurred at higher temperature and pressure under the coexistence of the vapor and liquid phase. The tentative model emphasizing the vapor-transport of tungsten could explain the presence of tungsten deposits without large mineralization of base metals. Geological schematic model for the generation of the hydrothermal solution enriched in tungsten compared with base metals was illustrated based on above mentioned results. 21 refs., 3 figs.

OEDGE Modeling of Collector Probe measurements in L-mode from the DIII-D tungsten ring campaign

Science.gov (United States)

Elder, J. D.; Stangeby, P. C.; Unterberg, Z.; Donovan, D.; Wampler, W. R.; Watkins, J.; Abrams, T.; McLean, A. G.

2017-10-01

During the tungsten ring campaign on DIII-D, a collector probe system with multiple diameter, dual-facing collector rods was inserted into the far scrape off layer (SOL) near the outer midplane to measure the plasma tungsten content. For most probes more tungsten was observed on the side connected along field lines to the inner divertor, with the larger probes showing largest divertor-facing asymmetries The OEDGE code is used to model the tungsten erosion, transport and deposition. It has been enhanced with (i) a peripheral particle transport and deposition model to record the impurity content in the peripheral region outside the regular mesh, and (ii) a collector probe model. The OEDGE results approximately reproduce both the divertor-facing asymmetries and the radial decay of each collector probe profile. The effect of changing impurity transport assumptions and wall location are examined. The measured divertor-facing asymmetries imply a higher tungsten density in the plasma upstream of the probe; this was expected theoretically from the effect of the parallel ion temperature gradient force driving upstream transport of tungsten from the outer divertor and was also found in the code analysis. Work supported by the US Department of Energy under DE-FC02-04ER54698, DE-NA0003525, DE-AC05-00OR22725, and DE-AC52-07NA27344.

Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering

NARCIS (Netherlands)

Yan, L.T.; Schropp, R.E.I.

2011-01-01

Tungsten- and titanium-doped indium oxide (IWO and ITiO) filmswere deposited at room temperature by radio frequency (RF) magnetron sputtering, and vacuum post-annealing was used to improve the electron mobility. With increasing deposition power, the as deposited films showed an increasingly

Enhanced properties of tungsten thin films deposited with a novel HiPIMS approach

Science.gov (United States)

Velicu, Ioana-Laura; Tiron, Vasile; Porosnicu, Corneliu; Burducea, Ion; Lupu, Nicoleta; Stoian, George; Popa, Gheorghe; Munteanu, Daniel

2017-12-01

Despite the tremendous potential for industrial use of tungsten (W), very few studies have been reported so far on controlling and tailoring the properties of W thin films obtained by physical vapor deposition techniques and, even less, for those deposited by High Power Impulse Magnetron Sputtering (HiPIMS). This study presents results on the deposition process and properties characterization of nanocrystalline W thin films deposited on silicon and molybdenum substrates (100 W average sputtering power) by conventional dc magnetron sputtering (dcMS) and HiPIMS techniques. Topological, structural, mechanical and tribological properties of the deposited thin films were investigated. It was found that in HiPIMS, both deposition process and coatings properties may be optimized by using an appropriate magnetic field configuration and pulsing design. Compared to the other deposited samples, the W films grown in multi-pulse (5 × 3 μs) HiPIMS assisted by an additional magnetic field, created with a toroidal-shaped permanent magnet placed in front of the magnetron cathode, show significantly enhanced properties, such as: smoother surfaces, higher homogeneity and denser microstructure, higher hardness and Young's modulus values, better adhesion to the silicon substrate and lower coefficient of friction. Mechanical behaviour and structural changes are discussed based on plasma diagnostics results.

All-optical phase shifter and switch near 1550nm using tungsten disulfide (WS2) deposited tapered fiber.

Science.gov (United States)

Wu, Kan; Guo, Chaoshi; Wang, Hao; Zhang, Xiaoyan; Wang, Jun; Chen, Jianping

2017-07-24

All-optical phase shifters and switches play an important role for various all-optical applications including all-optical signal processing, sensing and communication. In this paper, we demonstrate a fiber all-optical phase shifter using few-layer 2D material tungsten disulfide (WS 2 ) deposited on a tapered fiber. WS 2 absorbs injected 980 nm pump (control light) and generates heat, which changes the refractive index of both WS 2 and tapered fiber due to thermo-optic effect and achieves a maximum phase shift of 6.1π near 1550 nm. The device has a loss of 3.7 dB. By constructing a Mach-Zehnder interferometer with WS 2 based phase shifter in one arm, an all-optical switch is also obtained with an extinction ratio of 15 dB and a rise time of 7.3 ms. This all fiber low-cost and compact optical phase shifter and switch demonstrates the potential of 2D transition metal dichalcogenides for all-optical signal processing devices.

Differences in Nanosecond Laser Ablation and Deposition of Tungsten, Boron, and WB2/B Composite due to Optical Properties

Directory of Open Access Journals (Sweden)

Tomasz Moscicki

2016-01-01

Full Text Available The first attempt to the deposition of WB3 films using nanosecond Nd:YAG laser demonstrated that deposited coatings are superhard. However, they have very high roughness. The deposited films consisted mainly of droplets. Therefore, in the present work, the explanation of this phenomenon is conducted. The interaction of Nd:YAG nanosecond laser pulse with tungsten, boron, and WB2/B target during ablation is investigated. The studies show the fundamental differences in ablation of those materials. The ablation of tungsten is thermal and occurs due to only evaporation. In the same conditions, during ablation of boron, the phase explosion and/or fragmentation due to recoil pressure is observed. The deposited films have a significant contribution of big debris with irregular shape. In the case of WB2/B composite, ablation is significantly different. The ablation seems to be the detonation in the liquid phase. The deposition mechanism is related mainly to the mechanical transport of the target material in the form of droplets, while the gaseous phase plays marginal role. The main origin of differences is optical properties of studied materials. A method estimating phase explosion occurrence based on material data such as critical temperature, thermal diffusivity, and optical properties is shown. Moreover, the effect of laser wavelength on the ablation process and the quality of the deposited films is discussed.

Color in 'tungsten trioxide' thin films

International Nuclear Information System (INIS)

Gerard, P.; Deneuville, A.; Hollinger, G.; Duc, Tran Minh

1977-01-01

We show that evaporated tungsten trioxide amorphous layers commonly used in electrochromic displays actually have the composition WO_2_._7H_y (0.2< y<0.5). We emphasize that coloration of virgin transparent films can be obtained without injection of any external ion into the layer, and further that around a critical substoichiometry by sputtering, namely, WO_2_._5, one can prepare blue virgin layers without any hydrogen. The effect of substoichiometry on the valence of tungsten atoms has been followed by XPS measurements of sputtered layers.

Color in ''tungsten trioxide'' thin films

International Nuclear Information System (INIS)

Gerard, P.; Deneuville, A.; Hollinger, G.; Tran Minh Duc

1977-01-01

We show that evaporated tungsten trioxide amorphous layers commonly used in electrochromic displays actually have the composition WO/sub 2.7/H/sub y/ (0.2< y<0.5). We emphasize that coloration of virgin transparent films can be obtained without injection of any external ion into the layer, and further that around a critical substoichiometry by sputtering, namely, WO/sub 2.5/, one can prepare blue virgin layers without any hydrogen. The effect of substoichiometry on the valence of tungsten atoms has been followed by XPS measurements of sputtered layers

Experimental setup for producing tungsten coated graphite tiles using plasma enhanced chemical vapor deposition technique for fusion plasma applications

International Nuclear Information System (INIS)

Chauhan, Sachin Singh; Sharma, Uttam; Choudhary, K.K.; Sanyasi, A.K.; Ghosh, J.; Sharma, Jayshree

2013-01-01

Plasma wall interaction (PWI) in fusion grade machines puts stringent demands on the choice of materials in terms of high heat load handling capabilities and low sputtering yields. Choice of suitable material still remains a challenge and open topic of research for the PWI community. Carbon fibre composites (CFC), Beryllium (Be), and Tungsten (W) are now being considered as first runners for the first wall components of future fusion machines. Tungsten is considered to be one of the suitable materials for the job because of its superior properties than carbon like low physical sputtering yield and high sputter energy threshold, high melting point, fairly high re-crystallization temperature, low fuel retention capabilities, low chemical sputtering with hydrogen and its isotopes and most importantly the reparability with various plasma techniques both ex-situ and in-situ. Plasma assisted chemical vapour deposition is considered among various techniques as the most preferable technique for fabricating tungsten coated graphite tiles to be used as tokamak first wall and target components. These coated tiles are more favourable compared to pure tungsten due to their light weight and easier machining. A system has been designed, fabricated and installed at SVITS, Indore for producing tungsten coated graphite tiles using Plasma Enhanced Chemical Vapor Deposition (PE-CVD) technique for Fusion plasma applications. The system contains a vacuum chamber, a turbo-molecular pump, two electrodes, vacuum gauges, mass analyzer, mass flow controllers and a RF power supply for producing the plasma using hydrogen gas. The graphite tiles will be put on one of the electrodes and WF6 gas will be inserted in a controlled manner in the hydrogen plasma to achieve the tungsten-coating with WF6 dissociation. The system is integrated at SVITS, Indore and a vacuum of the order of 3*10 -6 is achieved and glow discharge plasma has been created to test all the sub-systems. The system design with

Polyelectrolyte layer-by-layer deposition in cylindrical nanopores.

Science.gov (United States)

Lazzara, Thomas D; Lau, K H Aaron; Abou-Kandil, Ahmed I; Caminade, Anne-Marie; Majoral, Jean-Pierre; Knoll, Wolfgang

2010-07-27

Layer-by-layer (LbL) deposition of polyelectrolytes within nanopores in terms of the pore size and the ionic strength was experimentally studied. Anodic aluminum oxide (AAO) membranes, which have aligned, cylindrical, nonintersecting pores, were used as a model nanoporous system. Furthermore, the AAO membranes were also employed as planar optical waveguides to enable in situ monitoring of the LbL process within the nanopores by optical waveguide spectroscopy (OWS). Structurally well-defined N,N-disubstituted hydrazine phosphorus-containing dendrimers of the fourth generation, with peripherally charged groups and diameters of approximately 7 nm, were used as the model polyelectrolytes. The pore diameter of the AAO was varied between 30-116 nm and the ionic strength was varied over 3 orders of magnitude. The dependence of the deposited layer thickness on ionic strength within the nanopores is found to be significantly stronger than LbL deposition on a planar surface. Furthermore, deposition within the nanopores can become inhibited even if the pore diameter is much larger than the diameter of the G4-polyelectrolyte, or if the screening length is insignificant relative to the dendrimer diameter at high ionic strengths. Our results will aid in the template preparation of polyelectrolyte multilayer nanotubes, and our experimental approach may be useful for investigating theories regarding the partitioning of nano-objects within nanopores where electrostatic interactions are dominant. Furthermore, we show that the enhanced ionic strength dependence of polyelectrolyte transport within the nanopores can be used to selectively deposit a LbL multilayer atop a nanoporous substrate.

Fabrication of tungsten probe for hard tapping operation in atomic force microscopy

Energy Technology Data Exchange (ETDEWEB)

Han, Guebum, E-mail: hanguebum@live.co.kr [Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Avenue, Terre Haute, Indiana 47803 (United States); Department of Mechanical Design and Robot Engineering, Seoul National University of Science and Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of); Ahn, Hyo-Sok, E-mail: hsahn@seoultech.ac.kr [Manufacturing Systems and Design Engineering Programme, Seoul National University of Science & Technology, 232 Gongneung-ro, Nowon-gu, Seoul 139-743 (Korea, Republic of)

2016-02-15

We propose a method of producing a tungsten probe with high stiffness for atomic force microscopy (AFM) in order to acquire enhanced phase contrast images and efficiently perform lithography. A tungsten probe with a tip radius between 20 nm and 50 nm was fabricated using electrochemical etching optimized by applying pulse waves at different voltages. The spring constant of the tungsten probe was determined by finite element analysis (FEA), and its applicability as an AFM probe was evaluated by obtaining topography and phase contrast images of a Si wafer sample partly coated with Au. Enhanced hard tapping performance of the tungsten probe compared with a commercial Si probe was confirmed by conducting hard tapping tests at five different oscillation amplitudes on single layer graphene grown by chemical vapor deposition (CVD). To analyze the damaged graphene sample, the test areas were investigated using tip-enhanced Raman spectroscopy (TERS). The test results demonstrate that the tungsten probe with high stiffness was capable of inducing sufficient elastic and plastic deformation to enable obtaining enhanced phase contrast images and performing lithography, respectively. - Highlights: • We propose a method of producing highly stiff tungsten probes for hard tapping AFM. • Spring constant of tungsten probe is determined by finite element method. • Enhanced hard tapping performance is confirmed. • Tip-enhanced Raman spectroscopy is used to identify damage to graphene.

Fabrication of tungsten probe for hard tapping operation in atomic force microscopy

International Nuclear Information System (INIS)

Han, Guebum; Ahn, Hyo-Sok

2016-01-01

We propose a method of producing a tungsten probe with high stiffness for atomic force microscopy (AFM) in order to acquire enhanced phase contrast images and efficiently perform lithography. A tungsten probe with a tip radius between 20 nm and 50 nm was fabricated using electrochemical etching optimized by applying pulse waves at different voltages. The spring constant of the tungsten probe was determined by finite element analysis (FEA), and its applicability as an AFM probe was evaluated by obtaining topography and phase contrast images of a Si wafer sample partly coated with Au. Enhanced hard tapping performance of the tungsten probe compared with a commercial Si probe was confirmed by conducting hard tapping tests at five different oscillation amplitudes on single layer graphene grown by chemical vapor deposition (CVD). To analyze the damaged graphene sample, the test areas were investigated using tip-enhanced Raman spectroscopy (TERS). The test results demonstrate that the tungsten probe with high stiffness was capable of inducing sufficient elastic and plastic deformation to enable obtaining enhanced phase contrast images and performing lithography, respectively. - Highlights: • We propose a method of producing highly stiff tungsten probes for hard tapping AFM. • Spring constant of tungsten probe is determined by finite element method. • Enhanced hard tapping performance is confirmed. • Tip-enhanced Raman spectroscopy is used to identify damage to graphene.

Electron-stimulated desorption of cesium atoms from cesium layers adsorbed on gold-covered tungsten

Energy Technology Data Exchange (ETDEWEB)

Ageev, V N; Kuznetsov, Yu A; Potekhina, N D, E-mail: kuznets@ms.ioffe.r [A F Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021, St Petersburg (Russian Federation)

2010-03-03

The electron-stimulated desorption (ESD) yields and energy distributions (ED) for neutral cesium atoms have been measured from cesium layers adsorbed on a gold-covered tungsten surface as a function of electron energy, gold film thickness, cesium coverage and substrate temperature. The measurements have been carried out using a time-of-flight method and surface ionization detector in the temperature range 160-300 K. A measurable ESD yield for Cs atoms is observed only after deposition of more than one monolayer of gold and cesium on a tungsten surface at a temperature T = 300 K, which is accompanied by the formation of a CsAu semiconductor film covered with a cesium atom monolayer. The Cs atom ESD yield as a function of incident electron energy has a resonant character and consists of two peaks, the appearance of which depends on both electron energy and substrate temperature. The first peak has an appearance threshold at an electron energy of 57 eV and a substrate temperature of 300 K that is due to Au 5p{sub 3/2} core level excitation in the substrate. The second peak appears at an electron energy of 24 eV and a substrate temperature of 160 K. It is associated with a Cs 5s core level excitation in the Cs adsorbed layer. The Au 5p{sub 3/2} level excitation corresponds to a single broad peak in the ED with a maximum at a kinetic energy of 0.45 eV at a substrate temperature T = 300 K, which is split into two peaks with maxima at kinetic energies of 0.36 and 0.45 eV at a substrate temperature of 160 K, associated with different Cs atom ESD channels. The Cs 5s level excitation leads to an ED for Cs atoms with a maximum at a kinetic energy of approx 0.57 eV which exists only at T < 240 K and low Cs concentrations. The mechanisms for all the Cs atom ESD channels are proposed and compared with the Na atom ESD channels in the Na-Au-W system.

Atomic layer deposition for graphene device integration

NARCIS (Netherlands)

Vervuurt, R.H.J.; Kessels, W.M.M.; Bol, A.A.

2017-01-01

Graphene is a two dimensional material with extraordinary properties, which make it an interesting material for many optical and electronic devices. The integration of graphene in these devices often requires the deposition of thin dielectric layers on top of graphene. Atomic layer deposition (ALD)

Thermal Spray Coating of Tungsten for Tokamak Device

International Nuclear Information System (INIS)

Jiang Xianliang; Gitzhofer, F; Boulos, M I

2006-01-01

Thermal spray, such as direct current (d.c.) plasma spray or radio frequency induced plasma spray, was used to deposit tungsten coatings on the copper electrodes of a tokamak device. The tungsten coating on the outer surface of one copper electrode was formed directly through d.c. plasma spraying of fine tungsten powder. The tungsten coating/lining on the inner surface of another copper electrode could be formed indirectly through induced plasma spraying of coarse tungsten powder. Scanning electron microscopy (SEM) was used to examine the cross section and the interface of the tungsten coating. Energy Dispersive Analysis of X-ray (EDAX) was used to analyze the metallic elements attached to a separated interface. The influence of the particle size of the tungsten powder on the density, cracking behavior and adhesion of the coating is discussed. It is found that the coarse tungsten powder with the particle size of 45 ∼ 75 μm can be melted and the coating can be formed only by using induced plasma. The coating deposited from the coarse powder has much higher cohesive strength, adhesive strength and crack resistance than the coating made from the fine powder with a particle size of 5 μm

Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

International Nuclear Information System (INIS)

Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

2014-01-01

We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection

Atomic and molecular layer deposition for surface modification

Energy Technology Data Exchange (ETDEWEB)

Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, PO Box 1000, FI‐02044 VTT (Finland); Sievänen, Jenni; Salo, Erkki; Heikkilä, Pirjo; Kenttä, Eija [VTT Technical Research Centre of Finland, PO Box 1000, FI‐02044 VTT (Finland); Johansson, Leena-Sisko, E-mail: leena-sisko.johansson@aalto.fi [Aalto University, School of Chemical Technology, Department of Forest Products Technology, PO Box 16100, FI‐00076 AALTO (Finland); Koskinen, Jorma T.; Harlin, Ali [VTT Technical Research Centre of Finland, PO Box 1000, FI‐02044 VTT (Finland)

2014-06-01

Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gas–solid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin – even non-uniform – atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjet printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: • ALD/MLD can be used to adjust surface characteristics of films and fiber materials. • Hydrophobicity after few deposition cycles of Al{sub 2}O{sub 3} due to e.g. complex formation. • Same effect on cellulosic fabrics observed with low temperature deposited TiO{sub 2}. • Different film growth and oxidation potential with different precursors. • Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt.

Development Status of a CVD System to Deposit Tungsten onto UO2 Powder via the WCI6 Process

Science.gov (United States)

Mireles, O. R.; Kimberlin, A.; Broadway, J.; Hickman, R.

2014-01-01

Nuclear Thermal Propulsion (NTP) is under development for deep space exploration. NTP's high specific impulse (> 850 second) enables a large range of destinations, shorter trip durations, and improved reliability. W-60vol%UO2 CERMET fuel development efforts emphasize fabrication, performance testing and process optimization to meet service life requirements. Fuel elements must be able to survive operation in excess of 2850 K, exposure to flowing hydrogen (H2), vibration, acoustic, and radiation conditions. CTE mismatch between W and UO2 result in high thermal stresses and lead to mechanical failure as a result UO2 reduction by hot hydrogen (H2) [1]. Improved powder metallurgy fabrication process control and mitigated fuel loss can be attained by coating UO2 starting powders within a layer of high density tungsten [2]. This paper discusses the advances of a fluidized bed chemical vapor deposition (CVD) system that utilizes the H2-WCl6 reduction process.

Thin film deposition and characterization of pure and iron-doped electron-beam evaporated tungsten oxide for gas sensors

Energy Technology Data Exchange (ETDEWEB)

Tesfamichael, Tuquabo, E-mail: t.tesfamichael@qut.edu.a [Faculty of Built Environment and Engineering, School of Engineering Systems, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Arita, Masashi [Graduate School of Information Science and Technology, Hokkaido University, Kita-14, Nishi-9, Kita-ku, Sapporo, 060-0814 (Japan); Bostrom, Thor [Faculty of Science and Technology, School of Physical and Chemical Sciences, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia); Bell, John [Centre for Built Environment and Engineering Research, Queensland University of Technology, 2 George Street, Brisbane, QLD 4000 (Australia)

2010-06-30

Pure tungsten oxide (WO{sub 3}) and iron-doped (10 at.%) tungsten oxide (WO{sub 3}:Fe) nanostructured thin films were prepared using a dual crucible Electron Beam Evaporation (EBE) technique. The films were deposited at room temperature under high vacuum onto glass as well as alumina substrates and post-heat treated at 300 {sup o}C for 1 h. Using Raman spectroscopy the as-deposited WO{sub 3} and WO{sub 3}:Fe films were found to be amorphous, however their crystallinity increased after annealing. The estimated surface roughness of the films was similar (of the order of 3 nm) to that determined using Atomic Force Microscopy (AFM). As observed by AFM, the WO{sub 3}:Fe film appeared to have a more compact surface as compared to the more porous WO{sub 3} film. X-ray photoelectron spectroscopy analysis showed that the elemental stoichiometry of the tungsten oxide films was consistent with WO{sub 3}. A slight difference in optical band gap energies was found between the as-deposited WO{sub 3} (3.22 eV) and WO{sub 3}:Fe (3.12 eV) films. The differences in the band gap energies of the annealed films were significantly higher, having values of 3.12 eV and 2.61 eV for the WO{sub 3} and WO{sub 3}:Fe films respectively. The heat treated films were investigated for gas sensing applications using noise spectroscopy. It was found that doping of Fe to WO{sub 3} produced gas selectivity but a reduced gas sensitivity as compared to the WO{sub 3} sensor.

Stability of nanocrystalline electrochemically deposited layers

DEFF Research Database (Denmark)

Pantleon, Karen; Somers, Marcel A. J.

2009-01-01

have different microstructure and properties compared to bulk materials and the thermodynamic non-equilibrium state of as-deposited layers frequently results in changes of the microstructure as a function of time and/or temperature. The evolving microstructure affects the functionality and reliability......The technological demand for manufacturing components with complex geometries of micrometer or sub-micrometer dimensions and ambitions for ongoing miniaturization have attracted particular attention to electrochemical deposition methods. Thin layers of electrochemically deposited metals and alloys...... of electrodeposited components, which can be beneficial, as for the electrical conductivity of copper interconnect lines, or detrimental, as for reduced strength of nickel in MEMS applications. The present work reports on in-situ studies of the microstructure stability of as-deposited nanocrystalline Cu-, Ag- and Ni...

Layer-by-layer deposition of nanostructured CsPbBr3 perovskite thin films

Science.gov (United States)

Reshetnikova, A. A.; Matyushkin, L. B.; Andronov, A. A.; Sokolov, V. S.; Aleksandrova, O. A.; Moshnikov, V. A.

2017-11-01

Layer-by-layer deposition of nanostructured perovskites cesium lead halide thin films is described. The method of deposition is based on alternate immersion of the substrate in the precursor solutions or colloidal solution of nanocrystals and methyl acetate/lead nitrate solution using the device for deposition of films by SILAR and dip-coating techniques. An example of obtaining a photosensitive structure based on nanostructures of ZnO nanowires and layers of CsBbBr3 nanocrystals is also shown.

Hydrogen retention and erosion behaviour of tungsten-doped carbon films (a-C:W)

International Nuclear Information System (INIS)

Sauter, Philipp Andre

2012-01-01

In this study tungsten-doped carbon films (a-C:W) were investigated with respect on hydrogen retention and erosion under deuterium (D) impact. a-C:W was used as model system for mixed layers, which will be deposited on the inner wall of the fusion reactor ITER. The erosion is lowered by the successive enrichment of tungsten at the surface and only mildly depends on the dopant concentration and the temperature. The hydrogen retention is determined by the diffusion of D into depth, which increases with temperature. The resulting successive accumulation of D in a-C:W is insensitive on enrichment for high fluences and in line with the accumulation of D in C.

Mechanical characteristics of a tool steel layer deposited by using direct energy deposition

Science.gov (United States)

Baek, Gyeong Yun; Shin, Gwang Yong; Lee, Eun Mi; Shim, Do Sik; Lee, Ki Yong; Yoon, Hi-Seak; Kim, Myoung Ho

2017-07-01

This study focuses on the mechanical characteristics of layered tool steel deposited using direct energy deposition (DED) technology. In the DED technique, a laser beam bonds injected metal powder and a thin layer of substrate via melting. In this study, AISI D2 substrate was hardfaced with AISI H13 and M2 metal powders for mechanical testing. The mechanical and metallurgical characteristics of each specimen were investigated via microstructure observation and hardness, wear, and impact tests. The obtained characteristics were compared with those of heat-treated tool steel. The microstructures of the H13- and M2-deposited specimens show fine cellular-dendrite solidification structures due to melting and subsequent rapid cooling. Moreover, the cellular grains of the deposited M2 layer were smaller than those of the H13 structure. The hardness and wear resistance were most improved in the M2-deposited specimen, yet the H13-deposited specimen had higher fracture toughness than the M2-deposited specimen and heat-treated D2.

Deposition and Characterization of TRISO Coating Layers

International Nuclear Information System (INIS)

Kim, Do Kyung; Kim, Min Woo; Lee, Hyeon Keun; Choi, Doo Jin; Kim, Jun Kyu; Cho, Sung Hyuk

2008-03-01

Both ZrC and SiC layers are crucial layers in TRISO coated fuel particles since they prevent diffusion of fission products and provide mechanical strength for the fuel particle. However, each layer has its own defects, so the purpose of this study is to complement such defects of these layers. In this study, we carried out thermodynamic simulations before actual experiments. With these simulation results, we deposited the ZrC layers on SiC/graphite substrates through CVD process. SiC films on graphite have different microstructures which are a hemispherical angular, domed top and faceted structure at different deposition temperature, respectively. According to the microstructures of SiC, preferred orientation, hardness and elastic modules of deposited ZrC layer were changed. TRISO particles. The fracture the SiC coating layer occurred by the tensile stress due to the traditional pressure vessel failure criteria. It is important to find fracture stress of SiC coating layer by the internal pressurization test method. The finite-element analysis was carried out to obtain the empirical equation of strength evaluation. By using this empirical equation, the mechanical properties of several types of SiC coating film with different microstructure and thicknesses will discussed

Deposition and Characterization of TRISO Coating Layers

Energy Technology Data Exchange (ETDEWEB)

Kim, Do Kyung; Kim, Min Woo; Lee, Hyeon Keun [KAIST, Daejeon (Korea, Republic of); Choi, Doo Jin; Kim, Jun Kyu; Cho, Sung Hyuk [Younsei University, Seoul (Korea, Republic of)

2008-03-15

Both ZrC and SiC layers are crucial layers in TRISO coated fuel particles since they prevent diffusion of fission products and provide mechanical strength for the fuel particle. However, each layer has its own defects, so the purpose of this study is to complement such defects of these layers. In this study, we carried out thermodynamic simulations before actual experiments. With these simulation results, we deposited the ZrC layers on SiC/graphite substrates through CVD process. SiC films on graphite have different microstructures which are a hemispherical angular, domed top and faceted structure at different deposition temperature, respectively. According to the microstructures of SiC, preferred orientation, hardness and elastic modules of deposited ZrC layer were changed. TRISO particles. The fracture the SiC coating layer occurred by the tensile stress due to the traditional pressure vessel failure criteria. It is important to find fracture stress of SiC coating layer by the internal pressurization test method. The finite-element analysis was carried out to obtain the empirical equation of strength evaluation. By using this empirical equation, the mechanical properties of several types of SiC coating film with different microstructure and thicknesses will discussed.

Tungsten as First Wall Material in Fusion Devices

International Nuclear Information System (INIS)

Kaufmann, M.

2006-01-01

In the PLT tokamak with a tungsten limiter strong cooling of the central plasma was observed. Since then mostly graphite has been used as limiter or target plate material. Only a few tokamaks (limiter: FTU, TEXTOR; divertor: Alcator C-Mod, ASDEX Upgrade) gained experience with high-Z-materials. With the observed strong co- deposition of tritium together with carbon in JET and as a result of design studies of fusion reactors, it became clear that in the long run tungsten is the favourite for the first-wall material. Tungsten as a plasma facing material requires intensive research in all areas, i.e. in plasma physics, plasma wall-interaction and material development. Tungsten as an impurity in the confined plasma reveals considerable differences to carbon. Strong radiation at high temperatures, in connection with mostly a pronounced inward drift forms a particular challenge. Turbulent transport plays a beneficial role in this regard. The inward drift is an additional problem in the pedestal region of H-mode plasmas in ITER-like configurations. The erosion by low energy hydrogen atoms is in contrast to carbon small. However, erosion by fast particles from heating measures and impurity ions, accelerated in the sheath potential, play an important role in the case of tungsten. Radiation by carbon in the plasma boundary reduces the load to the target plates. Neon or Argon as substitutes will increase the erosion of tungsten. So far experiments have demonstrated that in most scenarios the tungsten content in the central plasma can be kept sufficiently small. The material development is directed to the specific needs of existing or future devices. In ASDEX Upgrade, which will soon be a divertor experiment with a complete tungsten first-wall, graphite tiles are coated with tungsten layers. In ITER, the solid tungsten armour of the target plates has to be castellated because of its difference in thermal expansion compared to the cooling structure. In a reactor the technical

Vibration atomic layer deposition for conformal nanoparticle coating

Energy Technology Data Exchange (ETDEWEB)

Park, Suk Won; Woo Kim, Jun; Jong Choi, Hyung; Hyung Shim, Joon, E-mail: shimm@korea.ac.kr [School of Mechanical Engineering, Korea University, Seoul 136-701 (Korea, Republic of)

2014-01-15

A vibration atomic layer deposition reactor was developed for fabricating a conformal thin-film coating on nanosize particles. In this study, atomic layer deposition of 10–15-nm-thick Al{sub 2}O{sub 3} films was conducted on a high-surface-area acetylene black powder with particle diameters of 200–250 nm. Intense vibration during the deposition resulted in the effective separation of particles, overcoming the interparticle agglomeration force and enabling effective diffusion of the precursor into the powder chunk; this phenomenon led to the formation of a conformal film coating on the nanopowder particles. It was also confirmed that the atomic layer deposition Al{sub 2}O{sub 3} films initially grew on the high-surface-area acetylene black powder particles as discrete islands, presumably because chemisorption of the precursor and water occurred only on a few sites on the high-surface-area acetylene black powder surface. Relatively sluggish growth of the films during the initial atomic layer deposition cycles was identified from composition analysis.

Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Briggs, B.D.; Bishop, S.M. [SUNY College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY 12203 (United States); Leedy, K.D. [Air Force Research Laboratory, 2241 Avionics Circle, Wright Patterson Air Force Base, Dayton, OH 45433 (United States); Cady, N.C., E-mail: ncady@albany.edu [SUNY College of Nanoscale Science and Engineering, 255 Fuller Road, Albany, NY 12203 (United States)

2014-07-01

Hafnium oxide-based resistive memory devices have been fabricated on copper bottom electrodes. The HfO{sub x} active layers in these devices were deposited by atomic layer deposition (ALD) at 250 °C with tetrakis(dimethylamido)hafnium(IV) as the metal precursor and an O{sub 2} plasma as the reactant. Depth profiles of the HfO{sub x} by X-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a copper concentration on the order of five atomic percent throughout the HfO{sub x} film. In addition to the Cu doped HfO{sub x}, a thin layer (20 nm) of Cu{sub x}O is present at the surface. This surface layer is believed to have formed during the ALD process, and greatly complicates the analysis of the switching mechanism. The resistive memory structures fabricated from the ALD HfO{sub x} exhibited non-polar resistive switching, independent of the top metal electrode (Ni, Pt, Al, Au). Resistive switching current voltage (I–V) curves were analyzed using Schottky emission and ionic hopping models to gain insight into the physical mechanisms underpinning the device behavior. During the forming process it was determined that, at voltages in excess of 2.5 V, an ionic hopping model is in good agreement with the I–V data. The extracted ion hopping distance ∼ 4 Å was within the range of interatomic spacing of HfO{sub 2} during the forming process consistent with ionic motion of Cu{sup 2+} ions. Lastly the on state I–V data was dominated at larger voltages by Schottky emission with an estimated barrier height of ∼ 0.5 eV and a refractive index of 2.59. The consequence of the Schottky emission analysis indicates the on state resistance to be a product of a Pt/Cu{sub 2}O/Cu filament(s)/Cu{sub 2}O/Cu structure. - Highlights: • HfO{sub 2} was grown via atomic layer deposition at 250 and 100 °C on Cu substrates. • A Cu{sub 2}O surface layer and Cu doping were observed in post-deposition of HfO{sub 2}. • Resistive memory devices were fabricated and

Topography and stratigraphy of Martian polar layered deposits

Science.gov (United States)

Blasius, K. R.; Cutts, J. A.; Howard, A. D.

1982-01-01

The first samples of high resolution Viking Orbiter topographic and stratigraphic data for the layered polar deposits of Mars are presented, showing that these deposits are with respect to both slopes and angular relief similar to those in the south. It is also demonstrated that, in conjunction with stereophotogrammetry, photoclinometry holds promise as a tool for detailed layered deposit studies. The spring season photography, which lends itself to photoclinometric analysis, covers the entire area of the north polar deposits. Detailed tests of layered terrain evolution hypotheses will be made, upon refinement of the data by comparison with stereo data. A more promising refining technique will make use of averaging perpendicular to selected sections to enhance SNR. Local reliefs of 200-800 m, and slopes of 1-8 deg, lead to initial calculations of average layer thickness which yields results of 14-46 m, linearly correlated with slope.

Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhang, X.X. [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China); Wu, Y.Z., E-mail: youzhiwu@163.com [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050 (China); Mu, B. [College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou, 730050 (China); Qiao, L. [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China); Li, W.X.; Li, J.J. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, P., E-mail: pengwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China)

2017-03-15

Tungsten sub-nitride thin films deposited on silicon samples by reactive magnetron sputtering were used as a model system to study the phase stability and microstructural evolution during thermal treatments. XRD, SEM&FIB, XPS, RBS and TDS were applied to investigate the stability of tungsten nitride films after heating up to 1473 K in vacuum. At the given experimental parameters a 920 nm thick crystalline film with a tungsten and nitrogen stoichiometry of 2:1 were achieved. The results showed that no phase and microstructure change occurred due to W{sub 2}N film annealing in vacuum up to 973 K. Heating up to 1073 K led to a partial decomposition of the W{sub 2}N phase and the formation of a W enrichment layer at the surface. Increasing the annealing time at the same temperature, the further decomposition of the W{sub 2}N phase was negligible. The complete decomposition of W{sub 2}N film happened as the temperature reached up to 1473 K.

Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

KAUST Repository

Lin, Yu-Chuan

2014-11-10

Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green\\'s function (NEGF).

Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

KAUST Repository

Lin, Yu-Chuan; Chang, Chih-Yuan S.; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; Kim, Moon J.; Robinson, Jeremy T.; Wallace, Robert M; Mayer, Theresa S.; Datta, Suman; Li, Lain-Jong; Robinson, Joshua A.

2014-01-01

Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF).

Patterned deposition by atmospheric pressure plasma-enhanced spatial atomic layer deposition

NARCIS (Netherlands)

Poodt, P.; Kniknie, B.J.; Branca, A.; Winands, G.J.J.; Roozeboom, F.

2011-01-01

An atmospheric pressure plasma enhanced atomic layer deposition reactor has been developed, to deposit Al2O3 films from trimethyl aluminum and an He/O2 plasma. This technique can be used for 2D patterned deposition in a single in-line process by making use of switched localized plasma sources. It

OEDGE modeling for the planned tungsten ring experiment on DIII-D

Directory of Open Access Journals (Sweden)

J.D. Elder

2017-08-01

Full Text Available The OEDGE code is used to model tungsten erosion and transport for experiments with toroidal rings of high-Z metal tiles in the DIII-D tokamak. Such modeling is needed for both experimental and diagnostic design to have estimates of the expected core and edge tungsten density and to understand the various factors contributing to the uncertainties in these calculations. OEDGE simulations are performed using the planned experimental magnetic geometries and plasma conditions typical of both L-mode and inter-ELM H-mode discharges in DIII-D. OEDGE plasma reconstruction based on specific representative discharges for similar geometries is used to determine the plasma conditions applied to tungsten plasma impurity simulations. A new model for tungsten erosion in OEDGE was developed which imports charge-state resolved carbon impurity fluxes and impact energies from a separate OEDGE run which models the carbon production, transport and deposition for the same plasma conditions as the tungsten simulations. These values are then used to calculate the gross tungsten physical sputtering due to carbon plasma impurities which is then added to any sputtering by deuterium ions; tungsten self-sputtering is also included. The code results are found to be dependent on the following factors: divertor geometry and closure, the choice of cross-field anomalous transport coefficients, divertor plasma conditions (affecting both tungsten source strength and transport, the choice of tungsten atomic physics data used in the model (in particular ionization rate for W-atoms, and the model of the carbon flux and energy used for calculating the tungsten source due to sputtering. Core tungsten density is found to be of order 1015m−3 (excluding effects of any core transport barrier and with significant variability depending on the other factors mentioned with density decaying into the scrape off layer. For the typical core density in the plasma conditions examined of 2 to 4�

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

Science.gov (United States)

Cabrero-Vilatela, A.; Alexander-Webber, J. A.; Sagade, A. A.; Aria, A. I.; Braeuninger-Weimer, P.; Martin, M.-B.; Weatherup, R. S.; Hofmann, S.

2017-12-01

The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

Surface composition of carburized tungsten trioxide and its catalytic activity

International Nuclear Information System (INIS)

Nakazawa, M.; Okamoto, H.

1985-01-01

The surface composition and electronic structure of carburized tungsten trioxide are investigated using x-ray photoelectron spectroscopy (XPS). The relationship between the surface composition and the catalytic activity for methanol electro-oxidation is clarified. The tungsten carbide concentration in the surface layer increases with the carburization time. The formation of tungsten carbide enhances the catalytic activity. On the other hand, the presence of free carbon or tungsten trioxide in the surface layer reduces the activity remarkably. It is also shown that, the higher the electronic density of states near the Fermi level, the higher the catalytic activity

Electrospark doping of steel with tungsten

International Nuclear Information System (INIS)

Denisova, Yulia; Shugurov, Vladimir; Petrikova, Elizaveta; Seksenalina, Malika; Ivanova, Olga; Ikonnikova, Irina; Kunitsyna, Tatyana; Vlasov, Victor; Klopotov, Anatoliy; Ivanov, Yuriy

2016-01-01

The paper is devoted to the numerical modeling of thermal processes and the analysis of the structure and properties of the surface layer of carbon steel subjected to electrospark doping with tungsten. The problem of finding the temperature field in the system film (tungsten) / substrate (iron) is reduced to the solution of the heat conductivity equation. A one-dimensional case of heating and cooling of a plate with the thickness d has been considered. Calculations of temperature fields formed in the system film / substrate synthesized using methods of electrospark doping have been carried out as a part of one-dimensional approximation. Calculations have been performed to select the mode of the subsequent treatment of the system film / substrate with a high-intensity pulsed electron beam. Authors revealed the conditions of irradiation allowing implementing processes of steel doping with tungsten. A thermodynamic analysis of phase transformations taking place during doping of iron with tungsten in equilibrium conditions has been performed. The studies have been carried out on the surface layer of the substrate modified using the method of electrospark doping. The results showed the formation in the surface layer of a structure with a highly developed relief and increased strength properties

Electrospark doping of steel with tungsten

Energy Technology Data Exchange (ETDEWEB)

Denisova, Yulia, E-mail: yukolubaeva@mail.ru; Shugurov, Vladimir, E-mail: shugurov@opee.hcei.tsc.ru [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 634055, Russia, Tomsk, 2/3 Akademicheskiy Ave (Russian Federation); Petrikova, Elizaveta, E-mail: elizmarkova@yahoo.com [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 634055, Russia, Tomsk, 2/3 Akademicheskiy Ave (Russian Federation); National Research Tomsk State University, 36 Lenin Str. Tomsk, 634050 (Russian Federation); Seksenalina, Malika, E-mail: sportmiss@bk.ru [National Research Tomsk Polytechnic University, 30 Lenin Str. Tomsk, 634050 (Russian Federation); Ivanova, Olga, E-mail: ivaov@mail.ru; Ikonnikova, Irina, E-mail: irinaikonnikova@yandex.ru [Tomsk State University of Architecture and Building, 2 Solyanaya Sq. Tomsk, 634003 (Russian Federation); Kunitsyna, Tatyana, E-mail: kma11061990@mail.ru; Vlasov, Victor, E-mail: rector@tsuab.ru [National Research Tomsk Polytechnic University, 30 Lenin Str. Tomsk, 634050 (Russian Federation); Tomsk State University of Architecture and Building, 2 Solyanaya Sq. Tomsk, 634003 (Russian Federation); Klopotov, Anatoliy, E-mail: klopotovaa@tsuab.ru [National Research Tomsk State University, 36 Lenin Str. Tomsk, 634050 (Russian Federation); Tomsk State University of Architecture and Building, 2 Solyanaya Sq. Tomsk, 634003 (Russian Federation); Ivanov, Yuriy, E-mail: yufi55@mail.ru [Institute of High-Current Electronics of the Siberian Branch of the Russian Academy of Sciences, 634055, Russia, Tomsk, 2/3 Akademicheskiy Ave (Russian Federation); National Research Tomsk State University, 36 Lenin Str. Tomsk, 634050 (Russian Federation); National Research Tomsk Polytechnic University, 30 Lenin Str. Tomsk, 634050 (Russian Federation)

2016-01-15

The paper is devoted to the numerical modeling of thermal processes and the analysis of the structure and properties of the surface layer of carbon steel subjected to electrospark doping with tungsten. The problem of finding the temperature field in the system film (tungsten) / substrate (iron) is reduced to the solution of the heat conductivity equation. A one-dimensional case of heating and cooling of a plate with the thickness d has been considered. Calculations of temperature fields formed in the system film / substrate synthesized using methods of electrospark doping have been carried out as a part of one-dimensional approximation. Calculations have been performed to select the mode of the subsequent treatment of the system film / substrate with a high-intensity pulsed electron beam. Authors revealed the conditions of irradiation allowing implementing processes of steel doping with tungsten. A thermodynamic analysis of phase transformations taking place during doping of iron with tungsten in equilibrium conditions has been performed. The studies have been carried out on the surface layer of the substrate modified using the method of electrospark doping. The results showed the formation in the surface layer of a structure with a highly developed relief and increased strength properties.

Test and characterization of a prototype silicon–tungsten electromagnetic calorimeter

Energy Technology Data Exchange (ETDEWEB)

Muhuri, Sanjib, E-mail: sanjibmuhuri@vecc.gov.in [Variable Energy Cyclotron Centre, Kolkata 700064 (India); Mukhopadhyay, Sourav; Chandratre, Vinay B.; Sukhwani, Menka [Bhabha Atomic Research Centre, Electronics Division, Trombay, Mumbai 400085 (India); Jena, Satyajit [Indian Institute of Technology, Bombay, Mumbai 400076 (India); Khan, Shuaib Ahmad; Nayak, Tapan K.; Saini, Jogender; Singaraju, Rama Narayana [Variable Energy Cyclotron Centre, Kolkata 700064 (India)

2014-11-11

New generation high-energy physics experiments demand high precision tracking and accurate measurements of a large number of particles produced in the collisions of elementary particles and heavy-ions. Silicon–tungsten (Si–W) calorimeters provide the most viable technological option to meet the requirements of particle detection in high multiplicity environments. We report a novel Si–W calorimeter design, which is optimized for γ/π{sup 0} discrimination up to high momenta. In order to test the feasibility of the calorimeter, a prototype mini-tower was constructed using silicon pad detector arrays and tungsten layers. The performance of the mini-tower was tested using pion and electron beams at the CERN Proton Synchrotron (PS). The experimental results are compared with the results from a detailed GEANT-4 simulation. A linear relationship between the observed energy deposition and simulated response of the mini-tower has been obtained, in line with our expectations.

The origin of stress in sputter-deposited tungsten films for x-ray masks

International Nuclear Information System (INIS)

Itoh, M.; Hori, M.; Nadahara, S.

1991-01-01

The mechanism for the cause of stress in a sputter-deposited tungsten (W) film has been clarified. The tensile stress of the film was calculated using the interatomic forces acting on the grain boundary. The average distance of the grain boundary gaps was determined from the measured film density assuming the film had homogeneous size rectangular grains. The calculated and measured stress values were in good agreement in the high working gas pressure region. The difference between these values in the low working gas pressure region has been able to be explained by the compressive stress due to the peening effect of Ar. The low stress in the high pressure region was obtained by large opened grain boundaries which produced low film density. A low film density causes a low x-ray stopping power. The film deposited in the low pressure region is suitable as an x-ray absorber because of its high film density

Depressurization and boiling of a single magmatic fluid as a mechanism for tin-tungsten deposit formation

OpenAIRE

Maximilian Korges; Philipp Weis; Volker Lüders; Oscar Laurent

2018-01-01

Tin (Sn) and tungsten (W) mineralization are commonly associated with each other in relation to highly evolved granites, but economical ore grades are restricted to rare global occurrences and mineralization styles are highly variable, indicating different mechanisms for ore formation. The Sn-W Zinnwald deposit in the Erzgebirge (Germany and the Czech Republic) in the roof zone of a Variscan Li-F granite hosts two contrasting styles of mineralization: (1) cassiterite (Sn) in greisen bodies, a...

Tungsten recrystallization and cracking under ITER-relevant heat loads

Energy Technology Data Exchange (ETDEWEB)

Budaev, V.P., E-mail: Budaev@mail.ru [NRC «Kurchatov Institute», Akademika Kurchatova pl., Moscow (Russian Federation); Martynenko, Yu.V. [NRC «Kurchatov Institute», Akademika Kurchatova pl., Moscow (Russian Federation); National Research Nuclear University MEPhI, Kashirskoe sh. 31, Moscow (Russian Federation); Karpov, A.V.; Belova, N.E. [NRC «Kurchatov Institute», Akademika Kurchatova pl., Moscow (Russian Federation); Zhitlukhin, A.M. [SRC RF TRINITI, Moscow Region (Russian Federation); Klimov, N.S., E-mail: klimov@triniti.ru [SRC RF TRINITI, Moscow Region (Russian Federation); National Research Nuclear University MEPhI, Kashirskoe sh. 31, Moscow (Russian Federation); Podkovyrov, V.L.; Barsuk, V.A.; Putrik, A.B.; Yaroshevskaya, A.D. [SRC RF TRINITI, Moscow Region (Russian Federation); Giniyatulin, R.N. [Efremov Institute, St. Petersburg (Russian Federation); Safronov, V.M. [Institution «Project Center ITER», Moscow (Russian Federation); SRC RF TRINITI, Moscow Region (Russian Federation); Khimchenko, L.N. [Institution «Project Center ITER», Moscow (Russian Federation)

2015-08-15

The tungsten surface structure was analyzed after the test in the QSPA-T under heat loads relevant to those expected in the ITER during disruptions. Repeated pulses lead to the melting and the resolidification of the tungsten surface layer of ∼50 μm thickness. There is ∼50 μm thickness intermediate layer between the original structure and the resolidified layer. The intermediate layer is recrystallized and has a random grains’ orientation whereas the resolidified layer and basic structure have texture with preferable orientation 〈1 0 0〉 normal to the surface. The cracks which were normal to the surface were observed in the resolidified layer as well as the cracks which were parallel to the surface at the depth up to 300 μm. Such cracks can result in the brittle destruction which is a hazard for the full tungsten divertor of the ITER. The theoretical analysis of the crack formation reasons and a possible consequence for the ITER are given.

Perovskite Thin Films via Atomic Layer Deposition

KAUST Repository

Sutherland, Brandon R.; Hoogland, Sjoerd; Adachi, Michael M.; Kanjanaboos, Pongsakorn; Wong, Chris T. O.; McDowell, Jeffrey J.; Xu, Jixian; Voznyy, Oleksandr; Ning, Zhijun; Houtepen, Arjan J.; Sargent, Edward H.

2014-01-01

© 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

Perovskite Thin Films via Atomic Layer Deposition

KAUST Repository

Sutherland, Brandon R.

2014-10-30

© 2014 Wiley-VCH Verlag GmbH & Co. KGaA. (Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI2 and subsequently CH3NH3PbI3 perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm-1.

Hydrogen permeation properties of plasma-sprayed tungsten

International Nuclear Information System (INIS)

Anderl, R.A.; Pawelko, R.J.; Hankins, M.R.; Longhurst, G.R.; Neiser, R.A.

1994-01-01

Tungsten has been proposed as a plasma-facing component material for advanced fusion facilities. This paper reports on laboratory-scale studies that were done to assess the hydrogen permeation properties of plasma-sprayed tungsten for such applications. The work entailed deuterium permeation measurements for plasma-sprayed (PS) tungsten coatings, sputter-deposited (SP) tungsten coatings, and steel substrate material using a mass-analyzed, 3 keV D + 3 ion beam with fluxes of similar 6.5x10 19 D/m 2 s. Extensive characterization analyses for the plasma-sprayed tungsten coatings were made using Auger spectrometry and scanning electron microscopy (SEM). Observed permeation rates through composite PS-tungsten/steel specimens were several orders of magnitude below the permeation levels observed for SP-tungsten/steel composite specimens and pure steel specimens. Characterization analyses indicated that the plasma-sprayed tungsten coating had a nonhomogeneous microstructure that consisted of splats with columnar solidification, partially-melted particles with grain boundaries, and void regions. Reduced permeation levels can be attributed to the complex microstructure and a substantial surface-connected porosity. ((orig.))

Hydrogen permeation properties of plasma-sprayed tungsten

Energy Technology Data Exchange (ETDEWEB)

Anderl, R.A. (Idaho National Engineering Lab., EG and G Idaho Inc., Idaho Falls, ID (United States)); Pawelko, R.J. (Idaho National Engineering Lab., EG and G Idaho Inc., Idaho Falls, ID (United States)); Hankins, M.R. (Idaho National Engineering Lab., EG and G Idaho Inc., Idaho Falls, ID (United States)); Longhurst, G.R. (Idaho National Engineering Lab., EG and G Idaho Inc., Idaho Falls, ID (United States)); Neiser, R.A. (Sandia National Laboratories, Albuquerque, NM 87185 (United States))

1994-09-01

Tungsten has been proposed as a plasma-facing component material for advanced fusion facilities. This paper reports on laboratory-scale studies that were done to assess the hydrogen permeation properties of plasma-sprayed tungsten for such applications. The work entailed deuterium permeation measurements for plasma-sprayed (PS) tungsten coatings, sputter-deposited (SP) tungsten coatings, and steel substrate material using a mass-analyzed, 3 keV D[sup +][sub 3] ion beam with fluxes of similar 6.5x10[sup 19] D/m[sup 2] s. Extensive characterization analyses for the plasma-sprayed tungsten coatings were made using Auger spectrometry and scanning electron microscopy (SEM). Observed permeation rates through composite PS-tungsten/steel specimens were several orders of magnitude below the permeation levels observed for SP-tungsten/steel composite specimens and pure steel specimens. Characterization analyses indicated that the plasma-sprayed tungsten coating had a nonhomogeneous microstructure that consisted of splats with columnar solidification, partially-melted particles with grain boundaries, and void regions. Reduced permeation levels can be attributed to the complex microstructure and a substantial surface-connected porosity. ((orig.))

A Review of Atomic Layer Deposition for Nanoscale Devices

Directory of Open Access Journals (Sweden)

Edy Riyanto

2012-12-01

Full Text Available Atomic layer deposition (ALD is a thin film growth technique that utilizes alternating, self-saturation chemical reactions between gaseous precursors to achieve a deposited nanoscale layers. It has recently become a subject of great interest for ultrathin film deposition in many various applications such as microelectronics, photovoltaic, dynamic random access memory (DRAM, and microelectromechanic system (MEMS. By using ALD, the conformability and extreme uniformity of layers can be achieved in low temperature process. It facilitates to be deposited onto the surface in many variety substrates that have low melting temperature. Eventually it has advantages on the contribution to the wider nanodevices.

Laser irradiation of carbon–tungsten materials

International Nuclear Information System (INIS)

Marcu, A; Lungu, C P; Ursescu, D; Porosnicu, C; Grigoriu, C; Avotina, L; Kizane, G; Marin, A; Osiceanu, P; Grigorescu, C E A; Demitri, N

2014-01-01

Carbon–tungsten layers deposited on graphite by thermionic vacuum arc (TVA) were directly irradiated with a femtosecond terawatt laser. The morphological and structural changes produced in the irradiated area by different numbers of pulses were systematically explored, both along the spots and in their depths. Although micro-Raman and Synchrotron-x-ray diffraction investigations have shown no carbide formation, they have shown the unexpected presence of embedded nano-diamonds in the areas irradiated with high fluencies. Scanning electron microscopy images show a cumulative effect of the laser pulses on the morphology through the ablation process. The micro-Raman spatial mapping signalled an increased percentage of sp 3 carbon bonding in the areas irradiated with laser fluencies around the ablation threshold. In-depth x-ray photoelectron spectroscopy investigations suggested a weak cumulative effect on the percentage increase of the sp 2 -sp 3 transitions with the number of laser pulses just for nanometric layer thicknesses. (paper)

Helium-induced hardening effect in polycrystalline tungsten

Science.gov (United States)

Kong, Fanhang; Qu, Miao; Yan, Sha; Zhang, Ailin; Peng, Shixiang; Xue, Jianming; Wang, Yugang

2017-09-01

In this paper, helium induced hardening effect of tungsten was investigated. 50 keV He2+ ions at fluences vary from 5 × 1015 cm-2 to 5 × 1017 cm-2 were implanted into polycrystalline tungsten at RT to create helium bubble-rich layers near the surface. The microstructure and mechanical properties of the irradiated specimens were studied by TEM and nano-indentor. Helium bubble rich layers are formed in near surface region, and the layers become thicker with the rise of fluences. Helium bubbles in the area of helium concentration peak are found to grow up, while the bubble density is almost unchanged. Obvious hardening effect is induced by helium implantation in tungsten. Micro hardness increases rapidly with the fluence firstly, and more slowly when the fluence is above 5 × 1016 cm-2. The hardening effect of tungsten can be attributed to helium bubbles, which is found to be in agreement with the Bacon-Orowan stress formula. The growing diameter is the major factor rather than helium bubbles density (voids distance) in the process of helium implantation at fluences below 5 × 1017 cm-2.

Physical mechanisms related to the degradation of LPCVD tungsten contacts at elevated temperatures

International Nuclear Information System (INIS)

Shenai, K.; Lewis, N.; Smith, G.A.; McConnell, M.D.; Burrell, M.

1990-01-01

The thermal stability of LPCVD (low pressure chemical vapor deposition) tungsten contacts to n-type silicon is studied at elevated temperatures in excess of 650 degrees C. The process variants studied include silicon doping, tungsten thickness, and post tungsten deposition dielectric stress temperatures. Detailed measurements of Kelvin contact resistance were made at room temperature as well as at elevated temperatures up to 165 degrees C. The tungsten contact resistance degradation at elevated stress temperatures is correlated with worm hole formation in silicon and the formation and diffusion of tungsten silicide. Extensive analytical measurements were used to characterize the material transformation at elevated stress temperatures to understand the physical mechanisms causing contact degradation

Tritium retention properties of tungsten, graphite and co-deposited carbon film

International Nuclear Information System (INIS)

Nobuta, Y.; Hatano, Y.; Matsuyama, M.; Abe, S.; Akamaru, S.; Yamauchi, Y.; Hino, T.; Suzuki, S.; Akiba, M.

2014-01-01

DT + ion irradiation was performed on polycrystalline tungsten, graphite and carbon film and both the amount of retained tritium and the reduction of retained tritium after preservation in vacuum were investigated using an IP technique and BIXS. In addition, the relationship between the retention properties of tritium and the microstructure of graphite and carbon film were studied with Raman spectroscopy. The amount of retained tritium in tungsten was smaller than in both graphite and carbon film. After 1 keV of DT + irradiation, graphite showed no reduction of the amount of retained tritium after six months preservation while that of carbon film decreased by approximately 20% after 40 days preservation. It was suggested that this difference might be associated with differences in the microstructure between graphite and carbon film. In tungsten, the amount of retained tritium decreased to approximately half after 18 days preservation. As the incident energy of implanted tritium to tungsten increased, the decrease in tritium retention during preservation became slower. Tungsten's properties of releasing tritium while preserved in vacuum would be a useful tool for the reduction/removal of retained tritium

Atomic layer deposition for semiconductors

CERN Document Server

Hwang, Cheol Seong

2014-01-01

This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

Mineralogy and Trace Element Chemistry of Ferberite/Reinite from Tungsten Deposits in Central Rwanda

Directory of Open Access Journals (Sweden)

Philippe Muchez

2013-04-01

Full Text Available Tungsten mineralization in hydrothermal quartz veins from the Nyakabingo,Gifurwe and Bugarama deposits in central Rwanda occurs as the iron-rich endmember ofthe wolframite solid solution series (ferberite and in the particular form of reinite, whichrepresents a pseudomorph of ferberite after scheelite. Primary ferberite, reinite and latesecondary ferberite are characterized by their trace element chemistry and rare earthelement patterns. The replacement of scheelite by ferberite is also documented in the traceelement composition. Primary ferberite shows high Mg, Zn, Sc, V, Nb, In and Snconcentrations, but very low Ca, Pb, Sr and Ba contents. Reinite and late secondaryferberite display an uncommon trace element composition containing high concentrationsof Ca, Pb, Sr, Ba, As and Ga, but very low levels in Sn, Zr, Hf, In, Ti, Sc, Nb, Ta, Mg andZn. Late secondary ferberite replacing primary ferberite is characterized by additionalenrichments in Bi, Pb, As and Sb. The rare earth element patterns of reinite and secondaryferberite are also similar to hydrothermal scheelite. The formation of the tungsten depositsin central Rwanda is interpreted to be epigenetic in origin, and the hydrothermalmineralizing fluids are related to the intrusion of the G4-granites.

Comparison of stress in single and multiple layer depositions of plasma-deposited amorphous silicon dioxide

International Nuclear Information System (INIS)

Au, V; Charles, C; Boswell, R W

2006-01-01

The stress in a single-layer continuous deposition of amorphous silicon dioxide (SiO 2 ) film is compared with the stress within multiple-layer intermittent or 'stop-start' depositions. The films were deposited by helicon activated reactive evaporation (plasma assisted deposition with electron beam evaporation source) to a 1 μm total film thickness. The relationships for stress as a function of film thickness for single, two, four and eight layer depositions have been obtained by employing the substrate curvature technique on a post-deposition etch-back of the SiO 2 film. At film thicknesses of less than 300 nm, the stress-thickness relationships clearly show an increase in stress in the multiple-layer samples compared with the relationship for the single-layer film. By comparison, there is little variation in the film stress between the samples when it is measured at 1 μm film thickness. Localized variations in stress were not observed in the regions where the 'stop-start' depositions occurred. The experimental results are interpreted as a possible indication of the presence of unstable, strained Si-O-Si bonds in the amorphous SiO 2 film. It is proposed that the subsequent introduction of a 'stop-start' deposition process places additional strain on these bonds to affect the film structure. The experimental stress-thickness relationships were reproduced independently by assuming a linear relationship between the measured bow and film thickness. The constants of the linear model are interpreted as an indication of the density of the amorphous film structure

Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

NARCIS (Netherlands)

Mackus, A.J.M.; Mulders, J.J.L.; Sanden, van de M.C.M.; Kessels, W.M.M.

2010-01-01

An approach for direct-write fabrication of high-purity platinum nanostructures has been developed by combining nanoscale lateral patterning by electron beam induced deposition (EBID) with area-selective deposition of high quality material by atomic layer deposition (ALD). Because virtually pure,

Deposits of the Peruvian Pisco Formation compared to layered deposits on Mars

Science.gov (United States)

Sowe, M.; Bishop, J. L.; Gross, C.; Walter, S.

2013-09-01

Deposits of the Peruvian Pisco Formation are morphologically similar to the mounds of Juventae Chasma at the equatorial region on Mars (Fig. 1). By analyzing these deposits, we hope to gain information about the environmental conditions that prevailed during sediment deposition and erosion, hence conditions that might be applicable to the Martian layered and hydrated deposits. Mariner 9 data of the Martian mid-latitudes have already shown evidence of the wind-sculptured landforms that display the powerful prevailing eolian regime [1]. In addition, [2] reported on similarities between Martian erosional landforms and those of the rainless coastal desert of central Peru from the Paracas peninsula to the Rio Ica. As indicated by similar erosional patterns, hyper-arid conditions and unidirectional winds must have dominated at least after deposition of the sediments, which are intermixed volcaniclastic materials and evaporate minerals at both locations. Likewise, variations in composition are displayed by alternating layers of different competence. The Pisco formation bears yardangs on siltstones, sandstones and clays with volcaniclastic admixtures [3] whereas the presence of sulphate minerals and the omnipresent mafic mineralogy has been reported for the layered mounds of Juventae Chasma equally [4]. Likewise, a volcanic airfall deposition and lacustrine formation have been proposed for the sulphate-rich deposits of Juventae Chasma [5,6]. In order to find out about potential spectral similarities, we performed a detailed spectral analysis of the surface by using LANDSAT and Advanced Spaceborne Thermal Emission and Reflection Radiometer (ASTER) VNIR/ SWIR data (visible to near-infrared and shortwave infrared region).

Synthesis and electrical characterization of tungsten oxide nanowires

Institute of Scientific and Technical Information of China (English)

Huang Rui; Zhu Jing; Yu Rong

2009-01-01

Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. Ⅰ-Ⅴ curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the Ⅰ-Ⅴ curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I V curves by using a metal-semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.

Reducing interface recombination for Cu(In,Ga)Se{sub 2} by atomic layer deposited buffer layers

Energy Technology Data Exchange (ETDEWEB)

Hultqvist, Adam; Bent, Stacey F. [Department of Chemical Engineering, Stanford University, Stanford, California 94305 (United States); Li, Jian V.; Kuciauskas, Darius; Dippo, Patricia; Contreras, Miguel A.; Levi, Dean H. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

2015-07-20

Partial CuInGaSe{sub 2} (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO{sub x} buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VI systems. Both the PL spectra and its lifetime depend on the buffer layer; thus, these measurements are not only sensitive to the absorber but also to the absorber/buffer layer system. Pretreatment of the CIGS prior to the buffer layer deposition plays a significant role on the electrical properties for the same buffer layer/CIGS stack, further illuminating the importance of good interface formation. Finally, ZnS is found to be the best performing buffer layer in this study, especially if the CIGS surface is pretreated with potassium cyanide.

Incorporation of tungsten metal fibers in a metal and ceramic matrix

Directory of Open Access Journals (Sweden)

V. Brozek

2017-01-01

Full Text Available Tungsten fibers have high tensile strength but a poor oxidation resistance at elevated temperatures. Using this first characteristic and to prevent oxidation of tungsten coated composite materials in which the primary requirement: reinforcement against destruction or deformation, was studied on tungsten fibers and tungsten wires which were coated by applying the metal and ceramic powders via plasma spraying device in plasma generator WSP®. Deposition took place in an atmosphere of Ar + 7 % H2, sufficient to reduce the oxidized trace amounts of tungsten.

Stress in tungsten carbide-diamond like carbon multilayer coatings

NARCIS (Netherlands)

Pujada, B.R.; Tichelaar, F.D.; Janssen, G.C.A.M.

2007-01-01

Tungsten carbide-diamond like carbon (WC-DLC) multilayer coatings have been prepared by sputter deposition from a tungsten-carbide target and periodic switching on and off of the reactive acetylene gas flow. The stress in the resulting WC-DLC multilayers has been studied by substrate curvature.

Deuterium trapping in tungsten

Science.gov (United States)

Poon, Michael

irradiation. Deuterium trapping could be characterized by three regimes: (i) enhanced D retention in a graphitic film formed by the C+ irradiation; (ii) decreased D retention in a modified tungsten-carbon layer; and (iii) D retention in pure tungsten.

Deuterium trapping in tungsten

International Nuclear Information System (INIS)

Poon, M.

2004-01-01

irradiation Deuterium trapping could be characterized by three regimes: (i) enhanced D retention in a graphitic film formed by the C + irradiation ; (ii) decreased D retention in a modified tungsten-carbon layer; and (iii) D retention in pure tungsten. (author)

Deuterium trapping in tungsten

Energy Technology Data Exchange (ETDEWEB)

Poon, M

2004-07-01

irradiation Deuterium trapping could be characterized by three regimes: (i) enhanced D retention in a graphitic film formed by the C{sup +} irradiation ; (ii) decreased D retention in a modified tungsten-carbon layer; and (iii) D retention in pure tungsten. (author)

Characterization of redeposited carbon layers on TEXTOR limiter by Laser Raman spectroscopy

International Nuclear Information System (INIS)

Egashira, K.; Tanabe, T.; Yoshida, M.; Nakazato, H.; Philipps, V.; Brezinsek, S.; Kreter, A.

2011-01-01

Highlights: ► Laser Raman technique has applied to analyze the deposited carbon layers on TEXTOR test limiters of C and W. ► The carbon deposited layers showed the Raman spectra composed of G-peak and D-peak. ► For W limiter, hydrogen concentrations in the deposited carbon layers and their thicknesses correlated to the two peaks. ► The Laser Raman spectroscopy is a promising tool for in situ analysis of carbon redeposit layers on plasma facing W materials. - Abstract: Laser Raman spectroscopy is quite sensitive to detect the changes of graphite structure. In this study, the Laser Raman technique was applied to analyze the deposited carbon layers on TEXTOR test limiters of carbon (C) and tungsten (W) produced by intentional carbon deposition experiments by methane gas puffing. The carbon deposited layers showed the Raman spectra composed of two broad peaks, G-peak and D-peak, centered at around 1580 and 1355 cm −1 respectively. For W limiter, the G-peak position and the integrated intensity of the two peaks well correlate to hydrogen concentrations in the deposited carbon layers and their thicknesses, respectively. Hence Laser Raman spectroscopy is a promising tool for the in situ analysis of carbon redeposit layers on plasma facing W materials and probably on Be materials.

Atomic layer deposition of alternative glass microchannel plates

Energy Technology Data Exchange (ETDEWEB)

O' Mahony, Aileen, E-mail: aom@incomusa.com; Craven, Christopher A.; Minot, Michael J.; Popecki, Mark A.; Renaud, Joseph M.; Bennis, Daniel C.; Bond, Justin L.; Stochaj, Michael E.; Foley, Michael R.; Adams, Bernhard W. [Incom, Inc., 294 Southbridge Road, Charlton, Massachusetts 01507 (United States); Mane, Anil U.; Elam, Jeffrey W. [Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439 (United States); Ertley, Camden; Siegmund, Oswald H. W. [Space Sciences Laboratory, University of California, 7 Gauss Way, Berkeley, California 94720 (United States)

2016-01-15

The technique of atomic layer deposition (ALD) has enabled the development of alternative glass microchannel plates (MCPs) with independently tunable resistive and emissive layers, resulting in excellent thickness uniformity across the large area (20 × 20 cm), high aspect ratio (60:1 L/d) glass substrates. Furthermore, the use of ALD to deposit functional layers allows the optimal substrate material to be selected, such as borosilicate glass, which has many benefits compared to the lead-oxide glass used in conventional MCPs, including increased stability and lifetime, low background noise, mechanical robustness, and larger area (at present up to 400 cm{sup 2}). Resistively stable, high gain MCPs are demonstrated due to the deposition of uniform ALD resistive and emissive layers on alternative glass microcapillary substrates. The MCP performance characteristics reported include increased stability and lifetime, low background noise (0.04 events cm{sup −2} s{sup −1}), and low gain variation (±5%)

Stratigraphy and erosional landforms of layered deposits in Valles Marineris, Mars

Science.gov (United States)

Komatsu, G.; Geissler, P. E.; Strom, R. G.; Singer, R. B.

1993-01-01

Satellite imagery is used to identify stratigraphy and erosional landforms of 13 layered deposits in the Valles Marineris region of Mars (occurring, specifically, in Gangis, Juventae, Hebes, Ophir-Candor, Melas, and Capri-Eos Chasmata), based on albedo and erosional styles. Results of stratigraphic correlations show that the stratigraphy of layered deposits in the Hebes, Juventae, and Gangis Chasmata are not well correlated, indicating that at least these chasmata had isolated depositional environments resulting in different stratigraphic sequences. On the other hand, the layered deposits in Ophir-Candor and Melas Chasmata appear to have been connected in each chasma. Some of the layered deposits display complexities which indicate changes in space and time in the dominant source materials.

Hydrogen permeation properties of plasma-sprayed tungsten*1

Science.gov (United States)

Anderl, R. A.; Pawelko, R. J.; Hankins, M. R.; Longhurst, G. R.; Neiser, R. A.

1994-09-01

Tungsten has been proposed as a plasma-facing component material for advanced fusion facilities. This paper reports on laboratory-scale studies that were done to assess the hydrogen permeation properties of plasma-sprayed tungsten for such applications. The work entailed deuterium permeation measurements for plasma-sprayed (PS) tungsten coatings, sputter-deposited (SP) tungsten coatings, and steel substrate material using a mass-analyzed, 3 keV D 3+ ion beam with fluxes of ˜6.5 × 10 19 D/m 2 s. Extensive characterization analyses for the plasma-sprayed tungsten coatings were made using Auger spectrometry and scanning electron microscopy (SEM). Observed permeation rates through composite PS-tungsten/steel specimens were several orders of magnitude below the permeation levels observed for SP-tungsten/steel composite specimens and pure steel specimens. Characterization analyses indicated that the plasma-sprayed tungsten coating had a nonhomogeneous microstructure that consisted of splats with columnar solidification, partially-melted particles with grain boundaries, and void regions. Reduced permeation levels can be attributed to the complex microstructure and a substantial surface-connected porosity.

Hetero- and homogeneous three-dimensional hierarchical tungsten oxide nanostructures by hot-wire chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Houweling, Z.S., E-mail: Silvester.Houweling@asml.com [Utrecht University, Debye Institute for Nanomaterials Science, Nanophotonics—Physics of Devices, Princetonlaan 4, 3584 CB Utrecht (Netherlands); Harks, P.-P.R.M.L.; Kuang, Y.; Werf, C.H.M. van der [Utrecht University, Debye Institute for Nanomaterials Science, Nanophotonics—Physics of Devices, Princetonlaan 4, 3584 CB Utrecht (Netherlands); Geus, J.W. [Utrecht University, Inorganic Chemistry and Catalysis, Padualaan 8, 3584 CH Utrecht (Netherlands); Schropp, R.E.I. [Utrecht University, Debye Institute for Nanomaterials Science, Nanophotonics—Physics of Devices, Princetonlaan 4, 3584 CB Utrecht (Netherlands)

2015-01-30

We present the synthesis of three-dimensional tungsten oxide (WO{sub 3−x}) nanostructures, called nanocacti, using hot-wire chemical vapor deposition. The growth of the nanocacti is controlled through a succession of oxidation, reduction and re-oxidation processes. By using only a resistively heated W filament, a flow of ambient air and hydrogen at subatmospheric pressure, and a substrate heated to about 700 °C, branched nanostructures are deposited. We report three varieties of simple synthesis approaches to obtain hierarchical homo- and heterogeneous nanocacti. Furthermore, by using catalyst nanoparticles site-selection for the growth is demonstrated. The atomic, morphological and crystallographic compositions of the nanocacti are determined using a combination of electron microscopy techniques, energy-dispersive X-ray spectroscopy and electron diffraction. - Highlights: • Continuous upscalable hot-wire CVD of 3D hierarchical nanocacti • Controllable deposition of homo- and heterogeneous WO{sub 3−x}/WO{sub 3−y} nanocacti • Introduction of three synthesis routes comprising oxidation, reduction and re-oxidation processes • Growth of periodic arrays of hetero- and homogeneous hierarchical 3D nanocacti.

On the tungsten single crystal coatings achieved by chemical vapor transportation deposition

Energy Technology Data Exchange (ETDEWEB)

Shi, J.Q.; Shen, Y.B.; Yao, S.Y.; Zhang, P.J.; Zhou, Q.; Guo, Y.Z. [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 (China); Tan, C.W., E-mail: tanchengwen@bit.edu.cn [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 (China); China Astronaut Research and Training Center, Beijing 100094 (China); Yu, X.D. [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 (China); China Astronaut Research and Training Center, Beijing 100094 (China); Nie, Z.H. [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 (China); Ma, H.L. [China Astronaut Research and Training Center, Beijing 100094 (China); Cai, H.N. [School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081 (China)

2016-12-15

The tungsten single crystal has many excellent properties, namely a high melting point, high anti-creeping strength. Chemical vapor transportation deposition (CVTD) is a possible approach to achieve large-sized W single crystals for high-temperature application such as the cathode of a thermionic energy converter. In this work, CVTD W coatings were deposited on the monocrystalline molybdenum substrate (a tube with < 111 > axial crystalline orientation) using WCl{sub 6} as a transport medium. The microstructures of the coatings were investigated by a scanning electron microscope (SEM) and electron backscatter diffraction (EBSD). The as-deposited coatings are hexagonal prisms—rough surfaces perpendicular to < 110 > with alternating hill-like bulges and pits at the side edges of the prisms, and flat surfaces perpendicular to < 112 > with arc-shaped terraces at the side faces. This can be explained by two-dimensional nucleation -mediated lateral growth model. Some parts of the coatings contain hillocks of an exotic morphology (noted as “abnormal growth”). The authors hypothesize that the abnormal growth is likely caused by the defects of the Mo substrate, which facilitate W nucleation sites, cause orientation difference, and may even form boundaries in the coatings. A dislocation density of 10{sup 6} to 10{sup 7} (counts/cm{sup 2}) was revealed by an etch-pit method and synchrotron X-ray diffraction. As the depositing temperature rises, the dislocation density decreases, and no sub-boundaries are found on samples deposited over 1300 °C, as a result of atom diffusion and dislocation climbing. - Highlights: •The varied growth rate causes the different morphologies of different planes. •The W coating is a single crystal when only single hillocks appear. •The (110) plane tends to have the lowest dislocation density. •The dislocation density tends to decrease as the temperature increases.

On the tungsten single crystal coatings achieved by chemical vapor transportation deposition

International Nuclear Information System (INIS)

Shi, J.Q.; Shen, Y.B.; Yao, S.Y.; Zhang, P.J.; Zhou, Q.; Guo, Y.Z.; Tan, C.W.; Yu, X.D.; Nie, Z.H.; Ma, H.L.; Cai, H.N.

2016-01-01

The tungsten single crystal has many excellent properties, namely a high melting point, high anti-creeping strength. Chemical vapor transportation deposition (CVTD) is a possible approach to achieve large-sized W single crystals for high-temperature application such as the cathode of a thermionic energy converter. In this work, CVTD W coatings were deposited on the monocrystalline molybdenum substrate (a tube with < 111 > axial crystalline orientation) using WCl 6 as a transport medium. The microstructures of the coatings were investigated by a scanning electron microscope (SEM) and electron backscatter diffraction (EBSD). The as-deposited coatings are hexagonal prisms—rough surfaces perpendicular to < 110 > with alternating hill-like bulges and pits at the side edges of the prisms, and flat surfaces perpendicular to < 112 > with arc-shaped terraces at the side faces. This can be explained by two-dimensional nucleation -mediated lateral growth model. Some parts of the coatings contain hillocks of an exotic morphology (noted as “abnormal growth”). The authors hypothesize that the abnormal growth is likely caused by the defects of the Mo substrate, which facilitate W nucleation sites, cause orientation difference, and may even form boundaries in the coatings. A dislocation density of 10 6 to 10 7 (counts/cm 2 ) was revealed by an etch-pit method and synchrotron X-ray diffraction. As the depositing temperature rises, the dislocation density decreases, and no sub-boundaries are found on samples deposited over 1300 °C, as a result of atom diffusion and dislocation climbing. - Highlights: •The varied growth rate causes the different morphologies of different planes. •The W coating is a single crystal when only single hillocks appear. •The (110) plane tends to have the lowest dislocation density. •The dislocation density tends to decrease as the temperature increases.

Chitosan Derivatives/Calcium Carbonate Composite Capsules Prepared by the Layer-by-Layer Deposition Method

Directory of Open Access Journals (Sweden)

Takashi Sasaki

2008-01-01

Full Text Available Core/shell capsules composed of calcium carbonate whisker core (rod-like shape and chitosan/chitosansulfate shell were prepared by the layer-by-layer deposition technique. Two chitosan samples of different molecular weights (Mw=9.7×104 and 1.09×106g·mol-1 were used as original materials. Hollow capsules were also obtained by dissolution of the core in hydrochloric acid. Electron microscopy revealed that the surface of the shell is rather ragged associated with some agglomerates. The shell thickness l obeys a linear relation with respect to the number of deposited layers m as l=md+a(a>0. The values of d (thickness per layer were 4.0 and 1.0 nm for the higher and lower Mw chitosan materials, respectively, both of which are greater than the thickness of the monolayer. The results suggest that the feature of the deposition does not obey an ideal homogeneous monolayer-by-monolayer deposition mechanism. Shell crosslinked capsules were also prepared via photodimerization reaction of cinnamoyl groups after a deposition of cinnamoyl chitosan to the calcium carbonate whisker core. The degree of crosslink was not enough to stabilize the shell structure, and hollow capsule was not obtained.

Fracture and Residual Characterization of Tungsten Carbide Cobalt Coatings on High Strength Steel

National Research Council Canada - National Science Library

Parker, Donald S

2003-01-01

Tungsten carbide cobalt coatings applied via high velocity oxygen fuel thermal spray deposition are essentially anisotropic composite structures with aggregates of tungsten carbide particles bonded...

Tungsten fibre-reinforced composites for advanced plasma facing components

Directory of Open Access Journals (Sweden)

R. Neu

2017-08-01

Full Text Available The European Fusion Roadmap foresees water cooled plasma facing components in a first DEMO design in order to provide enough margin for the cooling capacity and to only moderately extrapolate the technology which was developed and tested for ITER. In order to make best use of the water cooling concept copper (Cu and copper-chromium-zirconium alloy (CuCrZr are envisaged as heat sink whereas as armour tungsten (W based materials will be used. Combining both materials in a high heat flux component asks for an increase of their operational range towards higher temperature in case of Cu/CuCrZr and lower temperatures for W. A remedy for both issues- brittleness of W and degrading strength of CuCrZr- could be the use of W fibres (Wf in W and Cu based composites. Fibre preforms could be manufactured with industrially viable textile techniques. Flat textiles with a combination of 150/70 µm W wires have been chosen for layered deposition of tungsten-fibre reinforced tungsten (Wf/W samples and tubular multi-layered braidings with W wire thickness of 50 µm were produced as a preform for tungsten-fibre reinforced copper (Wf /Cu tubes. Cu melt infiltration was performed together with an industrial partner resulting in sample tubes without any blowholes. Property estimation by mean field homogenisation predicts strongly enhanced strength of the Wf/CuCrZr composite compared to its pure CuCrZr counterpart. Wf /W composites show very high toughness and damage tolerance even at room temperature. Cyclic load tests reveal that the extrinsic toughening mechanisms counteracting the crack growth are active and stable. FEM simulations of the Wf/W composite suggest that the influence of fibre debonding, which is an integral part of the toughening mechanisms, and reduced thermal conductivity of the fibre due to the necessary interlayers do not strongly influence the thermal properties of future components.

Synthesis of electric discharge alloyed nickel–tungsten coating on tool steel and its tribological studies

International Nuclear Information System (INIS)

Arun, Ilangovan; Duraiselvam, Muthukannan; Senthilkumar, V.; Narayanasamy, R.; Anandakrishnan, V.

2014-01-01

Highlights: • Electrical discharge alloying/coating made on AISI D2 tool steel. • The hardness of EDA layer is three to four time higher than the base material. • The dry sliding wear tests performed on EDA layer at different temperatures. • The alloyed layer acts as a self-lubricant at higher temperature. - Abstract: The present study examines the method of depositing nickel and tungsten on die steel surface by means of dispersing these elements in dielectric fluid in an electrical discharge alloying (EDA) process. The modified surface was mechanically and metallurgically characterized using Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray spectroscopy (EDX), microhardness tester and Pin-on-disc tribometer. The phase transformations that occurred during EDA process were evaluated by XRD. The deposition of Ni and W on die steel surfaces yielded minimal cracks with excellent metallurgical bonding. Higher hardness (∼1059 HV 0.3 ) with little brittleness resulted in superior wear resistance properties, a property which was retained even at elevated temperature

Atomic Layer Deposition of Chemical Passivation Layers and High Performance Anti-Reflection Coatings on Back-Illuminated Detectors

Science.gov (United States)

Hoenk, Michael E. (Inventor); Greer, Frank (Inventor); Nikzad, Shouleh (Inventor)

2014-01-01

A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

Vaporization of tungsten-metal in steam at high temperatures

International Nuclear Information System (INIS)

Greene, G.A.; Finfrock, C.C.

2000-01-01

system. The aerosol formed a fine white smoke of tungsten-oxide which was visible to the eye as it condensed in the laminar boundary layer of steam which flowed along the surface of the rod. The aerosol continued to flow as a smoke tube downstream of the rod, flowing coaxially along the centerline axis of the quartz glass tube and depositing by impaction along the outside of a bend and at sudden area contractions in the piping. The vaporization rate data from the 17 experiments which exceeded the vaporization threshold temperature are shown in Figure 5 in the form of vaporization rates (g/cm 2 s) vs. inverse temperature (K -1 ). Two correlations to the present data are presented and compared to a published correlation by Kilpatrick and Lott. The differences are discussed

Electron beam deposition system causing little damage to organic layers

Energy Technology Data Exchange (ETDEWEB)

Yamada, Minoru [Research Center for Solar Energy Chemistry, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Business Incubation Department, Hitachi Zosen Corporation, 2-11 Funamachi 2-Chome, Taisho-ku, Osaka 551-0022 (Japan); Matsumura, Michio, E-mail: matsu@chem.es.osaka-u.ac.jp [Research Center for Solar Energy Chemistry, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Maeda, Yasuhiro [Business Incubation Department, Hitachi Zosen Corporation, 2-11 Funamachi 2-Chome, Taisho-ku, Osaka 551-0022 (Japan)

2011-07-29

Conditions for deposition of an aluminum (Al) layer on an organic light-emitting layer with an electron beam (EB) deposition system were optimized with respect to deposition rate and damage to organic layers. The damage to the organic layers was found to be mostly caused by X-rays emitted from a target bombarded with accelerated electrons. In order to decrease the X-ray intensity while maintaining a high deposition rate, we used an EB source which emits high-density EB at low acceleration voltage. In addition, we inserted a heat reflector and a sintered-carbon liner between the Al target and copper crucible to improve heat insulation. As a result, the voltage needed for the deposition of Al electrodes at a rate of about 8 nm/s was lowered from normal voltages of 2.0 kV or higher to as low as 1.5 kV. To reduce the number of electrons hitting the substrate, we set pole pieces near the target and an electron trap in the chamber. The devices on which Al electrodes were deposited with the EB system showed almost the same properties as those of devices on which the Al electrodes were deposited by a resistive-heating method.

Electron beam induced coloration and luminescence in layered structure of WO3 thin films grown by pulsed dc magnetron sputtering

International Nuclear Information System (INIS)

Karuppasamy, A.; Subrahmanyam, A.

2007-01-01

Tungsten oxide thin films have been deposited by pulsed dc magnetron sputtering of tungsten in argon and oxygen atmosphere. The as-deposited WO 3 film is amorphous, highly transparent, and shows a layered structure along the edges. In addition, the optical properties of the as-deposited film show a steplike behavior of extinction coefficient. However, the electron beam irradiation (3.0 keV) of the as-deposited films results in crystallization, coloration (deep blue), and luminescence (intense red emission). The above changes in physical properties are attributed to the extraction of oxygen atoms from the sample and the structural modifications induced by electron bombardment. The present method of coloration and luminescence has a potential for fabricating high-density optical data storage device

Study on the oxidation and reduction of tungsten surface for sub-50 nm patterning process

Energy Technology Data Exchange (ETDEWEB)

Kim, Jong Kyu; Nam, Seok Woo; Cho, Sung Il; Jhon, Myung S.; Min, Kyung Suk; Kim, Chan Kyu; Jung, Ho Bum; Yeom, Geun Young [Memory Division Semiconductor Business, Samsung Electronics, San No. 16 Banwol-Ri, Taean-Eup, Hwasung-City, Gyeonggi-Do 449-711, South Korea and Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of); Memory Division Semiconductor Business, Samsung Electronics, San No. 16 Banwol-Ri, Taean-Eup, Hwasung-City, Gyeonggi-Do 449-711 (Korea, Republic of); Department of Chemical Engineering and Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States); Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746 (Korea, Republic of)

2012-11-15

The oxidation characteristics of tungsten line pattern during the carbon-based mask-layer removal process using oxygen plasmas have been investigated for sub-50 nm patterning processes, in addition to the reduction characteristics of the WO{sub x} layer formed on the tungsten line surface using hydrogen plasmas. The surface oxidation of tungsten lines during the mask layer removal process could be minimized by using low-temperature (300 K) plasma processing for the removal of the carbon-based material. Using this technique, the thickness of WO{sub x} on the tungsten line could be decreased to 25% compared to results from high-temperature processing. The WO{sub x} layer could also be completely removed at a low temperature of 300 K using a hydrogen plasma by supplying bias power to the tungsten substrate to provide a activation energy for the reduction. When this oxidation and reduction technique was applied to actual 40-nm-CD device processing, the complete removal of WO{sub x} formed on the sidewall of tungsten line could be observed.

Tungsten migration studies by controlled injection of volatile compounds

Energy Technology Data Exchange (ETDEWEB)

Rubel, M., E-mail: rubel@kth.se [Royal Institute of Technology (KTH), Association EURATOM-VR, Stockholm (Sweden); Coenen, J. [IEK-4, Plasma Physics, Forschungszentrum Jülich, Association EURATOM-FZJ, Jülich (Germany); Ivanova, D. [Royal Institute of Technology (KTH), Association EURATOM-VR, Stockholm (Sweden); Möller, S. [IEK-4, Plasma Physics, Forschungszentrum Jülich, Association EURATOM-FZJ, Jülich (Germany); Petersson, P. [Royal Institute of Technology (KTH), Association EURATOM-VR, Stockholm (Sweden); Brezinsek, S.; Kreter, A.; Philipps, V.; Pospieszczyk, A.; Schweer, B. [IEK-4, Plasma Physics, Forschungszentrum Jülich, Association EURATOM-FZJ, Jülich (Germany)

2013-07-15

Volatile tungsten hexa-fluoride was locally injected into the TEXTOR tokamak as a marker for material migration studies. The injection was accompanied by puffing N-15 rare isotope as a nitrogen tracer in discharges with edge cooling by impurity seeding. The objective was to assess material balance by qualitative and quantitative determination of a global and local deposition pattern, material mixing effects and fluorine residence in plasma-facing components. Spectroscopy and ex situ ion beam analysis techniques were used. Tungsten was detected on all types of limiter tiles and short-term probes retrieved from the vessel. Over 80% of the injected W was identified. The largest tungsten concentration, 1 × 10{sup 18} cm{sup −2}, was in the vicinity of the gas inlet. Co-deposits contained tungsten and a mix of light isotopes: H, D, He-4, B-10, B-11, C-12, C-13, N-14, N-15, O-16 and small quantities of F-19 thus showing that both He and nitrogen are trapped following wall conditioning (He glow) and edge cooling.

Large-area few-layer MoS 2 deposited by sputtering

KAUST Repository

Huang, Jyun-Hong

2016-06-06

Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).

Laser detritiation and co-deposited layer characterisation for future ITER Installation

International Nuclear Information System (INIS)

Semerok, Alexandre; Brygo, Francois; Fomichev, Sergey V.; Champonnois, Francois; Weulersse, Jean-Marc; Thro, Pierre-Yves; Fichet, Pascal; Grisolia, Christian

2006-01-01

The experimental equipment in combination with pulsed Nd-YAG lasers was developed and applied to investigate co-deposited layer characterisation and ablation. Heating and ablation regimes were distinguished by ablation threshold fluence that was determined experimentally for graphite samples from TexTor (Germany) and TORE SUPRA (France) tokamaks. With 100 ns pulses, the ablation threshold for graphite substrate (2.5±0.5 J/cm 2 ) was much higher than the one for co-deposited layer (0.4±0.1 J cm -2 ). These threshold features are very promising to ensure self-controlled laser cleaning without substrate surface damage. The obtained optimal conditions (laser fluence F=1-2 J/cm 2 , 10-20 kHz repetition rate) were applied for co-deposited layer cleaning. The TexTor 50 μm thickness layer was almost completely removed after a single scanning without any damage of the graphite substrate. Cleaning rate of 0.2 m 2 /hour was demonstrated experimentally for 20 W mean laser power. A theoretical model of a complex surface heating (graphite or metal with a co-deposited layer) was developed to explain the experimental results and to obtain laser cleaning optimisation. A good agreement of the theoretical data with the experimental results was obtained. The studies on LIBS method for co-deposited layer characterisation have determined the analytical spectral lines for hydrogen, carbon, and other impurities (B, Fe, Si, and Cu) in TexTor graphite tile. The obtained results should be regarded optimistic for co-deposited layers characterisation by LIBS method. The development of certain laser methods and their application for in-situ detritiation and co-deposited layer characterisation are presented and discussed. (authors)

Influence of surface morphology and microstructure on performance of CVD tungsten coating under fusion transient thermal loads

Energy Technology Data Exchange (ETDEWEB)

Lian, Youyun, E-mail: lianyy@swip.ac.cn [Southwestern Institute of Physics, Chengdu (China); Liu, Xiang; Wang, Jianbao; Feng, Fan [Southwestern Institute of Physics, Chengdu (China); Lv, Yanwei; Song, Jiupeng [China National R& D Center for Tungsten Technology, Xiamen Tungsten Co. Ltd, 361026 Xiamen (China); Chen, Jiming [Southwestern Institute of Physics, Chengdu (China)

2016-12-30

Highlights: • Thick CVD-W coatingswere deposited at a rapid growth rate. • The polished CVD-W coatings have highly textured structure and exhibited a very strong preferred orientation. • The polished CVD tungsten coatings show superior thermal shock resistance as compared with that of the as-deposited coatings. • The crack formation of the polished CVD-W was almost suppressed at an elevated temperature. - Abstract: Thick tungsten coatings have been deposited by chemical vapor deposition (CVD) at a rapid growth rate. A series of tungsten coatings with different thickness and surface morphology were prepared. The surface morphology, microstructure and preferred orientation of the CVD tungsten coatings were investigated. Thermal shock analyses were performed by using an electron beam facility to study the influence of the surface morphology and the microstructure on the thermal shock resistance of the CVD tungsten coatings. Repetitive (100 pulses) ELMs-like thermal shock loads were applied at various temperatures between room temperature and 600 °C with pulse duration of 1 ms and an absorbed power density of up to 1 GW/m{sup 2}. The results of the tests demonstrated that the specific surface morphology and columnar crystal structure of the CVD tungsten have significant influence on the surface cracking threshold and crack propagation of the materials. The CVD tungsten coatings with a polished surface show superior thermal shock resistance as compared with that of the as-deposited coatings with a rough surface.

The electrodeposition of niobium on tungsten

International Nuclear Information System (INIS)

Taylor, R.G.

1977-03-01

The electrodeposition of niobium on a tungsten substrate has been demonstrated by electrolysis of an alkali metal fluoride melt. The deposit produced was non-porous, coherent and formed a good bond to the substrate. (author)

In situ thermal imaging and three-dimensional finite element modeling of tungsten carbide-cobalt during laser deposition

International Nuclear Information System (INIS)

Xiong Yuhong; Hofmeister, William H.; Cheng Zhao; Smugeresky, John E.; Lavernia, Enrique J.; Schoenung, Julie M.

2009-01-01

Laser deposition is being used for the fabrication of net shapes from a broad range of materials, including tungsten carbide-cobalt (WC-Co) cermets (composites composed of a metallic phase and a hard refractory phase). During deposition, an unusual thermal condition is created for cermets, resulting in rather complex microstructures. To provide a fundamental insight into the evolution of such microstructures, we studied the thermal behavior of WC-Co cermets during laser deposition involving complementary results from in situ high-speed thermal imaging and three-dimensional finite element modeling. The former allowed for the characterization of temperature gradients and cooling rates in the vicinity of the molten pool, whereas the latter allowed for simulation of the entire sample. By combining the two methods, a more robust analysis of the thermal behavior was achieved. The model and the imaging results correlate well with each other and with the alternating sublayers observed in the microstructure.

Irradiation effects in tungsten-copper laminate composite

Energy Technology Data Exchange (ETDEWEB)

Garrison, L.M., E-mail: garrisonlm@ornl.gov [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Katoh, Y. [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Snead, L.L. [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Byun, T.S. [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Pacific Northwest National Laboratory, Richland, WA 99352 (United States); Reiser, J.; Rieth, M. [Karlsruhe Institute of Technology, Karlsruhe (Germany)

2016-12-01

Tungsten-copper laminate composite has shown promise as a structural plasma-facing component as compared to tungsten rod or plate. The present study evaluated the tungsten-copper composite after irradiation in the High Flux Isotope Reactor (HFIR) at temperatures of 410–780 °C and fast neutron fluences of 0.02–9.0 × 10{sup 25} n/m{sup 2}, E > 0.1 MeV, 0.0039–1.76 displacements per atom (dpa) in tungsten. Tensile tests were performed on the composites, and the fracture surfaces were analyzed with scanning electron microscopy. Before irradiation, the tungsten layers had brittle cleavage failure, but the overall composite had 15.5% elongation at 22 °C. After only 0.0039 dpa this was reduced to 7.7% elongation, and no ductility was observed after 0.2 dpa at all irradiation temperatures when tensile tested at 22 °C. For elevated temperature tensile tests after irradiation, the composite only had ductile failure at temperatures where the tungsten was delaminating or ductile. - Highlights: • Fusion reactors need a tough, ductile tungsten plasma-facing material. • The unirradiated tungsten-copper laminate is more ductile than tungsten alone. • After neutron irradiation, the composite has significantly less ductility. • The tungsten behavior appears to dominate the overall composite behavior.

Characteristics of tungsten oxide thin films prepared on the flexible substrates using pulsed laser deposition

International Nuclear Information System (INIS)

Suda, Yoshiaki; Kawasaki, Hiroharu; Ohshima, Tamiko; Yagyuu, Yoshihito

2008-01-01

Tungsten trioxide (WO 3 ) thin films have been prepared on the flexible indium tin oxide (ITO) substrates by pulsed laser deposition (PLD) using WO 3 targets in oxygen gas. Color of the WO 3 film on the flexible ITO substrates depends on the oxygen gas mixture. The plasma plume produced by PLD using a Nd:YAG laser and WO 3 target is investigated by temporal and spatial-resolved optical emission spectroscopy. WO 3 films prepared on the flexible ITO substrates show electrochromic properties, even when the substrates are bent. The film color changes from blue to transparent within 10-20 s after the applied DC voltage is turned off

Effect of layer thickness on the thermal release from Be-D co-deposited layers

Science.gov (United States)

Baldwin, M. J.; Doerner, R. P.

2014-08-01

The results of previous work (Baldwin et al 2013 J. Nucl. Mater. 438 S967-70 and Baldwin et al 2014 Nucl. Fusion 54 073005) are extended to explore the influence of layer thickness on the thermal D2 release from co-deposited Be-(0.05)D layers produced at ˜323 K. Bake desorption of layers of thickness 0.2-0.7 µm are explored with a view to examine the influence of layer thickness on the efficacy of the proposed ITER bake procedure, to be carried out at the fixed temperatures of 513 K on the first wall and 623 K in the divertor. The results of experiment and modelling with the TMAP-7 hydrogen transport code, show that thicker Be-D co-deposited layers are relatively more difficult to desorb (time-wise) than thinner layers with the same concentrations of intrinsic traps and retained hydrogen isotope fraction.

OPAL Silicon Tungsten Luminometer

CERN Multimedia

OPAL was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The Silicon Tungsten Luminometer was part of OPAL's calorimeter which was used to measure the energy of particles. Most particles end their journey in calorimeters. These detectors measure the energy deposited when particles are slowed down and stopped.

The gate oxide integrity of CVD tungsten polycide

International Nuclear Information System (INIS)

Wu, N.W.; Su, W.D.; Chang, S.W.; Tseng, M.F.

1988-01-01

CVD tungsten polycide has been demonstrated as a good gate material in recent very large scale integration (VLSI) technology. CVD tungsten silicide offers advantages of low resistivity, high temperature stability and good step coverage. On the other hand, the polysilicon underlayer preserves most characteristics of the polysilicon gate and acts as a stress buffer layer to absorb part of the thermal stress origin from the large thermal expansion coefficient of tungsten silicide. Nevertheless, the gate oxide of CVD tungsten polycide is less stable or reliable than that of polysilicon gate. In this paper, the gate oxide integrity of CVD tungsten polycide with various thickness combinations and different thermal processes have been analyzed by several electrical measurements including breakdown yield, breakdown fluence, room temperature TDDB, I-V characteristics, electron traps and interface state density

Fabrication of Hyperbolic Metamaterials using Atomic Layer Deposition

DEFF Research Database (Denmark)

Shkondin, Evgeniy

 technology allowing thickness control on atomic scale. As the deposition relies on a surface reaction, conformal pinhole free films can be deposited on various substrates with advanced topology. This method has been a central theme of the project and a core fabrication technique of plasmonic and dielectric...... in dielectric host, the fabrication is still challenging, since ultrathin, continuous, pinhole free nanometer-scale coatings are desired. The required high-quality thin layers have been fabricated using atomic layer deposition (ALD). It is a relatively new, cyclic, self-limiting thin film deposition......, especially in the infrared range, result in high loss and weak connement to the surface. Additionally, the most implemented metals in plasmonics such as Au and Ag are diffcult to pattern at nanoscale due to their limited chemistry, adhesion or oxidation issues. Therefore the implementation of...

Characterization of plasma coated tungsten heavy alloy

International Nuclear Information System (INIS)

Bose, A.; Kapoor, D.; Lankford, J. Jr.; Nicholls, A.E.

1996-01-01

The detrimental environmental impact of Depleted Uranium-based penetrators have led to tremendous development efforts in the area of tungsten heavy alloy based penetrators. One line of investigation involves the coating of tungsten heavy alloys with materials that are prone to shear localization. Plasma spraying of Inconel 718 and 4340 steel have been used to deposit dense coatings on tungsten heavy alloy substrates. The aim of the investigation was to characterize the coating primarily in terms of its microstructure and a special push-out test. The paper describes the results of the push-out tests and analyzes some of the possible failure mechanisms by carrying out microstructural characterization of the failed rings obtained from the push out tests

Low temperature processing of tungsten-fibre high-strength composite

International Nuclear Information System (INIS)

Semrau, W.M.

2001-01-01

A tungsten nickel/iron compound with a high tungsten content up to over 90 percent by volume of tungsten and an ideal distribution of the nickel-iron multilayer-matrix avoiding tungsten - tungsten interfaces, has been processed without the use of any sintering process and thus resulted in avoiding temperatures of above 700 o C during the entire manufacturing process. An electrochemical coating of coarse tungsten powder with alternating layers of nickel and iron and a forging process at temperatures not exceeding 650 o C resulted in a high strength compound, which easily could be altered into a tungsten fiber compound with a fiber-length to fiber-diameter ratio of more than 10 3 . From the viewpoint of the metallurgist, easier handling systems are obtained when both a liquid phase and high temperatures with their risks for grain structures and grain boundaries are lacking. (author)

Stress and stability of sputter deposited A-15 and bcc crystal structure tungsten thin films

Energy Technology Data Exchange (ETDEWEB)

O' Keefe, M.J.; Stutz, C.E.

1997-07-01

Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of temperatures cycles in a Flexus 2900 thin film stress measurement system. The as-deposited film stress was found to be a function of the sputtering pressure and presputter time; under conditions in which the as-deposited stress of the film was {approximately}1.5 GPa compressive delamination of the W film from the substrate was observed. Data from the thermal studies indicated that bcc film stress was not affected by annealing but transformation of the A-15 structure resulted in a large tensile increase in the stress of the film, regardless of the as-deposited stress of the film. In several instances, complete transformation of the A-15 structure into the bcc phase resulted in {ge}1 GPa tensile increase in film stress.

Stress and stability of sputter deposited A-15 and bcc crystal structure tungsten thin films

International Nuclear Information System (INIS)

O'Keefe, M.J.; Stutz, C.E.

1997-01-01

Magnetron sputter deposition was used to fabricate body centered cubic (bcc) and A-15 crystal structure W thin films. Previous work demonstrated that the as-deposited crystal structure of the films was dependent on the deposition parameters and that the formation of a metastable A-15 structure was favored over the thermodynamically stable bcc phase when the films contained a few atomic percent oxygen. However, the A-15 phase was shown to irreversibly transform into the bcc phase between 500 C and 650 C and that a significant decrease in the resistivity of the metallic films was measured after the transformation. The current investigation of 150 nm thick, sputter deposited A-15 and bcc tungsten thin films on silicon wafers consisted of a series of experiments in which the stress, resistivity and crystal structure of the films was measured as a function of temperatures cycles in a Flexus 2900 thin film stress measurement system. The as-deposited film stress was found to be a function of the sputtering pressure and presputter time; under conditions in which the as-deposited stress of the film was approximately1.5 GPa compressive delamination of the W film from the substrate was observed. Data from the thermal studies indicated that bcc film stress was not affected by annealing but transformation of the A-15 structure resulted in a large tensile increase in the stress of the film, regardless of the as-deposited stress of the film. In several instances, complete transformation of the A-15 structure into the bcc phase resulted in ge1 GPa tensile increase in film stress

A combined scanning tunneling microscope-atomic layer deposition tool.

Science.gov (United States)

Mack, James F; Van Stockum, Philip B; Iwadate, Hitoshi; Prinz, Fritz B

2011-12-01

We have built a combined scanning tunneling microscope-atomic layer deposition (STM-ALD) tool that performs in situ imaging of deposition. It operates from room temperature up to 200 °C, and at pressures from 1 × 10(-6) Torr to 1 × 10(-2) Torr. The STM-ALD system has a complete passive vibration isolation system that counteracts both seismic and acoustic excitations. The instrument can be used as an observation tool to monitor the initial growth phases of ALD in situ, as well as a nanofabrication tool by applying an electric field with the tip to laterally pattern deposition. In this paper, we describe the design of the tool and demonstrate its capability for atomic resolution STM imaging, atomic layer deposition, and the combination of the two techniques for in situ characterization of deposition.

ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

International Nuclear Information System (INIS)

Tynell, Tommi; Karppinen, Maarit

2014-01-01

Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline

ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi

2014-01-31

Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline.

Compositional characterization of atomic layer deposited alumina

International Nuclear Information System (INIS)

Philip, Anu; Thomas, Subin; Kumar, K. Rajeev

2014-01-01

As the microelectronic industry demands feature size in the order of few and sub nanometer regime, the film composition and other film properties become critical issues and ALD has emerged as the choice of industry. Aluminum oxide is a material with wide applications in electronic and optoelectronic devices and protective and ion barrier layers. Al 2 O 3 is an excellent dielectric because of its large band gap (8.7eV), large band offsets with silicon. We have deposited thin layers of alumina on silicon wafer (p-type) for gate dielectric applications by ALD technique and compositional characterizations of the deposited thin films were done using EDS, XPS and FTIR spectra

Compositional characterization of atomic layer deposited alumina

Energy Technology Data Exchange (ETDEWEB)

Philip, Anu; Thomas, Subin; Kumar, K. Rajeev [Department of Instrumentation, Cochin University of Science and Technology, Cochin-22, Kerala (India)

2014-01-28

As the microelectronic industry demands feature size in the order of few and sub nanometer regime, the film composition and other film properties become critical issues and ALD has emerged as the choice of industry. Aluminum oxide is a material with wide applications in electronic and optoelectronic devices and protective and ion barrier layers. Al{sub 2}O{sub 3} is an excellent dielectric because of its large band gap (8.7eV), large band offsets with silicon. We have deposited thin layers of alumina on silicon wafer (p-type) for gate dielectric applications by ALD technique and compositional characterizations of the deposited thin films were done using EDS, XPS and FTIR spectra.

Effect of layer thickness on the thermal release from Be–D co-deposited layers

International Nuclear Information System (INIS)

Baldwin, M.J.; Doerner, R.P.

2014-01-01

The results of previous work (Baldwin et al 2013 J. Nucl. Mater. 438 S967–70 and Baldwin et al 2014 Nucl. Fusion 54 073005) are extended to explore the influence of layer thickness on the thermal D 2 release from co-deposited Be–(0.05)D layers produced at ∼323 K. Bake desorption of layers of thickness 0.2–0.7 µm are explored with a view to examine the influence of layer thickness on the efficacy of the proposed ITER bake procedure, to be carried out at the fixed temperatures of 513 K on the first wall and 623 K in the divertor. The results of experiment and modelling with the TMAP-7 hydrogen transport code, show that thicker Be–D co-deposited layers are relatively more difficult to desorb (time-wise) than thinner layers with the same concentrations of intrinsic traps and retained hydrogen isotope fraction. (paper)

The first step in layer-by-layer deposition: Electrostatics and/or non-electrostatics?

NARCIS (Netherlands)

Lyklema, J.; Deschênes, L.

2011-01-01

A critical discussion is presented on the properties and prerequisites of adsorbed polyelectrolytes that have to function as substrates for further layer-by-layer deposition. The central theme is discriminating between the roles of electrostatic and non-electrostatic interactions. In order to

A process for electrodeposition of layers of niobium, vanadium, molybdenum or tungsten, or of their alloys

International Nuclear Information System (INIS)

Diepers, H.; Schmidt, O.

1977-01-01

An improvement is proposed for the process for electrodeposition of layers of niobium, vanadium, molybdenum or tungsten or of their alloys from molten-salt electrolytes (fluorid melts) which is to increase the quality of layers in order to obtain regular thickness and smooth surfaces. According to the invention, a pre-separation is executed on an auxiliary cathode before the (preheated) cathode is immersed. The cathode is only charged for separation after the adjustment of a constant anode potential. It is an advantage that the auxiliary cathode is mechanically and electrically connected with the cathode. As an electrolyte, a mixture of niobium fluorides and a eustetic mixture of potassium fluorides, sodium fluorides and lithium fluorides are particularly suitable for the electrodeposition of miobium. (UWI) [de

In-situ deposition of sacrificial layers during ion implantation

International Nuclear Information System (INIS)

Anders, A.; Anders, S.; Brown, I.G.; Yu, K.M.

1995-02-01

The retained dose of implanted ions is limited by sputtering. It is known that a sacrificial layer deposited prior to ion implantation can lead to an enhanced retained dose. However, a higher ion energy is required to obtain a similar implantation depth due to the stopping of ions in the sacrificial layer. It is desirable to have a sacrificial layer of only a few monolayers thickness which can be renewed after it has been sputtered away. We explain the concept and describe two examples: (i) metal ion implantation using simultaneously a vacuum arc ion source and filtered vacuum arc plasma sources, and (ii) Metal Plasma Immersion Ion Implantation and Deposition (MePIIID). In MePIIID, the target is immersed in a metal or carbon plasma and a negative, repetitively pulsed bias voltage is applied. Ions are implanted when the bias is applied while the sacrificial layer suffers sputtering. Low-energy thin film deposition - repair of the sacrificial layer -- occurs between bias pulses. No foreign atoms are incorporated into the target since the sacrificial film is made of the same ion species as used in the implantation phase

Tungsten nano-tendril growth in the Alcator C-Mod divertor

International Nuclear Information System (INIS)

Wright, G.M.; Brunner, D.; Labombard, B.; Lipschultz, B.; Terry, J.L.; Whyte, D.G.; Baldwin, M.J.; Doerner, R.P.

2012-01-01

Growth of tungsten nano-tendrils (‘fuzz’) has been observed for the first time in the divertor region of a high-power density tokamak experiment. After 14 consecutive helium L-mode discharges in Alcator C-Mod, the tip of a tungsten Langmuir probe at the outer strike point was fully covered with a layer of nano-tendrils. The thickness of the individual nano-tendrils (50–100 nm) and the depth of the layer (600 ± 150 nm) are consistent with observations from experiments on linear plasma devices. The observation of tungsten fuzz in a tokamak may have important implications for material erosion, dust formation, divertor lifetime and tokamak operations in next-step devices. (letter)

Atomic layer deposition: prospects for solar cell manufacturing

NARCIS (Netherlands)

Kessels, W.M.M.; Hoex, B.; Sanden, van de M.C.M.

2008-01-01

Atomic layer deposition (ALD) is a thin film growth technology that is capable of depositing uniform and conformal films on complex, three-dimensional objects with atomic precision. ALD is a rapidly growing field and it is currently at the verge of being introduced in the semiconductor industry.

Superhard Rhenium/Tungsten Diboride Solid Solutions.

Science.gov (United States)

Lech, Andrew T; Turner, Christopher L; Lei, Jialin; Mohammadi, Reza; Tolbert, Sarah H; Kaner, Richard B

2016-11-02

Rhenium diboride (ReB 2 ), containing corrugated layers of covalently bonded boron, is a superhard metallic compound with a microhardness reaching as high as 40.5 GPa (under an applied load of 0.49 N). Tungsten diboride (WB 2 ), which takes a structural hybrid between that of ReB 2 and AlB 2 , where half of the boron layers are planar (as in AlB 2 ) and half are corrugated (as in ReB 2 ), has been shown not to be superhard. Here, we demonstrate that the ReB 2 -type structure can be maintained for solid solutions of tungsten in ReB 2 with tungsten content up to a surprisingly large limit of nearly 50 atom %. The lattice parameters for the solid solutions linearly increase along both the a- and c-axes with increasing tungsten content, as evaluated by powder X-ray and neutron diffraction. From micro- and nanoindentation hardness testing, all of the compositions within the range of 0-48 atom % W are superhard, and the bulk modulus of the 48 atom % solid solution is nearly identical to that of pure ReB 2 . These results further indicate that ReB 2 -structured compounds are superhard, as has been predicted from first-principles calculations, and may warrant further studies into additional solid solutions or ternary compounds taking this structure type.

Physical characterization of sputter-deposited amorphous tungsten oxynitride thin films

Energy Technology Data Exchange (ETDEWEB)

Nunez, O.R.; Moreno Tarango, A.J. [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States); Murphy, N.R. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base (WPAFB), Dayton, OH 45433 (United States); Phinney, L.C.; Hossain, K. [Amethyst Research Inc., 123 Case Circle, Ardmore, OK 73401 (United States); Ramana, C.V., E-mail: rvchintalapalle@utep.edu [Department of Mechanical Engineering, University of Texas at El Paso, El Paso, TX 79968 (United States)

2015-12-01

Tungsten oxynitride (W–O–N) thin films were deposited onto silicon (100) and quartz substrates using direct current (DC) sputtering. Composition variations in the W–O–N films were obtained by varying the nitrogen gas flow rate from 0 to 20 sccm, while keeping the total gas flow constant at 40 sccm using 20 sccm of argon with the balance comprised of oxygen. The resulting crystallinity, optical properties, and chemical composition of the DC sputtered W–O–N films were evaluated. All the W–O–N films measured were shown to be amorphous using X-ray diffraction. Spectrophotometry results indicate that the optical parameters, namely, the transmission magnitude and band gap (E{sub g}), are highly dependent on the nitrogen content in the reactive gas mixture. Within the W–O–N system, E{sub g} was able to be precisely tailored between 2.9 eV and 1.9 eV, corresponding to fully stoichiometric WO{sub 3} and highly nitrided W–O–N, respectively. Rutherford backscattering spectrometry (RBS) coupled with X-ray photoelectron spectroscopy (XPS) measurements indicate that the composition of the films varies from WO{sub 3} to W–O–N composite oxynitride films. - Highlights: • W–O–N films of ~ 100 nm thick were sputter-deposited by varying nitrogen gas flow rate. • Nitrogen incorporation into W-oxide is effective at or after 9 sccm flow rate of nitrogen. • The band gap significantly decreases from ~ 3.0 eV to ~ 2.1 eV with progressive increase in nitrogen content. • A composite oxide-semiconductor of W–O–N is proposed to explain the optical properties.

Relative influence of deposition and diagenesis on carbonate reservoir layering

Energy Technology Data Exchange (ETDEWEB)

Poli, Emmanuelle [Total E and P, Courbevoie (France); Javaux, Catherine [Total E and P, Pointe Noire (Congo)

2008-07-01

The architecture heterogeneities and petrophysical properties of carbonate reservoirs result from a combination of platform morphology, related depositional environments, relative sea level changes and diagenetic events. The reservoir layering built for static and dynamic modelling purposes should reflect the key heterogeneities (depositional or diagenetic) which govern the fluid flow patterns. The layering needs to be adapted to the goal of the modelling, ranging from full field computations of hydrocarbon volumes, to sector-based fine-scale simulations to test the recovery improvement. This paper illustrates various reservoir layering types, including schemes dominated by depositional architecture, and those more driven by the diagenetic overprint. The examples include carbonate platform reservoirs from different stratigraphic settings (Tertiary, Cretaceous, Jurassic and Permian) and different regions (Europe, Africa and Middle East areas). This review shows how significant stratigraphic surfaces (such as sequence boundaries or maximum flooding) with their associated facies shifts, can be often considered as key markers to constrain the reservoir layering. Conversely, how diagenesis (dolomitization and karst development), resulting in units with particular poroperm characteristics, may significantly overprint the primary reservoir architecture by generating flow units which cross-cut depositional sequences. To demonstrate how diagenetic processes can create reservoir bodies with geometries that cross-cut the depositional fabric, different types of dolomitization and karst development are illustrated. (author)

Textured strontium titanate layers on platinum by atomic layer deposition

International Nuclear Information System (INIS)

Blomberg, T.; Anttila, J.; Haukka, S.; Tuominen, M.; Lukosius, M.; Wenger, Ch.; Saukkonen, T.

2012-01-01

Formation of textured strontium titanate (STO) layers with large lateral grain size (0.2–1 μm) and low X-ray reflectivity roughness (∼ 1.36 nm) on Pt electrodes by industry proven atomic layer deposition (ALD) method is demonstrated. Sr(t-Bu 3 Cp) 2 , Ti(OMe) 4 and O 3 precursors at 250 °C were used to deposit Sr rich STO on Pt/Ti/SiO 2 /Si ∅200 mm substrates. After crystallization post deposition annealing at 600 °C in air, most of the STO grains showed a preferential orientation of the {001} plane parallel to the substrate surface, although other orientations were also present. Cross sectional and plan view transmission electron microscopy and electron diffraction analysis revealed more than an order of magnitude larger lateral grain sizes for the STO compared to the underlying multicrystalline {111} oriented platinum electrode. The combination of platinum bottom electrodes with ALD STO(O 3 ) shows a promising path towards the formation of single oriented STO film. - Highlights: ► Amorphous strontium titanate (STO) on platinum formed a textured film after annealing. ► Single crystal domains in 60 nm STO film were 0.2–1 μm wide. ► Most STO grains were {001} oriented.

Catalytic activity of tungsten carbide-carbon (WC@C) core-shell structured for ethanol electro-oxidation

Energy Technology Data Exchange (ETDEWEB)

Singla, Gourav, E-mail: gsinghla@gmail.com; Singh, K., E-mail: kusingh@thapar.edu; Pandey, O.P., E-mail: oppandey@thapar.edu

2017-01-15

In this study, carbon coated WC (WC@C) was synthesized through solvothermal reactions in the presence of reducing agent magnesium (Mg) by employing tungsten oxide (WO{sub 3}) as a precursor, acetone (C{sub 3}H{sub 6}O) as a carbon source. The formation of WC@C nano particles is confirmed by X-ray diffraction and Transmission electron microscopy. The thermal stability of the synthesized powder examined in air shows its stability up to 550 °C. In this method, in-situ produced outer carbon layer increase the surface area of materials which is 52.6 m{sup 2} g{sup −1} with pore volume 0.213 cm{sup 3} g{sup −1}. The Electrocatalytic activity of ethanol oxidation on a synthesized sample with and without Pt nano particles have been investigated using cyclic voltammetry (CV). The CV results show the enhancement in oxidation stability of WC@C in acidic media as well as better CO-tolerance for ethanol oxidation after the deposition of Pt nanoparticles as compared to without Pt nano particles. - Highlights: • Tungsten carbide nano powder was synthesized using acetone as carbon source. • In-situ produced outer carbon layer increase the surface area of materials. • Mesoporous WC with surface areas 52.6 m{sup 2}/g obtained. • Pt modified WC powder showed higher electrochemical stability. • Better CO-tolerance for ethanol oxidation after the deposition of Pt nanoparticles.

Scalable control program for multiprecursor flow-type atomic layer deposition system

Energy Technology Data Exchange (ETDEWEB)

Selvaraj, Sathees Kannan [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States); Takoudis, Christos G., E-mail: takoudis@uic.edu [Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 and Department of Bioengineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)

2015-01-01

The authors report the development and implementation of a scalable control program to control flow type atomic layer deposition (ALD) reactor with multiple precursor delivery lines. The program logic is written and tested in LABVIEW environment to control ALD reactor with four precursor delivery lines to deposit up to four layers of different materials in cyclic manner. The programming logic is conceived such that to facilitate scale up for depositing more layers with multiple precursors and scale down for using single layer with any one precursor in the ALD reactor. The program takes precursor and oxidizer exposure and purging times as input and controls the sequential opening and closing of the valves to facilitate the complex ALD process in cyclic manner. The program could be used to deposit materials from any single line or in tandem with other lines in any combination and in any sequence.

An effective approach to synthesize monolayer tungsten disulphide crystals using tungsten halide precursor

International Nuclear Information System (INIS)

Thangaraja, Amutha; Shinde, Sachin M.; Kalita, Golap; Tanemura, Masaki

2016-01-01

The synthesis of large-area monolayer tungsten disulphide (WS 2 ) single crystal is critical for realistic application in electronic and optical devices. Here, we demonstrate an effective approach to synthesize monolayer WS 2 crystals using tungsten hexachloride (WCl 6 ) as a solid precursor in atmospheric chemical vapor deposition process. In this technique, 0.05M solution of WCl 6 in ethanol was drop-casted on SiO 2 /Si substrate to create an even distribution of the precursor, which was reduced and sulfurized at 750 °C in Ar atmosphere. We observed growth of triangular, star-shaped, as well as dendritic WS 2 crystals on the substrate. The crystal geometry evolves with the shape and size of the nuclei as observed from the dendritic structures. These results show that controlling the initial nucleation and growth process, large WS 2 single crystalline monolayer can be grown using the WCl 6 precursor. Our finding shows an easier and effective approach to grow WS 2 monolayer using tungsten halide solution-casting, rather than evaporating the precursor for gas phase reaction

Optimization of a Wcl6 CVD System to Coat UO2 Powder with Tungsten

Science.gov (United States)

Belancik, Grace A.; Barnes, Marvin W.; Mireles, Omar; Hickman, Robert

2015-01-01

In order to achieve deep space exploration via Nuclear Thermal Propulsion (NTP), Marshall Space Flight Center (MSFC) is developing W-UO2 CERMET fuel elements, with focus on fabrication, testing, and process optimization. A risk of fuel loss is present due to the CTE mismatch between tungsten and UO2 in the W-60vol%UO2 fuel element, leading to high thermal stresses. This fuel loss can be reduced by coating the spherical UO2 particles with tungsten via H2/WCl6 reduction in a fluidized bed CVD system. Since the latest incarnation of the inverted reactor was completed, various minor modifications to the system design were completed, including an inverted frit sublimer. In order to optimize the parameters to achieve the desired tungsten coating thickness, a number of trials using surrogate HfO2 powder were performed. The furnace temperature was varied between 930 C and 1000degC, and the sublimer temperature was varied between 140 C and 200 C. Each trial lasted 73-82 minutes, with one lasting 205 minutes. A total of 13 trials were performed over the course of three months, two of which were re-coatings of previous trials. The powder samples were weighed before and after coating to roughly determine mass gain, and Scanning Electron Microscope (SEM) data was also obtained. Initial mass results indicated that the rate of layer deposition was lower than desired in all of the trials. SEM confirmed that while a uniform coating was obtained, the average coating thickness was 9.1% of the goal. The two re-coating trials did increase the thickness of the tungsten layer, but only to an average 14.3% of the goal. Therefore, the number of CVD runs required to fully coat one batch of material with the current configuration is not feasible for high production rates. Therefore, the system will be modified to operate with a negative pressure environment. This will allow for better gas mixing and more efficient heating of the substrate material, yielding greater tungsten coating per trial.

Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

Energy Technology Data Exchange (ETDEWEB)

Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent (Belgium); Schaekers, Marc [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Blasco, Nicolas [Air Liquide Electronics US, L.P., 46401 Landing Parkway, Fremont, California 94538 (United States)

2013-03-18

Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

Thermal response of plasma sprayed tungsten coating to high heat flux

International Nuclear Information System (INIS)

Liu, X.; Yang, L.; Tamura, S.; Tokunaga, K.; Yoshida, N.; Noda, N.; Xu, Z.

2004-01-01

In order to investigate the thermal response of tungsten coating on carbon and copper substrates by vacuum plasma spray (VPS) or inert gas plasma spray (IPS), annealing and cyclic heat load experiments of these coatings were conducted. It is indicated that the multi-layered tungsten and rhenium interface of VPS-W/CFC failed to act as a diffusion barrier at elevated temperature and tungsten carbides were developed after 1 h incubation time when annealing temperature was higher than 1600 deg. C. IPS-W/Cu and W/C without an intermediate bonding layer were failed by the detachment of the tungsten coating at 900 and 1200 deg. C annealing for several hours, respectively. Cyclic heat load of electron beam with 35 MW/m 2 and 3-s pulse duration indicated that IPS-W/Cu samples failed with local detachment of the tungsten coating within 200 cycles and IPS-W/C showed local cracks by 300 cycles, but VPS-W/CFC withstood 1000 cycles without visible damages. However, crack creation and propagation in VPS-W/CFC were also observed under higher heat load

Hydrogen retention and erosion behaviour of tungsten-doped carbon films (a-C:W); Wasserstoffrueckhaltung und Erosionsverhalten von wolframdotierten Kohlenstofffilmen (a-C:W)

Energy Technology Data Exchange (ETDEWEB)

Sauter, Philipp Andre

2012-06-13

In this study tungsten-doped carbon films (a-C:W) were investigated with respect on hydrogen retention and erosion under deuterium (D) impact. a-C:W was used as model system for mixed layers, which will be deposited on the inner wall of the fusion reactor ITER. The erosion is lowered by the successive enrichment of tungsten at the surface and only mildly depends on the dopant concentration and the temperature. The hydrogen retention is determined by the diffusion of D into depth, which increases with temperature. The resulting successive accumulation of D in a-C:W is insensitive on enrichment for high fluences and in line with the accumulation of D in C.

Carbon nanotube forests growth using catalysts from atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Chen, Bingan; Zhang, Can; Esconjauregui, Santiago; Xie, Rongsi; Zhong, Guofang; Robertson, John [Department of Engineering, University of Cambridge, Cambridge CB3 0FA (United Kingdom); Bhardwaj, Sunil [Istituto Officina dei Materiali-CNR Laboratorio TASC, s.s. 14, km 163.4, I-34012 Trieste (Italy); Sincrotone Trieste S.C.p.A., s.s. 14, km 163.4, I-34149 Trieste (Italy); Cepek, Cinzia [Istituto Officina dei Materiali-CNR Laboratorio TASC, s.s. 14, km 163.4, I-34012 Trieste (Italy)

2014-04-14

We have grown carbon nanotubes using Fe and Ni catalyst films deposited by atomic layer deposition. Both metals lead to catalytically active nanoparticles for growing vertically aligned nanotube forests or carbon fibres, depending on the growth conditions and whether the substrate is alumina or silica. The resulting nanotubes have narrow diameter and wall number distributions that are as narrow as those grown from sputtered catalysts. The state of the catalyst is studied by in-situ and ex-situ X-ray photoemission spectroscopy. We demonstrate multi-directional nanotube growth on a porous alumina foam coated with Fe prepared by atomic layer deposition. This deposition technique can be useful for nanotube applications in microelectronics, filter technology, and energy storage.

Hydrogen retention properties of polycrystalline tungsten and helium irradiated tungsten

International Nuclear Information System (INIS)

Hino, T.; Koyama, K.; Yamauchi, Y.; Hirohata, Y.

1998-01-01

The hydrogen retention properties of a polycrystalline tungsten and tungsten irradiated by helium ions with an energy of 5 keV were examined by using an ECR ion irradiation apparatus and a technique of thermal desorption spectroscopy, TDS. The polycrystalline tungsten was irradiated at RT with energetic hydrogen ions, with a flux of 10 15 H cm -2 and an energy of 1.7 keV up to a fluence of 5 x 10 18 H cm -2 . Subsequently, the amount of retained hydrogen was measured by TDS. The heating temperature was increased from RT to 1000 C, and the heating rate was 50 C min -1 . Below 1000 C, two distinct hydrogen desorption peaks were observed at 200 C and 400 C. The retained amount of hydrogen was observed to be five times smaller than that of graphite, but the concentration in the implantation layer was comparable with that of graphite. Also, the polycrystalline tungsten was irradiated with 5 keV helium ions up to a fluence of 1.4 x 10 18 He cm -2 , and then re-irradiated with 1.7 keV hydrogen ions. The amount of retained hydrogen in this later experiment was close to the value in the case without prior helium ion irradiation. However, the amount of hydrogen which desorbed around the low temperature peak, 200 C, was largely enhanced. The desorption amount at 200 C saturated for the helium fluence of more than 5 x 10 17 He cm -2 . The present data shows that the trapping state of hydrogen is largely changed by the helium ion irradiation. Additionally, 5 keV helium ion irradiation was conducted on a sample pre-implanted with hydrogen ions to simulate a helium ion impact desorption of hydrogen retained in tungsten. The amount of the hydrogen was reduced as much as 50%. (orig.)

Investigation of vanadium and nitride alloys thin layers deposited by PVD

Directory of Open Access Journals (Sweden)

Nouveau C.

2012-06-01

Full Text Available In this work we present the technique of magnetron vapor deposition and the effect of several deposition parameters on the structural and morphological properties of prepared thin films. It was noted that the deposition time has an effect on the crystallinity, mechanical properties such as residual stress, roughness surface and the layer composition from target products. Studies were carried out on layers of vanadium (V and the nitride vanadium (VN.

Microstructure Changes of ZrO{sub 2}/W/Mo Coating Layers on Graphite after Heat Treatment at 2100 ℃

Energy Technology Data Exchange (ETDEWEB)

Ahn, Gyu Baek; Choe, Kyeong Hwan; Cho, Gue Serb [Korea Institute of Industrial Technology, Incheon (Korea, Republic of); Kim, Sang Sub [Inha University, Incheon (Korea, Republic of)

2016-08-15

A tungsten coating was deposited onto a graphite substrate using the atmospheric plasma spraying (APS) technique. In order to increase the adhesion strength between the metallic tungsten(W) and graphite, a molybdenum (Mo) interlayer was pre-deposited onto the graphite surface by utilizing the APS technique. Also, after deposition of a APS-W coating, a zirconia (ZrO{sub 2}) was deposited onto the W coating layer. For the APS process, argon and helium were used as the plasma-forming gases, and argon was used as the shield gas to protect the plasma from oxidation. After the APS coating process, heat exposure treatment was performed at 2100 ℃ for 360 h within a sapphire single crystal-growing furnace in order to evaluate the thermal stability of the coatings. After heat treatment, the ZrO{sub 2}/W/Mo coating layers were bound with the graphite without any peeling off. The microvickers hardness of the APS-W coating layer was increased after heat treatment due to the formation of carbides. Also, carbide phases such as Mo{sub 2}C, WC, ZrC and Mo{sub 3}C{sub 2} were identified by XRD diffraction and EDS analysis, by analyzing the depths below the coating surface. It was considered that the Mo interlayer served as a good buffer layer between the APS-W coating and the graphite after the heat exposure treatment because the lattice structure of the molybdenum carbide was similar to that of the graphite.

Atomic layer deposition of dielectrics for carbon-based electronics

Energy Technology Data Exchange (ETDEWEB)

Kim, J., E-mail: jiyoung.kim@utdallas.edu; Jandhyala, S.

2013-11-01

Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD), physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided. - Highlights: • We introduce various dielectric integration schemes for carbon-based devices. • Physical vapor deposition methods tend to degrade device performance. • Atomic layer deposition on pristine surfaces of graphene and nanotube is difficult. • We review different seeding techniques for atomic layer deposition of dielectrics. • Compare the performance of graphene top-gate devices with different dielectrics.

Atomic layer deposition of dielectrics for carbon-based electronics

International Nuclear Information System (INIS)

Kim, J.; Jandhyala, S.

2013-01-01

Carbon based nanomaterials like nanotubes and graphene have emerged as future generation electronic materials for device applications because of their interesting properties such as high-mobility and ability to carry high-current densities compared to conventional semiconductor materials like silicon. Therefore, there is a need to develop techniques to integrate robust gate dielectrics with high-quality interfaces for these materials in order to attain maximum performance. To date, a variety of methods including physical vapor deposition, atomic layer deposition (ALD), physical assembly among others have been employed in order to integrate dielectrics for carbon nanotube and graphene based field-effect transistors. Owing to the difficulty in wetting pristine surfaces of nanotubes and graphene, most of the ALD methods require a seeding technique involving non-covalent functionalization of their surfaces in order to nucleate dielectric growth while maintaining their intrinsic properties. A comprehensive review regarding the various dielectric integration schemes for emerging devices and their limitations with respect to ALD based methods along with a future outlook is provided. - Highlights: • We introduce various dielectric integration schemes for carbon-based devices. • Physical vapor deposition methods tend to degrade device performance. • Atomic layer deposition on pristine surfaces of graphene and nanotube is difficult. • We review different seeding techniques for atomic layer deposition of dielectrics. • Compare the performance of graphene top-gate devices with different dielectrics

Microscopic Characterization of Individual Submicron Bubbles during the Layer-by-Layer Deposition: Towards Creating Smart Agents

Directory of Open Access Journals (Sweden)

Riku Kato

2015-07-01

Full Text Available We investigated the individual properties of various polyion-coated bubbles with a mean diameter ranging from 300 to 500 nm. Dark field microscopy allows one to track the individual particles of the submicron bubbles (SBs encapsulated by the layer-by-layer (LbL deposition of cationic and anionic polyelectrolytes (PEs. Our focus is on the two-step charge reversals of PE-SB complexes: the first is a reversal from negatively charged bare SBs with no PEs added to positive SBs encapsulated by polycations (monolayer deposition, and the second is overcharging into negatively charged PE-SB complexes due to the subsequent addition of polyanions (double-layer deposition. The details of these phenomena have been clarified through the analysis of a number of trajectories of various PE-SB complexes that experience either Brownian motion or electrophoresis. The contrasted results obtained from the analysis were as follows: an amount in excess of the stoichiometric ratio of the cationic polymers was required for the first charge-reversal, whereas the stoichiometric addition of the polyanions lead to the electrical neutralization of the PE-SB complex particles. The recovery of the stoichiometry in the double-layer deposition paves the way for fabricating multi-layered SBs encapsulated solely with anionic and cationic PEs, which provides a simple protocol to create smart agents for either drug delivery or ultrasound contrast imaging.

Microscopic Characterization of Individual Submicron Bubbles during the Layer-by-Layer Deposition: Towards Creating Smart Agents

Science.gov (United States)

Kato, Riku; Frusawa, Hiroshi

2015-07-01

We investigated the individual properties of various polyion-coated bubbles with a mean diameter ranging from 300 to 500 nm. Dark field microscopy allows one to track the individual particles of the submicron bubbles (SBs) encapsulated by the layer-by-layer (LbL) deposition of cationic and anionic polyelectrolytes (PEs). Our focus is on the two-step charge reversals of PE-SB complexes: the first is a reversal from negatively charged bare SBs with no PEs added to positive SBs encapsulated by polycations (monolayer deposition), and the second is overcharging into negatively charged PE-SB complexes due to the subsequent addition of polyanions (double-layer deposition). The details of these phenomena have been clarified through the analysis of a number of trajectories of various PE-SB complexes that experience either Brownian motion or electrophoresis. The contrasted results obtained from the analysis were as follows: an amount in excess of the stoichiometric ratio of the cationic polymers was required for the first charge-reversal, whereas the stoichiometric addition of the polyanions lead to the electrical neutralization of the PE-SB complex particles. The recovery of the stoichiometry in the double-layer deposition paves the way for fabricating multi-layered SBs encapsulated solely with anionic and cationic PEs, which provides a simple protocol to create smart agents for either drug delivery or ultrasound contrast imaging.

Inorganic-Organic Coating via Molecular Layer Deposition Enables Long Life Sodium Metal Anode.

Science.gov (United States)

Zhao, Yang; Goncharova, Lyudmila V; Zhang, Qian; Kaghazchi, Payam; Sun, Qian; Lushington, Andrew; Wang, Biqiong; Li, Ruying; Sun, Xueliang

2017-09-13

Metallic Na anode is considered as a promising alternative candidate for Na ion batteries (NIBs) and Na metal batteries (NMBs) due to its high specific capacity, and low potential. However, the unstable solid electrolyte interphase layer caused by serious corrosion and reaction in electrolyte will lead to big challenges, including dendrite growth, low Coulombic efficiency and even safety issues. In this paper, we first demonstrate the inorganic-organic coating via advanced molecular layer deposition (alucone) as a protective layer for metallic Na anode. By protecting Na anode with controllable alucone layer, the dendrites and mossy Na formation have been effectively suppressed and the lifetime has been significantly improved. Moreover, the molecular layer deposition alucone coating shows better performances than the atomic layer deposition Al 2 O 3 coating. The novel design of molecular layer deposition protected Na metal anode may bring in new opportunities to the realization of the next-generation high energy-density NIBs and NMBs.

Deposition of Chitosan Layers on NiTi Shape Memory Alloy

Directory of Open Access Journals (Sweden)

Kowalski P.

2015-04-01

Full Text Available The NiTi shape memory alloys have been known from their application in medicine for implants as well as parts of medical devices. However, nickel belongs to the family of elements, which are toxic. Apart from the fact that nickel ions are bonded with titanium into intermetallic phase, their presence may cause allergy. In order to protect human body against release of nickel ions a surface of NiTi alloy can be modified with use of titanium nitrides, oxides or diamond-like layers. On the one hand the layers can play protective role but on the other hand they may influence shape memory behavior. Too stiff or too brittle layer can lead to limiting or completely blocking of the shape recovery. It was the reason to find more elastic covers for NiTi surface protection. This feature is characteristic for polymers, especially, biocompatible ones, which originate in nature. In the reported paper, the chitosan was applied as a deposited layer on surface of the NiTi shape memory alloy. Due to the fact that nature of shape memory effect is sensitive to thermo and/or mechanical treatments, the chitosan layer was deposited with use of electrophoresis carried out at room temperature. Various deposition parameters were checked and optimized. In result of that thin chitosan layer (0.45µm was received on the NiTi alloy surface. The obtained layers were characterized by means of chemical and phase composition, as well as surface quality. It was found that smooth, elastic surface without cracks and/or inclusions can be produced applying 10V and relatively short deposition time - 30 seconds.

Atomic-layer deposition of silicon nitride

CERN Document Server

Yokoyama, S; Ooba, K

1999-01-01

Atomic-layer deposition (ALD) of silicon nitride has been investigated by means of plasma ALD in which a NH sub 3 plasma is used, catalytic ALD in which NH sub 3 is dissociated by thermal catalytic reaction on a W filament, and temperature-controlled ALD in which only a thermal reaction on the substrate is employed. The NH sub 3 and the silicon source gases (SiH sub 2 Cl sub 2 or SiCl sub 4) were alternately supplied. For all these methods, the film thickness per cycle was saturated at a certain value for a wide range of deposition conditions. In the catalytic ALD, the selective deposition of silicon nitride on hydrogen-terminated Si was achieved, but, it was limited to only a thin (2SiO (evaporative).

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

International Nuclear Information System (INIS)

Tamura, Kazuyuki; Kuroki, Yuichiro; Yasui, Kanji; Suemitsu, Maki; Ito, Takashi; Endou, Tetsuro; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

2008-01-01

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH 3 ) and trimetylgallium (TMG) under low V/III source gas ratio (NH 3 /TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C 3 H 8 ). The AlN layer was deposited as a buffer layer using NH 3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer

New doped tungsten cathodes. Applications to power grid tubes

International Nuclear Information System (INIS)

Cachard, J. de; Cadoret, K; Martinez, L.; Veillet, D.; Millot, F.

2001-01-01

Thermionic emission behavior of tungsten/tungsten carbide modified with rare earth (La, Ce, Y) oxides is examined on account of suitability to deliver important current densities in a thermo-emissive set up and for long lifetime. Work functions of potential cathodes have been determined from Richardson plots for La 2 O 3 doped tungsten and for tungsten covered with variable compositions rare earth tungstates. The role of platinum layers covering the cathode was also examined. Given all cathodes containing mainly lanthanum oxides were good emitters, emphasis was put on service lifetime. Comparisons of lifetime in tungsten doped with rare earth oxides and with rare earth tungstates show that microstructure of the operating cathodes may play the major role in the research of very long lifetime cathodes. Based on these results, tests still running show lifetime compatible with power grid tubes applications. (author)

Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Mitchell, D.R.G. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)], E-mail: drm@ansto.gov.au; Triani, G.; Zhang, Z. [Institute of Materials Engineering, ANSTO, PMB 1, Menai, NSW 2234 (Australia)

2008-10-01

A two stage process (atomic layer deposition, followed by hydrothermal treatment) for producing crystalline titania thin films at temperatures compatible with polymeric substrates (< 130 deg. C) has been assessed. Titania thin films were deposited at 80 deg. C using atomic layer deposition. They were extremely flat, uniform and almost entirely amorphous. They also contained relatively high levels of residual Cl from the precursor. After hydrothermal treatment at 120 deg. C for 1 day, > 50% of the film had crystallized. Crystallization was complete after 10 days of hydrothermal treatment. Crystallization of the film resulted in the formation of coarse grained anatase. Residual Cl was completely expelled from the film upon crystallization. As a result of the amorphous to crystalline transformation voids formed at the crystallization front. Inward and lateral crystal growth resulted in voids being localized to the film/substrate interface and crystallite perimeters resulting in pinholing. Both these phenomena resulted in films with poor adhesion and film integrity was severely compromised.

Investigation of aperiodic W/C multi-layer mirror for X-ray optics

International Nuclear Information System (INIS)

Wang Zhanshan; Cheng Xinbin; Zhu Jingtao; Huang Qiushi; Zhang Zhong; Chen Lingyan

2011-01-01

Design, fabrication and characterization of aperiodic tungsten/carbon (W/C) multi-layer mirror were studied. W/C multi-layer was designed as a broad-angle reflective supermirror for Cu-Kα line (λ = 0.154 nm) in the grazing incident angular range (0.9-1.1 deg.) using simulated annealing algorithm. To deposit the W/C depth-graded multi-layer mirror accurately, we introduce an effective layer growth rate as a function of layer thickness. This method greatly improves the reflectivity curve compared to the conventional multi-layer mirror prepared with constant growth rate. The deposited multi-layer mirror exhibits an average reflectivity of 19% over the grazing incident angle range of 0.88-1.08 deg. which mainly coincides with the designed value. Furthermore, the physical mechanisms were discussed and the re-sputtering process of light-atom layers is accounted for the modification of layer thicknesses which leads to the effective growth rates. Using this calibration method, the aperiodic multi-layer mirrors can be better fabricated for X-ray optics.

Charge-density-wave instabilities expected in monophosphate tungsten bronzes

International Nuclear Information System (INIS)

Canadell, E.; Whangbo, M.

1991-01-01

On the basis of tight-binding band calculations, we examined the electronic structures of the tungsten oxide layers found in the monophosphate tungsten bronze (MPTB) phases. The Fermi surfaces of these MPTB phases consist of five well-nested one- and two-dimensional pieces. We calculated the nesting vectors of these Fermi surfaces and discussed the expected charge-density-wave instabilities

Atomic layer deposition of GaN at low temperatures

Energy Technology Data Exchange (ETDEWEB)

Ozgit, Cagla; Donmez, Inci; Alevli, Mustafa; Biyikli, Necmi [UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara (Turkey)

2012-01-15

The authors report on the self-limiting growth of GaN thin films at low temperatures. Films were deposited on Si substrates by plasma-enhanced atomic layer deposition using trimethylgallium (TMG) and ammonia (NH{sub 3}) as the group-III and -V precursors, respectively. GaN deposition rate saturated at 185 deg. C for NH{sub 3} doses starting from 90 s. Atomic layer deposition temperature window was observed from 185 to {approx}385 deg. C. Deposition rate, which is constant at {approx}0.51 A/cycle within the temperature range of 250 - 350 deg. C, increased slightly as the temperature decreased to 185 deg. C. In the bulk film, concentrations of Ga, N, and O were constant at {approx}36.6, {approx}43.9, and {approx}19.5 at. %, respectively. C was detected only at the surface and no C impurities were found in the bulk film. High oxygen concentration in films was attributed to the oxygen impurities present in group-V precursor. High-resolution transmission electron microscopy studies revealed a microstructure consisting of small crystallites dispersed in an amorphous matrix.

Soft X-ray radiation parameters of nested tungsten wire array

International Nuclear Information System (INIS)

Ning Jiamin; Jiang Shilun; Xu Rongkun; Xu Zeping; Li Zhenghong; Yang Jianlun

2011-01-01

Implosions with nested tungsten wire array were performed at the Angara-5-1 facility in Russian Research Centre. The experimental results of nested tungsten wire array are compared with those of single array. Radiation parameters of nested array are discussed based on four different dynamic models. When the implosions of outer and inner wire arrays are synchronized,the relatively uniform distribution of inner layer plasma will improve the uniformity of outer layer plasma. As compared with single array, nested array has an increase of 32% in X-ray radiation power. (authors)

Atomic layer deposition of nanostructured materials

CERN Document Server

Pinna, Nicola

2012-01-01

Atomic layer deposition, formerly called atomic layer epitaxy, was developed in the 1970s to meet the needs of producing high-quality, large-area fl at displays with perfect structure and process controllability. Nowadays, creating nanomaterials and producing nanostructures with structural perfection is an important goal for many applications in nanotechnology. As ALD is one of the important techniques which offers good control over the surface structures created, it is more and more in the focus of scientists. The book is structured in such a way to fi t both the need of the expert reader (du

Granular nanocrystalline zirconia electrolyte layers deposited on porous SOFC cathode substrates

International Nuclear Information System (INIS)

Seydel, Johannes; Becker, Michael; Ivers-Tiffee, Ellen; Hahn, Horst

2009-01-01

Thin granular yttria-stabilized zirconia (YSZ) electrolyte layers were prepared by chemical vapor synthesis and deposition (CVD/CVS) on a porous substoichiometric lanthanum-strontium-manganite (ULSM) solid oxide fuel cell cathode substrate. The substrate porosity was optimized with a screen printed fine porous buffer layer. Structural analysis by scanning electron microscopy showed a homogeneous, granular nanocrystalline layer with a microstructure that was controlled via reactor settings. The CVD/CVS gas-phase process enabled the deposition of crack-free granular YSZ films on porous ULSM substrates. The electrolyte layers characterized with impedance spectroscopy exhibited enhanced grain boundary conductivity.

To what extent can intracrater layered deposits that lack clear sedimentary textures be used to infer depositional environments?

Science.gov (United States)

Cadieux, Sarah B.; Kah, Linda C.

2015-03-01

Craters within Arabia Terra, Mars, contain hundreds of meters of layered strata showing systematic alternation between slope- and cliff-forming units, suggesting either rhythmic deposition of distinct lithologies or similar lithologies that experienced differential cementation. On Earth, rhythmically deposited strata can be examined in terms of stratal packaging, wherein the interplay of tectonics, sediment deposition, and base level (i.e., the position above which sediment accumulation is expected to be temporary) result in changes in the amount of space available for sediment accumulation. These predictable patterns of sediment deposition can be used to infer changes in basin accommodation regardless of the mechanism of deposition (e.g. fluvial, lacustrine, or aeolian). Here, we analyze sedimentary deposits from three craters (Becquerel Crater, Danielson Crater, Crater A) in Arabia Terra. Each crater contains layered deposits that are clearly observed in orbital images. Although orbital images are insufficient to specifically determine the origin of sedimentary deposits, depositional couplets can be interpreted in terms of potential accommodation space available for deposition, and changes in the distribution of couplet thickness through stratigraphy can be interpreted in terms of changing base level and the production of new accommodation space. Differences in stratal packaging in these three craters suggest varying relationships between sedimentary influx, sedimentary base level, and concomitant changes in accommodation space. Previous groundwater upwelling models hypothesize that layered sedimentary deposits were deposited under warm climate conditions of early Mars. Here, we use observed stacking patterns to propose a model for deposition under cold climate conditions, wherein episodic melting of ground ice could raise local base level, stabilize sediment deposition, and result in differential cementation of accumulated strata. Such analysis demonstrates that

Effect of bond coat and preheat on the microstructure, hardness, and porosity of flame sprayed tungsten carbide coatings

Science.gov (United States)

Winarto, Winarto; Sofyan, Nofrijon; Rooscote, Didi

2017-06-01

Thermally sprayed coatings are used to improve the surface properties of tool steel materials. Bond coatings are commonly used as intermediate layers deposited on steel substrates (i.e. H13 tool steel) before the top coat is applied in order to enhance a number of critical performance criteria including adhesion of a barrier coating, limiting atomic migration of the base metal, and corrosion resistance. This paper presents the experimental results regarding the effect of nickel bond coat and preheats temperatures (i.e. 200°C, 300°C and 400°C) on microstructure, hardness, and porosity of tungsten carbide coatings sprayed by flame thermal coating. Micro-hardness, porosity and microstructure of tungsten carbide coatings are evaluated by using micro-hardness testing, optical microscopy, scanning electron microscopy, and X-ray diffraction. The results show that nickel bond coatings reduce the susceptibility of micro crack formation at the bonding area interfaces. The percentage of porosity level on the tungsten carbide coatings with nickel bond coat decreases from 5.36 % to 2.78% with the increase of preheat temperature of the steel substrate of H13 from 200°C to 400°C. The optimum hardness of tungsten carbide coatings is 1717 HVN in average resulted from the preheat temperature of 300°C.

An effective approach to synthesize monolayer tungsten disulphide crystals using tungsten halide precursor

Energy Technology Data Exchange (ETDEWEB)

Thangaraja, Amutha; Shinde, Sachin M.; Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

2016-02-01

The synthesis of large-area monolayer tungsten disulphide (WS{sub 2}) single crystal is critical for realistic application in electronic and optical devices. Here, we demonstrate an effective approach to synthesize monolayer WS{sub 2} crystals using tungsten hexachloride (WCl{sub 6}) as a solid precursor in atmospheric chemical vapor deposition process. In this technique, 0.05M solution of WCl{sub 6} in ethanol was drop-casted on SiO{sub 2}/Si substrate to create an even distribution of the precursor, which was reduced and sulfurized at 750 °C in Ar atmosphere. We observed growth of triangular, star-shaped, as well as dendritic WS{sub 2} crystals on the substrate. The crystal geometry evolves with the shape and size of the nuclei as observed from the dendritic structures. These results show that controlling the initial nucleation and growth process, large WS{sub 2} single crystalline monolayer can be grown using the WCl{sub 6} precursor. Our finding shows an easier and effective approach to grow WS{sub 2} monolayer using tungsten halide solution-casting, rather than evaporating the precursor for gas phase reaction.

Characterization of tungsten silicides formed by rapid thermal annealing

International Nuclear Information System (INIS)

Siegal, M.; Santiago, J.J.; VanDerSpiegel, J.

1986-01-01

Tungsten silicide samples were formed by sputter depositing 80 nm W metal onto (100) oriented, 5 ohm-cm Si wafers. After deposition, the samples were fast radiatively processed in an RTA system using quartz-halogen tungsten lamps as radiation sources for time intervals ranging from 20 to 60s under high vacuum. Films processed at 22-25 W/cm 2 radiation with the film side of the samples oriented away from the lamps result in films which are metallic or cloudy in color, and have mixed composition as evidenced by x-ray diffraction (W, W 5 Si 3 and WSi 2 ). Films processed with the film side oriented toward the lamps show the occurrence of a phase transformation clearly nucleated at the film edge

Energy-enhanced atomic layer deposition : offering more processing freedom

NARCIS (Netherlands)

Potts, S.E.; Kessels, W.M.M.

2013-01-01

Atomic layer deposition (ALD) is a popular deposition technique comprising two or more sequential, self-limiting surface reactions, which make up an ALD cycle. Energy-enhanced ALD is an evolution of traditional thermal ALD methods, whereby energy is supplied to a gas in situ in order to convert a

Spatial atmospheric atomic layer deposition of alxzn1-xo

NARCIS (Netherlands)

Illiberi, A.; Scherpenborg, R.; Wu, Y.; Roozeboom, F.; Poodt, P.

2013-01-01

The possibility of growing multicomponent oxides by spatial atmospheric atomic layer deposition has been investigated. To this end, Al xZn1-xO films have been deposited using diethyl zinc (DEZ), trimethyl aluminum (TMA), and water as Zn, Al, and O precursors, respectively. When the metal precursors

Area-selective atomic layer deposition of platinum using photosensitive polyimide

NARCIS (Netherlands)

Vervuurt, R.H.J.; Sharma, A.; Jiao, Y.; Kessels, W.M.M.; Bol, A.A.

2016-01-01

Area-selective atomic layer deposition (AS-ALD) of platinum (Pt) was studied using photosensitive polyimide as a masking layer. The polyimide films were prepared by spin-coating and patterned using photolithography. AS-ALD of Pt using poly(methyl-methacrylate) (PMMA) masking layers was used as a

Atomic layer deposition of a MoS₂ film.

Science.gov (United States)

Tan, Lee Kheng; Liu, Bo; Teng, Jing Hua; Guo, Shifeng; Low, Hong Yee; Tan, Hui Ru; Chong, Christy Yuen Tung; Yang, Ren Bin; Loh, Kian Ping

2014-09-21

A mono- to multilayer thick MoS₂ film has been grown by using the atomic layer deposition (ALD) technique at 300 °C on a sapphire wafer. ALD provides precise control of the MoS₂ film thickness due to pulsed introduction of the reactants and self-limiting reactions of MoCl₅ and H₂S. A post-deposition annealing of the ALD-deposited monolayer film improves the crystallinity of the film, which is evident from the presence of triangle-shaped crystals that exhibit strong photoluminescence in the visible range.

Comparative Investigation of Tungsten Fibre Nets Reinforced Tungsten Composite Fabricated by Three Different Methods

Directory of Open Access Journals (Sweden)

Linhui Zhang

2017-07-01

Full Text Available Tungsten fibre nets reinforced tungsten composites (Wf/W containing four net layers were fabricated by spark plasma sintering (SPS, hot pressing (HP and cold rolling after HP (HPCR, with the weight fraction of fibres being 17.4%, 10.5% and 10.5%, respectively. The relative density of the HPCRed samples is the highest (99.8% while that of the HPed composites is the lowest (95.1%. Optical and scanning electron microscopy and electron back scattering diffraction were exploited to characterize the microstructure, while tensile and hardness tests were used to evaluate the mechanical properties of the samples. It was found that partial recrystallization of fibres occurred after the sintering at 1800 °C. The SPSed and HPed Wf/W composites begin to exhibit plastic deformation at 600 °C with tensile strength (TS of 536 and 425 MPa and total elongation at break (TE of 11.6% and 23.0%, respectively, while the HPCRed Wf/W composites exhibit plastic deformation at around 400 °C. The TS and TE of the HPCRed Wf/W composites at 400 °C are 784 MPa and 8.4%, respectively. The enhanced mechanical performance of the Wf/W composites over the pure tungsten can be attributed to the necking, cracking, and debonding of the tungsten fibres.

Selective deposition contact patterning using atomic layer deposition for the fabrication of crystalline silicon solar cells

International Nuclear Information System (INIS)

Cho, Young Joon; Shin, Woong-Chul; Chang, Hyo Sik

2014-01-01

Selective deposition contact (SDC) patterning was applied to fabricate the rear side passivation of crystalline silicon (Si) solar cells. By this method, using screen printing for contact patterning and atomic layer deposition for the passivation of Si solar cells with Al 2 O 3 , we produced local contacts without photolithography or any laser-based processes. Passivated emitter and rear-contact solar cells passivated with ozone-based Al 2 O 3 showed, for the SDC process, an up-to-0.7% absolute conversion-efficiency improvement. The results of this experiment indicate that the proposed method is feasible for conversion-efficiency improvement of industrial crystalline Si solar cells. - Highlights: • We propose a local contact formation process. • Local contact forms a screen print and an atomic layer deposited-Al 2 O 3 film. • Ozone-based Al 2 O 3 thin film was selectively deposited onto patterned silicon. • Selective deposition contact patterning method can increase cell-efficiency by 0.7%

Improved Efficiency of Polymer Solar Cells by means of Coating Hole Transporting Layer as Double Layer Deposition

Science.gov (United States)

Chonsut, T.; Kayunkid, N.; Rahong, S.; Rangkasikorn, A.; Wirunchit, S.; Kaewprajak, A.; Kumnorkaew, P.; Nukeaw, J.

2017-09-01

Polymer solar cells is one of the promising technologies that gain tremendous attentions in the field of renewable energy. Optimization of thickness for each layer is an important factor determining the efficiency of the solar cells. In this work, the optimum thickness of Poly(3,4-ethylenedioxythione): poly(styrenesulfonate) (PEDOT:PSS), a famous polymer widely used as hole transporting layer in polymer solar cells, is determined through the analyzing of device’s photovoltaic parameters, e.g. short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF) as well as power conversion efficiency (PCE). The solar cells were prepared with multilayer of ITO/PEDOT:PSS/PCDTBT:PC70BM/TiOx/Al by rapid convective deposition. In such preparation technique, the thickness of the thin film is controlled by the deposition speed. The faster deposition speed is used, the thicker film is obtained. Furthermore, double layer deposition of PEDOT:PSS was introduced as an approach to improve solar cell efficiency. The results obviously reveal that, with the increase of PEDOT:PSS thickness, the increments of Jsc and FF play the important role to improve PCE from 3.21% to 4.03%. Interestingly, using double layer deposition of PEDOT:PSS shows the ability to enhance the performance of the solar cells to 6.12% under simulated AM 1.5G illumination of 100 mW/cm2.

Textured strontium titanate layers on platinum by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Blomberg, T., E-mail: tom.blomberg@asm.com [ASM Microchemistry Ltd., Vaeinoe Auerin katu 12 A, 00560 Helsinki (Finland); Anttila, J.; Haukka, S.; Tuominen, M. [ASM Microchemistry Ltd., Vaeinoe Auerin katu 12 A, 00560 Helsinki (Finland); Lukosius, M.; Wenger, Ch. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Saukkonen, T. [Aalto University, Puumiehenkuja 3, 02150 Espoo (Finland)

2012-08-31

Formation of textured strontium titanate (STO) layers with large lateral grain size (0.2-1 {mu}m) and low X-ray reflectivity roughness ({approx} 1.36 nm) on Pt electrodes by industry proven atomic layer deposition (ALD) method is demonstrated. Sr(t-Bu{sub 3}Cp){sub 2}, Ti(OMe){sub 4} and O{sub 3} precursors at 250 Degree-Sign C were used to deposit Sr rich STO on Pt/Ti/SiO{sub 2}/Si Empty-Set 200 mm substrates. After crystallization post deposition annealing at 600 Degree-Sign C in air, most of the STO grains showed a preferential orientation of the {l_brace}001{r_brace} plane parallel to the substrate surface, although other orientations were also present. Cross sectional and plan view transmission electron microscopy and electron diffraction analysis revealed more than an order of magnitude larger lateral grain sizes for the STO compared to the underlying multicrystalline {l_brace}111{r_brace} oriented platinum electrode. The combination of platinum bottom electrodes with ALD STO(O{sub 3}) shows a promising path towards the formation of single oriented STO film. - Highlights: Black-Right-Pointing-Pointer Amorphous strontium titanate (STO) on platinum formed a textured film after annealing. Black-Right-Pointing-Pointer Single crystal domains in 60 nm STO film were 0.2-1 {mu}m wide. Black-Right-Pointing-Pointer Most STO grains were {l_brace}001{r_brace} oriented.

Synthesis of Tungsten Diselenide Nanoparticles by Chemical Vapor Condensation Method

Directory of Open Access Journals (Sweden)

Oleg V. Tolochko

2015-09-01

Full Text Available Crystalline tungsten diselenide (WSe2 nanoparticles have been synthesized by a gas phase reaction using tungsten hexacarbonyl and elemental selenium as precursors. The WSe2 nanoparticle morphology varies from the spherical shape to flake-like layered structures. Mean size in smaller dimension are less than 5 nm and the number of layers decreased linearly with decreasing of reaction time and concentration of carbonyl in the gas phase. The mean value of interlayer distance in <0001> direction is comparable with the microscopic values. The selenium-to-tungsten atomic ratios of 2.07, 2.19 and 2.19 were determined respectively, approach to the stoichiometric ratio of 2:1. Main impurities are oxygen and carbon and strongly interrelated with carbonyl concentration in the gas phase.DOI: http://dx.doi.org/10.5755/j01.ms.21.3.7356

Compact Layers of Hybrid Halide Perovskites Fabricated via the Aerosol Deposition Process-Uncoupling Material Synthesis and Layer Formation.

Science.gov (United States)

Panzer, Fabian; Hanft, Dominik; Gujar, Tanaji P; Kahle, Frank-Julian; Thelakkat, Mukundan; Köhler, Anna; Moos, Ralf

2016-04-08

We present the successful fabrication of CH₃NH₃PbI₃ perovskite layers by the aerosol deposition method (ADM). The layers show high structural purity and compactness, thus making them suitable for application in perovskite-based optoelectronic devices. By using the aerosol deposition method we are able to decouple material synthesis from layer processing. Our results therefore allow for enhanced and easy control over the fabrication of perovskite-based devices, further paving the way for their commercialization.

Atomic diffusion induced degradation in bimetallic layer coated cemented tungsten carbide

International Nuclear Information System (INIS)

Peng, Zirong; Rohwerder, Michael; Choi, Pyuck-Pa; Gault, Baptiste; Meiners, Thorsten; Friedrichs, Marcel; Kreilkamp, Holger; Klocke, Fritz; Raabe, Dierk

2017-01-01

Highlights: • We study the temporal degradation of PtIr/Cr/WC and PtIr/Ni/WC systems. • Short cut diffusion, segregation, oxidation and interdiffusion reactions occurred. • Outward diffusion of Cr (Ni) via PtIr grain boundaries triggered the degradation. • The microstructure of the PtIr layer controlled the systems stability. • We propose an atomic diffusion induced degradation mechanism. - Abstract: We investigated the temporal degradation of glass moulding dies, made of cemented tungsten carbide coated with PtIr on an adhesive Cr or Ni interlayer, by electron microscopy and atom probe tomography. During the exposure treatments at 630 °C under an oxygen partial pressure of 1.12 × 10"−"2"3 bar, Cr (Ni) was found to diffuse outwards via grain boundaries in the PtIr, altering the surface morphology. Upon dissolution of the interlayer, the WC substrate also started degrading. Extensive interdiffusion processes involving PtIr, Cr (Ni) and WC took place, leading to the formation of intermetallic phases and voids, deteriorating the adhesion of the coating.

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

Science.gov (United States)

Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

2016-12-01

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

Tungsten erosion and redeposition in the all-tungsten divertor of ASDEX Upgrade

Energy Technology Data Exchange (ETDEWEB)

Mayer, M; Krieger, K; Matern, G; Neu, R; Rasinski, M; Rohde, V; Sugiyama, K; Wiltner, A [Max-Planck-Institut fuer Plasmaphysik, EURATOM Association, Boltzmannstrasse 2, 85748 Garching (Germany); Andrzejczuk, M; Fortuna-Zalesna, E; Kurzydlowski, K J; Zielinski, W [Faculty of Materials Science and Engineering, Warsaw University of Technology, Association EURATOM-IPPLM, 02-507 Warsaw (Poland); Hakola, A; Koivuranta, S; Likonen, J [VTT Materials for Power Engineering, EURATOM Association, PO Box 1000, FI-02044 VTT (Finland); Ramos, G [CICATA-Qro, Instituto Politecnico Nacional, Queretaro (Mexico); Dux, R, E-mail: matej.mayer@ipp.mpg.de

2009-12-15

Net erosion and deposition of tungsten (W) in the ASDEX Upgrade divertor were determined after the 2007 campaign by using thin W marker stripes. ASDEX Upgrade had full-W plasma-facing components during this campaign. The inner divertor and the roof baffle were net W deposition areas with a maximum deposition of about 1x10{sup 18} W-atoms cm{sup -2} in the private flux region below the inner strike point. Net erosion of W was observed in the whole outer divertor, with the largest erosion close to the outer strike point. Only a small fraction of the W eroded in the main chamber and in the outer divertor was found in redeposits in the inner divertor, while a large fraction was either redeposited at unidentified places in the main chamber or has formed dust.

Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

Energy Technology Data Exchange (ETDEWEB)

Tamura, Kazuyuki [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)], E-mail: kazuyuki@stn.nagaokaut.ac.jp; Kuroki, Yuichiro; Yasui, Kanji [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endou, Tetsuro [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

2008-01-15

GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH{sub 3}) and trimetylgallium (TMG) under low V/III source gas ratio (NH{sub 3}/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C{sub 3}H{sub 8}). The AlN layer was deposited as a buffer layer using NH{sub 3} and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH{sub x} radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

Compact Layers of Hybrid Halide Perovskites Fabricated via the Aerosol Deposition Process—Uncoupling Material Synthesis and Layer Formation

Directory of Open Access Journals (Sweden)

Fabian Panzer

2016-04-01

Full Text Available We present the successful fabrication of CH3NH3PbI3 perovskite layers by the aerosol deposition method (ADM. The layers show high structural purity and compactness, thus making them suitable for application in perovskite-based optoelectronic devices. By using the aerosol deposition method we are able to decouple material synthesis from layer processing. Our results therefore allow for enhanced and easy control over the fabrication of perovskite-based devices, further paving the way for their commercialization.

Consolidation of tungsten disilicide by plasma spraying

Czech Academy of Sciences Publication Activity Database

Brožek, Vlastimil; Ctibor, Pavel; Matějíček, Jiří; Rohan, Pavel; Janča, J.

2007-01-01

Roč. 52, č. 3 (2007), s. 311-320 ISSN 0001-7043 R&D Projects: GA ČR(CZ) GA104/05/0540 Institutional research plan: CEZ:AV0Z20430508 Keywords : Water stabilized plasma * tungsten disilicide * plasma deposition * thermal spray coatings Subject RIV: JJ - Other Materials

Layer-by-layer deposition of superconducting Sr-Ca-Cu-O films by the spray pyrolysis technique

International Nuclear Information System (INIS)

Pawar, S.H.; Pawaskar, P.N.; Ubale, M.J.; Kulkarni, S.B.

1995-01-01

Layer-by-layer deposition of Sr-Ca-Cu-O films has been carried out using the spray pyrolysis technique. Reagent-grade nitrates of strontium, calcium and copper were used to prepare starting solutions for spray pyrolysis. A two-step procedure was used for every layer of the constituents in the sequence Sr-Cu-Ca-Cu-Sr: first, deposition onto silver substrate at 350 C, then firing at T≥450 C, both at atmospheric pressure. The films were 2-3 μm thick and showed adequate adhesion to the substrate. The films were then characterised by studying their electron micrographs, X-ray diffraction patterns and electrical resistivity. The films showed superconductivity below 104 K. ((orig.))

Electron molecular beam epitaxy: Layer-by-layer growth of complex oxides via pulsed electron-beam deposition

International Nuclear Information System (INIS)

Comes, Ryan; Liu Hongxue; Lu Jiwei; Gu, Man; Khokhlov, Mikhail; Wolf, Stuart A.

2013-01-01

Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed.

Suppression of cavitation in melted tungsten by doping with lanthanum oxide

International Nuclear Information System (INIS)

Yuan, Y.; Lu, G.H.; Xu, B.; Fu, B.Q.; Xu, H.Y.; Li, C.; Jia, Y.Z.; Qu, S.L.; Liu, W.; Greuner, H.; Böswirth, B.; Luo, G.-N.

2014-01-01

Melting and boiling behaviour of pure tungsten and 1 wt% lanthanum-oxide-doped tungsten (WL10) are investigated, focusing on the material selection with respect to material loss induced by cavitation. Melting experiments under high heat loads are carried out in the high heat flux facility GLADIS. Pulsed hydrogen neutral beams with heat flux of 10 and 23 MW m −2 are applied onto the adiabatically loaded samples for intense surface melting. Melt layer of the two tungsten grades exhibit different microstructure characteristics. Substantive voids owing to cavitation in the liquid phase are observed in pure W and lead to porous resolidified material. However, little cavitation bubbles can be found in the dense resolidified layer of WL10. In order to find out the gaseous sources, vapour collection is performed and the components are subsequently detected. Based on the observations and analyses, the microstructure evolutions corresponding to melting and vapourization behaviour of the two tungsten grades are tentatively described, and furthermore, the underlying mechanisms of cavitation in pure W and its suppression in WL10 are discussed. (paper)

The relationship between structural evolution and electrical percolation of the initial stages of tungsten chemical vapor deposition on polycrystalline TiN

International Nuclear Information System (INIS)

Rozenblat, A.; Haimson, S.; Shacham-Diamand, Y.; Horvitz, D.

2012-01-01

This paper presents experimental results and a geometric model of the evolution of sheet resistance and surface morphology during the transition from nucleation to percolation of tungsten chemical vapor deposition over ultrathin polycrystalline titanium nitride (TiN). We observed two mechanisms of reduction in sheet resistance. At deposition temperatures higher than 310 deg. C, percolation effect is formed at ∼35% of surface coverage, θ, and characterized with a sharp drop in resistance. At temperature below 310 deg. C, a reduction in resistance occurs in two steps. The first step occurs when θ = 35% and the second step at θ = 85%. We suggest a geometric model in which the electrical percolation pass is modulated by the thickness threshold of the islands at the instant of collision.

Characterization of graded iron / tungsten layers for the first wall of fusion reactors

International Nuclear Information System (INIS)

Heuer, Simon

2017-01-01

The nuclear fusion has great potential to enable a CO 2 -neutral energy supply of future generations. The technical utilization of this energy source has hitherto been a challenge. In particular, high thermal loads and neutron-induced damage lead to extreme demands on the choice of materials for plasma-facing components (PFCs). These are therefore, as currently understood, made from a tungsten protective layer which is joined to a structure of low activation ferritic-martensitic (LAFM) steel. Due to the discrete transition of material properties at the LAFM-W joining zone as well as thermal loads, macroscopic stresses and plastic strains arise here. A feasible way to reduce this is to implement an intermediate layer with graded LAFM / W ratio, a so-called functional graded material (FGM). In the present work, macro-stresses and strains in the first wall of the fusion reactor DEMO are examined and evaluated by means of a finite element simulation. In this framework model components with and without graded interlayer are taken into account and the advantage of a FGM is emphasized. Parameter studies serve as a constructive guideline for the structural implementation of FGMs and components of the first wall. In addition, the feasibility of four methods (magnetron sputtering, liquid phase infiltration, modified atmospheric plasma spraying and electrodischarge sintering) with respect to the fabrication of FGMs is being studied. The resulting layers are microstructurally, thermo-physically and mechanically examined in detail. Based on this characterization and the finite element simulation, their suitability as a graded layer in the first wall of DEMO is evaluated and finally compared with alternative joining systems that are currently being tested in the research environment. [de

Atmospheric spatial atomic layer deposition of Zn(O,S) buffer layer for Cu(In,Ga)Se2 solar cells

NARCIS (Netherlands)

Frijters, C.H.; Poodt, P.; Illeberi, A.

2016-01-01

Zinc oxysulfide has been grown by spatial atomic layer deposition (S-ALD) and successfully applied as buffer layer in Cu(In, Ga)Se2 (CIGS) solar cells. S-ALD combines high deposition rates (up to nm/s) with the advantages of conventional ALD, i.e. excellent control of film composition and superior

Emission property of scandia and Re doped tungsten matrix dispenser cathode

International Nuclear Information System (INIS)

Wang Jinshu; Wang Yanchun; Liu Wei; Li Lili; Wang Yiman; Zhou Meiling

2008-01-01

Scandia and rhenium doped tungsten powders have been prepared by solid-liquid doping combined with two-step reduction method. The experimental results show that scandia distributes evenly in the doped tungsten powder. Moreover, the addition of scandia and rhenium could decrease the particle size of tungsten. By using this kind of powder, scandia and rhenium doped tungsten matrix with sub-micrometer sized tungsten grains and a uniform distribution of Sc 2 O 3 together with high pore density has been obtained. The emission property result shows that high space charge limited current density of more than 30 A/cm 2 at 850 deg. C has been obtained for this cathode. This excellent emission capability results from an active layer uniformly covering the sub-micron structure framework of the cathodes

Tritium recovery from co-deposited layers using 193-nm laser

Science.gov (United States)

Shu, W. M.; Kawakubo, Y.; Nishi, M. F.

Recovery of tritium from co-deposited layers formed in deuterium-tritium plasma operations of the TFTR (Tokamak Fusion Test Reactor) was investigated by the use of an ArF excimer laser operating at the wavelength of 193 nm. At the laser energy density of 0.1 J/cm2, a transient spike of the tritium-release rate was observed at initial irradiation. Hydrogen isotopes were released in the form of hydrogen-isotope molecules during the laser irradiation in vacuum, suggesting that tritium can be recovered readily from the released gases. In a second experiment, hydrogen (tritium) recovery from the co-deposited layers on JT-60 tiles that had experienced hydrogen-plasma operations was investigated by laser ablation with a focused beam of the excimer laser. The removal rate of the co-deposited layers was quite low when the laser energy density was smaller than the ablation threshold (1.0 J/cm2), but reached 1.1 μm/pulse at the laser energy density of 7.6 J/cm2. The effective absorption coefficient in the co-deposited layers at the laser wavelength was determined to be 1.9 μm-1. The temperature of the surface during the irradiation at the laser energy density of 0.5 J/cm2 was measured on the basis of Planck's law of radiation, and the maximum temperature during the irradiation decreased from 3570 K at the initial irradiation to 2550 K at the 1000th pulse of the irradiation.

Nanoparticle layer deposition for highly controlled multilayer formation based on high-coverage monolayers of nanoparticles

International Nuclear Information System (INIS)

Liu, Yue; Williams, Mackenzie G.; Miller, Timothy J.; Teplyakov, Andrew V.

2016-01-01

This paper establishes a strategy for chemical deposition of functionalized nanoparticles onto solid substrates in a layer-by-layer process based on self-limiting surface chemical reactions leading to complete monolayer formation within the multilayer system without any additional intermediate layers — nanoparticle layer deposition (NPLD). This approach is fundamentally different from previously established traditional layer-by-layer deposition techniques and is conceptually more similar to well-known atomic and molecular layer deposition processes. The NPLD approach uses efficient chemical functionalization of the solid substrate material and complementary functionalization of nanoparticles to produce a nearly 100% coverage of these nanoparticles with the use of “click chemistry”. Following this initial deposition, a second complete monolayer of nanoparticles is deposited using a copper-catalyzed “click reaction” with the azide-terminated silica nanoparticles of a different size. This layer-by-layer growth is demonstrated to produce stable covalently-bound multilayers of nearly perfect structure over macroscopic solid substrates. The formation of stable covalent bonds is confirmed spectroscopically and the stability of the multilayers produced is tested by sonication in a variety of common solvents. The 1-, 2- and 3-layer structures are interrogated by electron microscopy and atomic force microscopy and the thickness of the multilayers formed is fully consistent with that expected for highly efficient monolayer formation with each cycle of growth. This approach can be extended to include a variety of materials deposited in a predesigned sequence on different substrates with a highly conformal filling. - Highlights: • We investigate the formation of high-coverage monolayers of nanoparticles. • We use “click chemistry” to form these monolayers. • We form multiple layers based on the same strategy. • We confirm the formation of covalent bonds

Simulating Porous Magnetite Layer Deposited on Alloy 690TT Steam Generator Tubes.

Science.gov (United States)

Jeon, Soon-Hyeok; Son, Yeong-Ho; Choi, Won-Ik; Song, Geun Dong; Hur, Do Haeng

2018-01-02

In nuclear power plants, the main corrosion product that is deposited on the outside of steam generator tubes is porous magnetite. The objective of this study was to simulate porous magnetite that is deposited on thermally treated (TT) Alloy 690 steam generator tubes. A magnetite layer was electrodeposited on an Alloy 690TT substrate in an Fe(III)-triethanolamine solution. After electrodeposition, the dense magnetite layer was immersed to simulate porous magnetite deposits in alkaline solution for 50 days at room temperature. The dense morphology of the magnetite layer was changed to a porous structure by reductive dissolution reaction. The simulated porous magnetite layer was compared with flakes of steam generator tubes, which were collected from the secondary water system of a real nuclear power plant during sludge lancing. Possible nuclear research applications using simulated porous magnetite specimens are also proposed.

The effect of location on the microstructure and mechanical properties of titanium aluminides produced by additive layer manufacturing using in-situ alloying and gas tungsten arc welding

Energy Technology Data Exchange (ETDEWEB)

Ma, Yan; Cuiuri, Dominic; Hoye, Nicholas; Li, Huijun; Pan, Zengxi, E-mail: zengxi@uow.edu.au

2015-04-17

An innovative and low cost additive layer manufacturing (ALM) process is used to produce γ-TiAl based alloy wall components. Gas tungsten arc welding (GTAW) provides the heat source for this new approach, combined with in-situ alloying through separate feeding of commercially pure Ti and Al wires into the weld pool. This paper investigates the morphology, microstructure and mechanical properties of the additively manufactured TiAl material, and how these are affected by the location within the manufactured component. The typical additively layer manufactured morphology exhibits epitaxial growth of columnar grains and several layer bands. The fabricated γ-TiAl based alloy consists of comparatively large α{sub 2} grains in the near-substrate region, fully lamellar colonies with various sizes and interdendritic γ structure in the intermediate layer bands, followed by fine dendrites and interdendritic γ phases in the top region. Microhardness measurements and tensile testing results indicated relatively homogeneous mechanical characteristics throughout the deposited material. The exception to this homogeneity occurs in the near-substrate region immediately adjacent to the pure Ti substrate used in these experiments, where the alloying process is not as well controlled as in the higher regions. The tensile properties are also different for the vertical (build) direction and horizontal (travel) direction because of the differing microstructure in each direction. The microstructure variation and strengthening mechanisms resulting from the new manufacturing approach are analysed in detail. The results demonstrate the potential to produce full density titanium aluminide components directly using the new additive layer manufacturing method.

The effect of location on the microstructure and mechanical properties of titanium aluminides produced by additive layer manufacturing using in-situ alloying and gas tungsten arc welding

International Nuclear Information System (INIS)

Ma, Yan; Cuiuri, Dominic; Hoye, Nicholas; Li, Huijun; Pan, Zengxi

2015-01-01

An innovative and low cost additive layer manufacturing (ALM) process is used to produce γ-TiAl based alloy wall components. Gas tungsten arc welding (GTAW) provides the heat source for this new approach, combined with in-situ alloying through separate feeding of commercially pure Ti and Al wires into the weld pool. This paper investigates the morphology, microstructure and mechanical properties of the additively manufactured TiAl material, and how these are affected by the location within the manufactured component. The typical additively layer manufactured morphology exhibits epitaxial growth of columnar grains and several layer bands. The fabricated γ-TiAl based alloy consists of comparatively large α 2 grains in the near-substrate region, fully lamellar colonies with various sizes and interdendritic γ structure in the intermediate layer bands, followed by fine dendrites and interdendritic γ phases in the top region. Microhardness measurements and tensile testing results indicated relatively homogeneous mechanical characteristics throughout the deposited material. The exception to this homogeneity occurs in the near-substrate region immediately adjacent to the pure Ti substrate used in these experiments, where the alloying process is not as well controlled as in the higher regions. The tensile properties are also different for the vertical (build) direction and horizontal (travel) direction because of the differing microstructure in each direction. The microstructure variation and strengthening mechanisms resulting from the new manufacturing approach are analysed in detail. The results demonstrate the potential to produce full density titanium aluminide components directly using the new additive layer manufacturing method

Final steps to an all tungsten divertor tokamak

International Nuclear Information System (INIS)

Neu, R.; Bobkov, V.; Dux, R.; Kallenbach, A.; Puetterich, Th.; Greuner, H.; Gruber, O.; Herrmann, A.; Hopf, Ch.; Krieger, K.; Maggi, C.F.; Maier, H.; Mayer, M.; Rohde, V.; Schmid, K.; Suttrop, W.

2007-01-01

Currently 85% of the plasma facing components of ASDEX Upgrade are tungsten coated. Carbon influx from W PFCs is still observed but a reduction of the C content is found in plasma discharges and a lower C fraction is measured in deposited layers in agreement with modelling. W sputtering from the low field side guard and ICRF limiters is mainly due to fast particles from NBI as well as from ions accelerated in the rectified sheath during ICRF operation. The increase of the W source area is reflected in increased W concentrations. For medium to high density discharges the techniques developed so far, namely central heating and ELM pace-making, allow keeping the W concentration in the range of 10 -5 . Boronisation strongly reduces the W influxes and similarly the W content especially during ICRF operation, but this reduction is only temporary and equilibrium is reached already after about 100 discharges

An Experimental Study on Slurry Erosion Resistance of Single and Multilayered Deposits of Ni-WC Produced by Laser-Based Powder Deposition Process

Science.gov (United States)

Balu, Prabu; Hamid, Syed; Kovacevic, Radovan

2013-11-01

Single and multilayered deposits containing different mass fractions of tungsten carbide (WC) in nickel (Ni)-matrix (NT-20, NT-60, NT-80) are deposited on a AISI 4140 steel substrate using a laser-based powder deposition process. The transverse cross section of the coupons reveals that the higher the mass fraction of WC in Ni-matrix leads to a more uniform distribution through Ni-matrix. The slurry erosion resistance of the fabricated coupons is tested at three different impingement angles using an abrasive water jet cutting machine, which is quantified based on the erosion rate. The top layer of a multilayered deposit (i.e., NT-60 in a two-layer NT-60 over NT-20 deposit) exhibits better erosion resistance at all three tested impingement angles when compared to a single-layer (NT-60) deposit. A definite increase in the erosion resistance is noted with an addition of nano-size WC particles. The relationship between the different mass fractions of reinforcement (WC) in the deposited composite material (Ni-WC) and their corresponding matrix (Ni) hardness on the erosion rate is studied. The eroded surface is analyzed in the light of a three-dimensional (3-D) profilometer and a scanning electron microscope (SEM). The results show that a volume fraction of approximately 62% of WC with a Ni-matrix hardness of 540 HV resulting in the gouging out of WC from the Ni-matrix by the action of slurry. It is concluded that the slurry erosion resistance of the AISI 4140 steel can be significantly enhanced by introducing single and multilayered deposits of Ni-WC composite material fabricated by the laser-based powder deposition process.

Kr-Ar and Rb-Sr dating and the genesis of tungsten at the Clea tungsten skarn property, Selwyn Mountains, Yukon Territory

International Nuclear Information System (INIS)

Godwin, C.I.; Armstrong, R.L.; Tompson, K.M.

1980-01-01

Tungsten skarn deposits on the Clea property in the Selwyn Mountains, Y.T., are related genetically to a quartz monzonite stock, about 500 metres in diameter at the surface. Lower Paleozoic sedimentary rocks are metamorphosed for a distance of 3 km from the stock. Tugnsten-bearing skarn mineralization within the altered sedimentary rocks is of two types: sulphide-rich pods and calc-silicate beds. The most significant sheelite concentration is in calc-silicate beds near or adjacent to the quartz monzonite stock. Discordant K-Ar and Rb-Sr isotopic dates indicate that the stock is probably of early Late Cretaceous age, 94 Ma or slightly older, and that it cooled slowly. High initial 87 Sr/ 86 Sr ratios and disequilibrium relationships between K-feldspar phenocrysts and groundmass minerals in the porphyritic phase of the granite rock, and between different granite rock specimens, indicate contamination of crystallizing magma by old sialic continental crust which extends westward under the Selwyn Basin. This study is significant to regional tungsten exploration. Granite rocks associated with tungsten deposits, in this part of the Canadian Cordillera at least, appear to have specific isotope characteristics that indicate they were generated at a specific time and in a particular way. (auth)

Effect of Post-annealing on the Electrochromic Properties of Layer-by-Layer Arrangement FTO-WO3-Ag-WO3-Ag

Science.gov (United States)

Hoseinzadeh, S.; Ghasemiasl, R.; Bahari, A.; Ramezani, A. H.

2018-03-01

In the current study, composites of tungsten trioxide (W03) and silver (Ag) are deposited in a layer-by-layer electrochromic (EC) arrangement onto a fluorine-doped tin oxide coated glass substrate. Tungsten oxide nanoparticles are an n-type semiconductor that can be used as EC cathode material. Nano-sized silver is a metal that can serve as an electron trap center that facilitates charge departure. In this method, the WO3 and Ag nanoparticle powder were deposited by physical vapor deposition onto the glass substrate. The fabricated electrochromic devices (ECD) were post-annealed to examine the effect of temperature on their EC properties. The morphology of the thin film was characterized by scanning electron microscopy and atomic force microscopy. Structural analysis showed that the addition of silver dopant increased the size of the aggregation of the film. The film had an average approximate roughness of about 17.8 nm. The electro-optical properties of the thin film were investigated using cyclic voltammetry and UV-visible spectroscopy to compare the effects of different post-annealing temperatures. The ECD showed that annealing at 200°C provided better conductivity (maximum current of about 90 mA in the oxidation state) and change of transmittance (ΔT = 90% at the continuous switching step) than did the other thin films. The optical band gaps of the thin film showed that it allowed direct transition at 3.85 eV. The EC properties of these combinations of coloration efficiency and response time indicate that the WO3-Ag-WO3-Ag arrangement is a promising candidate for use in such ECDs.

Deposition of HgTe by electrochemical atomic layer epitaxy (EC-ALE)

CSIR Research Space (South Africa)

Venkatasamy, V

2006-04-01

Full Text Available This paper describes the first instance of HgTe growth by electrochemical atomic layer epitaxy (EC-ALE). EC-ALE is the electrochemical analog of atomic layer epitaxy (ALE) and atomic layer deposition (ALD), all of which are based on the growth...

Tuning the mechanical properties of vertical graphene sheets through atomic layer deposition

International Nuclear Information System (INIS)

Davami, Keivan; Jiang, Yijie; Cortes, John; Lin, Chen; Turner, Kevin T; Bargatin, Igor; Shaygan, Mehrdad

2016-01-01

We report the fabrication and characterization of graphene nanostructures with mechanical properties that are tuned by conformal deposition of alumina. Vertical graphene (VG) sheets, also called carbon nanowalls (CNWs), were grown on copper foil substrates using a radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) technique and conformally coated with different thicknesses of alumina (Al_2O_3) using atomic layer deposition (ALD). Nanoindentation was used to characterize the mechanical properties of pristine and alumina-coated VG sheets. Results show a significant increase in the effective Young’s modulus of the VG sheets with increasing thickness of deposited alumina. Deposition of only a 5 nm thick alumina layer on the VG sheets nearly triples the effective Young’s modulus of the VG structures. Both energy absorption and strain recovery were lower in VG sheets coated with alumina than in pure VG sheets (for the same peak force). This may be attributed to the increase in bending stiffness of the VG sheets and the creation of connections between the sheets after ALD deposition. These results demonstrate that the mechanical properties of VG sheets can be tuned over a wide range through conformal atomic layer deposition, facilitating the use of VG sheets in applications where specific mechanical properties are needed. (paper)

Characterisation by optical spectroscopy of a plasma of depositions of thins layers

International Nuclear Information System (INIS)

Chouan, Yannick

1984-01-01

This research thesis reports a work which, by correlating emission and absorption spectroscopic measurements with properties of deposited thin layers, aimed at being a complement to works undertaken by a team in charge of the realisation of a flat screen. In a first part, the author reports the study of a cathodic pulverisation of a silicon target. He describes the experimental set-up, presents correlations obtained between plasma electric properties (target self-polarisation voltage), emission spectroscopic measurements (line profile and intensity) and absorption spectroscopic measurements (density of metastables), and the composition of deposited thin layers for two reactive pulverisation plasmas (Ar-H_2 and Ar-CH_4). The second part addresses the relationship between experimental conditions and spectroscopic characteristics (emission and absorption lines, excitation and rotation temperature) of a He-SiH_4 plasma. The author also determined the most adapted spectroscopic measurements to the 'control' of deposition, and which result in an optimisation of electronic properties and of the deposition rate for the hydrogenated amorphous silicon. The third part reports the characterisation of depositions. Electric and optic measurements are reported. Then, for both deposition techniques, the author relates the influence of experimental conditions to deposition properties and to spectroscopic diagnosis. The author finally presents static characteristics of a thin-layer-based transistor

Detection and reduction of tungsten contamination in ion implantation processes

International Nuclear Information System (INIS)

Polignano, M.L.; Galbiati, A.; Grasso, S.; Mica, I.; Barbarossa, F.; Magni, D.

2016-01-01

In this paper, we review the results of some studies addressing the problem of tungsten contamination in implantation processes. For some tests, the implanter was contaminated by implantation of wafers with an exposed tungsten layer, resulting in critical contamination conditions. First, DLTS (deep level transient spectroscopy) measurements were calibrated to measure tungsten contamination in ion-implanted samples. DLTS measurements of tungsten-implanted samples showed that the tungsten concentration increases linearly with the dose up to a rather low dose (5 x 10 10 cm -2 ). Tungsten deactivation was observed when the dose was further increased. Under these conditions, ToF-SIMS revealed tungsten at the wafer surface, showing that deactivation was due to surface segregation. DLTS calibration could therefore be obtained in the linear dose regime only. This calibration was used to evaluate the tungsten contamination in arsenic implantations. Ordinary operating conditions and critical contamination conditions of the equipment were compared. A moderate tungsten contamination was observed in samples implanted under ordinary operating conditions. This contamination was easily suppressed by a thin screen oxide. On the contrary, implantations in critical conditions of the equipment resulted in a relevant tungsten contamination, which could be reduced but not suppressed even by a relatively thick screen oxide (up to 150 Aa). A decontamination process consisting of high dose implantations of dummy wafers was tested for its efficiency to remove tungsten and titanium contamination. This process was found to be much more effective for titanium than for tungsten. Finally, DLTS proved to be much more sensitive that TXRF (total reflection X-ray fluorescence) in detecting tungsten contamination. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Detection and reduction of tungsten contamination in ion implantation processes

Energy Technology Data Exchange (ETDEWEB)

Polignano, M.L.; Galbiati, A.; Grasso, S.; Mica, I.; Barbarossa, F.; Magni, D. [STMicroelectronics, Agrate Brianza (Italy)

2016-12-15

In this paper, we review the results of some studies addressing the problem of tungsten contamination in implantation processes. For some tests, the implanter was contaminated by implantation of wafers with an exposed tungsten layer, resulting in critical contamination conditions. First, DLTS (deep level transient spectroscopy) measurements were calibrated to measure tungsten contamination in ion-implanted samples. DLTS measurements of tungsten-implanted samples showed that the tungsten concentration increases linearly with the dose up to a rather low dose (5 x 10{sup 10} cm{sup -2}). Tungsten deactivation was observed when the dose was further increased. Under these conditions, ToF-SIMS revealed tungsten at the wafer surface, showing that deactivation was due to surface segregation. DLTS calibration could therefore be obtained in the linear dose regime only. This calibration was used to evaluate the tungsten contamination in arsenic implantations. Ordinary operating conditions and critical contamination conditions of the equipment were compared. A moderate tungsten contamination was observed in samples implanted under ordinary operating conditions. This contamination was easily suppressed by a thin screen oxide. On the contrary, implantations in critical conditions of the equipment resulted in a relevant tungsten contamination, which could be reduced but not suppressed even by a relatively thick screen oxide (up to 150 Aa). A decontamination process consisting of high dose implantations of dummy wafers was tested for its efficiency to remove tungsten and titanium contamination. This process was found to be much more effective for titanium than for tungsten. Finally, DLTS proved to be much more sensitive that TXRF (total reflection X-ray fluorescence) in detecting tungsten contamination. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of Al 2 O 3 Recombination Barrier Layers Deposited by Atomic Layer Deposition in Solid-State CdS Quantum Dot-Sensitized Solar Cells

KAUST Repository

Roelofs, Katherine E.

2013-03-21

Despite the promise of quantum dots (QDs) as a light-absorbing material to replace the dye in dye-sensitized solar cells, quantum dot-sensitized solar cell (QDSSC) efficiencies remain low, due in part to high rates of recombination. In this article, we demonstrate that ultrathin recombination barrier layers of Al2O3 deposited by atomic layer deposition can improve the performance of cadmium sulfide (CdS) quantum dot-sensitized solar cells with spiro-OMeTAD as the solid-state hole transport material. We explored depositing the Al2O3 barrier layers either before or after the QDs, resulting in TiO2/Al2O3/QD and TiO 2/QD/Al2O3 configurations. The effects of barrier layer configuration and thickness were tracked through current-voltage measurements of device performance and transient photovoltage measurements of electron lifetimes. The Al2O3 layers were found to suppress dark current and increase electron lifetimes with increasing Al 2O3 thickness in both configurations. For thin barrier layers, gains in open-circuit voltage and concomitant increases in efficiency were observed, although at greater thicknesses, losses in photocurrent caused net decreases in efficiency. A close comparison of the electron lifetimes in TiO2 in the TiO2/Al2O3/QD and TiO2/QD/Al2O3 configurations suggests that electron transfer from TiO2 to spiro-OMeTAD is a major source of recombination in ss-QDSSCs, though recombination of TiO2 electrons with oxidized QDs can also limit electron lifetimes, particularly if the regeneration of oxidized QDs is hindered by a too-thick coating of the barrier layer. © 2013 American Chemical Society.

HSS DEPOSITION BY PTA – FEASIBILITY AND PROPERTIES

Directory of Open Access Journals (Sweden)

Pavel Rohan

2016-03-01

Full Text Available High speed steels (HSS as iron alloys reinforced by carbides of tungsten, chromium, vanadium and/or cobalt are known for more than 100 years. HSS is commonly used for cutting tools fabrication because of their high hardness, ductility, and strength and temperature resistance. Recently many different kinds of thin layers are often deposited on HSS tools in order to increase their lifetime. HSS are produced by conventional metallurgical methods and the tools are hardened by quenching and tempering. Recently, large part of HSS tools are produced by powder metallurgy (i.e. HIP-hot isostatic pressing. There are also some studies about thermal spraying of HSS but there is no evidence about Plasma Transfer Arc cladding of HSS. Two powders of HSS 23, resp. HSS30 grade were selected and deposited by Plasma Transfer Arc (PTA and pulsed PTA on to mild steel substrate. In order to find the ability of thick layer forming, four layers cladding were used. To minimize heat input the influence of 76 Hz pulsation was also studied. Vickers hardness was measured on cross section and metallography of coatings was done. It was found that with selected parameters thick layer of HSS can be deposited. Pulsation increases the hardness of coatings in comparison with layers produced by direct current PTA. PTA and pulsed PTA methods of HSS parts fabrication can be used for both manufacturing and reparation of cutting tools and also for 3D additive manufacturing process.

CALICE silicon-tungsten electromagnetic calorimeter

Indian Academy of Sciences (India)

A highly granular electromagnetic calorimeter prototype based on tungsten absorber and sampling units equipped with silicon pads as sensitive devices for signal collection is under construction. The full prototype will have in total 30 layers and be read out by about 10000 Si cells of 1 × 1 cm2. A first module consisting of 14 ...

Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layers

Energy Technology Data Exchange (ETDEWEB)

Puttaswamy, Manjunath; Vehkamäki, Marko [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Kukli, Kaupo, E-mail: kaupo.kukli@helsinki.fi [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); University of Tartu, Institute of Physics, W. Ostwald 1, EE-50411 Tartu (Estonia); Dimri, Mukesh Chandra [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Kemell, Marianna; Hatanpää, Timo; Heikkilä, Mikko J. [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland); Mizohata, Kenichiro [University of Helsinki, Department of Physics, P.O. Box 64, FI-00014 Helsinki (Finland); Stern, Raivo [National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, EE-12618 Tallinn (Estonia); Ritala, Mikko; Leskelä, Markku [University of Helsinki, Department of Chemistry, P.O. Box 55, FI-00014 Helsinki (Finland)

2016-07-29

Bismuth iron oxide films with varying contributions from Fe{sub 2}O{sub 3} or Bi{sub 2}O{sub 3} were prepared using atomic layer deposition. Bismuth (III) 2,3-dimethyl-2-butoxide, was used as the bismuth source, iron(III) tert-butoxide as the iron source and water vapor as the oxygen source. The films were deposited as stacks of alternate Bi{sub 2}O{sub 3} and Fe{sub 2}O{sub 3} layers. Films grown at 140 °C to the thickness of 200–220 nm were amorphous, but crystallized upon post-deposition annealing at 500 °C in nitrogen. Annealing of films with intermittent bismuth and iron oxide layers grown to different thicknesses influenced their surface morphology, crystal structure, composition, electrical and magnetic properties. Implications of multiferroic performance were recognized in the films with the remanent charge polarization varying from 1 to 5 μC/cm{sup 2} and magnetic coercivity varying from a few up to 8000 A/m. - Highlights: • Bismuth iron oxide thin films were grown by atomic layer deposition at 140 °C. • The major phase formed in the films upon annealing at 500 °C was BiFeO{sub 3}. • BiFeO{sub 3} films and films containing excess Bi favored electrical charge polarization. • Slight excess of iron oxide enhanced saturative magnetization behavior.

Influence of co-deposited active layers on carrier transport and luminescent properties in organic light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Murata, Masaya; Yamamoto, Takayuki; Haishi, Motoki; Ohtani, Naoki [Department of Electronics, Doshisha University, Tatara-Miyakodani, Kyotanabe-shi, Kyoto (Japan); Ando, Taro [Central Research Laboratory, Hamamatsu Photonics, Hirakuchi, Hamakita-ku, Hamamatsu-shi, Shizuoka (Japan)

2009-01-15

We have investigated the influence of a co-deposited active layer in organic light-emitting diodes (OLEDs) on carrier transport and optical properties to improve radiative characteristics of OLEDs. The co-deposited layer consists of two organic materials; one is a hole transport material (TPD) and the other is an electron transport/emissive material (Alq3). We evaluated current-voltage characteristics and electroluminescence (EL) properties of various samples in which the thicknesses and compound ratios of the co-deposited layers are different. The results indicate that the devices consisting of TPD:Alq3 co-deposited layer sandwiched between TPD and Alq3 layers exhibit lower starting voltages for the light emission than the sample of simple TPD/Alq3 heterojunction structure. In addition, the starting voltage is independent of the thickness of TPD:Alq3 co-deposited layer. These samples have two interfaces at both surfaces of TPD:Alq3 co-deposited layer. Thus, we estimated the radiative recombination occurs at the interfaces. Nevertheless, we found that the radiative recombination occurs only at the interface of TPD:Alq3 co-deposited layer and Alq3 layer. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Simulation of atomic layer deposition on nanoparticle agglomerates

NARCIS (Netherlands)

Jin, W.; van Ommen, J.R.; Kleijn, C.R.

2016-01-01

Coated nanoparticles have many potential applications; production of large quantities is feasible by atomic layer deposition (ALD) on nanoparticles in a fluidized bed reactor. However, due to the cohesive interparticle forces, nanoparticles form large agglomerates, which influences the coating

Measurement of ion species produced due to bombardment of 450 eV N{sub 2}{sup +} ions with hydrocarbons-covered surface of tungsten: Formation of tungsten nitride

Energy Technology Data Exchange (ETDEWEB)

Kumar, S. [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India); Bhatt, P. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, A. [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Singh, B.K.; Singh, B.; Prajapati, S. [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India); Shanker, R., E-mail: shankerorama@gmail.com [Atomic Physics Laboratory, Department of Physics, Institute of Science, Banaras Hindu University, Varanasi 221005 (India)

2016-08-01

A laboratory experiment has been performed to study the ions that are produced due to collisions of 450 eV N{sub 2}{sup +} ions with a hydrocarbons-covered surface of polycrystalline tungsten at room temperature. Using a TOF mass spectrometry technique, the product ions formed in these collisions have been detected, identified and analyzed. Different ion–surface reaction processes, namely, neutralization, reflection, surface induced dissociation, surface induced chemical reactions and desorption are observed and discussed. Apart from the presence of desorbed aliphatic hydrocarbon and other ions, the mass spectra obtained from the considered collisions show the formation and sputtering of tungsten nitride (WN). A layer of WN on tungsten surface is known to decrease the sputtering of bulk tungsten in fusion devices more effectively than when the tungsten is bombarded with other seeding gases (He, Ar). It is further noted that there is a negligible diffusion of N in the bulk tungsten at room temperature.

Developments toward the use of tungsten as armour material in plasma facing components promoted by Euratom-CEA Association

International Nuclear Information System (INIS)

Mitteau, R.; Missiaen, J.M.; Brustolin, P.

2006-01-01

Tungsten is increasingly considered as a prime candidate armour material facing the plasma in fusion experiments (ASDEX, JET, ITER). This material is, however, a challenge for the engineers due to its brittleness at room temperature. Its bonding to structural or cooled substrates is a critical issue. The Euratom-CEA Association promotes the development of evolutionary techniques aiming to produce high performance assemblies between tungsten and various substrates. These are 1) functionally graded tungsten to copper, 2) direct electron beam welding of tungsten to Mo-alloy TZM and 3) the characterisation of tungsten coatings deposited on carbon fibre composite by high energy deposition processes. 1) A functionally graded material eliminates the singular point which weakens the heterogeneous assembly, reducing the stresses and allowing a better behaviour. The sintering of submicronic W-Cu powders is investigated. The green shape is processed from W-CuO powder, which is reduced by a hydrogen flow. The compaction and sintering of layers of various compositions (10 to 30 % Cu) produces an assembly (density of ∼ 94%) with a good cohesion. However, the gradient is not effectively controlled, because of the migration of melt copper during the sintering. Future work aims to improve the process by using spark or microwave assisted sintering. 2) Electron beam welding of Mo-alloy TZM is investigated, to produce high temperature components required by radiation cooled PFCs. They require only mechanical properties and no vacuum sealing. The driving line is to use simple tungsten shapes to reduce the milling cost. In spite of low weldable properties of the refractory alloys, a good bonding up to a depth of 5 mm is obtained. Hardness measurements show that the melt area and the heat affected zone are harder than TZM, the weakest materials at 230 Hv. Quench tests in water from up to 2000 o C are done without apparent crack formation. 3) Finally, characterisation techniques are

Deposition of titanium nitride layers by electric arc – Reactive plasma spraying method

International Nuclear Information System (INIS)

Şerban, Viorel-Aurel; Roşu, Radu Alexandru; Bucur, Alexandra Ioana; Pascu, Doru Romulus

2013-01-01

Highlights: ► Titanium nitride layers deposited by electric arc – reactive plasma spraying method. ► Deposition of titanium nitride layers on C45 steel at different spraying distances. ► Characterization of the coatings hardness as function of the spraying distances. ► Determination of the corrosion behavior of titanium nitride layers obtained. - Abstract: Titanium nitride (TiN) is a ceramic material which possesses high mechanical properties, being often used in order to cover cutting tools, thus increasing their lifetime, and also for covering components which are working in corrosive environments. The paper presents the experimental results on deposition of titanium nitride coatings by a new combined method (reactive plasma spraying and electric arc thermal spraying). In this way the advantages of each method in part are combined, obtaining improved quality coatings in the same time achieving high productivity. Commercially pure titanium wire and C45 steel as substrate were used for experiments. X-ray diffraction analysis shows that the deposited coatings are composed of titanium nitride (TiN, Ti 2 N) and small amounts of Ti 3 O. The microstructure of the deposited layers, investigated both by optical and scanning electron microscopy, shows that the coatings are dense, compact, without cracks and with low porosity. Vickers microhardness of the coatings presents maximum values of 912 HV0.1. The corrosion tests in 3%NaCl solution show that the deposited layers have a high corrosion resistance compared to unalloyed steel substrate.

Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

International Nuclear Information System (INIS)

Valdueza-Felip, S.; Ibáñez, J.; Monroy, E.; González-Herráez, M.; Artús, L.; Naranjo, F.B.

2012-01-01

We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of ∼ 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at ∼ 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: ► Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. ► Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. ► Room-temperature photoluminescence emission at 1.58 eV. ► InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Valdueza-Felip, S., E-mail: sirona.valdueza@depeca.uah.es [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Ibanez, J. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Monroy, E. [CEA-Grenoble, INAC/SP2M/NPSC, 17 rue des Martyrs, 38054 Grenoble cedex 9 (France); Gonzalez-Herraez, M. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain); Artus, L. [Institut de Ciencies de la Terra Jaume Almera, Consejo Superior de Investigaciones Cientificas (CSIC), c/Lluis Sole Sabaris s/n, 08028 Barcelona (Spain); Naranjo, F.B. [Electronics Dept., Polytechnic School, University of Alcala, Madrid-Barcelona Road, km 33.6, 28871 Alcala de Henares, Madrid (Spain)

2012-01-31

We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of {approx} 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at {approx} 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. - Highlights: Black-Right-Pointing-Pointer Improved RF-sputtered InN films on Si(111) using a low-growth-rate InN buffer layer. Black-Right-Pointing-Pointer Enhanced structural quality confirmed by X-ray diffraction and Raman measurements. Black-Right-Pointing-Pointer Room-temperature photoluminescence emission at 1.58 eV. Black-Right-Pointing-Pointer InN films deposited with buffer layer on Si comparable to InN LAYERS on GaN templates.

In situ deuterium inventory measurements of a-C:D layers on tungsten in TEXTOR by laser induced ablation spectroscopy

International Nuclear Information System (INIS)

Gierse, N; Brezinsek, S; Coenen, J W; Huber, A; Laengner, M; Möller, S; Nonhoff, M; Philipps, V; Pospieszczyk, A; Schweer, B; Sergienko, G; Xiao, Q; Zlobinski, M; Samm, U; Giesen, T F

2014-01-01

Laser induced ablation spectroscopy (LIAS) is a diagnostic to provide temporally and spatially resolved in situ measurements of tritium retention and material migration in order to characterize the status of the first wall in future fusion devices. In LIAS, a ns-laser pulse ablates the first nanometres of the first wall plasma-facing components into the plasma edge. The resulting line radiation by plasma excitation is observed by spectroscopy. In the case of the full ionizing plasma and with knowledge of appropriate photon efficiencies for the corresponding line emission the amount of ablated material can be measured in situ. We present the photon efficiency for the deuterium Balmer α-line resulting from ablation in TEXTOR by performing LIAS on amorphous hydrocarbon (a-C:D) layers deposited on tungsten substrate of thicknesses between 0.1 and 1.1 μm. An experimental inverse photon efficiency of [(D/(XB))] D α (EXP) a-C:D→ LIAS D =75.9±23.4 was determined. This value is a factor 5 larger than predicted values from the ADAS database for atomic injection of deuterium under TEXTOR plasma edge conditions and about twice as high, assuming normal wall recycling and release of molecular deuterium and break-up of D 2 via the molecular ion which is usually observed at the high temperature tokamak edge (T e  > 30 eV). (paper)

Real time monitoring of filament-assisted chemically vapor deposited diamond by spectroscopic ellipsometry

International Nuclear Information System (INIS)

Yue Cong; An, I.; Vedam, K.; Collins, R.W.; Nguyen, H.V.; Messier, R.

1991-01-01

Spectroscopic ellipsometry over the range 1.5-4.5 eV was applied as a real time probe of the processes occurring in the initial nucleation of thin film diamond by heated-filament assisted chemical vapor deposition. Using both untreated and diamond-polished c-Si substrates, as well as both carburized and uncarburized tungsten filaments, it was possible to separate and characterize competing phenomena, including the increase in surface temperature induced by filament ignition, the formation of carbide layers, contamination of the substrate by tungsten from the filament, annealing of diamond polishing damage, and, finally, diamond nucleation. An accurate measurement of the true temperature of the substrate surface averaged over the top 500 A can be obtained from the energy position of critical points in the c-Si band structure. For diamond deposition, we operated with an initial excess flow of CH 4 to stimulate nucleation. We applied real time feedback and manual control to reduce the CH 4 flow in the first monolayers of deposition. The thickness of diamond and an estimate of its nucleation density can be obtained from real time spectra, and the latter was in good agreement with that obtained from scanning electron microscopy. (orig.)

Industrial Application of Thin Films (TiAl)N Deposited on Thermo-Wells

International Nuclear Information System (INIS)

Velez, G.; Jaramillo, S.; Arango, Y. C.; Devia, D.; Quintero, J.; Devia, A.

2006-01-01

The thermo-well is formed by two layers, one layer is a ceramic and the other layer is anviloy (comprised tungsten). They are used to coat the thermocouple in the control temperature system during the Aluminum-Silicon alloy melting process. After two weeks of continuous work at 750 deg. C of temperature (the alloy temperature), a high wear in this material is observed, affecting the ceramic. (TiAl)N thin films are deposited directly on the anviloy substrates by the PAPVD (Plasma Assisted Physics Vapor Deposition) in arc pulsed technique, using a TiAl target in a mono-vaporizer system, composed by a reactor and a power controlled system. Two opposite electrodes are placed into the reactor and discharge is produced by a controlled power system. The XRD (X-ray diffraction) patterns show the presence of the (TiAl)N thin film peaks. The morphological characteristics are studied by the scanning probe microscopy (SPM)

Pt–Al2O3 dual layer atomic layer deposition coating in high aspect ratio nanopores

International Nuclear Information System (INIS)

Pardon, Gaspard; Gatty, Hithesh K; Stemme, Göran; Wijngaart, Wouter van der; Roxhed, Niclas

2013-01-01

Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al 2 O 3 ) on Pt in nanopores to form a metal–insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al 2 O 3 layer on such a Pt film forms a metal–insulator–electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 μm thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al 2 O 3 using ALD. (paper)

Pt-Al2O3 dual layer atomic layer deposition coating in high aspect ratio nanopores

Science.gov (United States)

Pardon, Gaspard; Gatty, Hithesh K.; Stemme, Göran; van der Wijngaart, Wouter; Roxhed, Niclas

2013-01-01

Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al2O3) on Pt in nanopores to form a metal-insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al2O3 layer on such a Pt film forms a metal-insulator-electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 μm thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al2O3 using ALD.

Atomic layer deposition for photovoltaics : applications and prospects for solar cell manufacturing

NARCIS (Netherlands)

van Delft, J.A.; Garcia-Alonso Garcia, D.; Kessels, W.M.M.

2012-01-01

Atomic layer deposition (ALD) is a vapour-phase deposition technique capable of depositing high quality, uniform and conformal thin films at relatively low temperatures. These outstanding properties can be employed to face processing challenges for various types of next-generation solar cells;

Atomic layer deposition for nanostructured Li-ion batteries

NARCIS (Netherlands)

Knoops, H.C.M.; Donders, M.E.; Sanden, van de M.C.M.; Notten, P.H.L.; Kessels, W.M.M.

2012-01-01

Nanostructuring is targeted as a solution to achieve the improvements required for implementing Li-ion batteries in a wide range of applications. These applications range in size from electrical vehicles down to microsystems. Atomic layer deposition (ALD) could be an enabling technology for

OPAL Example Segment of Silicon Tungsten Luminometer

CERN Multimedia

OPAL was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The Silicon Tungsten Luminometer was part of OPAL's calorimeter which was used to measure the energy of particles. Most particles end their journey in calorimeters. These detectors measure the energy deposited when particles are slowed down and stopped.

Ultraviolet laser deposition of graphene thin films without catalytic layers

KAUST Repository

Sarath Kumar, S. R.; Alshareef, Husam N.

2013-01-01

In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

Ultraviolet laser deposition of graphene thin films without catalytic layers

KAUST Repository

Sarath Kumar, S. R.

2013-01-09

In this letter, the formation of nanostructured graphene by ultraviolet laser ablation of a highly ordered pyrolytic graphite target under optimized conditions is demonstrated, without a catalytic layer, and a model for the growth process is proposed. Previously, graphene film deposition by low-energy laser (2.3 eV) was explained by photo-thermal models, which implied that graphene films cannot be deposited by laser energies higher than the C-C bond energy in highly ordered pyrolytic graphite (3.7 eV). Here, we show that nanostructured graphene films can in fact be deposited using ultraviolet laser (5 eV) directly over different substrates, without a catalytic layer. The formation of graphene is explained by bond-breaking assisted by photoelectronic excitation leading to formation of carbon clusters at the target and annealing out of defects at the substrate.

Atomic layer deposition of W - based layers on SiO2

NARCIS (Netherlands)

van Nieuwkasteele-Bystrova, Svetlana Nikolajevna; Holleman, J.; Wolters, Robertus A.M.; Aarnink, Antonius A.I.

2003-01-01

W and W1-xNx , where x= 15- 22 at%, thin films were grown using the ALD (Atomic Layer Deposition) principle. Growth rate of W films is about 4- 5 monolayers/ cycle at 300- 350 ºC. Growth rate of W1-xNx is 0.5 monolayer/cycle at 325- 350 ºC. Standard Deviation (STDV) of thickness is about 2%

Simulation of residual thermostress in tungsten after repetitive ELM-like heat loads

Energy Technology Data Exchange (ETDEWEB)

Pestchanyi, S., E-mail: serguei.pestchanyi@kit.edu [Karlsruhe Institute of Technology, IHM (Germany); Garkusha, I. [Institute of Plasma Physics of the NSC KIPT, Kharkov (Ukraine); Landman, I. [Karlsruhe Institute of Technology, IHM (Germany)

2011-10-15

Brittle destruction of tungsten armour under action of edge localised modes of plasma instabilities (ELMs) in ITER is an important issue determining the lifetime of the divertor. Besides, cracking of the armour produces tungsten dust with characteristic size of 1-10 {mu}m flying from the armour surface with velocities up to 10 m/s. Influx of the tungsten dust into the ITER confinement decreases the temperature of the plasma, reduces the thermonuclear gain and even may run the confinement into disruption. This paper describes experiments in QSPA-Kh50 plasma gun and modeling, which has been performed for providing more insight into the physics of tungsten cracking under action of ELMs and for confirmation of the important result on stabilization of the crack development at the tungsten armour surface, predicted in our previous paper - the same authors, 2010. The threshold value of energy density deposition for start of tungsten cracking has been measured as 0.3 MJ/m{sup 2} after 5-10 shots. From analytical considerations three times smaller threshold value has been predicted with increasing number of shots.

Simulation of residual thermostress in tungsten after repetitive ELM-like heat loads

International Nuclear Information System (INIS)

Pestchanyi, S.; Garkusha, I.; Landman, I.

2011-01-01

Brittle destruction of tungsten armour under action of edge localised modes of plasma instabilities (ELMs) in ITER is an important issue determining the lifetime of the divertor. Besides, cracking of the armour produces tungsten dust with characteristic size of 1-10 μm flying from the armour surface with velocities up to 10 m/s. Influx of the tungsten dust into the ITER confinement decreases the temperature of the plasma, reduces the thermonuclear gain and even may run the confinement into disruption. This paper describes experiments in QSPA-Kh50 plasma gun and modeling, which has been performed for providing more insight into the physics of tungsten cracking under action of ELMs and for confirmation of the important result on stabilization of the crack development at the tungsten armour surface, predicted in our previous paper - the same authors, 2010. The threshold value of energy density deposition for start of tungsten cracking has been measured as 0.3 MJ/m 2 after 5-10 shots. From analytical considerations three times smaller threshold value has been predicted with increasing number of shots.

Polar layered deposits on Mars: Inner structure and relation to the climate record

Science.gov (United States)

Kreslavsky, M.; Head, J.

Martian polar layered deposits (PLD) have long been thought to contain a record of the past climate. Roles of deposition, ablation and flow in PLD are a subject of discussion and controversy. Understanding of these roles is critical for reading the climate record. We show that simple mechanism including latitude-dependent deposition and ablation, albedo feedback and role of slopes explains many essential features of the PLD. We consider the present-day PLD is a result of a history of H2O ice deposition and sublimation during some recent period of the geological history. The deposition - ablation balance is a function of latitude. Typically, net deposition occurs in the polar area inside some boundary latitude of zero balance, and net ablation occurs outside. This dividing latitude shifts back and forth due to climate change caused by (1) the change of the spin/orbit parameters ("astronomical forcing"), (2) availability of the water vapor source at lower latitudes (tropical mountain glaciers, high-latitude icy mantles, the opposite polar cap, groundwater discharge events), (3) internal climate instabilities. The outermost position of the ablation/deposition boundary was well outside the present margins of the PLD; in the opposite extremes, the area of the positive balance disappeared, and the whole polar cap underwent ablation. Through time such oscillations produced a dome-shaped stack of deposits with a possible thin layer of deposits outside the dome and with a number of unconformities inside. These unconformities will have an east-west oriented strike and a very shallow dip. There is a positive feedback between the deposition/ablation balance and albedo: high albedo favors deposition, and fresh deposits have high albedo. With this feedback, when the climate system goes through oscillations, the boundary latitude between positive and negative balance will stay for some periods of time at its outermost and innermost positions. This will result in steps in the

Magmatic ore deposits in layered intrusions - Descriptive model for reef-type PGE and contact-type Cu-Ni-PGE deposits

Science.gov (United States)

Zientek, Michael L.

2012-01-01

Layered, ultramafic to mafic intrusions are uncommon in the geologic record, but host magmatic ore deposits containing most of the world's economic concentrations of platinum-group elements (PGE) (figs. 1 and 2). These deposits are mined primarily for their platinum, palladium, and rhodium contents (table 1). Magmatic ore deposits are derived from accumulations of crystals of metallic oxides, or immiscible sulfide, or oxide liquids that formed during the cooling and crystallization of magma, typically with mafic to ultramafic compositions. "PGE reefs" are stratabound PGE-enriched lode mineralization in mafic to ultramafic layered intrusions. The term "reef" is derived from Australian and South African literature for this style of mineralization and used to refer to (1) the rock layer that is mineralized and has distinctive texture or mineralogy (Naldrett, 2004), or (2) the PGE-enriched sulfide mineralization that occurs within the rock layer. For example, Viljoen (1999) broadly defined the Merensky Reef as "a mineralized zone within or closely associated with an unconformity surface in the ultramafic cumulate at the base of the Merensky Cyclic Unit." In this report, we will use the term PGE reef to refer to the PGE-enriched mineralization, not the host rock layer. Within a layered igneous intrusion, reef-type mineralization is laterally persistent along strike, extending for the length of the intrusion, typically tens to hundreds of kilometers. However, the mineralized interval is thin, generally centimeters to meters thick, relative to the stratigraphic thickness of layers in an intrusion that vary from hundreds to thousands of meters. PGE-enriched sulfide mineralization is also found near the contacts or margins of layered mafic to ultramafic intrusions (Iljina and Lee, 2005). This contact-type mineralization consists of disseminated to massive concentrations of iron-copper-nickel-PGE-enriched sulfide mineral concentrations in zones that can be tens to hundreds

Coloration of metallic and/or ceramic surfaces obtained by atomic layer deposited nano-coatings

Energy Technology Data Exchange (ETDEWEB)

Guzman, L., E-mail: luisg47@gmail.com [Fondazione Bruno Kessler (FBK), Centro Materiali e Microsistemi, Functional Materials & Photonic Structures Unit, via Sommarive 18, 38123 Trento (Italy); Vettoruzzo, F. [Ronda High Tech, via Vegri 83, 36010 Zane’, Vicenza (Italy); Laidani, N. [Fondazione Bruno Kessler (FBK), Centro Materiali e Microsistemi, Functional Materials & Photonic Structures Unit, via Sommarive 18, 38123 Trento (Italy)

2016-02-29

By depositing single layer coatings by means of physical vapor techniques, tailoring of their coloration is generally complex because a given color can be obtained only by very high composition control. Physical vapor deposition (PVD) processes are expensive and cannot be easily used for obtaining conformal coating on three-dimensional objects. Moreover PVD coatings exhibit intrinsic defects (columnar structures, pores) that affect their functional properties and applications such as barrier layers. Atomic layer deposition (ALD) technology delivers conformal coatings on different materials with very low defectiveness. A straightforward coloration can be obtained by a combination of two types of layers with different refraction index, deposited to high thickness precision. Computer simulation studies were performed to design the thickness and architecture of multilayer structures, to a total thickness of approximately 100 nm, suitable to modify the typical coloration of some materials, without altering their other physical and chemical properties. The most promising nano-layered structures were then deposited by ALD and tested with regard to their optical properties. Their total thicknesses were specified in such a way to be technically feasible and compatible with future industrial production. The materials employed in this study to build the optical coatings, are two oxides (Al{sub 2}O{sub 3}, TiO{sub 2}) deposited at 120 °C and two nitrides (AlN, TiN), which need a deposition temperature of 400 °C. The possibility of using such modern deposition technology for esthetic and decorative purposes, while maintaining the functional properties, opens perspectives of industrial applications. - Highlights: • Computer simulation is done to design multilayers made of Al{sub 2}O{sub 3}, TiO{sub 2}, AlN, and TiN. • Total thickness (< 120 nm) is specified to be compatible with industrial production. • The most promising nano-layered structures are then produced and

Coloration of metallic and/or ceramic surfaces obtained by atomic layer deposited nano-coatings

International Nuclear Information System (INIS)

Guzman, L.; Vettoruzzo, F.; Laidani, N.

2016-01-01

By depositing single layer coatings by means of physical vapor techniques, tailoring of their coloration is generally complex because a given color can be obtained only by very high composition control. Physical vapor deposition (PVD) processes are expensive and cannot be easily used for obtaining conformal coating on three-dimensional objects. Moreover PVD coatings exhibit intrinsic defects (columnar structures, pores) that affect their functional properties and applications such as barrier layers. Atomic layer deposition (ALD) technology delivers conformal coatings on different materials with very low defectiveness. A straightforward coloration can be obtained by a combination of two types of layers with different refraction index, deposited to high thickness precision. Computer simulation studies were performed to design the thickness and architecture of multilayer structures, to a total thickness of approximately 100 nm, suitable to modify the typical coloration of some materials, without altering their other physical and chemical properties. The most promising nano-layered structures were then deposited by ALD and tested with regard to their optical properties. Their total thicknesses were specified in such a way to be technically feasible and compatible with future industrial production. The materials employed in this study to build the optical coatings, are two oxides (Al_2O_3, TiO_2) deposited at 120 °C and two nitrides (AlN, TiN), which need a deposition temperature of 400 °C. The possibility of using such modern deposition technology for esthetic and decorative purposes, while maintaining the functional properties, opens perspectives of industrial applications. - Highlights: • Computer simulation is done to design multilayers made of Al_2O_3, TiO_2, AlN, and TiN. • Total thickness (< 120 nm) is specified to be compatible with industrial production. • The most promising nano-layered structures are then produced and optically tested. • An

Influence of Be seeding on microstructures of tungsten exposed to D–He mixture plasmas in PISCES and its impacts on retention properties

International Nuclear Information System (INIS)

Miyamoto, Mitsutaka; Nishijima, Daisuke; Baldwin, Matthew; Doerner, Russ; Ueda, Yoshio; Sagara, Akio

2013-01-01

Microstructural changes and their impacts on D retention properties in tungsten (W) are investigated due to mixed species D–Be–He plasma exposure. Be seeding to D + He mixture plasmas results in the suppression of high density He nano-bubbles, which are distinctive internal defects observed in He irradiated/exposed metals. In contrast, cavities appear in the near surface of W exposed to D + Be plasmas, when a thick Be deposition layer forms. Since bubbles are not generally observed in W exposed to D plasma, the cavities seem to be deuterium bubbles formed in the deposited Be layer. While D retention significantly decreases in W exposed to D + He plasma without Be, Be seeding to D + He mixture plasmas obstructs this He seeding effect. As a consequence, it is considered that Be seeding has a more dominant influence on microstructures and D retention in plasma-exposed W than He seeding

Characteristics of a-IGZO/ITO hybrid layer deposited by magnetron sputtering.

Science.gov (United States)

Bang, Joon-Ho; Park, Hee-Woo; Cho, Sang-Hyun; Song, Pung-Keun

2012-04-01

Transparent a-IGZO (In-Ga-Zn-O) films have been actively studied for use in the fabrication of high-quality TFTs. In this study, a-IGZO films and a-IGZO/ITO double layers were deposited by DC magnetron sputtering under various oxygen flow rates. The a-IGZO films showed an amorphous structure up to 500 degrees C. The deposition rate of these films decreased with an increase in the amount of oxygen gas. The amount of indium atoms in the film was confirmed to be 11.4% higher than the target. The resistivity of double layer follows the rules for parallel DC circuits The maximum Hall mobility of the a-IGZO/ITO double layers was found to be 37.42 cm2/V x N s. The electrical properties of the double layers were strongly dependent on their thickness ratio. The IGZO/ITO double layer was subjected to compressive stress, while the ITO/IGZO double layer was subjected to tensile stress. The bending tolerance was found to depend on the a-IGZO thickness.

FABRICATION OF GAS-FILLED TUNGSTEN-COATED GLASS SHELLS

International Nuclear Information System (INIS)

NIKROO, A; BAUGH, W; STEINMAN, D.A.

2003-09-01

OAK-B135 Deuterium (D 2 ) filled glass shells coated with a high Z element are needed for high energy density (HED) experiments by researchers at Los Alamos National Laboratory. They report here on our initial attempt to produce such shells. Glass shells made using the drop tower technique were coated with gold, palladium or tungsten, or a mixture of two of these elements. It was found that gold and palladium coatings did not stick well to the glass and resulted in poor or delaminated films. Tungsten coatings resulted in films suitable for these targets. Bouncing of shells during coating resulted in uniform tungsten coatings, but the surface of such coatings were filled with small nodules. Proper agitation of shells using a tapping technique resulted in smooth films with minimal particulate contamination. For coating rates of ∼ 0.15 (micro)m/hr coatings with ∼ 2 nm RMS surface finish could be deposited. The surface roughness of coatings at higher rates, 0.7 (micro)m/hr, was considerably worse (∼ 100 nm RMS). The columnar structure of the coatings allowed permeation filling of the tungsten coated glass shells with deuterium at 300 C

Plasma-assisted atomic layer deposition of TiO2 compact layers for flexible mesostructured perovskite solar cells

NARCIS (Netherlands)

Zardetto, V.; Di Giacomo, F.; Lucarelli, G.; Kessels, W.M.M.; Brown, T.M.; Creatore, M.

2017-01-01

In mesostructured perovskite solar cell devices, charge recombination processes at the interface between the transparent conductive oxide, perovskite and hole transport layer are suppressed by depositing an efficient compact TiO2 blocking layer. In this contribution we investigate the role of the

THE EFFECT OF PRESSURE, BIAS VOLTAGE AND ANNEALING TEMPERATURE ON N₂ AND N₂+SiH₄ DOPED WC/C DC MAGNETRON SPUTTERED LAYERS

Directory of Open Access Journals (Sweden)

Peter Hornak

2017-12-01

Full Text Available Tungsten carbide (WC/C layers are often researched due to their outstanding mechanical and tribological properties. Here, optimized indented hardness (HIT, indentation modulus (EIT and coefficient of friction (COF values were measured to study the effect of pressure and bias voltage on WC/C layers, deposited on Si by DC magnetron spluttering. Maximal values of HIT=37.2±4.8 GPa, EIT=447±28 GPa and COF=0.64±0.09 were obtained. Additionally, the effect of temperature on optimized layers deposited with and without N₂ and N₂+SiH₄ annealed at 200 °C, 500 °C and 800 °C, were also investigated. The values of HIT, EIT and COF and, observed morphology and structural composition of these contaminated and non-contaminated WC/C layers were evaluated. It was found that layer degradation occurred at different rates depending on the temperature and gas mixture used during the annealing and deposition process, respectively.

Modifying of Cotton Fabric Surface with Nano-ZnO Multilayer Films by Layer-by-Layer Deposition Method

Directory of Open Access Journals (Sweden)

Sarıışık Merih

2010-01-01

Full Text Available Abstract ZnO nanoparticle–based multilayer nanocomposite films were fabricated on cationized woven cotton fabrics via layer-by-layer molecular self-assembly technique. For cationic surface charge, cotton fabrics were pretreated with 2,3-epoxypropyltrimethylammonium chloride (EP3MAC by pad-batch method. XPS and SEM were used to examine the deposited nano-ZnO multilayer films on the cotton fabrics. The nano-ZnO films deposited on cotton fabrics exhibited excellent antimicrobial activity against Staphylococcus aureus bacteria. The results also showed that the coated fabrics with nano-ZnO multilayer films enhanced the protection of cotton fabrics from UV radiation. Physical tests (tensile strength of weft and warp yarns, air permeability and whiteness values were performed on the fabrics before and after the treatment with ZnO nanoparticles to evaluate the effect of layer-by-layer (LbL process on cotton fabrics properties.

Iron binary and ternary coatings with molybdenum and tungsten

Energy Technology Data Exchange (ETDEWEB)

Yar-Mukhamedova, Gulmira, E-mail: gulmira-alma-ata@mail.ru [Institute Experimental and Theoretical Physics Al-Farabi Kazakh National University, 050038, Al-Farabi av., 71, Almaty (Kazakhstan); Ved, Maryna; Sakhnenko, Nikolay; Karakurkchi, Anna; Yermolenko, Iryna [National Technical University “Kharkov Polytechnic Institute”, Kharkov (Ukraine)

2016-10-15

Highlights: • High quality coatings of double Fe-Mo and ternary Fe-Mo-W electrolytic alloys can be produced both in a dc and a pulsed mode. • Application of unipolar pulsed current allows receiving an increased content of the alloying components and their more uniform distribution over the surface. • It is established that Fe-Mo and Fe-Mo-W coatings have an amorphous structure and exhibit improved corrosion resistance and microhardness as compared with the steel substrate due to the inclusion molybdenum and tungsten. - Abstract: Electrodeposition of Fe-Mo-W and Fe-Mo layers from a citrate solution containing iron(III) on steel and iron substrates is compared. The utilization of iron(III) compounds significantly improved the electrolyte stability eliminating side anodic redox reactions. The influence of concentration ratios and electrodeposition mode on quality, chemical composition, and functional properties of the alloys is determined. It has been found that alloys deposited in pulse mode have more uniform surface morphology and chemical composition and contain less impurities. Improvement in physical and mechanical properties as well as corrosion resistance of Fe-Mo and Fe-Mo-W deposits when compared with main alloy forming metals is driven by alloying components chemical passivity as well as by alloys amorphous structure. Indicated deposits can be considered promising materials in surface hardening technologies and repair of worn out items.

Low-temperature atomic layer deposition of MgO thin films on Si

International Nuclear Information System (INIS)

Vangelista, S; Mantovan, R; Lamperti, A; Tallarida, G; Kutrzeba-Kotowska, B; Spiga, S; Fanciulli, M

2013-01-01

Magnesium oxide (MgO) films have been grown by atomic layer deposition in the wide deposition temperature window of 80–350 °C by using bis(cyclopentadienyl)magnesium and H 2 O precursors. MgO thin films are deposited on both HF-last Si(1 0 0) and SiO 2 /Si substrates at a constant growth rate of ∼0.12 nm cycle −1 . The structural, morphological and chemical properties of the synthesized MgO thin films are investigated by x-ray reflectivity, grazing incidence x-ray diffraction, time-of-flight secondary ion mass spectrometry and atomic force microscopy measurements. MgO layers are characterized by sharp interface with the substrate and limited surface roughness, besides good chemical uniformity and polycrystalline structure for thickness above 7 nm. C–V measurements performed on Al/MgO/Si MOS capacitors, with MgO in the 4.6–11 nm thickness range, allow determining a dielectric constant (κ) ∼ 11. Co layers are grown by chemical vapour deposition in direct contact with MgO without vacuum-break (base pressure 10 −5 –10 −6  Pa). The as-grown Co/MgO stacks show sharp interfaces and no elements interdiffusion among layers. C–V and I–V measurements have been conducted on Co/MgO/Si MOS capacitors. The dielectric properties of MgO are not influenced by the further process of Co deposition. (paper)

Measuring deuterium permeation through tungsten near room temperature under plasma loading using a getter layer and ion-beam based detection

Directory of Open Access Journals (Sweden)

Stefan Kapser

2017-08-01

Full Text Available A method to measure deuterium permeation through tungsten near room temperature under plasma loading is presented. The permeating deuterium is accumulated in a getter layer of zirconium, titanium or erbium, respectively, on the unexposed side of the sample. Subsequently, the amount of deuterium in the getter is measured ex-situ using nuclear reaction analysis. A cover layer system on the getter prevents direct loading of the getter with deuterium from the gas phase during plasma loading. In addition, it enables the distinction of deuterium in the getter and at the cover surface. The method appears promising to add additional permeation measurement capabilities to deuterium retention experiments, also in other plasma devices, without the need for a complex in-situ permeation measurement setup.

Atomic layer deposition of TiO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Tallarida, Massimo; Dessmann, Nils; Staedter, Matthias; Friedrich, Daniel; Michling, Marcel; Schmeisser, Dieter [BTU-Cottbus, Konrad-Wachsmann-Allee 17, 03046 Cottbus (Germany)

2011-07-01

We present a study of the initial growth of TiO{sub 2} on Si(111) by atomic layer deposition (ALD). The Si substrate was etched with NH{sub 4}F before ALD to remove the native oxide film and to produce a Si-H termination. In-situ experiments by means of photoemission and X-ray absorption spectroscopy were conducted with synchrotron radiation on Ti-oxide films produced using Ti-tetra-iso-propoxide (TTIP) and water as precursors. O 1s, Ti 2p, C 1s, and S i2p core level, and O 1s and Ti 2p absorption edges show the transition of the Ti-oxide properties during the first layers. The growth starts with a very small growth rate (0.03 nm/cycle) due to the growth inhibition of the Si-H termination and proceeds with higher growth rate (0.1 nm/cycle) after 1.5 nm Ti-oxide has been deposited.

Experimental mechanistic investigation of the nanostructuring of tungsten with low energy helium plasmas

Energy Technology Data Exchange (ETDEWEB)

Fiflis, P., E-mail: fiflis1@illinois.edu; Connolly, N.; Ruzic, D.N.

2016-12-15

Helium ion bombardment of tungsten at temperatures between approximately one third and one half of its melting point has shown growth of nanostructures colloquially referred to as “fuzz”. The nanostructures take the form of thin tendrils of diameter about 30 nm and grow out of the bulk material. Tungsten will and does compose one of the key materials for plasma facing components (PFCs) in fusion reactors. The formation of nanostructured fuzz layers on PFCs would be detrimental to the performance of the reactor, and must therefore be avoided. Previous experiments have shown evidence that tungsten fuzz is initially grown by loop punching of helium bubbles created in the bulk. However, once the tendrils grow to sufficient length, the tendrils should intercept the entire helium flux, halting the production of fuzz. Fuzz continues to grow though. To increase the understanding of the mechanisms of tungsten fuzz formation, and thereby aid the avoidance of its production, a series of tests were performed to examine the validity of several theories regarding later stage tungsten fuzz growth. Tests showed that the fuzz formation was dependent solely on the bombardment of helium ions, and not on electric fields, or adatom diffusion. Experiments employing a tungsten coated molybdenum sample indicate the presence of a strong mixing layer and strongly suggest that tungsten fuzz growth continues to occur from the bottom up even as the tendrils grow in size. Tests also show a similarity between different metals exposed to helium ion fluxes where the ratio of bubble diameter to tendril diameter is constant.

Experimental mechanistic investigation of the nanostructuring of tungsten with low energy helium plasmas

International Nuclear Information System (INIS)

Fiflis, P.; Connolly, N.; Ruzic, D.N.

2016-01-01

Helium ion bombardment of tungsten at temperatures between approximately one third and one half of its melting point has shown growth of nanostructures colloquially referred to as “fuzz”. The nanostructures take the form of thin tendrils of diameter about 30 nm and grow out of the bulk material. Tungsten will and does compose one of the key materials for plasma facing components (PFCs) in fusion reactors. The formation of nanostructured fuzz layers on PFCs would be detrimental to the performance of the reactor, and must therefore be avoided. Previous experiments have shown evidence that tungsten fuzz is initially grown by loop punching of helium bubbles created in the bulk. However, once the tendrils grow to sufficient length, the tendrils should intercept the entire helium flux, halting the production of fuzz. Fuzz continues to grow though. To increase the understanding of the mechanisms of tungsten fuzz formation, and thereby aid the avoidance of its production, a series of tests were performed to examine the validity of several theories regarding later stage tungsten fuzz growth. Tests showed that the fuzz formation was dependent solely on the bombardment of helium ions, and not on electric fields, or adatom diffusion. Experiments employing a tungsten coated molybdenum sample indicate the presence of a strong mixing layer and strongly suggest that tungsten fuzz growth continues to occur from the bottom up even as the tendrils grow in size. Tests also show a similarity between different metals exposed to helium ion fluxes where the ratio of bubble diameter to tendril diameter is constant.

Tungsten and tungsten alloys by powder metallurgy

International Nuclear Information System (INIS)

Belhadjhamida, A.; German, R.M.

1991-01-01

Tungsten has a historical link with powder metallurgy and there is continued progress in expanding the available compositions and processing options. This paper starts with an introduction to the history of tungsten powder metallurgy and use this as a basis for analyzing some of the current trends. The literature base in tungsten processing is expanding and includes new alloys, microstructures, and processing routes. A few examples will be emphasize here to produce a frame work for this program, including description of sintering mechanisms for tungsten, liquid phase sintering advances, hot consolidation fundamentals, and options for complex shaping using powder injection modeling. For this base, subsequent presentations will expand on these fundamental advances

Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Hennessy, John, E-mail: john.j.hennessy@jpl.nasa.gov; Jewell, April D.; Balasubramanian, Kunjithapatham; Nikzad, Shouleh [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109 (United States)

2016-01-15

Aluminum fluoride (AlF{sub 3}) is a low refractive index material with promising optical applications for ultraviolet (UV) wavelengths. An atomic layer deposition process using trimethylaluminum and anhydrous hydrogen fluoride has been developed for the deposition of AlF{sub 3} at substrate temperatures between 100 and 200 °C. This low temperature process has resulted in thin films with UV-optical properties that have been characterized by ellipsometric and reflection/transmission measurements at wavelengths down to 200 nm. The optical loss for 93 nm thick films deposited at 100 °C was measured to be less than 0.2% from visible wavelengths down to 200 nm, and additional microstructural characterization demonstrates that the films are amorphous with moderate tensile stress of 42–105 MPa as deposited on silicon substrates. X-ray photoelectron spectroscopy analysis shows no signature of residual aluminum oxide components making these films good candidates for a variety of applications at even shorter UV wavelengths.

Area-selective atomic layer deposition of platinum using photosensitive polyimide.

Science.gov (United States)

Vervuurt, René H J; Sharma, Akhil; Jiao, Yuqing; Kessels, Wilhelmus Erwin M M; Bol, Ageeth A

2016-10-07

Area-selective atomic layer deposition (AS-ALD) of platinum (Pt) was studied using photosensitive polyimide as a masking layer. The polyimide films were prepared by spin-coating and patterned using photolithography. AS-ALD of Pt using poly(methyl-methacrylate) (PMMA) masking layers was used as a reference. The results show that polyimide has excellent selectivity towards the Pt deposition, after 1000 ALD cycles less than a monolayer of Pt is deposited on the polyimide surface. The polyimide film could easily be removed after ALD using a hydrogen plasma, due to a combination of weakening of the polyimide resist during Pt ALD and the catalytic activity of Pt traces on the polyimide surface. Compared to PMMA for AS-ALD of Pt, polyimide has better temperature stability. This resulted in an improved uniformity of the Pt deposits and superior definition of the Pt patterns. In addition, due to the absence of reflow contamination using polyimide the nucleation phase during Pt ALD is drastically shortened. Pt patterns down to 3.5 μm were created with polyimide, a factor of ten smaller than what is possible using PMMA, at the typical Pt ALD processing temperature of 300 °C. Initial experiments indicate that after further optimization of the polyimide process Pt features down to 100 nm should be possible, which makes AS-ALD of Pt using photosensitive polyimide a promising candidate for patterning at the nanoscale.

Carbon decorative coatings by dip-, spin-, and spray-assisted layer-by-layer assembly deposition.

Science.gov (United States)

Hong, Jinkee; Kang, Sang Wook

2011-09-01

We performed a comparative surface analysis of all-carbon nano-objects (multiwall carbon nanotubes (MWNT) or graphene oxide (GO) sheets) based multilayer coatings prepared using three widely used nanofilm fabrication methods: dip-, spin-, and spray-assisted layer-by-layer (LbL) deposition. The resultant films showed a marked difference in their growth mechanisms and surface morphologies. Various carbon decorative coatings were synthesized with different surface roughness values, despite identical preparation conditions. In particular, smooth to highly rough all-carbon surfaces, as determined by atomic force microscopy (AFM) and scanning electron microscopy (SEM), were readily obtained by manipulating the LbL deposition methods. As was confirmed by the AFM and SEM analyses, this finding indicated the fundamental morphological evolution of one-dimensional nano-objects (MWNT) and two-dimensional nano-objects (GO) by control of the surface roughness through the deposition method. Therefore, an analysis of the three LbL-assembly methods presented herein may offer useful information about the industrial use of carbon decorative coatings and provide an insight into ways to control the structures of multilayer coatings by tuning the morphologies of carbon nano-objects.

Massive CO2 Ice Deposits Sequestered in the South Polar Layered Deposits of Mars

Science.gov (United States)

Phillips, Roger J.; Davis, Brian J.; Tanaka, Kenneth L.; Byrne, Shane; Mellon, Michael T.; Putzig, Nathaniel E.; Haberle, Robert M.; Kahre, Melinda A.; Campbell, Bruce A.; Carter, Lynn M.; Smith, Isaac B.; Holt, John W.; Smrekar, Suzanne E.; Nunes, Daniel C.; Plaut, Jeffrey J.; Egan, Anthony F.; Titus, Timothy N.; Seu, Roberto

2011-01-01

Shallow Radar soundings from the Mars Reconnaissance Orbiter reveal a buried deposit of carbon dioxide (CO2) ice within the south polar layered deposits of Mars with a volume of 9500 to 12,500 cubic kilometers, about 30 times that previously estimated for the south pole residual cap. The deposit occurs within a stratigraphic unit that is uniquely marked by collapse features and other evidence of interior CO2 volatile release. If released into the atmosphere at times of high obliquity, the CO2 reservoir would increase the atmospheric mass by up to 80%, leading to more frequent and intense dust storms and to more regions where liquid water could persist without boiling.

Layer-by-layer deposition of zirconium oxide films from aqueous solutions for friction reduction in silicon-based microelectromechanical system devices

International Nuclear Information System (INIS)

Liu Junfu; Nistorica, Corina; Gory, Igor; Skidmore, George; Mantiziba, Fadziso M.; Gnade, Bruce E.

2005-01-01

This work reports layer-by-layer deposition of zirconium oxide on a Si surface from aqueous solutions using the successive ionic layer adsorption and reaction technique. The process consists of repeated cycles of adsorption of zirconium precursors, water rinse, and hydrolysis. The film composition was determined by X-ray photoelectron spectroscopy. The film thickness was determined by Rutherford backscattering spectrometry, by measuring the Zr atom concentration. The average deposition rate from a 0.1 M Zr(SO 4 ) 2 solution on a SiO 2 /Si surface is 0.62 nm per cycle. Increasing the acidity of the zirconium precursor solution inhibits the deposition of the zirconium oxide film. Atomic force microscopy shows that the zirconium oxide film consists of nanoparticles of 10-50 nm in the lateral dimension. The surface roughness increased with increasing number of deposition cycles. Friction measurements made with a microelectromechanical system device reveal a reduction of 45% in the friction coefficient of zirconium oxide-coated surfaces vs. uncoated surfaces in air

Numerical analysis of tungsten erosion and deposition processes under a DEMO divertor plasma

Directory of Open Access Journals (Sweden)

Yuki Homma

2017-08-01

Full Text Available Erosion reduction of tungsten (W divertor target is one of the most important research subjects for the DEMO fusion reactor design, because the divertor target has to sustain large fluence of incident particles, composed mainly of fuel ions and seeded impurities, during year-long operation period. Rate of net erosion and deposition on outer divertor target has been studied by using the integrated SOL/divertor plasma code SONIC and the kinetic full-orbit impurity transport code IMPGYRO. Two background plasmas have been used: one is lower density ni and higher temperature case and the other is higher ni and lower temperature case. Net erosion has been seen in the lower ni case. But in the higher ni case, the net erosion has been almost suppressed due to increased return rate and reduced self-sputtering yield. Following two factors are important to understand the net erosion formation: (i ratio of the 1st ionization length of sputtered W atom to the Larmor gyro radius of W+ ion, (ii balance between the friction force and the thermal force exerted on W ions. DEMO divertor design should take into account these factors to prevent target erosion.

Plasma enhanced atomic layer deposited MoOx emitters for silicon heterojunction solar cells

OpenAIRE

Ziegler, J.; Mews, M.; Kaufmann, K.; Schneider, T.; Sprafke, A.N.; Korte, L.; Wehrsporn, R.B

2015-01-01

A method for the deposition of molybdenum oxide MoOx with high growth rates at temperatures below 200 C based on plasma enhanced atomic layer deposition is presented. The stoichiometry of the overstoichiometric MoOx films can be adjusted by the plasma parameters. First results of these layers acting as hole selective contacts in silicon heterojunction solar cells are presented and discussed

In vitro characterization of hydroxyapatite layers deposited by APS and HVOF thermal spraying methods

Directory of Open Access Journals (Sweden)

Radu Alexandru Roşu

2012-03-01

Full Text Available Titanium alloys are successfully used in medicine as implants due to their high mechanical properties and good biocompatibility. To improve implant osseointegration of titanium alloys, they are covered with hydroxyapatite because of its bioactive properties. Coating the implants with hydroxyapatite by thermal spraying, due to the temperatures developed during the deposition process, the structure can be degraded, leading to formation of secondary phases, such as TCP, TT CP, CaO. The paper presents the experimental results of hydroxyapatite layers deposition by two thermal spraying methods: Atmospheric Plasma Spraying (APS and High Velocity Oxy-Fuel (HVOF. The microstructure of the deposited layers is characterized by X-ray diffraction analysis and electronic microscopy. The bioactivity of the hydroxyapatite layers was investigated in Simulated Body Fluid (SBF by immersing the covered samples deposited by the two thermal spraying methods. In both cases the coatings did not present defects as cracks or microcracks. X-ray diffraction performed on hydroxyapatite deposited layers shows that the structure was strongly influenced by plasma jet temperature, the structure consisting mainly of TCP (Ca3PO42. The samples deposited by HVO F after immersing in SBF lead to formation of biological hydroxyapatite, certifying the good bioactivity of the coatings.

Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization

Energy Technology Data Exchange (ETDEWEB)

Kraus, Theodore J.; Nepomnyashchii, Alexander B.; Parkinson, B. A., E-mail: bparkin1@uwyo.edu [Department of Chemistry, School of Energy Resources, University of Wyoming, Laramie, Wyoming 82071 (United States)

2015-01-15

Atomic layer deposition was used to grow epitaxial layers of anatase (001) TiO{sub 2} on the surface of SrTiO{sub 3} (100) crystals with a 3% lattice mismatch. The epilayers grow as anatase (001) as confirmed by x-ray diffraction. Atomic force microscope images of deposited films showed epitaxial layer-by-layer growth up to about 10 nm, whereas thicker films, of up to 32 nm, revealed the formation of 2–5 nm anatase nanocrystallites oriented in the (001) direction. The anatase epilayers were used as substrates for dye sensitization. The as received strontium titanate crystal was not sensitized with a ruthenium-based dye (N3) or a thiacyanine dye (G15); however, photocurrent from excited state electron injection from these dyes was observed when adsorbed on the anatase epilayers. These results show that highly ordered anatase surfaces can be grown on an easily obtained substrate crystal.

Nucleation and adhesion of diamond films on Co cemented tungsten carbide

Energy Technology Data Exchange (ETDEWEB)

Polini, R.; Santarelli, M.; Traversa, E.

1999-12-01

Diamond deposits were grown using hot filament chemical vapor deposition (CVD) on pretreated Co cemented tungsten carbide (WC-Co) substrates with an average grain size of 6 {micro}m. Depositions were performed with 0.5 or 1.0% methane concentration and with substrate temperatures ranging from 750 to 1,000 C. Diamond nucleation densities were measured by scanning electron microscopy. Scratched and bias-enhanced nucleation pretreated substrates showed the larger nucleation densities. Etching of the WC performed by Murakami's reagent, followed by surface-Co dissolution (MP pretreatment), led to a roughened but scarcely nucleating surface. The performance of a scratching prior to the MP pretreatment allowed one to increase the nucleation density, due scratching-induced defects, confined in the outermost layer of WC grains, which act as nucleation sites. Smaller nucleation densities were observed with increasing the substrate temperature and reducing the methane concentration, confirming that diamond nucleates via a heterogeneous process. The adhesion of continuous films was evaluated by the reciprocal of the slope of crack radius-indentation load functions. The substrate pretreatments mainly affected the film adhesion, while the influence of CVD process conditions was minor. The two main factors that improve the diamond film adhesion are the coating-substrate contact area and the surface-Co removal.

Microstructural characterization of chemical bath deposited and sputtered Zn(O,S) buffer layers

International Nuclear Information System (INIS)

Gautron, E.; Buffière, M.; Harel, S.; Assmann, L.; Arzel, L.; Brohan, L.; Kessler, J.; Barreau, N.

2013-01-01

The present work aims at investigating the microstructure of Zn(O,S) buffer layers relative to their deposition route, namely either chemical bath deposition (CBD) or RF co-sputtering process (PVD) under pure Ar. The core of the study consists of cross-sectional transmission electron microscopy (TEM) characterization of the differently grown Zn(O,S) thin films on co-evaporated Cu(In,Ga)Se 2 (CIGSe) absorbers. It shows that the morphology of Zn(O,S) layer deposited on CIGSe using CBD process is made of a thin layer of well oriented ZnS sphalerite-(111) and/or ZnS wurtzite-(0002) planes parallel to CIGSe chalcopyrite-(112) planes at the interface with CIGSe followed by misoriented nanometer-sized ZnS crystallites in an amorphous phase. As far as (PVD)Zn(O,S) is concerned, the TEM analyses reveal two different microstructures depending on the S-content in the films: for [S] / ([O] + [S]) = 0.6, the buffer layer is made of ZnO zincite and ZnS wurtzite crystallites grown nearly coherently to each other, with (0002) planes nearly parallel with CIGSe-(112) planes, while for [S] / ([O] + [S]) = 0.3, it is made of ZnO zincite type crystals with O atoms substituted by S atoms, with (0002) planes perfectly aligned with CIGSe-(112) planes. Such microstructural differences can explain why photovoltaic performances are dependent on the Zn(O,S) buffer layer deposition route. - Highlights: ► Zn(O,S) layers were grown by chemical bath (CBD) or physical vapor (PVD) deposition. ► For CBD, a 3 nm ZnS layer is followed by ZnS nano-crystallites in an amorphous phase. ► For PVD with [S] / ([O] + [S]) = 0.3, the layer has a Zn(O,S) zincite structure. ► For PVD with [S] / ([O] + [S]) = 0.6, ZnS wurtzite and ZnO zincite phases are mixed

Ionically Paired Layer-by-Layer Hydrogels: Water and Polyelectrolyte Uptake Controlled by Deposition Time

Directory of Open Access Journals (Sweden)

Victor Selin

2018-01-01

Full Text Available Despite intense recent interest in weakly bound nonlinear (“exponential” multilayers, the underlying structure-property relationships of these films are still poorly understood. This study explores the effect of time used for deposition of individual layers of nonlinearly growing layer-by-layer (LbL films composed of poly(methacrylic acid (PMAA and quaternized poly-2-(dimethylaminoethyl methacrylate (QPC on film internal structure, swelling, and stability in salt solution, as well as the rate of penetration of invading polyelectrolyte chains. Thicknesses of dry and swollen films were measured by spectroscopic ellipsometry, film internal structure—by neutron reflectometry (NR, and degree of PMAA ionization—by Fourier-transform infrared spectroscopy (FTIR. The results suggest that longer deposition times resulted in thicker films with higher degrees of swelling (up to swelling ratio as high as 4 compared to dry film thickness and stronger film intermixing. The stronger intermixed films were more swollen in water, exhibited lower stability in salt solutions, and supported a faster penetration rate of invading polyelectrolyte chains. These results can be useful in designing polyelectrolyte nanoassemblies for biomedical applications, such as drug delivery coatings for medical implants or tissue engineering matrices.

Dark material in the polar layered deposits and dunes on Mars

Science.gov (United States)

Herkenhoff, Ken E.; Vasavada, Ashwin R.

1999-07-01

Viking infrared thermal mapping and bistatic radar data suggest that the bulk density of the north polar erg material is much lower than that of the average Martian surface or of dark dunes at lower latitudes. We have derived a thermal inertia of 245-280Jm-2s-1/2K-1(5.9-6.7×10-3calcm-2s-1/2K-1) for the Proctor dune field and 25-150Jm-2s-1/2K-1(0.6-3.6×10-3calcm-2s-1/2K-1) for the north polar erg. The uniqueness of the thermophysical properties of the north polar erg material may be due to a unique polar process that has created them. The visible and near-infrared spectral reflectance of the erg suggests that the dark material may be composed of basalt or ferrous clays. These data are consistent with the dark material being composed of basaltic ash or filamentary sublimate residue (FSR) particles derived from erosion of the layered deposits. Dark dust may be preferentially concentrated at the surface of the layered deposits by the formation of FSR particles upon sublimation of water ice. Further weathering and erosion of these areas of exposed layered deposits may form the dark, saltating material that is found in both polar regions. Dark FSR particles may saltate for great distances before eventually breaking down into dust grains, re-mixing with the global dust reservoir, and being recycled into the polar layered deposits via atmospheric suspension.

The Design and Use of Tungsten Coated TZM Molybdenum Tile Inserts in the DIII-D Tokamak Divertor

Energy Technology Data Exchange (ETDEWEB)

Murphy, Christopher [General Atomics, San Diego; Nygren, R. E. [Sandia National Laboratories (SNL); Chrobak, C P. [General Atomics, San Diego; Buchenauer, Dean [Sandia National Laboratories (SNL); Holtrop, Kurt [General Atomics, San Diego; Unterberg, Ezekial A. [ORNL; Zach, Mike P. [ORNL

2017-08-01

Future tokamak devices are envisioned to utilize a high-Z metal divertor with tungsten as theleading candidate. However, tokamak experiments with tungsten divertors have seen significantdetrimental effects on plasma performance. The DIII-D tokamak presently has carbon as theplasma facing surface but to study the effect of tungsten on the plasma and its migration aroundthe vessel, two toroidal rows of carbon tiles in the divertor region were modified with high-Zmetal inserts, composed of a molybdenum alloy (TZM) coated with tungsten. A dedicated twoweek experimental campaign was run with the high-Z metal inserts. One row was coated withtungsten containing naturally occurring levels of isotopes. The second row was coated withtungsten where the isotope 182W was enhanced from the natural level of 26% up to greater than90%. The different isotopic concentrations enabled the experiment to differentiate between thetwo different sources of metal migration from the divertor. Various coating methods wereexplored for the deposition of the tungsten coating, including chemical vapor deposition,electroplating, vacuum plasma spray, and electron beam physical vapor deposition. The coatingswere tested to see if they were robust enough to act as a divertor target for the experiment. Testsincluded cyclic thermal heating using a high power laser and high-fluence deuterium plasmabombardment. The issues associate with the design of the inserts (tile installation, thermal stress,arcing, leading edges, surface preparation, etc.), are reviewed. The results of the tests used toselect the coating method and preliminary experimental observations are presented.

Atomic layer deposition for photovoltaics: applications and prospects for solar cell manufacturing

International Nuclear Information System (INIS)

Van Delft, J A; Garcia-Alonso, D; Kessels, W M M

2012-01-01

Atomic layer deposition (ALD) is a vapour-phase deposition technique capable of depositing high quality, uniform and conformal thin films at relatively low temperatures. These outstanding properties can be employed to face processing challenges for various types of next-generation solar cells; hence, ALD for photovoltaics (PV) has attracted great interest in academic and industrial research in recent years. In this review, the recent progress of ALD layers applied to various solar cell concepts and their future prospects are discussed. Crystalline silicon (c-Si), copper indium gallium selenide (CIGS) and dye-sensitized solar cells (DSSCs) benefit from the application of ALD surface passivation layers, buffer layers and barrier layers, respectively. ALD films are also excellent moisture permeation barriers that have been successfully used to encapsulate flexible CIGS and organic photovoltaic (OPV) cells. Furthermore, some emerging applications of the ALD method in solar cell research are reviewed. The potential of ALD for solar cells manufacturing is discussed, and the current status of high-throughput ALD equipment development is presented. ALD is on the verge of being introduced in the PV industry and it is expected that it will be part of the standard solar cell manufacturing equipment in the near future. (paper)

Development of tungsten fibre-reinforced tungsten composites towards their use in DEMO—potassium doped tungsten wire

Science.gov (United States)

Riesch, J.; Han, Y.; Almanstötter, J.; Coenen, J. W.; Höschen, T.; Jasper, B.; Zhao, P.; Linsmeier, Ch; Neu, R.

2016-02-01

For the next step fusion reactor the use of tungsten is inevitable to suppress erosion and allow operation at elevated temperature and high heat loads. Tungsten fibre-reinforced composites overcome the intrinsic brittleness of tungsten and its susceptibility to operation embrittlement and thus allow its use as a structural as well as an armour material. That this concept works in principle has been shown in recent years. In this contribution we present a development approach towards its use in a future fusion reactor. A multilayer approach is needed addressing all composite constituents and manufacturing steps. A huge potential lies in the optimization of the tungsten wire used as fibre. We discuss this aspect and present studies on potassium doped tungsten wire in detail. This wire, utilized in the illumination industry, could be a replacement for the so far used pure tungsten wire due to its superior high temperature properties. In tensile tests the wire showed high strength and ductility up to an annealing temperature of 2200 K. The results show that the use of doped tungsten wire could increase the allowed fabrication temperature and the overall working temperature of the composite itself.

Development of tungsten fibre-reinforced tungsten composites towards their use in DEMO—potassium doped tungsten wire

International Nuclear Information System (INIS)

Riesch, J; Han, Y; Höschen, T; Zhao, P; Neu, R; Almanstötter, J; Coenen, J W; Jasper, B; Linsmeier, Ch

2016-01-01

For the next step fusion reactor the use of tungsten is inevitable to suppress erosion and allow operation at elevated temperature and high heat loads. Tungsten fibre-reinforced composites overcome the intrinsic brittleness of tungsten and its susceptibility to operation embrittlement and thus allow its use as a structural as well as an armour material. That this concept works in principle has been shown in recent years. In this contribution we present a development approach towards its use in a future fusion reactor. A multilayer approach is needed addressing all composite constituents and manufacturing steps. A huge potential lies in the optimization of the tungsten wire used as fibre. We discuss this aspect and present studies on potassium doped tungsten wire in detail. This wire, utilized in the illumination industry, could be a replacement for the so far used pure tungsten wire due to its superior high temperature properties. In tensile tests the wire showed high strength and ductility up to an annealing temperature of 2200 K. The results show that the use of doped tungsten wire could increase the allowed fabrication temperature and the overall working temperature of the composite itself. (paper)

Flaking of co-deposited hydrogenated carbon layers on the TFTR limiter

International Nuclear Information System (INIS)

Skinner, C.H.; Gentile, C.A.; Menon, M.M.; Barry, R.E.

1999-01-01

Flaking of co-deposited layers on the inner limiter tiles was recently observed in TFTR. This phenomenon was unexpected and has occurred since the termination of plasma operations on 4 April 1997. Flaking affects approximately 15% of the observable tiles and appears on isotropic graphite but not on carbon fibre composite tiles. Photographic images of the flakes and precise measurements of the limiter geometry are reported. The mobilizability of tritium retained in co-deposited layers is an important factor in safety analyses of future DT reactors. A programme to analyse the flakes and tiles is underway. (author). Letter-to-the-editor

Tungsten foil laminate for structural divertor applications - Joining of tungsten foils

Science.gov (United States)

Reiser, Jens; Rieth, Michael; Möslang, Anton; Dafferner, Bernhard; Hoffmann, Jan; Mrotzek, Tobias; Hoffmann, Andreas; Armstrong, D. E. J.; Yi, Xiaoou

2013-05-01

This paper is the fourth in our series on tungsten laminates. The aim of this paper is to discuss laminate synthesis, meaning the joining of tungsten foils. It is obvious that the properties of the tungsten laminate strongly depend on the combination of (i) interlayer and (ii) joining technology, as this combination defines (i) the condition of the tungsten foil after joining (as-received or recrystallised) as well as (ii) the characteristics of the interface between the tungsten foil and the interlayer (wettability or diffusion leading to a solid solution or the formation of intermetallics). From the example of tungsten laminates joined by brazing with (i) an eutectic silver copper brazing filler, (ii) copper, (iii) titanium, and (iv) zirconium, the microstructure will be discussed, with special focus on the interface. Based on our assumptions of the mechanism of the extraordinary ductility of tungsten foil we present three syntheses strategies and make recommendations for the synthesis of high temperature tungsten laminates.

Development and characterisation of a tungsten-fibre reinforced tungsten composite

International Nuclear Information System (INIS)

Riesch, Johann

2012-01-01

In tungsten-fibre reinforced tungsten, tungsten wire is combined with a tungsten matrix. The outstanding ductility of the fibres and extrinsic mechanisms of energy dissipation lead to an intense toughening. With extensive analytical and experimental investigations a manufacturing method based on chemical vapour infiltration is developed and first material is produced. The toughening mechanisms are shown by means of sophisticated mechanical experiments i.a. X-ray microtomography.

Sensor-based atomic layer deposition for rapid process learning and enhanced manufacturability

Science.gov (United States)

Lei, Wei

In the search for sensor based atomic layer deposition (ALD) process to accelerate process learning and enhance manufacturability, we have explored new reactor designs and applied in-situ process sensing to W and HfO 2 ALD processes. A novel wafer scale ALD reactor, which features fast gas switching, good process sensing compatibility and significant similarity to the real manufacturing environment, is constructed. The reactor has a unique movable reactor cap design that allows two possible operation modes: (1) steady-state flow with alternating gas species; or (2) fill-and-pump-out cycling of each gas, accelerating the pump-out by lifting the cap to employ the large chamber volume as ballast. Downstream quadrupole mass spectrometry (QMS) sampling is applied for in-situ process sensing of tungsten ALD process. The QMS reveals essential surface reaction dynamics through real-time signals associated with byproduct generation as well as precursor introduction and depletion for each ALD half cycle, which are then used for process learning and optimization. More subtle interactions such as imperfect surface saturation and reactant dose interaction are also directly observed by QMS, indicating that ALD process is more complicated than the suggested layer-by-layer growth. By integrating in real-time the byproduct QMS signals over each exposure and plotting it against process cycle number, the deposition kinetics on the wafer is directly measured. For continuous ALD runs, the total integrated byproduct QMS signal in each ALD run is also linear to ALD film thickness, and therefore can be used for ALD film thickness metrology. The in-situ process sensing is also applied to HfO2 ALD process that is carried out in a furnace type ALD reactor. Precursor dose end-point control is applied to precisely control the precursor dose in each half cycle. Multiple process sensors, including quartz crystal microbalance (QCM) and QMS are used to provide real time process information. The

The nanostructure and microstructure of SiC surface layers deposited by MWCVD and ECRCVD

Science.gov (United States)

Dul, K.; Jonas, S.; Handke, B.

2017-12-01

Scanning electron microscopy (SEM) and Atomic force microscopy (AFM) have been used to investigate ex-situ the surface topography of SiC layers deposited on Si(100) by Microwave Chemical Vapour Deposition (MWCVD) -S1,S2 layers and Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) - layers S3,S4, using silane, methane, and hydrogen. The effects of sample temperature and gas flow on the nanostructure and microstructure have been investigated. The nanostructure was described by three-dimensional surface roughness analysis based on digital image processing, which gives a tool to quantify different aspects of surface features. A total of 13 different numerical parameters used to describe the surface topography were used. The scanning electron image (SEM) of the microstructure of layers S1, S2, and S4 was similar, however, layer S3 was completely different; appearing like grains. Nonetheless, it can be seen that no grain boundary structure is present in the AFM images.

Low-Temperature Process for Atomic Layer Chemical Vapor Deposition of an Al2O3 Passivation Layer for Organic Photovoltaic Cells.

Science.gov (United States)

Kim, Hoonbae; Lee, Jihye; Sohn, Sunyoung; Jung, Donggeun

2016-05-01

Flexible organic photovoltaic (OPV) cells have drawn extensive attention due to their light weight, cost efficiency, portability, and so on. However, OPV cells degrade quickly due to organic damage by water vapor or oxygen penetration when the devices are driven in the atmosphere without a passivation layer. In order to prevent damage due to water vapor or oxygen permeation into the devices, passivation layers have been introduced through methods such as sputtering, plasma enhanced chemical vapor deposition, and atomic layer chemical vapor deposition (ALCVD). In this work, the structural and chemical properties of Al2O3 films, deposited via ALCVD at relatively low temperatures of 109 degrees C, 200 degrees C, and 300 degrees C, are analyzed. In our experiment, trimethylaluminum (TMA) and H2O were used as precursors for Al2O3 film deposition via ALCVD. All of the Al2O3 films showed very smooth, featureless surfaces without notable defects. However, we found that the plastic flexible substrate of an OPV device passivated with 300 degrees C deposition temperature was partially bended and melted, indicating that passivation layers for OPV cells on plastic flexible substrates need to be formed at temperatures lower than 300 degrees C. The OPV cells on plastic flexible substrates were passivated by the Al2O3 film deposited at the temperature of 109 degrees C. Thereafter, the photovoltaic properties of passivated OPV cells were investigated as a function of exposure time under the atmosphere.

Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing

International Nuclear Information System (INIS)

Hong, David; Chiang, Hai Q.; Presley, Rick E.; Dehuff, Nicole L.; Bender, Jeffrey P.; Park, Cheol-Hee; Wager, John F.; Keszler, Douglas A.

2006-01-01

A novel deposition methodology is employed for exploratory development of a class of high-performance transparent thin-film transistor (TTFT) channel materials involving oxides composed of heavy-metal cations with (n - 1)d 10 ns 0 (n ≥ 4) electronic configurations. The method involves sequential radio-frequency sputter deposition of thin, single cation oxide layers and subsequent post-deposition annealing in order to obtain a multi-component oxide thin film. The viability of this rapid materials development methodology is demonstrated through the realization of high-performance TTFTs with channel layers composed of zinc oxide/tin oxide, and tin oxide/indium oxide

Tungsten and carbon surface change under high dose plasma exposure

International Nuclear Information System (INIS)

Martynenko, Y.V.; Khripunov, B.I.; Petrov, V.B.

2009-01-01

Study of surface composition dynamics has been made on the LENTA linear plasma simulator. Experiments have been made on tungsten and carbon materials subjected to steady-state plasma exposure. The achieved ion doses on the surface were 10 21 ion cm -2 . WL 10 tungsten containing 1% of La2O3 oxide and titanium-doped graphite RG-T were studied. The following experimental conditions were varied in these experiments: energy of ions, surface temperature, working gas. Irradiations of tungsten WL 10 were executed in deuterium plasma at low ion energies (about 20 eV) and at 200 eV for temperatures below 340 K. Graphite RG-T was exposed at 1300 K. Elevated surface temperature (about 1050K) was also characteristic of experiments on tungsten sample under nitrogen plasma impact (simulated inter-ELMs condition). Surface microstructure modification has been observed and surface composition changes were found on the materials showing influence of high dose plasma irradiations on element redistribution in the near surface layers. (author)

NREL's Advanced Atomic Layer Deposition Enables Lithium-Ion Battery

Science.gov (United States)

Battery Technology News Release: NREL's Advanced Atomic Layer Deposition Enables Lithium-Ion Battery increasingly demanding needs of any battery application. These lithium-ion batteries feature a hybrid solid further customized lithium-ion battery materials for high performance devices by utilizing our patented

Underwater explosive compaction-sintering of tungsten-copper coating on a copper surface

Science.gov (United States)

Chen, Xiang; Li, Xiaojie; Yan, Honghao; Wang, Xiaohong; Chen, Saiwei

2018-01-01

This study investigated underwater explosive compaction-sintering for coating a high-density tungsten-copper composite on a copper surface. First, 50% W-50% Cu tungsten-copper composite powder was prepared by mechanical alloying. The composite powder was pre-compacted and sintered by hydrogen. Underwater explosive compaction was carried out. Finally, a high-density tungsten-copper coating was obtained by diffusion sintering of the specimen after explosive compaction. A simulation of the underwater explosive compaction process showed that the peak value of the pressure in the coating was between 3.0 and 4.8 GPa. The hardness values of the tungsten-copper layer and the copper substrate were in the range of 87-133 and 49 HV, respectively. The bonding strength between the coating and the substrate was approximately 100-105 MPa.

Self-limiting atomic layer deposition of conformal nanostructured silver films

International Nuclear Information System (INIS)

Golrokhi, Zahra; Chalker, Sophia; Sutcliffe, Christopher J.; Potter, Richard J.

2016-01-01

Graphical abstract: - Highlights: • We grow metallic silver by direct liquid injection thermal atomic layer deposition. • Highly conformal silver nanoparticle coatings on high aspect ratio surfaces. • An ALD temperature growth window between 123 and 128 °C is established. • ALD cycles provides sub nanometre control of silver growth. • Catalytic dehydrogenation ALD mechanism has been elucidated by in-situ QCM. - Abstract: The controlled deposition of ultra-thin conformal silver nanoparticle films is of interest for applications including anti-microbial surfaces, plasmonics, catalysts and sensors. While numerous techniques can produce silver nanoparticles, few are able to produce highly conformal coatings on high aspect ratio surfaces, together with sub-nanometre control and scalability. Here we develop a self-limiting atomic layer deposition (ALD) process for the deposition of conformal metallic silver nanoparticle films. The films have been deposited using direct liquid injection ALD with ((hexafluoroacetylacetonato)silver(I)(1,5-cyclooctadiene)) and propan-1-ol. An ALD temperature window between 123 and 128 °C is identified and within this range self-limiting growth is confirmed with a mass deposition rate of ∼17.5 ng/cm"2/cycle. The effects of temperature, precursor dose, co-reactant dose and cycle number on the deposition rate and on the properties of the films have been systematically investigated. Under self-limiting conditions, films are metallic silver with a nano-textured surface topography and nanoparticle size is dependent on the number of ALD cycles. The ALD reaction mechanisms have been elucidated using in-situ quartz crystal microbalance (QCM) measurements, showing chemisorption of the silver precursor, followed by heterogeneous catalytic dehydrogenation of the alcohol to form metallic silver and an aldehyde.

Improvement of oxidation resistance of copper by atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Chang, M.L.; Cheng, T.C. [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China); Lin, M.C. [Research Center for Biomedical Devices and Prototyping Production, Taipei Medical University, No. 250, Wu-Hsing Street, Taipei 110, Taiwan (China); Lin, H.C., E-mail: hclinntu@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China); Chen, M.J., E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 106, Taiwan (China)

2012-10-01

Graphical abstract: Results of glancing incident angle diffraction (GIXD) show the bare-Cu specimen was attacked by oxidation, whereas the coated-Cu specimens prevented from this problem. Highlights: Black-Right-Pointing-Pointer Deposition of Al{sub 2}O{sub 3} films on pure copper by an atomic layer deposition (ALD) technique. Black-Right-Pointing-Pointer Analysis of properties of the films coated at various substrate temperatures using the ALD technique. Black-Right-Pointing-Pointer Identification of the improvement of oxidation resistance of pure copper by the ALD-Al{sub 2}O{sub 3} films. Black-Right-Pointing-Pointer Assessment of the durability of the ALD-Al{sub 2}O{sub 3} films by adhesion strength. - Abstract: Al{sub 2}O{sub 3} films were deposited by the atomic layer deposition (ALD) technique onto pure copper at temperatures in the range 100-200 Degree-Sign C. The chemical composition, microstructure, and mechanic properties of the ALD-deposited Al{sub 2}O{sub 3} films were systematically analyzed. The variations in the film characteristics with substrate temperature were observed. Oxidation trials revealed that 20-nm-thick Al{sub 2}O{sub 3} films deposited at a substrate temperature as low as 100 Degree-Sign C suppress oxidative attack on pure copper. The Al{sub 2}O{sub 3} films also showed excellent durability of adhesion strength, according to predictions using the Coffin-Manson model based on the results of accelerated temperature cycling tests. These features indicate that ALD-deposited Al{sub 2}O{sub 3} film is a very promising candidate to be a protective coating for pure copper.

Overview of processing technologies for tungsten-steel composites and FGMs for fusion applications

Directory of Open Access Journals (Sweden)

Matějíček Jiří

2015-06-01

Full Text Available Tungsten is a prime candidate material for the plasma-facing components in future fusion devices, e.g. ITER and DEMO. Because of the harsh and complex loading conditions and the differences in material properties, joining of the tungsten armor to the underlying construction and/or cooling parts is a complicated issue. To alleviate the thermal stresses at the joint, a sharp interface may be replaced by a gradual one with a smoothly varying composition. In this paper, several techniques for the formation of tungsten-steel composites and graded layers are reviewed. These include plasma spraying, laser cladding, hot pressing and spark plasma sintering. Structure, composition and selected thermal and mechanical properties of representative layers produced by each of these techniques are presented. A summary of advantages and disadvantages of the techniques and an assessment of their suitability for the production of plasma-facing components is provided.

Numerical simulation of CFC and tungsten target erosion in ITER-FEAT divertor

International Nuclear Information System (INIS)

Filatov, V.

2003-01-01

Physical, chemical and thermal surface erosion for water-cooled target armoured by CFC and tungsten is simulated by numerical code ERosion OF Immolated Layer (EROFIL-1). Some calculation results on the CFC and tungsten vertical target (VT) erosion in the ITER-FEAT divertor are presented for various operation modes (normal operations, slow transients, ELMs and disruptions). The main erosion mechanisms of CFC armour are the chemical and sublimation ones. Maximum erosion depth per 3000 cycles during normal operations and slow transients is of 2.7 mm at H phase and of 13.5 mm at DT phase. An evaluation of VT tungsten armour erosion per 3000 cycles of H and DT operations shows that no physical or chemical erosion as well as no melting are expected for tungsten armour at normal operations and slow transients. The tungsten armour melting at 2x10 6 ELMs is not allowable. The 300 disruptions are not dangerous in view of evaporation

Spatial Atomic Layer Deposition of transparent conductive oxides

NARCIS (Netherlands)

Illiberi, A.; Scherpenborg, R.; Poodt, P.; Roozeboom, F.

2013-01-01

Undoped and indium doped ZnO films have been grown by Spatial Atomic Layer Deposition at atmospheric pressure. The electrical properties of ZnO films are controlled by varying the indium content in the range from 0 to 15 %. A minimum resistivity value of 3 mΩ•cm is measured in 180 nm thick films for

Thermal oxidation of tungsten-based sputtered coatings

International Nuclear Information System (INIS)

Louro, C.; Cavaleiro, A.

1997-01-01

The effect of the addition of nickel, titanium, and nitrogen on the air oxidation behavior of W-based sputtered coatings in the temperature range 600 to 800 C was studied. In some cases these additions significantly improved the oxidation resistance of the tungsten coatings. As reported for bulk tungsten, all the coatings studied were oxidized by layers following a parabolic law. Besides WO 3 and WO x phases detected in all the oxidized coatings, TiO 2 and NiWO 4 were also detected for W-Ti and W-Ni films, respectively. WO x was present as an inner protective compact layer covered by the porous WO 3 oxide. The best oxidation resistance was found for W-Ti and W-N-Ni coatings which also presented the highest activation energies (E a = 234 and 218 kJ/mol, respectively, as opposed to E a ∼ 188 kJ/mol for the other coatings). These lower oxidation weight gains were attributed to the greater difficulty of the inward diffusion of oxygen ions for W-Ti films, owing to the formation of fine particles of TiO 2 , and the formation of the external, more protective layer of NiWO 4 for W-N-Ni coatings

Preparation of YBCO on YSZ layers deposited on silicon and sapphire by MOCVD: influence of the intermediate layer on the quality of the superconducting film

International Nuclear Information System (INIS)

Garcia, G.; Casado, J.; Llibre, J.; Doudkowski, M.; Santiso, J.; Figueras, A.; Schamm, S.; Dorignac, D.; Grigis, C.; Aguilo, M.

1995-01-01

YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO 2 amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an in-plane texture defined by the following relationships: (100) YSZ // (1-102) sapphire and (110) YSZ // (01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers. (orig.)

Silicon protected with atomic layer deposited TiO2

DEFF Research Database (Denmark)

Seger, Brian; Tilley, David S.; Pedersen, Thomas

2013-01-01

The semiconducting materials used for photoelectrochemical (PEC) water splitting must withstand the corrosive nature of the aqueous electrolyte over long time scales in order to be a viable option for large scale solar energy conversion. Here we demonstrate that atomic layer deposited titanium di...

Chemical etching of Tungsten thin films for high-temperature surface acoustic wave-based sensor devices

Energy Technology Data Exchange (ETDEWEB)

Spindler, M., E-mail: m.spindler@ifw-dresden.de [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany); Herold, S.; Acker, J. [BTU Cottbus – Senftenberg, Faculty of Sciences, P.O. Box 101548, 01968 Senftenberg (Germany); Brachmann, E.; Oswald, S.; Menzel, S.; Rane, G. [IFW Dresden, SAWLab Saxony, P.O. Box 270116, D-01171 Dresden (Germany)

2016-08-01

Surface acoustic wave devices are widely used as wireless sensors in different application fields. Recent developments aimed to utilize those devices as temperature sensors even in the high temperature range (T > 300 °C) and in harsh environmental conditions. Therefore, conventional materials, which are used for the substrate and for the interdigital transducer finger electrodes such as multilayers or alloys based on Al or Cu have to be exchanged by materials, which fulfill some important criteria regarding temperature related effects. Electron beam evaporation as a standard fabrication method is not well applicable for depositing high temperature stable electrode materials because of their very high melting points. Magnetron sputtering is an alternative deposition process but is also not applicable for lift-off structuring without any further improvement of the structuring process. Due to a relatively high Ar gas pressure of about 10{sup −1} Pa, the sidewalls of the photoresist line structures are also covered by the metallization, which subsequently prevents a successful lift-off process. In this study, we investigate the chemical etching of thin tungsten films as an intermediate step between magnetron sputtering deposition of thin tungsten finger electrodes and the lift-off process to remove sidewall covering for a successful patterning process of interdigital transducers. - Highlights: • We fabricated Tungsten SAW Electrodes by magnetron sputtering technology. • An etching process removes sidewall covering of photoresist, which allows lift-off. • Tungsten etching rates based on a hydrogen peroxide solutions were determined.

Scanning electron microscopy characterisation of carbon deposited layers in Tore Supra

International Nuclear Information System (INIS)

Delchambre, E.; Brosset, C.; Reichle, R.; Devynck, P.; Guirlet, R.; Tsitrone, E.; Saikali, W.; Dominici, C.; Charai, A.

2003-01-01

For long discharges in Tore-Supra, an infra-red safety system has been installed to survey surface temperature of the target plates located below the toroidal pump limiter. A shift in temperature is attributed to the growth of a carbon layer at the surface of the neutralizer and has been estimated to a temperature increase of 400 Celsius degrees between virgin and layered surfaces. For temperature safety analysis, target plates have been cleaned and carbon layers were sampled for scanning electronic microscopy (SEM) study. SEM micrographs have allowed to measure the deposited layer thickness and to study the specific fractal and stratified structure. Energy dispersive X-ray spectroscopy analysis has permitted to distinguish carbon layers corresponding to boronization and then to deduce an average growth rate of about 20 nm/s. The growth rate is not constant and is likely to depend on plasma operation parameters. These analyses completed by time of flight secondary ions mass spectrometry (ToF-SIMS) have shown a beneficial effect of the boronization on metallic contamination of the plasma, confirming the in situ optical spectroscopic measurements. These analyses have also shown an increase of hydrogen storage in carbon layer due to boronization. Although the measurements performed on deposited layer are very local, the results reflect the history of the 2002 campaign. (A.C.)

Development, characterization and testing of tungsten doped DLC coatings for dry rotary swaging

Directory of Open Access Journals (Sweden)

Hasselbruch Henning

2015-01-01

Full Text Available The extensive use of lubricant during rotary swaging is particularly required for a good surface finish of the work piece and the reduction of tool wear. Abandonment of lubricant would improve the ecological process-balance and could also accelerate for further work piece refinements. Also cleaning of the manufactured components becomes obsolete. Thus, a dry machining is highly innovative, consequently new strategies to substitute the lubricant functions become necessary. To encounter the changed tribological conditions due to dry rotary swaging, low friction, tungsten doped, hard DLC coatings and structured surfaces are the most promising approaches. In this work the development of hard coating by means of reactive magnetron sputtering is presented, a promising layer variant is deposited on a set of tools and then tested and investigated in real use.

Effect of Annealing on Tungsten Oxide Thin Films for Acetone Gas ...

Indian Academy of Sciences (India)

11

Abstract: The gas sensing properties and topology of tungsten oxide thin films ..... Figure 3: Atomic force microscopy images of sensing film for (a) as-deposited (a) .... the surface, it forms compounds with the oxygen ions species present on the ...

Refining waste hardmetals into tungsten oxide nanosheets via facile method

Energy Technology Data Exchange (ETDEWEB)

Li, Zhifei; Zheng, Guangwei; Wang, Jinshu, E-mail: wangjsh@bjut.edu.cn; Li, Hongyi, E-mail: lhy06@bjut.edu.cn; Wu, Junshu; Du, Yucheng [Beijing University of Technology, Key Laboratory of Advanced Functional Materials, School of Materials Science and Engineering (China)

2016-04-15

A new hydrothermal system has been designed to recycle waste WC–Co hardmetal with low cobalt (Co) content (3 %). In the solution system, nitric acid was designed to dissolve Co, H{sub 2}O{sub 2} served as oxidant to accelerate the oxidation of the WC–Co hardmetals, and fluorine (F{sup −}) was designed to dissolve and recrystallize generated tungsten oxides, which were found to possess a layered structure using scanning electron microscopy and transmission electron microscopy. The obtained tungsten oxides were identified as WO{sub 3}·0.33H{sub 2}O by X-ray diffraction and their specific surface area was measured as 89.2 m{sup 2} g{sup −1} via N{sub 2} adsorption–desorption techniques. The present layered structure tungsten oxides exhibited a promising capability for removing lead ion (Pb{sup 2+}) and organic species, such as methyl blue. The adsorption model was found to be in agreement with Langmuir isotherm model. Given the facile synthesis procedure and promising properties of final products, this new approach should have great potential for refining some other waste hardmetals or tungsten products.Graphical AbstractA new hydrothermal system was designed to recycle waste hardmetal with low cobalt content. Through this method, waste hardmetal was refined into WO{sub 3}·0.33H{sub 2}O nanosheets which shows excellent adsorption capacities toward methylene blue and lead ion (Pb{sup 2+}).

OES control of a low-pressure DC arc at TiN layer deposition

International Nuclear Information System (INIS)

Andreev, M.A.; Maksimenko, V.N.; Ershov-Pavlov, E.A.

1995-01-01

Results are presented of a low-pressure DC arc study as applied for a deposition of TiN wear-resistant coatings in a commercial plant. Plasma parameters of the arc have been measured by optical emission spectroscopy. The plasma emission spectra have been recorded using a grating spectrometer equipped with an on line computer. Changes in the resulting layers due to a difference in working conditions have been determined by metallography and X-ray analysis giving composition, microstructure and thickness of the resulting layers. Using the data, a correlation between emission spectra of the arc and the TiN layer characteristics has been found. The results allow monitoring parameters of the deposition process to obtain necessary quality of the layer and to increase the process efficiency

Structural and optical properties of nano-structured tungsten-doped ZnO thin films grown by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Ngom, B.D. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); Groupes de Laboratoires de physique des Solides et Sciences des Materiaux, Faculte des sciences et Techniques Universite Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Senegal); NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa)], E-mail: bdngom@tlabs.ac.za; Mpahane, T. [NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Manyala, N. [Department of Physics and Electronics National University of Lesotho (Lesotho); Nemraoui, O. [NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Buttner, U. [Engineering Department, University of Stellenbosch (South Africa); Kana, J.B. [Department of Physique University of Yaounde 1 (Cameroon); Fasasi, A.Y. [Centre for Energy Research and Development, Obafemi Awolowo University, Ile-Ife, Osun State (Nigeria); Maaza, M. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); NANO-Sciences Laboratories, Materials Research Group, iThemba LABS, National Research Foundation (South Africa); Beye, A.C. [African Laser Centre, CSIR campus, P.O. Box 395, Pretoria (South Africa); Groupes de Laboratoires de physique des Solides et Sciences des Materiaux, Faculte des sciences et Techniques Universite Cheikh Anta Diop de Dakar (UCAD), B.P. 25114 Dakar-Fann Dakar (Senegal)

2009-01-15

Novel highly c-oriented tungsten-doped zinc oxide (WZO) thin films with 1 wt% were grown by pulsed laser deposition (PLD) technique on corning 1737F glass substrate. The effects of laser energy on the structural, morphological as well as optical transmission properties of the films were studied. The films were highly transparent with average transmittance exceeding 87% in the wavelength region lying between 400 and 2500 nm. X-ray diffraction analysis (XRD) results indicated that the WZO films had c-axis preferred orientation with wurtzite structure. Film thickness and the full width at half maximum (FWHM) of the (0 0 2) peaks of the films were found to be dependent on laser fluence. The composition determined through Rutherford backscattering spectroscopy (RBS) appeared to be independent of the laser fluence. By assuming a direct band gap transition, the band gap values of 3.36, 3.34 and 3.31 eV were obtained for corresponding laser fluence of 1, 1.7 and 2.7 J cm{sup -2}, respectively. Compared with the reported undoped ZnO band gap value of 3.37 eV, it is conjectured that the observed low band gap values obtained in this study may be attributable to tungsten incorporation in the films as well as the increase in laser fluence. The high transparency makes the films useful as optical windows while the high band gap values support the idea that the films could be good candidates for optoelectronic applications.

Controlled nanostructuration of polycrystalline tungsten thin films

Energy Technology Data Exchange (ETDEWEB)

Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l' Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d' Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

2013-05-07

Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

Tungsten foil laminate for structural divertor applications – Joining of tungsten foils

Energy Technology Data Exchange (ETDEWEB)

Reiser, Jens, E-mail: jens.reiser@kit.edu [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials (IAM-AWP) (Germany); Rieth, Michael; Möslang, Anton; Dafferner, Bernhard; Hoffmann, Jan [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials (IAM-AWP) (Germany); Mrotzek, Tobias; Hoffmann, Andreas [PLANSEE SE, Reutte (Austria); Armstrong, D.E.J.; Yi, Xiaoou [University of Oxford, Department of Materials (United Kingdom)

2013-05-15

This paper is the fourth in our series on tungsten laminates. The aim of this paper is to discuss laminate synthesis, meaning the joining of tungsten foils. It is obvious that the properties of the tungsten laminate strongly depend on the combination of (i) interlayer and (ii) joining technology, as this combination defines (i) the condition of the tungsten foil after joining (as-received or recrystallised) as well as (ii) the characteristics of the interface between the tungsten foil and the interlayer (wettability or diffusion leading to a solid solution or the formation of intermetallics). From the example of tungsten laminates joined by brazing with (i) an eutectic silver copper brazing filler, (ii) copper, (iii) titanium, and (iv) zirconium, the microstructure will be discussed, with special focus on the interface. Based on our assumptions of the mechanism of the extraordinary ductility of tungsten foil we present three syntheses strategies and make recommendations for the synthesis of high temperature tungsten laminates.

Surface Morphology Transformation Under High-Temperature Annealing of Ge Layers Deposited on Si(100).

Science.gov (United States)

Shklyaev, A A; Latyshev, A V

2016-12-01

We study the surface morphology and chemical composition of SiGe layers after their formation under high-temperature annealing at 800-1100 °C of 30-150 nm Ge layers deposited on Si(100) at 400-500 °C. It is found that the annealing leads to the appearance of the SiGe layers of two types, i.e., porous and continuous. The continuous layers have a smoothened surface morphology and a high concentration of threading dislocations. The porous and continuous layers can coexist. Their formation conditions and the ratio between their areas on the surface depend on the thickness of deposited Ge layers, as well as on the temperature and the annealing time. The data obtained suggest that the porous SiGe layers are formed due to melting of the strained Ge layers and their solidification in the conditions of SiGe dewetting on Si. The porous and dislocation-rich SiGe layers may have properties interesting for applications.

Atomic layer deposition of Al-doped ZnO thin films

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit; Okazaki, Ryuji; Terasaki, Ichiro [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland); Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)

2013-01-15

Atomic layer deposition has been used to fabricate thin films of aluminum-doped ZnO by depositing interspersed layers of ZnO and Al{sub 2}O{sub 3} on borosilicate glass substrates. The growth characteristics of the films have been investigated through x-ray diffraction, x-ray reflection, and x-ray fluorescence measurements, and the efficacy of the Al doping has been evaluated through optical reflectivity and Seebeck coefficient measurements. The Al doping is found to affect the carrier density of ZnO up to a nominal Al dopant content of 5 at. %. At nominal Al doping levels of 10 at. % and higher, the structure of the films is found to be strongly affected by the Al{sub 2}O{sub 3} phase and no further carrier doping of ZnO is observed.

Protective silicon coating for nanodiamonds using atomic layer deposition

International Nuclear Information System (INIS)

Lu, J.; Wang, Y.H.; Zang, J.B.; Li, Y.N.

2007-01-01

Ultrathin silicon coating was deposited on nanodiamonds using atomic layer deposition (ALD) from gaseous monosilane (SiH 4 ). The coating was performed by sequential reaction of SiH 4 saturated adsorption and in situ decomposition. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were utilized to investigate the structural and morphological properties of the coating. Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) were used to compare the thermal stability of nanodiamonds before and after silicon coating. The results confirmed that the deposited cubic phase silicon coating was even and continuous. The protective silicon coating could effectively improve the oxidation resistance of nanodiamonds in air flow, which facilitates the applications of nanodiamonds that are commonly hampered by their poor thermal stability

Protective silicon coating for nanodiamonds using atomic layer deposition

Energy Technology Data Exchange (ETDEWEB)

Lu, J. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China); Wang, Y.H. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China); Zang, J.B. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China) and College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China)]. E-mail: diamondzjb@163.com; Li, Y.N. [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, Hebei 066004 (China); College of Materials Science and Engineering, Yanshan University, Qinhuangdao, Hebei 066004 (China)

2007-01-30

Ultrathin silicon coating was deposited on nanodiamonds using atomic layer deposition (ALD) from gaseous monosilane (SiH{sub 4}). The coating was performed by sequential reaction of SiH{sub 4} saturated adsorption and in situ decomposition. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were utilized to investigate the structural and morphological properties of the coating. Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) were used to compare the thermal stability of nanodiamonds before and after silicon coating. The results confirmed that the deposited cubic phase silicon coating was even and continuous. The protective silicon coating could effectively improve the oxidation resistance of nanodiamonds in air flow, which facilitates the applications of nanodiamonds that are commonly hampered by their poor thermal stability.

Deposition on disordered substrates with precursor layer diffusion

Science.gov (United States)

Filipe, J. A. N.; Rodgers, G. J.; Tavassoli, Z.

1998-09-01

Recently we introduced a one-dimensional accelerated random sequential adsorption process as a model for chemisorption with precursor layer diffusion. In this paper we consider this deposition process on disordered or impure substrates. The problem is solved exactly on both the lattice and continuum and for various impurity distributions. The results are compared with those from the standard random sequential adsorption model.

Growth and characterization of ternary Ni, Mg–Al and Ni–Al layered double hydroxides thin films deposited by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Matei, A.; Ion, V.; Luculescu, C.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., Magurele, 76900 Bucharest (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest (Romania)

2016-09-01

Layered double hydroxides (LDHs) are a class of layered materials consisting of positively charged brucite-like layers and exchangeable interlayer anions. Layered double hydroxides containing a transition metal which undergoes a reversible redox reaction in the useful potential range have been proposed as electrode coating materials due to their properties of charge transport and redox catalysts in basic solutions. Ni–Al,(Ni,Mg)–Al and, as reference, non-electronically conductive Mg–Al double hydroxides thin films were obtained via pulsed laser deposition technique. The thin films were deposited on different substrates (Si, glass) by using a Nd:YAG laser (1064 nm) working at a repetition rate of 10 Hz. X-ray diffraction, Atomic Force Microscopy, Energy Dispersive X-ray spectroscopy, Fourier Transform Infra-Red Spectroscopy, Secondary Ions Mass Spectrometry, Impedance Analyzer and ellipsometry were the techniques used for the as deposited thin films investigation. The optical properties of Ni based LDH thin films and the effect of the Ni amount on the structural, morphological and optical response are evidenced. The optical band gap values, covering a domain between 3.84 eV and 4.38 eV, respond to the Ni overall concentration: the higher Ni amount the lower the band gap value. - Highlights: • Ternary Ni, Mg–Al and Ni–Al layered double hydroxides thin films were deposited. • The effect of the nickel is evidenced. • The possibility to tailor the materials accompanied by an optical response is shown.

Characterization of amorphous yttria layers deposited by aqueous solutions of Y-chelate alkoxides complex

Energy Technology Data Exchange (ETDEWEB)

Kim, Young-Soon, E-mail: kyscjb@i-sunam.com; Lee, Yu-Ri; Kim, Byeong-Joo; Lee, Jae-Hun; Moon, Seung-Hyun; Lee, Hunju

2015-01-15

Highlights: • Economical method for crack-free amorphous yttria layer deposition by dip coating. • Simpler process for planar yttria film as a diffusion barrier and nucleation layer. • Easy control over the film properties with better characteristics. • Easy control over the thickness of the deposited films. • A feasible process that can be easily adopted by HTSCC industries. - Abstract: Crack-free amorphous yttria layers were deposited by dip coating in solutions of different Y-chelate alkoxides complex. Three Y-chelate solutions of different concentrations were prepared using yttrium acetate tetrahydrate, yttrium stearic acid as Y source materials. PEG, diethanolamine were used as chelating agents, while ethanol, methanol and tetradecane were used as solvent. Three different combinations of chelating and solvents were used to prepare solutions for Y{sub 2}O{sub 3} dip coating on SUS, electropolished and non-electropolished Hastelloy C-276 substrates. The thickness of the films was varied by changing the number of dipping cycles. At an optimized condition, the substrate surface roughness (rms) value was reduced from ∼50 nm to ∼1 nm over a 10 × 10 μm{sup 2} area. After Y{sub 2}O{sub 3} deposition, MgO was deposited using ion-beam assisted deposition (IBAD), then LaMnO{sub 3} (LMO) was deposited using sputtering and GdBCO was deposited using reactive co-evaporation by deposition and reaction (RCE-DR). Detailed X-ray study indicates that LMO/MgO/Y{sub 2}O{sub 3} and GdBCO/LMO/MgO/Y{sub 2}O{sub 3} stack films have good out-of-plane and in-plane textures with strong c-axis alignment. The critical current (Ic) of GdBCO/LMO/MgO/Y{sub 2}O{sub 3} multilayer structure varied from 190 to 420 A/cm with different solutions, when measured at 77 K. These results demonstrated that amorphous yttria can be easily deposited by dip coating using Y-chelates complex as a diffusion barrier and nucleation layer.

Preparation and characterization of tungsten-loaded titanium dioxide photocatalyst for enhanced dye degradation

International Nuclear Information System (INIS)

Saepurahman; Abdullah, M.A.; Chong, F.K.

2010-01-01

Tungsten-loaded TiO 2 photocatalyst has been successfully prepared and characterized. TEM analysis showed that the photocatalysts were nanosize with the tungsten species forming layers of coverage on the surface of TiO 2 , but not in clustered form. This was confirmed by XRD and FT-Raman analyses where tungsten species were well dispersed at lower loading ( 3 at higher loadings (>12 mol%). In addition, loading with tungsten could stabilize the anatase phase from transforming into inactive rutile phase and did not shift the optical absorption to the visible region as shown by DRUV-vis analysis. PZC value of TiO 2 was found at 6.4, but the presence of tungsten at 6.5 mol% WO 3 , decreased the PZC value to 3. Tungsten-loaded TiO 2 was superior to unmodified TiO 2 with 2-fold increase in degradation rate of methylene blue, and equally effective for the degradation of different class of dyes such as methyl violet and methyl orange at 1 mol% WO 3 loading.

Effect of deposited tungsten on deuterium accumulation in beryllium in contact with atomic deuterium

Energy Technology Data Exchange (ETDEWEB)

Sharapov, V.M.; Gavrilov, L.E. [Institute of Physical Chemistry, Russian Academy of Sciences, Moscow (Russian Federation); Kulikauskas, V.S.

1998-01-01

Usually ion or plasma beam is used for the experiment with beryllium which simulates the interaction of plasma with first wall in fusion devices. However, the use of thermal or subthermal atoms of hydrogen isotopes seems to be useful for that purpose. Recently, the authors have studied the deuterium accumulation in beryllium in contact with atomic deuterium. The experimental setup is shown, and is explained. By means of elastic recoil detection (ERD) technique, it was shown that in the exposure to D atoms at 740 K, deuterium is distributed deeply into the bulk, and is accumulated up to higher concentration than the case of the exposure to molecular deuterium. The depth and concentration of deuterium distribution depend on the exposure time, and those data are shown. During the exposure to atomic deuterium, oxide film grew on the side of a sample facing plasma. In order to understand the mechanism of deuterium trapping, the experiment was performed using secondary ion mass spectrometry (SIMS) and residual gas analysis (RGA). The influence that the tungsten deposit from the heated cathode exerted to the deuterium accumulation in beryllium in contact with atomic deuterium was investigated. These results are reported. (K.I.)

Covalent assembly of poly(ethyleneimine) via layer-by-layer deposition for enhancing surface density of protein and bacteria attachment

Energy Technology Data Exchange (ETDEWEB)

Xia, Bing, E-mail: xiabing@njfu.edu.cn [Key Laboratory of Forest Genetics and Biotechnology (Ministry of Education of China), Nanjing Forestry University, Nanjing 210037 (China); Advanced Analysis and Testing Center, Nanjing Forestry University, Nanjing 210037 (China); Shi, Jisen; Dong, Chen; Zhang, Wenyi; Lu, Ye [Key Laboratory of Forest Genetics and Biotechnology (Ministry of Education of China), Nanjing Forestry University, Nanjing 210037 (China); Guo, Ping [Nanjing College of Information Technology, Nanjing 210023 (China)

2014-02-15

Covalently assembly of low molecular weight poly(ethyleneimine) was introduced to glass surfaces via glutaraldehyde crosslinking, with focus on its application on protein immobilization or bacteria attachment. Characterizations of Fourier transform infrared spectroscopy and ellipsometry measurement revealed a stepwise growth of poly(ethyleneimine) films by layer-by-layer deposition. After fluorescein isothiocyanate labelling, photoluminescence spectroscopy measurement indicated that the amount of surface accessible amine groups had been gradually enhanced with increasing poly(ethyleneimine) layers deposition. As compared with traditional aminosilanized surfaces, the surface density of amine groups was enhanced by ∼11 times after five layers grafting, which resulted in ∼9-time increasing of surface density of immobilized bovine serum albumin. Finally, these as-prepared PEI multi-films with excellent biocompatibility were adopted as culture substrates to improve Escherichia coli adherence, which showed that their surface density had been increased by ∼251 times.

Optimization of sedimentation of tungsten on copper substrate for production of {sup 186g}Re via {sup 186}W(p,n) nuclear reaction: Feasibility of using high current, long irradiation

Energy Technology Data Exchange (ETDEWEB)

Kakavand, T., E-mail: Tayeb@znu.ac.ir [Department of Physics, Faculty of Science, Imam Khomeini International University, Qazvin (Iran, Islamic Republic of); Mirzaii, M.; Khaleghi, M. [Agricultural, Medical and Industrial Research School, Nuclear Science and Technology Research Institute, AEOI, Karaj (Iran, Islamic Republic of); Eslami, M. [Department of Physics, Faculty of Science, University of Zanjan, Zanjan (Iran, Islamic Republic of)

2016-01-01

Highlights: • Optimization of tungsten sedimentation for bulk production of {sup 186}Re. • Influence of targetry parameters on stress-bearing of the target during proton irradiation. • Activity measurement for {sup 186}Re produced via {sup nat}W(p,xn) reaction. - Abstract: Tungsten is recognized as one of the important metals used in cyclotron targets for production of several vital radioisotopes. Adequate adhesion of the prepared targets to its substrate is a significant parameter that makes them optimized for high current beam collisions. The target morphology should be paid special attention as another important parameter. In this work, a rather thick layer of tungsten is deposited on a copper substrate by sedimentation technique to produce {sup 186g}Re radionuclide via {sup 186}W(p,n) reaction. Consecutive sedimentation experiments are carried out to determine the best suspension solution. The prepared targets are evaluated in morphology by scanning electron microscope. A mixture of 1 g tungsten powder, 250 mg ethyl cellulose and 5 mL acetone is concluded for desirable target adhesion. Irradiation of the targets by 20 μA proton current (15 MeV energy) for 5 h shows that they can withstand the proton beam.

Fluid inclusion characteristics and geological significance of the Dajinshan W-Sn polymetallic deposit in Yunfu, Guangdong Province

Science.gov (United States)

Yu, Zhangfa; Chen, Maohong; Zhao, Haijie

2015-05-01

The Dajinshan tungsten-tin polymetallic deposit is a quartz-vein-type ore deposit located in Western Guangdong Province. The ore bodies show a fairly simple shape and mainly occur as tungsten-tin polymetallic-bearing sulfide quartz veins, including quartz vein, quartz-greisens, and sulfide quartz veins, and their distribution is spatially related to Dajinshan granitoids. The formation of the deposit experienced three stages: a wolframite-molybdenite-quartz stage, a wolframite-cassiterite-sulfide-quartz stage, and a fluorite-calcite-carbonate stage. Based on detailed petrographic observations, we conducted microthermometric and Raman microspectroscopic studies of fluid inclusions formed at different ore-forming stages in the Dajinshan tungsten-tin polymetallic deposit, identifying four dominant types of fluid inclusions: aqueous two-phase inclusions, CO2-bearing inclusions, solid or daughter mineral-bearing inclusions, and gas-rich inclusions. The gas compositions of ore-forming fluids in the Dajinshan tungsten-tin polymetallic deposit are mostly CO2, CH4, and H2O. The hydrogen, oxygen, and sulfur isotopic data imply that the ore-forming fluids in the Dajinshan tungsten-tin polymetallic deposit were mainly derived from magmatic fluids, mixed with meteoric water in the ore-formation process. These results indicate that the fluid mixing and boiling led to the decomposition of the metal complex in ore-forming fluids and ore deposition.

MAPLE deposition of polypyrrole-based composite layers for bone regeneration

Energy Technology Data Exchange (ETDEWEB)

Paun, Irina Alexandra, E-mail: irina.paun@physics.pub.ro [Faculty of Applied Sciences, University Politehnica of Bucharest, RO-060042 (Romania); National Institute for Laser, Plasma and Radiation Physics, Magurele, Bucharest RO-077125 (Romania); Acasandrei, Adriana Maria [Horia Hulubei National Institute for Physics and Nuclear Engineering IFIN-HH, Magurele, Bucharest RO-077125 (Romania); Luculescu, Catalin Romeo, E-mail: catalin.luculescu@inflpr.ro [National Institute for Laser, Plasma and Radiation Physics, Magurele, Bucharest RO-077125 (Romania); Mustaciosu, Cosmin Catalin [Horia Hulubei National Institute for Physics and Nuclear Engineering IFIN-HH, Magurele, Bucharest RO-077125 (Romania); Ion, Valentin [National Institute for Laser, Plasma and Radiation Physics, Magurele, Bucharest RO-077125 (Romania); Mihailescu, Mona; Vasile, Eugenia [Faculty of Applied Sciences, University Politehnica of Bucharest, RO-060042 (Romania); Dinescu, Maria, E-mail: dinescum@nipne.ro [National Institute for Laser, Plasma and Radiation Physics, Magurele, Bucharest RO-077125 (Romania)

2015-12-01

Highlights: • PPy-based composite layers for bone regeneration were produced by MAPLE. • Conductive PPy nanograins were embedded in insulating PLGA and PU matrices. • PLGA was chosen for providing biodegradability and PU for toughness and elasticity. • The layers conductivities reached 10{sup −2} S/cm for PPy loadings of 1:10 weight ratios. • The layers promoted osteoblast viability, proliferation and mineralization. - Abstract: We report on biocompatible, electrically conductive layers of polypyrrole (PPy)-based composites obtained by Matrix Assisted Pulsed Laser Evaporation (MAPLE) for envisioned bone regeneration. In order to preserve the conductivity of the PPy while overcoming its lack of biodegradability and low mechanical resilience, conductive PPy nanograins were embedded in two biocompatible, insulating polymeric matrices, i.e. poly(lactic-co-glycolic)acid (PLGA) and polyurethane (PU). PLGA offers the advantage of full biodegradability into non-toxic products, while PU provides toughness and elasticity. The PPy nanograins formed micro-domains and networks within the PLGA and PU matrices, in a compact spatial arrangement favorable for electrical percolation. The proposed approach allowed us to obtain PPy-based composite layers with biologically meaningful conductivities up to 10{sup −2} S/cm for PPy loadings as low as 1:10 weight ratios. Fluorescent staining and viability assays showed that the MG63 osteoblast-like cells cultured on the PPy-based layers deposited by MAPLE were viable and retained their capacity to proliferate. The performance of the proposed method was demonstrated by quantitative evaluation of the calcium phosphate deposits from the cultured cells, as indicative for cell mineralization. Electrical stimulation using 200 μA currents passing through the PPy-based layers, during a time interval of 4 h, enhanced the osteogenesis in the cultured cells. Despite their lowest conductivity, the PPy/PU layers showed the best

Electrodeposited tungsten-nickel-boron: A replacement for hexavalent chromium

International Nuclear Information System (INIS)

Steffani, C.; Meltzer, M.

1995-04-01

Chromium, deposited from acidic solutions of its hexavalent ion, has been the rule for wear resistant, corrosion resistant coatings for many years. Although chromium coatings are durable, the plating process generates air emissions, effluent rinse waters, and process solutions that are toxic, suspected carcinogens, and a risk to human health and the environment. Tungsten-nickel-boron (W-Ni-B) alloy deposition is a potential substitute for hexavalent chrome. It has excellent wear, corrosion, and mechanical properties and also may be less of an environmental risk. This study examines the electroplating process and deposit properties of W-Ni-B and compares them with those of hexavalent chrome

High-energy, high-rate consolidation of tungsten and tungsten-based composite powders

Energy Technology Data Exchange (ETDEWEB)

Raghunathan, S.K.; Persad, C.; Bourell, D.L.; Marcus, H.L. (Center for Materials Science and Engineering, Univ. of Texas, Austin (USA))

1991-01-20

Tungsten and tungsten-based heavy alloys are well known for their superior mechanical properties at elevated temperatures. However, unalloyed tungsten is difficult to consolidate owing to its very high melting temperature (3683 K). The additions of small amounts of low-melting elements such as iron, nickel, cobalt and copper, facilitate the powder processing of dense heavy alloys at moderate temperatures. Energetic high-current pulses have been used recently for powder consolidation. In this paper, the use of a homopolar generator as a power source to consolidate selected tungsten and tungsten-based alloys is examined. Various materials were consolidated including unalloyed tungsten, W-Nb, W-Ni, and tungsten heavy alloy with boron carbide. The effect of process parameters such as pressure and specific energy input on the consolidation of different alloy systems is described in terms of microstructure and property relationships. (orig.).

Monocrystalline zinc oxide films grown by atomic layer deposition

International Nuclear Information System (INIS)

Wachnicki, L.; Krajewski, T.; Luka, G.; Witkowski, B.; Kowalski, B.; Kopalko, K.; Domagala, J.Z.; Guziewicz, M.; Godlewski, M.; Guziewicz, E.

2010-01-01

In the present work we report on the monocrystalline growth of (00.1) ZnO films on GaN template by the Atomic Layer Deposition technique. The ZnO films were obtained at temperature of 300 o C using dietylzinc (DEZn) as a zinc precursor and deionized water as an oxygen precursor. High resolution X-ray diffraction analysis proves that ZnO layers are monocrystalline with rocking curve FWHM of the 00.2 peak equals to 0.07 o . Low temperature photoluminescence shows a sharp and bright excitonic line with FWHM of 13 meV.

Gas-driven permeation of deuterium through tungsten and tungsten alloys

Energy Technology Data Exchange (ETDEWEB)

Buchenauer, Dean A., E-mail: dabuche@sandia.gov [Sandia National Laboratories, Energy Innovation Department, Livermore, CA 94550 (United States); Karnesky, Richard A. [Sandia National Laboratories, Energy Innovation Department, Livermore, CA 94550 (United States); Fang, Zhigang Zak; Ren, Chai [University of Utah, Department of Metallurgical Engineering, Salt Lake City, UT 84112 (United States); Oya, Yasuhisa [Shizuoka University, Graduate School of Science, Shizuoka (Japan); Otsuka, Teppei [Kyushu University, Department of Advanced Energy Engineering Science, Fukuoka (Japan); Yamauchi, Yuji [Hokkaido University, Third Division of Quantum Science and Engineering, Faculty of Engineering, Sapporo (Japan); Whaley, Josh A. [Sandia National Laboratories, Energy Innovation Department, Livermore, CA 94550 (United States)

2016-11-01

Highlights: • We have designed and performed initial studies on a high temperature gas-driven permeation cell capable of operating at temperatures up to 1150 °C and at pressures between 0.1–1 atm. • Permeation measurements on ITER grade tungsten compare well with past studies by Frauenfelder and Zahkarov in the temperature range from 500 to 1000 °C. • First permeation measurements on Ti dispersoid-strengthened ultra-fine grained tungsten show higher permeation at 500 °C, but very similar permeation with ITER tungsten at 1000 °C. Diffusion along grain boundaries may be playing a role for this type of material. - Abstract: To address the transport and trapping of hydrogen isotopes, several permeation experiments are being pursued at both Sandia National Laboratories (deuterium gas-driven permeation) and Idaho National Laboratories (tritium gas- and plasma-driven tritium permeation). These experiments are in part a collaboration between the US and Japan to study the performance of tungsten at divertor relevant temperatures (PHENIX). Here we report on the development of a high temperature (≤1150 °C) gas-driven permeation cell and initial measurements of deuterium permeation in several types of tungsten: high purity tungsten foil, ITER-grade tungsten (grains oriented through the membrane), and dispersoid-strengthened ultra-fine grain (UFG) tungsten being developed in the US. Experiments were performed at 500–1000 °C and 0.1–1.0 atm D{sub 2} pressure. Permeation through ITER-grade tungsten was similar to earlier W experiments by Frauenfelder (1968–69) and Zaharakov (1973). Data from the UFG alloy indicates marginally higher permeability (< 10×) at lower temperatures, but the permeability converges to that of the ITER tungsten at 1000 °C. The permeation cell uses only ceramic and graphite materials in the hot zone to reduce the possibility for oxidation of the sample membrane. Sealing pressure is applied externally, thereby allowing for elevation

Pt-Al{sub 2}O{sub 3} dual layer atomic layer deposition coating in high aspect ratio nanopores

Energy Technology Data Exchange (ETDEWEB)

Pardon, Gaspard; Gatty, Hithesh K; Stemme, Goeran; Wijngaart, Wouter van der; Roxhed, Niclas [KTH Royal Institute of Technology, School of Electrical Engineering, Micro and Nanosystems, Osquldas Vaeg 10, SE-10044 Stockholm (Sweden)

2013-01-11

Functional nanoporous materials are promising for a number of applications ranging from selective biofiltration to fuel cell electrodes. This work reports the functionalization of nanoporous membranes using atomic layer deposition (ALD). ALD is used to conformally deposit platinum (Pt) and aluminum oxide (Al{sub 2}O{sub 3}) on Pt in nanopores to form a metal-insulator stack inside the nanopore. Deposition of these materials inside nanopores allows the addition of extra functionalities to nanoporous materials such as anodic aluminum oxide (AAO) membranes. Conformal deposition of Pt on such materials enables increased performances for electrochemical sensing applications or fuel cell electrodes. An additional conformal Al{sub 2}O{sub 3} layer on such a Pt film forms a metal-insulator-electrolyte system, enabling field effect control of the nanofluidic properties of the membrane. This opens novel possibilities in electrically controlled biofiltration. In this work, the deposition of these two materials on AAO membranes is investigated theoretically and experimentally. Successful process parameters are proposed for a reliable and cost-effective conformal deposition on high aspect ratio three-dimensional nanostructures. A device consisting of a silicon chip supporting an AAO membrane of 6 mm diameter and 1.3 {mu}m thickness with 80 nm diameter pores is fabricated. The pore diameter is reduced to 40 nm by a conformal deposition of 11 nm Pt and 9 nm Al{sub 2}O{sub 3} using ALD. (paper)

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

Science.gov (United States)

Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

2016-06-09

Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack.

CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina [CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, 38054, Grenoble (France); Levy-Clement, Claude [CNRS, Institut de Chimie et des Materiaux de Paris-Est, 94320, Thiais (France)

2014-09-15

In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl{sub 2} to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl{sub 2} treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

CdTe deposition by successive ionic layer adsorption and reaction (SILAR) technique onto ZnO nanowires

International Nuclear Information System (INIS)

Salazar, Raul; Delamoreanu, Alexandru; Saidi, Bilel; Ivanova, Valentina; Levy-Clement, Claude

2014-01-01

In this study is reported CdTe deposition by Successive Ionic Layer Adsorption and reaction (SILAR) at room temperature onto ZnO nanowires (NWs). The as-deposited CdTe layer exhibits poor crystalline quality and not well defined optical transition which is probably result of its amorphous nature. The implementation of an annealing step and chemical treatment by CdCl 2 to the classical SILAR technique improved significantly the CdTe film quality. The XRD analysis showed that the as treated layers are crystallized in the cubic zinc blende structure. The full coverage of ZnO nanowires and thickness of the CdTe shell, composed of small crystallites, was confirmed by STEM and TEM analysis. The layer thickness could be controlled by the number of SILAR cycles. The sharper optical transitions for the annealed and CdCl 2 treated heterostructures additionally proves the enhancement of the layer crystalline quality. For comparison CdTe was also deposited by close space sublimation (CSS) method onto ZnO nanowires. It is shown that the SILAR deposited CdTe exhibits equal crystalline and optical properties to that prepared by CSS. These results demonstrate that SILAR technique is more suitable for conformal thin film deposition on nanostructures. CdTe extremely thin film deposited by SILAR method onto ZnO nanowire. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

DEFF Research Database (Denmark)

Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

2016-01-01

Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.......Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved....

Giant magneto-impedance effect on nanocrystalline microwires with conductive layer deposit

International Nuclear Information System (INIS)

Wang, R.L.; Zhao, Z.J.; Liu, L.P.; Yuan, W.Z.; Yang, X.L.

2005-01-01

In this study, the giant magneto-impedance effect on Fe-based glass-coated nanocrystalline microwires with and without an additional outer copper layer was investigated. Experiment results showed that the magneto-impedance ratio of the wires with a layer of deposited copper is higher at low frequencies and lower at high frequencies (above 50 MHz), as compared to that of the microwires without an outer copper layer. The peak MI magnetic field, corresponding to the maximum of the magneto-impedance ratio shifts towards higher field values with increasing coating thickness of copper layer. The results are explained in terms of electro-magnetic interactions between the conductive layer and the ferromagnetic core

Low-energy X-ray detection in cryogenic detectors with tungsten thermometers

International Nuclear Information System (INIS)

Colling, P.; Nucciotti, A.; Bucci, C.; Cooper, S.; Ferger, P.; Frank, M.; Nagel, U.; Proebst, F.; Seidel, W.

1994-08-01

In the course of our development of calorimetric particle detectors with superconducting phase transition thermometers, we have succeeded in depositing epitaxial α-tungsten films on sapphire which have critical temperatures T c near 15 mK. To our knowledge this is the first time that the T c of bulk tungsten has been observed in thin films. Such films used as thermometers are very sensitive and provide good energy resolution: with 4 g and 32 g sapphire crystals energy resolutions of better than 100eV (FWHM) for 1.5 KeV X-rays have been achieved. (orig.)

Electrodeposition of metallic tungsten coating from binary oxide molten salt on low activation steel substrate

International Nuclear Information System (INIS)

Liu, Y.H.; Zhang, Y.C.; Jiang, F.; Fu, B.J.; Sun, N.B.

2013-01-01

Tungsten is considered a promising plasma facing armor material for future fusion devices. An electrodeposited metallic tungsten coating from Na 2 WO 4 –WO 3 binary oxide molten salt on low activation steel (LAS) substrate was investigated in this paper. Tungsten coatings were deposited under various pulsed currents conditions at 1173 K in atmosphere. Cathodic current density and pulsed duty cycle were investigated for pulsed current electrolysis. The crystal structure and microstructure of tungsten coatings were characterized by X-ray diffractometry, scanning electron microscopy, and energy X-ray dispersive analysis techniques. The results indicated that pulsed current density and duty cycle significantly influence tungsten nucleation and electro-crystallization phenomena. The average grain size of the coating becomes much larger with increasing cathodic current density, which demonstrates that appropriate high cathodic current density can accelerate the growth of grains on the surface of the substrate. The micro-hardness of tungsten coatings increases with the increasing thickness of coatings; the maximum micro-hardness is 482 HV. The prepared tungsten coatings have a smooth surface, a porosity of less than 1%, and an oxygen content of 0.024 wt%

Electrodeposition of metallic tungsten coating from binary oxide molten salt on low activation steel substrate

Energy Technology Data Exchange (ETDEWEB)

Liu, Y. H. [School of Materials Science and Engineering, University of Science and Technology BeiJing, Beijing (China); State Nuclear Power Research Institute, Xicheng District, Beijing (China); Zhang, Y.C., E-mail: zycustb@163.com [School of Materials Science and Engineering, University of Science and Technology BeiJing, Beijing (China); Jiang, F.; Fu, B. J.; Sun, N. B. [School of Materials Science and Engineering, University of Science and Technology BeiJing, Beijing (China)

2013-11-15

Tungsten is considered a promising plasma facing armor material for future fusion devices. An electrodeposited metallic tungsten coating from Na{sub 2}WO{sub 4}–WO{sub 3} binary oxide molten salt on low activation steel (LAS) substrate was investigated in this paper. Tungsten coatings were deposited under various pulsed currents conditions at 1173 K in atmosphere. Cathodic current density and pulsed duty cycle were investigated for pulsed current electrolysis. The crystal structure and microstructure of tungsten coatings were characterized by X-ray diffractometry, scanning electron microscopy, and energy X-ray dispersive analysis techniques. The results indicated that pulsed current density and duty cycle significantly influence tungsten nucleation and electro-crystallization phenomena. The average grain size of the coating becomes much larger with increasing cathodic current density, which demonstrates that appropriate high cathodic current density can accelerate the growth of grains on the surface of the substrate. The micro-hardness of tungsten coatings increases with the increasing thickness of coatings; the maximum micro-hardness is 482 HV. The prepared tungsten coatings have a smooth surface, a porosity of less than 1%, and an oxygen content of 0.024 wt%.