WorldWideScience

Sample records for deep ultraviolet photoluminescence

  1. Ultraviolet photoluminescence in Gd-doped silica and phosphosilicate fibers

    Directory of Open Access Journals (Sweden)

    Y. Wang

    2017-04-01

    Full Text Available Optical fiber lasers operating in the near infrared and visible spectral regions have relied on the spectroscopic properties of rare earth ions such as Yb3+, Er3+, Tm3+, Nd3+, and Sm3+. Here, we investigate Gd3+ doping in phosphosilicate and pure silica fibers using solution doping and sol-gel techniques, respectively, for potential applications in the ultraviolet. Photoluminescence spectra for optical fiber bundles and fiber preforms were recorded and compared. Emissions at 312 nm (phosphosilicate and 314 nm (pure silica were observed when pumping to the Gd3+ 6DJ, 6IJ, and 6PJ = 5/2, 3/2 energy levels. Oxygen deficient center was observed in solution doping sample with a wide absorption band centered at around 248 nm not affecting pumping to 6IJ states.

  2. The photoluminescence spectra of micropowder of aromatic compounds under ultraviolet laser excitation

    International Nuclear Information System (INIS)

    Rakhmatullaev, I.A.; Kurbonov, A.K. et al.; Gorelik, V.S.

    2016-01-01

    The method of diagnostics of aromatic compounds on the example of novocaine, aspirin and anthracene is presented. The method is based on optical detection of photoluminescence spectra at ultraviolet laser (266 nm) excitation. Employing this method the photoluminescence spectra are obtained which allows one to establish the differences of the composition and structure of compounds. The developed method can be used for analysis the quality of the large class of luminescent bioactive structures under the ultraviolet radiation. (authors)

  3. Photoluminescence emission spectra of Makrofol® DE 1-1 upon irradiation with ultraviolet radiation

    Directory of Open Access Journals (Sweden)

    M. El Ghazaly

    Full Text Available Photoluminescence (PL emission spectra of Makrofol® DE 1-1 (bisphenol-A based polycarbonate upon irradiation with ultraviolet radiation of different wavelengths were investigated. The absorption-and attenuation coefficient measurements revealed that the Makrofol® DE 1-1 is characterized by high absorbance in the energy range 6.53–4.43 eV but for a lower energy than 4.43 eV, it is approximately transparent. Makrofol® DE 1-1 samples were irradiated with ultraviolet radiation of wavelength in the range from 250 (4.28 eV to 400 (3.10 eV nm in step of 10 nm and the corresponding photoluminescence (PL emission spectra were measured with a spectrofluorometer. It is found that the integrated counts and the peak height of the photoluminescence emission (PL bands are strongly correlated with the ultraviolet radiation wavelength. They are increased at the ultraviolet radiation wavelength 280 nm and have maximum at 290 nm, thereafter they decrease and diminish at 360 nm of ultraviolet wavelength. The position of the PL emission band peak was red shifted starting from 300 nm, which increased with the increase the ultraviolet radiation wavelength. The PL bandwidth increases linearly with the increase of the ultraviolet radiation wavelength. When Makrofol® DE 1-1 is irradiated with ultraviolet radiation of short wavelength (UVC, the photoluminescence emission spectra peaks also occur in the UVC but of a relatively longer wavelength. The current new findings should be considered carefully when using Makrofol® DE 1-1 in medical applications related to ultraviolet radiation. Keywords: Photoluminescence spectra, Makrofol® DE 1-1, UV–vis spectrophotometry, Attenuation coefficient, Ultraviolet radiation

  4. Photoluminescence emission spectra of Makrofol® DE 1-1 upon irradiation with ultraviolet radiation

    Science.gov (United States)

    El Ghazaly, M.; Aydarous, Abdulkadir

    Photoluminescence (PL) emission spectra of Makrofol® DE 1-1 (bisphenol-A based polycarbonate) upon irradiation with ultraviolet radiation of different wavelengths were investigated. The absorption-and attenuation coefficient measurements revealed that the Makrofol® DE 1-1 is characterized by high absorbance in the energy range 6.53-4.43 eV but for a lower energy than 4.43 eV, it is approximately transparent. Makrofol® DE 1-1 samples were irradiated with ultraviolet radiation of wavelength in the range from 250 (4.28 eV) to 400 (3.10 eV) nm in step of 10 nm and the corresponding photoluminescence (PL) emission spectra were measured with a spectrofluorometer. It is found that the integrated counts and the peak height of the photoluminescence emission (PL) bands are strongly correlated with the ultraviolet radiation wavelength. They are increased at the ultraviolet radiation wavelength 280 nm and have maximum at 290 nm, thereafter they decrease and diminish at 360 nm of ultraviolet wavelength. The position of the PL emission band peak was red shifted starting from 300 nm, which increased with the increase the ultraviolet radiation wavelength. The PL bandwidth increases linearly with the increase of the ultraviolet radiation wavelength. When Makrofol® DE 1-1 is irradiated with ultraviolet radiation of short wavelength (UVC), the photoluminescence emission spectra peaks also occur in the UVC but of a relatively longer wavelength. The current new findings should be considered carefully when using Makrofol® DE 1-1 in medical applications related to ultraviolet radiation.

  5. Surface plasmon on topological insulator/dielectric interface enhanced ZnO ultraviolet photoluminescence

    Directory of Open Access Journals (Sweden)

    Zhi-Min Liao

    2012-06-01

    Full Text Available It has recently been predicted that the surface plasmons are allowed to exist on the interface between a topological insulator and vacuum. Surface plasmons can be employed to enhance the optical emission from various illuminants. Here, we study the photoluminescence properties of the ZnO/Bi2Te3 hybrid structures. Thin flakes of Bi2Te3, a typical three-dimensional topological insulator, were prepared on ZnO crystal surface by mechanical exfoliation method. The ultraviolet emission from ZnO was found to be enhanced by the Bi2Te3 thin flakes, which was attributed to the surface plasmon – photon coupling at the Bi2Te3/ZnO interface.

  6. An intense ultraviolet photoluminescence in sol-gel ZnO-SiO sub 2 nanocomposites

    CERN Document Server

    Fu Zheng Ping; Li Li; Dong Wei Wei; Jia Chong; Wu Wan

    2003-01-01

    We report the phenomenon that the intensity of the ultraviolet (UV) photoluminescence (PL) from ZnO was greatly enhanced by incorporating ZnO into the SiO sub 2 matrix. PL excitation results show that both the ZnO nanoparticles and the SiO sub 2 matrix in the nanocomposites contribute to the luminescence process for the UV band. On the basis of the x-ray photoelectron spectra, we suggest that interface energy states are formed due to the presence of Zn-O-Si bonds between ZnO nanoparticles and the SiO sub 2 matrix. A tentative model concerning the contribution of the ZnO nanoparticles, SiO sub 2 matrix, and ZnO-SiO sub 2 interface is suggested to explain the PL enhancement effect.

  7. Vacuum ultraviolet excited photoluminescence properties of Gd2O2CO3:Eu3+ phosphor

    Institute of Scientific and Technical Information of China (English)

    WANG Zhilong; WANG Yuhua; ZHANG Jiachi

    2008-01-01

    The Gd2O2CO3:Eu3+ with type-II structure phosphor was successfully synthesized via flux method at 400℃ and their photoluminescence properties in vacuum ultraviolet (VUV) region were examined. The broad and strong excitation bands in the range of 153-205 nm owing to the CO32- host absorption and charge transfer (CT) of Gd3+-O2- were observed for Gd2O2CO3:Eu3+. Under 172 nm excitation, Gd2O2CO3:Eu3+ exhibited strong red emission with good color purity, indicating Eu3+ ions located at low symmetry sites and the chromaticity coordination of luminescence for Gd2O2CO3:Eu3+ was (x=0.652, y=0.345). The photoluminescence quenching concentration of Eu3+ excited by 172 nm for Gd2O2CO3:Eu3+ was about 5%. Gd2O2CO3:Eu3+ would be a potential VUV-excited red phosphor applied in mercury-free fluorescent lamps.

  8. Deep Ultraviolet Macroporous Silicon Filters, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase I proposal describes a novel method to make deep and far UV optical filters from macroporous silicon. This type of filter consists of an array of...

  9. Dominant ultraviolet-blue photoluminescence of ZnO embedded into synthetic opal

    International Nuclear Information System (INIS)

    Abrarov, S.M.; Yuldashev, Sh.U.; Kim, T.W.; Lee, S.B.; Kwon, H.Y.; Kang, T.W.

    2005-01-01

    The temperature-dependent photoluminescence (PL) characteristics of zinc oxide (ZnO) embedded into the voids of synthetic opal were studied. ZnO was infiltrated into opal from aqueous solution with zinc nitrate precursor followed by thermal annealing. The PL spectra of the ZnO powder exhibit very high and broad emission peaks in the green region due to crystal defects, such as oxygen vacancies and zinc ion interstitials. In contrast to the PL spectra of ZnO powder, nanocrystals of ZnO embedded into the voids of FCC packed opal matrix exhibit dominant ultraviolet (UV)-blue and rapidly decreasing green PL emissions with decreasing temperature. The temperature-dependent PL characteristics show that the green band suppression in the ZnO nanocrystals is due to the influence of photonic crystal. The infiltration of nanoparticles into synthetic opal may be used for the fabrication of polycrystalline ZnO with dominant UV-blue PL. These results indicate that the luminescent materials embedded into photonic crystal may be promising for the fabrication of the RGB pixels in full-color displays

  10. Broadband stimulated Raman spectroscopy in the deep ultraviolet region

    Science.gov (United States)

    Kuramochi, Hikaru; Fujisawa, Tomotsumi; Takeuchi, Satoshi; Tahara, Tahei

    2017-09-01

    We report broadband stimulated Raman measurements in the deep ultraviolet (DUV) region, which enables selective probing of the aromatic amino acid residues inside proteins through the resonance enhancement. We combine the narrowband DUV Raman pump pulse (1000 cm-1) to realize stimulated Raman measurements covering a >1500 cm-1 spectral window. The stimulated Raman measurements for neat solvents, tryptophan, tyrosine, and glucose oxidase are performed using 240- and 290-nm Raman pump, highlighting the high potential of the DUV stimulated Raman probe for femtosecond time-resolved study of proteins.

  11. Deep ultraviolet semiconductor light sources for sensing and security

    Science.gov (United States)

    Shatalov, Max; Bilenko, Yuri; Yang, Jinwei; Gaska, Remis

    2009-09-01

    III-Nitride based deep ultraviolet (DUV) light emitting diodes (LEDs) rapidly penetrate into sensing market owing to several advantages over traditional UV sources (i.e. mercury, xenon and deuterium lamps). Small size, a wide choice of peak emission wavelengths, lower power consumption and reduced cost offer flexibility to system integrators. Short emission wavelength offer advantages for gas detection and optical sensing systems based on UV induced fluorescence. Large modulation bandwidth for these devices makes them attractive for frequency-domain spectroscopy. We will review present status of DUV LED technology and discuss recent advances in short wavelength emitters and high power LED lamps.

  12. Time-resolved ultraviolet near-field scanning optical microscope for characterizing photoluminescence lifetime of light-emitting devices.

    Science.gov (United States)

    Park, Kyoung-Duck; Jeong, Hyun; Kim, Yong Hwan; Yim, Sang-Youp; Lee, Hong Seok; Suh, Eun-Kyung; Jeong, Mun Seok

    2013-03-01

    We developed a instrument consisting of an ultraviolet (UV) near-field scanning optical microscope (NSOM) combined with time-correlated single photon counting, which allows efficient observation of temporal dynamics of near-field photoluminescence (PL) down to the sub-wavelength scale. The developed time-resolved UV NSOM system showed a spatial resolution of 110 nm and a temporal resolution of 130 ps in the optical signal. The proposed microscope system was successfully demonstrated by characterizing the near-field PL lifetime of InGaN/GaN multiple quantum wells.

  13. High-Power, Solid-State, Deep Ultraviolet Laser Generation

    Directory of Open Access Journals (Sweden)

    Hongwen Xuan

    2018-02-01

    Full Text Available At present, deep ultraviolet (DUV lasers at the wavelength of fourth harmonics of 1 μm (266 nm/258 nm and at the wavelength of 193 nm are widely utilized in science and industry. We review the generation of these DUV lasers by nonlinear frequency conversion processes using solid-state/fiber lasers as the fundamental frequency. A DUV laser at 258 nm by fourth harmonics generation (FHG could achieve an average power of 10 W with a beam quality of M2 < 1.5. Moreover, 1 W of average power at 193 nm was obtained by sum-frequency generation (SFG. A new concept of 193-nm DUV laser generation by use of the diamond Raman laser is also introduced. A proof-of-principle experiment of the diamond Raman laser is reported with the conversion efficiency of 23% from the pump to the second Stokes wavelength, which implies the potential to generate a higher power 193 nm DUV laser in the future.

  14. Microbiology and Biodegradation: Deep Ultraviolet Microscopy for the Detection, Quantification, and Characterization of Microbes

    Science.gov (United States)

    2015-11-16

    Approved for Public Release; Distribution Unlimited Final Report: 14.3 Microbiology and Biodegradation: Deep Ultraviolet Microscopy for the Detection...Fluroesence; Raman Spectroscopy; Microbiology REPORT DOCUMENTATION PAGE 11. SPONSOR/MONITOR’S REPORT NUMBER(S) 10. SPONSOR/MONITOR’S ACRONYM(S) ARO...14.3 Microbiology and Biodegradation: Deep Ultraviolet Microscopy for the Detection, Quantification, and Characterization of Microbes Report Title

  15. Self-compression of femtosecond deep-ultraviolet pulses by filamentation in krypton.

    Science.gov (United States)

    Adachi, Shunsuke; Suzuki, Toshinori

    2017-05-15

    We demonstrate self-compression of deep-ultraviolet (DUV) pulses by filamentation in krypton. In contrast to self-compression in the near-infrared, that in the DUV is associated with a red-shifted sub-pulse appearing in the pulse temporal profile. The achieved pulse width of 15 fs is the shortest among demonstrated sub-mJ deep-ultraviolet pulses.

  16. Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures

    Science.gov (United States)

    Liang, Yu-Han

    show, by temperature-dependent photoluminescence, that the activation energy of the acceptors is substantially lower, thus allowing a higher hole concentration than usual to be available for conduction. It is believed that the lower activation energy is a result of an impurity band tail induced by the high Mg concentration. The successful p-type doping of high aluminum-content (Al,Ga)N has allowed us to demonstrate operation of deep ultraviolet LEDs emitting at 274 nm. This achievement paves the way for making lasers that emit in the UV-C region of the spectrum. In this thesis, we performed preliminary work on using our structures to make UV-C lasers based on photonic crystal nanocavity structures. The nanocavity laser structures show that the threshold optical pumping power necessary to reach lasing is much lower than in conventional edge-emitting lasers. Furthermore, the photonic crystal nanocavity structure has a small mode volume and does not need mirrors for optical feedback. These advantages significantly reduce material loss and eliminate mirror loss. This structure therefore potentially opens the door to achieving efficient and compact lasers in the UV-C region of the spectrum.

  17. Fabrication of cerium-doped β-Ga2O3 epitaxial thin films and deep ultraviolet photodetectors.

    Science.gov (United States)

    Li, Wenhao; Zhao, Xiaolong; Zhi, Yusong; Zhang, Xuhui; Chen, Zhengwei; Chu, Xulong; Yang, Hujiang; Wu, Zhenping; Tang, Weihua

    2018-01-20

    High-quality cerium-doped β-Ga 2 O 3 (Ga 2 O 3 :Ce) thin films could be achieved on (0001)α-Al 2 O 3 substrates using a pulsed-laser deposition method. The impact of dopant contents concentration on crystal structure, optical absorption, photoluminescence, and photoelectric properties has been intensively studied. X-ray diffraction analysis results have shown that Ga 2 O 3 :Ce films are highly (2¯01) oriented, and the lattice spacing of the (4¯02) planes is sensitive to the Ce doping level. The prepared Ga 2 O 3 :Ce films show a sharp absorption edge at about 250 nm, meaning a high transparency to deep ultraviolet (DUV) light. The photoluminescence results revealed that the emissions were in the violet-blue-green region, which are associated with the donor-acceptor transitions with the Ce 3+ and oxygen vacancies related defects. A simple DUV photodetector device with a metal-semiconductor-metal structure has also been fabricated based on Ga 2 O 3 :Ce thin film. A distinct DUV photoresponse was obtained, suggesting a potential application in DUV photodetector devices.

  18. Highly efficient deep ultraviolet generation by sum-frequency mixing ...

    Indian Academy of Sciences (India)

    Ultraviolet laser radiation; walk-off compensation; third harmonic generation; nonlinear optical material. ... Because of its large birefringence, BBO crystal permits the generation of UV radiation near 200 nm by THG ... A, B and C are three different configurations for THG, A – Single crystal, B – two crystals (B2 and B3 in.

  19. The effect of ultraviolet irradiation on the photothermal, photoluminescence and photoluminescence excitation spectra of Mn-doped ZnS nanoparticles

    International Nuclear Information System (INIS)

    Briones Cruz, Almira; Shen Qing; Toyoda, Taro

    2006-01-01

    Research involving Mn doped nanocrystalline ZnS (ZnS:Mn) has grown in recent years, partly due to the high quantum luminescence efficiencies that have been reported. We measured the photoacoustic (PA), the photoluminescence (PL) and the photoluminescence excitation (PLE) spectra of surface-passivated and unpassivated ZnS:Mn. The effects of UV irradiation on the PL and PLE spectra were also studied. A decrease in the PA intensity after UV exposure was observed for the ZnS:Mn, indicating a decrease in the nonradiative relaxation probability. The observed increase in PL intensity indicates a corresponding increase in the radiative transition probability. For the PLE spectra, possible aggregation of the primary particles could have resulted in the lower measured energy of the PLE peak compared to the value predicted by the effective mass approximation theory

  20. Highly efficient deep ultraviolet generation by sum-frequency mixing ...

    Indian Academy of Sciences (India)

    Generation of deep ultraviolet radiation at 210 nm by Type-I third harmonic generation is achieved in a pair of BBO crystals with conversion efficiency as high as 36%. The fundamental source is the dye laser radiation pumped by the second harmonic of a Q-switched Nd : YAG laser. A walk-off compensated configuration ...

  1. Green and fast synthesis of amino-functionalized graphene quantum dots with deep blue photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Blanco, E., E-mail: eduardo.blanco@uca.es; Blanco, G.; Gonzalez-Leal, J. M.; Barrera, M. C.; Domínguez, M.; Ramirez-del-Solar, M. [University of Cádiz, Institute of Electron Microscopy and Materials (Spain)

    2015-05-15

    Graphene quantum dots (GQDs) were prepared using a top-down approach with a green microwave-assisted hydrothermal synthesis from ultrathin graphite, previously ultrasound delaminated. Results obtained by transmission electron microscopy and atomic force microscopy indicate that the so-fabricated GQDs are plates with 6 nm of average diameter, mostly single- or bi-layered. Photoluminescence characterization shows that the strongest emission occurs at 410–415 nm wavelength when the samples are excited at 310–320 nm wavelength. In addition to these down-conversion features, GQDs also exhibit up-conversion photoluminescence when excited in the range 560–800 nm wavelength, with broad emission peaks at 410–450 nm wavelength. Analysis of X-ray photoelectron spectroscopy measurements indicates a higher proportion of C–C sp{sup 2} than sp{sup 3} bonds, with the sp{sup 3} ones mainly located at the GQD surfaces. Also evidences of C–O and C–N bonds at the GQD surface have been observed. The combination of these results with Raman and ultraviolet–visible absorption experiments allows envisaging the GQDs to be composed of amino-functionalized sp{sup 2} islands with a high degree of surface oxidation. This would explain the photoluminescent properties observed in the samples under study. The combined up- and down-conversion photoluminescence processes would made these GQDs a powerful energy-transfer component in GQDs–TiO{sub 2} nanocomposite systems, which could be used in photocatalyst devices with superior performance compared to simple TiO{sub 2} systems.

  2. Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

    Science.gov (United States)

    Atiwongsangthong, Narin

    2012-08-01

    The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

  3. A picosecond widely tunable deep-ultraviolet laser for angle-resolved photoemission spectroscopy

    International Nuclear Information System (INIS)

    Zhang Feng-Feng; Yang Feng; Zhang Shen-Jin; Xu Zhi; Wang Zhi-Min; Xu Feng-Liang; Peng Qin-Jun; Zhang Jing-Yuan; Xu Zu-Yan; Wang Xiao-Yang; Chen Chuang-Tian

    2013-01-01

    We develop a picosecond widely tunable laser in a deep-ultraviolet region from 175 nm to 210 nm, generated by two stages of frequency doubling of a 80-MHz mode-locked picosecond Ti:sapphire laser. A β-BaB 2 O 4 walk-off compensation configuration and a KBe 2 BO 3 F 2 prism-coupled device are adopted for the generation of second harmonic and fourth harmonics, respectively. The highest power is 3.72 mW at 193 nm, and the fluctuation at 2.85 mW in 130 min is less than ±2%

  4. Photoluminescent properties of Sr2CeO4: Eu3+ and Sr2CeO4: Eu2+ phosphors suitable for near ultraviolet excitation

    International Nuclear Information System (INIS)

    Suresh, K.; Poornachandra Rao, N.V.; Murthy, K.V.R.

    2014-01-01

    Powder phosphors of 1 mol% Eu 3+ - and Eu 2+ -doped strontium cerium oxide (Sr 2 CeO 4 ) were synthesized by standard solid-state reaction method. Eu 3+ - and Eu 2+ -doped Sr 2 CeO 4 phosphors fired at 1100 ℃ for 2 h were analysed by X-ray diffraction (XRD) and photoluminescence (PL) techniques. The XRD patterns confirm that the obtained phosphors are a single phase of Sr 2 CeO 4 composed of orthorhombic structure. Room temperature PL excitation spectrum of air-heated Sr 2 CeO 4 : Eu phosphor has exhibited bands at 260, 280 and 350 nm. Whereas the excitation spectrum of Sr 2 CeO 4 : Eu phosphor heated under reducing (carbon) atmosphere exhibited single broadband range from 260 to 390 nm. The (PL) emission peaks of both the phosphors at 467 (blue), 537 (green) and 616 nm (red) generate white light under 260, 280 and 350 nm excitation wavelengths. The Commission International de l'Eclairage (CIE) colour coordinates conforms that these phosphors emitting white light. The results reveal that these phosphors are multifunctional phosphors which emit white light under these excitations that they could be used as white components for display and lamp devices and as well as possible good light-conversion phosphor LEDs under near-ultraviolet (nUV) chip. (author)

  5. Denaturing of single electrospun fibrinogen fibers studied by deep ultraviolet fluorescence microscopy.

    Science.gov (United States)

    Kim, Jeongyong; Song, Hugeun; Park, Inho; Carlisle, Christine R; Bonin, Keith; Guthold, Martin

    2011-03-01

    Deep ultraviolet (DUV) microscopy is a fluorescence microscopy technique to image unlabeled proteins via the native fluorescence of some of their amino acids. We constructed a DUV fluorescence microscope, capable of 280 nm wavelength excitation by modifying an inverted optical microscope. Moreover, we integrated a nanomanipulator-controlled micropipette into this instrument for precise delivery of picoliter amounts of fluid to selected regions of the sample. In proof-of-principle experiments, we used this instrument to study, in situ, the effect of a denaturing agent on the autofluorescence intensity of single, unlabeled, electrospun fibrinogen nanofibers. Autofluorescence emission from the nanofibers was excited at 280 nm and detected at ∼350 nm. A denaturant solution was discretely applied to small, select sections of the nanofibers and a clear local reduction in autofluorescence intensity was observed. This reduction is attributed to the dissolution of the fibers and the unfolding of proteins in the fibers. Copyright © 2010 Wiley-Liss, Inc.

  6. III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors

    KAUST Repository

    Detchprohm, T.

    2016-11-05

    The III-N wide-bandgap alloys in the AlInGaN system have many important and unique electrical and optical properties which have been exploited to develop deep-ultraviolet (DUV) optical devices operating at wavelengths < 300 nm, including light-emitting diodes, optically pumped lasers, and photodetectors. In this chapter, we review some aspects of the development and current state of the art of these DUV materials and devices. We describe the growth of III-N materials in the UV region by metalorganic chemical vapor deposition as well as the properties of epitaxial layers and heterostructure devices. In addition, we discuss the simulation and design of DUV laser diodes, the processing of III-N optical devices, and the description of the current state of the art of DUV lasers and photodetectors.

  7. Al x Ga1‑ x N-based semipolar deep ultraviolet light-emitting diodes

    Science.gov (United States)

    Akaike, Ryota; Ichikawa, Shuhei; Funato, Mitsuru; Kawakami, Yoichi

    2018-06-01

    Deep ultraviolet (UV) emission from Al x Ga1‑ x N-based light-emitting diodes (LEDs) fabricated on semipolar (1\\bar{1}02) (r-plane) AlN substrates is presented. The growth conditions are optimized. A high NH3 flow rate during metalorganic vapor phase epitaxy yields atomically flat Al y Ga1‑ y N (y > x) on which Al x Ga1‑ x N/Al y Ga1‑ y N multiple quantum wells with abrupt interfaces and good periodicity are fabricated. The fabricated r-Al x Ga1‑ x N-based LED emits at 270 nm, which is in the germicidal wavelength range. Additionally, the emission line width is narrow, and the peak wavelength is stable against the injection current, so the semipolar LED shows promise as a UV emitter.

  8. On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

    Science.gov (United States)

    Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

    2017-10-24

    The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

  9. AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics.

    Science.gov (United States)

    Sun, Wei; Tan, Chee-Keong; Tansu, Nelson

    2017-09-19

    The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by stacking ultra-thin ( ≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we performed a comprehensive study on the electronics and optoelectronics properties of the AlN/GaN DA for mid- and deep-ultraviolet (UV) applications. Our numerical analysis indicates significant miniband engineering in the AlN/GaN DA by tuning the thicknesses of AlN barriers and GaN wells, so that the effective energy gap can be engineered from ~3.97 eV to ~5.24 eV. The band structure calculation also shows that the valence subbands of the AlN/GaN DA is properly rearranged leading to the heavy-hole (HH) miniband being the top valence subband, which results in the desired transverse-electric polarized emission. Furthermore, our study reveals that the electron-hole wavefunction overlaps in the AlN/GaN DA structure can be remarkably enhanced up to 97% showing the great potential of improving the internal quantum efficiency for mid- and deep-UV device application. In addition, the optical absorption properties of the AlN/GaN DA are analyzed with wide spectral coverage and spectral tunability in mid- and deep-UV regime. Our findings suggest the potential of implementing the AlN/GaN DA as a promising active region design for high efficiency mid- and deep-UV device applications.

  10. Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations

    KAUST Repository

    Lin, Ronghui; Galan, Sergio Valdes; Sun, Haiding; Hu, Yangrui; Alias, Mohd Sharizal; Janjua, Bilal; Ng, Tien Khee; Ooi, Boon S.; Li, Xiaohang

    2018-01-01

    A nanowire (NW) structure provides an alternative scheme for deep ultraviolet light emitting diodes (DUV-LEDs) that promises high material quality and better light extraction efficiency (LEE). In this report, we investigate the influence of the tapering angle of closely packed AlGaN NWs, which is found to exist naturally in molecular beam epitaxy (MBE) grown NW structures, on the LEE of NW DUV-LEDs. It is observed that, by having a small tapering angle, the vertical extraction is greatly enhanced for both transverse magnetic (TM) and transverse electric (TE) polarizations. Most notably, the vertical extraction of TM emission increased from 4.8% to 24.3%, which makes the LEE reasonably large to achieve high-performance DUV-LEDs. This is because the breaking of symmetry in the vertical direction changes the propagation of the light significantly to allow more coupling into radiation modes. Finally, we introduce errors to the NW positions to show the advantages of the tapered NW structures can be projected to random closely packed NW arrays. The results obtained in this paper can provide guidelines for designing efficient NW DUV-LEDs.

  11. Tapering-induced enhancement of light extraction efficiency of nanowire deep ultraviolet LED by theoretical simulations

    KAUST Repository

    Lin, Ronghui

    2018-04-21

    A nanowire (NW) structure provides an alternative scheme for deep ultraviolet light emitting diodes (DUV-LEDs) that promises high material quality and better light extraction efficiency (LEE). In this report, we investigate the influence of the tapering angle of closely packed AlGaN NWs, which is found to exist naturally in molecular beam epitaxy (MBE) grown NW structures, on the LEE of NW DUV-LEDs. It is observed that, by having a small tapering angle, the vertical extraction is greatly enhanced for both transverse magnetic (TM) and transverse electric (TE) polarizations. Most notably, the vertical extraction of TM emission increased from 4.8% to 24.3%, which makes the LEE reasonably large to achieve high-performance DUV-LEDs. This is because the breaking of symmetry in the vertical direction changes the propagation of the light significantly to allow more coupling into radiation modes. Finally, we introduce errors to the NW positions to show the advantages of the tapered NW structures can be projected to random closely packed NW arrays. The results obtained in this paper can provide guidelines for designing efficient NW DUV-LEDs.

  12. All-solid-state deep ultraviolet laser for single-photon ionization mass spectrometry.

    Science.gov (United States)

    Yuan, Chengqian; Liu, Xianhu; Zeng, Chenghui; Zhang, Hanyu; Jia, Meiye; Wu, Yishi; Luo, Zhixun; Fu, Hongbing; Yao, Jiannian

    2016-02-01

    We report here the development of a reflectron time-of-flight mass spectrometer utilizing single-photon ionization based on an all-solid-state deep ultraviolet (DUV) laser system. The DUV laser was achieved from the second harmonic generation using a novel nonlinear optical crystal KBe2BO3F2 under the condition of high-purity N2 purging. The unique property of this laser system (177.3-nm wavelength, 15.5-ps pulse duration, and small pulse energy at ∼15 μJ) bears a transient low power density but a high single-photon energy up to 7 eV, allowing for ionization of chemicals, especially organic compounds free of fragmentation. Taking this advantage, we have designed both pulsed nanospray and thermal evaporation sources to form supersonic expansion molecular beams for DUV single-photon ionization mass spectrometry (DUV-SPI-MS). Several aromatic amine compounds have been tested revealing the fragmentation-free performance of the DUV-SPI-MS instrument, enabling applications to identify chemicals from an unknown mixture.

  13. UVUDF: Ultraviolet Imaging of the Hubble Ultra Deep Field with Wide-Field Camera 3

    Science.gov (United States)

    Teplitz, Harry I.; Rafelski, Marc; Kurczynski, Peter; Bond, Nicholas A.; Grogin, Norman; Koekemoer, Anton M.; Atek, Hakim; Brown, Thomas M.; Coe, Dan; Colbert, James W.; Ferguson, Henry C.; Finkelstein, Steven L.; Gardner, Jonathan P.; Gawiser, Eric; Giavalisco, Mauro; Gronwall, Caryl; Hanish, Daniel J.; Lee, Kyoung-Soo; de Mello, Duilia F.; Ravindranath, Swara; Ryan, Russell E.; Siana, Brian D.; Scarlata, Claudia; Soto, Emmaris; Voyer, Elysse N.; Wolfe, Arthur M.

    2013-12-01

    We present an overview of a 90 orbit Hubble Space Telescope treasury program to obtain near-ultraviolet imaging of the Hubble Ultra Deep Field using the Wide Field Camera 3 UVIS detector with the F225W, F275W, and F336W filters. This survey is designed to: (1) investigate the episode of peak star formation activity in galaxies at 1 dropouts at redshifts 1.7, 2.1, and 2.7 is largely consistent with the number predicted by published luminosity functions. We also confirm that the image mosaics have sufficient sensitivity and resolution to support the analysis of the evolution of star-forming clumps, reaching 28-29th magnitude depth at 5σ in a 0.''2 radius aperture depending on filter and observing epoch. Based on observations made with the NASA/ESA Hubble Space Telescope, obtained at the Space Telescope Science Institute, which is operated by the Association of Universities for Research in Astronomy, Inc., under NASA contract NAS 5-26555. These observations are #12534.

  14. On the origin of the ultraviolet photoluminescence in the Ce.sup.3+./sup.-doped epitaxial films of multicomponent (Lu,Gd).sub.3./sub.(Ga,Al).sub.5./sub.O.sub.12./sub. garnets

    Czech Academy of Sciences Publication Activity Database

    Babin, Vladimir; Chernenko, K.; Hanus, M.; Krasnikov, A.; Kučera, M.; Nikl, Martin; Zazubovich, S.

    2017-01-01

    Roč. 254, č. 4 (2017), 1-6, č. článku 1600570. ISSN 0370-1972 R&D Projects: GA ČR GA16-15569S Institutional support: RVO:68378271 Keywords : antisite Ce 3+ centers * fast ultraviolet photoluminescence * (Lu,Gd) sub >3 sub >(Ga,Al) sub >5 sub >O sub >12 sub > garnets Sub ject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.674, year: 2016

  15. Laser micromachined wax-covered plastic paper as both sputter deposition shadow masks and deep-ultraviolet patterning masks for polymethylmethacrylate-based microfluidic systems

    KAUST Repository

    Fan, Yiqiang; Li, Huawei; Yi, Ying; Foulds, Ian G.

    2013-01-01

    We report a technically innovative method of fabricating masks for both deep-ultraviolet (UV) patterning and metal sputtering on polymethylmethacrylate (PMMA) for microfluidic systems. We used a CO2 laser system to cut the required patterns on wax

  16. UVUDF: Ultraviolet imaging of the Hubble ultra deep field with wide-field camera 3

    Energy Technology Data Exchange (ETDEWEB)

    Teplitz, Harry I.; Rafelski, Marc; Colbert, James W.; Hanish, Daniel J. [Infrared Processing and Analysis Center, MS 100-22, Caltech, Pasadena, CA 91125 (United States); Kurczynski, Peter; Gawiser, Eric [Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854 (United States); Bond, Nicholas A.; Gardner, Jonathan P.; De Mello, Duilia F. [Laboratory for Observational Cosmology, Astrophysics Science Division, Code 665, Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Grogin, Norman; Koekemoer, Anton M.; Brown, Thomas M.; Coe, Dan; Ferguson, Henry C. [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Atek, Hakim [Laboratoire d' Astrophysique, École Polytechnique Fédérale de Lausanne (EPFL), Observatoire, CH-1290 Sauverny (Switzerland); Finkelstein, Steven L. [Department of Astronomy, The University of Texas at Austin, Austin, TX 78712 (United States); Giavalisco, Mauro [Astronomy Department, University of Massachusetts, Amherst, MA 01003 (United States); Gronwall, Caryl [Department of Astronomy and Astrophysics, The Pennsylvania State University, University Park, PA 16802 (United States); Lee, Kyoung-Soo [Department of Physics, Purdue University, 525 Northwestern Avenue, West Lafayette, IN 47907 (United States); Ravindranath, Swara, E-mail: hit@ipac.caltech.edu [Inter-University Centre for Astronomy and Astrophysics, Pune (India); and others

    2013-12-01

    We present an overview of a 90 orbit Hubble Space Telescope treasury program to obtain near-ultraviolet imaging of the Hubble Ultra Deep Field using the Wide Field Camera 3 UVIS detector with the F225W, F275W, and F336W filters. This survey is designed to: (1) investigate the episode of peak star formation activity in galaxies at 1 < z < 2.5; (2) probe the evolution of massive galaxies by resolving sub-galactic units (clumps); (3) examine the escape fraction of ionizing radiation from galaxies at z ∼ 2-3; (4) greatly improve the reliability of photometric redshift estimates; and (5) measure the star formation rate efficiency of neutral atomic-dominated hydrogen gas at z ∼ 1-3. In this overview paper, we describe the survey details and data reduction challenges, including both the necessity of specialized calibrations and the effects of charge transfer inefficiency. We provide a stark demonstration of the effects of charge transfer inefficiency on resultant data products, which when uncorrected, result in uncertain photometry, elongation of morphology in the readout direction, and loss of faint sources far from the readout. We agree with the STScI recommendation that future UVIS observations that require very sensitive measurements use the instrument's capability to add background light through a 'post-flash'. Preliminary results on number counts of UV-selected galaxies and morphology of galaxies at z ∼ 1 are presented. We find that the number density of UV dropouts at redshifts 1.7, 2.1, and 2.7 is largely consistent with the number predicted by published luminosity functions. We also confirm that the image mosaics have sufficient sensitivity and resolution to support the analysis of the evolution of star-forming clumps, reaching 28-29th magnitude depth at 5σ in a 0.''2 radius aperture depending on filter and observing epoch.

  17. DEEP ULTRAVIOLET LUMINOSITY FUNCTIONS AT THE INFALL REGION OF THE COMA CLUSTER

    International Nuclear Information System (INIS)

    Hammer, D. M.; Hornschemeier, A. E.; Jenkins, L.; Salim, S.; Smith, R.; Mobasher, B.; Miller, N.; Ferguson, H.

    2012-01-01

    We have used deep GALEX observations at the infall region of the Coma cluster to measure the faintest ultraviolet (UV) luminosity functions (LFs) presented for a rich galaxy cluster thus far. The Coma UV LFs are measured to M UV = –10.5 in the GALEX FUV and NUV bands, or 3.5 mag fainter than previous studies, and reach the dwarf early-type galaxy population in Coma for the first time. The Schechter faint-end slopes (α ≈ –1.39 in both GALEX bands) are shallower than reported in previous Coma UV LF studies owing to a flatter LF at faint magnitudes. A Gaussian-plus-Schechter model provides a slightly better parameterization of the UV LFs resulting in a faint-end slope of α ≈ –1.15 in both GALEX bands. The two-component model gives faint-end slopes shallower than α = –1 (a turnover) for the LFs constructed separately for passive and star-forming galaxies. The UV LFs for star-forming galaxies show a turnover at M UV ≈ –14 owing to a deficit of dwarf star-forming galaxies in Coma with stellar masses below M * = 10 8 M ☉ . A similar turnover is identified in recent UV LFs measured for the Virgo cluster suggesting this may be a common feature of local galaxy clusters, whereas the field UV LFs continue to rise at faint magnitudes. We did not identify an excess of passive galaxies as would be expected if the missing dwarf star-forming galaxies were quenched inside the cluster. In fact, the LFs for both dwarf passive and star-forming galaxies show the same turnover at faint magnitudes. We discuss the possible origin of the missing dwarf star-forming galaxies in Coma and their expected properties based on comparisons to local field galaxies.

  18. Sub-mm Scale Fiber Guided Deep/Vacuum Ultra-Violet Optical Source for Trapped Mercury Ion Clocks

    Science.gov (United States)

    Yi, Lin; Burt, Eric A.; Huang, Shouhua; Tjoelker, Robert L.

    2013-01-01

    We demonstrate the functionality of a mercury capillary lamp with a diameter in the sub-mm range and deep ultraviolet (DUV)/ vacuum ultraviolet (VUV) radiation delivery via an optical fiber integrated with the capillary. DUV spectrum control is observed by varying the fabrication parameters such as buffer gas type and pressure, capillary diameter, electrical resonator design, and temperature. We also show spectroscopic data of the 199Hg+ hyper-fine transition at 40.5GHz when applying the above fiber optical design. We present efforts toward micro-plasma generation in hollow-core photonic crystal fiber with related optical design and theoretical estimations. This new approach towards a more practical DUV optical interface could benefit trapped ion clock developments for future ultra-stable frequency reference and time-keeping applications.

  19. Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

    Science.gov (United States)

    Liang, Y. H.; Towe, E.

    2018-03-01

    Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

  20. Co-precipitation synthesis and photoluminescence properties of K2GdZr (PO4)3:Eu3+—a deep red luminomagnetic nanophosphor

    International Nuclear Information System (INIS)

    Chawla, Santa; Ravishanker,; Rajkumar,; Khan, A.F.; Kotnala, R.K.

    2013-01-01

    Nanoparticles of Eu 3+ activated K 2 GdZr(PO 4 ) 3 has been successfully synthesized by controlled inclusive co-precipitation method in high alkaline environment to enable complex crystalline phase formation. Much enhanced deep red luminescence, broadened emission bands with unusually prominent 5 D 0 – 7 F 4 transition at 699 nm are defining characteristics of the nanoparticles compared to bulk counterpart synthesized by solid state reaction route. Among various excitation pathways such as charge transfer from O 2− –Eu 3+ , Gd 3+ –Eu 3+ , the direct excitation of Eu 3+ at 394 nm is the most effective as revealed by photoluminescence and time resolved studies. Occurrence and variation of superparamagnetism in undoped and Eu 3+ doped nanoparticles indicate the role of unpaired 4f electron spin of Gd 3+ in making the nanoparticles superparamagnetic. A room temperature cost effective synthesis process of Eu 3+ doped multimetallic complex phosphate supermagnetic nanophosphor can pave way for applications requiring such functionality. -- Highlights: ► Eu 3+ doped K 2 GdZr(PO 4 ) 3 nanocrystals have been synthesized successfully by coprecipitation. ► K 2 GdZr(PO 4 ) 3 :Eu 3+ emit intense deep red fluorescence. ► Red emitting K 2 GdZr(PO 4 ) 3 :Eu 3+ nanocrystals show superparamagnetism due to Gd 3+ . ► Luminomagnetic KGP:Eu 3+ have application potential in biology, lighting and display

  1. AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template

    International Nuclear Information System (INIS)

    Li-Wen, Sang; Zhi-Xin, Qin; Hao, Fang; Yan-Zhao, Zhang; Tao, Li; Zheng-Yu, Xu; Zhi-Jian, Yang; Bo, Shen; Guo-Yi, Zhang; Shu-Ping, Li; Wei-Huang, Yang; Hang-Yang, Chen; Da-Yi, Liu; Jun-Yong, Kang

    2009-01-01

    We report on the growth and fabrication of deep ultraviolet (DUV) light emitting diodes (LEDs) on an AlN template which was grown on a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in the AlN layer are greatly decreased with the introduction of this buffer layer. The crystalline quality of the AlGaN epilayer is further improved by using a low-temperature GaN interlayer between AlGaN and AlN. Electroluminescences of different DUV-LED devices at a wavelength of between 262 and 317 nm are demonstrated. To improve the hole concentration of p-type AlGaN, Mg-doping with trimethylindium assistance approach is performed. It is found that the serial resistance of DUV-LED decreases and the performance of DUV-LED such as EL properties is improved. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. A Polarization-Adjustable Picosecond Deep-Ultraviolet Laser for Spin- and Angle-Resolved Photoemission Spectroscopy

    International Nuclear Information System (INIS)

    Zhang Feng-Feng; Yang Feng; Zhang Shen-Jin; Wang Zhi-Min; Xu Feng-Liang; Peng Qin-Jun; Zhang Jing-Yuan; Xu Zu-Yan; Wang Xiao-Yang; Chen Chuang-Tian

    2012-01-01

    We report on a polarization-adjustable picosecond deep-ultraviolet (DUV) laser at 177.3 nm. The DUV laser was produced by second harmonic generation from a mode-locked laser at 355 nm in nonlinear optical crystal KBBF. The laser delivered a maximum average output power of 1.1 mW at 177.3 nm. The polarization of the 177.3 nm beam was adjusted with linear and circular polarization by means of λ/4 and λ/2 wave plates. To the best of our knowledge, the laser has been employed as the circularly polarized and linearly polarized DUV light source for a spin- and angle-resolved photoemission spectroscopy with high resolution for the first time. (fundamental areas of phenomenology(including applications))

  3. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

    International Nuclear Information System (INIS)

    Mi, Z; Zhao, S; Djavid, M; Liu, X; Kang, J; Woo, S Y; Bugnet, M; Botton, G A; Kong, X; Guo, H; Ji, W; Liu, Z

    2016-01-01

    We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p -type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ∼5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented. (paper)

  4. Performance Assessment of a Plate Beam Splitter for Deep-Ultraviolet Raman Measurements with a Spatial Heterodyne Raman Spectrometer.

    Science.gov (United States)

    Lamsal, Nirmal; Angel, S Michael

    2017-06-01

    In earlier works, we demonstrated a high-resolution spatial heterodyne Raman spectrometer (SHRS) for deep-ultraviolet (UV) Raman measurements, and showed its ability to measure UV light-sensitive compounds using a large laser spot size. We recently modified the SHRS by replacing the cube beam splitter (BS) with a custom plate beam splitter with higher light transmission, an optimized reflectance/transmission ratio, higher surface flatness, and better refractive index homogeneity than the cube beam splitter. Ultraviolet Raman measurements were performed using a SHRS modified to use the plate beam splitter and a matching compensator plate and compared to the previously described cube beam splitter setup. Raman spectra obtained using the modified SHRS exhibit much higher signals and signal-to-noise (S/N) ratio and show fewer spectral artifacts. In this paper, we discuss the plate beam splitter SHRS design features, the advantages over previous designs, and discuss some general SHRS issues such as spectral bandwidth, S/N ratio characteristics, and optical efficiency.

  5. Formation of Isolated Zn Vacancies in ZnO Single Crystals by Absorption of Ultraviolet Radiation: A Combined Study Using Positron Annihilation, Photoluminescence, and Mass Spectroscopy

    Science.gov (United States)

    Khan, Enamul H.; Weber, Marc H.; McCluskey, Matthew D.

    2013-07-01

    Positron annihilation spectra reveal isolated zinc vacancy (VZn) creation in single-crystal ZnO exposed to 193-nm radiation at 100mJ/cm2 fluence. The appearance of a photoluminescence excitation peak at 3.18 eV in irradiated ZnO is attributed to an electronic transition from the VZn acceptor level at ˜100meV to the conduction band. The observed VZn density profile and hyperthermal Zn+ ion emission support zinc vacancy-interstitial Frenkel pair creation by exciting a wide 6.34 eV Zn-O antibonding state at 193-nm photon—a novel photoelectronic process for controlled VZn creation in ZnO.

  6. 2-(2-Hydroxyphenyl)imidazole-based four-coordinate organoboron compounds with efficient deep blue photoluminescence and electroluminescence.

    Science.gov (United States)

    Zhang, Zhenyu; Zhang, Zuolun; Zhang, Hongyu; Wang, Yue

    2017-12-19

    Two new four-coordinate organoboron compounds with 2-(2-hydroxyphenyl)imidazole derivatives as the chelating ligands have been synthesized. They possess high thermal stability and are able to form an amorphous glass state. Crystallographic analyses indicate that the differences in ligand structure cause the change of ππ stacking character. The CH 2 Cl 2 solutions and thin films of these compounds display bright blue emission, and these compounds have appropriate HOMO and LUMO energy levels for carrier injection in OLEDs. By utilizing the good thermal and luminescent properties, as well as the proper frontier orbital energy levels, bright non-doped OLEDs with a simple structure have been realized. Notably, these simple devices show deep blue electroluminescence with the Commission Internationale de l'Éclairage (CIE) coordinate of ca. (0.16, 0.08), which is close to the CIE coordinate of (0.14, 0.08) for standard blue defined by the National Television System Committee. In addition, one of the devices exhibits good performance, showing brightness, current efficiency, power efficiency and external quantum efficiency up to 2692 cd m -2 , 2.50 cd A -1 , 1.81 lm W -1 and 3.63%, respectively. This study not only provides good deep-blue emitting OLED materials that are rarely achieved by using four-coordinate organoboron compounds, but also allows a deeper understanding of the structure-property relationship of 2-(2-hydroxyphenyl)imidazole-based boron complexes, which benefits the further structural design of this type of material.

  7. Synthesis and photoluminescence properties of LaAlO3:Mn4+, Na+ deep red-emitting phosphor

    Science.gov (United States)

    Cao, Renping; Ceng, Dong; Liu, Pan; Yu, Xiaoguang; Guo, Siling; Zheng, Guotai

    2016-04-01

    LaAlO3:Mn4+ and LaAlO3:Mn4+, Na+ deep red-emitting phosphors are synthesized by a solid-state reaction method in air. Their crystal structures, lifetimes, and luminescence properties are investigated, respectively. PLE spectrum monitored at 730 nm contains three PLE bands peaking at ~276, 325, and 500 nm within the range 200-550 nm, and PL spectrum with excitation 325 nm exhibits two PL band peaks located at ~703 and 730 nm owing to anti-stokes vibronic sidebands associated with the excited state 2E of Mn4+ ion and the 2E → 4A2 transition of Mn4+ ion, respectively. The optimal Mn4+ doping concentration is ~0.8 mol%. Lifetime of LaAl0.992O3:0.8 %Mn4+ phosphor is ~0.92 ms. Na+ ion as charge compensator can improve obviously the luminescence properties of LaAlO3:Mn4+ phosphor due to the charge compensation. The luminous mechanism of Mn4+ ion is explained by using Tanabe-Sugano diagram of Mn4+ ion in octahedral crystal field. The contents of this paper will be helpful to develop novel Mn4+-doped materials and improve their luminescence properties.

  8. Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In2O3 nanowires

    Science.gov (United States)

    Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra

    2018-04-01

    We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor-liquid-solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy ({V}{{O}}) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of {V}{{O}} defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

  9. Defect induced structural inhomogeneity, ultraviolet light emission and near-band-edge photoluminescence broadening in degenerate In 2 O 3 nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Mukherjee, Souvik; Sarkar, Ketaki; Wiederrecht, Gary P.; Schaller, Richard D.; Gosztola, David J.; Stroscio, Michael A.; Dutta, Mitra

    2018-03-01

    We demonstrate here defect induced changes on the morphology and surface properties of indium oxide (In2O3) nanowires and further study their effects on the near-band-edge (NBE) emission, thereby showing the significant influence of surface states on In2O3 nanostructure based device characteristics for potential optoelectronic applications. In2O3 nanowires with cubic crystal structure (c-In2O3) were synthesized via carbothermal reduction technique using a gold-catalyst-assisted vapor–liquid–solid method. Onset of strong optical absorption could be observed at energies greater than 3.5 eV consistent with highly n-type characteristics due to unintentional doping from oxygen vacancy (VO) defects as confirmed using Raman spectroscopy. A combination of high resolution transmission electron microscopy, x-ray photoelectron spectroscopy and valence band analysis on the nanowire morphology and stoichiometry reveals presence of high-density of VO defects on the surface of the nanowires. As a result, chemisorbed oxygen species can be observed leading to upward band bending at the surface which corresponds to a smaller valence band offset of 2.15 eV. Temperature dependent photoluminescence (PL) spectroscopy was used to study the nature of the defect states and the influence of the surface states on the electronic band structure and NBE emission has been discussed. Our data reveals significant broadening of the NBE PL peak consistent with impurity band broadening leading to band-tailing effect from heavy doping.

  10. Photoluminescence as a tool for characterizing point defects in semiconductors

    Science.gov (United States)

    Reshchikov, Michael

    2012-02-01

    Photoluminescence is one of the most powerful tools used to study optically-active point defects in semiconductors, especially in wide-bandgap materials. Gallium nitride (GaN) and zinc oxide (ZnO) have attracted considerable attention in the last two decades due to their prospects in optoelectronics applications, including blue and ultraviolet light-emitting devices. However, in spite of many years of extensive studies and a great number of publications on photoluminescence from GaN and ZnO, only a few defect-related luminescence bands are reliably identified. Among them are the Zn-related blue band in GaN, Cu-related green band and Li-related orange band in ZnO. Numerous suggestions for the identification of other luminescence bands, such as the yellow band in GaN, or green and yellow bands in ZnO, do not stand up under scrutiny. In these conditions, it is important to classify the defect-related luminescence bands and find their unique characteristics. In this presentation, we will review the origin of the major luminescence bands in GaN and ZnO. Through simulations of the temperature and excitation intensity dependences of photoluminescence and by employing phenomenological models we are able to obtain important characteristics of point defects such as carrier capture cross-sections for defects, concentrations of defects, and their charge states. These models are also used to find the absolute internal quantum efficiency of photoluminescence and obtain information about nonradiative defects. Results from photoluminescence measurements will be compared with results of the first-principle calculations, as well as with the experimental data obtained by other techniques such as positron annihilation spectroscopy, deep-level transient spectroscopy, and secondary ion mass spectrometry.

  11. Compact Solid-State 213 nm Laser Enables Standoff Deep Ultraviolet Raman Spectrometer: Measurements of Nitrate Photochemistry.

    Science.gov (United States)

    Bykov, Sergei V; Mao, Michael; Gares, Katie L; Asher, Sanford A

    2015-08-01

    We describe a new compact acousto-optically Q-switched diode-pumped solid-state (DPSS) intracavity frequency-tripled neodymium-doped yttrium vanadate laser capable of producing ~100 mW of 213 nm power quasi-continuous wave as 15 ns pulses at a 30 kHz repetition rate. We use this new laser in a prototype of a deep ultraviolet (UV) Raman standoff spectrometer. We use a novel high-throughput, high-resolution Echelle Raman spectrograph. We measure the deep UV resonance Raman (UVRR) spectra of solid and solution sodium nitrate (NaNO3) and ammonium nitrate (NH4NO3) at a standoff distance of ~2.2 m. For this 2.2 m standoff distance and a 1 min spectral accumulation time, where we only monitor the symmetric stretching band, we find a solid state NaNO3 detection limit of ~100 μg/cm(2). We easily detect ~20 μM nitrate water solutions in 1 cm path length cells. As expected, the aqueous solutions UVRR spectra of NaNO3 and NH4NO3 are similar, showing selective resonance enhancement of the nitrate (NO3(-)) vibrations. The aqueous solution photochemistry is also similar, showing facile conversion of NO3(-) to nitrite (NO2(-)). In contrast, the observed UVRR spectra of NaNO3 and NH4NO3 powders significantly differ, because their solid-state photochemistries differ. Whereas solid NaNO3 photoconverts with a very low quantum yield to NaNO2, the NH4NO3 degrades with an apparent quantum yield of ~0.2 to gaseous species.

  12. Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Reich, Christoph, E-mail: Christoph.Reich@tu-berlin.de; Guttmann, Martin; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, Berlin 10623 (Germany); Feneberg, Martin; Goldhahn, Rüdiger [Institut für Experimentelle Physik, Otto-von-Guericke-Universität, Universitätsplatz 2, Magdeburg 39106 (Germany); Rass, Jens; Kneissl, Michael [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, Berlin 10623 (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany); Lapeyrade, Mickael; Einfeldt, Sven; Knauer, Arne; Kueller, Viola; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany)

    2015-10-05

    The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented Al{sub x}Ga{sub 1−x}N multiple quantum wells (MQWs) has been studied by simulations and electroluminescence measurements. With increasing aluminum mole fraction in the quantum well x, the in-plane intensity of transverse-electric (TE) polarized light decreases relative to that of the transverse-magnetic polarized light, attributed to a reordering of the valence bands in Al{sub x}Ga{sub 1−x}N. Using k ⋅ p theoretical model calculations, the AlGaN MQW active region design has been optimized, yielding increased TE polarization and thus higher extraction efficiency for bottom-emitting LEDs in the deep UV spectral range. Using (i) narrow quantum wells, (ii) barriers with high aluminum mole fractions, and (iii) compressive growth on patterned aluminum nitride sapphire templates, strongly TE-polarized emission was observed at wavelengths as short as 239 nm.

  13. Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Martens, M.; Kuhn, C.; Ziffer, E.; Simoneit, T.; Rass, J.; Wernicke, T. [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kueller, V.; Knauer, A.; Einfeldt, S.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, M. [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2016-04-11

    Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulk layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al{sub 0.70}Ga{sub 0.30}N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm{sup 2}.

  14. Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

    KAUST Repository

    Shervin, Shahab; Oh, Seung Kyu; Park, Hyun Jung; Lee, Keon Hwa; Asadirad, Mojtaba; Kim, Seung Hwan; Kim, Jeomoh; Pouladi, Sara; Lee, Sung-Nam; Li, Xiaohang; Kwak, Joon-Seop; Ryou, Jae-Hyun

    2018-01-01

    Deep ultraviolet (DUV) light at the wavelength range of 250‒280 nm (UVC spectrum) is essential for numerous applications such as sterilization, purification, sensing, and communication. III-nitride-based DUV light-emitting diodes (DUV LEDs), like other solid-state lighting sources, offer a great potential to replace the conventional gas-discharged lamps with short lifetimes and toxic-element-bearing nature. However, unlike visible LEDs, the DUV LEDs are still suffering from low quantum efficiencies (QEs) and low optical output powers. In this work, reported is a new route to improve QEs of AlGaN-based DUV LEDs using mechanical flexibility of recently developed bendable thin-film structures. Numerical studies show that electronic band structures of AlGaN heterostructures and resulting optical and electrical characteristics of the devices can be significantly modified by external bending through active control of piezoelectric polarization. Internal quantum efficiency (IQE) is enhanced higher than three times, when the DUV LEDs are moderately bent to induce in-plane compressive strain in the heterostructure. Furthermore, efficiency droop at high injection currents is mitigated and turn-on voltage of diodes decreases with the same bending condition. The concept of bendable DUV LEDs with a controlled external strain can provide a new path for high-output-power and high-efficiency devices.

  15. Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

    KAUST Repository

    Shervin, Shahab

    2018-01-26

    Deep ultraviolet (DUV) light at the wavelength range of 250‒280 nm (UVC spectrum) is essential for numerous applications such as sterilization, purification, sensing, and communication. III-nitride-based DUV light-emitting diodes (DUV LEDs), like other solid-state lighting sources, offer a great potential to replace the conventional gas-discharged lamps with short lifetimes and toxic-element-bearing nature. However, unlike visible LEDs, the DUV LEDs are still suffering from low quantum efficiencies (QEs) and low optical output powers. In this work, reported is a new route to improve QEs of AlGaN-based DUV LEDs using mechanical flexibility of recently developed bendable thin-film structures. Numerical studies show that electronic band structures of AlGaN heterostructures and resulting optical and electrical characteristics of the devices can be significantly modified by external bending through active control of piezoelectric polarization. Internal quantum efficiency (IQE) is enhanced higher than three times, when the DUV LEDs are moderately bent to induce in-plane compressive strain in the heterostructure. Furthermore, efficiency droop at high injection currents is mitigated and turn-on voltage of diodes decreases with the same bending condition. The concept of bendable DUV LEDs with a controlled external strain can provide a new path for high-output-power and high-efficiency devices.

  16. Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography

    KAUST Repository

    Wyatt-Moon, Gwenhivir

    2017-11-28

    Adhesion lithography (a-Lith) is a versatile fabrication technique used to produce asymmetric coplanar electrodes separated by a <15 nm nanogap. Here, we use a-Lith to fabricate deep ultraviolet (DUV) photodetectors by combining coplanar asymmetric nanogap electrode architectures (Au/Al) with solution-processable wide-band-gap (3.5–3.9 eV) p-type semiconductor copper(I) thiocyanate (CuSCN). Because of the device’s unique architecture, the detectors exhibit high responsivity (≈79 A W–1) and photosensitivity (≈720) when illuminated with a DUV-range (λpeak = 280 nm) light-emitting diode at 220 μW cm–2. Interestingly, the photosensitivity of the photodetectors remains fairly high (≈7) even at illuminating intensities down to 0.2 μW cm–2. The scalability of the a-Lith process combined with the unique properties of CuSCN paves the way to new forms of inexpensive, yet high-performance, photodetectors that can be manufactured on arbitrary substrate materials including plastic.

  17. Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

    International Nuclear Information System (INIS)

    Martens, M.; Kuhn, C.; Ziffer, E.; Simoneit, T.; Rass, J.; Wernicke, T.; Kueller, V.; Knauer, A.; Einfeldt, S.; Weyers, M.; Kneissl, M.

    2016-01-01

    Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulk layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al_0_._7_0Ga_0_._3_0N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm"2.

  18. Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography

    KAUST Repository

    Wyatt-Moon, Gwenhivir; Georgiadou, Dimitra G; Semple, James; Anthopoulos, Thomas D.

    2017-01-01

    Adhesion lithography (a-Lith) is a versatile fabrication technique used to produce asymmetric coplanar electrodes separated by a <15 nm nanogap. Here, we use a-Lith to fabricate deep ultraviolet (DUV) photodetectors by combining coplanar asymmetric nanogap electrode architectures (Au/Al) with solution-processable wide-band-gap (3.5–3.9 eV) p-type semiconductor copper(I) thiocyanate (CuSCN). Because of the device’s unique architecture, the detectors exhibit high responsivity (≈79 A W–1) and photosensitivity (≈720) when illuminated with a DUV-range (λpeak = 280 nm) light-emitting diode at 220 μW cm–2. Interestingly, the photosensitivity of the photodetectors remains fairly high (≈7) even at illuminating intensities down to 0.2 μW cm–2. The scalability of the a-Lith process combined with the unique properties of CuSCN paves the way to new forms of inexpensive, yet high-performance, photodetectors that can be manufactured on arbitrary substrate materials including plastic.

  19. Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

    Science.gov (United States)

    Gao, Na; Lin, Wei; Chen, Xue; Huang, Kai; Li, Shuping; Li, Jinchai; Chen, Hangyang; Yang, Xu; Ji, Li; Yu, Edward T; Kang, Junyong

    2014-12-21

    Ultra-short-period (AlN)m/(GaN)n superlattices with tunable well and barrier atomic layer numbers were grown by metal-organic vapour phase epitaxy, and employed to demonstrate narrowband deep ultraviolet photodetection. High-resolution transmission electron microscopy and X-ray reciprocal space mapping confirm that superlattices containing well-defined, coherently strained GaN and AlN layers as thin as two atomic layers (∼ 0.5 nm) were grown. Theoretical and experimental results demonstrate that an optical absorption band as narrow as 9 nm (210 meV) at deep-ultraviolet wavelengths can be produced, and is attributable to interband transitions between quantum states along the [0001] direction in ultrathin GaN atomic layers isolated by AlN barriers. The absorption wavelength can be precisely engineered by adjusting the thickness of the GaN atomic layers because of the quantum confinement effect. These results represent a major advance towards the realization of wavelength selectable and narrowband photodetectors in the deep-ultraviolet region without any additional optical filters.

  20. Widely tunable broadband deep-ultraviolet to visible wavelength generation by the cross phase modulation in a hollow-core photonic crystal fiber cladding

    International Nuclear Information System (INIS)

    Yuan, J H; Sang, X Z; Wu, Q; Yu, C X; Shen, X W; Wang, K R; Yan, B B; Teng, Y L; Farrell, G; Zhou, G Y; Xia, C M; Han, Y; Li, S G; Hou, L T

    2013-01-01

    The deep-ultraviolet (UV) to visible wavelengths are efficiently generated for the first time by the cross phase modulation (XPM) between the red-shifted solitons and the blue-shifted dispersive waves (DWs) in the fundamental guided mode of the multi-knots of a hollow-core photonic crystal fiber cladding (HC-PCFC). When the femtosecond pulses with a wavelength of 850 nm and average power of 300 mW are coupled into the knots 1–3, the conversion efficiency η uv−v of 11% and bandwidth B uv−v of 100 nm in the deep-UV region are experimentally obtained. The multi-milliwatt ultrashort pulses are tunable over the deep-UV (below 200 nm) to visible spectral region by adjusting the wavelengths of the pump pulses in different knots. It is expected that these widely tunable broadband ultrashort deep-UV–visible pulse sources could have important applications in ultrafast photonics, femtochemisty, photobiology, and UV–visible resonant Raman scattering. (letter)

  1. Laser micromachined wax-covered plastic paper as both sputter deposition shadow masks and deep-ultraviolet patterning masks for polymethylmethacrylate-based microfluidic systems

    KAUST Repository

    Fan, Yiqiang

    2013-12-16

    We report a technically innovative method of fabricating masks for both deep-ultraviolet (UV) patterning and metal sputtering on polymethylmethacrylate (PMMA) for microfluidic systems. We used a CO2 laser system to cut the required patterns on wax-covered plastic paper; the laser-patterned wax paper will either work as a mask for deep-UV patterning or as a mask for metal sputtering. A microfluidic device was also fabricated to demonstrate the feasibility of this method. The device has two layers: the first layer is a 1-mm thick PMMA substrate that was patterned by deep-UV exposure to create microchannels. The mask used in this process was the laser-cut wax paper. The second layer, also a 1-mm thick PMMA layer, was gold sputtered with patterned wax paper as the shadow mask. These two pieces of PMMA were then bonded to form microchannels with exposed electrodes. This process is a simple and rapid method for creating integrated microfluidic systems that do not require cleanroom facilities.

  2. CsB{sub 4}O{sub 6}F. A congruent-melting deep-ultraviolet nonlinear optical material by combining superior functional units

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xuefei [Key Lab. of Functional Materials and Devices for Special Environments, Xinjiang Technical Inst. of Physics and Chemistry, Chinese Academy of Sciences, Xinjiang Key Lab. of Electronic Information Materials and Devices, Urumqi (China); University of Chinese Academy of Sciences, Beijing (China); Wang, Ying; Zhang, Bingbing; Zhang, Fangfang; Yang, Zhihua; Pan, Shilie [Key Lab. of Functional Materials and Devices for Special Environments, Xinjiang Technical Inst. of Physics and Chemistry, Chinese Academy of Sciences, Xinjiang Key Lab. of Electronic Information Materials and Devices, Urumqi (China)

    2017-11-06

    The discovery of new nonlinear optical (NLO) materials for coherent light generation in the deep-ultraviolet (DUV, wavelength below 200 nm) region is essential for the development of laser technologies. Herein, we report a new material CsB{sub 4}O{sub 6}F (CBF), which combines the superior structural properties of two well-known NLO materials, β-BaB{sub 2}O{sub 4} (BBO) and KBe{sub 2}BO{sub 3}F{sub 2} (KBBF). CBF exhibits excellent DUV optical properties including a short cutoff edge (155 nm), a large SHG response (∼1.9 x KDP), and a suitable birefringence that enables frequency doubling down to 171.6 nm. Remarkably, CBF melts congruently and shows an improved growth habit. In addition, our rational design strategy will contribute to the discovery of DUV NLO materials. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via Al-composition graded quantum wells

    Science.gov (United States)

    Lu, Lin; Zhang, Yu; Xu, Fujun; Ding, Gege; Liu, Yuhang

    2018-06-01

    Characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with step-like and Al-composition graded quantum wells have been investigated. The simulation results show that compared to DUV-LEDs with the conventional AlGaN multiple quantum wells (MQWs) structure, the light output power (LOP) and efficiency droop of DUV-LEDs with the Al-composition graded wells were remarkably improved. The key factor accounting for the improved performance is ascribed to the better modulation of carrier distribution in the quantum wells to increase the overlap between electron and hole wavefunctions, which contributes to more efficient recombination of electrons and holes, and thereby a significant enhancement in the LOP.

  4. CsB_4O_6F. A congruent-melting deep-ultraviolet nonlinear optical material by combining superior functional units

    International Nuclear Information System (INIS)

    Wang, Xuefei; Wang, Ying; Zhang, Bingbing; Zhang, Fangfang; Yang, Zhihua; Pan, Shilie

    2017-01-01

    The discovery of new nonlinear optical (NLO) materials for coherent light generation in the deep-ultraviolet (DUV, wavelength below 200 nm) region is essential for the development of laser technologies. Herein, we report a new material CsB_4O_6F (CBF), which combines the superior structural properties of two well-known NLO materials, β-BaB_2O_4 (BBO) and KBe_2BO_3F_2 (KBBF). CBF exhibits excellent DUV optical properties including a short cutoff edge (155 nm), a large SHG response (∼1.9 x KDP), and a suitable birefringence that enables frequency doubling down to 171.6 nm. Remarkably, CBF melts congruently and shows an improved growth habit. In addition, our rational design strategy will contribute to the discovery of DUV NLO materials. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

    KAUST Repository

    Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao; Li, Jinmin

    2015-01-01

    In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

  6. AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

    KAUST Repository

    Yan, Jianchang

    2015-03-01

    In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

  7. Ab initio studies on the optical effects in the deep ultraviolet nonlinear optical crystals of the KBe2BO3F2 family

    International Nuclear Information System (INIS)

    Kang Lei; Luo Siyang; Huang Hongwei; Lin, Z S; Chen, C T; Zheng Tao

    2012-01-01

    Electronic structures of the deep ultraviolet nonlinear optical crystals of the KBe 2 BO 3 F 2 (KBBF) family, including KBBF, RbBe 2 BO 3 F 2 and CsBe 2 BO 3 F 2 , have been investigated based on a plane-wave pseudopotential method. Their linear and nonlinear optical coefficients are also calculated, and are in good agreement with the experimental results. A real-space atom-cutting method is adopted to analyze the respective contributions of the alkali metal cations and anionic groups to optical response. The results show that the contributions of anionic groups to the nonlinear optical anisotropic responses are dominant, but the influence of the A-site alkali metal cations becomes slightly more pronounced with the increase of their radius. Moreover, the birefringence difference among these crystals strongly depends on the volume effect, i.e., the spatial density of the (BO 3 ) 3- anionic groups. (paper)

  8. Enhancing Hybrid Perovskite Detectability in the Deep Ultraviolet Region with Down-Conversion Dual-Phase (CsPbBr3-Cs4PbBr6) Films.

    Science.gov (United States)

    Tong, Guoqing; Li, Huan; Zhu, Zhifeng; Zhang, Yan; Yu, Linwei; Xu, Jun; Jiang, Yang

    2018-04-05

    Hybrid perovskite photodetectors (PDs) exhibit outstanding performance in the ultraviolet-visible (UV-vis) spectrum but have poor detectability in the deep ultraviolet (DUV) region (200-350 nm). In this work, a novel inorganic-hybrid architecture that incorporates a dual-phase (CsPbBr 3 -Cs 4 PbBr 6 ) inorganic perovskite material as a down-conversion window layer and a hybrid perovskite as a light capture layer was prepared to achieve faster, highly sensitive photodetection in the DUV spectrum. A dual-phase inorganic perovskite film coated on the back surface of the photodetector enables strong light absorption and tunes the incident energy into emission bands that are optimized for the perovskite photodetector. The presence of Cs 4 PbBr 6 enhances the capture and down-conversion of the incident DUV light. Due to the down-conversion and transport of the DUV photons, a self-driven perovskite photodetector with this composite structure exhibits a fast response time of 7.8/33.6 μs and a high responsivity of 49.4 mA W -1 at 254 nm without extra power supply.

  9. Picosecond green and deep ultraviolet pulses generated by a high-power 100 kHz thin-disk laser

    Czech Academy of Sciences Publication Activity Database

    Novák, Ondřej; Turčičová, Hana; Smrž, Martin; Miura, Taisuke; Endo, Akira; Mocek, Tomáš

    2016-01-01

    Roč. 41, č. 22 (2016), s. 5210-5213 ISSN 0146-9592 R&D Projects: GA MŠk ED2.1.00/01.0027; GA MŠk LO1602; GA MŠk EE2.3.30.0057 Grant - others:HILASE(XE) CZ.1.05/2.1.00/01.0027; OP VK 4 POSTDOK(XE) CZ.1.07/2.3.00/30.0057 Institutional support: RVO:68378271 Keywords : lasers * diode-pumped * ultraviolet Subject RIV: BH - Optics, Masers, Lasers Impact factor: 3.416, year: 2016

  10. Modeling of the Radial Heat Flow and Cooling Processes in a Deep Ultraviolet Cu+ Ne-CuBr Laser

    Directory of Open Access Journals (Sweden)

    Iliycho Petkov Iliev

    2009-01-01

    Full Text Available An improved theoretical model of the gas temperature profile in the cross-section of an ultraviolet copper ion excited copper bromide laser is developed. The model is based on the solution of the one-dimensional heat conduction equation subject to special nonlinear boundary conditions, describing the heat interaction between the laser tube and its surroundings. It takes into account the nonuniform distribution of the volume power density along with the radius of the laser tube. The problem is reduced to the boundary value problem of the first kind. An explicit solution of this model is obtained. The model is applied for the evaluation of the gas temperature profiles of the laser in the conditions of free and forced air-cooling. Comparison with other simple models assumed constant volume power density is made. In particular, a simple expression for calculating the average gas temperature is found.

  11. A SEARCH FOR LYMAN BREAK GALAXIES IN THE CHANDRA DEEP FIELD SOUTH USING SWIFT ULTRAVIOLET/OPTICAL TELESCOPE

    International Nuclear Information System (INIS)

    Basu-Zych, Antara R.; Hornschemeier, Ann E.; Hoversten, Erik A.; Gronwall, Caryl; Lehmer, Bret

    2011-01-01

    While the Swift satellite is primarily designed to study gamma-ray bursts, its ultraviolet and optical imaging and spectroscopy capabilities are also being used for a variety of scientific programs. In this study, we use the UV/Optical Telescope (UVOT) instrument on board Swift to discover 0.5 2 at >60 ks exposure time, achieving a limiting magnitude of u * /M sun ) = 9.4 ± 0.6, which is slightly lower than z ∼ 3 LBGs ((logM * /Ms un ) = 10.2 ± 0.4) and slightly higher compared with the z ∼ 1 CDF-S galaxies ((logM * /M sun ) = 8.7 ± 0.7). Similarly, our sample of z ∼ 1 LBGs has SFRs (derived using both ultraviolet and infrared data, where available) of (logSFR/(M sun yr -1 )) = 0.7 ± 0.6, nearly an order of magnitude lower than z ∼ 3 LBGs ((logSFR/M sun yr -1 ) = 1.5 ± 0.4), but slightly higher than the comparison z ∼ 1 sample of CDF-S galaxies ((logSFR/M sun yr -1 ) = 0.2 ± 0.7). We find that our z ∼ 1 UV-dropouts have (A FUV ) = 2.0 ± 1.0, which is higher than z ∼ 3 LBGs ((A FUV ) = 1.0 ± 0.5), but similar to the distribution of dust attenuations in the other CDF-S galaxies ((A FUV ) ∼ 2.8 ± 1.5). Using the GOODS-South multiwavelength catalog of galaxies, we simulate a larger and fainter sample of LBGs to compare their properties with those of the UVOT-selected LBG sample. We conclude that UVOT can be useful for finding and studying the bright end of 0.5 < z < 2.0 LBGs.

  12. Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

    KAUST Repository

    Ben Slimane, Ahmed; Najar, Adel; Ooi, Boon S.; Shen, Chao; Anjum, Dalaver H.; San-Romá n-Alerigi, Damiá n P.; Ng, Tien Khee

    2013-01-01

    We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed

  13. Photoluminescence properties and energy transfer in Ce(3+) /Dy(3+) co-doped Sr(3) MgSi(2) O(8) phosphors for potential application in ultraviolet white light-emitting diodes.

    Science.gov (United States)

    Yu, Hong; Zi, Wenwen; Lan, Shi; Gan, Shucai; Zou, Haifeng; Xu, Xuechun; Hong, Guangyan

    2013-01-01

    Sr(3) MgSi(2) O(8) :Ce(3+) , Dy(3+) phosphors were prepared by a solid-state reaction technique and the photoluminescence properties were investigated. The emission spectra show not only a band due to Ce(3+) ions (403 nm) but also as a band due to Dy(3+) ions (480, 575 nm) (UV light excitation). The photoluminescence properties reveal that effective energy transfer occurs in Ce(3+) /Dy(3+) co-doped Sr(3) MgSi(2) O(8)phosphors, and the co-doping of Ce(3+) could enhance the emission intensity of Dy(3+) to a certain extent by transferring its energy to Dy(3+) . The Ce(3+) /Dy(3+) energy transfer was investigated by emission/excitation spectra, and photoluminescence decay behaviors. In Sr2.94 MgSi2 O8 :0.01Ce(3+) , 0.05Dy(3+) phosphors, the fluorescence lifetime of Dy(3+) (from 3.35 to 27.59 ns) is increased whereas that of Ce(3+) is greatly decreased (from 43.59 to 13.55 ns), and this provides indirect evidence of the Ce(3+) to Dy(3+) energy transfer. The varied emitted color of Sr(3) MgSi(2) O(8):Ce(3+) , Dy(3+) phosphors from blue to white were achieved by altering the concentration ratio of Ce(3+) and Dy(3+) . These results indicate Sr(3) MgSi(2) O(8):Ce(3+) , Dy(3+) may be as a candidate phosphor for white light-emitting diodes. Copyright © 2012 John Wiley & Sons, Ltd.

  14. Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study

    Science.gov (United States)

    Nagai, Shoko; Yamada, Kiho; Hirano, Akira; Ippommatsu, Masamichi; Ito, Masahiro; Morishima, Naoki; Aosaki, Ko; Honda, Yoshio; Amano, Hiroshi; Akasaki, Isamu

    2016-08-01

    To replace mercury lamps with AlGaN-based deep-ultraviolet (DUV) LEDs, a simple and low-cost package with increased light extraction efficiency (LEE) is indispensable. Therefore, resin encapsulation is considered to be a key technology. However, the photochemical reactions induced by DUV light cause serious problems, and conventional resins cannot be used. In the former part of this study, a comparison of a silicone resin and fluorine polymers was carried out in terms of their suitability for encapsulation, and we concluded that only one of the fluorine polymers can be used for encapsulation. In the latter part, the endurance of encapsulation using the selected fluorine polymer was investigated, and we confirmed that the selected fluorine polymer can guarantee a lifetime of over 6,000 h at a wavelength of 265 nm. Furthermore, a 3 × 4 array module of encapsulated dies on a simple AlN submount was fabricated, demonstrating the possibility of W/cm2-class lighting.

  15. Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

    International Nuclear Information System (INIS)

    Moseley, Michael; Allerman, Andrew; Crawford, Mary; Wierer, Jonathan J.; Smith, Michael; Biedermann, Laura

    2014-01-01

    Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al 0.7 Ga 0.3 N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these open-core threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al 0.7 Ga 0.3 N templates are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations

  16. Improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes using electron blocking layer with a heart-shaped graded Al composition

    Science.gov (United States)

    Kwon, M. R.; Park, T. H.; Lee, T. H.; Lee, B. R.; Kim, T. G.

    2018-04-01

    We propose a design for highly efficient AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using a heart-shaped graded Al composition electron-blocking layer (EBL). This novel structure reduced downward band bending at the interface between the last quantum barrier and the EBL and flattened the electrostatic field in the interlayer between the barriers of the multi-quantum barrier EBL. Consequently, electron leakage was significantly suppressed and hole injection efficiency was found to have improved. The parameter values of simulation were extracted from the experimental data of the reference DUV LEDs. Using the SimuLED, we compared the electrical and optical properties of three structures with different Al compositions in the active region and the EBL. The internal quantum efficiency of the proposed structure was shown to exceed those of the reference DUV LEDs by a factor of 1.9. Additionally, the output power at 20 mA was found to increase by a factor of 2.1.

  17. Simulation of the influence of line edge roughness on the performance of deep ultraviolet wire grid polarizers

    Science.gov (United States)

    Siefke, Thomas; Rojas Hurtado, Carol B.; Dickmann, Johannes; Heusinger, Martin; Kroker, Stefanie

    2017-06-01

    Controlling the polarization of light is crucial in numerous applications such as spectroscopy, ellipsometry, photo lithography or industrial vision. Polarization control can be realized by wire grid polarizers (WGPs), which are large aspect ratio, zero order gratings. These elements provide an anisotropic transmittance depending on the polarization direction of the incident light. WGPs' high attractiveness originates from their large free aperture, while simultaneously being extremely thin. Furthermore, these elements can be easily integrated into other nano-optical devices. Recently, such elements were successfully developed for applications down to the deep ultra violet spectral range. However, at shorter wavelengths the influence of roughness of the structures poses a severe limitation on the feasible optical performance. To tackle this problem, we numerically simulated the impact of line edge roughness on the polarization properties of WPGs. Therefore, we generated edge position data of rough grating lines by means of the Thorsos method and calculated the resulting optical response by finite difference time domain method. With this procedure the influence of standard deviation, correlation length, Hurst exponents and wavelength was investigated. We find that for standard deviations of 2.5 nm and 5.0 nm the polarization contrast is reduced by a factor of 3 and 7, respectively. The polarization contrast shows a minimum for intermediate correlation lengths, while virtually no impact of the Hurst exponent is observed. This is explained by several mechanisms occurring for different ratios between the spatial frequency of the roughness and the frequency of incident light. Our theoretical findings correlate well with experimental results we retrieved with measured roughness parameters of fabricated elements.

  18. Multicolor photoluminescence in ITQ-16 zeolite film

    KAUST Repository

    Chen, Yanli

    2016-09-07

    Exploring the native defects of zeolites is highly important for understanding the properties of zeolites, such as catalysis and optics. Here, ITQ-16 films were prepared via the secondary growth method in the presence of Ge atoms. Various intrinsic defects of ITQ-16 films were fully studied through photoluminescence and FTIR characterizations. It was found that both the as-synthesized and calcined ITQ-16 films displayed multicolor photoluminescence including ultraviolet, blue, green and red emissions by exciting upon appropriate wavelengths. The results indicate that Si―OH and non-bridging oxygen hole centers(NBOHCs) are responsible for the origin of green and red emissions at 540―800 nm, while according to a variety of emission bands of calcined ITQ-16 film, blue emission bands at around 446 and 462 nm are attributed to peroxy free radicals(≡SiO2), ultraviolet emissions ranging from 250 nm to 450 nm are suggested originating from a singlet-to-triplet transition of two-fold-coordinated Si and Ge, respectively. © 2016, Jilin University, The Editorial Department of Chemical Research in Chinese Universities and Springer-Verlag GmbH.

  19. Investigation of the mechanism responsible for the photoluminescence enhancement with Li+ co-doping in highly thermally stable white-emitting Sr8ZnSc(PO4)7:Dy3+ phosphor

    International Nuclear Information System (INIS)

    Gou, Jing; Fan, Jingyan; Luo, Meng; Zuo, Shengnan

    2017-01-01

    The strategy of co-doping Li + was used with the aim of enhancing the emission intensities of Sr 8 ZnSc(PO 4 ) 7 under near ultraviolet excitation. The luminescence enhancement was related to the deep defects V O ¨ which were produced by the introduction of Li + ion. Furthermore, much deep V O ¨ were produced with the incorporation amount of Li + ion increasing. As the sensitizer, the produced deep V O ¨ can effectively tunnelling transfer energy to the nearby activator Dy 3+ resulting in the photoluminescence enhancement in SZSPO:1.5%Dy 3+ ,5%Li + . In addition, its yellow/blue emitting ratio and photoluminescent quantum yields both were improved under longer wavelength excitation. Furthermore, the excellent thermal stability of optimal SZSPO:1.5%Dy 3+ ,5%Li + excelled over commercial phosphor DS-200 below 225 °C. The electroluminescence properties of fabricated ABPD-WLED reach the optimum with V=10 V and I=800 mA (λ ex =365 nm) or 700 mA (λ ex =388 nm), then the bright white luminescence can be obviously observed. These photoluminescence, electroluminescence and thermal properties testified the potential application of Sr 8 ZnSc(PO 4 ) 7 :1.5%Dy 3+ ,5%Li + as a new-style warm-white emitting LEDs phosphor. - Graphical abstract: The mechanism of the luminescence enhancement is consider as that a little amount introduction of Li + ion can produce defects Li Zn ′ and oxygen vacancies V O ¨, and with the incorporation amount of Li + increasing, the more deep V O ¨ are produced. As sensitizer, the productive deeper V O ¨ can effectively tunneling transfer energy to nearby activator Dy 3+ inducing its photoluminescence enhancement.

  20. Photoluminescence of Diamondoid Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Clay, William; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Sasagawa, Takao; Iwasa, Akio; /TIT, Nagatsuta; Liu, Zhi; /LBNL, ALS; Dahl, Jeremy E.; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Carlson, Robert M.K.; /Molecular Diamond Technologies, Chevron Technology Ventures; Kelly, Michael; Melos, Nicholas; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab.; Shen, Zhi-Xun; /Stanford U., Phys. Dept. /Stanford U., Appl. Phys. Dept. /Stanford U., Geballe Lab. /SIMES, Stanford

    2012-04-03

    The photoluminescence of diamondoids in the solid state is examined. All of the diamondoids are found to photoluminesce readily with initial excitation wavelengths ranging from 233 nm to 240 nm (5.3 eV). These excitation energies are more than 1 eV lower than any previously studied saturated hydrocarbon material. The emission is found to be heavily shifted from the absorption, with emission wavelengths of roughly 295 nm (4.2 eV) in all cases. In the dissolved state, however, no uorescence is observed for excitation wavelengths as short as 200 nm. We also discuss predictions and measurements of the quantum yield. Our predictions indicate that the maximum yield may be as high as 25%. Our measurement of one species, diamantane, gives a yield of 11%, the highest ever reported for a saturated hydrocarbon, even though it was likely not at the optimal excitation wavelength.

  1. Effect of growth temperature on photoluminescence and piezoelectric characteristics of ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Water, Walter [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Fang, T.-H. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China); Institute of Mechanical and Electromechanical Engineering, National Formosa University, Yunlin 632, Taiwan (China)], E-mail: fang.tehua@msa.hinet.net; Ji, L.-W.; Lee, C.-C. [Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan (China)

    2009-02-25

    ZnO nanowire arrays were synthesized on Au-coated silicon (1 0 0) substrates by using vapour-liquid-solid process in this work. The effect of growth temperatures on the crystal structure and the surface morphology of ZnO nanowires were investigated by X-ray diffraction and scanning electron microscope. The absorption and optical characteristics of the nanowires were examined by Ultraviolet/Visible spectroscopy, and photoluminescence, respectively. The photoluminescence results exhibited ZnO nanowires had an ultraviolet and blue emission at 383 and 492 nm. Then a nanogenerator with ZnO nanowire arrays was fabricated and demonstrated Schottky-like current-voltage characteristics.

  2. Ultraviolet Extensions

    Science.gov (United States)

    2008-01-01

    [figure removed for brevity, see original site] Side-by-Side Comparison Click on image for larger view This ultraviolet image from NASA's Galaxy Evolution Explorer shows the Southern Pinwheel galaxy, also know as Messier 83 or M83. It is located 15 million light-years away in the southern constellation Hydra. Ultraviolet light traces young populations of stars; in this image, young stars can be seen way beyond the main spiral disk of M83 up to 140,000 light-years from its center. Could life exist around one of these far-flung stars? Scientists say it's unlikely because the outlying regions of a galaxy are lacking in the metals required for planets to form. The image was taken at scheduled intervals between March 15 and May 20, 2007. It is one of the longest-exposure, or deepest, images ever taken of a nearby galaxy in ultraviolet light. Near-ultraviolet light (or longer-wavelength ultraviolet light) is colored yellow, and far-ultraviolet light is blue. What Lies Beyond the Edge of a Galaxy The side-by-side comparison shows the Southern Pinwheel galaxy, or M83, as seen in ultraviolet light (right) and at both ultraviolet and radio wavelengths (left). While the radio data highlight the galaxy's long, octopus-like arms stretching far beyond its main spiral disk (red), the ultraviolet data reveal clusters of baby stars (blue) within the extended arms. The ultraviolet image was taken by NASA's Galaxy Evolution Explorer between March 15 and May 20, 2007, at scheduled intervals. Back in 2005, the telescope first photographed M83 over a shorter period of time. That picture was the first to reveal far-flung baby stars forming up to 63,000 light-years from the edge of the main spiral disk. This came as a surprise to astronomers because a galaxy's outer territory typically lacks high densities of star-forming materials. The newest picture of M83 from the Galaxy Evolution Explorer is shown at the right, and was taken over a longer period of time. In fact, it is one of the

  3. Ultraviolet sterilization

    International Nuclear Information System (INIS)

    Schenck, G.O.

    1987-01-01

    Artificial ultraviolet radiation sources can supply bactericidal energy in such a high dosage that in less than a second a higher degree of disinfection is accomplished than by sun irradiation in hours. Bacteria, viruses, phages, and organic micropollutants can be degraded by photochemical wet combustion down to and below detection limits of organic carbon. There are no known ultraviolet-resistant microorganisms. There are limitations to ultraviolet treatment which can often be overcome by adequate technical measures. Unlike other water purification processes, ultraviolet irradiation only exterminates living organisms. The radiation must be able to penetrate to the objects of the kill; in a dose large enough to kill, and long enough to kill and prevent new growth. Contrary to filters, ultraviolet flow-through reactors do not restrict free flow significantly. In contrast to distillation, ultraviolet irradiation imposes no phase changes to the water. Used as a sequence in ultrapure water systems, maintenance requirements are virtually nonexistent; because of the absence of dissolved and particulate matter in purified water, mechanical cleaning of the photoreactor chambers is not essential. The process is highly economical; energy consumption is low and supervision minimal. 103 refs., 45 figs., 15 tabs

  4. Strong white photoluminescence from annealed zeolites

    International Nuclear Information System (INIS)

    Bai, Zhenhua; Fujii, Minoru; Imakita, Kenji; Hayashi, Shinji

    2014-01-01

    The optical properties of zeolites annealed at various temperatures are investigated for the first time. The annealed zeolites exhibit strong white photoluminescence (PL) under ultraviolet light excitation. With increasing annealing temperature, the emission intensity of annealed zeolites first increases and then decreases. At the same time, the PL peak red-shifts from 495 nm to 530 nm, and then returns to 500 nm. The strongest emission appears when the annealing temperature is 500 °C. The quantum yield of the sample is measured to be ∼10%. The PL lifetime monotonously increases from 223 μs to 251 μs with increasing annealing temperature. The origin of white PL is ascribed to oxygen vacancies formed during the annealing process. -- Highlights: • The optical properties of zeolites annealed at various temperatures are investigated. • The annealed zeolites exhibit strong white photoluminescence. • The maximum PL enhancement reaches as large as 62 times. • The lifetime shows little dependence on annealing temperature. • The origin of white emission is ascribed to the oxygen vacancies

  5. Band-to-band and inner shell excitation VIS-UV photoluminescence of quaternary InAlGaN alloys

    International Nuclear Information System (INIS)

    Fukui, K.; Naoe, S.; Okada, K.; Hamada, S.; Hirayama, H.

    2006-01-01

    Visible and ultraviolet photoluminescence and photoluminescence excitation spectra of quaternary InAlGaN alloys were measured. The excitation photon energy covers from band edge to 180 eV, near both nitrogen K (∝400 eV) and aluminium K (∝1.5 keV) inner shell energy region. From photoluminescence excitation spectra photoluminescence intensity per incident photon number varies in proportion to incident photon energy. This result implies that many conduction band electron - valence band hole pairs which are responsible for photoluminescence are produced by high energy excitation. Time resolved decay curves were also measured in the same energy region. No effect of high energy excitation on time resolved decay measurements suggests a role of indium on the photoluminescence mechanism in InAlGaN system. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, Shin-ichiro, E-mail: s-inoue@nict.go.jp [Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492 (Japan); Naoki, Tamari [Advanced ICT Research Institute, National Institute of Information and Communications Technology (NICT), Kobe, Hyogo 651-2492 (Japan); Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247 (Japan); Kinoshita, Toru; Obata, Toshiyuki; Yanagi, Hiroyuki [Tsukuba Research Laboratories, Tokuyama Corporation, Tsukuba, Ibaraki 300-4247 (Japan)

    2015-03-30

    Deep-ultraviolet (DUV) aluminum gallium nitride-based light-emitting diodes (LEDs) on transparent aluminum nitride (AlN) substrates with high light extraction efficiency and high power are proposed and demonstrated. The AlN bottom side surface configuration, which is composed of a hybrid structure of photonic crystals and subwavelength nanostructures, has been designed using finite-difference time-domain calculations to enhance light extraction. We have experimentally demonstrated an output power improvement of up to 196% as a result of the use of the embedded high-light-extraction hybrid nanophotonic structure. The DUV-LEDs produced have demonstrated output power as high as 90 mW in DC operation at a peak emission wavelength of 265 nm.

  7. Characterization of CdSe polycrystalline films by photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Brasil, M.J.S.P.

    1985-01-01

    The characterization of CdSe polycristalline films were done by photoluminescence spectroscopy, X-ray diffraction analysis, diagrams IxV, and efficiency of solar energy conversion for cells done by these films. The experimental data shown strong temperature dependence of annealing, and the optimum temperature around 650 0 C was determined. The films did not present photoluminescence before heat treatment, but the annealed sample spectrum showed fine structures in the excitonic region, crystal phase transformation, enhancement of grain size, and better efficiency of the cell. Measurements of photoluminescence between 2 and 300 K, showed two bands of infrared emission, width and intense enough. The shape, at half-width, and the integrated intensity of one these bands were described by a configuration coordinate model for deep centers. Based on obtained results, some hypothesis about the origin of these bands and its correlation with efficiency of cells done with CdSe polycrystalline films, are proposed. (M.C.K.) [pt

  8. Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes.

    Science.gov (United States)

    Kim, Kyeong Heon; Kim, Su Jin; Park, Sang Young; Kim, Tae Geun

    2015-10-01

    The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples--an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture--were prepared and annealed at different temperatures ranging from 100 °C to 500 °C for comparison. Among these samples, the sample annealed at 300 °C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/square and a high UV transmittance of 87.1% at 300 nm.

  9. Room-temperature synthesis and photoluminescence of hexagonal CePO4 nanorods

    Science.gov (United States)

    Zhu, J.; Zhang, K.; Zhao, H. Y.

    2018-01-01

    Hexagonal CePO4 nanorods were synthesized via a simple chemical precipitation route at room-temperature without the presence of surfactants and then characterized by powder X-ray diffraction (XRD), energy-dispersive X-ray (EDX) spectrometry, scanning electron microscopy (SEM), transmission electron microscopy (TEM), ultraviolet-visible (UV-vis) absorption and photoluminescence (PL) spectroscopy. Hexagonal CePO4 nanorods exhibit strong ultraviolet absorption and ultraviolet luminescence, which correspond to the electronic transitions between 4f and 5d state of Ce3+ ions.

  10. NH4 Be2 BO3 F2 and γ-Be2 BO3 F: Overcoming the Layering Habit in KBe2 BO3 F2 for the Next-Generation Deep-Ultraviolet Nonlinear Optical Materials.

    Science.gov (United States)

    Peng, Guang; Ye, Ning; Lin, Zheshuai; Kang, Lei; Pan, Shilie; Zhang, Min; Lin, Chensheng; Long, Xifa; Luo, Min; Chen, Yu; Tang, Yu-Huan; Xu, Feng; Yan, Tao

    2018-05-12

    KBe 2 BO 3 F 2 (KBBF) is still the only practically usable crystal that can generate deep-ultraviolet (DUV) coherent light by direct second harmonic generation (SHG). However, applications are hindered by layering, leading to difficulty in the growth of thick crystals and compromised mechanical integrity. Despite efforts, it is still a great challenge to discover new nonlinear optical (NLO) materials that overcome the layering while keeping the DUV SHG available. Now, two new DUV NLO beryllium borates have been successfully designed and synthesized, NH 4 Be 2 BO 3 F 2 (ABBF) and γ-Be 2 BO 3 F (γ-BBF), which not only overcome the layering but also can be used as next-generation DUV NLO materials with the shortest type I phase-matching second-harmonic wavelength down to 173.9 nm and 146 nm, respectively. Significantly, γ-BBF is superior to KBBF in all metrics and would be the most outstanding DUV NLO crystal. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Solar ultraviolet hazards

    International Nuclear Information System (INIS)

    Azmah Ali

    1995-01-01

    The paper discussed the following subjects: the sources of ultraviolet radiation, solar ultraviolet radiation definition, effects of over exposure to solar ultraviolet radiation, exposure limits and radiation protection of this radiation

  12. Extreme Ultraviolet Explorer Bright Source List

    Science.gov (United States)

    Malina, Roger F.; Marshall, Herman L.; Antia, Behram; Christian, Carol A.; Dobson, Carl A.; Finley, David S.; Fruscione, Antonella; Girouard, Forrest R.; Hawkins, Isabel; Jelinsky, Patrick

    1994-01-01

    Initial results from the analysis of the Extreme Ultraviolet Explorer (EUVE) all-sky survey (58-740 A) and deep survey (67-364 A) are presented through the EUVE Bright Source List (BSL). The BSL contains 356 confirmed extreme ultraviolet (EUV) point sources with supporting information, including positions, observed EUV count rates, and the identification of possible optical counterparts. One-hundred twenty-six sources have been detected longward of 200 A.

  13. SYNTHESIS AND PHOTOLUMINESCENCE STUDIES ON ZINC OXIDE NANOWIRES

    Directory of Open Access Journals (Sweden)

    Nguyen Ngoc Long

    2017-11-01

    Full Text Available Semiconductor single crystal ZnO nanowires have been successfully synthesized by a simple method based on thermal evaporation of ZnO powders mixed with graphite. Metallic catalysts, carrying gases, and vacuum conditions are not necessary. The x-ray diffraction (XRD analysis shows that the ZnO nanowires are highly crystallized and have a typical wurtzite hexagonal structure with lattice constants a = 0.3246 nm and c = 0.5203 nm. The scanning electron microscopy (SEM images of nanowires indicate that diameters of the ZnO nanowires normally range from 100 to 300 nm and their lengths are several tens of micrometers. Photoluminescence (PL and photoluminescence excitation (PLE spectra of the nanowires were measured in the range of temperature from 15 K to the room temperature. Photoluminescence spectra at low temperatures exhibit a group of ultraviolet (UV narrow peaks in the region 368 nm ~ 390 nm, and a blue-green very broad peak at 500 nm. Origin of the emission lines in PL spectra and the lines in PLE spectra is discussed.

  14. Deep eutectic solvent-based ultrasound-assisted dispersive liquid-liquid microextraction coupled with high-performance liquid chromatography for the determination of ultraviolet filters in water samples.

    Science.gov (United States)

    Wang, Huazi; Hu, Lu; Liu, Xinya; Yin, Shujun; Lu, Runhua; Zhang, Sanbing; Zhou, Wenfeng; Gao, Haixiang

    2017-09-22

    In the present study, a simple and rapid sample preparation method designated ultrasound-assisted dispersive liquid-liquid microextraction based on a deep eutectic solvent (DES) followed by high-performance liquid chromatography with ultraviolet (UV) detection (HPLC-UVD) was developed for the extraction and determination of UV filters from water samples. The model analytes were 2,4-dihydroxybenzophenone (BP-1), benzophenone (BP) and 2-hydroxy-4-methoxybenzophenone (BP-3). The hydrophobic DES was prepared by mixing trioctylmethylammonium chloride (TAC) and decanoic acid (DecA). Various influencing factors (selection of the extractant, amount of DES, ultrasound duration, salt addition, sample volume, sample pH, centrifuge rate and duration) on UV filter recovery were systematically investigated. Under optimal conditions, the proposed method provided good recoveries in the range of 90.2-103.5% and relative standard deviations (inter-day and intra-day precision, n=5) below 5.9%. The enrichment factors for the analytes ranged from 67 to 76. The limits of detection varied from 0.15 to 0.30ngmL -1 , depending on the analytes. The linearities were between 0.5 and 500ngmL -1 for BP-1 and BP and between 1 and 500ngmL -1 for BP-3, with coefficients of determination greater than 0.99. Finally, the proposed method was applied to the determination of UV filters in swimming pool and river water samples, and acceptable relative recoveries ranging from 82.1 to 106.5% were obtained. Copyright © 2017. Published by Elsevier B.V.

  15. UV and air stability of high-efficiency photoluminescent silicon nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Jihua, E-mail: yangj@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Liptak, Richard [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, 5500 Wabash Ave, Terre Haute, IN 47803 (United States); Rowe, David; Wu, Jeslin [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Casey, James; Witker, David [Dow Corning Corporation, 2200 W. Salzburg Road, Midland, MI 48686 (United States); Campbell, Stephen A. [Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 (United States); Kortshagen, Uwe, E-mail: kortshagen@umn.edu [Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455 (United States)

    2014-12-30

    The effects of UV light and air exposure on the photoluminescent properties of nonthermal plasma-synthesized silicon nanocrystals (Si NCs) were investigated. Si NCs with high-efficiency photoluminescence (PL) have been achieved via a post-synthesis hydrosilylation process. Photobleaching is observed within the first few hours of ultra-violet (UV) irradiation. Equilibrium is reached after ∼4 h of UV exposure wherein the Si NCs are able to retain 52% of the initially measured PL quantum yield (PLQY). UV-treated Si NCs showed recovery of PL with time. Gas-phase passivation of Si NCs by hydrogen afterglow injection improves PLQY and PL stability against UV and air exposure. Additionally, phosphorous doping can also improve UV stability of photoluminescent Si NCs.

  16. Surface States Effect on the Large Photoluminescence Redshift in GaN Nanostructures

    KAUST Repository

    Ben Slimane, Ahmed

    2013-01-01

    We report on the large photoluminescence redshift observed in nanostructures fabricated using n-type GaN by ultraviolet (UV) metal-assisted electroless chemical-etching method. The scanning electron microscopy (SEM) characterization showed nanostructures with size dispersion ranging from 10 to 100 nm. We observed the crystalline structure using high resolution transmission electron microscopy (HRTEM) and electron energy loss (EELS) techniques. In contrast to 362 nm UV emission from the GaN epitaxy, the nanostructures emitted violet visible-light in photoluminescence (PL) characterization with increasing optical excitation. An energy band model was presented to shed light on the large PL redshift under the influence of surface states, which resulted in two competing photoluminescence mechanisms depending on excitation conditions.

  17. Ultraviolet radiation

    International Nuclear Information System (INIS)

    Hawk, J.

    1986-01-01

    Ultraviolet radiation (UVR) from the sun or artificial sources is reflected or transmitted at the surface of the skin, about 5% of normally incident rays being directly reflected. The transmitted fraction is scattered, photochemically absorbed or dissipated as heat within the skin, or passes from it to contribute to the variable total amount of reflected and transmitted radiation. The UVR absorbers in skin are not definitely known, but DNA is a definite target and probably lipoprotein membranes, RNA, proteins, mucopolysaccharides, elastin and collagen. Photochemical or free radical damage to absorber or nearby organelles leads to pharmacological, ultrastructural, histological and clinical changes. Most frequent DNA damage is pyrimidine dimer formation, apparently inhibiting cell function and replication. This is largely enzymatically repaired in man in the dark by excision repair, post-replication repair and possible other enzymatic mechanisms, and at least in some organisms by light-induced photoreactivation repair. UVR exposure causes well recognized acute and chronic clinical syndromes in man. These are discussed in this paper

  18. Photoluminescence study of aligned ZnO nanorods grown using chemical bath deposition

    International Nuclear Information System (INIS)

    Urgessa, Z.N.; Oluwafemi, O.S.; Dangbegnon, J.K.; Botha, J.R.

    2012-01-01

    The photoluminescence study of self-assembled ZnO nanorods grown on a pre-treated Si substrate by a simple chemical bath deposition method at a temperature of 80 °C is hereby reported. By annealing in O 2 environment the UV emission is enhanced with diminishing deep level emission suggesting that most of the deep level emission is due to oxygen vacancies. The photoluminescence was investigated from 10 K to room temperature. The low temperature photoluminescence spectrum is dominated by donor-bound exciton. The activation energy and binding energy of shallow donors giving rise to bound exciton emission were calculated to be around 13.2 meV, 46 meV, respectively. Depending on these energy values and nature of growth environment, hydrogen is suggested to be the possible contaminating element acting as a donor.

  19. Photoluminescence study of aligned ZnO nanorods grown using chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Urgessa, Z.N. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Oluwafemi, O.S. [Department of Chemistry and Chemical Technology, Walter Sisulu University, Mthatha Campus, Private Bag XI, 5117 (South Africa); Dangbegnon, J.K. [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Botha, J.R., E-mail: Reinhardt.Botha@nmmu.ac.za [Department of Physics, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2012-05-15

    The photoluminescence study of self-assembled ZnO nanorods grown on a pre-treated Si substrate by a simple chemical bath deposition method at a temperature of 80 Degree-Sign C is hereby reported. By annealing in O{sub 2} environment the UV emission is enhanced with diminishing deep level emission suggesting that most of the deep level emission is due to oxygen vacancies. The photoluminescence was investigated from 10 K to room temperature. The low temperature photoluminescence spectrum is dominated by donor-bound exciton. The activation energy and binding energy of shallow donors giving rise to bound exciton emission were calculated to be around 13.2 meV, 46 meV, respectively. Depending on these energy values and nature of growth environment, hydrogen is suggested to be the possible contaminating element acting as a donor.

  20. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Sahraoui

    2015-04-09

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  1. Colloidal Photoluminescent Amorphous Porous Silicon, Methods Of Making Colloidal Photoluminescent Amorphous Porous Silicon, And Methods Of Using Colloidal Photoluminescent Amorphous Porous Silicon

    KAUST Repository

    Chaieb, Saharoui; Mughal, Asad Jahangir

    2015-01-01

    Embodiments of the present disclosure provide for a colloidal photoluminescent amorphous porous silicon particle suspension, methods of making a colloidal photoluminescent amorphous porous silicon particle suspension, methods of using a colloidal photoluminescent amorphous porous silicon particle suspension, and the like.

  2. Implementation of Deep Ultraviolet Raman Spectroscopy

    DEFF Research Database (Denmark)

    Liu, Chuan

    of the aromatics, Toluene and Naphthalene, in the gasoline. Chapter 6 shows examples of other applications of DUV Raman spectroscopy, for instance for the illegal red food additive: Sudan I. For this dye Raman spectra - useful to indicate an unwanted presence - could not be obtained with green or blue laser line...... Raman spectrometry was further applied to detect another illegal food additive, Melamine, in milk sample. It was shown that the DUV constitutes a more sensitive measurement method than traditional Raman spectrometry and realizes a direct detection in liquid milk. In another research field regarding...... spectra of the gasoline samples. It is virtually unimportant what the rest of the sample consisted of. The most intense characteristic band is located at 1381 cm-1. The Raman spectra of home-made artificial gasoline mixtures - with gradually increasing Naphthalene contents - can be used to determine...

  3. Deep-ultraviolet cavity ringdown spectroscopy

    NARCIS (Netherlands)

    Sneep, M.C.; Hannemann, S.; van Duijn, E.J.; Ubachs, W.M.G.

    2004-01-01

    The sensitive optical detection technique of cavity ringdown spectroscopy is extended to the wavelength range 197-204 nm. A novel design narrowband Fourier-transform-limited laser is used, and the technique is applied to gas-phase extinction measurements in CO

  4. Negative thermal quenching of photoluminescence in ZnO

    International Nuclear Information System (INIS)

    Watanabe, M.; Sakai, M.; Shibata, H.; Satou, C.; Satou, S.; Shibayama, T.; Tampo, H.; Yamada, A.; Matsubara, K.; Sakurai, K.; Ishizuka, S.; Niki, S.; Maeda, K.; Niikura, I.

    2006-01-01

    We have studied photoluminescence (PL) spectra of ZnO single crystals at photon energies ranging between 2.1 and 3.4eV as a function of temperature to determine thermal quenching behavior in PL emission intensity. It appears that the deep level emissions, donor-acceptor pair emissions, and the bound excitonic emissions undergo negative thermal quenching (NTQ) at intermediate temperatures above ∼10K. By employing an NTQ formula expressed analytically as a function of temperature, we have obtained quantitative NTQ characteristics in terms of the activation energies associated with the intermediate states as well as nonradiative channels

  5. Photoluminescence of nanocrystals embedded in oxide matrices

    International Nuclear Information System (INIS)

    Estrada, C.; Gonzalez, J.A.; Kunold, A.; Reyes-Esqueda, J.A.; Pereyra, P.

    2006-12-01

    We used the theory of finite periodic systems to explain the photoluminescence spectra dependence on the average diameter of nanocrystals embedded in oxide matrices. Because of the broad matrix band gap, the photoluminescence response is basically determined by isolated nanocrystals and sequences of a few of them. With this model we were able to reproduce the shape and displacement of the experimentally observed photoluminescence spectra. (author)

  6. Thermally stimulated luminescence and photoluminescence ...

    Indian Academy of Sciences (India)

    2012-01-13

    Jan 13, 2012 ... red to ultraviolet, which depends on the crystal structure of host materials ..... to strong anisotropic nature of the fine structure (fs) transi- tion(s), other .... 39 2065. Pan Shilie, Wu Yicheng, Fu Peizhen, Zhang Guochun, Li Zhihua,.

  7. Point-Defect Nature of the Ultraviolet Absorption Band in AlN

    Science.gov (United States)

    Alden, D.; Harris, J. S.; Bryan, Z.; Baker, J. N.; Reddy, P.; Mita, S.; Callsen, G.; Hoffmann, A.; Irving, D. L.; Collazo, R.; Sitar, Z.

    2018-05-01

    We present an approach where point defects and defect complexes are identified using power-dependent photoluminescence excitation spectroscopy, impurity data from SIMS, and density-functional-theory (DFT)-based calculations accounting for the total charge balance in the crystal. Employing the capabilities of such an experimental computational approach, in this work, the ultraviolet-C absorption band at 4.7 eV, as well as the 2.7- and 3.9-eV luminescence bands in AlN single crystals grown via physical vapor transport (PVT) are studied in detail. Photoluminescence excitation spectroscopy measurements demonstrate the relationship between the defect luminescent bands centered at 3.9 and 2.7 eV to the commonly observed absorption band centered at 4.7 eV. Accordingly, the thermodynamic transition energy for the absorption band at 4.7 eV and the luminescence band at 3.9 eV is estimated at 4.2 eV, in agreement with the thermodynamic transition energy for the CN- point defect. Finally, the 2.7-eV PL band is the result of a donor-acceptor pair transition between the VN and CN point defects since nitrogen vacancies are predicted to be present in the crystal in concentrations similar to carbon-employing charge-balance-constrained DFT calculations. Power-dependent photoluminescence measurements reveal the presence of the deep donor state with a thermodynamic transition energy of 5.0 eV, which we hypothesize to be nitrogen vacancies in agreement with predictions based on theory. The charge state, concentration, and type of impurities in the crystal are calculated considering a fixed amount of impurities and using a DFT-based defect solver, which considers their respective formation energies and the total charge balance in the crystal. The presented results show that nitrogen vacancies are the most likely candidate for the deep donor state involved in the donor-acceptor pair transition with peak emission at 2.7 eV for the conditions relevant to PVT growth.

  8. Synthesis and photoluminescence property of silicon carbide ...

    Indian Academy of Sciences (India)

    Administrator

    The β-SiC nanowires thin films exhibit the strong photoluminescence (PL) peak at a wavelength of. 400 nm, which is significantly ... in the nanowires. Keywords. SiC nanowires; nanocrystalline diamond; crystal growth; photoluminescence. 1. ... unique mechanical, electrical and thermal properties. Due to the wide band gap ...

  9. Hydrothermal green synthesis of magnetic Fe3O4-carbon dots by lemon and grape fruit extracts and as a photoluminescence sensor for detecting of E. coli bacteria.

    Science.gov (United States)

    Ahmadian-Fard-Fini, Shahla; Salavati-Niasari, Masoud; Ghanbari, Davood

    2018-10-05

    The aim of this work is preparing of a photoluminescence nanostructures for rapid detection of bacterial pathogens. Firstly, carbon dots (CDs) were synthesized by grape fruit, lemon, turmeric extracts and hydrothermal method. Then Fe 3 O 4 (magnetite) nanoparticles was achieved using these bio-compatible capping agents. Finally, magnetite-carbon dots were synthesized as a novel magnetic and photoluminescence nanocomposite. X-ray diffraction (XRD) confirms the crystallinity and phase of the products, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) investigate the morphology, shape and size of the magnetite, carbon dot and nanocomposites. Fourier transform infrared (FT-IR) spectroscopy shows the purity of the nanostructures. Ultraviolet-visible (UV-Vis) absorption and photo-luminescence (PL) spectroscopy show suitable photo-luminescence under ultraviolet irradiation. Vibrating sample magnetometer (VSM) shows super paramagnetic property of the product. Interestingly carbon dots were used as a non-toxic photoluminescence sensor for detecting of Escherichia coli (E. coli) bacteria. Results show quenching of photoluminescence of the CDs nanocomposite by increasing amount of E. coli bacteria. Copyright © 2018 Elsevier B.V. All rights reserved.

  10. Gold nanoparticles: BSA (Bovine Serum Albumin) coating and X-ray irradiation produce variable-spectrum photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Kuo-Hao [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 115, Taiwan (China); Lai, Sheng-Feng [Institute of Physics, Academia Sinica, Taipei 115, Taiwan (China); Department of Engineering Science, National Cheng Kung University, Tainan 701, Taiwan (China); Lin, Yan-Cheng; Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Ong, Edwin B.L. [Institute of Physics, Academia Sinica, Taipei 115, Taiwan (China); Tan, Hui-Ru [Institute of Materials Research and Engineering, 3 Research Link, 117602 (Singapore); Tok, Eng Soon [Physics Department, National University of Singapore, 117542 (Singapore); Yang, C.S. [Center for Nanomedicine, National Health Research Institutes, Miaoli 350, Taiwan (China); Margaritondo, G. [Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Hwu, Y., E-mail: phhwu@sinica.edu.tw [Institute of Physics, Academia Sinica, Taipei 115, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China); Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 202, Taiwan (China)

    2015-01-15

    We show that by using different x-ray irradiation times of BSA-coated Au nanoparticles (NPs) we can change their ultraviolet-stimulated photoluminescence and shift the spectral weight over the visible spectral range. This is due to the interplay of two emission bands, one due to BSA and the other related to gold. The emission properties did not change with time over a period of several months. - Highlights: • Gold nanoparticles (Au NPs) coated with Bovine Serum Albumin (BSA) are synthesized by x-ray irradiation. • BSA coated AuNPs with ∼1 nm size show strong photoluminescence in red by UV excitation. • The blue photoluminescence of BSA increase with x-ray irradiation. • Increase x-ray irradiation time during the synthesis shift the color of the colloid from red to blue.

  11. Gold nanoparticles: BSA (Bovine Serum Albumin) coating and X-ray irradiation produce variable-spectrum photoluminescence

    International Nuclear Information System (INIS)

    Lee, Kuo-Hao; Lai, Sheng-Feng; Lin, Yan-Cheng; Chou, Wu-Ching; Ong, Edwin B.L.; Tan, Hui-Ru; Tok, Eng Soon; Yang, C.S.; Margaritondo, G.; Hwu, Y.

    2015-01-01

    We show that by using different x-ray irradiation times of BSA-coated Au nanoparticles (NPs) we can change their ultraviolet-stimulated photoluminescence and shift the spectral weight over the visible spectral range. This is due to the interplay of two emission bands, one due to BSA and the other related to gold. The emission properties did not change with time over a period of several months. - Highlights: • Gold nanoparticles (Au NPs) coated with Bovine Serum Albumin (BSA) are synthesized by x-ray irradiation. • BSA coated AuNPs with ∼1 nm size show strong photoluminescence in red by UV excitation. • The blue photoluminescence of BSA increase with x-ray irradiation. • Increase x-ray irradiation time during the synthesis shift the color of the colloid from red to blue

  12. Characteristics and performance of the Sunna high dose dosemeter using green photoluminescence and UV absorption readout methods

    Energy Technology Data Exchange (ETDEWEB)

    Miller, S.D.; Murphy, M.K.; Tinker, M.R.; Kovacs, A.; McLaughlin, W

    2002-07-01

    Growth in the use of ionising radiation for medical sterilisation and the potential for wide-scale international food irradiation have created the need for robust, mass-producible, inexpensive, and highly accurate radiation dosemeters. The Sunna dosemeter, lithium fluoride injection-moulded in a polyethylene matrix, can be read out using either green photoluminescence or ultraviolet (UV) absorption. The Sunna dosemeter can be mass-produced inexpensively with high precision. Both the photoluminescent and the UV absorption reader are simple and inexpensive. Both methods of analysis display negligible humidity effects, minimal dose rate dependence, acceptable post-irradiation effects, and permit measurements with a precision of nearly 1% 1s. The UV method shows negligible irradiation temperature effects from -30 deg. C to +60 deg. C. The photoluminescence method shows negligible irradiation temperature effects above room temperature for sterilisation dose levels and above. The dosimetry characteristics of these two readout methods are presented along with performance data in commercial sterilisation facilities. (author)

  13. A Review of the Synthesis and Photoluminescence Properties of Hybrid ZnO and Carbon Nanomaterials

    Directory of Open Access Journals (Sweden)

    Protima Rauwel

    2016-01-01

    Full Text Available Photoluminescent ZnO carbon nanomaterials are an emerging class of nanomaterials with unique optical properties. They each, ZnO and carbon nanomaterials, have an advantage of being nontoxic and environmentally friendly. Their cost-effective production methods along with simple synthesis routes are also of interest. Moreover, ZnO presents photoluminescence emission in the UV and visible region depending on the synthesis routes, shape, size, deep level, and surface defects. When combined with carbon nanomaterials, modification of surface defects in ZnO allows tuning of these photoluminescence properties to produce, for example, white light. Moreover, efficient energy transfer from the ZnO to carbon nanostructures makes them suitable candidates not only in energy harvesting applications but also in biosensors, photodetectors, and low temperature thermal imaging. This work reviews the synthesis and photoluminescence properties of 3 carbon allotropes: carbon quantum or nanodots, graphene, and carbon nanotubes when hybridized with ZnO nanostructures. Various synthesis routes for the hybrid materials with different morphologies of ZnO are presented. Moreover, differences in photoluminescence emission when combining ZnO with each of the three different allotropes are analysed.

  14. [The photoluminescence and absorption properties of Co/AAO nano-array composites].

    Science.gov (United States)

    Li, Shou-Yi; Wang, Cheng-Wei; Li, Yan; Wang, Jian; Ma, Bao-Hong

    2008-03-01

    Ordered Co/AAO nano-array structures were fabricated by alternating current (AC) electrodeposition method within the cylindrical pores of anodic aluminum oxide (AAO) template prepared in oxalic acid electrolyte. The photoluminescence (PL) emission and photoabsorption of AAO templates and Co/AAO nano-array structures were investigated respectively. The results show that a marked photoluminescence band of AAO membranes occurs in the wavelength range of 350-550 nm and their PL peak position is at 395 nm. And with the increase in the deposition amount of Co nanoparticles, the PL intensity of Co/AAO nano-array structures decreases gradually, and their peak positions of the PL are invariable (395 nm). Meanwhile the absorption edges of Co/AAO show a larger redshift, and the largest shift from the near ultraviolet to the infrared exceeds 380 nm. The above phenomena caused by Co nano-particles in Co/AAO composite were analyzed.

  15. Photoluminescent properties of single crystal diamond microneedles

    Science.gov (United States)

    Malykhin, Sergey A.; Ismagilov, Rinat R.; Tuyakova, Feruza T.; Obraztsova, Ekaterina A.; Fedotov, Pavel V.; Ermakova, Anna; Siyushev, Petr; Katamadze, Konstantin G.; Jelezko, Fedor; Rakovich, Yury P.; Obraztsov, Alexander N.

    2018-01-01

    Single crystal needle-like diamonds shaped as rectangular pyramids were produced by combination of chemical vapor deposition and selective oxidation with dimensions and geometrical characteristics depending on the deposition process parameters. Photoluminescence spectra and their dependencies on wavelength of excitation radiation reveal presence of nitrogen- and silicon-vacancy color centers in the diamond crystallites. Photoluminescence spectra, intensity mapping, and fluorescence lifetime imaging microscopy indicate that silicon-vacancy centers are concentrated at the crystallites apex while nitrogen-vacancy centers are distributed over the whole crystallite. Dependence of the photoluminescence on excitation radiation intensity demonstrates saturation and allows estimation of the color centers density. The combination of structural parameters, geometry and photoluminescent characteristics are prospective for advantageous applications of these diamond crystallites in quantum information processing and optical sensing.

  16. Crystal habit dependent quantum confined photoluminescence of zinc oxide nanostructures

    International Nuclear Information System (INIS)

    Arellano, Ian Harvey J.; Payawan, Leon Jr. M.; Sarmago, Roland V.

    2008-01-01

    Diverse zinc oxide crystal habits namely wire, rods, tubes, whiskers and tetrapods were synthesized via hydrothermal and carbothermal reduction routes. A vapor current induced regionalization in the carbothermal synthesis lead to the isolation of these crystal habits for characterization. The surface morphology of the nanostructures was analyzed via field emission scanning electron microscopy (FESEM). The morphology and crystallinity of the as-synthesized nanostructure architectural motifs were related to their photoluminescence (PL). The photoluminescence at 157 nm was taken using F2 excimer laser and a crystal habit dependent response was observed. X-ray diffraction (XRD) analyses were conducted to deduce the degree of crystallinity showing results consistent with the excitonic emission at the band edge and visible emission at the electron-hole recombination sites. The presence of minimal crystal defects which gave the green emission was supported by energy dispersive spectroscopy (EDS) data. Transmission spectroscopy for the tetrapods exhibited an interesting PL reduction associated with high-energy deep traps in the nanostructures. Furthermore, some intensity dependent characteristics were deduced indicating quantum confined properties of these nano structures. (author)

  17. Formation of conductive spontaneous via holes in AlN buffer layer on n+Si substrate by filling the vias with n-AlGaN by metal organic chemical vapor deposition and application to vertical deep ultraviolet photo-sensor

    Directory of Open Access Journals (Sweden)

    N. Kurose

    2014-12-01

    Full Text Available We have grown conductive aluminum nitride (AlN layers using the spontaneous via holes formation technique on an n+-Si substrate for vertical-type device fabrication. The size and density of the via holes are controlled through the crystal growth conditions used for the layer, and this enables the conductance of the layer to be controlled. Using this technique, we demonstrate the fabrication of a vertical-type deep ultraviolet (DUV photo-sensor. This technique opens up the possibility of fabrication of monolithically integrated on-chip DUV sensors and DUV light-emitting devices (LEDs, including amplifiers, controllers and other necessary functional circuits, on a Si substrate.

  18. Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

    Directory of Open Access Journals (Sweden)

    Weihuang Yang

    2013-05-01

    Full Text Available Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully.

  19. Photodetector of ultraviolet radiation

    International Nuclear Information System (INIS)

    Dorogan, V.; Branzari, V.; Vieru, T.; Manole, M.; Canter, V.

    2000-01-01

    The invention relates to photodetectors on base of semiconductors of ultraviolet radiation and may be used in optoelectronic system for determining the intensity and the dose of ultraviolet radiation emitted by the Sun or other sources. Summary of the invention consists in the fact that in the photodetector of ultraviolet radiation the superficial potential barrier is divided into two identical elements, electrically isolated each of the other, one of them being covered with a layer of transparent material for visible and infrared radiation and absorption the ultra violet radiation. The technical result consists in mutual compensation of visible and infrared components of the radiation spectrum

  20. Uv Laser Excitation for Ultra-Sensitive Photoluminescent Dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Kastner, J.; Eggenberger, D.; Longnecker, A. [Argonne National Laboratory, Argonne, IL (United States); King, D.; Schutt, D. [Radiation Laboratory, University of Notre Dame, South Bend, IN (United States)

    1967-03-15

    The factor which has limited the sensitivity of photoluminescent dosimetry has been the ''pre-dose'' background which is stimulated during readout by the usual continuous ultra-violet (UV) exposure. The signal-to-noise ratio has only been partially optimized by the selective choice of filters and optical geometry. A microdosimetric system has been conceived and investigated which is potentially capable of sensing extremely low radiation doses (of the order of microrads). This system depends on the little-known fact that the decay time for the visible luminescence, which is a measure of the absorbed dose, is at least ten times longer than the decay of the indistinguishable visible fluorescence (to UV) which is an inherent characteristic of unexposed silver phosphate glasses. The system consists of UV, 3500A, laser beam, with a Pockels cell so that it has complete cut-off in intensity in the order of nanoseconds, and gating circuitry to open the visible light-sensing photomultiplier at a sufficient time delay to prevent it from sensing the ultra-violet or the pre-dose fluorescence which decays within the order of 100 nanoseconds. In this way the signal-to-noise ratio can be vastly improved upon that obtainable by optical means. With this system the authors were easily able to measure quantitatively one milliroentgen of cobalt-60 exposure. They are of the opinion that further improvement in this system should enable them to do track visualization and/or in vivo biological microdosimetry with a spatial resolution of the order of ten microns. (author)

  1. Photoluminescent ZnO Nanoparticles and Their Biological Applications

    Directory of Open Access Journals (Sweden)

    Zheng-Yong Zhang

    2015-05-01

    Full Text Available During the past decades, numerous achievements concerning luminescent zinc oxide nanoparticles (ZnO NPs have been reported due to their improved luminescence and good biocompatibility. The photoluminescence of ZnO NPs usually contains two parts, the exciton-related ultraviolet (UV emission and the defect-related visible emission. With respect to the visible emission, many routes have been developed to synthesize and functionalize ZnO NPs for the applications in detecting metal ions and biomolecules, biological fluorescence imaging, nonlinear multiphoton imaging, and fluorescence lifetime imaging. As the biological applications of ZnO NPs develop rapidly, the toxicity of ZnO NPs has attracted more and more attention because ZnO can produce the reactive oxygen species (ROS and release Zn2+ ions. Just as a coin has two sides, both the drug delivery and the antibacterial effects of ZnO NPs become attractive at the same time. Hence, in this review, we will focus on the progress in the synthetic methods, luminescent properties, and biological applications of ZnO NPs.

  2. Photoluminescence properties of cerium oxide nanoparticles as a function of lanthanum content

    International Nuclear Information System (INIS)

    Deus, R.C.; Cortés, J.A.; Ramirez, M.A.; Ponce, M.A.; Andres, J.; Rocha, L.S.R.

    2015-01-01

    Highlights: • CeO 2 nanoparticles were obtained by microwave-hydrothermal method. • Rietveld refinement reveals a cubic structure. • KOH mineralizer agent exhibit weak agglomeration at low temperature and shorter time. - Abstract: The structural and photoluminescent properties at room temperature of CeO 2 and La-doped CeO 2 particles were undertaken. The obtained particles were synthesized by a microwave-assisted hydrothermal method (MAH) under different lanthanum contents. X-ray diffraction (XRD), Fourier transform infrared (FT-IR), Fourier transform Raman (FT-Raman), Ultra-violet spectroscopy (UV–vis) and photoluminescence (PL) measurements were carried out. XRD revealed that the powders are free of secondary phases and crystallize in the cubic structure. Raman data show that increasing La doping content increase oxygen vacancies due to lattice expansion. The UV/vis absorption spectroscopy suggested the presence of intermediate energy levels in the band gap of structurally ordered powders. Lanthanum addition creates oxygen vacancies and shifts the photoluminescence in the low energy range leading to intense PL emission

  3. Photoluminescence properties of cerium oxide nanoparticles as a function of lanthanum content

    Energy Technology Data Exchange (ETDEWEB)

    Deus, R.C. [Universidade Estadual Paulista, Unesp —Faculdade de Engenharia de Guaratinguetá, Av. Dr Ariberto Pereira da Cunha 333, Bairro Pedregulho, P.O. Box 355, 12.516-410 Guaratinguetá, São Paulo, Brazil, (Brazil); Cortés, J.A., E-mail: leandrosrr89@gmail.com [Universidade Estadual Paulista, Unesp —Faculdade de Engenharia de Guaratinguetá, Av. Dr Ariberto Pereira da Cunha 333, Bairro Pedregulho, P.O. Box 355, 12.516-410 Guaratinguetá, São Paulo, Brazil, (Brazil); Ramirez, M.A. [Universidade Estadual Paulista, Unesp —Faculdade de Engenharia de Guaratinguetá, Av. Dr Ariberto Pereira da Cunha 333, Bairro Pedregulho, P.O. Box 355, 12.516-410 Guaratinguetá, São Paulo, Brazil, (Brazil); Ponce, M.A. [Instituto de Investigaciones en Ciencia y Tecnología de Materiales (INTEMA) (CONICET-Universidad Nacional de Mar del Plata), Juan B. Justo 4302, 7600 Mar del Plata (Argentina); Andres, J. [Laboratório Interdisciplinar em Cerâmica, Instituto de Química, Universidade Estadual Paulista, P.O. Box 355, 14801-907 Araraquara, São Paulo (Brazil); Rocha, L.S.R. [Universidade Estadual Paulista, Unesp —Faculdade de Engenharia de Guaratinguetá, Av. Dr Ariberto Pereira da Cunha 333, Bairro Pedregulho, P.O. Box 355, 12.516-410 Guaratinguetá, São Paulo, Brazil, (Brazil); and others

    2015-10-15

    Highlights: • CeO{sub 2} nanoparticles were obtained by microwave-hydrothermal method. • Rietveld refinement reveals a cubic structure. • KOH mineralizer agent exhibit weak agglomeration at low temperature and shorter time. - Abstract: The structural and photoluminescent properties at room temperature of CeO{sub 2} and La-doped CeO{sub 2} particles were undertaken. The obtained particles were synthesized by a microwave-assisted hydrothermal method (MAH) under different lanthanum contents. X-ray diffraction (XRD), Fourier transform infrared (FT-IR), Fourier transform Raman (FT-Raman), Ultra-violet spectroscopy (UV–vis) and photoluminescence (PL) measurements were carried out. XRD revealed that the powders are free of secondary phases and crystallize in the cubic structure. Raman data show that increasing La doping content increase oxygen vacancies due to lattice expansion. The UV/vis absorption spectroscopy suggested the presence of intermediate energy levels in the band gap of structurally ordered powders. Lanthanum addition creates oxygen vacancies and shifts the photoluminescence in the low energy range leading to intense PL emission.

  4. Photoluminescence, trap states and thermoluminescence decay ...

    Indian Academy of Sciences (India)

    Administrator

    Photoluminescence, trap states and thermoluminescence decay process study of Ca2MgSi2O7 : Eu. 2+. , Dy. 3+ phosphor. RAVI SHRIVASTAVA*, JAGJEET KAUR, VIKAS DUBEY and BEENA JAYKUMAR. Govt. VYT PG Autonomous College, Durg 491 001, (C.G.) India. MS received 9 July 2013; revised 5 December 2013.

  5. Microwave Assisted Synthesis and Photoluminescence Properties of ...

    Indian Academy of Sciences (India)

    46

    earth doping of ZnS would not lead to sufficiently bright PL materials. As a result, several new ... photoluminescence characteristics of ZnS nanoparticles doped with Pb2+. New luminescent ..... Papers, San Francisco, CA, USA, 249. [6] Tanaka ...

  6. Electronic band structure in porous silicon studied by photoluminescence and photoluminescence excitation spectroscopy

    International Nuclear Information System (INIS)

    Lee, Ki-Won; Kim, Young-You

    2004-01-01

    In this research, we used photoluminescence (PL) and photoluminescence excitation (PLE) to visualize the electronic band structure in porous silicon (PS). From the combined results of the PLE measurements at various PL emission energies and the PL measurements under excitation at various PLE absorption energies, we infer that three different electronic band structures, originating from different luminescent origins, give rise to the PL spectrum. Through either thermal activation or diffusive transfer, excited carriers are moved to each of the electronic band structures.

  7. Blue photoluminescent carbon nanodots from limeade

    Energy Technology Data Exchange (ETDEWEB)

    Suvarnaphaet, Phitsini [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Tiwary, Chandra Sekhar [Department of Materials Science and Nano Engineering, Rice University, Houston, TX 7005 (United States); Wetcharungsri, Jutaphet; Porntheeraphat, Supanit [NECTEC, National Science and Technology Development Agency (NSTDA), Thailand Science Park, Pathumthani 12120 (Thailand); Hoonsawat, Rassmidara [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Ajayan, Pulickel Madhavapanicker [Department of Materials Science and Nano Engineering, Rice University, Houston, TX 7005 (United States); Tang, I-Ming [Department of Physics, Faculty of Science, Mahidol University, Bangkok 10400 (Thailand); Department of Material Science, Faculty of Science, Kasetsart University, Bangkok 10400 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand); Asanithi, Piyapong, E-mail: asanithi@hotmail.com [Department of Physics, Faculty of Science, King Mongkut' s University of Technology Thonburi, Bangkok 10140 (Thailand); ThEP Center, Commission of Higher Education, 328 Si Ayuthaya Rd (Thailand)

    2016-12-01

    Carbon-based photoluminescent nanodot has currently been one of the promising materials for various applications. The remaining challenges are the carbon sources and the simple synthetic processes that enhance the quantum yield, photostability and biocompatibility of the nanodots. In this work, the synthesis of blue photoluminescent carbon nanodots from limeade via a single-step hydrothermal carbonization process is presented. Lime carbon nanodot (L-CnD), whose the quantum yield exceeding 50% for the 490 nm emission in gram-scale amounts, has the structure of graphene core functionalized with the oxygen functional groups. The micron-sized flake of the as-prepared L-CnD powder exhibits multicolor emission depending on an excitation wavelength. The L-CnDs are demonstrated for rapidly ferric-ion (Fe{sup 3+}) detection in water compared to Fe{sup 2+}, Cu{sup 2+}, Co{sup 2+}, Zn{sup 2+}, Mn{sup 2+} and Ni{sup 2+} ions. The photoluminescence quenching of L-CnD solution under UV light is used to distinguish the Fe{sup 3+} ions from others by naked eyes as low concentration as 100 μM. Additionally, L-CnDs provide exceptional photostability and biocompatibility for imaging yeast cell morphology. Changes in morphology of living yeast cells, i.e. cell shape variation, and budding, can be observed in a minute-period until more than an hour without the photoluminescent intensity loss. - Highlights: • Photoluminescent carbon nanodots are synthesized from limeade. • The quantum yield of lime carbon nanodots is higher than 50%. • The lime carbon nanodots can be applied for detecting of Fe{sup 3+} ions and for imaging living yeast cells.

  8. High power AlGaN ultraviolet light emitters

    International Nuclear Information System (INIS)

    Shatalov, Max; Sun, Wenhong; Jain, Rakesh; Lunev, Alex; Hu, Xuhong; Dobrinsky, Alex; Bilenko, Yuri; Yang, Jinwei; Gaska, Remis; Garrett, Gregory A; Rodak, Lee E; Wraback, Michael; Shur, Michael

    2014-01-01

    We present the analysis of the external quantum efficiency in AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) on sapphire substrates and discuss factors affecting the output power of DUV LEDs. Performance of the LED is related to optimization of the device structure design and improvements of the epitaxial material quality. (invited article)

  9. High power AlGaN ultraviolet light emitters

    Science.gov (United States)

    Shatalov, Max; Sun, Wenhong; Jain, Rakesh; Lunev, Alex; Hu, Xuhong; Dobrinsky, Alex; Bilenko, Yuri; Yang, Jinwei; Garrett, Gregory A.; Rodak, Lee E.; Wraback, Michael; Shur, Michael; Gaska, Remis

    2014-06-01

    We present the analysis of the external quantum efficiency in AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) on sapphire substrates and discuss factors affecting the output power of DUV LEDs. Performance of the LED is related to optimization of the device structure design and improvements of the epitaxial material quality.

  10. Photoluminescent properties of ZnS nanoparticles prepared by electro-explosion of Zn wires

    International Nuclear Information System (INIS)

    Goswami, Navendu; Sen, P.

    2007-01-01

    We study the photoluminescent properties of ZnS nanoparticles without the influence of dopants or magnetic impurities. The ZnS nanoparticles reported in this case were synthesized by a novel method of electro-explosion of wire (EEW). The nanoparticles were prepared employing electro-explosion of pure zinc wires in a cell filled with sulfide ions to produce a free-standing compound ZnS semiconductor. To investigate the structural and optical properties, these nanoparticles were characterized by X-ray powder diffraction (XRD), atomic force microscopy (AFM), UV-visible and photoluminescence (PL) spectroscopy. Consistent with the enhancement of the PL intensity of the 443 nm peak due to deep blue emission of ZnS particles, the XRD of the nanoparticles reveals a hexagonal phase of ZnS nanocrystallites prepared by our novel synthesis technique

  11. Electrochemically grafted polypyrrole changes photoluminescence of electronic states inside nanocrystalline diamond

    Energy Technology Data Exchange (ETDEWEB)

    Galář, P., E-mail: pavel.galar@mff.cuni.cz; Malý, P. [Faculty of Mathematics and Physics, Charles University in Prague, Ke Karlovu 3, Prague 121 16 (Czech Republic); Čermák, J.; Kromka, A.; Rezek, B. [Institute of Physics ASCR v.v.i., Cukrovarnická 10, Prague 160 00 (Czech Republic)

    2014-12-14

    Hybrid diamond-organic interfaces are considered attractive for diverse applications ranging from electronics and energy conversion to medicine. Here we use time-resolved and time-integrated photoluminescence spectroscopy in visible spectral range (380–700 nm) to study electronic processes in H-terminated nanocrystalline diamond films (NCD) with 150 nm thin, electrochemically deposited polypyrrole (PPy) layer. We observe changes in dynamics of NCD photoluminescence as well as in its time-integrated spectra after polymer deposition. The effect is reversible. We propose a model where the PPy layer on the NCD surface promotes spatial separation of photo-generated charge carriers both in non-diamond carbon phase and in bulk diamond. By comparing different NCD thicknesses we show that the effect goes as much as 200 nm deep inside the NCD film.

  12. Photoluminescence of Turkish purple jade (turkiyenite)

    International Nuclear Information System (INIS)

    Hatipoğlu, Murat; Başevirgen, Yasemin

    2012-01-01

    The purple-colored unique gem material is only found in the Harmancık (Bursa) region of the western Anatolia (Turkey). Therefore, it is specially called “Turkish purple jade or turkiyenite” on the worldwide gem market. Even though its jadeite implication is the principal constituent, the material cannot be considered as a single jadeite mineral since other implications are quartz, orthoclase, epidote, chloritoid and phlogopite minerals. Even if the analytical methods are used to characterize and identify the Turkish purple jade samples in detail, the luminescence spectra, especially photoluminescence features regarding to composite mineral implications of the material are important because of the existence the numerous characteristic broad and intensive luminescence bands in the samples. We can state that the UV-irradiation luminescence centers as photoluminescence (PL) are due to the overall signals in the Turkish purple jade samples. Accordingly, the distinctive photoluminescence peaks at 743, 717, 698, 484, 465 and 442 nm in PL-2D (counter diagram and sections) and PL-3D (sequence spectra) ranging between 300 and 900 nm of wavelengths, and between 220 and 340 K of temperatures are observed. Finally, photoluminescence features of the heterogeneous-structured material cannot be simply attributed to any chemical impurities, since the jade mass has numerous heterogeneous mineral constituents instead of a single jadeite mineral. Six different mineral implications and chemical impurities in the material composition display complex and individual all kind of luminescence features. Therefore, photoluminescence as well as radioluminescence, cathodoluminescence and thermoluminescence spectra provide positive identification regarding to the provenance (geographic origin) of the original Turkish purple jade (turkiyenite). - Highlights: ► The purple-colored gem material is only found in the Harmancık-Bursa region of Turkey. ► Material is called “Turkish purple

  13. Ultraviolet radiation and immunosuppression.

    LENUS (Irish Health Repository)

    Murphy, G M

    2009-11-01

    Ultraviolet (UV) radiation is a complete carcinogen. The effects of UV radiation are mediated via direct damage to cellular DNA in the skin and suppression of image surveillance mechanisms. In the context of organ transplantation, addiction of drugs which suppress the immune system add greatly to the carcinogenicity of UV radiation. This review considers the mechanisms of such effects.

  14. Stellar extreme ultraviolet astronomy

    International Nuclear Information System (INIS)

    Cash, W.C. Jr.

    1978-01-01

    The design, calibration, and launch of a rocket-borne imaging telescope for extreme ultraviolet astronomy are described. The telescope, which employed diamond-turned grazing incidence optics and a ranicon detector, was launched November 19, 1976, from the White Sands Missile Range. The telescope performed well and returned data on several potential stellar sources of extreme ultraviolet radiation. Upper limits ten to twenty times more sensitive than previously available were obtained for the extreme ultraviolet flux from the white dwarf Sirius B. These limits fall a factor of seven below the flux predicted for the star and demonstrate that the temperature of Sirius B is not 32,000 K as previously measured, but is below 30,000 K. The new upper limits also rule out the photosphere of the white dwarf as the source of the recently reported soft x-rays from Sirius. Two other white dwarf stars, Feige 24 and G191-B2B, were observed. Upper limits on the flux at 300 A were interpreted as lower limits on the interstellar hydrogen column densities to these stars. The lower limits indicate interstellar hydrogen densitites of greater than .02 cm -3 . Four nearby stars (Sirius, Procyon, Capella, and Mirzam) were observed in a search for intense low temperature coronae or extended chromospheres. No extreme ultraviolet radiation from these stars was detected, and upper limits to their coronal emisson measures are derived

  15. Ultraviolet fire detector

    Science.gov (United States)

    Turnage, J. E.; Linford, R. M. F.; Cornish, S. D.

    1976-01-01

    System is capable of detecting ultraviolet light emitted by match size flame at distance of 10 ft. System is not affected by high energy or particulate radiation and is therefore particularly suited for applications around nuclear plants and X-ray equipment.

  16. Psoriasis and ultraviolet radiation

    International Nuclear Information System (INIS)

    Farber, E.M.; Nall, L.

    1993-01-01

    Prevention and detection screening programs as a public health service in curtailing the ever-increasing incidence of all forms of skin cancer are reviewed. The effect of solar and artificial ultraviolet radiation on the general population and persons with psoriasis is examined. 54 refs

  17. Combined experimental and theoretical investigations of the photoluminescent behavior of Ba(Ti, Zr)O3 thin films

    International Nuclear Information System (INIS)

    Cavalcante, L.S.; Gurgel, M.F.C.; Paris, E.C.; Simoes, A.Z.; Joya, M.R.; Varela, J.A.; Pizani, P.S.; Longo, E.

    2007-01-01

    The correlation between experimental data and theoretical calculations have been investigated to explain the photoluminescence at room temperature of Ba(Ti 0.75 Zr 0.25 )O 3 (BTZ) thin films prepared by the polymeric precursor method. The degree of structural order-disorder was investigated by X-ray diffraction, Fourier transform infrared spectroscopy, ultraviolet-visible absorption spectroscopy and photoluminescence (PL) measurements. First-principles quantum mechanical calculations based on density functional theory (B3LYP level) were employed to study the electronic structure of ordered and deformed asymmetric models. The electronic properties are analyzed and the relevance of the present theoretical and experimental results on the PL behavior is discussed. The presence of localized electronic levels and a charge gradient in the band gap due to a break in symmetry, are responsible for the PL in disordered BTZ lattice

  18. Preparation and Photoluminescence of Tungsten Disulfide Monolayer

    Directory of Open Access Journals (Sweden)

    Yanfei Lv

    2018-05-01

    Full Text Available Tungsten disulfide (WS2 monolayer is a direct band gap semiconductor. The growth of WS2 monolayer hinders the progress of its investigation. In this paper, we prepared the WS2 monolayer through chemical vapor transport deposition. This method makes it easier for the growth of WS2 monolayer through the heterogeneous nucleation-and-growth process. The crystal defects introduced by the heterogeneous nucleation could promote the photoluminescence (PL emission. We observed the strong photoluminescence emission in the WS2 monolayer, as well as thermal quenching, and the PL energy redshift as the temperature increases. We attribute the thermal quenching to the energy or charge transfer of the excitons. The redshift is related to the dipole moment of WS2.

  19. Photoluminescence lineshape of ZnO

    Directory of Open Access Journals (Sweden)

    Bruno Ullrich

    2014-12-01

    Full Text Available The merger of the absorption coefficient dispersion, retrieved from transmission by the modified Urbach rule introduced by Ullrich and Bouchenaki [Jpn. J. Appl. Phys. 30, L1285, 1991], with the extended Roosbroeck-Shockley relation reveals that the optical absorption in ZnO distinctively determines the photoluminescence lineshape. Additionally, the ab initio principles employed enable the accurate determination of the carrier lifetime without further specific probing techniques.

  20. Modification of the optoelectronic properties of two-dimensional MoS2 crystals by ultraviolet-ozone treatment

    Science.gov (United States)

    Yang, Hae In; Park, Seonyoung; Choi, Woong

    2018-06-01

    We report the modification of the optoelectronic properties of mechanically-exfoliated single layer MoS2 by ultraviolet-ozone exposure. Photoluminescence emission of pristine MoS2 monotonically decreased and eventually quenched as ultraviolet-ozone exposure time increased from 0 to 10 min. The reduction of photoluminescence emission accompanied reduction of Raman modes, suggesting structural degradation in ultraviolet-ozone exposed MoS2. Analysis with X-ray photoelectron spectroscopy revealed that the formation of Ssbnd O and Mosbnd O bonding increases with ultraviolet-ozone exposure time. Measurement of electrical transport properties of MoS2 in a bottom-gate thin-film transistor configuration suggested the presence of insulating MoO3 after ultraviolet-ozone exposure. These results demonstrate that ultraviolet-ozone exposure can significantly influence the optoelectronic properties of single layer MoS2, providing important implications on the application of MoS2 and other two-dimensional materials into optoelectronic devices.

  1. Photoluminescence of ZnO thin films deposited at various substrate temperatures

    International Nuclear Information System (INIS)

    Kao, Kuo-Sheng; Shih, Wei-Che; Ye, Wei-Tsuen; Cheng, Da-Long

    2016-01-01

    This study investigated surface acoustic wave devices with an Al/ZnO/Si structure for use in ultraviolet sensors. ZnO thin films were fabricated using a reactive radio frequency magnetron sputtering system. The substrate temperature of ZnO thin films can be varied to obtain highly crystalline properties. The surface morphologies and c-axis preferred orientation of the ZnO thin films were determined using scanning electron microscopy and X-ray diffraction. In addition, bright-field images of ZnO crystallization were investigated using a transmission electron microscope. From photoluminescence analysis, four peaks were obtained at 377.8, 384.9, 391.4, and 403.4 nm. Interdigital transducers of an aluminum electrode were fabricated on the ZnO/Si structure by using a direct current sputtering system and photolithography, combined with the lift-off method, thereby obtaining a surface acoustic wave device. Finally, frequency responses were measured using a network analyzer, and an illuminating test was adopted for the ultraviolet sensor, using a wavelength of 355 nm from a light-emitting diode. The sensitivities of the ultraviolet sensor were also discussed. - Highlights: • The ZnO/Si SAW devices exhibit the Rayleigh and Sezawa modes. • The crystalline of ZnO affects the EHP recombination and generation. • The PL spectrum of ZnO shows Gaussian fitting distributions. • The CTD_U_V is influenced by SAW types and ZnO film characteristics.

  2. Photoluminescence of ZnO thin films deposited at various substrate temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Kao, Kuo-Sheng [Department of Computer and Communication, SHU-TE University, Kaohsiung, Taiwan (China); Shih, Wei-Che [Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Ye, Wei-Tsuen [Department of Computer and Communication, SHU-TE University, Kaohsiung, Taiwan (China); Cheng, Da-Long, E-mail: dlcheng@stu.edu.tw [Department of Computer and Communication, SHU-TE University, Kaohsiung, Taiwan (China)

    2016-04-30

    This study investigated surface acoustic wave devices with an Al/ZnO/Si structure for use in ultraviolet sensors. ZnO thin films were fabricated using a reactive radio frequency magnetron sputtering system. The substrate temperature of ZnO thin films can be varied to obtain highly crystalline properties. The surface morphologies and c-axis preferred orientation of the ZnO thin films were determined using scanning electron microscopy and X-ray diffraction. In addition, bright-field images of ZnO crystallization were investigated using a transmission electron microscope. From photoluminescence analysis, four peaks were obtained at 377.8, 384.9, 391.4, and 403.4 nm. Interdigital transducers of an aluminum electrode were fabricated on the ZnO/Si structure by using a direct current sputtering system and photolithography, combined with the lift-off method, thereby obtaining a surface acoustic wave device. Finally, frequency responses were measured using a network analyzer, and an illuminating test was adopted for the ultraviolet sensor, using a wavelength of 355 nm from a light-emitting diode. The sensitivities of the ultraviolet sensor were also discussed. - Highlights: • The ZnO/Si SAW devices exhibit the Rayleigh and Sezawa modes. • The crystalline of ZnO affects the EHP recombination and generation. • The PL spectrum of ZnO shows Gaussian fitting distributions. • The CTD{sub UV} is influenced by SAW types and ZnO film characteristics.

  3. Beryllium-free β-Rb{sub 2}Al{sub 2}B{sub 2}O{sub 7} as a possible deep-ultraviolet nonlinear optical material replacement for KBe{sub 2}BO{sub 3}F{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Tran, T. Thao; Halasyamani, P. Shiv [Department of Chemistry, University of Houston, TX (United States); Koocher, Nathan Z.; Rondinelli, James M. [Department of Materials Science and Engineering, Northwestern University, Evanston, IL (United States)

    2017-03-06

    A new beryllium-free deep-ultraviolet (DUV) nonlinear optical (NLO) material, β-Rb{sub 2}Al{sub 2}B{sub 2}O{sub 7} (β-RABO), has been synthesized and characterized. The chiral nonpolar acentric material shows second-harmonic generation (SHG) activity at both 1064 and 532 nm with efficiencies of 2 x KH{sub 2}PO{sub 4} and 0.4 x β-BaB{sub 2}O{sub 4}, respectively, and exhibits a short absorption edge below 200 nm. β-Rb{sub 2}Al{sub 2}B{sub 2}O{sub 7} has a three-dimensional structure of corner-shared Al(BO{sub 3}){sub 3}O polyhedra. The discovery of β-RABO shows that through careful synthesis and characterization, replacement of KBe{sub 2}BO{sub 3}F{sub 2} (KBBF) by a Be-free DUV NLO material is possible. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

    Science.gov (United States)

    Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Li, Luping; Bi, Wengang; Zhang, Zi-Hui

    2018-01-01

    This work proposes the [0001] oriented AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) possessing a specifically designed p-electron blocking layer (p-EBL) to achieve the high internal quantum efficiency. Both electrons and holes can be efficiently injected into the active region by adopting the Al0.60Ga0.40N/Al0.50Ga0.50N/Al0.60Ga0.40N structured p-EBL, in which a p-Al0.50Ga0.50N layer is embedded into the p-EBL. Moreover, the impact of different thicknesses for the p-Al0.50Ga0.50N insertion layer on the hole and electron injections has also been investigated. Compared with the DUV LED with the bulk p-Al0.60Ga0.40N as the EBL, the proposed LED architectures improve the light output power if the thickness of the p-Al0.50Ga0.50N insertion layer is properly designed.

  5. Ultraviolet photoluminescence and Raman scattering of wide bandgap semiconductors and nanocrystallites

    Science.gov (United States)

    Chen, Xiang-Bai

    In the sports psychology literature, goal setting intervention studies have been a popular area of research the last ten years (Burton, 2001). Previous research demonstrates that goal setting is the most consistent and effective performance enhancement strategy in the behavioral sciences and seems to have a positive impact on performance (Burton et al., 2003; Locke & Latham, 1990). A "roadmap" detailing how to implement a periodized goal-setting program was developed, and its effectiveness was assessed using a quasi-experimental, multiple baseline case study design. Participants were six female members of a collegiate tennis team in the Northwest who ranged in age between 18--22 years. Several instruments were used to assess the effectiveness of the goal setting intervention, including: the Sports Motivation Scale (SMS), Task and Ego Orientation Sports Questionnaire (TEOSQ), Theories of Talent Scale (TOTS), Athletic Coping Skills Inventory (ACSI-28), Trait Sport Confidence Inventory (TSCI), and the Multidimensional Perfectionism Scale (MPS). All of these instruments have been documented to possess solid psychometric properties. Goal term length was periodized into three duration increments, including: long-term (macro), short-term (micro), and intermediate-term (meso) goals. Intervention effectiveness was assessed using both quantitative and qualitative analysis to assess self-confidence and performance. A review of qualitative data provided the strongest support for the generally large positive impact of goal-setting on athletes' self-confidence and performance. Every athlete reported that goal-setting was extremely helpful for increasing their understanding of the game, becoming more motivated to practice and compete, enhancing their self-confidence, focus and concentration, and boosting their performance. Overall, these results point out the effectiveness of goal-setting as a strategy to increase self-confidence and enhance performance, but they suggest that effective goal-setting programs nurture the process by spending significant individual time teaching athletes to set and adjust goals. (Abstract shortened by UMI.)

  6. Red photoluminescence and band edge shift from ZnO thin films

    International Nuclear Information System (INIS)

    Marotti, Ricardo E.; Badan, Juan A.; Quagliata, Eduardo; Dalchiele, Enrique A.

    2007-01-01

    The red photoluminescence (PL) band (peaked between 610 and 640 nm) from electrochemically deposited ZnO thin films is studied. The absorption coefficient is obtained from diffuse reflectance measurements. The absorption band edge depends on deposition conditions. The PL peak follows the shift of the band edge. A similar correlation appears when cooling down to 20 K. This suggests that PL is due to a transition from an intrinsic shallow state to an intrinsic deep state. Comparing against ZnO samples showing green PL, the shallow nature of the state is confirmed

  7. Photoluminescence due to early stage of oxygen precipitation in multicrystalline Si for solar cells

    Science.gov (United States)

    Higuchi, Fumito; Tajima, Michio; Ogura, Atsushi

    2017-07-01

    To analyze the early stage of oxygen precipitation in n-type multicrytalline Si, the spectral change of photoluminescence (PL) induced by thermal treatment at 450-650 °C was investigated in relation to the changes in excess donor and interstitial oxygen concentrations. We observed the characteristic PL bands in the near-band-edge region and sharp lines in the deep-level region in correspondence with the generation of thermal donors and new donors. The observed PL spectral variation is essentially the same as that in Czochralski-grown Si annealed at 450-650 °C.

  8. Origin of photoluminescence in β -G a2O3

    Science.gov (United States)

    Ho, Quoc Duy; Frauenheim, Thomas; Deák, Peter

    2018-03-01

    β -G a2O3 , a candidate material for power electronics and UV optoelectronics, shows strong room-temperature photoluminescence (PL). In addition to the three well-known bands of as-grown samples in the UV, blue, and green, also red PL was observed upon nitrogen doping. This raises the possibility of applying β -G a2O3 nanostructures as white phosphors. Using an optimized, Koopmans-compliant hybrid functional, we show that most intrinsic point defects, as well as substitutional nitrogen, act as deep acceptors, and each of the observed PL bands can be explained by electron recombination with a hole trapped in one of them. We suggest this mechanism to be general in wide-band-gap semiconductors which can only be doped n -type. Calculations on the nitrogen acceptor reproduce the observed red luminescence accurately. Earlier we have shown that not only the energy, but the polarization properties of the UV band can be explained by self-trapped hole states. Here we find that the blue band has its origin mainly in singly negative Ga-O divacancies, and the green band is caused dominantly by interstitial O atoms (with minor contribution of Ga vacancies to both). These assignments can explain the experimentally observed dependence of the PL bands on free-electron concentration and stoichiometry. The information provided here paves the way for the conscious tuning of light emission from β -G a2O3 .

  9. Hole transport and photoluminescence in Mg-doped InN

    Energy Technology Data Exchange (ETDEWEB)

    Miller, N.; Ager III, J. W.; Smith III, H. M.; Mayer, M. A.; Yu, K. M.; Haller, E. E.; Walukiewicz, W.; Schaff, W. J.; Gallinat, C.; Koblmuller, G.; Speck, J. S.

    2010-03-24

    Hole conductivity and photoluminescence were studied in Mg-doped InN films grown by molecular beam epitaxy. Because surface electron accumulation interferes with carrier type determination by electrical measurements, the nature of the majority carriers in the bulk of the films was determined using thermopower measurements. Mg concentrations in a"window" from ca. 3 x 1017 to 1 x 1019 cm-3 produce hole-conducting, p-type films as evidenced by a positive Seebeck coecient. This conclusion is supported by electrolyte-based capacitance voltage measurements and by changes in the overall mobility observed by Hall effect, both of which are consistent with a change from surface accumulation on an n-type film to surface inversion on a p-type film. The observed Seebeck coefficients are understood in terms of a parallel conduction model with contributions from surface and bulk regions. In partially compensated films with Mg concentrations below the window region, two peaks are observed in photoluminescence at 672 meV and at 603 meV. They are attributed to band-to-band and band-to-acceptor transitions, respectively, and an acceptor binding energy of ~;;70 meV is deduced. In hole-conducting films with Mg concentrations in the window region, no photoluminescence is observed; this is attributed to electron trapping by deep states which are empty for Fermi levels close to the valence band edge.

  10. Photoluminescence of Er in SiOx

    International Nuclear Information System (INIS)

    Wan Jun; Sheng Chi; Lu Fang; Gong Dawei; Fan Yongliang; Lin Feng; Wang Xun

    1998-01-01

    Erbium-doped SiO x is prepared by molecular beam epitaxy. The influence of Er on the incorporation of O is studied by using Auger spectroscopy. Photoluminescence (PL) peaks around the wave-length of 1.53 μm have been observed within the temperature range of 18 to 300 K after annealing. The relationship between PL intensity and annealing temperature is discussed. The temperature dependence of the PL intensity shows an exponential decay with an activation energy of 12 meV at low temperatures ( 100 K)

  11. Photoluminescence study in diaminobenzene functionalized graphene oxide

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Abhisek, E-mail: guptaabhisek017@gmail.com, E-mail: cnssks@iacs.res.in; Saha, Shyamal K., E-mail: guptaabhisek017@gmail.com, E-mail: cnssks@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

    2014-10-15

    Being an excellent electronic material graphene is a very poor candidate for optoelectronic applications. One of the major strategies to develop the optical property in GO is the functionalization of graphene oxide (GO). In the present work GO sheets are functionalized by o-phenylenediamine to achieve diaminobenzene functionalized GO composite (DAB-GO). Formation of DAB-GO composite is further characterized by FTIR, UV, Raman studies. Excellent photoluminescence is observed in DAB-GO composite via passivation of the surface reactive sites by ring-opening amination of epoxides of GO.

  12. Gold Photoluminescence: Wavelength and Polarization Engineering

    DEFF Research Database (Denmark)

    Andersen, Sebastian Kim Hjælm; Pors, Anders Lambertus; Bozhevolnyi, Sergey I.

    2015-01-01

    We demonstrate engineering of the spectral content and polarization of photoluminescence (PL) from arrayed gold nanoparticles atop a subwavelength-thin dielectric spacer and optically-thick gold film, a configuration that supports gap-surface plasmon resonances (GSPRs). Choice of shapes...... and dimensions of gold nanoparticles influences the GSPR wavelength and polarization characteristics, thereby allowing us to enhance and spectrally mold the plasmon-assisted PL while simultaneously controlling its polarization. In order to understand the underlying physics behind the plasmon-enhanced PL, we...

  13. FAINT NEAR-ULTRAVIOLET/FAR-ULTRAVIOLET STANDARDS FROM SWIFT/UVOT, GALEX, AND SDSS PHOTOMETRY

    International Nuclear Information System (INIS)

    Siegel, Michael H.; Hoversten, Erik A.; Roming, Peter W. A.; Brown, Peter

    2010-01-01

    At present, the precision of deep ultraviolet photometry is somewhat limited by the dearth of faint ultraviolet standard stars. In an effort to improve this situation, we present a uniform catalog of 11 new faint (u ∼ 17) ultraviolet standard stars. High-precision photometry of these stars has been taken from the Sloan Digital Sky Survey and Galaxy Evolution Explorer archives and combined with new data from the Swift Ultraviolet Optical Telescope to provide precise photometric measures extending from the near-infrared to the far-ultraviolet. These stars were chosen because they are known to be hot (20, 000 eff < 50, 000 K) DA white dwarfs with published Sloan spectra that should be photometrically stable. This careful selection allows us to compare the combined photometry and Sloan spectroscopy to models of pure hydrogen atmospheres to both constrain the underlying properties of the white dwarfs and test the ability of white dwarf models to predict the photometric measures. We find that the photometry provides good constraints on white dwarf temperatures, which demonstrates the ability of Swift/UVOT to investigate the properties of hot luminous stars. We further find that the models reproduce the photometric measures in all 11 passbands to within their systematic uncertainties. Within the limits of our photometry, we find the standard stars to be photometrically stable. This success indicates that the models can be used to calibrate additional filters to our standard system, permitting easier comparison of photometry from heterogeneous sources. The largest source of uncertainty in the model fitting is the uncertainty in the foreground reddening curve, a problem that is especially acute in the UV.

  14. On the phenomenon of large photoluminescence red shift in GaN nanoparticles

    KAUST Repository

    Ben Slimane, Ahmed

    2013-07-01

    We report on the observation of broad photoluminescence wavelength tunability from n-type gallium nitride nanoparticles (GaN NPs) fabricated using the ultraviolet metal-assisted electroless etching method. Transmission and scanning electron microscopy measurements performed on the nanoparticles revealed large size dispersion ranging from 10 to 100 nm. Nanoparticles with broad tunable emission wavelength from 362 to 440 nm have been achieved by exciting the samples using the excitation power-dependent method. We attribute this large wavelength tunability to the localized potential fluctuations present within the GaN matrix and to vacancy-related surface states. Our results show that GaN NPs fabricated using this technique are promising for tunable-color-temperature white light-emitting diode applications. © 2013 Slimane et al.; licensee Springer.

  15. Photoluminescence from ZnO-SiO2 opals with different sphere diameters and thicknesses

    International Nuclear Information System (INIS)

    Yang Yingling; Yan Hongwei; Fu Zhengping; Yang Beifang; Xia Linsheng; Wang Zhen; Zuo Jian; Yu Shijun; Fu Shengquan; Li Fanqing

    2007-01-01

    We systematically investigated the photoluminescence (PL) and transmittance characteristics of ZnO-SiO 2 opals with varied positions of the stop-band and film thicknesses. An improved ultraviolet (UV) luminescence was observed from ZnO-SiO 2 composites over pure ZnO nanocrystals under 325 nm He-Cd laser excitation at room temperature. The UV PL of ZnO nanocrystals in SiO 2 opals with stop-bands center of 410 nm is sensitive to the thickness of opal films, and the UV PL intensity increases with the film thickness increasing. The PL spectra of ZnO nanocrystals in SiO 2 opals with stop-bands center of 570 nm show a suppression of the weak visible band. The experimental results are discussed based on the scattering and/or absorbance in opal crystals

  16. Quenching of the surface-state-related photoluminescence in Ni-coated ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Tang Yang [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Zhao Dongxu, E-mail: dxzhao2000@yahoo.com.c [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Zhang Jiying; Shen Dezhen [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)

    2010-11-01

    Nickel-coated ZnO nanowires (NWs) were fabricated by electrodepositing Ni particles on ZnO NW arrays. The morphological, magnetic, and photoluminescent properties of the Ni-coated ZnO NWs were investigated. The Ni particles were deposited on the ZnO NWs' surface along its length to form a Ni/ZnO shell-core structure. The Ni-coated ZnO NWs exhibited more isotropic characteristic than the electrodeposited Ni films owing to the isotropic sphere structure of the Ni particles. A strong ultraviolet emission can be obtained from the Ni-coated ZnO NWs, while the green emission related to surface states was quenched by the passivated layer.

  17. Quenching of the surface-state-related photoluminescence in Ni-coated ZnO nanowires

    International Nuclear Information System (INIS)

    Tang Yang; Zhao Dongxu; Zhang Jiying; Shen Dezhen

    2010-01-01

    Nickel-coated ZnO nanowires (NWs) were fabricated by electrodepositing Ni particles on ZnO NW arrays. The morphological, magnetic, and photoluminescent properties of the Ni-coated ZnO NWs were investigated. The Ni particles were deposited on the ZnO NWs' surface along its length to form a Ni/ZnO shell-core structure. The Ni-coated ZnO NWs exhibited more isotropic characteristic than the electrodeposited Ni films owing to the isotropic sphere structure of the Ni particles. A strong ultraviolet emission can be obtained from the Ni-coated ZnO NWs, while the green emission related to surface states was quenched by the passivated layer.

  18. On the phenomenon of large photoluminescence red shift in GaN nanoparticles

    KAUST Repository

    Ben Slimane, Ahmed; Anjum, Dalaver H.; Elafandy, Rami T.; Najar, Adel; Ng, Tien Khee; San Roman Alerigi, Damian; Ooi, Boon S.

    2013-01-01

    We report on the observation of broad photoluminescence wavelength tunability from n-type gallium nitride nanoparticles (GaN NPs) fabricated using the ultraviolet metal-assisted electroless etching method. Transmission and scanning electron microscopy measurements performed on the nanoparticles revealed large size dispersion ranging from 10 to 100 nm. Nanoparticles with broad tunable emission wavelength from 362 to 440 nm have been achieved by exciting the samples using the excitation power-dependent method. We attribute this large wavelength tunability to the localized potential fluctuations present within the GaN matrix and to vacancy-related surface states. Our results show that GaN NPs fabricated using this technique are promising for tunable-color-temperature white light-emitting diode applications. © 2013 Slimane et al.; licensee Springer.

  19. Structure and photoluminescence of Mn-passivated nanocrystalline ZnO:S thin films

    International Nuclear Information System (INIS)

    Tong, Y.H.; Tang, Q.X.; Liu, Y.C.; Shao, C.L.; Xu, C.S.; Liu, Y.X.

    2005-01-01

    Mn-passivated nanocrystalline ZnO:S thin films were fabricated by thermally oxidizing Mn-doped ZnS (ZnS:Mn) films prepared by electron beam evaporation. Mn was introduced to passivate the surface defects of ZnO and to improve the optical properties. X-ray diffraction (XRD) and photoluminescence (PL) spectra at 81.9 K indicated the S content in ZnO thin film gradually decreased with increasing annealing temperature. The fitted result of the temperature-dependent PL spectra in the range from 81.9 to 302.2 K showed that S dopant could broaden the optical band gap energy of ZnO. Room temperature PL spectra confirmed that the ultraviolet peak shifted to lower energy with the decrease of S content in the thin film because of the Burstein-Moss effect

  20. Study of photoluminescence from annealed bulk-ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yoneta, M.; Ohishi, M.; Saito, H. [Department of Applied Physics, Okayama University of Science, 1-1 Ridai-cho, Okayama 700-0005 (Japan); Yoshino, K. [Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192 (Japan); Honda, M. [Faculty of Science, Naruto University of Education, 748 Nakajima, Takashima, Naruto-cho, Naruto-shi 772-8502 (Japan)

    2006-03-15

    We have investigated the influence of rapid thermal annealing on the photoluminescence of bulk-ZnO single crystal. As-grown ZnO wafer, illuminated by 325 nm ultraviolet light at 4.2 K, emitted the visible luminescence of pale green centered of 2.29 eV. The luminescence was observed by the anneal at the temperature range between 400 C and 1000 C, however, its intensity decreased with anneal temperature. The free-exciton and the 2.18 eV emission line were obtained by the anneal at 1200 C for 60 sec. From the X-ray diffraction and the surface morphology measurements, the improvement of the crystallinity of bulk-ZnO crystal were confirmed. We suggest that a rapid thermal annealing technique is convenience to improve the the quality of bul-ZnO single crystals. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. N-butylamine functionalized graphene oxide for detection of iron(III) by photoluminescence quenching.

    Science.gov (United States)

    Gholami, Javad; Manteghian, Mehrdad; Badiei, Alireza; Ueda, Hiroshi; Javanbakht, Mehran

    2016-02-01

    An N-butylamine functionalized graphene oxide nanolayer was synthesized and characterized by ultraviolet (UV)-visible spectrometry, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. Detection of iron(III) based on photoluminescence spectroscopy was investigated. The N-butylamine functionalized graphene oxide was shown to specifically interact with iron (III), compared with other cationic trace elements including potassium (I), sodium (I), calcium (II), chromium (III), zinc (II), cobalt (II), copper (II), magnesium (II), manganese (II), and molybdenum (VI). The quenching effect of iron (III) on the luminescence emission of N-butylamine functionalized graphene oxide layer was used to detect iron (III). The limit of detection (2.8 × 10(-6)  M) and limit of quantitation (2.9 × 10(-5)  M) were obtained under optimal conditions. Copyright © 2015 John Wiley & Sons, Ltd.

  2. Occupational applications of ultraviolet radiation

    International Nuclear Information System (INIS)

    Eriksen, P.

    1987-01-01

    A large population of workers are exposed to ultraviolet radiation in various occupational environments which often necessitates protection. Since ultraviolet radiation may create other environmental problems an occupational hazard- and protection evaluation can be complicated. Threshold Limit Values adopted by the American Conference of Governmental Industrial Hygienists (ACGIH) on ultraviolet radiation are used in most countries as guidelines for risk assessment and control measures. This review addresses the levels of ultraviolet radiation met in occupational environments, its measurement and evaluation, and discusses different protection methods. Ultraviolet lasers are beginning to find their way into industrial processes but are still limited in number and they will not be covered here. Emphasis is on broad band incoherent radiation in high risk environments such as welding, and on the evaluation of protective eyewear, see-through curtains and plastics. Other occupational risks associated with the emission of ultraviolet radiation are discussed

  3. New organically templated photoluminescence iodocuprates(I)

    International Nuclear Information System (INIS)

    Hou Qin; Zhao Jinjing; Zhao Tianqi; Jin Juan; Yu Jiehui; Xu Jiqing

    2011-01-01

    Two types of organic cyclic aliphatic diamine molecules piperazine (pip) and 1,3-bis(4-piperidyl)propane (bpp) were used, respectively, to react with an inorganic mixture of CuI and KI in the acidic CH 3 OH solutions under the solvothermal conditions, generating finally three new organically templated iodocuprates as 2-D layered [(Hpip)Cu 3 I 4 ] 1, 1-D chained [tmpip][Cu 2 I 4 ] 2 (tmpip=N,N,N',N'-tetramethylpiperazinium) and dinuclear [H 2 bpp] 2 [Cu 2 I 5 ] I.2H 2 O 3. Note that the templating agent tmpip 2+ in compound 2 originated from the in situ N-alkylation reaction between the pip molecule and the methanol solvent. The photoluminescence analysis indicates that the title compounds emit the different lights: yellow for 1, blue for 2 and yellow-green for 3, respectively. - Graphical abstract: The solvothermal self-assemblies of CuI, KI and pip/bpp in acidic CH 3 OH solutions created three iodocuprates 2-D layered [(Hpip)Cu 3 I 4 ] 1, 1-D chained [tmpip][Cu 2 I 4 ] 2 and dinuclear [H 2 bpp] 2 [Cu 2 I 5 ] I.2H 2 O 3. Highlights: → A new layered iodocuprate(I) with 20-membered rings was hydrothermally prepared. → A simple approach to prepare the new organic templating agent was reported. → Photoluminescence analysis indicates the emission for iodocuprate(I) is associated with the Cu...Cu interactions.

  4. Transparent ultraviolet photovoltaic cells.

    Science.gov (United States)

    Yang, Xun; Shan, Chong-Xin; Lu, Ying-Jie; Xie, Xiu-Hua; Li, Bing-Hui; Wang, Shuang-Peng; Jiang, Ming-Ming; Shen, De-Zhen

    2016-02-15

    Photovoltaic cells have been fabricated from p-GaN/MgO/n-ZnO structures. The photovoltaic cells are transparent to visible light and can transform ultraviolet irradiation into electrical signals. The efficiency of the photovoltaic cells is 0.025% under simulated AM 1.5 illumination conditions, while it can reach 0.46% under UV illumination. By connecting several such photovoltaic cells in a series, light-emitting devices can be lighting. The photovoltaic cells reported in this Letter may promise the applications in glass of buildings to prevent UV irradiation and produce power for household appliances in the future.

  5. Influence of structural defects on excitonic photoluminescence of pentacene

    International Nuclear Information System (INIS)

    Piryatins'kij, Yu.P.; Kurik, M.V.

    2011-01-01

    The exciton reflection, absorption, and photoluminescence spectra for single crystals and polycrystalline films have been studied in the temperature range of 4.2-296 K. A significant influence of structural defects arising during phase transitions on the exciton spectra of pentacene has been detected. The mechanisms of photoluminescence in single crystals and crystalline films of pentacene have been considered.

  6. Photoluminescence properties of ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth

    International Nuclear Information System (INIS)

    Nishio, Mitsuhiro; Hayashida, Kazuki; Harada, Hiroki; Mitsuishi, Yoshiaki; Guo Qixin; Ogawa, Hiroshi

    2001-01-01

    ZnTe homoepitaxial films have been deposited at substrate temperatures between 27 deg. C and 100 deg. C by synchrotron-radiation-excited growth using diethylzinc and diethyltelluride. Effects of diethylzinc transport rate and substrate temperature upon the photoluminescence properties of the ZnTe films have been clarified. Strong deep level emissions centered at 1.85 and 2.1 eV related to defects such as vacancy-impurity complex become emerged with increasing diethylzinc transport rate or substrate temperature. A sharply excitonic emission at 2.375 eV associated with shallow acceptors is observed and neither a donor-acceptor pair recombination nor a deep level luminescence signal is detected in the spectrum of the film grown under the nearly stoichiometric condition, which indicates that ZnTe films of good quality can be grown even at room temperature by this growth technique

  7. Optimized photoluminescence of SrB 2O 4:Eu 3+ red-emitting phosphor by charge compensation

    Science.gov (United States)

    Zhao, Lai-Shi; Liu, Jie; Wu, Zhan-Chao; Kuang, Shao-Ping

    2012-02-01

    A novel red-emitting phosphor, SrB 2O 4:Eu 3+, was synthesized by high temperature solid-state reaction and its photoluminescence properties were studied. The emission spectrum consists of four major emission bands. The emission peaks are located at 593, 612, 650 and 703 nm, corresponding to the 5D0 → 7F1, 5D0 → 7F2, 5D0 → 7F3 and 5D0 → 7F4 typical transitions of Eu 3+, respectively. The effects of Eu 3+ doping content and charge compensators (Li +, Na +, K +) on photoluminescence of SrB 2O 4:Eu 3+ phosphor were studied. The results show that the emission intensity can be affected by above factors and Na + is the optimal charge compensator for SrB 2O 4:Eu 3+. The photoluminescence of NaSrB 2O 4:Eu 3+ was compared with that of Y 2O 2S:Eu 3+. It implies that SrB 2O 4:Eu 3+ is a good candidate as a red-emitting phosphor pumped by near-ultraviolet (NUV) InGaN chip for fabricating white light-emitting diodes (WLEDs).

  8. Photoluminescence quenching and photocatalytic enhancement of ...

    Indian Academy of Sciences (India)

    24

    The low cost and nontoxic behaviour are the merits of ZnO compounds. ... Because of this high temperature heating process the ... purity and getting structural information. ..... A deep level analysis on the system is required to understand this.

  9. Photoluminescence measurements of ZnO heterostructures

    International Nuclear Information System (INIS)

    Adachi, Yutaka; Sakaguchi, Isao; Ohashi, Naoki; Haneda, Hajime; Ryoken, Haruki; Takenaka, Tadashi

    2003-01-01

    ZnO thin films were grown on TbAlO 3 single crystal substrates by pulsed laser deposition. In photoluminescence (PL) measurements, strong emissions from TbAlO 3 were observed with the emission from ZnO when the film thickness was less than 100 nm. The relationship between the ZnO film thickness and the emission intensity from TbAlO 3 was investigated in order to determine the penetration depth of excitation light. Information on the heterostructures ranging from the surface to a depth of 300 nm was obtained by PL measurements in this study, and the absorption coefficient for a wavelength of 325 nm was estimated to be 1.31x10 5 cm -1 . (author)

  10. Modelling absorption and photoluminescence of TPD

    Energy Technology Data Exchange (ETDEWEB)

    Vragovic, Igor [Dpto. de Fisica Aplicada and Inst. Universitario de Materiales de Alicante, Universidad de Alicante, E-03080 Alicante (Spain)], E-mail: igor.vragovic@ua.es; Calzado, Eva M.; Diaz Garcia, Maria A.; Himcinschi, C. [Max-Planck-Institut fuer Mikrostrukturphysik, D-06120 Halle (Germany); Gisslen, L.; Scholz, R. [Walter Schottky Institut, Technische Universitaet Muenchen, D-85748 Garching (Germany)

    2008-05-15

    We analyse the optical spectra of N,N{sup '}-diphenyl-N,N{sup '}-bis(3-methyl-phenyl)-(1,1{sup '}-biphenyl)-4,4{sup '}-diamine (TPD) doped polystyrene films. The aim of the present paper is to give a microscopic interpretation of the significant Stokes shift between absorption and photoluminescence, which makes this material suitable for stimulated emission. The optimized geometric structures and energies of a neutral TPD monomer in ground and excited states are obtained by ab initio calculations using Hartree-Fock and density functional theory. The results indicate that the second distinct peak observed in absorption may arise either from a group of higher electronic transitions of the monomer or from the lowest optical transitions of a TPD dimer.

  11. Modelling absorption and photoluminescence of TPD

    International Nuclear Information System (INIS)

    Vragovic, Igor; Calzado, Eva M.; Diaz Garcia, Maria A.; Himcinschi, C.; Gisslen, L.; Scholz, R.

    2008-01-01

    We analyse the optical spectra of N,N ' -diphenyl-N,N ' -bis(3-methyl-phenyl)-(1,1 ' -biphenyl)-4,4 ' -diamine (TPD) doped polystyrene films. The aim of the present paper is to give a microscopic interpretation of the significant Stokes shift between absorption and photoluminescence, which makes this material suitable for stimulated emission. The optimized geometric structures and energies of a neutral TPD monomer in ground and excited states are obtained by ab initio calculations using Hartree-Fock and density functional theory. The results indicate that the second distinct peak observed in absorption may arise either from a group of higher electronic transitions of the monomer or from the lowest optical transitions of a TPD dimer

  12. Annealing effect on the photoluminescence properties of ZnO nanorod array prepared by a PLD-assistant wet chemical method

    International Nuclear Information System (INIS)

    Wei Sufeng; Lian Jianshe; Wu Hua

    2010-01-01

    Well-aligned ZnO nanorod arrays were synthesized by a wet chemical method on the glass substrate with ZnO thin film as seed layer prepared by pulsed laser deposition. The effect of annealing temperature on the luminescence characteristics was investigated. As the annealing temperature increased, the photoluminescence properties show a general enhancing tendency. The nanorod array with high ultraviolet emission and negligible visible light emission (designated by the photoluminescence intensity ratio of ultraviolet to visible emission of 66.4) is obtained by annealing the sample at 700 deg. C for 1 h. Based on the results of X-ray photoelectron spectroscopy and photoluminescence spectra, the mechanisms of visible emission were discussed. - Research Highlights: → ZnO nanorod array with good crystallography, low defects concentration and good optical property was obtained after annealed at 700 deg. C for 1 h. → The transition from the conduction band to the O i level may be responsible for the yellow-green emission. → The yellow emission may originate from the presence of Zn(OH) 2 on the surface or the band transition from conduction band to V o Zn i level. → The transition from the Zn i level to the level should produce an orange emission or an orange-red emission.

  13. Photoluminescence enhancement from GaN by beryllium doping

    Science.gov (United States)

    García-Gutiérrez, R.; Ramos-Carrazco, A.; Berman-Mendoza, D.; Hirata, G. A.; Contreras, O. E.; Barboza-Flores, M.

    2016-10-01

    High quality Be-doped (Be = 0.19 at.%) GaN powder has been grown by reacting high purity Ga diluted alloys (Be-Ga) with ultra high purity ammonia in a horizontal quartz tube reactor at 1200 °C. An initial low-temperature treatment to dissolve ammonia into the Ga melt produced GaN powders with 100% reaction efficiency. Doping was achieved by dissolving beryllium into the gallium metal. The powders synthesized by this method regularly consist of two particle size distributions: large hollow columns with lengths between 5 and 10 μm and small platelets in a range of diameters among 1 and 3 μm. The GaN:Be powders present a high quality polycrystalline profile with preferential growth on the [10 1 bar 1] plane, observed by means of X-ray diffraction. The three characteristics growth planes of the GaN crystalline phase were found by using high resolution TEM microscopy. The optical enhancing of the emission in the GaN powder is attributed to defects created with the beryllium doping. The room temperature photoluminescence emission spectra of GaN:Be powders, revealed the presence of beryllium on a shoulder peak at 3.39 eV and an unusual Y6 emission at 3.32eV related to surface donor-acceptor pairs. Also, a donor-acceptor-pair transition at 3.17 eV and a phonon replica transition at 3.1 eV were observed at low temperature (10 K). The well-known yellow luminescence band coming from defects was observed in both spectra at room and low temperature. Cathodoluminescence emission from GaN:Be powders presents two main peaks associated with an ultraviolet band emission and the yellow emission known from defects. To study the trapping levels related with the defects formed in the GaN:Be, thermoluminescence glow curves were obtained using UV and β radiation in the range of 50 and 150 °C.

  14. Deep frying

    NARCIS (Netherlands)

    Koerten, van K.N.

    2016-01-01

    Deep frying is one of the most used methods in the food processing industry. Though practically any food can be fried, French fries are probably the most well-known deep fried products. The popularity of French fries stems from their unique taste and texture, a crispy outside with a mealy soft

  15. Remotely Triggered Solar Blind Signaling Using Deep Ultraviolet (UV) LEDs

    Science.gov (United States)

    2011-06-01

    observer, providing a means of visual communication even if the direct path is blocked...propogate toward the observer, providing a means of visual communication even if the direct path is blocked. 47 B. NLOS DETECTION USING LOCK-IN

  16. Deep Ultra-Violet (DUV) Light Emitting Diodes

    National Research Council Canada - National Science Library

    Singh, Deepika

    2003-01-01

    Problems to Overcome: The main problem to overcome is to develop a commercially and economically viable method to synthesize and process high crystalline quality diamond films for applications such as DUV LEDs and solar-blind detectors...

  17. Deep learning

    CERN Document Server

    Goodfellow, Ian; Courville, Aaron

    2016-01-01

    Deep learning is a form of machine learning that enables computers to learn from experience and understand the world in terms of a hierarchy of concepts. Because the computer gathers knowledge from experience, there is no need for a human computer operator to formally specify all the knowledge that the computer needs. The hierarchy of concepts allows the computer to learn complicated concepts by building them out of simpler ones; a graph of these hierarchies would be many layers deep. This book introduces a broad range of topics in deep learning. The text offers mathematical and conceptual background, covering relevant concepts in linear algebra, probability theory and information theory, numerical computation, and machine learning. It describes deep learning techniques used by practitioners in industry, including deep feedforward networks, regularization, optimization algorithms, convolutional networks, sequence modeling, and practical methodology; and it surveys such applications as natural language proces...

  18. Universal liquid-phase laser fabrication of various nano-metals encapsulated by ultrathin carbon shells for deep-UV plasmonics.

    Science.gov (United States)

    Yu, Miao; Yang, Chao; Li, Xiao-Ming; Lei, Tian-Yu; Sun, Hao-Xuan; Dai, Li-Ping; Gu, Yu; Ning, Xue; Zhou, Ting; Wang, Chao; Zeng, Hai-Bo; Xiong, Jie

    2017-06-29

    The exploration of localized surface plasmon resonance (LSPR) beyond the usual visible waveband, for example within the ultraviolet (UV) or deep-ultraviolet (D-UV) regions, is of great significance due to its unique applications in secret communications and optics. However, it is still challenging to universally synthesize the corresponding metal nanostructures due to their high activity. Herein, we report a universal, eco-friendly, facile and rapid synthesis of various nano-metals encapsulated by ultrathin carbon shells, significantly with a remarkable deep-UV LSPR characteristic, via a liquid-phase laser fabrication method. Firstly, a new generation of the laser ablation in liquid (LAL) method has been developed with an emphasis on the elaborate selection of solvents to generate ultrathin carbon shells, and hence to stabilize the formed metal nanocrystals. As a result, a series of metal@carbon nanoparticles (NPs), including Cr@C, Ti@C, Fe@C, V@C, Al@C, Sn@C, Mn@C and Pd@C, can be fabricated by this modified LAL method. Interestingly, these NPs exhibit LSPR peaks in the range of 200-330 nm, which are very rare for localized surface plasmon resonance. Consequently, the UV plasmonic effects of these metal@carbon NPs were demonstrated both by the observed enhancement in UV photoluminescence (PL) from the carbon nanoshells and by the improvement of the photo-responsivity of UV GaN photodetectors. This work could provide a universal method for carbon shelled metal NPs and expand plasmonics into the D-UV waveband.

  19. Ultraviolet dosimetry using thermoluminescent phosphors - an update

    International Nuclear Information System (INIS)

    Nagpal, J.S.

    1998-04-01

    Intrinsic response of various thermoluminescent (TL) materials such as CaSO 4 (Dy, Eu, Mn, Sm, Tb, or Tm), LiF (Mg, Cu, P), Mg 2 SiO 4 :Tb, CaF 2 :Dy, CaF 2 :Tb, ThO 2 :Tb and Al 2 O 3 (Si, Ti); cathodoluminescent phosphors Y 3 Al 5 O 12 :Ce, Y 3 Al 5 O 12 :Tb and Y(V,P)O 4 :Eu; and fluorescent lamp phosphors calcium halophosphate (Mn,Sb) and Ce Mg aluminate (Eu, Tb) to ultraviolet (UV) radiations has been studied. Intrinsic TL response of most of the phosphors is rate (radiant flux) dependent. For the first time, UV response of the materials is reported for a fixed total radiant energy (total UV dose), at a single radiant flux (260 μW.cm -2 ), for an appropriate comparison. A wide range of UV sensitivity is observed. Studies conducted using UV radiation from two unfiltered low pressure mercury lamps show significant differences in glow curves, as compared to those obtained with nearly monochromatic UV radiations. Photons of wavelength 365 nm induce bleaching of TL induced by 254 nm photons, in most of the materials. Sequential/tandem exposures to 254 nm and 365 nm photons have yielded new but alarming results in CaF 2 :Tb. Preferential induction and bleaching of specific TL glow peaks by 365 nm and 254 nm photons are interesting characteristics discovered in CaSO 4 :Eu. Photoluminescence studies of Tb 3+ and Eu 3+ activated phosphors have augmented the inferences drawn from the bleaching effects produced by 365 nm photons. Earlier work carried out on phototransferred thermoluminescence of CaSO 4 :Dy-teflon dosimeters, TLD-100, Mg 2 SiO 4 :Tb and Al 2 O 3 (Si,Ti) has also been reviewed. (author)

  20. Synthesis, structure, optical, photoluminescence and magnetic properties of K2[Co(C2O4)2(H2O)2]·4H2O

    Science.gov (United States)

    Narsimhulu, M.; Hussain, K. A.

    2018-06-01

    The synthesis, crystal structure, optical, photoluminescence and magnetic behaviour of potassium bis(oxalato)cobaltate(II)tertrahydrate{K2[Co(C2O4)2(H2O)2]·4H2O} are described. The compound was grown at room temperature from mixture of aqueous solutions by slow evaporation method. The X-ray crystallographic data showed that the compound belongs to the monoclinic crystal system with P21/n space group and Z = 4. The UV-visible diffuse absorbance spectra exhibited bands at 253, 285 and 541 nm in the visible and ultraviolet regions. The optical band gap of the compound was estimated as 3.4 eV. At room temperature, an intense photoluminescence was observed from this material around 392 nm when it excited at 254 nm. The variable temperature dc magnetic susceptibility measurements exposed paramagnetic behaviour at high temperatures and antiferromagnetic ordering at low temperatures.

  1. Ultraviolet photovoltaics: Share the spectrum

    Science.gov (United States)

    Milliron, Delia J.

    2017-08-01

    Electrically controlled windows require power to switch between transparent and tinted states. Now, an ultraviolet light-harvesting solar cell can power smart windows without compromising their control over heat and light.

  2. Photoluminescence of self-organized perylene bisimide polymers

    NARCIS (Netherlands)

    Neuteboom, E.E.; Meskers, S.C.J.; Meijer, E.W.; Janssen, R.A.J.

    2004-01-01

    Three polymers consisting of alternating perylene bisimide chromophores and flexible polytetrahydrofuran segments of different length have been studied using absorption and (time-resolved) photoluminescence spectroscopy. In o-dichlorobenzene, the chromophores self organize to form H-like aggregates.

  3. Photoluminescent carbogenic nanoparticles directly derived from crude biomass

    KAUST Repository

    Krysmann, Marta J.; Kelarakis, Antonios; Giannelis, Emmanuel P.

    2012-01-01

    We present an environmentally benign, energy efficient and readily scalable approach to synthesize photoluminescent carbogenic nanoparticles directly from soft tissue biomass. Our approach relies on the pyrolytic decomposition of grass that gives

  4. Solar ultraviolet radiation cataract.

    Science.gov (United States)

    Löfgren, Stefan

    2017-03-01

    Despite being a treatable disease, cataract is still the leading cause for blindness in the world. Solar ultraviolet radiation is epidemiologically linked to cataract development, while animal and in vitro studies prove a causal relationship. However, the pathogenetic pathways for the disease are not fully understood and there is still no perfect model for human age related cataract. This non-comprehensive overview focus on recent developments regarding effects of solar UV radiation wavebands on the lens. A smaller number of fundamental papers are also included to provide a backdrop for the overview. Future studies are expected to further clarify the cellular and subcellular mechanisms for UV radiation-induced cataract and especially the isolated or combined temporal and spatial effects of UVA and UVB in the pathogenesis of human cataract. Regardless of the cause for cataract, there is a need for advances in pharmaceutical or other treatment modalities that do not require surgical replacement of the lens. Copyright © 2016. Published by Elsevier Ltd.

  5. Ultraviolet radiation and cyanobacteria.

    Science.gov (United States)

    Rastogi, Rajesh Prasad; Sinha, Rajeshwar P; Moh, Sang Hyun; Lee, Taek Kyun; Kottuparambil, Sreejith; Kim, Youn-Jung; Rhee, Jae-Sung; Choi, Eun-Mi; Brown, Murray T; Häder, Donat-Peter; Han, Taejun

    2014-12-01

    Cyanobacteria are the dominant photosynthetic prokaryotes from an ecological, economical, or evolutionary perspective, and depend on solar energy to conduct their normal life processes. However, the marked increase in solar ultraviolet radiation (UVR) caused by the continuous depletion of the stratospheric ozone shield has fueled serious concerns about the ecological consequences for all living organisms, including cyanobacteria. UV-B radiation can damage cellular DNA and several physiological and biochemical processes in cyanobacterial cells, either directly, through its interaction with certain biomolecules that absorb in the UV range, or indirectly, with the oxidative stress exerted by reactive oxygen species. However, cyanobacteria have a long history of survival on Earth, and they predate the existence of the present ozone shield. To withstand the detrimental effects of solar UVR, these prokaryotes have evolved several lines of defense and various tolerance mechanisms, including avoidance, antioxidant production, DNA repair, protein resynthesis, programmed cell death, and the synthesis of UV-absorbing/screening compounds, such as mycosporine-like amino acids (MAAs) and scytonemin. This study critically reviews the current information on the effects of UVR on several physiological and biochemical processes of cyanobacteria and the various tolerance mechanisms they have developed. Genomic insights into the biosynthesis of MAAs and scytonemin and recent advances in our understanding of the roles of exopolysaccharides and heat shock proteins in photoprotection are also discussed. Copyright © 2014 Elsevier B.V. All rights reserved.

  6. Ultraviolet radiation in Finland

    Energy Technology Data Exchange (ETDEWEB)

    Taalas, P.; Koskela, T.; Damski, J.; Supperi, A. [Finnish Meteorological Inst., Helsinki (Finland). Section of Ozone and UV Research; Kyroe, E. [Finnish Meteorological Inst., Sodankylae (Finland). Sodankylae Observatory

    1996-12-31

    Solar ultraviolet radiation is damaging for living organisms due to its high energy pro each photon. The UV radiation is often separated into three regions according to the wavelength: UVC (200-280 nm), UVB (280-320 nm) and UVA (320-400 nm). The most hazardous part, UVC is absorbed completely in the upper atmosphere by molecular oxygen. UVB radiation is absorbed by atmospheric ozone partly, and it is reaching Earth`s surface, as UVA radiation. Besides atmospheric ozone, very important factors in determining the intensity of UVB radiation globally are the solar zenith angle and cloudiness. It may be calculated from global ozone changes that the clear-sky UVB doses may have enhanced by 10-15 % during spring and 5-10 % during summer at the latitudes of Finland, following the decrease of total ozone between 1979-90. The Finnish ozone and UV monitoring activities have become a part of international activities, especially the EU Environment and Climate Programme`s research projects. The main national level effort has been the Finnish Academy`s climatic change programme, SILMU 1990-95. This presentation summarises the scientific results reached during the SILMU project

  7. Ultraviolet radiation: the eye

    International Nuclear Information System (INIS)

    Cesarini, J.P.; Sliney, D.H.

    1996-01-01

    Under most conditions, the eye is well adapted to protect itself against ultraviolet radiation encountered in the outdoor environment as a result of the exposure geometry of the sun. Only when snow is on the ground does one experience acute effects of UV sunlight exposure (i.e. snow blindness, or photokeratitis). With regard to artificial sources, there are many occasions where one views bright light sources such as tungsten-halogen lamps, arc lamps and welding arcs. Such viewing is normally only momentary because of the aversion response to bright light and due to discomfort glare. However, such an aversion does not take place for germicidal lamps and other UV lamps which do not contain a strong visible component in their spectrum. The adverse effects from viewing such sources has been studied for decades and during the last two decades guidelines for limiting exposure to protect the eye have been developed. The guidelines were fostered to a large extent by the growing use of lasers and the quickly recognized hazard posed by viewing laser sources. (author)

  8. Ultraviolet radiation in Finland

    Energy Technology Data Exchange (ETDEWEB)

    Taalas, P; Koskela, T; Damski, J; Supperi, A [Finnish Meteorological Inst., Helsinki (Finland). Section of Ozone and UV Research; Kyroe, E [Finnish Meteorological Inst., Sodankylae (Finland). Sodankylae Observatory

    1997-12-31

    Solar ultraviolet radiation is damaging for living organisms due to its high energy pro each photon. The UV radiation is often separated into three regions according to the wavelength: UVC (200-280 nm), UVB (280-320 nm) and UVA (320-400 nm). The most hazardous part, UVC is absorbed completely in the upper atmosphere by molecular oxygen. UVB radiation is absorbed by atmospheric ozone partly, and it is reaching Earth`s surface, as UVA radiation. Besides atmospheric ozone, very important factors in determining the intensity of UVB radiation globally are the solar zenith angle and cloudiness. It may be calculated from global ozone changes that the clear-sky UVB doses may have enhanced by 10-15 % during spring and 5-10 % during summer at the latitudes of Finland, following the decrease of total ozone between 1979-90. The Finnish ozone and UV monitoring activities have become a part of international activities, especially the EU Environment and Climate Programme`s research projects. The main national level effort has been the Finnish Academy`s climatic change programme, SILMU 1990-95. This presentation summarises the scientific results reached during the SILMU project

  9. Ultraviolet Communication for Medical Applications

    Science.gov (United States)

    2015-06-01

    DEI procured several UVC phosphors and tested them with vacuum UV (VUV) excitation. Available emission peaks include: 226 nm, 230 nm, 234 nm, 242...SUPPLEMENTARY NOTES Report contains color. 14. ABSTRACT Under this Phase II SBIR effort, Directed Energy Inc.’s (DEI) proprietary ultraviolet ( UV ...15. SUBJECT TERMS Non-line-of-sight (NLOS), networking, optical communication, plasma-shells, short range, ultraviolet ( UV ) light 16. SECURITY

  10. ULTRAVIOLET TECHNOLOGY FOR FOOD PRESERVATION

    OpenAIRE

    Guedes, AMM; Novello, D; Mendes, GMD; Cristianini, M

    2009-01-01

    ULTRAVIOLET TECHNOLOGY FOR FOOD PRESERVATION This literature review article had as objective to gather information about ultraviolet (UV) technology utilization on the food industry, its effects and potential application. Aspects as the origin, concept and applications of the technology on the equipment industry and running mechanisms were approached. The application of UV radiation on food decontamination is still little used due its low penetration, but it is known that it can be easily app...

  11. Development of a backscattering type ultraviolet apertureless near-field scanning optical microscope.

    Science.gov (United States)

    Kwon, Sangjin; Jeong, Hyun; Jeong, Mun Seok; Jeong, Sungho

    2011-08-01

    A backscattering type ultraviolet apertureless near-field scanning optical microscope (ANSOM) for the correlated measurement of topographical and optical characteristics of photonic materials with high optical resolution was developed. The near-field Rayleigh scattering image of GaN covered with periodic submicron Cr dots showed that optical resolution around 40 nm was achievable. By measuring the tip scattered photoluminescence of InGaN/GaN multi quantum wells, the applicability of the developed microscope for high resolution fluorescence measurement was also demonstrated.

  12. Photoluminescent carbogenic nanoparticles directly derived from crude biomass

    KAUST Repository

    Krysmann, Marta J.

    2012-01-01

    We present an environmentally benign, energy efficient and readily scalable approach to synthesize photoluminescent carbogenic nanoparticles directly from soft tissue biomass. Our approach relies on the pyrolytic decomposition of grass that gives rise to the formation of well-defined nanoparticles. The carbogenic nanoparticles can be readily surface modified, generating a series of highly selective photoluminescent materials that exhibit remarkable stability upon prolonged exposure to aggressive, high-temperature, high-salinity environment. © 2012 The Royal Society of Chemistry.

  13. Photoluminescence of carbon dots from mesoporous silica

    Science.gov (United States)

    Nelson, D. K.; Razbirin, B. S.; Starukhin, A. N.; Eurov, D. A.; Kurdyukov, D. A.; Stovpiaga, E. Yu; Golubev, V. G.

    2016-09-01

    Photophysical properties of carbon dots were investigated under various excitation conditions and over a wide temperature region - from room to liquid helium temperatures. The carbon dots (CDs) were synthesized using mesoporous silica particles as a reactor and (3-aminopropyl)triethoxysilane (APTES) as a precursor. The photoluminescence spectra of CDs exhibit a strong dependence on the excitation wavelength and demonstrate a significant inhomogeneous broadening. Lowering sample temperature reveals the doublet structure of the spectra, which is associated with the vibronic structure of radiative transitions. The vibration energy ∼1200 cm-1 is close to the energy of Csbnd O stretching vibration. Long-lived phosphorescence of carbon dots with its decay time ∼0.2 s at T = 80 K was observed. The fluorescence and phosphorescence spectra are shown to be spectrally separated. The long-lived component of the emission was ascribed to optically forbidden triplet-singlet transitions. The value of the singlet-triplet splitting was found to be about 0.3 eV. Photo-induced polarization of the luminescence of carbon dots was revealed. The degree of the linear polarization is dependent on the wavelengths of both excitation and emitted light. The effect indicates a hidden anisotropy of optical dipole transitions in the dots and demonstrates the loss of the dipole orientation during the electron energy relaxation.

  14. Using quantum dot photoluminescence for load detection

    Science.gov (United States)

    Moebius, M.; Martin, J.; Hartwig, M.; Baumann, R. R.; Otto, T.; Gessner, T.

    2016-08-01

    We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N',N'-Tetrakis(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  15. Using quantum dot photoluminescence for load detection

    Directory of Open Access Journals (Sweden)

    M. Moebius

    2016-08-01

    Full Text Available We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl-3,3′-dimethylbenzidine (HMTPD and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

  16. Solvothermal tuning of photoluminescent graphene quantum dots: from preparation to photoluminescence mechanism

    Science.gov (United States)

    Qi, Bao-Ping; Zhang, Xiaoru; Shang, Bing-Bing; Xiang, Dongshan; Zhang, Shenghui

    2018-02-01

    Solvothermal synthesis was employed to tune the surface states of graphene quantum dots (GQDs). Two series of GQDs with the particle sizes from 2.6 to 4.5 nm were prepared as follows: (I) GQDs with the same size but different oxygen degrees; (II) GQDs with different core sizes but the similar surface chemistry. Both the large sizes and the high surface oxidation degrees led to the redshift photoluminescence (PL) of GQDs. Electrochemiluminescence (ECL) spectra from two series of GQDs were all in accordance with their PL spectra, respectively, which provided good evidence for the conjugated structures in GQDs responsible for PL. [Figure not available: see fulltext.

  17. Photoluminescence properties of perovskite multilayer thin films

    Energy Technology Data Exchange (ETDEWEB)

    Macario, Leilane Roberta; Longo, Elson, E-mail: leilanemacario@gmail.com [Universidade Federal de Sao Carlos (UFSCar), SP (Brazil); Mazzo, Tatiana Martelli [Universidade Federal de Sao Paulo (UNIFESP), SP (Brazil); Bouquet, Valerie; Deputier, Stephanie; Ollivier, Sophie; Guilloux-Viry, Maryline [Universite de Rennes (France)

    2016-07-01

    Full text: The knowledge of the optical properties of thin films is important in many scientific, technological and industrial applications of thin films such as photoconductivity, solar energy, photography, and numerous other applications [1]. In this study, perovskite type oxides were grown by pulsed laser deposition [2] in order to obtain thin films with applicable optical properties. The LaNiO{sub 3} (LN), BaTiO{sub 3} (BT) and KNbO{sub 3} (KNb) targets were prepared by solid-state reaction. The X-ray Diffraction revealed the presence of the desired phases, containing the elements of interest in the targets and in the thin films that were produced. The LN, BT and KNb thin films were polycrystalline and the corresponding diffraction peaks were indexed in the with JCPDS cards n. 00-033-0711, n. 00-005-0626, and n. 00-009-0156, respectively. The multilayers films were polycrystalline. The majority of the micrographs obtained by scanning electron microscopy presented films with a thickness from 100 to 400 nm. The photoluminescent (PL) emission spectra of thin films show different broad bands that occupies large region of the visible spectrum, ranging from about 300-350 to 600-650 nm of the electromagnetic spectrum. The PL emission is associated with the order-disorder structural, even small structural changes can modify the interactions between electronic states. The structural disorder results in formation of new energy levels in the forbidden region. The proximity or distance of these new energy levels formed in relation to valence band and to the conduction band results in PL spectra located at higher or lower energies. These interactions change the electronic states which can be influenced by defects, particularly the interface defects between the layers of the thin films. The presence of defects results in changes in the broad band matrix intensity and in displacement of the PL emission maximum. (author)

  18. A novel approach to obtain highly intense self-activated photoluminescence emissions in hydroxyapatite nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Machado, Thales R. [CDMF-UFSCar, Universidade Federal de São Carlos, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil); QIO-UJI, Universitat Jaume I, 12071 Castellón (Spain); Sczancoski, Júlio C. [CDMF-UFSCar, Universidade Federal de São Carlos, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil); Beltrán-Mir, Héctor [QIO-UJI, Universitat Jaume I, 12071 Castellón (Spain); Nogueira, Içamira C. [PPGEM-IFMA, Instituto Federal de Educação, Ciência e Tecnologia do Maranhão, 65030-005 São Luís, MA (Brazil); Li, Máximo S. [IFSC-USP, Universidade de São Paulo, P.O. Box 369, 13560-970 São Carlos, SP (Brazil); Andrés, Juan [QFA-UJI, Universitat Jaume I, 12071 Castellón (Spain); Cordoncillo, Eloisa [QIO-UJI, Universitat Jaume I, 12071 Castellón (Spain); Longo, Elson, E-mail: elson.liec@gmail.com [CDMF-UFSCar, Universidade Federal de São Carlos, P.O. Box 676, 13565-905 São Carlos, São Paulo (Brazil)

    2017-05-15

    Defect-related photoluminescence (PL) in materials have attracted interest for applications including near ultraviolet (NUV) excitable light-emitting diodes and in biomedical field. In this paper, hydroxyapatite [Ca{sub 10}(PO{sub 4}){sub 6}(OH){sub 2}] nanorods with intense PL bands (bluish- and yellowish-white emissions) were obtained when excited under NUV radiation at room temperature. These nanoparticles were synthesized via chemical precipitation at 90 °C followed by distinct heat treatments temperatures (200–800 °C). Intense and broad emission profiles were achieved at 350 °C (380–750 nm) and 400 °C (380–800 nm). UV–Vis spectroscopy revealed band gap energies (5.58–5.78 eV) higher than the excitation energies (~3.54 and ~2.98 eV at 350 and 415 nm, respectively), confirming the contribution of defect energy levels within the forbidden zone for PL emissions. The structural features were characterized by X-ray diffraction, Rietveld refinement, thermogravimetric analysis, and Fourier transform infrared spectroscopy. By means of these techniques, the relation between structural order-disorder induced by defects, chemical reactions at both lattice and surface of the materials as well as the PL, without activator centers, was discussed in details. - Graphical abstract: The self-activated photoluminescence emissions of chemically precipitated hydroxyapatite nanorods were improved by different heat treatment temperatures. - Highlights: • HA nanorods were synthesized with improved self-activated PL at room temperature. • PL profile and intensity dependents on the temperature of posterior heat treatments. • Bluish- and yellowish-white emissions under NUV excitation (350 and 415 nm). • Broad and intense profiles achieved at 350 °C (380–750 nm) and 400 °C (380–800 nm). • PL from the e′–h{sup •} recombination between defect energy levels within the band gap.

  19. Presence of photoluminescent carbon dots in Nescafe® original instant coffee: applications to bioimaging.

    Science.gov (United States)

    Jiang, Chengkun; Wu, Hao; Song, Xiaojie; Ma, Xiaojun; Wang, Jihui; Tan, Mingqian

    2014-09-01

    The presence of the carbon dots (C-dots) in food is a hotly debated topic and our knowledge about the presence and the use of carbon dots (C-dots) in food is still in its infancy. We report the finding of the presence of photoluminescent (PL) C-dots in commercial Nescafe instant coffee. TEM analysis reveals that the extracted C-dots have an average size of 4.4 nm. They were well-dispersed in water and strongly photoluminescent under the excitation of ultra-violet light with a quantum yield (QY) about 5.5%, which were also found to possess clear upconversion PL properties. X-ray photoelectron spectroscopy characterization demonstrates that the C-dots contain C, O and N three elements with the relative contents ca. 30.1, 62.2 and 7.8%. The X-ray diffraction (XRD) analysis indicates that the C-dots are amorphous. Fourier-transform infrared (FTIR) spectra were employed to characterize the surface groups of the C-dots. The C-dots show a pH independent behavior by varying the pH value from 2 to 11. The cytotoxicity study revealed that the C-dots did not cause any toxicity to cells at a concentration as high as 20 mg/mL. The C-dots have been directly applied in cells and fish imaging, which suggested that the C-dots present in commercial coffee may have more potential biological applications. Copyright © 2014. Published by Elsevier B.V.

  20. Synthesis of silver hollow nanoparticles and observation of photoluminescence emission properties

    International Nuclear Information System (INIS)

    Desarkar, H.S.; Kumbhakar, P.; Mitra, A.K.

    2013-01-01

    Preparation of hollow silver nanoparticles (HSNs) along-with solid silver nanoparticles are reported by Nd:YAG laser ablation of solid silver target immersed in water medium with a laser ablation time (LAT) duration of 50 min and with the incident laser fluence of 151 J/cm 2 . It is found that only solid silver nanoparticles are produced when the experiment is carried out with smaller values of LAT duration. The synthesized samples are characterized by using transmission electron microscopy and UV–Visible absorption spectroscopy. The UV–Visible absorption spectra of the samples show sharp absorptions in the ultraviolet and in visible regions due to interband transition and surface plasmon resonance oscillations in Ag nanoparticles, respectively. It is found that all samples exhibit photoluminescence (PL) emission, at room temperature, in the UV–Visible region peaked at ∼346 nm, due to the recombination of electrons with holes from sp conduction band to d band of Ag. The sample containing HSNs exhibits strong PL emission and the value of peak PL emission intensity is enhanced by the factor of 2.4 in comparison to that obtained from the sample synthesized with LAT duration of 20 min. The synthesized HSNs may find applications in catalysis and in chemical sensing. - Highlights: ►Hollow silver nanoparticles of 15–60 nm particle sizes are prepared by laser ablation. ►Prepared Ag nanoparticles show sharp absorptions in the UV and visible regions. ►Strong interband transition along-with SPR oscillations is reported. ►Enhancement (2.4 times) in photoluminescence emission in the UV region is reported.

  1. Harmful effects of ultraviolet radiation

    International Nuclear Information System (INIS)

    Anon.

    1989-01-01

    Tanning for cosmetic purposes by sunbathing or by using artificial tanning devices is widespread. The hazards associated with exposure to ultraviolet radiation are of concern to the medical profession. Depending on the amount and form of the radiation, as well as on the skin type of the individual exposed, ultraviolet radiation causes erythema, sunburn, photodamage (photoaging), photocarcinogenesis, damage to the eyes, alteration of the immune system of the skin, and chemical hypersensitivity. Skin cancers most commonly produced by ultraviolet radiation are basal and squamous cell carcinomas. There also is much circumstantial evidence that the increase in the incidence of cutaneous malignant melanoma during the past half century is related to increased sun exposure, but this has not been proved. Effective and cosmetically acceptable sunscreen preparations have been developed that can do much to prevent or reduce most harmful effects to ultraviolet radiation if they are applied properly and consistently. Other safety measures include (1) minimizing exposure to ultraviolet radiation, (2) being aware of reflective surfaces while in the sun, (3) wearing protective clothing, (4) avoiding use of artificial tanning devices, and (5) protecting infants and children

  2. Future Directions in Ultraviolet Spectroscopy

    Science.gov (United States)

    Sonneborn, George (Editor); Moos, Warren; VanSteenberg, Michael

    2009-01-01

    The 'Future Directions in Ultraviolet Spectroscopy' conference was inspired by the accomplishments of the Far Ultraviolet Spectroscopic Explorer (FUSE) Mission. The FUSE mission was launched in June 1999 and spent over eight years exploring the far-ultraviolet universe, gathering over 64 million seconds of high-resolution spectral data on nearly 3000 astronomical targets. The goal of this conference was not only to celebrate the accomplishments of FUSE, but to look toward the future and understand the major scientific drivers for the ultraviolet capabilities of the next generation fo space observatories. Invited speakers presented discussions based on measurements made by FUSE and other ultraviolet instruments, assessed their connection with measurements made with other techniques and, where appropriate, discussed the implications of low-z measurements for high-z phenomena. In addition to the oral presentations, many participants presented poster papers. The breadth of these presentation made it clear that much good science is still in progress with FUSE data and that these result will continue to have relevance in many scientific areas.

  3. Engineering of the photoluminescence of ZnO nanowires by different growth and annealing environments

    DEFF Research Database (Denmark)

    Fernandes Cauduro, André Luis; Sombrio, C I L; Franzen, P L

    2015-01-01

    Optical properties of ZnO nanowires were investigated through photoluminescence (PL) at room and low temperatures. An excitonic structure was observed in the UV band emission and we are able to distinguish between free excitons, bound excitons and donor acceptor pairs. The PL spectra shows deep...... level emissions ranging from 1.4 eV up to 2.8 eV, strongly depending on surface defects whereas the red emission (1.7 eV) is activated at cryogenic temperatures. We attribute the green luminescence (2.4 eV) emission to the presence of zinc vacancies into ZnO nanowires. Further evidences that confirm...... the mechanism are observed in the PL emission spectra after annealing in O2 or Ar environments....

  4. Photoluminescence study of novel phosphorus-doped ZnO nanotetrapods synthesized by chemical vapour deposition

    International Nuclear Information System (INIS)

    Yu Dongqi; Hu Lizhong; Qiao Shuangshuang; Zhang Heqiu; Fu Qiang; Chen Xi; Sun Kaitong; Len, Song-En Andy; Len, L K

    2009-01-01

    Novel phosphorus-doped and undoped single crystal ZnO nanotetrapods were fabricated on sapphire by a simple chemical vapour deposition method, using phosphorus pentoxide (P 2 O 5 ) as the dopant source. The optical properties of the samples were investigated by photoluminescence (PL) spectroscopy. Low-temperature PL measurements of phosphorus-doped and undoped samples were compared, and the results indicated a decrease in deep level defects due to the incorporation of a phosphorus acceptor dopant. The PL spectrum of the phosphorus-doped sample at 10 K exhibited several acceptor-bound exciton related emission peaks. The effect of phosphorus doping on the optical characteristics of the samples was investigated by excitation intensity and temperature dependent PL spectra. The acceptor-binding energies of the phosphorus dopant were estimated to be about 120 meV, in good agreement with the corresponding theoretical and experimental values in phosphorus-doped ZnO films and nanowires.

  5. Strategy for synthesizing quantum dot-layered double hydroxide nanocomposites and their enhanced photoluminescence and photostability.

    Science.gov (United States)

    Cho, Seungho; Jung, Sungwook; Jeong, Sanghwa; Bang, Jiwon; Park, Joonhyuck; Park, Youngrong; Kim, Sungjee

    2013-01-08

    Layered double hydroxide-quantum dot (LDH-QD) composites are synthesized via a room temperature LDH formation reaction in the presence of QDs. InP/ZnS (core/shell) QD, a heavy metal free QD, is used as a model constituent. Interactions between QDs (with negative zeta potentials), decorated with dihydrolipoic acids, and inherently positively charged metal hydroxide layers of LDH during the LDH formations are induced to form the LDH-QD composites. The formation of the LDH-QD composites affords significantly enhanced photoluminescence quantum yields and thermal- and photostabilities compared to their QD counterparts. In addition, the fluorescence from the solid LDH-QD composite preserved the initial optical properties of the QD colloid solution without noticeable deteriorations such as red-shift or deep trap emission. Based on their advantageous optical properties, we also demonstrate the pseudo white light emitting diode, down-converted by the LDH-QD composites.

  6. Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC

    International Nuclear Information System (INIS)

    Zhong, Z.Q.; Wu, D.X.; Gong, M.; Wang, O.; Shi, S.L.; Xu, S.J.; Chen, X.D.; Ling, C.C.; Fung, S.; Beling, C.D.; Brauer, G.; Anwand, W.; Skorupa, W.

    2006-01-01

    Low-temperature photoluminescence spectroscopy has revealed a series of features labeled S 1 , S 2 , S 3 in n-type 6H-SiC after neutron and electron irradiation. Thermal annealing studies showed that the defects S 1 , S 2 , S 3 disappeared at 500 deg. C. However, the well-known D 1 center was only detected for annealing temperatures over 700 deg. C. This experimental observation not only indicated that the defects S 1 , S 2 , S 3 were a set of primary defects and the D 1 center was a kind of secondary defect, but also showed that the D 1 center and the E 1 , E 2 observed using deep level transient spectroscopy might not be the same type of defects arising from the same physical origin

  7. Femtosecond pulsed laser ablation in microfluidics for synthesis of photoluminescent ZnSe quantum dots

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Chao, E-mail: chaoyangscu@gmail.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Feng, Guoying, E-mail: guoing_feng@scu.edu.cn [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Dai, Shenyu, E-mail: 232127079@qq.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Wang, Shutong, E-mail: wangshutong.scu@gmail.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Li, Guang, E-mail: 632524844@qq.com [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Zhang, Hua [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); Zhou, Shouhuan, E-mail: zhoush@scu.edu.cn [College of Electronics and Information Engineering, Sichuan University, No. 24 South Section 1, 1st Ring Road, Chengdu 610064 (China); North China Research Institute of Electro-Optics, 4 Jiuxianqiao Street, Chaoyang District, Beijing 100015 (China)

    2017-08-31

    Highlights: • A novel method for synthesis and coating of quantum dots by ultrafast laser pulses. • Mild and “green” synthesis method without toxic chemicals. • Enhanced bright green light emission without doped transition metal ions. • Ultrafast laser and coating layer enhanced the emission originated from defects. - Abstract: A simple but new toxic chemical free method, Femtosecond Laser Ablation in Microfluidics (FLAM) was proposed for the first time. ZnSe quantum dots of 4–6 nm were synthesized and with the use of hyperbranched Polyethyleneimine (PEI) as both structural and functional coated layer. These aqueous nanosized micelles consisting of quantum dots exhibit deep defect states emission of bright green light centered at 500 nm. A possible mechanism for the enhanced board band emission was discussed. The properties of toxic matters free and enhanced photoluminescence without doped transition metal ions demonstrate an application potential for biomedical imaging.

  8. Femtosecond pulsed laser ablation in microfluidics for synthesis of photoluminescent ZnSe quantum dots

    International Nuclear Information System (INIS)

    Yang, Chao; Feng, Guoying; Dai, Shenyu; Wang, Shutong; Li, Guang; Zhang, Hua; Zhou, Shouhuan

    2017-01-01

    Highlights: • A novel method for synthesis and coating of quantum dots by ultrafast laser pulses. • Mild and “green” synthesis method without toxic chemicals. • Enhanced bright green light emission without doped transition metal ions. • Ultrafast laser and coating layer enhanced the emission originated from defects. - Abstract: A simple but new toxic chemical free method, Femtosecond Laser Ablation in Microfluidics (FLAM) was proposed for the first time. ZnSe quantum dots of 4–6 nm were synthesized and with the use of hyperbranched Polyethyleneimine (PEI) as both structural and functional coated layer. These aqueous nanosized micelles consisting of quantum dots exhibit deep defect states emission of bright green light centered at 500 nm. A possible mechanism for the enhanced board band emission was discussed. The properties of toxic matters free and enhanced photoluminescence without doped transition metal ions demonstrate an application potential for biomedical imaging.

  9. Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells

    International Nuclear Information System (INIS)

    Pincik, E.; Kobayashi, H.; Takahashi, M.; Fujiwara, N.; Brunner, R.; Gleskova, H.; Jergel, M.; Muellerova, J.; Kucera, M.; Falcony, C.; Ortega, L.; Rusnak, J.; Mikula, M.; Zahoran, M.; Jurani, R.; Kral, M.

    2004-01-01

    This paper deals with the photoluminescence, structural and electrical properties of chemically passivated a-Si:H based thin films and corresponding thin film solar cells. The structures were chemically passivated in three types of KCN and HCN solutions containing MeOH and/or with water. The photoluminescence measurements were performed at 6 K using Ar laser and lock-in signal recording device containing Ge and Si photodetectors. Optically determined band gap related photoluminescence signals were observed between 1.1 and 1.7 eV. The electrical properties were measured by a high-sensitive charge version of deep level transient spectroscopy (Q-DLTS). The evolution of three basic groups of defects was observed. The structural studies were realized by the standard X-ray diffraction analysis. The cyanide treatment improved significantly the electrical characteristics of both corresponding MOS structures and solar cells due to the passivation of some parts of the dangling bonds by CN group. Particularly, the passivation of the defects at interfaces in MOS or solar cell multilayer structures was achieved which is of primary practical importance

  10. Ultraviolet-radiation-curable paints

    Energy Technology Data Exchange (ETDEWEB)

    Grosset, A M; Su, W F.A.; Vanderglas, E

    1981-09-30

    In product finishing lines, ultraviolet radiation curing of paints on prefabricated structures could be more energy efficient than curing by natural gas fired ovens, and could eliminate solvent emission. Diffuse ultraviolet light can cure paints on three dimensional metal parts. In the uv curing process, the spectral output of radiation sources must complement the absorption spectra of pigments and photoactive agents. Photosensitive compounds, such as thioxanthones, can photoinitiate unsaturated resins, such as acrylated polyurethanes, by a free radical mechanism. Newly developed cationic photoinitiators, such as sulfonium or iodonium salts (the so-called onium salts) of complex metal halide anions, can be used in polymerization of epoxy paints by ultraviolet light radiation. One-coat enamels, topcoats, and primers have been developed which can be photoinitiated to produce hard, adherent films. This process has been tested in a laboratory scale unit by spray coating these materials on three-dimensional objects and passing them through a tunnel containing uv lamps.

  11. Photoluminescent properties of complex metal oxide nanopowders for gas sensing

    Science.gov (United States)

    Bovhyra, R. V.; Mudry, S. I.; Popovych, D. I.; Savka, S. S.; Serednytski, A. S.; Venhryn, Yu. I.

    2018-03-01

    This work carried out research on the features of photoluminescence of the mixed and complex metal oxide nanopowders (ZnO/TiO2, ZnO/SnO2, Zn2SiO4) in vacuum and gaseous ambient. The nanopowders were obtained using pulsed laser reactive technology. The synthesized nanoparticles were characterized by X-ray diffractometry, energy-dispersive X-ray analysis, and scanning and transmission electron microscopy analysis for their sizes, shapes and collocation. The influence of gas environment on the photoluminescence intensity was investigated. A change of ambient gas composition leads to a rather significant change in the intensity of the photoluminescence spectrum and its deformation. The most significant changes in the photoluminescent spectrum were observed for mixed ZnO/TiO2 nanopowders. This obviously is the result of a redistribution of existing centers of luminescence and the appearance of new adsorption centers of luminescence on the surface of nanopowders. The investigated nanopowders can be effectively used as sensing materials for the construction of the multi-component photoluminescent sensing matrix.

  12. Effect of gamma irradiation on the photoluminescence of porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Elistratova, M. A., E-mail: Marina.Elistratova@mail.ioffe.ru; Romanov, N. M. [Peter the Great St. Petersburg Polytechnic University (Russian Federation); Goryachev, D. N. [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Zakharova, I. B. [Peter the Great St. Petersburg Polytechnic University (Russian Federation); Sreseli, O. M. [Russian Academy of Sciences, Ioffe Institute (Russian Federation)

    2017-04-15

    The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the last irradiation are recorded. The quenching of photoluminescence at low irradiation doses and recovery after further irradiation are registered. It is found that porous silicon is strongly oxidized after gamma irradiation and the oxidation process continues for several days after irradiation. It is conceived that the change in the photoluminescence spectra and intensity of porous silicon after gamma irradiation is caused by a change in the passivation type of the porous surface: instead of hydrogen passivation, more stable oxygen passivation is observed. To stabilize the photoluminescence spectra of porous silicon, the use of fullerenes is proposed. No considerable changes in the photoluminescence spectra during irradiation and up to 18 days after irradiation are detected in a porous silicon sample with a thermally deposited fullerene layer. It is shown that porous silicon samples with a deposited C{sub 60} layer are stable to gamma irradiation and oxidation.

  13. Ultraviolet spectrophotometry of three LINERs

    Science.gov (United States)

    Goodrich, R. W.; Keel, W. C.

    1986-01-01

    Three galaxies known to be LINERs were observed spectroscopically in the ultraviolet in an attempt to detect the presumed nonthermal continuum source thought to be the source of photoionization in the nuclei. NGC 4501 was found to be too faint for study with the IUE spectrographs, while NGC 5005 had an extended ultraviolet light profile. Comparison with the optical light profile of NGC 5005 indicates that the ultraviolet source is distributed spatially in the same manner as the optical starlight, probably indicating that the ultraviolet excess is due to a component of hot stars in the nucleus. These stars contribute detectable absorption features longward of 2500 A; together with optical data, the IUE spectra suggest a burst of star formation about 1 billion yr ago, with a lower rate continuing to produce a few OB stars. In NGC 4579, a point source contributing most of the ultraviolet excess is found that is much different than the optical light distribution. Furthermore, the ultraviolet to X-ray spectral index in NGC 4579 is 1.4, compatible with the UV to X-ray indices found for samples of Seyfert galaxies. This provides compelling evidence for the detection of the photoionizing continuum in NGC 4579 and draws the research fields of normal galaxies and active galactic nuclei closer together. The emission-line spectrum of NGC 4579 is compared with calculations from a photoionization code, CLOUDY, and several shock models. The photoionization code is found to give superior results, adding to the increasing weight of evidence that the LINER phenomenon is essentially a scaled-down version of the Seyfert phenomenon.

  14. Fast neutron radiography using photoluminescent imaging plates

    International Nuclear Information System (INIS)

    Rant, J.; Kristof, E.; Balasko, M.; Stade, J.

    1999-01-01

    Fast neutron radiography (FNR) and resonance neutron radiography (RNR) are complementary to the conventional radiography with high energy gamma-rays or brems-strahlung radiation used for the inspection of thick metal objects. In both non-destructive methods, the contrast sensitivity and the penetration power can be improved by using higher energy neutrons. At present direct techniques based either n Solid State Nuclear Track detectors (SSNTDs) or scintillating screens and transfer techniques using activation threshold detectors and radiographic films are applied for the detection of fast neutron images. Rather low detection sensitivity of film and SSNTD based fast neutron imaging methods and also rather poor inherent image contrast of SSNTD pose a problem for FNR in the fast neutron energy region 1-15 MeV interesting for NDT. For more efficient detection of fast neutron images the use of novel highly sensitive photoluminescent imaging plates (IP) in combination with threshold at the KFKI research reactor. The conventional IP produced by FUJI Photo Film Co. for the detection of beta and X-ray radiation were used. The threshold activation detectors were the reactions 115 In(n, n') 115m In, 64 Zn(n,p) 64 Cu, 56 Fe(n, p) 56 Mn, 24 Mg(n, p) 24 Na and 27 Al(n, α) 24 Na. These threshold reactions cover the fast neutron energy region between 0,7 MeV and 12 MeV. Pure, commercially available metals 0,1 mm to 0,25 mm thick made of In, Zn, Fe, Mg and Al were used as converter screens. The very high sensitivity of IP, the linearity of their response over 5 decades of exposure dose and the high dynamic digitalisation latitude enabled fast neutron radiography of image quality comparable to the quality of thermal NR. In our experimental conditions (φ n ∼ 10 8 n/cm 2 s, R Cd ∼ 2) the neutron exposure and IP exposure periods were still practical and comparable to the half life of the corresponding reaction products (half an hour to several hours). Even with the 27 Al(n.α) 24

  15. Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

    International Nuclear Information System (INIS)

    Wang, Q.; Gu, C.Z.; Li, J.J.; Wang, Z.L.; Shi, C.Y.; Xu, P.; Zhu, K.; Liu, Y.L.

    2005-01-01

    Porous silicon (PS) was etched by hydrogen plasma. On the surface a large number of silicon nanocone arrays and nanocrystallites were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced. Correspondingly, three emission centers including red, green, and blue emissions are shown to contribute to the enhanced photoluminescence of the H-etched PS, which originate from the recombination of trapped electrons with free holes due to Si=O bonding at the surface of the silicon nanocrystallites, the quantum size confinement effect, and oxygen vacancy in the surface SiO 2 layer, respectively. In particular, the increase of SiO x (x<2) formed on the surface of the H-etched porous silicon plays a very important role in enhancing the photoluminescence properties

  16. Synthesis and photoluminescence study of rare earth activated phosphor Na2La2B2O7

    International Nuclear Information System (INIS)

    Nagpure, P.A.; Omanwar, S.K.

    2012-01-01

    The photoluminescence properties in UV and N-UV excitable range for the phosphors of Na 2 La 2 B 2 O 7 : RE (RE=Eu, Tb, Ce, Sm, Gd) are investigated. The solution combustion synthesis technique was employed for the synthesis of the phosphors Na 2 La 2 B 2 O 7 : RE. The photoluminescence measurements of the phosphors were carried out on a HITACHI F7000 Fluorescence Spectrophotometer. The PL and PL excitation (PLE) spectra indicate that the main emission wavelength of Na 2 La 2 B 2 O 7 : Eu are 591 and 615 nm, Na 2 La 2 B 2 O 7 : Ce shows dominating emission peak at 387 nm and Na 2 La 2 B 2 O 7 : Tb displays green emission at 493, 544, 593 and 620 nm at 254 nm excitation, while Na 2 La 2 B 2 O 7 : Sm shows the main emission peak wavelengths 566 and 604 nm at 405 nm excitation and Na 2 La 2 B 2 O 7 : Gd shows dominating emission peak at 312 nm at 274 nm excitation. These phosphors may provide a new kind of luminescent materials under ultraviolet and near ultraviolet excitation for various applications. - Highlights: ► We use the combustion technique for synthesis of Na 2 La 2 B 2 O 7 : RE phosphor. ► Phosphor Na 2 La 2 B 2 O 7 : Eu 3+ shows intense red emission under UV excitation. ► Phosphor Na 2 La 2 B 2 O 7 : Tb 3+ shows intense green emission under UV excitation. ► Phosphor Na 2 La 2 B 2 O 7 : Sm 3+ shows orange red emission under near UV excitation. ► Phosphors Na 2 La 2 B 2 O 7 : Ce 3+ and Na 2 La 2 B 2 O 7 : Gd 3+ show near UV and UVB emissions under UV excitation.

  17. Supergraph analysis of the ultraviolet finiteness of gauge supersymmetry

    International Nuclear Information System (INIS)

    Arnowit, R.; Nath, P.

    1979-01-01

    The detailed proof of the ultraviolet finiteness of the S-matrix of gauge supersymmetry for internal symmetry index N >= 2 is presented (where 4N is the number of Fermi coordinates in superspace). The theorem is established to arbitrary loop order in the linearized harmonic gauge when the spontaneous symmetry breaking of gauge supersymmetry preserves global supersymmetry. The asymptotic properties in the deep euclidean region of the tree-approximation propagators are calculated. These enter importantly in the derivation of the theorem. (orig.)

  18. Ultraviolet observations of AM Herculis

    International Nuclear Information System (INIS)

    Tanzi, E.G.; Treves, A.; Milan Univ.; Sandford, M.C.W.; Willis, A.J.; Wilson, R.

    1980-01-01

    Seven ultraviolet spectra (1100-3200 Angstroem) of AM Her were obtained with the low resolution spectrometer of the IUE satellite. Strong emission features appear superimposed on a well defined continuum which is well fitted by a Fsub(lambda) D lambda -2 law. The observations are compared with the expectations from models of the source. (orig.) 891 WL/orig. 892 HIS

  19. Ultraviolet light and cutaneous lupus

    NARCIS (Netherlands)

    Bijl, Marc; Kallenberg, Cees G. M.

    2006-01-01

    Exposure to ultraviolet (UV) light is one of the major factors known to trigger cutaneous disease activity in (systemic) lupus erythematosus patients. UV light, UVB in particular, is a potent inducer of apoptosis. Currently, disturbed clearance of apoptotic cells is one of the concepts explaining

  20. The nature of the photoluminescence in amorphized PZT

    International Nuclear Information System (INIS)

    Silva, M.S.; Cilense, M.; Orhan, E.; Goes, M.S.; Machado, M.A.C.; Santos, L.P.S.; Paiva-Santos, C.O.; Longo, E.; Varela, J.A.; Zaghete, M.A.; Pizani, P.S.

    2005-01-01

    The polymeric precursor method was used to synthesize lead zirconate titanate powder (PZT). The crystalline powder was then amorphized by a high-energy ball milling process during 120 h. A strong photoluminescence emission was observed at room temperature for the amorphized PZT powder. The powders were characterized by XRD and the percentage of amorphous phase was calculated through Rietveld refinement. The microstructure for both phases was investigated by TEM. The optical gap was calculated through the Wood and Tauc method using the UV-Vis. data. Quantum mechanical calculations were carried out to give an interpretation of the photoluminescence in terms of electronic structure

  1. Terahertz-field-induced photoluminescence of nanostructured gold films

    DEFF Research Database (Denmark)

    Iwaszczuk, Krzysztof; Malureanu, Radu; Zalkovskij, Maksim

    2013-01-01

    We experimentally demonstrate photoluminescence from nanostructured ultrathin gold films subjected to strong single-cycle terahertz transients with peak electric field over 300 kV/cm. We show that UV-Vis-NIR light is being generated and the efficiency of the process is strongly enhanced at the pe......We experimentally demonstrate photoluminescence from nanostructured ultrathin gold films subjected to strong single-cycle terahertz transients with peak electric field over 300 kV/cm. We show that UV-Vis-NIR light is being generated and the efficiency of the process is strongly enhanced...

  2. Final LDRD report :ultraviolet water purification systems for rural environments and mobile applications.

    Energy Technology Data Exchange (ETDEWEB)

    Banas, Michael Anthony; Crawford, Mary Hagerott; Ruby, Douglas Scott; Ross, Michael P.; Nelson, Jeffrey Scott; Allerman, Andrew Alan; Boucher, Ray

    2005-11-01

    We present the results of a one year LDRD program that has focused on evaluating the use of newly developed deep ultraviolet LEDs in water purification. We describe our development efforts that have produced an LED-based water exposure set-up and enumerate the advances that have been made in deep UV LED performance throughout the project. The results of E. coli inactivation with 270-295 nm LEDs are presented along with an assessment of the potential for applying deep ultraviolet LED-based water purification to mobile point-of-use applications as well as to rural and international environments where the benefits of photovoltaic-powered systems can be realized.

  3. Room temperature photoluminescence properties of ZnO nanorods grown by hydrothermal reaction

    Energy Technology Data Exchange (ETDEWEB)

    Iwan, S., E-mail: iwan-sugihartono@unj.ac.id [Jurusan Fisika, FMIPA-UNJ, Rawamangun, Jakarta (Indonesia); Prodi Ilmu Material, Departemen Fisika, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Fauzia, Vivi [Prodi Ilmu Material, Departemen Fisika, FMIPA, Universitas Indonesia, Kampus UI Depok (Indonesia); Umar, A. A. [Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, UKM Bangi, Selangor (Malaysia); Sun, X. W. [School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue (Singapore)

    2016-04-19

    Zinc oxide (ZnO) nanorods were fabricated by a hydrothermal reaction on silicon (Si) substrate at 95 °C for 6 hours. The ZnO seed layer was fabricated by depositing ZnO thin films on Si substrates by ultrasonic spray pyrolisis (USP). The annealing effects on crystal structure and optical properties of ZnO nanorods were investigated. The post-annealing treatment was performed at 800 °C with different environments. The annealed of ZnO nanorods were characterized by X-ray diffraction (XRD) and photoluminescence (PL) in order to analyze crystal structure and optical properties, respectively. The results show the orientations of [002], [101], [102], and [103] diffraction peaks were observed and hexagonal wurtzite structure of ZnO nanorods were vertically grown on Si substrates. The room temperature PL spectra show ultra-violet (UV) and visible emissions. The annealed of ZnO nanorods in vacuum condition (3.8 × 10{sup −3} Torr) has dominant UV emission. Meanwhile, non-annealed of ZnO nanorods has dominant visible emission. It was expected that the annealed of ZnO in vacuum condition suppresses the existence of native defects in ZnO nanorods.

  4. Deep Learning

    DEFF Research Database (Denmark)

    Jensen, Morten Bornø; Bahnsen, Chris Holmberg; Nasrollahi, Kamal

    2018-01-01

    I løbet af de sidste 10 år er kunstige neurale netværk gået fra at være en støvet, udstødt tekno-logi til at spille en hovedrolle i udviklingen af kunstig intelligens. Dette fænomen kaldes deep learning og er inspireret af hjernens opbygning.......I løbet af de sidste 10 år er kunstige neurale netværk gået fra at være en støvet, udstødt tekno-logi til at spille en hovedrolle i udviklingen af kunstig intelligens. Dette fænomen kaldes deep learning og er inspireret af hjernens opbygning....

  5. Deep geothermics

    International Nuclear Information System (INIS)

    Anon.

    1995-01-01

    The hot-dry-rocks located at 3-4 km of depth correspond to low permeable rocks carrying a large amount of heat. The extraction of this heat usually requires artificial hydraulic fracturing of the rock to increase its permeability before water injection. Hot-dry-rocks geothermics or deep geothermics is not today a commercial channel but only a scientific and technological research field. The Soultz-sous-Forets site (Northern Alsace, France) is characterized by a 6 degrees per meter geothermal gradient and is used as a natural laboratory for deep geothermal and geological studies in the framework of a European research program. Two boreholes have been drilled up to 3600 m of depth in the highly-fractured granite massif beneath the site. The aim is to create a deep heat exchanger using only the natural fracturing for water transfer. A consortium of german, french and italian industrial companies (Pfalzwerke, Badenwerk, EdF and Enel) has been created for a more active participation to the pilot phase. (J.S.). 1 fig., 2 photos

  6. Plans for the extreme ultraviolet explorer data base

    Science.gov (United States)

    Marshall, Herman L.; Dobson, Carl A.; Malina, Roger F.; Bowyer, Stuart

    1988-01-01

    The paper presents an approach for storage and fast access to data that will be obtained by the Extreme Ultraviolet Explorer (EUVE), a satellite payload scheduled for launch in 1991. The EUVE telescopes will be operated remotely from the EUVE Science Operation Center (SOC) located at the University of California, Berkeley. The EUVE science payload consists of three scanning telescope carrying out an all-sky survey in the 80-800 A spectral region and a Deep Survey/Spectrometer telescope performing a deep survey in the 80-250 A spectral region. Guest Observers will remotely access the EUVE spectrometer database at the SOC. The EUVE database will consist of about 2 X 10 to the 10th bytes of information in a very compact form, very similar to the raw telemetry data. A history file will be built concurrently giving telescope parameters, command history, attitude summaries, engineering summaries, anomalous events, and ephemeris summaries.

  7. Annealing impact on the structural and photoluminescence properties of ZnO thin films on Ag substrates

    International Nuclear Information System (INIS)

    Xu, Linhua; Zheng, Gaige; Lai, Min; Pei, Shixin

    2014-01-01

    Graphical abstract: The Gaussian fitting indicates that the PL spectra of the ZnO thin films include four emission peaks which are centered at 380, 520, 570 and 610 nm, respectively. The ZnO thin film deposited on an Ag substrate shows a stronger green emission and a weaker UV emission than the ZnO thin film directly deposited on a Si substrate annealed at 400 °C. With the rise of annealing temperature, the visible emission intensity and wavelength are largely changed. Highlights: • ZnO thin films have been prepared on Ag substrates by sol–gel method. • The Ag substrates have a great effect on the photoluminescence of ZnO thin films. • All the films exhibit three visible emission bands including green, yellow and red. • Annealing causes a large change of the visible emission intensity and wavelength. -- Abstract: In this work, ZnO thin films were prepared by sol–gel method on Ag substrates. The structural and optical properties of the films annealed at different temperatures were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence, respectively. The results of XRD showed that all the ZnO thin films had a wurtzite phase and were preferentially oriented along the c-axis direction. The sample annealed at 400 °C exhibited better crystalline quality than the ZnO thin film directly deposited on a Si substrate annealed at the same temperature. The photoluminescence spectra showed that ZnO thin films had an ultraviolet emission band and three visible emission bands including green, yellow and red band. The sample annealed at 400 °C exhibited a stronger green emission and a weaker ultraviolet emission compared with the ZnO thin film deposited on a Si substrate annealed at the same temperature. The difference of the luminescence properties was thought to be originated from different substrates. As for the ZnO films on Ag substrates, the increase of annealing temperature led to different changes of visible emissions

  8. Localized surface plasmon enhanced deep UV-emitting of AlGaN based multi-quantum wells by Al nanoparticles on SiO2 dielectric interlayer

    Science.gov (United States)

    He, Ju; Wang, Shuai; Chen, Jingwen; Wu, Feng; Dai, Jiangnan; Long, Hanling; Zhang, Yi; Zhang, Wei; Feng, Zhe Chuan; Zhang, Jun; Du, Shida; Ye, Lei; Chen, Changqing

    2018-05-01

    In this paper, we report a 2.6-fold deep ultraviolet emission enhancement of integrated photoluminescence (PL) intensity in AlGaN-based multi-quantum wells (MQWs) by introducing the coupling of local surface plasmons from Al nanoparticles (NPs) on a SiO2 dielectric interlayer with excitons and photons in MQWs at room temperature. In comparison to bare AlGaN MQWs, a significant 2.3-fold enhancement of the internal quantum efficiency, from 16% to 37%, as well as a 13% enhancement of photon extraction efficiency have been observed in the MQWs decorated with Al NPs on SiO2 dielectric interlayer. Polarization-dependent PL measurement showed that both the transverse electric and transverse magnetic mode were stronger than the original intensity in bare AlGaN MQWs, indicating a strong LSPs coupling process and vigorous scattering ability of the Al/SiO2 composite structure. These results were confirmed by the activation energy of non-radiative recombination from temperature-dependent PL measurement and the theoretical three dimensional finite difference time domain calculations.

  9. Microwave-assisted synthesis and photoluminescence properties of ...

    Indian Academy of Sciences (India)

    2017-11-11

    Nov 11, 2017 ... The photoluminescence property was studied by near-UV (nUV) excitation. The XRD .... spectrofluorimeter equipped with a 450-W Xenon lamp, in the range of .... nUV-excited RGB tricolour LED for production of white light.

  10. Characterization and photoluminescence studies of CdTe ...

    Indian Academy of Sciences (India)

    Administrator

    Abstract. The major objective of this work was to detect the change of photoluminescence (PL) intensity of. CdTe nanoparticles (NPs) before and after transfer from liquid phase to polystyrene (PS) matrix by electro- spinning technique. Thio-stabilized CdTe NPs were first synthesized in aqueous, then enwrapped by cetyl-.

  11. Optical properties and photoluminescence of tetrahexyl-sexithiophene allotropes

    NARCIS (Netherlands)

    Botta, C; Destri, S; Porzio, W; Bongiovanni, G; Loi, MA; Mura, A; Tubino, R

    2001-01-01

    The optical absorption, Raman scattering and photoluminescence of two phases of tetrahexyl-sexithiophene (4HT6) display properties coherently related to the different molecular conformations imposed by the chain packing. We analyse the temperature dependence of the optical properties of a sample in

  12. Tuning photoluminescence of ZnS nanoparticles by silver

    Indian Academy of Sciences (India)

    Wintec

    Ag@ZnS core-shell nanoparticles. ... doped ZnS NPs and thus changes the emission charac- teristics. We also ... Nanoparticles; photoluminescence; silver; zinc sulfide; doping. 1. ..... Sooklal K, Brain S, Angel M and Murphy C J 1996 J. Phys.

  13. Photoluminescence Enhancement in Formamidinium Lead Iodide Thin Films

    NARCIS (Netherlands)

    Fang, Hong-Hua; Wang, Feng; Adjokatse, Sampson; Zhao, Ni; Loi, Maria Antonietta

    2016-01-01

    Formamidinium lead iodide (FAPbI(3)) has a broader absorption spectrum and better thermal stability than the most famous methylammonium lead iodide, thus exhibiting great potential for photovoltaic applications. In this report, the light-induced photoluminescence (PL) evolution in FAPbI(3) thin

  14. Gold nanoparticles–gelatinhybrid fibers with bright photoluminescence

    DEFF Research Database (Denmark)

    Liu, Shuiping; Tan, Lianjiang; Li, Xiaoqiang

    2014-01-01

    acid and gave rise to in situ synthesis of GNPs in the spinning solutions. The GNPs–gelatin fibers were fabricated by electrospinning the spinning solutions. The GNPs were encapsulated in the fibers, which endowed the fibers photoluminescence (PL) characteristics. A variety of experiments were...

  15. Chemical Changes and photoluminescence properties of UV modified polypyrrole

    Czech Academy of Sciences Publication Activity Database

    Galář, P.; Dzurňák, B.; Malý, P.; Čermák, Jan; Kromka, Alexander; Omastová, M.; Rezek, Bohuslav

    2013-01-01

    Roč. 8, č. 1 (2013), s. 57-70 ISSN 1452-3981 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : photoluminescence * polypyrrole * monocrystalline diamond Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.956, year: 2013 http://www.electrochemsci.org/papers/vol8/80100057.pdf

  16. Photoluminescence studies of Li-doped Si nanocrystals

    Czech Academy of Sciences Publication Activity Database

    Klimešová, Eva; Vacík, Jiří; Holý, V.; Pelant, Ivan

    2013-01-01

    Roč. 3, č. 14 (2013), s. 1-7 ISSN 1847-9804 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : Si nanocrystals * photoluminescence * doping * Li-ion batteries Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.949, year: 2013

  17. Photoluminescence of spray pyrolysis deposited ZnO nanorods

    Directory of Open Access Journals (Sweden)

    Mikli Valdek

    2011-01-01

    Full Text Available Abstract Photoluminescence of highly structured ZnO layers comprising well-shaped hexagonal rods is presented. The ZnO rods (length 500-1,000 nm, diameter 100-300 nm were grown in air onto a preheated soda-lime glass (SGL or ITO/SGL substrate by low-cost chemical spray pyrolysis method using zinc chloride precursor solutions and growth temperatures in the range of 450-550°C. We report the effect of the variation in deposition parameters (substrate type, growth temperature, spray rate, solvent type on the photoluminescence properties of the spray-deposited ZnO nanorods. A dominant near band edge (NBE emission is observed at 300 K and at 10 K. High-resolution photoluminescence measurements at 10 K reveal fine structure of the NBE band with the dominant peaks related to the bound exciton transitions. It is found that all studied technological parameters affect the excitonic photoluminescence in ZnO nanorods. PACS: 78.55.Et, 81.15.Rs, 61.46.Km

  18. Unusual photoluminescence phenomena : New insights in Stokes and anti-Stokes emission

    NARCIS (Netherlands)

    de Jong, M.

    2017-01-01

    Photoluminescent materials are applied in many devices that we use in our daily lives. For example in fluorescent lamps and LED-lamps, photoluminescent materials convert the source light to create white light. Photoluminescent materials can also play a role in more complicated devices, as for

  19. Photoluminescence of Sequential Infiltration Synthesized ZnO nanostructures

    Science.gov (United States)

    Ocola, Leonidas; Gosztola, David; Yanguas-Gil, Angel; Connolly, Aine

    We have investigated a variation of atomic layer deposition (ALD), called sequential infiltration synthesis (SiS), as an alternate method to incorporate ZnO and other oxides inside polymethylmethacrylate (PMMA) and other polymers. Energy dispersive spectroscopy (EDS) results show that we synthesize ZnO up to 300 nm inside a PMMA film. Photoluminescence data on a PMMA film shows that we achieve a factor of 400X increase in photoluminescence (PL) intensity when comparing a blank Si sample and a 270 nm thick PMMA film, where both were treated with the same 12 alternating cycles of H2O and diethyl zinc (DEZ). PMMA is a well-known ebeam resist. We can expose and develop patterns useful for photonics or sensing applications first, and then convert them afterwards into a hybrid polymer-oxide material. We show that patterning does indeed affect the photoluminescence signature of native ZnO. We demonstrate we can track the growth of the ZnO inside the PMMA polymer using both photoluminescence and Raman spectroscopy and determine the point in the process where ZnO is first photoluminescent and also at which point ZnO first exhibits long range order in the polymer. This work was supported by the Department of Energy under Contract No. DE-AC02-06CH11357. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

  20. Ultraviolet extensions of particle physics

    DEFF Research Database (Denmark)

    Berthier, Laure Gaëlle

    The discovery of the Higgs boson in 2012 at the Large Hadron Collider completed the Standard Model field content. Many questions though remain unanswered by the Standard Model triggering a search for new physics. New physics could manifest itself at the Large Hadron Collider by the discovery of new...... particles. However, the lack of new resonances might suggest that these new particles are still out of reach which leaves us with few options. Two possibilities are explored in this thesis. The first is to study precision measurements which might indicate new physics as small deviations from the Standard...... are expressed as power series with missing higher order terms. We also show how to connect ultraviolet models of new physics to the Standard Model effective field theory and calculate bounds on them using the Standard Model effective field theory fit results. Finally, we study a nonrelativistic ultraviolet...

  1. Dynamics of the deep red Fe3+ photoluminescence emission in feldspar

    DEFF Research Database (Denmark)

    Prasad, Amit Kumar; Jain, Mayank

    2018-01-01

    be exploited for site discrimination within a complex feldspar sample. The radiative relaxation in Fe3+ (4T1 → 6A1) is shown to be a dynamic process depending on whether the ion is excited using resonant or non-resonant transition. We suggest that during resonant excitation, the excited state of Fe3+ undergoes...

  2. Deep smarts.

    Science.gov (United States)

    Leonard, Dorothy; Swap, Walter

    2004-09-01

    When a person sizes up a complex situation and rapidly comes to a decision that proves to be not just good but brilliant, you think, "That was smart." After you watch him do this a few times, you realize you're in the presence of something special. It's not raw brainpower, though that helps. It's not emotional intelligence, either, though that, too, is often involved. It's deep smarts. Deep smarts are not philosophical--they're not"wisdom" in that sense, but they're as close to wisdom as business gets. You see them in the manager who understands when and how to move into a new international market, in the executive who knows just what kind of talk to give when her organization is in crisis, in the technician who can track a product failure back to an interaction between independently produced elements. These are people whose knowledge would be hard to purchase on the open market. Their insight is based on know-how more than on know-what; it comprises a system view as well as expertise in individual areas. Because deep smarts are experienced based and often context specific, they can't be produced overnight or readily imported into an organization. It takes years for an individual to develop them--and no time at all for an organization to lose them when a valued veteran walks out the door. They can be taught, however, with the right techniques. Drawing on their forthcoming book Deep Smarts, Dorothy Leonard and Walter Swap say the best way to transfer such expertise to novices--and, on a larger scale, to make individual knowledge institutional--isn't through PowerPoint slides, a Web site of best practices, online training, project reports, or lectures. Rather, the sage needs to teach the neophyte individually how to draw wisdom from experience. Companies have to be willing to dedicate time and effort to such extensive training, but the investment more than pays for itself.

  3. Nanograin boundaries and silicon carbide photoluminescence

    Directory of Open Access Journals (Sweden)

    S.I. Vlaskina

    2017-10-01

    Full Text Available The luminescence spectra of SiC crystals and films with grain boundaries (GB on the atomic level were observed. The GB spectra are associated with luminescence centers localized in areas of specific structural abnormalities in the crystal, without no reference to the one-dimensional layer-disordering. The zero-phonon part of GB spectra is always within the same energy range (2.890…2.945 eV and does not fit in the dependence of its position in the energy scale on the percent of hexagonality as in the case of stacking faults (SFi and deep level (DLi spectra. The zero-phonon part 2.945…2.890 eV with a fine structure is better observed in crystals with the centers of origin growth of crystal, if ND – NA ~ (2…8•1016 cm–3, ND ~ (2…7•1017 cm–3. The edge phonons of the Brillouin zone TA-46 meV, LA-77 meV, TO-95 meV and LO-104 meV are involved in development of the GB spectrum. This spectrum may occur simultaneously with the DLi and SFi ones. The GB spectra also occur after high temperature processing the β-phase (in the 3C-SiC with appearance of the α-phase. The temperature range of observation is 4.2…40 K. There is synchronous thermal quenching of all elements in the fine structure. The thermal activation energy of quenching is ЕаТ ~ 7 meV.

  4. Anomalous lattice vibrations of monolayer MoS 2 probed by ultraviolet Raman scattering

    KAUST Repository

    Liu, Hsiang Lin; Guo, Huaihong; Yang, Teng; Zhang, Zhidong; Kumamoto, Yasuaki; Shen, Chih Chiang; Hsu, Yu Te; Li, Lain-Jong; Saito, Riichiro; Kawata, Satoshi

    2015-01-01

    We present a comprehensive Raman scattering study of monolayer MoS2 with increasing laser excitation energies ranging from the near-infrared to the deep-ultraviolet. The Raman scattering intensities from the second-order phonon modes are revealed to be enhanced anomalously by only the ultraviolet excitation wavelength 354 nm. We demonstrate theoretically that such resonant behavior arises from a strong optical absorption that forms near the Γ point and of the band structure and an inter-valley resonant electronic scattering by the M-point phonons. These results advance our understanding of the double resonance Raman scattering process in low-dimensional semiconducting nanomaterials and provide a foundation for the technological development of monolayer MoS2 in the ultraviolet frequency range. © the Owner Societies 2015.

  5. Rhodamine 6G impregnated porous silica: A photoluminescence study

    Energy Technology Data Exchange (ETDEWEB)

    Anedda, A. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Canada) (Italy); Carbonaro, C.M. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Canada) (Italy)]. E-mail: cm.carbonaro@dsf.unica.it; Clemente, F. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy); Corpino, R. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy); Ricci, P.C. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy); Rossini, S. [Dipartimento di Fisica, Universita degli Studi di Cagliari and INMF UdR Cagliari, SP no8, Km 0700, 09042, Monserrato (Ca) (Italy)

    2005-12-15

    The optical properties of rhodamine 6G dye confined in porous silica are reported. Photoluminescence properties of embedded chromophores in mesoporous hosts can be affected by the surrounding matrices: shifts in emission spectra and variations of photoluminescence quantum yield are found as compared to dye solutions. Host-guest interactions are studied here by varying both SiO{sub 2} xerogels porosity and the dye concentration. Comparing samples obtained by impregnating matrices with 5.4 and 18.2 nm pores with solutions having concentrations in the rhodamine 6G high laser gain, matrices with 5.4 nm pores impregnated with a dye concentration of 5 x 10{sup -4} M are found to be the most stable and efficient in the examined range.

  6. UV-VIS and photoluminescence spectroscopy for nanomaterials characterization

    CERN Document Server

    2013-01-01

    Second volume of a 40-volume series on nanoscience and nanotechnology, edited by the renowned scientist Challa S.S.R. Kumar. This handbook gives a comprehensive overview about UV-visible and photoluminescence spectroscopy for the characterization of nanomaterials. Modern applications and state-of-the-art techniques are covered and make this volume essential reading for research scientists in academia and industry in the related fields.

  7. Photoluminescent polysaccharide-coated germanium(IV) oxide nanoparticles

    Czech Academy of Sciences Publication Activity Database

    Lobaz, Volodymyr; Rabyk, Mariia; Pánek, Jiří; Doris, E.; Nallet, F.; Štěpánek, Petr; Hrubý, Martin

    2016-01-01

    Roč. 294, č. 7 (2016), s. 1225-1235 ISSN 0303-402X R&D Projects: GA MŠk(CZ) 7AMB14FR027; GA ČR(CZ) GA13-08336S; GA MZd(CZ) NV15-25781A Institutional support: RVO:61389013 Keywords : germanium oxide nanoparticles * polysaccharide coating * photoluminescent label Subject RIV: CD - Macromolecular Chemistry Impact factor: 1.723, year: 2016

  8. Power-law photoluminescence decay in quantum dots

    Czech Academy of Sciences Publication Activity Database

    Král, Karel; Menšík, Miroslav

    2013-01-01

    Roč. 5, č. 6 (2013), s. 608-610 ISSN 2164-6627 R&D Projects: GA MŠk(CZ) OC10007; GA MŠk LH12236; GA MŠk LH12186 Institutional support: RVO:68378271 ; RVO:61389013 Keywords : quantum dots * indirect gap * photoluminescence * electron-phonon interaction * non-adiabatic Subject RIV: BM - Solid Matter Physics ; Magnetism; JA - Electronics ; Optoelectronics, Electrical Engineering (UMCH-V)

  9. Photoluminescence of monovalent indium centres in phosphate glass

    OpenAIRE

    Masai, Hirokazu; Yamada, Yasuhiro; Okumura, Shun; Yanagida, Takayuki; Fujimoto, Yutaka; Kanemitsu, Yoshihiko; Ina, Toshiaki

    2015-01-01

    Valence control of polyvalent cations is important for functionalization of various kinds of materials. Indium oxides have been used in various applications, such as indium tin oxide in transparent electrical conduction films. However, although metastable In+ (5 s2 configuration) species exhibit photoluminescence (PL), they have attracted little attention. Valence control of In+ cations in these materials will be important for further functionalization. Here, we describe In+ species using PL ...

  10. Ultraviolet divergences and supersymmetric theories

    International Nuclear Information System (INIS)

    Sagnotti, A.

    1984-09-01

    This article is closely related to the one by Ferrara in these same Proceedings. It deals with what is perhaps the most fascinating property of supersymmetric theories, their improved ultraviolet behavior. My aim here is to present a survey of the state of the art as of August, 1984, and a somewhat more detailed discussion of the breakdown of the superspace power-counting beyond N = 2 superfields. A method is also described for simplifying divergence calculations that uses the locality of subtracted Feynman integrals. 74 references

  11. Ultraviolet disinfection of potable water

    Energy Technology Data Exchange (ETDEWEB)

    Wolfe, R. L. [Metropolitan Water District of Southern California, Los Angeles, CA (United States)

    1990-06-15

    Because of upcoming surface and groundwater regulations regarding the control of microbiological and chemical contaminants, there is a need to evaluate the feasibility and effectiveness of ultraviolet (UV) radiation for primary disinfection of potable water supplies. Data is presented on microbicidal wavelengths of UV and distribution of energy output for low and medium-pressure arc lamps. Both systems were found to perform equally well for inactivating microorganisms, but each had distinct advantages in different applications. Approximate dosages for 90% inactivation of selected microorganisms by UV is presented in a table. Cost analysis for disinfection is presented in two tables as well as the advantages and disadvantages of UV disinfection.

  12. Ultraviolet disinfection of potable water

    International Nuclear Information System (INIS)

    Wolfe, R.L.

    1990-01-01

    Because of upcoming surface and groundwater regulations regarding the control of microbiological and chemical contaminants, there is a need to evaluate the feasibility and effectiveness of ultraviolet (UV) radiation for primary disinfection of potable water supplies. Data is presented on microbicidal wavelengths of UV and distribution of energy output for low and medium-pressure arc lamps. Both systems were found to perform equally well for inactivating microorganisms, but each had distinct advantages in different applications. Approximate dosages for 90% inactivation of selected microorganisms by UV is presented in a table. Cost analysis for disinfection is presented in two tables as well as the advantages and disadvantages of UV disinfection

  13. Ultraviolet divergences of Einstein gravity

    International Nuclear Information System (INIS)

    Goroff, M.H.

    1986-01-01

    The author discuss a two-loop calculation showing that the S matrix of Einstein's theory of gravity contains nonrenormalizable ultraviolet divergences in four dimension. The author discusses the calculation in both background field and normal field theory. The author describes a new method for dealing with ghost fields in gauge theories by combining them with suitable extensions of the gauge fields in higher dimensions. The author shows how using subtracted integrals in the calculation of higher loop graphs simplifies the calculation in the background field method by eliminating the need for mixed counterterms. Finally, the author makes some remarks about the implications of the result for supergravity theories

  14. Ultraviolet laser technology and applications

    CERN Document Server

    Elliott, David L

    1995-01-01

    Ultraviolet Laser Technology and Applications is a hands-on reference text that identifies the main areas of UV laser technology; describes how each is applied; offers clearly illustrated examples of UV opticalsystems applications; and includes technical data on optics, lasers, materials, and systems. This book is unique for its comprehensive, in-depth coverage. Each chapter deals with a different aspect of the subject, beginning with UV light itself; moving through the optics, sources, and systems; and concluding with detailed descriptions of applications in various fields.The text enables pr

  15. Photoluminescence decay kinetics of doped ZnS nanophosphors

    International Nuclear Information System (INIS)

    Sharma, Rajesh; Bhatti, H S

    2007-01-01

    Doped nanophosphor samples of ZnS:Mn, ZnS:Mn, Co and ZnS:Mn, Fe were prepared using a chemical precipitation method. Photoluminescence (PL) spectra were obtained and lifetime studies of the nanophosphors were carried out at room temperature. To the best of our knowledge, there are very few reports on the photoluminescence investigations of Co-doped or Fe-doped ZnS:Mn nanoparticles in the literature. Furthermore, there is no report on luminescence lifetime shortening of ZnS:Mn nanoparticles doped with Co or Fe impurity. Experimental results showed that there is considerable change in the photoluminescence spectra of ZnS:Mn nanoparticles doped with X (X = Co, Fe). The PL spectra of the ZnS:Mn, Co nanoparticle sample show three peaks at 410, 432 and 594 nm, while in the case of the ZnS:Mn, Fe nanoparticle sample the peaks are considerably different. The lifetimes are found to be in microsecond time domain for 594 nm emission, while nanosecond order lifetimes are obtained for 432 and 411 nm emission in ZnS:Mn, X nanophosphor samples. These lifetimes suggest a new additional decay channel of the carrier in the host material

  16. Deep UV LEDs

    Science.gov (United States)

    Han, Jung; Amano, Hiroshi; Schowalter, Leo

    2014-06-01

    Deep ultraviolet (DUV) photons interact strongly with a broad range of chemical and biological molecules; compact DUV light sources could enable a wide range of applications in chemi/bio-sensing, sterilization, agriculture, and industrial curing. The much shorter wavelength also results in useful characteristics related to optical diffraction (for lithography) and scattering (non-line-of-sight communication). The family of III-N (AlGaInN) compound semiconductors offers a tunable energy gap from infrared to DUV. While InGaN-based blue light emitters have been the primary focus for the obvious application of solid state lighting, there is a growing interest in the development of efficient UV and DUV light-emitting devices. In the past few years we have witnessed an increasing investment from both government and industry sectors to further the state of DUV light-emitting devices. The contributions in Semiconductor Science and Technology 's special issue on DUV devices provide an up-to-date snapshot covering many relevant topics in this field. Given the expected importance of bulk AlN substrate in DUV technology, we are pleased to include a review article by Hartmann et al on the growth of AlN bulk crystal by physical vapour transport. The issue of polarization field within the deep ultraviolet LEDs is examined in the article by Braut et al. Several commercial companies provide useful updates in their development of DUV emitters, including Nichia (Fujioka et al ), Nitride Semiconductors (Muramoto et al ) and Sensor Electronic Technology (Shatalov et al ). We believe these articles will provide an excellent overview of the state of technology. The growth of AlGaN heterostructures by molecular beam epitaxy, in contrast to the common organo-metallic vapour phase epitaxy, is discussed by Ivanov et al. Since hexagonal boron nitride (BN) has received much attention as both a UV and a two-dimensional electronic material, we believe it serves readers well to include the

  17. Dose modeling in ultraviolet phototherapy

    International Nuclear Information System (INIS)

    Grimes, David Robert; Robbins, Chris; O'Hare, Neil John

    2010-01-01

    Purpose: Ultraviolet phototherapy is widely used in the treatment of numerous skin conditions. This treatment is well established and largely beneficial to patients on both physical and psychological levels; however, overexposure to ultraviolet radiation (UVR) can have detrimental effects, such as erythemal responses and ocular damage in addition to the potentially carcinogenic nature of UVR. For these reasons, it is essential to control and quantify the radiation dose incident upon the patient to ensure that it is both biologically effective and has the minimal possible impact on the surrounding unaffected tissue. Methods: To date, there has been little work on dose modeling, and the output of artificial UVR sources is an area where research has been recommended. This work characterizes these sources by formalizing an approach from first principles and experimentally examining this model. Results: An implementation of a line source model is found to give impressive accuracy and quantifies the output radiation well. Conclusions: This method could potentially serve as a basis for a full computational dose model for quantifying patient dose.

  18. Evolution of solar ultraviolet luminosity

    International Nuclear Information System (INIS)

    Zahnle, K.J.; Walker, J.C.G.

    1982-01-01

    In view of the major role of the sun in defining the properties of planetary atmospheres, their evolution cannot be fully understood outside the context of an evolving sun. The ultraviolet radiation is especially interesting because of its strong interaction with planetary atmospheres. We use astronomical observation of stars that are analogous to the sun in order to reconstruct a tentative account of the evolution of solar UV luminosity. A wealth of evidence indicates that the young sun was a much more powerful source of energetic particles and radiation than it is today. While on the main sequence, solar activity has declined as an inverse power law of age (between t -5 and t/sup -1.2/) as a consequence of angular momentum loss to the solar wind. Recent IUE satellite observations of premain sequence stars suggest that before the sun reached the main sequence (at an age of about 50 m.y.), it may have emitted as much as 10 4 times as much ultraviolet radiation (γ<2000 A) than it does today. These results could impact our understanding of the photochemistry and escape of constituents of primordial planetary atmospheres

  19. Preparation, photoluminescent properties and luminescent dynamics of BaAlF5:Eu2+ nanophosphors

    International Nuclear Information System (INIS)

    Zhang, Wei; Hua, Ruinian; Liu, Tianqing; Zhao, Jun; Na, Liyan; Chen, Baojiu

    2014-01-01

    Graphical abstract: Rice-shaped BaAlF 5 :Eu 2+ nanophosphors were synthesized via one-pot hydrothermal process. The as-prepared BaAlF 5 :Eu 2+ are composed of many particles with an average diameter of 40 nm. When excited at 260 nm, the sharp line emission located at 361 nm of Eu 2+ was observed. The optimum doping concentration of Eu 2+ was confirmed to be 5 mol%. The strong ultraviolet emission of Eu 2+ ions in BaAlF 5 :Eu 2+ nanoparticles suggests that these nanoparticles may have potential applications for sensing, solid-state lasers and spectrometer calibration. - Highlights: • BaAlF 5 :Eu 2+ nanophosphors were synthesized via a mild hydrothermal process. • The Van and Huang models were used to research the mechanism of concentration quenching. • The optimum doping concentration of Eu2+ was confirmed to be 5 mol%. - Abstract: Eu 2+ -doped BaAlF 5 nanophosphors were synthesized via a facile one-pot hydrothermal method. The final products were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and photoluminescence (PL) spectroscopy. XRD results showed that the prepared samples are single-phase. The FE-SEM and TEM images indicated that the prepared BaAlF 5 :Eu 2+ nanophosphors are composed of many rice-shaped particles with an average diameter of 40 nm. When excited at 260 nm, BaAlF 5 :Eu 2+ nanophosphors exhibit the sharp line emissions of Eu 2+ at room temperature. The optimum doping concentration of Eu 2+ was confirmed to be 5 mol%. The Van and Huang models were used to study the mechanism of concentration quenching and the electric dipole–dipole interaction between Eu 2+ can be deduced to be a dominant for quenching fluorescence in BaAlF 5 :Eu 2+ nanophosphors. The strong ultraviolet emission of Eu 2+ in BaAlF 5 :Eu 2+ nanophosphors suggests that these nanoparticles may have potential applications for sensing, spectrometer calibration and solid-state lasers

  20. Solar ultraviolet radiation effects on biological systems

    International Nuclear Information System (INIS)

    Diffey, B.L.

    1991-01-01

    This extensive review discusses the topic under the following headings: ultraviolet climatology, molecular and cellular ultraviolet photobiology (absorption, photoproducts, repair), effects of solar UVR on aquatic life (phyto and zooplankton), plants and humans. The section on human effects includes tanning, photo-aging, non-melanoma and melanoma skin cancers and the effects of solar UVR on the eye. (UK)

  1. Solar ultraviolet radiation effects on biological systems

    Energy Technology Data Exchange (ETDEWEB)

    Diffey, B.L. (Dryburn Hospital, Durham (UK). Regional Medical Physics Dept.)

    1991-03-01

    This extensive review discusses the topic under the following headings: ultraviolet climatology, molecular and cellular ultraviolet photobiology (absorption, photoproducts, repair), effects of solar UVR on aquatic life (phyto and zooplankton), plants and humans. The section on human effects includes tanning, photo-aging, non-melanoma and melanoma skin cancers and the effects of solar UVR on the eye. (UK).

  2. ASASSN-15LH: A SUPERLUMINOUS ULTRAVIOLET REBRIGHTENING OBSERVED BY SWIFT AND HUBBLE

    Energy Technology Data Exchange (ETDEWEB)

    Brown, Peter J.; Yang, Yi; Wang, Lifan [George P. and Cynthia Woods Mitchell Institute for Fundamental Physics and Astronomy, Texas A. and M. University, Department of Physics and Astronomy, 4242 TAMU, College Station, TX 77843 (United States); Cooke, Jeff; Mould, Jeremy [Centre for Astrophysics and Supercomputing, Swinburne University, Hawthorn VIC 3122 (Australia); Olaes, Melanie; Quimby, Robert M. [Department of Astronomy, San Diego State University, San Diego, CA 92182 (United States); Baade, Dietrich [European Organisation for Astronomical Research in the Southern Hemisphere (ESO), Karl-Schwarzschild-Str. 2, D-85748 Garching b. München (Germany); Gehrels, Neil [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Hoeflich, Peter [Department of Physics, Florida State University, Tallahassee, FL 32306 (United States); Maund, Justyn [Department of Physics and Astronomy F39 Hicks Building, Hounsfield Road Sheffield, S3 7RH (United Kingdom); Wheeler, J. Craig [Department of Astronomy, University of Texas at Austin, Austin, TX 78712 (United States)

    2016-09-01

    We present and discuss ultraviolet and optical photometry from the Ultraviolet/Optical Telescope, X-ray limits from the X-Ray Telescope on Swift, and imaging polarimetry and ultraviolet/optical spectroscopy with the Hubble Space Telescope , all from observations of ASASSN-15lh. It has been classified as a hydrogen-poor superluminous supernova (SLSN I), making it more luminous than any other supernova observed. ASASSN-15lh is not detected in the X-rays in individual or co-added observations. From the polarimetry we determine that the explosion was only mildly asymmetric. We find the flux of ASASSN-15lh to increase strongly into the ultraviolet, with an ultraviolet luminosity 100 times greater than the hydrogen-rich, ultraviolet-bright SLSN II SN 2008es. We find that objects as bright as ASASSN-15lh are easily detectable beyond redshifts of ∼4 with the single-visit depths planned for the Large Synoptic Survey Telescope. Deep near-infrared surveys could detect such objects past a redshift of ∼20, enabling a probe of the earliest star formation. A late rebrightening—most prominent at shorter wavelengths—is seen about two months after the peak brightness, which is itself as bright as an SLSN. The ultraviolet spectra during the rebrightening are dominated by the continuum without the broad absorption or emission lines seen in SLSNe or tidal disruption events (TDEs) and the early optical spectra of ASASSN-15lh. Our spectra show no strong hydrogen emission, showing only Ly α absorption near the redshift previously found by optical absorption lines of the presumed host. The properties of ASASSN-15lh are extreme when compared to either SLSNe or TDEs.

  3. Synthesis and photoluminescence of Ca-(Sn,Ti)-Si-O compounds

    International Nuclear Information System (INIS)

    Abe, Shunsuke; Yamane, Hisanori; Yoshida, Hisashi

    2010-01-01

    The phase relation of the compounds prepared in the CaO-SnO 2 -SiO 2 system at 1673 K and in the CaO-TiO 2 -SiO 2 system at 1573 K was investigated in order to explore new Ti 4+ -activated stannate phosphors. Solid solutions of Ca(Sn 1-x Ti x )SiO 5 and Ca 3 (Sn 1-y Ti y )Si 2 O 9 were synthesized at x = 0-1.0 and y = 0-0.10, respectively, and their crystal structures were analyzed by powder X-ray diffraction. Photoluminescence of these solid solutions was observed in a broad range of a visible light wavelength region under ultraviolet (UV) light excitation. The peaks of the emission band of Ca(Sn 0.97 Ti 0.03 )SiO 5 and Ca 3 (Sn 0.925 Ti 0.075 )Si 2 O 9 were at 510 nm under excitation of 252 nm and at 534 nm under excitation of 258 nm, respectively. The absorption edges estimated by the diffuse reflectance spectra were at 300 nm (4.1 eV) for CaSnSiO 5 and at 270 nm (4.6 eV) for Ca 3 SnSi 2 O 9 , suggesting that the excitation levels in Ca(Sn 1-x Ti x )SiO 5 were above the band gap of the host, although the levels in Ca 3 (Sn 1-y Ti y )Si 2 O 9 were within the band gap and near the conduction band edge.

  4. Effects of stabilizer ratio on photoluminescence properties of sol-gel ZnO nano-structured thin films

    International Nuclear Information System (INIS)

    Boudjouan, F.; Chelouche, A.; Touam, T.; Djouadi, D.; Khodja, S.; Tazerout, M.; Ouerdane, Y.; Hadjoub, Z.

    2015-01-01

    Nanostructured ZnO thin films with different molar ratios of MEA to zinc acetate (0.5, 1.0, 1.5 and 2.0) have been deposited on glass substrates by a sol–gel dip coating technique. X-ray diffraction, Scanning Electron Microscopy, UV–visible spectrophotometry and photoluminescence spectroscopy have been employed to investigate the effect of MEA stabilizer ratio on structural, morphological, absorbance and emission properties of the ZnO thin films. Diffraction patterns have shown that all the films are polycrystalline and exhibit a wurtzite hexagonal structure. The c axis orientation has been enhanced with increasing stabilizer ratio. SEM micrographs have revealed that the morphology of the ZnO films depend on stabilizer ratio. The UV–visible absorption spectra have demonstrated that the optical absorption is affected by stabilizer ratio. The photoluminescence spectra have indicated one ultraviolet and two visible emission bands (green and red), while band intensities are found to be dependent on stabilizer ratio. ZnO thin films deposited at MEA ratio of 1.0 show the highest UV emission while the minimum UV emission intensity is observed in thin films deposited at ratio of 0.5 and the maximum green has been recorded for films deposited at MEA ratio of 2.0. - Highlight: • c axis orientation increases with increasing MEA ratio. • The increase of MEA ration from 0.5 to 1.0 enhances greatly the UV emission. • The larger I UV /I visible is obtained for the MEA to Zn ratio of 1:1. • The MEA ratio of 0.5 favors the formation of large density of V zn . • The MEA ratio of 2.0 increases the V o density

  5. Improved photoluminescence properties of a new green SrB2O4:Tb3+ phosphor by charge compensation

    International Nuclear Information System (INIS)

    Wu, Zhan-Chao; Wang, Ping; Liu, Jie; Li, Chao; Zhou, Wen-Hui; Kuang, Shao-Ping

    2012-01-01

    Highlights: ► New green-emitting SrB 2 O 4 :Tb 3+ phosphor was synthesized by solid-state reaction. ► Li + , Na + , and K + can all increase luminescent intensity of SrB 2 O 4 :Tb 3+ . ► Na + is the optimal charge compensator among Li + , Na + and K + . ► SrB 2 O 4 :Tb 3+ is a promising green phosphor for fabricating WLED. -- Abstract: A new green-emitting SrB 2 O 4 :Tb 3+ phosphor was synthesized by solid-state reaction. X-ray powder diffraction (XRD) analysis confirmed all the samples with orthorhombic formation of SrB 2 O 4 . The excitation spectra indicate the phosphor can be effectively excited by near ultraviolet (NUV) light, making it attractive as conversion phosphor for LED applications. The phosphor exhibits a bright green emission with the highest photoluminescence (PL) intensity at 544 nm excited by 378 nm light. The critical quenching concentration of Tb 3+ in SrB 2 O 4 :Tb 3+ is about 10 mol%. The effects of charge compensators (Li + , Na + , and K + ) on photoluminescence of SrB 2 O 4 :Tb 3+ were also studied. The results show that the emission intensity can be improved by all the three charge compensators and Na + is the optimal one for SrB 2 O 4 :Tb 3+ . All properties show that the phosphor is a promising green phosphor pumped by NUV InGaN chip for fabricating white light-emitting diodes (WLEDs).

  6. Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes

    International Nuclear Information System (INIS)

    Zhang Qi; Zhang Hao; Xu Tao; Wei Bin; Zhang Xiao-Wen

    2015-01-01

    We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes (UV OLEDs) using different heterojunction structures. It is found that an energy barrier of over 0.3 eV between the emissive layer (EML) and adjacent transport layer facilitates exciplex formation. The electron blocking layer effectively confines electrons in the EML, which contributes to pure UV emission and enhances efficiency. The change in EML thickness generates tunable UV emission from 376 nm to 406 nm. In addition, the UV emission excites low-energy organic function layers and produces photoluminescent emission. In UV OLED, avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency. A maximum external quantum efficiency of 1.2% with a UV emission peak of 376 nm is realized. (paper)

  7. Evolution of Oxygen Deficiency Center on Fused Silica Surface Irradiated by Ultraviolet Laser and Posttreatment

    Directory of Open Access Journals (Sweden)

    Hai-Bing Lü

    2014-01-01

    Full Text Available Evolution of oxygen deficiency centers (ODCs on a fused silica surface irradiated using a 355 nm ultraviolet (UV laser beam in both vacuum and atmospheric conditions was quantitatively studied using photoluminescence and X-ray photoelectron spectroscopy. When the fusedsilica surface was exposed to the UV laser in vacuum, the laser damage threshold was decreased whereas the concentration of the ODCs was increased. For the fuse silica operated under the high power lasers, creation of ODCs on their surface resulted from the UV laser irradiation, and this is more severe in a high vacuum. The laser fluence and/or laser intensity have significant effects on the increase of the ODCs concentration. The ODCs can be effectively repaired using postoxygen plasma treatment and UV laser irradiation in an excessive oxygen environment. Results also demonstrated that the “gain” and “loss” of oxygen at the silica surface is a reversible and dynamic process.

  8. Ultraviolet safety assessments of insect light traps.

    Science.gov (United States)

    Sliney, David H; Gilbert, David W; Lyon, Terry

    2016-01-01

    Near-ultraviolet (UV-A: 315-400 nm), "black-light," electric lamps were invented in 1935 and ultraviolet insect light traps (ILTs) were introduced for use in agriculture around that time. Today ILTs are used indoors in several industries and in food-service as well as in outdoor settings. With recent interest in photobiological lamp safety, safety standards are being developed to test for potentially hazardous ultraviolet emissions. A variety of UV "Black-light" ILTs were measured at a range of distances to assess potential exposures. Realistic time-weighted human exposures are shown to be well below current guidelines for human exposure to ultraviolet radiation. These UV-A exposures would be far less than the typical UV-A exposure in the outdoor environment. Proposals are made for realistic ultraviolet safety standards for ILT products.

  9. Tuning of deep level emission in highly oriented electrodeposited ZnO nanorods by post growth annealing treatments

    International Nuclear Information System (INIS)

    Simimol, A.; Manikandanath, N. T.; Chowdhury, Prasanta; Barshilia, Harish C.; Anappara, Aji A.

    2014-01-01

    Highly dense and c-axis oriented zinc oxide (ZnO) nanorods with hexagonal wurtzite facets were deposited on fluorine doped tin oxide coated glass substrates by a simple and cost-effective electrodeposition method at low bath temperature (80 °C). The as-grown samples were then annealed at various temperatures (T A  = 100–500 °C) in different environments (e.g., zinc, oxygen, air, and vacuum) to understand their photoluminescence (PL) behavior in the ultra-violet (UV) and the visible regions. The PL results revealed that the as-deposited ZnO nanorods consisted of oxygen vacancy (V O ), zinc interstitial (Zn i ), and oxygen interstitial (O i ) defects and these can be reduced significantly by annealing in different environments at optimal annealing temperatures. However, the intensity of deep level emission increased for T A greater than the optimized values for the respective environments due to the introduction of various defect centers. For example, for T A  ≥ 450 °C in the oxygen and air environments, the density of O i defects increased, whereas, the green emission associated with V O is dominant in the vacuum annealed (T A  = 500 °C) ZnO nanorods. The UV peak red shifted after the post-growth annealing treatments in all the environments and the vacuum annealed sample exhibited highest UV peak intensity. The observations from the PL data are supported by the micro-Raman spectroscopy. The present study gives new insight into the origin of different defects that exist in the electrodeposited ZnO nanorods and how these defects can be precisely controlled in order to get the desired emissions for the opto-electronic applications

  10. The Ultraviolet Albedo of Ganymede

    Science.gov (United States)

    McGrath, Melissa; Hendrix, A.

    2013-10-01

    A large set of ultraviolet images of Ganymede have been acquired with the Hubble Space Telescope over the last 15 years. These images have been used almost exclusively to study Ganymede’s stunning auroral emissions (Feldman et al. 2000; Eviatar et al. 2001; McGrath et al. 2004; Saur et al. 2011; McGrath et al. 2013), and even the most basic information about Ganymede’s UV albedo has yet to be gleaned from these data. We will present a first-cut analysis of both disk-averaged and spatially-resolved UV albedos of Ganymede, with focus on the spatially-resolved Lyman-alpha albedo, which has never been considered previously for this satellite. Ganymede's visibly bright regions are known to be rich in water ice, while the visibly dark regions seem to be more carbonaceous (Carlson et al., 1996). At Lyman-alpha, these two species should also have very different albedo values. References Carlson, R. and 39 co-authors, Near-infrared spectroscopy and spectral mapping of Jupiter and the Galilean satellites: Results from Galileo’s initial orbit, Science, 274, 385-388, 1996. Eviatar, A., D. F. Strobel, B. C. Wolven, P. D. Feldman, M. A. McGrath, and D. J. Williams, Excitation of the Ganymede ultraviolet aurora, Astrophys. J, 555, 1013-1019, 2001. Feldman, P. D., M. A. McGrath, D. F. Strobel, H. W. Moos, K. D. Retherford, and B. C. Wolven, HST/STIS imaging of ultraviolet aurora on Ganymede, Astrophys. J, 535, 1085-1090, 2000. McGrath M. A., Lellouch E., Strobel D. F., Feldman P. D., Johnson R. E., Satellite Atmospheres, Chapter 19 in Jupiter: The Planet, Satellites and Magnetosphere, ed. F. Bagenal, T. Dowling, W. McKinnon, Cambridge University Press, 2004. McGrath M. A., Jia, Xianzhe; Retherford, Kurt; Feldman, Paul D.; Strobel, Darrell F.; Saur, Joachim, Aurora on Ganymede, J. Geophys. Res., doi: 10.1002/jgra.50122, 2013. Saur, J., S. Duling, S., L. Roth, P. D. Feldman, D. F. Strobel, K. D. Retherford, M. A. McGrath, A. Wennmacher, American Geophysical Union, Fall Meeting

  11. Hand protection from ultraviolet exposure

    International Nuclear Information System (INIS)

    Khazova, M.; O'Hagan, J.B.

    2006-01-01

    Full text of publication follows: A number of industrial applications and public services involve exposure to ultraviolet radiation (U.V.R.) from a variety of lamps and lasers, for example, in forensic examination, biological trans-illuminators, dentistry, laser material processing, microelectronics, etc. The proposed European Union Directive on Optical Radiation would place specific requirements on employers to provide adequate safety measures to reduce exposure to U.V.R., including gloves for hand protection. The selection of gloves should be based on a risk assessment and on the performance characteristics of the gloves for the task. However, current International and national standards do not describe evaluation procedures of disposable gloves for hand protection against non-ionising radiation. A methodology for assessment of the UV protection level for disposable gloves and a simple measurement protocol are proposed, based on a common approach with UV protection by clothing and sunscreens. Glove Ultraviolet Protection Factor is defined as a time-scale increase in exposure permitted for the hand protected by a glove with respect to an unprotected hand. However, the wide variety of U.V.R. sources and the real-life conditions of glove use (stretching and wetting the surface by liquids) bring substantial challenges to the assessment method. Our study of ∼ 50 samples of widely used disposable gloves made of different materials (nitrile, vinyl, latex and chloroprene) showed that for all tested gloves a change in U.V.R. attenuation with stretching is characteristic for the type of glove material and can be included as a scaling factor in the definition of U.V.R. protection. Glove material has a bigger effect on U.V.R. protection level than variations in the glove thickness or its colour. The following approaches are suggested to overcome the problem of variable U.V.R. sources: - Worst case scenario minimal protection level, most restrictive case - Application

  12. Hand protection from ultraviolet exposure

    Energy Technology Data Exchange (ETDEWEB)

    Khazova, M.; O' Hagan, J.B. [Health Protection Agency, Radiation Protection Division, Chilton, Did cot (United Kingdom)

    2006-07-01

    Full text of publication follows: A number of industrial applications and public services involve exposure to ultraviolet radiation (U.V.R.) from a variety of lamps and lasers, for example, in forensic examination, biological trans-illuminators, dentistry, laser material processing, microelectronics, etc. The proposed European Union Directive on Optical Radiation would place specific requirements on employers to provide adequate safety measures to reduce exposure to U.V.R., including gloves for hand protection. The selection of gloves should be based on a risk assessment and on the performance characteristics of the gloves for the task. However, current International and national standards do not describe evaluation procedures of disposable gloves for hand protection against non-ionising radiation. A methodology for assessment of the UV protection level for disposable gloves and a simple measurement protocol are proposed, based on a common approach with UV protection by clothing and sunscreens. Glove Ultraviolet Protection Factor is defined as a time-scale increase in exposure permitted for the hand protected by a glove with respect to an unprotected hand. However, the wide variety of U.V.R. sources and the real-life conditions of glove use (stretching and wetting the surface by liquids) bring substantial challenges to the assessment method. Our study of {approx} 50 samples of widely used disposable gloves made of different materials (nitrile, vinyl, latex and chloroprene) showed that for all tested gloves a change in U.V.R. attenuation with stretching is characteristic for the type of glove material and can be included as a scaling factor in the definition of U.V.R. protection. Glove material has a bigger effect on U.V.R. protection level than variations in the glove thickness or its colour. The following approaches are suggested to overcome the problem of variable U.V.R. sources: - Worst case scenario minimal protection level, most restrictive case - Application

  13. DeepPy: Pythonic deep learning

    DEFF Research Database (Denmark)

    Larsen, Anders Boesen Lindbo

    This technical report introduces DeepPy – a deep learning framework built on top of NumPy with GPU acceleration. DeepPy bridges the gap between highperformance neural networks and the ease of development from Python/NumPy. Users with a background in scientific computing in Python will quickly...... be able to understand and change the DeepPy codebase as it is mainly implemented using high-level NumPy primitives. Moreover, DeepPy supports complex network architectures by letting the user compose mathematical expressions as directed graphs. The latest version is available at http...

  14. Photoluminescence of epitactical and polycrystalline CuInS2 layers for thin-film solar cells

    International Nuclear Information System (INIS)

    Eberhardt, J.

    2007-01-01

    The present thesis deals with one- and polycrystalline CuInS 2 absorber layers for thin-film solar cells and especially with their optical and structural characterization. By means of detailed temperature- and power-dependent photoluminescence measurements in epitactical and polycrystalline absorber layers different radiative transitions could be analyzed and identified. The spectra were dominated by broad luminescence bands of deep perturbing levels. The implantation of hydrogen at low energies led to a passivation of these perturbing levels. On the base of the optical studies on epitactical and polycrystalline absorber layers a new improved defect model for CuInS 2 could be developed. The model contains two donor and two acceptor levels with following ionization energies: D-1=46 meV, D-2=87 meV, A-1=70 meV, and A-2=119 meV

  15. Galactic Astronomy in the Ultraviolet

    Science.gov (United States)

    Rastorguev, A. S.; Sachkov, M. E.; Zabolotskikh, M. V.

    2017-12-01

    We propose a number of prospective observational programs for the ultraviolet space observatory WSO-UV, which seem to be of great importance to modern galactic astronomy. The programs include the search for binary Cepheids; the search and detailed photometric study and the analysis of radial distribution of UV-bright stars in globular clusters ("blue stragglers", blue horizontal-branch stars, RR Lyrae variables, white dwarfs, and stars with UV excesses); the investigation of stellar content and kinematics of young open clusters and associations; the study of spectral energy distribution in hot stars, including calculation of the extinction curves in the UV, optical and NIR; and accurate definition of the relations between the UV-colors and effective temperature. The high angular resolution of the observatory allows accurate astrometric measurements of stellar proper motions and their kinematic analysis.

  16. Additive effects of ultraviolet radiation

    International Nuclear Information System (INIS)

    Cullen, A.P.

    1980-01-01

    A xenon-mercury high pressure lamp and a double monochromator were used to produce ultraviolet (uv) radiation at 295 nm. Pigmented rabbit eyes were irradiated and evaluated by slitlamp biomicroscopy. Corneal threshold (Hc) was 0.05 J.cm-2 and lens threshold (hL) was 0.75 J.cm-2. Other eyes were irradiated with 2 Hc and evaluated from 4 to 24 h at 4 h intervals. Corneal damage was only greater than that expected from a single Hc exposure if the separation between the two Hc exposures did not exceed 8 h. The most repeatable and reliable corneal response to these levels of uv was the development of corneal epithelial granules

  17. Ultraviolet Spectrophotometry of VV Cephei

    Directory of Open Access Journals (Sweden)

    Young Woon Kang

    1992-06-01

    Full Text Available The IUE archival spectra of VV Cephei were collected to investigate the eclipse nature in the ultraviolet. The temperature of the B star has been determined, as approximately 30000K, based on the flux distributions during egress. Light curves of VV Cephei were reduced from the spectrophotometry of the IUE archival spectra. Three light curves at the center wavelengths of 3250 Å, 2550 Å and 2850 Å have been analyzed by the modified Wilson and Devinney light curve program. The radii of the B star and M star were deduced to 0.05 and 0.22 of unit separation, respectively. The UV light curves show an evidence that the light was attenuated by the highly opaque atomsphere of the M star.

  18. Ultraviolet, Visible, and Fluorescence Spectroscopy

    Science.gov (United States)

    Penner, Michael H.

    Spectroscopy in the ultraviolet-visible (UV-Vis) range is one of the most commonly encountered laboratory techniques in food analysis. Diverse examples, such as the quantification of macrocomponents (total carbohydrate by the phenol-sulfuric acid method), quantification of microcomponents, (thiamin by the thiochrome fluorometric procedure), estimates of rancidity (lipid oxidation status by the thiobarbituric acid test), and surveillance testing (enzyme-linked immunoassays), are presented in this text. In each of these cases, the analytical signal for which the assay is based is either the emission or absorption of radiation in the UV-Vis range. This signal may be inherent in the analyte, such as the absorbance of radiation in the visible range by pigments, or a result of a chemical reaction involving the analyte, such as the colorimetric copper-based Lowry method for the analysis of soluble protein.

  19. Temperature- and excitation intensity-dependent photoluminescence in TlInSeS single crystals

    International Nuclear Information System (INIS)

    Gasanly, N M; Aydinli, A; Yuksek, N S

    2002-01-01

    Photoluminescence (PL) spectra of TlInSeS layered single crystals were investigated in the wavelength region 460-800 nm and in the temperature range 10-65 K. We observed one wide PL band centred at 584 nm (2.122 eV) at T=10 K and an excitation intensity of 7.5 W cm -2 . We have also studied the variation of the PL intensity versus excitation laser intensity in the range from 0.023 to 7.5 W cm -2 . The red shift of this band with increasing temperature and blue shift with increasing laser excitation intensity was observed. The PL was found to be due to radiative transitions from the moderately deep donor level located at 0.243 eV below the bottom of the conduction band to the shallow acceptor level at 0.023 eV located above the top of the valence band. The proposed energy-level diagram permits us to interpret the recombination processes in TlInSeS layered single crystals

  20. Temperature- and excitation intensity-dependent photoluminescence in TlInSeS single crystals

    CERN Document Server

    Gasanly, N M; Yuksek, N S

    2002-01-01

    Photoluminescence (PL) spectra of TlInSeS layered single crystals were investigated in the wavelength region 460-800 nm and in the temperature range 10-65 K. We observed one wide PL band centred at 584 nm (2.122 eV) at T=10 K and an excitation intensity of 7.5 W cm sup - sup 2. We have also studied the variation of the PL intensity versus excitation laser intensity in the range from 0.023 to 7.5 W cm sup - sup 2. The red shift of this band with increasing temperature and blue shift with increasing laser excitation intensity was observed. The PL was found to be due to radiative transitions from the moderately deep donor level located at 0.243 eV below the bottom of the conduction band to the shallow acceptor level at 0.023 eV located above the top of the valence band. The proposed energy-level diagram permits us to interpret the recombination processes in TlInSeS layered single crystals.

  1. Visualizing Carrier Transport in Metal Halide Perovskite Nanoplates via Electric Field Modulated Photoluminescence Imaging.

    Science.gov (United States)

    Hu, Xuelu; Wang, Xiao; Fan, Peng; Li, Yunyun; Zhang, Xuehong; Liu, Qingbo; Zheng, Weihao; Xu, Gengzhao; Wang, Xiaoxia; Zhu, Xiaoli; Pan, Anlian

    2018-05-09

    Metal halide perovskite nanostructures have recently been the focus of intense research due to their exceptional optoelectronic properties and potential applications in integrated photonics devices. Charge transport in perovskite nanostructure is a crucial process that defines efficiency of optoelectronic devices but still requires a deep understanding. Herein, we report the study of the charge transport, particularly the drift of minority carrier in both all-inorganic CsPbBr 3 and organic-inorganic hybrid CH 3 NH 3 PbBr 3 perovskite nanoplates by electric field modulated photoluminescence (PL) imaging. Bias voltage dependent elongated PL emission patterns were observed due to the carrier drift at external electric fields. By fitting the drift length as a function of electric field, we obtained the carrier mobility of about 28 cm 2 V -1 S -1 in the CsPbBr 3 perovskite nanoplate. The result is consistent with the spatially resolved PL dynamics measurement, confirming the feasibility of the method. Furthermore, the electric field modulated PL imaging is successfully applied to the study of temperature-dependent carrier mobility in CsPbBr 3 nanoplates. This work not only offers insights for the mobile carrier in metal halide perovskite nanostructures, which is essential for optimizing device design and performance prediction, but also provides a novel and simple method to investigate charge transport in many other optoelectronic materials.

  2. Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition

    Science.gov (United States)

    Barbagiovanni, E. G.; Strano, V.; Franzò, G.; Crupi, I.; Mirabella, S.

    2015-03-01

    Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (Vo) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two Vo states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient, indicating a clear role of atmospheric O2 on the surface defect states. A model for surface defect transient behaviour due to band bending with respect to the Fermi level is proposed. The results have implications for a variety of sensing and photovoltaic applications of ZnO NRs.

  3. Semiconductor color-center structure and excitation spectra: Equation-of-motion coupled-cluster description of vacancy and transition-metal defect photoluminescence

    Science.gov (United States)

    Lutz, Jesse J.; Duan, Xiaofeng F.; Burggraf, Larry W.

    2018-03-01

    Valence excitation spectra are computed for deep-center silicon-vacancy defects in 3C, 4H, and 6H silicon carbide (SiC), and comparisons are made with literature photoluminescence measurements. Optimizations of nuclear geometries surrounding the defect centers are performed within a Gaussian basis-set framework using many-body perturbation theory or density functional theory (DFT) methods, with computational expenses minimized by a QM/MM technique called SIMOMM. Vertical excitation energies are subsequently obtained by applying excitation-energy, electron-attached, and ionized equation-of-motion coupled-cluster (EOMCC) methods, where appropriate, as well as time-dependent (TD) DFT, to small models including only a few atoms adjacent to the defect center. We consider the relative quality of various EOMCC and TD-DFT methods for (i) energy-ordering potential ground states differing incrementally in charge and multiplicity, (ii) accurately reproducing experimentally measured photoluminescence peaks, and (iii) energy-ordering defects of different types occurring within a given polytype. The extensibility of this approach to transition-metal defects is also tested by applying it to silicon-substituted chromium defects in SiC and comparing with measurements. It is demonstrated that, when used in conjunction with SIMOMM-optimized geometries, EOMCC-based methods can provide a reliable prediction of the ground-state charge and multiplicity, while also giving a quantitative description of the photoluminescence spectra, accurate to within 0.1 eV of measurement for all cases considered.

  4. Photoluminescence of Eu{sup 2+}-doped CaMgSi{sub 2x}O{sub 6+2x} (1.00{<=}x{<=}1.20) phosphors in UV-VUV region

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Zhiya [Department of Materials Science, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Wang Yuhua [Department of Materials Science, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China)], E-mail: wyh@lzu.edu.cn

    2008-03-15

    Alkaline-earth silicate phosphors CaMgSi{sub 2x}O{sub 6+2x}:Eu{sup 2+} (1.00{<=}x{<=}1.20) were prepared by traditional solid-state reaction. The phosphors showed an intense blue emission centered around 453 nm, with both 254 and 147 nm excitations. The host absorption below 200 nm in the excitation spectra consisted of two bands around 160 and 190 nm. The band around 160 nm was ascertained to be associated with the SiO{sub 4}-tetrahedra and MgO{sub 6}-polyhedra, and that around 190 nm was due to the CaO{sub 8}-polyhedra or some impurities. The incorporation of excess Si of less than 15% would not lead to formation of impurities and the results indicated that an appropriate Si excess could improve the Photoluminescence (PL) intensity in both ultraviolet (UV) and vacuum ultraviolet (VUV) regions.

  5. Photoluminescence of Eu2+-doped CaMgSi2xO6+2x (1.00≤x≤1.20) phosphors in UV-VUV region

    International Nuclear Information System (INIS)

    Zhang Zhiya; Wang Yuhua

    2008-01-01

    Alkaline-earth silicate phosphors CaMgSi 2x O 6+2x :Eu 2+ (1.00≤x≤1.20) were prepared by traditional solid-state reaction. The phosphors showed an intense blue emission centered around 453 nm, with both 254 and 147 nm excitations. The host absorption below 200 nm in the excitation spectra consisted of two bands around 160 and 190 nm. The band around 160 nm was ascertained to be associated with the SiO 4 -tetrahedra and MgO 6 -polyhedra, and that around 190 nm was due to the CaO 8 -polyhedra or some impurities. The incorporation of excess Si of less than 15% would not lead to formation of impurities and the results indicated that an appropriate Si excess could improve the Photoluminescence (PL) intensity in both ultraviolet (UV) and vacuum ultraviolet (VUV) regions

  6. Visible photoluminescence from hydrogenated silicon particles suspended in a silane plasma

    International Nuclear Information System (INIS)

    Courteille, C.; Dorier, J.L.; Dutta, J.; Hollenstein, C.; Howling, A.A.; Stoto, T.

    1994-09-01

    Visible photoluminescence at room temperature has been observed in amorphous hydrogenated silicon particulates during their formation in a silane radio-frequency plasma. Oxygen injection along with mass spectrometry measurements demonstrate that oxygen has no influence on the photoluminescence. The appearance of visible photoluminescence coincides with a particle agglomeration phase as shown by laser light scattering experiments, and electron microscopy shows silicon nanocrystals within these particulates. These observations of visible photoluminescence are consistent with the model of quantum confinement in the silicon nanocrystals. (author) 5 figs., 45 refs

  7. Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles.

    Science.gov (United States)

    Iqbal, Azhar; Beech, Jason P; Anttu, Nicklas; Pistol, Mats-Erik; Samuelson, Lars; Borgström, Magnus T; Yartsev, Arkady

    2013-03-22

    We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using TE-polarized excitation at a wavelength of 488 nm at an incident angle of ∼70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ∼1.35 eV and ∼1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ∼20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.

  8. Ultraviolet Extinction in Backlit Galaxies - from Galaxy Zoo to GALEX

    Science.gov (United States)

    Keel, William C.; Manning, A.; Holwerda, B. W.; Lintott, C.; Schawinski, K.; Galaxy Zoo Team

    2012-01-01

    We examine the ultraviolet extinction of galaxies on large scales, combining optical and GALEX UV data on backlit galaxies (most found in the Galaxy Zoo citizen-science project). We analyze the images in matching ways, modelling both foreground and background galaxies by symmetry or elliptical isophote families as appropriate, and using the non-overlapping regions of the galaxies to estimate errors in the derived transmission T=e-κ. Spirals appear less symmetric in the UV, as star-forming regions become more dominant, so that our most reliable results are mean values across multiple regions and multiple galaxies. Our mean effective extinction curve is dominated by the contribution of luminous spirals,and shows a fairly flat gray" extinction law into the ultraviolet. For example, the median of κNUV/κB in spiral arms is only 1.3. Along with previous high-resolution HST studies of a few nearby backlit galaxies, this suggests that on kpc scales the effective extinction is dominated by the dust clumping rather than the intrinsic reddening law. This implies that extrapolation of local properties to short wavelengths, a step toward the history of dust in galaxies through comparison of local properties with a similar analysis in deep HST fields, can be done without introducing much additional error. This work was supported by NASA Astrophysics Data Analysis Program grant NNX10AD54G.

  9. Photoluminescence properties of Co-doped ZnO nanocrystals

    DEFF Research Database (Denmark)

    Lommens, P.; Smet, P.F.; De Mello Donega, C.

    2006-01-01

    We performed photoluminescence experiments on colloidal, Co -doped ZnO nanocrystals in order to study the electronic properties of Co in a ZnO host. Room temperature measurements showed, next to the ZnO exciton and trap emission, an additional emission related to the Co dopant. The spectral...... position and width of this emission does not depend on particle size or Co concentration. At 8 K, a series of ZnO bulk phonon replicas appear on the Co-emission band. We conclude that Co ions are strongly localized in the ZnO host, making the formation of a Co d-band unlikely. Magnetic measurements...

  10. Photoluminescence intermittency of semiconductor quantum dots in dielectric environments

    Energy Technology Data Exchange (ETDEWEB)

    Isaac, A.

    2006-08-11

    The experimental studies presented in this thesis deal with the photoluminescence intermittency of semiconductor quantum dots in different dielectric environments. Detailed analysis of intermittency statistics from single capped CdSe/ZnS, uncapped CdSe and water dispersed CdSe/ZnS QDs in different matrices provide experimental evidence for the model of photoionization with a charge ejected into the surrounding matrix as the source of PL intermittency phenomenon. We propose a self-trapping model to explain the increase of dark state lifetimes with the dielectric constant of the matrix. (orig.)

  11. Photoluminescence of Mg_2Si films fabricated by magnetron sputtering

    International Nuclear Information System (INIS)

    Liao, Yang-Fang; Xie, Quan; Xiao, Qing-Quan; Chen, Qian; Fan, Meng-Hui; Xie, Jing; Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di

    2017-01-01

    Highlights: • High quality Mg_2Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg_2Si films was reported. • The Mg_2Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg_2Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg_2Si-based light-emitting devices, Mg_2Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg_2Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg_2Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg_2Si film on Si (111) displays polycrystalline structure, whereas Mg_2Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg_2Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg_2Si films was observed for the first time. The PL emission wavelengths of Mg_2Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg_2Si films on glass substrate is much larger than that of Mg_2Si film on Si (111) substrate. The activation energy of 18 meV is

  12. Photoconductance-calibrated photoluminescence lifetime imaging of crystalline silicon

    International Nuclear Information System (INIS)

    Herlufsen, Sandra; Schmidt, Jan; Hinken, David; Bothe, Karsten; Brendel, Rolf

    2008-01-01

    We use photoluminescence (PL) measurements by a silicon charge-coupled device camera to generate high-resolution lifetime images of multicrystalline silicon wafers. Absolute values of the excess carrier density are determined by calibrating the PL image by means of contactless photoconductance measurements. The photoconductance setup is integrated in the camera-based PL setup and therefore identical measurement conditions are realised. We demonstrate the validity of this method by comparison with microwave-detected photoconductance decay measurements. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2008], Wiley Periodicals, Inc.)

  13. Photoluminescence efficiency in AlGaN quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Tamulaitis, G.; Mickevičius, J. [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Jurkevičius, J., E-mail: jonas.jurkevicius@ff.vu.lt [Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio av. 9-III, Vilnius LT-10222 (Lithuania); Shur, M.S. [Department of ECE and CIE, Rensselaer Polytechnic Institute (United States); Shatalov, M.; Yang, J.; Gaska, R. [Sensor Electronic Technology, Inc. (United States)

    2014-11-15

    Photoluminescence spectroscopy of AlGaN/AlGaN multiple quantum wells under quasi-steady-state conditions in the temperature range from 8 to 300 K revealed a strong dependence of droop onset threshold on temperature that was explained by the influence of carrier delocalization. The delocalization at room temperature results predominantly in enhancement of bimolecular radiative recombination, while being favorable for enhancement of nonradiative recombination at low temperatures. Studies of stimulated emission confirmed the strong influence of carrier localization on droop.

  14. The photoluminescence of Co-Al-layered double hydroxide

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    We report a new optical behaviour of pure Co-Al-layered double hydroxide (LDH). It was found that the Co-Al-LDH sample could emit fluorescence without any fluorescent substances intercalated. Its excitation spectrum shows a maximum peak near the wavelength 370 nm, the maximum emission peak appears at 430 nm and the photoluminescence colour of the Co-Al-LDH sample is blue. This new optical property will be expected to extend the potential applications of LDHs in optical materials field.

  15. Lensless Photoluminescence Hyperspectral Camera Employing Random Speckle Patterns.

    Czech Academy of Sciences Publication Activity Database

    Žídek, Karel; Denk, Ondřej; Hlubuček, Jiří

    2017-01-01

    Roč. 7, č. 1 (2017), č. článku 15309. ISSN 2045-2322 R&D Projects: GA MŠk(CZ) LO1206; GA ČR(CZ) GJ17-26284Y Institutional support: RVO:61389021 Keywords : compressed sensing * photoluminescence imaging * laser speckles * single-pixel camera Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 4.259, year: 2016 https://www.nature.com/articles/s41598-017-14443-4

  16. Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

    International Nuclear Information System (INIS)

    Prtljaga, Nikola; D'Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo

    2011-01-01

    Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

  17. Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

    Science.gov (United States)

    Prtljaga, Nikola; D'Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo

    2011-05-01

    Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

  18. Photoluminescence of hydrophilic silicon nanocrystals in aqueous solutions

    Energy Technology Data Exchange (ETDEWEB)

    Prtljaga, Nikola; D' Amato, Elvira; Pitanti, Alessandro; Guider, Romain; Froner, Elena; Larcheri, Silvia; Scarpa, Marina; Pavesi, Lorenzo, E-mail: nikolap@science.unitn.it [Department of Physics, University of Trento, Via Sommarive 14, I-38123 Trento (Italy)

    2011-05-27

    Stable aqueous solutions of undecylenic-acid-grafted silicon nanocrystals (Si-nc) were prepared. The time evolution of the photoluminescence properties of these hydrophilic silicon nanocrystals has been followed on different timescales (hours and days). On a short timescale (hours), Si-nc tend to agglomerate while the PL lineshape and intensity are stable. Agglomeration can be reduced by using suitable surfactants. On a long timescale (days), oxidation of Si-nc occurs even in the presence of surfactants. These two observations render Si-nc very useful as a labeling agent for biosensing.

  19. Photoluminescence excitation measurements using pressure-tuned laser diodes

    Science.gov (United States)

    Bercha, Artem; Ivonyak, Yurii; Medryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

    2015-06-01

    Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available.

  20. Photoluminescence excitation measurements using pressure-tuned laser diodes

    International Nuclear Information System (INIS)

    Bercha, Artem; Ivonyak, Yurii; Mędryk, Radosław; Trzeciakowski, Witold A.; Dybała, Filip; Piechal, Bernard

    2015-01-01

    Pressure-tuned laser diodes in external cavity were used as tunable sources for photoluminescence excitation (PLE) spectroscopy. The method was demonstrated in the 720 nm-1070 nm spectral range using a few commercial laser diodes. The samples for PLE measurements were quantum-well structures grown on GaAs and on InP. The method is superior to standard PLE measurements using titanium sapphire laser because it can be extended to any spectral range where anti-reflection coated laser diodes are available

  1. Power-law photoluminescence decay in indirect gap quantum dots

    Czech Academy of Sciences Publication Activity Database

    Menšík, Miroslav; Král, Karel

    2013-01-01

    Roč. 111, November (2013), s. 170-174 ISSN 0167-9317 R&D Projects: GA MŠk(CZ) OC10007; GA MŠk LH12186; GA MŠk LH12236; GA ČR(CZ) GAP205/10/2280 Institutional support: RVO:61389013 ; RVO:68378271 Keywords : quantum dots * indirect gap transition * power-law photoluminescence decay Subject RIV: BM - Solid Matter Physics ; Magnetism; BE - Theoretical Physics (FZU-D) Impact factor: 1.338, year: 2013

  2. Photoluminescence studies of single InGaAs quantum dots

    DEFF Research Database (Denmark)

    Leosson, Kristjan; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1999-01-01

    Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots...... to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence...... on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice....

  3. Optical characterization of semiconductors infrared, Raman, and photoluminescence spectroscopy

    CERN Document Server

    Perkowitz, Sidney

    1993-01-01

    This is the first book to explain, illustrate, and compare the most widely used methods in optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non-experts in mind, the book develops the background needed to understand the why and how of each technique, but does not require special knowledge of semiconductors or optics. Each method is illustrated with numerous case studies. Practical information drawn from the authors experience is given to help establish optical facilities, including commercial sources for equipment, and experimental details. For industrial sci

  4. Microscopic modeling of photoluminescence of strongly disordered semiconductors

    International Nuclear Information System (INIS)

    Bozsoki, P.; Kira, M.; Hoyer, W.; Meier, T.; Varga, I.; Thomas, P.; Koch, S.W.

    2007-01-01

    A microscopic theory for the luminescence of ordered semiconductors is modified to describe photoluminescence of strongly disordered semiconductors. The approach includes both diagonal disorder and the many-body Coulomb interaction. As a case study, the light emission of a correlated plasma is investigated numerically for a one-dimensional two-band tight-binding model. The band structure of the underlying ordered system is assumed to correspond to either a direct or an indirect semiconductor. In particular, luminescence and absorption spectra are computed for various levels of disorder and sample temperature to determine thermodynamic relations, the Stokes shift, and the radiative lifetime distribution

  5. Photoluminescence of Copper-Doped Lithium Niobate Crystals

    Science.gov (United States)

    Gorelik, V. S.; Pyatyshev, A. Yu.; Sidorov, N. V.

    2018-05-01

    The photoluminescence (PL) of copper-doped lithium niobate single crystals is studied using different UV-Vis light-emitting diodes and a pulse-periodic laser with a wavelength of 266 nm as excitation radiation sources. With the resonance excitation from a 527-nm light-emitting diode, the intensity of PL increases sharply (by two orders of magnitude). When using a 467-nm light-emitting diode for excitation, the PL spectrum is characterized by the presence of multiphonon lines in the range of 520-620 nm.

  6. Synthesis and photoluminescence of Eu3+ and Mn2+ doped double phosphates KMLa(PO4)2 (M = Zn, Mg)

    International Nuclear Information System (INIS)

    Pan Yuexiao; Zhang Qinyuan; Jiang Zhonghong

    2006-01-01

    Two compounds, KMgLa(PO 4 ) 2 and KZnLa(PO 4 ) 2 doped with Eu 3+ and Mn 2+ ions, have been synthesized by a conventional solid-state method at 850 deg. C. Structures of KMgLa(PO 4 ) 2 and KZnLa(PO 4 ) 2 have been investigated and confirmed by X-ray diffraction and photoluminescence spectra. The results indicate that the compounds have remained the monoclinic structure of LaPO 4 with space group of C s when (K + , Mg 2+ ) or (K + , Zn 2+ ) could substitute half of the La 3+ ions. Under an ultraviolet source, KMgLa(PO 4 ) 2 :Mn 2+ has shown a bright red phosphorescent color, while KZnLa(PO 4 ) 2 :Mn 2+ has shown an orange-red emission which is assigned to the electronic transition of 4 T 1 ( 4 G)- 6 A 1 ( 6 S) of Mn 2+ in strong crystal field

  7. Stratospheric ozone, ultraviolet radiation and climate change

    International Nuclear Information System (INIS)

    Boucher, O.

    2008-01-01

    It is well known that an overexposure to ultraviolet radiation is associated with a number of health risks such as an increased risk of cataracts and skin cancers. At a time when climate change is often blamed for all our environmental problems, what is the latest news about the stratospheric ozone layer and other factors controlling ultraviolet radiation at the surface of the Earth? Will the expected changes in the chemical composition of the atmosphere and changes in our climate increase or decrease the risk for skin cancer? This article investigates the role of the various factors influencing ultraviolet radiation and presents the latest knowledge on the subject. (author)

  8. Ultraviolet safety assessments of insect light traps

    OpenAIRE

    Sliney, David H.; Gilbert, David W.; Lyon, Terry

    2016-01-01

    ABSTRACT Near-ultraviolet (UV-A: 315?400?nm), ?black-light,? electric lamps were invented in 1935 and ultraviolet insect light traps (ILTs) were introduced for use in agriculture around that time. Today ILTs are used indoors in several industries and in food-service as well as in outdoor settings. With recent interest in photobiological lamp safety, safety standards are being developed to test for potentially hazardous ultraviolet emissions. A variety of UV ?Black-light? ILTs were measured at...

  9. Some aspects of vacuum ultraviolet radiation physics

    CERN Document Server

    Damany, Nicole; Vodar, Boris

    2013-01-01

    Some Aspects of Vacuum Ultraviolet Radiation Physics presents some data on the state of research in vacuum ultraviolet radiation in association with areas of physics. Organized into four parts, this book begins by elucidating the optical properties of solids in the vacuum ultraviolet region (v.u.v.), particularly the specific methods of determination of optical constants in v.u.v., the properties of metals, and those of ionic insulators. Part II deals with molecular spectroscopy, with emphasis on the spectra of diatomic and simple polyatomic molecules, paraffins, and condensed phases. Part III

  10. Stimulation of hair cells with ultraviolet light

    Science.gov (United States)

    Azimzadeh, Julien B.; Fabella, Brian A.; Hudspeth, A. J.

    2018-05-01

    Hair bundles are specialized organelles that transduce mechanical inputs into electrical outputs. To activate hair cells, physiologists have resorted to mechanical methods of hair-bundle stimulation. Here we describe a new method of hair-bundle stimulation, irradiation with ultraviolet light. A hair bundle illuminated by ultraviolet light rapidly moves towards its tall edge, a motion typically associated with excitatory stimulation. The motion disappears upon tip-link rupture and is associated with the opening of mechanotransduction channels. Hair bundles can be induced to move sinusoidally with oscillatory modulation of the stimulation power. We discuss the implications of ultraviolet stimulation as a novel hair-bundle stimulus.

  11. Greedy Deep Dictionary Learning

    OpenAIRE

    Tariyal, Snigdha; Majumdar, Angshul; Singh, Richa; Vatsa, Mayank

    2016-01-01

    In this work we propose a new deep learning tool called deep dictionary learning. Multi-level dictionaries are learnt in a greedy fashion, one layer at a time. This requires solving a simple (shallow) dictionary learning problem, the solution to this is well known. We apply the proposed technique on some benchmark deep learning datasets. We compare our results with other deep learning tools like stacked autoencoder and deep belief network; and state of the art supervised dictionary learning t...

  12. UV and visible photoluminescence emission intensity of undoped and In-doped ZnO thin film and photoresponsivity of ZnO:In/Si hetero-junction

    Energy Technology Data Exchange (ETDEWEB)

    Zebbar, N., E-mail: nacbar2003@yahoo.fr [LCMS, Faculty of Physics, University of Sciences and Technology (USTHB), BP 32, El-Alia, Algiers (Algeria); Chabane, L. [LCMS, Faculty of Physics, University of Sciences and Technology (USTHB), BP 32, El-Alia, Algiers (Algeria); Gabouze, N. [CRTSE, 02 Bd. Frantz Fanon, BP 140, Algiers (Algeria); Kechouane, M. [LCMS, Faculty of Physics, University of Sciences and Technology (USTHB), BP 32, El-Alia, Algiers (Algeria); Trari, M. [Laboratory of Storage and Valorization of Renewable Energies, Faculty of Chemistry (USTHB), BP 32, El-Alia, Algiers (Algeria); Aida, M.S. [LCM et Interface, Faculty of Sciences, University of Constantine, 25000 (Algeria); Belhousse, S. [CRTSE, 02 Bd. Frantz Fanon, BP 140, Algiers (Algeria); Hadj Larbi, F. [MEMS & Sensors, Division Microélectronique et Nanotechnologie, Centre de Développement des Technologies Avancées (CDTA), BP 17, Baba Hassen, Algiers (Algeria)

    2016-04-30

    Undoped zinc oxide (ZnO) and indium-doped (ZnO:In) thin films were grown at different temperatures (250–400 °C) on alkali-free borosilicate glass and n-Si (100) substrates by Ultrasonic Spray Pyrolysis method. The structural, compositional, optical and electrical properties of ZnO films were investigated by X-ray diffraction, Scanning Electron Microscopy, Rutherford Back Scattering Spectroscopy, Fourier Transform Infrared spectroscopy, photoluminescence (PL) and the four-point probe technique. The predominance of ultraviolet (UV) and blue emission intensities was found to be closely dependent on the resistivity of the film. The visible emission band (peaking at 432 nm) prevails for low film resistivity, ranging from 10{sup −2} to 1 Ω·cm. By contrast, for higher resistivity (> 1 Ω·cm), there is a predominance of the UV band (382 nm). The PL and photoresponsivity results of fabricated ZnO:In/n-Si(100) heterojunctions prepared at different temperatures are discussed. The maximum spectral response of the ZnO:8%In/Si heterojunction diode fabricated at 250 °C was about 80 mA/W at zero bias. The highlighted results are attractive for the optoelectronic applications. - Highlights: • Properties of ZnO thin films grown by Ultrasonic Spray Pyrolysis at 350 °C. • Photoluminescence emission intensity in undoped ZnO film: effect of the resistivity • Photoluminescence emission intensity of In-doped ZnO film is resistivity dependent. • The spectral response of ZnO:In/Si hetero-junction deposited in the range (250–400 °C)

  13. UV and visible photoluminescence emission intensity of undoped and In-doped ZnO thin film and photoresponsivity of ZnO:In/Si hetero-junction

    International Nuclear Information System (INIS)

    Zebbar, N.; Chabane, L.; Gabouze, N.; Kechouane, M.; Trari, M.; Aida, M.S.; Belhousse, S.; Hadj Larbi, F.

    2016-01-01

    Undoped zinc oxide (ZnO) and indium-doped (ZnO:In) thin films were grown at different temperatures (250–400 °C) on alkali-free borosilicate glass and n-Si (100) substrates by Ultrasonic Spray Pyrolysis method. The structural, compositional, optical and electrical properties of ZnO films were investigated by X-ray diffraction, Scanning Electron Microscopy, Rutherford Back Scattering Spectroscopy, Fourier Transform Infrared spectroscopy, photoluminescence (PL) and the four-point probe technique. The predominance of ultraviolet (UV) and blue emission intensities was found to be closely dependent on the resistivity of the film. The visible emission band (peaking at 432 nm) prevails for low film resistivity, ranging from 10 −2 to 1 Ω·cm. By contrast, for higher resistivity (> 1 Ω·cm), there is a predominance of the UV band (382 nm). The PL and photoresponsivity results of fabricated ZnO:In/n-Si(100) heterojunctions prepared at different temperatures are discussed. The maximum spectral response of the ZnO:8%In/Si heterojunction diode fabricated at 250 °C was about 80 mA/W at zero bias. The highlighted results are attractive for the optoelectronic applications. - Highlights: • Properties of ZnO thin films grown by Ultrasonic Spray Pyrolysis at 350 °C. • Photoluminescence emission intensity in undoped ZnO film: effect of the resistivity • Photoluminescence emission intensity of In-doped ZnO film is resistivity dependent. • The spectral response of ZnO:In/Si hetero-junction deposited in the range (250–400 °C)

  14. Investigation of the photoluminescence properties of Au/ZnO/sapphire and ZnO/Au/sapphire films by experimental study and electromagnetic simulation

    International Nuclear Information System (INIS)

    Zeng, Yong; Zhao, Yan; Jiang, Yijian

    2015-01-01

    Highlights: • Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. • The enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light. • Electron transfer which induced by the local surface may be also account for the enhancement of UV emissions. • The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au. - Abstract: Photoluminescent properties from Au/ZnO/sapphire and ZnO/Au/sapphire structures have been investigated. It is found that due to the co-interaction between the incident light and local surface plasmons, the ultraviolet (UV) emissions from the two structures were both enhanced and the visible emissions related to the defects were suppressed. By the means of electromagnetic simulation, it indicates that the enhancement of UV intensity is a result of the enhanced electric field intensity of the 325 nm excitation light, which is induced by localized surface plasmons resonance (LSPR). On the other hand, electron transfer which is induced by the local surface also account for the enhancement of UV emissions. The suppression of the visible emissions might be due to the flowing of electrons in the defect states to the Au, which caused the reduction of the electrons in the defect states

  15. Effect of aging time on the optical, structural and photoluminescence properties of nanocrystalline ZnO films prepared by a sol–gel method

    International Nuclear Information System (INIS)

    Ibrahim, N.B.; AL-Shomar, S.M.; Ahmad, Sahrim Hj.

    2013-01-01

    The nanocrystalline zinc oxide (ZnO) films were deposited by a sol–gel method and the effect of sol aging time 0, 1, 7 and 11 days on the structural, optical and photoluminescence properties were investigated. X-ray diffraction analysis showed that the deposited films were polycrystalline with hexagonal wurtzite structure and high orientation along c-axis direction. The grain size was in the range of 42–60 nm increased with sol aging time also the thickness increased from 70 to 147 nm with the aging time increment. The roughness of ZnO film investigated by atomic force microscope showed that roughness of the films increased then decreased with the increment of the aging time. The deposited films are highly transparent with an average transmission exceeding 82–95% in the visible range (400–800 nm), which slightly improved with aging time. The measured optical band gap values of the ZnO films were between 3.1 eV and 3.6 eV. The photoluminescence intensity increased with the aging time and the ZnO films have ultraviolet, violet and green emission.

  16. Deep UV Native Fluorescence Imaging of Antarctic Cryptoendolithic Communities

    Science.gov (United States)

    Storrie-Lombardi, M. C.; Douglas, S.; Sun, H.; McDonald, G. D.; Bhartia, R.; Nealson, K. H.; Hug, W. F.

    2001-01-01

    An interdisciplinary team at the Jet Propulsion Laboratory Center for Life Detection has embarked on a project to provide in situ chemical and morphological characterization of Antarctic cryptoendolithic microbial communities. We present here in situ deep ultraviolet (UV) native fluorescence and environmental scanning electron microscopy images transiting 8.5 mm into a sandstone sample from the Antarctic Dry Valleys. The deep ultraviolet imaging system employs 224.3, 248.6, and 325 nm lasers to elicit differential fluorescence and resonance Raman responses from biomolecules and minerals. The 224.3 and 248.6 nm lasers elicit a fluorescence response from the aromatic amino and nucleic acids. Excitation at 325 nm may elicit activity from a variety of biomolecules, but is more likely to elicit mineral fluorescence. The resultant fluorescence images provide in situ chemical and morphological maps of microorganisms and the associated organic matrix. Visible broadband reflectance images provide orientation against the mineral background. Environmental scanning electron micrographs provided detailed morphological information. The technique has made possible the construction of detailed fluorescent maps extending from the surface of an Antarctic sandstone sample to a depth of 8.5 mm. The images detect no evidence of microbial life in the superficial 0.2 mm crustal layer. The black lichen component between 0.3 and 0.5 mm deep absorbs all wavelengths of both laser and broadband illumination. Filamentous deep ultraviolet native fluorescent activity dominates in the white layer between 0.6 mm and 5.0 mm from the surface. These filamentous forms are fungi that continue into the red (iron-rich) region of the sample extending from 5.0 to 8.5 mm. Using differential image subtraction techniques it is possible to identify fungal nuclei. The ultraviolet response is markedly attenuated in this region, apparently from the absorption of ultraviolet light by iron-rich particles coating

  17. A far ultraviolet spectroscopic study of the reflectance, luminescence and electronic properties of SrMgF4 single crystals

    International Nuclear Information System (INIS)

    Ogorodnikov, I.N.; Pustovarov, V.A.; Omelkov, S.I.; Isaenko, L.I.; Yelisseyev, A.P.; Goloshumova, A.A.; Lobanov, S.I.

    2014-01-01

    The electronic properties of single crystals of SrMgF 4 have been determined using low-temperature (10–293 K) time-resolved vacuum ultraviolet synchrotron radiation spectroscopy, far ultraviolet (3.7–36 eV) reflectance spectra and calculations for the spectra of optical functions. The bandgap of investigated compound was found at E g =12.55eV, the energy threshold for creation of the unrelaxed excitons at E n=1 =11.37eV, and the low-energy fundamental absorption edge at 10.3 eV. Two groups of photoluminescence (PL) bands have been identified: the exciton-type emissions at 2.6–3.3 and 3.3–4.2 eV and defect-related emissions at 1.8–2.6 and 4.2–5.5 eV. It was shown that PL excitation (PLE) for the exciton-type emission bands occurs mainly at the low-energy tail of the fundamental absorption of the crystal with a maximum at 10.7 eV. At excitation energies above E g the energy transfer from the host lattice to the PL emission centers is inefficient. The paper discusses the origin of the excitonic-type PLE spectra taking into account the results of modeling the PLE spectra shape in the framework of a simple diffusion theory and surface energy losses. -- Highlights: • Far-ultraviolet reflection spectra of SrMgF 4 were studied. • Photoluminescence (PL) emission and PL excitation spectra were studied. • Optical function spectra were calculated on the basis of experimental data. • Electronic structure properties of undoped SrMgF 4 crystals were determined

  18. Photoluminescence model of sulfur passivated p-InP nanowires

    International Nuclear Information System (INIS)

    Tajik, N; Haapamaki, C M; LaPierre, R R

    2012-01-01

    The effect of ammonium polysulfide solution, (NH 4 ) 2 S x , on the surface passivation of p-doped InP nanowires (NWs) was investigated by micro-photoluminescence. An improvement in photoluminescence (PL) intensity from individual NWs upon passivation was used to optimize the passivation procedure using different solvents, sulfur concentrations and durations of passivation. The optimized passivation procedure gave an average of 24 times improvement in peak PL intensity. A numerical model is presented to explain the PL improvement upon passivation in terms of a reduction in surface trap density by two orders of magnitude from 10 12 to 10 10 cm −2 , corresponding to a change in surface recombination velocity from 10 6 to 10 4 cm s −1 . The diameter dependence of the PL intensity is investigated and explained by the model. The PL intensity from passivated nanowires decreased to its initial (pre-passivation) value over a period of seven days in ambient air, indicating that the S passivation was unstable. (paper)

  19. Photoluminescence of ZnBeMnSe solid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Strzałkowski, K., E-mail: skaroll@fizyka.umk.pl; Firszt, F.; Marasek, A.

    2017-04-15

    In this paper optical properties of Zn{sub 1-x-y}Be{sub x}Mn{sub y}Se mixed semiconductors were studied as a function of both, temperature and excitation power. The crystals under investigation were grown by the high-pressure, high-temperature vertical Bridgman technique within the range of the composition 0.05≤x, y≤0.2. Photoluminescence spectra for the lowest content of Mn and Be exhibit character typical for II-VI semiconductors together with intensive yellow-orange manganese emission. Evolution of the excitonic emission as the function of temperature allowed determining the energy gap of the investigated semiconductors. Absorbance and photoluminescence excitation spectra confirmed crystal field splitting of excited atomic terms of manganese ions into the states, denoted according to the crystal field theory in the case of tetrahedral symmetry. Temperature and laser power dependences of luminescence showed anomalous behavior of the manganese emission. It turned out that the position of the Mn{sup 2+} related luminescence band does not change monotonically with the variation of the temperature or the excitation power. Finally, switching of the manganese emission has been observed. By increasing laser power of exciting radiation, the Mn-related emission could be quenched by almost two orders in magnitude. This effect was especially strong at low temperature and it was fully reversible.

  20. Photoluminescence of 1,3-dimethyl pyrazoloquinoline derivatives

    Energy Technology Data Exchange (ETDEWEB)

    Koscien, E. [1st Liceum, Sobieskiego 22, 42-700 Lubliniec (Poland); Gondek, E.; Pokladko, M. [Institute of Physics, Technical University of Krakow, Podhorazych 1, 30-084 Krakow (Poland); Jarosz, B. [Department of Chemistry, Hugon Kollotaj Agricultural University, Al. Mickiewicza 24/28, 30-059 Krakow (Poland); Vlokh, R.O. [Institute of Physical Optics, Dragomanova 23, 79005 Lviv (Ukraine); Kityk, A.V. [Department of Electrical Engineering, Czestochowa University of Technology, Al. Armii Krajowej 17, 42-200 Czestochowa (Poland)], E-mail: kityk@ap.univie.ac.at

    2009-04-15

    This paper presents absorption and photoluminescence of 6-F, 6-Br, 6-Cl, 7-TFM and 6-COOEt derivatives of 1,3-dimethyl-1H-Pyrazolo[3,4-b]quinoline (DMPQ). The measured absorption and emission spectra are compared with the quantum chemical calculations performed by means of the semi-empirical methods (AM1 or PM3) that are applied either to the equilibrium conformations in vacuo (T = 0 K) or combined with the molecular dynamics simulations (T = 300 K). The spectra calculated by the AM1 method appear to be for all dyes in practically excellent agreement with the measured ones. In particular, the position of the first absorption band is obtained with the accuracy up to a few nanometers, whereas the calculated photoluminescence spectra predict the positions of the emission maxima for a gas phase with the accuracy up to 10-18 nm. The photoemission spectra of DMPQ dyes are considerably less solvatochromic comparing to phenyl-containing pyrazoloquinoline derivatives. According to the quantum chemical analysis the reason for such behaviour lies in a local character of the electronic transitions of DMPQ dyes which are characterized by a relatively small difference between the excited state and ground state dipole moments. Importantly that the rotational dynamics of both methyl subunits does not change this situation.

  1. Photoluminescence and optical transmission of diamond and its imitators

    International Nuclear Information System (INIS)

    Lipatov, E.I.; Avdeev, S.M.; Tarasenko, V.F.

    2010-01-01

    Photoluminescence and optical transmission spectra of several samples of natural and synthetic diamond and its imitators - fianite and corundum - are investigated. The band-A of luminescence at 440 nm, the vibronic N3 system of luminescence and absorption at 415.2 nm, the fundamental absorption edge at 225 nm, and the secondary absorption below 308 nm are the main identifying markers of natural diamonds. For synthetic diamonds, however, such identifying markers are the free-exciton luminescence at 235 nm, the band-A, and the fundamental absorption edge. Fianites can be identified by the structureless wideband at 500 nm and the wide transmission band in the entire visible range. Colored corundum samples with chrome impurities emit the narrow line at 693 nm and show the absorption band in the 500-600 nm spectral range. A new method for diamond express identification is developed on the basis of measurement of photoluminescence and optical transmission spectra of the samples. It is shown that a diamond tester can be designed combining a spectrometer and a KrCl-excilamp radiating at 222 nm.

  2. Photoluminescence and lasing in whispering gallery mode glass microspherical resonators

    Energy Technology Data Exchange (ETDEWEB)

    Ristić, D. [Ruđer Bošković Institute, Division of Materials Physics, Laboratory for Molecular Physics, Bijenička c. 54, Zagreb (Croatia); Center of Excellence for Advanced Materials and Sensing Devices, Research unit New Functional Materials, Bijenička c. 54, Zagreb (Croatia); Berneschi, S.; Camerini, M. [IFAC-CNR Istituto di Fisica Applicata, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Farnesi, D.; Pelli, S. [IFAC-CNR Istituto di Fisica Applicata, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Centro Studi e Ricerche ' E. Fermi' , Piazza del Viminale 2, 00184 Roma (Italy); Trono, C. [IFAC-CNR Istituto di Fisica Applicata, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Chiappini, A.; Chiasera, A.; Ferrari, M. [CSMFO Group, Istituto di Fotonica e Nanotecnologie, IFN-CNR, Via alla Cascata 56/C, 38050 Povo-Trento (Italy); Lukowiak, A. [Institute of Low Temperature and Structure Research, PAS, ul. Okolna 2, Wroclaw 50-950 (Poland); Dumeige, Y.; Féron, P. [Laboratoire d' Optronique, (CNRS-UMR 6082-Foton), ENSSAT, 6 rue de Kérampont, 22300 Lannion (France); Righini, G.C. [IFAC-CNR Istituto di Fisica Applicata, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Centro Studi e Ricerche ' E. Fermi' , Piazza del Viminale 2, 00184 Roma (Italy); Soria, S., E-mail: s.soria@ifac.cnr.it [IFAC-CNR Istituto di Fisica Applicata, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Conti, G. Nunzi [IFAC-CNR Istituto di Fisica Applicata, Via Madonna del Piano 10, 50019 Sesto Fiorentino (Italy); Centro Studi e Ricerche ' E. Fermi' , Piazza del Viminale 2, 00184 Roma (Italy)

    2016-02-15

    We report experimental results regarding the development of Er{sup 3+}-doped glass microspherical cavities for the fabrication of compact sources at 1.55 μm. We investigate several different approaches in order to fabricate the microspheres including direct melting of Er{sup 3+}-doped glass powders, synthesis of Er{sup 3+}-doped monolithic microspheres by drawing Er{sup 3+}-doped glass, and coating of silica microspheres with an Er{sup 3+}-doped sol–gel layer. Details of the different fabrication processes are presented together with the photoluminescence characterization in free space configuration of the microspheres and of the glass precursor. We have analyzed the photoluminescence spectra of the whispering gallery modes of the microspheres excited using evanescent coupling and we demonstrate tunable laser action in a wide range of wavelengths around 1.55 μm. As much as 90 μW of laser output power was measured in Er{sup 3+}-doped glass microspheres. - Highlights: • Different approaches in microsphere fabrication and various types of post-processing. • Trimming of photorefractive glass microsphere lasers with UV light. • Peak power record of 90 μW by pumping at 1480 nm.

  3. Enhancement of porous silicon photoluminescence by electroless deposition of nickel

    Energy Technology Data Exchange (ETDEWEB)

    Amdouni, S. [Unité de nanomatériaux et photonique, Université El Manar, Faculté des Sciences de Tunis, Département de Physique, 2092 El Manar, Tunis Tunisia (Tunisia); Rahmani, M., E-mail: rahmanimehdi79@yahoo.com [Unité de nanomatériaux et photonique, Université El Manar, Faculté des Sciences de Tunis, Département de Physique, 2092 El Manar, Tunis Tunisia (Tunisia); Zaïbi, M.-A [Unité de nanomatériaux et photonique, Université El Manar, Faculté des Sciences de Tunis, Département de Physique, 2092 El Manar, Tunis Tunisia (Tunisia); Ecole Nationale Supérieure des Ingénieurs de Tunis, Université de Tunis, 5 Avenue Taha Hussein, 1008 Tunis (Tunisia); Oueslati, M. [Unité de nanomatériaux et photonique, Université El Manar, Faculté des Sciences de Tunis, Département de Physique, 2092 El Manar, Tunis Tunisia (Tunisia)

    2015-01-15

    Nickel-porous silicon nanocomposites (PS/Ni) are elaborated by an electroless deposition method using NiCl{sub 2} aqueous solution. The presence of nickel ions in the porous layer is confirmed by Fourier Transformed InfraRed spectroscopy (FTIR) and Raman spectroscopy. The photoluminescence (PL) spectra of PS/Ni, prepared at different electroless durations (t{sub edp}), are analyzed. A remarkable enhancement in the integrated PL intensity of PS containing nickel was observed. The lower t{sub edp} favor the deposition of nickel in PS, hence the silicon dangling bonds at the porous surface are quenched and this was increased the PL intensity. However, for the longer t{sub edp}, the PL intensity has been considerably decreased due to the destruction of some Si nanocrystallites. The PL spectra of PS/Ni, for t{sub edp} less than 8 min, show a multiband profile indicating the creation of new luminescent centers by Ni elements which induces a strong modification in the emission mechanisms. - Highlights: • Deposition of Ni ions into porous silicon (PS) layer using the electroless method. • Formation of Ni–O bonds on the porous layer. • The photoluminescence (PL) intensity of PS is enhanced after Ni deposition. • The increase of the PL is due to the contribution of radiative centers related to Ni.

  4. Tunable photoluminescence of porous silicon by liquid crystal infiltration

    International Nuclear Information System (INIS)

    Ma Qinglan; Xiong Rui; Huang Yuanming

    2011-01-01

    The photoluminescence (PL) of porous silicon films has been investigated as a function of the amount of liquid crystal molecules that are infiltrated into the constricted geometry of the porous silicon films. A typical nematic liquid crystal 4-pentyl-4'-cyanobiphenyl was employed in our experiment as the filler to modify the PL of porous silicon. It is found that the originally red PL of porous silicon films can be tuned to blue by simply adjusting the amount of liquid crystal molecules in the microchannels of the porous films. The chromaticity coordinates are calculated for the recorded PL spectra. The mechanism of the tunable PL is discussed. Our results have demonstrated that the luminescent properties of porous silicon films can be efficiently tuned by liquid crystal infiltration. - Highlights: → Liquid crystal infiltration can tune the photoluminescence of porous silicon. → Red emission of porous silicon can be switched to blue by the infiltration. → Chromaticity coordinates are calculated for the tuned emissions. → White emission is realized for porous silicon by liquid crystal infiltration.

  5. Photodetector of ultra-violet radiation

    International Nuclear Information System (INIS)

    Dorogan, V.; Vieru, T.; Coseac, V.; Chirita, F.

    1999-01-01

    The invention relates to photodetectors on the semiconductors base, in particular, to photodetectors of ultra-violet radiation and can be used in the optoelectronics systems for determining the intensity and dose of ultraviolet radiation emitted by the Sun and other sources. In the structure of the photodetector of ultraviolet radiation with a superficial potential barrier formed of semiconductors A 3 B 5 with the prohibited power width Eg 1 , solid solutions thereof with the prohibited power width Eg 2 and SnO 2 or ITO, in the semiconductors A 3 B 5 at a surface distance less than the absorption length of the visible radiation it is formed an isotype heterojunction between the semiconductors A 3 B 5 and solid solutions thereof with the prohibited power width Eg 2 > Eg 1 . The technical result consists in manufacturing of a photodetector sensitive solely to the ultraviolet radiation

  6. Outdoor ultraviolet exposure of children and adolescents

    International Nuclear Information System (INIS)

    Diffey, B.L.; Gibson, C.J.

    1996-01-01

    The weekday and weekend outdoor ultraviolet exposure of young people from primary and secondary schools in three geographically distinct regions of England was determined over a 3-month period in summer. Ultraviolet exposure was measured using personal film badges worn by each young person and time spent outdoors, in hourly intervals, assessed using exposure records. In each area a class of 9-10 year-old children from a primary school and a class of 14-15-year-old adolescents from a secondary school took part, giving a total of 180 subjects. We found that primary school children received higher outdoor ultraviolet exposure than young people in secondary schools, and geographical differences in exposure could not be accounted for solely by differences in ambient ultraviolet. There was little difference between the exposure of males and females. Children and adolescents did not behave as homogeneous groups with regard to exposure. (Author)

  7. Ultraviolet light - nature's own disinfection process

    Energy Technology Data Exchange (ETDEWEB)

    Munkeberg, T [Thorolf Gregersen a/s, Oslo (Norway)

    1978-05-18

    Ultraviolet radiation from the sun is the means by which natural pollution products, as well as much of the smaller amount of pollution products produced by man, are converted and returned to the cycle of nature. Artificial ultraviolet radiation offers an optimum method for the disinfection of drinking water and can be used in the long term without undesireable effects on man or the enviromment. There is no evidence that ultraviolet irradiation leads to radiation resistant mutations of bacteria. The geometrical arrangement of ultraviolet disinfection units is described and the capacities of typical units is mentioned as being 600-800 m/sup 3/ /hr, though there is no reason why this should not be increased.

  8. Ultraviolet light - nature's own disinfection process

    International Nuclear Information System (INIS)

    Munkeberg, T.

    1978-01-01

    Ultraviolet radiation from the sun is the means by which natural pollution products, as well as much of the smaller amount of pollution products produced by man, are converted and returned to the cycle of nature. Artificial ultraviolet radiation offers an optimum method for the disinfection of drinking water and can be used in the long term without undesireable effects on man or the enviromment. There is no evidence that ultraviolet irradiation leads to radiation resistant mutations of bacteria. The geometrical arrangement of ultraviolet disinfection units is described and the capacities of typical units is mentioned as being 600-800 m 3 /hr, though there is no reason why this should not be increased. (JIW)

  9. Inactivation of mitochondrial ATPase by ultraviolet light

    International Nuclear Information System (INIS)

    Chavez, E.; Cuellar, A.

    1984-01-01

    The present work describes experiments that show that far-ultraviolet irradiation induce the inhibition of ATPase activity in both membrane-bound and soluble F1. It was also found that ultraviolet light promotes the release of tightly bound adenine nucleotides from F1-ATPase. Experiments carried out with submitochondrial particles indicate that succinate partially protects against these effects of ultraviolet light. Titration of sulfhydryl groups in both irradiated submitochondrial particles and soluble F1-ATPase indicates that a conformational change induced by photochemical modifications of amino acid residues appears involved in the inactivation of the enzyme. Finally, experiments are described which show that the tyrosine residue located in the active site of F1-ATPase is modified by ultraviolet irradiation

  10. Stability and Transient Effects in Ultraviolet Filaments

    National Research Council Canada - National Science Library

    Niday, Thomas

    2004-01-01

    .... Much of the work in this field has been done with infrared pulses; however, it has been proposed that ultraviolet pulses have the advantage that longer pulse lengths can be used, thereby delivering more energy...

  11. PMMA Wettability Caused by Ultraviolet Radiation

    OpenAIRE

    Dehtjars, J; Lancere, L; Poļaka, N; Soudnikovich, A; Tjuļkins, F; Valters, V

    2010-01-01

    The article is targeted to explore ultraviolet radiation (UV) influence on PMMAf or eye prostheses. UV beingt he Sun lightc omponenta nd could effect PMMA surface that in turn contributesi nteractionw ith tear. PMMA wettabilityw as poweredb y UV.

  12. Ultraviolet treatment on high performance filaments

    International Nuclear Information System (INIS)

    Gu Huang

    2005-01-01

    Quartz, Kevlar, carbon, and glass filaments were irradiated by ultraviolet ray with various periods. Tensile strength of the treated fibres was tested and analyzed, and the outward appearance of the treated filaments was shown

  13. Vacuum-Ultraviolet Photovoltaic Detector.

    Science.gov (United States)

    Zheng, Wei; Lin, Richeng; Ran, Junxue; Zhang, Zhaojun; Ji, Xu; Huang, Feng

    2018-01-23

    Over the past two decades, solar- and astrophysicists and material scientists have been researching and developing new-generation semiconductor-based vacuum ultraviolet (VUV) detectors with low power consumption and small size for replacing traditional heavy and high-energy-consuming microchannel-detection systems, to study the formation and evolution of stars. However, the most desirable semiconductor-based VUV photovoltaic detector capable of achieving zero power consumption has not yet been achieved. With high-crystallinity multistep epitaxial grown AlN as a VUV-absorbing layer for photogenerated carriers and p-type graphene (with unexpected VUV transmittance >96%) as a transparent electrode to collect excited holes, we constructed a heterojunction device with photovoltaic detection for VUV light. The device exhibits an encouraging VUV photoresponse, high external quantum efficiency (EQE) and extremely fast tempera response (80 ns, 10 4 -10 6 times faster than that of the currently reported VUV photoconductive devices). This work has provided an idea for developing zero power consumption and integrated VUV photovoltaic detectors with ultrafast and high-sensitivity VUV detection capability, which not only allows future spacecraft to operate with longer service time and lower launching cost but also ensures an ultrafast evolution of interstellar objects.

  14. Human exposure to ultraviolet radiation

    International Nuclear Information System (INIS)

    Bernhardt, J.H.; Matthes, R.

    1987-01-01

    Ultraviolet radiation is that part of the electromagnetic spectrum located between the softest ionizing radiation and visible radiation. The lower limit of 100 nm is equivalent to photon energies of 12.4 eV, which corresponds approximately to the limit for the production of ionization in biologically important materials. A historical subdividing of the UV-region takes some of the biological effects into account. In this arrangement the range 400-315 nm, the so-called black light region, is called UV-A. In this wavelength region, fluorescence can be induced in many substances. UV-B covers the range 315-280 nm (the skin erythemal region). Most of the biologically active and potentially harmful UV from the sun reaching the surface of the earth is part of this spectral region. UV-C includes the radiation of wavelengths less than 280 nm (the germicidal region). It should be noted that this classification is somewhat arbitrary, and today it is more usual to evaluate the biological effectiveness of the whole UV-range from 200 to 400 nm

  15. Unintentional exposure to ultraviolet radiation

    International Nuclear Information System (INIS)

    Sliney, D.H.

    1987-01-01

    To evaluate the risks from unintentional exposure to ultraviolet radiation (UVR), and to consider hazard control regulation, one must face first the problem of their state of scientific knowledge and the public's perception of UVR. Few people in the general public would question the health benefits of sunlight. Many flock to the beaches each summer to develop a healthy tan. Since the 1920's scientists have recognized that most of the benefits--and risks--of sunlight exposure result from the UVR present in sunlight. Dermatologists warn sunbathers to avoid exposure or protect themselves against the intense midday UVR or risk skin cancer. A growing number of scientists warn of hazards to the eye if UVR--perhaps even shorter visible wavelengths--are not filtered by lenses. In addition to any intentional exposure for health or cosmetic purposes, many people are also exposed to UVR without being aware of it or without their intent to be exposed. Outdoor workers are exposed to sunlight, many industrial workers (e.g., welders) are exposed to UVR from arc sources, some UVR penetrates clothing, and people indoors are exposed to UVR from artificial lighting

  16. Dermal damage from ultraviolet radiation

    International Nuclear Information System (INIS)

    Kligman, L.H.

    1988-01-01

    Ultraviolet (UV) radiation is increasingly recognized as the cause of a vast number of changes in the skin of humans and animals. These include alterations at the molecular, cellular, tissue and systematic levels. In the recent past, much has been learned about the immediate effects in skin of acute UV exposure (i.e. sunburn) with its epidermal cell death, inflammation and vasolidation. With chronic exposure, many of the clinical and histologic effects can be seen only after decades. Visually, these are hyper- and hypopigmented macules, dry scaly, wrinkled skin with a variety of benign, pre-malignant and malignant neoplasms. All epidermal in origin, they lead, inexorably in humans, to the appearance the authors described as photo-aged. Underlying many of these visible manifestations are drastic changes in the dermis. These relate chiefly to destruction of mature collagen, with a compensatory overproduction of reticulin fibers, hyperplasia of elastic fibers eventuating in elastosis, increased levels of the glycosaminoglycans (GAGs) comprising the ground substance and changes in the microvasculature. First described in actinically damaged humans, systematic investigation required an animal model

  17. Masks for extreme ultraviolet lithography

    International Nuclear Information System (INIS)

    Cardinale, G; Goldsmith, J; Kearney, P A; Larson, C; Moore, C E; Prisbrey, S; Tong, W; Vernon, S P; Weber, F; Yan, P-Y.

    1998-01-01

    In extreme ultraviolet lithography (EUVL), the technology specific requirements on the mask are a direct consequence of the utilization of radiation in the spectral region between 10 and 15 nm. At these wavelengths, all condensed materials are highly absorbing and efficient radiation transport mandates the use of all-reflective optical systems. Reflectivity is achieved with resonant, wavelength-matched multilayer (ML) coatings on all of the optical surfaces - including the mask. The EUV mask has a unique architecture - it consists of a substrate with a highly reflective ML coating (the mask blank) that is subsequently over-coated with a patterned absorber layer (the mask). Particulate contamination on the EUVL mask surface, errors in absorber definition and defects in the ML coating all have the potential to print in the lithographic process. While highly developed technologies exist for repair of the absorber layer, no viable strategy for the repair of ML coating defects has been identified. In this paper the state-of-the-art in ML deposition technology, optical inspection of EUVL mask blank defects and candidate absorber patterning approaches are reviewed

  18. Ultraviolet complete dark energy model

    Science.gov (United States)

    Narain, Gaurav; Li, Tianjun

    2018-04-01

    We consider a local phenomenological model to explain a nonlocal gravity scenario which has been proposed to address dark energy issues. This nonlocal gravity action has been seen to fit the data as well as Λ -CDM and therefore demands a more fundamental local treatment. The induced gravity model coupled with higher-derivative gravity is exploited for this proposal, as this perturbatively renormalizable model has a well-defined ultraviolet (UV) description where ghosts are evaded. We consider a generalized version of this model where we consider two coupled scalar fields and their nonminimal coupling with gravity. In this simple model, one of the scalar field acquires a vacuum expectation value (VEV), thereby inducing a mass for one of the scalar fields and generating Newton's constant. The induced mass however is seen to be always above the running energy scale thereby leading to its decoupling. The residual theory after decoupling becomes a platform for driving the accelerated expansion under certain conditions. Integrating out the residual scalar generates a nonlocal gravity action. The leading term of which is the nonlocal gravity action used to fit the data of dark energy.

  19. Photoluminescence properties of Eu2+-activated Ca2Y2Si2O9 phosphor

    NARCIS (Netherlands)

    Zhang, Zhijun; Delsing, A.C.A.; Notten, P.H.L.; Zhao, Jingtai; Hintzen, H.T.J.M.

    2012-01-01

    Eu2+-activated Ca2Y2Si2O9 phosphors with different Eu2+ concentrations have been prepared by a solid-state reaction method at high temperature and their photoluminescence (PL) properties were investigated. Photoluminescence results show that Eu2+-doped Ca2Y2Si2O9 can be efficiently excited by

  20. Enhanced phonon-assisted photoluminescence in InAs/GaAs parallelepiped quantum dots

    NARCIS (Netherlands)

    Fomin, V.; Gladilin, V.N.; Klimin, S.N.; Devreese, J.T.; Koenraad, P.M.; Wolter, J.H.

    2000-01-01

    We analyze the phonon-assisted photoluminescence due to the intraband transitions of an electron between the size-quantized states in rectangular parallelepiped InAs quantum dots ("quantum bricks") embedded into GaAs. The phonon-assisted photoluminescence is strongly enhanced by two processes.

  1. Effect of γ irradiation on the photoluminescence kinetics of porous silicon

    International Nuclear Information System (INIS)

    Agekyan, V.F.; Stepanov, Yu.A.; Emtsev, V.V.; Lebedev, A.A.; Poloskin, D.S.; Remenyuk, A.D.

    1999-01-01

    The effect of γ irradiation on the photoluminescence decay dynamics in porous silicon is investigated. Growth of the photoluminescence intensity and decrease of the decay time in irradiated porous silicon are explained by a lowering of the barriers to recombination of spatially separated electrons and holes via tunneling. The γ irradiation of porous silicon leads to a greater dispersion of the decay time

  2. Influence of near ultraviolet light on microorganisms

    International Nuclear Information System (INIS)

    Fraikin, G.Y.A.; Rubin, L.B.

    1980-01-01

    Our results and the recent literature data on the biological action of near ultraviolet light (300-380 nm) are examined in the review. Factual material is presented on the principles governing the manifestation of the following effects of near ultraviolet light in microorganisms: inactivation, delayed growth, photoreactivation, photoprotection, photoinduced sporulation (in fungi), and carotene synthesis. The mature and possible mechanisms of the effects examined are discussed

  3. Ultraviolet colors of subdwarf O stars

    International Nuclear Information System (INIS)

    Wesselius, P.R.

    1978-01-01

    The group of subdwarf O stars consisting of field stars and some central stars of old planetary nebulae does occupy an interesting place in the HR diagram. Greenstein and Sargent (1974) have tried to establish this place, and conclude that especially the hottest ones need ultraviolet data to improve the values of effective temperature and absolute luminosity. The author therefore observed some twenty sdO stars in the far ultraviolet using the spectrophotometer in the Netherlands' satellite ANS. (Auth.)

  4. Ultraviolet photoelectron spectroscopy of transient species

    International Nuclear Information System (INIS)

    Leeuw, D.M. de.

    1979-01-01

    Transient species are studied in the isolation of the gas phase using ultraviolet photoelectron spectroscopy (PES). A description of the equipment used and a discussion of some theoretical topics, which play a role in the interpretation of PE spectra, are given. Koopmans' theorem, Hartree-Fock-Slater (HFS) calculations and the sum rule are discussed. A versatile ultraviolet PE spectrometer, designed specifically for this purpose, has been built and the construction and performance of this instrument are described. (Auth.)

  5. Ultraviolet Behavior of N = 8 Supergravity

    International Nuclear Information System (INIS)

    Dixon, Lance J.

    2010-01-01

    In these lectures the author describes the remarkable ultraviolet behavior of N = 8 supergravity, which through four loops is no worse than that of N = 4 super-Yang-Mills theory (a finite theory). I also explain the computational tools that allow multi-loop amplitudes to be evaluated in this theory - the KLT relations and the unitarity method - and sketch how ultraviolet divergences are extracted from the amplitudes.

  6. Ultranarrow and widely tunable Mn2+-Induced photoluminescence from single Mn-doped nanocrystals of ZnS-CdS alloys.

    Science.gov (United States)

    Hazarika, Abhijit; Layek, Arunasish; De, Suman; Nag, Angshuman; Debnath, Saikat; Mahadevan, Priya; Chowdhury, Arindam; Sarma, D D

    2013-06-28

    Extensively studied Mn-doped semiconductor nanocrystals have invariably exhibited photoluminescence over a narrow energy window of width ≤150  meV in the orange-red region and a surprisingly large spectral width (≥180  meV), contrary to its presumed atomic-like origin. Carrying out emission measurements on individual single nanocrystals and supported by ab initio calculations, we show that Mn PL emission, in fact, can (i) vary over a much wider range (∼370  meV) covering the deep green--deep red region and (ii) exhibit widths substantially lower (∼60-75  meV) than reported so far, opening newer application possibilities and requiring a fundamental shift in our perception of the emission from Mn-doped semiconductor nanocrystals.

  7. Photoluminescence and photoluminescence excitation studies in 80 MeV Ni ion irradiated MOCVD grown GaN

    Energy Technology Data Exchange (ETDEWEB)

    Devaraju, G. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Pathak, A.P., E-mail: appsp@uohyd.ernet.in [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Srinivasa Rao, N.; Saikiran, V. [School of Physics, University of Hyderabad, Central University P.O., Hyderabad 500 046 (India); Enrichi, Francesco [Coordinamento Interuniversitario Veneto per le Nanotecnologie (CIVEN), via delle Industrie 5, Marghera, I-30175Venice (Italy); Trave, Enrico [Dipartimento di Chimica Fisica, Universita Ca' Foscari Venezia, Dorsoduro 2137, I-30123 Venice (Italy)

    2011-09-01

    Highlights: {yields} MOCVD grown GaN samples are irradiated with 80 MeV Ni ions at room temperature. {yields} PL and PLE studies have been carried out for band to band, BL and YL emissions. {yields} Ni ions irradiated GaN shows BL band at 450 nm besides YL band. {yields} Radiation annealed Ga vacancies have quenching effect on YL intensity. {yields} We speculated that BL and YL are associated with N and Ga vacancies, respectively. - Abstract: We report damage creation and annihilation under energetic ion bombardment at a fixed fluence. MOCVD grown GaN thin films were irradiated with 80 MeV Ni ions at a fluence of 1 x 10{sup 13} ions/cm{sup 2}. Irradiated GaN thin films were subjected to rapid thermal annealing for 60 s in nitrogen atmosphere to anneal out the defects. The effects of defects on luminescence were explored with photoluminescence measurements. Room temperature photoluminescence spectra from pristine sample revealed presence of band to band transition besides unwanted yellow luminescence. Irradiated GaN does not show any band to band transition but there is a strong peak at 450 nm which is attributed to ion induced defect blue luminescence. However, irradiated and subsequently annealed samples show improved band to band transitions and a significant decrease in yellow luminescence intensity due to annihilation of defects which were created during irradiation. Irradiation induced effects on yellow and blue emissions are discussed.

  8. Preparation of Polyimide/Zinc Oxide Nanocomposite Films via an Ion-Exchange Technique and Their Photoluminescence Properties

    Directory of Open Access Journals (Sweden)

    Shuxiang Mu

    2011-01-01

    Full Text Available Polyimide (PI composite films with ZnO nanoparticles embedded in the surface layer were prepared by alkali hydrolyzation following ion exchange in Zn(NO32 solution and thermal treatment of the zinc ion-doped PI films in air atmosphere. The effect of alkali treatment, ion exchange, and thermal treatment conditions was investigated in relation to the amount of zinc atomic loading, morphology, photoluminescence (PL, and thermal properties of the PI/ZnO composite films using ICP, XPS, FE-SEM, TEM, Raman microscope, TGA, and DSC. ZnO nanoparticles were formed slowly and dispersed uniformly in the surface-modified layers of PI films with an average diameter of 20 nm. The PL spectra of all the PI/ZnO nanocomposite films obtained at 350°C/7 h possessed a weak ultraviolet emission peak and a broad and strong visible emission band. The PI/ZnO nanocomposite films maintained the excellent thermal property of the host PI films.

  9. Femtosecond UV laser non-ablative surface structuring of ZnO crystal: impact on exciton photoluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Museur, Luc [Laboratoire de Physique des Lasers (LPL), UMR 7538 CNRS, Institut Galilee, Universite Paris 13, 93430 Villetaneuse (France); Michel, Jean-Pierre [Laboratoire des Proprietes Mecaniques et Thermodynamiques des Materiaux (LPMTM), UMR 9001 CNRS, Institut Galilee, Universite Paris 13, 93430 Villetaneuse (France); Portes, Patrick; Kanaev, Andrei V. [Laboratoire d' Ingenierie des Materiaux et des Hautes Pressions (LIMHP), UMR 1311 CNRS, Institut Galilee, Universite Paris 13, 93430 Villetaneuse (France); Englezis, Apostolis; Stassinopoulos, Andreas; Anglos, Demetrios [Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas (IESL-FORTH), 71110 Heraklion, Crete (Greece)

    2010-03-15

    The ultraviolet (UV) laser irradiation (248 nm) of monocrystalline wurtzite ZnO with 450 fs pulses results in surface modification. A formation of two orthogonal ripple structures with a period of 400-500 nm was observed oriented parallel and perpendicular to the laser beam polarization. The UV exciton emission obtained on the irradiated domains is found greatly enhanced locally up to {approx}10{sup 3} times. The photoluminescence band is redshifted by 2-3 nm and 40% narrower (full width at half-maximum), while at the same time the E{sub 2} (439 cm{sup -1}) Raman band intensity increases up to {approx}50 times. The process is found irreversible with the threshold fluence of 11 mJ/cm{sup 2}, which is considerably lower than the ablation threshold 115 mJ/cm{sup 2}. Fine surface nanostructuring on the scale of {approx}10 nm may be responsible for the observed effect. (c) 2008 Optical Society of America.

  10. Tunable photoluminescence and magnetic properties of Dy(3+) and Eu(3+) doped GdVO4 multifunctional phosphors.

    Science.gov (United States)

    Liu, Yanxia; Liu, Guixia; Dong, Xiangting; Wang, Jinxian; Yu, Wensheng

    2015-10-28

    A series of Dy(3+) or/and Eu(3+) doped GdVO4 phosphors were successfully prepared by a simple hydrothermal method and characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy-dispersive X-ray spectrometry (EDS), photoluminescence (PL) spectroscopy and vibrating sample magnetometry (VSM). The results indicate that the as-prepared samples are pure tetragonal phase GdVO4, taking on nanoparticles with an average size of 45 nm. Under ultraviolet (UV) light excitation, the individual Dy(3+) or Eu(3+) ion activated GdVO4 phosphors exhibit excellent emission properties in their respective regions. The mechanism of energy transfer from the VO4(3-) group and the charge transfer band (CTB) to Dy(3+) and Eu(3+) ions is proposed. Color-tunable emissions in GdVO4:Dy(3+),Eu(3+) phosphors are realized through adopting different excitation wavelengths or adjusting the appropriate concentration of Dy(3+) and Eu(3+) when excited by a single excitation wavelength. In addition, the as-prepared samples show paramagnetic properties at room temperature. This kind of multifunctional color-tunable phosphor has great potential applications in the fields of photoelectronic devices and biomedical sciences.

  11. Chemical states and electronic properties of the interface between aluminium and a photoluminescent conjugated copolymer containing europium complex

    International Nuclear Information System (INIS)

    Cai, Q.J.; Ling, Q.D.; Li, S.; Zhu, F.R.; Huang, Wei; Kang, E.T.; Neoh, K.G.

    2004-01-01

    The chemical states and electronic properties of the interface between thermally evaporated aluminium and a photoluminescent conjugated copolymer containing 9,9'-dihexylfluorene and europium complex-chelated benzoate units in the main chain (PF6-Eu(dbm) 2 phen) were studied in situ by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The changes in C 1s, Eu 3d, N 1s, and Al 2p core-level lineshapes with progressive deposition of aluminium atoms were carefully monitored. Aluminium was found to interact with the conjugated backbone of the copolymer to form the Al carbide, Al-O-C complex, and Al(III)-N chelate at the interface. In addition, the europium ions were reduced to the metallic state by the deposited aluminium atoms, which were oxidized and chelated by the 1,10-phenanthroline ligands (phen). The changes in chemical states at the interface suggest that the intramolecular energy transfer process in this copolymer had been affected. Moreover, aluminium also interacted with the bulk-adsorbed oxygen, which migrates to the surface in response to the deposition of aluminium atoms, to form a layer of metal oxides. On the other hand, the evolution of the UPS spectra suggests that the π-states of the conjugated system were affected and an unfavorable dipole layer was induced by the deposited aluminium atoms

  12. Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

    Science.gov (United States)

    Repins, Ingrid L.; Kuciauskas, Darius

    2015-07-07

    A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

  13. Correlation between surface modification and photoluminescence properties of β-Ga2O3 nanostructures

    Directory of Open Access Journals (Sweden)

    R. Jangir

    2016-03-01

    Full Text Available In this work three different growth methods have been used to grow β-Ga2O3 nanostructures. The nanostructures were characterized by Grazing Incident X-Ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy and Photoluminescence Spectroscopy. Photoluminescence spectra for all the samples of β-Ga2O3 nanostructures exhibit an UV and blue emission band. The relative intensity of UV and blue luminescence is strongly affected by the surface defects present on the nanostructures. Our study shows that Photoluminescence intensity of UV and blue luminescence can be reliably used to determine the quality of β-Ga2O3 nanostructures. Further the work opens up the possibility of using UV excitation and subsequent Photoluminescence analysis as a possible means for oxygen sensing. The Photoluminescence mechanism in β-Ga2O3 nanostructures is also discussed.

  14. In-situ detection of microbial life in the deep biosphere in igneous ocean crust

    Directory of Open Access Journals (Sweden)

    Everett Cosio Salas

    2015-11-01

    Full Text Available The deep biosphere is a major frontier to science. Recent studies have shown the presence and activity of cells in deep marine sediments and in the continental deep biosphere. Volcanic lavas in the deep ocean subsurface, through which substantial fluid flow occurs, present another potentially massive deep biosphere. We present results from the deployment of a novel in-situ logging tool designed to detect microbial life harbored in a deep, native, borehole environment within igneous oceanic crust, using deep ultraviolet native fluorescence spectroscopy. Results demonstrate the predominance of microbial-like signatures within the borehole environment, with densities in the range of 105 cells/mL. Based on transport and flux models, we estimate that such a concentration of microbial cells could not be supported by transport through the crust, suggesting in situ growth of these communities.

  15. In situ Detection of Microbial Life in the Deep Biosphere in Igneous Ocean Crust.

    Science.gov (United States)

    Salas, Everett C; Bhartia, Rohit; Anderson, Louise; Hug, William F; Reid, Ray D; Iturrino, Gerardo; Edwards, Katrina J

    2015-01-01

    The deep biosphere is a major frontier to science. Recent studies have shown the presence and activity of cells in deep marine sediments and in the continental deep biosphere. Volcanic lavas in the deep ocean subsurface, through which substantial fluid flow occurs, present another potentially massive deep biosphere. We present results from the deployment of a novel in situ logging tool designed to detect microbial life harbored in a deep, native, borehole environment within igneous oceanic crust, using deep ultraviolet native fluorescence spectroscopy. Results demonstrate the predominance of microbial-like signatures within the borehole environment, with densities in the range of 10(5) cells/mL. Based on transport and flux models, we estimate that such a concentration of microbial cells could not be supported by transport through the crust, suggesting in situ growth of these communities.

  16. Synthesis, photoluminescence and magnetic properties of barium vanadate nanoflowers

    International Nuclear Information System (INIS)

    Xu, Jing; Hu, Chenguo; Xi, Yi; Peng, Chen; Wan, Buyong; He, Xiaoshan

    2011-01-01

    Graphical abstract: The flower-shaped barium vanadate was obtained for the first time. The photoluminescence and magnetic properties of the barium vanadate nanoflowers were investigated at room temperature. Research highlights: → In the paper, the flower-shaped barium vanadate were obtained for the first time. The CHM method used here is new and simple for preparation of barium vanadate. → The photoluminescence and magnetic properties of the barium vanadate nanoflowers were investigated at room temperature. The strong bluish-green emission was observed. → The ferromagnetic behavior of the barium vanadate nanoflowers was found with saturation magnetization of about 83.50 x 10 -3 emu/g, coercivity of 18.89 Oe and remnant magnetization of 4.63 x 10 -3 emu/g. → The mechanisms of PL and magnetic property of barium vanadate nanoflowers have been discussed. -- Abstract: The flower-shaped barium vanadate has been obtained by the composite hydroxide mediated (CHM) method from V 2 O 5 and BaCl 2 at 200 o C for 13 h. XRD and XPS spectrum of the as-synthesized sample indicate it is hexagonal Ba 3 V 2 O 8 with small amount of Ba 3 VO 4.8 coexistence. Scan electron microscope and transmission electron microscope display that the flower-shaped crystals are composed of nanosheets with thickness of ∼20 nm. The UV-visible spectrum shows that the barium vanadate sample has two optical gaps (3.85 eV and 3.12 eV). Photoluminescence spectrum of the barium vanadate flowers exhibits a visible light emission centered at 492 and 525 nm which might be attributed to VO 4 tetrahedron with T d symmetry in Ba 3 V 2 O 8 . The ferromagnetic behavior of the barium vanadate nanoflowers has been found with saturation magnetization of about 83.50 x 10 -3 emu/g, coercivity of 18.89 Oe and remnant magnetization of 4.63 x 10 -3 emu/g, which is mainly due to the presence of a non-orthovanadate phase with spin S = 1/2.

  17. Ultraviolet refractometry using field-based light scattering spectroscopy

    Science.gov (United States)

    Fu, Dan; Choi, Wonshik; Sung, Yongjin; Oh, Seungeun; Yaqoob, Zahid; Park, YongKeun; Dasari, Ramachandra R.; Feld, Michael S.

    2010-01-01

    Accurate refractive index measurement in the deep ultraviolet (UV) range is important for the separate quantification of biomolecules such as proteins and DNA in biology. This task is demanding and has not been fully exploited so far. Here we report a new method of measuring refractive index using field-based light scattering spectroscopy, which is applicable to any wavelength range and suitable for both solutions and homogenous objects with well-defined shape such as microspheres. The angular scattering distribution of single microspheres immersed in homogeneous media is measured over the wavelength range 260 to 315 nm using quantitative phase microscopy. By least square fitting the observed scattering distribution with Mie scattering theory, the refractive index of either the sphere or the immersion medium can be determined provided that one is known a priori. Using this method, we have measured the refractive index dispersion of SiO2 spheres and bovine serum albumin (BSA) solutions in the deep UV region. Specific refractive index increments of BSA are also extracted. Typical accuracy of the present refractive index technique is ≤0.003. The precision of refractive index measurements is ≤0.002 and that of specific refractive index increment determination is ≤0.01 mL/g. PMID:20372622

  18. Ultraviolet resources over Northern Eurasia.

    Science.gov (United States)

    Chubarova, Natalia; Zhdanova, Yekaterina

    2013-10-05

    We propose a new climatology of UV resources over Northern Eurasia, which includes the assessments of both detrimental (erythema) and positive (vitamin D synthesis) effects of ultraviolet radiation on human health. The UV resources are defined by using several classes and subclasses - UV deficiency, UV optimum, and UV excess - for 6 different skin types. To better quantifying the vitamin D irradiance threshold we accounted for an open body fraction S as a function of effective air temperature. The spatial and temporal distribution of UV resources was estimated by radiative transfer (RT) modeling (8 stream DISORT RT code) with 1×1° grid and monthly resolution. For this purpose special datasets of main input geophysical parameters (total ozone content, aerosol characteristics, surface UV albedo, UV cloud modification factor) have been created over the territory of Northern Eurasia. The new approaches were used to retrieve aerosol parameters and cloud modification factor in the UV spectral region. As a result, the UV resources were obtained for clear-sky and mean cloudy conditions for different skin types. We show that the distribution of UV deficiency, UV optimum and UV excess is regulated by various geophysical parameters (mainly, total ozone, cloudiness and open body fraction) and can significantly deviate from latitudinal dependence. We also show that the UV optimum conditions can be simultaneously observed for people with different skin types (for example, for 4-5 skin types at the same time in spring over Western Europe). These UV optimum conditions for different skin types occupy a much larger territory over Europe than that over Asia. Copyright © 2013 Elsevier B.V. All rights reserved.

  19. Shock-Assisted Superficial Hexagonal-to-Cubic Phase Transition in GaN/Sapphire Interface Induced by Using Ultra-violet Laser Lift-Of Techniques

    International Nuclear Information System (INIS)

    Wei-Hua, Chen; Xiao-Dong, Hu; Xiang-Ning, Kang; Xu-Rong, Zhou; Xiao-Min, Zhang; Tong-Jun, Yu; Zhi-Jian, Yang; Ke, Xu; Guo-Yi, Zhang; Xu-Dong, Shan; Li-Ping, You

    2009-01-01

    Ultra-violet (KrF excimer laser, λ = 248 nm) laser lift-of (LLO) techniques have been operated to the GaN/sapphire structure to separate GaN from the sapphire substrate. Hexagonal to cubic phase transformation induced by the ultra-violet laser lift-of (UV-LLO) has been characterized by micro-Raman spectroscopy, micro-photoluminescence, along with high-resolution transmission electron microscopy (HRTEM). HRTEM indicates that UV-LLO induced phase transition takes place above the LLO interface, without phase transition under the LLO interface. The formed cubic GaN often exists as nanocrystal grains attaching on the bulk hexagonal GaN. The half-loop-cluster-like UV-LLO interface indicates that the LLO-induced shock waves has generated and played an assistant role in the decomposition of the hexagonal GaN and in the formation of cubic GaN grains at the LLO surface

  20. Electrically tuned photoluminescence in large pitch cholesteric liquid crystal

    International Nuclear Information System (INIS)

    Middha, Manju; Kumar, Rishi; Raina, K. K.

    2014-01-01

    Cholesteric liquid crystals are known as 1-D photonic band gap materials due to their periodic helical supramolecular structure and larger birefringence. Depending upon the helical twisted pitch length, they give the characteristic contrast due to selective Bragg reflections when viewed through the polarizing optical microscope and hence affect the electro-optic properties. So the optimization of chiral dopant concentration in nematic liquid crystal leads to control the transmission of polarized light through the microscope. Hence transmission based polarizing optical microscope is used for the characterization of helical pitch length in the optical texture. The unwinding of helical pitch was observed with the application of electric field which affects the intensity of photoluminescence

  1. Photoluminescence of acupoint 'Waiqiu' in human superficial fascia

    International Nuclear Information System (INIS)

    Zhang Yuan; Yan Xiaohui; Liu Chenglin; Dang Ruishan; Zhang Xinyi

    2006-01-01

    The spectral characters of an acupuncture point named 'Waiqiu' in superficial fascia tissue have been studied by photoluminescence (PL) spectroscopy under the excitation of 457.9 nm. The PL around 'Waiqiu' acupuncture point consists of two sub-bands resulting from the flavin adenine dinucleotide (FAD) and phospholipids, and the porphyrins (including purine, isoxanthopterin and tryptophan), respectively. More emission due to FAD and phospholipids is found inside the acupuncture effect area of 'Waiqiu' than its marginal or outside acupuncture regions. The ratio of emission intensity of FAD and phospholipids to one of porphyrins gradually decreases along the direction away from the center of the acupuncture point. It implies that the component proportion changes between FAD, phospholipids and porphyrins around the 'Waiqiu' acupuncture point. We suggest that there might be a certain relationship between redox function of FAD and 'Waiqiu' acupuncture effect

  2. Photoluminescence in large fluence radiation irradiated space silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hisamatsu, Tadashi; Kawasaki, Osamu; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Tsukamoto, Kazuyoshi

    1997-03-01

    Photoluminescence spectroscopy measurements were carried out for silicon 50{mu}m BSFR space solar cells irradiated with 1MeV electrons with a fluence exceeding 1 x 10{sup 16} e/cm{sup 2} and 10MeV protons with a fluence exceeding 1 x 10{sup 13} p/cm{sup 2}. The results were compared with the previous result performed in a relative low fluence region, and the radiation-induced defects which cause anomalous degradation of the cell performance in such large fluence regions were discussed. As far as we know, this is the first report which presents the PL measurement results at 4.2K of the large fluence radiation irradiated silicon solar cells. (author)

  3. Note: Photoluminescence measurement system for multi-junction solar cells.

    Science.gov (United States)

    Trespidi, F; Malchiodi, A; Farina, F

    2017-05-01

    We describe a photoluminescence spectroscopy system developed for studying phenomena of optical coupling in multiple-junction solar cells and processed/unprocessed wafers, under the high solar concentration levels typical of HCPV (High Concentration PhotoVoltaic) systems. The instrument operates at room temperature over two spectral ranges: 475 nm-1100 nm and 950 nm-1650 nm. Power densities exceeding 10 000 suns can be obtained on the sample. The system can host up to four compact focusable solid state laser sources, presently only three are mounted and operated at 450 nm, 520 nm, and 785 nm; they provide overlapped beams on the sample surface and can shine simultaneously the sample to study possible mutual interaction between the different junctions.

  4. Correlation of electrical conductivity and photoluminescence in nanoporous silicon

    International Nuclear Information System (INIS)

    Bouaicha, M.; Khardani, M.; Bessais, B.

    2006-01-01

    The effective electrical conductivity of p type porous silicon is determined both theoretically and experimentally for different porosities ranging from 30% to 80%. In this work, Effective Medium Approximation (EMA) model was used as a theoretical support. The porous silicon samples were prepared by the electrochemical etching method for different values of the anodic current. The porous material is assumed to be formed of three phases; vacuum, oxide and Si nanocrystallites. The analytical expression of the electrical conductivity of the Si nanocrystallites was established using the quantum confinement theory. This enables us to correlate the electrical conductivity of a PS layer, to the peak energy of its photoluminescence (PL) spectrum. A perfect agreement between the theoretical and the experimental electrical conductivity values was obtained for all prospected PS porosities. The results are discussed as regard to other works

  5. Formation Mechanism of Carbogenic Nanoparticles with Dual Photoluminescence Emission

    KAUST Repository

    Krysmann, Marta J.

    2012-01-18

    We present a systematic investigation of the formation mechanism of carbogenic nanoparticles (CNPs), otherwise referred to as C-dots, by following the pyrolysis of citric acid (CA)-ethanolamine (EA) precursor at different temperatures. Pyrolysis at 180 °C leads to a CNP molecular precursor with a strongly intense photoluminescence (PL) spectrum and high quantum yield formed by dehydration of CA-EA. At higher temperatures (230 °C) a carbogenic core starts forming and the PL is due to the presence of both molecular fluorophores and the carbogenic core. CNPs that exhibit mostly or exclusively PL arising from carbogenic cores are obtained at even higher temperatures (300 and 400 °C, respectively). Since the molecular fluorophores predominate at low pyrolysis temperatures while the carbogenic core starts forming at higher temperatures, the PL behavior of CNPs strongly depends on the conditions used for their synthesis. © 2011 American Chemical Society.

  6. Photoluminescence of phosphors for PDP with VUV excitation

    International Nuclear Information System (INIS)

    Lu, H.-C.; Chen, H.-K.; Tseng, T.-Y.; Kuo, W.-L.; Alam, M.S.; Cheng, B.-M.

    2005-01-01

    In a plasma display panel (PDP) He-Xe or Ne-Xe gaseous mixtures are subjected to electric discharge between two glass panels, so to generate VUV light. Red, green and blue phosphors absorb this VUV radiation and re-radiate the energy as visible light to produce the colors that appear on the screen. The phosphor plays an important role in the working of a PDP. To improve the efficiency of phosphors, we have established a photoluminescence end station coupled to the beam line of a synchrotron to study the luminescence of PDP phosphors. This luminescence is analyzed with a 0.32 m monochromator having maximum resolution 0.04 nm, and is monitored with a photomultiplier tube operated in a photon-counting mode. Preliminary data demonstrate the powerful performance of this end-station for studying PDP phosphors

  7. Blue-green photoluminescence in MCM-41 mesoporous nanotubes

    CERN Document Server

    Shen, J L; Lui, Y L; Cheng, P W; Cheng, C F

    2003-01-01

    Different photoluminescence (PL) techniques have been used to study the blue-green emission from siliceous MCM-41 nanotubes. It was found that the intensity of the blue-green PL is enhanced by rapid thermal annealing (RTA). This enhancement is explained by the generation of twofold-coordinated Si centres and non-bridging oxygen hole centres, in line with the surface properties of MCM-41. On the basis of the analysis of the PL following RTA, polarized PL, and PL excitation, we suggest that the triplet-to-singlet transition of twofold-coordinated silicon centres is responsible for the blue-green PL in MCM-41 nanotubes. (letter to the editor)

  8. Electro- and photoluminescence in ZnS crystals

    International Nuclear Information System (INIS)

    Klimenko, V.I.; Muradyan, A.M.; Solov'ev, A.V.; Shmurak, S.Z.

    1991-01-01

    Comperative study of spectral characteristics of electroluminescence (EL), induced by alternative electrical field (frequency-10kHz, average field intencity-10 2 -5x10 3 V/cm), and photoluminescence (PL) of ZnS-Cu microtwin crystals is carried out. It is shown, that PL and EL spectra differ within the hole temperature range of 77-300 K. Difference in the process of EL and PL temperature dependences is revealed. The EL minimum at T min ∼ 170-180K. The EL intensity at T min is by order lower than at 77 and 300 K. The PL dependence at the same time monotonically decreases by T increase. EL mechanism, explaining the experimental data obtained is proposed

  9. Growth orientation dependent photoluminescence of GaAsN alloys

    International Nuclear Information System (INIS)

    Han, Xiuxun; Tanaka, Tomohiro; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi; Sato, Shinichiro

    2012-01-01

    We report photoluminescence (PL) studies of both as-grown and electron-irradiated GaAsN epilayers on (311)A/B and (100) GaAs substrates. A long room-temperature (RT) PL lifetime, as well as an enhanced N incorporation, is observed in (311)B GaAsN epilayers as compared with (311)A and (100) samples. There is no direct correlation between the RT PL lifetime and the emission intensity from Ga vacancy complex detected at low temperature. The lifetime damage coefficient is relatively low for (311)B GaAsN. The irradiation-induced nonradiative recombination defects are suggested to be N- and/or As-related according to a geometrical analysis based on the tetrahedral coordination of GaAsN crystal.

  10. Enhancement of porous silicon photoluminescence property by lithium chloride treatment

    Science.gov (United States)

    Azaiez, Khawla; Zaghouani, Rabia Benabderrahmane; Khamlich, Saleh; Meddeb, Hosny; Dimassi, Wissem

    2018-05-01

    Porous silicon (PS) decorated by several nanostructured metal elements has still aroused interests as promising composites in many industrial applications. With the focus mainly on the synthesis, the aspect of stability against optical irradiation of such materials has so far not been thoroughly addressed. This work focuses primarily on the influence of lithium chloride solution (LiCl) treatment on the physical properties of PS. Variations in the structural and optoelectronic properties of PS were observed after immersion in (LiCl), as revealed by the obtained analyses. Moreover, enhanced photoluminescence (PL) property of the PS after passivation by lithium particles was clearly shown, and their presence on the surface of the microporous silicon was confirmed by FTIR spectroscopy and atomic force microscopy. An improvement of the minority carrier lifetime was also obtained, which was attributed to the decrease of the surface recombination velocity after LiCl treatment.

  11. Excitation dependence of photoluminescence in silicon quantum dots

    International Nuclear Information System (INIS)

    Wen Xiaoming; Lap Van Dao; Hannaford, Peter; Cho, E-C; Cho, Young H; Green, Martin A

    2007-01-01

    We have studied the optical properties of silicon quantum dots (QDs) embedded in a silicon oxide matrix using photoluminescence (PL) and time-resolved PL. A broad luminescence band is observed in the red region, in which the time evolution exhibits a stretched exponential decay. With increasing excitation intensity a significant saturation effect is observed. Direct electron-hole recombination is the dominant effect in the red band. A relatively narrow peak appears around 1.5 eV, which is attributed to the interface states overlapping with transition from the ground state of the silicon QDs. The saturation factor increases slowly with detection photon energy between 1.5 and 1.8 eV, which is attributed to the emission from zero-phonon electron-hole recombination. At higher photon energies the significantly increased saturation factor suggests a different emission mechanism, most likely the defect states from silicon, silicon oxide or silicon rich oxide

  12. Preparation, characterization and photoluminescence of nanocrystalline calcium molybdate

    International Nuclear Information System (INIS)

    Phuruangrat, Anukorn; Thongtem, Titipun; Thongtem, Somchai

    2009-01-01

    Nanocrystalline calcium molybdate was successfully synthesized from Ca(NO 3 ) 2 and Na 2 MoO 4 in ethylene glycol using a microwave radiation method. Body-centered tetragonal structured calcium molybdate with narrow nanosized distribution was detected using XRD, SAED and TEM. A diffraction pattern was also simulated and was found to be in accordance with those obtained from the experiment and JCPDS standard. Raman and FTIR spectra show the Mo-O prominent stretching bands in the [MoO 4 ] 2- tetrahedrons at 879.59 and 743-895 cm -1 , respectively. Photoluminescence emission of CaMoO 4 was detected at 477 nm, caused by the annihilation of a self-trapped excitons from the [MoO 4 ] 2- excited complex.

  13. Photoluminescence studies on porous silicon/polymer heterostructure

    International Nuclear Information System (INIS)

    Mishra, J.K.; Bhunia, S.; Banerjee, S.; Banerji, P.

    2008-01-01

    Hybrid devices formed by filling porous silicon with MEH-PPV or poly [2-methoxy-5(2-ethylhexyloxy-p-phenylenevinylene)] have been investigated in this work. Analyses of the structures by scanning electron microscopy (SEM) demonstrated that the porous silicon layer was filled by the polymer with no significant change of the structures except that the polymer was infiltrated in the pores. The photoluminescence (PL) of the structures at 300 K showed that the emission intensity was very high as compared with that of the MEH-PPV films on different substrates such as crystalline silicon (c-Si) and indium tin oxide (ITO). The PL peak in the MEH-PPV/porous silicon composite structure is found to be shifted towards higher energy in comparison with porous silicon PL. A number of possibilities are discussed to explain the observations

  14. Detection of Human Ig G Using Photoluminescent Porous Silicon Interferometer.

    Science.gov (United States)

    Cho, Bomin; Kim, Seongwoong; Woo, Hee-Gweon; Kim, Sungsoo; Sohn, Honglae

    2015-02-01

    Photoluminescent porous silicon (PSi) interferometers having dual optical properties, both Fabry-Pérot fringe and photolumincence (PL), have been developed and used as biosensors for detection of Human Immunoglobin G (Ig G). PSi samples were prepared by electrochemical etching of p-type silicon under white light exposure. The surface of PSi was characterized using a cold field emission scanning electron microscope. The sensor system studied consisted of a single layer of porous silicon modified with Protein A. The system was probed with various fragments of aqueous human immunoglobin G (Ig G) analyte. Both reflectivity and PL were simultaneously measured under the exposure of human Ig G. An increase of optical thickness and decrease of PL were obtained under the exposure of human Ig G. Detection limit of 500 fM was observed for the human Ig G.

  15. Photoluminescence and Raman spectroscopy of single diamond nanoparticle

    International Nuclear Information System (INIS)

    Sun, K. W.; Wang, J. Y.; Ko, T. Y.

    2008-01-01

    The article reports techniques that we have devised for immobilizing and allocating a single nanodiamond on the electron beam (E-beam) lithography patterned semiconductor substrate. By combining the E-beam patterned smart substrate with the high throughput of a confocal microscope, we are able to overcome the limitation of the spatial resolution of optical techniques (∼1 μm) to obtain the data on individual nano-object with a size range between 100 and 35 nm. We have observed a broad photoluminescence centered at about 700 nm from a single nanodiamond which is due to the defects, vacancies in the nanodiamonds, and the disordered carbon layer covered on the nanodiamond surface. We also observe red-shift in energy and broadening in linewidth of the sp 3 bonding Raman peak when the size of the single nanodiamond is reduced due to the phonon-confinement effects.

  16. Taoism and Deep Ecology.

    Science.gov (United States)

    Sylvan, Richard; Bennett, David

    1988-01-01

    Contrasted are the philosophies of Deep Ecology and ancient Chinese. Discusses the cosmology, morality, lifestyle, views of power, politics, and environmental philosophies of each. Concludes that Deep Ecology could gain much from Taoism. (CW)

  17. Blue photoluminescence in Ti-doped alkaline-earth stannates

    International Nuclear Information System (INIS)

    Yamashita, Takahiro; Ueda, Kazushige

    2007-01-01

    Blue photoluminescence properties of Ti-doped alkaline-earth stannates, A 2 (Sn 1- x Ti x )O 4 (A=Ca, Sr, Ba) (x=0.005-0.15), were examined at room temperature. These stannates showed intense broad emission bands peaking at 445 nm for Ca 2 SnO 4 , at 410 nm for Sr 2 SnO 4 , and at 425 nm for Ba 2 SnO 4 under UV excitation. Emission intensities were relatively insensitive to Ti concentration and no sharp concentration quenching was observed. Mixing alkaline-earth ions in the crystal structures did not increase the emission intensities in the A 2 (Sn 1- x Ti x )O 4 system. The excitation spectra of these stannates exhibited broad bands just below the fundamental absorption edges, implying that luminescence centers do not consist of the component elements in the host materials. It was suggested that the isolated TiO 6 complexes are possible luminescence centers in these materials, as previously proposed in other Ti-doped stannates such as Mg 2 SnO 4 and Y 2 Sn 2 O 7 . - Graphical abstract: Blue photoluminescence properties of Ti-doped alkaline-earth stannates, A 2 (Sn 1- x Ti x )O 4 (A=Ca, Sr, Ba) (x=0.005-0.15), were examined at room temperature. These stannates showed intense broad emission bands peaking at 445 nm for Ca 2 SnO 4 , at 410 nm for Sr 2 SnO 4 , and at 425 nm for Ba 2 SnO 4 under UV excitation

  18. Reversible photoluminescence in spiropyran-modified porous silicon

    International Nuclear Information System (INIS)

    Lee, Chen-Yu; Hu, Chih-Hsuan; Cheng, Sheng-Lin; Chu, Chih-Chien; Hsiao, Vincent K.S.

    2015-01-01

    Spiropyran-modified porous silicon (spiro-PS) was used for the first time as an organic–inorganic hybrid material by using reversible photoluminescence (PL). Before spiropyran modification, the peak wavelength from PS was approximately 600 nm. Subsequent spiropyran modification strongly quenched the PL intensity, from 15,000 to 2000 counts. However, under UV light irradiation, the PL intensity from spiro-PS was increased gradually to 20,000 counts because of the photoinduced ring opening from a colorless spiropyran (SP-form) to a colored merocyanine (MC-form). Furthermore, the resulting peak wavelength of the PL of an MC–PS sample red-shifted from 600 to 650 nm, and the PL intensity was higher than that of unmodified PS. Because the fluorescence emission band (500–700 nm) of PS substantially overlapped the absorption band (500–700 nm) of the MC-form of spiropyran, the energy transfer from the PS (donor) to the open-ring-state MC-form (acceptor) occurs efficiently. The intensity of the PL from spiro-PS can be reversibly modulated using a heat stimulus. The current demonstrations have potential in reversible solid-state lighting or data storage applications. - Highlights: • Spiropyran-modified porous silicon (spiro-PS) was used for the first time as an organic–inorganic hybrid material with reversible photoluminescence (PL). • UV light irradiation make PL intensity from spiro-PS increased due to the photo-induced ring opening process. • The energy transfer from the PS (donor) to the open-ring state of spiropyran (acceptor) was to be efficient due to the fluorescence emission band of PS substantially overlapped with the absorption band of the ring-opened spiro. • The intensity of the PL from spiro-PS can be reversibly modulated using a heat stimulus

  19. Nanomedicine photoluminescence crystal-inspired brain sensing approach

    Science.gov (United States)

    Fang, Yan; Wang, Fangzhen; Wu, Rong

    2018-02-01

    Precision sensing needs to overcome a gap of a single atomic step height standard. In response to the cutting-edge challenge, a heterosingle molecular nanomedicine crystal was developed wherein a nanomedicine crystal height less than 1 nm was designed and selfassembled on a substrate of either a highly ordered and freshly separated graphite or a N-doped silicon with hydrogen bonding by a home-made hybrid system of interacting single bioelectron donor-acceptor and a single biophoton donor-acceptor according to orthogonal mathematical optimization scheme, and an atomic spatial resolution conducting atomic force microscopy (C-AFM) with MHz signal processing by a special transformation of an atomic force microscopy (AFM) and a scanning tunneling microscopy (STM) were employed, wherein a z axis direction UV-VIS laser interferometer and a feedback circuit were used to achieve the minimized uncertainty of a micro-regional structure height and its corresponding local differential conductance quantization (spin state) process was repeatedly measured with a highly time resolution, as well as a pulsed UV-VIS laser micro-photoluminescence (PL) spectrum with a single photon resolution was set up by traceable quantum sensing and metrology relied up a quantum electrical triangle principle. The coupling of a single bioelectron conducting, a single biophoton photoluminescence, a frequency domain temporal spin phase in nanomedicine crystal-inspired sensing methods and sensor technologies were revealed by a combination of C-AFM and PL measurement data-based mathematic analyses1-3, as depicted in Figure 1 and repeated in nanomedicine crystals with a single atomic height. It is concluded that height-current-phase uncertainty correlation pave a way to develop a brain imaging and a single atomic height standard, quantum sensing, national security, worldwide impact1-3 technology and beyond.

  20. Tilted dipole model for bias-dependent photoluminescence pattern

    Energy Technology Data Exchange (ETDEWEB)

    Fujieda, Ichiro, E-mail: fujieda@se.ritsumei.ac.jp; Suzuki, Daisuke; Masuda, Taishi [Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu 525-8577 (Japan)

    2014-12-14

    In a guest-host system containing elongated dyes and a nematic liquid crystal, both molecules are aligned to each other. An external bias tilts these molecules and the radiation pattern of the system is altered. A model is proposed to describe this bias-dependent photoluminescence patterns. It divides the liquid crystal/dye layer into sub-layers that contain electric dipoles with specific tilt angles. Each sub-layer emits linearly polarized light. Its radiation pattern is toroidal and is determined by the tilt angle. Its intensity is assumed to be proportional to the power of excitation light absorbed by the sub-layer. This is calculated by the Lambert-Beer's Law. The absorption coefficient is assumed to be proportional to the cross-section of the tilted dipole moment, in analogy to the ellipsoid of refractive index, to evaluate the cross-section for each polarized component of the excitation light. Contributions from all the sub-layers are added to give a final expression for the radiation pattern. Self-absorption is neglected. The model is simplified by reducing the number of sub-layers. Analytical expressions are derived for a simple case that consists of a single layer with tilted dipoles sandwiched by two layers with horizontally-aligned dipoles. All the parameters except for the tilt angle can be determined by measuring transmittance of the excitation light. The model roughly reproduces the bias-dependent photoluminescence patterns of a cell containing 0.5 wt. % coumarin 6. It breaks down at large emission angles. Measured spectral changes suggest that the discrepancy is due to self-absorption and re-emission.

  1. Ultraviolet Spectroscopy of Asteroid(4) Vesta

    Science.gov (United States)

    Li, Jian-Yang; Bodewits, Dennis; Feaga, Lori M.; Landsman, Wayne; A'Hearn, Michael F.; Mutchler, Max J.; Russell, Christopher T.; McFadden, Lucy A.; Raymond, Carol A.

    2011-01-01

    We report a comprehensive review of the UV-visible spectrum and rotational lightcurve of Vesta combining new observations by Hubble Space Telescope and Swift with archival International Ultraviolet Explorer observations. The geometric albedos of Vesta from 220 nm to 953 nm arc derived by carefully comparing these observations from various instruments at different times and observing geometries. Vesta has a rotationally averaged geometric albedo of 0.09 at 250 nm, 0.14 at 300 nm, 0.26 at 373 nm, 0.38 at 673 nm, and 0.30 at 950 nm. The linear spectral slope in the ultraviolet displays a sharp minimum ncar sub-Earth longitude of 20deg, and maximum in the eastern hemisphere. This is completely consistent with the distribution of the spectral slope in the visible wavelength. The uncertainty of the measurement in the ultraviolet is approx.20%, and in the visible wavelengths better than 10%. The amplitude of Vesta's rotational lightcurves is approx.10% throughout the range of wavelengths we observed, but is smaller at 950 nm (approx.6%) ncar the 1-micron mafic band center. Contrary to earlier reports, we found no evidence for any difference between the phasing of the ultraviolet and visible/ncar-infrared lightcurves with respect to sub-Earth longitude. Vesta's average spectrum between 220 and 950 nm can well be described by measured reflectance spectra of fine particle howardite-like materials of basaltic achondrite meteorites. Combining this with the in-phase behavior of the ultraviolet, visible. and ncar-infrared lightcurves, and the spectral slopes with respect to the rotational phase, we conclude that there is no global ultraviolet/visible reversal on Vesta. Consequently, this implies lack of global space weathering on Vesta. Keyword,: Asteroid Vesta; Spectrophotometry; Spectroscopy; Ultraviolet observations; Hubble Space Telescope observations

  2. Deep Incremental Boosting

    OpenAIRE

    Mosca, Alan; Magoulas, George D

    2017-01-01

    This paper introduces Deep Incremental Boosting, a new technique derived from AdaBoost, specifically adapted to work with Deep Learning methods, that reduces the required training time and improves generalisation. We draw inspiration from Transfer of Learning approaches to reduce the start-up time to training each incremental Ensemble member. We show a set of experiments that outlines some preliminary results on some common Deep Learning datasets and discuss the potential improvements Deep In...

  3. Enhancement of the photoluminescence in CdSe quantum dot–polyvinyl alcohol composite by light irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Borkovska, L., E-mail: bork@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauky 41, 03028 Kyiv (Ukraine); Korsunska, N.; Stara, T.; Gudymenko, O.; Venger, Ye. [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauky 41, 03028 Kyiv (Ukraine); Stroyuk, O.; Raevska, O. [L. Pysarzhevsky Institute of Physical Chemistry, NAS of Ukraine, pr. Nauky 31, 03028 Kyiv (Ukraine); Kryshtab, T., E-mail: kryshtab@gmail.com [Instituto Politécnico Nacional – ESFM, Av. IPN, Ed.9 U.P.A.L.M., 07738 Mexico D.F. (Mexico)

    2013-09-15

    The effect of photo-induced enhancement (more than a tenfold) of room temperature deep-trap photoluminescence (PL) in CdSe quantum dots (QDs) embedded in polyvinyl alcohol (PVA) film has been found and investigated by the PL and X-ray diffraction methods. The effect is observed under illumination of the QD/PVA composite with LED's light of 409 or 470 nm at elevated temperatures and is shown to be caused by an increase of the activation energy of thermal quenching of defect-related PL. It is shown that thermal annealing of the composite by itself stimulates polymer crystallization and produces a small increase in the intensity of both the band-edge and defect-related PL bands of CdSe QDs. It is found that the effect of illumination decreases when the annealing temperature increases from 90 °C to 120 °C because thermal annealing at 120 °C per se results in strong enhancement of room temperature deep-trap PL. The effect of photo-induced enhancement of defect-related PL is found to be irreversible and is assumed to be related to the change of QD surface defect passivation or surface defect rearrangement. This is ascribed to partial destruction of PVA matrix as a result of interaction of QD/PVA interface with photocarriers generated in the QDs due to LED's light absorption.

  4. Deep Space Telecommunications

    Science.gov (United States)

    Kuiper, T. B. H.; Resch, G. M.

    2000-01-01

    The increasing load on NASA's deep Space Network, the new capabilities for deep space missions inherent in a next-generation radio telescope, and the potential of new telescope technology for reducing construction and operation costs suggest a natural marriage between radio astronomy and deep space telecommunications in developing advanced radio telescope concepts.

  5. Detection of certain minerals of uranium, zinc, lead and other metals using photoluminescence

    International Nuclear Information System (INIS)

    Seigel, H.O.; Robbins, J.C.

    1980-01-01

    We have discovered that certain photoluminescent minerals of uranium, lead, zinc, fluorine, tungsten and other elements which may naturally occur at the surface of the earth can be selectively detected in the presence of most other photoluminescent minerals and organic materials which are likely to occur at the earth's surface. The base of selective ldetection is the discovery that the lifetimes of photoluminescent emission of materials in the latter class are much shorter than the lifetimes of photoluminescent emission of materials in the former class. This invention utilizes this discovery in the detection of minerals of uranium, zinc, lead, flourine, tungsten, molybdenum, mercury and other elements. In one embodiment of the invention, using a laser or other short duration source of optical excitation, measurements of the photoluminescent response of the earth are made at times sufficiently long for the photoluminescence of other common and unwanted sources to have substantially decayed, thereby selectively detection and identifying certain minerals of potiential economic interest. In another embodiment a source of light is modulated at a predetermined frequency and the photoluminescent response of the earth which is out-of-phase with the source is measured. In a third embodiment this source of light may be incident solar radiation after passage through asuitable modulator

  6. Ultraviolet radiation therapy and UVR dose models

    Energy Technology Data Exchange (ETDEWEB)

    Grimes, David Robert, E-mail: davidrobert.grimes@oncology.ox.ac.uk [School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9, Ireland and Cancer Research UK/MRC Oxford Institute for Radiation Oncology, Gray Laboratory, University of Oxford, Old Road Campus Research Building, Oxford OX3 7DQ (United Kingdom)

    2015-01-15

    Ultraviolet radiation (UVR) has been an effective treatment for a number of chronic skin disorders, and its ability to alleviate these conditions has been well documented. Although nonionizing, exposure to ultraviolet (UV) radiation is still damaging to deoxyribonucleic acid integrity, and has a number of unpleasant side effects ranging from erythema (sunburn) to carcinogenesis. As the conditions treated with this therapy tend to be chronic, exposures are repeated and can be high, increasing the lifetime probability of an adverse event or mutagenic effect. Despite the potential detrimental effects, quantitative ultraviolet dosimetry for phototherapy is an underdeveloped area and better dosimetry would allow clinicians to maximize biological effect whilst minimizing the repercussions of overexposure. This review gives a history and insight into the current state of UVR phototherapy, including an overview of biological effects of UVR, a discussion of UVR production, illness treated by this modality, cabin design and the clinical implementation of phototherapy, as well as clinical dose estimation techniques. Several dose models for ultraviolet phototherapy are also examined, and the need for an accurate computational dose estimation method in ultraviolet phototherapy is discussed.

  7. Ultraviolet radiation therapy and UVR dose models

    International Nuclear Information System (INIS)

    Grimes, David Robert

    2015-01-01

    Ultraviolet radiation (UVR) has been an effective treatment for a number of chronic skin disorders, and its ability to alleviate these conditions has been well documented. Although nonionizing, exposure to ultraviolet (UV) radiation is still damaging to deoxyribonucleic acid integrity, and has a number of unpleasant side effects ranging from erythema (sunburn) to carcinogenesis. As the conditions treated with this therapy tend to be chronic, exposures are repeated and can be high, increasing the lifetime probability of an adverse event or mutagenic effect. Despite the potential detrimental effects, quantitative ultraviolet dosimetry for phototherapy is an underdeveloped area and better dosimetry would allow clinicians to maximize biological effect whilst minimizing the repercussions of overexposure. This review gives a history and insight into the current state of UVR phototherapy, including an overview of biological effects of UVR, a discussion of UVR production, illness treated by this modality, cabin design and the clinical implementation of phototherapy, as well as clinical dose estimation techniques. Several dose models for ultraviolet phototherapy are also examined, and the need for an accurate computational dose estimation method in ultraviolet phototherapy is discussed

  8. Solar ultraviolet irradiance variations: a review

    International Nuclear Information System (INIS)

    Lean, J.

    1987-01-01

    Despite the geophysical importance of solar ultraviolet radiation, specific aspects of its temporal variations have not yet been adequately determined experimentally, nor are the mechanisms for the variability completely understood. Satellite observations have verified the reality of solar ultraviolet irradiance variations over time scales of days and months, and model calculations have confirmed the association of these short-term variations with the evolution and rotation of regions of enhanced magnetic activity on the solar disc. However, neither rocket nor satellite measurements have yet been made with sufficient accuracy and regularity to establish unequivocally the nature of the variability over the longer time of the 11-year solar cycle. The comparative importance for the long-term variations of local regions of enhanced magnetic activity and global scale activity perturbations is still being investigated. Solar ultraviolet irradiance variations over both short and long time scales are reviewed, with emphasis on their connection to solar magnetic activity. Correlations with ground-based measures of solar variability are examined because of the importance of the ground-based observations as historical proxies of ultraviolet irradiance variations. Current problems in understanding solar ultraviolet irradiance variations are discussed, and the measurements planned for solar cycle 22, which may resolve these problems, are briefly described. copyright American Geophysical Union 1987

  9. Characterization of failure modes in deep UV and deep green LEDs utilizing advanced semiconductor localization techniques.

    Energy Technology Data Exchange (ETDEWEB)

    Tangyunyong, Paiboon; Miller, Mary A.; Cole, Edward Isaac, Jr.

    2012-03-01

    We present the results of a two-year early career LDRD that focused on defect localization in deep green and deep ultraviolet (UV) light-emitting diodes (LEDs). We describe the laser-based techniques (TIVA/LIVA) used to localize the defects and interpret data acquired. We also describe a defect screening method based on a quick electrical measurement to determine whether defects should be present in the LEDs. We then describe the stress conditions that caused the devices to fail and how the TIVA/LIVA techniques were used to monitor the defect signals as the devices degraded and failed. We also describe the correlation between the initial defects and final degraded or failed state of the devices. Finally we show characterization results of the devices in the failed conditions and present preliminary theories as to why the devices failed for both the InGaN (green) and AlGaN (UV) LEDs.

  10. Mutations induced by ultraviolet light

    International Nuclear Information System (INIS)

    Pfeifer, Gerd P.; You, Young-Hyun; Besaratinia, Ahmad

    2005-01-01

    The different ultraviolet (UV) wavelength components, UVA (320-400 nm), UVB (280-320 nm), and UVC (200-280 nm), have distinct mutagenic properties. A hallmark of UVC and UVB mutagenesis is the high frequency of transition mutations at dipyrimidine sequences containing cytosine. In human skin cancers, about 35% of all mutations in the p53 gene are transitions at dipyrimidines within the sequence 5'-TCG and 5'-CCG, and these are localized at several mutational hotspots. Since 5'-CG sequences are methylated along the p53 coding sequence in human cells, these mutations may be derived from sunlight-induced pyrimidine dimers forming at sequences that contain 5-methylcytosine. Cyclobutane pyrimidine dimers (CPDs) form preferentially at dipyrimidines containing 5-methylcytosine when cells are irradiated with UVB or sunlight. In order to define the contribution of 5-methylcytosine to sunlight-induced mutations, the lacI and cII transgenes in mouse fibroblasts were used as mutational targets. After 254 nm UVC irradiation, only 6-9% of the base substitutions were at dipyrimidines containing 5-methylcytosine. However, 24-32% of the solar light-induced mutations were at dipyrimidines that contain 5-methylcytosine and most of these mutations were transitions. Thus, CPDs forming preferentially at dipyrimidines with 5-methylcytosine are responsible for a considerable fraction of the mutations induced by sunlight in mammalian cells. Using mouse cell lines harboring photoproduct-specific photolyases and mutational reporter genes, we showed that CPDs (rather than 6-4 photoproducts or other lesions) are responsible for the great majority of UVB-induced mutations. An important component of UVB mutagenesis is the deamination of cytosine and 5-methylcytosine within CPDs. The mutational specificity of long-wave UVA (340-400 nm) is distinct from that of the shorter wavelength UV and is characterized mainly by G to T transversions presumably arising through mechanisms involving oxidized DNA

  11. Examination of electronic structure differences between CIGSSe and CZTSSe by photoluminescence study

    Energy Technology Data Exchange (ETDEWEB)

    Tai, Kong Fai; Huan, Cheng Hon Alfred [Division of Physics and Applied Physics, School of Physical & Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371 (Singapore); Gershon, Talia; Gunawan, Oki, E-mail: ogunawa@us.ibm.com [IBM T.J. Watson Research Center, PO Box 218, Yorktown Heights, New York 10598 (United States)

    2015-06-21

    In this paper, we elaborate on the interpretation and use of photoluminescence (PL) measurements as they relate to the “donor/acceptor” and “electrostatic potential fluctuations” models for compensated semiconductors. Low-temperature (7 K) PL measurements were performed on high-efficiency Cu(In,Ga)(S,Se){sub 2} and two Cu{sub 2}ZnSn(S,Se){sub 4} solar cells with high- and low-S/(S + Se) ratio, all fabricated by a hydrazine solution-processing method. From excitation-dependent PL, the total defect density (which include radiative and non-radiative defects) within the band gap (E{sub g}) was estimated for each material and the consequent depth of the electrostatic potential fluctuation (γ) was calculated. The quasi-donor-acceptor pair (QDAP) density was estimated from the blue-shift magnitude of the QDAP PL peak position in power-dependent PL spectra. As a further verification, we show that the slope of the lifetime as a function of photon energies (dτ/dE) is consistent with our estimate for the magnitude of γ. Lastly, the energetic depth of the QDAP defects is examined by studying the spectral evolution of the PL as a function of temperature. The shallow defect levels in CIGSSe resulted in a significant blue-shift of the PL peak with temperature, whereas no obvious shift was observed for either CZTSSe sample, indicating an increase in the depth of the defects. Further improvement on Cu{sub 2}ZnSn(S,Se){sub 4} solar cell should focus on reducing the sub-E{sub g} defect density and avoiding the formation of deep defects.

  12. One-step synthesis and properties of monolithic photoluminescent ruby colored cuprous oxide antimony oxide glass nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Som, Tirtha [Glass Science and Technology Section, Glass Division, Central Glass and Ceramic Research Institute, Council of Scientific and Industrial Research (CSIR, India), 196, Raja S.C. Mullick Road, Kolkata 700032 (India); Karmakar, Basudeb, E-mail: basudebk@cgcri.res.in [Glass Science and Technology Section, Glass Division, Central Glass and Ceramic Research Institute, Council of Scientific and Industrial Research (CSIR, India), 196, Raja S.C. Mullick Road, Kolkata 700032 (India)

    2011-04-14

    Research highlights: > Single-step synthesis of Cu{sub 2}O, Cu{sub y}Sb{sub 2-x}(O,OH){sub 6-7} (y {<=} 2, x {<=} 1) and Cu nanocrystals co-doped novel antimony oxide glass hybrid nanocomposites. > Yellow and orange colored nanocomposites shows size-controlled band gap shift of Cu{sub 2}O. > Red nanocomposite exhibits surface plasmon resonance band due to metallic Cu. > They exhibit broad deep-red photoluminescence emission under various UV excitation wavelengths. - Abstract: Cuprous oxide (Cu{sub 2}O) antimony glass (K{sub 2}O-B{sub 2}O{sub 3}-Sb{sub 2}O{sub 3}) monolithic nanocomposites having brilliant yellow to ruby red color have been synthesized by a single-step melt-quench technique involving in situ thermochemical reduction of Cu{sup 2+} (CuO) by the reducing glass matrix without using any external reducing agent. The X-ray diffraction (XRD), infrared transmission and reflection spectra, and selected area electron diffraction analysis support the reduction of Cu{sup 2+} to Cu{sup +} with the formation of Cu{sub 2}O nanoclusters along with Cu{sub y}Sb{sub 2-x}(O,OH){sub 6-7} (y {<=} 2, x {<=} 1) nanocrystalline phases while Cu{sup 0} nanoclusters are formed at very high Cu concentration. The UV-vis spectra of the yellow and orange colored nanocomposites show size-controlled band gap shift of the semiconductor (Cu{sub 2}O) nanocrystallites embedded in the glasses while the red nanocomposite exhibits surface plasmon resonance band at 529 nm due to metallic Cu. Transmission electron microscopic image advocates the formation of nanocystallites (5-42 nm). Photoluminescence emission studies show broad red emission band around 626 nm under various excitation wavelengths from 210 to 270 nm.

  13. METHOD OF NON-CONTACT PHOTOLUMINESCENT DIAGNOSTICS OF THE EYE FIBROUS TUNIC CONDITION

    Directory of Open Access Journals (Sweden)

    S. Yu. Petrov

    2018-01-01

    Full Text Available Non-contact optical diagnostics of structural disorders of the eye has a number of advantages: high speed, accuracy and a large range of parameters available for analysis. The paper presents the results of studies of the photoluminescence of the fibrous tunic of the eye, excited by polarized light, depending on the intraocular pressure. In the experiments, isolated de-epithelized eyes of the rabbit were used, inside of which pressure up to 50 mm Hg was artificially created. Under these conditions, the cornea and sclera were illuminated with linearly polarized light at wavelengths of 250, 350 and 450 nm, exciting photoluminescence in the wavelength range up to 700 nm. Cross and co-polarized photoluminescence spectra excited by linearly polarized light were obtained. It has been established that, when excited by polarized light, the photoluminescence of the cornea is partially polarized. Depending on the wavelength of the photoluminescence, the degree of polarization varies from 0.2 to 0.35. It is shown that the degree of polarization of the photoluminescence of the cornea of the eye upon excitation by linearly polarized light can be used as a measurable parameter for assessing the physiological state of the eye. It is shown that the photoluminescence spectrum consists of two bands with maxima near 460-470 and 430-440 nm. These bands are assigned, respectively, to pyridinnucleotides and glycosylated collagen. A significant contribution can be made by the epithelium of the eye, which contains riboflavin with characteristic absorption bands near 450 and 365 nm. When excited at 450 nm, the photoluminescence maximum is located near 540 nm, which corresponds to the spectrum of fluorophores in the endothelium and epithelium. The spectrum of photoluminescence upon excitation at a wavelength of 250 nm can be attributed to tryptophan located in the intraocular lens.

  14. Mutagenesis of Trichoderma Viride by Ultraviolet and Plasma

    International Nuclear Information System (INIS)

    Yao Risheng; Li Manman; Deng Shengsong; Hu Huajia; Wang Huai; Li Fenghe

    2012-01-01

    Considering the importance of a microbial strain capable of increased cellulase production, a mutant strain UP4 of Trichoderma viride was developed by ultraviolet (UV) and plasma mutation. The mutant produced a 21.0 IU/mL FPase which was 98.1% higher than that of the parent strain Trichoderma viride ZY-1. In addition, the effect of ultraviolet and plasma mutagenesis was not merely simple superimposition of single ultraviolet mutation and single plasma mutation. Meanwhile, there appeared a capsule around some of the spores after the ultraviolet and plasma treatment, namely, the spore surface of the strain became fuzzy after ultraviolet or ultraviolet and plasma mutagenesis.

  15. Mutagenesis of Trichoderma Viride by Ultraviolet and Plasma

    Science.gov (United States)

    Yao, Risheng; Li, Manman; Deng, Shengsong; Hu, Huajia; Wang, Huai; Li, Fenghe

    2012-04-01

    Considering the importance of a microbial strain capable of increased cellulase production, a mutant strain UP4 of Trichoderma viride was developed by ultraviolet (UV) and plasma mutation. The mutant produced a 21.0 IU/mL FPase which was 98.1% higher than that of the parent strain Trichoderma viride ZY-1. In addition, the effect of ultraviolet and plasma mutagenesis was not merely simple superimposition of single ultraviolet mutation and single plasma mutation. Meanwhile, there appeared a capsule around some of the spores after the ultraviolet and plasma treatment, namely, the spore surface of the strain became fuzzy after ultraviolet or ultraviolet and plasma mutagenesis.

  16. Deep learning with Python

    CERN Document Server

    Chollet, Francois

    2018-01-01

    DESCRIPTION Deep learning is applicable to a widening range of artificial intelligence problems, such as image classification, speech recognition, text classification, question answering, text-to-speech, and optical character recognition. Deep Learning with Python is structured around a series of practical code examples that illustrate each new concept introduced and demonstrate best practices. By the time you reach the end of this book, you will have become a Keras expert and will be able to apply deep learning in your own projects. KEY FEATURES • Practical code examples • In-depth introduction to Keras • Teaches the difference between Deep Learning and AI ABOUT THE TECHNOLOGY Deep learning is the technology behind photo tagging systems at Facebook and Google, self-driving cars, speech recognition systems on your smartphone, and much more. AUTHOR BIO Francois Chollet is the author of Keras, one of the most widely used libraries for deep learning in Python. He has been working with deep neural ...

  17. Characteristics of exciton photoluminescence kinetics in low-dimensional silicon structures

    CERN Document Server

    Sachenko, A V; Manojlov, E G; Svechnikov, S V

    2001-01-01

    The time-resolved visible photoluminescence of porous nanocrystalline silicon films obtained by laser ablation have been measured within the temperature range 90-300 K. A study has been made of the interrelationship between photoluminescence characteristics (intensity, emission spectra, relaxation times, their temperature dependencies and structural and dielectric properties (size and shapes of Si nanocrystals, oxide phase of nanocrystal coating, porosity). A photoluminescence model is proposed that describes photon absorption and emission occurring in quantum-size Si nanocrystals while coupled subsystems of electron-hole pairs and excitons take part in the recombination. Possible excitonic Auger recombination mechanism in low-dimensional silicon structures is considered

  18. Deep learning evaluation using deep linguistic processing

    OpenAIRE

    Kuhnle, Alexander; Copestake, Ann

    2017-01-01

    We discuss problems with the standard approaches to evaluation for tasks like visual question answering, and argue that artificial data can be used to address these as a complement to current practice. We demonstrate that with the help of existing 'deep' linguistic processing technology we are able to create challenging abstract datasets, which enable us to investigate the language understanding abilities of multimodal deep learning models in detail, as compared to a single performance value ...

  19. Synthesis, structure and photoluminescence of (PLAGH)2[ZnCl4] and comparative analysis of photoluminescence properties with tris(2,2′-bipyridine)ruthenium(II)

    International Nuclear Information System (INIS)

    Radanović, Mirjana M.; Jelić, Miodrag G.; Romčević, Nebojša Ž.; Boukos, Nikos; Vojinović-Ješić, Ljiljana S.; Leovac, Vukadin M.; Hadžić, Branka B.; Bajac, Branimir M.; Nađ, Laslo F.; Chandrinou, Chrysoula; Baloš, Sebastian S.

    2015-01-01

    Highlights: • New zinc(II) complex with pyridoxalaminoguanidine was synthesized. • The enhancement of the photoluminescence due to the compound formation was achieved. • Very high photoluminescence of Zn(II) compound was noticed. • Comparative analysis of photoluminescence with tris(2,2′-bipyridine) ruthenium(II) was provided. - Abstract: The first compound of zinc(II) containing pyridoxalaminoguanidine has been synthesized and characterized by elemental analysis, infrared spectra, conductometric measurements and X-ray crystallography. Single crystals of the compound were obtained in the reaction of methanolic solution of zinc(II) chloride and pyridoxalaminoguanidine hydrochloride. In this compound the coordination of chelate ligand is absent and tetrachlorido complex of zinc(II) with pyridoxalaminuguanidinium cation as contraion is obtained. Photoluminescence spectra were measured. Lorentzian multipeak technique was used to determine peak wavelengths and their intensities. Photoluminescence spectroscopy upon 325, 488 and 514 nm laser excitation light was used to obtain results. This novel compound of zinc(II) was compared to the well-known organic light emitting diode material—ruthenium(II) complex with bypiridine i.e., tris(2,2′-bipyridine)ruthenium(II), under the same circumstances and the identical experimental setup. A scheme of energy levels and transitions is proposed to explain the obtained experimental results

  20. The ultraviolet variations of iota Cas

    Science.gov (United States)

    Molnar, M. R.; Mallama, A. D.; Soskey, D. G.; Holm, A. V.

    1976-01-01

    The Ap variable star iota Cas was observed with the photometers on OAO-2 covering the spectral range 1430-4250 A. The ultraviolet light curves show a double wave with primary minimum and maximum at phase ? 0.00 and 0.35, respectively. Secondary minimum light is at phase ? 0.65 with secondary maximum at phase ? 0.85. The light curves longward of 3150 A vary in opposition to those shortward of this 'null region'. Ground-based coude spectra show that the Fe II and Cr II line strengths have a double-wave variation such that maximum strength occurs at minimum ultraviolet light. We suggest that the strong ultraviolet opacities due to photoionization and line blanketing by these metals may cause the observed photometric variations. We have also constructed an oblique-rotator model which shows iron and chromium lying in a great circle band rather than in circular spots.

  1. JUDE: An Ultraviolet Imaging Telescope pipeline

    Science.gov (United States)

    Murthy, J.; Rahna, P. T.; Sutaria, F.; Safonova, M.; Gudennavar, S. B.; Bubbly, S. G.

    2017-07-01

    The Ultraviolet Imaging Telescope (UVIT) was launched as part of the multi-wavelength Indian AstroSat mission on 28 September, 2015 into a low Earth orbit. A 6-month performance verification (PV) phase ended in March 2016, and the instrument is now in the general observing phase. UVIT operates in three channels: visible, near-ultraviolet (NUV) and far-ultraviolet (FUV), each with a choice of broad and narrow band filters, and has NUV and FUV gratings for low-resolution spectroscopy. We have written a software package (JUDE) to convert the Level 1 data from UVIT into scientifically useful photon lists and images. The routines are written in the GNU Data Language (GDL) and are compatible with the IDL software package. We use these programs in our own scientific work, and will continue to update the programs as we gain better understanding of the UVIT instrument and its performance. We have released JUDE under an Apache License.

  2. The ultraviolet telescope on the Astron satellite

    International Nuclear Information System (INIS)

    Boyarchuk, A.A.

    1987-01-01

    On 23 March 1983 in the USSR, the Astron astrophysical satellite, with the largest ultraviolet telescope (the UVT) in the world (main mirror diameter 80 cm) and a set of X-ray instruments on board was placed in a high-apogee orbit. The design of the ultraviolet telescope and the results of some of the observations carried out with it are described here. The X-ray instruments are discussed in a separate article. The ultraviolet telescope on the Astron astrophysical satellite is a result of the joint efforts of scientists and engineers at the Crimean Astrophysical Observatory (Academy of Sciences of the USSR), the Byurakan Astrophysical Observatory (Academy of Sciences of the Armenian USSR), and several industrial enterprises in our country. The Laboratoire d'Astronomie Spatiale (CNRS, Marseille, France) played a large role in building the spectrometer for the UVT

  3. Indium nanoparticles for ultraviolet surface-enhanced Raman spectroscopy

    Science.gov (United States)

    Das, Rupali; Soni, R. K.

    2018-05-01

    Ultraviolet Surface-enhanced Raman spectroscopy (UVSERS) has emerged as an efficient molecular spectroscopy technique for ultra-sensitive and ultra-low detection of analyte concentration. The generic SERS substrates based on gold and silver nanostructures have been extensively explored for high local electric field enhancement only in visible-NIR region of the electromagnetic spectrum. The template synthesis of controlled nanoscale size metallic nanostructures supporting localized surface plasmon resonance (LSPR) in the UV region have been recently explored due to their ease of synthesis and potential applications in optoelectronic, catalysis and magnetism. Indium (In0) nanoparticles exhibit active surface plasmon resonance (SPR) in ultraviolet (UV) and deep-ultaviolet (DUV) region with optimal absorption losses. This extended accessibility makes indium a promising material for UV plasmonic, chemical sensing and more recently in UV-SERS. In this work, spherical indium nanoparticles (In NPs) were synthesized by modified polyol reduction method using NaBH4 having local surface plasmon resonance near 280 nm. The as-synthesized spherical In0 nanoparticles were then coated with thin silica shells of thickness ˜ 5nm by a modified Stober method protecting the nanoparticles from agglomeration, direct contact with the probed molecules as well as prevent oxidation of the nanoparticles. Morphological evolution of In0 nanoparticles and SiO2 coating were characterized by transmission electron microscope (TEM). An enhanced near resonant shell-isolated SERS activity from thin film of tryptophan (Tryp) molecules deposited on indium coated substrates under 325nm UV excitation was observed. Finite difference time domain (FDTD) method is employed to comprehend the experimental results and simulate the electric field contours which showed amplified electromagnetic field localized around the nanostructures. The comprehensive analysis indicates that indium is a promising alternate

  4. Modelling and Display of the Ultraviolet Sky

    Science.gov (United States)

    Daniels, J.; Henry, R.; Murthy, J.; Allen, M.; McGlynn, T. A.; Scollick, K.

    1994-12-01

    A computer program is currently under development to model in 3D - one dimension of which is wavelength - all the known and major speculated sources of ultraviolet (900 A - 3100 A ) radiation over the celestial sphere. The software is being written in Fortran 77 and IDL and currently operates under IRIX (the operating system of the Silicon Graphics Iris Machine); all output models are in FITS format. Models along with display software will become available to the astronomical community. The Ultraviolet Sky Model currently includes the Zodiacal Light, Point Sources of Emission, and the Diffuse Galactic Light. The Ultraviolet Sky Model is currently displayed using SkyView: a package under development at NASA/ GSFC, which allows users to retrieve and display publically available all-sky astronomical survey data (covering many wavebands) over the Internet. We present a demonstration of the SkyView display of the Ultraviolet Model. The modelling is a five year development project: the work illustrated here represents product output at the end of year one. Future work includes enhancements to the current models and incorporation of the following models: Galactic Molecular Hydrogen Fluorescence; Galactic Highly Ionized Atomic Line Emission; Integrated Extragalactic Light; and speculated sources in the intergalactic medium such as Ionized Plasma and radiation from Non-Baryonic Particle Decay. We also present a poster which summarizes the components of the Ultraviolet Sky Model and outlines a further package that will be used to display the Ultraviolet Model. This work is supported by United States Air Force Contract F19628-93-K-0004. Dr J. Daniels is supported with a post-doctoral Fellowship from the Leverhulme Foundation, London, United Kingdom. We are also grateful for the encouragement of Dr Stephen Price (Phillips Laboratory, Hanscomb Air Force Base, MA)

  5. Molecular geometry in the ultraviolet absorption spectra

    International Nuclear Information System (INIS)

    Albuquerque, S.F. de; Monteiro, L.S.; Adamis, L.M.B.; Baltar, M.C.P.; Silva, R.M. da

    1977-01-01

    The ultraviolet absorption spectra may be sensibly affected by steric effects. These effects can cause a lot of difficulties and unexpected changes in spectrum. The most general source of such difficulties is steric inhibition of resonance. In addition to this, ultraviolet epectra may be markedly changed by steric factors which change the positions of dipoles in the molecule with respect to each other and by the interaction of nonconjugated chromophores suitably located in space. We have studied in detail each of these effects presenting a lot of usual and importants examples in Organic Chemistry. Others relevants subjects were not considerated in this present work [pt

  6. Disinfection of drinking water by ultraviolet light

    International Nuclear Information System (INIS)

    Anon.

    1977-01-01

    It is no longer mandatory that a given residue of chlorine is present in drinking water and this has led to interest in the use of ultraviolet radiation for disinfection of water in large public waterworks. After a brief discussion of the effect of ultraviolet radiation related to wavelength, the most usual type of irradiation equipment is briefly described. Practioal considerations regarding the installation, such as attenuation of the radiation due to water quality and deposits are presented. The requirements as to dose and residence time are also discussed and finally it is pointed out that hydraulic imperfections can reduce the effectiveness drastically. (JIW)Ψ

  7. Nanoscale freestanding gratings for ultraviolet blocking filters

    Energy Technology Data Exchange (ETDEWEB)

    van Beek, J.T.; Fleming, R.C.; Hindle, P.S.; Prentiss, J.D.; Schattenburg, M.L. [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Ritzau, S. [Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    1998-11-01

    Ultraviolet (UV) blocking filters are needed for atomic flux imaging in environments where high levels of ultraviolet radiation are present. Freestanding gratings are a promising candidate for UV filtering. They have a high aspect ratio ({approximately}13), narrow ({approximately}40 nm) slots, and effectively block UV radiation. The grating fabrication process makes use of several etching, electroplating, and lithographic steps and includes an optional step to plug pinholes induced by particles during processing. Gratings were successfully manufactured and tested. Measured UV transmissions of {approximately}10{sup {minus}5} and particle transmissions of {approximately}10{percent} are in agreement with theoretical predictions. {copyright} {ital 1998 American Vacuum Society.}

  8. Quartz glass behavior at ultraviolet spectrum region

    International Nuclear Information System (INIS)

    Braga, A.F.B.; Barbosa, L.C.; Evora, C.A.P.D.

    1990-01-01

    Melted quartz ingots were produced from raw materials of different sources. Behavior studies of these three different quartz glass were made at the eletromagnetic spectrum ultraviolet region. The atomic absorption spectroscopy was used as an analysis technique of the alkaline, transition and aluminum metal traces. It was found that the alkaline, transition and aluminum metals impurities present a great influence on the melted quartz spectral behavior at the ultraviolet region. It was stated that measurments at this spectrum region constitute an important characterization technique to natural quartz as well as melted quartz. (author) [pt

  9. Plasmonic enhancement of ultraviolet fluorescence

    Science.gov (United States)

    Jiao, Xiaojin

    Plasmonics relates to the interaction between electromagnetic radiation and conduction electrons at metallic interfaces or in metallic nanostructures. Surface plasmons are collective electron oscillations at a metal surface, which can be manipulated by shape, texture and material composition. Plasmonic applications cover a broad spectrum from visible to near infrared, including biosensing, nanolithography, spectroscopy, optoelectronics, photovoltaics and so on. However, there remains a gap in this activity in the ultraviolet (UV, research. Motivating factors in the study of UV Plasmonics are the direct access to biomolecular resonances and native fluorescence, resonant Raman scattering interactions, and the potential for exerting control over photochemical reactions. This dissertation aims to fill in the gap of Plasmonics in the UV with efforts of design, fabrication and characterization of aluminium (Al) and magnesium (Mg) nanostructures for the application of label-free bimolecular detection via native UV fluorescence. The first contribution of this dissertation addresses the design of Al nanostructures in the context of UV fluorescence enhancement. A design method that combines analytical analysis with numerical simulation has been developed. Performance of three canonical plasmonic structures---the dipole antenna, bullseye nanoaperture and nanoaperture array---has been compared. The optimal geometrical parameters have been determined. A novel design of a compound bullseye structure has been proposed and numerically analyzed for the purpose of compensating for the large Stokes shift typical of UV fluorescence. Second, UV lifetime modification of diffusing molecules by Al nanoapertures has been experimentally demonstrated for the first time. Lifetime reductions of ~3.5x have been observed for the high quantum yield (QY) laser dye p-terphenyl in a 60 nm diameter aperture with 50 nm undercut. Furthermore, quantum-yield-dependence of lifetime reduction has been

  10. ESA innovation rescues Ultraviolet Observatory

    Science.gov (United States)

    1995-10-01

    Astrophysicist Freeman J. Dyson from the Institute for Advanced Studies in Princeton characterizes IUE as "A little half-meter mirror sitting in the sky, unnoticed by the public, pouring out results". By use of the IUE satellite, astronomers obtain access to the ultraviolet radiation of celestial bodies in unique ways not available by any other means, neither from the ground nor by any other spacecraft currently in orbit. IUE serves a wide community of astronomers all over Europe, the United States and many other parts of the world. It allows the acquisition of critical data for fundamental studies of comets and their evaporation when they approach the Sun, of the mechanisms driving the stellar winds which make many stars lose a significant fraction of their mass (before they die slowly as White Dwarfs or in sudden Supernova explosions), as well as in the search to understand the ways in which black holes possibly power the violent nuclei of Active galaxies. One year ago the project was threatened with termination and serious concern was expressed by astronomers about the potential loss of IUE's capabilities, as a result of NASA not continuing to operate the spacecraft. Under the leadership of ESA, the three Agencies involved in the operations of IUE (ESA, NASA and the United Kingdom's Particle Physics and Astronomy Research Council, PPARC), reviewed the operations agreements of the Project. A minor investment allowing the implementation of modern management and engineering techniques as well as a complete revision of the communication infrastructure of the project and continuous improvements in efficiency in the ESA management, also taking advantage of today's technologies, both in computing and communications, have made it possible to continue IUE operations within the financial means available, with ESA taking up most of NASA's share in the operations. According to Dr. Willem Wamsteker, ESA's Dutch IUE Project Scientist, "it was a extremely interesting

  11. Influence of alumina on photoluminescence and thermoluminescence characteristics of Gd{sup 3+} doped barium borophosphate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Kalpana, T. [Department of Physics, Acharya Nagarjuna University, Nagarjuna Nagar 522 510, A.P. (India); Gandhi, Y. [Department of Physics, Kakani Venkata Ratnam College, Nandigama 521 185, A.P. (India); Sanyal, Bhaskar [Food Technology Division, Bhabha Atomic Research Center, Trombay, Mumbai 400 085 (India); Sudarsan, V. [Bhabha Atomic Research Centre, Chemistry Division, Mumbai 400 085 (India); Bragiel, P.; Piasecki, M. [Institute of Physics, Jan Dlugosz University, Ul. Armii Krajowej 13/15, Czestochowa 42-201 (Poland); Kumar, V. Ravi [Department of Physics, Acharya Nagarjuna University, Nagarjuna Nagar 522 510, A.P. (India); Veeraiah, N., E-mail: nvr8@rediffmail.com [Department of Physics, Acharya Nagarjuna University, Nagarjuna Nagar 522 510, A.P. (India)

    2016-11-15

    Gd{sup 3+} doped barium borophosphate glasses mixed with varying concentration of Al{sub 2}O{sub 3} are synthesized. Photoluminescence, thermoluminescence and other spectroscopic studies viz., IR and EPR spectral studies, have been carried out. IR spectral studies of these glasses indicated that there is a gradual increase in the degree of depolymerization of the glass network with increase in the concentration of Al{sub 2}O{sub 3} upto 3.0 mol%. The EPR spectral studies revealed the lowest concentration of Gd{sup 3+} ion clusters in the glass mixed with 3.0 mol% of Al{sub 2}O{sub 3}. The photoluminescence emission spectra exhibited strong ultraviolet blue emission at 311 under excitation at 273 nm due to {sup 6}P{sub 7/2}→{sup 8}S{sub 7/2} transition of Gd{sup 3+} ions. The intensity of this band is found to be enhanced four times when the glass mixed with 3.0 mol% of Al{sub 2}O{sub 3} with respect to that of alumina free glass. The enrichment of this emission is attributed to the declustering of Gd{sup 3+} ions by Al{sup 3+} ions. Thermoluminescence (TL) characteristics of these glasses have also been investigated after irradiating them with different doses of γ-rays (in the range 0–8.0 kGy). The TL emission exhibited a dosimetric peak at about 200 °C. The TL output under this glow peak is observed to increase with increase of γ-ray dose. For any fixed γ-ray dose, the TL output is increased with increasing Al{sub 2}O{sub 3} content up to 3.0 mol% and beyond this concentration quenching of TL is observed. The mechanisms responsible for TL emission and the variation in TL output with the concentration of Al{sub 2}O{sub 3} are quantitatively discussed in terms of electron and hole centers developed due to interaction of γ-rays with the glass network. The dose response of these glass samples exhibited linear behavior in the dose range 0–8.0 kGy.

  12. Microcrystalline silicon films and solar cells investigatet by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Merdzhanova, T.

    2005-07-01

    A systematic investigation on photoluminescence (PL) properties of microcrystalline silicon ({mu}c-Si:H) films with structural composition changing from highly crystalline to predominantly amorphous is presented. The samples were prepared by PECVD and HWCVD with different silane concentration in hydrogen (SC). By using photoluminescence in combination with Raman spectroscopy the relationship between electronic properties and the microstructure of the material is studied. The PL spectra of {mu}c-Si:H reveal a rather broad ({proportional_to}0.13 eV) featureless band at about 1 eV ('{mu}c'-Si-band). In mixed phase material of crystalline and amorphous regions, a band at about 1.3 eV with halfwidth of about 0.3 eV is found in addition to '{mu}c'-Si-band, which is attributed to the amorphous phase ('a'-Si-band). Similarly to amorphous silicon, the '{mu}c'-Si-band is assigned to recombination between electrons and holes in band tail states. An additional PL band centred at about 0.7 eV with halfwidth slightly broader than the '{mu}c'-Si-band is observed only for films prepared at high substrate temperature and it is preliminarily assigned to defect-related transitions as in polycrystalline silicon. With decreasing crystalline volume fraction, the '{mu}c'-Si-band shifts continuously to higher energies for all {mu}c-Si:H films but the linewidth of the PL spectra is almost unaffected. This is valid for all deposition conditions investigated. The results are interpreted, assuming decrease of the density of band tail states with decreasing crystalline volume fraction. A simple model is proposed to simulate PL spectra and V{sub oc} in {mu}c-Si:H solar cells as a function of temperature, based on carrier distributions in quasi-equilibrium conditions. In the model is assumed symmetric density of states distributions for electrons and holes in the conduction and the valence band tail states. The best agreement between

  13. Enantioselective silver nanoclusters: Preparation, characterization and photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Farrag, Mostafa, E-mail: mostafafarrag@aun.edu.eg

    2016-09-01

    Herein, we report a new wet-synthesis method to separate some water-soluble chiral silver nanoclusters with high yield. The cluster material was obtained by the reduction of silver nitrate with NaBH{sub 4} in the presence of three ligands L-penicillamine (L-pen), D-penicillamine (D-pen) and racemic mixture of penicillamine (rac-pen), functioning as capping ligand. For characterizing all silver cluster samples, the particle size was assessed by transmission electron microscopy (TEM) and powder X-ray diffraction (XRD) and their average chemical formula was determined from thermogravimetric analysis (TGA) and elemental analysis (EA). The particles sizes of all three clusters are 2.1 ± 0.2 nm. The optical properties of the samples were studied by four different methods: UV-vis spectroscopy, Fourier transform infrared spectroscopy (FTIR), photoluminescence spectroscopy (PL) and circular dichroism (CD) spectroscopy. The spectra are dominated by the typical and intense plasmon peak at 486 nm accompanied by a small shoulder at 540 nm. Infrared spectroscopy was measured for the free ligand and protected silver nanoclusters, where the disappearance of the S-H vibrational band (2535–2570 cm{sup −1}) in the silver nanoclusters confirmed anchoring of ligand to the cluster surface through the sulfur atom. PL studies yielded the fluorescent properties of the samples. The main focus of this work, however, lies in the chirality of the particles. For all silver clusters CD spectra were recorded. While for clusters capped with one of the two enantiomers (D- or L-form) typical CD spectra were observed, no significant signals were detected for a racemic ligand mixture. Furthermore, silver clusters show quite large asymmetry factors (up to 3 × 10{sup −4}) in comparison to most other ligand protected clusters. These large factors and bands in the visible range of the spectrum suggest a strong chiral induction from the ligand to the metal core. Textural features of the

  14. Ultrafast Time-Resolved Photoluminescence Studies of Gallium-Arsenide

    Science.gov (United States)

    Johnson, Matthew Bruce

    This thesis concerns the study of ultrafast phenomena in GaAs using time-resolved photoluminescence (PL). The thesis consists of five chapters. Chapter one is an introduction, which discusses the study of ultrafast phenomena in semiconductors. Chapter two is a description of the colliding-pulse mode-locked (CPM) ring dye laser, which is at the heart of the experimental apparatus used in this thesis. Chapter three presents a detailed experimental and theoretical investigation of photoluminescence excitation correlation spectroscopy (PECS), the novel technique which is used to time-resolve ultrafast PL phenomena. Chapters 4 and 5 discuss two applications of the PECS technique. In Chapter 4 the variation of PL intensity in In-alloyed GaAs substrate material is studied, while Chapter 5 discusses the variation of carrier lifetimes in ion-damaged GaAs used in photo-conductive circuit elements (PCEs). PECS is a pulse-probe technique that measures the cross correlation of photo-excited carrier populations. The theoretical model employed in this thesis is based upon the rate equation for a simple three-level system consisting of valence and conduction bands and a single trap level. In the limit of radiative band-to-band dominated recombination, no PECS signal should be observed; while in the capture -dominated recombination limit, the PECS signal from the band-to-band PL measures the cross correlation of the excited electron and hole populations and thus, the electron and hole lifetimes. PECS is experimentally investigated using a case study of PL in semi-insulating (SI) GaAs and In -alloyed GaAs. At 77 K, the PECS signal is characteristic of a capture-dominated system, yielding an electron-hole lifetime of about 200 ps. However, at 5 K the behavior is more complicated and shows saturation effects due to the C acceptor level, which is un-ionized at 5 K. As a first application, PECS is used to investigate the large band-to-band PL contrast observed near dislocations in In

  15. Far-ultraviolet spectral changes of titanium dioxide with gold nanoparticles by ultraviolet and visible light

    Science.gov (United States)

    Tanabe, Ichiro; Kurawaki, Yuji

    2018-05-01

    Attenuated total reflectance spectra including the far-ultraviolet (FUV, ≤ 200 nm) region of titanium dioxide (TiO2) with and without gold (Au) nanoparticles were measured. A newly developed external light-irradiation system enabled to observe spectral changes of TiO2 with Au nanoparticles upon light irradiations. Absorption in the FUV region decreased and increased by the irradiation with ultraviolet and visible light, respectively. These spectral changes may reflect photo-induced electron transfer from TiO2 to Au nanoparticles under ultraviolet light and from Au nanoparticles to TiO2 under visible light, respectively.

  16. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kong, W., E-mail: wei.kong@duke.edu; Jiao, W. Y.; Kim, T. H.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Roberts, A. T. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Fournelle, J. [Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States); Losurdo, M. [CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari (Italy); Everitt, H. O. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2015-09-28

    Thin films of the wide bandgap quaternary semiconductor In{sub x}Al{sub y}Ga{sub (1−x−y)}N with low In (x = 0.01–0.05) and high Al composition (y = 0.40–0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280 nm–320 nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.

  17. Red photoluminescence of living systems at the room temperature: measurements and results

    International Nuclear Information System (INIS)

    Kudryashova, I S; Rud, V Yu; Shpunt, V Ch; Rud, Yu V; Glinushkin, A P

    2016-01-01

    Presents results of a study of the red luminescence of living plants at room temperature. The analysis of obtained results allows to conclude that the photoluminescence spectra for green leaves in all cases represent the two closely spaced bands. (paper)

  18. Synthesis, characterization and photoluminescence properties of Dy3+ -doped nano-crystalline SnO2.

    CSIR Research Space (South Africa)

    Pillai, SK

    2010-04-15

    Full Text Available the crystallite size. The experimental result on photoluminescence characteristics originating from Dy3+-doping in nanocrystalline SnO2 reveals the dependence of the luminescent intensity on dopant concentration....

  19. Structural, photoluminescence and XPS properties of Tm3þ ions in ZnO nanostructures

    CSIR Research Space (South Africa)

    Kabongo, GL

    2017-07-01

    Full Text Available of photoluminescence (PL) spectroscopy. Finally, Tm 4d core level was detected in ZnO: 0.5 mol% Tm(sup3+) sample from high resolution X-Ray Photoelectron Spectroscopy (XPS) scan....

  20. Photoluminescence and ESR of glasses of the Ge-S system

    International Nuclear Information System (INIS)

    Cernoskova, E.; Cernosek, Z.; Holubova, J.

    1999-01-01

    In this work the chalcogenide glasses were studied by photoluminescence, electron spin resonance (ESR) as well as optically induce ESR (LESR) methods. Dependence of energy of luminescence and Stokes shift on glass composition was determined

  1. Chitosan/ZnAl_2O_4 films: structural evaluation and photoluminescent

    International Nuclear Information System (INIS)

    Araujo, P.M.A.G.; Costa, A.C.F.M.

    2014-01-01

    The photoluminescent materials have been the focus of intense research and applications in optics, electronics and biological areas. This work reports obtaining chitosan/ZnAl_2O_4 film in proportions of 1: 1, 1: 2, 1: 3, 1:4 to 1:5 by weight, and assess the structural properties of the films and photoluminescence. The samples were characterized by XRD, FTIR, emission and excitation. By XRD was found that all samples showed characteristic peaks of chitosan and ZnAl_2O_4. The FTIR spectra for all concentrations of Qs/NPs films exhibit characteristic bands of Qs and trend banding of ions ZnAl_2O_4. The emission and excitation spectra revealed the presence of a broadband processes associated with charge transfer to the Al"3"+ O"2"-, all samples showed good photoluminescent properties being that higher intensities of photoluminescence gave to the film concentration 1:4 being promising for photoelectronic applications. (author)

  2. Thermal Quenching of Photoluminescence from Er-Doped GaN Thin Films

    National Research Council Canada - National Science Library

    Seo, J. T; Hoemmerich, U; Lee, D. C; Heikenfeld, J; Steckl, A. J; Zavada, J. M

    2002-01-01

    The green (537 and 558 nm) and near infrared (1.54 micrometers) photoluminescence (PL) spectra of Er-doped GaN thin films have been investigated as a function of temperature, excitation wavelength, and pump intensity...

  3. Structural and photoluminescence properties of Si-based nanosheet bundles rooted on Si substrates

    Science.gov (United States)

    Yuan, Peiling; Tamaki, Ryo; Kusazaki, Shinya; Atsumi, Nanae; Saito, Yuya; Kumazawa, Yuki; Ahsan, Nazmul; Okada, Yoshitaka; Ishida, Akihiro; Tatsuoka, Hirokazu

    2018-04-01

    Si-based nanosheet bundles were synthesized by the extraction of Ca atoms from CaSi2 microwalls grown on Si substrates by inositol hexakisphosphate solution or thermal treatment in FeCl2 vapor. The structural and photoluminescence properties of the Si-based nanosheet bundles were examined. The photoluminescence emissions in the visible region were clearly observed, and the temperature and excitation intensity dependences of the emissions were characterized. The observed Si-based nanosheets consist of thin Si layers, and a superlattice-like layered structural model is proposed to describe the Si-based nanosheet bundle structures and their photoluminescence property. The photoluminescence property of the nanosheets significantly depends on their treatment process. The luminescence mechanism of the nanosheets was discussed.

  4. Influence of the thermal annealing on the photoluminescence of a-Si:H:F thin films

    International Nuclear Information System (INIS)

    Mendoza A, J.G.; Torres D, G.

    1984-01-01

    The experimental results of the photoluminescence spectra of intrinsic layers of a: Si: H: F deposited by the electric discharge method are presented. This procedure was developed in the presence of silane. (M.W.O.) [pt

  5. Purchase of a Raman and Photoluminescence Imaging System for Characterization of Advanced Electrochemical and Electronic Materials

    Science.gov (United States)

    2016-01-05

    SECURITY CLASSIFICATION OF: Funds were used to purchase a Renishaw inVia Reflex Spectrometer System for Raman and Photoluminescence spectral...Unlimited UU UU UU UU 05-01-2016 15-Aug-2014 14-Aug-2015 Final Report: Purchase of a Raman and Photoluminescence Imaging System for Characterization of...MONITORING AGENCY NAME(S) AND ADDRESS (ES) U.S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 Raman spectroscopy

  6. Photoluminescent Gold Nanoclusters in Cancer Cells: Cellular Uptake, Toxicity, and Generation of Reactive Oxygen Species

    OpenAIRE

    Marija Matulionyte; Dominyka Dapkute; Laima Budenaite; Greta Jarockyte; Ricardas Rotomskis

    2017-01-01

    In recent years, photoluminescent gold nanoclusters have attracted considerable interest in both fundamental biomedical research and practical applications. Due to their ultrasmall size, unique molecule-like optical properties, and facile synthesis gold nanoclusters have been considered very promising photoluminescent agents for biosensing, bioimaging, and targeted therapy. Yet, interaction of such ultra-small nanoclusters with cells and other biological objects remains poorly understood. The...

  7. Photoluminescence properties of LiF bismuth silicate glass

    Science.gov (United States)

    Krishnan, M. Laya; Kumar, V. V. Ravi Kanth

    2018-04-01

    The sample (60-X) Bi2O3-30SiO2-XLiF where X=10, 15, 25 were prepared by conventional melt quenching method. X-ray diffraction pattern conformed the amorphous nature of the prepared sample and a broad peak at 2θ=30°. The Raman spectra confirmed that the Bi can exist both network former (BiO3 pyramidal) and network modifier (BiO6 octahedral)in the glass matrix. The samples showing broad absorption at 470nm is due to the presence of Bi2+ ions, because of increasing optical basicity the absorption edge of the sample is blue shifted. The photoluminescence spectra of the glass under 350nm excitation are showing two main peaks at 430nm and 630 nm due to Bi3+ and Bi2+ respectively and 25 LBS glass showing yellow, 15LBS showing near bluish white and 10LBS showing blue luminescence. The color purity and correlated color temperature are also calculated.

  8. Photoluminescence studies on Eu doped TiO2 nanoparticles

    International Nuclear Information System (INIS)

    Ningthoujam, R.S.; Sudarsan, V.; Vatsa, R.K.; Kadam, R.M.; Jagannath; Gupta, A.

    2009-01-01

    Eu 3+ doped TiO 2 nanoparticles were prepared by urea hydrolysis in ethylene glycol medium at low temperature of 150 deg. C. X-ray diffraction study showed that anatase phase of tetragonal structure was formed below 500 deg. C; and above this temperature, additional peaks due to rutile phase were also observed. From luminescence study, it was found that as prepared nanoparticles showed the enhanced luminescence intensity due to energy transfer from host to europium ions. However, photoluminescence from these nanoparticles was found to disappear when the samples were heated above 900 deg. C. We established the origin of the reduction in the luminescence intensity from Eu 3+ when doped in TiO 2 and heated at 900 deg. C. Based on detailed studies at different heat-treatment temperatures using techniques such as X-ray diffraction, X-ray photoelectron spectroscopy, electron paramagnetic resonance, Raman spectroscopy, and Moessbauer spectroscopy, it has been established that formation of Eu 2 Ti 2 O 7 phase, wherein Eu 3+ ions occupy high symmetric environment (D 3d ) and also reduced distance between Eu 3+ and Eu 3+ ions is responsible for the decrease/loss in the luminescence intensity.

  9. Coherent photoluminescence excitation spectroscopy of semicrystalline polymeric semiconductors

    Science.gov (United States)

    Silva, Carlos; Grégoire, Pascal; Thouin, Félix

    In polymeric semiconductors, the competition between through-bond (intrachain) and through-space (interchain) electronic coupling determines two-dimensional spatial coherence of excitons. The balance of intra- and interchain excitonic coupling depends very sensitively on solid-state microstructure of the polymer film (polycrystalline, semicrystalline with amorphous domains, etc.). Regioregular poly(3-hexylthiophene) has emerged as a model material because its photoluminescence (PL) spectral lineshape reveals intricate information on the magnitude of excitonic coupling, the extent of energetic disorder, and on the extent to which the disordered energy landscape is correlated. I discuss implementation of coherent two-dimensional electronic spectroscopy. We identify cross peaks between 0-0 and 0-1 excitation peaks, and we measure their time evolution, which we interpret within the context of a hybrid HJ aggregate model. By measurement of the homogeneous linewidth in diverse polymer microstructures, we address the nature of optical transitions within such hynbrid aggregate model. These depend strongly on sample processing, and I discuss the relationship between microstructure, steady-state absorption and PL spectral lineshape, and 2D coherent PL excitation spectral lineshapes.

  10. Photoluminescence of sol–gel synthesized PZT powders

    Energy Technology Data Exchange (ETDEWEB)

    Rodríguez-Aranda, M.C. [Coordinación para la Innovación y Aplicación de la Ciencia y la Tecnología-Universidad Autónoma de San Luis Potosí, Av. Sierra Leona No.550,Col. Lomas 2a. sección, C.P. 78210 San Luis Potosí, SLP, México (Mexico); Calderón-Piñar, F. [Centro de Investigación y de Estudios Avanzados del I.P.N. Unidad Querétaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, C.P. 7623 Querétaro, Qro, México (Mexico); Facultad de Física/IMRE, San Lázaro y L, Universidad de la Habana, C.P. 10400 Habana (Cuba); Hernández-Landaverde, M.A. [Centro de Investigación y de Estudios Avanzados del I.P.N. Unidad Querétaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, C.P. 7623 Querétaro, Qro, México (Mexico); and others

    2016-11-15

    A wide band of photoluminescence (PL) emission in structurally disordered lead zirconate titanate (PZT) powders, prepared by sol–gel route, was observed at room temperature excited with a laser line (488 nm). Powders with PbZr{sub 0.53}Ti{sub 0.47}O{sub 3} nominal composition annealed at different temperatures were studied by X-ray diffraction, Raman spectroscopy, Luminescence, Diffuse Reflectance and Electronic Paramagnetic Resonance Spectroscopy (EPR). Our results indicate that the PL response can be associated to order–disorder degree in the perovskite structure, with the exception of samples annealed at low temperature, where a mixture of oxides precursorsГ—Ві phases was observed. Furthermore, in quasi-crystalline ordered samples (95% of crystallinity) a small generation of PL remains. In these experiments, the band gap increases with the formation of crystalline structure. EPR experiments were conducted in order to follow the evolution of paramagnetic species with thermal treatment from the mixture of oxides precursors to the perovskite phase and paramagnetic point defects were identified (Pb{sup +3} and Ti{sup +3}). EPR data suggest the presence of order–disorder within the lattice network. Paramagnetic species are similar in samples treated at 700 and 800 °C, nevertheless the emission intensity decreases by a factor of 6, indicating that the defects associated with PL are not paramagnetic at both temperatures.

  11. Photoluminescence from CdxHg1-xTe

    International Nuclear Information System (INIS)

    Breivik, M; Selvig, E; Tonheim, C R; Brendhagen, E; Brudevoll, T; Rheenen, A D van; Steen, H; Nicolas, S; Lorentzen, T; Haakenaasen, R

    2008-01-01

    We present important aspects of photoluminescence (PL) of Cd x Hg 1-x Te in the infrared part of the spectrum where background thermal radiation significantly affects the PL spectrum. We show how the background spectrum can be removed from the data. We also show how the wavelength of the excitation laser affects the relative intensity of the PL peaks from a multi-layer structure. Finally, we present temperature dependent PL of a Cd 0.36 Hg 0.64 Te/Cd 0.61 Hg 0.39 Te multiple quantum well structure grown on a 4 μm thick Cd 0.36 Hg 0.64 Te buffer layer. We attribute the low temperature peak from the buffer layer to impurities. The impurity levels are depopulated as the temperature increases, resulting in a decreased PL peak intensity. Above ∼200 K a band-to-band peak from the buffer layer is observed. The quantum well peak persists up to ∼200 K

  12. Interdot carrier's transfer via tunneling pathway studied from photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Rihani, J.; Sallet, V.; Yahyaoui, N.; Harmand, J.C.; Oueslati, M.; Chtourou, R.

    2009-01-01

    Self-assembled InAs quantum dots (QDs) on GaAs(0 0 1) substrate were grown by molecular beam epitaxy (MBE) at a growth temperature of 490 deg. C. Two different families of dots were observed in the atomic force microscopy (AFM) image and ambiguously identified in the photoluminescence (PL) spectra. Temperature-dependent PL study was carried out in the 8-270 K temperature range. The integrated-PL intensity behavior of the two QDs populations was fit with the help of a rate equations model. It is found that the evolutions of the integrated-PL intensity of the two QDs population were governed by two regimes. The first one occurs in the 8-210 K temperature range and reveals an unusual enhancement of the integrated-PL intensity of the larger QDs (LQDs) class. This was attributed to the carrier supplies from the smaller QDs (SQDs) class via the tunneling process. The second one occurs in the 210-270 K temperature range and shows a common quench of the PL signals of the two QDs families, reflecting the same thermal escape mechanism of carriers

  13. Photoluminescent properties of nanoporous anodic alumina doped with manganese ions

    Energy Technology Data Exchange (ETDEWEB)

    Gasenkova, I.V. [State Research and Production Association ' Optic, Optoelectronic and Laser techniques”, 68 Nezavisimosti Ave., Minsk 220072 (Belarus); Mukhurov, N.I., E-mail: n.mukhurov@ifanbel.bas-net.by [State Research and Production Association ' Optic, Optoelectronic and Laser techniques”, 68 Nezavisimosti Ave., Minsk 220072 (Belarus); Zhvavyi, S.P.; Kolesnik, E.E. [State Research and Production Association ' Optic, Optoelectronic and Laser techniques”, 68 Nezavisimosti Ave., Minsk 220072 (Belarus); Stupak, A.P. [B.I.Stepanov Institute of Physics of the National Academy of Sciences of Belarus, 68 Nezavisimosti Ave., Minsk 220072 (Belarus)

    2017-05-15

    The results are presented of a comparative study of photoluminescent (PL) properties of unalloyed and Mn-alloyed porous anodic alumina (PAA) subjected to annealing at temperatures in the range of ГђВў{sub a}=200–1300 °ГђВЎ. The possibility of alloying of PAA with metal atoms is illustrated through an example of Mn atoms, and the effect of this impurity on the optical properties of aluminum oxide is examined. Alloying of PAA with Mn ions leads to the formation of complex defects including manganese ions and oxygen vacancies. The difference observed in the spectral dependences of the PL intensity of alloyed and unalloyed specimens is explained by the change in the valence of manganese ions in the complex defects. A decrease has been discovered in the PL intensity of the PL bands and R-lines of Mn and Cr ions in the α-phase under prolonged UV-exposure of the alloyed samples.

  14. Rethinking the theoretical description of photoluminescence in compound semiconductors

    Science.gov (United States)

    Valkovskii, V.; Jandieri, K.; Gebhard, F.; Baranovskii, S. D.

    2018-02-01

    Semiconductor compounds, such as Ga(NAsP)/GaP or GaAsBi/GaAs, are in the focus of intensive research due to their unique features for optoelectronic devices. The optical spectra of compound semiconductors are strongly influenced by the random scattering potentials caused by compositional and structural disorder. The disorder potential is responsible for the red-shift (Stokes shift) of the photoluminescence (PL) peak and for the inhomogeneous broadening of the PL spectra. So far, the anomalous broadening of the PL spectra in Ga(NAsP)/GaP has been explained assuming two coexisting length scales of disorder. However, this interpretation appears in contradiction to the recently observed dependence of the PL linewidth on the excitation intensity. We suggest an alternative approach that describes the PL characteristics in the framework of a model with a single length scale of disorder. The price is the assumption of two types of localized states with different, temperature-dependent non-radiative recombination rates.

  15. Photoluminescence of phosphorus atomic layer doped Ge grown on Si

    Science.gov (United States)

    Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

    2017-10-01

    Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

  16. Structure, microstructure and photoluminescence of nanocrystalline Ti-doped gahnite

    International Nuclear Information System (INIS)

    Vrankić, M.; Gržeta, B.; Mandić, V.; Tkalčec, E.; Milošević, S.; Čeh, M.; Rakvin, B.

    2012-01-01

    Highlights: ► Ti-doped gahnite samples with 0–11.6 at.% Ti were synthesized for the first time. ► The samples had crystallite size of 16.6–20.5 nm and lattice strain of 0.07–0.26%. ► Titanium entered the gahnite structure as Ti 4+ , substituting for octahedral Al 3+ . ► Ti-doped gahnite showed the UV absorption and blue emission under UV excitation. - Abstract: A series of Ti-doped ZnAl 2 O 4 (gahnite) samples with doping levels of 0, 1.8, 3.8, 5.4 and 11.6 at.% Ti in relation to Al were prepared by a sol–gel technique. The samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), EPR spectroscopy, UV–vis reflectance spectroscopy and photoluminescence (PL) studies. Diffraction patterns indicated that all samples were nanocrystalline, with a spinel-type structure, space group Fd3 ¯ m. Titanium doping of gahnite caused an increase of unit-cell parameter and diffraction line broadening. The structure of samples was refined by the Rietveld method, simultaneously with the analysis of diffraction line broadening. TEM investigations confirmed that samples had spinel-type structure, and showed that samples contained evenly shaped particles of about 20 nm in size. Ti-doped samples exhibited strong absorption at wavelength exc = 308 nm.

  17. Green–white electroluminescence and green photoluminescence of zinc complexes

    Energy Technology Data Exchange (ETDEWEB)

    Janghouri, Mohammad; Mohajerani, Ezeddin [Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Tehran 1983963113 (Iran, Islamic Republic of); Amini, Mostafa M.; Najafi, Ezzatollah [Department of Chemistry, Shahid Beheshti University, G.C., Tehran 1983963113 (Iran, Islamic Republic of)

    2014-10-15

    A series of zinc complexes has been synthesized and utilized as fluorescent materials in organic light-emitting diodes (OLEDs). All prepared complexes were characterized by elemental analysis (CHN), UV–vis, FT-IR and {sup 1}H NMR spectroscopy. The energy levels of zinc complexes were determined by cyclic voltammetry measurements. Devices with fundamental structure of ITO/PVK:PBD (50 nm)/zinc complexes/BCP (5 nm)/Alq{sub 3} (25 nm)/Al (180 nm) were fabricated. A green electroluminescence was obtained from thin film complexes at 25 nm thickness. When thickness of the complex bis(2-methylquinolin-8-olato)-bis[(acetato)-(methanol)zinc(II)] (B) in thin film decreased from 25 nm to 20, 18, and 12 nm, a white electroluminescence obtained. The white emission which was composed of blue and green attributed to the PVK:PBD blend and thickness of complex, respectively. With 12 nm thickness of complex, a maximum luminance of 4530 cd/m{sup 2} at a current density 398.32 mA/cm{sup 2} with CIE coordinates of 0.22 and 0.36 at 20 V was achieved. - Highlights: • Several new zinc complexes have been synthesized and utilized as fluorescent materials in OLEDs. • Photoluminescence emission of zinc complexes showed a red shift in respect to PVK:PBD blend. • Green electroluminescence emission from zinc complexes was achieved. • White emission has been obtained for an OLED by changing thickness of the zinc complex.

  18. Surface effects on the photoluminescence of Si quantum dots

    International Nuclear Information System (INIS)

    Wang, Chiang-Jing; Tsai, Meng-Yen; Chi, Cheng Chung; Perng, Tsong-Pyng

    2009-01-01

    Si quantum dots (SiQDs) with sizes ranging from 5 to 20 nm were fabricated by vapor condensation. They showed red photoluminescence (PL) in vacuum with the peak located at around 750 nm. After the specimen was exposed to air, the PL intensity became higher, and continued to increase during the PL test with a cycling of vacuum-air-vacuum. In pure oxygen, the PL intensity exhibited an irreversible decrease, while in nitrogen a smaller amount of reversible increase of PL intensity was observed. Furthermore, the PL intensity exhibited a remarkable enhancement if the SiQDs were treated with water. With HF treatment, the PL peak position showed a blue-shift to 680 nm, and was recovered after subsequent exposure to air. Si-O-H complexes were suggested to be responsible for this red luminescence. The irreversible decrease of PL intensity due to oxygen adsorption was speculated to be caused by the modification of chemical bonds on the surface. In the case of nitrogen adsorption, the PL change was attributed to the surface charging during adsorption.

  19. Electric Field-Dependent Photoluminescence in Multilayer Transition Metal Dichalcogenides

    Science.gov (United States)

    Stanev, T. K.; Henning, A.; Sangwan, V. K.; Speiser, N.; Stern, N. P.; Lauhon, L. J.; Hersam, M. C.; Wang, K.; Valencia, D.; Charles, J.; Kubis, T. C.

    Owing to interlayer coupling, transition metal dichalcogenides (TMDCs) such as MoS2 exhibit strong layer dependence of optical and electronic phenomena such as the band gap and trion and neutral exciton population dynamics. Here, we systematically measure the effect of layer number on the optical response of multilayer MoS2 in an external electric field, observing field and layer number dependent emission energy and photoluminescence intensity. These effects are studied in few (2-6) and bulk (11 +) layered structures at low temperatures. In MoS2\\ the observed layer dependence arises from several mechanisms, including interlayer charge transfer, band structure, Stark Effect, Fermi level changes, screening, and surface effects, so it can be challenging to isolate how these mechanisms impact the observables. Because it behaves like a stack of weakly interacting monolayers rather than multilayer or bulk, ReS2 provides a comparison to traditional TMDCs to help isolate the underlying physical mechanisms dictating the response of multilayers. This work is supported by the National Science Foundation MRSEC program (DMR-1121262), and the 2-DARE Grant (EFRI-1433510). N.P.S. is an Alfred P. Sloan Research Fellow.

  20. Photoluminescence properties of TiO{sub 2} nanofibers

    Energy Technology Data Exchange (ETDEWEB)

    Chetibi, Loubna [University Mentouri Constantine and National Polytechnic School of Constantine, Materials Science and Applications Unit (Algeria); Busko, Tetiana; Kulish, Nikolay Polikarpovich [Kyiv National Taras Shevchenko University (Ukraine); Hamana, Djamel [University Mentouri Constantine and National Polytechnic School of Constantine, Materials Science and Applications Unit (Algeria); Chaieb, Sahraoui [Lawrence Berkeley National Laboratory (United States); Achour, Slimane, E-mail: achourslimane11@yahoo.fr [University Mentouri Constantine and National Polytechnic School of Constantine, Materials Science and Applications Unit (Algeria)

    2017-04-15

    Multi-walled carbon nanotube (MWCNT)-TiO{sub 2} nanofiber (NF) composites forming a layered nanostructure (MWCNTs/TiO{sub 2} NFs/Ti) were prepared by impregnation at low temperature. Room temperature photoluminescence (PL) of these nanostructures shows a broad intense band in the visible light range (∼450–600 nm). The origin of the PL emission which, mainly, resulted from surface oxygen vacancies and other defects was investigated. We studied the effect of MWCNT deposition on the PL of TiO{sub 2} NFs where the MWCNTs can act as an electron reservoir of electrons emitted from TiO{sub 2} nanofibers when irradiated with UV light. The combination of MWCNTs and TiO{sub 2} results in quenching of TiO{sub 2} luminescence in the visible range. In addition, the prepared surface of MWCNTs-TiO{sub 2} was irradiated with Ti{sup +} ions using irradiation energy of 140 keV and doses of 10{sup 13} ions/cm{sup 2}. Also, this treatment induced the PL intensity quenching due to the generation of non-radiative additional levels inside the band gap.

  1. Time-resolved photoluminescence of SiOx encapsulated Si

    Science.gov (United States)

    Kalem, Seref; Hannas, Amal; Österman, Tomas; Sundström, Villy

    Silicon and its oxide SiOx offer a number of exciting electrical and optical properties originating from defects and size reduction enabling engineering new electronic devices including resistive switching memories. Here we present the results of photoluminescence dynamics relevant to defects and quantum confinement effects. Time-resolved luminescence at room temperature exhibits an ultrafast decay component of less than 10 ps at around 480 nm and a slower component of around 60 ps as measured by streak camera. Red shift at the initial stages of the blue luminescence decay confirms the presence of a charge transfer to long lived states. Time-correlated single photon counting measurements revealed a life-time of about 5 ns for these states. The same quantum structures emit in near infrared close to optical communication wavelengths. Nature of the emission is described and modeling is provided for the luminescence dynamics. The electrical characteristics of metal-oxide-semiconductor devices were correlated with the optical and vibrational measurement results in order to have better insight into the switching mechanisms in such resistive devices as possible next generation RAM memory elements. ``This work was supported by ENIAC Joint Undertaking and Laser-Lab Europe''.

  2. Temperature-dependent photoluminescence from CdS/Si nanoheterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Song, Yue Li; Li, Yong; Ji, Peng Fei; Zhou, Feng Qun; Sun, Xiao Jun; Yuan, Shu Qing; Wan, Ming Li [Pingdingshan University, Department of Physics, Solar New Energy Research Center, Pingdingshan (China); Ling, Hong [North China University of Water Resources and Electric Power, Department of Mathematics and Information Science, Zhengzhou (China)

    2016-12-15

    CdS/Si nanoheterojunctions have been fabricated by growing nanocrystal CdS (nc-CdS) on the silicon nanoporous pillar array (Si-NPA) through using a chemical bath deposition method. The nanoheterojunctions have been constructed by three layers: the upper layer being a nc-CdS thin films, the intermediate layer being the interface region including nc-CdS and nanocrystal silicon (nc-Si), and the bottom layer being nc-Si layer grown on sc-Si substrate. The room temperature and temperature-dependent photoluminescence (PL) have been measured and analyzed to provide some useful information of defect states. Utilizing the Gauss-Newton fitting method, five emission peaks from the temperature-dependent PL spectra can be determined. From the high energy to low energy, these five peaks are ascribed to the some luminescence centers which are formed by the oxygen-related deficiency centers in the silicon oxide layer of Si-NPA, the band gap emission of nc-CdS, the transition from the interstitial cadmium (I{sub Cd}) to the valence band, the recombination from I{sub Cd} to cadmium vacancies (V{sub Cd}), and from sulfur vacancies (V{sub s}) to the valence band, respectively. Understanding of the defect states in the CdS/Si nanoheterojunctions is very meaningful for the performance of devices based on CdS/Si nanoheterojunctions. (orig.)

  3. Band-edge photoluminescence in CdTe

    International Nuclear Information System (INIS)

    Horodysky, P.; Grill, R.; Hlidek, P.

    2006-01-01

    Near band-gap photoluminescence (PL) and absorption of bulk crystals of CdTe were measured over a wide range of temperatures (4-500 K). It is demonstrated that the high-temperature (above 150 K) PL intensity correlates with a lower quality of the samples and quasiparticle localization induced by the crystal potential fluctuations. The influence of the high absorption coefficient at the free-exciton resonance energy on the PL spectra is analytically studied by solving the diffusion-recombination equation. We show that the reabsorption of the radiation by the free-exciton states creates two illusory PL maxima. No dead surface layer is needed to explain reabsorption effects. The room-temperature PL maximum matches neither the free-exciton resonance nor the band-gap energy. The high temperature PL is explained by the recombination of electrons and holes localized on potential fluctuations. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Strong Photoluminescence Enhancement of Silicon Oxycarbide through Defect Engineering

    Directory of Open Access Journals (Sweden)

    Brian Ford

    2017-04-01

    Full Text Available The following study focuses on the photoluminescence (PL enhancement of chemically synthesized silicon oxycarbide (SiCxOy thin films and nanowires through defect engineering via post-deposition passivation treatments. SiCxOy materials were deposited via thermal chemical vapor deposition (TCVD, and exhibit strong white light emission at room-temperature. Post-deposition passivation treatments were carried out using oxygen, nitrogen, and forming gas (FG, 5% H2, 95% N2 ambients, modifying the observed white light emission. The observed white luminescence was found to be inversely related to the carbonyl (C=O bond density present in the films. The peak-to-peak PL was enhanced ~18 and ~17 times for, respectively, the two SiCxOy matrices, oxygen-rich and carbon-rich SiCxOy, via post-deposition passivations. Through a combinational and systematic Fourier transform infrared spectroscopy (FTIR and PL study, it was revealed that proper tailoring of the passivations reduces the carbonyl bond density by a factor of ~2.2, corresponding to a PL enhancement of ~50 times. Furthermore, the temperature-dependent and temperature-dependent time resolved PL (TDPL and TD-TRPL behaviors of the nitrogen and forming gas passivated SiCxOy thin films were investigated to acquire further insight into the ramifications of the passivation on the carbonyl/dangling bond density and PL yield.

  5. Optical modelling of photoluminescence emitted by thin doped films

    International Nuclear Information System (INIS)

    Pigeat, P.; Easwarakhanthan, T.; Briancon, J.L.; Rinnert, H.

    2011-01-01

    Photoluminescence (PL) spectra emitted by doped films are deformed owing to film thickness-dependent wave interference. This hampers knowing well their PL generating mechanisms as well as designing photonic devices with suitable geometries that improve their PL efficiency. We develop in this paper an energy model for PL emitted by doped films considering the interaction between the wavelength-differing incident standing and emitted waves, their energy transfer in-between, and the interferences undergone by both. The film optical constants are estimated fitting the model to the measured PL. This simple model has thus allowed us to interpret the evolution of PL emitted by Er-doped AlN films prepared on Si substrates by reactive magnetron sputtering. The shapes, the amplitudes, and the illusive sub-spectral features of the PL spectra depend essentially on the film thickness. The model further predicts high sensitivity for PL emitted by non-homogenously doped stacked-films to incident light wavelengths and film-thickness variations. This property has potential applications in tracking wavelength variations and in measuring physical quantities producing thickness variations. This model may be used to optimise PL efficiency of photonic devices through different film geometries and optical properties.

  6. Synthesis, characterization and photoluminescence of tin oxide nanoribbons and nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Duraia, El-Shazly M.A., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansorov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan)

    2009-11-15

    In this work we report the successful formation of tin oxide nanowires and tin oxide nanoribbons with high yield and by using simple cheap method. We also report the formation of curved nanoribbon, wedge-like tin oxide nanowires and star-like nanowires. The growth mechanism of these structures has been studied. Scanning electron microscope was used in the analysis and the EDX analysis showed that our samples is purely Sn and O with ratio 1:2. X-ray analysis was also used in the characterization of the tin oxide nanowire and showed the high crystallinity of our nanowires. The mechanism of the growth of our1D nanostructures is closely related to the vapor-liquid-solid (VLS) process. The photoluminescence PL measurements for the tin oxide nanowires indicated that there are three stable emission peaks centered at wavelengths 630, 565 and 395 nm. The nature of the transition may be attributed to nanocrystals inside the nanobelts or to Sn or O vacancies occurring during the growth which can induce trapped states in the band gap.

  7. Plasmon mode excitation and photoluminescence enhancement on silver nanoring

    Science.gov (United States)

    Kuchmizhak, Aleksandr A.; Gurbatov, Stanislav O.; Kulchin, Yuri N.; Vitrik, Oleg B.

    2015-12-01

    We demonstrate a simple and high-performance laser-assisted technique for silver nanoring fabrication, which includes the ablation of the Ag film by focused nanosecond pulses and subsequent reactive ion polishing. The nanoring diameter and thickness can be controlled by optimizing both the pulse energy and the metal film thickness at laser ablation step, while the subsequent reactive ion polishing provides the ability to fabricate the nanoring with desirable height. Scattering patterns of s-polarized collimated laser beam obliquely illuminating the nanoring demonstrate the focal spot inside the nanoring shifted from its center at a distance of ~0.57Rring. Five-fold enhancement of the photoluminescence signal from the Rhodamine 6G organic dye near the Ag nanoring was demonstrated. This enhancement was attributed to the increase of the electromagnetic field amplitude near the nanoring surface arising from excitation of the multipole plasmon modes traveling along the nanoring. This assumption was confirmed by dark-field back-scattering spectrum of the nanoring measured under white-light illumination, as well as by supporting finite-difference time-domain simulations.

  8. Angle-resolved photoluminescence spectrum of a uniform phosphor layer

    Science.gov (United States)

    Fujieda, Ichiro; Ohta, Masamichi

    2017-10-01

    A photoluminescence spectrum depends on an emission angle due to self-absorption in a phosphor material. Assuming isotropic initial emission and Lambert-Beer's law, we have derived simple expressions for the angle-resolved spectra emerging from the top and bottom surfaces of a uniform phosphor layer. The transmittance of an excitation light through the phosphor layer can be regarded as a design parameter. For a strongly-absorbing phosphor layer, the forward flux is less intense and more red-shifted than the backward flux. The red-shift is enhanced as the emission direction deviates away from the plane normal. When we increase the transmittance, the backward flux decreases monotonically. The forward flux peaks at a certain transmittance value. The two fluxes become similar to each other for a weakly-absorbing phosphor layer. We have observed these behaviors in experiment. In a practical application, self-absorption decreases the efficiency of conversion and results in angle-dependent variations in chromaticity coordinates. A patterned phosphor layer with a secondary optical element such as a remote reflector alleviates these problems.

  9. Green–white electroluminescence and green photoluminescence of zinc complexes

    International Nuclear Information System (INIS)

    Janghouri, Mohammad; Mohajerani, Ezeddin; Amini, Mostafa M.; Najafi, Ezzatollah

    2014-01-01

    A series of zinc complexes has been synthesized and utilized as fluorescent materials in organic light-emitting diodes (OLEDs). All prepared complexes were characterized by elemental analysis (CHN), UV–vis, FT-IR and 1 H NMR spectroscopy. The energy levels of zinc complexes were determined by cyclic voltammetry measurements. Devices with fundamental structure of ITO/PVK:PBD (50 nm)/zinc complexes/BCP (5 nm)/Alq 3 (25 nm)/Al (180 nm) were fabricated. A green electroluminescence was obtained from thin film complexes at 25 nm thickness. When thickness of the complex bis(2-methylquinolin-8-olato)-bis[(acetato)-(methanol)zinc(II)] (B) in thin film decreased from 25 nm to 20, 18, and 12 nm, a white electroluminescence obtained. The white emission which was composed of blue and green attributed to the PVK:PBD blend and thickness of complex, respectively. With 12 nm thickness of complex, a maximum luminance of 4530 cd/m 2 at a current density 398.32 mA/cm 2 with CIE coordinates of 0.22 and 0.36 at 20 V was achieved. - Highlights: • Several new zinc complexes have been synthesized and utilized as fluorescent materials in OLEDs. • Photoluminescence emission of zinc complexes showed a red shift in respect to PVK:PBD blend. • Green electroluminescence emission from zinc complexes was achieved. • White emission has been obtained for an OLED by changing thickness of the zinc complex

  10. Europium polyoxometalates encapsulated in silica nanoparticles - characterization and photoluminescence studies

    Energy Technology Data Exchange (ETDEWEB)

    Neves, Cristina S.; Granadeiro, Carlos M.; Cunha-Silva, Luis; Eaton, Peter; Balula, Salete S.; Pereira, Eulalia [REQUIMTE/Departamento de Quimica e Bioquimica, Faculdade de Ciencias, Universidade do Porto (Portugal); Ananias, Duarte [CICECO, Departamento de Quimica, Universidade de Aveiro (Portugal); Gago, Sandra [REQUIMTE, Departamento de Quimica, Faculdade de Ciencias e Tecnologia, Universidade Nova de Lisboa, Monte de Caparica (Portugal); Feio, Gabriel [CENIMAT/I3N, Departamento de Ciencia dos Materiais, Faculdade de Ciencias e Tecnologia, Universidade Nova de Lisboa, Monte de Caparica (Portugal); Carvalho, Patricia A. [ICEMS/Departamento de Bioengenharia, Instituto Superior Tecnico, Lisboa (Portugal)

    2013-06-15

    The incorporation of europium polyoxometalates into silica nanoparticles can lead to a biocompatible nanomaterial with luminescent properties suitable for applications in biosensors, biological probes, and imaging. Keggin-type europium polyoxometalates Eu(PW{sub 11}){sub x} (x = 1 and 2) with different europium coordination environments were prepared by using simple methodologies and no expensive reactants. These luminescent compounds were then encapsulated into silica nanoparticles for the first time through the water-in-oil microemulsion methodology with a nonionic surfactant. The europium polyoxometalates and the nanoparticles were characterized by using several techniques [FTIR, FT-Raman, {sup 31}P magic angle spinning (MAS) NMR, and TEM/energy-dispersive X-ray spectroscopy (TEM-EDS), AFM, dynamic light scattering (DLS), and inductively coupled plasma MS (ICP-MS) analysis]. The stability of the material and the integrity of the europium compounds incorporated were also examined. Furthermore, the photoluminescence properties of the Eu(PW{sub 11}){sub x} rate at SiO{sub 2} nanomaterials were evaluated and compared with those of the free europium polyoxometalates. The silica surface of the most stable nanoparticles was successfully functionalized with appropriate organosilanes to enable the covalent binding of oligonucleotides. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Femtosecond transient photoluminescence of the substituted poly(diphenylacetulene)s.

    Science.gov (United States)

    Piskun, N. V.; Wang, D. K.; Lim, H.; Epstein, A. J.; Vanwoerkom, L. D.; Gustafson, T. L.

    2000-03-01

    We present the results of a femtosecond transient photoluminescence (PL) study of solutions of two derivatives of substituted poly(diphenylacetylene) using an up-conversion technique. n-Butyl (nBu) and p-carbazole (Cz) substituted poly(diphenylacetylene), PDPA-nBu and PDPA-Cz respectively, have band gaps determined by maxima in the slope of absorption vs. energy of 2.75 eV and 2.63 eV. The steady state emission peaks are at 2.4 eV for PDPA-nBu and at 2.3 eV for PDPA-Cz respectively. The PL peak for PDPA-Cz is red shifted in comparison to the PL peak for PDPA-nBu. Roles of phenyl groups, electron donating effect of the carbazole side units and planarity of the backbone are discussed. Exciting at 3.1 eV, the fs PL shows a faster decay for PDPA-Cz than that for PDPA-nBu, in accord with the decrease of PL quantum efficiency of PDPA-Cz. The 200 fs - 80 ps PL(t) agrees with ~1 ns lifetime. The PDPA-Cz has larger red shift in the 0.2-20 ps time frame. The origin of that shift will be discussed. This work is supported in part by ONR.

  12. Deep learning relevance

    DEFF Research Database (Denmark)

    Lioma, Christina; Larsen, Birger; Petersen, Casper

    2016-01-01

    train a Recurrent Neural Network (RNN) on existing relevant information to that query. We then use the RNN to "deep learn" a single, synthetic, and we assume, relevant document for that query. We design a crowdsourcing experiment to assess how relevant the "deep learned" document is, compared...... to existing relevant documents. Users are shown a query and four wordclouds (of three existing relevant documents and our deep learned synthetic document). The synthetic document is ranked on average most relevant of all....

  13. Solar ultraviolet radiation in a changing climate

    Science.gov (United States)

    The projected large increases in damaging ultraviolet radiation as a result of global emissions of ozone-depleting substances have been forestalled by the success of the Montreal Protocol. New challenges are now arising in relation to climate change. We highlight the complex inte...

  14. Habitat impact on ultraviolet reflectance in moths

    Czech Academy of Sciences Publication Activity Database

    Zapletalová, Lenka; Zapletal, Michal; Konvička, Martin

    2016-01-01

    Roč. 45, č. 5 (2016), s. 1300-1305 ISSN 0046-225X R&D Projects: GA ČR(CZ) GA14-33733S Institutional support: RVO:60077344 Keywords : Lepidoptera * ultraviolet reflectance * mimicry Subject RIV: EH - Ecology, Behaviour Impact factor: 1.601, year: 2016

  15. Characterization of ethanol concentrations at ultraviolet wavelength ...

    African Journals Online (AJOL)

    This paper presents the measurement of optical absorption spectrum for different concentrations of ethanol at ultraviolet wavelength. Ethanol absorption spectrum was measured using portable spectroscopy setup from Avantes. It consists of Balanced Deuterium Halogen light source and spectrometer. The light source can ...

  16. Ultraviolet spectra of Mg in liquid helium

    International Nuclear Information System (INIS)

    Moriwaki, Y.; Morita, N.

    1999-01-01

    Emission and absorption spectra of Mg atoms implanted in liquid helium have been observed in the ultraviolet region. We have presented a model of exciplex formation of Mg-He 10 and found that this model is more suitable for understanding the dynamics in the 3s3p 1 P→3s 21 S transition than the bubble model. (orig.)

  17. Combined ultraviolet studies of astronomical sources

    Science.gov (United States)

    Baliunas, S. L.; Dupree, A. K.; Elvis, M.; Huchra, J. P.; Kenyon, S.; Raymond, J. C.

    1986-01-01

    Topics addressed include: Cygnus Loop; P Cygni profiles in dwarf novae; YY Gem; nova shells; HZ Herculis; activity cycles in cluster giants; Alpha Ori; metal deficient giant stars; ultraviolet spectra of symbiotic stars detected by the Very Large Array; time variability in symbiotic stars; blue galaxies; and quasistellar objects with X-ray spectra.

  18. The impact of ultraviolet radiation on timber

    International Nuclear Information System (INIS)

    Dawson, B.

    1993-01-01

    Photochemical degradation of timber, the outcome of exposure of timber to ultraviolet radiation, is a light induced chemical and physical decay. Timber is a collection of dead wood cells. Impacts of radiation on the growing tree are therefore outside the scope of this paper, which is primarily concerned with timber as a material. (author). 5 refs. 2 figs

  19. Inorganic pigments doped with tris(pyrazol-1-yl)borate lanthanide complexes: A photoluminescence study

    Energy Technology Data Exchange (ETDEWEB)

    Gheno, Giulia, E-mail: giulia.gheno@unive.it [Dipartimento di Scienze Molecolari e Nanosistemi, Università Ca’ Foscari di Venezia, Dorsoduro 2137, 30123 Venezia (Italy); Bortoluzzi, Marco; Ganzerla, Renzo [Dipartimento di Scienze Molecolari e Nanosistemi, Università Ca’ Foscari di Venezia, Dorsoduro 2137, 30123 Venezia (Italy); Enrichi, Francesco [CIVEN, Coordinamento Interuniversitario Veneto per le Nanotecnologie, Via delle Industrie 5, 30175 Marghera, Venezia (Italy)

    2014-01-15

    The inorganic pigments malachite, Egyptian blue, Ercolano blue and chrome yellow have been doped with the neutral homoleptic Ln(III) complex Ln(Tp){sub 3} (Ln=Eu, Tb; Tp=hydrotris(pyrazol-1-yl)borate) in the presence of arabic gum or acrylic emulsion as binders, in order to obtain photoluminescent materials of interest for cultural heritage restoration. The doped pigments have shown emissions associated to f–f transitions in the visible range upon excitation with UV light. Thermal and UV-light ageings have been carried out. In all the cases the photoluminescent behaviour is maintained, but in the cases of acrylic-based paints emission spectra and lifetimes are strongly influenced by thermal treatments. The choice of binder and pigments influences the photoluminescent behaviour of the corresponding film paints. -- Highlights: • Inorganic pigments doped with photoluminescent lanthanide complexes. • Hydrotris(pyrazol-1-yl)borate (Tp) as antenna-ligand for Eu(III) and Tb(III). • Emission associated to f–f transitions upon excitation with UV light. • Photoluminescence of paints influenced by the choice of binder and pigments. • Photoluminescence after ageing depending upon the type of binder.

  20. 21 CFR 878.4635 - Ultraviolet lamp for tanning.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Ultraviolet lamp for tanning. 878.4635 Section 878... tanning. (a) Identification. An ultraviolet lamp for tanning is a device that is a lamp (including a fixture) intended to provide ultraviolet radiation to tan the skin. See § 1040.20 of this chapter. (b...

  1. 21 CFR 880.6710 - Medical ultraviolet water purifier.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Medical ultraviolet water purifier. 880.6710... Miscellaneous Devices § 880.6710 Medical ultraviolet water purifier. (a) Identification. A medical ultraviolet water purifier is a device intended for medical purposes that is used to destroy bacteria in water by...

  2. Classical ultraviolet photoelectron spectroscopy of polymers

    International Nuclear Information System (INIS)

    Salaneck, W.R.

    2009-01-01

    Although X-ray photoelectron spectroscopy of polymers was well established by Clark and coworkers in the 1970s, ultraviolet photoelectron spectroscopy of polymer films, was developed later. Previous to the 1970s, the first attempts to use ultraviolet light on polymer films took the form of appearance potential (valence band edge) measurements. Only some years later could the full valence band region of thin polymer films, including insulating polymers, semiconducting polymers and electrically conducting polymers. The development of what might be termed 'classical ultraviolet photoelectron spectroscopy' of polymer films may be loosely based upon a variety of issues, including adapting thin polymer film technology to ultra high vacuum studies, the widespread use of helium resonance lamps for studies of solid surfaces, the combined advent of practical and sufficient theoretical-computational methods. The advent of, and the use of, easily available synchrotron radiation for multi-photon spectroscopies, nominally in the area of the near UV, is not included in the term 'classical'. At the same time, electrically conducting polymers were discovered, leading to applications of the corresponding semiconducting polymers, which added technologically driven emphasis to this development of ultraviolet photoelectron spectroscopy for polymer materials. This paper traces a limited number of highlights in the evolution of ultraviolet photoelectron spectroscopy of polymers, from the 1970s through to 2008. Also, since this issue is dedicated to Prof. Kazuhiko Seki, who has been a friend and competitor for over two decades, the author relies on some of Prof. Seki's earlier research, unpublished, on who-did-what-first. Prof. Seki's own contributions to the field, however, are discussed in other articles in this issue.

  3. Preparation, photoluminescent properties and luminescent dynamics of BaAlF{sub 5}:Eu{sup 2+} nanophosphors

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wei [Stem Cell and Tissue Engineering Laboratory, Dalian University of Technology, Dalian, Liaoning 116023 (China); College of Life Science, Dalian Nationalities University, Dalian, Liaoning 116600 (China); Hua, Ruinian, E-mail: rnhua@dlnu.edu.cn [College of Life Science, Dalian Nationalities University, Dalian, Liaoning 116600 (China); Liu, Tianqing, E-mail: liutq@dlut.edu.cn [Stem Cell and Tissue Engineering Laboratory, Dalian University of Technology, Dalian, Liaoning 116023 (China); Zhao, Jun [College of Life Science, Dalian Nationalities University, Dalian, Liaoning 116600 (China); Department of Physics, Dalian Maritime University, Dalian, Liaoning 116026 (China); Na, Liyan [College of Life Science, Dalian Nationalities University, Dalian, Liaoning 116600 (China); Chen, Baojiu [Department of Physics, Dalian Maritime University, Dalian, Liaoning 116026 (China)

    2014-12-15

    Graphical abstract: Rice-shaped BaAlF{sub 5}:Eu{sup 2+} nanophosphors were synthesized via one-pot hydrothermal process. The as-prepared BaAlF{sub 5}:Eu{sup 2+} are composed of many particles with an average diameter of 40 nm. When excited at 260 nm, the sharp line emission located at 361 nm of Eu{sup 2+} was observed. The optimum doping concentration of Eu{sup 2+} was confirmed to be 5 mol%. The strong ultraviolet emission of Eu{sup 2+} ions in BaAlF{sub 5}:Eu{sup 2+} nanoparticles suggests that these nanoparticles may have potential applications for sensing, solid-state lasers and spectrometer calibration. - Highlights: • BaAlF{sub 5}:Eu{sup 2+} nanophosphors were synthesized via a mild hydrothermal process. • The Van and Huang models were used to research the mechanism of concentration quenching. • The optimum doping concentration of Eu2+ was confirmed to be 5 mol%. - Abstract: Eu{sup 2+}-doped BaAlF{sub 5} nanophosphors were synthesized via a facile one-pot hydrothermal method. The final products were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and photoluminescence (PL) spectroscopy. XRD results showed that the prepared samples are single-phase. The FE-SEM and TEM images indicated that the prepared BaAlF{sub 5}:Eu{sup 2+} nanophosphors are composed of many rice-shaped particles with an average diameter of 40 nm. When excited at 260 nm, BaAlF{sub 5}:Eu{sup 2+} nanophosphors exhibit the sharp line emissions of Eu{sup 2+} at room temperature. The optimum doping concentration of Eu{sup 2+} was confirmed to be 5 mol%. The Van and Huang models were used to study the mechanism of concentration quenching and the electric dipole–dipole interaction between Eu{sup 2+} can be deduced to be a dominant for quenching fluorescence in BaAlF{sub 5}:Eu{sup 2+} nanophosphors. The strong ultraviolet emission of Eu{sup 2+} in BaAlF{sub 5}:Eu{sup 2+} nanophosphors suggests that

  4. Study of the energy band in n-type GaAs and p-type In P by transmission and photoluminescence spectroscopy

    International Nuclear Information System (INIS)

    Banai, N.; Khanzadeh, M.

    1998-01-01

    Optical characterization of the n-type In P grown by horizontal Bridgman method was carried out using modular photoluminescence and optical transmission spectroscopy. The measured transmission spectra at room temperature using Cary 17 DX spectrophotometer reveals the band gap energies of 1.4 and 1.34 eV for p-type In P and the n-type GaAs, respectively. Photoluminescence spectra of the above samples was measured at 77 K with the excitation intensity of (20 W/Cm 2 ). The (B-A) transitions occur at 1.405 eV and at 1.382 eV respectively. Three spectra were observed for the n-type GaAs sample, namely, (B-B), (B-A) and another relatively wide spectra at wavelengths above the absorption edge caused by the deep level impurities. The peak position of these spectra are 1.482, 1.4 and 1.36 eV respectively. (author)

  5. Ultraviolet detecting properties of amorphous MgInO thin film phototransistors

    International Nuclear Information System (INIS)

    Lu, Huiling; Bi, Xiaobin; Zhang, Shengdong; Zhou, Hang

    2015-01-01

    The ultraviolet (UV) detecting properties of Mg doped In 2 O 3 (MgInO or MIO) bottom gate thin film transistors (TFTs) were investigated. The optical measurements show that the introduction of Mg dopants effectively widens the optical band gap of In 2 O 3 . The cutoff wavelength of MIO films is pushed to deep UV as Mg content increases. Fabricated MIO TFTs with high Mg content demonstrate appraisable UV detecting properties with a dark current of 10 −14 A, a UV to visible rejection ratio of 10 3 , a responsivity of 3.2 A/W (300 nm) and a cutoff wavelength of 320 nm, which can be put to good use in deep UV detection. The dynamic photo-response measurement shows that the persistent photo-conductivity (PPC) effect can be alleviated by imposing a transient positive gate pulse. (paper)

  6. Deep Vein Thrombosis

    African Journals Online (AJOL)

    OWNER

    Deep Vein Thrombosis: Risk Factors and Prevention in Surgical Patients. Deep Vein ... preventable morbidity and mortality in hospitalized surgical patients. ... the elderly.3,4 It is very rare before the age ... depends on the risk level; therefore an .... but also in the post-operative period. ... is continuing uncertainty regarding.

  7. Characterization of as-grown and heavily irradiated GaN epitaxial structures by photoconductivity and photoluminescence

    International Nuclear Information System (INIS)

    Gaubas, E.; Jurs e-dot nas, S.; Tomasiunas, R.; Vaitkus, J.; Zukauskas, A.; Blue, A.; Rahman, M.; Smith, K.M.

    2005-01-01

    The influence of radiation defects on photoconductivity transients and photoluminescence (PL) spectra have been examined in semi-insulating GaN epitaxial layers grown on bulk n-GaN/sapphire substrates. Defects induced by 10-keV X-ray irradiation with a dose of 600Mrad and 100-keV neutrons with fluences of 5x10 14 and 10 16 cm -2 have been revealed through contact photoconductivity and microwave absorption transients. The amplitude of the initial photoconductivity decay is significantly reduced by the radiation defect density. A simultaneous decrease with radiation-induced defect density is also observed in the steady-state PL intensity of yellow, blue and ultraviolet bands peaked at 2.18, 2.85, and 3.42eV, respectively. The decrease of the PL intensity is accompanied by an increase of asymptotic decay lifetime, which is due to excess carrier multi-trapping. The decay can be described by the stretched exponential approximation exp[-(t/τ) α ] with different values of α in as-grown material (α∼0.7) and irradiated samples (α∼0.3). The value of the fracton dimension d s of the disordered structure, evaluated as d s =2α/(1-α), changes from 4.7 to 0.86 for as-grown and irradiated material, respectively, implying percolative carrier motion on an infinite cluster of dislocations net in the as-grown material and cluster fragmentation into finite fractons after irradiation

  8. EPR and photoluminescence properties of Mn2+ doped CdS nanoparticles synthesized via co-precipitation method.

    Science.gov (United States)

    Gupta, Atul K; Kripal, Ram

    2012-10-01

    The structural properties of Mn doped CdS (Mn:CdS) nanoparticles (NPs) are studied using X-ray diffraction (XRD), Transmission electron microscopy (TEM), Ultraviolet-visible (UV-vis), Photoluminescence (PL), Raman and Electron paramagnetic resonance (EPR) spectroscopy. XRD analysis shows the nanostructure with 2-4 nm of average crystallite size. The planes (110), (103) and (112) in XRD pattern distinguish the wurtzite structure of the Mn:CdS NPs. The intensity of the plane (102) increases as the doping concentration of Mn(2+) increases. UV-vis absorption spectra show blue shift as compared to bulk CdS. The optical band gap energy of Mn(2+) (0, 0.35, 0.70 and 1.35 at.%) doped CdS NPs corresponding to absorption edge are found to be 5.29, 5.28, 5.25 and 5.21 eV, respectively. The intensity of luminescence is changing with the concentration of Mn(2+) doped in CdS NPs. Raman spectra show blue shift in fundamental optical phonon mode (1LO) as well as second optical phonon mode (2LO) as compared to bulk CdS. The intensity ratio of the 2LO to 1LO modes slightly decreases as Mn(2+) concentration increases. EPR shows the existence of Mn(2+) with different local structures in CdS nanoparticles. The values of spectroscopic splitting factor (g) and hyperfine interaction constant (A) decrease as Mn(2+) concentration increases in CdS NPs. Copyright © 2012 Elsevier B.V. All rights reserved.

  9. Structure and photoluminescence of films composed of carbon nanoflakes

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yi, E-mail: wangyi@cqut.edu.cn [College of Mechanical Engineering, Chongqing University of Technology, 69 Hongguang Rd, Lijiatuo, Banan District, Chongqing 400054, P R China (China); Li, Lin [College of Chemistry, Chongqing Normal University, Chongqing 401331, P R China (China); Cheng, Qijin [School of Energy Research, Xiamen University, Xiamen 361005, P R China (China); He, Chunlin [Liaoning Provincial Key Laboratory of Advanced Materials, Shenyang University, Shenyang 110044, P R China (China)

    2015-05-15

    Carbon nanoflake films (CNFFs) were directly synthesized by plasma-enhanced hot filament chemical vapor deposition. The results of field emission scanning electron microscope, transmission electron microscope, micro-Raman spectroscope, X-ray photoelectron spectroscope and Fourier transform infrared spectroscope indicate that the CNFFs are composed of bending carbon nanoflakes with the hydrocarbon and hydroxyl functional groups, and the carbon nanoflakes become thin in a long deposition time. The structural change of carbon nanoflakes is related to the formation of structural units and the aggregation of hydrocarbon radicals near the carbon nanoflakes. Moreover, the photoluminescence (PL) properties of CNFFs were studied in a Ramalog system and a PL spectroscope. The PL results indicate that the PL intensity of CNFFs is lowered with the increase of thickness of CNFFs. The lowering of PL intensity for the thick CNFFs originates from the effect of more dangling bonds in the CNFFs. In addition, we studied the structural difference of carbon nanoflakes grown by different CVD systems and the PL difference of carbon nanoflakes in different measurement systems. The results achieved here are important to control the growth and structure of graphene-based materials and fabricate the optoelectronic devices related to carbon-based materials. - Highlights: • Carbon nanoflake films (CNFFs) were synthesized by PEHFCVD. • The structure of CNFFs is related to the aggregation of carbon hydrocarbon radicals. • The PL intensity of CNFFs is lowered with the thickness increase of CNFFs. • The change of PL intensity of CNFFs is due to the dangling bonds in CNFFs. • The widening of PL bands of CNFFs results from the diversity of carbon nanofalkes.

  10. Photoluminescence and lasing properties of ZnO nanorods

    International Nuclear Information System (INIS)

    Lee, Geon Joon; Lee, Young Pak; Min, Sun Ki; Han, Sung Hwan; Lim, Hwan Hong; Cha, Myoung Sik; Kim, Sung Soo; Cheong, Hyeon Sik

    2010-01-01

    In this study, we investigated the structures, photoluminescence (PL), and lasing characteristics of the ZnO nanorods prepared by using chemical bath deposition. The continuous-wave HeCd laser excited PL spectra of the ZnO nanorods exhibited two emission bands, one in the UV region and the other in the visible region. The UV emission band has its peak at 3.25 eV with a bandwidth of 160 meV. However, the PL spectra under 355-nm, 35-ps pulse excitation exhibited a spectrally-narrowed UV emission band with a peak at 3.20 eV and a spectral width of 35 meV. The lasing phenomena were ascribed to the amplified spontaneous emission (ASE) caused by coupling of the microcavity effect of ZnO nanorods and the high-intensity excitation. Above the lasing threshold, the ASE peak intensity exhibited a superlinear dependence on the excitation intensity. For an excitation pulse energy of 3 mJ, the ASE peak intensity was increased by enlarging the length of the ZnO nanorods from 1 μm to 4 μm. In addition, the PL spectrum under 800-nm femtosecond pulse excitation exhibited second harmonic generation, as well as the multiphoton absorption-induced UV emission band. In this research, ZnO nanorods were grown on seed layers by using chemical bath deposition in an aqueous solution of Zn(NO 3 ) 2 and hexamethyltetramine. The seed layers were prepared on conducting glass substrates by dip coating in an aqueous colloidal dispersion containing 50% 70-nm ZnO nanoparticles. Scanning electron microscopy clearly revealed that ZnO nanorods were successfully grown on the seed layers.

  11. Photoluminescence and thermally stimulated luminescence characteristics of rice flour

    International Nuclear Information System (INIS)

    Murthy, K.V.R.; Rey, L.; Belon, P.

    2007-01-01

    The present paper reports the photoluminescence (PL) and the thermoluminescence (TL) characteristics of rice flour. This study is undertaken to consider storage of rice at low temperature and irradiation for disinfection. From the Indian market a few varieties of rice was bought. All the samples of rice was ground using an agate motor and pestle. Thereafter, the powder was sieved to the size of 140 μm using appropriate sieves. When comparing the PL characteristics of the different rice powders studied, it is interesting to note that the PL emission wavelength (around 445 nm) is nearly same for all the rice varieties studied even though the excitation wave length is different. TL characteristics are studied in the temperature range 77-230 K as well as 300-700 K. TL is recorded for the virgin samples and also on irradiation of the same by exposing it to X-ray at 77 K, beta at 300 K and gamma at 77 K. The two varieties are given an X-ray dose of 1 kGy. The TL is recorded for 200 mg rice powder. The TL displayed for the as-received 1 kGy X- ray dose peak is around 160 K with a broad shoulder around 120 K. Basmati variety is given a gamma dose of 12.5 kGy and the TL and TL emission is recorded. It is seen that a well-defined low-temperature TL peak around 119 K and a hump around 145 K are observed in the sample. The TL emission is around 430 nm.The TL peak observed in most of the rice samples above room temperature is around 558 K

  12. Effect of illumination on photoluminescence properties of porous silicon

    International Nuclear Information System (INIS)

    Naddaf, M.; Hamadeh, H.

    2008-11-01

    Porous silicon (PS) layers were formed by photo-electrochemical etching of both p-type and n-type single crystal wafers in HF based solution. During the etching process, the silicon wafer was illuminated by a halogen lamp light guided by an optical fiber through a monochromator or diode lasers at different power density and wavelengths (480,533,580 and 635 nm). The optical and structural properties of the prepared PS samples have been investigated by using temperature dependent photoluminescence (PL) spectroscopy, Fourier Transform Infrared (FTIR) spectroscopy, contact angle (CA) measurements, optical microscope and atomic force microscope (AFM). Beside the strong red-yellow PL band, a blue PL band has been observed only in the PS samples formed under the illumination with low power and short wavelengths (480-580 nm) light. In the near infrared (IR) spectral range, a new PL band at 850 nm was observed in p-type PS samples, which prepared under darkness or illumination with 635 nm of low power light. Temperature dependent PL measurements showed that, in contrast to the main IR PL band at around 1100 nm, the intensity of this new band increases on increasing the temperature. These changes in the PL properties was correlated with the illumination induced-structural and morphological modifications in the PS skeleton. In particular, the FTIR analysis showed that the chemical groups and bonds constituting the PS skeleton, such as, SiH, SiO bonds and silanol SiOH group play key role in deciding the PL emission intensity and blue shift. The study proved that the illumination parameters during the photo-electrochemical etching process can be utilized for tailoring a porous layer with novel optical and structural properties. (Authors)

  13. Modeling of photoluminescence in laser-based lighting systems

    Science.gov (United States)

    Chatzizyrli, Elisavet; Tinne, Nadine; Lachmayer, Roland; Neumann, Jörg; Kracht, Dietmar

    2017-12-01

    The development of laser-based lighting systems has been the latest step towards a revolution in illumination technology brought about by solid-state lighting. Laser-activated remote phosphor systems produce white light sources with significantly higher luminance than LEDs. The weak point of such systems is often considered to be the conversion element. The high-intensity exciting laser beam in combination with the limited thermal conductivity of ceramic phosphor materials leads to thermal quenching, the phenomenon in which the emission efficiency decreases as temperature rises. For this reason, the aim of the presented study is the modeling of remote phosphor systems in order to investigate their thermal limitations and to calculate the parameters for optimizing the efficiency of such systems. The common approach to simulate remote phosphor systems utilizes a combination of different tools such as ray tracing algorithms and wave optics tools for describing the incident and converted light, whereas the modeling of the conversion process itself, i.e. photoluminescence, in most cases is circumvented by using the absorption and emission spectra of the phosphor material. In this study, we describe the processes involved in luminescence quantum-mechanically using the single-configurational-coordinate diagram as well as the Franck-Condon principle and propose a simulation model that incorporates the temperature dependence of these processes. Following an increasing awareness of climate change and environmental issues, the development of ecologically friendly lighting systems featuring low power consumption and high luminous efficiency is imperative more than ever. The better understanding of laser-based lighting systems is an important step towards that aim as they may improve on LEDs in the near future.

  14. Effect of illumination on photoluminescence properties of porous silicon

    International Nuclear Information System (INIS)

    Naddaf, M.; Hamadeh, H.

    2009-01-01

    Porous silicon (PS) layers were formed by photo-electrochemical etching of both p-type and n-type single crystal wafers in HF based solution. During the etching process, the silicon wafer was illuminated by a halogen lamp light guided by an optical fiber through a monochromator or diode lasers at different power density and wavelengths (480,533,580 and 635 nm). The optical and structural properties of the prepared PS samples have been investigated by using temperature dependent photoluminescence (PL) spectroscopy, Fourier Transform Infrared (FTIR) spectroscopy, contact angle (CA) measurements, optical microscope and atomic force microscope (AFM). Beside the strong red-yellow PL band, a blue PL band has been observed only in the PS samples formed under the illumination with low power and short wavelengths (480-580 nm) light. In the near infrared (IR) spectral range, a new PL band at 850 nm was observed in p-type PS samples, which prepared under darkness or illumination with 635 nm of low power light. Temperature dependent PL measurements showed that, in contrast to the main IR PL band at around 1100 nm, the intensity of this new band increases on increasing the temperature. These changes in the PL properties was correlated with the illumination induced-structural and morphological modifications in the PS skeleton. In particular, the FTIR analysis showed that the chemical groups and bonds constituting the PS skeleton, such as, SiH, SiO bonds and silanol SiOH group play key role in deciding the PL emission intensity and blue shift. The study proved that the illumination parameters during the photo-electrochemical etching process can be utilized for tailoring a porous layer with novel optical and structural properties. (Authors)

  15. Enormous enhancement of ZnO nanorod photoluminescence

    International Nuclear Information System (INIS)

    Wang, Y.H.; Duan, W.J.; Wu, Z.L.; Zheng, D.; Zhou, X.W.; Zhou, B.Y.; Dai, L.J.; Wang, Y.S.

    2012-01-01

    ZnO nanorod arrays were grown on quartz slices in the aqueous solution of zinc acetate and hexamethylenetetramine at 90 °C. Then ZnO:Mg shells were epitaxially grown on the nanorods to form core/shell structures in the aqueous solution of zinc acetate, magnesium acetate and hexamethylenetetramine at the same temperature. Effects of the shells and UV laser beam irradiation on the crystal structure and photoluminescence properties of ZnO nanorods were studied. ZnO:Mg shells suppress the green emission and enhance the UV emission intensity of the nanorods by 38 times. Enhancement of the UV emission depends on the Mg content in the shells. Short time UV laser beam irradiation could improve ZnO nanorod emission efficiently. The UV emission intensity of ZnO nanorods is enhanced by 71 times by capping and subsequent UV laser beam irradiation. - Highlights: ► ZnO nanorod arrays were grown on quartz slices in solution at 90 °C. ► The nanorods were capped by ZnO:Mg layers to form core/shell structures. ► ZnO:MgO shells suppress the green emission and enhance the UV emission intensity by 38 times. ► The enhancement depends on the Mg content in the shells. ► Exposing the nanorods to 325 laser beam improves the UV emission efficiently. ► Capping and 325 nm laser beam irradiation could enhance the nanorod UV emission intensity by 71 times.

  16. The spreading of focal brain edema induced by ultraviolet irradiation

    International Nuclear Information System (INIS)

    Ferszt, R.; Neu, S.; Cervos-Navarro, J.; Sperner, J.

    1978-01-01

    Focal brain edema limited to one cerebral hemisphere was produced by ultraviolet irradiation of the exposed cortex. Tissue water content was determined by the gravimetric method which allows microsampling. Therefore, the spread of edema around the small necrotic area be mapped more precisely than by determination of dry weight which calls for larger samples. As early as 30 min after irradiation, hyperemia and swelling of the brain are observed under the operating microscope. This correlates with venous stasis, hyperemia, and broadened perivascular spaces around venules and large capillaries accompanied by a marked rise in the specific weigth of the tissue. After 4h an edema front can be observed spreading from the perinerotic zone in which there is a marked rise in endothelial cell vesicular activity. Edema reaches maximum levels in the deep white matter at 48h post irradiation with normalisation of the tissue water content after 96h. The velocity at which the edema front spreads from the cortex to the periventricular area lies in the range of 0.25mm/h. Edema reabsorption coincides with signs of retrograde micropinocytosis in endothelial cells. (orig./AJ) [de

  17. The effect of ultraviolet radiation on the cornea - experimental study.

    Science.gov (United States)

    Golu, Andreea; Gheorghişor, Irina; Bălăşoiu, A T; Baltă, Fl; Osiac, E; Mogoantă, L; Bold, Adriana

    2013-01-01

    Ultraviolet (UV) radiation in high doses may have harmful effects on the eye. The sources of UV radiation are the sun, as well as some artificial sources such as UV lamps or voltaic arcs. Chronic exposure to UV can cause damage to the anterior pole of the eye, ranging from minor (pterygium) to serious photokeratitis. In our study, we applied a UV dose of 6.5 J/cm(2) in the wavelength range of 290-400 nm, for five consecutive days per rat anterior pole of the eye. Seven days after the last dose of radiation, the animals were sacrificed, harvesting both the irradiated and the non-irradiated eye. Histological and immunohistochemical examination of the lesions revealed that the greatest damage to the epithelium was recorded prior to and 2/3 of the remaining corneal stroma. The epithelial lesions we found varied from pseudokeratosis and detachment of the Bowman epithelium membrane to deep epithelial necrosis. Within the corneal stroma, we observed the formation of interstitial edema with disruption of the collagen structure. We also noticed the presence of an inflammatory infiltrate composed mainly of lymphocytes and CD68+ and CD163+ macrophages, as well as the occurrence of vascular devices. These consisted of angiogenesis capillaries with structured wall composed mainly of endothelial CD34+ precursor cells and a basal membrane rich in collagen IV fibers.

  18. AN UPDATED ULTRAVIOLET CATALOG OF GALEX NEARBY GALAXIES

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Yu; Zou, Hu; Liu, JiFeng; Wang, Song, E-mail: ybai@nao.cas.cn, E-mail: zouhu@nao.cas.cn, E-mail: jfliu@nao.cas.cn, E-mail: songw@nao.cas.cn [Key Laboratory of Optical Astronomy, National Astronomical Observatories, Chinese Academy of Sciences, 20A Datun Road, Chaoyang Distict, 100012 Beijing (China)

    2015-09-15

    The ultraviolet (UV) catalog of nearby galaxies compiled by Gil de Paz et al. presents the integrated photometry and surface brightness profiles for 1034 nearby galaxies observed by GALEX. We provide an updated catalog of 4138 nearby galaxies based on the latest Genral Release (GR6/GR7) of GALEX. These galaxies are selected from HyperLeda with apparent diameters larger than 1′. From the surface brightness profiles accurately measured using the deep NUV and FUV images, we have calculated the asymptotic magnitudes, aperture (D25) magnitudes, colors, structural parameters (effective radii and concentration indices), luminosities, and effective surface brightness for these galaxies. Archival optical and infrared photometry from HyperLeda, 2MASS, and IRAS are also integrated into the catalog. Our parameter measurements and some analyses are consistent with those of Paz et al. The (FUV − K) color provides a good criterion to distinguish between early- and late-type galaxies, which can be improved further using the concentration indices. The IRX–β relation is reformulated with our UV-selected nearby galaxies.

  19. Spreading of focal brain edema induced by ultraviolet irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ferszt, R; Neu, S; Cervos-Navarro, J; Sperner, J [Freie Univ. Berlin (Germany, F.R.). Inst. fuer Neuropathologie

    1978-01-01

    Focal brain edema limited to one cerebral hemisphere was produced by ultraviolet irradiation of the exposed cortex. Tissue water content was determined by the gravimetric method which allows microsampling. Therefore, the spread of edema around the small necrotic area be mapped more precisely than by determination of dry weight which calls for larger samples. As early as 30 min after irradiation, hyperemia and swelling of the brain are observed under the operating microscope. This correlates with venous stasis, hyperemia, and broadened perivascular spaces around venules and large capillaries accompanied by a marked rise in the specific weigth of the tissue. After 4h an edema front can be observed spreading from the perinerotic zone in which there is a marked rise in endothelial cell vesicular activity. Edema reaches maximum levels in the deep white matter at 48h post irradiation with normalisation of the tissue water content after 96h. The velocity at which the edema front spreads from the cortex to the periventricular area lies in the range of 0.25mm/h. Edema reabsorption coincides with signs of retrograde micropinocytosis in endothelial cells.

  20. Effect of ultraviolet exposure on mitochondrial respiratory system

    Energy Technology Data Exchange (ETDEWEB)

    Noda, K [Kurume Univ., Fukuoka (Japan). School of Medicine

    1975-09-01

    To find the photodynamic effect of ultraviolet light on the mitochondrial respiratory chain, mitochondria were obtained from rat livers, and the suspension was exposed to an extensive ultraviolet light. The oxygen consumption was measured polarographically with a Clark oxygen electrode. The effect of ultraviolet exposure on the five states of respiratory control (Chance and Williams), the P/O ratio, and the respiratory control index in mitochondria was discussed. The ultraviolet light with a dose of 9.6 x 10/sup 6/ erg/cm/sup 2/ caused the oxidative phosphorylation in mitochondria to uncouple. The 2nd phosphorylation site of the respiratory chain was susceptible to ultraviolet exposure. The stimulation of latent ATPase activity in mitochondria following exposure was observed by increasing exposure of ultraviolet light. However, DNP-stimulated ATPase was found to be stable in activity. The uncoupling of the respiratory chain by ultraviolet exposure was not detected if the mitochondrial suspension was preincubated with bovine serum albumin before exposure. The changes in light absorption of the mitochondrial suspension were followed at 520 nm after exposure. A close correlation was found between the ultraviolet exposure and swelling in mitochondria. But, the reversing contraction was observed by adding ATP to the swelled mitochondria. The peroxide compound was formed in mitochondria irradiated with ultraviolet light. The amount of compounds formed was dependent on the radiant energy of ultraviolet light. The possible mechanisms involved in the photodynamic effect of ultraviolet light to the mitochondrial respiration system were discussed.

  1. Deep Echo State Network (DeepESN): A Brief Survey

    OpenAIRE

    Gallicchio, Claudio; Micheli, Alessio

    2017-01-01

    The study of deep recurrent neural networks (RNNs) and, in particular, of deep Reservoir Computing (RC) is gaining an increasing research attention in the neural networks community. The recently introduced deep Echo State Network (deepESN) model opened the way to an extremely efficient approach for designing deep neural networks for temporal data. At the same time, the study of deepESNs allowed to shed light on the intrinsic properties of state dynamics developed by hierarchical compositions ...

  2. Ultraviolet photosensors fabricated with Ag nanowires coated with ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Guan-Hung [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Hong, Franklin Chau-Nan, E-mail: hong@mail.ncku.edu.tw [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); NCKU Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (China)

    2014-11-03

    We have developed a simple low temperature process to coat zinc oxide (ZnO) nanoparticles (NPs) on Ag nanowires (NWs) with well-controlled morphology. Triethanolamine (TEA) was employed to react with zinc acetate (Zn(CH{sub 3}COO){sub 2}) forming ZnO NPs. TEA was also found to enhance the nucleation and binding of ZnO NPs on the Ag nanowire surfaces facilitating a complete coverage of Ag nanowire surfaces with ZnO NPs. The effects of the process parameters including reaction time and reaction temperature were studied. The surfaces of 60 nm diameter Ag NWs could be completely covered with ZnO NPs with the final diameters of Ag-NWs@ZnO (core–shell NWs) turning into the range from 100 nm to 450 nm. The Ag-NWs@ZnO was characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray mapping analysis, X-ray diffraction, and photoluminescence spectra. Finally, ultraviolet (UV) photosensors were fabricated using Ag-NWs@ZnO. They were found to improve photosensitivity with greatly enhanced fast response by reducing the recovery time by 2 orders, in comparison with the UV-sensors using single-crystalline ZnO NWs. - Highlights: • Solution process to coat ZnO nanoparticles on Ag nanowires has been developed. • Ultraviolet photosensing of ZnO nanoparticles coated on the Ag nanowires was found. • High defect concentration of ZnO nanoparticles enhanced the photosensing properties.

  3. Synthesis and Photoluminescence Properties of Ca2Ga2SiO7:Eu(3+) Red Phosphors with an Intense (5)D0 → (7)F4 Transition.

    Science.gov (United States)

    Behrh, Gaganpreet Kaur; Gautier, Romain; Latouche, Camille; Jobic, Stéphane; Serier-Brault, Hélène

    2016-09-19

    Novel melilite-type Ca2Ga2SiO7:Eu(3+) red-emitting phosphors with different Eu(3+) contents were synthesized via high-temperature solid-state reaction. The crystal structure, optical absorption, and photoluminescence properties were investigated, while density functional theory calculations were performed on the host lattice. The excitation spectra indicate that phosphors can be effectively excited by near-UV light for a potential application in white-light-emitting diodes. Because of the abnormally high intensity emission at about 700 nm arising from the (5)D0 → (7)F4 transition of Eu(3+), the phosphors Ca2Ga2SiO7:Eu(3+) show a deep-red emission with chromaticity coordinates (0.639, 0.358).

  4. ULTRAVIOLET HALOS AROUND SPIRAL GALAXIES. I. MORPHOLOGY

    Energy Technology Data Exchange (ETDEWEB)

    Hodges-Kluck, Edmund; Cafmeyer, Julian; Bregman, Joel N., E-mail: hodgeskl@umich.edu [Department of Astronomy, University of Michigan, Ann Arbor, MI 48109 (United States)

    2016-12-10

    We examine ultraviolet halos around a sample of highly inclined galaxies within 25 Mpc to measure their morphology and luminosity. Despite contamination from galactic light scattered into the wings of the point-spread function, we find that ultraviolet (UV) halos occur around each galaxy in our sample. Around most galaxies the halos form a thick, diffuse disk-like structure, but starburst galaxies with galactic superwinds have qualitatively different halos that are more extensive and have filamentary structure. The spatial coincidence of the UV halos above star-forming regions, the lack of consistent association with outflows or extraplanar ionized gas, and the strong correlation between the halo and galaxy UV luminosity suggest that the UV light is an extragalactic reflection nebula. UV halos may thus represent 10{sup 6}–10{sup 7} M {sub ⊙} of dust within 2–10 kpc of the disk, whose properties may change with height in starburst galaxies.

  5. Contact lens disinfection by ultraviolet light

    International Nuclear Information System (INIS)

    Dolman, P.J.; Dobrogowski, M.J.

    1989-01-01

    A 253.7-nm ultraviolet light with an intensity of 1,100 microW/cm2 was tested for its germicidal activity against contact lenses and storage solutions contaminated with various corneal pathogens. The exposure time necessary to reduce a concentration of organisms from 10(6)/ml to less than 10/ml was 30 seconds for Staphylococcus aureus, 60 seconds for Pseudomonas aeruginosa, and 84 seconds for Candida albicans. The time necessary to sterilize a suspension of 10(4)/ml Acanthamoeba polyphaga was less than three minutes with this technique. Four brands of soft contact lenses were exposed to ultraviolet light for over eight hours without changing their appearance, comfort, or refraction

  6. Effective polycrystalline sensor of ultraviolet radiation

    Directory of Open Access Journals (Sweden)

    S.Yu. Pavelets

    2017-10-01

    Full Text Available Deposition of special thin layers with high and low resistance in space charge region of surface barrier photoconverters based on the p-Cu1.8S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable polycrystalline photoconverters of ultraviolet radiation based on polycrystalline CdS have been obtained. Electrical and photoelectric properties have been investigated, and the main operational parameters of ultraviolet sensors have been adduced. The reasons for high stability of the parameters inherent to the p-Cu1.8S/n-CdS sensors are as follows: the absence of impurity components additionally doped to the barrier structure and stability of the photocurrent photoemission component.

  7. Subdwarf ultraviolet excesses and metal abundances

    International Nuclear Information System (INIS)

    Carney, B.W.

    1979-01-01

    The relation between stellar ultraviolet excesses and abundances is reexamined with the aid of new data, and an investigation is made of the accuracy of previous abundance analyses. A high-resolution echellogram of the subdwarf HD 201891 is analyzed to illustrate some of the problems. Generally, the earliest and latest analytical techniques yield consistent results for dwarfs. New UBV data yield normalized ultraviolet excesses, delta (U-B)/sub 0.6/, which are compared to abundances to produce a graphical relation that may be used to estimate [Fe/H] to +- 0.2 dex, given UBV colors accurate to +- 0.01 mag. The relation suggests a possible discontinuity between the halo and old-disk stars

  8. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Monemar, Bo [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Lindgren, David; Samuelson, Lars [Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Ni, Xianfeng; Morkoc, Hadis [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072 (United States); Paskova, Tanya [Kyma Technologies Inc., Raleigh, North Carolina 27617 (United States); Bi, Zhaoxia; Ohlsson, Jonas [Glo AB, Ideon Science Park, Scheelevaegen 17, 223 70 Lund (Sweden)

    2011-07-15

    Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10{sup 18} cm{sup -3} to above 10{sup 20} cm{sup -3}. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly discussed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Composition-dependent photoluminescence properties of CuInS_2/ZnS core/shell quantum dots

    International Nuclear Information System (INIS)

    Hua, Jie; Du, Yuwei; Wei, Qi; Yuan, Xi; Wang, Jin; Zhao, Jialong; Li, Haibo

    2016-01-01

    CuInS_2/ZnS (CIS/ZnS) core/shell quantum dots (QDs) with various Cu/In ratios were synthesized using the hot-injection method, and their photoluminescence (PL) properties were investigated by measuring steady-state and time-resolved PL spectroscopy. The emission peak of the CIS/ZnS QDs were tuned from 680 to 580 nm by decreasing the Cu/In precursor ratio from 1/1 to 1/9. As the Cu/In ratio decreases, the PL lifetimes and PL quantum yields (QYs) of CIS/ZnS core/shell QDs increased firstly and then decreased. Two dominant radiative recombination processes were postulated to analyze composition-dependent PL properties, including the recombination from a quantized conduction band to deep defects state and donor-acceptor pair (DAP) recombination. The decrease of PL efficiency resulted from high density defects and traps, which formed at the interface between CIS core and ZnS shell due to the large off-stoichiometry composition. The PL intensity and peak energy for CIS/ZnS core/shell QDs as a function of temperature were also provided. The thermal quenching further confirmed that the PL emission of CIS/ZnS QDs did not come from the recombination of excitons but from the recombination of many kinds of intrinsic defects inside the QDs as emission centers.

  10. Photoluminescence, reddish orange long persistent luminescence and photostimulated luminescence properties of praseodymium doped CdGeO3 phosphor

    International Nuclear Information System (INIS)

    Jin, Yahong; Hu, Yihua; Chen, Li; Fu, Yinrong; Mu, Zhongfei; Wang, Tao; Lin, Jun

    2014-01-01

    Highlights: • A novel phosphor CdGeO 3 :Pr 3+ was synthesized successfully. • The persistent luminescence properties of CdGeO 3 :Pr 3+ were studied. • The photostimulated luminescence properties of CdGeO 3 :Pr 3+ were investigated. • The persistent and photostimulated luminescence mechanisms were discussed in detail. - Abstract: Praseodymium doped CdGeO 3 phosphors were prepared successfully by a conventional high temperature solid-state reaction method. It showed reddish orange long persistent luminescence (LPL) after the short UV-irradiation. The reddish orange photostimulated luminescence (PSL) was also observed upon near infrared stimulation at 980 nm after per-exposure into UV light. The origin of LPL and PSL was identified with the emission from Pr 3+ ions with the aid of traps in host lattice. The optimal concentration of Pr 3+ ions for the brightest photoluminescence (PL) emission and the best LPL characteristic were experimentally to be about 3% and 0.5 mol%, respectively. The trapping and de-trapping processes of charge carriers between shallower and deep traps were illustrated. A model was proposed on the basis of experimental results to study the mechanisms of LPL and PSL

  11. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    CERN Document Server

    Chen, S J; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn sub 3 P sub 2. Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I sub 4) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrate...

  12. Photoluminescence, modulation spectroscopy and surface photovoltage characterization of quaternary Zn1-x-yCdxMgySe compounds

    International Nuclear Information System (INIS)

    Dumcenco, D.O.; Levcenco, S.V.; Huang, Y.S.; Firszt, F.; Hsu, H.P.; Tiong, K.K.

    2011-01-01

    An optical characterization of wurtzite Zn 1-x-y Cd x Mg y Se crystalline alloys grown by the modified high-pressure Bridgman method has been carried out by temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) in the temperature range of 10-300 K, and photoreflectance (PR) measurements between 300-400 K as well as surface photovoltage spectroscopy (SPS) at 300 K. Low temperature PL spectra of the investigated samples consist of an excitonic line, the 'edge emission' due to radiative recombination of shallow donor-acceptor pairs and a broad band related to recombination through deep level defects. Three excitonic features, A, B and C, in the vicinity of band edge were observed in the CER and PR spectra. The peak positions of band-edge excitonic features in the PL spectra are shifted slightly towards lower energies as compared to the lowest corresponding transition energies of A exciton determined from CER and PR data. The increase of the CER-PL shift with the increasing of Mg content in the investigated crystals is explained by the rising of compositional disorder causing the smearing of the band-edge energies. In addition, the coincidence of energy positions of features obtained from SPS measurements with excitonic transition energies E 0 A determined from CER/PR data at 300 K confirm the proper surface treatment of the samples. (authors)

  13. Photoluminescence properties of ZnO films grown on InP by thermally oxidizing metallic Zn films

    International Nuclear Information System (INIS)

    Chen, S J; Liu, Y C; Zhang, J Y; Lu, Y M; Shen, D Z; Fan, X W

    2003-01-01

    Photoluminescence (PL) properties of ZnO films grown on (001) InP substrates by thermal oxidization of metallic Zn films, in which oxygen vacancies and interstitial Zn ions are compensated by P ions diffusing from (001) InP substrates, are investigated. X-ray diffraction spectra indicate that P ions have diffused into the Zn films and chemically combined with Zn ions to form Zn 3 P 2 . Intense free exciton emission dominates the PL spectra of ZnO films with very weak deep-level emission. Low-temperature PL spectra at 79 K are dominated by neutral-donor bound exciton emission at 3.299 eV (I 4 ) with a linewidth of 17.3 meV and neutral-acceptor bound exciton emission at 3.264 eV. The free exciton emission increases with increasing temperature and eventually dominates the emission spectrum for temperature higher than 170 K. Furthermore, the visible emission around 2.3 eV correlated with oxygen deficiencies and interstitial Zn defects was quenched to a remarkable degree by P diffusing from InP substrates

  14. Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique

    Directory of Open Access Journals (Sweden)

    N. Poornima

    2013-01-01

    Full Text Available This work projects photoluminescence (PL as an alternative technique to estimate the order of resistivity of zinc oxide (ZnO thin films. ZnO thin films, deposited using chemical spray pyrolysis (CSP by varying the deposition parameters like solvent, spray rate, pH of precursor, and so forth, have been used for this study. Variation in the deposition conditions has tremendous impact on the luminescence properties as well as resistivity. Two emissions could be recorded for all samples—the near band edge emission (NBE at 380 nm and the deep level emission (DLE at ~500 nm which are competing in nature. It is observed that the ratio of intensities of DLE to NBE (/ can be reduced by controlling oxygen incorporation in the sample. - measurements indicate that restricting oxygen incorporation reduces resistivity considerably. Variation of / and resistivity for samples prepared under different deposition conditions is similar in nature. / was always less than resistivity by an order for all samples. Thus from PL measurements alone, the order of resistivity of the samples can be estimated.

  15. Cosmetic and medical applications of ultraviolet radiation

    International Nuclear Information System (INIS)

    Diffey, B.L.

    1987-01-01

    The social desirability of a tanned skin is apparent and many people associate a bronzed body with good health and a sense of well-being. In Northern Europe and America the lack of long periods of sunshine has led to the establishment of the suntanning industry where artificial sources of ultraviolet radiation emitting almost entirely in the UV-A region supplement sunlight exposure

  16. Ultraviolet stability in euclidean scalar field theories

    Energy Technology Data Exchange (ETDEWEB)

    Benfatto, G; Cassandro, M; Gallavotti, G; Nicolo, F; Olivieri, E; Presutti, E; Scacciatelli, E [Rome Univ. (Italy). Istituto di Matematica; Rome Univ. (Italy). Istituto di Fisica)

    1980-01-01

    We develop a technique for reducing the problem of the ultraviolet divergences and their removal to a free field problem. This work is an example of a problem to which a rather general method can be applied. It can be thought as an attempt towards a rigorous version (in 2 or 3 space-time dimensions) of the analysis of the structure of the functional integrals, the underlying mechanism being essentially the same as in Glimms approach.

  17. Ultraviolet signals in birds are special.

    OpenAIRE

    Hausmann, Franziska; Arnold, Kathryn E; Marshall, N Justin; Owens, Ian P F

    2003-01-01

    Recent behavioural experiments have shown that birds use ultraviolet (UV)-reflective and fluorescent plumage as cues in mate choice. It remains controversial, however, whether such UV signals play a special role in sexual communication, or whether they are part of general plumage coloration. We use a comparative approach to test for a general association between sexual signalling and either UV-reflective or fluorescent plumage. Among the species surveyed, 72% have UV colours and there is a si...

  18. Impurity study of TMX using ultraviolet spectroscopy

    International Nuclear Information System (INIS)

    Allen, S.L.; Strand, O.T.; Moos, H.W.; Fortner, R.J.; Nash, T.J.; Dietrich, D.D.

    1981-01-01

    An extreme ultraviolet (EUV) study of the emissions from intrinsic and injected impurities in TMX is presented. Two survey spectrographs were used to determine that the major impurities present were oxygen, nitrogen, carbon, and titanium. Three absolutely-calibrated monochromators were used to measure the time histories and radial profiles of these impurity emissions in the central cell and each plug. Two of these instruments were capable of obtaining radial profiles as a function of time in a single shot

  19. Minimal length uncertainty relation and ultraviolet regularization

    Science.gov (United States)

    Kempf, Achim; Mangano, Gianpiero

    1997-06-01

    Studies in string theory and quantum gravity suggest the existence of a finite lower limit Δx0 to the possible resolution of distances, at the latest on the scale of the Planck length of 10-35 m. Within the framework of the Euclidean path integral we explicitly show ultraviolet regularization in field theory through this short distance structure. Both rotation and translation invariance can be preserved. An example is studied in detail.

  20. Deep learning in bioinformatics.

    Science.gov (United States)

    Min, Seonwoo; Lee, Byunghan; Yoon, Sungroh

    2017-09-01

    In the era of big data, transformation of biomedical big data into valuable knowledge has been one of the most important challenges in bioinformatics. Deep learning has advanced rapidly since the early 2000s and now demonstrates state-of-the-art performance in various fields. Accordingly, application of deep learning in bioinformatics to gain insight from data has been emphasized in both academia and industry. Here, we review deep learning in bioinformatics, presenting examples of current research. To provide a useful and comprehensive perspective, we categorize research both by the bioinformatics domain (i.e. omics, biomedical imaging, biomedical signal processing) and deep learning architecture (i.e. deep neural networks, convolutional neural networks, recurrent neural networks, emergent architectures) and present brief descriptions of each study. Additionally, we discuss theoretical and practical issues of deep learning in bioinformatics and suggest future research directions. We believe that this review will provide valuable insights and serve as a starting point for researchers to apply deep learning approaches in their bioinformatics studies. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.