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Sample records for deeply dry etched

  1. Dry Etching

    DEFF Research Database (Denmark)

    Stamate, Eugen; Yeom, Geun Young

    2016-01-01

    generation) to 2,200 × 2,500 mm (eighth generation), and the substrate size is expected to increase further within a few years. This chapter aims to present relevant details on dry etching including the phenomenology, materials to be etched with the different recipes, plasma sources fulfilling the dry...

  2. Dry etching for microelectronics

    CERN Document Server

    Powell, RA

    1984-01-01

    This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book

  3. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  4. Deeply-etched DBR mirrors for photonic integrated circuits and tunable lasers

    NARCIS (Netherlands)

    Docter, B.

    2009-01-01

    Deeply-etched Distributed Bragg Reflector (DBR) mirrors are a new versatile building block for Photonic Integrated Circuits that allows us to create more complex circuits for optical telecommunication applications. The DBR mirrors increase the device design flexibility because the mirrors can be

  5. Selective photochemical dry etching of compound semiconductors

    International Nuclear Information System (INIS)

    Ashby, C.I.H.

    1988-01-01

    When laser-driven etching of a semiconductor requires direct participation of photogenerated carriers, the etching quantum yield will be sensitive to the electronic properties of a specific semiconductor material. The band-gap energy of the semiconductor determines the minimum photon energy needed for carrier-driven etching since sub-gap photons do not generate free carriers. However, only those free carriers that reach the reacting surface contribute to etching and the ultimate carrier flux to the surface is controlled by more subtle electronic properties than the lowest-energy band gap. For example, the initial depth of carrier generation and the probability of carrier recombination between the point of generation and the surface profoundly influence the etching quantum yield. Appropriate manipulation of process parameters can provide additional reaction control based on such secondary electronic properties. Applications to selective dry etching of GaAs and related materials are discussed

  6. Dry etching technologies for reflective multilayer

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Kase, Yoshihisa; Yoshimori, Tomoaki; Muto, Makoto; Nonaka, Mikio; Iwami, Munenori

    2012-11-01

    We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

  7. Overview Of Dry-Etch Techniques

    Science.gov (United States)

    Salzer, John M.

    1986-08-01

    With pattern dimensions shrinking, dry methods of etching providing controllable degrees of anisotropy become a necessity. A number of different configurations of equipment - inline, hex, planar, barrel - have been offered, and within each type, there are numerous significant variations. Further, each specific type of machine must be perfected over a complex, interactive parameter space to achieve suitable removal of various materials. Among the most critical system parameters are the choice of cathode or anode to hold the wafers, the chamber pressure, the plasma excitation frequency, and the electrode and magnetron structures. Recent trends include the use of vacuum load locks, multiple chambers, multiple electrodes, downstream etching or stripping, and multistep processes. A major percentage of etches in production handle the three materials: polysilicon, oxide and aluminum. Recent process developments have targeted refractory metals, their silicides, and with increasing emphasis, silicon trenching. Indeed, with new VLSI structures, silicon trenching has become the process of greatest interest. For stripping, dry processes provide advantages other than anisotropy. Here, too, new configurations and methods have been introduced recently. While wet processes are less than desirable from a number of viewpoints (handling, safety, disposal, venting, classes of clean room, automatability), dry methods are still being perfected as a direct, universal replacement. The paper will give an overview of these machine structures and process solutions, together with examples of interest. These findings and the trends discussed are based on semiannual survey of manufacturers and users of the various types of equipment.

  8. Deeply-etched micromirror with vertical slit and metallic coating enabling transmission-type optical MEMS filters

    Science.gov (United States)

    Othman, Muhammad A.; Sabry, Yasser M.; Sadek, Mohamed; Nassar, Ismail M.; Khalil, Diaa A.

    2016-03-01

    In this work we report a novel optical MEMS deeply-etched mirror with metallic coating and vertical slot, where the later allows reflection and transmission by the micromirror. The micromirror as well as fiber grooves are fabricated using deep reactive ion etching technology, where the optical axis is in-plane and the components are self-aligned. The etching depth is 150 μm chosen to improve the micromirror optical throughput. The vertical optical structure is Al metal coated using the shadow mask technique. A fiber-coupled Fabry-Pérot filter is successfully realized using the fabricated structure. Experimental measurements were obtained based on a dielectric-coated optical fiber inserted into a fiber groove facing the slotted micromirror. A versatile performance in terms of the free spectral range and 3-dB bandwidth is achieved.

  9. Dry etching of thin chalcogenide films

    Energy Technology Data Exchange (ETDEWEB)

    Petkov, Kiril [Acad. J. Malinowski Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 109, 1113 Sofia (Bulgaria); Vassilev, Gergo; Vassilev, Venceslav, E-mail: kpetkov@clf.bas.b [Department of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria)

    2010-04-01

    Fluorocarbon plasmas (pure and mixtures with Ar) were used to investigate the changes in the etching rate depending on the chalcogenide glasses composition and light exposure. The experiments were performed on modified commercial HZM-4 vacuum equipment in a diode electrode configuration. The surface microstructure of thin chalcogenide layers and its change after etching in CCl{sub 2}F{sub 2} and CF{sub 4} plasmas were studied by SEM. The dependence of the composition of As-S-Ge, As-Se and multicomponent Ge-Se-Sb-Ag-I layers on the etching rate was discussed. The selective etching of some glasses observed after light exposure opens opportunities for deep structure processing applications.

  10. Low surface damage dry etched black silicon

    DEFF Research Database (Denmark)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt

    2017-01-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface dam...

  11. Low surface damage dry etched black silicon

    Science.gov (United States)

    Plakhotnyuk, Maksym M.; Gaudig, Maria; Davidsen, Rasmus Schmidt; Lindhard, Jonas Michael; Hirsch, Jens; Lausch, Dominik; Schmidt, Michael Stenbæk; Stamate, Eugen; Hansen, Ole

    2017-10-01

    Black silicon (bSi) is promising for integration into silicon solar cell fabrication flow due to its excellent light trapping and low reflectance, and a continuously improving passivation. However, intensive ion bombardment during the reactive ion etching used to fabricate bSi induces surface damage that causes significant recombination. Here, we present a process optimization strategy for bSi, where surface damage is reduced and surface passivation is improved while excellent light trapping and low reflectance are maintained. We demonstrate that reduction of the capacitively coupled plasma power, during reactive ion etching at non-cryogenic temperature (-20 °C), preserves the reflectivity below 1% and improves the effective minority carrier lifetime due to reduced ion energy. We investigate the effect of the etching process on the surface morphology, light trapping, reflectance, transmittance, and effective lifetime of bSi. Additional surface passivation using atomic layer deposition of Al2O3 significantly improves the effective lifetime. For n-type wafers, the lifetime reaches 12 ms for polished and 7.5 ms for bSi surfaces. For p-type wafers, the lifetime reaches 800 μs for both polished and bSi surfaces.

  12. Dry etching technologies for the advanced binary film

    Science.gov (United States)

    Iino, Yoshinori; Karyu, Makoto; Ita, Hirotsugu; Yoshimori, Tomoaki; Azumano, Hidehito; Muto, Makoto; Nonaka, Mikio

    2011-11-01

    ABF (Advanced Binary Film) developed by Hoya as a photomask for 32 (nm) and larger specifications provides excellent resistance to both mask cleaning and 193 (nm) excimer laser and thereby helps extend the lifetime of the mask itself compared to conventional photomasks and consequently reduces the semiconductor manufacturing cost [1,2,3]. Because ABF uses Ta-based films, which are different from Cr film or MoSi films commonly used for photomask, a new process is required for its etching technology. A patterning technology for ABF was established to perform the dry etching process for Ta-based films by using the knowledge gained from absorption layer etching for EUV mask that required the same Ta-film etching process [4]. Using the mask etching system ARES, which is manufactured by Shibaura Mechatronics, and its optimized etching process, a favorable CD (Critical Dimension) uniformity, a CD linearity and other etching characteristics were obtained in ABF patterning. Those results are reported here.

  13. Selective dry etching of silicon containing anti-reflective coating

    Science.gov (United States)

    Sridhar, Shyam; Nolan, Andrew; Wang, Li; Karakas, Erdinc; Voronin, Sergey; Biolsi, Peter; Ranjan, Alok

    2018-03-01

    Multi-layer patterning schemes involve the use of Silicon containing Anti-Reflective Coating (SiARC) films for their anti-reflective properties. Patterning transfer completion requires complete and selective removal of SiARC which is very difficult due to its high silicon content (>40%). Typically, SiARC removal is accomplished through a non-selective etch during the pattern transfer process using fluorine containing plasmas, or an ex-situ wet etch process using hydrofluoric acid is employed to remove the residual SiARC, post pattern transfer. Using a non-selective etch may result in profile distortion or wiggling, due to distortion of the underlying organic layer. The drawbacks of using wet etch process for SiARC removal are increased overall processing time and the need for additional equipment. Many applications may involve patterning of active structures in a poly-Si layer with an underlying oxide stopping layer. In such applications, SiARC removal selective to oxide using a wet process may prove futile. Removing SiARC selectively to SiO2 using a dry etch process is also challenging, due to similarity in the nature of chemical bonds (Si - O) in the two materials. In this work, we present highly selective etching of SiARC, in a plasma driven by a surface wave radial line slot antenna. The first step in the process involves an in-situ modification of the SiARC layer in O2 plasma followed by selective etching in a NF3/H2 plasma. Surface treatment in O2 plasma resulted in enhanced etching of the SiARC layer. For the right processing conditions, in-situ NF3/H2 dry etch process demonstrated selectivity values greater than 15:1 with respect to SiO2. The etching chemistry, however, was sensitive to NF3:H2 gas ratio. For dilute NF3 in H2, no SiARC etching was observed. Presumably, this is due to the deposition of ammonium fluorosilicate layer that occurs for dilute NF3/H2 plasmas. Additionally, challenges involved in selective SiARC removal (selective to SiO2, organic

  14. Top-down topography of deeply etched silicon in the scanning electron microscope

    International Nuclear Information System (INIS)

    Wells, Oliver C.; Murray, Conal E.; Rullan, Jonathan L.; Gignac, Lynne M.

    2004-01-01

    It is proposed to measure the cross sections of steep-sided etched lines and similar deep surface topography on partially completed silicon integrated circuit wafers using either the backscattered electron (BSE) or the low-loss electron (LLE) image in the scanning electron microscope (SEM). These images contain regions where the collected signal is zero because there is no direct line of sight between the landing point of the electron beam on the specimen and the BSE or LLE detector. It is proposed to use the boundary of such a region in the SEM image as a geometrical line to measure the surface topography. Or alternatively, a shadow can be seen in the distribution of either BSE or LLE with an image-forming detector system. The use of this shadow position on the detector to measure deep surface topography will be demonstrated

  15. In-plane deeply-etched optical MEMS notch filter with high-speed tunability

    International Nuclear Information System (INIS)

    Sabry, Yasser M; Eltagoury, Yomna M; Shebl, Ahmed; Khalil, Diaa; Soliman, Mostafa; Sadek, Mohamed

    2015-01-01

    Notch filters are used in spectroscopy, multi-photon microscopy, fluorescence instrumentation, optical sensors and other life science applications. One type of notch filter is based on a fiber-coupled Fabry–Pérot cavity, which is formed by a reflector (external mirror) facing a dielectric-coated end of an optical fiber. Tailoring this kind of optical filter for different applications is possible because the external mirror has fewer mechanical and optical constraints. In this paper we present optical modeling and implementation of a fiber-coupled Fabry–Pérot filter based on dielectric-coated optical fiber inserted into a micromachined fiber groove facing a metallized micromirror, which is driven by a high-speed MEMS actuator. The optical MEMS chip is fabricated using deep reactive ion etching (DRIE) technology on a silicon on insulator wafer, where the optical axis is parallel to the substrate (in-plane) and the optical/mechanical components are self-aligned by the photolithographic process. The DRIE etching depth is 150 μm, chosen to increase the micromirror optical throughput and improving the out-of-plane stiffness of the MEMS actuator. The MEMS actuator type is closing-gap, while its quality factor is almost doubled by slotting the fixed plate. A low-finesse Fabry–Pérot interferometer is formed by the metallized surface of the micromirror and a cleaved end of a standard single-mode fiber, for characterization of the MEMS actuator stroke and resonance frequency. The actuator achieves a travel distance of 800 nm at a resonance frequency of 89.9 kHz. The notch filter characteristics were measured using an optical spectrum analyzer, and the filter exhibits a free spectral range up to 100 nm and a notch rejection ratio up to 20 dB around a wavelength of 1300 nm. The presented device provides batch processing and low-cost production of the filter. (paper)

  16. Transmission-enabled fiber Fabry-Perot cavity based on a deeply etched slotted micromirror.

    Science.gov (United States)

    Othman, Muhammad A; Sabry, Yasser M; Sadek, Mohamed; Nassar, Ismail M; Khalil, Diaa A

    2018-06-01

    In this work, we report the analysis, fabrication, and characterization of an optical cavity built using a Bragg-coated fiber (BCF) mirror and a metal-coated microelectromechanical systems (MEMS) slotted micromirror, where the latter allows transmission output from the cavity. Theoretical modeling, using Fourier optics analysis for the cavity response based on tracing the propagation of light back and forth between the mirrors, is presented. Detailed simulation analysis is carried out for the spectral response of the cavity under different design conditions. MEMS chips of the slotted micromirror are fabricated using deep reactive ion etching of a silicon-on-insulator substrate with different device-etching depths of 150 μm and 80 μm with aluminum and gold metal coating, respectively. The cavity is characterized as an optical filter using a BCF with reflectivity that is larger than 95% in a 300 nm range across the E-band and the L-band. Versatile filter characteristics were obtained for different values of the MEMS micromirror slit width and cavity length. A free spectral range (FSR) of about 33 nm and a quality factor of about 196 were obtained for a 5.5 μm width aluminum slit, while an FSR of about 148 nm and a quality factor of about 148 were obtained for a 1.5 μm width gold slit. The presented structure opens the door for wide spectral response transmission-type MEMS filters.

  17. High rate dry etching of InGaZnO by BCl3/O2 plasma

    Science.gov (United States)

    Park, Wanjae; Whang, Ki-Woong; Gwang Yoon, Young; Hwan Kim, Jeong; Rha, Sang-Ho; Seong Hwang, Cheol

    2011-08-01

    This paper reports the results of the high-rate dry etching of indium gallium zinc oxide (IGZO) at room temperature using BCl3/O2 plasma. We achieved an etch rate of 250 nm/min. We inferred from the x-ray photoelectron spectroscopy analysis that BOx or BOClx radicals generated from BCl3/O2 plasma cause the etching of the IGZO material. O2 initiates the etching of IGZO, and Ar removes nonvolatile byproducts from the surface during the etching process. Consequently, a smooth etched surface results when these gases are added to the etch gas.

  18. Polymer degradation in reactive ion etching and its possible application to all dry processes

    International Nuclear Information System (INIS)

    Hiraoka, H.; Welsh, L.W. Jr.

    1981-01-01

    Dry etching processes involving CF 4 -plasma and reactive ion etching become increasingly important for microcircuit fabrication techniques. In these techniques polymer degradation and etch resistance against reactive species like F atoms and CF 3 + ions are the key factors in the processes. It is well-known that classical electron beam resists like poly(methyl methacrylate) and poly(1-butene sulfone) are not suitable for dry etching processes because they degrade rapidly under these etching conditions. In order to find a correlation of etching rate and polymer structures the thickness loss of polymer films have been measured for a variety of polymer films in reactive ion etching conditions, where CF 3 + ions are the major reactive species with an accelerating potential of 500 volts. Because of its high CF 4 -plasma and reactive ion etch resistance, and because of its high electron beam sensitivity, poly(methacrylonitrile) provides a positive working electron beam resist uniquely suited for all dry processes. (author)

  19. Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films

    International Nuclear Information System (INIS)

    Zheng Yanbin; Li Guang; Wang Wenlong; Li Xiuchang; Jiang Zhigang

    2012-01-01

    Amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) backplane technology is the best candidate for flat panel displays (FPDs). In this paper, a-IGZO TFT structures are described. The effects of etch parameters (rf power, dc-bias voltage and gas pressure) on the etch rate and etch profile are discussed. Three kinds of gas mixtures are compared in the dry etching process of a-IGZO thin films. Lastly, three problems are pointed out that need to be addressed in the dry etching process of a-IGZO TFTs. (plasma technology)

  20. Monolithic mode-locked lasers with deeply dry etched Bragg mirror

    DEFF Research Database (Denmark)

    Larsson, David; Yvind, Kresten; Hvam, Jørn Märcher

    Background: Semiconductor mode-locked lasers are attractive as components in futureultra high-speed telecommunication systems (160-640Gb/s); as picosecond pulse sources,clock-recovery devices and for demultiplexing in Optical Time Division Multiplexing(OTDM) systems. We have recently designed...... it possible to buy epitaxial wafers fromphotonic foundries as in the microelectronic industry.Design: The reflectivity spectrum from the total grating is calculated by matrixmultiplication of the individual periodic grating elements. The period of the grating,given by the mean effective index of the low....... The SiO2-film functions as a mask in the subsequent RIE of thesemiconductor (InP). We are now optimizing the semiconductor RIE to achieve 2 µmdeep waveguides and gratings with smooth vertical sidewalls and smooth bottom surface.This optimization involves optimizing the reaction chamber parameters: CH4/H2...

  1. Prevention of sidewall redeposition of etched byproducts in the dry Au etch process

    International Nuclear Information System (INIS)

    Aydemir, A; Akin, T

    2012-01-01

    In this paper we present a new technique of etching thin Au film in a dual frequency inductively coupled plasma (ICP) system on Si substrate to prevent the redeposition of etched Au particles over the sidewall of the masking material known as veils. First, the effect of the lithography step was investigated. Then the effects of etch chemistry and the process parameters on the redeposition of etched Au particles on the sidewall of the masking material were investigated. The redeposition effect was examined by depositing a thin Ti film over the masking material acting as a hard mask. The results showed that depositing a thin Ti film over the masking material prevents the formation of veils after etching Au in plasma environments for submicron size structures. Based on the results of this study, we propose a new technique that completely eliminates formation of veils after etching Au in plasma environments for submicron size structures. (paper)

  2. Advanced dry etching studies for micro- and nano-systems

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted

    and even contaminate the surface with metal flakes after resist removal. Ion beam etching has also been used for etching of steel without any problems with redeposition. For steel the etch rate was low which reduced the selectivity to the photo resist. Sapphire, a crystal of aluminum oxide, has a very low....... However, just generating an oxygen plasma does not result in a controllable etch and may give rise to a poor surface for later use. It may be necessary to introduce other gases such as SF6 to reduce surface roughness. Roughness can also be introduced by the mask in the form of redeposition of material...

  3. Effect of deposition temperature and thermal annealing on the dry etch rate of a-C: H films for the dry etch hard process of semiconductor devices

    International Nuclear Information System (INIS)

    Lee, Seung Moo; Won, Jaihyung; Yim, Soyoung; Park, Se Jun; Choi, Jongsik; Kim, Jeongtae; Lee, Hyeondeok; Byun, Dongjin

    2012-01-01

    The effect of deposition and thermal annealing temperatures on the dry etch rate of a-C:H films was investigated to increase our fundamental understanding of the relationship between thermal annealing and dry etch rate and to obtain a low dry etch rate hard mask. The hydrocarbon contents and hydrogen concentration were decreased with increasing deposition and annealing temperatures. The I(D)/I(G) intensity ratio and extinction coefficient of the a-C:H films were increased with increasing deposition and annealing temperatures because of the increase of sp 2 bonds in the a-C:H films. There was no relationship between the density of the unpaired electrons and the deposition temperature, or between the density of the unpaired electrons and the annealing temperature. However, the thermally annealed a-C:H films had fewer unpaired electrons compared with the as-deposited ones. Transmission electron microscopy analysis showed the absence of any crystallographic change after thermal annealing. The density of the as-deposited films was increased with increasing deposition temperature. The density of the 600 °C annealed a-C:H films deposited under 450 °C was decreased but at 550 °C was increased, and the density of all 800 °C annealed films was increased. The dry etch rate of the as-deposited a-C:H films was negatively correlated with the deposition temperature. The dry etch rate of the 600 °C annealed a-C:H films deposited at 350 °C and 450 °C was faster than that of the as-deposited film and that of the 800 °C annealed a-C:H films deposited at 350 °C and 450 °C was 17% faster than that of the as-deposited film. However, the dry etch rate of the 550 °C deposited a-C:H film was decreased after annealing at 600 °C and 800 °C. The dry etch rate of the as-deposited films was decreased with increasing density but that of the annealed a-C:H films was not. These results indicated that the dry etch rate of a-C:H films for dry etch hard masks can be further decreased by

  4. Alignment and Use of Self-Assembled Peptide Nanotubes as Dry-Etching Mask

    DEFF Research Database (Denmark)

    Andersen, Karsten Brandt; Castillo, Jaime; Bakmand, Tanya

    2012-01-01

    candidate for controlled nanofabrication without organic solvents. The present work demonstrates how this unique structure can be aligned, manipulated and used as both an etching mask in a dry etching procedure and as a lift-off material. As a further demonstration of the potential of this technique...

  5. Dry etching of ITO by magnetic pole enhanced inductively coupled plasma for display and biosensing devices

    Energy Technology Data Exchange (ETDEWEB)

    Meziani, T. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Vatican City State, Holy See,) (Italy)]. E-mail: tarik.meziani@jrc.it; Colpo, P. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Va) (Italy)]. E-mail: pascal.colpo@jrc.it; Lambertini, V. [Centro Ricerche Fiat, Strada Torino 50, 10043 Orbassano (TO) (Italy); Ceccone, G. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Va) (Italy); Rossi, F. [European Commission, Joint Research Centre, Institute for Health and Consumer Protection, 21020 Ispra (Va) (Italy)

    2006-03-15

    The dry etching of indium tin oxide (ITO) layers deposited on glass substrates was investigated in a high density inductively coupled plasma (ICP) source. This innovative low pressure plasma source uses a magnetic core in order to concentrate the electromagnetic energy on the plasma and thus provides for higher plasma density and better uniformity. Different gas mixtures were tested containing mainly hydrogen, argon and methane. In Ar/H{sub 2} mixtures and at constant bias voltage (-100 V), the etch rate shows a linear dependence with input power varying the same way as the ion density, which confirms the hypothesis that the etching process is mainly physical. In CH{sub 4}/H{sub 2} mixtures, the etch rate goes through a maximum for 10% CH{sub 4} indicating a participation of the radicals to the etching process. However, the etch rate remains quite low with this type of gas mixture (around 10 nm/min) because the etching mechanism appears to be competing with a deposition process. With CH{sub 4}/Ar mixtures, a similar feature appeared but the etch rate was much higher, reaching 130 nm/min at 10% of CH{sub 4} in Ar. The increase in etch rate with the addition of a small quantity of methane indicates that the physical etching process is enhanced by a chemical mechanism. The etching process was monitored by optical emission spectroscopy that appeared to be a valuable tool for endpoint detection.

  6. Dry etching characteristics of GaN for blue/green light-emitting diode fabrication

    International Nuclear Information System (INIS)

    Baik, K.H.; Pearton, S.J.

    2009-01-01

    The etch rates, surface morphology and sidewall profiles of features formed in GaN/InGaN/AlGaN multiple quantum well light-emitting diodes by Cl 2 -based dry etching are reported. The chlorine provides an enhancement in etch rate of over a factor of 40 relative to the physical etching provided by Ar and the etching is reactant-limited until chlorine gas flow rates of at least 50 standard cubic centimeters per minute. Mesa sidewall profile angle control is possible using a combination of Cl 2 /Ar plasma chemistry and SiO 2 mask. N-face GaN is found to etch faster than Ga-face surfaces under the same conditions. Patterning of the sapphire substrate for improved light extraction is also possible using the same plasma chemistry

  7. Dry etch challenges for CD shrinkage in memory process

    Science.gov (United States)

    Matsushita, Takaya; Matsumoto, Takanori; Mukai, Hidefumi; Kyoh, Suigen; Hashimoto, Kohji

    2015-03-01

    Line pattern collapse attracts attention as a new problem of the L&S formation in sub-20nm H.P feature. Line pattern collapse that occurs in a slight non-uniformity of adjacent CD (Critical dimension) space using double patterning process has been studied with focus on micro-loading effect in Si etching. Bias RF pulsing plasma etching process using low duty cycle helped increase of selectivity Si to SiO2. In addition to the effect of Bias RF pulsing process, the thin mask obtained from improvement of selectivity has greatly suppressed micro-loading in Si etching. However it was found that micro-loading effect worsen again in sub-20nm space width. It has been confirmed that by using cycle etch process to remove deposition with CFx based etching micro-loading effect could be suppressed. Finally, Si etching process condition using combination of results above could provide finer line and space without "line pattern collapse" in sub-20nm.

  8. Pulsed high-density plasmas for advanced dry etching processes

    International Nuclear Information System (INIS)

    Banna, Samer; Agarwal, Ankur; Cunge, Gilles; Darnon, Maxime; Pargon, Erwine; Joubert, Olivier

    2012-01-01

    Plasma etching processes at the 22 nm technology node and below will have to satisfy multiple stringent scaling requirements of microelectronics fabrication. To satisfy these requirements simultaneously, significant improvements in controlling key plasma parameters are essential. Pulsed plasmas exhibit considerable potential to meet the majority of the scaling challenges, while leveraging the broad expertise developed over the years in conventional continuous wave plasma processing. Comprehending the underlying physics and etching mechanisms in pulsed plasma operation is, however, a complex undertaking; hence the full potential of this strategy has not yet been realized. In this review paper, we first address the general potential of pulsed plasmas for plasma etching processes followed by the dynamics of pulsed plasmas in conventional high-density plasma reactors. The authors reviewed more than 30 years of academic research on pulsed plasmas for microelectronics processing, primarily for silicon and conductor etch applications, highlighting the potential benefits to date and challenges in extending the technology for mass-production. Schemes such as source pulsing, bias pulsing, synchronous pulsing, and others in conventional high-density plasma reactors used in the semiconductor industry have demonstrated greater flexibility in controlling critical plasma parameters such as ion and radical densities, ion energies, and electron temperature. Specifically, plasma pulsing allows for independent control of ion flux and neutral radicals flux to the wafer, which is key to eliminating several feature profile distortions at the nanometer scale. However, such flexibility might also introduce some difficulty in developing new etching processes based on pulsed plasmas. Therefore, the main characteristics of continuous wave plasmas and different pulsing schemes are compared to provide guidelines for implementing different schemes in advanced plasma etching processes based on

  9. Continuous Process for the Etching, Rinsing and Drying of MEMS Using Supercritical Carbon Dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Min, Seon Ki; Han, Gap Su; You, Seong-sik [Korea University of Technology and Education, Cheonan (Korea, Republic of)

    2015-10-15

    The previous etching, rinsing and drying processes of wafers for MEMS (microelectromechanical system) using SC-CO{sub 2} (supercritical-CO{sub 2}) consists of two steps. Firstly, MEMS-wafers are etched by organic solvent in a separate etching equipment from the high pressure dryer and then moved to the high pressure dryer to rinse and dry them using SC-CO{sub 2}. We found that the previous two step process could be applied to etch and dry wafers for MEMS but could not confirm the reproducibility through several experiments. We thought the cause of that was the stiction of structures occurring due to vaporization of the etching solvent during moving MEMS wafer to high pressure dryer after etching it outside. In order to improve the structure stiction problem, we designed a continuous process for etching, rinsing and drying MEMS-wafers using SC-CO{sub 2} without moving them. And we also wanted to know relations of states of carbon dioxide (gas, liquid, supercritical fluid) to the structure stiction problem. In the case of using gas carbon dioxide (3 MPa, 25 .deg. C) as an etching solvent, we could obtain well-treated MEMS-wafers without stiction and confirm the reproducibility of experimental results. The quantity of rinsing solvent used could be also reduced compared with the previous technology. In the case of using liquid carbon dioxide (3 MPa, 5 .deg. C), we could not obtain well-treated MEMS-wafers without stiction due to the phase separation of between liquid carbon dioxide and etching co-solvent(acetone). In the case of using SC-CO{sub 2} (7.5 Mpa, 40 .deg. C), we had as good results as those of the case using gas-CO{sub 2}. Besides the processing time was shortened compared with that of the case of using gas-CO{sub 2}.

  10. Exploration of suitable dry etch technologies for directed self-assembly

    Science.gov (United States)

    Yamashita, Fumiko; Nishimura, Eiichi; Yatsuda, Koichi; Mochiki, Hiromasa; Bannister, Julie

    2012-03-01

    Directed self-assembly (DSA) has shown the potential to replace traditional resist patterns and provide a lower cost alternative for sub-20-nm patterns. One of the possible roadblocks for DSA implementation is the ability to etch the polymers to produce quality masks for subsequent etch processes. We have studied the effects of RF frequency and etch chemistry for dry developing DSA patterns. The results of the study showed a capacitively-coupled plasma (CCP) reactor with very high frequency (VHF) had superior pattern development after the block co-polymer (BCP) etch. The VHF CCP demonstrated minimal BCP height loss and line edge roughness (LER)/line width roughness (LWR). The advantage of CCP over ICP is the low dissociation so the etch rate of BCP is maintained low enough for process control. Additionally, the advantage of VHF is the low electron energy with a tight ion energy distribution that enables removal of the polymethyl methacrylate (PMMA) with good selectivity to polystyrene (PS) and minimal LER/LWR. Etch chemistries were evaluated on the VHF CCP to determine ability to treat the BCPs to increase etch resistance and feature resolution. The right combination of RF source frequencies and etch chemistry can help overcome the challenges of using DSA patterns to create good etch results.

  11. Black Silicon formation using dry etching for solar cells applications

    International Nuclear Information System (INIS)

    Murias, D.; Reyes-Betanzo, C.; Moreno, M.; Torres, A.; Itzmoyotl, A.; Ambrosio, R.; Soriano, M.; Lucas, J.; Cabarrocas, P. Roca i

    2012-01-01

    A study on the formation of Black Silicon on crystalline silicon surface using SF 6 /O 2 and SF 6 /O 2 /CH 4 based plasmas in a reactive ion etching (RIE) system is presented. The effect of the RF power, chamber pressure, process time, gas flow rates, and gas mixtures on the texture of silicon surface has been analyzed. Completely Black Silicon surfaces containing pyramid like structures have been obtained, using an optimized mask-free plasma process. Moreover, the Black Silicon surfaces have demonstrated average values of 1% and 4% for specular and diffuse reflectance respectively, feature that is suitable for the fabrication of low cost solar cells.

  12. Hydrogen iodide-based dry etching of GaAs, InP, and related compounds

    International Nuclear Information System (INIS)

    Pearton, S.J.; Chakrabarti, U.K.; Hobson, W.S.; Abernathy, C.R.; Katz, A.; Ren, F.; Fullowan, T.R.; Perley, A.P.

    1992-01-01

    In this paper HI/H 2 /Ar discharges are shown to be universal etchants for III-V semiconductors, giving rise to highly anisotropic features with smooth surface morphologies. At low dc Self bias (-V) and low pressure (1 mTorr), etch rates for all III-V materials of >2000 Angstrom · min -1 are possible for high HI percentages in the discharges, whereas rates greater than 1 μm · min -1 are obtained at higher pressures and dc biases. These etch rates are approximately an order of magnitude faster than for CH 4 /H 2 Ar mixtures under the same conditions and there is no polymer deposition on the mask or within the reactor chamber with HI/H 2 /Ar. Auger electron spectroscopy reveals residue-free, stoichiometric surfaces after dry etching in this mixture. As a result, photoluminescent intensities from dry etched samples remain high with little apparent damage introduction. Changes in the near-surface carrier concentration due to hydrogen passivation effects are also negligible with HI-based mixtures in comparison to CH 4 -based dry etching

  13. Design of experiment characterization of microneedle fabrication processes based on dry silicon etching

    Science.gov (United States)

    Held, J.; Gaspar, J.; Ruther, P.; Hagner, M.; Cismak, A.; Heilmann, A.; Paul, O.

    2010-02-01

    This paper reports on the characterization of dry etching-based processes for the fabrication of silicon microneedles using a design of experiment (DoE) approach. The possibility of using such microneedles as protruding microelectrodes able to electroporate adherently growing cells and record intracellular potentials motivates the systematic analysis of the influence of etching parameters on the needle shape. Two processes are characterized: a fully isotropic etch process and a three-step etching approach. In the first case, the shape of the microneedles is defined by a single etch step. For the stepped method, the structures are realized using the following sequence: a first, isotropic step defines the tip; this is followed by anisotropic etching that increases the height of the needle; a final isotropic procedure thins the microneedle and sharpens its tip. From the various process parameters tested, it is concluded that the isotropic fabrication is influenced mostly by four process parameters, whereas six parameters dominantly govern the outcome of the stepped etching technique. The dependence of the needle shape on the etch mask diameter is also investigated. Microneedles with diameters down to the sub-micrometer range and heights below 10 µm are obtained. The experimental design is performed using the D-optimal method. The resulting geometry, i.e. heights, diameters and radii of curvature measured at different positions, is extracted from scanning electron micrographs of needle cross-sections obtained from cuts by focused ion beam. The process parameters are used as inputs and the geometry features of the microneedles as outputs for the analysis of the process.

  14. Design of experiment characterization of microneedle fabrication processes based on dry silicon etching

    International Nuclear Information System (INIS)

    Held, J; Gaspar, J; Ruther, P; Paul, O; Hagner, M; Cismak, A; Heilmann, A

    2010-01-01

    This paper reports on the characterization of dry etching-based processes for the fabrication of silicon microneedles using a design of experiment (DoE) approach. The possibility of using such microneedles as protruding microelectrodes able to electroporate adherently growing cells and record intracellular potentials motivates the systematic analysis of the influence of etching parameters on the needle shape. Two processes are characterized: a fully isotropic etch process and a three-step etching approach. In the first case, the shape of the microneedles is defined by a single etch step. For the stepped method, the structures are realized using the following sequence: a first, isotropic step defines the tip; this is followed by anisotropic etching that increases the height of the needle; a final isotropic procedure thins the microneedle and sharpens its tip. From the various process parameters tested, it is concluded that the isotropic fabrication is influenced mostly by four process parameters, whereas six parameters dominantly govern the outcome of the stepped etching technique. The dependence of the needle shape on the etch mask diameter is also investigated. Microneedles with diameters down to the sub-micrometer range and heights below 10 µm are obtained. The experimental design is performed using the D-optimal method. The resulting geometry, i.e. heights, diameters and radii of curvature measured at different positions, is extracted from scanning electron micrographs of needle cross-sections obtained from cuts by focused ion beam. The process parameters are used as inputs and the geometry features of the microneedles as outputs for the analysis of the process.

  15. Defect-selective dry etching for quick and easy probing of hexagonal boron nitride domains

    Science.gov (United States)

    Wu, Qinke; Lee, Joohyun; Park, Sangwoo; Woo, Hwi Je; Lee, Sungjoo; Song, Young Jae

    2018-03-01

    In this study, we demonstrate a new method to selectively etch the point defects or the boundaries of as-grown hexagonal boron nitride (hBN) films and flakes in situ on copper substrates using hydrogen and argon gases. The initial quality of the chemical vapor deposition-grown hBN films and flakes was confirmed by UV-vis absorption spectroscopy, atomic force microscopy, and transmission electron microscopy. Different gas flow ratios of Ar/H2 were then employed to etch the same quality of samples and it was found that etching with hydrogen starts from the point defects and grows epitaxially, which helps in confirming crystalline orientations. However, etching with argon is sensitive to line defects (boundaries) and helps in visualizing the domain size. Finally, based on this defect-selective dry etching technique, it could be visualized that the domains of a polycrystalline hBN monolayer merged together with many parts, even with those that grew from a single nucleation seed.

  16. Selective laser-induced photochemical dry etching of semiconductors controlled by ion-bombardment-induced damage

    International Nuclear Information System (INIS)

    Ashby, C.I.H.; Myers, D.R.; Vook, F.L.

    1987-01-01

    When a photochemical dry etching process requires direct participation of photogenerated carriers in the chemical reaction, it is sensitive to the electronic properties of the semiconductor. For such solid-excitation-based dry etching processes, the balance between reaction and carrier recombination rates determines the practical utility of a particular reaction for device fabrication. The distance from the surface at which the photocarriers are generated by light adsorption is determined by the absorption coefficient. In the absence of an external bias potential, only those carriers formed within a diffusion length of the surface space-charge region will have an opportunity to drive the dry etching reaction. When the absorption coefficient is high, most of the photons generate carriers within a diffusion length from the surface space-charge region, and the etching rate is largely determined by the balance between the rate of the carrier-driven reaction and the surface recombination velocity. When the recombination rate of free carriers in the bulk of the semiconductor is high, the effective diffusion length is reduced and fewer of the carriers generated in the subsurface region ever reach the surface. An important effect of ion bombardment is the creation of many lattice defects that increase the rate of recombination of electrons and holes. When a sufficient number of defects, which act as recombination sites, are formed during ion implantation, the recombination of photogenerated carriers at these defects in the subsurface region can greatly reduce the number of carriers which can reach the surface and drive a photochemical etching reaction

  17. Fabrication of Ni stamp with high aspect ratio, two-leveled, cylindrical microstructures using dry etching and electroplating

    DEFF Research Database (Denmark)

    Petersen, Ritika Singh; Keller, Stephan Sylvest; Hansen, Ole

    2015-01-01

    obtained by defining a reservoir and a separating trench with different depths of 85 and 125 μm, respectively, in a single embossing step. The fabrication of the required two leveled stamp is done using a modified DEEMO (dry etching, electroplating and molding) process. Dry etching using the Bosch process...... and electroplating are optimized to obtain a stamp with smooth stamp surfaces and a positive sidewall profile. Using this stamp, hot embossing is performed successfully with excellent yield and high replication fidelity....

  18. Composite shear bond strength to dry and wet enamel with three self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Shafiee F

    2006-01-01

    Full Text Available Background and Aim: The bonding mechanisms of self etching primers, based upon the simultaneous etching and priming of dentin, simplifies the bonding technique, but the efficiency of these systems is still controversial. This study compared the shear bond strength of three self etch adhesive systems in dry and wet conditions. Materials and Method: In this experimental study, 77 intact bovine lower incisors with flat 600 grit sanded enamel surface were fixed in acrylic molds and divided into 7 groups, of 11 teeth. The enamel surfaces were treated according to a special procedure as follows: Group 1: Prompt L-Pop (PLP in dry condition, Group 2: Prompt L-Pop in wet condition, Group 3: Clearfield SE Bond (CSEB in dry condition, Group 4: Clearfield SE Bond in wet condition, Group 5: iBond (iB in dry condition, Group 6: iBond in wet condition, Group 7: Margin Bond (Control in dry condition. Surfaces were air dried for ten seconds, or blot dried in wet condition. Composite resin was bonded on the enamel and built up by applying a cylindric teflon split mold (4 mm height 2mm diameter. After 24 hours storage in dionized water at room temperature, all specimens were thermocycled and shear bond test was employed by a universal testing machine (Instron with a cross-head speed of 1mm/min. The shear bond strength was recorded in MPa and data were analyzed with ANOVA and Scheffe statistical tests. P<0.05 was considered as statistically significant. The mode of failure was examined under a stereomicroscope. Results: 1- Shear bond strength of CSEB in dry condition (21.5 ± 4.8 MPa was significantly higher than PLP and iB groups (p<0.0001. 2- Shear bond strength of iB and PLP groups in dry condition (9.60 ± 2.2, 9.49 ± 3 MPa were significantly lower than CSEB and control (2.99 ± 5.1 MPa (P<0.0001. 3- There was no significant difference between PLP and iB groups in dry condition (P=1. 4- Shear bond strength of CSEB in wet condition (21.8 ± 3 MPa was

  19. Teste de microtração em esmalte de um sistema adesivo universal pela técnica etch-and-rinse e etch-and-dry

    OpenAIRE

    Peneque, Carolina Martins Santos

    2014-01-01

    Tese de mestrado, Medicina dentária, Universidade de Lisboa, Faculdade de Medicina Dentária, 2014 Objetivo: Recorrendo ao teste de microtração, avaliar e comparar as forças adesivas em esmalte cortado de um sistema adesivo universal (Scotchbond Universal Adhesive, 3M ESPE, St. Paul, MN, USA) usado segundo as instruções do fabricante, nos modos etch-and-rinse e etch-and-dry. A hipótese nula testada é a de que não existem diferenças estatisticamente significativas nas forças de adesão ao esm...

  20. Large-aperture focusing of x rays with micropore optics using dry etching of silicon wafers.

    Science.gov (United States)

    Ezoe, Yuichiro; Moriyama, Teppei; Ogawa, Tomohiro; Kakiuchi, Takuya; Mitsuishi, Ikuyuki; Mitsuda, Kazuhisa; Aoki, Tatsuhiko; Morishita, Kohei; Nakajima, Kazuo

    2012-03-01

    Large-aperture focusing of Al K(α) 1.49 keV x-ray photons using micropore optics made from a dry-etched 4 in. (100 mm) silicon wafer is demonstrated. Sidewalls of the micropores are smoothed with high-temperature annealing to work as x-ray mirrors. The wafer is bent to a spherical shape to collect parallel x rays into a focus. Our result supports that this new type of optics allows for the manufacturing of ultralight-weight and high-performance x-ray imaging optics with large apertures at low cost. © 2012 Optical Society of America

  1. Improved photoluminescence efficiency in UV nanopillar light emitting diode structures by recovery of dry etching damage.

    Science.gov (United States)

    Jeon, Dae-Woo; Jang, Lee-Woon; Jeon, Ju-Won; Park, Jae-Woo; Song, Young Ho; Jeon, Seong-Ran; Ju, Jin-Woo; Baek, Jong Hyeob; Lee, In-Hwan

    2013-05-01

    In this study, we have fabricated 375-nm-wavelength InGaN/AlInGaN nanopillar light emitting diodes (LED) structures on c-plane sapphire. A uniform and highly vertical nanopillar structure was fabricated using self-organized Ni/SiO2 nano-size mask by dry etching method. To minimize the dry etching damage, the samples were subjected to high temperature annealing with subsequent chemical passivation in KOH solution. Prior to annealing and passivation the UV nanopillar LEDs showed the photoluminescence (PL) efficiency about 2.5 times higher than conventional UV LED structures which is attributed to better light extraction efficiency and possibly some improvement of internal quantum efficiency due to partially relieved strain. Annealing alone further increased the PL efficiency by about 4.5 times compared to the conventional UV LEDs, while KOH passivation led to the overall PL efficiency improvement by more than 7 times. Combined results of Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) suggest that annealing decreases the number of lattice defects and relieves the strain in the surface region of the nanopillars whereas KOH treatment removes the surface oxide from nanopillar surface.

  2. A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2 and SF6/O2

    Directory of Open Access Journals (Sweden)

    Seon-Geun Oh

    2014-01-01

    Full Text Available The characteristics of the dry etching of SiNx:H thin films for display devices using SF6/O2 and NF3/O2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE system. The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz, pressure, and gas flow ratio. For the SiNx:H film, the etch rates obtained using NF3/O2 were higher than those obtained using SF6/O2 under various process conditions. The relationships between the etch rates and the usual monitoring parameters—the optical emission spectroscopy (OES intensity of atomic fluorine (685.1 nm and 702.89 nm and the voltages VH and VL—were investigated. The OES intensity data indicated a correlation between the bulk plasma density and the atomic fluorine density. The etch rate was proportional to the product of the OES intensity of atomic fluorine (I(F and the square root of the voltages (Vh+Vl on the assumption that the velocity of the reactive fluorine was proportional to the square root of the voltages.

  3. Fabrication, measurement and tuning of a photonic crystal H1-cavity in deeply etched InP/InGaAsP/InP

    NARCIS (Netherlands)

    Kicken, H.H.J.E.; Barbu, I.; Gabriels, J.; Heijden, van der R.W.; Nötzel, R.; Karouta, F.; Salemink, H.W.M.; Drift, van der E.W.J.M.

    2008-01-01

    A point defect cavity (H1) was fabricated by deep etching in the InP/InGaAsP/InP system. The optical properties of the devices were experimentally investigated by transmission spectroscopy yielding a Q-factor of ~65. The resonance frequency of the defect cavity was shifted, by infiltrating the

  4. Dry Phosphorus silicate glass etching and surface conditioning and cleaning for multi-crystalline silicon solar cell processing

    International Nuclear Information System (INIS)

    Kagilik, Ahmed S.

    2014-01-01

    As an alternative to the wet chemical etching method, dry chemical etching processes for Phosphorus silicate glass [PSG} layer removal using Trifluormethane/Sulfur Hexafluoride (CHF 3 / SF 6 ) gas mixture in commercial silicon-nitride plasma enhanced chemical vapour deposition (SiN-PECVD) system is applied. The dependence of the solar cell performance on the etching temperature is investigated and optimized. It is found that the SiN-PECVD system temperature variation has a significant impact on the whole solar cell characteristics. A dry plasma cleaning treatment of the Si wafer surface after the PSG removal step is also investigated and developed. The cleaning step is used to remove the polymer film which is formed during the PSG etching using both oxygen and hydrogen gases. By applying an additional cleaning step, the polymer film deposited on the silicon wafer surface after PSG etching is eliminated. The effect of different plasma cleaning conditions on solar cell performance is investigated. After optimization of the plasma operating conditions, the performance of the solar cell is improved and the overall gain in efficiency of 0.6% absolute is yielded compared to a cell without any further cleaning step. On the other hand, the best solar cell characteristics can reach values close to that achieved by the conventional wet chemical etching processes demonstrating the effectiveness of the additional O 2 /H 2 post cleaning treatment.(author)

  5. ICP dry etching ITO to improve the performance of GaN-based LEDs

    International Nuclear Information System (INIS)

    Meng Lili; Chen Yixin; Ma Li; Liu Zike; Shen Guangdi

    2011-01-01

    In order to improve the light efficiency of the conventional GaN-based light-emitting diodes (LEDs), the indium tin oxide (ITO) film is introduced as the current spreading layer and the light anti-reflecting layer on the p-GaN surface. There is a big problem with the ITO thin film's corrosion during the electrode preparation. In this paper, at least, the edge of the ITO film was lateral corroded 3.5 μm width, i.e. 6.43%-1/3 of ITO film's area. An optimized simple process, i.e. inductively couple plasma (ICP), was introduced to solve this problem. The ICP process not only prevented the ITO film from lateral corrosion, but also improved the LED's light intensity and device performance. The edge of the ITO film by ICP dry etching is steep, and the areas of ITO film are whole. Compared with the chip by wet etching, the areas of light emission increase by 6.43% at least and the chip's lop values increase by 45.9% at most. (semiconductor devices)

  6. Dry etching of new phase-change material Al1.3Sb3Te in CF4/Ar plasma

    International Nuclear Information System (INIS)

    Zhang Xu; Rao Feng; Liu Bo; Peng Cheng; Zhou Xilin; Yao Dongning; Guo Xiaohui; Song Sannian; Wang Liangyong; Cheng Yan; Wu Liangcai; Song Zhitang; Feng Songlin

    2012-01-01

    The dry etching characteristic of Al 1.3 Sb 3 Te film was investigated by using a CF 4 /Ar gas mixture. The experimental control parameters were gas flow rate into the chamber, CF 4 /Ar ratio, the O 2 addition, the chamber background pressure, and the incident RF power applied to the lower electrode. The total flow rate was 50 sccm and the behavior of etch rate of Al 1.3 Sb 3 Te thin films was investigated as a function of the CF 4 /Ar ratio, the O 2 addition, the chamber background pressure, and the incident RF power. Then the parameters were optimized. The fast etch rate was up to 70.8 nm/min and a smooth surface was achieved using optimized etching parameters of CF 4 concentration of 4%, power of 300 W and pressure of 80 mTorr.

  7. Effect of different air-drying time on the microleakage of single-step self-etch adhesives

    OpenAIRE

    Moosavi, Horieh; Forghani, Maryam; Managhebi, Esmatsadat

    2013-01-01

    Objectives This study evaluated the effect of three different air-drying times on microleakage of three self-etch adhesive systems. Materials and Methods Class I cavities were prepared for 108 extracted sound human premolars. The teeth were divided into three main groups based on three different adhesives: Opti Bond All in One (OBAO), Clearfil S3 Bond (CSB), Bond Force (BF). Each main group divided into three subgroups regarding the air-drying time: without application of air stream...

  8. Effect of different air-drying time on the microleakage of single-step self-etch adhesives

    Directory of Open Access Journals (Sweden)

    Horieh Moosavi

    2013-05-01

    Full Text Available Objectives This study evaluated the effect of three different air-drying times on microleakage of three self-etch adhesive systems. Materials and Methods Class I cavities were prepared for 108 extracted sound human premolars. The teeth were divided into three main groups based on three different adhesives: Opti Bond All in One (OBAO, Clearfil S3 Bond (CSB, Bond Force (BF. Each main group divided into three subgroups regarding the air-drying time: without application of air stream, following the manufacturer's instruction, for 10 sec more than manufacturer's instruction. After completion of restorations, specimens were thermocycled and then connected to a fluid filtration system to evaluate microleakage. The data were statistically analyzed using two-way ANOVA and Tukey-test (α = 0.05. Results The microleakage of all adhesives decreased when the air-drying time increased from 0 sec to manufacturer's instruction (p < 0.001. The microleakage of BF reached its lowest values after increasing the drying time to 10 sec more than the manufacturer's instruction (p < 0.001. Microleakage of OBAO and CSB was significantly lower compared to BF in all three drying time (p < 0.001. Conclusions Increasing in air-drying time of adhesive layer in one-step self-etch adhesives caused reduction of microleakage, but the amount of this reduction may be dependent on the adhesive components of self-etch adhesives.

  9. Fabrication of high quality GaN nanopillar arrays by dry and wet chemical etching

    OpenAIRE

    Paramanik, Dipak; Motayed, Abhishek; King, Matthew; Ha, Jong-Yoon; Kryluk, Sergi; Davydov, Albert V.; Talin, Alec

    2013-01-01

    We study strain relaxation and surface damage of GaN nanopillar arrays fabricated using inductively coupled plasma (ICP) etching and post etch wet chemical treatment. We controlled the shape and surface damage of such nanopillar structures through selection of etching parameters. We compared different substrate temperatures and different chlorine-based etch chemistries to fabricate high quality GaN nanopillars. Room temperature photoluminescence and Raman scattering measurements were carried ...

  10. Effect of moisture and drying time on the bond strength of the one-step self-etching adhesive system

    Directory of Open Access Journals (Sweden)

    Yoon Lee

    2012-08-01

    Full Text Available Objectives To investigate the effect of dentin moisture degree and air-drying time on dentin-bond strength of two different one-step self-etching adhesive systems. Materials and Methods Twenty-four human third molars were used for microtensile bond strength testing of G-Bond and Clearfil S3 Bond. The dentin surface was either blot-dried or air-dried before applying these adhesive agents. After application of the adhesive agent, three different air drying times were evaluated: 1, 5, and 10 sec. Composite resin was build up to 4 mm thickness and light cured for 40 sec with 2 separate layers. Then the tooth was sectioned and trimmed to measure the microtensile bond strength using a universal testing machine. The measured bond strengths were analyzed with three-way ANOVA and regression analysis was done (p = 0.05. Results All three factors, materials, dentin wetness and air drying time, showed significant effect on the microtensile bond strength. Clearfil S3 Bond, dry dentin surface and 10 sec air drying time showed higher bond strength. Conclusions Within the limitation of this experiment, air drying time after the application of the one-step self-etching adhesive agent was the most significant factor affecting the bond strength, followed by the material difference and dentin moisture before applying the adhesive agent.

  11. Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes

    International Nuclear Information System (INIS)

    Green, R T; Luxmoore, I J; Houston, P A; Ranalli, F; Wang, T; Parbrook, P J; Uren, M J; Wallis, D J; Martin, T

    2009-01-01

    A SiCl 4 /SF 6 dry etch plasma recipe is presented giving a selectivity of 14:1 between GaN and AlGaN. Using a leakage test structure, which enables bulk and surface leakage components to be identified independently, the optimized recipe is compared to an un-etched sample and devices recessed using a Cl 2 /Ar/O 2 -based plasma chemistry. Devices etched using the SiCl 4 /SF 6 recipe demonstrated reduced bulk and surface leakage currents when operated over a wide range of temperatures. Consequently the SiCl 4 /SF 6 recipe is identified as most suitable for the fabrication of gate recessed AlGaN/GaN HEMTs

  12. Dry-plasma-free chemical etch technique for variability reduction in multi-patterning (Conference Presentation)

    Science.gov (United States)

    Kal, Subhadeep; Mohanty, Nihar; Farrell, Richard A.; Franke, Elliott; Raley, Angelique; Thibaut, Sophie; Pereira, Cheryl; Pillai, Karthik; Ko, Akiteru; Mosden, Aelan; Biolsi, Peter

    2017-04-01

    Scaling beyond the 7nm technology node demands significant control over the variability down to a few angstroms, in order to achieve reasonable yield. For example, to meet the current scaling targets it is highly desirable to achieve sub 30nm pitch line/space features at back-end of the line (BEOL) or front end of line (FEOL); uniform and precise contact/hole patterning at middle of line (MOL). One of the quintessential requirements for such precise and possibly self-aligned patterning strategies is superior etch selectivity between the target films while other masks/films are exposed. The need to achieve high etch selectivity becomes more evident for unit process development at MOL and BEOL, as a result of low density films choices (compared to FEOL film choices) due to lower temperature budget. Low etch selectivity with conventional plasma and wet chemical etch techniques, causes significant gouging (un-intended etching of etch stop layer, as shown in Fig 1), high line edge roughness (LER)/line width roughness (LWR), non-uniformity, etc. In certain circumstances this may lead to added downstream process stochastics. Furthermore, conventional plasma etches may also have the added disadvantage of plasma VUV damage and corner rounding (Fig. 1). Finally, the above mentioned factors can potentially compromise edge placement error (EPE) and/or yield. Therefore a process flow enabled with extremely high selective etches inherent to film properties and/or etch chemistries is a significant advantage. To improve this etch selectivity for certain etch steps during a process flow, we have to implement alternate highly selective, plasma free techniques in conjunction with conventional plasma etches (Fig 2.). In this article, we will present our plasma free, chemical gas phase etch technique using chemistries that have high selectivity towards a spectrum of films owing to the reaction mechanism ( as shown Fig 1). Gas phase etches also help eliminate plasma damage to the

  13. Response of murine bone marrow-derived mesenchymal stromal cells to dry-etched porous silicon scaffolds.

    Science.gov (United States)

    Hajj-Hassan, Mohamad; Khayyat-Kholghi, Maedeh; Wang, Huifen; Chodavarapu, Vamsy; Henderson, Janet E

    2011-11-01

    Porous silicon shows great promise as a bio-interface material due to its large surface to volume ratio, its stability in aqueous solutions and to the ability to precisely regulate its pore characteristics. In the current study, porous silicon scaffolds were fabricated from single crystalline silicon wafers by a novel xenon difluoride dry etching technique. This simplified dry etch fabrication process allows selective formation of porous silicon using a standard photoresist as mask material and eliminates the post-formation drying step typically required for the wet etching techniques, thereby reducing the risk of damaging the newly formed porous silicon. The porous silicon scaffolds supported the growth of primary cultures of bone marrow derived mesenchymal stromal cells (MSC) plated at high density for up to 21 days in culture with no significant loss of viability, assessed using Alamar Blue. Scanning electron micrographs confirmed a dense lawn of cells at 9 days of culture and the presence of MSC within the pores of the porous silicon scaffolds. Copyright © 2011 Wiley Periodicals, Inc.

  14. Modeling of block copolymer dry etching for directed self-assembly lithography

    Science.gov (United States)

    Belete, Zelalem; Baer, Eberhard; Erdmann, Andreas

    2018-03-01

    Directed self-assembly (DSA) of block copolymers (BCP) is a promising alternative technology to overcome the limits of patterning for the semiconductor industry. DSA exploits the self-assembling property of BCPs for nano-scale manufacturing and to repair defects in patterns created during photolithography. After self-assembly of BCPs, to transfer the created pattern to the underlying substrate, selective etching of PMMA (poly (methyl methacrylate)) to PS (polystyrene) is required. However, the etch process to transfer the self-assemble "fingerprint" DSA patterns to the underlying layer is still a challenge. Using combined experimental and modelling studies increases understanding of plasma interaction with BCP materials during the etch process and supports the development of selective process that form well-defined patterns. In this paper, a simple model based on a generic surface model has been developed and an investigation to understand the etch behavior of PS-b-PMMA for Ar, and Ar/O2 plasma chemistries has been conducted. The implemented model is calibrated for etch rates and etch profiles with literature data to extract parameters and conduct simulations. In order to understand the effect of the plasma on the block copolymers, first the etch model was calibrated for polystyrene (PS) and poly (methyl methacrylate) (PMMA) homopolymers. After calibration of the model with the homopolymers etch rate, a full Monte-Carlo simulation was conducted and simulation results are compared with the critical-dimension (CD) and selectivity of etch profile measurement. In addition, etch simulations for lamellae pattern have been demonstrated, using the implemented model.

  15. The memory characteristics of submicron feature-size PZT capacitors with PtOx top electrode by using dry-etching

    International Nuclear Information System (INIS)

    Huang, C.-K.; Wang, C.-C.; Wu, T.-B.

    2007-01-01

    Dry etching and its effect on the characteristics of submicron feature-size PbZr 1-x Ti x O 3 (PZT) capacitors with PtO x top electrode were investigated. The photoresist (PR)-masked PtO x films were etched by an Ar/(20%)Cl 2 /O 2 helicon wave plasma. A fence-free pattern with a significantly high etch rate and sidewall slope was obtained by the addition of O 2 into the etching gas mixture, due to the chemical instability of PtO x and the formation of a PtO 2 passivation layer to suppress redeposition of the etch by-products on the etched surface. The patterned PtO x electrode can be further used as a hard mask for etching the PZT film, subsequently, with the gas mixture of Ar, CF 4 and O 2 . A high etching rate of PZT and a good etching selectivity to PtO x can be obtained at 30% O 2 addition into the Ar/(50%)CF 4 plasma. The etched capacitors have a steep, 72 0 , sidewall angle with a clean surface. Moreover, the addition of O 2 into the etching gas can well preserve the properties and the fatigue endurance of PtO x /PZT capacitors

  16. Dry etching of LaNiO3 thin films using inductively coupled plasma

    International Nuclear Information System (INIS)

    Kim, Gwan-Ha; Kim, Dong-Pyo; Kim, Kyoung-Tae; Kim, Chang-Il; Lee, Cheol-In; Kim, Tae-Hyung

    2006-01-01

    The etching characteristics of LaNiO 3 (LNO) thin films and SiO 2 in Cl 2 /Ar plasma were investigated. LNO etch rates decreased with increasing Cl 2 fraction in Ar plasma and the working pressure. Langmuir probe measurement showed a noticeable influence of Cl 2 /Ar mixing ratio on electron temperature, electron density, and ion current density. The modeling of volume kinetics for charged particles and OES measurements for neutral atoms indicated monotonous changes of both densities and fluxes of active species such as chlorine atoms and positive ions. The LNO etch rate behavior may be explained by physical mechanisms

  17. Dry Etching of Copper Phthalocyanine Thin Films: Effects on Morphology and Surface Stoichiometry

    Directory of Open Access Journals (Sweden)

    Michael J. Brett

    2012-08-01

    Full Text Available We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, while carbon and nitrogen are depleted. Despite these changes in surface stoichiometry, we observe no effect on the work function. The absorbance and X-ray diffraction spectra show no changes other than the peaks diminishing with etch time. These findings have important implications for organic photovoltaic devices which seek nanopillar thin films of metal phthalocyanine materials as an optimal structure.

  18. Performance improvements of binary diffractive structures via optimization of the photolithography and dry etch processes

    Science.gov (United States)

    Welch, Kevin; Leonard, Jerry; Jones, Richard D.

    2010-08-01

    Increasingly stringent requirements on the performance of diffractive optical elements (DOEs) used in wafer scanner illumination systems are driving continuous improvements in their associated manufacturing processes. Specifically, these processes are designed to improve the output pattern uniformity of off-axis illumination systems to minimize degradation in the ultimate imaging performance of a lithographic tool. In this paper, we discuss performance improvements in both photolithographic patterning and RIE etching of fused silica diffractive optical structures. In summary, optimized photolithographic processes were developed to increase critical dimension uniformity and featuresize linearity across the substrate. The photoresist film thickness was also optimized for integration with an improved etch process. This etch process was itself optimized for pattern transfer fidelity, sidewall profile (wall angle, trench bottom flatness), and across-wafer etch depth uniformity. Improvements observed with these processes on idealized test structures (for ease of analysis) led to their implementation in product flows, with comparable increases in performance and yield on customer designs.

  19. Dry etching of ferroelectric Bi4-xEuxTi3O12 (BET) thin films

    International Nuclear Information System (INIS)

    Lim, Kyu-Tae; Kim, Kyoung-Tae; Kim, Dong-Pyo; Kim, Chang-Il

    2004-01-01

    Bi 4-x Eu x Ti 3 O 12 (BET) thin films were etched by using a inductively coupled Cl 2 /Ar plasma. We obtained a maximum etch rate of 69 nm/min at a gas mixing ratio of Cl 2 (20 %)/Ar (80 %). This result suggests that an effective method for BET etching is chemically assisted physical etching. With increasing coil RF power, the plasma density increases so that the increased reactive free radicals and ions enhance the etch rates of BET, Pt, and SiO 2 . As the dc-bias voltage is increased, the increased ion energy leads to an increased etch rate of BET films. From X-ray photoelectron spectroscopy, the intensities of the Bi-O, the Eu-O, and the Ti-O peaks change with increasing Cl 2 concentration. For a pure Ar plasma, the peak associated with the oxygen-metal (O-M: TiO 2 , Bi 2 O 3 , Eu 2 O 3 ) bond seems to disappear while the pure oxygen peak does not appear. After the BET thin films is etched by using a Cl 2 /Ar plasma, the peak associated with the O-M bond increases slowly, but more quickly than the peak associated with pure oxygen atoms, due to a decrease in the Ar-ion bombardment. These results seem to indicate that Bi and Eu react little with Cl atoms and are removed predominantly by argon-ion bombardment. Also, Ti reacts little with Cl radicals and is mainly removed by chemically assisted physical etching.

  20. Effect of air-drying time of single-application self-etch adhesives on dentin bond strength.

    Science.gov (United States)

    Chiba, Yasushi; Yamaguchi, Kanako; Miyazaki, Masashi; Tsubota, Keishi; Takamizawa, Toshiki; Moore, B Keith

    2006-01-01

    This study examined the effect of air-drying time of adhesives on the dentin bond strength of several single-application self-etch adhesive systems. The adhesive/resin composite combinations used were: Adper Prompt L-Pop/Filtek Z250 (AP), Clearfil Tri-S Bond/Clearfil AP-X (CT), Fluoro Bond Shake One/Beautifil (FB), G-Bond/Gradia Direct (GB) and One-Up Bond F Plus/Palfique Estelite (OF). Bovine mandibular incisors were mounted in self-curing resin and wet ground with #600 SiC to expose labial dentin. Adhesives were applied according to each manufacturer's instructions followed by air-drying time for 0 (without air-drying), 5 and 10 seconds. After light irradiation of the adhesives, the resin composites were condensed into a mold (phi4x2 mm) and polymerized. Ten samples per test group were stored in 37 degrees C distilled water for 24 hours; they were then shear tested at a crosshead speed of 1.0 mm/minute. One-way ANOVA followed by Tukey's HSD tests (alpha = 0.05) were done. FE-SEM observations of the resin/dentin interface were also conducted. Dentin bond strength varied with the different air drying times and ranged from 5.8 +/- 2.4 to 13.9 +/- 2.8 MPa for AP, 4.9 +/- 1.5 to 17.1 +/- 2.3 MPa for CT, 7.9 +/- 2.8 to 13.8 +/- 2.4 MPa for FB, 3.7 +/- 1.4 to 13.4 +/- 1.2 MPa for GB and 4.6 +/- 2.1 to 13.7 +/- 2.6 MPa for OF. With longer air drying of adhesives, no significant changes in bond strengths were found for the systems used except for OF. Significantly lower bond strengths were obtained for the 10-second air-drying group for OF. From FE-SEM observations, gaps between the cured adhesive and resin composites were observed for the specimens without the air drying of adhesives except for OF. The data suggests that, with four of the single-application self-etch adhesive systems, air drying is essential to obtain adequate dentin bond strengths, but increased drying time does not significantly influence bond strength. For the other system studied, the bond strength

  1. Flux based modeling and simulation of dry etching for fabrication of silicon deep trench structures

    Energy Technology Data Exchange (ETDEWEB)

    Malik Rizwan [State Key Laboratory of Digital Manufacturing Equipment and technology, Huazhong University of Science and Technology, 1037 Luoyu road, Wuhan, China 43007 (China); Shi Tielin; Tang Zirong; Liu Shiyuan, E-mail: zirong@mail.hust.edu.cn, E-mail: rizwanmalik@smail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 1037 Luoyu road Wuhan, 430074 (China)

    2011-02-01

    Deep reactive ion etching (DRIE) process is a key growth for fabrication of micro-electromechanical system (MEMS) devices. Due to complexity of this process, including interaction of the process steps, full analytical modeling is complex. Plasma process holds deficiency of understanding because it is very easy to measure the results empirically. However, as device parameters shrink, this issue is more critical. In this paper, our process was modeled qualitatively based on 'High Density Plasma Etch Model'. Deep trench solutions of etch rate based on continuity equation were successfully generated first time through mathematical analysis. It was also proved that the product of fluorine and gas phase concentration in SF{sub 6} remains identical during both deposition and etching stages. The etching process was treated as a combination of isotropic, directional and angle-dependent component parts. It exploited a synergistic balance of chemical as well as physical etching for promoting silicon trenches and high aspect ratio structures. Simulations were performed for comprehensive analysis of fluxes coming towards the surface during chemical reaction of gas. It is observed that near the surface, the distribution of the arrival flux follows a cosine distribution. Our model is feasible to analyze various parameters like gas delivery, reactor volume and temperature that help to assert large scale effects and to optimize equipment design.

  2. Studies of the confinement at laser-induced backside dry etching using infrared nanosecond laser pulses

    Science.gov (United States)

    Ehrhardt, M.; Lorenz, P.; Bayer, L.; Han, B.; Zimmer, K.

    2018-01-01

    In the present study, laser-induced backside etching of SiO2 at an interface to an organic material using laser pulses with a wavelength of λ = 1064 nm and a pulse length of τ = 7 ns have been performed in order to investigate selected processes involved in etching of the SiO2 at confined ablation conditions with wavelengths well below the band gap of SiO2. Therefore, in between the utilized metallic absorber layer and the SiO2 surface, a polymer interlayer with a thickness between 20 nm to 150 nm was placed with the aim, to separate the laser absorption process in the metallic absorber layer from the etching process of the SiO2 surface due to the provided organic interlayer. The influence of the confinement of the backside etching process was analyzed by the deposition of different thick polymer layers on top of the metallic absorber layer. In particular, it was found that the SiO2 etching depth decreases with higher polymer interlayer thickness. However, the etching depth increases with increasing the confinement layer thickness. SEM images of the laser processed areas show that the absorber and confinement layers are ruptured from the sample surface without showing melting, and suggesting a lift off process of these films. The driving force for the layers lift off and the etching of the SiO2 is probably the generated laser-induce plasma from the confined ablation that provides the pressure for lift off, the high temperatures and reactive organic species that can chemically attack the SiO2 surface at these conditions.

  3. Dry etching of MgCaO gate dielectric and passivation layers on GaN

    International Nuclear Information System (INIS)

    Hlad, M.; Voss, L.; Gila, B.P.; Abernathy, C.R.; Pearton, S.J.; Ren, F.

    2006-01-01

    MgCaO films grown by rf plasma-assisted molecular beam epitaxy and capped with Sc 2 O 3 are promising candidates as surface passivation layers and gate dielectrics on GaN-based high electron mobility transistors (HEMTs) and metal-oxide semiconductor HEMTs (MOS-HEMTs), respectively. Two different plasma chemistries were examined for etching these thin films on GaN. Inductively coupled plasmas of CH 4 /H 2 /Ar produced etch rates only in the range 20-70 A/min, comparable to the Ar sputter rates under the same conditions. Similarly slow MgCaO etch rates (∼100 A/min) were obtained with Cl 2 /Ar discharges under the same conditions, but GaN showed rates almost an order of magnitude higher. The MgCaO removal rates are limited by the low volatilities of the respective etch products. The CH 4 /H 2 /Ar plasma chemistry produced a selectivity of around 2 for etching the MgCaO with respect to GaN

  4. Influence of warm air-drying on enamel bond strength and surface free-energy of self-etch adhesives.

    Science.gov (United States)

    Shiratsuchi, Koji; Tsujimoto, Akimasa; Takamizawa, Toshiki; Furuichi, Tetsuya; Tsubota, Keishi; Kurokawa, Hiroyasu; Miyazaki, Masashi

    2013-08-01

    We examined the effect of warm air-drying on the enamel bond strengths and the surface free-energy of three single-step self-etch adhesives. Bovine mandibular incisors were mounted in self-curing resin and then wet ground with #600 silicon carbide (SiC) paper. The adhesives were applied according to the instructions of the respective manufacturers and then dried in a stream of normal (23°C) or warm (37°C) air for 5, 10, and 20 s. After visible-light irradiation of the adhesives, resin composites were condensed into a mold and polymerized. Ten samples per test group were stored in distilled water at 37°C for 24 h and then the bond strengths were measured. The surface free-energies were determined by measuring the contact angles of three test liquids placed on the cured adhesives. The enamel bond strengths varied according to the air-drying time and ranged from 15.8 to 19.1 MPa. The trends for the bond strengths were different among the materials. The value of the γS⁺ component increased slightly when drying was performed with a stream of warm air, whereas that of the γS⁻ component decreased significantly. These data suggest that warm air-drying is essential to obtain adequate enamel bond strengths, although increasing the drying time did not significantly influence the bond strength. © 2013 Eur J Oral Sci.

  5. Cradle-to-gate life cycle assessment of the dry etching step in the manufacturing of photovoltaic cells

    Directory of Open Access Journals (Sweden)

    Otto Andersen

    2014-11-01

    Full Text Available A new photovoltaic silicon crystalline solar cell dry chemical etching process (DCEP is developed. It is an alternative to the current State-of-the-Art (SoA wet chemical etching process (WCEP, associated with relatively large environmental loadings in the form of high water consumption and emissions of greenhouse gases with high Global Warming Potential (GWP. In order to compare the environmental impacts of DCEP to the corresponding impacts from WCEP, a comparative attributional life cycle assessment (LCA is conducted. From the LCA it can be concluded that the DCEP will lead to 86% reduction in water consumption compared to WCEP (acidic, and 89% reduction compared to WCEP (alkaline. The emissions of greenhouse gases, as expressed by the GWP100 indicator of the etching step, are also reduced with 63% and 20% respectively, when compared with current SoA acidic and alkaline WCEP. The toxicity impacts are also assessed to be lower for the DCEP compared to WCEP technologies, although the uncertainty is relatively high for the applied toxicity indicators. All in all, DCEP can reduce the CO2eq emissions of solar photovoltaic systems production by 5-10%.

  6. Effects of 3D microlens transfer into fused silica substrate by CF{sub 4}/O{sub 2} dry etching

    Energy Technology Data Exchange (ETDEWEB)

    Grigaliūnas, Viktoras, E-mail: Viktoras.Grigaliunas@ktu.lt [Institute of Materials Science, Kaunas University of Technology, Barsausko 59, LT-51423 Kaunas (Lithuania); Jucius, Dalius; Lazauskas, Algirdas; Andrulevičius, Mindaugas; Sakaliūnienė, Jolita; Abakevičienė, Brigita; Kopustinskas, Vitoldas [Institute of Materials Science, Kaunas University of Technology, Barsausko 59, LT-51423 Kaunas (Lithuania); Smetona, Saulius [Qorvo, 7628 Thorndike Road Greensboro, NC 27409 United States (United States); Tamulevičius, Sigitas [Institute of Materials Science, Kaunas University of Technology, Barsausko 59, LT-51423 Kaunas (Lithuania)

    2017-01-30

    Highlights: • The etching rate of PMMA is dependent on the plasma etching time. • The etching rate ratio between PMMA and fused silica vary during plasma treatment. • The etching rate ratio variation must be assessed during the microlens design phase. - Abstract: Nowadays, 3D microoptical elements find a variety of applications from light emitting diodes and household appliances to precise medical endoscopes. Such elements, fabricated in a fused silica substrate by combining 3D e-beam patterning and dry etching, can be used as a mold for the high throughput replication in polymeric materials by UV nanoimprint technique. Flexible and precise control of 3D shape in the resist layer can be achieved by e-beam patterning, but it is also very important to know peculiarities of 3D pattern transfer from resist layer into the fused silica substrate. This paper reports on the effects of PMMA 3D microlens pattern transfer into fused silica substrate by CF{sub 4}/O{sub 2} dry etching. It is demonstrated that etching rate ratio between PMMA and fused silica changes during plasma treatment. Thus, the resulting shape of transferred 3D profile is different from the shape in PMMA and this variation must be assessed during the design phase.

  7. Dry Etch Black Silicon with Low Surface Damage: Effect of Low Capacitively Coupled Plasma Power

    DEFF Research Database (Denmark)

    Iandolo, Beniamino; Plakhotnyuk, Maksym; Gaudig, Maria

    2017-01-01

    Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we pr...... carrier lifetime thanks to reduced ion energy. Surface passivation using atomic layer deposition of Al2O3 improves the effective lifetime to 7.5 ms and 0.8 ms for black silicon n- and p-type wafers, respectively.......Black silicon fabricated by reactive ion etch (RIE) is promising for integration into silicon solar cells thanks to its excellent light trapping ability. However, intensive ion bombardment during the RIE induces surface damage, which results in enhanced surface recombination velocity. Here, we...... present a RIE optimization leading to reduced surface damage while retaining excellent light trapping and low reflectivity. In particular, we demonstrate that the reduction of the capacitively coupled power during reactive ion etching preserves a reflectance below 1% and improves the effective minority...

  8. Effect of a Cooling Step Treatment on a High-Voltage GaN LED During ICP Dry Etching

    Science.gov (United States)

    Lin, Yen-Sheng; Hsiao, Sheng-Yu; Tseng, Chun-Lung; Shen, Ching-Hsing; Chiang, Jung-Sheng

    2017-02-01

    In this study, a lower dislocation density for a GaN surface and a reduced current path are observed at the interface of a SiO2 isolation sidewall, using high-resolution transmission electron microscopy. This is grown using a 3-min cooling step treatment during inductivity coupled plasma dry etching. The lower forward voltage is measured, the leakage current decreases from 53nA to 32nA, and the maximum output power increases from 354.8 W to 357.2 W for an input current of 30 mA. The microstructure and the optoelectronic properties of high-voltage light-emitting-diodes is proven to be affected by the cooling step treatment, which allows enough time to release the thermal energy of the SiO2 isolation well.

  9. Regrowth of InP by MOVPE on dry-etched heterostructures of InP-GaInAsP

    Energy Technology Data Exchange (ETDEWEB)

    Catana, A. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Broom, R.F. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Germann, R. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland)); Roentgen, P. (IBM Research Div., Zurich Research Lab., Rueschlikon (Switzerland))

    1993-04-01

    The MOVPE growth behavior of InP on masked and dry-etched ridges in InP/InGaAsP heterostructures grown on (001)-oriented InP substrates has been studied by scanning electron and transmission electron microscopy. It is found that the orientation of the ridges is critical for obtaining good planarization. For ridges oriented along the 100 direction, the growth is uniform and defect-free, leasing to a plane surface. In the orthogonal 110 direction 60 twins are nucleated adjacent to the walls of the ridge. The resultant high density of (111)/(001) facets enhances the growth rate in these regions, leading to projecting walls at the sides of the ridge. (orig.)

  10. Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures

    KAUST Repository

    Zong, Baoyu; Goh, J. Y.; Guo, Zaibing; Luo, Ping; Wang, Chenchen; Qiu, Jinjun; Ho, Pin; Chen, Yunjie; Zhang, Mingsheng; Han, Guchang

    2013-01-01

    A novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half

  11. Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

    International Nuclear Information System (INIS)

    Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

    2007-01-01

    The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

  12. Growth of ZnO nanowire arrays directly onto Si via substrate topographical adjustments using both wet chemical and dry etching methods

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Nathan A., E-mail: 523615@swansea.ac.uk [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom); Evans, Jon E.; Jones, Daniel R. [Multidisciplinary Nanotechnology Centre, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Lord, Alex M. [Centre for Nanohealth, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Wilks, S.P. [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom)

    2015-03-15

    Highlights: • Arrays of catalyst-free ZnO NWs have been grown by CVD without seed layers on Si. • Si surface topography was altered by substrate etching, resulting in NW growth. • XPS analysis shows growth is related to topography and not surface contamination. • Using e-beam lithography with etching, selective nanowire growth is demonstrated. • Electrical measurements on the arrays show improved conduction through the Si. - Abstract: Arrays of CVD catalyst-free ZnO nanowires have been successfully grown without the use of seed layers, using both wet chemical and dry plasma etching methods to alter surface topography. XPS analysis indicates that the NW growth cannot be attributed to a substrate surface chemistry and is therefore directly related to the substrate topography. These nanowires demonstrate structural and optical properties typical of CVD ZnO nanowires. Moreover, the NW arrays exhibit a degree of vertical alignment of less than 20° from the substrate normal. Electrical measurements suggest an improved conduction path through the substrate over seed layer grown nanowires. Furthermore, the etching technique was combined with e-beam lithography to produce high resolution selective area nanowire growth. The ability to pattern uniform nanowires using mature dry etch technology coupled with the increased charge transport through the substrate demonstrates the potential of this technique in the vertical integration of nanowire arrays.

  13. Fabrication of Light Extraction Efficiency of Organic Light-Emitting Diodes with 3D Aspherical Microlens by Using Dry Etching Process

    Directory of Open Access Journals (Sweden)

    Y. C. Chen

    2013-01-01

    Full Text Available organic light-emitting diode (OLED can enable a greater artificial contrast ratio and viewing angle compared to liquid crystal display (LCD because OLED pixels directly emit light. There is a shortcoming that the internal quantum efficiency can reach values close to 100%, but about 80% light disperses because of the difference among the refractive indices of the substrate, anode, indium tin oxide (ITO film, and air. In this paper, three dimensions aspherical microlens arrays (3D A-MLAs with substrate modifications are developed to simulate the optical luminous field by using FRED software. This study modified parameters of 3D A-MLAs such as the diameter, fill-factor, aspect ratio, dry etching parameters, and electroforming rates of microlens to improve the extraction efficiency of the OLED. In dry etching, not only the aspect ratio with better extraction rate can be obtained by reactive ion etching (RIE dry etching, but also an undercutting phenomenon can be avoided. The dimensions of 3D A-MLAs can be accurately controlled in the electroforming process used to make a nickel-cobalt (Ni-Co metal mold to achieve the designed dimensions. According to the measured results, the average luminance efficacy of the OLEDs with 3D A-MLAs can be enhanced.

  14. Iridium-coated micropore x-ray optics using dry etching of a silicon wafer and atomic layer deposition.

    Science.gov (United States)

    Ogawa, Tomohiro; Ezoe, Yuichiro; Moriyama, Teppei; Mitsuishi, Ikuyuki; Kakiuchi, Takuya; Ohashi, Takaya; Mitsuda, Kazuhisa; Putkonen, Matti

    2013-08-20

    To enhance x-ray reflectivity of silicon micropore optics using dry etching of silicon (111) wafers, iridium coating is tested by use of atomic layer deposition. An iridium layer is successfully formed on sidewalls of tiny micropores with a pore width of 20 μm and depth of 300 μm. The film thickness is ∼20  nm. An enhanced x-ray reflectivity compared to that of silicon is confirmed at Ti Kα 4.51 keV, for what we believe to be the first time, with this type of optics. Some discrepancies from a theoretical reflectivity curve of iridium-coated silicon are noticed at small incident angles <1.3°. When a geometrical shadowing effect due to occultation by a ridge existing on the sidewalls is taken into account, the observed reflectivity becomes well represented by the modified theoretical curve. An estimated surface micro roughness of ∼1  nm rms is consistent with atomic force microscope measurements of the sidewalls.

  15. Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures

    KAUST Repository

    Zong, Baoyu

    2013-05-20

    A novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half-pitch without alignment issues. Depending on the different dry-etch mechanisms in transferring high and low density nanopatterns, suitable dry-etch angles and methods are studied for the transfer of high density nanopatterns. Some novel process methods have also been developed to eliminate the sidewall and other conversion obstacles for obtaining high density of uniform metallic nanopatterns. With these methods, ultrahigh density trilayer crossbar devices (∼2 × 1010 bit cm-2-kilobit electronic memory), which are composed of built-in practical magnetoresistive nanocells, have been achieved. This scalable process that we have developed provides the relevant industries with a cheap means to commercially fabricate three-dimensional high density metal-cell-metal nanodevices. © 2013 IOP Publishing Ltd.

  16. Deeply bound pionic atom

    International Nuclear Information System (INIS)

    Toki, Hiroshi; Yamazaki, Toshimitsu

    1989-01-01

    The standard method of pionic atom formation does not produce deeply bound pionic atoms. A study is made on the properties of deeply bound pionic atom states by using the standard pion-nucleus optical potential. Another study is made to estimate the cross sections of the formation of ls pionic atom states by various methods. The pion-nucleus optical potential is determined by weakly bound pionic atom states and pion nucleus scattering. Although this potential may not be valid for deeply bound pionic atoms, it should provide some hint on binding energies and level widths of deeply bound states. The width of the ls state comes out to be 0.3 MeV and is well separated from the rest. The charge dependence of the ls state is investigated. The binding energies and the widths increase linearly with Z azbove a Z of 30. The report then discusses various methods to populate deeply bound pionic atoms. In particular, 'pion exchange' reactions are proposed. (n, pπ) reaction is discussed first. The cross section is calculated by assuming the in- and out-going nucleons on-shell and the produced pion in (n1) pionic atom states. Then, (n, dπ - ) cross sections are estimated. (p, 2 Heπ - ) reaction would have cross sections similar to the cross section of (n, dπ - ) reaction. In conclusion, it seems best to do (n, p) experiment on heavy nuclei for deeply bound pionic atom. (Nogami, K.)

  17. Fabrication of combined-scale nano- and microfluidic polymer systems using a multilevel dry etching, electroplating and molding process

    DEFF Research Database (Denmark)

    Tanzi, Simone; Østergaard, Peter Friis; Matteucci, Marco

    2012-01-01

    Microfabricated single-cell capture and DNA stretching devices have been produced by injection molding. The fabrication scheme employed deep reactive ion etching in a silicon substrate, electroplating in nickel and molding in cyclic olefin polymer. This work proposes technical solutions to fabric......Microfabricated single-cell capture and DNA stretching devices have been produced by injection molding. The fabrication scheme employed deep reactive ion etching in a silicon substrate, electroplating in nickel and molding in cyclic olefin polymer. This work proposes technical solutions...

  18. Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Landesman, Jean-Pierre, E-mail: jean-pierre.landesman@univ-rennes1.fr [Institut de Physique de Rennes, CNRS-UMR 6251, Université Rennes 1, F-35042 Rennes (France); Jiménez, Juan; Torres, Alfredo [GdS Optronlab, Dpto. Fisica de la Materia Condensada, Universidad de Valladolid, 47011 Valladolid (Spain); Levallois, Christophe; Léger, Yoan; Beck, Alexandre [UMR FOTON, CNRS, INSA-Rennes, 20 avenue des buttes de Coësmes, F-35708 Rennes (France); Pommereau, Frédéric [III-V Lab, 1 Avenue Augustin Fresnel, RD128, F-91767 Palaiseau (France); Frigeri, Cesare [CNR-IMEM Istituto, Parco area delle Scienze 37/A, 43010 Parma (Italy); Rhallabi, Ahmed [Institut des Matériaux Jean-Rouxel, CNRS-UMR 6502, Université Nantes 1, F-44322 Nantes (France)

    2016-07-15

    The general objective is the investigation of the defects formed by dry etching tools such as those involved in the fabrication of photonic devices with III–V semiconductors. Emphasis is put on plasma exposures with chlorine-based chemistries. In addition to identifying these defects and describing their effects on the electro-optic and structural properties, the long-term target would be to predict the impact on the parameters of importance for photonic devices, and possibly include these predictions in their design. The work is first centered on explaining the experimental methodology. This methodology starts with the design and growth of a quantum well structure on indium phosphide, including ternary indium arsenide/phosphide quantum wells with graded arsenic/phosphor composition. These samples have then been characterized by luminescence methods (photo- and cathodoluminescence), high-resolution transmission electron microscopy, and secondary ion mass spectrometry. As one of the parameters of importance in this study, the authors have also included the doping level. The samples have been exposed to the etching plasmas for “short” durations that do not remove completely the quantum wells, but change their optical signature. No masking layer with lithographic features was involved as this work is purely oriented to study the interaction between the plasma and the samples. A significant difference in the luminescence spectra of the as-grown undoped and doped samples is observed. A mechanism describing the effect of the built-in electric field appearing as a consequence of the doping profile is proposed. This mechanism involves quantum confined Stark effect and electric-field induced carrier escape from the quantum wells. In the following part, the effects of exposure to various chlorine-based plasmas were explored. Differences are again observed between the undoped and doped samples, especially for chemistries containing silicon tetrachloride. Secondary ion

  19. Deeply Virtual Neutrino Scattering

    International Nuclear Information System (INIS)

    Ales Psaker

    2007-01-01

    We investigate the extension of the deeply virtual Compton scattering process into the weak interaction sector. Standard electromagnetic Compton scattering provides a unique tool for studying hadrons, which is one of the most fascinating frontiers of modern science. In this process the relevant Compton scattering amplitude probes the hadron structure by means of two quark electromagnetic currents. We argue that replacing one of the currents with the weak interaction current can promise a new insight. The paper is organized as follows. In Sec. II we briefly discuss the features of the handbag factorization scheme. We introduce a new set of phenomenological functions, known as generalized parton distributions (GPDs) [1-6], and discuss some of their basic properties in Sec. III. An application of the GPD formalism to the neutrino-induced deeply virtual Compton scattering in the kinematics relevant to future high-intensity neutrino experiments is given in Sec. IV. The cross section results are presented in Sec. V. Finally, in Sec. VI we draw some conclusions and discuss future prospects. Some of the formal results in this paper have appeared in preliminary reports in Refs. [7] and [8], whereas a comprehensive analysis of the weak neutral and weak charged current DVCS reactions in collaboration with W. Melnitchouk and A. Radyushkin has been presented in Ref. [9

  20. Fiscal 2000 achievement report on the investigation of alternative gas system and process technologies for dry etching in electronic device manufacturing; 2000 nendo denshi device seizo process de shiyosuru etching gas no daitai gas system oyobi daitai process no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    Efforts are made to develop technologies for saving PFC (perfluoro-compound) and conserving energy in semiconductor manufacturing processes, in particular, in the layer insulation film (SiO{sub 2}) dry etching process. Activities are conducted in the five fields of (1) research and development of technologies for reducing the amount of etching gas consumption, (2) development of a dry etching technology using alternative gas, (3) development of a dry etching technology using a low dielectric constant layer insulation film, (4) research and development of novel wiring structures and a method for fabricating the same, and (5) re-entrusted studies. Conducted in field (5) are studies of novel alternative gas - solid sources to substitute PFC, theory design technologies for low dielectric constant organic macromolecules, low dielectric constant material film fabrication by CVD (chemical vapor deposition), and technology for optical wiring inside chips. In field (2), studies are conducted of low GWP (global warming potential) alternative PFC gas aided etching and decomposition prevention technologies for reduction in PFC emissions, and it is made clear that C{sub 4}F{sub 6} performs excellently as an etchant. (NEDO)

  1. Dry fabrication of microdevices by the combination of focused ion beam and cryogenic deep reactive ion etching

    International Nuclear Information System (INIS)

    Chekurov, N; Tittonen, I; Grigoras, K; Sainiemi, L; Franssila, S; Peltonen, A

    2010-01-01

    In this paper, we demonstrate silicon microdevice fabrication by a combination of focused ion beam (FIB) and cryogenic deep reactive ion etching (DRIE). Applying FIB treatment only to a thin surface layer enables very high writing speed compared with FIB milling. The use of DRIE then defines the micro- and nanodevices utilizing the FIB-modified silicon as a mask. We demonstrate the ability to create patterns on highly 3D structures, which is extremely challenging by other nanofabrication methods. The alignment of optically made and FIB-defined patterns is also demonstrated. We also show that complete microelectromechanical systems (MEMS) can be fabricated by this method by presenting a double-ended tuning fork resonator as an example. Extremely short process time is achieved as the full fabrication cycle from mask design to electrical measurements can be completed during one working day.

  2. Effects of drying agents on bond strength of etch-and-rinse adhesive systems to enamel immediately after bleaching.

    Science.gov (United States)

    Niat, Alireza Boruzi; Yazdi, Fatmeh Maleknejad; Koohestanian, Niloufar

    2012-12-01

    To determine the effect of drying agents and adhesive solvents on the bond strength of resin composite to enamel immediately after bleaching. Sixty healthy human premolars were bleached using 15% carbamide peroxide gel and randomly divided into three groups according to the immersing solutions applied immediately after bleaching: 70% alcohol, acetone, and distilled water. Each group was randomly divided into two subgroups according to the adhesives that were applied: an alcohol-based adhesive (Single Bond) and an acetone-based adhesive (One Step). By using rubber washers, composite Z100 was placed onto the enamel and shear bond strength was evaluated in a universal testing machine at a crosshead speed of 1 mm/min. The type of failure was also assessed using a stereomicroscope. The data were statistically analyzed by two-way ANOVA and Tukey's post-hoc test (α = 0.05). Fisher's Exact test was used to evaluate differences in the failure modes. Statistical analysis showed that the bond strength of the distilled water groups was significantly lower than that of the other groups, but the bond strengths of the two groups where a drying agent was applied were similar to that of the unbleached group. The acetone-based adhesive (One Step) provided higher bond strength than did the alcohol-based adhesive (Single Bond) (p 0.05). Fisher's Exact test showed there was no significant difference in the failure mode of all the experimental groups (p > 0.05). The application of drying agents improves the bond strength of resin composite to bleached enamel. Furthermore, the acetone-based adhesive used in the study had a higher bond strength to bleached enamel than did the alcohol-based adhesive used.

  3. Weak Deeply Virtual Compton Scattering

    International Nuclear Information System (INIS)

    Ales Psaker; Wolodymyr Melnitchouk; Anatoly Radyushkin

    2006-01-01

    We extend the analysis of the deeply virtual Compton scattering process to the weak interaction sector in the generalized Bjorken limit. The virtual Compton scattering amplitudes for the weak neutral and charged currents are calculated at the leading twist within the framework of the nonlocal light-cone expansion via coordinate space QCD string operators. Using a simple model, we estimate cross sections for neutrino scattering off the nucleon, relevant for future high intensity neutrino beam facilities

  4. Self-aligned mask renewal for anisotropically etched circular micro- and nanostructures

    International Nuclear Information System (INIS)

    Kaspar, Peter; Jäckel, Heinz; Holzapfel, Sebastian; Windhab, Erich J

    2011-01-01

    The top–down fabrication of high aspect ratio circular micro- and nanostructures in silicon nitride is presented. A new method is introduced to increase the aspect ratio of anisotropically etched holes by a factor of more than two with respect to the results obtained from an established dry-etching process. The method is based on the renewal of an etching mask after a first etching step has been completed. Mask renewal is done by line-of-sight deposition of a masking layer on the surface of the sample, which is mounted at an angle with respect to the deposition direction. No additional alignment step is required. The proof of principle is performed for silicon nitride etching through a mask of titanium, but the method has great potential to be applicable to a wide variety of substrate–mask combinations and to find entrance into various engineering fields. Two specific applications are highlighted. Firstly, a thick silicon nitride hardmask is used for the fabrication of deeply etched photonic crystal holes in indium phosphide (InP). For holes of 280 nm diameter, a record aspect ratio of 20 and an overall selectivity of 28.5 between a positive-tone resist layer and InP are reported. Secondly, the use of perforated silicon nitride membranes for droplet formation for applications in food engineering or pharmaceutics is addressed. Preliminary results show a potential for the self-aligned mask renewal method to exceed state-of-the-art membrane quality in terms of pore size, aspect ratio and membrane stability.

  5. Preparation and analysis of amorphous carbon films deposited from (C{sub 6}H{sub 12})/Ar/He chemistry for application as the dry etch hard mask in the semiconductor manufacturing process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Seungmoo [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of); TC Technology Team, Samsung Electronics Co. Ltd., Gyeounggi-Do, 446-711 (Korea, Republic of); Won, Jaihyung; Choi, Jongsik [TC Technology Team, Samsung Electronics Co. Ltd., Gyeounggi-Do, 446-711 (Korea, Republic of); Jang, Samseok [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of); Jee, Yeonhong; Lee, Hyeondeok [TC Technology Team, Samsung Electronics Co. Ltd., Gyeounggi-Do, 446-711 (Korea, Republic of); Byun, Dongjin, E-mail: dbyun@korea.ac.kr [Department of Materials Science and Engineering, Korea University, Seoul, 136-701 (Korea, Republic of)

    2011-08-01

    Amorphous carbon layers (ACL) were deposited on Si (100) wafers by plasma enhanced chemical vapor deposition (PECVD) by using 1-hexene (C{sub 6}H{sub 12}) as a carbon source for dry etch hard mask of semiconductor devices manufacturing process. The deposition characteristics and film properties were investigated by means of ellipsometry, Raman spectroscopy, X-ray photo electron spectroscopy (XPS) and stress analysis. Hardness, Young's modulus, and surface roughness of ACL deposited at 550 deg. C were investigated by using nano-indentation and AFM. The deposition rate was decreased from 5050 A/min to 2160 A/min, and dry etch rate was decreased from 2090 A/min to 1770 A/min, and extinction coefficient was increased from 0.1 to 0.5. Raman analysis revealed a higher shift of the G-peak and a lower shift of the D-peak and the increase of I(D)/I(G) ratio as the deposition temperature was increased from 350 deg. C to 550 deg. C. XPS results of ACL deposited at 550 deg. C revealed a carbon 1s binding energy of 284.4 eV. The compressive film stress was decreased from 2.95 GPa to 1.28 GPa with increasing deposition temperature. The hardness and Young's modulus of ACL deposited at 550 deg. C were 5.8 GPa and 48.7 GPa respectively. The surface roughness RMS of ACL deposited at 550 deg. C was 2.24 A, and that after cleaning in diluted HF solution (H{sub 2}O:HF = 200:1), SC1 (NH{sub 4}OH:H{sub 2}O{sub 2}:H{sub 2}O = 1:4:20) solution, and sulfuric acid solution (H{sub 2}SO{sub 4}:H{sub 2}O{sub 2} = 6:1) was 2.28 A, 2.30 A and 7.34 A, respectively. The removal amount of ACL deposited at 550 deg. C in diluted HF solution, SC1 solution and sulfuric acid solution was 6 A, 36 A and 110 A, respectively. These results demonstrated the viability of ACL deposited by PECVD from C{sub 6}H{sub 12} at 550 deg. C for application as the dry etch hard mask in fabrication of semiconductor devices.

  6. Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates

    International Nuclear Information System (INIS)

    Oikawa, Takeshi; Ishikawa, Fumitaro; Sato, Taketomo; Hashizume, Tamotsu; Hasegawa, Hideki

    2005-01-01

    This paper attempts to form AlGaN/GaN quantum wire (QWR) network structures on patterned GaN (0001) substrates by selective molecular beam epitaxy (MBE) growth. Substrate patterns were prepared along - and -directions by electron cyclotron resonance assisted reactive-ion beam etching (ECR-RIBE) process. Selective growth was possible for both directions in the case of GaN growth, but only in the -direction in the case of AlGaN growth. A hexagonal QWR network was successfully grown on a hexagonal mesa pattern by combining the -direction and two other equivalent directions. AFM observation confirmed excellent surface morphology of the grown network. A clear cathodoluminescence (CL) peak coming from the embedded AlGaN/GaN QWR structure was clearly identified

  7. Deeply virtual Compton scattering. Results and future

    International Nuclear Information System (INIS)

    Nowak, W.D.

    2005-03-01

    Access to generalised parton distributions (GPDs) through deeply virtual Compton scattering (DVCS) is briefly described. Presently available experimental results on DVCS are summarized in conjunction with plans for future measurements. (orig.)

  8. Plasma Etching of Tapered Features in Silicon for MEMS and Wafer Level Packaging Applications

    International Nuclear Information System (INIS)

    Ngo, H-D; Hiess, Andre; Seidemann, Volker; Studzinski, Daniel; Lange, Martin; Leib, Juergen; Shariff, Dzafir; Ashraf, Huma; Steel, Mike; Atabo, Lilian; Reast, Jon

    2006-01-01

    This paper is a brief report of plasma etching as applied to pattern transfer in silicon. It will focus more on concept overview and strategies for etching of tapered features of interest for MEMS and Wafer Level Packaging (WLP). The basis of plasma etching, the dry etching technique, is explained and plasma configurations are described elsewhere. An important feature of plasma etching is the possibility to achieve etch anisotropy. The plasma etch process is extremely sensitive to many variables such as mask material, mask openings and more important the plasma parameters

  9. Inductively coupled plasma etching of III-V antimonides in BCl3/SiCl4 etch chemistry

    International Nuclear Information System (INIS)

    Swaminathan, K.; Janardhanan, P.E.; Sulima, O.V.

    2008-01-01

    Inductively coupled plasma etching of GaSb using BCl 3 /SiCl 4 etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved (∼ 4 μm/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth ∼ 90 μm. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range

  10. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  11. Future measurements of deeply virtual Compton scattering

    International Nuclear Information System (INIS)

    Korotkov, V.A.; Nowak, W.D.

    2001-09-01

    Prospects for future measurements of Deeply Virtual Compton Scattering are studied using different simple models for parameterizations of generalized parton distributions (GPDs). Measurements of the lepton charge and lepton beam helicity asymmetry will yield important input for theoretical models towards the future extraction of GPDs. The kinematics of the HERMES experiment, complemented with a recoil detector, was adopted to arrive at realistic projected statistical uncertainties. (orig.)

  12. Controlled ion track etching

    Science.gov (United States)

    George, J.; Irkens, M.; Neumann, S.; Scherer, U. W.; Srivastava, A.; Sinha, D.; Fink, D.

    2006-03-01

    It is a common practice since long to follow the ion track-etching process in thin foils via conductometry, i.e . by measurement of the electrical current which passes through the etched track, once the track breakthrough condition has been achieved. The major disadvantage of this approach, namely the absence of any major detectable signal before breakthrough, can be avoided by examining the track-etching process capacitively. This method allows one to define precisely not only the breakthrough point before it is reached, but also the length of any non-transient track. Combining both capacitive and conductive etching allows one to control the etching process perfectly. Examples and possible applications are given.

  13. Plasma etching of patterned tungsten

    International Nuclear Information System (INIS)

    Franssila, S.

    1993-01-01

    Plasma etching of tungsten is discussed from the viewpoint of thin film structure and integrated circuit process engineering. The emphasis is on patterned tungsten etching for silicon device and X-ray mask fabrication. After introducing tungsten etch chemistries and mechanisms, microstructural aspects of tungsten films (crystal structure, grain size, film density, defects, impurities) in relation to etching are discussed. Approaches to etch process optimization are presented, and the current state-of-the-art of patterned tungsten etching is reviewed. (orig.)

  14. Etching in microsystem technology

    CERN Document Server

    Kohler, Michael

    2008-01-01

    Microcomponents and microdevices are increasingly finding application in everyday life. The specific functions of all modern microdevices depend strongly on the selection and combination of the materials used in their construction, i.e., the chemical and physical solid-state properties of these materials, and their treatment. The precise patterning of various materials, which is normally performed by lithographic etching processes, is a prerequisite for the fabrication of microdevices.The microtechnical etching of functional patterns is a multidisciplinary area, the basis for the etching p

  15. Etching method employing radiation

    International Nuclear Information System (INIS)

    Chapman, B.N.; Winters, H.F.

    1982-01-01

    This invention provides a method for etching a silicon oxide, carbide, nitride, or oxynitride surface using an electron or ion beam in the presence of a xenon or krypton fluoride. No additional steps are required after exposure to radiation

  16. Device fabrication by plasma etching

    International Nuclear Information System (INIS)

    Mogab, C.J.

    1980-01-01

    Plasma etching as applied to many of the materials encountered in the fabrication of LSI's is complicated by loading effect-the dependence of etch rate on the integrated surface area to be etched. This problem is alleviated by appropriate choice of etchant and etching conditions. Appropriate choice of system parameters, generally most concerned with the inherent lifetime of etchant species, may also result in improvement of etch rate uniformity on a wafer-by-wafer basis

  17. Colagem ortodôntica em esmalte com presença ou ausência de contaminação salivar: é necessário o uso de adesivo auto-condicionante ou de adesivo hidrofílico? Orthodontic bonding in dry and saliva contaminated enamel: is a self-etching primer or a moisture-insensitive primer necessary?

    Directory of Open Access Journals (Sweden)

    Cristiane Becher Rosa

    2008-06-01

    Full Text Available OBJETIVO: o objetivo deste trabalho foi avaliar a resistência ao cisalhamento da colagem ortodôntica de um adesivo hidrofílico (Transbond Moisture-Insensitive Primer, 3M Unitek, Monrovia, Califórnia, de um adesivo auto-condicionante (Transbond Self-Etching Primer, 3M Unitek, Monrovia, Califórnia, e sem uso de adesivo, em superfícies de esmalte secas ou contaminadas por saliva. METODOLOGIA: incisivos bovinos (60 foram divididos em 6 grupos: (1 controle sem contaminação salivar (sem adesivo, (2 controle com contaminação salivar (sem adesivo, (3 adesivo auto-condicionante sem contaminação salivar, (4 adesivo auto-condicionante com contaminação salivar antes do adesivo, (5 adesivo hidrofílico sem contaminação salivar e (6 adesivo hidrofílico com contaminação salivar antes do adesivo. Braquetes metálicos foram colados com compósito (Transbond XT, 3M Unitek, Monrovia, Califórnia. Após a colagem, os corpos-de prova foram armazenados a 37±1ºC em ambiente úmido até a realização do teste de cisalhamento. Diferença estatística foi determinada com valor de probabilidade de 0,05 ou menos (p AIM: The purpose of this study was to evaluate the shear bond strength of orthodontic bonding with the use of a hydrophilic primer (Transbond Moisture-Insensitive Primer, 3M Unitek, Monrovia, Calif., a self-etching primer (Transbond Plus Self-etching Primer, 3M Unitek, Monrovia, Calif. and without primer application, in dry and saliva contaminated enamel surfaces. METHODS: Bovine incisors (60 were divided into 6 groups: (1 uncontaminated control (no primer, (2 control with saliva contamination (no primer, (3 uncontaminated self-etching primer, (4 saliva contamination before self-etching primer, (5 uncontaminated hydrophilic primer and (6 saliva contamination before hydrophilic primer. Stainless steel brackets were bonded with composite resin (Transbond XT, 3M Unitek, Monrovia, Calif.. After bonding, all samples were stored at 37±1°C in a

  18. Inductively coupled plasma etching of III-V antimonides in BCl{sub 3}/SiCl{sub 4} etch chemistry

    Energy Technology Data Exchange (ETDEWEB)

    Swaminathan, K. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)], E-mail: swaminak@ece.osu.edu; Janardhanan, P.E.; Sulima, O.V. [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)

    2008-10-01

    Inductively coupled plasma etching of GaSb using BCl{sub 3}/SiCl{sub 4} etch chemistry has been investigated. The etch rates were studied as a function of bias power, inductively coupled plasma source power, plasma chemistry and chamber pressure. The etched surfaces remain smooth and stoichiometric over the entire range of plasma conditions investigated. The knowledge gained in etching GaSb was applied to etching AlGaAsSb and InGaAsSb in order to fabricate heterojunction phototransistors. As expected, InGaAsSb etch rate was much lower compared to the corresponding value for GaSb, mainly due to the relatively low volatility of indium chlorides. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb was close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based mid-infrared laser diodes. The surface roughness and the etch profile were examined for the etched GaSb, AlGaAsSb and InGaAsSb samples using scanning electron microscope. The high etch rates achieved ({approx} 4 {mu}m/min) facilitated deep etching of GaSb. A single layer, soft mask (AZ-4903 photoresist) was used to etch GaSb, with etch depth {approx} 90 {mu}m. The deep dry etching of GaSb has many important applications including etching substrate windows for backside-illuminated photodetectors for the mid-infrared wavelength range.

  19. Deeply virtual Compton scattering at Jefferson Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Biselli, Angela S. [Fairfield University - Department of Physics 1073 North Benson Road, Fairfield, CT 06430, USA; Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)

    2016-08-01

    The generalized parton distributions (GPDs) have emerged as a universal tool to describe hadrons in terms of their elementary constituents, the quarks and the gluons. Deeply virtual Compton scattering (DVCS) on a proton or neutron ($N$), $e N \\rightarrow e' N' \\gamma$, is the process more directly interpretable in terms of GPDs. The amplitudes of DVCS and Bethe-Heitler, the process where a photon is emitted by either the incident or scattered electron, can be accessed via cross-section measurements or exploiting their interference which gives rise to spin asymmetries. Spin asymmetries, cross sections and cross-section differences can be connected to different combinations of the four leading-twist GPDs (${H}$, ${E}$, ${\\tilde{H}}$, ${\\tilde{E}}$) for each quark flavors, depending on the observable and on the type of target. This paper gives an overview of recent experimental results obtained for DVCS at Jefferson Laboratory in the halls A and B. Several experiments have been done extracting DVCS observables over large kinematics regions. Multiple measurements with overlapping kinematic regions allow to perform a quasi-model independent extraction of the Compton form factors, which are GPDs integrals, revealing a 3D image of the nucleon.

  20. Scaling limit of deeply virtual Compton scattering

    Energy Technology Data Exchange (ETDEWEB)

    A. Radyushkin

    2000-07-01

    The author outlines a perturbative QCD approach to the analysis of the deeply virtual Compton scattering process {gamma}{sup *}p {r_arrow} {gamma}p{prime} in the limit of vanishing momentum transfer t=(p{prime}{minus}p){sup 2}. The DVCS amplitude in this limit exhibits a scaling behavior described by a two-argument distributions F(x,y) which specify the fractions of the initial momentum p and the momentum transfer r {equivalent_to} p{prime}{minus}p carried by the constituents of the nucleon. The kernel R(x,y;{xi},{eta}) governing the evolution of the non-forward distributions F(x,y) has a remarkable property: it produces the GLAPD evolution kernel P(x/{xi}) when integrated over y and reduces to the Brodsky-Lepage evolution kernel V(y,{eta}) after the x-integration. This property is used to construct the solution of the one-loop evolution equation for the flavor non-singlet part of the non-forward quark distribution.

  1. Single-crystal silicon trench etching for fabrication of highly integrated circuits

    Science.gov (United States)

    Engelhardt, Manfred

    1991-03-01

    The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

  2. Deeply virtual Compton scattering off "4He

    International Nuclear Information System (INIS)

    Hattawy, M.

    2015-01-01

    The "4He nucleus is of particular interest to study nuclear GPDs (Generalized Parton Distributions) as its partonic structure is described by only one chirally-even GPD. It is also a simple few-body system and has a high density that makes it the ideal target to investigate nuclear effects on partons. The experiment described in this thesis is JLab-E08-24, which was carried out in 2009 by the CLAS collaboration during the 'EG6' run. In this experiment, a 6 GeV longitudinally-polarized electron beam was scattered onto a 6 atm "4He gaseous target. During this experiment, in addition to the CLAS detector, a Radial Time Projection Chamber (RTPC), to detect low-energy nuclear recoils, and an Inner Calorimeter (IC), to improve the detection of photons at very forward angles, were used. We carried out a full analysis on our 6 GeV dataset, showing the feasibility of measuring exclusive nuclear Deeply Virtual Compton Scattering (DVCS) reactions. The analysis included: the identification of the final-state particles, the DVCS event selection, the π"0 background subtraction. The beam-spin asymmetry was then extracted for both DVCS channels and compared to the ones of the free-proton DVCS reaction, and to theoretical predictions from two models. Finally, the real and the imaginary parts of the "4He CFF (Compton Form Factor) HA have been extracted. Different levels of agreement were found between our measurements and the theoretical calculations. This thesis is organized as follows: In chapter 1, the available theoretical tools to study hadronic structure are presented, with an emphasis on the nuclear effects and GPDs. In chapter 2, the characteristics of the CLAS spectrometer are reviewed. In chapter 3, the working principle and the calibration aspects of the RTPC are discussed. In chapter 4, the identification of the final-state particles and the Monte-Carlo simulation are presented. In chapter 5, the selection of the DVCS events, the background subtraction, and uncertainty

  3. Metal-assisted etch combined with regularizing etch

    Energy Technology Data Exchange (ETDEWEB)

    Yim, Joanne; Miller, Jeff; Jura, Michael; Black, Marcie R.; Forziati, Joanne; Murphy, Brian; Magliozzi, Lauren

    2018-03-06

    In an aspect of the disclosure, a process for forming nanostructuring on a silicon-containing substrate is provided. The process comprises (a) performing metal-assisted chemical etching on the substrate, (b) performing a clean, including partial or total removal of the metal used to assist the chemical etch, and (c) performing an isotropic or substantially isotropic chemical etch subsequently to the metal-assisted chemical etch of step (a). In an alternative aspect of the disclosure, the process comprises (a) performing metal-assisted chemical etching on the substrate, (b) cleaning the substrate, including removal of some or all of the assisting metal, and (c) performing a chemical etch which results in regularized openings in the silicon substrate.

  4. Analysis of InP-based single photon avalanche diodes based on a single recess-etching process

    Science.gov (United States)

    Lee, Kiwon

    2018-04-01

    Effects of the different etching techniques have been investigated by analyzing electrical and optical characteristics of two-types of single-diffused single photon avalanche diodes (SPADs). The fabricated two-types of SPADs have no diffusion depth variation by using a single diffusion process at the same time. The dry-etched SPADs show higher temperature dependence of a breakdown voltage, larger dark-count-rate (DCR), and lower photon-detection-efficiency (PDE) than those of the wet-etched SPADs due to plasma-induced damage of dry-etching process. The results show that the dry etching damages can more significantly affect the performance of the SPADs based on a single recess-etching process.

  5. Atomic Layer Etching : What can we learn from Atomic Layer Deposition?

    NARCIS (Netherlands)

    Faraz, T.; Roozeboom, F.; Knoops, H.C.M.; Kessels, W.M.M.

    2015-01-01

    Current trends in semiconductor device manufacturing impose extremely stringent requirements on nanoscale processing techniques, both in terms of accurately controlling material properties and in terms of precisely controlling nanometer dimensions. To take nanostructuring by dry etching to the next

  6. Atomic layer etching : what can we learn from atomic layer deposition?

    NARCIS (Netherlands)

    Faraz, T.; Roozeboom, F.; Knoops, H.C.M.; Kessels, W.M.M.

    2015-01-01

    Current trends in semiconductor device manufacturing impose extremely stringent requirements on nanoscale processing techniques, both in terms of accurately controlling material properties and in terms of precisely controlling nanometer dimensions. To take nanostructuring by dry etching to the next

  7. Development of etched nuclear tracks

    International Nuclear Information System (INIS)

    Somogyi, G.

    1980-01-01

    The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotropic and anisotropic bulk etching as well as for thick and thin detectors. It is summarized how one can calculate the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, track profile and track contour. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (orig.)

  8. Development of etched nuclear tracks

    International Nuclear Information System (INIS)

    Somogyi, G.

    1979-01-01

    The theoretical description of the evolution of etched tracks in solid state nuclear track detectors is considered for different initial conditions, for the cases of constant and varying track etch rates, isotopic and unisotropic bulk etching as well as for thick and thin detectors. It is summarized how the main parameters of etch-pit geometry, the track length, the axes of a surface track opening, the track profile and the track contour can be calculated. The application of the theory of etch-track evolution is demonstrated with selected practical problems. Attention is paid to certain questions related to the determination of unknown track parameters and calculation of surface track sizes. Finally, the theory is extended to the description of the perforation and etch-hole evolution process in thin detectors, which is of particular interest for track radiography and nuclear filter production. (author)

  9. Earthquakes - a danger to deep-lying repositories?

    International Nuclear Information System (INIS)

    2012-03-01

    This booklet issued by the Swiss National Cooperative for the Disposal of Radioactive Waste NAGRA takes a look at geological factors concerning earthquakes and the safety of deep-lying repositories for nuclear waste. The geological processes involved in the occurrence of earthquakes are briefly looked at and the definitions for magnitude and intensity of earthquakes are discussed. Examples of damage caused by earthquakes are given. The earthquake situation in Switzerland is looked at and the effects of earthquakes on sub-surface structures and deep-lying repositories are discussed. Finally, the ideas proposed for deep-lying geological repositories for nuclear wastes are discussed

  10. VISTA Stares Deeply into the Blue Lagoon

    Science.gov (United States)

    2011-01-01

    This new infrared image of the Lagoon Nebula was captured as part of a five-year study of the Milky Way using ESO's VISTA telescope at the Paranal Observatory in Chile. This is a small piece of a much larger image of the region surrounding the nebula, which is, in turn, only one part of a huge survey. Astronomers are currently using ESO's Visible and Infrared Survey Telescope for Astronomy (VISTA) to scour the Milky Way's central regions for variable objects and map its structure in greater detail than ever before. This huge survey is called VISTA Variables in the Via Lactea (VVV) [1]. The new infrared image presented here was taken as part of this survey. It shows the stellar nursery called the Lagoon Nebula (also known as Messier 8, see eso0936), which lies about 4000-5000 light-years away in the constellation of Sagittarius (the Archer). Infrared observations allow astronomers to peer behind the veil of dust that prevents them from seeing celestial objects in visible light. This is because visible light, which has a wavelength that is about the same size as the dust particles, is strongly scattered, but the longer wavelength infrared light can pass through the dust largely unscathed. VISTA, with its 4.1-metre diameter mirror - the largest survey telescope in the world - is dedicated to surveying large areas of the sky at near-infrared wavelengths deeply and quickly. It is therefore ideally suited to studying star birth. Stars typically form in large molecular clouds of gas and dust, which collapse under their own weight. The Lagoon Nebula, however, is also home to a number of much more compact regions of collapsing gas and dust, called Bok globules [2]. These dark clouds are so dense that, even in the infrared, they can block the starlight from background stars. But the most famous dark feature in the nebula, for which it is named, is the lagoon-shaped dust lane that winds its way through the glowing cloud of gas. Hot, young stars, which give off intense

  11. Deeply bound pionic states and modifications of hadrons

    International Nuclear Information System (INIS)

    Hirenzaki, S.

    2000-01-01

    We have studied the structure and formation of mesic atoms and mesic nuclei theoretically. The latest results on the deeply bound pionic atoms, the kaonic atoms and the sigma states are reported. (author)

  12. Plasma etching of polymers like SU8 and BCB

    Science.gov (United States)

    Mischke, Helge; Gruetzner, Gabi; Shaw, Mark

    2003-01-01

    Polymers with high viscosity, like SU8 and BCB, play a dominant role in MEMS application. Their behavior in a well defined etching plasma environment in a RIE mode was investigated. The 40.68 MHz driven bottom electrode generates higher etch rates combined with much lower bias voltages by a factor of ten or a higher efficiency of the plasma with lower damaging of the probe material. The goal was to obtain a well-defined process for the removal and structuring of SU8 and BCB using fluorine/oxygen chemistry, defined using variables like electron density and collision rate. The plasma parameters are measured and varied using a production proven technology called SEERS (Self Excited Electron Resonance Spectroscopy). Depending on application and on Polymer several metals are possible (e.g., gold, aluminum). The characteristic of SU8 and BCB was examined in the case of patterning by dry etching in a CF4/O2 chemistry. Etch profile and etch rate correlate surprisingly well with plasma parameters like electron density and electron collision rate, thus allowing to define to adjust etch structure in situ with the help of plasma parameters.

  13. Optical diagnostics for plasma etching

    NARCIS (Netherlands)

    Bisschops, T.H.J.; Kroesen, G.M.W.; Veldhuizen, van E.M.; de Zeeuw, C.J.H.; Timmermans, C.J.

    1985-01-01

    Several optical diagnostics were used to det. plasma properties and etch rates in an single wafer etch reactor. Results of UV-visible spectroscopy and IR absorption spectroscopy, indicating different mol. species and their densities are presented. The construction of an interferometer to det. the

  14. Etching Effect of an Atmospheric DC Arc Plasmatron

    International Nuclear Information System (INIS)

    Chun, Se Min; Kim, Ji Hun; Kang, In Je; Lee, Heon Ju

    2010-01-01

    Thermal plasmas (especially arc plasma) were extensively industrialized, principally by aeronautic sector. Cold plasma technologies have been developed in the microelectronics but their vacuum equipment limits their implantation. Plasmas used in dry etching, thin film deposition and surface treatment for display or semiconductor industries are operating at low pressures in very costly due to the use of vacuum equipment and vacuum components. Use of DC arc plasmatrons in welding, soldering, and cutting of metals is well known. A DC-arc plasmatron with high durability was reported to be a suitable device for etching silicon and photo-resist surfaces

  15. Anisotropic etching of silicon for application in micro machine using plasma of SF6/CH4/O2/Ar and SF6/CF4/O2/Ar

    International Nuclear Information System (INIS)

    Reyes B, C.; Moshkalyov, S.A.; Swart, J.W.

    2004-01-01

    We investigated the reactive ion etching of silicon using SF 6 /CH 4 (CF 4 )/O 2 /Ar gas mixtures containing fluorine for MEMS applications. Etch rates and anisotropy of etch profiles were examined as a function of gas composition, material of electrode, and RF power. Etch depths were measured using a profilometers, and etch profiles were analyzed by scanning electron microscope. As a mask material, an aluminium film deposited by evaporation, was used. High anisotropy of etching of 0.95 was achieved at etch depths up to 20-30 micrometers and etch rates of approximately 0.3-0.6 μm/min. Highly anisotropic etching is based on a mechanism that enhance the ion bombarding and protects the sidewalls due to polymerization and/or oxidation mechanisms in order to avoid the lateral etch. However, under the anisotropic etching conditions, considerable damages of the etched surfaces (roughness formation), were observed. After etching experiments, wet / dry cleaning procedures were applied to remove surface residues resulting from the reactive ion etching and to improve the etched surface morphology. (Author)

  16. Etch bias inversion during EUV mask ARC etch

    Science.gov (United States)

    Lajn, Alexander; Rolff, Haiko; Wistrom, Richard

    2017-07-01

    The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their efforts on the production requirements. For the photo mask industry, these requirements include the control of defectivity, CD performance and lifetime of their masks. The mask CD performance including CD uniformity, CD targeting, and CD linearity/ resolution, is predominantly determined by the photo resist performance and by the litho and etch processes. State-of-the-art chemically amplified resists exhibit an asymmetric resolution for directly and indirectly written features, which usually results in a similarly asymmetric resolution performance on the mask. This resolution gap may reach as high as multiple tens of nanometers on the mask level in dependence of the chosen processes. Depending on the printing requirements of the wafer process, a reduction or even an increase of this gap may be required. A potential way of tuning via the etch process, is to control the lateral CD contribution during etch. Aside from process tuning knobs like pressure, RF powers and gases, which usually also affect CD linearity and CD uniformity, the simplest knob is the etch time itself. An increased over etch time results in an increased CD contribution in the normal case. , We found that the etch CD contribution of ARC layer etch on EUV photo masks is reduced by longer over etch times. Moreover, this effect can be demonstrated to be present for different etch chambers and photo resists.

  17. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-01-01

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during

  18. Thermodynamics of nuclear track chemical etching

    Science.gov (United States)

    Rana, Mukhtar Ahmed

    2018-05-01

    This is a brief paper with new and useful scientific information on nuclear track chemical etching. Nuclear track etching is described here by using basic concepts of thermodynamics. Enthalpy, entropy and free energy parameters are considered for the nuclear track etching. The free energy of etching is determined using etching experiments of fission fragment tracks in CR-39. Relationship between the free energy and the etching temperature is explored and is found to be approximately linear. The above relationship is discussed. A simple enthalpy-entropy model of chemical etching is presented. Experimental and computational results presented here are of fundamental interest in nuclear track detection methodology.

  19. A Nanoscale Plasma Etching Process for Pole Tip Recession of Perpendicular Recording Magnetic Head

    OpenAIRE

    LIU, Shoubin; HE, Dayao

    2017-01-01

    The pole tip of perpendicular recording head is constructed in a stacked structure with materials of NiCoFe, NiFe, Al2O3 and AlTiC. The surfaces of different materials are set at different heights below the air-bearing surface of slider. This paper presented a plasma dry etching process for Pole Tip Recession (PTR) based on an ion beam etching system. Ar and O2 mixed plasma at small incident angles have a high removal rate to the nonmagnetic material. It was utilised to etch the reference sur...

  20. Suitability of N2 plasma for the RIE etching of thin Ag layers

    International Nuclear Information System (INIS)

    Hrkut, P.; Matay, L.; Kostic, I.; Bencurova, A.; Konecnikova, A.; Nemec, P.; Andok, R.; Hacsik, S.

    2013-01-01

    Silver layers of 48 nm thickness were evaporated using EB PVD on Si wafers. The masking resist layers were spin-coated and patterned by the EBDW lithography on the ZBA 21 (20 keV) (Carl-Zeiss, Jena; currently Vistec, Ltd.) variable shaped e-beam pattern generator in II SAS. In order to check the etching process in N 2 , we covered a part of the samples containing Ag with a layer of various resists. The samples were dried on a hot-plate and RIE etched in SCM 600 (1 Pa; 20 sccm; 500 W). After 8 minutes the non-masked Ag layer was completely etched away, what testified suitability of N 2 as an etching gas. Also the etch time of 4 minutes showed to be sufficient for etching through the Ag layer. In order to optimize the etching process it was necessary to estimate the etch-rate (E.R.) of suitable resist layers and of the silver layer. The (authors)

  1. Nitride-based Schottky diodes and HFETs fabricated by photo-enhanced chemical wet etching

    International Nuclear Information System (INIS)

    Su, Y.K.; Chang, S.J.; Kuan, T.M.; Ko, C.H.; Webb, J.B.; Lan, W.H.; Cherng, Y.T.; Chen, S.C.

    2004-01-01

    Photo-enhanced chemical (PEC) wet etching technology was used to etch GaN and AlGaN epitaxial layers. It was found that the maximum etch rates were 510, 1960, 300, and 0 nm/mm for GaN, Al 0.175 Ga 0.825 N, Al 0.23 Ga 0.77 N, and Al 0.4 Ga 0.6 N, respectively. It was also found that we could achieve a high Al 0.175 Ga 0.825 N to GaN etch rate ratio of 12.6. Nitride-based Schottky diodes and heterostructure field effect transistors (HFETs) were also fabricated by PEC wet etching. It was found that we could achieve a saturated I D larger than 850 mA/mm and a maximum g m about 163 mS/mm from PEC wet etched HFET with a 0.5 μm gate length. Compared with dry etched devices, the leakage currents observed from the PEC wet etched devices were also found to be smaller

  2. Complex force network in marginally and deeply jammed solids

    International Nuclear Information System (INIS)

    Hu Mao-Bin; Jiang Rui; Wu Qing-Song

    2013-01-01

    This paper studies the force network properties of marginally and deeply jammed packings of frictionless soft particles from the perspective of complex network theory. We generate zero-temperature granular packings at different pressures by minimizing the inter-particle potential energy. The force networks are constructed as nodes representing particles and links representing normal forces between the particles. Deeply jammed solids show remarkably different behavior from marginally jammed solids in their degree distribution, strength distribution, degree correlation, and clustering coefficient. Bimodal and multi-modal distributions emerge when the system enters the deep jamming region. The results also show that small and large particles can show different correlation behavior in this simple system

  3. Longitudinal Target-Spin Asymmetries for Deeply Virtual Compton Scattering

    Science.gov (United States)

    Seder, E.; Biselli, A.; Pisano, S.; Niccolai, S.; Smith, G. D.; Joo, K.; Adhikari, K.; Amaryan, M. J.; Anderson, M. D.; Anefalos Pereira, S.; Avakian, H.; Battaglieri, M.; Bedlinskiy, I.; Bono, J.; Boiarinov, S.; Bosted, P.; Briscoe, W.; Brock, J.; Brooks, W. K.; Bültmann, S.; Burkert, V. D.; Carman, D. S.; Carlin, C.; Celentano, A.; Chandavar, S.; Charles, G.; Colaneri, L.; Cole, P. L.; Contalbrigo, M.; Crabb, D.; Crede, V.; D'Angelo, A.; Dashyan, N.; De Vita, R.; De Sanctis, E.; Deur, A.; Djalali, C.; Doughty, D.; Dupre, R.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fedotov, G.; Fegan, S.; Filippi, A.; Fleming, J. A.; Fradi, A.; Garillon, B.; Garçon, M.; Gevorgyan, N.; Ghandilyan, Y.; Giovanetti, K. L.; Girod, F. X.; Goetz, J. T.; Gohn, W.; Gothe, R. W.; Griffioen, K. A.; Guegan, B.; Guidal, M.; Guo, L.; Hafidi, K.; Hakobyan, H.; Hanretty, C.; Harrison, N.; Hattawy, M.; Hirlinger Saylor, N.; Holtrop, M.; Hughes, S. M.; Ilieva, Y.; Ireland, D. G.; Ishkhanov, B. S.; Isupov, E. L.; Jo, H. S.; Joosten, S.; Keith, C. D.; Keller, D.; Khachatryan, G.; Khandaker, M.; Kim, A.; Kim, W.; Klein, A.; Klein, F. J.; Koirala, S.; Kubarovsky, V.; Kuhn, S. E.; Lenisa, P.; Livingston, K.; Lu, H. Y.; MacGregor, I. J. D.; Markov, N.; Mayer, M.; McKinnon, B.; Meekins, D. G.; Mineeva, T.; Mirazita, M.; Mokeev, V.; Montgomery, R.; Moody, C. I.; Moutarde, H.; Movsisyan, A.; Munoz Camacho, C.; Nadel-Turonski, P.; Niculescu, I.; Osipenko, M.; Ostrovidov, A. I.; Paolone, M.; Pappalardo, L. L.; Park, K.; Park, S.; Pasyuk, E.; Peng, P.; Phelps, W.; Pogorelko, O.; Price, J. W.; Prok, Y.; Protopopescu, D.; Puckett, A. J. R.; Ripani, M.; Rizzo, A.; Rosner, G.; Rossi, P.; Roy, P.; Sabatié, F.; Salgado, C.; Schott, D.; Schumacher, R. A.; Senderovich, I.; Simonyan, A.; Skorodumina, I.; Sokhan, D.; Sparveris, N.; Stepanyan, S.; Stoler, P.; Strakovsky, I. I.; Strauch, S.; Sytnik, V.; Taiuti, M.; Tang, W.; Tian, Y.; Ungaro, M.; Voskanyan, H.; Voutier, E.; Walford, N. K.; Watts, D. P.; Wei, X.; Weinstein, L. B.; Wood, M. H.; Zachariou, N.; Zana, L.; Zhang, J.; Zonta, I.; CLAS Collaboration

    2015-01-01

    A measurement of the electroproduction of photons off protons in the deeply inelastic regime was performed at Jefferson Lab using a nearly 6 GeV electron beam, a longitudinally polarized proton target, and the CEBAF Large Acceptance Spectrometer. Target-spin asymmetries for e p →e'p'γ events, which arise from the interference of the deeply virtual Compton scattering and the Bethe-Heitler processes, were extracted over the widest kinematics in Q2 , xB, t , and ϕ , for 166 four-dimensional bins. In the framework of generalized parton distributions, at leading twist the t dependence of these asymmetries provides insight into the spatial distribution of the axial charge of the proton, which appears to be concentrated in its center. These results also bring important and necessary constraints for the existing parametrizations of chiral-even generalized parton distributions.

  4. Deeply inelastic scattering at small x in 20 min

    International Nuclear Information System (INIS)

    Levin, E.M.

    1992-01-01

    A status report is presented on new phenomena that are anticipated in deeply inelastic scattering in the low x→0 region. A summary of the theoretical situation in the region of small x is given, including the importance for the understanding of high energy interaction in QCD, and the low x behaviour of deep inelastic structure function. This new area of physics will be studied experimentally at HERA. (R.P.) 16 refs.; 6 figs

  5. Non-Markovian features of deeply inelastic collisions

    International Nuclear Information System (INIS)

    Pal, D.; Chattopadhyay, S.; Kar, K.

    1988-01-01

    To study the effect of memory in the diffusion processes (of charge, mass etc) observed in deeply inelastic heavy-ion reactions, we derive non-Markovian transport equations for the exponential and Gaussian memory kernels. The centroid and the variance of the distribution are expressed in terms of the memory time, drift and diffusion coefficients. The predictions based on this theory show better agreement with the experimental data than the Markovian results. (author)

  6. Deeply virtual Compton scattering: How to test handbag dominance?

    International Nuclear Information System (INIS)

    Gousset, T.; Gousset, T.; Diehl, M.; Pire, B.; Diehl, M.; Ralston, J.P.

    1998-01-01

    We propose detailed tests of the handbag approximation in exclusive deeply virtual Compton scattering. Those tests make no use of any prejudice about parton correlations in the proton which are basically unknown objects and beyond the scope of perturbative QCD. Since important information on the proton substructure can be gained in the regime of light cone dominance we consider that such a class of tests is of special relevance. copyright 1998 American Institute of Physics

  7. Persistence of deeply sourced iron in the Pacific Ocean.

    Science.gov (United States)

    Horner, Tristan J; Williams, Helen M; Hein, James R; Saito, Mak A; Burton, Kevin W; Halliday, Alex N; Nielsen, Sune G

    2015-02-03

    Biological carbon fixation is limited by the supply of Fe in vast regions of the global ocean. Dissolved Fe in seawater is primarily sourced from continental mineral dust, submarine hydrothermalism, and sediment dissolution along continental margins. However, the relative contributions of these three sources to the Fe budget of the open ocean remains contentious. By exploiting the Fe stable isotopic fingerprints of these sources, it is possible to trace distinct Fe pools through marine environments, and through time using sedimentary records. We present a reconstruction of deep-sea Fe isotopic compositions from a Pacific Fe-Mn crust spanning the past 76 My. We find that there have been large and systematic changes in the Fe isotopic composition of seawater over the Cenozoic that reflect the influence of several, distinct Fe sources to the central Pacific Ocean. Given that deeply sourced Fe from hydrothermalism and marginal sediment dissolution exhibit the largest Fe isotopic variations in modern oceanic settings, the record requires that these deep Fe sources have exerted a major control over the Fe inventory of the Pacific for the past 76 My. The persistence of deeply sourced Fe in the Pacific Ocean illustrates that multiple sources contribute to the total Fe budget of the ocean and highlights the importance of oceanic circulation in determining if deeply sourced Fe is ever ventilated at the surface.

  8. Laser etching as an alternative

    International Nuclear Information System (INIS)

    Dreyfus, R.W.; Kelly, R.

    1989-01-01

    Atoms and molecules are removed from surfaces by intense laser beams. This fact has been known almost since the discovery of the laser. Within the present overall area of interest, namely understanding ion-beam-induced sputtering, it is equally important both to contrast laser etching to ion sputtering and to understand the underlying physics taking place during laser etching. Beyond some initial broad observations, the specific discussion is limited to, and aimed at, two areas: (i) short wavelength, UV, laser-pulse effects and (ii) energy fluences sufficiently small that only monolayers (and not microns) of material are removed per pulse. 38 refs.; 13 figs.; 5 tabs

  9. Introducing etch kernels for efficient pattern sampling and etch bias prediction

    Science.gov (United States)

    Weisbuch, François; Lutich, Andrey; Schatz, Jirka

    2018-01-01

    Successful patterning requires good control of the photolithography and etch processes. While compact litho models, mainly based on rigorous physics, can predict very well the contours printed in photoresist, pure empirical etch models are less accurate and more unstable. Compact etch models are based on geometrical kernels to compute the litho-etch biases that measure the distance between litho and etch contours. The definition of the kernels, as well as the choice of calibration patterns, is critical to get a robust etch model. This work proposes to define a set of independent and anisotropic etch kernels-"internal, external, curvature, Gaussian, z_profile"-designed to represent the finest details of the resist geometry to characterize precisely the etch bias at any point along a resist contour. By evaluating the etch kernels on various structures, it is possible to map their etch signatures in a multidimensional space and analyze them to find an optimal sampling of structures. The etch kernels evaluated on these structures were combined with experimental etch bias derived from scanning electron microscope contours to train artificial neural networks to predict etch bias. The method applied to contact and line/space layers shows an improvement in etch model prediction accuracy over standard etch model. This work emphasizes the importance of the etch kernel definition to characterize and predict complex etch effects.

  10. Neutron dosimetry using electrochemical etching

    International Nuclear Information System (INIS)

    Su, S.J.; Stillwagon, G.B.; Morgan, K.Z.

    1977-01-01

    Registration of α-tracks and fast-neutron-induced recoils tracks by the electrochemical etching technique as applied to sensitive polymer foils (e.g., polycarbonate) provides a simple, sensitive and inexpensive means of fast neutron personnel dosimetry as well as a valuable research tool for microdosimetry. When tracks were amplified by our electrochemical technique and the etching results compared with conventional etching technique a striking difference was noted. The electrochemically etched tracks were of much larger diameter (approx. 100 μm) and gave superior contrast. Two optical devices--the transparency projector and microfiche reader--were adapted to facilitate counting of the tracks appearing on our polycarbonate foils. The projector produced a magnification of 14X for a screen to projector distance of 5.0 meter and read's magnification was 50X. A Poisson distribution was determined for the number of tracks located in a particular area of the foil and experimentally verified by random counting of quarter sections of the microfiche reader screen. Finally, in an effort to determine dose equivalent (rem), a conversion factor is being determined by finding the sensitivity response (tracks/neutron) of recoil particle induced tracks as a function of monoenergetic fast neutrons and comparing results with those obtained by others

  11. High-density plasma etching of III-nitrides: Process development, device applications and damage remediation

    Science.gov (United States)

    Singh, Rajwinder

    Plasma-assisted etching is a key technology for III-nitride device fabrication. The inevitable etch damage resulting from energetic pattern transfer is a challenge that needs to be addressed in order to optimize device performance and reliability. This dissertation focuses on the development of a high-density inductively-coupled plasma (ICP) etch process for III-nitrides, the demonstration of its applicability to practical device fabrication using a custom built ICP reactor, and development of techniques for remediation of etch damage. A chlorine-based standard dry etch process has been developed and utilized in fabrication of a number of electronic and optoelectronic III-nitride devices. Annealing studies carried out at 700°C have yielded the important insight that the annealing time necessary for making good-quality metal contacts to etch processed n-GaN is very short (water, prior to metallization, removes some of the etch damage and is helpful in recovering contact quality. In-situ treatment consisting of a slow ramp-down of rf bias at the end of the etch is found to achieve the same effect as the ex-situ treatment. This insitu technique is significantly advantageous in a large-scale production environment because it eliminates a process step, particularly one involving treatment in hydrochloric acid. ICP equipment customization for scaling up the process to full 2-inch wafer size is described. Results on etching of state of the art 256 x 256 AlGaN focal plane arrays of ultraviolet photodetectors are reported, with excellent etch uniformity over the wafer area.

  12. Dry technologies for the production of crystalline silicon solar cells; Trockentechnologien zur Herstellung von kristallinen Siliziumsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Rentsch, J.

    2005-04-15

    Within this work, dynamic plasma etching technologies for the industrial production of crystalline silicon solar cells has been investigated. The research activity can be separated into three major steps: the characterisation of the etching behaviour of a newly developed dynamic plasma etching system, the development and analysis of dry etching processes for solar cell production and the determination of the ecological and economical impacts of such a new technology compared to standard up to date technologies. The characterisation of the etching behaviour has been carried out for two different etching sources, a low frequency (110 kHz) and a microwave (2.45 GHz) plasma source. The parameter of interest was the delivered ion energy of each source mainly determining the reachable etch rate. The etch rate turned out to be the main most critical parameter concerning the reachable wafer throughput per hour. Other points of interest in characterisation of the etching system were the material of the transport carriers, the silicon load as well as the process temperatures. The development of different dry etching processes targets the design of a complete dry production process for crystalline silicon solar cells. Therefore etching processes for saw damage removal, texturing, edge isolation as well as etching of dielectric layers have been developed and optimised. The major benefits of a complete dry production process would be the reduction of handling steps in between process steps and therefore offers a large cost reduction potential. For multicrystalline silicon solar cells a cost reduction potential of 5 % compared to a standard wet chemical based reference process could be realized only including the dry etching of a phosphorus silicate glass layer after diffusion. Further reduction potential offers the implementation of a dry texturing process due to a significant efficiency increase. (orig.)

  13. Seismic response analysis for a deeply embedded nuclear power plant

    International Nuclear Information System (INIS)

    Chen, W.W.H.; Chatterjee, M.; Day, S.M.

    1979-01-01

    One of the important aspect of the aseimic design of nuclear power plants is the evaluation of the seismic soil-structure interaction effect due to design earthquakes. The soil-structure interaction effect can initiate rocking and result in different soil motions compared to the free field motions, thus significantly affecting the structural response. Two methods are generally used to solve the seismic soil-structure interaction problems: the direct finite element method (FLUSH) and the substructure or impedance approach. This paper presents the results of the horizontal seismic soil-structure interaction analysis using the impedance aproach and the direct finite element method for a deeply embedded nuclear power plant. (orig.)

  14. Measurement of Deeply Virtual Compton Scattering at HERA

    CERN Document Server

    Adloff, C.; Andrieu, B.; Anthonis, T.; Arkadov, V.; Astvatsatourov, A.; Babaev, A.; Bahr, J.; Baranov, P.; Barrelet, E.; Bartel, W.; Bate, P.; Beglarian, A.; Behnke, O.; Beier, C.; Belousov, A.; Benisch, T.; Berger, Christoph; Berndt, T.; Bizot, J.C.; Boudry, V.; Braunschweig, W.; Brisson, V.; Broker, H.B.; Brown, D.P.; Bruckner, W.; Bruncko, D.; Burger, J.; Busser, F.W.; Bunyatyan, A.; Burrage, A.; Buschhorn, G.; Bystritskaya, L.; Campbell, A.J.; Cao, Jun; Caron, S.; Clarke, D.; Clerbaux, B.; Collard, C.; Contreras, J.G.; Coppens, Y.R.; Coughlan, J.A.; Cousinou, M.C.; Cox, B.E.; Cozzika, G.; Cvach, J.; Dainton, J.B.; Dau, W.D.; Daum, K.; Davidsson, M.; Delcourt, B.; Delerue, N.; Demirchyan, R.; De Roeck, A.; De Wolf, E.A.; Diaconu, C.; Dingfelder, J.; Dixon, P.; Dodonov, V.; Dowell, J.D.; Droutskoi, A.; Dubak, A.; Duprel, C.; Eckerlin, Guenter; Eckstein, D.; Efremenko, V.; Egli, S.; Eichler, R.; Eisele, F.; Eisenhandler, E.; Ellerbrock, M.; Elsen, E.; Erdmann, M.; Erdmann, W.; Faulkner, P.J.W.; Favart, L.; Fedotov, A.; Felst, R.; Ferencei, J.; Ferron, S.; Fleischer, M.; Fleming, Y.H.; Flugge, G.; Fomenko, A.; Foresti, I.; Formanek, J.; Foster, J.M.; Franke, G.; Gabathuler, E.; Gabathuler, K.; Garvey, J.; Gassner, J.; Gayler, Joerg; Gerhards, R.; Gerlich, C.; Ghazaryan, Samvel; Goerlich, L.; Gogitidze, N.; Goldberg, M.; Goodwin, C.; Grab, C.; Grassler, H.; Greenshaw, T.; Grindhammer, Guenter; Hadig, T.; Haidt, D.; Hajduk, L.; Haynes, W.J.; Heinemann, B.; Heinzelmann, G.; Henderson, R.C.W.; Hengstmann, S.; Henschel, H.; Heremans, R.; Herrera, G.; Herynek, I.; Hildebrandt, M.; Hilgers, M.; Hiller, K.H.; Hladky, J.; Hoting, P.; Hoffmann, D.; Horisberger, R.; Hurling, S.; Ibbotson, M.; Issever, C .; Jacquet, M.; Jaffre, M.; Janauschek, L.; Janssen, X.; Jemanov, V.; Jonsson, L.; Johnson, D.P.; Jones, M.A.S.; Jung, H.; Kastli, H.K.; Kant, D.; Kapichine, M.; Karlsson, M.; Karschnick, O.; Keil, F.; Keller, N.; Kennedy, J.; Kenyon, I.R.; Kermiche, S.; Kiesling, Christian M.; Kjellberg, P.; Klein, M.; Kleinwort, C.; Kluge, T.; Knies, G.; Koblitz, B.; Kolya, S.D.; Korbel, V.; Kostka, P.; Kotelnikov, S.K.; Koutouev, R.; Koutov, A.; Krehbiel, H.; Kroseberg, J.; Kruger, K.; Kupper, A.; Kuhr, T.; Kurca, T.; Lahmann, R.; Lamb, D.; Landon, M.P.J.; Lange, W.; Lastovicka, T.; Laycock, P.; Lebailly, E.; Lebedev, A.; Leissner, B.; Lemrani, R.; Lendermann, V.; Levonian, S.; Lindstroem, M.; List, B.; Lobodzinska, E.; Lobodzinski, B.; Loginov, A.; Loktionova, N.; Lubimov, V.; Luders, S.; Luke, D.; Lytkin, L.; Mahlke-Kruger, H.; Malden, N.; Malinovski, E.; Malinovski, I.; Maracek, R.; Marage, P.; Marks, J.; Marshall, R.; Martyn, H.U.; Martyniak, J.; Maxfield, S.J.; Meer, D.; Mehta, A.; Meier, K.; Meyer, A.B.; Meyer, H.; Meyer, J.; Meyer, P.O.; Mikocki, S.; Milstead, D.; Mkrtchyan, T.; Mohr, R.; Mohrdieck, S.; Mondragon, M.N.; Moreau, F.; Morozov, A.; Morris, J.V.; Muller, K.; Murin, P.; Nagovizin, V.; Naroska, B.; Naumann, J.; Naumann, T.; Nellen, G.; Newman, Paul R.; Nicholls, T.C.; Niebergall, F.; Niebuhr, C.; Nix, O.; Nowak, G.; Olsson, J.E.; Ozerov, D.; Panassik, V.; Pascaud, C.; Patel, G.D.; Peez, M.; Perez, E.; Phillips, J.P.; Pitzl, D.; Poschl, R.; Potachnikova, I.; Povh, B.; Rabbertz, K.; Radel, G.; Rauschenberger, J.; Reimer, P.; Reisert, B.; Reyna, D.; Risler, C.; Rizvi, E.; Robmann, P.; Roosen, R.; Rostovtsev, A.; Rusakov, S.; Rybicki, K.; Sankey, D.P.C.; Scheins, J.; Schilling, F.P.; Schleper, P.; Schmidt, D.; Schmidt, S.; Schmitt, S.; Schneider, M.; Schoeffel, L.; Schoning, A.; Schorner, T.; Schroder, V.; Schultz-Coulon, H.C.; Schwanenberger, C.; Sedlak, K.; Sefkow, F.; Chekelian, V.; Sheviakov, I.; Shtarkov, L.N.; Sirois, Y.; Sloan, T.; Smirnov, P.; Solovev, Y.; South, D.; Spaskov, V.; Specka, Arnd E.; Spitzer, H.; Stamen, R.; Stella, B.; Stiewe, J.; Straumann, U.; Swart, M.; Tasevsky, M.; Chernyshov, V.; Chetchelnitski, S.; Thompson, Graham; Thompson, P.D.; Tobien, N.; Traynor, D.; Truoel, Peter; Tsipolitis, G.; Tsurin, I.; Turnau, J.; Turney, J.E.; Tzamariudaki, E.; Udluft, S.; Urban, Marcel; Usik, A.; Valkar, S.; Valkarova, A.; Vallee, C.; Van Mechelen, P.; Vassilev, S.; Vazdik, Y.; Vichnevski, A.; Wacker, K.; Wallny, R.; Waugh, B.; Weber, G.; Weber, M.; Wegener, D.; Werner, C.; Werner, M.; Werner, N.; White, G.; Wiesand, S.; Wilksen, T.; Winde, M.; Winter, G.G.; Wissing, C.; Wobisch, M.; Wunsch, E.; Wyatt, A.C.; Zacek, J.; Zalesak, J.; Zhang, Z.; Zhokin, A.; Zomer, F.; Zsembery, J.; zur Nedden, M.

    2001-01-01

    A measurement is presented of elastic Deeply Virtual Compton Scattering e^+ + p -> e^+ + photon + p at HERA using data taken with the H1 detector. The cross section is measured as a function of the photon virtuality, Q^2, and the invariant mass, W, of the gamma p system, in the kinematic range 2 < Q^2 < 20 GeV^2, 30 < W < 120 GeV and |t| < 1 GeV^2, where t is the squared momentum transfer to the proton. The measurement is compared to QCD based calculations.

  15. Self-etching ceramic primer versus hydrofluoric acid etching: Etching efficacy and bonding performance.

    Science.gov (United States)

    El-Damanhoury, Hatem M; Gaintantzopoulou, Maria D

    2018-01-01

    This study assessed the effect of pretreatment of hybrid and glass ceramics using a self-etching primer on the shear bond strength (SBS) and surface topography, in comparison to pretreatment with hydrofluoric acid and silane. 40 rectangular discs from each ceramic material (IPS e.max CAD;EM, Vita Mark II;VM, Vita Enamic;VE), were equally divided (n=10) and assigned to one of four surface pretreatment methods; etching with 4.8% hydrofluoric acid followed by Monobond plus (HFMP), Monobond etch & prime (Ivoclar Vivadent) (MEP), No treatment (NT) as negative control and Monobond plus (Ivoclar Vivadent) with no etching (MP) as positive control. SBS of resin cement (Multilink-N, Ivoclar Vivadent) to ceramic surfaces was tested following a standard protocol. Surface roughness was evaluated using an Atomic force microscope (AFM). Surface topography and elemental analysis were analyzed using SEM/EDX. Data were analyzed with two-way analysis of variance (ANOVA) and post-hoc Bonferroni test at a significance level of α=0.05. Pretreatment with HFMP resulted in higher SBS and increased surface roughness in comparison to MEP and MP. Regardless the method of surface pretreatment, the mean SBS values of EM ceramic was significantly higher (pceramics for resin-luting cementation. Copyright © 2017 Japan Prosthodontic Society. Published by Elsevier Ltd. All rights reserved.

  16. Quadrilateral Micro-Hole Array Machining on Invar Thin Film: Wet Etching and Electrochemical Fusion Machining

    Directory of Open Access Journals (Sweden)

    Woong-Kirl Choi

    2018-01-01

    Full Text Available Ultra-precision products which contain a micro-hole array have recently shown remarkable demand growth in many fields, especially in the semiconductor and display industries. Photoresist etching and electrochemical machining are widely known as precision methods for machining micro-holes with no residual stress and lower surface roughness on the fabricated products. The Invar shadow masks used for organic light-emitting diodes (OLEDs contain numerous micro-holes and are currently machined by a photoresist etching method. However, this method has several problems, such as uncontrollable hole machining accuracy, non-etched areas, and overcutting. To solve these problems, a machining method that combines photoresist etching and electrochemical machining can be applied. In this study, negative photoresist with a quadrilateral hole array pattern was dry coated onto 30-µm-thick Invar thin film, and then exposure and development were carried out. After that, photoresist single-side wet etching and a fusion method of wet etching-electrochemical machining were used to machine micro-holes on the Invar. The hole machining geometry, surface quality, and overcutting characteristics of the methods were studied. Wet etching and electrochemical fusion machining can improve the accuracy and surface quality. The overcutting phenomenon can also be controlled by the fusion machining. Experimental results show that the proposed method is promising for the fabrication of Invar film shadow masks.

  17. ASSESSMENT OF SEISMIC ANALYSIS METHODOLOGIES FOR DEEPLY EMBEDDED NPP STRUCTURES

    International Nuclear Information System (INIS)

    XU, J.; MILLER, C.; COSTANTINO, C.; HOFMAYER, C.; GRAVES, H. NRC.

    2005-01-01

    Several of the new generation nuclear power plant designs have structural configurations which are proposed to be deeply embedded. Since current seismic analysis methodologies have been applied to shallow embedded structures (e.g., ASCE 4 suggest that simple formulations may be used to model embedment effect when the depth of embedment is less than 30% of its foundation radius), the US Nuclear Regulatory Commission is sponsoring a program at the Brookhaven National Laboratory with the objective of investigating the extent to which procedures acceptable for shallow embedment depths are adequate for larger embedment depths. This paper presents the results of a study comparing the response spectra obtained from two of the more popular analysis methods for structural configurations varying from shallow embedment to complete embedment. A typical safety related structure embedded in a soil profile representative of a typical nuclear power plant site was utilized in the study and the depths of burial (DOB) considered range from 25-100% the height of the structure. Included in the paper are: (1) the description of a simplified analysis and a detailed approach for the SSI analyses of a structure with various DOB, (2) the comparison of the analysis results for the different DOBs between the two methods, and (3) the performance assessment of the analysis methodologies for SSI analyses of deeply embedded structures. The resulting assessment from this study has indicated that simplified methods may be capable of capturing the seismic response for much deeper embedded structures than would be normally allowed by the standard practice

  18. Process for etching zirconium metallic objects

    International Nuclear Information System (INIS)

    Panson, A.J.

    1988-01-01

    In a process for etching of zirconium metallic articles formed from zirconium or a zirconium alloy, wherein the zirconium metallic article is contacted with an aqueous hydrofluoric acid-nitric acid etching bath having an initial ratio of hydrofluoric acid to nitric acid and an initial concentration of hydrofluoric and nitric acids, the improvement, is described comprising: after etching of zirconium metallic articles in the bath for a period of time such that the etching rate has diminished from an initial rate to a lesser rate, adding hydrofluoric acid and nitric acid to the exhausted bath to adjust the concentration and ratio of hydrofluoric acid to nitric acid therein to a value substantially that of the initial concentration and ratio and thereby regenerate the etching solution without removal of dissolved zirconium therefrom; and etching further zirconium metallic articles in the regenerated etching bath

  19. Reactive ion beam etching for microcavity surface emitting laser fabrication: technology and damage characterization

    International Nuclear Information System (INIS)

    Matsutani, A.; Tadokoro, T.; Koyama, F.; Iga, K.

    1993-01-01

    Reactive ion beam etching (RIBE) is an effective dry etching technique for the fabrication of micro-sized surface emitting (SE) lasers and optoelectronic devices. In this chapter, some etching characteristics for GaAs, InP and GaInAsP with a Cl 2 gas using an RIBE system are discussed. Micro-sized circular mesas including GaInAsP/InP multilayers with vertical sidewalls were fabricated. RIBE-induced damage in InP substrates was estimated by C-V and PL measurement. In addition, the removal of the induced damage by the second RIBE with different conditions for the InP wafer was proposed. The sidewall damage is characterized by photoluminescence emitted from the etched sidewall of a GaInAsP/InP DH wafer. (orig.)

  20. Dry release of all-polymer structures

    DEFF Research Database (Denmark)

    Haefliger, D.; Nordstrøm, M.; Rasmussen, Peter Andreas

    2005-01-01

    We present a simple dry release technique which uses a thin fluorocarbon film for efficient removal of plastic microdevices from a mould or a handling substrate by reducing the adhesion between the two. This fluorocarbon film is deposited on the substrate in an advanced Si dry etch device utilisi...... 100% were demonstrated on wafer-scale. The fluorocarbon film showed excellent compatibility with metal etch processes and polymer baking and curing steps. It further facilitates demoulding of polydimethylsiloxane stamps suitable for soft-lithography....

  1. Methods of etching a substrate

    Energy Technology Data Exchange (ETDEWEB)

    Cosmo, J J; Gambino, R J; Harper, J M.E.

    1979-05-16

    The invention relates to a method of etching a substrate. The substrate is located opposite a target electrode in a vacuum chamber, and the surface of the target electrode is bombarded with energetic particles of atomic dimensions. The target electrode is an intermetallic composition (compound, alloy or finely divided homogeneous mixture) of two metals A and B such that upon bombardment the electrode emits negative ions of metal B which have sufficient energy to produce etching of the substrate. Many target materials are exemplified. Typically the metal A has an electronegativity XA and metal B has an electronegativity XB such that Xb - Xa is greater than about 2.55 electron volts, with the exception of combinations of metals having a fractional ionicity Q less than about 0.314. The source of the energetic particles may be an ionised gas in the vacuum chamber. The apparatus and its mode of operation are described in detail.

  2. Methods of etching a substrate

    International Nuclear Information System (INIS)

    Cosmo, J.J.; Gambino, R.J.; Harper, J.M.E.

    1979-01-01

    The invention relates to a method of etching a substrate. The substrate is located opposite a target electrode in a vacuum chamber, and the surface of the target electrode is bombarded with energetic particles of atomic dimensions. The target electrode is an intermetallic composition (compound, alloy or finely divided homogeneous mixture) of two metals A and B such that upon bombardment the electrode emits negative ions of metal B which have sufficient energy to produce etching of the substrate. Many target materials are exemplified. Typically the metal A has an electronegativity XA and metal B has an electronegativity XB such that Xb - Xa is greater than about 2.55 electron volts, with the exception of combinations of metals having a fractional ionicity Q less than about 0.314. The source of the energetic particles may be an ionised gas in the vacuum chamber. The apparatus and its mode of operation are described in detail. (U.K.)

  3. Hybrid mask for deep etching

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-08-10

    Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.

  4. Thermal history-based etching

    Science.gov (United States)

    Simpson, John T.

    2017-11-28

    A method for adjusting an etchability of a first borosilicate glass by heating the first borosilicate glass; combining the first borosilicate glass with a second borosilicate glass to form a composite; and etching the composite with an etchant. A material having a protrusive phase and a recessive phase, where the protrusive phase protrudes from the recessive phase to form a plurality of nanoscale surface features, and where the protrusive phase and the recessive phase have the same composition.

  5. Study of Thermal Electrical Modified Etching for Glass and Its Application in Structure Etching

    Directory of Open Access Journals (Sweden)

    Zhan Zhan

    2017-02-01

    Full Text Available In this work, an accelerating etching method for glass named thermal electrical modified etching (TEM etching is investigated. Based on the identification of the effect in anodic bonding, a novel method for glass structure micromachining is proposed using TEM etching. To validate the method, TEM-etched glasses are prepared and their morphology is tested, revealing the feasibility of the new method for micro/nano structure micromachining. Furthermore, two kinds of edge effect in the TEM and etching processes are analyzed. Additionally, a parameter study of TEM etching involving transferred charge, applied pressure, and etching roughness is conducted to evaluate this method. The study shows that TEM etching is a promising manufacture method for glass with low process temperature, three-dimensional self-control ability, and low equipment requirement.

  6. Two-year Randomized Clinical Trial of Self-etching Adhesives and Selective Enamel Etching.

    Science.gov (United States)

    Pena, C E; Rodrigues, J A; Ely, C; Giannini, M; Reis, A F

    2016-01-01

    The aim of this randomized, controlled prospective clinical trial was to evaluate the clinical effectiveness of restoring noncarious cervical lesions with two self-etching adhesive systems applied with or without selective enamel etching. A one-step self-etching adhesive (Xeno V(+)) and a two-step self-etching system (Clearfil SE Bond) were used. The effectiveness of phosphoric acid selective etching of enamel margins was also evaluated. Fifty-six cavities were restored with each adhesive system and divided into two subgroups (n=28; etch and non-etch). All 112 cavities were restored with the nanohybrid composite Esthet.X HD. The clinical effectiveness of restorations was recorded in terms of retention, marginal integrity, marginal staining, caries recurrence, and postoperative sensitivity after 3, 6, 12, 18, and 24 months (modified United States Public Health Service). The Friedman test detected significant differences only after 18 months for marginal staining in the groups Clearfil SE non-etch (p=0.009) and Xeno V(+) etch (p=0.004). One restoration was lost during the trial (Xeno V(+) etch; p>0.05). Although an increase in marginal staining was recorded for groups Clearfil SE non-etch and Xeno V(+) etch, the clinical effectiveness of restorations was considered acceptable for the single-step and two-step self-etching systems with or without selective enamel etching in this 24-month clinical trial.

  7. Influence of Pre-etching Times on Fatigue Strength of Self-etch Adhesives to Enamel.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Endo, Hajime; Tsuchiya, Kenji; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    To use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence of phosphoric acid pre-etching times prior to application of self-etch adhesives on enamel bonding. Two single-step self-etch universal adhesives (Prime&Bond Elect and Scotchbond Universal), a conventional single-step self-etch adhesive (G-ӕnial Bond), and a conventional two-step self-etch adhesive (OptiBond XTR) were used. The SBS and SFS were obtained with phosphoric acid pre-etching for 3, 10, or 15 s prior to application of the adhesives, and without pre-etching (0 s) as a control. A staircase method was used to determine the SFS with 10 Hz frequency for 50,000 cycles or until failure occurred. The mean demineralization depth for each treated enamel surface was also measured using a profilometer. For all the adhesives, the groups with pre-etching showed significantly higher SBS and SFS than groups without pre-etching. However, there was no significant difference in SBS and SFS among groups with > 3 s of preetching. In addition, although the groups with pre-etching showed significantly deeper demineralization depths than groups without pre-etching, there was no significant difference in depth among groups with > 3 s of pre-etching. Three seconds of phosphoric acid pre-etching prior to application of self-etch adhesive can enhance enamel bonding effectiveness.

  8. A study on decontamination of TRU, Co, and Mo using plasma surface etching technique

    International Nuclear Information System (INIS)

    Seo, Y.D.; Kim, Y.S.; Paek, S.H.; Lee, K.H.; Jung, C.H.; Oh, W.Z.

    2001-01-01

    Recently dry decontamination/surface-cleaning technology using plasma etching has been focused in the nuclear industry. In this study, the applicability and the effectiveness of this new dry processing technique are experimentally investigated by examining the etching reaction of UO 2 , Co, and Mo in r.f. plasma with the etchant gas of CF 4 /O 2 mixture. UO 2 is chosen as a representing material for uranium and TRU (TRans-Uranic) compounds and metallic Co and Mo are selected because they are the principal contaminants in the spent nuclear components such as valves and pipes made of stainless steel or INCONEL. Results show that in all cases maximum etching rate is achieved when the mole fraction of O 2 to CF 4 /O 2 mixture gas is 20 %, regardless of temperature and r.f. power. (author)

  9. The etching behaviour of silicon carbide compacts

    International Nuclear Information System (INIS)

    Jepps, N.W.; Page, T.F.

    1981-01-01

    A series of microstructural investigations has been undertaken in order to explore the reliability of particular etches in revealing microstructural detail in silicon carbide compacts. A series of specimens has been etched and examined following complete prior microstructural characterization by transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffractometry techniques. In particular, the sensitivity of both a molten salt (KOH/KNO 3 ) etch and a commonly-used oxidizing electrolytic 'colour' etch to crystal purity, crystallographic orientation and polytypic structure has been established. The molten salt etch was found to be sensitive to grain boundaries and stacking disorder while the electrolytic etch was found to be primarily sensitive to local purity and crystallographic orientation. Neither etch appeared intrinsically polytype sensitive. Specifically, for the 'colour' etch, the p- or n-type character of impure regions appears critical in controlling etching behaviour; p-type impurities inhibiting, and n-type impurities enhancing, oxidation. The need to interpret etching behaviour in a manner consistent with the results obtained by a variety of other microstructural techniques will be emphasized. (author)

  10. Numerical simulations of generalized Langevin equations with deeply asymptotic parameters

    International Nuclear Information System (INIS)

    Bao Jingdong; Li Rongwu; Wu Wei

    2004-01-01

    A unified algorithm for solving Langevin equations with deeply asymptotic parameters is proposed and tested. The method consists of identifying solvable linear friction and implementing the force evaluations by use of the Runge-Kutta method. We apply the present scheme to the periodic motion of an overdamped particle subjected to a multiplicative white noise. The accurate calculations for the temporal velocity of the particle and its correlation function can be realized by introducing an inertial term. It is shown that the fluctuation around the steady quantity increases with decreasing time step in the overdamped white-noise algorithm, however, a massive white-noise technique greatly reduces this spurious drift, and the result can converge to the correct value if the added inertia approaches zero. The other application is the simulation of generalized Langevin equation with an exponential memory friction, this allows us to treat a weak non-Markovian process

  11. Deep-lying hole states in the optical model

    International Nuclear Information System (INIS)

    Klevansky, S.P.; Lemmer, R.H.

    1982-01-01

    The strength function for deep-lying hole states in an optical potential is studied by the method of Green's functions. The role of isospin is emphasized. It is shown that, while the main trends of the experimental data on hole states in isotopes of Sn and Pd can be described by an energy independent optical potential, intermediate structures in these data indicate the specific nuclear polarization effects have to be included. This is done by introducing doorway states of good isospin into the optical model potential. Such states consist of neutron hole plus proton core vibrations as well as more complicated excitations that are analog states of proton hole plus neutron core vibrations of the parent nuclear system. Specific calculations for 115 Sn and 103 Pd give satisfactory fits to the strength function data using optical model and doorway state parameters that are reasonable on physical grounds

  12. Earthquake response of nuclear reactor buildings deeply embedded in soil

    International Nuclear Information System (INIS)

    Masao, T.; Takasaki, Y.; Hirasawa, M.; Okajima, M.; Yamamoto, S.; Kawata, E.; Koori, Y.; Ochiai, S.; Shimizu, N.

    1980-01-01

    This paper is concerned with experimental and analytical studies to investigate dynamic behavior of deeply embedded structures such as nuclear reactor buildings. The principal points studied are as follows: (1) Examination of stiffness and radiation damping effects according to embedded depth, (2) verification for distributions of earth pressure according to embedded depth, (3) differences of response characteristics during oscillation according to embedded depth, and (4) proposal of an analytical method for seismic design. Experimental studies were performed by two ways: forced vibration test, and earthquake observation against a rigid body model embedded in soil. Three analytical procedures were performed to compare experimental results and to examine the relation between each procedure. Finally, the dynamic behavior for nuclear reactor buildings with different embedded depths were evaluated by an analytical method. (orig.)

  13. Deeply Virtual Compton Scattering Studies at Jefferson Lab

    International Nuclear Information System (INIS)

    Sabatie, F.

    2010-11-01

    This document describes the early experimental effort at Jefferson Lab to unravel the Generalized Parton Distributions (GPD), using the Deeply Virtual Compton Scattering (DVCS) process. The GPDs contain the usual form factors and parton distribution functions, but in addition, they include correlations between states of different longitudinal and transverse momenta. They therefore give access to a three-dimensional picture of the nucleon. DVCS is the cleanest process allowing to extract GPDs, and as early as 2000, a number of experiments were proposed for this purpose. The results of the first exploratory experiments are presented as well as the first measurements of linear combinations of GPDs. In addition, a thorough discussion on the insights gained from these early experiments is proposed, linked with the theoretical tools used to extract GPDs from DVCS data. Finally, improvements on what was done for this first experimental phase are proposed and discussed, and new proposals and measurements are described. (author)

  14. Deeply virtual compton scattering on a virtual pion target

    International Nuclear Information System (INIS)

    Amrath, D.; Diehl, M.; Lansberg, J.P.; Heidelberg Univ.

    2008-07-01

    We study deeply virtual Compton scattering on a virtual pion that is emitted by a proton. Using a range of models for the generalized parton distributions of the pion, we evaluate the cross section, as well as the beam spin and beam charge asymmetries in the leading-twist approximation. Studying Compton scattering on the pion in suitable kinematics puts high demands on both beam energy and luminosity, and we find that the corresponding requirements will first be met after the energy upgrade at Jefferson Laboratory. As a by-product of our study, we construct a parameterization of pion generalized parton distributions that has a non-trivial interplay between the x and t dependence and is in good agreement with form factor data and lattice calculations. (orig.)

  15. Crystal growth velocity in deeply undercooled Ni-Si alloys

    Science.gov (United States)

    Lü, Y. J.

    2012-02-01

    The crystal growth velocity of Ni95Si5 and Ni90Si10 alloys as a function of undercooling is investigated using molecular dynamics simulations. The modified imbedded atom method potential yields the equilibrium liquidus temperatures T L ≈ 1505 and 1387 K for Ni95Si5 and Ni90Si10 alloys, respectively. From the liquidus temperatures down to the deeply undercooled region, the crystal growth velocities of both the alloys rise to the maximum with increasing undercooling and then drop slowly, whereas the athermal growth process presented in elemental Ni is not observed in Ni-Si alloys. Instead, the undercooling dependence of the growth velocity can be well-described by the diffusion-limited model, furthermore, the activation energy associated with the diffusion from melt to interface increases as the concentration increases from 5 to 10 at.% Si, resulting in the remarkable decrease of growth velocity.

  16. Deeply virtual compton scattering in color dipole formalism

    International Nuclear Information System (INIS)

    Machado, Magno V.T.

    2007-01-01

    In this contribution we summarize recent investigations on the Deeply Virtual Compton Scattering (DVCS) within the color dipole approach. The color dipole cross section is implemented through the phenomenological saturation model. The role played by its QCD evolution and skewedness effects in the DVCS cross section are discussed. The results are compared with the recent H1 and ZEUS Collaborations data. The skewing factor, defined as the ratio of the imaginary parts of the amplitudes Im A(γ* p → γ* p)/ Im A(γ* p → γ p) can be extracted from the data using recent DVCS and the inclusive inelastic cross section measurements at DESY-HERA. We report on this experimental extraction and compare the results to the theoretical predictions for NLO QCD and the color dipole approach. (author)

  17. The search for deeply bound kaonic states with FOPI

    International Nuclear Information System (INIS)

    Schmid, P.; Buehler, P.; Cargnelli, M.; Marton, J.; Widmann, E.; Zmeskal, J.

    2006-01-01

    Full text: New formation mechanisms for the creation of dense, exotic nuclear systems involving strangeness were recently proposed by Y. Akaishi and T. Yamazaki. Their calculations show that a K - might form deeply bound states in light nuclei - so called kaonic clusters - with central densities of several times the normal nuclear density. In the presentation a short overview of these exotic nuclear systems will be given and a new experiment with FOPI at GSI will be discussed. The aim of this experiment was to search for the simplest cluster - a ppK - state. This state is produced at GSI in the following high energy reaction: p + ''d'' → ppK - + K + + n'' with incident energies of 3.5 GeV. The experimental set-up will be presented in detail. (author)

  18. Deeply virtual Compton scattering from gauge/gravity duality

    Energy Technology Data Exchange (ETDEWEB)

    Costa, Miguel S.; Djuric, Marko [University of Porto (Portugal)

    2013-04-15

    We use gauge/gravity duality to study deeply virtual Compton scattering (DVCS) in the limit of high center of mass energy at fixed momentum transfer, corresponding to the limit of low Bjorken x, where the process is dominated by the exchange of the pomeron. At strong coupling, the pomeron is described as the graviton Regge trajectory in AdS space, with a hard wall to mimic confinement effects. This model agrees with HERA data in a large kinematical range. The behavior of the DVCS cross section for very high energies, inside saturation, can be explained by a simple AdS black disk model. In a restricted kinematical window, this model agrees with HERA data as well.

  19. Deeply virtual Compton scattering from gauge/gravity duality

    International Nuclear Information System (INIS)

    Costa, Miguel S.; Djurić, Marko

    2013-01-01

    We use gauge/gravity duality to study deeply virtual Compton scattering (DVCS) in the limit of high center of mass energy at fixed momentum transfer, corresponding to the limit of low Bjorken x, where the process is dominated by the exchange of the pomeron. At strong coupling, the pomeron is described as the graviton Regge trajectory in AdS space, with a hard wall to mimic confinement effects. This model agrees with HERA data in a large kinematical range. The behavior of the DVCS cross section for very high energies, inside saturation, can be explained by a simple AdS black disk model. In a restricted kinematical window, this model agrees with HERA data as well.

  20. Measurement of Deeply Virtual Compton Scattering at HERA

    CERN Document Server

    Aktas, A.; Anthonis, T.; Aplin, S.; Asmone, A.; Astvatsatourov, A.; Babaev, A.; Backovic, S.; Bahr, J.; Baghdasaryan, A.; Baranov, P.; Barrelet, E.; Bartel, W.; Baudrand, S.; Baumgartner, S.; Becker, J.; Beckingham, M.; Behnke, O.; Behrendt, O.; Belousov, A.; Berger, Ch.; Berger, N.; Bizot, J.C.; Boenig, M.-O.; Boudry, V.; Bracinik, J.; Brandt, G.; Brisson, V.; Brown, D.P.; Bruncko, D.; Busser, F.W.; Bunyatyan, A.; Buschhorn, G.; Bystritskaya, L.; Campbell, A.J.; Caron, S.; Cassol-Brunner, F.; Cerny, K.; Cerny, V.; Chekelian, V.; Contreras, J.G.; Coughlan, J.A.; Cox, B.E.; Cozzika, G.; Cvach, J.; Dainton, J.B.; Dau, W.D.; Daum, K.; de Boer, Y.; Delcourt, B.; Demirchyan, R.; De Roeck, A.; Desch, K.; De Wolf, E.A.; Diaconu, C.; Dodonov, V.; Dubak, A.; Eckerlin, Guenter; Efremenko, V.; Egli, S.; Eichler, R.; Eisele, F.; Ellerbrock, M.; Elsen, E.; Erdmann, W.; Essenov, S.; Falkewicz, A.; Faulkner, P.J.W.; Favart, L.; Fedotov, A.; Felst, R.; Ferencei, J.; Finke, L.; Fleischer, M.; Fleischmann, P.; Fleming, Y.H.; Flucke, G.; Fomenko, A.; Foresti, I.; Franke, G.; Frisson, T.; Gabathuler, E.; Garutti, E.; Gayler, J.; Gerlich, C.; Ghazaryan, Samvel; Ginzburgskaya, S.; Glazov, A.; Glushkov, I.; Goerlich, L.; Goettlich, M.; Gogitidze, N.; Gorbounov, S.; Goyon, C.; Grab, C.; Greenshaw, T.; Gregori, M.; Grell, B.R.; Grindhammer, Guenter; Gwilliam, C.; Haidt, D.; Hajduk, L.; Haller, J.; Hansson, M.; Heinzelmann, G.; Henderson, R.C.W.; Henschel, H.; Henshaw, O.; Herrera, G.; Hildebrandt, M.; Hiller, K.H.; Hoffmann, D.; Horisberger, R.; Hovhannisyan, A.; Ibbotson, M.; Ismail, M.; Jacquet, M.; Janauschek, L.; Janssen, X.; Jemanov, V.; Jonsson, L.; Johnson, D.P.; Jung, H.; Kapichine, M.; Katzy, J.; Keller, N.; Kenyon, I.R.; Kiesling, Christian M.; Klein, M.; Kleinwort, C.; Klimkovich, T.; Kluge, T.; Knies, G.; Knutsson, A.; Korbel, V.; Kostka, P.; Koutouev, R.; Krastev, K.; Kretzschmar, J.; Kropivnitskaya, A.; Kruger, K.; Kuckens, J.; Landon, M.P.J.; Lange, W.; Lastovicka, T.; Lastovicka-Medin, G.; Laycock, P.; Lebedev, A.; Leiner, B.; Lendermann, V.; Levonian, S.; Lindfeld, L.; Lipka, K.; List, B.; Lobodzinska, E.; Loktionova, N.; Lopez-Fernandez, R.; Lubimov, V.; Lucaci-Timoce, A.-I.; Lueders, H.; Luke, D.; Lux, T.; Lytkin, L.; Makankine, A.; Malden, N.; Malinovski, E.; Mangano, S.; Marage, P.; Marshall, R.; Martisikova, M.; Martyn, H.-U.; Maxeld, S.J.; Meer, D.; Mehta, A.; Meier, K.; Meyer, A.B.; Meyer, H.; Meyer, J.; Mikocki, S.; Milcewicz-Mika, I.; Milstead, D.; Mladenov, D.; Mohamed, A.; Moreau, F.; Morozov, A.; Morris, J.V.; Mozer, Matthias Ulrich; Muller, K.; Murin, P.; Nankov, K.; Naroska, B.; Naumann, Th.; Newman, Paul R.; Niebuhr, C.; Nikiforov, A.; Nikitin, D.; Nowak, G.; Nozicka, M.; Oganezov, R.; Olivier, B.; Olsson, J.E.; Osman, S.; Ozerov, D.; Palichik, V.; Panagoulias, I.; Papadopoulou, T.; Pascaud, C.; Patel, G.D.; Peez, M.; Perez, E.; Perez-Astudillo, D.; Perieanu, A.; Petrukhin, A.; Pitzl, D.; Placakyte, R.; Portheault, B.; Povh, B.; Prideaux, P.; Raicevic, N.; Reimer, P.; Rimmer, A.; Risler, C.; Rizvi, E.; Robmann, P.; Roland, B.; Roosen, R.; Rostovtsev, A.; Rurikova, Z.; Rusakov, S.; Salvaire, F.; Sankey, D.P.C.; Sauvan, E.; Schatzel, S.; Schilling, F.-P.; Schmidt, S.; Schmitt, S.; Schmitz, C.; Schoeffel, L.; Schoning, A.; Schroder, V.; Schultz-Coulon, H.-C.; Sedlak, K.; Sefkow, F.; Sheviakov, I.; Shtarkov, L.N.; Sirois, Y.; Sloan, T.; Smirnov, P.; Soloviev, Y.; South, D.; Spaskov, V.; Specka, Arnd E.; Stella, B.; Stiewe, J.; Strauch, I.; Straumann, U.; Tchoulakov, V.; Thompson, Graham; Thompson, P.D.; Tomasz, F.; Traynor, D.; Truoel, Peter; Tsakov, I.; Tsipolitis, G.; Tsurin, I.; Turnau, J.; Tzamariudaki, E.; Urban, Marcel; Usik, A.; Utkin, D.; Valkar, S.; Valkarova, A.; Vallee, C.; Van Mechelen, P.; Van Remortel, N.; Vargas Trevino, A.; Vazdik, Y.; Veelken, C.; Vest, A.; Vinokurova, S.; Volchinski, V.; Vujicic, B.; Wacker, K.; Wagner, J.; Weber, G.; Weber, R.; Wegener, D.; Werner, C.; Werner, N.; Wessels, M.; Wessling, B.; Wigmore, C.; Wissing, Ch.; Wolf, R.; Wunsch, E.; Xella, S.; Yan, W.; Yeganov, V.; Zacek, J.; Zalesak, J.; Zhang, Z.; Zhelezov, A.; Zhokin, A.; Zimmermann, J.; Zimmermann, T.; Zohrabyan, H.; Zomer, F.

    2005-01-01

    A measurement is presented of elastic deeply virtual Compton scattering \\gamma* p \\to \\gamma p made using e^+ p collision data corresponding to a luminosity of 46.5 pb^{-1}, taken with the H1 detector at HERA. The cross section is measured as a function of the photon virtuality, Q^2, the invariant mass of the \\gamma* p system, W, and for the first time, differentially in the squared momentum transfer at the proton vertex, t, in the kinematic range 2 < Q^2 < 80 GeV^2, 30 < W < 140 GeV and |t| < 1 GeV^2. QCD based calculations at next-to-leading order using generalized parton distributions can describe the data, as can colour dipole model predictions.

  1. Plasma etching of electrospun polymeric nanofibres

    Energy Technology Data Exchange (ETDEWEB)

    Verdonck, Patrick [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil)]. E-mail: verdonck@imec.be; Braga Caliope, Priscila [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Moral Hernandez, Emilio del [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); Silva, Ana Neilde R. da [LSI-PSI-EPUSP, Av. Prof. Luciano Gualberto trav 3, 158, 05508-900 Sao Paulo, SP (Brazil); FATEC-SP, Pca Fernando Prestes, 30 Sao Paulo, SP (Brazil)

    2006-10-25

    Electrospun polymeric nanofibres have several applications because of their high surface area to volume and high length to diameter ratios. This paper investigates the influence of plasma etching on these fibres and the etching mechanisms. For the characterization, SEM analysis was performed to determine the forms and shapes of the fibres and SEM photos were analysed by the technique of mathematical morphology, in order to determine the area on the sample occupied by the fibres and the frequency distribution of the nanofibre diameters. The results showed that the oxygen plasma etches the nanofibres much faster when ion bombardment is present. The form of the fibres is not altered by the etching, indicating the possibility of transport of oxygen atoms over the fibre surface. The most frequent diameter, somewhat surprisingly, is not significantly dependent on the etching process, and remains of the order of 80 nm, indicating that fibres with smaller diameters are etched at high rates.

  2. Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching.

    Science.gov (United States)

    Kong, Lingyu; Song, Yi; Kim, Jeong Dong; Yu, Lan; Wasserman, Daniel; Chim, Wai Kin; Chiam, Sing Yang; Li, Xiuling

    2017-10-24

    Producing densely packed high aspect ratio In 0.53 Ga 0.47 As nanostructures without surface damage is critical for beyond Si-CMOS nanoelectronic and optoelectronic devices. However, conventional dry etching methods are known to produce irreversible damage to III-V compound semiconductors because of the inherent high-energy ion-driven process. In this work, we demonstrate the realization of ordered, uniform, array-based In 0.53 Ga 0.47 As pillars with diameters as small as 200 nm using the damage-free metal-assisted chemical etching (MacEtch) technology combined with the post-MacEtch digital etching smoothing. The etching mechanism of In x Ga 1-x As is explored through the characterization of pillar morphology and porosity as a function of etching condition and indium composition. The etching behavior of In 0.53 Ga 0.47 As, in contrast to higher bandgap semiconductors (e.g., Si or GaAs), can be interpreted by a Schottky barrier height model that dictates the etching mechanism constantly in the mass transport limited regime because of the low barrier height. A broader impact of this work relates to the complete elimination of surface roughness or porosity related defects, which can be prevalent byproducts of MacEtch, by post-MacEtch digital etching. Side-by-side comparison of the midgap interface state density and flat-band capacitance hysteresis of both the unprocessed planar and MacEtched pillar In 0.53 Ga 0.47 As metal-oxide-semiconductor capacitors further confirms that the surface of the resultant pillars is as smooth and defect-free as before etching. MacEtch combined with digital etching offers a simple, room-temperature, and low-cost method for the formation of high-quality In 0.53 Ga 0.47 As nanostructures that will potentially enable large-volume production of In 0.53 Ga 0.47 As-based devices including three-dimensional transistors and high-efficiency infrared photodetectors.

  3. Etching radical controlled gas chopped deep reactive ion etching

    Science.gov (United States)

    Olynick, Deidre; Rangelow, Ivo; Chao, Weilun

    2013-10-01

    A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub.4 and controlling the passivation rate and stoichiometry using a CF.sub.2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

  4. Surface etching technologies for monocrystalline silicon wafer solar cells

    Science.gov (United States)

    Tang, Muzhi

    With more than 200 GW of accumulated installations in 2015, photovoltaics (PV) has become an important green energy harvesting method. The PV market is dominated by solar cells made from crystalline silicon wafers. The engineering of the wafer surfaces is critical to the solar cell cost reduction and performance enhancement. Therefore, this thesis focuses on the development of surface etching technologies for monocrystalline silicon wafer solar cells. It aims to develop a more efficient alkaline texturing method and more effective surface cleaning processes. Firstly, a rapid, isopropanol alcohol free texturing method is successfully demonstrated to shorten the process time and reduce the consumption of chemicals. This method utilizes the special chemical properties of triethylamine, which can form Si-N bonds with wafer surface atoms. Secondly, a room-temperature anisotropic emitter etch-back process is developed to improve the n+ emitter passivation. Using this method, 19.0% efficient screen-printed aluminium back surface field solar cells are developed that show an efficiency gain of 0.15% (absolute) compared with conventionally made solar cells. Finally, state-of-the-art silicon surface passivation results are achieved using hydrogen plasma etching as a dry alternative to the classical hydrofluoric acid wet-chemical process. The effective native oxide removal and the hydrogenation of the silicon surface are shown to be the reasons for the excellent level of surface passivation achieved with this novel method.

  5. Etching conditions and shape of tracks

    International Nuclear Information System (INIS)

    Kudo, Shuichi

    1979-01-01

    The etching effect of hydrogen fluoride (HF) solution of 5%, 10%, 20% and 46% was investigated, using the perlite dug out at Wada-toge, Japan. They were studied by the progressive etching at 30 deg C, after the perlite was subjected to thermal neutron irradiation for 8 hours in the research reactor of the Institute for Atomic Energy of St. Paul (Rikkyo) University. Observation was performed mainly by replica, and false tracks, which are difficult to be judged whether they are the tracks or not, didn't appear as far as this experiment was concerned. Measurements of etch-pits and track density were carried out. The results of these investigations were considered and analyzed to describe them in five sections. The conclusions are as follows: (1) Regarding the ease of etch-pit observation and the adjustment of etching time, etching with 5% HF solution is most advantageous among four solutions of 5, 10, 20 and 46% HF. (2) The measurement of track density is more affected by the difference in counting criteria than the difference in etching conditions. The data on the size of etch-pits are required to discuss the problems of track density and counting efficiency. (3) If linear tracks are to be observed using hydrogen fluoride, it is necessary to investigate the etching characteristics with the solution of lower concentration. (Wakatsuki, Y.)

  6. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  7. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  8. Etching.

    Science.gov (United States)

    1980-09-01

    4 - 0 2- G xC 0 .- 04.410Zt .0 f.-C 13-a U Z W:; LU OU SS 0 L = 0 . 6c C! tun a.- I- -. 4 *CZ=U K 0 2N 0 (3 A LWE’-0 Z W Z4 £C 0.C ?A C. V;, 4US CI US...z Q. cm -2 C’S *-D WX 4 an 0 N 4 W 0(A1 -O 0-C -C ZaW U. aNi x 400 C O CD0 0 00Ix - WA - C 0 0 C A. J -4 * 0-4 w~ aT L C M 0n N U- X ZOWO 2 %-0 IM

  9. Self-etch and etch-and-rinse adhesive systems in clinical dentistry.

    Science.gov (United States)

    Ozer, Fusun; Blatz, Markus B

    2013-01-01

    Current adhesive systems follow either an "etch-and-rinse" or "self-etch" approach, which differ in how they interact with natural tooth structures. Etch-and-rinse systems comprise phosphoric acid to pretreat the dental hard tissues before rinsing and subsequent application of an adhesive. Self-etch adhesives contain acidic monomers, which etch and prime the tooth simultaneously. Etch-and-rinse adhesives are offered as two- or three-step systems, depending on whether primer and bonding are separate or combined in a single bottle. Similarly, self-etch adhesives are available as one- or two-step systems. Both etch-and-rinse and self-etch systems form a hybrid layer as a result of resins impregnating the porous enamel or dentin. Despite current trends toward fewer and simpler clinical application steps, one-step dentin bonding systems exhibit bonding agent lower bond strengths and seem less predictable than multi-step etch-and-rinse and self-etch systems. The varying evidence available today suggests that the choice between etch-and-rinse and self-etch systems is often a matter of personal preference. In general, however, phosphoric acid creates a more pronounced and retentive etching pattern in enamel. Therefore, etch-and-rinse bonding systems are often preferred for indirect restorations and when large areas of enamel are still present. Conversely, self-etch adhesives provide superior and more predictable bond strength to dentin and are, consequently, recommended for direct composite resin restorations, especially when predominantly supported by dentin.

  10. Dry Eye

    Science.gov (United States)

    ... Eye » Facts About Dry Eye Listen Facts About Dry Eye Fact Sheet Blurb The National Eye Institute (NEI) ... and their families search for general information about dry eye. An eye care professional who has examined the ...

  11. Deeply virtual Compton scattering off longitudinally polarised protons at HERMES

    International Nuclear Information System (INIS)

    Mahon, David Francis

    2010-03-01

    This thesis details the simultaneous extraction of three polarisation-dependent asymmetries in the distribution of real photons from the ep→epγ interaction and its indistinguishable deeply virtual Compton scattering and Bethe-Heitler processes at the HERMES fixed-target experiment at Desy. The data analysed were taken using a longitudinally polarised 27.57 GeV positron beam incident on a longitudinally polarised hydrogen gas target. The extracted asymmetries include two single-spin asymmetries A UL and A LU which depend on the polarisation of the target and beam respectively, averaged over all other polarisation states. The double-spin asymmetry A LL dependent on the product of the beam and target polarisations is extracted for the first time. The asymmetry amplitudes extracted relate to combinations of Generalised Parton Distributions (GPDs), predominantly H and H. The extracted amplitudes are presented across the HERMES kinematic range alongside theoretical predictions from a GPD model based on double distributions. Large sin φ and cos(0φ) amplitudes are observed for A UL and A LL respectively, with an unexpectedly large sin(2φ) amplitude for A UL . The results for the A UL and A LL asymmetries are broadly compatible with theory predictions, and the extracted A LU amplitudes are compatible with HERMES results extracted from a significantly larger data set. It is foreseen that these results will form input to future global data-based GPD models which aim to provide a better understanding of GPDs. (orig.)

  12. Deeply virtual Compton scattering off unpolarised deuterium at HERMES

    Energy Technology Data Exchange (ETDEWEB)

    Hill, Gordon D.

    2008-10-15

    The HERMES experiment was a forward angle spectrometer on the HERA storage ring at DESY, Hamburg, Germany. HERMES successfully increased understanding of the ''spin puzzle'', the spin structure of the nucleon, by providing high precision measurements of {delta}{sigma} in the Quark Parton Model, the fraction of the spin carried by the current quarks. Following the link of another piece of the puzzle, the orbital angular momentum of quarks and gluons, to the Generalised Parton Distribution (GPD) theoretical framework, HERMES focused on measurements of the Deeply Virtual Compton Scattering (DVCS) process. These measurements are sensitive to GPDs, allowing further experimental constraints to be made on the components of nucleon spin. In the Winter shutdown period 2005-2006 HERMES was upgraded with a Recoil Detector in the target region. This allowed the experiment to make exclusive measurements of the DVCS process for the rst time, reducing background and increasing the resolution of various kinematic variables. The method for reconstructing particle tracks in the inhomogeneous magnetic eld is investigated here. DVCS o a deuterium target is measured with all available data prior to the installation of the Recoil Detector. A comparison is made to currently available models of spin-(1)/(2) GPDs. This analysis has been approved for publication by the HERMES collaboration. The data is further employed in an investigation of a model dependent constraint of the total angular momentum of up and down quarks in the nucleon. (orig.)

  13. Deeply virtual Compton scattering off unpolarised deuterium at HERMES

    International Nuclear Information System (INIS)

    Hill, Gordon D.

    2008-08-01

    The HERMES experiment was a forward angle spectrometer on the HERA storage ring at DESY, Hamburg, Germany. HERMES successfully increased understanding of the ''spin puzzle'', the spin structure of the nucleon, by providing high precision measurements of ΔΣ in the Quark Parton Model, the fraction of the spin carried by the current quarks. Following the link of another piece of the puzzle, the orbital angular momentum of quarks and gluons, to the Generalised Parton Distribution (GPD) theoretical framework, HERMES focused on measurements of the Deeply Virtual Compton Scattering (DVCS) process. These measurements are sensitive to GPDs, allowing further experimental constraints to be made on the components of nucleon spin. In the Winter shutdown period 2005-2006 HERMES was upgraded with a Recoil Detector in the target region. This allowed the experiment to make exclusive measurements of the DVCS process for the rst time, reducing background and increasing the resolution of various kinematic variables. The method for reconstructing particle tracks in the inhomogeneous magnetic eld is investigated here. DVCS o a deuterium target is measured with all available data prior to the installation of the Recoil Detector. A comparison is made to currently available models of spin-(1)/(2) GPDs. This analysis has been approved for publication by the HERMES collaboration. The data is further employed in an investigation of a model dependent constraint of the total angular momentum of up and down quarks in the nucleon. (orig.)

  14. Deeply virtual Compton scattering off unpolarised deuterium at HERMES

    Energy Technology Data Exchange (ETDEWEB)

    Hill, Gordon D

    2008-10-15

    The HERMES experiment was a forward angle spectrometer on the HERA storage ring at DESY, Hamburg, Germany. HERMES successfully increased understanding of the ''spin puzzle'', the spin structure of the nucleon, by providing high precision measurements of {delta}{sigma} in the Quark Parton Model, the fraction of the spin carried by the current quarks. Following the link of another piece of the puzzle, the orbital angular momentum of quarks and gluons, to the Generalised Parton Distribution (GPD) theoretical framework, HERMES focused on measurements of the Deeply Virtual Compton Scattering (DVCS) process. These measurements are sensitive to GPDs, allowing further experimental constraints to be made on the components of nucleon spin. In the Winter shutdown period 2005-2006 HERMES was upgraded with a Recoil Detector in the target region. This allowed the experiment to make exclusive measurements of the DVCS process for the rst time, reducing background and increasing the resolution of various kinematic variables. The method for reconstructing particle tracks in the inhomogeneous magnetic eld is investigated here. DVCS o a deuterium target is measured with all available data prior to the installation of the Recoil Detector. A comparison is made to currently available models of spin-(1)/(2) GPDs. This analysis has been approved for publication by the HERMES collaboration. The data is further employed in an investigation of a model dependent constraint of the total angular momentum of up and down quarks in the nucleon. (orig.)

  15. Deeply discounted medications: Implications of generic prescription drug wars.

    Science.gov (United States)

    Czechowski, Jessica L; Tjia, Jennifer; Triller, Darren M

    2010-01-01

    To describe the history of generic prescription pricing programs at major pharmacy chains and their potential implications on prescribing, quality of care, and patient safety. Publicly available generic prescription discount program drug lists as of May 1, 2009. Fierce competition among major pharmacy chains such as Walgreens, CVS, and Walmart has led to a generic prescription pricing war with unclear public health implications. Introduced in 2006, currently 7 of the 10 largest pharmacy chains advertise a version of a deeply discounted medication (DDM) program, accounting for more than 25,000 locations nationally. By early 2008, almost 70 million Americans had used these programs. Although DDM programs lower drug costs for many patients, DDM formularies include potentially ineffective or harmful medications, have the potential to influence physician prescribing behavior, and may impair pharmacists' ability to review complete drug-dispensing records. DDMs are widespread but have the potential for unintended consequences on patients, providers, and the health care system. A systematic review of DDMs needs to evaluate the clinical, economic, and system-level implications of such programs.

  16. Low-loss slot waveguides with silicon (111 surfaces realized using anisotropic wet etching

    Directory of Open Access Journals (Sweden)

    Kapil Debnath

    2016-11-01

    Full Text Available We demonstrate low-loss slot waveguides on silicon-on-insulator (SOI platform. Waveguides oriented along the (11-2 direction on the Si (110 plane were first fabricated by a standard e-beam lithography and dry etching process. A TMAH based anisotropic wet etching technique was then used to remove any residual side wall roughness. Using this fabrication technique propagation loss as low as 3.7dB/cm was realized in silicon slot waveguide for wavelengths near 1550nm. We also realized low propagation loss of 1dB/cm for silicon strip waveguides.

  17. Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

    Science.gov (United States)

    Li, Kun-Dar; Miao, Jin-Ru

    2018-02-01

    To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

  18. Modeling the characteristic etch morphologies along specific crystallographic orientations by anisotropic chemical etching

    Directory of Open Access Journals (Sweden)

    Kun-Dar Li

    2018-02-01

    Full Text Available To improve the advanced manufacturing technology for functional materials, a sophisticated control of chemical etching process is highly demanded, especially in the fields of environment and energy related applications. In this study, a phase-field-based model is utilized to investigate the etch morphologies influenced by the crystallographic characters during anisotropic chemical etching. Three types of etching modes are inspected theoretically, including the isotropic, and preferred oriented etchings. Owing to the specific etching behavior along the crystallographic directions, different characteristic surface structures are presented in the simulations, such as the pimple-like, pyramidal hillock and ridge-like morphologies. In addition, the processing parameters affecting the surface morphological formation and evolution are also examined systematically. According to the numerical results, the growth mechanism of surface morphology in a chemical etching is revealed distinctly. While the etching dynamics plays a dominant role on the surface formation, the characteristic surface morphologies corresponding to the preferred etching direction become more apparent. As the atomic diffusion turned into a determinative factor, a smoothened surface would appear, even under the anisotropic etching conditions. These simulation results provide fundamental information to enhance the development and application of anisotropic chemical etching techniques.

  19. Etching Behavior of Aluminum Alloy Extrusions

    Science.gov (United States)

    Zhu, Hanliang

    2014-11-01

    The etching treatment is an important process step in influencing the surface quality of anodized aluminum alloy extrusions. The aim of etching is to produce a homogeneously matte surface. However, in the etching process, further surface imperfections can be generated on the extrusion surface due to uneven materials loss from different microstructural components. These surface imperfections formed prior to anodizing can significantly influence the surface quality of the final anodized extrusion products. In this article, various factors that influence the materials loss during alkaline etching of aluminum alloy extrusions are investigated. The influencing variables considered include etching process parameters, Fe-rich particles, Mg-Si precipitates, and extrusion profiles. This study provides a basis for improving the surface quality in industrial extrusion products by optimizing various process parameters.

  20. Obtaining porous silicon suitable for sensor technology using MacEtch nonelectrolytic etching

    Directory of Open Access Journals (Sweden)

    Iatsunskyi I. R.

    2013-12-01

    Full Text Available The author suggests to use the etching method MacEtch (metal-assisted chemical etching for production of micro- and nanostructures of porous silicon. The paper presents research results on the morphology structures obtained at different parameters of deposition and etching processes. The research has shown that, depending on the parameters of deposition of silver particles and silicon wafers etching, the obtained surface morphology may be different. There may be both individual crater-like pores and developed porous or macroporous surface. These results indicate that the MacEtch etching is a promising method for obtaining micro-porous silicon nanostructures suitable for effective use in gas sensors and biological object sensors.

  1. Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

    International Nuclear Information System (INIS)

    Ashby, C.I.H.; Myers, D.R.

    1992-01-01

    This patent describes a process for selectively photochemically etching a semiconductor material. It comprises introducing at least one impurity into at least one selected region of a semiconductor material to be etched to increase a local impurity concentration in the at least one selected region relative to an impurity concentration in regions of the semiconductor material adjacent thereto, for reducing minority carrier lifetimes within the at least one selected region relative to the adjacent regions for thereby providing a photochemical etch-inhibiting mask at the at least one selected region; and etching the semiconductor material by subjecting the surface of the semiconductor material to a carrier-driven photochemical etching reaction for selectively etching the regions of the semiconductor material adjacent the at least one selected region having the increase impurity concentration; wherein the step of introducing at least one impurity is performed so as not to produce damage to the at least one selected region before any etching is performed

  2. Operating experience in processing of differently sourced deeply depleted uranium oxide and production of deeply depleted uranium metal ingots

    International Nuclear Information System (INIS)

    Manna, S.; Ladola, Y.S.; Sharma, S.; Chowdhury, S.; Satpati, S.K.; Roy, S.B.

    2009-01-01

    Uranium Metal Plant (UMP) of BARC had first time experience on production of three Depleted Uranium Metal (DUM) ingots of 76kg, 152kg and 163kg during March 1991. These ingots were produced by processing depleted uranyl nitrate solution produced at Plutonium Plant (PP), Trombay. In recent past Uranium Metal Plant (UMP), Uranium Extraction Division (UED), has been assigned to produce tonnage quantity of Deeply DUM (DDUM) from its oxide obtained from PP, PREFRE and RMP, BARC. This is required for shielding the high radioactive source of BHABHATRON Tele-cobalt machine, which is used for cancer therapy. The experience obtained in processing of various DDU oxides is being utilized for design of large scale DDU-metal plant under XIth plan project. The physico- chemical characteristics like morphology, density, flowability, reactivity, particle size distribution, which are having direct effect on reactivity of the powders of the DDU oxide powder, were studied and the shop-floor operational experience in processing of different oxide powder were obtained and recorded. During campaign trials utmost care was taken to standardized all operating conditions using the same equipment which are in use for natural uranium materials processing including safety aspects both with respect to radiological safety and industrial safety. Necessary attention and close monitoring were specially arranged and maintained for the safety aspects during the trial period. In-house developed pneumatic transport system was used for powder transfer and suitable dust arresting system was used for reduction of powder carry over

  3. Silicon germanium as a novel mask for silicon deep reactive ion etching

    KAUST Repository

    Serry, Mohamed Y.

    2013-10-01

    This paper reports on the use of p-type polycrystalline silicon germanium (poly-Si1-xGex) thin films as a new masking material for the cryogenic deep reactive ion etching (DRIE) of silicon. We investigated the etching behavior of various poly-Si1-xGex:B (0Etching selectivity for silicon, silicon oxide, and photoresist was determined at different etching temperatures, ICP and RF powers, and SF6 to O2 ratios. The study demonstrates that the etching selectivity of the SiGe mask for silicon depends strongly on three factors: Ge content; boron concentration; and etching temperature. Compared to conventional SiO2 and SiN masks, the proposed SiGe masking material exhibited several advantages, including high etching selectivity to silicon (>1:800). Furthermore, the SiGe mask was etched in SF6/O2 plasma at temperatures ≥ - 80°C and at rates exceeding 8 μm/min (i.e., more than 37 times faster than SiO2 or SiN masks). Because of the chemical and thermodynamic stability of the SiGe film as well as the electronic properties of the mask, it was possible to deposit the proposed film at CMOS backend compatible temperatures. The paper also confirms that the mask can easily be dry-removed after the process with high etching-rate by controlling the ICP and RF power and the SF6 to O2 ratios, and without affecting the underlying silicon substrate. Using low ICP and RF power, elevated temperatures (i.e., > - 80°C), and an adjusted O2:SF6 ratio (i.e., ~6%), we were able to etch away the SiGe mask without adversely affecting the final profile. Ultimately, we were able to develop deep silicon- trenches with high aspect ratio etching straight profiles. © 1992-2012 IEEE.

  4. Deeply virtual Compton scattering off longitudinally polarised protons at HERMES

    Energy Technology Data Exchange (ETDEWEB)

    Mahon, David Francis

    2010-06-15

    This thesis details the simultaneous extraction of three polarisation-dependent asymmetries in the distribution of real photons from the ep{yields}ep{gamma} interaction and its indistinguishable deeply virtual Compton scattering and Bethe-Heitler processes at the HERMES fixed-target experiment at Desy. The data analysed were taken using a longitudinally polarised 27.57 GeV positron beam incident on a longitudinally polarised hydrogen gas target. The extracted asymmetries include two single-spin asymmetries A{sub UL} and A{sub LU} which depend on the polarisation of the target and beam respectively, averaged over all other polarisation states. The double-spin asymmetry A{sub LL} dependent on the product of the beam and target polarisations is extracted for the first time. The asymmetry amplitudes extracted relate to combinations of Generalised Parton Distributions (GPDs), predominantly H and H. The extracted amplitudes are presented across the HERMES kinematic range alongside theoretical predictions from a GPD model based on double distributions. Large sin {phi} and cos(0{phi}) amplitudes are observed for A{sub UL} and A{sub LL} respectively, with an unexpectedly large sin(2{phi}) amplitude for A{sub UL}. The results for the A{sub UL} and A{sub LL} asymmetries are broadly compatible with theory predictions, and the extracted A{sub LU} amplitudes are compatible with HERMES results extracted from a significantly larger data set. It is foreseen that these results will form input to future global data-based GPD models which aim to provide a better understanding of GPDs. (orig.)

  5. Effects of the Addictives on Etching Characteristics of Aluminum Foil

    Energy Technology Data Exchange (ETDEWEB)

    Kim, S.K.; Jang, J.M.; Chi, C.S. [Kookmin University, Seoul (Korea); Shin, D.C. [Sungnam Polytechnic, Sungnam (Korea); Lee, J.H.; Oh, H.J. [Hanseo University, Seosan (Korea)

    2001-01-01

    The effects of additives in the HCI etching solution on etching behaviors of aluminium foil as dielectric film for electrolytic capacitors were investigated. The etch pits formed in 1M hydrochloric acid containing ethylene glycol as an additive contain more fine and homogeneous etch tunnels compared to thoese in 1 M hydrochloric acid only, which led to the increase in the effective internal surface area of aluminum foil. After anodizing of aluminum foil etched in etching solutions, the LCR meter results have shown that the capacitance of dielectric film etched in hydrochloric acid with ethylene glycol was increased remarkably compared to that etched in hydrochloric acid only. (author). 21 refs., 10 figs.

  6. Sputter etching of polymer fibres

    International Nuclear Information System (INIS)

    Carter, G.; Hill, A.E.; Nobes, M.J.; Jeffries, R.; Simmens, S.C.

    1979-01-01

    Fibres of polyamide, polyester and an aromatic polyamide (Kevlar) have been subjected to Ar + ion bombardment erosion in an ion accelerator or an rf discharge system. In the case of the former two polymers, cones are observed to develop upon the fibre surface and these are associated with etch protection resulting from the presence of particles of titanium dioxide pigment. This effect is absent in the third, unpigmented, fibre. In all cases ripple structures with a habit transverse to the fibre axes and of wavelength of approximately 1000 Angstrom are gradually developed during ion bombardment. It is suggested that this morphology results from an underlying periodicity of the fibre structure either inherent in the fibre structure or induced by the irradiation. (author)

  7. Study on morphology of high-aspect-ratio grooves fabricated by using femtosecond laser irradiation and wet etching

    International Nuclear Information System (INIS)

    Chen, Tao; Pan, An; Li, Cunxia; Si, Jinhai; Hou, Xun

    2015-01-01

    Highlights: • We studied morphologies of silicon grooves fabricated by laser irradiation and wet etching. • We found nano-ripple structures formed on the groove sidewall. • Formations of nano-ripples were due to the formation of standing wave and nanoplanes. • Remaining debris on the groove bottom was removed by KOH etching. - Abstract: Morphologies of high-aspect-ratio silicon grooves fabricated by using femtosecond laser irradiation and selective chemical etching of hydrofluoric acid (HF) were studied. Oxygen was deeply doped into silicon under femtosecond laser irradiation in air, and then the oxygen-doped regions were removed by HF etching to form high-aspect-ratio grooves. After HF etching, periodic nano-ripples which were induced in silicon by femtosecond laser were observed on the groove sidewalls. The ripple orientation was perpendicular or parallel to the laser propagation direction (z direction), which depended on the relative direction between the laser polarization direction and the scanning direction. The formation of nano-ripples with orientations perpendicular to z direction could be attributed to the standing wave generated by the interference of the incident light and the reflected light in z direction. The formation of nano-ripples with orientations parallel to z direction could be attributed to the formation of self-organized periodic nanoplanes (bulk nanogratings) induced by femtosecond laser inside silicon. Materials in the tail portion of laser-induced oxygen doping (LIOD) regions were difficult to be etched by HF solution due to low oxygen concentration. The specimen was etched further in KOH solution to remove remaining materials in LIOD regions and all-silicon grooves were fabricated

  8. Inductively coupled plasma etching of GaAs low loss waveguides for a traveling waveguide polarization converter, using chlorine chemistry

    Science.gov (United States)

    Lu, J.; Meng, X.; Springthorpe, A. J.; Shepherd, F. R.; Poirier, M.

    2004-05-01

    A traveling waveguide polarization converter [M. Poirier et al.] has been developed, which involves long, low loss, weakly confined waveguides etched in GaAs (epitaxially grown by molecular beam epitaxy), with electroplated ``T electrodes'' distributed along the etched floor adjacent to the ridge walls, and airbridge interconnect metallization. This article describes the development of the waveguide fabrication, based on inductively coupled plasma (ICP) etching of GaAs using Cl2 chemistry; the special processes required to fabricate the electrodes and metallization [X. Meng et al.], and the device characteristics [M. Poirier et al.], are described elsewhere. The required waveguide has dimensions nominally 4 μm wide and 2.1 μm deep, with dimensional tolerances ~0.1 μm across the wafer and wafer to wafer. A vertical etch profile with very smooth sidewalls and floors is required to enable the plated metal electrodes to be fabricated within 0.1 μm of the ridge. The ridges were fabricated using Cl2 ICP etching and a photoresist mask patterned with an I-line stepper; He backside cooling, combined with an electrostatic chuck, was employed to ensure good heat transfer to prevent resist reticulation. The experimental results showed that the ridge profile is very sensitive to ICP power and platen rf power. High ICP power and low platen power tend to result in more isotropic etching, whereas increasing platen power increases the photoresist etch rate, which causes rougher ridge sidewalls. No strong dependence of GaAs etch rate and ridge profile were observed with small changes in process temperature (chuck temperature). However, when the chuck temperature was decreased from 25 to 0 °C, etch uniformity across a 3 in. wafer improved from 6% to 3%. Photoresist and polymer residues present after the ICP etch were removed using a combination of wet and dry processes. .

  9. Inductively coupled plasma etching of GaAs low loss waveguides for a traveling waveguide polarization converter, using chlorine chemistry

    International Nuclear Information System (INIS)

    Lu, J.; Meng, X.; SpringThorpe, A.J.; Shepherd, F.R.; Poirier, M.

    2004-01-01

    A traveling waveguide polarization converter [M. Poirier et al.] has been developed, which involves long, low loss, weakly confined waveguides etched in GaAs (epitaxially grown by molecular beam epitaxy), with electroplated 'T electrodes' distributed along the etched floor adjacent to the ridge walls, and airbridge interconnect metallization. This article describes the development of the waveguide fabrication, based on inductively coupled plasma (ICP) etching of GaAs using Cl 2 chemistry; the special processes required to fabricate the electrodes and metallization [X. Meng et al.], and the device characteristics [M. Poirier et al.], are described elsewhere. The required waveguide has dimensions nominally 4 μm wide and 2.1 μm deep, with dimensional tolerances ∼0.1 μm across the wafer and wafer to wafer. A vertical etch profile with very smooth sidewalls and floors is required to enable the plated metal electrodes to be fabricated within 0.1 μm of the ridge. The ridges were fabricated using Cl 2 ICP etching and a photoresist mask patterned with an I-line stepper; He backside cooling, combined with an electrostatic chuck, was employed to ensure good heat transfer to prevent resist reticulation. The experimental results showed that the ridge profile is very sensitive to ICP power and platen rf power. High ICP power and low platen power tend to result in more isotropic etching, whereas increasing platen power increases the photoresist etch rate, which causes rougher ridge sidewalls. No strong dependence of GaAs etch rate and ridge profile were observed with small changes in process temperature (chuck temperature). However, when the chuck temperature was decreased from 25 to 0 deg. C, etch uniformity across a 3 in. wafer improved from 6% to 3%. Photoresist and polymer residues present after the ICP etch were removed using a combination of wet and dry processes

  10. Etch Defect Characterization and Reduction in Hard-Mask-Based Al Interconnect Etching

    International Nuclear Information System (INIS)

    Lee, H.J.; Hung, C.L.; Leng, C.H.; Lian, N.T.; Young, L.W.

    2009-01-01

    This paper identifies the defect adders, for example, post hard-mask etch residue, post metal etch residue, and blocked etch metal island and investigates the removal characteristics of these defects within the oxide-masked Al etching process sequence. Post hard-mask etch residue containing C atom is related to the hardening of photoresist after the conventional post-RIE ashing at 275 degree C. An in situ O 2 -based plasma ashing on RIE etcher was developed to prevent the photoresist hardening from the high-ashing temperature; followed wet stripping could successfully eliminate such hardened polymeric residue. Post metal etch residue was caused from the attack of the Al sidewall by Cl atoms, and too much CHF 3 addition in the Al main etch step passivated the surface of Al resulting in poor capability to remove the Al-containing residue. The lower addition of CHF 3 in the Al main etch step would benefit from the residue removal. One possibility of blocked etch metal island creating was due to the micro masking formed on the opening of Ti N during the hard-mask patterning. We report that an additional Ti N surface pretreatment with the Ar/CHF 3 /N 2 plasmas could reduce the impact of the micro masking residues on blocked metal etch.

  11. 25 CFR 215.25 - Other minerals and deep-lying lead and zinc minerals.

    Science.gov (United States)

    2010-04-01

    ... 25 Indians 1 2010-04-01 2010-04-01 false Other minerals and deep-lying lead and zinc minerals. 215.25 Section 215.25 Indians BUREAU OF INDIAN AFFAIRS, DEPARTMENT OF THE INTERIOR ENERGY AND MINERALS LEAD AND ZINC MINING OPERATIONS AND LEASES, QUAPAW AGENCY § 215.25 Other minerals and deep-lying lead...

  12. On Engaging with Others: A Wittgensteinian Approach to (Some) Problems with Deeply Held Beliefs

    Science.gov (United States)

    Bowell, Tracy

    2018-01-01

    My starting point for this paper is a problem in critical thinking pedagogy--the difficult of bringing students to a point where they are able, and motivated, critically to evaluate their own deeply held beliefs. I first interrogate the very idea of a deeply held belief, drawing upon Wittgenstein's idea of a framework belief--a belief that forms…

  13. Etching patterns on the micro‐ and nanoscale

    DEFF Research Database (Denmark)

    Michael-Lindhard, Jonas; Herstrøm, Berit; Stöhr, Frederik

    2014-01-01

    ‐ray beam down to a spot size of some 100 nm, the sidewalls of the cavities etched down to 300 μm into a silicon wafer must be perfectly straight and normal to the surface and have minimum roughness.The range of possible applications of the silicon etches is greatly extended if combined with electroplating...... and polymer injection molding. High precision patterns of, for instance microfluidic devices, are etched intosilicon which is then electroplated with nickel that will serve as a stamp in the polymer injection molding tool where thousands of devices may be replicated. In addition to silicon and its derived...

  14. Nanostructuring of Mo/Si multilayers by means of reactive ion etching using a three-level mask

    International Nuclear Information System (INIS)

    Dreeskornfeld, L.; Haindl, G.; Kleineberg, U.; Heinzmann, U.; Shi, F.; Volland, B.; Rangelow, I.W.; Majkova, E.; Luby, S.; Kostic,; Matay, L.; Hrkut, P.; Hudek, P.; Lee, H.-Y.

    2004-01-01

    Recently, Mo/Si multilayer reflectors have been gaining industry interest as a promising choice for the next generation extreme ultraviolet mask material for printing sub 70 nm feature size devices. A reactive ion etching system with optimized hardware using CHF 3 /Ar process regime shows the capability for highly anisotropic etching of sub congruent with 400 nm feature sizes in Mo/Si test multilayers with ten periods and a bilayer thickness of 7.8 nm which were prepared by e-beam evaporation. A three-level-mask technique consisting of a top resist mask layer poly-methyl-meth-acrylate, a middle hard amorphous Si mask layer and a bottom-level polyimide layer is used to create the etch mask. The etch characteristics of the polyimide film is shown to be one of the major factors determining the success of the described multilayer etching process. The developed etching technology demonstrates superior process performance without facets, excellent uniformity and good profile control. No contamination, degeneration or defect generation in the unetched multilayer structure could be detected. This non-conventional process results in minimum deposition during the etching thus eliminating the need for a dry or wet cleaning. Sidewall angles in Mo/Si multilayers of 85 deg. , without undercut, bowing and ripples resulting in smooth sidewalls are achieved

  15. Dry socket

    Science.gov (United States)

    Alveolar osteitis; Alveolitis; Septic socket ... You may be more at risk for dry socket if you: Have poor oral health Have a ... after having a tooth pulled Have had dry socket in the past Drink from a straw after ...

  16. Precise in situ etch depth control of multilayered III−V semiconductor samples with reflectance anisotropy spectroscopy (RAS equipment

    Directory of Open Access Journals (Sweden)

    Ann-Kathrin Kleinschmidt

    2016-11-01

    Full Text Available Reflectance anisotropy spectroscopy (RAS equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE of monocrystalline multilayered III–V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible.

  17. Transport through track etched polymeric blend membrane

    Indian Academy of Sciences (India)

    Unknown

    Department of Physics, University of Rajasthan, Jaipur 302 004, India. MS received 10 June 2005 ... Both the track and bulk etching takes place in the irradiated membrane. ... using rotating flywheel attachment, the details having been given ...

  18. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  19. Directional Etching of Silicon by Silver Nanostructures

    Science.gov (United States)

    Sharma, Pradeep; Wang, Yuh-Lin

    2011-02-01

    We report directional etching of nanostructures (nanochannels and nanotrenches) into the Si(100) substrates in aqueous HF and H2O2 solution by lithographically defined Ag patterns (nanoparticles, nanorods, and nanorings). The Effect of Ag/Si interface oxide on the directional etching has been studied by etching Ag/SiOx/Si samples of known interface oxide thickness. Based on high resolution transmission electron microscopy (HRTEM) imaging and TEM-energy dispersive X-ray (EDX) spectra of the Ag/Si interfaces, we propose that maintenance of the sub-nanometer oxide at the Ag/Si interfaces and Ag-Si interaction are the key factors which regulate the directional etching of Si.

  20. In vivo effect of a self-etching primer on dentin.

    Science.gov (United States)

    Milia, E; Lallai, M R; García-Godoy, F

    1999-08-01

    To determine the ultrastructural aspects of the dentin collagen area in the cavity preparation floor produced in vivo after phosphoric acid acid-etching or after using Clearfil Liner Bond 2 self-etching primer (LB2 Primer). Twenty-four non-carious third molars scheduled for extraction from young adult patients (16-30 years old) were used. Conventional Class I cavities (+/- 2 mm deep) were prepared on the occlusal surfaces of all teeth using a cylindrical diamond bur on a high-speed handpiece with copious water spray. To avoid dehydration of the dentin, the smear layer-covered dentin was briefly air-dried for 2 seconds. Cavities were assigned at random to the following groups: Group A: Dentin etched for 15 seconds with 34% phosphoric acid, rinsed for 20 seconds and then briefly air-dried for 2 seconds with oil-free compressed air leaving the surfaces slightly moist. Group B: LB2 Primer was applied to the cavity surfaces for 30 seconds and then briefly air-dried to remove the solvent. Group C: The untreated dentin smear layer was used as a control. In all three groups, the cavities were filled incrementally with a resin-based composite (APX), light curing every increment for 40 seconds. After 30 minutes, the teeth were extracted atraumatically and the samples immediately prepared for evaluation with the transmission electron microscope. The use of a self-etching primer did not produce significant morphological changes in the moist dentin substrate. Adverse morphological conditions where observed when there was an excess water on the dentin surface. Phosphoric acid altered the collagen more severely than the self-etching primer.

  1. Etching characteristics of a CR-39 track detector at room temperature in different etching solutions

    International Nuclear Information System (INIS)

    Dajko, G.

    1991-01-01

    Investigations were carried out to discover how the etching characteristics of CR-39 detectors change with varying conditions of the etching process. Measurements were made at room temperature in pure NaOH and KOH solutions; in different alcoholic KOH solutions (PEW solution, i.e. potassium hydroxide, ethyl alcohol, water); and in NaOH and KOH solutions containing different additives. The bulk etching rate of the detector (V B ) and the V (= V T /V B ) function, i.e. track to bulk etch rates ratio, for 6.1 MeV α-particles, were measured systematically. (author)

  2. Self-etching adhesive on intact enamel, with and without pre-etching.

    Science.gov (United States)

    Devarasa, G M; Subba Reddy, V V; Chaitra, N L; Swarna, Y M

    2012-05-01

    Bond strengths of composite resin to enamel using self-etch adhesive (SEA) Clearfil SE bond system on intact enamel and enamel pre-etched with phosphoric acid were compared. The objective was to determine if the pre-etching would increase the bond strengths of the SEA systems to intact enamel and to evaluate the effect of pre-etching on bond formation of self-etch adhesives on intact enamel. Labial surfaces of 40 caries free permanent upper central and lateral incisors were cleaned, sectioned of their roots. All specimens were mounted on acrylic block and divided randomly into four groups. In two groups the application of self-etch adhesive, Clearfil SE bond was carried as per manufacturer's instructions, composite cylinders were built, whereas in the other two groups, 37% phosphoric acid etching was done before the application of self-etching adhesives. Then the resin tags were analyzed using scanning electron microscope and shear bond strength was measured using Instron universal testing machine. When phosphoric acid was used, there was significant increase in the depth of penetration of resin tags and in the Shear Bond Strength of composite to enamel. The results indicate that out of both treatment groups, pre-etching the intact enamel with 37% phosphoric acid resulted in formation of longer resin tags and higher depth of penetration of resin tags of the Clearfil SE bond, and attaining higher bond strength of the Clearfil SE bond to intact enamel. Copyright © 2011 Wiley Periodicals, Inc.

  3. Shear bond strength of self-etch adhesives to enamel with additional phosphoric acid etching.

    Science.gov (United States)

    Lührs, Anne-Katrin; Guhr, Silke; Schilke, Reinhard; Borchers, Lothar; Geurtsen, Werner; Günay, Hüsamettin

    2008-01-01

    This study evaluated the shear bond strength of self-etch adhesives to enamel and the effect of additional phosphoric acid etching. Seventy sound human molars were randomly divided into three test groups and one control group. The enamel surfaces of the control group (n=10) were treated with Syntac Classic (SC). Each test group was subdivided into two groups (each n=10). In half of each test group, ground enamel surfaces were coated with the self-etch adhesives AdheSe (ADH), Xeno III (XE) or Futurabond NR (FNR). In the remaining half of each test group, an additional phosphoric acid etching of the enamel surface was performed prior to applying the adhesives. The shear bond strength was measured with a universal testing machine at a crosshead speed of 1 mm/minute after storing the samples in distilled water at 37 degrees C for 24 hours. Fracture modes were determined by SEM examination. For statistical analysis, one-way ANOVA and the two-sided Dunnett Test were used (p>0.05). Additional phosphoric etching significantly increased the shear bond strength of all the examined self-etch adhesives (padhesive fractures. For all the self-etch adhesives, a slight increase in mixed fractures occurred after conditioning with phosphoric acid. An additional phosphoric acid etching of enamel should be considered when using self-etch adhesives. More clinical studies are needed to evaluate the long-term success of the examined adhesives.

  4. Plasma/Neutral-Beam Etching Apparatus

    Science.gov (United States)

    Langer, William; Cohen, Samuel; Cuthbertson, John; Manos, Dennis; Motley, Robert

    1989-01-01

    Energies of neutral particles controllable. Apparatus developed to produce intense beams of reactant atoms for simulating low-Earth-orbit oxygen erosion, for studying beam-gas collisions, and for etching semiconductor substrates. Neutral beam formed by neutralization and reflection of accelerated plasma on metal plate. Plasma ejected from coaxial plasma gun toward neutralizing plate, where turned into beam of atoms or molecules and aimed at substrate to be etched.

  5. Plasma etching: Yesterday, today, and tomorrow

    Energy Technology Data Exchange (ETDEWEB)

    Donnelly, Vincent M.; Kornblit, Avinoam [Department of Chemical and Biomolecular Engineering, University of Houston, Houston, Texas 77204 (United States)

    2013-09-15

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

  6. Plasma etching: Yesterday, today, and tomorrow

    International Nuclear Information System (INIS)

    Donnelly, Vincent M.; Kornblit, Avinoam

    2013-01-01

    The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices

  7. Earthquakes - a danger to deep-lying repositories?; erdbeben: eine gefahr fuer tiefenlager?

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2012-03-15

    This booklet issued by the Swiss National Cooperative for the Disposal of Radioactive Waste NAGRA takes a look at geological factors concerning earthquakes and the safety of deep-lying repositories for nuclear waste. The geological processes involved in the occurrence of earthquakes are briefly looked at and the definitions for magnitude and intensity of earthquakes are discussed. Examples of damage caused by earthquakes are given. The earthquake situation in Switzerland is looked at and the effects of earthquakes on sub-surface structures and deep-lying repositories are discussed. Finally, the ideas proposed for deep-lying geological repositories for nuclear wastes are discussed.

  8. III-Nitride Blue Laser Diode with Photoelectrochemically Etched Current Aperture

    Science.gov (United States)

    Megalini, Ludovico

    Group III-nitride is a remarkable material system to make highly efficient and high-power optoelectronics and electronic devices because of the unique electrical, physical, chemical and structural properties it offers. In particular, InGaN-based blue Laser Diodes (LDs) have been successfully employed in a variety of applications ranging from biomedical and military devices to scientific instrumentation and consumer electronics. Recently their use in highly efficient Solid State Lighting (SSL) has been proposed because of their superior beam quality and higher efficiency at high input power density. Tremendous advances in research of GaN semi-polar and non-polar crystallographic planes have led both LEDs and LDs grown on these non-basal planes to rival with, and with the promise to outperform, their equivalent c-plane counterparts. However, still many issues need to be addressed, both related to material growth and device fabrication, including a lack of conventional wet etching techniques. GaN and its alloys with InN and AlN have proven resistant essentially to all known standard wet etching techniques, and the predominant etching methods rely on chlorine-based dry etching (RIE). These introduce sub-surface damage which can degrade the electrical properties of the epitaxial structure and reduce the reliability and lifetime of the final device. Such reasons and the limited effectiveness of passivation techniques have so far suggested to etch the LD ridges before the active region, although it is well-known that this can badly affect the device performance, especially in narrow stripe width LDs, because the gain guiding obtained in the planar configuration is weak and the low index step and high lateral current leakage result in devices with threshold current density higher than devices whose ridge is etched beyond the active region. Moreover, undercut etching of III-nitride layers has proven even more challenging, with limitations in control of the lateral etch

  9. An etching mask and a method to produce an etching mask

    DEFF Research Database (Denmark)

    2016-01-01

    The present invention relates to an etching mask comprising silicon containing block copolymers produced by self-assembly techniques onto silicon or graphene substrate. Through the use of the etching mask, nanostructures having long linear features having sub-10 nm width can be produced....

  10. Effect of pre-etching on sealing ability of two current self-etching adhesives

    Directory of Open Access Journals (Sweden)

    K Khosravi

    2005-05-01

    Full Text Available Background: We evaluated the effect of phosphoric acid etching on microleakage of two current self-etching adhesives on enamel margins in comparison to a conventional total- etch system. Methods: Sixty buccal class V cavities were made at the cemento-enamel junction with beveled enamel margins of extracted human premolar teeth and randomly divided into five groups (12 specimens in each group. Group 1 was applying with Clearfil SE bond, Group 2 with 35% phosphoric acid etching of enamel margins plus Clearfil SE bond, Group3 with I bond, Group 4 with 35% phosphoric acid etching of enamel margins plus I bond and Group5 with Scotchbond multi-purpose. All groups restored with a composite resins. After 24 hours storage with 100% humidity, the samples were thermocycled, immersed in a dye solution and sectioned buccoligually and enamel margins microleakage were evaluated on a scale of 0 to 2. Results: The differences between Groups 1 & 3 and Groups 3 & 4 were significant (P<0.05 but no significant differences between Groups1 & 2 or 1 & 5 were observed. Conclusion: The findings suggest that all-in-one adhesive systems need pre-etching enamel margins with phosphoric acid for effectively seal. Key words: Self-Etching Adhesives, Microleakage, Enamel, Total-Etch system

  11. Determination of the rate of energy partition in deeply inelastic collisions

    International Nuclear Information System (INIS)

    Lazzarini, A.; Vandenbosch, R.

    1984-01-01

    We discuss how excitation energy is partitioned in a deeply inelastic collision. Using the nucleon exchange mechanism for the deep inelastic scattering process, it is possible to draw on existing information about the evolution of the charge and mass distributions with energy loss and combine this with recent information on the partition of excitation energy in deeply inelastic collisions to obtain rates of heating for the two reaction partners

  12. Copper-assisted, anti-reflection etching of silicon surfaces

    Science.gov (United States)

    Toor, Fatima; Branz, Howard

    2014-08-26

    A method (300) for etching a silicon surface (116) to reduce reflectivity. The method (300) includes electroless deposition of copper nanoparticles about 20 nanometers in size on the silicon surface (116), with a particle-to-particle spacing of 3 to 8 nanometers. The method (300) includes positioning (310) the substrate (112) with a silicon surface (116) into a vessel (122). The vessel (122) is filled (340) with a volume of an etching solution (124) so as to cover the silicon surface (116). The etching solution (124) includes an oxidant-etchant solution (146), e.g., an aqueous solution of hydrofluoric acid and hydrogen peroxide. The silicon surface (116) is etched (350) by agitating the etching solution (124) with, for example, ultrasonic agitation, and the etching may include heating (360) the etching solution (124) and directing light (365) onto the silicon surface (116). During the etching, copper nanoparticles enhance or drive the etching process.

  13. Plasma etching of niobium-SiO/sub x/ layers

    International Nuclear Information System (INIS)

    Schelle, D.; Tiller, H.J.

    1986-01-01

    CF 4 -plasma etching of niobium and SiO/sub x/ layers has been investigated in a r.f. diode reactor. Etch rates increase linearly with increasing power density and also increase with pressure. The etch rate ratio can be changed using different etch gases or operating in different plasma modes (PE or IEPE). Changing from the ion enhanced plasma etching mode (IEPE) to plasma etching mode (PE) the etch rate ratio is changing by a factor of ten. On the basis of etch rate dependences on process parametes and thermodynamic data it has been suggested the generation of fluorine radicals as the rate limiting step. A general etching model has been proposed, which explains qualitatively and quantitatively (on account of data from literature) the measured results. (author)

  14. Reactive ion etching of microphotonic structures

    International Nuclear Information System (INIS)

    Du, J.; Glasscock, J.; Vanajek, J.; Savvides, N.

    2004-01-01

    Full text: Fabrication of microphotonic structures such as planar waveguides and other periodic structures based on silicon technology has become increasingly important due to the potential for integration of planar optical devices. We have fabricated various periodic microstructures on silicon wafers using standard optical lithography and reactive ion etching (RIE). For optical applications the surface roughness and the sidewall angle or steepness of microstructures are the most critical factors. In particular, sidewall roughness of the etched waveguide core accounts for most of the optical propagation loss. We show that by varying the main RIE parameters such as gas pressure, RF power and CF 4 /Ar/O 2 gas composition it is possible to produce microstructures with near-vertical sidewalls and very smooth surfaces. In addition to plasma etching conditions, poor edge quality of the mask often causes sidewall roughness. We employed Ni/Cr metal masks in these experiments for deep etching, and used Ar + ion milling instead of wet chemical etching to open the mask. This improves the edge quality of the mask and ultimately results in smooth sidewalls

  15. Plasma etching a ceramic composite. [evaluating microstructure

    Science.gov (United States)

    Hull, David R.; Leonhardt, Todd A.; Sanders, William A.

    1992-01-01

    Plasma etching is found to be a superior metallographic technique for evaluating the microstructure of a ceramic matrix composite. The ceramic composite studied is composed of silicon carbide whiskers (SiC(sub W)) in a matrix of silicon nitride (Si3N4), glass, and pores. All four constituents are important in evaluating the microstructure of the composite. Conventionally prepared samples, both as-polished or polished and etched with molten salt, do not allow all four constituents to be observed in one specimen. As-polished specimens allow examination of the glass phase and porosity, while molten salt etching reveals the Si3N4 grain size by removing the glass phase. However, the latter obscures the porosity. Neither technique allows the SiC(sub W) to be distinguished from the Si3N4. Plasma etching with CF4 + 4 percent O2 selectively attacks the Si3N4 grains, leaving SiC(sub W) and glass in relief, while not disturbing the pores. An artifact of the plasma etching reaction is the deposition of a thin layer of carbon on Si3N4, allowing Si3N4 grains to be distinguished from SiC(sub W) by back scattered electron imaging.

  16. Effect of collagen fibrils removal on shear bond strength of total etch and self etch adhesive systems

    Directory of Open Access Journals (Sweden)

    Pishevar L.

    2009-12-01

    Full Text Available "nBackground and Aim: Sodium hypochlorite can remove the organic phase of the demineralized dentin and it produces direct resin bonding with hydroxyapatite crystals. Therefore, the hydrolytic degradation of collagen fibrils which might affect the bonding durability is removed. The aim of this study was to evaluate the effect of collagen fibrils removal by 10% NaOCl on dentin shear bond strength of two total etch and self etch adhesive systems."nMaterials and Methods: Sixty extracted human premolar teeth were used in this study. Buccal surface of teeth were grounded until dentin was exposed. Then teeth were divided into four groups. According to dentin surface treatment, experimental groups were as follows: Group I: Single Bond (3M according to manufacture instruction, Group II: 10% NaOCl+Single bond (3M, Group III: Clearfil SE Bond (Kuraray according to manufacture instruction, and Group IV: Clearfil SE Bond primer. After that, the specimens were immersed in 50% acetone solution for removing extra monomer. Then the specimens were rinsed and dried. 10% NaOCl was applied and finally adhesive was used. Then composite was bonded to the treated surfaces using a 4 2 mm cylindrical plastic mold. Specimens were thermocycled for 500 cycles (5-55ºC. A shear load was employed by a universal testing machine with a cross head speed of 1mm/min. The data were analyzed for statistical significance with One-way ANOVA, Two-way ANOVA and Tukey HSD post-hoc tests."nResults: The mean shear bond strengths of groups were as follows: Single Bond=16.8±4.2, Clearfil SE Bond=23.7±4.07, Single Bond+NaOCl=10.5±4.34, Clearfil SE Bond+NaOCl=23.3±3.65 MPa. Statistical analysis revealed that using 10% NaOCl significantly decreased the shear bond strength in Single Bond group (P=0.00, but caused no significant difference in the shear bond strength in Clearfil SE Bond group (P=0.99."nConclusion: Based on the results of this study, NaOCl treatment did not improve the bond

  17. High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma

    International Nuclear Information System (INIS)

    Joo, Young-Hee; Kim, Chang-Il

    2015-01-01

    We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF 4 /Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700 W, a DC-bias voltage of − 150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF 4 /Ar(= 25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF 4 /Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. - Highlights: • IGZO thin film was etched by CF 4 /Ar plasma as a function of gas mixing ratio. • IGZO bonds were broken Ar + sputtering and then reacted with the C-F x radicals. • The physical sputtering is dominant in etch control compared with chemical etching

  18. Ga+ focused-ion-beam implantation-induced masking for H2 etching of ZnO films

    International Nuclear Information System (INIS)

    Fang, Hsin-Chiao; Huang, Jun-Han; Chu, Wen-Huei; Liu, Chuan-Pu

    2010-01-01

    Gallium implantation of ZnO by a focused-ion beam is used to create a mask for ZnO dry etching with hydrogen. Effects of Ga + fluence on the etch stop properties and the associated mechanisms are investigated. The fluence of 2.8 x 10 16 cm -2 is determined to be optimum to render the best mask quality. While lower fluences would cause less etching selectivity, higher fluences would cause erosion of the surface and particles to be precipitated on the surface after H 2 treatment at high temperature. In contrast to the commonly adopted gallium oxide formation on Si, transmission electron microscopy analysis reveals that, for the fluences ≤ 2.8 x 10 16 cm -2 , Ga + ions are incorporated as dopants into ZnO without any second phases or precipitates, indicating the Ga-doped ZnO layer behaves as a mask for H 2 etching due to the higher electronegativity of Ga + towards oxygen. However, for the fluences ≥ 4.6 x 10 16 cm -2 , the surface particles are responsible for the etch stop and are identified as ZnGa 2 O 4 . We finally demonstrate a complicated pattern of 'NCKU' on ZnO by using this technique. The study not only helps clarify the related mechanisms, but also suggests a feasible extension of the etch stop process that can be applied to more functional material.

  19. Model calculations for electrochemically etched neutron detectors

    International Nuclear Information System (INIS)

    Pitt, E.; Scharmann, A.; Werner, B.

    1988-01-01

    Electrochemical etching has been established as a common method for visualisation of nuclear tracks in solid state nuclear track detectors. Usually the Mason equation, which describes the amplification of the electrical field strength at the track tip, is used to explain the treeing effect of electrochemical etching. The yield of neutron-induced tracks from electrochemically etched CR-39 track detectors was investigated with respect to the electrical parameters. A linear dependence on the response from the macroscopic field strength was measured which could not be explained by the Mason equation. It was found that the reality of a recoil proton track in the detector does not fit the boundary conditions which are necessary when the Mason equation is used. An alternative model was introduced to describe the track and detector geometry in the case of a neutron track detector. The field strength at the track tip was estimated with this model and compared with the experimental data, yielding good agreement. (author)

  20. Pattern transfer with stabilized nanoparticle etch masks

    International Nuclear Information System (INIS)

    Hogg, Charles R; Majetich, Sara A; Picard, Yoosuf N; Narasimhan, Amrit; Bain, James A

    2013-01-01

    Self-assembled nanoparticle monolayer arrays are used as an etch mask for pattern transfer into Si and SiO x substrates. Crack formation within the array is prevented by electron beam curing to fix the nanoparticles to the substrate, followed by a brief oxygen plasma to remove excess carbon. This leaves a dot array of nanoparticle cores with a minimum gap of 2 nm. Deposition and liftoff can transform the dot array mask into an antidot mask, where the gap is determined by the nanoparticle core diameter. Reactive ion etching is used to transfer the dot and antidot patterns into the substrate. The effect of the gap size on the etching rate is modeled and compared with the experimental results. (paper)

  1. Bond strength of self-etch adhesives after saliva contamination at different application steps.

    Science.gov (United States)

    Cobanoglu, N; Unlu, N; Ozer, F F; Blatz, M B

    2013-01-01

    This study evaluated and compared the effect of saliva contamination and possible decontamination methods on bond strengths of two self-etching adhesive systems (Clearfil SE Bond [CSE], Optibond Solo Plus SE [OSE]). Flat occlusal dentin surfaces were created on 180 extracted human molar teeth. The two bonding systems and corresponding composite resins (Clearfil AP-X, Kerr Point 4) were bonded to the dentin under six surface conditions (n=15/group): group 1 (control): primer/bonding/composite; group 2: saliva/drying/primer/bonding/composite; group 3: primer/saliva/rinsing/drying/primer/bonding/composite; group 4: primer/saliva/rinsing/drying/bonding/composite; group 5: primer/bonding (cured)/saliva/rinsing/drying/primer/bonding/composite; group 6: primer/bonding (cured)/saliva/removing contaminated layer with a bur/rinsing/drying/primer/bonding/composite. Shear bond strength was tested after specimens were stored in distilled water at 37°C for 24 hours. One-way analysis of variance and Tukey post hoc tests were used for statistical analyses. For CSE, groups 2, 3, and 4 and for OSE, groups 6, 2, and 4 showed significantly lower bond strengths than the control group (pcontamination occurred after light polymerization of the bonding agent, repeating the bonding procedure recovered the bonding capacity of both self-etch adhesives. However, saliva contamination before or after primer application negatively affected their bond strength.

  2. Etching of fused silica fiber by metallic laser-induced backside wet etching technique

    Energy Technology Data Exchange (ETDEWEB)

    Vass, Cs., E-mail: vasscsaba@physx.u-szeged.hu [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary); Kiss, B.; Kopniczky, J.; Hopp, B. [Department of Optics and Quantum Electronics, University of Szeged, H-6720 Szeged, Dóm tér 9 (Hungary)

    2013-08-01

    The tip of multimode fused silica fiber (core diameter: 550 μm) was etched by metallic laser-induced backside wet etching (M-LIBWE) method. Frequency doubled, Q-switched Nd:YAG laser (λ = 532 nm; τ{sub FWHM} = 8 ns) was used as laser source. The laser beam was coupled into the fiber by a fused silica lens with a focal length of 1500 mm. The other tip of the fiber was dipped into liquid gallium metallic absorber. The etching threshold fluence was measured to be 475 mJ/cm{sup 2}, while the highest fluence, which resulted etching without breaking the fiber, was 1060 mJ/cm{sup 2}. The progress of etching was followed by optical microscopy, and the etch rate was measured to be between 20 and 37 nm/pulse depending on the applied laser energy. The surface morphologies of the etched tips were studied by scanning electron microscopy. A possible application of the structured fibers was also tested.

  3. Etching of fused silica fiber by metallic laser-induced backside wet etching technique

    International Nuclear Information System (INIS)

    Vass, Cs.; Kiss, B.; Kopniczky, J.; Hopp, B.

    2013-01-01

    The tip of multimode fused silica fiber (core diameter: 550 μm) was etched by metallic laser-induced backside wet etching (M-LIBWE) method. Frequency doubled, Q-switched Nd:YAG laser (λ = 532 nm; τ FWHM = 8 ns) was used as laser source. The laser beam was coupled into the fiber by a fused silica lens with a focal length of 1500 mm. The other tip of the fiber was dipped into liquid gallium metallic absorber. The etching threshold fluence was measured to be 475 mJ/cm 2 , while the highest fluence, which resulted etching without breaking the fiber, was 1060 mJ/cm 2 . The progress of etching was followed by optical microscopy, and the etch rate was measured to be between 20 and 37 nm/pulse depending on the applied laser energy. The surface morphologies of the etched tips were studied by scanning electron microscopy. A possible application of the structured fibers was also tested.

  4. Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Joglekar, S.; Azize, M.; Palacios, T. [Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Beeler, M.; Monroy, E. [Université Grenoble-Alpes, 38000 Grenoble (France); CEA Grenoble, INAC-PHELIQS, 38000 Grenoble (France)

    2016-07-25

    Ohmic contacts fabricated by regrowth of n{sup +} GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.

  5. Atomic Layer Etching of Silicon to Solve ARDE-Selectivity-Profile-Uniformity Trade-Offs

    Science.gov (United States)

    Wang, Mingmei; Ranjan, Alok; Ventzek, Peter; Koshiishi, Akira

    2014-10-01

    With shrinking critical dimensions, dry etch faces more and more challenges. Minimizing each of aspect ratio dependent etching (ARDE), bowing, undercut, selectivity, and within die uniformly across a wafer are met by trading off one requirement against another. At the root of the problem is that roles radical flux, ion flux and ion energy play may be both good and bad. Increasing one parameter helps meeting one requirement but hinders meeting the other. Self-limiting processes like atomic layer etching (ALE) promise a way to escape the problem of balancing trade-offs. ALE was realized in the mid-1990s but the industrial implementation has been slow. In recent years interest in ALE has revived. We present how ARDE, bowing/selectivity trade-offs may be overcome by varying radical/ion ratio, byproduct re-deposition. We overcome many of the practical implementation issues associated with ALE by precise passivation process control. The Monte Carlo Feature Profile Model (MCFPM) is used to illustrate realistic scenarios built around an Ar/Cl2 chemistry driven etch of Si masked by SiO2. We demonstrate that ALE can achieve zero ARDE and infinite selectivity. Profile control depends on careful management of the ion energies and angles. For ALE to be realized in production environment, tight control of IAD is a necessary. Experimental results are compared with simulation results to provide context to the work.

  6. DURIP 99 - Instrumentation for Deposition and Etching of Ferromagnetic Nanoparticles

    National Research Council Canada - National Science Library

    Kummel, Andrew

    2000-01-01

    .... Since silver is much more difficult to etch than iron due to the lack of volatile silver halides, this spontaneous coating of Fe by Ag explains the difficulty in etching Fe particles deposited on Ag substrates. (b...

  7. Influence of different pre-etching times on fatigue strength of self-etch adhesives to dentin.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Suzuki, Takayuki; Scheidel, Donal D; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    2016-04-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue strength (SFS) testing to determine the influence on dentin bonding of phosphoric acid pre-etching times before the application of self-etch adhesives. Two single-step self-etch universal adhesives [Prime & Bond Elect (EL) and Scotchbond Universal (SU)], a conventional single-step self-etch adhesive [G-aenial Bond (GB)], and a two-step self-etch adhesive [OptiBond XTR (OX)] were used. The SBS and SFS values were obtained with phosphoric acid pre-etching times of 3, 10, or 15 s before application of the adhesives, and for a control without pre-etching. For groups with 3 s of pre-etching, SU and EL showed higher SBS values than control groups. No significant difference was observed for GB among the 3 s, 10 s, and control groups, but the 15 s pre-etching group showed significantly lower SBS and SFS values than the control group. No significant difference was found for OX among the pre-etching groups. Reducing phosphoric acid pre-etching time can minimize the adverse effect on dentin bonding durability for the conventional self-etch adhesives. Furthermore, a short phosphoric acid pre-etching time enhances the dentin bonding performance of universal adhesives. © 2016 Eur J Oral Sci.

  8. Optimization of the etch-and-rinse technique: New perspectives to improve resin-dentin bonding and hybrid layer integrity by reducing residual water using dimethyl sulfoxide pretreatments.

    Science.gov (United States)

    Stape, Thiago Henrique Scarabello; Tjäderhane, Leo; Abuna, Gabriel; Sinhoreti, Mário Alexandre Coelho; Martins, Luís Roberto Marcondes; Tezvergil-Mutluay, Arzu

    2018-04-13

    To determine whether bonding effectiveness and hybrid layer integrity on acid-etched dehydrated dentin would be comparable to the conventional wet-bonding technique through new dentin biomodification approaches using dimethyl sulfoxide (DMSO). Etched dentin surfaces from extracted sound molars were randomly bonded in wet or dry conditions (30s air drying) with DMSO/ethanol or DMSO/H 2 O as pretreatments using a simplified (Scotchbond Universal Adhesive, 3M ESPE: SU) and a multi-step (Adper Scotchbond Multi-Purpose, 3M ESPE: SBMP) etch-and-rinse adhesives. Untreated dentin surfaces served as control. Bonded teeth (n=8) were stored in distilled water for 24h and sectioned into resin-dentin beams (0.8mm 2 ) for microtensile bond strength test and quantitative interfacial nanoleakage analysis (n=8) under SEM. Additional teeth (n=2) were prepared for micropermeability assessment by CFLSM under simulated pulpar pressure (20cm H 2 O) using 5mM fluorescein as a tracer. Microtensile data was analyzed by 3-way ANOVA followed by Tukey Test and nanoleakage by Kruskal-Wallis and Dunn-Bonferroni multiple comparison test (α=0.05). While dry-bonding of SBMP produced significantly lower bond strengths than wet-bonding (padhesives to demineralized air-dried dentin beyond conventional wet-bonding. Less porous resin-dentin interfaces with higher bond strengths on air-dried etched dentin were achieved; nonetheless, overall efficiency varied according to DMSO's co-solvent and adhesive type. DMSO pretreatments permit etched dentin to be air-dried before hybridization facilitating residual water removal and thus improving bonding effectiveness. This challenges the current paradigm of wet-bonding requirement for the etch-and-rinse approach creating new possibilities to enhance the clinical longevity of resin-dentin interfaces. Copyright © 2018 The Academy of Dental Materials. Published by Elsevier Inc. All rights reserved.

  9. Special equipment for etching nitrocellulose film

    International Nuclear Information System (INIS)

    Domanus, J.C.

    1983-08-01

    Nitrocellulose film and converter screens used for neutron radiography are described. Difficulties in visualization of radiographs on those films are mentioned. Because there is no equipment for etching nitrocellulose film available on the market Risoe has designed and produced such equipment at an estimated cost of Dkr. 15,000. Design criteria for this equipment are given and its performance described

  10. Technique for etching monolayer and multilayer materials

    Science.gov (United States)

    Bouet, Nathalie C. D.; Conley, Raymond P.; Divan, Ralu; Macrander, Albert

    2015-10-06

    A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi.sub.2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF.sub.3, Cl.sub.2, and O.sub.2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

  11. Current problems in chemical track etching

    International Nuclear Information System (INIS)

    Somogyi, G.

    1984-01-01

    A schematic survey is given on the current relevant problems of the etching (or revelation) of multi-track and single-track events in dielectric solids. Some aspects of the research trends and possible new applications of the effects observable here, are also considered. (author)

  12. More vertical etch profile using a Faraday cage in plasma etching

    Science.gov (United States)

    Cho, Byeong-Ok; Hwang, Sung-Wook; Ryu, Jung-Hyun; Moon, Sang Heup

    1999-05-01

    Scanning electron microscope images of sidewalls obtained by plasma etching of an SiO2 film with and without a Faraday cage have been compared. When the substrate film is etched in the Faraday cage, faceting is effectively suppressed and the etch profile becomes more vertical regardless of the process conditions. This is because the electric potential in the cage is nearly uniform and therefore distortion of the electric field at the convex corner of a microfeature is prevented. The most vertical etch profile is obtained when the cage is used in fluorocarbon plasmas, where faceting is further suppressed due to the decrease in the chemical sputtering yield and the increase in the radical/ion flux on the substrate.

  13. Shear Bond Strength of Saliva Contaminated and Re-etched All-in-One Adhesive to Enamel

    Directory of Open Access Journals (Sweden)

    M. Khoroushi

    2008-12-01

    Full Text Available Objective: The aim of this study was to investigate the effect of phosphoric acid re-etching of an enamel surface treated via a one-bottle adhesive system on shear bond strength between resin composite and the enamelsurface in different stages of adhesive application.Materials and Methods: Extracted intact premolars (n=84 were divided into sevengroups (n=12. In the control group 1, the adhesive i-Bond was used according to the manufacturer's instructions, with nocontamination. In groups 2 to 4, the conditioned and saliva, contaminated enamel was blot dried only, rinsed,and blot dried, rinsed blot dried and re-etched, respectively. In groups 5, 6and 7 cured adhesive was contaminated with saliva and then rinsed and blot-dried, blot dried only and rinsed, blot-dried and re-etched respectively. In groups 3, 4, 6 and 7 the adhesive was reapplied. Afterward, Z100 compos-ite cylinders were bonded to the enamel surfaces. The samples were thermocycled (5°C and 55°C, 30 s, dwelling time: 10 s, 500 cycles. Finally, the samples were sheared using Dartec testing machine and shear bond strength data were subjected to one-way ANOVA analysis and Tukey's HSD test.Results: There were statistically significant differences among groups 1 and 5-7. The samples in groups 1 and 4 demonstrated higher bond strengths than those in the other groups.Conclusion: Using phosphoric acid etching may be effective, only where contamination occurs prior to curing of the adhesive. After curing of the adhesive, none of the methods in this study would be preferred.

  14. Comparison of Self-Etch Primers with Conventional Acid Etching System on Orthodontic Brackets

    Science.gov (United States)

    Zope, Amit; Zope-Khalekar, Yogita; Chitko, Shrikant S.; Kerudi, Veerendra V.; Patil, Harshal Ashok; Jaltare, Pratik; Dolas, Siddhesh G

    2016-01-01

    Introduction The self-etching primer system consists of etchant and primer dispersed in a single unit. The etching and priming are merged as a single step leading to fewer stages in bonding procedure and reduction in the number of steps that also reduces the chance of introduction of error, resulting in saving time for the clinician. It also results in smaller extent of enamel decalcification. Aim To compare the Shear Bond Strength (SBS) of orthodontic bracket bonded with Self-Etch Primers (SEP) and conventional acid etching system and to study the surface appearance of teeth after debonding; etching with conventional acid etch and self-etch priming, using stereomicroscope. Materials and Methods Five Groups (n=20) were created randomly from a total of 100 extracted premolars. In a control Group A, etching of enamel was done with 37% phosphoric acid and bonding of stainless steel brackets with Transbond XT (3M Unitek, Monrovia, California). Enamel conditioning in left over four Groups was done with self-etching primers and adhesives as follows: Group B-Transbond Plus (3M Unitek), Group C Xeno V+ (Dentsply), Group D-G-Bond (GC), Group E-One-Coat (Coltene). The Adhesive Remnant Index (ARI) score was also evaluated. Additionally, the surface roughness using profilometer were observed. Results Mean SBS of Group A was 18.26±7.5MPa, Group B was 10.93±4.02MPa, Group C was 6.88±2.91MPa while of Group D was 7.78±4.13MPa and Group E was 10.39±5.22MPa respectively. In conventional group ARI scores shows that over half of the adhesive was remaining on the surface of tooth (score 1 to 3). In self-etching primer groups ARI scores show that there was no or minor amount of adhesive remaining on the surface of tooth (score 4 and 5). SEP produces a lesser surface roughness on the enamel than conventional etching. However, statistical analysis shows significant correlation (pbracket bonding after enamel conditioning with any of the SEPs tested. The SEPs used in Groups C (Xeno V

  15. Bulk and track etching of PET studied by spectrophotometer

    International Nuclear Information System (INIS)

    Zhu, Z.Y.; Duan, J.L.; Maekawa, Y.; Koshikawa, H.; Yoshida, M.

    2004-01-01

    UV-VIS spectra of poly(ethylene terephthalate) (PET) solutions formed by etching PET in NaOH solution were analyzed with respect to the etching time. A linear relationship between absorptions centered at 4.45 and 5.11 eV with weight loss of PET in NaOH solution was established. The relation was applied to study the influence of UV light illumination on bulk etching of PET and to evaluate pore size of etched-through tracks. It is found that bulk etching of PET can be greatly enhanced by UV illumination in air in the wavelength range around 313 nm. A surface area of about 350 nm in thickness shows a 23 times increase in bulk-etching rate after illuminated for 6 h. The phenomenon is attributed to the oxygen-assisted photo-degradation through generating of new photo-unstable species. The enhancement in bulk etching was immediately reduced as the etching proceeds below the surface with an exponential decay constant of about 1.5 μm -1 . Etching of Xe ion irradiated PET films gives extra etching products with similar chemical structure as revealed by spectrophotometer measurements. Quantitative analysis of etching products from latent tracks implies that pores of about 14.6 nm in radius are formed after etching in 0.74 N NaOH at 40 deg. C for 35 min, which is in agreement with the conductometric measurement

  16. Method of plastic track detector electrochemical etching

    International Nuclear Information System (INIS)

    D'yakov, A.A.

    1984-01-01

    The review of studies dealing with the development of the method for the electro-chemical etching (ECE) of the plastic track detectors on the base of polyethy-leneterephthalate (PET) and polycarbonate (PC) is given. Physical essence of the method, basic parameters of the processes, applied equipment and methods of measurement automation are considered. The advantages of the method over the traditional chemical etching are pointed out. Recommendations on the detector operation modes when detecting fission fragments, α-particles and fast neutrons are given. The ECE method is based on the condition that during chemical etching the high-voltage sound frequency alternating electric field is applied to the detector. In this case the detector serves as an isolating layer betWeen two vessels with etching solution in which high-voltage electrode are submerged. At a fixed electric field potential higher (over than the threshold value) at the end of the etching track cone atree-like discharge spot arises. It is shown that when PET is used for fast neutron detection it is advisable to apply for ECE the PEW solution (15g KOH+40 g C 2 H 2 OH + 45g H 2 O) the field potential should constitute 30 kVxcm -1 at the freqUency of 9 kHz. In the case of fission fragment detection Using ECE and PC the following ECE conditions are recommended: 30% KOH etcher, field potential of 10 kVxcm -1 , 2-4 kHz frequency. It is concluded that the ECE method permits considerably eXtend the sphere of plastic track detector application for detecting ionizing particles,

  17. Use of a Piezosurgery Technique to Remove a Deeply Impacted Supernumerary Tooth in the Anterior Maxilla

    Science.gov (United States)

    Sukegawa, Shintaro; Kanno, Takahiro; Kawakami, Kiyokazu; Shibata, Akane; Takahashi, Yuka; Furuki, Yoshihiko

    2015-01-01

    Deeply impacted supernumerary teeth in the anterior maxillary cannot be generally removed by the conventional labial or palatal surgical approach because of the risk of damaging the surrounding soft tissues and the possibility of injuring the roots of adjacent permanent teeth. In piezosurgery, bony tissues are selectively cut, thereby avoiding the soft tissue damage caused by rotary cutting instruments. We report the case of a 15-year-old Japanese boy from whom a deeply impacted supernumerary tooth in the anterior maxillary was safely removed through the floor of the nasal cavity. The surgical extraction was performed without damaging the nasal mucosa or adjacent structures such as the roots of the adjacent permanent teeth. Considering that piezosurgery limits the extent of surgical invasion, this technique can be practiced as a minimally invasive and safe surgical procedure for treating suitably selected cases with a deeply impacted supernumerary tooth. PMID:26779355

  18. Use of a Piezosurgery Technique to Remove a Deeply Impacted Supernumerary Tooth in the Anterior Maxilla

    Directory of Open Access Journals (Sweden)

    Shintaro Sukegawa

    2015-01-01

    Full Text Available Deeply impacted supernumerary teeth in the anterior maxillary cannot be generally removed by the conventional labial or palatal surgical approach because of the risk of damaging the surrounding soft tissues and the possibility of injuring the roots of adjacent permanent teeth. In piezosurgery, bony tissues are selectively cut, thereby avoiding the soft tissue damage caused by rotary cutting instruments. We report the case of a 15-year-old Japanese boy from whom a deeply impacted supernumerary tooth in the anterior maxillary was safely removed through the floor of the nasal cavity. The surgical extraction was performed without damaging the nasal mucosa or adjacent structures such as the roots of the adjacent permanent teeth. Considering that piezosurgery limits the extent of surgical invasion, this technique can be practiced as a minimally invasive and safe surgical procedure for treating suitably selected cases with a deeply impacted supernumerary tooth.

  19. Dry cell battery poisoning

    Science.gov (United States)

    Batteries - dry cell ... Acidic dry cell batteries contain: Manganese dioxide Ammonium chloride Alkaline dry cell batteries contain: Sodium hydroxide Potassium hydroxide Lithium dioxide dry cell batteries ...

  20. Four-year water degradation of a total-etch and two self-etching adhesives bonded to dentin

    NARCIS (Netherlands)

    Abdalla, A.I.; Feilzer, A.J.

    2008-01-01

    Objectives: To evaluate effect of direct and indirect water storage on the microtensile dentin bond strength of one total-etch and two self-etching adhesives. Methods: The adhesive materials were: one total-etch adhesive; ‘Admira Bond’ and two selfetch adhesives; ‘Clearfil SE Bond’ and ‘Hybrid

  1. Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching

    Directory of Open Access Journals (Sweden)

    P. Heydari

    2014-10-01

    Full Text Available In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE was carried out with silver catalyst. Provided solution (or materiel in combination with laser interference lithography (LIL fabricated different reproducible pillars, holes and rhomboidal structures. As a result, Submicron patterning of porous areas and nanohole arrays on Si substrate with a minimum feature size of 600nm was achieved. Measured reflection spectra of the samples present different optical characteristics which is dependent on the shape, thickness of metal catalyst and periodicity of the structure. These structures can be designed to reach a photonic bandgap in special range or antireflection layer in energy harvesting applications. The resulted reflection spectra of applied method are comparable to conventional expensive and complicated dry etching techniques.

  2. SU-8 etching in inductively coupled oxygen plasma

    DEFF Research Database (Denmark)

    Rasmussen, Kristian Hagsted; Keller, Stephan Sylvest; Jensen, Flemming

    2013-01-01

    Structuring or removal of the epoxy based, photo sensitive polymer SU-8 by inductively coupled plasma reactive ion etching (ICP-RIE) was investigated as a function of plasma chemistry, bias power, temperature, and pressure. In a pure oxygen plasma, surface accumulation of antimony from the photo......-initiator introduced severe roughness and reduced etch rate significantly. Addition of SF6 to the plasma chemistry reduced the antimony surface concentration with lower roughness and higher etch rate as an outcome. Furthermore the etch anisotropy could be tuned by controlling the bias power. Etch rates up to 800 nm...

  3. Influence of Etching Protocol and Silane Treatment with a Universal Adhesive on Lithium Disilicate Bond Strength.

    Science.gov (United States)

    Kalavacharla, V K; Lawson, N C; Ramp, L C; Burgess, J O

    2015-01-01

    To measure the effects of hydrofluoric acid (HF) etching and silane prior to the application of a universal adhesive on the bond strength between lithium disilicate and a resin. Sixty blocks of lithium disilicate (e.max CAD, Ivoclar Vivadent) were sectioned into coupons and polished. Specimens were divided into six groups (n=10) based on surface pretreatments, as follows: 1) no treatment (control); 2) 5% HF etch for 20 seconds (5HF); 3) 9.5% HF etch for 60 seconds (9.5HF); 4) silane with no HF (S); 5) 5% HF for 20 seconds + silane (5HFS); and 6) 9.5% HF for 60 seconds + silane (9.5HFS). All etching was followed by rinsing, and all silane was applied in one coat for 20 seconds and then dried. The universal adhesive (Scotchbond Universal, 3M ESPE) was applied onto the pretreated ceramic surface, air thinned, and light cured for 10 seconds. A 1.5-mm-diameter plastic tube filled with Z100 composite (3M ESPE) was applied over the bonded ceramic surface and light cured for 20 seconds on all four sides. The specimens were thermocycled for 10,000 cycles (5°C-50°C/15 s dwell time). Specimens were loaded until failure using a universal testing machine at a crosshead speed of 1 mm/min. The peak failure load was used to calculate the shear bond strength. Scanning electron microscopy images were taken of representative e.max specimens from each group. A two-way analysis of variance (ANOVA) determined that there were significant differences between HF etching, silane treatment, and the interaction between HF and silane treatment (puniversal adhesive.

  4. Comparative study of resist stabilization techniques for metal etch processing

    Science.gov (United States)

    Becker, Gerry; Ross, Matthew F.; Wong, Selmer S.; Minter, Jason P.; Marlowe, Trey; Livesay, William R.

    1999-06-01

    This study investigates resist stabilization techniques as they are applied to a metal etch application. The techniques that are compared are conventional deep-UV/thermal stabilization, or UV bake, and electron beam stabilization. The electron beam tool use din this study, an ElectronCure system from AlliedSignal Inc., ELectron Vision Group, utilizes a flood electron source and a non-thermal process. These stabilization techniques are compared with respect to a metal etch process. In this study, two types of resist are considered for stabilization and etch: a g/i-line resist, Shipley SPR-3012, and an advanced i-line, Shipley SPR 955- Cm. For each of these resist the effects of stabilization on resist features are evaluated by post-stabilization SEM analysis. Etch selectivity in all cases is evaluated by using a timed metal etch, and measuring resists remaining relative to total metal thickness etched. Etch selectivity is presented as a function of stabilization condition. Analyses of the effects of the type of stabilization on this method of selectivity measurement are also presented. SEM analysis was also performed on the features after a compete etch process, and is detailed as a function of stabilization condition. Post-etch cleaning is also an important factor impacted by pre-etch resist stabilization. Results of post- etch cleaning are presented for both stabilization methods. SEM inspection is also detailed for the metal features after resist removal processing.

  5. Influence factors on etching rate of PET nuclear pore membrane

    International Nuclear Information System (INIS)

    Zuo Zhenzhong; Wu Zhendong; Liang Haiying; Ju Wei; Chen Dongfeng; Fu Yuanyong; Qu Guopu

    2014-01-01

    Background: The nuclear pore membrane is a kind of liquid filtration material manufactured by irradiation and chemical etching. Various conditions in etch process have a great influence on etch rate. Purpose: The influence factors of concentration and temperature of etch solution and the irradiation energy of heavy ions on etch rate was studied. Methods: Four layers of PET (polyethylene terephthalate) films were stacked together and were irradiated with 140-MeV 32 S ions at room temperature under vacuum conditions. Utilizing conductivity measurement technique, the electrical current changes through the u:radiated PET film were monitored during etching, from which the breakthrough time and therefore the track etching rate was calculated. Results: The results show that there is an exponential correlation between etch rate and temperature, and a linear correlation between etch rate and concentration. The track etching rate increases linearly with energy loss rate. Empirical formula for the bulk etching rate as a function of etchant concentration and temperature was also established via fitting of measurements. Conclusion: It is concluded that by using 1.6-MeV·u -1 32 S ions, PET nuclear pore membrane with cylindrical pore shape can be prepared at 85℃ with etchant concentration of l mol·L -1 . (authors)

  6. Si etching with reactive neutral beams of very low energy

    Energy Technology Data Exchange (ETDEWEB)

    Hara, Yasuhiro [Organization for Research and Development of Innovative Science and Technology, Kansai University, 3-3-35 Yamate-chou, Suita, Osaka 565-0871 (Japan); Hamagaki, Manabu; Mise, Takaya [RIKEN, 2-1, Hirosawa, Wako, Saitama 351-0198 (Japan); Iwata, Naotaka; Hara, Tamio [Toyota Technological Institute, 2-12-1 Hisakata, Tenpaku-ku, Nagoya 468-8511 (Japan)

    2014-12-14

    A Si etching process has been investigated with reactive neutral beams (NBs) extracted using a low acceleration voltage of less than 100 V from CF{sub 4} and Ar mixed plasmas. The etched Si profile shows that the etching process is predominantly anisotropic. The reactive NB has a constant Si etching rate in the acceleration voltage range from 20 V to 80 V. It is considered that low-energy NBs can trigger Si etching because F radicals adsorb onto the Si surface and weaken Si–Si bonds. The etching rate per unit beam flux is 33 times higher than that with Ar NB. These results show that the low-energy reactive NB is useful for damage-free high speed Si etching.

  7. Effect of Phosphoric Acid Pre-etching on Fatigue Limits of Self-etching Adhesives.

    Science.gov (United States)

    Takamizawa, T; Barkmeier, W W; Tsujimoto, A; Scheidel, D D; Erickson, R L; Latta, M A; Miyazaki, M

    2015-01-01

    The purpose of this study was to use shear bond strength (SBS) and shear fatigue limit (SFL) testing to determine the effect of phosphoric acid pre-etching of enamel and dentin prior to application of self-etch adhesives for bonding resin composite to these substrates. Three self-etch adhesives--1) G- ænial Bond (GC Corporation, Tokyo, Japan); 2) OptiBond XTR (Kerr Corp, Orange, CA, USA); and 3) Scotchbond Universal (3M ESPE Dental Products, St Paul, MN, USA)--were used to bond Z100 Restorative resin composite to enamel and dentin surfaces. A stainless-steel metal ring with an inner diameter of 2.4 mm was used to bond the resin composite to flat-ground (4000 grit) tooth surfaces for determination of both SBS and SFL. Fifteen specimens each were used to determine initial SBS to human enamel/dentin, with and without pre-etching with a 35% phosphoric acid (Ultra-Etch, Ultradent Products Inc, South Jordan, UT, USA) for 15 seconds prior to the application of the adhesives. A staircase method of fatigue testing (25 specimens for each test) was then used to determine the SFL of resin composite bonded to enamel/dentin using a frequency of 10 Hz for 50,000 cycles or until failure occurred. A two-way analysis of variance and Tukey post hoc test were used for analysis of SBS data, and a modified t-test with Bonferroni correction was used for the SFL data. Scanning electron microscopy was used to examine the area of the bonded restorative/tooth interface. For all three adhesive systems, phosphoric acid pre-etching of enamel demonstrated significantly higher (padhesives clearly demonstrated different tendencies between enamel and dentin. The effect of using phosphoric acid, prior to the application of the self-etching adhesives, on SBS and SFL was dependent on the adhesive material and tooth substrate and should be carefully considered in clinical situations.

  8. Dry storage

    International Nuclear Information System (INIS)

    Arnott, Don.

    1985-01-01

    The environmental movement has consistently argued against disposal of nuclear waste. Reasons include its irretrievability in the event of leakage, the implication that reprocessing will continue and the legitimacy attached to an expanding nuclear programme. But there is an alternative. The author here sets out the background and a possible future direction of a campaign based on a call for dry storage. (author)

  9. Further development of thermal neutron capture therapy for metastatic and deeply-invasive human malignant melanoma

    International Nuclear Information System (INIS)

    Mishima, Yutaka

    1995-03-01

    This issue is the collection of the papers presented thermal neutron capture therapy for metastatic and deeply-invasive human malignant melanoma. Separate abstracts were prepared for 2 of the papers in this report. The remaining 32 papers were considered outside the subject scope of INIS. (J.P.N.)

  10. Designing a Deeply Digital Science Curriculum: Supporting Teacher Learning and Implementation with Organizing Technologies

    Science.gov (United States)

    Leary, Heather; Severance, Samuel; Penuel, William R.; Quigley, David; Sumner, Tamara; Devaul, Holly

    2016-01-01

    This paper examines the impacts of technology (e.g., Chromebooks, Google Drive) on teacher learning and student activity in the development and implementation of a deeply digital high school biology unit. Using design-based implementation research, teachers co-designed with researchers and curriculum specialists a student-centered unit aligned to…

  11. A versatile curve-fit model for linear to deeply concave rank abundance curves

    NARCIS (Netherlands)

    Neuteboom, J.H.; Struik, P.C.

    2005-01-01

    A new, flexible curve-fit model for linear to concave rank abundance curves was conceptualized and validated using observational data. The model links the geometric-series model and log-series model and can also fit deeply concave rank abundance curves. The model is based ¿ in an unconventional way

  12. Description of deeply inelastic collisions in terms of a transport equation

    International Nuclear Information System (INIS)

    Weidenmueller, H.A.

    1977-01-01

    A transport equation for deeply inelastic collisions is derived from a random-matrix model for the form factors for inelastic scattering and transfer reactions. The parametrization of these form factors is discussed. Results in one dimension indicate the importance of quantum fluctuations, and limitations of other approaches to the same problem. Results of three dimensions are compared with the data

  13. Effective medium approximation for deeply subwavelength all-dielectric multilayers: when does it break down?

    DEFF Research Database (Denmark)

    Lavrinenko, Andrei; Zhukovsky, Sergei; Andryieuski, Andrei

    2016-01-01

    with different layers ordering and different but still deeply subwavelength thicknesses. Such big reflectance difference values resulted from the special geometrical configuration with an additional resonator layer underneath the multilayers employed for the enhancement of the effect. Our results are important...

  14. Concurrent 5-fluorouracil and radiotherapy in radical treatment of frail patients with deeply invasive bladder cancer

    Energy Technology Data Exchange (ETDEWEB)

    Fellin, G.; Mussari, S.; Graffer, U.; Caffo, O.; Valduga, F.; Tomio, L.; Luciani, L. [S. Chiara Hospital, Trento (Italy)

    2004-11-01

    The radical treatment of deeply invasive bladder cancer with full dose radiotherapy and concomitant 5- fluorouracil continuous infusion is feasible even in frail patients, with an acceptable toxicity and a response rate comparable to that obtained using radiotherapy and simultaneous cisplatin. Many patients can retain a functioning bladder. (author)

  15. Wafer scale oblique angle plasma etching

    Science.gov (United States)

    Burckel, David Bruce; Jarecki, Jr., Robert L.; Finnegan, Patrick Sean

    2017-05-23

    Wafer scale oblique angle etching of a semiconductor substrate is performed in a conventional plasma etch chamber by using a fixture that supports a multiple number of separate Faraday cages. Each cage is formed to include an angled grid surface and is positioned such that it will be positioned over a separate one of the die locations on the wafer surface when the fixture is placed over the wafer. The presence of the Faraday cages influences the local electric field surrounding each wafer die, re-shaping the local field to be disposed in alignment with the angled grid surface. The re-shaped plasma causes the reactive ions to follow a linear trajectory through the plasma sheath and angled grid surface, ultimately impinging the wafer surface at an angle. The selected geometry of the Faraday cage angled grid surface thus determines the angle at with the reactive ions will impinge the wafer.

  16. Etching of glass microchips with supercritical water

    Czech Academy of Sciences Publication Activity Database

    Karásek, Pavel; Grym, Jakub; Roth, Michal; Planeta, Josef; Foret, František

    2015-01-01

    Roč. 15, č. 1 (2015), s. 311-318 ISSN 1473-0197 R&D Projects: GA ČR(CZ) GAP106/12/0522; GA ČR(CZ) GBP206/12/G014; GA MŠk(CZ) EE2.3.20.0182 Institutional support: RVO:68081715 Keywords : glass microchips * channel etching * supercritical water Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 5.586, year: 2015

  17. A study on etching of UO2, Co, and Mo surface with R.F. plasma using CF4 and O2

    International Nuclear Information System (INIS)

    Kim, Yong Soo; Seo, Yong Dae

    2003-01-01

    Recently dry decontamination/surface-cleaning technology using plasma etching has been focused in the nuclear industry. In this study, the applicability of this new dry processing technique are experimentally investigated by examining the etching reaction of UO 2 , Co, and Mo in r.f. plasma with the etchant gas of CF 4 /O 2 mixture. UO 2 is chosen as a representing material for uranium and TRU (TRans-Uranic) compounds while metallic Co and Mo are selected because they are the principal contaminants in the used metallic nuclear components such as valves and pipes made of stainless steel or Inconel. Results show that in all cases maximum etching rate is achieved when the mole fraction of O 2 in CF 4 /O 2 mixture gas is 20%, regardless of temperature and r.f. power. In case of UO 2 , the highest etching reaction rate is greater than 1000 monolayers/min. at 370 .deg. C under 150 W r.f. power which is equivalent to 0.4 μm/min. As for Co, etching reaction begins to take place significantly when the temperature exceeds 350 .deg. C. Maximum etching rate achieved at 380 .deg. C is 0.06 μm/min. Mo etching reaction takes place vigorously even at relatively low temperature and the reaction rate increases drastically with increasing temperature. Highest etching rate at 380 .deg. C is 1.9 μm /min. According to OES (Optical Emission Spectroscopy) and AES (Auger Electron Spectroscopy) analysis, primary reaction seems to be a fluorination reaction, but carbonyl compound formation reaction may assist the dominant reaction, especially in case of Co and Mo. Through this basic study, the feasibility and the applicability of plasma decontamination technique are demonstrated

  18. GaN MOSFET with Boron Trichloride-Based Dry Recess Process

    International Nuclear Information System (INIS)

    Jiang, Y; Wang, Q P; Tamai, K; Ao, J P; Ohno, Y; Miyashita, T; Motoyama, S; Wang, D J

    2013-01-01

    The dry recessed-gate GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) on AlGaN/GaN heterostructure using boron trichloride (BCl 3 ) as etching gas were fabricated and characterized. Etching with different etching power was conducted. Devices with silicon tetrachloride (SiCl 4 ) etching gas were also prepared for comparison. Field-effect mobility and interface state density were extracted from current-voltage (I-V) characteristics. GaN MOSFETs on AlGaN/GaN heterostructure with BCl 3 based dry recess achieved a high maximum electron mobility of 141.5 cm 2 V −1 s −1 and a low interface state density.

  19. Predicting synergy in atomic layer etching

    Energy Technology Data Exchange (ETDEWEB)

    Kanarik, Keren J. [Lam Research Corp., Fremont, CA (United States); Tan, Samantha [Lam Research Corp., Fremont, CA (United States); Yang, Wenbing [Lam Research Corp., Fremont, CA (United States); Kim, Taeseung [Lam Research Corp., Fremont, CA (United States); Lill, Thorsten [Lam Research Corp., Fremont, CA (United States); Kabansky, Alexander [Lam Research Corp., Fremont, CA (United States); Hudson, Eric A. [Lam Research Corp., Fremont, CA (United States); Ohba, Tomihito [Lam Research Corp., Fremont, CA (United States); Nojiri, Kazuo [Lam Research Corp., Fremont, CA (United States); Yu, Jengyi [Lam Research Corp., Fremont, CA (United States); Wise, Rich [Lam Research Corp., Fremont, CA (United States); Berry, Ivan L. [Lam Research Corp., Fremont, CA (United States); Pan, Yang [Lam Research Corp., Fremont, CA (United States); Marks, Jeffrey [Lam Research Corp., Fremont, CA (United States); Gottscho, Richard A. [Lam Research Corp., Fremont, CA (United States)

    2017-03-27

    Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on ALE of Si, Ge, C, W, GaN, and SiO2 using a directional (anisotropic) plasma-enhanced approach. The authors analyze these systems by defining an “ALE synergy” parameter which quantifies the degree to which a process approaches the ideal ALE regime. This parameter is inspired by the ion-neutral synergy concept introduced in the 1979 paper by Coburn and Winters. ALE synergy is related to the energetics of underlying surface interactions and is understood in terms of energy criteria for the energy barriers involved in the reactions. Synergistic behavior is observed for all of the systems studied, with each exhibiting behavior unique to the reactant–material combination. By systematically studying atomic layer etching of a group of materials, the authors show that ALE synergy scales with the surface binding energy of the bulk material. This insight explains why some materials are more or less amenable to the directional ALE approach. Furthermore, they conclude that ALE is both simpler to understand than conventional plasma etch processing and is applicable to metals, semiconductors, and dielectrics.

  20. Laser etching of polymer masked leadframes

    Science.gov (United States)

    Ho, C. K.; Man, H. C.; Yue, T. M.; Yuen, C. W.

    1997-02-01

    A typical electroplating production line for the deposition of silver pattern on copper leadframes in the semiconductor industry involves twenty to twenty five steps of cleaning, pickling, plating, stripping etc. This complex production process occupies large floor space and has also a number of problems such as difficulty in the production of rubber masks and alignment, generation of toxic fumes, high cost of water consumption and sometimes uncertainty on the cleanliness of the surfaces to be plated. A novel laser patterning process is proposed in this paper which can replace many steps in the existing electroplating line. The proposed process involves the application of high speed laser etching techniques on leadframes which were protected with polymer coating. The desired pattern for silver electroplating is produced by laser ablation of the polymer coating. Excimer laser was found to be most effective for this process as it can expose a pattern of clean copper substrate which can be silver plated successfully. Previous working of Nd:YAG laser ablation showed that 1.06 μm radiation was not suitable for this etching process because a thin organic and transparent film remained on the laser etched region. The effect of excimer pulse frequency and energy density upon the removal rate of the polymer coating was studied.

  1. Shapes of agglomerates in plasma etching reactors

    International Nuclear Information System (INIS)

    Huang, F.Y.; Kushner, M.J.

    1997-01-01

    Dust particle contamination of wafers in reactive ion etching (RIE) plasma tools is a continuing concern in the microelectronics industry. It is common to find that particles collected on surfaces or downstream of the etch chamber are agglomerates of smaller monodisperse spherical particles. The shapes of the agglomerates vary from compact, high fractal dimension structures to filamentary, low fractal dimension structures. These shapes are important with respect to the transport of particles in RIE tools under the influence electrostatic and ion drag forces, and the possible generation of polarization forces. A molecular dynamics simulation has been developed to investigate the shapes of agglomerates in plasma etching reactors. We find that filamentary, low fractal dimension structures are generally produced by smaller (<100s nm) particles in low powered plasmas where the kinetic energy of primary particles is insufficient to overcome the larger Coulomb repulsion of a compact agglomerate. This is analogous to the diffusive regime in neutral agglomeration. Large particles in high powered plasmas generally produce compact agglomerates of high fractal dimension, analogous to ballistic agglomeration of neutrals. copyright 1997 American Institute of Physics

  2. Determination of etching parameters for pulsed XeF2 etching of silicon using chamber pressure data

    Science.gov (United States)

    Sarkar, Dipta; Baboly, M. G.; Elahi, M. M.; Abbas, K.; Butner, J.; Piñon, D.; Ward, T. L.; Hieber, Tyler; Schuberth, Austin; Leseman, Z. C.

    2018-04-01

    A technique is presented for determination of the depletion of the etchant, etched depth, and instantaneous etch rate for Si etching with XeF2 in a pulsed etching system in real time. The only experimental data required is the pressure data collected temporally. Coupling the pressure data with the knowledge of the chemical reactions allows for the determination of the etching parameters of interest. Using this technique, it is revealed that pulsed etching processes are nonlinear, with the initial etch rate being the highest and monotonically decreasing as the etchant is depleted. With the pulsed etching system introduced in this paper, the highest instantaneous etch rate of silicon was recorded to be 19.5 µm min-1 for an initial pressure of 1.2 Torr for XeF2. Additionally, the same data is used to determine the rate constant for the reaction of XeF2 with Si; the reaction is determined to be second order in nature. The effect of varying the exposed surface area of Si as well as the effect that pressure has on the instantaneous etch rate as a function of time is shown applying the same technique. As a proof of concept, an AlN resonator is released using XeF2 pulses to remove a sacrificial poly-Si layer.

  3. In vitro bonding effectiveness of three different one-step self-etch adhesives with additional enamel etching.

    Science.gov (United States)

    Batra, Charu; Nagpal, Rajni; Tyagi, Shashi Prabha; Singh, Udai Pratap; Manuja, Naveen

    2014-08-01

    To evaluate the effect of additional enamel etching on the shear bond strength of three self-etch adhesives. Class II box type cavities were made on extracted human molars. Teeth were randomly divided into one control group of etch and rinse adhesive and three test groups of self-etch adhesives (Clearfil S3 Bond, Futurabond NR, Xeno V). The teeth in the control group (n = 10) were treated with Adper™ Single Bond 2. The three test groups were further divided into two subgroups (n = 10): (i) self-etch adhesive was applied as per the manufacturer's instructions; (ii) additional etching of enamel surfaces was done prior to the application of self-etch adhesives. All cavities were restored with Filtek Z250. After thermocycling, shear bond strength was evaluated using a Universal testing machine. Data were analyzed using anova independent sample's 't' test and Dunnett's test. The failure modes were evaluated with a stereomicroscope at a magnification of 10×. Additional phosphoric acid etching of the enamel surface prior to the application of the adhesive system significantly increased the shear bond strength of all the examined self-etch adhesives. Additional phosphoric acid etching of enamel surface significantly improved the shear bond strength. © 2013 Wiley Publishing Asia Pty Ltd.

  4. Methods of removal of defects arising at liquid etching of polycrystalline silicon

    Directory of Open Access Journals (Sweden)

    Ivanchykou A. E.

    2008-02-01

    Full Text Available The paper presents a model of generation of defects having the form of spots on the surface of the polycrystalline silicon during processing of semiconductor wafers with hydrofluoric acid based etchant, and a model of removal of such defects in chemical solutions. The authors investigate how the centrifuge speed during drying and the relief of structures, produced on the plate, effect the number of defects. It is shown that there is a possibility to remove defects by chemical treatment in the peroxide-ammonia solutions (PAS and also by sequence of chemical cleaning in Karo mixture, SiO2 etching and treatment in PAS.

  5. Comparative evaluation of self-etching primers and phosphoric acid effectiveness on composite to enamel bond: an in vitro study.

    Science.gov (United States)

    Patil, Basanagouda S; Rao, Bk Raghavendra; Sharathchandra, Sm; Hegde, Reshma; Kumar, G Vinay

    2013-09-01

    The aim of the present study was to investigate the effectiveness of the one total-etch self-priming adhesive, one two-step self-etching primer adhesive, and one 'all-in-one' self-etching adhesive system on the adhesion of a resin composite to enamel. Thirty-six freshly extracted human mandibular molars were selected for this study. A fat area about 5 mm in diameter was created on the exposed mesial surface of enamel of each tooth by moist grinding with 320, 420 and 600 grit silicon carbide paper. Twelve teeth were randomly assigned into three groups. In group 1, Adper Easy One (3M ESPE), a one step self-etching primer adhesive was applied and light curing unit for 10 seconds. In group 2, Adper SE Plus, a two-step self-etching primer with bottle A containing the aqueous primer and bottle B containing the acidic adhesive was applied and light cured for 10 seconds. Group 3 (control)-etchant 37% phosphoric acid is applied to the surface for 15 seconds and rinsed with water and air dried and adhesive (single bond 2) is applied to the surface and tube is placed and light cured for 20 seconds. Composite material (Z350) was placed in the tube and light cured for 40 seconds in all the groups. Bond strength testing was done using universal testing machine at the enamel-composite interface. The debonded enamel surface was evaluated in stereomicroscope to assess the cohesive, adhesive or mixed fracture. Data was statistically analyzed by one way analysis of variance (ANOVA). Group 1 performed least among all groups with a mean score of 19.46 MPa. Group 2 had a mean score of 25.67 MPa. Group 3 had a mean score of 27.16 MPa. Under the conditions of this in vitro study, the bond strength values of the two-step self-etching primer systems tested were similar to the total-etch. And, one step self-etching primers have lower bond strength compared to the total-etch.

  6. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Kamal P. [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Mahyavanshi, Rakesh D. [Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

    2017-01-30

    Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

  7. Study on the etched carnelian beads unearthed in China

    Institute of Scientific and Technical Information of China (English)

    Deyun Zhao

    2014-01-01

    Etched carnelian beads originated in the Indus Civilization;this kind of ornaments and its manufacturing techniques were spread to the whole Eurasia Continent.The etched carnelian beads unearthed in China can be classified into four types,the comparisons of which to their foreign counterparts may reveal their different sources and diffusion routes.The etched carnelian beads and their glass imitations unearthed in China had influences to the making of the glass "eye beads" in

  8. Influence of copper foil polycrystalline structure on graphene anisotropic etching

    International Nuclear Information System (INIS)

    Sharma, Kamal P.; Mahyavanshi, Rakesh D.; Kalita, Golap; Tanemura, Masaki

    2017-01-01

    Graphical abstract: Hexagonal hole formation with anisotropic etching independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. - Highlights: • Reveal the influence of copper polycrystalline structure on anisotropic etching of graphene. • Hexagonal hole formation with etching is observed to be independent of stripes and wrinkles in graphene. • Variation in etched pattern of graphene depending on the base Cu grain is confirmed. • This finding will help to understand the nature of microscopic etched pattern in graphene. - Abstract: Anisotropic etching of graphene and other two dimensional materials is an important tool to understand the growth process as well as enabling fabrication of various well-defined structures. Here, we reveal the influence of copper foil polycrystalline structure on anisotropic etching process of as-synthesized graphene. Graphene crystals were synthesized on the polycrystalline Cu foil by a low-pressure chemical vapor deposition (LPCVD) system. Microscopic analysis shows difference in shape, size and stripes alignment of graphene crystals with dissimilar nucleation within closure vicinity of neighboring Cu grains. Post-growth etching of such graphene crystals also significantly affected by the crystallographic nature of Cu grains as observed by the field emission scanning electron microscope (FE-SEM) and electron back scattered diffraction (EBSD) analysis. Hexagonal hole formation with anisotropic etching is observed to be independent of the stripes and wrinkles in the synthesized graphene. We also observed variation in etched pattern of the graphene depending on the base Cu grain orientations, attributing to difference in nucleation and growth process. The findings can facilitate to understand the nature of microscopic etched pattern depending on metal

  9. Optimize Etching Based Single Mode Fiber Optic Temperature Sensor

    OpenAIRE

    Ajay Kumar; Dr. Pramod Kumar

    2014-01-01

    This paper presents a description of etching process for fabrication single mode optical fiber sensors. The process of fabrication demonstrates an optimized etching based method to fabricate single mode fiber (SMF) optic sensors in specified constant time and temperature. We propose a single mode optical fiber based temperature sensor, where the temperature sensing region is obtained by etching its cladding diameter over small length to a critical value. It is observed that th...

  10. Evaluation of different polymers for fast neutron personnel dosimetry using electrochemical etching

    International Nuclear Information System (INIS)

    Gammage, R.B.; Cotter, S.J.

    1977-01-01

    There is considerable optimism for the enhancement by electrochemical etching of fast neutron-induced recoil tracks in polycarbonate for the purpose of personnel dosimetry. The threshold energy, however, is rather high. A desirable improvement would be to lower this energy below 1 MeV. With this objective in mind, we have commenced an investigation of cellulose acetate, triacetate, and acetobutyrate in addition to polycarbonate. These cellulose derivatives are chemically more reactive and physically weaker than polycarbonate. It might, therefore, be possible to initiate the electrochemical amplification at the sites of shorter recoil atom damage tracks than is possible with polycarbonate. Some characteristics important for electrochemically etching in aqueous electrolytes are listed. Chemical etching is combined with treeing, an electrical breakdown process that starts when the dielectric strength is exceeded. These mechanical and electrical properties pertain to the dry plastics. The absorption of water molecules and electrolyte ions will cause these values to be reduced. Results and conclusions of the study are presented

  11. Gamma-ray multiplicity moments from deeply inelastic collisions of 86Kr and 144Sm

    International Nuclear Information System (INIS)

    Christensen, P.R.; Folkmann, F.; Hansen, O.; Nathan, O.; Trautner, N.; Videlbaek, F.; Werf, S.Y.v.d.; Britt, H.C.; Chestnut, R.P.; Freiesleben, H.; Puehlhofer, F.

    1978-01-01

    First, second, and third moments of gamma-ray multiplicity distributions from deeply inelastic collisions have been measured for the system 8 6Kr on 1 44Sm at 490-MeV Kr energy. The average gamma-ray multiplicities are approx. = 21, independent of reaction angle and fragment charge. The multiplicity distributions are broad, with standard deviations of ν approx. = 10, and they have a negative skewness

  12. Containerless Heating Process of a Deeply Undercooled Metal Droplet by Electrostatic Levitation

    International Nuclear Information System (INIS)

    Wang Fei-Long; Dai Bin; Liu Xue-Feng; Sun Yi-Ning; Sun Zhi-Bin; Yu Qiang; Zhai Guang-Jie

    2015-01-01

    We present the containerless heating process of a deeply undercooled metal droplet by electrostatic levitation. The problem of surface charge loss in the heating process is discussed and specific formulas are given to describe the basic process of charge supplement by the photoelectric and thermoelectric effects. The pure metal zirconium is used to be melted and solidified to analyze the heating process. The temperature-time curve clearly shows the features including melting, undercooling, recalescence and solid-state phase transformation. (paper)

  13. A Glimpse of Gluons through Deeply Virtual Compton Scattering on the Proton

    OpenAIRE

    Defurne, M.; Jiménez-Argüello, A. Martì; Ahmed, Z.; Albataineh, H.; Allada, K.; Aniol, K. A.; Bellini, V.; Benali, M.; Boeglin, W.; Bertin, P.; Brossard, M.; Camsonne, A.; Canan, M.; Chandavar, S.; Chen, C.

    2017-01-01

    The proton is composed of quarks and gluons, bound by the most elusive mechanism of strong interaction called confinement. In this work, the dynamics of quarks and gluons are investigated using deeply virtual Compton scattering (DVCS): produced by a multi-GeV electron, a highly virtual photon scatters off the proton which subsequently radiates a high energy photon. Similarly to holography, measuring not only the magnitude but also the phase of the DVCS amplitude allows to perform 3D images of...

  14. Effects of etching time on enamel bond strengths.

    Science.gov (United States)

    Triolo, P T; Swift, E J; Mudgil, A; Levine, A

    1993-12-01

    This study evaluated the effects of etching time on bond strengths of composite to enamel. Proximal surfaces of extracted molars were etched with either a conventional etchant (35% phosphoric acid) or one of two dentin/enamel conditioners, 10% maleic acid (Scotchbond Multi-Purpose Etchant), or a solution of oxalic acid, aluminum nitrate, and glycine (Gluma 1 & 2 Conditioner). Each agent was applied for 15, 30, or 60 seconds. Specimens etched with 35% phosphoric acid had the highest mean bond strengths at each etching time. At the manufacturer's recommended application times, the other two agents gave significantly lower shear bond strengths than phosphoric acid.

  15. Optimization of some electrochemical etching parameters for cellulose derivatives

    International Nuclear Information System (INIS)

    Chowdhury, Annis; Gammage, R.B.

    1978-01-01

    Electrochemical etching of fast neutron induced recoil particle tracks in cellulose derivatives and other polymers provides an inexpensive and sensitive means of fast neutron personnel dosimetry. A study of the shape, clarity, and size of the tracks in Transilwrap polycarbonate indicated that the optimum normality of the potassium hydroxide etching solution is 9 N. Optimizations have also been attempted for cellulose nitrate, triacetate, and acetobutyrate with respect to such electrochemical etching parameters as frequency, voltage gradient, and concentration of the etching solution. The measurement of differential leakage currents between the undamaged and the neutron damaged foils aided in the selection of optimum frequencies. (author)

  16. 3D memory: etch is the new litho

    Science.gov (United States)

    Petti, Christopher

    2018-03-01

    This paper discusses the process challenges and limitations for 3D NAND processes, focusing on vertical 3D architectures. The effect of deep memory hole etches on die cost is calculated, with die cost showing a minimum at a given number of layers because of aspect-ratio dependent etch effects. Techniques to mitigate these etch effects are summarized, as are other etch issues, such as bowing and twisting. Metal replacement gate processes and their challenges are also described. Lastly, future directions of vertical 3D NAND technologies are explored.

  17. Preparation of Track Etch Membrane Filters Using Polystyrene Film

    International Nuclear Information System (INIS)

    Kaewsaenee, Jerawut; Ratanatongchai, Wichian; Supaphol, Pitt; Visal-athaphand, Pinpan

    2007-08-01

    Full text: Polystyrene nuclear track etch membrane filters was prepared by exposed 13 .m thin film polystyrene with fission fragment. Nuclear latent track was enlarged to through hole on the film by etching with 80 o C 40% H 2 SO 4 with K 2 Cr 2 O 7 solution for 6-10 hour. The hole size was depend on concentration of etching solution and etching time with 1.3-3.4 .m hole diameter. The flow rate test of water was 0.79-1.56 mm cm-2 min-1 at 109.8-113.7 kPa pressure

  18. Ion-beam etching of ramps in thin film heterostructures

    International Nuclear Information System (INIS)

    Mozhaev, P. B.; Mozhaeva, Ju. E.; Komissinskii, P. V.

    2002-01-01

    Ion-beam patterning of thin films and heterostructures is one of the most common processes of fabrication of thin film devices and structures. 'Directed' nature of ion-beam etching provides a possibility to form certain profiles on the films surface, like shallow ramps, when etching is performed at some inclination angle. A simple geometrical model is presented, describing the formation of a ramp as a shadow of the mask on the film surface. Good agreement with the experiment can be obtained if the mask etching is taken into account. The etching at the opposite direction ('high-angle etching') also can be satisfactory described by the model. The profile of the slope - positive or negative curvature, pits near the end of the ramp - is discussed as a function of the etch rate dependence on the incidence angle. Such etch rate dependences for some often used materials were measured. An area of instability of the resulting ramp shape is found for the 'high-angle etching'. The model is compared with the experimental data reported by other groups. Finally ion-beam etching of a rotating sample at non-normal incidence is discussed, the results are compared with experimental data. (Authors)

  19. Chemical etching of fission tracks in ethylene-tetrafluoroethylene copolymer

    International Nuclear Information System (INIS)

    Komaki, Y.; Tsujimura, S.; Seguchi, T.

    1979-01-01

    The chemical etching of fission tracks in ethylene-tetrafluoroethylene copolymer was studied. Etched holes 3000 to 4000 A in diameter were recognized by electron microscopy for a film bombarded by fission fragments in oxygen and etched in a 12N sodium hydroxide solution at 125 0 C. The radial etching rate at 125 0 C was 6 to 8 A/hr, which is less than 17 A/hr for polyvinylidene fluoride in the same sodium hydroxide concentration at 85 0 C. The smaller rate is a reflection of the larger chemical resistivity of ethylene-tetrafluoroethylene copolymer than polyvinylidene fluoride. (author)

  20. Influence of asymmetric etching on ion track shapes in polycarbonate

    International Nuclear Information System (INIS)

    Clochard, M.-C.; Wade, T.L.; Wegrowe, J.-E.; Balanzat, E.

    2007-01-01

    By combining low-energy ion irradiation with asymmetric etching, conical nanopores of controlled geometry can be etched in polycarbonate (PC). Cone bases vary from 0.5 to 1 μm. Top diameters down to 17 nm are reached. When etching from one side, the pH on the other side (bathed in neutral or acidic buffer) was monitored. Etching temperature ranged from 65 deg. C to 80 deg. C. Pore shape characterization was achieved by electro replication combined with SEM observation. The tip shape depended on whether an acidic buffer was used or not on the stopped side

  1. Modeling of the angular dependence of plasma etching

    International Nuclear Information System (INIS)

    Guo Wei; Sawin, Herbert H.

    2009-01-01

    An understanding of the angular dependence of etching yield is essential to investigate the origins of sidewall roughness during plasma etching. In this article the angular dependence of polysilicon etching in Cl 2 plasma was modeled as a combination of individual angular-dependent etching yields for ion-initiated processes including physical sputtering, ion-induced etching, vacancy generation, and removal. The modeled etching yield exhibited a maximum at ∼60 degree sign off-normal ion angle at low flux ratio, indicative of physical sputtering. It transformed to the angular dependence of ion-induced etching with the increase in the neutral-to-ion flux ratio. Good agreement between the modeling and the experiments was achieved for various flux ratios and ion energies. The variation of etching yield in response to the ion angle was incorporated in the three-dimensional profile simulation and qualitative agreement was obtained. The surface composition was calculated and compared to x-ray photoelectron spectroscopy (XPS) analysis. The modeling indicated a Cl areal density of 3x10 15 atoms/cm 2 on the surface that is close to the value determined by the XPS analysis. The response of Cl fraction to ion energy and flux ratio was modeled and correlated with the etching yields. The complete mixing-layer kinetics model with the angular dependence effect will be used for quantitative surface roughening analysis using a profile simulator in future work.

  2. Symphony and cacophony in ion track etching: how to control etching results

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Kiv, A.; Cruz, S. A.; Munoz, G. H.; Vacík, Jiří

    2012-01-01

    Roč. 167, č. 7 (2012), s. 527-540 ISSN 1042-0150 R&D Projects: GA AV ČR IAA200480702 Institutional support: RVO:61389005 Keywords : ion track s * polymers * etching * diodes * resistances Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 0.502, year: 2012

  3. In vitro evaluation of microleakage around orthodontic brackets using laser etching and Acid etching methods.

    Directory of Open Access Journals (Sweden)

    Mohammad Hossein Toodehzaeim

    2014-06-01

    Full Text Available path of microleakage between the enamel and adhesive potentially allows microbial ingress that may consequently cause enamel decalcification. The aim of this study was to compare microleakage of brackets bonded either by laser or acid etching techniques.The specimens were 33 extracted premolars that were divided into three groups as the acid etching group (group 1, laser etching with Er:YAG at 100 mJ and 15 Hz for 15s (group 2, and laser etching with Er:YAG at 140 mJ and 15 Hz for 15s (group 3. After photo polymerization, the teeth were subjected to 500 thermal cycles. Then the specimens were sealed with nail varnish, stained with 2% methylen blue for 24hs, sectioned, and examined under a stereomicroscope. They were scored for marginal microleakage that occurred between the adhesive-enamel and bracket-adhesive interfaces from the occlusal and gingival margins. Data were analyzed with the Kruskal- Wallis test.For the adhesive-enamel and bracket-adhesive surfaces, significant differences were not observed between the three groups.According to this study, the Er:YAG laser with 1.5 and 2.1 watt settings may be used as an adjunctive for preparing the surface for orthodontic bracket bonding.

  4. High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF{sub 4}/Ar plasma

    Energy Technology Data Exchange (ETDEWEB)

    Joo, Young-Hee; Kim, Chang-Il

    2015-05-29

    We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF{sub 4}/Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700 W, a DC-bias voltage of − 150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF{sub 4}/Ar(= 25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF{sub 4}/Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. - Highlights: • IGZO thin film was etched by CF{sub 4}/Ar plasma as a function of gas mixing ratio. • IGZO bonds were broken Ar{sup +} sputtering and then reacted with the C-F{sub x} radicals. • The physical sputtering is dominant in etch control compared with chemical etching.

  5. Radiation resistance of track etched membranes

    International Nuclear Information System (INIS)

    Buczkowski, M.; Sartowska, B.; Wawszczak, D.; Starosta, W.

    2001-01-01

    Track etched membranes (TEMs) obtained by irradiation of polymer films with heavy ions and subsequent etching of latent tracks can be applied in many fields and among others in biomedicine as well. It is important to know radiation resistance of TEMs because of wide use of radiation sterilization in the case of biomedical devices. Tensile properties of TEMs made of PET and PC films with the thickness of 10 μm after electron irradiation at different doses are known from literature. Nowadays TEMs are being manufactured from thicker (20 μm) PET and PC films as well as polyethylene naphthalate (PEN) films are proposed for TEMs. It seems to be important to get data about radiation resistance of new kinds of TEMs. Samples of polymer films made of PET and PEN with the thickness of 19-25 μm and TEMs made of such materials have been irradiated using 10 MeV electron beam with doses up to 990 kGy. Tensile properties and SEM photographs of the samples after irradiation are given in the paper

  6. What Is Dry Eye?

    Medline Plus

    Full Text Available ... Stories Español Eye Health / Eye Health A-Z Dry Eye Sections What Is Dry Eye? Dry Eye Symptoms ... of Dry Eye Dry Eye Treatment What Is Dry Eye? Leer en Español: ¿Qué es el ojo seco? ...

  7. What Is Dry Eye?

    Medline Plus

    Full Text Available ... Español Eye Health / Eye Health A-Z Dry Eye Sections What Is Dry Eye? Dry Eye Symptoms ... Dry Eye Dry Eye Treatment What Is Dry Eye? Leer en Español: ¿Qué es el ojo seco? ...

  8. Selective laser etching or ablation for fabrication of devices

    KAUST Repository

    Buttner, Ulrich; Salama, Khaled N.; Sapsanis, Christos

    2017-01-01

    Methods of fabricating devices vial selective laser etching are provided. The methods can include selective laser etching of a portion of a metal layer, e.g. using a laser light source having a wavelength of 1,000 nm to 1,500 nm. The methods can

  9. Particle precipitation in connection with KOH etching of silicon

    DEFF Research Database (Denmark)

    Nielsen, Christian Bergenstof; Christensen, Carsten; Pedersen, Casper

    2004-01-01

    This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show that the precipi......This paper considers the precipitation of iron oxide particles in connection with the KOH etching of cavities in silicon wafers. The findings presented in this paper suggest that the source to the particles is the KOH pellets used for making the etching solution. Experiments show...... that the precipitation is independent of KOH etching time, but that the amount of deposited material varies with dopant type and dopant concentration. The experiments also suggest that the precipitation occurs when the silicon wafers are removed from the KOH etching solution and not during the etching procedure. When...... not removed, the iron oxide particles cause etch pits on the Si surface when later processed and exposed to phosphoric acid. It has been found that the particles can be removed in an HCl solution, but not completely in an H2SO4- H2O2 solution. The paper discusses the involved precipitation mechanism in terms...

  10. Micropatterning on cylindrical surfaces via electrochemical etching using laser masking

    International Nuclear Information System (INIS)

    Cho, Chull Hee; Shin, Hong Shik; Chu, Chong Nam

    2014-01-01

    Highlights: • Various micropatterns were fabricated on the cylindrical surface of a stainless steel shaft. • Selective electrochemical dissolution was achieved via a series process of laser masking and electrochemical etching. • Laser masking characteristics on the non-planar surface were investigated. • A uniform mask layer was formed on the cylindrical surface via synchronized laser line scanning with a rotary system. • The characteristics of electrochemical etching on the non-planar surface were investigated. - Abstract: This paper proposes a method of selective electrochemical dissolution on the cylindrical surfaces of stainless steel shafts. Selective electrochemical dissolution was achieved via electrochemical etching using laser masking. A micropatterned recast layer was formed on the surface via ytterbium-doped pulsed fiber laser irradiation. The micropatterned recast layer could be used as a mask layer during the electrochemical etching process. Laser masking condition to form adequate mask layer on the planar surface for etching cannot be used directly on the non-planar surface. Laser masking condition changes depending on the morphological surface. The laser masking characteristics were investigated in order to form a uniform mask layer on the cylindrical surface. To minimize factors causing non-uniformity in the mask layer on the cylindrical surface, synchronized laser line scanning with a rotary system was applied during the laser masking process. Electrochemical etching characteristics were also investigated to achieve deeper etched depth, without collapsing the recast layer. Consequently, through a series process of laser masking and electrochemical etching, various micropatternings were successfully performed on the cylindrical surfaces

  11. Simulation of convection-driven wet-chemical etching

    NARCIS (Netherlands)

    Driesen, C.H.

    1999-01-01

    In a wet-chemical etching process, the resulting etched shape is smaller than the originally designed shape at the mask. This is caused by the fact that, as soon as material next to the mask is dissolved, material under the mask will be dissolved too. This is the so-called undercut effect. During an

  12. Simulation of convection-driven wet-chemical etching

    NARCIS (Netherlands)

    Driesen, C.H.

    1999-01-01

    a wet-chemical etching process, the resulting etched shape is smaller than the originally designed shape at the mask. This is caused by the fact that, as soon as material next to the mask is dissolved, material under the mask will be dissolved too. This is the so-called undercut effect. During an

  13. Physical chemistry of wet chemical anisotropic etching of silicon

    NARCIS (Netherlands)

    Elwenspoek, Michael Curt

    1995-01-01

    In this paper we explain a view to understand the anisotropy of the etching of silicon in certain wet chemical agents (such as KOH). The starting point is the assumption that the [Left angle bracket]111[Right Angle Bracket] face of silicon is a flat face, the etch rate of which is then governed by a

  14. Longevity of Self-etch Dentin Bonding Adhesives Compared to Etch-and-rinse Dentin Bonding Adhesives: A Systematic Review.

    Science.gov (United States)

    Masarwa, Nader; Mohamed, Ahmed; Abou-Rabii, Iyad; Abu Zaghlan, Rawan; Steier, Liviu

    2016-06-01

    A systematic review and meta-analysis were performed to compare longevity of Self-Etch Dentin Bonding Adhesives to Etch-and-Rinse Dentin Bonding Adhesives. The following databases were searched for PubMed, MEDLINE, Web of Science, CINAHL, the Cochrane Library complemented by a manual search of the Journal of Adhesive Dentistry. The MESH keywords used were: "etch and rinse," "total etch," "self-etch," "dentin bonding agent," "bond durability," and "bond degradation." Included were in-vitro experimental studies performed on human dental tissues of sound tooth structure origin. The examined Self-Etch Bonds were of two subtypes; Two Steps and One Step Self-Etch Bonds, while Etch-and-Rinse Bonds were of two subtypes; Two Steps and Three Steps. The included studies measured micro tensile bond strength (μTBs) to evaluate bond strength and possible longevity of both types of dental adhesives at different times. The selected studies depended on water storage as the aging technique. Statistical analysis was performed for outcome measurements compared at 24 h, 3 months, 6 months and 12 months of water storage. After 24 hours (p-value = 0.051), 3 months (p-value = 0.756), 6 months (p-value=0.267), 12 months (p-value=0.785) of water storage self-etch adhesives showed lower μTBs when compared to the etch-and-rinse adhesives, but the comparisons were statistically insignificant. In this study, longevity of Dentin Bonds was related to the measured μTBs. Although Etch-and-Rinse bonds showed higher values at all times, the meta-analysis found no difference in longevity of the two types of bonds at the examined aging times. Copyright © 2016 Elsevier Inc. All rights reserved.

  15. The chemical and electrochemical anisotropic etching of silicon

    International Nuclear Information System (INIS)

    Dixon, E.

    1997-06-01

    The success of silicon IC technology in producing a wide variety of microstructures relies heavily on the orientation dependant etching observed for silicon in alkaline media. Despite the rapid growth of this industry, the chemical and electrochemical mechanisms by which anisotropic etching occurs remain poorly understood. The most common etchant systems in use are ethylenediamine-pyrocatechol-water (EPW) and potassium hydroxide-isopropanol-water (KOH-IPA), and whilst these systems are highly plane selective they each have distinct disadvantages. The occurrence of inhomogeneities such as micropyramids and pits on the surface of etched substrates is a particularly disadvantageous characteristic of many alkaline etching systems. A complete understanding of the chemical and electrochemical anisotropic etching mechanisms is essential in order to obtain more reproducible etching, improved etch rate ratios and the development of more reliable etching baths. Wet chemical etching experiments to evaluate the etching rates for the different alkali metal cations have shown that similar etch rates are observed for LiOH, NaOH and KOH but those of RbOH and CsOH are significantly lower. The presence of impurities was shown to worsen the etched wafer's surface finish obtained in these etching baths. Additives have been shown to dramatically improve the surface finish with the presence of IPA in conjunction with etchant oxygenation virtually eliminating all surface defects. Electrochemical experiments were used to assess the electrochemical behaviour of Si p-(100) in of a wide variety of etchants and variations were seen according to the etchant used. A.C impedance spectroscopy showed a variation in the flat-band potential (V FB ) according to alkali metal hydroxide etchant used. These trends were similarly observed in the presence of isopropanol. Oxygenation was observed to reproducibly alter the flat-band potentials. A.c impedance spectroscopic studies additionally confirmed the

  16. Long-term bond strength of adhesive systems applied to etched and deproteinized dentin

    Directory of Open Access Journals (Sweden)

    Ninoshka Uceda-Gómez

    2007-12-01

    Full Text Available The aim of this study was to evaluate the early and 12-month bond strength of two adhesive systems (Single Bond-SB and One Step-OS applied to demineralized dentin (WH and demineralized/NaOCl-treated dentin (H. Twenty flat dentin surfaces were exposed, etched, rinsed and slightly dried. For the H groups, a solution of 10% NaOCl was applied for 60 s, rinsed (15 s and slightly dried. The adhesives were applied according to the manufacturer's instructions and composite resin crowns were incrementally constructed. After 24 h (water-37ºC, the specimens was sectioned in order to obtain resin-dentin sticks (0.8 mm². The specimens were tested in microtensile (0.5 mm/min immediately (IM or after 12 months of water storage (12M. The data (MPa were subjected to ANOVA and Tukey's test (a=0.05. Only the main factors adhesive and time were significant (p=0.004 and p=0.003, respectively. SB (42.3±9.1 showed higher bond strengths than OS (33.6±11.6. The mean bond strength for IM-group (42.5±8.7 was statistically superior to 12M (33.3±11.8. The use of 10% NaOCl, after acid etching, did not improve the immediate and the long-term resin-dentin bond strength.

  17. Etched ion track polymer membranes for sustained drug delivery

    International Nuclear Information System (INIS)

    Rao, Vijayalakshmi; Amar, J.V.; Avasthi, D.K.; Narayana Charyulu, R.

    2003-01-01

    The method of track etching has been successfully used for the production of polymer membranes with capillary pores. In the present paper, micropore membranes have been prepared by swift heavy ion irradiation of polycarbonate (PC). PC films were irradiated with ions of gold, silicon and oxygen of varying energies and fluence. The ion tracks thus obtained were etched chemically for various time intervals to get pores and these etched films were used as membranes for the drug release. Ciprofloxacine hydrochloride was used as model drug for the release studies. The drug content was estimated spectrophotometrically. Pore size and thus the drug release is dependent on the etching conditions, ions used, their energy and fluence. Sustained drug release has been observed in these membranes. The films can be selected for practical utilization by optimizing the irradiation and etching conditions. These films can be used as transdermal patches after medical treatment

  18. Features of copper etching in chlorine-argon plasma

    International Nuclear Information System (INIS)

    Efremov, A.M.; Svettsov, V.I.

    1995-01-01

    Chlorine mixtures with inert gases including argon exhibit promise as plasma feed gases for etching metals and semiconductors in the microelectronics industry. It was shown that even strong dilution of reactive gas with an inert gas (up to 80-90% of the latter) has virtually no effect in decreasing the rate of plasma etching of materials such as silicon and gallium arsenide, compared to etching in pure chlorine. The principal reactive species responsible for etching these substrates are chlorine atoms therefore, a possible explanation of the effect is an increase in the rate of bulk generation of chlorine atoms in the presence of argon. In this work the authors studied the influence of argon on the rate of copper etching in chlorine, because copper, unlike the above substrates, reacts effectively not only with the atoms but with the ground-state molecules of chlorine

  19. Future developments in etched track detectors for neutron dosimetry

    International Nuclear Information System (INIS)

    Tommasino, L.

    1987-01-01

    Many laboratories engaged in the field of personal neutron dosimetry are interested in developing better etching processes and improving the CR-39 detecting materials. To know how much effort must still be devoted to the development of etch track dosimetry, it is necessary to understand the advantages. limitations and degree of exploitation of the currently available techniques. So much has been learned about the chemical and electrochemical etching processes that an optimised combination of etching processes could make possible the elimination of many of the existing shortcomings. Limitations of etched track detectors for neutron dosimetry arise mainly because the registration occurs only on the detector surface. These damage type detectors are based on radiation induced chain scission processes in polymers, which result in hole-type tracks in solids. The converse approach, yet to be discovered, would be the development of cure-track detectors, where radiation induced cross linking between organic polymer chains could result in solid tracks in liquids. (author)

  20. Optimization of permanganic etching of polyethylenes for scanning electron microscopy

    International Nuclear Information System (INIS)

    Naylor, K.L.; Phillips, P.J.

    1983-01-01

    The permanganic etching technique has been studied as a function of time, temperature, and concentration for a series of polyethylenes. Kinetic studies show that a film of reaction products builds up on the surface, impeding further etching, an effect which is greatest for the lowest-crystallinity polymers. SEM studies combined with EDS show that the film contains sulfur, potassium and some manganese. An artifact is produced by the etching process which is impossible to remove by washing procedures if certain limits of time, temperature, and concentration are exceeded. For lower-crystallinity polyethylenes multiple etching and washing steps were required for optimal resolution. Plastic deformation during specimen preparation, whether from scratches or freeze fracturing, enhances artifact formation. When appropriate procedures are used, virtually artifact-free surfaces can be produced allowing a combination of permanganic etching and scanning electron microscopy to give a rapid method for detailed morphological characterization of bulk specimens

  1. Etch characteristics of BCB film using inductively coupled plasma

    International Nuclear Information System (INIS)

    Kang, Pil Seung; Kim, Dong Pyo; Kim, Kyoung Tae; Kim, Chang Il; Kim, Sang Gi

    2003-01-01

    The etching characteristics and mechanism of BCB thin films were investigated as a function of CF 4 /O 2 mixing ratio in ICP system. Maximum etch rate of 830 nm/min is obtained at the mixture of O 2 /CF 4 (=80%/20%). OES actinometry results showed that volume density of oxygen atoms fallows the same extreme behavior with the BCB etch rate, while the density of fluorine atoms changes monotonously. Therefore chemical destruction of BCB by oxygen atoms was proposed as the dominant etch mechanism. XPS analysis showed that the addition of CF 4 to O 2 helps to volatilize silicon atoms containing in BCB but leads to the formation of F-containing polymer layer. The profile of etched BCB film was close to 90 .deg. and the surface was clean

  2. Effects of mask imperfections on InP etching profiles

    International Nuclear Information System (INIS)

    Huo, D.T.C.; Yan, M.F.; Wynn, J.D.; Wilt, D.P.

    1990-01-01

    The authors have demonstrated that the quality of etch masks has a significant effect on the InP etching profiles. In particular, the authors have shown that mask imperfections can cause defective etching profiles, such as vertical sidewalls and extra mask undercutting in InP. The authors also discovered that the geometry of these defective profiles is determined by the orientation of the substrate relative to the direction of the mask imperfections. Along a left-angle 110 right-angle line mask defect, the downward etching process changes the left-angle 110 right-angle v-grooves to vertical sidewalls without extra undercutting. For v-grooves aligned along the left-angle 110 right-angle direction, defects on the mask give a significant extra undercutting without changing the etching profile

  3. Optical-fiber strain sensors with asymmetric etched structures.

    Science.gov (United States)

    Vaziri, M; Chen, C L

    1993-11-01

    Optical-fiber strain gauges with asymmetric etched structures have been analyzed, fabricated, and tested. These sensors are very sensitive with a gauge factor as high as 170 and a flat frequency response to at least 2.7 kHz. The gauge factor depends on the asymmetry of the etched structures and the number of etched sections. To understand the physical principles involved, researchers have used structural analysis programs based on a finite-element method to analyze fibers with asymmetric etched structures under tensile stress. The results show that lateral bends are induced on the etched fibers when they are stretched axially. To relate the lateral bending to the optical attenuation, we have also employed a ray-tracing technique to investigate the dependence of the attenuation on the structural deformation. Based on the structural analysis and the ray-tracing study parameters affecting the sensitivity have been studied. These results agree with the results of experimental investigations.

  4. Photonic jet μ-etching: from static to dynamic process

    Science.gov (United States)

    Abdurrochman, A.; Lecler, S.; Zelgowski, J.; Mermet, F.; Fontaine, J.; Tumbelaka, B. Y.

    2017-05-01

    Photonic jet etching is a direct-laser etching method applying photonic jet phenomenon to concentrate the laser beam onto the proceeded material. We call photonic jet the phenomenon of the localized sub-wavelength propagative beam generated at the shadow-side surfaces of micro-scale dielectric cylinders or spheres, when they are illuminated by an electromagnetic plane-wave or laser beam. This concentration has made possible the laser to yield sub-μ etching marks, despite the laser was a near-infrared with nano-second pulses sources. We will present these achievements from the beginning when some spherical glasses were used for static etching to dynamic etching using an optical fiber with a semi-elliptical tip.

  5. ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

    Science.gov (United States)

    Huang, Min; Chen, Jianxin; Xu, Jiajia; Wang, Fangfang; Xu, Zhicheng; He, Li

    2018-05-01

    In this work, we study and report the dry etching processes for InAs-based InAs/GaAsSb strain-free superlattice long wavelength infrared (LWIR) detectors. The proper etching parameters were first obtained through the parametric studies of Inductively Coupled Plasma (ICP) etching of both InAs and GaSb bulk materials in Cl2/N2 plasmas. Then an InAs-based InAs/GaAsSb superlattice LWIR detector with PπN structure was fabricated by using the optimized etching parameters. At 80 K, the detector exhibits a 100% cut-off wavelength of 12 μm and a responsivity of 1.5 A/W. Moreover, the dark current density of the device under a bias of -200 mV reaches 5.5 × 10-4 A/cm2, and the R0A is 15 Ω cm2. Our results pave the way towards InAs-based superlattice LWIR detectors with better performances.

  6. A novel deep reactive ion etched (DRIE) glass micro-model for two-phase flow experiments.

    Science.gov (United States)

    Karadimitriou, N K; Joekar-Niasar, V; Hassanizadeh, S M; Kleingeld, P J; Pyrak-Nolte, L J

    2012-09-21

    In the last few decades, micro-models have become popular experimental tools for two-phase flow studies. In this work, the design and fabrication of an innovative, elongated, glass-etched micro-model with dimensions of 5 × 35 mm(2) and constant depth of 43 microns is described. This is the first time that a micro-model with such depth and dimensions has been etched in glass by using a dry etching technique. The micro-model was visualized by a novel setup that allowed us to monitor and record the distribution of fluids throughout the length of the micro-model continuously. Quasi-static drainage experiments were conducted in order to obtain equilibrium data points that relate capillary pressure to phase saturation. By measuring the flow rate of water through the flow network for known pressure gradients, the intrinsic permeability of the micro-model's flow network was also calculated. The experimental results were used to calibrate a pore-network model and test its validity. Finally, we show that glass-etched micro-models can be valuable tools in single and/or multi-phase flow studies and their applications.

  7. Effect of etching on bonding of a self-etch adhesive to dentine affected by amelogenesis imperfecta.

    Science.gov (United States)

    Epasinghe, Don Jeevanie; Yiu, Cynthia Kar Yung

    2018-02-01

    Dentine affected by amelogenesis imperfecta (AI) is histologically altered due to loss of hypoplastic enamel and becomes hypermineralized. In the present study, we examined the effect of additional acid etching on microtensile bond strength of a self-etch adhesive to AI-affected dentine. Flat coronal dentine obtained from extracted AI-affected and non-carious permanent molars were allocated to two groups: (a) Clearfil SE Bond (control); and (b) Clearfil SE Bond and additional etching with 34% phosphoric acid for 15 seconds. The bonded teeth were sectioned into .8-mm 2 beams for microtensile bond strength testing, and stressed to failure under tension. The bond strength data were analyzed using two-way analysis of variance (dentine type and etching step) and Student-Newman-Keuls multiple comparison test (P<.05). Representative fractured beams from each group were examined under scanning electron microscopy. Both factors, dentine substrate (P<.001) and etching step (P<.05), and their interactions (P<.001), were statistically significant. Additional etching had an adverse effect on the bond strength of Clearfil SE Bond to normal dentine (P<.005), and no significant improvement was found for AI-affected dentine (P=.479). Additional acid etching does not improve the bond strength of a self-etch adhesive to AI-affected dentine. © 2017 John Wiley & Sons Australia, Ltd.

  8. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    International Nuclear Information System (INIS)

    Ji, J; Tay, F E H; Miao Jianmin; Sun Jianbo

    2006-01-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions

  9. Characterization of silicon isotropic etch by inductively coupled plasma etcher for microneedle array fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Ji, J [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Tay, F E H [Mechanical Engineering National University of Singapore, 119260, Singapore (Singapore); Miao Jianmin [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technologica l University, 50 Nanyang Avenue, 639798 (Singapore); Sun Jianbo [MicroMachines Center, School of Mechanical and Aerospace Engineering, Nanyang Technologica l University, 50 Nanyang Avenue, 639798 (Singapore)

    2006-04-01

    This work investigates the isotropic etching properties in inductively coupled plasma (ICP) etcher for microneedle arrays fabrication. The effects of process variables including powers, gas and pressure on needle structure generation are characterized by factorial design of experiment (DOE). The experimental responses of vertical etching depth, lateral etching length, ratio of vertical etching depth to lateral etching length and photoresist etching rate are reported. The relevance of the etching variables is also presented. The obtained etching behaviours for microneedle structure generation will be applied to develop recipes to fabricate microneedles in designed dimensions.

  10. Measurement of deeply virtual Compton scattering using the ZEUS detector at HERA

    International Nuclear Information System (INIS)

    Grabowska-Bold, I.

    2004-08-01

    The cross sections for deeply virtual compton scattering in the reaction ep → e'γp' has been measured with the ZEUS detector at HERA using integrated luminosities of 95 pb -1 of e + p and 17 pb -1 of e - p collisions. Cross sections are presented as a function of the exchanged photon virtuality, Q 2 , and the centre-of-mass energy, W, of the γ * p system in the region 5 2 2 and 40 < W < 140 GeV. The obtained results are compared to QCD-based calculations. (orig.)

  11. Experimental Demonstration of Effective Medium Approximation Breakdown in Deeply Subwavelength All-Dielectric Multilayers

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Andryieuski, Andrei; Takayama, Osamu

    2015-01-01

    We report the first experimental demonstration of anomalous breakdown of the effective medium approximation in all-dielectric deeply subwavelength thickness (d∼λ/160-λ/30) multilayers, as recently predicted theoretically [H. H. Sheinfux et al., Phys. Rev. Lett. 113, 243901 (2014)]. Multilayer...... stacks are composed of alternating alumina and titania layers fabricated using atomic layer deposition. For light incident on such multilayers at angles near the total internal reflection, we observe pronounced differences in the reflectance spectra for structures with 10- vs 20-nm thick layers, as well...

  12. High-energy electroweak neutrino-nucleon deeply virtual Compton scattering

    International Nuclear Information System (INIS)

    Machado, Magno V. T.

    2007-01-01

    In this work we estimate the differential and total cross sections for the high-energy deeply virtual Compton scattering in the weak sector. In the weak neutral sector one considers neutrino scattering off an unpolarized proton target through the exchange of Z 0 . We numerically compute the process Z*p→γp within the QCD color dipole formalism, which successfully describes the current high-energy electromagnetic DVCS experimental data. We also discuss possible applications for the weak charged sector and perform predictions for scattering on nuclear targets

  13. Transport theory for deeply inelastic heavy-ion collisions within the statistical model

    International Nuclear Information System (INIS)

    Shlomo, S.

    1978-01-01

    The theory I am going to describe has been developed recently by Agassi, Ko and Weidenmueller. It is based on a random-matrix model for the form factor (FF) which couples a collective degree of freedom, taken to be the distance anti r between the two ions, with the intrinsic degrees of freedom. This study of dissipative phenomena in a microsystem was triggered by the success of the simple friction and diffusion models in describing experimental data on deeply inelastic collisions. I plan to describe the underlying physical assumptions, to outline the theoretical developments and to show some very recent results. (orig.) [de

  14. Crystal growth vs. conventional acid etching: A comparative evaluation of etch patterns, penetration depths, and bond strengths

    Directory of Open Access Journals (Sweden)

    Devanna Raghu

    2008-01-01

    Full Text Available The present study was undertaken to investigate the effect on enamel surface, penetration depth, and bond strength produced by 37% phosphoric acid and 20% sulfated polyacrylic acid as etching agents for direct bonding. Eighty teeth were used to study the efficacy of the etching agents on the enamel surface, penetration depth, and tensile bond strength. It was determined from the present study that a 30 sec application of 20% sulfated polyacrylic acid produced comparable etching topography with that of 37% phosphoric acid applied for 30 sec. The 37% phosphoric acid dissolves enamel to a greater extent than does the 20% sulfated polyacrylic acid. Instron Universal testing machine was used to evaluate the bond strengths of the two etching agents. Twenty percent sulfated polyacrylic acid provided adequate tensile bond strength. It was ascertained that crystal growth can be an alternative to conventional phosphoric acid etching as it dissolves lesser enamel and provides adequate tensile bond strength.

  15. Interrelated temperature dependence of bulk etch rate and track length saturation time in CR-39 detector

    International Nuclear Information System (INIS)

    Azooz, A.A.; Al-Jubbori, M.A.

    2013-01-01

    Highlights: • New empirical parameterization of CR-39 bulk etch rate. • Bulk etch rates measurements using two different methods give consistent results. • Temperature independence of track saturation length. • Two empirical relation between bulk etch rate and temperature are suggested. • Simple inverse relation between bulk etch rate and track saturation time. -- Abstract: Experimental measurements of the etching solution temperature dependence of bulk etch rate using two independent methods revealed a few interesting properties. It is found that while the track saturation length is independent of etching temperature, the etching time needed to reach saturation is strongly temperature-dependent. It is demonstrated that there is systematic simple inverse relation between track saturation time, and etching solution temperature. In addition, and although, the relation between the bulk etch rate and etching solution temperature can be reasonably described by a modified form of the Arrhenius equation, better fits can be obtained by another equation suggested in this work

  16. Deciphering the recent phylogenetic expansion of the originally deeply rooted Mycobacterium tuberculosis lineage 7.

    Science.gov (United States)

    Yimer, Solomon A; Namouchi, Amine; Zegeye, Ephrem Debebe; Holm-Hansen, Carol; Norheim, Gunnstein; Abebe, Markos; Aseffa, Abraham; Tønjum, Tone

    2016-06-30

    A deeply rooted phylogenetic lineage of Mycobacterium tuberculosis (M. tuberculosis) termed lineage 7 was discovered in Ethiopia. Whole genome sequencing of 30 lineage 7 strains from patients in Ethiopia was performed. Intra-lineage genome variation was defined and unique characteristics identified with a focus on genes involved in DNA repair, recombination and replication (3R genes). More than 800 mutations specific to M. tuberculosis lineage 7 strains were identified. The proportion of non-synonymous single nucleotide polymorphisms (nsSNPs) in 3R genes was higher after the recent expansion of M. tuberculosis lineage 7 strain started. The proportion of nsSNPs in genes involved in inorganic ion transport and metabolism was significantly higher before the expansion began. A total of 22346 bp deletions were observed. Lineage 7 strains also exhibited a high number of mutations in genes involved in carbohydrate transport and metabolism, transcription, energy production and conversion. We have identified unique genomic signatures of the lineage 7 strains. The high frequency of nsSNP in 3R genes after the phylogenetic expansion may have contributed to recent variability and adaptation. The abundance of mutations in genes involved in inorganic ion transport and metabolism before the expansion period may indicate an adaptive response of lineage 7 strains to enable survival, potentially under environmental stress exposure. As lineage 7 strains originally were phylogenetically deeply rooted, this may indicate fundamental adaptive genomic pathways affecting the fitness of M. tuberculosis as a species.

  17. Deeply Virtual Compton Scattering off a deuterium target at the HERMES experiment

    International Nuclear Information System (INIS)

    Movsisyan, Aram

    2011-05-01

    Deeply virtual Compton scattering is studied in this report, using all data collected at the HERMES experiment from 1996 to 2005. Azimuthal asymmetries with respect to beam-helicity, beam-charge and target polarization alone and also to their different combinations for hard exclusive electroproduction of real photons in deep-inelastic scattering from a both unpolarized and longitudinally polarized deuterium targets are measured. The asymmetries are attributed to the interference between the deeply virtual Compton scattering and Bethe-Heitler processes. The asymmetries are observed in the exclusive region -(1.5) 2 GeV 2 2 X 2 GeV 2 of the squared missing mass. The dependences of these asymmetries on -t, x N , or Q 2 are investigated. The results include the coherent process ed→edγ and the incoherent process ed→epnγ where in addition a nucleon may be excited to a resonance. For an unpolarized deuterium target, the leading Fourier amplitude of the beam-helicity asymmetry that is sensitive to the interference term is found to be substantial, but no significant t dependence is observed. The leading amplitude of the beam-charge asymmetry is substantial at large -t, but becomes small at small values of -t. The amplitudes of the beam-helicity asymmetry that are sensitive to the squared DVCS term are found to be consistent with zero. The deuteron Compton form factor H 1 appears to have a similar behavior as H of the proton. (orig.)

  18. Earthquake response characteristics of large structure 'JOYO' deeply embedded in quaternary ground, (3)

    International Nuclear Information System (INIS)

    Yajima, Hiroshi; Sawada, Yoshihiro; Hanada, Kazutake; Sawada, Makoto.

    1987-01-01

    In order to examine aseismicity of embedded structure and to clarify embedment effect, earthquake observations of the large structure 'JOYO' are carried out which is deeply embedded in quaternary ground, and the results are summarized as follows. (1) Amplification factors of horizontal component in ground surface is about 3 to 4 times against the bedrock. Contrastively on the structure, any amplification is not observed at the underground portion, however, little amplification exists at the ground portion of structure. (2) Transfer function of structure has several predominant peaks at frequencies of 4.3 Hz and 8.0 Hz which are well coincided with values obtained from force excitation tests. It is shown that transfer function between basement and ground surface is similar to that between ground of same level to basement and ground surface, suggesting the behavior of basement to be able to estimate by these under ground earthquake motion. (3) According to earthquake motion analysis using S-R models, without regard to consider or not the side ground stiffness, the calculated response values do not so much differ in each model and mostly correspond with observation data, provided that the underground earthquake motion at same level to basement is used as a input wave. Consequently, the behavior of these deeply embedded structure is subject to setting method of input wave rather than modeling method, and it is very useful in design that the most simple model without side ground stiffness can roughly represent the embedment effect. (author)

  19. Kinematics of current region fragmentation in semi-inclusive deeply inelastic scattering

    Energy Technology Data Exchange (ETDEWEB)

    Boglione, M., E-mail: elena.boglione@to.infn.it [Dipartimento di Fisica, Università di Torino, INFN - Sezione Torino, Via P. Giuria 1, 10125 Torino (Italy); Collins, J., E-mail: jcc8@psu.edu [Department of Physics, Penn State University, University Park, PA 16802 (United States); Gamberg, L., E-mail: lpg10@psu.edu [Science Division, Penn State University Berks, Reading, PA 19610 (United States); Gonzalez-Hernandez, J.O., E-mail: jogh@jlab.org [Department of Physics, Old Dominion University, Norfolk, VA 23529 (United States); Theory Center, Jefferson Lab, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Rogers, T.C., E-mail: trogers@odu.edu [Department of Physics, Old Dominion University, Norfolk, VA 23529 (United States); Theory Center, Jefferson Lab, 12000 Jefferson Avenue, Newport News, VA 23606 (United States); Sato, N., E-mail: nsato@jlab.org [Theory Center, Jefferson Lab, 12000 Jefferson Avenue, Newport News, VA 23606 (United States)

    2017-03-10

    Different kinematical regions of semi-inclusive deeply inelastic scattering (SIDIS) processes correspond to different underlying partonic pictures, and it is important to understand the transition between them. We find criteria in semi-inclusive deeply inelastic scattering (SIDIS) for identifying the current fragmentation region — the kinematical region where a factorization picture with fragmentation functions is appropriate, especially for studies of transverse-momentum-dependent (TMD) functions. This region is distinguished from the central (soft) and target fragmentation regions. The basis of our argument is in the errors in approximations used in deriving factorization. As compared with previous work, we show that it is essential to take account of the transverse momentum of the detected hadron, and we find a much more restricted range for genuine current fragmentation. We show that it is important to develop an extended factorization formulation to treat hadronization in the central region, as well as the current and target fragmentation regions, and to obtain a unified formalism spanning all rapidities for the detected hadron.

  20. Defect sensitive etching of hexagonal boron nitride single crystals

    Science.gov (United States)

    Edgar, J. H.; Liu, S.; Hoffman, T.; Zhang, Yichao; Twigg, M. E.; Bassim, Nabil D.; Liang, Shenglong; Khan, Neelam

    2017-12-01

    Defect sensitive etching (DSE) was developed to estimate the density of non-basal plane dislocations in hexagonal boron nitride (hBN) single crystals. The crystals employed in this study were precipitated by slowly cooling (2-4 °C/h) a nickel-chromium flux saturated with hBN from 1500 °C under 1 bar of flowing nitrogen. On the (0001) planes, hexagonal-shaped etch pits were formed by etching the crystals in a eutectic mixture of NaOH and KOH between 450 °C and 525 °C for 1-2 min. There were three types of pits: pointed bottom, flat bottom, and mixed shape pits. Cross-sectional transmission electron microscopy revealed that the pointed bottom etch pits examined were associated with threading dislocations. All of these dislocations had an a-type burgers vector (i.e., they were edge dislocations, since the line direction is perpendicular to the [ 2 11 ¯ 0 ]-type direction). The pit widths were much wider than the pit depths as measured by atomic force microscopy, indicating the lateral etch rate was much faster than the vertical etch rate. From an Arrhenius plot of the log of the etch rate versus the inverse temperature, the activation energy was approximately 60 kJ/mol. This work demonstrates that DSE is an effective method for locating threading dislocations in hBN and estimating their densities.

  1. Model of wet chemical etching of swift heavy ions tracks

    Science.gov (United States)

    Gorbunov, S. A.; Malakhov, A. I.; Rymzhanov, R. A.; Volkov, A. E.

    2017-10-01

    A model of wet chemical etching of tracks of swift heavy ions (SHI) decelerated in solids in the electronic stopping regime is presented. This model takes into account both possible etching modes: etching controlled by diffusion of etchant molecules to the etching front, and etching controlled by the rate of a reaction of an etchant with a material. Olivine ((Mg0.88Fe0.12)2SiO4) crystals were chosen as a system for modeling. Two mechanisms of chemical activation of olivine around the SHI trajectory are considered. The first mechanism is activation stimulated by structural transformations in a nanometric track core, while the second one results from neutralization of metallic atoms by generated electrons spreading over micrometric distances. Monte-Carlo simulations (TREKIS code) form the basis for the description of excitations of the electronic subsystem and the lattice of olivine in an SHI track at times up to 100 fs after the projectile passage. Molecular dynamics supplies the initial conditions for modeling of lattice relaxation for longer times. These simulations enable us to estimate the effects of the chemical activation of olivine governed by both mechanisms. The developed model was applied to describe chemical activation and the etching kinetics of tracks of Au 2.1 GeV ions in olivine. The estimated lengthwise etching rate (38 µm · h-1) is in reasonable agreement with that detected in the experiments (24 µm · h-1).

  2. Feedback control of chlorine inductively coupled plasma etch processing

    International Nuclear Information System (INIS)

    Lin Chaung; Leou, K.-C.; Shiao, K.-M.

    2005-01-01

    Feedback control has been applied to poly-Si etch processing using a chlorine inductively coupled plasma. Since the positive ion flux and ion energy incident upon the wafer surface are the key factors that influence the etch rate, the ion current and the root mean square (rms) rf voltage on the wafer stage, which are measured using an impedance meter connected to the wafer stage, are adopted as the controlled variables to enhance etch rate. The actuators are two 13.56 MHz rf power generators, which adjust ion density and ion energy, respectively. The results of closed-loop control show that the advantages of feedback control can be achieved. For example, with feedback control, etch rate variation under the transient chamber wall condition is reduced roughly by a factor of 2 as compared to the open-loop case. In addition, the capability of the disturbance rejection was also investigated. For a gas pressure variation of 20%, the largest etch rate variation is about 2.4% with closed-loop control as compared with as large as about 6% variation using open-loop control. Also the effect of ion current and rms rf voltage on etch rate was studied using 2 2 factorial design whose results were used to derive a model equation. The obtained formula was used to adjust the set point of ion current and rf voltage so that the desired etch rate was obtained

  3. Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Miao-Rong [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); University of Chinese Academy of Sciences, 100049 Beijing (China); Hou, Fei; Wang, Zu-Gang; Zhang, Shao-Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); Changchun University of Science and Technology, 130022 Changchun (China); Pan, Ge-Bo, E-mail: gbpan2008@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China)

    2017-07-15

    Graphical abstract: GaN surface was etched by 0.3 M EDTA-2Na. The proposed complexation dissolution mechanism can be applicable to almost all neutral etchants under the prerequisite of strong light and electric field. - Highlights: • GaN surface was etched by EDTA-2Na. • GaN may be dissolved into EDTA-2Na by forming Ga–EDTA complex. • We propose the complexation dissolution mechanism for the first time. - Abstract: Gallium nitride (GaN) surface was etched by 0.3 M ethylenediamine tetraacetic acid disodium (EDTA-2Na) via photoelectrochemical etching technique. SEM images reveal the etched GaN surface becomes rough and irregular. The pore density is up to 1.9 × 10{sup 9} per square centimeter after simple acid post-treatment. The difference of XPS spectra of Ga 3d, N 1s and O 1s between the non-etched and freshly etched GaN surfaces can be attributed to the formation of Ga–EDTA complex at the etching interface between GaN and EDTA-2Na. The proposed complexation dissolution mechanism can be broadly applicable to almost all neutral etchants under the prerequisite of strong light and electric field. From the point of view of environment, safety and energy, EDTA-2Na has obvious advantages over conventionally corrosive etchants. Moreover, as the further and deeper study of such nearly neutral etchants, GaN etching technology has better application prospect in photoelectric micro-device fabrication.

  4. COMPOSITE RESIN BOND STRENGTH TO ETCHED DENTINWITH ONE SELF PRIMING ADHESIVE

    Directory of Open Access Journals (Sweden)

    P SAMIMI

    2002-09-01

    Full Text Available Introduction. The purpose of this study was to compare shear bond strength of composite resins to etched dentin in both dry and wet dentin surface with active and inactive application of a single-bottle adhesive resin (Single Bond, 3M Dental products. Methods. Fourthy four intact human extracted molars and premolars teeth were selected. The facial surfaces of the teeth were grounded with diamond bur to expose dentin. Then specimens were divided into four groups of 11 numbers (9 Molars and 2 Premolars. All the samples were etched with Phosphoric Acid Gel 35% and then rinsed for 10 seconds. The following stages were carried out for each group: Group I (Active-Dry: After rinsing, air drying of dentin surface for 15 seconds, active priming of adhesive resin for 15 seconds, air drying for 5 seconds, the adhesive resin layer was light cured for 10 seconds. Group III (Inactive-Dry:After rinsing, air drying of dentin surface for 15 seconds, adhesive resin was applied and air dryied for 5 seconds, the adhesive layer was light cured for 10 seconds. Group III (Active-Wet:After rinsing, removal of excess water of dentin surface with a cotton roll, active priming of adhesive resin for 15 seconds and air drying for 5 seconds, the adhesive layer was light cured for 10 seconds. Group IV (Inactive-Wet:After rinsing, removal of excess water of dentin surface with a cotton roll, the adhesive resin was applied and air dryied for 5 seconds and then cured for 10 seconds. After adhesive resin application, composite resin (Z250, 3M Dental products was applied on prepared surface with cylindrical molds (with internal diameter of 2.8mm, & height of 5mm and light-cured for 100 seconds (5x20s. The samples were then thermocycled. They were located in 6±3c water .temperature for 10 seconds and then 15 seconds in inviromental temperature, 10s in 55±3c water temperature and then were located at room temperature for 15s. This test was repeated for 100s. All of the specimens

  5. What Is Dry Eye?

    Medline Plus

    Full Text Available ... Eye? Dry Eye Symptoms Causes of Dry Eye Dry Eye Treatment What Is Dry Eye? Leer en Español: ¿Qué ... Inside of Your Eyelid Nov 29, 2017 New Dry Eye Treatment is a Tear-Jerker Jul 21, 2017 Three ...

  6. What Is Dry Eye?

    Science.gov (United States)

    ... Eye? Dry Eye Symptoms Causes of Dry Eye Dry Eye Treatment What Is Dry Eye? Leer en Español: ¿Qué ... Inside of Your Eyelid Nov 29, 2017 New Dry Eye Treatment is a Tear-Jerker Jul 21, 2017 Three ...

  7. High-throughput anisotropic plasma etching of polyimide for MEMS

    International Nuclear Information System (INIS)

    Bliznetsov, Vladimir; Manickam, Anbumalar; Ranganathan, Nagarajan; Chen, Junwei

    2011-01-01

    This note describes a new high-throughput process of polyimide etching for the fabrication of MEMS devices with an organic sacrificial layer approach. Using dual frequency superimposed capacitively coupled plasma we achieved a vertical profile of polyimide with an etching rate as high as 3.5 µm min −1 . After the fabrication of vertical structures in a polyimide material, additional steps were performed to fabricate structural elements of MEMS by deposition of a SiO 2 layer and performing release etching of polyimide. (technical note)

  8. Spot formation of radiation particles by electrochemical etching

    International Nuclear Information System (INIS)

    Nozaki, Tetsuya

    1999-01-01

    An electrochemical etching (ECE) spot formation from the top of chemical etching (CE) spot was confirmed by a series of experiments. One of polycarbonate (Iupilon) could not make the spot, because ECE spot had grown up before the microscope confirming the CE spot. Clear CEC spots by α-ray and neutron were found on Harzlas and Baryotrak, both improvements of CR-39. Under the same etching conditions, the growth of ECE spot on Harzlas was more rapid than Baryotrak, but both spots were almost the same. All CE spot by α-ray produced the CEC spots, but a part of CE circle spot by neutron formed them. (S.Y.)

  9. Anisotropic etching of tungsten-nitride with ICP system

    CERN Document Server

    Lee, H G; Moon, H S; Kim, S H; Ahn, J; Sohn, S

    1998-01-01

    Inductively Coupled Plasma ion streaming etching of WN sub x film is investigated for preparing x-ray mask absorber patterns. SF sub 6 gas plasma provides for effective etching of WN sub x , and the addition of Ar and N sub 2 results in higher dissociation of SF sub 6 and sidewall passivation effect, respectively. Microloading effect observed for high aspect ratio patterns is minimized by multi-step etching and O sub 2 plasma treatment process. As a result, 0.18 mu m WN sub x line and space patterns with vertical sidewall profile are successfully fabricated.

  10. Metal-assisted chemical etch porous silicon formation method

    Science.gov (United States)

    Li, Xiuling; Bohn, Paul W.; Sweedler, Jonathan V.

    2004-09-14

    A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H.sub.2 O.sub.2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.

  11. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

    Science.gov (United States)

    Kim, Minkyu; Jeong, Jong Han; Lee, Hun Jung; Ahn, Tae Kyung; Shin, Hyun Soo; Park, Jin-Seong; Jeong, Jae Kyeong; Mo, Yeon-Gon; Kim, Hye Dong

    2007-05-01

    The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiOx layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W /L=10μm/50μm) fabricated on glass exhibited a high field-effect mobility of 35.8cm2/Vs, a subthreshold gate swing value of 0.59V/decade, a thrseshold voltage of 5.9V, and an Ion/off ratio of 4.9×106, which is acceptable for use as the switching transistor of an active-matrix TFT backplane.

  12. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

    International Nuclear Information System (INIS)

    Kim, Minkyu; Jeong, Jong Han; Lee, Hun Jung; Ahn, Tae Kyung; Shin, Hyun Soo; Park, Jin-Seong; Jeong, Jae Kyeong; Mo, Yeon-Gon; Kim, Hye Dong

    2007-01-01

    The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiO x layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W/L=10 μm/50 μm) fabricated on glass exhibited a high field-effect mobility of 35.8 cm 2 /V s, a subthreshold gate swing value of 0.59 V/decade, a thrseshold voltage of 5.9 V, and an I on/off ratio of 4.9x10 6 , which is acceptable for use as the switching transistor of an active-matrix TFT backplane

  13. Physicochemical characteristics of PFC surfactants for dry decontamination

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Won Jin; Lee, Chi Woo [Korea University, Seoul (Korea)

    2001-04-01

    Even the trace amount of the used nuclear fuels of high radioactivity are hazardous to the earth and humans. Perfluorocarbons and perfluorocarbon surfactants are emerging to be efficient chemicals in the dry decontamination process of the used fuels of high radioactivity. The theme was undertaken to increase the knowledge on perfluorocarbon surfactants to develop the perfluorocarbon system in the dry decontamination process in Korea. Several cationic and anionic pfc surfactants were synthesized. Effects of pfc surfactants on electrochemical etching of silicon were investigated to form porous silicons. Forces were measured between silicon surfaces and AFM tip in the absence and presence of pfc surfactants. 7 refs., 10 figs. (Author)

  14. A nontransferring dry adhesive with hierarchical polymer nanohairs

    KAUST Repository

    Jeong, H. E.

    2009-03-20

    We present a simple yet robust method for fabricating angled, hierarchically patterned high-aspect-ratio polymer nanohairs to generate directionally sensitive dry adhesives. The slanted polymeric nanostructures were molded from an etched polySi substrate containing slanted nanoholes. An angled etching technique was developed to fabricate slanted nanoholes with flat tips by inserting an etch-stop layer of silicon dioxide. This unique etching method was equipped with a Faraday cage system to control the ion-incident angles in the conventional plasma etching system. The polymeric nanohairs were fabricated with tailored leaning angles, sizes, tip shapes, and hierarchical structures. As a result of controlled leaning angle and bulged flat top of the nanohairs, the replicated, slanted nanohairs showed excellent directional adhesion, exhibiting strong shear attachment (approximately 26 N/cm(2) in maximum) in the angled direction and easy detachment (approximately 2.2 N/cm(2)) in the opposite direction, with a hysteresis value of approximately 10. In addition to single scale nanohairs, monolithic, micro-nanoscale combined hierarchical hairs were also fabricated by using a 2-step UV-assisted molding technique. These hierarchical nanoscale patterns maintained their adhesive force even on a rough surface (roughness <20 microm) because of an increase in the contact area by the enhanced height of hierarchy, whereas simple nanohairs lost their adhesion strength. To demonstrate the potential applications of the adhesive patch, the dry adhesive was used to transport a large-area glass (47.5 x 37.5 cm(2), second-generation TFT-LCD glass), which could replace the current electrostatic transport/holding system with further optimization.

  15. A nontransferring dry adhesive with hierarchical polymer nanohairs.

    Science.gov (United States)

    Jeong, Hoon Eui; Lee, Jin-Kwan; Kim, Hong Nam; Moon, Sang Heup; Suh, Kahp Y

    2009-04-07

    We present a simple yet robust method for fabricating angled, hierarchically patterned high-aspect-ratio polymer nanohairs to generate directionally sensitive dry adhesives. The slanted polymeric nanostructures were molded from an etched polySi substrate containing slanted nanoholes. An angled etching technique was developed to fabricate slanted nanoholes with flat tips by inserting an etch-stop layer of silicon dioxide. This unique etching method was equipped with a Faraday cage system to control the ion-incident angles in the conventional plasma etching system. The polymeric nanohairs were fabricated with tailored leaning angles, sizes, tip shapes, and hierarchical structures. As a result of controlled leaning angle and bulged flat top of the nanohairs, the replicated, slanted nanohairs showed excellent directional adhesion, exhibiting strong shear attachment (approximately 26 N/cm(2) in maximum) in the angled direction and easy detachment (approximately 2.2 N/cm(2)) in the opposite direction, with a hysteresis value of approximately 10. In addition to single scale nanohairs, monolithic, micro-nanoscale combined hierarchical hairs were also fabricated by using a 2-step UV-assisted molding technique. These hierarchical nanoscale patterns maintained their adhesive force even on a rough surface (roughness <20 microm) because of an increase in the contact area by the enhanced height of hierarchy, whereas simple nanohairs lost their adhesion strength. To demonstrate the potential applications of the adhesive patch, the dry adhesive was used to transport a large-area glass (47.5 x 37.5 cm(2), second-generation TFT-LCD glass), which could replace the current electrostatic transport/holding system with further optimization.

  16. Can previous acid etching increase the bond strength of a self-etching primer adhesive to enamel?

    Directory of Open Access Journals (Sweden)

    Ana Paula Morales Cobra Carvalho

    2009-06-01

    Full Text Available Because a greater research effort has been directed to analyzing the adhesive effectiveness of self etch primers to dentin, the aim of this study was to evaluate, by microtensile testing, the bond strength to enamel of a composite resin combined with a conventional adhesive system or with a self-etching primer adhesive, used according to its original prescription or used with previous acid etching. Thirty bovine teeth were divided into 3 groups with 10 teeth each (n= 10. In one of the groups, a self-etching primer (Clearfil SE Bond - Kuraray was applied in accordance with the manufacturer's instructions and, in the other, it was applied after previous acid etching. In the third group, a conventional adhesive system (Scotchbond Multipurpose Plus - 3M-ESPE was applied in accordance with the manufacturer's instructions. The results obtained by analysis of variance revealed significant differences between the adhesive systems (F = 22.31. The self-etching primer (Clearfil SE Bond presented lower enamel bond strength values than the conventional adhesive system (Scotchbond Multipurpose Plus (m = 39.70 ± 7.07 MPa both when used according to the original prescription (m = 27.81 ± 2.64 MPa and with previous acid etching (m = 25.08 ± 4.92 MPa.

  17. Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool

    Science.gov (United States)

    Karecki, Simon; Chatterjee, Ritwik; Pruette, Laura; Reif, Rafael; Sparks, Terry; Beu, Laurie; Vartanian, Victor

    2000-07-01

    In this work, a combination of two hydrofluorocarbon compounds, pentafluoroethane (FC-125, C2HF5) and 1,1-difluoroethane (FC-152a, CF2H-CH3), was evaluated as a potential replacement for perfluorocompounds in dielectric etch applications. A high aspect ratio oxide via etch was used as the test vehicle for this study, which was conducted in a commercial inductively coupled high density plasma etch tool. Both process and emissions data were collected and compared to those provided by a process utilizing a standard perfluorinated etch chemistry (C2F6). Global warming (CF4, C2F6, CHF3) and hygroscopic gas (HF, SiF4) emissions were characterized using Fourier transform infrared (FTIR) spectroscopy. FC-125/FC-152a was found to produce significant reductions in global warming emissions, on the order of 68 to 76% relative to the reference process. Although etch stopping, caused by a high degree of polymer deposition inside the etched features, was observed, process data otherwise appeared promising for an initial study, with good resist selectivity and etch rates being achieved.

  18. An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

    Science.gov (United States)

    Geerts, Sabine; Bolette, Amandine; Seidel, Laurence; Guéders, Audrey

    2012-01-01

    Our experiment evaluated the microleakage in resin composite restorations bonded to dental tissues with different adhesive systems. 40 class V cavities were prepared on the facial and lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (root dentin). The teeth were restored with Z100 resin composite bonded with different adhesive systems: Scotchbond Multipurpose (SBMP), a 3-step Etch and Rinse adhesive, Adper Scotchbond 1 XT (SB1), a 2-step Etch and Rinse adhesive, AdheSE One (ADSE-1), a 1-step Self-Etch adhesive, and AdheSE (ADSE), a 2-step Self-Etch adhesive. Teeth were thermocycled and immersed in 50% silver nitrate solution. When both interfaces were considered, SBMP has exhibited significantly less microleakage than other adhesive systems (resp., for SB1, ADSE-1 and ADSE, P = 0.0007, P adhesives, microleakage was found greater at enamel than at dentin interfaces (for ADSE, P = 0.024 and for ADSE-1, P adhesive systems, there was no significant difference between enamel and dentin interfaces; (3) SBMP was found significantly better than other adhesives both at enamel and dentin interfaces. In our experiment Etch and Rinse adhesives remain better than Self-Etch adhesives at enamel interface. In addition, there was no statistical difference between 1-step (ADSE-1) and 2-step (ADSE) Self-Etch adhesives. PMID:22675358

  19. [Evaluation of shear bond strengths of self-etching and total-etching dental adhesives to enamel and dentin].

    Science.gov (United States)

    Yu, Ling; Liu, Jing-Ming; Wang, Xiao-Yan; Gao, Xue-Jun

    2009-03-01

    To evaluate the shear bond strengths of four dental adhesives in vitro. The facial surfaces of 20 human maxillary incisors were prepared to expose fresh enamel and randomly divided into four groups, in each group 5 teeth were bonded with one adhesives: group A (Clearfil Protect Bond, self-etching two steps), group B (Adper( Prompt, self-etching one step), group C (SwissTEC SL Bond, total-etching two steps), group D (Single Bond, total-etching two steps). Shear bond strengths were determined using an universal testing machine after being stored in distilled water for 24 h at 37 degrees C. The bond strengths to enamel and dentin were (25.33 +/- 2.84) and (26.07 +/- 5.56) MPa in group A, (17.08 +/- 5.13) and (17.93 +/- 4.70) MPa in group B, (33.14 +/- 6.05) and (41.92 +/- 6.25) MPa in group C, (22.51 +/- 6.25) and (21.45 +/- 7.34) MPa in group D. Group C showed the highest and group B the lowest shear bond strength to enamel and dentin among the four groups. The two-step self-etching adhesive showed comparable shear bond strength to some of the total-etching adhesives and higher shear bond strength than one-step self-etching adhesive.

  20. What Is Dry Eye?

    Medline Plus

    Full Text Available ... Ophthalmology/Strabismus Ocular Pathology/Oncology Oculoplastics/Orbit Refractive Management/Intervention Retina/Vitreous Uveitis Focus On ... Dry Eye Sections What Is Dry Eye? Dry Eye Symptoms Causes of ...

  1. Deeply infiltrating endometriosis: Evaluation of retro-cervical space on MRI after vaginal opacification

    International Nuclear Information System (INIS)

    Fiaschetti, Valeria; Crusco, Sonia; Meschini, Alessandro; Cama, Valentina; Di Vito, Livio; Marziali, Massimiliano; Piccione, Emilio; Calabria, Ferdinando; Simonetti, Giovanni

    2012-01-01

    Objectives: To prospectively investigate diagnostic value and tolerability of MRI after intra-vaginal gel opacification for diagnosis and preoperative assessment of deeply infiltrating endometriosis. Methods: Sixty-three women with clinical suspicion of deeply infiltrating endometriosis were previously examined with trans-vaginal ultrasonography and then with MRI pre and post administration of vaginal gel. We evaluated the tolerability of this procedure with a scoring scale from 0 to 3. We also assessed with a score from 1 to 4 the visibility of four regions: Douglas-pouch, utero-sacral-ligaments, posterior-vaginal-fornix and recto-vaginal-septum. All patients underwent laparoscopic surgery after MRI. Results: Five patients considered procedure intolerable. Visibility of utero-sacral-ligaments and posterior-vaginal-fornix showed to be increased with gel (p < 0.001). In 57 out of 80 patients the MRI has allowed us to diagnose deeply infiltrating endometriosis. Overall, the percentages of MRI-sensitivity, specificity, positive predictive value and negative predictive value were respectively 67.8%, 95.3%, 89.4 and 83.5% without gel, and 90.8%, 94.6%, 90.8% and 94.6% with gel; trans-vaginal ultrasonography sensitivity, specificity, positive predictive value and negative predictive value were 57.5%, 96.6%, 90.9% and 79.5%. In evaluation of utero-sacral-ligaments trans-vaginal ultrasonography, MRI without gel and with gel sensitivity was respectively 61.9%, 47.6% and 81%; for recto-vaginal-septum these values were 12.5%, 68.7% and 93.7%; for pouch of Douglas 82%, 87% and 97.4%; finally for posterior-vaginal-fornix 27.3%, 36.4% and 81.8%. Conclusions: MRI with gel opacification of vagina should be recommended for suspicion of deep infiltrating endometriosis, in particular for the added value in evaluation of recto-vaginal septum, utero-sacral ligaments and posterior vaginal fornix.

  2. Deeply infiltrating endometriosis: Evaluation of retro-cervical space on MRI after vaginal opacification

    Energy Technology Data Exchange (ETDEWEB)

    Fiaschetti, Valeria; Crusco, Sonia [Department of Diagnostic and Molecular Imaging, Interventional Radiology and Radiotherapy, Fondazione Policlinico ' Tor Vergata' , Viale Oxford 81, Rome (Italy); Meschini, Alessandro, E-mail: a.mesko@libero.it [Department of Diagnostic and Molecular Imaging, Interventional Radiology and Radiotherapy, Fondazione Policlinico ' Tor Vergata' , Viale Oxford 81, Rome (Italy); Cama, Valentina; Di Vito, Livio [Department of Diagnostic and Molecular Imaging, Interventional Radiology and Radiotherapy, Fondazione Policlinico ' Tor Vergata' , Viale Oxford 81, Rome (Italy); Marziali, Massimiliano; Piccione, Emilio [Department of Gynecology and Obstetrics, Fondazione Policlinico ' Tor Vergata' , Viale Oxford 81, Rome (Italy); Calabria, Ferdinando [Department of Nuclear Medicine and Diagnostic Imaging, IRCCS Neuromed, Pozzilli (Italy); Simonetti, Giovanni [Department of Diagnostic and Molecular Imaging, Interventional Radiology and Radiotherapy, Fondazione Policlinico ' Tor Vergata' , Viale Oxford 81, Rome (Italy)

    2012-11-15

    Objectives: To prospectively investigate diagnostic value and tolerability of MRI after intra-vaginal gel opacification for diagnosis and preoperative assessment of deeply infiltrating endometriosis. Methods: Sixty-three women with clinical suspicion of deeply infiltrating endometriosis were previously examined with trans-vaginal ultrasonography and then with MRI pre and post administration of vaginal gel. We evaluated the tolerability of this procedure with a scoring scale from 0 to 3. We also assessed with a score from 1 to 4 the visibility of four regions: Douglas-pouch, utero-sacral-ligaments, posterior-vaginal-fornix and recto-vaginal-septum. All patients underwent laparoscopic surgery after MRI. Results: Five patients considered procedure intolerable. Visibility of utero-sacral-ligaments and posterior-vaginal-fornix showed to be increased with gel (p < 0.001). In 57 out of 80 patients the MRI has allowed us to diagnose deeply infiltrating endometriosis. Overall, the percentages of MRI-sensitivity, specificity, positive predictive value and negative predictive value were respectively 67.8%, 95.3%, 89.4 and 83.5% without gel, and 90.8%, 94.6%, 90.8% and 94.6% with gel; trans-vaginal ultrasonography sensitivity, specificity, positive predictive value and negative predictive value were 57.5%, 96.6%, 90.9% and 79.5%. In evaluation of utero-sacral-ligaments trans-vaginal ultrasonography, MRI without gel and with gel sensitivity was respectively 61.9%, 47.6% and 81%; for recto-vaginal-septum these values were 12.5%, 68.7% and 93.7%; for pouch of Douglas 82%, 87% and 97.4%; finally for posterior-vaginal-fornix 27.3%, 36.4% and 81.8%. Conclusions: MRI with gel opacification of vagina should be recommended for suspicion of deep infiltrating endometriosis, in particular for the added value in evaluation of recto-vaginal septum, utero-sacral ligaments and posterior vaginal fornix.

  3. Spatially-Resolved Ion Trajectory Measurements During Cl2 Reactive Ion Beam Etching and Ar Ion Beam Etching

    International Nuclear Information System (INIS)

    Vawter, G. Allen; Woodworth, Joseph R.; Zubrzycki, Walter J.

    1999-01-01

    The angle of ion incidence at the etched wafer location during RIBE and IBE using Cl 2 , Ar and O 2 ion beams has been characterized using an ion energy and angle analyzer. Effects of beam current and accelerator grid bias on beam divergence and the spatial uniformity of the spread of incident angles are measured. It is observed that increased total beam current can lead to reduced current density at the sample stage due to enhanced beam divergence at high currents. Results are related to preferred etch system design for uniform high-aspect-ratio etching across semiconductor wafers

  4. Single-Run Single-Mask Inductively-Coupled-Plasma Reactive-Ion-Etching Process for Fabricating Suspended High-Aspect-Ratio Microstructures

    Science.gov (United States)

    Yang, Yao-Joe; Kuo, Wen-Cheng; Fan, Kuang-Chao

    2006-01-01

    In this work, we present a single-run single-mask (SRM) process for fabricating suspended high-aspect-ratio structures on standard silicon wafers using an inductively coupled plasma-reactive ion etching (ICP-RIE) etcher. This process eliminates extra fabrication steps which are required for structure release after trench etching. Released microstructures with 120 μm thickness are obtained by this process. The corresponding maximum aspect ratio of the trench is 28. The SRM process is an extended version of the standard process proposed by BOSCH GmbH (BOSCH process). The first step of the SRM process is a standard BOSCH process for trench etching, then a polymer layer is deposited on trench sidewalls as a protective layer for the subsequent structure-releasing step. The structure is released by dry isotropic etching after the polymer layer on the trench floor is removed. All the steps can be integrated into a single-run ICP process. Also, only one mask is required. Therefore, the process complexity and fabrication cost can be effectively reduced. Discussions on each SRM step and considerations for avoiding undesired etching of the silicon structures during the release process are also presented.

  5. Bond efficacy and interface morphology of self-etching adhesives to ground enamel

    NARCIS (Netherlands)

    Abdalla, A.I.; El Zohairy, A.A.; Mohsen, M.M.A.; Feilzer, A.J.

    2010-01-01

    Purpose: This study compared the microshear bond strengths to ground enamel of three one-step self-etching adhesive systems, a self-etching primer system and an etch-and-rinse adhesive system. Materials and Methods: Three self-etching adhesives, Futurabond DC (Voco), Clearfil S Tri Bond (Kuraray)

  6. Electronegativity-dependent tin etching from thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pachecka, M., E-mail: m.pachecka@utwente.nl; Sturm, J. M.; Kruijs, R. W. E. van de; Lee, C. J.; Bijkerk, F. [Industrial Focus Group XUV Optics, MESA+ Institute for Nanotechnology, University of Twente, Drienerlolaan 5, Enschede (Netherlands)

    2016-07-15

    The influence of a thin film substrate material on the etching of a thin layer of deposited tin (Sn) by hydrogen radicals was studied. The amount of remaining Sn was quantified for materials that cover a range of electronegativities. We show that, for metals, etching depends on the relative electronegativity of the surface material and Sn. Tin is chemically etched from surfaces with an electronegativity smaller than Sn, while incomplete Sn etching is observed for materials with an electronegativity larger than Sn. Furthermore, the amount of remaining Sn increases as the electronegativity of the surface material increases. We speculate, that, due to Fermi level differences in the material’s electronic structure, the energy of the two conduction bands shift such that the availability of electrons for binding with hydrogen is significantly reduced.

  7. Summary of Chalcogenide Glass Processing: Wet-Etching and Photolithography

    Energy Technology Data Exchange (ETDEWEB)

    Riley, Brian J.; Sundaram, S. K.; Johnson, Bradley R.; Saraf, Laxmikant V.

    2006-12-01

    This report describes a study designed to explore the different properties of two different chalcogenide materials, As2S3 and As24S38Se38, when subjected to photolithographic wet-etching techniques. Chalcogenide glasses are made by combining chalcogen elements S, Se, and Te with Group IV and/or V elements. The etchant was selected from the literature and was composed of sodium hydroxide, isopropyl alcohol, and deionized water and the types of chalcogenide glass for study were As2S3 and As24S38Se38. The main goals here were to obtain a single variable etch rate curve of etch depth per time versus NaOH overall solution concentration in M and to see the difference in etch rate between a given etchant when used on the different chalcogenide stoichiometries. Upon completion of these two goals, future studies will begin to explore creating complex, integrated photonic devices via these methods.

  8. Dynamic Wet Etching of Silicon through Isopropanol Alcohol Evaporation

    Directory of Open Access Journals (Sweden)

    Tiago S. Monteiro

    2015-10-01

    Full Text Available In this paper, Isopropanol (IPA availability during the anisotropic etching of silicon in Potassium Hydroxide (KOH solutions was investigated. Squares of 8 to 40 µm were patterned to (100 oriented silicon wafers through DWL (Direct Writing Laser photolithography. The wet etching process was performed inside an open HDPE (High Density Polyethylene flask with ultrasonic agitation. IPA volume and evaporation was studied in a dynamic etching process, and subsequent influence on the silicon etching was inspected. For the tested conditions, evaporation rates for water vapor and IPA were determined as approximately 0.0417 mL/min and 0.175 mL/min, respectively. Results demonstrate that IPA availability, and not concentration, plays an important role in the definition of the final structure. Transversal SEM (Scanning Electron Microscopy analysis demonstrates a correlation between microloading effects (as a consequence of structure spacing and the angle formed towards the (100 plane.

  9. Etching properties of BLT films in CF4/Ar plasma

    International Nuclear Information System (INIS)

    Kim, Dong Pyo; Kim, Kyoung Tae; Kim, Chang Il

    2003-01-01

    CF 4 /Ar plasma mass content and etching rate behavior of BLT thin films were investigated in inductively coupled plasma (ICP) reactor as functions of CF 4 /Ar gas mixing ratio, rf power, and dc bias voltage. The variation of relative volume densities for F and Ar atoms were measured by the optical emission spectroscopy (OES). The etching rate as functions of Ar content showed the maximum of 803 A/min at 80 % Ar addition into CF 4 plasma. The presence of maximum etch rate may be explained by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction. The role of Ar ion bombardment includes destruction of metal (Bi, La, Ti)-O bonds as well as support of chemical reaction of metals with fluorine atoms

  10. What's new in dentine bonding? Self-etch adhesives.

    Science.gov (United States)

    Burke, F J Trevor

    2004-12-01

    Bonding to dentine is an integral part of contemporary restorative dentistry, but early systems were not user-friendly. The introduction of new systems which have a reduced number of steps--the self-etch adhesives--could therefore be an advantage to clinicians, provided that they are as effective as previous adhesives. These new self-etch materials appear to form hybrid layers as did the previous generation of materials. However, there is a need for further clinical research on these new materials. Advantages of self-etch systems include, no need to etch and rinse, reduced post-operative sensitivity and low technique sensitivity. Disadvantages include, the inhibition of set of self- or dual-cure resin materials and the need to roughen untreated enamel surfaces prior to bonding.

  11. In situ ion etching in a scanning electron microscope

    International Nuclear Information System (INIS)

    Dhariwal, R.S.; Fitch, R.K.

    1977-01-01

    A facility for ion etching in a scanning electron microscope is described which incorporates a new type of electrostatic ion source and viewing of the specimen is possible within about 30 sec after terminating the ion bombardment. Artefacts produced during etching have been studied and cone formation has been followed during its growth. The instrument has provided useful structural information on metals, alloys, and sinters. However, although insulating materials, such as plastics, glass and resins, have been successfully etched, interpretation of the resultant micrographs is more difficult. Ion etching of soft biological tissues, such as the rat duodenum was found to be of considerable interest. The observed structural features arise from the selective intake of the heavy fixation elements by different parts of the tissue. Hard biological materials, such as dental tissues and restorative materials, have also been studied and the prismatic structure of the enamel and the form and distribution of the dentinal tubules have been revealed. (author)

  12. Impact of electron irradiation on particle track etching response in ...

    Indian Academy of Sciences (India)

    energy by an ionizing particle traversing a material medium. When the ... Their amorphous nature and radiation sensitivity further ... The samples were washed thoroughly in lukewarm soap solution to avoid non-uniformity in etching due to ...

  13. GaN Nanowires Synthesized by Electroless Etching Method

    KAUST Repository

    Najar, Adel; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.; Ben Slimane, Ahmed

    2012-01-01

    Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

  14. Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

    International Nuclear Information System (INIS)

    Wang, Q.; Gu, C.Z.; Li, J.J.; Wang, Z.L.; Shi, C.Y.; Xu, P.; Zhu, K.; Liu, Y.L.

    2005-01-01

    Porous silicon (PS) was etched by hydrogen plasma. On the surface a large number of silicon nanocone arrays and nanocrystallites were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced. Correspondingly, three emission centers including red, green, and blue emissions are shown to contribute to the enhanced photoluminescence of the H-etched PS, which originate from the recombination of trapped electrons with free holes due to Si=O bonding at the surface of the silicon nanocrystallites, the quantum size confinement effect, and oxygen vacancy in the surface SiO 2 layer, respectively. In particular, the increase of SiO x (x<2) formed on the surface of the H-etched porous silicon plays a very important role in enhancing the photoluminescence properties

  15. Erbium doped stain etched porous silicon

    International Nuclear Information System (INIS)

    Gonzalez-Diaz, B.; Diaz-Herrera, B.; Guerrero-Lemus, R.; Mendez-Ramos, J.; Rodriguez, V.D.; Hernandez-Rodriguez, C.; Martinez-Duart, J.M.

    2008-01-01

    In this work a simple erbium doping process applied to stain etched porous silicon layers (PSLs) is proposed. This doping process has been developed for application in porous silicon solar cells, where conventional erbium doping processes are not affordable because of the high processing cost and technical difficulties. The PSLs were formed by immersion in a HF/HNO 3 solution to properly adjust the porosity and pore thickness to an optimal doping of the porous structure. After the formation of the porous structure, the PSLs were analyzed by means of nitrogen BET (Brunauer, Emmett and Teller) area measurements and scanning electron microscopy. Subsequently, the PSLs were immersed in a saturated erbium nitrate solution in order to cover the porous surface. Then, the samples were subjected to a thermal process to activate the Er 3+ ions. Different temperatures and annealing times were used in this process. The photoluminescence of the PSLs was evaluated before and after the doping processes and the composition was analyzed by Fourier transform IR spectroscopy

  16. More accurate X-ray scattering data of deeply supercooled bulk liquid water

    Energy Technology Data Exchange (ETDEWEB)

    Neuefeind, Joerg C [ORNL; Benmore, Chris J [Argonne National Laboratory (ANL); Weber, Richard [Argonne National Laboratory (ANL); Paschek, Dietmar [Rostock University, Rostock, Germany

    2011-01-01

    Deeply supercooled water droplets held container-less in an acoustic levitator are investigated with high energy X-ray scattering. The temperature dependence X-ray structure function is found to be non-linear. Comparison with two popular computer models reveals that structural changes are predicted too abrupt by the TIP5P model, while the rate of change predicted by TIP4P is in much better agreement with experiment. The abrupt structural changes predicted by the TIP5P model to occur in the temperature range between 260-240K as water approaches the homogeneous nucleation limit are unrealistic. Both models underestimate the distance between neighbouring oxygen atoms and overestimate the sharpness of the OO distance distribution, indicating that the strength of the H-bond is overestimated in these models.

  17. Beam-helicity asymmetry arising from deeply virtual Compton scattering measured with kinematically complete event reconstruction

    Energy Technology Data Exchange (ETDEWEB)

    Airapetian, A. [Giessen Univ. (Germany). Physikalisches Inst.; Michigan Univ., Ann Arbor, MI (United States). Randall Lab. of Physics; Akopov, N. [Yerevan Physics Inst. (Armenia); Akopov, Z. [DESY, Hamburg (DE)] (and others)

    2012-06-15

    The beam-helicity asymmetry in exclusive electroproduction of real photons by the longitudinally polarized HERA positron beam scattering off an unpolarized hydrogen target is measured at HERMES. The asymmetry arises from deeply virtual Compton scattering and its interference with the Bethe-Heitler process. Azimuthal amplitudes of the beam-helicity asymmetry are extracted from a data sample consisting of ep{yields}ep{gamma} events with detection of all particles in the final state including the recoiling proton. The installation of a recoil detector, while reducing the acceptance of the experiment, allows the elimination of resonant background that was estimated to contribute an average of about 12% to the signal in previous HERMES publications. The removal of the resonant background from the present data sample is shown to increase the magnitude of the leading asymmetry amplitude by 0.054{+-}0.016 to -0.328{+-}0.027(stat.){+-}0.045(syst.).

  18. Beam-helicity asymmetry arising from deeply virtual Compton scattering measured with kinematically complete event reconstruction

    International Nuclear Information System (INIS)

    Airapetian, A.; Akopov, Z.

    2012-06-01

    The beam-helicity asymmetry in exclusive electroproduction of real photons by the longitudinally polarized HERA positron beam scattering off an unpolarized hydrogen target is measured at HERMES. The asymmetry arises from deeply virtual Compton scattering and its interference with the Bethe-Heitler process. Azimuthal amplitudes of the beam-helicity asymmetry are extracted from a data sample consisting of ep→epγ events with detection of all particles in the final state including the recoiling proton. The installation of a recoil detector, while reducing the acceptance of the experiment, allows the elimination of resonant background that was estimated to contribute an average of about 12% to the signal in previous HERMES publications. The removal of the resonant background from the present data sample is shown to increase the magnitude of the leading asymmetry amplitude by 0.054±0.016 to -0.328±0.027(stat.)±0.045(syst.).

  19. Study on vertical seismic response characteristics of deeply embedded reactor building

    International Nuclear Information System (INIS)

    Morishita, H.; Nakamura, N.; Uchiyama, S.; Fukuoka, A.; Ishizaki, M.

    1993-01-01

    This paper describes vertical response characteristics, especially effects of embedment, and analytical methods for seismic design of a deeply embedded reactor building. The influence of embedment on vertical response was found to be minimal by evaluating results of forced vibration tests of a reactor building model and performing simplified analyses. Subsequently, simulation analyses of the forced vibration test and actual earthquake induced response were performed using both the axisymmetric FEM model and the simplified mass and spring model. It was concluded that the analytical models taking the embedment into the consideration closely simulated the observation records, and the omission of embedment in the analyses tended to increase the predicted response which was conservative in respect an actual design consideration. (author)

  20. Deeply virtual Compton scattering in the Hall A of Jefferson laboratory

    International Nuclear Information System (INIS)

    Munoz Camacho, C.

    2005-12-01

    Generalized Parton Distributions (GPDs), introduced in the late 90's, provide a universal description of hadrons in terms of the underlying degrees of freedom of Quantum Chromodynamics: quarks and gluons. GPDs appear in a wide variety of hard exclusive reactions and the advent of high luminosity accelerator facilities has made the study of GPDs accessible to experiment. Deeply Virtual Compton Scattering (DVCS) is the golden process involving GPDs. The first dedicated DVCS experiment ran in the Hall A of Jefferson Lab in Fall 2004. An electromagnetic calorimeter and a plastic scintillator detector were constructed for this experiment, together with specific electronics and acquisition system. The experiment preparation, data taking and analysis are described in this document. Results on the absolute cross section difference for opposite beam helicities provide the first measurement of a linear combination of GPDs as a function of the momentum transfer to the nucleon. (author)

  1. Extraction of Generalized Parton Distributions from combined Deeply Virtual Compton Scattering and Timelike Compton scattering fits

    Science.gov (United States)

    Boer, Marie

    2017-09-01

    Generalized Parton Distributions (GPDs) contain the correlation between the parton's longitudinal momentum and their transverse distribution. They are accessed through hard exclusive processes, such as Deeply Virtual Compton Scattering (DVCS). DVCS has already been measured in several experiments and several models allow for extracting GPDs from these measurements. Timelike Compton Scattering (TCS) is, at leading order, the time-reversal equivalent process to DVCS and accesses GPDs at the same kinematics. Comparing GPDs extracted from DVCS and TCS is a unique way for proving GPD universality. Combining fits from the two processes will also allow for better constraining the GPDs. We will present our method for extracting GPDs from DVCS and TCS pseudo-data. We will compare fit results from the two processes in similar conditions and present what can be expected in term of contraints on GPDs from combined fits.

  2. Sapphire implant based neuro-complex for deep-lying brain tumors phototheranostics

    Science.gov (United States)

    Sharova, A. S.; Maklygina, YU S.; Yusubalieva, G. M.; Shikunova, I. A.; Kurlov, V. N.; Loschenov, V. B.

    2018-01-01

    The neuro-complex as a combination of sapphire implant optical port and osteoplastic biomaterial "Collapan" as an Aluminum phthalocyanine nanoform photosensitizer (PS) depot was developed within the framework of this study. The main goals of such neuro-complex are to provide direct access of laser radiation to the brain tissue depth and to transfer PS directly to the pathological tissue location that will allow multiple optical phototheranostics of the deep-lying tumor region without repeated surgical intervention. The developed complex spectral-optical properties research was carried out by photodiagnostics method using the model sample: a brain tissue phantom. The optical transparency of sapphire implant allows obtaining a fluorescent signal with high accuracy, comparable to direct measurement "in contact" with the tissue.

  3. Pristine Early Eocene wood buried deeply in kimberlite from northern Canada.

    Science.gov (United States)

    Wolfe, Alexander P; Csank, Adam Z; Reyes, Alberto V; McKellar, Ryan C; Tappert, Ralf; Muehlenbachs, Karlis

    2012-01-01

    We report exceptional preservation of fossil wood buried deeply in a kimberlite pipe that intruded northwestern Canada's Slave Province 53.3±0.6 million years ago (Ma), revealed during excavation of diamond source rock. The wood originated from forest surrounding the eruption zone and collapsed into the diatreme before resettling in volcaniclastic kimberlite to depths >300 m, where it was mummified in a sterile environment. Anatomy of the unpermineralized wood permits conclusive identification to the genus Metasequoia (Cupressaceae). The wood yields genuine cellulose and occluded amber, both of which have been characterized spectroscopically and isotopically. From cellulose δ(18)O and δ(2)H measurements, we infer that Early Eocene paleoclimates in the western Canadian subarctic were 12-17°C warmer and four times wetter than present. Canadian kimberlites offer Lagerstätte-quality preservation of wood from a region with limited alternate sources of paleobotanical information.

  4. Pristine Early Eocene wood buried deeply in kimberlite from northern Canada.

    Directory of Open Access Journals (Sweden)

    Alexander P Wolfe

    Full Text Available We report exceptional preservation of fossil wood buried deeply in a kimberlite pipe that intruded northwestern Canada's Slave Province 53.3±0.6 million years ago (Ma, revealed during excavation of diamond source rock. The wood originated from forest surrounding the eruption zone and collapsed into the diatreme before resettling in volcaniclastic kimberlite to depths >300 m, where it was mummified in a sterile environment. Anatomy of the unpermineralized wood permits conclusive identification to the genus Metasequoia (Cupressaceae. The wood yields genuine cellulose and occluded amber, both of which have been characterized spectroscopically and isotopically. From cellulose δ(18O and δ(2H measurements, we infer that Early Eocene paleoclimates in the western Canadian subarctic were 12-17°C warmer and four times wetter than present. Canadian kimberlites offer Lagerstätte-quality preservation of wood from a region with limited alternate sources of paleobotanical information.

  5. High energy deeply virtual Compton scattering on a photon and related meson exclusive production

    International Nuclear Information System (INIS)

    Machado, Magno V. T.

    2007-01-01

    In this work we estimate the differential cross section for the high energy deeply virtual Compton scattering on a photon target, γ*γ→γγ, within the QCD dipole-dipole scattering formalism. For the phenomenology, a saturation model for the dipole-dipole cross section for two photon scattering is considered. Its robustness is supported by a good description of current accelerator data. In addition, we consider the related exclusive vector meson production processes, γ*γ→Vγ. This analysis is focused on the light ρ and φ meson production, which produces larger cross sections. The phenomenological results are compared with the theoretical calculation using the color-dipole Balitsky-Fadin-Kuraev-Lipatov approach

  6. Relaxation phenomena in and microscopic transport theories of deeply inelastic collisions between heavy ions

    International Nuclear Information System (INIS)

    Noerenberg, W.

    1976-01-01

    Relaxation phenomena in deeply inelastic collisions are qualitatively discussed and compared with precompound reactions. Different approaches for describing these processes are reviewed, in particular the microscopic transport theories, which can be understood from a generalized master equation for macroscopic variables. The Markoff approximation and the classical limit for the relative motion lead to two coupled equations, the classical equation of relative motion with friction and a Pauli master equation for the internal degrees of freedom. The master equation approximated by the corresponding Fokker-Planck equation for mass transfer and energy dissipation is discussed in detail. Simple analytic expressions are derived for the transport coefficients as functions of excitation energy, total mass, mass fragmentation and relative angular momentum. Calculated transport coefficients are compared with experimental values. Problems and future developments in microscopic transport theories are outlined. (orig.) [de

  7. A glimpse of gluons through deeply virtual compton scattering on the proton.

    Science.gov (United States)

    Defurne, M; Jiménez-Argüello, A Martí; Ahmed, Z; Albataineh, H; Allada, K; Aniol, K A; Bellini, V; Benali, M; Boeglin, W; Bertin, P; Brossard, M; Camsonne, A; Canan, M; Chandavar, S; Chen, C; Chen, J-P; de Jager, C W; de Leo, R; Desnault, C; Deur, A; El Fassi, L; Ent, R; Flay, D; Friend, M; Fuchey, E; Frullani, S; Garibaldi, F; Gaskell, D; Giusa, A; Glamazdin, O; Golge, S; Gomez, J; Hansen, O; Higinbotham, D; Holmstrom, T; Horn, T; Huang, J; Huang, M; Hyde, C E; Iqbal, S; Itard, F; Kang, H; Kelleher, A; Keppel, C; Koirala, S; Korover, I; LeRose, J J; Lindgren, R; Long, E; Magne, M; Mammei, J; Margaziotis, D J; Markowitz, P; Mazouz, M; Meddi, F; Meekins, D; Michaels, R; Mihovilovic, M; Camacho, C Muñoz; Nadel-Turonski, P; Nuruzzaman, N; Paremuzyan, R; Puckett, A; Punjabi, V; Qiang, Y; Rakhman, A; Rashad, M N H; Riordan, S; Roche, J; Russo, G; Sabatié, F; Saenboonruang, K; Saha, A; Sawatzky, B; Selvy, L; Shahinyan, A; Sirca, S; Solvignon, P; Sperduto, M L; Subedi, R; Sulkosky, V; Sutera, C; Tobias, W A; Urciuoli, G M; Wang, D; Wojtsekhowski, B; Yao, H; Ye, Z; Zhan, X; Zhang, J; Zhao, B; Zhao, Z; Zheng, X; Zhu, P

    2017-11-10

    The internal structure of nucleons (protons and neutrons) remains one of the greatest outstanding problems in modern nuclear physics. By scattering high-energy electrons off a proton we are able to resolve its fundamental constituents and probe their momenta and positions. Here we investigate the dynamics of quarks and gluons inside nucleons using deeply virtual Compton scattering (DVCS)-a highly virtual photon scatters off the proton, which subsequently radiates a photon. DVCS interferes with the Bethe-Heitler (BH) process, where the photon is emitted by the electron rather than the proton. We report herein the full determination of the BH-DVCS interference by exploiting the distinct energy dependences of the DVCS and BH amplitudes. In the regime where the scattering is expected to occur off a single quark, measurements show an intriguing sensitivity to gluons, the carriers of the strong interaction.

  8. Measurement of deeply virtual Compton scattering and its t-dependence at HERA

    Science.gov (United States)

    H1 Collaboration; Aaron, F. D.; Aktas, A.; Alexa, C.; Andreev, V.; Antunovic, B.; Aplin, S.; Asmone, A.; Astvatsatourov, A.; Backovic, S.; Baghdasaryan, A.; Baranov, P.; Barrelet, E.; Bartel, W.; Baudrand, S.; Beckingham, M.; Begzsuren, K.; Behnke, O.; Behrendt, O.; Belousov, A.; Berger, N.; Bizot, J. C.; Boenig, M.-O.; Boudry, V.; Bozovic-Jelisavcic, I.; Bracinik, J.; Brandt, G.; Brinkmann, M.; Brisson, V.; Bruncko, D.; Büsser, F. W.; Bunyatyan, A.; Buschhorn, G.; Bystritskaya, L.; Campbell, A. J.; Cantun Avila, K. B.; Cassol-Brunner, F.; Cerny, K.; Cerny, V.; Chekelian, V.; Cholewa, A.; Contreras, J. G.; Coughlan, J. A.; Cozzika, G.; Cvach, J.; Dainton, J. B.; Daum, K.; Deak, M.; de Boer, Y.; Delcourt, B.; Del Degan, M.; Delvax, J.; de Roeck, A.; de Wolf, E. A.; Diaconu, C.; Dodonov, V.; Dossanov, A.; Dubak, A.; Eckerlin, G.; Efremenko, V.; Egli, S.; Eichler, R.; Eisele, F.; Eliseev, A.; Elsen, E.; Essenov, S.; Falkiewicz, A.; Faulkner, P. J. W.; Favart, L.; Fedotov, A.; Felst, R.; Feltesse, J.; Ferencei, J.; Finke, L.; Fleischer, M.; Fomenko, A.; Franke, G.; Frisson, T.; Gabathuler, E.; Gayler, J.; Ghazaryan, S.; Glazov, A.; Glushkov, I.; Goerlich, L.; Goettlich, M.; Gogitidze, N.; Gorbounov, S.; Gouzevitch, M.; Grab, C.; Greenshaw, T.; Grell, B. R.; Grindhammer, G.; Habib, S.; Haidt, D.; Hansson, M.; Heinzelmann, G.; Helebrant, C.; Henderson, R. C. W.; Henschel, H.; Herrera, G.; Hildebrandt, M.; Hiller, K. H.; Hoffmann, D.; Horisberger, R.; Hovhannisyan, A.; Hreus, T.; Jacquet, M.; Janssen, M. E.; Janssen, X.; Jemanov, V.; Jönsson, L.; Johnson, D. P.; Jung, A. W.; Jung, H.; Kapichine, M.; Katzy, J.; Kenyon, I. R.; Kiesling, C.; Klein, M.; Kleinwort, C.; Klimkovich, T.; Kluge, T.; Knutsson, A.; Kogler, R.; Korbel, V.; Kostka, P.; Kraemer, M.; Krastev, K.; Kretzschmar, J.; Kropivnitskaya, A.; Krüger, K.; Kutak, K.; Landon, M. P. J.; Lange, W.; Laštovička-Medin, G.; Laycock, P.; Lebedev, A.; Leibenguth, G.; Lendermann, V.; Levonian, S.; Li, G.; Lindfeld, L.; Lipka, K.; Liptaj, A.; List, B.; List, J.; Loktionova, N.; Lopez-Fernandez, R.; Lubimov, V.; Lucaci-Timoce, A.-I.; Lytkin, L.; Makankine, A.; Malinovski, E.; Marage, P.; Marti, Ll.; Martyn, H.-U.; Maxfield, S. J.; Mehta, A.; Meier, K.; Meyer, A. B.; Meyer, H.; Meyer, H.; Meyer, J.; Michels, V.; Mikocki, S.; Milcewicz-Mika, I.; Mohamed, A.; Moreau, F.; Morozov, A.; Morris, J. V.; Mozer, M. U.; Mudrinic, M.; Müller, K.; Murín, P.; Nankov, K.; Naroska, B.; Naumann, Th.; Newman, P. R.; Niebuhr, C.; Nikiforov, A.; Nowak, G.; Nowak, K.; Nozicka, M.; Olivier, B.; Olsson, J. E.; Osman, S.; Ozerov, D.; Palichik, V.; Panagoulias, I.; Pandurovic, M.; Papadopoulou, Th.; Pascaud, C.; Patel, G. D.; Peng, H.; Perez, E.; Perez-Astudillo, D.; Perieanu, A.; Petrukhin, A.; Picuric, I.; Piec, S.; Pitzl, D.; Plačakytė, R.; Polifka, R.; Povh, B.; Preda, T.; Prideaux, P.; Radescu, V.; Rahmat, A. J.; Raicevic, N.; Raspiareza, A.; Ravdandorj, T.; Reimer, P.; Risler, C.; Rizvi, E.; Robmann, P.; Roland, B.; Roosen, R.; Rostovtsev, A.; Rurikova, Z.; Rusakov, S.; Salek, D.; Salvaire, F.; Sankey, D. P. C.; Sauter, M.; Sauvan, E.; Schmidt, S.; Schmitt, S.; Schmitz, C.; Schoeffel, L.; Schöning, A.; Schultz-Coulon, H.-C.; Sefkow, F.; Shaw-West, R. N.; Sheviakov, I.; Shtarkov, L. N.; Sloan, T.; Smiljanic, I.; Smirnov, P.; Soloviev, Y.; South, D.; Spaskov, V.; Specka, A.; Staykova, Z.; Steder, M.; Stella, B.; Stiewe, J.; Straumann, U.; Sunar, D.; Sykora, T.; Tchoulakov, V.; Thompson, G.; Thompson, P. D.; Toll, T.; Tomasz, F.; Tran, T. H.; Traynor, D.; Trinh, T. N.; Truöl, P.; Tsakov, I.; Tseepeldorj, B.; Tsurin, I.; Turnau, J.; Tzamariudaki, E.; Urban, K.; Valkárová, A.; Vallée, C.; van Mechelen, P.; Vargas Trevino, A.; Vazdik, Y.; Vinokurova, S.; Volchinski, V.; Weber, G.; Weber, R.; Wegener, D.; Werner, C.; Wessels, M.; Wissing, Ch.; Wolf, R.; Wünsch, E.; Yeganov, V.; Žáček, J.; Zálešák, J.; Zhang, Z.; Zhelezov, A.; Zhokin, A.; Zhu, Y. C.; Zimmermann, T.; Zohrabyan, H.; Zomer, F.

    2008-01-01

    A measurement of elastic deeply virtual Compton scattering γp→γp using ep collision data recorded with the H1 detector at HERA is presented. The analysed data sample corresponds to an integrated luminosity of 145 pb. The cross section is measured as a function of the virtuality Q of the exchanged photon and the centre-of-mass energy W of the γp system in the kinematic domain 6.5

  9. One-particle inclusive processes in deeply inelastic lepton-nucleon scattering

    CERN Document Server

    Graudenz, Dirk

    1994-01-01

    Abstract: The one-particle inclusive cross section in deeply inelastic lepton--nucleon scattering, expressed in terms of parton densities and fragmentation functions being differential in the invariant mass of the observed hadron and of the incoming nucleon, diverges if this invariant mass vanishes. This divergence can be traced back to the kinematical configuration where the parent parton of the observed hadron is emitted collinearly from the incoming parton of the QCD subprocess. By using the concept of ``fracture functions'', which has recently been introduced by Trentadue and Veneziano, it is possible to absorb this divergence in these new distribution functions as long as the observed hadron is not soft. This procedure allows the determination of a finite one-particle inclusive cross section in next-to-leading order QCD perturbation theory. We give details of the calculation and the explicit form of the bare fracture functions in terms of the renormalized ones.

  10. Organization of silicon nanocrystals by localized electrochemical etching

    International Nuclear Information System (INIS)

    Ayari-Kanoun, Asma; Drouin, Dominique; Beauvais, Jacques; Lysenko, Vladimir; Nychyporuk, Tetyana; Souifi, Abdelkader

    2009-01-01

    An approach to form a monolayer of organized silicon nanocrystals on a monocrystalline Si wafer is reported. Ordered arrays of nanoholes in a silicon nitride layer were obtained by combining electron beam lithography and plasma etching. Then, a short electrochemical etching current pulse led to formation of a single Si nanocrystal per each nanohole. As a result, high quality silicon nanocrystal arrays were formed with well controlled and reproducible morphologies. In future, this approach can be used to fabricate single electron devices.

  11. Quantum-size-controlled photoelectrochemical etching of semiconductor nanostructures

    Science.gov (United States)

    Fischer, Arthur J.; Tsao, Jeffrey Y.; Wierer, Jr., Jonathan J.; Xiao, Xiaoyin; Wang, George T.

    2016-03-01

    Quantum-size-controlled photoelectrochemical (QSC-PEC) etching provides a new route to the precision fabrication of epitaxial semiconductor nanostructures in the sub-10-nm size regime. For example, quantum dots (QDs) can be QSC-PEC-etched from epitaxial InGaN thin films using narrowband laser photoexcitation, and the QD sizes (and hence bandgaps and photoluminescence wavelengths) are determined by the photoexcitation wavelength.

  12. Note: Electrochemical etching of cylindrical nanoprobes using a vibrating electrolyte

    International Nuclear Information System (INIS)

    Wang, Yufeng; Zeng, Yongbin; Qu, Ningsong; Zhu, Di

    2015-01-01

    An electrochemical etching process using a vibrating electrolyte of potassium hydroxide to prepare tungsten cylindrical nanotips is developed. The vibrating electrolyte eases the effects of a diffusion layer and extends the etching area, which aid in the production of cylindrical nanotips. Larger amplitudes and a vibration frequency of 35 Hz are recommended for producing cylindrical nanotips. Nanotips with a tip radius of approximately 43 nm and a conical angle of arctan 0.0216 are obtained

  13. Energy dependence of fast neutron dosimetry using electrochemical etching

    International Nuclear Information System (INIS)

    Su, S.J.; Morgan, K.Z.

    1978-01-01

    Registration of fast-neutron induced recoil tracks by the electrochemical etching technique as applied to sensitive Lexan polycarbonate foils provides a simple and inexpensive means of fast neutron personnel dosimetry. The sensitivity (tracks/neutron) of recoil particle registration is given as a function of neutron energy. Neutrons of 7 Li (p,n) 7 Be, 3 T (d,n) 4 He and 9 B, respectively. Results are compared with other studies using other neutron sources and conventional etching method

  14. Microdroplet-etched highly birefringent low-loss fiber tapers.

    Science.gov (United States)

    Mikkelsen, Jared C; Poon, Joyce K S

    2012-07-01

    We use hydrofluoric acid microdroplets to directly etch highly birefringent biconical fiber tapers from standard single-mode fibers. The fiber tapers have micrometer-sized cross sections, which are controlled by the etching condition. The characteristic teardrop cross section leads to a high group birefringence of B(G)≈0.017 and insertion losses <0.7 dB over waist lengths of about 2.1 mm.

  15. Comparison of enamel bond fatigue durability between universal adhesives and two-step self-etch adhesives: Effect of phosphoric acid pre-etching.

    Science.gov (United States)

    Suda, Shunichi; Tsujimoto, Akimasa; Barkmeier, Wayne W; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

    2018-03-30

    The effect of phosphoric acid pre-etching on enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives was investigated. Four universal adhesives and three two-step self-etch adhesives were used. The initial shear bond strengths and shear fatigue strengths to enamel with and without phosphoric acid pre-etching using the adhesives were determined. SEM observations were also conducted. Phosphoric acid pre-etching of enamel was found to increase the bond fatigue durability of universal adhesives, but its effect on two-step self-etch adhesives was material-dependent. In addition, some universal adhesives with phosphoric acid pre-etching showed similar bond fatigue durability to the two-step self-etch adhesives, although the bond fatigue durability of universal adhesives in self-etch mode was lower than that of the two-step self-etch adhesives. Phosphoric acid pre-etching enhances enamel bond fatigue durability of universal adhesives, but the effect of phosphoric acid pre-etching on the bond fatigue durability of two-step self-etch adhesives was material-dependent.

  16. Deeply Virtual Compton Scattering off a deuterium target at the HERMES experiment

    Energy Technology Data Exchange (ETDEWEB)

    Movsisyan, Aram

    2011-05-15

    Deeply virtual Compton scattering is studied in this report, using all data collected at the HERMES experiment from 1996 to 2005. Azimuthal asymmetries with respect to beam-helicity, beam-charge and target polarization alone and also to their different combinations for hard exclusive electroproduction of real photons in deep-inelastic scattering from a both unpolarized and longitudinally polarized deuterium targets are measured. The asymmetries are attributed to the interference between the deeply virtual Compton scattering and Bethe-Heitler processes. The asymmetries are observed in the exclusive region -(1.5){sup 2} GeV{sup 2}

  17. Jet shapes in charm photoproduction and deeply inelastic scattering at HERA

    International Nuclear Information System (INIS)

    Grell, Brian Rosenvold

    2010-09-01

    This analysis investigates charm production processes in photoproduction and deeply inelastic scattering. The analysed data was collected with the H1 detector at the HERA accelerator in the years 1999-2000 for photoproduction and 2004-2007 for deeply inelastic scattering, corresponding to integrated luminosities of 83 pb -1 , respectively 348 pb -1 . Dijet events are selected with jet transverse momenta of at least 5 GeV, respectively 4 GeV, in the central rapidity region. One jet is tagged by a D * meson to be initiated by a charm quark. The other is studied with respect to its mean integrated jet shape in order to deduce to which fraction it is initiated by a quark or a gluon. The jet shape is described by the fraction ψ(r) of the jet energy inside a cone of radius r around the jet axis; it is found that for r=0:6, ψ(r) is most sensitive to differences between charm and light quark or gluon jets. The shape is measured as a function of various kinematic variables such as the jet energy and pseudorapidity, photon virtuality and x γ obs , the fraction of the photon momentum entering the hard interaction. The photoproduction data is compared to Pythia, the DIS data to RapGap Monte Carlo simulations. In the Monte Carlo calculation, direct and resolved photon processes are simulated separately to compare samples with an enriched fraction of quark, respectively gluon initiated jets. Deviations at low x γ obs are observed for higher values of Q 2 , where direct and resolved expectations are nearly identical, hinting at an overestimation of gluon initiated jets. In most regions of phase space though, the resolution of the measurement excels the difference between direct and resolved predictions, allowing a distinction of such event samples. (orig.)

  18. Jet shapes in charm photoproduction and deeply inelastic scattering at HERA

    Energy Technology Data Exchange (ETDEWEB)

    Grell, Brian Rosenvold

    2010-09-15

    This analysis investigates charm production processes in photoproduction and deeply inelastic scattering. The analysed data was collected with the H1 detector at the HERA accelerator in the years 1999-2000 for photoproduction and 2004-2007 for deeply inelastic scattering, corresponding to integrated luminosities of 83 pb{sup -1}, respectively 348 pb{sup -1}. Dijet events are selected with jet transverse momenta of at least 5 GeV, respectively 4 GeV, in the central rapidity region. One jet is tagged by a D{sup *} meson to be initiated by a charm quark. The other is studied with respect to its mean integrated jet shape in order to deduce to which fraction it is initiated by a quark or a gluon. The jet shape is described by the fraction {psi}(r) of the jet energy inside a cone of radius r around the jet axis; it is found that for r=0:6, {psi}(r) is most sensitive to differences between charm and light quark or gluon jets. The shape is measured as a function of various kinematic variables such as the jet energy and pseudorapidity, photon virtuality and x{sub {gamma}}{sup obs}, the fraction of the photon momentum entering the hard interaction. The photoproduction data is compared to Pythia, the DIS data to RapGap Monte Carlo simulations. In the Monte Carlo calculation, direct and resolved photon processes are simulated separately to compare samples with an enriched fraction of quark, respectively gluon initiated jets. Deviations at low x{sub {gamma}}{sup obs} are observed for higher values of Q{sup 2}, where direct and resolved expectations are nearly identical, hinting at an overestimation of gluon initiated jets. In most regions of phase space though, the resolution of the measurement excels the difference between direct and resolved predictions, allowing a distinction of such event samples. (orig.)

  19. Imaging of Au nanoparticles deeply buried in polymer matrix by various atomic force microscopy techniques

    International Nuclear Information System (INIS)

    Kimura, Kuniko; Kobayashi, Kei; Matsushige, Kazumi; Yamada, Hirofumi

    2013-01-01

    Recently, some papers reported successful imaging of subsurface features using atomic force microscopy (AFM). Some theoretical studies have also been presented, however the imaging mechanisms are not fully understood yet. In the preceeding papers, imaging of deeply buried nanometer-scale features has been successful only if they were buried in a soft matrix. In this paper, subsurface features (Au nanoparticles) buried in a soft polymer matrix were visualized. To elucidate the imaging mechanisms, various AFM techniques; heterodyne force microscopy, ultrasonic atomic force microscopy (UAFM), 2nd-harmonic UAFM and force modulation microscopy (FMM) were employed. The particles buried under 960 nm from the surface were successfully visualized which has never been achieved. The results elucidated that it is important for subsurface imaging to choose a cantilever with a suitable stiffness range for a matrix. In case of using the most suitable cantilever, the nanoparticles were visualized using every technique shown above except for FMM. The experimental results suggest that the subsurface features buried in a soft matrix with a depth of at least 1 µm can affect the local viscoelasticity (mainly viscosity) detected as the variation of the amplitude and phase of the tip oscillation on the surface. This phenomenon presumably makes it possible to visualize such deeply buried nanometer-scale features in a soft matrix. - Highlights: • We visualized subsurface features buried in soft matrix, and investigated its imaging mechanism. • AFM techniques; UAFM, FMM, HFM and 2nd-harmonic UAFM were applied to elucidate the mechanism. • Au nanoparticles buried under 960 nm from surface were visualized, which has never been achieved. • Imaging at contact resonance using a cantilever of suitable stiffness is important. • Subsurface features in a soft matrix affect surface viscoelasticity, which are detected by AFM

  20. Deeply trapped electrons in imaging plates and their utilization for extending the dynamic range

    International Nuclear Information System (INIS)

    Ohuchi, Hiroko; Kondo, Yasuhiro

    2010-01-01

    The absorption spectra of deep centers in an imaging plate (IP) made of BaFBr 0:85 I 0:15 :Eu 2+ have been studied in the ultraviolet region. Electrons trapped in deep centers are considered to be the cause of unerasable and reappearing latent images in IPs over-irradiated with X-rays. Deep centers showed a dominant peak at around 320 nm, followed by two small peaks at around 345 and 380 nm. By utilizing deeply trapped electrons, we have attempted to extend the dynamic range of an IP. The IP was irradiated by 150-kV X-rays with doses from 8.07 mGy to 80.7 Gy. Reading out the latent image by the stimulation of Eu 2+ luminescence with a 633-nm He-Ne laser light from a conventional Fuji reader showed a linear relationship with irradiated dose up to 0.8 Gy, but then becoming non-linear. After fully erasing with visible light, unerasable latent images were read out using 635-nm semi-conductor laser light combined with a photon-counting detection system. The dose-response curve so obtained gave a further two orders of magnitude extending the dynamic range up to 80.7 Gy. Comprehensive results indicate that electrons supplied from deep centers to the F centers provided the extended dynamic range after the F centers became saturated. Based on these facts, a model of the excitation of deeply trapped electrons and PSL processes is proposed.

  1. Metallographic examination of TD-nickel base alloys. [thermal and chemical etching technique evaluation

    Science.gov (United States)

    Kane, R. D.; Petrovic, J. J.; Ebert, L. J.

    1975-01-01

    Techniques are evaluated for chemical, electrochemical, and thermal etching of thoria dispersed (TD) nickel alloys. An electrochemical etch is described which yielded good results only for large grain sizes of TD-nickel. Two types of thermal etches are assessed for TD-nickel: an oxidation etch and vacuum annealing of a polished specimen to produce an etch. It is shown that the first etch was somewhat dependent on sample orientation with respect to the processing direction, the second technique was not sensitive to specimen orientation or grain size, and neither method appear to alter the innate grain structure when the materials were fully annealed prior to etching. An electrochemical etch is described which was used to observe the microstructures in TD-NiCr, and a thermal-oxidation etch is shown to produce better detail of grain boundaries and to have excellent etching behavior over the entire range of grain sizes of the sample.

  2. Bond strength with various etching times on young permanent teeth

    Energy Technology Data Exchange (ETDEWEB)

    Wang, W.N.; Lu, T.C. (School of Dentistry, National Defense Medical Center, Taipei, Taiwan (China))

    1991-07-01

    Tensile bond strengths of an orthodontic resin cement were compared for 15-, 30-, 60-, 90-, or 120-second etching times, with a 37% phosphoric acid solution on the enamel surfaces of young permanent teeth. Fifty extracted premolars from 9- to 16-year-old children were used for testing. An orthodontic composite resin was used to bond the bracket directly onto the buccal surface of the enamel. The tensile bond strengths were tested with an Instron machine. Bond failure interfaces between bracket bases and teeth surfaces were examined with a scanning electron microscope and calculated with mapping of energy-dispersive x-ray spectrometry. The results of tensile bond strength for 15-, 30-, 60-, or 90-second etching times were not statistically different. For the 120-second etching time, the decrease was significant. Of the bond failures, 43%-49% occurred between bracket and resin interface, 12% to 24% within the resin itself, 32%-40% between resin and tooth interface, and 0% to 4% contained enamel fragments. There was no statistical difference in percentage of bond failure interface distribution between bracket base and resin, resin and enamel, or the enamel detachment. Cohesive failure within the resin itself at the 120-second etching time was less than at other etching times, with a statistical significance. To achieve good retention, to decrease enamel loss, and to reduce moisture contamination in the clinic, as well as to save chairside time, a 15-second etching time is suggested for teenage orthodontic patients.

  3. Acid-catalyzed kinetics of indium tin oxide etching

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Jae-Hyeok; Kim, Seong-Oh; Hilton, Diana L. [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); Cho, Nam-Joon, E-mail: njcho@ntu.edu.sg [School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore); Centre for Biomimetic Sensor Science, Nanyang Technological University, 50 Nanyang Drive, 637553 (Singapore); School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, 637459 (Singapore)

    2014-08-28

    We report the kinetic characterization of indium tin oxide (ITO) film etching by chemical treatment in acidic and basic electrolytes. It was observed that film etching increased under more acidic conditions, whereas basic conditions led to minimal etching on the time scale of the experiments. Quartz crystal microbalance was employed in order to track the reaction kinetics as a function of the concentration of hydrochloric acid and accordingly solution pH. Contact angle measurements and atomic force microscopy experiments determined that acid treatment increases surface hydrophilicity and porosity. X-ray photoelectron spectroscopy experiments identified that film etching is primarily caused by dissolution of indium species. A kinetic model was developed to explain the acid-catalyzed dissolution of ITO surfaces, and showed a logarithmic relationship between the rate of dissolution and the concentration of undisassociated hydrochloric acid molecules. Taken together, the findings presented in this work verify the acid-catalyzed kinetics of ITO film dissolution by chemical treatment, and support that the corresponding chemical reactions should be accounted for in ITO film processing applications. - Highlights: • Acidic conditions promoted indium tin oxide (ITO) film etching via dissolution. • Logarithm of the dissolution rate depended linearly on the solution pH. • Acid treatment increased ITO surface hydrophilicity and porosity. • ITO film etching led to preferential dissolution of indium species over tin species.

  4. Thermal etching of silver: Influence of rolling defects

    Energy Technology Data Exchange (ETDEWEB)

    Ollivier, M., E-mail: o.maelig@imperial.ac.uk [Department of Materials, Imperial College London, SW7 2AZ (United Kingdom); Harker, R.M. [AWE Aldermaston, Aldermaston, Reading RG7 4PR (United Kingdom); Chater, R.J.; Gourlay, C.M. [Department of Materials, Imperial College London, SW7 2AZ (United Kingdom)

    2016-08-15

    Silver is well known to be thermally etched in an oxygen-rich atmosphere and has been extensively studied in the laboratory to understand thermal etching and to limit its effect when this material is used as a catalyst. Yet, in many industrial applications the surface of rolled silver sheets is used without particular surface preparation. Here, it is shown by combining FIB-tomography, FIB-SIMS and analytical SEM that the kinetics of thermal etch pitting are significantly faster on rolled Ag surfaces than on polished surfaces. This occurs due to range of interacting phenomena including (i) the reaction of subsurface carbon-contamination with dissolved oxygen to form pores that grow to intersect the surface, (ii) surface reconstruction around corrosion pits and surface scratches, and (iii) sublimation at low pressure and high temperature. A method to identify subsurface pores is developed to show that the pores have (111) and (100) internal facets and may be filled with a gas coming from the chemical reaction of oxygen and carbon contamination. - Highlights: Thermal etching of industrial silver sheets vs. polished silver sheets Effect of annealing atmosphere on the thermal etching of silver: surface and subsurface characterization Link between etch pitting and defects induced by rolling. FIB-tomography coupled with EBSD for determining crystal planes of the facets of subsurface pores. FIB-SIMS characterization to probe the gas confined inside subsurface pores.

  5. Etching of germanium-tin using ammonia peroxide mixture

    Energy Technology Data Exchange (ETDEWEB)

    Dong, Yuan; Ong, Bin Leong; Wang, Wei; Gong, Xiao; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, #08-03, Innovis, Singapore 138634 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

    2015-12-28

    The wet etching of germanium-tin (Ge{sub 1-x}Sn{sub x}) alloys (4.2% < x < 16.0%) in ammonia peroxide mixture (APM) is investigated. Empirical fitting of the data points indicates that the etch depth of Ge{sub 1-x}Sn{sub x} is proportional to the square root of the etch time t and decreases exponentially with increasing x for a given t. In addition, X-ray photoelectron spectroscopy results show that increasing t increases the intensity of the Sn oxide peak, whereas no obvious change is observed for the Ge oxide peak. This indicates that an accumulation of Sn oxide on the Ge{sub 1-x}Sn{sub x} surface decreases the amount of Ge atoms exposed to the etchant, which accounts for the decrease in etch rate with increasing etch time. Atomic force microscopy was used to examine the surface morphologies of the Ge{sub 0.918}Sn{sub 0.082} samples. Both root-mean-square roughness and undulation periods of the Ge{sub 1-x}Sn{sub x} surface were observed to increase with increasing t. This work provides further understanding of the wet etching of Ge{sub 1-x}Sn{sub x} using APM and may be used for the fabrication of Ge{sub 1-x}Sn{sub x}-based electronic and photonic devices.

  6. Level Set Approach to Anisotropic Wet Etching of Silicon

    Directory of Open Access Journals (Sweden)

    Branislav Radjenović

    2010-05-01

    Full Text Available In this paper a methodology for the three dimensional (3D modeling and simulation of the profile evolution during anisotropic wet etching of silicon based on the level set method is presented. Etching rate anisotropy in silicon is modeled taking into account full silicon symmetry properties, by means of the interpolation technique using experimentally obtained values for the etching rates along thirteen principal and high index directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method (ITK library, developed in medical image processing community, extended for the case of non-convex Hamiltonians. Simulation results for some interesting initial 3D shapes, as well as some more practical examples illustrating anisotropic etching simulation in the presence of masks (simple square aperture mask, convex corner undercutting and convex corner compensation, formation of suspended structures are shown also. The obtained results show that level set method can be used as an effective tool for wet etching process modeling, and that is a viable alternative to the Cellular Automata method which now prevails in the simulations of the wet etching process.

  7. Single Mode Optical Fiber based Refractive Index Sensor using Etched Cladding

    OpenAIRE

    Kumar, Ajay; Gupta, Geeta; Mallik, Arun; Bhatnagar, Anuj

    2011-01-01

    The use of optical fiber for sensor applications is a topic of current interest. We report the fabrication of etched single mode optical fiber based refractive index sensor. Experiments are performed to determine the etch rate of fiber in buffered hydrofluoric acid, which can be high or low depending upon the temperature at which etching is carried out. Controlled wet etching of fiber cladding is performed using these measurements and etched fiber region is tested for refractive index sensing...

  8. An In Vitro Evaluation of Leakage of Two Etch and Rinse and Two Self-Etch Adhesives after Thermocycling

    OpenAIRE

    Geerts, Sabine; Bolette, Amandine; Seidel, Laurence; Guéders, Audrey

    2012-01-01

    Our experiment evaluated the microleakage in resin composite restorations bonded to dental tissues with different adhesive systems. 40 class V cavities were prepared on the facial and lingual surfaces of each tooth with coronal margins in enamel and apical margins in cementum (root dentin). The teeth were restored with Z100 resin composite bonded with different adhesive systems: Scotchbond Multipurpose (SBMP), a 3-step Etch and Rinse adhesive, Adper Scotchbond 1 XT (SB1), a 2-step Etch and Ri...

  9. Temperature increase beneath etched dentin discs during composite polymerization.

    Science.gov (United States)

    Karaarslan, Emine Sirin; Secilmis, Asli; Bulbul, Mehmet; Yildirim, Cihan; Usumez, Aslihan

    2011-01-01

    The purpose of this in vitro study was to measure the temperature increase during the polymerization of a composite resin beneath acid-etched or laser-etched dentin discs. The irradiation of dentin with an Er:YAG laser may have a positive effect on the thermal conductivity of dentin. This technique has not been studied extensively. Forty dentin discs (5 mm in diameter and 0.5 or 1 mm in height) were prepared from extracted permanent third molars. These dentin discs were etched with 20% orthophosphoric acid or an Er:YAG laser, and were then placed on an apparatus developed to measure temperature increases. The composite resin was polymerized with a high-intensity quartz tungsten halogen (HQTH) or light-emitting diode unit (LED). The temperature increase was measured under the dentin disc with a J-type thermocouple wire that was connected to a data logger. Five measurements were made for each dentin disc, curing unit, and etching system combination. Differences between the initial and the highest temperature readings were taken, and the five calculated temperature changes were averaged to determine the value of the temperature increase. Statistical analysis was performed with a three-way ANOVA and Tukey HSD tests at a 0.05 level of significance. Further SEM examinations were performed. The temperature increase values varied significantly, depending on etching systems (p < 0.05), dentin thicknesses (p < 0.05), and curing units (p < 0.05). Temperature increases measured beneath laser-etched discs were significantly higher than those for acid-etched dentin discs (p < 0.05). The HQTH unit induced significantly higher temperature increases than the LED unit (p < 0.05). The LED unit induced the lowest temperature change (5.2°C) in the 1-mm, acid-etched dentin group. The HQTH unit induced the highest temperature change (10.4°C) for the 0.5-mm, laser-etched dentin group. The risk of heat-induced pulpal damage should be taken into consideration

  10. What Is Dry Eye?

    Medline Plus

    Full Text Available ... Eye Symptoms Causes of Dry Eye Dry Eye Treatment What Is Dry Eye? Leer en Español: ¿Qué ... Your Eyelid Nov 29, 2017 New Dry Eye Treatment is a Tear-Jerker Jul 21, 2017 Three ...

  11. Drying of building lumber

    Energy Technology Data Exchange (ETDEWEB)

    Washimi, Hiroshi

    1988-08-20

    Dried lumber is classified into air dried and kiln-dried lumber. The water content of kiln-dried lumber is specified by the Japan Agricultural Standards. However, since building lumber varies in such factors as the location where it was growing, species and shape, the standards, though relaxed, are not being observed. In fact, lumbered products which are not ''Kiln-dried'' frequently bear ''kiln-dried lumber'' marks. In an attempt to correct the situation, the Forestry Agency has set up voluntary standards, but problems still remain. The conventional drying method consists of first subjecting the lumber to optimum drying, then letting bending and deformations to freely and fully appear, and follow this with corrective sawing to produce planks straight from end to end. Compared with air dried lumber in terms of moisture content, kiln-dried lumber remains much with same with minimal shrinkage and expansion. For oil-containing resin, such normal treatments as drying by heating, steaming and boiling seem to be quite effective. Kiln drying, which is becoming more and more important with changes in the circulation system, consists of the steaming-drying-heating method and the dehumidizing type drying method. The major factor which determines the drying cost is the number of days required for drying, which depends largely on the kind of lumber and moisture content. The Forestry Angency is promoting production of defoiled lumber. (2 figs, 2 tables)

  12. Effects of gas-flow structures on radical and etch-product density distributions on wafers in magnetomicrowave plasma etching reactors

    International Nuclear Information System (INIS)

    Ikegawa, Masato; Kobayashi, Jun'ichi; Fukuyama, Ryoji

    2001-01-01

    To achieve high etch rate, uniformity, good selectivity, and etch profile control across large diameter wafers, the distributions of ions, radicals, and etch products in magnetomicrowave high-etch-rate plasma etching reactors must be accurately controlled. In this work the effects of chamber heights, a focus ring around the wafer, and gas supply structures (or gas flow structures) on the radicals and etch products flux distribution onto the wafer were examined using the direct simulation Monte Carlo method and used to determine the optimal reactor geometry. The pressure uniformity on the wafer was less than ±1% when the chamber height was taller than 60 mm. The focus ring around the wafer produced uniform radical and etch-product fluxes but increased the etch-product flux on the wafer. A downward-flow gas-supply structure (type II) produced a more uniform radical distribution than that produced by a radial gas-supply structure (type I). The impact flow of the type II structure removed etch products from the wafer effectively and produced a uniform etch-product distribution even without the focus ring. Thus the downward-flow gas-supply structure (type II) was adopted in the design for the second-generation of a magnetomicrowave plasma etching reactor with a higher etching rate

  13. Advanced Simulation Technology to Design Etching Process on CMOS Devices

    Science.gov (United States)

    Kuboi, Nobuyuki

    2015-09-01

    Prediction and control of plasma-induced damage is needed to mass-produce high performance CMOS devices. In particular, side-wall (SW) etching with low damage is a key process for the next generation of MOSFETs and FinFETs. To predict and control the damage, we have developed a SiN etching simulation technique for CHxFy/Ar/O2 plasma processes using a three-dimensional (3D) voxel model. This model includes new concepts for the gas transportation in the pattern, detailed surface reactions on the SiN reactive layer divided into several thin slabs and C-F polymer layer dependent on the H/N ratio, and use of ``smart voxels''. We successfully predicted the etching properties such as the etch rate, polymer layer thickness, and selectivity for Si, SiO2, and SiN films along with process variations and demonstrated the 3D damage distribution time-dependently during SW etching on MOSFETs and FinFETs. We confirmed that a large amount of Si damage was caused in the source/drain region with the passage of time in spite of the existing SiO2 layer of 15 nm in the over etch step and the Si fin having been directly damaged by a large amount of high energy H during the removal step of the parasitic fin spacer leading to Si fin damage to a depth of 14 to 18 nm. By analyzing the results of these simulations and our previous simulations, we found that it is important to carefully control the dose of high energy H, incident energy of H, polymer layer thickness, and over-etch time considering the effects of the pattern structure, chamber-wall condition, and wafer open area ratio. In collaboration with Masanaga Fukasawa and Tetsuya Tatsumi, Sony Corporation. We thank Mr. T. Shigetoshi and Mr. T. Kinoshita of Sony Corporation for their assistance with the experiments.

  14. Surfactant-enhanced control of track-etch pore morphology

    International Nuclear Information System (INIS)

    Apel', P.Yu.; Blonskaya, I.V.; Didyk, A.Yu.; Dmitriev, S.N.; Orelovich, O.L.; Samojlova, L.I.; Vutsadakis, V.A.; Root, D.

    2000-01-01

    The influence of surfactants on the process of chemical development of ion tracks in polymers is studied. Based on the experimental data, a mechanism of the surfactant effect on the track-etch pore morphology is proposed. In the beginning of etching the surfactant is adsorbed on the surface and creates a layer that is quasi-solid and partially protects the surface from the etching agent. However, some etchant molecules diffuse through the barrier and react with the polymer surface. This results in the formation of a small hole at the entrance to the ion track. After the hole has attained a few annometers in diameter, the surfactant molecules penetrate into the track and cover its walls. Further diffusion of the surfactant into the growing pore is hindered. The adsorbed surfactant layer is not permeable for large molecules. In contrast, small alkali molecules and water molecules diffuse into the track and provide the etching process enlarging the pore. At this stage the transport of the surfactant into the pore channel can proceed only due to the lateral diffusion in the adsorbed layer. The volume inside the pore is free of surfactant molecules and grows at a higher rate than pore entrance. After a more prolonged etching the bottle-like (or 'cigar-like') pore channels are formed. The bottle-like shape of the pore channels depends on the etching conditions such as alkali and surfactant concentration, temperature, and type of the surfactant. The use of surfactants enables one to produce track-etch membranes with improved flow rate characteristics compared with those having cylindrical pores with the same nominal pore diameters

  15. Deeply Virtual Compton scattering at CERN. What is the size of the proton?

    Energy Technology Data Exchange (ETDEWEB)

    Joerg, Philipp

    2017-04-27

    Tremendous efforts have been made to understand the Englert-Brout-Higgs-Guralnik-Hagen-Kibble mechanism, which led to the successful discovery of the Higgs Boson and the clarification of the origin of the mass of fundamental particles. However, it is often forgotten that the vast majority of visible matter is given by baryons, which gain most of their mass dynamically within poorly known non-perturbative quantum chromodynamics processes. The best laboratory to study the underlying mechanisms of non-perturbative quantum chromodynamics is still given by the nucleon and the central question of how the macroscopic properties of a nucleon like its mass, spin and size can be comprehensively decomposed into the microscopic description in terms of quarks, antiquarks and gluons remains still open. A major part of the COMPASS-II program is dedicated to the investigation of Generalized Parton Distributions (GPDs), which aim for the most complete description of the partonic structure of the nucleon, comprising both, spacial and kinematic distributions. By including transverse degrees of freedom, a three dimensional picture of baryonic matter is created, which will revolutionise our understanding of what comprises 99 percent of the visible matter. GPDs are experimentally accessible via lepton-induced exclusive reactions, in particular the Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP). At COMPASS, those processes are investigated using a high intensity muon beam of 160 GeV/c together with a 2.5 m-long liquid hydrogen target and an open field two stage spectrometer, to detect and identify charged and neutral particles. In order to optimize the selection of exclusive reactions at those energies, the target is surrounded by a new barrel-shaped time-of-flight system, which detects the recoiling target particles. A pilot run dedicated to the measurement of Generalized Parton distributions performed in 2012 allows for detailed performance studies

  16. Bond strength of a pit-and-fissure sealant associated to etch-and-rinse and self-etching adhesive systems to saliva-contaminated enamel: individual vs. simultaneous light curing.

    Science.gov (United States)

    Gomes-Silva, Jaciara Miranda; Torres, Carolina Paes; Contente, Marta Maria Martins Giamatei; Oliveira, Maria Angélica Hueb de Menezes; Palma-Dibb, Regina Guenka; Borsatto, Maria Cristina

    2008-01-01

    This study evaluated in vitro the shear bond strength (SBS) of a resin-based pit-and-fissure sealant [Fluroshield (F), Dentsply/Caulk] associated with either an etch-and-rinse [Adper Single Bond 2 (SB), 3M/ESPE] or a self-etching adhesive system [Clearfil S3 Bond (S3), Kuraray Co., Ltd.] to saliva-contaminated enamel, comparing two curing protocols: individual light curing of the adhesive system and the sealant or simultaneous curing of both materials. Mesial and distal enamel surfaces from 45 sound third molars were randomly assigned to 6 groups (n=15), according to the bonding technique: I - F was applied to 37% phosphoric acid etched enamel. The other groups were contaminated with fresh human saliva (0.01 mL; 10 s) after acid etching: II - SB and F were light cured separately; III - SB and F were light cured together; IV - S3 and F were light cured separately; V - S3 and F were light cured simultaneously; VI - F was applied to saliva-contaminated, acid-etched enamel without an intermediate bonding agent layer. SBS was tested to failure in a universal testing machine at 0.5 mm/min. Data were analyzed by one-way ANOVA and Fisher's test (alpha=0.05).The debonded specimens were examined with a stereomicroscope to assess the failure modes. Three representative specimens from each group were observed under scanning electron microscopy for a qualitative analysis. Mean SBS in MPa were: I-12.28 (+/-4.29); II-8.57 (+/-3.19); III-7.97 (+/-2.16); IV-12.56 (+/-3.11); V-11.45 (+/-3.77); and VI-7.47 (+/-1.99). In conclusion, individual or simultaneous curing of the intermediate bonding agent layer and the resin sealant did not seem to affect bond strength to saliva-contaminated enamel. S3/F presented significantly higher SBS than the that of the groups treated with SB etch-and-rinse adhesive system and similar SBS to that of the control group, in which the sealant was applied under ideal dry, noncontaminated conditions.

  17. The Effect of Phosphoric Acid Pre-etching Times on Bonding Performance and Surface Free Energy with Single-step Self-etch Adhesives.

    Science.gov (United States)

    Tsujimoto, A; Barkmeier, W W; Takamizawa, T; Latta, M A; Miyazaki, M

    2016-01-01

    The purpose of this study was to evaluate the effect of phosphoric acid pre-etching times on shear bond strength (SBS) and surface free energy (SFE) with single-step self-etch adhesives. The three single-step self-etch adhesives used were: 1) Scotchbond Universal Adhesive (3M ESPE), 2) Clearfil tri-S Bond (Kuraray Noritake Dental), and 3) G-Bond Plus (GC). Two no pre-etching groups, 1) untreated enamel and 2) enamel surfaces after ultrasonic cleaning with distilled water for 30 seconds to remove the smear layer, were prepared. There were four pre-etching groups: 1) enamel surfaces were pre-etched with phosphoric acid (Etchant, 3M ESPE) for 3 seconds, 2) enamel surfaces were pre-etched for 5 seconds, 3) enamel surfaces were pre-etched for 10 seconds, and 4) enamel surfaces were pre-etched for 15 seconds. Resin composite was bonded to the treated enamel surface to determine SBS. The SFEs of treated enamel surfaces were determined by measuring the contact angles of three test liquids. Scanning electron microscopy was used to examine the enamel surfaces and enamel-adhesive interface. The specimens with phosphoric acid pre-etching showed significantly higher SBS and SFEs than the specimens without phosphoric acid pre-etching regardless of the adhesive system used. SBS and SFEs did not increase for phosphoric acid pre-etching times over 3 seconds. There were no significant differences in SBS and SFEs between the specimens with and without a smear layer. The data suggest that phosphoric acid pre-etching of ground enamel improves the bonding performance of single-step self-etch adhesives, but these bonding properties do not increase for phosphoric acid pre-etching times over 3 seconds.

  18. ECE laboratory in the Vinca Institute - its basic characteristics and fundamentals of electrochemical etching on polycarbonate

    International Nuclear Information System (INIS)

    Zunic, Z.S.; Ujic, P.; Celikovic, I.; Fujimoto, K.

    2003-01-01

    This paper deals with the introductory aspects of the Electrochemical Etching Laboratory installed at the VINCA Institute in the year 2003. The main purpose of the laboratory is its field application for radon and thoron large-scale survey using passive radon/thoron UFO type detectors. Since the etching techniques together with the laboratory equipment were transferred from the National Institute of Radiological Sciences, Chiba, Japan, it was necessary for both etching conditions to be confirmed and to be checked up, i. e., bulk etching speeds of chemical etching and electrochemical etching in the VINCA Electrochemical Etching Laboratory itself. Beside this initial step, other concerns were taken into consideration in this preliminary experimental phase such as the following: the measurable energy range of the polycarbonate film, background etch pit density of the film and its standard deviation and reproducibility of the response to alpha particles for different sets of etchings. (author)

  19. Shear bond strength of orthodontic brackets after acid-etched and erbium-doped yttrium aluminum garnet laser-etched

    Directory of Open Access Journals (Sweden)

    Shiva Alavi

    2014-01-01

    Full Text Available Background: Laser ablation has been suggested as an alternative method to acid etching; however, previous studies have obtained contrasting results. The purpose of this study was to compare the shear bond strength (SBS and fracture mode of orthodontic brackets that are bonded to enamel etched with acid and erbium-doped yttrium aluminum garnet (Er:YAG laser. Materials and Methods: In this experimental in vitro study, buccal surfaces of 15 non-carious human premolars were divided into mesial and distal regions. Randomly, one of the regions was etched with 37% phosphoric acid for 15 s and another region irradiated with Er:YAG laser at 100 mJ energy and 20 Hz frequency for 20 s. Stainless steel brackets were then bonded using Transbond XT, following which all the samples were stored in distilled water for 24 h and then subjected to 500 thermal cycles. SBS was tested by a chisel edge, mounted on the crosshead of universal testing machine. After debonding, the teeth were examined under Χ10 magnification and adhesive remnant index (ARI score determined. SBS and ARI scores of the two groups were then compared using t-test and Mann-Whitney U test. Significant level was set at P < 0.05. Results: The mean SBS of the laser group (16.61 ± 7.7 MPa was not significantly different from that of the acid-etched group (18.86 ± 6.09 MPa (P = 0.41. There was no significant difference in the ARI scores between two groups (P = 0.08. However, in the laser group, more adhesive remained on the brackets, which is not suitable for orthodontic purposes. Conclusion: Laser etching at 100 mJ energy produced bond strength similar to acid etching. Therefore, Er:YAG laser may be an alternative method for conventional acid-etching.

  20. Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

    Energy Technology Data Exchange (ETDEWEB)

    Grégoire, Geneviève, E-mail: genevieve.gregoire@univ-tlse3.fr [Department of Biomaterials, Faculty of Odontology, University Toulouse III, 31062 Toulouse (France); Sharrock, Patrick, E-mail: patrick.sharrock@gmail.com [CNRS UMR 5302, University Toulouse III, Mines-Albi, 81013 Albi (France); Prigent, Yann, E-mail: prigent@chimie.ups-tlse.fr [Institut de Chimie de Toulouse (ICT) – FR 2599, Faculté des Sciences et de l' Ingénierie, University Toulouse III, 31062 Toulouse (France)

    2016-09-01

    A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

  1. Performance of a universal adhesive on etched and non-etched surfaces: Do the results match the expectations?

    International Nuclear Information System (INIS)

    Grégoire, Geneviève; Sharrock, Patrick; Prigent, Yann

    2016-01-01

    A universal adhesive was applied to human dentin in both the etched and rinsed state and the normal non etched state, to compare the resulting properties and detect any significant differences. The study focused on observations of the hybrid layer by scanning electron microscopy and on fluid permeation measurements as a function of time. Spectroscopic characterizations included infrared and differential calorimetric curves of the samples. The results obtained show non-statistically significant fluid permeability between the two sample types. Both the etched and rinsed samples and the non-etched ones showed similar homogeneous hybrid layers that reduced the fluid flow, and corresponded to well spread polymer coatings. The infrared results illustrated the spectra obtained on going from the outside adhesive layer to the inside portion of the dentin-polymer interface and did not reveal any intermediate zone resembling demineralized collagen that would be water saturated and not infiltrated with adhesive. The Differential Scanning Calorimetry (DSC) curves corresponded to the curves obtained with ethanol wet bonding in that free water (melting at 0 °C) was removed by the universal adhesive, and that no collagen melting was observed for the non-etched samples. The Diffusion-Ordered Spectroscopy Nuclear Magnetic Resonance (DOSY NMR) spectrum of the virgin adhesive showed the presence of water and ethanol solvents and indicated that several monomer or prepolymer molecules were present with multiple acrylic functional groups with diffusion coefficients related to molecular weights. Overall, the results show that universal adhesive can be used in the milder self-etch mode and that more aggressive etch and rinse procedure can be reserved for the occasions with sclerotic dentin or enamel regions more difficult to treat.

  2. Singular Sheet Etching of Graphene with Oxygen Plasma

    Institute of Scientific and Technical Information of China (English)

    Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

    2014-01-01

    This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching(SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition,etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000?C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

  3. Singular Sheet Etching of Graphene with Oxygen Plasma

    Institute of Scientific and Technical Information of China (English)

    Haider Al-Mumen; Fubo Rao; Wen Li; Lixin Dong

    2014-01-01

    This paper reports a simple and controllable post-synthesis method for engineering the number of graphene layers based on oxygen plasma etching. Singular sheet etching (SSE) of graphene was achieved with the optimum process duration of 38 seconds. As a demonstration of this SSE process, monolayer graphene films were produced from bilayer graphenes. Experimental investigations verified that the oxygen plasma etching removes a single layer graphene sheet in an anisotropic fashion rather than anisotropic mode. In addition, etching via the oxygen plasma at the ground electrodes introduced fewer defects to the bottom graphene layer compared with the conventional oxygen reactive ion etching using the powered electrodes. Such defects can further be reduced with an effective annealing treatment in an argon environment at 900-1000◦C. These results demonstrate that our developed SSE method has enabled a microelectronics manufacturing compatible way for single sheet precision subtraction of graphene layers and a potential technique for producing large size graphenes with high yield from multilayer graphite materials.

  4. Plasma atomic layer etching using conventional plasma equipment

    International Nuclear Information System (INIS)

    Agarwal, Ankur; Kushner, Mark J.

    2009-01-01

    The decrease in feature sizes in microelectronics fabrication will soon require plasma etching processes having atomic layer resolution. The basis of plasma atomic layer etching (PALE) is forming a layer of passivation that allows the underlying substrate material to be etched with lower activation energy than in the absence of the passivation. The subsequent removal of the passivation with carefully tailored activation energy then removes a single layer of the underlying material. If these goals are met, the process is self-limiting. A challenge of PALE is the high cost of specialized equipment and slow processing speed. In this work, results from a computational investigation of PALE will be discussed with the goal of demonstrating the potential of using conventional plasma etching equipment having acceptable processing speeds. Results will be discussed using inductively coupled and magnetically enhanced capacitively coupled plasmas in which nonsinusoidal waveforms are used to regulate ion energies to optimize the passivation and etch steps. This strategy may also enable the use of a single gas mixture, as opposed to changing gas mixtures between steps

  5. FY 1999 report on the results of the R and D of the substituting gas system and the substituting process of the etching gas used in the electronic device production process; 1999 nendo denshi device seizo process de shiyosuru etching gas no daitai gas system oyobi daitai process no kenkyu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    As to the dry etching process and the wiring process where PFC gas and electric power are required most in the electronic device production process, an investigational study was conducted with the aim of PFC saving and energy saving, and the FY 1999 results were summed up. In the study, high efficiency etching process analysis equipment was developed, and three kinds of PFC gas quantitative analysis method were comparatively studied. Relating to the substitution of global environmental warming gas, it was found that C{sub x}F{sub y} type gas was effective which includes no oxygen, has a lot of carbon element numbers, and has double unsaturated bond. Further, in the study of the technology of PFC decomposition by plasma, it was indicated that PFC of 98.7% at maximum in exhaust gas could be removed on ideal conditions. In the dry etching technology by non-PFC gas of the organic insulating film, it was found out that NH{sub 3} base gas is more excellent in both shape and speed of etching than the existing O{sub 2} base one. As to the future wiring technology, new concepts of the optical wiring inside chip, etc. were proposed. (NEDO)

  6. Transverse Extension of Partons in the Proton probed by Deeply Virtual Compton Scattering

    CERN Document Server

    Akhunzyanov, R.; The COMPASS collaboration; Alexeev, G.D.; Amoroso, A.; Andrieux, V.; Anfimov, N.V.; Anosov, V.; Antoshkin, A.; Augsten, K.; Augustyniak, W.; Austregesilo, A.; Azevedo, C.D.R.; Badełek, B.; Balestra, F.; Ball, M.; Barth, J.; Beck, R.; Bedfer, Y.; Bernhard, J.; Bicker, K.; Bielert, E.R.; Birsa, R.; Bodlak, M.; Bordalo, P.; Bradamante, F.; Bressan, A.; Büchele, M.; Burtin, E.; Burtsev, V.E.; Chang, W.-C.; Chatterjee, C.; Chiosso, M.; Choi, I.; Chumakov, A.G.; Chung, S.-U.; Cicuttin, A.; Crespo, M.L.; Dalla Torre, S.; Dasgupta, S.S.; Dasgupta, S.; Denisov, O.Yu.; Dhara, L.; Donskov, S.V.; Doshita, N.; Dreisbach, Ch.; Dünnweber, W.; Dusaev, R.R.; Dziewiecki, M.; Efremov, A.; Eversheim, P.D.; Faessler, M.; Ferrero, A.; Finger, M.; jr., M.Finger; Fischer, H.; Franco, C.; du Fresne von Hohenesche, N.; Friedrich, J.M.; Frolov, V.; Fuchey, E.; Gautheron, F.; Gavrichtchouk, O.P.; Gerassimov, S.; Giarra, J.; Gnesi, I.; Gorzellik, M.; Grasso, A.; Gridin, A.; Grosse Perdekamp, M.; Grube, B.; Grussenmeyer, T.; Guskov, A.; Hahne, D.; Hamar, G.; von Harrach, D.; Heitz, R.; Herrmann, F.; Horikawa, N.; d'Hose, N.; Hsieh, C.-Y.; Huber, S.; Ishimoto, S.; Ivanov, A.; Ivanshin, Yu.; Iwata, T.; Jary, V.; Joosten, R.; Jörg, P.; Juraskova, K.; Kabuß, E.; Kerbizi, A.; Ketzer, B.; Khaustov, G.V.; Khokhlov, Yu.A.; Kisselev, Yu.; Klein, F.; Koivuniemi, J.H.; Kolosov, V.N.; Kondo, K.; Konorov, I.; Konstantinov, V.F.; Kotzinian, A.M.; Kouznetsov, O.M.; Kral, Z.; Krämer, M.; Krinner, F.; Kroumchtein, Z.V.; Kulinich, Y.; Kunne, F.; Kurek, K.; Kurjata, R.P.; Kuznetsov, I.I.; Kveton, A.; Lednev, A.A.; Levchenko, E.A.; Levillain, M.; Levorato, S.; Lian, Y.-S.; Lichtenstadt, J.; Longo, R.; Lyubovitskij, V.E.; Maggiora, A.; Magnon, A.; Makins, N.; Makke, N.; Mallot, G.K.; Mamon, S.A.; Marianski, B.; Martin, A.; Marzec, J.; Matoušek, J.; Matsuda, H.; Matsuda, T.; Meshcheryakov, G.V.; Meyer, M.; Meyer, W.; Mikhailov, Yu.V.; Mikhasenko, M.; Mitrofanov, E.; Mitrofanov, N.; Miyachi, Y.; Moretti, A.; Nagaytsev, A.; Nerling, F.; Neyret, D.; Nový, J.; Nowak, W.-D.; Nukazuka, G.; Nunes, A.S.; Olshevsky, A.G.; Orlov, I.; Ostrick, M.; Panzieri, D.; Parsamyan, B.; Paul, S.; Peng, J.-C.; Pereira, F.; Pešek, M.; Pešková, M.; Peshekhonov, D.V.; Pierre, N.; Platchkov, S.; Pochodzalla, J.; Polyakov, V.A.; Pretz, J.; Quaresma, M.; Quintans, C.; Ramos, S.; Regali, C.; Reicherz, G.; Riedl, C.; Rogacheva, N.S.; Ryabchikov, D.I.; Rybnikov, A.; Rychter, A.; Salac, R.; Samoylenko, V.D.; Sandacz, A.; Santos, C.; Sarkar, S.; Savin, I.A.; Sawada, T.; Sbrizzai, G.; Schiavon, P.; Schmieden, H.; Schönning, K.; Seder, E.; Selyunin, A.; Silva, L.; Sinha, L.; Sirtl, S.; Slunecka, M.; Smolik, J.; Srnka, A.; Steffen, D.; Stolarski, M.; Subrt, O.; Sulc, M.; Suzuki, H.; Szabelski, A.; Szameitat, T.; Sznajder, P.; Tasevsky, M.; Tessaro, S.; Tessarotto, F.; Thiel, A.; Tomsa, J.; Tosello, F.; Tskhay, V.; Uhl, S.; Vasilishin, B.I.; Vauth, A.; Veit, B.M.; Veloso, J.; Vidon, A.; Virius, M.; Wallner, S.; Wilfert, M.; ter Wolbeek, J.; Zaremba, K.; Zavada, P.; Zavertyaev, M.; Zemlyanichkina, E.; Zhuravlev, N.; Ziembicki, M.

    2018-01-01

    We report on the first measurement of exclusive single-photon muoproduction on the proton by COMPASS using 160 GeV/$c$ polarized $\\mu^+$ and $\\mu^-$ beams of the CERN SPS impinging on a liquid hydrogen target. We determine the dependence of the average of the measured $\\mu^+$ and $\\mu^-$ cross sections for deeply virtual Compton scattering on the squared four-momentum transfer $t$ from the initial to the final final proton. The slope $B$ of the $t$-dependence is fitted with a single exponential function, which yields $B=(4.3 \\ \\pm \\ 0.6_{\\text{stat}}\\ _{- \\ 0.3}^{+ \\ 0.1}\\big\\rvert_{\\text{sys}})\\,(\\text{GeV}/c)^{-2}$. This result can be converted into an average transverse extension of partons in the proton, $\\sqrt{\\langle r_{\\perp}^2 \\rangle} = (0.58 \\ \\pm \\ 0.04_{\\text{stat}}\\ _{- \\ 0.02}^{+ \\ 0.01}\\big\\rvert_{\\text{sys}}) \\text{fm}$. For this measurement, the average virtuality of the photon mediating the interaction is $\\langle Q^2 \\rangle = 1.8\\,(\\text{GeV/}c)^2$ and the average value of the Bjorken va...

  7. Measurement of deeply virtual Compton scattering and its t-dependence at HERA

    Energy Technology Data Exchange (ETDEWEB)

    Aaron, F.D. [National Insitute for Physics and Nuclear Engineering (NIPNE), Bucharest (Romania)]|[Bucharest Univ. (Romania). Faculty of Physics; Aktas, A. [DESY Hamburg (Germany); Alexa, C. [National Insitute for Physics and Nuclear Engineering (NIPNE), Bucharest (RO)] (and others)

    2007-09-15

    A measurement of elastic deeply virtual Compton scattering {gamma}{sup *}p {yields} {gamma}p using e{sup -}p collision data recorded with the H1 detector at HERA is presented. The analysed data sample corresponds to an integrated luminosity of 145 pb{sup -1}. The cross section is measured as a function of the virtuality Q{sup 2} of the exchanged photon and the centre-of-mass energy W of the {gamma}{sup *}p system in the kinematic domain 6.5

  8. Deeply virtual Compton scattering off an unpolarised hydrogen target at HERMES

    Energy Technology Data Exchange (ETDEWEB)

    Burns, Jonathan R.T.

    2010-08-15

    Deeply Virtual Compton Scattering (DVCS) i.e. ep {yields} ep{gamma} is the simplest interaction that allows access to Generalised Parton Distributions (GPDs), a theoretical framework describing nucleon structure. The strong interest in GPDs results from the fact that they can be used to determine the total angular momentum of quarks inside the nucleon and provide a 3-dimensional picture of nucleon structure. The measurement of the DVCS process is facilitated by the interference with a competing interaction known as the Bethe-Heitler process which has the same nal state. DVCS information is obtained from the asymmetrical in distribution of the real photon around the azimuthal angle {phi} at HERMES. Beam charge and beam helicity asymmetries, extracted from DVCS events with an unpolarised hydrogen target recorded during the 2006-2007 and 1996-2007 data taking periods, are presented in this thesis. The asymmetry amplitudes are presented over the range of HERMES kinematic acceptance, with their dependence on kinematic variables t, x{sub B} and Q{sup 2} also shown and compared to a phenomenological model. (orig.)

  9. High permeability cores to optimize the stimulation of deeply located brain regions using transcranial magnetic stimulation

    International Nuclear Information System (INIS)

    Salvador, R; Miranda, P C; Roth, Y; Zangen, A

    2009-01-01

    Efficient stimulation of deeply located brain regions with transcranial magnetic stimulation (TMS) poses many challenges, arising from the fact that the induced field decays rapidly and becomes less focal with depth. We propose a new method to improve the efficiency of TMS of deep brain regions that combines high permeability cores, to increase focality and field intensity, with a coil specifically designed to induce a field that decays slowly with increasing depth. The performance of the proposed design was investigated using the finite element method to determine the total electric field induced by this coil/core arrangement on a realistically shaped homogeneous head model. The calculations show that the inclusion of the cores increases the field's magnitude by as much as 25% while also decreasing the field's decay with depth along specific directions. The focality, as measured by the area where the field's norm is greater than 1/√2 of its maximum value, is also improved by as much as 15% with some core arrangements. The coil's inductance is not significantly increased by the cores. These results show that the presence of the cores might make this specially designed coil even more suited for the effective stimulation of deep brain regions.

  10. High permeability cores to optimize the stimulation of deeply located brain regions using transcranial magnetic stimulation

    Science.gov (United States)

    Salvador, R.; Miranda, P. C.; Roth, Y.; Zangen, A.

    2009-05-01

    Efficient stimulation of deeply located brain regions with transcranial magnetic stimulation (TMS) poses many challenges, arising from the fact that the induced field decays rapidly and becomes less focal with depth. We propose a new method to improve the efficiency of TMS of deep brain regions that combines high permeability cores, to increase focality and field intensity, with a coil specifically designed to induce a field that decays slowly with increasing depth. The performance of the proposed design was investigated using the finite element method to determine the total electric field induced by this coil/core arrangement on a realistically shaped homogeneous head model. The calculations show that the inclusion of the cores increases the field's magnitude by as much as 25% while also decreasing the field's decay with depth along specific directions. The focality, as measured by the area where the field's norm is greater than 1/\\sqrt 2 of its maximum value, is also improved by as much as 15% with some core arrangements. The coil's inductance is not significantly increased by the cores. These results show that the presence of the cores might make this specially designed coil even more suited for the effective stimulation of deep brain regions.

  11. High permeability cores to optimize the stimulation of deeply located brain regions using transcranial magnetic stimulation

    Energy Technology Data Exchange (ETDEWEB)

    Salvador, R; Miranda, P C [Institute of Biophysics and Biomedical Engineering, Faculty of Sciences, University of Lisbon, 1749-016 Lisbon (Portugal); Roth, Y [Advanced Technology Center, Sheba Medical Center, Tel-Hashomer (Israel); Zangen, A [Neurobiology Department, Weizmann Institute of Science, Rehovot 76100 (Israel)], E-mail: rnsalvador@fc.ul.pt

    2009-05-21

    Efficient stimulation of deeply located brain regions with transcranial magnetic stimulation (TMS) poses many challenges, arising from the fact that the induced field decays rapidly and becomes less focal with depth. We propose a new method to improve the efficiency of TMS of deep brain regions that combines high permeability cores, to increase focality and field intensity, with a coil specifically designed to induce a field that decays slowly with increasing depth. The performance of the proposed design was investigated using the finite element method to determine the total electric field induced by this coil/core arrangement on a realistically shaped homogeneous head model. The calculations show that the inclusion of the cores increases the field's magnitude by as much as 25% while also decreasing the field's decay with depth along specific directions. The focality, as measured by the area where the field's norm is greater than 1/{radical}2 of its maximum value, is also improved by as much as 15% with some core arrangements. The coil's inductance is not significantly increased by the cores. These results show that the presence of the cores might make this specially designed coil even more suited for the effective stimulation of deep brain regions.

  12. The interventional diagnosis and therapy for thyroid disease should be studied deeply and developed prudently

    International Nuclear Information System (INIS)

    Zhao Wei; Cheng Yongde

    2007-01-01

    Many details concerning the interventional diagnosis and therapy of thyroid disease need to be studied deeply and carefully; for example, the thyroid applied anatomy, especially the anatomical imageology study of the thyroid arterial anastomosis involving the therapeutic effects and complications, the thyroid artery embolization treatment, presently as a substitution or the supplement therapy for the traditional classical therapy of Graves disease. There are many exploration to extend the indication scope, the therapeutic effect, embolization scope in intervention for Graves disease due to having no accurate individual quantification standard, and so on. The thyroid arterial embolization for Graves disease is to reduce the main cause of thyroxin secretion. Simultaneously, the comprehensive therapeutic effects might have possibly produce the thyroidcytic apoptosis and immune adjustments. Serious complications such as the cerebral infarction, the hyperthyroidism crisis, the hypocalcemia, the periodic paralysis, and so on commonly occured in thyroid arterial embolization. It is necessary to keep strictly the procedure rule and the indication. The mid-and long- term therapeutic effect of thyroid artery embolization for Graves disease is good, but still need more extensive and prudent research for the prospective achievement. (authors)

  13. Deeply virtual Compton scattering with the CLAS detector for the study of generalized parton distributions

    International Nuclear Information System (INIS)

    Girod, F.X.

    2006-12-01

    The structure of the nucleon, among the first fundamental problems in hadronic physics, is the subject of a renewed interest. The lightest baryonic state has historically been described in two complementary approaches: through elastic scattering, measuring form factors which reflect the spatial shape of charge distributions, and through deep inelastic scattering, providing access to parton distribution functions which encode the momentum content carried by the constituents. The recently developed formalism of Generalized Parton Distributions unifies those approaches and provides access to new informations. The cleanest process sensitive to GPDs is the deeply virtual Compton scattering (DVCS) contributing to the ep → epγ reaction. This work deals with a dedicated experiment accomplished with the CLAS detector, completed with two specific equipments: a lead tungstate calorimeter covering photon detection at small angles, and a superconducting solenoid actively shielding the electromagnetic background. The entire project is covered: from the upgrade of the experimental setup, through the update of the software, data taking and analysis, up to a first comparison of the beam spin asymmetry to model predictions. (author)

  14. The HERMES recoil photon detector and the study of deeply virtual Compton scattering

    Energy Technology Data Exchange (ETDEWEB)

    Hulse, Charlotte van

    2011-03-15

    The study of deeply virtual Compton scattering (DVCS) gives information about the contribution of the quark orbital angular momentum to the spin of the proton. DVCS has been studied at the HERMES experiment at DESY in Hamburg. Here 27.6 GeV longitudinally polarized electrons and positrons were scattered off a gaseous proton target. For the analysis of DVCS the recoiling proton could not be detected, but was reconstructed via its missing mass. This method suffers, however, from a 14% background contribution, mainly originating from associated DVCS. In this process the proton does not stay in its ground state but is excited to a {delta}{sup +} resonance. In order to reduce the background contribution down to less than 1%, a recoil detector was installed in the HERMES experiment beginning of 2006. This detector consists of three subcomponents, of which one is the photon detector. The main function of the photon detector is the detection of {delta}{sup +} decay photons. The photon detector was started up and commissioned for the analysis of (associated) DVCS. Subsequently DVCS and associated DVCS were analyzed using the recoil detector. (orig.)

  15. Many-Objective Robust Decision Making: Managing Water in a Deeply Uncertain World of Change (Invited)

    Science.gov (United States)

    Reed, P. M.

    2013-12-01

    Water resources planning and management has always required the consideration of uncertainties and the associated system vulnerabilities that they may cause. Despite the long legacy of these issues, our decision support frameworks that have dominated the literature over the past 50 years have struggled with the strongly multiobjective and deeply uncertain nature of water resources systems. The term deep uncertainty (or Knightian uncertainty) refers to factors in planning that strongly shape system risks that maybe unknown and even if known there is a strong lack of consensus on their likelihoods over decadal planning horizons (population growth, financial stability, valuation of resources, ecosystem requirements, evolving water institutions, regulations, etc). In this presentation, I will propose and demonstrate the many-objective robust decision making (MORDM) framework for water resources management under deep uncertainty. The MORDM framework will be demonstrated using an urban water portfolio management test case. In the test case, a city in the Lower Rio Grande Valley managing population and drought pressures must cost effectively maintain the reliability of its water supply by blending permanent rights to reservoir inflows with alternative strategies for purchasing water within the region's water market. The case study illustrates the significant potential pitfalls in the classic Cost-Reliability conception of the problem. Moreover, the proposed MORDM framework exploits recent advances in multiobjective search, visualization, and sensitivity analysis to better expose these pitfalls en route to identifying highly robust water planning alternatives.

  16. Measurement of Deeply Virtual Compton Scattering and its t-dependence at HERA

    CERN Document Server

    Aaron, F.D.; Alexa, C.; Andreev, V.; Antunovic, B.; Aplin, S.; Asmone, A.; Astvatsatourov, A.; Backovic, S.; Baghdasaryan, A.; Baranov, P.; Barrelet, E.; Bartel, W.; Baudrand, S.; Beckingham, M.; Begzsuren, K.; Behnke, O.; Behrendt, O.; Belousov, A.; Berger, N.; Bizot, J.C.; Boenig, M.O.; Boudry, V.; Bozovic-Jelisavcic, I.; Bracinik, J.; Brandt, G.; Brinkmann, M.; Brisson, V.; Bruncko, D.; Busser, F.W.; Bunyatyan, A.; Buschhorn, G.; Bystritskaya, L.; Campbell, A.J.; Cantun Avila, K.B.; Cassol-Brunner, F.; Cerny, K.; Cerny, V.; Chekelian, V.; Cholewa, A.; Contreras, J.G.; Coughlan, J.A.; Cozzika, G.; Cvach, J.; Dainton, J.B.; Daum, K.; Deak, M.; de Boer, Y.; Delcourt, B.; Del Degan, M.; Delvax, J.; De Roeck, A.; De Wolf, E.A.; Diaconu, C.; Dodonov, V.; Dossanov, A.; Dubak, A.; Eckerlin, G.; Efremenko, V.; Egli, S.; Eichler, R.; Eisele, F.; Eliseev, A.; Elsen, E.; Essenov, S.; Falkiewicz, A.; Faulkner, P.J.W.; Favart, L.; Fedotov, A.; Felst, R.; Feltesse, J.; Ferencei, J.; Finke, L.; Fleischer, M.; Fomenko, A.; Franke, G.; Frisson, T.; Gabathuler, E.; Gayler, J.; Ghazaryan, S.; Glazov, A.; Glushkov, I.; Goerlich, L.; Goettlich, M.; Gogitidze, N.; Gorbounov, S.; Gouzevitch, M.; Grab, C.; Greenshaw, T.; Grell, B.R.; Grindhammer, G.; Habib, S.; Haidt, D.; Hansson, M.; Heinzelmann, G.; Helebrant, C.; Henderson, R.C.W.; Henschel, H.; Herrera, G.; Hildebrandt, M.; Hiller, K.H.; Hoffmann, D.; Horisberger, R.; Hovhannisyan, A.; Hreus, T.; Jacquet, M.; Janssen, M.E.; Janssen, X.; Jemanov, V.; Jonsson, L.; Johnson, D.P.; Jung, Andreas Werner; Jung, H.; Kapichine, M.; Katzy, J.; Kenyon, I.R.; Kiesling, C.; Klein, M.; Kleinwort, C.; Klimkovich, T.; Kluge, T.; Knutsson, A.; Kogler, R.; Korbel, V.; Kostka, P.; Kraemer, M.; Krastev, K.; Kretzschmar, J.; Kropivnitskaya, A.; Kruger, K.; Kutak, K.; Landon, M.P.J.; Lange, W.; Lastovicka-Medin, G.; Laycock, P.; Lebedev, A.; Leibenguth, G.; Lendermann, V.; Levonian, S.; Li, G.; Lindfeld, L.; Lipka, K.; Liptaj, A.; List, B.; List, J.; Loktionova, N.; Lopez-Fernandez, R.; Lubimov, V.; Lucaci-Timoce, A.I.; Lytkin, L.; Makankine, A.; Malinovski, E.; Marage, P.; Marti, Ll.; Martyn, H.U.; Maxfield, S.J.; Mehta, A.; Meier, K.; Meyer, A.B.; Meyer, H.; Meyer, H.; Meyer, J.; Michels, V.; Mikocki, S.; Milcewicz-Mika, I.; Mohamed, A.; Moreau, F.; Morozov, A.; Morris, J.V.; Mozer, M.U.; Mudrinic, M.; Muller, K.; Murin, P.; Nankov, K.; Naroska, B.; Naumann, Th.; Newman, P.R.; Niebuhr, C.; Nikiforov, A.; Nowak, G.; Nowak, K.; Nozicka, M.; Olivier, B.; Olsson, J.E.; Osman, S.; Ozerov, D.; Palichik, V.; Panagoulias, I.; Pandurovic, M.; Papadopoulou, Th.; Pascaud, C.; Patel, G.D.; Peng, H.; Perez, E.; Perez-Astudillo, D.; Perieanu, A.; Petrukhin, A.; Picuric, I.; Piec, S.; Pitzl, D.; Placakyte, R.; Polifka, R.; Povh, B.; Preda, T.; Prideaux, P.; Radescu, V.; Rahmat, A.J.; Raicevic, N.; Raspiareza, A.; Ravdandorj, T.; Reimer, P.; Risler, C.; Rizvi, E.; Robmann, P.; Roland, B.; Roosen, R.; Rostovtsev, A.; Rurikova, Z.; Rusakov, S.; Salek, D.; Salvaire, F.; Sankey, D.P.C.; Sauter, M.; Sauvan, E.; Schmidt, S.; Schmitt, S.; Schmitz, C.; Schoeffel, L.; Schoning, A.; Schultz-Coulon, H.C.; Sefkow, F.; Shaw-West, R.N.; Sheviakov, I.; Shtarkov, L.N.; Sloan, T.; Smiljanic, Ivan; Smirnov, P.; Soloviev, Y.; South, D.; Spaskov, V.; Specka, A.; Staykova, Z.; Steder, M.; Stella, B.; Stiewe, J.; Straumann, U.; Sunar, D.; Sykora, T.; Tchoulakov, V.; Thompson, G.; Thompson, P.D.; Toll, T.; Tomasz, F.; Tran, T.H.; Traynor, D.; Trinh, T.N.; Truol, P.; Tsakov, I.; Tseepeldorj, B.; Tsurin, I.; Turnau, J.; Tzamariudaki, E.; Urban, K.; Valkarova, A.; Vallee, C.; Van Mechelen, P.; Vargas Trevino, A.; Vazdik, Y.; Vinokurova, S.; Volchinski, V.; Weber, G.; Weber, R.; Wegener, D.; Werner, C.; Wessels, M.; Wissing, Ch.; Wolf, R.; Wunsch, E.; Yeganov, V.; Zacek, J.; Zalesak, J.; Zhang, Z.; Zhelezov, A.; Zhokin, A.; Zhu, Y.C.; Zimmermann, T.; Zohrabyan, H.; Zomer, F.

    2008-01-01

    A measurement of elastic deeply virtual Compton scattering gamma* p -> gamma p using e-p collision data recorded with the H1 detector at HERA is presented. The analysed data sample corresponds to an integrated luminosity of 145 pb^-1. The cross section is measured as a function of the virtuality Q^2 of the exchanged photon and the centre-of-mass energy W of the gamma*p system in the kinematic domain 6.5 < Q^2 < 80 GeV^2, 30 < W < 140 GeV and |t| < 1 GeV^2, where t denotes the squared momentum transfer at the proton vertex. The cross section is determined differentially in t for different Q^2 and W values and exponential t-slope parameters are derived. The measurements are compared to a NLO QCD calculation based on generalised parton distributions. In the context of the dipole approach, the geometric scaling property of the DVCS cross section is studied for different values of t.

  17. Detailed analysis of the resonant backscattering spectrum for deeply penetrating protons in carbon

    International Nuclear Information System (INIS)

    Tosaki, Mitsuo; Ito, Shin; Maeda, Nobuhiro

    2000-01-01

    In order to study the spectral response in Rutherford backscattering spectroscopy (RBS) for deeply penetrating ions in matter, the resonant backscattering spectra for 5.05-, 5.5- and 6.0-MeV proton incidence on solid carbon material have been measured at a scattering angle of 179.2 deg. (in lab.). Prominent peaks resulting from the sharp 4.8-MeV resonance in 12 C(p,p) 12 C nuclear elastic scattering are observed, even for a penetration depth of 79 μm. Detailed numerical calculations based on an algorithm of straightforward step-by-step evaluation have been made to simulate the observed spectra. The algorithm enables one to rigorously treat both the effect of sharp resonance structure and that of energy-dependent energy loss. Calculations with the SIMNRA code are also made. Through comparison of these calculations with the measured results, some conclusions on the two effects above are presented. In addition, it is demonstrated that the peak profile due to a sharp resonance is very sensitive to the degree of energy straggling

  18. Coherent deeply virtual Compton scattering off 3He and neutron generalized parton distributions

    Directory of Open Access Journals (Sweden)

    Rinaldi Matteo

    2014-06-01

    Full Text Available It has been recently proposed to study coherent deeply virtual Compton scattering (DVCS off 3He nuclei to access neutron generalized parton distributions (GPDs. In particular, it has been shown that, in Impulse Approximation (IA and at low momentum transfer, the sum of the quark helicity conserving GPDs of 3He, H and E, is dominated by the neutron contribution. This peculiar result makes the 3He target very promising to access the neutron information. We present here the IA calculation of the spin dependent GPD H See Formula in PDF of 3He. Also for this quantity the neutron contribution is found to be the dominant one, at low momentum transfer. The known forward limit of the IA calculation of H See Formula in PDF , yielding the polarized parton distributions of 3He, is correctly recovered. The extraction of the neutron information could be anyway non trivial, so that a procedure, able to take into account the nuclear effects encoded in the IA analysis, is proposed. These calculations, essential for the evaluation of the coherent DVCS cross section asymmetries, which depend on the GPDs H,E and H See Formula in PDF , represent a crucial step for planning possible experiments at Jefferson Lab.

  19. Experimental setup for deeply virtual Compton scattering (DVCS) experiment in hall A at Jefferson Laboratory

    International Nuclear Information System (INIS)

    Camsonne, A.

    2005-11-01

    The Hall A Deeply Virtual Compton Scattering (DVCS) experiment used the 5.757 GeV polarized electron beam available at Jefferson Laboratory and ran from september until december 2004. Using the standard Hall A left high resolution spectrometer three kinematical points were taken at a fixed x b (jorken) = 0.32 value for three Q 2 values: 1.5 GeV 2 , 1.91 GeV 2 , 2.32 GeV 2 . An electromagnetic Lead Fluoride calorimeter and a proton detector scintillator array designed to work at a luminosity of 10 37 cm -2 s -1 were added to ensure the exclusivity of the DVCS reaction. In addition to the new detectors new custom electronics was used: a calorimeter trigger module which determines if an electron photon coincidence has occurred and a sampling system allowing to deal with pile-up events during the offline analysis. Finally the data from the kinematic at Q 2 = 2.32 GeV 2 and s = 5.6 GeV 2 allowed to get a preliminary result for the exclusive π 0 electroproduction on the proton. (author)

  20. International Workshop on Exotic Hadronic Atoms, Deeply Bound Kaonic Nuclear States and Antihydrogen : Present Results, Future Challenges

    CERN Document Server

    Widmann, E; Curceanu, C; Trento 2006; Trento06

    2006-01-01

    These are the miniproceedings of the workshop "Exotic hadronic atoms, deeply bound kaonic nuclear states and antihydrogen: present results, future challenges," which was held at the European Centre for Theoretical Nuclear Physics and Related Studies (ECT*), Trento (Italy), June 19-24, 2006. The document includes a short presentation of the topics, the list of participants, and a short contribution from each speaker.

  1. Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

    Science.gov (United States)

    Hirata, Akiko; Fukasawa, Masanaga; Nagahata, Kazunori; Li, Hu; Karahashi, Kazuhiro; Hamaguchi, Satoshi; Tatsumi, Tetsuya

    2018-06-01

    The rate of etching of tin-doped indium oxide (ITO) and the effects of a hydrogen-induced modified layer on cyclic, multistep thin-layer etching were investigated. It was found that ITO cyclic etching is possible by precisely controlling the hydrogen-induced modified layer. Highly selective etching of ITO/SiO2 was also investigated, and it was suggested that cyclic etching by selective surface adsorption of Si can precisely control the etch rates of ITO and SiO2, resulting in an almost infinite selectivity for ITO over SiO2 and in improved profile controllability.

  2. Influence of redeposition on the plasma etching dynamics

    International Nuclear Information System (INIS)

    Stafford, L.; Margot, J.; Delprat, S.; Chaker, M.; Pearton, S. J.

    2007-01-01

    This work reports on measurements of the degree of redeposition of sputtered species during the etching of platinum (Pt), barium-strontium-titanate (BST), strontium-bismuth-tantalate (SBT), and photoresist (PR) in a high-density argon plasma. While PR exhibits a redeposition-free behavior, the degree of redeposition of Pt, BST, and SBT species increases from 10% to 95% as the argon pressure increases from 0.5 to 10 mTorr. These results are in good agreement with the predictions of a simple model accounting for the backscattering of sputtered species following their interaction with the gas phase. Based on these results and using other experimental data reported in the literature, it is further demonstrated that, depending on the plasma etching conditions, redeposition effects can induce misinterpretation of the etch rate data

  3. Etched track radiometers in radon measurements: a review

    CERN Document Server

    Nikolaev, V A

    1999-01-01

    Passive radon radiometers, based on alpha particle etched track detectors, are very attractive for the assessment of radon exposure. The present review considers various devices used for measurement of the volume activity of radon isotopes and their daughters and determination of equilibrium coefficients. Such devices can be classified into 8 groups: (i) open or 'bare' detectors, (ii) open chambers, (iii) sup 2 sup 2 sup 2 Rn chambers with an inlet filter, (iv) advanced sup 2 sup 2 sup 2 Rn radiometers, (v) multipurpose radiometers, (vi) radiometers based on a combination of etched track detectors and an electrostatic field, (vii) radiometers based on etched track detectors and activated charcoal and (viii) devices for the measurement of radon isotopes and/or radon daughters by means of track parameter measurements. Some of them such as the open detector and the chamber with an inlet filter have a variety of modifications and are applied widely both in geophysical research and radon dosimetric surveys. At the...

  4. Method of plasma etching Ga-based compound semiconductors

    Science.gov (United States)

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  5. Femtosecond laser etching of dental enamel for bracket bonding.

    Science.gov (United States)

    Kabas, Ayse Sena; Ersoy, Tansu; Gülsoy, Murat; Akturk, Selcuk

    2013-09-01

    The aim is to investigate femtosecond laser ablation as an alternative method for enamel etching used before bonding orthodontic brackets. A focused laser beam is scanned over enamel within the area of bonding in a saw tooth pattern with a varying number of lines. After patterning, ceramic brackets are bonded and bonding quality of the proposed technique is measured by a universal testing machine. The results are compared to the conventional acid etching method. Results show that bonding strength is a function of laser average power and the density of the ablated lines. Intrapulpal temperature changes are also recorded and observed minimal effects are observed. Enamel surface of the samples is investigated microscopically and no signs of damage or cracking are observed. In conclusion, femtosecond laser exposure on enamel surface yields controllable patterns that provide efficient bonding strength with less removal of dental tissue than conventional acid-etching technique.

  6. Adiabatic tapered optical fiber fabrication in two step etching

    Science.gov (United States)

    Chenari, Z.; Latifi, H.; Ghamari, S.; Hashemi, R. S.; Doroodmand, F.

    2016-01-01

    A two-step etching method using HF acid and Buffered HF is proposed to fabricate adiabatic biconical optical fiber tapers. Due to the fact that the etching rate in second step is almost 3 times slower than the previous droplet etching method, terminating the fabrication process is controllable enough to achieve a desirable fiber diameter. By monitoring transmitted spectrum, final diameter and adiabaticity of tapers are deduced. Tapers with losses about 0.3 dB in air and 4.2 dB in water are produced. The biconical fiber taper fabricated using this method is used to excite whispering gallery modes (WGMs) on a microsphere surface in an aquatic environment. So that they are suitable to be used in applications like WGM biosensors.

  7. High density plasma via hole etching in SiC

    International Nuclear Information System (INIS)

    Cho, H.; Lee, K.P.; Leerungnawarat, P.; Chu, S.N.G.; Ren, F.; Pearton, S.J.; Zetterling, C.-M.

    2001-01-01

    Throughwafer vias up to 100 μm deep were formed in 4H-SiC substrates by inductively coupled plasma etching with SF 6 /O 2 at a controlled rate of ∼0.6 μm min-1 and use of Al masks. Selectivities of >50 for SiC over Al were achieved. Electrical (capacitance-voltage: current-voltage) and chemical (Auger electron spectroscopy) analysis techniques showed that the etching produced only minor changes in reverse breakdown voltage, Schottky barrier height, and near surface stoichiometry of the SiC and had high selectivity over common frontside metallization. The SiC etch rate was a strong function of the incident ion energy during plasma exposure. This process is attractive for power SiC transistors intended for high current, high temperature applications and also for SiC micromachining

  8. A comparison of orthodontic bracket shear bond strength on enamel deproteinized by 5.25% sodium hypochlorite using total etch and self-etch primer

    Science.gov (United States)

    Ongkowidjaja, F.; Soegiharto, B. M.; Purbiati, M.

    2017-08-01

    The shear bond strength (SBS) can be increased by removing protein pellicles from the enamel surface by deproteinization using 5.25% sodium hypochlorite (NaOCl). The SBS of a self-etch primer is lower than that of a total etch primer; nonetheless, it prevents white spot lesions. This study aimed to assess the SBS of the Anyetch (AE) total etch primer and FL-Bond II Shofu (FL) self-etch primer after enamel deproteinization using 5.25% NaOCl. Forty eight human maxillary first premolars were extracted, cleaned, and divided into four groups. In group A, brackets were bonded to the enamel without deproteinization before etching (A1: 10 teeth using total etch primer (AE); A2: 10 teeth using self-etch primer (FL)). In group B, brackets were bonded to the enamel after deproteinization with 5.25% NaOCl before etching (B1: 10 teeth using total etch primer (AE); B2: 10 teeth using self-etch primer (FL)). Brackets were bonded using Transbond XT, stored in artificial saliva for 24 h at 37°C, mounted on acrylic cylinders, and debonded using a Shimadzu AG-5000 universal testing machine. There were no significant differences in SBS between the total etch (AE) groups (p > 0.05) and between the self-etch (FL) groups (p > 0.05). There were significant differences in SBS between groups A and B. The mean SBS for groups A1, A2, B1, and B2 was 12.91±3.99, 4.46±2.47, 13.06±3.66, and 3.62±2.36 MPa, respectively. Deproteinization using NaOCl did not affect the SBS of the total etch primer (AE) group; it reduced the SBS of the self-etch primer (FL) group, but not with a statistically significant difference.

  9. DBAC: A simple prediction method for protein binding hot spots based on burial levels and deeply buried atomic contacts

    Science.gov (United States)

    2011-01-01

    Background A protein binding hot spot is a cluster of residues in the interface that are energetically important for the binding of the protein with its interaction partner. Identifying protein binding hot spots can give useful information to protein engineering and drug design, and can also deepen our understanding of protein-protein interaction. These residues are usually buried inside the interface with very low solvent accessible surface area (SASA). Thus SASA is widely used as an outstanding feature in hot spot prediction by many computational methods. However, SASA is not capable of distinguishing slightly buried residues, of which most are non hot spots, and deeply buried ones that are usually inside a hot spot. Results We propose a new descriptor called “burial level” for characterizing residues, atoms and atomic contacts. Specifically, burial level captures the depth the residues are buried. We identify different kinds of deeply buried atomic contacts (DBAC) at different burial levels that are directly broken in alanine substitution. We use their numbers as input for SVM to classify between hot spot or non hot spot residues. We achieve F measure of 0.6237 under the leave-one-out cross-validation on a data set containing 258 mutations. This performance is better than other computational methods. Conclusions Our results show that hot spot residues tend to be deeply buried in the interface, not just having a low SASA value. This indicates that a high burial level is not only a necessary but also a more sufficient condition than a low SASA for a residue to be a hot spot residue. We find that those deeply buried atoms become increasingly more important when their burial levels rise up. This work also confirms the contribution of deeply buried interfacial atomic contacts to the energy of protein binding hot spot. PMID:21689480

  10. Dry Mouth (Xerostomia)

    Science.gov (United States)

    ... Finding Dental Care Home Health Info Health Topics Dry Mouth Saliva, or spit, is made by the salivary ... help keep teeth strong and fight tooth decay. Dry mouth, also called xerostomia (ZEER-oh-STOH-mee-ah), ...

  11. What Is Dry Eye?

    Medline Plus

    Full Text Available ... Dry Eye Symptoms Related Ask an Ophthalmologist Answers Can a six-month dissolvable punctal plug be removed ... my eyes dry after LASIK? Jun 19, 2016 Can I be tested whether I close my eyes ...

  12. Electron microscopy analysis of structural changes within white etching areas

    DEFF Research Database (Denmark)

    Diederichs, Annika Martina; Schwedt, A.; Mayer, J.

    2016-01-01

    In the present work, crack networks with white etching areas (WEAs) in cross-sections of bearings were investigated by a complementary use of SEM and TEM with the focus on the use of orientation contrast imaging and electron backscatter diffraction (EBSD). Orientation contrast imaging was used...... for the first time to give detailed insight into the microstructure of WEA. A significant difference between Nital-etched and polished WEA samples was observed. It was revealed that WEAs are composed of different areas with varying grain sizes. As a result of secondary transformation, needle-shaped grains were...

  13. Gamma dosimetry with CR-39 etch track detector

    International Nuclear Information System (INIS)

    Matiullah; Dogar, A.H.; Ahmad, N.; Amin, M.; Kudo, Katsuhisa

    1999-01-01

    To preserve and improve the safety of food for commercial purposes, it is exposed to high gamma-ray doses. The gamma-ray doses used for this purpose range from 0.15 kGy to 50 kGy. At such high doses, the etching characteristics of CR-39 are severely affected. This property, therefore, can be used to develop a CR-39-based gamma dosimeter. In this context, systematic studies were carried out and the bulk etching rate was determined as a function of gamma-ray dose using different methods. (author)

  14. A Reactive-Ion Etch for Patterning Piezoelectric Thin Film

    Science.gov (United States)

    Yang, Eui-Hyeok; Wild, Larry

    2003-01-01

    Reactive-ion etching (RIE) under conditions described below has been found to be a suitable means for patterning piezoelectric thin films made from such materials as PbZr(1-x)Ti(x)O3 or Ba(x)Sr(1.x)TiO3. In the original application for which this particular RIE process was developed, PbZr(1-x)Ti(x)O3 films 0.5 microns thick are to be sandwiched between Pt electrode layers 0.1 microns thick and Ir electrode layers 0.1 microns thick to form piezoelectric capacitor structures. Such structures are typical of piezoelectric actuators in advanced microelectromechanical systems now under development or planned to be developed in the near future. RIE of PbZr(1-x)Ti(x)O3 is usually considered to involve two major subprocesses: an ion-assisted- etching reaction, and a sputtering subprocess that removes reactive byproducts. RIE is favored over other etching techniques because it offers a potential for a high degree of anisotropy, high-resolution pattern definition, and good process control. However, conventional RIE is not ideal for patterning PbZr(1-x)Ti(x)O3 films at a thickness as great as that in the original intended application. In order to realize the potential benefits mentioned above, it is necessary to optimize process conditions . in particular, the composition of the etching gas and the values of such other process parameters as radio-frequency power, gas pressure, gas-flow rate, and duration of the process. Guidelines for determining optimum conditions can be obtained from experimental determination of etch rates as functions of these parameters. Etch-gas mixtures of BCl3 and Cl2, some also including Ar, have been found to offer a high degree of selectivity as needed for patterning of PbZr(1-x)Ti(x)O3 films on top of Ir electrode layers in thin-film capacitor structures. The selectivity is characterized by a ratio of approx.10:1 (rate of etching PbZr(1-x)Ti(x)O3 divided by rate of etching Ir and IrO(x)). At the time of reporting the information for this article

  15. Enhanced optical performance of electrochemically etched porous silicon carbide

    International Nuclear Information System (INIS)

    Naderi, N; Hashim, M R; Saron, K M A; Rouhi, J

    2013-01-01

    Porous silicon carbide (PSC) was successfully synthesized via electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using various current densities. The cyclic voltammograms of SiC dissolution show that illumination is required for the accumulation of carriers at the surface, followed by surface oxidation and dissolution of the solid. The morphological and optical characterizations of PSC were reported. Scanning electron microscopy results demonstrated that the current density can be considered an important etching parameter that controls the porosity and uniformity of PSC; hence, it can be used to optimize the optical properties of the porous samples. (paper)

  16. What Is Dry Eye?

    Medline Plus

    Full Text Available ... Eye Health A-Z Symptoms Glasses & Contacts Tips & Prevention News Ask an Ophthalmologist Patient Stories Español Eye ... Eye Symptoms Causes of Dry Eye Dry Eye Treatment What Is Dry Eye? Leer en Español: ¿Qué ...

  17. IPHAS J062746.41+014811.3: A DEEPLY ECLIPSING INTERMEDIATE POLAR

    International Nuclear Information System (INIS)

    Aungwerojwit, A.; Gänsicke, B. T.; Wheatley, P. J.; Pyrzas, S.; Staels, B.; Krajci, T.; Rodríguez-Gil, P.

    2012-01-01

    We present time-resolved photometry of a cataclysmic variable discovered in the Isaac Newton Telescope Photometric Hα Survey of the northern galactic plane, IPHAS J062746.41+014811.3, and classify the system as the fourth deeply eclipsing intermediate polar known with an orbital period of P orb = 8.16 hr and a spin period of P spin = 2210 s. The system shows mild variations of its brightness that appear to be accompanied by a change in the amplitude of the spin modulation at optical wavelengths and a change in the morphology of the eclipse profile. The inferred magnetic moment of the white dwarf is μ wd ∼ (6-7) × 10 33 G cm 3 , and in this case IPHAS J062746.41+014811.3 will evolve either into a short-period EX Hya-like intermediate polar with a large P spin /P orb ratio or, perhaps more likely, into a synchronized polar. Swift observations show that the system is an ultraviolet and X-ray source, with a hard X-ray spectrum that is consistent with those seen in other intermediate polars. The ultraviolet light curve shows orbital modulation and an eclipse, while the low signal-to-noise ratio X-ray light curve does not show a significant modulation on the spin period. The measured X-ray flux is about an order of magnitude lower than would be expected from scaling by the optical fluxes of well-known X-ray-selected intermediate polars.

  18. Minimizing the regrets of long-term urban floodplain management decisions under deeply uncertain climate change

    Science.gov (United States)

    Hecht, J. S.; Kirshen, P. H.; Vogel, R. M.

    2016-12-01

    Making long-term floodplain management decisions under uncertain climate change is a major urban planning challenge of the 21stcentury. To support these efforts, we introduce a screening-level optimization model that identifies adaptation portfolios by minimizing the regrets associated with their flood-control and damage costs under different climate change trajectories that are deeply uncertain, i.e. have probabilities that cannot be specified plausibly. This mixed integer program explicitly considers the coupled damage-reduction impacts of different floodwall designs and property-scale investments (first-floor elevation, wet floodproofing of basements, permanent retreat and insurance), recommends implementation schedules, and assesses impacts to stakeholders residing in three types of homes. An application to a stylized municipality illuminates many nonlinear system dynamics stemming from large fixed capital costs, infrastructure design thresholds, and discharge-depth-damage relationships. If stakeholders tolerate mild damage, floodwalls that fully protect a community from large design events are less cost-effective than portfolios featuring both smaller floodwalls and property-scale measures. Potential losses of property tax revenue from permanent retreat motivate municipal property-tax initiatives for adaptation financing. Yet, insurance incentives for first-floor elevation may discourage locally financed floodwalls, in turn making lower-income residents more vulnerable to severe flooding. A budget constraint analysis underscores the benefits of flexible floodwall designs with low incremental expansion costs while near-optimal solutions demonstrate the scheduling flexibility of many property-scale measures. Finally, an equity analysis shows the importance of evaluating the overpayment and under-design regrets of recommended adaptation portfolios for each stakeholder and contrasts them to single-scenario model results.

  19. Effective inelastic scattering cross-sections for background analysis in HAXPES of deeply buried layers

    Energy Technology Data Exchange (ETDEWEB)

    Risterucci, P., E-mail: paul.risterucci@gmail.com [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Université de Lyon, Institut des Nanotechnologies de Lyon, 36 avenue Guy de Collongue, 69134 Ecully (France); Department of Physics, Chemistry and Pharmacy, University of Southern Denmark, DK-5230 Odense M (Denmark); Renault, O., E-mail: olivier.renault@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Zborowski, C. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Sorbonne Universités, UPMC Univ. Paris 06, CNRS, UMR 7614, Laboratoire de Chimie Physique-Matière et Rayonnement, F-75005, Paris (France); Université de Lyon, Institut des Nanotechnologies de Lyon, 36 avenue Guy de Collongue, 69134 Ecully (France); Department of Physics, Chemistry and Pharmacy, University of Southern Denmark, DK-5230 Odense M (Denmark); Bertrand, D.; Torres, A. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Rueff, J.-P. [Synchrotron SOLEIL, L' Orme des Merisiers Saint-Aubin, BP 48 91192, Gif-sur-Yvette Cedex (France); Sorbonne Universités, UPMC Univ. Paris 06, CNRS, UMR 7614, Laboratoire de Chimie Physique-Matière et Rayonnement, F-75005, Paris (France); Ceolin, D. [Synchrotron SOLEIL, L' Orme des Merisiers Saint-Aubin, BP 48 91192, Gif-sur-Yvette Cedex (France); Grenet, G. [Université de Lyon, Institut des Nanotechnologies de Lyon, 36 avenue Guy de Collongue, 69134 Ecully (France); Tougaard, S. [Department of Physics, Chemistry and Pharmacy, University of Southern Denmark, DK-5230 Odense M (Denmark)

    2017-04-30

    Highlights: • An effective approach for quantitative background analysis in HAXPES spectra of buried layer underneath complex overlayer structures is proposed. • The approach relies on using a weighted sum of inelastic scattering cross section of the pure layers. • The method is validated by the study of an advanced power transistor stack after successive annealing steps. • The depth distribution of crucial elements (Ti, Ga) is determined reliably at depths up to nearly 50 nm. - Abstract: Inelastic background analysis of HAXPES spectra was recently introduced as a powerful method to get access to the elemental distribution in deeply buried layers or interfaces, at depth up to 60 nm below the surface. However the accuracy of the analysis highly relies on suitable scattering cross-sections able to describe effectively the transport of photoelectrons through overlayer structures consisting of individual layers with potentially very different scattering properties. Here, we show that within Tougaard’s practical framework as implemented in the Quases-Analyze software, the photoelectron transport through thick (25–40 nm) multi-layer structures with widely different cross-sections can be reliably described with an effective cross-section in the form of a weighted sum of the individual cross-section of each layer. The high-resolution core-level analysis partly provides a guide for determining the nature of the individual cross-sections to be used. We illustrate this novel approach with the practical case of a top Al/Ti bilayer structure in an AlGaN/GaN power transistor device stack before and after sucessive annealing treatments. The analysis provides reliable insights on the Ti and Ga depth distributions up to nearly 50 nm below the surface.

  20. OVERVIEW ON BNL ASSESSMENT OF SEISMIC ANALYSIS METHODS FOR DEEPLY EMBEDDED NPP STRUCTURES

    International Nuclear Information System (INIS)

    XU, J.; COSTANTINO, C.; HOFMAYER, C.; GRAVES, H.

    2007-01-01

    A study was performed by Brookhaven National Laboratory (BNL) under the sponsorship of the U. S. Nuclear Regulatory Commission (USNRC), to determine the applicability of established soil-structure interaction analysis methods and computer programs to deeply embedded and/or buried (DEB) nuclear power plant (NPP) structures. This paper provides an overview of the BNL study including a description and discussions of analyses performed to assess relative performance of various SSI analysis methods typically applied to NPP structures, as well as the importance of interface modeling for DEB structures. There are four main elements contained in the BNL study: (1) Review and evaluation of existing seismic design practice, (2) Assessment of simplified vs. detailed methods for SSI in-structure response spectrum analysis of DEB structures, (3) Assessment of methods for computing seismic induced earth pressures on DEB structures, and (4) Development of the criteria for benchmark problems which could be used for validating computer programs for computing seismic responses of DEB NPP structures. The BNL study concluded that the equivalent linear SSI methods, including both simplified and detailed approaches, can be extended to DEB structures and produce acceptable SSI response calculations, provided that the SSI response induced by the ground motion is very much within the linear regime or the non-linear effect is not anticipated to control the SSI response parameters. The BNL study also revealed that the response calculation is sensitive to the modeling assumptions made for the soil/structure interface and application of a particular material model for the soil

  1. Bio-inspired nanobowl/nanoball structures fabricated via solvent etching/swelling on nanosphere assembly patterns

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Wan-Yi; Liu, Pang-Hsin; Wu, You [Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC (China); Chung, Yi-Chang, E-mail: ycchung@nuk.edu.tw [Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC (China); Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 701, Taiwan, ROC (China)

    2014-11-03

    Ordered self-assembled nanopatterns have attracted much attention for their ability to mimic moth-eye structures and display unique optical properties. In the study, emulsifier-free emulsion polymerization was performed to prepare polystyrene nanospheres with uniform size distribution. Various hydrophilic monomers were added to copolymerize with styrene, including 2-hydroxyethyl methacrylate, acrylic acid, and methyl acrylic acid, respectively, to enhance the self-assembling ability of nanospheres. The nanosphere suspension was injected into an air–water interface to self-assemble a nanosphere array, and then the resulting photonic crystal film was deposited on a substrate using a scooping transfer technique. The layer-by-layer scooping transfer technique can be applied to produce 2D and 3D assembled nanosphere layers on an area as large as a 4-inch wafer. The pattern of the 2D nanosphere array was attached to a UV-curable precursor surface and then encapsulated and transferred to the crosslinked resin after UV irradiation. The sample was then immersed into some solvents which could partially swell the resin surface to produce nanoball structures or etch the surface to generate nanobowl structures. The size of the as-prepared polystyrene spheres was about 360 nm, while the feature size of the nanoballs was about 230 nm after undergoing acetonitrile swelling. The facile and inexpensive technique can be applied to produce ordered nanoball patterns for various applications, such as optical coatings, superhydrophobic coatings, biophotosensors, antireflection films, dry adhesives, and so on. - Highlights: • We prepared core-shell PS nanosphere suspensions with narrow-size-distribution. • We employed a scooping technique to fabricate large-area nanosphere monolayers. • Swelling by acetonitrile formed nanoballs on a UV resin/nanosphere laminated layer. • Etching by toluene produced nanobowl on the UV resin/nanosphere laminated layer. • The parted nanoball

  2. Micromorphological characterization of adhesive interface of sound dentin and total-etch and self-etch adhesives.

    Science.gov (United States)

    Drobac, Milan; Stojanac, Igor; Ramić, Bojana; Premović, Milica; Petrović, Ljubomir

    2015-01-01

    The ultimate goal in restorative dentistry has always been to achieve strong and permanent bond between the dental tissues and filling materials. It is not easy to achieve this task because the bonding process is different for enamel and dentin-dentin is more humid and more organic than enamel. It is moisture and organic nature of dentin that make this hard tissue very complex to achieve adhesive bond. One of the first and most widely used tools for examining the adhesive bond between hard dental tissues and composite restorative materials is scanning electron microscopy. The aim of this study was scanning electron microscopy analyzes the interfacial micro morphology of total-etch and self-etch adhesives. Micro morphological characteristics of interface between total-etch adhesive (Prime & Bond NT) in combination with the corresponding composite (Ceram X Mono) were compared with those of self-etching adhesive (AdheSE One) in, combination with the corresponding composite (Tetric EvoCeram). The specimens were observed under 1000 x magnification of scanning electron microscopy (JEOL, JSM-6460 Low Vacuum). Measurement of the thickness of the hybrid layer of the examined com posite systems was performed with the software of the device used (NIH Image Analyser). Micromorphological analysis of interface showed that the hybrid layer in sound dentin was well formed, its average thickness being 2.68 microm, with a large number of resin tags and a large amount of lateral branches for specimens with a composite system Prime & Bond NT-Ceram X Mono. However, the specimens' with composite systems Adhese One-Tetric EvoCeram did not show the presence of hybrid layer and the resin tags were poorly represented. The results of this study suggest that total-etch adhesives bond better with sound dentin than self-etch adhesive.

  3. Dry and Semi-Dry Tropical Cyclones

    Science.gov (United States)

    Cronin, T.; Chavas, D. R.

    2017-12-01

    Our understanding of dynamics in our real moist atmosphere is strongly informed by idealized dry models. It is widely believed that tropical cyclones (TCs) are an intrinsically moist phenomenon - relying fundamentally on evaporation and latent heat release - yet recent numerical modeling work has found formation of dry axisymmetric tropical cyclones from a state of dry radiative-convective equilibrium. What can such "dry hurricanes" teach us about intensity, structure, and size of real moist tropical cyclones in nature? Are dry TCs even stable in 3D? What about surfaces that are nearly dry but have some latent heat flux - can they also support TCs? To address these questions, we use the SAM cloud-system resolving model to simulate radiative-convective equilibrium on a rapidly rotating f-plane, subject to constant tropospheric radiative cooling. We use a homogeneous surface with fixed temperature and with surface saturation vapor pressure scaled by a factor 0-1 relative to that over pure water - allowing for continuous variation between moist and dry limits. We also explore cases with surface enthalpy fluxes that are uniform in space and time, where partitioning between latent and sensible heat fluxes is specified directly. We find that a completely moist surface yields a TC-world where multiple vortices form spontaneously and persist for tens of days. A completely dry surface can also yield a parallel dry TC-world with many vortices that are even more stable and persistent. Spontaneous cyclogenesis, however, is impeded for a range of low to intermediate surface wetness values, and by the combination of large rotation rates and a dry surface. We discuss whether these constraints on spontaneous cyclogenesis might arise from: 1) rain evaporation in the subcloud layer limiting the range of viable surface wetness values, and 2) a natural convective Rossby number limiting the range of viable rotation rates. Finally, we discuss simulations with uniform surface enthalpy

  4. High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

    CERN Document Server

    Wuu, D S; Huang, S H; Chung, C R

    2002-01-01

    Dry etch of wafer-bonded AlGaInP/mirror/Si light-emitting diodes (LEDs) with planar electrodes was performed by high-density plasma using an inductively coupled plasma (ICP) etcher. The etching characteristics were investigated by varying process parameters such as Cl sub 2 /N sub 2 gas combination, chamber pressure, ICP power and substrate-bias power. The corresponding plasma properties (ion flux and dc bias), in situ measured by a Langmuir probe, show a strong relationship to the etch results. With a moderate etch rate of 1.3 mu m/min, a near vertical and smooth sidewall profile can be achieved under a Cl sub 2 /(Cl sub 2 +N sub 2) gas mixture of 0.5, ICP power of 800 W, substrate-bias power of 100 W, and chamber pressure of 0.67 Pa. Quantitative analysis of the plasma-induced damage was attempted to provide a means to study the mechanism of leakage current and brightness with various dc bias voltages (-110 to -328 V) and plasma duration (3-5 min) on the wafer-bonded LEDs. It is found that the reverse leaka...

  5. Uniform lateral etching of tungsten in deep trenches utilizing reaction-limited NF3 plasma process

    Science.gov (United States)

    Kofuji, Naoyuki; Mori, Masahito; Nishida, Toshiaki

    2017-06-01

    The reaction-limited etching of tungsten (W) with NF3 plasma was performed in an attempt to achieve the uniform lateral etching of W in a deep trench, a capability required by manufacturing processes for three-dimensional NAND flash memory. Reaction-limited etching was found to be possible at high pressures without ion irradiation. An almost constant etching rate that showed no dependence on NF3 pressure was obtained. The effect of varying the wafer temperature was also examined. A higher wafer temperature reduced the threshold pressure for reaction-limited etching and also increased the etching rate in the reaction-limited region. Therefore, the control of the wafer temperature is crucial to controlling the etching amount by this method. We found that the uniform lateral etching of W was possible even in a deep trench where the F radical concentration was low.

  6. Silicon etching of difluoromethane atmospheric pressure plasma jet combined with its spectroscopic analysis

    Science.gov (United States)

    Sung, Yu-Ching; Wei, Ta-Chin; Liu, You-Chia; Huang, Chun

    2018-06-01

    A capacitivly coupled radio-frequency double-pipe atmospheric-pressure plasma jet is used for etching. An argon carrier gas is supplied to the plasma discharge jet; and CH2F2 etch gas is inserted into the plasma discharge jet, near the silicon substrate. Silicon etchings rate can be efficiently-controlled by adjusting the feeding etching gas composition and plasma jet operating parameters. The features of silicon etched by the plasma discharge jet are discussed in order to spatially spreading plasma species. Electronic excitation temperature and electron density are detected by increasing plasma power. The etched silicon profile exhibited an anisotropic shape and the etching rate was maximum at the total gas flow rate of 4500 sccm and CH2F2 concentration of 11.1%. An etching rate of 17 µm/min was obtained at a plasma power of 100 W.

  7. Preliminary quantification of a shape model for etch-pits formed during natural weathering of olivine

    International Nuclear Information System (INIS)

    Nowicki, M. Anna; Velbel, Michael A.

    2011-01-01

    Many etch-pits on olivine grains occur as a pair of cone-shaped pits sharing a base, which consequently appear as diamond-shaped etch-pits in cross-section. Quantitative image analysis of back-scattered electron images establishes empirical dimensions of olivine etch-pits in naturally weathered samples from Hawaii and North Carolina. Images of naturally etched olivine were acquired from polished thin-sections by scanning electron microscopy. An average cone-radius-to-height ratio (r:h) of 1.78 was determined for diamond-shaped cross-sections of etch-pits occurring in naturally weathered olivine grains, largely consistent with previous qualitative results. Olivine etch-pit shape as represented by r:h varies from slightly more than half the average value to slightly more than twice the average. Etch-pit shape does not appear to vary systematically with etch-pit size.

  8. Inverse metal-assisted chemical etching produces smooth high aspect ratio InP nanostructures.

    Science.gov (United States)

    Kim, Seung Hyun; Mohseni, Parsian K; Song, Yi; Ishihara, Tatsumi; Li, Xiuling

    2015-01-14

    Creating high aspect ratio (AR) nanostructures by top-down fabrication without surface damage remains challenging for III-V semiconductors. Here, we demonstrate uniform, array-based InP nanostructures with lateral dimensions as small as sub-20 nm and AR > 35 using inverse metal-assisted chemical etching (I-MacEtch) in hydrogen peroxide (H2O2) and sulfuric acid (H2SO4), a purely solution-based yet anisotropic etching method. The mechanism of I-MacEtch, in contrast to regular MacEtch, is explored through surface characterization. Unique to I-MacEtch, the sidewall etching profile is remarkably smooth, independent of metal pattern edge roughness. The capability of this simple method to create various InP nanostructures, including high AR fins, can potentially enable the aggressive scaling of InP based transistors and optoelectronic devices with better performance and at lower cost than conventional etching methods.

  9. Comparison of enamel bond fatigue durability of universal adhesives and two-step self-etch adhesives in self-etch mode.

    Science.gov (United States)

    Tsujimoto, Akimasa; Barkmeier, Wayne W; Hosoya, Yumiko; Nojiri, Kie; Nagura, Yuko; Takamizawa, Toshiki; Latta, Mark A; Miyazaki, Masashi

    2017-10-01

    To comparatively evaluate universal adhesives and two-step self-etch adhesives for enamel bond fatigue durability in self-etch mode. Three universal adhesives (Clearfil Universal Bond; G-Premio Bond; Scotchbond Universal Adhesive) and three two-step self-etch adhesives (Clearfil SE Bond; Clearfil SE Bond 2; OptiBond XTR) were used. The initial shear bond strength and shear fatigue strength of the adhesive to enamel in self-etch mode were determined. The initial shear bond strengths of the universal adhesives to enamel in self-etch mode was significantly lower than those of two-step self-etch adhesives and initial shear bond strengths were not influenced by type of adhesive in each adhesive category. The shear fatigue strengths of universal adhesives to enamel in self-etch mode were significantly lower than that of Clearfil SE Bond and Clearfil SE Bond 2, but similar to that OptiBond XTR. Unlike two-step self-etch adhesives, the initial shear bond strength and shear fatigue strength of universal adhesives to enamel in self-etch mode was not influenced by the type of adhesive. This laboratory study showed that the enamel bond fatigue durability of universal adhesives was lower than Clearfil SE Bond and Clearfil SE Bond 2, similar to Optibond XTR, and was not influenced by type of adhesive, unlike two-step self-etch adhesives.

  10. Direct determination of bulk etching rate for LR-115-II solid state ...

    Indian Academy of Sciences (India)

    The thickness of the removed layer of the LR-115-II solid state nuclear track detector during etching is measured directly with a rather precise instrument. Dependence of bulk etching rate on temperature of the etching solution is investigated. It has been found that the bulk etching rate is 3.2 m/h at 60°C in 2.5 N NaOH of ...

  11. Dry vacuum pumps

    International Nuclear Information System (INIS)

    Sibuet, R

    2008-01-01

    For decades and for ultimate pressure below 1 mbar, oil-sealed Rotary Vane Pumps have been the most popular solution for a wide range of vacuum applications. In the late 80ies, Semiconductor Industry has initiated the development of the first dry roughing pumps. Today SC applications are only using dry pumps and dry pumping packages. Since that time, pumps manufacturers have developed dry vacuum pumps technologies in order to make them attractive for other applications. The trend to replace lubricated pumps by dry pumps is now spreading over many other market segments. For the Semiconductor Industry, it has been quite easy to understand the benefits of dry pumps, in terms of Cost of Ownership, process contamination and up-time. In this paper, Technology of Dry pumps, its application in R and D/industries, merits over conventional pumps and future growth scope will be discussed

  12. A plasmaless, photochemical etch process for porous organosilicate glass films

    Science.gov (United States)

    Ryan, E. Todd; Molis, Steven E.

    2017-12-01

    A plasmaless, photochemical etch process using ultraviolet (UV) light in the presence of NH3 or O2 etched porous organosilicate glass films, also called pSiCOH films, in a two-step process. First, a UV/NH3 or UV/O2 treatment removed carbon (mostly methyl groups bonded to silicon) from a pSiCOH film by demethylation to a depth determined by the treatment exposure time. Second, aqueous HF was used to selectively remove the demethylated layer of the pSiCOH film leaving the methylated layer below. UV in the presence of inert gas or H2 did not demethylate the pSiCOH film. The depth of UV/NH3 demethylation followed diffusion limited kinetics and possible mechanisms of demethylation are presented. Unlike reactive plasma processes, which contain ions that can damage surrounding structures during nanofabrication, the photochemical etch contains no damaging ions. Feasibility of the photochemical etching was shown by comparing it to a plasma-based process to remove the pSiCOH dielectric from between Cu interconnect lines, which is a critical step during air gap fabrication. The findings also expand our understanding of UV photon interactions in pSiCOH films that may contribute to plasma-induced damage to pSiCOH films.

  13. Wet-etch sequence optimisation incorporating time dependent chemical maintenance

    NARCIS (Netherlands)

    Kruif, B.J. de

    2015-01-01

    Wafer fabrication is the major cost contributor in semiconductor manufacturing. One of the steps in the fabrication is the removal of exposed layers in an automatic wet-etch station with chemicals. In time, these chemicals get polluted and their effectiveness decreases. Therefore, the chemicals in

  14. On the structure of etched ion tracks in polymers

    Czech Academy of Sciences Publication Activity Database

    Hnatowicz, Vladimír; Vacík, Jiří; Apel, P. Yu.

    2016-01-01

    Roč. 121, APR (2016), s. 106-109 ISSN 0969-806X R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) LM2011019 Institutional support: RVO:61389005 Keywords : polymers * ion tracks * track etching Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.315, year: 2016

  15. Etching characteristics of nuclear tracks in CR-39 plastics

    International Nuclear Information System (INIS)

    Tsuruta, Takao; Isobe, Ginko.

    1984-01-01

    In using CR-39 plastics for individual neutron dosimeters, changes of etching efficiency cause significant error in dose estimation. Etching efficiency is subject to a number of parameters. In this study the influences of the parameters were examined by measuring the diameters of etch-pits formed by alpha-particles and enlarged by aqueous solutions of 25-35% KOH at 55-65 0 C for 4 hr. It has been observed that diameter changes at the rate of 8.3%/ 0 C in temperature, 8.2%/wt% in concentration and -0.60%/day in time after preparation of etchant. The diameter is unaffected by the supplying of up to 280ml/l, of distilled water for evaporation of etchant or by increase up to 5g/l of CR-39 dissolved in etchant. The magnitude of possible error has been estimated by parameter as well as in general, so as to obtain suggestions for improving etching treatment. (author)

  16. Surface characterization after subaperture reactive ion beam etching

    Energy Technology Data Exchange (ETDEWEB)

    Miessler, Andre; Arnold, Thomas; Rauschenbach, Bernd [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), Leipzig (Germany)

    2010-07-01

    In usual ion beam etching processes using inert gas (Ar, Xe, Kr..) the material removal is determined by physical sputtering effects on the surface. The admixture of suitable gases (CF{sub 4}+O{sub 2}) into the glow discharge of the ion beam source leads to the generation of reactive particles, which are accelerated towards the substrate where they enhance the sputtering process by formation of volatile chemical reaction products. During the last two decades research in Reactive Ion Beam Etching (RIBE) has been done using a broad beam ion source which allows the treatment of smaller samples (diameter sample < diameter beam). Our goal was to apply a sub-aperture Kaufman-type ion source in combination with an applicative movement of the sample with respect to the source, which enables us to etch areas larger than the typical lateral dimensions of the ion beam. Concerning this matter, the etching behavior in the beam periphery plays a decisive role and has to be investigated. We use interferometry to characterize the final surface topography and XPS measurements to analyze the chemical composition of the samples after RIBE.

  17. Micromachining for Si etching using CW CO_2 laser

    International Nuclear Information System (INIS)

    Al-Hawat, Sh.; Naddaf, M.; Al-Sadat, W.; Wiess, Sh.

    2015-01-01

    Many experiments were carried out to achieve etching for silicon samples located on glass substrate (Pyrex or Quartz) using CW CO_2 laser under treating conditions which were in the case of linear scanning as: the power was 35-47 W, the number of round trips was 10-60 and the linear scanning speed was 17-75 mm/s, and in the case of fixed sample they were as: the power was 40 W and the exposure time was between 2-6 min. The obtained results were different depending on the form of etching and its quality, according to the applied treating conditions on the silicon samples, taking the treated silicon surface attached directly to the glass substrate surface or taking the opposite side of the silicon sample. The etching of the first type was easy to get, but the second one was more difficult to obtain, which requires very strong conditions. The best of these results were recorded using a quartz substrate under treating conditions: the laser power was 42.5 W, the number of round trips was 30, and the scanning speed was 75 mm/s, so the etching was limited to separate spots produced on the surface of the sample. In the all cases, the pictures of spots and lines formed on treated Si samples were taken using scanning electron microscope (SEM) for both sides of the studied samples.(author)

  18. Micromachining for Si etching using CW CO 2 laser

    International Nuclear Information System (INIS)

    Hawat, Sh.; Naddaf, M.; Al-Sadat, W.; Weiss, Sh.

    2012-08-01

    Many experiments were carried out to achieve etching for silicon samples located on glass substrate (Pyrex or Quartz) using Cw CO 2 laser under treating conditions which were in the case of linear scanning as: the power was 35-47 W, the number of round trips was 10-60 and the linear scanning speed was 17-75 mm/s, and in the case of fixed sample they were as: the power was 40 W and the exposure time was between 2-6 min. The obtained results were different depending on the form of etching and its quality, according to the applied treating conditions on the silicon samples, taking the treated silicon surface attached directly to the glass substrate surface or taking the opposite side of the silicon sample. The etching of the first type was easy to get, but the second one was more difficult to obtain, which requires very strong conditions. The best of these results were recorded using a quartz substrate under treating conditions: the laser power was 42.5 W, the number of round trips was 30, and the scanning speed was 75 mm/s, so the etching was limited to separate spots produced on the surface of the sample. In the all cases, the pictures of spots and lines formed on treated Si samples were taken using scanning electron microscope (SEM) for both sides of the studied samples. (authors)

  19. Acid Solutions for Etching Corrosion-Resistant Metals

    Science.gov (United States)

    Simmons, J. R.

    1982-01-01

    New study characterized solutions for etching austenitic stainless steels, nickel-base alloys, and titanium alloys (annealed). Solutions recommended for use remove at least 0.4 mil of metal from surface in less than an hour. Solutions do not cause intergranular attack on metals for which they are effective, when used under specified conditions.

  20. Personnel neutron dosimetry using electrochemically etched CR-39 foils

    International Nuclear Information System (INIS)

    Hankins, D.E.; Homann, S.; Westermark, J.

    1986-01-01

    A personnel neutron dosimetry system has been developed based on the electrochemical etching of CR-39 plastic at elevated temperatures. The doses obtained using this dosimeter system are more accurate than those obtained using other dosimetry systems, especially when varied neutron spectra are encountered. This Cr-39 dosimetry system does not have the severe energy dependence that exists with albedo neutron dosimeters or the fading and reading problems encountered with NTA film. The dosimetry system employs an electrochemical etch procedure that be used to process large numbers of Cr-39 dosimeters. The etch procedure is suitable for operations where the number of personnel requires that many CR-39 dosimeters be processed. Experience shows that one full-time technician can etch and evaluate 2000 foils per month. The energy response to neutrons is fairly flat from about 80 keV to 3.5 MeV, but drops by about a factor of three in the 13 to 16 MeV range. The sensitivity of the dosimetry system is about 7 tracks/cm 2 /mrem, with a background equivalent to about 8 mrem for new CR-39 foils. The limit of sensitivity is approximately 10 mrem. The dosimeter has a significant variation in directional dependence, dropping to about 20% at 90 0 . This dosimeter has been used for personnel neutron dosimetry at the Lawrence Livermore National Laboratory for more tha 18 months. 6 refs., 23 figs., 2 tabs

  1. Plasma Etching for Failure Analysis of Integrated Circuit Packages

    NARCIS (Netherlands)

    Tang, J.; Schelen, J.B.J.; Beenakker, C.I.M.

    2011-01-01

    Plastic integrated circuit packages with copper wire bonds are decapsulated by a Microwave Induced Plasma system. Improvements on microwave coupling of the system are achieved by frequency tuning and antenna modification. Plasmas with a mixture of O2 and CF4 showed a high etching rate around 2

  2. Production Relationships among Cassava Farmers in Etche Local ...

    African Journals Online (AJOL)

    The study examined production relationships among cassava farmers in Etche L.G.A. of Rivers State, Nigeria. Multistage random sampling technique was used in the data generation exercise. A total of 96 cassava farmers were randomly selected from three out of the five clans for interview using structured questionnaire.

  3. LLL development of a combined etch track: albedo dosimeter

    International Nuclear Information System (INIS)

    Griffith, R.V.; Fisher, J.C.; Harder, C.A.

    1977-01-01

    The addition of polycarbonate sheet to albedo detectors for electrochemical etching provides a simple, inexpensive way to reduce the spectral sensitivity of the personnel dosimeter without losing the albedo features of sensitivity and ease of automation. The ECEP technique also provides the dosimetrist with the potential for identifying conditions of body orientation that might otherwise lead to significant error in dosimeter evaluation

  4. Deep Reactive Ion Etching for High Aspect Ratio Microelectromechanical Components

    DEFF Research Database (Denmark)

    Jensen, Søren; Yalcinkaya, Arda Deniz; Jacobsen, S.

    2004-01-01

    A deep reactive ion etch (DRIE) process for fabrication of high aspect ratio trenches has been developed. Trenches with aspect ratios exceeding 20 and vertical sidewalls with low roughness have been demonstrated. The process has successfully been used in the fabrication of silicon-on-insulator (SOI...

  5. Sacrificial wafer bonding for planarization after very deep etching

    NARCIS (Netherlands)

    Spiering, V.L.; Spiering, Vincent L.; Berenschot, Johan W.; Elwenspoek, Michael Curt; Fluitman, J.H.J.

    A new technique is presented that provides planarization after a very deep etching step in silicon. This offers the possibility for as well resist spinning and layer patterning as realization of bridges or cantilevers across deep holes or grooves. The sacrificial wafer bonding technique contains a

  6. Funnel-type etched ion tracks in polymers

    Czech Academy of Sciences Publication Activity Database

    Fink, Dietmar; Vacík, Jiří; Hnatowicz, Vladimír; Munoz, G. H.; Alfonta, L.; Klinkovich, I.

    2010-01-01

    Roč. 165, č. 5 (2010), s. 343-361 ISSN 1042-0150 R&D Projects: GA AV ČR(CZ) KAN400480701 Institutional research plan: CEZ:AV0Z10480505 Keywords : tracks * polymers * etching Subject RIV: JJ - Other Materials Impact factor: 0.660, year: 2010

  7. Electrochemistry in anisotropic etching of silicon in alkaline solutions

    NARCIS (Netherlands)

    Nguyen, Q.D.

    2007-01-01

    Etching is the process of using an acidic or caustic chemical to cut into unprotected areas of a particular material. Initially used in the 15th century for decorating plate armor and sword blades, the metal surface (typically steel or copper) was first covered with a wax-like material. Part of the

  8. Determination of nuclear tracks parameters on sequentially etched PADC detectors

    Science.gov (United States)

    Horwacik, Tomasz; Bilski, Pawel; Koerner, Christine; Facius, Rainer; Berger, Thomas; Nowak, Tomasz; Reitz, Guenther; Olko, Pawel

    Polyallyl Diglycol Carbonate (PADC) detectors find many applications in radiation protection. One of them is the cosmic radiation dosimetry, where PADC detectors measure the linear energy transfer (LET) spectra of charged particles (from protons to heavy ions), supplementing TLD detectors in the role of passive dosemeter. Calibration exposures to ions of known LET are required to establish a relation between parameters of track observed on the detector and LET of particle creating this track. PADC TASTRAK nuclear track detectors were exposed to 12 C and 56 Fe ions of LET in H2 O between 10 and 544 keV/µm. The exposures took place at the Heavy Ion Medical Accelerator (HIMAC) in Chiba, Japan in the frame of the HIMAC research project "Space Radiation Dosimetry-Ground Based Verification of the MATROSHKA Facility" (20P-240). Detectors were etched in water solution of NaOH with three different temperatures and for various etching times to observe the appearance of etched tracks, the evolution of their parameters and the stability of the etching process. The applied etching times (and the solution's concentrations and temperatures) were: 48, 72, 96, 120 hours (6.25 N NaOH, 50 O C), 20, 40, 60, 80 hours (6.25 N NaOH, 60 O C) and 8, 12, 16, 20 hours (7N NaOH, 70 O C). The analysis of the detectors involved planimetric (2D) measurements of tracks' entrance ellipses and mechanical measurements of bulk layer thickness. Further track parameters, like angle of incidence, track length and etch rate ratio were then calculated. For certain tracks, results of planimetric measurements and calculations were also compared with results of optical track profile (3D) measurements, where not only the track's entrance ellipse but also the location of the track's tip could be directly measured. All these measurements have been performed with the 2D/3D measurement system at DLR. The collected data allow to create sets of V(LET in H2 O) calibration curves suitable for short, intermediate and

  9. Two-year water degradation of self-etching adhesives bonded to bur ground enamel

    NARCIS (Netherlands)

    Abdalla, A.I.; Feilzer, A.J.

    2009-01-01

    To evaluate the effect of water storage on the microshear bond strength to ground enamel of three "all-in-one" self-etch adhesives: Futurabond DC, Clearfil S Tri Bond and Hybrid bond; a self-etching primer; Clearfil SE Bond and an etch-and-rinse adhesive system, Admira Bond. Sixty human molars were

  10. Consideration of correlativity between litho and etching shape

    Science.gov (United States)

    Matsuoka, Ryoichi; Mito, Hiroaki; Shinoda, Shinichi; Toyoda, Yasutaka

    2012-03-01

    We developed an effective method for evaluating the correlation of shape of Litho and Etching pattern. The purpose of this method, makes the relations of the shape after that is the etching pattern an index in wafer same as a pattern shape on wafer made by a lithography process. Therefore, this method measures the characteristic of the shape of the wafer pattern by the lithography process and can predict the hotspot pattern shape by the etching process. The method adopts a metrology management system based on DBM (Design Based Metrology). This is the high accurate contouring created by an edge detection algorithm used wafer CD-SEM. Currently, as semiconductor manufacture moves towards even smaller feature size, this necessitates more aggressive optical proximity correction (OPC) to drive the super-resolution technology (RET). In other words, there is a trade-off between highly precise RET and lithography management, and this has a big impact on the semiconductor market that centers on the semiconductor business. 2-dimensional shape of wafer quantification is important as optimal solution over these problems. Although 1-dimensional shape measurement has been performed by the conventional technique, 2-dimensional shape management is needed in the mass production line under the influence of RET. We developed the technique of analyzing distribution of shape edge performance as the shape management technique. In this study, we conducted experiments for correlation method of the pattern (Measurement Based Contouring) as two-dimensional litho and etch evaluation technique. That is, observation of the identical position of a litho and etch was considered. It is possible to analyze variability of the edge of the same position with high precision.

  11. Longitudinal target-spin azimuthal asymmetry in Deeply-Virtual Compton Scattering

    International Nuclear Information System (INIS)

    Kopytin, M.

    2006-01-01

    As a generalization of the usual Parton Distribution Functions (PDFs) Generalized Parton Distributions (GPDs), introduced a decade ago, contain additional information about quark and gluon distributions in the plane transverse to the direction of motion of the nucleon. Strong interest in GPDs was triggered by the work of X. Ji who demonstrated that in the forward limit GPDs can give information about the total angular momentum carried by quarks (gluons) in the nucleon. The hard exclusive electroproduction of a real photon, called Deeply Virtual Compton Scattering (DVCS), appears to be the theoretically cleanest way to access GPDs experimentally. This process has a final state identical to that of the Bethe-Heitler (BH) process where the photon is radiated from either incoming or outgoing lepton. Both processes are experimentally indistinguishable as their amplitudes interfere. The interference term involves linearly the amplitudes of the DVCS process giving access to GPDs. In this thesis results from HERMES are reported on an azimuthal asymmetry with respect to the spin of the proton target, which is attributed to the interference between the Bethe-Heitler process and the DVCS process. The asymmetry, also referred to as the longitudinal target-spin asymmetry (LTSA), gives access mainly to the polarized GPD H. The kinematic dependences of the LTSA on t, x B and Q 2 are measured and compared with the corresponding measurements on the deuteron. The results are compared with theoretical calculations and with the recent CLAS measurements. The data, used for analysis in this thesis, have been accumulated by the HERMES experiment at DESY scattering the HERA 27.6 GeV positron beam off hydrogen and deuterium gas targets. Additionally, production tests of the HELIX128 3.0 chip are discussed. The chip is the frontend readout chip of the silicon recoil detector. The latter is a part of the HERMES recoil detector, which is built around the target area in order to detect the

  12. Overburden stripping from deeply buried orebodies by controlled nuclear explosive casting

    Energy Technology Data Exchange (ETDEWEB)

    Saperstein, L W; Mishra, R [Department of Mining, The Pennsylvania State University, University Park, PA (United States)

    1970-05-15

    Previous schemes to strip the overburden from a deeply-buried orebody by nuclear explosives have been hampered by various constraints. These are the notions that surface topography should slope in the desired direction to facilitate casting; that the orebody should be stripped all at once, meaning that an unsafe and unnaturally high yield will be detonated; or that the overburden be broken and cast, in a manner akin to conventional blasting, with a series of explosions linked by milli-second delays, such delays being an unproven and, perhaps non-permissible technology; and, finally, that the schemes leave an excessive amount of overburden to be removed by conventional means. It is proposed that deep orebodies, idealized by a 250-ft. thick copper porphyry under 600 feet of cover, be stripped in successive rows, using available row-charge technology. A first row, of greater magnitude than those succeeding, is used to expose the orebody. The second row is placed so as to throw overburden into the void created by the first. All rows are placed so as not to damage the ore. Except for the first row, all rows utilize directed throwing. After a row is detonated, the ore beneath it would be removed by conventional means. The void thus created would provide space for the successive row to fire into. Further, the additional free-face provided by the void imparts a major direction to the ejecta. Because of the directed nature of the throw, ore removal does not have to proceed directly beneath the row slope. Advantages to this scheme are its adaptability to terrain; its reduction in overburden to be removed by conventional methods; its increased speed in uncovering ore; its reduction of unit costs; audits adaptability to production rates. An example, utilizing the idealized orebody shows that production of ore can begin within a year of project approval versus four or five years for the same orebody developed conventionally; that no more than eight percent of the overburden has

  13. Serum and peritoneal interleukin-33 levels are elevated in deeply infiltrating endometriosis.

    Science.gov (United States)

    Santulli, Pietro; Borghese, Bruno; Chouzenoux, Sandrine; Vaiman, Daniel; Borderie, Didier; Streuli, Isabelle; Goffinet, François; de Ziegler, Dominique; Weill, Bernard; Batteux, Frédéric; Chapron, Charles

    2012-07-01

    Interleukin 33 (IL-33) is a cytokine involved in fibrotic disorders. We have analyzed IL-33 levels in the sera and peritoneal fluids of women with various forms of endometriosis and investigated the correlation with disease activity. We conducted a prospective laboratory study in a tertiary-care university hospital between January 2005 and December 2010. Five hundred and ten women with histologically proven endometriosis and 132 endometriosis-free controls were enrolled in this study. Complete surgical exploration of the abdominopelvic cavity was performed in each patient. Blood samples and peritoneal fluids were obtained before and during surgical procedures, respectively. IL-33 was measured by an enzyme-linked immunosorbent assay in sera and peritoneal fluids, and the concentrations correlated with the extent and the severity of endometriotic lesions. IL-33 was detectable in 23.1% of serum samples from all 642 women studied and 75.0% of peritoneal fluid samples studied (44 women with endometriosis and 36 controls). Serum IL-33 was higher in deeply infiltrating endometriosis (DIE) (median, 104.9 pg/ml; range, 8.0-104.9) than in endometriosis-free women (median, 61.3 pg/ml; range, 7.5-526.0; P = 0.022) or in women affected by superficial endometriosis (median, 36.8 pg/ml; range, 7.5-179.0; P Peritoneal IL-33 was higher in DIE than in endometriosis-free women (median, 642.0 pg/ml; range, 25.9-3350.6 versus median, 194.2 pg/ml; range, 12.7-1818.2, respectively; P = 0.003). We found positive correlations between serum IL-33 concentration and intensity of dysmenorrhea (r = 0.174; P = 0.028) and gastrointestinal symptoms (r = 0.199; P = 0.027), total number of DIE lesions (r = 0.224; P = 0.016) and the worst DIE lesion (r = 0.299; P endometriosis and principally in DIE. Elevated serum IL-33 is correlated with the intensity of preoperative painful symptoms, and with the extent and severity of the DIE. IL-33 may be considered as a novel cytokine involved in the

  14. Longitudinal target-spin azimuthal asymmetry in Deeply-Virtual Compton Scattering

    Energy Technology Data Exchange (ETDEWEB)

    Kopytin, M.

    2006-08-22

    As a generalization of the usual Parton Distribution Functions (PDFs) Generalized Parton Distributions (GPDs), introduced a decade ago, contain additional information about quark and gluon distributions in the plane transverse to the direction of motion of the nucleon. Strong interest in GPDs was triggered by the work of X. Ji who demonstrated that in the forward limit GPDs can give information about the total angular momentum carried by quarks (gluons) in the nucleon. The hard exclusive electroproduction of a real photon, called Deeply Virtual Compton Scattering (DVCS), appears to be the theoretically cleanest way to access GPDs experimentally. This process has a final state identical to that of the Bethe-Heitler (BH) process where the photon is radiated from either incoming or outgoing lepton. Both processes are experimentally indistinguishable as their amplitudes interfere. The interference term involves linearly the amplitudes of the DVCS process giving access to GPDs. In this thesis results from HERMES are reported on an azimuthal asymmetry with respect to the spin of the proton target, which is attributed to the interference between the Bethe-Heitler process and the DVCS process. The asymmetry, also referred to as the longitudinal target-spin asymmetry (LTSA), gives access mainly to the polarized GPD H. The kinematic dependences of the LTSA on t, x{sub B} and Q{sup 2} are measured and compared with the corresponding measurements on the deuteron. The results are compared with theoretical calculations and with the recent CLAS measurements. The data, used for analysis in this thesis, have been accumulated by the HERMES experiment at DESY scattering the HERA 27.6 GeV positron beam off hydrogen and deuterium gas targets. Additionally, production tests of the HELIX128 3.0 chip are discussed. The chip is the frontend readout chip of the silicon recoil detector. The latter is a part of the HERMES recoil detector, which is built around the target area in order to

  15. Overburden stripping from deeply buried orebodies by controlled nuclear explosive casting

    International Nuclear Information System (INIS)

    Saperstein, L.W.; Mishra, R.

    1970-01-01

    Previous schemes to strip the overburden from a deeply-buried orebody by nuclear explosives have been hampered by various constraints. These are the notions that surface topography should slope in the desired direction to facilitate casting; that the orebody should be stripped all at once, meaning that an unsafe and unnaturally high yield will be detonated; or that the overburden be broken and cast, in a manner akin to conventional blasting, with a series of explosions linked by milli-second delays, such delays being an unproven and, perhaps non-permissible technology; and, finally, that the schemes leave an excessive amount of overburden to be removed by conventional means. It is proposed that deep orebodies, idealized by a 250-ft. thick copper porphyry under 600 feet of cover, be stripped in successive rows, using available row-charge technology. A first row, of greater magnitude than those succeeding, is used to expose the orebody. The second row is placed so as to throw overburden into the void created by the first. All rows are placed so as not to damage the ore. Except for the first row, all rows utilize directed throwing. After a row is detonated, the ore beneath it would be removed by conventional means. The void thus created would provide space for the successive row to fire into. Further, the additional free-face provided by the void imparts a major direction to the ejecta. Because of the directed nature of the throw, ore removal does not have to proceed directly beneath the row slope. Advantages to this scheme are its adaptability to terrain; its reduction in overburden to be removed by conventional methods; its increased speed in uncovering ore; its reduction of unit costs; audits adaptability to production rates. An example, utilizing the idealized orebody shows that production of ore can begin within a year of project approval versus four or five years for the same orebody developed conventionally; that no more than eight percent of the overburden has

  16. Role of Feshbach resonances in enhancing the production of deeply bound ultracold LiRb molecules with laser pulses

    Science.gov (United States)

    Gacesa, Marko; Ghosal, Subhas; Côté, Robin

    2010-03-01

    We investigate the possibility of forming deeply bound LiRb molecules in a two-color photoassociation experiment. Ultracold ^6Li and ^87Rb atoms colliding in the vicinity of a magnetic Feshbach resonance are photoassociated into an excited electronic state. A wavepacket is then formed by exciting a few vibrational levels of the excited state and allowed to propagate. We calculate the time-dependent overlaps between the wave packet and the lowest vibrational levels of the ground state. After the optimal overlap is obtained we use the second laser pulse to dump the wave packet and efficiently populate the deeply bound ro-vibrational levels of ^6Li^87Rb in the ground state. The resulting combination of Feshbach-optimized photoassociation (FOPA) with the time-dependent pump-dump approach will produce a large number of stable ultracold molecules in the ground state. This technique is general and applicable to other systems.

  17. Infinitely high etch selectivity during CH4/H2/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask

    International Nuclear Information System (INIS)

    Kim, D.Y.; Ko, J.H.; Park, M.S.; Lee, N.-E.

    2008-01-01

    Under certain conditions during ITO etching using CH 4 /H 2 /Ar inductively coupled plasmas, the etch rate selectivity of ITO to photoresist (PR) was infinitely high because the ITO films continued to be etched, but a net deposition of the α-C:H layer occurred on the top of the PR. Analyses of plasmas and etched ITO surfaces suggested that the continued consumption of the carbon and hydrogen in the deposited α-C:H layer by their chemical reaction with In and Sn atoms in the ITO resulting in the generation of volatile metal-organic etch products and by the ion-enhanced removal of the α-C:H layer presumably play important roles in determining the ITO etch rate and selectivity

  18. Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures using a Time-Multiplexed Etch-Passivate Process

    Science.gov (United States)

    Evans, Laura J.; Beheim, Glenn M.

    2006-01-01

    High aspect ratio silicon carbide (SiC) microstructures are needed for microengines and other harsh environment micro-electro-mechanical systems (MEMS). Previously, deep reactive ion etching (DRIE) of low aspect ratio (AR less than or = 1) deep (greater than 100 micron) trenches in SiC has been reported. However, existing DRIE processes for SiC are not well-suited for definition of high aspect ratio features because such simple etch-only processes provide insufficient control over sidewall roughness and slope. Therefore, we have investigated the use of a time-multiplexed etch-passivate (TMEP) process, which alternates etching with polymer passivation of the etch sidewalls. An optimized TMEP process was used to etch high aspect ratio (AR greater than 5) deep (less than 100 micron) trenches in 6H-SiC. Power MEMS structures (micro turbine blades) in 6H-SiC were also fabricated.

  19. The effects of pre-etching time on the characteristic responses of electrochemically etched CR-39 neutron dosimeters

    International Nuclear Information System (INIS)

    Sohrabi, M.; Khoshnoodi, M.

    1986-01-01

    The effects of pre-etching time (PET) or duration of etching of fast-neutron-induced-recoil tracks in CR-39 in 6N KOH at 60 0 C on electrochemical etching neutron characteristic responses; i.e. sensitivity and mean recoil track diameter (MRTD) versus KOH normality up to 18N are investigated in this paper. Six sets of responses for PETs of 0, 1, 2, 3, 4, and 5 hours were obtained by using our new multi-chamber ECE (MCECE) system which reduced total operation time to about 6% of the time usually required when single-chamber ECE systems are used. The sensitivity response for zero PET showed a broad plateau and a high sensitivity low-LET peak around 16N. By increasing PET, another peak was also developed around 5N leading to 'double-humped' responses with two maximums around 5N and 16N, and a minimum around 11N. On the other hand, the MRTD responses for all PETs studied showed the same general trend with maximums around 11N. In this paper, shape of tracks under different conditions are also investigated, new optimum conditions such as KOH concentrations of 5, 11, and 15N at 25 0 C, with or without pre-etching, are recommended for tracks of lower-LET recoils including possibly protons, and alpha particle tracks over a broad energy range, and the efficiency of the MCECE system is also demonstrated. (author)

  20. Laparoscopic excision of rectosigmoid endometriotic plaque and cul de sac obliteration in deeply infiltrating endometriosis: a case report.

    Science.gov (United States)

    Fragulidis, G P; Oreopulu, F V; Vezakis, A; Sofoudis, C; Kalambokas, E; Koutoulidis, V; Vlahos, N F

    2016-01-01

    Endometriosis represents a main cause of infertility and pelvic pain affecting 3-43% among reproductive age women. Deep pelvic endometriosis is defined as subperitoneal infiltration of endometrial implants in the uterosacral ligaments, rectum, rectovaginal septum, vagina or bladder. The authors present a case of a 29-year-old patient who underwent laparoscopic excision of extensive endometriotic plaque in rectovaginal septum accompanied with deeply infiltrating endometriosis (DIE) and chronic pelvic pain (CPP).

  1. Deeply inelastic collisions as a source of intermediate mass fragments at E/A = 27 MeV

    International Nuclear Information System (INIS)

    Borderie, B.; Montoya, M.; Rivet, M.F.; Jouan, D.; Cabot, C.; Fuchs, H.; Gardes, D.; Gauvin, H.; Jacquet, D.; Monnet, F.

    1988-01-01

    Intermediate-mass fragments detected in coincidence with heavy residues were measured in 40 Ar induced reactions on Ag at E/A = 27 MeV. From the observed characteristics, it is inferred that intermediate-mass fragments associated with the so-called intermediate-velocity source come mainly from deeply inelastic collisions occurring after or at the same time as preequilibrium particle emission. (orig.)

  2. Maximum Correntropy Unscented Kalman Filter for Ballistic Missile Navigation System based on SINS/CNS Deeply Integrated Mode.

    Science.gov (United States)

    Hou, Bowen; He, Zhangming; Li, Dong; Zhou, Haiyin; Wang, Jiongqi

    2018-05-27

    Strap-down inertial navigation system/celestial navigation system ( SINS/CNS) integrated navigation is a high precision navigation technique for ballistic missiles. The traditional navigation method has a divergence in the position error. A deeply integrated mode for SINS/CNS navigation system is proposed to improve the navigation accuracy of ballistic missile. The deeply integrated navigation principle is described and the observability of the navigation system is analyzed. The nonlinearity, as well as the large outliers and the Gaussian mixture noises, often exists during the actual navigation process, leading to the divergence phenomenon of the navigation filter. The new nonlinear Kalman filter on the basis of the maximum correntropy theory and unscented transformation, named the maximum correntropy unscented Kalman filter, is deduced, and the computational complexity is analyzed. The unscented transformation is used for restricting the nonlinearity of the system equation, and the maximum correntropy theory is used to deal with the non-Gaussian noises. Finally, numerical simulation illustrates the superiority of the proposed filter compared with the traditional unscented Kalman filter. The comparison results show that the large outliers and the influence of non-Gaussian noises for SINS/CNS deeply integrated navigation is significantly reduced through the proposed filter.

  3. Maximum Correntropy Unscented Kalman Filter for Ballistic Missile Navigation System based on SINS/CNS Deeply Integrated Mode

    Directory of Open Access Journals (Sweden)

    Bowen Hou

    2018-05-01

    Full Text Available Strap-down inertial navigation system/celestial navigation system ( SINS/CNS integrated navigation is a high precision navigation technique for ballistic missiles. The traditional navigation method has a divergence in the position error. A deeply integrated mode for SINS/CNS navigation system is proposed to improve the navigation accuracy of ballistic missile. The deeply integrated navigation principle is described and the observability of the navigation system is analyzed. The nonlinearity, as well as the large outliers and the Gaussian mixture noises, often exists during the actual navigation process, leading to the divergence phenomenon of the navigation filter. The new nonlinear Kalman filter on the basis of the maximum correntropy theory and unscented transformation, named the maximum correntropy unscented Kalman filter, is deduced, and the computational complexity is analyzed. The unscented transformation is used for restricting the nonlinearity of the system equation, and the maximum correntropy theory is used to deal with the non-Gaussian noises. Finally, numerical simulation illustrates the superiority of the proposed filter compared with the traditional unscented Kalman filter. The comparison results show that the large outliers and the influence of non-Gaussian noises for SINS/CNS deeply integrated navigation is significantly reduced through the proposed filter.

  4. Influence of water storage on fatigue strength of self-etch adhesives.

    Science.gov (United States)

    Takamizawa, Toshiki; Barkmeier, Wayne W; Tsujimoto, Akimasa; Scheidel, Donal D; Watanabe, Hidehiko; Erickson, Robert L; Latta, Mark A; Miyazaki, Masashi

    2015-12-01

    The purpose of this study was to determine enamel and dentin bond durability after long-term water storage using self-etch adhesives. Two single step self-etch adhesives (SU, Scotchbond Universal and GB, G-ӕnial Bond) and a two-step self-etch adhesive (OX, OptiBond XTR) were used. The shear bond strength (SBS) and shear fatigue strength (FS) of the enamel and dentin were obtained with and without phosphoric acid pre-etching prior to application of the adhesives. The specimens were stored in distilled water at 37 °C for 24 h, 6 months, and one year. A staircase method was used to determine the FS using a frequency of 10 Hz for 50,000 cycles or until failure occurred. The SBS and FS of enamel bonds were significantly higher with pre-etching, when compared to no pre-etching for the same water storage period. The FS of dentin bonds with pre-etching tended to decrease relative to no pre-etching at the same storage period. For the one year storage period, SU and GB with pre-etching showed significantly lower FS values than the groups without pre-etching. The influence of water storage on FS of the self-etch adhesives was dependent on the adhesive material, storage period and phosphoric acid pre-etching of the bonding site. Phosphoric acid pre-etching of enamel improves the effectiveness of self-etch adhesive systems. Inadvertent contact of phosphoric acid on dentin appears to reduce the ability of self-etch adhesives to effectively bond resin composite materials. Copyright © 2015 Elsevier Ltd. All rights reserved.

  5. Optimization of silver-assisted nano-pillar etching process in silicon

    Science.gov (United States)

    Azhari, Ayu Wazira; Sopian, Kamaruzzaman; Desa, Mohd Khairunaz Mat; Zaidi, Saleem H.

    2015-12-01

    In this study, a respond surface methodology (RSM) model is developed using three-level Box-Behnken experimental design (BBD) technique. This model is developed to investigate the influence of metal-assisted chemical etching (MACE) process variables on the nanopillars profiles created in single crystalline silicon (Si) substrate. Design-Expert® software (version 7.1) is employed in formulating the RSM model based on five critical process variables: (A) concentration of silver (Ag), (B) concentration of hydrofluoric acid (HF), (C) concentration of hydrogen peroxide (H2O2), (D) deposition time, and (E) etching time. This model is supported by data from 46 experimental configurations. Etched profiles as a function of lateral etching rate, vertical etching rate, height, size and separation between the Si trenches and etching uniformity are characterized using field emission scanning electron microscope (FE-SEM). A quadratic regression model is developed to correlate critical process variables and is validated using the analysis of variance (ANOVA) methodology. The model exhibits near-linear dependence of lateral and vertical etching rates on both the H2O2 concentration and etching time. The predicted model is in good agreement with the experimental data where R2 is equal to 0.80 and 0.67 for the etching rate and lateral etching respectively. The optimized result shows minimum lateral etching with the average pore size of about 69 nm while the maximum etching rate is estimated at around 360 nm/min. The model demonstrates that the etching process uniformity is not influenced by either the etchant concentration or the etching time. This lack of uniformity could be attributed to the surface condition of the wafer. Optimization of the process parameters show adequate accuracy of the model with acceptable percentage errors of 6%, 59%, 1.8%, 38% and 61% for determination of the height, separation, size, the pore size and the etching rate respectively.

  6. Unveiling the wet chemical etching characteristics of polydimethylsiloxane film for soft micromachining applications

    International Nuclear Information System (INIS)

    Kakati, A; Maji, D; Das, S

    2017-01-01

    Micromachining of a polydimethylsiloxane (PDMS) microstructure by wet chemical etching is explored for microelectromechanical systems (MEMS) and microfluidic applications. A 100 µ m thick PDMS film was patterned with different microstructure designs by wet chemical etching using a N-methyl-2-pyrrolidone (C 16 H 36 FN) and tetra-n-butylammonium fluoride (C 5 H 9 NO) mixture solution with 3:1 volume ratio after lithography for studying etching characteristics. The patterning parameters, such as etch rate, surface roughness, pH of etchant solution with time, were thoroughly investigated. A detailed study of surface morphology with etching time revealed nonlinear behaviour of the PDMS surface roughness and etch rate. A maximum rate of 1.45 µ m min −1 for 10 min etching with surface roughness of 360 nm was achieved. A new approach of wet chemical etching with pH controlled doped etchant was introduced for lower surface roughness of etched microstructures, and a constant etch rate during etching. Variation of the etching rate and surface roughness by pH controlled etching was performed by doping 5–15 gm l −1 of silicic acid (SiO 2xH2 O) into the traditional etchant solution. PDMS etching by silicic acid doped etchant solution showed a reduction in surface roughness from 400 nm to 220 nm for the same 15 µ m etching. This study is beneficial for micromachining of various MEMS and microfluidic structures such as micropillars, microchannels, and other PDMS microstructures. (paper)

  7. An evaluation of shear bond strength of self-etch adhesive on pre-etched enamel: an in vitro study.

    Science.gov (United States)

    Rao, Bhadra; Reddy, Satti Narayana; Mujeeb, Abdul; Mehta, Kanchan; Saritha, G

    2013-11-01

    To determine the shear bond strength of self-etch adhesive G-bond on pre-etched enamel. Thirty caries free human mandibular premolars extracted for orthodontic purpose were used for the study. Occlusal surfaces of all the teeth were flattened with diamond bur and a silicon carbide paper was used for surface smoothening. The thirty samples were randomly grouped into three groups. Three different etch systems were used for the composite build up: group 1 (G-bond self-etch adhesive system), group 2 (G-bond) and group 3 (Adper single bond). Light cured was applied for 10 seconds with a LED unit for composite buildup on the occlusal surface of each tooth with 8 millimeters (mm) in diameter and 3 mm in thickness. The specimens in each group were tested in shear mode using a knife-edge testing apparatus in a universal testing machine across head speed of 1 mm/ minute. Shear bond strength values in Mpa were calculated from the peak load at failure divided by the specimen surface area. The mean shear bond strength of all the groups were calculated and statistical analysis was carried out using one-way Analysis of Variance (ANOVA). The mean bond strength of group 1 is 15.5 Mpa, group 2 is 19.5 Mpa and group 3 is 20.1 Mpa. Statistical analysis was carried out between the groups using one-way ANOVA. Group 1 showed statistically significant lower bond strength when compared to groups 2 and 3. No statistical significant difference between groups 2 and 3 (p adhesive G-bond showed increase in shear bond strength on pre-etched enamel.

  8. Drying and energy technologies

    CERN Document Server

    Lima, A

    2016-01-01

    This book provides a comprehensive overview of essential topics related to conventional and advanced drying and energy technologies, especially motivated by increased industry and academic interest. The main topics discussed are: theory and applications of drying, emerging topics in drying technology, innovations and trends in drying, thermo-hydro-chemical-mechanical behaviors of porous materials in drying, and drying equipment and energy. Since the topics covered are inter- and multi-disciplinary, the book offers an excellent source of information for engineers, energy specialists, scientists, researchers, graduate students, and leaders of industrial companies. This book is divided into several chapters focusing on the engineering, science and technology applied in essential industrial processes used for raw materials and products.

  9. Morphological Evaluation of the Adhesive/Enamel interfaces of Two-step Self-etching Adhesives and Multimode One-bottle Self-etching Adhesives.

    Science.gov (United States)

    Sato, Takaaki; Takagaki, Tomohiro; Matsui, Naoko; Hamba, Hidenori; Sadr, Alireza; Nikaido, Toru; Tagami, Junji

    To evaluate the acid-base resistant zone (ABRZ) at the adhesive/enamel interface of self-etching adhesives with or without prior phosphoric acid etching. Four adhesives were used in 8 groups: Clearfil SE Bond (SEB), Optibond XTR (XTR), Scotchbond Universal Adhesive (SBU), and Clearfil BOND SE ONE (ONE) without prior phosphoric-acid etching, and each adhesive with phosphoric acid etching for 10 s (P-SEB, P-XTR, P-SBU and P-ONE, respectively). After application of self-etching adhesives on ground enamel surfaces of human teeth, a flowable composite was placed. For observation of the acid-base resistant zone (ABRZ), the bonded interface was exposed to demineralizing solution (pH 4.5) for 4.5 h, followed by 5% NaOCl with ultrasonication for 20 min. After the acid-base challenge, morphological attributes of the interface were observed using SEM. ABRZ formation was confirmed in all groups. The funnel-shaped erosion beneath the interface was present in SBU and ONE, where nearly 10 to 15 μm of enamel was dissolved. With phosphoric acid etching, the ABRZs were obviously thicker compared with no phosphoric acid etching. Enamel beneath the bonding interface was more susceptible to acid dissolution in SBU and ONE. In the case of the one-bottle self-etching adhesives and universal adhesives that intrinsically have higher pH values, enamel etching should be recommended to improve the interfacial quality.

  10. Ambient Dried Aerogels

    Science.gov (United States)

    Jones, Steven M.; Paik, Jong-Ah

    2013-01-01

    A method has been developed for creating aerogel using normal pressure and ambient temperatures. All spacecraft, satellites, and landers require the use of thermal insulation due to the extreme environments encountered in space and on extraterrestrial bodies. Ambient dried aerogels introduce the possibility of using aerogel as thermal insulation in a wide variety of instances where supercritically dried aerogels cannot be used. More specifically, thermoelectric devices can use ambient dried aerogel, where the advantages are in situ production using the cast-in ability of an aerogel. Previously, aerogels required supercritical conditions (high temperature and high pressure) to be dried. Ambient dried aerogels can be dried at room temperature and pressure. This allows many materials, such as plastics and certain metal alloys that cannot survive supercritical conditions, to be directly immersed in liquid aerogel precursor and then encapsulated in the final, dried aerogel. Additionally, the metalized Mylar films that could not survive the previous methods of making aerogels can survive the ambient drying technique, thus making multilayer insulation (MLI) materials possible. This results in lighter insulation material as well. Because this innovation does not require high-temperature or high-pressure drying, ambient dried aerogels are much less expensive to produce. The equipment needed to conduct supercritical drying costs many tens of thousands of dollars, and has associated running expenses for power, pressurized gasses, and maintenance. The ambient drying process also expands the size of the pieces of aerogel that can be made because a high-temperature, high-pressure system typically has internal dimensions of up to 30 cm in diameter and 60 cm in height. In the case of this innovation, the only limitation on the size of the aerogels produced would be in the ability of the solvent in the wet gel to escape from the gel network.

  11. Power ultrasound irradiation during the alkaline etching process of the 2024 aluminum alloy

    Science.gov (United States)

    Moutarlier, V.; Viennet, R.; Rolet, J.; Gigandet, M. P.; Hihn, J. Y.

    2015-11-01

    Prior to any surface treatment on an aluminum alloy, a surface preparation is necessary. This commonly consists in performing an alkaline etching followed by acid deoxidizing. In this work, the use of power ultrasound irradiation during the etching step on the 2024 aluminum alloy was studied. The etching rate was estimated by weight loss, and the alkaline film formed during the etching step was characterized by glow discharge optical emission spectrometry (GDOES) and scanning electron microscope (SEM). The benefit of power ultrasound during the etching step was confirmed by pitting potential measurement in NaCl solution after a post-treatment (anodizing).

  12. Effect of track etch rate on geometric track characteristics for polymeric track detectors

    International Nuclear Information System (INIS)

    Abdel-Naby, A.A.; El-Akkad, F.A.

    2001-01-01

    Analysis of the variable track etch rate on geometric track characteristic for polymeric track detectors has been applied to the case of LR-155 II SSNTD. Spectrometric characteristics of low energy alpha particles response by the polymeric detector have been obtained. The track etching kinematics theory of development of minor diameter of the etched tracks has been applied. The calculations show that, for this type of detector, the energy dependence of the minor track diameter d is linear for small-etched removal layer h. The energy resolution gets better for higher etched removal layer

  13. Uniformly thinned optical fibers produced via HF etching with spectral and microscopic verification.

    Science.gov (United States)

    Bal, Harpreet K; Brodzeli, Zourab; Dragomir, Nicoleta M; Collins, Stephen F; Sidiroglou, Fotios

    2012-05-01

    A method for producing uniformly thinned (etched) optical fibers is described, which can also be employed to etch optical fibers containing a Bragg grating (FBG) uniformly for evanescent-field-based sensing and other applications. Through a simple modification of this method, the fabrication of phase-shifted FBGs based on uneven etching is also shown. The critical role of how a fiber is secured is shown, and the success of the method is illustrated, by differential interference contrast microscopy images of uniformly etched FBGs. An etched FBG sensor for the monitoring of the refractive index of different glycerin solutions is demonstrated.

  14. Inflammation in dry eye.

    Science.gov (United States)

    Stern, Michael E; Pflugfelder, Stephen C

    2004-04-01

    Dry eye is a condition of altered tear composition that results from a diseased or dysfunctional lacrimal functional unit. Evidence suggests that inflammation causes structural alterations and/or functional paralysis of the tear-secreting glands. Changes in tear composition resulting from lacrimal dysfunction, increased evaporation and/or poor clearance have pro-inflammatory effects on the ocular surface. This inflammation is responsible in part for the irritation symptoms, ocular surface epithelial disease, and altered corneal epithelial barrier function in dry eye. Anti-inflammatory therapies for dry eye target one or more of the inflammatory mediators/pathways that have been identified in dry eye.

  15. Drying hardwood lumber

    Energy Technology Data Exchange (ETDEWEB)

    Chow, A T

    1988-11-14

    Dried lumber is a high-value-added product, especially when it is of high quality. Lumber damaged during the drying operation can represent substantial lost revenue. It has been demonstrated that dehumidification kilns can improve lumber quality, and reduce energy consumption over conventional drying methods. A summary of the literature on drying hardwood lumber, particularly using heat pump dehumidification, has been prepared to allow the information to be readily accessible to Ontario Hydro personnel who work with customers in the lumber industry. For that purpose, this summary has been prepared from the perspective of the customer, a dry kiln operator. Included are brief descriptions of drying schedules, precautions needed to minimize drying defects in the lumber, and rules-of-thumb for selecting and estimating the capital cost of the drying equipment. A selection of drying schedules and moisture contents of green lumber, a glossary of lumber defects and brief descriptions of the possible preventive measures are also included. 10 refs., 8 figs., 4 tabs.

  16. Potential Beneficiaries of the Obama Administration’s Executive Action Programs Deeply Embedded in US Society

    Directory of Open Access Journals (Sweden)

    Donald Kerwin

    2016-03-01

    Full Text Available The Obama administration has developed two broad programs to defer immigration enforcement actions against undocumented persons living in the United States: (1 Deferred Action for Parents of Americans and Lawful Permanent Residents (DAPA; and (2 Deferred Action for Childhood Arrivals (DACA. The DACA program, which began in August 2012, was expanded on November 20, 2014. DAPA and the DACA expansion (hereinafter referred to as “DACA-plus” are currently under review by the US Supreme Court and subject to an active injunction.This paper offers a statistical portrait of the intended direct beneficiaries of DAPA, DACA, and DACA-plus. It finds that potential DAPA, DACA, and DACA-plus recipients are deeply embedded in US society, with high employment rates, extensive US family ties, long tenure, and substantial rates of English-language proficiency. The paper also notes various groups that would benefit indirectly from the full implementation of DAPA and DACA or, conversely, would suffer from the removal of potential beneficiaries of these programs. For example, all those who would rely on the retirement programs of the US government will benefit from the high employment rates and relative youth of the DACA population, while many US citizens who rely on the income of a DAPA-eligible parent would fall into poverty or extreme poverty should that parent be removed from the United States.This paper offers an analysis of potential DAPA and DACA beneficiaries. In an earlier study, the authors made the case for immigration reform based on long-term trends related to the US undocumented population, including potential DAPA and DACA beneficiaries (Warren and Kerwin 2015. By contrast, this paper details the degree to which these populations have become embedded in US society. It also compares persons eligible for the original DACA program with those eligible for DACA-plus.As stated, the great majority of potential DAPA and DACA recipients enjoy strong family

  17. Geochemical soil sampling for deeply-buried mineralized breccia pipes, northwestern Arizona

    Science.gov (United States)

    Wenrich, K.J.; Aumente-Modreski, R. M.

    1994-01-01

    degree of anomalousness, named the "correlation value", was used to rank collapse features by their potential to overlie a deeply-buried mineralized breccia pipe. Soil geochemical results from the three mineralized breccia pipes (the only three of the 50 that had previously been drilled) show that: (1) Soils above the SBF pipe contain significant enrichment of Ag, Al, As, Ba, Ga, K, La, Mo, Nd, Ni, Pb, Sc, Th, U and Zn, and depletion in Ca, Mg and Sr, in contrast to soils outside the topographic and structural rim; (2) Soils over the inner treeless zone of the Canyon pipe show Mo and Pb enrichment anf As and Ga depletion, in contrast to soils from the surrounding forest; and (3) The soil survey of the Mohawk Canyon pipe was a failure because of the rocky terrane and lack of a B soil horizon, or because the pipe plunges. At least 11 of the 47 other collapse structures studied contain anomalous soil enrichments similar to the SBF uranium ore-bearing pipe, and thus have good potential as exploration targets for uranium. One of these 11, #1102, does contain surface mineralized rock. These surveys suggest that soil geochemical sampling is a useful tool for the recognition of many collapse structures with underlying ore-bearing breccia pipes. ?? 1994.

  18. Development of deep silicon plasma etching for 3D integration technology

    Directory of Open Access Journals (Sweden)

    Golishnikov А. А.

    2014-02-01

    Full Text Available Plasma etch process for thought-silicon via (TSV formation is one of the most important technological operations in the field of metal connections creation between stacked circuits in 3D assemble technology. TSV formation strongly depends on parameters such as Si-wafer thickness, aspect ratio, type of metallization material, etc. The authors investigate deep silicon plasma etch process for formation of TSV with controllable profile. The influence of process parameters on plasma etch rate, silicon etch selectivity to photoresist and the structure profile are researched in this paper. Technology with etch and passivation steps alternation was used as a method of deep silicon plasma etching. Experimental tool «Platrane-100» with high-density plasma reactor based on high-frequency ion source with transformer coupled plasma was used for deep silicon plasma etching. As actuation gases for deep silicon etching were chosen the following gases: SF6 was used for the etch stage and CHF3 was applied on the polymerization stage. As a result of research, the deep plasma etch process has been developed with the following parameters: silicon etch rate 6 µm/min, selectivity to photoresist 60 and structure profile 90±2°. This process provides formation of TSV 370 µm deep and about 120 µm in diameter.

  19. Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching

    International Nuclear Information System (INIS)

    Choi, J H; Bano, E; Latu-Romain, L; Dhalluin, F; Chevolleau, T; Baron, T

    2012-01-01

    In this paper, we demonstrate a top-down fabrication technique for nanometre scale silicon carbide (SiC) pillars using inductively coupled plasma etching. A set of experiments in SF 6 -based plasma was carried out in order to realize high aspect ratio SiC nanopillars. The etched SiC nanopillars using a small circular mask pattern (115 nm diameter) show high aspect ratio (7.4) with a height of 2.2 µm at an optimum bias voltage (300 V) and pressure (6 mTorr). Under the optimal etching conditions using a large circular mask pattern with 370 nm diameter, the obtained SiC nanopillars exhibit high anisotropy features (6.4) with a large etch depth (>7 µm). The etch characteristic of the SiC nanopillars under these conditions shows a high etch rate (550 nm min -1 ) and a high selectivity (over 60 for Ni). We also studied the etch profile of the SiC nanopillars and mask evolution over the etching time. As the mask pattern size shrinks in nanoscale, vertical and lateral mask erosion plays a crucial role in the etch profile of the SiC nanopillars. Long etching process makes the pillars appear with a hexagonal shape, coming from the crystallographic structure of α-SiC. It is found that the feature of pillars depends not only on the etching process parameters, but also on the crystallographic structure of the SiC phase. (paper)

  20. The mechanism of selective corrugation removal by KOH anisotropic wet etching

    International Nuclear Information System (INIS)

    Shikida, M; Inagaki, N; Sasaki, H; Amakawa, H; Fukuzawa, K; Sato, K

    2010-01-01

    The mechanism of selective corrugation removal by anisotropic wet etching—which reduces a periodic corrugation, called 'scalloping', formed on the sidewalls of microstructures by the Bosch process in deep reactive-ion etching (D-RIE)—was investigated. In particular, the corrugation-removal mechanism was analyzed by using the etching rate distribution pattern, and two equations for predicting the corrugation-removal time by the etching were derived. A Si{1 0 0} wafer was first etched by D-RIE at a depth of 29.4 µm (60 cycles) to form the corrugation on the sidewall surface. The height and pitch of the corrugation were 196 and 494 nm, respectively. Selective removal of the corrugation by using 50% KOH (40 °C) was experimentally tried. The corrugation formed on Si{1 0 0} sidewall surfaces was gradually reduced in size as the etching progressed, and it was completely removed after 5 min of etching. Similarly, the corrugation formed on a Si{1 1 0} sidewall surface was also selectively removed by KOH etching (etching time: 3 min). The roughness value of the sidewall surface was reduced from 17.6 nm to a few nanometers by the etching. These results confirm that the corrugation-removal mechanism using anisotropic wet etching can be explained in terms of the distribution pattern of etching rate