Effect of the V{sub As}V{sub Ga} complex defect doping on properties of the semi-insulating GaAs

Energy Technology Data Exchange (ETDEWEB)

Ma, Deming, E-mail: xautmdm@163.com; Qiao, Hongbo; Shi, Wei; Li, Enling [Department of Applied Physics, Xi' an University of Technology, Xi' an 710054 (China)

2014-04-21

The different position V{sub As}V{sub Ga} cluster defect doping in semi-insulating (SI) GaAs has been studied by first-principles calculation based on hybrid density functional theory. Our calculated results show that EL6 level is formed due to the V{sub As}V{sub Ga} complex defect, which is very close to the experimental result. It provides the explanation of the absorption of laser with the wavelength beyond in semi-insulating GaAs. The formation energy of V{sub As}V{sub Ga} complex defect is found to decrease from surface to interior gradually. The conduction band minima and valence band maxima of GaAs (001) surface with the V{sub As}V{sub Ga} complex defect are all located at Γ point, and some defect levels are produced in the forbidden band. In contrast, the conduction band minima and valence band maxima of GaAs with the interior V{sub As}V{sub Ga} complex defect are not located at the same k-point, so it might involve the change of momentum in the electron transition process. The research will help strengthen the understanding of photoelectronic properties and effectively guide the preparation of the SI-GaAs materials.

Dynamics of Defects and Dopants in Complex Systems: Si and Oxide Surfaces and Interfaces

Science.gov (United States)

Kirichenko, Taras; Yu, Decai; Banarjee, Sanjay; Hwang, Gyeong

2004-10-01

Fabrication of forthcoming nanometer scale electronic devices faces many difficulties including formation of extremely shallow and highly doped junctions. At present, ultra-low-energy ion implantation followed by high-temperature thermal annealing is most widely used to fabricate such ultra-shallow junctions. In the process, a great challenge lies in achieving precise control of redistribution and electrical activation of dopant impurities. Native defects (such as vacancies and interstitials) generated during implantation are known to be mainly responsible for the TED and also influence significantly the electrical activation/deactivation. Defect-dopant dynamics is rather well understood in crystalline Si and SiO2. However, little is known about their diffusion and annihilation (or precipitation) at the surfaces and interfaces, despite its growing importance in determining junction profiles as device dimensions get smaller. In this talk, we will present our density functional theory calculation results on the atomic and electronic structure and dynamical behavior of native defects and dopant-defect complexes in disordered/strained Si and oxide systems, such as i) clean and absorbent-modified Si(100) surface and subsurface layers, ii) amorphous-crystalline Si interfaces and iii) amorphous SiO2/Si interfaces. The fundamental understanding and data is essential in developing a comprehensive kinetic model for junction formation, which would contribute greatly in improving current process technologies.

Radiation-induced defect-formation in lithium hydride and deuteride monocrystals. [Electron and X-ray irradiation

Energy Technology Data Exchange (ETDEWEB)

Pustovarov, V.A.; Betenekova, T.A.; Zav' yalov, N.A.; Cholakh, S.O. (Ural' skij Politekhnicheskij Inst., Sverdlovsk (USSR))

1983-08-01

Methods of stationary and pulse absorption spectroscopy were used to investigate into processes of formation and decay of radiation defects in cubic LiH and LiD crystals. F- and V-centers form at low temperatures during crystal irradiation by photons, creating excitons selectively, accelerator electrons, X-ray radiation. Analysis of possible mechanisms of defect formation shows that radiation defect formation in LiH is based on radiationless exciton decay. It is shown that efficiency of F- and V-centers generation in pure and impure crystals in 80-298 K range is the same. Exciton decay with formation of Frenkel radiation defects in pure LiH and LiD crystals takes place, probably, in regular crystal lattice points. Process of radiation defect formation as a result of near activator exciton decay takes place in impure LiH-Na, LiD-Na crystals.

Communication: The electronic entropy of charged defect formation and its impact on thermochemical redox cycles

Science.gov (United States)

Lany, Stephan

2018-02-01

The ideal material for solar thermochemical water splitting, which has yet to be discovered, must satisfy stringent conditions for the free energy of reduction, including, in particular, a sufficiently large positive contribution from the solid-state entropy. By inverting the commonly used relationship between defect formation energy and defect concentration, it is shown here that charged defect formation causes a large electronic entropy contribution manifesting itself as the temperature dependence of the Fermi level. This result is a general feature of charged defect formation and motivates new materials design principles for solar thermochemical hydrogen production.

Graphene defect formation by extreme ultraviolet generated photoelectrons

NARCIS (Netherlands)

Gao, An; Lee, Christopher James; Bijkerk, Frederik

2014-01-01

We have studied the effect of photoelectrons on defect formation in graphene during extreme ultraviolet (EUV) irradiation. Assuming the major role of these low energy electrons, we have mimicked the process by using low energy primary electrons. Graphene is irradiated by an electron beam with energy

Electrical studies of Fe-related defect complexes in silicon

Energy Technology Data Exchange (ETDEWEB)

Tang, Chi Kwong

2012-09-15

and thermal stability, measurements were performed around the projected range of Fe-implantations after rapid thermal annealing. A shallow acceptor is uncovered with an energy level position of EV +0.06 eV and a defect concentration closely following the calculated concentration of the Fe-implantation dose. However, chemical analysis with secondary ion-mass spectrometry shows out-diffusion of Fe from the region around the projected range after annealing. This suggests that the formation of the shallow acceptor is only assisted/promoted by Fe without Fe being a part of the final complex.(Author)

Defect formation in heavily doped Si upon irradiation

International Nuclear Information System (INIS)

Gubskaya, V.I.; Kuchinskii, P.V.; Lomako, V.M.

1981-01-01

The rates of the carrier removal and radiation defect introduction into n- and p-Si in the concentration range of 10 14 to 10 17 cm -3 upon 7-MeV-electron irradiation have been studied. The spectrum of the vacancy-type defects, defining the carrier removal rate in lightly doped crystals has been found. With doping level increase the carrier removal rate grows irrespective of conductivity type, and at n 0 , p 0 > 10 17 cm -3 is close to the total displacement number. At the same time a decrease in the introduction rate of the known vacancy-type defects is observed. x It is shown that a considerable growth of the carrier removal rate is defined neither by introduction of shallow compensating centers, nor by change in the primary defect charge state. It is suggested that at high doping impurity concentrations compensation in Si is due to the introduction of complexes doping impurity-interstitial or (impurity atom-interstitial) + vacancy, which give deep levels. (author)

Chemical stability and defect formation in CaHfO3

KAUST Repository

Alay-E-Abbas, Syed Muhammad

2014-04-01

Defects in CaHfO3 are investigated by ab initio calculations based on density functional theory. Pristine and anion-deficient CaHfO 3 are found to be insulating, whereas cation-deficient CaHfO 3 is hole-doped. The formation energies of neutral and charged cation and anion vacancies are evaluated to determine the stability in different chemical environments. Moreover, the energies of the partial and full Schottky defect reactions are computed. We show that clustering of anion vacancies in the HfO layers is energetically favorable for sufficiently high defect concentrations and results in metallicity. © 2014 EPLA.

Chemical stability and defect formation in CaHfO3

KAUST Repository

Alay-E-Abbas, Syed Muhammad; Nazir, Safdar; Mun Wong, Kin; Shaukat, Ali; Schwingenschlö gl, Udo

2014-01-01

Defects in CaHfO3 are investigated by ab initio calculations based on density functional theory. Pristine and anion-deficient CaHfO 3 are found to be insulating, whereas cation-deficient CaHfO 3 is hole-doped. The formation energies of neutral and charged cation and anion vacancies are evaluated to determine the stability in different chemical environments. Moreover, the energies of the partial and full Schottky defect reactions are computed. We show that clustering of anion vacancies in the HfO layers is energetically favorable for sufficiently high defect concentrations and results in metallicity. © 2014 EPLA.

Defects in dilute nitrides

International Nuclear Information System (INIS)

Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

2005-01-01

We provide a brief review our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As Ga antisites and Ga i self interstitials were positively identified.Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides. (author)

X-ray and optical study on point defect formation and interaction under irradiation adn doping of KCl

Energy Technology Data Exchange (ETDEWEB)

Braude, I S; Rogozyanskaya, L M [AN Ukrainskoj SSR, Kharkov. Fiziko-Tekhnicheskij Inst. Nizkikh Temperatur

1978-08-01

Optical and X-ray diffuse scattering methods have been applied to investigate structural changes, taking place in KCl crystals during irradiation with ..gamma..-quanta and doping with barium. It is shown that ..gamma..-irradiation of ''pure'' and doped KCl crystals mainly leads to formation of F-centers and spherical vacancy complexes. F-center concentration in irradiated addition crystals (3x10/sup -6/) has turned out to be 25% lower, than in irradiated pure ones (4x10/sup -6/), which is connected with interaction of radiation and addition defects. The type of defects, causing assymetry in the distribution of diffuse scattering has been determined. Appearance of scattering ability modulation over direction < 100 > during irradiation of KCl pure crystals has been found. Critical radius of spherical complexes formed during irradiation has been estimated, it appeared to be 2.5 a, where a is a lattice period.

Annealing and cluster formation of defects in a cascade

International Nuclear Information System (INIS)

Martynenko, Yu.V.

1975-01-01

The behaviour of radiative defects after a dynamic cascade of atomic collisions caused by irradiation by neutrons or accelerated heavy ions if theoretically investigated. In investig.ation, apart from processes of vacancy recombination, cluster formation and interstitial atoms the diffusive ''spreading'' of point defects from the initial region is taken into account. Since interstitial atoms are more mobile, all the processes are divided into two stages: at the first stage only interstitial atoms diffuse, and vacancies are stationary; at the second stage vacancies are mobile, and interstitial atoms are either ''spread'' over the whole volume, or are united into stable clusters. The number of defects and clusters is calculated depending on energy of cascade, atomic number of the material and temperature

Defect complexes formed with Ag atoms in CDTE, ZnTe, and ZnSe

CERN Document Server

Wolf, H; Ostheimer, V; Hamann, J; Lany, S; Wichert, T

2000-01-01

Using the radioactive acceptor $^{111}\\!$Ag for perturbed $\\gamma$-$\\gamma$-angular correlation (PAC) spectroscopy for the first time, defect complexes formed with Ag are investigated in the II-VI semiconductors CdTe, ZnTe and ZnSe. The donors In, Br and the Te-vacancy were found to passivate Ag acceptors in CdTe via pair formation, which was also observed in In-doped ZnTe. In undoped or Sb-doped CdTe and in undoped ZnSe, the PAC experiments indicate the compensation of Ag acceptors by the formation of double broken bond centres, which are characterised by an electric field gradient with an asymmetry parameter close to h = 1. Additionally, a very large electric field gradient was observed in CdTe, which is possibly connected with residual impurities.

Defects formation and spiral waves in a network of neurons in presence of electromagnetic induction.

Science.gov (United States)

Rostami, Zahra; Jafari, Sajad

2018-04-01

Complex anatomical and physiological structure of an excitable tissue (e.g., cardiac tissue) in the body can represent different electrical activities through normal or abnormal behavior. Abnormalities of the excitable tissue coming from different biological reasons can lead to formation of some defects. Such defects can cause some successive waves that may end up to some additional reorganizing beating behaviors like spiral waves or target waves. In this study, formation of defects and the resulting emitted waves in an excitable tissue are investigated. We have considered a square array network of neurons with nearest-neighbor connections to describe the excitable tissue. Fundamentally, electrophysiological properties of ion currents in the body are responsible for exhibition of electrical spatiotemporal patterns. More precisely, fluctuation of accumulated ions inside and outside of cell causes variable electrical and magnetic field. Considering undeniable mutual effects of electrical field and magnetic field, we have proposed the new Hindmarsh-Rose (HR) neuronal model for the local dynamics of each individual neuron in the network. In this new neuronal model, the influence of magnetic flow on membrane potential is defined. This improved model holds more bifurcation parameters. Moreover, the dynamical behavior of the tissue is investigated in different states of quiescent, spiking, bursting and even chaotic state. The resulting spatiotemporal patterns are represented and the time series of some sampled neurons are displayed, as well.

Defect complexes in carbon and boron nitride nanotubes

CSIR Research Space (South Africa)

Mashapa, MG

2012-05-01

Full Text Available The effect of defect complexes on the stability, structural and electronic properties of single-walled carbon nanotubes and boron nitride nanotubes is investigated using the ab initio pseudopotential density functional method implemented...

Selection and Characterization of Palmitic Acid Responsive Patients with an OXPHOS Complex I Defect

Directory of Open Access Journals (Sweden)

Tom E. J. Theunissen

2017-10-01

Full Text Available Mitochondrial disorders are genetically and clinically heterogeneous, mainly affecting high energy-demanding organs due to impaired oxidative phosphorylation (OXPHOS. Currently, effective treatments for OXPHOS defects, with complex I deficiency being the most prevalent, are not available. Yet, clinical practice has shown that some complex I deficient patients benefit from a high-fat or ketogenic diet, but it is unclear how these therapeutic diets influence mitochondrial function and more importantly, which complex I patients could benefit from such treatment. Dietary studies in a complex I deficient patient with exercise intolerance showed increased muscle endurance on a high-fat diet compared to a high-carbohydrate diet. We performed whole-exome sequencing to characterize the genetic defect. A pathogenic homozygous p.G212V missense mutation was identified in the TMEM126B gene, encoding an early assembly factor of complex I. A complementation study in fibroblasts confirmed that the p.G212V mutation caused the complex I deficiency. The mechanism turned out to be an incomplete assembly of the peripheral arm of complex I, leading to a decrease in the amount of mature complex I. The patient clinically improved on a high-fat diet, which was supported by the 25% increase in maximal OXPHOS capacity in TMEM126B defective fibroblast by the saturated fatty acid palmitic acid, whereas oleic acid did not have any effect in those fibroblasts. Fibroblasts of other patients with a characterized complex I gene defect were tested in the same way. Patient fibroblasts with complex I defects in NDUFS7 and NDUFAF5 responded to palmitic acid, whereas ACAD9, NDUFA12, and NDUFV2 defects were non-responding. Although the data are too limited to draw a definite conclusion on the mechanism, there is a tendency that protein defects involved in early assembly complexes, improve with palmitic acid, whereas proteins defects involved in late assembly, do not. Our data show at

Defect formation energy for charge states of CdMnTe

International Nuclear Information System (INIS)

Mehrabova, M.A.; Orujov, H.S.; Hasanli, R.N.

2014-01-01

Full text : Cd 1 -xMn x Te semimagnetic semiconductors are promising materials for X-ray and gamma-detectors, solar cells, optic insulators and etc. For obtaining high-sensitive and radiation-resistant materials, as well as creation of devices based on them it is necessary to know the mechanism of defect formation in semimagnetic conductors. Defects in semiconductors not only influence on electrical and optic properties of these materials, but also display their interesting physical properties

Evaluation of Dentin Defect Formation during Retreatment with Hand and Rotary Instruments: A Micro-CT Study.

Science.gov (United States)

Yilmaz, Ayca; Helvacioglu-Yigit, Dilek; Gur, Cansu; Ersev, Handan; Kiziltas Sendur, Gullu; Avcu, Egemen; Baydemir, Canan; Abbott, Paul Vincent

2017-01-01

The purpose of this study was to compare the incidence and longitudinal propagation of dentin defects after gutta-percha removal with hand and rotary instruments using microcomputed tomography. Twenty mandibular incisors were prepared using the balanced-force technique and scanned in a 19.9  μ m resolution. Following filling with the lateral compaction technique, gutta-percha was removed with ProTaper Universal Retreatment (PTUR) or hand instruments. After rescanning, a total of 24,120 cross-sectional images were analyzed. The numbers, types, and longitudinal length changes of defects were recorded. Defects were observed in 36.90% of the cross sections. A total of 73 defects were comprised of 87.67% craze lines, 2.73% partial cracks, and 9.58% fractures. No significant difference in terms of new defect formation was detected between the retreatment groups. The apical and middle portions of the roots had more dentin defects than the coronal portions. Defects in three roots of the PTUR instrument group increased in length. Under the conditions of this in vitro study, gutta-percha removal seemed to not increase the incidence of dentin defect formation, but the longitudinal defect propagation finding suggests possible cumulative dentinal damage due to additional endodontic procedures. Hand and rotary instrumentation techniques caused similar dentin defect formation during root canal retreatment.

Peculiarities of radiation defect formation and annealing in n-Si due to their interaction with each other and defect clusters

International Nuclear Information System (INIS)

Lugakov, P.F.; Lukyanitsa, V.V.

1984-01-01

Rearrangement processes proceeding during annealing (T/sub a/ = 50 to 500 0 C) of radiation defects in 60 Co γ-irradiated (T/sub irr/ 0 C) n-Si crystals (rho = 100 to 600 Ωcm) grown by the vacuum float-zone technique are studied. The temperature dependences of the Hall coefficient are measured. The results obtained are interpreted taking into account the interaction during annealing of vacancy-type defects (E-centres, divacancies) with each other and interstitial radiation defects (C/sub i/-C/sub s/ complexes, interstitial carbon C/sub i/). Phosphorus-two vacancies complexes, stable to T/sub a/ >= 500 0 C, are shown to be formed as a result of rearrangements and interaction of E-centres between themselves. The character of interaction of vacancy defects with interstitial ones is found to change significantly in the presence of defect clusters in the bulk of the crystal which are formed under heat treatment (T = 800 0 C, two hours) of the samples preliminary irradiated with fast neutrons (flux PHI/sub n/ = 1x10 14 to 1x10 16 cm -2 ). The peculiarities of radiation defects annealing observed in this case are explained taking into account the influence of defect clusters on the migration processes of mobile defects. Nature of radiation defects being formed at various stages of annealing is discussed. (author)

Combined computational and experimental study of Ar beam induced defect formation in graphite

International Nuclear Information System (INIS)

Pregler, Sharon K.; Hayakawa, Tetsuichiro; Yasumatsu, Hisato; Kondow, Tamotsu; Sinnott, Susan B.

2007-01-01

Irradiation of graphite, commonly used in nuclear power plants, is known to produce structural damage. Here, experimental and computational methods are used to study defect formation in graphite during Ar irradiation at incident energies of 50 eV. The experimental samples are analyzed with scanning tunneling microscopy to quantify the size distribution of the defects that form. The computational approach is classical molecular dynamic simulations that illustrate the mechanisms by which the defects are produced. The results indicate that defects in graphite grow in concentrated areas and are nucleated by the presence of existing defects

Characterisation and modelling of defect formation in direct-chill cast AZ80 alloy

Energy Technology Data Exchange (ETDEWEB)

Mackie, D.; Robson, J.D.; Withers, P.J. [School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Turski, M. [Magnesium Elektron UK, Rake Lane, Manchester, M27 8BF (United Kingdom)

2015-06-15

Wrought magnesium alloys for demanding structural applications require high quality defect free cast feedstock. The aim of this study was to first identify and characterise typical defects in direct chill cast magnesium–aluminium–zinc (AZ) alloy billet and then use modelling to understand the origins of these defects so they can be prevented. Defects were first located using ultrasonic inspection and were then characterised using X-ray computed tomography (XCT) and serial sectioning, establishing the presence of oxide films and intermetallic particles Al{sub 8}Mn{sub 5} in all defects. A model was developed to predict the flow patterns and growth kinetics of the intermetallic phases during casting, which influence the formation of defects. Simulation of the growth of the intermetallic particles demonstrated that precipitation from the liquid occurs in the mould. The combination of the entrained oxide films and intermetallic particles recirculates in the liquid metal and continues to grow, until large enough to settle, which is predicted to occur at the centre of the mould where the flow is the slowest. Based on these predictions, strategies to reduce the susceptibility to defect formation are suggested. - Highlights: • Casting defects in magnesium direct chill casting have been imaged and characterised in 3-dimensions. • The occurrences of co-located clusters of particles and oxide films have been characterised and explained. • A coupled model has been developed to help interpret the observed trend for defects located towards the centre of billets.

Characterisation and modelling of defect formation in direct-chill cast AZ80 alloy

International Nuclear Information System (INIS)

Mackie, D.; Robson, J.D.; Withers, P.J.; Turski, M.

2015-01-01

Wrought magnesium alloys for demanding structural applications require high quality defect free cast feedstock. The aim of this study was to first identify and characterise typical defects in direct chill cast magnesium–aluminium–zinc (AZ) alloy billet and then use modelling to understand the origins of these defects so they can be prevented. Defects were first located using ultrasonic inspection and were then characterised using X-ray computed tomography (XCT) and serial sectioning, establishing the presence of oxide films and intermetallic particles Al 8 Mn 5 in all defects. A model was developed to predict the flow patterns and growth kinetics of the intermetallic phases during casting, which influence the formation of defects. Simulation of the growth of the intermetallic particles demonstrated that precipitation from the liquid occurs in the mould. The combination of the entrained oxide films and intermetallic particles recirculates in the liquid metal and continues to grow, until large enough to settle, which is predicted to occur at the centre of the mould where the flow is the slowest. Based on these predictions, strategies to reduce the susceptibility to defect formation are suggested. - Highlights: • Casting defects in magnesium direct chill casting have been imaged and characterised in 3-dimensions. • The occurrences of co-located clusters of particles and oxide films have been characterised and explained. • A coupled model has been developed to help interpret the observed trend for defects located towards the centre of billets

Combined Respiratory Chain Deficiency and UQCC2 Mutations in Neonatal Encephalomyopathy: Defective Supercomplex Assembly in Complex III Deficiencies

Directory of Open Access Journals (Sweden)

René G. Feichtinger

2017-01-01

Full Text Available Vertebrate respiratory chain complex III consists of eleven subunits. Mutations in five subunits either mitochondrial (MT-CYB or nuclear (CYC1, UQCRC2, UQCRB, and UQCRQ encoded have been reported. Defects in five further factors for assembly (TTC19, UQCC2, and UQCC3 or iron-sulphur cluster loading (BCS1L and LYRM7 cause complex III deficiency. Here, we report a second patient with UQCC2 deficiency. This girl was born prematurely; pregnancy was complicated by intrauterine growth retardation and oligohydramnios. She presented with respiratory distress syndrome, developed epileptic seizures progressing to status epilepticus, and died at day 33. She had profound lactic acidosis and elevated urinary pyruvate. Exome sequencing revealed two homozygous missense variants in UQCC2, leading to a severe reduction of UQCC2 protein. Deficiency of complexes I and III was found enzymatically and on the protein level. A review of the literature on genetically distinct complex III defects revealed that, except TTC19 deficiency, the biochemical pattern was very often a combined respiratory chain deficiency. Besides complex III, typically, complex I was decreased, in some cases complex IV. In accordance with previous observations, the presence of assembled complex III is required for the stability or assembly of complexes I and IV, which might be related to respirasome/supercomplex formation.

Defect pair formation in fluorine and nitrogen codoped TiO2

Science.gov (United States)

Kordatos, A.; Kelaidis, N.; Chroneos, A.

2018-04-01

Titanium oxide is extensively investigated because of its high chemical stability and its photocatalytic properties; nevertheless, the large band gap limits its activity to a small portion of the solar spectrum. Nitrogen and fluorine codoping is an efficient defect engineering strategy to increase the photocatalytic activity of titanium oxide. In the present study, we apply density functional theory to investigate the interaction of nitrogen with fluorine and the formation of defect pairs. We show that in fluorine and nitrogen codoped titanium oxide, the FiNi, FONi, and FiNTi defects can form. Their impact on the electronic structure of titanium oxide is discussed.

Evaluation of Dentin Defect Formation during Retreatment with Hand and Rotary Instruments: A Micro-CT Study

Directory of Open Access Journals (Sweden)

Ayca Yilmaz

2017-01-01

Full Text Available The purpose of this study was to compare the incidence and longitudinal propagation of dentin defects after gutta-percha removal with hand and rotary instruments using microcomputed tomography. Twenty mandibular incisors were prepared using the balanced-force technique and scanned in a 19.9 μm resolution. Following filling with the lateral compaction technique, gutta-percha was removed with ProTaper Universal Retreatment (PTUR or hand instruments. After rescanning, a total of 24,120 cross-sectional images were analyzed. The numbers, types, and longitudinal length changes of defects were recorded. Defects were observed in 36.90% of the cross sections. A total of 73 defects were comprised of 87.67% craze lines, 2.73% partial cracks, and 9.58% fractures. No significant difference in terms of new defect formation was detected between the retreatment groups. The apical and middle portions of the roots had more dentin defects than the coronal portions. Defects in three roots of the PTUR instrument group increased in length. Under the conditions of this in vitro study, gutta-percha removal seemed to not increase the incidence of dentin defect formation, but the longitudinal defect propagation finding suggests possible cumulative dentinal damage due to additional endodontic procedures. Hand and rotary instrumentation techniques caused similar dentin defect formation during root canal retreatment.

Formation of social and household skills in children with hand defects.

Science.gov (United States)

Klimon, Nataly; Koryukov, Alexander; Loseva, Nina; Starobina, Elena

2015-08-01

The aim of this study was to consider the peculiarities of forming social and household skills, and the criteria for their evaluation, as well as an assessment of functional capacity, in children with hand defects both before and after surgical treatment and rehabilitation courses using a system of games. We elaborated and implemented a program of social rehabilitation of preschool children with congenital and acquired hand defects for the development of their functional capabilities and the formation of social and household skills after surgical treatment and prosthetics using play therapy methods. As part of this work, 140 preschool children aged 3-7 years underwent social rehabilitation. Most of the children had congenital hand defects-122 children (87 %): 96 children (79 %) with ectrodactylia, adactylia, hypoplasia, aplasia, hand splitting, club hand, or partial gigantism; 26 children (21 %) with congenital syndactylism and constricted bonds and 18 children (13 %) with acquired defects (burn deformity, amputation). 110 children (79 %) had reached the stage of surgical correction; 30 children (21 %) reached the stage of prosthetics. Most of the children participating in the experiment (78 children, 56 %) had defects of fingers on one hand. The program aimed at solving specific rehabilitation tasks: formation and improvement of all possible types of grip under the existing defect including those after surgery and prosthetics; development of tactile sensations in fingers; development of fine motor skills; increase in range of motion in all joints of the damaged hand; development of attention and concentration; formation of social and household skills appropriate to age; and development of the ability to achieve the set task. Analysis of the level of social and household skills of children with hand defects undergoing rehabilitation treatment at the hospital depending on the age prior to medical and social rehabilitation showed that preschool children with

Defective pairing and synaptonemal complex formation in a Sordaria mutant (spo44) with a translocated segment of the nucleolar organizer.

Science.gov (United States)

Zickler, D; de Lares, L; Moreau, P J; Leblon, G

1985-01-01

The recessive meiotic mutant spo44 of Sordaria macrospora, with 90% ascospore abortion, exhibits striking effects on recombination (67% decrease), irregular segregation of the almost unpaired homologues, and a decrease in chiasma frequency in the few cases where bivalents are formed. Three-dimensional reconstructions of ten prophase nuclei indicate that pairing, as judged by the absence of fully formed synaptonemal complexes (SC), is not achieved although lateral elements (LE) assemble. The pairing failure is attributable to defects in the alignment of homologous chromosomes. The leptotene alignment seen in the wild type before SC formation was not observed in the spo44 nuclei. Dense material, considered to be precursor of SC central elements, was found scattered among the LE in two nuclei. The behaviour of spo44 substantiates the hypothesis that chromosome matching and SC formation are separable events. - The total length of the LE in the mutant is the same as in the wild type, but due to variable numbers and length of the individual LE, homologues cannot be lined up. Light microscopic observations indicate that the irregular length and number of LE is due to extensive chromosome breakage. The wild-type function corresponding to spo44 is required for both LE integrity and chromosome matching. Reconstructions of heterozygous nuclei reveal the presence of a supernumerary nucleolar organizer in one arm of chromosome 7. It is suggested that rDNA has been inserted into a gene whose function is involved in pairing or into a controlling sequence that interacts with the pairing process.

CoFFEE: Corrections For Formation Energy and Eigenvalues for charged defect simulations

Science.gov (United States)

Naik, Mit H.; Jain, Manish

2018-05-01

Charged point defects in materials are widely studied using Density Functional Theory (DFT) packages with periodic boundary conditions. The formation energy and defect level computed from these simulations need to be corrected to remove the contributions from the spurious long-range interaction between the defect and its periodic images. To this effect, the CoFFEE code implements the Freysoldt-Neugebauer-Van de Walle (FNV) correction scheme. The corrections can be applied to charged defects in a complete range of material shapes and size: bulk, slab (or two-dimensional), wires and nanoribbons. The code is written in Python and features MPI parallelization and optimizations using the Cython package for slow steps.

Features of transformation of impurity-defect complexes in СdTe:Сl under the influence of microwave radiation

Directory of Open Access Journals (Sweden)

Budzulyak S. I.

2014-08-01

Full Text Available High-resistance cadmium telluride single crystals are promising material for production of ionizing radiation detectors. To increase crystal resistance, they are doped with chlorine. The detector quality depends on uniformity of chlorine impurity distribution over crystal. It is known that low-dose microwave irradiation can homogenize impurity distribution in a specimen. In the present work, we made an attempt to improve the detector material quality by using such post-technological treatment, as well as to study state variation for impurity-defect complexes. To this end, the effect of microwave irradiation on transformation of impurity-defect complexes in CdTe:Cl single crystals was investigated using low-temperature photoluminescence. It is shown that activation of ClTe donor centers by microwave irradiation for 10 s and presence of VCd acceptor centers in the specimens under investigation effectively facilitate formation of (VNd–ClTe defect centers at which excitons are bound. Detailed investigations of the band form for donor-acceptor pairs (DAPs in CdTe:Cl single crystals made it possible to determine the Huang—Rhys factor (that characterizes electron-phonon interaction in CdTe:Cl DAPs as a function of microwave treatment duration. It is shown for single crystals with NCl = 5·1017 cm–3 and 5·1019 cm–3 that the Huang—Rhys factor grows with microwave irradiation dose. This is related to both homogenization of donor and acceptor centers distribution and increase of donor—acceptor spacing. It is shown that microwave irradiation of CdTe:Cl single crystals results in concentration reduction for separate cadmium vacancies VCd because of formation of (VNd—ClTe defect centers at which excitons are bound.

Stringy models of modified gravity: space-time defects and structure formation

International Nuclear Information System (INIS)

Mavromatos, Nick E.; Sakellariadou, Mairi; Yusaf, Muhammad Furqaan

2013-01-01

Starting from microscopic models of space-time foam, based on brane universes propagating in bulk space-times populated by D0-brane defects (''D-particles''), we arrive at effective actions used by a low-energy observer on the brane world to describe his/her observations of the Universe. These actions include, apart from the metric tensor field, also scalar (dilaton) and vector fields, the latter describing the interactions of low-energy matter on the brane world with the recoiling point-like space-time defect (D-particle). The vector field is proportional to the recoil velocity of the D-particle and as such it satisfies a certain constraint. The vector breaks locally Lorentz invariance, which however is assumed to be conserved on average in a space-time foam situation, involving the interaction of matter with populations of D-particle defects. In this paper we clarify the role of fluctuations of the vector field on structure formation and galactic growth. In particular we demonstrate that, already at the end of the radiation era, the (constrained) vector field associated with the recoil of the defects provides the seeds for a growing mode in the evolution of the Universe. Such a growing mode survives during the matter dominated era, provided the variance of the D-particle recoil velocities on the brane is larger than a critical value. We note that in this model, as a result of specific properties of D-brane dynamics in the bulk, there is no issue of overclosing the brane Universe for large defect densities. Thus, in these models, the presence of defects may be associated with large-structure formation. Although our string inspired models do have (conventional, from a particle physics point of view) dark matter components, nevertheless it is interesting that the role of ''extra'' dark matter is also provided by the population of massive defects. This is consistent with the weakly interacting character of the D-particle defects, which predominantly interact only

Influence of rare earth elements on radiation defect formation in silicon

International Nuclear Information System (INIS)

Nazyrov, D.E.

2006-01-01

Full text: It is known that efficiency of form and kinetics annealing of radiation defects influence greatly presence of initial in controlling electrically active or inactive impurities, their concentration and position in a lattice of a semiconductor. From this point of view of impurities of group of rare earths elements (REE) are of great interest, they interact with primary radiation defects creating electrically passive complexes such as . Thus they increase radiation stability of silicon. The purpose of the given work was the investigation of effect of irradiation by γ-quanta 60 Co properties of silicon doped REE-by samarium, gadolinium and erbium. The doping of silicon was carried out by growth process. Concentration of REE - samarium, gadolinium and erbium in silicon according to neutron-activation analysis equaled 10 14 /5·10 18 cm 2 . Silicon doped by phosphorus - 15/50 Ωcm were used as control samples. The results of investigations were obtained from DLTS (deep level transient spectroscopy) measurements, Hall effect and electrical measurements on definition of a resistivity, lifetime of minority carriers of a charge and optically active of concentrations of oxygen and carbon. The optical recharge by the infrared light emitting diode (P=10 mV, λ=0,95 μm) was used for investigation of deep levels (DL) situated in lower half of band gap. In control samples irradiated by the γ-quanta 60 Co with a dose 10 16 / 5·10 18 cm -2 formation DL was found in band, the parameters of which are well-known: A-, E-centers etc. Depending on a dose of an effect of irradiate in an energy spectrum of radiation defects in Si of essential changes, except for concentration is not observed. The deep levels concentration the E c -0,17 eV and E c -0,4 eV in Si is essentially reduced with respect control samples. The comparison the dose of associations of observable levels in irradiated n-Si with similar associations in control samples shows, that a velocity of introduction

Ab initio study of metastability of Eu{sup 3+} defect complexes in GaN

Energy Technology Data Exchange (ETDEWEB)

Ouma, Cecil N.M., E-mail: Cecil.Ouma@up.ac.za; Meyer, Walter E.

2014-04-15

Density functional theory (DFT) within the generalized gradient approximation (GGA) has been used to study the structural and electronic properties of Eu{sup 3+} defect complexes in GaN under Ga-rich conditions. Two distinct configurations of the Eu{sub Ga}V{sub N} defect complex, the axial and basal configuration, have been investigated. We report two forms of metastable defects namely; the Negative U defect in the lower half of the GaN band-gap and a metastable defect with two distinct configurations each with levels at E{sub C} −0.46 eV and −0.56 eV in the upper half of the GaN band-gap.

Formation of Defect-Free Latex Films on Porous Fiber Supports

KAUST Repository

Lively, Ryan P.

2011-09-28

We present here the creation of a defect-free polyvinylidene chloride barrier layer on the lumen-side of a hollow fiber sorbent. Hollow fiber sorbents have previously been shown to be promising materials for enabling low-cost CO 2 capture, provided a defect-free lumen-side barrier layer can be created. Film experiments examined the effect of drying rate, latex age, substrate porosity (porous vs nonporous), and substrate hydrophobicity/ hydrophilicity. Film studies show that in ideal conditions (i.e., slow drying, fresh latex, and smooth nonporous substrate), a defect-free film can be formed, whereas the other permutations of the variables investigated led to defective films. These results were extended to hollow fiber sorbents, and despite using fresh latex and relatively slow drying conditions, a defective lumen-side layer resulted. XRD and DSC indicate that polyvinylidene chloride latex develops crystallinity over time, thereby inhibiting proper film formation as confirmed by SEM and gas permeation. This and other key additional challenges associated with the porous hollow fiber substrate vs the nonporous flat substrate were overcome. By employing a toluene-vapor saturated drying gas (a swelling solvent for polyvinylidene chloride) a defect-free lumen-side barrier layer was created, as investigated by gas and water vapor permeation. © 2011 American Chemical Society.

Recombination-induced formation of hydrogen-defect complexes in 4H and 6H-SiC: electrical and optical characterization

International Nuclear Information System (INIS)

Koshka, Y.; Los, A.; Mazzola, M.S.; Sankin, I.

2003-01-01

The phenomenon of recombination-induced passivation of defects with hydrogen was investigated in SiC polytypes. Excitation of the hydrogenated samples with above-band gap light at low temperatures resulted in formation of different non-metastable hydrogen-related luminescence centres. Electrical measurements revealed strong recombination-induced passivation of electrical activity of aluminium and boron acceptors in p-type SiC epilayers, which in some cases resulted in inversion of the conductivity type. Athermal migration of hydrogen is considered as a possible mechanism for the observed phenomena

Rapid screening for nuclear genes mutations in isolated respiratory chain complex I defects.

Science.gov (United States)

Pagniez-Mammeri, Hélène; Lombes, Anne; Brivet, Michèle; Ogier-de Baulny, Hélène; Landrieu, Pierre; Legrand, Alain; Slama, Abdelhamid

2009-04-01

Complex I or reduced nicotinamide adenine dinucleotide (NADH): ubiquinone oxydoreductase deficiency is the most common cause of respiratory chain defects. Molecular bases of complex I deficiencies are rarely identified because of the dual genetic origin of this multi-enzymatic complex (nuclear DNA and mitochondrial DNA) and the lack of phenotype-genotype correlation. We used a rapid method to screen patients with isolated complex I deficiencies for nuclear genes mutations by Surveyor nuclease digestion of cDNAs. Eight complex I nuclear genes, among the most frequently mutated (NDUFS1, NDUFS2, NDUFS3, NDUFS4, NDUFS7, NDUFS8, NDUFV1 and NDUFV2), were studied in 22 cDNA fragments spanning their coding sequences in 8 patients with a biochemically proved complex I deficiency. Single nucleotide polymorphisms and missense mutations were detected in 18.7% of the cDNA fragments by Surveyor nuclease treatment. Molecular defects were detected in 3 patients. Surveyor nuclease screening is a reliable method for genotyping nuclear complex I deficiencies, easy to interpret, and limits the number of sequence reactions. Its use will enhance the possibility of prenatal diagnosis and help us for a better understanding of complex I molecular defects.

Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

International Nuclear Information System (INIS)

Walukiewicz, W.

1988-02-01

The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

Formation Mechanisms for Entry and Exit Defects in Bobbin Friction Stir Welding

Directory of Open Access Journals (Sweden)

Abbas Tamadon

2018-01-01

Full Text Available Bobbin friction stir welding (BFSW is an innovative variant for the solid state welding process whereby a rotating symmetrical tool causes a fully penetrated bond. Despite the process development, there are still unknown variables in the characterization of the process parameters which can cause uncontrolled weld defects. The entry zone and the exit zone consist of two discontinuity-defects and removing them is one of the current challenges for improving the weld quality. In the present research, the characteristic features of the entry and exit defects in the weld structure and formation mechanism of them during the BFSW processing was investigated. Using stacked layers of multi-colour plasticine the material flow, analogous to metal flow, can be visualised. By using different colours as the path markers of the analogue model, the streamline flow can be easily delineated in the discontinuity defects compared with the metal welds. AA6082-T6 aluminium plates and multi-layered plasticine slabs were employed to replicate the entry-exit defects in the metal weld and analogue samples. The fixed-bobbin tool utilized for this research was optimized by adding a thread feature and tri-flat geometry to the pin and closed-end spiral scrolls on both shoulder surfaces. Samples were processed at different rotating and longitudinal speeds to show the degree of dependency on the welding parameters for the defects. The analogue models showed that the entry zone and the exit zone of the BFSW are affected by the inhomogeneity of the material flow regime which causes the ejection or disruption of the plastic flow in the gap between the bobbin shoulders. The trial aluminium welds showed that the elimination of entry-exit defects in the weld body is not completely possible but the size of the defects can be minimized by modification of the welding parameters. For the entry zone, the flow pattern evolution suggested formation mechanisms for a sprayed tail, island zone

Study of new complexes of uranium and comba radical. I.- Complexes defective in sodium carbonate

International Nuclear Information System (INIS)

Vera Palomino, J.; Galiano Sedano, J. A.; Parellada Bellod, R.; Bellido Gonzalez, A.

1975-01-01

Some complexes formed in presence of defect of sodium carbonate with respect to the stoichiometric ratio (U): (C0 3 ) = 1:3 are studied. This ratio corresponds to the main complex which is responsible for the uranium extraction with CDMBAC organic solutions and from U(VI) aqueous solutions with an excess of sodium carbonate. (Author) 10 refs

Energetics of intrinsic point defects in uranium dioxide from electronic-structure calculations

International Nuclear Information System (INIS)

Nerikar, Pankaj; Watanabe, Taku; Tulenko, James S.; Phillpot, Simon R.; Sinnott, Susan B.

2009-01-01

The stability range of intrinsic point defects in uranium dioxide is determined as a function of temperature, oxygen partial pressure, and non-stoichiometry. The computational approach integrates high accuracy ab initio electronic-structure calculations and thermodynamic analysis supported by experimental data. In particular, the density functional theory calculations are performed at the level of the spin polarized, generalized gradient approximation and includes the Hubbard U term; as a result they predict the correct anti-ferromagnetic insulating ground state of uranium oxide. The thermodynamic calculations enable the effects of system temperature and partial pressure of oxygen on defect formation energy to be determined. The predicted equilibrium properties and defect formation energies for neutral defect complexes match trends in the experimental literature quite well. In contrast, the predicted values for charged complexes are lower than the measured values. The calculations predict that the formation of oxygen interstitials becomes increasingly difficult as higher temperatures and reducing conditions are approached

Clustering of cosmological defects at the time of formation

International Nuclear Information System (INIS)

Leese, R.; Prokopec, T.

1991-01-01

A simple model for the formation of global monopoles is considered. It is shown that they naturally form in clusters, with monopoles adjacent to antimonopoles, and vice-versa. The strong attraction between pole and antipole causes the clusters to collapse very rapidly, leading to the annihilation of most (62% in our model) of the original defects within a time τ, where τ is of the order of the correlation length. (orig.)

The formation of super-dislocation/micropipe complexes in 6H-SiC

Energy Technology Data Exchange (ETDEWEB)

Giocondi, J.; Rohrer, G.S.; Skowronski, M. [Carnegie Mellon Univ., Pittsburgh, PA (United States). Dept. of Materials Science and Engineering; Balakrishna, V.; Augustine, G.; Hobgood, H.McD.; Hopkins, R.H. [Northrop Grumman Science and Technology Center, Pittsburgh PA (United States)

1998-06-01

Atomic force microscope images of surface/micropipe intersections on the (0001) growth surface of a 6H-SiC single crystal grown by the physical vapor transport method indicate that micropipes are associated with super-dislocations and that micron-scale deposits of a heterogeneous phase are frequently found in the vicinity of the defect. Based on our observations, we propose a model for the formation of super-dislocation/micropipe complexes that involves the coalescence of unit screw dislocations. The unit dislocations are forced together as large steps grow around heterogeneous material on the surface. (orig.) 5 refs.

Formation of defect-free 6FDA-DAM asymmetric hollow fiber membranes for gas separations

KAUST Repository

Xu, Liren

2014-06-01

This paper reports the formation of defect-free 6FDA-DAM asymmetric hollow fiber membranes. 6FDA-polyimides are of great interest for advanced gas separation membranes, and 6FDA-DAM polyimide is a representative polymer in this family with attractive dense film properties for several potential applications. The work reported here for the 6FDA-DAM polyimide provides insight for the challenging fabrication of defect-free asymmetric hollow fiber membranes for this class of 6FDA-polyimides, which behave rather different from lower free volume polymers. Specifically, the 6FDA based materials show relatively slow phase separation rate in water quench baths, which presents a challenge for fiber spinning. For convenience, we refer to the behavior as more "non-solvent resistant" in comparison to other lower free volume polymers, since the binodal phase boundary is displaced further from the conventional position near the pure polymer-solvent axis on a ternary phase diagram in conventional polymers like Matrimid® and Ultem®. The addition of lithium nitrate to promote phase separation has a useful impact on 6FDA-DAM asymmetric hollow fiber formation. 6FDA-DAM phase diagrams using ethanol and water as non-solvent are reported, and it was found that water is less desirable as a non-solvent dope additive for defect-free fiber spinning. Phase diagrams are also reported for 6FDA-DAM dope formulation with and without the addition of lithium nitrate, and defect-free asymmetric hollow fiber membranes are reported for both cases. The effect of polymer molecular weight on defect-free fiber spinning was also investigated. Gas transport properties and morphology of hollow fibers were characterized. With several thorough case studies, this work provides a systematic guideline for defect-free fiber formation from 6FDA-polymers. © 2014 Elsevier B.V.

Vacancy complexes induce long-range ferromagnetism in GaN

KAUST Repository

Zhang, Zhenkui

2014-11-14

By means of density functional theory, we argue that ferromagnetism in GaN can be induced by vacancy complexes. Spin polarization originates from the charge compensation between neutral N and Ga vacancies. Defect formation energy calculations predict that a vacancy complex of two positively charged N vacancies and one doubly negative Ga vacancy is likely to form. This defect complex induces a net moment of 1 μB, which is localized around the negative Ga center and exhibits pronounced in-plane ferromagnetic coupling. In contrast to simple Ga vacancy induced ferromagnetism, the proposed picture is in line with the fact that N vacancies have a low formation energy. Formation energies indicate mutual stabilization of the intrinsic defects in GaN.

Vacancy complexes induce long-range ferromagnetism in GaN

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zhenkui; Schwingenschlögl, Udo, E-mail: Udo.Schwingenschlogl@kaust.edu.sa, E-mail: Iman.Roqan@kaust.edu.sa; Roqan, Iman S., E-mail: Udo.Schwingenschlogl@kaust.edu.sa, E-mail: Iman.Roqan@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)

2014-11-14

By means of density functional theory, we argue that ferromagnetism in GaN can be induced by vacancy complexes. Spin polarization originates from the charge compensation between neutral N and Ga vacancies. Defect formation energy calculations predict that a vacancy complex of two positively charged N vacancies and one doubly negative Ga vacancy is likely to form. This defect complex induces a net moment of 1 μ{sub B}, which is localized around the negative Ga center and exhibits pronounced in-plane ferromagnetic coupling. In contrast to simple Ga vacancy induced ferromagnetism, the proposed picture is in line with the fact that N vacancies have a low formation energy. Formation energies indicate mutual stabilization of the intrinsic defects in GaN.

Vacancy complexes induce long-range ferromagnetism in GaN

KAUST Repository

Zhang, Zhenkui; Schwingenschlö gl, Udo; Roqan, Iman S.

2014-01-01

By means of density functional theory, we argue that ferromagnetism in GaN can be induced by vacancy complexes. Spin polarization originates from the charge compensation between neutral N and Ga vacancies. Defect formation energy calculations predict that a vacancy complex of two positively charged N vacancies and one doubly negative Ga vacancy is likely to form. This defect complex induces a net moment of 1 μB, which is localized around the negative Ga center and exhibits pronounced in-plane ferromagnetic coupling. In contrast to simple Ga vacancy induced ferromagnetism, the proposed picture is in line with the fact that N vacancies have a low formation energy. Formation energies indicate mutual stabilization of the intrinsic defects in GaN.

Complexity and formative experiences

Directory of Open Access Journals (Sweden)

Roque Strieder

2017-12-01

Full Text Available The contemporaneity is characterized by instability and diversity calling into question certainties and truths proposed in modernity. We recognize that the reality of things and phenomena become effective as a set of events, interactions, retroactions and chances. This different frame extends the need for revision of the epistemological foundations that sustain educational practices and give them sense. The complex thinking is an alternative option for acting as a counterpoint to classical science and its reductionist logic and knowledge compartmentalization, as well as to answer to contemporary epistemological and educational challenges. It aims to associate different areas and forms of knowledge, without, however merge them, distinguishing without separating the several disciplines and instances of the realities. This study, in theoretical references, highlights the relevance of complex approaches to support formative experiences because also able to produce complexities in reflections about educational issues. We conclude that formative possibilities from complexity potentialize the resignification of human’s conception and the understanding of its singularity in interdependence; The understanding that pedagogical and educational activities is a constant interrogation about the possibilities of knowing the knowledge and reframe learning, far beyond knowing its functions and utilitarian purposes; and, as a formative possibility, places us on the trail of responsibility, not as something eventual, but present and indicative of freedom to choose to stay or go beyond.

Formation and relaxation processes of photoinduced defects in a Ge-doped SiO2 glass

International Nuclear Information System (INIS)

Yamaguchi, M.; Saito, K.; Ikushima, A.J.

2002-01-01

The defect centers induced by ArF laser irradiation in Ge-doped SiO 2 have been investigated by the electron-spin resonance method. In order to observe formation and relaxation processes of the defects, step annealing has been carried out after the irradiation at 77 K. The thermally induced decay of the self-trapped hole (STH) and formation of the so-called Ge(2) centers have been observed with increasing temperature. The result suggests that the holes are transferred from the STH to the Ge(2)

Defect complexes and thermoluminescence in lithium fluoride. [X radiation

Energy Technology Data Exchange (ETDEWEB)

McKeever, S.W.S. (Oklahoma State Univ., Stillwater (USA). Dept. of Physics)

1984-01-01

X-ray induced luminescence measurements indicate that the emission wavelength is dependent upon the aggregation state of Mg within the LiF lattice. This suggests a close association between Mg and Ti within a defect complex. Pulse annealing measurements indicate that peak 5 may be due to the dissociation of trimers, followed by charge release.

Influence of crystal orientation on the formation of femtosecond laser-induced periodic surface structures and lattice defects accumulation

Energy Technology Data Exchange (ETDEWEB)

Sedao, Xxx; Garrelie, Florence, E-mail: florence.garrelie@univ-st-etienne.fr; Colombier, Jean-Philippe; Reynaud, Stéphanie; Pigeon, Florent [Université de Lyon, CNRS, UMR5516, Laboratoire Hubert Curien, Université de Saint Etienne, Jean Monnet, F-42023 Saint-Etienne (France); Maurice, Claire; Quey, Romain [Ecole Nationale Supérieure des Mines de Saint-Etienne, CNRS, UMR5307, Laboratoire Georges Friedel, F-42023 Saint-Etienne (France)

2014-04-28

The influence of crystal orientation on the formation of femtosecond laser-induced periodic surface structures (LIPSS) has been investigated on a polycrystalline nickel sample. Electron Backscatter Diffraction characterization has been exploited to provide structural information within the laser spot on irradiated samples to determine the dependence of LIPSS formation and lattice defects (stacking faults, twins, dislocations) upon the crystal orientation. Significant differences are observed at low-to-medium number of laser pulses, outstandingly for (111)-oriented surface which favors lattice defects formation rather than LIPSS formation.

Mitochondrial respiratory chain Complex I defects in Fanconi anemia complementation group A.

Science.gov (United States)

Ravera, Silvia; Vaccaro, Daniele; Cuccarolo, Paola; Columbaro, Marta; Capanni, Cristina; Bartolucci, Martina; Panfoli, Isabella; Morelli, Alessandro; Dufour, Carlo; Cappelli, Enrico; Degan, Paolo

2013-10-01

Fanconi anemia (FA) is a rare and complex inherited blood disorder of the child. At least 15 genes are associated with the disease. The highest frequency of mutations belongs to groups A, C and G. Genetic instability and cytokine hypersensitivity support the selection of leukemic over non-leukemic stem cells. FA cellular phenotype is characterized by alterations in red-ox state, mitochondrial functionality and energy metabolism as reported in the past however a clear picture of the altered biochemical phenotype in FA is still elusive and the final biochemical defect(s) still unknown. Here we report an analysis of the respiratory fluxes in FANCA primary fibroblasts, lymphocytes and lymphoblasts. FANCA mutants show defective respiration through Complex I, diminished ATP production and metabolic sufferance with an increased AMP/ATP ratio. Respiration in FANCC mutants is normal. Treatment with N-acetyl-cysteine (NAC) restores oxygen consumption to normal level. Defective respiration in FANCA mutants appear correlated with the FA pro-oxidative phenotype which is consistent with the altered morphology of FANCA mitochondria. Electron microscopy measures indeed show profound alterations in mitochondrial ultrastructure and shape. Copyright © 2013 Elsevier Masson SAS. All rights reserved.

Nuclear Pasta: Topology and Defects

Science.gov (United States)

da Silva Schneider, Andre; Horowitz, Charles; Berry, Don; Caplan, Matt; Briggs, Christian

2015-04-01

A layer of complex non-uniform phases of matter known as nuclear pasta is expected to exist at the base of the crust of neutron stars. Using large scale molecular dynamics we study the topology of some pasta shapes, the formation of defects and how these may affect properties of neutron star crusts.

Using the Dual-Tree Complex Wavelet Transform for Improved Fabric Defect Detection

Directory of Open Access Journals (Sweden)

Hermanus Vermaak

2016-01-01

Full Text Available The dual-tree complex wavelet transform (DTCWT solves the problems of shift variance and low directional selectivity in two and higher dimensions found with the commonly used discrete wavelet transform (DWT. It has been proposed for applications such as texture classification and content-based image retrieval. In this paper, the performance of the dual-tree complex wavelet transform for fabric defect detection is evaluated. As experimental samples, the fabric images from TILDA, a textile texture database from the Workgroup on Texture Analysis of the German Research Council (DFG, are used. The mean energies of real and imaginary parts of complex wavelet coefficients taken separately are identified as effective features for the purpose of fabric defect detection. Then it is shown that the use of the dual-tree complex wavelet transform yields greater performance as compared to the undecimated wavelet transform (UDWT with a detection rate of 4.5% to 15.8% higher depending on the fabric type.

The effect of temperature on primary defect formation in Ni–Fe alloy

Energy Technology Data Exchange (ETDEWEB)

Wang, Chengbin, E-mail: wangchengbin@sinap.ac.cn [Key Laboratory of Interfacial Physics and Technology, Chinese Academy of Sciences, Shanghai 201800 (China); Zhang, Wei; Ren, Cuilan [Key Laboratory of Interfacial Physics and Technology, Chinese Academy of Sciences, Shanghai 201800 (China); Huai, Ping [Key Laboratory of Nuclear Radiation and Nuclear Energy Technology, Chinese Academy of Sciences, Shanghai 201800 (China); Zhu, Zhiyuan [Key Laboratory of Interfacial Physics and Technology, Chinese Academy of Sciences, Shanghai 201800 (China)

2014-02-15

Molecular dynamics (MD) simulations have been used to study the influence of temperature on defect generation and evolution in nickel and Ni–Fe alloy (with 15% and 50% Fe content) with a 10-keV primary knock-on atom (PKA) at six different temperatures from 0 to 1500 K. The recently available Ni–Fe potential is used with its repulsive part modified by Vörtler. The temporal evolution and temperature dependence of stable defect formation and in-cascade clustering processes are analysed. The number of stable defect and the interstitial clustering fraction are found to increase with temperature whereas the vacancy clustering fraction decreases with temperature. The alloy composition dependence of the stable defect number is also found for the PKA energy considered here. Additionally, a study of the temperature influence on the cluster size distribution is performed, revealing a systematic change in the cluster size distributions, with higher temperature cascades producing larger interstitial clusters.

Nanoscale interfacial defect shedding in a growing nematic droplet.

Science.gov (United States)

Gurevich, Sebastian; Provatas, Nikolas; Rey, Alejandro

2017-08-01

Interfacial defect shedding is the most recent known mechanism for defect formation in a thermally driven isotropic-to-nematic phase transition. It manifests in nematic-isotropic interfaces going through an anchoring switch. Numerical computations in planar geometry established that a growing nematic droplet can undergo interfacial defect shedding, nucleating interfacial defect structures that shed into the bulk as +1/2 point defects. By extending the study of interfacial defect shedding in a growing nematic droplet to larger length and time scales, and to three dimensions, we unveil an oscillatory growth mode involving shape and anchoring transitions that results in a controllable regular distributions of point defects in planar geometry, and complex structures of disclination lines in three dimensions.

Complex formation of p-carboxybenzeneboronic acid with fructose

International Nuclear Information System (INIS)

Bulbul Islam, T.M.; Yoshino, K.

2000-01-01

To increase the solubility of p-caboxybenzeneboronic acid (PCBA) in physiological pH 7.4, the complex formation of PCBA with fructose has been studied by 11 B-NMR. PCBA formed complex with fructose and the complex increased the solubility of PCBA. The complex formation constant (log K) was obtained in pH 7.4 as 2.75 from the 11 B-NMR spectra. Based on this result the complex formation ability of PCBA with fructose has been discussed. (author)

Length-scale and strain rate-dependent mechanism of defect formation and fracture in carbon nanotubes under tensile loading

Energy Technology Data Exchange (ETDEWEB)

Javvaji, Brahmanandam [Indian Institute of Science, Department of Aerospace Engineering (India); Raha, S. [Indian Institute of Science, Department of Computational and Data Sciences (India); Mahapatra, D. Roy, E-mail: droymahapatra@aero.iisc.ernet.in [Indian Institute of Science, Department of Aerospace Engineering (India)

2017-02-15

Electromagnetic and thermo-mechanical forces play a major role in nanotube-based materials and devices. Under high-energy electron transport or high current densities, carbon nanotubes fail via sequential fracture. The failure sequence is governed by certain length scale and flow of current. We report a unified phenomenological model derived from molecular dynamic simulation data, which successfully captures the important physics of the complex failure process. Length-scale and strain rate-dependent defect nucleation, growth, and fracture in single-walled carbon nanotubes with diameters in the range of 0.47 to 2.03 nm and length which is about 6.17 to 26.45 nm are simulated. Nanotubes with long length and small diameter show brittle fracture, while those with short length and large diameter show transition from ductile to brittle fracture. In short nanotubes with small diameters, we observe several structural transitions like Stone-Wales defect initiation, its propagation to larger void nucleation, formation of multiple chains of atoms, conversion to monatomic chain of atoms, and finally complete fracture of the carbon nanotube. Hybridization state of carbon-carbon bonds near the end cap evolves, leading to the formation of monatomic chain in short nanotubes with small diameter. Transition from ductile to brittle fracture is also observed when strain rate exceeds a critical value. A generalized analytical model of failure is established, which correlates the defect energy during the formation of atomic chain with aspect ratio of the nanotube and strain rate. Variation in the mechanical properties such as elastic modulus, tensile strength, and fracture strain with the size and strain rate shows important implications in mitigating force fields and ways to enhance the life of electronic devices and nanomaterial conversion via fracture in manufacturing.

Hydrogen interaction with radiation defects in p-type silicon

CERN Document Server

Feklisova, O V; Yakimov, E B; Weber, J

2001-01-01

Hydrogen interaction with radiation defects in p-type silicon has been investigated by deep-level non-stationary spectroscopy. Hydrogen is introduced into the high-energy electron-irradiated crystals under chemical etching in acid solutions at room temperature followed by the reverse-bias annealing at 380 K. It is observed that passivation of the irradiation-induced defects is accompanied by formation of novel electrically active defects with hydrogen-related profiles. Effect of hydrogen on the electrical activity of the C sub s C sub i complexes is shown for the first time. Based on the spatial distribution and passivation kinetics, possible nature of the novel complexes is analyzed. The radii for hydrogen capture by vacancies, K-centers, C sub s C sub i centers and the novel complexes are determined

Defect Formation and Electronic Transport at AlGaN/GaN Interfaces

International Nuclear Information System (INIS)

Haller, E.E.; Hsu, Leonardo; Walukiewicz, W.

1997-01-01

We have calculated the effects of charged defects located near an Al x Ga 1-x N/GaN heterointerface on the transport properties of the two dimensional electron gas confined at the interface and also determined the distribution of those defects taking into consideration the dependence of the formation energy on the Fermi level. In addition, we have investigated the effects of hydrostatic pressure on such modulation doped heterostructures and find that pressure can be used to make the determination of the properties of the two dimensional electron gas easier by eliminating parallel three dimensional conduction paths

Disorder and defect formation mechanisms in molecular-beam-epitaxy grown silicon epilayers

International Nuclear Information System (INIS)

Akbari-Sharbaf, Arash; Baribeau, Jean-Marc; Wu, Xiaohua; Lockwood, David J.; Fanchini, Giovanni

2013-01-01

We investigate the role of disorder, stress and crystallite size in determining the density of defects in disordered and partially ordered silicon thin films deposited at low or moderate temperatures by molecular beam epitaxy. We find that the paramagnetic defect density measured by electron spin resonance (ESR) is strongly dependent on the growth temperature of the films, decreasing from ∼ 2 · 10 19 cm −3 at 98 °C to ∼ 1 · 10 18 cm −3 at 572 °C. The physical nature of the defects is strongly dependent on the range of order in the films: ESR spectra consistent with dangling bonds in an amorphous phase are observed at the lowest temperatures, while the ESR signal gradually becomes more anisotropic as medium-range order improves and the stress level (measured both by X-ray diffraction and Raman spectroscopy) is released in more crystalline films. Anisotropic ESR spectra consistent with paramagnetic defects embedded in an epitaxial phase are observed at the highest growth temperature (572 °C). - Highlights: ► Disordered Si epilayers were grown by molecular beam epitaxy. ► Growth has been carried out at temperatures T = 98 °C–514 °C. ► A correlation between defect density and disorder in the films has been found. ► Lack of medium range order and stress cause the formation of defects at low T. ► At high T, defects are associated to grain boundaries and oriented stacking faults

NMDA Receptor Signaling Is Important for Neural Tube Formation and for Preventing Antiepileptic Drug-Induced Neural Tube Defects.

Science.gov (United States)

Sequerra, Eduardo B; Goyal, Raman; Castro, Patricio A; Levin, Jacqueline B; Borodinsky, Laura N

2018-05-16

Failure of neural tube closure leads to neural tube defects (NTDs), which can have serious neurological consequences or be lethal. Use of antiepileptic drugs (AEDs) during pregnancy increases the incidence of NTDs in offspring by unknown mechanisms. Here we show that during Xenopus laevis neural tube formation, neural plate cells exhibit spontaneous calcium dynamics that are partially mediated by glutamate signaling. We demonstrate that NMDA receptors are important for the formation of the neural tube and that the loss of their function induces an increase in neural plate cell proliferation and impairs neural cell migration, which result in NTDs. We present evidence that the AED valproic acid perturbs glutamate signaling, leading to NTDs that are rescued with varied efficacy by preventing DNA synthesis, activating NMDA receptors, or recruiting the NMDA receptor target ERK1/2. These findings may prompt mechanistic identification of AEDs that do not interfere with neural tube formation. SIGNIFICANCE STATEMENT Neural tube defects are one of the most common birth defects. Clinical investigations have determined that the use of antiepileptic drugs during pregnancy increases the incidence of these defects in the offspring by unknown mechanisms. This study discovers that glutamate signaling regulates neural plate cell proliferation and oriented migration and is necessary for neural tube formation. We demonstrate that the widely used antiepileptic drug valproic acid interferes with glutamate signaling and consequently induces neural tube defects, challenging the current hypotheses arguing that they are side effects of this antiepileptic drug that cause the increased incidence of these defects. Understanding the mechanisms of neurotransmitter signaling during neural tube formation may contribute to the identification and development of antiepileptic drugs that are safer during pregnancy. Copyright © 2018 the authors 0270-6474/18/384762-12$15.00/0.

The formation of radiation defects in monohydrate of lithium sulfate

International Nuclear Information System (INIS)

Bahytzhan, A.B.; Zhussupov, A.A.; Kim, L.M.

2005-01-01

monohydrate is not observed, if the sample is irradiated by ultraviolet light 200-230 nm. Therefore one of the products photolysis of crystal water are atomic hydrogen. Formation the atomic hydrogen allows to explain the suppress recombination luminescence and decomposition of sulphate anions. It is shown by methods of quantum chemistry that the atomic hydrogen forms steady complexes with SO 3 - -, SO 4 - and O - . Thus radiolysis of crystal water can 'switch off' defects sulphate subsystem recombination processes. On the other hand at interaction anions SO 4 2- with atomic hydrogen the ions SO 3 - and OH - are formed with activation less. Alternative processes of interaction of products radiolysis of water molecules with sulphate anions is not established. It allows to assume, that the disintegration of defects SO 3 - is responsible for the recombination luminescence at 130 K. The spectrum of emission at 130 K consists one optical band with maximum at 3.1 eV. The same emission was observed in the potassium sulphate. It is connected with to disintegration defects SO 3 -

Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering

International Nuclear Information System (INIS)

Oliviero, E.; David, M. L.; Beaufort, M. F.; Barbot, J. F.; Fichtner, P. F. P.

2013-01-01

The crystalline-to-amorphous transformation induced by lithium ion implantation at low temperature has been investigated. The resulting damage structure and its thermal evolution have been studied by a combination of Rutherford backscattering spectroscopy channelling (RBS/C) and cross sectional transmission electron microscopy (XTEM). Lithium low-fluence implantation at liquid nitrogen temperature is shown to produce a three layers structure: an amorphous layer surrounded by two highly damaged layers. A thermal treatment at 400 °C leads to the formation of a sharp amorphous/crystalline interfacial transition and defect annihilation of the front heavily damaged layer. After 600 °C annealing, complete recrystallization takes place and no extended defects are left. Anomalous recrystallization rate is observed with different motion velocities of the a/c interfaces and is ascribed to lithium acting as a surfactant. Moreover, the sharp buried amorphous layer is shown to be an efficient sink for interstitials impeding interstitial supersaturation and {311} defect formation in case of subsequent neon implantation. This study shows that lithium implantation at liquid nitrogen temperature can be suitable to form a sharp buried amorphous layer with a well-defined crystalline front layer, thus having potential applications for defects engineering in the improvement of post-implantation layers quality and for shallow junction formation.

A global conformance quality model. A new strategic tool for minimizing defects caused by variation, error, and complexity

Energy Technology Data Exchange (ETDEWEB)

Hinckley, C. Martin [Sandia National Lab. (SNL-CA), Livermore, CA (United States)

1994-01-01

The performance of Japanese products in the marketplace points to the dominant role of quality in product competition. Our focus is motivated by the tremendous pressure to improve conformance quality by reducing defects to previously unimaginable limits in the range of 1 to 10 parts per million. Toward this end, we have developed a new model of conformance quality that addresses each of the three principle defect sources: (1) Variation, (2) Human Error, and (3) Complexity. Although the role of variation in conformance quality is well documented, errors occur so infrequently that their significance is not well known. We have shown that statistical methods are not useful in characterizing and controlling errors, the most common source of defects. Excessive complexity is also a root source of defects, since it increases errors and variation defects. A missing link in the defining a global model has been the lack of a sound correlation between complexity and defects. We have used Design for Assembly (DFA) methods to quantify assembly complexity and have shown that assembly times can be described in terms of the Pareto distribution in a clear exception to the Central Limit Theorem. Within individual companies we have found defects to be highly correlated with DFA measures of complexity in broad studies covering tens of millions of assembly operations. Applying the global concepts, we predicted that Motorola`s Six Sigma method would only reduce defects by roughly a factor of two rather than orders of magnitude, a prediction confirmed by Motorola`s data. We have also shown that the potential defects rates of product concepts can be compared in the earliest stages of development. The global Conformance Quality Model has demonstrated that the best strategy for improvement depends upon the quality control strengths and weaknesses.

Formation of grown-in defects in molecular beam epitaxial Ga(In)NP: Effects of growth conditions and postgrowth treatments

International Nuclear Information System (INIS)

Dagnelund, D.; Buyanova, I. A.; Wang, X. J.; Chen, W. M.; Utsumi, A.; Furukawa, Y.; Wakahara, A.; Yonezu, H.

2008-01-01

Effects of growth conditions and post-growth treatments, such as presence of N ions, N 2 flow, growth temperature, In alloying, and postgrowth rapid thermal annealing (RTA), on formation of grown-in defects in Ga(In)NP prepared by molecular beam epitaxy are studied in detail by the optically detected magnetic resonance (ODMR) technique. Several common residual defects, such as two Ga-interstitial defects (i.e., Ga i -A and Ga i -B) and two unidentified defects with a g factor around 2 (denoted by S1 and S2), are closely monitored. Bombardment of impinging N ions on grown sample surface is found to facilitate formation of these defects. Higher N 2 flow is shown to have an even more profound effect than a higher number of ions in introducing these defects. Incorporation of a small amount of In (e.g., 5.1%) in GaNP seems to play a minor role in the formation of the defects. In GaInNP with 45% of In; however, the defects were found to be abundant. Effect of RTA on the defects is found to depend on initial configurations of Ga i -related defects formed during the growth. In the alloys where the Ga i -A and Ga i -B defects are absent in the as-grown samples (i.e., GaNP grown at a low temperature of 460 deg. C), the concentrations of the two Ga i defects are found to increase after postgrowth RTA. This indicates that the defects originally introduced in the as-grown alloys have been transformed into the more thermally stable Ga i -A and Ga i -B during RTA. On the other hand, when the Ga i -A and Ga i -B are readily abundant (e.g., at higher growth temperatures (≥500 deg. C), RTA leads to a slight reduction of the Ga i -A and Ga i -B ODMR signals. The S2 defect is also shown to be thermally stable upon the RTA treatment

Influence of neutrophil defects on Burkholderia cepacia complex pathogenesis

Directory of Open Access Journals (Sweden)

Laura A. Porter

2011-11-01

Full Text Available The Burkholderia cepacia complex (Bcc is a group of Gram-negative bacteria that are ubiquitous in the environment and have emerged as opportunistic pathogens in immunocompromised patients. The primary patient populations infected with Bcc include individuals with cystic fibrosis (CF, as well as those with chronic granulomatous disease (CGD. While Bcc infection in CF is better characterized than in CGD, these two genetic diseases are not obviously similar and it is currently unknown if there is any commonality in host immune defects that is responsible for the susceptibility to Bcc. CF is caused by mutations in the CF transmembrane conductance regulator, resulting in manifestations in various organ systems, however the major cause of morbidity and mortality is currently due to bacterial respiratory infections. CGD, on the other hand, is a genetic disorder that is caused by defects in phagocyte NADPH oxidase. Because of the defect in CGD, phagocytes in these patients are unable to produce reactive oxygen species, which results in increased susceptibility to bacterial and fungal infections. Despite this significant defect in microbial clearance, the spectrum of pathogens frequently implicated in infections in CGD is relatively narrow and includes some bacterial species that are considered almost pathognomonic for this disorder. Very little is known about the cause of the specific susceptibility to Bcc over other potential pathogens more prevalent in the environment, and a better understanding of specific mechanisms required for bacterial virulence has become a high priority. This review will summarize both the current knowledge and future directions related to Bcc virulence in immunocompromised individuals with a focus on the roles of bacterial factors and neutrophil defects in pathogenesis.

Argon defect complexes in low energy Ar irradiated molybdenum

International Nuclear Information System (INIS)

Veen, A. van; Buters, W.T.M.; Kolk, G.J. van der; Caspers, L.M.; Armstrong, T.R.

1982-01-01

Thermal desorption spectrometry has been used to study the defects created in Mo irradiated along the direction with Ar ions ranging in energy from 0.1 to 2 keV. In addition to monitoring the release of the implanted Ar, additional information has been obtained by decoration of the defects with low energy helium and subsequent monitoring of the helium release. The studies show evidence that the Ar can be trapped in both substitutional sites and in a configuration in which the Ar is associated with vacancies (ArVsub(n), n >= 2). Most of the Ar implanted at high energy is released at approx. equal to 1500 K by thermal vacancy assisted diffusion. Argon trapped closer to the surface is released at lower temperatures via at least three different surface related release mechanisms. Additional results are presented on the interaction of self interstitial atoms (introduced by 100 eV Xe bombardment) with the Ar defects. Substitutional Ar is found to convert to interstitial Ar which seems to be mobile at room temperature. The Ar-vacancy complexes are found to be reduced to substitutional Ar. The results of atomistic calculations of the release mechanisms will also be presented. (orig.)

Investigation of Dendrite Coarsening in Complex Shaped Lamellar Graphite Iron Castings

Directory of Open Access Journals (Sweden)

Péter Svidró

2017-07-01

Full Text Available Shrinkage porosity and metal expansion penetration are two casting defects that appear frequently during the production of complex-shaped lamellar graphite iron components. These casting defects are formed during the solidification and usually form in the part of the casting which solidifies last. The position of the area that solidifies last is dependent on the thermal conditions. Test castings with thermal conditions like those existing in a complex-shaped casting were successfully applied to provoke a shrinkage porosity defect and a metal expansion penetration defect. The investigation of the primary dendrite morphology in the defected positions indicates a maximum intradendritic space, where the shrinkage porosity and metal expansion penetration defects appear. Moving away from the defect formation area, the intradendritic space decreases. A comparison of the intradendritic space with the simulated local solidification times indicates a strong relationship, which can be explained by the dynamic coarsening process. More specifically, long local solidification times facilitates the formation of a locally coarsened austenite morphology. This, in turn, enables the formation of a shrinkage porosity or a metal expansion penetration.

Recombination via point defects and their complexes in solar silicon

Energy Technology Data Exchange (ETDEWEB)

Peaker, A.R.; Markevich, V.P.; Hamilton, B. [Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Parada, G.; Dudas, A.; Pap, A. [Semilab, 2 Prielle Kornelia Str, 1117 Budapest (Hungary); Don, E. [Semimetrics, PO Box 36, Kings Langley, Herts WD4 9WB (United Kingdom); Lim, B.; Schmidt, J. [Institute for Solar Energy Research (ISFH) Hamlen, 31860 Emmerthal (Germany); Yu, L.; Yoon, Y.; Rozgonyi, G. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

2012-10-15

Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <10{sup 10} cm{sup -3}). Consequently, in integrated circuit technologies using such material, electrically active inadvertent impurities and structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to the use of less pure silicon, multi-crystalline material, and low cost processing for solar applications. Cells made in this way have significant extrinsic recombination mechanisms. In this paper we review recombination involving defects and impurities in single crystal and in multi-crystalline solar silicon. Our main techniques for this work are recombination lifetime mapping measurements using microwave detected photoconductivity decay and variants of deep level transient spectroscopy (DLTS). In particular, we use Laplace DLTS to distinguish between isolated point defects, small precipitate complexes and decorated extended defects. We compare the behavior of some common metallic contaminants in solar silicon in relation to their effect on carrier lifetime and cell efficiency. Finally, we consider the role of hydrogen passivation in relation to transition metal contaminants, grain boundaries and dislocations. We conclude that recombination via point defects can be significant but in most multi-crystalline material the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

In-Situ Photoexcitation-Induced Suppression of Point Defect Generation in Ion Implanted Silicon

International Nuclear Information System (INIS)

Cho, C.R.; Rozgonyi, G.A.; Yarykin, N.; Zuhr, R.A.

1999-01-01

The formation of vacancy-related defects in n-type silicon has been studied immediately after implantation of He, Si, or Ge ions at 85 K using in-situ DLTS. A-center concentrations in He-implanted samples reach a maximum immediately after implantation, whereas, with Si or Ge ion implanted samples they continuously increase during subsequent anneals. It is proposed that defect clusters, which emit vacancies during anneals, are generated in the collision cascades of Si or Ge ions. An illumination-induced suppression of A-center formation is seen immediately after implantation of He ions at 85 K. This effect is also observed with Si or Ge ions, but only after annealing. The suppression of vacancy complex formation via photoexcitation is believed to occur due to an enhanced recombination of defects during ion implantation, and results in reduced number of vacancies remaining in the defect clusters. In p-type silicon, a reduction in K-center formation and an enhanced migration of defects are concurrently observed in the illuminated sample implanted with Si ions. These observations are consistent with a model where the injection of excess carriers modifies the defect charge state and impacts their diffusion

Defect studies in copper-based p-type transparent conducting oxides

Science.gov (United States)

Ameena, Fnu

Among other intrinsic open-volume defects, copper vacancy (VCu) has been theoretically identified as the major acceptor in p-type Cu-based semiconducting transparent oxides, which has potential as low-cost photovoltaic absorbers in semi-transparent solar cells. A series of positron annihilation experiments with pure Cu, Cu2O, and CuO presented strong presence of VCu and its complexes in the copper oxides. The lifetime data also showed that the density of VCu was becoming higher as the oxidation state of Cu increased which was consistent with the decrease in the formation energy of VCu. Doppler broadening measurements further indicated that electrons with low momentum made more contribution to the contributed as pure Cu oxidizes to copper oxides. The metastable defects are known to be generated in Cu2O upon illumination and it has been known to affect the performance of Cu2O-based hetero-junctions used in solar cells. The metastable effect was studied using positron annihilation lifetime spectroscopy and its data showed the change in the defect population upon light exposure and the minimal effect of light-induced electron density increase in the bulk of materials to the average lifetime of the positrons. The change in the defect population is concluded to be related to the dissociation and association of VCu -- V Cu complexes. For example, the shorter lifetime under light was ascribed to the annihilation with smaller size vacancies, which explains the dissociation of the complexes with light illumination. Doppler broadening of the annihilation was independent of light illumination, which suggested that the chemical nature of the defects remained without change upon their dissociation and association -- only the size distribution of copper vacancies varied. The delafossite metal oxides, CuMIIIO2 are emerging wide-bandgap p-type semiconductors. In this research, the formation energies of structural vacancies are calculated using Van Vechten cavity model as an attempt

STAR FORMATION ACROSS THE W3 COMPLEX

Energy Technology Data Exchange (ETDEWEB)

Román-Zúñiga, Carlos G.; Ybarra, Jason E.; Tapia, Mauricio [Instituto de Astronomía, Universidad Nacional Autónoma de México, Unidad Académica en Ensenada, Km 103 Carr. Tijuana–Ensenada, Ensenada 22860 (Mexico); Megías, Guillermo D. [Facultad de Física. Universidad de Sevilla. Dpto. Física Atómica, Molecular y Nuclear, Sevilla, E-41080 (Spain); Lada, Elizabeth A. [Astronomy Department, University of Florida, 211 Bryant Space Sciences Center, FL 32611 (United States); Alves, Joáo F. [Institute of Astronomy, University of Vienna, Türkenschanzstr. 17, A-1180 Vienna (Austria)

2015-09-15

We present a multi-wavelength analysis of the history of star formation in the W3 complex. Using deep, near-infrared ground-based images combined with images obtained with Spitzer and Chandra observatories, we identified and classified young embedded sources. We identified the principal clusters in the complex and determined their structure and extension. We constructed extinction-limited samples for five principal clusters and constructed K-band luminosity functions that we compare with those of artificial clusters with varying ages. This analysis provided mean ages and possible age spreads for the clusters. We found that IC 1795, the centermost cluster of the complex, still hosts a large fraction of young sources with circumstellar disks. This indicates that star formation was active in IC 1795 as recently as 2 Myr ago, simultaneous to the star-forming activity in the flanking embedded clusters, W3-Main and W3(OH). A comparison with carbon monoxide emission maps indicates strong velocity gradients in the gas clumps hosting W3-Main and W3(OH) and shows small receding clumps of gas at IC 1795, suggestive of rapid gas removal (faster than the T Tauri timescale) in the cluster-forming regions. We discuss one possible scenario for the progression of cluster formation in the W3 complex. We propose that early processes of gas collapse in the main structure of the complex could have defined the progression of cluster formation across the complex with relatively small age differences from one group to another. However, triggering effects could act as catalysts for enhanced efficiency of formation at a local level, in agreement with previous studies.

Microstructural defects modeling in the Al-Mo system

International Nuclear Information System (INIS)

Pascuet, Maria I.; Fernandez, Julian R.; Monti, Ana M.

2006-01-01

In this work we have utilized computer simulation techniques to study microstructural defects, such as point defects and interfaces, in the Al-Mo alloy. Such alloy is taken as a model to study the Al(fcc)/U-Mo(bcc) interface. The EAM interatomic potential used has been fitted to the formation energy and lattice constant of the AlMo 3 intermetallic. Formation of vacancies for both components Al and Mo and anti-sites, Al Mo and Mo Al , as well as vacancy migration was studied in this structure. We found that the lowest energy defect complex that preserves stoichiometry is the antisite pair Al Mo +Mo Al , in correspondence with other intermetallics of the same structure. Our results also suggest that the structure of the Al(fcc)/Mo(bcc) interface is unstable, while that of the Al(fcc)/Al 5 Mo interface is stable, as observed experimentally. (author) [es

[Complex skull defects reconstruction with САD/САМ titanium and polyetheretherketone (PEEK) implants].

Science.gov (United States)

Eolchiyan, S A

2014-01-01

Predictable and stable functional and aesthetic result is the aim of priority for the neurosurgeon dealing with the reconstruction of large cranial bone defects and complex-formed skull defects involving cranio-orbital region. the paper presents the experience with САD/САМ titanium and polyetheretherketone (PEEK) implants for complex-formed and large skull bone defects reconstruction. Between 2005 and 2013 nine patients (5 females and 4 males) underwent cranioplasty and cranio-facial reconstruction with insertion of the customized САD/САМ titanium and PEEK implants. Computer-assisted preoperative planning was undertaken by the surgeon and the engineer together in 3 cases to provide accurate implant design. Eight patients had complex-formed and large posttraumatic defects of fronto-orbital (7 cases) and parietal (one case) regions. In two of these cases one-step reconstruction surgery for posttraumatic fronto-orbital defects combined with adjacent orbital roof (one case) and orbito-zygomatic (one case) deformities was performed. One patient underwent one-step primary cranioplasty after cranio-orbital fibrous dysplasia focus resection. Titanium implants were used in 4 cases while PEEK implants - in 5 ones. The follow-up period ranged from 6 months till 8,5 years (median 4,4 years). The accuracy of the implant intraoperative fit was perfect in all cases. Postoperative wounds healed primary and there were no any complications in the series presented. Post-op clinical assessment and CT data testified to high implants precision, good functional and aesthetic outcomes in all patients. САD/САМ titanium and PEEK implants application should allow for optimal reconstruction in the challenging patients with complex-formed and large skull bone defects providing predictable good functional and aesthetic result together with surgery morbidity and duration reduction. Computer-assisted preoperative planning should be undertaken for САD/САМ implants creation in

Formation and properties of radiation-induced defects and radiolysis products in lithium orthosilicate

Energy Technology Data Exchange (ETDEWEB)

Tiliks, J.E.; Kizane, G.K.; Supe, A.A.; Abramenkovs, A.A.; Tiliks, J.J. (Latvian Univ., Riga (Latvia)); Vasiljev, V.G. (Acad. A.A. Bochvar Inst. of Inorganic Materials, Moscow (USSR))

1991-12-01

Formation and properties of radiation-induced defects and radiolysis products in polycrystalline powders and ceramic pellets of Li{sub 4}SiO{sub 4} were studied under the effect of various types of ionizing irradiation ({gamma} quants, accelerated electrons, reactor irradiation), humidity, temperature, impurities in the samples, etc. The content of radiation defects and radiolysis products poorly depends on irradiation type, dose rate, admixture elements. The concentration of defects highly depends on the temperature of irradiation, humidity, granural size. Empirical dependence of radiolysis degree {alpha} on the dose was found: {alpha}=5x10{sup -2}xD{sup 0.5} for {gamma} and electron irradiation (T{sub rad}=300-350 K) and {alpha}=5x10{sup -3}xD{sup 0.5} for reactor radiation (T{sub rad}=700-800 K); {alpha} - matrix dissociation degree (in %); D - dose (in MGy). Colloidal lithium and silicon, lithium and silicon oxides, and O{sub 2} are the final products of radiolysis. Radiation-induced defects change tritium thermo-extraction parameters, deteriorate mechanical, thermo-physical and electric properties of ceramics. (orig.).

Formation of defect-free 6FDA-DAM asymmetric hollow fiber membranes for gas separations

KAUST Repository

Xu, Liren; Zhang, Chen; Rungta, Meha; Qiu, Wulin; Liu, Junqiang; Koros, William J.

2014-01-01

This paper reports the formation of defect-free 6FDA-DAM asymmetric hollow fiber membranes. 6FDA-polyimides are of great interest for advanced gas separation membranes, and 6FDA-DAM polyimide is a representative polymer in this family

Sonic Hedgehog mutations are not a common cause of congenital hypopituitarism in the absence of complex midline cerebral defects.

Science.gov (United States)

Paulo, Sabrina Soares; Fernandes-Rosa, Fábio L; Turatti, Wendy; Coeli-Lacchini, Fernanda Borchers; Martinelli, Carlos E; Nakiri, Guilherme S; Moreira, Ayrton C; Santos, Antônio C; de Castro, Margaret; Antonini, Sonir R

2015-04-01

Sonic Hedgehog (SHH) and GLI2, an obligatory mediator of SHH signal transduction, are holoprosencephaly (HPE)-associated genes essential in pituitary formation. GLI2 variants have been found in patients with congenital hypopituitarism without complex midline cerebral defects (MCD). However, data on the occurrence of SHH mutations in these patients are limited. We screened for SHH and GLI2 mutations or copy number variations (CNV) in patients with congenital hypopituitarism without MCD or with variable degrees of MCD. Detailed data on clinical, laboratory and neuroimaging findings of 115 patients presenting with congenital hypopituitarism without MCD, septo-optic dysplasia or HPE were analysed. The SHH and GLI2 genes were directly sequenced, and the presence of gene CNV was analysed by multiplex ligation-dependent probe amplification (MLPA). Anterior pituitary deficiency was found in 74% and 53% of patients with SOD or HPE, respectively. Diabetes insipidus was common in patients with HPE (47%) but infrequent in patients with congenital hypopituitarism or SOD (7% and 8%, respectively). A single heterozygous nonsense SHH mutation (p.Tyr175Ter) was found in a patient presenting with hypopituitarism and alobar HPE. No other SHH mutations or CNV were found. Nine GLI2 variations (8 missense and 1 frameshift) including a homozygous and a compound heterozygous variation were found in patients with congenital hypopituitarism or SOD, but not in HPE patients. No GLI2 CNV were found. SHH mutations or copy number variations are not a common cause of congenital hypopituitarism in patients without complex midline cerebral defects. GLI2 variants are found in some patients with congenital hypopituitarism without complex midline cerebral defects or septo-optic dysplasia. However, functional analyses of these variants are needed to strengthen genotype-phenotype relationship. © 2014 John Wiley & Sons Ltd.

Defects in Cu(In,Ga)Se{sub 2} chalcopyrite semiconductors: a comparative study of material properties, defect states, and photovoltaic performance

Energy Technology Data Exchange (ETDEWEB)

Cao, Qing; Gunawan, Oki; Copel, Matthew; Reuter, Kathleen B; Chey, S Jay; Mitzi, David B [IBM T.J. Watson Research Center, Yorktown Heights, NY (United States); Deline, Vaughn R [IBM Almaden Resesarch Center, San Jose, CA (United States)

2011-10-15

Understanding defects in Cu(In,Ga)(Se,S){sub 2} (CIGS), especially correlating changes in the film formation process with differences in material properties, photovoltaic (PV) device performance, and defect levels extracted from admittance spectroscopy, is a critical but challenging undertaking due to the complex nature of this polycrystalline compound semiconductor. Here we present a systematic comparative study wherein varying defect density levels in CIGS films were intentionally induced by growing CIGS grains using different selenium activity levels. Material characterization results by techniques including X-ray diffraction, scanning electron microscopy, transmission electron microscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy, and medium energy ion scattering indicate that this process variation, although not significantly affecting CIGS grain structure, crystal orientation, or bulk composition, leads to enhanced formation of a defective chalcopyrite layer with high density of indium or gallium at copper antisite defects ((In, Ga){sub Cu}) near the CIGS surface, for CIGS films grown with insufficient selenium supply. This defective layer or the film growth conditions associated with it is further linked with observed current-voltage characteristics, including rollover and crossover behavior, and a defect state at around 110 meV (generally denoted as the N1 defect) commonly observed in admittance spectroscopy. The impact of the (In, Ga){sub Cu} defects on device PV performance is also established. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of defects on the small polaron formation and transport properties of hematite from first-principles calculations.

Science.gov (United States)

Smart, Tyler J; Ping, Yuan

2017-10-04

Hematite (α-Fe 2 O 3 ) is a promising candidate as a photoanode material for solar-to-fuel conversion due to its favorable band gap for visible light absorption, its stability in an aqueous environment and its relatively low cost in comparison to other prospective materials. However, the small polaron transport nature in α-Fe 2 O 3 results in low carrier mobility and conductivity, significantly lowering its efficiency from the theoretical limit. Experimentally, it has been found that the incorporation of oxygen vacancies and other dopants, such as Sn, into the material appreciably enhances its photo-to-current efficiency. Yet no quantitative explanation has been provided to understand the role of oxygen vacancy or Sn-doping in hematite. We employed density functional theory to probe the small polaron formation in oxygen deficient hematite, N-doped as well as Sn-doped hematite. We computed the charged defect formation energies, the small polaron formation energy and hopping activation energies to understand the effect of defects on carrier concentration and mobility. This work provides us with a fundamental understanding regarding the role of defects on small polaron formation and transport properties in hematite, offering key insights into the design of new dopants to further improve the efficiency of transition metal oxides for solar-to-fuel conversion.

Field induced modification of defect complexes in magnesium-doped lithium niobate

Energy Technology Data Exchange (ETDEWEB)

Meyer, Nadège; Granzow, Torsten [Department of Materials Research and Technology, Luxembourg Institute of Science and Technology, 41 rue du Brill, L-4422 Belvaux (Luxembourg); Nataf, Guillaume F., E-mail: nataf@lippmann.lu [Department of Materials Research and Technology, Luxembourg Institute of Science and Technology, 41 rue du Brill, L-4422 Belvaux (Luxembourg); CEA, DSM/IRAMIS/SPEC, F-91191 Gif-sur-Yvette Cedex (France)

2014-12-28

Dielectric constant, thermally stimulated depolarization currents (TSDC), and conductivity of undoped and 5% Mg-doped LiNbO{sub 3} single crystals between −100 °C and 200 °C have been investigated. A Debye-like dielectric relaxation with an activation energy of 135 meV is observed in the Mg-doped material, but not in undoped crystals. On heating this relaxation disappears near 140 °C and does not reappear after cooling. Anomalies observed in TSDC around this temperature are attributed to the motion of lithium vacancies, in agreement with conductivity measurements. It is proposed that in thermal equilibrium the electrons from the Mg{sub Li}{sup •} donors are trapped in (4Mg{sub Li}{sup •}+4V{sub Li}{sup ′}) defect complexes. High-temperature poling breaks these defect complexes. The transition of the liberated electrons between the Mg{sub Li}{sup •} donor centers and the Nb{sub Nb} forming the conduction band gives rise to the observed dielectric relaxation.

Complexity of formation in holography

International Nuclear Information System (INIS)

Chapman, Shira; Marrochio, Hugo; Myers, Robert C.

2017-01-01

It was recently conjectured that the quantum complexity of a holographic boundary state can be computed by evaluating the gravitational action on a bulk region known as the Wheeler-DeWitt patch. We apply this complexity=action duality to evaluate the ‘complexity of formation’ (DOI: 10.1103/PhysRevLett.116.191301; 10.1103/PhysRevD.93.086006), i.e. the additional complexity arising in preparing the entangled thermofield double state with two copies of the boundary CFT compared to preparing the individual vacuum states of the two copies. We find that for boundary dimensions d>2, the difference in the complexities grows linearly with the thermal entropy at high temperatures. For the special case d=2, the complexity of formation is a fixed constant, independent of the temperature. We compare these results to those found using the complexity=volume duality.

Complexity of formation in holography

Energy Technology Data Exchange (ETDEWEB)

Chapman, Shira [Perimeter Institute for Theoretical Physics,Waterloo, ON N2L 2Y5 (Canada); Marrochio, Hugo [Perimeter Institute for Theoretical Physics,Waterloo, ON N2L 2Y5 (Canada); Department of Physics & Astronomy and Guelph-Waterloo Physics Institute,University of Waterloo, Waterloo, ON N2L 3G1 (Canada); Myers, Robert C. [Perimeter Institute for Theoretical Physics,Waterloo, ON N2L 2Y5 (Canada)

2017-01-16

It was recently conjectured that the quantum complexity of a holographic boundary state can be computed by evaluating the gravitational action on a bulk region known as the Wheeler-DeWitt patch. We apply this complexity=action duality to evaluate the ‘complexity of formation’ (DOI: 10.1103/PhysRevLett.116.191301; 10.1103/PhysRevD.93.086006), i.e. the additional complexity arising in preparing the entangled thermofield double state with two copies of the boundary CFT compared to preparing the individual vacuum states of the two copies. We find that for boundary dimensions d>2, the difference in the complexities grows linearly with the thermal entropy at high temperatures. For the special case d=2, the complexity of formation is a fixed constant, independent of the temperature. We compare these results to those found using the complexity=volume duality.

Structural defects in monocrystalline silicon: from radiation ones to growing and technological

International Nuclear Information System (INIS)

Gerasimenko, N.N.; Pavlyuchenko, M.N.; Dzhamanbalin, K.K.

2001-01-01

The systematical review of properties and conditions of radiation structures in monocrystalline silicon including own defects (elementary and complex, disordered fields) as well as defect-impurity formations is presented. The most typical examples of principle effects influence of known defects on radiation-induced processes (phase transformations, diffusion and heteration and others are considered. Experimental facts and models of silicon radiation amorphization have been analyzed in comparison of state of the radiation amorphization radiation problem of metals and alloys. The up-to-date status of the problem of the radiation defects physics are discussed, including end-of-range -, n+-, rod-like- defects. The phenomenon self-organization in crystals with defects has been considered. The examples of directed using radiation defects merged in independent trend - defects engineering - are given

Exploring and Controlling Intrinsic Defect Formation in SnO2 Thin Films

KAUST Repository

Porte, Yoann; Maller, Robert; Faber, Hendrik; Alshareef, Husam N.; Anthopoulos, Thomas D; McLachlan, Martyn

2015-01-01

By investigating the influence of key growth variables on the measured structural and electrical properties of SnO2 prepared by Pulsed Laser Deposition (PLD) we demonstrate fine control of intrinsic n-type defect formation. Variation of growth temperatures shows oxygen vacancies (VO) as the dominant defect which can be compensated for by thermal oxidation at temperatures > 500°C. As a consequence films with carrier concentrations in the range 1016-1019 cm-3 can be prepared by adjusting temperature alone. By altering the background oxygen pressure (PD) we observe a change in the dominant defect - from tin interstitials (Sni) at low PD (< 50 mTorr) to VO at higher oxygen pressures with similar ranges of carrier concentrations observed. Finally we demonstrate the importance of controlling the composition target surface used for PLD by exposing a target to > 100,000 laser pulses. Here carrier concentrations > 1x1020 cm-3 are observed that are attributed to high concentrations of Sni which cannot be completely compensated for by modifying the growth parameters.

Exploring and Controlling Intrinsic Defect Formation in SnO2 Thin Films

KAUST Repository

Porte, Yoann

2015-12-15

By investigating the influence of key growth variables on the measured structural and electrical properties of SnO2 prepared by Pulsed Laser Deposition (PLD) we demonstrate fine control of intrinsic n-type defect formation. Variation of growth temperatures shows oxygen vacancies (VO) as the dominant defect which can be compensated for by thermal oxidation at temperatures > 500°C. As a consequence films with carrier concentrations in the range 1016-1019 cm-3 can be prepared by adjusting temperature alone. By altering the background oxygen pressure (PD) we observe a change in the dominant defect - from tin interstitials (Sni) at low PD (< 50 mTorr) to VO at higher oxygen pressures with similar ranges of carrier concentrations observed. Finally we demonstrate the importance of controlling the composition target surface used for PLD by exposing a target to > 100,000 laser pulses. Here carrier concentrations > 1x1020 cm-3 are observed that are attributed to high concentrations of Sni which cannot be completely compensated for by modifying the growth parameters.

Experimental study of defect power reactor fuel. Final report

International Nuclear Information System (INIS)

Forsyth, R.S.; Jonsson, T.

1982-01-01

Two BWR fuel rods, one intact and one defect, with the same manufacturing and irradiation data have been examined in a comparative study. The defect rod has been irradiated in a defect condition during approximately one reactor cycle and has consequently some secondary defects. The defect rod has two penetrating defects at a distance of about 1.5 meters from each other. Comparison with the intact rod shows a large Cs loss from the defect rod, especially between the cladding defects, where the loss is measured to about 30 %. The leachibility in deionized water is higher for Cs, U and Cm for fuel from the defect rod. The leaching results are more complex for Sr-90, Pu and Am. The fuel in the defect rod has undergone a change of structure with gain growth and formation of oriented fuel structure. The cladding of the defect rod is hydrided locally in some parts of the lower part of the rod and furthermore over a more extended region near the end of the rod. (Authors)

Effect of hydrogen adsorption on the formation and annealing of Stone-Wales defects in graphene

Science.gov (United States)

Podlivaev, A. I.; Openov, L. A.

2015-12-01

The heights of energy barriers preventing the formation and annealing of Stone-Wales defects in graphene with a hydrogen atom adsorbed on the defect or in its immediate vicinity have been calculated using the atomistic computer simulation. It has been shown that, in the presence of hydrogen, both barriers are significantly lower than those in the absence of hydrogen. Based on the analysis of the potential energy surface, the frequency factors have been calculated for two different paths of the Stone-Wales transformation, and the temperature dependences of the corresponding annealing times of the defects have been found. The results obtained have been compared with the first-principles calculations and molecular dynamics data.

Nonlinear stability of source defects in the complex Ginzburg–Landau equation

International Nuclear Information System (INIS)

Beck, Margaret; Nguyen, Toan T; Sandstede, Björn; Zumbrun, Kevin

2014-01-01

In an appropriate moving coordinate frame, source defects are time-periodic solutions to reaction–diffusion equations that are spatially asymptotic to spatially periodic wave trains whose group velocities point away from the core of the defect. In this paper, we rigorously establish nonlinear stability of spectrally stable source defects in the complex Ginzburg–Landau equation. Due to the outward transport at the far field, localized perturbations may lead to a highly non-localized response even on the linear level. To overcome this, we first investigate in detail the dynamics of the solution to the linearized equation. This allows us to determine an approximate solution that satisfies the full equation up to and including quadratic terms in the nonlinearity. This approximation utilizes the fact that the non-localized phase response, resulting from the embedded zero eigenvalues, can be captured, to leading order, by the nonlinear Burgers equation. The analysis is completed by obtaining detailed estimates for the resolvent kernel and pointwise estimates for Green's function, which allow one to close a nonlinear iteration scheme. (paper)

Defect phase diagram for doping of Ga2O3

Science.gov (United States)

Lany, Stephan

2018-04-01

For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO2), and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor) center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO2) conditions. Considering further the stability constraints due to sublimation of molecular Ga2O, specific predictions of optimized pO2 and Si dopant concentrations are given. The incomplete passivation of dopant-defect complexes in β-Ga2O3 suggests a design rule for metastable doping above the solubility limit.

N+ ion-implantation-induced defects in ZnO studied with a slow positron beam

International Nuclear Information System (INIS)

Chen, Z Q; Sekiguchi, T; Yuan, X L; Maekawa, M; Kawasuso, A

2004-01-01

Undoped ZnO single crystals were implanted with multiple-energy N + ions ranging from 50 to 380 keV with doses from 10 12 to 10 14 cm -2 . Positron annihilation measurements show that vacancy defects are introduced in the implanted layers. The concentration of the vacancy defects increases with increasing ion dose. The annealing behaviour of the defects can be divided into four stages, which correspond to the formation and recovery of large vacancy clusters and the formation and disappearance of vacancy-impurity complexes, respectively. All the implantation-induced defects are removed by annealing at 1200 deg. C. Cathodoluminescence measurements show that the ion-implantation-induced defects act as nonradiative recombination centres to suppress the ultraviolet (UV) emission. After annealing, these defects disappear gradually and the UV emission reappears, which coincides with positron annihilation measurements. Hall measurements reveal that after N + implantation, the ZnO layer still shows n-type conductivity

Structure defects in malachite revealed by positron annihilation

International Nuclear Information System (INIS)

Geffroy, B.; Diallo, I.; Paulin, R.

1984-01-01

Positron lifetime is measured between 77 and 400 K in two malachite samples with different mineralogical structures. The complex spectrum found in zoned malachite reveals a microporosity which remains stable in this range of temperature. Besides, above 200 K, equilibrium defects appear. Their formation energy is estimated to be Esub(f) = 0.27 +- 0.02 eV [fr

Structure defects in malachite revealed by positron annihilation

Energy Technology Data Exchange (ETDEWEB)

Geffroy, B; Diallo, I; Paulin, R [Institut National des Sciences et Techniques Nucleaires, CEN/Saclay, 91 - Gif-sur-Yvette (France)

1984-01-01

Positron lifetime is measured between 77 and 400 K in two malachite samples with different mineralogical structures. The complex spectrum found in zoned malachite reveals a microporosity which remains stable in this range of temperature. Besides, above 200 K, equilibrium defects appear. Their formation energy is estimated to be Esub(f) = 0.27 +- 0.02 eV.

Investigation on the asymmetry of thermal condition and grain defect formation in the customary directional solidification process

International Nuclear Information System (INIS)

Ma, D; Wu, Q; Hollad, S; Bührig-Polaczek, A

2012-01-01

In the present study, the non-uniformity of the thermal condition and the corresponding grain defect formation in the customary Bridgman process were investigated. The casting clusters in radial alignment were directionally solidified in a Bridgman furnace. It was found that in the casting cluster, the shadow side facing the central rod was ineffectively heated in the hot zone and ineffectively cooled in the cooling zone during withdrawal, compared with the heater side facing the furnace heater. The metallographic examination of the simplified turbine blades exhibited that the platforms on the shadow side are very prone to stray grain formation, while the heater side reveals a markedly lower tendency for that. The asymmetric thermal condition causes the asymmetrical formation of these grain defects. This non-uniformity of the thermal condition should be minimized as far as possible, in order to effectively optimize the quality of the SC superalloy components.

Direct observation of cascade defect formation at low temperatures in ion-irradiated metals

International Nuclear Information System (INIS)

Muroga, T.; Hirooka, K.; Ishino, S.

1984-01-01

Direct transmission electron microscopy observations of cascade defect formation have been carried out in gold, Type 316 stainless steel, and aluminum irradiated by Al + , Ar - , and Xe + ions with energies between 80 and 400 keV. By utilizing a link of an ion accelerator to an electron microscope, in situ observations at low temperature (-150 0 C) have become possible. In gold, subcascade structures are clearly observed in all cases. Obvious dependence on projectile mass and energy is observed for cascade structure and vacancy clustering efficiency in gold and for defect visibility in aluminum and Type 316 stainless steel. A computer simulation calculation using MARLOWE shows subcascade distributions a little smaller in size and larger in number than the present observation

Oxide film defects in Al alloys and the formation of hydrogen- related porosity

International Nuclear Information System (INIS)

Griffiths, W D; Yue, Y; Gerrard, A J

2016-01-01

Double oxide film defects have also been held responsible for the origins of hydrogen porosity, where hydrogen dissolved in the Al melt passes into the interior atmosphere of the double oxide film defect causing it to inflate. However, this is in opposition to long- established evidence that H cannot readily diffuse through aluminium oxide. To investigate this further, samples of commercial purity Al were first degassed to remove their initial H content, and then heated to above their melting point and held in atmospheres of air and nitrogen respectively, to determine any differences in H pick-up. The experiment showed that samples held in an oxidising atmosphere, and having an oxide skin, picked up significantly less H than when the samples were held in a nitrogen atmosphere, which resulted in the formation of AlN in cracks in the oxide skin of the sample. It is suggested that double oxide film defects can give rise to hydrogen-related porosity, but this occurs more quickly when the oxygen in the original oxide film defect has been consumed by reaction with the surrounding melt and nitrogen reacts to form AlN, which is more permeable to H than alumina, more easily allowing the oxide film defect to give rise to a hydrogen pore. This is used to interpret results from an earlier synchrotron experiment, in which a small pore was seen to grow into a larger pore, while an adjacent large pore remained at a constant size. (paper)

Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

KAUST Repository

Venkatesh, S.

2015-01-07

Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (defect band formed due to oxygen deficiency related defect complexes. Mott\\'s theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.

Defects in the COG complex and COG-related trafficking regulators affect neuronal Golgi function.

Directory of Open Access Journals (Sweden)

Leslie K Climer

2015-10-01

Full Text Available The Conserved Oligomeric Golgi (COG complex is an evolutionarily conserved hetero-octameric protein complex that has been proposed to organize vesicle tethering at the Golgi apparatus. Defects in seven of the eight COG subunits are linked to Congenital Disorders of Glycosylation (CDG-type II, a family of rare diseases involving misregulation of protein glycosylation, alterations in Golgi structure, variations in retrograde trafficking through the Golgi and system-wide clinical pathologies. A troublesome aspect of these diseases are the neurological pathologies such as low IQ, microcephaly and cerebellar atrophy. The essential function of the COG complex is dependent upon interactions with other components of trafficking machinery, such as Rab-GTPases and SNAREs. COG-interacting Rabs and SNAREs have been implicated in neurodegenerative diseases like Alzheimer’s disease and Parkinson’s disease. Defects in Golgi maintenance disrupts trafficking and processing of essential proteins, frequently associated with and contributing to compromised neuron function and human disease. Despite the recent advances in molecular neuroscience, the subcellular bases for most neurodegenerative diseases are poorly understood. This article gives an overview of the potential contributions of the COG complex and its Rab and SNARE partners in the pathogenesis of different neurodegenerative disorders.

Point defects in dilute nitride III-N-As and III-N-P

International Nuclear Information System (INIS)

Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

2006-01-01

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in two most important dilute nitride systems-Ga(In)NAs grown on GaAs substrates and Ga(Al,In)NP grown on Si and GaP substrates. These results have led to the identification of defect complexes in the alloys, involving intrinsic defects such as As Ga antisites and Ga i self-interstitials. They have also shed light on formation mechanisms of the defects and on their role in non-radiative carrier recombination that is harmful to the performance of potential optoelectronic and photonic devices based on these dilute nitrides

O vacancy formation in (Pr/Gd)BaCo2O5.5 and the role of antisite defects

KAUST Repository

Omotayo Akande, Salawu; Chroneos, Alexander; Schwingenschlö gl, Udo

2017-01-01

that O vacancy formation is significantly easier in PrBaCo2O5.5 than in GdBaCo2O5.5, the difference in formation energy being hardly modified by antisite defects. While pyramidally coordinated Co atoms are not affected, we show that the presence

N{sup +} ion-implantation-induced defects in ZnO studied with a slow positron beam

Energy Technology Data Exchange (ETDEWEB)

Chen, Z Q [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan); Sekiguchi, T [Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Yuan, X L [Nanomaterials Laboratory, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Maekawa, M [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan); Kawasuso, A [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan (Japan)

2004-01-21

Undoped ZnO single crystals were implanted with multiple-energy N{sup +} ions ranging from 50 to 380 keV with doses from 10{sup 12} to 10{sup 14} cm{sup -2}. Positron annihilation measurements show that vacancy defects are introduced in the implanted layers. The concentration of the vacancy defects increases with increasing ion dose. The annealing behaviour of the defects can be divided into four stages, which correspond to the formation and recovery of large vacancy clusters and the formation and disappearance of vacancy-impurity complexes, respectively. All the implantation-induced defects are removed by annealing at 1200 deg. C. Cathodoluminescence measurements show that the ion-implantation-induced defects act as nonradiative recombination centres to suppress the ultraviolet (UV) emission. After annealing, these defects disappear gradually and the UV emission reappears, which coincides with positron annihilation measurements. Hall measurements reveal that after N{sup +} implantation, the ZnO layer still shows n-type conductivity.

Influence of the parameters of pulsed electron irradiation on the efficiency of formation of defects in silicon

International Nuclear Information System (INIS)

Abdusattarov, A.G.; Emtsev, V.V.; Mashovets, T.V.

1989-01-01

There is as yet no agreement about the mechanism of the influence of the rate of irradiation on the rate of radiation-defect formation in semiconductors. In the case of silicon some authors attribute this mechanism to the influence of excitation of the electron subsystem on the processes resulting in the formation of secondary defects. Other authors are of the opinion that the rate of excitation of the electron subsystem influences the ratio of the probabilities of separation and annihilation of components of a Frenkel pair. A more careful analysis of this situation however forces are to revise this point of view. The authors consider in greater detail the process of homogeneous annihilation of the components of a Frenkel pair in silicon

Peroxy defects in Rocks and H2O2 formation on the early Earth

Science.gov (United States)

Gray, A.; Balk, M.; Mason, P.; Freund, F.; Rothschild, L.

2013-12-01

An oxygen-rich atmosphere appears to have been a prerequisite for complex life to evolve on Earth and possibly elsewhere in the Universe. The question is still shrouded in uncertainty how free oxygen became available on the early Earth. Here we study processes of peroxy defects in silicate minerals which, upon weathering, generate mobilized electronic charge carriers resulting in oxygen formation in an initially anoxic subsurface environment. Reactive Oxygen Species (ROS) are precursors to molecular oxygen during this process. Due to their toxicity they may have strongly influenced the evolution of life. ROS are generated during hydrolysis of peroxy defects, which consist of pairs of oxygen anions. A second pathway for formation occurs during (bio) transformations of iron sulphide minerals. ROS are produced and consumed by intracellular and extracellular reactions of Fe, Mn, C, N, and S species. We propose that despite an overall reducing or neutral oxidation state of the macroenvironment and the absence of free O2 in the atmosphere, microorganisms on the early Earth had to cope with ROS in their microenvironments. They were thus under evolutionary pressure to develop enzymatic and other defenses against the potentially dangerous, even lethal effects of ROS and oxygen. We have investigated how oxygen might be released through weathering and test microorganisms in contact with rock surfaces. Our results show how early Life might have adapted to oxygen. Early microorganisms must have "trained" to detoxify ROS prior to the evolution of aerobic metabolism and oxygenic photosynthesis. A possible way out of this dilemma comes from a study of igneous and high-grade metamorphic rocks, whose minerals contain a small but significant fraction of oxygen anions in the valence state 1- , forming peroxy links of the type O3Si-OO-SiO3 [1, 2]. As water hydrolyzes the peroxy links hydrogen peroxide, H2O2, forms. Continued experimental discovery of H2O2 formation at rock

Phenomenological Model Describing the Formation of Peeling Defects on Hot-Rolled Duplex Stainless Steel 2205

Science.gov (United States)

Yong-jun, Zhang; Hui, Zhang; Jing-tao, Han

2017-05-01

The chemical composition, morphology, and microstructure of peeling defects formed on the surface of sheets from steel 2205 under hot rolling are studied. The microstructure of the surface is analyzed using scanning electron and light microscopy. The zones affected are shown to contain nonmetallic inclusions of types Al2O3 and CaO - SiO2 - Al2O3 - MgO in the form of streak precipitates and to have an unfavorable content of austenite, which causes decrease in the ductility of the area. The results obtained are used to derive a five-stage phenomenological model of formation of such defects.

Formation of radiation-induced defects and their influence on tritium extraction from lithium silicates in out-of-pile experiments

International Nuclear Information System (INIS)

Abramenkovs, A.A.; Tiliks, J.E.

1991-01-01

Formation and properties of radiation-induced defects and radiolysis products in lithium silicates irradiated in nuclear reactor till absorbed doses 1000 MGy were studied. Radiation-induced defects (RD) and radiolysis products (RP) were qualitatively and quantitatively determinated by methods of chemical scavengers (MHS), electron-spin resonance (ESR) and optical spectroscopy. Colloidal silicon and lithium, lithium and silicon oxides, oxygen, silicon and lithium peroxides are the final products of the lithium silicates radiolysis at absorbed energy doses D abs = 1000 MGy. The concentration of radiation defects and products of radiolysis strongly depend on the temperature of irradiation, humidity, granural size. The thermostimulated extraction of tritiated water (95-98% of the released tritium is in chemical form of water) from lithium silicates ceramics proceeds according to two independent mechanisms: a) chemidesorption of surface localized tritiated water (the first order chemical reaction); b) formation of the tritium water molecules limited by triton diffusion to the near-surface layer of grains. It has been found that the concentration of radiation-induced defects considerably affects the tritium localization and releasing processes from lithium silicates. (orig.)

Effect of carbon additions on the as-cast microstructure and defect formation of a single crystal Ni-based superalloy

International Nuclear Information System (INIS)

Al-Jarba, K.A.; Fuchs, G.E.

2004-01-01

In an effort to reduce grain defects in large single crystal Ni-base superalloy components, carbon is intentionally added. In this study, the effect of carbon additions on the microstructure and solidification defect formation of a model Ni-based superalloy, LMSX-1, was examined. The results show that the tendency of the alloy to form all types of solidification defects decreased as the carbon content increased. The as-cast microstructures also exhibited a decrease in the amount of γ-γ' eutectic structure and an increase in the volume fraction of carbides and porosity, as the carbon content was increased. The carbides formed in these alloys were mostly of script-type MC carbides which formed continuous, dendritic networks in the interdendritic region. Microprobe analysis of the as-cast structures showed that the partitioning coefficients did not change with carbon additions. Therefore, the reduction in defect formation with increasing carbon content could not be attributed to changes in segregation behavior of alloying elements. Instead, the presence of these carbides in the interdendritic regions of the alloy appeared to have prevented the thermosolutal fluid flow

Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation

DEFF Research Database (Denmark)

Boturchuk, Ievgen; Scheffler, Leopold Julian; Larsen, Arne Nylandsted

2018-01-01

Ohmic contact formation to n-type GaN often involves high temperature steps, for example sintering at about 800 °C in the case of Ti-based contacts. Such processing steps might cause changes in the distribution, concentration, and properties of the defects. The present work aims at contributing...... to the knowledge about defect evolution in GaN upon processing at different temperatures. The processing temperatures are selected according to fabrication procedures for commonly used ohmic contacts to n-GaN: 300 °C (In-based), 550 °C (Ta-based), and 800 °C (Ti-based). Properties and concentration of the defects...

Defect phase diagram for doping of Ga2O3

Directory of Open Access Journals (Sweden)

Stephan Lany

2018-04-01

Full Text Available For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn, a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T, O partial pressures (pO2, and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO2 conditions. Considering further the stability constraints due to sublimation of molecular Ga2O, specific predictions of optimized pO2 and Si dopant concentrations are given. The incomplete passivation of dopant-defect complexes in β-Ga2O3 suggests a design rule for metastable doping above the solubility limit.

O vacancy formation in (Pr/Gd)BaCo2O5.5 and the role of antisite defects

KAUST Repository

Omotayo Akande, Salawu

2017-04-20

In search for materials for intermediate temperature solid oxide fuel cells, (Pr/Gd)BaCo2O5.5 is investigated by first principles calculations. Antisite defects are considered as they may modify the electronic and O diffusion properties but are rarely studied in double perovskite oxides. Octahedrally coordinated Co atoms are shown to realize intermediate and high spin states for PrBaCo2O5.5 and GdBaCo2O5.5, respectively, while pyramidally coordinated Co atoms always have high spin. It turns out that O vacancy formation is significantly easier in PrBaCo2O5.5 than in GdBaCo2O5.5, the difference in formation energy being hardly modified by antisite defects. While pyramidally coordinated Co atoms are not affected, we show that the presence of antisite defects causes parts of the octahedrally coordinated Co atoms to switch from intermediate to high spin.

Defective tubulin organization and proplatelet formation in murine megakaryocytes lacking Rac1 and Cdc42

DEFF Research Database (Denmark)

Pleines, Irina; Dütting, Sebastian; Cherpokova, Deya

2013-01-01

Blood platelets are anuclear cell fragments that are essential for blood clotting. Platelets are produced by bone marrow megakaryocytes (MKs), which extend protrusions, or so-called proplatelets, into bone marrow sinusoids. Proplatelet formation requires a profound reorganization of the MK actin...... normally in vivo but displayed highly abnormal morphology and uncontrolled fragmentation. Consistently, a lack of Rac1/Cdc42 virtually abrogated proplatelet formation in vitro. Strikingly, this phenotype was associated with severely defective tubulin organization, whereas actin assembly and structure were...

Natural disease course and genotype-phenotype correlations in Complex I deficiency caused by nuclear gene defects

DEFF Research Database (Denmark)

Koene, S; Rodenburg, R J; van der Knaap, M S

2012-01-01

cases and 126 from literature) with mutations in nuclear genes encoding structural complex I proteins or those involved in its assembly. Complex I deficiency caused by a nuclear gene defect is usually a non-dysmorphic syndrome, characterized by severe multi-system organ involvement and a poor prognosis...

Lessons Learned from Delayed Versus Immediate Microsurgical Reconstruction of Complex Maxillectomy and Midfacial Defects: Experience in a Tertiary Center in Mexico.

Science.gov (United States)

Santamaria, Eric; de la Concha, Erika

2016-10-01

Microsurgical reconstruction of complex midfacial and maxillectomy defects is among the most challenging procedures in plastic surgery, and it often requires composite flaps to improve functional and aesthetic results. Various factors have been identified as having influence in the outcome of microsurgical reconstruction. In this article, the authors present their experience with immediate and delayed reconstruction of complex maxillectomy defects in a tertiary center in Mexico. The authors present a total of 37 patients with microsurgical reconstruction of a complex maxillectomy defect; 13 patients had immediate and 24 had delayed reconstructions. The authors recommend doing immediate reconstruction when feasible. Copyright © 2016 Elsevier Inc. All rights reserved.

Recombinant human IGF-1 produced by transgenic plant cell suspension culture enhances new bone formation in calvarial defects.

Science.gov (United States)

Poudel, Sher Bahadur; Bhattarai, Govinda; Kook, Sung-Ho; Shin, Yun-Ji; Kwon, Tae-Ho; Lee, Seung-Youp; Lee, Jeong-Chae

2017-10-01

Transgenic plant cell suspension culture systems have been utilized extensively as convenient and efficient expression systems for the production of recombinant human growth factors. We produced insulin-like growth factor-1 using a plant suspension culture system (p-IGF-1) and explored its effect on new bone formation in calvarial defects. We also compared the bone regenerating potential of p-IGF-1 with commercial IGF-1 derived from Escherichia coli (e-IGF-1). Male C57BL/6 mice underwent calvarial defect surgery, and the defects were loaded with absorbable collagen sponge (ACS) only (ACS group) or ACS impregnated with 13μg of p-IGF-1 (p-IGF-1 group) or e-IGF-1 (e-IGF-1 group). The sham group did not receive any treatment with ACS or IGFs after surgery. Live μCT and histological analyses showed critical-sized bone defects in the sham group, whereas greater bone formation was observed in the p-IGF-1 and e-IGF-1 groups than the ACS group both 5 and 10weeks after surgery. Bone mineral density, bone volume, and bone surface values were also higher in the IGF groups than in the ACS group. Local delivery of p-IGF-1 or e-IGF-1 more greatly enhanced the expression of osteoblast-specific markers, but inhibited osteoclast formation, in newly formed bone compared with ACS control group. Specifically, p-IGF-1 treatment induced higher expression of alkaline phosphatase, osteocalcin, and osteopontin in the defect site than did e-IGF-1. Furthermore, treatment with p-IGF-1, but not e-IGF-1, increased mineralization of MC3T3-E1 cells, with the attendant upregulation of osteogenic marker genes. Collectively, our findings suggest the potential of p-IGF-1 in promoting the processes required for bone regeneration. Copyright © 2017. Published by Elsevier Ltd.

Effect of germanium doping on the annealing characteristics of oxygen and carbon-related defects in Czochralski silicon

International Nuclear Information System (INIS)

Londos, C. A.; Andrianakis, A.; Sgourou, E. N.; Emtsev, V.; Ohyama, H.

2010-01-01

This paper is devoted to the annealing studies of defects produced in carbon-rich Ge-doped Czochralski-grown Si (Cz-Si) by 2 MeV electron irradiation. The annealing temperature of vacancy-oxygen (VO) complexes, carbon interstitial-oxygen interstitial (C i O i ), and carbon interstitial-carbon substitutional (C i C s ) pairs as well as the formation temperature of vacancy-two oxygen (VO 2 ) complexes are monitored as a function of Ge concentration. It has been established that the annealing of C i O i and C i C s defects remains practically unaffected by the Ge presence, whereas the annealing temperature of VO defects and the formation temperature of VO 2 complexes are substantially lowered at Ge concentrations larger than 1x10 19 cm -3 . The hydrostatic component of elastic strains introduced by Ge atoms in the Si crystal lattice was calculated. It appears to be very small, at least insufficient to exert a pronounced effect upon the annealing behavior of radiation-produced defects. This conclusion is in line with what is observed for the C i O i and C i C s species. In the case of VO, whose annealing process in Cz-Si is concurrently conducted by two reaction paths VO+O i →VO 2 and VO+Si I →O i , we suggest that the latter reaction in Ge-doped Cz-Si is enhanced by emitting self-interstitials (Si I ) from loosely bound self-interstitial clusters predominantly formed around Ge impurity atoms. As a result, the liberation of self-interstitials at lower annealing temperatures leads to an enhanced annealing of VO defects. An enhanced formation of VO 2 complexes at lower temperatures is also discussed in terms of other reactions running in parallel with the reaction VO+Si I →O i .

Lattice stability and formation energies of intrinsic defects in Mg2Si and Mg2Ge via first principles simulations

International Nuclear Information System (INIS)

Jund, Philippe; Viennois, Romain; Tédenac, Jean-Claude; Colinet, Catherine; Hug, Gilles; Fèvre, Mathieu

2013-01-01

We report an ab initio study of the semiconducting Mg 2 X (with X = Si, Ge) compounds and in particular we analyze the formation energies of the different point defects with the aim of understanding the intrinsic doping mechanisms. We find that the formation energy of Mg 2 Ge is 50% larger than that of Mg 2 Si, in agreement with the experimental tendency. From a study of the stability and the electronic properties of the most stable defects, taking into account the growth conditions, we show that the main cause of the n doping in these materials comes from interstitial magnesium defects. Conversely, since other defects acting like acceptors such as Mg vacancies or multivacancies are more stable in Mg 2 Ge than in Mg 2 Si, this explains why Mg 2 Ge can be of n or p type, in contrast to Mg 2 Si. The finding that the most stable defects are different in Mg 2 Si and Mg 2 Ge and depend on the growth conditions is important and must be taken into account in the search for the optimal doping to improve the thermoelectric properties of these materials.

Monti’s procedure as an alternative technique in complex urethral distraction defect

Directory of Open Access Journals (Sweden)

Jalil Hosseini

2010-06-01

Full Text Available PURPOSE: Pelvic fracture urethral distraction defect is usually managed by the end to end anastomotic urethroplasty. Surgical repair of those patients with post-traumatic complex posterior urethral defects, who have undergone failed previous surgical treatments, remains one of the most challenging problems in urology. Appendix urinary diversion could be used in such cases. However, the appendix tissue is not always usable. We report our experience on management of patients with long urethral defect with history of one or more failed urethroplasties by Monti channel urinary diversion. MATERIALS AND METHODS: From 2001 to 2007, we evaluated data from 8 male patients aged 28 to 76 years (mean age 42.5 in whom the Monti technique was performed. All cases had history of posterior urethral defect with one or more failed procedures for urethral reconstruction including urethroplasty. A 2 to 2.5 cm segment of ileum, which had a suitable blood supply, was cut. After the re-anastomosis of the ileum, we closed the opened ileum transversely surrounding a 14-16 Fr urethral catheter using running Vicryl sutures. The newly built tube was used as an appendix during diversion. RESULTS: All patients performed catheterization through the conduit without difficulty and stomal stenosis. Mild stomal incontinence occurred in one patient in the supine position who became continent after adjustment of the catheterization intervals. There was no dehiscence, necrosis or perforation of the tube. CONCLUSION: Based on our data, Monti’s procedure seems to be a valuable technique in patients with very long complicated urethral defect who cannot be managed with routine urethroplastic techniques.

Various Stone-Wales defects in phagraphene

Science.gov (United States)

Openov, L. A.; Podlivaev, A. I.

2016-08-01

Various Stone-Wales defects in phagraphene, which is a graphene allotrope, predicted recently are studied in terms of the nonorthogonal tight-binding model. The energies of the defect formation and the heights of energy barriers preventing the formation and annealing of the defects are found. Corresponding frequency factors in the Arrhenius formula are calculated. The evolution of the defect structure is studied in the real-time mode using the molecular dynamics method.

Investigation of impurity defects in α-iron by molecular dynamics method

International Nuclear Information System (INIS)

Kevorkyan, Yu.R.

1986-01-01

Investigation of the configuration of impurity defects in α-iron by the molecular dynamics method is presented. The Jhonson model potential has been used to calculate the interaction of matrix atoms. The impurity-matrix atom interaction is described by the same form of the potential shifted along the axis of interatomic distances for a definite value. The correspondence between the shift value and change in the radius of the impurity defect is established on the basis of calculation of the relaxation volume. Possible configurations of the impurity - interstitial matrix atom complexes are obtained for the given model of the impurity defect, dimensional boundaries of possible transitions between different configurations are determined. Formation and bound energies, relaxation volumes of impurity defects are calculated

Omphalocele, exstrophy of cloaca, imperforate anus, and spinal defect complex, multiple major reconstructive surgeries needed

Directory of Open Access Journals (Sweden)

Nada Neel

2018-01-01

Full Text Available OEIS complex is a rare combination of serious birth defects including omphalocele, exstrophy of cloaca, imperforate anus, and spinal defects. The aim of managements has shifted from merely providing survival to improve patient outcomes and quality of life with higher level of physical and social independence. Multiple complicated reconstructive surgeries always needed for achieving the goals of treatment. In this case report, we aimed to present our surgical approach for this rare abnormality to achieve functionally and socially acceptable outcome.

Complex of GRAD programs for analytical calculation of radiation defects generation in solids

International Nuclear Information System (INIS)

Suvorov, A.L.; Zabolotnyj, V.T.; Babaev, V.P.

1989-01-01

Complex of programms for analytical calculation of generation of radiation defects (GRAD) in solids, and also of their recombination during cascade area relaxation and postradiation annealing, of mass removing by atomic collisions in volume (mixing) and through the surface (sputtering), of structure - phase state and property changes is suggested. The complex volume is less than 10 KBytes and it may be realized by computer of any type. Satisfactional agreement with more wide range of experimental data in comparison with tradition models is obtained. 27 refs.; 2 figs

The Effect of Aloe, Gelfoam, Plaster on Bone Formation in applying to the bone defect

International Nuclear Information System (INIS)

Choi, Eui Hwan; Kim, Su Gwan

1999-01-01

This study was to evaluate the effects of Aloe, Gelfoam, and Plaster of Paris on bone healing. Four experimental defects were created for placement of the three materials in the right femur of dogs. One defect served as an empty control site. The evaluation was performed at 1-, 6-, and 12-weeks by light microscopy and NIH image program. Radiographic and Histologic examinations showed new bone formation in the presence of Aloe, Gelfoam, and Plaster of Paris and similar bone healing reactions. On the basis of these findings, it was concluded that Aloe, Gelfoam, and Plaster of Paris may be adequate agents for use in bone procurement.

Curcumin complexation with cyclodextrins by the autoclave process: Method development and characterization of complex formation.

Science.gov (United States)

Hagbani, Turki Al; Nazzal, Sami

2017-03-30

One approach to enhance curcumin (CUR) aqueous solubility is to use cyclodextrins (CDs) to form inclusion complexes where CUR is encapsulated as a guest molecule within the internal cavity of the water-soluble CD. Several methods have been reported for the complexation of CUR with CDs. Limited information, however, is available on the use of the autoclave process (AU) in complex formation. The aims of this work were therefore to (1) investigate and evaluate the AU cycle as a complex formation method to enhance CUR solubility; (2) compare the efficacy of the AU process with the freeze-drying (FD) and evaporation (EV) processes in complex formation; and (3) confirm CUR stability by characterizing CUR:CD complexes by NMR, Raman spectroscopy, DSC, and XRD. Significant differences were found in the saturation solubility of CUR from its complexes with CD when prepared by the three complexation methods. The AU yielded a complex with expected chemical and physical fingerprints for a CUR:CD inclusion complex that maintained the chemical integrity and stability of CUR and provided the highest solubility of CUR in water. Physical and chemical characterizations of the AU complexes confirmed the encapsulated of CUR inside the CD cavity and the transformation of the crystalline CUR:CD inclusion complex to an amorphous form. It was concluded that the autoclave process with its short processing time could be used as an alternate and efficient methods for drug:CD complexation. Copyright © 2017 Elsevier B.V. All rights reserved.

Complex formation of americium (III) with humic acid

International Nuclear Information System (INIS)

Zhang Yingjie; Zhao Xin; Wen Liansheng; Lin Zhangji

2004-01-01

The presence of humic substances in natural waters will modify the migration behavior of actinides in the geosphere due to the strong reaction properties of these ligands with actinides. Therefore, the possible reactions of humic acid with actinides have been studied widely in recent years. The complex formation of Am (III) with humic acid is studied with solvent extraction technique in this paper. The experiments are performed in the pH range from 4.0 to 8.0 in 0.1 M NaClO 4 solution at ambient temperature. Experimental results show that the complex formation constants of Am (III) with humic acid are varied with the variation of pH value in solution. 1:2 complex is obtained in the experiments and the complex formation constants determined at each pH are: lgβ 1 =6.56±0.05, lgβ 2 =10.77±0.31 at pH=4.0; lgβ 1 =7.94±0.11, lgβ 2 =11.80±0.21 at pH=5.0; lgβ 1 =10.74±0.28, lgβ 2 =12.88±0.49 at pH=6.0; lgβ 1 =12.85±0.30, lgβ 2 =14.80±0.62 at pH=7.0; lgβ 1 =14.88±0.48, lgβ 2 =15.65±0.69 at pH=8.0, respectively. The dependence of the complex of the complex formation constant on pH is: lgβ 1 =2.16(±0.98)pH-2.34(±1.03), lgβ 2 =1.28(±1.04)pH+5.52(±1.21), respectively. (author)

Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

Science.gov (United States)

Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

2017-09-01

It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

Formation of oxygen-related defects enhanced by fluorine in BF{sub 2}{sup +}-implanted Si studied by a monoenergetic positron beam

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Moriya, Tsuyoshi; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Kawano, Takao; Nagai, Ryo; Umeda, Kazunori

1995-12-01

Defects in 25-keV BF{sub 2}{sup +}- or As{sup +}-implanted Si specimens were probed by a monoenergetic positron beam. For the As{sup +}-implanted specimen, the depth profile of defects was obtained from measurements of Doppler broadening profiles as a function of incident positron energy. The major species of the defects was identified as divacancies. For ion-implanted specimens after annealing treatment, oxygen-related defects were found to be formed. For the BF{sub 2}{sup +}-implanted specimen before annealing treatment, such defects were formed in the subsurface region, where oxygen atoms were implanted by recoil from oxide films. This was attributed to enhanced formation of oxygen-related defects by the presence of F atoms. (author)

Investigation of γ-radiation defect formation at the Si-SiO2 interface

International Nuclear Information System (INIS)

Zaynabidinov, S.; Yulchiev, Sh.; Aliev, R.

2004-01-01

Full text: In work the results of an experimental research of process radiating defects formation on border are submitted undressed Si-SiO 2 at γ-radiation of the silicon MOS structures. As against similar researches the basic attention is given on the analysis of generation-recombination characteristics of structures, that allowed to establish character of the defects formation both on border undressed Si-SiO 2 , and in about border of Si. In experiments the structures received by thermal oxidation at T=1000 deg. C in environment of dry oxygen n-Si substrates with specific resistance ρ=0.3 Ω·cm are used. The thickness of oxygen layer made ∼0.1 μm. The test MOS-structures with an aluminium electrode and area ∼0.01 cm 2 irradiated with γ-quanta from the 60 Co source by a dose of 10 6 rad. The choice of a dose of an radiation is caused by that at such dose the essential increase of concentration of superficial defects is observed, and at the same time there are no significant changes of parameters of a substrate because of formation of point defects in volume of silicon. The generation characteristics of structures such, as speed of superficial generation s and time of life τ g of carriers of a charge in about surface before and after an radiation defined by a method isothermal relaxation of nonequilibrium high-frequency capacity. The relaxation of nonequilibrium capacity registered at submission on translating structure in a condition of deeper inversion. Such mode of measurement allows to neglect the contribution which is brought in recharged of superficial condition in superficial generation currents. Are received relaxation dependence of structures before and after an radiation, and also spectra of distribution of density of superficial condition on width of the forbidden zone Si dN ss /dE. The increase at 12-15 of time of concentration of superficial condition with E=E c -(0.18±0.03) eV in the irradiated structures is established. Such condition is

Molecular dynamics simulation on the formation and annihilation behaviors of radiation defects in Li2O

International Nuclear Information System (INIS)

Takuji Oda; Satoru Tanaka; Yasuhisa Oya

2006-01-01

The influence of radiation defects is one of the main factors that determine tritium release behavior from blanket breeding materials in fusion reactors. Classical molecular dynamics simulation (MD) is a powerful technique to investigate the radiation damage processes, because it can provide atomic-scale information on the defects. In this study, we conducted radiation simulation for Li 2 O using MD and analyzed formation and annihilation behaviors of radiation defects, as a fundamental research for radiation response of Li-containing oxides. Buckingham type two-body potential model was used. In order to remove the unphysical impulsive force at short inter-ionic distances in Buckingham model, each potential function was connected to that of the ZBL potential models at around 0.8 A. NEV ensemble was employed with the initial simulation temperature of 0 K. 10 x 10 x 10 supercell consisting of 4000 Li 2 O was used as a unit cell under 3D periodic boundary conditions. Radiation simulation was initiated by introducing an energy of a certain direction to an ion, as a displacement energy. The lowest displacement energy by which a defect was created and survived beyond 5 ps was regarded as the threshold energy. 42 and 21 displacement directions were surveyed for Li and O, respectively, based on the symmetry of the Li 2 O crystal. In both Li and O defect formations, [100] displacement shows significantly lower threshold energy than [111] displacement. Li defects were easily created than O defects almost in all directions. In fact, the average threshold energy except [111] displacement, which possesses extremely high threshold energy, was 21 eV for Li and 49 eV for O. In some cases, no defect could survive beyond 5 ps even by higher displacement energies than the threshold energy, due to the self-annealing effect. The self-annealing completed basically within 1 ps after introduction of displacement energy. At around this time, velocity distribution of all ions in the system

Investigation of microstructure and V-defect formation inInxGa1-xN/GaN MQW grown using temperature-gradient MOCVD

Energy Technology Data Exchange (ETDEWEB)

Johnson, M.C.; Liliental-Weber, Z.; Zakharov, D.N.; McCready,D.E.; Jorgenson, R.J.; Wu, J.; Shan, W.; Bourret-Courchesne, E.D.

2004-11-19

Temperature-gradient Metalorganic Chemical Vapor Deposition was used to deposit In{sub x}Ga{sub 1-x}N/GaN multiple quantum well structures with a concentration gradient of indium across the wafer. These multiple quantum well structures were deposited on low defect density (2 x 10{sup 8} cm{sup -2}) GaN template layers for investigation of microstructural properties and V-defect (pinhole) formation. Room temperature photoluminescence and photomodulated transmission were used for optical characterization which show a systematic decrease in emission energy for a decrease in growth temperature. Triple-axis X-ray diffraction, scanning electron microscopy and cross-section transmission electron microscopy were used to obtain microstructural properties of different regions across the wafer. Results show that there is a decrease in crystal quality and an increase in V-defect formation with increasing indium concentration. A direct correlation was found between V-defect density and growth temperature due to increased strain and indium segregation for increasing indium concentration.

Cardiac fusion and complex congenital cardiac defects in thoracopagus twins: diagnostic value of cardiac CT

Energy Technology Data Exchange (ETDEWEB)

Goo, Hyun Woo [University of Ulsan College of Medicine, Asan Medical Center, Department of Radiology and Research Institute of Radiology, Seoul (Korea, Republic of); Park, Jeong-Jun [University of Ulsan College of Medicine, Asan Medical Center, Department of Pediatric Cardiac Surgery, Seoul (Korea, Republic of); Kim, Ellen Ai-Rhan [University of Ulsan College of Medicine, Asan Medical Center, Division of Neonatology, Department of Pediatrics, Seoul (Korea, Republic of); Won, Hye-Sung [University of Ulsan College of Medicine, Asan Medical Center, Department of Obstetrics and Gynecology, Seoul (Korea, Republic of)

2014-09-15

Most thoracopagus twins present with cardiac fusion and associated congenital cardiac defects, and assessment of this anatomy is of critical importance in determining patient care and outcome. Cardiac CT with electrocardiographic triggering provides an accurate and quick morphological assessment of both intracardiac and extracardiac structures in newborns, making it the best imaging modality to assess thoracopagus twins during the neonatal period. In this case report, we highlight the diagnostic value of cardiac CT in thoracopagus twins with an interatrial channel and complex congenital cardiac defects. (orig.)

complex formation of americium (III) with humic acid

International Nuclear Information System (INIS)

Zhang Yingjie; Zhao Xin; Wei Liansheng; Lin Zhangji

1998-01-01

The presence of humic substances in natural waters will modify the migration behavior of actinides in the geosphere due to the strong reaction properties of these ligands with actinides. Therefore, the possible reactions of humic acid with actinides have been studied widely in recent years. The complex formation of Am(III) with humic acid is studied with solvent extraction technique. The experiments are performed in the pH range from 4.0 to 8.0 in 0.1 mol/kg NaClO 4 solution at ambient temperature. Experimental results show that the complex formation constants of Am(III) with humic acid are varied with the variation of pH value in solution. 1:2 complex is obtained in the experiments and the complex formation constants determined at each pH are: lgβ 1 = 6.56 +- 0.05, lgβ 2 = 10.77 +- 0.31 at pH 4.0. lgβ 1 = 7.94 +- 0.11, lgβ 2 = 11.80 +- 0.21 at pH = 5.0. lgβ 1 = 10.74 +- 0.28, lgβ 2 = 12.88 +- 0.49 at pH = 6.0. lgβ 1 = 12.85 +- 0.30, lgβ 2 = 14.80 +- 0.62 at pH = 7.0. lgβ 1 = 14.88 +- 0.48, lgβ 2 = 15.65 +- 0.69 at pH = 8.0, respectively. The dependence of the complex formation constant on pH is: lgβ 1 = 2.16 (+-0.98)pH-2.34(+-0.93),lgβ 2 1.28(+-1.04)pH+5.52(+-1.21), respectively

Geology of the Biwabik Iron Formation and Duluth Complex.

Science.gov (United States)

Jirsa, Mark A; Miller, James D; Morey, G B

2008-10-01

The Biwabik Iron Formation is a approximately 1.9 billion year-old sequence of iron-rich sedimentary rocks that was metamorphosed at its eastern-most extent by approximately 1.1 billion year-old intrusions of the Duluth Complex. The metamorphic recrystallization of iron-formation locally produced iron-rich amphiboles and other fibrous iron-silicate minerals. The presence of these minerals in iron-formation along the eastern part of what is known as the Mesabi Iron Range, and their potential liberation by iron mining has raised environmental health concerns. We describe here the geologic setting and mineralogic composition of the Biwabik Iron Formation in and adjacent to the contact metamorphic aureole of the Duluth Complex. The effects of metamorphism are most pronounced within a few kilometers of the contact, and decrease progressively away from it. The contact aureole has been divided into four metamorphic zones-each characterized by the composition and crystal structure of the metamorphic minerals it contains. The recrystallization of iron-formation to iron-rich amphibole minerals (grunerite and cummingtonite) and iron-pyroxene minerals (hedenbergite and ferrohypersthene) is best developed in zones that are most proximal to the Duluth Complex contact.

Ternary complex formation at mineral/solution interfaces

International Nuclear Information System (INIS)

Leckie, J.O.

1995-01-01

Adsorption of trace concentrations of radionuclides and heavy metals from aqueous solution is dependent on pH, absorbent and adsorbate concentration, and speciation of the metal in solution. In particular, complexation of metal ions by organic and inorganic ligands can dramatically alter adsorption behavior compared to ligand-free systems. The presence of complexing ligands can cause the formation of ''metal like'' or ''ligand like'' ternary surface complexes depending on whether adsorption of the ternary complex increases or decreases with increasing pH, respectively. Examples of ternary surface complexes behaving ''metal like'' include uranyl-EDTA surface complexes on goethite, neptunyl-EDTA surface complexes on hematite and neptunyl-humic surface complexes on gibbsite. Examples of ''ligand like'' ternary surface complexes include uranyl-carbonato and neptunyl-carbonato surface complexes on iron oxides. The effects of complex solutions and multimineralic systems are discussed. (authors). 39 refs., 16 figs., 8 tabs

Radiation defects in lithium fluoride induced by heavy ions

Energy Technology Data Exchange (ETDEWEB)

Trautmann, C.; Schwartz, K.; Steckenreiter, T. [Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany); Costantini, J.M. [CEA Centre d`Etudes de Bruyeres-le-Chatel, 91 (France). DPTA/SPMC; Toulemonde, M. [Centre Interdisciplinaire de Recherches avec les Ions Lourds (CIRIL), 14 - Caen (France)

1998-07-01

Single crystals of lithium fluoride were irradiated with various species of heavy ions in the energy regime between 1 and 30 MeV/u. The induced radiation damage was studied with techniques such as optical absorption spectroscopy, small-angle x-ray scattering, chemical etching and profilometry, complemented by annealing experiments. Clear evidence is given for a complex track structure and defect morphology. Single defects such as F-centers are produced in a large halo of several tens of nanometers around the ion trajectory. The defect creation in this zone is similar to that under conventional radiation. For heavy ions above a critical energy loss of 10 keV/nm, new effects occur within a very small core region of 2-4 nm in diameter. The damage in this zone is responsible for chemical etching and for a characteristic anisotropic x-ray scattering. It is assumed that in this core, complex defect aggregates (e.g., cluster of color centers, molecular anions and vacancies) are created. Their formation is only slightly influenced by the irradiation temperature and takes place even at 15 K where diffusion processes of primary defects are frozen. Furthermore, irradiation with heavy ions leads to pronounced swelling effects which can be related to an intermediate zone of around 10 nm around the ion path. (orig.) 40 refs.

Electronic excitations in metallic systems: from defect annihilation to track formation

International Nuclear Information System (INIS)

Dunlop, A.; Lesueur, D.

1991-01-01

This paper presents an overview of the effects of high electronic energy deposition in metallic targets irradiated with GeV heavy ions. The main result of these investigations is that high electronic excitations lead to various and sometimes conflicting effects according to the nature of the target: - partial annealing of the defects induced by elastic collisions, - creation of additional disorder, - phase transformation (tracks formation and amorphization), - anisotropic growth. These different effects of high electronic energy deposition in metallic targets are probably manifestations at various degrees of the same basic energy transfer process between the excited electrons and the target atoms. Up to now no theoretical model explains these effects. 24 refs

Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation

Science.gov (United States)

Chen, Z. Q.; Betsuyaku, K.; Kawasuso, A.

2008-03-01

Vacancy defects in ZnO induced by electron irradiation were characterized by the Doppler broadening of annihilation radiation measurements together with the local density approximation calculations. Zinc vacancies (VZn) are responsible for positron trapping in the as-irradiated state. These are annealed out below 200°C . The further annealing at 400°C results in the formation of secondary defects attributed to the complexes composed of zinc vacancies and zinc antisites (VZn-ZnO) .

Zein/caseinate/pectin complex nanoparticles: Formation and characterization.

Science.gov (United States)

Chang, Chao; Wang, Taoran; Hu, Qiaobin; Luo, Yangchao

2017-11-01

In this study, pectin was used as coating material to form zein/caseinate/pectin complex nanoparticles through pH adjustment and heating treatment for potential oral delivery applications. The preparation conditions were studied by applying heating treatment at different pHs, either the isoelectric point of zein (pH 6.2) or caseinate (pH 4.6), or consecutively at both pHs. The particulate characteristics, including particle size, polydispersity index, and zeta potential were monitored for complex nanoparticles formed under different preparation conditions. The complex nanoparticles generally exhibited particle size smaller than 200nm with narrow distribution, spherical shape, and strong negative charge. Fourier transform infrared and fluorescence spectroscopy revealed that hydrophobic interactions and hydrogen bonds were involved in the formation of complex nanoparticles, in addition to electrostatic interactions. Fresh colloidal dispersion and freeze-dried powders varied in their morphology, depending on their preparation conditions. Our results suggested that heating pH and sequence significantly affected the morphology of complex nanoparticles, and pectin coating exerted stabilization effect under simulated gastrointestinal conditions. The present study provides insight into the formation of protein/polysaccharide complex nanoparticles under different preparation conditions. Copyright © 2017 Elsevier B.V. All rights reserved.

Defect Formation beyond Kibble-Zurek Mechanism and Holography

Directory of Open Access Journals (Sweden)

Paul M. Chesler

2015-05-01

Full Text Available We study the dynamic after a smooth quench across a continuous transition from the disordered phase to the ordered phase. Based on scaling ideas, linear response, and the spectrum of unstable modes, we develop a theoretical framework, valid for any second-order phase transition, for the early-time evolution of the condensate in the broken phase. Our analysis unveils a novel period of nonadiabatic evolution after the system passes through the phase transition, where a parametrically large amount of coarsening occurs before a well-defined condensate forms. Our formalism predicts a rate of defect formation parametrically smaller than the Kibble-Zurek prediction and yields a criterion for the breakdown of Kibble-Zurek scaling for sufficiently fast quenches. We numerically test our formalism for a thermal quench in a (2+1-dimensional holographic superfluid. These findings, of direct relevance in a broad range of fields including cold atom, condensed matter, statistical mechanics, and cosmology, are an important step toward a more quantitative understanding of dynamical phase transitions.

Precursor defect to the vacancy-dioxygen center in Si

Science.gov (United States)

Londos, C. A.; Sarlis, N.; Fytros, L. G.; Papastergiou, K.

1996-03-01

In a recent paper [Phys. Rev. B 50, 11 531 (1994)] we have tentatively attributed two new infrared bands at 914 cm -1 and 1000 cm-1, in neutron-irradiated Czochralski-grown silicon, to a [VO+Oi] structure that was considered to develop as an intermediate stage in the process of conversion of a VO center to a VO2 complex upon heat treatment. As a continuation of this work, we further investigate [VO+Oi] structure and the formation of intermediate defects. In addition, we present semiempirical calculations of the localized vibrational mode frequencies of the [VO+Oi] defect. The results are consistent with the experimental observations.

A Finite Element Model to Simulate Defect Formation during Friction Stir Welding

Directory of Open Access Journals (Sweden)

Zhi Zhu

2017-07-01

Full Text Available In this study, a 3D coupled thermo-mechanical finite element model is developed to predict and analyze the defect formation during friction stir welding based on coupled Eulerian Lagrangian method. The model is validated by comparing the estimated welding temperature, processed zone shape and void size with those obtained experimentally. The results compared indicate that the simulated temperature and the data measured are in good agreement with each other. In addition, the model can predict the plasticized zone shape and the presence of a void in the weld quite accurately. However, the void size is overestimated. The effects of welding parameters and tool pin profile are also analyzed. The results reveal that welding at low welding speed or high tool rotational speed could produce a smaller void. Moreover, compared to a smooth tool pin, a featured tool pin can enhance plastic flow in the weld and achieve defect-free weldment. The results are helpful for the optimization of the welding process and the design of welding tools.

First-Principles Investigations of Defects in Minerals

Science.gov (United States)

Verma, Ashok K.

2011-07-01

The ideal crystal has an infinite 3-dimensional repetition of identical units which may be atoms or molecules. But real crystals are limited in size and they have disorder in stacking which as called defects. Basically three types of defects exist in solids: 1) point defects, 2) line defects, and 3) surface defects. Common point defects are vacant lattice sites, interstitial atoms and impurities and these are known to influence strongly many solid-state transport properties such as diffusion, electrical conduction, creep, etc. In thermal equilibrium point defects concentrations are determined by their formation enthalpies and their movement by their migration barriers. Line and surface defects are though absent from the ideal crystal in thermal equilibrium due to higher energy costs but they are invariably present in all real crystals. Line defects include edge-, screw- and mixed-dislocations and their presence is essential in explaining the mechanical strength and deformation of real crystals. Surface defects may arise at the boundary between two grains, or small crystals, within a larger crystal. A wide variety of grain boundaries can form in a polycrystal depending on factors such growth conditions and thermal treatment. In this talk we will present our first-principles density functional theory based defect studies of SiO2 polymorphs (stishovite, CaCl2-, α-PbO2-, and pyrite-type), Mg2SiO4 polymorphs (forsterite, wadsleyite and ringwoodite) and MgO [1-3]. Briefly, several native point defects including vacancies, interstitials, and their complexes were studied in silica polymorphs upto 200 GPa. Their values increase by a factor of 2 over the entire pressure range studied with large differences in some cases between different phases. The Schottky defects are energetically most favorable at zero pressure whereas O-Frenkel pairs become systematically more favorable at pressures higher than 20 GPa. The geometric and electronic structures of defects and migrating

Nanocarbon: Defect Architectures and Properties

Science.gov (United States)

Vuong, Amanda

V6 hexavacancy variant, where six sp3 carbon atoms sit midway between two carbon layers and bond to both, is substantially more stable than any other vacancy aggregate in AA stacked layers. Chapter 5 presents the results of ab initio DFT calculations performed to investigate the wormhole and mezzanine defect that were identified in chapter 4 and the ramp defect discovered by Trevethan et al.. DFT calculations were performed on these defects in twisted bilayer graphene. From the investigation of vacancy complexes in twisted bilayer graphene, it is found that vacancy complexes are unstable in the twisted region and are more favourable in formation energy when the stacking arrangement is close to AA or AB stacking. It has also been discovered that the ramp defect is more stable in the twisted bilayer graphene compared to the mezzanine defect. Chapter 6 presents the results of ab initio DFT calculations performed to investigate a form of extending defect, prismatic edge dislocation. Suarez-Martinez et al.'s research suggest the armchair core is disconnected from any other layer, whilst the zigzag core is connected. In the investigation here, the curvature of the mezzanine defect allows it to swing between the armchair, zigzag and Klein in the AA stacking. For the AB stacking configuration, the armchair and zigzag core are connected from any other layer. Chapter 7 present results of MD simulations using the adaptive intermolecular reactive empirical bond order (AIREBO) potential to investigate the dimensional change of graphite due to the formation of vacancies present in a single crystal. It has been identified that there is an expansion along the c-axis, whilst a contraction along the a- and b- axes due to the coalescence of vacancy forming in-plane and between the layers. The results here are in good agreement with experimental studies of low temperature irradiation. The final chapter gives conclusions to this work.

Stepladder Reconstructive Options in Post-Ablative Complex Surgical Defects in the Head and Neck

International Nuclear Information System (INIS)

EL MARAKBY, H.H.; NAGUIB, Sh.F.; EL-SAWY, A.F.; AMIN, A.A.

2008-01-01

Background: Reconstruction of head and neck defects can pose many challenges to the reconstructive head and neck surgeon. Achieving the best cosmetic and functional results without compromising the safety of oncologic surgery are the primary reconstructive goals. Speech and articulation are particularly important in oral reconstructive procedures. In addition, preservation of the integrity and function of the donor sites should always be considered in all reconstructive procedures. Aim of the Study: The aim of the study is to evaluate different reconstructive options in complex defects of the head and neck region after resection of malignant tumours. The feasibility of the reconstructive ladder starting from simple techniques such as local flaps and skin grafts up to free flaps will be assessed. Patients and Methods: In this study we evaluated different reconstructive procedures used in 50 patients with complex head and neck defects undertaken at the department of surgery at the National Cancer Institute between July 2003 and December 2007. Results: The average age of patients was 52 years and the range was 26-67 years. Most of the tumours were either squamous cell carcinoma (74%) or Basal cell carcinoma (20%). Tumour sites included the nose (6%), lip (10%), cheek (12%) scalp (6%) as well as mucosal defects of the oral cavity (40%) and the hypopharynx (20%). We used local flaps and skin grafts in reconstruction in 36% of cases and pedicled flaps in 32% while free flaps were used in 32% of cases. Complications occurred in 32% of patients of which total flaps loss constituted 6% and partial flap loss 4%. Minor complications such as oro-cutaneous fistulae, wound infection, seroma and haematoma were noticed in 22% and all of them were treated conservatively. The final functional and aesthetic results were satisfactory in 60% of cases while poor results were encountered in patients who suffered some degree of flap loss.

Antisite defects in γ-irradiated InP and InP crystals

International Nuclear Information System (INIS)

Aliev, M.I.; Rashidova, Sh.Sh.; Gusejnova, M.A.; Gadzhieva, N.N.

2008-01-01

By means of TL and IR spectroscopy methods, it has been found that γ-irradiation of lnP single crystals doped with Sn leads to TL peak appearance at 230 K with activation energy E a =0.19 eV. This peak is connected with vacancy-antisite donor-type doped defect complex formation under irradiation [ru

Rabbit Calvarial Defect Model for Customized 3D-Printed Bone Grafts.

Science.gov (United States)

Lee, Kang-Gon; Lee, Kang-Sik; Kang, Yu-Jeoung; Hwang, Jong-Hyun; Lee, Se-Hwan; Park, Sang-Hyug; Park, Yongdoo; Cho, Young-Sam; Lee, Bu-Kyu

2018-05-01

Bone graft materials are commonly used to regenerate various bone defects, but their application is often limited because of the complex defect shape in various clinical conditions. Hence, customized bone grafts using three-dimensional (3D) printing techniques have been developed. However, conventional simple bone defect models are limited for evaluating the benefits and manufacturing accuracy of 3D-printed customized bone grafts. Thus, the aim of the present study was to develop a complex-shaped bone defect model. We designed an 8-shaped bony defect that consists of two simple circles attached to the rabbit calvarium. To determine the critical-sized defect (CSD) of the 8-shaped defects, 5.6- and 7-mm-diameter trephine burs were tested, and the 7-mm-diameter bur could successfully create a CSD, which was easily reproducible on the rabbit calvarium. The rate of new bone formation was 28.65% ± 8.63% at 16 weeks following creation of the defect. To confirm its efficacy for clinical use, the 8-shaped defect was created on a rabbit calvarium and 3D computed tomography (CT) was performed. A stereolithography file was produced using the CT data, and a 3D-printed polycaprolactone graft was fabricated. Using our 8-shaped defect model, we were able to modify the tolerances of the bone graft and calvarial defect to fabricate a more precise bone graft. Customized characteristics of the bone graft were then used to improve the accuracy of the bone graft. In addition, we confirmed the fitting ability of the 3D-printed graft during implantation of the graft. Our 8-shaped defect model on the rabbit calvarium using a 7.0-mm trephine bur may be a useful CSD model for evaluating 3D-printed graft materials.

Defective FANCI binding by a fanconi anemia-related FANCD2 mutant.

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Koichi Sato

Full Text Available FANCD2 is a product of one of the genes associated with Fanconi anemia (FA, a rare recessive disease characterized by bone marrow failure, skeletal malformations, developmental defects, and cancer predisposition. FANCD2 forms a complex with FANCI (ID complex and is monoubiquitinated, which facilitates the downstream interstrand crosslink (ICL repair steps, such as ICL unhooking and nucleolytic end resection. In the present study, we focused on the chicken FANCD2 (cFANCD2 mutant harboring the Leu234 to Arg (L234R substitution. cFANCD2 L234R corresponds to the human FANCD2 L231R mutation identified in an FA patient. We found that cFANCD2 L234R did not complement the defective ICL repair in FANCD2-/- DT40 cells. Purified cFANCD2 L234R did not bind to chicken FANCI, and its monoubiquitination was significantly deficient, probably due to the abnormal ID complex formation. In addition, the histone chaperone activity of cFANCD2 L234R was also defective. These findings may explain some aspects of Fanconi anemia pathogenesis by a FANCD2 missense mutation.

Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1-x)2O3 thin films

Science.gov (United States)

Prozheeva, V.; Hölldobler, R.; von Wenckstern, H.; Grundmann, M.; Tuomisto, F.

2018-03-01

Various nominally undoped and Si-doped (InxGa1-x)2O3 thin films were grown by pulsed laser deposition in a continuous composition spread mode on c-plane α-sapphire and (100)-oriented MgO substrates. Positron annihilation spectroscopy in the Doppler broadening mode was used as the primary characterisation technique in order to investigate the effect of alloy composition and dopant atoms on the formation of vacancy-type defects. In the undoped samples, we observe a Ga2O3-like trend for low indium concentrations changing to In2O3-like behaviour along with the increase in the indium fraction. Increasing indium concentration is found to suppress defect formation in the undoped samples at [In] > 70 at. %. Si doping leads to positron saturation trapping in VIn-like defects, suggesting a vacancy concentration of at least mid-1018 cm-3 independent of the indium content.

Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces.

Science.gov (United States)

Gruber, J; Zhou, X W; Jones, R E; Lee, S R; Tucker, G J

2017-05-21

We investigate the formation of extended defects during molecular-dynamics (MD) simulations of GaN and InGaN growth on (0001) and ([Formula: see text]) wurtzite-GaN surfaces. The simulated growths are conducted on an atypically large scale by sequentially injecting nearly a million individual vapor-phase atoms towards a fixed GaN surface; we apply time-and-position-dependent boundary constraints that vary the ensemble treatments of the vapor-phase, the near-surface solid-phase, and the bulk-like regions of the growing layer. The simulations employ newly optimized Stillinger-Weber In-Ga-N-system potentials, wherein multiple binary and ternary structures are included in the underlying density-functional-theory training sets, allowing improved treatment of In-Ga-related atomic interactions. To examine the effect of growth conditions, we study a matrix of >30 different MD-growth simulations for a range of In x Ga 1-x N-alloy compositions (0 ≤  x  ≤ 0.4) and homologous growth temperatures [0.50 ≤  T/T * m ( x ) ≤ 0.90], where T * m ( x ) is the simulated melting point. Growths conducted on polar (0001) GaN substrates exhibit the formation of various extended defects including stacking faults/polymorphism, associated domain boundaries, surface roughness, dislocations, and voids. In contrast, selected growths conducted on semi-polar ([Formula: see text]) GaN, where the wurtzite-phase stacking sequence is revealed at the surface, exhibit the formation of far fewer stacking faults. We discuss variations in the defect formation with the MD growth conditions, and we compare the resulting simulated films to existing experimental observations in InGaN/GaN. While the palette of defects observed by MD closely resembles those observed in the past experiments, further work is needed to achieve truly predictive large-scale simulations of InGaN/GaN crystal growth using MD methodologies.

Birth–death process of local structures in defect turbulence described by the one-dimensional complex Ginzburg–Landau equation

Energy Technology Data Exchange (ETDEWEB)

Uchiyama, Yusuke, E-mail: r1230160@risk.tsukuba.ac.jp; Konno, Hidetoshi

2014-04-01

Defect turbulence described by the one-dimensional complex Ginzburg–Landau equation is investigated and analyzed via a birth–death process of the local structures composed of defects, holes, and modulated amplitude waves (MAWs). All the number statistics of each local structure, in its stationary state, are subjected to Poisson statistics. In addition, the probability density functions of interarrival times of defects, lifetimes of holes, and MAWs show the existence of long-memory and some characteristic time scales caused by zigzag motions of oscillating traveling holes. The corresponding stochastic process for these observations is fully described by a non-Markovian master equation.

Precursor defect to the vacancy-dioxygen center in Si

International Nuclear Information System (INIS)

Londos, C.A.; Sarlis, N.; Fytros, L.G.; Papastergiou, K.

1996-01-01

In a recent paper [Phys. Rev. B 50, 11531 (1994)] we have tentatively attributed two new infrared bands at 914 cm -1 and 1000 cm -1 , in neutron-irradiated Czochralski-grown silicon, to a [VO+O i ] structure that was considered to develop as an intermediate stage in the process of conversion of a VO center to a VO 2 complex upon heat treatment. As a continuation of this work, we further investigate [VO+O i ] structure and the formation of intermediate defects. In addition, we present semiempirical calculations of the localized vibrational mode frequencies of the [VO+O i ] defect. The results are consistent with the experimental observations. copyright 1996 The American Physical Society

Complex formation between uranium(VI) and α-D-glucose 1-phosphate

International Nuclear Information System (INIS)

Koban, A.; Geipel, G.; Bernhard, G.

2003-01-01

The complex formation of uranium(VI) with α-D-glucose 1-phosphate (C 6 H 11 O 6 PO 3 2- , G1P) was determined by time-resolved laser-induced fluorescence spectroscopy (TRLFS) at pH 4 and potentiometric titration in the pH range from 3 to 10. Both measurements show the formation of a 1 : 1 complex at lower pH values. The formation constant of UO 2 (C 6 H 11 O 6 PO 3 ) was calculated from TRLFS measurements to be log β 11 = 5.72±0.12, and from potentiometric titration log β 11 = 5.40±0.25, respectively. It was found by potentiometric titration that at higher pH values the complexation changes to a 1 : 2 complex. The stability constant for this complex was calculated to be log β 12 = 8.96±0.18. (orig.)

Gadolinium substitution induced defect restructuring in multiferroic BiFeO3: case study by positron annihilation spectroscopy

Science.gov (United States)

Mukherjee, A.; Banerjee, M.; Basu, S.; Nambissan, P. M. G.; Pal, M.

2013-12-01

Positron annihilation spectroscopy (PAS) comprising of the measurements of positron lifetime and coincidence Doppler broadening spectra has been carried out to understand and monitor the evolution of the vacancy-type defects arising from the ionic deficiencies at lattice points of the multiferroic perovskite bismuth ferrite (BiFeO3) doped with 1, 5 and 10 at% gadolinium (Gd3+) ions. Negatively charged defects in the form of Bi3+ monovacancies (V_{Bi}^{3-} ) were present in the undoped nanocrystallites, which strongly trapped positrons. During the successive doping by Gd3+ ions, the positron trapping efficiency decreased while the doped ions combined with the vacancies to form complexes, which became neutral. A fraction of the positrons got annihilated at the crystallite surfaces too, being evident from the very large positron lifetimes obtained and confirming the nano-size-specific characteristics of the samples. Further, the intercrystallite regions provided favourable sites for orthopositronium formation, although in minute concentrations. The dopant ion-complex formation was also depicted clearly by the defect characteristic S-W plot. Also, the large change of electrical resistivity with Gd concentration has been explained nicely by invoking the defect information from the PAS study. The study has demonstrated the usefulness of an excellent method of defect identification in such a novel material system, which is vital information for exploiting them for further technological applications.

Reversibility and Relaxation Behavior of Polyelectrolyte Complex Micelle Formation

NARCIS (Netherlands)

Lindhoud, Saskia; Norde, Willem; Stuart, Martien A. Cohen

2009-01-01

In this study, the formation and disintegration of polyelectrolyte complex micelles is studied by dynamic light scattering titrations with the aim to assess the extent to which these complexes equilibrate. Also, the time evolution of samples at fixed (electroneutral) composition was followed to

Only one ATP-binding DnaX subunit is required for initiation complex formation by the Escherichia coli DNA polymerase III holoenzyme.

Science.gov (United States)

Wieczorek, Anna; Downey, Christopher D; Dallmann, H Garry; McHenry, Charles S

2010-09-17

The DnaX complex (DnaX(3)δδ'χ psi) within the Escherichia coli DNA polymerase III holoenzyme serves to load the dimeric sliding clamp processivity factor, β(2), onto DNA. The complex contains three DnaX subunits, which occur in two forms: τ and the shorter γ, produced by translational frameshifting. Ten forms of E. coli DnaX complex containing all possible combinations of wild-type or a Walker A motif K51E variant τ or γ have been reconstituted and rigorously purified. DnaX complexes containing three DnaX K51E subunits do not bind ATP. Comparison of their ability to support formation of initiation complexes, as measured by processive replication by the DNA polymerase III holoenzyme, indicates a minimal requirement for one ATP-binding DnaX subunit. DnaX complexes containing two mutant DnaX subunits support DNA synthesis at about two-thirds the level of their wild-type counterparts. β(2) binding (determined functionally) is diminished 12-30-fold for DnaX complexes containing two K51E subunits, suggesting that multiple ATPs must be bound to place the DnaX complex into a conformation with maximal affinity for β(2). DNA synthesis activity can be restored by increased concentrations of β(2). In contrast, severe defects in ATP hydrolysis are observed upon introduction of a single K51E DnaX subunit. Thus, ATP binding, hydrolysis, and the ability to form initiation complexes are not tightly coupled. These results suggest that although ATP hydrolysis likely enhances β(2) loading, it is not absolutely required in a mechanistic sense for formation of functional initiation complexes.

Vacancy-type defects in electron and proton irradiated ZnO and ZnS

International Nuclear Information System (INIS)

Brunner, S.; Puff, W.; Logar, B.; Baumann, H.

1997-01-01

A study aimed at investigating basic properties of radiation induced effects in ZnO and ZnS has been presented. Positron annihilation experiments (both lifetime and Doppler-broadening measurements) were performed on polycrystalline samples. For ZnO it was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics and several annealing stages were observed, related to the annealing of variously sized vacancy complexes. The lifetime in defected, proton irradiated polycrystalline ZnS samples, grown by chemical vapour deposition, indicates the formation of large defect complexes. The annealing of proton irradiated ZnS in air at temperatures between 650 C and 750 C leads to significant oxidation and transformation into ZnO. 10 refs, 2 figs, 1 tab

Vacancy-type defects in electron and proton irradiated ZnO and ZnS

Energy Technology Data Exchange (ETDEWEB)

Brunner, S.; Puff, W.; Logar, B. [Technische Univ., Graz (Austria). Inst. fuer Kernphysik; Mascher, P. [McMaster Univ., Hamilton, ON (Canada). Dept. of Biology; Balogh, A.G. [Technische Hochschule Darmstadt (Germany); Baumann, H. [Frankfurt Univ. (Germany). Inst. fuer Kernphysik

1997-10-01

A study aimed at investigating basic properties of radiation induced effects in ZnO and ZnS has been presented. Positron annihilation experiments (both lifetime and Doppler-broadening measurements) were performed on polycrystalline samples. For ZnO it was found that both electron and proton irradiation caused significant changes in the positron annihilation characteristics and several annealing stages were observed, related to the annealing of variously sized vacancy complexes. The lifetime in defected, proton irradiated polycrystalline ZnS samples, grown by chemical vapour deposition, indicates the formation of large defect complexes. The annealing of proton irradiated ZnS in air at temperatures between 650 C and 750 C leads to significant oxidation and transformation into ZnO. 10 refs, 2 figs, 1 tab.

Complex Formation Control of Large-Scale Intelligent Autonomous Vehicles

Directory of Open Access Journals (Sweden)

Ming Lei

2012-01-01

Full Text Available A new formation framework of large-scale intelligent autonomous vehicles is developed, which can realize complex formations while reducing data exchange. Using the proposed hierarchy formation method and the automatic dividing algorithm, vehicles are automatically divided into leaders and followers by exchanging information via wireless network at initial time. Then, leaders form formation geometric shape by global formation information and followers track their own virtual leaders to form line formation by local information. The formation control laws of leaders and followers are designed based on consensus algorithms. Moreover, collision-avoiding problems are considered and solved using artificial potential functions. Finally, a simulation example that consists of 25 vehicles shows the effectiveness of theory.

Defect formation and magnetic properties of Co-doped GaN crystal and nanowire

International Nuclear Information System (INIS)

Shi, Li-Bin; Liu, Jing-Jing; Fei, Ying

2013-01-01

Theoretical calculation based on density functional theory (DFT) and generalized gradient approximation (GGA) has been carried out in studying defect formation and magnetic properties of Co doped GaN crystal and nanowire (NW). Co does not exhibit site preference in GaN crystal. However, Co occupies preferably surface sites in GaN NW. Transition level of the defect is also investigated in GaN crystal. We also find that Co Ga (S) in NW does not produce spin polarization and Co Ga (B) produces spontaneous spin polarization. Ferromagnetic (FM) and antiferromagnetic (AFM) couplings are analyzed by six different configurations. The results show that AFM coupling is more stable than FM coupling for Co doped GaN crystal. It is also found from Co doped GaN NW calculation that the system remains FM stability for majority of the configurations. Magnetic properties in Co doped GaN crystal can be mediated by N and Ga vacancies. The FM and AFM stability can be explained by Co 3d energy level coupling

Mutations in Caenorhabditis elegans him-19 show meiotic defects that worsen with age.

Science.gov (United States)

Tang, Lois; Machacek, Thomas; Mamnun, Yasmine M; Penkner, Alexandra; Gloggnitzer, Jiradet; Wegrostek, Christina; Konrat, Robert; Jantsch, Michael F; Loidl, Josef; Jantsch, Verena

2010-03-15

From a screen for meiotic Caenorhabditis elegans mutants based on high incidence of males, we identified a novel gene, him-19, with multiple functions in prophase of meiosis I. Mutant him-19(jf6) animals show a reduction in pairing of homologous chromosomes and subsequent bivalent formation. Consistently, synaptonemal complex formation is spatially restricted and possibly involves nonhomologous chromosomes. Also, foci of the recombination protein RAD-51 occur delayed or cease altogether. Ultimately, mutation of him-19 leads to chromosome missegregation and reduced offspring viability. The observed defects suggest that HIM-19 is important for both homology recognition and formation of meiotic DNA double-strand breaks. It therefore seems to be engaged in an early meiotic event, resembling in this respect the regulator kinase CHK-2. Most astonishingly, him-19(jf6) hermaphrodites display worsening of phenotypes with increasing age, whereas defects are more severe in female than in male meiosis. This finding is consistent with depletion of a him-19-dependent factor during the production of oocytes. Further characterization of him-19 could contribute to our understanding of age-dependent meiotic defects in humans.

The effect of substitutional elements (Al, Co) in LaNi4.5M0.5 on the lattice defect formation in the initial hydrogenation and dehydrogenation

International Nuclear Information System (INIS)

Sakaki, Kouji; Akiba, Etsuo; Mizuno, Masataka; Araki, Hideki; Shirai, Yasuharu

2009-01-01

The formation of the vacancy and dislocation by the initial hydrogenation and dehydrogenation in LaNi 4.5 M 0.5 (M = Al, Co, and Ni) was observed by means of the positron lifetime technique. The concentrations of vacancy introduced by these processes were 0.25, 0.13 and 0.01 at.% for LaNi 5 , LaNi 4.5 Co 0.5 and LaNi 4.5 Al 0.5 , respectively. Al substitution into LaNi 5 significantly prevented from vacancy formation, compared with LaNi 5 and LaNi 4.5 Co 0.5 . In LaNi 4.5 Al 0.5 , the increase of the hardness and the enhancement of the pulverization, i.e. enhancement of the formation of micro cracks compared with LaNi 5 were observed while the Co substitution had little effect on pulverization and hardness as well as vacancy formation. These results show that the formation of micro cracks became more active process by Al substitution than the formation of the lattice defects to release the strain energy generated by the hydride formation because of the higher formation energy of the lattice defects in LaNi 4.5 Al 0.5 , although both the formation of micro cracks and lattice defects were still observed in all alloys we studied

Asymmetry of limbic structure (hippocampal formation and amygdaloidal complex at PTSD

Directory of Open Access Journals (Sweden)

Aida Sarač-Hadžihalilović

2003-05-01

Full Text Available Defining exact position of weak anatomic function which is find in a base of neurological and psychiatric disorder is just became the subject of intensive research interest. For this purposes it is important to implement structural and functional MRI techniques, also for further lightening and seeing subject of this work, more concretely connected to PTSD. Therefore, exactly MRI gives most sensitive volumetric measuring of hippocampal formation and amygdaloidal complex.The goal of this work was to research asymmetry of hippocampal formation and amygdaloidal complex to the PTSD patients.Results showed that at the axial slice length of hippocampal formation on the left and right side of all patients are significantly asymmetric. At the sagittal slice from the left side of hippocampal formation is in many cases longer than right about 50 %. At the coronal slice, there are no significant differences toward patient proportion according to symm. / asymm. of the hippocampal formation width at the right and left side. Difference in volume average of hippocampal formation between right and left side for axial and coronal slice is not statistically significant, but it is significant for sagittal slice. In about amygdaloidal complex patients with PTSD toward symm. / asymm. Amygdaloidal complex at the right and left side of axial and sagittal slice in all three measurement shows asymmetry, what is especially shown at sagittal slice. Difference in average length of amygdaloidal complex at the right and left side is not statistically significant for no one slice.Therefore, results of a new research that are used MRI, showed smaller hippocampal level at PTSD (researched by Van der Kolka 1996, Pitman 1996, Bremner et al., 1995.. Application of MRI technique in research of asymmetry of hippocampal formation and amygdaloidal complex, which we used in our research, we recommend as a template for future researches in a sense of lightening anatomic function that is

Defect formation energies and homogeneity ranges of rock salt-, pyrite-, chalcopyrite- and molybdenite-type compound semiconductors

Energy Technology Data Exchange (ETDEWEB)

Fiechter, S. [Hahn-Meitner-Institut, Glienicker Strasse 100, Berlin D-14109 (Germany)

2004-07-01

Employing the generalisation of Van Vechten's cavity model, formation energies of neutral point defects in pyrites (FeS{sub 2}, RuS{sub 2}), chalcopyrites (II-IV-V{sub 2} and I-III-VI{sub 2}) as well as molybdenites (MoS{sub 2}, WS{sub 2}) have been estimated. As input parameters the fundamental band gaps, work functions, electron affinities, surface energies, coordination numbers, covalent or ionic radii and unit cell parameters were used. The values calculated for tetrahedrally and octahedrally coordinated compounds agreed well with measured values. The data obtained can be used to calculate point defect concentrations and homogeneity ranges as a function of partial pressure and temperature. Introducing charged vacancies, the conductivity type can be predicted.

Electrical characterization of copper related defect reactions in silicon

Energy Technology Data Exchange (ETDEWEB)

Heiser, T. [Centre National de la Recherche Scientifique, 67 - Strasbourg (France). Lab. PHASE; Istratov, A.A.; Flink, C.; Weber, E.R. [Department of Material Science and Mineral Engineering, University of California at Berkeley, 577 Evans Hall, Berkeley, CA 94720 (United States)

1999-02-12

Defect reactions involving interstitial copper impurities (Cu{sub i}) in silicon are reviewed. The influence of the Coulomb interaction between positively charged copper and negatively charged defects, such as acceptor states of transition metals and lattice defects, on the complex formation rate is discussed in detail. The diffusivity of interstitial copper and the dissociation kinetics of copper-acceptor pairs are studied using the recently introduced transient ion drift (TID) method. TID results reveal that most interstitial copper impurities remain dissolved immediately after the quench and form pairs with shallow acceptors. It is shown that in moderately and heavily doped silicon the diffusivity of copper is trap limited, while in low B-doped silicon the interstitial copper-acceptor pairing is weak enough to allow the assessment of the copper intrinsic diffusion coefficient. The intrinsic diffusion barrier is estimated to be 0.18{+-}0.01 eV. It is concluded that the Coulomb potential used in previous publications underestimated considerably the acceptor-copper interaction. In light of these results, a general discussion on Cu related defect reactions is given. (orig.) 44 refs.

Preoperative Botulinum toxin A enabling defect closure and laparoscopic repair of complex ventral hernia.

Science.gov (United States)

Rodriguez-Acevedo, Omar; Elstner, Kristen E; Jacombs, Anita S W; Read, John W; Martins, Rodrigo Tomazini; Arduini, Fernando; Wehrhahm, Michael; Craft, Colette; Cosman, Peter H; Dardano, Anthony N; Ibrahim, Nabeel

2018-02-01

Operative management of complex ventral hernia still remains a significant challenge for surgeons. Closure of large defects in the unprepared abdomen has serious pathophysiological consequences due to chronic contraction and retraction of the lateral abdominal wall muscles. We report outcomes of 56 consecutive patients who had preoperative Botulinum toxin A (BTA) abdominal wall relaxation facilitating closure and repair. This was a prospective observational study of 56 patients who underwent ultrasound-guided BTA into the lateral abdominal oblique muscles prior to elective ventral hernia repair between November 2012 and January 2017. Serial non-contrast abdominal CT imaging was performed to evaluate changes in lateral oblique muscle length and thickness. All hernias were repaired laparoscopically, or laparoscopic-open-laparoscopic (LOL) using intraperitoneal onlay mesh. 56 patients received BTA injections at predetermined sites to the lateral oblique muscles, which were well tolerated. Mean patient age was 59.7 years, and mean BMI was 30.9 kg/m 2 (range 21.8-54.0). Maximum defect size was 24 × 27 cm. A subset of 18 patients underwent preoperative pneumoperitoneum as an adjunct procedure. A comparison of pre-BTA to post-BTA imaging demonstrated an increase in mean lateral abdominal wall length from 16.1 cm to 20.1 cm per side, a mean gain of 4.0 cm/side (range 1.0-11.7 cm/side) (p LOL primary closure was achieved in all cases, with no clinical evidence of raised intra-abdominal pressures. One patient presented with a new fascial defect 26 months post-operative. Preoperative BTA to the lateral abdominal wall muscles is a safe and effective technique for the preparation of patients prior to operative management of complex ventral hernias. BTA temporary flaccid paralysis relaxes, elongates and thins the chronically contracted abdominal musculature. This in turn reduces lateral traction forces facilitating laparoscopic repair and fascial closure of large

Laparoscopic omentoplasty to support anastomotic urethroplasty in complex and redo pelvic fracture urethral defects.

Science.gov (United States)

Kulkarni, Sanjay B; Barbagli, Guido; Joshi, Pankaj M; Hunter, Craig; Shahrour, Walid; Kulkarni, Jyotsna; Sansalone, Salvatore; Lazzeri, Massimo

2015-05-01

To test the hypothesis that a new surgical technique using elaborated perineal anastomotic urethroplasty combined with laparoscopic omentoplasty for patients with complex and prior failed pelvic fracture urethral defect repair was feasible, safe, and effective. We performed a prospective, observational, stage 2a study to observe treatment outcomes of combined perineal and laparoscopic approach for urethroplasty in patients with pelvic fracture urethral defect at a single center in Pune, India, between January 2012 and February 2013. Complex and redo patients with pelvic fracture urethral defect occurring after pelvic fracture urethral injury were included in the study. Anterior urethral strictures were excluded. The primary study outcome was the success rate of the surgical technique, and the secondary outcome was to evaluate feasibility and safety of the procedure. The clinical outcome was considered a failure when any postoperative instrumentation was needed. Fifteen male patients with a median age of 19 years were included in the study. Seven patients were adolescents (12-18 years) and 8 patients (53.3%) were adults (19-49 years). The mean number of prior urethroplasties was 1.8 (range, 1-3). All patients underwent elaborated bulbomembranous anastomosis using a perineal approach with inferior pubectomy combined with laparoscopic mobilization of the omentum into the perineum to envelope the anastomosis and to fill the perineal dead space. Of 15 patients, 14 (93.3%) were successful and 1 (6.6%) failed. One adolescent boy 14 years old developed a recurrent stricture 2 months after the procedure and was managed using internal urethrotomy. Median follow-up was 18 months (range, 13-24 months). Combining a laparoscopic omentoplasty to a membranobulbar anastomosis for complex and redo pelvic fracture urethral injury is successful, feasible, safe, and with minimal additional morbidity to the patient. The technique has the advantage of a perineal incision and the ability

Effect of irradiation temperature and initial crystal doping level on defect creation efficiency in silicon

International Nuclear Information System (INIS)

Korshunov, F.P.; Markevich, V.P.; Medvedeva, I.F.; Murin, L.I.

1990-01-01

The defect creation processes in n-type silicon irradiated by 60 Co gamma-rays or fast electrons (E = 4 MeV) have been investigated. Using electrical measurements the dependences of introduction efficiencies of the main radiation defects (A-, E-centres, carbon-related complexes) on the irradiation temperature (T irr = 77-470 K) and material doping level (N h = 2 x 10 12 - 2 x 10 15 cm -3 ) are obtained. It is shown that the efficiency of these defects formation is conditioned by the probability of the Frenkel pairs separation and depends strongly on the Fermi level position in crystals being irradiated. 9 refs.; 3 figs.; 1 tab

A study of defect cluster formation in vanadium by heavy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Sekimura, Naoto; Shirao, Yasuyuki; Morishita, Kazunori [Tokyo Univ. (Japan)

1996-10-01

Formation of defect clusters in thin foils of vanadium was investigated by heavy ion irradiation. In the very thin region of the specimens less than 20 nm, vacancy clusters were formed under gold ion irradiation, while very few clusters were detected in the specimens irradiated with 200 and 400 keV self-ions up to 1 x 10{sup 16} ions/m{sup 2}. The density of vacancy clusters were found to be strongly dependent on ion energy. Only above the critical value of kinetic energy transfer density in vanadium, vacancy clusters are considered to be formed in the cascade damage from which interstitials can escape to the specimen surface in the very thin region. (author)

Defect-impurity interactions in ion-implanted metals

International Nuclear Information System (INIS)

Turos, A.

1986-01-01

An overview of defect-impurity interactions in metals is presented. When point defects become mobile they migrate towards the sinks and on the way can be captured by impurity atoms forming stable associations so-called complexes. In some metallic systems complexes can also be formed athermally during ion implantation by trapping point defects already in the collision cascade. An association of a point defect with an impurity atom leads to its displacement from the lattice site. The structure and stability of complexes are strongly temperature dependent. With increasing temperature they dissociate or grow by multiple defect trapping. The appearance of freely migrating point defects at elevated temperatures, due to ion bombardment or thermal annealing, causes via coupling with defect fluxes, important impurity redistribution. Because of the sensitivity of many metal-in-metal implanted systems to radiation damage the understanding of this processes is essential for a proper interpretation of the lattice occupancy measurements and the optimization of implantation conditions. (author)

SPECTROPHOTOMETRIC STUDIES OF SANGUINARINE-Β-CYCLODEXTRIN COMPLEX FORMATION

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Veaceslav Boldescu

2008-06-01

Full Text Available The main aim of this study was to investigate the influence of pH and the presence of hydrophilic polymer polyvinylpyrrolidone on the formation of sanguinarine-β-cyclodextrin (SANG-β-CD inclusion complex. Spectrophotometric studies of the SANG-β-CD systems in the presence and without 0.1 % PVP at the pH 5.0 did not show any evidence of the complex formation. However, the same systems showed several obvious evidences at the pH 8.0: the hyperchromic and the hypochromic effects and the presence of the isosbestic point in the region of 200 – 210 nm. The association constants calculated by three linear methods: Benesi-Hildebrand, Scott and Scatchard, were two times higher for the systems with addition of 0.1% PVP than for the systems without it.

Effect of dose and size on defect engineering in carbon cluster implanted silicon wafers

Science.gov (United States)

Okuyama, Ryosuke; Masada, Ayumi; Shigematsu, Satoshi; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshihiro; Okuda, Hidehiko; Kurita, Kazunari

2018-01-01

Carbon-cluster-ion-implanted defects were investigated by high-resolution cross-sectional transmission electron microscopy toward achieving high-performance CMOS image sensors. We revealed that implantation damage formation in the silicon wafer bulk significantly differs between carbon-cluster and monomer ions after implantation. After epitaxial growth, small and large defects were observed in the implanted region of carbon clusters. The electron diffraction pattern of both small and large defects exhibits that from bulk crystalline silicon in the implanted region. On the one hand, we assumed that the silicon carbide structure was not formed in the implanted region, and small defects formed because of the complex of carbon and interstitial silicon. On the other hand, large defects were hypothesized to originate from the recrystallization of the amorphous layer formed by high-dose carbon-cluster implantation. These defects are considered to contribute to the powerful gettering capability required for high-performance CMOS image sensors.

Single-stranded nucleic acids promote SAMHD1 complex formation.

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Tüngler, Victoria; Staroske, Wolfgang; Kind, Barbara; Dobrick, Manuela; Kretschmer, Stefanie; Schmidt, Franziska; Krug, Claudia; Lorenz, Mike; Chara, Osvaldo; Schwille, Petra; Lee-Kirsch, Min Ae

2013-06-01

SAM domain and HD domain-containing protein 1 (SAMHD1) is a dGTP-dependent triphosphohydrolase that degrades deoxyribonucleoside triphosphates (dNTPs) thereby limiting the intracellular dNTP pool. Mutations in SAMHD1 cause Aicardi-Goutières syndrome (AGS), an inflammatory encephalopathy that mimics congenital viral infection and that phenotypically overlaps with the autoimmune disease systemic lupus erythematosus. Both disorders are characterized by activation of the antiviral cytokine interferon-α initiated by immune recognition of self nucleic acids. Here we provide first direct evidence that SAMHD1 associates with endogenous nucleic acids in situ. Using fluorescence cross-correlation spectroscopy, we demonstrate that SAMHD1 specifically interacts with ssRNA and ssDNA and establish that nucleic acid-binding and formation of SAMHD1 complexes are mutually dependent. Interaction with nucleic acids and complex formation do not require the SAM domain, but are dependent on the HD domain and the C-terminal region of SAMHD1. We finally demonstrate that mutations associated with AGS exhibit both impaired nucleic acid-binding and complex formation implicating that interaction with nucleic acids is an integral aspect of SAMHD1 function.

Synthetic Defects for Vibrothermography

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Renshaw, Jeremy; Holland, Stephen D.; Thompson, R. Bruce; Eisenmann, David J.

2010-02-01

Synthetic defects are an important tool used for characterizing the performance of nondestructive evaluation techniques. Viscous material-filled synthetic defects were developed for use in vibrothermography (also known as sonic IR) as a tool to improve inspection accuracy and reliability. This paper describes how the heat-generation response of these VMF synthetic defects is similar to the response of real defects. It also shows how VMF defects can be applied to improve inspection accuracy for complex industrial parts and presents a study of their application in an aircraft engine stator vane.

Cellular structure formed by ion-implantation-induced point defect

International Nuclear Information System (INIS)

Nitta, N.; Taniwaki, M.; Hayashi, Y.; Yoshiie, T.

2006-01-01

The authors have found that a cellular defect structure is formed on the surface of Sn + ion implanted GaSb at a low temperature and proposed its formation mechanism based on the movement of the induced point defects. This research was carried out in order to examine the validity of the mechanism by clarifying the effect of the mobility of the point defects on the defect formation. The defect structure on the GaSb surfaces implanted at cryogenic temperature and room temperature was investigated by scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM) observation. In the sample implanted at room temperature, the sponge-like structure (a pileup of voids) was formed and the cellular structure, as observed at a low temperature, did not develop. This behavior was explained by the high mobility of the vacancies during implantation at room temperature, and the proposed idea that the defect formation process is dominated by the induced point defects was confirmed

Positronium formation studies in crystalline molecular complexes: Triphenylphosphine oxide - Acetanilide

Science.gov (United States)

Oliveira, F. C.; Denadai, A. M. L.; Guerra, L. D. L.; Fulgêncio, F. H.; Windmöller, D.; Santos, G. C.; Fernandes, N. G.; Yoshida, M. I.; Donnici, C. L.; Magalhães, W. F.; Machado, J. C.

2013-04-01

Hydrogen bond formation in the triphenylphosphine oxide (TPPO), acetanilide (ACN) supramolecular heterosynton system, named [TPPO0.5·ACN0.5], has been studied by Positron Annihilation Lifetime Spectroscopy (PALS) and supported by several analytical techniques. In toluene solution, Isothermal Titration Calorimetry (ITC) presented a 1:1 stoichiometry and indicated that the complexation process is driven by entropy, with low enthalpy contribution. X-ray structure determination showed the existence of a three-dimensional network of hydrogen bonds, allowing also the confirmation of the existence of a 1:1 crystalline molecular complex in solid state. The results of thermal analysis (TGA, DTA and DSC) and FTIR spectroscopy showed that the interactions in the complex are relatively weaker than those found in pure precursors, leading to a higher positronium formation probability at [TPPO0.5·ACN0.5]. These weak interactions in the complex enhance the possibility of the n- and π-electrons to interact with positrons and consequently, the probability of positronium formation is higher. Through the present work is shown that PALS is a sensible powerful tool to investigate intermolecular interactions in solid heterosynton supramolecular systems.

Defect of the Eyelids.

Science.gov (United States)

Lu, Guanning Nina; Pelton, Ron W; Humphrey, Clinton D; Kriet, John David

2017-08-01

Eyelid defects disrupt the complex natural form and function of the eyelids and present a surgical challenge. Detailed knowledge of eyelid anatomy is essential in evaluating a defect and composing a reconstructive plan. Numerous reconstructive techniques have been described, including primary closure, grafting, and a variety of local flaps. This article describes an updated reconstructive ladder for eyelid defects that can be used in various permutations to solve most eyelid defects. Copyright © 2017 Elsevier Inc. All rights reserved.

Theoretical study of the possibility of glycin with thiotriazoline complexes formation

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L. I. Kucherenko

2017-10-01

Full Text Available Brain strokes are widely spread all over the world and are among the most dangerous for the population. Often it leads to death, complete or partial loss of ability to work. The correction of imbalance of Excitatory and inhibitory neurotransmitter systems by activation of natural inhibitory processes is a promising direction of primary neuroprotection in cerebral ischemia. Particular attention is drawn to the natural inhibitory neurotransmitter – glycine and its role in the mechanisms of acute cerebral ischemia. There are data on the ability of the thiotriazoline antioxidant to potentiate the therapeutic effect of neurometabolic cerebroprotectors. Therefore, the creation of new combined preparation based on glycine with thiotriazoline is important today. Objective: to study the structure, and estimate the energy of formation and geometric characteristics of the intermolecular hydrogen bonds for complexes which are formed with glycine, 3-methyl-1,2,4-triazolyl-5-thioacetate (MTTA and morpholine. Method of calculation. The initial approximation to the structure of the complexes was obtained with the help of molecular docking procedure using the AutoDock Vina program. The resulting three-component complexes were preliminarily optimized by the semiempirical PM7 method, taking into account the outward influences, which was simulated by the COSMO method. The calculations were carried out using the MOPAC2012 program. The complexes were optimized using the density functional method with the empirical dispersion correction B97-D3/SVP+COSMO (Water using geometric correction for the incompleteness of the gCP basic set. A more accurate calculation of the solvation energy was carried out by SMD method. Calculations by the density functional method were carried out using the ORCA 3.0.3 program. The energy of formation of complexes in solution was calculated as the difference between the free Gibbs energies of the solvated complex and its individual solvated

Proteomic analysis of HIV-1 Nef cellular binding partners reveals a role for exocyst complex proteins in mediating enhancement of intercellular nanotube formation

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Mukerji Joya

2012-06-01

Full Text Available Abstract Background HIV-1 Nef protein contributes to pathogenesis via multiple functions that include enhancement of viral replication and infectivity, alteration of intracellular trafficking, and modulation of cellular signaling pathways. Nef stimulates formation of tunneling nanotubes and virological synapses, and is transferred to bystander cells via these intercellular contacts and secreted microvesicles. Nef associates with and activates Pak2, a kinase that regulates T-cell signaling and actin cytoskeleton dynamics, but how Nef promotes nanotube formation is unknown. Results To identify Nef binding partners involved in Pak2-association dependent Nef functions, we employed tandem mass spectrometry analysis of Nef immunocomplexes from Jurkat cells expressing wild-type Nef or Nef mutants defective for the ability to associate with Pak2 (F85L, F89H, H191F and A72P, A75P in NL4-3. We report that wild-type, but not mutant Nef, was associated with 5 components of the exocyst complex (EXOC1, EXOC2, EXOC3, EXOC4, and EXOC6, an octameric complex that tethers vesicles at the plasma membrane, regulates polarized exocytosis, and recruits membranes and proteins required for nanotube formation. Additionally, Pak2 kinase was associated exclusively with wild-type Nef. Association of EXOC1, EXOC2, EXOC3, and EXOC4 with wild-type, but not mutant Nef, was verified by co-immunoprecipitation assays in Jurkat cells. Furthermore, shRNA-mediated depletion of EXOC2 in Jurkat cells abrogated Nef-mediated enhancement of nanotube formation. Using bioinformatic tools, we visualized protein interaction networks that reveal functional linkages between Nef, the exocyst complex, and the cellular endocytic and exocytic trafficking machinery. Conclusions Exocyst complex proteins are likely a key effector of Nef-mediated enhancement of nanotube formation, and possibly microvesicle secretion. Linkages revealed between Nef and the exocyst complex suggest a new paradigm of

Multi-physics modeling of single/multiple-track defect mechanisms in electron beam selective melting

International Nuclear Information System (INIS)

Yan, Wentao; Ge, Wenjun; Qian, Ya; Lin, Stephen; Zhou, Bin; Liu, Wing Kam; Lin, Feng; Wagner, Gregory J.

2017-01-01

Metallic powder bed-based additive manufacturing technologies have many promising attributes. The single track acts as one fundamental building unit, which largely influences the final product quality such as the surface roughness and dimensional accuracy. A high-fidelity powder-scale model is developed to predict the detailed formation processes of single/multiple-track defects, including the balling effect, single track nonuniformity and inter-track voids. These processes are difficult to observe in experiments; previous studies have proposed different or even conflicting explanations. Our study clarifies the underlying formation mechanisms, reveals the influence of key factors, and guides the improvement of fabrication quality of single tracks. Additionally, the manufacturing processes of multiple tracks along S/Z-shaped scan paths with various hatching distance are simulated to further understand the defects in complex structures. The simulations demonstrate that the hatching distance should be no larger than the width of the remelted region within the substrate rather than the width of the melted region within the powder layer. Thus, single track simulations can provide valuable insight for complex structures.

Influence of pretreatment temperature cycling on the radiating defect formation in silicon doped by samarium

International Nuclear Information System (INIS)

Abdurakhmanov, K.P.; Nazyrov, D.E.

2006-01-01

Full text: The raise of thermal and radiation stability as it is known, is one of actual problems of physics semiconductors. Recently it is established, that the rare-earth elements (REE) raise a stability of silicon to exterior action. In this connection the investigation of silicon doped REE by samarium and influence on its properties of heat treatments and radiation exposure is important. In sectional operation the outcomes of investigations of influence of samarium on thermal (600 degree C are reduced; 600 deg. + 900 deg. C; 900 deg. C; 900 deg. C + 600 deg. C; 1100 deg. C; 600 deg. C + 900 deg. C + 1100 deg. C; 900 deg. C + 600 deg. C + 1100 deg. C) thermal defect formation and radiation defect formation (exposure of γ-quanta 60 Co) both in beforehand wrought, and in thermally unfinished samples. After each cycle of heat treatments samples cool fast (throwing off in oil) or slowly (together with the furnace). Doping n-silicon REE by gadolinium and samarium was carried out during cultivation. The concentration of gadolinium and samarium in silicon, on sectional of a neutron-activation analysis was equaled 10 14 - 10 18 cm -3 . As control is model monocrystal silicon such as KEP-15/50. Para-meters of deep levels originating in control and doped REE samples, both past heat treatment or temperature cycling, and irradiated by the γ-quanta are defined by methods of a capacity spectroscopy: DLTS and IRC. The obtained outcomes have shown, that in irradiated with the γ-quanta 60 Co deep levels samples are formed with energies: E C -0,17 eV, E C -0,32 eV, EC-0,41 eV. Thus the parameters of deep levels vary depending on requirements of prestress heat treatment. For example heat treatment at 600 deg. C essentially increments a velocity of introduction of and centre (deep level of E C -0,17 eV), in comparison with a velocity of introduction of this level in samples with prestress heat treatment at 900 deg. C. In samples n-Si doped by samarium effectiveness of formation

Crystal structures of complexes of NAD+-dependent formate dehydrogenase from methylotrophic bacterium Pseudomonas sp. 101 with formate

International Nuclear Information System (INIS)

Filippova, E. V.; Polyakov, K. M.; Tikhonova, T. V.; Stekhanova, T. N.; Boiko, K. M.; Sadykhov, I. G.; Tishkov, V. I.; Popov, V. O.; Labru, N.

2006-01-01

Formate dehydrogenase (FDH) from the methylotrophic bacterium Pseudomonas sp. 101 catalyzes oxidation of formate to NI 2 with the coupled reduction of nicotinamide adenine dinucleotide (NAD + ). The three-dimensional structures of the apo form (the free enzyme) and the holo form (the ternary FDH-NAD + -azide complex) of FDH have been established earlier. In the present study, the structures of FDH complexes with formate are solved at 2.19 and 2.28 A resolution by the molecular replacement method and refined to the R factors of 22.3 and 20.5%, respectively. Both crystal structures contain four protein molecules per asymmetric unit. These molecules form two dimers identical to the dimer of the apo form of FDH. Two possible formatebinding sites are found in the active site of the FDH structure. In the complexes the sulfur atom of residue Cys354 exists in the oxidized state

Gel phase formation in dilute triblock copolyelectrolyte complexes

Science.gov (United States)

Srivastava, Samanvaya; Andreev, Marat; Levi, Adam E.; Goldfeld, David J.; Mao, Jun; Heller, William T.; Prabhu, Vivek M.; de Pablo, Juan J.; Tirrell, Matthew V.

2017-02-01

Assembly of oppositely charged triblock copolyelectrolytes into phase-separated gels at low polymer concentrations (simulations. Here we show that in contrast to uncharged, amphiphilic block copolymers that form discrete micelles at low concentrations and enter a phase of strongly interacting micelles in a gradual manner with increasing concentration, the formation of a dilute phase of individual micelles is prevented in polyelectrolyte complexation-driven assembly of triblock copolyelectrolytes. Gel phases form and phase separate almost instantaneously on solvation of the copolymers. Furthermore, molecular models of self-assembly demonstrate the presence of oligo-chain aggregates in early stages of copolyelectrolyte assembly, at experimentally unobservable polymer concentrations. Our discoveries contribute to the fundamental understanding of the structure and pathways of complexation-driven assemblies, and raise intriguing prospects for gel formation at extraordinarily low concentrations, with applications in tissue engineering, agriculture, water purification and theranostics.

Coenzyme Q10 defects may be associated with a deficiency of Q10-independent mitochondrial respiratory chain complexes

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Konstantina Fragaki

Full Text Available BACKGROUND: Coenzyme Q10 (CoQ10 or ubiquinone deficiency can be due either to mutations in genes involved in CoQ10 biosynthesis pathway, or to mutations in genes unrelated to CoQ10 biosynthesis. CoQ10 defect is the only oxidative phosphorylation disorder that can be clinically improved after oral CoQ10 supplementation. Thus, early diagnosis, first evoked by mitochondrial respiratory chain (MRC spectrophotometric analysis, then confirmed by direct measurement of CoQ10 levels, is of critical importance to prevent irreversible damage in organs such as the kidney and the central nervous system. It is widely reported that CoQ10 deficient patients present decreased quinone-dependent activities (segments I + III or G3P + III and II + III while MRC activities of complexes I, II, III, IV and V are normal. We previously suggested that CoQ10 defect may be associated with a deficiency of CoQ10-independent MRC complexes. The aim of this study was to verify this hypothesis in order to improve the diagnosis of this disease. RESULTS: To determine whether CoQ10 defect could be associated with MRC deficiency, we quantified CoQ10 by LC-MSMS in a cohort of 18 patients presenting CoQ10-dependent deficiency associated with MRC defect. We found decreased levels of CoQ10 in eight patients out of 18 (45 %, thus confirming CoQ10 disease. CONCLUSIONS: Our study shows that CoQ10 defect can be associated with MRC deficiency. This could be of major importance in clinical practice for the diagnosis of a disease that can be improved by CoQ10 supplementation.

Complex formation constant and hydration number change of aqua-rare earth ions

International Nuclear Information System (INIS)

Kanno, H.

1998-01-01

Full text: It is now well established that the inner-sphere hydration number of aqua-rare earth ions changes from nine to eight in the middle of the rare earth series. This hydration number change greatly affects the complex formation of rare earth ions as we observe irregular variations in most series behaviours of the complex formation constant (K) in aqueous solution systems when K being plotted against 1/r or r (r is ionic radius of rare earth ion). Furthermore, it shows very anomalous concentration dependence in the sense that nona-aqua Ln 3+ ion increases in number with increase in salt concentration in aqueous rare earth salt solution (salt chloride, perchlorate). In this report, a theoretical derivation of the formation constant (K) for the inner-sphere complex formation of rare earth ions with a monodentate ligand was made by taking account of both the hydration number change in the middle of the series and its anomalous salt concentration dependence. The series behaviour of the formation constant against 1/r (or r) is successfully explained with using the empirical finding that K varies almost linearly with 1/r (or r) in the region where only one hydration number dominates. This success is also taken as evidence that the anomalous salt concentration dependence of the hydration number change is caused by the outer-sphere complex formation of rare earth ions with the condition that nona-aqua rare earth ions form outer-sphere complexes more easily than octa-aqua ions

High Defect Tolerance in Lead Halide Perovskite CsPbBr3.

Science.gov (United States)

Kang, Jun; Wang, Lin-Wang

2017-01-19

The formation energies and charge-transition levels of intrinsic point defects in lead halide perovskite CsPbBr 3 are studied from first-principles calculations. It is shown that the formation energy of dominant defect under Br-rich growth condition is much lower than that under moderate or Br-poor conditions. Thus avoiding the Br-rich condition can help to reduce the defect concentration. Interestingly, CsPbBr 3 is found to be highly defect-tolerant in terms of its electronic structure. Most of the intrinsic defects induce shallow transition levels. Only a few defects with high formation energies can create deep transition levels. Therefore, CsPbBr 3 can maintain its good electronic quality despite the presence of defects. Such defect tolerance feature can be attributed to the lacking of bonding-antibonding interaction between the conduction bands and valence bands.

Interfacial micropore defect formation in PEDOT:PSS-Si hybrid solar cells probed by TOF-SIMS 3D chemical imaging.

Science.gov (United States)

Thomas, Joseph P; Zhao, Liyan; Abd-Ellah, Marwa; Heinig, Nina F; Leung, K T

2013-07-16

Conducting p-type polymer layers on n-type Si have been widely studied for the fabrication of cost-effective hybrid solar cells. In this work, time-of-flight secondary ion mass spectrometry (TOF-SIMS) is used to provide three-dimensional chemical imaging of the interface between poly(3,4-ethylene-dioxythiophene):polystyrenesulfonate (PEDOT:PSS) and SiOx/Si in a hybrid solar cell. To minimize structural damage to the polymer layer, an Ar cluster sputtering source is used for depth profiling. The present result shows the formation of micropore defects in the interface region of the PEDOT:PSS layer on the SiOx/Si substrate. This interfacial micropore defect formation becomes more prominent with increasing thickness of the native oxide layer, which is a key device parameter that greatly affects the hybrid solar cell performance. Three-dimensional chemical imaging coupled with Ar cluster ion sputtering has therefore been demonstrated as an emerging technique for probing the interface of this and other polymer-inorganic systems.

3D printed alendronate-releasing poly(caprolactone) porous scaffolds enhance osteogenic differentiation and bone formation in rat tibial defects.

Science.gov (United States)

Kim, Sung Eun; Yun, Young-Pil; Shim, Kyu-Sik; Kim, Hak-Jun; Park, Kyeongsoon; Song, Hae-Ryong

2016-09-29

The aim of this study was to evaluate the in vitro osteogenic effects and in vivo new bone formation of three-dimensional (3D) printed alendronate (Aln)-releasing poly(caprolactone) (PCL) (Aln/PCL) scaffolds in rat tibial defect models. 3D printed Aln/PCL scaffolds were fabricated via layer-by-layer deposition. The fabricated Aln/PCL scaffolds had high porosity and an interconnected pore structure and showed sustained Aln release. In vitro studies showed that MG-63 cells seeded on the Aln/PCL scaffolds displayed increased alkaline phosphatase (ALP) activity and calcium content in a dose-dependent manner when compared with cell cultures in PCL scaffolds. In addition, in vivo animal studies and histologic evaluation showed that Aln/PCL scaffolds implanted in a rat tibial defect model markedly increased new bone formation and mineralized bone tissues in a dose-dependent manner compared to PCL-only scaffolds. Our results show that 3D printed Aln/PCL scaffolds are promising templates for bone tissue engineering applications.

Electronic and atomic structure of complex defects in Al- and Ga-highly doped ZnO films

Energy Technology Data Exchange (ETDEWEB)

Menéndez-Proupin, Eduardo [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Departamento de Física, Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, 780-0003 Ñuñoa, Santiago (Chile); Palacios, Pablo, E-mail: pablo.palacios@upm.es [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Dpt. FAIAN, E.T.S.I. Aeronáutica y del Espacio, UPM, Pz. Cardenal Cisneros 3, 28040 Madrid (Spain); Wahnón, Perla [Instituto de Energía Solar, Universidad Politécnica de Madrid (UPM), Ciudad Universitaria, 28040 Madrid (Spain); Dpt. TFO, E.T.S.I. Telecomunicación, UPM, Ciudad Universitaria, 28040 Madrid (Spain)

2015-06-15

Point defects in Ga- and Al-doped ZnO thin films are studied by means of first principles electronic structure calculations. Candidate defects are identified to explain recently observed differences in electrical and spectroscopic behavior of both systems. Substitutional doping in Ga–ZnO explain the metallic behavior of the electrical properties. Complexes of interstitial oxygen with substitutional Ga can behave as acceptor and cause partial compensation, as well as gap states below the conduction band minimum as observed in photoemission experiments. Zn vacancies can also act as compensating acceptors. On the other hand, the semiconducting behavior of Al–ZnO and the small variation in the optical gap compared with pure ZnO, can be explained by almost complete compensation between acceptor Zn vacancies and substitutional Al donors. Interstitial Al can also be donor levels and can be the origin of the small band observed in photoemission experiments below the Fermi level. Combinations of substitutional Al with interstitial oxygen can act simultaneously as compensating acceptor and generator of the mentioned photoemission band. The theoretical calculations have been done using density functional theory (DFT) within the generalized gradient approximation with on-site Coulomb interaction. In selected cases, DFT calculations with semilocal-exact exchange hybrid functionals have been performed. Results explain photoelectron spectra of Ga–ZnO and Al–ZnO at the corresponding doping levels. - Highlights: • Defects in Ga- and Al-heavy-doped ZnO films are studied by quantum calculations. • Defects compatible with electrical, optical, and HAXPES spectra are proposed. • Doping efficiency is reduced by Zn vacancies and O interstitials. • HAXPES bands near the Fermi level are induced by Al{sub i}, and complexes Ga{sub Zn}-O{sub i}, and Al{sub Zn}-O{sub i}.

Influence of Cast Iron Structure on the Glassmold Equipment Operational Defects

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I. O. Leushin

2015-01-01

Full Text Available The growing demand for glass packaging contributes to the increase in production capacity of glass-container plants. Their equipment (cast iron glass-forming sets operates in continuous mode under complex cyclic thermal loads, which lead to the formation of operational defects on the working surfaces of details: graphite falling, cracks, oxidation, etc. Particular influence on the formation of these defects renders the microstructure of the material at the time of installation of details on the line.The article identifies the causes for formation of operational defects, formulates the ways to remedy them and prevent their occurrence.The authors studied details made from grey cast iron with flake and spherical forms of graphite. It is found that in the process of exploitation of the material is greatly reducing its hardness, strength, resistance to oxidation through of graphitization processes, chemical interaction of glass and iron, shock loads working edges. It is proved that the choice of initial microstructure of cast iron (the metal base, the graphite form, the presence of structural-free cementite exercises a determining influence on the durability of the mold tooling. The article proposes differential (layered arrangement of the graphite phase of cast iron in the alloy matrix (ferrite. This arrangement of high-carbon phase can simultaneously increase the thermal and oxidation resistance of the material. The formation of a layered structure of iron is produced by the intensification of the processes of alloying, modifying and directional freezing the melt.These data can be used to select the material of details by manufacturers glass-molds tooling.

The fractal character of radiation defects aggregation in crystals

International Nuclear Information System (INIS)

Akylbekov, A.; Akimbekov, E.; Baktybekov, K.; Vasil'eva, I.

2002-01-01

In processes of self-organization, which characterize open systems, the source of ordering is a non-equilibrium. One of the samples of ordering system is radiation-stimulated aggregation of defects in solids. In real work the analysis of criterions of ordering defects structures in solid, which is continuously irradiate at low temperature is presented. The method of cellular automata used in simulation of irradiation. It allowed us to imitate processes of defects formation and recombination. The simulation realized on the surfaces up to 1000x1000 units with initial concentration of defects C n (the power of dose) 0.1-1 %. The number of iterations N (duration of irradiation) mounted to 10 6 cycles. The single centers, which are the sources of formation aggregates, survive in the result of probabilistic nature of formation and recombination genetic pairs of defects and with strictly fixed radius of recombination (the minimum inter anionic distance). For determination the character of same type defects distribution the potential of their interaction depending of defects type and reciprocal distance is calculated. For more detailed study of processes, proceeding in cells with certain sizes of aggregates, the time dependence of potential interaction is constructed. It is shown, that on primary stage the potential is negative, then it increase and approach the saturation in positive area. The minimum of interaction potential corresponds to state of physical chaos in system. Its increasing occurs with formation of same type defects aggregates. Further transition to saturation and 'undulating' character of curves explains by formation and destruction aggregates. The data indicated that - these processes occur simultaneously in cells with different sizes. It allows us to assume that the radiation defects aggregation have a fractal nature

In Situ Observation of Antisite Defect Formation during Crystal Growth

International Nuclear Information System (INIS)

Kramer, M. J.; Napolitano, R. E.; Mendelev, M. I.

2010-01-01

In situ x-ray diffraction (XRD) coupled with molecular dynamics (MD) simulations have been used to quantify antisite defect trapping during crystallization. Rietveld refinement of the XRD data revealed a marked lattice distortion which involves an a axis expansion and a c axis contraction of the stable C11b phase. The observed lattice response is proportional in magnitude to the growth rate, suggesting that the behavior is associated with the kinetic trapping of lattice defects. MD simulations demonstrate that this lattice response is due to incorporation of 1% to 2% antisite defects during growth.

DEAD-box helicase DDX27 regulates 3′ end formation of ribosomal 47S RNA and stably associates with the PeBoW-complex

Energy Technology Data Exchange (ETDEWEB)

Kellner, Markus; Rohrmoser, Michaela [Department of Molecular Epigenetics, Helmholtz Center Munich, Center for Integrated Protein Science Munich (CIPSM), Marchioninistr. 25, Munich 81377 (Germany); Forné, Ignasi [Adolf Butenandt Institute, Ludwig Maximilians University of Munich, Center for Integrated Protein Science Munich (CIPSM), Schillerstr. 44, Munich 80336 (Germany); Voss, Kirsten; Burger, Kaspar; Mühl, Bastian; Gruber-Eber, Anita [Department of Molecular Epigenetics, Helmholtz Center Munich, Center for Integrated Protein Science Munich (CIPSM), Marchioninistr. 25, Munich 81377 (Germany); Kremmer, Elisabeth [Institute of Molecular Immunology, Helmholtz Center Munich, Marchioninistr. 25, Munich 81377 (Germany); Imhof, Axel [Adolf Butenandt Institute, Ludwig Maximilians University of Munich, Center for Integrated Protein Science Munich (CIPSM), Schillerstr. 44, Munich 80336 (Germany); Eick, Dirk, E-mail: eick@helmholtz-muenchen.de [Department of Molecular Epigenetics, Helmholtz Center Munich, Center for Integrated Protein Science Munich (CIPSM), Marchioninistr. 25, Munich 81377 (Germany)

2015-05-15

PeBoW, a trimeric complex consisting of pescadillo (Pes1), block of proliferation (Bop1), and the WD repeat protein 12 (WDR12), is essential for processing and maturation of mammalian 5.8S and 28S ribosomal RNAs. Applying a mass spectrometric analysis, we identified the DEAD-box helicase DDX27 as stably associated factor of the PeBoW-complex. DDX27 interacts with the PeBoW-complex via an evolutionary conserved F×F motif in the N-terminal domain and is recruited to the nucleolus via its basic C-terminal domain. This recruitment is RNA-dependent and occurs independently of the PeBoW-complex. Interestingly, knockdown of DDX27, but not of Pes1, induces the accumulation of an extended form of the primary 47S rRNA. We conclude that DDX27 can interact specifically with the Pes1 and Bop1 but fulfils critical function(s) for proper 3′ end formation of 47S rRNA independently of the PeBoW-complex. - Highlights: • DEAD-box helicase DDX27 is a new constituent of the PeBoW-complex. • The N-terminal F×F motif of DDX27 interacts with the PeBoW components Pes1 and Bop1. • Nucleolar anchoring of DDX27 via its basic C-terminal domain is RNA dependent. • Knockdown of DDX27 induces a specific defect in 3′ end formation of 47S rRNA.

Phenomenological model of photoluminescence degradation and photoinduced defect formation in silicon nanocrystal ensembles under singlet oxygen generation

Energy Technology Data Exchange (ETDEWEB)

Gongalsky, Maxim B., E-mail: mgongalsky@gmail.com; Timoshenko, Victor Yu. [Faculty of Physics, Moscow State M.V. Lomonosov University, 119991 Moscow (Russian Federation)

2014-12-28

We propose a phenomenological model to explain photoluminescence degradation of silicon nanocrystals under singlet oxygen generation in gaseous and liquid systems. The model considers coupled rate equations, which take into account the exciton radiative recombination in silicon nanocrystals, photosensitization of singlet oxygen generation, defect formation on the surface of silicon nanocrystals as well as quenching processes for both excitons and singlet oxygen molecules. The model describes well the experimentally observed power law dependences of the photoluminescence intensity, singlet oxygen concentration, and lifetime versus photoexcitation time. The defect concentration in silicon nanocrystals increases by power law with a fractional exponent, which depends on the singlet oxygen concentration and ambient conditions. The obtained results are discussed in a view of optimization of the photosensitized singlet oxygen generation for biomedical applications.

Investigation of formation constant of complex of a new synthesized ...

African Journals Online (AJOL)

The complex formation between a newly synthesized tripodal ligand and the cation Cu2+ in water and surfactant media was studied spectrophotometrically using rank annihilation factor analysis (RAFA). According to molar ratio data the stoichiometry of complexation between the ligand and the cation Cu2+ was 1:1.

[TVT (transvaginal mesh) surgical method for complex resolution of pelvic floor defects].

Science.gov (United States)

Adamík, Z

2006-01-01

Assessment of the effects of a new surgical method for complex resolution of pelvic floor defects. Case study. Department of Obstetrics and Gynaecology, Bata Hospital, Zlín. We evaluated the procedures and results of the new TVM (transvaginal mesh) surgical method which we used in a group of 12 patients. Ten patients had vaginal prolapse following vaginal hysterectomy and in two cases there was uterine prolapse and vaginal prolapse. Only in one case there was a small protrusion in the range of 0.5 cm which we resolved by removal of the penetrated section. The resulting anatomic effect was very good in all the cases.

Perforator chimerism for the reconstruction of complex defects: A new chimeric free flap classification system.

Science.gov (United States)

Kim, Jeong Tae; Kim, Youn Hwan; Ghanem, Ali M

2015-11-01

Complex defects present structural and functional challenges to reconstructive surgeons. When compared to multiple free flaps or staged reconstruction, the use of chimeric flaps to reconstruct such defects have many advantages such as reduced number of operative procedures and donor site morbidity as well as preservation of recipient vessels. With increased popularity of perforator flaps, chimeric flaps' harvest and design has benefited from 'perforator concept' towards more versatile and better reconstruction solutions. This article discusses perforator based chimeric flaps and presents a practice based classification system that incorporates the perforator flap concept into "Perforator Chimerism". The authors analyzed a variety of chimeric patterns used in 31 consecutive cases to present illustrative case series and their new classification system. Accordingly, chimeric flaps are classified into four types. Type I: Classical Chimerism, Type II: Anastomotic Chimerism, Type III: Perforator Chimerism and Type IV Mixed Chimerism. Types I on specific source vessel anatomy whilst Type II requires microvascular anastomosis to create the chimeric reconstructive solution. Type III chimeric flaps utilizes the perforator concept to raise two components of tissues without microvascular anastomosis between them. Type IV chimeric flaps are mixed type flaps comprising any combination of Types I to III. Incorporation of the perforator concept in planning and designing chimeric flaps has allowed safe, effective and aesthetically superior reconstruction of complex defects. The new classification system aids reconstructive surgeons and trainees to understand chimeric flaps design, facilitating effective incorporation of this important reconstructive technique into the armamentarium of the reconstruction toolbox. Copyright © 2015 British Association of Plastic, Reconstructive and Aesthetic Surgeons. Published by Elsevier Ltd. All rights reserved.

Enhanced photoluminescence from single nitrogen-vacancy defects in nanodiamonds coated with phenol-ionic complexes

Science.gov (United States)

Bray, Kerem; Previdi, Rodolfo; Gibson, Brant C.; Shimoni, Olga; Aharonovich, Igor

2015-03-01

Fluorescent nanodiamonds are attracting major attention in the field of bio-sensing and bio-labeling. In this work we demonstrate a robust approach to achieve an encapsulation of individual nanodiamonds with phenol-ionic complexes that enhance the photoluminescence from single nitrogen vacancy (NV) centers. We show that single NV centres in the coated nanodiamonds also exhibit shorter lifetimes, opening another channel for high resolution sensing. We propose that the nanodiamond encapsulation reduces the non-radiative decay pathways of the NV color centers. Our results provide a versatile and assessable way to enhance photoluminescence from nanodiamond defects that can be used in a variety of sensing and imaging applications.Fluorescent nanodiamonds are attracting major attention in the field of bio-sensing and bio-labeling. In this work we demonstrate a robust approach to achieve an encapsulation of individual nanodiamonds with phenol-ionic complexes that enhance the photoluminescence from single nitrogen vacancy (NV) centers. We show that single NV centres in the coated nanodiamonds also exhibit shorter lifetimes, opening another channel for high resolution sensing. We propose that the nanodiamond encapsulation reduces the non-radiative decay pathways of the NV color centers. Our results provide a versatile and assessable way to enhance photoluminescence from nanodiamond defects that can be used in a variety of sensing and imaging applications. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr07510b

Intrinsic Defects and H Doping in WO3

KAUST Repository

Zhu, Jiajie

2017-01-18

WO3 is widely used as industrial catalyst. Intrinsic and/or extrinsic defects can tune the electronic properties and extend applications to gas sensors and optoelectonics. However, H doping is a challenge to WO3, the relevant mechanisms being hardly understood. In this context, we investigate intrinsic defects and H doping by density functional theory and experiments. Formation energies are calculated to determine the lowest energy defect states. O vacancies turn out to be stable in O-poor environment, in agreement with X-ray photoelectron spectroscopy, and O-H bond formation of H interstitial defects is predicted and confirmed by Fourier transform infrared spectroscopy.

Study on the intrinsic defects in tin oxide with first-principles method

Science.gov (United States)

Sun, Yu; Liu, Tingyu; Chang, Qiuxiang; Ma, Changmin

2018-04-01

First-principles and thermodynamic methods are used to study the contribution of vibrational entropy to defect formation energy and the stability of the intrinsic point defects in SnO2 crystal. According to thermodynamic calculation results, the contribution of vibrational entropy to defect formation energy is significant and should not be neglected, especially at high temperatures. The calculated results indicate that the oxygen vacancy is the major point defect in undoped SnO2 crystal, which has a higher concentration than that of the other point defect. The property of negative-U is put forward in SnO2 crystal. In order to determine the most stable defects much clearer under different conditions, the most stable intrinsic defect as a function of Fermi level, oxygen partial pressure and temperature are described in the three-dimensional defect formation enthalpy diagrams. The diagram visually provides the most stable point defects under different conditions.

DETERMINATION OF POSSIBLE REASONS OF DEFECT FORMATION «MICROPITTING» IN HARD-ALLOY WIRE DRAWING INSTRUMENT IN WIRE DRAWING PROCESS

Directory of Open Access Journals (Sweden)

T. P. Kurenkova

2011-01-01

Full Text Available It is determined that during operation a hard wear along with uniform attrition occurs in working canal of die because of welding of metal particles to the material of die, what results in formation of separate microholes, their enlargement and further defect creation of type “micropitting of hard alloy”.

Numerical simulation of casting process to assist in defects reduction in complex steel tidal power component

International Nuclear Information System (INIS)

Guo, E J; Zhao, S C; Wang, L P; Wu, T; Xin, B P; Tan, J J; Jia, H L

2016-01-01

In order to reduce defects and improve casting quality, ProCAST software is performed to study the solidification process of discharge bowl. Simulated results of original casting process show that the hot tearing is serious at the intersection of blades and outer or inner rings. The shrinkage porosity appears at the bottom of discharge bowl and the transition area of wall thickness. Based on the formation mechanisms of the defects, the structure of chills attached on the outer surface of discharge bowl casting is optimized. The thickness of chills ranges from 25mm to 35mm. The positions of chills corresponded to the outer surface of the T-shaped parts. Compared to the original casting design (without chills), the hot tearing and shrinkage porosity of the discharge bowl are greatly improved with addition of chills. (paper)

An inherited immunoglobulin class-switch recombination deficiency associated with a defect in the INO80 chromatin remodeling complex.

Science.gov (United States)

Kracker, Sven; Di Virgilio, Michela; Schwartzentruber, Jeremy; Cuenin, Cyrille; Forveille, Monique; Deau, Marie-Céline; McBride, Kevin M; Majewski, Jacek; Gazumyan, Anna; Seneviratne, Suranjith; Grimbacher, Bodo; Kutukculer, Necil; Herceg, Zdenko; Cavazzana, Marina; Jabado, Nada; Nussenzweig, Michel C; Fischer, Alain; Durandy, Anne

2015-04-01

Immunoglobulin class-switch recombination defects (CSR-D) are rare primary immunodeficiencies characterized by impaired production of switched immunoglobulin isotypes and normal or elevated IgM levels. They are caused by impaired T:B cooperation or intrinsic B cell defects. However, many immunoglobulin CSR-Ds are still undefined at the molecular level. This study's objective was to delineate new causes of immunoglobulin CSR-Ds and thus gain further insights into the process of immunoglobulin class-switch recombination (CSR). Exome sequencing in 2 immunoglobulin CSR-D patients identified variations in the INO80 gene. Functional experiments were performed to assess the function of INO80 on immunoglobulin CSR. We identified recessive, nonsynonymous coding variations in the INO80 gene in 2 patients affected by defective immunoglobulin CSR. Expression of wild-type INO80 in patients' fibroblastic cells corrected their hypersensitivity to high doses of γ-irradiation. In murine CH12-F3 cells, the INO80 complex accumulates at Sα and Eμ regions of the IgH locus, and downregulation of INO80 as well as its partners Reptin and Pontin impaired CSR. In addition, Reptin and Pontin were shown to interact with activation-induced cytidine deaminase. Finally, an abnormal separation of sister chromatids was observed upon INO80 downregulation in CH12-F3 cells, pinpointing its role in cohesin activity. INO80 deficiency appears to be associated with defective immunoglobulin CSR. We propose that the INO80 complex modulates cohesin function that may be required during immunoglobulin switch region synapsis. Copyright © 2014 The Authors. Published by Elsevier Inc. All rights reserved.

A study on complex formation of cadmium (II) ions, 9

International Nuclear Information System (INIS)

Matsui, Haruo

1984-01-01

Formation constants of cadmium (11) complexes with dicarboxylic acids such as oxalic, malonic, methylmalonic, succinic, and glutaric acids were determined in aqueous solutions containing 3 mol.dm -3 LiClO 4 as a constan ionic medium at 25 0 C by potentiometric titrations. It was reported in the previous works that cadmium (11)- aspartic acid complexes contained two chelate rings. However, a problem remained whether the second chelate ring could be formed by six membered-ring containing -O-Cd-N- bond or by seven membered-ring containing -O-Cd-O- bond. The results of the present work suggested that it would be formed by a six membered ring. Cadmium (11) ions were coordinated with a carboxylic group of the dicarboxylic acids studied, and formed no chelate ring within the complexes. The white precipitate appeared in the solution containing cadmium (11) ion and oxalic acid, in the pH range below 3.0, therefore, the chelate formation was not ascertained in this case. The formation constants, log βsub(pr)= log([Cdsub(p)Lsub(r)sup((2p-2r)+)]/([Cd 2+ ]sup(p)[L 2- ]sup(r))), of the complexes were: log β 11 = 1.98, log β 12 = 3.05 for cadmium (11)-malonic acid; log β 11 = 2.28, log β 12 = 3.06 for cadmium (11)-methylmalonic acid; log β 11 = 1.78, log β 12 = 3.08 for cadmium (11)-succinic acid; log β 11 = 1.85, log β 12 = 3.28 for cadmium (11)-glutaric acid complexes. (author)

The role of plasma proteins in formation of obstructive protamine complexes

International Nuclear Information System (INIS)

De Paulis, R.; Mohammad, S.F.; Chiariello, L.; Morea, M.; Olsen, D.B.

1991-01-01

Formation of complexes between heparin and protamine (in saline), or heparin, plasma proteins, and protamine (in plasma) was assessed by measurements of light transmission through different test solutions. To examine the formation of these complexes, 125I-labeled protamine was used. Addition of 125I-protamine to plasma or blood resulted in the sedimentation of 125I-protamine in the form of insoluble complexes. This complex formation was not affected by the presence of heparin, suggesting that protamine-plasma protein interaction may be primarily responsible for precipitation of 125I-protamine. To assess the capability of these complexes to obstruct the pulmonary circulation, an in vitro experimental model was developed. Citrated serum, plasma, blood, or saline were allowed to flow through a glass bead column with the help of a peristaltic pump. A pressure transducer positioned before the column allowed pressure measurements at a constant flow rate during the experiment. Mixing of protamine with plasma or blood prior to their passage through the glass bead column resulted in a significant increase in pressure suggesting that the column was being clogged with insoluble complexes. The increase in pressure occurred both in the presence and absence of heparin in plasma or blood. Under identical experimental conditions, the increase in pressure was insignificant when protamine was added to saline or serum regardless of whether heparin was present or absent. This was further confirmed by the use of 125I-protamine. These observations suggest that protamine forms insoluble complexes with certain plasma proteins. Based on these observations, it is hypothesized that following intravenous administration, protamine immediately forms complexes in circulating blood

H3K9me3 demethylase Kdm4d facilitates the formation of pre-initiative complex and regulates DNA replication.

Science.gov (United States)

Wu, Rentian; Wang, Zhiquan; Zhang, Honglian; Gan, Haiyun; Zhang, Zhiguo

2017-01-09

DNA replication is tightly regulated to occur once and only once per cell cycle. How chromatin, the physiological substrate of DNA replication machinery, regulates DNA replication remains largely unknown. Here we show that histone H3 lysine 9 demethylase Kdm4d regulates DNA replication in eukaryotic cells. Depletion of Kdm4d results in defects in DNA replication, which can be rescued by the expression of H3K9M, a histone H3 mutant transgene that reverses the effect of Kdm4d on H3K9 methylation. Kdm4d interacts with replication proteins, and its recruitment to DNA replication origins depends on the two pre-replicative complex components (origin recognition complex [ORC] and minichromosome maintenance [MCM] complex). Depletion of Kdm4d impairs the recruitment of Cdc45, proliferating cell nuclear antigen (PCNA), and polymerase δ, but not ORC and MCM proteins. These results demonstrate a novel mechanism by which Kdm4d regulates DNA replication by reducing the H3K9me3 level to facilitate formation of pre-initiative complex. © The Author(s) 2016. Published by Oxford University Press on behalf of Nucleic Acids Research.

Ab-initio calculation for cation vacancy formation energy in anti-fluorite structure

Science.gov (United States)

Saleel, V. P. Saleel Ahammad; Chitra, D.; Veluraja, K.; Eithiraj, R. D.

2018-04-01

Lithium oxide (Li2O) has been suggested as a suitable breeder blanket material for fusion reactors. Li+ vacancies are created by neutron irradiation, forming bulk defect complex whose extra character is experimentally unclear. We present a theoretical study of Li2O using density functional theory (DFT) with a plane-wave basis set. The generalized gradient approximation (GGA) and local-density approximation (LDA) were used for exchange and correlation. Here we address the total energy for defect free, cation defect, cation vacancy and vacancy formation energy in Li2O crystal in anti-fluorite structure.

Metastable and bistable defects in silicon

International Nuclear Information System (INIS)

Mukashev, Bulat N; Abdullin, Kh A; Gorelkinskii, Yurii V

2000-01-01

Existing data on the properties and structure of metastable and bistable defects in silicon are analyzed. Primary radiation-induced defects (vacancies, self-interstitial atoms, and Frenkel pairs), complexes of oxygen, carbon, hydrogen, and other impurity atoms and defects with negative correlation energy are considered. (reviews of topical problems)

Deterministic Role of Collision Cascade Density in Radiation Defect Dynamics in Si

Science.gov (United States)

Wallace, J. B.; Aji, L. B. Bayu; Shao, L.; Kucheyev, S. O.

2018-05-01

The formation of stable radiation damage in solids often proceeds via complex dynamic annealing (DA) processes, involving point defect migration and interaction. The dependence of DA on irradiation conditions remains poorly understood even for Si. Here, we use a pulsed ion beam method to study defect interaction dynamics in Si bombarded in the temperature range from ˜-30 ° C to 210 °C with ions in a wide range of masses, from Ne to Xe, creating collision cascades with different densities. We demonstrate that the complexity of the influence of irradiation conditions on defect dynamics can be reduced to a deterministic effect of a single parameter, the average cascade density, calculated by taking into account the fractal nature of collision cascades. For each ion species, the DA rate exhibits two well-defined Arrhenius regions where different DA mechanisms dominate. These two regions intersect at a critical temperature, which depends linearly on the cascade density. The low-temperature DA regime is characterized by an activation energy of ˜0.1 eV , independent of the cascade density. The high-temperature regime, however, exhibits a change in the dominant DA process for cascade densities above ˜0.04 at.%, evidenced by an increase in the activation energy. These results clearly demonstrate a crucial role of the collision cascade density and can be used to predict radiation defect dynamics in Si.

Complex 3D Vortex Lattice Formation by Phase-Engineered Multiple Beam Interference

Directory of Open Access Journals (Sweden)

Jolly Xavier

2012-01-01

Full Text Available We present the computational results on the formation of diverse complex 3D vortex lattices by a designed superposition of multiple plane waves. Special combinations of multiples of three noncoplanar plane waves with a designed relative phase shift between one another are perturbed by a nonsingular beam to generate various complex 3D vortex lattice structures. The formation of complex gyrating lattice structures carrying designed vortices by means of relatively phase-engineered plane waves is also computationally investigated. The generated structures are configured with both periodic as well as transversely quasicrystallographic basis, while these whirling complex lattices possess a long-range order of designed symmetry in a given plane. Various computational analytical tools are used to verify the presence of engineered geometry of vortices in these complex 3D vortex lattices.

A model for the formation of lattice defects at silicon oxide precipitates in silicon

International Nuclear Information System (INIS)

Vanhellemont, J.; Gryse, O. de; Clauws, P.

2003-01-01

The critical size of silicon oxide precipitates and the formation of lattice defects by the precipitates are discussed. An expression is derived allowing estimation of self-interstitial emission by spherical precipitates as well as strain build-up during precipitate growth. The predictions are compared with published experimental data. A model for stacking fault nucleation at oxide precipitates is developed based on strain and self-interstitial accumulation during the thermal history of the wafer. During a low-temperature treatment high levels of strain develop. During subsequent high-temperature treatment, excess strain energy in the precipitate is released by self-interstitial emission leading to favourable conditions for stacking fault nucleation

The effect of temperature and time on the formation of amylose- lysophosphatidylcholine inclusion complexes

NARCIS (Netherlands)

Ahmadi-Abhari, S.; Woortman, A.J.J.; Oudhuis, A.A.C.M.; Hamer, R.J.; Loos, K.

2014-01-01

The formation of amylose inclusion complexes could help to decrease the susceptibility of starch granules against amylase digestion. We studied the formation of amyloselysophosphatidylcholine (LPC) inclusion complexes at temperatures at and below the gelatinization temperature of starch, using DSC,

Robotic Transversus Abdominis Release (TAR: is it possible to offer minimally invasive surgery for abdominal wall complex defects?

Directory of Open Access Journals (Sweden)

MARIA VITÓRIA FRANÇA DO AMARAL

Full Text Available ABSTRACT We describe the preliminary national experience and the early results of the use of robotic surgery to perform the posterior separation of abdominal wall components by the Transversus Abdominis Release (TAR technique for the correction of complex defects of the abdominal wall. We performed the procedures between 04/2/2015 and 06/15/2015 and the follow-up time was up to six months, with a minimum of two months. The mean surgical time was five hours and 40 minutes. Two patients required laparoscopic re-intervention, since one developed hernia by peritoneal migration of the mesh and one had mesh extrusion. The procedure proved to be technically feasible, with a still long surgical time. Considering the potential advantages of robotic surgery and those related to TAR and the results obtained when these two techniques are associated, we conclude that they seem to be a good option for the correction of complex abdominal wall defects.

The effect of temperature and time on the formation of amylose- lysophosphatidylcholine inclusion complexes

NARCIS (Netherlands)

Ahmadiabhari, Salomeh; Woortman, Albert J. J.; Oudhuis, A. A. C. M. (Lizette); Hamer, Rob J.; Loos, Katja

The formation of amylose inclusion complexes could help to decrease the susceptibility of starch granules against amylase digestion. We studied the formation of amylose-lysophosphatidylcholine (LPC) inclusion complexes at temperatures at and below the gelatinization temperature of starch, using DSC,

The effect of temperature and time on the formation of amylose–lysophosphatidylcholine inclusion complexes

NARCIS (Netherlands)

Ahmadi-Abhari, S.; Woortman, A.J.J.; Oudhuis, A.A.C.M.; Hamer, R.J.; Loos, K.

2014-01-01

The formation of amylose inclusion complexes could help to decrease the susceptibility of starch granules against amylase digestion. We studied the formation of amylose–lysophosphatidylcholine (LPC) inclusion complexes at temperatures at and below the gelatinization temperature of starch, using DSC,

Research in Hydrogen Passivation of Defects and Impurities in Silicon: Final Report, 2 May 2000-2 July 2003

International Nuclear Information System (INIS)

Ashok, S.

2004-01-01

This subcontract report describes hydrogenating Si samples by different methods such as low-energy implantation, electron cyclotron resonance (ECR) plasma, and thermal diffusion. The samples were provided through NREL. The experimental work, carried out at Penn State, involved the study of hydrogen interaction with defects, trapping, migration, and formation of complexes. The principal vehicle for the latter study was ion implantation, and the intent to understand mechanisms of defect passivation and activation by hydrogen. NREL implemented a study of hydrogen passivation of impurities and defects in silicon solar cells. The work included theoretical and experimental components performed at different universities. The theoretical studies consisted of the calculation of the structure and parameters related to hydrogen diffusion and interactions of hydrogen with transition-metal impurities in silicon. Experimental studies involved measurements of hydrogen and hydrogen-impurity complexes, and diffusion properties of various species of hydrogen in Si. The experimental work at Penn State included introduction of hydrogen in a variety of PV Si by ECR plasma, low-energy ion implantation, and thermal diffusion. The specific tasks were the evaluation of hydrogen interaction with defects engineered by ion implantation; defect passivation, activation, and migration in hydrogenated Si under thermal anneal; and electrical activity of hydrogen-impurity complexes. Electrical characterization entailed I-V and C-V measurements, spreading resistance, and deep-level transient spectroscopy (DLTS)

Determination of stability constants of lanthanide nitrate complex formation using a solvent extraction technique

International Nuclear Information System (INIS)

Andersson, S.; Ekberg, C.; Liljenzin, J.O.; Nilsson, M.; Skarnemark, G.; Eberhardt, K.

2006-01-01

For lanthanides and actinides, nitrate complex formation is an important factor with respect to the reprocessing of nuclear fuels and in studies that treat partitioning and transmutation/conditioning. Different techniques, including microcalorimetry, various kinds of spectroscopy, ion-exchange and solvent extraction, can be used to determine stability constants of nitrate complex formation. However, it is uncommon that all lanthanides are studied at the same time, using the same experimental conditions and technique. The strengths of the complexes are different for lanthanides and actinides, a feature that may assist in the separation of the two groups. This paper deals with nitrate complex formation of lanthanides using a solvent extraction technique. Trace amounts of radioactive isotopes of lanthanides were produced at the TRIGA Mainz research reactor and at the Institutt for Energiteknikk in Kjeller, Norway (JEEP II reactor). The extraction of lanthanide ions into an organic phase consisting of 2, 6-bis-(benzoxazolyl)-4-dodecyloxylpyridine, 2-bromodecanoic acid and tert-butyl benzene as a function of nitrate ion concentration in the aqueous phase was studied in order to estimate the stability constants of nitrate complex formation. When the nitrate ion concentration is increased in the aqueous phase, the nitrate complex formation starts to compete with the extraction of metal ions. Thus the stability constants of nitrate complex formation can be estimated by measuring the decrease in extraction and successive fitting of an appropriate model. Extraction curves for La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Dy, Ho and Er were obtained and stability constants for their nitrate complex formation were estimated. Tb, Tm, Yb and Lu were also investigated, but no stability constants could be determined. The distribution ratios for the metal ions at low nitrate ion concentration were obtained at the same time, showing the effect of lanthanide contraction resulting in decreasing

The role of point defects and defect complexes in silicon device processing. Summary report and papers

Energy Technology Data Exchange (ETDEWEB)

Sopori, B.; Tan, T.Y.

1994-08-01

This report is a summary of a workshop hold on August 24--26, 1992. Session 1 of the conference discussed characteristics of various commercial photovoltaic silicon substrates, the nature of impurities and defects in them, and how they are related to the material growth. Session 2 on point defects reviewed the capabilities of theoretical approaches to determine equilibrium structure of defects in the silicon lattice arising from transitional metal impurities and hydrogen. Session 3 was devoted to a discussion of the surface photovoltaic method for characterizing bulk wafer lifetimes, and to detailed studies on the effectiveness of various gettering operations on reducing the deleterious effects of transition metals. Papers presented at the conference are also included in this summary report.

Mechanisms of defect complex formation and environmental-assisted fracture behavior of iron aluminides

Energy Technology Data Exchange (ETDEWEB)

Cooper, B.R.; Muratov, L.S.; Kang, B.S.J.; Li, K.Z. [West Virginia Univ., Morgantown, WV (United States)

1997-12-01

Iron aluminide has excellent corrosion resistance in high-temperature oxidizing-sulfidizing environments; however, there are problems at room and medium temperature with hydrogen embrittlement as related to exposure to moisture. In this research, a coordinated computational modeling/experimental study of mechanisms related to environmental-assisted fracture behavior of selected iron aluminides is being undertaken. The modeling and the experimental work will connect at the level of coordinated understanding of the mechanisms for hydrogen penetration and for loss of strength and susceptibility to fracture. The focus of the modeling component at this point is on the challenging question of accurately predicting the iron vacancy formation energy in Fe{sub 3}A{ell} and the subsequent tendency, if present, for vacancy clustering. The authors have successfully performed, on an ab initio basis, the first calculation of the vacancy formation energy in Fe{sub 3}A{ell}. These calculations include lattice relaxation effects which are quite large. This has significant implications for vacancy clustering effects with consequences to be explored for hydrogen diffusion. The experimental work at this stage has focused on the relationship of the choice and concentration of additives to the improvement of resistance to hydrogen embrittlement and hence to the fracture behavior. For this reason, comparative crack growth tests of FA-186, FA-187, and FA-189 iron aluminides (all with basic composition of Fe-28A{ell}-5Cr, at % with micro-alloying additives of Zr, C or B) under, air, oxygen, or water environment have been performed. These tests showed that the alloys are susceptible to room temperature hydrogen embrittlement in both B2 and DO{sub 3} conditions. Test results indicated that FA-187, and FA-189 are intrinsically more brittle than FA-186.

PAT challenges routine techniques on defect spectroscopy in material science

International Nuclear Information System (INIS)

Badawi, E.A.

2005-01-01

Atomic or Point Defects are the most simple defects in solids. Due to the small size their direct observation by the routine techniques is not possible. A single type of defects (thermal defect) was observed in the quenching process. Using the Arrhenius method and threshold method we recommended the accurate both method of treatments. The calculated values for formation enthalpies and self-diffusion using positron lifetime and Doppler broadening in a good agreement in (A356.0) and (A413.1). Specifically it is show how PAT detect defect concentrations, (formation- migration) enthalpies and grain size for the material under investigation. Most of the these data are reported

Influence of phosphorus on point defects in an austenitic alloy

International Nuclear Information System (INIS)

Boulanger, L.

1988-06-01

The influence of phosphorus on points defects clusters has been studied in an austenitic alloy (Fe/19% at. Cr/13% at. Ni). Clusters are observed by transmission electron microscopy. After quenching and annealing, five types of clusters produced by vacancies or phosphorus-vacancies complexes are observed whose presence depends on cooling-speed. Vacancy concentration (with 3.6 10 -3 at. P) in clusters is about 10 -5 and apparent vacancy migration is 2 ± 0.1 eV. These observations suggest the formation of metastable small clusters during cooling which dissociate during annealing and migrate to create the observed clusters. With phosphorus, the unfrequent formation of vacancy loops has been observed during electron irradiation. Ions irradiations show that phosphorus does not favour nucleation of interstitial loops but slowers their growth. It reduces swelling by decreasing voids diameter. Phosphorus forms vacancy complexes whose role is to increase the recombination rate and to slow vacancy migration [fr

Radiographic Assessment of Bone Formation Using rhBMP2 at Maxillary Periapical Surgical Defects: A Case Series.

Science.gov (United States)

Kumar, M Siva; Kumar, M Hari; Vishalakshi, K; Sabitha, H

2016-04-01

Periapical cysts are the most common inflammatory odontogenic cysts arising from untreated dental caries with pulp necrosis and periapical infection. The choice of treatment is often influenced by various factors like size, extension of the lesion, proximity to vital structures, systemic condition and compliance of the patient too. The treatment protocol for management of periapical cysts is still under discussion and options vary from conservative treatment by means of endodontic technique to surgical treatment like decompression or a marsupialisation or even to enucleation. Large bony defect secondary to periapical surgery compromising the tooth integrity often requires bone graft to enhance bone formation and thus restoring function at the earliest. The present case series included 10 patients who had established periapical pathology secondary to history of trauma on upper anterior teeth as well patients with history of carious teeth with an apparent failure in root canal therapy. All ten patients were treated with cyst enucleation and apiceotomy along with 1.4cc Recombinant Human Bone Morphogenetic Protein-2 soaked Absorbable Collagen Sponge implantation at surgical defect. Radiographs and clinical examinations were done upto 3 months to evaluate healing. Radiographic and clinical assessments revealed bone regeneration and restoration of the maxillary surgical defects in all 10 patients. No evidence of graft failure was noted. The Recombinant Human Bone Morphogenetic Protein-2 soaked Absorbable Collagen Sponge carrier is thus proved to be a viable option for the treatment of maxillary periapical surgical defects.

Defect evolution in a Ni−Mo−Cr−Fe alloy subjected to high-dose Kr ion irradiation at elevated temperature

Energy Technology Data Exchange (ETDEWEB)

Reyes, Massey de los [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW, 2234 (Australia); Nuclear Fuel Cycle Royal Commission (NFCRC), 50 Grenfell Street Adelaide South Australia, 5000 (Australia); Voskoboinikov, Roman [The National Research Centre ‘Kurchatov Institute’, Kurchatov Sq 1, Moscow 123182 (Russian Federation); Kirk, Marquis A. [Nuclear Engineering Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Huang, Hefei [Shanghai Institute of Applied Physics, Chinese Academy of Science (CAS), 2019 Jialuo Road, Jiading District, Shanghai 201800 (China); Lumpkin, Greg [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW, 2234 (Australia); Bhattacharyya, Dhriti, E-mail: dhriti.bhattacharyya@ansto.gov.au [Australian Nuclear Science and Technology Organisation, Lucas Heights, NSW, 2234 (Australia)

2016-06-15

A candidate Ni−Mo−Cr−Fe alloy (GH3535) for application as a structural material in a molten salt nuclear reactor was irradiated with 1 MeV Kr{sup 2+} ions (723 K, max dose of 100 dpa) at the IVEM-Tandem facility. The evolution of defects like dislocation loops and vacancy- and self-interstitial clusters was examined in-situ. For obtaining a deeper insight into the true nature of these defects, the irradiated sample was further analysed under a TEM post-facto. The results show that there is a range of different types of defects formed under irradiation. Interaction of radiation defects with each other and with pre-existing defects, e.g., linear dislocations, leads to the formation of complex microstructures. Molecular dynamics simulations used to obtain a greater understanding of these defect transformations showed that the interaction between linear dislocations and radiation induced dislocation loops could form faulted structures that explain the fringed contrast of these defects observed in TEM.

Influence of preliminary reactor irradiation on defect formation in quartz fibers under γ- ray activity

International Nuclear Information System (INIS)

Ashurov, M.Kh.; Baydjanov, M.I.; Ibragimov, J.D.; Rustamov, I.R.; Islamov, A.Kh.; Nuritdinov, I.; Gasanov, E.M.; Yuldashev, B.S.

2006-01-01

Full text: For study of influence of preliminary structure defects and type of cladding material on additional defects accumulation kinetics we investigated the absorption spectra of optical fibers (OF) marked FVP-400 (quartz core and quartz clad) and FSHA-800 (quartz core and polymeric clad) preliminary irradiated by fast neutrons fluencies 10 12 , 10 13 , 10 14 , 10 15 cm -2 before and after additional irradiation by γ-rays of 60 Co source. Preliminary irradiation of samples was conducted in cadmium-plated channel of the reactor. Dose rate of accompanying γ-radiation is determined as 1250 R/s using KI quartz glass based dosimeter. The spectra of the induced absorption (losses) were calculated by an expression A(λ)=(10/L)x lg[T(λ)/T 0 (λ)], where T 0 (λ) and (λ) are transmissions of samples before and after irradiation, L-sample length [m], A(λ)- optical losses [dB/m]. It's established that the transformation processes of previously existing structure damages arising during fiber drawing into other ones and creations of additional defects under influence of neutrons depends on hydroxyl content and type of fibers cladding material. It's shown that under influence of γ-rays at doses 10 5 , 5·10 5 , 10 6 , 5.10 6 , 10 7 , 5·10 7 and 10 8 R the two-stage accumulation of non-bridging oxygen hole centers (NBOHC) is observed in preliminary neutron-irradiated OF. The first stage is caused by appearance of potential NBOHC arising during fiber drawing and irradiation of OF by neutrons. The dose value of γ-rays at the beginning of the second stage that is connected to creation of additional NBOHC under γ-rays action decreases with growth of preliminary irradiation fluence. We suppose that under neutron irradiation of OF along with transformation of previously existing damages and creation of additional point defects there is formation of areas with the higher density than in quartz glass which concentration increases with growth of irradiation fluence. Hence

Formation constants of binary complexes of lanthanides with 2-hydroxymethyl-benzimidazole

Energy Technology Data Exchange (ETDEWEB)

Nagendram, A; Omprakash, K L; Chandra Pal, A V; Reddy, M L.N.

1988-03-01

Proton-ligand and metal-ligand formation constants of binary complexes of La(III), Pr(III), Nd(III), Gd(III), Dy(III) and Y(III) with 2-hydroxymethylbenzimidazole have been determined pH-metrically in 50 per cent v/v aq dioxane medium at 30deg, 40deg and 50degC and I=0.1 M (NaClO/sub 4/). The theromdynamic parameters of complex formation have been evaluated. Stabilities (log ..beta../sub 2/ values) of the chelates increase with decrease in ionic radius of the metal (Dy(III) > Gd(III) > Y(III) > Nd(III) > Pr(III) > La(III)). (author). 7 refs.

Complex formation between neptunium(V) and various thiosemicarbazide derivatives in aqueous solution

International Nuclear Information System (INIS)

Chuguryan, D.G.; Dzyubenko, V.I.; Gerbeleu, N.V.

1987-01-01

Complex formation between neptunium(V) and various thiosemicarbazide derivatives in solution has been studied spectrophotometrically in the pH range 4-10. Stepwise formation of three types of complexes, with composition NpO 2 HA, NpO 2 A - , and NpOHA 2- , has been demonstrated with salicylaldehyde thiosemicarbazone (H 2 L) and salicylaldehyde S-methyl-isothiosemicarbazone (H 2 Q) at t = 25 +/- 1 0 C and μ = 0.05. The logarithmic stability constants of the first two complexes are 5.14 +/- 0.06, 11.85 +/- 0.04 and 8.42 +/- 0.09, 13.33 +/- 0.015 for H 2 L and H 2 Q, respectively; equilibrium constants for the formation of hydroxo complexes of the form NpO 2 OHL 2- and NpO 2 OHQ 2- were also determined, and found to be equal to (2.23 +/-0.37) x 10 -5 and (5.02 +/- 0.9) x 10 -5 , respectively. In the case of S-methyl-N 1 ,N 4 -bis(salicylidene)isothiosemicarbazide (H 2 Z), only one type of complex is formed under these experimental conditions, namely, NpO 2 Z - , with a logarithmic stability constant of 4.78 +/- 0.03. Dissociation constants for H 2 Q and H 2 Z were also determined

Role of masking oxide on silicon in processes of defect generation at formation of SIMOX structures

CERN Document Server

Askinazi, A Y; Miloglyadova, L V

2002-01-01

One investigated into Si-SiO sub 2 structures formed by implantation of oxygen ions into silicon (SIMOX-technology) by means of techniques based on measuring of high-frequency volt-farad characteristics and by means of electroluminescence. One determined existence of electrically active centres and of luminescence centres in the formed oxide layer near boundary with silicon. One clarified the role SiO sub 2 masking layer in silicon in defect generation under formation of the masked oxide layer. One established dependence of concentration of electrically active and luminescence centres on thickness of masking layer

First-principles study of point defects in CePO{sub 4} monazite

Energy Technology Data Exchange (ETDEWEB)

Yi, Yong; Zhao, Xiaofeng [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Teng, Yuancheng, E-mail: tyc239@163.com [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China); Bi, Beng [Joint Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010 (China); Wang, Lili [Institute of Computer Application, China Academy of Engineering Physics, Mianyang 621900 (China); Wu, Lang; Zhang, Kuibao [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010 (China)

2016-12-15

CePO{sub 4} monazite is an important radiation-resistant material that may act as a potential minor actinides waste form. Here, we present the results of the calculations for the basic radiation defect modellings in CePO{sub 4} crystals, along with the examination of their defect formation energies and effect of the defect concentrations. This study focused on building a fully-relaxed CePO{sub 4} model with the step iterative optimization from the DFT-GGA calculations using the VASP and CASTEP databases. The results show that the Frenkel defect configuration resulting from the center interstitials has a lower energy when compared to two adjacent orthophosphate centers (the saddle point position). High formation energies were found for all the types of intrinsic Frenkel and vacancy defects. The formation energies conform to the following trend (given in the decreasing order of energy): Ce Frenkel (12.41 eV) > O Frenkel (11.02 eV) > Ce vacancy (9.09 eV) > O vacancy (6.69 eV). We observed almost no effect from the defect concentrations on the defect formation energies.

Radiation damage in silicon. Defect analysis and detector properties

Energy Technology Data Exchange (ETDEWEB)

Hoenniger, F.

2008-01-15

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after {gamma}-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO{sub i}, C{sub i}O{sub i}, C{sub i}C{sub s}, VP or V{sub 2} several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO{sub 2} defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep

Radiation damage in silicon. Defect analysis and detector properties

International Nuclear Information System (INIS)

Hoenniger, F.

2008-01-01

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after γ-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO i , C i O i , C i C s , VP or V 2 several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO 2 defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep acceptor, a model has been introduced to

Complex formation between menadione and cetylethylmorpholinium ethosulfate: effect on uv photodegradation of menadione

International Nuclear Information System (INIS)

Kowarski, C.R.; Ghandi, H.I.

1975-01-01

The process of menadione photodegradation can be enhanced or diminished by other compounds. The presence of the quaternary ammonium compound cetylethylmorpholinium ethosulfate (I) in solutions of menadione was found to slow the rate of photodegradation by uv light (253.7 nm). The mechanism of this effect may be due to complex formation between menadione and I. Complex formation was demonstrated by a shift in the absorption peaks of menadione from 245 and 260 nm to 251.5 and 261.5 nm, respectively. The equilibrium constant of this complex was calculated to be 1.647 M

A Study of Defect Behavior in Almandine Garnet

Science.gov (United States)

Geiger, C. A.; Brearley, A. J.; Dachs, E.; Tipplet, G.; Rossman, G. R.

2016-12-01

Transport and diffusion in crystals are controlled by defects. However, a good understanding of the defect types in many silicates, including garnet, is not at hand. We undertook a study on synthetic almandine, ideal end-member Fe3Al2Si3O12, to better understand its precise chemical and physical properties and defect behavior. Crystals were synthesized at high pressures and temperatures under different fO2 conditions using various starting materials with H2O and without. The almandine obtained came in polycrystalline and single-crystal form. The synthetic reaction products and crystals were carefully characterized using X-ray powder diffraction, electron microprobe and TEM analysis and with 57Fe Mössbauer, UV/VIS single-crystal absorption and IR single-crystal spectroscopy. Various possible intrinsic defects, such as the Frenkel, Schottky and site-disorder types, along with Fe3+, in both synthetic and natural almandine crystals, were analyzed based on model defects expressed in Kröger-Vink notation. Certain types of minor microscopic- to macroscopic-sized precipitation or exsolution phases, including some that are nanosized, that are observed in synthetic almandine (e.g., magnetite), as well as in more compositionally complex natural crystals (e.g., magnetite, rutile, ilmenite), may result from defect reactions. An explanation for their origin through minor amounts of defects in garnet has certain advantages over other models that have been put forth in the literature that assume strict garnet stoichiometry for their formation and/or open-system atomic transport over relatively long length scales. Physical properties, including magnetic, electrical conductivity and diffusion behavior, as well as the color, of almandine are also analyzed in terms of various possible model defects. It is difficult, if not impossible, to synthesize stoichiometric end-member almandine, Fe3Al2Si3O12, in the laboratory, as small amounts of extrinsic OH- and/or Fe3+ defects, for example

Defects in electron irradiated vitreous SiO2 probed by positron annihiliation

International Nuclear Information System (INIS)

Uedono, Akira; Tanigawa, Shoichiro; Kawano, Takao; Itoh, Hisayoshi

1994-01-01

Defects in 3 MeV electron irradiated vitreous SiO 2 (v-SiO 2 ) were probed by the positron annihilation technique. For unirradiated v-SiO 2 specimens, almost all positrons were found to annihilate from positronium (Ps) states. This high formation probability of Ps was attributed to the trapping of positrons by open-space defects. The formation probability of Ps was decreased by the electron irradiation. The observed inhibition of the Ps formation was attributed to the trapping of positrons by point defects introduced and/or activated by the irradiation. From measurements of the lifetime distribution of Ps, it was found that, by the electron irradiation, the mean size of open-space defects was decreased and the size distribution of such defects was broadened. (Author)

Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2

International Nuclear Information System (INIS)

Makkonen, Ilja; Korhonen, Esa; Prozheeva, Vera; Tuomisto, Filip

2016-01-01

Positron annihilation spectroscopy, when combined with supporting high-quality modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment around cation vacancies, the main open-volume defects trapping positrons in measurements made for transparent semiconducting oxides. Changes in the positron annihilation signal due to external manipulation such as irradiation and annealing can be correlated with the associated changes in the sizes of the detected vacancy clusters. Our examples for ZnO, In 2 O 3 and SnO 2 demonstrate that oxygen vacancies in oxides can be detected directly using positron annihilation spectroscopy when they are complexed with cation vacancies. (paper)

Identification of vacancy defect complexes in transparent semiconducting oxides ZnO, In2O3 and SnO2

Science.gov (United States)

Makkonen, Ilja; Korhonen, Esa; Prozheeva, Vera; Tuomisto, Filip

2016-06-01

Positron annihilation spectroscopy, when combined with supporting high-quality modeling of positron states and annihilation in matter, is a powerful tool for detailed defect identification of vacancy-type defects in semiconductors and oxides. Here we demonstrate that the Doppler broadening of the positron annihilation radiation is a very sensitive means for observing the oxygen environment around cation vacancies, the main open-volume defects trapping positrons in measurements made for transparent semiconducting oxides. Changes in the positron annihilation signal due to external manipulation such as irradiation and annealing can be correlated with the associated changes in the sizes of the detected vacancy clusters. Our examples for ZnO, In2O3 and SnO2 demonstrate that oxygen vacancies in oxides can be detected directly using positron annihilation spectroscopy when they are complexed with cation vacancies.

Spectroscopic studies on U(VI)-salicylate complex formation with multiple equilibria

Energy Technology Data Exchange (ETDEWEB)

Cha, W.; Cho, H.R.; Jung, E.C.; Park, K.K.; Kim, W.H.; Song, K. [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of). Nuclear Chemistry Research Div.

2012-07-01

This study investigates multiple equilibria related to the formation of the U(VI)-salicylate complex in a pH range of 3.0-5.5 using UV-Vis absorption and fluorescence measurement techniques. The absorbance changes at the characteristic charge-transfer bands of the complex were monitored, and the results indicated the presence of multiple equilibria and the formation of both 1:1 and 1:2 (U(VI):salicylate) complexes possessing bi-dentate chelate structures. The determined step-wise formation constants (log K{sub 1:1} and log K{sub 1:2}) are as follows: 12.5 {+-} 0.1 and 11.4 {+-} 0.2 for salicylate, 11.2 {+-} 0.1 and 10.1 {+-} 0.2 for 5-sulfosalicylate, and 12.4 {+-} 0.1 and 11.4 {+-} 0.1 for 2,6-dihydroxybenzoate, respectively. The molar absorptivities of the complexes are also provided. Furthermore, time-resolved laser-induced luminescence spectra of U(VI) species demonstrate the presence of both a dynamic and static quenching process upon the addition of a salicylate ligand. Particularly for the luminescent hydroxouranyl species, a strong static quenching effect is observed. The results suggest that both the UO{sub 2}(HSal){sup +} and the U(VI)-Sal chelate complexes serve as ground-state complexes that induce static quenching. The Stern-Volmer parameters were derived based on the measured luminescent intensity and lifetime data. The static quenching constants (log K{sub S}) obtained are 3.3 {+-} 0.1, 4.9 {+-} 0.1, and 4.4 {+-} 0.1 for UO{sub 2}{sup 2+}, (UO{sub 2}){sub 2}(OH){sub 2}{sup 2+} and (UO{sub 2}){sub 3}(OH){sub 5}{sup +}, respectively. (orig.)

Spectroscopic studies on U(VI)-salicylate complex formation with multiple equilibria

International Nuclear Information System (INIS)

Cha, W.; Cho, H.R.; Jung, E.C.; Park, K.K.; Kim, W.H.; Song, K.

2012-01-01

This study investigates multiple equilibria related to the formation of the U(VI)-salicylate complex in a pH range of 3.0-5.5 using UV-Vis absorption and fluorescence measurement techniques. The absorbance changes at the characteristic charge-transfer bands of the complex were monitored, and the results indicated the presence of multiple equilibria and the formation of both 1:1 and 1:2 (U(VI):salicylate) complexes possessing bi-dentate chelate structures. The determined step-wise formation constants (log K 1:1 and log K 1:2 ) are as follows: 12.5 ± 0.1 and 11.4 ± 0.2 for salicylate, 11.2 ± 0.1 and 10.1 ± 0.2 for 5-sulfosalicylate, and 12.4 ± 0.1 and 11.4 ± 0.1 for 2,6-dihydroxybenzoate, respectively. The molar absorptivities of the complexes are also provided. Furthermore, time-resolved laser-induced luminescence spectra of U(VI) species demonstrate the presence of both a dynamic and static quenching process upon the addition of a salicylate ligand. Particularly for the luminescent hydroxouranyl species, a strong static quenching effect is observed. The results suggest that both the UO 2 (HSal) + and the U(VI)-Sal chelate complexes serve as ground-state complexes that induce static quenching. The Stern-Volmer parameters were derived based on the measured luminescent intensity and lifetime data. The static quenching constants (log K S ) obtained are 3.3 ± 0.1, 4.9 ± 0.1, and 4.4 ± 0.1 for UO 2 2+ , (UO 2 ) 2 (OH) 2 2+ and (UO 2 ) 3 (OH) 5 + , respectively. (orig.)

Ion channeling study of defects in compound crystals using Monte Carlo simulations

Science.gov (United States)

Turos, A.; Jozwik, P.; Nowicki, L.; Sathish, N.

2014-08-01

Ion channeling is a well-established technique for determination of structural properties of crystalline materials. Defect depth profiles have been usually determined basing on the two-beam model developed by Bøgh (1968) [1]. As long as the main research interest was focused on single element crystals it was considered as sufficiently accurate. New challenge emerged with growing technological importance of compound single crystals and epitaxial heterostructures. Overlap of partial spectra due to different sublattices and formation of complicated defect structures makes the two beam method hardly applicable. The solution is provided by Monte Carlo computer simulations. Our paper reviews principal aspects of this approach and the recent developments in the McChasy simulation code. The latter made it possible to distinguish between randomly displaced atoms (RDA) and extended defects (dislocations, loops, etc.). Hence, complex defect structures can be characterized by the relative content of these two components. The next refinement of the code consists of detailed parameterization of dislocations and dislocation loops. Defect profiles for variety of compound crystals (GaN, ZnO, SrTiO3) have been measured and evaluated using the McChasy code. Damage accumulation curves for RDA and extended defects revealed non monotonous defect buildup with some characteristic steps. Transition to each stage is governed by the different driving force. As shown by the complementary high resolution XRD measurements lattice strain plays here the crucial role and can be correlated with the concentration of extended defects.

Formation of americium and europium humate complexes

International Nuclear Information System (INIS)

Minai, Y.; Tominaga, T.; Meguro, Y.

1991-01-01

Binding constants of americium and europium with a humic acid were determined to study if complex formation of trivalent actinide-humates affects dissolved species of the actinides in hydrosphere. The purified humic acid was characterized by means of UV-vis, IR, and pH titration, indicating high carboxylate capacity and low aromaticity. Binding constants of americium and europium humates were determined at pH 4.6 and 6.0 by solvent extraction using 241 Am or 152 Eu as a tracer. The binding constants for americium-humate obtained preliminarily suggest that complexes with humic acid are not negligible in speciation of trivalent actinides in hydrosphere. The obtained binding constants were nearly identical with those determined previously by the same procedures, but with humic acids of different origin and compositions. (author)

Optoelectronic and Defect Properties in Earth Abundant Photovoltaic Materials: First-principle Calculations

Science.gov (United States)

Shi, Tingting

Cu3PSe4 prefer energetically the enargite structure, whereas, other compounds favor the famatinite structure. Among the compounds and structures considered, enargite Cu3PSe4, and famatinite Cu3AsS4, are suitable for single junction solar cell applications due to bandgaps of 1.32 eV and 1.15 eV, respectively. Furthermore, CuSbS2 are also studied by density functional theory and HSE06 hybrid functional. The chalcostibite CuSbS2 has an indirect band gap of 1.85 eV, whereas the chalcogenide Cu3SbS4 has a direct band gap of 0.89 eV. We find that the large difference on band gaps is mainly attributed to the different Sb charge states. We further predict that the Sb charge states will affect the defect physics. Particularly, the Sb lone pair s orbitals in CuSbS 2 have strong influence on the formation energies of Sb-related defects. Lastly, we have studied the atomic structure and electronic properties of aluminum (Al)-related defect complexes in silicon. We find a unique stable complex configuration consisting of an Ali and an oxygen dimer, Ali-2Oi, which introduces deep levels in the band gap of Si. The formation energies of the Ali-2Oi complexes could be lower than that of individual Ali atoms under oxygen-rich conditions. The formation of Ali-2Oi complexes may explain the experimental observation that the coexistence of Al and O results in reduced carrier lifetime in Si wafers.

The role of Frenkel defect diffusion in dynamic annealing in ion-irradiated Si

Energy Technology Data Exchange (ETDEWEB)

Wallace, J. B.; Aji, L. B. Bayu; Martin, A. A.; Shin, S. J.; Shao, L.; Kucheyev, S. O.

2017-01-06

The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of ballistically-generated point defects. The dominant dynamic annealing processes, however, remain unknown even for crystalline Si. Here, we use a pulsed ion beam method to study defect dynamics in Si bombarded in the temperature range from -20 to 140 °C with 500 keV Ar ions. Results reveal a defect relaxation time constant of ~10–0.2 ms, which decreases monotonically with increasing temperature. The dynamic annealing rate shows an Arrhenius dependence with two well-defined activation energies of 73 ± 5 meV and 420 ± 10 meV, below and above 60 °C, respectively. Rate theory modeling, bench-marked against this data, suggests a crucial role of both vacancy and interstitial diffusion, with the dynamic annealing rate limited by the migration and interaction of vacancies.

Subsurface defects structural evolution in nano-cutting of single crystal copper

International Nuclear Information System (INIS)

Wang, Quanlong; Bai, Qingshun; Chen, Jiaxuan; Sun, Yazhou; Guo, Yongbo; Liang, Yingchun

2015-01-01

Highlights: • An innovative analysis method is adopted to analyze nano-cutting process accurately. • A characteristic SFT and stair-rod dislocation are found in subsurface defect layer. • The formation mechanism of stair-rod dislocation is investigated. • The local atomic structure of subsurface defects is introduced. - Abstract: In this work, molecular dynamics simulation is performed to study the subsurface defects structural distribution and its evolution during nano-cutting process of single crystal copper. The formation mechanism of chip and machined surface is interviewed by analyzing the dislocation evolution and atomic migration. The centro-symmetry parameter and spherical harmonics method are adopted to characterize the distribution and evolution of the subsurface defect structures and local atomic structures. The results show that stacking faults, dislocation loops, “V-shaped” dislocation loops, and plenty of point defects are formed during the machined surface being formed in shear-slip zone. In subsurface damage layers, stair-rod dislocation, stacking fault tetrahedra, atomic cluster defect, and vacancy defect are formed. And the formation mechanism of stair-rod dislocation is investigated by atomic-scale structure evolution. The local atomic structures of subsurface defects are icosahedrons, hexagonal close packed, body-centered cubic, and defect face center cubic, and the variations of local atomic structures are investigated

Subsurface defects structural evolution in nano-cutting of single crystal copper

Energy Technology Data Exchange (ETDEWEB)

Wang, Quanlong [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Bai, Qingshun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Chen, Jiaxuan, E-mail: wangquanlong0@hit.edu.cn [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Sun, Yazhou [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China); Guo, Yongbo [Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China); Liang, Yingchun [School of Mechatronics Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2015-07-30

Highlights: • An innovative analysis method is adopted to analyze nano-cutting process accurately. • A characteristic SFT and stair-rod dislocation are found in subsurface defect layer. • The formation mechanism of stair-rod dislocation is investigated. • The local atomic structure of subsurface defects is introduced. - Abstract: In this work, molecular dynamics simulation is performed to study the subsurface defects structural distribution and its evolution during nano-cutting process of single crystal copper. The formation mechanism of chip and machined surface is interviewed by analyzing the dislocation evolution and atomic migration. The centro-symmetry parameter and spherical harmonics method are adopted to characterize the distribution and evolution of the subsurface defect structures and local atomic structures. The results show that stacking faults, dislocation loops, “V-shaped” dislocation loops, and plenty of point defects are formed during the machined surface being formed in shear-slip zone. In subsurface damage layers, stair-rod dislocation, stacking fault tetrahedra, atomic cluster defect, and vacancy defect are formed. And the formation mechanism of stair-rod dislocation is investigated by atomic-scale structure evolution. The local atomic structures of subsurface defects are icosahedrons, hexagonal close packed, body-centered cubic, and defect face center cubic, and the variations of local atomic structures are investigated.

Complex formation between uranyl and various thiosemicarbazide derivatives

International Nuclear Information System (INIS)

Chuguryan, D.G.; Dzyubenko, V.I.

1987-01-01

Complex formation between hexavalent uranium and salicylaldehyde thiosemicarbazone (H 2 L), salicylaldehyde S-methyl-isothiosemicarbazone (H 2 Q), S-methyl-N 1 ,N 4 -bis(salicylidene)isothiosemicarbazide(H 2 Z), and thiosemicarbazidodiacetic acid (H 2 R) has been studied spectrophotometrically in solution. Stability constants for complexes having the composition UO 2 A have been calculated. Solid uranyl derivatives having the composition UO 2 L x 2H 2 O, UO 2 Q x 2H 2 O, UO 2 Z x 2H 2 O, and UO 2 R x 2H 2 O have been obtained. These derivatives were isolated and their IR spectroscopic behavior and thermal properties were investigated

Multi-Level Formation of Complex Software Systems

Directory of Open Access Journals (Sweden)

Hui Li

2016-05-01

Full Text Available We present a multi-level formation model for complex software systems. The previous works extract the software systems to software networks for further studies, but usually investigate the software networks at the class level. In contrast to these works, our treatment of software systems as multi-level networks is more realistic. In particular, the software networks are organized by three levels of granularity, which represents the modularity and hierarchy in the formation process of real-world software systems. More importantly, simulations based on this model have generated more realistic structural properties of software networks, such as power-law, clustering and modularization. On the basis of this model, how the structure of software systems effects software design principles is then explored, and it could be helpful for understanding software evolution and software engineering practices.

Effects of high-dose hydrogen implantation on defect formation and dopant diffusion in silver implanted ZnO crystals

Energy Technology Data Exchange (ETDEWEB)

Yaqoob, Faisal [Department of Physics, State University of New York at Albany, Albany, New York 12222 (United States); Huang, Mengbing, E-mail: mhuang@sunypoly.edu [College of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, New York 12203 (United States)

2016-07-28

This work reports on the effects of a deep high-dose hydrogen ion implant on damage accumulation, defect retention, and silver diffusion in silver implanted ZnO crystals. Single-crystal ZnO samples were implanted with Ag ions in a region ∼150 nm within the surface, and some of these samples were additionally implanted with hydrogen ions to a dose of 2 × 10{sup 16 }cm{sup −2}, close to the depth ∼250 nm. Rutherford backscattering/ion channeling measurements show that crystal damage caused by Ag ion implantation and the amount of defects retained in the near surface region following post-implantation annealing were found to diminish in the case with the H implantation. On the other hand, the additional H ion implantation resulted in a reduction of substitutional Ag atoms upon post-implantation annealing. Furthermore, the presence of H also modified the diffusion properties of Ag atoms in ZnO. We discuss these findings in the context of the effects of nano-cavities on formation and annihilation of point defects as well as on impurity diffusion and trapping in ZnO crystals.

Influence of point defects on the near edge structure of hexagonal boron nitride

Science.gov (United States)

McDougall, Nicholas L.; Partridge, Jim G.; Nicholls, Rebecca J.; Russo, Salvy P.; McCulloch, Dougal G.

2017-10-01

Hexagonal boron nitride (hBN) is a wide-band-gap semiconductor with applications including gate insulation layers in graphene transistors, far-ultraviolet light emitting devices and as hydrogen storage media. Due to its complex microstructure, defects in hBN are challenging to identify. Here, we combine x-ray absorption near edge structure (XANES) spectroscopy with ab initio theoretical modeling to identify energetically favorable defects. Following annealing of hBN samples in vacuum and oxygen, the B and N K edges exhibited angular-dependent peak modifications consistent with in-plane defects. Theoretical calculations showed that the energetically favorable defects all produce signature features in XANES. Comparing these calculations with experiments, the principle defects were attributed to substitutional oxygen at the nitrogen site, substitutional carbon at the boron site, and hydrogen passivated boron vacancies. Hydrogen passivation of defects was found to significantly affect the formation energies, electronic states, and XANES. In the B K edge, multiple peaks above the major 1 s to π* peak occur as a result of these defects and the hydrogen passivated boron vacancy produces the frequently observed doublet in the 1 s to σ* transition. While the N K edge is less sensitive to defects, features attributable to substitutional C at the B site were observed. This defect was also calculated to have mid-gap states in its band structure that may be responsible for the 4.1-eV ultraviolet emission frequently observed from this material.

Shock-induced kelyphite formation in the core of a complex impact crater

Science.gov (United States)

Deseta, Natalie; Boonsue, Suporn; Gibson, Roger L.; Spray, John G.

2017-10-01

We present a compositional and textural analysis of shock-induced microtextures in garnet porphyroblasts in migmatitic garnet-cordierite-biotite paragneisses from the centre of the Vredefort impact structure, South Africa. Detailed imaging and major element analysis of deformation features in, and adjacent to, the garnet porphyroblasts record a complex, heterogeneous distribution of shock effects at the microscale. As the most competent silicate mineral in the assemblage, with the highest Hugoniot Elastic Limit and a wide pressure-temperature stability field, the porphyroblastic garnet preserves a more diverse shock deformation response compared to minerals such as quartz and feldspar, which underwent more comprehensive shock metamorphism and subsequent annealing. The garnet porphyroblasts display pre-impact fractures that are overprinted by later intra-granular Hertzian and distinctive planar fractures associated with the impact event. Shock-induced strain localization occurred along internal slip planes and defects, including pre-existing fractures and inclusion boundaries in the garnet. Symplectitic (kelyphitic) coronas commonly enclose the garnet porphyroblasts, and inhabit intra-granular fractures. The kelyphite assemblage in fractures with open communication beyond garnet grain boundaries is characterized by orthopyroxene—cordierite—sapphirine. Conversely, the kelyphite assemblage in closed-off intra-granular fractures is highly variable, comprising spatially restricted combinations of a secondary garnet phase with a majoritic component, Al-rich orthopyroxene, sapphirine and cordierite. The impedance contrast between garnet porphyroblasts and their inclusions further facilitated the formation of shock-induced features (Al-rich orthopyroxene coronas). Together, the textural and mineralogical data suggest that these features provide a record of oscillatory shock perturbations initiated under confining pressure beneath the transient crater floor. This

THE RESULTS OF THE DEFECT PLACES INVESTIGATION OF DONETSK RAILWAY ROAD BED BY GROUND PENETRATING RADAR COMPLEX

Directory of Open Access Journals (Sweden)

V. D. Petrenko

2014-10-01

Full Text Available Purpose. Defective places definition of road bed at ground penetrating radar is examined. Methodology. For achievement of this goal the experimental research on ground penetrating radar inspection of road bed defective places of the Donetsk Railway, which are caused by a complex of various reasons of geotechnical and constructive character, were conducted. Findings. According to these diagnostic results of road bed on the three districts of the Donetsk Railway is revealed the main causes which lead to the defects appearance, deformities and injuries in it, there is abuse of process parameters and modify its physic mechanical soil properties of natural and technology-related factors. As it is established, the use of ground penetrating radar of series “Losa” on the railways of Ukraine allows searching ballast tank in the body of road bed, defining damp places in soil road bed and foundations, to find arrangement of foreign matter in the soil road bed and work search heterogeneity and places weakening soil. In addition, the use of ground penetrating radar provides rapid detection of defects, deformation and damage of railway track, especially in areas the most dangerous for rolling stock that creates the high level security at the main and auxiliary lines of Ukrzaliznytsia. In conducting the research was justified the high level of reliability and performance with autonomous use of ground penetrating radar. Originality. In modern conditions of defects determination, deformations and damages by traditional methods with application of engineering-geological investigations, it is impossible in connection with their insufficient efficiency. Therefore the using of highly effective methodology of expeditious tool identification of defective places allows reducing significantly the periods of repair of a railway track which is very important for introduction of the high-speed movement on the Ukrainian Railways. Practical value. On the basis of the

Correlation between electron-irradiation defects and applied stress in graphene: A molecular dynamics study

Energy Technology Data Exchange (ETDEWEB)

Kida, Shogo; Yamamoto, Masaya; Kawata, Hiroaki; Hirai, Yoshihiko; Yasuda, Masaaki, E-mail: yasuda@pe.osakafu-u.ac.jp [Department of Physics and Electronics, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Tada, Kazuhiro [Department of Electrical and Control Systems Engineering, National Institute of Technology, Toyama College, Toyama 939-8630 (Japan)

2015-09-15

Molecular dynamics (MD) simulations are performed to study the correlation between electron irradiation defects and applied stress in graphene. The electron irradiation effect is introduced by the binary collision model in the MD simulation. By applying a tensile stress to graphene, the number of adatom-vacancy (AV) and Stone–Wales (SW) defects increase under electron irradiation, while the number of single-vacancy defects is not noticeably affected by the applied stress. Both the activation and formation energies of an AV defect and the activation energy of an SW defect decrease when a tensile stress is applied to graphene. Applying tensile stress also relaxes the compression stress associated with SW defect formation. These effects induced by the applied stress cause the increase in AV and SW defect formation under electron irradiation.

Influence of the Aluminium Alloy Type on Defects Formation in Friction Stir Lap Welding of Thin Sheets

Directory of Open Access Journals (Sweden)

M. I. Costa

Full Text Available Abstract The weldability in Friction Stir Lap Welding (FSLW of heat and non-heat treatable aluminium alloys, the AA6082-T6 and the AA5754-H22 aluminium alloys, respectively, are compared. For both alloys, welds were produced in very thin sheets, using the same welding parameters and procedures, and strong differences in welds morphology were found. The strength of the welds was evaluated by performing tensile-shear tests under monotonic and cyclic loading conditions. As-welded and heat-treated samples of the AA6082- T6 were tested. It was found that the heat-treatable alloy is more sensitive to defects formation, in lap welding, than the non-heat-treatable alloy. The presence of defects has a strong influence on the monotonic and fatigue behaviour of the welds. In spite of this, for very high-applied stresses, the heat-treatable alloy welds perform better in fatigue than the non-heat-treatable alloy welds.

Study of the formation of soluble complexes of sodium caseinate and xanthan in solution.

Science.gov (United States)

Bouhannache, Bouchra; HadjSadok, Abdelkader; Touabet, Abdelkrim

2017-09-01

The main objective of this work was to determinate the optimum conditions for the formation of soluble complexes between sodium caseinate and xanthan in solution at neutral pH, in the presence of the NaCl. The study of the influence of the concentrations of these three substances showed that salt was the most influent factor. It worsens the thermodynamic incompatibility of the two biopolymers in solution, when they are present at large amounts. However, it contributes to soluble complexes formation, when sodium caseinate concentration is below 5.5%. In this case, gels with enhanced rheological properties were obtained. Infrared spectroscopy confirmed that the complexes formation within these gels involves hydrophobic interactions. On the other hand, dynamic light scattering revealed that dilution cause their dissociation. These soluble complexes are promising ingredients to ensure new texturing properties.

Anisotropic bias dependent transport property of defective phosphorene layer

Science.gov (United States)

Umar Farooq, M.; Hashmi, Arqum; Hong, Jisang

2015-01-01

Phosphorene is receiving great research interests because of its peculiar physical properties. Nonetheless, no systematic studies on the transport properties modified due to defects have been performed. Here, we present the electronic band structure, defect formation energy and bias dependent transport property of various defective systems. We found that the defect formation energy is much less than that in graphene. The defect configuration strongly affects the electronic structure. The band gap vanishes in single vacancy layers, but the band gap reappears in divacancy layers. Interestingly, a single vacancy defect behaves like a p-type impurity for transport property. Unlike the common belief, we observe that the vacancy defect can contribute to greatly increasing the current. Along the zigzag direction, the current in the most stable single vacancy structure was significantly increased as compared with that found in the pristine layer. In addition, the current along the armchair direction was always greater than along the zigzag direction and we observed a strong anisotropic current ratio of armchair to zigzag direction. PMID:26198318

Thermophysical spectroscopy of defect states in silicon

International Nuclear Information System (INIS)

Igamberdyev, Kh.T.; Mamadalimov, A.T.; Khabibullaev, P.K.

1989-01-01

The present work deals with analyzing the possibilities of using the non-traditional thermophysical methods to study a defect structure in silicon. For this purpose, the temperature dependences of thermophysical properties of defect silicon are investigated. A number of new, earlier unknown physical phenomena in silicon are obtained, and their interpretation has enabled one to establish the main physical mechanisms of formation of deep defect states in silicon

VV and VO2 defects in silicon studied with hybrid density functional theory

KAUST Repository

Christopoulos, Stavros Richard G

2014-12-07

The formation of VO (A-center), VV and VO2 defects in irradiated Czochralski-grown silicon (Si) is of technological importance. Recent theoretical studies have examined the formation and charge states of the A-center in detail. Here we use density functional theory employing hybrid functionals to analyze the formation of VV and VO2 defects. The formation energy as a function of the Fermi energy is calculated for all possible charge states. For the VV and VO2 defects double negatively charged and neutral states dominate, respectively.

Formation of radiation-induced point defects in silicon doped thin films upon ion implantation and activating annealing

International Nuclear Information System (INIS)

Bublik, V.T.; Shcherbachev, K.D.; Komarnitskaya, E.A.; Parkhomenko, Yu.N.; Vygovskaya, E.A.; Evgen'ev, S.B.

1999-01-01

The formation and relaxation processes for radiation-induced defects in the implantation of 50 keV Si + ions into gallium arsenide and subsequent 10-min annealing in arsine at 850 deg. C have been studied by the triple-crystal X-ray diffractometry and secondary-ion mass spectroscopy techniques. It is shown that the existence of the vacancy-enriched layer stimulating diffusion of introduced dopants into the substrate surface can significantly affect the distribution profile of the dopant in the course of preparation of thin implanted layers

Auto-oscillations of temperature and defect density in impure crystals under irradiation

International Nuclear Information System (INIS)

Selishchev, P.A.; Sugakov, V.I.

1990-01-01

Appearance of auto-oscillations in temperature and defect density of impurity crystals under irradiation is studied. It is shown that at certain critical parameters stationary distribution of temperature and defect density of the sample irradiated becomes unstable as regards the formation of temporal dissipative structures: auto-oscillations of temperature and defect density. Critical parameters are determined (the rate of defect formation, temperature of crystal environment, etc.) and the frequency of appearing auto-oscillations, its dependence on irradiation conditions and crystal properties are found

Omphalocele, exstrophy of bladder, imperforate anus and spinal defect complex with genital anomalies in a late preterm infant

Directory of Open Access Journals (Sweden)

Faisal Othman Al-Qurashi

2017-01-01

Full Text Available Omphalocele, exstrophy of the bladder, imperforate anus and spinal defect (OEIS complex is a rare congenital multisystemic malformation representing unique anomalies. It was first reported in 1978 through a series of cases with an abnormality of body wall development. We are reporting a case of an infant of 36 weeks gestation, with a family history of consanguinity and oral contraceptive pill intake that was discontinued when the mother was 1-month pregnant. The neonatal examination revealed findings that were consistent with OEIS complex along with the presence of genital anomalies. The infant required multi-staged surgical intervention. We conclude that this case report might illustrate some of the possible risk factors and variability of OEIS complex.

High-Frequency Promoter Firing Links THO Complex Function to Heavy Chromatin Formation

DEFF Research Database (Denmark)

Mouaikel, John; Causse, Sébastien Z; Rougemaille, Mathieu

2013-01-01

The THO complex is involved in transcription, genome stability, and messenger ribonucleoprotein (mRNP) formation, but its precise molecular function remains enigmatic. Under heat shock conditions, THO mutants accumulate large protein-DNA complexes that alter the chromatin density of target genes...... (heavy chromatin), defining a specific biochemical facet of THO function and a powerful tool of analysis. Here, we show that heavy chromatin distribution is dictated by gene boundaries and that the gene promoter is necessary and sufficient to convey THO sensitivity in these conditions. Single......-molecule fluorescence insitu hybridization measurements show that heavy chromatin formation correlates with an unusually high firing pace of the promoter with more than 20 transcription events per minute. Heavy chromatin formation closely follows the modulation of promoter firing and strongly correlates with polymerase...

FORMATION AND ELECTROCHEMICAL BEHAVIOUR OF POLYION COMPLEXES FOR ELECTROCHROMIC DISPLAY MATERIAL

Institute of Scientific and Technical Information of China (English)

WAN Guoxiang; WANG Bing; DENG Zhenghua; LUO Chunqiao

1988-01-01

Formation of intermacromolecular complexes containing viologen and electron-transfer reaction occurred on the electrode modified by the complex films were studied. Compositions and morphology of the complexes depend on the properties of polyanion and chemical environment of complexation. The analytical results of cyclic voltammetry (CV) and rotating disk voltammetry(RDV) indicated: (1) active sites of viologen in network of complexes transferred single electron reversibly; (2) the redox peak currents showed excellent symmetry and stability; (3) redox potentials were related to properties of polyanions, varying from -0.4 to -0.6V (vs. SCE). Electrochromic materials with different displaying colors could be obtained by changing the structure of polyviologen.

Electron irradiation-induced defects in {beta}-SiC

Energy Technology Data Exchange (ETDEWEB)

Oshima, Ryuichiro [Osaka Prefectural Univ., Sakai (Japan). Reseach Inst. for Advanced Science and Technology

1996-04-01

To add information of point defects in cubic crystal SiC, polycrystal {beta}-SiC on the market was used as sample and irradiated by neutron and electron. In situ observation of neutron and electron irradiation-induced defects in {beta}-SiC were carried out by ultra high-voltage electronic microscope (UHVEM) and ordinary electronic microscope. The obtained results show that the electron irradiation-induced secondary defects are micro defects less than 20 nm at about 1273K, the density of defects is from 2x10{sup 17} to 1x10{sup 18}/cc, the secondary defects may be hole type at high temperature and the preexistant defects control nuclear formation of irradiation-induced defects, effective sink. (S.Y.)

Infrared studies of the evolution of the C{sub i}O{sub i}(Si{sub I}) defect in irradiated Si upon isothermal anneals

Energy Technology Data Exchange (ETDEWEB)

Angeletos, T.; Londos, C. A., E-mail: hlontos@phys.uoa.gr [University of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84 (Greece); Chroneos, A., E-mail: alexander.chroneos@imperial.ac.uk [Faculty of Engineering, Environment and Computing, Coventry University, Priory Street, Coventry CV1 5FB (United Kingdom); Department of Materials, Imperial College London, London SW7 2AZ (United Kingdom)

2016-03-28

Carbon-oxygen-self-interstitial complexes were investigated in silicon by means of Fourier transform infrared spectroscopy. Upon irradiation, the C{sub i}O{sub i} defect (C{sub 3}) forms which for high doses attract self-interstitials (Si{sub I}s) leading to the formation of the C{sub i}O{sub i}(Si{sub I}) defect (C{sub 4}) with two well-known related bands at 939.6 and 1024 cm{sup −1}. The bands are detectable in the spectra both in room temperature (RT) and liquid helium (LH) temperature. Upon annealing at 150 °C, these bands were transformed to three bands at 725, 952, and 973 cm{sup −1}, detectable only at LH temperatures. Upon annealing at 220 °C, these bands were transformed to three bands at 951, 969.5, and 977 cm{sup −1}, detectable both at RT and LH temperatures. Annealing at 280 °C resulted in the transformation of these bands to two new bands at 973 and 1024 cm{sup −1}. The latter bands disappear from the spectra upon annealing at 315 °C without the emergence of other bands in the spectra. Considering reaction kinetics and defect metastability, we developed a model to describe the experimental results. Annealing at 150 °C triggers the capturing of Si{sub I}s by the C{sub 4} defect leading to the formation of the C{sub i}O{sub i}(Si{sub I}){sub 2} complex. The latter structure appears to be bistable: measuring at LH, the defect is in configuration C{sub i}O{sub i}(Si{sub I}){sub 2} giving rise to the bands at 725, 952, and 973 cm{sup −1}, whereas on measurements at RT, the defect converts to another configuration C{sub i}O{sub i}(Si{sub I}){sub 2}{sup *} without detectable bands in the spectra. Possible structures of the two C{sub i}O{sub i}(Si{sub I}){sub 2} configurations are considered and discussed. Upon annealing at 220 °C, additional Si{sub I}s are captured by the C{sub i}O{sub i}(Si{sub I}){sub 2} defect leading to the formation of the C{sub i}O{sub i}(Si{sub I}){sub 3} complex, which in turn on annealing at

Light-induced defects in hybrid lead halide perovskite

Science.gov (United States)

Sharia, Onise; Schneider, William

One of the main challenges facing organohalide perovskites for solar application is stability. Solar cells must last decades to be economically viable alternatives to traditional energy sources. While some causes of instability can be avoided through engineering, light-induced defects can be fundamentally limiting factor for practical application of the material. Light creates large numbers of electron and hole pairs that can contribute to degradation processes. Using ab initio theoretical methods, we systematically explore first steps of light induced defect formation in methyl ammonium lead iodide, MAPbI3. In particular, we study charged and neutral Frenkel pair formation involving Pb and I atoms. We find that most of the defects, except negatively charged Pb Frenkel pairs, are reversible, and thus most do not lead to degradation. Negative Pb defects create a mid-gap state and localize the conduction band electron. A minimum energy path study shows that, once the first defect is created, Pb atoms migrate relatively fast. The defects have two detrimental effects on the material. First, they create charge traps below the conduction band. Second, they can lead to degradation of the material by forming Pb clusters.

Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level.

Science.gov (United States)

Vines, L; Bhoodoo, C; von Wenckstern, H; Grundmann, M

2017-12-13

The evolution of sheet resistance of n-type In 2 O 3 and Ga 2 O 3 exposed to bombardment with MeV 12 C and 28 Si ions at 35 K is studied in situ. While the sheet resistance of Ga 2 O 3 increased by more than eight orders of magnitude as a result of ion irradiation, In 2 O 3 showed a more complex defect evolution and became more conductive when irradiated at the highest doses. Heating up to room temperature reduced the sheet resistivity somewhat, but Ga 2 O 3 remained highly resistive, while In 2 O 3 showed a lower resistance than as deposited samples. Thermal admittance spectroscopy and deep level transient spectroscopy did not reveal new defect levels for irradiation up to [Formula: see text] cm -2 . A model where larger defect complexes preferentially produce donor like defects in In 2 O 3 is proposed, and may reveal a microscopic view of a charge neutrality level within the conduction band, as previously proposed.

Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level

Science.gov (United States)

Vines, L.; Bhoodoo, C.; von Wenckstern, H.; Grundmann, M.

2018-01-01

The evolution of sheet resistance of n-type In2O3 and Ga2O3 exposed to bombardment with MeV 12C and 28Si ions at 35 K is studied in situ. While the sheet resistance of Ga2O3 increased by more than eight orders of magnitude as a result of ion irradiation, In2O3 showed a more complex defect evolution and became more conductive when irradiated at the highest doses. Heating up to room temperature reduced the sheet resistivity somewhat, but Ga2O3 remained highly resistive, while In2O3 showed a lower resistance than as deposited samples. Thermal admittance spectroscopy and deep level transient spectroscopy did not reveal new defect levels for irradiation up to 2 × 1012 cm-2. A model where larger defect complexes preferentially produce donor like defects in In2O3 is proposed, and may reveal a microscopic view of a charge neutrality level within the conduction band, as previously proposed.

Stabilization and activation of alpha-chymotrypsin in water-organic solvent systems by complex formation with oligoamines.

Science.gov (United States)

Kudryashova, Elena V; Artemova, Tatiana M; Vinogradov, Alexei A; Gladilin, Alexander K; Mozhaev, Vadim V; Levashov, Andrey V

2003-04-01

Formation of enzyme-oligoamine complexes was suggested as an approach to obtain biocatalysts with enhanced resistance towards inactivation in water-organic media. Complex formation results in broadening (by 20-40% v/v ethanol) of the range of cosolvent concentrations where the enzyme retains its catalytic activity (stabilization effect). At moderate cosolvent concentrations (20-40% v/v) complex formation activates the enzyme (by 3-6 times). The magnitude of activation and stabilization effects increases with the number of possible electrostatic contacts between the protein surface and the molecules of oligoamines (OA). Circular dichroism spectra in the far-UV region show that complex formation stabilizes protein conformation and prevents aggregation in water-organic solvent mixtures. Two populations of the complexes with different thermodynamic stabilities were found in alpha-chymotrypsin (CT)-OA systems depending on the CT/OA ratio. The average dissociation constants and stoichiometries of both low- and high-affinity populations of the complexes were estimated. It appears that it is the low-affinity sites on the CT surface that are responsible for the activation effect.

Natural defects and defects created by ionic implantation in zinc tellurium

International Nuclear Information System (INIS)

Roche, J.P.; Dupuy, M.; Pfister, J.C.

1977-01-01

Various defects have been studied in ZnTe crystals by transmission electron microscope and by scanning electron microscope in cathodo-luminescence mode: grain boundaries, sub-grain boundaries, twins. Ionic implants of boron (100 keV - 2x10 14 and 10 15 ions cm -2 ) were made on these crystals followed by isochrone annealing (30 minutes) of zinc under partial pressure at 550, 650 and 750 0 C. The nature of the defects was determined by transmission electron microscope: these are interstitial loops (b=1/3 ) the size of which varies between 20 A (non-annealed sample) and 180A (annealed at 750 0 C). The transmission electron microscope was also used to make concentration profiles of defects depending on depth. It is found that for the same implant (2x10 14 ions.cm -2 ), the defect peak moves towards the exterior of the crystal as the annealing temperature rises (400 - 1000 and 7000 A for the three annealings). These results are explained from a model which allows for the coalescence of defects and considers the surface of the sample as being the principal source of vacancies. During the annealings, the migration of vacancies brings about the gradual annihilation of the implant defects. The adjustment of certain calculation parameters on the computer result in giving 2 eV as energy value for the formation of vacancies [fr

Simulations of photochemical smog formation in complex urban areas

Science.gov (United States)

Muilwijk, C.; Schrijvers, P. J. C.; Wuerz, S.; Kenjereš, S.

2016-12-01

In the present study we numerically investigated the dispersion of photochemical reactive pollutants in complex urban areas by applying an integrated Computational Fluid Dynamics (CFD) and Computational Reaction Dynamics (CRD) approach. To model chemical reactions involved in smog generation, the Generic Reaction Set (GRS) approach is used. The GRS model was selected since it does not require detailed modeling of a large set of reactive components. Smog formation is modeled first in the case of an intensive traffic emission, subjected to low to moderate wind conditions in an idealized two-dimensional street canyon with a building aspect ratio (height/width) of one. It is found that Reactive Organic Components (ROC) play an important role in the chemistry of smog formation. In contrast to the NOx/O3 photochemical steady state model that predicts a depletion of the (ground level) ozone, the GRS model predicts generation of ozone. Secondly, the effect of direct sunlight and shadow within the street canyon on the chemical reaction dynamics is investigated for three characteristic solar angles (morning, midday and afternoon). Large differences of up to one order of magnitude are found in the ozone production for different solar angles. As a proof of concept for real urban areas, the integrated CFD/CRD approach is applied for a real scale (1 × 1 km2) complex urban area (a district of the city of Rotterdam, The Netherlands) with high traffic emissions. The predicted pollutant concentration levels give realistic values that correspond to moderate to heavy smog. It is concluded that the integrated CFD/CRD method with the GRS model of chemical reactions is both accurate and numerically robust, and can be used for modeling of smog formation in complex urban areas.

ILT based defect simulation of inspection images accurately predicts mask defect printability on wafer

Science.gov (United States)

Deep, Prakash; Paninjath, Sankaranarayanan; Pereira, Mark; Buck, Peter

2016-05-01

At advanced technology nodes mask complexity has been increased because of large-scale use of resolution enhancement technologies (RET) which includes Optical Proximity Correction (OPC), Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO). The number of defects detected during inspection of such mask increased drastically and differentiation of critical and non-critical defects are more challenging, complex and time consuming. Because of significant defectivity of EUVL masks and non-availability of actinic inspection, it is important and also challenging to predict the criticality of defects for printability on wafer. This is one of the significant barriers for the adoption of EUVL for semiconductor manufacturing. Techniques to decide criticality of defects from images captured using non actinic inspection images is desired till actinic inspection is not available. High resolution inspection of photomask images detects many defects which are used for process and mask qualification. Repairing all defects is not practical and probably not required, however it's imperative to know which defects are severe enough to impact wafer before repair. Additionally, wafer printability check is always desired after repairing a defect. AIMSTM review is the industry standard for this, however doing AIMSTM review for all defects is expensive and very time consuming. Fast, accurate and an economical mechanism is desired which can predict defect printability on wafer accurately and quickly from images captured using high resolution inspection machine. Predicting defect printability from such images is challenging due to the fact that the high resolution images do not correlate with actual mask contours. The challenge is increased due to use of different optical condition during inspection other than actual scanner condition, and defects found in such images do not have correlation with actual impact on wafer. Our automated defect simulation tool predicts

Study of irradiation induced defects in silicon

International Nuclear Information System (INIS)

Pal, Gayatri; Sebastian, K.C.; Somayajulu, D.R.S.; Chintalapudi, S.N.

2000-01-01

Pure high resistivity (6000 ohm-cm) silicon wafers were recoil implanted with 1.8 MeV 111 In ions. As-irradiated wafers showed a 13 MHz quadrupole interaction frequency, which was not observed earlier. The annealing behaviour of these defects in the implanted wafers was studied between room temperature and 1073 K. At different annealing temperatures two more interaction frequencies corresponding to defect complexes D2 and D3 are observed. Even though the experimental conditions were different, these are identical to the earlier reported ones. Based on an empirical point charge model calculation, an attempt is made to identify the configuration of these defect complexes. (author)

Efficiently engineered cell sheet using a complex of polyethylenimine–alginate nanocomposites plus bone morphogenetic protein 2 gene to promote new bone formation

Science.gov (United States)

Jin, Han; Zhang, Kai; Qiao, Chunyan; Yuan, Anliang; Li, Daowei; Zhao, Liang; Shi, Ce; Xu, Xiaowei; Ni, Shilei; Zheng, Changyu; Liu, Xiaohua; Yang, Bai; Sun, Hongchen

2014-01-01

Regeneration of large bone defects is a common clinical problem. Recently, stem cell sheet has been an emerging strategy in bone tissue engineering. To enhance the osteogenic potential of stem cell sheet, we fabricated bone morphogenetic protein 2 (BMP-2) gene-engineered cell sheet using a complex of polyethylenimine–alginate (PEI–al) nanocomposites plus human BMP-2 complementary(c)DNA plasmid, and studied its osteogenesis in vitro and in vivo. PEI–al nanocomposites carrying BMP-2 gene could efficiently transfect bone marrow mesenchymal stem cells. The cell sheet was made by culturing the cells in medium containing vitamin C for 10 days. Assays on the cell culture showed that the genetically engineered cells released the BMP-2 for at least 14 days. The expression of osteogenesis-related gene was increased, which demonstrated that released BMP-2 could effectively induce the cell sheet osteogenic differentiation in vitro. To further test the osteogenic potential of the cell sheet in vivo, enhanced green fluorescent protein or BMP-2-producing cell sheets were treated on the cranial bone defects. The results indicated that the BMP-2-producing cell sheet group was more efficient than other groups in promoting bone formation in the defect area. Our results suggested that PEI–al nanocomposites efficiently deliver the BMP-2 gene to bone marrow mesenchymal stem cells and that BMP-2 gene-engineered cell sheet is an effective way for promoting bone regeneration. PMID:24855355

Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

CERN Document Server

Seebauer, Edmund G

2009-01-01

The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

Defects in electron irradiated vitreous SiO[sub 2] probed by positron annihiliation

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Tanigawa, Shoichiro (Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science); Kawano, Takao (Tsukuba Univ., Ibaraki (Japan). Radioisotope Centre); Itoh, Hisayoshi (Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment)

1994-10-10

Defects in 3 MeV electron irradiated vitreous SiO[sub 2] (v-SiO[sub 2]) were probed by the positron annihilation technique. For unirradiated v-SiO[sub 2] specimens, almost all positrons were found to annihilate from positronium (Ps) states. This high formation probability of Ps was attributed to the trapping of positrons by open-space defects. The formation probability of Ps was decreased by the electron irradiation. The observed inhibition of the Ps formation was attributed to the trapping of positrons by point defects introduced and/or activated by the irradiation. From measurements of the lifetime distribution of Ps, it was found that, by the electron irradiation, the mean size of open-space defects was decreased and the size distribution of such defects was broadened. (Author).

Control of cell fate by the formation of an architecturally complex bacterial community.

Science.gov (United States)

Vlamakis, Hera; Aguilar, Claudio; Losick, Richard; Kolter, Roberto

2008-04-01

Bacteria form architecturally complex communities known as biofilms in which cells are held together by an extracellular matrix. Biofilms harbor multiple cell types, and it has been proposed that within biofilms individual cells follow different developmental pathways, resulting in heterogeneous populations. Here we demonstrate cellular differentiation within biofilms of the spore-forming bacterium Bacillus subtilis, and present evidence that formation of the biofilm governs differentiation. We show that motile, matrix-producing, and sporulating cells localize to distinct regions within the biofilm, and that the localization and percentage of each cell type is dynamic throughout development of the community. Importantly, mutants that do not produce extracellular matrix form unstructured biofilms that are deficient in sporulation. We propose that sporulation is a culminating feature of biofilm formation, and that spore formation is coupled to the formation of an architecturally complex community of cells.

Study of new complexes of uranium and comba radical. I.- Complexes defective in sodium carbonate; Estudio de nuevos complejos entre el uranio y el radical CDMBA. I. Complejos con defectos de carbonato sodico

Energy Technology Data Exchange (ETDEWEB)

Vera Palomino, J; Galiano Sedano, J A; Parellada Bellod, R; Bellido Gonzalez, A

1975-07-01

Some complexes formed in presence of defect of sodium carbonate with respect to the stoichiometric ratio (U): (C0{sub 3}) = 1:3 are studied. This ratio corresponds to the main complex which is responsible for the uranium extraction with CDMBAC organic solutions and from U(VI) aqueous solutions with an excess of sodium carbonate. (Author) 10 refs.

Enhanced photoluminescence from single nitrogen-vacancy defects in nanodiamonds coated with phenol-ionic complexes.

Science.gov (United States)

Bray, Kerem; Previdi, Rodolfo; Gibson, Brant C; Shimoni, Olga; Aharonovich, Igor

2015-03-21

Fluorescent nanodiamonds are attracting major attention in the field of bio-sensing and bio-labeling. In this work we demonstrate a robust approach to achieve an encapsulation of individual nanodiamonds with phenol-ionic complexes that enhance the photoluminescence from single nitrogen vacancy (NV) centers. We show that single NV centres in the coated nanodiamonds also exhibit shorter lifetimes, opening another channel for high resolution sensing. We propose that the nanodiamond encapsulation reduces the non-radiative decay pathways of the NV color centers. Our results provide a versatile and assessable way to enhance photoluminescence from nanodiamond defects that can be used in a variety of sensing and imaging applications.

DNA Repair Defects and Chromosomal Aberrations

Science.gov (United States)

Hada, Megumi; George, K. A.; Huff, J. L.; Pluth, J. M.; Cucinotta, F. A.

2009-01-01

Yields of chromosome aberrations were assessed in cells deficient in DNA doublestrand break (DSB) repair, after exposure to acute or to low-dose-rate (0.018 Gy/hr) gamma rays or acute high LET iron nuclei. We studied several cell lines including fibroblasts deficient in ATM (ataxia telangiectasia mutated; product of the gene that is mutated in ataxia telangiectasia patients) or NBS (nibrin; product of the gene mutated in the Nijmegen breakage syndrome), and gliomablastoma cells that are proficient or lacking in DNA-dependent protein kinase (DNA-PK) activity. Chromosomes were analyzed using the fluorescence in situ hybridization (FISH) chromosome painting method in cells at the first division post irradiation, and chromosome aberrations were identified as either simple exchanges (translocations and dicentrics) or complex exchanges (involving >2 breaks in 2 or more chromosomes). Gamma irradiation induced greater yields of both simple and complex exchanges in the DSB repair-defective cells than in the normal cells. The quadratic dose-response terms for both simple and complex chromosome exchanges were significantly higher for the ATM- and NBS-deficient lines than for normal fibroblasts. However, in the NBS cells the linear dose-response term was significantly higher only for simple exchanges. The large increases in the quadratic dose-response terms in these repair-defective cell lines points the importance of the functions of ATM and NBS in chromatin modifications to facilitate correct DSB repair and minimize the formation of aberrations. The differences found between ATM- and NBS-deficient cells at low doses suggest that important questions should with regard to applying observations of radiation sensitivity at high dose to low-dose exposures. For aberrations induced by iron nuclei, regression models preferred purely linear dose responses for simple exchanges and quadratic dose responses for complex exchanges. Relative biological effectiveness (RBE) factors of all of

Defect production and formation of helium-vacancy clusters due to cascades in α-iron

International Nuclear Information System (INIS)

Yang, L.; Zu, X.T.; Xiao, H.Y.; Gao, F.; Heinisch, H.L.; Kurtz, R.J.

2007-01-01

Displacement cascades are simulated by molecular dynamics methods in α-Fe containing different concentrations of substitutional He atoms. Primary knock-on atom (PKA) energies, E p , from 0.5 to 5 keV are considered at the irradiation temperature of 100 K. The concentration of He in Fe varies from 1 to 5 at%, and the results are compared with the simulations performed in pure α-Fe. We find that the total number of point defects increases with increasing He concentration. The present studies reveal the formation and the configurations of He-vacancy clusters in the cascades of α-Fe. Furthermore, the production efficiency of He-vacancy clusters increases with increasing He concentration and PKA energy. The nucleation mechanisms of He-vacancy clusters in displacement cascades are discussed in detail

Topological defect formation in rotating binary dipolar Bose–Einstein condensate

International Nuclear Information System (INIS)

Zhang, Xiao-Fei; Han, Wei; Jiang, Hai-Feng; Liu, Wu-Ming; Saito, Hiroki; Zhang, Shou-Gang

2016-01-01

We investigate the topological defects and spin structures of a rotating binary Bose–Einstein condensate, which consists of both dipolar and scalar bosonic atoms confined in spin-dependent optical lattices, for an arbitrary orientation of the dipoles with respect to their plane of motion. Our results show that the tunable dipolar interaction, especially the orientation of the dipoles, can be used to control the direction of stripe phase and its related half-vortex sheets. In addition, it can also be used to obtain a regular arrangement of various topological spin textures, such as meron, circular and cross disgyration spin structures. We point out that such topological defects and regular arrangement of spin structures arise primarily from the long-range and anisotropic nature of dipolar interaction and its competition with the spin-dependent optical lattices and rotation. - Highlights: • Effects of both strength and orientation of the dipoles are discussed. • Various topological defects can be formed in different parameter regions. • Present one possible way to obtain regular arrangements of spin textures.

A study on density functional theory of the effect of pressure on the formation and migration enthalpies of intrinsic point defects in growing single crystal Si

Science.gov (United States)

Sueoka, Koji; Kamiyama, Eiji; Kariyazaki, Hiroaki

2012-05-01

In 1982, Voronkov presented a model describing point defect behavior during the growth of single crystal Si from a melt and derived an expression to predict if the crystal was vacancy- or self-interstitial-rich. Recently, Vanhellemont claimed that one should take into account the impact of compressive stress introduced by the thermal gradient at the melt/solid interface by considering the hydrostatic pressure dependence of the formation enthalpy of the intrinsic point defects. To evaluate the impact of thermal stress more correctly, the pressure dependence of both the formation enthalpy (Hf) and the migration enthalpy (Hm) of the intrinsic point defects should be taken into account. Furthermore, growing single crystal Si is not under hydrostatic pressure but almost free of external pressure (generally in Ar gas under reduced pressure). In the present paper, the dependence of Hf and Hm on the pressure P, or in other words, the pressure dependence of the formation energy (Ef) and the relaxation volume (vf), is quantified by density functional theory calculations. Although a large number of ab initio calculations of the properties of intrinsic point defects have been published during the last years, calculations for Si crystals under pressure are rather scarce. For vacancies V, the reported pressure dependences of HfV are inconsistent. In the present study, by using 216-atom supercells with a sufficient cut-off energy and mesh of k-points, the neutral I and V are found to have nearly constant formation energies EfI and EfV for pressures up to 1 GPa. For the relaxation volume, vfI is almost constant while vfV decreases linearly with increasing pressure P. In case of the hydrostatic pressure Ph, the calculated formation enthalpy HfI and migration enthalpy HmI at the [110] dumbbell site are given by HfI = 3.425 - 0.057 × Ph (eV) and HmI = 0.981 - 0.039 × Ph (eV), respectively, with Ph given in GPa. The calculated HfV and HmV dependencies on Ph given by HfV = 3.543 - 0

Defect formation by pristine indenter at the initial stage of nanoindentation

International Nuclear Information System (INIS)

Chen, I-Hsien; Hsiao, Chun-I; Behera, Rakesh K.; Hsu, Wen-Dung

2013-01-01

Nano-indentation is a sophisticated method to characterize mechanical properties of materials. This method samples a very small amount of material during each indentation. Therefore, this method is extremely useful to measure mechanical properties of nano-materials. The measurements using nanoindentation is very sensitive to the surface topology of the indenter and the indenting surfaces. The mechanisms involved in the entire process of nanoindentation require an atomic level understanding of the interplay between the indenter and the substrate. In this paper, we have used atomistic simulation methods with empirical potentials to investigate the effect of various types of pristine indenter on the defect nucleation and growth. Using molecular dynamics simulations, we have predicted the load-depth curve for conical, vickers, and sperical tip. The results are analyzed based on the coherency between the indenter tip and substrate surface for a fixed depth of 20 Å. The depth of defect nucleation and growth is observed to be dependent on the tip geometry. A tip with larger apex angle nucleates defects at a shallower depth. However, the type of defect generated is dependent on the crystalline orientation of the tip and substrate. For coherent systems, prismatic loops were generated, which released into the substrate along the close-packed directions with continued indentation. For incoherent systems, pyramidal shaped dislocation junctions formed in the FCC systems and disordered atomic clusters formed in the BCC systems. These defect nucleation and growth process provide the atomistic mechanisms responsible for the observed load-depth response during nanoindentation

Deficiency of PHB complex impairs respiratory supercomplex formation and activates mitochondrial flashes.

Science.gov (United States)

Jian, Chongshu; Xu, Fengli; Hou, Tingting; Sun, Tao; Li, Jinghang; Cheng, Heping; Wang, Xianhua

2017-08-01

Prohibitins (PHBs; prohibitin 1, PHB1 or PHB, and prohibitin 2, PHB2) are evolutionarily conserved and ubiquitously expressed mitochondrial proteins. PHBs form multimeric ring complexes acting as scaffolds in the inner mitochondrial membrane. Mitochondrial flashes (mitoflashes) are newly discovered mitochondrial signaling events that reflect electrical and chemical excitations of the organelle. Here, we investigate the possible roles of PHBs in the regulation of mitoflash signaling. Downregulation of PHBs increases mitoflash frequency by up to 5.4-fold due to elevated basal reactive oxygen species (ROS) production in the mitochondria. Mechanistically, PHB deficiency impairs the formation of mitochondrial respiratory supercomplexes (RSCs) without altering the abundance of individual respiratory complex subunits. These impairments induced by PHB deficiency are effectively rescued by co-expression of PHB1 and PHB2, indicating that the multimeric PHB complex acts as the functional unit. Furthermore, downregulating other RSC assembly factors, including SCAFI (also known as COX7A2L), RCF1a (HIGD1A), RCF1b (HIGD2A), UQCC3 and SLP2 (STOML2), all activate mitoflashes through elevating mitochondrial ROS production. Our findings identify the PHB complex as a new regulator of RSC formation and mitoflash signaling, and delineate a general relationship among RSC formation, basal ROS production and mitoflash biogenesis. © 2017. Published by The Company of Biologists Ltd.

Two mechanisms of crater formation in ultraviolet-pulsed-laser irradiated SiO2 thin films with artificial defects

International Nuclear Information System (INIS)

Papernov, S.; Schmid, A.W.

2005-01-01

Atomic force microscopy was employed to investigate the morphology of ultraviolet nanosecond-pulsed-laser damage in SiO 2 thin films. Gold nanoparticles, 18.5-nm diameter, embedded in the film were used as calibrated absorbing defects. Damage-crater diameter, depth, and cross-sectional profiles were measured as a function of laser fluence and the lodging depth of gold nanoparticles. The results indicate that, at laser fluences close to the crater-formation threshold and for lodging depths of a few particle diameters, the dominating regime of the material removal is melting and evaporation. The morphology of craters initiated by deep absorbing defects, with a lodging depth larger than ∼10 particle diameters, clearly points to a two-stage material-removal mechanism. The process starts with the material melting within the narrow channel volume and, upon temperature and pressure buildup, film fracture takes place. Crater-diameter variation with lodging depth and laser fluence is compared with theoretical predictions

FORMATION AND RECONDENSATION OF COMPLEX ORGANIC MOLECULES DURING PROTOSTELLAR LUMINOSITY OUTBURSTS

International Nuclear Information System (INIS)

Taquet, Vianney; Wirström, Eva S.; Charnley, Steven B.

2016-01-01

During the formation of stars, the accretion of surrounding material toward the central object is thought to undergo strong luminosity outbursts followed by long periods of relative quiescence, even at the early stages of star formation when the protostar is still embedded in a large envelope. We investigated the gas-phase formation and recondensation of the complex organic molecules (COMs) di-methyl ether and methyl formate, induced by sudden ice evaporation processes occurring during luminosity outbursts of different amplitudes in protostellar envelopes. For this purpose, we updated a gas-phase chemical network forming COMs in which ammonia plays a key role. The model calculations presented here demonstrate that ion–molecule reactions alone could account for the observed presence of di-methyl ether and methyl formate in a large fraction of protostellar cores without recourse to grain-surface chemistry, although they depend on uncertain ice abundances and gas-phase reaction branching ratios. In spite of the short outburst timescales of about 100 years, abundance ratios of the considered species higher than 10% with respect to methanol are predicted during outbursts due to their low binding energies relative to water and methanol which delay their recondensation during cooling. Although the current luminosity of most embedded protostars would be too low to produce complex organics in the hot-core regions that are observable with current sub-millimetric interferometers, previous luminosity outburst events would induce the formation of COMs in extended regions of protostellar envelopes with sizes increasing by up to one order of magnitude

Formation and Recondensation of Complex Organic Molecules during Protostellar Luminosity Outbursts

Science.gov (United States)

Taquet, Vianney; Wirström, Eva S.; Charnley, Steven B.

2016-04-01

During the formation of stars, the accretion of surrounding material toward the central object is thought to undergo strong luminosity outbursts followed by long periods of relative quiescence, even at the early stages of star formation when the protostar is still embedded in a large envelope. We investigated the gas-phase formation and recondensation of the complex organic molecules (COMs) di-methyl ether and methyl formate, induced by sudden ice evaporation processes occurring during luminosity outbursts of different amplitudes in protostellar envelopes. For this purpose, we updated a gas-phase chemical network forming COMs in which ammonia plays a key role. The model calculations presented here demonstrate that ion-molecule reactions alone could account for the observed presence of di-methyl ether and methyl formate in a large fraction of protostellar cores without recourse to grain-surface chemistry, although they depend on uncertain ice abundances and gas-phase reaction branching ratios. In spite of the short outburst timescales of about 100 years, abundance ratios of the considered species higher than 10% with respect to methanol are predicted during outbursts due to their low binding energies relative to water and methanol which delay their recondensation during cooling. Although the current luminosity of most embedded protostars would be too low to produce complex organics in the hot-core regions that are observable with current sub-millimetric interferometers, previous luminosity outburst events would induce the formation of COMs in extended regions of protostellar envelopes with sizes increasing by up to one order of magnitude.

FORMATION AND RECONDENSATION OF COMPLEX ORGANIC MOLECULES DURING PROTOSTELLAR LUMINOSITY OUTBURSTS

Energy Technology Data Exchange (ETDEWEB)

Taquet, Vianney [Leiden Observatory, Leiden University, P.O. Box 9513, 2300-RA Leiden (Netherlands); Wirström, Eva S. [Department of Earth and Space Sciences, Chalmers University of Technology, Onsala Space Observatory, SE-439 92 Onsala (Sweden); Charnley, Steven B. [Astrochemistry Laboratory and The Goddard Center for Astrobiology, Mailstop 691, NASA Goddard Space Flight Center, 8800 Greenbelt Road, Greenbelt, MD 20770 (United States)

2016-04-10

During the formation of stars, the accretion of surrounding material toward the central object is thought to undergo strong luminosity outbursts followed by long periods of relative quiescence, even at the early stages of star formation when the protostar is still embedded in a large envelope. We investigated the gas-phase formation and recondensation of the complex organic molecules (COMs) di-methyl ether and methyl formate, induced by sudden ice evaporation processes occurring during luminosity outbursts of different amplitudes in protostellar envelopes. For this purpose, we updated a gas-phase chemical network forming COMs in which ammonia plays a key role. The model calculations presented here demonstrate that ion–molecule reactions alone could account for the observed presence of di-methyl ether and methyl formate in a large fraction of protostellar cores without recourse to grain-surface chemistry, although they depend on uncertain ice abundances and gas-phase reaction branching ratios. In spite of the short outburst timescales of about 100 years, abundance ratios of the considered species higher than 10% with respect to methanol are predicted during outbursts due to their low binding energies relative to water and methanol which delay their recondensation during cooling. Although the current luminosity of most embedded protostars would be too low to produce complex organics in the hot-core regions that are observable with current sub-millimetric interferometers, previous luminosity outburst events would induce the formation of COMs in extended regions of protostellar envelopes with sizes increasing by up to one order of magnitude.

An optimization method for defects reduction in fiber laser keyhole welding

Science.gov (United States)

Ai, Yuewei; Jiang, Ping; Shao, Xinyu; Wang, Chunming; Li, Peigen; Mi, Gaoyang; Liu, Yang; Liu, Wei

2016-01-01

Laser welding has been widely used in automotive, power, chemical, nuclear and aerospace industries. The quality of welded joints is closely related to the existing defects which are primarily determined by the welding process parameters. This paper proposes a defects optimization method that takes the formation mechanism of welding defects and weld geometric features into consideration. The analysis of welding defects formation mechanism aims to investigate the relationship between welding defects and process parameters, and weld features are considered to identify the optimal process parameters for the desired welded joints with minimum defects. The improved back-propagation neural network possessing good modeling for nonlinear problems is adopted to establish the mathematical model and the obtained model is solved by genetic algorithm. The proposed method is validated by macroweld profile, microstructure and microhardness in the confirmation tests. The results show that the proposed method is effective at reducing welding defects and obtaining high-quality joints for fiber laser keyhole welding in practical production.

Atomistic simulation of the point defects in TaW ordered alloy

Indian Academy of Sciences (India)

atom method (MAEAM), the formation, migration and activation energies of the point defects for six-kind migration mechanisms in B2-type TaW alloy have been investigated. The results showed that the anti-site defects TaW and WTa were easier to form than Ta and W vacancies owing to their lower formation energies.

The role of defects in laser damage of multilayer coatings

International Nuclear Information System (INIS)

Kozlowski, M.R.; Chow, R.

1993-01-01

Laser induced damage to optical coatings is generally a localized phenomenon associated with coating defects. The most common of the defect types are the well-known nodule defect. This paper reviews the use of experiments and modeling to understand the formation of these defects and their interaction with laser light. Of particular interest are efforts to identify which defects are most susceptible to laser damage. Also discussed are possible methods for stabilizing these defects (laser conditioning) or preventing their initiation (source stabilization, spatter particle trapping)

Topological Defects in a Living Nematic Ensnare Swimming Bacteria

Science.gov (United States)

Genkin, Mikhail M.; Sokolov, Andrey; Lavrentovich, Oleg D.; Aranson, Igor S.

2017-01-01

Active matter exemplified by suspensions of motile bacteria or synthetic self-propelled particles exhibits a remarkable propensity to self-organization and collective motion. The local input of energy and simple particle interactions often lead to complex emergent behavior manifested by the formation of macroscopic vortices and coherent structures with long-range order. A realization of an active system has been conceived by combining swimming bacteria and a lyotropic liquid crystal. Here, by coupling the well-established and validated model of nematic liquid crystals with the bacterial dynamics, we develop a computational model describing intricate properties of such a living nematic. In faithful agreement with the experiment, the model reproduces the onset of periodic undulation of the director and consequent proliferation of topological defects with the increase in bacterial concentration. It yields a testable prediction on the accumulation of bacteria in the cores of +1 /2 topological defects and depletion of bacteria in the cores of -1 /2 defects. Our dedicated experiment on motile bacteria suspended in a freestanding liquid crystalline film fully confirms this prediction. Our findings suggest novel approaches for trapping and transport of bacteria and synthetic swimmers in anisotropic liquids and extend a scope of tools to control and manipulate microscopic objects in active matter.

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

International Nuclear Information System (INIS)

Chroneos, A.; Londos, C. A.; Sgourou, E. N.

2011-01-01

Experimental and theoretical techniques are used to investigate the impact of tin doping on the formation and the thermal stability of oxygen- and carbon-related defects in electron-irradiated Czochralski silicon. The results verify previous reports that Sn doping reduces the formation of the VO defect and suppresses its conversion to the VO 2 defect. Within experimental accuracy, a small delay in the growth of the VO 2 defect is observed. Regarding carbon-related defects, it is determined that Sn doping leads to a reduction in the formation of the C i O i , C i C s , and C i O i (Si I ) defects although an increase in their thermal stability is observed. The impact of strain induced in the lattice by the larger tin substitutional atoms, as well as their association with intrinsic defects and carbon impurities, can be considered as an explanation to account for the above observations. The density functional theory calculations are used to study the interaction of tin with lattice vacancies and oxygen- and carbon-related clusters. Both experimental and theoretical results demonstrate that tin co-doping is an efficient defect engineering strategy to suppress detrimental effects because of the presence of oxygen- and carbon-related defect clusters in devices.

Secondary defects in non-metallic solids

International Nuclear Information System (INIS)

Ashbee, K.H.G.; Hobbs, L.W.

1977-01-01

This paper points out features of secondary defect formation which are peculiar to non-metallic solids (excluding elemental semiconductors). Most of the materials of interest are compounds of two or more (usually more or less ionic) atomic species, and immediate consequence of which is a need to maintain both stoichiometry (or accommodate non-stoichiometry) and order. Primary defects in these solids, whether produced thermally, chemically or by irradiation, seldom are present or aggregate in exactly stoichiometric proportions, and the resulting extending defect structures can be quite distinct from those found in metallic solids. Where stoichiometry is maintained, it is often convenient to describe extended defects in terms of alterations in the arrangement of 'molecular' units. The adoption of this procedure enables several novel features of extended defect structures in non-metals to be explained. There are several ways in which a range of non-stoichiometry can be accommodated, which include structural elimination of point defects, nucleation of new coherent phases of altered stoichiometry, and decomposition. (author)

Point defects and atomic transport in crystals

International Nuclear Information System (INIS)

Lidiard, A.B.

1981-02-01

There are two principle aspects to the theory of atomic transport in crystals as caused by the action of point defects, namely (1) the calculation of relevant properties of the point defects (energies and other thermodynamic characteristics of the different possible defects, activation energies and other mobility parameters) and (2) the statistical mechanics of assemblies of defects, both equilibrium and non-equilibrium assemblies. In the five lectures given here both these aspects are touched on. The first two lectures are concerned with the calculation of relevant point defect properties, particularly in ionic crystals. The first lecture is more general, the second is concerned particularly with some recent calculations of the free volumes of formation of defects in various ionic solids; these solve a rather long-standing problem in this area. The remaining three lectures are concerned with the kinetic theory of defects mainly in relaxation, drift and diffusion situations

Ion-irradiation-induced defects in bundles of carbon nanotubes

International Nuclear Information System (INIS)

Salonen, E.; Krasheninnikov, A.V.; Nordlund, K.

2002-01-01

We study the structure and formation yields of atomic-scale defects produced by low-dose Ar ion irradiation in bundles of single-wall carbon nanotubes. For this, we employ empirical potential molecular dynamics and simulate ion impact events over an energy range of 100-1000 eV. We show that the most common defects produced at all energies are vacancies on nanotube walls, which at low temperatures are metastable but long-lived defects. We further calculate the spatial distribution of the defects, which proved to be highly non-uniform. We also show that ion irradiation gives rise to the formations of inter-tube covalent bonds mediated by carbon recoils and nanotube lattice distortions due to dangling bond saturation. The number of inter-tube links, as well as the overall damage, linearly grows with the energy of incident ions

Complexometric determination: Part I - EDTA and complex formation with the Cu2+ ion

Directory of Open Access Journals (Sweden)

Rajković Miloš B.

2002-01-01

Full Text Available Compounds forming very stable complexes - chelates, have a wide field of application in analytical chemistry. The most famous group of these compounds are complexons. Complexons represent organic polyaminocarbonic acids as for example ethylenediaminetetraacetic acid (EDTA and its salts. The EDTA molecule has six coordinative sites. It is a hexadentate ligands i.e. it has two binding nitrogen atoms and four oxygen atoms from carboxyl groups and it forms complexes with almost all metal ions. EDTA as a tetraprotonic acid, H4Y disociates through four steps, yielding the ions HsY-, H2Y2-, HY3- and Y4-. Which of the EDTA forms will be encountered in a solution, depends on the pH. Due to the poor solubility of EDTA in pure water, as well as in most organic solvents, the disodium salt of EDTA Na2H2Y-2H2O, under the commercial name complexon III, is utilized for analytical determinations. In water, EDTA forms soluble, stabile chelate complexes with all cations, at the molar ratio 1:1, regardless of the charge of the metal ion. In contrast to other equilibria, which are mainly defined by Le Chatellier's principle, equilibria related to metal-EDTA complex formation are also dependent on the influence of the secondary equilibria of EDTA complex formation. Complexing reactions, which are equilibrium reactions, are simultaneously influenced by the following factors: solution pH and the presence of complexing agents which may also form a stabile complex with metal ions. The secondary reaction influence may be viewed and monitored through conditional stability constants. In the first part of the paper, the reaction of the formation of the Cu2+-ion complex with EDTA is analyzed beginning from the main reaction through various influences of secondary reactions on the complex Cu2+-EDTA: pH effect, complexation effect and hydrolysis effect. The equations are given for conditional stability constants, which include equilibrium reactions under actual conditions.

Formation of defects at high temperature plastic deformation of gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Mikhnovich, V.V.

2006-03-14

The purpose of the present thesis consists in acquiring more concrete information concerning the mechanism of the movement of dislocations and types of defects that appear during the process of dislocation motion on the basis of systematic experimental studies of the GaAs deformation. Experimental studies concerning the dependence of the stress of the samples from their deformation at different values of the deformation parameters (like temperature and deformation speed) were conducted in this paper. To determine the concentration of defects introduced in samples during the deformation process the positron annihilation spectroscopy (PAS) method was used. The second chapter of this paper deals with models of movement of dislocations and origination of defects during deformation of the samples. In the third chapter channels and models of positron annihilation in the GaAs samples are investigated. In the forth chapter the used experimental methods, preparation procedure of test samples and technical data of conducted experiments are described. The fifth chapter shows the results of deformation experiments. The sixth chapter shows the results of positron lifetime measurements by the PAS method. In the seventh chapter one can find analyses of the values of defects concentration that were introduced in samples during deformation. (orig.)

The influence of atomic number on the complex formation constants by visible spectrophotometric method

International Nuclear Information System (INIS)

Samin; Kris-Tri-Basuki; Farida-Ernawati

1996-01-01

The influence of atomic number on the complex formation constants and it's application by visible spectrophotometric method has been carried out. The complex compound have been made of Y, Nd, Sm and Gd with alizarin red sulfonic in the mole fraction range of 0.20 - 0.53 and pH range of 3.5 - 5. The optimum condition of complex formation was found in the mole fraction range of 0.30 - 0.53, range of pH 3.75 - 5, and the total concentration was 0.00030 M. It was found that the formation constant (β) of alizarin red S. complex by continued variation and matrix disintegration techniques were β : (7.00 ± 0.64).10 9 of complex 3 9γ,β : (4.09±0.34).10 8 of 6 0Nd, β : (7.26 ± 0.42).10 8 of 62 S m and β : (8.38 ± 0.70).10 8 of 64 G d. It can be concluded that the atomic number of Nd is bigger than Sm which is bigger than Gd. The atomic number of Y is the smallest. (39) and the complex formation constant is a biggest. The complex compound can be used for sample analysis with limit detection of Y : 2.2 .10 -5 M, Nd : 2.9 .10 -5 M, Sm : 2.6 .10 -5 M and Gd : 2.4 .10 -5 M. The sensitivity of analysis are Y>Gd>Sm>Nd. The Y 2 O 3 sample of product result from xenotime sand contains Y 2 O 3 : 98.96 ± 1.40 % and in the filtrate (product of monazite sand) contains Nd : 0.27 ± 0.002 M

A tungsten-rhenium interatomic potential for point defect studies

Science.gov (United States)

Setyawan, Wahyu; Gao, Ning; Kurtz, Richard J.

2018-05-01

A tungsten-rhenium (W-Re) classical interatomic potential is developed within the embedded atom method interaction framework. A force-matching method is employed to fit the potential to ab initio forces, energies, and stresses. Simulated annealing is combined with the conjugate gradient technique to search for an optimum potential from over 1000 initial trial sets. The potential is designed for studying point defects in W-Re systems. It gives good predictions of the formation energies of Re defects in W and the binding energies of W self-interstitial clusters with Re. The potential is further evaluated for describing the formation energy of structures in the σ and χ intermetallic phases. The predicted convex-hulls of formation energy are in excellent agreement with ab initio data. In pure Re, the potential can reproduce the formation energies of vacancies and self-interstitial defects sufficiently accurately and gives the correct ground state self-interstitial configuration. Furthermore, by including liquid structures in the fit, the potential yields a Re melting temperature (3130 K) that is close to the experimental value (3459 K).

Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium

International Nuclear Information System (INIS)

Londos, C A; Andrianakis, A; Emtsev, V V; Ohyama, H

2009-01-01

Formation processes of vacancy-oxygen (VO) and carbon interstitial-oxygen interstitial (C i O i ) complexes in electron-irradiated Czochralski-grown Si crystals (Cz–Si), also doped with Ge, are investigated. IR spectroscopy measurements are employed to monitor the production of these defects. In Cz–Si with carbon concentrations [C s ] up to 1 × 10 17 cm −3 and Ge concentrations [Ge] up to 1 × 10 20 cm −3 the production rate of VO defects as well as the rate of oxygen loss show a slight growth of about 10% with the increasing Ge concentration. At high concentrations of carbon [C s ] around 2 × 10 17 cm −3 the production rate of VO defects is getting larger by ∼40% in Cz–Si:Ge at Ge concentrations around 1 × 10 19 cm −3 and then at [Ge] ≈ 2 × 10 20 cm −3 this enlargement drops to ∼13%, thus approaching the values characteristic of lesser concentrations of carbon. A similar behavior against Ge concentration displays the production rate of C i O i complexes. The same trend is also observed for the rate of carbon loss, whereas the trend for the rate of oxygen loss is opposite. The behavior of Ge atoms is different at low and high concentrations of this isoelectronic impurity in Cz–Si. At low concentrations most isolated Ge atoms serve as temporary traps for vacancies preventing them from indirect annihilation with self-interstitials. At high concentrations Ge atoms are prone to form clusters. The latter ones are traps for vacancies and self-interstitials due to the strain fields, increasing the importance of indirect annihilation of intrinsic point defects. Such a model allows one to give a plausible explanation for the obtained results. A new band at 994 cm −1 seen only in irradiated Ge-doped Cz–Si is also studied. Interestingly, its annealing behavior was found to be very similar to that of VO complexes

Self-defects and self diffusion in a silica glass: a first-principles study; Etude ab-initio des auto-defauts et des mecanismes d'auto-diffusion dans un verre de silice

Energy Technology Data Exchange (ETDEWEB)

Martin, L.; Colomer, S

2004-11-15

SiO{sub 2} and silica based compounds are key materials in a variety of scientific and technological fields as, for instance, in microelectronics or nuclear technology. In all these fields, one of the still open questions is their long term aging in a radioactive environment. Due to the complexity of the effects of radiations upon matter, the understanding of the long term aging needs the knowledge of diffusion mechanisms at the atomic scale. In that context, numerical modelling appears as a way to access this scale. We present a first principles study on self-defects and self-diffusion in a silica model. As expected, at variance with SiO{sub 2} crystalline phases, the defects formation energies are distributed, due to the non-equivalence of defects sites. We prove that the formation energy dispersion is correlated to the local stress. Concerning the equilibrium concentrations and oxygen diffusion mechanism, we discuss how the shape of the distribution, as well as impurity levels within the gap, play a main role in the dominance of defect types. Finally we present the main oxygen diffusion mechanism in homogeneous and heterogeneous defect formation regime. (author)

The fission yeast minichromosome maintenance (MCM)-binding protein (MCM-BP), Mcb1, regulates MCM function during prereplicative complex formation in DNA replication.

Science.gov (United States)

Santosa, Venny; Martha, Sabrina; Hirose, Noriaki; Tanaka, Katsunori

2013-03-08

The minichromosome maintenance (MCM) complex is a replicative helicase, which is essential for chromosome DNA replication. In recent years, the identification of a novel MCM-binding protein (MCM-BP) in most eukaryotes has led to numerous studies investigating its function and its relationship to the MCM complex. However, the mechanisms by which MCM-BP functions and associates with MCM complexes are not well understood; in addition, the functional role of MCM-BP remains controversial and may vary between model organisms. The present study aims to elucidate the nature and biological function of the MCM-BP ortholog, Mcb1, in fission yeast. The Mcb1 protein continuously interacts with MCM proteins during the cell cycle in vivo and can interact with any individual MCM subunit in vitro. To understand the detailed characteristics of mcb1(+), two temperature-sensitive mcb1 gene mutants (mcb1(ts)) were isolated. Extensive genetic analysis showed that the mcb1(ts) mutants were suppressed by a mcm5(+) multicopy plasmid and displayed synthetic defects with many S-phase-related gene mutants. Moreover, cyclin-dependent kinase modulation by Cig2 repression or Rum1 overproduction suppressed the mcb1(ts) mutants, suggesting the involvement of Mcb1 in pre-RC formation during DNA replication. These data are consistent with the observation that Mcm7 loading onto replication origins is reduced and S-phase progression is delayed in mcb1(ts) mutants. Furthermore, the mcb1(ts) mutation led to the redistribution of MCM subunits to the cytoplasm, and this redistribution was dependent on an active nuclear export system. These results strongly suggest that Mcb1 promotes efficient pre-RC formation during DNA replication by regulating the MCM complex.

The Fission Yeast Minichromosome Maintenance (MCM)-binding Protein (MCM-BP), Mcb1, Regulates MCM Function during Prereplicative Complex Formation in DNA Replication*

Science.gov (United States)

Santosa, Venny; Martha, Sabrina; Hirose, Noriaki; Tanaka, Katsunori

2013-01-01

The minichromosome maintenance (MCM) complex is a replicative helicase, which is essential for chromosome DNA replication. In recent years, the identification of a novel MCM-binding protein (MCM-BP) in most eukaryotes has led to numerous studies investigating its function and its relationship to the MCM complex. However, the mechanisms by which MCM-BP functions and associates with MCM complexes are not well understood; in addition, the functional role of MCM-BP remains controversial and may vary between model organisms. The present study aims to elucidate the nature and biological function of the MCM-BP ortholog, Mcb1, in fission yeast. The Mcb1 protein continuously interacts with MCM proteins during the cell cycle in vivo and can interact with any individual MCM subunit in vitro. To understand the detailed characteristics of mcb1+, two temperature-sensitive mcb1 gene mutants (mcb1ts) were isolated. Extensive genetic analysis showed that the mcb1ts mutants were suppressed by a mcm5+ multicopy plasmid and displayed synthetic defects with many S-phase-related gene mutants. Moreover, cyclin-dependent kinase modulation by Cig2 repression or Rum1 overproduction suppressed the mcb1ts mutants, suggesting the involvement of Mcb1 in pre-RC formation during DNA replication. These data are consistent with the observation that Mcm7 loading onto replication origins is reduced and S-phase progression is delayed in mcb1ts mutants. Furthermore, the mcb1ts mutation led to the redistribution of MCM subunits to the cytoplasm, and this redistribution was dependent on an active nuclear export system. These results strongly suggest that Mcb1 promotes efficient pre-RC formation during DNA replication by regulating the MCM complex. PMID:23322785

Interference-mediated synaptonemal complex formation with embedded crossover designation

Science.gov (United States)

Zhang, Liangran; Espagne, Eric; de Muyt, Arnaud; Zickler, Denise; Kleckner, Nancy E.

2014-01-01

Biological systems exhibit complex patterns at length scales ranging from the molecular to the organismic. Along chromosomes, events often occur stochastically at different positions in different nuclei but nonetheless tend to be relatively evenly spaced. Examples include replication origin firings, formation of chromatin loops along chromosome axes and, during meiosis, localization of crossover recombination sites (“crossover interference”). We present evidence in the fungus Sordaria macrospora that crossover interference is part of a broader pattern that includes synaptonemal complex (SC) nucleation. This pattern comprises relatively evenly spaced SC nucleation sites, among which a subset are crossover sites that show a classical interference distribution. This pattern ensures that SC forms regularly along the entire length of the chromosome as required for the maintenance of homolog pairing while concomitantly having crossover interactions locally embedded within the SC structure as required for both DNA recombination and structural events of chiasma formation. This pattern can be explained by a threshold-based designation and spreading interference process. This model can be generalized to give diverse types of related and/or partially overlapping patterns, in two or more dimensions, for any type of object. PMID:25380597

OTDM-to-WDM Conversion of Complex Modulation Formats by Time-Domain Optical Fourier Transformation

DEFF Research Database (Denmark)

Palushani, Evarist; Richter, T.; Ludwig, R.

2012-01-01

We demonstrate the utilization of the optical Fourier transform technique for serial-to-parallel conversion of 64×10-GBd OTDM data tributaries with complex modulation formats into 50-GHz DWDM grid without loss of phase and amplitude information.......We demonstrate the utilization of the optical Fourier transform technique for serial-to-parallel conversion of 64×10-GBd OTDM data tributaries with complex modulation formats into 50-GHz DWDM grid without loss of phase and amplitude information....

Formation Energies of Native Point Defects in Strained layer Superlattices (Postprint)

Science.gov (United States)

2017-06-05

1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law , no...Hamiltonian, tight-binding Hamiltonian, and Green’s function techniques to obtain energy levels arising from native point defects (NPDs) in InAs-GaSb and...GaSb systems and 2 designs of InAs-InAs 0.7 Sb 0.3 systems lattice matched to GaSb substrate. The calculated defect levels not only agree well with

Supersymmetric Conical Defects: Towards a string theoretic description of black hole formation

NARCIS (Netherlands)

Balasubramanian, V.; de Boer, J.; Keski-Vakkuri, E.; Ross, S.F.

2001-01-01

Conical defects, or point particles, in $AdS_3$ are one of the simplest non-trivial gravitating systems, and are particularly interesting because black holes can form from their collision. We embed the BPS conical defects of three dimensions into the N=4b supergravity in six dimensions, which arises

Topological defect formation and spontaneous symmetry breaking in ion Coulomb crystals.

Science.gov (United States)

Pyka, K; Keller, J; Partner, H L; Nigmatullin, R; Burgermeister, T; Meier, D M; Kuhlmann, K; Retzker, A; Plenio, M B; Zurek, W H; del Campo, A; Mehlstäubler, T E

2013-01-01

Symmetry breaking phase transitions play an important role in nature. When a system traverses such a transition at a finite rate, its causally disconnected regions choose the new broken symmetry state independently. Where such local choices are incompatible, topological defects can form. The Kibble-Zurek mechanism predicts the defect densities to follow a power law that scales with the rate of the transition. Owing to its ubiquitous nature, this theory finds application in a wide field of systems ranging from cosmology to condensed matter. Here we present the successful creation of defects in ion Coulomb crystals by a controlled quench of the confining potential, and observe an enhanced power law scaling in accordance with numerical simulations and recent predictions. This simple system with well-defined critical exponents opens up ways to investigate the physics of non-equilibrium dynamics from the classical to the quantum regime.

Defects in alpha and gamma crystalline nylon6: A computational study

Directory of Open Access Journals (Sweden)

Saeid Arabnejad

2015-10-01

Full Text Available We present a comparative Density Functional Tight Binding study of structures, energetics, and vibrational properties of α and γ crystalline phases of nylon6 with different types of defects: single and double chain vacancies and interstitials. The defect formation energies are: for a single vacancy 0.66 and 0.64 kcal/mol per monomer, and for an interstitial strand 1.35 and 2.45 kcal/mol per monomer in the α and γ phases, respectively. The presence of defects does not materially influence the relative stability of the two phases, within the accuracy of the method. The inclusion of phononic contributions has a negligible effect. The calculations show that even if it were possible to synthesize the pure phases of nylon6, the defects will be easily induced at room temperature, because vacancy formation energies in both phases are of the order of kT at room temperature. The formation of interstitial defects, on the contrary, requires the energy equivalent to multiple kT values and is much less likely; it is also much less probable in the γ phase than in α. The vibration spectra do not show significant sensitivity to the presence of these defects.

A simplified approach to the band gap correction of defect formation energies: Al, Ga, and In-doped ZnO

Science.gov (United States)

Saniz, R.; Xu, Y.; Matsubara, M.; Amini, M. N.; Dixit, H.; Lamoen, D.; Partoens, B.

2013-01-01

The calculation of defect levels in semiconductors within a density functional theory approach suffers greatly from the band gap problem. We propose a band gap correction scheme that is based on the separation of energy differences in electron addition and relaxation energies. We show that it can predict defect levels with a reasonable accuracy, particularly in the case of defects with conduction band character, and yet is simple and computationally economical. We apply this method to ZnO doped with group III elements (Al, Ga, In). As expected from experiment, the results indicate that Zn substitutional doping is preferred over interstitial doping in Al, Ga, and In-doped ZnO, under both zinc-rich and oxygen-rich conditions. Further, all three dopants act as shallow donors, with the +1 charge state having the most advantageous formation energy. Also, doping effects on the electronic structure of ZnO are sufficiently mild so as to affect little the fundamental band gap and lowest conduction bands dispersion, which secures their n-type transparent conducting behavior. A comparison with the extrapolation method based on LDA+U calculations and with the Heyd-Scuseria-Ernzerhof hybrid functional (HSE) shows the reliability of the proposed scheme in predicting the thermodynamic transition levels in shallow donor systems.

Annealing of radiation-induced defects in vanadium and vanadium-titanium alloys

International Nuclear Information System (INIS)

Leguey, T.

1996-01-01

The annealing of defects induced by electron irradiation up to a dose of 6.10 21 m -2 at T<293 K has been investigated in single-crystals of pure vanadium and in vanadium-titanium alloys with compositions 0.3, 1 and 5 at.% Ti using positron annihilation spectroscopy. The recovery of the positron annihilation parameters in V single-crystals indicates that the defect annealing takes place in the temperature range 410-470 K without formation of microvoids for the present irradiation conditions. For the alloys the recovery onset is shifted to 460 K, the width of the annealing stage is gradually broadened with increasing Ti content, and microvoids are formed for annealing temperatures at the end of the recovery stage. The results show that the vacancy release from vacancy-interstitial impurity pairs and subsequent recombination with interstitial loops is the mechanism of the recovery in pure V. For V-Ti alloys, vacancy-Ti-interstitial impurity complexes and vacancy-Ti pairs appear to be the defects responsible for the positron trapping. The broadening of the recovery stage with increasing Ti content indicates that solute Ti is a very effective trap for vacancies in V. (orig.)

Cumulative approaches to track formation under swift heavy ion (SHI) irradiation: Phenomenological correlation with formation energies of Frenkel pairs

Energy Technology Data Exchange (ETDEWEB)

Crespillo, M.L., E-mail: mcrespil@utk.edu [Centro de Microanálisis de Materiales, CMAM-UAM, Cantoblanco, Madrid 28049 (Spain); Department of Materials Science & Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Agulló-López, F., E-mail: fal@uam.es [Centro de Microanálisis de Materiales, CMAM-UAM, Cantoblanco, Madrid 28049 (Spain); Zucchiatti, A. [Centro de Microanálisis de Materiales, CMAM-UAM, Cantoblanco, Madrid 28049 (Spain)

2017-03-01

Highlights: • Extensive survey formation energies Frenkel pairs and electronic stopping thresholds. • Correlation: track formation thresholds and the energies for Frenkel pair formation. • Formation energies Frenkel pairs discussed in relation to the cumulative mechanisms. • Amorphous track formation mechanisms: defect accumulation models versus melting. • Advantages cumulative models to deal with new hot topics: nuclear-electronic synergy. - Abstract: An extensive survey for the formation energies of Frenkel pairs, as representative candidates for radiation-induced point defects, is presented and discussed in relation to the cumulative mechanisms (CM) of track formation in dielectric materials under swift heavy ion (SHI) irradiation. These mechanisms rely on the generation and accumulation of point defects during irradiation followed by collapse of the lattice once a threshold defect concentration is reached. The physical basis of those approaches has been discussed by Fecht as a defect-assisted transition to an amorphous phase. Although a first quantitative analysis of the CM model was previously performed for LiNbO{sub 3} crystals, we have, here, adopted a broader phenomenological approach. It explores the correlation between track formation thresholds and the energies for Frenkel pair formation for a broad range of materials. It is concluded that the threshold stopping powers can be roughly scaled with the energies required to generate a critical Frenkel pair concentration in the order of a few percent of the total atomic content. Finally, a comparison with the predictions of the thermal spike model is discussed within the analytical Szenes approximation.

Star-formation complexes in the `galaxy-sized' supergiant shell of the galaxy Holmberg I

Science.gov (United States)

Egorov, Oleg V.; Lozinskaya, Tatiana A.; Moiseev, Alexei V.; Smirnov-Pinchukov, Grigory V.

2018-05-01

We present the results of observations of the galaxy Holmberg I carried out at the Russian 6-m telescope in the narrow-band imaging, long-slit spectroscopy, and scanning Fabry-Perot interferometer modes. A detailed analysis of gas kinematics, ionization conditions, and metallicity of star-forming regions in the galaxy is presented. The aim of the paper is to analyse the propagation of star formation in the galaxy and to understand the role of the ongoing star formation in the evolution of the central `galaxy-sized' supergiant H I shell (SGS), where all regions of star formation are observed. We show that star formation in the galaxy occurs in large unified complexes rather than in individual giant H II regions. Evidence of the triggered star formation is observed both on scales of individual complexes and of the whole galaxy. We identified two supernova-remnant candidates and one late-type WN star and analysed their spectrum and surrounding-gas kinematics. We provide arguments indicating that the SGS in Holmberg I is destructing by the influence of star formation occurring on its rims.

The predictors of dislodgement and outcomes of transcatheter closure of complex atrial septal defects in adolescents and adults

Directory of Open Access Journals (Sweden)

Wei-Chieh Lee

2015-11-01

Conclusion: Eroded and floppy IAS or aneurysm formation post ASO implantation and peri-procedure arrhythmia could predict ASO dislodgement in complex ASD closure. Transcatheter closure of ASDs under TEE guidance is feasible in complex cases.

Diameter Dependence of Planar Defects in InP Nanowires.

Science.gov (United States)

Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y B; Ho, Johnny C

2016-09-12

In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of "bottom-up" InP NWs with minimized defect concentration which are suitable for various device applications.

[Progression of nerve fiber layer defects in retrobulbar optic neuritis by the macular ganglion cell complex].

Science.gov (United States)

Hong, D; Bosc, C; Chiambaretta, F

2017-11-01

Recent studies with SD OCT had shown early axonal damage to the macular ganglion cell complex (which consists of the three innermost layers of the retina: Inner Plexiform Layer [IPL], Ganglion Cell Layer [GCL], Retinal Nerve Fibre layer [RNFL]) in optic nerve pathology. Retrobulbar optic neuritis (RBON), occurring frequently in demyelinating diseases, leads to atrophy of the optic nerve fibers at the level of the ganglion cell axons, previously described in the literature. The goal of this study is to evaluate the progression of optic nerve fiber defects and macular ganglion cell complex defects with the SPECTRALIS OCT via a reproducible method by calculating a mean thickness in each quadrant after an episode of retrobulbar optic neuritis. This is a prospective monocentric observational study including 8 patients at the Clermont-Ferrand university medical center. All patients underwent ocular examination with macular and disc OCT analysis and a Goldmann visual field at the time of inclusion (onset or recurrence of RBON), at 3 months and at 6 months. Patients were 40-years-old on average at the time of inclusion. After 6 months of follow-up, there was progression of the atrophy of the macular ganglion cell complex in the affected eye on (11.5% or 11μm) predominantly inferonasally (13.9% or 16μm) and superonasally (12.9% or 14μm) while the other eye remained stable. The decrease in thickness occurred mainly in the most internal 3 layers of the retina. On average, the loss in thickness of the peripapillary RNFL was predominantly inferotemporal (24.9% or 39μm) and superotemporal (21.8% or 28μm). In 3 months of progression, the loss of optic nerve fibers is already seen on macular and disc OCT after an episode of RBON, especially in inferior quadrants in spite of the improvement in the Goldmann visual field and visual acuity. Segmentation by quadrant was used here to compare the progression of the defect by region compared to the fovea in a global and reproducible

Process of defect formation in alkaline halogenides contaminated with Eu2+ induced by non ionizing radiation

International Nuclear Information System (INIS)

Pedroza M, M.; Melendrez, R.; Barboza F, M.; Castaneda, B.

2004-01-01

The creation of defects in polluted alkaline halogenides with divalent impurities exposed to ionizing radiation is explained by means of the creation of auto trapped excitons (STE), which can be formed by means of the excitement of the halogen ion or through the trapping of electrons in centers V K taken place during the process of ionization of the halogen ion. The luminescent recombination of the exciton auto trapped produces a characteristic exciton luminescence and the recombination non radiative causes the formation of the Frenkel type defects, even of centers F - H. Experimentally has been demonstrated that the same type of glasses, exposed to radiation non ionizing of the type UV of around 230 nm, they produce defects similar Frenkel. The situation is interesting all time that photons of 230 nm (5.3 eV) they cannot create excitons directly since they are in an energy level of approximately 2.4 inferior eV to the necessary energy for the production of the same ones. In order to investigating the type of process of creation of defects with UV light energy below the energy of the band prohibited in polluted alkaline halogenides with Eu 2+ , mainly looking for experimental information that allows to explain the creation of defects taken place by the radiation non ionizing, one carries out the present work. It was found that, independently of the energy of the radiation used for the excitement, the emission comes from the transition 4f 6 5d(t 2g )-4f 7 ( 8 S 7/2 ) of the ion Eu 2+ characterized by a wide band centered in 420 nm and an additional component in 460 nm of possibly intrinsic origin. It was determined that so much the F centers and F z participate in the thermoluminescent processes and of optically stimulated luminescence, achieving to identify those peaks of Tl strictly associated to the F centers (peak in 470 K for the KCl: Eu 2+ ) and F z (peak in 370 K). Also, by means of a process of selective photo stimulation evidence was obtained that the F

MECHANISMS OF THE COMPLEX FORMATION BY d-METALS ON POROUS SUPPORTS AND THE CATALYTIC ACTIVITY OF THE FORMED COMPLEXES IN REDOX REACTIONS

Directory of Open Access Journals (Sweden)

T. L. Rakitskaya

2015-11-01

Full Text Available The catalytic activity of supported complexes of d metals in redox reactions with participation of gaseous toxicants, PH3, CO, O3, and SO2, depends on their composition. Owing to the variety of physicochemical and structural-adsorption properties of available supports, their influence on complex formation processes, the composition and catalytic activity of metal complexes anchored on them varies over a wide range. The metal complex formation on sup-ports with weak ion-exchanging properties is similar to that in aqueous solutions. In this case, the support role mainly adds up to the ability to reduce the activity of water adsorbed on them. The interaction between a metal complex and a support surface occurs through adsorbed water molecules. Such supports can also affect complex formation processes owing to protolytic reactions on account of acidic properties of sorbents used as supports. The catalytic activity of metal complexes supported on polyphase natural sorbents considerably depends on their phase relationship. In the case of supports with the nonsimple structure and pronounced ion-exchanging properties, for instance, zeolites and laminar silicates, it is necessary to take into account the variety of places where metal ions can be located. Such location places determine distinctions in the coordination environment of the metal ions and the strength of their bonding with surface adsorption sites and, therefore, the catalytic activity of surface complexes formed by theses metal ions. Because of the energy surface inhomogeneity, it is important to determine a relationship between the strength of a metal complex bonding with a support surface and its catalytic activity. For example, bimetallic complexes are catalytically active in the reactions of oxidation of the above gaseous toxicants. In particular, in the case of carbon monoxide oxidation, the most catalytic activity is shown by palladium-copper complexes in which copper(II is strongly

Anelastic relaxation of interstitial foreign atoms and their complexes with intrinsic defects in B.C.C. metals

International Nuclear Information System (INIS)

Weller, M.

1985-01-01

In body-centred cubic metals, heavy interstitial foreign atoms (IFA) O, N and C give rise to relaxations of Snoek type. For dilute alloys, relaxation parameters are summarized. In concentrated alloys (group Va metals containing O or N) Snoek relaxations are influenced by the interaction of IFA. The recent controversy is discussed as to whether this interaction is based on clustering or anticlustering. In irradiated metals complexes of IFA with intrinsic atomic defects (vacancies or self interstitial atoms) also give rise to relaxations

Defects in Amorphous Semiconductors: The Case of Amorphous Indium Gallium Zinc Oxide

Science.gov (United States)

de Jamblinne de Meux, A.; Pourtois, G.; Genoe, J.; Heremans, P.

2018-05-01

Based on a rational classification of defects in amorphous materials, we propose a simplified model to describe intrinsic defects and hydrogen impurities in amorphous indium gallium zinc oxide (a -IGZO). The proposed approach consists of organizing defects into two categories: point defects, generating structural anomalies such as metal—metal or oxygen—oxygen bonds, and defects emerging from changes in the material stoichiometry, such as vacancies and interstitial atoms. Based on first-principles simulations, it is argued that the defects originating from the second group always act as perfect donors or perfect acceptors. This classification simplifies and rationalizes the nature of defects in amorphous phases. In a -IGZO, the most important point defects are metal—metal bonds (or small metal clusters) and peroxides (O - O single bonds). Electrons are captured by metal—metal bonds and released by the formation of peroxides. The presence of hydrogen can lead to two additional types of defects: metal-hydrogen defects, acting as acceptors, and oxygen-hydrogen defects, acting as donors. The impact of these defects is linked to different instabilities observed in a -IGZO. Specifically, the diffusion of hydrogen and oxygen is connected to positive- and negative-bias stresses, while negative-bias illumination stress originates from the formation of peroxides.

A first principles study of native defects in alpha-quartz

CERN Document Server

Roma, G

2003-01-01

We present a study of several neutral and charged oxygen and silicon defects in alpha-quartz. We performed plane waves pseudopotential calculations in the framework of density functional theory in the local density approximation. We will show the structures that we obtained for vacancies and interstitials in several charge states and the corresponding formation energies. We discuss the reciprocal dependence of formation energies of charged defects (and thus concentrations) and the electron chemical potential on each other and we determine the latter by iterative self-consistent solution of the equation imposing charge neutrality. Results on defect concentrations, their dependence on oxygen partial pressure, and self-doping effects are presented.

Calculations of radiation defect formation cross sections in reactor materials in (n,p) and (n,α) reactions

International Nuclear Information System (INIS)

Kupchishin, A.A.; Kupchishin, A.I.; Omarbekova, Zh.

2001-01-01

In the work an experimental data analysis by integral σ(E 1 ) and differential [dσ(E 1 ,E 2 )]/dE 2 neutron interaction cross sections with reactor materials with the secondary protons and alpha particles generation as well as with the primarily knock-on atoms production in such reactions are carried out. It is shown, that in the (n,p) and (n',α) reactions the recoil nuclei receive essential energy portion and they are the patriarchs for atom-atom cascades in the substance. Nuclear reactions with formation of the secondary α-particles and and recoil nuclei are considered. It is shown, that these reactions are effectively proceeding within neutrons energy range 0.3-15 MeV. The nuclear reactions kinematics of above mentioned processes is studied. Energy conservation law for these reaction is applied. Deferential cross section conservation and transformation law for radiation defect formation in the (n,α) reaction are considered as well

Generating functional analysis of complex formation and dissociation in large protein interaction networks

International Nuclear Information System (INIS)

Coolen, A C C; Rabello, S

2009-01-01

We analyze large systems of interacting proteins, using techniques from the non-equilibrium statistical mechanics of disordered many-particle systems. Apart from protein production and removal, the most relevant microscopic processes in the proteome are complex formation and dissociation, and the microscopic degrees of freedom are the evolving concentrations of unbound proteins (in multiple post-translational states) and of protein complexes. Here we only include dimer-complexes, for mathematical simplicity, and we draw the network that describes which proteins are reaction partners from an ensemble of random graphs with an arbitrary degree distribution. We show how generating functional analysis methods can be used successfully to derive closed equations for dynamical order parameters, representing an exact macroscopic description of the complex formation and dissociation dynamics in the infinite system limit. We end this paper with a discussion of the possible routes towards solving the nontrivial order parameter equations, either exactly (in specific limits) or approximately.

Influence of Different Defects in Vertically Aligned Carbon Nanotubes on TiO2 Nanoparticle Formation through Atomic Layer Deposition.

Science.gov (United States)

Acauan, Luiz; Dias, Anna C; Pereira, Marcelo B; Horowitz, Flavio; Bergmann, Carlos P

2016-06-29

The chemical inertness of carbon nanotubes (CNT) requires some degree of "defect engineering" for controlled deposition of metal oxides through atomic layer deposition (ALD). The type, quantity, and distribution of such defects rules the deposition rate and defines the growth behavior. In this work, we employed ALD to grow titanium oxide (TiO2) on vertically aligned carbon nanotubes (VACNT). The effects of nitrogen doping and oxygen plasma pretreatment of the CNT on the morphology and total amount of TiO2 were systematically studied using transmission electron microscopy, Raman spectroscopy, and thermogravimetric analysis. The induced chemical changes for each functionalization route were identified by X-ray photoelectron and Raman spectroscopies. The TiO2 mass fraction deposited with the same number of cycles for the pristine CNT, nitrogen-doped CNT, and plasma-treated CNT were 8, 47, and 80%, respectively. We demonstrate that TiO2 nucleation is dependent mainly on surface incorporation of heteroatoms and their distribution rather than structural defects that govern the growth behavior. Therefore, selecting the best way to functionalize CNT will allow us to tailor TiO2 distribution and hence fabricate complex heterostructures.

Lateral Fluid Percussion Injury Impairs Hippocampal Synaptic Soluble N-Ethylmaleimide Sensitive Factor Attachment Protein Receptor Complex Formation

Directory of Open Access Journals (Sweden)

Shaun W. Carlson

2017-10-01

Full Text Available Traumatic brain injury (TBI and the activation of secondary injury mechanisms have been linked to impaired cognitive function, which, as observed in TBI patients and animal models, can persist for months and years following the initial injury. Impairments in neurotransmission have been well documented in experimental models of TBI, but the mechanisms underlying this dysfunction are poorly understood. Formation of the soluble N-ethylmaleimide-sensitive factor attachment protein receptor (SNARE complex facilitates vesicular docking and neurotransmitter release in the synaptic cleft. Published studies highlight a direct link between reduced SNARE complex formation and impairments in neurotransmitter release. While alterations in the SNARE complex have been described following severe focal TBI, it is not known if deficits in SNARE complex formation manifest in a model with reduced severity. We hypothesized that lateral fluid percussion injury (lFPI reduces the abundance of SNARE proteins, impairs SNARE complex formation, and contributes to impaired neurobehavioral function. To this end, rats were subjected to lFPI or sham injury and tested for acute motor performance and cognitive function at 3 weeks post-injury. lFPI resulted in motor impairment between 1 and 5 days post-injury. Spatial acquisition and spatial memory, as assessed by the Morris water maze, were significantly impaired at 3 weeks after lFPI. To examine the effect of lFPI on synaptic SNARE complex formation in the injured hippocampus, a separate cohort of rats was generated and brains processed to evaluate hippocampal synaptosomal-enriched lysates at 1 week post-injury. lFPI resulted in a significant reduction in multiple monomeric SNARE proteins, including VAMP2, and α-synuclein, and SNARE complex abundance. The findings in this study are consistent with our previously published observations suggesting that impairments in hippocampal SNARE complex formation may contribute to

On the formation of white-spot defects in a superalloy VAR ingot

Energy Technology Data Exchange (ETDEWEB)

Grignard, Jean Francois; Soller, Aude; Jourdan, Julien; Bellot, Jean-Pierre; Jardy, Alain [Institut Jean Lamour (UMR 7198), Ecole des Mines de Nancy, Parc de Saurupt, Nancy Cedex (France)

2011-07-15

For the production of nickel-based superalloys for the aerospace industry, strict control of the macrostructure of the product is necessary to avoid the appearance of potentially fatal defects. Our study focuses on the prevention of ''white spots'' in the alloy IN 718. These defects, which are small volumes of a few millimeters of characteristic length, are depleted in niobium. They are known to result from the fall of metal fragments in the liquid pool during VAR processing. According to their history in the liquid metal, these fragments could not being remelted before being trapped in the mushy zone and then give rise to defects. A model calculates the heat transfer in such a precursor to simulate its melting during his stay in the bath. The validation of the predicted melting kinetics requires a series of immersive experiences of synthetic defects in a metal bath. The model and experiments have demonstrated the initial solidification of a layer of metal around the precursor. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Polycomb complexes act redundantly to repress genomic repeats and genes

DEFF Research Database (Denmark)

Leeb, Martin; Pasini, Diego; Novatchkova, Maria

2010-01-01

Polycomb complexes establish chromatin modifications for maintaining gene repression and are essential for embryonic development in mice. Here we use pluripotent embryonic stem (ES) cells to demonstrate an unexpected redundancy between Polycomb-repressive complex 1 (PRC1) and PRC2 during...... the formation of differentiated cells. ES cells lacking the function of either PRC1 or PRC2 can differentiate into cells of the three germ layers, whereas simultaneous loss of PRC1 and PRC2 abrogates differentiation. On the molecular level, the differentiation defect is caused by the derepression of a set...

Mechanisms Underlying the Formation of Complexes between Maize Starch and Lipids.

Science.gov (United States)

Chao, Chen; Yu, Jinglin; Wang, Shuo; Copeland, Les; Wang, Shujun

2018-01-10

This study aimed to reveal the mechanism of formation of complexes between native maize starch (NMS) and different types of lipids, namely palmitic acid (PA), monopalmitate glycerol (MPG), dipalmitate glycerol (DPG), and tripalmitate glycerol (TPG). The complexing index followed the order of MPG (96.3%) > PA (41.8%) > TPG (8.3%) > DPG (1.1%), indicating that MPG formed more complexes with NMS than PA, and that few complexes were formed between NMS and DPG and TPG. The NMS-PA complex presented higher thermal transition temperatures and lower enthalpy change than the NMS-MPG complex, indicating that although MPG formed more starch complexes, they had less stable crystalline structures than the complex between NMS and PA. X-ray diffraction (XRD) and Raman spectroscopy showed that both MPG and PA formed V-type crystalline structures with NMS, and confirmed that no complexes were formed between NMS and DPG and TPG. We conclude that the monoglyceride formed more starch-lipid complex with maize starch than PA, but that the monoglyceride complex had a less stable structure than that formed with PA. The di- and triglycerides did not form complexes with maize starch.

Cracklike defects detection and sizing from co-occurrence matrices

International Nuclear Information System (INIS)

Moysan, J.; Benoist, P.; Magnin, I.

1991-01-01

The inspection of austenitic welds used in nuclear field with ultrasounds poses problems in interpretation: strong grain noise makes difficult the detection of the crack top and the crack bottom. Since corresponding echoes enable the defect sizing, defect sizing also becomes difficult. The formation of 2D images (BSCAN), and their processing enable an increase in the effectiveness of testing. We present a segmentation method, based on co-occurrence matrix, which separates defects zones and noise zones. Examples of segmentation improvement applied to artificial defects are presented

Point defects in thorium nitride: A first-principles study

Energy Technology Data Exchange (ETDEWEB)

Pérez Daroca, D., E-mail: pdaroca@tandar.cnea.gov.ar [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (Argentina); Llois, A.M. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (Argentina); Mosca, H.O. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Instituto de Tecnología Jorge A. Sabato, UNSAM-CNEA (Argentina)

2016-11-15

Thorium and its compounds (carbides and nitrides) are being investigated as possible materials to be used as nuclear fuels for Generation-IV reactors. As a first step in the research of these materials under irradiation, we study the formation energies and stability of point defects in thorium nitride by means of first-principles calculations within the framework of density functional theory. We focus on vacancies, interstitials, Frenkel pairs and Schottky defects. We found that N and Th vacancies have almost the same formation energy and that the most energetically favorable defects of all studied in this work are N interstitials. These kind of results for ThN, to the best authors' knowledge, have not been obtained previously, neither experimentally, nor theoretically.

Point defects in thorium nitride: A first-principles study

International Nuclear Information System (INIS)

Pérez Daroca, D.; Llois, A.M.; Mosca, H.O.

2016-01-01

Thorium and its compounds (carbides and nitrides) are being investigated as possible materials to be used as nuclear fuels for Generation-IV reactors. As a first step in the research of these materials under irradiation, we study the formation energies and stability of point defects in thorium nitride by means of first-principles calculations within the framework of density functional theory. We focus on vacancies, interstitials, Frenkel pairs and Schottky defects. We found that N and Th vacancies have almost the same formation energy and that the most energetically favorable defects of all studied in this work are N interstitials. These kind of results for ThN, to the best authors' knowledge, have not been obtained previously, neither experimentally, nor theoretically.

Cytokinesis defect in BY-2 cells caused by ATP-competitive kinase inhibitors.

Science.gov (United States)

Kozgunova, Elena; Higashiyama, Tetsuya; Kurihara, Daisuke

2016-10-02

Cytokinesis is last but not least in cell division as it completes the formation of the two cells. The main role in cell plate orientation and expansion have been assigned to microtubules and kinesin proteins. However, recently we reported severe cytokinesis defect in BY-2 cells not accompanied by changes in microtubules dynamics. Here we also confirmed that distribution of kinesin NACK1 is not the cause of cytokinesis defect. We further explored inhibition of the cell plate expansion by ATP-competitive inhibitors. Two different inhibitors, 5-Iodotubercidin and ML-7 resulted in a very similar phenotype, which indicates that they target same protein cascade. Interestingly, in our previous study we showed that 5-Iodotubercidin treatment affects concentration of actin filaments on the cell plate, while ML-7 is inhibitor of myosin light chain kinase. Although not directly, it indicates importance of actomyosin complex in plant cytokinesis.

The History and Rate of Star Formation within the G305 Complex

Science.gov (United States)

Faimali, Alessandro Daniele

2013-07-01

Within this thesis, we present an extended multiwavelength analysis of the rich massive Galactic star-forming complex G305. We have focused our attention on studying the both the embedded massive star-forming population within G305, while also identifying the intermediate-, to lowmass content of the region also. Though massive stars play an important role in the shaping and evolution of their host galaxies, the physics of their formation still remains unclear. We have therefore set out to studying the nature of star formation within this complex, and also identify the impact that such a population has on the evolution of G305. We firstly present a Herschel far-infrared study towards G305, utilising PACS 70, 160 micron and SPIRE 250, 350, and 500 micron observations from the Hi-GAL survey of the Galactic plane. The focus of this study is to identify the embedded massive star-forming population within G305, by combining far-infrared data with radio continuum, H2O maser, methanol maser, MIPS, and Red MSX Source survey data available from previous studies. From this sample we identify some 16 candidate associations are identified as embedded massive star-forming regions, and derive a two-selection colour criterion from this sample of log(F70/F500) >= 1 and log(F160/F350) >= 1.6 to identify an additional 31 embedded massive star candidates with no associated star-formation tracers. Using this result, we are able to derive a star formation rate (SFR) of 0.01 - 0.02 Msun/yr. Comparing this resolved star formation rate, to extragalactic star formation rate tracers (based on the Kennicutt-Schmidt relation), we find the star formation activity is underestimated by a factor of >=2 in comparison to the SFR derived from the YSO population. By next combining data available from 2MASS and VVV, Spitzer GLIMPSE and MIPSGAL, MSX, and Herschel Hi-GAL, we are able to identify the low-, to intermediate-mass YSOs present within the complex. Employing a series of stringent colour

Quantum chemical and thermodynamic calculations of fulvic and humic copper complexes in reactions of malachite and azurite formation

International Nuclear Information System (INIS)

Fomin, Vitaliy N.; Gogol, Daniil B.; Rozhkovoy, Ivan E.; Ponomarev, Dmitriy L.

2017-01-01

This article provides a thermodynamic evaluation of the reactions of humic and fulvic acids in the process of malachite and azurite mineralogenesis. Semi-empirical methods AM/1, MNDO, PM3, PM5, PM6 and PM7 were used to compute the heat of formation, enthalpy and entropy for thermodynamic calculations of the reactions performed on the basis of Hess's law. It is shown that methods PM6 and PM7 in the MOPAC software package provide good compliance with experimental and calculated heats of formation for copper complexes and alkaline earth metal complexes with organic acids. It is found that the malachite and azurite formation processes involving humus complexing substances are thermodynamically possible. - Highlights: • Copper and alkali-earth metal complexes with humic and fulvic acids are considered. • Quantum chemical calculation of thermodynamics for the structures was performed. • Semi-empirical methods PM6 and PM7 provide best correlation for the properties. • Parameters of basic copper carbonate formation reactions were obtained by Hess's law. • Processes of malachite and azurite formation from humus complexes are possible.

Tibial and fibular developmental fields defects

International Nuclear Information System (INIS)

Khoury, N.J.; Haddad, M.C.; Hourani, M.H.

1999-01-01

Malformations of the lower limbs are rare and heterogeneous anomalies. To explain the diversity and complexity of these abnormalities, authors introduced the concept of tibial and fibular developmental fields. Defects in these fields are responsible for different malformations, which have been described, to our knowledge, in only one report in the radiology literature. We present a case of a newborn with femoral bifurcation, absent fibulae and talar bones, ankle and foot malformations, and associated atrial septal defect. Our case is an example of defects in both fibular and tibial developmental fields. (orig.)

Effects of recoil-implanted oxygen on depth profiles of defects and annealing processes in P{sup +}-implanted Si studied using monoenergetic positron beams

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Moriya, Tsuyoshi; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Kitano, Tomohisa; Watanabe, Masahito; Kawano, Takao; Suzuki, Ryoichi; Ohdaira, Toshiyuki; Mikado, Tomohisa

1996-04-01

Effects of oxygen atoms recoiled from SiO{sub 2} films on depth profiles of defects and annealing processes in P{sup +}-implanted Si were studied using monoenergetic positron beams. For an epitaxial Si specimen, the depth profile of defects was found to be shifted toward the surface by recoil implantation of oxygen atoms. This was attributed to the formation of vacancy-oxygen complexes and a resultant decrease in the diffusion length of vacancy-type defects. The recoiled oxygen atoms stabilized amorphous regions introduced by P{sup +}-implantation, and the annealing of these regions was observed after rapid thermal annealing (RTA) at 700degC. For a Czochralski-grown Si specimen fabricated by through-oxide implantation, the recoiled oxygen atoms introduced interstitial-type defects upon RTA below the SiO{sub 2}/Si interface, and such defects were dissociated by annealing at 1000degC. (author)

Constitutional and thermal point defects in B2 NiAl

DEFF Research Database (Denmark)

Korzhavyi, P. A.; Ruban, Andrei; Lozovoi, A. Y.

2000-01-01

The formation energies of point defects and the interaction energies of various defect pairs in NiAl are calculated from first principles within an order N, locally self-consistent Green's-function method in conjunction with multipole electrostatic corrections to the atomic sphere approximation...... distance on their sublattice. The dominant thermal defects in Ni-rich and stoichiometric NiAl are calculated to be triple defects. In Al-rich alloys another type of thermal defect dominates, where two Ni vacancies are replaced by one antisite Al atom. As a result, the vacancy concentration decreases...

Defect formation in LaGa(Mg,Ni)O3-δ : A statistical thermodynamic analysis validated by mixed conductivity and magnetic susceptibility measurements

Science.gov (United States)

Naumovich, E. N.; Kharton, V. V.; Yaremchenko, A. A.; Patrakeev, M. V.; Kellerman, D. G.; Logvinovich, D. I.; Kozhevnikov, V. L.

2006-08-01

A statistical thermodynamic approach to analyze defect thermodynamics in strongly nonideal solid solutions was proposed and validated by a case study focused on the oxygen intercalation processes in mixed-conducting LaGa0.65Mg0.15Ni0.20O3-δ perovskite. The oxygen nonstoichiometry of Ni-doped lanthanum gallate, measured by coulometric titration and thermogravimetric analysis at 923-1223K in the oxygen partial pressure range 5×10-5to0.9atm , indicates the coexistence of Ni2+ , Ni3+ , and Ni4+ oxidation states. The formation of tetravalent nickel was also confirmed by the magnetic susceptibility data at 77-600K , and by the analysis of p -type electronic conductivity and Seebeck coefficient as function of the oxygen pressure at 1023-1223K . The oxygen thermodynamics and the partial ionic and hole conductivities are strongly affected by the point-defect interactions, primarily the Coulombic repulsion between oxygen vacancies and/or electron holes and the vacancy association with Mg2+ cations. These factors can be analyzed by introducing the defect interaction energy in the concentration-dependent part of defect chemical potentials expressed by the discrete Fermi-Dirac distribution, and taking into account the probabilities of local configurations calculated via binomial distributions.

Neuroradiologic findings in children with mitochondrial disorder: correlation with mitochondrial respiratory chain defects

International Nuclear Information System (INIS)

Kim, Jinna; Lee, Seung-Koo; Kim, Dong Ik; Kim, Eung Yeop; Lee, Young-Mock; Lee, Joon Soo; Kim, Heung Dong

2008-01-01

Mitochondrial disorders are a heterogeneous group of disorders affecting energy metabolism that can present at any age with a wide variety of clinical symptoms. We investigated brain magnetic resonance (MR) findings in 40 children with defects of the mitochondrial respiratory chain (MRC) complex and correlated them with the type of MRC defects. Enrolled were 40 children with MRC defects in biochemical enzyme assay of the muscle specimen. Twenty-one children were found to have classical syndromes of mitochondrial disorders and 19 children presented nonspecific mitochondrial encephalomyopathies. Their brain MR imaging findings were retrospectively reviewed and correlated with the biochemical defect in the MRC complex. Children with MRC defects showed various neuroradiologic features on brain MR imaging that resulted from a complex genetic background and a heterogeneous phenotype. Rapid progression of atrophy involving all structures of the brain with variable involvement of deep gray and white matter are the most frequent MR findings in children with MRC defects in both classical syndromes of mitochondrial disorder and nonspecific mitochondrial encephalomyopathies. The type of biochemical defect in the MRC complex enzyme did not correlate with brain MR findings in child patients. (orig.)

Neuroradiologic findings in children with mitochondrial disorder: correlation with mitochondrial respiratory chain defects

Energy Technology Data Exchange (ETDEWEB)

Kim, Jinna; Lee, Seung-Koo; Kim, Dong Ik [Yonsei University College of Medicine, Department of Radiology, Research Institute of Radiological Science, Seoul (Korea); Kim, Eung Yeop [Yonsei University College of Medicine, Department of Radiology, Research Institute of Radiological Science, Brain Korea 21 Project for Medical Science, Seoul (Korea); Lee, Young-Mock; Lee, Joon Soo [Yonsei University College of Medicine, Department of Pediatrics, Pediatric Epilepsy Clinics, Severance Children' s Hospital, Brain Research Institute, Seoul (Korea); Kim, Heung Dong [Yonsei University College of Medicine, Department of Pediatrics, Pediatric Epilepsy Clinics, Severance Children' s Hospital, Brain Research Institute, Seoul (Korea); Yonsei University College of Medicine, Department of Pediatrics, Seoul (Korea)

2008-08-15

Mitochondrial disorders are a heterogeneous group of disorders affecting energy metabolism that can present at any age with a wide variety of clinical symptoms. We investigated brain magnetic resonance (MR) findings in 40 children with defects of the mitochondrial respiratory chain (MRC) complex and correlated them with the type of MRC defects. Enrolled were 40 children with MRC defects in biochemical enzyme assay of the muscle specimen. Twenty-one children were found to have classical syndromes of mitochondrial disorders and 19 children presented nonspecific mitochondrial encephalomyopathies. Their brain MR imaging findings were retrospectively reviewed and correlated with the biochemical defect in the MRC complex. Children with MRC defects showed various neuroradiologic features on brain MR imaging that resulted from a complex genetic background and a heterogeneous phenotype. Rapid progression of atrophy involving all structures of the brain with variable involvement of deep gray and white matter are the most frequent MR findings in children with MRC defects in both classical syndromes of mitochondrial disorder and nonspecific mitochondrial encephalomyopathies. The type of biochemical defect in the MRC complex enzyme did not correlate with brain MR findings in child patients. (orig.)

Formation of p-type ZnO thin film through co-implantation

Science.gov (United States)

Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

2017-01-01

We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

Trans-complex formation by proteolipid channels in the terminal phase of membrane fusion

DEFF Research Database (Denmark)

Peters, C; Bayer, M J; Bühler, S

2001-01-01

-complex formation occurs downstream from trans-SNARE pairing, and depends on both the Rab-GTPase Ypt7 and calmodulin. The maintenance of existing complexes and completion of fusion are independent of trans-SNARE pairs. Reconstituted proteolipids form sealed channels, which can expand to form aqueous pores in a Ca2...

Proton transfer and complex formation of angiotensin I ions with gaseous molecules at various temperature

International Nuclear Information System (INIS)

Nonose, Shinji; Yamashita, Kazuki; Sudo, Ayako; Kawashima, Minami

2013-01-01

Highlights: • Proton transfer from angiotensin I ions (z = 2, 3) to gaseous molecules was studied. • Temperature dependence of absolute reaction rate constants was measured. • Remarkable changes were obtained for distribution of product ions and reaction rate constants. • Proton transfer reaction was enhanced and reduced by complex formation. • Conformation changes are induced by complex formation and or by thermal collision with He. - Abstract: Proton transfer reactions of angiotensin I ions for +2 charge state, [M + 2H] 2+ , to primary, secondary and aromatic amines were examined in the gas phase. Absolute reaction rate constants for proton transfer were determined from intensities of parent and product ions in the mass spectra. Temperature dependence of the reaction rate constants was measured. Remarkable change was observed for distribution of product ions and reaction rate constants. Proton transfer reaction was enhanced or reduced by complex formation of [M + 2H] 2+ with gaseous molecules. The results relate to conformation changes of [M + 2H] 2+ with change of temperature, which are induced by complex formation and or by thermal collision with He. Proton transfer reactions of angiotensin I ions for +3 charge state, [M + 3H] 3+ , were also studied. The reaction rates did not depend on temperature so definitely

Formation and field-driven dynamics of nematic spheroids.

Science.gov (United States)

Fu, Fred; Abukhdeir, Nasser Mohieddin

2017-07-19

Unlike the canonical application of liquid crystals (LCs), LC displays, emerging technologies based on LC materials are increasingly leveraging the presence of nanoscale defects. The inherent nanoscale characteristics of LC defects present both significant opportunities as well as barriers for the application of this fascinating class of materials. Simulation-based approaches to the study of the effects of confinement and interface anchoring conditions on LC domains has resulted in significant progress over the past decade, where simulations are now able to access experimentally-relevant length scales while simultaneously capturing nanoscale defect structures. In this work, continuum simulations were performed in order to study the dynamics of micron-scale nematic LC spheroids of varying shape. Nematic spheroids are one of the simplest inherently defect-containing LC structures and are relevant to polymer-dispersed LC-based "smart" window technology. Simulation results include nematic phase formation and external field-switching dynamics of nematic spheroids ranging in shape from oblate to prolate. Results include both qualitative and quantitative insight into the complex coupling of nanoscale defect dynamics and structure transitions to micron-scale reorientation. Dynamic mechanisms are presented and related to structural transitions in LC defects present in the nematic domain. Domain-averaged metrics including order parameters and response times are determined for a range of experimentally-accessible electric field strengths. These results have both fundamental and technological relevance, in that increased understanding of LC dynamics in the presence of defects is a key barrier to continued advancement in the field.

Electron paramagnetic resonance study on the ionizing radiation induced defects of the tooth enamel hydroxyapatite

International Nuclear Information System (INIS)

Oliveira, Liana Macedo de

1995-01-01

Hydroxyapatite is the main constituent of calcified tissues. Defects induced by ionizing radiations in this biomineral can present high stability and then, these are used as biological markers in radiological accidents, irradiated food identifying and geological and archaeological dating. In this work, paramagnetic centers induced on the enamel of the teeth by environmental ionizing radiation, are investigated by electron paramagnetic resonance (EPR). Decay thermal kinetic presents high complexity and shows the formation of different electron ligation energy centers and structures

Repairing Nanoparticle Surface Defects

NARCIS (Netherlands)

Marino, Emanuele; Kodger, Thomas E.; Crisp, R.W.; Timmerman, Dolf; MacArthur, Katherine E.; Heggen, Marc; Schall, Peter

2017-01-01

Solar devices based on semiconductor nanoparticles require the use of conductive ligands; however, replacing the native, insulating ligands with conductive metal chalcogenide complexes introduces structural defects within the crystalline nanostructure that act as traps for charge carriers. We

Defect characterization in high-purity silicon after γ- and hadron irradiation

International Nuclear Information System (INIS)

Stahl, J.

2004-07-01

The challenge for silicon particle detectors in future high energy physics experiments caused by extreme radiation fields can only be met by an appropriate defect engineering of the starting material. Appreciable improvements had already been obtained by enriching high resistivity float zone silicon with oxygen as demonstrated by the CERN RD48 collaboration. This thesis will focus on the difference observed after irradiation between standard and oxygenated float zone and detector grade Czochralski silicon. Results obtained with diodes manufactured on epitaxial layers are also included, envisioning effects arising from the possible migration of impurities during the crystal growth from the oxygen rich Czochralski substrate. Deep level transient spectroscopy (DLTS) and thermally stimulated current (TSC) measurements have been performed for defect characterization after γ- and hadron irradiation. Also a new high resolution DLTS technique has been used for the first time to separate defect levels with similar parameters. During the microscopic studies additionally to the well known defects like VO i , V 2 , C i O i or VP, four new radiation induced defects have been discovered and characterized. Two of these defects are closely correlated with the detector performance: A deep acceptor labeled as I-defect, and a bistable donor (BD). The formation of the I-defect is strongly suppressed in oxygen rich materials, while the formation of the BD is suppressed in oxygen lean material. With their properties the I- and the BD-defect are able to explain the different macroscopic behavior of standard and oxygen enriched float zone silicon after γ-irradiation. Furthermore, the BD defect is most probably responsible for the observation that in Cz and Epi diodes space charge sign inversion does not occur even after high fluences of proton irradiation. Additionally the γ-irradiated diodes were annealed at temperatures between 100 C and 350 C. During these studies some new reaction

Characterization of point defects in monolayer arsenene

Science.gov (United States)

Liang, Xiongyi; Ng, Siu-Pang; Ding, Ning; Wu, Chi-Man Lawrence

2018-06-01

Topological defects that are inevitably found in 2D materials can dramatically affect their properties. Using density functional theory (DFT) calculations and ab initio molecular dynamics (AIMD) method, the structural, thermodynamic, electronic and magnetic properties of six types of typical point defects in arsenene, i.e. the Stone-Wales defect, single and double vacancies and adatoms, were systemically studied. It was found that these defects were all more easily generated in arsenene with lower formation energies than those with graphene and silicene. Stone-Wales defects can be transformed from pristine arsenene by overcoming a barrier of 2.19 eV and single vacancy defects tend to coalesce into double vacancy defects by diffusion. However, a type of adatom defect does not exhibit kinetic stability at room temperature. In addition, SV defects and another type of adatom defect can remarkably affect the electronic and magnetic properties of arsenene, e.g. they can introduce localized states near the Fermi level, as well as a strongly local magnetic moment due to dangling bond and unpaired electron. Furthermore, the simulated scanning tunneling microscopy (STM) and Raman spectroscopy were computed and the types of point defects can be fully characterized by correlating the STM images and Raman spectra to the defective atomistic structures. The results provide significant insights to the effect of defects in arsenene for potential applications, as well as identifications of two helpful tools (STM and Raman spectroscopy) to distinguish the type of defects in arsenene for future experiments.

Characterization of tetratricopeptide repeat-containing proteins critical for cilia formation and function.

Directory of Open Access Journals (Sweden)

Yanan Xu

Full Text Available Cilia formation and function require a special set of trafficking machinery termed intraflagellar transport (IFT, consisting mainly of protein complexes IFT-A, IFT-B, BBSome, and microtubule-dependent molecular motors. Tetratricopeptide repeat-containing (TTC proteins are widely involved in protein complex formation. Nine of them are known to serve as components of the IFT or BBSome complexes. How many TTC proteins are cilia-related and how they function, however, remain unclear. Here we show that twenty TTC genes were upregulated by at least 2-fold during the differentiation of cultured mouse tracheal epithelial cells (MTECs into multiciliated cells. Our systematic screen in zebrafish identified four novel TTC genes, ttc4, -9c, -36, and -39c, that are critical for cilia formation and motility. Accordingly, their zebrafish morphants displayed typical ciliopathy-related phenotypes, including curved body, abnormal otolith, hydrocephalus, and defective left-right patterning. The morphants of ttc4 and ttc25, a known cilia-related gene, additionally showed pronephric cyst formation. Immunoprecipitation indicated associations of TTC4, -9c, -25, -36, and -39c with components or entire complexes of IFT-A, IFT-B, or BBSome, implying their participations in IFT or IFT-related activities. Our results provide a global view for the relationship between TTC proteins and cilia.

Thermodynamic study on salt effects on complex formation of α-, β- and γ-cyclodextrins with p-aminobenzoic acid

International Nuclear Information System (INIS)

Chibunova, E.S.; Kumeev, R.S.; Terekhova, I.V.

2015-01-01

Highlights: • Thermodynamic study on salt effects in CD/pABA complex formation was performed. • Effects of KCl, KH 2 PO 4 and K 2 SO 4 are insignificant and nonspecific. • Specific influence of KBr is caused by the ability of Br − to penetrate into CD cavity. • Coexistence of two complexation equilibria is accompanied by solvent reorganization. - Abstract: The aim of this work was to gain a deeper understanding of salt effects in the inclusion complex formation of cyclodextrins. For this purpose, thermodynamic study of complex formation of α-, β- and γ-cyclodextrins with p-aminobenzoic acid was carried out in water and solutions of KCl, KBr, KH 2 PO 4 and K 2 SO 4 (0.2 mol/kg). Stability constants were calculated from the binding isotherms obtained on the basis of 1 H NMR measurements. Enthalpy and entropy of complex formation were estimated from the van’t Hoff plots. It was found that effects of KCl, KH 2 PO 4 and K 2 SO 4 are insignificant, while the influence of KBr on complex formation of cyclodextrins with p-aminobenzoic acid is more pronounced and results in a decrease of the stability constants. Specific action of Br − is caused by the ability of these anions to penetrate into macrocyclic cavity. Coexistence of two complexation equilibria in KBr solution is accompanied by significant solvent reorganization originated from more intensive dehydration of the interacting species. This results in an increase of the enthalpy and entropy of complex formation. Manifestation of Br − effect was found to be the same in the binding of p-aminobenzoic acid with α-, β- and γ-cyclodextrins.

Rabbit articular cartilage defects treated by allogenic chondrocyte transplantation

OpenAIRE

Boopalan, P. R. J. V. C.; Sathishkumar, Solomon; Kumar, Senthil; Chittaranjan, Samuel

2006-01-01

Articular cartilage defects have a poor capacity for repair. Most of the current treatment options result in the formation of fibro-cartilage, which is functionally inferior to normal hyaline articular cartilage. We studied the effectiveness of allogenic chondrocyte transplantation for focal articular cartilage defects in rabbits. Chondrocytes were cultured in vitro from cartilage harvested from the knee joints of a New Zealand White rabbit. A 3 mm defect was created in the articular cartilag...

Shallow nitrogen ion implantation: Evolution of chemical state and defect structure in titanium

Energy Technology Data Exchange (ETDEWEB)

Manojkumar, P.A., E-mail: manoj@igcar.gov.in [Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Chirayath, V.A.; Balamurugan, A.K.; Krishna, Nanda Gopala; Ilango, S.; Kamruddin, M.; Amarendra, G.; Tyagi, A.K. [Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India); Raj, Baldev [National Institute of Advanced Studies, Bangalore 560 012 (India)

2016-09-15

Highlights: • Low energy nitrogen ion implantation in titanium was studied. • Chemical and defect states were analyzed using SIMS, XPS and PAS. • SIMS and depth resolved XPS data showed good agreement. • Depth resolved defect and chemical states information were revealed. • Formation of 3 layers of defect states proposed to fit PAS results. - Abstract: Evolution of chemical states and defect structure in titanium during low energy nitrogen ion implantation by Plasma Immersion Ion Implantation (PIII) process is studied. The underlying process of chemical state evolution is investigated using secondary ion mass spectrometry and X-ray photoelectron spectroscopy. The implantation induced defect structure evolution as a function of dose is elucidated using variable energy positron annihilation Doppler broadening spectroscopy (PAS) and the results were corroborated with chemical state. Formation of 3 layers of defect state was modeled to fit PAS results.

Theory of defect interactions in metals

International Nuclear Information System (INIS)

Thetford, Roger.

1989-09-01

The state relaxation program DEVIL has been updated to use N-body Finnis-Sinclair potentials. Initial calculations of self-interstitial and monovacancy formation energies confirm that the modified program is working correctly. An extra repulsive pair potential (constructed to leave the original fitting unaltered) overcomes some deficiencies in the published Finnis-Sinclair potentials. The modified potentials are used to calculate interstitial energies and relaxation in the b.c.c. transition metals vanadium, niobium, tantalum, molybdenum and tungsten. Further adaptation enables DEVIL to model dislocations running parallel to any lattice vector. Periodic boundary conditions are applied in the direction of the dislocation line, giving an infinite straight dislocation. The energies per unit length of two different dislocations are compared with experiment. A study of migration of point defects in the perfect lattice provides information on the mobility of interstitials and vacancies. The total energy needed to form and migrate an interstitial is compared with that required for a vacancy. The interaction between point defects and dislocations is studied in detail. Binding energies for both self-interstitials and monovacancies at edge dislocations are calculated for the five metals. Formation energies of the point defects in the neighbourhood of the edge dislocation are calculated for niobium, and the extend of the regions from which the defects are spontaneously absorbed are found. (author)

[Prevalence of birth defects according to the level of care in two hospitals, Cali, Colombia, 2012-2013].

Science.gov (United States)

Pachajoa, Harry; Villota, Vania A; Cruz, Luz Marina; Ariza, Yoseth

2015-01-01

Birth defects are morphologic alterations diagnosed prenatal or postnatally. Surveillance systems have been used to estimate the prevalence in high complexity care centers; however, the variation of the prevalence among different complexity care centers remains unknown. To compare the prevalence of birth defects among two different complexity care centers in Cali, Colombia. A descriptive hospital-based study following the methodology of the Latin American Collaborative Study of Congenital Malformations was conducted during 20 months in a medium complexity hospital and a high complexity hospital. During the study period, 7,140 births were attended of which 225 had at least one birth defect. The prevalence of these was of 1.7% (IC95% 1.3-2.0) and 7.4% (IC95% 6.2-8.7) for the medium complexity hospital and the high complexity hospital, respectively. The highest frequencies for the high complexity care center were: ventricular septal defect, 10%; congenital hydronephrosis, 7%; abdominal wall defects, 6%, and hydrocephalus, 5%, while for the medium complexity were: polydactyly, 15%; preauricular skin tags, 8%; congenital talipes equino varus, 7%, and hemangioma, 6%. The prevalence of birth defects among different complexity care centers varies in quantity, type and severity of the anomaly diagnosed. The surveillance of birth defects is a useful tool for any level of care. It allows estimating more accurately the prevalence of the city, as well being a base for the planning and targeting of resources according to the prevalence of different congenital defects.

Repairing Nanoparticle Surface Defects.

Science.gov (United States)

Marino, Emanuele; Kodger, Thomas E; Crisp, Ryan W; Timmerman, Dolf; MacArthur, Katherine E; Heggen, Marc; Schall, Peter

2017-10-23

Solar devices based on semiconductor nanoparticles require the use of conductive ligands; however, replacing the native, insulating ligands with conductive metal chalcogenide complexes introduces structural defects within the crystalline nanostructure that act as traps for charge carriers. We utilized atomically thin semiconductor nanoplatelets as a convenient platform for studying, both microscopically and spectroscopically, the development of defects during ligand exchange with the conductive ligands Na 4 SnS 4 and (NH 4 ) 4 Sn 2 S 6 . These defects can be repaired via mild chemical or thermal routes, through the addition of L-type ligands or wet annealing, respectively. This results in a higher-quality, conductive, colloidally stable nanomaterial that may be used as the active film in optoelectronic devices. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

Defect formation and desorption of metal atoms from alkali halide crystals under low energy electron bombardment studied by optical absorption and mass spectroscopy

International Nuclear Information System (INIS)

Seifert, N.R.

1993-04-01

This work presents an extensive investigation of electronically induced desorption of ground-state alkali atoms from alkali halides and for the first time correlates directly the desorption with the stability and spatial distribution of the defects formed during bombardment. The electron impact results in the formation of stable F-centers and F-center clusters in the bulk of the crystals. In striking contrast a significant metallization of the surface is observed. Even at temperatures as low as 90 deg C the metallization is achieved within the time resolution of our detection system, which can only be explained by the rapid diffusion of hot holes. Superimposed to the fast and short diffusion of hot holes is the slow F-center diffusion. Measuring the distribution of defects with low energy ion sputtering techniques indicates that at least in the case of LiF the observed diffusion constant of F-centers agrees with values derived by using methods different from that applied here. At low temperatures the formation of F-center clusters and metal on the surface dominates. Colloid formation clearly requires higher temperatures (typically around 200 deg C). This is a strong evidence that efficient F-center diffusion is necessary for the formation of metallic particles (colloids) in the bulk of the crystals. Desorption of alkali atoms from alkali halides at temperatures around room temperature is due to weakly bound alkali atoms. For elevated temperatures the stability of the metallic clusters in the bulk of the crystals (i.e. colloids) are the rate limiting process. (author)

Formation and migration properties of the rare gases He, Ne, Ar, Ke, and Xe in nickel

International Nuclear Information System (INIS)

Melius, C.F.; Wilson, W.D.; Bisson, C.L.

1980-01-01

The energies of formation and migration of various rare gas-point defect complexes in an f.c.c. nickel lattice have been calculated for He, Ne, Ar, Kr, and Xe. Formation energies of rare gas atoms at interstitial sites are compared with those in substitutional sites. Binding energies are presented for self-interstitials and vacancies trapped to the various rare gas substitutionals. Migration energies and migration paths are also presented for various rare gas interstitials and substitutionals with and without trapped vacancies and self-interstitials. The migration energies are compared with the breakup energies for the corresponding complexes. It is found that divacancy-rare gas complexes are rather stable and will migrate at relatively low energies compared to other substitutional rare gas migration processes. (author)

Conformation-Directed Formation of Self-Healing Diblock Copolypeptide Hydrogels via Polyion Complexation.

Science.gov (United States)

Sun, Yintao; Wollenberg, Alexander L; O'Shea, Timothy Mark; Cui, Yanxiang; Zhou, Z Hong; Sofroniew, Michael V; Deming, Timothy J

2017-10-25

Synthetic diblock copolypeptides were designed to incorporate oppositely charged ionic segments that form β-sheet-structured hydrogel assemblies via polyion complexation when mixed in aqueous media. The observed chain conformation directed assembly was found to be required for efficient hydrogel formation and provided distinct and useful properties to these hydrogels, including self-healing after deformation, microporous architecture, and stability against dilution in aqueous media. While many promising self-assembled materials have been prepared using disordered or liquid coacervate polyion complex (PIC) assemblies, the use of ordered chain conformations in PIC assemblies to direct formation of new supramolecular morphologies is unprecedented. The promising attributes and unique features of the β-sheet-structured PIC hydrogels described here highlight the potential of harnessing conformational order derived from PIC assembly to create new supramolecular materials.

RIT1 controls actin dynamics via complex formation with RAC1/CDC42 and PAK1.

Directory of Open Access Journals (Sweden)

Uta Meyer Zum Büschenfelde

2018-05-01

Full Text Available RIT1 belongs to the RAS family of small GTPases. Germline and somatic RIT1 mutations have been identified in Noonan syndrome (NS and cancer, respectively. By using heterologous expression systems and purified recombinant proteins, we identified the p21-activated kinase 1 (PAK1 as novel direct effector of RIT1. We found RIT1 also to directly interact with the RHO GTPases CDC42 and RAC1, both of which are crucial regulators of actin dynamics upstream of PAK1. These interactions are independent of the guanine nucleotide bound to RIT1. Disease-causing RIT1 mutations enhance protein-protein interaction between RIT1 and PAK1, CDC42 or RAC1 and uncouple complex formation from serum and growth factors. We show that the RIT1-PAK1 complex regulates cytoskeletal rearrangements as expression of wild-type RIT1 and its mutant forms resulted in dissolution of stress fibers and reduction of mature paxillin-containing focal adhesions in COS7 cells. This effect was prevented by co-expression of RIT1 with dominant-negative CDC42 or RAC1 and kinase-dead PAK1. By using a transwell migration assay, we show that RIT1 wildtype and the disease-associated variants enhance cell motility. Our work demonstrates a new function for RIT1 in controlling actin dynamics via acting in a signaling module containing PAK1 and RAC1/CDC42, and highlights defects in cell adhesion and migration as possible disease mechanism underlying NS.

RIT1 controls actin dynamics via complex formation with RAC1/CDC42 and PAK1.

Science.gov (United States)

Meyer Zum Büschenfelde, Uta; Brandenstein, Laura Isabel; von Elsner, Leonie; Flato, Kristina; Holling, Tess; Zenker, Martin; Rosenberger, Georg; Kutsche, Kerstin

2018-05-01

RIT1 belongs to the RAS family of small GTPases. Germline and somatic RIT1 mutations have been identified in Noonan syndrome (NS) and cancer, respectively. By using heterologous expression systems and purified recombinant proteins, we identified the p21-activated kinase 1 (PAK1) as novel direct effector of RIT1. We found RIT1 also to directly interact with the RHO GTPases CDC42 and RAC1, both of which are crucial regulators of actin dynamics upstream of PAK1. These interactions are independent of the guanine nucleotide bound to RIT1. Disease-causing RIT1 mutations enhance protein-protein interaction between RIT1 and PAK1, CDC42 or RAC1 and uncouple complex formation from serum and growth factors. We show that the RIT1-PAK1 complex regulates cytoskeletal rearrangements as expression of wild-type RIT1 and its mutant forms resulted in dissolution of stress fibers and reduction of mature paxillin-containing focal adhesions in COS7 cells. This effect was prevented by co-expression of RIT1 with dominant-negative CDC42 or RAC1 and kinase-dead PAK1. By using a transwell migration assay, we show that RIT1 wildtype and the disease-associated variants enhance cell motility. Our work demonstrates a new function for RIT1 in controlling actin dynamics via acting in a signaling module containing PAK1 and RAC1/CDC42, and highlights defects in cell adhesion and migration as possible disease mechanism underlying NS.

Formation of Defect-Free Latex Films on Porous Fiber Supports

KAUST Repository

Lively, Ryan P.; Mysona, Joshua A.; Chance, Ronald R.; Koros, William J.

2011-01-01

a defect-free lumen-side barrier layer can be created. Film experiments examined the effect of drying rate, latex age, substrate porosity (porous vs nonporous), and substrate hydrophobicity/ hydrophilicity. Film studies show that in ideal conditions

Influence of cover defects on the attenuation of radon with earthen covers

International Nuclear Information System (INIS)

Kalkwarf, D.R.; Mayer, D.W.

1983-11-01

Experimental and theoretical evaluations of radon flux through laboratory-scale defective soil columns are presented together with a survey of literature on the formation and prevention of defects in soil covers. This report focuses on air-filled, centimeter-scale defects that are most probable in earthen covers for attenuating radon emission from uranium-mill tailings. Examples include shirnkage and erosion cracks, erosion piping, animal burrows and air channels formed by the biodegradation of vegetation roots. Calculations based on mathematical models indicate that collections of defects which could increase the radon flux from an earthen cover by a factor of two would be easily detected by visual inspection. However, these models ignore air-turbulence in the defect and drying of the soil around the defect. Laboratory measurements showed that turbulent diffusion of radon occurred through defects as narrow as 0.3 cm when subjected to a transverse air velocity of 1 to 6 miles per hour at the surface. Both turbulence and more-rapid drying of soil can accelerate radon flux to the cover surface. Consequently, recommended methods to inhibit defect formation should be applied. 29 references, 3 figures, 5 tables

Defect properties of CuCrO2: A density functional theory calculation

International Nuclear Information System (INIS)

Fang Zhi-Jie; Zhu Ji-Zhen; Zhou Jiang; Mo Man

2012-01-01

Using the first-principles methods, we study the formation energetics properties of intrinsic defects, and the charge doping properties of extrinsic defects in transparent conducting oxides CuCrO 2 . Intrinsic defects, some typical acceptor-type, and donor-type extrinsic defects in their relevant charge state are considered. By systematically calculating the formation energies and transition energy, the results of calculation show that, V Cu , O i , and O Cu are the relevant intrinsic defects in CuCrO 2 ; among these intrinsic defects, V Cu is the most efficient acceptor in CuCrO 2 . It is found that all the donor-type extrinsic defects have difficulty in inducing n-conductivity in CuCrO 2 because of their deep transition energy level. For all the acceptor-type extrinsic defects, substituting Mg for Cr is the most prominent doping acceptor with relative shallow transition energy levels in CuCrO 2 . Our calculation results are expected to be a guide for preparing promising n-type and p-type materials in CuCrO 2 . (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Defects in tor regulatory complexes retard aging and carbonyl/oxidative stress development in yeast Sассharomyces cerevisiae

Directory of Open Access Journals (Sweden)

B. V. Homza

2014-02-01

Full Text Available TOR signaling pathway first described in yeast S. сerevisiae is the highly conserved regulator of eukaryotic cell growth, aging and stress resistance. The effect of nitrogen sources, in particular amino acids, on the activity of TOR signaling pathway is well studied, however its relation to carbohydrates is poor understood. The aim of the present study is expanding of our understanding of potential role of TOR regulatory complexes in development of carbonyl/oxidative stress that can result from yeast cultivation on glucose and fructose. It has been shown that the level of α-dicarbonyl compounds and protein carbonyl groups increased with time of yeast cultivation and was higher in cells grown on fructose that demonstrated their accelerated aging and carbonyl/oxidative stress development as compared with cells grown on glucose. The strains defective in TOR proteins cultivated in the presence of glucose as well as fructose demonstrated lower markers of the stress and aging than parental strain. Thus these data confirmed the previous conclusion on fructose more potent ability to cause carbonyl/oxidative stress and accelerated aging in S. cerevisiae as compared with glucose. However, defects in TOR regulatory complexes retard aging and development of the stress in yeast independent on the type of carbohydrate in the cultivation medium.

On determination of enthalpies of complex formation reactions by means of temperature coefficient of complexing degree

International Nuclear Information System (INIS)

Povar, I.G.

1995-01-01

Equations describing the relation between temperature coefficient of ∂lnα/∂T complexing degree and the sum of changes in the enthalpy of complex formation of the composition M m L n δH mn multiplied by the weight coefficients k mm , are presented. A method to determine changes in the enthalpy of certain ΔH mm reactions from ∂lnα/∂T derivatives has been suggested. The best approximating equation from lnα/(T) dependence has been found. Errors of thus determined δH mm values are estimated and the results of calculation experiment for the system In 3+ -F - are provided. 10 refs., 2 figs., 3 tabs

A theoretical investigation of defects in a boron nitride monolayer

International Nuclear Information System (INIS)

Azevedo, Sergio; Kaschny, J R; Castilho, Caio M C de; Mota, F de Brito

2007-01-01

We have investigated, using first-principles calculations, the energetic stability and structural properties of antisites, vacancies and substitutional carbon defects in a boron nitride monolayer. We have found that the incorporation of a carbon atom substituting for one boron atom, in an N-rich growth condition, or a nitrogen atom, in a B-rich medium, lowers the formation energy, as compared to antisites and vacancy defects. We also verify that defects, inducing an excess of nitrogen or boron, such as N B and B N , are more stable in its reverse atmosphere, i.e. N B is more stable in a B-rich growth medium, while B N is more stable in a N-rich condition. In addition we have found that the formation energy of a C N , in a N-rich medium, and C B in a B-rich medium, present formation energies comparable to those of the vacancies, V N and V B , respectively

A study of the mechanisms causing surface defects on sidewalls during Si etching for TSV (through Si via)

International Nuclear Information System (INIS)

Choi, Jae Woong; Loh, Woon Leng; Praveen, Sampath Kumar; Murphy, Ramana; Swee, Eugene Tan Kiat

2013-01-01

In this paper we report three mechanisms causing surface defects on Si sidewalls during Si etching for TSV. The first mechanism causing surface defects was a downward surface-defect formation due to the participation of the residual polymerizing gas in the transition periods between passivation steps and etch steps. The second mechanism was an upward surface-defect formation due to etchant attacking the interface between the Si and the sidewall polymer. Although the sidewall polymer was thick enough to protect the Si surface, it was not possible to avoid surface defects if the etch step was not switched to the following passivation step in time. The third mechanism was a sponge-like surface-defect formation caused by either poor polymer depositions or voids inside the sidewall polymer. The sponge-like surface defects were formed by Si isotropic etching through the weak points of the sidewall polymer. All three surface defects were considered as the major factors on TSV integration and packaging reliability issues. (paper)

Bone formation in mono cortical mandibular critical size defects after augmentation with two synthetic nanostructured and one xenogenous hydroxyapatite bone substitute - in vivo animal study.

Science.gov (United States)

Dau, Michael; Kämmerer, Peer W; Henkel, Kai-Olaf; Gerber, Thomas; Frerich, Bernhard; Gundlach, Karsten K H

2016-05-01

Healing characteristics as well as level of tissue integration and degradation of two different nanostructured hydroxyapatite bone substitute materials (BSM) in comparison with a deproteinized hydroxyapatite bovine BSM were evaluated in an in vivo animal experiment. In the posterior mandible of 18 minipigs, bilateral mono cortical critical size bone defects were created. Randomized augmentation procedures with NanoBone(®) (NHA1), Ostim(®) (NHA2) or Bio-Oss(®) (DBBM) were conducted (each material n = 12). Samples were analyzed after five (each material n = 6) and 8 months (each material n = 6). Defect healing, formation of soft tissue and bone as well as the amount of remaining respective BSM were quantified both macro- and microscopically. For NHA2, the residual bone defect after 5 weeks was significantly less compared to NHA1 or DBBM. There was no difference in residual BSM between NHA1 and DBBM, but the amount in NHA2 was significantly lower. NHA2 also showed the least amount of soft tissue and the highest amount of new bone after 5 weeks. Eight months after implantation, no significant differences in the amount of residual bone defects, in soft tissue or in bone formation were detected between the groups. Again, NHA2 showed significant less residual material than NHA1 and DBBM. We observed non-significant differences in the biological hard tissue response of NHA1 and DBBM. The water-soluble NHA2 initially induced an increased amount of new bone but was highly compressed which may have a negative effect in less stable augmentations of the jaw. © 2015 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Spectral dependence of point defect production by x rays in RbBr

International Nuclear Information System (INIS)

Brown, F.C.; Heald, S.M.; Jiang, D.; Brewe, D.L.; Kim, K.H.; Stern, E.A.

1999-01-01

F-center formation by monochromatic x rays has been studied above and below the bromine and rubidium K-absorption edges in crystals of RbBr. The x-ray beam from a double silicon crystal monochromator on an undulator at the Advanced Photon Source was used to produce these point defects, which were detected by a sensitive laser-induced luminescence method. Experiments were carried out over a wide range of monochromatic x-ray intensity, with emphasis on the nearly linear initial slope of defect formation with exposure. No significant increase in F-center formation efficiency was found upon crossing the bromine K edge, which indicates that additional Auger-cascade mechanisms do not appreciably add to the usual multiple ionization electron-hole recombination processes known to generate point defects. copyright 1999 The American Physical Society

The ribosome-associated complex antagonizes prion formation in yeast.

Science.gov (United States)

Amor, Alvaro J; Castanzo, Dominic T; Delany, Sean P; Selechnik, Daniel M; van Ooy, Alex; Cameron, Dale M

2015-01-01

The number of known fungal proteins capable of switching between alternative stable conformations is steadily increasing, suggesting that a prion-like mechanism may be broadly utilized as a means to propagate altered cellular states. To gain insight into the mechanisms by which cells regulate prion formation and toxicity we examined the role of the yeast ribosome-associated complex (RAC) in modulating both the formation of the [PSI(+)] prion - an alternative conformer of Sup35 protein - and the toxicity of aggregation-prone polypeptides. The Hsp40 RAC chaperone Zuo1 anchors the RAC to ribosomes and stimulates the ATPase activity of the Hsp70 chaperone Ssb. We found that cells lacking Zuo1 are sensitive to over-expression of some aggregation-prone proteins, including the Sup35 prion domain, suggesting that co-translational protein misfolding increases in Δzuo1 strains. Consistent with this finding, Δzuo1 cells exhibit higher frequencies of spontaneous and induced prion formation. Cells expressing mutant forms of Zuo1 lacking either a C-terminal charged region required for ribosome association, or the J-domain responsible for Ssb ATPase stimulation, exhibit similarly high frequencies of prion formation. Our findings are consistent with a role for the RAC in chaperoning nascent Sup35 to regulate folding of the N-terminal prion domain as it emerges from the ribosome.

Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy

International Nuclear Information System (INIS)

Hulluvarad, Shiva S.; Naddaf, M.; Bhoraskar, S.V.

2001-01-01

The influence of intentional introduction of oxygen, at the surface of GaAs, on its native surface states was studied. Oxygen was made to interact with the surface of GaAs by three different means: (1) by growing native oxides, (2) exposing to oxygen plasma in an electron cyclotron resonance (ECR) plasma reactor and by (3) high energy oxygen ion irradiation. Thermally stimulated exo-electron emission (TSEE) spectroscopy was used to estimate the relative densities and energies of the surface states induced by the three different modes of introducing oxygen. Out of the two native defect levels found in GaAs by TSEE; at 325 K (0.7 eV below E c ) and at 415 K (0.9 below E c ); the former is seen to get broadened or split into multiple peaks in each of the methods. Multiple peaks in TSEE signify the presence of a closely spaced band of defect levels. Therefore the results exclusively point out that oxygen-related complexes contribute to the formation of a band of defects centered at 325 K in TSEE which is correlated to an energy level 0.7 eV below E c known as the EL2 defect level. The results reported in this paper thus confirm that the TSEE peak at 0.7 eV below E c is related to oxygen induced defects whereas the peak at 0.9 eV is not affected by the presence of oxygen-related species

Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy

Science.gov (United States)

Hulluvarad, Shiva S.; Naddaf, M.; Bhoraskar, S. V.

2001-10-01

The influence of intentional introduction of oxygen, at the surface of GaAs, on its native surface states was studied. Oxygen was made to interact with the surface of GaAs by three different means: (1) by growing native oxides, (2) exposing to oxygen plasma in an electron cyclotron resonance (ECR) plasma reactor and by (3) high energy oxygen ion irradiation. Thermally stimulated exo-electron emission (TSEE) spectroscopy was used to estimate the relative densities and energies of the surface states induced by the three different modes of introducing oxygen. Out of the two native defect levels found in GaAs by TSEE; at 325 K (0.7 eV below Ec) and at 415 K (0.9 below Ec); the former is seen to get broadened or split into multiple peaks in each of the methods. Multiple peaks in TSEE signify the presence of a closely spaced band of defect levels. Therefore the results exclusively point out that oxygen-related complexes contribute to the formation of a band of defects centered at 325 K in TSEE which is correlated to an energy level 0.7 eV below Ec known as the EL2 defect level. The results reported in this paper thus confirm that the TSEE peak at 0.7 eV below Ec is related to oxygen induced defects whereas the peak at 0.9 eV is not affected by the presence of oxygen-related species.

Detection of oxygen-related defects in GaAs by exo-electron emission spectroscopy

International Nuclear Information System (INIS)

Hulluvarad, Shiva S.; Naddaf, M.; Bhoraskar, S.V.

2004-01-01

The influence of intentional introduction of oxygen, at the surface of GaAs, on its native surface states was studied. Oxygen was made to interact with the surface of GaAs by three different means: (1) by growing native oxides, (2) exposing to oxygen plasma in an electron cyclotron resonance (ECR) plasma reactor and by (3) high energy oxygen ion irradiation. Thermally stimulated exo-electron emission (TSEE) spectroscopy was used to estimate the relative densities and energies of the surface states induced by the three different modes of introducing oxygen. Out of the two native defect levels found in GaAs by TSEE; at 325 K (0.7 eV below E c ) and at 415 K (0.9 below E c ); the former is seen to get broadened or split into multiple peaks in each of the methods. Multiple peaks in TSEE signify the presence of a closely spaced band of defect levels. Therefore the results exclusively point out that oxygen-related complexes contribute to the formation of a band of defects centered at 325 K in TSEE which is correlated to an energy level 0.7 eV below E c known as the EL2 defect level. The results reported in this paper thus confirm that the TSEE peak at 0.7 eV below E c is related to oxygen induced defects whereas the peak at 0.9 eV is not affected by the presence of oxygen-related species. (author)

Formation of nitridotechnetium(VI) μ-oxo dimer complexes with EDTA and EDDA

International Nuclear Information System (INIS)

Takayama, T.; Kani, Y.; Sekine, T.; Kudo, H.; Yoshihara, K.

1995-01-01

Reactions of [ 99 TcNCl 4 ] - with ethylenediaminetetraacetic acid 4 (ETDA) and ethylenediamine-N,N'-diacetic acid (EDDA) in a mixture of water and acetone gave Tc VI N-EDTA and Tc VI N-EDTA complexes. The infrared spectra of both reaction products showed the existence of the Tc≡N and C=O groups. The elemental analysis indicated the 1:1 TcN-ligand ratio in the EDTA and EDDA complexes. Electrophoresis showed that the Tc VI -EDTA complex was an anionic species in a perchlorate solution. For the Tc VI N-EDDA complex, neutral and anionic species were formed, depending on the pH of the solution. Formation of the μ-oxo dimer complexes was suggested from the UV-Vis absorption spectra. (author) 11 refs.; 4 figs.; 1 tab

Defect formation in fluoropolymer films at their condensation from a gas phase

Science.gov (United States)

Luchnikov, P. A.

2018-01-01

The questions of radiation defects, factors of influence of electronic high-frequency discharge plasma components on the molecular structure and properties of the fluoropolymer vacuum films synthesized on a substrate from a gas phase are considered. It is established that at sedimentation of fluoropolymer coverings from a gas phase in high-frequency discharge plasma in films there are radiation defects in molecular and supramolecular structure because of the influence of active plasma components which significantly influence their main properties.

Interdisciplinary Management of an Isolated Intrabony Defect

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Sheetal Ghivari

2014-01-01

Full Text Available The treatment of intrabony defects is a real challenge in molar teeth as it is chronic, slowly progressing disease which needs timely intervention. Periodontal inflammation associated with intrabony defect is not a separate entity as it secondarily affects the pulp causing retrograde pulpitis. However, treatment of these lesions will be complicated due to extensive bone loss. The tooth was endodontically treated followed by periodontal surgery to eliminate the deep periodontal pocket and promote bone fill in osseous defect. PepGen P-15 composited with platelet rich plasma was utilized for enhancing bone formation. The combination of these graft materials provides synergistic effect on bone regeneration.

Point defects and oxidation mechanism in cubic boron nitride

International Nuclear Information System (INIS)

Gorshin, A.P.; Shvajko-Shvajkovskij, V.E.

1994-01-01

A theoretical analysis of the defect formation in boron nitride by the Schottky mechanism within the framework of the quasi-chemical approximation method is carried out. On the base of solution of the disordering equations at different conditions of electroneutrality are obtained the dependences of defect concentrations in β-BN on the partial nitrogen pressure in equilibrium conditions. Experimental checking of the theoretical analysis proposed confirms the hypothesis on the presence of defects of nonstoichiometric origin in the β-BN anion sublattice

Evaluation of autogenous PRGF+β-TCP with or without a collagen membrane on bone formation and implant osseointegration in large size bone defects. A preclinical in vivo study.

Science.gov (United States)

Batas, Leonidas; Stavropoulos, Andreas; Papadimitriou, Serafim; Nyengaard, Jens R; Konstantinidis, Antonios

2016-08-01

The aim of this study was to evaluate whether the adjunctive use of a collagen membrane enhances bone formation and implant osseointegration in non-contained defects grafted with chair-side prepared autologous platelet-rich growth factor (PRGF) adsorbed on a β-TCP particulate carrier. Large box-type defects (10 × 6 mm; W × D) were prepared in the edentulated and completely healed mandibles of six Beagles dogs. An implant with moderately rough surface was placed in the center of each defect leaving the coronal 6 mm of the implant not covered with bone. The remaining defect space was then filled out with chair-side prepared autologous PRGF adsorbed on β-TCP particles and either covered with a collagen membrane (PRGF/β-TCP+CM) (6 defects) or left without a membrane (PRGF/β-TCP) (5 defects). Histology 4 months post-op showed new lamellar and woven bone formation encompassing almost entirely the defect and limited residual β-TCP particles. Extent of osseointegration of the previously exposed portion of the implants varied, but in general was limited. Within the defect, new mineralized bone (%) averaged 43.2 ± 9.86 vs. 39.9 ± 13.7 in the PRGF/β-TCP+CM and PRGF/β-TCP group (P = 0.22) and relative mineralized bone-to-implant contact (%) averaged 26.2 ± 16.45 vs. 35.91 ± 24.45, respectively (P = 0.5). First, bone-to-implant contact from the implant top was 4.1 ± 1.5 and 3.2 ± 2.3 (P = 0.9), in the PRGF/β-TCP+CM and PRGF/β-TCP group, respectively. Implantation of chair-side prepared autologous PRGF adsorbed on a β-TCP carrier in non-contained peri-implant defects resulted in large amounts of bone regeneration, but osseointegration was limited. Provisions for GBR with a collagen membrane did not significantly enhance bone regeneration or implant osseointegration. © 2015 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Theoretical predictions of hydrolysis and complex formation of group-4 elements Zr, Hf and Rf in HF and HCl solutions

International Nuclear Information System (INIS)

Pershina, V.; Trubert, D.; Le Naour, C.; Kratz, J.V.

2002-01-01

Fully relativistic molecular density-functional calculations of the electronic structures of hydrated, hydrolyzed and fluoride/chloride complexes have been performed for group-4 elements Zr, Hf, and element 104, Rf. Using the electronic density distribution data, relative values of the free energy change for hydrolysis and complex formation reactions were defined. The results show the following trend for the first hydrolysis step of the cationic species: Zr>Hf>Rf in agreement with experiments. For the complex formation in HF solutions, the trend to a decrease from Zr to Hf is continued with Rf, provided no hydrolysis takes place. At pH>0, further fluorination of hydrolyzed species or fluoro-complexes has an inversed trend in the group Rf≥Zr>Hf, with the difference between the elements being very small. For the complex formation in HCl solutions, the trend is continued with Rf, so that Zr>Hf>Rf independently of pH. A decisive energetic factor in hydrolysis or complex formation processes proved to be a predominant electrostatic metal-ligand interaction. Trends in the K d (distribution coefficient) values for the group-4 elements are expected to follow those of the complex formation

Thermodynamics of mixed-ligand complex formation of mercury (II) ethylenediaminetetraacetate with amino acids in solution

Energy Technology Data Exchange (ETDEWEB)

Pyreu, Dmitrii, E-mail: pyreu@mail.ru [Department of Inorganic and Analytic Chemistry, Ivanovo State University, Ermak 39, Ivanovo 153025 (Russian Federation); Kozlovskii, Eugenii [Department of Inorganic and Analytic Chemistry, Ivanovo State University, Ermak 39, Ivanovo 153025 (Russian Federation); Gruzdev, Matvei; Kumeev, Roman [Institute of Solution Chemistry, Ivanovo (Russian Federation)

2012-11-20

Highlights: Black-Right-Pointing-Pointer Stable mixed ligand complexes of HgEdta with amino acids at physiological pH value. Black-Right-Pointing-Pointer The thermodynamic and NMR data evident the ambidentate coordination mode of arginine. Black-Right-Pointing-Pointer Participation of the guanidinic group of Arg in coordination process. Black-Right-Pointing-Pointer Binuclear complexes (HgEdta){sub 2}L with the bridging function of amino acid. - Abstract: The mixed-ligand complex formation in the systems Hg{sup 2+} - Edta{sup 4-} - L{sup -}(L = Arg, Orn, Ser) has been studied by means of calorimetry, pH-potentiometry and NMR spectroscopy in aqueous solution at 298.15 K and the ionic strength of I = 0.5 (KNO{sub 3}). The thermodynamic parameters of formation of the HgEdtaL, HgEdtaHL and (HgEdta){sub 2}L complexes have been determined. The most probable coordination mode for the complexone and the amino acid in the mixed-ligand complexes was discussed.

Study of Te Inclusion and Related Point Defects in THM-Growth CdMnTe Crystal

Science.gov (United States)

Mao, Yifei; Zhang, Jijun; Min, Jiahua; Liang, Xiaoyan; Huang, Jian; Tang, Ke; Ling, Liwen; Li, Ming; Zhang, Ying; Wang, Linjun

2018-02-01

This study establishes a model for describing the interaction between Te inclusions, dislocations and point defects in CdMnTe crystals. The role of the complex environment surrounding the formation of Te inclusions was analyzed. Images of Te inclusions captured by scanning electron microscope and infrared microscope were used to observe the morphology of Te inclusions. The morphology of Te inclusions is discussed in light of crystallography, from the crystal growth temperature at 900°C to the melting temperature of Te inclusions using the traveling heater method. The dislocation nets around Te inclusions were calculated by counting lattice mismatches between the Te inclusions and the bulk CdMnTe at 470°C. The point defects of Te antisites were found to be gathered around Te inclusions, with dislocation climb during the cooling phase of crystal growth from 470°C to room temperature. The Te inclusions, dislocation nets and surrounding point defects are considered to be an entirety for evaluating the effect of Te inclusions on CdMnTe detector performance, and an effective mobility-lifetime product (μτ) was obtained.

Prevention of Bone Bridge Formation Using Transplantation of the Autogenous Mesenchymal Stem Cells to Physeal Defects: An Experimental Study in Rabbits

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L. Plánka

2007-01-01

Full Text Available Physeal cartilage is known to have poor self-repair capacity after injury. Evaluation of the ability of cultured mesenchymal stem cells to repair damaged physis is the topic of current research. In 10 immature New Zealand white rabbits autogenous mesenchymal stem cells were transplanted into a iatrogenic physeal defect in a lateral portion of the distal growth plate of the right femur. The same defect without stem cells transplantation in the left femoral distal physis served as a control. In our study, we used our own technique of implantation of MSCs with a newly modified gel scaffold (New Composite Hyaluronate/Collagen Type I/Fibrin Scaffold. The rabbits were euthanized 4 months after transplantation. Bone length discrepancy and valgus deformity were measured from femoral radiographs. Healing of the defect was investigated histologically. The ability of mesenchymal stem cells to survive and promote cartilage healing in the physeal defect was assessed by immunofluorescence. Average difference in femur length measured from surgery to euthanasia (4 months was 0.61 ± 0.19 cm after preventive transplantation of MSCs in the right femur, but only 0.11 ± 0.07 cm in the left femur. Average angular (valgus deformity of the right femur with MSCs preventively transplanted to iatrogenically damaged distal femoral physis was 1.2 ± 0.72 °. Valgus deformity in the left femur was 5.4 ± 2.5 °. Prophylactic transplantation of autogenous mesenchymal stem cells to iatrogenically damaged distal growth plate of the rabbit femur prevented a bone bridge formation and resulted in healing of the physeal defect with hyaline cartilage. Immunofluorescence examination showed that the chondrocytes newly formed in growth zone are the result of implanted MSCs differentiation. Femur growth in traumatized physis was maintained even after transplantation of autogenous MSCs. As compared with the opposite femur (with physeal defect but without transplanted MSCs, the bone

Tri-layered composite plug for the repair of osteochondral defects: in vivo study in sheep

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Altug Yucekul

2017-04-01

Full Text Available Cartilage defects are a source of pain, immobility, and reduced quality of life for patients who have acquired these defects through injury, wear, or disease. The avascular nature of cartilage tissue adds to the complexity of cartilage tissue repair or regeneration efforts. The known limitations of using autografts, allografts, or xenografts further add to this complexity. Autologous chondrocyte implantation or matrix-assisted chondrocyte implantation techniques attempt to introduce cultured cartilage cells to defect areas in the patient, but clinical success with these are impeded by the avascularity of cartilage tissue. Biodegradable, synthetic scaffolds capable of supporting local cells and overcoming the issue of poor vascularization would bypass the issues of current cartilage treatment options. In this study, we propose a biodegradable, tri-layered (poly(glycolic acid mesh/poly(l-lactic acid-colorant tidemark layer/collagen Type I and ceramic microparticle-coated poly(l-lactic acid-poly(ϵ-caprolactone monolith osteochondral plug indicated for the repair of cartilage defects. The porous plug allows the continual transport of bone marrow constituents from the subchondral layer to the cartilage defect site for a more effective repair of the area. Assessment of the in vivo performance of the implant was conducted in an ovine model (n = 13. In addition to a control group (no implant, one group received the implant alone (Group A, while another group was supplemented with hyaluronic acid (0.8 mL at 10 mg/mL solution; Group B. Analyses performed on specimens from the in vivo study revealed that the implant achieves cartilage formation within 6 months. No adverse tissue reactions or other complications were reported. Our findings indicate that the porous biocompatible implant seems to be a promising treatment option for the cartilage repair.

Hydrostatic pressure effects on oxygen-related irradiation-produced defects in silicon

International Nuclear Information System (INIS)

Stein, H.J.; Samara, G.A.

1989-01-01

Hydrostatic pressure has been used to investigate the E c -0.164 eV acceptor level for the oxygen-vacancy (O-V) defect in γ-ray irradiated Si, and the annealing/formation of oxygen-related defects in neutron-irradiated Si. The acceptor level is found to move closer to the conduction band and away from the valence band. There is also a relatively large inward (outward) breathing mode lattice relaxation accompanying electron emission (capture) from this level. Both results reflect the antibonding nature of the level and are qualitatively consistent with the Watkins-Corbett model for the O-V defect. The annealing rate was found to increase with pressure for the O-V defect at 350 0 C with a derived activation volume of -4.5A 3 /defect, where the negative sign implies inward relaxation (contraction) on annealing. Pressure has relatively little effect on annealing of the C-Si-O C(3) defect which is interstitial in nature, but strongly favors the formation of the dioxygen defect. The intensity of the O 2 -V band after annealing at 20 kbar is 5 times higher than that following similar annealing at 0 kbar. This intensity is higher than that achievable by any isochronal or isothermal annealing steps at 0 kbar. These results are discussed qualitatively in terms of models for the various defects. (author)

Quantum-chemical analysis of formation reactions of Со2+ complexes

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Viktor F. Vargalyuk

2017-11-01

Full Text Available Based on the analysis of quantum chemical calculations results (GAMESS, density functional theory, B3LYP method as to coordination compounds of Co2+ions with H2O, NH3, OH–, F–, Cl–, Br–, I–, CN–, Ac–, Ak– generally given by [Co(H2O6–nLn]2+nx, it has been demonstrated that within the selected series of ligands, there is no correlation between the amount of energy of monosubstituted cobalt aqua complexes formation(∆Е and pK1,just like between the effective nuclear charge of the central atom (z*Со and pK1. According to the behavior of ∆Е and z*Со,we identified two groups of ligands. The first group (OH–, F–, Ac–, Ak–, CN–, NH3 demonstrates logical ∆Е decrease caused by the growth of z*Со. On the contrary, the second group (Cl–, Br–, I– demonstrates ∆Е increase caused by the growth of z*Со. This phenomenon is explained by the change in electronegativity and polarizability of donor atoms in groups and periods of the periodic table. It is established that linear correlations given by lgK = A + B·z*Со can be actualized only for complexes having ligands with similar donor atoms. Referring to the literature on stepwise complex formation of hydroxide, amine and chloride cobalt complexes in combination with z*Со calculations results, we determined A and B constants of lgK, z*Со-correlations for the atoms of oxygen (30.2, –17.7; nitrogen (125.4, –69.9 and chlorine (–6.3, 5.8. The existence of the detected correlation series enables us to lean on lgK,z*М–dependence parameters for the fixed donor atom and to determine Kn values for various complexes with complex-based ligands using calculations and z*М data. This applies to complexes having central atoms of the same nature as well as simple monodentate ligands. The mentioned approach was used to calculate the stability constants for acrylate cobalt complexes (lgK1 = 1.2 и lgК2 = 4.3, which are not covered in literature.

Response of induced bone defects in horses to collagen matrix containing the human parathyroid hormone gene.

Science.gov (United States)

Backstrom, Kristin C; Bertone, Alicia L; Wisner, Erik R; Weisbrode, Stephen E

2004-09-01

To determine whether human parathyroid hormone (hPTH) gene in collagen matrix could safely promote bone formation in diaphyseal or subchondral bones of horses. 8 clinically normal adult horses. Amount, rate, and quality of bone healing for 13 weeks were determined by use of radiography, quantitative computed tomography, and histomorphometric analysis. Diaphyseal cortex and subchondral bone defects of metacarpi were filled with hPTH(1-34) gene-activated matrix (GAM) or remained untreated. Joints were assessed on the basis of circumference, synovial fluid analysis, pain on flexion, lameness, and gross and histologic examination. Bone volume index was greater for cortical defects treated with hPTH(1-34) GAM, compared with untreated defects. Bone production in cortical defects treated with hPTH(1-34) GAM positively correlated with native bone formation in untreated defects. In contrast, less bone was detected in hPTH(1-34) GAM-treated subchondral bone defects, compared with untreated defects, and histology confirmed poorer healing and residual collagen sponge. Use of hPTH(1-34) GAM induced greater total bone, specifically periosteal bone, after 13 weeks of healing in cortical defects of horses. The hPTH(1-34) GAM impeded healing of subchondral bone but was biocompatible with joint tissues. Promotion of periosteal bone formation may be beneficial for healing of cortical fractures in horses, but the delay in onset of bone formation may negate benefits. The hPTH(1-34) GAM used in this study should not be placed in articular subchondral bone defects, but contact with articular surfaces is unlikely to cause short-term adverse effects.

Extended defects and hydrogen interactions in ion implanted silicon

Science.gov (United States)

Rangan, Sanjay

The structural and electrical properties of extended defects generated because of ion implantation and the interaction of hydrogen with these defects have been studied in this work. Two distinct themes have been studied, the first where defects are a detrimental and the second where they are useful. In the first scenario, transient enhanced diffusion of boron has been studied and correlated with defect evolution studies due to silicon and argon ion implants. Spreading resistance profiles (SRP) correlated with deep level transient spectroscopy (DLTS) measurements, reveal that a low anneal temperatures (TED at low anneal temperatures (550°C, the effect of hydrogen is lost, due to its out-diffusion. Moreover, due to catastrophic out-diffusion of hydrogen, additional damage is created resulting in deeper junctions in hydrogenated samples, compared to the non-hydrogenated ones. Comparing defect evolution due to Si and Ar ion implants at different anneal temperatures, while the type of defects is the same in the two cases, their (defect) dissolution occurs at lower anneal temperatures (˜850°C) for Si implants. Dissolution for Ar implants seems to occur at higher anneal temperatures. The difference has been attributed to the increased number of vacancies created by Ar to that of silicon implant. In second aspect, nano-cavity formation due to vacancy agglomeration has been studied by helium ion implantation and furnace anneal, where the effect of He dose, implant energy and anneal time have been processing parameters that have been varied. Cavities are formed only when the localized concentration of He is greater than 3 x 1020 cm-3. While at high implant doses, a continuous cavity layer is formed, at low implant doses a discontinuous layer is observed. The formation of cavities at low doses has been observed for the first time. Variation of anneal times reveal that cavities are initially facetted (for short anneal times) and tend to become spherical when annealed for

A new fundamental hydrogen defect in alkali halides

International Nuclear Information System (INIS)

Morato, S.P.; Luety, F.

1978-01-01

Atom hydrogen in neutral (H 0 ) and negative (H - ) form on substitutional and interstitial lattice sites gives rise to well characterized model defects in alkali-halides (U,U 1 ,U 2 ,U 3 centers), which have been extensively investigated in the past. When studying the photo-decomposition of OH - defects, a new configuration of atomic charged hidrogen was discovered, which can be produced in large quantities in the crystal and is apparently not connected to any other impurity. This new hidrogen defect does not show any pronounced electronic absorption, but displays a single sharp local mode band (at 1114cm -1 in KCl) with a perfect isotope shift. The defect can be produced by various UV or X-ray techniques in crystais doped with OH - , Sh - or H - defects. A detailed study of its formation kinetics at low temperature shows that it is primarily formed by the reaction of a mobile CI 2 - crowdion (H-center) with hidrogen defects [pt

Polysaccharide charge density regulating protein adsorption to air/water interfaces by protein/polysaccharide complex formation

NARCIS (Netherlands)

Ganzevles, R.A.; Kosters, H.; Vliet, T. van; Stuart, M.A.C.; Jongh, H.H.J. de

2007-01-01

Because the formation of protein/polysaccharide complexes is dominated by electrostatic interaction, polysaccharide charge density is expected to play a major role in the adsorption behavior of the complexes. In this study, pullulan (a non-charged polysaccharide) carboxylated to four different

Primary cellular meningeal defects cause neocortical dysplasia and dyslamination

Science.gov (United States)

Hecht, Jonathan H.; Siegenthaler, Julie A.; Patterson, Katelin P.; Pleasure, Samuel J.

2010-01-01

Objective Cortical malformations are important causes of neurological morbidity, but in many cases their etiology is poorly understood. Mice with Foxc1 mutations have cellular defects in meningeal development. We use hypomorphic and null alleles of Foxc1 to study the effect of meningeal defects on neocortical organization. Methods Embryos with loss of Foxc1 activity were generated using the hypomorphic Foxc1hith allele and the null Foxc1lacZ allele. Immunohistologic analysis was used to assess cerebral basement membrane integrity, marginal zone heterotopia formation, neuronal overmigration, meningeal defects, and changes in basement membrane composition. Dysplasia severity was quantified using two measures. Results Cortical dysplasia resembling cobblestone cortex, with basement membrane breakdown and lamination defects, is seen in Foxc1 mutants. As Foxc1 activity was reduced, abnormalities in basement membrane integrity, heterotopia formation, neuronal overmigration, and meningeal development appeared earlier in gestation and were more severe. Surprisingly, the basement membrane appeared intact at early stages of development in the face of severe deficits in meningeal development. Prominent defects in basement membrane integrity appeared as development proceeded. Molecular analysis of basement membrane laminin subunits demonstrated that loss of the meninges led to changes in basement membrane composition. Interpretation Cortical dysplasia can be caused by cellular defects in the meninges. The meninges are not required for basement membrane establishment but are needed for remodeling as the brain expands. Specific changes in basement membrane composition may contribute to subsequent breakdown. Our study raises the possibility that primary meningeal defects may cortical dysplasia in some cases. PMID:20976766

Dislocation defect interaction in irradiated Cu

International Nuclear Information System (INIS)

Schaeublin, R.; Yao, Z.; Spaetig, P.; Victoria, M.

2005-01-01

Pure Cu single crystals irradiated at room temperature to low doses with 590 MeV protons have been deformed in situ in a transmission electron microscope in order to identify the basic mechanisms at the origin of hardening. Cu irradiated to 10 -4 dpa shows at room temperature a yield shear stress of 13.7 MPa to be compared to the 8.8 MPa of the unirradiated Cu. Irradiation induced damage consists at 90% of 2 nm stacking fault tetrahedra, the remaining being dislocation loops and unidentified defects. In-situ deformation reveals that dislocation-defect interaction can take several forms. Usually, dislocations pinned by defects bow out under the applied stress and escape without leaving any visible defect. From the escape angles obtained at 183 K, an average critical stress of 100 MPa is deduced. In some cases, the pinning of dislocations leads to debris that are about 20 nm long, which formation could be recorded during the in situ experiment

Electronic structure of point defects in semiconductors

International Nuclear Information System (INIS)

Bruneval, Fabien

2014-01-01

This 'Habilitation a diriger des Recherches' memoir presents most of my scientific activities during the past 7 years, in the field of electronic structure calculations of defects in solids. Point defects (vacancies, interstitials, impurities) in functional materials are a key parameter to determine if these materials will actually fill the role they have been assigned or not. Indeed, the presence of defects cannot be avoided when the temperature is increased or when the material is subjected to external stresses, such as irradiation in the nuclear reactors and in artificial satellites with solar radiations. However, in many cases, defects are introduced in the materials on purpose to tune the electronic transport, optical or even magnetic properties. This procedure is called the doping of semiconductors, which is the foundation technique for transistors, diodes, or photovoltaic cells. However, doping is not always straightforward and unexpected features may occur, such as doping asymmetry or Fermi level pinning, which can only be explained by complex phenomena involving different types of defects or complexes of defects. In this context, the calculations of electronic structure ab initio is an ideal tool to complement the experimental observations, to gain the understanding of phenomena at the atomic level, and even to predict the properties of defects. The power of the ab initio calculations comes from their ability to describe any system of electrons and nuclei without any specific adjustment. But although there is a strong need for numerical simulations in this field, the ab initio calculations for defects are still under development as of today. The work presented in this memoir summarizes my contributions to methodological developments on this subject. These developments have followed two main tracks. The first topic is the better understanding of the unavoidable finite size effects. Indeed, defects in semiconductors or insulators are generally present in

Observation and analysis of defect cluster production and interactions with dislocations

International Nuclear Information System (INIS)

Zinkle, S.J.; Matsukawa, Y.

2004-01-01

The current understanding of defect production fundamentals in neutron-irradiated face centered cubic (FCC) and body centered cubic (BCC) metals is briefly reviewed, based primarily on transmission electron microscope observations. Experimental procedures developed by Michio Kiritani and colleagues have been applied to quantify defect cluster size, density, and nature. Differences in defect accumulation behavior of irradiated BCC and FCC metals are discussed. Depending on the defect cluster obstacle strength, either the dispersed barrier hardening model or the Friedel-Kroupa-Hirsch weak barrier model can be used to describe major aspects of radiation hardening. Irradiation at low temperature can cause a change in deformation mode from dislocation cell formation at low doses to twinning or dislocation channeling at higher doses. The detailed interaction between dislocations and defect clusters helps determine the dominant deformation mode. Recent observations of the microstructure created by plastic deformation of quenched and irradiated metals are summarized, including in situ deformation results. Examples of annihilation of stacking fault tetrahedra by gliding dislocations and subsequent formation of mobile superjogs are shown

A lightning strike to the head causing a visual cortex defect with simple and complex visual hallucinations

Science.gov (United States)

Kleiter, Ingo; Luerding, Ralf; Diendorfer, Gerhard; Rek, Helga; Bogdahn, Ulrich; Schalke, Berthold

2009-01-01

The case of a 23-year-old mountaineer who was hit by a lightning strike to the occiput causing a large central visual field defect and bilateral tympanic membrane ruptures is described. Owing to extreme agitation, the patient was sent into a drug-induced coma for 3 days. After extubation, she experienced simple and complex visual hallucinations for several days, but otherwise largely recovered. Neuropsychological tests revealed deficits in fast visual detection tasks and non-verbal learning and indicated a right temporal lobe dysfunction, consistent with a right temporal focus on electroencephalography. At 4 months after the accident, she developed a psychological reaction consisting of nightmares, with reappearance of the complex visual hallucinations and a depressive syndrome. Using the European Cooperation for Lightning Detection network, a meteorological system for lightning surveillance, the exact geographical location and nature of the lightning strike were retrospectively retraced PMID:21734915

From PII signaling to metabolite sensing: a novel 2-oxoglutarate sensor that details PII-NAGK complex formation.

Directory of Open Access Journals (Sweden)

Jan Lüddecke

Full Text Available The widespread PII signal transduction proteins are known for integrating signals of nitrogen and energy supply and regulating cellular behavior by interacting with a multitude of target proteins. The PII protein of the cyanobacterium Synechococcus elongatus forms complexes with the controlling enzyme of arginine synthesis, N-acetyl-L-glutamate kinase (NAGK in a 2-oxoglutarate- and ATP/ADP-dependent manner. Fusing NAGK and PII proteins to either CFP or YFP yielded a FRET sensor that specifically responded to 2-oxoglutarate. The impact of the fluorescent tags on PII and NAGK was evaluated by enzyme assays, surface plasmon resonance spectroscopy and isothermal calorimetric experiments. The developed FRET sensor provides real-time data on PII - NAGK interaction and its modulation by the effector molecules ATP, ADP and 2-oxoglutarate in vitro. Additionally to its utility to monitor 2-oxoglutarate levels, the FRET assay provided novel insights into PII - NAGK complex formation: (i It revealed the formation of an encounter-complex between PII and NAGK, which holds the proteins in proximity even in the presence of inhibitors of complex formation; (ii It revealed that the PII T-loop residue Ser49 is neither essential for complex formation with NAGK nor for activation of the enzyme but necessary to form a stable complex and efficiently relieve NAGK from arginine inhibition; (iii It showed that arginine stabilizes the NAGK hexamer and stimulates PII - NAGK interaction.

Human diseases associated with defective DNA repair

International Nuclear Information System (INIS)

Friedberg, E.C.; Ehmann, U.K.; Williams, J.I.

1979-01-01

The observations on xeroderma pigmentosum (XP) cells in culture were the first indications of defective DNA repair in association with human disease. Since then, a wealth of information on DNA repair in XP, and to a lesser extent in other diseases, has accumulated in the literature. Rather than clarifying the understanding of DNA repair mechanisms in normal cells and of defective DNA repair in human disease, the literature suggests an extraordinary complexity of both of the phenomena. In this review a number of discrete human diseases are considered separately. An attempt was made to systematically describe the pertinent clinical features and cellular and biochemical defects in these diseases, with an emphasis on defects in DNA metabolism, particularly DNA repair. Wherever possible observations have been correlated and unifying hypotheses presented concerning the nature of the basic defect(s) in these diseases. Discussions of the following diseases are presented: XP, ataxia telangiectasia; Fanconi's anemia; Hutchinson-Gilford progeria syndrome; Bloom's syndrome, Cockayne's syndrome; Down's syndrome; retinoblastoma; chronic lymphocytic leukemia; and other miscellaneous human diseases with possble DNA repair defects

Irradiation temperature dependence of defect formation of nitrides (A1N and c-BN) during neutron irradiations

International Nuclear Information System (INIS)

Atobe, Kozo.; Okada, Moritami; Nakagawa, Masuo

2000-01-01

The nitrogen vacancy concentration in the more refractory nitrides (A1N and c-BN) is determined as a function of reactor fluence up to 5.2x10 17 thermal neutrons/cm 2 and a function of the irradiation temperature at 25, 50, 100, 150, 200, 250 K. It is found that there is no remarkable dependence of the defect formation in nitrides on the irradiation temperature. The production of damage in the nitrides is considerably different from that in oxides. From the irradiation experiments using thermal neutron irradiation field, it is suggested in reactor irradiation that the atomic displacements in the nitrides occur predominately from energetic particles of the nuclear reactions with thermal neutrons in addition to the elastic collisions by fast neutron