Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

Energy Technology Data Exchange (ETDEWEB)

Seyidov, MirHasan Yu., E-mail: smirhasan@gyte.edu.tr; Suleymanov, Rauf A.; Mikailzade, Faik A. [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid ave. 33, Baku AZ-1143 (Azerbaijan); Kargın, Elif Orhan [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Odrinsky, Andrei P. [Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov ave. 13, Vitebsk 210717 (Belarus)

2015-06-14

Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles

Use of Isobestic and Isoemission Points in Absorption and Luminescence Spectra for Study of the Transformation of Radiation Defects in Lithium Fluoride

Science.gov (United States)

Voitovich, A. P.; Kalinov, V. S.; Stupak, A. P.; Runets, L. P.

2015-03-01

Isobestic and isoemission points are recorded in the combined absorption and luminescence spectra of two types of radiation defects involved in complex processes consisting of several simultaneous parallel and sequential reactions. These points are observed if a constant sum of two terms, each formed by the product of the concentration of the corresponding defect and a characteristic integral coefficient associated with it, is conserved. The complicated processes involved in the transformation of radiation defects in lithium fluoride are studied using these points. It is found that the ratio of the changes in the concentrations of one of the components and the reaction product remains constant in the course of several simultaneous reactions.

Surface defect assisted broad spectra emission from CdSe quantum dots for white LED application

Science.gov (United States)

Samuel, Boni; Mathew, S.; Anand, V. R.; Correya, Adrine Antony; Nampoori, V. P. N.; Mujeeb, A.

2018-02-01

This paper reports, broadband photoluminescence from CdSe quantum dots (QDs) under the excitation of 403 nm using fluorimeter and 403 nm CW laser excitation. The broad spectrum obtained from the colloidal quantum dots was ranges from 450 nm to 800 nm. The broadness of the spectra was attributed to the merging of band edge and defect driven emissions from the QDs. Six different sizes of particles were prepared via kinetic growth method by using CdO and elemental Se as sources of Cd and Se respectively. The particle sizes were measured from TEM images. The size dependent effect on broad emission was also studied and the defect state emission was found to be predominant in very small QDs. The defect driven emission was also observed to be redshifted, similar to the band edge emission, due to quantum confinement effect. The emission corresponding to different laser power was also studied and a linear relation was obtained. In order to study the colour characteristics of the emission, CIE chromaticity coordinate, CRI and CCT of the prepared samples were measured. It is observed that, these values were tunable by the addition of suitable intensity of blue light from the excitation source to yield white light of various colour temperatures. The broad photoluminescence spectrum of the QDs, were compared with that of a commercially available white LED. It was found that the prepared QDs are good alternatives for the phosphor in phosphor converted white LEDs, to provide good spectral tunability.

New Fe i Level Energies and Line Identifications from Stellar Spectra. II. Initial Results from New Ultraviolet Spectra of Metal-poor Stars

Energy Technology Data Exchange (ETDEWEB)

Peterson, Ruth C. [SETI Institute and Astrophysical Advances, 607 Marion Place, Palo Alto, CA 94301 (United States); Kurucz, Robert L. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Ayres, Thomas R., E-mail: peterson@ucolick.org [Center for Astrophysics and Space Astronomy, University of Colorado, 389 UCB, Boulder, CO 80309-0389 (United States)

2017-04-01

The Fe i spectrum is critical to many areas of astrophysics, yet many of the high-lying levels remain uncharacterized. To remedy this deficiency, Peterson and Kurucz identified Fe i lines in archival ultraviolet and optical spectra of metal-poor stars, whose warm temperatures favor moderate Fe i excitation. Sixty-five new levels were recovered, with 1500 detectable lines, including several bound levels in the ionization continuum of Fe i. Here, we extend the previous work by identifying 59 additional levels, with 1400 detectable lines, by incorporating new high-resolution UV spectra of warm metal-poor stars recently obtained by the Hubble Space Telescope Imaging Spectrograph. We provide gf values for these transitions, both computed as well as adjusted to fit the stellar spectra. We also expand our spectral calculations to the infrared, confirming three levels by matching high-quality spectra of the Sun and two cool stars in the H -band. The predicted gf values suggest that an additional 3700 Fe i lines should be detectable in existing solar infrared spectra. Extending the empirical line identification work to the infrared would help confirm additional Fe i levels, as would new high-resolution UV spectra of metal-poor turnoff stars below 1900 Å.

Theoretical studies on core-level spectra of solids

International Nuclear Information System (INIS)

Kotani, Akio

1995-01-01

I present a review on theoretical studies of core-level spectra (CLS) in solids. In CLS, the dynamical response of outer electrons to a core hole is reflected through the screening of core hole potential. Impurity Anderson model (IAM) or cluster model is successfully applied to the analysis of X-ray photoemission spectra (XPS) and X-ray absorption spectra (XAS) in f and d electron systems, where the f and d electron states are hybridized with the other valence or conduction electron states. The effect of the core-hole potential in the final state of XPS and XAS plays an important role, as well as the solid state hybridization and intra-atomic multiplet coupling effects. As typical examples, the calculated results for XPS of rare-earth compounds and transition metal compounds are shown, and some discussions are given. As a subject of remarkable progress with high brightness synchrotron radiation sources, I discuss some theoretical aspects of X-ray emission spectra (XES) and their resonant enhancement at the X-ray absorption threshold. Some experimental data and their theoretical analysis are also given. (author)

Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

Energy Technology Data Exchange (ETDEWEB)

Drummond, T.J.

1999-03-11

Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

Inter-Series Interactions on the Atomic Photoionization Spectra Studied by the Phase-Shifted Multichannel-Quantum Defect Theory

Directory of Open Access Journals (Sweden)

Chun-Woo Lee

2017-05-01

Full Text Available Development in mathematical formulations of parameterizing the resonance structures using the phase-shifted multichannel quantum defect theory (MQDT and their use in analyzing the effect of inter-series interactions on the autoionizing Rydberg spectra is reviewed. Reformulation of the short-range scattering matrix into the form analogous to S = SBSR in scattering theory are the crucial step in this development. Formulation adopts different directions and goals depending on whether autoionizing series converge to the same limit (degenerate or to different limits (nondegenerate because of the different nature of the perturbation. For the nondegenerate case, finding the simplest form of profile index functions of the autoionizing spectra with the minimal number of parameters is the main goal and some results are reviewed. For the degenerate case where perturbation acts uniformly throughout the entire series, isolation of the overlapped autoionizing series into the unperturbed autoionizing series is the key objective in research and some results in that direction are reviewed.

Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

Science.gov (United States)

Peaker, A. R.; Markevich, V. P.; Coutinho, J.

2018-04-01

The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for characterizing deep-level defects in semiconductors and present some of the early work on which the principles of today's methodology are based. We outline ab-initio calculations of defect properties and give examples of how density functional theory in conjunction with formation energy and marker methods can be used to guide the interpretation of experimental results. We review recombination, generation, and trapping of charge carriers associated with defects. We consider thermally driven emission and capture and describe the techniques of Deep Level Transient Spectroscopy (DLTS), high resolution Laplace DLTS, admittance spectroscopy, and scanning DLTS. For the study of minority carrier related processes and wide gap materials, we consider Minority Carrier Transient Spectroscopy (MCTS), Optical DLTS, and deep level optical transient spectroscopy together with some of their many variants. Capacitance, current, and conductance measurements enable carrier exchange processes associated with the defects to be detected. We explain how these methods are used in order to understand the behaviour of point defects and the determination of charge states and negative-U (Hubbard correlation energy) behaviour. We provide, or reference, examples from a wide range of materials including Si, SiGe, GaAs, GaP, GaN, InGaN, InAlN, and ZnO.

Multiple-level defect species evaluation from average carrier decay

Science.gov (United States)

Debuf, Didier

2003-10-01

An expression for the average decay is determined by solving the the carrier continuity equations, which include terms for multiple defect recombination. This expression is the decay measured by techniques such as the contactless photoconductance decay method, which determines the average or volume integrated decay. Implicit in the above is the requirement for good surface passivation such that only bulk properties are observed. A proposed experimental configuration is given to achieve the intended goal of an assessment of the type of defect in an n-type Czochralski-grown silicon semiconductor with an unusually high relative lifetime. The high lifetime is explained in terms of a ground excited state multiple-level defect system. Also, minority carrier trapping is investigated.

Core Level Spectra of Organic Molecules Adsorbed on Graphene

Directory of Open Access Journals (Sweden)

Abhilash Ravikumar

2018-03-01

Full Text Available We perform first principle calculations based on density functional theory to investigate the effect of the adsorption of core-excited organic molecules on graphene. We simulate Near Edge X-ray absorption Fine Structure (NEXAFS and X-ray Photoemission Spectroscopy (XPS at the N and C edges for two moieties: pyridine and the pyridine radical on graphene, which exemplify two different adsorption characters. The modifications of molecular and graphene energy levels due to their interplay with the core-level excitation are discussed. We find that upon physisorption of pyridine, the binding energies of graphene close to the adsorption site reduce mildly, and the NEXAFS spectra of the molecule and graphene resemble those of gas phase pyridine and pristine graphene, respectively. However, the chemisorption of the pyridine radical is found to significantly alter these core excited spectra. The C 1s binding energy of the C atom of graphene participating in chemisorption increases by ∼1 eV, and the C atoms of graphene alternate to the adsorption site show a reduction in the binding energy. Analogously, these C atoms also show strong modifications in the NEXAFS spectra. The NEXAFS spectrum of the chemisorbed molecule is also modified as a result of hybridization with and screening by graphene. We eventually explore the electronic properties and magnetism of the system as a core-level excitation is adiabatically switched on.

Relationship between defect density and charge carrier transport in amorphous and microcrystalline silicon

International Nuclear Information System (INIS)

Astakhov, Oleksandr; Carius, Reinhard; Finger, Friedhelm; Petrusenko, Yuri; Borysenko, Valery; Barankov, Dmytro

2009-01-01

The influence of dangling-bond defects and the position of the Fermi level on the charge carrier transport properties in undoped and phosphorous doped thin-film silicon with structure compositions all the way from highly crystalline to amorphous is investigated. The dangling-bond density is varied reproducibly over several orders of magnitude by electron bombardment and subsequent annealing. The defects are investigated by electron-spin-resonance and photoconductivity spectroscopies. Comparing intrinsic amorphous and microcrystalline silicon, it is found that the relationship between defect density and photoconductivity is different in both undoped materials, while a similar strong influence of the position of the Fermi level on photoconductivity via the charge carrier lifetime is found in the doped materials. The latter allows a quantitative determination of the value of the transport gap energy in microcrystalline silicon. The photoconductivity in intrinsic microcrystalline silicon is, on one hand, considerably less affected by the bombardment but, on the other hand, does not generally recover with annealing of the defects and is independent from the spin density which itself can be annealed back to the as-deposited level. For amorphous silicon and material prepared close to the crystalline growth regime, the results for nonequilibrium transport fit perfectly to a recombination model based on direct capture into neutral dangling bonds over a wide range of defect densities. For the heterogeneous microcrystalline silicon, this model fails completely. The application of photoconductivity spectroscopy in the constant photocurrent mode (CPM) is explored for the entire structure composition range over a wide variation in defect densities. For amorphous silicon previously reported linear correlation between the spin density and the subgap absorption is confirmed for defect densities below 10 18 cm -3 . Beyond this defect level, a sublinear relation is found i.e., not

Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

International Nuclear Information System (INIS)

Walukiewicz, W.

1988-02-01

The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

Tailoring defect structure and optical absorption of porous anodic aluminum oxide membranes

International Nuclear Information System (INIS)

Yan Hongdan; Lemmens, Peter; Wulferding, Dirk; Shi, Jianmin; Becker, Klaus Dieter; Lin, Chengtian; Lak, Aidin; Schilling, Meinhard

2012-01-01

Defects influence the optical and electronic properties of nanostructured materials that may be relevant for applications. In self-organized anodic aluminum oxide (AAO) templates we have investigated the effect of annealing, doping and nanoscale metal deposition. Optical absorption spectroscopy has been used as a sensitive probe for the defect density in AAO templates. The electronic spectra are found to be dominated by bands which originate from oxygen-deficient color centers (F + , F and F 2 ). In annealing studies, the integrated absorption of the bands changes non-monotonically with annealing temperature and annealing time. This demonstrates that the concentration of defects can be optimized to tailor the optical properties of the AAO. Metallic Au wires are deposited in the template to establish a plasmonic template or array. The investigations provide an interesting insight into the interplay of reactivity and diffusivity on nanoscales. - Highlights: ► Preparation of metal wire arrays in oxide templates with tailored plasmonic properties. ► Oxygen defects are characterized using optical absorption and fluorescence. ► Optical absorption spectra are assigned to energy levels of oxygen vacancies (color centers). ► Annealing and electrodeposition of Au wires minimize defects maintaining the morphology.

Characterization of point defects in monolayer arsenene

Science.gov (United States)

Liang, Xiongyi; Ng, Siu-Pang; Ding, Ning; Wu, Chi-Man Lawrence

2018-06-01

Topological defects that are inevitably found in 2D materials can dramatically affect their properties. Using density functional theory (DFT) calculations and ab initio molecular dynamics (AIMD) method, the structural, thermodynamic, electronic and magnetic properties of six types of typical point defects in arsenene, i.e. the Stone-Wales defect, single and double vacancies and adatoms, were systemically studied. It was found that these defects were all more easily generated in arsenene with lower formation energies than those with graphene and silicene. Stone-Wales defects can be transformed from pristine arsenene by overcoming a barrier of 2.19 eV and single vacancy defects tend to coalesce into double vacancy defects by diffusion. However, a type of adatom defect does not exhibit kinetic stability at room temperature. In addition, SV defects and another type of adatom defect can remarkably affect the electronic and magnetic properties of arsenene, e.g. they can introduce localized states near the Fermi level, as well as a strongly local magnetic moment due to dangling bond and unpaired electron. Furthermore, the simulated scanning tunneling microscopy (STM) and Raman spectroscopy were computed and the types of point defects can be fully characterized by correlating the STM images and Raman spectra to the defective atomistic structures. The results provide significant insights to the effect of defects in arsenene for potential applications, as well as identifications of two helpful tools (STM and Raman spectroscopy) to distinguish the type of defects in arsenene for future experiments.

Defective pyrite (100) surface: An ab initio study

International Nuclear Information System (INIS)

Stirling, Andras; Bernasconi, Marco; Parrinello, Michele

2007-01-01

The structural and electronic properties of sulfur monomeric defects at the FeS 2 (100) surface have been studied by periodic density-functional calculations. We have shown that for a monomeric sulfur bound to an originally fivefold coordinated surface Fe site, the defect core features a triplet electronic ground state with unpaired spins localized on the exposed Fe-S unit. At this site, the iron and sulfur ions have oxidation states +4 and -2, respectively. This defect can be seen as produced via heterolytic bond breaking of the S-S sulfur dimer followed by a Fe-S redox reaction. The calculated sulfur 2p core-level shifts of the monomeric defects are in good agreement with experimental photoemission spectra, which allow a compelling assignment of the different spectroscopic features. The effect of water on the stability of the defective surface has also been studied, and it has been shown that the triplet state is stable against the wetting of the surface. The most important implications of the presence of the monomeric sulfur defect on the reactivity are also discussed

Extraction of level density and γ strength function from primary γ spectra

International Nuclear Information System (INIS)

Schiller, A.; Bergholt, L.; Guttormsen, M.; Melby, E.; Rekstad, J.; Siem, S.

2000-01-01

We present a new iterative procedure to extract the level density and the γ strength function from primary γ spectra for energies close up to the neutron binding energy. The procedure is tested on simulated spectra and on data from the 173 Yb( 3 He,α) 172 Yb reaction

Disorder and defect formation mechanisms in molecular-beam-epitaxy grown silicon epilayers

International Nuclear Information System (INIS)

Akbari-Sharbaf, Arash; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Fanchini, Giovanni

2013-01-01

We investigate the role of disorder, stress and crystallite size in determining the density of defects in disordered and partially ordered silicon thin films deposited at low or moderate temperatures by molecular beam epitaxy. We find that the paramagnetic defect density measured by electron spin resonance (ESR) is strongly dependent on the growth temperature of the films, decreasing from ∼ 2 · 10 19 cm −3 at 98 °C to ∼ 1 · 10 18 cm −3 at 572 °C. The physical nature of the defects is strongly dependent on the range of order in the films: ESR spectra consistent with dangling bonds in an amorphous phase are observed at the lowest temperatures, while the ESR signal gradually becomes more anisotropic as medium-range order improves and the stress level (measured both by X-ray diffraction and Raman spectroscopy) is released in more crystalline films. Anisotropic ESR spectra consistent with paramagnetic defects embedded in an epitaxial phase are observed at the highest growth temperature (572 °C). - Highlights: ► Disordered Si epilayers were grown by molecular beam epitaxy. ► Growth has been carried out at temperatures T = 98 °C–514 °C. ► A correlation between defect density and disorder in the films has been found. ► Lack of medium range order and stress cause the formation of defects at low T. ► At high T, defects are associated to grain boundaries and oriented stacking faults

Irradiation induced defects containing oxygen atoms in germanium crystal as studied by deep level transient spectroscopy

International Nuclear Information System (INIS)

Fukuoka, Noboru; Kambe, Yoshiyuki; Saito, Haruo; Matsuda, Koji.

1984-05-01

Deep level transient spectroscopy was applied to the electron trapping levels which are associated with the irradiation induced lattice defects in germanium crystals. The germanium crystals used in the study were doped with oxygen, antimony or arsenic and the defects were formed by electron irradiation of 1.5MeV or 10MeV. The nature of so called ''thermal defect'' formed by heat treatment at about 670K was also studied. The trapping levels at Esub(c)-0.13eV, Esub(c)-0.25eV and Esub(c)-0.29eV were found to be associated with defects containing oxygen atoms. From the experimental results the Esub(c)-0.25eV level was attributed to the germanium A-center (interstitial oxygen atom-vacancy pair). Another defect associated with the 715cm -1 infrared absorption band was found to have a trapping level at the same position at Esub(c)-0.25eV. The Esub(c)-0.23eV and Esub(c)-0.1eV levels were revealed to be associated with thermal donors formed by heat treatment at about 670K. Additional two peaks (levels) were observed in the DLTS spectrum. The annealing behavior of the levels suggests that the thermal donors originate from not a single type but several types of defects. (author)

Study of defects and vacancies in structural properties of Mn, co-doped oxides: ZnO

Science.gov (United States)

Kumar, Harish; Kaushik, A.; Alvi, P. A.; Dalela, B.; Dalela, S.

2018-05-01

The paper deals with the Structural properties on Mn, Co doped oxides ZnO samples using XRD, Positron Annihilation Lifetime (PAL) Spectra and Raman Spectra. The Mn, Co doped ZnO samples crystallize in a wurtzite structure without any impurity phases in XRD Spectra. The defect state of these samples has been investigated by using positron annihilation lifetime (PAL) spectroscopy technique in which all the relevant lifetime parameters are measured for all the spectra. The results are explained in the direction of doping concentration in these samples in terms of defects structure on Zn lattice site VZn and oxygen defects Vo.

Changes in Serum Natriuretic Peptide Levels after Percutaneous Closure of Small to Moderate Ventricular Septal Defects

Directory of Open Access Journals (Sweden)

Yuksel Kaya

2012-01-01

Full Text Available Background. B-type natriuretic peptide has been shown to be a very sensitive and specific marker of heart failure. In this study, we aimed to investigate the effect of percutaneous closure of ventricular septal defects with Amplatzer septal occluders on brain natriuretic peptide levels. Methods. Between 2008 and 2011, 23 patients underwent successfully percutaneous ventricular septal defect closure in 4 cardiology centers. Brain natriuretic peptide levels were measured in nine patients (4 male, mean ages were 25.3±14.3 who underwent percutaneous closure with Amplatzer occluders for membranous or muscular ventricular septal defects were enrolled in the study. Brain natriuretic peptide levels were measured one day before and one month after the closure. Patients were evaluated clinically and by echocardiography one month after the procedure. Results. Percutaneous closures of ventricular septal defects were successfully performed in all patients. There was not any significant adverse event in patients group during followup. Decrease in brain natriuretic peptide levels after closure were statistically significant (97.3±78.6 versus 26.8±15.6, =0.013. Conclusion. Brain Natriuretic Peptide levels are elevated in patients with ventricular septal defects as compared to controls. Percutaneous closure of Ventricular Septal Defect with Amplatzer occluders decreases the BNP levels.

[The NIR spectra based variety discrimination for single soybean seed].

Science.gov (United States)

Zhu, Da-Zhou; Wang, Kun; Zhou, Guang-Hua; Hou, Rui-Feng; Wang, Cheng

2010-12-01

With the development of soybean producing and processing, the quality breeding becomes more and more important for soybean breeders. Traditional sampling detection methods for soybean quality need to destroy the seed, and does not satisfy the requirement of earlier generation materials sieving for breeding. Near infrared (NIR) spectroscopy has been widely used for soybean quality detection. However, all these applications were referred to mass samples, and they were not suitable for little or single seed detection in breeding procedure. In the present study, the acousto--optic tunable filter (AOTF) NIR spectroscopy was used to measure the single soybean seed. Two varieties of soybean were measured, which contained 60 KENJIANDOU43 seeds and 60 ZHONGHUANG13 seeds. The results showed that NIR spectra combined with soft independent modeling of class analogy (SIMCA) could accurately discriminate the soybean varieties. The classification accuracy for KENJIANDOU43 seeds and ZHONGHUANG13 was 100%. The spectra of single soybean seed were measured at different positions, and it showed that the seed shape has significant influence on the measurement of spectra, therefore, the key point for single seed measurement was how to accurately acquire the spectra and keep their representativeness. The spectra for soybeans with glossy surface had high repeatability, while the spectra of seeds with external defects had significant difference for several measurements. For the fast sieving of earlier generation materials in breeding, one could firstly eliminate the seeds with external defects, then apply NIR spectra for internal quality detection, and in this way the influence of seed shape and external defects could be reduced.

Effect of ion indium implantation on InP photoluminescence spectra

International Nuclear Information System (INIS)

Pyshnaya, N.B.; Radautsan, S.I.; Tiginyanu, I.M.; Ursaki, V.V.

1988-01-01

Photoluminescence spectra of indium phosphide single crystals implanted by indium after annealing under the protective Al 2 O 3 film in a nitrogen flow are investigated. As a result of implantation and annealing in photoluminescence spectra of crystals there appeared a new band with the maximum at 1.305 eV (T=6 K) which is connected with the free electron transition at the level of the antistructure defect of In p - lying by 0.115 eV above the valent zone ceiling. With large doses of the implanted indium in the photoluminescence spectrum a long-wave band with the maximum at 0.98-0.99 eV is also observed caused, apparently, by the strong lattice disorder

Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se{sub 2} based thin films

Energy Technology Data Exchange (ETDEWEB)

Lee, D.W.; Seol, M.S.; Kwak, D.W.; Oh, J.S. [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of); Jeong, J.H. [Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of)

2012-08-01

Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se{sub 2} (CIGS) based thin films for solar cell were investigated. CIGS films with a thickness of 3 {mu}m were grown on a soda-lime glass substrate by a co-evaporation method, and then were implanted with protons. To study deep level defects in the proton implanted CIGS films, deep level transient spectroscopy measurements on the CIGS-based solar cells were carried out, these measurements found 6 traps (including 3 hole traps and 3 electron traps). In the proton implanted CIGS films, the deep level defects, which are attributed to the recombination centers of the CIGS solar cell, were significantly reduced in intensity, while a deep level defect was generated around 0.28 eV above the valence band maximum. Therefore, we suggest that most deep level defects in CIGS films can be controlled by hydrogen effects. - Highlights: Black-Right-Pointing-Pointer Proton implanted Cu(In,Ga)Se{sub 2} thin film and solar cell are prepared. Black-Right-Pointing-Pointer Deep level defects of Cu(In,Ga)Se{sub 2} thin film and solar cell are investigated. Black-Right-Pointing-Pointer Hydrogenation using proton implantation and H{sub 2} annealing reduces deep level defects. Black-Right-Pointing-Pointer Hydrogenation could enhance electrical properties and efficiency of solar cells.

DLTS and capacitance transients study of defects induced by neutron irradiation in MOS structures CCD process

International Nuclear Information System (INIS)

Ahaitouf, A.; Losson, E.; Charles, J.P.

1999-01-01

The aim of this paper is to study neutron irradiation effects on PMOS capacitors and NMOSFETs transistors. The characterization of induced defects was made by capacitance transients C(t) measurements, DLTS spectroscopy, and optical DLTS (ODLTS). DLTS spectra present three peaks due to deep levels created in the semiconductor and two peaks due to minority carrier generation. Two levels are reported in the literature. Two other minority carrier traps have been observed on ODLTS spectra after irradiation. This can explain the decrease of the minority carrier generation lifetime observed by capacitance transients measurements. (authors)

Electron scattering in graphene by defects in underlying h-BN layer: First-principles transport calculations

Science.gov (United States)

Kaneko, Tomoaki; Ohno, Takahisa

2018-03-01

We investigate the electronic structure and the transport properties of graphene adsorbed onto h-BN with carbon impurities or atomic vacancies using density functional theory and the non-equilibrium Green's function method. We find that the transport properties are degraded due to carrier doping and scattering off of localized defect states in h-BN. When graphene is doped by introducing defects in h-BN, the transmission spectra become asymmetric owing to the reduction of the electronic density of states, which contributes significantly to the degradation of graphene transport properties as compared with the effect of defect levels.

Leveling coatings for reducing the atomic oxygen defect density in protected graphite fiber epoxy composites

Science.gov (United States)

Jaworske, D. A.; Degroh, Kim K.; Podojil, G.; McCollum, T.; Anzic, J.

1992-11-01

Pinholes or other defect sites in a protective oxide coating provide pathways for atomic oxygen in low Earth orbit to reach underlying material. One concept of enhancing the lifetime of materials in low Earth orbit is to apply a leveling coating to the material prior to applying any reflective and protective coatings. Using a surface tension leveling coating concept, a low viscosity epoxy was applied to the surface of several composite coupons. A protective layer of 1000 A of SiO2 was deposited on top of the leveling coating, and the coupons were exposed to an atomic oxygen environment in a plasma asher. Pinhole populations per unit area were estimated by counting the number of undercut sites observed by scanning electron microscopy. Defect density values of 180,000 defects/sq cm were reduced to about 1000 defects/sq cm as a result of the applied leveling coating. These improvements occur at a mass penalty of about 2.5 mg/sq cm.

GRABGAM Analysis of Ultra-Low-Level HPGe Gamma Spectra

International Nuclear Information System (INIS)

Winn, W.G.

1999-01-01

The GRABGAM code has been used successfully for ultra-low level HPGe gamma spectrometry analysis since its development in 1985 at Savannah River Technology Center (SRTC). Although numerous gamma analysis codes existed at that time, reviews of institutional and commercial codes indicated that none addressed all features that were desired by SRTC. Furthermore, it was recognized that development of an in-house code would better facilitate future evolution of the code to address SRTC needs based on experience with low-level spectra. GRABGAM derives its name from Gamma Ray Analysis BASIC Generated At MCA/PC

GRABGAM Analysis of Ultra-Low-Level HPGe Gamma Spectra

Energy Technology Data Exchange (ETDEWEB)

Winn, W.G.

1999-07-28

The GRABGAM code has been used successfully for ultra-low level HPGe gamma spectrometry analysis since its development in 1985 at Savannah River Technology Center (SRTC). Although numerous gamma analysis codes existed at that time, reviews of institutional and commercial codes indicated that none addressed all features that were desired by SRTC. Furthermore, it was recognized that development of an in-house code would better facilitate future evolution of the code to address SRTC needs based on experience with low-level spectra. GRABGAM derives its name from Gamma Ray Analysis BASIC Generated At MCA/PC.

Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

International Nuclear Information System (INIS)

Kwak, D.W.; Lee, D.W.; Oh, J.S.; Lee, Y.H.; Cho, H.Y.

2012-01-01

SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10 −17 cm 2 , two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10 −14 cm 2 and 0.96 × 10 −15 cm 2 , respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H + ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers. - Highlights: ► We have fabricated low-defective SiGe-on-Insulator (SGOI) with implantation method. ► H + and He + -ions are used for ion-implantation method. ► We have investigated the deep level defects of SGOI layers. ► Ge condensation method using H + ion implantation could reduce extended defects. ► They could enhance electrical properties.

Simulation of electron energy loss spectra of nanomaterials with linear-scaling density functional theory

International Nuclear Information System (INIS)

Tait, E W; Payne, M C; Ratcliff, L E; Haynes, P D; Hine, N D M

2016-01-01

Experimental techniques for electron energy loss spectroscopy (EELS) combine high energy resolution with high spatial resolution. They are therefore powerful tools for investigating the local electronic structure of complex systems such as nanostructures, interfaces and even individual defects. Interpretation of experimental electron energy loss spectra is often challenging and can require theoretical modelling of candidate structures, which themselves may be large and complex, beyond the capabilities of traditional cubic-scaling density functional theory. In this work, we present functionality to compute electron energy loss spectra within the onetep linear-scaling density functional theory code. We first demonstrate that simulated spectra agree with those computed using conventional plane wave pseudopotential methods to a high degree of precision. The ability of onetep to tackle large problems is then exploited to investigate convergence of spectra with respect to supercell size. Finally, we apply the novel functionality to a study of the electron energy loss spectra of defects on the (1 0 1) surface of an anatase slab and determine concentrations of defects which might be experimentally detectable. (paper)

Association between risk of birth defects occurring level and arsenic concentrations in soils of Lvliang, Shanxi province of China

International Nuclear Information System (INIS)

Wu, Jilei; Zhang, Chaosheng; Pei, Lijun; Chen, Gong; Zheng, Xiaoying

2014-01-01

The risk of birth defects is generally accredited with genetic factors, environmental causes, but the contribution of environmental factors to birth defects is still inconclusive. With the hypothesis of associations of geochemical features distribution and birth defects risk, we collected birth records and measured the chemical components in soil samples from a high prevalence area of birth defects in Shanxi province, China. The relative risk levels among villages were estimated with conditional spatial autoregressive model and the relationships between the risk levels of the villages and the 15 types of chemical elements concentration in the cropland and woodland soils were explored. The results revealed that the arsenic levels in cropland soil showed a significant association with birth defects occurring risk in this area, which is consistent with existing evidences of arsenic as a teratogen and warrants further investigation on arsenic exposure routine to birth defect occurring risk. - Highlights: • Association between soil geochemical components and birth defects risk was proposed. • The relative risk difference among villages were estimated with CAR model. • Arsenic levels in cropland showed a significant association to birth defect risk. • The finding warrants further investigation on arsenic as a teratogen. - The difference of risk levels estimate by spatial statistics to birth defect significantly associated with arsenic levels in cropland soils warrants further investigation

The Correlation Between Dislocations and Vacancy Defects Using Positron Annihilation Spectroscopy

Science.gov (United States)

Pang, Jinbiao; Li, Hui; Zhou, Kai; Wang, Zhu

2012-07-01

An analysis program for positron annihilation lifetime spectra is only applicable to isolated defects, but is of no use in the presence of defective correlations. Such limitations have long caused problems for positron researchers in their studies of complicated defective systems. In order to solve this problem, we aim to take a semiconductor material, for example, to achieve a credible average lifetime of single crystal silicon under plastic deformation at different temperatures using positron life time spectroscopy. By establishing reasonable positron trapping models with defective correlations and sorting out four lifetime components with multiple parameters, as well as their respective intensities, information is obtained on the positron trapping centers, such as the positron trapping rates of defects, the density of the dislocation lines and correlation between the dislocation lines, and the vacancy defects, by fitting with the average lifetime with the aid of Matlab software. These results give strong grounds for the existence of dislocation-vacancy correlation in plastically deformed silicon, and lay a theoretical foundation for the analysis of positron lifetime spectra when the positron trapping model involves dislocation-related defects.

Behavior of deep level defects on voltage-induced stress of Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Lee, D.W.; Cho, S.E. [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of); Jeong, J.H. [Solar Cell Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of)

2015-05-01

The behavior of deep level defects by a voltage-induced stress for CuInGaSe{sub 2} (CIGS) solar cells has been investigated. CIGS solar cells were used with standard structures which are Al-doped ZnO/i-ZnO/CdS/CIGSe{sub 2}/Mo on soda lime glass, and that resulted in conversion efficiencies as high as 16%. The samples with the same structure were isothermally stressed at 100 °C under the reverse voltages. The voltage-induced stressing in CIGS samples causes a decrease in the carrier density and conversion efficiency. To investigate the behavior of deep level defects in the stressed CIGS cells, photo-induced current transient spectroscopy was utilized, and normally 3 deep level defects (including 2 hole traps and 1 electron trap) were found to be located at 0.18 eV and 0.29 eV above the valence band maximum (and 0.36 eV below the conduction band). In voltage-induced cells, especially, it was found that the decrease of the hole carrier density could be responsible for the increase of the 0.29 eV defect, which is known to be observed in less efficient CIGS solar cells. And the carrier density and the defects are reversible at least to a large extent by resting at room-temperature without the bias voltage. From optical capture kinetics in photo-induced current transient spectroscopy measurement, the types of defects could be distinguished into the isolated point defect and the extended defect. In this work, it is suggested that the increase of the 0.29 eV defect by voltage-induced stress could be due to electrical activation accompanied by a loss of positive ion species and the activated defect gives rise to reduction of the carrier density. - Highlights: • We investigated behavior of deep level defects by voltage-induced stress. • Defect generation could affect the decrease of the conversion efficiency of cells. • Defect generation could be electrically activated by a loss of positive ion species. • Type of defects could be studied with models of point defects

Effect of thallium-201 blood levels on reversible myocardial defects

International Nuclear Information System (INIS)

Nelson, C.W.; Wilson, R.A.; Angello, D.A.; Palac, R.T.

1989-01-01

To determine if 201 Tl plasma blood levels correlate with the presence of reversible myocardial defects during exercise testing, 14 patients with stable coronary artery disease underwent two separate exercise 201 Tl stress tests. Between initial and delayed imaging, on one test the patients drank an instant breakfast drink (eating) and on the other they drank an equivalent volume of water as a control (H 2 O). Thallium-201 imaging was performed immediately postexercise, immediately after eating/H 2 O and 210 min after eating/H 2 O. Between initial and immediate post eating/H 2 O images 201Tl reversible defects occurred in 27/38 regions in the H 2 O test versus 15/38 regions in the eating test (p = 0.02). Over this early time period, plasma 201 Tl activity was significantly higher in the H 2 O test than eating test (p less than 0.05). In conclusion, early reversal of 201 Tl defects may, in part, be the result of higher plasma 201 Tl activity early after initial postexercise 201 Tl imaging

Highly Efficient Defect Emission from ZnO:Zn and ZnO:S Powders

Science.gov (United States)

Everitt, Henry

2013-03-01

Bulk Zinc Oxide (ZnO) is a wide band gap semiconductor with an ultraviolet direct band gap energy of 3.4 eV and a broad, defect-related visible wavelength emission band centered near 2 eV. We have shown that the external quantum efficiency can exceed 50% for this nearly white emission band that closely matches the human dark-adapted visual response. To explore the potential of ZnO as a rare earth-free white light phosphor, we investigated the mechanism of efficient defect emission in three types of ZnO powders: unannealed, annealed, and sulfur-doped. Annealing and sulfur-doping of ZnO greatly increase the strength of defect emission while suppressing the UV band edge emission. Continuous wave and ultrafast one- and two-photon excitation spectroscopy are used to examine the defect emission mechanism. Low temperature photoluminescence (PL) and PL excitation (PLE) spectra were measured for all three compounds, and it was found that bound excitons mediate the defect emission. Temperature-dependent PLE spectra for the defect and band edge emission were measured to estimate trapping and activation energies of the bound excitons and clarify the role they play in the defect emission. Time-resolved techniques were used to ascertain the role of exciton diffusion, the effects of reabsorption, and the spatial distributions of radiative and non-radiative traps. In unannealed ZnO we find that defect emission is suppressed and UV band edge emission is inefficient (reduced, and a high density of defects responsible for the broad visible emission are created near the surface. Interestingly, nearly identical PLE spectra are found for both the band edge and the defect emission, one of many indications that the defect emission is deeply connected to bound excitons. Quantum efficiency, also measured as a function of excitation wavelength, closely mirrors the PLE spectra for both emission bands. Sulfur-doped ZnO exhibits additional PLE and X-ray features indicative of a ZnS-rich surface

Effect of irradiation temperature and initial crystal doping level on defect creation efficiency in silicon

International Nuclear Information System (INIS)

Korshunov, F.P.; Markevich, V.P.; Medvedeva, I.F.; Murin, L.I.

1990-01-01

The defect creation processes in n-type silicon irradiated by 60 Co gamma-rays or fast electrons (E = 4 MeV) have been investigated. Using electrical measurements the dependences of introduction efficiencies of the main radiation defects (A-, E-centres, carbon-related complexes) on the irradiation temperature (T irr = 77-470 K) and material doping level (N h = 2 x 10 12 - 2 x 10 15 cm -3 ) are obtained. It is shown that the efficiency of these defects formation is conditioned by the probability of the Frenkel pairs separation and depends strongly on the Fermi level position in crystals being irradiated. 9 refs.; 3 figs.; 1 tab

A simple method for conversion of airborne gamma-ray spectra to ground level doses

DEFF Research Database (Denmark)

Korsbech, Uffe C C; Bargholz, Kim

1996-01-01

A new and simple method for conversion of airborne NaI(Tl) gamma-ray spectra to dose rates at ground level has been developed. By weighting the channel count rates with the channel numbers a spectrum dose index (SDI) is calculated for each spectrum. Ground level dose rates then are determined...... by multiplying the SDI by an altitude dependent conversion factor. The conversion factors are determined from spectra based on Monte Carlo calculations. The results are compared with measurements in a laboratory calibration set-up. IT-NT-27. June 1996. 27 p....

Defects level evaluation of LiTiZn ferrite ceramics using temperature dependence of initial permeability

Science.gov (United States)

Malyshev, A. V.; Petrova, A. B.; Sokolovskiy, A. N.; Surzhikov, A. P.

2018-06-01

The method for evaluating the integral defects level and chemical homogeneity of ferrite ceramics based on temperature dependence analysis of initial permeability is suggested. A phenomenological expression for the description of such dependence was suggested and an interpretation of its main parameters was given. It was shown, that the main criterion of the integral defects level of ferrite ceramics is relation of two parameters correlating with elastic stress value in a material. An indicator of structural perfection can be a maximum value of initial permeability close to Curie point as well. The temperature dependences of initial permeability have analyzed for samples sintered in laboratory conditions and for the ferrite industrial product. The proposed method allows controlling integral defects level of the soft ferrite products and has high sensitivity compare to typical X-ray methods.

EPR of radiation defects in lithium-oxyfluoride glass ceramics

Energy Technology Data Exchange (ETDEWEB)

Fedotovs, A; Rogulis, U; Sarakovskis, A; Dimitrocenko, L, E-mail: andris-f@navigator.l [Institute of Solid State Physics, University of Latvia, Kengaraga st. 8, LV-1063, Riga (Latvia)

2010-11-01

We studied oxyfluoride composites based on lithium silicate glasses with yttrium fluorides and rare-earth dopants. The electron paramagnetic resonance (EPR) has been used to obtain information about radiation induced defects in these materials. Spectra have been measured before and after X-ray irradiation at room temperature and at liquid nitrogen temperature. Fluoride crystallites within samples were created by means of thermal treatment at specific temperatures. EPR spectra of radiation induced defects in oxyfluoride glass ceramics, in which crystallites have not been yet created, show no explicit hfs interaction of fluorine nuclei. However, in glass ceramics, which already contains fluoride crystallites, the hfs characteristic to fluorine nuclei appears in the EPR spectra. EPR hyperfine structure could be explained within a model of an F-type centre in YF{sub 3} crystalline phase.

EPR of radiation defects in lithium-oxyfluoride glass ceramics

Science.gov (United States)

Fedotovs, A.; Rogulis, U.; Sarakovskis, A.; Dimitrocenko, L.

2010-11-01

We studied oxyfluoride composites based on lithium silicate glasses with yttrium fluorides and rare-earth dopants. The electron paramagnetic resonance (EPR) has been used to obtain information about radiation induced defects in these materials. Spectra have been measured before and after X-ray irradiation at room temperature and at liquid nitrogen temperature. Fluoride crystallites within samples were created by means of thermal treatment at specific temperatures. EPR spectra of radiation induced defects in oxyfluoride glass ceramics, in which crystallites have not been yet created, show no explicit hfs interaction of fluorine nuclei. However, in glass ceramics, which already contains fluoride crystallites, the hfs characteristic to fluorine nuclei appears in the EPR spectra. EPR hyperfine structure could be explained within a model of an F-type centre in YF3 crystalline phase.

Point defects and magnetic properties of neutron irradiated MgO single crystal

Directory of Open Access Journals (Sweden)

Mengxiong Cao

2017-05-01

Full Text Available (100-oriented MgO single crystals were irradiated to introduce point defects with different neutron doses ranging from 1.0×1016 to 1.0×1020 cm-2. The point defect configurations were studied with X-ray diffuse scattering and UV-Vis absorption spectra. The isointensity profiles of X-ray diffuse scattering caused by the cubic and double-force point defects in MgO were theoretically calculated based on the Huang scattering theory. The magnetic properties at different temperature were measured with superconducting quantum interference device (SQUID. The reciprocal space mappings (RSMs of irradiated MgO revealed notable diffuse scattering. The UV-Vis spectra indicated the presence of O Frenkel defects in irradiated MgO. Neutron-irradiated MgO was diamagnetic at room temperature and became ferromagnetic at low temperature due to O Frenkel defects induced by neutron-irradiation.

Correlation between defect transition levels and thermoelectric operational temperature of doped CrSi2

Science.gov (United States)

Singh, Abhishek; Pandey, Tribhuwan

2014-03-01

The performance of a thermoelectric material is quantified by figure of merit ZT. The challenge in achieving high ZT value requires simultaneously high thermopower, high electrical conductivity and low thermal conductivity at optimal carrier concentration. So far doping is the most versatile approach used for modifying thermoelectric properties. Previous studies have shown that doping can significantly improve the thermoelectric performance, however the tuning the operating temperature of a thermoelectric device is a main issue. Using first principles density functional theory, we report for CrSi2, a linear relationship between thermodynamic charge state transition levels of defects and temperature at which thermopower peaks. We show for doped CrSi2 that the peak of thermopower occurs at the temperature Tm, which corresponds to the position of defect transition level. Therefore, by modifying the defect transition level, a thermoelectric material with a given operational temperature can be designed. The authors thankfully acknowledge support from ADA under NpMASS.

Optoelectronics and defect levels in hydroxyapatite by first-principles

Science.gov (United States)

Avakyan, Leon A.; Paramonova, Ekaterina V.; Coutinho, José; Öberg, Sven; Bystrov, Vladimir S.; Bugaev, Lusegen A.

2018-04-01

Hydroxyapatite (HAp) is an important component of mammal bones and teeth, being widely used in prosthetic implants. Despite the importance of HAp in medicine, several promising applications involving this material (e.g., in photo-catalysis) depend on how well we understand its fundamental properties. Among the ones that are either unknown or not known accurately, we have the electronic band structure and all that relates to it, including the bandgap width. We employ state-of-the-art methodologies, including density hybrid-functional theory and many-body perturbation theory within the dynamically screened single-particle Green's function approximation, to look at the optoelectronic properties of HAp. These methods are also applied to the calculation of defect levels. We find that the use of a mix of (semi-)local and exact exchange in the exchange-correlation functional brings a drastic improvement to the band structure. Important side effects include improvements in the description of dielectric and optical properties not only involving conduction band (excited) states but also the valence. We find that the highly dispersive conduction band bottom of HAp originates from anti-bonding σ* states along the ⋯OH-OH-⋯ infinite chain, suggesting the formation of a conductive 1D-ice phase. The choice of the exchange-correlation treatment to the calculation of defect levels was also investigated by using the OH-vacancy as a testing model. We find that donor and acceptor transitions obtained within semi-local density functional theory (DFT) differ from those of hybrid-DFT by almost 2 eV. Such a large discrepancy emphasizes the importance of using a high-quality description of the electron-electron interactions in the calculation of electronic and optical transitions of defects in HAp.

Surface defects characterization in a quantum wire by coherent phonons scattering

Energy Technology Data Exchange (ETDEWEB)

Rabia, M. S. [Laboratoire de Mécanique des Structures et Energétique, Faculté du Génie de la Construction, Université. Mammeri de Tizi-Ouzou, BP 17 RP Hasnaoua II, Tizi-Ouzou 15000, Algérie m2msr@yahoo.fr (Algeria)

2015-03-30

The influence of surface defects on the scattering properties of elastic waves in a quasi-planar crystallographic waveguide is studied in the harmonic approximation using the matching method formalism. The structural model is based on three infinite atomic chains forming a perfect lattice surmounted by an atomic surface defect. Following the Landauer approach, we solve directly the Newton dynamical equation with scattering boundary conditions and taking into account the next nearest neighbour’s interaction. A detailed study of the defect-induced fluctuations in the transmission spectra is presented for different adatom masses. As in the electronic case, the presence of localized defect-induced states leads to Fano-like resonances. In the language of mechanical vibrations, these are called continuum resonances. Numerical results reveal the intimate relation between transmission spectra and localized defect states and provide a basis for the understanding of conductance spectroscopy experiments in disordered mesoscopic systems. The results could be useful for the design of phononic devices.

Surface defects characterization in a quantum wire by coherent phonons scattering

International Nuclear Information System (INIS)

Rabia, M. S.

2015-01-01

The influence of surface defects on the scattering properties of elastic waves in a quasi-planar crystallographic waveguide is studied in the harmonic approximation using the matching method formalism. The structural model is based on three infinite atomic chains forming a perfect lattice surmounted by an atomic surface defect. Following the Landauer approach, we solve directly the Newton dynamical equation with scattering boundary conditions and taking into account the next nearest neighbour’s interaction. A detailed study of the defect-induced fluctuations in the transmission spectra is presented for different adatom masses. As in the electronic case, the presence of localized defect-induced states leads to Fano-like resonances. In the language of mechanical vibrations, these are called continuum resonances. Numerical results reveal the intimate relation between transmission spectra and localized defect states and provide a basis for the understanding of conductance spectroscopy experiments in disordered mesoscopic systems. The results could be useful for the design of phononic devices

THE INFRARED SPECTROSCOPY OF POLYCYCLIC AROMATIC HYDROCARBONS WITH FIVE- AND SEVEN-MEMBERED FUSED RING DEFECTS

International Nuclear Information System (INIS)

Ricca, Alessandra; Bauschlicher, Charles W. Jr; Allamandola, Louis J.

2011-01-01

Polycyclic aromatic hydrocarbon (PAH) growth and destruction are thought to proceed via the occasional incorporation of five- and seven-membered fused ring defects in the hexagonal carbon skeleton. Using density functional theory, this paper investigates the effect such five- and seven-membered fused ring defects have on the infrared spectra of ovalene, circumovalene, and circumcircumovalene. The defects make only small changes to the overall infrared (IR) spectra, both in the mid-IR and in the far-IR, of these species. In addition to small shifts in the positions of the bands between the PAHs with and without defects, the most common effect of the defects is to increase the number of bands. Except for an anion with the Stone-Wales defect, all of the species studied have the C-C stretching band at 6.3 μm or at longer wavelengths, the position in Classes B and C astronomical PAH spectra. In the case of the Stone-Wales anion, the band falls at 6.20 μm, suggesting that further study of defects is probably worthwhile, as some PAHs with defects might be important in those sources (Class A) that show a C-C stretching band that falls near 6.2 μm.

Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Yoshihara, Nakaaki [Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Mizushima, Yoriko [Devices and Materials Labs Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Kim, Youngsuk [ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Disco Corporation, Ota, Tokyo 143-8580 (Japan); Nakamura, Tomoji [Devices and Materials Labs Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Ohba, Takayuki [ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Oshima, Nagayasu; Suzuki, Ryoichi [Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

2014-10-07

Vacancy-type defects introduced by the grinding of Czochralski-grown Si wafers were studied using monoenergetic positron beams. Measurements of Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons showed that vacancy-type defects were introduced in the surface region (<98 nm), and the major defect species were identified as (i) relatively small vacancies incorporated in dislocations and (ii) large vacancy clusters. Annealing experiments showed that the defect concentration decreased with increasing annealing temperature in the range between 100 and 500°C. After 600–700°C annealing, the defect-rich region expanded up to about 170 nm, which was attributed to rearrangements of dislocation networks, and a resultant emission of point defects toward the inside of the sample. Above 800°C, the stability limit of those vacancies was reached and they started to disappear. After the vacancies were annealed out (900°C), oxygen-related defects were the major point defects and they were located at <25 nm.

Dipole defects in beryl

International Nuclear Information System (INIS)

Holanda, B A; Cordeiro, R C; Blak, A R

2010-01-01

Dipole defects in gamma irradiated and thermally treated beryl (Be 3 Al 2 Si 6 O 18 ) samples have been studied using the Thermally Stimulated Depolarization Currents (TSDC) technique. TSDC experiments were performed in pink (morganite), green (emerald), blue (aquamarine) and colourless (goshenite) natural beryl. TSDC spectra present dipole peaks at 190K, 220K, 280K and 310K that change after gamma irradiation and thermal treatments. In morganite samples, for thermal treatments between 700K and 1100K, the 280K peak increase in intensity and the band at 220K disappears. An increase of the 280K peak and a decrease of the 190K peak were observed in the TSDC spectra of morganite after a gamma irradiation of 25kGy performed after the thermal treatments. In the case of emerald samples, thermal treatments enhanced the 280K peak and gamma irradiation partially destroyed this band. The goshenite TSDC spectra present only one band at 280K that is not affected either by thermal treatments or by gamma irradiation. All the observed peaks are of dipolar origin because the intensity of the bands is linearly dependent on the polarization field, behaviour of dipole defects. The systematic study, by means of TSDC measurements, of ionizing irradiation effects and thermal treatments in these crystals makes possible a better understanding of the role played by the impurities in beryl crystals.

Diagnosis of faults in rolling element bearings by using directional spectra of vibration signals

International Nuclear Information System (INIS)

Park, Jong Po; Lee, Chong Won

1999-01-01

Backward and forward defect frequencies of rolling element bearing are experimentally investigated utilizing the two-sided directional spectra of the complex-valued vibration signals measured from the outer ring of defective bearings. The experimental results show that the directional zoom spectrum is superior to the conventional spectrum in identification of bearing defect frequencies, in particular the inner race defect frequencies

Modeling of A-DLTS Spectra of MOS Structures

Directory of Open Access Journals (Sweden)

Peter Hockicko

2008-01-01

Full Text Available Acquisition of basic characteristic of defects has become possible through a wide class of measurement techniqueswhich probe the interface, the near interface, as well as the bulk of semiconductor. Results presented here are basedessentially on the acoustic version of Deep Level Transient Spectroscopy (A-DLTS measurements. This method is based onthe acoustoelectric response effect observed at the interface. The A-DLTS uses the acoustoelectric response signal (ARSproduced by MOS structure interface when a longitudal acoustic wave propagates through a structure. The ARS is extremelysensitive to external conditions of the structure and reflects any changes in the charge distribution connected with chargedtraps. The temperature dependence of ARS after bias voltage step application is investigated and the activation energies andsome other parameters of traps at the insulator – semiconductor interface are determined. The results obtained formArrhenius plots of A-DLTS spectra of selected MOS structures are compared with results obtained from modeling of ADLTS spectra using theoretical model.

Gamma-induced defect production in ZrO2-Y2O3 crystals with different defectiveness

International Nuclear Information System (INIS)

Ashurov, M.Kh.; Amonov, M.Z.; Rakov, A.F.

2002-01-01

Full text: The defectiveness degree of ZrO 2 -Y 2 O 3 crystals depends on stabilizer concentration. The work is aimed at study gamma-induced defect production in crystals with different concentration of stabilizer and defects generated by neutron irradiation. Absorption spectra were measured with Specord M-40. It was found, that after gamma-irradiation of as-grown crystals up to some dose the intensity of absorption band at 420 nm reaches the maximum level of saturation. The dose of saturation depends of the concentration of stabilizer. It means that gamma-radiation does not produce any additional defects of structure. The oxygen vacancies existing in as-grown crystals are filled by the radiation induced electrons. Since the number of oxygen vacancies depends on the stabilizer concentration, then all these vacancies can be occupied by electrons at different gamma-doses. In crystals pre-irradiated with different neutron fluences followed by gamma-irradiation, the intensity of absorption bands at 420 and 530 nm increases in two stages. The gamma-dose of the second stage beginning decreases as the neutron fluence grows. The first stage of the absorption increase is due to developing of vacancies existing in as-grown crystals. The second stage is caused by generation of additional vacancies as the result of non-radiative exciton decay near the existing structure damages. The decrease of the gamma-dose, when the second stage of vacancy accumulation begins, results from the neutron induced structure damage degree

Analysis of Bending Waves in Phononic Crystal Beams with Defects

Directory of Open Access Journals (Sweden)

Yongqiang Guo

2018-01-01

Full Text Available Existing investigations on imperfect phononic crystal beams mainly concern periodic multi-span beams carrying either one or two channel waves with random or deterministic disorder in span-length. This paper studies the two channel bending waves in phononic crystal beams consisting of many phases of materials with defects introduced as one structural segment having different cross-sectional dimensions or material parameters. The method of reverberation-ray matrix (MRRM based on the Timoshenko beam theory, which can conduct high-frequency analysis, is extended for the theoretical analysis of dispersion and transmission of bending waves. The supercell technique and the Floquet–Bloch theorem are adopted for modeling the dispersion characteristics, and the whole finite structural model is used to calculate the transmission spectra. Experimental measurements and numerical calculations are provided to validate the displacement transmission obtained by the proposed MRRM, with the effect of damping on transmission spectra being concerned. The high-frequency calculation applicability of the proposed MRRM is also confirmed by comparing the present results with the corresponding ones either using the transfer matrix method (TMM or MRRM based on Euler—Bernoulli beam theory. The influences of defect size, defect form, and unit-cell number on the transmission spectra and the band structures are discussed. The drawn conclusions may be useful for designing or evaluating the defected phononic crystal beams in bending wave control. In addition, our conclusions are especially potential for identifying the defect location through bending wave signals.

Chemical characterisation of non-defective and defective green arabica and robusta coffees by electrospray ionization-mass spectrometry (ESI-MS).

Science.gov (United States)

Mendonça, Juliana C F; Franca, Adriana S; Oliveira, Leandro S; Nunes, Marcella

2008-11-15

The coffee roasted in Brazil is considered to be of low quality, due to the presence of defective coffee beans that depreciate the beverage quality. These beans, although being separated from the non-defective ones prior to roasting, are still commercialized in the coffee trading market. Thus, it was the aim of this work to verify the feasibility of employing ESI-MS to identify chemical characteristics that will allow the discrimination of Arabica and Robusta species and also of defective and non-defective coffees. Aqueous extracts of green (raw) defective and non-defective coffee beans were analyzed by direct infusion electrospray ionization mass spectrometry (ESI-MS) and this technique provided characteristic fingerprinting mass spectra that not only allowed for discrimination of species but also between defective and non-defective coffee beans. ESI-MS profiles in the positive mode (ESI(+)-MS) provided separation between defective and non-defective coffees within a given species, whereas ESI-MS profiles in the negative mode (ESI(-)-MS) provided separation between Arabica and Robusta coffees. Copyright © 2008 Elsevier Ltd. All rights reserved.

Point defects in gallium arsenide characterized by positron annihilation spectroscopy and deep level transient spectroscopy

International Nuclear Information System (INIS)

Mih, R.; Gronsky, R.; Sterne, P.A.

1995-01-01

Positron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. The authors present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot-Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data

An improved AE detection method of rail defect based on multi-level ANC with VSS-LMS

Science.gov (United States)

Zhang, Xin; Cui, Yiming; Wang, Yan; Sun, Mingjian; Hu, Hengshan

2018-01-01

In order to ensure the safety and reliability of railway system, Acoustic Emission (AE) method is employed to investigate rail defect detection. However, little attention has been paid to the defect detection at high speed, especially for noise interference suppression. Based on AE technology, this paper presents an improved rail defect detection method by multi-level ANC with VSS-LMS. Multi-level noise cancellation based on SANC and ANC is utilized to eliminate complex noises at high speed, and tongue-shaped curve with index adjustment factor is proposed to enhance the performance of variable step-size algorithm. Defect signals and reference signals are acquired by the rail-wheel test rig. The features of noise signals and defect signals are analyzed for effective detection. The effectiveness of the proposed method is demonstrated by comparing with the previous study, and different filter lengths are investigated to obtain a better noise suppression performance. Meanwhile, the detection ability of the proposed method is verified at the top speed of the test rig. The results clearly illustrate that the proposed method is effective in detecting rail defects at high speed, especially for noise interference suppression.

DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions

Directory of Open Access Journals (Sweden)

Nikolai A. Poklonski

2016-06-01

Full Text Available p+-n-Diodes have been studied. The diodes were manufactured on wafers (thickness 460 μm, (111 plane of uniformly phosphorus doped float-zone-grown single-crystal silicon. The resistivity of silicon was 90 Ω cm and the phosphorus concentration was 5×1013 cm−3. The diodes were irradiated with 250 MeV krypton ions. The irradiation fluence was 108 cm−2. Deep-level transient spectroscopy (DLTS was used to examine the defects induced by high energy krypton ion implantation. The DLTS spectra were recorded at a frequency of 1 MHz in the 78–290 K temperature range. The capacity-voltage characteristics have been measured at a reverse bias voltage from 0 to −19 V at a frequency of 1 MHz. We show that the main irradiation-induced defects are A-centers and divacancies. The behavior of DLTS spectra in the 150–260 K temperature range depends essentially on the emission voltage Ue. The variation of Ue allows us to separate the contributions of different defects into the DLTS spectrum in the 150–260 K temperature range. We show that, in addition to A-centers and divacancies, irradiation produces multivacancy complexes with the energy level Et = Ec−(0.5±0.02 eV and an electron capture cross section of ~4×10–13 cm2.

Optical absorption and scattering spectra of pathological stomach tissues

Science.gov (United States)

Giraev, K. M.; Ashurbekov, N. A.; Lakhina, M. A.

2011-03-01

Diffuse reflection spectra of biotissues in vivo and transmission and reflection coefficients for biotissues in vitro are measured over 300-800 nm. These data are used to determine the spectral absorption and scattering indices and the scattering anisotropy factor for stomach mucous membranes under normal and various pathological conditions (chronic atrophic and ulcerous defects, malignant neoplasms). The most importan tphysiological (hemodynamic and oxygenation levels) and structural-morphological (scatterer size and density) parameters are also determined. The results of a morphofunctional study correlate well with the optical properties and are consistent with data from a histomorphological analysis of the corresponding tissues.

Zn I spectra in the 1300–6500 cm−1 range

International Nuclear Information System (INIS)

Civiš, S.; Ferus, M.; Chernov, V.E.; Zanozina, E.M.; Juha, L.

2014-01-01

We study spectra of a plasma created by the laser ablation of ZnS targets in a vacuum and report 47 (not observed previously) Zn I lines in the range of 1300–6400 cm −1 . From the recorded spectra we determine energies of 5g, 6g, 7f, 6h, 7h and 8h Zn I levels. We also calculate a large list of transition probabilities and oscillator strengths for Zn I in the observed spectral range. -- Highlights: • We report 47 new Zn I lines in the range of 1300–6400 cm −1 . • We determine energies of 5g, 6g, 7f, 6h, 7h and 8h states of Zn I. • Using quantum defect theory, we calculate a large list of transition probabilities

Electronic and atomic structure of complex defects in Al- and Ga-highly doped ZnO films

Energy Technology Data Exchange (ETDEWEB)

Menéndez-Proupin, Eduardo [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Departamento de Física, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, 780-0003 Ñuñoa, Santiago (Chile); Palacios, Pablo, E-mail: pablo.palacios@upm.es [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Dpt. FAIAN, E.T.S.I. Aeronáutica y del Espacio, UPM, Pz. Cardenal Cisneros 3, 28040 Madrid (Spain); Wahnón, Perla [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Dpt. TFO, E.T.S.I. Telecomunicación, UPM, Ciudad Universitaria, 28040 Madrid (Spain)

2015-06-15

Point defects in Ga- and Al-doped ZnO thin films are studied by means of first principles electronic structure calculations. Candidate defects are identified to explain recently observed differences in electrical and spectroscopic behavior of both systems. Substitutional doping in Ga–ZnO explain the metallic behavior of the electrical properties. Complexes of interstitial oxygen with substitutional Ga can behave as acceptor and cause partial compensation, as well as gap states below the conduction band minimum as observed in photoemission experiments. Zn vacancies can also act as compensating acceptors. On the other hand, the semiconducting behavior of Al–ZnO and the small variation in the optical gap compared with pure ZnO, can be explained by almost complete compensation between acceptor Zn vacancies and substitutional Al donors. Interstitial Al can also be donor levels and can be the origin of the small band observed in photoemission experiments below the Fermi level. Combinations of substitutional Al with interstitial oxygen can act simultaneously as compensating acceptor and generator of the mentioned photoemission band. The theoretical calculations have been done using density functional theory (DFT) within the generalized gradient approximation with on-site Coulomb interaction. In selected cases, DFT calculations with semilocal-exact exchange hybrid functionals have been performed. Results explain photoelectron spectra of Ga–ZnO and Al–ZnO at the corresponding doping levels. - Highlights: • Defects in Ga- and Al-heavy-doped ZnO films are studied by quantum calculations. • Defects compatible with electrical, optical, and HAXPES spectra are proposed. • Doping efficiency is reduced by Zn vacancies and O interstitials. • HAXPES bands near the Fermi level are induced by Al{sub i}, and complexes Ga{sub Zn}-O{sub i}, and Al{sub Zn}-O{sub i}.

Application of elastic net and infrared spectroscopy in the discrimination between defective and non-defective roasted coffees.

Science.gov (United States)

Craig, Ana Paula; Franca, Adriana S; Oliveira, Leandro S; Irudayaraj, Joseph; Ileleji, Klein

2014-10-01

The quality of the coffee beverage is negatively affected by the presence of defective coffee beans and its evaluation still relies on highly subjective sensory panels. To tackle the problem of subjectivity, sophisticated analytical techniques have been developed and have been shown capable of discriminating defective from non-defective coffees after roasting. However, these techniques are not adequate for routine analysis, for they are laborious (sample preparation) and time consuming, and reliable, simpler and faster techniques need to be developed for such purpose. Thus, it was the aim of this study to evaluate the performance of infrared spectroscopic methods, namely FTIR and NIR, for the discrimination of roasted defective and non-defective coffees, employing a novel statistical approach. The classification models based on Elastic Net exhibited high percentage of correct classification, and the discriminant infrared spectra variables extracted provided a good interpretation of the models. The discrimination of defective and non-defective beans was associated with main chemical descriptors of coffee, such as carbohydrates, proteins/amino acids, lipids, caffeine and chlorogenic acids. Copyright © 2014 Elsevier B.V. All rights reserved.

Characterization of deep level defects in Tl6I4S single crystals by photo-induced current transient spectroscopy

International Nuclear Information System (INIS)

Peters, J A; Liu, Z; Sebastian, M; Wessels, B W; Im, J; Freeman, A J; Nguyen, S; Kanatzidis, M G

2015-01-01

Defect levels in semi-insulating Tl 6 I 4 S single crystals grown by the horizontal Bridgman technique have been characterized using photo-induced current transient spectroscopy (PICTS). These measurements revealed six electron traps located at (0.059  ±  0.007), (0.13  ±  0.012), (0.31  ±  0.074), (0.39  ±  0.019), (0.62  ±  0.110), and (0.597  ±  0.105). These defect levels are attributed to vacancies (V I , V S ) and antisite defects (I S , Tl S , Tl I ) upon comparison to calculations of native defect energy levels using density functional theory and defects recently reported from photoluminescence and photoconductivity measurements. (paper)

Positron annihilation spectroscopy in defects of semiconductors

International Nuclear Information System (INIS)

Fujinami, Masanori

2002-01-01

Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 18 cm -3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 15 cm -2 ) silicon and oxygen-implanted (180 keV, 2x10 15 cm -2 ) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V 6 O 2 at 600degC and V 10 O 6 at 800degC. (S.Y.)

Revealing low-energy part of the beta spectra

International Nuclear Information System (INIS)

Selvi, S.; Celiktas, C.

2002-01-01

An effective method is proposed to separate electronic noise from the beta-particle spectra revealing lower energy part of the spectra. The available methods for reducing the noise problem cut the noise along with the low-energy part of the beta spectra by using a discriminator. Our setup eliminates this undesirable effect by shifting the noise toward the lowest energy scale leaving the low-energy part of spectra undisturbed. We achieved this noise-pulse-separation by treating the noise as a pulse so that we can exploit the application of the pulse-shape analyzer equipment used for pulse shape identification of particles and rejection of defective pulses. To the best of our knowledge this method of the noise separation is a novel approach

Influence of structural defects on excitonic photoluminescence of pentacene

International Nuclear Information System (INIS)

Piryatins'kij, Yu.P.; Kurik, M.V.

2011-01-01

The exciton reflection, absorption, and photoluminescence spectra for single crystals and polycrystalline films have been studied in the temperature range of 4.2-296 K. A significant influence of structural defects arising during phase transitions on the exciton spectra of pentacene has been detected. The mechanisms of photoluminescence in single crystals and crystalline films of pentacene have been considered.

A nonlinear wavelet method for data smoothing of low-level gamma-ray spectra

International Nuclear Information System (INIS)

Gang Xiao; Li Deng; Benai Zhang; Jianshi Zhu

2004-01-01

A nonlinear wavelet method was designed for smoothing low-level gamma-ray spectra. The spectra of a 60 Co graduated radioactive source and a mixed soil sample were smoothed respectively according to this method and a 5 point smoothing method. The FWHM of 1,332 keV peak of 60 Co source and the absolute activities of 238 U of soil sample were calculated. The results show that the nonlinear wavelet method is better than the traditional method, with less loss of spectral peak and a more complete reduction of statistical fluctuation. (author)

Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

International Nuclear Information System (INIS)

Wu, Bin; Zhang, Yuantao; Shi, Zhifeng; Li, Xiang; Cui, Xijun; Zhuang, Shiwei; Zhang, Baolin; Du, Guotong

2014-01-01

Epitaxial ZnO structures with inherent two layers of nanorods layer on film layer were fabricated on c-Al 2 O 3 by metal-organic chemical vapor deposition (MOCVD) and studied by photoluminescence. Specially, photoluminescence spectra for the film layer were obtained by rendering the excitation from the substrate side. Different defect levels configurations between nanorods and film were revealed. Zinc vacancies tend to form in top nanorods layer, whereas abundant zinc–oxygen divacancies accumulate in bottom film layer. An acceptor state with activation energy of ∼200 meV is exclusive to the film layer. The stacking fault related acceptor and Al introduced donor are present in both layers. Besides, two other defect related donors contained in the nanorods layer perhaps also exist within the film layer. - Highlights: • Inherent double layer ZnO of nanorods on film layer were studied by PL. • V Zn tend to form in the nanorods layer, and V ZnO accumulate in the film layer. • An acceptor with activation energy of ∼200 meV is exclusive to the film layer. • Pure NBE emission without DLE in RT PL spectrum does not mean good crystallinity

Understanding defect distributions in polythiophenes via comparison of regioregular and regiorandom species

Energy Technology Data Exchange (ETDEWEB)

Muntasir, Tanvir, E-mail: tanvir@iastate.edu, E-mail: sumitc@iastate.edu [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Chaudhary, Sumit, E-mail: tanvir@iastate.edu, E-mail: sumitc@iastate.edu [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011 (United States)

2015-11-28

Organic photovoltaics (OPVs) are regarded as promising for solar-electric conversion with steadily improving power conversion efficiencies. For further progress, it is crucial to understand and mitigate defect states (traps) residing in the band-gap of OPV materials. In this work, using capacitance measurements, we analyzed two major bands in the density of states (DOS) energy spectra of defects in poly(3-hexylthiophene) (P3HT); regio-regular and regio-random species of P3HT were compared to elucidate the role of morphological disorder. To accurately interpret the obtained DOS profile, trap emission prefactors and activation energy were extracted from temperature dependent capacitance-frequency measurements, while doping, Fermi energy, built-in voltage, and energy levels of the defects were extracted from capacitance-voltage measurements. We identified that the lower energy band—misinterpreted in literature as a defect distribution—stems from free carrier response. The higher energy defect distribution band for regio-random P3HT was an order of magnitude higher than region-regular P3HT, thus stemming from morphological disorder. Impedance spectroscopy was also employed for further comparison of the two P3HT species.

Understanding defect distributions in polythiophenes via comparison of regioregular and regiorandom species

International Nuclear Information System (INIS)

Muntasir, Tanvir; Chaudhary, Sumit

2015-01-01

Organic photovoltaics (OPVs) are regarded as promising for solar-electric conversion with steadily improving power conversion efficiencies. For further progress, it is crucial to understand and mitigate defect states (traps) residing in the band-gap of OPV materials. In this work, using capacitance measurements, we analyzed two major bands in the density of states (DOS) energy spectra of defects in poly(3-hexylthiophene) (P3HT); regio-regular and regio-random species of P3HT were compared to elucidate the role of morphological disorder. To accurately interpret the obtained DOS profile, trap emission prefactors and activation energy were extracted from temperature dependent capacitance-frequency measurements, while doping, Fermi energy, built-in voltage, and energy levels of the defects were extracted from capacitance-voltage measurements. We identified that the lower energy band—misinterpreted in literature as a defect distribution—stems from free carrier response. The higher energy defect distribution band for regio-random P3HT was an order of magnitude higher than region-regular P3HT, thus stemming from morphological disorder. Impedance spectroscopy was also employed for further comparison of the two P3HT species

Left-right correlation in coupled F-center defects.

Science.gov (United States)

Janesko, Benjamin G

2016-08-07

This work explores how left-right correlation, a textbook problem in electronic structure theory, manifests in a textbook example of electrons trapped in crystal defects. I show that adjacent F-center defects in lithium fluoride display symptoms of "strong" left-right correlation, symptoms similar to those seen in stretched H2. Simulations of UV/visible absorption spectra qualitatively fail to reproduce experiment unless left-right correlation is taken into account. This is of interest to both the electronic structure theory and crystal-defect communities. Theorists have a new well-behaved system to test their methods. Crystal-defect groups are cautioned that the approximations that successfully model single F-centers may fail for adjacent F-centers.

Left-right correlation in coupled F-center defects

International Nuclear Information System (INIS)

Janesko, Benjamin G.

2016-01-01

This work explores how left-right correlation, a textbook problem in electronic structure theory, manifests in a textbook example of electrons trapped in crystal defects. I show that adjacent F-center defects in lithium fluoride display symptoms of “strong” left-right correlation, symptoms similar to those seen in stretched H 2 . Simulations of UV/visible absorption spectra qualitatively fail to reproduce experiment unless left-right correlation is taken into account. This is of interest to both the electronic structure theory and crystal-defect communities. Theorists have a new well-behaved system to test their methods. Crystal-defect groups are cautioned that the approximations that successfully model single F-centers may fail for adjacent F-centers.

The roles of the temperature on the structural and electronic properties of deep-level V{sub As}V{sub Ga} defects in gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Ma, Deming, E-mail: xautmdm@163.com; Chen, Xi; Qiao, Hongbo; Shi, Wei; Li, Enling

2015-07-15

Highlights: • The energy gap of the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} is 0.82 eV. • Proves that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. • Proves that EL2 and EL6 deep-level defects can transform into each other. • Temperature has an important effect on the microstructure of deep-level defects. - Abstract: The roles of temperature on the structural and electronic properties of V{sub As}V{sub Ga} defects in gallium arsenide have been studied by using ab-initio molecular dynamic (MD) simulation. Our calculated results show that the relatively stable quaternary complex defect of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} can be converted from the V{sub As}V{sub Ga} complex clusters defect between 300 K and 1173 K; however, from 1173 K to 1373 K, the decomposition of the complex defect Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} occurs, turning into a deep-level V{sub As}V{sub Ga} cluster defect and an isolated As{sub Ga} antisite defect, and relevant defect of Ga{sub As} is recovered. The properties of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} defect has been studied by first-principles calculations based on hybrid density functional theory. Our calculated results show that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. Thus, we reveal that the temperature has an important effect on the microstructure of deep-level defects and defect energy level in gallium arsenide that EL2 and EL6 deep-level defects have a certain correlation, which means they could transform into each other. Controlling temperature in the growth process of GaAs could change the microstructure of deep-level defects and defect energy levels in gallium arsenide materials, whereby affects the electron transport properties of materials.

Power spectrum analysis for defect screening in integrated circuit devices

Science.gov (United States)

Tangyunyong, Paiboon; Cole Jr., Edward I.; Stein, David J.

2011-12-01

A device sample is screened for defects using its power spectrum in response to a dynamic stimulus. The device sample receives a time-varying electrical signal. The power spectrum of the device sample is measured at one of the pins of the device sample. A defect in the device sample can be identified based on results of comparing the power spectrum with one or more power spectra of the device that have a known defect status.

Theoretical studies of defects in insulators within the framework of the local density approximation

International Nuclear Information System (INIS)

Pederson, M.R.; Klein, B.M.

1989-01-01

The muffin-tin Green's function method and a linear combination of atomic orbitals cluster method for defect studies are discussed. These methods have been used to carry out calculations on F-like centers in MgO, CaO and LiF. Although the local density approximation leads to qualitatively correct information pertaining to the occupied states, in addition to the usual perfect-crystal band gap problem, the unoccupied defect levels are found to lie above the onset of the conducting band, in disagreement with the experimental measurements. Results using two methods for incorporating many-electron corrections into an LDA-like computational algorithm are discussed. These methods are the 'scissor-operator' approach to the band gap problem, and the self-interaction-correction (SIC) framework for improving the local spin density approximation. SIC results for the defect excitation spectra are in very good agreement with experiment. This method, when fully developed, should give an excellent ab initio description of defects in insulators. (author) 29 refs., 3 figs., 1 tab

Relativistic Multichannel Treatment of Krypton Spectra across the First Ionization Threshold

Institute of Scientific and Technical Information of China (English)

QU Yi-Zhi; PENG Yong-Lun

2005-01-01

@@ The relativistic multichannel theory has been extended to calculate both the eigen quantum defects μα, transformation matrix Uiα, and the eigen dipole matrix elements Dα of krypton. The Rydberg and autoionizationspectra of krypton across the first ionization threshold are calculated within the framework of multichannel quantum defect theory. Our calculated spectra are in agreement with the absolute measurement data.

Defect identification for the AsGa family

International Nuclear Information System (INIS)

Overhof, H.; Spaeth, J.-M.

2003-01-01

The As Ga family consists of at least four distinctly different point defects including the technologically important EL2 defect. While the different members are easily distinguished from their MCDA spectra, the differences of the hf and shf interactions as derived from ODEPR and ODENDOR are rather small. We present ab initio calculations using the LMTO-ASA Green's function method for a variety of defect models that might be relevant for the identification of As Ga -related defects. We confirm the identification of the isolated As Ga and show that the {As Ga -X 2 } defect must be identified with the nearest-neighbor antistructure pair rather than with the {As Ga -V As } pair. For the {As Ga -X 1 } defect a distant antistructure pair is a likely candidate. For the EL2, the most important member of the As Ga family, we have not found a conclusive defect model. The recent ODENDOR data are similar to those of the distant orthorhombic {As Ga -V Ga } pair, which, however is a triple acceptor and not a donor

A magnetically tunable non-Bragg defect mode in a corrugated waveguide filled with liquid crystals

Science.gov (United States)

Zhang, Lu; Fan, Ya-Xian; Liu, Huan; Han, Xu; Lu, Wen-Qiang; Tao, Zhi-Yong

2018-04-01

A magnetically tunable, non-Bragg defect mode (NBDM) was created in the terahertz frequency range by inserting a defect in the middle of a periodically corrugated waveguide filled with liquid crystals (LCs). In the periodic waveguide, non-Bragg gaps beyond the Bragg ones, which appear in the transmission spectra, are created by different transverse mode resonances. The transmission spectra of the waveguide containing a defect showed that a defect mode was present inside the non-Bragg gap. The NBDM has quite different features compared to the Bragg defect mode, which includes more complex, high-order guided wave modes. In our study, we filled the corrugated waveguide with LCs to realize the tunability of the NBDM. The simulated results showed that the NBDM in a corrugated waveguide filled with LCs can be used in filters, sensors, switches, and other terahertz integrated devices.

Study of defects near molybdenum surface using thermal desorption spectrometer

International Nuclear Information System (INIS)

Naik, P.K.

1980-01-01

Thermal desorption spectrometry is utilized to study the migration of atoms and defects near molybdenum surface. The thermal desorption spectra of inert gas ions (neon, argon and krypton) injected with various energies (430-1950 eV) into a polycrystalline molybdenum target with various dosages (6.4 x 10sup(12) - 3.9 x 10sup(14) ions/cmsup(2)) are investigated. Four different states of binding of the trapped atoms corresponding to the activation energies for desorption have been revealed from the spectra. The activation energies are found to be relatively insensitive to the species of the bombarding ion, incident ion energy and the dosage. The patterns of the spectra are strongly influenced by the mean projected range of the ions into the solid. The activation energies deduced are in good agreement with those reported for the migration of atoms and defects in molybdenum. (auth.)

Damage coefficient and defect level of copper-contaminated silicon N+P diode

International Nuclear Information System (INIS)

Usami, A.; Kato, Y.

1975-01-01

The damage coefficient at 298 0 K of copper-contaminated N + P diodes is smaller than that of non-contaminated ones. In these copper-contaminated samples, the higher the bulk resistivity is, the smaller is the damage coefficient. For non-contaminated diodes, the damage coefficient of samples of pulled bulk crystals is smaller than that of floating zone crystals, and the higher bulk resistivity diodes have smaller damage coefficient. At 217 0 K measurement, the effect of copper-contamination on the damage coefficient could not be observed. The energy levels of defects introduced by gamma ray irradiation are approximately0.30 eV, and approximately0.28 eV with non-contaminated FZ 135 ohm-cm and CZ 10 ohm-cm bulk samples, respectively. In copper-contaminated samples, approximately0.60 eV and approximately0.45 eV are obtained as the defect energy levels for FZ 135 ohm-cm and CZ 10 ohm-cm bulk samples. (U.S.)

Di-interstitial defect in silicon revisited

International Nuclear Information System (INIS)

Londos, C. A.; Antonaras, G.; Chroneos, A.

2013-01-01

Infrared spectroscopy was used to study the defect spectrum of Cz-Si samples following fast neutron irradiation. We mainly focus on the band at 533 cm −1 , which disappears from the spectra at ∼170 °C, exhibiting similar thermal stability with the Si-P6 electron paramagnetic resonance (EPR) spectrum previously correlated with the di-interstitial defect. The suggested structural model of this defect comprises of two self-interstitial atoms located symmetrically around a lattice site Si atom. The band anneals out following a first-order kinetics with an activation energy of 0.88 ± 0.3 eV. This value does not deviate considerably from previously quoted experimental and theoretical values for the di-interstitial defect. The present results indicate that the 533 cm −1 IR band originates from the same structure as that of the Si-P6 EPR spectrum

Low-temperature annealing of radiation defects in electron-irradiated gallium phosphide

International Nuclear Information System (INIS)

Kolb, A.A.; Megela, I.G.; Buturlakin, A.P.; Goyer, D.B.

1990-01-01

The isochronal annealing of radiation defects in high-energy electron irradiated n-GaP monocrystals within the 77 to 300 K range has been investigated by optical and electrical techniques. The changes in conductance and charge carrier mobility as functions of annealing temperature as well as the variation of optical absorption spectra of GaP under irradiation and annealing provide evidence that most of radiation defects are likely secondary complexes of defects

Deep-level transient spectroscopy of low-energy ion-irradiated silicon

DEFF Research Database (Denmark)

Kolkovsky, Vladimir; Privitera, V.; Nylandsted Larsen, Arne

2009-01-01

 During electron-gun deposition of metal layers on semiconductors, the semiconductor is bombarded with low-energy metal ions creating defects in the outermost surface layer. For many years, it has been a puzzle why deep-level transient spectroscopy spectra of the as-deposited, electron-gun evapor...

Vacancy-related defect distributions in 11B-, 14N-, and 27Al-implanted 4H-SiC: Role of channeling

International Nuclear Information System (INIS)

Janson, M.S.; Slotte, J.; Kuznetsov, A.Yu.; Saarinen, K.; Hallen, A.

2004-01-01

The defect distributions in 11 B-, 14 N-, and 27 Al-implanted epitaxial 4H-SiC are studied using monoenergetic positron beams. At least three types of defects are needed to account for the Doppler broadening annihilation spectra and two of the defects are tentatively identified as V Si , and V Si V C . By comparing the defect profiles extracted from the annihilation spectra to the chemical profiles determined by secondary ion mass spectrometry, and to the primary defect profiles obtained from binary collision approximation simulations, it is concluded that the defects found at depths considerably deeper than the projected range of the implanted ions mainly originate from deeply channeled ions

A first-principles investigation of the optical spectra of oxidized graphene

KAUST Repository

Singh, Nirpendra

2013-01-14

The electronic and optical properties of mono, di, tri, and tetravacancies in graphene are studied in comparison to each other, using density functional theory. In addition, oxidized monovacancies are considered for different oxygen concentrations. Pristine graphene is found to be more absorptive than any defect configuration at low energy. We demonstrate characteristic differences in the optical spectra of the various defects for energies up to 3 eV. This makes it possible to quantify by optical spectroscopy the ratios of the defect species present in a sample.

A first-principles investigation of the optical spectra of oxidized graphene

KAUST Repository

Singh, Nirpendra; Kaloni, Thaneshwor P.; Schwingenschlö gl, Udo

2013-01-01

The electronic and optical properties of mono, di, tri, and tetravacancies in graphene are studied in comparison to each other, using density functional theory. In addition, oxidized monovacancies are considered for different oxygen concentrations. Pristine graphene is found to be more absorptive than any defect configuration at low energy. We demonstrate characteristic differences in the optical spectra of the various defects for energies up to 3 eV. This makes it possible to quantify by optical spectroscopy the ratios of the defect species present in a sample.

Photoabsorption spectra in the perturbative regime for atoms in crossed electric and magnetic fields

International Nuclear Information System (INIS)

Marxer, H.; Moser, I.; O'Mahony, P.F.; Mota-Furtado, F.

1994-01-01

We calculate photoabsorption spectra of atoms in crossed electric and magnetic fields using a truncated basis of Coulomb eigenfunctions. The method yields spectra in the regime where inter-n-mixing is not dominant and allows for the treatment of non-hydrogenic atoms via a simple recourse to quantum defects. We compare results for hydrogen to those obtained in second order perturbation theory where the residual degeneracy left in first order perturbation theory is completely lifted and we show that only a very small basis size is needed to achieve convergence to within the accuracy of second order perturbation theory. In the case of lithium the coupling of an incomplete hydrogen-like manifold to states with non-negligible quantum defects substantially modifies the spectra obtained in comparison to the purely hydrogenic spectra. In the inter-n-mixing regime we also compare our convoluted results directly with an experimental spectrum for hydrogen and find good agreement below the saddle point. (Author)

Positron annihilation spectroscopy in defects of semiconductors

CERN Document Server

Fujinami, M

2002-01-01

Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 sup 1 sup 8 cm sup - sup 3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon and oxygen-implanted (180 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V sub 6 O sub 2 at 600degC and V sub 1 sub 0 O sub 6 at 800degC. (S.Y.)

Conversion of Airborne Gamma ray Spectra to Ground Level Air Kerma Rates

DEFF Research Database (Denmark)

Bargholz, Kim; Korsbech, Uffe C C

1997-01-01

A new method for relating airborne gamma-ray spectra to dose rates and kerma rates at ground level is presented. Dependent on flying altitude 50 m to 125 m the method gives correct results for gamma energies above 250 keV respective 350 keV. At lower energies the method underestimate the dose...... or kerma rates; by having a large fraction of the ground level gamma-rays at energies below 350 keV special care should be taken at an interpretation of the results....

Optical transitions in two-dimensional topological insulators with point defects

Science.gov (United States)

Sablikov, Vladimir A.; Sukhanov, Aleksei A.

2016-12-01

Nontrivial properties of electronic states in topological insulators are inherent not only to the surface and boundary states, but to bound states localized at structure defects as well. We clarify how the unusual properties of the defect-induced bound states are manifested in optical absorption spectra in two-dimensional topological insulators. The calculations are carried out for defects with short-range potential. We find that the defects give rise to the appearance of specific features in the absorption spectrum, which are an inherent property of topological insulators. They have the form of two or three absorption peaks that are due to intracenter transitions between electron-like and hole-like bound states.

Phase time delay and Hartman effect in a one-dimensional photonic crystal with four-level atomic defect layer

Science.gov (United States)

Jamil, Rabia; Ali, Abu Bakar; Abbas, Muqaddar; Badshah, Fazal; Qamar, Sajid

2017-08-01

The Hartman effect is revisited using a Gaussian beam incident on a one-dimensional photonic crystal (1DPC) having a defect layer doped with four-level atoms. It is considered that each atom of the defect layer interacts with three driving fields, whereas a Gaussian beam of width w is used as a probe light to study Hartman effect. The atom-field interaction inside the defect layer exhibits electromagnetically induced transparency (EIT). The 1DPC acts as positive index material (PIM) and negative index material (NIM) corresponding to the normal and anomalous dispersion of the defect layer, respectively, via control of the phase associated with the driving fields and probe detuning. The positive and negative Hartman effects are noticed for PIM and NIM, respectively, via control of the relative phase corresponding to the driving fields and probe detuning. The advantage of using four-level EIT system is that a much smaller absorption of the transmitted beam occurs as compared to three-level EIT system corresponding to the anomalous dispersion, leading to negative Hartman effect.

Defect dynamics in Li substituted nanocrystalline ZnO: A spectroscopic analysis

Science.gov (United States)

Ghosh, S.; Nambissan, P. M. G.; Thapa, S.; Mandal, K.

2014-12-01

Very recently, vacancy-type defects have been found to play a major role in stabilizing d0 ferromagnetism in various low dimensional ZnO systems. In this context, the evolution of vacancy-type defects within the ZnO nanocrystals due to the doping of ZnO by alkali metal lithium (Li) is investigated using X-ray photoelectron (XPS), photoluminescence (PL) and positron annihilation spectroscopy (PAS). Li-doping is found to have significant effects in modifying the vacancy-type defects, especially the Zn vacancy (VZn) defects within the ZnO lattice. XPS measurement indicated that initially the Li1+ ions substitute at Zn2+ sites, but when Li concentration exceeds 7 at%, excess Li starts to move through the interstitial sites. The increase in positron lifetime components and the lineshape S-parameter obtained from coincident Doppler broadening spectra with Li-doping indicated an enhancement of VZn defect concentration within the doped ZnO lattice. The vacancy type defects, initially of the predominant configuration VZn+O+Zn got reduced to neutral ZnO divacancies due to the partial recombination by the doped Li1+ ions but, when the doping concentration exceeded 7 at% and Li1+ ions started migrating to the interstitials, positron diffusion is partly impeded and this results in reduced probability of annihilation. PL spectra have shown intense green and yellow-orange emission due to the stabilization of a large number of VZn defects and Li substitutional (LiZn) defects respectively. Hence Li can be a very useful dopant in stabilizing and modifying significant amount of Zn vacancy-defects which can play a useful role in determining the material behavior.

Defect dynamics in Li substituted nanocrystalline ZnO: A spectroscopic analysis

International Nuclear Information System (INIS)

Ghosh, S.; Nambissan, P.M.G.; Thapa, S.; Mandal, K.

2014-01-01

Very recently, vacancy-type defects have been found to play a major role in stabilizing d 0 ferromagnetism in various low dimensional ZnO systems. In this context, the evolution of vacancy-type defects within the ZnO nanocrystals due to the doping of ZnO by alkali metal lithium (Li) is investigated using X-ray photoelectron (XPS), photoluminescence (PL) and positron annihilation spectroscopy (PAS). Li-doping is found to have significant effects in modifying the vacancy-type defects, especially the Zn vacancy (V Zn ) defects within the ZnO lattice. XPS measurement indicated that initially the Li 1+ ions substitute at Zn 2+ sites, but when Li concentration exceeds 7 at%, excess Li starts to move through the interstitial sites. The increase in positron lifetime components and the lineshape S-parameter obtained from coincident Doppler broadening spectra with Li-doping indicated an enhancement of V Zn defect concentration within the doped ZnO lattice. The vacancy type defects, initially of the predominant configuration V Zn+O+Zn got reduced to neutral ZnO divacancies due to the partial recombination by the doped Li 1+ ions but, when the doping concentration exceeded 7 at% and Li 1+ ions started migrating to the interstitials, positron diffusion is partly impeded and this results in reduced probability of annihilation. PL spectra have shown intense green and yellow-orange emission due to the stabilization of a large number of V Zn defects and Li substitutional (Li Zn ) defects respectively. Hence Li can be a very useful dopant in stabilizing and modifying significant amount of Zn vacancy-defects which can play a useful role in determining the material behavior

Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

International Nuclear Information System (INIS)

Kunj, Saurabh; Sreenivas, K.

2016-01-01

Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O_2/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

Science.gov (United States)

Kunj, Saurabh; Sreenivas, K.

2016-05-01

Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O2/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

Defect free C-axis oriented zinc oxide (ZnO) films grown at room temperature using RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Kunj, Saurabh, E-mail: saurabhkunj22@gmail.com; Sreenivas, K. [Department of Physics & Astrophysics, University of Delhi, Delhi-110007 (India)

2016-05-23

Radio frequency Magnetron sputtering technique was employed to fabricate ZnO thin films on quartz substrate at room temperature. The effect of varying oxygen to argon (O{sub 2}/Ar) gas ratio on the structural and photoluminescence properties of the film is analyzed.X-ray diffraction (XRD) spectra reveals the formation of hexagonal wurtzite structured ZnO thin films with preferred orientation along (002) plane. Photoluminescence (PL) characterization reveals the preparation of highly crystalline films exhibiting intense Ultraviolet (UV) emission with negligible amount of defects as indicated by the absence of Deep Level Emission (DLE) in the PL spectra.

Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

International Nuclear Information System (INIS)

Armstrong, Andrew M.; Moseley, Michael W.; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan J.

2015-01-01

The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al 0.7 Ga 0.3 N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, including thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al 0.7 Ga 0.3 N

Reduced heme levels underlie the exponential growth defect of the Shewanella oneidensis hfq mutant.

Directory of Open Access Journals (Sweden)

Christopher M Brennan

Full Text Available The RNA chaperone Hfq fulfills important roles in small regulatory RNA (sRNA function in many bacteria. Loss of Hfq in the dissimilatory metal reducing bacterium Shewanella oneidensis strain MR-1 results in slow exponential phase growth and a reduced terminal cell density at stationary phase. We have found that the exponential phase growth defect of the hfq mutant in LB is the result of reduced heme levels. Both heme levels and exponential phase growth of the hfq mutant can be completely restored by supplementing LB medium with 5-aminolevulinic acid (5-ALA, the first committed intermediate synthesized during heme synthesis. Increasing expression of gtrA, which encodes the enzyme that catalyzes the first step in heme biosynthesis, also restores heme levels and exponential phase growth of the hfq mutant. Taken together, our data indicate that reduced heme levels are responsible for the exponential growth defect of the S. oneidensis hfq mutant in LB medium and suggest that the S. oneidensis hfq mutant is deficient in heme production at the 5-ALA synthesis step.

The electronic and optical properties of amorphous silica with hydrogen defects by ab initio calculations

Science.gov (United States)

Ren, Dahua; Xiang, Baoyan; Hu, Cheng; Qian, Kai; Cheng, Xinlu

2018-04-01

Hydrogen can be trapped in the bulk materials in four forms: interstitial molecular H2, interstitial atom H, O‑H+(2Si=O–H)+, Si‑H‑( {{4O}}\\bar \\equiv {{Si&x2212H}})‑ to affect the electronic and optical properties of amorphous silica. Therefore, the electronic and optical properties of defect-free and hydrogen defects in amorphous silica were performed within the scheme of density functional theory. Initially, the negative charged states hydrogen defects introduced new defect level between the valence band top and conduction band bottom. However, the neutral and positive charged state hydrogen defects made both the valence band and conduction band transfer to the lower energy. Subsequently, the optical properties such as absorption spectra, conductivity and loss functions were analyzed. It is indicated that the negative hydrogen defects caused the absorption peak ranging from 0 to 2.0 eV while the positive states produced absorption peaks at lower energy and two strong absorption peaks arose at 6.9 and 9.0 eV. However, the neutral hydrogen defects just improved the intensity of absorption spectrum. This may give insights into understanding the mechanism of laser-induced damage for optical materials. Project supported by the Science and Technology of Hubei Provincial Department of Education (No. B2017098).

Enhanced gamma ray sensitivity in bismuth triiodide sensors through volumetric defect control

International Nuclear Information System (INIS)

Johns, Paul M.; Baciak, James E.; Nino, Juan C.

2016-01-01

Some of the more attractive semiconducting compounds for ambient temperature radiation detector applications are impacted by low charge collection efficiency due to the presence of point and volumetric defects. This has been particularly true in the case of BiI_3, which features very attractive properties (density, atomic number, band gap, etc.) to serve as a gamma ray detector, but has yet to demonstrate its full potential. We show that by applying growth techniques tailored to reduce defects, the spectral performance of this promising semiconductor can be realized. Gamma ray spectra from >100 keV source emissions are now obtained from high quality Sb:BiI_3 bulk crystals with limited concentrations of defects (point and extended). The spectra acquired in these high quality crystals feature photopeaks with resolution of 2.2% at 662 keV. Infrared microscopy is used to compare the local microstructure between radiation sensitive and non-responsive crystals. This work demonstrates that BiI_3 can be prepared in melt-grown detector-grade samples with superior quality and can acquire the spectra from a variety of gamma ray sources.

Investigation of defects in Cu(In,Ga)S{sub 2} and Cu(In,Ga)Se{sub 2} solar cells by space charge spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Riediger, Julia; Ohland, Joerg; Knipper, Martin; Parisi, Juergen; Riedel, Ingo [Thin Film Photovoltaics, Energy- and Semiconductor Research Laboratory, University of Oldenburg, D-26111 Oldenburg (Germany); Meeder, Alexander [Soltecture GmbH, 12487 Berlin (Germany)

2012-07-01

If deep defect states in the absorber of a solar cell act as recombination centers, they may limit the carrier lifetime and thus the open circuit voltage. This is related to the defect's activation energy and spatial position. In this study the defect landscape of chalcopyrite thin film solar cells with varied absorber composition was investigated by space charge spectroscopy. The absorber layer in Cu(In,Ga)S{sub 2} samples arises from rapid thermal process (RTP) in sulfur vapor while Cu(In,Ga)Se{sub 2} absorbers were processed via co-evaporation of the constituents. Several defect states were found by deep level spectroscopy (DLTS) and thermal admittance spectroscopy (TAS). With the knowledge of the defect activation energies we derived the spatial defect concentrations from (illuminated) capacitance-voltage (CV) measurements and discuss the results for both material systems. To identify the often discussed ''N1'' defect, the measurements were repeated after annealing and changes in the defect spectra were evaluated.

Precise Wavelengths and Energy Levels for the Spectra of Cr I, Mn I, and Mn III, and Branching Fractions for the Spectra of Fe II and Cr II

Science.gov (United States)

Nave, Gillian

I propose to measure wavelengths and energy levels for the spectra of Cr I, Mn I, and Mn III covering the wavelength range 80 nm to 5500 nm, and oscillator strengths for Fe II and Cr II in the region 120 nm to 2500 nm. I shall also produce intensity calibrated atlases and linelists of the iron-neon and chromium-neon hollow cathode lamps that can be compared with astrophysical spectra. The spectra will be obtained from archival data from spectrometers at NIST and Kitt Peak National Observatory and additional experimental observations as necessary from Fourier transform (FT) and grating spectrometers at NIST. The wavelength uncertainty of the strong lines will be better than 1 part in 10^7. The radiometric calibration of the spectra will be improved in order to reduce the uncertainty of measured oscillator strengths in the near UV region and extend the wavelength range of these measurements down to 120 nm. These will complement and support the measurements of lifetimes and branching fractions by J. E. Lawler in the near UV region. An intensive effort by NIST and Imperial College London that was partly funded by previous NASA awards has resulted in comprehensive analyses of the spectra of Fe II, Cr II and Cu II, with similar analyses of Mn II, Ni II, and Sc II underway. The species included in this proposal will complete the analysis of the first two ionization stages of the elements titanium through nickel using the same techniques, and add the spectrum of Mn III - one of the most important doubly-ionized elements. The elements Cr I and Mn I give large numbers of spectral lines in spectra of cool stars and important absorption lines in the interstellar medium. The spectrum of Mn III is important in chemically peculiar stars and can often only be studied in the UV region. Analyses of many stellar spectra depend on comprehensive analyses of iron-group elements and are hampered by incomplete spectroscopic data. As a result of many decades of work by the group at the

Structure, Raman spectra and defect chemistry modelling of conductive pyrochlore oxides

DEFF Research Database (Denmark)

Poulsen, F.W.; Glerup, M.; Holtappels, P.

2000-01-01

-O(x) and V-O on the O site, interstitial oxygens O-i", and delocalised electrons and electron holes. Four mass action law expressions govern such a model. The defect model can rationalise why home-valent doping, i.e. substitution of Zr(4+) by Ce(4+), can lead to an increase in ionic conductivity...

Comparative ultraviolet action spectra (254-320 nm) of five wild-type eukaryotic microorganisms and Escherichia coli

International Nuclear Information System (INIS)

Calkins, J.; Wheeler, J.S.; Keller, C.I.; Colley, E.; Hazle, J.D.

1988-01-01

The action spectra of five eukaryotic organisms and the prokaryote, Escherichia coli, were examined over the wavelength range, 254-320 nm. Both the repair competent and three repair defective strains (E. coli, Caenorhabditis elegans, Saccharomyces) were examined. Tetrahymena pyriformis action spectra were performed with and without the excision repair inhibitor caffeine present. Others have observed that lethality, mutation, and the production of pyrimidine dimers show much the same wavelength dependence as DNA absorption. The results presented here demonstrate several action spectra which deviate from the DNA absorption spectra. Ultraviolet sensitization ratios (repair competent/repair defective) were also examined and were shown to change over the wavelength range. These findings suggest that DNA may not be the only important chromophore leading to cell death in the uv wavelength range studied. Since uv-B is of major importance in solar uv damage, these findings may also yield important implications for solar uv studies

100 MeV silver ions induced defects and modifications in silica glass

Energy Technology Data Exchange (ETDEWEB)

Jadhav, Vijay S.; Deore, Avinash V.; Dahiwale, S.S. [Department of Physics, University of Pune, Pune 411007 (India); Kanjilal, D. [Inter University Accelerator Centre, New Delhi 110067 (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 411007 (India); Dhole, S.D., E-mail: sanjay@physics.unipune.ac.in [Department of Physics, University of Pune, Pune 411007 (India)

2014-07-15

Highlights: •Study of silver ion induced defects and modifications in silica glass. •Variation in oxygen deficiency centres (ODA-II) and nonbridging oxygen hole centres (NBOHC). •Study of structural damage in terms of Urbach energy. -- Abstract: A few silica glass samples having 1 cm{sup 2} area and 0.1 cm thickness were irradiated with 100 MeV energy Ag{sup 7+} ions for the fluences ranging from 1 × 10{sup 12} ions/cm{sup 2} to 5 × 10{sup 13} ions/cm{sup 2}. The optical properties and the corresponding induced defects were characterised by the techniques such as UV–Visible, Photoluminescence (PL), Fourier transform infrared (FTIR), and Electron spin resonance (ESR) spectroscopy. The UV–Visible absorption spectra show two peaks, one at 5 eV and another weak peak at 5.8 eV. A peak observed at 5.0 eV corresponds to B{sub 2} band (oxygen deficiency in SiO{sub 2} network) and the peak at 5.8 eV is due to the paramagnetic defects like E′ centre. The intensities of these peaks found to be increased with increase in ion fluence. It attributes to the increase in the concentration of E′ centres and B{sub 2} band respectively. In addition, the optical band gap energy, Urbach energy and the defects concentration have been calculated using Urbach plot. The optical band gap found to be decreased from 4.65 eV to 4.39 eV and the Urbach energy found to be increased from 60 meV to 162 meV. The defect concentration of nonbridging oxygen hole centres (NBOHC) and E′ centres are found to be increased to 1.69 × 10{sup 13} cm{sup −3} and 3.134 × 10{sup 14} cm{sup −3} respectively. In PL spectra, the peak appeared at 1.92 eV and 2.7 eV envisage the defects of nonbridging oxygen hole centres and B{sub 2α} oxygen deficient centres respectively. ESR spectra also confirms the existence of E′ and NBOHC centres. FTIR spectra shows scissioning of Si-O-Si bonds and the formation of Si-H and Si-OH bonds, which supports to the co-existence of the defects induced by Ag

Increased Elemental Specificity of Positron Annihilation Spectra

International Nuclear Information System (INIS)

Asoka-Kumar, P.; Alatalo, M.; Ghosh, V.J.; Kruseman, A.C.; Nielsen, B.; Lynn, K.G.

1996-01-01

Positron annihilation spectroscopy (PAS) is a sensitive probe for studying the electronic structure of defects in solids. We show that the high-momentum part of the Doppler-broadened annihilation spectra can be used to distinguish different elements. This is achieved by using a new two-detector coincidence system to examine the line shape variations originating from high-momentum core electrons. Because the core electrons retain their atomic character even when atoms form a solid, these results can be directly compared to simple theoretical predictions. The new approach adds increased elemental specificity to the PAS technique, and is useful in studying the elemental variations around a defect site. copyright 1996 The American Physical Society

Defect dynamics in Li substituted nanocrystalline ZnO: A spectroscopic analysis

Energy Technology Data Exchange (ETDEWEB)

Ghosh, S., E-mail: sghoshphysics@gmail.com [Department of Material Science, Indian Association for the Cultivation of Science, 2A and 2B Raja S.C. Mullick Road, Jadavpur, Kolkata 700032 (India); Nambissan, P.M.G.; Thapa, S. [Applied Nuclear Physics Division, Saha Institute of Nuclear Physics, Sector 1, Block AF, Bidhannagar, Kolkata 700064 (India); Mandal, K. [Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700098 (India)

2014-12-01

Very recently, vacancy-type defects have been found to play a major role in stabilizing d{sup 0} ferromagnetism in various low dimensional ZnO systems. In this context, the evolution of vacancy-type defects within the ZnO nanocrystals due to the doping of ZnO by alkali metal lithium (Li) is investigated using X-ray photoelectron (XPS), photoluminescence (PL) and positron annihilation spectroscopy (PAS). Li-doping is found to have significant effects in modifying the vacancy-type defects, especially the Zn vacancy (V{sub Zn}) defects within the ZnO lattice. XPS measurement indicated that initially the Li{sup 1+} ions substitute at Zn{sup 2+} sites, but when Li concentration exceeds 7 at%, excess Li starts to move through the interstitial sites. The increase in positron lifetime components and the lineshape S-parameter obtained from coincident Doppler broadening spectra with Li-doping indicated an enhancement of V{sub Zn} defect concentration within the doped ZnO lattice. The vacancy type defects, initially of the predominant configuration V{sub Zn+O+Zn} got reduced to neutral ZnO divacancies due to the partial recombination by the doped Li{sup 1+} ions but, when the doping concentration exceeded 7 at% and Li{sup 1+} ions started migrating to the interstitials, positron diffusion is partly impeded and this results in reduced probability of annihilation. PL spectra have shown intense green and yellow-orange emission due to the stabilization of a large number of V{sub Zn} defects and Li substitutional (Li{sub Zn}) defects respectively. Hence Li can be a very useful dopant in stabilizing and modifying significant amount of Zn vacancy-defects which can play a useful role in determining the material behavior.

Luminescence Properties of Surface Radiation-Induced Defects in Lithium Fluoride

Science.gov (United States)

Voitovich, A. P.; Kalinov, V. S.; Martynovich, E. F.; Novikov, A. N.; Runets, L. P.; Stupak, A. P.

2013-11-01

Luminescence and luminescence excitation spectra are recorded for surface radiation-induced defects in lithium fluoride at temperatures of 77 and 293 K. The presence of three bands with relatively small intensity differences is a distinctive feature of the excitation spectrum. These bands are found to belong to the same type of defects. The positions of the peaks and the widths of the absorption and luminescence bands for these defects are determined. The luminescence decay time is measured. All the measured characteristics of these surface defects differ from those of previously known defects induced by radiation in the bulk of the crystals. It is found that the luminescence of surface defects in an ensemble of nanocrystals with different orientations is not polarized. The number of anion vacancies in the surface defects is estimated using the polarization measurements. It is shown that radiative scattering distorts the intensity ratios of the luminescence excitation bands located in different spectral regions.

Diode characteristics and residual deep-level defects of p+n abrupt junctions fabricated by rapid thermal annealing of boron implanted silicon

International Nuclear Information System (INIS)

Usami, A.; Katayama, M.; Wada, T.; Tokuda, Y.

1987-01-01

p + n diodes were fabricated by rapid thermal annealing (RTA) of boron implanted silicon in the annealing temperature range 700-1100 0 C for around 7 s, and the RTA temperature dependence of electrical characteristics of these diodes was studied. Deep-level transient spectroscopy (DLTS) measurements were made to evaluate residual deep-level defects in the n-type bulk. Three electron traps were observed in p + n diodes fabricated by RTA at 700 0 C. It was considered that these three traps were residual point defects near the tail of the implantation damage after RTA. Residual defect concentrations increased in the range 700-900 0 C and decreased in the range 1000-1100 0 C. The growth of defects in the bulk was ascribed to the diffusion of defects from the implanted layer during RTA. Concentrations of electron traps observed in p + n diodes fabricated by RTA at 1100 0 C were approx. 10 12 cm -3 . It was found that these residual deep-level defects observed by DLTS were inefficient generation-recombination centres since the reverse current was independent of the RTA temperatures. (author)

Production behavior of irradiation defects in solid breeder materials

Energy Technology Data Exchange (ETDEWEB)

Moriyama, Hirotake; Moritani, Kimikazu [Kyoto Univ. (Japan)

1998-03-01

The irradiation effects in solid breeder materials are important for the performance assessment of fusion reactor blanket systems. For a clearer understanding of such effects, we have studied the production behavior of irradiation defects in some lithium ceramics by an in-situ luminescence measurement technique under ion beam irradiation. The luminescence spectra were measured at different temperatures, and the temperature-transient behaviors of luminescence intensity were also measured. The production mechanisms of irradiation defects were discussed on the basis of the observations. (author)

Anti-resonance scattering at defect levels in the quantum conductance of a one-dimensional system

Science.gov (United States)

Sun, Z. Z.; Wang, Y. P.; Wang, X. R.

2002-03-01

For the ballistic quantum transport, the conductance of one channel is quantized to a value of 2e^2/h described by the Landauer formula. In the presence of defects, electrons will be scattered by these defects. Thus the conductance will deviate from the values of the quantized conductance. We show that an anti-resonance scattering can occur when an extra defect level is introduced into a conduction band. At the anti-resonance scattering, exact one quantum conductance is destroyed. The conductance takes a non-zero value when the Fermi energy is away from the anti-resonance scattering. The result is consistent with recent numerical calculations given by H. J. Choi et al. (Phys. Rev. Lett. 84, 2917(2000)) and P. L. McEuen et al. (Phys. Rev. Lett. 83, 5098(1999)).

Anomalous behaviors of E1/E2 deep level defects in 6H silicon carbide

International Nuclear Information System (INIS)

Chen, X.D.; Ling, C.C.; Gong, M.; Fung, S.; Beling, C.D.; Brauer, G.; Anwand, W.; Skorupa, W.

2005-01-01

Deep level defects E 1 /E 2 were observed in He-implanted, 0.3 and 1.7 MeV electron-irradiated n-type 6H-SiC. Similar to others' results, the behaviors of E 1 and E 2 (like the peak intensity ratio, the annealing behaviors or the introduction rates) often varied from sample to sample. This anomalous result is not expected of E 1 /E 2 being usually considered arising from the same defect located at the cubic and hexagonal sites respectively. The present study shows that this anomaly is due to another DLTS peak overlapping with the E 1 /E 2 . The activation energy and the capture cross section of this defect are E C -0.31 eV and σ∼8x10 -14 cm 2 , respectively

Investigation of radiation defects in InSb formed by charged high energy nuclear particles

International Nuclear Information System (INIS)

Vikhlij, G.A.; Karpenko, A.Ya.; Litovchenko, P.G.; Tarabrova, L.I.; Groza, A.A.

1990-01-01

A possibility of creation of high concentrations of radiation defects in the bulk of InSb samples by 47 MeV protons and 80 MeV alpha particles is considered. Dose dependences of electroconductivity, optical absorption spectra as well as temperature and field relations of galvanomagnetic properties of samples with defects are investigated. Annealing stages and electrical properties of defects annealed at these stages are determined. 17 refs.; 7 figs

Bibliography on atomic energy levels and spectra. Special pub., Jul 1971--Jun 1975

International Nuclear Information System (INIS)

Hagan, L.

1977-01-01

This is the first supplement to the NBS Special Publication 363, 'Bibliography on Atomic Energy Levels and Spectra, July 1968 through June 1971,' and it covers the most recent literature from July 1971 through June 1975. It contains approximately 2150 references classified by subject for individual atoms and atomic ions. A number index identifies the references. An author index is included. References included contain data on energy levels, classified lines, wavelengths, Zeeman effect, Stark effect, hyperfine structure, isotope shift, ionization potentials, or theory which gives results for specific atoms or atomic ions

Estimation of sea level muon energy spectrum at high latitude from the latest primary nucleon spectra near the top of the atmosphere

CERN Document Server

Haldar, T K; Bhattacharya, D P; 10.1023/A:1024822518795

2003-01-01

Vertical muon energy spectra at sea level have been estimated from a directly measured primary cosmic-ray nucleon spectrum. The hadronic energy moments have been calculated from the CERN LEBC EHS data on the Lorentz invariant cross-section results on pp to pi /sup +or-/X and pp to K/sup +or-/X inclusive reactions and are duly corrected for A-A collisions. Finally, the sea level muon energy spectra have been calculated from the decay of conventional mesons, using standard formulation. The estimated muon spectra are found to be in good agreement with the directly measured muon spectra obtained from different experiments. (32 refs).

Deep-level defects in semiconductors: studies by magnetic resonance

International Nuclear Information System (INIS)

Ammerlaan, C.A.J.

1983-01-01

This work is divided into two parts. In the first one, the following topics are discussed: paramagnetic centers in semiconductors, principles of magnetic resonance, spin-Hamiltonian, g-tensor, hyperfine interaction, magnetic resonance spectrometer. In the second part it is dicussed defects studied by magnetic resonance including vacancy and divacancy in silicon, iron in silicon, nitrogen in diamond and antisite defects in III-V compounds. (A.C.A.S.) [pt

Extended defects in insulating MgAl2O4 ceramic materials studied by PALS methods

International Nuclear Information System (INIS)

Klym, H; Ingram, A; Shpotyuk, O; Filipecki, J; Hadzaman, I

2010-01-01

Extended positron-trapping defects in technological modified insulating nanoporous MgAl 2 O 4 ceramics are characterized by positron annihilation lifetime spectroscopy. The results are achieved using three-component fitting procedure with arbitrary lifetimes applied to treatment of measured spectra. Within this approach, the first component in the lifetime spectra reflects microstructure specificity of the spinel structure, the second component responsible to extended defects near intergranual boundaries and the third component correspond to ortho-positronium 'pick-off' decaying in nanopores of ceramics. It is shown that in ceramics of different technological modifications the same type of positron traps prevails.

Effects of crystal defects on the diffuse scattering of X-rays

International Nuclear Information System (INIS)

Kremser, R.

1974-01-01

This thesis concerns with the influence of crystal defects in germanium-drifted silicium and in α=quartz on the intensity of the diffuse X-ray scattering. The experiments were performed at low and high temperatures to show the effect of the atomic thermal motion on the intensity of the diffuse maxima. The comparison of the results for pure silicium and for the germanium-drifted crystal gives information about the relation between the frequency-spectra and the defects of the drifted silicium. For α-quarts it was not possible to relate unequivocally the observed changes in the intensity to individual defects. (C.R.)

[Prevalence of birth defects according to the level of care in two hospitals, Cali, Colombia, 2012-2013].

Science.gov (United States)

Pachajoa, Harry; Villota, Vania A; Cruz, Luz Marina; Ariza, Yoseth

2015-01-01

Birth defects are morphologic alterations diagnosed prenatal or postnatally. Surveillance systems have been used to estimate the prevalence in high complexity care centers; however, the variation of the prevalence among different complexity care centers remains unknown. To compare the prevalence of birth defects among two different complexity care centers in Cali, Colombia. A descriptive hospital-based study following the methodology of the Latin American Collaborative Study of Congenital Malformations was conducted during 20 months in a medium complexity hospital and a high complexity hospital. During the study period, 7,140 births were attended of which 225 had at least one birth defect. The prevalence of these was of 1.7% (IC95% 1.3-2.0) and 7.4% (IC95% 6.2-8.7) for the medium complexity hospital and the high complexity hospital, respectively. The highest frequencies for the high complexity care center were: ventricular septal defect, 10%; congenital hydronephrosis, 7%; abdominal wall defects, 6%, and hydrocephalus, 5%, while for the medium complexity were: polydactyly, 15%; preauricular skin tags, 8%; congenital talipes equino varus, 7%, and hemangioma, 6%. The prevalence of birth defects among different complexity care centers varies in quantity, type and severity of the anomaly diagnosed. The surveillance of birth defects is a useful tool for any level of care. It allows estimating more accurately the prevalence of the city, as well being a base for the planning and targeting of resources according to the prevalence of different congenital defects.

Measurement of discrete energy-level spectra in individual chemically synthesized gold nanoparticles

DEFF Research Database (Denmark)

Kuemmeth, Ferdinand; Bolotin, Kirill I; Shi, Su-Fei

2008-01-01

We form single-electron transistors from individual chemically synthesized gold nanoparticles, 5-15 nm in diameter, with monolayers of organic molecules serving as tunnel barriers. These devices allow us to measure the discrete electronic energy levels of individual gold nanoparticles that are......, by virtue of chemical synthesis, well-defined in their composition, size and shape. We show that the nanoparticles are nonmagnetic and have spectra in good accord with random-matrix-theory predictions taking into account strong spin-orbit coupling....

Amino acids interacting with defected carbon nanotubes: ab initio calculations

Directory of Open Access Journals (Sweden)

M. Darvish Ganji

2016-09-01

Full Text Available The adsorption of a number of amino acids on a defected single-walled carbon nanotube (SWCNT is investigated by using the density-functional theory (DFT calculations. The adsorption energies and equilibrium distances are calculated for various configurations such as amino acid attaching to defect sites heptagon, pentagon and hexagon in defective tube and also for several molecular orientations with respect to the nanotube surface. The results showed that amino acids prefer to be physisorbed on the outer surface of the defected nanotube with different interaction strength following the hierarchy histidine > glycine > phenylalanine > cysteine. Comparing these findings with those obtained for perfect SWCNTs reveals that the adsorption energy of the amino acids increase for adsorption onto defected CNTs. The adsorption nature has also been evaluated by means of electronics structures analysis within the Mulliken population and DOS spectra for the interacting entities.

Parameters of radiation defects in GaP and GaAssub(1-x)Psub(x) with thermostimulated current measurements

International Nuclear Information System (INIS)

Brajlovskij, E.Yu.; Marchuk, N.D.

1980-01-01

Introduction of point defects in gallium phosphide crystals and GaAssub(1-x)Psub(x) solid solutions under the action of 1 MeV electrons is studied by TSC method on Schottky barriers. The TSC spectra processing using the computer is given. In GaP crystals the dominant electron and hole traps are D-centers (Esub(c)-1.24 eV) and M-centers (Esub(v)+1.43 eV). The received level spectrum explains the compensation of conductivity of n- and p-lGaP under irradiation. It is shown that main defects observed in electron irradiated GaP are most likely phosphorus vacancies (D-center)and gallium vacancies (M-center)

Biomechanical properties: effects of low-level laser therapy and Biosilicate® on tibial bone defects in osteopenic rats.

Science.gov (United States)

Fangel, Renan; Bossini, Paulo S; Renno, Ana Cláudia; Granito, Renata N; Wang, Charles C; Nonaka, Keico O; Driusso, Patricia; Parizotto, Nivaldo A; Oishi, Jorge

2014-12-30

The aim of this study was to investigate the effects of laser therapy and Biosilicate® on the biomechanical properties of bone callus in osteopenic rats. Fifty female Wistar rats were equally divided into 5 groups (n=10/group): osteopenic rats with intact tibiae (SC); osteopenic rats with unfilled and untreated tibial bone defects (OC); osteopenic rats whose bone defects were treated with Biosilicate® (B); osteopenic rats whose bone defects were treated with 830-nm laser, at 120 J/cm2 (L120) and osteopenic rats whose bone defects were treated with Biosilicate® and 830-nm laser, at 120 J/cm2 (BL120). Ovariectomy (OVX) was used to induce osteopenia. A non-critical bone defect was created on the tibia of the osteopenic animals 8 weeks after OVX. In Biosilicate® groups, bone defects were completely filled with the biomaterial. For the laser therapy, an 830-nm laser, 120 J/cm2 was used. On day 14 postsurgery, rats were euthanized, and tibiae were removed for biomechanical analysis. Maximal load and energy absorption were higher in groups B and BL120, according to the indentation test. Animals submitted to low-level laser therapy (LLLT) did not show any significant biomechanical improvement, but the association between Biosilicate® and LLLT was shown to be efficient to enhance callus biomechanical properties. Conversely, no differences were found between study groups in the bending test. Biosilicate® alone or in association with low level laser therapy improves biomechanical properties of tibial bone callus in osteopenic rats.

Study of defectiveness in orthosilicates of alkali earth metals by the method of radiospectroscopy

International Nuclear Information System (INIS)

Bikbau, M.Ya.; Akramov, R.

1978-01-01

With a view to investigating the defectiveness of the orthosilicates of alkali-earth metals, the spectra of the electronic paramagnetic resonance of γ-irradiated orthosilicates of Be, Mg, Ca, Sr and Ba have been examined. The spectra are obtained at 77 and 298 K. The maximum concentration and stability of paramagnetic centers is observed on the defects of the crystalline-optical structure of orthosilicates of Sr and Ba, as well as of β-Ca 2 SiO 4 . This is attributed to a great defectiveness of those compounds. On the basis of an analysis of the possible nature of electron and hole paramagnetic centers that are formed in the compounds examined by means of γ-irradiation, it has been suggested to form the electron centers of [M 2+ ]sub(n)sup(e) type. The formation of hole centers has been shown in aluminium used as addition

Estimates of Uncertainties in Analysis of Positron Lifetime Spectra for Metals

DEFF Research Database (Denmark)

Eldrup, Morten Mostgaard; Huang, Y. M.; McKee, B. T. A.

1978-01-01

by excluding the peak regions of the spectra from the analysis. The influence of using incorrect source-surface components in the analysis may on the other hand be reduced by including the peak regions of the spectra. A main conclusion of the work is that extreme caution should be exercised to avoid......The effects of uncertainties and errors in various constraints used in the analysis of multi-component life-time spectra of positrons annihilating in metals containing defects have been investigated in detail using computer simulated decay spectra and subsequent analysis. It is found...... that the errors in the fitted values of the main components lifetimes and intensities introduced from incorrect values of the instrumental resolution function and of the source-surface components can easily exceed the statistical uncertainties. The effect of an incorrect resolution function may be reduced...

The cyclopropene radical cation: Rovibrational level structure at low energies from high-resolution photoelectron spectra

Energy Technology Data Exchange (ETDEWEB)

Vasilatou, K.; Michaud, J. M.; Baykusheva, D.; Grassi, G.; Merkt, F. [Laboratorium für Physikalische Chemie, ETH Zürich, CH-8093 Zurich (Switzerland)

2014-08-14

The cyclopropene radical cation (c-C{sub 3}H{sub 4}{sup +}) is an important but poorly characterized three-membered-ring hydrocarbon. We report on a measurement of the high-resolution photoelectron and photoionization spectra of cyclopropene and several deuterated isotopomers, from which we have determined the rovibrational energy level structure of the X{sup ~+} {sup 2}B{sub 2} ground electronic state of c-C{sub 3}H{sub 4}{sup +} at low energies for the first time. The synthesis of the partially deuterated isotopomers always resulted in mixtures of several isotopomers, differing in their number of D atoms and in the location of these atoms, so that the photoelectron spectra of deuterated samples are superpositions of the spectra of several isotopomers. The rotationally resolved spectra indicate a C{sub 2v}-symmetric R{sub 0} structure for the ground electronic state of c-C{sub 3}H{sub 4}{sup +}. Two vibrational modes of c-C{sub 3}H{sub 4}{sup +} are found to have vibrational wave numbers below 300 cm{sup −1}, which is surprising for such a small cyclic hydrocarbon. The analysis of the isotopic shifts of the vibrational levels enabled the assignment of the lowest-frequency mode (fundamental wave number of ≈110 cm{sup −1} in c-C{sub 3}H{sub 4}{sup +}) to the CH{sub 2} torsional mode (ν{sub 8}{sup +}, A{sub 2} symmetry) and of the second-lowest-frequency mode (≈210 cm{sup −1} in c-C{sub 3}H{sub 4}{sup +}) to a mode combining a CH out-of-plane with a CH{sub 2} rocking motion (ν{sub 15}{sup +}, B{sub 2} symmetry). The potential energy along the CH{sub 2} torsional coordinate is flat near the equilibrium structure and leads to a pronounced anharmonicity.

Application of ENDOR-induced electron spin resonance to the study of point defects in solids

International Nuclear Information System (INIS)

Niklas, J.R.; Spaeth, J.M.

1980-01-01

The technique of ENDOR-induced ESR (EI-ESR) is applied to the investigation of several point defects in insulating crystals. It is shown that the lineshape of the EI-ESR spectrum depends on the ENDOR line used for the experiment. The EI-ESR technique allows the separation of overlapping ESR spectra in the presence of several defects. New applications are the selection of spin states and the determination of relative signs of spin-Hamiltonian parameters, the selection of centre orientations and the assignment of nuclei in complex ENDOR spectra, and the determination of quadrupole interactions which are not resolved in the ENDOR spectrum. (author)

Tuning optical properties of opal photonic crystals by structural defects engineering

Science.gov (United States)

di Stasio, F.; Cucini, M.; Berti, L.; Comoretto, D.; Abbotto, A.; Bellotto, L.; Manfredi, N.; Marinzi, C.

2009-06-01

We report on the preparation and optical characterization of three dimensional colloidal photonic crystal (PhC) containing an engineered planar defect embedding photoactive push-pull dyes. Free standing polystyrene films having thickness between 0.6 and 3 mm doped with different dipolar chromophores were prepared. These films were sandwiched between two artificial opals creating a PhC structure with planar defect. The system was characterized by reflectance at normal incidence angle (R), variable angle transmittance (T) and photoluminescence spectroscopy (PL) Evidence of defect states were observed in T and R spectra which allow the light to propagate for selected frequencies within the pseudogap (stop band).

Productivity, trophic levels and size spectra of zooplankton in northern Norwegian shelf regions

Science.gov (United States)

Zhou, Meng; Tande, Kurt S.; Zhu, Yiwu; Basedow, Sünnje

2009-10-01

Many studies have been conducted in northern Norwegian shelf regions to assess distributions and abundances of zooplankton in the last decade using towed Scanfish-conductivity, temperature and depth sensors (CTD)-optical plankton counter (OPC), and plankton nets. Significant progresses have been made in understanding dominant species, life histories and behavior, and in using size-structured data to identify dominant species in a certain size range. Using these Scanfish-CTD-OPC data, the analysis of zooplankton community size structures, compositions and their relationships with water types is made along the shelf region from Lofoten, North Cape to Varangerfjorden. From the relationships between the water types and zooplankton communities, the transports and exchanges of zooplankton communities between the Norwegian Coastal and Norwegian Atlantic Waters in regions near Malangsgrunnen and Nordvestbanken are examined. The biovolume (biomass) spectra are further analyzed for the productivity, trophic levels and seasonality of communities in these regions, indicating a steeper slope of the biovolume spectrum for a community dominated by herbivorous species in spring and a flatter slope for a community dominated by carnivorous-omnivorous species in winter. The comparison with the zooplankton biovolume spectra obtained in areas west of Antarctic Peninsula is made to examine and understand the differences in the zooplankton biovolume spectra, their trophic dynamics and potential human impacts between different regions.

GRABGAM: A Gamma Analysis Code for Ultra-Low-Level HPGe SPECTRA

Energy Technology Data Exchange (ETDEWEB)

Winn, W.G.

1999-07-28

The GRABGAM code has been developed for analysis of ultra-low-level HPGe gamma spectra. The code employs three different size filters for the peak search, where the largest filter provides best sensitivity for identifying low-level peaks and the smallest filter has the best resolution for distinguishing peaks within a multiplet. GRABGAM basically generates an integral probability F-function for each singlet or multiplet peak analysis, bypassing the usual peak fitting analysis for a differential f-function probability model. Because F is defined by the peak data, statistical limitations for peak fitting are avoided; however, the F-function does provide generic values for peak centroid, full width at half maximum, and tail that are consistent with a Gaussian formalism. GRABGAM has successfully analyzed over 10,000 customer samples, and it interfaces with a variety of supplementary codes for deriving detector efficiencies, backgrounds, and quality checks.

Resonant Raman and FTIR spectra of carbon doped GaN

Science.gov (United States)

Ito, S.; Kobayashi, H.; Araki, K.; Suzuki, K.; Sawaki, N.; Yamashita, K.; Honda, Y.; Amano, H.

2015-03-01

Intentionally carbon (C) doped (0 0 0 1)GaN was grown using C2H2 on a sapphire substrate by metalorganic vapor phase epitaxy. Optical spectra of the heavily doped samples were investigated at room temperature. In Raman spectra excited by the 325 nm line of a He-Cd laser, multiple LO phonon scattering signals up to 7th order were observed, and the A1(LO) phonon energy was determined to be 737.5 cm-1 (91.45 meV). In infrared reflectance spectra, on the other hand, a local vibration mode was found at 777.5 cm-1, which is attributed to a Ga-C bond in the GaN matrix suggesting that the C sits on an N site (CN). In spite of the strong suggestion of CN, the samples did not show p-type conduction. Possible origin of the carrier compensation is discussed in relation to the enhancement of defect related yellow luminescence in the photoluminescence spectra.

Modification of ferromagnetic nanostripe dynamic behavior by edge defects

Science.gov (United States)

Hu, Bo; Zhao, Chunwang; Li, Yulian

2018-03-01

The dynamic spectra of ferromagnetic nanostripes with different edge defects are investigated using the three-dimensional object-oriented micromagnetic framework code. Two main resonance peaks are found in nanostripes due to nonuniformity of the static magnetization patterns. The higher peak can be identified by the precession of magnetization in the middle part of the nanostripes. The lower one can be identified by the sample end part. The values of two precession frequencies and linewidths can be modified using the edge defect to tune the magnetization of different parts of samples, which is important and useful in magnetic storage devices.

Toward Intelligent Software Defect Detection

Science.gov (United States)

Benson, Markland J.

2011-01-01

Source code level software defect detection has gone from state of the art to a software engineering best practice. Automated code analysis tools streamline many of the aspects of formal code inspections but have the drawback of being difficult to construct and either prone to false positives or severely limited in the set of defects that can be detected. Machine learning technology provides the promise of learning software defects by example, easing construction of detectors and broadening the range of defects that can be found. Pinpointing software defects with the same level of granularity as prominent source code analysis tools distinguishes this research from past efforts, which focused on analyzing software engineering metrics data with granularity limited to that of a particular function rather than a line of code.

Freely-migrating defects: Their production and interaction with cascade remnants

International Nuclear Information System (INIS)

Rehn, L.E.; Wiedersich, H.

1991-05-01

Many microstructural changes that occur during irradiation are driven primarily by freely-migrating defects, i.e. those defects which escape from nascent cascades to migrate over distances that are large relative to typical cascade dimensions. Several measurements during irradiation at elevated temperatures have shown that the survival rate of freely-migrating defects decreases much more strongly with increasing primary recoil energy than does the survival rate for defects generated at liquid helium temperatures. For typical fission or fusion recoil spectra, and for heavy-ion bombardment, the fraction of defects that migrate long-distances is apparently only ∼1% of the calculated dpa. This small surviving fraction of freely-migrating defects results at least partially from additional intracascade recombination at elevated temperatures. However, cascade remnants, e.g., vacancy and interstitial clusters, also contribute by enhancing intercascade defect annihilation. A recently developed rate-theory approach is used to discuss the relative importance of intra- and intercascade recombination to the survival rate of freely-migrating defects. Within the validity of certain simplifying assumptions, the additional sink density provided by defect clusters produced directly within individual cascades can explain the difference between a defect survival rate of about 30% for low dose, low temperature irradiations with heavy ions, and a survival rate of only ∼1% for freely-migrating defects at elevated temperatures. The status of our current understanding of freely-migrating defects, including remaining unanswered questions, is also discussed. 33 refs., 5 figs

Extended defects in insulating MgAl{sub 2}O{sub 4} ceramic materials studied by PALS methods

Energy Technology Data Exchange (ETDEWEB)

Klym, H; Ingram, A; Shpotyuk, O; Filipecki, J; Hadzaman, I, E-mail: klymha@yahoo.com, E-mail: shpotyuk@novas.lviv.ua

2010-11-15

Extended positron-trapping defects in technological modified insulating nanoporous MgAl{sub 2}O{sub 4} ceramics are characterized by positron annihilation lifetime spectroscopy. The results are achieved using three-component fitting procedure with arbitrary lifetimes applied to treatment of measured spectra. Within this approach, the first component in the lifetime spectra reflects microstructure specificity of the spinel structure, the second component responsible to extended defects near intergranual boundaries and the third component correspond to ortho-positronium 'pick-off' decaying in nanopores of ceramics. It is shown that in ceramics of different technological modifications the same type of positron traps prevails.

Resonance fluorescence spectra of three-level atoms in a squeezed vacuum

International Nuclear Information System (INIS)

Ferguson, M.R.; Ficek, Z.; Dalton, B.J.

1996-01-01

The fluorescence field from one of the two allowed transitions in a three-level atom can sense squeezed fluctuations of a vacuum field coupled to the other transition. We examine the fluorescence spectra of strongly driven three-level atoms in Λ, V, and cascade configurations in which one of the two one-photon transitions is coupled to a finite-bandwidth squeezed vacuum field, when the bandwidth is much smaller than the difference in the atomic transition frequencies, though much larger than atomic decay rates and Rabi frequencies of the driving fields. The driving fields are on one-photon resonance, and the squeezed vacuum field is generated by a degenerate parameter oscillator. Details are only given for the Λ configuration. The extension to the V and cascade configurations is straightforward. We find that in all configurations the fluorescence spectra of the transition not coupled to the squeezed vacuum field are composed of five lines, one central and two pairs of sidebands, with intensities and widths strongly influenced by the squeezed vacuum field. However, only the central component and the outer sidebands exhibit a dependence on the squeezing phase. We also examine the fluorescence spectrum for the cascade configuration with a squeezed vacuum field on resonance with the two-photon transition between the ground and the most excited states and now generated by a nondegenerate parametric oscillator. In this case, where the squeezed vacuum field can be made coupled to both transitions, all spectral lines depend on the squeezing phase. The spectral features are explained in terms of the dressed-atom model of the system. We show that the coherent mixing of the atomic states by the strong driving fields modifies transition rates between the dressed states, which results in the selective phase dependence of the spectral features. copyright 1996 The American Physical Society

WMAP constraints on inflationary models with global defects

International Nuclear Information System (INIS)

Bevis, Neil; Hindmarsh, Mark; Kunz, Martin

2004-01-01

We use the cosmic microwave background angular power spectra to place upper limits on the degree to which global defects may have aided cosmic structure formation. We explore this under the inflationary paradigm, but with the addition of textures resulting from the breaking of a global O(4) symmetry during the early stages of the Universe. As a measure of their contribution, we use the fraction of the temperature power spectrum that is attributed to the defects at a multipole of 10. However, we find a parameter degeneracy enabling a fit to the first-year WMAP data to be made even with a significant defect fraction. This degeneracy involves the baryon fraction and the Hubble constant, plus the normalization and tilt of the primordial power spectrum. Hence, constraints on these cosmological parameters are weakened. Combining the WMAP data with a constraint on the physical baryon fraction from big bang nucleosynthesis calculations and high-redshift deuterium abundance limits the extent of the degeneracy and gives an upper bound on the defect fraction of 0.13 (95% confidence)

Defect production in ceramics

Energy Technology Data Exchange (ETDEWEB)

Zinkle, S.J. [Oak Ridge National Lab., TN (United States); Kinoshita, C. [Kyushu Univ. (Japan)

1997-08-01

A review is given of several important defect production and accumulation parameters for irradiated ceramics. Materials covered in this review include alumina, magnesia, spinel silicon carbide, silicon nitride, aluminum nitride and diamond. Whereas threshold displacement energies for many ceramics are known within a reasonable level of uncertainty (with notable exceptions being AIN and Si{sub 3}N{sub 4}), relatively little information exists on the equally important parameters of surviving defect fraction (defect production efficiency) and point defect migration energies for most ceramics. Very little fundamental displacement damage information is available for nitride ceramics. The role of subthreshold irradiation on defect migration and microstructural evolution is also briefly discussed.

Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams

International Nuclear Information System (INIS)

Uedono, Akira; Watanabe, Tomohito; Kimura, Shogo; Zhang, Yang; Lozac'h, Mickael; Sang, Liwen; Sumiya, Masatomo; Ishibashi, Shoji; Oshima, Nagayasu; Suzuki, Ryoichi

2013-01-01

Native defects in In x Ga 1−x N layers grown by metalorganic chemical vapor deposition were studied using monoenergetic positron beams. Measurements of Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons for a 200-nm-thick In 0.13 Ga 0.87 N layer showed that vacancy-type defects were introduced by InN alloying, and the major species of such defects was identified as complexes between a cation vacancy and nitrogen vacancies. The presence of the defects correlated with lattice relaxation of the In 0.13 Ga 0.87 N layer and the increase in photon emissions from donor-acceptor-pair recombination. The species of native defects in In 0.06 Ga 0.94 N layers was the same but its concentration was decreased by decreasing the InN composition. With the layer thickness increased from 120 nm to 360 nm, a defect-rich region was introduced in the subsurface region (<160 nm), which can be associated with layer growth with the relaxation of compressive stress

Imaging atomic-level random walk of a point defect in graphene

Science.gov (United States)

Kotakoski, Jani; Mangler, Clemens; Meyer, Jannik C.

2014-05-01

Deviations from the perfect atomic arrangements in crystals play an important role in affecting their properties. Similarly, diffusion of such deviations is behind many microstructural changes in solids. However, observation of point defect diffusion is hindered both by the difficulties related to direct imaging of non-periodic structures and by the timescales involved in the diffusion process. Here, instead of imaging thermal diffusion, we stimulate and follow the migration of a divacancy through graphene lattice using a scanning transmission electron microscope operated at 60 kV. The beam-activated process happens on a timescale that allows us to capture a significant part of the structural transformations and trajectory of the defect. The low voltage combined with ultra-high vacuum conditions ensure that the defect remains stable over long image sequences, which allows us for the first time to directly follow the diffusion of a point defect in a crystalline material.

Temperature dependent analysis of three classes of fluorescence spectra from p-6P nanofiber films

DEFF Research Database (Denmark)

Balzer, F.; Pogantsch, Alexander; Rubahn, Horst-Günter

2009-01-01

devices, given that the spectra are reproducible for varying surface temperatures. A detailed investigation as a function of surface temperature variation from 300 to 30 K reveals three classes of spectra: (a) spectra with well resolved excitonic peaks, which shift 35meV to the blue with decreasing...... temperature, (b) similar spectra with an additional intermediate broadening around 150 K, and (c) excitonic spectra similar to (b), but with a green defect emission band. Quantitative fitting of type (a) spectra results in an  exciton–phonon coupling factor of 80 ± 10meV and an average phonon temperature of Θ...... = 670 ± 70 K. The Huang–Rhys factor decreases linearly from 1.2 at 300 K to 1.0 at 30 K. Fitting of type (b) spectra reveals that the apparent intermediate temperature broadening is due to additional fluorescence peaks, the relative importance of which increasing with decreasing temperature....

A comparative study on defect estimation using XPS and Raman spectroscopy in few layer nanographitic structures.

Science.gov (United States)

Ganesan, K; Ghosh, Subrata; Gopala Krishna, Nanda; Ilango, S; Kamruddin, M; Tyagi, A K

2016-08-10

Defects in planar and vertically oriented nanographitic structures (NGSs) synthesized by plasma enhanced chemical vapor deposition (PECVD) have been investigated using Raman and X-ray photoelectron spectroscopy. While Raman spectra reveal the dominance of vacancy and boundary type defects respectively in vertical and planar NGSs, XPS provides additional information on vacancy related defect peaks in the C 1s spectrum, which originate from non-conjugated carbon atoms in the hexagonal lattice. Although an excellent correlation prevails between these two techniques, our results show that estimation of surface defects by XPS is more accurate than Raman analysis. Nuances of these techniques are discussed in the context of assessing defects in nanographitic structures.

Magnetic signature of surface defects at nanodiamonds

Energy Technology Data Exchange (ETDEWEB)

Vollmers, Nora Jenny; Gerstmann, Uwe; Schmidt, Wolf Gero [Theoretische Physik, Universitaet Paderborn (Germany)

2011-07-01

The n-type doping of diamond has been a long-standing issue, which recently gained attention in the context of nanodiamonds. Attempts of doping with nitrogen failed to result in the Electron paramagnetic Resonance (EPR) fingerprints expected from bulk material. Instead, the nanodiamond signals show a much larger deviation from the free-electron g-value and are believed to be related to intrinsic, carbon inherited defects. However, the absence of the bulk-like EPR spectra does not mean that nitrogen is not incorporated at all. The N atoms could be built in predominantly at or at least close to the surfaces yielding EPR spectra, very different from those measured in the bulk. In this work, we elucidate the situation by investigating the magnetic signature of paramagnetic defects in the nanodiamonds. We use the gauge-including projector augmented plane wave (GI-PAW) approach to calculate the hyperfine splittings and the elements of the electronic g-tensor. Taking the C(100) surface as a first model system, a possible contribution of nitrogen is discussed by comparing EPR parameters for different N incorporation depths: Incorporated directly at the surface, N gives rise to surface states similar to intrinsic carbon dangling bond-like states. Otherwise N is able to introduce surface conductivity as demonstrated by calculated effective mass tensors.

Many-Body Theory of Proton-Generated Point Defects for Losses of Electron Energy and Photons in Quantum Wells

Science.gov (United States)

Huang, Danhong; Iurov, Andrii; Gao, Fei; Gumbs, Godfrey; Cardimona, D. A.

2018-02-01

The effects of point defects on the loss of either energies of ballistic electron beams or incident photons are studied by using a many-body theory in a multi-quantum-well system. This theory includes the defect-induced vertex correction to a bare polarization function of electrons within the ladder approximation, and the intralayer and interlayer screening of defect-electron interactions is also taken into account in the random-phase approximation. The numerical results of defect effects on both energy-loss and optical-absorption spectra are presented and analyzed for various defect densities, numbers of quantum wells, and wave vectors. The diffusion-reaction equation is employed for calculating distributions of point defects in a layered structure. For completeness, the production rate for Frenkel-pair defects and their initial concentration are obtained based on atomic-level molecular-dynamics simulations. By combining the defect-effect, diffusion-reaction, and molecular-dynamics models with an available space-weather-forecast model, it will be possible in the future to enable specific designing for electronic and optoelectronic quantum devices that will be operated in space with radiation-hardening protection and, therefore, effectively extend the lifetime of these satellite onboard electronic and optoelectronic devices. Specifically, this theory can lead to a better characterization of quantum-well photodetectors not only for high quantum efficiency and low dark current density but also for radiation tolerance or mitigating the effects of the radiation.

Estimates of uncertainties in analysis of positron lifetime spectra for metals

International Nuclear Information System (INIS)

Eldrup, M.; Huang, Y.M.; McKee, B.T.A.

1978-01-01

The effects of uncertainties and errors in various constraints used in the analysis of multi-component life-time spectra of positrons annihilating in metals containing defects have been investigated in detail using computer simulated decay spectra and subsequent analysis. It is found that the errors in the fitted values of the main component lifetimes and intensities introduced from incorrect values of the instrumental resolution function and off the source-surface components can easily exceed the statistic uncertainties. The effect of an incorrect resolution function may be reduced by excluding the peak regions of the spectra from the analysis. The influence of using incorrect source-surface components in the analysis may on the other hand be reduced by including the peak regions of the spectra. A main conclusion of the work is that extreme caution should be exercised to avoid introducing large errors through the constraints used in the analysis of experimental lifetime data. (orig.) [de

Calibration of matrix-assisted laser desorption/ionization time-of-flight peptide mass fingerprinting spectra

DEFF Research Database (Denmark)

Hjernø, Karin; Højrup, Peter

2007-01-01

This chapter describes a number of aspects important for calibration of matrix-assisted laser desorption/ionization time-of-flight spectra prior to peptide mass fingerprinting searches. Both multipoint internal calibration and mass defect-based calibration is illustrated. The chapter describes ho...

Defect identification using positrons

International Nuclear Information System (INIS)

Beling, C.D.; Fung, S.

2001-01-01

The current use of the lifetime and Doppler broadening techniques in defect identification is demonstrated with two studies, the first being the identification of carbon vacancy in n-6H SiC through lifetime spectroscopy, and the second the production of de-hydrogenated voids in α-Si:H through light soaking. Some less conventional ideas are presented for more specific defect identification, namely (i) the amalgamation of lifetime and Doppler techniques with conventional deep level transient spectroscopy in what may be called ''positron-deep level transient spectroscopy'', and (ii) the extraction of more spatial information on vacancy defects by means of what may be called ''Fourier transform Doppler broadening of annihilation radiation spectroscopy'' (orig.)

Effects of ZnO Seed Layers Prepared with Various Precursor Concentrations on Structural and Defect Emission Properties of ZnO Nanorods Grown by Hydrothermal Method

Energy Technology Data Exchange (ETDEWEB)

Kim, Soaram; Nam, Giwoong; Leem, Jae-Young; Kim, Yangsoo [Inje University, Gimhae (Korea, Republic of); Kim, Ghun Sik; Yoon, Sung Pil [Korea Institute of Science and Technology, Seoul (Korea, Republic of)

2013-07-15

ZnO nanorods were grown by a hydrothermal method on ZnO seed layers that had previously been prepared from solutions containing various precursor concentrations. The effects of the ZnO seed layers prepared with various precursor concentrations on the structural and defect emissions of the ZnO nanorods were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL) spectroscopy. The surface morphology of the ZnO seed layers changed with an increasing precursor concentration, and the diameters and densities of the ZnO nanorods depended on the morphologies of the ZnO seed layers. The ZnO seed layers prepared with various precursor concentrations affected the residual stress in the nanorods grown on the seed layers, the intensity and full widths at half maximum of the 2-theta angle in the XRD spectra for the nanorods, and the intensity and position of the defect emission peak in deep-level emission (DLE) PL spectra for the ZnO nanorods.

Optical properties of GaSb(001)-c(2 x 6): The role of surface antisite defects

Energy Technology Data Exchange (ETDEWEB)

Hogan, Conor; Del Sole, Rodolfo [Department of Physics, CNR-INFM-SMC, Roma (Italy); European Theoretical Spectroscopy Facility (ETSF), University of Rome ' ' Tor Vergata' ' , Roma (Italy); Magri, Rita [Centro S3-CNR-Istituto di Nanoscienze, Modena (Italy); Department of Physics, University of Modena and Reggio Emilia, Modena (Italy)

2010-08-15

We consider the formation of surface antisite defects on a previously proposed model for the GaSb(001)-c(2 x 6) surface. Based on ab initio total energy calculations, we show how these defects stabilize the otherwise metallic surface and how their formation is driven by the excess charge associated with the Sb-rich surface conditions. The surface-sensitive optical technique of reflectance anisotropy spectroscopy is shown to be crucial for detecting the defects, and computation of spectra yields a good agreement with experiment when defects are included in the surface reconstruction. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Analysis of structure and defects in thin silicon films deposited from hydrogen diluted silane

International Nuclear Information System (INIS)

Elzakker, G. van; Nadazdy, V.; Tichelaar, F.D.; Metselaar, J.W.; Zeman, M.

2006-01-01

Thin silicon layers have been deposited from silane diluted with hydrogen. The dilution ratio R (R = [H 2 ]/[SiH 4 ]) has been varied between R = 0 and R = 40. The structural properties of Si:H films have been studied using transmission electron microscopy imaging and Raman spectroscopy. The phase evolution from the amorphous phase into the mixed and eventually microcrystalline phase strongly depends on the hydrogen dilution. The initiation of the microcrystalline growth occurs between R = 20 and R = 25. The phase transition becomes more abrupt with increasing hydrogen dilution. Optoelectronic properties of the layers have been determined. Increasing hydrogen dilution results in films with increasing effective defect density and Urbach energy, which is related to inhomogeneous growth. The charge deep-level transient spectroscopy technique (Q-DLTS) was applied for the first time on hydrogen diluted thin silicon films in order to investigate the energy distribution of the defect states in these layers as a function of the dilution ratio R. The Q-DLTS spectra indicate a difference in defect-state distribution when the films evolve from the amorphous phase into the microcrystalline phase

High-level damage saturation below amorphisation in ion implanted β-Ga{sub 2}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Wendler, Elke, E-mail: elke.wendler@uni-jena.de; Treiber, Enrico; Baldauf, Julia; Wolf, Steffen; Ronning, Carsten

2016-07-15

Ion implantation induced effects were studied in single crystalline 〈0 1 0〉 oriented bulk β-Ga{sub 2}O{sub 3} at room temperature using P, Ar and Sn ions with ion fluences ranging from 1 × 10{sup 11} up to 2 × 10{sup 15} cm{sup −2}. Rutherford backscattering spectrometry in channelling configuration (RBS) using He ions of various ion energies was applied for damage analysis. Clear damage peaks are visible in the RBS spectra. The concentration of displaced lattice atoms in the maximum of the distribution (as deduced from the channelling spectra) increases with increasing ion fluence up to a saturation value of about 90%. Once this level is reached, further implantation only leads to a broadening of the distribution, while the concentration remains at 90%. The ion fluence dependence of maximum damage concentration is represented by a common model assuming two types of defects: point defects (which can recombine with those already existing from previous ion impacts) and non-recombinable damage clusters. The damage produced dominantly consists of randomly displaced lattice atoms, which indicates point defects and point defect complexes. For higher damage levels also a contribution of correlated displaced lattice atoms can be identified. This suggests that the damage clusters are not amorphous. A possible explanation of the observed results could be the formation of another phase of Ga{sub 2}O{sub 3}.

Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

International Nuclear Information System (INIS)

Lee, H.S.; Yamaguchi, M.; Ekins-Daukes, N. J.; Khan, A.; Takamoto, T.; Agui, T.; Kamimura, K.; Kaneiwa, M.; Imaizumi, M.; Ohshima, T.; Itoh, H.

2005-01-01

Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al 0.08 Ga 0.92 ) 0.52 In 0.48 P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm -1 , which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E ν +0.90±0.05 eV) was observed. The changes in carrier concentrations (Δp) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm -1 , of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm -1 , in p-AlInGaP. From the minority-carrier injection annealing (100 mA/cm 2 ), the annealing activation energy of H2 defect is ΔE=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (V p -P i ). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center

Dechanneling measurements of defect depth profiles and effective cross-channel distribution of misaligned atoms in ion irradiated gold

International Nuclear Information System (INIS)

Pronko, P.P.

1975-01-01

Defect depth profiles for self ion and He + irradiated gold are obtained from single and multiple scatter dechanneling analysis in single crystal gold films. Quantitative defect densities are obtained through use of atomic scattering cross sections. Integral damage profiles are extracted from the dechanneling spectra and subsequently differentiated to yield the volume concentration of defects as a function of depth. Results from the self ion irradiations suggest that incident ions produce defect distributions across depths much greater than predicted by random stopping theory. This is in agreement with TEM observations of others. Comparison of the experimental profiles is made with theoretical vacancy distributions predicted by defect diffusion in a radiation environment. Similarities are observed for the low fluence irradiations suggesting that profile characteristics may be controlled by rapid migration and loss of interstitials to the film surfaces during irradiation. Information on the across-channel distribution of misaligned atoms in the damaged films is obtained with the steady increase of transverse energy model applied to the dechanneling spectra. A predominance of slight misalignment is observed with no contribution to dechanneling coming from atoms displaced significantly close to the center of the channels. This is in keeping with what is expected for crystal distortions caused by the strain fields associated with vacancy cluster defects

Estimation of the sea level muon spectra at different zenith angles below 10 TeV energy

CERN Document Server

Mitra, M; Pal, P B; Bhattacharya, D P

2001-01-01

The moderate energy primary cosmic ray nucleon spectrum has been calculated from the direct measurements of Webber et al. (1987), Seo et al. (1992) and Menn et al. (1997). Along with the other results surveyed by Swordy (1993). Using these directly measured primary mass composition results all particle primary nucleon energy spectrum has been constructed using superposition model to estimate the energy spectra of muons from the decay of the cosmic ray non-prompt and prompt mesons in the atmosphere. The Z-factors have been estimated from the CERN LEBC-EHS on the Lorentz invariant cross section results on pp to pi /sup +or-/X and pp to K/sup +or-/X inclusive reactions and FNAL data on pi /sup +or-/p to pi /sup +or-/X reactions, and duly corrected for A-A collisions. Using these Z-factors the meson energy spectra in the atmosphere have been calculated. The sea level muon energy spectra at zenith angles 0 degrees , 45 degrees , 72 degrees , and 75 degrees have been derived from the decay of non-prompt mesons by a...

Intrinsic and defect related luminescence in double oxide films of Al–Hf–O system under soft X-ray and VUV excitation

Energy Technology Data Exchange (ETDEWEB)

Pustovarov, V.A., E-mail: vpustovarov@bk.ru [Ural Federal University, 19 Mira Street, 620002 Yekaterinburg (Russian Federation); Smirnova, T.P.; Lebedev, M.S. [Nikolaev Institute of Inorganic Chemistry, Siberian Branch of Russian Academy of Science, Novosibirsk 630090 (Russian Federation); Gritsenko, V.A. [Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090 (Russian Federation); Novosibirsk National Research University, 2 Pirogova Street, 630090 Novosibirsk (Russian Federation); Kirm, M. [Institute of Physics, University of Tartu, 14c Ravila, 50411 Tartu (Estonia)

2016-02-15

Low temperature time-resolved luminescence spectra in the region of 2.5–9.5 eV under soft X-ray excitation as well as time-resolved luminescence excitation spectra in the UV–VUV region (3.7–12 eV) of solid solutions Al{sub x}Hf{sub y}O{sub 1−x−y} thin films were investigated. The values of x and Al/Hf ratio were determined from X-ray photoelectron srectroscopy data. Hafnia films and films mixed with alumina were grown in a flow-type chemical vapor deposition reactor with argon as a carrier gas. In addition, pure alumina films were prepared by the atomic layer deposition method. A strong emission band with the peak position at 4.4 eV and with the decay time in the μs-range was revealed for pure hafnia films. The emission peak at 7.74 eV with short nanosecond decay kinetics was observed in the luminescence spectra for pure alumina films. These emission bands were ascribed to the radiative decay of self-trapped excitons (an intrinsic luminescence) in pure HfO{sub 2} and Al{sub 2}O{sub 3} films, respectively. Along with intrinsic host emission, defect related luminescence bands with a larger Stokes shift were observed. In the emission spectra of the solid solution films (x=4; 17; 20 at%) the intrinsic emission bands are quenched and only the luminescence of defects (an anion vacancies) was observed. Based on transformation of the luminescence spectra and ns-luminescence decay kinetics, as well as changes in the time-resolved luminescence and luminescence excitation spectra, the relaxation processes in the films of solid solution are discussed. - Highlights: • Low temperature time−resolved PL spectra were studied in a broad range (1.5−9.5 eV). • We carried out a luminescent control of point defects (anion vacancies) and self−trapped excitons. • We observed photoluminescence of excitons bound on defects. • We observed changes of photoluminescence properties with varying ratio components.

Reconstruction of structural damage based on reflection intensity spectra of fiber Bragg gratings

International Nuclear Information System (INIS)

Huang, Guojun; Wei, Changben; Chen, Shiyuan; Yang, Guowei

2014-01-01

We present an approach for structural damage reconstruction based on the reflection intensity spectra of fiber Bragg gratings (FBGs). Our approach incorporates the finite element method, transfer matrix (T-matrix), and genetic algorithm to solve the inverse photo-elastic problem of damage reconstruction, i.e. to identify the location, size, and shape of a defect. By introducing a parameterized characterization of the damage information, the inverse photo-elastic problem is reduced to an optimization problem, and a relevant computational scheme was developed. The scheme iteratively searches for the solution to the corresponding direct photo-elastic problem until the simulated and measured (or target) reflection intensity spectra of the FBGs near the defect coincide within a prescribed error. Proof-of-concept validations of our approach were performed numerically and experimentally using both holed and cracked plate samples as typical cases of plane-stress problems. The damage identifiability was simulated by changing the deployment of the FBG sensors, including the total number of sensors and their distance to the defect. Both the numerical and experimental results demonstrate that our approach is effective and promising. It provides us with a photo-elastic method for developing a remote, automatic damage-imaging technique that substantially improves damage identification for structural health monitoring. (paper)

First-principles study of crystalline and amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} and the effects of stoichiometric defects

Energy Technology Data Exchange (ETDEWEB)

Caravati, S; Bernasconi, M [Dipartimento di Scienza dei Materiali, Universita di Milano-Bicocca, Via R Cozzi 53, I-20125, Milano (Italy); Kuehne, T D; Parrinello, M [Department of Chemistry and Applied Biosciences, ETH Zurich, USI Campus, Via Giuseppe Buffi 13, CH-6900 Lugano (Switzerland); Krack, M [Paul Scherrer Institut, CH-5232 Villigen (Switzerland)], E-mail: marco.bernasconi@mater.unimib.it

2009-06-24

Based on ab initio molecular dynamics simulations, we investigated the structural, electronic and vibrational properties of cubic and amorphous Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) phase change material, focusing in particular on the effects of defects in stoichiometry on the electronic properties. It turned out Ge/Sb deficiencies (excess) in the cubic phase induce a shift of the Fermi level inside the valence (conduction) bands. In contrast, the amorphous network is flexible enough to accommodate defects in stoichiometry, keeping the Fermi level pinned at the center of the bandgap (at zero temperature). Changes in the structural and electronic properties induced by the use of hybrid functionals (HSE03, PBE0) instead of gradient corrected functionals (PBE) are addressed as well. Analysis of vibrational spectra and Debye-Waller factors of cubic and amorphous GST is also presented.

Identification of defects in undoped semi-insulating InP by positron lifetime

International Nuclear Information System (INIS)

Mao Weidong; Wang Shaojie; Wang Zhu

2001-01-01

Positron lifetime measurements, carried out over the temperature range of 10-300 K, have been used to investigate defects in two undoped semi-insulating InP samples. The positron lifetime spectra were analysed by both PATFIT and MELT techniques. The results at room temperature reveal a positron lifetime of around 273 ps, which is associated with indium vacancies V In or V In -hydrogen complexes. The positron average lifetime is temperature dependent and decreases with increasing temperature at the beginning (≤ 80 K and ≤ 120 K), and then remains unchanged, which is attributed to the influence of negative vacancies and detrapping of the positron from those negative ions of Mg, Zn, Ag and Ca with ionization level (1-)

First-principles study of structural, electronic, and optical properties of surface defects in GaAs(001) - β2(2x4)

Science.gov (United States)

Bacuyag, Dhonny; Escaño, Mary Clare Sison; David, Melanie; Tani, Masahiko

2018-06-01

We performed first-principles calculations based on density functional theory (DFT) to investigate the role of point defects in the structural, electronic, and optical properties of the GaAs(001)- β2(2x4). In terms of structural properties, AsGa is the most stable defect structure, consistent with experiments. With respect to the electronic structure, band structures revealed the existence of sub-band and midgap states for all defects. The induced sub-bands and midgap states originated from the redistributions of charges towards these defects and neighboring atoms. The presence of these point defects introduced deep energy levels characteristic of EB3 (0.97 eV), EL4 (0.52 eV), and EL2 (0.82 eV) for AsGa, GaAs, GaV, respectively. The optical properties are found to be strongly related to these induced gap states. The calculated onset values in the absorption spectra, corresponding to the energy gaps, confirmed the absorption below the known bulk band gap of 1.43 eV. These support the possible two-step photoabsorption mediated by midgap states as observed in experiments.

Holographic Chern-Simons defects

International Nuclear Information System (INIS)

Fujita, Mitsutoshi; Melby-Thompson, Charles M.; Meyer, René; Sugimoto, Shigeki

2016-01-01

We study SU(N) Yang-Mills-Chern-Simons theory in the presence of defects that shift the Chern-Simons level from a holographic point of view by embedding the system in string theory. The model is a D3-D7 system in Type IIB string theory, whose gravity dual is given by the AdS soliton background with probe D7 branes attaching to the AdS boundary along the defects. We holographically renormalize the free energy of the defect system with sources, from which we obtain the correlation functions for certain operators naturally associated to these defects. We find interesting phase transitions when the separation of the defects as well as the temperature are varied. We also discuss some implications for the Fractional Quantum Hall Effect and for 2-dimensional QCD.

A study of defects in diamond

International Nuclear Information System (INIS)

Hunt, D.C.

1999-01-01

Defects, intrinsic and extrinsic, in natural and synthetic diamond, have been studied using Electron Paramagnetic Resonance (EPR) and optical absorption techniques. EPR measurements have been used in conjunction with infrared absorption to identify the defect-induced one-phonon infrared spectra produced by ionised single substitutional nitrogen, N s + . This N s + spectrum is characterised by a sharp peak at the Raman energy, 1332 cm -1 , accompanied by several broader resonances at 950(5), 1050(5), and 1095(5) cm -1 . Detailed concentration measurements show that a concentration of 5.5(5) ppm gives rise to an absorption of 1 cm -1 at 1332 cm -1 . The optical absorption band ND1, identified as the negative vacancy (V - ), is frequently used by diamond spectroscopists to measure the concentration of V - . Isoya has identified V - in the EPR spectra of irradiated diamond. The accuracy of EPR in determining concentrations, has been used to correlate the integrated absorption of the ND1 zero-phonon line to the concentration of V - centres. The parameter derived from this correlation is ∼16 times smaller than the previously accepted value obtained by indirect methods. A systematic study has been made - using EPR and optical absorption techniques - of synthetic type IIa diamonds, which have been irradiated with 2 MeV electrons in a specially developed dewar, allowing irradiation down to a measured sample temperature of 100K. Measurement of defect creation rates of the neutral vacancy and EPR defects, show a radical difference in the production rate of the EPR defect R2 between irradiation with the sample held at 100K and 350K. At 100K its production rate is 1.1(1) cm -1 , ∼10 times greater that at 350K. Observation of the di- -split interstitial (Ri) after irradiation at 100K proves the self-interstitial in diamond must be mobile at 100K, under the conditions of irradiation. Further study of the properties of the R2 defect (the most dominant EPR after electron

Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation

International Nuclear Information System (INIS)

Benzohra, Mohamed; Olivie, Francois; Idrissi-Benzohra, Malika; Ketata, Kaouther; Ketata, Mohamed

2002-01-01

It is well established that low energy B + ion implantation into Ge- (or Si) implantation pre-amorphised silicon allows ultra-shallow p + n junctions formation. However, this process is known to generate defects such as dislocation loops, vacancies and interstitials which can act as vehicles to different mechanisms inducing electrically active levels into the silicon bulk. The junctions studied have been obtained using 3 keV/10 15 cm -2 B + implantation into Ge-implantation pre-amorphised substrates and into a reference crystalline substrate. Accurate measurements using deep level transient spectroscopy (DLTS) and isothermal transient capacitance ΔC(t,T) were performed to characterise these levels. Such knowledge is crucial to improve the device characteristics. In order to sweep the silicon band gap, various experimental conditions were considered. The analysis of DLTS spectra have first showed three deep levels associated to secondary induced defects. Their concentration profiles were derived from isothermal transient capacitance at depths up to 3.5 μm into the silicon bulk and allowed us to detect a new deep level. The evolution of such defect distribution in correlation with the technological steps is discussed. The end of range (EOR) defect influence on electrical activity of secondary induced defects in ultra-shallow p + n diodes is clearly demonstrated

Defect detection based on extreme edge of defective region histogram

Directory of Open Access Journals (Sweden)

Zouhir Wakaf

2018-01-01

Full Text Available Automatic thresholding has been used by many applications in image processing and pattern recognition systems. Specific attention was given during inspection for quality control purposes in various industries like steel processing and textile manufacturing. Automatic thresholding problem has been addressed well by the commonly used Otsu method, which provides suitable results for thresholding images based on a histogram of bimodal distribution. However, the Otsu method fails when the histogram is unimodal or close to unimodal. Defects have different shapes and sizes, ranging from very small to large. The gray-level distributions of the image histogram can vary between unimodal and multimodal. Furthermore, Otsu-revised methods, like the valley-emphasis method and the background histogram mode extents, which overcome the drawbacks of the Otsu method, require preprocessing steps and fail to use the general threshold for multimodal defects. This study proposes a new automatic thresholding algorithm based on the acquisition of the defective region histogram and the selection of its extreme edge as the threshold value to segment all defective objects in the foreground from the image background. To evaluate the proposed defect-detection method, common standard images for experimentation were used. Experimental results of the proposed method show that the proposed method outperforms the current methods in terms of defect detection.

Theoretical Analysis of Rydberg and Autoionizing State Spectra of Antimony

Institute of Scientific and Technical Information of China (English)

Shuang-Fei Lv; Ruohong Li; Feng-Dong Jia; Xiao-Kang Li; Jens Lassen; Zhi-Ping Zhong

2017-01-01

We calculate the Rydberg and autoionization Rydberg spectra of antimony (Sb) from first principles by relativistic multichannel theory within the framework of multichannel quantum defect theory.Our calculation can be used to classify and assign the atomic states described in recently reported three Rydberg series and four autoionizing states.The perturbation effects on line intensity,variation and line profile are discussed.Assignments of the perturber states and autoionizing states are presented.

Effect of Er doping on optical transmission and EL spectra of (Zn, Cd)S:Cu phosphors

International Nuclear Information System (INIS)

Patil, P.K.; Nandgave, J.K.; Lawangar Pawar, R.D.

1991-01-01

Powder phosphors((Znsub(0.4)Cdsub(0.6))S)doped with Cu and Er have been prepared under the inert atmosphere of argon. The optical transmission spectra of Cu doped phosphors have been investigated and explained on the basis of copper associated defect states. The improvement of optical transmission of the phosphors due to Er doping has been reported and explained. The EL emission spectrum of (Znsub(0.4)Cdsub(0.6))S:Cu:Er phosphors exhibits two broad bands characteristic of Cu. The absence of characteristic Er bands has been explained as an effect of thermal quenching of Er donor levels. (author). 9 refs., 2 figs

Optimal Fluorescence Waveband Determination for Detecting Defective Cherry Tomatoes Using a Fluorescence Excitation-Emission Matrix

Directory of Open Access Journals (Sweden)

In-Suck Baek

2014-11-01

Full Text Available A multi-spectral fluorescence imaging technique was used to detect defective cherry tomatoes. The fluorescence excitation and emission matrix was used to measure for defects, sound surface and stem areas to determine the optimal fluorescence excitation and emission wavelengths for discrimination. Two-way ANOVA revealed the optimal excitation wavelength for detecting defect areas was 410 nm. Principal component analysis (PCA was applied to the fluorescence emission spectra of all regions at 410 nm excitation to determine the emission wavelengths for defect detection. The major emission wavelengths were 688 nm and 506 nm for the detection. Fluorescence images combined with the determined emission wavebands demonstrated the feasibility of detecting defective cherry tomatoes with >98% accuracy. Multi-spectral fluorescence imaging has potential utility in non-destructive quality sorting of cherry tomatoes.

Positron trapping defects in free-volume investigation of Ge–Ga–S–CsCl glasses

International Nuclear Information System (INIS)

Klym, H.; Ingram, A.; Shpotyuk, O.; Hotra, O.; Popov, A.I.

2016-01-01

Evolution of free-volume positron trapping defects caused by crystallization process in (80GeS_2–20Ga_2S_3)_1_0_0_−_x(CsCl)_x, 0 ≤ x ≤ 15 chalcogenide-chalcohalide glasses was studied by positron annihilation lifetime technique. It is established that CsCl additives in Ge–Ga–S glassy matrix transform defect-related component spectra, indicating that the agglomeration of free-volume voids occurs in initial and crystallized (80GeS_2–20Ga_2S_3)_1_0_0_−_x(CsCl)_x, 0 ≤ x ≤ 10 glasses. Void fragmentation in (80GeS_2–20Ga_2S_3)_8_5(CsCl)_1_5 glass can be associated with loosing of their inner structure. Full crystallization in each of these glasses corresponds to the formation of defect-related voids. These trends are confirmed by positron-positronium decomposition algorithm. It is shown, that CsCl additives result in white shift in the visible regions in transmission spectra. The γ-irradiation of 80GeS_2–20Ga_2S_3 base glass leads to slight long-wavelength shift of the fundamental optical absorption edge and decreasing of transmission speaks in favor of possible formation of additional defects in glasses and their darkening. - Highlights: • CsCl additives in Ge–Ga–S glassy matrix lead to the agglomeration of voids. • Full crystallization of Ge–Ga–S–CsCl glasses corresponds to the formation of defect voids. • Gamma-irradiation of glass stimulates the creation of additional defects and darkening.

Ultrasonographic views for the screening of congenital heart defects in the first level of care

International Nuclear Information System (INIS)

Garcia Guevara, Carlos; Arenciabia Faife, Jakeline; Ley Vega, Lisset

2009-01-01

Congenital heart diseases are the main cause of infant mortality for congenital malformations in our country and they are the defects that more usually escape diagnosis in ultrasonographic screening, especially if we consider that associated risk factors call for a fetal echocardiogram are not identified in most pregnant women with fetuses affected with a heart disease. With this paper, we intend to bring within reach of both the specialists dedicated to this activity in primary care and the Masters in Genetic Counseling a review article about the principal aspects to be evaluated in each of the three echocardiography views that are used in Cuba as part of screening these defects, as well as the main signs of suspicion of congenital heart diseases that give reason for having a pregnant woman referred to the immediately higher level of care

Metastable defect response in CZTSSe from admittance spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Koeper, Mark J.; Hages, Charles J.; Li, Jian V.; Levi, Dean; Agrawal, Rakesh

2017-10-02

Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se)4 where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the device measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.

Moessbauer study of defects in molybdenum and chromium irradiated with ions

International Nuclear Information System (INIS)

Troyan, V.A.; Bogdanov, V.V.; Ivanyushkin, E.M.; Pen'kov, Yu.P.

1980-01-01

Effects of ion irradiation of monocrystalline molybdenum and polycrystalline chromium with Co-57 impurity were studied by Moessbauer effect. Molybdenum specimens were irradiated by He + ions at accelerators with 40 keV energy. Chromium specimens were irradiated by hydrogen ions with 1.2 MeV energy up to integral 2x10 17 -2x10 19 ion/cm 2 doses. It is shown, that defect introduction into the source matrix by irradiation results in change of gamma-resonance line form and effect value. The observed effects of defect influence on spectrum parameters are discussed. It is concluded, that study of Moessbauer spectra parameters of diluted Co-57 solutions in matrices of different metals permits to determine dynamics of movement of impurity atoms and defects in metals irradiated with ions [ru

ILT based defect simulation of inspection images accurately predicts mask defect printability on wafer

Science.gov (United States)

Deep, Prakash; Paninjath, Sankaranarayanan; Pereira, Mark; Buck, Peter

2016-05-01

printability of defects at wafer level and automates the process of defect dispositioning from images captured using high resolution inspection machine. It first eliminates false defects due to registration, focus errors, image capture errors and random noise caused during inspection. For the remaining real defects, actual mask-like contours are generated using the Calibre® ILT solution [1][2], which is enhanced to predict the actual mask contours from high resolution defect images. It enables accurate prediction of defect contours, which is not possible from images captured using inspection machine because some information is already lost due to optical effects. Calibre's simulation engine is used to generate images at wafer level using scanner optical conditions and mask-like contours as input. The tool then analyses simulated images and predicts defect printability. It automatically calculates maximum CD variation and decides which defects are severe to affect patterns on wafer. In this paper, we assess the printability of defects for the mask of advanced technology nodes. In particular, we will compare the recovered mask contours with contours extracted from SEM image of the mask and compare simulation results with AIMSTM for a variety of defects and patterns. The results of printability assessment and the accuracy of comparison are presented in this paper. We also suggest how this method can be extended to predict printability of defects identified on EUV photomasks.

Electronic and transport properties of zigzag carbon nanotubes with the presence of periodical antidot and boron/nitride doping defects

Science.gov (United States)

Zoghi, Milad; Yazdanpanah Goharrizi, Arash; Mirjalili, Seyed Mohammad; Kabir, M. Z.

2018-06-01

Electronic and transport properties of Carbon nanotubes (CNTs) are affected by the presence of physical or chemical defects in their structures. In this paper, we present novel platforms of defected zigzag CNTs (Z-CNTs) in which two topologies of antidot and Boron/Nitride (BN) doping defects are periodically imposed throughout the length of perfect tubes. Using the tight binding model and the non-equilibrium Green’s function method, it is realized that the quantum confinement of Z-CNTs is modified by the presence of such defects. This new quantum confinement results in the appearance of mini bands and mini gaps in the transmission spectra, as well as a modified band structure and band gap size. The modified band gap could be either larger or smaller than the intrinsic band gap of a perfect tube, which is determined by the category of Z-CNT. The in-depth analysis shows that the size of the modified band gap is the function of several factors consisting of: the radii of tube (D r), the distance between adjacent defects (d d), the utilized defect topology, and the kind of defect (antidot or BN doping). Furthermore, taking advantage of the tunable band gap size of Z-CNT with the presence of periodical defects, new platforms of defect-based Z-CNT resonant tunneling diode (RTD) are proposed for the first time. Our calculations demonstrate the apparition of resonances in transmission spectra and the negative differential resistance in the I-V characteristics for such RTD platforms.

Understanding the effect of surface/bulk defects on the photocatalytic activity of TiO2: anatase versus rutile.

Science.gov (United States)

Yan, Junqing; Wu, Guangjun; Guan, Naijia; Li, Landong; Li, Zhuoxin; Cao, Xingzhong

2013-07-14

The sole effect of surface/bulk defects of TiO2 samples on their photocatalytic activity was investigated. Nano-sized anatase and rutile TiO2 were prepared by hydrothermal method and their surface/bulk defects were adjusted simply by calcination at different temperatures, i.e. 400-700 °C. High temperature calcinations induced the growth of crystalline sizes and a decrease in the surface areas, while the crystalline phase and the exposed facets were kept unchanged during calcination, as indicated by the characterization results from XRD, Raman, nitrogen adsorption-desorption, TEM and UV-Vis spectra. The existence of surface/bulk defects in calcined TiO2 samples was confirmed by photoluminescence and XPS spectra, and the surface/bulk defect ratio was quantitatively analyzed according to positron annihilation results. The photocatalytic activity of calcined TiO2 samples was evaluated in the photocatalytic reforming of methanol and the photocatalytic oxidation of α-phenethyl alcohol. Based on the characterization and catalytic results, a direct correlation between the surface specific photocatalytic activity and the surface/bulk defect density ratio could be drawn for both anatase TiO2 and rutile TiO2. The surface defects of TiO2, i.e. oxygen vacancy clusters, could promote the separation of electron-hole pairs under irradiation, and therefore, enhance the activity during photocatalytic reaction.

On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation

Science.gov (United States)

Schmidt, Matthias; Wenckstern, Holger von; Pickenhain, Rainer; Grundmann, Marius

2012-09-01

Electronic defect states in a n-type conducting zinc oxide thin film sample were investigated by means of space charge spectroscopy focussing on levels in the midgap region as well as on hole traps. To overcome the experimental difficulties arising from the wide bandgap and the lack of p-type conduction, optical excitation was employed to measure the emission of trapped charge carriers from these levels. Therefore - besides deep-level transient spectroscopy measurements - photo-capacitance, optically chopped photo-current, minority carrier transient spectroscopy, and optical capacitance-voltage experiments were conducted. In doing so, a midgap level labelled T4, and hole traps labelled TH1 and TH2 were detected. In the case of T4 and TH1 the photo-ionisation cross-section spectra were determined.

A qualitative study of spin polarization effect in defect tuned Co/graphene/Co nanostructures

Science.gov (United States)

Mandal, Sumit; Saha, Shyamal K.

2014-10-01

Theoretical reports predict that in contact with a ferromagnetic giant spin, spin polarization evolves in defective graphene since defects in graphene act as local spin moments. We have synthesized different Co/graphene/Co nano spin valve like structures tuning the degree of defect applying ultrasonic vibration and characterized them by Raman spectroscopy. Initially with increasing ID/IG ratio in Raman spectra, antiferromagnetic coupling between the Co nanosheets on either sides of graphene enhances leading to betterment in spin transport through graphene. But for highest ID/IG, a totally new phenomenon called antiferro quadrupolar ordering (AFQ) takes place which eventually reduces the spin polarization effect.

Decreased blood riboflavin levels are correlated with defective expression of RFT2 gene in gastric cancer

Science.gov (United States)

Eli, Maynur; Li, De-Sheng; Zhang, Wei-Wei; Kong, Bing; Du, Chen-Song; Wumar, Maimaitiaili; Mamtimin, Batur; Sheyhidin, Ilyar; Hasim, Ayshamgul

2012-01-01

AIM: To investigate the relationship between blood riboflavin levels and riboflavin transporter 2 (RFT2) gene expression in gastric carcinoma (GC) development. METHODS: High-performance liquid chromatography was used to detect blood riboflavin levels in patients with GC. Real-time fluorogenic quantitative polymerase chain reaction and immunohistochemistry were used to analyze the expression of RFT2 mRNA and protein in samples from 60 GC patients consisting of both tumor and normal tissue. RESULTS: A significant decrease in the RFT2 mRNA levels was detected in GC samples compared with those in the normal mucous membrane (0.398 ± 0.149 vs 1.479 ± 0.587; P = 0.040). Tumors exhibited low RFT2 protein expression (75%, 16.7%, 8.3% and 0% for no RFT2 staining, weak staining, medium staining and strong staining, respectively), which was significantly lower than that in the normal mucous membrane (10%, 16.7%, 26.7% and 46.7% for no RFT2 staining, weak staining, medium staining and strong staining, respectively; P riboflavin levels were reverse correlated with development of GC (1.2000 ± 0.97 569 ng/mL in high tumor stage patients vs 2.5980 ± 1.31 129 ng/mL in low tumor stage patients; P riboflavin levels with defective expression of RFT2 protein was found in GC patients (χ2 = 2.619; P = 0.019). CONCLUSION: Defective expression of RFT2 is associated with the development of GC and this may represent a mechanism underlying the decreased plasma riboflavin levels in GC. PMID:22791947

Factors controlling the thermoluminescence spectra of rare earth doped calcium fluoride

Energy Technology Data Exchange (ETDEWEB)

Wang, Y., E-mail: wyfemail@gmail.com [School of Science, China University of Geosciences, Beijing 100083 (China); Zhao, Y. [School of Science, China University of Geosciences, Beijing 100083 (China); White, D. [Barnsley Hospital NHS Foundation Trust, Gawber Road, Barnsley S75 2EP (United Kingdom); Finch, A.A. [Department of Earth & Environmental Sciences, University of St Andrews, Fife KY16 9AL (United Kingdom); Townsend, P.D. [Physics Building, University of Sussex, Brighton BN1 9QH (United Kingdom)

2017-04-15

Thermoluminescence spectra of rare earth doped calcium fluoride samples, both powder and single crystal, were recorded over the temperature range from 25 K to 673 K. Although some broad band features exist, the spectra are dominated by the rare earth line transitions. The glow peak temperatures are slightly sensitive both to the ionic size of the dopants and the dopant concentration. By contrast, very considerable differences are generated by heat treatments, such as annealing followed by either fast or slow cooling. Comments are included on the reasons for such sensitivity in terms of association of dopant and intrinsic defect sites and why the results of dosimetry powder differ from those from single crystals.

Adsorbate reactivity and thermal mobility from simple modeling of high-resolution core-level spectra: application to O/Al(111)

International Nuclear Information System (INIS)

Schouborg, Jakob; Raarup, Merete K; Balling, Peter

2009-01-01

A high-resolution core-level spectroscopy investigation of the adsorption of oxygen on Al(111) at variable oxygen exposure demonstrates a low surface reactivity for an intensively cleaned surface. The threshold for oxide formation is as high as ∼200 L (langmuirs), at which point the coverage of the chemisorbed oxygen exceeds half a monolayer. A simple model is presented, using which it is possible to deduce the oxygen coverage from the core-level spectra and determine the initial sticking probability. For our data a value of 0.018 ± 0.004 is obtained. The changes in core-level spectra following low-temperature annealing of low-coverage O/Al(111) reflect the formation of gradually larger islands of oxygen atoms (Ostwald ripening). The island formation is consistent with a random-walk model from which the diffusion barrier can be deduced to be in the range of 0.80-0.90 eV.

Electronic structure of point defects in semiconductors

International Nuclear Information System (INIS)

Bruneval, Fabien

2014-01-01

This 'Habilitation a diriger des Recherches' memoir presents most of my scientific activities during the past 7 years, in the field of electronic structure calculations of defects in solids. Point defects (vacancies, interstitials, impurities) in functional materials are a key parameter to determine if these materials will actually fill the role they have been assigned or not. Indeed, the presence of defects cannot be avoided when the temperature is increased or when the material is subjected to external stresses, such as irradiation in the nuclear reactors and in artificial satellites with solar radiations. However, in many cases, defects are introduced in the materials on purpose to tune the electronic transport, optical or even magnetic properties. This procedure is called the doping of semiconductors, which is the foundation technique for transistors, diodes, or photovoltaic cells. However, doping is not always straightforward and unexpected features may occur, such as doping asymmetry or Fermi level pinning, which can only be explained by complex phenomena involving different types of defects or complexes of defects. In this context, the calculations of electronic structure ab initio is an ideal tool to complement the experimental observations, to gain the understanding of phenomena at the atomic level, and even to predict the properties of defects. The power of the ab initio calculations comes from their ability to describe any system of electrons and nuclei without any specific adjustment. But although there is a strong need for numerical simulations in this field, the ab initio calculations for defects are still under development as of today. The work presented in this memoir summarizes my contributions to methodological developments on this subject. These developments have followed two main tracks. The first topic is the better understanding of the unavoidable finite size effects. Indeed, defects in semiconductors or insulators are generally present in

Monte Carlo simulations of channeling spectra recorded for samples containing complex defects

Energy Technology Data Exchange (ETDEWEB)

Jagielski, Jacek [Institute for Electronic Materials Technology; Turos, Prof. Andrzej [Institute for Electronic Materials Technology; Nowicki, Lech [Soltan Institute for Nuclear Studies, Swierk, Poland; Jozwik, P. [Institute for Electronic Materials Technology; Shutthanandan, Vaithiyalingam [Pacific Northwest National Laboratory (PNNL); Zhang, Yanwen [ORNL; Sathish, N. [Institute for Electronic Materials Technology; Thome, Lionel [Universite Paris Sud, Orsay, France; Stonert, A. [Soltan Institute for Nuclear Studies, Swierk, Poland; Jozwik-Biala, Iwona [Institute for Electronic Materials Technology

2012-01-01

The aim of the present paper is to describe the current status of the development of McChasy, a Monte Carlo simulation code, to make it suitable for the analysis of dislocations and dislocation loops in crystals. Such factors like the shape of the bent channel and geometrical distortions of the crystalline structure in the vicinity of dislocation has been discussed. The results obtained demonstrate that the new procedure applied to the spectra recorded on crystals containing dislocation yields damage profiles which are independent of the energy of the analyzing beam.

Single and double acceptor-levels of a carbon-hydrogen defect in n-type silicon

Energy Technology Data Exchange (ETDEWEB)

Stübner, R.; Scheffler, L.; Kolkovsky, Vl., E-mail: kolkov@ifpan.edu.pl; Weber, J. [Technische Universität Dresden, 01062 Dresden (Germany)

2016-05-28

In the present study, we discuss the origin of two dominant deep levels (E42 and E262) observed in n-type Si, which is subjected to hydrogenation by wet chemical etching or a dc H-plasma treatment. Their activation enthalpies determined from Laplace deep level transient spectroscopy measurements are E{sub C}-0.06 eV (E42) and E{sub C}-0.51 eV (E262). The similar annealing behavior and identical depth profiles of E42 and E262 correlate them with two different charge states of the same defect. E262 is attributed to a single acceptor state due to the absence of the Poole-Frenkel effect and the lack of a capture barrier for electrons. The emission rate of E42 shows a characteristic enhancement with the electric field, which is consistent with the assignment to a double acceptor state. In samples with different carbon and hydrogen content, the depth profiles of E262 can be explained by a defect with one H-atom and one C-atom. From a comparison with earlier calculations [Andersen et al., Phys. Rev. B 66, 235205 (2002)], we attribute E42 to the double acceptor and E262 to the single acceptor state of the CH{sub 1AB} configuration, where one H atom is directly bound to carbon in the anti-bonding position.

Echo detected EPR as a tool for detecting radiation-induced defect signals in pottery

International Nuclear Information System (INIS)

Zoleo, Alfonso; Bortolussi, Claudia; Brustolon, Marina

2011-01-01

Archaeological fragments of pottery have been investigated by using CW-EPR and Echo Detected EPR (EDEPR). EDEPR allows to remove the CW-EPR dominant Fe(III) background spectrum, hiding much weaker signals potentially useful for dating purpose. EDEPR spectra attributed to a methyl radical and to feldspar defects have been recorded at room and low temperature for an Iron Age cooking ware (700 B.C.). A study on the dependence of EDEPR intensity over absorbed dose on a series of γ-irradiated brick samples (estimated age of 562 ± 140 B.C.) has confirmed the potential efficacy of the proposed method for spotting defect signals out of the strong iron background. - Highlights: → Fe(III) CW-EPR signals cover CW-EPR-detectable defects in ceramics. → Echo detected EPR gets rid of Fe(III) signals, disclosing defect signals. → Echo detected EPR detects defect signals even at relatively low doses.

Defect induced tuning of photoluminescence property in graphitic carbon nitride nanosheets through synthesis conditions

Energy Technology Data Exchange (ETDEWEB)

Das, D. [School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700032 (India); Banerjee, D., E-mail: nilju82@gmail.com [School of Materials Science Engineering Indian Institute of Engineering Science and Technology, Shibpur, Howrah (India); Pahari, D. [School of Materials Science Engineering Indian Institute of Engineering Science and Technology, Shibpur, Howrah (India); Ghorai, U.K. [Department of Industrial Chemistry & Swami Vivekananda Research centre, Ramakrishna Mission Vidyamandira, Belur Math, Howrah 711202 (India); Sarkar, S.; Das, N.S. [School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700032 (India); Chattopadhyay, K.K., E-mail: kalyan_chattopadhyay@yahoo.com [School of Materials Science and Nanotechnology, Jadavpur University, Kolkata 700032 (India); Thin Film and Nanoscience Laboratory, Department of Physics, Jadavpur University, Kolkata 700032 (India)

2017-05-15

Synthesis of layered sheet like graphitic carbon nitride by pyrolysis of urea at different temperatures has been reported. The proper phase formation has been confirmed by X-ray diffraction study whereas field emission scanning and transmission electron microscope characterized the morphology of the material. Fourier transform infrared and Raman spectroscopy revealed the presence of different bonds in the sample. Thermal gravimetric analysis has been used to study the thermal stability of the material. Energy dispersive X-ray analysis further revealed the elemental composition of carbon and nitrogen in a proper stoichiometric ratio. Excitation dependent photoluminescence spectra of the as prepared samples have been studied in detail. It has been shown that synthesis condition can tailor the amount of defects present in the synthesized samples that in turn can change the photoluminescence properties of the material. The fluorescence spectra of the as prepared samples have been used to detect copper ions present in the sample. It has also been shown that the presence of defects which is mainly N-H functional groups can change the decay characteristics of the carrier in these samples which in turn changes the PL spectra.

Proton energy spectra during ground level enhancements as measured by EPHIN aboard SOHO

Energy Technology Data Exchange (ETDEWEB)

Heber, Bernd; Kuehl, Patrick; Klassen, Andreas; Dresing, Nina [Christian-Albrechts-Universitaet zu Kiel, 24118 Kiel (Germany); Gomez-Herrero, Raul [Universidad de Alcala (Spain)

2016-07-01

Ground Level Enhancements (GLEs) are solar energetic particle (SEP) events that are recorded by ground-based instrumentation. The energy of the particles is so high that they produce secondary particles in the Earth's atmosphere, i.e. protons and neutrons, which are detected as sudden increases in cosmic ray intensities measured by e.g. neutron monitors. Since the launch of SOHO in December 1995 the neutron monitor network recorded 16 GLEs. The Electron Proton Helium INstrument on board SOHO has been designed to measure protons and helium up to 53 MeV/nucleon as well as electrons up to 8.3 MeV. Above these energies, particles penetrate all detector elements and thus, a separation between different particle species becomes more complicated. Recently we developed a method that allows deriving the energy spectrum for penetrating protons up to more than 1 GeV. In this contribution we present the proton energy spectra and time profiles of above mentioned GLEs and compare them to previous measurements. Although there are differences of up to a factor two the overall shape of the energy spectra agree surprisingly well. Thus it has been demonstrated that EPHIN measurements are a valuable tool for understanding GLE.

Thermal equilibrium defects in anthracene probed by positron annihilation

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro; Tachibana, Masaru; Shimizu, Mikio; Satoh, Masaaki; Kojima, Kenichi; Ishibashi, Shoji; Kawano, Takao.

1996-01-01

Defects in anthracene were investigated by the positron annihilation technique. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured in the temperature range between 305 K and 516 K. The lifetime of positrons annihilated from the delocalized state was determined to be 0.306 ns around room temperature. Below the melting point, the observed temperature dependence of the line shape parameter S was explained assuming the formation energy of thermal equilibrium defects was 1 eV. Above the melting point, the pick-off annihilation of ortho-positronium in open spaces was observed, where the size of these spaces was estimated to be 0.2 nm 3 . The annihilation of positrons from the self-trapped state was also discussed. (author)

Thermal equilibrium defects in anthracene probed by positron annihilation

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Tachibana, Masaru; Shimizu, Mikio; Satoh, Masaaki; Kojima, Kenichi; Ishibashi, Shoji; Kawano, Takao

1996-06-01

Defects in anthracene were investigated by the positron annihilation technique. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured in the temperature range between 305 K and 516 K. The lifetime of positrons annihilated from the delocalized state was determined to be 0.306 ns around room temperature. Below the melting point, the observed temperature dependence of the line shape parameter S was explained assuming the formation energy of thermal equilibrium defects was 1 eV. Above the melting point, the pick-off annihilation of ortho-positronium in open spaces was observed, where the size of these spaces was estimated to be 0.2 nm{sup 3}. The annihilation of positrons from the self-trapped state was also discussed. (author)

An automatic controlled apparatus of target chamber for atomic spectra and level lifetime measurements

International Nuclear Information System (INIS)

Zhao Mengchun; Yang Zhihu

1998-01-01

An automatically controlled apparatus of target chamber was made to measure spectra of the excited atoms and lifetime of the excited levels. The hardware is composed of nine parts including a computer and a step-motor, while the software consists of three branch programs. The maximum movable distance of target position is 65 cm with a step-length of 8.3 μm and a precision of +- 18 μm per 2 mm. On account of simple structure and double protection, the apparatus exhibits flexibility and reliability in years service

Modeling charged defects inside density functional theory band gaps

International Nuclear Information System (INIS)

Schultz, Peter A.; Edwards, Arthur H.

2014-01-01

Density functional theory (DFT) has emerged as an important tool to probe microscopic behavior in materials. The fundamental band gap defines the energy scale for charge transition energy levels of point defects in ionic and covalent materials. The eigenvalue gap between occupied and unoccupied states in conventional DFT, the Kohn–Sham gap, is often half or less of the experimental band gap, seemingly precluding quantitative studies of charged defects. Applying explicit and rigorous control of charge boundary conditions in supercells, we find that calculations of defect energy levels derived from total energy differences give accurate predictions of charge transition energy levels in Si and GaAs, unhampered by a band gap problem. The GaAs system provides a good theoretical laboratory for investigating band gap effects in defect level calculations: depending on the functional and pseudopotential, the Kohn–Sham gap can be as large as 1.1 eV or as small as 0.1 eV. We find that the effective defect band gap, the computed range in defect levels, is mostly insensitive to the Kohn–Sham gap, demonstrating it is often possible to use conventional DFT for quantitative studies of defect chemistry governing interesting materials behavior in semiconductors and oxides despite a band gap problem

Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Armstrong, Andrew M; Allerman, Andrew A; Baca, Albert G; Sanchez, Carlos A

2013-01-01

The influence of deep levels defects located in highly resistive GaN:C buffers on the on-resistance (R ON ) and threshold voltage (V th ) of AlGaN/GaN high electron mobility transistors (HEMTs) power devices was studied by a combined photocapacitance deep level optical spectroscopy (C-DLOS) and photoconductance deep level optical spectroscopy (G-DLOS) methodology as a function of electrical stress. Two carbon-related deep levels at 1.8 and 2.85 eV below the conduction band energy minimum were identified from C-DLOS measurements under the gate electrode. It was found that buffer-related defects under the gate shifted V th positively by approximately 10%, corresponding to a net areal density of occupied defects of 8 × 10 12 cm −2 . The effect of on-state drain stress and off-state gate stress on buffer deep level occupancy and R ON was also investigated via G-DLOS. It was found that the same carbon-related deep levels observed under the gate were also active in the access region. Off-state gate stress produced significantly more trapping and degradation of R ON (∼140%) compared to on-state drain stress (∼75%). Greater sensitivity of R ON to gate stress was explained by a more sharply peaked lateral distribution of occupied deep levels between the gate and drain compared to drain stress. The overall greater sensitivity of R ON compared to V th to buffer defects suggests that electron trapping is significantly greater in the access region compared to under the gate, likely due to the larger electric fields in the latter region. (invited paper)

Extended defect related energy loss in CVD diamond revealed by spectrum imaging in a dedicated STEM

International Nuclear Information System (INIS)

Bangert, U.; Harvey, A.J.; Schreck, M.; Hoermann, F.

2005-01-01

This article aims at investigations of the low EEL region in the wide band gap system diamond. The advent of the UHV Enfina electron energy loss spectrometer combined with Digital Micrograph acquisition and processing software has made reliable detection of absorption losses below 10 eV possible. Incorporated into a dedicated STEM this instrumentation allows the acquisition of spectral information via spectrum maps (spectrum imaging) of sample areas hundreds of nanometers across, with nanometers pixel sizes, adequate spectrum statistics and 0.3 eV energy resolution, in direct correlation with microstructural features in the mapping area. We aim at discerning defect related losses at band gap energies, and discuss different routes to simultaneously process and analyse the spectra in a map. This involves extracting the zero loss peak from each spectrum and constructing ratio maps from the intensities in two energy windows, one defect related and one at a higher, crystal bandstructure dominated energy. This was applied to the residual spectrum maps and their first derivatives. Secondly, guided by theoretical EEL spectra calculations, the low loss spectra were fitted by a series of gaussian distributions. Pixel maps were constructed from amplitude ratios of gaussians, situated in the defect and the unaffected energy regime. The results demonstrate the existence of sp 2 -bonded carbon in the vicinity of stacking faults and partial dislocations in CVD diamond as well as additional states below conduction band, tailing deep into the band gap, at a node in a perfect dislocation. Calculated EEL spectra of shuffle dislocations give similar absorption features at 5-8 eV, and it is thought that this common feature is due to sp 2 -type bonding

Defects in alpha and gamma crystalline nylon6: A computational study

Directory of Open Access Journals (Sweden)

Saeid Arabnejad

2015-10-01

Full Text Available We present a comparative Density Functional Tight Binding study of structures, energetics, and vibrational properties of α and γ crystalline phases of nylon6 with different types of defects: single and double chain vacancies and interstitials. The defect formation energies are: for a single vacancy 0.66 and 0.64 kcal/mol per monomer, and for an interstitial strand 1.35 and 2.45 kcal/mol per monomer in the α and γ phases, respectively. The presence of defects does not materially influence the relative stability of the two phases, within the accuracy of the method. The inclusion of phononic contributions has a negligible effect. The calculations show that even if it were possible to synthesize the pure phases of nylon6, the defects will be easily induced at room temperature, because vacancy formation energies in both phases are of the order of kT at room temperature. The formation of interstitial defects, on the contrary, requires the energy equivalent to multiple kT values and is much less likely; it is also much less probable in the γ phase than in α. The vibration spectra do not show significant sensitivity to the presence of these defects.

Study of residue type defect formation mechanism and the effect of advanced defect reduction (ADR) rinse process

Science.gov (United States)

Arima, Hiroshi; Yoshida, Yuichi; Yoshihara, Kosuke; Shibata, Tsuyoshi; Kushida, Yuki; Nakagawa, Hiroki; Nishimura, Yukio; Yamaguchi, Yoshikazu

2009-03-01

Residue type defect is one of yield detractors in lithography process. It is known that occurrence of the residue type defect is dependent on resist development process and the defect is reduced by optimized rinsing condition. However, the defect formation is affected by resist materials and substrate conditions. Therefore, it is necessary to optimize the development process condition by each mask level. Those optimization steps require a large amount of time and effort. The formation mechanism is investigated from viewpoint of both material and process. The defect formation is affected by resist material types, substrate condition and development process condition (D.I.W. rinse step). Optimized resist formulation and new rinse technology significantly reduce the residue type defect.

Study on electrical defects level in single layer two-dimensional Ta2O5

Science.gov (United States)

Dahai, Li; Xiongfei, Song; Linfeng, Hu; Ziyi, Wang; Rongjun, Zhang; Liangyao, Chen; David, Wei Zhang; Peng, Zhou

2016-04-01

Two-dimensional atomic-layered material is a recent research focus, and single layer Ta2O5 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta2O5 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta2O5. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta2O5, exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta2O5. Project supported by the National Natural Science Foundation of China (Grant Nos. 11174058 and 61376093), the Fund from Shanghai Municipal Science and Technology Commission (Grant No. 13QA1400400), the National Science and Technology Major Project, China (Grant No. 2011ZX02707), and the Innovation Program of Shanghai Municipal Education Commission (Grant No. 12ZZ010).

Vacancy-type defects in In{sub x}Ga{sub 1−x}N grown on GaN templates probed using monoenergetic positron beams

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira [Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Watanabe, Tomohito; Kimura, Shogo; Zhang, Yang; Lozac' h, Mickael [Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Sang, Liwen; Sumiya, Masatomo [Wide Bandgap Material Group, National Institute for Materials Science, Tsukuba 305-0044 (Japan); Ishibashi, Shoji [Nanosystem Research Institute (NRI) “RICS,” National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Oshima, Nagayasu; Suzuki, Ryoichi [Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

2013-11-14

Native defects in In{sub x}Ga{sub 1−x}N layers grown by metalorganic chemical vapor deposition were studied using monoenergetic positron beams. Measurements of Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons for a 200-nm-thick In{sub 0.13}Ga{sub 0.87}N layer showed that vacancy-type defects were introduced by InN alloying, and the major species of such defects was identified as complexes between a cation vacancy and nitrogen vacancies. The presence of the defects correlated with lattice relaxation of the In{sub 0.13}Ga{sub 0.87}N layer and the increase in photon emissions from donor-acceptor-pair recombination. The species of native defects in In{sub 0.06}Ga{sub 0.94}N layers was the same but its concentration was decreased by decreasing the InN composition. With the layer thickness increased from 120 nm to 360 nm, a defect-rich region was introduced in the subsurface region (<160 nm), which can be associated with layer growth with the relaxation of compressive stress.

Defects at oxide surfaces

CERN Document Server

Thornton, Geoff

2015-01-01

This book presents the basics and characterization of defects at oxide surfaces. It provides a state-of-the-art review of the field, containing information to the various types of surface defects, describes analytical methods to study defects, their chemical activity and the catalytic reactivity of oxides. Numerical simulations of defective structures complete the picture developed. Defects on planar surfaces form the focus of much of the book, although the investigation of powder samples also form an important part. The experimental study of planar surfaces opens the possibility of applying the large armoury of techniques that have been developed over the last half-century to study surfaces in ultra-high vacuum. This enables the acquisition of atomic level data under well-controlled conditions, providing a stringent test of theoretical methods. The latter can then be more reliably applied to systems such as nanoparticles for which accurate methods of characterization of structure and electronic properties ha...

Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors

Science.gov (United States)

Wang, Chong; Simoen, Eddy; Zhao, Ming; Li, Wei

2017-10-01

Deep levels formed under different growth conditions of a 200 nm AlN buffer layer on B-doped Czochralski Si(111) substrates with different resistivity were investigated by deep-level transient spectroscopy (DLTS) on metal-insulator-semiconductor capacitors. Growth-temperature-dependent Al diffusion in the Si substrate was derived from the free carrier density obtained by capacitance-voltage measurement on samples grown on p- substrates. The DLTS spectra revealed a high concentration of point and extended defects in the p- and p+ silicon substrates, respectively. This indicated a difference in the electrically active defects in the silicon substrate close to the AlN/Si interface, depending on the B doping concentration.

Deep defect levels in standard and oxygen enriched silicon detectors before and after **6**0Co-gamma-irradiation

CERN Document Server

Stahl, J; Lindström, G; Pintilie, I

2003-01-01

Capacitance Deep Level Transient Spectroscopy (C-DLTS) measurements have been performed on standard and oxygen-doped silicon detectors manufactured from high-resistivity n-type float zone material with left angle bracket 111 right angle bracket and left angle bracket 100 right angle bracket orientation. Three different oxygen concentrations were achieved by the so-called diffusion oxygenated float zone (DOFZ) process initiated by the CERN-RD48 (ROSE) collaboration. Before the irradiation a material characterization has been performed. In contrast to radiation damage by neutrons or high- energy charged hadrons, were the bulk damage is dominated by a mixture of clusters and point defects, the bulk damage caused by **6**0Co-gamma-radiation is only due to the introduction of point defects. The dominant electrically active defects which have been detected after **6**0Co-gamma-irradiation by C-DLTS are the electron traps VO//i, C//iC//s, V//2( = /-), V //2(-/0) and the hole trap C//i O//i. The main difference betwe...

A qualitative study of spin polarization effect in defect tuned Co/graphene/Co nanostructures

Energy Technology Data Exchange (ETDEWEB)

Mandal, Sumit, E-mail: smtdone@gmail.com, E-mail: cnssks@iacs.res.in; Saha, Shyamal K., E-mail: smtdone@gmail.com, E-mail: cnssks@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

2014-10-15

Theoretical reports predict that in contact with a ferromagnetic giant spin, spin polarization evolves in defective graphene since defects in graphene act as local spin moments. We have synthesized different Co/graphene/Co nano spin valve like structures tuning the degree of defect applying ultrasonic vibration and characterized them by Raman spectroscopy. Initially with increasing I{sub D}/I{sub G} ratio in Raman spectra, antiferromagnetic coupling between the Co nanosheets on either sides of graphene enhances leading to betterment in spin transport through graphene. But for highest I{sub D}/I{sub G}, a totally new phenomenon called antiferro quadrupolar ordering (AFQ) takes place which eventually reduces the spin polarization effect.

Observation of new defect levels in nanodiamond membranes

Czech Academy of Sciences Publication Activity Database

Kravets, Roman; Johnston, K.; Potměšil, Jiří; Vorlíček, Vladimír; Rosa, Jan; Vaněček, Milan

2005-01-01

Roč. 202, č. 11 (2005), s. 2166-2170 ISSN 0031-8965 R&D Projects: GA ČR(CZ) GA202/05/2233; GA MŠk(CZ) LC510 Grant - others:Marie Curie Research Training Network, European Union, project DRIVE(XE) MRTN-CT-2004-512224 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond * defects spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.041, year: 2005

Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions

KAUST Repository

Awan, Saif Ullah; Hasanain, S. K.; Hassnain Jaffari, G.; Anjum, Dalaver H.; Qurashi, Umar S.

2014-01-01

Microstructural and optical properties of Zn1-yLiyO (0.00 ≤y ≤0.10) nanoparticles are investigated. Li incorporation leads to substantial changes in the structural characterization. From micro-structural analysis, no secondary phases or clustering of Li was detected. Elemental maps confirmed homogeneous distribution of Li in ZnO. Sharp UV peak due to the recombination of free exciton and defects based luminescence broad visible band was observed. The transition from the conduction band to Zinc vacancy defect level in photoluminescence spectra is found at 518±2.5nm. The yellow luminescence was observed and attributed to Li related defects in doped samples. With increasing Li doping, a decrease in energy bandgap was observed in the range 3.26±0.014 to 3.17±0.018eV. The bandgap narrowing behavior is explained in terms of the band tailing effect due to structural disorder, carrier-impurities, carrier-carrier, and carrier-phonon interactions. Tuning of the bandgap energy in this class of wide bandgap semiconductor is very important for room temperature spintronics applications and optical devices. © 2014 AIP Publishing LLC.

Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions

KAUST Repository

Awan, Saif Ullah

2014-08-28

Microstructural and optical properties of Zn1-yLiyO (0.00 ≤y ≤0.10) nanoparticles are investigated. Li incorporation leads to substantial changes in the structural characterization. From micro-structural analysis, no secondary phases or clustering of Li was detected. Elemental maps confirmed homogeneous distribution of Li in ZnO. Sharp UV peak due to the recombination of free exciton and defects based luminescence broad visible band was observed. The transition from the conduction band to Zinc vacancy defect level in photoluminescence spectra is found at 518±2.5nm. The yellow luminescence was observed and attributed to Li related defects in doped samples. With increasing Li doping, a decrease in energy bandgap was observed in the range 3.26±0.014 to 3.17±0.018eV. The bandgap narrowing behavior is explained in terms of the band tailing effect due to structural disorder, carrier-impurities, carrier-carrier, and carrier-phonon interactions. Tuning of the bandgap energy in this class of wide bandgap semiconductor is very important for room temperature spintronics applications and optical devices. © 2014 AIP Publishing LLC.

Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

KAUST Repository

Flemban, Tahani H.; Sequeira, M. C.; Zhang, Z.; Venkatesh, S.; Alves, E.; Lorenz, K.; Roqan, Iman S.

2016-01-01

Gd-doped ZnO thin films were prepared using pulsed laser deposition at different oxygen pressures and varied Gd concentrations. The effects of oxygen deficiency-related defects on the Gd incorporation, optical and structural properties, were explored by studying the impact of oxygen pressure during deposition and post-growth thermal annealing in vacuum. Rutherford Backscattering Spectrometry revealed that the Gd concentration increases with increasing oxygen pressure for samples grown with the same Gd-doped ZnO target. Unexpectedly, the c-lattice parameter of the samples tends to decrease with increasing Gd concentration, suggesting that Gd-defect complexes play an important role in the structural properties. Using low-temperature photoluminescence(PL), Raman measurements and density functional theory calculations, we identified oxygen vacancies as the dominant intrinsic point defects. PL spectra show a defect band related to oxygen vacancies for samples grown at oxygen deficiency.

Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

KAUST Repository

Flemban, Tahani H.

2016-02-08

Gd-doped ZnO thin films were prepared using pulsed laser deposition at different oxygen pressures and varied Gd concentrations. The effects of oxygen deficiency-related defects on the Gd incorporation, optical and structural properties, were explored by studying the impact of oxygen pressure during deposition and post-growth thermal annealing in vacuum. Rutherford Backscattering Spectrometry revealed that the Gd concentration increases with increasing oxygen pressure for samples grown with the same Gd-doped ZnO target. Unexpectedly, the c-lattice parameter of the samples tends to decrease with increasing Gd concentration, suggesting that Gd-defect complexes play an important role in the structural properties. Using low-temperature photoluminescence(PL), Raman measurements and density functional theory calculations, we identified oxygen vacancies as the dominant intrinsic point defects. PL spectra show a defect band related to oxygen vacancies for samples grown at oxygen deficiency.

Understanding and Calibrating Density-Functional-Theory Calculations Describing the Energy and Spectroscopy of Defect Sites in Hexagonal Boron Nitride.

Science.gov (United States)

Reimers, Jeffrey R; Sajid, A; Kobayashi, Rika; Ford, Michael J

2018-03-13

Defect states in 2-D materials present many possible uses but both experimental and computational characterization of their spectroscopic properties is difficult. We provide and compare results from 13 DFT and ab initio computational methods for up to 25 excited states of a paradigm system, the V N C B defect in hexagonal boron nitride (h-BN). Studied include: (i) potentially catastrophic effects for computational methods arising from the multireference nature of the closed-shell and open-shell states of the defect, which intrinsically involves broken chemical bonds, (ii) differing results from DFT and time-dependent DFT (TDDFT) calculations, (iii) comparison of cluster models to periodic-slab models of the defect, (iv) the starkly differing effects of nuclear relaxation on the various electronic states that control the widths of photoabsorption and photoemission spectra as broken bonds try to heal, (v) the effect of zero-point energy and entropy on free-energy differences, (vi) defect-localized and conduction/valence-band transition natures, and (vii) strategies needed to ensure that the lowest-energy state of a defect can be computationally identified. Averaged state-energy differences of 0.3 eV are found between CCSD(T) and MRCI energies, with thermal effects on free energies sometimes also being of this order. However, DFT-based methods can perform very poorly. Simple generalized-gradient functionals like PBE fail at the most basic level and should never be applied to defect states. Hybrid functionals like HSE06 work very well for excitations within the triplet manifold of the defect, with an accuracy equivalent to or perhaps exceeding the accuracy of the ab initio methods used. However, HSE06 underestimates triplet-state energies by on average of 0.7 eV compared to closed-shell singlet states, while open-shell singlet states are predicted to be too low in energy by 1.0 eV. This leads to misassignment of the ground state of the V N C B defect. Long

Solar Energetic Particle Spectra

Science.gov (United States)

Ryan, J. M.; Boezio, M.; Bravar, U.; Bruno, A.; Christian, E. R.; de Nolfo, G. A.; Martucci, M.; Mergè, M.; Munini, R.; Ricci, M.; Sparvoli, R.; Stochaj, S.

2017-12-01

We report updated event-integrated spectra from several SEP events measured with PAMELA. The measurements were made from 2006 to 2014 in the energy range starting at 80 MeV and extending well above the neutron monitor threshold. The PAMELA instrument is in a high inclination, low Earth orbit and has access to SEPs when at high latitudes. Spectra have been assembled from these high-latitude measurements. The field of view of PAMELA is small and during the high-latitude passes it scans a wide range of asymptotic directions as the spacecraft orbits. Correcting for data gaps, solid angle effects and improved background corrections, we have compiled event-integrated intensity spectra for twenty-eight SEP events. Where statistics permit, the spectra exhibit power law shapes in energy with a high-energy exponential roll over. The events analyzed include two genuine ground level enhancements (GLE). In those cases the roll-over energy lies above the neutron monitor threshold ( 1 GV) while the others are lower. We see no qualitative difference between the spectra of GLE vs. non-GLE events, i.e., all roll over in an exponential fashion with rapidly decreasing intensity at high energies.

Defects in Cu(In,Ga)Se{sub 2} chalcopyrite semiconductors: a comparative study of material properties, defect states, and photovoltaic performance

Energy Technology Data Exchange (ETDEWEB)

Cao, Qing; Gunawan, Oki; Copel, Matthew; Reuter, Kathleen B; Chey, S Jay; Mitzi, David B [IBM T.J. Watson Research Center, Yorktown Heights, NY (United States); Deline, Vaughn R [IBM Almaden Resesarch Center, San Jose, CA (United States)

2011-10-15

Understanding defects in Cu(In,Ga)(Se,S){sub 2} (CIGS), especially correlating changes in the film formation process with differences in material properties, photovoltaic (PV) device performance, and defect levels extracted from admittance spectroscopy, is a critical but challenging undertaking due to the complex nature of this polycrystalline compound semiconductor. Here we present a systematic comparative study wherein varying defect density levels in CIGS films were intentionally induced by growing CIGS grains using different selenium activity levels. Material characterization results by techniques including X-ray diffraction, scanning electron microscopy, transmission electron microscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy, and medium energy ion scattering indicate that this process variation, although not significantly affecting CIGS grain structure, crystal orientation, or bulk composition, leads to enhanced formation of a defective chalcopyrite layer with high density of indium or gallium at copper antisite defects ((In, Ga){sub Cu}) near the CIGS surface, for CIGS films grown with insufficient selenium supply. This defective layer or the film growth conditions associated with it is further linked with observed current-voltage characteristics, including rollover and crossover behavior, and a defect state at around 110 meV (generally denoted as the N1 defect) commonly observed in admittance spectroscopy. The impact of the (In, Ga){sub Cu} defects on device PV performance is also established. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

On the position of local levels of defects in proton-irradiated Pb1-xSnxTe alloys

International Nuclear Information System (INIS)

Brandt, N.B.; Gas'kov, A.M.; Ladygin, E.A.; Skipetrov, E.P.; Khorosh, A.G.

1989-01-01

Effect of fast proton irradiation (T≅300 K, E=200 keV, F≤2x10 14 cm -2 ) on electrophysical properties of thin layers p-Pb 1-x Sn x Te (0.17 ≤x≤ 0.26) is investigated. Saturation of radiation flux dependences of hole density due to occurrence of a resonance level under irradiation, which is near the ceiling of the valence band of alloys, and due to stabilization of the Fermi level with the resonance level is detected. Possibility of coordination of novadays data on the position of the levels of radiation defects in alloys Pb 1-x Sn x Te is discussed

High Defect Tolerance in Lead Halide Perovskite CsPbBr3.

Science.gov (United States)

Kang, Jun; Wang, Lin-Wang

2017-01-19

The formation energies and charge-transition levels of intrinsic point defects in lead halide perovskite CsPbBr 3 are studied from first-principles calculations. It is shown that the formation energy of dominant defect under Br-rich growth condition is much lower than that under moderate or Br-poor conditions. Thus avoiding the Br-rich condition can help to reduce the defect concentration. Interestingly, CsPbBr 3 is found to be highly defect-tolerant in terms of its electronic structure. Most of the intrinsic defects induce shallow transition levels. Only a few defects with high formation energies can create deep transition levels. Therefore, CsPbBr 3 can maintain its good electronic quality despite the presence of defects. Such defect tolerance feature can be attributed to the lacking of bonding-antibonding interaction between the conduction bands and valence bands.

The defects produced by electron irradiation in tellurium-doped germanium

International Nuclear Information System (INIS)

Fukuoka, Noboru; Saito, Haruo

1989-01-01

The nature of the irradiation induced defects in a germanium single crystal doped with tellurium was studied by DLTS and electrical measurements. The E c -0.21 eV level produced by irradiation with 1.5 MeV electrons was studied using the DLTS technique. It was found that the defect associated with this level is a divacancy. The E-center like defect (group V impurity-vacancy pair) introduces the E c -0.20 eV level in samples doped with a group V impurity. The level introduced by a tellurium (group VI impurity)-vacancy pair is deeper. The E c -0.16 eV level was generated by annealing at 430 K. A tellurium-vacancies complex is proposed as the defect associated with this level. (author)

Experimental evidence for an associated defect model for the neutron generated As/sub Ga/ center in gallium arsenide

International Nuclear Information System (INIS)

Golzene, A.; Meyer, B.; Schwab, C.

1984-01-01

The thermal dependence of EPR spectra of fast neutron irradiated n-type GaAs over the whole 4.2 to 300 K temperature range has been studied using the decomposition of spectra into a quadruplet of four identical Gaussian lines and a Lorentzian singlet. Quadruplet and singlet spectra as well as their proper parameters (inverse of paramagnetic susceptibility, hyperfine constants) could be determined separately. Experiments give evidence that the neutron generated anionic antisites As/sub Ga/ in GaAs are constituting associated defect centers, most likely of intrinsic nature

Core-level spectra and binding energies of transition metal nitrides by non-destructive x-ray photoelectron spectroscopy through capping layers

Energy Technology Data Exchange (ETDEWEB)

Greczynski, G., E-mail: grzgr@ifm.liu.se [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping (Sweden); Primetzhofer, D. [Department of Physics and Astronomy, The Ångström Laboratory, Uppsala University, P.O. Box 516, SE-751 20 Uppsala (Sweden); Lu, J.; Hultman, L. [Thin Film Physics Division, Department of Physics (IFM), Linköping University, SE-581 83 Linköping (Sweden)

2017-02-28

Highlights: • First non-destructive measurements of XPS core level binding energies for group IVb-VIb transition metal nitrides are presented. • All films are grown under the same conditions and analyzed in the same instrument, providing a useful reference for future XPS studies. • Extracted core level BE values are more reliable than those obtained from sputter-cleaned N-deficient surfaces. • Comparison to Ar+-etched surfaces reveals that even mild etching conditions result in the formation of a nitrogen-deficient surface layer. • The N/metal concentration ratios from capped samples are found to be 25-90% higher than those from the corresponding ion-etched surfaces. - Abstract: We present the first measurements of x-ray photoelectron spectroscopy (XPS) core level binding energies (BE:s) for the widely-applicable group IVb-VIb polycrystalline transition metal nitrides (TMN’s) TiN, VN, CrN, ZrN, NbN, MoN, HfN, TaN, and WN as well as AlN and SiN, which are common components in the TMN-based alloy systems. Nitride thin film samples were grown at 400 °C by reactive dc magnetron sputtering from elemental targets in Ar/N{sub 2} atmosphere. For XPS measurements, layers are either (i) Ar{sup +} ion-etched to remove surface oxides resulting from the air exposure during sample transfer from the growth chamber into the XPS system, or (ii) in situ capped with a few nm thick Cr or W overlayers in the deposition system prior to air-exposure and loading into the XPS instrument. Film elemental composition and phase content is thoroughly characterized with time-of-flight elastic recoil detection analysis (ToF-E ERDA), Rutherford backscattering spectrometry (RBS), and x-ray diffraction. High energy resolution core level XPS spectra acquired with monochromatic Al Kα radiation on the ISO-calibrated instrument reveal that even mild etching conditions result in the formation of a nitrogen-deficient surface layer that substantially affects the extracted binding energy

Core-level spectra and binding energies of transition metal nitrides by non-destructive x-ray photoelectron spectroscopy through capping layers

International Nuclear Information System (INIS)

Greczynski, G.; Primetzhofer, D.; Lu, J.; Hultman, L.

2017-01-01

Highlights: • First non-destructive measurements of XPS core level binding energies for group IVb-VIb transition metal nitrides are presented. • All films are grown under the same conditions and analyzed in the same instrument, providing a useful reference for future XPS studies. • Extracted core level BE values are more reliable than those obtained from sputter-cleaned N-deficient surfaces. • Comparison to Ar+-etched surfaces reveals that even mild etching conditions result in the formation of a nitrogen-deficient surface layer. • The N/metal concentration ratios from capped samples are found to be 25-90% higher than those from the corresponding ion-etched surfaces. - Abstract: We present the first measurements of x-ray photoelectron spectroscopy (XPS) core level binding energies (BE:s) for the widely-applicable group IVb-VIb polycrystalline transition metal nitrides (TMN’s) TiN, VN, CrN, ZrN, NbN, MoN, HfN, TaN, and WN as well as AlN and SiN, which are common components in the TMN-based alloy systems. Nitride thin film samples were grown at 400 °C by reactive dc magnetron sputtering from elemental targets in Ar/N 2 atmosphere. For XPS measurements, layers are either (i) Ar + ion-etched to remove surface oxides resulting from the air exposure during sample transfer from the growth chamber into the XPS system, or (ii) in situ capped with a few nm thick Cr or W overlayers in the deposition system prior to air-exposure and loading into the XPS instrument. Film elemental composition and phase content is thoroughly characterized with time-of-flight elastic recoil detection analysis (ToF-E ERDA), Rutherford backscattering spectrometry (RBS), and x-ray diffraction. High energy resolution core level XPS spectra acquired with monochromatic Al Kα radiation on the ISO-calibrated instrument reveal that even mild etching conditions result in the formation of a nitrogen-deficient surface layer that substantially affects the extracted binding energy values. These

Neutron cross sections for defect production by high-energy displacement cascades in copper

International Nuclear Information System (INIS)

Heinisch, H.L.; Mann, F.M.

1983-08-01

Defect production cross sections for copper have been devised, based on computer simulations of displacement cascades. One thousand cascades ranging in energy from 200 eV to 200 keV were generated with the MARLOWE computer code. The cascades were subjected to a semi-empirical cascade quenching procedure and to short-term annealing with the ALSOME computer code. Functions were fitted to the numbers of defects produced as a function of primary knock-on atom (PKA) damage energy for the following defect types: 1) the total number of point defects after quenching and after short-term annealing, 2) the numbers of free interstitials and free vacancies after shortterm annealing, and 3) the numbers and sizes of vacancy and interstitial clusters after shortterm annealing. In addition, a function describing the number of distinct damage regions (lobes) per cascade was fitted to results of a graphical analysis of the cascade configurations. The defect production functions have been folded into PKA spectra using the NJOY nuclear data processing code system with ENDF/B-V nuclear data to yield neutron cross sections for defect production in copper. The free vacancy cross section displays much less variation with neutron energy than the cross sections for damage energy or total point defects

Neutron cross sections for defect production by high energy displacement cascades in copper

International Nuclear Information System (INIS)

Heinisch, H.L.; Mann, F.M.

1984-01-01

Defect production cross sections for copper have been devised, based on computer simulations of displacement cascades. One thousand cascades ranging in energy from 200 eV to 200 keV were generated with the MARLOWE computer code. The cascades were subjected to a semi-empirical cascade quenching procedure and to short-term annealing with the ALSOME computer code. Functions were fitted to the numbers of defects produced as a function of primary knock-on atom (PKA) damage energy for the following defect types: 1) the total number of point defects after quenching and after short-term annealing, 2) the numbers of free interstitials and free vacancies after short-term annealing, and 3) the numbers and sizes of vacancy and interstitial clusters after short-term annealing. In addition, a function describing the number of distinct damage regions (lobes) per cascade was fitted to results of a graphical analysis of the cascade configurations. The defect production functions have been folded into PKA spectra using the NJOY nuclear data processing code system with ENDF/B-V nuclear data to yield neutron cross sections for defect production in copper. The free vacancy cross section displays much less variation with neutron energy than the cross sections for damage energy or total point defects. (orig.)

Magnetic resonance of native defects of spin-Peierls magnetics CuGeO3

International Nuclear Information System (INIS)

Smirnov, A.I.; Glazkov, V.N.; Leonyuk, L.I.; Vetkin, A.G.; Eremina, R.M.

1998-01-01

Magnetic resonance within 9-75 GHz frequency range and 1.2-25 K temperature range was studied in pure monocrystalline spin-Peierls CuGwO 3 . Splitting of the magnetic resonance line is observed within temperature range below 5 K. Analysis of magnetic resonance spectra at various directions of magnetic field and under various temperatures enables to set off EPR-signals of spin-Peierls phase defects with S=1/2 and defects with S=1 from these components; g-factor corresponding to these EPR signals is similar one and close to values typical for Cu 2+ ion [ru

Laser radiation effect on radiation-induced defects in heavy ion tracks in dielectrics

International Nuclear Information System (INIS)

Egorov, A.N.; Zhiryakov, B.M.; Kushin, V.V.; Lyapidevskij, V.K.; Khokhlov, N.B.

1988-01-01

Possibility of laser radiation resonance effect on radiation-induced defects in heavy ion tracks in dielectric materials is investigated. Absorption spectra in infrared, visible and ultraviolet ranges for cellulose nitrate samples irradiated by 6 MeV/nucleon 58 Ni ions and reactor gamma radiation are measured. Absorption spectra for irradiated and reference samples are presented. Two absorption bands λ 1 =0.33 μm (E 1 =3.9 eV) and λ 2 =0.72 μm (E 2 =1.7 eV) are detected. Etching rate decrease in a track under laser radiation effect is noticed. 3 refs.; 1 fig

Ion channeling study of defects in compound crystals using Monte Carlo simulations

Science.gov (United States)

Turos, A.; Jozwik, P.; Nowicki, L.; Sathish, N.

2014-08-01

Ion channeling is a well-established technique for determination of structural properties of crystalline materials. Defect depth profiles have been usually determined basing on the two-beam model developed by Bøgh (1968) [1]. As long as the main research interest was focused on single element crystals it was considered as sufficiently accurate. New challenge emerged with growing technological importance of compound single crystals and epitaxial heterostructures. Overlap of partial spectra due to different sublattices and formation of complicated defect structures makes the two beam method hardly applicable. The solution is provided by Monte Carlo computer simulations. Our paper reviews principal aspects of this approach and the recent developments in the McChasy simulation code. The latter made it possible to distinguish between randomly displaced atoms (RDA) and extended defects (dislocations, loops, etc.). Hence, complex defect structures can be characterized by the relative content of these two components. The next refinement of the code consists of detailed parameterization of dislocations and dislocation loops. Defect profiles for variety of compound crystals (GaN, ZnO, SrTiO3) have been measured and evaluated using the McChasy code. Damage accumulation curves for RDA and extended defects revealed non monotonous defect buildup with some characteristic steps. Transition to each stage is governed by the different driving force. As shown by the complementary high resolution XRD measurements lattice strain plays here the crucial role and can be correlated with the concentration of extended defects.

Defects and defect processes in nonmetallic solids

CERN Document Server

Hayes, W

2004-01-01

This extensive survey covers defects in nonmetals, emphasizing point defects and point-defect processes. It encompasses electronic, vibrational, and optical properties of defective solids, plus dislocations and grain boundaries. 1985 edition.

Enhanced defects recombination in ion irradiated SiC

International Nuclear Information System (INIS)

Izzo, G.; Litrico, G.; Grassia, F.; Calcagno, L.; Foti, G.

2010-01-01

Point defects induced in SiC by ion irradiation show a recombination at temperatures as low as 320 K and this process is enhanced after running current density ranging from 80 to 120 A/cm 2 . Ion irradiation induces in SiC the formation of different defect levels and low-temperature annealing changes their concentration. Some levels (S 0 , S x and S 2 ) show a recombination and simultaneously a new level (S 1 ) is formed. An enhanced recombination of defects is besides observed after running current in the diode at room temperature. The carriers introduction reduces the S 2 trap concentration, while the remaining levels are not modified. The recombination is negligible up to a current density of 50 A/cm 2 and increases at higher current density. The enhanced recombination of the S 2 trap occurs at 300 K, which otherwise requires a 400 K annealing temperature. The process can be related to the electron-hole recombination at the associated defect.

Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level.

Science.gov (United States)

Vines, L; Bhoodoo, C; von Wenckstern, H; Grundmann, M

2017-12-13

The evolution of sheet resistance of n-type In 2 O 3 and Ga 2 O 3 exposed to bombardment with MeV 12 C and 28 Si ions at 35 K is studied in situ. While the sheet resistance of Ga 2 O 3 increased by more than eight orders of magnitude as a result of ion irradiation, In 2 O 3 showed a more complex defect evolution and became more conductive when irradiated at the highest doses. Heating up to room temperature reduced the sheet resistivity somewhat, but Ga 2 O 3 remained highly resistive, while In 2 O 3 showed a lower resistance than as deposited samples. Thermal admittance spectroscopy and deep level transient spectroscopy did not reveal new defect levels for irradiation up to [Formula: see text] cm -2 . A model where larger defect complexes preferentially produce donor like defects in In 2 O 3 is proposed, and may reveal a microscopic view of a charge neutrality level within the conduction band, as previously proposed.

Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level

Science.gov (United States)

Vines, L.; Bhoodoo, C.; von Wenckstern, H.; Grundmann, M.

2018-01-01

The evolution of sheet resistance of n-type In2O3 and Ga2O3 exposed to bombardment with MeV 12C and 28Si ions at 35 K is studied in situ. While the sheet resistance of Ga2O3 increased by more than eight orders of magnitude as a result of ion irradiation, In2O3 showed a more complex defect evolution and became more conductive when irradiated at the highest doses. Heating up to room temperature reduced the sheet resistivity somewhat, but Ga2O3 remained highly resistive, while In2O3 showed a lower resistance than as deposited samples. Thermal admittance spectroscopy and deep level transient spectroscopy did not reveal new defect levels for irradiation up to 2 × 1012 cm-2. A model where larger defect complexes preferentially produce donor like defects in In2O3 is proposed, and may reveal a microscopic view of a charge neutrality level within the conduction band, as previously proposed.

Infrared studies of the evolution of the C{sub i}O{sub i}(Si{sub I}) defect in irradiated Si upon isothermal anneals

Energy Technology Data Exchange (ETDEWEB)

Angeletos, T.; Londos, C. A., E-mail: hlontos@phys.uoa.gr [University of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84 (Greece); Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Faculty of Engineering, Environment and Computing, Coventry University, Priory Street, Coventry CV1 5FB (United Kingdom); Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom)

2016-03-28

Carbon-oxygen-self-interstitial complexes were investigated in silicon by means of Fourier transform infrared spectroscopy. Upon irradiation, the C{sub i}O{sub i} defect (C{sub 3}) forms which for high doses attract self-interstitials (Si{sub I}s) leading to the formation of the C{sub i}O{sub i}(Si{sub I}) defect (C{sub 4}) with two well-known related bands at 939.6 and 1024 cm{sup −1}. The bands are detectable in the spectra both in room temperature (RT) and liquid helium (LH) temperature. Upon annealing at 150 °C, these bands were transformed to three bands at 725, 952, and 973 cm{sup −1}, detectable only at LH temperatures. Upon annealing at 220 °C, these bands were transformed to three bands at 951, 969.5, and 977 cm{sup −1}, detectable both at RT and LH temperatures. Annealing at 280 °C resulted in the transformation of these bands to two new bands at 973 and 1024 cm{sup −1}. The latter bands disappear from the spectra upon annealing at 315 °C without the emergence of other bands in the spectra. Considering reaction kinetics and defect metastability, we developed a model to describe the experimental results. Annealing at 150 °C triggers the capturing of Si{sub I}s by the C{sub 4} defect leading to the formation of the C{sub i}O{sub i}(Si{sub I}){sub 2} complex. The latter structure appears to be bistable: measuring at LH, the defect is in configuration C{sub i}O{sub i}(Si{sub I}){sub 2} giving rise to the bands at 725, 952, and 973 cm{sup −1}, whereas on measurements at RT, the defect converts to another configuration C{sub i}O{sub i}(Si{sub I}){sub 2}{sup *} without detectable bands in the spectra. Possible structures of the two C{sub i}O{sub i}(Si{sub I}){sub 2} configurations are considered and discussed. Upon annealing at 220 °C, additional Si{sub I}s are captured by the C{sub i}O{sub i}(Si{sub I}){sub 2} defect leading to the formation of the C{sub i}O{sub i}(Si{sub I}){sub 3} complex, which in turn on annealing at

ZnO nanorod based low turn-on voltage LEDs with wide electroluminescence spectra

International Nuclear Information System (INIS)

Jha, S.K.; Kutsay, O.; Bello, I.; Lee, S.T.

2013-01-01

Light emitting diodes (LEDs) based on arrays of n-type ZnO Nanorods were fabricated on p-GaN films using a hydrothermal method. The LEDs emit mainly in blue and UV range of the light. Their current–Voltage (I–V) characteristics typically show a low leakage current (7.2 μA) and a high rectification ratio (3 5 5). Devices operate at a low turn-on voltage of ∼4.5 V. Photoluminescence (PL) and electroluminescence (EL) measurements suggest low density of ZnO defects; however, in some aspects density of interfacial defects still might be considerable in the studied devices. The PL emission is deconvoluted to three peaks that are located at wavelengths of 361, 381, and 397 nm, while the wide EL spectra are deconvoluted to five peaks appearing at 368, 385, 427, 474, and 515 nm. Near-band-edge (NBE) emission of p-GaN and n-ZnO was observed in both the PL and EL spectra. Deconvoluted EL spectra consist of a very wide green band with the peak at 515 nm and extending up to 650 nm (red), and a rarely reported EL emission at 474 nm. Origin of these emissions is discussed, herein. The electrical characteristics together with EL characteristics indicate potential to develop and study p-GaN/n-ZnO nanorod LEDs for white emitting applications. - Highlights: ► A low turn-on voltage (4–4.5 V) and low threshold (5 V) electroluminescence from ZnO/GaN heterostructure. ► A wide spectrum EL emission (360–700 nm) suitable for white LED application. ► EL spectra consist of a rarely reported emission band with peak at 474 nm. ► Low-temperature and solution based fabrication, which is scalable and of low cost.

Fingerprints of spin-orbital polarons and of their disorder in the photoemission spectra of doped Mott insulators with orbital degeneracy

Science.gov (United States)

Avella, Adolfo; Oleś, Andrzej M.; Horsch, Peter

2018-04-01

We explore the effects of disordered charged defects on the electronic excitations observed in the photoemission spectra of doped transition metal oxides in the Mott insulating regime by the example of the R1 -xCaxVO3 perovskites, where R = La, ⋯, Lu. A fundamental characteristic of these vanadium d2 compounds with partly filled t2 g valence orbitals is the persistence of spin and orbital order up to high doping, in contrast to the loss of magnetic order in high-Tc cuprates at low defect concentration. We study the disordered electronic structure of such doped Mott-Hubbard insulators within the unrestricted Hartree-Fock approximation and, as a result, manage to explain the spectral features that occur in photoemission and inverse photoemission. In particular, (i) the atomic multiplet excitations in the inverse photoemission spectra and the various defect-related states and satellites are qualitatively well reproduced, (ii) a robust Mott gap survives up to large doping, and (iii) we show that the defect states inside the Mott gap develop a soft gap at the Fermi energy. The soft defect-states gap, which separates the highest occupied from the lowest unoccupied states, can be characterized by a shape and a scale parameter extracted from a Weibull statistical sampling of the density of states near the chemical potential. These parameters provide a criterion and a comprehensive schematization for the insulator-metal transition in disordered systems. Our results provide clear indications that doped holes are bound to charged defects and form small spin-orbital polarons whose internal kinetic energy is responsible for the opening of the soft defect-states gap. We show that this kinetic gap survives disorder fluctuations of defects and is amplified by the long-range electron-electron interactions, whereas we observe a Coulomb singularity in the atomic limit. The small size of spin-orbital polarons is inferred by an analysis of the inverse participation ratio and by

Control of magnonic spectra in cobalt nanohole arrays: the effects of density, symmetry and defects

International Nuclear Information System (INIS)

Barman, Anjan

2010-01-01

Magnetic nanohole arrays are important systems for propagation of magnetic excitations and are among the potential candidates for magnonic crystals. A thorough investigation of magnonic band structures and the effect of the geometry of the array on them are important. Here, we present a systematic micromagnetic simulation study of magnonic modes in cobalt nanohole (antidot) arrays. In particular, we investigate the effects of the areal density and symmetry of the array and defects introduced in the array. The magnonic modes are strongly dependent on the density and the symmetry of the array but are weakly dependent on the defects. We have further investigated the modes in a tailored array consisting of equally wide hexagonal arrays with varying density. The magnonic spectrum of the tailored array contains additional modes above the modes of the constituent arrays due to the appearance of irregular domain structures at the regions joining arrays of two different types. This opens up the possibility of tuning the magnonic bands in magnetic nanohole arrays by careful design of the structure of the array.

PKA spectral effects on subcascade structures and free defect survival ratio as estimated by cascade-annealing computer simulation

International Nuclear Information System (INIS)

Muroga, Takeo

1990-01-01

The free defect survival ratio is calculated by ''cascade-annealing'' computer simulation using the MARLOWE and modified DAIQUIRI codes in various cases of Primary Knock-on Atom (PKA) spectra. The number of subcascades is calculated by ''cut-off'' calculation using MARLOWE. The adequacy of these methods is checked by comparing the results with experiments (surface segregation measurements and Transmission Electron Microscope cascade defect observations). The correlation using the weighted average recoil energy as a parameter shows that the saturation of the free defect survival ratio at high PKA energies has a close relation to the cascade splitting into subcascades. (author)

Experimental and theoretical investigation of lattice defect structures in a series of Zn, Fe-doped nonstoichiometric lithium niobate

International Nuclear Information System (INIS)

Guo Fengyun; Lue Qiang; Sun Liang; Li Hongtao; Zhen Xihe; Xu Yuheng; Zhao Liancheng

2006-01-01

A series of the double doped lithium niobate (LiNbO 3 , LN) single crystals had been grown by Czochralski method. The Curie temperatures of various concentrations doped or [Li]/[Nb] ratio LN crystals measured by differential thermal analysis (DTA) were discussed to investigate their defect structures with Safaryan et al. new approach about LN lattice defect structure using Curie temperatures calculated. Infrared transmission spectra of various concentrations doped were used to compare the investigation above. The results show that the lithium vacancy model is the more probable to describe the lattice defect structure of the doped LN single crystal

Franck-Condon Simulations including Anharmonicity of the Ã(1)A''-X̃(1)A' Absorption and Single Vibronic Level Emission Spectra of HSiCl and DSiCl.

Science.gov (United States)

Mok, Daniel W K; Lee, Edmond P F; Chau, Foo-Tim; Dyke, John M

2009-03-10

RCCSD(T) and/or CASSCF/MRCI calculations have been carried out on the X̃(1)A' and Ã(1)A'' states of HSiCl employing basis sets of up to the aug-cc-pV5Z quality. Contributions from core correlation and extrapolation to the complete basis set limit were included in determining the computed equilibrium geometrical parameters and relative electronic energy of these two states of HSiCl. Franck-Condon factors which include allowance for anharmonicity and Duschinsky rotation between these two states of HSiCl and DSiCl were calculated employing RCCSD(T) and CASSCF/MRCI potential energy functions, and were used to simulate the Ã(1)A'' ← X̃(1)A' absorption and Ã(1)A'' → X̃(1)A' single vibronic level (SVL) emission spectra of HSiCl and DSiCl. Simulated absorption and experimental LIF spectra, and simulated and observed Ã(1)A''(0,0,0) → X̃(1)A' SVL emission spectra, of HSiCl and DSiCl are in very good agreement. However, agreement between simulated and observed Ã(1)A''(0,1,0) → X̃(1)A' and Ã(1)A''(0,2,1) → X̃(1)A' SVL emission spectra of DSiCl is not as good. Preliminary calculations on low-lying excited states of HSiCl suggest that vibronic interaction between low-lying vibrational levels of the Ã(1)A'' state and highly excited vibrational levels of the ã(3)A'' is possible. Such vibronic interaction may change the character of the low-lying vibrational levels of the Ã(1)A'' state, which would lead to perturbation in the SVL emission spectra from these vibrational levels.

Probing of O2 vacancy defects and correlated magnetic, electrical and photoresponse properties in indium-tin oxide nanostructures by spectroscopic techniques

Science.gov (United States)

Ghosh, Shyamsundar; Dev, Bhupendra Nath

2018-05-01

Indium-tin oxide (ITO) 1D nanostructures with tunable morphologies i.e. nanorods, nanocombs and nanowires are grown on c-axis (0 0 0 1) sapphire (Al2O3) substrate in oxygen deficient atmosphere through pulsed laser deposition (PLD) technique and the effect of oxygen vacancies on optical, electrical, magnetic and photoresponse properties is investigated using spectroscopic methods. ITO nanostructures are found to be enriched with significant oxygen vacancy defects as evident from X-ray photoelectron and Raman spectroscopic analysis. Photoluminescence spectra exhibited intense mid-band blue emission at wavelength of region of 400-450 nm due to the electronic transition from conduction band maxima (CBM) to the singly ionized oxygen-vacancy (VO+) defect level within the band-gap. Interestingly, ITO nanostructures exhibited significant room-temperature ferromagnetism (RTFM) and the magnetic moment found proportional to concentration of VO+ defects which indicates VO+ defects are mainly responsible for the observed RTFM in nanostructures. ITO nanowires being enriched with more VO+ defects exhibited strongest RTFM as compared to other morphologies. Current voltage (I-V) characteristics of ITO nanostructures showed an enhancement of current under UV light as compared to dark which indicates such 1D nanostructure can be used as photovoltaic material. Hence, the study shows that there is ample opportunity to tailor the properties of ITOs through proper defect engineering's and such photosensitive ferromagnetic semiconductors might be promising for spintronic and photovoltaic applications.

The effect of defect types on the electronic and optical properties of graphene nanoflakes physisorbed by ionic liquids.

Science.gov (United States)

Shakourian-Fard, Mehdi; Kamath, Ganesh

2017-02-08

Defect engineering and non-covalent interaction strategies allow for dramatically tuning the optoelectronic properties of graphene. Using ab initio density functional theory (M06-2X/cc-pVDZ), we find that the nature of defects on the graphene nanoflakes (GNFs) and the size of defective GNF (DGNF) surfaces affect the binding energy (ΔE b ) of ionic liquids (ILs) and the UV-Vis absorption spectra of DGNFIL complexes. Further, our results indicate that increasing the size of DGNFs affects the geometrical structure of the surfaces and increases the binding energy of ILs by about 10%. Analysis based on AIM and EDA shows that the interactions between ILs and DGNFs are non-covalent in nature (dispersion energy being dominant) and associated with charge transfer between the IL and nanoflakes. A comparison between the ΔE b values of ILs on DGNFs, GNFs, and h-BN nanoflakes (h-BNNF) shows that the presence of defects on the GNF surfaces increases the binding energy values as follows: DGNFIL > pristine GNFIL > h-BNNFIL. Our calculations indicate that increasing the size of DGNF surfaces leads to a decrease in the HOMO-LUMO energy gap (E g ) of the DGNF surfaces. Orbital energy and density of state calculations show that the E g of DV(SW)-GNFs decreases upon IL adsorption and their Fermi energy level is shifted depending on the type of IL, thus enabling better conductivity. Reactivity descriptors generally indicate that the chemical potential (μ) and chemical hardness (η) of nanoflakes decrease upon IL adsorption, whereas the electrophilicity index (ω) increases. The UV-Vis absorption spectrum of DV-GNF and SW-GNF shows four bands in the visible spectrum which correspond to π → π* transitions with the absorption bands of SW-GNF appearing at higher wavelengths than those of DV-GNF. The most intense absorption bands in DV-GNF (λ = 348 nm) and SW-GNF (λ = 375 nm) are associated with electronic transitions HOMO-1 → LUMO+2 and HOMO → LUMO+1, respectively. In addition

Defects and impurities in silicon materials an introduction to atomic-level silicon engineering

CERN Document Server

Langouche, Guido

2015-01-01

This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

Induced defects in neutron irradiated GaN single crystals

International Nuclear Information System (INIS)

Park, I. W.; Koh, E. K.; Kim, Y. M.; Choh, S. H.; Park, S. S.; Kim, B. G.; Sohn, J. M.

2005-01-01

The local structure of defects in undoped, Si-doped, and neutron irradiated free standing GaN bulk crystals, grown by hydride vapor phase epitaxy, has been investigated by employing Raman scattering and cathodoluminescence. The GaN samples were irradiated to a dose of 2 x 10 17 neutrons in an atomic reactor at Korea Atomic Energy Research Institute. There was no appreciable change in the Raman spectra for undoped GaN samples before and after neutron irradiation. However, a forbidden transition, A 1 (TO) mode, appeared for a neutron irradiated Si-doped GaN crystal. Cathodoluminescence spectrum for the neutron irradiated Si-doped GaN crystal became much more broadened than that for the unirradiated one. The experimental results reveal the generation of defects with locally deformed structure in the wurtzite Si-doped GaN single crystal

Electrical Characterisation of electron beam exposure induced Defects in silicon

Energy Technology Data Exchange (ETDEWEB)

Danga, Helga T., E-mail: helga.danga@up.ac.za; Auret, Francois D.; Coelho, Sergio M.M.; Diale, Mmantsae

2016-01-01

The defects introduced in epitaxially grown p-type silicon (Si) during electron beam exposure were electrically characterised using deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS. In this process, Si samples were first exposed to the conditions of electron beam deposition (EBD) without metal deposition. This is called electron beam exposure (EBE) herein. After 50 minutes of EBE, nickel (Ni) Schottky contacts were fabricated using the resistive deposition method. The defect level observed using the Ni contacts had an activation energy of H(0.55). This defect has an activation energy similar to that of the I-defect. The defect level is similar to that of the HB4, a boron related defect. DLTS depth profiling revealed that H(0.55) could be detected up to a depth of 0.8 μm below the junction. We found that exposing the samples to EBD conditions without metal deposition introduced a defect which was not introduced by the EBD method. We also observed that the damage caused by EBE extended deeper into the material compared to that caused by EBD.

Combined analysis of the S and W parameters obtained from positron annihilation spectra

International Nuclear Information System (INIS)

Fedorov, A.V.; Veen, A. van; Schut, H.

2001-01-01

Variable energy positron beam analysis (PBA) has proven to be a very useful and powerful technique for the study of nanosize layer structures and point defects in various materials. Analysis of the positron annihilation spectra is usually performed with the help of the S and W parameters. By mapping the experimental points in the S-W plane the cluster points characteristic for the layers or defects can be derived. We have developed the program SWAN (S-W analysis) to enable to trace these cluster points and to calculate the fractions of the positrons annihilated at the layers or defects ascribed to the cluster points. In combination with the known computer code VEPFIT, program SWAN was successfully used for analyzing the S and W- curves for a number of samples. As an example, the analysis of SIMOX sample measured by PBA is presented. The program runs on a PC, has a user-friendly interface and is available for distribution. (orig.)

Point defects induced in LiF by low energy electrons

Energy Technology Data Exchange (ETDEWEB)

Baldacchini, Giuseppe; Montereali, Rosa Maria [ENEA, Centro Ricerche Frascati, Rome (Italy); Scacco, Augusto [Rome, Univ. (Italy). Dipt. di Fisica]|[INFM, Rome (Italy); Cremona, Marco; D`Auria, Giuliano

1997-09-01

A systematic study of the coloring of LiF crystals and films irradiated by 3 keV electrons at various temperatures was carried out analysing their absorption and luminescence spectra. The three stage behaviour of the F coloring curve as a function of the irradiation dose was revealed and the saturation of the process was identified for the first time with this kind of radiation. The kinetics of the defect formation confirmed the expectations derived from the most comprehensive theoretical model developed to explain the coloring process. The irradiation temperature was found to have an influence on both the proportion of different defects created and on their stability and the overall coloring efficiency turned out to be higher when the irradiation was performed on films. Various explanations to these observations are put forward and discussed.

Point defects induced in LiF by low energy electrons

International Nuclear Information System (INIS)

Baldacchini, Giuseppe; Montereali, Rosa Maria; Scacco, Augusto; Cremona, Marco; D'Auria, Giuliano.

1997-09-01

A systematic study of the coloring of LiF crystals and films irradiated by 3 keV electrons at various temperatures was carried out analysing their absorption and luminescence spectra. The three stage behaviour of the F coloring curve as a function of the irradiation dose was revealed and the saturation of the process was identified for the first time with this kind of radiation. The kinetics of the defect formation confirmed the expectations derived from the most comprehensive theoretical model developed to explain the coloring process. The irradiation temperature was found to have an influence on both the proportion of different defects created and on their stability and the overall coloring efficiency turned out to be higher when the irradiation was performed on films. Various explanations to these observations are put forward and discussed

Fractal spectra in generalized Fibonacci one-dimensional magnonic quasicrystals

Energy Technology Data Exchange (ETDEWEB)

Costa, C.H.O. [Departamento de Fisica Teorica e Experimental, Universidade Federal do Rio grande do Norte, 59072-970 Natal-RN (Brazil); Vasconcelos, M.S., E-mail: manoelvasconcelos@yahoo.com.br [Escola de Ciencias e Tecnologia, Universidade Federal do Rio grande do Norte, 59072-970 Natal-RN (Brazil); Barbosa, P.H.R.; Barbosa Filho, F.F. [Departamento de Fisica, Universidade Federal do Piaui, 64049-550 Teresina-Pi (Brazil)

2012-07-15

In this work we carry out a theoretical analysis of the spectra of magnons in quasiperiodic magnonic crystals arranged in accordance with generalized Fibonacci sequences in the exchange regime, by using a model based on a transfer-matrix method together random-phase approximation (RPA). The generalized Fibonacci sequences are characterized by an irrational parameter {sigma}(p,q), which rules the physical properties of the system. We discussed the magnonic fractal spectra for first three generalizations, i.e., silver, bronze and nickel mean. By varying the generation number, we have found that the fragmentation process of allowed bands makes possible the emergence of new allowed magnonic bulk bands in spectra regions that were magnonic band gaps before, such as which occurs in doped semiconductor devices. This interesting property arises in one-dimensional magnonic quasicrystals fabricated in accordance to quasiperiodic sequences, without the need to introduce some deferent atomic layer or defect in the system. We also make a qualitative and quantitative investigations on these magnonic spectra by analyzing the distribution and magnitude of allowed bulk bands in function of the generalized Fibonacci number F{sub n} and as well as how they scale as a function of the number of generations of the sequences, respectively. - Highlights: Black-Right-Pointing-Pointer Quasiperiodic magnonic crystals are arranged in accordance with the generalized Fibonacci sequence. Black-Right-Pointing-Pointer Heisenberg model in exchange regime is applied. Black-Right-Pointing-Pointer We use a theoretical model based on a transfer-matrix method together random-phase approximation. Black-Right-Pointing-Pointer Fractal spectra are characterized. Black-Right-Pointing-Pointer We analyze the distribution of allowed bulk bands in function of the generalized Fibonacci number.

Global characteristics of atomic spectra and their use for the analysis of spectra. IV. Configuration interaction effects

International Nuclear Information System (INIS)

Kucas, S.; Jonauskas, V.; Karazija, R.

1997-01-01

For pt.III see ibid., vol.52, p.639, 1995. Changes of the moments of atomic spectrum due to configuration interaction (CI), the CI strength, the average shift of the energy of a level due to its interaction with all levels of distant configuration and other global characteristics of CI effects in atoms are systematised and their expressions presented. The results of the calculation of those characteristics for the energy level spectra of the 3s3p 3 + 3s 2 3p3d configurations in Si isoelectronic series, 3p 5 3d N + 3p 6 3d N-2 4p + 3p 6 3d N-2 4f (N = 5, 6, 7, 8) in Cr, Mn, Fe and Co isoelectronic series, ns 2 np N + np N+2 at n = 2 - 5 and N = 2 - 4 in neutral atoms as well as for the characteristic emission spectra corresponding to the 3p 5 3d 9 + 3d 7 4p → 3d 8 transitions as well as for the Auger M 4.3 N 1 N 2.3 spectra in Kr and N 4.5 O 1 O 2.3 in Xe are given and compared with the same characteristics of the more complete experimental spectra. (orig.)

Carrier removal and defect behavior in p-type InP

Science.gov (United States)

Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

1992-01-01

A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

An investigation of the role of defect levels on the radiation response of synthetic diamond crystals when used as sensors for the detection of mammography X-rays.

Science.gov (United States)

Ade, Nicholas

2017-09-01

This study evaluates the role of defects on the performances of synthetic diamond sensors on exposure to mammography X-rays. Through systematic investigations, the main cause of instability of response of examined sensors necessitating pre-irradiation was isolated and ascribed to the presence of ambient light which has the effect of emptying shallow trapping levels. The changes in response between measurements in light and dark conditions varied from 2.8 ± 1.2% to 63.0 ± 0.3%. Sensitivities between 0.4 and 6.7nCGy -1 mm -3 determined for the sensors varied with defect levels. The study indicates that differences in crystal quality due to the presence and influence of defects would cause a discrepancy in the dosimetric performances of various diamond detectors. Once a sensor plate is selected (based on the influence of defect levels) and coupled to the probe housing with the response of the diamond sensor stabilised and appropriately shielded from ambient light, daily priming is not needed. Copyright © 2017 Elsevier Ltd. All rights reserved.

Evaluation of induced color changes in chicken breast meat during simulation of pink color defect.

Science.gov (United States)

Holownia, K; Chinnan, M S; Reynolds, A E; Koehler, P E

2003-06-01

The objective of the study was to establish a pink threshold and simulate the pink defect in cooked chicken breast meat with treatment combinations that would induce significant changes in the color of raw and cooked meat. The subjective pink threshold used in judging pink discoloration was established at a* = 3.8. Samples of three color groups (normal, lighter than normal, and darker than normal) of boneless, skinless chicken breast muscles were selected based on instrumental color values. The in situ changes were induced using sodium chloride, sodium tripolyphosphate, sodium erythorbate, and sodium nitrite at two levels: present and not present. Fillets in all treatments were subjected to individual injections, followed by tumbling, cooking, and chilling. Samples were analyzed for color [lightness (L*), red/green axis (a*), yellow/blue axis (b*)] and reflectance spectra. Simulation of the pink defect was achieved in eight of the 16 treatment combinations when sodium nitrite was present and in an additional two treatment combinations when it was absent. Pinking in cooked samples was affected (P meat color. Results confirmed that it was possible to simulate the undesired pinking in cooked chicken white meat when in situ conditions were induced by sodium chloride, sodium tripolyphosphate, and sodium nitrite. The continuation of the simulation study can aid in developing alternative processing methods to eliminate potential pink defects.

First-principles engineering of charged defects for two-dimensional quantum technologies

Science.gov (United States)

Wu, Feng; Galatas, Andrew; Sundararaman, Ravishankar; Rocca, Dario; Ping, Yuan

2017-12-01

Charged defects in two-dimensional (2D) materials have emerging applications in quantum technologies such as quantum emitters and quantum computation. The advancement of these technologies requires a rational design of ideal defect centers, demanding reliable computation methods for the quantitatively accurate prediction of defect properties. We present an accurate, parameter-free, and efficient procedure to evaluate the quasiparticle defect states and thermodynamic charge transition levels of defects in 2D materials. Importantly, we solve critical issues that stem from the strongly anisotropic screening in 2D materials, that have so far precluded the accurate prediction of charge transition levels in these materials. Using this procedure, we investigate various defects in monolayer hexagonal boron nitride (h -BN ) for their charge transition levels, stable spin states, and optical excitations. We identify CBVN (nitrogen vacancy adjacent to carbon substitution of boron) to be the most promising defect candidate for scalable quantum bit and emitter applications.

The high-frequency ESR spectra of the syntetic diamond and nanodiamonds type Ib at low temperature

International Nuclear Information System (INIS)

Khatsko, E.; Kobets, M.; Dergachev, K.; Kulbickas, A.; Rasteniene, L.; Vaisnoras, R.

2013-01-01

The ESR absorption spectra of nonirradiated and irradiated (by electrons with an energy of 2 MeV) bulk diamond and nanodiamond powder of type Ib have been studied at a wide range of frequencies (70-20 GHz) and temperature (4.2-0 K) by ESR method. It is shown, that in the ESR spectrum of bulk diamond absorption lines of ion nickel catalyst Ni +a nd a paramagnetic single center of the nitrogen N 0 is observed. Absorption lines of the paramagnetic centers with dangling bonds on the nanodiamond surface (surface defects) in the ESR spectra are obtained.

Influence of increasing nuclear charge on the Rydberg spectra of Xe, Cs+, and Ba++: Correlation, term dependence, and autoionization

International Nuclear Information System (INIS)

Hill, W.T. III; Cheng, K.T.; Johnson, W.R.; Lucatorto, T.B.; McIlrath, T.J.; Sugar, J.

1982-01-01

The first experimental-theoretical study of Rydberg autoionizing resonances along an isoelectronic sequence is presented. This analysis demonstrates the intimate connection between electron-electron correlation, term-dependence, and autoionization and underscores the power of multichannel quantum defect theory in analyzing complex spectra

Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Yang, J.; Du, H. W.; Li, Y.; Gao, M.; Wan, Y. Z.; Xu, F. [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai, 200444 (China); Ma, Z. Q., E-mail: zqma@shu.edu.cn [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai, 200444 (China); Instrumental Analysis & Research Center, Shanghai University, Shanghai, 200444 (China)

2016-08-15

The carriers’ behavior in neutral region (NTR) and space charged region (SCR) of Cu(In,Ga)Se{sub 2} thin film based solar cells has been investigated by temperature dependent photoluminescence (PL-T), electroluminescence (EL-T) and current-voltage (IV-T) from 10 to 300 K. PL-T spectra show that three kinds of defects, namely V{sub Se}, In{sub Cu} and (In{sub Cu}+V{sub Cu}), are localized within the band gap of NTR and SCR of CIGS layer, corresponding to the energy levels of E{sub C}-0.08, E{sub C}-0.20 and E{sub C}-0.25 eV, respectively. The In{sub Cu} and (In{sub Cu}+V{sub Cu}) deep level defects are non-radiative recombination centers at room temperature. The IV-T and EL-T analysis reveals that the injection modes of electrons from ZnO conduction band into Cu(In,Ga)Se{sub 2} layer are tunneling, thermally-excited tunneling and thermionic emission under 10-40, 60-160, and 180-300 K, respectively. At 10-160 K, the electrons tunnel into (In{sub Cu}+V{sub Cu}) and V{sub se} defect levels in band gap of SCR and the drifting is involved in the emission bands at 0.96 and 1.07 eV, which is the direct evidence for a tunneling assisted recombination. At 180-300 K, the electrons are directly injected into the Cu(In,Ga)Se{sub 2} conduction band, and the emission of 1.13 eV are ascribed to the transitions from the conduction band to the valence band.

Defect engineering of ZnO

Energy Technology Data Exchange (ETDEWEB)

Weber, M.H. [Center for Materials Research and Department of Physics and Astronomy, Washington State University, Pullman, WA 99164-2711 (United States)], E-mail: m_weber@wsu.edu; Selim, F.A.; Solodovnikov, D.; Lynn, K.G. [Center for Materials Research and Department of Physics and Astronomy, Washington State University, Pullman, WA 99164-2711 (United States)

2008-10-31

The defect responsible for the transparent to red color change of nominally undoped ZnO bulk single crystals is investigated. Upon annealing in the presence of metallic Zn as reported by Halliburton et al. and also Ti and Zr a native defect forms with an energy level about 0.7 eV below the conduction band. This change is reversible upon annealing in oxygen. Optical transmission data along with positron depth profiles and annealing studies are combined to identify the defect as oxygen vacancies. Vacancy clustering occurs at about 500 deg. C if isolated zinc and oxygen vacancies. In the absence of zinc vacancies, clusters form at about 800 deg. C.

Defect engineering of ZnO

International Nuclear Information System (INIS)

Weber, M.H.; Selim, F.A.; Solodovnikov, D.; Lynn, K.G.

2008-01-01

The defect responsible for the transparent to red color change of nominally undoped ZnO bulk single crystals is investigated. Upon annealing in the presence of metallic Zn as reported by Halliburton et al. and also Ti and Zr a native defect forms with an energy level about 0.7 eV below the conduction band. This change is reversible upon annealing in oxygen. Optical transmission data along with positron depth profiles and annealing studies are combined to identify the defect as oxygen vacancies. Vacancy clustering occurs at about 500 deg. C if isolated zinc and oxygen vacancies. In the absence of zinc vacancies, clusters form at about 800 deg. C

IDEN2-A program for visual identification of spectral lines and energy levels in optical spectra of atoms and simple molecules

Science.gov (United States)

Azarov, V. I.; Kramida, A.; Vokhmentsev, M. Ya.

2018-04-01

The article describes a Java program that can be used in a user-friendly way to visually identify spectral lines observed in complex spectra with theoretically predicted transitions between atomic or molecular energy levels. The program arranges various information about spectral lines and energy levels in such a way that line identification and determination of positions of experimentally observed energy levels become much easier tasks that can be solved fast and efficiently.

An Mcm10 Mutant Defective in ssDNA Binding Shows Defects in DNA Replication Initiation.

Science.gov (United States)

Perez-Arnaiz, Patricia; Kaplan, Daniel L

2016-11-20

Mcm10 is an essential protein that functions to initiate DNA replication after the formation of the replication fork helicase. In this manuscript, we identified a budding yeast Mcm10 mutant (Mcm10-m2,3,4) that is defective in DNA binding in vitro. Moreover, this Mcm10-m2,3,4 mutant does not stimulate the phosphorylation of Mcm2 by Dbf4-dependent kinase (DDK) in vitro. When we expressed wild-type levels of mcm10-m2,3,4 in budding yeast cells, we observed a severe growth defect and a substantially decreased DNA replication. We also observed a substantially reduced replication protein A- chromatin immunoprecipitation signal at origins of replication, reduced levels of DDK-phosphorylated Mcm2, and diminished Go, Ichi, Ni, and San (GINS) association with Mcm2-7 in vivo. mcm5-bob1 bypasses the growth defect conferred by DDK-phosphodead Mcm2 in budding yeast. However, the growth defect observed by expressing mcm10-m2,3,4 is not bypassed by the mcm5-bob1 mutation. Furthermore, origin melting and GINS association with Mcm2-7 are substantially decreased for cells expressing mcm10-m2,3,4 in the mcm5-bob1 background. Thus, the origin melting and GINS-Mcm2-7 interaction defects we observed for mcm10-m2,3,4 are not explained by decreased Mcm2 phosphorylation by DDK, since the defects persist in an mcm5-bob1 background. These data suggest that DNA binding by Mcm10 is essential for the initiation of DNA replication. Copyright © 2016 Elsevier Ltd. All rights reserved.

Beta spectra. II-Positron spectra

International Nuclear Information System (INIS)

Grau, A.; Garcia-Torano, E.

1981-01-01

Using the Fermi theory of beta decay, the beta spectra for 30 positron emitters have been computed, introducing a correction factor for unique forbidden transitions. The spectra are ploted vs. energy, once normalised, and tabulated with the related Fermi functions. The average and median energies are calculated. (author)

BETA SPECTRA. I. Negatrons spectra

International Nuclear Information System (INIS)

Grau Malonda, A.; Garcia-Torano, E.

1978-01-01

Using the Fermi theory of beta decay, the beta spectra for 62 negatrons emitters have been computed introducing a correction factor for unique forbidden transitions. These spectra are plotted vs. energy, once normal i sed, and tabulated with the related Fermi functions. The average and median energies are calculated. (Author)

Altering graphene line defect properties using chemistry

Science.gov (United States)

Vasudevan, Smitha; White, Carter; Gunlycke, Daniel

2012-02-01

First-principles calculations are presented of a fundamental topological line defect in graphene that was observed and reported in Nature Nanotech. 5, 326 (2010). These calculations show that atoms and smaller molecules can bind covalently to the surface in the vicinity of the graphene line defect. It is also shown that the chemistry at the line defect has a strong effect on its electronic and magnetic properties, e.g. the ferromagnetically aligned moments along the line defect can be quenched by some adsorbates. The strong effect of the adsorbates on the line defect properties can be understood by examining how these adsorbates affect the boundary-localized states in the vicinity of the Fermi level. We also expect that the line defect chemistry will significantly affect the scattering properties of incident low-energy particles approaching it from graphene.

Hydrostatic pressure effects on oxygen-related irradiation-produced defects in silicon

International Nuclear Information System (INIS)

Stein, H.J.; Samara, G.A.

1989-01-01

Hydrostatic pressure has been used to investigate the E c -0.164 eV acceptor level for the oxygen-vacancy (O-V) defect in γ-ray irradiated Si, and the annealing/formation of oxygen-related defects in neutron-irradiated Si. The acceptor level is found to move closer to the conduction band and away from the valence band. There is also a relatively large inward (outward) breathing mode lattice relaxation accompanying electron emission (capture) from this level. Both results reflect the antibonding nature of the level and are qualitatively consistent with the Watkins-Corbett model for the O-V defect. The annealing rate was found to increase with pressure for the O-V defect at 350 0 C with a derived activation volume of -4.5A 3 /defect, where the negative sign implies inward relaxation (contraction) on annealing. Pressure has relatively little effect on annealing of the C-Si-O C(3) defect which is interstitial in nature, but strongly favors the formation of the dioxygen defect. The intensity of the O 2 -V band after annealing at 20 kbar is 5 times higher than that following similar annealing at 0 kbar. This intensity is higher than that achievable by any isochronal or isothermal annealing steps at 0 kbar. These results are discussed qualitatively in terms of models for the various defects. (author)

Ion channeling study of defects in multicomponent semiconductor compounds

International Nuclear Information System (INIS)

Turos, A.; Nowicki, L.; Stonert, A.

2002-01-01

Compound semiconductor crystals are of great technological importance as basic materials for production of modern opto- and microelectronic devices. Ion implantation is one of the principal techniques for heterostructures processing. This paper reports the results of the study of defect formation and transformation in binary and ternary semiconductor compounds subjected to ion implantation with ions of different mass and energy. The principal analytical technique was He-ion channeling. The following materials were studied: GaN and InGaN epitaxial layers. First the semi empirical method of channeling spectra analysis for ion implanted multicomponent single crystal was developed. This method was later complemented by the more sophisticated method based on the Monte Carlo simulation of channeling spectra. Next, the damage buildup in different crystals and epitaxial layers as a function of the implantation dose was studied for N, Mg, Te, and Kr ions. The influence of the substrate temperature on the defect transformations was studied for GaN epitaxial layers implanted with Mg ions. Special attention was devoted to the study of growth conditions of InGaN/GaN/sapphire heterostructures, which are important component of the future blue laser diodes. In-atom segregation and tetragonal distortion of the epitaxial layer were observed and characterized. Next problem studied was the incorporation of hydrogen atoms in GaAs and GaN. Elastic recoil detection (ERDA) and nuclear reaction analysis (NRA) were applied for the purpose. (author)

Evolution of defects in a multicomponent glass irradiated by 1 MeV electrons

International Nuclear Information System (INIS)

Wang Qingyan; Geng Hongbin; Sun Chengyue; Zhang Zhonghua; He Shiyu

2010-01-01

The optical properties and microstructural degradation of a multicomponent glass after exposure to 1 MeV electrons for fluences of 10 13 to 10 16 e - /cm 2 , as well as the recovery during annealing at room temperature (RT) for the fluence of 10 16 e - /cm 2 , are investigated. The non-bridging oxygen hole centers (NBOHCs), as well as trapped electrons (TEs), are mainly attributed to optical absorption bands and paramagnetic spectra. In comparison of the exponential curves, the in-growth kinetics for each type of defect with increasing fluence are separable, and a new linearly-combined exponential model is used to describe the structural responses during irradiation. Accordingly, RT bleaching curves of defects follow a linearly-combined exponential decay function. Consistent results from optical and paramagnetic signals suggest that this linearly-combined model provides a reasonable kinetic description of the growth and bleaching process of defects.

Luminescence and defects creation in Ce3+-doped YAlO3 and Lu0.3Y0.7AlO3 crystals

International Nuclear Information System (INIS)

Blazek, K.; Nejezchleb, K.; Krasnikov, A.; Savikhina, T.; Zazubovich, S.; Nikl, M.

2005-01-01

Luminescence, energy transfer and defects creation processes were studied for the Ce 3+ -doped YAlO 3 and Lu x Y 1-x AlO 3 (x=0.3) crystals in the temperature range 4.2-300 K under selective photoexcitation in the energy range 3.5-11.5 eV. For the first time, defects creation spectra were measured and analyzed. Influence of the charge and ionic radii of co-doping ions on the luminescence and defects creation efficiency was considered. The origin of the defects created and possible mechanisms of their formation were discussed. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Neutron spectra and level density parameters from 16O + 12C fusion reaction

International Nuclear Information System (INIS)

Kasagi, J.; Remington, B.; Galonsky, A.; Haas, F.; Racca, R.; Prosser, F.W.

1985-01-01

Residues following 16 O + 12 C fusion were identified by their characteristic γ-rays. For several transitions in 23 Mg, 25 Mg, and 26 Al coincident neutron spectra were measured at six angles. Through use of the evaporation code CASCADE, comparisons were made of these spectra with predictions of the statistical model at five 16 O projectile energies between 43.2 and 56.0 MeV. The results require an excitation energy dependence for the effective radius parameter r 0 which determines the spin cutoff factor

Evaluation of vacancy-type defects in ZnO by the positron annihilation lifetime spectroscopy

International Nuclear Information System (INIS)

Ono, R.; Togimitsu, T.; Sato, W.

2015-01-01

Thermal behavior of vacancy-type defects in polycrystalline ZnO was studied by the positron annihilation lifetime spectroscopy. Two-component analysis of the PALS spectra revealed that the defect-related longer-lifetime component decreases as the annealing temperature is raised, and almost disappears within 15 min when annealed at 1,273 K. We also found that the intensity of this component decreases with increasing density of the annealed ZnO pellets; however, little density dependence was seen in its lifetime. These observations evidently suggest that this component having long lifetime of about 400 ps corresponds to the positrons trapped in grain boundaries in the polycrystalline ZnO. (author)

Electrical fingerprint of pipeline defects

International Nuclear Information System (INIS)

Mica, Isabella; Polignano, Maria Luisa; Marco, Cinzia De

2004-01-01

Pipeline defects are dislocations that connect the source region of the transistor with the drain region. They were widely reported to occur in CMOS, BiCMOS devices and recently in SOI technologies. They can reduce device yield either by affecting the devices functionality or by increasing the current consumption under stand-by conditions. In this work the electrical fingerprint of these dislocations is studied, its purpose is to enable us to identify these defects as the ones responsible for device failure. It is shown that the pipeline defects are responsible for a leakage current from source to drain in the transistors. This leakage has a resistive characteristic and it is lightly modulated by the body bias. It is not sensitive to temperature; vice versa the off-current of a good transistor exhibits the well-known exponential dependence on 1/T. The emission spectrum of these defects was studied and compared with the spectrum of a good transistor. The paper aims to show that the spectrum of a defective transistor is quite peculiar; it shows well defined peaks, whereas the spectrum of a good transistor under saturation conditions is characterized by a broad spectral light emission distribution. Finally the deep-level transient spectroscopy (DLTS) is tried on defective diodes

Higher O-GlcNAc Levels Are Associated with Defects in Progenitor Proliferation and Premature Neuronal Differentiation during in-Vitro Human Embryonic Cortical Neurogenesis

Directory of Open Access Journals (Sweden)

Shama Parween

2017-12-01

Full Text Available The nutrient responsive O-GlcNAcylation is a dynamic post-translational protein modification found on several nucleocytoplasmic proteins. Previous studies have suggested that hyperglycemia induces the levels of total O-GlcNAcylation inside the cells. Hyperglycemia mediated increase in protein O-GlcNAcylation has been shown to be responsible for various pathologies including insulin resistance and Alzheimer's disease. Since maternal hyperglycemia during pregnancy is associated with adverse neurodevelopmental outcomes in the offspring, it is intriguing to identify the effect of increased protein O-GlcNAcylation on embryonic neurogenesis. Herein using human embryonic stem cells (hESCs as model, we show that increased levels of total O-GlcNAc is associated with decreased neural progenitor proliferation and premature differentiation of cortical neurons, reduced AKT phosphorylation, increased apoptosis and defects in the expression of various regulators of embryonic corticogenesis. As defects in proliferation and differentiation during neurodevelopment are common features of various neurodevelopmental disorders, increased O-GlcNAcylation could be one mechanism responsible for defective neurodevelopmental outcomes in metabolically compromised pregnancies such as diabetes.

High-resolution measurements and multichannel quantum defect analysis of spectral line shapes of autoionizing Rydberg series

International Nuclear Information System (INIS)

Ueda, Kiyoshi

1997-01-01

Spectral line shapes for autoionizing Rydberg series are briefly reviewed within the framework of multichannel quantum defect theory (MQDT). Recent high-resolution measurements and MQDT analysis for the spectra line shapes are reviewed for the mp 5 ( 2 P 1/2 )ns ' and nd ' J=1 odd spectra of the Ar, Kr, and Xe atoms (m=3,4,5 for Ar, Kr, and Xe) and the 3p 5 ( 2 P 1/2 )nd ' J=2 and 3 odd spectra of Ar*3p 5 4p excited atoms. Some results are also discussed for the Ca 4p( 2 P 1/2,3/2 )ns and nd J=1 odd spectrum and the Ba 5d( 2 P 5/2 )nd J=1 odd spectrum

Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study

Science.gov (United States)

Juda, U.; Scheerer, O.; Höhne, M.; Riemann, H.; Schilling, H.-J.; Donecker, J.; Gerhardt, A.

1996-09-01

A monoclinic 1-platinum defect recently detected was investigated more thoroughly by electron paramagnetic resonance (EPR). The defect is one of the dominating defects in platinum doped silicon. With a perfect reproducibility it is observed in samples prepared from n-type silicon as well as from p-type silicon, in float zone (FZ) silicon as well as in Czochralski (Cz) silicon. Its concentration varies with the conditions of preparation and nearly reaches that of isolated substitutional platinum in Cz silicon annealed for 2 h at 540 °C after quenching from the temperature of platinum diffusion. Because of its concentration which in Cz-Si exceeds that in FZ-Si the defect is assumed to be oxygen-related though a hyperfine structure with 17O could not be resolved. The defect causes a level close to the valence band. This is concluded from variations of the Fermi level and from a discussion of the spin Hamiltonian parameters. In photo-EPR experiments the defect is coupled to recently detected acceptorlike self-interstitial related defects (SIRDs); their level position turns out to be near-midgap. These defects belong to the lifetime limiting defects in Pt-doped Si.

IUPAC critical evaluation of the rotational–vibrational spectra of water vapor, Part III: Energy levels and transition wavenumbers for H216O

International Nuclear Information System (INIS)

Tennyson, Jonathan; Bernath, Peter F.; Brown, Linda R.; Campargue, Alain; Császár, Attila G.; Daumont, Ludovic; Gamache, Robert R.; Hodges, Joseph T.; Naumenko, Olga V.; Polyansky, Oleg L.; Rothman, Laurence S.; Vandaele, Ann Carine; Zobov, Nikolai F.; Al Derzi, Afaf R.; Fábri, Csaba; Fazliev, Alexander Z.; Furtenbacher, Tibor

2013-01-01

This is the third of a series of articles reporting critically evaluated rotational–vibrational line positions, transition intensities, and energy levels, with associated critically reviewed labels and uncertainties, for all the main isotopologues of water. This paper presents experimental line positions, experimental-quality energy levels, and validated labels for rotational–vibrational transitions of the most abundant isotopologue of water, H 2 16 O. The latest version of the MARVEL (Measured Active Rotational–Vibrational Energy Levels) line-inversion procedure is used to determine the rovibrational energy levels of the electronic ground state of H 2 16 O from experimentally measured lines, together with their self-consistent uncertainties, for the spectral region up to the first dissociation limit. The spectroscopic network of H 2 16 O containstwo components, an ortho (o) and a para (p) one. For o-H 2 16 O and p-H 2 16 O, experimentally measured, assigned, and labeled transitions were analyzed from more than 100 sources. The measured lines come from one-photon spectra recorded at room temperature in absorption, from hot samples with temperatures up to 3000 K recorded in emission, and from multiresonance excitation spectra which sample levels up to dissociation. The total number of transitions considered is 184 667 of which 182 156 are validated: 68 027 between para states and 114 129 ortho ones. These transitions give rise to 18 486 validated energy levels, of which 10 446 and 8040 belong to o-H 2 16 O and p-H 2 16 O, respectively. The energy levels, including their labeling with approximate normal-mode and rigid-rotor quantum numbers, have been checked against ones determined from accurate variational nuclear motion computations employing exact kinetic energy operators as well as against previous compilations of energy levels. The extensive list of MARVEL lines and levels obtained are deposited in the supplementary data of this paper, as well as in a

Interference spectra induced by a bichromatic field in the excited state of a three-level atom

International Nuclear Information System (INIS)

Mavroyannis, C.

1998-01-01

The interference spectra for the excited state of a three-level atom have been considered, where the strong and the weak atomic transitions leading to an electric dipole allowed excited state and to a metastable excited state are driven by resonant and nonresonant laser fields, respectively. In the low intensity limit of the strong laser field, there are two short lifetime excitations, the spontaneous one described by the weak signal field and the one induced by the strong laser field, both of which appear at the same frequency, and a long lifetime excitation induced by the weak laser field. The maximum intensities (heights) of the two peaks describing the short lifetime excitations take equal positive and negative values and, therefore, cancel each other out completely, while the long lifetime excitation dominates. This indicates the disappearance of the short lifetime excitations describing the strong atomic transition for a period equal to the lifetime of the long lifetime excitation, which is roughly equal to half of the lifetime of the metastable state. The computed spectra have been graphically presented and discussed at resonance and for finite detunings. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

The application of an optical Fourier spectrum analyzer on detecting defects in mass-produced satellite photographs

Science.gov (United States)

Athale, R.; Lee, S. H.

1976-01-01

Various defects in mass-produced pictures transmitted to earth from a satellite are investigated. It is found that the following defects are readily detectable via Fourier spectrum analysis: (1) bit slip, (2) breakup causing loss of image, and (3) disabled track at the top of the imagery. The scratches made on the film during mass production, which are difficult to detect by visual observation, also show themselves readily in Fourier spectrum analysis. A relation is established between the number of scratches, their width and depth and the intensity of their Fourier spectra. Other defects that are found to be equally suitable for Fourier spectrum analysis or visual (image analysis) detection are synchronous loss without blurring of image, and density variation in gray scale. However, the Fourier spectrum analysis is found to be unsuitable for detection of such defects as pin holes, annotation error, synchronous loss with blurring of images, and missing image in the beginning of the work order. The design of an automated, real time system, which will reject defective films, is treated.

Vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association with Mayer-Rokitansky-Küster-Hauser syndrome in co-occurrence

DEFF Research Database (Denmark)

Bjørsum-Meyer, Thomas; Herlin, Morten; Qvist, Niels

2016-01-01

Background: The vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome are rare conditions. We aimed to present two cases with the vertebral defect, anal atresia, cardiac...... defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser co-occurrence from our local surgical center and through a systematic literature search detect published cases. Furthermore, we aimed to collect existing knowledge...... in the embryopathogenesis and genetics in order to discuss a possible link between the vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome. Case presentation: Our first case was a white girl...

Defect phase diagram for doping of Ga2O3

Science.gov (United States)

Lany, Stephan

2018-04-01

For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO2), and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor) center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO2) conditions. Considering further the stability constraints due to sublimation of molecular Ga2O, specific predictions of optimized pO2 and Si dopant concentrations are given. The incomplete passivation of dopant-defect complexes in β-Ga2O3 suggests a design rule for metastable doping above the solubility limit.

Background noise spectra of global seismic stations

Energy Technology Data Exchange (ETDEWEB)

Wada, M.M.; Claassen, J.P.

1996-08-01

Over an extended period of time station noise spectra were collected from various sources for use in estimating the detection and location performance of global networks of seismic stations. As the database of noise spectra enlarged and duplicate entries became available, an effort was mounted to more carefully select station noise spectra while discarding others. This report discusses the methodology and criteria by which the noise spectra were selected. It also identifies and illustrates the station noise spectra which survived the selection process and which currently contribute to the modeling efforts. The resulting catalog of noise statistics not only benefits those who model network performance but also those who wish to select stations on the basis of their noise level as may occur in designing networks or in selecting seismological data for analysis on the basis of station noise level. In view of the various ways by which station noise were estimated by the different contributors, it is advisable that future efforts which predict network performance have available station noise data and spectral estimation methods which are compatible with the statistics underlying seismic noise. This appropriately requires (1) averaging noise over seasonal and/or diurnal cycles, (2) averaging noise over time intervals comparable to those employed by actual detectors, and (3) using logarithmic measures of the noise.

Exome sequencing in 32 patients with anophthalmia/microphthalmia and developmental eye defects.

Science.gov (United States)

Slavotinek, A M; Garcia, S T; Chandratillake, G; Bardakjian, T; Ullah, E; Wu, D; Umeda, K; Lao, R; Tang, P L-F; Wan, E; Madireddy, L; Lyalina, S; Mendelsohn, B A; Dugan, S; Tirch, J; Tischler, R; Harris, J; Clark, M J; Chervitz, S; Patwardhan, A; West, J M; Ursell, P; de Alba Campomanes, A; Schneider, A; Kwok, P-Y; Baranzini, S; Chen, R O

2015-11-01

Anophthalmia/microphthalmia (A/M) is a genetically heterogeneous birth defect for which the etiology is unknown in more than 50% of patients. We used exome sequencing with the ACE Exome(TM) (Personalis, Inc; 18 cases) and UCSF Genomics Core (21 cases) to sequence 28 patients with A/M and four patients with varied developmental eye defects. In the 28 patients with A/M, we identified de novo mutations in three patients (OTX2, p.(Gln91His), RARB, p.Arg387Cys and GDF6, p.Ala249Glu) and inherited mutations in STRA6 in two patients. In patients with developmental eye defects, a female with cataracts and cardiomyopathy had a de novo COL4A1 mutation, p.(Gly773Arg), expanding the phenotype associated with COL4A1 to include cardiomyopathy. A male with a chorioretinal defect, microcephaly, seizures and sensorineural deafness had two PNPT1 mutations, p.(Ala507Ser) and c.401-1G>A, and we describe eye defects associated with this gene for the first time. Exome sequencing was efficient for identifying mutations in pathogenic genes for which there is no clinical testing available and for identifying cases that expand phenotypic spectra, such as the PNPT1 and COL4A1-associated disorders described here. © 2014 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Phosphorus doping of Si nanocrystals: Interface defects and charge compensation

International Nuclear Information System (INIS)

Stegner, A.R.; Pereira, R.N.; Klein, K.; Wiggers, H.; Brandt, M.S.; Stutzmann, M.

2007-01-01

Using electron paramagnetic resonance (EPR), Fourier-transform infrared absorption (FTIR) and temperature programmed desorption (TPD), we have investigated the doping of silicon nanocrystals (Si-ncs) and the interaction between intrinsic defects and dopants. Si-ncs were produced in a low-pressure microwave plasma reactor using silane as precursor gas. Phosphorus doping was achieved by addition of phosphine to the precursor gas. The low temperature EPR spectra of all P-doped samples display a line at g=1.998, which is the fingerprint of substitutional P in crystalline silicon for [P]>10 18 cm -3 . In addition, the characteristic hyperfine signature of P in Si is also observed for samples with nominal P doping levels below 10 19 cm -3 . Two more features are observed in our EPR spectra: a broad band located at g=2.0056, due to isotropic Si dangling bonds (Si-dbs), and an axially symmetric powder pattern (g perpendicular =2.0087,g parallel =2.0020) arising from Si-dbs at the interface between the crystalline Si core and a native oxide shell. The formation of this oxide layer and the presence of different H-termination configurations are revealed by FTIR spectroscopy. The density of Si-dbs is reduced in P-doped samples, indicating a sizable compensation of the doping by Si-dbs. This compensation effect was verified by H desorption, which enhances the density of Si-dbs, in combination with TPD and FTIR

Extended defects in MBE-grown CdTe-based solar cells

Energy Technology Data Exchange (ETDEWEB)

Wichrowska, Karolina; Wosinski, Tadeusz; Kret, Slawomir; Chusnutdinow, Sergij; Karczewski, Grzegorz [Institute of Physics, Polish Academy of Sciences, Warsaw (Poland); Rawski, Michal [Analytical Laboratory, Maria Curie-Sklodowska University, Lublin (Poland); Yastrubchak, Oksana [Institute of Physics, Maria Curie-Sklodowska University, Lublin (Poland)

2015-08-15

Extended defects in the p -ZnTe/n -CdTe heterojunctions grown by the molecular-beam epitaxy technique on two different substrates, GaAs and CdTe, have been investigated by deep-level transient spectroscopy (DLTS) and transmission electron microscopy (TEM). Four hole traps, called H1 to H4, and one electron trap, called E3, have been revealed in the DLTS spectra measured for the heterojunctions grown on the GaAs substrates. The H1, H3, H4 and E3 traps have been attributed to the electronic states of dislocations on the ground of their logarithmic capture kinetics. The DLTS peaks associated with the H1 and E3 traps were not observed in the DLTS spectra measured for the heterojunction grown on the CdTe substrate. They are most likely associated with threading dislocations generated at the mismatched interface with the GaAs substrate. Cross-sectional TEM images point out that they are dislocations of the 60 -type. In both the types of heterojunctions the H4 trap was observed only under forward-bias filling pulse, suggesting that this trap is associated with the CdTe/ZnTe interface. In addition, TEM images revealed also the presence of intrinsic and extrinsic stacking faults in the CdTe layers, which may considerably affect their electronic properties. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The Use of Kramers-Kronig Relations for Verification of Quality of Ferrite Magnetic Spectra

Directory of Open Access Journals (Sweden)

Ponomarenko Nikolajs

2015-12-01

Full Text Available The complex initial permeability (CIP as a function of frequency is one of the main properties of ferrites. This characteristic (CIP is measured experimentally, therefore there can be found noisy, doubtful or incomplete parts of the spectrum. Thus there is a need for a method of evaluation of quality of CIP. In this article for evaluation of the quality of experimental CIP spectra of polycrystalline ferrite materials the KKR (Kramers-Kronig relations are used. In order to apply KKR to experimentally measured data (i.e. data with finite limits the method of transforming these integral relations into summation relations with finite limits is developed and described. This method can be used only for CIP given over the wide frequency rage, so that the imaginary part of CIP is fully presented. Using KKR with the help of CIP spectra model (based on the effects coming from polycrystal grain sizes and defects distribution partly removes aforementioned limit. Thus with the help of the model we can also make CIP spectra reconstruction (in cases when CIP is noisy or incomplete and CIP spectra decomposition.

Electrically active sodium-related defect centres in silicon

DEFF Research Database (Denmark)

Dahl, Espen; Madsbøll, J.; Søiland, A.-K.

2013-01-01

Electrically active defect centres related to sodium in silicon have been examined with deep level transient spectroscopy, and their recombination potential analysed with the microwave photoconductive decay technique. In order to investigate the entire silicon band gap for defect centres, both p-...

Birth Defects

Science.gov (United States)

A birth defect is a problem that happens while a baby is developing in the mother's body. Most birth defects happen during the first 3 months of ... in the United States is born with a birth defect. A birth defect may affect how the ...

Investigation of defects in electron-irradiated diamond of the type Ia by positron annihilation

International Nuclear Information System (INIS)

Novikov, N.V.; Ositinskaya, T.D.; Mikhalenkov, V.S.; Chernyashevskij, A.V.; Shakhovtsov, V.I.; AN Ukrainskoj SSR, Kiev; AN Ukrainskoj SSR, Kiev

1997-01-01

To produce vacancy defects, type Ia diamond was irradiated with 3.5 MeV electrons at doses of 5 centre dot 10 16 , 2 centre dot 10 17 , 4 centre dot 10 17 , and 2 centre dot 10 18 e/cm -2 . After each dose, the specimen was investigated using positron annihilation (ACAR), optical spectroscopy in IR, visible regions, and EPR. From ACAR spectra, the S-parameters were found and positron trapping rates were determined. Their behaviour with increasing irradiation doses shows that, in type Ia diamond along with neutral vacancies V degree, deeper traps of positrons are formed, which are most likely vacancies in the negative charge state V - . Specific trapping rates of the V 0 and V - defects are found to be 1.3 centre dot 10 15 and 3.8 centre dot 10 15 s -1 , respectively; trapping cross sections for these defects are also estimated

Atomic Spectra Database (ASD)

Science.gov (United States)

SRD 78 NIST Atomic Spectra Database (ASD) (Web, free access)   This database provides access and search capability for NIST critically evaluated data on atomic energy levels, wavelengths, and transition probabilities that are reasonably up-to-date. The NIST Atomic Spectroscopy Data Center has carried out these critical compilations.

Spontaneous emission spectra and simulating multiple spontaneous generation coherence in a five-level atomic medium

International Nuclear Information System (INIS)

Li Jiahua; Liu Jibing; Qi Chunchao; Chen Aixi

2006-01-01

We investigate the features of the spontaneous emission spectra in a coherently driven cold five-level atomic system by means of a radio frequency (rf) or microwave field driving a hyperfine transition within the ground state. It is shown that a few interesting phenomena such as spectral-line narrowing, spectral-line enhancement, spectral-line suppression, and spontaneous emission quenching can be realized by modulating the frequency and intensity of the rf-driving field in our system. In the dressed-state picture of the coupling and rf-driving fields, we find that this coherently driven atomic system has three close-lying levels so that multiple spontaneously generated coherence (SGC) arises. Our considered atomic model can be found in real atoms, such as rubidium or sodium, so a corresponding experiment can be done to observe the expected phenomena related to SGC reported by Fountoulakis et al. [Phys. Rev. A 73, 033811 (2006)], since no rigorous conditions are required

Density Functional Theory Study on Defect Feature of AsGaGaAs in Gallium Arsenide

Directory of Open Access Journals (Sweden)

Deming Ma

2015-01-01

Full Text Available We investigate the defect feature of AsGaGaAs defect in gallium arsenide clusters in detail by using first-principles calculations based on the density functional theory (DFT. Our calculations reveal that the lowest donor level of AsGaGaAs defect on the gallium arsenide crystal surface is 0.85 eV below the conduction band minimum, while the lowest donor level of the AsGaGaAs defect inside the gallium arsenide bulk is 0.83 eV below the bottom of the conduction band, consistent with gallium arsenide EL2 defect level of experimental value (Ec-0.82 eV. This suggests that AsGaGaAs defect is one of the possible gallium arsenide EL2 deep-level defects. Moreover, our results also indicate that the formation energies of internal AsGaGaAs and surface AsGaGaAs defects are predicted to be around 2.36 eV and 5.54 eV, respectively. This implies that formation of AsGaGaAs defect within the crystal is easier than that of surface. Our results offer assistance in discussing the structure of gallium arsenide deep-level defect and its effect on the material.

Statistical studies of vertical and horizontal earthquake spectra

Energy Technology Data Exchange (ETDEWEB)

Hall, W.J.; Mohraz, B.; Newmark, N.M.

1976-01-01

The study reveals that there is no well-defined dependence of normalized seismic design response spectra on the earthquake ground acceleration level. Recommendations for horizontal design response spectra are close to those given in Regulatory Guide 1.60. Recommendations for vertical response spectra are somewhat lower than Regulatory Guide 1.60 provisions in the frequency range 2 to 30 Hz aproximately. The results are based on seismic information recorded along the west coast of the United States and are directly applicable to that region only.

Interaction of alpha radiation with thermally-induced defects in silicon

International Nuclear Information System (INIS)

Ali, Akbar; Majid, Abdul

2008-01-01

The interaction of radiation-induced defects created by energetic alpha particles and thermally-induced defects in silicon has been studied using a Deep Level Transient Spectroscopy (DLTS) technique. Two thermally-induced defects at energy positions E c -0.48 eV and E c -0.25 eV and three radiation-induced defects E2, E3 and E5 have been observed. The concentration of both of the thermally-induced defects has been observed to increase on irradiation. It has been noted that production rates of the radiation-induced defects are suppressed in the presence of thermally-induced defects. A significant difference in annealing characteristics of thermally-induced defects in the presence of radiation-induced defects has been observed compared to the characteristics measured in pre-irradiated samples

Core-level photoabsorption study of defects and metastable bonding configurations in boron nitride

Energy Technology Data Exchange (ETDEWEB)

Jimenez, I.; Jankowski, A.F.; Terminello, L.J. [Lawrence Berkeley National Lab., CA (United States)] [and others

1997-04-01

Boron nitride is an interesting material for technological applications and for fundamental solid state physics investigations. It is a compound isoelectronic with carbon and, like carbon can possess sp{sup 2} and sp{sup 3} bonded phases resembling graphite and diamond. BN crystallizes in the sp{sup 2}-bonded hexagonal (h-BN), rhombohedral (r-BN) and turbostratic phases, and in the sp{sup 3}-bonded cubic (c-BN) and wurtzite (w-BN) phases. A new family of materials is obtained when replacing C-C pairs in graphite with isoelectronic B-N pairs, resulting in C{sub 2}BN compounds. Regarding other boron compounds, BN is exceptional in the sense that it has standard two-center bonds with conventional coordination numbers, while other boron compounds (e.g. B{sub 4}C) are based on the boron icosahedron unit with three-center bonds and high coordination numbers. The existence of several allotropic forms and fullerene-like structures for BN suggests a rich variety of local bonding and poses the questions of how this affects the local electronic structure and how the material accommodates the stress induced in the transition regions between different phases. One would expect point defects to play a crucial role in stress accommodation, but these must also have a strong influence in the electronic structure, since the B-N bond is polar and a point defect will thus be a charged structure. The study of point defects in relationship to the electronic structure is of fundamental interest in these materials. Recently, the authors have shown that Near-Edge X-ray Absorption Fine Structure (NEXAFS) is sensitive to point defects in h-BN, and to the formation of metastable phases even in amorphous materials. This is significant since other phase identification techniques like vibrational spectroscopies or x-ray diffraction yield ambiguous results for nanocrystalline and amorphous samples. Serendipitously, NEXAFS also combines chemical selectivity with point defect sensitivity.

Variation in the defect structure of p-CdTe single crystals at the passage of the laser shock wave

International Nuclear Information System (INIS)

Baidullaeva, A.; Vlasenko, A.I.; Gorkovenko, B.L.; Lomovtsev, A.V.; Mozol', P.E.

2000-01-01

Variations in the minority-carrier lifetime, photoluminescence spectra, dark current and photocurrent temperature dependences of high-resistivity p-CdTe crystals under the action of the laser shock wave are investigated. It is shown that the variations in the aforementioned characteristics during the passage of the shock wave are defined by the generation of the nonequilibrium carriers from deep centers, and, after that, the variations are defined by the formation of intrinsic defects and their subsequent interaction with the defects existing in the initial crystals

The role of surface and deep-level defects on the emission of tin oxide quantum dots

International Nuclear Information System (INIS)

Kumar, Vinod; Kumar, Vijay; Som, S; Ntwaeaborwa, O M; Swart, H C; Neethling, J H; Lee, Mike

2014-01-01

This paper reports on the role of surface and deep-level defects on the blue emission of tin oxide quantum dots (SnO 2 QDs) synthesized by the solution-combustion method at different combustion temperatures. X-ray diffraction studies showed the formation of a single rutile SnO 2 phase with a tetragonal lattice structure. High resolution transmission electron microscopy studies revealed an increase in the average dot size from 2.2 to 3.6 nm with an increase of the combustion temperature from 350 to 550 °C. A decrease in the band gap value from 3.37 to 2.76 eV was observed with the increase in dot size due to the quantum confinement effect. The photoluminescence emission was measured for excitation at 325 nm and it showed a broad blue emission band for all the combustion temperatures studied. This was due to the creation of various oxygen and tin vacancies/defects as confirmed by x-ray photoelectron spectroscopy data. The origin of the blue emission in the SnO 2 QDs is discussed with the help of an energy band diagram. (paper)

Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

Science.gov (United States)

Golovynskyi, S.; Datsenko, O.; Seravalli, L.; Kozak, O.; Trevisi, G.; Frigeri, P.; Babichuk, I. S.; Golovynska, I.; Qu, Junle

2017-12-01

Deep levels in metamorphic InAs/In x Ga1-x As quantum dot (QD) structures are studied with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and photoluminescence (PL) spectroscopy and compared with data from pseudomorphic InGaAs/GaAs QDs investigated previously by the same techniques. We have found that for a low content of indium (x = 0.15) the trap density in the plane of self-assembled QDs is comparable or less than the one for InGaAs/GaAs QDs. However, the trap density increases with x, resulting in a rise of the defect photoresponse in PC and TSC spectra as well as a reduction of the QD PL intensity. The activation energies of the deep levels and some traps correspond to known defect complexes EL2, EL6, EL7, EL9, and EL10 inherent in GaAs, and three traps are attributed to the extended defects, located in InGaAs embedding layers. The rest of them have been found as concentrated mainly close to QDs, as their density in the deeper InGaAs buffers is much lower. This an important result for the development of light-emitting and light-sensitive devices based on metamorphic InAs QDs, as it is a strong indication that the defect density is not higher than in pseudomorphic InAs QDs.

Defect phase diagram for doping of Ga2O3

Directory of Open Access Journals (Sweden)

Stephan Lany

2018-04-01

Full Text Available For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn, a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T, O partial pressures (pO2, and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO2 conditions. Considering further the stability constraints due to sublimation of molecular Ga2O, specific predictions of optimized pO2 and Si dopant concentrations are given. The incomplete passivation of dopant-defect complexes in β-Ga2O3 suggests a design rule for metastable doping above the solubility limit.

Defect formation in heavily doped Si upon irradiation

International Nuclear Information System (INIS)

Gubskaya, V.I.; Kuchinskii, P.V.; Lomako, V.M.

1981-01-01

The rates of the carrier removal and radiation defect introduction into n- and p-Si in the concentration range of 10 14 to 10 17 cm -3 upon 7-MeV-electron irradiation have been studied. The spectrum of the vacancy-type defects, defining the carrier removal rate in lightly doped crystals has been found. With doping level increase the carrier removal rate grows irrespective of conductivity type, and at n 0 , p 0 > 10 17 cm -3 is close to the total displacement number. At the same time a decrease in the introduction rate of the known vacancy-type defects is observed. x It is shown that a considerable growth of the carrier removal rate is defined neither by introduction of shallow compensating centers, nor by change in the primary defect charge state. It is suggested that at high doping impurity concentrations compensation in Si is due to the introduction of complexes doping impurity-interstitial or (impurity atom-interstitial) + vacancy, which give deep levels. (author)

Electrically active defects in p-type silicon after alpha-particle irradiation

Science.gov (United States)

Danga, Helga T.; Auret, F. Danie; Tunhuma, Shandirai M.; Omotoso, Ezekiel; Igumbor, Emmanuel; Meyer, Walter E.

2018-04-01

In this work, we investigated the defects introduced when boron (B) doped silicon (Si) was irradiated by making use of a 5.4 MeV americium (Am) 241 foil radioactive source with a fluence rate of 7×106 cm-2 s-1 at room temperature. Deep level transient spectroscopy (DLTS) and Laplace-DLTS measurements were used to investigate the electronic properties of the introduced defects. After exposure at a fluence of 5.1×1010 cm-2, the energy levels of the hole traps measured were: H(0.10), H(0.16), H(0.33) and H(0.52) The defect level H(0.10) was tri-vacancy related. H(0.33) was identified as the interstitial carbon (Ci) related defect which was a result of radiation induced damage. H(0.52) was a B-related defect. Explicit deductions about the origin of H(0.16) have not yet been achieved.

Temperature dependence of the defect luminescence in La2Be2O5 single crystals

International Nuclear Information System (INIS)

Ogorodnikov, I.N.; Pustovarov, V.A.

2015-01-01

Temperature quenching (TQ) curves in the temperature range of 80–500 K have been studied for both the undoped, and doped with RE 3+ -ions (RE = Ce, Eu, Er, Pr, Nd) lanthanum beryllate (BLO) single crystals. Photoluminescence spectra and TQ-curves were recorded upon excitation in the absorption bands of the lattice defects. The reaction rate model has been developed to describe the experimental results. The model includes two competing processes with characteristic temperatures: thermal quenching of intracenter PL (T 1 ) and thermally stimulated migration of electronic excitations (T 2 ). The competition between these two processes leads to the observed non-monotonic TQ-curves. The rationalized formulas using three parameters (intensity, activation energy, characteristic temperature), were developed to describe each of these processes. Within the framework of the unified model, all the experimental results were described and the best fit parameters were obtained. Classification of the investigated lanthanum beryllate crystals was carried out in line with the best fit parameters obtained for the TQ-curves. - Highlights: • We studied La 2 Be 2 O 5 (BLO) single crystals (pristine and RE 3+ -doped). • We studied PL emission spectra of defects in BLO and BLO:RE 3+ . • Temperature quenching of the defect PL emission was studied at 80–500 K. • We developed the reaction rate model to describe non-monotonic TQ-curves. • TQ-curves were parameterized for BLO, BLO:RE 3+ (RE = Ce, Pr, Eu, Nd, Er).

Understanding lattice defects to influence ferromagnetic order of ZnO nanoparticles by Ni, Cu, Ce ions

Energy Technology Data Exchange (ETDEWEB)

Verma, Kuldeep Chand, E-mail: dkuldeep.physics@gmail.com [Department of Physics, Panjab University, Chandigarh 160014 (India); Kotnala, R.K., E-mail: rkkotnala@gmail.com [CSIR-National Physical Laboratory, New Delhi 110012 (India)

2017-02-15

Future spintronics technologies based on diluted magnetic semiconductors (DMS) will rely heavily on a sound understanding of the microscopic origins of ferromagnetism in such materials. It remains unclear, however, whether the ferromagnetism in DMS is intrinsic - a precondition for spintronics - or due to dopant clustering. For this, we include a simultaneous doping from transition metal (Ni, Cu) and rare earth (Ce) ions in ZnO nanoparticles that increase the antiferromagnetic ordering to achieve high-T{sub c} ferromagnetism. Rietveld refinement of XRD patterns indicate that the dopant ions in ZnO had a wurtzite structure and the dopants, Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions, are highly influenced the lattice constants to induce lattice defects. The Ni, Cu, Ce ions in ZnO have nanoparticles formation than nanorods was observed in pure sample. FTIR involve some organic groups to induce lattice defects and the metal-oxygen bonding of Zn, Ni, Cu, Ce and O atoms to confirm wurtzite structure. Raman analysis evaluates the crystalline quality, structural disorder and defects in ZnO lattice with doping. Photoluminescence spectra have strong near-band-edge emission and visible emission bands responsible for defects due to oxygen vacancies. The energy band gap is calculated using Tauc relation. Room temperature ferromagnetism has been described due to bound magnetic polarons formation with Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions in ZnO via oxygen vacancies. The zero field and field cooling SQUID measurement confirm the strength of antiferromagnetism in ZnO. The field cooling magnetization is studied by Curie-Weiss law that include antiferromagnetic interactions up to low temperature. The XPS spectra have involve +3/+4 oxidation states of Ce ions to influence the observed ferromagnetism. - Graphical abstract: The lattice defects/vacancies attributed by Ni and Ce ions in the wurtzite ZnO structure are responsible in high T{sub c} -ferromagnetism due to long-range magnetic

Automated defect spatial signature analysis for semiconductor manufacturing process

Science.gov (United States)

Tobin, Jr., Kenneth W.; Gleason, Shaun S.; Karnowski, Thomas P.; Sari-Sarraf, Hamed

1999-01-01

An apparatus and method for performing automated defect spatial signature alysis on a data set representing defect coordinates and wafer processing information includes categorizing data from the data set into a plurality of high level categories, classifying the categorized data contained in each high level category into user-labeled signature events, and correlating the categorized, classified signature events to a present or incipient anomalous process condition.

Mid-IR spectra of different conformers of phenylalanine in the gas phase

NARCIS (Netherlands)

von Helden, G.; Compagnon, I.; Blom, M. N.; Frankowski, M.; Erlekam, U.; Oomens, J.; Brauer, B.; Gerber, R. B.; Meijer, G.

2008-01-01

The experimental mid- and far-IR spectra of six conformers of phenylalanine in the gas phase are presented. The experimental spectra are compared to spectra calculated at the B3LYP and at the MP2 level. The differences between B3LYP and MP2 IR spectra are found to be small. The agreement between

Interplay of intra-atomic and interatomic effects: An investigation of the 2p core level spectra of atomic Fe and molecular FeCl2

International Nuclear Information System (INIS)

Richter, T.; Wolff, T.; Zimmermann, P.; Godehusen, K.; Martins, M.

2004-01-01

The 2p photoabsorption and photoelectron spectra of atomic Fe and molecular FeCl 2 were studied by photoion and photoelectron spectroscopy using monochromatized synchrotron radiation and atomic or molecular beam technique. The atomic spectra were analyzed with configuration interaction calculations yielding excellent agreement between experiment and theory. For the analysis of the molecular photoelectron spectrum which shows pronounced interatomic effects, a charge transfer model was used, introducing an additional 3d 7 configuration. The resulting good agreement between the experimental and theoretical spectrum and the remarkable similarity of the molecular with the corresponding spectrum in the solid phase opens a way to a better understanding of the interplay of the interatomic and intra-atomic interactions in the 2p core level spectra of the 3d metal compounds

Specific absorption spectra of hemoglobin at different PO2 levels: potential noninvasive method to detect PO2 in tissues.

Science.gov (United States)

Liu, Peipei; Zhu, Zhirong; Zeng, Changchun; Nie, Guang

2012-12-01

Hemoglobin (Hb), as one of main components of blood, has a unique quaternary structure. Its release of oxygen is controlled by oxygen partial pressure (PO2). We investigate the specific spectroscopic changes in Hb under different PO2 levels to optimize clinical methods of measuring tissue PO2. The transmissivity of Hb under different PO2 levels is measured with a UV/Vis fiber optic spectrometer. Its plotted absorption spectral curve shows two high absorption peaks at 540 and 576 nm and an absorption valley at 560 nm when PO2 is higher than 100 mm Hg. The two high absorption peaks decrease gradually with a decrease in PO2, whereas the absorption valley at 560 nm increases. When PO2 decreases to approximately 0 mm Hg, the two high absorption peaks disappear completely, while the absorption valley has a hypochromic shift (8 to 10 nm) and forms a specific high absorption peak at approximately 550 nm. The same phenomena can be observed in visible reflectance spectra of finger-tip microcirculation. Specific changes in extinction coefficient and absorption spectra of Hb occur along with variations in PO2, which could be used to explain pathological changes caused by tissue hypoxia and for early detection of oxygen deficiency diseases in clinical monitoring.

Inelastic neutron spectra and cross sections for 238 U

International Nuclear Information System (INIS)

Kornilov, N.V.; Kagalenko, A.V.

1994-01-01

The report discusses the experimental facilities of IPPE, results of spectra and cross sections investigations. The problems of existing data libraries were highlighted. Some of these problems for example, inelastic spectra at high energy may be solved by correct theoretical calculation. Others like level cross sections at E > 2 MeV and the possible structure of excitation function for group levels between 0.5 to 0.85 MeV demand new experimental efforts. 21 refs., 11 figs., 5 tabs

Deep levels in p-type InGaAsN lattice matched to GaAs

International Nuclear Information System (INIS)

Kwon, D.; Kaplar, R.J.; Ringel, S.A.; Allerman, A.A.; Kurtz, S.R.; Jones, E.D.

1999-01-01

Deep-level transient spectroscopy measurements were utilized to investigate deep-level defects in metal - organic chemical vapor deposition-grown, unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the band gap, with a dominant hole trap at E v +0.10eV. Postgrowth annealing simplified the deep-level spectra, enabling the identification of three distinct hole traps at 0.10, 0.23, and 0.48 eV above the valence-band edge, with concentrations of 3.5x10 14 , 3.8x10 14 , and 8.2x10 14 cm -3 , respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4x10 14 cm -3 in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority-carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future. copyright 1999 American Institute of Physics

Structure and flux pinning properties of irradiation defects in YBa2Cu3O7-x

International Nuclear Information System (INIS)

Kirk, M.A.

1992-06-01

We review our investigations of defects produced in YBa 2 Cu 3 O 7-x by various forms of irradiation. The defect microstructure has been studied by transmission electron microscopy (TEM). Irradiation enhancements of flux pinning have been studied by SQUID magnetometry on single crystals. In many cases the same single crystals were used in both TEM and SQUID investigations. The primary atom recoil spectra for all the irradiations studied have been carefully calculated and used to correlate the TEM and magnetization results for the different types of irradiation. Correlation of annealing experiments, employing both TEM and SQUID measurements, among several types of irradiation has also yielded information on the different defect structures present. Defect densities, sizes and strain field anisotropies have been determined by TEM. Defect flux pinning anisotropies have been determined for two field orientations in twinned single crystals. The temperature dependences of the flux pinning have been measured. The maximum field of irreversibility at 70 K is shown to change markedly upon both neutron and proton irradiations in some crystals and not others. The defect structure, chemistry and location in the unit cell has been determined in some cases. Some interaction with existing defect structure has been observed in proton and electron irradiations. The damage character and directionality has been determined in GeV ion irradiated crystals

Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy.

Science.gov (United States)

Vu, Thi Kim Oanh; Lee, Kyoung Su; Lee, Sang Jun; Kim, Eun Kyu

2018-09-01

We studied defect states in In0.53Ga0.47As/InP heterojunctions with interface control by group V atoms during metalorganic chemical vapor (MOCVD) deposition. From deep level transient spectroscopy (DLTS) measurements, two defects with activation energies of 0.28 eV (E1) and 0.15 eV (E2) below the conduction band edge, were observed. The defect density of E1 for In0.53Ga0.47As/InP heterojunctions with an addition of As and P atoms was about 1.5 times higher than that of the heterojunction added P atom only. From the temperature dependence of current- voltage characteristics, the thermal activation energies of In0.53Ga0.47As/InP of heterojunctions were estimated to be 0.27 and 0.25 eV, respectively. It appeared that the reverse light current for In0.53Ga0.47As/InP heterojunction added P atom increased only by illumination of a 940 nm-LED light source. These results imply that only the P addition at the interface can enhance the quality of InGaAs/InP heterojunction.

Biological Action Spectra (invited paper)

Energy Technology Data Exchange (ETDEWEB)

Gruijl, F.R. de

2000-07-01

Ultraviolet (UV) radiation induces a wide variety of biological responses: ranging in humans from well-known short-term effects like sunburn to long-term effects like skin cancer. The wavelength dependencies ('action spectra') of the responses can differ significantly, depending on the UV-targeted molecules (their absorption spectra), their localisation (transmission to the target depth) and the photochemical reactions involved (e.g. quantum yields, competing reaction). An action spectrum (e.g. of sunburn) is usually determined in a wavelength by wavelength analysis of the response. This is not always possible (e.g. in case of skin cancer), and an action spectrum may then be extracted mathematically from differences in responses to broadband UV sources of various spectral compositions (yielding 'biological spectral weights'). However, relative spectral weights may shift with exposure levels and contributions from different wavelengths may not always add up. Under these circumstances conventional analyses will yield different action spectra for different experimental conditions. (author)

Biological Action Spectra (invited paper)

International Nuclear Information System (INIS)

Gruijl, F.R. de

2000-01-01

Ultraviolet (UV) radiation induces a wide variety of biological responses: ranging in humans from well-known short-term effects like sunburn to long-term effects like skin cancer. The wavelength dependencies ('action spectra') of the responses can differ significantly, depending on the UV-targeted molecules (their absorption spectra), their localisation (transmission to the target depth) and the photochemical reactions involved (e.g. quantum yields, competing reaction). An action spectrum (e.g. of sunburn) is usually determined in a wavelength by wavelength analysis of the response. This is not always possible (e.g. in case of skin cancer), and an action spectrum may then be extracted mathematically from differences in responses to broadband UV sources of various spectral compositions (yielding 'biological spectral weights'). However, relative spectral weights may shift with exposure levels and contributions from different wavelengths may not always add up. Under these circumstances conventional analyses will yield different action spectra for different experimental conditions. (author)

Artificial intelligence analysis of paraspinal power spectra.

Science.gov (United States)

Oliver, C W; Atsma, W J

1996-10-01

OBJECTIVE: As an aid to discrimination of sufferers with back pain an artificial intelligence neural network was constructed to differentiate paraspinal power spectra. DESIGN: Clinical investigation using surface electromyography. METHOD: The surface electromyogram power spectra from 60 subjects, 33 non-back-pain sufferers and 27 chronic back pain sufferers were used to construct a back propagation neural network that was then tested. Subjects were placed on a test frame in 30 degrees of lumbar forward flexion. An isometric load of two-thirds maximum voluntary contraction was held constant for 30 s whilst surface electromyograms were recorded at the level of the L(4-5). Paraspinal power spectra were calculated and loaded into the input layer of a three-layer back propagation network. The neural network classified the spectra into normal or back pain type. RESULTS: The back propagation neural was shown to have satisfactory convergence with a specificity of 79% and a sensitivity of 80%. CONCLUSIONS: Artificial intelligence neural networks appear to be a useful method of differentiating paraspinal power spectra in back-pain sufferers.

Ferromagnetically coupled local moments along an extended line defect in graphene

Science.gov (United States)

White, Carter T.; Vasudevan, Smitha; Gunlycke, Daniel

2011-03-01

Recently an extended line defect was observed composed of octagonal and pentagonal carbon rings embedded in a graphene sheet [Nat. Nanotech. 5, 326 (2010)]. We report results of studies we have made of this defect using both first-principles and semi-empirical methods. Two types of boundary-localized states arising from the defect are identified. The first (second) type has eigenstates with wavefunctions that are anti- symmetric (symmetric) with respect to a mirror plane that is perpendicular to the graphene sheet and passes through the line defect center line. The boundary-localized anti-symmetric states are shown to be intimately connected to the zigzag edge states of semi-infinite graphene. They exhibit little dispersion along the defect line and lie close to the Fermi level giving rise to a spontaneous spin polarization along the defect once electron-electron interactions are included at the level of a mean field approximation to a Hubbard Model. Within this approach, symmetry requires that the principal moments couple ferromagnetically both along and across the line defect leading to approximately 2/3 more up than down spin electrons per defect repeat unit. This work was supported by ONR, directly and through NRL.

Electronic structure of defects in semiconductor heterojunctions

International Nuclear Information System (INIS)

Haussy, Bernard; Ganghoffer, Jean Francois

2002-01-01

Full text.heterojunctions and semiconductors and superlattices are well known and well used by people interested in optoelectronics communications. Components based on the use of heterojunctions are interesting for confinement of light and increase of quantum efficiency. An heterojunction is the contact zone between two different semiconductors, for example GaAs and Ga 1-x Al x As. Superlattices are a succession of heterojunctions (up to 10 or 20). These systems have been the subjects of many experiments ao analyse the contact between semiconductors. They also have been theoretically studied by different types of approach. The main result of those studies is the prediciton of band discontinuities. Defects in heterojunctions are real traps for charge carriers; they can affect the efficiency of the component decreasing the currents and the fluxes in it. the knowledge of their electronic structure is important, a great density of defects deeply modifies the electronic structure of the whole material creating real new bands of energy in the band structure of the component. in the first part of this work, we will describe the heterostructure and the defect in terms of quantum wells and discrete levels. This approach allows us to show the role of the width of the quantum well describing the structure but induces specific behaviours due to the one dimensional modelling. Then a perturbative treatment is proposed using the Green's functions formalism. We build atomic chains with different types of atoms featuring the heterostructure and the defect. Densities of states of a structure with a defect and levels associated to the defect are obtained. Results are comparable with the free electrons work, but the modelling do not induce problems due to a one dimensional approach. To extend our modelling, a three dimensions approach, based on a cavity model, is investigated. The influence of the defect, - of hydrogenoid type - introduced in the structure, is described by a cavity

Defects improved photocatalytic ability of TiO2

International Nuclear Information System (INIS)

Li, Lei; Tian, Hong-Wei; Meng, Fan-Ling; Hu, Xiao-Ying; Zheng, Wei-Tao; Sun, Chang Q.

2014-01-01

Highlights: • Defect improves the photocatalytic ability by band gap narrowing and carrier life prolonging. • Atomic undercoordination shortens the local bonds, entraps, and polarizes electrons. • Polarization lowers the local workfunction and lengthens carrier life. • Entrapment and polarization narrows the band gap tuning the wavelength of absorption. - Abstract: Defect generation forms an important means modulating the photocatalytic ability of TiO 2 with mechanisms that remain yet unclear. Here we show that a spectral distillation clarifies the impact of defect on modulating the band gap, electroaffinity, and work function of the substance. Firstly, by analyzing XPS measurements, we calibrated the 2p 3/2 level of 451.47 eV for an isolated Ti atom and its shifts by 2.14 and 6.94 eV, respectively, upon Ti and TiO 2 bulk formation. Spectral difference between the defected and the un-defected TiO 2 skin revealed then that the 2p 3/2 level shifts further from 6.94 to 9.67 eV due to the defect-induced quantum entrapment. This entrapment is associated with an elevation of the upper edges of both the 2p 3/2 and the conduction band by polarization. The shortening and strengthening of bonds between undercoordinated atoms densify and entrap the core electrons, which in turn polarize the dangling bond electrons of defect atoms. The entrapment and polarization mediate thus the band gap, the electroaffinity, the work function, and the photocatalytic ability of TiO 2

Soil carbon estimation from eucalyptus grandis using canopy spectra

African Journals Online (AJOL)

Mapping soil fertility parameters, such as soil carbon (C), is fundamentally important for forest management and research related to forest growth and climate change. This study seeks to establish the link between Eucalyptus grandis canopy spectra and soil carbon using raw and continuum-removed spectra. Canopy-level ...

Quantum computing with defects

Science.gov (United States)

Varley, Joel

2011-03-01

The development of a quantum computer is contingent upon the identification and design of systems for use as qubits, the basic units of quantum information. One of the most promising candidates consists of a defect in diamond known as the nitrogen-vacancy (NV-1) center, since it is an individually-addressable quantum system that can be initialized, manipulated, and measured with high fidelity at room temperature. While the success of the NV-1 stems from its nature as a localized ``deep-center'' point defect, no systematic effort has been made to identify other defects that might behave in a similar way. We provide guidelines for identifying other defect centers with similar properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate systems. To elucidate these points, we compare electronic structure calculations of the NV-1 center in diamond with those of several deep centers in 4H silicon carbide (SiC). Using hybrid functionals, we report formation energies, configuration-coordinate diagrams, and defect-level diagrams to compare and contrast the properties of these defects. We find that the NC VSi - 1 center in SiC, a structural analog of the NV-1 center in diamond, may be a suitable center with very different optical transition energies. We also discuss how the proposed criteria can be translated into guidelines to discover NV analogs in other tetrahedrally coordinated materials. This work was performed in collaboration with J. R. Weber, W. F. Koehl, B. B. Buckley, A. Janotti, C. G. Van de Walle, and D. D. Awschalom. This work was supported by ARO, AFOSR, and NSF.

The new NIST atomic spectra database

International Nuclear Information System (INIS)

Kelleher, D.E.; Martin, W.C.; Wiese, W.L.; Sugar, J.; Fuhr, J.R.; Olsen, K.; Musgrove, A.; Mohr, P.J.; Reader, J.; Dalton, G.R.

1999-01-01

The new atomic spectra database (ASD), Version 2.0, of the National Institute of Standards and Technology (NIST) contains significantly more data and covers a wider range of atomic and ionic transitions and energy levels than earlier versions. All data are integrated. It also has a new user interface and search engine. ASD contains spectral reference data which have been critically evaluated and compiled by NIST. Version 2.0 contains data on 900 spectra, with about 70000 energy levels and 91000 lines ranging from about 1 Aangstroem to 200 micrometers, roughly half of which have transition probabilities with estimated uncertainties. References to the NIST compilations and original data sources are listed in the ASD bibliography. A detailed ''Help'' file serves as a user's manual, and full search and filter capabilities are provided. (orig.)

Defect characterization in high-purity silicon after γ- and hadron irradiation

International Nuclear Information System (INIS)

Stahl, J.

2004-07-01

The challenge for silicon particle detectors in future high energy physics experiments caused by extreme radiation fields can only be met by an appropriate defect engineering of the starting material. Appreciable improvements had already been obtained by enriching high resistivity float zone silicon with oxygen as demonstrated by the CERN RD48 collaboration. This thesis will focus on the difference observed after irradiation between standard and oxygenated float zone and detector grade Czochralski silicon. Results obtained with diodes manufactured on epitaxial layers are also included, envisioning effects arising from the possible migration of impurities during the crystal growth from the oxygen rich Czochralski substrate. Deep level transient spectroscopy (DLTS) and thermally stimulated current (TSC) measurements have been performed for defect characterization after γ- and hadron irradiation. Also a new high resolution DLTS technique has been used for the first time to separate defect levels with similar parameters. During the microscopic studies additionally to the well known defects like VO i , V 2 , C i O i or VP, four new radiation induced defects have been discovered and characterized. Two of these defects are closely correlated with the detector performance: A deep acceptor labeled as I-defect, and a bistable donor (BD). The formation of the I-defect is strongly suppressed in oxygen rich materials, while the formation of the BD is suppressed in oxygen lean material. With their properties the I- and the BD-defect are able to explain the different macroscopic behavior of standard and oxygen enriched float zone silicon after γ-irradiation. Furthermore, the BD defect is most probably responsible for the observation that in Cz and Epi diodes space charge sign inversion does not occur even after high fluences of proton irradiation. Additionally the γ-irradiated diodes were annealed at temperatures between 100 C and 350 C. During these studies some new reaction

Defect properties of Sn- and Ge-doped ZnTe: suitability for intermediate-band solar cells

Science.gov (United States)

Flores, Mauricio A.

2018-01-01

We investigate the electronic structure and defect properties of Sn- and Ge- doped ZnTe by first-principles calculations within the DFT+GW formalism. We find that ({{{Sn}}}{{Zn}}) and ({{{Ge}}}{{Zn}}) introduce isolated energy levels deep in the band gap of ZnTe, derived from Sn-5s and Ge-4s states, respectively. Moreover, the incorporation of Sn and Ge on the Zn site is favored in p-type ZnTe, in both Zn-rich and Te-rich environments. The optical absorption spectra obtained by solving the Bethe-Salpeter equation reveals that sub-bandgap absorptance is greatly enhanced due to the formation of the intermediate band. Our results suggest that Sn- and Ge-doped ZnTe would be a suitable material for the development of intermediate-band solar cells, which have the potential to achieve efficiencies beyond the single-junction limit.

Ultrasensitive ppb-level NO2 gas sensor based on WO3 hollow nanosphers doped with Fe

Science.gov (United States)

Zhang, Ziyue; haq, Mahmood; Wen, Zhen; Ye, Zhizhen; Zhu, Liping

2018-03-01

WO3 mesoporous hollow nanospheres doped with Fe synthesized by a facile method have mesoporous hollow nanospherical like morphology, small grain size (10 nm), high crystalline quality and ultrahigh surface area (165 m2/g). XRD spectra and Raman spectra indicate the Fe doping leading to the smaller cell parameters as compared to pure WO3, and the slight distortion in the crystal lattice produces a number of defects, making it a better candidate for gas sensing. XPS analysis shows that Fe-doped WO3 mesoporous hollow nanospheres have more oxygen vacancies than pure WO3, which is beneficial to the adsorption of oxygen and NO2 and its surface reaction. The gas sensor based on Fe-WO3 exhibited excellent low ppb-level (10 ppb) NO2 detecting performance and outstanding selectivity.

Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa.

1994-01-01

Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author)

Defects in heavily phosphorus-doped Si epitaxial films probed by monoenergetic positron beams

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Suzuki, Ryoichi; Ohgaki, Hideaki; Mikado, Tomohisa

1994-11-01

Vacancy-type defects in heavily phosphorus-doped Si epitaxial films were probed by monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for the epitaxial films grown on the Si substrates by plasma chemical vapor deposition. For the as-deposited film, divacancy-phosphorus complexes were found with high concentration. After 600degC annealing, vacancy clusters were formed near the Si/Si interface, while no drastic change in the depth distribution of the divacancy-phosphorus complexes was observed. By 900degC annealing, the vacancy clusters were annealed out; however, the average number of phosphorus atoms coupled with divacancies increased. The relationship between the vacancy-type defects probed by the positron annihilation technique and the carrier concentration was confirmed. (author).

Defects in TiN and HfN studied by helium thermal desorption spectrometry

International Nuclear Information System (INIS)

Hoondert, W.H.B.; Thijsse, B.J.; Beuckel, A. van den

1994-01-01

Point defects in sub-stoichiometric TiN 1-x and HfN 1-x were investigated by helium thermal desorption spectrometry (300-1800K) following He + ion implantation at energies up to 3000eV. It was found that the low energy spectra are dominated by helium dissociating from the structural vacancies on the nitrogen sublattice; the activation energy for dissociation is 2.2eV for TiN. Above a few hundred electron volts the ions begin to produce several other types of defects, from which helium dissociates with activation energies in the range 2.6-4.0eV. The identity of these defects is discussed. The results for the two nitrides were similar in many respects. The most significant difference observed is that in TiN low energy He + ions generate damage on the N sublattice of a type that is not observed for HfN. Activation energies for HfN are found to be consistently 0.7eV lower than for TiN. ((orig.))

Immobile defects in ferroelastic walls: Wall nucleation at defect sites

Science.gov (United States)

He, X.; Salje, E. K. H.; Ding, X.; Sun, J.

2018-02-01

Randomly distributed, static defects are enriched in ferroelastic domain walls. The relative concentration of defects in walls, Nd, follows a power law distribution as a function of the total defect concentration C: N d ˜ C α with α = 0.4 . The enrichment Nd/C ranges from ˜50 times when C = 10 ppm to ˜3 times when C = 1000 ppm. The resulting enrichment is due to nucleation at defect sites as observed in large scale MD simulations. The dynamics of domain nucleation and switching is dependent on the defect concentration. Their energy distribution follows the power law with exponents during yield between ɛ ˜ 1.82 and 2.0 when the defect concentration increases. The power law exponent is ɛ ≈ 2.7 in the plastic regime, independent of the defect concentration.

Defect-Induced Photoluminescence Enhancement and Corresponding Transport Degradation in Individual Suspended Carbon Nanotubes

Science.gov (United States)

Wang, Bo; Shen, Lang; Yang, Sisi; Chen, Jihan; Echternach, Juliana; Dhall, Rohan; Kang, DaeJin; Cronin, Stephen

2018-05-01

This paper is a contribution to the Physical Review Applied collection in memory of Mildred S. Dresselhaus. The utilization of defects in carbon nanotubes to improve their photoluminescence efficiency has become a widespread study of the realization of efficient light-emitting devices. Here, we report a detailed comparison of the defects in nanotubes (quantified by Raman spectroscopy) and photoluminescence (PL) intensity of individual suspended carbon nanotubes (CNTs). We also evaluate the impact of these defects on the electron or hole transport in the nanotubes, which is crucial for the ultimate realization of optoelectronic devices. We find that brightly luminescent nanotubes exhibit a pronounced D-band in their Raman spectra, and vice versa, dimly luminescent nanotubes exhibit almost no D-band. Here, defects are advantageous for light emission by trapping excitons, which extend their lifetimes. We quantify this behavior by plotting the PL intensity as a function of the ID /IG -band Raman intensity ratio, which exhibits a Lorentzian distribution peaked at ID /IG=0.17 . For CNTs with a ID /IG ratio >0.25 , the PL intensity decreases, indicating that above some critical density, nonradiative recombination at defect sites dominates over the advantages of exciton trapping. In an attempt to fabricate optoelectronic devices based on these brightly luminescent CNTs, we transfer these suspended CNTs to platinum electrodes and find that the brightly photoluminescent nanotubes exhibit nearly infinite resistance due to these defects, while those without bright photoluminescence exhibit finite resistance. These findings indicate a potential limitation in the use of brightly luminescent CNTs for optoelectronic applications.

Intrinsic and extrinsic defects in a family of coal-derived graphene quantum dots

Science.gov (United States)

Singamaneni, Srinivasa Rao; van Tol, Johan; Ye, Ruquan; Tour, James M.

2015-11-01

In this letter, we report on the high frequency (239.2 and 336 GHz) electron spin resonance (ESR) studies performed on graphene quantum dots (GQDs), prepared through a wet chemistry route from three types of coal: (a) bituminous, (b) anthracite, and (c) coke; and from non-coal derived GQDs. The microwave frequency-, power-, and temperature-dependent ESR spectra coupled with computer-aided simulations reveal four distinct magnetic defect centers. In bituminous- and anthracite-derived GQDs, we have identified two of them as intrinsic carbon-centered magnetic defect centers (a broad signal of peak to peak width = 697 (10-4 T), g = 2.0023; and a narrow signal of peak to peak width = 60 (10-4 T), g = 2.003). The third defect center is Mn2+ (6S5/2, 3d5) (signal width = 61 (10-4 T), g = 2.0023, Aiso = 93(10-4 T)), and the fourth defect is identified as Cu2+ (2D5/2, 3d9) (g⊥ = 2.048 and g‖ = 2.279), previously undetected. Coke-derived and non-coal derived GQDs show Mn2+ and two-carbon related signals, and no Cu2+ signal. The extrinsic impurities most likely originate from the starting coal. Furthermore, Raman, photoluminescence, and ESR measurements detected no noticeable changes in the properties of the bituminous GQDs after one year. This study highlights the importance of employing high frequency ESR spectroscopy in identifying the (magnetic) defects, which are roadblocks for spin relaxation times of graphene-based materials. These defects would not have been possible to probe by other spin transport measurements.

A null mutation of Hhex results in abnormal cardiac development, defective vasculogenesis and elevated Vegfa levels.

Science.gov (United States)

Hallaq, Haifa; Pinter, Emese; Enciso, Josephine; McGrath, James; Zeiss, Caroline; Brueckner, Martina; Madri, Joseph; Jacobs, Harris C; Wilson, Christine M; Vasavada, Hemaxi; Jiang, Xiaobing; Bogue, Clifford W

2004-10-01

The homeobox gene Hhex has recently been shown to be essential for normal liver, thyroid and forebrain development. Hhex(-/-) mice die by mid-gestation (E14.5) and the cause of their early demise remains unclear. Because Hhex is expressed in the developing blood islands at E7.0 in the endothelium of the developing vasculature and heart at E9.0-9.5, and in the ventral foregut endoderm at E8.5-9.0, it has been postulated to play a critical role in heart and vascular development. We show here, for the first time, that a null mutation of Hhex results in striking abnormalities of cardiac and vascular development which include: (1) defective vasculogenesis, (2) hypoplasia of the right ventricle, (3) overabundant endocardial cushions accompanied by ventricular septal defects, outflow tract abnormalities and atrio-ventricular (AV) valve dysplasia and (4) aberrant development of the compact myocardium. The dramatic enlargement of the endocardial cushions in the absence of Hhex is due to decreased apoptosis and dysregulated epithelial-mesenchymal transformation (EMT). Interestingly, vascular endothelial growth factor A (Vegfa) levels in the hearts of Hhex(-/-) mice were elevated as much as three-fold between E9.5 and E11.5, and treatment of cultured Hhex(-/-) AV explants with truncated soluble Vegfa receptor 1, sFlt-1, an inhibitor of Vegf signaling, completely abolished the excessive epithelial-mesenchymal transformation seen in the absence of Hhex. Therefore, Hhex expression in the ventral foregut endoderm and/or the endothelium is necessary for normal cardiovascular development in vivo, and one function of Hhex is to repress Vegfa levels during development.

OH-point defects in quartz in B- and Li-bearing systems and their application to pegmatites

Science.gov (United States)

Baron, M. A.; Stalder, R.; Konzett, J.; Hauzenberger, C. A.

2015-01-01

OH incorporation in quartz in Al-, B- and Li-bearing systems (granitic systems containing tourmaline or spodumene) was studied experimentally in order to investigate the effect of pressure, temperature and chemical impurities on the generation of OH-defects. High-pressure experiments were carried out at pressures between 5 and 25 kbar and temperatures between 800 and 900 °C, and OH-contents in quartz were calculated from IR absorption spectra measured on oriented quartz crystals. IR absorption features were assigned to impurity substitutions, such as AlOH (3,420, 3,379 and 3,315 cm-1) and BOH (3,595 cm-1), LiOH (3,483 cm-1), and hydrogarnet substitution (4H)Si defects (3,583 cm-1). Results indicate a negative correlation of incorporated Al-specific OH-defect content versus pressure (630 ± 130 wt ppm H2O at 5 kbar to 102 ± 6 wt ppm H2O at 25 kbar), but no clear correlation of B-specific OH-defects with pressure. In runs initially containing spodumene, virtually OH-free quartzes were observed at pressures ≥10 kbar, where impurity cations compensate each other forming an anhydrous eucryptite-defect component. In contrast, at 5 kbar, both Li- ad Al-specific OH-defects are observed (corresponding to 470 ± 75 wt ppm H2O). Results from this study may therefore be used to monitor formation conditions of quartz in terms of pressure and trace metal saturation of the crystallizing petrological system. IR spectra obtained from natural quartz grains from a tourmaline-bearing pegmatite exhibit B- and Al-related OH-bands. The B-related OH-band is also exhibited in quartz from a tourmaline + spodumene-bearing pegmatite. Li- and Al-related OH-bands, however, are subordinate or not observed at all in the spodumene-bearing system, which suggests that OH-vibrations do not reflect absolute Li-contents in quartz due to efficient coupled substitution involving Al. Data from experimental runs and natural specimens indicate that the B-related OH-band can be used as a rough proxy for

Radiation damage in silicon. Defect analysis and detector properties

Energy Technology Data Exchange (ETDEWEB)

Hoenniger, F.

2008-01-15

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after {gamma}-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO{sub i}, C{sub i}O{sub i}, C{sub i}C{sub s}, VP or V{sub 2} several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO{sub 2} defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep

Radiation damage in silicon. Defect analysis and detector properties

International Nuclear Information System (INIS)

Hoenniger, F.

2008-01-01

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after γ-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO i , C i O i , C i C s , VP or V 2 several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO 2 defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep acceptor, a model has been introduced to

The role of Rydberg and continuum levels in computing high harmonic generation spectra of the hydrogen atom using time-dependent configuration interaction

International Nuclear Information System (INIS)

Luppi, Eleonora; Head-Gordon, Martin

2013-01-01

We study the role of Rydberg bound-states and continuum levels in the field-induced electronic dynamics associated with the High-Harmonic Generation (HHG) spectroscopy of the hydrogen atom. Time-dependent configuration-interaction (TD-CI) is used with very large atomic orbital (AO) expansions (up to L= 4 with sextuple augmentation and off-center functions) to describe the bound Rydberg levels, and some continuum levels. To address the lack of ionization losses in TD-CI with finite AO basis sets, we employed a heuristic lifetime for energy levels above the ionization potential. The heuristic lifetime model is compared against the conventional atomic orbital treatment (infinite lifetimes), and a third approximation which is TD-CI using only the bound levels (continuum lifetimes go to zero). The results suggest that spectra calculated using conventional TD-CI do not converge with increasing AO basis set size, while the zero lifetime and heuristic lifetime models converge to qualitatively similar spectra, with implications for how best to apply bound state electronic structure methods to simulate HHG. The origin of HHG spectral features including the cutoff and extent of interference between peaks is uncovered by separating field-induced coupling between different types of levels (ground state, bound Rydberg levels, and continuum) in the simulated electronic dynamics. Thus the origin of deviations between the predictions of the semi-classical three step model and the full simulation can be associated with particular physical contributions, which helps to explain both the successes and the limitations of the three step model

Electron spin resonance signal from a tetra-interstitial defect in silicon

CERN Document Server

Mchedlidze, T

2003-01-01

The Si-B3 electron spin resonance (ESR) signal from agglomerates of self-interstitials was detected for the first time in hydrogen-doped float-zone-grown silicon samples subjected to annealing after electron irradiation. Previously this signal had been detected only in neutron- or proton-irradiated silicon samples. The absence of obscuring ESR peaks for the investigated samples at applied measurement conditions allowed an investigation of the hyperfine structure of the Si-B3 spectra. The analysis supports assignment of a tetra-interstitial defect as the origin of the signal.

Positron annihilation and electron spin resonance studies of defects in electron-irradiated 3C-SiC

International Nuclear Information System (INIS)

Itoh, Hisayoshi; Yoshikawa, Masahito; Tanigawa, Shoichiro; Nashiyama, Isamu; Misawa, Shunji; Okumura, Hajime; Yoshida, Sadafumi.

1992-01-01

Defects induced by 1 MeV electron-irradiation in cubic silicon carbide (3C-SiC) epitaxially grown by chemical vapor deposition have been studied with positron annihilation and electron spin resonance (ESR). Doppler broadened energy spectra of annihilation γ-rays obtained by using variable-energy positron beams showed the formation of vacancy-type defects in 3C-SiC by the electron-irradiation. An ESR spectrum labeled Tl, which has an isotropic g-value of 2.0029 ± 0.001, was observed in electron-irradiated 3C-SiC. The Tl spectrum is interpreted by hyperfine interactions of paramagnetic electrons with 13 C at four carbon sites and 29 Si at twelve silicon sites, indicating that the Tl center arises from a point defect at a silicon site. Both the results can be accounted for by the introduction of isolated Si vacancies by the irradiation. (author)

Annihilation momentum density of positrons trapped at vacancy-type defects in metals and alloys

International Nuclear Information System (INIS)

Bansil, A.; Prasad, R.; Benedek, R.

1988-01-01

Positron annihilation, especially the angular correlation of annihilation radiation, is a powerful tool for investigating the electronic spectra of ordered as well as defected materials. The tendency of positrons to trap at vacancy-type defects should enable this technique to study the local environment of such defects. However, we need to develop a theoretical basis for calculating the two-photon annihilation momentum density rho/sub 2gamma/(p-vector). We have recently formulated and implemented a theory of rho/sub 2gamma/(p-vector) from vacancy-type defects in metals and alloys. This article gives an outline of our approach together with a few of our results. Section 2 summarizes the basic equations for evaluating rho/sub 2gamma/(p-vector). Our Green's function-based approach is nonperturbative and employs a realistic (one-particle) muffin-tin Hamiltonian for treating electrons and positrons. Section 3 presents and discusses rho/sub 2gamma/(p-vector) results for a mono-vacancy in Cu. We have neglected the effects of electron-positron correlations and of lattice distortion around the vacancy. Section 4 comments briefly on the question of treating defects such as divacancies and metal-impurity complexes in metals and alloys. Finally, in Section 5, we remark on the form of rho/sub 2gamma/(p-vector) for a mono-vacancy in jellium. 2 figs

Investigation of the chemical vicinity of defects in Mg and AZ31 with positron coincident Doppler boarding spectroscopy

International Nuclear Information System (INIS)

Stadlbauer, Martin

2008-01-01

Within the scope of the present work, two main goals have been achieved: Firstly, the coincident Doppler broadening spectrometer (CDBS) at the high intense positron source NEPOMUC has been elaborately improved in order to increase the spatial resolution for defect mapping measurements and to investigate samples with shallow positron trapping sites which are present e. g. in magnesium. Secondly, as an application, the chemical vicinity of defects in the industrially used magnesium based alloy AZ31 has been examined by means of the detailed investigation of ion-irradiated specimen with positron annihilation spectroscopy. Detailed simulations with the finite-element simulation tool COMSOL were used to optimize the focal diameter of the positron beam at the sample position in order to increase the spatial resolution. With a value of 0.3 mm, sub-mm resolution has now been reached. The CDBS has been furthermore equipped with a sample cooling unit in order to reach liquid nitrogen temperature, maintaining the feature of scanning the sample for defect mapping. Defects and their chemical surrounding in ion irradiated magnesium and the magnesium based alloy AZ31 were then investigated on an atomic scale with the CDBS. In the respective spectra the chemical information and the defect contribution have been thoroughly separated. For this purpose, samples of annealed Mg were irradiated with Mg-ions in order to create exclusively defects. In addition Al- and Zn-ion irradiations on Mg-samples were performed in order to create samples with both defects and impurity atoms. The ion irradiated area on the samples was investigated with laterally and depth resolved positron Doppler broadening spectroscopy (DBS) and compared with SRIM-simulations of the vacancy distribution. The investigation of the chemical vicinity of crystal defects in AZ31 was performed with CDBS on Mg-ion irradiated AZ31 with Mg-ion irradiated Mg. The outer tail of the energy distribution in the annihilation

Investigation of the chemical vicinity of defects in Mg and AZ31 with positron coincident Doppler boarding spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Stadlbauer, Martin

2008-03-10

Within the scope of the present work, two main goals have been achieved: Firstly, the coincident Doppler broadening spectrometer (CDBS) at the high intense positron source NEPOMUC has been elaborately improved in order to increase the spatial resolution for defect mapping measurements and to investigate samples with shallow positron trapping sites which are present e. g. in magnesium. Secondly, as an application, the chemical vicinity of defects in the industrially used magnesium based alloy AZ31 has been examined by means of the detailed investigation of ion-irradiated specimen with positron annihilation spectroscopy. Detailed simulations with the finite-element simulation tool COMSOL were used to optimize the focal diameter of the positron beam at the sample position in order to increase the spatial resolution. With a value of 0.3 mm, sub-mm resolution has now been reached. The CDBS has been furthermore equipped with a sample cooling unit in order to reach liquid nitrogen temperature, maintaining the feature of scanning the sample for defect mapping. Defects and their chemical surrounding in ion irradiated magnesium and the magnesium based alloy AZ31 were then investigated on an atomic scale with the CDBS. In the respective spectra the chemical information and the defect contribution have been thoroughly separated. For this purpose, samples of annealed Mg were irradiated with Mg-ions in order to create exclusively defects. In addition Al- and Zn-ion irradiations on Mg-samples were performed in order to create samples with both defects and impurity atoms. The ion irradiated area on the samples was investigated with laterally and depth resolved positron Doppler broadening spectroscopy (DBS) and compared with SRIM-simulations of the vacancy distribution. The investigation of the chemical vicinity of crystal defects in AZ31 was performed with CDBS on Mg-ion irradiated AZ31 with Mg-ion irradiated Mg. The outer tail of the energy distribution in the annihilation

Unusual features of proton and α-spectra from low-energy heavy-ion ...

Indian Academy of Sciences (India)

Home; Journals; Pramana – Journal of Physics; Volume 75; Issue 1. Unusual features ... Keywords. Proton and α-spectra; heavy-ion reaction; broad structures; nuclear level density. ... The broad structures in the -spectra cannot be fully explained within the statistical model even with the enhanced level density. In this case ...

Measurement of the energy stored in alkalihalogenids by radiation defects

International Nuclear Information System (INIS)

Schrey, P.

1976-01-01

The energy stored in alkali-halogen crystals after X-ray irradiation is studied at 11 K. Using a heat flux calorimeter designed especially for this experiment, single crystals are irradiated and the energy release is recorded as the temperature is increased proportional to time from 10 K to 50 K. The energy release spectra are compared with relevant optical measurements and thus a relation between energy release and tempering of point defects is established. The energy release peaks can be assigned definitly to tempering stages of the Frenkel pairs. For explanation a simple model is proposed. (orig./HPOE) [de

Determination of the optical absorption spectra of thin layers from their photoacoustic spectra

Science.gov (United States)

Bychto, Leszek; Maliński, Mirosław; Patryn, Aleksy; Tivanov, Mikhail; Gremenok, Valery

2018-05-01

This paper presents a new method for computations of the optical absorption coefficient spectra from the normalized photoacoustic amplitude spectra of thin semiconductor samples deposited on the optically transparent and thermally thick substrates. This method was tested on CuIn(Te0.7Se0.3)2 thin films. From the normalized photoacoustic amplitude spectra, the optical absorption coefficient spectra were computed with the new formula as also with the numerical iterative method. From these spectra, the value of the energy gap of the thin film material and the type of the optical transitions were determined. From the experimental optical transmission spectra, the optical absorption coefficient spectra were computed too, and compared with the optical absorption coefficient spectra obtained from photoacoustic spectra.

Revisiting the reasons for contact fatigue defects in rails

Directory of Open Access Journals (Sweden)

Darenskiy Alexander

2017-01-01

Full Text Available As it is known rail is one of the most significant elements of the whole railway construction. Operation under alternating loads from wheels of the rolling stock and different ambient temperatures lead to appearance and development of rail defects and damages. A great variety of operational factors (freight traffic density, axial loads, traffic speeds, track layout and profile as well as special features of manufacturing and thermal treatment of rails create certain difficulties while identifying reasons for defects and damages. The article deals with an attempt to estimate influence of track layout and lateral forces on appearance of defects and damages in rails on the base of long-term observations of rail operation in Kharkiv Metro. On the basis of the vehicle/track mathematical model which considers structural features of both rolling stock and permanent way in underground systems, the level of lateral forces in curves was calculated. The coefficients of correlation between the track curvature, the level of forces and the amount of defected rails removed were later obtained, that made it possible to determine the dominant factor which may lead to appearance and development of contact fatigue defects in rails laid in curves.

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Energy Technology Data Exchange (ETDEWEB)

Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

2015-07-28

Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

Response spectra by blind faults for design purpose of stiff structures on rock site

International Nuclear Information System (INIS)

Hiroyuki Mizutani; Kenichi Kato; Masayuki Takemura; Kazuhiko Yashiro; Kazuo Dan

2005-01-01

The goal of this paper is to propose the response spectra by blind faults for seismic design of nuclear power facilities. It is impossible to evaluate earthquake ground motions from blind faults, because the size and the location of blind fault cannot be identified even if the detailed geological surveys are conducted. From the viewpoint of seismic design, it is crucial to investigate the upper level of earthquake ground motions due to blind faults. In this paper, 41 earthquakes that occurred in the upper crust in Japan and California are selected and classified into the active and the blind fault types. On the basis of near-source strong motion records observed on rock sites, upper level of response spectra by blind faults is examined. The estimated upper level is as follows: the peak ground acceleration is 450 cm/s 2 , the flat level of the acceleration response spectra is 1200 cm/s 2 , and the flat level of the velocity response spectra is 100 cm/s on rock sites with shear wave velocity Vs of about 700 m/s. The upper level can envelop the observed response spectra in near-source region on rock sites. (authors)

Interacting two-level defects as sources of fluctuating high-frequency noise in superconducting circuits

Energy Technology Data Exchange (ETDEWEB)

Mueller, Clemens [ARC Centre of Excellence for Engineered Quantum Systems, The University of Queensland, Brisbane (Australia); Lisenfeld, Juergen [Physikalisches Institut, Karlsruhe Institute of Technology, Karlsruhe (Germany); Shnirman, Alexander [Institut fuer Theory der Kondensierten Materie, Karlsruhe Institute of Technology, Karlsruhe (Germany); LD Landau Institute for Theoretical Physics, Moscow (Russian Federation); Poletto, Stefano [IBM TJ Watson Research Centre, Yorktown Heights (United States)

2016-07-01

Since the very first experiments, superconducting circuits have suffered from strong coupling to environmental noise, destroying quantum coherence and degrading performance. In state-of-the-art experiments, it is found that the relaxation time of superconducting qubits fluctuates as a function of time. We present measurements of such fluctuations in a 3D-transmon circuit and develop a qualitative model based on interactions within a bath of background two-level systems (TLS) which emerge from defects in the device material. In our model, the time-dependent noise density acting on the qubit emerges from its near-resonant coupling to high-frequency TLS which experience energy fluctuations due to their interaction with thermally fluctuating TLS at low frequencies. We support the model by providing experimental evidence of such energy fluctuations observed in a single TLS in a phase qubit circuit.

Defects in low temperature electron irradiated InP

International Nuclear Information System (INIS)

Suski, J.; Bourgoin, J.

1984-01-01

n and p-InP has been irradiated at 25K with 1MeV electrons and the created defects were studied by deep level transient spectroscopy (DLTS) in the range 25K-400K. In n-InP, four traps are directly observed, with low introduction rates except for one. They anneal in three stages, and four new centers of still lower concentration appear after 70 0 C heat treatment. In p-InP, two dominant traps stable up to approx.= 400K with introduction rates close to the theoretical ones, which might be primary defects are found, while another one is clearly a secondary defect likely associated to Zn dopant. At least two of the low concentration irradiation induced electron traps, created between 25K and 100K are also secondary defects, which implies a mobility of some primary defects down to 100K at least. (author)

Studies of defects and defect agglomerates by positron annihilation spectroscopy

DEFF Research Database (Denmark)

Eldrup, Morten Mostgaard; Singh, B.N.

1997-01-01

A brief introduction to positron annihilation spectroscopy (PAS), and in particular lo its use for defect studies in metals is given. Positrons injected into a metal may become trapped in defects such as vacancies, vacancy clusters, voids, bubbles and dislocations and subsequently annihilate from...... the trapped state iri the defect. The annihilation characteristics (e.g., the lifetime of the positron) can be measured and provide information about the nature of the defect (e.g., size, density, morphology). The technique is sensitive to both defect size (in the range from monovacancies up to cavities...

Probing molecular chirality by coherent optical absorption spectra

Energy Technology Data Exchange (ETDEWEB)

Jia, W. Z. [Quantum Optoelectronics Laboratory, School of Physics and Technology, Southwest Jiaotong University, Chengdu 610031 (China); Wei, L. F. [Quantum Optoelectronics Laboratory, School of Physics and Technology, Southwest Jiaotong University, Chengdu 610031 (China); State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275 (China)

2011-11-15

We propose an approach to sensitively probe the chirality of molecules by measuring their coherent optical-absorption spectra. It is shown that quantum dynamics of the cyclic three-level chiral molecules driven by appropriately designed external fields is total-phase dependent. This will result in chirality-dependent absorption spectra for the probe field. As a consequence, the charality-dependent information in the spectra (such as the locations and relative heights of the characteristic absorption peaks) can be utilized to identify molecular chirality and determinate enantiomer excess (i.e., the percentages of different enantiomers). The feasibility of the proposal with chiral molecules confined in hollow-core photonic crystal fiber is also discussed.

Defect-driven inhomogeneities in Ni /4H-SiC Schottky barriers

Science.gov (United States)

Tumakha, S.; Ewing, D. J.; Porter, L. M.; Wahab, Q.; Ma, X.; Sudharshan, T. S.; Brillson, L. J.

2005-12-01

Nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) of Ni diode arrays on 4H-SiC epitaxial wafers reveals a striking correspondence between deep level defects and electrical transport measurements on a diode-by-diode basis. Current-voltage measurements display both ideal and nonideal diode characteristics due to multiple barriers within individual contacts. Near-interface DRCLS demonstrates the presence of three discrete midgap defect levels with 2.2, 2.45, and 2.65eV emission energies whose concentrations vary on a submicron scale among and within individual diodes, correlating with barrier inhomogeneity. These results also suggest that SiC native defect levels can account for the maximum range of n-type barrier heights.

Point defect states in Sb-doped germanium

Energy Technology Data Exchange (ETDEWEB)

Patel, Neil S., E-mail: neilp@mit.edu; Monmeyran, Corentin, E-mail: comonmey@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States); Agarwal, Anuradha [Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States); Kimerling, Lionel C. [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States); Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)

2015-10-21

Defect states in n-type Sb-doped germanium were investigated by deep-level transient spectroscopy. Cobalt-60 gamma rays were used to generate isolated vacancies and interstitials which diffuse and react with impurities in the material to form four defect states (E{sub 37}, E{sub 30}, E{sub 22}, and E{sub 21}) in the upper half of the bandgap. Irradiations at 77 K and 300 K as well as isothermal anneals were performed to characterize the relationships between the four observable defects. E{sub 37} is assigned to the Sb donor-vacancy associate (E-center) and is the only vacancy containing defect giving an estimate of 2 × 10{sup 11 }cm{sup −3} Mrad{sup −1} for the uncorrelated vacancy-interstitial pair introduction rate. The remaining three defect states are interstitial associates and transform among one another. Conversion ratios between E{sub 22}, E{sub 21}, and E{sub 30} indicate that E{sub 22} likely contains two interstitials.

Evaluation of defects induced by neutron radiation in reactor pressure vessels steels

International Nuclear Information System (INIS)

Lopez Jimenez, J.

1978-01-01

We have developed a method for calculating the production of neutron induced defects (depleted zone and crowdions) in ferritic pressure vessel steels for different neutron spectra. They have been analysed both the recoil primary atoms produced by elastic and inelastic collisions with fast neutrons and the ones produced by gamma-ray emission by thermal neutron absorption. Theoretical modelling of increasing in the ductile-brittle transition temperature of ferritic steels has been correlated with experimental data at irradiation temperature up to 400 degree centigree (Author) 15 refs

Defect properties of CuCrO2: A density functional theory calculation

International Nuclear Information System (INIS)

Fang Zhi-Jie; Zhu Ji-Zhen; Zhou Jiang; Mo Man

2012-01-01

Using the first-principles methods, we study the formation energetics properties of intrinsic defects, and the charge doping properties of extrinsic defects in transparent conducting oxides CuCrO 2 . Intrinsic defects, some typical acceptor-type, and donor-type extrinsic defects in their relevant charge state are considered. By systematically calculating the formation energies and transition energy, the results of calculation show that, V Cu , O i , and O Cu are the relevant intrinsic defects in CuCrO 2 ; among these intrinsic defects, V Cu is the most efficient acceptor in CuCrO 2 . It is found that all the donor-type extrinsic defects have difficulty in inducing n-conductivity in CuCrO 2 because of their deep transition energy level. For all the acceptor-type extrinsic defects, substituting Mg for Cr is the most prominent doping acceptor with relative shallow transition energy levels in CuCrO 2 . Our calculation results are expected to be a guide for preparing promising n-type and p-type materials in CuCrO 2 . (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Defect modelling

International Nuclear Information System (INIS)

Norgett, M.J.

1980-01-01

Calculations, drawing principally on developments at AERE Harwell, of the relaxation about lattice defects are reviewed with emphasis on the techniques required for such calculations. The principles of defect modelling are outlined and various programs developed for defect simulations are discussed. Particular calculations for metals, ionic crystals and oxides, are considered. (UK)

Point-defect interactions in electron-irradiated titanomagnetites—as analysed by magnetic after-effect spectroscopy on annealing within 80 K

NARCIS (Netherlands)

Walz, F.; Brabers, V.A.M.; Kronmüller, H.

2010-01-01

During high-temperature growing of titanomagnetite single crystals (Fe2.8-¿Ti0.2O4, ¿ <0.005) in oxygen enriched atmospheres, specific Ti4+- and vacancy-based defect configurations are induced, giving rise to magnetic after-effect (MAE) spectra with peaks near 450, 200 and 65 K. The atomistic

Defect reduction of patterned media templates and disks

Science.gov (United States)

Luo, Kang; Ha, Steven; Fretwell, John; Ramos, Rick; Ye, Zhengmao; Schmid, Gerard; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

2010-05-01

Imprint lithography has been shown to be an effective technique for the replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require a demonstration of defect levels commensurate with cost-effective device production. This work summarizes the results of defect inspections of hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical based automated inspection tools. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity and scattered light. Defects that have been identified in this manner are further characterized according to the morphology. The imprint process was tested after optimizing both the disk cleaning and adhesion layers processes that precede imprinting. An extended imprint run was performed and both the defect types and trends are reported.

The X-ray electronic spectra of TiC-NbC solid solution

International Nuclear Information System (INIS)

Cherkashenko, V.M.; Ezhov, A.V.; Nazarova, S.Z.; Kurmaev, Eh.Z.; Nojmann, M.

2001-01-01

X-ray photoelectronic spectra of inner levels and valency lands in TiC-NbC solid solutions were studied. Results of combining TiL α -, NbL β2.15 -, CK α - X-ray emission spectra and photoelectronic spectra of valency bands in one energy scale in reference to the Fermi level were analyzed. It is shown that a change in crystal lattice parameters, as well as charge redistribution between titanium and niobium atoms, produce a strong effect on electronic structure formation in the mixed carbides mentioned [ru

Defect modes caused by twinning in one-dimensional photonic crystals

Czech Academy of Sciences Publication Activity Database

Němec, Hynek; Duvillaret, L.; Quemeneur, F.; Kužel, Petr

2004-01-01

Roč. 21, č. 3 (2004), s. 548-553 ISSN 0740-3224 Institutional research plan: CEZ:AV0Z1010914 Keywords : photonic structures * twin-defect * defect levels * tuning Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.649, year: 2004

Study of magnetic defects in Nb{sub 2}VSbO{sub 10}

Energy Technology Data Exchange (ETDEWEB)

Typek, J., E-mail: typjan@zut.edu.pl [Institute of Physics, West Pomeranian University of Technology, Szczecin, Al. Piastow 48, 70-311 Szczecin (Poland); Cyran, A.; Zolnierkiewicz, G.; Bobrowska, M. [Institute of Physics, West Pomeranian University of Technology, Szczecin, Al. Piastow 48, 70-311 Szczecin (Poland); Filipek, E.; Piz, M. [Department of Inorganic and Analytical Chemistry, West Pomeranian University of Technology, Szczecin, Al. Piastow 42, 71-065 Szczecin (Poland)

2017-02-15

Magnetic properties of Nb{sub 2}VSbO{sub 10}, the compound formed in V–Sb–Nb oxide system, were investigated by dc magnetisation measurements using an MPMS-7 SQUID magnetometer and EPR conventional X–band Bruker E 500 spectrometer. Although the nominal valences of the constituting metal ions indicated a diamagnetic material, Nb{sub 2}VSbO{sub 10} displayed rich and interesting magnetic behaviour due to the existence of numerous defects related to oxygen vacancies. Isothermal magnetisation has revealed the presence of three spin subsystems – two different paramagnetic systems and antiferromagnetic spin clusters. EPR spectra showed the presence of three components, involving isolated and interacting V{sup 4+} ions as well as antiferromagnetic spin clusters. All these magnetic defects are the result of valence changes of metal ions due to charge compensation in the neighborhood of oxygen vacancies, most probably located on grains boundaries.

Lithium compensation of GaAs

International Nuclear Information System (INIS)

Alexiev, D.; Tavendale, A.J.

1988-08-01

Defects generated following Li diffusion into GaAs were studied by optical deep level transient spectroscopy (ODLTS) and deep level transient spectroscopy (DLTS). In an exploratory series of experiments, the effect of Li diffusion on existing trap spectra, defect generation and as a means for the compensation of GaAs was studied. The variables included diffusion temperature, initial trap spectra of GaAs and annealing periods. Detailed measurements of trap energies were made

Growth of defect-free GaAsSbN axial nanowires via self-catalyzed molecular beam epitaxy

Science.gov (United States)

Sharma, Manish; Deshmukh, Prithviraj; Kasanaboina, Pavan; Reynolds, C. Lewis, Jr.; Liu, Yang; Iyer, Shanthi

2017-12-01

Bandgap reduction of 10% by incorporation of a dilute amount of N is reported for the first time, in axial GaAsSb nanowires (NWs) grown on Si (111) via Ga-assisted molecular beam epitaxy. Impact of N incorporation on the surface morphology, NW growth kinetics, and their structural and optical properties were examined. Dilute nitride NWs with Sb composition of 7 at% did not exhibit any noticeable planar defects, as revealed by the absence of satellite twin peaks in the selected-area diffraction pattern and high-resolution transmission electron microscopy imaging. Point defects were also minimal in as-grown dilute nitride NWs, as ascertained from the comparison of low-temperature photoluminescence spectra as well as the shape and shift of Raman modes, with in situ annealed NWs in different ambients. Evidence of enhanced incorporation of N was found in the NWs in situ annealed in N ambient, but with deteriorated optical quality due to simultaneous creation of N-induced defects. The lack of any noticeable defects in the as-grown GaAsSbN NWs demonstrates the advantage of the vapor-liquid-solid mechanism responsible for growth of axial configuration over the vapor-solid growth mechanism for core-shell NWs as well as their thin film counterpart, which commonly exhibit N-induced point defects.

Electron radiation defects in TaCsub(1-x) and TiCsub(0.97)

International Nuclear Information System (INIS)

Morillo, J.; Novion, C.H. de; Dural, J.

1981-08-01

The electrical resistivity changes of TaCsub(0.99) and TaCsub(0.80) have been measured at 21 K during irradiation with electrons of incident energies ranging from 2.5 to 0.25 MeV: a non-zero production rate is observed, even at the lowest energies. The recovery of defects was followed up to 400 K for TaCsub(0.99) and TiCsub(0.97) irradiated with 2.25 MeV electrons and up to 160 K for TaCsub(0.80) irradiated with 0.75 MeV electrons. The results are compared to fast neutron radiation damage data. For TiCsub(0.97) and TaCsub(0.99), the contributions of the different defects to the production rates and recovery spectra are tentatively separated, and a rough estimate of Frenkel pair resistivities is given

Defect properties of ZnO nanopowders and their modifications induced by remote plasma treatments

Energy Technology Data Exchange (ETDEWEB)

Paramo, J A; Peters, R M; Quarles, C A; Strzhemechny, Y M [Physics Department, Texas Christian University, Fort Worth, TX 76129 (United States); Vallejo, H [North Side High School, Fort Worth, TX 79129 (United States)

2009-11-15

Photoluminescence (PL) and positron lifetime (LT) measurements were used on several commercial ZnO nanopowders. We observed that sample-to-sample differences in the quality of the powders overshadow any observation of probable size effects. However, the average LT for all nanocrystals is longer than in a bulk sample, consistent with the hypothesis of crystals with surface and subsurface layers rich in defects. Temperature-dependent PL spectra from the ZnO nanopowders were analyzed in detail for the bound-exciton (BEx) range and the numerical fits of the peak positions yielded activation energies that suggested different channels of recombination for the BEx. Also, fits for the full width at half maximum (FWHM) show nonlinear behavior, indicating contribution from surface phonons. We, also, used remote nitrogen and hydrogen plasma treatment on the ZnO nanosystems to manipulate their surface and subsurface defect states. We demonstrated that those plasma species induce a variety of changes in the deep defect visible emission as well as in the BEx luminescence, most likely associated with the surface/subsurface states.

Defect properties of ZnO nanopowders and their modifications induced by remote plasma treatments

International Nuclear Information System (INIS)

Paramo, J A; Peters, R M; Quarles, C A; Strzhemechny, Y M; Vallejo, H

2009-01-01

Photoluminescence (PL) and positron lifetime (LT) measurements were used on several commercial ZnO nanopowders. We observed that sample-to-sample differences in the quality of the powders overshadow any observation of probable size effects. However, the average LT for all nanocrystals is longer than in a bulk sample, consistent with the hypothesis of crystals with surface and subsurface layers rich in defects. Temperature-dependent PL spectra from the ZnO nanopowders were analyzed in detail for the bound-exciton (BEx) range and the numerical fits of the peak positions yielded activation energies that suggested different channels of recombination for the BEx. Also, fits for the full width at half maximum (FWHM) show nonlinear behavior, indicating contribution from surface phonons. We, also, used remote nitrogen and hydrogen plasma treatment on the ZnO nanosystems to manipulate their surface and subsurface defect states. We demonstrated that those plasma species induce a variety of changes in the deep defect visible emission as well as in the BEx luminescence, most likely associated with the surface/subsurface states.

Dechanneling measurements of defect depth profiles and effective cross-channel distribution of misaligned atoms in ion-irradiated gold

International Nuclear Information System (INIS)

Pronko, P.P.

1976-01-01

Defect depth profiles for self-ion and He + irradiated gold are obtained from single and multiple scatter dechanneling analysis in single-crystal gold films. Quantitative defect densities are obtained through use of atomic-scattering cross sections. Integral damage profiles are extracted from the dechanneling spectra and subsequently differentiated to yield the volume concentration of defects as a function of depth. Results from the self-ion irradiations suggest that incident ions produce defect distributions across depths much greater than predicted by random stopping theory. This is in agreement with TEM observations of others. Comparison of the experimental profiles is made with theoretical vacancy distributions predicted by defect diffusion in a radiation environment. Similarities are observed for the low-fluence irradiations, suggesting that profile characteristics may be controlled by rapid migration and loss of interstitials to the film surfaces during irradiation. Information on the across-channel distribution of misaligned atoms in the damaged films is obtained with the steady increase of transverse energy model. A predominance of slight misalignment is observed with no contribution to dechanneling coming from atoms displaced significantly close to the center of the channels. This is in keeping with what is expected for crystal distortions caused by the strain fields associated with vacancy cluster defects. (Auth.)

Measurement and interpretation of plutonium spectra

International Nuclear Information System (INIS)

Blaise, J.; Fred, M.S.; Carnall, W.T.; Crosswhite, H.M.; Crosswhite, H.

1982-01-01

The atomic spectroscopic data available for plutonium are among the rickest of any in the periodic system. They include high-resolution grating and Fourier-transform spectra as well as extensive Zeeman and isotope-shift studies. We summarize the present status of the term analysis and cite the configurations that have been identified. A least-squares adjustment of a parametric Hamiltonian for configurations of both Pu I and Pu II has shown that almost all of the expected low levels are now known. The use of a model Hamiltonian applicable to both lanthanide and actinide atomic species has been applied to the low configurations of Pu I and Pu II making use of trends predicted by ab initio calculations. This same model has been used to describe the energy levels of Pu 3+ in LaCl 3 , and an extension has permitted preliminary calculations of the spectra of other valence states

Oxygen defects in Fe-substituted Tl-system superconductors

Institute of Scientific and Technical Information of China (English)

李阳; 曹国辉; 王耘波; 马庆珠; 熊小涛; 陈宁; 马如璋; 郭应焕; 许祝安; 王劲松; 张小俊; 焦正宽; 彭获田; 周思海

1996-01-01

For Fe-doped T1-1223 phase,the excess oxygen defects induced by Fe dopants are studied by means of Hall coefficient,thermogravimetric measurements,Mossbauer spectroscopy,and the model calculation of the effective bond valence.The extra oxygen defects have effects on carrier density and microstructure of the superconductors.In the light doping level of Fe (x=0-0.05),the superconducting transition and carrier density have significant corresponding relation--the zero resistance temperature Tco and carrier densities decrease linearly with Fe dopants increasing.The thermogravimetric measurements show that the Fe3+ ions’ substituting for Cu2+ ions can bring the extra oxygen into the lattice to form extra oxygen defects.The calculation of the effective bond valence shows that the decrease of carrier density originates the strongly localized binding of the extra oxygen defects.The distortion of Cu-O layer induced by the extra oxygen defects decreases the superconductive transition temperature.The microstructure

A criterion and mechanism for power ramp defects

International Nuclear Information System (INIS)

Garlick, A.; Gravenor, J.G.

1978-02-01

The problem of power ramp defects in water reactor fuel pins is discussed in relation to results recently obtained from ramp experiments in the Steam Generating Heavy Water Reactor. Cladding cracks in the defected fuel pins were similar, both macro- and micro structurally, to those in unirradiated Zircaloy exposed to iodine stress-corrosion cracking (scc) conditions. Furthermore, when the measured stress levels for scc in short-term tests were taken as a criterion for ramp defects, UK fuel modelling codes were found to give a useful indication of defect probability under reactor service conditions. The likelihood of sticking between fuel and cladding is discussed and evidence presented which suggests that even at power a degree of adhesion may be expected in some fuel pins. The ramp defect mechanism is discussed in terms of fission product scc, initiation being by intergranular penetration and propagation by cleavage when suitably orientated grains are exposed to large dilatational stresses ahead of the main crack. (author)

Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

KAUST Repository

Venkatesh, S.

2015-01-07

Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (defect band formed due to oxygen deficiency related defect complexes. Mott\\'s theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.

Primary Ovarian Insufficiency: X chromosome defects and autoimmunity.

Science.gov (United States)

Persani, Luca; Rossetti, Raffaella; Cacciatore, Chiara; Bonomi, Marco

2009-08-01

Premature ovarian failure (POF) is a primary ovarian defect characterized by absent menarche or premature depletion of ovarian follicles before the age of 40 years. However, in several instances the distinction between definitive or intermittent POF may be difficult on clinical bases, therefore the more appropriate term Primary Ovarian Insufficiency (POI) has been recently proposed and will be used in this review. POI is a heterogeneous disorder affecting approximately 1% of women disappearance of menstrual cycles (secondary amenorrhea) associated with a defective folliculogenesis. POI is generally characterized by low levels of gonadal hormones (estrogens and inhibins) and high levels of gonadotropins (LH and FSH) (hypergonadotropic amenorrhea). Heterogeneity of POI is reflected by the variety of possible causes, including autoimmunity, toxics, drugs, as well as genetic defects. Several data indicate that POI has a strong genetic component. In this manuscript we discuss the X chromosome abnormalities that are associated with POI.

Photoelectron spectra and electronic structure of some spiroborate complexes

Energy Technology Data Exchange (ETDEWEB)

Vovna, V.I.; Tikhonov, S.A.; Lvov, I.B., E-mail: lvov.ib@dvfu.ru; Osmushko, I.S.; Svistunova, I.V.; Shcheka, O.L.

2014-12-15

Highlights: • The electronic structure of three spiroborate complexes—boron 1,2-dioxyphenylene β-diketonates has been investigated. • UV and X-ray photoelectron spectra have been interpreted. • DFT calculations have been used for interpretation of spectral bands. • The binding energy of nonequivalent carbon and oxygen atoms were measured. • The structure of X-ray photoelectron spectra of the valence electrons is in good agreement with the energies and composition of Kohn–Sham orbitals. - Abstract: The electronic structure of the valence and core levels of three spiroborate complexes – boron 1,2-dioxyphenylene β-diketonates – has been investigated by methods of UV and X-ray photoelectron spectroscopy and quantum chemical density functional theory. The ionization energy of π- and n-orbitals of the dioxyphenylene fragment and β-diketonate ligand were measured from UV photoelectron spectra. This made it possible to determine the effect of substitution of one or two methyl groups by the phenyl in diketone on the electronic structure of complexes. The binding energy of nonequivalent carbon and oxygen atoms were measured from X-ray photoelectron spectra. The results of calculations of the energy of the valence orbitals of complexes allowed us to refer bands observed in the spectra of the valence electrons to the 2s-type levels of carbon and oxygen.

Study on Properties of Energy Spectra of the Molecular Crystals

Science.gov (United States)

Pang, Xiao-Feng; Chen, Xiang-Rong

The energy-spectra of nonlinear vibration of molecular crystals such as acetanilide have been calculated by using discrete nonlinear Schrödinger equation appropriate to the systems, containing various interactions. The energy levels including higher excited states are basically consistent with experimental values obtained by infrared absorption and Raman scattering in acetanilide. We further give the features of distribution of the energy-spectra for the acetanilide. Using the energy spectra we also explained well experimental results obtained by Careri et al..

An investigation of the trade-off between the count level and image quality in myocardial perfusion SPECT using simulated images: the effects of statistical noise and object variability on defect detectability

International Nuclear Information System (INIS)

He Xin; Links, Jonathan M; Frey, Eric C

2010-01-01

Quantum noise as well as anatomic and uptake variability in patient populations limits observer performance on a defect detection task in myocardial perfusion SPECT (MPS). The goal of this study was to investigate the relative importance of these two effects by varying acquisition time, which determines the count level, and assessing the change in performance on a myocardial perfusion (MP) defect detection task using both mathematical and human observers. We generated ten sets of projections of a simulated patient population with count levels ranging from 1/128 to around 15 times a typical clinical count level to simulate different levels of quantum noise. For the simulated population we modeled variations in patient, heart and defect size, heart orientation and shape, defect location, organ uptake ratio, etc. The projection data were reconstructed using the OS-EM algorithm with no compensation or with attenuation, detector response and scatter compensation (ADS). The images were then post-filtered and reoriented to generate short-axis slices. A channelized Hotelling observer (CHO) was applied to the short-axis images, and the area under the receiver operating characteristics (ROC) curve (AUC) was computed. For each noise level and reconstruction method, we optimized the number of iterations and cutoff frequencies of the Butterworth filter to maximize the AUC. Using the images obtained with the optimal iteration and cutoff frequency and ADS compensation, we performed human observer studies for four count levels to validate the CHO results. Both CHO and human observer studies demonstrated that observer performance was dependent on the relative magnitude of the quantum noise and the patient variation. When the count level was high, the patient variation dominated, and the AUC increased very slowly with changes in the count level for the same level of anatomic variability. When the count level was low, however, quantum noise dominated, and changes in the count level

Side-by-side comparison of Raman spectra of anchored and suspended carbon nanomaterials

International Nuclear Information System (INIS)

Sidorov, Anton N; Pabba, Santosh; Cohn, Robert W; Sumanasekera, G U; Hewaparakrama, Kapila P

2008-01-01

Raman spectra of ordered carbon nanomaterials are quite sensitive to surface perturbations, including trace residues, structural defects and residual stress. This is demonstrated by a series of experiments with carbon nanotubes and graphene. Their spectra change due to subtle changes in preparation and attachment to the substrate and to each other. Differences are most clearly seen by forming a material into an air bridge and probing it in the air gap and at the anchor points. A monolayer graphene sheet, shows a larger disorder band at the anchor points than in the air gap. However, a bundle or rope of parallel-aligned single-wall nanotubes shows a larger disorder band in the gap than at the anchor points. For the graphene sheet the substrate surface deforms the graphene, leading to increases in the disorder band. For the rope, the close proximity of the nanotubes to each other appears to produce a larger stress than the rope resting on the substrate

Effects of in-cascade defect clustering on near-term defect evolution

Energy Technology Data Exchange (ETDEWEB)

Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States)

1997-08-01

The effects of in-cascade defect clustering on the nature of the subsequent defect population are being studied using stochastic annealing simulations applied to cascades generated in molecular dynamics (MD) simulations. The results of the simulations illustrates the strong influence of the defect configuration existing in the primary damage state on subsequent defect evolution. The large differences in mobility and stability of vacancy and interstitial defects and the rapid one-dimensional diffusion of small, glissile interstitial loops produced directly in cascades have been shown to be significant factors affecting the evolution of the defect distribution. In recent work, the effects of initial cluster sizes appear to be extremely important.

Electroluminescence analysis of injection-enhanced annealing of electron irradiation-induced defects in GaInP top cells for triple-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Yi, Tiancheng; Lu, Ming; Yang, Kui; Xiao, Pengfei; Wang, Rong, E-mail: wangr@bnu.edu.cn

2014-09-15

Direct injection-enhanced annealing of defects in a GaInP top cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.8 MeV electrons with a fluence of 1 × 10{sup 15} cm{sup −2} has been observed and analyzed using electroluminescence (EL) spectra. Minority-carrier injection under forward bias conditions is observed to enhance defect annealing in the GaInP top cell, and recovery of the EL intensity of the GaInP top cell was observed even at room temperature. Moreover, the injection-enhanced defect annealing rates obey a simple Arrhenius law; therefore, the annealing activation energy was determined and is equal to 0.51 eV. Lastly, the H2 defect has been identified as the primary non-radiative recombination center based on a comparison of the annealing activation energies.

Sib-pair analysis detects elevated Lp(a) levels and large variation of Lp(a) concentration in subjects with familial defective ApoB

NARCIS (Netherlands)

van der Hoek, Y. Y.; Lingenhel, A.; Kraft, H. G.; Defesche, J. C.; Kastelein, J. J.; Utermann, G.

1997-01-01

Whether or not Lp(a) plasma levels are affected by the apoB R3500Q mutation, which causes Familial Defective apoB (FDB), is still a matter of debate. We have analyzed 300 family members of 13 unrelated Dutch index patients for the apoB mutation and the apolipoprotein(a) [apo(a)] genotype. Total

Influence of low-level laser therapy on the healing of human bone maxillofacial defects: A systematic review.

Science.gov (United States)

Santinoni, Carolina Dos Santos; Oliveira, Hiskell Francine Fernandes; Batista, Victor Eduardo de Souza; Lemos, Cleidiel Aparecido Araujo; Verri, Fellippo Ramos

2017-04-01

This systematic review evaluates the effectiveness of low-level laser therapy (LLLT) to enhance maxillofacial area bone repair. A comprehensive search of studies published up to February 2017 and listed in PubMed/MEDLINE, Scopus, and Cochrane Library databases was performed in accordance with the Preferred Reporting Items for Systematic Reviews and Meta-Analyses (PRISMA) statement. The 15 selected studies evaluated a total of 374 patients (mean age, 28.5years) who were treated with LLLT. Gallium-arsenide (GaAs) and gallium aluminium arsenide (GaAlAs) were the most commonly used devices, and LLLT parameters varied greatly. Wavelengths varied from 500 to 1000nm. Tooth extraction, distraction osteogenesis, maxillary expansion, periodontal defects, orthodontic movement and maxillary cystic defects were evaluated. From the 15 selected studies, six evaluated bone repair (primary outcomes). Of these, four studies showed improvement in bone formation after using LLLT, two demonstrated improved results for only one follow up period, and one showed no additional benefits. The other 9 studies evaluated secondary parameters related to healing (secondary outcomes) in the maxillofacial area after applying LLLT, including anti-inflammatory, analgesic, and healing accelerator effects, and quality of life related to oral health. There were no adverse or negative effects of LLLT reported. Within the limitation of this review, a possible improvement in bone density can be found when LLLT is applied postoperatively in maxillofacial bony defects. LLLT also seems to promote anti-inflammatory and analgesic effects and accelerate healing, as well as enhance quality of life related to oral health. However, LLLT use protocols need to be standardized before more specific conclusions can be drawn about this subject. Copyright © 2017 Elsevier B.V. All rights reserved.

Recommendations for the presentation of infrared absorption spectra in data collections condensed phases

CERN Document Server

Becker, E D

2013-01-01

Recommendations for the Presentation of Infrared Absorption Spectra in Data Collections-A. Condensed Phases presents the recommendations related to the infrared spectra of condensed phase materials that are proposed for permanent retention in data collections. These recommendations are based on two reports published by the Coblentz Society. This book emphasizes the three levels of quality evaluation for infrared spectra as designated by the Coblentz Society, including critically defined physical data, research quality analytical spectra, and approved analytical spectra. This text discusses the

Mobility of a 5|7 defect in carbon nanotubes

Energy Technology Data Exchange (ETDEWEB)

Lee, Youngmin; Han, Jihoon; Im, Seyoung [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Science Town, Daejeon, 305-701 (Korea, Republic of); Lee, In-Ho, E-mail: sim@kaist.ac.kr [Korea Research Institute of Standards and Science (KRISS), Daejeon, 305-600 (Korea, Republic of)

2011-03-11

The movement of a 5|7 defect in the plastic deformations of a carbon nanotube (CNT) plays the role of dislocation glide in the plastic deformations of metals. This work is concerned with the atomic shift mechanism of the 5|7 defect and the energy barrier when the CNT is subjected to tensile loading. Action-derived molecular dynamics (ADMD) is applied to find the minimum energy path and the energy barrier. It is found that the tensile loads make it easy for the 5|7 defect to glide, and lower the energy barrier. The minimum load level that makes a 5|7 defect glide freely with no energy barrier in the presence of an adatom is obtained.

Mobility of a 5|7 defect in carbon nanotubes

International Nuclear Information System (INIS)

Lee, Youngmin; Han, Jihoon; Im, Seyoung; Lee, In-Ho

2011-01-01

The movement of a 5|7 defect in the plastic deformations of a carbon nanotube (CNT) plays the role of dislocation glide in the plastic deformations of metals. This work is concerned with the atomic shift mechanism of the 5|7 defect and the energy barrier when the CNT is subjected to tensile loading. Action-derived molecular dynamics (ADMD) is applied to find the minimum energy path and the energy barrier. It is found that the tensile loads make it easy for the 5|7 defect to glide, and lower the energy barrier. The minimum load level that makes a 5|7 defect glide freely with no energy barrier in the presence of an adatom is obtained.

Dirichlet topological defects

International Nuclear Information System (INIS)

Carroll, S.M.; Trodden, M.

1998-01-01

We propose a class of field theories featuring solitonic solutions in which topological defects can end when they intersect other defects of equal or higher dimensionality. Such configurations may be termed open-quotes Dirichlet topological defects,close quotes in analogy with the D-branes of string theory. Our discussion focuses on defects in scalar field theories with either gauge or global symmetries, in 3+1 dimensions; the types of defects considered include walls ending on walls, strings on walls, and strings on strings. copyright 1998 The American Physical Society

Classical Trajectories and Quantum Spectra

Science.gov (United States)

Mielnik, Bogdan; Reyes, Marco A.

1996-01-01

A classical model of the Schrodinger's wave packet is considered. The problem of finding the energy levels corresponds to a classical manipulation game. It leads to an approximate but non-perturbative method of finding the eigenvalues, exploring the bifurcations of classical trajectories. The role of squeezing turns out decisive in the generation of the discrete spectra.

Proposal and Evaluation of Subordinate Standard Solar Irradiance Spectra: Preprint

Energy Technology Data Exchange (ETDEWEB)

Habte, Aron M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Wilbert, Stefan [German Aerospace Center (DLR); Jessen, Wilko [German Aerospace Center (DLR); Gueymard, Chris [Solar Consulting Services; Polo, Jesus [CIEMAT; Bian, Zeqiang [China Meteorological Administration; Driesse, Anton [Photovoltaic Performance Labs; Marzo, Aitor [University of Antofagasta; Armstrong, Peter [Masdar Institute of Science & Technology; Vignola, Frank [University of Oregon; Ramirez, Lourdes [CIEMAT

2018-04-12

This paper introduces a concept for global tilted irradiance (GTI) subordinate standard spectra to supplement the current standard spectra used in solar photovoltaic applications as defined in ASTM G173 and IEC60904. The proposed subordinate standard spectra correspond to atmospheric conditions and tilt angles that depart significantly from the main standard spectrum, and they can be used to more accurately represent various local conditions. For the definition of subordinate standard spectra cases with an elevation 1.5 km above sea level, the question arises whether the air mass should be calculated including a pressure correction or not. This study focuses on the impact of air mass used in standard spectra, and it uses data from 29 locations to examine which air mass is most appropriate for GTI and direct normal irradiance (DNI) spectra. Overall, it is found that the pressure-corrected air mass of 1.5 is most appropriate for DNI spectra. For GTI, a non-pressure-corrected air mass of 1.5 was found to be more appropriate.

Rich magneto-absorption spectra of AAB-stacked trilayer graphene.

Science.gov (United States)

Do, Thi-Nga; Shih, Po-Hsin; Chang, Cheng-Peng; Lin, Chiun-Yan; Lin, Ming-Fa

2016-06-29

A generalized tight-binding model is developed to investigate the feature-rich magneto-optical properties of AAB-stacked trilayer graphene. Three intragroup and six intergroup inter-Landau-level (inter-LL) optical excitations largely enrich magneto-absorption peaks. In general, the former are much higher than the latter, depending on the phases and amplitudes of LL wavefunctions. The absorption spectra exhibit single- or twin-peak structures which are determined by quantum modes, LL energy spectra and Fermion distribution. The splitting LLs, with different localization centers (2/6 and 4/6 positions in a unit cell), can generate very distinct absorption spectra. There exist extra single peaks because of LL anti-crossings. AAB, AAA, ABA, and ABC stackings considerably differ from one another in terms of the inter-LL category, frequency, intensity, and structure of absorption peaks. The main characteristics of LL wavefunctions and energy spectra and the Fermi-Dirac function are responsible for the configuration-enriched magneto-optical spectra.

Defect evolution in multiwalled carbon nanotube films irradiated by Ar ions

International Nuclear Information System (INIS)

Honda, Shin-ichi; Nanba, Shuhei; Hasegawa, Yoichi

2012-01-01

Controlling defect structure in multiwalled carbon nanotube (MWCNT) is essential to realization of MWCNT devices. Here, we show that the diagram of the Raman intensity ratio of the G to D peaks and the G peak width can reveal two damaging stages of MWCNT films. In a transition period, additional peaks appeared in the X-ray absorption spectra, thereby indicating some significant change in the electronic structure. Also, a remarkable increase occurred in the diameter of the MWCNTs in the latter stage, suggesting the formation of dislocation dipoles which may relate to the change in the properties of field-emission devices. (author)

Observation of Cd 4d95s25p J=3 autoionizing levels in (e,2e) energy spectra

International Nuclear Information System (INIS)

Martin, N.L.S.; Bauman, R.P.; Wilson, M.

1998-01-01

Cadmium (e,2e) energy spectra have been measured for kinematics corresponding to a momentum transfer of 1 a.u. Two previously unknown cadmium autoinizing levels have been observed. Their energies are in excellent agreement with existing ab initio structure calculations of the 4d 9 5s 2 5p J=3 levels. One level is easily seen at an ejected-electron direction along the momentum-transfer axis, but is absent for a direction 39 degree away from this axis. The opposite is true for the other level; it is absent in the former, but present in the latter case. This behavior is in agreement with a calculation that takes into account that the J=3 levels can autoionize into both singlet and triplet 5sEf continua. The intensity of the new levels, relative to the well-known 4d 9 5s 2 5p J=1 levels, agrees well with a plane-wave Born approximation calculation for the J=3 levels. The third 4d 9 5s 2 5p J=3 level is calculated to lie within the broad 4d 9 5s 2 5p 1 P 1 level and cannot be seen in the present experiments. copyright 1998 The American Physical Society

Non-LTE Stellar Population Synthesis of Globular Clusters Using Synthetic Integrated Light Spectra. I. Constructing the IL Spectra

Science.gov (United States)

Young, Mitchell. E.; Short, C. Ian

2017-02-01

We present an investigation of the globular cluster population synthesis method of McWilliam & Bernstein, focusing on the impact of non-LTE (NLTE) modeling effects and color-magnitude diagram (CMD) discretization. Johnson-Cousins-Bessel U - B, B-V, V-I, and J-K colors are produced for 96 synthetic integrated light (IL) spectra with two different discretization prescriptions and three degrees of NLTE treatment. These color values are used to compare NLTE- and LTE-derived population ages. Relative contributions of different spectral types to the IL spectra for different wavebands are measured. IL NLTE spectra are shown to be more luminous in the UV and optical than LTE spectra, but show stronger absorption features in the IR. The main features showing discrepancies between NLTE and LTE IL spectra may be attributed to light metals, primarily Fe I, Ca I, and Ti I, as well as TiO molecular bands. Main-sequence stars are shown to have negligible NLTE effects at IR wavelengths compared to more evolved stars. Photometric color values are shown to vary at the millimagnitude level as a function of CMD discretization. Finer CMD sampling for the upper main sequence and turnoff, base of the red giant branch, and the horizontal branch minimizes this variation. Differences in ages derived from LTE and NLTE IL spectra are found to range from 0.55 to 2.54 Gyr, comparable to the uncertainty in GC ages derived from color indices with observational uncertainties of 0.01 mag, the limiting precision of the Harris catalog.

Impurity-defect complexes in hydrogenated amorphous silicon

International Nuclear Information System (INIS)

Yang, L.H.; Fong, C.Y.; Nichols, C.S.

1991-01-01

The two most outstanding features observed for dopants in hydrogenated amorphous silicon (a-Si:H)-a shift in the Fermi level accompanied by an increase in the defect density and an absence of degenerate doping have previously been postulated to stem from the formation of substitutional dopant-dangling bond complexes. Using first-principles self-consistent pseudopotential calculations in conjunction with a supercell model for the amorphous network and the ability of network relaxation from the first-principles results. The authors have studied the electronic and structural properties of substitutional fourfold-coordinated phosphorus and boron at the second neighbor position to a dangling bond defect. This paper demonstrates that such impurity-defect complexes can account for the general features observed experimentally in doped a-Si:H

Defect forces, defect couples and path integrals in fracture mechanics

International Nuclear Information System (INIS)

Roche, R.L.

1979-07-01

In this work, it is shown that the path integrals can be introduced without any reference to the material behavior. The method is based on the definition in a continuous medium of a set of vectors and couples having the dimension of a force or a moment. More precisely, definitions are given of volume defect forces, surface defect forces, volume defect couples, and surface defect couples. This is done with the help of the stress working variation of a particule moving through the solid. The most important result is: the resultant of all the defect forces included in a volume V is the J integral on the surface surrounding V and the moment resultant is the L integral. So these integrals are defined without any assumption on the material constitutive equation. Another result is the material form of the virtual work principle - defect forces are acting like conventional forces in the conventional principles of virtual work. This lead to the introduction of the energy momentum tensor and of the associated couple stress. Application of this method is made to fracture mechanics in studying the defect forces distribution around a crack [fr

Phase defects and spatiotemporal disorder in traveling-wave convection patterns

International Nuclear Information System (INIS)

La Porta, A.; Surko, C.M.

1997-01-01

Spatiotemporal disorder is studied in traveling-wave convection in ethanol-water mixtures. Spectral measures of disorder, linear correlation functions, and mutual information are used to characterize the patterns, and are found to give a weak indication of the level of disorder. The calculation of the complex order parameter for experimental patterns is described. It is found that the ordering of the patterns is accompanied by a dramatic change in the topological structure of the order parameter. Specific arrangements of defects are found to be associated with the elements of traveling-wave patterns, and the net charge and total number of defects is introduced as a measure of disorder in the patterns. The coarsening of the patterns is marked by an accumulation of net charge and a dramatic decrease in the number of defects. The physical significance of the defects is discussed, and it is shown that the phase velocity of the waves is lower in the vicinity of the defects. The defect-defect correlation functions are calculated for the convection patterns. It is shown that the ordering of the patterns is closely related to the apparent defect-defect interactions. copyright 1997 The American Physical Society

Plasma folate levels and associated factors in women planning to become pregnant in a population with high prevalence of neural tube defects.

Science.gov (United States)

Ma, Rui; Wang, Linlin; Jin, Lei; Li, Zhiwen; Ren, Aiguo

2017-07-17

Optimal blood folate levels of women before pregnancy are critical to the prevention of neural tube defects (NTDs). However, few studies have focused on blood folate levels of women planning to become pregnant. The aims of this study were to assess plasma folate levels in women who planned to become pregnant in a population with high prevalence of NTDs, to identify factors associated with plasma folate levels, and to evaluate the risk of NTDs at the population level. A total of 2065 women were enrolled at the time of premarital health check-up in two rural counties in northern China from November 2009 to December 2012. Fasting venous blood samples were collected and plasma folate concentrations were measured by microbiological method. The overall median of plasma folate was 10.5 nmol/L. 50% of the women had a plasma folate level below 10.5 nmol/L, a cutoff for megaloblastic anemia, and 88% below 18 nmol/L, a proposed optimal plasma folate level for the prevention of NTDs. Folic acid supplementation was the only factor to be associated with plasma folate concentrations, but only 1.9% of the women reported having taken folic acid supplements. A population risk of 29.3 NTD cases per 10,000 births was predicted. Women who planned to become pregnant had very low plasma folate in the population. Folic acid supplementation was the only factor to be associated with a high plasma folate concentration. High NTD risk would remain if women would get pregnant without having taken folic acid supplements. Birth Defects Research 109:1039-1047, 2017. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Unexpected properties of the inductively coupled plasma induced defect in germanium

Energy Technology Data Exchange (ETDEWEB)

Coelho, S.M.M., E-mail: sergio@up.ac.za; Auret, F.D.; Janse van Rensburg, P.J.; Nel, J.M.

2014-04-15

Inductively coupled plasma (ICP) etching of germanium introduces a single defect, the E{sub 0.31} electron trap, for a large range of argon partial pressures from 4×10{sup –3} to 6.5×10{sup –4} mbar that correspond to ion energies of 8 to 60 eV. Ge of three crystallographic orientations, (1 0 0), (1 1 0) and (1 1 1), treated with 20 and 60 eV ICP had defect concentration profiles that were similar in appearance, with a maximum concentration of 10{sup 14} cm{sup −3} extending more than a µm into the material, approximately three orders of magnitude deeper than what TRIM simulations predicted. All profiles were measured using Laplace deep level transient spectroscopy (L-DLTS), a technique that is sensitive to defect concentrations as low as 10{sup 11} cm{sup −3}. Isochronal annealing of samples showed concentration curves broadening after a 400 K anneal and decreasing to the 10{sup 13} cm{sup −3} level after a 450 K anneal. Unannealed samples measured after a year exhibited similar decreases in defect concentration without broadening of their profiles. A 550 K anneal lowered the defect concentration to levels below the L-DLTS detection limit. Thereafter additional plasma treatment of the surface failed to reintroduce this defect indicating that the structure required for the formation of E{sub 0.31} was no longer present in the region under observation.

Chemical analysis using coincidence Doppler broadening and supporting first-principles theory: Applications to vacancy defects in compound semiconductors

International Nuclear Information System (INIS)

Makkonen, I.; Rauch, C.; Mäki, J.-M.; Tuomisto, F.

2012-01-01

The Doppler broadening of the positron annihilation radiation contains information on the chemical environment of vacancy defects trapping positrons in solids. The measured signal can, for instance, reveal impurity atoms situated next to vacancies. As compared to integrated quantities such as the positron annihilation rate or the annihilation line shape parameters, the full Doppler spectrum measured in the coincidence mode contains much more useful information for defect identification. This information, however, is indirect and complementary understanding is needed to fully interpret the results. First-principles calculations are a valuable tool in the analysis of measured spectra. One can construct an atomic-scale model for a given candidate defect, calculate from first principles the corresponding Doppler spectrum, and directly compare results between experiment and theory. In this paper we discuss recent examples of successful combinations of coincidence Doppler broadening measurements and supporting first-principles calculations. These demonstrate the predictive power of state-of-the-art calculations and the usefulness of such an approach in the chemical analysis of vacancy defects.

Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

Directory of Open Access Journals (Sweden)

S. S. Kushvaha

2014-02-01

Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

Neural Tube Defects

Science.gov (United States)

Neural tube defects are birth defects of the brain, spine, or spinal cord. They happen in the ... that she is pregnant. The two most common neural tube defects are spina bifida and anencephaly. In ...

Prevention of congenital defects induced by prenatal alcohol exposure (Conference Presentation)

Science.gov (United States)

Sheehan, Megan M.; Karunamuni, Ganga; Pedersen, Cameron J.; Gu, Shi; Doughman, Yong Qiu; Jenkins, Michael W.; Watanabe, Michiko; Rollins, Andrew M.

2017-02-01

Nearly 2 million women in the United States alone are at risk for an alcohol-exposed pregnancy, including more than 600,000 who binge drink. Even low levels of prenatal alcohol exposure (PAE) can lead to a variety of birth defects, including craniofacial and neurodevelopmental defects, as well as increased risk of miscarriages and stillbirths. Studies have also shown an interaction between drinking while pregnant and an increase in congenital heart defects (CHD), including atrioventricular septal defects and other malformations. We have previously established a quail model of PAE, modeling a single binge drinking episode in the third week of a woman's pregnancy. Using optical coherence tomography (OCT), we quantified intraventricular septum thickness, great vessel diameters, and atrioventricular valve volumes. Early-stage ethanol-exposed embryos had smaller cardiac cushions (valve precursors) and increased retrograde flow, while late-stage embryos presented with gross head/body defects, and exhibited smaller atrio-ventricular (AV) valves, interventricular septum, and aortic vessels. We previously showed that supplementation with the methyl donor betaine reduced gross defects, improved survival rates, and prevented cardiac defects. Here we show that these preventative effects are also observed with folate (another methyl donor) supplementation. Folate also appears to normalize retrograde flow levels which are elevated by ethanol exposure. Finally, preliminary findings have shown that glutathione, a crucial antioxidant, is noticeably effective at improving survival rates and minimizing gross defects in ethanol-exposed embryos. Current investigations will examine the impact of glutathione supplementation on PAE-related CHDs.

Mechanisms of Mitochondrial Defects in Gulf War Syndrome

Science.gov (United States)

2011-08-01

alanine. Additional abnormalities included a small fiber neuropathy in 35% (7/20) and cerebral folate defects. Cerebral folate deficiency (CFD) is...CoA ligase, ADP-forming, beta subunit (SUCLA2), Thymidine kinase 2, mitochondrial ( TK2 ), Thymidine phosphorylase (TYMP) may harbor mutations or that...syndrome patients have tissue deficiencies in CoQ10. This abnormality is observed in GWS patients. This defect can be treated with high levels of coenzyme

The excited J = 01 Σu+ levels of D2: Measurements and ab initio quantum defect study

Science.gov (United States)

Glass-Maujean, M.; Jungen, Ch.; Dickenson, G. D.; de Oliveira, N.; Ubachs, W.

2016-02-01

The DESIRS beamline of the SOLEIL synchrotron facility, equipped with a vacuum ultraviolet Fourier-transform spectrometer has been used to measure P (N″ = 1) (N -N″ = - 1) absorption transitions of the D2 molecule. Some 44 P-lines were assigned and their transition frequencies determined up to excitation energies of 134,000 cm-1 above the ground state, thereby extending the earlier work by various authors, and considerably improving the spectral accuracy (<0.1 cm-1). The assignments have been aided by first principles multichannel quantum defect theory (MQDT) calculations. These calculations also provide predictions of the autoionization widths of the upper levels which agree well with the observed resonance widths.

Vacancy defect and defect cluster energetics in ion-implanted ZnO

Science.gov (United States)

Dong, Yufeng; Tuomisto, F.; Svensson, B. G.; Kuznetsov, A. Yu.; Brillson, Leonard J.

2010-02-01

We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured transformation of Zn vacancies to vacancy clusters with annealing shifts defect energies significantly lower in the ZnO band gap. Zn and corresponding O vacancy-related depth distributions provide a consistent explanation of depth-dependent resistivity and carrier-concentration changes induced by ion implantation.

Physical meaning of conductivity spectra for ZnO ceramics

Institute of Scientific and Technical Information of China (English)

Cheng Peng-Fei; Li Sheng-Tao; Li Jian-Ying; Ding Can; Yang Yan

2012-01-01

With the help of broadband dielectric spectroscopy in a wide temperature and frequency range,the conductivity spectra of ZnO polycrystalline ceramics are measured and the direct-current-like (DC-like) conductivity and relaxation polarization conductivity are observed successively along the frequency axis.According to the classical Debye theory and Cole-Cole equation,the physical meanings of the two conductivities are discussed.It is found that the DC-like conductivity corresponds to electron transportation over the Schottky barrier at the grainboundary.The relaxation polarization conductivity corresponds to electronic trap relaxation of intrinsic point defects (zinc interstitial and oxygen vacancy).When in the high frequency region,the relaxation conductivity obeys the universal law with the index n equal to the index α in the Cole-Cole equation as an indictor of disorder degree.

Ball bearing defect models: A study of simulated and experimental fault signatures

Science.gov (United States)

Mishra, C.; Samantaray, A. K.; Chakraborty, G.

2017-07-01

Numerical model based virtual prototype of a system can serve as a tool to generate huge amount of data which replace the dependence on expensive and often difficult to conduct experiments. However, the model must be accurate enough to substitute the experiments. The abstraction level and details considered during model development depend on the purpose for which simulated data should be generated. This article concerns development of simulation models for deep groove ball bearings which are used in a variety of rotating machinery. The purpose of the model is to generate vibration signatures which usually contain features of bearing defects. Three different models with increasing level-of-complexity are considered: a bearing kinematics based planar motion block diagram model developed in MATLAB Simulink which does not explicitly consider cage and traction dynamics, a planar motion model with cage, traction and contact dynamics developed using multi-energy domain bond graph formalism in SYMBOLS software, and a detailed spatial multi-body dynamics model with complex contact and traction mechanics developed using ADAMS software. Experiments are conducted using Spectra Quest machine fault simulator with different prefabricated faulted bearings. The frequency domain characteristics of simulated and experimental vibration signals for different bearing faults are compared and conclusions are drawn regarding usefulness of the developed models.

He-like spectra from laboratory plasmas and solar flares

International Nuclear Information System (INIS)

Kato, Takako

1990-01-01

The X-ray spectra of He-like ions from tokamaks and solar flares have been measured. Several physical parameters of plasma can be derived from the X-ray spectra of He-like ions. The ion temperature can be derived from the doppler width of a resonance line. The electron temperature is obtained from the intensity ratio of dielectronic satellite lines to a resonance line. The energy level for the prominent lines is shown. The line q is produced mainly by the inner-shell excitation of Li-like ions, and line beta is produced by the inner-shell excitation of Be-like ions. The intensity ratios give the ion density ratios. The intensities of the intercombination and the forbidden lines are affected by the recombination from H-like ions. The synthetic spectra including excitation, ionization and recombination processes are fitted to the measurement. In this paper, the He-like X-ray spectra of the titanium ions from TFTR tokamak plasma and of the iron ions from solar flares are discussed, paying attention to the presence of high energy electrons which affect the spectra and ionization balance. Atomic data, the spectra from the TFTR tokamak, the spectra from solar flares and so on are described. (K.I.)

PGOPHER: A program for simulating rotational, vibrational and electronic spectra

International Nuclear Information System (INIS)

Western, Colin M.

2017-01-01

The PGOPHER program is a general purpose program for simulating and fitting molecular spectra, particularly the rotational structure. The current version can handle linear molecules, symmetric tops and asymmetric tops and many possible transitions, both allowed and forbidden, including multiphoton and Raman spectra in addition to the common electric dipole absorptions. Many different interactions can be included in the calculation, including those arising from electron and nuclear spin, and external electric and magnetic fields. Multiple states and interactions between them can also be accounted for, limited only by available memory. Fitting of experimental data can be to line positions (in many common formats), intensities or band contours and the parameters determined can be level populations as well as rotational constants. PGOPHER is provided with a powerful and flexible graphical user interface to simplify many of the tasks required in simulating, understanding and fitting molecular spectra, including Fortrat diagrams and energy level plots in addition to overlaying experimental and simulated spectra. The program is open source, and can be compiled with open source tools. This paper provides a formal description of the operation of version 9.1. - Highlights: • Easy-to-use graphical interface for assigning and understanding molecular spectra. • Simulates rotational and vibrational structure of many types of molecular spectra. • Fits molecular properties to line positions or spectral contours. • Handles linear molecules and symmetric and asymmetric tops. • Handles perturbations, nuclear and electron spin, and electric and magnetic fields.

Monte Carlo simulations of plutonium gamma-ray spectra

International Nuclear Information System (INIS)

Koenig, Z.M.; Carlson, J.B.; Wang, Tzu-Fang; Ruhter, W.D.

1993-01-01

Monte Carlo calculations were investigated as a means of simulating the gamma-ray spectra of Pu. These simulated spectra will be used to develop and evaluate gamma-ray analysis techniques for various nondestructive measurements. Simulated spectra of calculational standards can be used for code intercomparisons, to understand systematic biases and to estimate minimum detection levels of existing and proposed nondestructive analysis instruments. The capability to simulate gamma-ray spectra from HPGe detectors could significantly reduce the costs of preparing large numbers of real reference materials. MCNP was used for the Monte Carlo transport of the photons. Results from the MCNP calculations were folded in with a detector response function for a realistic spectrum. Plutonium spectrum peaks were produced with Lorentzian shapes, for the x-rays, and Gaussian distributions. The MGA code determined the Pu isotopes and specific power of this calculated spectrum and compared it to a similar analysis on a measured spectrum

Defect structure in proton-irradiated copper and nickel

International Nuclear Information System (INIS)

Tsukuda, Noboru; Ehrhart, P.; Jaeger, W.; Schilling, W.; Dworschak, F.; Gadalla, A.A.

1987-01-01

This single crystals of copper or nickel with a thickness of about 10 μm are irradiated with 3 MeV protons at room temperature and the structures of resultant defects are investigated based on measurements of the effects of irradiation on the electrical resistivity, length, lattice constants, x-ray diffraction line profile and electron microscopic observations. The measurements show that the electrical resistivity increases with irradiation dose, while leveling off at high dose due to overlapping of irradiation cascades. The lattice constants decreases, indicating that many vacancies still remain while most of the interstitial stoms are eliminated, absorbed or consumed for dislocation loop formation. The x-ray line profile undergoes broadening, which is the result of dislocation loops, dislocation networks and SFT's introduced by the proton irradiation. Various defects have different effects though they cannot be identified separately from the profile alone. A satellite peak appears at a low angle, which seems to arise from periodic defect structures that are found in electron microscopic observations. In both copper and nickel, such periodic defect structures are seen over a wide range from high to low dose. Defect-free and defect-rich domains (defect walls), 0.5 to several μm in size, are alingned parallel to the {001} plane at intervals of 60 nm. The defect walls, which consist of dislocations, dislocation loops and SFT's, is 20 - 40 nm thick. (Nogami, K.)

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

Science.gov (United States)

Stupica, John; Goradia, Chandra; Swartz, Clifford K.; Weinberg, Irving

1987-01-01

Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

Effect of intermixing at CdS/CdTe interface on defect properties

Energy Technology Data Exchange (ETDEWEB)

Park, Ji-Sang, E-mail: jspark@anl.gov; Yang, Ji-Hui; Barnes, Teresa [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Wei, Su-Huai, E-mail: suhuaiwei@csrc.ac.cn [Beijing Computational Science Research Center, Beijing 100094 (China)

2016-07-25

We investigated the stability and electronic properties of defects in CdTe{sub 1−x}S{sub x} that can be formed at the CdS/CdTe interface. As the anions mix at the interface, the defect properties are significantly affected, especially those defects centered at cation sites like Cd vacancy, V{sub Cd}, and Te on Cd antisite, Te{sub Cd}, because the environment surrounding the defect sites can have different configurations. We show that at a given composition, the transition energy levels of V{sub Cd} and Te{sub Cd} become close to the valence band maximum when the defect has more S atoms in their local environment, thus improving the device performance. Such beneficial role is also found at the grain boundaries when the Te atom is replaced by S in the Te-Te wrong bonds, reducing the energy of the grain boundary level. On the other hand, the transition levels with respect to the valence band edge of CdTe{sub 1−x}S{sub x} increases with the S concentration as the valence band edge decreases with the S concentration, resulting in the reduced p-type doping efficiency.

Study on the intrinsic defects in tin oxide with first-principles method

Science.gov (United States)

Sun, Yu; Liu, Tingyu; Chang, Qiuxiang; Ma, Changmin

2018-04-01

First-principles and thermodynamic methods are used to study the contribution of vibrational entropy to defect formation energy and the stability of the intrinsic point defects in SnO2 crystal. According to thermodynamic calculation results, the contribution of vibrational entropy to defect formation energy is significant and should not be neglected, especially at high temperatures. The calculated results indicate that the oxygen vacancy is the major point defect in undoped SnO2 crystal, which has a higher concentration than that of the other point defect. The property of negative-U is put forward in SnO2 crystal. In order to determine the most stable defects much clearer under different conditions, the most stable intrinsic defect as a function of Fermi level, oxygen partial pressure and temperature are described in the three-dimensional defect formation enthalpy diagrams. The diagram visually provides the most stable point defects under different conditions.

Fermi liquid character in the photoemission/inverse photoemission spectra of highly correlated electron systems

International Nuclear Information System (INIS)

Riseborough, P.S.

1990-01-01

We calculate the photoemission/inverse photoemission spectrum for an N-fold degenerate Hubbard model, in the 1/N approximation. The spectra are broadened, and for sufficiently large Coulomb interaction strengths the spectra show satellites both in the photoemission and the brehmstrahlung isochromat spectroscopy portions of the spectra. The intensity of the spectra at the fermi level are equal to the noninteracting values, in accordance with Luttinger's theorem. We show that this can result in a temperature-dependent peak at the Fermi level; the width of the peak is governed by the quasi-particle lifetime. We relate the temperature dependent peak to the Fermi-liquid properties

International conference on defects in insulating crystals

International Nuclear Information System (INIS)

1977-01-01

Short summaries of conference papers are presented. Some of the conference topics included transport properties, defect levels, superionic conductors, radiation effects, John-Teller effect, electron-lattice interactions, and relaxed excited states

Intrinsic and extrinsic defects in a family of coal-derived graphene quantum dots

Energy Technology Data Exchange (ETDEWEB)

Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu, E-mail: tour@rice.edu [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Tol, Johan van [National High Magnetic Field Laboratory, Florida State University, 1800 E. Paul Dirac Drive, Tallahassee, Florida 32310 (United States); Ye, Ruquan [Department of Chemistry, Rice University, MS-222, 6100 Main Street, Houston, Texas 77005 (United States); Tour, James M., E-mail: ssingam@ncsu.edu, E-mail: tour@rice.edu [Department of Chemistry, Rice University, MS-222, 6100 Main Street, Houston, Texas 77005 (United States); Department of Materials Science and NanoEngineering, Rice University, MS-222, 6100 Main Street, Houston, Texas 77005 (United States); Smalley Institute for Nanoscale Science and Technology, Rice University, MS-222, 6100 Main Street, Houston, Texas 77005 (United States)

2015-11-23

In this letter, we report on the high frequency (239.2 and 336 GHz) electron spin resonance (ESR) studies performed on graphene quantum dots (GQDs), prepared through a wet chemistry route from three types of coal: (a) bituminous, (b) anthracite, and (c) coke; and from non-coal derived GQDs. The microwave frequency-, power-, and temperature-dependent ESR spectra coupled with computer-aided simulations reveal four distinct magnetic defect centers. In bituminous- and anthracite-derived GQDs, we have identified two of them as intrinsic carbon-centered magnetic defect centers (a broad signal of peak to peak width = 697 (10{sup −4} T), g = 2.0023; and a narrow signal of peak to peak width = 60 (10{sup −4} T), g = 2.003). The third defect center is Mn{sup 2+} ({sup 6}S{sub 5/2}, 3d{sup 5}) (signal width = 61 (10{sup −4} T), g = 2.0023, A{sub iso} = 93(10{sup −4} T)), and the fourth defect is identified as Cu{sup 2+} ({sup 2}D{sub 5/2}, 3d{sup 9}) (g{sub ⊥} = 2.048 and g{sub ‖} = 2.279), previously undetected. Coke-derived and non-coal derived GQDs show Mn{sup 2+} and two-carbon related signals, and no Cu{sup 2+} signal. The extrinsic impurities most likely originate from the starting coal. Furthermore, Raman, photoluminescence, and ESR measurements detected no noticeable changes in the properties of the bituminous GQDs after one year. This study highlights the importance of employing high frequency ESR spectroscopy in identifying the (magnetic) defects, which are roadblocks for spin relaxation times of graphene-based materials. These defects would not have been possible to probe by other spin transport measurements.

Protein-Level Integration Strategy of Multiengine MS Spectra Search Results for Higher Confidence and Sequence Coverage.

Science.gov (United States)

Zhao, Panpan; Zhong, Jiayong; Liu, Wanting; Zhao, Jing; Zhang, Gong

2017-12-01

Multiple search engines based on various models have been developed to search MS/MS spectra against a reference database, providing different results for the same data set. How to integrate these results efficiently with minimal compromise on false discoveries is an open question due to the lack of an independent, reliable, and highly sensitive standard. We took the advantage of the translating mRNA sequencing (RNC-seq) result as a standard to evaluate the integration strategies of the protein identifications from various search engines. We used seven mainstream search engines (Andromeda, Mascot, OMSSA, X!Tandem, pFind, InsPecT, and ProVerB) to search the same label-free MS data sets of human cell lines Hep3B, MHCCLM3, and MHCC97H from the Chinese C-HPP Consortium for Chromosomes 1, 8, and 20. As expected, the union of seven engines resulted in a boosted false identification, whereas the intersection of seven engines remarkably decreased the identification power. We found that identifications of at least two out of seven engines resulted in maximizing the protein identification power while minimizing the ratio of suspicious/translation-supported identifications (STR), as monitored by our STR index, based on RNC-Seq. Furthermore, this strategy also significantly improves the peptides coverage of the protein amino acid sequence. In summary, we demonstrated a simple strategy to significantly improve the performance for shotgun mass spectrometry by protein-level integrating multiple search engines, maximizing the utilization of the current MS spectra without additional experimental work.

Multi-level spondylolysis.

Science.gov (United States)

Hersh, David S; Kim, Yong H; Razi, Afshin

2011-01-01

The incidence of isthmic spondylolysis is approximately 3% to 6% in the general population. Spondylolytic defects involving multiple vertebral levels, on the other hand, are extremely rare. Only a handful of reports have examined the outcomes of surgical treatment of multi-level spondylolysis. Here, we present one case of bilateral pars defects at L3, L4, and L5. The patient, a 46-year-old female, presented with lower back pain radiating into the left lower extremity. Radiographs and CT scans of the lumbar spine revealed bilateral pars defects at L3-L5. The patient underwent lumbar discectomy and interbody fusion of L4-S1 as well as direct repair of the pars defect at L3. There were no postoperative complications, and by seven months the patient had improved clinically. While previous reports describe the use of either direct repair or fusion in the treatment of spondylolysis, we are unaware of reports describing the use of both techniques at adjacent levels.

International conference on defects in insulating crystals

Energy Technology Data Exchange (ETDEWEB)

1977-01-01

Short summaries of conference papers are presented. Some of the conference topics included transport properties, defect levels, superionic conductors, radiation effects, John-Teller effect, electron-lattice interactions, and relaxed excited states. (SDF)

Automatic analysis of charged particle spectra

International Nuclear Information System (INIS)

Seres, Z.; Kiss, A.

1975-11-01

A computer program system is developed for off-line automatic analysis of a series of charged particle spectra measured by solid-state detectors and collected on magnetic tapes. The procedure results in complete angular distributions for the excited levels of the final nucleus up to about 15 MeV. (orig.) [de

Radiation damage and defect behavior in proton irradiated lithium-counterdoped n/sup +/p silicon solar cells

International Nuclear Information System (INIS)

Stupica, J.; Goradia, C.; Swartz, C.K.; Weinberg, I.

1987-01-01

Two lithium-counterdoped n/sup +/p silicon solar cells with different lithium concentrations were irradiated by 10 MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the higher radiation resistance. Deep level defects were studied using deep level transient spectroscopy which yielded two defects that were lithium related. Relating the defect energy levels obtained from this study under 10 MeV protons, with an earlier work using 1 MeV electron irradiations shows no correlation of the defect energy levels. There is one marked comparison though. The absence of the boron interstitial-oxygen interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The present results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell

Calculation of nuclear level density parameters of some light deformed medical radionuclides using collective excitation modes of observed nuclear spectra

International Nuclear Information System (INIS)

Okuducu, S.; Sarac, H.; Akti, N. N.; Boeluekdemir, M. H.; Tel, E.

2010-01-01

In this study the nuclear energy level density based on nuclear collective excitation mechanism has been identified in terms of the low-lying collective level bands at near the neutron binding energy. Nuclear level density parameters of some light deformed medical radionuclides used widely in medical applications have been calculated by using different collective excitation modes of observed nuclear spectra. The calculated parameters have been used successfully in estimation of the neutron-capture cross section basic data for the production of new medical radionuclides. The investigated radionuclides have been considered in the region of mass number 40< A< 100. The method used in the present work assumes equidistance spacing of the collective coupled state bands of the interest radionuclides. The present calculated results have been compared with the compiled values from the literatures for s-wave neutron resonance data.

On holographic defect entropy

International Nuclear Information System (INIS)

Estes, John; Jensen, Kristan; O’Bannon, Andy; Tsatis, Efstratios; Wrase, Timm

2014-01-01

We study a number of (3+1)- and (2+1)-dimensional defect and boundary conformal field theories holographically dual to supergravity theories. In all cases the defects or boundaries are planar, and the defects are codimension-one. Using holography, we compute the entanglement entropy of a (hemi-)spherical region centered on the defect (boundary). We define defect and boundary entropies from the entanglement entropy by an appropriate background subtraction. For some (3+1)-dimensional theories we find evidence that the defect/boundary entropy changes monotonically under certain renormalization group flows triggered by operators localized at the defect or boundary. This provides evidence that the g-theorem of (1+1)-dimensional field theories generalizes to higher dimensions

Effect of deep native defects on ultrasound propagation in TlInS{sub 2} layered crystal

Energy Technology Data Exchange (ETDEWEB)

Seyidov, MirHasan Yu., E-mail: smirhasan@gtu.edu.tr [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid Avenue, 33, AZ-1143 Baku (Azerbaijan); Suleymanov, Rauf A. [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid Avenue, 33, AZ-1143 Baku (Azerbaijan); Odrinsky, Andrei P. [Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov Avenue 13, Vitebsk 210717 (Belarus); Kırbaş, Cafer [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); The Scientific and Technological Research Council of Turkey, National Metrology Institute (TUBITAK UME), PQ 54 41470 Gebze, Kocaeli (Turkey)

2016-09-15

We have investigated p-type semiconductor–ferroelectric TlInS{sub 2} by means of Photo-Induced Current Transient Spectroscopy (PICTS) technique in the temperature range 77–350 K for the detection of native deep defect levels in TlInS{sub 2}. Five native deep defect levels were detected and their energy levels and capture cross sections were evaluated. Focusing on these data, the influence of these defects on the longitudinal and transverse ultrasound waves propagation as well as the effect of electric field on ultrasound waves were studied at different temperatures. The acoustic properties were investigated by the pulse-echo method. The direct contribution of thermally activated charged defects to the acoustic properties of TlInS{sub 2} was demonstrated. The key role of charged native deep level defects in elastic properties of TlInS{sub 2} was shown.

Immersion lithography defectivity analysis at DUV inspection wavelength

Science.gov (United States)

Golan, E.; Meshulach, D.; Raccah, N.; Yeo, J. Ho.; Dassa, O.; Brandl, S.; Schwarz, C.; Pierson, B.; Montgomery, W.

2007-03-01

Significant effort has been directed in recent years towards the realization of immersion lithography at 193nm wavelength. Immersion lithography is likely a key enabling technology for the production of critical layers for 45nm and 32nm design rule (DR) devices. In spite of the significant progress in immersion lithography technology, there remain several key technology issues, with a critical issue of immersion lithography process induced defects. The benefits of the optical resolution and depth of focus, made possible by immersion lithography, are well understood. Yet, these benefits cannot come at the expense of increased defect counts and decreased production yield. Understanding the impact of the immersion lithography process parameters on wafer defects formation and defect counts, together with the ability to monitor, control and minimize the defect counts down to acceptable levels is imperative for successful introduction of immersion lithography for production of advanced DR's. In this report, we present experimental results of immersion lithography defectivity analysis focused on topcoat layer thickness parameters and resist bake temperatures. Wafers were exposed on the 1150i-α-immersion scanner and 1200B Scanner (ASML), defect inspection was performed using a DUV inspection tool (UVision TM, Applied Materials). Higher sensitivity was demonstrated at DUV through detection of small defects not detected at the visible wavelength, indicating on the potential high sensitivity benefits of DUV inspection for this layer. The analysis indicates that certain types of defects are associated with different immersion process parameters. This type of analysis at DUV wavelengths would enable the optimization of immersion lithography processes, thus enabling the qualification of immersion processes for volume production.

Scanning tip measurement for identification of point defects

Directory of Open Access Journals (Sweden)

Raineri Vito

2011-01-01

Full Text Available Abstract Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM.

Evolution of Defect Structures and Deep Subgap States during Annealing of Amorphous In-Ga-Zn Oxide for Thin-Film Transistors

Science.gov (United States)

Jia, Junjun; Suko, Ayaka; Shigesato, Yuzo; Okajima, Toshihiro; Inoue, Keiko; Hosomi, Hiroyuki

2018-01-01

We investigate the evolution behavior of defect structures and the subgap states in In-Ga-Zn oxide (IGZO) films with increasing postannealing temperature by means of extended x-ray absorption fine-structure (EXAFS) measurements, positron annihilation lifetime spectroscopy (PALS), and cathodoluminescence (CL) spectroscopy, aiming to understand the relationship between defect structures and subgap states. EXAFS measurements reveal the varied oxygen coordination numbers around cations during postannealing and confirm two types of point defects, namely, excess oxygen around Ga atoms and oxygen deficiency around In and/or Zn atoms. PALS suggests the existence of cation-vacancy (VM )-related clusters with neutral or negative charge in both amorphous and polycrystalline IGZO films. CL spectra show a main emission band at approximately 1.85 eV for IGZO films, and a distinct shoulder located at about 2.15 eV for IGZO films postannealed above 600 °C . These two emission bands are assigned to a recombination between the electrons in the conduction band and/or in the shallow donor levels near the conduction band and the acceptors trapped above the valence-band maximum. The shallow donors are attributed to the oxygen deficiency, and the acceptors are thought to possibly arise from the excess oxygen or the VM-related clusters. These results open up an alternative route for understanding the device instability of amorphous IGZO-based thin-film transistors, especially the presence of the neutral or negatively charged VM-related clusters in amorphous IGZO films.

Impacts of Carrier Transport and Deep Level Defects on Delayed Cathodoluminescence in Droop-Mitigating InGaN/GaN LEDs

Energy Technology Data Exchange (ETDEWEB)

Zhao, Zhibo; Singh, Akshay; Chesin, Jordan; Armitage, Rob; Wildeson, Isaac; Deb, Parijat; Armstrong, Andrew; Kisslinger, Kim; Stach, Eric; Gradecak, Silvija

2017-07-25

Prevalent droop mitigation strategies in InGaN-based LEDs require structural and/or compositional changes in the active region but are accompanied by a detrimental reduction in external quantum efficiency (EQE) due to increased Shockley-Read-Hall recombination. Understanding the optoelectronic impacts of structural modifications in InGaN/GaN quantum wells (QW) remains critical for emerging high-power LEDs. In this work, we use a combination of electron microscopy tools along with standard electrical characterization to investigate a wide range of low-droop InGaN/GaN QW designs. We find that chip-scale EQE is uncorrelated with extended well-width fluctuations observed in scanning transmission electron microscopy. Further, we observe delayed cathodoluminescence (CL) response from designs in which calculated band profiles suggest facile carrier escape from individual QWs. Samples with the slowest CL responses also exhibit the lowest EQEs and highest QW defect densities in deep level optical spectroscopy. We propose a model in which the electron beam (i) passivates deep level defect states and (ii) drives charge carrier accumulation and subsequent reduction of the built-in field across the multi-QW active region, resulting in delayed radiative recombination. Finally, we correlate CL rise dynamics with capacitance-voltage measurements and show that certain early-time components of the CL dynamics reflect the open circuit carrier population within one or more QWs.

Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

Science.gov (United States)

Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

2018-04-01

Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC - 2.00 eV, EC - 3.25 eV, and EC - 4.37 eV with concentrations on the order of 1016 cm-3, and a lower concentration level at EC - 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC - 0.1 - 0.2 eV and EC - 0.98 eV. There was no evidence of the commonly observed trap state at ˜EC - 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively "clean" upper part of the bandgap. However, the states at ˜EC - 0.98 eV, EC - 2.00 eV, and EC - 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.

Temperatures of fragment kinetic energy spectra

International Nuclear Information System (INIS)

Bauer, W.

1995-01-01

Multifragmentation reactions without large compression in the initial state (proton-induced reactions, reverse kinematics, projectile fragmentation) are examined, and it is verified quantitatively that the high temperatures obtained from fragment kinetic energy spectra and lower temperatures obtained from observables such as level population or isotope ratios can be understood in a common framework

Tunable zinc interstitial related defects in ZnMgO and ZnCdO films

International Nuclear Information System (INIS)

Li, Wanjun; Qin, Guoping; Fang, Liang; Ye, Lijuan; Wu, Fang; Ruan, Haibo; Zhang, Hong; Kong, Chunyang; Zhang, Ping

2015-01-01

We report tunable band gap of ZnO thin films grown on quartz substrates by radio frequency magnetron sputtering. The zinc interstitial (Zn i ) defects in ZnO films were investigated by X-ray diffraction, Raman scattering, Auger spectra, first-principle calculations, and Hall measurement. Undoped ZnO film exhibits an anomalous Raman mode at 275 cm −1 . We first report that 275 cm −1 mode also can be observed in ZnO films alloyed with Mg and Cd, whose Raman intensities, interestingly, decrease and increase with increasing Mg and Cd alloying content, respectively. Combined with the previous investigations, it is deduced that 275 cm −1 mode is attributed to Zn i related defects, which is demonstrated by our further experiment and theoretical calculation. Consequently, the concentration of Zn i related defects in ZnO can be tuned by alloying Mg and Cd impurity, which gives rise to different conductivity in ZnO films. These investigations help to further understand the controversial origin of the additional Raman mode at 275 cm −1 and also the natural n-type conductivity in ZnO

Tunable zinc interstitial related defects in ZnMgO and ZnCdO films

Energy Technology Data Exchange (ETDEWEB)

Li, Wanjun; Qin, Guoping [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing 401331 (China); Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, Chongqing 401331 (China); Fang, Liang, E-mail: lfang@cqu.edu.cn, E-mail: kchy@163.com; Ye, Lijuan; Wu, Fang [State Key Laboratory of Mechanical Transmission, College of Physics, Chongqing University, Chongqing 401331 (China); Ruan, Haibo [Research Center for Materials Interdisciplinary Sciences, Chongqing University of Arts and Sciences, Chongqing 402160 (China); Zhang, Hong; Kong, Chunyang, E-mail: lfang@cqu.edu.cn, E-mail: kchy@163.com; Zhang, Ping [Key Laboratory of Optoelectronic Functional Materials of Chongqing, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing, Chongqing 401331 (China)

2015-04-14

We report tunable band gap of ZnO thin films grown on quartz substrates by radio frequency magnetron sputtering. The zinc interstitial (Zn{sub i}) defects in ZnO films were investigated by X-ray diffraction, Raman scattering, Auger spectra, first-principle calculations, and Hall measurement. Undoped ZnO film exhibits an anomalous Raman mode at 275 cm{sup −1}. We first report that 275 cm{sup −1} mode also can be observed in ZnO films alloyed with Mg and Cd, whose Raman intensities, interestingly, decrease and increase with increasing Mg and Cd alloying content, respectively. Combined with the previous investigations, it is deduced that 275 cm{sup −1} mode is attributed to Zn{sub i} related defects, which is demonstrated by our further experiment and theoretical calculation. Consequently, the concentration of Zn{sub i} related defects in ZnO can be tuned by alloying Mg and Cd impurity, which gives rise to different conductivity in ZnO films. These investigations help to further understand the controversial origin of the additional Raman mode at 275 cm{sup −1} and also the natural n-type conductivity in ZnO.

Defects in semiconductors

CERN Document Server