A study of ion implanted gallium arsenide using deep level transient spectroscopy

International Nuclear Information System (INIS)

Emerson, N.G.

1981-03-01

This thesis is concerned with the study of deep energy levels in ion implanted gallium arsenide (GaAs) using deep level transient spectroscopy (D.L.T.S.). The D.L.T.S. technique is used to characterise deep levels in terms of their activation energies and capture cross-sections and to determine their concentration profiles. The main objective is to characterise the effects on deep levels, of ion implantation and the related annealing processes. In the majority of cases assessment is carried out using Schottky barrier diodes. Low doses of selenium ions 1 to 3 x 10 12 cm -2 are implanted into vapour phase epitaxial (V.P.E.) GaAs and the effects of post-implantation thermal and pulsed laser annealing are compared. The process of oxygen implantation with doses in the range 1 x 10 12 to 5 x 10 13 cm -2 followed by thermal annealing at about 750 deg C, introduces a deep level at 0.79 eV from the conduction band. Oxygen implantation, at doses of 5 x 10 13 cm -2 , into V.P.E. GaAs produces a significant increase in the concentration of the A-centre (0.83 eV). High doses of zinc (10 15 cm -2 ) are implanted into n-type V.P.E. GaAs to form shallow p-type layers. The D.L.T.S. system described in the text is used to measure levels in the range 0.16 to 1.1 eV (for GaAs) with a sensitivity of the order 1:10 3 . (U.K.)

Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

Science.gov (United States)

Peaker, A. R.; Markevich, V. P.; Coutinho, J.

2018-04-01

The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for characterizing deep-level defects in semiconductors and present some of the early work on which the principles of today's methodology are based. We outline ab-initio calculations of defect properties and give examples of how density functional theory in conjunction with formation energy and marker methods can be used to guide the interpretation of experimental results. We review recombination, generation, and trapping of charge carriers associated with defects. We consider thermally driven emission and capture and describe the techniques of Deep Level Transient Spectroscopy (DLTS), high resolution Laplace DLTS, admittance spectroscopy, and scanning DLTS. For the study of minority carrier related processes and wide gap materials, we consider Minority Carrier Transient Spectroscopy (MCTS), Optical DLTS, and deep level optical transient spectroscopy together with some of their many variants. Capacitance, current, and conductance measurements enable carrier exchange processes associated with the defects to be detected. We explain how these methods are used in order to understand the behaviour of point defects and the determination of charge states and negative-U (Hubbard correlation energy) behaviour. We provide, or reference, examples from a wide range of materials including Si, SiGe, GaAs, GaP, GaN, InGaN, InAlN, and ZnO.

Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

International Nuclear Information System (INIS)

Alfieri, G.; Kimoto, T.

2013-01-01

We show that Laplace transform deep level transient spectroscopy (LDLTS) is an effective technique for the separation of the overlapping emission rates of the EH 6 and EH 7 levels, which are known to constitute EH 6/7 , a mid-gap level in n-type 4H-SiC. The analysis of the electron irradiation dose, electric field dependence, and the effects of carbon interstitials injection on the emission rates of EH 6 and EH 7 shows that EH 7 is dominant over EH 6 and confirms that their nature is related to a carbon vacancy.

Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors

Science.gov (United States)

Deng, A. H.; Shan, Y. Y.; Fung, S.; Beling, C. D.

2002-03-01

Unlike its conventional applications in lattice defect characterization, positron annihilation lifetime technique was applied to study temperature-dependent deep level transients in semiconductors. Defect levels in the band gap can be determined as they are determined by conventional deep level transient spectroscopy (DLTS) studies. The promising advantage of this application of positron annihilation over the conventional DLTS is that it could further extract extra microstructure information of deep-level defects, such as whether a deep level defect is vacancy related or not. A demonstration of EL2 defect level transient study in GaAs was shown and the EL2 level of 0.82±0.02 eV was obtained by a standard Arrhenius analysis, similar to that in conventional DLTS studies.

High resolution deep level transient spectroscopy and process-induced defects in silicon

International Nuclear Information System (INIS)

Evans-Freeman, J.H.; Emiroglu, D.; Vernon-Parry, K.D.

2004-01-01

High resolution, or Laplace, deep level transient spectroscopy (LDLTS) enables the identification of very closely spaced energetic levels in a semiconductor bandgap. DLTS may resolve peaks with a separation of tens of electron volts, but LDLTS can resolve defect energy separations as low as a few MeV. In this paper, we present results from LDLTS applied to ion implantation-induced defects in silicon, with particular emphasis on characterisation of end-of-range interstitial type defects. Silicon was implanted with a variety of ions from mass 28 to 166. A combination of LDLTS and direct capture cross-section measurements was employed to show that electrically active small extended defects were present in the as-implanted samples. Larger dislocations were then generated in Si by oxygenation to act as a control sample. These stacking faults had typical lengths of microns, and their electrical activity was subsequently characterised by LDLTS. This was to establish the sensitivity of LDLTS to defects whose carrier capture is characterised by a non-exponential filling process and an evolving band structure as carrier capture proceeds. The LDLTS spectra show several components in capacitance transients originating from both the end-of-range defects, and the stacking faults, and also clearly show that the carrier emission rates reduce as these extended defects fill with carriers. The end-of-range defects and the stacking faults are shown to have the same electrical behaviour

Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

Science.gov (United States)

Yoon, Yohan; Yan, Yixin; Ostrom, Nels P.; Kim, Jinwoo; Rozgonyi, George

2012-11-01

Continuous-Czochralski (c-Cz) crystal growth has been suggested as a viable technique for the fabrication of photovoltaic Si wafers due to its low resistivity variation of any dopant, independent of segregation, compared to conventional Cz. In order to eliminate light induced degradation due to boron-oxygen traps in conventional p-type silicon wafers, gallium doped wafers have been grown by c-Cz method and investigated using four point probe, deep level transient spectroscopy (DLTS), and microwave-photoconductance decay. Iron-gallium related electrically active defects were identified using DLTS as the main lifetime killers responsible for reduced non-uniform lifetimes in radial and axial positions of the c-Cz silicon ingot. A direct correlation between minority carrier lifetime and the concentration of electrically active Fe-Ga pairs was established.

Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

International Nuclear Information System (INIS)

Zhu Qing; Ma Xiao-Hua; Chen Wei-Wei; Hou Bin; Zhu Jie-Jie; Zhang Meng; Chen Li-Xiang; Cao Yan-Rong; Hao Yue

2016-01-01

Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors (HEMTs) has been widely utilized. The DLTS measurements under different bias conditions are carried out in this paper. Two hole-like traps with active energies of E v + 0.47 eV, and E v + 0.10 eV are observed, which are related to surface states. The electron traps with active energies of E c − 0.56 eV are located in the channel, those with E c − 0.33 eV and E c − 0.88 eV are located in the AlGaN layer. The presence of surface states has a strong influence on the detection of electron traps, especially when the electron traps are low in density. The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state. (paper)

Evidence for two distinct defects contributing to the H4 deep-level transient spectroscopy peak in electron-irradiated InP

International Nuclear Information System (INIS)

Darwich, R.; Massarani, B.; Kaaka, M.; Awad, F.

2000-01-01

Deep-level transient spectroscopy (DLTS) has been used to study the dominant deep-level H4 produced in InP by electron irradiation. The characteristics of the H4 peak in Zn-doped Inp has been studied as a function of pulse duration (t p ) before and after annealing. The results show that at least two traps contribute to the H4 peak: one is a fast trap (labeled H4 f ) and the other is a show trap (labeled H4 s ). This is show through several results concerning the activation energy, the capture cross section, the full width at half-maximum, and the peak temperature shift. It is shown that both traps are irradiation defects created in P sublattice. (authors)

Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

Science.gov (United States)

Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

2018-01-09

It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

E-beam irradiation effect on CdSe/ZnSe QD formation by MBE: deep level transient spectroscopy and cathodoluminescence studies

International Nuclear Information System (INIS)

Kozlovsky, V I; Litvinov, V G; Sadofyev, Yu G

2004-01-01

CdSe/ZnSe structures containing 1 or 15 thin (3-5 monolayers) CdSe layers were studied by cathodoluminescence (CL) and deep level transient spectroscopy (DLTS). The DLTS spectra consisted of peaks from deep levels (DLs) and an additional intense peak due to electron emission from the ground quantized level in the CdSe layers. Activation energy of this additional peak correlated with an energy of the CdSe-layer emission line in the CL spectra. Electron-beam irradiation of the structure during the growth process was found to influence the DLTS and CL spectra of the CdSe layers, shifting the CdSe-layer emission line to the long-wave side. The obtained results are explained using the assumption that e-beam irradiation stimulates the formation of quantum dots of various sizes in the CdSe layers

Spectroscopy of deep doping levels in Cd0.99Mn0.01Te:Ga

International Nuclear Information System (INIS)

Szatkowski, J.; Placzek-Popko, E.; Sieranski, K.; Bieg, B.

1997-01-01

The investigation results of deep energy levels in Cd 0.99 Mn 0.01 Te (n-type) doped with gallium have been presented. Deep level transient spectroscopy (DLTS) measurements have been carried out in temperature range 80-420 K. The results show five types of electron traps. The activation energy of trapping levels and electron trapping cross-sections have been determined for observed traps. 2 refs, 3 figs, 1 tab

Deep-level transient spectroscopy on an amorphous InGaZnO{sub 4} Schottky diode

Energy Technology Data Exchange (ETDEWEB)

Chasin, Adrian, E-mail: adrian.chasin@imec.be; Bhoolokam, Ajay; Nag, Manoj; Genoe, Jan; Heremans, Paul [imec, Kapeldreef 75, 3001 Leuven (Belgium); ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven (Belgium); Simoen, Eddy [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, 9000 Gent (Belgium); Gielen, Georges [ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven (Belgium)

2014-02-24

The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier electrode and with a molybdenum (Mo) Ohmic contact at the top. The DLTS technique allows to independently measure the energy and spatial distribution of subgap states in the IGZO thin film. The subgap trap concentration has a double exponential distribution as a function energy, with a value of ∼10{sup 19} cm{sup −3} eV{sup −1} at the conduction band edge and a value of ∼10{sup 17} cm{sup −3} eV{sup −1} at an energy of 0.55 eV below the conduction band. Such spectral distribution, however, is not uniform through the semiconductor film. The spatial distribution of subgap states correlates well with the background doping density distribution in the semiconductor, which increases towards the Ohmic Mo contact, suggesting that these two properties share the same physical origin.

Comparison of the nonradiative deep levels in silicon solar cells made of monocrystalline, polycrystalline and amorphous silicon using deep level transient spectroscopy (DLTS)

International Nuclear Information System (INIS)

Hammadeh, H.; Darwich, R.

2005-03-01

The aim of this work is to study the defects in solar cells fabricated from crystalline, polycrystalline and amorphous silicon. Using Deep Level Transient Spectroscopy technique, (DLTS), we have determined their activation energies, concentrations and their effect on the solar cell efficiency. Our results show a DLTS peak in crystalline silicon which we could attribute to tow peaks originating from iron contamination. In the polycrystalline based solar cells we observed a series of non conventional DLTS peaks while in amorphous silicon we observed a peak using low measurement frequencies (between 8 kHz and 20 kHz). We studied these defects and determined their activation energies as well as the capture cross section for one of them. We suggest a possible configuration of these defects. We cannot able to study the effect of these defects on the solar cell efficiency because we have not the experimental set-up which measure the solar cell efficiency. (Authors)

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

OpenAIRE

Al Saqri, Noor alhuda; Felix, Jorlandio F.; Aziz, Mohsin; Kunets, Vasyl P.; Jameel, Dler Adil; Taylor, David; Henini, M.; Abd El-sadek, Mahmmoud S.; Furrow, Colin; Ware, Morgan E.; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory

2016-01-01

InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the ...

Irradiation induced defects containing oxygen atoms in germanium crystal as studied by deep level transient spectroscopy

International Nuclear Information System (INIS)

Fukuoka, Noboru; Kambe, Yoshiyuki; Saito, Haruo; Matsuda, Koji.

1984-05-01

Deep level transient spectroscopy was applied to the electron trapping levels which are associated with the irradiation induced lattice defects in germanium crystals. The germanium crystals used in the study were doped with oxygen, antimony or arsenic and the defects were formed by electron irradiation of 1.5MeV or 10MeV. The nature of so called ''thermal defect'' formed by heat treatment at about 670K was also studied. The trapping levels at Esub(c)-0.13eV, Esub(c)-0.25eV and Esub(c)-0.29eV were found to be associated with defects containing oxygen atoms. From the experimental results the Esub(c)-0.25eV level was attributed to the germanium A-center (interstitial oxygen atom-vacancy pair). Another defect associated with the 715cm -1 infrared absorption band was found to have a trapping level at the same position at Esub(c)-0.25eV. The Esub(c)-0.23eV and Esub(c)-0.1eV levels were revealed to be associated with thermal donors formed by heat treatment at about 670K. Additional two peaks (levels) were observed in the DLTS spectrum. The annealing behavior of the levels suggests that the thermal donors originate from not a single type but several types of defects. (author)

Capacitance transient study of a bistable deep level in e--irradiated n-type 4H-SiC

International Nuclear Information System (INIS)

Beyer, F C; Hemmingsson, C G; Pedersen, H; Henry, A; Janzén, E; Isoya, J; Ohshima, T; Morishita, N

2012-01-01

Using capacitance transient techniques, a bistable centre, called FB centre here, was observed in electron irradiated 4H-SiC. In configuration A, the deep level known as EH5 (E a = E C - 1.07 eV) is detected in the deep level transient spectroscopy spectrum, whereas for configuration B no obvious deep level is observed in the accessible part of the band gap. Isochronal annealing revealed the transition temperatures to be T A→B > 730 K and for the opposite process T B→A ≈ 710 K. The energy needed to conduct the transformations were determined to be E A (A → B) = (2.1 ± 0.1) eV and E A (B → A) = (2.3 ± 0.1) eV, respectively. The pre-factor indicated an atomic jump process for the opposite transition A → B and a charge carrier-emission dominated process in the case of B → A. Minority charge carrier injection enhanced the transformation from configuration B to configuration A by lowering the transition barrier by about 1.4 eV. Since the bistable FB centre is already present after low-energy electron irradiation (200 keV), it is likely related to carbon.

Studies of electron-hole recombination processes at deep levels in GaAs and GaP by means of transient optical absorption spectroscopy

International Nuclear Information System (INIS)

Sugiyama, T.; Ishikawa, Y.; Tanimura, K.; Hayashi, Y.; Itoh, N.

1989-01-01

Studies of recombination processes by means of transient optical absorption (TOA) spectroscopy in GaAs and GaP are reviewed. It is pointed out that the technique can reveal production of excited states having long lifetimes and of non-luminescent metastable states. Two distinct recombination processes in GaAs containing EL2 defects are discussed: one is at the metastable EL2 defects, accompanied with transformation to the EL2 defects and the other is at deep acceptors through pair recombination. (author) 11 refs., 2 figs

Electrical and optical deep level spectroscopy on Os doped p-InP

International Nuclear Information System (INIS)

Parveen, S.; Zafar, N.; Khan, A.; Qureshi, U.S.; Iqbal, M.Z.

1997-01-01

Transition metal (TM) impurities are introduced for obtaining semi insulating (III-V) compound semiconductors used as base material for electronic and optoelectronic devices. TM doping introduces near mid gap levels which are used to compensate shallow level donors and acceptors in (III-V) compound semiconductors. The study of electrical properties of heavier transition metals in InP has been turned to an active field of research owing to their potential to produce thermally stable semi insulating substrate materials. Osmium has been tried for this purpose in our work. InP: Os samples have been grown by low pressure metalorganic chemical vapour deposition (LP-MOCVD). Optical and electrical Deep Level Transient Spectroscopy Techniques have been used to characterise osmium related deep level defects in the p-type samples. Three majority carrier (Hole) emitting levels OsA, OsB, OsC and one minority carrier (electron) emitting level Osl are observed in the DLTS and ODLTS measurements on p-type InP:Os. ON optical injection, only Osl appears and all other majority carrier emitting levels disappear dramatically. Special emphasis is given to the detailed comparison by ODLTS and EDLTS, which yields important information on the relative capture cross-sections of Osmium induced levels in p-InP. (author)

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

International Nuclear Information System (INIS)

Gassoumi, Malek; Mosbahi, Hana; Zaidi, Mohamed Ali; Gaquiere, Christophe; Maaref, Hassen

2013-01-01

Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO 2 passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO 2 film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device

Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures

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Eugenijus Gaubas

2012-12-01

Full Text Available Cu2S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL and the photo-ionization spectroscopy (PIS implemented by the photocurrent probing. Three types of junction structures, separated by using the barrier capacitance characteristics of the junctions and correlated with XRD distinguished precipitates of the polycrystalline layers, exhibit different deep trap spectra within CdS substrates.

Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy.

Science.gov (United States)

Vu, Thi Kim Oanh; Lee, Kyoung Su; Lee, Sang Jun; Kim, Eun Kyu

2018-09-01

We studied defect states in In0.53Ga0.47As/InP heterojunctions with interface control by group V atoms during metalorganic chemical vapor (MOCVD) deposition. From deep level transient spectroscopy (DLTS) measurements, two defects with activation energies of 0.28 eV (E1) and 0.15 eV (E2) below the conduction band edge, were observed. The defect density of E1 for In0.53Ga0.47As/InP heterojunctions with an addition of As and P atoms was about 1.5 times higher than that of the heterojunction added P atom only. From the temperature dependence of current- voltage characteristics, the thermal activation energies of In0.53Ga0.47As/InP of heterojunctions were estimated to be 0.27 and 0.25 eV, respectively. It appeared that the reverse light current for In0.53Ga0.47As/InP heterojunction added P atom increased only by illumination of a 940 nm-LED light source. These results imply that only the P addition at the interface can enhance the quality of InGaAs/InP heterojunction.

A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

Science.gov (United States)

Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

2017-08-01

Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

Impact of proton irradiation on deep level states in n-GaN

International Nuclear Information System (INIS)

Zhang, Z.; Arehart, A. R.; Cinkilic, E.; Ringel, S. A.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Speck, J. S.

2013-01-01

Deep levels in 1.8 MeV proton irradiated n-type GaN were systematically characterized using deep level transient spectroscopies and deep level optical spectroscopies. The impacts of proton irradiation on the introduction and evolution of those deep states were revealed as a function of proton fluences up to 1.1 × 10 13 cm −2 . The proton irradiation introduced two traps with activation energies of E C - 0.13 eV and 0.16 eV, and a monotonic increase in the concentration for most of the pre-existing traps, though the increase rates were different for each trap, suggesting different physical sources and/or configurations for these states. Through lighted capacitance voltage measurements, the deep levels at E C - 1.25 eV, 2.50 eV, and 3.25 eV were identified as being the source of systematic carrier removal in proton-damaged n-GaN as a function of proton fluence

Correlation of a generation-recombination center with a deep level trap in GaN

International Nuclear Information System (INIS)

Nguyen, X. S.; Lin, K.; Zhang, Z.; Arehart, A. R.; Ringel, S. A.; McSkimming, B.; Speck, J. S.; Fitzgerald, E. A.; Chua, S. J.

2015-01-01

We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E c  − 0.26 eV, E c  − 0.59 eV, and E c  − 0.71 eV. The noise spectroscopy identified a generation recombination centre at E c  − 0.65 ± 0.1 eV with a recombination lifetime of 65 μs at 300 K. This level is considered to be the same as the one at E c  − 0.59 eV measured from DLTS, as they have similar trap densities and capture cross section. This result shows that some deep levels contribute to noise generation in GaN materials

Study of silicon-silicon nitride interface properties on planar (1 0 0), planar (1 1 1) and textured surfaces using deep-level transient spectroscopy

International Nuclear Information System (INIS)

Gong, Chun; Simoen, Eddy; Posthuma, Niels E; Van Kerschaver, Emmanuel; Poortmans, Jef; Mertens, Robert

2010-01-01

Deep-level transient spectroscopy (DLTS) has been applied to metal-insulator-semiconductor (MIS) capacitors fabricated on planar (1 0 0), planar (1 1 1) orientations and textured n-type silicon wafers. Low frequency direct plasma-enhanced chemical vapour deposition Si-SiN x interface properties with and without plasma NH 3 pre-treatment, with and without rapid thermal annealing (RTA) have been investigated. It is shown that three different kinds of defect states are identified at the Si-SiN x interface. For the planar (1 0 0) surface, samples with plasma NH 3 pre-treatment plus RTA show the lowest DLTS signals, which suggests the lowest overall interface states density. For planar (1 1 1) Si surfaces, plasma NH 3 pre-treatment and RTA yield a small improvement. With the textured surface, the RTA step improves the surface passivation quality further but no obvious impact is found with plasma NH 3 pre-treatment. Energy-dependent electron capture cross sections were also measured by small-pulse DLTS. The capture cross sections depend strongly on the energy level and decrease towards the conduction band edge.

Spectroscopy of deep doping levels in Cd{sub 0.99}Mn{sub 0.01}Te:Ga; Spektroskopia glebokich poziomow domieszkowych w Cd{sub 0.99}Mn{sub 0.01}Te:Ga

Energy Technology Data Exchange (ETDEWEB)

Szatkowski, J.; Placzek-Popko, E.; Sieranski, K. [Politechnika Wroclawska, Wroclaw (Poland); Bieg, B. [Wyzsza Szkola Morska, Szczecin (Poland)

1997-12-01

The investigation results of deep energy levels in Cd{sub 0.99}Mn{sub 0.01}Te (n-type) doped with gallium have been presented. Deep level transient spectroscopy (DLTS) measurements have been carried out in temperature range 80-420 K. The results show five types of electron traps. The activation energy of trapping levels and electron trapping cross-sections have been determined for observed traps. 2 refs, 3 figs, 1 tab.

Characterization of deep level defects in Tl6I4S single crystals by photo-induced current transient spectroscopy

International Nuclear Information System (INIS)

Peters, J A; Liu, Z; Sebastian, M; Wessels, B W; Im, J; Freeman, A J; Nguyen, S; Kanatzidis, M G

2015-01-01

Defect levels in semi-insulating Tl 6 I 4 S single crystals grown by the horizontal Bridgman technique have been characterized using photo-induced current transient spectroscopy (PICTS). These measurements revealed six electron traps located at (0.059  ±  0.007), (0.13  ±  0.012), (0.31  ±  0.074), (0.39  ±  0.019), (0.62  ±  0.110), and (0.597  ±  0.105). These defect levels are attributed to vacancies (V I , V S ) and antisite defects (I S , Tl S , Tl I ) upon comparison to calculations of native defect energy levels using density functional theory and defects recently reported from photoluminescence and photoconductivity measurements. (paper)

Deep-level optical spectroscopy investigation of N-doped TiO2 films

International Nuclear Information System (INIS)

Nakano, Yoshitaka; Morikawa, Takeshi; Ohwaki, Takeshi; Taga, Yasunori

2005-01-01

N-doped TiO 2 films were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 deg. C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined from x-ray photoelectron spectroscopy measurements. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at ∼1.18 and ∼2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. Additionally, the 2.48 eV band is newly introduced by the N doping and contributes to band-gap narrowing by mixing with the O 2p valence band

Deep level transient spectroscopy studies of charge traps introduced into silicon by channeling ion implantation of phosphorus

International Nuclear Information System (INIS)

McCallum, J.C.; Lay, M.; Deenapanray, P.N.K.; Jagadish, C.

2002-01-01

Full text: The operating conditions of a silicon-based quantum computer are expected to place stringent requirements on the quality of the material and the processes used to make it. In the Special Research Centre for Quantum Computer Technology, ion implantation is one of the principle processing techniques under investigation for forming an ordered array of phosphorus atoms. This technique introduces defect centres in silicon which act as charge traps. Charge traps are expected to be detrimental to operation of the device. These defect centres, their dependence on ion implantation and thermal annealing conditions are being quantified using Deep Level Transient Spectroscopy (DLTS). Since the aspect ratio of the masks required for the top-down fabrication process restrict the incident ions to a range of angles in which they may undergo channeling implantation in the silicon substrate, we have examined the effect of channeling implantation on the nature and quantity of the charge traps produced. This is the first time that DLTS studies have been performed for channeling implantation of a dopant species in silicon. DLTS is well-suited to the dose regime of ∼10 11 P/cm 3 required for the quantum computer, however, a standard DLTS measurement is unable to probe the shallow depth range of ∼ 20 nm required for the P atoms (∼ 10-15 keV implantation energy). Our aim has therefore been to perform P implants in the appropriate dose regime but using higher implantation energies, ∼ 75-450 keV, where DLTS can directly identify and profile the charge traps induced by the implantation step and monitor their annealing characteristics during subsequent processing. To map the behaviour observed in this energy regime onto the low energy range required for the quantum computer we are comparing the DLTS results to damage profiles predicted by the Monte Carlo code Crystal Trim which is used in the semiconductor industry to simulate ion implantation processes in crystalline

Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

International Nuclear Information System (INIS)

Armstrong, A.; Arehart, A.R.; Green, D.; Mishra, U.K.; Speck, J.S.; Ringel, S.A.

2005-01-01

The impact of C incorporation on the deep level spectrum of n-type and semi-insulating GaN:C:Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was investigated by the combination of deep level transient spectroscopy, steady-state photocapacitance, and transient deep level optical spectroscopy. The deep level spectra of the GaN:C:Si samples exhibited several band-gap states. A monotonic relation between systematic doping with C and quantitative trap concentration revealed C-related deep levels. A deep acceptor at E c -2.05 eV and a deep donor at E c -0.11 eV are newly reported states, and the latter is the first directly observed deep level attributed to the C Ga defect. A configuration-coordinate model involving localized lattice distortion revealed strong evidence that C-related deep levels at E c -3.0 eV and E ν +0.9 eV are likely identical and associated with the yellow luminescence in C-doped GaN films. Of the deep levels whose trap concentration increase with C doping, the band-gap states at E c -3.0 and 3.28 eV had the largest concentration, implying that free-carrier compensation by these deep levels is responsible for the semi-insulating behavior of GaN:C:Si films grown by MBE. The differing manner by which C incorporation in GaN may impact electrical conductivity in films grown by MBE and metal-organic chemical-vapor deposition is discussed

Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

Science.gov (United States)

Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

2018-04-01

For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

Hole traps in n-GaN detected by minority carrier transient spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Tokuda, Yutaka; Yamada, Yujiro; Shibata, Tatsunari; Yamaguchi, Shintaro [Department of Electrical and Electronics Engineering, Aichi Institute of Technology, Yakusa, 470-0392 Toyota (Japan); Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu [Toyota Central R and D Laboratories, Inc., Nagakute, 480-1192 Aichi (Japan)

2011-07-15

Minority carrier transient spectroscopy (MCTS) has been applied for the detection of hole traps in n-GaN using Schottky diodes. MCTS using 355 nm light emitting diodes is performed under isothermal conditions in the temperature range 280 to 330 K for n-GaN grown by metalorganic chemical vapor deposition on sapphire. Isothermal MCTS spectra reveal the E{sub v} + 0.86 eV hole trap with the trap concentration of 1.1x10{sup 16} cm{sup -3}. The E{sub v} + 0.86 eV hole trap has the higher concentration as compared to electron traps observed by deep level transient spectroscopy. Thus, the isothermal MCTS around room temperature provides a convenient way to evaluate the dominant trap in n-GaN. It is suggested that the E{sub v} + 0.86 eV hole trap is associated with the V{sub Ga}-related defect or carbon-related defect. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Deep levels in silicon–oxygen superlattices

International Nuclear Information System (INIS)

Simoen, E; Jayachandran, S; Delabie, A; Caymax, M; Heyns, M

2016-01-01

This work reports on the deep levels observed in Pt/Al 2 O 3 /p-type Si metal-oxide-semiconductor capacitors containing a silicon–oxygen superlattice (SL) by deep-level transient spectroscopy. It is shown that the presence of the SL gives rise to a broad band of hole traps occurring around the silicon mid gap, which is absent in reference samples with a silicon epitaxial layer. In addition, the density of states of the deep layers roughly scales with the number of SL periods for the as-deposited samples. Annealing in a forming gas atmosphere reduces the maximum concentration significantly, while the peak energy position shifts from close-to mid-gap towards the valence band edge. Based on the flat-band voltage shift of the Capacitance–Voltage characteristics it is inferred that positive charge is introduced by the oxygen atomic layers in the SL, indicating the donor nature of the underlying hole traps. In some cases, a minor peak associated with P b dangling bond centers at the Si/SiO 2 interface has been observed as well. (paper)

Studies of deep levels in He+-irradiated silicon

International Nuclear Information System (INIS)

Schmidt, D.C.; Barbot, J.F.; Blanchard, C.

1997-01-01

Deep levels created in n-epitaxial silicon by alpha particle irradiation in the dose range from 10 9 to 10 13 particles/cm 2 have been investigated by the deep level transient spectroscopy technique and capacitance-voltage profiling. Under low fluence irradiation at least four main electron traps have been observed. With further increase in irradiation fluence, two new levels located at E c -0.56 eV and E c -0.64 eV appear on the high-temperature side of the DLTS signal. The slope change observed in the amplitude variations of the singly negative charge state of the divacancy versus the dose takes place when these two new levels appear. This suggests that both are multivacancy-related defects. After annealing at 350 C for 15 min, all electron traps have disappeared. Moreover, no shallow levels are created during the annealing. (orig.)

Investigation of deep levels in GaInNAs

International Nuclear Information System (INIS)

Abulfotuh, F.; Balcioglu, A.; Friedman, D.; Geisz, J.; Kurtz, S.

1999-01-01

This paper presents and discusses the first Deep-Level transient spectroscopy (DLTS) data obtained from measurements carried out on both Schottky barriers and homojunction devices of GaInNAs. The effect of N and In doping on the electrical properties of the GaNInAs devices, which results in structural defects and interface states, has been investigated. Moreover, the location and densities of deep levels related to the presence of N, In, and N+In are identified and correlated with the device performance. The data confirmed that the presence of N alone creates a high density of shallow hole traps related to the N atom and structural defects in the device. Doping by In, if present alone, also creates low-density deep traps (related to the In atom and structural defects) and extremely deep interface states. On the other hand, the co-presence of In and N eliminates both the interface states and levels related to structural defects. However, the device still has a high density of the shallow and deep traps that are responsible for the photocurrent loss in the GaNInAs device, together with the possible short diffusion length. copyright 1999 American Institute of Physics

Investigation of Deep Levels in GaInNas

International Nuclear Information System (INIS)

Balcioglu, A.; Friedman, D.; Abulfotuh, F.; Geisz, J.; Kurtz, S.

1998-01-01

This paper presents and discusses the first Deep-Level transient spectroscopy (DLTS) data obtained from measurements carried out on both Schottky barriers and homojunction devices of GaInNAs. The effect of N and In doping on the electrical properties of the GaNInAs devices, which results in structural defects and interface states, has been investigated. Moreover, the location and densities of deep levels related to the presence of N, In, and N+In are identified and correlated with the device performance. The data confirmed that the presence of N alone creates a high density of shallow hole traps related to the N atom and structural defects in the device. Doping by In, if present alone, also creates low-density deep traps (related to the In atom and structural defects) and extremely deep interface states. On the other hand, the co-presence of In and N eliminates both the interface states and levels related to structural defects. However, the device still has a high density of the shallow and deep traps that are responsible for the photocurrent loss in the GaNInAs device, together with the possible short diffusion length

Studies on deep electronic levels in silicon and aluminium gallium arsenide alloys

International Nuclear Information System (INIS)

Pettersson, H.

1993-01-01

This thesis reports on investigations of the electrical and optical properties of deep impurity centers, related to the transition metals (TMs) Ti, Mo, W, V and Ni, in silicon. Emission rates, capture cross sections and photoionization cross sections for these impurities were determined by means of various Junction Space Charge Techniques (JSCTs), such as Deep Level Transient Spectroscopy (DLTS), dark capacitance transient and photo capacitance transient techniques. Changes in Gibbs free energy as a function of temperature were calculated for all levels. From this temperature dependence, the changes in enthalpy and entropy involved in the electron and hole transitions were deduced. The influence of high electric fields on the electronic levels in chalcogen-doped silicon were investigated using the dark capacitance transient technique. The enhancement of the electron emission from the deep centers indicated a more complex field enhancement model than the expected Poole-Frenkel effect for coulombic potentials. The possibility to determine charge states of defects using the Poole-Frenkel effect, as often suggested, is therefore questioned. The observation of a persistent decrease of the dark conductivity due to illumination in simplified AlGaAs/GaAs high Electron Mobility Transistors (HEMTs) over the temperature range 170K< T<300K is reported. A model for this peculiar behavior, based on the recombination of electrons in the two-dimensional electron gas (2DEG) located at the AlGaAs/GaAs interface with holes generated by a two-step excitation process via the deep EL2 center in the GaAs epilayer, is put forward

Spectroscopy and reactions of vibrationally excited transient molecules

Energy Technology Data Exchange (ETDEWEB)

Dai, H.L. [Univ. of Pennsylvania, Philadelphia (United States)

1993-12-01

Spectroscopy, energy transfer and reactions of vibrationally excited transient molecules are studied through a combination of laser-based excitation techniques and efficient detection of emission from the energized molecules with frequency and time resolution. Specifically, a Time-resolved Fourier Transform Emission Spectroscopy technique has been developed for detecting dispersed laser-induced fluorescence in the IR, visible and UV regions. The structure and spectroscopy of the excited vibrational levels in the electronic ground state, as well as energy relaxation and reactions induced by specific vibronic excitations of a transient molecule can be characterized from time-resolved dispersed fluorescence in the visible and UV region. IR emissions from highly vibrational excited levels, on the other hand, reveal the pathways and rates of collision induced vibrational energy transfer.

Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

International Nuclear Information System (INIS)

Armstrong, A.; Caudill, J.; Ringel, S. A.; Corrion, A.; Poblenz, C.; Mishra, U. K.; Speck, J. S.

2008-01-01

Deep level defects in p-type GaN:Mg grown by molecular beam epitaxy were characterized using steady-state photocapacitance and deep level optical spectroscopy (DLOS). Low frequency capacitance measurements were used to alleviate dispersion effects stemming from the deep Mg acceptor. Use of DLOS enabled a quantitative survey of both deep acceptor and deep donor levels, the latter being particularly important due to the limited understanding of minority carrier states for p-type GaN. Simultaneous electron and hole photoemissions resulted in a convoluted deep level spectrum that was decoupled by emphasizing either majority or minority carrier optical emission through control of the thermal filling time conditions. In this manner, DLOS was able to resolve and quantify the properties of deep levels residing near both the conduction and valence bandedges in the same sample. Bandgap states through hole photoemission were observed at E v +3.05 eV, E v +3.22 eV and E v +3.26 eV. Additionally, DLOS revealed levels at E c -3.24 eV and E c -2.97 eV through electron emission to the conduction band with the former attributed to the Mg acceptor itself. The detected deep donor concentration is less than 2% of activated [Mg] and demonstrates the excellent quality of the film

I–V, C–V and deep level transient spectroscopy study of 24 MeV ...

Indian Academy of Sciences (India)

This paper describes the effect of 24 MeV proton irradiation on the electrical characteristics of a pnp bipolar junction transistor 2N 2905A. –, – and DLTS measurements are carried out to characterize the transistor before and after irradiation. The properties of deep level defects observed in the bulk of the transistor are ...

Large lattice relaxation deep levels in neutron-irradiated GaN

International Nuclear Information System (INIS)

Li, S.; Zhang, J.D.; Beling, C.D.; Wang, K.; Wang, R.X.; Gong, M.; Sarkar, C.K.

2005-01-01

Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) measurements have been carried out in neutron-irradiated n-type hydride-vapor-phase-epitaxy-grown GaN. A defect center characterized by a DLTS line, labeled as N1, is observed at E C -E T =0.17 eV. Another line, labeled as N2, at E C -E T =0.23 eV, seems to be induced at the same rate as N1 under irradiation and may be identified with E1. Other defects native to wurtzite GaN such as the C and E2 lines appear to enhance under neutron irradiation. The DLOS results show that the defects N1 and N2 have large Frank-Condon shifts of 0.64 and 0.67 eV, respectively, and hence large lattice relaxations. The as-grown and neutron-irradiated samples all exhibit the persistent photoconductivity effect commonly seen in GaN that may be attributed to DX centers. The concentration of the DX centers increases significantly with neutron dosage and is helpful in sustaining sample conductivity at low temperatures, thus making possible DLTS measurements on N1 an N2 in the radiation-induced deep-donor defect compensated material which otherwise are prevented by carrier freeze-out

Radiation induced deep level defects in bipolar junction transistors under various bias conditions

International Nuclear Information System (INIS)

Liu, Chaoming; Yang, Jianqun; Li, Xingji; Ma, Guoliang; Xiao, Liyi; Bollmann, Joachim

2015-01-01

Bipolar junction transistor (BJT) is sensitive to ionization and displacement radiation effects in space. In this paper, 35 MeV Si ions were used as irradiation source to research the radiation damage on NPN and PNP bipolar transistors. The changing of electrical parameters of transistors was in situ measured with increasing irradiation fluence of 35 MeV Si ions. Using deep level transient spectroscopy (DLTS), defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions can affect the concentration of deep level defects, and the radiation damage induced by heavy ions.

Iron and intrinsic deep level states in Ga2O3

Science.gov (United States)

Ingebrigtsen, M. E.; Varley, J. B.; Kuznetsov, A. Yu.; Svensson, B. G.; Alfieri, G.; Mihaila, A.; Badstübner, U.; Vines, L.

2018-01-01

Using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga2O3. First, our results indicate that FeGa, and not an intrinsic defect, acts as the deep acceptor responsible for the often dominating E2 level at ˜0.78 eV below the conduction band minimum. Second, by provoking additional intrinsic defect generation via proton irradiation, we identified the emergence of a new level, labeled as E2*, having the ionization energy very close to that of E2, but exhibiting an order of magnitude larger capture cross section. Importantly, the properties of E2* are found to be consistent with its intrinsic origin. As such, contradictory opinions of a long standing literature debate on either extrinsic or intrinsic origin of the deep acceptor in question converge accounting for possible contributions from E2 and E2* in different experimental conditions.

Localized deep levels in AlxGa1−xN epitaxial films with various Al compositions

International Nuclear Information System (INIS)

Shi Li-Yang; Shen Bo; Wang Ping; Yan Jian-Chang; Wang Jun-Xi

2014-01-01

By using high-temperature deep-level transient spectroscopy (HT-DLTS) and other electrical measurement techniques, localized deep levels in n-type Al x Ga 1−x N epitaxial films with various Al compositions (x = 0, 0.14, 0.24, 0.33, and 0.43) have been investigated. It is found that there are three distinct deep levels in Al x Ga 1−x N films, whose level position with respect to the conduction band increases as Al composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in Al x Ga 1−x N films. (condensed matter: structural, mechanical, and thermal properties)

Transient Infrared Emission Spectroscopy

Science.gov (United States)

Jones, Roger W.; McClelland, John F.

1989-12-01

Transient Infrared Emission Spectroscopy (TIRES) is a new technique that reduces the occurrence of self-absorption in optically thick solid samples so that analytically useful emission spectra may be observed. Conventional emission spectroscopy, in which the sample is held at an elevated, uniform temperature, is practical only for optically thin samples. In thick samples the emission from deep layers of the material is partially absorbed by overlying layers.1 This self-absorption results in emission spectra from most optically thick samples that closely resemble black-body spectra. The characteristic discrete emission bands are severely truncated and altered in shape. TIRES bypasses this difficulty by using a laser to heat only an optically thin surface layer. The increased temperature of the layer is transient since the layer will rapidly cool and thicken by thermal diffusion; hence the emission collection must be correlated with the laser heating. TIRES may be done with both pulsed and cw lasers.2,3 When a pulsed laser is used, the spectrometer sampling must be synchronized with the laser pulsing so that only emission during and immediately after each laser pulse is observed.3 If a cw laser is used, the sample must move rapidly through the beam. The hot, transient layer is then in the beam track on the sample at and immediately behind the beam position, so the spectrometer field of view must be limited to this region near the beam position.2 How much self-absorption the observed emission suffers depends on how thick the heated layer has grown by thermal diffusion when the spectrometer samples the emission. Use of a pulsed laser synchronized with the spectrometer sampling readily permits reduction of the time available for heat diffusion to about 100 acs .3 When a cw laser is used, the heat-diffusion time is controlled by how small the spectrometer field of view is and by how rapidly the sample moves past within this field. Both a very small field of view and a

Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation

International Nuclear Information System (INIS)

Benzohra, Mohamed; Olivie, Francois; Idrissi-Benzohra, Malika; Ketata, Kaouther; Ketata, Mohamed

2002-01-01

It is well established that low energy B + ion implantation into Ge- (or Si) implantation pre-amorphised silicon allows ultra-shallow p + n junctions formation. However, this process is known to generate defects such as dislocation loops, vacancies and interstitials which can act as vehicles to different mechanisms inducing electrically active levels into the silicon bulk. The junctions studied have been obtained using 3 keV/10 15 cm -2 B + implantation into Ge-implantation pre-amorphised substrates and into a reference crystalline substrate. Accurate measurements using deep level transient spectroscopy (DLTS) and isothermal transient capacitance ΔC(t,T) were performed to characterise these levels. Such knowledge is crucial to improve the device characteristics. In order to sweep the silicon band gap, various experimental conditions were considered. The analysis of DLTS spectra have first showed three deep levels associated to secondary induced defects. Their concentration profiles were derived from isothermal transient capacitance at depths up to 3.5 μm into the silicon bulk and allowed us to detect a new deep level. The evolution of such defect distribution in correlation with the technological steps is discussed. The end of range (EOR) defect influence on electrical activity of secondary induced defects in ultra-shallow p + n diodes is clearly demonstrated

Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

Science.gov (United States)

Dhar, S.; Das, U.; Bhattacharya, P. K.

1986-01-01

Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

Positron beam studies of transients in semiconductors

International Nuclear Information System (INIS)

Beling, C.D.; Ling, C.C.; Cheung, C.K.; Naik, P.S.; Zhang, J.D.; Fung, S.

2006-01-01

Vacancy-sensing positron deep level transient spectroscopy (PDLTS) is a positron beam-based technique that seeks to provide information on the electronic ionization levels of vacancy defects probed by the positron through the monitoring of thermal transients. The experimental discoveries leading to the concept of vacancy-sensing PDLTS are first reviewed. The major problem associated with this technique is discussed, namely the strong electric fields establish in the near surface region of the sample during the thermal transient which tend to sweep positrons into the contact with negligible defect trapping. New simulations are presented which suggest that under certain conditions a sufficient fraction of positrons may be trapped into ionizing defects rendering PDLTS technique workable. Some suggestions are made for techniques that might avoid the problematic electric field problem, such as optical-PDLTS where deep levels are populated using light and the use of high forward bias currents for trap filling

The role of deep level traps in barrier height of 4H-SiC Schottky diode

Energy Technology Data Exchange (ETDEWEB)

Zaremba, G., E-mail: gzaremba@ite.waw.pl [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Adamus, Z. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Jung, W.; Kaminska, E.; Borysiewicz, M.A.; Korwin-Mikke, K. [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

2012-09-01

This paper presents a discussion about the influence of deep level defects on the height of Ni-Si based Schottky barriers to 4H-SiC. The defects were characterized by deep level transient spectroscopy (DLTS) in a wide range of temperatures (78-750 K). The numerical simulation of barrier height value as a function of dominant defect concentration was carried out to estimate concentration, necessary to 'pin' Fermi level and thus significantly influence the barrier height. From comparison of the results of simulation with barrier height values obtained by capacitance-voltage (C-V) measurements it seems that dominant defect in measured concentration has a very small impact on the barrier height and on the increase of reverse current.

Deep levels in p-type InGaAsN lattice matched to GaAs

International Nuclear Information System (INIS)

Kwon, D.; Kaplar, R.J.; Ringel, S.A.; Allerman, A.A.; Kurtz, S.R.; Jones, E.D.

1999-01-01

Deep-level transient spectroscopy measurements were utilized to investigate deep-level defects in metal - organic chemical vapor deposition-grown, unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the band gap, with a dominant hole trap at E v +0.10eV. Postgrowth annealing simplified the deep-level spectra, enabling the identification of three distinct hole traps at 0.10, 0.23, and 0.48 eV above the valence-band edge, with concentrations of 3.5x10 14 , 3.8x10 14 , and 8.2x10 14 cm -3 , respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4x10 14 cm -3 in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority-carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future. copyright 1999 American Institute of Physics

A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps

Science.gov (United States)

Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu

2018-04-01

In this study, GaN MOS capacitance-voltage device simulations considering various interface and bulk traps are performed in the transient mode. The simulations explain various features of capacitance-voltage curves, such as plateau, hysteresis, and frequency dispersions, which are commonly observed in measurements of GaN MOS capacitors and arise from complicated combinations of interface and bulk deep-level traps. The objective of the present study is to provide a good theoretical tool to understand the physics of various nonideal measured curves.

Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

Energy Technology Data Exchange (ETDEWEB)

Pousset, J.; Farella, I.; Cola, A., E-mail: adriano.cola@le.imm.cnr.it [Institute for Microelectronics and Microsystems—Unit of Lecce, National Council of Research (IMM/CNR), Lecce I-73100 (Italy); Gambino, S. [Dipartimento di Matematica e Fisica “Ennio De Giorgi,” Università del Salento, Lecce I-73100 (Italy); CNR NANOTEC—Istituto di Nanotecnologia, Polo di Nanotecnologia c/o Campus Ecotekne, via Monteroni, 73100 Lecce (Italy)

2016-03-14

We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

International Nuclear Information System (INIS)

Pousset, J.; Farella, I.; Cola, A.; Gambino, S.

2016-01-01

We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se{sub 2} based thin films

Energy Technology Data Exchange (ETDEWEB)

Lee, D.W.; Seol, M.S.; Kwak, D.W.; Oh, J.S. [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of); Jeong, J.H. [Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of)

2012-08-01

Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se{sub 2} (CIGS) based thin films for solar cell were investigated. CIGS films with a thickness of 3 {mu}m were grown on a soda-lime glass substrate by a co-evaporation method, and then were implanted with protons. To study deep level defects in the proton implanted CIGS films, deep level transient spectroscopy measurements on the CIGS-based solar cells were carried out, these measurements found 6 traps (including 3 hole traps and 3 electron traps). In the proton implanted CIGS films, the deep level defects, which are attributed to the recombination centers of the CIGS solar cell, were significantly reduced in intensity, while a deep level defect was generated around 0.28 eV above the valence band maximum. Therefore, we suggest that most deep level defects in CIGS films can be controlled by hydrogen effects. - Highlights: Black-Right-Pointing-Pointer Proton implanted Cu(In,Ga)Se{sub 2} thin film and solar cell are prepared. Black-Right-Pointing-Pointer Deep level defects of Cu(In,Ga)Se{sub 2} thin film and solar cell are investigated. Black-Right-Pointing-Pointer Hydrogenation using proton implantation and H{sub 2} annealing reduces deep level defects. Black-Right-Pointing-Pointer Hydrogenation could enhance electrical properties and efficiency of solar cells.

Identification of deep levels in GaN associated with dislocations

International Nuclear Information System (INIS)

Soh, C B; Chua, S J; Lim, H F; Chi, D Z; Liu, W; Tripathy, S

2004-01-01

To establish a correlation between dislocations and deep levels in GaN, a deep-level transient spectroscopy study has been carried out on GaN samples grown by metalorganic chemical vapour deposition. In addition to typical undoped and Si-doped GaN samples, high-quality crack-free undoped GaN film grown intentionally on heavily doped cracked Si-doped GaN and cracked AlGaN templates are also chosen for this study. The purpose of growth of such continuous GaN layers on top of the cracked templates is to reduce the screw dislocation density by an order of magnitude. Deep levels in these layers have been characterized and compared with emphasis on their thermal stabilities and capture kinetics. Three electron traps at E c -E T ∼0.10-0.11, 0.24-0.27 and 0.59-0.63 eV are detected common to all the samples while additional levels at E c -E T ∼0.18 and 0.37-0.40 eV are also observed in the Si-doped GaN. The trap levels exhibit considerably different stabilities under rapid thermal annealing. Based on the observations, the trap levels at E c -E T ∼0.18 and 0.24-0.27 eV can be associated with screw dislocations, whereas the level at E c -E T ∼0.59-0.63 eV can be associated with edge dislocations. This is also in agreement with the transmission electron microscopy measurements conducted on the GaN samples

Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors

Science.gov (United States)

Wang, Chong; Simoen, Eddy; Zhao, Ming; Li, Wei

2017-10-01

Deep levels formed under different growth conditions of a 200 nm AlN buffer layer on B-doped Czochralski Si(111) substrates with different resistivity were investigated by deep-level transient spectroscopy (DLTS) on metal-insulator-semiconductor capacitors. Growth-temperature-dependent Al diffusion in the Si substrate was derived from the free carrier density obtained by capacitance-voltage measurement on samples grown on p- substrates. The DLTS spectra revealed a high concentration of point and extended defects in the p- and p+ silicon substrates, respectively. This indicated a difference in the electrically active defects in the silicon substrate close to the AlN/Si interface, depending on the B doping concentration.

Dual-wavelength photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity

Science.gov (United States)

Musiienko, A.; Grill, R.; Moravec, P.; Korcsmáros, G.; Rejhon, M.; Pekárek, J.; Elhadidy, H.; Šedivý, L.; Vasylchenko, I.

2018-04-01

Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobility was chosen for the detailed study involving measurements at both the steady and dynamic regimes. We revealed that the Hall mobility and photoconductivity can be both enhanced and suppressed by an additional illumination at certain photon energies. The anomalous mobility decrease was explained by an excitation of the inhomogeneously distributed deep level at the energy Ev + 1.0 eV, thus enhancing potential non-uniformities. The appearance of negative differential photoconductivity was interpreted by an intensified electron occupancy of that level by a direct valence band-to-level excitation. Modified Shockley-Read-Hall theory was used for fitting experimental results by a model comprising five deep levels. Properties of the deep levels and their impact on the device performance were deduced.

Deep-HiTS: Rotation Invariant Convolutional Neural Network for Transient Detection

Science.gov (United States)

Cabrera-Vives, Guillermo; Reyes, Ignacio; Förster, Francisco; Estévez, Pablo A.; Maureira, Juan-Carlos

2017-02-01

We introduce Deep-HiTS, a rotation-invariant convolutional neural network (CNN) model for classifying images of transient candidates into artifacts or real sources for the High cadence Transient Survey (HiTS). CNNs have the advantage of learning the features automatically from the data while achieving high performance. We compare our CNN model against a feature engineering approach using random forests (RFs). We show that our CNN significantly outperforms the RF model, reducing the error by almost half. Furthermore, for a fixed number of approximately 2000 allowed false transient candidates per night, we are able to reduce the misclassified real transients by approximately one-fifth. To the best of our knowledge, this is the first time CNNs have been used to detect astronomical transient events. Our approach will be very useful when processing images from next generation instruments such as the Large Synoptic Survey Telescope. We have made all our code and data available to the community for the sake of allowing further developments and comparisons at https://github.com/guille-c/Deep-HiTS. Deep-HiTS is licensed under the terms of the GNU General Public License v3.0.

Deep knowledge expert system for diagnosis of multiple-failure severe transients in nuclear power plant

International Nuclear Information System (INIS)

Martin, R.P.; Nassersharif, B.

1987-01-01

TAMUS (Transient Analysis of MUltiple-failure Simulations) is a prototype expert system which is the result of a project investigating and implementing event confidence-levels (used by reactor safety experts in reactor transient analysis) in the form of an expert system. Currently, TAMUS is designed to diagnose reactor transients by analyzing simulated sensor and plant thermal hydraulic information from a system simulation. TAMUS uses a knowledge base of existing emergency nuclear plant operating guidelines and detailed thermal-hydraulic calculating results correlated to confidence-levels. TAMUS can diagnose a number of reactor transients (for example, loss-of-coolant accidents, steam-generator-tube ruptures, loss-of-offsite power, etc.). Future work includes the expansion of the knowledge base and improvement of the deep-knowledge qualitative models

Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E2

International Nuclear Information System (INIS)

Chen, X.D.; Fung, S.; Beling, C.D.; Lui, M.K.; Ling, C.C.; Yang, C.L.; Ge, W.K.; Wang, J.N.; Gong, M.

2004-01-01

N-type 6H-SiC samples irradiated with electrons having energies of E e =0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E e ≥0.3 MeV, deep levels ED1, E 1 /E 2 , and E i appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E 1 /E 2 , as well as ED1 and E i , involves the displacement of the C atom in the SiC lattice

Capacitance spectroscopy on n-type GaNAs/GaAs embedded quantum structure solar cells

Science.gov (United States)

Venter, Danielle; Bollmann, Joachim; Elborg, Martin; Botha, J. R.; Venter, André

2018-04-01

In this study, both deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS) have been used to study the properties of electrically active deep level centers present in GaNAs/GaAs quantum wells (QWs) embedded in p-i-n solar cells. The structures were grown by molecular beam epitaxy (MBE). In particular, the electrical properties of samples with Si (n-type) doping of the QWs were investigated. DLTS revealed four deep level centers in the material, whereas only three were detected by AS. NextNano++ simulation software was used to model the sample band-diagrams to provide reasoning for the origin of the signals produced by both techniques.

The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC

Science.gov (United States)

Alfieri, G.; Knoll, L.; Kranz, L.; Sundaramoorthy, V.

2018-05-01

High-purity semi-insulating 4H-SiC can find a variety of applications, ranging from power electronics to quantum computing applications. However, data on the electronic properties of deep levels in this material are scarce. For this reason, we present a deep level transient spectroscopy study on HPSI 4H-SiC substrates, both as-grown and irradiated with low-energy electrons (to displace only C-atoms). Our investigation reveals the presence of four deep levels with activation energies in the 0.4-0.9 eV range. The concentrations of three of these levels increase by at least one order of magnitude after irradiation. Furthermore, we analyzed the behavior of these traps under sub- and above-band gap illumination. The nature of the traps is discussed in the light of the present data and results reported in the literature.

Attosecond transient absorption spectroscopy of molecular hydrogen

International Nuclear Information System (INIS)

Martín, Fernando; González-Castrillo, Alberto; Palacios, Alicia; Argenti, Luca; Cheng, Yan; Chini, Michael; Wang, Xiaowei; Chang, Zenghu

2015-01-01

We extend attosecond transient absorption spectroscopy (ATAS) to the study of hydrogen molecules, demonstrating the potential of the technique to resolve – simultaneously and with state resolution – both the electronic and nuclear dynamics. (paper)

Inductively coupled plasma induced deep levels in epitaxial n-GaAs

Energy Technology Data Exchange (ETDEWEB)

Auret, F.D.; Janse van Rensburg, P.J.; Meyer, W.E.; Coelho, S.M.M. [Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa); Kolkovsky, Vl. [Technische Universitaet, Dresden, 01062 Dresden (Germany); Botha, J.R.; Nyamhere, C. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Venter, A., E-mail: andre.venter@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

2012-05-15

The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent electron traps (E{sub c}-0.046 eV, E{sub c}-0.186 eV, E{sub c}-0.314 eV. E{sub c}-0.528 eV and E{sub c}-0.605 eV) were detected. The metastable defect E{sub c}-0.046 eV having a trap signature similar to E1 is observed for the first time. E{sub c}-0.314 eV and E{sub c}-0.605 eV are metastable and appear to be similar to the M3 and M4 defects present in dc H-plasma exposed GaAs.

Inductively coupled plasma induced deep levels in epitaxial n-GaAs

International Nuclear Information System (INIS)

Auret, F.D.; Janse van Rensburg, P.J.; Meyer, W.E.; Coelho, S.M.M.; Kolkovsky, Vl.; Botha, J.R.; Nyamhere, C.; Venter, A.

2012-01-01

The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent electron traps (E c —0.046 eV, E c —0.186 eV, E c —0.314 eV. E c —0.528 eV and E c —0.605 eV) were detected. The metastable defect E c —0.046 eV having a trap signature similar to E1 is observed for the first time. E c —0.314 eV and E c —0.605 eV are metastable and appear to be similar to the M3 and M4 defects present in dc H-plasma exposed GaAs.

Behavior of deep level defects on voltage-induced stress of Cu(In,Ga)Se{sub 2} solar cells

Energy Technology Data Exchange (ETDEWEB)

Lee, D.W.; Cho, S.E. [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of); Jeong, J.H. [Solar Cell Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of)

2015-05-01

The behavior of deep level defects by a voltage-induced stress for CuInGaSe{sub 2} (CIGS) solar cells has been investigated. CIGS solar cells were used with standard structures which are Al-doped ZnO/i-ZnO/CdS/CIGSe{sub 2}/Mo on soda lime glass, and that resulted in conversion efficiencies as high as 16%. The samples with the same structure were isothermally stressed at 100 °C under the reverse voltages. The voltage-induced stressing in CIGS samples causes a decrease in the carrier density and conversion efficiency. To investigate the behavior of deep level defects in the stressed CIGS cells, photo-induced current transient spectroscopy was utilized, and normally 3 deep level defects (including 2 hole traps and 1 electron trap) were found to be located at 0.18 eV and 0.29 eV above the valence band maximum (and 0.36 eV below the conduction band). In voltage-induced cells, especially, it was found that the decrease of the hole carrier density could be responsible for the increase of the 0.29 eV defect, which is known to be observed in less efficient CIGS solar cells. And the carrier density and the defects are reversible at least to a large extent by resting at room-temperature without the bias voltage. From optical capture kinetics in photo-induced current transient spectroscopy measurement, the types of defects could be distinguished into the isolated point defect and the extended defect. In this work, it is suggested that the increase of the 0.29 eV defect by voltage-induced stress could be due to electrical activation accompanied by a loss of positive ion species and the activated defect gives rise to reduction of the carrier density. - Highlights: • We investigated behavior of deep level defects by voltage-induced stress. • Defect generation could affect the decrease of the conversion efficiency of cells. • Defect generation could be electrically activated by a loss of positive ion species. • Type of defects could be studied with models of point defects

Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

International Nuclear Information System (INIS)

Kwak, D.W.; Lee, D.W.; Oh, J.S.; Lee, Y.H.; Cho, H.Y.

2012-01-01

SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10 −17 cm 2 , two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10 −14 cm 2 and 0.96 × 10 −15 cm 2 , respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H + ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers. - Highlights: ► We have fabricated low-defective SiGe-on-Insulator (SGOI) with implantation method. ► H + and He + -ions are used for ion-implantation method. ► We have investigated the deep level defects of SGOI layers. ► Ge condensation method using H + ion implantation could reduce extended defects. ► They could enhance electrical properties.

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

Science.gov (United States)

Zhang, Z.; Arehart, A. R.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Ringel, S. A.

2015-01-01

The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 1013 cm-2 and 3 × 1013 cm-2 fluences not only introduces a trap with an EV + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at EV + 0.48 eV, EV + 2.42 eV, EV + 3.00 eV, and EV + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.

Laser spectroscopy and dynamics of transient species

Energy Technology Data Exchange (ETDEWEB)

Clouthier, D.J. [Univ. of Kentucky, Lexington (United States)

1993-12-01

The goal of this program is to study the vibrational and electronic spectra and excited state dynamics of a number of transient sulfur and oxygen species. A variety of supersonic jet techniques, as well as high resolution FT-IR and intracavity dye laser spectroscopy, have been applied to these studies.

Large-Signal Injection-Level Spectroscopy of Impurities in Silicon

International Nuclear Information System (INIS)

Ahrenkiel, R.K.; Johnston, S.W.

1998-01-01

Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to an ultra-pure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model

DLTS and capacitance transients study of defects induced by neutron irradiation in MOS structures CCD process

International Nuclear Information System (INIS)

Ahaitouf, A.; Losson, E.; Charles, J.P.

1999-01-01

The aim of this paper is to study neutron irradiation effects on PMOS capacitors and NMOSFETs transistors. The characterization of induced defects was made by capacitance transients C(t) measurements, DLTS spectroscopy, and optical DLTS (ODLTS). DLTS spectra present three peaks due to deep levels created in the semiconductor and two peaks due to minority carrier generation. Two levels are reported in the literature. Two other minority carrier traps have been observed on ODLTS spectra after irradiation. This can explain the decrease of the minority carrier generation lifetime observed by capacitance transients measurements. (authors)

UNUSUAL LONG AND LUMINOUS OPTICAL TRANSIENT IN THE SUBARU DEEP FIELD

International Nuclear Information System (INIS)

Urata, Yuji; Tsai, Patrick P.; Huang, Kuiyun; Morokuma, Tomoki; Motohara, Kentaro; Yasuda, Naoki; Tanaka, Masaomi; Hayashi, Masao; Kashikawa, Nobunari; Ly, Chun; Malkan, Matthew A.

2012-01-01

We present observations of SDF-05M05, an unusual optical transient discovered in the Subaru Deep Field (SDF). The duration of the transient is > ∼ 800 days in the observer frame, and the maximum brightness during observation reached approximately 23 mag in the i' and z' bands. The faint host galaxy is clearly identified in all five optical bands of the deep SDF images. The photometric redshift of the host yields z ∼ 0.6 and the corresponding absolute magnitude at maximum is ∼ – 20. This implies that this event shone with an absolute magnitude brighter than –19 mag for approximately 300 days in the rest frame, which is significantly longer than a typical supernova and ultraluminous supernova. The total radiated energy during our observation was 1 × 10 51 erg. The light curves and color evolution are marginally consistent with some luminous IIn supernovae. We suggest that the transient may be a unique and peculiar supernova at intermediate redshift.

UNUSUAL LONG AND LUMINOUS OPTICAL TRANSIENT IN THE SUBARU DEEP FIELD

Energy Technology Data Exchange (ETDEWEB)

Urata, Yuji; Tsai, Patrick P. [Institute of Astronomy, National Central University, Chung-Li 32054, Taiwan (China); Huang, Kuiyun [Academia Sinica Institute of Astronomy and Astrophysics, Taipei 106, Taiwan (China); Morokuma, Tomoki; Motohara, Kentaro [Institute of Astronomy, Graduate School of Science, University of Tokyo, Mitaka, Tokyo 181-0015 (Japan); Yasuda, Naoki [Institute for the Physics and Mathematics of the Universe, University of Tokyo, Kashiwa 277-8568 (Japan); Tanaka, Masaomi; Hayashi, Masao; Kashikawa, Nobunari [Optical and Infrared Astronomy Division, National Astronomical Observatory, Mitaka, Tokyo 181-8588 (Japan); Ly, Chun [Space Telescope Science Institute, Baltimore, MD (United States); Malkan, Matthew A., E-mail: urata@astro.ncu.edu.tw [Department of Physics and Astronomy, UCLA, Box 951547, Los Angeles, CA (United States)

2012-11-20

We present observations of SDF-05M05, an unusual optical transient discovered in the Subaru Deep Field (SDF). The duration of the transient is > {approx} 800 days in the observer frame, and the maximum brightness during observation reached approximately 23 mag in the i' and z' bands. The faint host galaxy is clearly identified in all five optical bands of the deep SDF images. The photometric redshift of the host yields z {approx} 0.6 and the corresponding absolute magnitude at maximum is {approx} - 20. This implies that this event shone with an absolute magnitude brighter than -19 mag for approximately 300 days in the rest frame, which is significantly longer than a typical supernova and ultraluminous supernova. The total radiated energy during our observation was 1 Multiplication-Sign 10{sup 51} erg. The light curves and color evolution are marginally consistent with some luminous IIn supernovae. We suggest that the transient may be a unique and peculiar supernova at intermediate redshift.

On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation

Science.gov (United States)

Schmidt, Matthias; Wenckstern, Holger von; Pickenhain, Rainer; Grundmann, Marius

2012-09-01

Electronic defect states in a n-type conducting zinc oxide thin film sample were investigated by means of space charge spectroscopy focussing on levels in the midgap region as well as on hole traps. To overcome the experimental difficulties arising from the wide bandgap and the lack of p-type conduction, optical excitation was employed to measure the emission of trapped charge carriers from these levels. Therefore - besides deep-level transient spectroscopy measurements - photo-capacitance, optically chopped photo-current, minority carrier transient spectroscopy, and optical capacitance-voltage experiments were conducted. In doing so, a midgap level labelled T4, and hole traps labelled TH1 and TH2 were detected. In the case of T4 and TH1 the photo-ionisation cross-section spectra were determined.

Ultraviolet photoelectron spectroscopy of transient species

International Nuclear Information System (INIS)

Leeuw, D.M. de.

1979-01-01

Transient species are studied in the isolation of the gas phase using ultraviolet photoelectron spectroscopy (PES). A description of the equipment used and a discussion of some theoretical topics, which play a role in the interpretation of PE spectra, are given. Koopmans' theorem, Hartree-Fock-Slater (HFS) calculations and the sum rule are discussed. A versatile ultraviolet PE spectrometer, designed specifically for this purpose, has been built and the construction and performance of this instrument are described. (Auth.)

Identification of nitrogen- and host-related deep-level traps in n-type GaNAs and their evolution upon annealing

International Nuclear Information System (INIS)

Gelczuk, Ł.; Kudrawiec, R.; Henini, M.

2014-01-01

Deep level traps in as-grown and annealed n-GaNAs layers (doped with Si) of various nitrogen concentrations (N = 0.2%, 0.4%, 0.8%, and 1.2%) were investigated by deep level transient spectroscopy. In addition, optical properties of GaNAs layers were studied by photoluminescence and contactless electroreflectance. The identification of N- and host-related traps has been performed on the basis of band gap diagram [Kudrawiec, Appl. Phys. Lett. 101, 082109 (2012)], which assumes that the activation energy of electron traps of the same microscopic nature decreases with the rise of nitrogen concentration in accordance with the N-related shift of the conduction band towards trap levels. The application of this diagram has allowed to investigate the evolution of donor traps in GaNAs upon annealing. In general, it was observed that the concentration of N- and host-related traps decreases after annealing and PL improves very significantly. However, it was also observed that some traps are generated due to annealing. It explains why the annealing conditions have to be carefully optimized for this material system.

Diode characteristics and residual deep-level defects of p+n abrupt junctions fabricated by rapid thermal annealing of boron implanted silicon

International Nuclear Information System (INIS)

Usami, A.; Katayama, M.; Wada, T.; Tokuda, Y.

1987-01-01

p + n diodes were fabricated by rapid thermal annealing (RTA) of boron implanted silicon in the annealing temperature range 700-1100 0 C for around 7 s, and the RTA temperature dependence of electrical characteristics of these diodes was studied. Deep-level transient spectroscopy (DLTS) measurements were made to evaluate residual deep-level defects in the n-type bulk. Three electron traps were observed in p + n diodes fabricated by RTA at 700 0 C. It was considered that these three traps were residual point defects near the tail of the implantation damage after RTA. Residual defect concentrations increased in the range 700-900 0 C and decreased in the range 1000-1100 0 C. The growth of defects in the bulk was ascribed to the diffusion of defects from the implanted layer during RTA. Concentrations of electron traps observed in p + n diodes fabricated by RTA at 1100 0 C were approx. 10 12 cm -3 . It was found that these residual deep-level defects observed by DLTS were inefficient generation-recombination centres since the reverse current was independent of the RTA temperatures. (author)

Radiation-induced bistable centers with deep levels in silicon n{sup +}–p structures

Energy Technology Data Exchange (ETDEWEB)

Lastovskii, S. B., E-mail: lastov@ifttp.bas-net.by [Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus (Belarus); Markevich, V. P. [Manchester University, Photon Science Institute (United Kingdom); Yakushevich, H. S.; Murin, L. I. [Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus (Belarus); Krylov, V. P. [Vladimir State University (Russian Federation)

2016-06-15

The method of deep level transient spectroscopy is used to study electrically active defects in p-type silicon crystals irradiated with MeV electrons and α particles. A new radiation-induced defect with the properties of bistable centers is determined and studied. After keeping the irradiated samples at room temperature for a long time or after their short-time annealing at T ∼ 370 K, this defect does not display any electrical activity in p-type silicon. However, as a result of the subsequent injection of minority charge carriers, this center transforms into the metastable configuration with deep levels located at E{sub V} + 0.45 and E{sub V} + 0.54 eV. The reverse transition to the main configuration occurs in the temperature range of 50–100°C and is characterized by the activation energy ∼1.25 eV and a frequency factor of ∼5 × 10{sup 15} s{sup –1}. The determined defect is thermally stable at temperatures as high as T ∼ 450 K. It is assumed that this defect can either be a complex of an intrinsic interstitial silicon atom with an interstitial carbon atom or a complex consisting of an intrinsic interstitial silicon atom with an interstitial boron atom.

Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy

International Nuclear Information System (INIS)

Chung, Sung-Yong; Jin, Niu; Rice, Anthony T.; Berger, Paul R.; Yu, Ronghua; Fang, Z-Q.; Thompson, Phillip E.

2003-01-01

Deep-level transient spectroscopy measurements were performed in order to investigate the effects of substrate growth temperature and dopant species on deep levels in Si layers during low-temperature molecular beam epitaxial growth. The structures studied were n + -p junctions using B doping for the p layer and p + -n junctions using P doping for the n layer. While the density of hole traps H1 (0.38-0.41 eV) in the B-doped p layers showed a clear increase with decreasing growth temperature from 600 to 370 degree sign C, the electron trap density was relatively constant. Interestingly, the minority carrier electron traps E1 (0.42-0.45 eV) and E2 (0.257 eV), found in the B-doped p layers, are similar to the majority carrier electron traps E11 (0.48 eV) and E22 (0.269 eV) observed in P-doped n layers grown at 600 degree sign C. It is hypothesized that these dominating electron traps are associated with pure divacancy defects and are independent of the dopant species

Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells

International Nuclear Information System (INIS)

Dharmarasu, Nethaji; Yamaguchi, Masafumi; Bourgoin, Jacques C.; Takamoto, Tatsuya; Ohshima, Takeshi; Itoh, Hisayoshi; Imaizumi, Mitsuru; Matsuda, Sumio

2002-01-01

We report the properties of observed defects in n + /p-InGaP solar cells created by irradiation of protons of different energies. Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (E v +0.90±0.05 eV), HP2 (E v +0.73±0.05 eV), H2 (E v +0.55 eV), and EP1 (E c -0.54 eV), were identified using deep level transient spectroscopy. All majority-carrier traps were found to act as recombination centers. While the H2 trap present in the proton-irradiated p-InGaP was found to anneal out by minority-carrier injection, the other traps were not

Processes governing transient responses of the deep ocean buoyancy budget to a doubling of CO2

Science.gov (United States)

Palter, J. B.; Griffies, S. M.; Hunter Samuels, B. L.; Galbraith, E. D.; Gnanadesikan, A.

2012-12-01

Recent observational analyses suggest there is a temporal trend and high-frequency variability in deep ocean buoyancy in the last twenty years, a phenomenon reproduced even in low-mixing models. Here we use an earth system model (GFDL's ESM2M) to evaluate physical processes that influence buoyancy (and thus steric sea level) budget of the deep ocean in quasi-steady state and under a doubling of CO2. A new suite of model diagnostics allows us to quantitatively assess every process that influences the buoyancy budget and its temporal evolution, revealing surprising dynamics governing both the equilibrium budget and its transient response to climate change. The results suggest that the temporal evolution of the deep ocean contribution to sea level rise is due to a diversity of processes at high latitudes, whose net effect is then advected in the Eulerian mean flow to mid and low latitudes. In the Southern Ocean, a slowdown in convection and spin up of the residual mean advection are approximately equal players in the deep steric sea level rise. In the North Atlantic, the region of greatest deep steric sea level variability in our simulations, a decrease in mixing of cold, dense waters from the marginal seas and a reduction in open ocean convection causes an accumulation of buoyancy in the deep subpolar gyre, which is then advected equatorward.

Transient behaviour of deep underground salt caverns

International Nuclear Information System (INIS)

Karimi-Jafari, M.

2007-11-01

This work deals with the transient behaviour of deep underground salt caverns. It has been shown that a cavern is a complex system, in which there are mechanical, thermal, chemical and hydraulic evolutions. The importance of the transient evolutions, particularly the role of the 'reverse' creep in the interpretation of the tightness test in a salt cavern is revealed. Creep is characterized by a formulation of the behaviour law which presents the advantage, in a practical point of view, to only have a reduced number of parameters while accounting of the essential of what it is observed. The initiation of the rupture in the effective traction in a salt cavern rapidly pressurized is discussed. A model fitted to a very long term behaviour (after abandonment) is developed too. In this case too, a lot of phenomena, more or less coupled, occur, when the existing literature took only into account some phenomena. (O.M.)

Investigation of photoelectronic processes in CdIn2S4 by photoinduced current transient spectroscopy

International Nuclear Information System (INIS)

Serpi, A.

1986-01-01

Photoelectronic processes in CdIn 2 S 4 are investigated by four-gate photoinduced current transient spectroscopy. In general the photocurrent decay transients are non-exponential because of a nonlinear multichannel recombination mechanism. Nevertheless suitable extrinsic excitation allows to open one recombination channel only and so to evidence a purely exponential relaxation. The detailed analysis of this process leads to the interpretation that the defects associated with the energy levels continuously distributed below the conduction band act as relay centres for radiative recombination of photoelectrons rather than as thermal emitting traps. An electron trapping level located at about 0.6 eV from the bottom of the conduction band is also evidenced. (author)

Deep donor-acceptor pair recombination in bulk GaP studied by ODMR and DLTS techniques

International Nuclear Information System (INIS)

Awadelkarim, O.O.; Godlewski, M.; Monemar, B.

1989-01-01

Deep level transient spectroscopy (DLTS) and optically detected magnetic resonance (ODMR) are applied to study deep defect levels with photoluminescence bands observed in the near infrared region in S- and Te-doped bulk GaP crystals grown by the liquid encapsulated Czochralski method. The ODMR data suggest that the emission bands with maxima observed at 8000-8200 A (∼ 1.5 eV), common to both materials, and at 7750 A (1.6 eV), present only in GaP:Te, are due to donor-acceptor pair recombinations. The latter band, reported here for the first time, is tentatively associated with deep states observed by DLTS. (author) 19 refs., 5 figs

Real-Time Monitoring of Low-Level Mixed-Waste Loading during Polyethylene Microencapsulation using Transient Infrared Spectroscopy

International Nuclear Information System (INIS)

Jones, Roger W.; Kalb, Paul D.; McClelland, John F.; Ochiai, Shukichi

1999-01-01

In polyethylene microencapsulation, low-level mixed waste (LLMW) is homogenized with molten polyethylene and extruded into containers, resulting in a lighter, lower-volume waste form than cementation and grout methods produce. Additionally, the polyethylene-based waste form solidifies by cooling, with no risk of the waste interfering with cure, as may occur with cementation and grout processes. We have demonstrated real-time monitoring of the polyethylene encapsulation process stream using a noncontact device based on transient infrared spectroscopy (TIRS). TIRS can acquire mid-infrared spectra from solid or viscous liquid process streams, such as the molten, waste-loaded polyethylene stream that exits the microencapsulation extruder. The waste loading in the stream was determined from the TIRS spectra using partial least squares techniques. The monitor has been demonstrated during the polyethylene microencapsulation of nitrate-salt LLMW and its surrogate, molten salt oxidation LLMW and its surrogate, and flyash. The monitor typically achieved a standard error of prediction for the waste loading of about 1% by weight with an analysis time under 1 minute

Dynamics in photosynthetic transient complexes studied by paramagnetic NMR spectroscopy

NARCIS (Netherlands)

Scanu, Sandra

2013-01-01

This PhD thesis focuses on fundamental aspects of protein-protein interactions. A multidisciplinary methodology for the detection and visualization of transient, lowly-populated encounter protein complexes is described. The new methodology combined paramagnetic NMR spectroscopy with computational

Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

Science.gov (United States)

Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

2018-04-01

Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC - 2.00 eV, EC - 3.25 eV, and EC - 4.37 eV with concentrations on the order of 1016 cm-3, and a lower concentration level at EC - 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC - 0.1 - 0.2 eV and EC - 0.98 eV. There was no evidence of the commonly observed trap state at ˜EC - 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively "clean" upper part of the bandgap. However, the states at ˜EC - 0.98 eV, EC - 2.00 eV, and EC - 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.

Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy

Science.gov (United States)

Wang, Buguo; Anders, Jason; Leedy, Kevin; Schuette, Michael; Look, David

2018-02-01

InGaZnO (IGZO) is a promising semiconductor material for thin-film transistors (TFTs) used in DC and RF switching applications, especially since it can be grown at low temperatures on a wide variety of substrates. Enhancement-mode TFTs based on IGZO thin films grown by pulsed laser deposition (PLD) have been recently fabricated and these transistors show excellent performance; however, compositional variations and defects can adversely affect film quality, especially in regard to electrical properties. In this study, we use thermally stimulated current (TSC) spectroscopy to characterize the electrical properties and the deep traps in PLD-grown IGZO thin films. It was found that the as-grown sample has a DC activation energy of 0.62 eV, and two major traps with activation energies at 0.16-0.26 eV and at 0.90 eV. However, a strong persistent photocurrent (PPC) sometimes exists in the as-grown sample, so we carry out post-growth annealing in an attempt to mitigate the effect. It was found that annealing in argon increases the conduction, produces more PPC and also makes more traps observable. Annealing in air makes the film more resistive, and removes PPC and all traps but one. This work demonstrates that current-based trap emission, such as that associated with the TSC, can effectively reveal electronic defects in highlyresistive semiconductor materials, especially those are not amenable to capacitance-based techniques, such as deeplevel transient spectroscopy (DLTS).

Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

International Nuclear Information System (INIS)

Lee, H.S.; Yamaguchi, M.; Ekins-Daukes, N. J.; Khan, A.; Takamoto, T.; Agui, T.; Kamimura, K.; Kaneiwa, M.; Imaizumi, M.; Ohshima, T.; Itoh, H.

2005-01-01

Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al 0.08 Ga 0.92 ) 0.52 In 0.48 P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm -1 , which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E ν +0.90±0.05 eV) was observed. The changes in carrier concentrations (Δp) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm -1 , of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm -1 , in p-AlInGaP. From the minority-carrier injection annealing (100 mA/cm 2 ), the annealing activation energy of H2 defect is ΔE=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (V p -P i ). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center

Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy

KAUST Repository

Sun, Jingya; Yang, Yang; Khan, Jafar I.; Alarousu, Erkki; Guo, Zaibing; Zhang, Xixiang; Zhang, Qiang; Mohammed, Omar F.

2014-01-01

We explored for the first time the ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium dioxide was successfully doped layer-by-layer with two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that the carrier trapping time decreases progressively as the doping concentration increases. A global-fitting procedure for the carrier trapping suggests the appearance of two time components: a fast one that is directly associated with carrier trapping to the defect state in the vicinity of the conduction band and a slow one that is attributed to carrier trapping to the deep-level state from the conduction band. With a relatively long doping deposition time on the order of 30 s, a carrier lifetime of about 1 ps is obtained. To confirm that the measured ultrafast carrier dynamics are associated with electron trapping by metal doping, we explored the carrier dynamics of undoped TiO2. The findings reported here may be useful for the implementation of high-speed optoelectronic applications and fast switching devices.

Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy

KAUST Repository

Sun, Jingya

2014-06-11

We explored for the first time the ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium dioxide was successfully doped layer-by-layer with two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that the carrier trapping time decreases progressively as the doping concentration increases. A global-fitting procedure for the carrier trapping suggests the appearance of two time components: a fast one that is directly associated with carrier trapping to the defect state in the vicinity of the conduction band and a slow one that is attributed to carrier trapping to the deep-level state from the conduction band. With a relatively long doping deposition time on the order of 30 s, a carrier lifetime of about 1 ps is obtained. To confirm that the measured ultrafast carrier dynamics are associated with electron trapping by metal doping, we explored the carrier dynamics of undoped TiO2. The findings reported here may be useful for the implementation of high-speed optoelectronic applications and fast switching devices.

Ultrafast Degenerate Transient Lens Spectroscopy in Semiconductor Nanosctructures

Directory of Open Access Journals (Sweden)

Leontyev A.V.

2015-01-01

Full Text Available We report the non-resonant excitation and probing of the nonlinear refractive index change in bulk semiconductors and semiconductor quantum dots through degenerate transient lens spectroscopy. The signal oscillates at the center laser field frequency, and the envelope of the former in quantum dots is distinctly different from the one in bulk sample. We discuss the applicability of this technique for polarization state probing in semiconductor media with femtosecond temporal resolution.

Study of irradiation defects in GaAs

International Nuclear Information System (INIS)

Loualiche, S.

1982-11-01

Characterization techniques: C(V) differential capacity, DLTS deep level transient spectroscopy, DDLTS double deep level transient spectroscopy and DLOS deep level optical spectroscopy are studied and theoretical and experimental fundamentals are re-examined. In particular the centres created by ionic or electronic bombardment of p-type GaAs. New quantitative theoretical bases for the C(V) method are obtained. Study of the optical properties of traps due to irradiation using DLOS. The nature of irradiation defects are discussed [fr

Transient grating spectroscopy in photosynthetic purple bacteria Rhodobacter sphaeroides 2.4.1

Energy Technology Data Exchange (ETDEWEB)

Sugisaki, Mitsuru, E-mail: mitsuru@sci.osaka-cu.ac.j [CREST-JST and Graduate School of Science, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585 (Japan); Fujiwara, Masazumi; Fujii, Ritsuko [CREST-JST and Graduate School of Science, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585 (Japan); Nakagawa, Katsunori; Nango, Mamoru [CREST-JST and Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan); Cogdell, Richard J. [Glasgow Biomedical Research Centre, IBLS, University of Glasgow, 126 University Place, Glasgow G12 8TA, Scotland (United Kingdom); Hashimoto, Hideki [CREST-JST and Graduate School of Science, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585 (Japan)

2009-12-15

The vibronic coherence of photosynthetic pigment-protein complexes has been investigated by means of transient grating spectroscopy using sub 20 fs optical pulses. In the present work, we focus our attention on the LH2 antenna complexes from Rhodobacter sphaeroides 2.4.1 because the information about their structure investigated by the electron and atomic force microscopy is available and the electric levels of pigments are well resolved, resulting in clear absorption spectrum. The vibronic coherent oscillations with a period of a few tens of femtoseconds have been clearly observed. We found that the temporal change of the coherent oscillations reflects the vibrational relaxation in the ground state. Calculations based on the Brownian oscillator model were performed under the impulsive excitation limit. The spectral density has been determined from the Raman measurement of spheroidene. Good agreement between the calculation and the experimental results has been achieved in the linear absorption spectrum and transient grating signal, which strongly supports the validity of our model.

Development of Process Technologies for High-Performance MOS-Based SiC Power Switching Devices

Science.gov (United States)

2007-08-01

epilayers studied by positron annihilation and deep level transient spectroscopy ," Appl. Phys. Lett., vol. 90, p. 3377, 2001. [30] L. Storasta, J. P...the projected long-term lifetime is acceptable for power device applications . For devices in which the MOS interface is formed on implanted layers...TRPL) techniques, while deep level centers in the material are characterized by deep-level transient spectroscopy (DLTS). We found that the

Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

International Nuclear Information System (INIS)

Nyamhere, C.; Botha, J.R.; Venter, A.

2011-01-01

Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E C -0.33 eV, E C -0.36 eV, E C -0.38 eV and E C -0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E C -0.58 eV. Isochronal annealing of the passivated material between 50 and 300 o C, revealed the emergence of a secondary defect, not previously observed, at E C -0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 o C, as all the defects originally observed in the reference sample were recovered.

Investigation of deep level defects in epitaxial semiconducting zinc sulpho-selenide. Progress report, 15 June 1979-14 June 1980

International Nuclear Information System (INIS)

Wessels, B.W.

1980-01-01

In an effort to understand the defect structure of the ternary II-VI compound zinc sulpho-selenide, the binary compound zinc selenide was investigated. Thin single crystalline films of zinc selenide were heteroepitaxially grown on (100) GaAs. Epitaxial layers from 5 to 50 microns thick could be readily grown using a chemical vapor transport technique. The layers had an excellent morphology with few stacking faults and hillocks. Detailed epitaxial growth kinetics were examined as a function of temperature and reactant concentration. It was found that hydrogen flow rate, source and substrate temperature affect the growth rate of the epitaxial films. Au - ZnSe Schottky barrier diodes and ZnSe - GaAs n-p heterojunctions were prepared from the epitaxial layers. Current-voltage characteristics were measured on both types of diodes. From capacitance-voltage measurements the residual doping density of the epitaxial layers were found to be of the order of 10 14 - 10 15 cm -3 . Finally, we have begun to measure the deep level spectrum of both the Schottky barrier diodes and the heterojunctions. Deep level transient spectroscopy appears to be well suited for determining trapping states in ZnSe provided the material has a low enough resistivity

Characterization of semi-insulating materials by photoinduced current transient spectroscopy: Fe doped INP for micro-optoelectronics and CdZnTe for nuclear detection

International Nuclear Information System (INIS)

Cherkaoui, K.

1998-01-01

The need of semi-insulating materials, of great quality, concerns various application domains. For instance, the very resistive substrates InP and CdZnTe are respectively adapted to the micro-optoelectronic circuits and to nuclear detectors. These two materials have been characterized by the thermal photoinduced current transient spectroscopy. The first part of this thesis is the defects analysis of annealing InP substrates, to understand the compensation process of this material. Two activation energy levels around 0,2 to 0,4 eV resulting from the thermal treatment have been detected. The iron omnipresence in the substrates, even undoped, has been noticed. It is then necessary to take into account the iron presence to understand the compensation process in these InP annealing substrates. the second part presents the study of the CdZnTe material, elaborated by the Bridgman method, to emphasize the defects leading to the decrease of the detector performances. The presence of three deep levels, near the forbidden band middle, is in relation with the detectors performances. (A.L.B.)

Effect of deep native defects on ultrasound propagation in TlInS{sub 2} layered crystal

Energy Technology Data Exchange (ETDEWEB)

Seyidov, MirHasan Yu., E-mail: smirhasan@gtu.edu.tr [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid Avenue, 33, AZ-1143 Baku (Azerbaijan); Suleymanov, Rauf A. [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid Avenue, 33, AZ-1143 Baku (Azerbaijan); Odrinsky, Andrei P. [Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov Avenue 13, Vitebsk 210717 (Belarus); Kırbaş, Cafer [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); The Scientific and Technological Research Council of Turkey, National Metrology Institute (TUBITAK UME), PQ 54 41470 Gebze, Kocaeli (Turkey)

2016-09-15

We have investigated p-type semiconductor–ferroelectric TlInS{sub 2} by means of Photo-Induced Current Transient Spectroscopy (PICTS) technique in the temperature range 77–350 K for the detection of native deep defect levels in TlInS{sub 2}. Five native deep defect levels were detected and their energy levels and capture cross sections were evaluated. Focusing on these data, the influence of these defects on the longitudinal and transverse ultrasound waves propagation as well as the effect of electric field on ultrasound waves were studied at different temperatures. The acoustic properties were investigated by the pulse-echo method. The direct contribution of thermally activated charged defects to the acoustic properties of TlInS{sub 2} was demonstrated. The key role of charged native deep level defects in elastic properties of TlInS{sub 2} was shown.

Determination of deep-level impurities and their effects on the small-single and LF noise properties of ion-implanted GaAs MESFETs

International Nuclear Information System (INIS)

Sriram, S.; Kim, B.; Ghosh, P.K.; Das, M.B.; Pennsylvania State Univ., University Park; Pennsylvania State Univ., University Park

1982-01-01

A large number of deep levels, with energies ranging from Esub(c)-0.19eV to Esub(c)-0.9eV, have been identified and characterized using ion-implanted MESFET's on undoped and Cr-doped LEC-grown semi-insulating GaAs substrates. Measurement techniques used include deep level transient (DLTS) and steady state spectroscopic (DLSS) methods. Large capture cross-section values are obtained for levels below Esub(c)-0.5eV, possibly due to high electric field. Spectral densities of LF noise with distinct bulges have been shown to be related to deep levels. In some samples, natural deep level related oscillations have been observed and their ionization energies have been determined. (author)

Deep defect levels in standard and oxygen enriched silicon detectors before and after **6**0Co-gamma-irradiation

CERN Document Server

Stahl, J; Lindström, G; Pintilie, I

2003-01-01

Capacitance Deep Level Transient Spectroscopy (C-DLTS) measurements have been performed on standard and oxygen-doped silicon detectors manufactured from high-resistivity n-type float zone material with left angle bracket 111 right angle bracket and left angle bracket 100 right angle bracket orientation. Three different oxygen concentrations were achieved by the so-called diffusion oxygenated float zone (DOFZ) process initiated by the CERN-RD48 (ROSE) collaboration. Before the irradiation a material characterization has been performed. In contrast to radiation damage by neutrons or high- energy charged hadrons, were the bulk damage is dominated by a mixture of clusters and point defects, the bulk damage caused by **6**0Co-gamma-radiation is only due to the introduction of point defects. The dominant electrically active defects which have been detected after **6**0Co-gamma-irradiation by C-DLTS are the electron traps VO//i, C//iC//s, V//2( = /-), V //2(-/0) and the hole trap C//i O//i. The main difference betwe...

Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

Energy Technology Data Exchange (ETDEWEB)

Nyamhere, C., E-mail: s210239522@live.nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Botha, J.R.; Venter, A. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

2011-05-15

Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E{sub C}-0.33 eV, E{sub C}-0.36 eV, E{sub C}-0.38 eV and E{sub C}-0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E{sub C}-0.58 eV. Isochronal annealing of the passivated material between 50 and 300 {sup o}C, revealed the emergence of a secondary defect, not previously observed, at E{sub C}-0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 {sup o}C, as all the defects originally observed in the reference sample were recovered.

Ultrafast carrier dynamics of titanic acid nanotubes investigated by transient absorption spectroscopy.

Science.gov (United States)

Wang, Li; Zhao, Hui; Pan, Lin Yun; Weng, Yu Xiang; Nakato, Yoshihiro; Tamai, Naoto

2010-12-01

Carrier dynamics of titanic acid nanotubes (phase of H2Ti2O5.H2O) deposited on a quartz plate was examined by visible/near-IR transient absorption spectroscopy with an ultraviolet excitation. The carrier dynamics of titanic acid nanotubes follows the fast trapping process which attributed to the intrinsic tubular structure, the relaxation of shallow trapped carriers and the recombination as a second-order kinetic process. Transient absorption of titanic acid nanotubes was dominated by the absorption of surface-trapped holes in visible region around 500 nm, which was proved by the faster decay dynamics in the presence of polyvinyl alcohol as a hole-scavenger. However, the slow relaxation of free carriers was much more pronounced in the TiO2 single crystals, as compared with the transient absorption spectra of titanic acid nanotubes under the similar excitation.

Femtosecond transient absorption spectroscopy of silanized silicon quantum dots

Science.gov (United States)

Kuntermann, Volker; Cimpean, Carla; Brehm, Georg; Sauer, Guido; Kryschi, Carola; Wiggers, Hartmut

2008-03-01

Excitonic properties of colloidal silicon quantum dots (Si qdots) with mean sizes of 4nm were examined using stationary and time-resolved optical spectroscopy. Chemically stable silicon oxide shells were prepared by controlled surface oxidation and silanization of HF-etched Si qdots. The ultrafast relaxation dynamics of photogenerated excitons in Si qdot colloids were studied on the picosecond time scale from 0.3psto2.3ns using femtosecond-resolved transient absorption spectroscopy. The time evolution of the transient absorption spectra of the Si qdots excited with a 150fs pump pulse at 390nm was observed to consist of decays of various absorption transitions of photoexcited electrons in the conduction band which overlap with both the photoluminescence and the photobleaching of the valence band population density. Gaussian deconvolution of the spectroscopic data allowed for disentangling various carrier relaxation processes involving electron-phonon and phonon-phonon scatterings or arising from surface-state trapping. The initial energy and momentum relaxation of hot carriers was observed to take place via scattering by optical phonons within 0.6ps . Exciton capturing by surface states forming shallow traps in the amorphous SiOx shell was found to occur with a time constant of 4ps , whereas deeper traps presumably localized in the Si-SiOx interface gave rise to exciton trapping processes with time constants of 110 and 180ps . Electron transfer from initially populated, higher-lying surface states to the conduction band of Si qdots (>2nm) was observed to take place within 400 or 700fs .

In vivo measurements of cerebral metabolic abnormalities by proton spectroscopy after a transient ischemic attack revealing an internal carotid stenosis > 70%

International Nuclear Information System (INIS)

Giroud, M.; Becker, F.; Lemesle, M.; Walker, P.; Guy, F.; Martin, D.; Baudouin, N.; Brunotte, F.; Dumas, R.

1996-01-01

Aims: The aim of this work is to look for cerebral metabolic abnormalities within the first 3 days after a transient ischemic attack revealing an internal carotid stenosis > 70 %. Methods: Five patients with a transient ischemic attack lasting between 30 and 180 minutes, affecting sensory and motor brachio-facial territory, with or without aphasia. Were studied. A CT-scan, an EEG, a cervical Doppler ultrasound, a standard arteriography, a magnetic resonance imaging and a proton spectroscopy were performed within the cerebral area affected by the transient ischemic attack. We measured 2 markers: N-acetyl-aspartate, the marker of the neuronal mass, and lactate, the marker of anaerobe metabolism. In each case, a contralateral internal stenosis was diagnosed by cervical Doppler ultrasound and standard arteriography. No cerebral infarction was observed. Results: With the affected cerebral area defined according to clinical and EEG features, proton spectroscopy showed a significant rise of lactate, without any change in N-acetyl-aspartate levels. Conclusions: Within the first 3 days after a transient ischemic attack, there is a significant risk of lactate inside the affected cerebral area. This change may reflect a localized and transient hypoperfusion, but long enough to induce a rise of lactate but not sufficient to produce a cerebral infarct. This area is probably at risk to induce cerebral infarct. This data lead us to study the metabolic change induced by the asymptomatic internal carotid stenosis. (authors). 18 refs

Microseism Induced by Transient Release of In Situ Stress During Deep Rock Mass Excavation by Blasting

Science.gov (United States)

Yang, Jianhua; Lu, Wenbo; Chen, Ming; Yan, Peng; Zhou, Chuangbing

2013-07-01

During deep rock mass excavation with the method of drill and blast, accompanying the secession of rock fragments and the formation of a new free surface, in situ stress on this boundary is suddenly released within several milliseconds, which is termed the transient release of in situ stress. In this process, enormous strain energy around the excavation face is instantly released in the form of kinetic energy and it inevitably induces microseismic events in surrounding rock masses. Thus, blasting excavation-induced microseismic vibrations in high-stress rock masses are attributed to the combined action of explosion and the transient release of in situ stress. The intensity of stress release-induced microseisms, which depends mainly on the magnitude of the in situ stress and the dimension of the excavation face, is comparable to that of explosion-induced vibrations. With the methods of time-energy density analysis, amplitude spectrum analysis, and finite impulse response (FIR) digital filter, microseismic vibrations induced by the transient release of in situ stress were identified and separated from recorded microseismic signals during a blast of deep rock masses in the Pubugou Hydropower Station. The results show that the low-frequency component in the microseismic records results mainly from the transient release of in situ stress, while the high-frequency component originates primarily from explosion. In addition, a numerical simulation was conducted to demonstrate the occurrence of microseismic events by the transient release of in situ stress, and the results seem to have confirmed fairly well the separated vibrations from microseismic records.

Uncovering molecular relaxation processes with nonlinear spectroscopies in the deep UV

International Nuclear Information System (INIS)

West, Brantley A.; Molesky, Brian P.; Giokas, Paul G.; Moran, Andrew M.

2013-01-01

Highlights: • We discuss the outlook for multidimensional spectroscopies in the deep UV. • Photophysics are examined in small DNA components at cryogenic temperatures. • Wavepacket motions are detected in ring-opening systems with 2DUV spectroscopy. • Measurements of electronic wavepacket motions in molecules are proposed. - Abstract: Nonlinear laser spectroscopies in the deep UV spectral range are motivated by studies of biological systems and elementary processes in small molecules. This perspective article discusses recent technical advances in this area with a particular emphasis on diffractive optic based approaches to four-wave mixing spectroscopies. Applications to two classes of systems illustrate present experimental capabilities. First, experiments on DNA components at cryogenic temperatures are used to uncover features of excited state potential energy surfaces and vibrational cooling mechanisms. Second, sub-200 fs internal conversion processes and coherent wavepacket motions are investigated in cyclohexadiene and α-terpinene. Finally, we propose new experimental directions that combine methods for producing few-cycle UV laser pulses in noble gases with incoherent detection methods (e.g., photoionization) in experiments with time resolution near a singlefemtosecond. These measurements are motivated by knowledge of extremely fast non-adiabatic dynamics and the resolution of electronic wavepacket motions in molecules

Lithium compensation of GaAs

International Nuclear Information System (INIS)

Alexiev, D.; Tavendale, A.J.

1988-08-01

Defects generated following Li diffusion into GaAs were studied by optical deep level transient spectroscopy (ODLTS) and deep level transient spectroscopy (DLTS). In an exploratory series of experiments, the effect of Li diffusion on existing trap spectra, defect generation and as a means for the compensation of GaAs was studied. The variables included diffusion temperature, initial trap spectra of GaAs and annealing periods. Detailed measurements of trap energies were made

Influence of surface pre-treatment on the electronic levels in silicon MaWCE nanowires.

Science.gov (United States)

Venturi, Giulia; Castaldini, Antonio; Schleusener, Alexander; Sivakov, Vladimir; Cavallini, Anna

2015-05-15

Deep level transient spectroscopy (DLTS) was performed on n-doped silicon nanowires grown by metal-assisted wet chemical etching (MaWCE) with gold as the catalyst in order to investigate the energetic scheme inside the bandgap. To observe the possible dependence of the level scheme on the processing temperature, DLTS measurements were performed on the nanowires grown on a non-treated Au/Si surface and on a thermally pre-treated Au/Si surface. A noticeable modification of the configuration of the energy levels was observed, induced by the annealing process. Based on our results on these MaWCE nanowires and on literature data about deep levels in bulk silicon, some hypotheses were advanced regarding the identification of the defects responsible of the energy levels revealed.

Effect of deep dislocation levels in silicon on the properties of p-n junctions

Energy Technology Data Exchange (ETDEWEB)

Zakharov, A.G.; Dudko, V.G.; Nabokov, G.M.; Sechenov, D.A.

1988-07-01

We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10/sup /minus/7/ sec to 3 /centered dot/10/sup /minus/6/ sec when the dislocation density N/sub d/ varies from 10/sup 7/ cm/sup /minus/2/ to 5 /centered dot/10/sup 3/ cm/sup /minus/2/. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N/sub d/. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.

Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

International Nuclear Information System (INIS)

Armstrong, Andrew M.; Moseley, Michael W.; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan J.

2015-01-01

The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al 0.7 Ga 0.3 N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, including thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al 0.7 Ga 0.3 N

Analyses of compensation related defects in II-VI compounds

International Nuclear Information System (INIS)

Castaldini, A.; Cavallini, A.; Fraboni, B.; Fernandez, P.; Piqueras, J.

1998-01-01

The deep levels present in semiconducting CdTe and semi-insulating (SI) CdTe:Cl and Cd 0.8 Zn 0.2 Te have been investigated by means of cathodoluminescence (CL), deep level transient spectroscopy (DLTS), photo-DLTS (PDLTS) and photo induced current transient spectroscopy (PICTS). PICTS and PDLTS can be applied to SI materials and allowed to determine whether the observed deep levels are hole or electron traps. Among the observed deep centers, the authors have focused their attention on those involved in the compensation process such as the so called center A and the deep traps located near midgap. They have identified a deep acceptor, labelled H, and a deep donor, labelled E, the latter is peculiar to CdTe:Cl and can be a good candidate for the deep donor level needed to explain the compensation process in SI CdTe:Cl

Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

International Nuclear Information System (INIS)

Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

2013-01-01

The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T g ) and T g ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T g on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T g (800 °C) GaN films grown under QB conditions were compared to deep level spectra of high T g (1150 °C) GaN. Reducing T g , increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09 eV and 2.9 eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T g substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T g GaN growth to active layer growth can mitigate such non-radiative channels

Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS2 layered semiconductor

International Nuclear Information System (INIS)

Seyidov, MirHasan Yu.; Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

2015-01-01

Lanthanum-doped high quality TlInS 2 (TlInS 2 :La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS 2 :La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS 2 :La. Thermal treatments of TlInS 2 :La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10 −14 cm 2 , corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS 2 :La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10 −16 cm 2 were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles, which are originated from the charged B5

Special issue on the spectroscopy of transient plasmas

Science.gov (United States)

Bailey, James; Hoarty, David; Mancini, Roberto; Yoneda, Hitoki

2015-01-01

Experimental and theoretical papers are invited for a special issue of Journal of Physics B: Atomic, Molecular and Optical Physics on Spectroscopy of Transient Plasmas, covering plasma conditions produced by pulsed laboratory sources including for example, short and long pulse lasers; pulsed power devices; FELs; XFELs and ion beams. The full range of plasma spectroscopy from the optical range up to high energy bremsstrahlung radiation will be covered. The deadline for submitting to this special issue is 1 March 2015. (Expected web publication: autumn 2015). Late submissions will be considered for the journal, but may not be included in the special issue. All submitted articles will be fully refereed to the journal's usual high standards. Upon publication, the issue will be widely promoted to the atomic, molecular and optical physics community, ensuring that your work receives maximum visibility. Articles should be submitted at http://mc04.manuscriptcentral.com/jphysb-iop. Should you have any questions regarding the preparation of manuscripts or the suitability of your work for this Issue, please do not hesitate to contact the J. Phys. B: At. Mol. Opt. Editorial team (jphysb@iop.org). We look forward to hearing from you and hope that we can welcome you as a contributing author.

Spontaneous Ca2+ transients in interstitial cells of Cajal located within the deep muscular plexus of the murine small intestine

Science.gov (United States)

Baker, Salah A.; Drumm, Bernard T.; Saur, Dieter; Hennig, Grant W.; Ward, Sean M.

2016-01-01

Key points Interstitial cells of Cajal at the level of the deep muscular plexus (ICC‐DMP) in the small intestine generate spontaneous Ca2+ transients that consist of localized Ca2+ events and limited propagating Ca2+ waves.Ca2+ transients in ICC‐DMP display variable characteristics: from discrete, highly localized Ca2+ transients to regionalized Ca2+ waves with variable rates of occurrence, amplitude, duration and spatial spread.Ca2+ transients fired stochastically, with no cellular or multicellular rhythmic activity being observed. No correlation was found between the firing sites in adjacent cells.Ca2+ transients in ICC‐DMP are suppressed by the ongoing release of inhibitory neurotransmitter(s).Functional intracellular Ca2+ stores are essential for spontaneous Ca2+ transients, and the sarco/endoplasmic reticulum Ca2+‐ATPase (SERCA) pump is necessary for maintenance of spontaneity.Ca2+ release mechanisms involve both ryanodine receptors (RyRs) and inositol triphosphate receptors (InsP3Rs). Release from these channels is interdependent.ICC express transcripts of multiple RyRs and InsP3Rs, with Itpr1 and Ryr2 subtypes displaying the highest expression. Abstract Interstitial cells of Cajal in the deep muscular plexus of the small intestine (ICC‐DMP) are closely associated with varicosities of enteric motor neurons and generate responses contributing to neural regulation of intestinal motility. Responses of ICC‐DMP are mediated by activation of Ca2+‐activated Cl− channels; thus, Ca2+ signalling is central to the behaviours of these cells. Confocal imaging was used to characterize the nature and mechanisms of Ca2+ transients in ICC‐DMP within intact jejunal muscles expressing a genetically encoded Ca2+ indicator (GCaMP3) selectively in ICC. ICC‐DMP displayed spontaneous Ca2+ transients that ranged from discrete, localized events to waves that propagated over variable distances. The occurrence of Ca2+ transients was highly variable, and it was

Spontaneous Ca(2+) transients in interstitial cells of Cajal located within the deep muscular plexus of the murine small intestine.

Science.gov (United States)

Baker, Salah A; Drumm, Bernard T; Saur, Dieter; Hennig, Grant W; Ward, Sean M; Sanders, Kenton M

2016-06-15

Interstitial cells of Cajal at the level of the deep muscular plexus (ICC-DMP) in the small intestine generate spontaneous Ca(2+) transients that consist of localized Ca(2+) events and limited propagating Ca(2+) waves. Ca(2+) transients in ICC-DMP display variable characteristics: from discrete, highly localized Ca(2+) transients to regionalized Ca(2+) waves with variable rates of occurrence, amplitude, duration and spatial spread. Ca(2+) transients fired stochastically, with no cellular or multicellular rhythmic activity being observed. No correlation was found between the firing sites in adjacent cells. Ca(2+) transients in ICC-DMP are suppressed by the ongoing release of inhibitory neurotransmitter(s). Functional intracellular Ca(2+) stores are essential for spontaneous Ca(2+) transients, and the sarco/endoplasmic reticulum Ca(2+) -ATPase (SERCA) pump is necessary for maintenance of spontaneity. Ca(2+) release mechanisms involve both ryanodine receptors (RyRs) and inositol triphosphate receptors (InsP3 Rs). Release from these channels is interdependent. ICC express transcripts of multiple RyRs and InsP3 Rs, with Itpr1 and Ryr2 subtypes displaying the highest expression. Interstitial cells of Cajal in the deep muscular plexus of the small intestine (ICC-DMP) are closely associated with varicosities of enteric motor neurons and generate responses contributing to neural regulation of intestinal motility. Responses of ICC-DMP are mediated by activation of Ca(2+) -activated Cl(-) channels; thus, Ca(2+) signalling is central to the behaviours of these cells. Confocal imaging was used to characterize the nature and mechanisms of Ca(2+) transients in ICC-DMP within intact jejunal muscles expressing a genetically encoded Ca(2+) indicator (GCaMP3) selectively in ICC. ICC-DMP displayed spontaneous Ca(2+) transients that ranged from discrete, localized events to waves that propagated over variable distances. The occurrence of Ca(2+) transients was highly variable, and it

Tin-vacancy acceptor levels in electron-irradiated n-type silicon

DEFF Research Database (Denmark)

Larsen, A. Nylandsted; Goubet, J. J.; Mejlholm, P.

2000-01-01

Si crystals (n-type, fz) with doping levels between 1.5x10(14) and 2x10(16)cm(-3) containing in addition similar to 10(18) Sn/cm(3) were irradiated with 2-MeV electrons to different doses and subsequently studied by deep level transient spectroscopy, Mossbauer spectroscopy, and positron...... annihilation. Two tin-vacancy (Sn-V) levels at E-c - 0.214 eV and E-c - 0.501 eV have been identified (E-c denotes the conduction band edge). Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal...... temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating...

Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Armstrong, Andrew M; Allerman, Andrew A; Baca, Albert G; Sanchez, Carlos A

2013-01-01

The influence of deep levels defects located in highly resistive GaN:C buffers on the on-resistance (R ON ) and threshold voltage (V th ) of AlGaN/GaN high electron mobility transistors (HEMTs) power devices was studied by a combined photocapacitance deep level optical spectroscopy (C-DLOS) and photoconductance deep level optical spectroscopy (G-DLOS) methodology as a function of electrical stress. Two carbon-related deep levels at 1.8 and 2.85 eV below the conduction band energy minimum were identified from C-DLOS measurements under the gate electrode. It was found that buffer-related defects under the gate shifted V th positively by approximately 10%, corresponding to a net areal density of occupied defects of 8 × 10 12 cm −2 . The effect of on-state drain stress and off-state gate stress on buffer deep level occupancy and R ON was also investigated via G-DLOS. It was found that the same carbon-related deep levels observed under the gate were also active in the access region. Off-state gate stress produced significantly more trapping and degradation of R ON (∼140%) compared to on-state drain stress (∼75%). Greater sensitivity of R ON to gate stress was explained by a more sharply peaked lateral distribution of occupied deep levels between the gate and drain compared to drain stress. The overall greater sensitivity of R ON compared to V th to buffer defects suggests that electron trapping is significantly greater in the access region compared to under the gate, likely due to the larger electric fields in the latter region. (invited paper)

Fusion of Ultraviolet-Visible and Infrared Transient Absorption Spectroscopy Data to Model Ultrafast Photoisomerization.

Science.gov (United States)

Debus, Bruno; Orio, Maylis; Rehault, Julien; Burdzinski, Gotard; Ruckebusch, Cyril; Sliwa, Michel

2017-08-03

Ultrafast photoisomerization reactions generally start at a higher excited state with excess of internal vibrational energy and occur via conical intersections. This leads to ultrafast dynamics which are difficult to investigate with a single transient absorption spectroscopy technique, be it in the ultraviolet-visible (UV-vis) or infrared (IR) domain. On one hand, the information available in the UV-vis domain is limited as only slight spectral changes are observed for different isomers. On the other hand, the interpretation of vibrational spectra is strongly hindered by intramolecular relaxation and vibrational cooling. These limitations can be circumvented by fusing UV-vis and IR transient absorption spectroscopy data in a multiset multivariate curve resolution analysis. We apply this approach to describe the spectrodynamics of the ultrafast cis-trans photoisomerization around the C-N double bond observed for aromatic Schiff bases. Twisted intermediate states could be elucidated, and isomerization was shown to occur through a continuous complete rotation. More broadly, data fusion can be used to rationalize a vast range of ultrafast photoisomerization processes of interest in photochemistry.

Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

Energy Technology Data Exchange (ETDEWEB)

Seyidov, MirHasan Yu., E-mail: smirhasan@gyte.edu.tr; Suleymanov, Rauf A.; Mikailzade, Faik A. [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid ave. 33, Baku AZ-1143 (Azerbaijan); Kargın, Elif Orhan [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Odrinsky, Andrei P. [Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov ave. 13, Vitebsk 210717 (Belarus)

2015-06-14

Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles

Transient Spectroscopy of Photoexcitations and Morphology Control of Organometal Trihalide Perovskites

Science.gov (United States)

Zhai, Yaxin; Lafalce, Evan; Sheng, Chuan-Xiang; Zhang, Chuang; Sun, Dali; Vardeny, Zeev Valy

We studied the photoexcitation dynamics in various hybrid perovskites by using broadband ps transient photomodulation (PM) spectroscopy and variable stripe length (VSL) technique. We observed both excitonic and free carriers spectral features in MAPbI3 but mainly excitonic transition in MAPbI1.1Br1.9 and MAPbI3-xClx films. We also fabricated MAPbBr3 films with nano-crystal pinning (NCP) treatment, which allows for smaller crystalline grain size. The transient spectra show a narrower and longer-lived photobleaching band in NCP treated films consistent with the increase in the photoluminescence efficiency. In addition the net optical gain measured by VSL is markedly increased up to 300 cm-1, and the lasing threshold is concurrently reduced. Measurement of the waveguide losses in the NCP films shows that the improvement in lasing properties can partly be attributed to the reduced optical scattering. Work supported by the AFOSR through a MURI Grant RA 9550-14-1-0037.

Defect identification using positrons

International Nuclear Information System (INIS)

Beling, C.D.; Fung, S.

2001-01-01

The current use of the lifetime and Doppler broadening techniques in defect identification is demonstrated with two studies, the first being the identification of carbon vacancy in n-6H SiC through lifetime spectroscopy, and the second the production of de-hydrogenated voids in α-Si:H through light soaking. Some less conventional ideas are presented for more specific defect identification, namely (i) the amalgamation of lifetime and Doppler techniques with conventional deep level transient spectroscopy in what may be called ''positron-deep level transient spectroscopy'', and (ii) the extraction of more spatial information on vacancy defects by means of what may be called ''Fourier transform Doppler broadening of annihilation radiation spectroscopy'' (orig.)

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Energy Technology Data Exchange (ETDEWEB)

Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

2015-07-28

Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

Transient behaviour of deep underground salt caverns; Comportement transitoire des cavites salines profondes

Energy Technology Data Exchange (ETDEWEB)

Karimi-Jafari, M

2007-11-15

This work deals with the transient behaviour of deep underground salt caverns. It has been shown that a cavern is a complex system, in which there are mechanical, thermal, chemical and hydraulic evolutions. The importance of the transient evolutions, particularly the role of the 'reverse' creep in the interpretation of the tightness test in a salt cavern is revealed. Creep is characterized by a formulation of the behaviour law which presents the advantage, in a practical point of view, to only have a reduced number of parameters while accounting of the essential of what it is observed. The initiation of the rupture in the effective traction in a salt cavern rapidly pressurized is discussed. A model fitted to a very long term behaviour (after abandonment) is developed too. In this case too, a lot of phenomena, more or less coupled, occur, when the existing literature took only into account some phenomena. (O.M.)

Midgap traps related to compensation processes in CdTe alloys

International Nuclear Information System (INIS)

Castaldini, A.; Cavallini, A.; Fraboni, B.; Fernandez, P.; Piqueras, J.

1997-01-01

We study, by cathodoluminescence and junction spectroscopy methods, the deep traps located near midgap in semiconducting and semi-insulating II-VI compounds, namely, undoped CdTe, CdTe:Cl, and Cd 0.8 Zn 0.2 Te. In order to understand the role such deep levels play in the control of the electrical properties of the material, it appears necessary to determine their character, donor, or acceptor, in addition to their activation energy and capture cross section. Photoinduced-current transient spectroscopy and photo deep-level transient spectroscopy are used to investigate the semi-insulating (SI) samples, and a comparison of the complementary results obtained allows us to identify an acceptor trap, labeled H, and an electron trap, labeled E. Level H is common to all investigated compounds, while E is present only in CdTe:Cl samples. This provides clear experimental evidence of the presence of a deep trap in CdTe:Cl, which could be a good candidate for the deep donor level needed to explain the compensation process of SI CdTe:Cl. copyright 1997 The American Physical Society

Radiotracer Spectroscopy on Group II Acceptors in GaN

CERN Multimedia

2002-01-01

The semiconductor GaN is already used for the production of high power light emitting diodes in the blue and UV spectral range. But the $\\rho$-type doping, which is usually obtained by Mg doping, is still inefficient due to compensation and passivation effects caused by defects present in the material. It is theoretically predicted, that Be is a more promising candidate for $\\rho$-doping with a lower ionization energy of 60meV. It is our goal to investigate the electrical and optical properties of Be- and Mg-related defects in GaN to clarify the problem of compensation and passivation. The used methods are standard spectroscopic methods in semiconductor physics which are improved by using radioactive isotopes. The radioactive decay of $^{7}$Be and $^{28}$Mg is used to clearly correlate different signals with Be or Mg related defects. We intend to use the spectroscopic techniques Deep Level Transient Spectroscopy (DLTS), Thermal Admittance Spectroscopy (TAS), photoluminescence (PL) and additionally Hall-effect...

The study of the deep levels of In/CdTe Schottky diode

International Nuclear Information System (INIS)

Kim, Hey-kyeong; Jeen, Gwangsoo; Nam, S.H.

2000-01-01

p-type CdTe is an important component of II-VI compound based solar cells as well as a promising substance for X- and gamma-ray detector. Despite that a lot of researches has been performed on CdTe, the manufacture of large homogeneous ingots with high resistivity (ρ) and a high value of lifetime-mobility product (μτ) still difficult. Both ρ and μτ, which determine detection properties, are strongly dependent on the impurity and defect levels of crystals. As in general, deep defect levels act as recombination centers and influence strongly the efficiency of the detector material, so information about deep levels is an essential need. To estimate deep levels of semiconductor materials, the TSC (thermally stimulated current), TSCD (thermally stimulated capacitor discharges) and admittance spectroscopic method are used. In order to study the deep levels of CdTe, the samples were taken from a CdTe-crystal grown by the vertical Bridgman method. From this boule single crystalline samples of about 0.5 mm thickness were prepared. All samples were initially p-type which was determined by the hot-probe method. In-CdTe Schottky diodes were prepared by the process of evaporation of In in the vacuum of 10 -6 Torr on surface of CdTe. The area of the deposited contact was equal to 1.626 mm 2 . As ohmic contacts, dots of Au soldered for 30 min. in temperature 160 deg C. Measurements were carried out within a 100-250 K temperature and 1-10 kHz frequency range. Related Arrhenius plots, i.e. the experimentally determined emission rates corresponding to the signal maximum divided by the square of temperature as a function of reciprocal temperature are plotted. The experimental data were best fitted by the least-square method. The fitting yielded the defect level energies E T . In this study, by using admittance spectroscopy measurements, we presented the information about the energy and concentration of the defect levels inside the gap, in order to improve the quality of

As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN

International Nuclear Information System (INIS)

Chen Shang; Ishikawa, Kenji; Hori, Masaru; Honda, Unhi; Shibata, Tatsunari; Matsumura, Toshiya; Tokuda, Yutaka; Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu

2012-01-01

Traps of energy levels E c -0.26 and E c -0.61 eV have been identified as as-grown traps in n-GaN grown by metal-organic chemical vapor deposition by using deep level transient spectroscopy of the Schottky contacts fabricated by resistive evaporation. The additional traps of E c -0.13 and E c -0.65 eV have been observed in samples whose contacts are deposited by electron-beam evaporation. An increase in concentration of the E c -0.13 and E c -0.65 eV traps when approaching the interface between the contact and the GaN film supports our argument that these traps are induced by electron-beam irradiation. Conversely, the depth profiles of as-grown traps show different profiles between several samples with increased or uniform distribution in the near surface below 50 nm. Similar profiles are observed in GaN grown on a sapphire substrate. We conclude that the growth process causes these large concentrations of as-grown traps in the near-surface region. It is speculated that the finishing step in the growth process should be an essential issue in the investigation of the surface state of GaN.

Levels-of-processing effects on recollection and familiarity during transient global amnesia and after recovery.

Science.gov (United States)

Thoma, Patrizia; Schwarz, Michael; Daum, Irene

2010-11-01

The aim of the present study was to investigate the pattern of recollection and familiarity deficits and the modulation of recognition memory performance by the depth of encoding (deep vs. shallow) in transient global amnesia (TGA). Ten patients with TGA and 11 control subjects were assessed during the acute stage and after recovery 7 to 19 days later. Both recollection and familiarity were impaired in the acute stage and showed significant, albeit not complete, recovery by the time of the postacute assessment. The patients did, however, show a significant levels-of-processing effect, which was significantly reduced in acute TGA, but not at follow-up. The significant levels-of-processing effect during acute TGA might be linked to recruitment of the prefrontal cortex. (c) 2010 APA, all rights reserved

Electron trap annealing in neutron transmutation doped silicon

DEFF Research Database (Denmark)

Guldberg, J.

1977-01-01

Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five of these anne......Silicon doped by neutron transmutation to 1.2×1014 phosphorus atoms/cm3 was investigated with deep level transient spectroscopy using evaporated Au/n-Si diodes. Seven bulk electron traps were identified which appear after 30 min N2 anneal at temperatures between 425 and 725 °C. Five...

Untitled

Indian Academy of Sciences (India)

ZnSe-GaAs heterostructures by MOVPE 357. Deep levels in heterostructures often act as recombination and/or nonradiative centres and degrade their carrier transport and/or optical properties, We study the nature of deep traps in the HD by means of deep-level transient spectroscopy (DLTS), which provides a very ...

Direct observation and measurements of neutron induced deep levels responsible for N{sub eff} changes in high resistivity silicon detectors using TCT

Energy Technology Data Exchange (ETDEWEB)

Li, Z.; Li, C.J. [Brookhaven National Lab., Upton, NY (United States); Eremin, V.; Verbitskaya, E. [AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.

1996-03-01

Neutron induced deep levels responsible for changes of space charge concentration {ital N{sub eff}} in high resistivity silicon detectors have been observed directly using the transient current technique (TCT). It has been observed by TCT that the absolute value and sign of {ital N{sub eff}} experience changes due to the trapping of non- equilibrium free carriers generated near the surface (about 5 micrometers depth into the silicon) by short wavelength laser pulses in fully depleted detectors. Electron trapping causes {ital N{sub eff}} to change toward negative direction (or more acceptor-like space charges) and hole trapping causes {ital N{sub eff}} to change toward positive direction (or more donor-like space charges). The specific temperature associated with these {ital N{sub eff}} changes are those of the frozen-up temperatures for carrier emission of the corresponding deep levels. The carrier capture cross sections of various deep levels have been measured directly using different free carrier injection schemes. 10 refs., 12 figs., 3 tabs.

Transient spectral hole burning observed on the single-molecule level in terrylene-doped biphenyl

International Nuclear Information System (INIS)

Pärs, M.; Palm, V.; Kikas, J.

2014-01-01

We use the method of fluorescence correlation spectroscopy to analyze the single-molecule (SM) spectroscopy data earlier recorded for a special type of terrylene SM impurity center (referred as “spectrally confined unstable molecule”, SCM) in an incommensurate single crystal of biphenyl. The SCM's SM line seems to be chaotically jumping around within a broad “spectral envelope” and was first considered being subject to a peculiar spectral diffusion behavior. However, our correlation analysis reveals that all the features observed for SCM at 1.8 K are consistent with an assumption that this SM center participates in a process of reversible (transient) spectral hole burning (THB) earlier observed for terrylene-doped polycrystalline biphenyl. No observations of THB processes on SM level have been so far reported for this impurity system, partially due to a low concentration of relevant impurity centers. Another reason making searching for such centers experimentally challenging is an unusual SM line behavior: the photoinduced transition to a metastable “dark state” leads to the SM line saturational broadening, which is much stronger than the triplet broadening. Hence required prolonged observation is often prevented by an SM act of persistent spectral hole burning. - Highlights: • SCM—special type of terrylene single-molecule center in incommensurate biphenyl. • An unusually stable SCM was investigated during several hours at T=1.8 K. • SCM undergoes photoinduced transitions to an unknown metastable “dark state” (DS). • The long DS lifetime causes strong saturational broadening of SCM spectral line. • SCM participates in an earlier observed process of transient hole burning

A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

Energy Technology Data Exchange (ETDEWEB)

Pérez, E.; Dueñas, S.; Castán, H.; García, H.; Bailón, L. [Dept. de Electricidad y Electrónica, Universidad de Valladolid, Paseo de Belén 15, 47011 Valladolid (Spain); Montero, D.; García-Hernansanz, R.; García-Hemme, E.; González-Díaz, G. [Dept. de Física Aplicada III (Electricidad y Electrónica), Univ. Complutense de Madrid, 28040 Madrid (Spain); CEI Campus Moncloa, UCM-UPM, 28040 Madrid (Spain); Olea, J. [CEI Campus Moncloa, UCM-UPM, 28040 Madrid (Spain); Instituto de Energía Solar, E.T.S.I. de Telecomunicación, Univ. Politécnica de Madrid, 28040 Madrid (Spain)

2015-12-28

The energy levels created in supersaturated n-type silicon substrates with titanium implantation in the attempt to create an intermediate band in their band-gap are studied in detail. Two titanium ion implantation doses (10{sup 13 }cm{sup -2} and 10{sup 14 }cm{sup -2}) are studied in this work by conductance transient technique and admittance spectroscopy. Conductance transients have been measured at temperatures of around 100 K. The particular shape of these transients is due to the formation of energy barriers in the conduction band, as a consequence of the band-gap narrowing induced by the high titanium concentration. Moreover, stationary admittance spectroscopy results suggest the existence of different energy level configuration, depending on the local titanium concentration. A continuum energy level band is formed when titanium concentration is over the Mott limit. On the other hand, when titanium concentration is lower than the Mott limit, but much higher than the donor impurity density, a quasi-continuum energy level distribution appears. Finally, a single deep center appears for low titanium concentration. At the n-type substrate, the experimental results obtained by means of thermal admittance spectroscopy at high reverse bias reveal the presence of single levels located at around E{sub c}-425 and E{sub c}-275 meV for implantation doses of 10{sup 13 }cm{sup −2} and 10{sup 14 }cm{sup −2}, respectively. At low reverse bias voltage, quasi-continuously distributed energy levels between the minimum of the conduction bands, E{sub c} and E{sub c}-450 meV, are obtained for both doses. Conductance transients detected at low temperatures reveal that the high impurity concentration induces a band gap narrowing which leads to the formation of a barrier in the conduction band. Besides, the relationship between the activation energy and the capture cross section values of all the energy levels fits very well to the Meyer-Neldel rule. As it is known

Cationic effect on dye-sensitized solar cell properties using electrochemical impedance and transient absorption spectroscopy techniques

International Nuclear Information System (INIS)

Gupta, Ravindra Kumar; Bedja, Idriss

2017-01-01

Redox-couple polymer electrolytes, (poly(ethylene oxide)-succinonitrile) blend/MI-I 2 , where M  =  Li or K, were prepared by the solution cast method. Owing to the plasticizing property of K + ions, the K + ion-based electrolyte exhibited better electrical conductivity than the Li + ion-based electrolyte, which did however exhibit better photovoltaic properties. Electrochemical impedance spectroscopy revealed faster redox species diffusions and interfacial processes in the Li + ion-based dye-sensitized solar cells than in the K + ion-based ones. Transient absorption spectroscopy ascertained faster dye-regeneration by the Li + ion-based electrolyte than the K + ion-based electrolyte. (paper)

The injection spectroscopy method for the study of deep traps in CdTe films

International Nuclear Information System (INIS)

Lyubchak, V.O.; Opanasyuk, A.S.; Tirkusova, N.V.; Kharchenko, V.Yi.

1999-01-01

A simple highly informative method is presented, which enables to precisely identify the mechanism of charge transfer in the investigated structures and to extract a correct information about the parameters of local states in the energy gap band of the material via space-change-limited current-voltage characteristics. The modelling shows a good coincidence of the parameters, reconstructed with the help of this method, of the distribution of traps with the input parameters of deep traps. Some modification of the differential method are tested on high-ohm med CdTe films. Four groups of monoenergetic deep traps are found. The obtained results evidence the perspectives of the injection spectroscopy method for the research of deep traps in semiconducting and dielectric materials

Hemodynamic measurements in deep brain tissues of humans by near-infrared time-resolved spectroscopy

Science.gov (United States)

Suzuki, Hiroaki; Oda, Motoki; Yamaki, Etsuko; Suzuki, Toshihiko; Yamashita, Daisuke; Yoshimoto, Kenji; Homma, Shu; Yamashita, Yutaka

2014-03-01

Using near-infrared time-resolved spectroscopy (TRS), we measured the human head in transmittance mode to obtain the optical properties, tissue oxygenation, and hemodynamics of deep brain tissues in 50 healthy adult volunteers. The right ear canal was irradiated with 3-wavelengths of pulsed light (760, 795, and 835nm), and the photons passing through the human head were collected at the left ear canal. Optical signals with sufficient intensity could be obtained from 46 of the 50 volunteers. By analyzing the temporal profiles based on the photon diffusion theory, we successfully obtained absorption coefficients for each wavelength. The levels of oxygenated hemoglobin (HbO2), deoxygenated hemoglobin (Hb), total hemoglobin (tHb), and tissue oxygen saturation (SO2) were then determined by referring to the hemoglobin spectroscopic data. Compared with the SO2 values for the forehead measurements in reflectance mode, the SO2 values of the transmittance measurements of the human head were approximately 10% lower, and tHb values of the transmittance measurements were always lower than those of the forehead reflectance measurements. Moreover, the level of hemoglobin and the SO2 were strongly correlated between the human head measurements in transmittance mode and the forehead measurements in the reflectance mode, respectively. These results demonstrated a potential application of this TRS system in examining deep brain tissues of humans.

Understanding charge carrier relaxation processes in terbium arsenide nanoparticles using transient absorption spectroscopy

Science.gov (United States)

Vanderhoef, Laura R.

Erbium arsenide nanoparticles epitaxially grown within III-V semiconductors have been shown to improve the performance of devices for applications ranging from thermoelectrics to THz pulse generation. The small size of rare-earth nanoparticles suggests that interesting electronic properties might emerge as a result of both spatial confinement and surface states. However, ErAs nanoparticles do not exhibit any signs of quantum confinement or an emergent bandgap, and these experimental observations are understood from theory. The incorporation of other rare-earth monopnictide nanoparticles into III-V hosts is a likely path to engineering carrier excitation, relaxation and transport dynamics for optoelectronic device applications. However, the electronic structure of these other rare-earth monopnictide nanoparticles remains poorly understood. The objective of this research is to explore the electronic structure and optical properties of III-V materials containing novel rare-earth monopnictides. We use ultrafast pump-probe spectroscopy to investigate the electronic structure of TbAs nanoparticles in III-V hosts. We start with TbAs:GaAs, which was expected to be similar to ErAs:GaAs. We study the dynamics of carrier relaxation into the TbAs states using optical pump terahertz probe transient absorption spectroscopy. By analyzing how the carrier relaxation rates depend on pump fluence and sample temperature, we conclude that the TbAs states are saturable. Saturable traps suggest the existence of a bandgap for TbAs nanoparticles, in sharp contrast with previous results for ErAs. We then apply the same experimental technique to two samples of TbAs nanoparticles in InGaAs with different concentrations of TbAs. We observe similar relaxation dynamics associated with trap saturation, though the ability to resolve these processes is contingent upon a high enough TbAs concentration in the sample. We have also constructed an optical pump optical probe transient absorption

Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms

Energy Technology Data Exchange (ETDEWEB)

Carapezzi, Stefania; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, V.le Berti Pichat 6/2, Bologna (Italy); Irrera, Alessia [IPCF CNR, Viale Stagno D' Alcontres n. 37-98158, Messina, Italy and MATIS IMM CNR, Viale Santa Sofia n. 64, 95123 Catania (Italy)

2014-02-21

The huge amount of knowledge, and infrastructures, brought by silicon (Si) technology, make Si Nanowires (NWs) an ideal choice for nano-electronic Si-based devices. This, in turn, challenges the scientific research to adapt the technical and theoretical paradigms, at the base of established experimental techniques, in order to probe the properties of these systems. Metal-assisted wet-Chemical Etching (MaCE) [1, 2] is a promising fast, easy and cheap method to grow high aspect-ratio aligned Si NWs. Further, contrary to other fabrication methods, this method avoids the possible detrimental effects related to Au diffusion into NWs. We investigated the bandgap level diagram of MaCE Si NW arrays, phosphorous-doped, by means of Deep Level Transient Spectroscopy. The presence of both shallow and deep levels has been detected. The results have been examined in the light of the specificity of the MaCE growth. The study of the electronic levels in Si NWs is, of course, of capital importance in view of the integration of Si NW arrays as active layers in actual devices.

Investigation of γ-irradiation influence on the DLTS spectra in silicon diluted by tellurium

International Nuclear Information System (INIS)

Sultanov, N.A.; Tadzhibaev, M.; Mirzabadalov, Zh

1997-01-01

The influence of gamma-radiation on deep level transient spectroscopy(DLTS) spectra for silicon crystals doped with tellurium was studied. The DLTS spectra have shown that tellurium in silicon formed two deep levels with fixed ionization energy. It was shown that the presence of tellurium prevents the formation of radiation defects

Applications of core level spectroscopy to adsorbates

International Nuclear Information System (INIS)

Nilsson, Anders

2002-01-01

In the following review different applications of core-level spectroscopy to atomic and molecular adsorbates will be shown. Core-holes are created through core-level ionization and X-ray absorption processes and the core-hole decays by radiant and non-radiant processes. This forms the basis for X-ray photoelectron spectroscopy, X-ray absorption spectroscopy, Auger electron spectroscopy and X-ray emission spectroscopy. We will demonstrate how we can use the different methods to obtain information about the chemical state, local geometric structure, nature of chemical bonding and dynamics in electron transfer processes. The adsorption of N 2 and CO on Ni(100) will be used as prototype systems for chemisorption while N 2 on graphite and Ar on Pt for physisorption

Transient Resonance Raman Spectroscopy of a Light-Driven Sodium-Ion-Pump Rhodopsin from Indibacter alkaliphilus.

Science.gov (United States)

Kajimoto, Kousuke; Kikukawa, Takashi; Nakashima, Hiroki; Yamaryo, Haruki; Saito, Yuta; Fujisawa, Tomotsumi; Demura, Makoto; Unno, Masashi

2017-05-04

Sodium-ion-pump rhodopsin (NaR) is a microbial rhodopsin that transports Na + during its photocycle. Here we explore the photocycle mechanism of NaR from Indibacter alkaliphilus with transient absorption and transient resonance Raman spectroscopy. The transient absorption data indicate that the photocycle of NaR is K (545 nm) → L (490 nm)/M (420 nm) → O 1 (590 nm) → O 2 (560 nm) → NaR, where the L and M are formed as equilibrium states. The presence of K, L, M, and O intermediates was confirmed by the resonance Raman spectra with 442 and 532 nm excitation. The main component of the transient resonance Raman spectra was due to L which contains a 13-cis retinal protonated Schiff base. The presence of an enhanced hydrogen out-of-plane band as well as its sensitivity to the H/D exchange indicate that the retinal chromophore is distorted near the Schiff base region in L. Moreover, the retinal Schiff base of the L state forms a hydrogen bond that is stronger than that of the dark state. These observations are consistent with a Na + pumping mechanism that involves a proton transfer from the retinal Schiff base to a key aspartate residue (Asp116 in Krokinobacter eikastus rhodopsin 2) in the L/M states.

Towards a Molecular Movie: Real Time Observation of Hydrogen Bond Breaking by Transient 2D-IR Spectroscopy in a Cyclic Peptide

Science.gov (United States)

Kolano, Christoph; Helbing, Jan; Sander, Wolfram; Hamm, Peter

Transient two-dimensional infrared spectroscopy (T2D-IR) has been used to observe in real time the non-equilibrium structural dynamics of intramolecular hydrogen bond breaking in a small cyclic disulfide-bridged peptide.

Surface-Level Diversity and Decision-Making in Groups: When Does Deep-Level Similarity Help?

OpenAIRE

2006-01-01

Abstract We examined how surface-level diversity (based on race) and deep-level similarities influenced three-person decision-making groups on a hidden-profile task. Surface-level homogeneous groups perceived their information to be less unique and spent less time on the task than surface-level diverse groups. When the groups were given the opportunity to learn about their deep-level similarities prior to t...

Inversion of Qubit Energy Levels in Qubit-Oscillator Circuits in the Deep-Strong-Coupling Regime

Science.gov (United States)

Yoshihara, F.; Fuse, T.; Ao, Z.; Ashhab, S.; Kakuyanagi, K.; Saito, S.; Aoki, T.; Koshino, K.; Semba, K.

2018-05-01

We report on experimentally measured light shifts of superconducting flux qubits deep-strongly coupled to L C oscillators, where the coupling constants are comparable to the qubit and oscillator resonance frequencies. By using two-tone spectroscopy, the energies of the six lowest levels of each circuit are determined. We find huge Lamb shifts that exceed 90% of the bare qubit frequencies and inversions of the qubits' ground and excited states when there are a finite number of photons in the oscillator. Our experimental results agree with theoretical predictions based on the quantum Rabi model.

Dislocation-related trap levels in nitride-based light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Berti Pichat 6/2, Bologna 40127 (Italy); Meneghini, Matteo; Zanoni, Enrico [Department of Information Engineering, University of Padova, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2014-05-26

Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10{sup 9} cm{sup −2} and a low dislocation density of 3 × 10{sup 8} cm{sup −2}. Three trapping levels for electrons were revealed, named A, A1, and B, with energies E{sub A} ≈ 0.04 eV, E{sub A1} ≈ 0.13 eV, and E{sub B} ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

Dislocation-related trap levels in nitride-based light emitting diodes

International Nuclear Information System (INIS)

Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna; Meneghini, Matteo; Zanoni, Enrico; Zhu, Dandan; Humphreys, Colin

2014-01-01

Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10 9 cm −2 and a low dislocation density of 3 × 10 8 cm −2 . Three trapping levels for electrons were revealed, named A, A1, and B, with energies E A  ≈ 0.04 eV, E A1  ≈ 0.13 eV, and E B  ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

A transient absorption study of allophycocyanin

Indian Academy of Sciences (India)

Transient dynamics of allophycocyanin trimers and monomers are observed by using the pump-probe, transient absorption technique. The origin of spectral components of the transient absorption spectra is discussed in terms of both kinetics and spectroscopy. We find that the energy gap between the ground and excited ...

Deep Ocean Contribution to Sea Level Rise

Science.gov (United States)

Chang, L.; Sun, W.; Tang, H.; Wang, Q.

2017-12-01

The ocean temperature and salinity change in the upper 2000m can be detected by Argo floats, so we can know the steric height change of the ocean. But the ocean layers above 2000m represent only 50% of the total ocean volume. Although the temperature and salinity change are small compared to the upper ocean, the deep ocean contribution to sea level might be significant because of its large volume. There has been some research on the deep ocean rely on the very sparse situ observation and are limited to decadal and longer-term rates of change. The available observational data in the deep ocean are too spares to determine the temporal variability, and the long-term changes may have a bias. We will use the Argo date and combine the situ data and topographic data to estimate the temperature and salinity of the sea water below 2000m, so we can obtain a monthly data. We will analyze the seasonal and annual change of the steric height change due to the deep ocean between 2005 and 2016. And we will evaluate the result combination the present-day satellite and in situ observing systems. The deep ocean contribution can be inferred indirectly as the difference between the altimetry minus GRACE and Argo-based steric sea level.

In vivo measurements of cerebral metabolic abnormalities by proton spectroscopy after a transient ischemic attack revealing an internal carotid stenosis > 70%; Anomalies metaboliques cerebrales mesurees in vivo par la spectroscopie du proton dans les accidents ischemiques transitoires revelant une stenose de la carotide interne superieure a 70%

Energy Technology Data Exchange (ETDEWEB)

Giroud, M.; Becker, F.; Lemesle, M.; Walker, P.; Guy, F.; Martin, D.; Baudouin, N.; Brunotte, F.; Dumas, R. [Centre Hospitalier Universitaire, 21 -Dijon (France)

1996-06-01

Aims: The aim of this work is to look for cerebral metabolic abnormalities within the first 3 days after a transient ischemic attack revealing an internal carotid stenosis > 70 %. Methods: Five patients with a transient ischemic attack lasting between 30 and 180 minutes, affecting sensory and motor brachio-facial territory, with or without aphasia. Were studied. A CT-scan, an EEG, a cervical Doppler ultrasound, a standard arteriography, a magnetic resonance imaging and a proton spectroscopy were performed within the cerebral area affected by the transient ischemic attack. We measured 2 markers: N-acetyl-aspartate, the marker of the neuronal mass, and lactate, the marker of anaerobe metabolism. In each case, a contralateral internal stenosis was diagnosed by cervical Doppler ultrasound and standard arteriography. No cerebral infarction was observed. Results: With the affected cerebral area defined according to clinical and EEG features, proton spectroscopy showed a significant rise of lactate, without any change in N-acetyl-aspartate levels. Conclusions: Within the first 3 days after a transient ischemic attack, there is a significant risk of lactate inside the affected cerebral area. This change may reflect a localized and transient hypoperfusion, but long enough to induce a rise of lactate but not sufficient to produce a cerebral infarct. This area is probably at risk to induce cerebral infarct. This data lead us to study the metabolic change induced by the asymptomatic internal carotid stenosis. (authors). 18 refs.

Identification of deep trap energies and influences of oxygen plasma ashing on semiconductor carrier lifetime

International Nuclear Information System (INIS)

Koprowski, A; Humbel, O; Plappert, M; Krenn, H

2015-01-01

We have performed an analytical study of the effects of oxygen plasma ashing processes in semiconductor device fabrication and its impact on minority carrier lifetime in high voltage semiconductor devices. Our work includes a critical background study of life time killing mechanisms by deep traps imparted into the semiconductor by barrel plasma ashing. The Elymat technique provides the opportunity to measure lifetime and diffusion length of minority carriers and surface photo voltage (SPV) measurement was used to analyse influences of process parameters such as photoresist, time budget and positioning in the process chamber. It was shown that in microwave plasma processes the diffusion length changes severely with tempering at 200 °C, whereas RF-plasma processes show a significant process time-dependence. Batch tools in general suffer from a strong first wafer effect which could be correlated with the static electrical parameters of the semiconductor devices. The trap identities were detected by using deep level transient spectroscopy and the chemical species of the traps has been proven by inductive coupled plasma mass spectrometry. The deep-bandgap trap energies are reliable fingerprints of the chosen process parameters such as process time and of resist-influences. By microwave plasma processes intrinsic Fe and FeB-complex levels were identified and a good agreement with the SPV-measurement and electrical device characteristic was shown. RF-plasma processes impart levels attributed to Pt levels and an additional level, which could be identified as a trap level probably forming a complex of Pt and H. (paper)

Prominent deep medullary veins: a predictive biomarker for stroke risk from transient ischemic attack?

Science.gov (United States)

Duan, Yang; Xu, Zhihua; Li, Hongyi; Cai, Xiaonan; Chang, Cancan; Yang, Benqiang

2018-05-01

Background Deep medullary veins (DMVs) are a biomarker of severity and prognosis in patients with acute cerebral infarction. However, their clinical significance remains unclear in patients with transient ischemic attack (TIA). Purpose To determine whether prominent deep medullary veins (PDMVs) are a predictive biomarker for stroke risk after TIA. Material and Methods Clinical and imaging data of 49 patients with TIA and 49 sex- and age-matched controls were studied. PDMVs were defined as DMVs with a score of 3 (TDMVs) or asymmetric DMVs (ADMVs), and the relationship between PDMVs and clinical features was analyzed. The DMV score based on susceptibility weighted imaging (SWI) ranged from 0 (not visible) to 3 (very prominent) and was calculated for both hemispheres separately. A different score in each hemisphere was defined as ADMVs and an equal score was defined as symmetric DMVs. The asymmetry and score of DMVs were compared between the two groups and with respect to the time from TIA onset to imaging analysis. Results Agreement between neuroradiologists for the DMV asymmetry/score on SWI was excellent. The frequency of ADMVs and TDMVs was significantly higher in patients with TIA than controls ( P  0.05); PDMVs were not correlated with age, blood pressure, or diabetes. However, PDMVs were associated with the ABCD2 score (≥4), clinical symptoms, and duration of TIA (≥10 min). Conclusion Prominent deep medullary veins is a predictive biomarker for the risk of stroke in many patients having suffered from TIA.

Photo-induced current transient spectroscopy for high-resistivity neutron-transmutation-doped silicon

International Nuclear Information System (INIS)

Tokuda, Yutaka; Inoue, Yajiro; Usami, Akira

1987-01-01

Defects in high-resistivity neutron-transmutation-doped (NTD) silicon prior to annealing were studied by photo-induced current transient spectroscopy (PICTS). The thermal-neutron fluence was 9.5 x 10 17 cm -2 to give a resistivity of about 30 Ω after annealing, and the fast-neutron fluence was 9.5 x 10 16 cm -2 . Four traps with thermal emission activation energies of 0.15, 0.41. 0.47 and 0.50 eV were observed in NTD silicon. A trap with the thermal emission activation energy of 0.15 eV was considered to correspond to the divacancy. Although the clustered nature of the defects was observed, PICTS measurements suggest that the material state of high-resistivity NTD silicon is still crystalline and not amorphous. (author)

Autobalanced Ramsey Spectroscopy

Science.gov (United States)

Sanner, Christian; Huntemann, Nils; Lange, Richard; Tamm, Christian; Peik, Ekkehard

2018-01-01

We devise a perturbation-immune version of Ramsey's method of separated oscillatory fields. Spectroscopy of an atomic clock transition without compromising the clock's accuracy is accomplished by actively balancing the spectroscopic responses from phase-congruent Ramsey probe cycles of unequal durations. Our simple and universal approach eliminates a wide variety of interrogation-induced line shifts often encountered in high precision spectroscopy, among them, in particular, light shifts, phase chirps, and transient Zeeman shifts. We experimentally demonstrate autobalanced Ramsey spectroscopy on the light shift prone Yb+ 171 electric octupole optical clock transition and show that interrogation defects are not turned into clock errors. This opens up frequency accuracy perspectives below the 10-18 level for the Yb+ system and for other types of optical clocks.

Effect of antimony on the deep-level traps in GaInNAsSb thin films

Energy Technology Data Exchange (ETDEWEB)

Islam, Muhammad Monirul, E-mail: islam.monir.ke@u.tsukuba.ac.jp; Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro ku, Tokyo 153-8904 (Japan); Sakurai, Takeaki; Akimoto, Katsuhiro [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)

2014-09-15

Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41 eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

Reconciling the sea level record of the last deglaciation with the δ18O spectra from deep sea cores

International Nuclear Information System (INIS)

Bard, Edouard; Columbia Univ., Palisades, NY; Arnold, Maurice; Duplessy, J.-C.

1991-01-01

In this paper we use the oxygen isotope record as a transient tracer to study palaeoceanography during the last deglaciation. By using 14 C and 18 O data obtained on four deep sea sediment cores, we show the presence of a measurable lag between the deglacial δ 18 O signal observed in the deep Atlantic and the deep Indo-Pacific oceans. Our study confirms that the major meltwater discharge occurred via the North Atlantic and that the thermohaline circulation was operating during the deglacial transition. (Author)

Deep level centers in electron-irradiated silicon crystals doped with copper at different temperatures

Energy Technology Data Exchange (ETDEWEB)

Yarykin, Nikolai [Institute of Microelectronics Technology, RAS, Chernogolovka (Russian Federation); Weber, Joerg [Technische Universitaet Dresden (Germany)

2017-07-15

The effect of bombardment with energetic particles on the deep-level spectrum of copper-contaminated silicon wafers is studied by space charge spectroscopy methods. The p-type FZ-Si wafers were doped with copper in the temperature range of 645-750 C and then irradiated with the 10{sup 15} cm{sup -2} fluence of 5 MeV electrons at room temperature. Only the mobile Cu{sub i} species and the Cu{sub PL} centers are detected in significant concentrations in the non-irradiated Cu-doped wafers. The properties of the irradiated samples are found to qualitatively depend on the copper in-diffusion temperature T{sub diff}. For T{sub diff} > 700 C, the irradiation partially reduces the Cu{sub i} concentration and introduces additional Cu{sub PL} centers while no standard radiation defects are detected. If T{sub diff} was below ∝700 C, the irradiation totally removes the mobile Cu{sub i} species. Instead, the standard radiation defects and their complexes with copper appear in the deep-level spectrum. A model for the defects reaction scheme during the irradiation is derived and discussed. DLTS spectrum of the Cu-contaminated and then irradiated silicon qualitatively depends on the copper in-diffusion temperature. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Laser techniques for spectroscopy of core-excited atomic levels

Science.gov (United States)

Harris, S. E.; Young, J. F.; Falcone, R. W.; Rothenberg, J. E.; Willison, J. R.

1982-01-01

We discuss three techniques which allow the use of tunable lasers for high resolution and picosecond time scale spectroscopy of core-excited atomic levels. These are: anti-Stokes absorption spectroscopy, laser induced emission from metastable levels, and laser designation of selected core-excited levels.

A Q-switched Ho:YAG laser assisted nanosecond time-resolved T-jump transient mid-IR absorbance spectroscopy with high sensitivity

Energy Technology Data Exchange (ETDEWEB)

Li, Deyong; Li, Yunliang; Li, Hao; Weng, Yuxiang, E-mail: yxweng@iphy.ac.cn [Key Laboratory of Soft Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wu, Xianyou [Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031 (China); Yu, Qingxu [School of Physics and Optoelectronic Technology, Dalian University of Technology, No. 2, Linggong Road, Dalian 116023 (China)

2015-05-15

Knowledge of dynamical structure of protein is an important clue to understand its biological function in vivo. Temperature-jump (T-jump) time-resolved transient mid-IR absorbance spectroscopy is a powerful tool in elucidating the protein dynamical structures and the folding/unfolding kinetics of proteins in solution. A home-built setup of T-jump time-resolved transient mid-IR absorbance spectroscopy with high sensitivity is developed, which is composed of a Q-switched Cr, Tm, Ho:YAG laser with an output wavelength at 2.09 μm as the T-jump heating source, and a continuous working CO laser tunable from 1580 to 1980 cm{sup −1} as the IR probe. The results demonstrate that this system has a sensitivity of 1 × 10{sup −4} ΔOD for a single wavelength detection, and 2 × 10{sup −4} ΔOD for spectral detection in amide I′ region, as well as a temporal resolution of 20 ns. Moreover, the data quality coming from the CO laser is comparable to the one using the commercial quantum cascade laser.

Demonstrate use of capillary electrophoresis low level transient of anions

International Nuclear Information System (INIS)

Moum, Kari-Lye; Solheim, Torill; McElrath, Joel; Frattini, Paul

2012-09-01

Capillary Electrophoresis (CE) is a well-known analytical method capable of rapid detection of very low concentration of cations and anionic species such as chloride, sulfate and nitrate. These anions are of crucial importance in reducing the potential of stainless steel components to undergo stress corrosion cracking. Currently, Nuclear Power Plants (NPPs) use Ion Chromatography (IC) as the analytical technique to achieve the required detection levels of ionic species. At the Halden Reactor Project (HRP) IC was replaced by CE in 1996, and since then HRP has gained nearly 20 years of operational experience. During the last 15 years, EPRI has done research on the CE technique and has achieved extensive experience in this area. EPRI has demonstrated detection levels at ppt and sub-ppb levels. This paper presents the ability of the CE technique to follow low level transients of anions in Boiling Water Reactor (BWR) coolant. A transient caused by approx. 10 ppb chloride and sulfate was simulated in an experimental circuit simulating BWR conditions. A series of grab samples were taken and analysed using HRPs CE (Agilent G1600). (authors)

Formation of copper precipitates in silicon

Science.gov (United States)

Flink, Christoph; Feick, Henning; McHugo, Scott A.; Mohammed, Amna; Seifert, Winfried; Hieslmair, Henry; Heiser, Thomas; Istratov, Andrei A.; Weber, Eicke R.

1999-12-01

The formation of copper precipitates in silicon was studied after high-temperature intentional contamination of p- and n-type FZ and Cz-grown silicon and quench to room temperature. With the Transient Ion Drift (TID) technique on p-type silicon a critical Fermi level position at EC-0.2 eV was found. Only if the Fermi level position, which is determined by the concentrations of the acceptors and the copper donors, surpasses this critical value precipitation takes place. If the Fermi level is below this level the supersaturated interstitial copper diffuses out. An electrostatic precipitation model is introduced that correlates the observed precipitation behavior with the electrical activity of the copper precipitates as detected with Deep Level Transient Spectroscopy (DLTS) on n-type and with Minority Carrier Transient Spectroscopy (MCTS) on p-type silicon.

Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition

Science.gov (United States)

Barbagiovanni, E. G.; Strano, V.; Franzò, G.; Crupi, I.; Mirabella, S.

2015-03-01

Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (Vo) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two Vo states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient, indicating a clear role of atmospheric O2 on the surface defect states. A model for surface defect transient behaviour due to band bending with respect to the Fermi level is proposed. The results have implications for a variety of sensing and photovoltaic applications of ZnO NRs.

Damage related deep electron levels in ion implanted GaAs

International Nuclear Information System (INIS)

Allsopp, D.W.E.; Peaker, A.R.

1986-01-01

A study has been made of the deep electron levels in semi-insulating GaAs implanted with either 78 Se + or 29 Si + ions and rendered n-type by subsequent annealing without encapsulation in partial pressures of arsenic or arsine. Three implantation related deep states were detected with concentration profiles approximating to the type of Gaussian distributions expected for point defects related to ion implantation damage. Further heat treatment of the samples at 500 0 C in a gas ambient of U 2 /H 2 substantially reduced concentration of these deep levels. Two of these states were thought to be related to displacements of the substrate atoms. The third, at Esubc -0.67 eV, was found in only 78 Se + ion implanted GaAs substrates and was thought to be a defect involving both Se and As atoms, rather than intrinsic lattice disorder. It is proposed that the annealing rate of these implantation related deep levels depends crucially on the in-diffusion of arsenic vacancies during heat treatments. (author)

Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

Science.gov (United States)

Golovynskyi, S.; Datsenko, O.; Seravalli, L.; Kozak, O.; Trevisi, G.; Frigeri, P.; Babichuk, I. S.; Golovynska, I.; Qu, Junle

2017-12-01

Deep levels in metamorphic InAs/In x Ga1-x As quantum dot (QD) structures are studied with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and photoluminescence (PL) spectroscopy and compared with data from pseudomorphic InGaAs/GaAs QDs investigated previously by the same techniques. We have found that for a low content of indium (x = 0.15) the trap density in the plane of self-assembled QDs is comparable or less than the one for InGaAs/GaAs QDs. However, the trap density increases with x, resulting in a rise of the defect photoresponse in PC and TSC spectra as well as a reduction of the QD PL intensity. The activation energies of the deep levels and some traps correspond to known defect complexes EL2, EL6, EL7, EL9, and EL10 inherent in GaAs, and three traps are attributed to the extended defects, located in InGaAs embedding layers. The rest of them have been found as concentrated mainly close to QDs, as their density in the deeper InGaAs buffers is much lower. This an important result for the development of light-emitting and light-sensitive devices based on metamorphic InAs QDs, as it is a strong indication that the defect density is not higher than in pseudomorphic InAs QDs.

Identities of the deep level defects E1/E2 in 6H silicon carbide

International Nuclear Information System (INIS)

Ling, C.C.; Chen, X.D.; Beling, C.D.; Fung, S.; Lam, T.W.; Lam, C.H.; Gong, M.; Weng, H.M.; Hang, D.S.

2004-01-01

E 1 /E 2 (E C -0.36/0.44 eV) are deep level donors generally found in ion-implanted, electron and neutron irradiated n-type 6H-SiC materials. Their configurations are controversial and have been related to a negatively charged carbon vacancy, a divacancy or a V Si -complex. With positron lifetime technique, we have identified V Si and V C V Si in the Lely grown n-type 6H-SiC sample, with V Si annealed out at 650 C. Concentration of V C V Si persists at 1400 C annealing and significantly decreased after the 1600 C annealing. Considering the deep level transient spectroscopic (DLTS) results on the neutron irradiated n-type SiC epi sample that E 1 /E 2 completely disappeared after the 1400 C annealing, E 1 /E 2 is not the V C V Si defect. With positron annihilation techniques, A. A. Rempel et al (2002) have shown the energy dependence of vacancy generated by electron irradiation. With low irradiation energy of 0.3MeV, only V C was generated and at higher energy (0.5MeV), Si vacancy was detected. With focus to find the minimum energy for generating E 1 /E 2 , we have performed DLTS studies on n-type epi 6H-SiC materials irradiated by electrons with varying energies. Our results suggest that E 1 /E 2 have microstructure related to a carbon vacancy or a carbon interstitial. (orig.)

Self Referencing Heterodyne Transient Grating Spectroscopy with Short Wavelength

Directory of Open Access Journals (Sweden)

Jakob Grilj

2015-04-01

Full Text Available Heterodyning by a phase stable reference electric field is a well known technique to amplify weak nonlinear signals. For short wavelength, the generation of a reference field in front of the sample is challenging because of a lack of suitable beamsplitters. Here, we use a permanent grating which matches the line spacing of the transient grating for the creation of a phase stable reference field. The relative phase among the two can be changed by a relative translation of the permanent and transient gratings in direction orthogonal to the grating lines. We demonstrate the technique for a transient grating on a VO2 thin film and observe constructive as well as destructive interference signals.

Gamma-ray spectroscopy of the neutron-rich Ni region through heavy-ion deep-inelastic collisions

International Nuclear Information System (INIS)

Ishii, T.; Asai, M.; Matsuda, M.; Ichikawa, S.; Makishima, A.; Hossain, I.; Kleinheinz, P.; Ogawa, M.

2002-01-01

Nuclei in the neutron-rich Ni region have been studied by γ-ray spectroscopy. Gamma-rays emitted from isomers, with T 1/2 >1 ns, produced in heavy-ion deep-inelastic collisions were measured with an isomer-scope. The nuclear structure of the doubly magic 68 Ni and its neighbor 69,71 Cu is discussed on the basis of the shell model. Future experiments for more neutron-rich Ni nuclei are also viewed. (orig.)

Gamma-ray spectroscopy of the neutron-rich Ni region through heavy-ion deep-inelastic collisions

Science.gov (United States)

Ishii, T.; Asai, M.; Makishima, A.; Hossain, I.; Kleinheinz, P.; Ogawa, M.; Matsuda, M.; Ichikawa, S.

Nuclei in the neutron-rich Ni region have been studied by γ-ray spectroscopy. Gamma-rays emitted from isomers, with T1/2 > 1 ns, produced in heavy-ion deep-inelastic collisions were measured with an isomer-scope. The nuclear structure of the doubly magic 68Ni and its neighbor 69,71Cu is discussed on the basis of the shell model. Future experiments for more neutron-rich Ni nuclei are also viewed.

Decadal trends in deep ocean salinity and regional effects on steric sea level

Science.gov (United States)

Purkey, S. G.; Llovel, W.

2017-12-01

We present deep (below 2000 m) and abyssal (below 4000 m) global ocean salinity trends from the 1990s through the 2010s and assess the role of deep salinity in local and global sea level budgets. Deep salinity trends are assessed using all deep basins with available full-depth, high-quality hydrographic section data that have been occupied two or more times since the 1980s through either the World Ocean Circulation Experiment (WOCE) Hydrographic Program or the Global Ship-Based Hydrographic Investigations Program (GO-SHIP). All salinity data is calibrated to standard seawater and any intercruise offsets applied. While the global mean deep halosteric contribution to sea level rise is close to zero (-0.017 +/- 0.023 mm/yr below 4000 m), there is a large regional variability with the southern deep basins becoming fresher and northern deep basins becoming more saline. This meridional gradient in the deep salinity trend reflects different mechanisms driving the deep salinity variability. The deep Southern Ocean is freshening owing to a recent increased flux of freshwater to the deep ocean. Outside of the Southern Ocean, the deep salinity and temperature changes are tied to isopycnal heave associated with a falling of deep isopycnals in recent decades. Therefore, regions of the ocean with a deep salinity minimum are experiencing both a halosteric contraction with a thermosteric expansion. While the thermosteric expansion is larger in most cases, in some regions the halosteric compensates for as much as 50% of the deep thermal expansion, making a significant contribution to local sea level rise budgets.

Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Gür, Emre; Tabares, G.; Hierro, A.; Arehart, A.; Ringel, S. A.; Chauveau, J. M.

2012-01-01

Deep level defects in n-type unintentionally doped a-plane Mg x Zn 1−x O, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of Mg x Zn 1−x O were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of E c − 1.4 eV, 2.1 eV, 2.6 V, and E v + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at E c − 2.1 eV, E v + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at E v + 0.3 eV and E c − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the E v + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the E c − 1.4 eV and E c − 2.6 eV levels in Mg alloyed samples.

The Deep-Level-Reasoning-Question Effect: The Role of Dialogue and Deep-Level-Reasoning Questions during Vicarious Learning

Science.gov (United States)

Craig, Scotty D.; Sullins, Jeremiah; Witherspoon, Amy; Gholson, Barry

2006-01-01

We investigated the impact of dialogue and deep-level-reasoning questions on vicarious learning in 2 studies with undergraduates. In Experiment 1, participants learned material by interacting with AutoTutor or by viewing 1 of 4 vicarious learning conditions: a noninteractive recorded version of the AutoTutor dialogues, a dialogue with a…

UNSUPERVISED TRANSIENT LIGHT CURVE ANALYSIS VIA HIERARCHICAL BAYESIAN INFERENCE

International Nuclear Information System (INIS)

Sanders, N. E.; Soderberg, A. M.; Betancourt, M.

2015-01-01

Historically, light curve studies of supernovae (SNe) and other transient classes have focused on individual objects with copious and high signal-to-noise observations. In the nascent era of wide field transient searches, objects with detailed observations are decreasing as a fraction of the overall known SN population, and this strategy sacrifices the majority of the information contained in the data about the underlying population of transients. A population level modeling approach, simultaneously fitting all available observations of objects in a transient sub-class of interest, fully mines the data to infer the properties of the population and avoids certain systematic biases. We present a novel hierarchical Bayesian statistical model for population level modeling of transient light curves, and discuss its implementation using an efficient Hamiltonian Monte Carlo technique. As a test case, we apply this model to the Type IIP SN sample from the Pan-STARRS1 Medium Deep Survey, consisting of 18,837 photometric observations of 76 SNe, corresponding to a joint posterior distribution with 9176 parameters under our model. Our hierarchical model fits provide improved constraints on light curve parameters relevant to the physical properties of their progenitor stars relative to modeling individual light curves alone. Moreover, we directly evaluate the probability for occurrence rates of unseen light curve characteristics from the model hyperparameters, addressing observational biases in survey methodology. We view this modeling framework as an unsupervised machine learning technique with the ability to maximize scientific returns from data to be collected by future wide field transient searches like LSST

UNSUPERVISED TRANSIENT LIGHT CURVE ANALYSIS VIA HIERARCHICAL BAYESIAN INFERENCE

Energy Technology Data Exchange (ETDEWEB)

Sanders, N. E.; Soderberg, A. M. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Betancourt, M., E-mail: nsanders@cfa.harvard.edu [Department of Statistics, University of Warwick, Coventry CV4 7AL (United Kingdom)

2015-02-10

Historically, light curve studies of supernovae (SNe) and other transient classes have focused on individual objects with copious and high signal-to-noise observations. In the nascent era of wide field transient searches, objects with detailed observations are decreasing as a fraction of the overall known SN population, and this strategy sacrifices the majority of the information contained in the data about the underlying population of transients. A population level modeling approach, simultaneously fitting all available observations of objects in a transient sub-class of interest, fully mines the data to infer the properties of the population and avoids certain systematic biases. We present a novel hierarchical Bayesian statistical model for population level modeling of transient light curves, and discuss its implementation using an efficient Hamiltonian Monte Carlo technique. As a test case, we apply this model to the Type IIP SN sample from the Pan-STARRS1 Medium Deep Survey, consisting of 18,837 photometric observations of 76 SNe, corresponding to a joint posterior distribution with 9176 parameters under our model. Our hierarchical model fits provide improved constraints on light curve parameters relevant to the physical properties of their progenitor stars relative to modeling individual light curves alone. Moreover, we directly evaluate the probability for occurrence rates of unseen light curve characteristics from the model hyperparameters, addressing observational biases in survey methodology. We view this modeling framework as an unsupervised machine learning technique with the ability to maximize scientific returns from data to be collected by future wide field transient searches like LSST.

Deep millimeter spectroscopy observations toward NGC 1068

Science.gov (United States)

Qiu, Jianjie; Wang, Junzhi; Shi, Yong; Zhang, Jiangshui; Fang, Min; Li, Fei

2018-05-01

Aims: We aim for a better understanding of gas properties in the circum-nuclear disk (CND) region of the nearby gas-rich Seyfert 2 galaxy NGC 1068. We focus on line identification and the basic physical parameters estimation of molecular gas in the CND region. Methods: We used the IRAM 30 m telescope to conduct deep millimeter spectroscopy observations toward the center of NGC 1068. Results: Thirty-two lines were detected in this galaxy, 15 lines of wich were detected for the first time. With a sensitivity better by about a factor of 4 than observations in the literature for this source at 3 mm band, we detected several weak lines for the first time in this source, such as lines from CH3CCH, CH3OCH3, and HC18O+. Column densities of these molecules were estimated based on line emissions. Some marginal detections in the literature, such as HN13C (1-0), were confirmed. CH3OCH3 was detected for the first time in external galaxies. Lines from several carbon chain molecules and shock-related molecules were also detected in this source. The reduced spectrum (FITS file) is only available at the CDS via anonymous ftp to cdsarc.u-strasbg.fr (130.79.128.5) or via http://cdsarc.u-strasbg.fr/viz-bin/qcat?J/A+A/613/A3

A study on multiple defect states in low-carbon doped GaN layers and its correlation with AlGaN/GaN high electron mobility transistor operation

International Nuclear Information System (INIS)

Tanaka, Takeshi; Shiojima, Kenji; Otoki, Yohei; Tokuda, Yutaka

2014-01-01

A study on defect states in relatively low-carbon doped GaN is presented. A large current collapse was observed in AlGaN/GaN high electron mobility transistor (HEMT) operation when the device channel was doped with carbon of 1 × 10 17 cm −3 . Deep level transient spectroscopy measurements showed a positive and even negative correlation between the densities of carbon and those of shallow trap states. Along with their small concentrations, shallow traps could not be associated with the collapse of the HEMT. Photo capacitance measurements yielded large signal at very deep levels of 1.6 and 2.4 eV in carbon doped GaN. Especially, the 2.4 eV deep trap was estimated to be acceptor type and related to some indirect states that the minority carrier transient spectroscopy could not characterize. A 20% of doped carbon was allocated to the very deep traps, and the large current collapse was attributed to these carbon-related states. - Highlights: • Systematic study on role of carbon in AlGaN/GaN HEMT structures was attempted. • Large current collapse was observed at HEMT operation in carbon doped channel. • Photo capacitance measurements yielded large signal at very deep levels. • The large current degradation was attributed to the carbon-related deep traps

Image-based deep learning for classification of noise transients in gravitational wave detectors

Science.gov (United States)

Razzano, Massimiliano; Cuoco, Elena

2018-05-01

The detection of gravitational waves has inaugurated the era of gravitational astronomy and opened new avenues for the multimessenger study of cosmic sources. Thanks to their sensitivity, the Advanced LIGO and Advanced Virgo interferometers will probe a much larger volume of space and expand the capability of discovering new gravitational wave emitters. The characterization of these detectors is a primary task in order to recognize the main sources of noise and optimize the sensitivity of interferometers. Glitches are transient noise events that can impact the data quality of the interferometers and their classification is an important task for detector characterization. Deep learning techniques are a promising tool for the recognition and classification of glitches. We present a classification pipeline that exploits convolutional neural networks to classify glitches starting from their time-frequency evolution represented as images. We evaluated the classification accuracy on simulated glitches, showing that the proposed algorithm can automatically classify glitches on very fast timescales and with high accuracy, thus providing a promising tool for online detector characterization.

Electrically active sodium-related defect centres in silicon

DEFF Research Database (Denmark)

Dahl, Espen; Madsbøll, J.; Søiland, A.-K.

2013-01-01

Electrically active defect centres related to sodium in silicon have been examined with deep level transient spectroscopy, and their recombination potential analysed with the microwave photoconductive decay technique. In order to investigate the entire silicon band gap for defect centres, both p-...

Using Deep UV Raman Spectroscopy to Identify In Situ Microbial Activity

Science.gov (United States)

Sapers, H. M.; Wanger, G.; Amend, J.; Orphan, V. J.; Bhartia, R.

2017-12-01

Microbial communities living in close association with lithic substrates play a critical role in biogeochemical cycles. Understanding the interactions between microorganisms and their abiotic substrates requires knowledge of microbial activity. Identifying active cells adhered to complex environmental substrates, especially in low biomass systems, remains a challenge. Stable isotope probing (SIP) provides a means to trace microbial activity in environmental systems. Active members of the community take up labeled substrates and incorporate the labels into biomolecules that can be detected through downstream analyses. Here we show for the first time that Deep UV (248 nm) Raman spectroscopy can differentiate microbial cells labeled with stable isotopes. Previous studies have used Raman spectroscopy with a 532 nm source to identify active bacterial cells by measuring a Raman shift between peaks corresponding to amino acids incorporating 13C compared to controls. However, excitation at 532 nm precludes detection on complex substrates due to high autofluorescence of native minerals. Excitation in the DUV range offers non-destructive imaging on mineral surfaces - retaining critical contextual information. We prepared cultures of E. coli grown in 50 atom% 13C glucose spotted onto Al wafers to test the ability of DUV Raman spectroscopy to differentiate labeled and unlabeled cells. For the first time, we are able to demonstrate a distinct and repeatable shift between cells grown in labeled media and unlabeled media when imaged on Al wafers with DUV Raman spectroscopy. The Raman spectra are dominated by the characteristic Raman bands of guanine. The dominant marker peak for guanine attributed to N7-C8 and C8-N9 ring stretching and C8-H in-plane bending, is visible at 1480 cm-1 in the unlabeled cells and is blue-shifted by 20 wavenumbers to 1461 cm-1 in the labeled cells. The ability of DUV Raman to effectively identify regions containing cells that have incorporated isotopic

Change in CNE boiler control level and stepback to overcome strong grid transients

International Nuclear Information System (INIS)

Lorenzetti, J.; Sablic, J.C.

1991-01-01

In Argentina the grid distribution is organized in such a way that the Embalse Power Plant is located in a place where power is produced. The most important places of power consumption are located near Buenos Aires city. Just one line connects Embalse with the consumption places. As a result of that condition the power is flowing through the interconnection line in such a way that every time a disturb cuts the line a strong power transient affects the Nuclear Power Plant. The changes in the boiler level control were done in order to avoid reactor trip, reactor stepback or turbine trip based on boiler level upsets. After several years of operation it was possible to verify that the new algorithm reduces the chances of plant outage increasing the confidence in the plant to overcome with success such transient. Every transient in the plant is analyzed in order to improve the control algorithm

Transient photoconductivity in amorphous semiconductors

International Nuclear Information System (INIS)

Mpawenayo, P.

1997-07-01

Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

Use of interfacial layers to prolong hole lifetimes in hematite probed by ultrafast transient absorption spectroscopy

Science.gov (United States)

Paradzah, Alexander T.; Diale, Mmantsae; Maabong, Kelebogile; Krüger, Tjaart P. J.

2018-04-01

Hematite is a widely investigated material for applications in solar water oxidation due primarily to its small bandgap. However, full realization of the material continues to be hampered by fast electron-hole recombination rates among other weaknesses such as low hole mobility, short hole diffusion length and low conductivity. To address the problem of fast electron-hole recombination, researchers have resorted to growth of nano-structured hematite, doping and use of under-layers. Under-layer materials enhance the photo-current by minimising electron-hole recombination through suppressing of back electron flow from the substrate, such as fluorine-doped tin oxide (FTO), to hematite. We have carried out ultrafast transient absorption spectroscopy on hematite in which Nb2O5 and SnO2 materials were used as interfacial layers to enhance hole lifetimes. The transient absorption data was fit with four different lifetimes ranging from a few hundred femtoseconds to a few nanoseconds. We show that the electron-hole recombination is slower in samples where interfacial layers are used than in pristine hematite. We also develop a model through target analysis to illustrate the effect of under-layers on electron-hole recombination rates in hematite thin films.

Ultrafast Transient Absorption Spectroscopy of Polymer-Based Organophotoredox Catalysts Mimicking Transition-Metal Complexes

Science.gov (United States)

Jamhawi, Abdelqader; Paul, Anam C.; Smith, Justin D.; Handa, Sachin; Liu, Jinjun

2017-06-01

Transition-metal complexes of rare earth metals including ruthenium and iridium are most commonly employed as visible-light photocatalysts. Despite their highly important and broad applications, they have many disadvantages including high cost associated with low abundance in earth crust, potential toxicity, requirement of specialized ligands for desired activity, and difficulty in recycling of metal contents as well as associated ligands. Polymer-based organophotoredox catalysts are promising alternatives and possess unique advantages such as easier synthesis from inexpensive starting material, longer excited state life time, broad range of activity, sustainability, and recyclability. In this research talk, time-resolved photoluminescence and femtosecond transient absorption (TA) spectroscopy measurements of three novel polymer-based organophotoredox catalysts will be presented. By our synthetic team, their catalytic activity has been proven in some highly valuable chemical transformations, that otherwise require transition metal complexes. Time-resolved spectroscopic investigations have demonstrated that photoinduced processes in these catalysts are similar to the transition metal complexes. Especially, intramolecular vibrational relaxation, internal conversion, and intersystem crossing from the S1 state to the T1 state all occur on a sub-picosecond timescale. The long lifetime of the T1 state ( 2-3 microsecond) renders these polymers potent oxidizing and reducing agents. A spectroscopic and kinetic model has been developed for global fitting of TA spectra in both the frequency and time domains. Implication of the current ultrafast spectroscopy studies of these novel molecules to their roles in photocatalysis will be discussed.

Validation of a high-power, time-resolved, near-infrared spectroscopy system for measurement of superficial and deep muscle deoxygenation during exercise.

Science.gov (United States)

Koga, Shunsaku; Barstow, Thomas J; Okushima, Dai; Rossiter, Harry B; Kondo, Narihiko; Ohmae, Etsuko; Poole, David C

2015-06-01

Near-infrared assessment of skeletal muscle is restricted to superficial tissues due to power limitations of spectroscopic systems. We reasoned that understanding of muscle deoxygenation may be improved by simultaneously interrogating deeper tissues. To achieve this, we modified a high-power (∼8 mW), time-resolved, near-infrared spectroscopy system to increase depth penetration. Precision was first validated using a homogenous optical phantom over a range of inter-optode spacings (OS). Coefficients of variation from 10 measurements were minimal (0.5-1.9%) for absorption (μa), reduced scattering, simulated total hemoglobin, and simulated O2 saturation. Second, a dual-layer phantom was constructed to assess depth sensitivity, and the thickness of the superficial layer was varied. With a superficial layer thickness of 1, 2, 3, and 4 cm (μa = 0.149 cm(-1)), the proportional contribution of the deep layer (μa = 0.250 cm(-1)) to total μa was 80.1, 26.9, 3.7, and 0.0%, respectively (at 6-cm OS), validating penetration to ∼3 cm. Implementation of an additional superficial phantom to simulate adipose tissue further reduced depth sensitivity. Finally, superficial and deep muscle spectroscopy was performed in six participants during heavy-intensity cycle exercise. Compared with the superficial rectus femoris, peak deoxygenation of the deep rectus femoris (including the superficial intermedius in some) was not significantly different (deoxyhemoglobin and deoxymyoglobin concentration: 81.3 ± 20.8 vs. 78.3 ± 13.6 μM, P > 0.05), but deoxygenation kinetics were significantly slower (mean response time: 37 ± 10 vs. 65 ± 9 s, P ≤ 0.05). These data validate a high-power, time-resolved, near-infrared spectroscopy system with large OS for measuring the deoxygenation of deep tissues and reveal temporal and spatial disparities in muscle deoxygenation responses to exercise. Copyright © 2015 the American Physiological Society.

Final Technical Report: Vibrational Spectroscopy of Transient Combustion Intermediates Trapped in Helium Nanodroplets

Energy Technology Data Exchange (ETDEWEB)

Douberly, Gary Elliott [Univ. of Georgia, Athens, GA (United States)

2017-11-16

The objective of our experimental research program is to isolate and stabilize transient intermediates and products of prototype combustion reactions. This will be accomplished by Helium Nanodroplet Isolation, a novel technique where liquid helium droplets freeze out high energy metastable configurations of a reacting system, permitting infrared spectroscopic characterizations of products and intermediates that result from hydrocarbon radical reactions with molecular oxygen and other small molecules relevant to combustion environments. The low temperature (0.4 K) and rapid cooling associated with He droplets provides a perfectly suited medium to isolate and probe a broad range of molecular radical and carbene systems important to combustion chemistry. The sequential addition of molecular species to He droplets often leads to the stabilization of high-energy, metastable cluster configurations that represent regions of the potential energy surface far from the global minimum. Single and double resonance IR laser spectroscopy techniques, along with Stark and Zeeman capabilities, are being used to probe the structural and dynamical properties of these systems.

Two different carbon-hydrogen complexes in silicon with closely spaced energy levels

Energy Technology Data Exchange (ETDEWEB)

Stübner, R., E-mail: ronald.stuebner@physik.tu-dresden.de, E-mail: kolkov@ifpan.edu.pl; Kolkovsky, Vl., E-mail: ronald.stuebner@physik.tu-dresden.de, E-mail: kolkov@ifpan.edu.pl; Weber, J. [Technische Universität Dresden, Institut für Angewandte Physik, 01062 Dresden (Germany)

2015-08-07

An acceptor and a single donor state of carbon-hydrogen defects (CH{sub A} and CH{sub B}) are observed by Laplace deep level transient spectroscopy at 90 K. CH{sub A} appears directly after hydrogenation by wet chemical etching or hydrogen plasma treatment, whereas CH{sub B} can be observed only after a successive annealing under reverse bias at about 320 K. The activation enthalpies of these states are 0.16 eV for CH{sub A} and 0.14 eV for CH{sub B}. Our results reconcile previous controversial experimental results. We attribute CH{sub A} to the configuration where substitutional carbon binds a hydrogen atom on a bond centered position between carbon and the neighboring silicon and CH{sub B} to another carbon-hydrogen defect.

Correlation of the concentration of the carbon-associated radiation damage levels with the total carbon concentration in silicon

Energy Technology Data Exchange (ETDEWEB)

Ferenczi, G.; Londos, C.A.; Pavelka, T.; Somogyi, M.; Mertens, A.

1988-01-01

The dominant carbon-related radiation damage center in silicon was studied in detail by deep level transient spectroscopy. Samples with different carbon and oxygen content were implanted with gradually increasing proton fluence. Two energetically closely spaced levels were revealed and tentative identities were assigned. One at E/sub T/+E/sub V/ = 0.344 eV (sigma/sub p/ = 1.1 x 10/sup -16/ cm/sup 2/) is assigned as the C+O/sub i/ complex, and that at E/sub T/+E/sub V/ = 0.370 eV (sigma/sub p/ = 8 x 10/sup -18/ cm/sup 2/) is assigned as the C/sub s/-Si/sub i/-C/sub s/ complex. It was shown that the concentration of these defects is correlated to the total concentration of carbon in the crystal.

Theory of deep level trap effects on generation-recombination noise in HgCdTe photoconductors

International Nuclear Information System (INIS)

Iverson, A.E.; Smith, D.L.

1985-01-01

We present a theory of the effect of deep level centers on the generation-recombination (g-r) noise and responsivity of an intrinsic photoconductor. The deep level centers can influence the g-r noise and responsivity in three main ways: (i) they can shorten the bulk carrier lifetime by Shockley--Read--Hall recombination; (ii) for some values of the capture cross sections, deep level densities, and temperature, the deep levels can trap a significant fraction of the photogenerated minority carriers. This trapping reduces the effective minority carrier mobility and diffusivity and thus reduces the effect of carrier sweep out on both g-r noise and responsivity; (iii) the deep level centers add a new thermal noise source, which results from fluctuations between bound and free carriers. The strength of this new noise source decreases with decreasing temperature at a slower rate than band-to-band thermal g-r noise. Calculations have been performed for a X = 0.21, n-type Hg/sub 1-x/Cd/sub x/Te photoconductor using the parameters of a commonly occurring deep level center in this material. We find that for typical operating conditions photoconductive detector performance begins to degrade as the deep level density begins to exceed 10 16 cm -3

Nuclear level mixing resonance spectroscopy

International Nuclear Information System (INIS)

Coussement, R.; Put, P.; Scheveneels, G.; Hardeman, F.

1985-01-01

The existent methods for measuring quadrupole interactions are not suited to nuclei with lifetimes in the micro-seconds to minutes region. AD/NQR, a possible candidate in this lifetime gap, has not yet succeeded in overcoming its predicted difficulties. A new resonant method, recently developed and based on the principles of level mixing (cfr atomic spectroscopy) covers this less accessible lifetime range. Many other kinds of resonances can be described according to the level mixing formalism. The particular example of NMR as a level mixing resonance (LMR) is discussed. The underlying theory of LMR and its important consequences, leading to some interesting features of the method, is briefly formulated. Two successfully performed measurements demonstrate the feasibility and the predicted characteristics of this new promising method. (orig.)

Transient response of level instruments in a research reactor

International Nuclear Information System (INIS)

Cheng, Lap Y.

1989-01-01

A numerical model has been developed to simulate the dynamics of water level instruments in a research nuclear reactor. A bubble device, with helium gas as the working fluid, is used to monitor liquid level by sensing the static head pressure due to the height of liquid in the reactor vessel. A finite-difference model is constructed to study the transient response of the water level instruments to pressure perturbations. The field equations which describe the hydraulics of the helium gas in the bubbler device are arranged in the form of a tridiagonal matrix and the field variables are solved at each time step by the Thomas algorithm. Simulation results indicate that the dynamic response of the helium gas depends mainly on the volume and the inertia of the gas in the level instrument tubings. The anomalies in the simulated level indication are attributed to the inherent lag in the level instrument due to the hydraulics of the system. 1 ref., 5 figs

Deep borehole disposal of high-level radioactive waste.

Energy Technology Data Exchange (ETDEWEB)

Stein, Joshua S.; Freeze, Geoffrey A.; Brady, Patrick Vane; Swift, Peter N.; Rechard, Robert Paul; Arnold, Bill Walter; Kanney, Joseph F.; Bauer, Stephen J.

2009-07-01

Preliminary evaluation of deep borehole disposal of high-level radioactive waste and spent nuclear fuel indicates the potential for excellent long-term safety performance at costs competitive with mined repositories. Significant fluid flow through basement rock is prevented, in part, by low permeabilities, poorly connected transport pathways, and overburden self-sealing. Deep fluids also resist vertical movement because they are density stratified. Thermal hydrologic calculations estimate the thermal pulse from emplaced waste to be small (less than 20 C at 10 meters from the borehole, for less than a few hundred years), and to result in maximum total vertical fluid movement of {approx}100 m. Reducing conditions will sharply limit solubilities of most dose-critical radionuclides at depth, and high ionic strengths of deep fluids will prevent colloidal transport. For the bounding analysis of this report, waste is envisioned to be emplaced as fuel assemblies stacked inside drill casing that are lowered, and emplaced using off-the-shelf oilfield and geothermal drilling techniques, into the lower 1-2 km portion of a vertical borehole {approx}45 cm in diameter and 3-5 km deep, followed by borehole sealing. Deep borehole disposal of radioactive waste in the United States would require modifications to the Nuclear Waste Policy Act and to applicable regulatory standards for long-term performance set by the US Environmental Protection Agency (40 CFR part 191) and US Nuclear Regulatory Commission (10 CFR part 60). The performance analysis described here is based on the assumption that long-term standards for deep borehole disposal would be identical in the key regards to those prescribed for existing repositories (40 CFR part 197 and 10 CFR part 63).

Electronic structure of divacancy-hydrogen complexes in silicon

International Nuclear Information System (INIS)

Coutinho, J; Torres, V J B; Jones, R; Oeberg, S; Briddon, P R

2003-01-01

Divacancy-hydrogen complexes (V 2 H and V 2 H 2 ) in Si are studied by ab initio modelling using large supercells. Here we pay special attention to their electronic structure, showing that these defects produce deep carrier traps. Calculated electrical gap levels indicate that V 2 H 2 is an acceptor, whereas V 2 H is amphoteric, with levels close to those of the well known divacancy. Finally our results are compared with the available data from deep level transient spectroscopy and electron paramagnetic resonance experiments

Deep rest-frame far-UV spectroscopy of the giant Lyman α emitter 'Himiko'

DEFF Research Database (Denmark)

Zabl, J.; Nørgaard-Nielsen, Hans Ulrik; Fynbo, J. P. U.

2015-01-01

We present deep 10 h VLT/XSHOOTER spectroscopy for an extraordinarily luminous and extended Ly alpha emitter at z = 6.595 referred to asHimiko and first discussed by Ouchi et al., with the purpose of constraining the mechanisms powering its strong emission. Complementary to the spectrum, we discuss...... near-infrared imaging data from the CANDELS survey. We find neither for He II nor any metal line a significant excess, with 3 σ upper limits of 6.8, 3.1, and 5.8 x 10-18 erg s-1 cm-2 for C IV λ 1549, He II λ 1640, C III] λ 1909, respectively, assuming apertures with 200 km s-1 widths and offset by -250...

Ultrafast multi-pulse transient absorption spectroscopy of fucoxanthin chlorophyll a protein from Phaeodactylum tricornutum.

Science.gov (United States)

West, Robert G; Bína, David; Fuciman, Marcel; Kuznetsova, Valentyna; Litvín, Radek; Polívka, Tomáš

2018-05-01

We have applied femtosecond transient absorption spectroscopy in pump-probe and pump-dump-probe regimes to study energy transfer between fucoxanthin and Chl a in fucoxanthin-Chl a complex from the pennate diatom Phaeodactylum tricornutum. Experiments were carried out at room temperature and 77 K to reveal temperature dependence of energy transfer. At both temperatures, the ultrafast (pump-dump-probe regime, with the dump pulse centered in the spectral region of ICT stimulated emission at 950 nm and applied at 2 ps after excitation, proved that the S 1 and ICT states of fucoxanthin in FCP are individual, yet coupled entities. Analysis of the pump-dump-probe data suggested that the main energy donor in the slow S 1 /ICT-Chl a route is the S 1 part of the S 1 /ICT potential surface. Copyright © 2018 Elsevier B.V. All rights reserved.

Sea-level and deep-sea-temperature variability over the past 5.3 million years.

Science.gov (United States)

Rohling, E J; Foster, G L; Grant, K M; Marino, G; Roberts, A P; Tamisiea, M E; Williams, F

2014-04-24

Ice volume (and hence sea level) and deep-sea temperature are key measures of global climate change. Sea level has been documented using several independent methods over the past 0.5 million years (Myr). Older periods, however, lack such independent validation; all existing records are related to deep-sea oxygen isotope (δ(18)O) data that are influenced by processes unrelated to sea level. For deep-sea temperature, only one continuous high-resolution (Mg/Ca-based) record exists, with related sea-level estimates, spanning the past 1.5 Myr. Here we present a novel sea-level reconstruction, with associated estimates of deep-sea temperature, which independently validates the previous 0-1.5 Myr reconstruction and extends it back to 5.3 Myr ago. We find that deep-sea temperature and sea level generally decreased through time, but distinctly out of synchrony, which is remarkable given the importance of ice-albedo feedbacks on the radiative forcing of climate. In particular, we observe a large temporal offset during the onset of Plio-Pleistocene ice ages, between a marked cooling step at 2.73 Myr ago and the first major glaciation at 2.15 Myr ago. Last, we tentatively infer that ice sheets may have grown largest during glacials with more modest reductions in deep-sea temperature.

Improved Carrier Transport in Perovskite Solar Cells Probed by Femtosecond Transient Absorption Spectroscopy.

Science.gov (United States)

Serpetzoglou, Efthymis; Konidakis, Ioannis; Kakavelakis, George; Maksudov, Temur; Kymakis, Emmanuel; Stratakis, Emmanuel

2017-12-20

CH 3 NH 3 PbI 3 perovskite thin films have been deposited on glass/indium tin oxide/hole transport layer (HTL) substrates, utilizing two different materials as the HTLs. In the first configuration, the super hydrophilic polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate), known as PEDOT:PSS, was employed as the HTL material, whereas in the second case, the nonwetting poly(triarylamine) semiconductor polymer, known as PTAA, was used. It was found that when PTAA is used as the HTL material, the averaged power conversion efficiency (PCE) of the perovskite solar cells (PSCs) remarkably increases from 12.60 to 15.67%. To explore the mechanism behind this enhancement, the aforementioned perovskite/HTL arrangements were investigated by time-resolved transient absorption spectroscopy (TAS) performed under inert conditions. By means of TAS, the charge transfer, carrier trapping, and hole injection dynamics from the photoexcited perovskite layers to the HTL can be directly monitored via the characteristic bleaching profile of the perovskite at ∼750 nm. TAS studies revealed faster relaxation times and decay dynamics when the PTAA polymer is employed, which potentially account for the enhanced PCE observed. The TAS results are correlated with the structure and crystalline quality of the corresponding perovskite films, investigated by scanning electron microscopy, X-ray diffraction, atomic force microscopy, micro-photoluminescence, and transmittance spectroscopy. It is concluded that TAS is a benchmark technique for the understanding of the carrier transport mechanisms in PSCs and constitutes a figure-of-merit tool toward their efficiency improvement.

Ultrafast Transient Absorption Spectroscopy Investigation of Photoinduced Dynamics in Novel Donor-Acceptor Core-Shell Nanostructures for Organic Photovoltaics

Science.gov (United States)

Strain, Jacob; Jamhawi, Abdelqader; Abeywickrama, Thulitha M.; Loomis, Wendy; Rathnayake, Hemali; Liu, Jinjun

2016-06-01

Novel donor-acceptor nanostructures were synthesized via covalent synthesis and/or UV cross-linking method. Their photoinduced dynamics were investigated with ultrafast transient absorption (TA) spectroscopy. These new nanostructures are made with the strategy in mind to reduce manufacturing steps in the process of fabricating an organic photovoltaic cell. By imitating the heterojunction interface within a fixed particle domain, several fabrication steps can be bypassed reducing cost and giving more applicability to other film deposition methods. Such applications include aerosol deposition and ink-jet printing. The systems that were studied by TA spectroscopy include PDIB core, PDIB-P3HT core-shell, and PDIB-PANT core-shell which range in size from 60 to 130 nm. Within the experimentally accessible spectra range there resides a region of ground state bleaching, stimulated emission, and excited-state absorption of both neutrals and anions. Control experiments have been carried out to assign these features. At high pump fluences the TA spectra of PDIB core alone also indicate an intramolecular charge separation. The TA spectroscopy results thus far suggest that the core-shells resemble the photoinduced dynamics of a standard film although the particles are dispersed in solution, which indicates the desired outcome of the work.

Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS

Science.gov (United States)

De Barros, O.; Le Tron, B.; Woods, R. C.; Giroult-Matlakowski, G.; Vincent, G.; Brémond, G.

1996-08-01

This paper reports an electrical characterisation of the emitter-base junction of Si pseudo-HBTs and SiGe HBTs fabricated in a CMOS compatible single polysilicon self-aligned process. From the reverse characteristics it appears that the definition of the emitter-base junction by plasma etching induces peripheral defects that increase the base current of the transistors. Deep level transient spectroscopy measurements show a deep level in the case of SiGe base, whose spatial origin is not fully determinate up to now.

Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique

International Nuclear Information System (INIS)

Kaniewska, M.; Engstroem, O.

2007-01-01

Electron trapping centers at the GaAs/GaAs interface grown by molecular beam epitaxy (MBE)-interruption growth technique have been studied by capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS). Two main electron traps have been revealed with activation energies at 0.16 eV and 0.52 eV from the conduction band. Inhomogeneous spatial distributions of the traps, obtained by DLTS profiling, indicate that they are agglomerated at the interrupted interface on a concentration level of (2-3) x 10 15 cm -3 at their maximum. Their behaviour is typical of acceptor-like traps when investigating by C-V profiling as a function of temperature. Based on a comparison made with electron traps in MBE-GaAs as well as with the traps in InAs/GaAs quantum dot/quantum well (QD/QW) structures, we conclude they are the well-known EL10 and EL4 defects, respectively, and their concentrations are growth condition dependent. They may be point defect-impurity complexes. Their presence may cause interpretation and application problems of the low-dimensional InAs/GaAs structures

Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique

Energy Technology Data Exchange (ETDEWEB)

Kaniewska, M. [Department of Analysis of Semicoductor Nanostructures, Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)], E-mail: kaniew@ite.waw.pl; Engstroem, O. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Goeteborg (Sweden)

2007-09-15

Electron trapping centers at the GaAs/GaAs interface grown by molecular beam epitaxy (MBE)-interruption growth technique have been studied by capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS). Two main electron traps have been revealed with activation energies at 0.16 eV and 0.52 eV from the conduction band. Inhomogeneous spatial distributions of the traps, obtained by DLTS profiling, indicate that they are agglomerated at the interrupted interface on a concentration level of (2-3) x 10{sup 15} cm{sup -3} at their maximum. Their behaviour is typical of acceptor-like traps when investigating by C-V profiling as a function of temperature. Based on a comparison made with electron traps in MBE-GaAs as well as with the traps in InAs/GaAs quantum dot/quantum well (QD/QW) structures, we conclude they are the well-known EL10 and EL4 defects, respectively, and their concentrations are growth condition dependent. They may be point defect-impurity complexes. Their presence may cause interpretation and application problems of the low-dimensional InAs/GaAs structures.

The electronic structure of impurities in semiconductors

CERN Multimedia

Nylandsted larsen, A; Svane, A

2002-01-01

The electronic structure of isolated substitutional or interstitial impurities in group IV, IV-IV, and III-V compound semiconductors will be studied. Mössbauer spectroscopy will be used to investigate the incorporation of the implanted isotopes on the proper lattice sites. The data can be directly compared to theoretical calculations using the LMTO scheme. Deep level transient spectroscopy will be used to identify the band gap levels introduced by metallic impurities, mainly in Si~and~Si$ _{x}$Ge$_{1-x}$. \\\\ \\\\

Convolutional Neural Networks for Text Categorization: Shallow Word-level vs. Deep Character-level

OpenAIRE

Johnson, Rie; Zhang, Tong

2016-01-01

This paper reports the performances of shallow word-level convolutional neural networks (CNN), our earlier work (2015), on the eight datasets with relatively large training data that were used for testing the very deep character-level CNN in Conneau et al. (2016). Our findings are as follows. The shallow word-level CNNs achieve better error rates than the error rates reported in Conneau et al., though the results should be interpreted with some consideration due to the unique pre-processing o...

Deep-ultraviolet cavity ringdown spectroscopy

NARCIS (Netherlands)

Sneep, M.C.; Hannemann, S.; van Duijn, E.J.; Ubachs, W.M.G.

2004-01-01

The sensitive optical detection technique of cavity ringdown spectroscopy is extended to the wavelength range 197-204 nm. A novel design narrowband Fourier-transform-limited laser is used, and the technique is applied to gas-phase extinction measurements in CO

Investigations of Deep-Level Fe-centres in Si by Mössbauer Spectroscopy

CERN Multimedia

Dietrich, M

2002-01-01

%IS359\\\\ \\\\Electronic, vibrational and diffusional properties of interstitial and substitutional Fe impurities in silicon are studied by $ ^{57} $Fe Mössbauer emission spectroscopy utilizing implanted radioactive $ ^{57}$Mn$^{+} $ parent ions from ISOLDE as probe atoms. Thus the electronic charge density and the impurity mean-square vibrational amplitude shall be determined for substitutional Fe$_{s} $ and for interstitial Fe$_{i}^{0/+} $ in its two different charge states. These quantities are complementary to previously determined hyperfine interaction parameters and are expected to shed light on the nature of the deviations between calculated and measured parameters. The supposedly different diffusivities of interstitial Fe$_{i}^{0} $ and Fe$_{i}^{+} $ shall be measured by the broadening of the Mössbauer lines, i.e. at a temperature where diffusion jumps occur on an atomic scale within the lifetime of the Mössbauer state.

Millimeterwave spectroscopy of transient molecules produced in a ...

Indian Academy of Sciences (India)

The construction of a millimeterwave spectrometer to study the pure rotational spectra of transient molecules in the gas phase is presented. The spectrometer is a source-modulated system combined with a free space glass discharge cell. Millimeterwave radiation has been produced using a frequency multiplier, the ...

Preliminary analyses of the deep geoenvironmental characteristics for the deep borehole disposal of high-level radioactive waste in Korea

Energy Technology Data Exchange (ETDEWEB)

Lee, Jong Youl; Lee, Min Soo; Choi, Heui Joo; Kim, Geon Young; Kim, Kyung Su [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2016-06-15

Spent fuels from nuclear power plants, as well as high-level radioactive waste from the recycling of spent fuels, should be safely isolated from human environment for an extremely long time. Recently, meaningful studies on the development of deep borehole radioactive waste disposal system in 3-5 km depth have been carried out in USA and some countries in Europe, due to great advance in deep borehole drilling technology. In this paper, domestic deep geoenvironmental characteristics are preliminarily investigated to analyze the applicability of deep borehole disposal technology in Korea. To do this, state-of-the art technologies in USA and some countries in Europe are reviewed, and geological and geothermal data from the deep boreholes for geothermal usage are analyzed. Based on the results on the crystalline rock depth, the geothermal gradient and the spent fuel types generated in Korea, a preliminary deep borehole concept including disposal canister and sealing system, is suggested.

Preliminary analyses of the deep geoenvironmental characteristics for the deep borehole disposal of high-level radioactive waste in Korea

International Nuclear Information System (INIS)

Lee, Jong Youl; Lee, Min Soo; Choi, Heui Joo; Kim, Geon Young; Kim, Kyung Su

2016-01-01

Spent fuels from nuclear power plants, as well as high-level radioactive waste from the recycling of spent fuels, should be safely isolated from human environment for an extremely long time. Recently, meaningful studies on the development of deep borehole radioactive waste disposal system in 3-5 km depth have been carried out in USA and some countries in Europe, due to great advance in deep borehole drilling technology. In this paper, domestic deep geoenvironmental characteristics are preliminarily investigated to analyze the applicability of deep borehole disposal technology in Korea. To do this, state-of-the art technologies in USA and some countries in Europe are reviewed, and geological and geothermal data from the deep boreholes for geothermal usage are analyzed. Based on the results on the crystalline rock depth, the geothermal gradient and the spent fuel types generated in Korea, a preliminary deep borehole concept including disposal canister and sealing system, is suggested

Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level.

Science.gov (United States)

Vines, L; Bhoodoo, C; von Wenckstern, H; Grundmann, M

2017-12-13

The evolution of sheet resistance of n-type In 2 O 3 and Ga 2 O 3 exposed to bombardment with MeV 12 C and 28 Si ions at 35 K is studied in situ. While the sheet resistance of Ga 2 O 3 increased by more than eight orders of magnitude as a result of ion irradiation, In 2 O 3 showed a more complex defect evolution and became more conductive when irradiated at the highest doses. Heating up to room temperature reduced the sheet resistivity somewhat, but Ga 2 O 3 remained highly resistive, while In 2 O 3 showed a lower resistance than as deposited samples. Thermal admittance spectroscopy and deep level transient spectroscopy did not reveal new defect levels for irradiation up to [Formula: see text] cm -2 . A model where larger defect complexes preferentially produce donor like defects in In 2 O 3 is proposed, and may reveal a microscopic view of a charge neutrality level within the conduction band, as previously proposed.

Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level

Science.gov (United States)

Vines, L.; Bhoodoo, C.; von Wenckstern, H.; Grundmann, M.

2018-01-01

The evolution of sheet resistance of n-type In2O3 and Ga2O3 exposed to bombardment with MeV 12C and 28Si ions at 35 K is studied in situ. While the sheet resistance of Ga2O3 increased by more than eight orders of magnitude as a result of ion irradiation, In2O3 showed a more complex defect evolution and became more conductive when irradiated at the highest doses. Heating up to room temperature reduced the sheet resistivity somewhat, but Ga2O3 remained highly resistive, while In2O3 showed a lower resistance than as deposited samples. Thermal admittance spectroscopy and deep level transient spectroscopy did not reveal new defect levels for irradiation up to 2 × 1012 cm-2. A model where larger defect complexes preferentially produce donor like defects in In2O3 is proposed, and may reveal a microscopic view of a charge neutrality level within the conduction band, as previously proposed.

A microcomputer-controlled modulation technique for the detection of transient species in UV photoelectron spectroscopy

International Nuclear Information System (INIS)

Lonkhuyzen, H. van; Muller, H.G.; Lange, C.A. de

1980-01-01

A microcomputer-controlled modulation method is described to measure UV photoelectron spectra of transient species generated in a microwave discharge. Spectra at low and high microwave power levels are simultaneously recorded and afterwards linearly combined in order to remove parent compound signals. The method is applied to discharged oxygen where the transition O 2 + ( 2 PHIsub(u)) 2 ( 1 Δsub(g)) becomes visible without interference from the parent molecule O 2 ( 3 Σsub(g) - ), and to discharged sulphur dioxide where SO( 3 Σ - ) and S( 3 P) photoelectron spectra are obtained free from SO 2 bands. Finally the build-up of transient bands as a function of time is recorded. (orig.)

Deep Inelastic Scattering at the Amplitude Level

International Nuclear Information System (INIS)

Brodsky, Stanley J.

2005-01-01

The deep inelastic lepton scattering and deeply virtual Compton scattering cross sections can be interpreted in terms of the fundamental wavefunctions defined by the light-front Fock expansion, thus allowing tests of QCD at the amplitude level. The AdS/CFT correspondence between gauge theory and string theory provides remarkable new insights into QCD, including a model for hadronic wavefunctions which display conformal scaling at short distances and color confinement at large distances

Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors

International Nuclear Information System (INIS)

Klein, P B; Binari, S C

2003-01-01

This review is concerned with the characterization and identification of the deep centres that cause current collapse in nitride-based field effect transistors. Photoionization spectroscopy is an optical technique that has been developed to probe the characteristics of these defects. Measured spectral dependences provide information on trap depth, lattice coupling and on the location of the defects in the device structure. The spectrum of an individual trap may also be regarded as a 'fingerprint' of the defect, allowing the trap to be followed in response to the variation of external parameters. The basis for these measurements is derived through a modelling procedure that accounts quantitatively for the light-induced drain current increase in the collapsed device. Applying the model to fit the measured variation of drain current increase with light illumination provides an estimate of the concentrations and photoionization cross-sections of the deep defects. The results of photoionization studies of GaN metal-semiconductor field effect transistors and AlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic chemical vapour deposition (MOCVD) are presented and the conclusions regarding the nature of the deep traps responsible are discussed. Finally, recent photoionization studies of current collapse induced by short-term (several hours) bias stress in AlGaN/GaN HEMTs are described and analysed for devices grown by both MOCVD and molecular beam epitaxy. (topical review)

Fibrillation mechanism of a model intrinsically disordered protein revealed by 2D correlation deep UV resonance Raman spectroscopy.

Science.gov (United States)

Sikirzhytski, Vitali; Topilina, Natalya I; Takor, Gaius A; Higashiya, Seiichiro; Welch, John T; Uversky, Vladimir N; Lednev, Igor K

2012-05-14

Understanding of numerous biological functions of intrinsically disordered proteins (IDPs) is of significant interest to modern life science research. A large variety of serious debilitating diseases are associated with the malfunction of IDPs including neurodegenerative disorders and systemic amyloidosis. Here we report on the molecular mechanism of amyloid fibrillation of a model IDP (YE8) using 2D correlation deep UV resonance Raman spectroscopy. YE8 is a genetically engineered polypeptide, which is completely unordered at neutral pH yet exhibits all properties of a fibrillogenic protein at low pH. The very first step of the fibrillation process involves structural rearrangements of YE8 at the global structure level without the detectable appearance of secondary structural elements. The formation of β-sheet species follows the global structural changes and proceeds via the simultaneous formation of turns and β-strands. The kinetic mechanism revealed is an important new contribution to understanding of the general fibrillation mechanism proposed for IDP.

Level crossings, excess times, and transient plasma–wall interactions in fusion plasmas

Energy Technology Data Exchange (ETDEWEB)

Theodorsen, A., E-mail: audun.theodorsen@uit.no; Garcia, O. E., E-mail: odd.erik.garcia@uit.no [Department of Physics and Technology, UiT The Arctic University of Norway, N-9037 Tromsø (Norway)

2016-04-15

Based on a stochastic model for intermittent fluctuations in the boundary region of magnetically confined plasmas, an expression for the level crossing rate is derived from the joint distribution of the process and its derivative. From this the average time spent by the process above a certain threshold level is obtained. This provides novel predictions of plasma–wall interactions due to transient transport events associated with a radial motion of blob-like structures in the scrape-off layer.

Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods

Energy Technology Data Exchange (ETDEWEB)

Alnoor, Hatim, E-mail: hatim.alnoor@liu.se; Chey, Chan Oeurn; Pozina, Galia; Willander, Magnus; Nur, Omer [Department of Science and Technology (ITN), Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden); Liu, Xianjie; Khranovskyy, Volodymyr [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-583 81 Linköping (Sweden)

2015-08-15

Hexagonal c-axis oriented zinc oxide (ZnO) nanorods (NRs) with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL) spectra were collected for all samples. Cathodoluminescence (CL) spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE) to the deep-level emission (DLE) peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h), which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h) will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.

Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods

Directory of Open Access Journals (Sweden)

Hatim Alnoor

2015-08-01

Full Text Available Hexagonal c-axis oriented zinc oxide (ZnO nanorods (NRs with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL spectra were collected for all samples. Cathodoluminescence (CL spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE to the deep-level emission (DLE peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h, which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.

Coulomb Interaction between InAs/GaAs Quantum Dots and Adjacent Impurities

International Nuclear Information System (INIS)

Engstroem, O.; Kaniewska, M.; Kaczmarczyk, M.

2011-01-01

Defects positioned close to a plane of quantum dots (QDs) are shown to be influenced by coulomb interaction effect when the quantum dots are charged by electrons. Signals from deep level transient spectroscopy (DLTS) measurement give rise to a mirror effect in the spectrum depending on movement of the defect energy level in relation to the Fermi-level as a result of the electron traffic at the QDs.

A Polarization-Adjustable Picosecond Deep-Ultraviolet Laser for Spin- and Angle-Resolved Photoemission Spectroscopy

International Nuclear Information System (INIS)

Zhang Feng-Feng; Yang Feng; Zhang Shen-Jin; Wang Zhi-Min; Xu Feng-Liang; Peng Qin-Jun; Zhang Jing-Yuan; Xu Zu-Yan; Wang Xiao-Yang; Chen Chuang-Tian

2012-01-01

We report on a polarization-adjustable picosecond deep-ultraviolet (DUV) laser at 177.3 nm. The DUV laser was produced by second harmonic generation from a mode-locked laser at 355 nm in nonlinear optical crystal KBBF. The laser delivered a maximum average output power of 1.1 mW at 177.3 nm. The polarization of the 177.3 nm beam was adjusted with linear and circular polarization by means of λ/4 and λ/2 wave plates. To the best of our knowledge, the laser has been employed as the circularly polarized and linearly polarized DUV light source for a spin- and angle-resolved photoemission spectroscopy with high resolution for the first time. (fundamental areas of phenomenology(including applications))

Spectroscopy of bound multi exciton complexes and deep centers in implanted and annealed silicon

International Nuclear Information System (INIS)

Babich, V.M.; Valakh, M.Ya.; Kovalchuk, V.B.; Rudko, G.Yu.; Shakhrajchuk, N.I.

1989-01-01

The change of silicon properties relevant to device physics caused by ion implantation and thermal annealing is studied. It is shown that in boron-doped p-Si the increase of P + ions implantation doses from 10 12 to 10 14 ions/cm 2 lead to a decrease of the broadening of boron bound exciton bands. This behaviour is caused by implantation-induced disordering of the lattice. The subsequent thermal annealing restores the intensity and the halfwidth of the above-mentioned bands and initiates the increase of the bands which correspond to excitons bond on the implanted phosphorus ions. Measurements of phosphorus bound exciton band intensities are applicable to the characterization of the process of phosphorus activation. Analysis of low energy region of luminescence spectra of heat treated samples shows that there is a correlation between the process of implanted phosphorus activation and the one of radiation defects transformation. The influence of germanium doping on the generation of thermal donors by means of spectroscopy of deep centres luminescence has been investigated. It is shown that the introduction of germanium in concentrations of 10 19 -10 20 cm -3 effectively suppresses the generation of thermal donors and deep centres under investigation. (author)

Metastable defect response in CZTSSe from admittance spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Koeper, Mark J.; Hages, Charles J.; Li, Jian V.; Levi, Dean; Agrawal, Rakesh

2017-10-02

Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se)4 where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the device measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.

A High-Speed Spectroscopy System for Observing Lightning and Transient Luminous Events

Science.gov (United States)

Boggs, L.; Liu, N.; Austin, M.; Aguirre, F.; Tilles, J.; Nag, A.; Lazarus, S. M.; Rassoul, H.

2017-12-01

Here we present a high-speed spectroscopy system that can be used to record atmospheric electrical discharges, including lightning and transient luminous events. The system consists of a Phantom V1210 high-speed camera, a Volume Phase Holographic (VPH) grism, an optional optical slit, and lenses. The spectrograph has the capability to record videos at speeds of 200,000 frames per second and has an effective wavelength band of 550-775 nm for the first order spectra. When the slit is used, the system has a spectral resolution of about 0.25 nm per pixel. We have constructed a durable enclosure made of heavy duty aluminum to house the high-speed spectrograph. It has two fans for continuous air flow and a removable tray to mount the spectrograph components. In addition, a Watec video camera (30 frames per second) is attached to the top of the enclosure to provide a scene view. A heavy duty Pelco pan/tilt motor is used to position the enclosure and can be controlled remotely through a Rasperry Pi computer. An observation campaign has been conducted during the summer and fall of 2017 at the Florida Institute of Technology. Several close cloud-to-ground discharges were recorded at 57,000 frames per second. The spectrum of a downward stepped negative leader and a positive cloud-to-ground return stroke will be reported on.

Electric field enhancement of electron emission rates from Z1/2 centers in 4H-SiC

International Nuclear Information System (INIS)

Evwaraye, A. O.; Smith, S. R.; Mitchel, W. C.; Farlow, G. C.

2009-01-01

Z 1/2 defect centers were produced by irradiating 4H-SiC bulk samples with 1 MeV electrons at room temperature. The emission rate dependence on the electric field in the depletion region was measured using deep level transient spectroscopy and double-correlation deep level transient spectroscopy. It is found that the Z 1/2 defect level shows a strong electric field dependence with activation energy decreasing from E c -0.72 eV at zero field to E c -0.47 eV at 6.91x10 5 V/cm. The phonon assisted tunneling model of Karpus and Perel [Sov. Phys. JETP 64, 1376 (1986)] completely describes the experimental data. This model describes the dependence of the emission rate on electric field F as e n (F)=e no exp(F 2 /F c 2 ), where F c is the characteristic field that depends on the phonon assisted tunneling time τ 2 . The values of F c and τ 2 were determined and the analysis of the data leads to the suggestion that Z 1/2 may be a substitutional point defect.

The calculation of deep levels in semiconductors by using a recursion method for super-cells

International Nuclear Information System (INIS)

Wong Yongliang.

1987-01-01

The paper presents the theory of deep levels in semiconductors, the super-cell approach to the theory of deep level impurities, the calculation of band structure by using the tight-binding method and the recursion method used to study the defects in the presence of lattice relaxation and extended defect complexes. 47 refs

Should the U.S. proceed to consider licensing deep geological disposal of high-level nuclear waste

International Nuclear Information System (INIS)

Curtiss, J.R.

1993-01-01

The United States, as well as other countries facing the question of how to handle high-level nuclear waste, has decided that the most appropriate means of disposal is in a deep geologic repository. In recent years, the Radioactive Waste Management Committee of the Nuclear Energy Agency has developed several position papers on the technical achievability of deep geologic disposal, thus demonstrating the serious consideration of deep geologic disposal in the international community. The Committee has not, as yet, formally endorsed disposal in a deep geologic repository as the preferred method of handling high-level nuclear waste. The United States, on the other hand, has studied the various methods of disposing of high-level nuclear waste, and has determined that deep geologic disposal is the method that should be developed. The purpose of this paper is to present a review of the United States' decision on selecting deep geologic disposal as the preferred method of addressing the high-level waste problem. It presents a short history of the steps taken by the U.S. in determining what method to use, discusses the NRC's waste Confidence Decision, and provides information on other issues in the U.S. program such as reconsideration of the final disposal standard and the growing inventory of spent fuel in storage

Shell-Tunneling Spectroscopy of the Single-Particle Energy Levels of Insulating Quantum Dots

NARCIS (Netherlands)

Bakkers, E.P.A.M.; Hens, Z.; Zunger, A.; Franceschetti, A; Kouwenhoven, L.P.; Gurevich, L.; Vanmaekelbergh, D.

2001-01-01

The energy levels of CdSe quantum dots are studied by scanning tunneling spectroscopy. By varying the tip-dot distance, we switch from "shell-filling" spectroscopy (where electrons accumulate in the dot and experience mutual repulsion) to "shell-tunneling" spectroscopy (where electrons tunnel, one

Deep subcritical levels measurements dependents upon kinetic distortion factors

International Nuclear Information System (INIS)

Pan Shibiao; Li Xiang; Fu Guo'en; Huang Liyuan; Mu Keliang

2013-01-01

The measurement of deep subcritical levels, with the increase of subcriticality, showed that the results impact on the kinetic distortion effect, along with neutron flux strongly deteriorated. Using the diffusion theory, calculations have been carried out to quantify the kinetic distortion correction factors in subcritical systems, and these indicate that epithermal neutron distributions are strongly affected by kinetic distortion. Subcriticality measurements in four different rod-state combination at the zero power device was carried out. The test data analysis shows that, with increasing subcriticality, kinetic distortion effect correction factor gradually increases from 1.052 to 1.065, corresponding reactive correction amount of 0.78β eff ∼ 3.01β eff . Thus, it is necessary to consider the kinetic distortion effect in the deep subcritical reactivity measurements. (authors)

Surface Transient Binding-Based Fluorescence Correlation Spectroscopy (STB-FCS), a Simple and Easy-to-Implement Method to Extend the Upper Limit of the Time Window to Seconds.

Science.gov (United States)

Peng, Sijia; Wang, Wenjuan; Chen, Chunlai

2018-05-10

Fluorescence correlation spectroscopy is a powerful single-molecule tool that is able to capture kinetic processes occurring at the nanosecond time scale. However, the upper limit of its time window is restricted by the dwell time of the molecule of interest in the confocal detection volume, which is usually around submilliseconds for a freely diffusing biomolecule. Here, we present a simple and easy-to-implement method, named surface transient binding-based fluorescence correlation spectroscopy (STB-FCS), which extends the upper limit of the time window to seconds. We further demonstrated that STB-FCS enables capture of both intramolecular and intermolecular kinetic processes whose time scales cross several orders of magnitude.

Applications of laser-induced gratings to spectroscopy and dynamics

Energy Technology Data Exchange (ETDEWEB)

Rohlfing, E.A. [Sandia National Laboratories, Livermore, CA (United States)

1993-12-01

This program has traditionally emphasized two principal areas of research. The first is the spectroscopic characterization of large-amplitude motion on the ground-state potential surface of small, transient molecules. The second is the reactivity of carbonaceous clusters and its relevance to soot and fullerene formation in combustion. Motivated initially by the desire to find improved methods of obtaining stimulated emission pumping (SEP) spectra of transients, most of our recent work has centered on the use of laser-induced gratings or resonant four-wave mixing in free-jet expansions. These techniques show great promise for several chemical applications, including molecular spectroscopy and photodissociation dynamics. The author describes recent applications of two-color laser-induced grating spectroscopy (LIGS) to obtain background-free SEP spectra of transients and double resonance spectra of nonfluorescing species, and the use of photofragment transient gratings to probe photodissociation dynamics.

Advances in DUV spectroscopy

DEFF Research Database (Denmark)

Buchhave, Preben; Tidemand-Lichtenberg, Peter; Mogensen, Claus Tilsted

The would-be advantages of deep UV (DUV) spectroscopy are well known, but the potential applications have so far not been fully realized due to technological limitations and, perhaps, lack of bright ideas. However, new components and new knowledge about DUV spectra and spectroscopic methods...... combined with increasing needs for solutions to practical problems in environmental protection, medicine and pollution monitoring promise a new era in DUV spectroscopy. Here we shall review the basis for DUV spectroscopy, both DUV fluorescence and DUV Raman spectroscopy, and describe recent advances...

Study and microscopic characterization of the cadmium telluride deep levels

International Nuclear Information System (INIS)

Biglari, B.

1989-05-01

The spectroscopic methods PICTS, QTS and CTS were developed and perfected to investigate deep level analysis of high resistivity CdTe crystals which were either undoped, or doped with chlorine and copper. Crystals which were grown in space were also investigated. The main characterization of defect levels was determined and different correlations were established between the material's resistivity, chemical residues, dopant concentration and the nuclear radiation detector parameters. Using PICTS and CTS techniques, the generation of defects, under strong gamma-ray irradiation and particle bombardment was also studied. The influence of hydrogen on the main electrical characteristics of CdTe, in particular its ability to passivate the electrical activity of many deep defect and impurity states have been demonstrated. The compensation effects of Cl, Cu and H + are interpreted using the qualitative models based on different possibilities of pairing or triplet formation between the ions of these dopants and those of defects [fr

Lack of mutagens in deep-fat-fried foods obtained at the retail level.

Science.gov (United States)

Taylor, S L; Berg, C M; Shoptaugh, N H; Scott, V N

1982-04-01

The basic methylene chloride extract from 20 of 30 samples of foods fried in deep fat failed to elicit any mutagenic response that could be detected in the Salmonella typhimurium/mammalian microsome assay. The basic extracts of the remaining ten samples (all three chicken samples studied, two of the four potato-chip samples, one of four corn-chip samples, the sample of onion rings, two of six doughnuts, and one of three samples of french-fried potato) showed evidence of weak mutagenic activity. In these samples, amounts of the basic extract equivalent to 28.5-57 g of the original food sample were required to produce revertants at levels of 2.6-4.8 times the background level. Only two of the acidic methylene chloride extracts from the 30 samples exhibited mutagenic activity greater than 2.5 times the background reversion level, and in both cases (one corn-chip and one shrimp sample) the mutagenic response was quite weak. The basic extract of hamburgers fried in deep fat in a home-style fryer possessed higher levels of mutagenic activity (13 times the background reversion level). However, the mutagenic activity of deep-fried hamburgers is some four times lower than that of pan-fried hamburgers.

Impacts of Carrier Transport and Deep Level Defects on Delayed Cathodoluminescence in Droop-Mitigating InGaN/GaN LEDs

Energy Technology Data Exchange (ETDEWEB)

Zhao, Zhibo; Singh, Akshay; Chesin, Jordan; Armitage, Rob; Wildeson, Isaac; Deb, Parijat; Armstrong, Andrew; Kisslinger, Kim; Stach, Eric; Gradecak, Silvija

2017-07-25

Prevalent droop mitigation strategies in InGaN-based LEDs require structural and/or compositional changes in the active region but are accompanied by a detrimental reduction in external quantum efficiency (EQE) due to increased Shockley-Read-Hall recombination. Understanding the optoelectronic impacts of structural modifications in InGaN/GaN quantum wells (QW) remains critical for emerging high-power LEDs. In this work, we use a combination of electron microscopy tools along with standard electrical characterization to investigate a wide range of low-droop InGaN/GaN QW designs. We find that chip-scale EQE is uncorrelated with extended well-width fluctuations observed in scanning transmission electron microscopy. Further, we observe delayed cathodoluminescence (CL) response from designs in which calculated band profiles suggest facile carrier escape from individual QWs. Samples with the slowest CL responses also exhibit the lowest EQEs and highest QW defect densities in deep level optical spectroscopy. We propose a model in which the electron beam (i) passivates deep level defect states and (ii) drives charge carrier accumulation and subsequent reduction of the built-in field across the multi-QW active region, resulting in delayed radiative recombination. Finally, we correlate CL rise dynamics with capacitance-voltage measurements and show that certain early-time components of the CL dynamics reflect the open circuit carrier population within one or more QWs.

Femtosecond time-resolved transient absorption spectroscopy of xanthophylls

Czech Academy of Sciences Publication Activity Database

Niedzwiedzki, D.; Sullivan, J.O.; Polívka, Tomáš; Birge, R.R.; Frank, H.A.

2006-01-01

Roč. 110, č. 45 (2006), s. 22872-22885 ISSN 1520-6106 Institutional research plan: CEZ:AV0Z50510513 Keywords : xanthophyll * spectroscopy study Subject RIV: BO - Biophysics Impact factor: 4.115, year: 2006

Single and double acceptor-levels of a carbon-hydrogen defect in n-type silicon

Energy Technology Data Exchange (ETDEWEB)

Stübner, R.; Scheffler, L.; Kolkovsky, Vl., E-mail: kolkov@ifpan.edu.pl; Weber, J. [Technische Universität Dresden, 01062 Dresden (Germany)

2016-05-28

In the present study, we discuss the origin of two dominant deep levels (E42 and E262) observed in n-type Si, which is subjected to hydrogenation by wet chemical etching or a dc H-plasma treatment. Their activation enthalpies determined from Laplace deep level transient spectroscopy measurements are E{sub C}-0.06 eV (E42) and E{sub C}-0.51 eV (E262). The similar annealing behavior and identical depth profiles of E42 and E262 correlate them with two different charge states of the same defect. E262 is attributed to a single acceptor state due to the absence of the Poole-Frenkel effect and the lack of a capture barrier for electrons. The emission rate of E42 shows a characteristic enhancement with the electric field, which is consistent with the assignment to a double acceptor state. In samples with different carbon and hydrogen content, the depth profiles of E262 can be explained by a defect with one H-atom and one C-atom. From a comparison with earlier calculations [Andersen et al., Phys. Rev. B 66, 235205 (2002)], we attribute E42 to the double acceptor and E262 to the single acceptor state of the CH{sub 1AB} configuration, where one H atom is directly bound to carbon in the anti-bonding position.

DRAFTS: A DEEP, RAPID ARCHIVAL FLARE TRANSIENT SEARCH IN THE GALACTIC BULGE

International Nuclear Information System (INIS)

Osten, Rachel A.; Sahu, Kailash; Kowalski, Adam; Hawley, Suzanne L.

2012-01-01

We utilize the Sagittarius Window Eclipsing Extrasolar Planet Search Hubble Space Telescope/Advanced Camera for Surveys data set for a Deep Rapid Archival Flare Transient Search to constrain the flare rate toward the older stellar population in the Galactic bulge. During seven days of monitoring 229,293 stars brighter than V = 29.5, we find evidence for flaring activity in 105 stars between V = 20 and V = 28. We divided the sample into non-variable stars and variable stars whose light curves contain large-scale variability. The flare rate on variable stars is ∼700 times that of non-variable stars, with a significant correlation between the amount of underlying stellar variability and peak flare amplitude. The flare energy loss rates are generally higher than those of nearby well-studied single dMe flare stars. The distribution of proper motions is consistent with the flaring stars being at the distance and age of the Galactic bulge. If they are single dwarfs, then they span a range of ≈1.0-0.25 M ☉ . A majority of the flaring stars exhibit periodic photometric modulations with P < 3 days. If these are tidally locked magnetically active binary systems, then their fraction in the bulge is enhanced by a factor of ∼20 compared to the local value. These stars may be useful for placing constraints on the angular momentum evolution of cool close binary stars. Our results expand the type of stars studied for flares in the optical band, and suggest that future sensitive optical time-domain studies will have to contend with a larger sample of flaring stars than the M dwarf flare stars usually considered.

Defect spectroscopy of single ZnO microwires

Science.gov (United States)

Villafuerte, M.; Ferreyra, J. M.; Zapata, C.; Barzola-Quiquia, J.; Iikawa, F.; Esquinazi, P.; Heluani, S. P.; de Lima, M. M.; Cantarero, A.

2014-04-01

The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 × 1018 cm-3. This combination of techniques allows us to study the band gap values and defects states inside the gap in single ZnO microwires and opens the possibility to be used as a defect spectroscopy method.

Charge Transient, Electrochemical and Impedance Measurements as Tools for Characterization of Nano-Heterostructural Organic/Inorganic Semiconductors

Czech Academy of Sciences Publication Activity Database

Schauer, F.; Nadáždy, V.; Gmucová, K.; Weiss, M.; Kuřitka, I.; Rohovec, Jan; Toušek, J.; Toušková, J.; Lányi, Š.

2013-01-01

Roč. 5, č. 4 (2013), s. 439-443 ISSN 1941-4900 Institutional support: RVO:67985831 Keywords : charge transient spectroscopy * electrochemical spectroscopy * electron structure spectroscopy * organic materials electron structure Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.444, year: 2013

Study of grown-in and radiation-induced defects in indium phosphide

International Nuclear Information System (INIS)

Shaban, E.H.

1986-01-01

This research is focused on (1) conducting detailed theoretical and experimental study of grown-in and radiation-induced defects in liquid encapsulated Czohralski (LEC) grown, Zn-doped P-type indium phosphide (InP), (2) identifying the physical origin of the defects detected using Deep Level Transient Spectroscopy (DLTS) method, and (3) and developing a second-order model to interpret the presence of nonexponential capacitance transients in DLTS method. Analysis of grown-in and radiation-induced defects in P-type InP is undertaken. The main research results are summarized as follows: (1) DLTS analysis of grown-in defects in liquid LEC-grown, Zn-doped, P-type InP is made in this study. A single-hole trap of E/sub v/ + 0.52 eV is detected with a trap density of 1.8 x 10 15 cm -3 . The physical origin of this hole trap is attributed to a phosphorus vacancy or phosphorus interstitial-related defect. (2) One-MeV electron-irradiated P-type InP introduced two new hole traps, namely E/sub v/ + 0.34 and E/sub v/ + 0.58 eV with introduction rates (dN/sub T/d phi) of 0.4 and 1.2 per electron-cm, respectively. (3) A theoretical model is developed to interpret nonexponential capacitance transients in a deep-level transient spectroscopy method when the capture process competes with the dominant thermal-emission process

Multi-level deep supervised networks for retinal vessel segmentation.

Science.gov (United States)

Mo, Juan; Zhang, Lei

2017-12-01

Changes in the appearance of retinal blood vessels are an important indicator for various ophthalmologic and cardiovascular diseases, including diabetes, hypertension, arteriosclerosis, and choroidal neovascularization. Vessel segmentation from retinal images is very challenging because of low blood vessel contrast, intricate vessel topology, and the presence of pathologies such as microaneurysms and hemorrhages. To overcome these challenges, we propose a neural network-based method for vessel segmentation. A deep supervised fully convolutional network is developed by leveraging multi-level hierarchical features of the deep networks. To improve the discriminative capability of features in lower layers of the deep network and guide the gradient back propagation to overcome gradient vanishing, deep supervision with auxiliary classifiers is incorporated in some intermediate layers of the network. Moreover, the transferred knowledge learned from other domains is used to alleviate the issue of insufficient medical training data. The proposed approach does not rely on hand-crafted features and needs no problem-specific preprocessing or postprocessing, which reduces the impact of subjective factors. We evaluate the proposed method on three publicly available databases, the DRIVE, STARE, and CHASE_DB1 databases. Extensive experiments demonstrate that our approach achieves better or comparable performance to state-of-the-art methods with a much faster processing speed, making it suitable for real-world clinical applications. The results of cross-training experiments demonstrate its robustness with respect to the training set. The proposed approach segments retinal vessels accurately with a much faster processing speed and can be easily applied to other biomedical segmentation tasks.

Deep Levels of Processing Elicit a Distinctiveness Heuristic: Evidence from the Criterial Recollection Task

Science.gov (United States)

Gallo, David A.; Meadow, Nathaniel G.; Johnson, Elizabeth L.; Foster, Katherine T.

2008-01-01

Thinking about the meaning of studied words (deep processing) enhances memory on typical recognition tests, relative to focusing on perceptual features (shallow processing). One explanation for this levels-of-processing effect is that deep processing leads to the encoding of more distinctive representations (i.e., more unique semantic or…

Human-level control through deep reinforcement learning

Science.gov (United States)

Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A.; Veness, Joel; Bellemare, Marc G.; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K.; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

2015-02-01

The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

Human-level control through deep reinforcement learning.

Science.gov (United States)

Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A; Veness, Joel; Bellemare, Marc G; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

2015-02-26

The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

NMR paves the way for atomic level descriptions of sparsely populated, transiently formed biomolecular conformers.

Science.gov (United States)

Sekhar, Ashok; Kay, Lewis E

2013-08-06

The importance of dynamics to biomolecular function is becoming increasingly clear. A description of the structure-function relationship must, therefore, include the role of motion, requiring a shift in paradigm from focus on a single static 3D picture to one where a given biomolecule is considered in terms of an ensemble of interconverting conformers, each with potentially diverse activities. In this Perspective, we describe how recent developments in solution NMR spectroscopy facilitate atomic resolution studies of sparsely populated, transiently formed biomolecular conformations that exchange with the native state. Examples of how this methodology is applied to protein folding and misfolding, ligand binding, and molecular recognition are provided as a means of illustrating both the power of the new techniques and the significant roles that conformationally excited protein states play in biology.

Transient Go: A Mobile App for Transient Astronomy Outreach

Science.gov (United States)

Crichton, D.; Mahabal, A.; Djorgovski, S. G.; Drake, A.; Early, J.; Ivezic, Z.; Jacoby, S.; Kanbur, S.

2016-12-01

Augmented Reality (AR) is set to revolutionize human interaction with the real world as demonstrated by the phenomenal success of `Pokemon Go'. That very technology can be used to rekindle the interest in science at the school level. We are in the process of developing a prototype app based on sky maps that will use AR to introduce different classes of astronomical transients to students as they are discovered i.e. in real-time. This will involve transient streams from surveys such as the Catalina Real-time Transient Survey (CRTS) today and the Large Synoptic Survey Telescope (LSST) in the near future. The transient streams will be combined with archival and latest image cut-outs and other auxiliary data as well as historical and statistical perspectives on each of the transient types being served. Such an app could easily be adapted to work with various NASA missions and NSF projects to enrich the student experience.

Time-resolved single-shot terahertz time-domain spectroscopy for ultrafast irreversible processes

Science.gov (United States)

Zhai, Zhao-Hui; Zhong, Sen-Cheng; Li, Jun; Zhu, Li-Guo; Meng, Kun; Li, Jiang; Liu, Qiao; Peng, Qi-Xian; Li, Ze-Ren; Zhao, Jian-Heng

2016-09-01

Pulsed terahertz spectroscopy is suitable for spectroscopic diagnostics of ultrafast events. However, the study of irreversible or single shot ultrafast events requires ability to record transient properties at multiple time delays, i.e., time resolved at single shot level, which is not available currently. Here by angular multiplexing use of femtosecond laser pulses, we developed and demonstrated a time resolved, transient terahertz time domain spectroscopy technique, where burst mode THz pulses were generated and then detected in a single shot measurement manner. The burst mode THz pulses contain 2 sub-THz pulses, and the time gap between them is adjustable up to 1 ns with picosecond accuracy, thus it can be used to probe the single shot event at two different time delays. The system can detect the sub-THz pulses at 0.1 THz-2.5 THz range with signal to noise ratio (SNR) of ˜400 and spectrum resolution of 0.05 THz. System design was described here, and optimizations of single shot measurement of THz pulses were discussed in detail. Methods to improve SNR were also discussed in detail. A system application was demonstrated where pulsed THz signals at different time delays of the ultrafast process were successfully acquired within single shot measurement. This time resolved transient terahertz time domain spectroscopy technique provides a new diagnostic tool for irreversible or single shot ultrafast events where dynamic information can be extracted at terahertz range within one-shot experiment.

Calibration of the ISOLDE acceleration voltage using a high-precision voltage divider and applying collinear fast beam laser spectroscopy

CERN Document Server

Krieger, A.; Catherall, R.; Hochschulz, F.; Kramer, J.; Neugart, R.; Rosendahl, S.; Schipper, J.; Siesling, E.; Weinheimer, Ch.; Yordanov, D.T.; Nortershauser, W.

2011-01-01

A high-voltage divider with accuracy at the ppm level and collinear laser spectroscopy were used to calibrate the highvoltage installation at the radioactive ion beam facility ISOLDE at CERN. The accurate knowledge of this voltage is particularly important for collinear laser spectroscopy measurements. Beam velocity measurements using frequencycomb based collinear laser spectroscopy agree with the new calibration. Applying this, one obtains consistent results for isotope shifts of stable magnesium isotopes measured using collinear spectroscopy and laser spectroscopy on laser-cooled ions in a trap. The long-term stability and the transient behavior during recovery from a voltage dropout were investigated for the different power supplies currently applied at ISOLDE.

Excited-State Dynamics of Carotenoids Studied by Femtosecond Transient Absorption Spectroscopy

International Nuclear Information System (INIS)

Lee, Ingu; Pang, Yoonsoo; Lee, Sebok

2014-01-01

Carotenoids, natural antenna pigments in photosynthesis share a symmetric backbone of conjugated polyenes. Contrary to the symmetric and almost planar geometries of carotenoids, excited state structure and dynamics of carotenoids are exceedingly complex. In this paper, recent infrared and visible transient absorption measurements and excitation dependent dynamics of 8'-apo-β-caroten-8'-al and 7',7'-dicyano-7'-apo-β-carotene will be reviewed. The recent visible transient absorption measurements of 8'-apo-β-caroten-8'-al in polar and nonpolar solvents will also be introduced to emphasize the complex excited-state dynamics and unsolved problems in the S 2 and S 1 excited states

Enhancing the Radio Astronomy Capabilities at NASA's Deep Space Network

Science.gov (United States)

Lazio, Joseph; Teitelbaum, Lawrence; Franco, Manuel M.; Garcia-Miro, Cristina; Horiuchi, Shinji; Jacobs, Christopher; Kuiper, Thomas; Majid, Walid

2015-08-01

NASA's Deep Space Network (DSN) is well known for its role in commanding and communicating with spacecraft across the solar system that produce a steady stream of new discoveries in Astrophysics, Heliophysics, and Planetary Science. Equipped with a number of large antennas distributed across the world, the DSN also has a history of contributing to a number of leading radio astronomical projects. This paper summarizes a number of enhancements that are being implemented currently and that are aimed at increasing its capabilities to engage in a wide range of science observations. These enhancements include* A dual-beam system operating between 18 and 27 GHz (~ 1 cm) capable of conducting a variety of molecular line observations, searches for pulsars in the Galactic center, and continuum flux density (photometry) of objects such as nearby protoplanetary disks* Enhanced spectroscopy and pulsar processing backends for use at 1.4--1.9 GHz (20 cm), 18--27 GHz (1 cm), and 38--50 GHz (0.7 cm)* The DSN Transient Observatory (DTN), an automated, non-invasive backend for transient searching* Larger bandwidths (>= 0.5 GHz) for pulsar searching and timing; and* Improved data rates (2048 Mbps) and better instrumental response for very long baseline interferometric (VLBI) observations with the new DSN VLBI processor (DVP), which is providing unprecedented sensitivity for maintenance of the International Celestial Reference Frame (ICRF) and development of future versions.One of the results of these improvements is that the 70~m Deep Space Station 43 (DSS-43, Tidbinbilla antenna) is now the most sensitive radio antenna in the southern hemisphere. Proposals to use these systems are accepted from the international community.Part of this research was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics & Space Administration.

Recalling the origins of DLTS

International Nuclear Information System (INIS)

Lang, David V.

2007-01-01

This paper recalls the events leading up to the author's 1973 discovery of Deep Level Transient Spectroscopy (DLTS). It discusses the status of junction capacitance techniques in the late 1960s and points out why the typical capacitance instrumentation of that era would not have lead the author to the DLTS discovery. This discovery is discussed in the context of the novel NMR-inspired instrumentation used by the author to study fast capacitance transients of the ZnO center in GaP LEDs. Finally, the author makes some general comments about the innovation process

Deep geologic storage of high level radioactive wastes: conceptual generic designs

International Nuclear Information System (INIS)

1995-01-01

This report summarizes the studies on deep geologic storage of radioactive wastes and specially for the high-level radioactive wastes. The study is focussed to the geotechnical assessment and generic-conceptual designs. Methodology analysis, geotechnical feasibility, costs and operation are studied

The Transient High Energy Sky and Early Universe Surveyor

Science.gov (United States)

O'Brien, P. T.

2016-04-01

The Transient High Energy Sky and Early Universe Surveyor is a mission which will be proposed for the ESA M5 call. THESEUS will address multiple components in the Early Universe ESA Cosmic Vision theme:4.1 Early Universe,4.2 The Universe taking shape, and4.3 The evolving violent Universe.THESEUS aims at vastly increasing the discovery space of the high energy transient phenomena over the entire cosmic history. This is achieved via a unique payload providing an unprecedented combination of: (i) wide and deep sky monitoring in a broad energy band(0.3 keV-20 MeV; (ii) focusing capabilities in the soft X-ray band granting large grasp and high angular resolution; and (iii) on board near-IR capabilities for immediate transient identification and first redshift estimate.The THESEUS payload consists of: (i) the Soft X--ray Imager (SXI), a set of Lobster Eye (0.3--6 keV) telescopes with CCD detectors covering a total FOV of 1 sr; (ii) the X--Gamma-rays spectrometer (XGS), a non-imaging spectrometer (XGS) based on SDD+CsI, covering the same FOV than the Lobster telescope extending the THESEUS energy band up to 20 MeV; and (iii) a 70cm class InfraRed Telescope (IRT) observing up to 2 microns with imaging and moderate spectral capabilities.The main scientific goals of THESEUS are to:(a) Explore the Early Universe (cosmic dawn and reionization era) by unveiling the Gamma--Ray Burst (GRBs) population in the first billion years}, determining when did the first stars form, and investigating the re-ionization epoch, the interstellar medium (ISM) and the intergalactic medium (IGM) at high redshifts.(b) Perform an unprecedented deep survey of the soft X-ray transient Universe in order to fill the present gap in the discovery space of new classes of transient; provide a fundamental step forward in the comprehension of the physics of various classes of Galactic and extra--Galactic transients, and provide real time trigger and accurate locations of transients for follow-up with next

DeepPy: Pythonic deep learning

DEFF Research Database (Denmark)

Larsen, Anders Boesen Lindbo

This technical report introduces DeepPy – a deep learning framework built on top of NumPy with GPU acceleration. DeepPy bridges the gap between highperformance neural networks and the ease of development from Python/NumPy. Users with a background in scientific computing in Python will quickly...... be able to understand and change the DeepPy codebase as it is mainly implemented using high-level NumPy primitives. Moreover, DeepPy supports complex network architectures by letting the user compose mathematical expressions as directed graphs. The latest version is available at http...

High levels of natural radionuclides in a deep-sea infaunal xenophyophore

Energy Technology Data Exchange (ETDEWEB)

Swinbanks, D D; Shirayama, Y

1986-03-27

The paper concerns the high levels of natural radionuclides in a deep-sea infaunal xenophyophore from the Izu-Ogasawara Trench. Measured /sup 210/Po activities and barium contents of various parts of Occultammina profunda and the surrounding sediment are given, together with their estimated /sup 210/Pb and /sup 226/Ra activities. The data suggest that xenophyphores are probably subject to unusually high levels of natural radiation.

Photoelectron spectroscopy

International Nuclear Information System (INIS)

Price, W.C.

1974-01-01

A survey is given of the development of x-ray and ultraviolet photoelectron spectroscopy. Applications of photoelectron spectroscopy to studies of atomic electronic configurations are discussed, including photoelectron spectra of hydrides isoelectronic with the inert gases; photoelectron spectra of the halogen derivatives of methane; photoelectron spectra of multiple bonded diatomic molecules; spectra and structure of some multiple bonded polyatomic molecules; spectra and structure of triatomic molecules; and methods of orbital assignment of bands in photoelectron spectra. Physical aspects are considered, including intensities; selection rules; dependence of cross section on photoelectron energy; autoionization; angular distribution of photoelectrons; electron-molecule interactions; and transient species. (26 figures, 54 references) (U.S.)

Application of Moessbauer spectroscopy to the study of neptunium adsorbed on deep-sea sediments

International Nuclear Information System (INIS)

Bennett, B.A.; Rees, L.V.C.

1987-03-01

A Neptunium Moessbauer spectrometer (the first in Great Britain) was constructed and the Moessbauer spectra of NpAl Laves phase alloy obtained. Neptunium was sorbed onto a calcareous deep-sea sediment from sea water, using a successive-loading technique. Sorption appeared to be by an equilibrium reaction, and because of the low solubility of neptunium in seawater, this meant that the maximum loading that could be achieved was 8mg 237 Np/g sediment. This proved to be an adequate concentration for Moessbauer measurements and a Moessbauer spectrum was obtained. This showed that most of the neptunium was in exchange sites and not present as precipitates of neptunium compounds. It was probably in the 4+ state indicating that reduction had occurred during sorption. This work has demonstrated that Moessbauer Spectroscopy has great potential as an aid to understanding the mechanism of actinide sorption in natural systems. (author)

Production of Rare Earth Isotope Beams for Radiotracer-DLTS on SiC

CERN Multimedia

2002-01-01

Electrical properties of semiconductors are extremely sensitive to minor traces of impurities and defects. This fact allows to intentionally modify material properties and is thus the very basis of semiconductor electronics and optoelectronics. In the present project, electronic properties and doping effects of rare-earth elements in the technologically important semiconductor SiC are to be investigated using optical and electrical characterization techniques like Photoluminescence, Deep Level Transient Spectroscopy and Thermal Admittance Spectroscopy. By using the elemental transmutation of radioactive isotopes as a tracer, it will be guaranteed that the impurity-related band gap states can definitively be distinguished from intrinsic or process-induced defects. For SiC up to now only detailed investigation of Er- related deep levels have been reported, preliminary data exist for Sm- and Gd- impurities. In this project we propose the implantation of Pr and Eu isotopes for detailed level studies.

SPIRITS: Uncovering Unusual Infrared Transients with Spitzer

International Nuclear Information System (INIS)

Kasliwal, Mansi M.; Jencson, Jacob E.; Tinyanont, Samaporn; Cao, Yi; Cook, David; Bally, John; Masci, Frank; Armus, Lee; Cody, Ann Marie; Bond, Howard E.; Contreras, Carlos; Dykhoff, Devin A.; Amodeo, Samuel; Carlon, Robert L.; Cass, Alexander C.; Corgan, David T.; Faella, Joseph; Boyer, Martha; Cantiello, Matteo; Fox, Ori D.

2017-01-01

We present an ongoing, five-year systematic search for extragalactic infrared transients, dubbed SPIRITS—SPitzer InfraRed Intensive Transients Survey. In the first year, using Spitzer /IRAC, we searched 190 nearby galaxies with cadence baselines of one month and six months. We discovered over 1958 variables and 43 transients. Here, we describe the survey design and highlight 14 unusual infrared transients with no optical counterparts to deep limits, which we refer to as SPRITEs (eSPecially Red Intermediate-luminosity Transient Events). SPRITEs are in the infrared luminosity gap between novae and supernovae, with [4.5] absolute magnitudes between −11 and −14 (Vega-mag) and [3.6]–[4.5] colors between 0.3 mag and 1.6 mag. The photometric evolution of SPRITEs is diverse, ranging from <0.1 mag yr −1 to >7 mag yr −1 . SPRITEs occur in star-forming galaxies. We present an in-depth study of one of them, SPIRITS 14ajc in Messier 83, which shows shock-excited molecular hydrogen emission. This shock may have been triggered by the dynamic decay of a non-hierarchical system of massive stars that led to either the formation of a binary or a protostellar merger.

SPIRITS: Uncovering Unusual Infrared Transients with Spitzer

Energy Technology Data Exchange (ETDEWEB)

Kasliwal, Mansi M.; Jencson, Jacob E.; Tinyanont, Samaporn; Cao, Yi; Cook, David [Division of Physics, Mathematics and Astronomy, California Institute of Technology, Pasadena, CA 91125 (United States); Bally, John [Center for Astrophysics and Space Astronomy, University of Colorado, 389 UCB, Boulder, CO 80309 (United States); Masci, Frank; Armus, Lee [Infrared Processing and Analysis Center, California Institute of Technology, Pasadena, CA 91125 (United States); Cody, Ann Marie [NASA Ames Research Center, Moffett Field, CA 94035 (United States); Bond, Howard E. [Dept. of Astronomy and Astrophysics, Pennsylvania State University, University Park, PA 16802 (United States); Contreras, Carlos [Las Campanas Observatory, Carnegie Observatories, Casilla 601, La Serena (Chile); Dykhoff, Devin A.; Amodeo, Samuel; Carlon, Robert L.; Cass, Alexander C.; Corgan, David T.; Faella, Joseph [Minnesota Institute for Astrophysics, School of Physics and Astronomy, 116 Church Street, S. E., University of Minnesota, Minneapolis, MN 55455 (United States); Boyer, Martha [NASA Goddard Space Flight Center, MC 665, 8800 Greenbelt Road, Greenbelt, MD 20771 (United States); Cantiello, Matteo [Center for Computational Astrophysics, Flatiron Institute, 162 Fifth Avenue, New York, NY 10010 (United States); Fox, Ori D. [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); and others

2017-04-20

We present an ongoing, five-year systematic search for extragalactic infrared transients, dubbed SPIRITS—SPitzer InfraRed Intensive Transients Survey. In the first year, using Spitzer /IRAC, we searched 190 nearby galaxies with cadence baselines of one month and six months. We discovered over 1958 variables and 43 transients. Here, we describe the survey design and highlight 14 unusual infrared transients with no optical counterparts to deep limits, which we refer to as SPRITEs (eSPecially Red Intermediate-luminosity Transient Events). SPRITEs are in the infrared luminosity gap between novae and supernovae, with [4.5] absolute magnitudes between −11 and −14 (Vega-mag) and [3.6]–[4.5] colors between 0.3 mag and 1.6 mag. The photometric evolution of SPRITEs is diverse, ranging from <0.1 mag yr{sup −1} to >7 mag yr{sup −1}. SPRITEs occur in star-forming galaxies. We present an in-depth study of one of them, SPIRITS 14ajc in Messier 83, which shows shock-excited molecular hydrogen emission. This shock may have been triggered by the dynamic decay of a non-hierarchical system of massive stars that led to either the formation of a binary or a protostellar merger.

Annealing of the Sb-vacancy and a closely related radiation induced defect in n-type germanium

Science.gov (United States)

Barnard, Abraham W.; Auret, F. D.; Meyer, W. E.

2018-04-01

Deep level transient spectroscopy was used to study the defects induced by alpha-particle irradiation from an Am241 source in antimony doped n-type germanium. Previous investigations of the well know Sb-vacancy defect have led to the discovery of a second defect with very similar emission properties, referred to as the E‧. Although both defects have similar emission rates, they have very different annealing properties. In this study we further investigated these properties of the E‧ in Sb doped samples irradiated at 270 K with alpha particles from an Am241 source. Laplace deep level transient spectroscopy was used to determine the concentration of each defect. An isothermal annealing study of the E‧ was carried out in the temperature range 300 K to 325 K in 5 K increments, while the Sb-vacancy was annealed out completely at 410 K onwards, long after the E‧ was completely annealed out. The annealing activation energy was determined through isothermal annealing profiles for both the Sb-Vacancy and the E‧ as 1.05 eV and 0.73 eV respectively with a prefactor of 2.05 × 109 s-1 and 2.7 × 108 s-1.

Excited-State Dynamics of Carotenoids Studied by Femtosecond Transient Absorption Spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Lee, Ingu; Pang, Yoonsoo [Department of Physics and Photon Science, Gwangju (Korea, Republic of); Lee, Sebok [Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of)

2014-03-15

Carotenoids, natural antenna pigments in photosynthesis share a symmetric backbone of conjugated polyenes. Contrary to the symmetric and almost planar geometries of carotenoids, excited state structure and dynamics of carotenoids are exceedingly complex. In this paper, recent infrared and visible transient absorption measurements and excitation dependent dynamics of 8'-apo-β-caroten-8'-al and 7',7'-dicyano-7'-apo-β-carotene will be reviewed. The recent visible transient absorption measurements of 8'-apo-β-caroten-8'-al in polar and nonpolar solvents will also be introduced to emphasize the complex excited-state dynamics and unsolved problems in the S{sub 2} and S{sub 1} excited states.

Starvation and recovery in the deep-sea methanotroph Methyloprofundus sedimenti.

Science.gov (United States)

Tavormina, Patricia L; Kellermann, Matthias Y; Antony, Chakkiath Paul; Tocheva, Elitza I; Dalleska, Nathan F; Jensen, Ashley J; Valentine, David L; Hinrichs, Kai-Uwe; Jensen, Grant J; Dubilier, Nicole; Orphan, Victoria J

2017-01-01

In the deep ocean, the conversion of methane into derived carbon and energy drives the establishment of diverse faunal communities. Yet specific biological mechanisms underlying the introduction of methane-derived carbon into the food web remain poorly described, due to a lack of cultured representative deep-sea methanotrophic prokaryotes. Here, the response of the deep-sea aerobic methanotroph Methyloprofundus sedimenti to methane starvation and recovery was characterized. By combining lipid analysis, RNA analysis, and electron cryotomography, it was shown that M. sedimenti undergoes discrete cellular shifts in response to methane starvation, including changes in headgroup-specific fatty acid saturation levels, and reductions in cytoplasmic storage granules. Methane starvation is associated with a significant increase in the abundance of gene transcripts pertinent to methane oxidation. Methane reintroduction to starved cells stimulates a rapid, transient extracellular accumulation of methanol, revealing a way in which methane-derived carbon may be routed to community members. This study provides new understanding of methanotrophic responses to methane starvation and recovery, and lays the initial groundwork to develop Methyloprofundus as a model chemosynthesizing bacterium from the deep sea. © 2016 John Wiley & Sons Ltd.

Intracavity OptoGalvanic Spectroscopy not suitable for ambient level radiocarbon detection.

Science.gov (United States)

Paul, Dipayan; Meijer, Harro A J

2015-09-01

IntraCavity OptoGalvanic Spectroscopy as a radiocarbon detection technique was first reported by the Murnick group at Rutgers University, Newark, NJ, in 2008. This technique for radiocarbon detection was presented with tremendous potentials for applications in various fields of research. Significantly cheaper, this technique was portrayed as a possible complementary technique to the more expensive and complex accelerator mass spectrometry. Several groups around the world started developing this technique for various radiocarbon related applications. The IntraCavity OptoGalvanic Spectroscopy setup at the University of Groningen was constructed in 2012 in close collaboration with the Murnick group for exploring possible applications in the fields of radiocarbon dating and atmospheric monitoring. In this paper we describe a systematic evaluation of the IntraCavity OptoGalvanic Spectroscopy setup at Groningen for radiocarbon detection. Since the IntraCavity OptoGalvanic Spectroscopy setup was strictly planned for dating and atmospheric monitoring purposes, all the initial experiments were performed with CO2 samples containing contemporary levels and highly depleted levels of radiocarbon. Because of recurring failures in differentiating the two CO2 samples, with the radiocarbon concentration 3 orders of magnitude apart, CO2 samples containing elevated levels of radiocarbon were prepared in-house and experimented with. All results obtained thus far at Groningen are in sharp contrast to the results published by the Murnick group and rather support the results put forward by the Salehpour group at Uppsala University. From our extensive test work, we must conclude that the method is unsuited for ambient level radiocarbon measurements, and even highly enriched CO2 samples yield insignificant signal.

Composition Related Electrical Active Defect States of InGaAs and GaAsN

Directory of Open Access Journals (Sweden)

Arpad Kosa

2017-01-01

Full Text Available This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for solar cell applications. Main attention is focused on composition and growth condition dependent impurities and the investigation of their possible origins. For this purpose a widely utilized spectroscopy method, Deep Level Transient Fourier Spectroscopy, was utilized. The most significant responses of each sample labelled as InG2, InG3 and NG1, NG2 were discussed in detail and confirmed by simulations and literature data. The presence of a possible dual conduction type and dual state defect complex, dependent on the In/N composition, is reported. Beneficial characteristics of specific indium and nitrogen concentrations capable of eliminating or reducing certain point defects and dislocations are stated.

ELM-induced transient tungsten melting in the JET divertor

Science.gov (United States)

Coenen, J. W.; Arnoux, G.; Bazylev, B.; Matthews, G. F.; Autricque, A.; Balboa, I.; Clever, M.; Dejarnac, R.; Coffey, I.; Corre, Y.; Devaux, S.; Frassinetti, L.; Gauthier, E.; Horacek, J.; Jachmich, S.; Komm, M.; Knaup, M.; Krieger, K.; Marsen, S.; Meigs, A.; Mertens, Ph.; Pitts, R. A.; Puetterich, T.; Rack, M.; Stamp, M.; Sergienko, G.; Tamain, P.; Thompson, V.; Contributors, JET-EFDA

2015-02-01

The original goals of the JET ITER-like wall included the study of the impact of an all W divertor on plasma operation (Coenen et al 2013 Nucl. Fusion 53 073043) and fuel retention (Brezinsek et al 2013 Nucl. Fusion 53 083023). ITER has recently decided to install a full-tungsten (W) divertor from the start of operations. One of the key inputs required in support of this decision was the study of the possibility of W melting and melt splashing during transients. Damage of this type can lead to modifications of surface topology which could lead to higher disruption frequency or compromise subsequent plasma operation. Although every effort will be made to avoid leading edges, ITER plasma stored energies are sufficient that transients can drive shallow melting on the top surfaces of components. JET is able to produce ELMs large enough to allow access to transient melting in a regime of relevance to ITER. Transient W melt experiments were performed in JET using a dedicated divertor module and a sequence of IP = 3.0 MA/BT = 2.9 T H-mode pulses with an input power of PIN = 23 MW, a stored energy of ˜6 MJ and regular type I ELMs at ΔWELM = 0.3 MJ and fELM ˜ 30 Hz. By moving the outer strike point onto a dedicated leading edge in the W divertor the base temperature was raised within ˜1 s to a level allowing transient, ELM-driven melting during the subsequent 0.5 s. Such ELMs (δW ˜ 300 kJ per ELM) are comparable to mitigated ELMs expected in ITER (Pitts et al 2011 J. Nucl. Mater. 415 (Suppl.) S957-64). Although significant material losses in terms of ejections into the plasma were not observed, there is indirect evidence that some small droplets (˜80 µm) were released. Almost 1 mm (˜6 mm3) of W was moved by ˜150 ELMs within 7 subsequent discharges. The impact on the main plasma parameters was minor and no disruptions occurred. The W-melt gradually moved along the leading edge towards the high-field side, driven by j × B forces. The evaporation rate determined

Transient photoelectron spectroscopy of the dissociative Br2(1Piu) state.

Science.gov (United States)

Strasser, Daniel; Goulay, Fabien; Leone, Stephen R

2007-11-14

Photodissociation of bromine on the Br2(1Piu) state is probed with ultrafast extreme ultraviolet (53.7 nm) single-photon ionization. Time-resolved photoelectron spectra show simultaneously the depletion of ground state bromine molecules as well as the rise of Br(2P3/2) products due to 402.5 nm photolysis. A partial photoionization cross-section ratio of atomic versus molecular bromine is obtained. Transient photoelectron spectra of a dissociative wave packet on the excited state are presented in the limit of low-power-density, single-photon excitation to the dissociative state. Transient binding energy shifts of "atomic-like" photoelectron peaks are observed and interpreted as photoionization of nearly separated Br atom pairs on the Br2(1Piu) state to repulsive dissociative ionization states.

Electron capture cross-section of Au-Fe complex in silicon

International Nuclear Information System (INIS)

Ali, Akbar; Shafi, M; Majid, Abdul

2006-01-01

A deep level transient spectroscopy technique is applied to study the capture cross-section of an iron-gold complex. The thermal ionization energy obtained from emission rate data is found to be E c -0.36 eV. The Au-Fe complex is a single defect having a capture cross-section of 2.48x10 -16 cm 2 for electrons which is independent of temperature

Ionization and dissociation dynamics of vinyl bromide probed by femtosecond extreme ultraviolet transient absorption spectroscopy

International Nuclear Information System (INIS)

Lin, Ming-Fu; Neumark, Daniel M.; Gessner, Oliver; Leone, Stephen R.

2014-01-01

Strong-field induced ionization and dissociation dynamics of vinyl bromide, CH 2 =CHBr, are probed using femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy. Strong-field ionization is initiated with an intense femtosecond, near infrared (NIR, 775 nm) laser field. Femtosecond XUV pulses covering the photon energy range of 50-72 eV probe the subsequent dynamics by measuring the time-dependent spectroscopic features associated with transitions of the Br (3d) inner-shell electrons to vacancies in molecular and atomic valence orbitals. Spectral signatures are observed for the depletion of neutral C 2 H 3 Br, the formation of C 2 H 3 Br + ions in their ground (X ~ ) and first excited (A ~ ) states, the production of C 2 H 3 Br ++ ions, and the appearance of neutral Br ( 2 P 3/2 ) atoms by dissociative ionization. The formation of free Br ( 2 P 3/2 ) atoms occurs on a timescale of 330 ± 150 fs. The ionic A ~ state exhibits a time-dependent XUV absorption energy shift of ∼0.4 eV within the time window of the atomic Br formation. The yield of Br atoms correlates with the yield of parent ions in the A ~ state as a function of NIR peak intensity. The observations suggest that a fraction of vibrationally excited C 2 H 3 Br + (A ~ ) ions undergoes intramolecular vibrational energy redistribution followed by the C–Br bond dissociation. The C 2 H 3 Br + (X ~ ) products and the majority of the C 2 H 3 Br ++ ions are relatively stable due to a deeper potential well and a high dissociation barrier, respectively. The results offer powerful new insights about orbital-specific electronic processes in high field ionization, coupled vibrational relaxation and dissociation dynamics, and the correlation of valence hole-state location and dissociation in polyatomic molecules, all probed simultaneously by ultrafast table-top XUV spectroscopy

Calibration of the ISOLDE acceleration voltage using a high-precision voltage divider and applying collinear fast beam laser spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Krieger, A., E-mail: kriegea@uni-mainz.d [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); Geppert, Ch. [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, 64291 Darmstadt (Germany); Catherall, R. [CERN, CH-1211 Geneve 23 (Switzerland); Hochschulz, F. [Institut fuer Kernphysik, Universitaet Muenster, 48149 Muenster (Germany); Kraemer, J.; Neugart, R. [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); Rosendahl, S. [Institut fuer Kernphysik, Universitaet Muenster, 48149 Muenster (Germany); Schipper, J.; Siesling, E. [CERN, CH-1211 Geneve 23 (Switzerland); Weinheimer, Ch. [Institut fuer Kernphysik, Universitaet Muenster, 48149 Muenster (Germany); Yordanov, D.T. [Max-Planck-Institut fuer Kernphysik, 69117 Heidelberg (Germany); Noertershaeuser, W. [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, 64291 Darmstadt (Germany)

2011-03-11

A high-voltage divider with accuracy at the ppm level and collinear laser spectroscopy were used to calibrate the high-voltage installation at the radioactive ion beam facility ISOLDE at CERN. The accurate knowledge of this voltage is particularly important for collinear laser spectroscopy measurements. Beam velocity measurements using frequency-comb based collinear laser spectroscopy agree with the new calibration. Applying this, one obtains consistent results for isotope shifts of stable magnesium isotopes measured using collinear spectroscopy and laser spectroscopy on laser-cooled ions in a trap. The long-term stability and the transient behavior during recovery from a voltage dropout were investigated for the different power supplies currently applied at ISOLDE.

High-level radioactive waste disposal in the deep ocean

International Nuclear Information System (INIS)

Hill, H.W.

1977-01-01

A joint programme has begun between the Fisheries Laboratory, Lowestoft and the Institute of Oceanographic Sciences, Wormley to study the dispersion of radioactivity in the deep ocean arising from the possible dumping of high level waste on the sea bed in vitrified-glass form which would permit slow leakage over a long term scale. The programme consists firstly of the development of a simple diffusion/advection model for the dispersion of radioactivity in a closed and finite ocean, which overcomes many of the criticisms of the earlier model proposed by Webb and Morley. Preliminary results from this new model are comparable to those of the Webb-Morley model for radio isotopes with half-lives of 10-300 years but are considerably more restrictive outside this range, particularly for those which are much longer-lived. The second part of the programme, towards which the emphasis is directed, concerns the field programme planned to measure the advection and diffusion parameters in the deeper layers of the ocean to provide realistic input parameters to the model and increase our fundamental understanding of the environment in which the radioactive materials may be released. The first cruises of the programme will take place in late 1976 and involve deep current meter deployments and float dispersion experiments around the present NEA dump site with some sediment sampling, so that adsorption experiments can be started on typical deep sea sediments. The programme will expand the number of long-term deep moored stations over the next five years and include further float experiments, CTD profiling, and other physical oceanography. In the second half of the 5-year programme, attempts will be made to measure diffusion parameters in the deeper layers of the ocean using radioactive tracers

Improved Fast, Deep Record Length, Time-Resolved Visible Spectroscopy of Plasmas Using Fiber Grids

Science.gov (United States)

Brockington, S.; Case, A.; Cruz, E.; Williams, A.; Witherspoon, F. D.; Horton, R.; Klauser, R.; Hwang, D.

2017-10-01

HyperV Technologies is developing a fiber-coupled, deep record-length, low-light camera head for performing high time resolution spectroscopy on visible emission from plasma events. By coupling the output of a spectrometer to an imaging fiber bundle connected to a bank of amplified silicon photomultipliers, time-resolved spectroscopic imagers of 100 to 1,000 pixels can be constructed. A second generation prototype 32-pixel spectroscopic imager employing this technique was constructed and successfully tested at the University of California at Davis Compact Toroid Injection Experiment (CTIX). Pixel performance of 10 Megaframes/sec with record lengths of up to 256,000 frames ( 25.6 milliseconds) were achieved. Pixel resolution was 12 bits. Pixel pitch can be refined by using grids of 100 μm to 1000 μm diameter fibers. Experimental results will be discussed, along with future plans for this diagnostic. Work supported by USDOE SBIR Grant DE-SC0013801.

Deep impurity levels in n-type copper oxides

International Nuclear Information System (INIS)

Ovchinnikov, S.G.

1994-01-01

The density of Nd 2-x Ce x CuO 4 monoparticle states was calculated by the method of precise diagonalization of multielectron hamiltonian of 6-zone model for CuO cluster. Emergence of a deep impurity state of a symmetry in the middle of dielectric slit, which is a mixture of d z 2-states of copper and a 1 -molecular orbital of oxygen, is shown. Fluctuation of parameters of p-d jump and energies of charge transfer provide additional fine impurity levels near the bottom of conductivity zone and ceiling of valency zone. 30 refs., 4 figs

Deep geologic repository for low and intermediate radioactive level waste in Canada

International Nuclear Information System (INIS)

Liu Jianqin; Li Honghui; Sun Qinghong; Yang Zhongtian

2012-01-01

Ontario Power Generation (OPG) is undergoing a project for the long-term management of low and intermediate level waste (LILW)-a deep geologic repository (DGR) project for low and intermediate level waste. The waste source term disposed, geologic setting, repository layout and operation, and safety assessment are discussed. It is expected to provide reference for disposal of low and intermediate level waste that contain the higher concentration of long-lived radionuclides in China. (authors)

A case of severe transient hyperammonemia in a newborn

Directory of Open Access Journals (Sweden)

Min Woo Hwang

2010-04-01

Full Text Available Transient hyperammonemia in a newborn is an overwhelming disease manifested by hyperammonemic coma. The majority of affected newborns are premature and have mild respiratory syndrome. The diagnosis may be difficult to determine. This metabolic disorder is primarily characterized by severe hyperammonemia in the postnatal period, coma, absence of abnormal organic aciduria and normal activity of the enzymes of the urea cycle. Hyperammonemic coma may develop within 2-3 days of life, although its etiology is unknown. Laboratory studies reveal marked hyperammonemia (&gt;4,000 &micro;mol/ L. The degree of neurologic impairment and developmental delay in this disorder depends on the duration of hyperammonemic coma. Moreover, the infant may succumb to the disease if treatment is not started immediately and continued vigorously. Hyperammonemic coma as a medical emergency requires dialysis therapy. Here, we report a case of severe transient hyperammonemia in a preterm infant (35 week of gestation presented with respiratory distress, seizure, and deep coma within 48 hours and required ventilatory assistance and marked elevated plasma ammonia levels. He survived with aggressive therapy including peritoneal dialysis, and was followed 2 years later without sequelae.

Reference design and operations for deep borehole disposal of high-level radioactive waste

International Nuclear Information System (INIS)

Herrick, Courtney Grant; Brady, Patrick Vane; Pye, Steven; Arnold, Bill Walter; Finger, John Travis; Bauer, Stephen J.

2011-01-01

A reference design and operational procedures for the disposal of high-level radioactive waste in deep boreholes have been developed and documented. The design and operations are feasible with currently available technology and meet existing safety and anticipated regulatory requirements. Objectives of the reference design include providing a baseline for more detailed technical analyses of system performance and serving as a basis for comparing design alternatives. Numerous factors suggest that deep borehole disposal of high-level radioactive waste is inherently safe. Several lines of evidence indicate that groundwater at depths of several kilometers in continental crystalline basement rocks has long residence times and low velocity. High salinity fluids have limited potential for vertical flow because of density stratification and prevent colloidal transport of radionuclides. Geochemically reducing conditions in the deep subsurface limit the solubility and enhance the retardation of key radionuclides. A non-technical advantage that the deep borehole concept may offer over a repository concept is that of facilitating incremental construction and loading at multiple perhaps regional locations. The disposal borehole would be drilled to a depth of 5,000 m using a telescoping design and would be logged and tested prior to waste emplacement. Waste canisters would be constructed of carbon steel, sealed by welds, and connected into canister strings with high-strength connections. Waste canister strings of about 200 m length would be emplaced in the lower 2,000 m of the fully cased borehole and be separated by bridge and cement plugs. Sealing of the upper part of the borehole would be done with a series of compacted bentonite seals, cement plugs, cement seals, cement plus crushed rock backfill, and bridge plugs. Elements of the reference design meet technical requirements defined in the study. Testing and operational safety assurance requirements are also defined. Overall

Reference design and operations for deep borehole disposal of high-level radioactive waste.

Energy Technology Data Exchange (ETDEWEB)

Herrick, Courtney Grant; Brady, Patrick Vane; Pye, Steven; Arnold, Bill Walter; Finger, John Travis; Bauer, Stephen J.

2011-10-01

A reference design and operational procedures for the disposal of high-level radioactive waste in deep boreholes have been developed and documented. The design and operations are feasible with currently available technology and meet existing safety and anticipated regulatory requirements. Objectives of the reference design include providing a baseline for more detailed technical analyses of system performance and serving as a basis for comparing design alternatives. Numerous factors suggest that deep borehole disposal of high-level radioactive waste is inherently safe. Several lines of evidence indicate that groundwater at depths of several kilometers in continental crystalline basement rocks has long residence times and low velocity. High salinity fluids have limited potential for vertical flow because of density stratification and prevent colloidal transport of radionuclides. Geochemically reducing conditions in the deep subsurface limit the solubility and enhance the retardation of key radionuclides. A non-technical advantage that the deep borehole concept may offer over a repository concept is that of facilitating incremental construction and loading at multiple perhaps regional locations. The disposal borehole would be drilled to a depth of 5,000 m using a telescoping design and would be logged and tested prior to waste emplacement. Waste canisters would be constructed of carbon steel, sealed by welds, and connected into canister strings with high-strength connections. Waste canister strings of about 200 m length would be emplaced in the lower 2,000 m of the fully cased borehole and be separated by bridge and cement plugs. Sealing of the upper part of the borehole would be done with a series of compacted bentonite seals, cement plugs, cement seals, cement plus crushed rock backfill, and bridge plugs. Elements of the reference design meet technical requirements defined in the study. Testing and operational safety assurance requirements are also defined. Overall

Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

Science.gov (United States)

Douglas, Anna; Muralidharan, Nitin; Carter, Rachel; Share, Keith; Pint, Cary L.

2016-03-01

Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics. Electronic supplementary information (ESI) available: (i) Experimental details for ALD and material fabrication, ellipsometry film thickness, preparation of gel electrolyte and separator, details for electrochemical measurements, HRTEM image of VOx coated porous silicon, Raman spectroscopy for VOx as-deposited as well as annealed in air for 1 hour at 450 °C, SEM and transient behavior dissolution tests of uniformly coated VOx on

Laser magnetic resonance spectroscopy

International Nuclear Information System (INIS)

Ferrari, C.A.

1985-01-01

The technique of laser resonance magnetic resonance allows one to study the high-resolution spectroscopy of transient paramagnetic species, viz, atoms, radicals, and molecular ions. This article is a brief exposition of the method, describing the principles, instrumentation and applicability of the IR and FIR-LMR and shows results of HF + . (Author) [pt

Electron capture cross-section of Au-Fe complex in silicon

Energy Technology Data Exchange (ETDEWEB)

Ali, Akbar; Shafi, M; Majid, Abdul [Advance Materials Physics Laboratory, Department of Physics, Quaid-i-Azam University, Islamabad (Pakistan)

2006-10-15

A deep level transient spectroscopy technique is applied to study the capture cross-section of an iron-gold complex. The thermal ionization energy obtained from emission rate data is found to be E{sub c} -0.36 eV. The Au-Fe complex is a single defect having a capture cross-section of 2.48x10{sup -16} cm{sup 2} for electrons which is independent of temperature.

SELECTION OF BURST-LIKE TRANSIENTS AND STOCHASTIC VARIABLES USING MULTI-BAND IMAGE DIFFERENCING IN THE PAN-STARRS1 MEDIUM-DEEP SURVEY

International Nuclear Information System (INIS)

Kumar, S.; Gezari, S.; Heinis, S.; Chornock, R.; Berger, E.; Soderberg, A.; Stubbs, C. W.; Kirshner, R. P.; Rest, A.; Huber, M. E.; Narayan, G.; Marion, G. H.; Burgett, W. S.; Foley, R. J.; Scolnic, D.; Riess, A. G.; Lawrence, A.; Smartt, S. J.; Smith, K.; Wood-Vasey, W. M.

2015-01-01

We present a novel method for the light-curve characterization of Pan-STARRS1 Medium Deep Survey (PS1 MDS) extragalactic sources into stochastic variables (SVs) and burst-like (BL) transients, using multi-band image-differencing time-series data. We select detections in difference images associated with galaxy hosts using a star/galaxy catalog extracted from the deep PS1 MDS stacked images, and adopt a maximum a posteriori formulation to model their difference-flux time-series in four Pan-STARRS1 photometric bands g P1 , r P1 , i P1 , and z P1 . We use three deterministic light-curve models to fit BL transients; a Gaussian, a Gamma distribution, and an analytic supernova (SN) model, and one stochastic light-curve model, the Ornstein-Uhlenbeck process, in order to fit variability that is characteristic of active galactic nuclei (AGNs). We assess the quality of fit of the models band-wise and source-wise, using their estimated leave-out-one cross-validation likelihoods and corrected Akaike information criteria. We then apply a K-means clustering algorithm on these statistics, to determine the source classification in each band. The final source classification is derived as a combination of the individual filter classifications, resulting in two measures of classification quality, from the averages across the photometric filters of (1) the classifications determined from the closest K-means cluster centers, and (2) the square distances from the clustering centers in the K-means clustering spaces. For a verification set of AGNs and SNe, we show that SV and BL occupy distinct regions in the plane constituted by these measures. We use our clustering method to characterize 4361 extragalactic image difference detected sources, in the first 2.5 yr of the PS1 MDS, into 1529 BL, and 2262 SV, with a purity of 95.00% for AGNs, and 90.97% for SN based on our verification sets. We combine our light-curve classifications with their nuclear or off-nuclear host galaxy offsets, to

Annealing study of the electron-irradiation-induced defects H4 and E11 in InP: Defect transformation (H4-E11)→H4'

International Nuclear Information System (INIS)

Bretagnon, T.; Bastide, G.; Rouzeyre, M.

1990-01-01

Capacitance spectroscopy has been used to study the two dominant deep levels, H 4 and E 11 , produced in InP by low-energy electron irradiation. The annealing rates of H 4 and E 11 in the p-type material are found to be identical, as is also the dependence on free-carrier recombination and on the chemical nature of the acceptor (Cd or Zn). Recombination-enhanced annealing converts these traps to a hole trap H 4 ' , which is not detectable by conventional deep-level transient spectroscopy. Its emission and capture properties are measured and analyzed. The similarity of the creation and annealing behavior of H 4 and E 11 shows that they share a common point defect. Our results lead to the tentative identification of the defect as a phosphorous vacancy-acceptor complex and we show how this may anneal to the H 4 ' center

EL2-related defects in neutron irradiated GaAs1/sub -x/P/sub x/ alloys

International Nuclear Information System (INIS)

Munoz, E.; Garcia, F.; Jimenez, B.; Calleja, E.; Gomez, A.; Alcober, V.

1985-01-01

The generation of EL2-related defects in GaAsP alloys by fast neutron irradiation has been studied through deep level transient spectroscopy and photocapacitance techniques. After irradiation p-n junctions were not annealed at high temperatures. In the composition range x>0.4, fast neutrons generate a broad center at E/sub c/-0.7 eV that it is suggested to belong to the EL2 family. The presence of photocapacitance quenching effects has been taken as a preliminary fingerprint to make the above assignment. From computer analysis of the nonexponential transient capacitance waveforms, evidence that neutron irradiation creates a family of midgap levels, EL2-related, is found

Electrical and optical properties of Cr and Fe implanted n-GaN

International Nuclear Information System (INIS)

Polyakov, A.Y.; Smirnov, N.B.; Govorkov, A.V.; Pashkova, N.V.; Shlensky, A.A.; Pearton, S.J.; Overberg, M.E.; Abernathy, C.R.; Zavada, J.M.; Wilson, R.G.

2003-01-01

Deep levels introduced into n-GaN films by Fe and Cr implantation have been studied by means of optical absorption and microcathodoluminescence spectroscopy measurements and by deep level transient spectroscopy, admittance spectroscopy, and capacitance-voltage profiling. The results are compared with previous measurements on Mn and Co implanted GaN. It is shown that the acceptor levels of substitutional Mn, Co, Fe, and Cr in n-GaN are located, respectively, near E v +1.6 eV, E v +1.7 eV, E v +1.8 eV, and E v +2 eV, the trend being similar to that observed in GaAs, GaP, and InP. The Fermi level in the implanted region is pinned near deep electron traps at E c -0.5 eV that are tentatively attributed to complexes between substitutional transition metal ions and native defects such as nitrogen vacancies. It is shown that for all implanted species after 700 deg. C annealing a damaged region with relatively high resistivity is formed down to the depth of about 1 μm much, exceeding the projected range of implanted ions. This region is enriched with radiation-damage-related defects and is most likely formed by outdiffusion of these defects from the implanted region during annealing. The thickness of this damaged region is shown to be the lowest for Cr implantation

Transient Antiphospholipid Syndrome Associated with Primary Cytomegalovirus Infection: A Case Report and Literature Review

Directory of Open Access Journals (Sweden)

Tsuyoshi Nakayama

2014-01-01

Full Text Available Viral infection is known to induce transient autoimmunity in humans. Acute cytomegalovirus (CMV infection is implicated in occasional thrombosis formation. We here, for the first time, report a 19-year-old female who had an acute CMV infection, leading to a deep venous thrombosis and a pulmonary embolism along with transient appearance of lupus anticoagulant. The pathological role of antiphospholipid antibodies in CMV-mediated thrombosis is discussed.

ELM-induced transient tungsten melting in the JET divertor

International Nuclear Information System (INIS)

Coenen, J.W.; Clever, M.; Knaup, M.; Arnoux, G.; Matthews, G.F.; Balboa, I.; Meigs, A.; Bazylev, B.; Autricque, A.; Dejarnac, R.; Horacek, J.; Komm, M.; Coffey, I.; Corre, Y.; Gauthier, E.; Devaux, S.; Krieger, K.; Frassinetti, L.; Jachmich, S.; Marsen, S.

2015-01-01

The original goals of the JET ITER-like wall included the study of the impact of an all W divertor on plasma operation (Coenen et al 2013 Nucl. Fusion 53 073043) and fuel retention (Brezinsek et al 2013 Nucl. Fusion 53 083023). ITER has recently decided to install a full-tungsten (W) divertor from the start of operations. One of the key inputs required in support of this decision was the study of the possibility of W melting and melt splashing during transients. Damage of this type can lead to modifications of surface topology which could lead to higher disruption frequency or compromise subsequent plasma operation. Although every effort will be made to avoid leading edges, ITER plasma stored energies are sufficient that transients can drive shallow melting on the top surfaces of components. JET is able to produce ELMs large enough to allow access to transient melting in a regime of relevance to ITER. Transient W melt experiments were performed in JET using a dedicated divertor module and a sequence of I P  = 3.0 MA/B T  = 2.9 T H-mode pulses with an input power of P IN  = 23 MW, a stored energy of ∼6 MJ and regular type I ELMs at ΔW ELM  = 0.3 MJ and f ELM  ∼ 30 Hz. By moving the outer strike point onto a dedicated leading edge in the W divertor the base temperature was raised within ∼1 s to a level allowing transient, ELM-driven melting during the subsequent 0.5 s. Such ELMs (δW ∼ 300 kJ per ELM) are comparable to mitigated ELMs expected in ITER (Pitts et al 2011 J. Nucl. Mater. 415 (Suppl.) S957–64). Although significant material losses in terms of ejections into the plasma were not observed, there is indirect evidence that some small droplets (∼80 µm) were released. Almost 1 mm (∼6 mm 3 ) of W was moved by ∼150 ELMs within 7 subsequent discharges. The impact on the main plasma parameters was minor and no disruptions occurred. The W-melt gradually moved along the leading edge towards the high-field side, driven by j

Electronic structure of deep levels in silicon. A study of gold, magnesium, and iron centers in silicon

International Nuclear Information System (INIS)

Thilderkvist, A. L.

1994-02-01

The electronic structure of gold, magnesium and iron related deep centers in silicon is investigated. Their deep and shallow levels are studied by means of fourier transform spectroscopy, combined with uniaxial stress and Zeeman spectroscopy. The neutral substitutional gold center in silicon is investigated and the center is paramagnetic, S=1/2, with g||≅2.8 and g≅0, and has a static distortion. Reorientation between different equivalent distortions is observed even at 1.9 K. A gold pair center in silicon is studied and several line series, with a zero-phonon line followed by several phonon replicas, are observed. Uniaxial stress and Zeeman results reveal a trigonal symmetry of the center, which together with the high dissociation energy of 1.7 eV suggests that the center consists of two nearest-neighbor substitutional gold atoms. A divacancy model is employed to explain the electronic properties of the center. The interstitial magnesium double donor in silicon in its two charge states Mg o and Mg + is investigated. Deviations in the binding energies of the excited states from those calculated within the effective-mass theory (EMT) are found and explained by a perturbation in the central-cell region. The quadratic Zeeman effect of shallow donors in silicon is analyzed within the framework of the EMT using a numerical approach. The wave functions are calculated in a discrete radial mesh and the Zeeman Hamiltonian has be evaluated for the lowest excited states for fields up to 6 T. The neutral interstitial iron defect in silicon gives rise to two sets of line spectra. The first set arises when an electron is excited to a shallow donor like state where the electron is decoupled from the Fe + core which has a 4 T 1 ground state term. The second set arises when an excited electron of a 1 symmetry is coupled by exchange interaction to the core, yielding at 5 T 1 final state. Experiments determine the multiplet splitting of the 4 T 1 and 5 T 1 states due to spring

Excited-state dynamics of a ruthenium(II) catalyst studied by transient photofragmentation in gas phase and transient absorption in solution

Energy Technology Data Exchange (ETDEWEB)

Imanbaew, D.; Nosenko, Y. [Fachbereich Chemie, Technische Universität Kaiserslautern, Erwin-Schrödinger-Str. 52–54, 67663 Kaiserslautern (Germany); Forschungszentrum OPTIMAS, Erwin-Schrödinger-Str. 46, 67663 Kaiserslautern (Germany); Kerner, C. [Fachbereich Chemie, Technische Universität Kaiserslautern, Erwin-Schrödinger-Str. 52–54, 67663 Kaiserslautern (Germany); Chevalier, K.; Rupp, F. [Fachbereich Physik, Technische Universität Kaiserslautern, Erwin-Schrödinger-Str. 46, 67663 Kaiserslautern (Germany); Riehn, C., E-mail: riehn@chemie.uni-kl.de [Fachbereich Chemie, Technische Universität Kaiserslautern, Erwin-Schrödinger-Str. 52–54, 67663 Kaiserslautern (Germany); Forschungszentrum OPTIMAS, Erwin-Schrödinger-Str. 46, 67663 Kaiserslautern (Germany); Thiel, W.R. [Fachbereich Chemie, Technische Universität Kaiserslautern, Erwin-Schrödinger-Str. 52–54, 67663 Kaiserslautern (Germany); Diller, R. [Fachbereich Physik, Technische Universität Kaiserslautern, Erwin-Schrödinger-Str. 46, 67663 Kaiserslautern (Germany)

2014-10-17

Graphical abstract: - Highlights: • Ultrafast dynamics of new Ru(II) catalysts investigated in gas phase and solution. • Catalyst activation (HCl loss) achieved in ion trap by UV photoexcitation. • Electronic relaxation proceeds by IVR and IC followed by ground state dissociation. • No triplet formation in contrast to other Ru-polypyridine complexes. • Solvent prohibits catalyst activation in solution by fast vibrational cooling. - Abstract: We report studies on the excited state dynamics of new ruthenium(II) complexes [(η{sup 6}-cymene)RuCl(apypm)]PF{sub 6} (apypm=2-NR{sub 2}-4-(pyridine-2-yl)-pyrimidine, R=CH{sub 3} (1)/H (2)) which, in their active form [1{sup +}-HCl] and [2{sup +}-HCl], catalyze the transfer hydrogenation of arylalkyl ketones in the absence of a base. The investigations encompass femtosecond pump–probe transient mass spectrometry under isolated conditions and transient absorption spectroscopy in acetonitrile solution, both on the cations [(η{sup 6}-cymene)RuCl(apypm)]{sup +} (1{sup +}, 2{sup +}). Gas phase studies on mass selected ions were performed in an ESI ion trap mass spectrometer by transient photofragmentation, unambiguously proving the formation of the activated catalyst species [1{sup +}-HCl] or [2{sup +}-HCl] after photoexcitation being the only fragmentation channel. The primary excited state dynamics in the gas phase could be fitted to a biexponential decay, yielding time constants of <100 fs and 1–3 ps. Transient absorption spectroscopy performed in acetonitrile solution using femtosecond UV/Vis and IR probe laser pulses revealed additional deactivation processes on longer time scales (∼7–12 ps). However, the formation of the active catalyst species after photoexcitation could not be observed in solution. The results from both studies are compared to former CID investigations and DFT calculations concerning the activation mechanism.

Study of early laser-induced plasma dynamics: Transient electron density gradients via Thomson scattering and Stark Broadening, and the implications on laser-induced breakdown spectroscopy measurements

International Nuclear Information System (INIS)

Diwakar, P.K.; Hahn, D.W.

2008-01-01

To further develop laser-induced breakdown spectroscopy (LIBS) as an analytical technique, it is necessary to better understand the fundamental processes and mechanisms taking place during the plasma evolution. This paper addresses the very early plasma dynamics (first 100 ns) using direct plasma imaging, light scattering, and transmission measurements from a synchronized 532-nm probe laser pulse. During the first 50 ns following breakdown, significant Thomson scattering was observed while the probe laser interacted with the laser-induced plasma. The Thomson scattering was observed to peak 15-25 ns following plasma initiation and then decay rapidly, thereby revealing the highly transient nature of the free electron density and plasma equilibrium immediately following breakdown. Such an intense free electron density gradient is suggestive of a non-equilibrium, free electron wave generated by the initial breakdown and growth processes. Additional probe beam transmission measurements and electron density measurements via Stark broadening of the 500.1-nm nitrogen ion line corroborate the Thomson scattering observations. In concert, the data support the finding of a highly transient plasma that deviates from local thermodynamic equilibrium (LTE) conditions during the first tens of nanoseconds of plasma lifetime. The implications of this early plasma transient behavior are discussed in the context of plasma-analyte interactions and the role on LIBS measurements

Analyses of the deep borehole drilling status for a deep borehole disposal system

Energy Technology Data Exchange (ETDEWEB)

Lee, Jong Youl; Choi, Heui Joo; Lee, Min Soo; Kim, Geon Young; Kim, Kyung Su [KAERI, Daejeon (Korea, Republic of)

2016-05-15

The purpose of disposal for radioactive wastes is not only to isolate them from humans, but also to inhibit leakage of any radioactive materials into the accessible environment. Because of the extremely high level and long-time scale radioactivity of HLW(High-level radioactive waste), a mined deep geological disposal concept, the disposal depth is about 500 m below ground, is considered as the safest method to isolate the spent fuels or high-level radioactive waste from the human environment with the best available technology at present time. Therefore, as an alternative disposal concept, i.e., deep borehole disposal technology is under consideration in number of countries in terms of its outstanding safety and cost effectiveness. In this paper, the general status of deep drilling technologies was reviewed for deep borehole disposal of high level radioactive wastes. Based on the results of these review, very preliminary applicability of deep drilling technology for deep borehole disposal analyzed. In this paper, as one of key technologies of deep borehole disposal system, the general status of deep drilling technologies in oil industry, geothermal industry and geo scientific field was reviewed for deep borehole disposal of high level radioactive wastes. Based on the results of these review, the very preliminary applicability of deep drilling technology for deep borehole disposal such as relation between depth and diameter, drilling time and feasibility classification was analyzed.

Amorphous surface layer versus transient amorphous precursor phase in bone - A case study investigated by solid-state NMR spectroscopy.

Science.gov (United States)

Von Euw, Stanislas; Ajili, Widad; Chan-Chang, Tsou-Hsi-Camille; Delices, Annette; Laurent, Guillaume; Babonneau, Florence; Nassif, Nadine; Azaïs, Thierry

2017-09-01

phosphate (ACP) environments could also arise from a transient amorphous precursor phase of apatite. Here, we provide an NMR spectroscopy methodology to reveal the origin of these ACP environments in bone mineral or in biomimetic apatite. The 1 H magnetization exchange between protons arising from amorphous and crystalline domains shows unambiguously that an ACP layer coats the apatitic crystalline core of bone et biomimetic apatite platelets. Copyright © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

A transient, flat spectrum radio pulsar near the Galactic Centre

Science.gov (United States)

Dexter, J.; Degenaar, N.; Kerr, M.; Deller, A.; Deneva, J.; Lazarus, P.; Kramer, M.; Champion, D.; Karuppusamy, R.

2017-06-01

Recent studies have shown possible connections between highly magnetized neutron stars ('magnetars'), whose X-ray emission is too bright to be powered by rotational energy, and ordinary radio pulsars. In addition to the magnetar SGR J1745-2900, one of the radio pulsars in the Galactic Centre (GC) region, PSR J1746-2850, had timing properties implying a large magnetic field strength and young age, as well as a flat spectrum. All characteristics are similar to those of rare, transient, radio-loud magnetars. Using several deep non-detections from the literature and two new detections, we show that this pulsar is also transient in the radio. Both the flat spectrum and large amplitude variability are inconsistent with the light curves and spectral indices of three radio pulsars with high magnetic field strengths. We further use frequent, deep archival imaging observations of the GC in the past 15 yr to rule out a possible X-ray outburst with a luminosity exceeding the rotational spin-down rate. This source, either a transient magnetar without any detected X-ray counterpart or a young, strongly magnetized radio pulsar producing magnetar-like radio emission, further blurs the line between the two categories. We discuss the implications of this object for the radio emission mechanism in magnetars and for star and compact object formation in the GC.

Final LDRD report : science-based solutions to achieve high-performance deep-UV laser diodes.

Energy Technology Data Exchange (ETDEWEB)

Armstrong, Andrew M.; Miller, Mary A.; Crawford, Mary Hagerott; Alessi, Leonard J.; Smith, Michael L.; Henry, Tanya A.; Westlake, Karl R.; Cross, Karen Charlene; Allerman, Andrew Alan; Lee, Stephen Roger

2011-12-01

We present the results of a three year LDRD project that has focused on overcoming major materials roadblocks to achieving AlGaN-based deep-UV laser diodes. We describe our growth approach to achieving AlGaN templates with greater than ten times reduction of threading dislocations which resulted in greater than seven times enhancement of AlGaN quantum well photoluminescence and 15 times increase in electroluminescence from LED test structures. We describe the application of deep-level optical spectroscopy to AlGaN epilayers to quantify deep level energies and densities and further correlate defect properties with AlGaN luminescence efficiency. We further review our development of p-type short period superlattice structures as an approach to mitigate the high acceptor activation energies in AlGaN alloys. Finally, we describe our laser diode fabrication process, highlighting the development of highly vertical and smooth etched laser facets, as well as characterization of resulting laser heterostructures.

The role of surface and deep-level defects on the emission of tin oxide quantum dots

International Nuclear Information System (INIS)

Kumar, Vinod; Kumar, Vijay; Som, S; Ntwaeaborwa, O M; Swart, H C; Neethling, J H; Lee, Mike

2014-01-01

This paper reports on the role of surface and deep-level defects on the blue emission of tin oxide quantum dots (SnO 2 QDs) synthesized by the solution-combustion method at different combustion temperatures. X-ray diffraction studies showed the formation of a single rutile SnO 2 phase with a tetragonal lattice structure. High resolution transmission electron microscopy studies revealed an increase in the average dot size from 2.2 to 3.6 nm with an increase of the combustion temperature from 350 to 550 °C. A decrease in the band gap value from 3.37 to 2.76 eV was observed with the increase in dot size due to the quantum confinement effect. The photoluminescence emission was measured for excitation at 325 nm and it showed a broad blue emission band for all the combustion temperatures studied. This was due to the creation of various oxygen and tin vacancies/defects as confirmed by x-ray photoelectron spectroscopy data. The origin of the blue emission in the SnO 2 QDs is discussed with the help of an energy band diagram. (paper)

Characterization of defects in hydrogenated amorphous silicon deposited on different substrates by capacitance techniques

International Nuclear Information System (INIS)

Darwich, R.; Roca i Cabarrocas, P.

2011-01-01

Hydrogenated amorphous silicon (a-Si:H) thin films deposited on crystalline silicon and Corning glass substrate were analyzed using different capacitance techniques. The distribution of localized states and some electronic properties were studied using the temperature, frequency and bias dependence of the Schottky barrier capacitance and deep level transient spectroscopy. Our results show that the distribution of the gap states depends on the type of substrate. We have found that the films deposited on c-Si substrate represent only one positively charged or prerelaxed neutral deep state and one interface state, while the films deposited on glass substrate have one interface state and three types of deep defect states, positively or prerelaxed neutral, neutral and negatively charged.

Deep Super Learner: A Deep Ensemble for Classification Problems

OpenAIRE

Young, Steven; Abdou, Tamer; Bener, Ayse

2018-01-01

Deep learning has become very popular for tasks such as predictive modeling and pattern recognition in handling big data. Deep learning is a powerful machine learning method that extracts lower level features and feeds them forward for the next layer to identify higher level features that improve performance. However, deep neural networks have drawbacks, which include many hyper-parameters and infinite architectures, opaqueness into results, and relatively slower convergence on smaller datase...

Defect engineering for 650 nm high-power AlGaInP laser diodes

International Nuclear Information System (INIS)

Kim, D.S.; Kim, K.C.; Shin, Y.C.; Kang, D.H.; Kim, B.J.; Kim, Y.M.; Park, Y.; Kim, T.G.

2006-01-01

To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 deg. C. The characteristic temperatures (T ) were 212 K for 25-60 deg. C and 106 K over 60 deg. C

Supergiant Fast X-ray Transients with Swift: spectroscopic and temporal properties

OpenAIRE

Romano, P.; Mangano, V.; Ducci, L.; Esposito, P.; Farinelli, R.; Ceccobello, C.; Vercellone, S.; Burrows, D. N.; Kennea, J. A.; Krimm, H. A.; Gehrels, N.

2012-01-01

Supergiant fast X-ray transients (SFXTs) are a class of high-mass X-ray binaries with possible counterparts in the high energy gamma rays. The Swift SFXT Project has conducted a systematic investigation of the properties of SFTXs on timescales ranging from minutes to years and in several intensity states (from bright flares, to intermediate intensity states, and down to almost quiescence). We also performed broad-band spectroscopy of outbursts, and intensity-selected spectroscopy outside of o...

The Effects of Test Anxiety on Learning at Superficial and Deep Levels of Processing.

Science.gov (United States)

Weinstein, Claire E.; And Others

1982-01-01

Using a deep-level processing strategy, low test-anxious college students performed significantly better than high test-anxious students in learning a paired-associate word list. Using a superficial-level processing strategy resulted in no significant difference in performance. A cognitive-attentional theory and test anxiety mechanisms are…

Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD (+IBAD) methods. Part 1: Effective relative permittivity

Science.gov (United States)

Hartmanová, Mária; Nádaždy, Vojtech; Kundracik, František; Mansilla, Catina

2013-03-01

Study is devoted to the effective relative permittivity ɛr of CeO2 + x. Sm2O3 thin films prepared by electron-beam physical vapour deposition and ionic beam-assisted deposition methods; ɛr was investigated by three independent ways from the bulk parallel capacitance Cp, impedance capacitance Cimp, and accumulation capacitance Cacc in dependence on the deposition conditions (deposition temperature, dopant amount x and Ar+ ion bombardment during the film deposition) used. Investigations were performed using impedance spectroscopy, capacitance-voltage and current-voltage characteristics as well as deep level transient spectroscopy. Results obtained are described and discussed.

SeaWiFS Deep Blue Aerosol Optical Thickness Monthly Level 3 Climatology Data Gridded at 0.5 Degrees V004

Data.gov (United States)

National Aeronautics and Space Administration — The SeaWiFS Deep Blue Level 3 Monthly Climatology Product contains monthly global climatology gridded (0.5 x 0.5 deg) data derived from SeaWiFS Deep Blue Level 3...

Assessment of Groundwater Susceptibility to Non-Point Source Contaminants Using Three-Dimensional Transient Indexes.

Science.gov (United States)

Zhang, Yong; Weissmann, Gary S; Fogg, Graham E; Lu, Bingqing; Sun, HongGuang; Zheng, Chunmiao

2018-06-05

Groundwater susceptibility to non-point source contamination is typically quantified by stable indexes, while groundwater quality evolution (or deterioration globally) can be a long-term process that may last for decades and exhibit strong temporal variations. This study proposes a three-dimensional (3- d ), transient index map built upon physical models to characterize the complete temporal evolution of deep aquifer susceptibility. For illustration purposes, the previous travel time probability density (BTTPD) approach is extended to assess the 3- d deep groundwater susceptibility to non-point source contamination within a sequence stratigraphic framework observed in the Kings River fluvial fan (KRFF) aquifer. The BTTPD, which represents complete age distributions underlying a single groundwater sample in a regional-scale aquifer, is used as a quantitative, transient measure of aquifer susceptibility. The resultant 3- d imaging of susceptibility using the simulated BTTPDs in KRFF reveals the strong influence of regional-scale heterogeneity on susceptibility. The regional-scale incised-valley fill deposits increase the susceptibility of aquifers by enhancing rapid downward solute movement and displaying relatively narrow and young age distributions. In contrast, the regional-scale sequence-boundary paleosols within the open-fan deposits "protect" deep aquifers by slowing downward solute movement and displaying a relatively broad and old age distribution. Further comparison of the simulated susceptibility index maps to known contaminant distributions shows that these maps are generally consistent with the high concentration and quick evolution of 1,2-dibromo-3-chloropropane (DBCP) in groundwater around the incised-valley fill since the 1970s'. This application demonstrates that the BTTPDs can be used as quantitative and transient measures of deep aquifer susceptibility to non-point source contamination.

The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

Energy Technology Data Exchange (ETDEWEB)

Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China)

2014-01-28

Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

Characterizing the Solvated Structure of Photoexcited [Os(terpy2]2+ with X-ray Transient Absorption Spectroscopy and DFT Calculations

Directory of Open Access Journals (Sweden)

Xiaoyi Zhang

2016-02-01

Full Text Available Characterizing the geometric and electronic structures of individual photoexcited dye molecules in solution is an important step towards understanding the interfacial properties of photo-active electrodes. The broad family of “red sensitizers” based on osmium(II polypyridyl compounds often undergoes small photo-induced structural changes which are challenging to characterize. In this work, X-ray transient absorption spectroscopy with picosecond temporal resolution is employed to determine the geometric and electronic structures of the photoexcited triplet state of [Os(terpy2]2+ (terpy: 2,2′:6′,2″-terpyridine solvated in methanol. From the EXAFS analysis, the structural changes can be characterized by a slight overall expansion of the first coordination shell [OsN6]. DFT calculations supports the XTA results. They also provide additional information about the nature of the molecular orbitals that contribute to the optical spectrum (with TD-DFT and the near-edge region of the X-ray spectra.

Numerical investigation of high level nuclear waste disposal in deep anisotropic geologic repositories

KAUST Repository

Salama, Amgad; El Amin, Mohamed F.; Sun, Shuyu

2015-01-01

One of the techniques that have been proposed to dispose high level nuclear waste (HLW) has been to bury them in deep geologic formations, which offer relatively enough space to accommodate the large volume of HLW accumulated over the years since

Electric Propulsion Induced Secondary Mass Spectroscopy

Science.gov (United States)

Amini, Rashied; Landis, Geoffrey

2012-01-01

A document highlights a means to complement remote spectroscopy while also providing in situ surface samples without a landed system. Historically, most compositional analysis of small body surfaces has been done remotely by analyzing reflection or nuclear spectra. However, neither provides direct measurement that can unambiguously constrain the global surface composition and most importantly, the nature of trace composition and second-phase impurities. Recently, missions such as Deep Space 1 and Dawn have utilized electric propulsion (EP) accelerated, high-energy collimated beam of Xe+ ions to propel deep space missions to their target bodies. The energies of the Xe+ are sufficient to cause sputtering interactions, which eject material from the top microns of a targeted surface. Using a mass spectrometer, the sputtered material can be determined. The sputtering properties of EP exhaust can be used to determine detailed surface composition of atmosphereless bodies by electric propulsion induced secondary mass spectroscopy (EPI-SMS). EPI-SMS operation has three high-level requirements: EP system, mass spectrometer, and altitude of about 10 km. Approximately 1 keV Xe+ has been studied and proven to generate high sputtering yields in metallic substrates. Using these yields, first-order calculations predict that EPI-SMS will yield high signal-to-noise at altitudes greater than 10 km with both electrostatic and Hall thrusters.

The influence of Na on metastable defect kinetics in CIGS materials

International Nuclear Information System (INIS)

Erslev, Peter T.; Lee, Jin Woo; Shafarman, William N.; Cohen, J. David

2009-01-01

The electronic properties of matched pairs of Cu(In x Ga 1-x )Se 2 (CIGS) solar cells, with and without normal sodium levels, were studied by junction capacitance methods including admittance spectroscopy, drive level capacitance profiling (DLCP) and transient photocapacitance spectroscopy (TPC). The capacitance profiling measurements revealed a large deep defect density in the vicinity of the barrier interface that was likely responsible for the lower performance of the reduced Na samples. The metastable properties of CIGS solar cells were also examined, and these revealed marked differences between the two types of samples. These results directly address the predictions of theoretical microscopic models that have been proposed to account for metastable effects in CIGS

Radiation damage annealing mechanisms and possible low temperature annealing in silicon solar cells

Science.gov (United States)

Weinberg, I.; Swartz, C. K.

1980-01-01

Deep level transient spectroscopy and the Shockley-Read-Hall recombination theory are used to identify the defect responsible for reverse annealing in 2 ohm-cm n+/p silicon solar cells. This defect, with energy level at Ev + 0.30 eV, has been tentatively identified as a boron-oxygen-vacancy complex. It has been also determined by calculation that the removal of this defect could result in significant annealing at temperatures as low as 200 C for 2 ohm-cm and lower resistivity cells.

High-level transient expression of recombinant protein in lettuce.

Science.gov (United States)

Joh, Lawrence D; Wroblewski, Tadeusz; Ewing, Nicholas N; VanderGheynst, Jean S

2005-09-30

Transient expression following agroinfiltration of plant tissue was investigated as a system for producing recombinant protein. As a model system, Agrobacterium tumefaciens containing the beta-glucuronidase (GUS) gene was vacuum infiltrated into lettuce leaf disks. Infiltration with a suspension of 10(9) colony forming units/mL followed by incubation for 72 h at 22 degrees C in continuous darkness produced a maximum of 0.16% GUS protein based on dry tissue or 1.1% GUS protein based on total soluble protein. This compares favorably to expression levels for commercially manufactured GUS protein from transgenic corn seeds. A. tumefaciens culture medium pH between 5.6 and 7.0 and surfactant concentrations lettuce to produce GUS protein more rapidly, but final levels did not exceed the GUS production in leaves incubated in continuous darkness after 72 h at 22 degrees C. The kinetics of GUS expression during incubation in continuous light and dark were represented well using a logistic model, with rate constants of 0.30 and 0.29/h, respectively. To semi-quantitatively measure the GUS expression in large numbers of leaf disks, a photometric enhancement of the standard histochemical staining method was developed. A linear relationship with an R2 value of 0.90 was determined between log10 (% leaf darkness) versus log10 (GUS activity). Although variability in expression level was observed, agroinfiltration appears to be a promising technology that could potentially be scaled up to produce high-value recombinant proteins in planta. Copyright 2005 Wiley Periodicals, Inc

Constraints on sea level during the Pliocene: Records from the deep Pacific Ocean

Science.gov (United States)

Woodard, S. C.; Rosenthal, Y.; Miller, K. G.; Wright, J. D.; Chiu, B. K.

2013-12-01

To reconstruct sea level during the transition from peak late Pliocene warmth (~3.15 Ma) to the onset of N. Hemisphere glaciation (~2.75 Ma), we generated high resolution stable isotope (δ18O, δ13C) and trace metal (Mg/Ca) records using benthic foraminifera, Uvigerina sp., from northwest Pacific ODP Site 1208 (3350 m water depth). During the peak late Pliocene warmth Mg/Ca-derived temperature records indicate deep Pacific interglacial temperatures were not significantly warmer (+0.6 ×0.8°C) than modern and glacial temperatures were near freezing similar to the LGM. In contrast, the deep N. Atlantic (Site 607) was apparently ~3°C warmer than the modern during both Pliocene glacial and interglacial periods (Sosdian and Rosenthal, 2009), based on the Mg/Ca of P. wuellerstorfi, which may be influenced by carbonate ion effect (Elderfield et al., 2009 and refs therein). δ18O records indicate a significant long-term increase in benthic δ18O in both the N. Atlantic and N. Pacific, although the rate of increase (Δδ18O) in the N. Atlantic is approximately 3x that of the N. Pacific (Site 1208), based on least squares regressions of all glacial-interglacial data. The discrepancy in the Δδ18O between the two basins is explained by Mg/Ca-derived temperature records. Results from Site 1208 show that the deep Pacific experienced no long-term cooling over the period 3.15-2.7 Ma when the deep N. Atlantic cooled by ~2.5°C on average. The relatively stable Pacific deep-water record provides the more reliable reconstructions of sea-level changes. From 3.15-2.7 Ma, Pacific δ18O data records an average increase of ~0.19× 0.08 per mil implying a sea level drop of 19 m × 8 m. After correcting the N. Atlantic record for temperature, we find the long term δ18O change from 3.15-2.7 Ma is ~0.23×0.1 per mil which equates to a peak of 23 m × 10 m. Our estimates are further corroborated by foraminiferal calcite δ18O recorded during Pliocene peak interglacials KM3 and G17. The �

Ultrafast Transient Absorption Spectroscopy Investigation of Photoinduced Dynamics in POLY(3-HEXYLTHIOPHENE)-BLOCK-OLIGO(ANTHRACENE-9,10-DIYL)

Science.gov (United States)

Strain, Jacob; Rathnayake, Hemali; Liu, Jinjun

2017-06-01

Semiconducting polymer nanostructures featuring bulk heterojunction (BHJ) architecture are promising light harvesters in photovoltaic (PV) devices because they allow control of individual domain sizes, internal structure and ordering, as well as well-defined contact between the electron donor and acceptor. Power conversion efficiency (PCE) of PV devices strongly depends on photoinduced dynamics. Understanding and optimizing photoinduced charge transfer processes in BHJ's hence help improve the performance of PV devices and increase their PCE in particular. We have investigated the photoinduced dynamics of a block polymer containing moieties of poly-3-hexylthiophene (P3HT) and polyanthracene (PANT) in solution and in solid state with femtosecond transient absorption (TA) spectroscopy. The dynamics of the polymer PANT alone are also studied as a control. The TA spectra of PANT includes a strong excited state absorption centered at 610 (nm) along with a stimulated emission signal stretching past the detection limit into the UV region which is absent in the monomer's spectra in the detection window. The block polymer's TA spectra strongly resembles that of P3HT but a noticeable positive pull on P3HT's stimulated emission signal residing at 575-620 (nm) is indicative of the excited state absorption of PANT in the adjacent spectral region. The doubling of the lifetime exciton delocalization on the block polymer versus P3HT alone have alluded that the lifetime of P3HT is extended by the covalent addition of PANT. The current spectroscopic investigation represents an interesting example of photoinduced processes in systems with complex energy level structure. Studies of dependence of change generation and separation on composition, dimension, and morphology of the heterojunctions are in process.

Fundamental Materials Research and Advanced Process Development for Thin-Film CIS-Based Photovoltaics: Final Technical Report, 2 October 2001 - 30 September 2005

Energy Technology Data Exchange (ETDEWEB)

Anderson, T. J.; Li, S. S.; Crisalle, O. D.; Craciun, V.

2006-09-01

The objectives for this thin-film copper-indium-diselenide (CIS) solar cell project cover the following areas: Develop and characterize buffer layers for CIS-based solar cell; grow and characterize chemical-bath deposition of Znx Cd1-xS buffer layers grown on CIGS absorbers; study effects of buffer-layer processing on CIGS thin films characterized by the dual-beam optical modulation technique; grow epitaxial CuInSe2 at high temperature; study the defect structure of CGS by photoluminescence spectroscopy; investigate deep-level defects in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy; conduct thermodynamic modeling of the isothermal 500 C section of the Cu-In-Se system using a defect model; form alpha-CuInSe2 by rapid thermal processing of a stacked binary compound bilayer; investigate pulsed non-melt laser annealing on the film properties and performance of Cu(In,Ga)Se2 solar cells; and conduct device modeling and simulation of CIGS solar cells.

RFSP simulations of Darlington FINCH refuelling transient

International Nuclear Information System (INIS)

Carruthers, E.V.; Chow, H.C.

1997-01-01

Immediately after refuelling of a channel, the fresh bundles are free of fission products. Xenon-135, the most notable of the saturating fission products, builds up to an equilibrium level in about 30 h. The channel power of the refuelled channel would therefore initially peak and then drop to a steady-state level. The RFSP code can track saturating-fission-product transients and power transients. The Fully INstrumented CHannels (FINCHs) in Darlington NGS provides channel power data on the refuelling power transients. In this paper, such data has been used to identify the physical evidence of the fission-product transient effect on channel power, and to validate RFSP fission-product-driver calculation results. (author)

AlxGa1--xN/GaN band offsets determined by deep-level emission

International Nuclear Information System (INIS)

Hang, D. R.; Chen, C. H.; Chen, Y. F.; Jiang, H. X.; Lin, J. Y.

2001-01-01

We present studies of the compositional dependence of the optical properties of Al x Ga 1-x N(0 x Ga 1-x N. As aluminum concentration increases, the color of the band changes from yellow (2.2 eV) to blue (2.6 eV). The shift was less than that of the band gap. Together with previously published studies, it implies that the deep acceptor level is pinned to a common reference level to both materials, thus the deep level responsible for the yellow emission is used as a common reference level to determine the band alignment in Al x Ga 1-x N/GaN heterojunctions. Combining with the near-band-edge modulation spectra, the estimated ratio of conduction-to-valence band discontinuity is 65:35. Our results are close to the values obtained from PL measurements on Al 0.14 Ga 0.86 N/GaN quantum wells and those calculated by linear muffin-tin orbital method and linearized augmented plane wave method. copyright 2001 American Institute of Physics

Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

International Nuclear Information System (INIS)

Duenas, S.; Castan, H.; Garcia, H.; Barbolla, J.; Kukli, K.; Ritala, M.; Leskelae, M.

2005-01-01

Deep level transient spectroscopy, capacitance-voltage and conductance transient measurement techniques have been applied in order to evaluate the electrical quality of thin high-permittivity oxide layers on silicon. The oxides studied included HfO 2 film grown from two different oxygen-free metal precursors and Ta 2 O 5 and Nb 2 O 5 nanolaminates. The interface trap densities correlated to the oxide growth chemistry and semiconductor substrate treatment. No gap state densities induced by structural disorder were measured in the films grown on chemical SiO 2 . Trap densities were also clearly lower in HfO 2 films compared to Ta 2 O 5 -Nb 2 O 5

The relationship between the deep-level structure in crust and brewing of strong earthquakes in Xingtai area

Science.gov (United States)

Xiao, Lan-Xi; Zhu, Yuan-Qing; Zhang, Shao-Quan; Liu, Xu; Guo, Yu

1999-11-01

In this paper, crust medium is treated as Maxwell medium, and crust model includes hard inclusion, soft inclusion, deep-level fault. The stress concentration and its evolution with time are obtained by using three-dimensional finite element method and differential method. The conclusions are draw as follows: (1) The average stress concentration and maximum shear stress concentration caused by non-heterogeneous of crust are very high in hard inclusion and around the deep fault. With the time passing by, the concentration of average stress in the model gradually trends to uniform. At the same time, the concentration of maximum shear stress in hard inclusion increases gradually. This character is favorable to transfer shear strain energy from soft inclusion to hard inclusion. (2) When the upper mantle beneath the inclusion upheave at a certain velocity of 1 cm/a, the changes of average stress concentration with time become complex, and the boundary of the hard and soft inclusion become unconspicuous, but the maximum shear stress concentration increases much more in the hard inclusion with time at a higher velocity. This feature make for transformation of energy from the soft inclusion to the hard inclusion. (3) The changes of average stress concentration and maximum shear stress concentration with time around the deep-level fault result in further accumulation of maximum shear stress concentration and finally cause the deep-level fault instable and accelerated creep along fault direction. (4) The changes of vertical displacement on the surface of the model, which is caused by the accelerated creep of the deep-level fault, is similar to that of the observation data before Xingtai strong earthquake.

Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3

Science.gov (United States)

Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Gogova, D.; Tarelkin, S. A.; Pearton, S. J.

2018-03-01

The electrical properties of epitaxial β-Ga2O3 doped with Sn (1016-9 × 1018 cm-3) and grown by metalorganic chemical vapor deposition on semi-insulating β-Ga2O3 substrates are reported. Shallow donors attributable to Sn were observed only in a narrow region near the film/substrate interface and with a much lower concentration than the total Sn density. For heavily Sn doped films (Sn concentration, 9 × 1018 cm-3), the electrical properties in the top portion of the layer were determined by deep centers with a level at Ec-0.21 eV not described previously. In more lightly doped layers, the Ec-0.21 eV centers and deeper traps at Ec-0.8 eV were present, with the latter pinning the Fermi level. Low temperature photocapacitance and capacitance voltage measurements of illuminated samples indicated the presence of high densities (1017-1018 cm-3) of deep acceptors with an optical ionization threshold of 2.3 eV. Optical deep level transient spectroscopy (ODLTS) and photoinduced current transient spectroscopy (PICTS) detected electron traps at Ec-0.8 eV and Ec-1.1 eV. For lightly doped layers, the compensation of film conductivity was mostly provided by the Ec-2.3 eV acceptors. For heavily Sn doped films, deep acceptor centers possibly related to Ga vacancies were significant. The photocapacitance and the photocurrent caused by illumination at low temperatures were persistent, with an optical threshold of 1.9 eV and vanished only at temperatures of ˜400 K. The capture barrier for electrons causing the persistent photocapacitance effect was estimated from ODLTS and PICTS to be 0.25-0.35 eV.

SELECTION OF BURST-LIKE TRANSIENTS AND STOCHASTIC VARIABLES USING MULTI-BAND IMAGE DIFFERENCING IN THE PAN-STARRS1 MEDIUM-DEEP SURVEY

Energy Technology Data Exchange (ETDEWEB)

Kumar, S.; Gezari, S.; Heinis, S. [Department of Astronomy, University of Maryland, Stadium Drive, College Park, MD 21224 (United States); Chornock, R.; Berger, E.; Soderberg, A.; Stubbs, C. W.; Kirshner, R. P. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Rest, A. [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Huber, M. E.; Narayan, G.; Marion, G. H.; Burgett, W. S. [Institute for Astronomy, University of Hawaii, 2680 Woodlawn Drive, Honolulu, HI 96822 (United States); Foley, R. J. [Astronomy Department, University of Illinois at Urbana-Champaign, 1002 West Green Street, Urbana, IL 61801 (United States); Scolnic, D.; Riess, A. G. [Department of Physics and Astronomy, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218 (United States); Lawrence, A. [Institute for Astronomy, University of Edinburgh Scottish Universities Physics Alliance, Royal Observatory, Blackford Hill, Edinburgh EH9 3HJ (United Kingdom); Smartt, S. J.; Smith, K. [Astrophysics Research Centre, School of Mathematics and Physics, Queen' s University Belfast, Belfast BT7 1NN (United Kingdom); Wood-Vasey, W. M. [Pittsburgh Particle Physics, Astrophysics, and Cosmology Center, Department of Physics and Astronomy, University of Pittsburgh, 3941 O' Hara Street, Pittsburgh, PA 15260 (United States); and others

2015-03-20

We present a novel method for the light-curve characterization of Pan-STARRS1 Medium Deep Survey (PS1 MDS) extragalactic sources into stochastic variables (SVs) and burst-like (BL) transients, using multi-band image-differencing time-series data. We select detections in difference images associated with galaxy hosts using a star/galaxy catalog extracted from the deep PS1 MDS stacked images, and adopt a maximum a posteriori formulation to model their difference-flux time-series in four Pan-STARRS1 photometric bands g {sub P1}, r {sub P1}, i {sub P1}, and z {sub P1}. We use three deterministic light-curve models to fit BL transients; a Gaussian, a Gamma distribution, and an analytic supernova (SN) model, and one stochastic light-curve model, the Ornstein-Uhlenbeck process, in order to fit variability that is characteristic of active galactic nuclei (AGNs). We assess the quality of fit of the models band-wise and source-wise, using their estimated leave-out-one cross-validation likelihoods and corrected Akaike information criteria. We then apply a K-means clustering algorithm on these statistics, to determine the source classification in each band. The final source classification is derived as a combination of the individual filter classifications, resulting in two measures of classification quality, from the averages across the photometric filters of (1) the classifications determined from the closest K-means cluster centers, and (2) the square distances from the clustering centers in the K-means clustering spaces. For a verification set of AGNs and SNe, we show that SV and BL occupy distinct regions in the plane constituted by these measures. We use our clustering method to characterize 4361 extragalactic image difference detected sources, in the first 2.5 yr of the PS1 MDS, into 1529 BL, and 2262 SV, with a purity of 95.00% for AGNs, and 90.97% for SN based on our verification sets. We combine our light-curve classifications with their nuclear or off-nuclear host

Novel concepts for terahertz waveguide spectroscopy

DEFF Research Database (Denmark)

Jepsen, Peter Uhd

2009-01-01

. With such waveguides we demonstrate that it is possible to perform quantitative spectroscopy on very small volumes of sample material inside the PPWG. Using continuous-wave as well as femtosecond excitation we inject carriers into semiconductor material in the transparent PPWG, and perform static as well as transient...

Sub-Picosecond Injection of Electrons from Excited {Ru (2,2'-bipy-4,4'-dicarboxy)2(SCN)2} into TiO2 Using Transient Mid-Infrared Spectroscopy

International Nuclear Information System (INIS)

Nozik, A.J.; Ghosh, H.N.; Asbury, J.B.; Sprague, J.R.; Ellingson, R.J.; Ferrere, S.; Lian, T.

1999-01-01

We have used femtosecond pump-probe spectroscopy to time resolve the injection of electrons into nanocrystalline TiO2 film electrodes under ambient conditions following photoexcitation of the adsorbed dye, [Ru(4,4'-dicarboxy-2,2'-bipyridine)2(NCS)2] (N3). Pumping at one of the metal-to-ligand charge transfer adsorption peaks and probing the absorption of electrons injected into the TiO2 conduction band at 1.52 m and in the range of 4.1 to 7.0 m, we have directly observed the arrival of the injected electrons. Our measurements indicate an instrument-limited 50-fs upper limit on the electron injection time under ambient conditions in air. We have compared the infrared transient absorption for non-injecting (blank) systems consisting of N3 in ethanol and N3 adsorbed to films of nanocrystalline Al2O3 and ZrO2, and found no indication of electron injection at probe wavelengths in the mid-IR (4.1 to 7.0 m). At 1.52 m interferences exist in the observed transient adsorption signal for the blanks

TECHNICAL AND ECONOMIC EVALUATION OF OPTIMAL VOLTAGE LEVEL FOR THE POWER SUPPLY OF DEEP MINE OPERATING HORIZONS

OpenAIRE

Shkrabets, F. P.; Ostapchuk, O. V.; Kozhevnikov, A. V.; Akulov, A. V.

2015-01-01

The most perspective option for possible deep mine power supply is the one with the deep input of 35 kV voltage by installing of underground 35kV/6 kV substation. This option is caused by the expected level of electrical loads, provided by mine development, the power consumers’ deep layout (considering the distance from the source to the shaft on the surface and from the shaft to the underground substation chamber) and primary and the most responsible power consumers (blind shaft lifting devi...

The carrier transport mechanism and band offset at the interface of ZnO/n-Si(111) heterojunction

Energy Technology Data Exchange (ETDEWEB)

Li, Yapeng, E-mail: liyp1984@126.com [School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong 723001 (China); Li, Yingfeng [School of Electrical Engineering, Shaanxi University of Technology, Hanzhong 723001 (China); Wang, Jianyuan [School of Nature and Applied Science, Northwestern Polytechnical University, Xi' an 710072 (China); He, Zhirong; Zhang, Yonghong; Yu, Qi; Hou, Juncai [School of Materials Science and Engineering, Shaanxi University of Technology, Hanzhong 723001 (China)

2017-05-15

Highlights: • The carrier transport deviated from ideal thermionic emission model. • One deep level present at the interface of ZnO/n-Si(111) heterojunction. • The band offsets of ZnO/n-Si(111) heterojunction are a type-II band alignment. - Abstract: The ZnO films were deposited on the surface of n-Si(111) substrate by pulsed laser deposition for fabrication of ZnO/n-Si(111) heterojunction. The carrier transport mechanism, deep level defects and band offsets at the interface of ZnO/n-Si(111) heterojunction were investigated by current- voltage measurement, deep level transient spectroscopy, X-ray photoelectron spectroscopy, respectively. The results showed that the barrier height and ideality factor values varied in the different linear voltage range by using the thermionic emission model, which was due to the deep level participated in carrier transport. Meanwhile, it was found that one deep level appeared at the interface of ZnO/n-Si(111) heterojunction with densities of the deep level about 8.5 × 10{sup 16} cm{sup −3} and activation energies about 224 m eV, which originated from O{sup 2−} vacancies of ZnO films. In addition, the valence band offset of the ZnO/n-Si(111) heterojunction can be calculated to be −2.4 ± 0.15 eV. The conduction band offset is deduced to be −3.5 ± 0.15 eV from the valence band offset value, indicating that the band offsets of ZnO/n-Si(111) heterojunction is a type-II band alignment.

Quantitative methods for structural characterization of proteins based on deep UV resonance Raman spectroscopy.

Science.gov (United States)

Shashilov, Victor A; Sikirzhytski, Vitali; Popova, Ludmila A; Lednev, Igor K

2010-09-01

Here we report on novel quantitative approaches for protein structural characterization using deep UV resonance Raman (DUVRR) spectroscopy. Specifically, we propose a new method combining hydrogen-deuterium (HD) exchange and Bayesian source separation for extracting the DUVRR signatures of various structural elements of aggregated proteins including the cross-beta core and unordered parts of amyloid fibrils. The proposed method is demonstrated using the set of DUVRR spectra of hen egg white lysozyme acquired at various stages of HD exchange. Prior information about the concentration matrix and the spectral features of the individual components was incorporated into the Bayesian equation to eliminate the ill-conditioning of the problem caused by 100% correlation of the concentration profiles of protonated and deuterated species. Secondary structure fractions obtained by partial least squares (PLS) and least squares support vector machines (LS-SVMs) were used as the initial guess for the Bayessian source separation. Advantages of the PLS and LS-SVMs methods over the classical least squares calibration (CLSC) are discussed and illustrated using the DUVRR data of the prion protein in its native and aggregated forms. Copyright (c) 2010 Elsevier Inc. All rights reserved.

Transient hypothyroidism after 131I treatment of Graves disease

International Nuclear Information System (INIS)

Liu Jianfeng; Fang Yi; Zhang Xiuli; Ye Genyao; Xing Jialiu; Zhang Youren

2003-01-01

Objective: To evaluate the results of the transient hypothyroidism after 131 I treatment of Graves disease. Methods: A total of 32 transient hypothyroidism patients treated with 131 I for Graves disease were studied and followed up. Results: Transient hypothyroidism occurred within 2-6 months after 131 I treatment and 19 patients were symptomatic. At diagnosis of transient hypothyroidism, T 3 and T 4 levels were decreased had normal, TSH levels were increased, normal or low. Follow-up examination found that 20 patients were normal and 12 patients had relapse of hyperthyroidism. Conclusions: Therapy of Graves disease with low doses of 131 I causes a high incidence of transient hypothyroidism. After recovery of transient hypothyroidism, some patients have relapse of hyperthyroidism

Dual deep modeling: multi-level modeling with dual potencies and its formalization in F-Logic.

Science.gov (United States)

Neumayr, Bernd; Schuetz, Christoph G; Jeusfeld, Manfred A; Schrefl, Michael

2018-01-01

An enterprise database contains a global, integrated, and consistent representation of a company's data. Multi-level modeling facilitates the definition and maintenance of such an integrated conceptual data model in a dynamic environment of changing data requirements of diverse applications. Multi-level models transcend the traditional separation of class and object with clabjects as the central modeling primitive, which allows for a more flexible and natural representation of many real-world use cases. In deep instantiation, the number of instantiation levels of a clabject or property is indicated by a single potency. Dual deep modeling (DDM) differentiates between source potency and target potency of a property or association and supports the flexible instantiation and refinement of the property by statements connecting clabjects at different modeling levels. DDM comes with multiple generalization of clabjects, subsetting/specialization of properties, and multi-level cardinality constraints. Examples are presented using a UML-style notation for DDM together with UML class and object diagrams for the representation of two-level user views derived from the multi-level model. Syntax and semantics of DDM are formalized and implemented in F-Logic, supporting the modeler with integrity checks and rich query facilities.

Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

Science.gov (United States)

García, H.; Castán, H.; Dueñas, S.; García-Hemme, E.; García-Hernansaz, R.; Montero, D.; González-Díaz, G.

2018-03-01

Intermediate-band semiconductors have attracted much attention for use in silicon-based solar cells and infrared detectors. In this work, n-Si substrates have been implanted with very high doses (1013 cm-2 and 1014 cm-2) of vanadium, which gives rise to a supersaturated layer inside the semiconductor. However, the Mott limit was not exceeded. The energy levels created in the supersaturated silicon were studied in detail by means of thermal admittance spectroscopy. We found a single deep center at energy near E C - 200 meV. This value agrees with one of the levels found for vanadium in silicon. The capture cross-section values of the deep levels were also calculated, and we found a relationship between the capture cross-section and the energy position of the deep levels which follows the Meyer-Neldel rule. This process usually appears in processes involving multiple excitations. The Meyer-Neldel energy values agree with those previously obtained for silicon supersaturated with titanium and for silicon contaminated with iron.

Oxygenation level and hemoglobin concentration in experimental tumor estimated by diffuse optical spectroscopy

Science.gov (United States)

Orlova, A. G.; Kirillin, M. Yu.; Volovetsky, A. B.; Shilyagina, N. Yu.; Sergeeva, E. A.; Golubiatnikov, G. Yu.; Turchin, I. V.

2017-07-01

Using diffuse optical spectroscopy the level of oxygenation and hemoglobin concentration in experimental tumor in comparison with normal muscle tissue of mice have been studied. Subcutaneously growing SKBR-3 was used as a tumor model. Continuous wave fiber probe diffuse optical spectroscopy system was employed. Optical properties extraction approach was based on diffusion approximation. Decreased blood oxygen saturation level and increased total hemoglobin content were demonstrated in the neoplasm. The main reason of such differences between tumor and norm was significant elevation of deoxyhemoglobin concentration in SKBR-3. The method can be useful for diagnosis of tumors as well as for study of blood flow parameters of tumor models with different angiogenic properties.

Hydrogenation of the ``new oxygen donor'' traps in silicon

Science.gov (United States)

Hölzlein, K.; Pensl, G.; Schulz, M.; Johnson, N. M.

1986-04-01

Hydrogenation was performed at moderate temperatures (≤300 °C) on Czochralski-grown Si samples that contained high concentrations of the oxygen-related ``new donor'' (ND) traps. From deep level transient spectroscopy, a comparison of spectra from untreated reference and hydrogenated material reveals that two different types of defect states contribute to the continuous energy distribution of the ND traps. The experimental and theoretical results further establish the ``SiOx interface'' model for the ND defects.

Neutron resonance spectroscopy on 113Cd: The p-wave levels

International Nuclear Information System (INIS)

Frankle, C.M.; Bowman, C.D.; Bowman, J.D.; Seestrom, S.J.; Sharapov, E.I.; Popov, Y.P.; Roberson, N.R.

1992-01-01

Weak levels in the compound nucleus 114 Cd were located by neutron time-of-flight spectroscopy techniques. Neutron capture measurements were performed with both a natural cadmium target and a highly enriched 113 Cd target. A total of 22 new resonances were located in the neutron energy interval 20-500 eV and were assumed to be p-wave. Resonance parameters, E 0 and gΓ n , are given for the newly identified levels. The p-wave strength function was determined to be 10 4 S 1 =2.8±0.8 and the average level spacing left-angle D 1 right-angle=14 eV. Comparison of the reduced widths with a Porter-Thomas distribution is consistent with having missed 15% of the p-wave levels

Investigation of carrier removal in electron irradiated silicon diodes

International Nuclear Information System (INIS)

Taylor, S.J.; Yamaguchi, M.; Matsuda, S.; Hisamatsu, T.; Kawasaki, O.

1997-01-01

We present a detailed study of n + p p + silicon diodes irradiated with fluences of 1 MeV electrons high enough to cause device failure due to majority carrier removal. Capacitance voltage (C V) measurements were used to monitor the change in the carrier concentration of the base of the device as a function of radiation fluence. These were compared to the defect spectra in the same region obtained by deep level transient spectroscopy, and to the current voltage characteristics of the device, both before and after annealing. We observed the expected deep levels with activation energies of 0.18 and 0.36 eV, but the C endash V results imply that other trap levels must play a more important role in the carrier removal process. copyright 1997 American Institute of Physics

Characterization of photo-induced valence tautomerism in a cobalt-dioxolene complex by ultrafast spectroscopy

International Nuclear Information System (INIS)

Beni, A; Bogani, L; Bussotti, L; Dei, A; Gentili, P L; Righini, R

2005-01-01

The valence tautomerism of low-spin Co III (Cat-N-BQ)(Cat-N-SQ) was investigated by means of UV-vis pump-probe transient absorption spectroscopy in chloroform. By exciting the CT transition of the complex at 480 nm, an intramolecular electron transfer process is selectively triggered. The photo-induced charge transfer is pursued by a cascade of two main molecular events characterized by the ultrafast transient absorption spectroscopy: the first gives rise to the metastable high-spin Co II (Cat-N-BQ) 2 that, secondly, reaches the chemical equilibrium with the reactant species

Characterization of photo-induced valence tautomerism in a cobalt-dioxolene complex by ultrafast spectroscopy

Science.gov (United States)

Beni, A.; Bogani, L.; Bussotti, L.; Dei, A.; Gentili, P. L.; Righini, R.

2005-01-01

The valence tautomerism of low-spin CoIII(Cat-N-BQ)(Cat-N-SQ) was investigated by means of UV-vis pump-probe transient absorption spectroscopy in chloroform. By exciting the CT transition of the complex at 480 nm, an intramolecular electron transfer process is selectively triggered. The photo-induced charge transfer is pursued by a cascade of two main molecular events characterized by the ultrafast transient absorption spectroscopy: the first gives rise to the metastable high-spin CoII(Cat-N-BQ)2 that, secondly, reaches the chemical equilibrium with the reactant species.

[Case of interval form of carbon monoxide poisoning without increased carboxyhemoglobin level diagnosed by characteristic MR spectroscopy findings].

Science.gov (United States)

Kamisawa, Tomoko; Ikawa, Masamichi; Hamano, Tadanori; Nagata, Miwako; Kimura, Hirohiko; Yoneda, Makoto

2014-01-01

A 67-year-old man living alone was admitted for acute disturbance of consciousness during winter. He presented with semicoma, a decorticate posture, and exaggerated tendon reflexes of the limbs, but brainstem reflexes were intact. The carboxyhemoglobin (COHb) level was normal in arterial blood gas on admission, and protein in cerebrospinal fluid was increased without pleocytosis. Brain MRI showed diffuse T2 high intensities in the deep white matter bilaterally without a contrast effect and abnormal T1 intensity in the pallidum. (1)H-MR spectroscopy (MRS) of the white matter lesion demonstrated findings suggesting demyelination as an increased choline peak, enhanced anaerobic metabolism as increased lactate and lipids peaks, and reduced neurons as a decreased N-acetylaspartate peak, which corresponded to delayed encephalopathy due to the interval form of carbon monoxide (CO) poisoning. The possibility of CO exposure due to coal briquette use 2 weeks before the symptomatic onset was indicated by his family, so he was diagnosed with CO poisoning. His consciousness slightly improved with corticosteroid therapy and repetitive hyperbaric oxygen therapy, but brain MRI and MRS findings did not improve. Characteristic MRS findings of leukoencephalopathy are helpful for diagnosing the interval form of CO poisoning in the case of a normal COHb level.

Ultrafast dynamic ellipsometry and spectroscopies of laser shocked materials

Energy Technology Data Exchange (ETDEWEB)

Mcgrane, Shawn David [Los Alamos National Laboratory; Bolme, Cindy B [Los Alamos National Laboratory; Whitley, Von H [Los Alamos National Laboratory; Moore, David S [Los Alamos National Laboratory

2010-01-01

Ultrafast ellipsometry and transient absorption spectroscopies are used to measure material dynamics under extreme conditions of temperature, pressure, and volumetric compression induced by shock wave loading with a chirped, spectrally clipped shock drive pulse.

FIRST RESULTS FROM THE CATALINA REAL-TIME TRANSIENT SURVEY

International Nuclear Information System (INIS)

Drake, A. J.; Djorgovski, S. G.; Mahabal, A.; Graham, M. J.; Williams, R.; Beshore, E.; Larson, S.; Boattini, A.; Gibbs, A.; Hill, R.; Kowalski, R.; Christensen, E.; Catelan, M.

2009-01-01

We report on the results from the first six months of the Catalina Real-Time Transient Survey (CRTS). In order to search for optical transients (OTs) with timescales of minutes to years, the CRTS analyses data from the Catalina Sky Survey which repeatedly covers 26,000 of square degrees on the sky. The CRTS provides a public stream of transients that are bright enough to be followed up using small telescopes. Since the beginning of the survey, all CRTS transients have been made available to astronomers around the world in real time using HTML tables,RSS feeds, and VOEvents. As part of our public outreach program, the detections are now also available in Keyhole Markup Language through Google Sky. The initial discoveries include over 350 unique OTs rising more than 2 mag from past measurements. Sixty two of these are classified as supernovae (SNe), based on light curves, prior deep imaging and spectroscopic data. Seventy seven are due to cataclysmic variables (CVs; only 13 previously known), while an additional 100 transients were too infrequently sampled to distinguish between faint CVs and SNe. The remaining OTs include active galactic nucleus, blazars, high-proper-motions stars, highly variable stars (such as UV Ceti stars), and transients of an unknown nature. Our results suggest that there is a large population of SNe missed by many current SN surveys because of selection biases. These objects appear to be associated with faint host galaxies. We also discuss the unexpected discovery of white dwarf binary systems through dramatic eclipses.

Decontamination by replacing soil and soil cover with deep-level soil in flower beds and vacant places in Northern Fukushima Prefecture

International Nuclear Information System (INIS)

Sugiura, Hiroyuki; Kawano, Keisuke; Kayama, Yukihiko; Koube, Nobuyuki

2012-01-01

Radioactivity decontamination by replacing soil and soil cover with deep-level soil and soil cover in flower beds and a vacant place in Northern Fukushima Prefecture were studied, which experienced radioactive contamination due to the accident at the TEPCO's Fukushima Daiichi Nuclear Power Plant. Radioactivity counting rate 1 cm above the soil surface after replacing surface soil with uncontaminated deep-level soil decreased to 13.7% of the control in gardens. The concentration of radioactive cesium in the cover soil increased after 132 days; however, it decreased in the old surface soil under the cover soil in flower beds. A 10 cm deep-level soil cover placed by heavy machinery decreased the radiation dose rate to 70.8% of the control and radioactivity counting rate to 24.6% in the vacant place. Replacing the radioactively contaminated surface soil and soil cover with a deep-level soil was a reasonable decontamination method for the garden and vacant place because it is quick, cost effective and labour efficient. (author)

Multi-level adaptive simulation of transient two-phase flow in heterogeneous porous media

KAUST Repository

Chueh, C.C.

2010-10-01

An implicit pressure and explicit saturation (IMPES) finite element method (FEM) incorporating a multi-level shock-type adaptive refinement technique is presented and applied to investigate transient two-phase flow in porous media. Local adaptive mesh refinement is implemented seamlessly with state-of-the-art artificial diffusion stabilization allowing simulations that achieve both high resolution and high accuracy. Two benchmark problems, modelling a single crack and a random porous medium, are used to demonstrate the robustness of the method and illustrate the capabilities of the adaptive refinement technique in resolving the saturation field and the complex interaction (transport phenomena) between two fluids in heterogeneous media. © 2010 Elsevier Ltd.

Macroscopic results for a novel oxygenated silicon material

International Nuclear Information System (INIS)

Watts, S.J.; Da Via', C.; Karpenko, A.

2002-01-01

High-resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O 2i ) concentration. Deep level transient spectroscopy measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4 kΩ cm, with an oxygen concentration of 10 15 and 10 17 cm -3 . Results for doping changes, leakage current and annealing behaviour after irradiation with 24 GeV/c protons are shown

Multi-level gene/MiRNA feature selection using deep belief nets and active learning.

Science.gov (United States)

Ibrahim, Rania; Yousri, Noha A; Ismail, Mohamed A; El-Makky, Nagwa M

2014-01-01

Selecting the most discriminative genes/miRNAs has been raised as an important task in bioinformatics to enhance disease classifiers and to mitigate the dimensionality curse problem. Original feature selection methods choose genes/miRNAs based on their individual features regardless of how they perform together. Considering group features instead of individual ones provides a better view for selecting the most informative genes/miRNAs. Recently, deep learning has proven its ability in representing the data in multiple levels of abstraction, allowing for better discrimination between different classes. However, the idea of using deep learning for feature selection is not widely used in the bioinformatics field yet. In this paper, a novel multi-level feature selection approach named MLFS is proposed for selecting genes/miRNAs based on expression profiles. The approach is based on both deep and active learning. Moreover, an extension to use the technique for miRNAs is presented by considering the biological relation between miRNAs and genes. Experimental results show that the approach was able to outperform classical feature selection methods in hepatocellular carcinoma (HCC) by 9%, lung cancer by 6% and breast cancer by around 10% in F1-measure. Results also show the enhancement in F1-measure of our approach over recently related work in [1] and [2].

Picosecond charge transport in rutile at high carrier densities studiedby transient terahertz spectroscopy

Czech Academy of Sciences Publication Activity Database

Zajac, Vít; Němec, Hynek; Kužel, Petr

2016-01-01

Roč. 94, č. 11 (2016), 1-9, č. článku 115206. ISSN 1098-0121 R&D Projects: GA ČR GA13-12386S Institutional support: RVO:68378271 Keywords : terahertz spectroscopy * charge transport * TiO 2 * rutile * ultrafast spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

Characterization of photo-induced valence tautomerism in a cobalt-dioxolene complex by ultrafast spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Beni, A [Dipartimento di Chimica, Universita di Firenze, via della Lastruccia 3, 50019 Sesto Fiorentino, Florence (Italy); Bogani, L [Dipartimento di Chimica, Universita di Firenze, via della Lastruccia 3, 50019 Sesto Fiorentino, Florence (Italy); Bussotti, L [LENS, Universita di Firenze, Via Nello Carrara 1, 50019 Sesto Fiorentino, Florence (Italy); Dei, A [Dipartimento di Chimica, Universita di Firenze, via della Lastruccia 3, 50019 Sesto Fiorentino, Florence (Italy); Gentili, P L [LENS, Universita di Firenze, Via Nello Carrara 1, 50019 Sesto Fiorentino, Florence (Italy); Righini, R [Dipartimento di Chimica, Universita di Firenze, via della Lastruccia 3, 50019 Sesto Fiorentino, Florence (Italy)

2005-01-01

The valence tautomerism of low-spin Co{sup III}(Cat-N-BQ)(Cat-N-SQ) was investigated by means of UV-vis pump-probe transient absorption spectroscopy in chloroform. By exciting the CT transition of the complex at 480 nm, an intramolecular electron transfer process is selectively triggered. The photo-induced charge transfer is pursued by a cascade of two main molecular events characterized by the ultrafast transient absorption spectroscopy: the first gives rise to the metastable high-spin Co{sup II}(Cat-N-BQ){sub 2} that, secondly, reaches the chemical equilibrium with the reactant species.

Rapid High-Level Production of Functional HIV Broadly Neutralizing Monoclonal Antibodies in Transient Plant Expression Systems

Science.gov (United States)

Rosenberg, Yvonne; Sack, Markus; Montefiori, David; Forthal, Donald; Mao, Lingjun; -Abanto, Segundo Hernandez; Urban, Lori; Landucci, Gary; Fischer, Rainer; Jiang, Xiaoming

2013-01-01

Passive immunotherapy using anti-HIV broadly neutralizing monoclonal antibodies (mAbs) has shown promise as an HIV treatment, reducing mother-to-child-transmission (MTCT) of simian/human immunodeficiency virus (SHIV) in non-human primates and decreasing viral rebound in patients who ceased receiving anti-viral drugs. In addition, a cocktail of potent mAbs may be useful as mucosal microbicides and provide an effective therapy for post-exposure prophylaxis. However, even highly neutralizing HIV mAbs used today may lose their effectiveness if resistance occurs, requiring the rapid production of new or engineered mAbs on an ongoing basis in order to counteract the viral resistance or the spread of a certain HIV-1 clade in a particular region or patient. Plant-based expression systems are fast, inexpensive and scalable and are becoming increasingly popular for the production of proteins and monoclonal antibodies. In the present study, Agrobacterium-mediated transient transfection of plants, utilizing two species of Nicotiana, have been tested to rapidly produce high levels of an HIV 89.6PΔ140env and several well-studied anti-HIV neutralizing monoclonal antibodies (b12, 2G12, 2F5, 4E10, m43, VRC01) or a single chain antibody construct (m9), for evaluation in cell-based viral inhibition assays. The protein-A purified plant-derived antibodies were intact, efficiently bound HIV envelope, and were equivalent to, or in one case better than, their counterparts produced in mammalian CHO or HEK-293 cells in both neutralization and antibody dependent viral inhibition assays. These data indicate that transient plant-based transient expression systems are very adaptable and could rapidly generate high levels of newly identified functional recombinant HIV neutralizing antibodies when required. In addition, they warrant detailed cost-benefit analysis of prolonged incubation in plants to further increase mAb production. PMID:23533588

Rapid high-level production of functional HIV broadly neutralizing monoclonal antibodies in transient plant expression systems.

Directory of Open Access Journals (Sweden)

Yvonne Rosenberg

Full Text Available Passive immunotherapy using anti-HIV broadly neutralizing monoclonal antibodies (mAbs has shown promise as an HIV treatment, reducing mother-to-child-transmission (MTCT of simian/human immunodeficiency virus (SHIV in non-human primates and decreasing viral rebound in patients who ceased receiving anti-viral drugs. In addition, a cocktail of potent mAbs may be useful as mucosal microbicides and provide an effective therapy for post-exposure prophylaxis. However, even highly neutralizing HIV mAbs used today may lose their effectiveness if resistance occurs, requiring the rapid production of new or engineered mAbs on an ongoing basis in order to counteract the viral resistance or the spread of a certain HIV-1 clade in a particular region or patient. Plant-based expression systems are fast, inexpensive and scalable and are becoming increasingly popular for the production of proteins and monoclonal antibodies. In the present study, Agrobacterium-mediated transient transfection of plants, utilizing two species of Nicotiana, have been tested to rapidly produce high levels of an HIV 89.6PΔ140env and several well-studied anti-HIV neutralizing monoclonal antibodies (b12, 2G12, 2F5, 4E10, m43, VRC01 or a single chain antibody construct (m9, for evaluation in cell-based viral inhibition assays. The protein-A purified plant-derived antibodies were intact, efficiently bound HIV envelope, and were equivalent to, or in one case better than, their counterparts produced in mammalian CHO or HEK-293 cells in both neutralization and antibody dependent viral inhibition assays. These data indicate that transient plant-based transient expression systems are very adaptable and could rapidly generate high levels of newly identified functional recombinant HIV neutralizing antibodies when required. In addition, they warrant detailed cost-benefit analysis of prolonged incubation in plants to further increase mAb production.

Implementation of Deep Ultraviolet Raman Spectroscopy

DEFF Research Database (Denmark)

Liu, Chuan

of the aromatics, Toluene and Naphthalene, in the gasoline. Chapter 6 shows examples of other applications of DUV Raman spectroscopy, for instance for the illegal red food additive: Sudan I. For this dye Raman spectra - useful to indicate an unwanted presence - could not be obtained with green or blue laser line...... Raman spectrometry was further applied to detect another illegal food additive, Melamine, in milk sample. It was shown that the DUV constitutes a more sensitive measurement method than traditional Raman spectrometry and realizes a direct detection in liquid milk. In another research field regarding...... spectra of the gasoline samples. It is virtually unimportant what the rest of the sample consisted of. The most intense characteristic band is located at 1381 cm-1. The Raman spectra of home-made artificial gasoline mixtures - with gradually increasing Naphthalene contents - can be used to determine...

Albedo Neutron Dosimetry in a Deep Geological Disposal Repository for High-Level Nuclear Waste.

Science.gov (United States)

Pang, Bo; Becker, Frank

2017-04-28

Albedo neutron dosemeter is the German official personal neutron dosemeter in mixed radiation fields where neutrons contribute to personal dose. In deep geological repositories for high-level nuclear waste, where neutrons can dominate the radiation field, it is of interest to investigate the performance of albedo neutron dosemeter in such facilities. In this study, the deep geological repository is represented by a shielding cask loaded with spent nuclear fuel placed inside a rock salt emplacement drift. Due to the backscattering of neutrons in the drift, issues concerning calibration of the dosemeter arise. Field-specific calibration of the albedo neutron dosemeter was hence performed with Monte Carlo simulations. In order to assess the applicability of the albedo neutron dosemeter in a deep geological repository over a long time scale, spent nuclear fuel with different ages of 50, 100 and 500 years were investigated. It was found out, that the neutron radiation field in a deep geological repository can be assigned to the application area 'N1' of the albedo neutron dosemeter, which is typical in reactors and accelerators with heavy shielding. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Ultrafast transient-absorption of the solvated electron in water

International Nuclear Information System (INIS)

Kimura, Y.; Alfano, J.C.; Walhout, P.K.; Barbara, P.F.

1994-01-01

Ultrafast near infrared (NIR)-pump/variable wavelength probe transient-absorption spectroscopy has been performed on the aqueous solvated electron. The photodynamics of the solvated electron excited to its p-state are qualitatively similar to previous measurements of the dynamics of photoinjected electrons at high energy. This result confirms the previous interpretation of photoinjected electron dynamics as having a rate-limiting bottleneck at low energies presumably involving the p-state

Photophysical characterization and time-resolved spectroscopy of a anthradithiophene dimer: exploring the role of conformation in singlet fission

KAUST Repository

Dean, Jacob C.; Zhang, Ruomeng; Hallani, Rawad K.; Pensack, Ryan D.; Sanders, Samuel N.; Oblinsky, Daniel G.; Parkin, Sean R.; Campos, Luis M.; Anthony, John E.; Scholes, Gregory D.

2017-01-01

carried out in toluene and acetone solution via absorption and fluorescence spectroscopy, and their photo-initiated dynamics were investigated with time-resolved fluorescence (TRF) and transient absorption (TA) spectroscopy. In accordance

Cpuf: Chirped-Pulse Microwave Spectroscopy in Pulsed Uniform Supersonic Flows

Science.gov (United States)

Suits, Arthur; Abeysekera, Chamara; Zack, Lindsay N.; Joalland, Baptiste; Ariyasingha, Nuwandi M.; Park, Barratt; Field, Robert W.; Sims, Ian

2015-06-01

Chirped-pulse Fourier-transform microwave spectroscopy has stimulated a resurgence of interest in rotational spectroscopy owing to the dramatic reduction in spectral acquisition time it enjoys when compared to cavity-based instruments. This suggests that it might be possible to adapt the method to study chemical reaction dynamics and even chemical kinetics using rotational spectroscopy. The great advantage of this would be clear, quantifiable spectroscopic signatures for polyatomic products as well as the possibility to identify and characterize new radical reaction products and transient intermediates. To achieve this, however, several conditions must be met: 1) products must be thermalized at low temperature to maximize the population difference needed to achieve adequate signal levels and to permit product quantification based on the rotational line strength; 2) a large density and volume of reaction products is also needed to achieve adequate signal levels; and 3) for kinetics studies, a uniform density and temperature is needed throughout the course of the reaction. These conditions are all happily met by the uniform supersonic flow produced from a Laval nozzle expansion. In collaboration with the Field group at MIT we have developed a new instrument we term a CPUF (Chirped-pulse/Uniform Flow) spectrometer in which we can study reaction dynamics, photochemistry and kinetics using broadband microwave and millimeter wave spectroscopy as a product probe. We will illustrate the performance of the system with a few examples of photodissociation and reaction dynamics, and also discuss a number of challenges unique to the application of chirped-pulse microwave spectroscopy in the collisional environment of the flow. Future directions and opportunities for application of CPUF will also be explored.

Mid-infrared quantum cascade laser spectroscopy probing of the ...

Indian Academy of Sciences (India)

Aparajeo Chattopadhyay

2018-05-07

May 7, 2018 ... cm3 molecule. −1 s. −1 ... Quantum cascade laser; time-resolved mid-infrared spectroscopy; transient absorption; peroxy radicals .... peak of the laser emission profile. .... cal with O2 is a termolecular reaction (Eq. 3) and the.

Testing the deep-crustal heating model using quiescent neutron-star very-faint X-ray transients and the possibility of partially accreted crusts in accreting neutron stars

Science.gov (United States)

Wijnands, R.; Degenaar, N.; Page, D.

2013-07-01

It is assumed that accreting neutron stars in low-mass X-ray binaries are heated due to the compression of the existing crust by the freshly accreted matter which gives rise to a variety of nuclear reactions in the crust. It has been shown that most of the energy is released deep in the crust by pycnonuclear reactions involving low-Z elements (the deep-crustal heating scenario). In this paper we discuss if neutron stars in the so-called very-faint X-ray transients (VFXTs; those transients have outburst peak 2-10 keV X-ray luminosities short-term (less than a few tens of thousands of years) and the one throughout their lifetime. The latter is particularly important because it can be so low that the neutron stars might not have accreted enough matter to become massive enough that enhanced core cooling processes become active. Therefore, they could be relatively warm compared to other systems for which such enhanced cooling processes have been inferred. However, the amount of matter can also not be too low because then the crust might not have been replaced significantly by accreted matter and thus a hybrid crust of partly accreted and partly original, albeit further compressed matter, might be present. This would inhibit the full range of pycnonuclear reactions to occur and therefore possibly decrease the amount of heat deposited in the crust. More detailed calculations of the heating and cooling properties of such hybrid crusts have to be performed to be conclusive. Furthermore, better understanding is needed about how a hybrid crust affects other properties such as the thermal conductivity. A potentially interesting way to observe the effects of a hybrid crust on the heating and cooling of an accreting neutron star is to observe the crust cooling of such a neutron star after a prolonged (years to decades) accretion episode and compare the results with similar studies performed for neutron stars with a fully accreted crust. We also show that some individual neutron

Plan of deep underground construction for investigations on high-level radioactive waste storage

International Nuclear Information System (INIS)

Mayanovskij, M.S.

1996-01-01

The program of studies of the Japanese PNC corporation on construction of deep underground storage for high-level radioactive wastes is presented. The program is intended for 20 years. The total construction costs equal about 20 billion yen. The total cost of the project is equal to 60 billion yen. The underground part is planned to reach 1000 m depth

Vitrification treatment options for disposal of greater-than-Class-C low-level waste in a deep geologic repository

International Nuclear Information System (INIS)

Fullmer, K.S.; Fish, L.W.; Fischer, D.K.

1994-11-01

The Department of Energy (DOE), in keeping with their responsibility under Public Law 99-240, the Low-Level Radioactive Waste Policy Amendments Act of 1985, is investigating several disposal options for greater-than-Class C low-level waste (GTCC LLW), including emplacement in a deep geologic repository. At the present time vitrification, namely borosilicate glass, is the standard waste form assumed for high-level waste accepted into the Civilian Radioactive Waste Management System. This report supports DOE's investigation of the deep geologic disposal option by comparing the vitrification treatments that are able to convert those GTCC LLWs that are inherently migratory into stable waste forms acceptable for disposal in a deep geologic repository. Eight vitrification treatments that utilize glass, glass ceramic, or basalt waste form matrices are identified. Six of these are discussed in detail, stating the advantages and limitations of each relative to their ability to immobilize GTCC LLW. The report concludes that the waste form most likely to provide the best composite of performance characteristics for GTCC process waste is Iron Enriched Basalt 4 (IEB4)

Paleosols as Archives of Environmental Change in Deep Time

Science.gov (United States)

Crowley, Quentin

2015-04-01

Paleosols develop at the geosphere-atmosphere interface and potentially provide an archive of environmental conditions at the time of their formation. Although paleosols from deep time can be difficult to recognize due to the masking of pedogenic features by metamorphism and deformation, they may record transient (i.e. time-dependent) events which are often difficult to recognize in other geological proxies. Paleosols from the Archean and Paleoproterozoic are rare and complex to study, but offer an opportunity to gain insight into what may be relatively short-scale temporal variations in the Earth's atmospheric composition. For instance, it is widely believed that atmospheric oxygen saturation rose from 10E-02 PAL at the Great Oxidation Event (GOE) at ca. 2.4 Ga. Until recently however, chemical or physical evidence from paleosols for earlier oxygenation events were generally thought to be lacking. Recent studies of paleosols from eastern India (Keonjhar Paleosol, Singhbhum Craton) and South Africa (Nsuze Paleosol, Kaapvaal Craton) have provided chemical evidence for transient Mesoarchean atmospheric oxygenation at ca. 3.0 Ga. These paleosols are considered to preserve the earliest known vestiges of terrestrial oxidative weathering, signifying a transient, early oxygen accumulation in the Earth's atmosphere. This has far-reaching implications from both atmospheric and biological evolutionary perspectives in that chemical signatures preserved in these Mesoarchean paleosols are thought to signify the presence of molecular oxygen at levels higher than those attributable to photo-dissociation of atmospheric water alone. Such elevated levels of atmospheric oxygen could only be due to the presence of a sufficiently large biomass of micro-organisms capable of oxidative photosynthesis. Although the Archean-Paleoproterozoic paleosol geological record is fragmentary and geochemical signatures are not necessarily straightforward to interpret, these paleosols provide an

Radon 222 levels in deep well waters of Toluca municipality (county)

International Nuclear Information System (INIS)

Olguin Gutierrez, Maria Teresa.

1990-01-01

The levels of Radon 222 were determined in 46 deep (50-180m) wells in the city and county of Toluca, as well as the annual radiation dose that the stomach admits when ingesting such water. The method used for the quantification of Radon 222 was liquid scintillation counting. The result revealed that levels of Radon 222 in the studied area in the range of 0 to 320 pCi l -1 . In the case of the equivalent annual dose that the stomach (empty) admits due to ingestion of water from the wells, values are in an interval between 0 to 95 mrem a -1 . This values are well below the level established by the International Commission of Radiological Protection (ICRP). The wells that had the higher concentration of Radon 222 were found in the regions of Lodo Prieto, Seminario; San Antonio Buenavista and La Trinidad Huichochitlan. (Author)

A Closer Look at Deep Learning Neural Networks with Low-level Spectral Periodicity Features

DEFF Research Database (Denmark)

Sturm, Bob L.; Kereliuk, Corey; Pikrakis, Aggelos

2014-01-01

Systems built using deep learning neural networks trained on low-level spectral periodicity features (DeSPerF) reproduced the most “ground truth” of the systems submitted to the MIREX 2013 task, “Audio Latin Genre Classification.” To answer why this was the case, we take a closer look...

Transient fault tolerant control for vehicle brake-by-wire systems

International Nuclear Information System (INIS)

Huang, Shuang; Zhou, Chunjie; Yang, Lili; Qin, Yuanqing; Huang, Xiongfeng; Hu, Bowen

2016-01-01

Brake-by-wire (BBW) systems that have no mechanical linkage between the brake pedal and the brake mechanism are expected to improve vehicle safety through better braking capability. However, transient faults in BBW systems can cause dangerous driving situations. Most existing research in this area focuses on the brake control mechanism, but very few studies try to solve the problem associated with transient fault propagation and evolution in the brake control system hierarchy. In this paper, a hierarchical transient fault tolerant scheme with embedded intelligence and resilient coordination for BBW system is proposed based on the analysis of transient fault propagation characteristics. In this scheme, most transient faults are tackled rapidly by a signature-based detection method at the node level, and the remaining transient faults, which cannot be detected directly at the node level and could degrade the system performance through fault propagation and evolution, are detected and recovered through function and structure models at the system level. To jointly accommodate these BBW transient faults at the system level, a sliding mode control algorithm and a task reallocation strategy are designed. A simulation platform based on Architecture Analysis and Design Language (AADL) is established to evaluate the task reallocation strategy, and a hardware-in-the-loop simulation is carried out to validate the proposed scheme systematically. Experimental results show the effectiveness of this new approach to BBW systems. - Highlights: • We propose a hierarchical transient fault tolerant scheme for BBW systems. • A sliding mode algorithm and a task strategy are designed to tackle transient fault. • The effectiveness of the scheme is verified in both simulation and HIL environments.

Energy and orientation dependence of electron-irradiation-induced defects in InP

International Nuclear Information System (INIS)

Sibille, A.; Suski, J.; LeRoux, G.

1984-01-01

The concentration of several electron-irradiation-induced deep defect levels in InP has been measured by deep-level transient spectroscopy (DLTS) as a function of electron energy. The dominant centers exhibit a threshold at about 100 keV, which clearly points to a primary production event by electron--phosphorus-atom collision. This unambiguous determination allowed a test of the recently proposed orientation dependence technique to find the nature of the sublattice involved in the collision process for III-V compounds. A good quantitative agreement is obtained with a hard-sphere model for secondary collisions if disorientation of the beam in the sample is taken into account. Other traps exhibit higher thresholds which correspond either to indium-atom displacements or to the involvement of secondary collisions in the production event

Investigation of defects in Cu(In,Ga)S{sub 2} and Cu(In,Ga)Se{sub 2} solar cells by space charge spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Riediger, Julia; Ohland, Joerg; Knipper, Martin; Parisi, Juergen; Riedel, Ingo [Thin Film Photovoltaics, Energy- and Semiconductor Research Laboratory, University of Oldenburg, D-26111 Oldenburg (Germany); Meeder, Alexander [Soltecture GmbH, 12487 Berlin (Germany)

2012-07-01

If deep defect states in the absorber of a solar cell act as recombination centers, they may limit the carrier lifetime and thus the open circuit voltage. This is related to the defect's activation energy and spatial position. In this study the defect landscape of chalcopyrite thin film solar cells with varied absorber composition was investigated by space charge spectroscopy. The absorber layer in Cu(In,Ga)S{sub 2} samples arises from rapid thermal process (RTP) in sulfur vapor while Cu(In,Ga)Se{sub 2} absorbers were processed via co-evaporation of the constituents. Several defect states were found by deep level spectroscopy (DLTS) and thermal admittance spectroscopy (TAS). With the knowledge of the defect activation energies we derived the spatial defect concentrations from (illuminated) capacitance-voltage (CV) measurements and discuss the results for both material systems. To identify the often discussed ''N1'' defect, the measurements were repeated after annealing and changes in the defect spectra were evaluated.

Electrical characterization of Au/ZnO/Si Schottky contact

International Nuclear Information System (INIS)

Asghar, M; Mahmood, K; Faisal, M; Hasan, M A

2013-01-01

In this study, temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements have been performed on Au/ZnO/Si Schottky barrier diode in the range 150 – 400K. The room temperature values for ideality factor and barrier height found to be 2.68 and 0.68 eV respectively. From the temperature dependence of I–V, the ideality factor was observed to decrease with increasing temperature and barrier height increased with increasing temperature. The observed barrier height trend was disagreeing with the negative temperature coefficient for semiconductor. A deep defect with activation energy 0.57 eV below the conduction band was observed using the saturation current plot and deep level transient spectroscopy.

Supernovae in Low-Redshift Galaxy Clusters: Observations by the Wise Observatory Optical Transient Search (WOOTS)

OpenAIRE

Gal-Yam, Avishay; Maoz, Dan; Guhathakurta, Puragra; Filippenko, Alexei V.

2007-01-01

We describe the Wise Observatory Optical Transient Search (WOOTS), a survey for supernovae (SNe) and other variable and transient objects in the fields of redshift 0.06-0.2 Abell galaxy clusters. We present the survey design and data-analysis procedures, and our object detection and follow-up strategies. We have obtained follow-up spectroscopy for all viable SN candidates, and present the resulting SN sample here. Out of the 12 SNe we have discovered, seven are associated with our target clus...

The Emergence of the Infrared Transient VVV-WIT-06

Science.gov (United States)

Minniti, D.; Saito, R. K.; Forster, F.; Pignata, G.; Ivanov, V. D.; Lucas, P. W.; Beamin, J. C.; Borissova, J.; Catelan, M.; Gonzalez, O. A.; Hempel, M.; Hsiao, E.; Kurtev, R.; Majaess, D.; Masetti, N.; Morrell, N. I.; Phillips, M. M.; Pullen, J. B.; Rejkuba, M.; Smith, L.; Surot, F.; Valenti, E.; Zoccali, M.

2017-11-01

We report the discovery of an enigmatic large-amplitude ({{Δ }}{Ks}> 10.5 mag) transient event in near-IR data obtained by the VISTA Variables in the Via Lactea (VVV) ESO Public Survey. The object (designated VVV-WIT-06) is located at R.A. = 17:07:18.917, decl. = -39:06:26.45 (J2000), corresponding to Galactic coordinates l = 347.14539, b = 0.88522. It exhibits a clear eruption, peaking at Ks = 9 mag during 2013 July and fading to {Ks}˜ 16.5 in 2017. Our late near-IR spectra show post-outburst emission lines, including some broad emission lines (upward of {FWHM}˜ 3000 km s-1). We estimate a total extinction of {A}V=10{--}15 mag in the surrounding field, and no progenitor was observed in ZYJHKs images obtained during 2010-2012 (down to {K}s> 18.5 mag). Subsequent deep near-IR imaging and spectroscopy, in concert with the available multiband photometry, indicate that VVV-WIT-06 may be either: (I) the closest Type I SN observed in about 400 years, (II) an exotic high-amplitude nova that would extend the known realm of such objects, or (III) a stellar merger. In all of these cases, VVV-WIT-06 is a fascinating and curious astrophysical target under any of the scenarios considered. Based on observations taken within the ESO programmes 179.B-2002 and 298.D-5048, and on observations carried out at the Magellan Telescope at LCO.

Infrared photon-echo spectroscopy of water : The thermalization effects

NARCIS (Netherlands)

Pshenichnikov, Maxim S.; Yeremenko, Sergey; Wiersma, Douwe A.; Kobayashi, Takayoshi; Kobayashi, Tetsuro; Nelson, Keith A.; Okada, Tadashi; Silvestri, Sandro De

2005-01-01

The larger part of the nonlinear response in IR photon-echo and transient-grating spectroscopy on HDO-D2O mixtures at > 1-ps delays is found to originate from the D2O refractive index modulation due to local volume thermalization.

WFIRST: Science from Deep Field Surveys

Science.gov (United States)

Koekemoer, Anton; Foley, Ryan; WFIRST Deep Field Working Group

2018-01-01

WFIRST will enable deep field imaging across much larger areas than those previously obtained with Hubble, opening up completely new areas of parameter space for extragalactic deep fields including cosmology, supernova and galaxy evolution science. The instantaneous field of view of the Wide Field Instrument (WFI) is about 0.3 square degrees, which would for example yield an Ultra Deep Field (UDF) reaching similar depths at visible and near-infrared wavelengths to that obtained with Hubble, over an area about 100-200 times larger, for a comparable investment in time. Moreover, wider fields on scales of 10-20 square degrees could achieve depths comparable to large HST surveys at medium depths such as GOODS and CANDELS, and would enable multi-epoch supernova science that could be matched in area to LSST Deep Drilling fields or other large survey areas. Such fields may benefit from being placed on locations in the sky that have ancillary multi-band imaging or spectroscopy from other facilities, from the ground or in space. The WFIRST Deep Fields Working Group has been examining the science considerations for various types of deep fields that may be obtained with WFIRST, and present here a summary of the various properties of different locations in the sky that may be considered for future deep fields with WFIRST.

Using Deep Learning Techniques to Forecast Environmental Consumption Level

Directory of Open Access Journals (Sweden)

Donghyun Lee

2017-10-01

Full Text Available Artificial intelligence is a promising futuristic concept in the field of science and technology, and is widely used in new industries. The deep-learning technology leads to performance enhancement and generalization of artificial intelligence technology. The global leader in the field of information technology has declared its intention to utilize the deep-learning technology to solve environmental problems such as climate change, but few environmental applications have so far been developed. This study uses deep-learning technologies in the environmental field to predict the status of pro-environmental consumption. We predicted the pro-environmental consumption index based on Google search query data, using a recurrent neural network (RNN model. To verify the accuracy of the index, we compared the prediction accuracy of the RNN model with that of the ordinary least square and artificial neural network models. The RNN model predicts the pro-environmental consumption index better than any other model. We expect the RNN model to perform still better in a big data environment because the deep-learning technologies would be increasingly sophisticated as the volume of data grows. Moreover, the framework of this study could be useful in environmental forecasting to prevent damage caused by climate change.

Linear photophysics, two-photon absorption and femtosecond transient absorption spectroscopy of styryl dye bases

Energy Technology Data Exchange (ETDEWEB)

Shaydyuk, Ye.O. [Institute of Physics, Prospect Nauki, 46, Kyiv-28 03028 Ukraine (Ukraine); Levchenko, S.M. [Institute of Molecular Biology and Genetics, 150, Akademika Zabolotnoho Str., Kyiv 036803 (Ukraine); Kurhuzenkau, S.A. [Department of Chemistry, University of Parma, Parco Area delle Scienze 17/A, Parma 43124 (Italy); Anderson, D. [NanoScienece Technology Center, University of Central Florida, 12424 Research Parkway, PAV400, Orlando, FL 32826 (United States); Department of Chemistry, University of Central Florida, 4111 Libra Drive, PSB225, Orlando, FL 32816 (United States); Masunov, A.E. [NanoScienece Technology Center, University of Central Florida, 12424 Research Parkway, PAV400, Orlando, FL 32826 (United States); Department of Chemistry, University of Central Florida, 4111 Libra Drive, PSB225, Orlando, FL 32816 (United States); South Ural State University, Lenin pr. 76, Chelyabinsk 454080 (Russian Federation); Department of Condensed Matter Physics, National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow 115409 (Russian Federation); Photochemistry Center RAS, ul. Novatorov 7a, Moscow 119421 (Russian Federation); Kachkovsky, O.D.; Slominsky, Yu.L.; Bricks, J.L. [Insitute of Organic Chemistry, Murmanskaya Street, 5, Kyiv 03094 (Ukraine); Belfield, K.D. [College of Science and Liberal Arts, New Jersey Institute of Technology, University Heights, Newark, NJ 07102 (United States); School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi’an, 710062 (China); Bondar, M.V., E-mail: mbondar@mail.ucf.edu [Institute of Physics, Prospect Nauki, 46, Kyiv-28 03028 Ukraine (Ukraine)

2017-03-15

The steady-state and time-resolved linear spectral properties, two-photon absorption spectra and fast relaxation processes in the excited states of styryl base-type derivatives were investigated. The nature of linear absorption, fluorescence and excitation anisotropy spectra were analyzed in solvents of different polarity at room temperature and specific dependence of the solvatochromic behavior on the donor-acceptor strength of the terminal substituents was shown. Two-photon absorption (2PA) efficiency of styryl dye bases was determined in a broad spectral range using two-photon induced fluorescence technique, and cross-sections maxima of ~ 100 GM were found. The excited state absorption (ESA) and fast relaxation processes in the molecular structures were investigated by transient absorption femtosecond pump-probe methodology. The role of twisted intramolecular charge transfer (TICT) effect in the excited state of styryl dye base with dimethylamino substituent was shown. The experimental spectroscopic data were also verified by quantum chemical calculations at the Time Dependent Density Functional Theory level, combined with a polarizable continuum model.

Linking optical and infrared observations with gravitational wave sources through transient variability

International Nuclear Information System (INIS)

Stubbs, C W

2008-01-01

Optical and infrared observations have thus far detected more celestial cataclysms than have been seen in gravity waves (GW). This argues that we should search for gravity wave signatures that correspond to transient variables seen at optical wavelengths, at precisely known positions. There is an unknown time delay between the optical and gravitational transient, but knowing the source location precisely specifies the corresponding time delays across the gravitational antenna network as a function of the GW-to-optical arrival time difference. Optical searches should detect virtually all supernovae that are plausible gravitational radiation sources. The transient optical signature expected from merging compact objects is not as well understood, but there are good reasons to expect detectable transient optical/IR emission from most of these sources as well. The next generation of deep wide-field surveys (for example PanSTARRS and LSST) will be sensitive to subtle optical variability, but we need to fill the 'blind spots' that exist in the galactic plane, and for optically bright transient sources. In particular, a galactic plane variability survey at λ∼ 2 μm seems worthwhile. Science would benefit from closer coordination between the various optical survey projects and the gravity wave community

Novel thermal donors generated in Cz silicon by prolonged annealing at 470oC

International Nuclear Information System (INIS)

Kamiura, Y.; Hashimoto, F.; Yoneta, M.

1989-01-01

A new family of shallower double donors (New TD's) than the normal family of thermal donors (TD's) currently studied has been discovered by DLTS (Deep Level Transient Spectroscopy) and Hall measurements. The both families exhibit qualitatively the same kinetic behaviors at 470 o C, but New TD's have smaller generation rates and higher thermal stability, correlating strongly with the NL10 EPR center. The hypothesis that an unknown nucleus involved in the core of New TD's plays an essential role in lowering their level ionization energies and stabilizing their donor activity is proposed to explain the results. (author) 11 refs., 6 figs

Radio interference and transient field from gas-insulated substations

International Nuclear Information System (INIS)

Harvey, S.M.; Wong, P.S.; Balma, P.M.

1995-01-01

Gas-insulated substations (GIS), owing to their compact nature, offer an attractive alternative to conventional substations in areas where space is limited, such as in urban areas. Consequently, it is important to address the issue of environmental conditions within the substation and in the surrounding areas. This paper reports the result of radio interference (RI) and transient field measurements at two GIS in Ontario, Canada. For comparison with RI levels taken at the GIS, RI levels outside two hospitals in the Toronto area were also measured. The transient field study covers electromagnetic interference (EMI) levels generated during switching operations, and includes measurements inside and outside the GIS. Measurements show that RI levels from the GIS were either below background levels, or contributed little to the background. RI levels outside the GIS and the hospitals were similar. Peak transient field values up to 580 V/m were measured inside the station building, and dropped to background values of 10 V/m at about 120 m from the station. The transient field (E) dropped off at a rate of 3/2 power with distance (d) from the air-insulated 115 kV bus, i.e. E ∝ d -1.5

The roles of the temperature on the structural and electronic properties of deep-level V{sub As}V{sub Ga} defects in gallium arsenide

Energy Technology Data Exchange (ETDEWEB)

Ma, Deming, E-mail: xautmdm@163.com; Chen, Xi; Qiao, Hongbo; Shi, Wei; Li, Enling

2015-07-15

Highlights: • The energy gap of the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} is 0.82 eV. • Proves that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. • Proves that EL2 and EL6 deep-level defects can transform into each other. • Temperature has an important effect on the microstructure of deep-level defects. - Abstract: The roles of temperature on the structural and electronic properties of V{sub As}V{sub Ga} defects in gallium arsenide have been studied by using ab-initio molecular dynamic (MD) simulation. Our calculated results show that the relatively stable quaternary complex defect of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} can be converted from the V{sub As}V{sub Ga} complex clusters defect between 300 K and 1173 K; however, from 1173 K to 1373 K, the decomposition of the complex defect Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} occurs, turning into a deep-level V{sub As}V{sub Ga} cluster defect and an isolated As{sub Ga} antisite defect, and relevant defect of Ga{sub As} is recovered. The properties of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} defect has been studied by first-principles calculations based on hybrid density functional theory. Our calculated results show that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. Thus, we reveal that the temperature has an important effect on the microstructure of deep-level defects and defect energy level in gallium arsenide that EL2 and EL6 deep-level defects have a certain correlation, which means they could transform into each other. Controlling temperature in the growth process of GaAs could change the microstructure of deep-level defects and defect energy levels in gallium arsenide materials, whereby affects the electron transport properties of materials.

Occlusal Disharmony Transiently Impairs Learning and Memory in the Mouse by Increasing Dynorphin A Levels in the Amygdala.

Science.gov (United States)

Yamada, Kentaro; Ono, Yumie; Kubo, Kin-Ya; Yamamoto, Toshiharu; Onozuka, Minoru

2013-05-01

Occlusal disharmony sometimes causes not only stiffness of neck but also psychiatric depression, suggesting that the condition of oral cavity may affect the central nervous system. Dynorphin A is an endogenous opioid peptide that specifically binds the κ-opioid receptor and has a protective role against stress. Dynorphinergic nervous system is intensely distributed in the amygdala and hippocampus that are coping areas with stress. As a model of malocclusion, we placed dental resin on the molars to increase the occlusal vertical dimension (bite-raise). After various survival times, we analyzed the amygdala and hippocampus by immunohistochemistry and immunosorbent assay (ELISA). Furthermore, the effects on learning and memory were assessed by Morris water maze test. In the amygdala, the levels of dynorphin A were increased on the 1st day after increasing the vertical dimension as indicated by immunohistochemical and ELISA assessments. The levels of dynorphin A returned to control levels on the 5th day. In the hippocampus, there were no noticeable changes in dynorphin A levels. The water maze test indicated that increasing the vertical dimension caused longer escape latency times on the 3rd day compared to those of sham-operated group. However, the bite-raised mice treated with a dynorphin antagonist, nor-binaltorphimine, showed similar escape latency times to the times of sham-operated group, even on the 3rd day. These results suggest that occlusal disharmony causes stress resulting in a transient increase of dynorphin A levels at least in the amygdala and that the increased dynorphin A levels transiently impair learning and memory.

Laser Calorimetry Spectroscopy for ppm-level Dissolved Gas Detection and Analysis.

Science.gov (United States)

K S, Nagapriya; Sinha, Shashank; R, Prashanth; Poonacha, Samhitha; Chaudhry, Gunaranjan; Bhattacharya, Anandaroop; Choudhury, Niloy; Mahalik, Saroj; Maity, Sandip

2017-02-20

In this paper we report a newly developed technique - laser calorimetry spectroscopy (LCS), which is a combination of laser absorption spectroscopy and calorimetry - for the detection of gases dissolved in liquids. The technique involves determination of concentration of a dissolved gas by irradiating the liquid with light of a wavelength where the gas absorbs, and measuring the temperature change caused by the absorbance. Conventionally, detection of dissolved gases with sufficient sensitivity and specificity was done by first extracting the gases from the liquid and then analyzing the gases using techniques such as gas chromatography. Using LCS, we have been able to detect ppm levels of dissolved gases without extracting them from the liquid. In this paper, we show the detection of dissolved acetylene in transformer oil in the mid infrared (MIR) wavelength (3021 nm) region.

Variable thickness transient ground-water flow model. Volume 3. Program listings

International Nuclear Information System (INIS)

Reisenauer, A.E.

1979-12-01

The Assessment of Effectiveness of Geologic Isolation Systems (AEGIS) Program is developing and applying the methodology for assessing the far-field, long-term post-closure safety of deep geologic nuclear waste repositories. AEGIS is being performed by Pacific Northwest Laboratory (PNL) under contract with the Office of Nuclear Waste Isolation (OWNI) for the Department of Energy (DOE). One task within AEGIS is the development of methodology for analysis of the consequences (water pathway) from loss of repository containment as defined by various release scenarios. Analysis of the long-term, far-field consequences of release scenarios requires the application of numerical codes which simulate the hydrologic systems, model the transport of released radionuclides through the hydrologic systems to the biosphere, and, where applicable, assess the radiological dose to humans. Hydrologic and transport models are available at several levels of complexity or sophistication. Model selection and use are determined by the quantity and quality of input data. Model development under AEGIS and related programs provides three levels of hydrologic models, two levels of transport models, and one level of dose models (with several separate models). This is the third of 3 volumes of the description of the VTT (Variable Thickness Transient) Groundwater Hydrologic Model - second level (intermediate complexity) two-dimensional saturated groundwater flow

A Deep Learning Approach to LIBS Spectroscopy for Planetary Applications

Science.gov (United States)

Mullen, T. H.; Parente, M.; Gemp, I.; Dyar, M. D.

2017-12-01

The ChemCam instrument on the Curiousity rover has collected >440,000 laser-induced breakdown spectra (LIBS) from 1500 different geological targets since 2012. The team is using a pipeline of preprocessing and partial least squares techniques to predict compositions of surface materials [1]. Unfortunately, such multivariate techniques are plagued by hard-to-meet assumptions involving constant hyperparameter tuning to specific elements and the amount of training data available; if the whole distribution of data is not seen, the method will overfit to the training data and generalizability will suffer. The rover only has 10 calibration targets on-board that represent a small subset of the geochemical samples the rover is expected to investigate. Deep neural networks have been used to bypass these issues in other fields. Semi-supervised techniques allow researchers to utilized small labeled datasets and vast amounts of unlabeled data. One example is the variational autoencoder model, a semi-supervised generative model in the form of a deep neural network. The autoencoder assumes that LIBS spectra are generated from a distribution conditioned on the elemental compositions in the sample and some nuisance. The system is broken into two models: one that predicts elemental composition from the spectra and one that generates spectra from compositions that may or may not be seen in the training set. The synthesized spectra show strong agreement with geochemical conventions to express specific compositions. The predictions of composition show improved generalizability to PLS. Deep neural networks have also been used to transfer knowledge from one dataset to another to solve unlabeled data problems. Given that vast amounts of laboratry LIBS spectra have been obtained in the past few years, it is now feasible train a deep net to predict elemental composition from lab spectra. Transfer learning (manifold alignment or calibration transfer) [2] is then used to fine-tune the model

Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

International Nuclear Information System (INIS)

Li, Zheng; Kraner, H.W.; Verbitskaya, E.; Eremin, V.; Ivanov, A.; Rubinelli, F.A.; Fonash, S.J.

1992-02-01

Distributions of the A-center (oxygen-vacancy) in neutron silicon detectors have been studied using Deep Level Transient Spectroscopy. A-centers have been found to be nearly uniformly distributed in the silicon water depth for medium resistivity (0.1 - 0.2 kΩ-cm) silicon detectors. A positive filling pulse was needed to detect the A-centers in high resistivity (>4 kΩ-cm) silicon detectors, and this effect was found to be dependent on the oxidation temperature. A discussion of this effect is presented. 16 refs

Transient vibration phenomena in deep mine hoisting cables. Part 1: Mathematical model

Science.gov (United States)

Kaczmarczyk, S.; Ostachowicz, W.

2003-04-01

The classical moving co-ordinate frame approach and Hamilton's principle are employed to derive a distributed-parameter mathematical model to investigate the dynamic behaviour of deep mine hoisting cables. This model describes the coupled lateral-longitudinal dynamic response of the cables in terms of non-linear partial differential equations that accommodate the non-stationary nature of the system. Subsequently, the Rayleigh-Ritz procedure is applied to formulate a discrete mathematical model. Consequently, a system of non-linear non-stationary coupled second order ordinary differential equations arises to govern the temporal behaviour of the cable system. This discrete model with quadratic and cubic non-linear terms describes the modal interactions between lateral oscillations of the catenary cable and longitudinal oscillations of the vertical rope. It is shown that the response of the catenary-vertical rope system may feature a number of resonance phenomena, including external, parametric and autoparametric resonances. The parameters of a typical deep mine winder are used to identify the depth locations of the resonance regions during the ascending cycles with various winding velocities.

Considerations affecting deep-well disposal of tritium-bearing low-level aqueous waste from nuclear fuel reprocessing plants

International Nuclear Information System (INIS)

Trevorrow, L.E.; Warner, D.L.; Steindler, M.J.

1977-03-01

Present concepts of disposal of low-level aqueous wastes (LLAW) that contain much of the fission-product tritium from light water reactors involve dispersal to the atmosphere or to surface streams at fuel reprocessing plants. These concepts have been challenged in recent years. Deep-well injection of low-level aqueous wastes, an alternative to biospheric dispersal, is the subject of this presentation. Many factors must be considered in assessing its feasibility, including technology, costs, environmental impact, legal and regulatory constraints, and siting. Examination of these factors indicates that the technology of deep-well injection, extensively developed for other industrial wastes, would require little innovation before application to low-level aqueous wastes. Costs would be low, of the order of magnitude of 10 -4 mill/kWh. The environmental impact of normal deep-well disposal would be small, compared with dispersal to the atmosphere or to surface streams; abnormal operation would not be expected to produce catastrophic results. Geologically suitable sites are abundant in the U.S., but a well would best be co-located with the fuel-reprocessing plant where the LLAW is produced. Legal and regulatory constraints now being developed will be the most important determinants of the feasibility of applying the method

Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy

International Nuclear Information System (INIS)

Zhang, Z.; Arehart, A. R.; Hurni, C. A.; Speck, J. S.; Ringel, S. A.

2012-01-01

Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) were utilized to investigate the behavior of deep states in m-plane, n-type GaN grown by ammonia-based molecular beam epitaxy (NH 3 -MBE) as a function of systematically varied V/III growth flux ratios. Levels were detected at E C - 0.14 eV, E C - 0.21 eV, E C - 0.26 eV, E C - 0.62 eV, E C - 0.67 eV, E C - 2.65 eV, and E C - 3.31 eV, with the concentrations of several traps exhibiting systematic dependencies on V/III ratio. The DLTS spectra are dominated by traps at E C - 0.14 eV and E C - 0.67 eV, whose concentrations decreased monotonically with increasing V/III ratio and decreasing oxygen impurity concentration, and by a trap at E C - 0.21 eV that revealed no dependence of its concentration on growth conditions, suggestive of different physical origins. Higher concentrations of deeper trap states detected by DLOS with activation energies of E C - 2.65 eV and E C - 3.31 eV in each sample did not display measureable sensitivity to the intentionally varied V/III ratio, necessitating further study on reducing these deep traps through growth optimization for maximizing material quality of NH 3 -MBE grown m-plane GaN.

Excited-state dynamics of mononucleotides and DNA strands in a deep eutectic solvent.

Science.gov (United States)

Zhang, Yuyuan; de La Harpe, Kimberly; Hariharan, Mahesh; Kohler, Bern

2018-04-17

The photophysics of several mono- and oligonucleotides were investigated in a deep eutectic solvent for the first time. The solvent glyceline, prepared as a 1 : 2 mole ratio mixture of choline chloride and glycerol, was used to study excited-state deactivation in a non-aqueous solvent by the use of steady-state and time-resolved spectroscopy. DNA strands in glyceline retain the secondary structures that are present in aqueous solution to some degree, thus enabling a study of the effects of solvent properties on the excited states of stacked bases and stacked base pairs. The excited-state lifetime of the mononucleotide 5'-AMP in glyceline is 630 fs, or twice as long as in aqueous solution. Even slower relaxation is seen for 5'-TMP in glyceline, and a possible triplet state with a lifetime greater than 3 ns is observed. Circular dichroism spectra show that the single strand (dA)18 and the duplex d(AT)9·d(AT)9 adopt similar structures in glyceline and in aqueous solution. Despite having similar conformations in both solvents, femtosecond transient absorption experiments reveal striking changes in the dynamics. Excited-state decay and vibrational cooling generally take place more slowly in glyceline than in water. Additionally, the fraction of long-lived excited states in both oligonucleotide systems is lower in glyceline than in aqueous solution. For a DNA duplex, water is suggested to favor decay pathways involving intrastrand charge separation, while the deep eutectic solvent favors interstrand deactivation channels involving neutral species. Slower solvation dynamics in the viscous deep eutectic solvent may also play a role. These results demonstrate that the dynamics of excitations in stacked bases and stacked base pairs depend not only on conformation, but are also highly sensitive to the solvent.

Deep Ocean Mineral Supplementation Enhances the Cerebral Hemodynamic Response during Exercise and Decreases Inflammation Postexercise in Men at Two Age Levels

Directory of Open Access Journals (Sweden)

Ching-Yin Wei

2017-12-01

Full Text Available Background: Previous studies have consistently shown that oral supplementation of deep ocean minerals (DOM improves vascular function in animals and enhances muscle power output in exercising humans.Purpose: To examine the effects of DOM supplementation on the cerebral hemodynamic response during physical exertion in young and middle-aged men.Design: Double-blind placebo-controlled crossover studies were conducted in young (N = 12, aged 21.2 ± 0.4 years and middle-aged men (N = 9, aged 46.8 ± 1.4 years. The counter-balanced trials of DOM and Placebo were separated by a 2-week washout period. DOM and Placebo were orally supplemented in drinks before, during, and after cycling exercise. DOM comprises desalinated minerals and trace elements from seawater collected ~618 m below the earth's surface.Methods: Cerebral hemodynamic response (tissue hemoglobin was measured during cycling at 75% VO2max using near infrared spectroscopy (NIRS.Results: Cycling time to exhaustion at 75% VO2max and the associated plasma lactate response were similar between the Placebo and DOM trials for both age groups. In contrast, DOM significantly elevated cerebral hemoglobin levels in young men and, to a greater extent, in middle-aged men compared with Placebo. An increased neutrophil to lymphocyte ratio (NLR was observed in middle-aged men, 2 h after exhaustive cycling, but was attenuated by DOM.Conclusion: Our data suggest that minerals and trace elements from deep oceans possess great promise in developing supplements to increase the cerebral hemodynamic response against a physical challenge and during post-exercise recovery for middle-aged men.

Distinguishing between deep trapping transients of electrons and holes in TiO2 nanotube arrays using planar microwave resonator sensor.

Science.gov (United States)

Zarifi, Mohammad H; Wiltshire, Benjamin Daniel; Mahdi, Najia; Shankar, Karthik; Daneshmand, Mojgan

2018-05-16

A large signal DC bias and a small signal microwave bias were simultaneously applied to TiO2 nanotube membranes mounted on a planar microwave resonator. The DC bias modulated the electron concentration in the TiO2 nanotubes, and was varied between 0 and 120 V in this study. Transients immediately following the application and removal of DC bias were measured by monitoring the S-parameters of the resonator as a function of time. The DC bias stimulated Poole-Frenkel type trap-mediated electrical injection of excess carriers into TiO2 nanotubes which resulted in a near constant resonant frequency but a pronounced decrease in the microwave amplitude due to free electron absorption. When ultraviolet illumination and DC bias were both present and then step-wise removed, the resonant frequency shifted due to trapping -mediated change in the dielectric constant of the nanotube membranes. Characteristic lifetimes of 60-80 s, 300-800 s and ~3000 s were present regardless of whether light or bias was applied and are also observed in the presence of a hole scavenger, which we attribute to oxygen adsorption and deep electron traps while another characteristic lifetime > 9000 s was only present when illumination was applied, and is attributed to the presence of hole traps.

Effective image differencing with convolutional neural networks for real-time transient hunting

Science.gov (United States)

Sedaghat, Nima; Mahabal, Ashish

2018-06-01

Large sky surveys are increasingly relying on image subtraction pipelines for real-time (and archival) transient detection. In this process one has to contend with varying point-spread function (PSF) and small brightness variations in many sources, as well as artefacts resulting from saturated stars and, in general, matching errors. Very often the differencing is done with a reference image that is deeper than individual images and the attendant difference in noise characteristics can also lead to artefacts. We present here a deep-learning approach to transient detection that encapsulates all the steps of a traditional image-subtraction pipeline - image registration, background subtraction, noise removal, PSF matching and subtraction - in a single real-time convolutional network. Once trained, the method works lightening-fast and, given that it performs multiple steps in one go, the time saved and false positives eliminated for multi-CCD surveys like Zwicky Transient Facility and Large Synoptic Survey Telescope will be immense, as millions of subtractions will be needed per night.

Direct characterization of the energy level alignments and molecular components in an organic hetero-junction by integrated photoemission spectroscopy and reflection electron energy loss spectroscopy analysis.

Science.gov (United States)

Yun, Dong-Jin; Shin, Weon-Ho; Bulliard, Xavier; Park, Jong Hwan; Kim, Seyun; Chung, Jae Gwan; Kim, Yongsu; Heo, Sung; Kim, Seong Heon

2016-08-26

A novel, direct method for the characterization of the energy level alignments at bulk-heterojunction (BHJ)/electrode interfaces on the basis of electronic spectroscopy measurements is proposed. The home-made in situ photoemission system is used to perform x-ray/ultraviolet photoemission spectroscopy (XPS/UPS), reflection electron energy loss spectroscopy (REELS) and inverse photoemission spectroscopy of organic-semiconductors (OSCs) deposited onto a Au substrate. Through this analysis system, we are able to obtain the electronic structures of a boron subphthalocyanine chloride:fullerene (SubPC:C60) BHJ and those of the separate OSC/electrode structures (SubPC/Au and C60/Au). Morphology and chemical composition analyses confirm that the original SubPC and C60 electronic structures remain unchanged in the electrodes prepared. Using this technique, we ascertain that the position and area of the nearest peak to the Fermi energy (EF = 0 eV) in the UPS (REELS) spectra of SubPC:C60 BHJ provide information on the highest occupied molecular orbital level (optical band gap) and combination ratio of the materials, respectively. Thus, extracting the adjusted spectrum from the corresponding SubPC:C60 BHJ UPS (REELS) spectrum reveals its electronic structure, equivalent to that of the C60 materials. This novel analytical approach allows complete energy-level determination for each combination ratio by separating its electronic structure information from the BHJ spectrum.

Greedy Deep Dictionary Learning

OpenAIRE

Tariyal, Snigdha; Majumdar, Angshul; Singh, Richa; Vatsa, Mayank

2016-01-01

In this work we propose a new deep learning tool called deep dictionary learning. Multi-level dictionaries are learnt in a greedy fashion, one layer at a time. This requires solving a simple (shallow) dictionary learning problem, the solution to this is well known. We apply the proposed technique on some benchmark deep learning datasets. We compare our results with other deep learning tools like stacked autoencoder and deep belief network; and state of the art supervised dictionary learning t...

Influence of transient radiation for the behaviour of the 80C31 single-chip microcontrollers

International Nuclear Information System (INIS)

Zhou Kaiming; Xie Zeyuan; Yang Youli

2006-01-01

Radiation characteristic of transient dose rate and the changed rule of latchup current with the gamma dose rate in 'flash-1' were researched in the 80C31 Single-chip Microcontrollers. The latchup current characteristic of the 80C31 Single-chip Microcontrollers was analyzed in shallow deep latchup. (authors)

Tumor-promoting phorbol ester transiently down-modulates the p53 level and blocks the cell cycle

DEFF Research Database (Denmark)

Skouv, J.; Jensen, P O; Forchhammer, J

1994-01-01

Activation of the protein kinase C signaling pathway by tumor-promoting phorbol esters, such as 4 beta-phorbol 12-myristate 13-acetate (PMA), induced a decrease in the level of p53 mRNA in several serum-starved human cell lines. Also, the tumor-promoting phosphatase inhibitor okadaic acid induced...... a decrease in the p53 mRNA level in the cell lines. Normal diploid as well as various tumor cell lines were tested. Two tumor cell lines, HeLa and A549, both containing the wild-type p53 gene, but very different levels of p53 protein, were studied in detail. In both cell lines, the level of p53 m......RNA was minimal after 9 h of exposure to PMA. After approximately 120 h, the p53 mRNA level was similar to the pretreatment level. PMA induced a similar transient decrease in the level of p53 protein in the A549 cell line. The decrease in the p53 mRNA level could not be explained by changes in the transcriptional...

Transient formation of forbidden lines

International Nuclear Information System (INIS)

Rosmej, F.B.; Rosmej, O.N.

1996-01-01

An explanation of anomalously long time scales in the transient formation of forbidden lines is proposed. The concept is based on a collisionally induced density dependence of the relaxation times of metastable level populations in transient plasma. Generalization leads to an incorporation of diffusion phenomena. We demonstrate this new concept for the simplest atomic system: the He-like isoelectronic sequence. A new interpretation of the observed long duration and anomalously high intensity of spin-forbidden emission in hot plasmas is given. (author)

Transient formation of forbidden lines

Energy Technology Data Exchange (ETDEWEB)

Rosmej, F.B. [Bochum Univ., Ruhr (Germany). Inst. fuer Experimentalphysik V; Rosmej, O.N. [VNIIFTRI, Moscow Region (Russian Federation). MISDC

1996-05-14

An explanation of anomalously long time scales in the transient formation of forbidden lines is proposed. The concept is based on a collisionally induced density dependence of the relaxation times of metastable level populations in transient plasma. Generalization leads to an incorporation of diffusion phenomena. We demonstrate this new concept for the simplest atomic system: the He-like isoelectronic sequence. A new interpretation of the observed long duration and anomalously high intensity of spin-forbidden emission in hot plasmas is given. (author).

Dynamics of the deep-level emission in ZnO nanowires

Energy Technology Data Exchange (ETDEWEB)

Hou, Dongchao; Rueckmann, Ilja; Voss, Tobias [Institut fuer Festkoerperphysik, Universitaet Bremen (Germany)

2010-07-01

Due to its wide direct band gap and large exciton binding energy (60 meV), ZnO nanowires possess an efficient near band-edge emission (NBE) in UV range. Additional energy levels in the band gap of ZnO, commonly introduced by point defects such as oxygen or zinc vacancies and Cu impurities, can largely weaken the UV emission by providing extra recombination routes for the electrons in conduction band. In ZnO nanowires this deep-level emission band (DLE) is expected to be largely activated by tunneling processes of holes trapped in the surface depletion layer after optical excitation. We studied the dependence of the DLE and NBE intensities of ZnO nanowires on the excitation power at different temperatures. For the experiments, the fundamental (1064 nm) and frequency-tripled (355 nm) pulses of an Nd:YAG microchip laser were used. The additional infrared laser radiation was used to directly populate the defect levels with electrons from the valence band. Our results show that the additional infrared photons lead to a reduction of the DLE while the NBE is enhanced. We discuss the implications of our results for the models of DLE in ZnO nanowires.

Studies on the deep-level defects in CdZnTe crystals grown by travelling heater method

Energy Technology Data Exchange (ETDEWEB)

Zhou, Boru; Jie, Wanqi; Wang, Tao; Xu, Lingyan; Yang, Fan; Yin, Liying; Fu, Xu [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi (China); Nan, Ruihua [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, School of Materials and Chemical Engineering, Xi' an Technological University, Xi' an (China)

2017-05-15

The variation of deep level defects along the axis of CZT:In ingots grown by Travelling Heater Method was investigated by the means of thermally stimulated current (TSC) spectra. Models for the reaction among different defects In, Te{sub i}, and V{sub Cd} were used to analyze the variation of deep level defects along the growth direction. It was found that the density of In dopant-related defects is lower in the tip, but those of Te antisites and Te interstitials are higher in the tip. The density of cadmium vacancy exhibits an initial increase followed by a decrease from the tip to tail of the ingot. In PL spectra, the intensities of (D{sub 0}, X), (DAP) and D{sub complex} peaks obviously increase from the tip to the tail, due to the increase of the density of In dopant-related defects (IN{sup +}{sub CD}), Cd vacancies, and impurities. The low concentration of net free holes was found by Hall measurements, and high resistivity with p-type conduction was demonstrated from I-V analysis. The mobility for electrons was found to increase significantly from 634 ± 26 cm{sup 2} V{sup -1} s{sup -1} in the tip to 860 ± 10 cm{sup 2} V{sup -1} s{sup -1} in the tail, due to the decrease of the deep level defect densities. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Archival Investigation of Outburst Sites and Progenitors of Extragalactic Intermediate-Luminosity Mid-IR Transients

Science.gov (United States)

Bond, Howard

2017-08-01

Our team is using Spitzer in a long-term search for extragalactic mid-infrared (MIR) variable stars and transients-the SPIRITS project (SPitzer InfraRed Intensive Transients Survey). In this first exploration of luminous astrophysical transients in the infrared, we have discovered a puzzling new class. We call them SPRITEs: eSPecially Red Intermediate-luminosity Transient Events. They have maximum MIR luminosities between supernovae and classical novae, but are not detected in the optical to deep limits. To date, we have discovered more than 50 SPRITEs in galaxies out to 17 Mpc. In this Archival Research proposal, we request support in order to investigate the pre-eruption sites in HST images of some 3 dozen SPRITEs discovered to date, and an additional 2 dozen that we are likely to find until the end of Spitzer observing in late 2018. Our aims are (1) characterize the pre-outburst environments at HST resolution in the visible and near-IR, to understand the stellar populations, stellar ages and masses, and interstellar medium at the outburst sites; (2) search for progenitors; (3) help prepare the way for a better understanding of the nature of extragalactic IR transients that will be investigated by JWST.

Transient risk factors of acute occupational injuries

DEFF Research Database (Denmark)

Østerlund, Anna H; Lander, Flemming; Nielsen, Kent

2017-01-01

Objectives The objectives of this study were to (i) identify transient risk factors of occupational injuries and (ii) determine if the risk varies with age, injury severity, job task, and industry risk level. Method A case-crossover design was used to examine the effect of seven specific transient...... risk factors (time pressure, disagreement with someone, feeling sick, being distracted by someone, non-routine task, altered surroundings, and broken machinery and materials) for occupational injuries. In the study, 1693 patients with occupational injuries were recruited from a total of 4002...... in relation to sex, age, job task, industry risk level, or injury severity. Conclusion Use of a case-crossover design identified several worker-related transient risk factors (time pressure, feeling sick, being distracted by someone) that led to significantly increased risks for occupational injuries...

The application of the csamt method in the tectonic transformation of the deep-level fore exploration in the shandongkeng area in Nanxiong basin

International Nuclear Information System (INIS)

Xu Zhan

2010-01-01

With the national policy efforts on the strengthening of mining exploration, uranium exploration has also ushered in its second s pring . The topic of the new round exploration is P rospect the deeply minerals . Therefore, the changes of the deep structure of the mining area are the premise to carry out survey work. This article states briefly the working principle and characteristics of CSAMT method. The Application of the CSAMT Method in the Tectonic Transformation of The Deep-Level Exploration in the Shangdongkeng area in Nanxiong basin expresses that the method has a good application and effectiveness in research of deep geological objectives. It provides design basis for the mining exploration of deep-level area. (authors)

Relaxation process of coherent transients in the presence of an adjacent strongly driven transition

International Nuclear Information System (INIS)

Feng Xiaomin; Yang Lijun; Li Xiaoli; Zhang Lianshui; Han Li; Guo Qinglin; Fu Guangsheng

2007-01-01

Coherent transient occurs when a two-level transition is subjected to pulsed laser excitation. The relaxation process of coherent transient depends on both the longitudinal and transverse relaxation parameters of the two-level transition, which is related to the population and coherence decay rates. In this paper we study relaxation process of a new type coherent transients observed by applying a pulsed laser excitation to a two-level transition in the presence of a second strong continuous-wave (cw) coherent field coupling one of the two levels to a third level, that is, in a three-level double-resonance configuration. The relaxation process of coherent transients is studied as a function of relaxation parameters of both the two-level transition excited by the pulsed laser field and the transition coupled by the cw laser field. It is shown that by involving a third level with coherent field the relaxation process of coherent transients of a two-level transition can be modified. Our study illustrates a new way of controlling relaxation process of coherent transients in a two-level transition by a second coherent laser and this has important implication for quantum information storage and quantum computing

DeepMirTar: a deep-learning approach for predicting human miRNA targets.

Science.gov (United States)

Wen, Ming; Cong, Peisheng; Zhang, Zhimin; Lu, Hongmei; Li, Tonghua

2018-06-01

MicroRNAs (miRNAs) are small noncoding RNAs that function in RNA silencing and post-transcriptional regulation of gene expression by targeting messenger RNAs (mRNAs). Because the underlying mechanisms associated with miRNA binding to mRNA are not fully understood, a major challenge of miRNA studies involves the identification of miRNA-target sites on mRNA. In silico prediction of miRNA-target sites can expedite costly and time-consuming experimental work by providing the most promising miRNA-target-site candidates. In this study, we reported the design and implementation of DeepMirTar, a deep-learning-based approach for accurately predicting human miRNA targets at the site level. The predicted miRNA-target sites are those having canonical or non-canonical seed, and features, including high-level expert-designed, low-level expert-designed, and raw-data-level, were used to represent the miRNA-target site. Comparison with other state-of-the-art machine-learning methods and existing miRNA-target-prediction tools indicated that DeepMirTar improved overall predictive performance. DeepMirTar is freely available at https://github.com/Bjoux2/DeepMirTar_SdA. lith@tongji.edu.cn, hongmeilu@csu.edu.cn. Supplementary data are available at Bioinformatics online.

Transient surface states during the CBE growth of GaAs

Science.gov (United States)

Farrell, T.; Hill, D.; Joyce, T. B.; Bullough, T. J.; Weightman, P.

1997-05-01

We report the occurrence of a transient surface state during the initial stages of CBE GaAs(0 0 1) growth. The state was detected in real-time reflectance ( R) and reflectance anisotropy spectroscopy (RAS) growth monitoring. At low growth rates, less than 1 μm/h, beam equivalent pressure (BEP) of triethylgallium (TEG) BEPs there was a rapid increase in R at all monitoring wavelengths, followed by a monotonic decay to its pre-growth value. This transient increase in R was accompanied by a change in the RAS signal, the magnitude and sign of which varied with wavelength. The initial increase in R is shown to be associated with the development of a metallic-like surface whereas the changes in the RAS signal are consistent with the formation of Ga dimers.

Spectroscopy, Kinetics, and Dynamics of Combustion Radicals

Energy Technology Data Exchange (ETDEWEB)

Nesbitt, David J. [Research/Professor

2013-08-06

Spectroscopy, kinetics and dynamics of jet cooled hydrocarbon transients relevant to the DOE combustion mission have been explored, exploiting i) high resolution IR lasers, ii) slit discharge sources for formation of jet cooled radicals, and iii) high sensitivity detection with direct laser absorption methods and near the quantum shot noise limit. What makes this combination powerful is that such transients can be made under high concentrations and pressures characteristic of actual combustion conditions, and yet with the resulting species rapidly cooled (T ≈10-15K) in the slit supersonic expansion. Combined with the power of IR laser absorption methods, this provides novel access to spectral detection and study of many critical combustion species.

BWR [boiling water reactor] core criticality versus water level during an ATWS [anticipated transient without scram] event

International Nuclear Information System (INIS)

Sehgal, B.R.; Peng, C.M.; Maly, J.

1988-01-01

The BWR [boiling water reactor] emergency procedures guidelines recommend management of core water level to reduce the power generated during an anticipated transient without scram (ATWS) event. BWR power level variation has traditionally been calculated in the system codes using a 1-D [one-dimensional] 2-group neutron kinetics model to determine criticality. This methodology used also for calculating criticality of the partially covered BWR cores has, however, never been validated against data. In this paper, the power level versus water level issues in an ATWS severe accident are introduced and the accuracy of the traditional methodology is investigated by comparing with measured data. It is found that the 1-D 2-group treatment is not adequate for accurate predictions of criticality and therefore the system power level for the water level variations that may be encountered in a prototypical ATWS severe accident. It is believed that the current predictions for power level may be too high

Assessing the Level of Disability, Deep Cervical Flexor Endurance and Fear Avoidance Beliefs in Bankers with Neck Pain

Directory of Open Access Journals (Sweden)

Deptee Warikoo

2013-08-01

Full Text Available Objective: To assess the level of disability, the deep cervical flexor endurance and fear avoidance beliefs (FAB in bankers with neck pain and to find a correlation between disability and deep cervical muscle endurance, FAB and disability, FAB and deep flexor muscle endurance. Methods: It ws an observational study. The Subjects who had neck pain and minimum 5 years’ experience as a Banker participated in the study. Total 100 subjects were selected. All the subjects were assessed for their disability by the neck pain and disability score (NPDI, their deep cervical flexor endurance using Pressure Biofeedback using Cranio-Cervical flexion test (CCFT and Fear Avoidance Belief by using questionnaire( FABQ. Results: It was found that bankers have a moderate level of disability. The results showed an elevated fear avoidance belief with a mean value of FABQ-PA 21.61±4.42 and FABQ-W 37.81± 5.69. The results indicated that a negative correlation was found between NPDI and CCFT (r=0.855. A positive correlation was found between NPDI and FABQ-PA(r=0.337, FABQ-W(r=0.500. In the present study a negative correlation was found between CCFT and FABQ-W(r=0.553, FABQ-PA (0.348 and positive correlation (r=0.540 was found between FABQ-PA and FABQ-W. Conclusion: The present study concluded that there was a significant level of disability and significantly decreased endurance level and increased fear avoidance beliefs (both work and physical activity related among bankers with neck pain. In addition to that there was a significant correlation found between NPDI and CCFT, NPDI and FABQ, CCFT and FABQ, FABQ-W and FABQ-PA.

Mobility-lifetime product in epitaxial GaAs X-ray detectors

Energy Technology Data Exchange (ETDEWEB)

Sun, G.C. [GESEC R and D, Universite Pierre et Marie Curie, Bat.11, 140 rue de Lourmel, 75015 Paris (France)]. E-mail: guocsun@ccr.jussieu.fr; Zazoui, M. [LPMC, Faculte des Sciences et Techniques-Mohammedia, B.P. 146 Bd Hassan II, Mohammedia, Maroc (Morocco); Talbi, N. [Faculte des Sciences, Universite de Gabes, Route de Medenine, 6029 Gabes (Tunisia); Khirouni, K. [Faculte des Sciences, Universite de Gabes, Route de Medenine, 6029 Gabes (Tunisia); Bourgoin, J.C. [GESEC R and D, Universite Pierre et Marie Curie, Bat.11, 140 rue de Lourmel, 75015 Paris (France)

2007-04-01

Self-supported thick (200-500 {mu}m), non-intentionally doped, epitaxial GaAs layers are good candidates for X-ray imaging for the following reasons. Their electronic properties are homogeneous over large areas, they can be grown at low cost, the technology to realize pixel detectors of various size is standard, the defect concentration is low and the fluorescence yield is small. Here, we characterize the defects present in the material and evaluate the mobility-lifetime product, using Deep Level Transient Spectroscopy combined with current-voltage and charge collection measurements.

Entropy-driven metastable defects in silicon

International Nuclear Information System (INIS)

Hamilton, B.; Peaker, A.R.; Pantelides, S.T.

1989-01-01

The known metastable defects are usually describable by a configuration coordinate diagram in which two energy minima are separated by a barrier. This diagram does not change with temperature and each configuration is stable over some temperature range. Here we report the observation of a novel metastability: A configuration change occurs spontaneously and abruptly at a critical temperature, giving rise to a discontinuous DLTS (deep level transient spectroscopy) spectrum. We propose that this phenomenon is a manifestation of entropy variations in the configurational space. (author) 12 refs., 4 figs

Nature of oxygen donors and radiation defects in oxygen-doped germanium

International Nuclear Information System (INIS)

Fukuoka, Noboru; Atobe, Kozo; Honda, Makoto; Matsuda, Koji.

1991-01-01

The nature of oxygen donors and radiation defects in oxygen-doped germanium were studied through measurements of the infrared absorption spectrum, deep level transient spectroscopy spectrum and carrier concentration. It is revealed that a new donor is not formed in oxygen-doped germanium. An A-center (interstitial oxygen-vacancy pair) forms a complex with a thermal donor in its annealing stage at 60degC-140degC. The introduction rate of defects by 1.5 MeV electron irradiation was enhanced in thermal-donor-doped samples. (author)

Macroscopic results for a novel oxygenated silicon material

CERN Document Server

Watts, S J; Karpenko, A

2002-01-01

High-resistivity FZ silicon diodes have been processed in order to increase their oxygen dimer (O sub 2 sub i) concentration. Deep level transient spectroscopy measurements have been performed after proton irradiation showing that the formation of the VO centre is suppressed. The substrates had a starting resistivity of 2-4 k OMEGA cm, with an oxygen concentration of 10 sup 1 sup 5 and 10 sup 1 sup 7 cm sup - sup 3. Results for doping changes, leakage current and annealing behaviour after irradiation with 24 GeV/c protons are shown.

Annual review of materials science. Volume 7

International Nuclear Information System (INIS)

Huggins, R.A.; Bube, R.H.; Roberts, R.W.

1977-01-01

A review is presented of recent materials science research. Topics covered include: point defects and their interaction; defect chemistry in crystalline solids; deep level impurities in semiconductors; structural aspects of one-dimensional conductors; structural transformations during aging of metal alloys; high rate thick film growth; metal forming, the application of limit analysis; kinetics and mechanisms of gas-metal interactions; erosion; reversible temper embrittlement; acoustic emission in brittle materials; capacitance transient spectroscopy; hot corrosion of high-temperature alloys; fundamental optical phenomena in infrared window materials; dental amalgam; and transparent conducting coatings

The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

Science.gov (United States)

Weinberg, I.; Brandhorst, H. W., Jr.; Mehta, S.; Swartz, C. K.

1984-01-01

Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Characterization of plasma etching damage on p-type GaN using Schottky diodes

International Nuclear Information System (INIS)

Kato, M.; Mikamo, K.; Ichimura, M.; Kanechika, M.; Ishiguro, O.; Kachi, T.

2008-01-01

The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was observed. On the other hand, by capacitance DLTS measurements for n-type GaN, we observed an increase in concentration of a donor-type defect with an activation energy of 0.25 eV after the ICP etching. The origin of this defect would be due to nitrogen vacancies. We also observed this defect by photocapacitance measurements for ICP-etched p-type GaN. For both n- and p-type GaN, we found that the low bias power ICP etching is effective to reduce the concentration of this defect introduced by the high bias power ICP etching

Transient hardened power FETs

International Nuclear Information System (INIS)

Dawes, W.R. Jr.; Fischer, T.A.; Huang, C.C.C.; Meyer, W.J.; Smith, C.S.; Blanchard, R.A.; Fortier, T.J.

1986-01-01

N-channel power FETs offer significant advantages in power conditioning circuits. Similiarily to all MOS technologies, power FET devices are vulnerable to ionizing radiation, and are particularily susceptible to burn-out in high dose rate irradiations (>1E10 rads(Si)/sec.), which precludes their use in many military environments. This paper will summarize the physical mechanisms responsible for burn-out, and discuss various fabrication techniques designed to improve the transient hardness of power FETs. Power FET devices were fabricated with several of these techniques, and data will be presented which demonstrates that transient hardness levels in excess of 1E12 rads(Si)/sec. are easily achievable

SPIRITS: SPitzer InfraRed Intensive Transients Survey

Science.gov (United States)

Kasliwal, Mansi; Jencson, Jacob; Lau, Ryan; Masci, Frank; Helou, George; Williams, Robert; Bally, John; Bond, Howard; Whitelock, Patricia; Cody, Ann Marie; Gehrz, Robert; Tinyanont, Samaporn; Smith, Nathan; Surace, Jason; Armus, Lee; Cantiello, Matteo; Langer, Norbert; Levesque, Emily; Mohamed, Shazrene; Ofek, Eran; Parthasarathy, Mudumba; van Dyk, Schuyler; Boyer, Martha; Phillips, Mark; Hsiao, Eric; Morrell, Nidia; Perley, Dan; Gonzalez, Consuelo; Contreras, Carlos; Jones, Olivia; Ressler, Michael; Adams, Scott; Moore, Anna; Cook, David; Fox, Ori; Johansson, Joel; Khan, Rubab; Monson, Andrew; Hankins, Matthew; Goldman, Steven; Jacob, Jencson

2018-05-01

Spitzer is pioneering a systematic exploration of the dynamic infrared sky. Our SPitzer InfraRed Intensive Transients Survey (SPIRITS) has already discovered 78 explosive transients and 2457 eruptive variables. Of these 78 infrared transients, 60 are so red that they are devoid of optical counterparts and we call them SPRITEs (eSPecially Red Intermediate-luminosity Transient Events). The nature of SPRITEs is unknown and progress on deciphering the explosion physics depends on mid-IR spectroscopy. Multiple physical origins have been proposed including stellar merger, birth of a massive binary, electron capture supernova and stellar black hole formation. Hence, we propose a modest continuation of SPIRITS, focusing on discovering and monitoring SPRITEs, in preparation for follow-up with the James Webb Space Telescope (JWST). As the SPRITEs evolve and cool, the bulk of the emission shifts to longer wavelengths. MIRI aboard JWST will be the only available platform in the near future capable of characterizing SPRITEs out to 28 um. Specifically, the low resolution spectrometer would determine dust mass, grain chemistry, ice abundance and energetics to disentangle the proposed origins. The re-focused SPIRITS program consists of continued Spitzer monitoring of those 106 luminous galaxies that are known SPRITE hosts or are most likely to host new SPRITEs. Scaling from the SPIRITS discovery rate, we estimate finding 10 new SPRITEs and 2-3 new supernovae in Cycle 14. The SPIRITS team remains committed to extensive ground-based follow-up. The Spitzer observations proposed here are essential for determining the final fates of active SPRITEs as well as bridging the time lag between the current SPIRITS survey and JWST launch.

Time-dependent electric field in Al/CdTe/Pt detectors

Energy Technology Data Exchange (ETDEWEB)

Turturici, A.A. [Dipartimento di Fisica e Chimica,Università di Palermo,Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Abbene, L., E-mail: leonardo.abbene@unipa.it [Dipartimento di Fisica e Chimica,Università di Palermo,Viale delle Scienze, Edificio 18, Palermo 90128 (Italy); Franc, J.; Grill, R.; Dědič, V. [Institute of Physics of Charles University, MFF, Ke Karlovu 5, Prague 2 (Czech Republic); Principato, F. [Dipartimento di Fisica e Chimica,Università di Palermo,Viale delle Scienze, Edificio 18, Palermo 90128 (Italy)

2015-09-21

Al/CdTe/Pt detectors are very attractive devices for high-resolution X-ray spectroscopy, even though they suffer from bias-induced time instability (polarization). Polarization phenomena cause a progressive time-degradation of the spectroscopic performance of the detectors, due to hole trapping and detrapping from deep acceptor levels that directly control the electric field distribution. In this work we present experimental investigations on the electric field profile of planar Al/CdTe/Pt detectors by means of Pockels effect measurements. The time/temperature dependence of the electric field was investigated in a long time window (up to 10 h) and the correlation with the reverse current transients was also studied. Two energy levels (0.62 eV and 1.16 eV) of the deep hole traps were measured, in agreement with our previous results obtained through electrical and spectroscopic approaches.