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Sample records for deep level transient spectroscopy

  1. Admittance spectroscopy or deep level transient spectroscopy: A contrasting juxtaposition

    Science.gov (United States)

    Bollmann, Joachim; Venter, Andre

    2018-04-01

    A comprehensive understanding of defects in semiconductors remains of primary importance. In this paper the effectiveness of two of the most commonly used semiconductor defect spectroscopy techniques, viz. deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS) are reviewed. The analysis of defects present in commercially available SiC diodes shows that admittance spectroscopy allows the identification of deep traps with reduced measurement effort compared to deep Level Transient Spectroscopy (DLTS). Besides the N-donor, well-studied intrinsic defects were detected in these diodes. Determination of their activation energy and defect density, using the two techniques, confirm that the sensitivity of AS is comparable to that of DLTS while, due to its well defined peak shape, the spectroscopic resolution is superior. Additionally, admittance spectroscopy can analyze faster emission processes which make the study of shallow defects more practical and even that of shallow dopant levels, possible. A comparative summary for the relevant spectroscopic features of the two capacitance methods are presented.

  2. Scanning ion deep level transient spectroscopy: I. Theory

    International Nuclear Information System (INIS)

    Laird, J S; Jagadish, C; Jamieson, D N; Legge, G J F

    2006-01-01

    Theoretical aspects of a new technique for the MeV ion microbeam are described in detail for the first time. The basis of the technique, termed scanning ion deep level transient spectroscopy (SIDLTS), is the imaging of defect distributions within semiconductor devices. The principles of SIDLTS are similar to those behind other deep level transient spectroscopy (DLTS) techniques with the main difference stemming from the injection of carriers into traps using the localized energy-loss of a focused MeV ion beam. Energy-loss of an MeV ion generates an electron-hole pair plasma, providing the equivalent of a DLTS trap filling pulse with a duration which depends on space-charge screening of the applied electric field and ambipolar erosion of the plasma for short ranging ions. Some nanoseconds later, the detrapping current transient is monitored as a charge transient. Scanning the beam in conjunction with transient analysis allows the imaging of defect levels. As with DLTS, the temperature dependence of the transient can be used to extract trap activation levels. In this, the first of a two-part paper, we introduce the various stages of corner capture and derive a simple expression for the observed charge transient. The second paper will illustrate the technique on a MeV ion implanted Au-Si Schottky junction

  3. Point defects in gallium arsenide characterized by positron annihilation spectroscopy and deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Mih, R.; Gronsky, R.; Sterne, P.A.

    1995-01-01

    Positron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. The authors present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot-Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data

  4. PC operated acoustic transient spectroscopy of deep levels in MIS structures

    International Nuclear Information System (INIS)

    Bury, P.; Jamnicky, I.

    1996-01-01

    A new version of acoustic deep-level transient spectroscopy is presented to study the traps at the insulator-semiconductor interface. The acoustic deep-level transient spectroscopy uses an acoustoelectric response signal produced by the MIS structure interface when a longitudinal acoustic wave propagates through a structure. The acoustoelectric response signal is extremely sensitive to external conditions of the structure and reflects any changes in the charge distribution, connected also with charged traps. In comparison with previous version of acoustic deep-level transient spectroscopy that closely coincides with the principle of the original deep-level transient spectroscopy technique, the present technique is based on the computer-evaluated isothermal transients and represents an improved, more efficient and time saving technique. Many tests on the software used for calculation as well as on experimental setup have been performed. The improved acoustic deep-level transient spectroscopy method has been applied for the Si(p) MIS structures. The deep-level parameters as activation energy and capture cross-section have been determined. (authors)

  5. Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

    NARCIS (Netherlands)

    Chasin, A.; Simoen, E.; Bhoolokam, A.; Nag, M.; Genoe, J.; Gielen, G.; Heremans, P.

    2014-01-01

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier

  6. Positron deep-level transient spectroscopy in semi-insulating-GaAs using the positron velocity transient method

    International Nuclear Information System (INIS)

    Tsia, M.; Fung, S.; Beling, C.D.

    2001-01-01

    Recently a new semiconductor defect spectroscopy, namely positron deep level transient spectroscopy (PDLTS) has been proposed that combines the energy selectivity of deep level transient spectroscopy with the structural sensitivity of positron annihilation spectroscopy. This paper focuses on one variant of PDLTS, namely positron velocity PDLTS, which has no sensitivity towards vacancy defects but nevertheless is useful in studying deep levels in semi-insulators. In the present study the electric field within the depletion region of semi-insulating GaAs is monitored through the measurement of the small Doppler shift in the annihilation radiation that comes from this region as a result of positron drift. The drift is the result of an increasing electric field produced by space charge building up from ionizing deep level defects. Doppler shift transients are measured between 50-300 K. The EL2 level emission transients are clearly seen at temperatures around 300 K that yield E C -0.78±0.08eV for the energy of EL2. The EL2 electron capture rate is found to have an activation energy of 0.61±0.08eV which most probably arises from freeze out of conduction electrons. We find the surprising result that emission and capture transients can be seen at temperatures below 200 K. Possible reasons for these transients are discussed. (orig.)

  7. Positron deep level transient spectroscopy — a new application of positron annihilation to semiconductor physics

    Science.gov (United States)

    Beling, C. D.; Fung, S.; Au, H. L.; Ling, C. C.; Reddy, C. V.; Deng, A. H.; Panda, B. K.

    1997-05-01

    Recent positron mobility and lifetime measurements made on ac-biased metal on semi-insulating GaAs junctions, which have identified the native EL2 defect through a determination of the characteristic ionization energy of the donor level, are reviewed. It is shown that these measurements point towards a new spectroscopy, tentatively named positron-DLTS (deep level transient spectroscopy), that is the direct complement to conventional DLTS in that it monitors transients in the electric field of the depletion region rather than the inversely related depletion width, as deep levels undergo ionization. In this new spectroscopy, which may be applied to doped material by use of a suitable positron beam, electric field transients are monitored through the Doppler shift of the annihilation radiation resulting from the drift velocity of the positron in the depletion region. Two useful extensions of the new spectroscopy beyond conventional capacitance-DLTS are suggested. The first is that in some instances information on the microstructure of the defect causing the deep level may be inferred from the sensitivity of the positron to vacancy defects of negative and neutral charge states. The second is that the positron annihilation technique is intrinsically much faster than conventional DLTS with the capability of observing transients some 10 6 times faster, thus allowing deep levels (and even shallow levels) to be investigated without problems associated with carrier freeze-out.

  8. Scanning deep level transient spectroscopy using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Laird, J S; Bardos, R A; Saint, A; Moloney, G M; Legge, G F.J. [Melbourne Univ., Parkville, VIC (Australia)

    1994-12-31

    Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.

  9. Deep-level transient spectroscopy of low-energy ion-irradiated silicon

    DEFF Research Database (Denmark)

    Kolkovsky, Vladimir; Privitera, V.; Nylandsted Larsen, Arne

    2009-01-01

     During electron-gun deposition of metal layers on semiconductors, the semiconductor is bombarded with low-energy metal ions creating defects in the outermost surface layer. For many years, it has been a puzzle why deep-level transient spectroscopy spectra of the as-deposited, electron-gun evapor...

  10. Scanning deep level transient spectroscopy using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Laird, J.S.; Bardos, R.A.; Saint, A.; Moloney, G.M.; Legge, G.F.J. [Melbourne Univ., Parkville, VIC (Australia)

    1993-12-31

    Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.

  11. Deep-level transient spectroscopy of TiO2/CuInS2 heterojunctions

    NARCIS (Netherlands)

    Nanu, M.; Boulch, F.; Schoonman, J.; Goossens, A.

    2005-01-01

    Deep-level transient spectroscopy (DLTS) has been used to measure the concentration and energy position of deep electronic states in CuInS2. Flat TiO2?CuInS2 heterojunctions as well as TiO2-CuInS2 nanocomposites have been investigated. Subband-gap electronic states in CuInS2 films are mostly due to

  12. Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Duc, Tran Thien [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi (Viet Nam); Pozina, Galia; Son, Nguyen Tien; Kordina, Olof; Janzén, Erik; Hemmingsson, Carl [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); Ohshima, Takeshi [Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292 (Japan)

    2016-03-07

    Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level transient spectroscopy and minority carrier transient spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (E{sub V} + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 10{sup 14 }cm{sup −2}, a second hole trap labelled H2 is observed. Simultaneously, the concentration of two electron traps, labelled T1 (E{sub C} – 0.12 eV) and T2 (E{sub C} – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10{sup −3 }cm{sup −1} and 0.9 cm{sup −1}, respectively. Due to the low introduction rate of T1, it is suggested that the defect is associated with a complex. The high introduction rate of trap H1 and T2 suggests that the defects are associated with primary intrinsic defects or complexes. Some deep levels previously observed in irradiated GaN layers with higher threading dislocation densities are not detected in present investigation. It is therefore suggested that the absent traps may be related to primary defects segregated around dislocations.

  13. Setup for in situ deep level transient spectroscopy of semiconductors during swift heavy ion irradiation.

    Science.gov (United States)

    Kumar, Sandeep; Kumar, Sugam; Katharria, Y S; Safvan, C P; Kanjilal, D

    2008-05-01

    A computerized system for in situ deep level characterization during irradiation in semiconductors has been set up and tested in the beam line for materials science studies of the 15 MV Pelletron accelerator at the Inter-University Accelerator Centre, New Delhi. This is a new facility for in situ irradiation-induced deep level studies, available in the beam line of an accelerator laboratory. It is based on the well-known deep level transient spectroscopy (DLTS) technique. High versatility for data manipulation is achieved through multifunction data acquisition card and LABVIEW. In situ DLTS studies of deep levels produced by impact of 100 MeV Si ions on Aun-Si(100) Schottky barrier diode are presented to illustrate performance of the automated DLTS facility in the beam line.

  14. Distinguishing bulk traps and interface states in deep-level transient spectroscopy

    International Nuclear Information System (INIS)

    Coelho, A V P; Adam, M C; Boudinov, H

    2011-01-01

    A new method for the distinction of discrete bulk deep levels and interface states related peaks in deep-level transient spectroscopy spectra is proposed. The measurement of two spectra using different reverse voltages while keeping pulse voltage fixed causes different peak maximum shifts in each case: for a reverse voltage modulus increase, a bulk deep-level related peak maximum will remain unchanged or shift towards lower temperatures while only interface states related peak maximum will be able to shift towards higher temperatures. This method has the advantage of being non-destructive and also works in the case of bulk traps with strong emission rate dependence on the electric field. Silicon MOS capacitors and proton implanted GaAs Schottky diodes were employed to experimentally test the method.

  15. Scanning ion deep level transient spectroscopy: II. Ion irradiated Au-Si Schottky junctions

    International Nuclear Information System (INIS)

    Laird, J S; Jagadish, C; Jamieson, D N; Legge, G J F

    2006-01-01

    Here we introduce a new technique called scanning ion deep level transient spectroscopy (SIDLTS) for the spatial analysis of electrically active defects in devices. In the first part of this paper, a simple theory behind SIDLTS was introduced and factors determining its sensitivity and resolution were discussed. In this paper, we demonstrate the technique on MeV boron implantation induced defects in an Au-Si Schottky junction. SIDLTS measurements are compared with capacitance DLTS measurements over the temperature range, 100-300 K. SIDLTS analyses indicate the presence of two levels, one of which was positively identified as the E c - 0.23 eV divacancy level. The high sensitivity of SIDLTS is verified and the advantages and limitations of the technique are discussed in light of non-exponential components in the charge transient response. Reasons for several undetected levels are also discussed

  16. Luminescence and deep-level transient spectroscopy of grown dislocation-rich Si layers

    Directory of Open Access Journals (Sweden)

    I. I. Kurkina

    2012-09-01

    Full Text Available The charge deep-level transient spectroscopy (Q-DLTS is applied to the study of the dislocation-rich Si layers grown on a surface composed of dense arrays of Ge islands prepared on the oxidized Si surface. This provides revealing three deep-level bands located at EV + 0.31 eV, EC – 0.35 eV and EC – 0.43 eV using the stripe-shaped p-i-n diodes fabricated on the basis of these layers. The most interesting observation is the local state recharging process which proceeds with low activation energy (∼50 meV or without activation. The recharging may occur by carrier tunneling within deep-level bands owing to the high dislocation density ∼ 1011 - 1012 cm-2. This result is in favor of the suggestion on the presence of carrier transport between the deep states, which was previously derived from the excitation dependence of photoluminescence (PL intensity. Electroluminescence (EL spectra measured from the stripe edge of the same diodes contain two peaks centered near 1.32 and 1.55 μm. Comparison with PL spectra indicates that the EL peaks are generated from arsenic-contaminated and pure areas of the layers, respectively.

  17. A study of ion implanted gallium arsenide using deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Emerson, N.G.

    1981-03-01

    This thesis is concerned with the study of deep energy levels in ion implanted gallium arsenide (GaAs) using deep level transient spectroscopy (D.L.T.S.). The D.L.T.S. technique is used to characterise deep levels in terms of their activation energies and capture cross-sections and to determine their concentration profiles. The main objective is to characterise the effects on deep levels, of ion implantation and the related annealing processes. In the majority of cases assessment is carried out using Schottky barrier diodes. Low doses of selenium ions 1 to 3 x 10 12 cm -2 are implanted into vapour phase epitaxial (V.P.E.) GaAs and the effects of post-implantation thermal and pulsed laser annealing are compared. The process of oxygen implantation with doses in the range 1 x 10 12 to 5 x 10 13 cm -2 followed by thermal annealing at about 750 deg C, introduces a deep level at 0.79 eV from the conduction band. Oxygen implantation, at doses of 5 x 10 13 cm -2 , into V.P.E. GaAs produces a significant increase in the concentration of the A-centre (0.83 eV). High doses of zinc (10 15 cm -2 ) are implanted into n-type V.P.E. GaAs to form shallow p-type layers. The D.L.T.S. system described in the text is used to measure levels in the range 0.16 to 1.1 eV (for GaAs) with a sensitivity of the order 1:10 3 . (U.K.)

  18. Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

    Science.gov (United States)

    Yoon, Yohan; Yan, Yixin; Ostrom, Nels P.; Kim, Jinwoo; Rozgonyi, George

    2012-11-01

    Continuous-Czochralski (c-Cz) crystal growth has been suggested as a viable technique for the fabrication of photovoltaic Si wafers due to its low resistivity variation of any dopant, independent of segregation, compared to conventional Cz. In order to eliminate light induced degradation due to boron-oxygen traps in conventional p-type silicon wafers, gallium doped wafers have been grown by c-Cz method and investigated using four point probe, deep level transient spectroscopy (DLTS), and microwave-photoconductance decay. Iron-gallium related electrically active defects were identified using DLTS as the main lifetime killers responsible for reduced non-uniform lifetimes in radial and axial positions of the c-Cz silicon ingot. A direct correlation between minority carrier lifetime and the concentration of electrically active Fe-Ga pairs was established.

  19. Constant-resistance deep-level transient spectroscopy in Si and Ge JFET's

    International Nuclear Information System (INIS)

    Kolev, P.V.; Deen, J.

    1999-01-01

    The recently introduced constant-resistance deep-level transient spectroscopy (CR-DLTS) was successfully applied to study virgin and radiation-damaged junction field-effect transistors (JFET's). The authors have studied three groups of devices: commercially available-discrete silicon JFET's; virgin and exposed to high-level neutron radiation silicon JFET's, custom-made by using a monolithic technology; and commercially available discrete germanium p-channel JFET's. CR-DLTS is similar to both the conductance DLTs and to the constant-capacitance variation (CC-DLTS). Unlike the conductance and current DLTS, it is independent of the transistor size and does not require simultaneous measurement of the transconductance or the free-carrier mobility for calculation of the trap concentration. Compared to the CC-DLTS, it measures only the traps inside the gate-controlled part of the space charge region. Comparisons have also been made with the CC-DLTS and standard capacitance DLTS. In addition, possibilities for defect profiling in the channel have been demonstrated. CR-DLTS was found to be a simple, very sensitive, and device area-independent technique which is well suited for measurement of a wide range of deep level concentrations in transistors

  20. High resolution deep level transient spectroscopy and process-induced defects in silicon

    International Nuclear Information System (INIS)

    Evans-Freeman, J.H.; Emiroglu, D.; Vernon-Parry, K.D.

    2004-01-01

    High resolution, or Laplace, deep level transient spectroscopy (LDLTS) enables the identification of very closely spaced energetic levels in a semiconductor bandgap. DLTS may resolve peaks with a separation of tens of electron volts, but LDLTS can resolve defect energy separations as low as a few MeV. In this paper, we present results from LDLTS applied to ion implantation-induced defects in silicon, with particular emphasis on characterisation of end-of-range interstitial type defects. Silicon was implanted with a variety of ions from mass 28 to 166. A combination of LDLTS and direct capture cross-section measurements was employed to show that electrically active small extended defects were present in the as-implanted samples. Larger dislocations were then generated in Si by oxygenation to act as a control sample. These stacking faults had typical lengths of microns, and their electrical activity was subsequently characterised by LDLTS. This was to establish the sensitivity of LDLTS to defects whose carrier capture is characterised by a non-exponential filling process and an evolving band structure as carrier capture proceeds. The LDLTS spectra show several components in capacitance transients originating from both the end-of-range defects, and the stacking faults, and also clearly show that the carrier emission rates reduce as these extended defects fill with carriers. The end-of-range defects and the stacking faults are shown to have the same electrical behaviour

  1. Irradiation induced defects containing oxygen atoms in germanium crystal as studied by deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Fukuoka, Noboru; Kambe, Yoshiyuki; Saito, Haruo; Matsuda, Koji.

    1984-05-01

    Deep level transient spectroscopy was applied to the electron trapping levels which are associated with the irradiation induced lattice defects in germanium crystals. The germanium crystals used in the study were doped with oxygen, antimony or arsenic and the defects were formed by electron irradiation of 1.5MeV or 10MeV. The nature of so called ''thermal defect'' formed by heat treatment at about 670K was also studied. The trapping levels at Esub(c)-0.13eV, Esub(c)-0.25eV and Esub(c)-0.29eV were found to be associated with defects containing oxygen atoms. From the experimental results the Esub(c)-0.25eV level was attributed to the germanium A-center (interstitial oxygen atom-vacancy pair). Another defect associated with the 715cm -1 infrared absorption band was found to have a trapping level at the same position at Esub(c)-0.25eV. The Esub(c)-0.23eV and Esub(c)-0.1eV levels were revealed to be associated with thermal donors formed by heat treatment at about 670K. Additional two peaks (levels) were observed in the DLTS spectrum. The annealing behavior of the levels suggests that the thermal donors originate from not a single type but several types of defects. (author)

  2. Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Klaver, A.; Nádaždy, V.; Zeman, M.; Swaaiij, R.A.C.M.M.

    2006-01-01

    We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the

  3. Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kada, W., E-mail: kada.wataru@gunma-u.ac.jp [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Kambayashi, Y.; Ando, Y. [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Onoda, S. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Umezawa, H.; Mokuno, Y. [National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Shikata, S. [Kwansei Gakuin Univ., 2-1, Gakuen, Mita, Hyogo 669-1337 (Japan); Makino, T.; Koka, M. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Hanaizumi, O. [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Kamiya, T.; Ohshima, T. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan)

    2016-04-01

    To investigate electrically-active deep levels in high-resistivity single-crystalline diamond, particle-induced charge transient spectroscopy (QTS) techniques were performed using 5.5 MeV alpha particles and 9 MeV carbon focused microprobes. For unintentionally-doped (UID) chemical vapor deposition (CVD) diamond, deep levels with activation energies of 0.35 eV and 0.43 eV were detected which correspond to the activation energy of boron acceptors in diamond. The results suggested that alpha particle and heavy ion induced QTS techniques are the promising candidate for in-situ investigation of deep levels in high-resistivity semiconductors.

  4. Effect of swift heavy ion irradiation on deep levels in Au /n-Si (100) Schottky diode studied by deep level transient spectroscopy

    Science.gov (United States)

    Kumar, Sandeep; Katharria, Y. S.; Kumar, Sugam; Kanjilal, D.

    2007-12-01

    In situ deep level transient spectroscopy has been applied to investigate the influence of 100MeV Si7+ ion irradiation on the deep levels present in Au/n-Si (100) Schottky structure in a wide fluence range from 5×109to1×1012ions cm-2. The swift heavy ion irradiation introduces a deep level at Ec-0.32eV. It is found that initially, trap level concentration of the energy level at Ec-0.40eV increases with irradiation up to a fluence value of 1×1010cm-2 while the deep level concentration decreases as irradiation fluence increases beyond the fluence value of 5×1010cm-2. These results are discussed, taking into account the role of energy transfer mechanism of high energy ions in material.

  5. Comparison of the nonradiative deep levels in silicon solar cells made of monocrystalline, polycrystalline and amorphous silicon using deep level transient spectroscopy (DLTS)

    International Nuclear Information System (INIS)

    Hammadeh, H.; Darwich, R.

    2005-03-01

    The aim of this work is to study the defects in solar cells fabricated from crystalline, polycrystalline and amorphous silicon. Using Deep Level Transient Spectroscopy technique, (DLTS), we have determined their activation energies, concentrations and their effect on the solar cell efficiency. Our results show a DLTS peak in crystalline silicon which we could attribute to tow peaks originating from iron contamination. In the polycrystalline based solar cells we observed a series of non conventional DLTS peaks while in amorphous silicon we observed a peak using low measurement frequencies (between 8 kHz and 20 kHz). We studied these defects and determined their activation energies as well as the capture cross section for one of them. We suggest a possible configuration of these defects. We cannot able to study the effect of these defects on the solar cell efficiency because we have not the experimental set-up which measure the solar cell efficiency. (Authors)

  6. Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

    International Nuclear Information System (INIS)

    Zhu Qing; Ma Xiao-Hua; Chen Wei-Wei; Hou Bin; Zhu Jie-Jie; Zhang Meng; Chen Li-Xiang; Cao Yan-Rong; Hao Yue

    2016-01-01

    Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors (HEMTs) has been widely utilized. The DLTS measurements under different bias conditions are carried out in this paper. Two hole-like traps with active energies of E v + 0.47 eV, and E v + 0.10 eV are observed, which are related to surface states. The electron traps with active energies of E c − 0.56 eV are located in the channel, those with E c − 0.33 eV and E c − 0.88 eV are located in the AlGaN layer. The presence of surface states has a strong influence on the detection of electron traps, especially when the electron traps are low in density. The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state. (paper)

  7. Deep-level transient spectroscopy on an amorphous InGaZnO{sub 4} Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Chasin, Adrian, E-mail: adrian.chasin@imec.be; Bhoolokam, Ajay; Nag, Manoj; Genoe, Jan; Heremans, Paul [imec, Kapeldreef 75, 3001 Leuven (Belgium); ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven (Belgium); Simoen, Eddy [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, 9000 Gent (Belgium); Gielen, Georges [ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven (Belgium)

    2014-02-24

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier electrode and with a molybdenum (Mo) Ohmic contact at the top. The DLTS technique allows to independently measure the energy and spatial distribution of subgap states in the IGZO thin film. The subgap trap concentration has a double exponential distribution as a function energy, with a value of ∼10{sup 19} cm{sup −3} eV{sup −1} at the conduction band edge and a value of ∼10{sup 17} cm{sup −3} eV{sup −1} at an energy of 0.55 eV below the conduction band. Such spectral distribution, however, is not uniform through the semiconductor film. The spatial distribution of subgap states correlates well with the background doping density distribution in the semiconductor, which increases towards the Ohmic Mo contact, suggesting that these two properties share the same physical origin.

  8. Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Alfieri, G.; Kimoto, T.

    2013-01-01

    We show that Laplace transform deep level transient spectroscopy (LDLTS) is an effective technique for the separation of the overlapping emission rates of the EH 6 and EH 7 levels, which are known to constitute EH 6/7 , a mid-gap level in n-type 4H-SiC. The analysis of the electron irradiation dose, electric field dependence, and the effects of carbon interstitials injection on the emission rates of EH 6 and EH 7 shows that EH 7 is dominant over EH 6 and confirms that their nature is related to a carbon vacancy.

  9. Deep level transient spectroscopy studies of charge traps introduced into silicon by channeling ion implantation of phosphorus

    International Nuclear Information System (INIS)

    McCallum, J.C.; Lay, M.; Deenapanray, P.N.K.; Jagadish, C.

    2002-01-01

    Full text: The operating conditions of a silicon-based quantum computer are expected to place stringent requirements on the quality of the material and the processes used to make it. In the Special Research Centre for Quantum Computer Technology, ion implantation is one of the principle processing techniques under investigation for forming an ordered array of phosphorus atoms. This technique introduces defect centres in silicon which act as charge traps. Charge traps are expected to be detrimental to operation of the device. These defect centres, their dependence on ion implantation and thermal annealing conditions are being quantified using Deep Level Transient Spectroscopy (DLTS). Since the aspect ratio of the masks required for the top-down fabrication process restrict the incident ions to a range of angles in which they may undergo channeling implantation in the silicon substrate, we have examined the effect of channeling implantation on the nature and quantity of the charge traps produced. This is the first time that DLTS studies have been performed for channeling implantation of a dopant species in silicon. DLTS is well-suited to the dose regime of ∼10 11 P/cm 3 required for the quantum computer, however, a standard DLTS measurement is unable to probe the shallow depth range of ∼ 20 nm required for the P atoms (∼ 10-15 keV implantation energy). Our aim has therefore been to perform P implants in the appropriate dose regime but using higher implantation energies, ∼ 75-450 keV, where DLTS can directly identify and profile the charge traps induced by the implantation step and monitor their annealing characteristics during subsequent processing. To map the behaviour observed in this energy regime onto the low energy range required for the quantum computer we are comparing the DLTS results to damage profiles predicted by the Monte Carlo code Crystal Trim which is used in the semiconductor industry to simulate ion implantation processes in crystalline

  10. Characterization of deep level defects in Tl6I4S single crystals by photo-induced current transient spectroscopy

    International Nuclear Information System (INIS)

    Peters, J A; Liu, Z; Sebastian, M; Wessels, B W; Im, J; Freeman, A J; Nguyen, S; Kanatzidis, M G

    2015-01-01

    Defect levels in semi-insulating Tl 6 I 4 S single crystals grown by the horizontal Bridgman technique have been characterized using photo-induced current transient spectroscopy (PICTS). These measurements revealed six electron traps located at (0.059  ±  0.007), (0.13  ±  0.012), (0.31  ±  0.074), (0.39  ±  0.019), (0.62  ±  0.110), and (0.597  ±  0.105). These defect levels are attributed to vacancies (V I , V S ) and antisite defects (I S , Tl S , Tl I ) upon comparison to calculations of native defect energy levels using density functional theory and defects recently reported from photoluminescence and photoconductivity measurements. (paper)

  11. Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

    OpenAIRE

    Al Saqri, Noor alhuda; Felix, Jorlandio F.; Aziz, Mohsin; Kunets, Vasyl P.; Jameel, Dler Adil; Taylor, David; Henini, M.; Abd El-sadek, Mahmmoud S.; Furrow, Colin; Ware, Morgan E.; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory

    2016-01-01

    InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the ...

  12. E-beam irradiation effect on CdSe/ZnSe QD formation by MBE: deep level transient spectroscopy and cathodoluminescence studies

    International Nuclear Information System (INIS)

    Kozlovsky, V I; Litvinov, V G; Sadofyev, Yu G

    2004-01-01

    CdSe/ZnSe structures containing 1 or 15 thin (3-5 monolayers) CdSe layers were studied by cathodoluminescence (CL) and deep level transient spectroscopy (DLTS). The DLTS spectra consisted of peaks from deep levels (DLs) and an additional intense peak due to electron emission from the ground quantized level in the CdSe layers. Activation energy of this additional peak correlated with an energy of the CdSe-layer emission line in the CL spectra. Electron-beam irradiation of the structure during the growth process was found to influence the DLTS and CL spectra of the CdSe layers, shifting the CdSe-layer emission line to the long-wave side. The obtained results are explained using the assumption that e-beam irradiation stimulates the formation of quantum dots of various sizes in the CdSe layers

  13. Evidence for two distinct defects contributing to the H4 deep-level transient spectroscopy peak in electron-irradiated InP

    International Nuclear Information System (INIS)

    Darwich, R.; Massarani, B.; Kaaka, M.; Awad, F.

    2000-01-01

    Deep-level transient spectroscopy (DLTS) has been used to study the dominant deep-level H4 produced in InP by electron irradiation. The characteristics of the H4 peak in Zn-doped Inp has been studied as a function of pulse duration (t p ) before and after annealing. The results show that at least two traps contribute to the H4 peak: one is a fast trap (labeled H4 f ) and the other is a show trap (labeled H4 s ). This is show through several results concerning the activation energy, the capture cross section, the full width at half-maximum, and the peak temperature shift. It is shown that both traps are irradiation defects created in P sublattice. (authors)

  14. I–V, C–V and deep level transient spectroscopy study of 24 MeV ...

    Indian Academy of Sciences (India)

    This paper describes the effect of 24 MeV proton irradiation on the electrical characteristics of a pnp bipolar junction transistor 2N 2905A. –, – and DLTS measurements are carried out to characterize the transistor before and after irradiation. The properties of deep level defects observed in the bulk of the transistor are ...

  15. Study of silicon-silicon nitride interface properties on planar (1 0 0), planar (1 1 1) and textured surfaces using deep-level transient spectroscopy

    International Nuclear Information System (INIS)

    Gong, Chun; Simoen, Eddy; Posthuma, Niels E; Van Kerschaver, Emmanuel; Poortmans, Jef; Mertens, Robert

    2010-01-01

    Deep-level transient spectroscopy (DLTS) has been applied to metal-insulator-semiconductor (MIS) capacitors fabricated on planar (1 0 0), planar (1 1 1) orientations and textured n-type silicon wafers. Low frequency direct plasma-enhanced chemical vapour deposition Si-SiN x interface properties with and without plasma NH 3 pre-treatment, with and without rapid thermal annealing (RTA) have been investigated. It is shown that three different kinds of defect states are identified at the Si-SiN x interface. For the planar (1 0 0) surface, samples with plasma NH 3 pre-treatment plus RTA show the lowest DLTS signals, which suggests the lowest overall interface states density. For planar (1 1 1) Si surfaces, plasma NH 3 pre-treatment and RTA yield a small improvement. With the textured surface, the RTA step improves the surface passivation quality further but no obvious impact is found with plasma NH 3 pre-treatment. Energy-dependent electron capture cross sections were also measured by small-pulse DLTS. The capture cross sections depend strongly on the energy level and decrease towards the conduction band edge.

  16. Studies of electron-hole recombination processes at deep levels in GaAs and GaP by means of transient optical absorption spectroscopy

    International Nuclear Information System (INIS)

    Sugiyama, T.; Ishikawa, Y.; Tanimura, K.; Hayashi, Y.; Itoh, N.

    1989-01-01

    Studies of recombination processes by means of transient optical absorption (TOA) spectroscopy in GaAs and GaP are reviewed. It is pointed out that the technique can reveal production of excited states having long lifetimes and of non-luminescent metastable states. Two distinct recombination processes in GaAs containing EL2 defects are discussed: one is at the metastable EL2 defects, accompanied with transformation to the EL2 defects and the other is at deep acceptors through pair recombination. (author) 11 refs., 2 figs

  17. Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy.

    Science.gov (United States)

    Vu, Thi Kim Oanh; Lee, Kyoung Su; Lee, Sang Jun; Kim, Eun Kyu

    2018-09-01

    We studied defect states in In0.53Ga0.47As/InP heterojunctions with interface control by group V atoms during metalorganic chemical vapor (MOCVD) deposition. From deep level transient spectroscopy (DLTS) measurements, two defects with activation energies of 0.28 eV (E1) and 0.15 eV (E2) below the conduction band edge, were observed. The defect density of E1 for In0.53Ga0.47As/InP heterojunctions with an addition of As and P atoms was about 1.5 times higher than that of the heterojunction added P atom only. From the temperature dependence of current- voltage characteristics, the thermal activation energies of In0.53Ga0.47As/InP of heterojunctions were estimated to be 0.27 and 0.25 eV, respectively. It appeared that the reverse light current for In0.53Ga0.47As/InP heterojunction added P atom increased only by illumination of a 940 nm-LED light source. These results imply that only the P addition at the interface can enhance the quality of InGaAs/InP heterojunction.

  18. A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

    Science.gov (United States)

    Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

    2017-08-01

    Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

  19. Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors

    Science.gov (United States)

    Deng, A. H.; Shan, Y. Y.; Fung, S.; Beling, C. D.

    2002-03-01

    Unlike its conventional applications in lattice defect characterization, positron annihilation lifetime technique was applied to study temperature-dependent deep level transients in semiconductors. Defect levels in the band gap can be determined as they are determined by conventional deep level transient spectroscopy (DLTS) studies. The promising advantage of this application of positron annihilation over the conventional DLTS is that it could further extract extra microstructure information of deep-level defects, such as whether a deep level defect is vacancy related or not. A demonstration of EL2 defect level transient study in GaAs was shown and the EL2 level of 0.82±0.02 eV was obtained by a standard Arrhenius analysis, similar to that in conventional DLTS studies.

  20. Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

    International Nuclear Information System (INIS)

    Gassoumi, Malek; Mosbahi, Hana; Zaidi, Mohamed Ali; Gaquiere, Christophe; Maaref, Hassen

    2013-01-01

    Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO 2 passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO 2 film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device

  1. Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

    Science.gov (United States)

    Peaker, A. R.; Markevich, V. P.; Coutinho, J.

    2018-04-01

    The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for characterizing deep-level defects in semiconductors and present some of the early work on which the principles of today's methodology are based. We outline ab-initio calculations of defect properties and give examples of how density functional theory in conjunction with formation energy and marker methods can be used to guide the interpretation of experimental results. We review recombination, generation, and trapping of charge carriers associated with defects. We consider thermally driven emission and capture and describe the techniques of Deep Level Transient Spectroscopy (DLTS), high resolution Laplace DLTS, admittance spectroscopy, and scanning DLTS. For the study of minority carrier related processes and wide gap materials, we consider Minority Carrier Transient Spectroscopy (MCTS), Optical DLTS, and deep level optical transient spectroscopy together with some of their many variants. Capacitance, current, and conductance measurements enable carrier exchange processes associated with the defects to be detected. We explain how these methods are used in order to understand the behaviour of point defects and the determination of charge states and negative-U (Hubbard correlation energy) behaviour. We provide, or reference, examples from a wide range of materials including Si, SiGe, GaAs, GaP, GaN, InGaN, InAlN, and ZnO.

  2. Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

    Science.gov (United States)

    Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

    2018-01-09

    It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

  3. Spectroscopy of deep doping levels in Cd0.99Mn0.01Te:Ga

    International Nuclear Information System (INIS)

    Szatkowski, J.; Placzek-Popko, E.; Sieranski, K.; Bieg, B.

    1997-01-01

    The investigation results of deep energy levels in Cd 0.99 Mn 0.01 Te (n-type) doped with gallium have been presented. Deep level transient spectroscopy (DLTS) measurements have been carried out in temperature range 80-420 K. The results show five types of electron traps. The activation energy of trapping levels and electron trapping cross-sections have been determined for observed traps. 2 refs, 3 figs, 1 tab

  4. Capacitance transient study of a bistable deep level in e--irradiated n-type 4H-SiC

    International Nuclear Information System (INIS)

    Beyer, F C; Hemmingsson, C G; Pedersen, H; Henry, A; Janzén, E; Isoya, J; Ohshima, T; Morishita, N

    2012-01-01

    Using capacitance transient techniques, a bistable centre, called FB centre here, was observed in electron irradiated 4H-SiC. In configuration A, the deep level known as EH5 (E a = E C - 1.07 eV) is detected in the deep level transient spectroscopy spectrum, whereas for configuration B no obvious deep level is observed in the accessible part of the band gap. Isochronal annealing revealed the transition temperatures to be T A→B > 730 K and for the opposite process T B→A ≈ 710 K. The energy needed to conduct the transformations were determined to be E A (A → B) = (2.1 ± 0.1) eV and E A (B → A) = (2.3 ± 0.1) eV, respectively. The pre-factor indicated an atomic jump process for the opposite transition A → B and a charge carrier-emission dominated process in the case of B → A. Minority charge carrier injection enhanced the transformation from configuration B to configuration A by lowering the transition barrier by about 1.4 eV. Since the bistable FB centre is already present after low-energy electron irradiation (200 keV), it is likely related to carbon.

  5. Electrical and optical deep level spectroscopy on Os doped p-InP

    International Nuclear Information System (INIS)

    Parveen, S.; Zafar, N.; Khan, A.; Qureshi, U.S.; Iqbal, M.Z.

    1997-01-01

    Transition metal (TM) impurities are introduced for obtaining semi insulating (III-V) compound semiconductors used as base material for electronic and optoelectronic devices. TM doping introduces near mid gap levels which are used to compensate shallow level donors and acceptors in (III-V) compound semiconductors. The study of electrical properties of heavier transition metals in InP has been turned to an active field of research owing to their potential to produce thermally stable semi insulating substrate materials. Osmium has been tried for this purpose in our work. InP: Os samples have been grown by low pressure metalorganic chemical vapour deposition (LP-MOCVD). Optical and electrical Deep Level Transient Spectroscopy Techniques have been used to characterise osmium related deep level defects in the p-type samples. Three majority carrier (Hole) emitting levels OsA, OsB, OsC and one minority carrier (electron) emitting level Osl are observed in the DLTS and ODLTS measurements on p-type InP:Os. ON optical injection, only Osl appears and all other majority carrier emitting levels disappear dramatically. Special emphasis is given to the detailed comparison by ODLTS and EDLTS, which yields important information on the relative capture cross-sections of Osmium induced levels in p-InP. (author)

  6. Transient Infrared Emission Spectroscopy

    Science.gov (United States)

    Jones, Roger W.; McClelland, John F.

    1989-12-01

    Transient Infrared Emission Spectroscopy (TIRES) is a new technique that reduces the occurrence of self-absorption in optically thick solid samples so that analytically useful emission spectra may be observed. Conventional emission spectroscopy, in which the sample is held at an elevated, uniform temperature, is practical only for optically thin samples. In thick samples the emission from deep layers of the material is partially absorbed by overlying layers.1 This self-absorption results in emission spectra from most optically thick samples that closely resemble black-body spectra. The characteristic discrete emission bands are severely truncated and altered in shape. TIRES bypasses this difficulty by using a laser to heat only an optically thin surface layer. The increased temperature of the layer is transient since the layer will rapidly cool and thicken by thermal diffusion; hence the emission collection must be correlated with the laser heating. TIRES may be done with both pulsed and cw lasers.2,3 When a pulsed laser is used, the spectrometer sampling must be synchronized with the laser pulsing so that only emission during and immediately after each laser pulse is observed.3 If a cw laser is used, the sample must move rapidly through the beam. The hot, transient layer is then in the beam track on the sample at and immediately behind the beam position, so the spectrometer field of view must be limited to this region near the beam position.2 How much self-absorption the observed emission suffers depends on how thick the heated layer has grown by thermal diffusion when the spectrometer samples the emission. Use of a pulsed laser synchronized with the spectrometer sampling readily permits reduction of the time available for heat diffusion to about 100 acs .3 When a cw laser is used, the heat-diffusion time is controlled by how small the spectrometer field of view is and by how rapidly the sample moves past within this field. Both a very small field of view and a

  7. Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

    Science.gov (United States)

    Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

    2018-04-01

    For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

  8. Deep-level optical spectroscopy investigation of N-doped TiO2 films

    International Nuclear Information System (INIS)

    Nakano, Yoshitaka; Morikawa, Takeshi; Ohwaki, Takeshi; Taga, Yasunori

    2005-01-01

    N-doped TiO 2 films were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 deg. C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined from x-ray photoelectron spectroscopy measurements. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at ∼1.18 and ∼2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. Additionally, the 2.48 eV band is newly introduced by the N doping and contributes to band-gap narrowing by mixing with the O 2p valence band

  9. Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

    International Nuclear Information System (INIS)

    Armstrong, A.; Caudill, J.; Ringel, S. A.; Corrion, A.; Poblenz, C.; Mishra, U. K.; Speck, J. S.

    2008-01-01

    Deep level defects in p-type GaN:Mg grown by molecular beam epitaxy were characterized using steady-state photocapacitance and deep level optical spectroscopy (DLOS). Low frequency capacitance measurements were used to alleviate dispersion effects stemming from the deep Mg acceptor. Use of DLOS enabled a quantitative survey of both deep acceptor and deep donor levels, the latter being particularly important due to the limited understanding of minority carrier states for p-type GaN. Simultaneous electron and hole photoemissions resulted in a convoluted deep level spectrum that was decoupled by emphasizing either majority or minority carrier optical emission through control of the thermal filling time conditions. In this manner, DLOS was able to resolve and quantify the properties of deep levels residing near both the conduction and valence bandedges in the same sample. Bandgap states through hole photoemission were observed at E v +3.05 eV, E v +3.22 eV and E v +3.26 eV. Additionally, DLOS revealed levels at E c -3.24 eV and E c -2.97 eV through electron emission to the conduction band with the former attributed to the Mg acceptor itself. The detected deep donor concentration is less than 2% of activated [Mg] and demonstrates the excellent quality of the film

  10. Real-Time Monitoring of Low-Level Mixed-Waste Loading during Polyethylene Microencapsulation using Transient Infrared Spectroscopy

    International Nuclear Information System (INIS)

    Jones, Roger W.; Kalb, Paul D.; McClelland, John F.; Ochiai, Shukichi

    1999-01-01

    In polyethylene microencapsulation, low-level mixed waste (LLMW) is homogenized with molten polyethylene and extruded into containers, resulting in a lighter, lower-volume waste form than cementation and grout methods produce. Additionally, the polyethylene-based waste form solidifies by cooling, with no risk of the waste interfering with cure, as may occur with cementation and grout processes. We have demonstrated real-time monitoring of the polyethylene encapsulation process stream using a noncontact device based on transient infrared spectroscopy (TIRS). TIRS can acquire mid-infrared spectra from solid or viscous liquid process streams, such as the molten, waste-loaded polyethylene stream that exits the microencapsulation extruder. The waste loading in the stream was determined from the TIRS spectra using partial least squares techniques. The monitor has been demonstrated during the polyethylene microencapsulation of nitrate-salt LLMW and its surrogate, molten salt oxidation LLMW and its surrogate, and flyash. The monitor typically achieved a standard error of prediction for the waste loading of about 1% by weight with an analysis time under 1 minute

  11. A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps

    Science.gov (United States)

    Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu

    2018-04-01

    In this study, GaN MOS capacitance-voltage device simulations considering various interface and bulk traps are performed in the transient mode. The simulations explain various features of capacitance-voltage curves, such as plateau, hysteresis, and frequency dispersions, which are commonly observed in measurements of GaN MOS capacitors and arise from complicated combinations of interface and bulk deep-level traps. The objective of the present study is to provide a good theoretical tool to understand the physics of various nonideal measured curves.

  12. Spectroscopy of deep doping levels in Cd{sub 0.99}Mn{sub 0.01}Te:Ga; Spektroskopia glebokich poziomow domieszkowych w Cd{sub 0.99}Mn{sub 0.01}Te:Ga

    Energy Technology Data Exchange (ETDEWEB)

    Szatkowski, J.; Placzek-Popko, E.; Sieranski, K. [Politechnika Wroclawska, Wroclaw (Poland); Bieg, B. [Wyzsza Szkola Morska, Szczecin (Poland)

    1997-12-01

    The investigation results of deep energy levels in Cd{sub 0.99}Mn{sub 0.01}Te (n-type) doped with gallium have been presented. Deep level transient spectroscopy (DLTS) measurements have been carried out in temperature range 80-420 K. The results show five types of electron traps. The activation energy of trapping levels and electron trapping cross-sections have been determined for observed traps. 2 refs, 3 figs, 1 tab.

  13. Attosecond transient absorption spectroscopy of molecular hydrogen

    International Nuclear Information System (INIS)

    Martín, Fernando; González-Castrillo, Alberto; Palacios, Alicia; Argenti, Luca; Cheng, Yan; Chini, Michael; Wang, Xiaowei; Chang, Zenghu

    2015-01-01

    We extend attosecond transient absorption spectroscopy (ATAS) to the study of hydrogen molecules, demonstrating the potential of the technique to resolve – simultaneously and with state resolution – both the electronic and nuclear dynamics. (paper)

  14. Investigations of Deep-Level Fe-centres in Si by Mössbauer Spectroscopy

    CERN Multimedia

    Dietrich, M

    2002-01-01

    %IS359\\\\ \\\\Electronic, vibrational and diffusional properties of interstitial and substitutional Fe impurities in silicon are studied by $ ^{57} $Fe Mössbauer emission spectroscopy utilizing implanted radioactive $ ^{57}$Mn$^{+} $ parent ions from ISOLDE as probe atoms. Thus the electronic charge density and the impurity mean-square vibrational amplitude shall be determined for substitutional Fe$_{s} $ and for interstitial Fe$_{i}^{0/+} $ in its two different charge states. These quantities are complementary to previously determined hyperfine interaction parameters and are expected to shed light on the nature of the deviations between calculated and measured parameters. The supposedly different diffusivities of interstitial Fe$_{i}^{0} $ and Fe$_{i}^{+} $ shall be measured by the broadening of the Mössbauer lines, i.e. at a temperature where diffusion jumps occur on an atomic scale within the lifetime of the Mössbauer state.

  15. Transient behaviour of deep underground salt caverns

    International Nuclear Information System (INIS)

    Karimi-Jafari, M.

    2007-11-01

    This work deals with the transient behaviour of deep underground salt caverns. It has been shown that a cavern is a complex system, in which there are mechanical, thermal, chemical and hydraulic evolutions. The importance of the transient evolutions, particularly the role of the 'reverse' creep in the interpretation of the tightness test in a salt cavern is revealed. Creep is characterized by a formulation of the behaviour law which presents the advantage, in a practical point of view, to only have a reduced number of parameters while accounting of the essential of what it is observed. The initiation of the rupture in the effective traction in a salt cavern rapidly pressurized is discussed. A model fitted to a very long term behaviour (after abandonment) is developed too. In this case too, a lot of phenomena, more or less coupled, occur, when the existing literature took only into account some phenomena. (O.M.)

  16. Laser spectroscopy and dynamics of transient species

    Energy Technology Data Exchange (ETDEWEB)

    Clouthier, D.J. [Univ. of Kentucky, Lexington (United States)

    1993-12-01

    The goal of this program is to study the vibrational and electronic spectra and excited state dynamics of a number of transient sulfur and oxygen species. A variety of supersonic jet techniques, as well as high resolution FT-IR and intracavity dye laser spectroscopy, have been applied to these studies.

  17. Spectroscopy of Deep Traps in Cu2S-CdS Junction Structures

    Directory of Open Access Journals (Sweden)

    Eugenijus Gaubas

    2012-12-01

    Full Text Available Cu2S-CdS junctions of the polycrystalline material layers have been examined by combining the capacitance deep level transient spectroscopy technique together with white LED light additional illumination (C-DLTS-WL and the photo-ionization spectroscopy (PIS implemented by the photocurrent probing. Three types of junction structures, separated by using the barrier capacitance characteristics of the junctions and correlated with XRD distinguished precipitates of the polycrystalline layers, exhibit different deep trap spectra within CdS substrates.

  18. Deep levels in silicon–oxygen superlattices

    International Nuclear Information System (INIS)

    Simoen, E; Jayachandran, S; Delabie, A; Caymax, M; Heyns, M

    2016-01-01

    This work reports on the deep levels observed in Pt/Al 2 O 3 /p-type Si metal-oxide-semiconductor capacitors containing a silicon–oxygen superlattice (SL) by deep-level transient spectroscopy. It is shown that the presence of the SL gives rise to a broad band of hole traps occurring around the silicon mid gap, which is absent in reference samples with a silicon epitaxial layer. In addition, the density of states of the deep layers roughly scales with the number of SL periods for the as-deposited samples. Annealing in a forming gas atmosphere reduces the maximum concentration significantly, while the peak energy position shifts from close-to mid-gap towards the valence band edge. Based on the flat-band voltage shift of the Capacitance–Voltage characteristics it is inferred that positive charge is introduced by the oxygen atomic layers in the SL, indicating the donor nature of the underlying hole traps. In some cases, a minor peak associated with P b dangling bond centers at the Si/SiO 2 interface has been observed as well. (paper)

  19. Ultraviolet photoelectron spectroscopy of transient species

    International Nuclear Information System (INIS)

    Leeuw, D.M. de.

    1979-01-01

    Transient species are studied in the isolation of the gas phase using ultraviolet photoelectron spectroscopy (PES). A description of the equipment used and a discussion of some theoretical topics, which play a role in the interpretation of PE spectra, are given. Koopmans' theorem, Hartree-Fock-Slater (HFS) calculations and the sum rule are discussed. A versatile ultraviolet PE spectrometer, designed specifically for this purpose, has been built and the construction and performance of this instrument are described. (Auth.)

  20. Dual-wavelength photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity

    Science.gov (United States)

    Musiienko, A.; Grill, R.; Moravec, P.; Korcsmáros, G.; Rejhon, M.; Pekárek, J.; Elhadidy, H.; Šedivý, L.; Vasylchenko, I.

    2018-04-01

    Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobility was chosen for the detailed study involving measurements at both the steady and dynamic regimes. We revealed that the Hall mobility and photoconductivity can be both enhanced and suppressed by an additional illumination at certain photon energies. The anomalous mobility decrease was explained by an excitation of the inhomogeneously distributed deep level at the energy Ev + 1.0 eV, thus enhancing potential non-uniformities. The appearance of negative differential photoconductivity was interpreted by an intensified electron occupancy of that level by a direct valence band-to-level excitation. Modified Shockley-Read-Hall theory was used for fitting experimental results by a model comprising five deep levels. Properties of the deep levels and their impact on the device performance were deduced.

  1. Spectroscopy and reactions of vibrationally excited transient molecules

    Energy Technology Data Exchange (ETDEWEB)

    Dai, H.L. [Univ. of Pennsylvania, Philadelphia (United States)

    1993-12-01

    Spectroscopy, energy transfer and reactions of vibrationally excited transient molecules are studied through a combination of laser-based excitation techniques and efficient detection of emission from the energized molecules with frequency and time resolution. Specifically, a Time-resolved Fourier Transform Emission Spectroscopy technique has been developed for detecting dispersed laser-induced fluorescence in the IR, visible and UV regions. The structure and spectroscopy of the excited vibrational levels in the electronic ground state, as well as energy relaxation and reactions induced by specific vibronic excitations of a transient molecule can be characterized from time-resolved dispersed fluorescence in the visible and UV region. IR emissions from highly vibrational excited levels, on the other hand, reveal the pathways and rates of collision induced vibrational energy transfer.

  2. Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy

    Science.gov (United States)

    Wang, Buguo; Anders, Jason; Leedy, Kevin; Schuette, Michael; Look, David

    2018-02-01

    InGaZnO (IGZO) is a promising semiconductor material for thin-film transistors (TFTs) used in DC and RF switching applications, especially since it can be grown at low temperatures on a wide variety of substrates. Enhancement-mode TFTs based on IGZO thin films grown by pulsed laser deposition (PLD) have been recently fabricated and these transistors show excellent performance; however, compositional variations and defects can adversely affect film quality, especially in regard to electrical properties. In this study, we use thermally stimulated current (TSC) spectroscopy to characterize the electrical properties and the deep traps in PLD-grown IGZO thin films. It was found that the as-grown sample has a DC activation energy of 0.62 eV, and two major traps with activation energies at 0.16-0.26 eV and at 0.90 eV. However, a strong persistent photocurrent (PPC) sometimes exists in the as-grown sample, so we carry out post-growth annealing in an attempt to mitigate the effect. It was found that annealing in argon increases the conduction, produces more PPC and also makes more traps observable. Annealing in air makes the film more resistive, and removes PPC and all traps but one. This work demonstrates that current-based trap emission, such as that associated with the TSC, can effectively reveal electronic defects in highlyresistive semiconductor materials, especially those are not amenable to capacitance-based techniques, such as deeplevel transient spectroscopy (DLTS).

  3. Studies of deep levels in He+-irradiated silicon

    International Nuclear Information System (INIS)

    Schmidt, D.C.; Barbot, J.F.; Blanchard, C.

    1997-01-01

    Deep levels created in n-epitaxial silicon by alpha particle irradiation in the dose range from 10 9 to 10 13 particles/cm 2 have been investigated by the deep level transient spectroscopy technique and capacitance-voltage profiling. Under low fluence irradiation at least four main electron traps have been observed. With further increase in irradiation fluence, two new levels located at E c -0.56 eV and E c -0.64 eV appear on the high-temperature side of the DLTS signal. The slope change observed in the amplitude variations of the singly negative charge state of the divacancy versus the dose takes place when these two new levels appear. This suggests that both are multivacancy-related defects. After annealing at 350 C for 15 min, all electron traps have disappeared. Moreover, no shallow levels are created during the annealing. (orig.)

  4. Investigation of deep levels in GaInNAs

    International Nuclear Information System (INIS)

    Abulfotuh, F.; Balcioglu, A.; Friedman, D.; Geisz, J.; Kurtz, S.

    1999-01-01

    This paper presents and discusses the first Deep-Level transient spectroscopy (DLTS) data obtained from measurements carried out on both Schottky barriers and homojunction devices of GaInNAs. The effect of N and In doping on the electrical properties of the GaNInAs devices, which results in structural defects and interface states, has been investigated. Moreover, the location and densities of deep levels related to the presence of N, In, and N+In are identified and correlated with the device performance. The data confirmed that the presence of N alone creates a high density of shallow hole traps related to the N atom and structural defects in the device. Doping by In, if present alone, also creates low-density deep traps (related to the In atom and structural defects) and extremely deep interface states. On the other hand, the co-presence of In and N eliminates both the interface states and levels related to structural defects. However, the device still has a high density of the shallow and deep traps that are responsible for the photocurrent loss in the GaNInAs device, together with the possible short diffusion length. copyright 1999 American Institute of Physics

  5. Investigation of Deep Levels in GaInNas

    International Nuclear Information System (INIS)

    Balcioglu, A.; Friedman, D.; Abulfotuh, F.; Geisz, J.; Kurtz, S.

    1998-01-01

    This paper presents and discusses the first Deep-Level transient spectroscopy (DLTS) data obtained from measurements carried out on both Schottky barriers and homojunction devices of GaInNAs. The effect of N and In doping on the electrical properties of the GaNInAs devices, which results in structural defects and interface states, has been investigated. Moreover, the location and densities of deep levels related to the presence of N, In, and N+In are identified and correlated with the device performance. The data confirmed that the presence of N alone creates a high density of shallow hole traps related to the N atom and structural defects in the device. Doping by In, if present alone, also creates low-density deep traps (related to the In atom and structural defects) and extremely deep interface states. On the other hand, the co-presence of In and N eliminates both the interface states and levels related to structural defects. However, the device still has a high density of the shallow and deep traps that are responsible for the photocurrent loss in the GaNInAs device, together with the possible short diffusion length

  6. Hole traps in n-GaN detected by minority carrier transient spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Tokuda, Yutaka; Yamada, Yujiro; Shibata, Tatsunari; Yamaguchi, Shintaro [Department of Electrical and Electronics Engineering, Aichi Institute of Technology, Yakusa, 470-0392 Toyota (Japan); Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu [Toyota Central R and D Laboratories, Inc., Nagakute, 480-1192 Aichi (Japan)

    2011-07-15

    Minority carrier transient spectroscopy (MCTS) has been applied for the detection of hole traps in n-GaN using Schottky diodes. MCTS using 355 nm light emitting diodes is performed under isothermal conditions in the temperature range 280 to 330 K for n-GaN grown by metalorganic chemical vapor deposition on sapphire. Isothermal MCTS spectra reveal the E{sub v} + 0.86 eV hole trap with the trap concentration of 1.1x10{sup 16} cm{sup -3}. The E{sub v} + 0.86 eV hole trap has the higher concentration as compared to electron traps observed by deep level transient spectroscopy. Thus, the isothermal MCTS around room temperature provides a convenient way to evaluate the dominant trap in n-GaN. It is suggested that the E{sub v} + 0.86 eV hole trap is associated with the V{sub Ga}-related defect or carbon-related defect. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

    International Nuclear Information System (INIS)

    Armstrong, A.; Arehart, A.R.; Green, D.; Mishra, U.K.; Speck, J.S.; Ringel, S.A.

    2005-01-01

    The impact of C incorporation on the deep level spectrum of n-type and semi-insulating GaN:C:Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was investigated by the combination of deep level transient spectroscopy, steady-state photocapacitance, and transient deep level optical spectroscopy. The deep level spectra of the GaN:C:Si samples exhibited several band-gap states. A monotonic relation between systematic doping with C and quantitative trap concentration revealed C-related deep levels. A deep acceptor at E c -2.05 eV and a deep donor at E c -0.11 eV are newly reported states, and the latter is the first directly observed deep level attributed to the C Ga defect. A configuration-coordinate model involving localized lattice distortion revealed strong evidence that C-related deep levels at E c -3.0 eV and E ν +0.9 eV are likely identical and associated with the yellow luminescence in C-doped GaN films. Of the deep levels whose trap concentration increase with C doping, the band-gap states at E c -3.0 and 3.28 eV had the largest concentration, implying that free-carrier compensation by these deep levels is responsible for the semi-insulating behavior of GaN:C:Si films grown by MBE. The differing manner by which C incorporation in GaN may impact electrical conductivity in films grown by MBE and metal-organic chemical-vapor deposition is discussed

  8. Correlation of a generation-recombination center with a deep level trap in GaN

    International Nuclear Information System (INIS)

    Nguyen, X. S.; Lin, K.; Zhang, Z.; Arehart, A. R.; Ringel, S. A.; McSkimming, B.; Speck, J. S.; Fitzgerald, E. A.; Chua, S. J.

    2015-01-01

    We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E c  − 0.26 eV, E c  − 0.59 eV, and E c  − 0.71 eV. The noise spectroscopy identified a generation recombination centre at E c  − 0.65 ± 0.1 eV with a recombination lifetime of 65 μs at 300 K. This level is considered to be the same as the one at E c  − 0.59 eV measured from DLTS, as they have similar trap densities and capture cross section. This result shows that some deep levels contribute to noise generation in GaN materials

  9. Deep knowledge expert system for diagnosis of multiple-failure severe transients in nuclear power plant

    International Nuclear Information System (INIS)

    Martin, R.P.; Nassersharif, B.

    1987-01-01

    TAMUS (Transient Analysis of MUltiple-failure Simulations) is a prototype expert system which is the result of a project investigating and implementing event confidence-levels (used by reactor safety experts in reactor transient analysis) in the form of an expert system. Currently, TAMUS is designed to diagnose reactor transients by analyzing simulated sensor and plant thermal hydraulic information from a system simulation. TAMUS uses a knowledge base of existing emergency nuclear plant operating guidelines and detailed thermal-hydraulic calculating results correlated to confidence-levels. TAMUS can diagnose a number of reactor transients (for example, loss-of-coolant accidents, steam-generator-tube ruptures, loss-of-offsite power, etc.). Future work includes the expansion of the knowledge base and improvement of the deep-knowledge qualitative models

  10. Dynamics in photosynthetic transient complexes studied by paramagnetic NMR spectroscopy

    NARCIS (Netherlands)

    Scanu, Sandra

    2013-01-01

    This PhD thesis focuses on fundamental aspects of protein-protein interactions. A multidisciplinary methodology for the detection and visualization of transient, lowly-populated encounter protein complexes is described. The new methodology combined paramagnetic NMR spectroscopy with computational

  11. Impact of proton irradiation on deep level states in n-GaN

    International Nuclear Information System (INIS)

    Zhang, Z.; Arehart, A. R.; Cinkilic, E.; Ringel, S. A.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Speck, J. S.

    2013-01-01

    Deep levels in 1.8 MeV proton irradiated n-type GaN were systematically characterized using deep level transient spectroscopies and deep level optical spectroscopies. The impacts of proton irradiation on the introduction and evolution of those deep states were revealed as a function of proton fluences up to 1.1 × 10 13 cm −2 . The proton irradiation introduced two traps with activation energies of E C - 0.13 eV and 0.16 eV, and a monotonic increase in the concentration for most of the pre-existing traps, though the increase rates were different for each trap, suggesting different physical sources and/or configurations for these states. Through lighted capacitance voltage measurements, the deep levels at E C - 1.25 eV, 2.50 eV, and 3.25 eV were identified as being the source of systematic carrier removal in proton-damaged n-GaN as a function of proton fluence

  12. Ultrafast Degenerate Transient Lens Spectroscopy in Semiconductor Nanosctructures

    Directory of Open Access Journals (Sweden)

    Leontyev A.V.

    2015-01-01

    Full Text Available We report the non-resonant excitation and probing of the nonlinear refractive index change in bulk semiconductors and semiconductor quantum dots through degenerate transient lens spectroscopy. The signal oscillates at the center laser field frequency, and the envelope of the former in quantum dots is distinctly different from the one in bulk sample. We discuss the applicability of this technique for polarization state probing in semiconductor media with femtosecond temporal resolution.

  13. Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se{sub 2} based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, D.W.; Seol, M.S.; Kwak, D.W.; Oh, J.S. [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of); Jeong, J.H. [Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of)

    2012-08-01

    Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se{sub 2} (CIGS) based thin films for solar cell were investigated. CIGS films with a thickness of 3 {mu}m were grown on a soda-lime glass substrate by a co-evaporation method, and then were implanted with protons. To study deep level defects in the proton implanted CIGS films, deep level transient spectroscopy measurements on the CIGS-based solar cells were carried out, these measurements found 6 traps (including 3 hole traps and 3 electron traps). In the proton implanted CIGS films, the deep level defects, which are attributed to the recombination centers of the CIGS solar cell, were significantly reduced in intensity, while a deep level defect was generated around 0.28 eV above the valence band maximum. Therefore, we suggest that most deep level defects in CIGS films can be controlled by hydrogen effects. - Highlights: Black-Right-Pointing-Pointer Proton implanted Cu(In,Ga)Se{sub 2} thin film and solar cell are prepared. Black-Right-Pointing-Pointer Deep level defects of Cu(In,Ga)Se{sub 2} thin film and solar cell are investigated. Black-Right-Pointing-Pointer Hydrogenation using proton implantation and H{sub 2} annealing reduces deep level defects. Black-Right-Pointing-Pointer Hydrogenation could enhance electrical properties and efficiency of solar cells.

  14. Processes governing transient responses of the deep ocean buoyancy budget to a doubling of CO2

    Science.gov (United States)

    Palter, J. B.; Griffies, S. M.; Hunter Samuels, B. L.; Galbraith, E. D.; Gnanadesikan, A.

    2012-12-01

    Recent observational analyses suggest there is a temporal trend and high-frequency variability in deep ocean buoyancy in the last twenty years, a phenomenon reproduced even in low-mixing models. Here we use an earth system model (GFDL's ESM2M) to evaluate physical processes that influence buoyancy (and thus steric sea level) budget of the deep ocean in quasi-steady state and under a doubling of CO2. A new suite of model diagnostics allows us to quantitatively assess every process that influences the buoyancy budget and its temporal evolution, revealing surprising dynamics governing both the equilibrium budget and its transient response to climate change. The results suggest that the temporal evolution of the deep ocean contribution to sea level rise is due to a diversity of processes at high latitudes, whose net effect is then advected in the Eulerian mean flow to mid and low latitudes. In the Southern Ocean, a slowdown in convection and spin up of the residual mean advection are approximately equal players in the deep steric sea level rise. In the North Atlantic, the region of greatest deep steric sea level variability in our simulations, a decrease in mixing of cold, dense waters from the marginal seas and a reduction in open ocean convection causes an accumulation of buoyancy in the deep subpolar gyre, which is then advected equatorward.

  15. Studies on deep electronic levels in silicon and aluminium gallium arsenide alloys

    International Nuclear Information System (INIS)

    Pettersson, H.

    1993-01-01

    This thesis reports on investigations of the electrical and optical properties of deep impurity centers, related to the transition metals (TMs) Ti, Mo, W, V and Ni, in silicon. Emission rates, capture cross sections and photoionization cross sections for these impurities were determined by means of various Junction Space Charge Techniques (JSCTs), such as Deep Level Transient Spectroscopy (DLTS), dark capacitance transient and photo capacitance transient techniques. Changes in Gibbs free energy as a function of temperature were calculated for all levels. From this temperature dependence, the changes in enthalpy and entropy involved in the electron and hole transitions were deduced. The influence of high electric fields on the electronic levels in chalcogen-doped silicon were investigated using the dark capacitance transient technique. The enhancement of the electron emission from the deep centers indicated a more complex field enhancement model than the expected Poole-Frenkel effect for coulombic potentials. The possibility to determine charge states of defects using the Poole-Frenkel effect, as often suggested, is therefore questioned. The observation of a persistent decrease of the dark conductivity due to illumination in simplified AlGaAs/GaAs high Electron Mobility Transistors (HEMTs) over the temperature range 170K< T<300K is reported. A model for this peculiar behavior, based on the recombination of electrons in the two-dimensional electron gas (2DEG) located at the AlGaAs/GaAs interface with holes generated by a two-step excitation process via the deep EL2 center in the GaAs epilayer, is put forward

  16. Deep millimeter spectroscopy observations toward NGC 1068

    Science.gov (United States)

    Qiu, Jianjie; Wang, Junzhi; Shi, Yong; Zhang, Jiangshui; Fang, Min; Li, Fei

    2018-05-01

    Aims: We aim for a better understanding of gas properties in the circum-nuclear disk (CND) region of the nearby gas-rich Seyfert 2 galaxy NGC 1068. We focus on line identification and the basic physical parameters estimation of molecular gas in the CND region. Methods: We used the IRAM 30 m telescope to conduct deep millimeter spectroscopy observations toward the center of NGC 1068. Results: Thirty-two lines were detected in this galaxy, 15 lines of wich were detected for the first time. With a sensitivity better by about a factor of 4 than observations in the literature for this source at 3 mm band, we detected several weak lines for the first time in this source, such as lines from CH3CCH, CH3OCH3, and HC18O+. Column densities of these molecules were estimated based on line emissions. Some marginal detections in the literature, such as HN13C (1-0), were confirmed. CH3OCH3 was detected for the first time in external galaxies. Lines from several carbon chain molecules and shock-related molecules were also detected in this source. The reduced spectrum (FITS file) is only available at the CDS via anonymous ftp to cdsarc.u-strasbg.fr (130.79.128.5) or via http://cdsarc.u-strasbg.fr/viz-bin/qcat?J/A+A/613/A3

  17. Localized deep levels in AlxGa1−xN epitaxial films with various Al compositions

    International Nuclear Information System (INIS)

    Shi Li-Yang; Shen Bo; Wang Ping; Yan Jian-Chang; Wang Jun-Xi

    2014-01-01

    By using high-temperature deep-level transient spectroscopy (HT-DLTS) and other electrical measurement techniques, localized deep levels in n-type Al x Ga 1−x N epitaxial films with various Al compositions (x = 0, 0.14, 0.24, 0.33, and 0.43) have been investigated. It is found that there are three distinct deep levels in Al x Ga 1−x N films, whose level position with respect to the conduction band increases as Al composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in Al x Ga 1−x N films. (condensed matter: structural, mechanical, and thermal properties)

  18. Radiation induced deep level defects in bipolar junction transistors under various bias conditions

    International Nuclear Information System (INIS)

    Liu, Chaoming; Yang, Jianqun; Li, Xingji; Ma, Guoliang; Xiao, Liyi; Bollmann, Joachim

    2015-01-01

    Bipolar junction transistor (BJT) is sensitive to ionization and displacement radiation effects in space. In this paper, 35 MeV Si ions were used as irradiation source to research the radiation damage on NPN and PNP bipolar transistors. The changing of electrical parameters of transistors was in situ measured with increasing irradiation fluence of 35 MeV Si ions. Using deep level transient spectroscopy (DLTS), defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions can affect the concentration of deep level defects, and the radiation damage induced by heavy ions.

  19. Iron and intrinsic deep level states in Ga2O3

    Science.gov (United States)

    Ingebrigtsen, M. E.; Varley, J. B.; Kuznetsov, A. Yu.; Svensson, B. G.; Alfieri, G.; Mihaila, A.; Badstübner, U.; Vines, L.

    2018-01-01

    Using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga2O3. First, our results indicate that FeGa, and not an intrinsic defect, acts as the deep acceptor responsible for the often dominating E2 level at ˜0.78 eV below the conduction band minimum. Second, by provoking additional intrinsic defect generation via proton irradiation, we identified the emergence of a new level, labeled as E2*, having the ionization energy very close to that of E2, but exhibiting an order of magnitude larger capture cross section. Importantly, the properties of E2* are found to be consistent with its intrinsic origin. As such, contradictory opinions of a long standing literature debate on either extrinsic or intrinsic origin of the deep acceptor in question converge accounting for possible contributions from E2 and E2* in different experimental conditions.

  20. Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation

    International Nuclear Information System (INIS)

    Benzohra, Mohamed; Olivie, Francois; Idrissi-Benzohra, Malika; Ketata, Kaouther; Ketata, Mohamed

    2002-01-01

    It is well established that low energy B + ion implantation into Ge- (or Si) implantation pre-amorphised silicon allows ultra-shallow p + n junctions formation. However, this process is known to generate defects such as dislocation loops, vacancies and interstitials which can act as vehicles to different mechanisms inducing electrically active levels into the silicon bulk. The junctions studied have been obtained using 3 keV/10 15 cm -2 B + implantation into Ge-implantation pre-amorphised substrates and into a reference crystalline substrate. Accurate measurements using deep level transient spectroscopy (DLTS) and isothermal transient capacitance ΔC(t,T) were performed to characterise these levels. Such knowledge is crucial to improve the device characteristics. In order to sweep the silicon band gap, various experimental conditions were considered. The analysis of DLTS spectra have first showed three deep levels associated to secondary induced defects. Their concentration profiles were derived from isothermal transient capacitance at depths up to 3.5 μm into the silicon bulk and allowed us to detect a new deep level. The evolution of such defect distribution in correlation with the technological steps is discussed. The end of range (EOR) defect influence on electrical activity of secondary induced defects in ultra-shallow p + n diodes is clearly demonstrated

  1. Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

    Energy Technology Data Exchange (ETDEWEB)

    Pousset, J.; Farella, I.; Cola, A., E-mail: adriano.cola@le.imm.cnr.it [Institute for Microelectronics and Microsystems—Unit of Lecce, National Council of Research (IMM/CNR), Lecce I-73100 (Italy); Gambino, S. [Dipartimento di Matematica e Fisica “Ennio De Giorgi,” Università del Salento, Lecce I-73100 (Italy); CNR NANOTEC—Istituto di Nanotecnologia, Polo di Nanotecnologia c/o Campus Ecotekne, via Monteroni, 73100 Lecce (Italy)

    2016-03-14

    We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

  2. Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

    International Nuclear Information System (INIS)

    Pousset, J.; Farella, I.; Cola, A.; Gambino, S.

    2016-01-01

    We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

  3. Femtosecond transient absorption spectroscopy of silanized silicon quantum dots

    Science.gov (United States)

    Kuntermann, Volker; Cimpean, Carla; Brehm, Georg; Sauer, Guido; Kryschi, Carola; Wiggers, Hartmut

    2008-03-01

    Excitonic properties of colloidal silicon quantum dots (Si qdots) with mean sizes of 4nm were examined using stationary and time-resolved optical spectroscopy. Chemically stable silicon oxide shells were prepared by controlled surface oxidation and silanization of HF-etched Si qdots. The ultrafast relaxation dynamics of photogenerated excitons in Si qdot colloids were studied on the picosecond time scale from 0.3psto2.3ns using femtosecond-resolved transient absorption spectroscopy. The time evolution of the transient absorption spectra of the Si qdots excited with a 150fs pump pulse at 390nm was observed to consist of decays of various absorption transitions of photoexcited electrons in the conduction band which overlap with both the photoluminescence and the photobleaching of the valence band population density. Gaussian deconvolution of the spectroscopic data allowed for disentangling various carrier relaxation processes involving electron-phonon and phonon-phonon scatterings or arising from surface-state trapping. The initial energy and momentum relaxation of hot carriers was observed to take place via scattering by optical phonons within 0.6ps . Exciton capturing by surface states forming shallow traps in the amorphous SiOx shell was found to occur with a time constant of 4ps , whereas deeper traps presumably localized in the Si-SiOx interface gave rise to exciton trapping processes with time constants of 110 and 180ps . Electron transfer from initially populated, higher-lying surface states to the conduction band of Si qdots (>2nm) was observed to take place within 400 or 700fs .

  4. Large lattice relaxation deep levels in neutron-irradiated GaN

    International Nuclear Information System (INIS)

    Li, S.; Zhang, J.D.; Beling, C.D.; Wang, K.; Wang, R.X.; Gong, M.; Sarkar, C.K.

    2005-01-01

    Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) measurements have been carried out in neutron-irradiated n-type hydride-vapor-phase-epitaxy-grown GaN. A defect center characterized by a DLTS line, labeled as N1, is observed at E C -E T =0.17 eV. Another line, labeled as N2, at E C -E T =0.23 eV, seems to be induced at the same rate as N1 under irradiation and may be identified with E1. Other defects native to wurtzite GaN such as the C and E2 lines appear to enhance under neutron irradiation. The DLOS results show that the defects N1 and N2 have large Frank-Condon shifts of 0.64 and 0.67 eV, respectively, and hence large lattice relaxations. The as-grown and neutron-irradiated samples all exhibit the persistent photoconductivity effect commonly seen in GaN that may be attributed to DX centers. The concentration of the DX centers increases significantly with neutron dosage and is helpful in sustaining sample conductivity at low temperatures, thus making possible DLTS measurements on N1 an N2 in the radiation-induced deep-donor defect compensated material which otherwise are prevented by carrier freeze-out

  5. Special issue on the spectroscopy of transient plasmas

    Science.gov (United States)

    Bailey, James; Hoarty, David; Mancini, Roberto; Yoneda, Hitoki

    2015-01-01

    Experimental and theoretical papers are invited for a special issue of Journal of Physics B: Atomic, Molecular and Optical Physics on Spectroscopy of Transient Plasmas, covering plasma conditions produced by pulsed laboratory sources including for example, short and long pulse lasers; pulsed power devices; FELs; XFELs and ion beams. The full range of plasma spectroscopy from the optical range up to high energy bremsstrahlung radiation will be covered. The deadline for submitting to this special issue is 1 March 2015. (Expected web publication: autumn 2015). Late submissions will be considered for the journal, but may not be included in the special issue. All submitted articles will be fully refereed to the journal's usual high standards. Upon publication, the issue will be widely promoted to the atomic, molecular and optical physics community, ensuring that your work receives maximum visibility. Articles should be submitted at http://mc04.manuscriptcentral.com/jphysb-iop. Should you have any questions regarding the preparation of manuscripts or the suitability of your work for this Issue, please do not hesitate to contact the J. Phys. B: At. Mol. Opt. Editorial team (jphysb@iop.org). We look forward to hearing from you and hope that we can welcome you as a contributing author.

  6. Deep-ultraviolet cavity ringdown spectroscopy

    NARCIS (Netherlands)

    Sneep, M.C.; Hannemann, S.; van Duijn, E.J.; Ubachs, W.M.G.

    2004-01-01

    The sensitive optical detection technique of cavity ringdown spectroscopy is extended to the wavelength range 197-204 nm. A novel design narrowband Fourier-transform-limited laser is used, and the technique is applied to gas-phase extinction measurements in CO

  7. Nuclear level mixing resonance spectroscopy

    International Nuclear Information System (INIS)

    Coussement, R.; Put, P.; Scheveneels, G.; Hardeman, F.

    1985-01-01

    The existent methods for measuring quadrupole interactions are not suited to nuclei with lifetimes in the micro-seconds to minutes region. AD/NQR, a possible candidate in this lifetime gap, has not yet succeeded in overcoming its predicted difficulties. A new resonant method, recently developed and based on the principles of level mixing (cfr atomic spectroscopy) covers this less accessible lifetime range. Many other kinds of resonances can be described according to the level mixing formalism. The particular example of NMR as a level mixing resonance (LMR) is discussed. The underlying theory of LMR and its important consequences, leading to some interesting features of the method, is briefly formulated. Two successfully performed measurements demonstrate the feasibility and the predicted characteristics of this new promising method. (orig.)

  8. Investigation of photoelectronic processes in CdIn2S4 by photoinduced current transient spectroscopy

    International Nuclear Information System (INIS)

    Serpi, A.

    1986-01-01

    Photoelectronic processes in CdIn 2 S 4 are investigated by four-gate photoinduced current transient spectroscopy. In general the photocurrent decay transients are non-exponential because of a nonlinear multichannel recombination mechanism. Nevertheless suitable extrinsic excitation allows to open one recombination channel only and so to evidence a purely exponential relaxation. The detailed analysis of this process leads to the interpretation that the defects associated with the energy levels continuously distributed below the conduction band act as relay centres for radiative recombination of photoelectrons rather than as thermal emitting traps. An electron trapping level located at about 0.6 eV from the bottom of the conduction band is also evidenced. (author)

  9. Implementation of Deep Ultraviolet Raman Spectroscopy

    DEFF Research Database (Denmark)

    Liu, Chuan

    of the aromatics, Toluene and Naphthalene, in the gasoline. Chapter 6 shows examples of other applications of DUV Raman spectroscopy, for instance for the illegal red food additive: Sudan I. For this dye Raman spectra - useful to indicate an unwanted presence - could not be obtained with green or blue laser line...... Raman spectrometry was further applied to detect another illegal food additive, Melamine, in milk sample. It was shown that the DUV constitutes a more sensitive measurement method than traditional Raman spectrometry and realizes a direct detection in liquid milk. In another research field regarding...... spectra of the gasoline samples. It is virtually unimportant what the rest of the sample consisted of. The most intense characteristic band is located at 1381 cm-1. The Raman spectra of home-made artificial gasoline mixtures - with gradually increasing Naphthalene contents - can be used to determine...

  10. The role of deep level traps in barrier height of 4H-SiC Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Zaremba, G., E-mail: gzaremba@ite.waw.pl [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Adamus, Z. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Jung, W.; Kaminska, E.; Borysiewicz, M.A.; Korwin-Mikke, K. [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

    2012-09-01

    This paper presents a discussion about the influence of deep level defects on the height of Ni-Si based Schottky barriers to 4H-SiC. The defects were characterized by deep level transient spectroscopy (DLTS) in a wide range of temperatures (78-750 K). The numerical simulation of barrier height value as a function of dominant defect concentration was carried out to estimate concentration, necessary to 'pin' Fermi level and thus significantly influence the barrier height. From comparison of the results of simulation with barrier height values obtained by capacitance-voltage (C-V) measurements it seems that dominant defect in measured concentration has a very small impact on the barrier height and on the increase of reverse current.

  11. Inductively coupled plasma induced deep levels in epitaxial n-GaAs

    International Nuclear Information System (INIS)

    Auret, F.D.; Janse van Rensburg, P.J.; Meyer, W.E.; Coelho, S.M.M.; Kolkovsky, Vl.; Botha, J.R.; Nyamhere, C.; Venter, A.

    2012-01-01

    The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent electron traps (E c —0.046 eV, E c —0.186 eV, E c —0.314 eV. E c —0.528 eV and E c —0.605 eV) were detected. The metastable defect E c —0.046 eV having a trap signature similar to E1 is observed for the first time. E c —0.314 eV and E c —0.605 eV are metastable and appear to be similar to the M3 and M4 defects present in dc H-plasma exposed GaAs.

  12. Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

    International Nuclear Information System (INIS)

    Kwak, D.W.; Lee, D.W.; Oh, J.S.; Lee, Y.H.; Cho, H.Y.

    2012-01-01

    SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10 −17 cm 2 , two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10 −14 cm 2 and 0.96 × 10 −15 cm 2 , respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H + ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers. - Highlights: ► We have fabricated low-defective SiGe-on-Insulator (SGOI) with implantation method. ► H + and He + -ions are used for ion-implantation method. ► We have investigated the deep level defects of SGOI layers. ► Ge condensation method using H + ion implantation could reduce extended defects. ► They could enhance electrical properties.

  13. Deep levels in p-type InGaAsN lattice matched to GaAs

    International Nuclear Information System (INIS)

    Kwon, D.; Kaplar, R.J.; Ringel, S.A.; Allerman, A.A.; Kurtz, S.R.; Jones, E.D.

    1999-01-01

    Deep-level transient spectroscopy measurements were utilized to investigate deep-level defects in metal - organic chemical vapor deposition-grown, unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the band gap, with a dominant hole trap at E v +0.10eV. Postgrowth annealing simplified the deep-level spectra, enabling the identification of three distinct hole traps at 0.10, 0.23, and 0.48 eV above the valence-band edge, with concentrations of 3.5x10 14 , 3.8x10 14 , and 8.2x10 14 cm -3 , respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4x10 14 cm -3 in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority-carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future. copyright 1999 American Institute of Physics

  14. Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy

    KAUST Repository

    Sun, Jingya; Yang, Yang; Khan, Jafar I.; Alarousu, Erkki; Guo, Zaibing; Zhang, Xixiang; Zhang, Qiang; Mohammed, Omar F.

    2014-01-01

    We explored for the first time the ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium dioxide was successfully doped layer-by-layer with two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that the carrier trapping time decreases progressively as the doping concentration increases. A global-fitting procedure for the carrier trapping suggests the appearance of two time components: a fast one that is directly associated with carrier trapping to the defect state in the vicinity of the conduction band and a slow one that is attributed to carrier trapping to the deep-level state from the conduction band. With a relatively long doping deposition time on the order of 30 s, a carrier lifetime of about 1 ps is obtained. To confirm that the measured ultrafast carrier dynamics are associated with electron trapping by metal doping, we explored the carrier dynamics of undoped TiO2. The findings reported here may be useful for the implementation of high-speed optoelectronic applications and fast switching devices.

  15. Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy

    KAUST Repository

    Sun, Jingya

    2014-06-11

    We explored for the first time the ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium dioxide was successfully doped layer-by-layer with two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that the carrier trapping time decreases progressively as the doping concentration increases. A global-fitting procedure for the carrier trapping suggests the appearance of two time components: a fast one that is directly associated with carrier trapping to the defect state in the vicinity of the conduction band and a slow one that is attributed to carrier trapping to the deep-level state from the conduction band. With a relatively long doping deposition time on the order of 30 s, a carrier lifetime of about 1 ps is obtained. To confirm that the measured ultrafast carrier dynamics are associated with electron trapping by metal doping, we explored the carrier dynamics of undoped TiO2. The findings reported here may be useful for the implementation of high-speed optoelectronic applications and fast switching devices.

  16. Deep Ocean Contribution to Sea Level Rise

    Science.gov (United States)

    Chang, L.; Sun, W.; Tang, H.; Wang, Q.

    2017-12-01

    The ocean temperature and salinity change in the upper 2000m can be detected by Argo floats, so we can know the steric height change of the ocean. But the ocean layers above 2000m represent only 50% of the total ocean volume. Although the temperature and salinity change are small compared to the upper ocean, the deep ocean contribution to sea level might be significant because of its large volume. There has been some research on the deep ocean rely on the very sparse situ observation and are limited to decadal and longer-term rates of change. The available observational data in the deep ocean are too spares to determine the temporal variability, and the long-term changes may have a bias. We will use the Argo date and combine the situ data and topographic data to estimate the temperature and salinity of the sea water below 2000m, so we can obtain a monthly data. We will analyze the seasonal and annual change of the steric height change due to the deep ocean between 2005 and 2016. And we will evaluate the result combination the present-day satellite and in situ observing systems. The deep ocean contribution can be inferred indirectly as the difference between the altimetry minus GRACE and Argo-based steric sea level.

  17. Identification of deep levels in GaN associated with dislocations

    International Nuclear Information System (INIS)

    Soh, C B; Chua, S J; Lim, H F; Chi, D Z; Liu, W; Tripathy, S

    2004-01-01

    To establish a correlation between dislocations and deep levels in GaN, a deep-level transient spectroscopy study has been carried out on GaN samples grown by metalorganic chemical vapour deposition. In addition to typical undoped and Si-doped GaN samples, high-quality crack-free undoped GaN film grown intentionally on heavily doped cracked Si-doped GaN and cracked AlGaN templates are also chosen for this study. The purpose of growth of such continuous GaN layers on top of the cracked templates is to reduce the screw dislocation density by an order of magnitude. Deep levels in these layers have been characterized and compared with emphasis on their thermal stabilities and capture kinetics. Three electron traps at E c -E T ∼0.10-0.11, 0.24-0.27 and 0.59-0.63 eV are detected common to all the samples while additional levels at E c -E T ∼0.18 and 0.37-0.40 eV are also observed in the Si-doped GaN. The trap levels exhibit considerably different stabilities under rapid thermal annealing. Based on the observations, the trap levels at E c -E T ∼0.18 and 0.24-0.27 eV can be associated with screw dislocations, whereas the level at E c -E T ∼0.59-0.63 eV can be associated with edge dislocations. This is also in agreement with the transmission electron microscopy measurements conducted on the GaN samples

  18. Deep-HiTS: Rotation Invariant Convolutional Neural Network for Transient Detection

    Science.gov (United States)

    Cabrera-Vives, Guillermo; Reyes, Ignacio; Förster, Francisco; Estévez, Pablo A.; Maureira, Juan-Carlos

    2017-02-01

    We introduce Deep-HiTS, a rotation-invariant convolutional neural network (CNN) model for classifying images of transient candidates into artifacts or real sources for the High cadence Transient Survey (HiTS). CNNs have the advantage of learning the features automatically from the data while achieving high performance. We compare our CNN model against a feature engineering approach using random forests (RFs). We show that our CNN significantly outperforms the RF model, reducing the error by almost half. Furthermore, for a fixed number of approximately 2000 allowed false transient candidates per night, we are able to reduce the misclassified real transients by approximately one-fifth. To the best of our knowledge, this is the first time CNNs have been used to detect astronomical transient events. Our approach will be very useful when processing images from next generation instruments such as the Large Synoptic Survey Telescope. We have made all our code and data available to the community for the sake of allowing further developments and comparisons at https://github.com/guille-c/Deep-HiTS. Deep-HiTS is licensed under the terms of the GNU General Public License v3.0.

  19. Self Referencing Heterodyne Transient Grating Spectroscopy with Short Wavelength

    Directory of Open Access Journals (Sweden)

    Jakob Grilj

    2015-04-01

    Full Text Available Heterodyning by a phase stable reference electric field is a well known technique to amplify weak nonlinear signals. For short wavelength, the generation of a reference field in front of the sample is challenging because of a lack of suitable beamsplitters. Here, we use a permanent grating which matches the line spacing of the transient grating for the creation of a phase stable reference field. The relative phase among the two can be changed by a relative translation of the permanent and transient gratings in direction orthogonal to the grating lines. We demonstrate the technique for a transient grating on a VO2 thin film and observe constructive as well as destructive interference signals.

  20. Interpretation of transconductance dispersion in AlGaAs/InGaAs pseudomorphic high electron mobility transistor by capacitance deep level transient spectroscopy

    CERN Document Server

    Choi, K J; Yoo, H M; Lee, G Y

    1998-01-01

    The transconductance dispersion in AlGaAs/InGaAs PHEMT grown by MBE was interpreted by means of capacitance DLTS technique. When the gate bias was -0.2 V, the transconductance decreased at a very broad frequency range of 5.5 Hz -1.7x10 sup 4 Hz. However, when a positive bias was applied to the gate, the transconductance increased at a low frequency range and then decreased at a high frequency range. In the transconductance dispersion measurement as a function of temperature, the transition frequency shifted to higher frequency region with the increase in temperature. The emission energy for the change in the transition frequency was determined to be 0.394 eV from the temperature dependency of the transition frequency. In the capacitance DLTS measurements, we observed DX-center with thermal activation energy of 0.420 eV and two hole trap-like signals. The DX-center peak decreased as the filling pulse decreased from +0.6 V and disappeared at the bias of -0.1 V. Comparing the activation energy of DX-center in DL...

  1. Charge deep level transient spectroscopy study of 3 - 7 MeV/amu ion and fast neutron irradiation-induced changes in MOS structures

    International Nuclear Information System (INIS)

    Stano, J.; Skuratov, V.A.; Ziska, M.

    2001-01-01

    Radiation-induced changes in MOS capacitor structures irradiated with Bi (710 MeV), Kr (245 MeV), Ar (280, 155 MeV) ions and fast neutrons (E > 0.1 MeV) have been studied in view of Q-DLTS and C-V techniques. As was found, high energy ion and neutron irradiation enhance the induction of positive charge density in the oxide layer of MOS samples. The number of electrically active defects in this layer strongly decreases under dense electronic excitations. No dependence of vacancy-oxygen center concentration in silicon substrate normalized per number of displaced atoms by nuclear elastic collisions on projectile type have been observed

  2. Millimeterwave spectroscopy of transient molecules produced in a ...

    Indian Academy of Sciences (India)

    The construction of a millimeterwave spectrometer to study the pure rotational spectra of transient molecules in the gas phase is presented. The spectrometer is a source-modulated system combined with a free space glass discharge cell. Millimeterwave radiation has been produced using a frequency multiplier, the ...

  3. Femtosecond time-resolved transient absorption spectroscopy of xanthophylls

    Czech Academy of Sciences Publication Activity Database

    Niedzwiedzki, D.; Sullivan, J.O.; Polívka, Tomáš; Birge, R.R.; Frank, H.A.

    2006-01-01

    Roč. 110, č. 45 (2006), s. 22872-22885 ISSN 1520-6106 Institutional research plan: CEZ:AV0Z50510513 Keywords : xanthophyll * spectroscopy study Subject RIV: BO - Biophysics Impact factor: 4.115, year: 2006

  4. Deep Inelastic Scattering at the Amplitude Level

    International Nuclear Information System (INIS)

    Brodsky, Stanley J.

    2005-01-01

    The deep inelastic lepton scattering and deeply virtual Compton scattering cross sections can be interpreted in terms of the fundamental wavefunctions defined by the light-front Fock expansion, thus allowing tests of QCD at the amplitude level. The AdS/CFT correspondence between gauge theory and string theory provides remarkable new insights into QCD, including a model for hadronic wavefunctions which display conformal scaling at short distances and color confinement at large distances

  5. Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E2

    International Nuclear Information System (INIS)

    Chen, X.D.; Fung, S.; Beling, C.D.; Lui, M.K.; Ling, C.C.; Yang, C.L.; Ge, W.K.; Wang, J.N.; Gong, M.

    2004-01-01

    N-type 6H-SiC samples irradiated with electrons having energies of E e =0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E e ≥0.3 MeV, deep levels ED1, E 1 /E 2 , and E i appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E 1 /E 2 , as well as ED1 and E i , involves the displacement of the C atom in the SiC lattice

  6. Applications of core level spectroscopy to adsorbates

    International Nuclear Information System (INIS)

    Nilsson, Anders

    2002-01-01

    In the following review different applications of core-level spectroscopy to atomic and molecular adsorbates will be shown. Core-holes are created through core-level ionization and X-ray absorption processes and the core-hole decays by radiant and non-radiant processes. This forms the basis for X-ray photoelectron spectroscopy, X-ray absorption spectroscopy, Auger electron spectroscopy and X-ray emission spectroscopy. We will demonstrate how we can use the different methods to obtain information about the chemical state, local geometric structure, nature of chemical bonding and dynamics in electron transfer processes. The adsorption of N 2 and CO on Ni(100) will be used as prototype systems for chemisorption while N 2 on graphite and Ar on Pt for physisorption

  7. Spontaneous Ca2+ transients in interstitial cells of Cajal located within the deep muscular plexus of the murine small intestine

    Science.gov (United States)

    Baker, Salah A.; Drumm, Bernard T.; Saur, Dieter; Hennig, Grant W.; Ward, Sean M.

    2016-01-01

    Key points Interstitial cells of Cajal at the level of the deep muscular plexus (ICC‐DMP) in the small intestine generate spontaneous Ca2+ transients that consist of localized Ca2+ events and limited propagating Ca2+ waves.Ca2+ transients in ICC‐DMP display variable characteristics: from discrete, highly localized Ca2+ transients to regionalized Ca2+ waves with variable rates of occurrence, amplitude, duration and spatial spread.Ca2+ transients fired stochastically, with no cellular or multicellular rhythmic activity being observed. No correlation was found between the firing sites in adjacent cells.Ca2+ transients in ICC‐DMP are suppressed by the ongoing release of inhibitory neurotransmitter(s).Functional intracellular Ca2+ stores are essential for spontaneous Ca2+ transients, and the sarco/endoplasmic reticulum Ca2+‐ATPase (SERCA) pump is necessary for maintenance of spontaneity.Ca2+ release mechanisms involve both ryanodine receptors (RyRs) and inositol triphosphate receptors (InsP3Rs). Release from these channels is interdependent.ICC express transcripts of multiple RyRs and InsP3Rs, with Itpr1 and Ryr2 subtypes displaying the highest expression. Abstract Interstitial cells of Cajal in the deep muscular plexus of the small intestine (ICC‐DMP) are closely associated with varicosities of enteric motor neurons and generate responses contributing to neural regulation of intestinal motility. Responses of ICC‐DMP are mediated by activation of Ca2+‐activated Cl− channels; thus, Ca2+ signalling is central to the behaviours of these cells. Confocal imaging was used to characterize the nature and mechanisms of Ca2+ transients in ICC‐DMP within intact jejunal muscles expressing a genetically encoded Ca2+ indicator (GCaMP3) selectively in ICC. ICC‐DMP displayed spontaneous Ca2+ transients that ranged from discrete, localized events to waves that propagated over variable distances. The occurrence of Ca2+ transients was highly variable, and it was

  8. Spontaneous Ca(2+) transients in interstitial cells of Cajal located within the deep muscular plexus of the murine small intestine.

    Science.gov (United States)

    Baker, Salah A; Drumm, Bernard T; Saur, Dieter; Hennig, Grant W; Ward, Sean M; Sanders, Kenton M

    2016-06-15

    Interstitial cells of Cajal at the level of the deep muscular plexus (ICC-DMP) in the small intestine generate spontaneous Ca(2+) transients that consist of localized Ca(2+) events and limited propagating Ca(2+) waves. Ca(2+) transients in ICC-DMP display variable characteristics: from discrete, highly localized Ca(2+) transients to regionalized Ca(2+) waves with variable rates of occurrence, amplitude, duration and spatial spread. Ca(2+) transients fired stochastically, with no cellular or multicellular rhythmic activity being observed. No correlation was found between the firing sites in adjacent cells. Ca(2+) transients in ICC-DMP are suppressed by the ongoing release of inhibitory neurotransmitter(s). Functional intracellular Ca(2+) stores are essential for spontaneous Ca(2+) transients, and the sarco/endoplasmic reticulum Ca(2+) -ATPase (SERCA) pump is necessary for maintenance of spontaneity. Ca(2+) release mechanisms involve both ryanodine receptors (RyRs) and inositol triphosphate receptors (InsP3 Rs). Release from these channels is interdependent. ICC express transcripts of multiple RyRs and InsP3 Rs, with Itpr1 and Ryr2 subtypes displaying the highest expression. Interstitial cells of Cajal in the deep muscular plexus of the small intestine (ICC-DMP) are closely associated with varicosities of enteric motor neurons and generate responses contributing to neural regulation of intestinal motility. Responses of ICC-DMP are mediated by activation of Ca(2+) -activated Cl(-) channels; thus, Ca(2+) signalling is central to the behaviours of these cells. Confocal imaging was used to characterize the nature and mechanisms of Ca(2+) transients in ICC-DMP within intact jejunal muscles expressing a genetically encoded Ca(2+) indicator (GCaMP3) selectively in ICC. ICC-DMP displayed spontaneous Ca(2+) transients that ranged from discrete, localized events to waves that propagated over variable distances. The occurrence of Ca(2+) transients was highly variable, and it

  9. Transient grating spectroscopy in photosynthetic purple bacteria Rhodobacter sphaeroides 2.4.1

    Energy Technology Data Exchange (ETDEWEB)

    Sugisaki, Mitsuru, E-mail: mitsuru@sci.osaka-cu.ac.j [CREST-JST and Graduate School of Science, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585 (Japan); Fujiwara, Masazumi; Fujii, Ritsuko [CREST-JST and Graduate School of Science, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585 (Japan); Nakagawa, Katsunori; Nango, Mamoru [CREST-JST and Graduate School of Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan); Cogdell, Richard J. [Glasgow Biomedical Research Centre, IBLS, University of Glasgow, 126 University Place, Glasgow G12 8TA, Scotland (United Kingdom); Hashimoto, Hideki [CREST-JST and Graduate School of Science, Osaka City University, 3-3-138 Sugimoto, Sumiyoshi, Osaka 558-8585 (Japan)

    2009-12-15

    The vibronic coherence of photosynthetic pigment-protein complexes has been investigated by means of transient grating spectroscopy using sub 20 fs optical pulses. In the present work, we focus our attention on the LH2 antenna complexes from Rhodobacter sphaeroides 2.4.1 because the information about their structure investigated by the electron and atomic force microscopy is available and the electric levels of pigments are well resolved, resulting in clear absorption spectrum. The vibronic coherent oscillations with a period of a few tens of femtoseconds have been clearly observed. We found that the temporal change of the coherent oscillations reflects the vibrational relaxation in the ground state. Calculations based on the Brownian oscillator model were performed under the impulsive excitation limit. The spectral density has been determined from the Raman measurement of spheroidene. Good agreement between the calculation and the experimental results has been achieved in the linear absorption spectrum and transient grating signal, which strongly supports the validity of our model.

  10. Positron beam studies of transients in semiconductors

    International Nuclear Information System (INIS)

    Beling, C.D.; Ling, C.C.; Cheung, C.K.; Naik, P.S.; Zhang, J.D.; Fung, S.

    2006-01-01

    Vacancy-sensing positron deep level transient spectroscopy (PDLTS) is a positron beam-based technique that seeks to provide information on the electronic ionization levels of vacancy defects probed by the positron through the monitoring of thermal transients. The experimental discoveries leading to the concept of vacancy-sensing PDLTS are first reviewed. The major problem associated with this technique is discussed, namely the strong electric fields establish in the near surface region of the sample during the thermal transient which tend to sweep positrons into the contact with negligible defect trapping. New simulations are presented which suggest that under certain conditions a sufficient fraction of positrons may be trapped into ionizing defects rendering PDLTS technique workable. Some suggestions are made for techniques that might avoid the problematic electric field problem, such as optical-PDLTS where deep levels are populated using light and the use of high forward bias currents for trap filling

  11. Microseism Induced by Transient Release of In Situ Stress During Deep Rock Mass Excavation by Blasting

    Science.gov (United States)

    Yang, Jianhua; Lu, Wenbo; Chen, Ming; Yan, Peng; Zhou, Chuangbing

    2013-07-01

    During deep rock mass excavation with the method of drill and blast, accompanying the secession of rock fragments and the formation of a new free surface, in situ stress on this boundary is suddenly released within several milliseconds, which is termed the transient release of in situ stress. In this process, enormous strain energy around the excavation face is instantly released in the form of kinetic energy and it inevitably induces microseismic events in surrounding rock masses. Thus, blasting excavation-induced microseismic vibrations in high-stress rock masses are attributed to the combined action of explosion and the transient release of in situ stress. The intensity of stress release-induced microseisms, which depends mainly on the magnitude of the in situ stress and the dimension of the excavation face, is comparable to that of explosion-induced vibrations. With the methods of time-energy density analysis, amplitude spectrum analysis, and finite impulse response (FIR) digital filter, microseismic vibrations induced by the transient release of in situ stress were identified and separated from recorded microseismic signals during a blast of deep rock masses in the Pubugou Hydropower Station. The results show that the low-frequency component in the microseismic records results mainly from the transient release of in situ stress, while the high-frequency component originates primarily from explosion. In addition, a numerical simulation was conducted to demonstrate the occurrence of microseismic events by the transient release of in situ stress, and the results seem to have confirmed fairly well the separated vibrations from microseismic records.

  12. UNUSUAL LONG AND LUMINOUS OPTICAL TRANSIENT IN THE SUBARU DEEP FIELD

    International Nuclear Information System (INIS)

    Urata, Yuji; Tsai, Patrick P.; Huang, Kuiyun; Morokuma, Tomoki; Motohara, Kentaro; Yasuda, Naoki; Tanaka, Masaomi; Hayashi, Masao; Kashikawa, Nobunari; Ly, Chun; Malkan, Matthew A.

    2012-01-01

    We present observations of SDF-05M05, an unusual optical transient discovered in the Subaru Deep Field (SDF). The duration of the transient is > ∼ 800 days in the observer frame, and the maximum brightness during observation reached approximately 23 mag in the i' and z' bands. The faint host galaxy is clearly identified in all five optical bands of the deep SDF images. The photometric redshift of the host yields z ∼ 0.6 and the corresponding absolute magnitude at maximum is ∼ – 20. This implies that this event shone with an absolute magnitude brighter than –19 mag for approximately 300 days in the rest frame, which is significantly longer than a typical supernova and ultraluminous supernova. The total radiated energy during our observation was 1 × 10 51 erg. The light curves and color evolution are marginally consistent with some luminous IIn supernovae. We suggest that the transient may be a unique and peculiar supernova at intermediate redshift.

  13. UNUSUAL LONG AND LUMINOUS OPTICAL TRANSIENT IN THE SUBARU DEEP FIELD

    Energy Technology Data Exchange (ETDEWEB)

    Urata, Yuji; Tsai, Patrick P. [Institute of Astronomy, National Central University, Chung-Li 32054, Taiwan (China); Huang, Kuiyun [Academia Sinica Institute of Astronomy and Astrophysics, Taipei 106, Taiwan (China); Morokuma, Tomoki; Motohara, Kentaro [Institute of Astronomy, Graduate School of Science, University of Tokyo, Mitaka, Tokyo 181-0015 (Japan); Yasuda, Naoki [Institute for the Physics and Mathematics of the Universe, University of Tokyo, Kashiwa 277-8568 (Japan); Tanaka, Masaomi; Hayashi, Masao; Kashikawa, Nobunari [Optical and Infrared Astronomy Division, National Astronomical Observatory, Mitaka, Tokyo 181-8588 (Japan); Ly, Chun [Space Telescope Science Institute, Baltimore, MD (United States); Malkan, Matthew A., E-mail: urata@astro.ncu.edu.tw [Department of Physics and Astronomy, UCLA, Box 951547, Los Angeles, CA (United States)

    2012-11-20

    We present observations of SDF-05M05, an unusual optical transient discovered in the Subaru Deep Field (SDF). The duration of the transient is > {approx} 800 days in the observer frame, and the maximum brightness during observation reached approximately 23 mag in the i' and z' bands. The faint host galaxy is clearly identified in all five optical bands of the deep SDF images. The photometric redshift of the host yields z {approx} 0.6 and the corresponding absolute magnitude at maximum is {approx} - 20. This implies that this event shone with an absolute magnitude brighter than -19 mag for approximately 300 days in the rest frame, which is significantly longer than a typical supernova and ultraluminous supernova. The total radiated energy during our observation was 1 Multiplication-Sign 10{sup 51} erg. The light curves and color evolution are marginally consistent with some luminous IIn supernovae. We suggest that the transient may be a unique and peculiar supernova at intermediate redshift.

  14. Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors

    Science.gov (United States)

    Wang, Chong; Simoen, Eddy; Zhao, Ming; Li, Wei

    2017-10-01

    Deep levels formed under different growth conditions of a 200 nm AlN buffer layer on B-doped Czochralski Si(111) substrates with different resistivity were investigated by deep-level transient spectroscopy (DLTS) on metal-insulator-semiconductor capacitors. Growth-temperature-dependent Al diffusion in the Si substrate was derived from the free carrier density obtained by capacitance-voltage measurement on samples grown on p- substrates. The DLTS spectra revealed a high concentration of point and extended defects in the p- and p+ silicon substrates, respectively. This indicated a difference in the electrically active defects in the silicon substrate close to the AlN/Si interface, depending on the B doping concentration.

  15. Transient behaviour of deep underground salt caverns; Comportement transitoire des cavites salines profondes

    Energy Technology Data Exchange (ETDEWEB)

    Karimi-Jafari, M

    2007-11-15

    This work deals with the transient behaviour of deep underground salt caverns. It has been shown that a cavern is a complex system, in which there are mechanical, thermal, chemical and hydraulic evolutions. The importance of the transient evolutions, particularly the role of the 'reverse' creep in the interpretation of the tightness test in a salt cavern is revealed. Creep is characterized by a formulation of the behaviour law which presents the advantage, in a practical point of view, to only have a reduced number of parameters while accounting of the essential of what it is observed. The initiation of the rupture in the effective traction in a salt cavern rapidly pressurized is discussed. A model fitted to a very long term behaviour (after abandonment) is developed too. In this case too, a lot of phenomena, more or less coupled, occur, when the existing literature took only into account some phenomena. (O.M.)

  16. The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC

    Science.gov (United States)

    Alfieri, G.; Knoll, L.; Kranz, L.; Sundaramoorthy, V.

    2018-05-01

    High-purity semi-insulating 4H-SiC can find a variety of applications, ranging from power electronics to quantum computing applications. However, data on the electronic properties of deep levels in this material are scarce. For this reason, we present a deep level transient spectroscopy study on HPSI 4H-SiC substrates, both as-grown and irradiated with low-energy electrons (to displace only C-atoms). Our investigation reveals the presence of four deep levels with activation energies in the 0.4-0.9 eV range. The concentrations of three of these levels increase by at least one order of magnitude after irradiation. Furthermore, we analyzed the behavior of these traps under sub- and above-band gap illumination. The nature of the traps is discussed in the light of the present data and results reported in the literature.

  17. Behavior of deep level defects on voltage-induced stress of Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lee, D.W.; Cho, S.E. [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of); Jeong, J.H. [Solar Cell Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of)

    2015-05-01

    The behavior of deep level defects by a voltage-induced stress for CuInGaSe{sub 2} (CIGS) solar cells has been investigated. CIGS solar cells were used with standard structures which are Al-doped ZnO/i-ZnO/CdS/CIGSe{sub 2}/Mo on soda lime glass, and that resulted in conversion efficiencies as high as 16%. The samples with the same structure were isothermally stressed at 100 °C under the reverse voltages. The voltage-induced stressing in CIGS samples causes a decrease in the carrier density and conversion efficiency. To investigate the behavior of deep level defects in the stressed CIGS cells, photo-induced current transient spectroscopy was utilized, and normally 3 deep level defects (including 2 hole traps and 1 electron trap) were found to be located at 0.18 eV and 0.29 eV above the valence band maximum (and 0.36 eV below the conduction band). In voltage-induced cells, especially, it was found that the decrease of the hole carrier density could be responsible for the increase of the 0.29 eV defect, which is known to be observed in less efficient CIGS solar cells. And the carrier density and the defects are reversible at least to a large extent by resting at room-temperature without the bias voltage. From optical capture kinetics in photo-induced current transient spectroscopy measurement, the types of defects could be distinguished into the isolated point defect and the extended defect. In this work, it is suggested that the increase of the 0.29 eV defect by voltage-induced stress could be due to electrical activation accompanied by a loss of positive ion species and the activated defect gives rise to reduction of the carrier density. - Highlights: • We investigated behavior of deep level defects by voltage-induced stress. • Defect generation could affect the decrease of the conversion efficiency of cells. • Defect generation could be electrically activated by a loss of positive ion species. • Type of defects could be studied with models of point defects

  18. Infrared laser transient absorption spectroscopy of the ethyl radical

    International Nuclear Information System (INIS)

    Sears, T.J.; Johnson, P.M.; Jin, P.; Oatis, S.

    1996-01-01

    The observation and analysis of the high resolution spectrum of the CH 2 rocking fundamental of the ethyl radical, C 2 H 5 , at wavelengths close to 18.9 μm is reported. The band origin is found to be at 528.1 cm -1 . The spectrum shows evidence for a very low barrier to internal rotation, or torsion, in this species. A simple model Hamiltonian, based on an assumed structure with G 12 symmetry, qualitatively reproduces the observations and implies a torsional barrier of approximately 20 cm -1 in both the zero point and excited vibrational states. The Hamiltonian cannot reproduce the observations to the level of the experimental accuracy and the importance of several neglected terms is tested and discussed. The observed torsional splittings imply that, within the confines of the model, the a-inertial and internal rotation axes in the molecule are coincident to within 1 degree. In addition to their intrinsic interest, the spectra will be useful for future state resolved studies of the kinetics of chemical reactions involving the radical. copyright 1996 American Institute of Physics

  19. Ultrafast carrier dynamics of titanic acid nanotubes investigated by transient absorption spectroscopy.

    Science.gov (United States)

    Wang, Li; Zhao, Hui; Pan, Lin Yun; Weng, Yu Xiang; Nakato, Yoshihiro; Tamai, Naoto

    2010-12-01

    Carrier dynamics of titanic acid nanotubes (phase of H2Ti2O5.H2O) deposited on a quartz plate was examined by visible/near-IR transient absorption spectroscopy with an ultraviolet excitation. The carrier dynamics of titanic acid nanotubes follows the fast trapping process which attributed to the intrinsic tubular structure, the relaxation of shallow trapped carriers and the recombination as a second-order kinetic process. Transient absorption of titanic acid nanotubes was dominated by the absorption of surface-trapped holes in visible region around 500 nm, which was proved by the faster decay dynamics in the presence of polyvinyl alcohol as a hole-scavenger. However, the slow relaxation of free carriers was much more pronounced in the TiO2 single crystals, as compared with the transient absorption spectra of titanic acid nanotubes under the similar excitation.

  20. Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

    International Nuclear Information System (INIS)

    Nyamhere, C.; Botha, J.R.; Venter, A.

    2011-01-01

    Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E C -0.33 eV, E C -0.36 eV, E C -0.38 eV and E C -0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E C -0.58 eV. Isochronal annealing of the passivated material between 50 and 300 o C, revealed the emergence of a secondary defect, not previously observed, at E C -0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 o C, as all the defects originally observed in the reference sample were recovered.

  1. Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Nyamhere, C., E-mail: s210239522@live.nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Botha, J.R.; Venter, A. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2011-05-15

    Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E{sub C}-0.33 eV, E{sub C}-0.36 eV, E{sub C}-0.38 eV and E{sub C}-0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E{sub C}-0.58 eV. Isochronal annealing of the passivated material between 50 and 300 {sup o}C, revealed the emergence of a secondary defect, not previously observed, at E{sub C}-0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 {sup o}C, as all the defects originally observed in the reference sample were recovered.

  2. Inductively coupled plasma induced deep levels in epitaxial n-GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Auret, F.D.; Janse van Rensburg, P.J.; Meyer, W.E.; Coelho, S.M.M. [Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa); Kolkovsky, Vl. [Technische Universitaet, Dresden, 01062 Dresden (Germany); Botha, J.R.; Nyamhere, C. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Venter, A., E-mail: andre.venter@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent electron traps (E{sub c}-0.046 eV, E{sub c}-0.186 eV, E{sub c}-0.314 eV. E{sub c}-0.528 eV and E{sub c}-0.605 eV) were detected. The metastable defect E{sub c}-0.046 eV having a trap signature similar to E1 is observed for the first time. E{sub c}-0.314 eV and E{sub c}-0.605 eV are metastable and appear to be similar to the M3 and M4 defects present in dc H-plasma exposed GaAs.

  3. Demonstrate use of capillary electrophoresis low level transient of anions

    International Nuclear Information System (INIS)

    Moum, Kari-Lye; Solheim, Torill; McElrath, Joel; Frattini, Paul

    2012-09-01

    Capillary Electrophoresis (CE) is a well-known analytical method capable of rapid detection of very low concentration of cations and anionic species such as chloride, sulfate and nitrate. These anions are of crucial importance in reducing the potential of stainless steel components to undergo stress corrosion cracking. Currently, Nuclear Power Plants (NPPs) use Ion Chromatography (IC) as the analytical technique to achieve the required detection levels of ionic species. At the Halden Reactor Project (HRP) IC was replaced by CE in 1996, and since then HRP has gained nearly 20 years of operational experience. During the last 15 years, EPRI has done research on the CE technique and has achieved extensive experience in this area. EPRI has demonstrated detection levels at ppt and sub-ppb levels. This paper presents the ability of the CE technique to follow low level transients of anions in Boiling Water Reactor (BWR) coolant. A transient caused by approx. 10 ppb chloride and sulfate was simulated in an experimental circuit simulating BWR conditions. A series of grab samples were taken and analysed using HRPs CE (Agilent G1600). (authors)

  4. Characterization of semi-insulating materials by photoinduced current transient spectroscopy: Fe doped INP for micro-optoelectronics and CdZnTe for nuclear detection

    International Nuclear Information System (INIS)

    Cherkaoui, K.

    1998-01-01

    The need of semi-insulating materials, of great quality, concerns various application domains. For instance, the very resistive substrates InP and CdZnTe are respectively adapted to the micro-optoelectronic circuits and to nuclear detectors. These two materials have been characterized by the thermal photoinduced current transient spectroscopy. The first part of this thesis is the defects analysis of annealing InP substrates, to understand the compensation process of this material. Two activation energy levels around 0,2 to 0,4 eV resulting from the thermal treatment have been detected. The iron omnipresence in the substrates, even undoped, has been noticed. It is then necessary to take into account the iron presence to understand the compensation process in these InP annealing substrates. the second part presents the study of the CdZnTe material, elaborated by the Bridgman method, to emphasize the defects leading to the decrease of the detector performances. The presence of three deep levels, near the forbidden band middle, is in relation with the detectors performances. (A.L.B.)

  5. Prominent deep medullary veins: a predictive biomarker for stroke risk from transient ischemic attack?

    Science.gov (United States)

    Duan, Yang; Xu, Zhihua; Li, Hongyi; Cai, Xiaonan; Chang, Cancan; Yang, Benqiang

    2018-05-01

    Background Deep medullary veins (DMVs) are a biomarker of severity and prognosis in patients with acute cerebral infarction. However, their clinical significance remains unclear in patients with transient ischemic attack (TIA). Purpose To determine whether prominent deep medullary veins (PDMVs) are a predictive biomarker for stroke risk after TIA. Material and Methods Clinical and imaging data of 49 patients with TIA and 49 sex- and age-matched controls were studied. PDMVs were defined as DMVs with a score of 3 (TDMVs) or asymmetric DMVs (ADMVs), and the relationship between PDMVs and clinical features was analyzed. The DMV score based on susceptibility weighted imaging (SWI) ranged from 0 (not visible) to 3 (very prominent) and was calculated for both hemispheres separately. A different score in each hemisphere was defined as ADMVs and an equal score was defined as symmetric DMVs. The asymmetry and score of DMVs were compared between the two groups and with respect to the time from TIA onset to imaging analysis. Results Agreement between neuroradiologists for the DMV asymmetry/score on SWI was excellent. The frequency of ADMVs and TDMVs was significantly higher in patients with TIA than controls ( P  0.05); PDMVs were not correlated with age, blood pressure, or diabetes. However, PDMVs were associated with the ABCD2 score (≥4), clinical symptoms, and duration of TIA (≥10 min). Conclusion Prominent deep medullary veins is a predictive biomarker for the risk of stroke in many patients having suffered from TIA.

  6. Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy

    International Nuclear Information System (INIS)

    Chung, Sung-Yong; Jin, Niu; Rice, Anthony T.; Berger, Paul R.; Yu, Ronghua; Fang, Z-Q.; Thompson, Phillip E.

    2003-01-01

    Deep-level transient spectroscopy measurements were performed in order to investigate the effects of substrate growth temperature and dopant species on deep levels in Si layers during low-temperature molecular beam epitaxial growth. The structures studied were n + -p junctions using B doping for the p layer and p + -n junctions using P doping for the n layer. While the density of hole traps H1 (0.38-0.41 eV) in the B-doped p layers showed a clear increase with decreasing growth temperature from 600 to 370 degree sign C, the electron trap density was relatively constant. Interestingly, the minority carrier electron traps E1 (0.42-0.45 eV) and E2 (0.257 eV), found in the B-doped p layers, are similar to the majority carrier electron traps E11 (0.48 eV) and E22 (0.269 eV) observed in P-doped n layers grown at 600 degree sign C. It is hypothesized that these dominating electron traps are associated with pure divacancy defects and are independent of the dopant species

  7. Radiation-induced bistable centers with deep levels in silicon n{sup +}–p structures

    Energy Technology Data Exchange (ETDEWEB)

    Lastovskii, S. B., E-mail: lastov@ifttp.bas-net.by [Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus (Belarus); Markevich, V. P. [Manchester University, Photon Science Institute (United Kingdom); Yakushevich, H. S.; Murin, L. I. [Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus (Belarus); Krylov, V. P. [Vladimir State University (Russian Federation)

    2016-06-15

    The method of deep level transient spectroscopy is used to study electrically active defects in p-type silicon crystals irradiated with MeV electrons and α particles. A new radiation-induced defect with the properties of bistable centers is determined and studied. After keeping the irradiated samples at room temperature for a long time or after their short-time annealing at T ∼ 370 K, this defect does not display any electrical activity in p-type silicon. However, as a result of the subsequent injection of minority charge carriers, this center transforms into the metastable configuration with deep levels located at E{sub V} + 0.45 and E{sub V} + 0.54 eV. The reverse transition to the main configuration occurs in the temperature range of 50–100°C and is characterized by the activation energy ∼1.25 eV and a frequency factor of ∼5 × 10{sup 15} s{sup –1}. The determined defect is thermally stable at temperatures as high as T ∼ 450 K. It is assumed that this defect can either be a complex of an intrinsic interstitial silicon atom with an interstitial carbon atom or a complex consisting of an intrinsic interstitial silicon atom with an interstitial boron atom.

  8. Transient response of level instruments in a research reactor

    International Nuclear Information System (INIS)

    Cheng, Lap Y.

    1989-01-01

    A numerical model has been developed to simulate the dynamics of water level instruments in a research nuclear reactor. A bubble device, with helium gas as the working fluid, is used to monitor liquid level by sensing the static head pressure due to the height of liquid in the reactor vessel. A finite-difference model is constructed to study the transient response of the water level instruments to pressure perturbations. The field equations which describe the hydraulics of the helium gas in the bubbler device are arranged in the form of a tridiagonal matrix and the field variables are solved at each time step by the Thomas algorithm. Simulation results indicate that the dynamic response of the helium gas depends mainly on the volume and the inertia of the gas in the level instrument tubings. The anomalies in the simulated level indication are attributed to the inherent lag in the level instrument due to the hydraulics of the system. 1 ref., 5 figs

  9. Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

    Science.gov (United States)

    Dhar, S.; Das, U.; Bhattacharya, P. K.

    1986-01-01

    Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

  10. Levels-of-processing effects on recollection and familiarity during transient global amnesia and after recovery.

    Science.gov (United States)

    Thoma, Patrizia; Schwarz, Michael; Daum, Irene

    2010-11-01

    The aim of the present study was to investigate the pattern of recollection and familiarity deficits and the modulation of recognition memory performance by the depth of encoding (deep vs. shallow) in transient global amnesia (TGA). Ten patients with TGA and 11 control subjects were assessed during the acute stage and after recovery 7 to 19 days later. Both recollection and familiarity were impaired in the acute stage and showed significant, albeit not complete, recovery by the time of the postacute assessment. The patients did, however, show a significant levels-of-processing effect, which was significantly reduced in acute TGA, but not at follow-up. The significant levels-of-processing effect during acute TGA might be linked to recruitment of the prefrontal cortex. (c) 2010 APA, all rights reserved

  11. Fusion of Ultraviolet-Visible and Infrared Transient Absorption Spectroscopy Data to Model Ultrafast Photoisomerization.

    Science.gov (United States)

    Debus, Bruno; Orio, Maylis; Rehault, Julien; Burdzinski, Gotard; Ruckebusch, Cyril; Sliwa, Michel

    2017-08-03

    Ultrafast photoisomerization reactions generally start at a higher excited state with excess of internal vibrational energy and occur via conical intersections. This leads to ultrafast dynamics which are difficult to investigate with a single transient absorption spectroscopy technique, be it in the ultraviolet-visible (UV-vis) or infrared (IR) domain. On one hand, the information available in the UV-vis domain is limited as only slight spectral changes are observed for different isomers. On the other hand, the interpretation of vibrational spectra is strongly hindered by intramolecular relaxation and vibrational cooling. These limitations can be circumvented by fusing UV-vis and IR transient absorption spectroscopy data in a multiset multivariate curve resolution analysis. We apply this approach to describe the spectrodynamics of the ultrafast cis-trans photoisomerization around the C-N double bond observed for aromatic Schiff bases. Twisted intermediate states could be elucidated, and isomerization was shown to occur through a continuous complete rotation. More broadly, data fusion can be used to rationalize a vast range of ultrafast photoisomerization processes of interest in photochemistry.

  12. Hemodynamic measurements in deep brain tissues of humans by near-infrared time-resolved spectroscopy

    Science.gov (United States)

    Suzuki, Hiroaki; Oda, Motoki; Yamaki, Etsuko; Suzuki, Toshihiko; Yamashita, Daisuke; Yoshimoto, Kenji; Homma, Shu; Yamashita, Yutaka

    2014-03-01

    Using near-infrared time-resolved spectroscopy (TRS), we measured the human head in transmittance mode to obtain the optical properties, tissue oxygenation, and hemodynamics of deep brain tissues in 50 healthy adult volunteers. The right ear canal was irradiated with 3-wavelengths of pulsed light (760, 795, and 835nm), and the photons passing through the human head were collected at the left ear canal. Optical signals with sufficient intensity could be obtained from 46 of the 50 volunteers. By analyzing the temporal profiles based on the photon diffusion theory, we successfully obtained absorption coefficients for each wavelength. The levels of oxygenated hemoglobin (HbO2), deoxygenated hemoglobin (Hb), total hemoglobin (tHb), and tissue oxygen saturation (SO2) were then determined by referring to the hemoglobin spectroscopic data. Compared with the SO2 values for the forehead measurements in reflectance mode, the SO2 values of the transmittance measurements of the human head were approximately 10% lower, and tHb values of the transmittance measurements were always lower than those of the forehead reflectance measurements. Moreover, the level of hemoglobin and the SO2 were strongly correlated between the human head measurements in transmittance mode and the forehead measurements in the reflectance mode, respectively. These results demonstrated a potential application of this TRS system in examining deep brain tissues of humans.

  13. Diode characteristics and residual deep-level defects of p+n abrupt junctions fabricated by rapid thermal annealing of boron implanted silicon

    International Nuclear Information System (INIS)

    Usami, A.; Katayama, M.; Wada, T.; Tokuda, Y.

    1987-01-01

    p + n diodes were fabricated by rapid thermal annealing (RTA) of boron implanted silicon in the annealing temperature range 700-1100 0 C for around 7 s, and the RTA temperature dependence of electrical characteristics of these diodes was studied. Deep-level transient spectroscopy (DLTS) measurements were made to evaluate residual deep-level defects in the n-type bulk. Three electron traps were observed in p + n diodes fabricated by RTA at 700 0 C. It was considered that these three traps were residual point defects near the tail of the implantation damage after RTA. Residual defect concentrations increased in the range 700-900 0 C and decreased in the range 1000-1100 0 C. The growth of defects in the bulk was ascribed to the diffusion of defects from the implanted layer during RTA. Concentrations of electron traps observed in p + n diodes fabricated by RTA at 1100 0 C were approx. 10 12 cm -3 . It was found that these residual deep-level defects observed by DLTS were inefficient generation-recombination centres since the reverse current was independent of the RTA temperatures. (author)

  14. In vivo measurements of cerebral metabolic abnormalities by proton spectroscopy after a transient ischemic attack revealing an internal carotid stenosis > 70%

    International Nuclear Information System (INIS)

    Giroud, M.; Becker, F.; Lemesle, M.; Walker, P.; Guy, F.; Martin, D.; Baudouin, N.; Brunotte, F.; Dumas, R.

    1996-01-01

    Aims: The aim of this work is to look for cerebral metabolic abnormalities within the first 3 days after a transient ischemic attack revealing an internal carotid stenosis > 70 %. Methods: Five patients with a transient ischemic attack lasting between 30 and 180 minutes, affecting sensory and motor brachio-facial territory, with or without aphasia. Were studied. A CT-scan, an EEG, a cervical Doppler ultrasound, a standard arteriography, a magnetic resonance imaging and a proton spectroscopy were performed within the cerebral area affected by the transient ischemic attack. We measured 2 markers: N-acetyl-aspartate, the marker of the neuronal mass, and lactate, the marker of anaerobe metabolism. In each case, a contralateral internal stenosis was diagnosed by cervical Doppler ultrasound and standard arteriography. No cerebral infarction was observed. Results: With the affected cerebral area defined according to clinical and EEG features, proton spectroscopy showed a significant rise of lactate, without any change in N-acetyl-aspartate levels. Conclusions: Within the first 3 days after a transient ischemic attack, there is a significant risk of lactate inside the affected cerebral area. This change may reflect a localized and transient hypoperfusion, but long enough to induce a rise of lactate but not sufficient to produce a cerebral infarct. This area is probably at risk to induce cerebral infarct. This data lead us to study the metabolic change induced by the asymptomatic internal carotid stenosis. (authors). 18 refs

  15. High-level transient expression of recombinant protein in lettuce.

    Science.gov (United States)

    Joh, Lawrence D; Wroblewski, Tadeusz; Ewing, Nicholas N; VanderGheynst, Jean S

    2005-09-30

    Transient expression following agroinfiltration of plant tissue was investigated as a system for producing recombinant protein. As a model system, Agrobacterium tumefaciens containing the beta-glucuronidase (GUS) gene was vacuum infiltrated into lettuce leaf disks. Infiltration with a suspension of 10(9) colony forming units/mL followed by incubation for 72 h at 22 degrees C in continuous darkness produced a maximum of 0.16% GUS protein based on dry tissue or 1.1% GUS protein based on total soluble protein. This compares favorably to expression levels for commercially manufactured GUS protein from transgenic corn seeds. A. tumefaciens culture medium pH between 5.6 and 7.0 and surfactant concentrations lettuce to produce GUS protein more rapidly, but final levels did not exceed the GUS production in leaves incubated in continuous darkness after 72 h at 22 degrees C. The kinetics of GUS expression during incubation in continuous light and dark were represented well using a logistic model, with rate constants of 0.30 and 0.29/h, respectively. To semi-quantitatively measure the GUS expression in large numbers of leaf disks, a photometric enhancement of the standard histochemical staining method was developed. A linear relationship with an R2 value of 0.90 was determined between log10 (% leaf darkness) versus log10 (GUS activity). Although variability in expression level was observed, agroinfiltration appears to be a promising technology that could potentially be scaled up to produce high-value recombinant proteins in planta. Copyright 2005 Wiley Periodicals, Inc

  16. Image-based deep learning for classification of noise transients in gravitational wave detectors

    Science.gov (United States)

    Razzano, Massimiliano; Cuoco, Elena

    2018-05-01

    The detection of gravitational waves has inaugurated the era of gravitational astronomy and opened new avenues for the multimessenger study of cosmic sources. Thanks to their sensitivity, the Advanced LIGO and Advanced Virgo interferometers will probe a much larger volume of space and expand the capability of discovering new gravitational wave emitters. The characterization of these detectors is a primary task in order to recognize the main sources of noise and optimize the sensitivity of interferometers. Glitches are transient noise events that can impact the data quality of the interferometers and their classification is an important task for detector characterization. Deep learning techniques are a promising tool for the recognition and classification of glitches. We present a classification pipeline that exploits convolutional neural networks to classify glitches starting from their time-frequency evolution represented as images. We evaluated the classification accuracy on simulated glitches, showing that the proposed algorithm can automatically classify glitches on very fast timescales and with high accuracy, thus providing a promising tool for online detector characterization.

  17. Large-Signal Injection-Level Spectroscopy of Impurities in Silicon

    International Nuclear Information System (INIS)

    Ahrenkiel, R.K.; Johnston, S.W.

    1998-01-01

    Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to an ultra-pure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model

  18. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

    Science.gov (United States)

    Zhang, Z.; Arehart, A. R.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Ringel, S. A.

    2015-01-01

    The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 1013 cm-2 and 3 × 1013 cm-2 fluences not only introduces a trap with an EV + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at EV + 0.48 eV, EV + 2.42 eV, EV + 3.00 eV, and EV + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.

  19. Photo-induced current transient spectroscopy for high-resistivity neutron-transmutation-doped silicon

    International Nuclear Information System (INIS)

    Tokuda, Yutaka; Inoue, Yajiro; Usami, Akira

    1987-01-01

    Defects in high-resistivity neutron-transmutation-doped (NTD) silicon prior to annealing were studied by photo-induced current transient spectroscopy (PICTS). The thermal-neutron fluence was 9.5 x 10 17 cm -2 to give a resistivity of about 30 Ω after annealing, and the fast-neutron fluence was 9.5 x 10 16 cm -2 . Four traps with thermal emission activation energies of 0.15, 0.41. 0.47 and 0.50 eV were observed in NTD silicon. A trap with the thermal emission activation energy of 0.15 eV was considered to correspond to the divacancy. Although the clustered nature of the defects was observed, PICTS measurements suggest that the material state of high-resistivity NTD silicon is still crystalline and not amorphous. (author)

  20. Ultrafast multi-pulse transient absorption spectroscopy of fucoxanthin chlorophyll a protein from Phaeodactylum tricornutum.

    Science.gov (United States)

    West, Robert G; Bína, David; Fuciman, Marcel; Kuznetsova, Valentyna; Litvín, Radek; Polívka, Tomáš

    2018-05-01

    We have applied femtosecond transient absorption spectroscopy in pump-probe and pump-dump-probe regimes to study energy transfer between fucoxanthin and Chl a in fucoxanthin-Chl a complex from the pennate diatom Phaeodactylum tricornutum. Experiments were carried out at room temperature and 77 K to reveal temperature dependence of energy transfer. At both temperatures, the ultrafast (pump-dump-probe regime, with the dump pulse centered in the spectral region of ICT stimulated emission at 950 nm and applied at 2 ps after excitation, proved that the S 1 and ICT states of fucoxanthin in FCP are individual, yet coupled entities. Analysis of the pump-dump-probe data suggested that the main energy donor in the slow S 1 /ICT-Chl a route is the S 1 part of the S 1 /ICT potential surface. Copyright © 2018 Elsevier B.V. All rights reserved.

  1. Broadband stimulated Raman spectroscopy in the deep ultraviolet region

    Science.gov (United States)

    Kuramochi, Hikaru; Fujisawa, Tomotsumi; Takeuchi, Satoshi; Tahara, Tahei

    2017-09-01

    We report broadband stimulated Raman measurements in the deep ultraviolet (DUV) region, which enables selective probing of the aromatic amino acid residues inside proteins through the resonance enhancement. We combine the narrowband DUV Raman pump pulse (1000 cm-1) to realize stimulated Raman measurements covering a >1500 cm-1 spectral window. The stimulated Raman measurements for neat solvents, tryptophan, tyrosine, and glucose oxidase are performed using 240- and 290-nm Raman pump, highlighting the high potential of the DUV stimulated Raman probe for femtosecond time-resolved study of proteins.

  2. A Deep Learning Approach to LIBS Spectroscopy for Planetary Applications

    Science.gov (United States)

    Mullen, T. H.; Parente, M.; Gemp, I.; Dyar, M. D.

    2017-12-01

    The ChemCam instrument on the Curiousity rover has collected >440,000 laser-induced breakdown spectra (LIBS) from 1500 different geological targets since 2012. The team is using a pipeline of preprocessing and partial least squares techniques to predict compositions of surface materials [1]. Unfortunately, such multivariate techniques are plagued by hard-to-meet assumptions involving constant hyperparameter tuning to specific elements and the amount of training data available; if the whole distribution of data is not seen, the method will overfit to the training data and generalizability will suffer. The rover only has 10 calibration targets on-board that represent a small subset of the geochemical samples the rover is expected to investigate. Deep neural networks have been used to bypass these issues in other fields. Semi-supervised techniques allow researchers to utilized small labeled datasets and vast amounts of unlabeled data. One example is the variational autoencoder model, a semi-supervised generative model in the form of a deep neural network. The autoencoder assumes that LIBS spectra are generated from a distribution conditioned on the elemental compositions in the sample and some nuisance. The system is broken into two models: one that predicts elemental composition from the spectra and one that generates spectra from compositions that may or may not be seen in the training set. The synthesized spectra show strong agreement with geochemical conventions to express specific compositions. The predictions of composition show improved generalizability to PLS. Deep neural networks have also been used to transfer knowledge from one dataset to another to solve unlabeled data problems. Given that vast amounts of laboratry LIBS spectra have been obtained in the past few years, it is now feasible train a deep net to predict elemental composition from lab spectra. Transfer learning (manifold alignment or calibration transfer) [2] is then used to fine-tune the model

  3. Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells

    International Nuclear Information System (INIS)

    Dharmarasu, Nethaji; Yamaguchi, Masafumi; Bourgoin, Jacques C.; Takamoto, Tatsuya; Ohshima, Takeshi; Itoh, Hisayoshi; Imaizumi, Mitsuru; Matsuda, Sumio

    2002-01-01

    We report the properties of observed defects in n + /p-InGaP solar cells created by irradiation of protons of different energies. Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (E v +0.90±0.05 eV), HP2 (E v +0.73±0.05 eV), H2 (E v +0.55 eV), and EP1 (E c -0.54 eV), were identified using deep level transient spectroscopy. All majority-carrier traps were found to act as recombination centers. While the H2 trap present in the proton-irradiated p-InGaP was found to anneal out by minority-carrier injection, the other traps were not

  4. Use of interfacial layers to prolong hole lifetimes in hematite probed by ultrafast transient absorption spectroscopy

    Science.gov (United States)

    Paradzah, Alexander T.; Diale, Mmantsae; Maabong, Kelebogile; Krüger, Tjaart P. J.

    2018-04-01

    Hematite is a widely investigated material for applications in solar water oxidation due primarily to its small bandgap. However, full realization of the material continues to be hampered by fast electron-hole recombination rates among other weaknesses such as low hole mobility, short hole diffusion length and low conductivity. To address the problem of fast electron-hole recombination, researchers have resorted to growth of nano-structured hematite, doping and use of under-layers. Under-layer materials enhance the photo-current by minimising electron-hole recombination through suppressing of back electron flow from the substrate, such as fluorine-doped tin oxide (FTO), to hematite. We have carried out ultrafast transient absorption spectroscopy on hematite in which Nb2O5 and SnO2 materials were used as interfacial layers to enhance hole lifetimes. The transient absorption data was fit with four different lifetimes ranging from a few hundred femtoseconds to a few nanoseconds. We show that the electron-hole recombination is slower in samples where interfacial layers are used than in pristine hematite. We also develop a model through target analysis to illustrate the effect of under-layers on electron-hole recombination rates in hematite thin films.

  5. Transient Spectroscopy of Photoexcitations and Morphology Control of Organometal Trihalide Perovskites

    Science.gov (United States)

    Zhai, Yaxin; Lafalce, Evan; Sheng, Chuan-Xiang; Zhang, Chuang; Sun, Dali; Vardeny, Zeev Valy

    We studied the photoexcitation dynamics in various hybrid perovskites by using broadband ps transient photomodulation (PM) spectroscopy and variable stripe length (VSL) technique. We observed both excitonic and free carriers spectral features in MAPbI3 but mainly excitonic transition in MAPbI1.1Br1.9 and MAPbI3-xClx films. We also fabricated MAPbBr3 films with nano-crystal pinning (NCP) treatment, which allows for smaller crystalline grain size. The transient spectra show a narrower and longer-lived photobleaching band in NCP treated films consistent with the increase in the photoluminescence efficiency. In addition the net optical gain measured by VSL is markedly increased up to 300 cm-1, and the lasing threshold is concurrently reduced. Measurement of the waveguide losses in the NCP films shows that the improvement in lasing properties can partly be attributed to the reduced optical scattering. Work supported by the AFOSR through a MURI Grant RA 9550-14-1-0037.

  6. Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

    2018-04-01

    Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC - 2.00 eV, EC - 3.25 eV, and EC - 4.37 eV with concentrations on the order of 1016 cm-3, and a lower concentration level at EC - 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC - 0.1 - 0.2 eV and EC - 0.98 eV. There was no evidence of the commonly observed trap state at ˜EC - 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively "clean" upper part of the bandgap. However, the states at ˜EC - 0.98 eV, EC - 2.00 eV, and EC - 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.

  7. Laser techniques for spectroscopy of core-excited atomic levels

    Science.gov (United States)

    Harris, S. E.; Young, J. F.; Falcone, R. W.; Rothenberg, J. E.; Willison, J. R.

    1982-01-01

    We discuss three techniques which allow the use of tunable lasers for high resolution and picosecond time scale spectroscopy of core-excited atomic levels. These are: anti-Stokes absorption spectroscopy, laser induced emission from metastable levels, and laser designation of selected core-excited levels.

  8. DRAFTS: A DEEP, RAPID ARCHIVAL FLARE TRANSIENT SEARCH IN THE GALACTIC BULGE

    International Nuclear Information System (INIS)

    Osten, Rachel A.; Sahu, Kailash; Kowalski, Adam; Hawley, Suzanne L.

    2012-01-01

    We utilize the Sagittarius Window Eclipsing Extrasolar Planet Search Hubble Space Telescope/Advanced Camera for Surveys data set for a Deep Rapid Archival Flare Transient Search to constrain the flare rate toward the older stellar population in the Galactic bulge. During seven days of monitoring 229,293 stars brighter than V = 29.5, we find evidence for flaring activity in 105 stars between V = 20 and V = 28. We divided the sample into non-variable stars and variable stars whose light curves contain large-scale variability. The flare rate on variable stars is ∼700 times that of non-variable stars, with a significant correlation between the amount of underlying stellar variability and peak flare amplitude. The flare energy loss rates are generally higher than those of nearby well-studied single dMe flare stars. The distribution of proper motions is consistent with the flaring stars being at the distance and age of the Galactic bulge. If they are single dwarfs, then they span a range of ≈1.0-0.25 M ☉ . A majority of the flaring stars exhibit periodic photometric modulations with P < 3 days. If these are tidally locked magnetically active binary systems, then their fraction in the bulge is enhanced by a factor of ∼20 compared to the local value. These stars may be useful for placing constraints on the angular momentum evolution of cool close binary stars. Our results expand the type of stars studied for flares in the optical band, and suggest that future sensitive optical time-domain studies will have to contend with a larger sample of flaring stars than the M dwarf flare stars usually considered.

  9. Transient spectral hole burning observed on the single-molecule level in terrylene-doped biphenyl

    International Nuclear Information System (INIS)

    Pärs, M.; Palm, V.; Kikas, J.

    2014-01-01

    We use the method of fluorescence correlation spectroscopy to analyze the single-molecule (SM) spectroscopy data earlier recorded for a special type of terrylene SM impurity center (referred as “spectrally confined unstable molecule”, SCM) in an incommensurate single crystal of biphenyl. The SCM's SM line seems to be chaotically jumping around within a broad “spectral envelope” and was first considered being subject to a peculiar spectral diffusion behavior. However, our correlation analysis reveals that all the features observed for SCM at 1.8 K are consistent with an assumption that this SM center participates in a process of reversible (transient) spectral hole burning (THB) earlier observed for terrylene-doped polycrystalline biphenyl. No observations of THB processes on SM level have been so far reported for this impurity system, partially due to a low concentration of relevant impurity centers. Another reason making searching for such centers experimentally challenging is an unusual SM line behavior: the photoinduced transition to a metastable “dark state” leads to the SM line saturational broadening, which is much stronger than the triplet broadening. Hence required prolonged observation is often prevented by an SM act of persistent spectral hole burning. - Highlights: • SCM—special type of terrylene single-molecule center in incommensurate biphenyl. • An unusually stable SCM was investigated during several hours at T=1.8 K. • SCM undergoes photoinduced transitions to an unknown metastable “dark state” (DS). • The long DS lifetime causes strong saturational broadening of SCM spectral line. • SCM participates in an earlier observed process of transient hole burning

  10. A microcomputer-controlled modulation technique for the detection of transient species in UV photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Lonkhuyzen, H. van; Muller, H.G.; Lange, C.A. de

    1980-01-01

    A microcomputer-controlled modulation method is described to measure UV photoelectron spectra of transient species generated in a microwave discharge. Spectra at low and high microwave power levels are simultaneously recorded and afterwards linearly combined in order to remove parent compound signals. The method is applied to discharged oxygen where the transition O 2 + ( 2 PHIsub(u)) 2 ( 1 Δsub(g)) becomes visible without interference from the parent molecule O 2 ( 3 Σsub(g) - ), and to discharged sulphur dioxide where SO( 3 Σ - ) and S( 3 P) photoelectron spectra are obtained free from SO 2 bands. Finally the build-up of transient bands as a function of time is recorded. (orig.)

  11. Ultrafast Transient Absorption Spectroscopy of Polymer-Based Organophotoredox Catalysts Mimicking Transition-Metal Complexes

    Science.gov (United States)

    Jamhawi, Abdelqader; Paul, Anam C.; Smith, Justin D.; Handa, Sachin; Liu, Jinjun

    2017-06-01

    Transition-metal complexes of rare earth metals including ruthenium and iridium are most commonly employed as visible-light photocatalysts. Despite their highly important and broad applications, they have many disadvantages including high cost associated with low abundance in earth crust, potential toxicity, requirement of specialized ligands for desired activity, and difficulty in recycling of metal contents as well as associated ligands. Polymer-based organophotoredox catalysts are promising alternatives and possess unique advantages such as easier synthesis from inexpensive starting material, longer excited state life time, broad range of activity, sustainability, and recyclability. In this research talk, time-resolved photoluminescence and femtosecond transient absorption (TA) spectroscopy measurements of three novel polymer-based organophotoredox catalysts will be presented. By our synthetic team, their catalytic activity has been proven in some highly valuable chemical transformations, that otherwise require transition metal complexes. Time-resolved spectroscopic investigations have demonstrated that photoinduced processes in these catalysts are similar to the transition metal complexes. Especially, intramolecular vibrational relaxation, internal conversion, and intersystem crossing from the S1 state to the T1 state all occur on a sub-picosecond timescale. The long lifetime of the T1 state ( 2-3 microsecond) renders these polymers potent oxidizing and reducing agents. A spectroscopic and kinetic model has been developed for global fitting of TA spectra in both the frequency and time domains. Implication of the current ultrafast spectroscopy studies of these novel molecules to their roles in photocatalysis will be discussed.

  12. Understanding charge carrier relaxation processes in terbium arsenide nanoparticles using transient absorption spectroscopy

    Science.gov (United States)

    Vanderhoef, Laura R.

    Erbium arsenide nanoparticles epitaxially grown within III-V semiconductors have been shown to improve the performance of devices for applications ranging from thermoelectrics to THz pulse generation. The small size of rare-earth nanoparticles suggests that interesting electronic properties might emerge as a result of both spatial confinement and surface states. However, ErAs nanoparticles do not exhibit any signs of quantum confinement or an emergent bandgap, and these experimental observations are understood from theory. The incorporation of other rare-earth monopnictide nanoparticles into III-V hosts is a likely path to engineering carrier excitation, relaxation and transport dynamics for optoelectronic device applications. However, the electronic structure of these other rare-earth monopnictide nanoparticles remains poorly understood. The objective of this research is to explore the electronic structure and optical properties of III-V materials containing novel rare-earth monopnictides. We use ultrafast pump-probe spectroscopy to investigate the electronic structure of TbAs nanoparticles in III-V hosts. We start with TbAs:GaAs, which was expected to be similar to ErAs:GaAs. We study the dynamics of carrier relaxation into the TbAs states using optical pump terahertz probe transient absorption spectroscopy. By analyzing how the carrier relaxation rates depend on pump fluence and sample temperature, we conclude that the TbAs states are saturable. Saturable traps suggest the existence of a bandgap for TbAs nanoparticles, in sharp contrast with previous results for ErAs. We then apply the same experimental technique to two samples of TbAs nanoparticles in InGaAs with different concentrations of TbAs. We observe similar relaxation dynamics associated with trap saturation, though the ability to resolve these processes is contingent upon a high enough TbAs concentration in the sample. We have also constructed an optical pump optical probe transient absorption

  13. Deep defect levels in standard and oxygen enriched silicon detectors before and after **6**0Co-gamma-irradiation

    CERN Document Server

    Stahl, J; Lindström, G; Pintilie, I

    2003-01-01

    Capacitance Deep Level Transient Spectroscopy (C-DLTS) measurements have been performed on standard and oxygen-doped silicon detectors manufactured from high-resistivity n-type float zone material with left angle bracket 111 right angle bracket and left angle bracket 100 right angle bracket orientation. Three different oxygen concentrations were achieved by the so-called diffusion oxygenated float zone (DOFZ) process initiated by the CERN-RD48 (ROSE) collaboration. Before the irradiation a material characterization has been performed. In contrast to radiation damage by neutrons or high- energy charged hadrons, were the bulk damage is dominated by a mixture of clusters and point defects, the bulk damage caused by **6**0Co-gamma-radiation is only due to the introduction of point defects. The dominant electrically active defects which have been detected after **6**0Co-gamma-irradiation by C-DLTS are the electron traps VO//i, C//iC//s, V//2( = /-), V //2(-/0) and the hole trap C//i O//i. The main difference betwe...

  14. Identification of nitrogen- and host-related deep-level traps in n-type GaNAs and their evolution upon annealing

    International Nuclear Information System (INIS)

    Gelczuk, Ł.; Kudrawiec, R.; Henini, M.

    2014-01-01

    Deep level traps in as-grown and annealed n-GaNAs layers (doped with Si) of various nitrogen concentrations (N = 0.2%, 0.4%, 0.8%, and 1.2%) were investigated by deep level transient spectroscopy. In addition, optical properties of GaNAs layers were studied by photoluminescence and contactless electroreflectance. The identification of N- and host-related traps has been performed on the basis of band gap diagram [Kudrawiec, Appl. Phys. Lett. 101, 082109 (2012)], which assumes that the activation energy of electron traps of the same microscopic nature decreases with the rise of nitrogen concentration in accordance with the N-related shift of the conduction band towards trap levels. The application of this diagram has allowed to investigate the evolution of donor traps in GaNAs upon annealing. In general, it was observed that the concentration of N- and host-related traps decreases after annealing and PL improves very significantly. However, it was also observed that some traps are generated due to annealing. It explains why the annealing conditions have to be carefully optimized for this material system.

  15. Ionization and dissociation dynamics of vinyl bromide probed by femtosecond extreme ultraviolet transient absorption spectroscopy

    International Nuclear Information System (INIS)

    Lin, Ming-Fu; Neumark, Daniel M.; Gessner, Oliver; Leone, Stephen R.

    2014-01-01

    Strong-field induced ionization and dissociation dynamics of vinyl bromide, CH 2 =CHBr, are probed using femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy. Strong-field ionization is initiated with an intense femtosecond, near infrared (NIR, 775 nm) laser field. Femtosecond XUV pulses covering the photon energy range of 50-72 eV probe the subsequent dynamics by measuring the time-dependent spectroscopic features associated with transitions of the Br (3d) inner-shell electrons to vacancies in molecular and atomic valence orbitals. Spectral signatures are observed for the depletion of neutral C 2 H 3 Br, the formation of C 2 H 3 Br + ions in their ground (X ~ ) and first excited (A ~ ) states, the production of C 2 H 3 Br ++ ions, and the appearance of neutral Br ( 2 P 3/2 ) atoms by dissociative ionization. The formation of free Br ( 2 P 3/2 ) atoms occurs on a timescale of 330 ± 150 fs. The ionic A ~ state exhibits a time-dependent XUV absorption energy shift of ∼0.4 eV within the time window of the atomic Br formation. The yield of Br atoms correlates with the yield of parent ions in the A ~ state as a function of NIR peak intensity. The observations suggest that a fraction of vibrationally excited C 2 H 3 Br + (A ~ ) ions undergoes intramolecular vibrational energy redistribution followed by the C–Br bond dissociation. The C 2 H 3 Br + (X ~ ) products and the majority of the C 2 H 3 Br ++ ions are relatively stable due to a deeper potential well and a high dissociation barrier, respectively. The results offer powerful new insights about orbital-specific electronic processes in high field ionization, coupled vibrational relaxation and dissociation dynamics, and the correlation of valence hole-state location and dissociation in polyatomic molecules, all probed simultaneously by ultrafast table-top XUV spectroscopy

  16. Improved Carrier Transport in Perovskite Solar Cells Probed by Femtosecond Transient Absorption Spectroscopy.

    Science.gov (United States)

    Serpetzoglou, Efthymis; Konidakis, Ioannis; Kakavelakis, George; Maksudov, Temur; Kymakis, Emmanuel; Stratakis, Emmanuel

    2017-12-20

    CH 3 NH 3 PbI 3 perovskite thin films have been deposited on glass/indium tin oxide/hole transport layer (HTL) substrates, utilizing two different materials as the HTLs. In the first configuration, the super hydrophilic polymer poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate), known as PEDOT:PSS, was employed as the HTL material, whereas in the second case, the nonwetting poly(triarylamine) semiconductor polymer, known as PTAA, was used. It was found that when PTAA is used as the HTL material, the averaged power conversion efficiency (PCE) of the perovskite solar cells (PSCs) remarkably increases from 12.60 to 15.67%. To explore the mechanism behind this enhancement, the aforementioned perovskite/HTL arrangements were investigated by time-resolved transient absorption spectroscopy (TAS) performed under inert conditions. By means of TAS, the charge transfer, carrier trapping, and hole injection dynamics from the photoexcited perovskite layers to the HTL can be directly monitored via the characteristic bleaching profile of the perovskite at ∼750 nm. TAS studies revealed faster relaxation times and decay dynamics when the PTAA polymer is employed, which potentially account for the enhanced PCE observed. The TAS results are correlated with the structure and crystalline quality of the corresponding perovskite films, investigated by scanning electron microscopy, X-ray diffraction, atomic force microscopy, micro-photoluminescence, and transmittance spectroscopy. It is concluded that TAS is a benchmark technique for the understanding of the carrier transport mechanisms in PSCs and constitutes a figure-of-merit tool toward their efficiency improvement.

  17. The Deep-Level-Reasoning-Question Effect: The Role of Dialogue and Deep-Level-Reasoning Questions during Vicarious Learning

    Science.gov (United States)

    Craig, Scotty D.; Sullins, Jeremiah; Witherspoon, Amy; Gholson, Barry

    2006-01-01

    We investigated the impact of dialogue and deep-level-reasoning questions on vicarious learning in 2 studies with undergraduates. In Experiment 1, participants learned material by interacting with AutoTutor or by viewing 1 of 4 vicarious learning conditions: a noninteractive recorded version of the AutoTutor dialogues, a dialogue with a…

  18. A High-Speed Spectroscopy System for Observing Lightning and Transient Luminous Events

    Science.gov (United States)

    Boggs, L.; Liu, N.; Austin, M.; Aguirre, F.; Tilles, J.; Nag, A.; Lazarus, S. M.; Rassoul, H.

    2017-12-01

    Here we present a high-speed spectroscopy system that can be used to record atmospheric electrical discharges, including lightning and transient luminous events. The system consists of a Phantom V1210 high-speed camera, a Volume Phase Holographic (VPH) grism, an optional optical slit, and lenses. The spectrograph has the capability to record videos at speeds of 200,000 frames per second and has an effective wavelength band of 550-775 nm for the first order spectra. When the slit is used, the system has a spectral resolution of about 0.25 nm per pixel. We have constructed a durable enclosure made of heavy duty aluminum to house the high-speed spectrograph. It has two fans for continuous air flow and a removable tray to mount the spectrograph components. In addition, a Watec video camera (30 frames per second) is attached to the top of the enclosure to provide a scene view. A heavy duty Pelco pan/tilt motor is used to position the enclosure and can be controlled remotely through a Rasperry Pi computer. An observation campaign has been conducted during the summer and fall of 2017 at the Florida Institute of Technology. Several close cloud-to-ground discharges were recorded at 57,000 frames per second. The spectrum of a downward stepped negative leader and a positive cloud-to-ground return stroke will be reported on.

  19. Final Technical Report: Vibrational Spectroscopy of Transient Combustion Intermediates Trapped in Helium Nanodroplets

    Energy Technology Data Exchange (ETDEWEB)

    Douberly, Gary Elliott [Univ. of Georgia, Athens, GA (United States)

    2017-11-16

    The objective of our experimental research program is to isolate and stabilize transient intermediates and products of prototype combustion reactions. This will be accomplished by Helium Nanodroplet Isolation, a novel technique where liquid helium droplets freeze out high energy metastable configurations of a reacting system, permitting infrared spectroscopic characterizations of products and intermediates that result from hydrocarbon radical reactions with molecular oxygen and other small molecules relevant to combustion environments. The low temperature (0.4 K) and rapid cooling associated with He droplets provides a perfectly suited medium to isolate and probe a broad range of molecular radical and carbene systems important to combustion chemistry. The sequential addition of molecular species to He droplets often leads to the stabilization of high-energy, metastable cluster configurations that represent regions of the potential energy surface far from the global minimum. Single and double resonance IR laser spectroscopy techniques, along with Stark and Zeeman capabilities, are being used to probe the structural and dynamical properties of these systems.

  20. Deep borehole disposal of high-level radioactive waste.

    Energy Technology Data Exchange (ETDEWEB)

    Stein, Joshua S.; Freeze, Geoffrey A.; Brady, Patrick Vane; Swift, Peter N.; Rechard, Robert Paul; Arnold, Bill Walter; Kanney, Joseph F.; Bauer, Stephen J.

    2009-07-01

    Preliminary evaluation of deep borehole disposal of high-level radioactive waste and spent nuclear fuel indicates the potential for excellent long-term safety performance at costs competitive with mined repositories. Significant fluid flow through basement rock is prevented, in part, by low permeabilities, poorly connected transport pathways, and overburden self-sealing. Deep fluids also resist vertical movement because they are density stratified. Thermal hydrologic calculations estimate the thermal pulse from emplaced waste to be small (less than 20 C at 10 meters from the borehole, for less than a few hundred years), and to result in maximum total vertical fluid movement of {approx}100 m. Reducing conditions will sharply limit solubilities of most dose-critical radionuclides at depth, and high ionic strengths of deep fluids will prevent colloidal transport. For the bounding analysis of this report, waste is envisioned to be emplaced as fuel assemblies stacked inside drill casing that are lowered, and emplaced using off-the-shelf oilfield and geothermal drilling techniques, into the lower 1-2 km portion of a vertical borehole {approx}45 cm in diameter and 3-5 km deep, followed by borehole sealing. Deep borehole disposal of radioactive waste in the United States would require modifications to the Nuclear Waste Policy Act and to applicable regulatory standards for long-term performance set by the US Environmental Protection Agency (40 CFR part 191) and US Nuclear Regulatory Commission (10 CFR part 60). The performance analysis described here is based on the assumption that long-term standards for deep borehole disposal would be identical in the key regards to those prescribed for existing repositories (40 CFR part 197 and 10 CFR part 63).

  1. Investigation of deep level defects in epitaxial semiconducting zinc sulpho-selenide. Progress report, 15 June 1979-14 June 1980

    International Nuclear Information System (INIS)

    Wessels, B.W.

    1980-01-01

    In an effort to understand the defect structure of the ternary II-VI compound zinc sulpho-selenide, the binary compound zinc selenide was investigated. Thin single crystalline films of zinc selenide were heteroepitaxially grown on (100) GaAs. Epitaxial layers from 5 to 50 microns thick could be readily grown using a chemical vapor transport technique. The layers had an excellent morphology with few stacking faults and hillocks. Detailed epitaxial growth kinetics were examined as a function of temperature and reactant concentration. It was found that hydrogen flow rate, source and substrate temperature affect the growth rate of the epitaxial films. Au - ZnSe Schottky barrier diodes and ZnSe - GaAs n-p heterojunctions were prepared from the epitaxial layers. Current-voltage characteristics were measured on both types of diodes. From capacitance-voltage measurements the residual doping density of the epitaxial layers were found to be of the order of 10 14 - 10 15 cm -3 . Finally, we have begun to measure the deep level spectrum of both the Schottky barrier diodes and the heterojunctions. Deep level transient spectroscopy appears to be well suited for determining trapping states in ZnSe provided the material has a low enough resistivity

  2. The injection spectroscopy method for the study of deep traps in CdTe films

    International Nuclear Information System (INIS)

    Lyubchak, V.O.; Opanasyuk, A.S.; Tirkusova, N.V.; Kharchenko, V.Yi.

    1999-01-01

    A simple highly informative method is presented, which enables to precisely identify the mechanism of charge transfer in the investigated structures and to extract a correct information about the parameters of local states in the energy gap band of the material via space-change-limited current-voltage characteristics. The modelling shows a good coincidence of the parameters, reconstructed with the help of this method, of the distribution of traps with the input parameters of deep traps. Some modification of the differential method are tested on high-ohm med CdTe films. Four groups of monoenergetic deep traps are found. The obtained results evidence the perspectives of the injection spectroscopy method for the research of deep traps in semiconducting and dielectric materials

  3. Study and microscopic characterization of the cadmium telluride deep levels

    International Nuclear Information System (INIS)

    Biglari, B.

    1989-05-01

    The spectroscopic methods PICTS, QTS and CTS were developed and perfected to investigate deep level analysis of high resistivity CdTe crystals which were either undoped, or doped with chlorine and copper. Crystals which were grown in space were also investigated. The main characterization of defect levels was determined and different correlations were established between the material's resistivity, chemical residues, dopant concentration and the nuclear radiation detector parameters. Using PICTS and CTS techniques, the generation of defects, under strong gamma-ray irradiation and particle bombardment was also studied. The influence of hydrogen on the main electrical characteristics of CdTe, in particular its ability to passivate the electrical activity of many deep defect and impurity states have been demonstrated. The compensation effects of Cl, Cu and H + are interpreted using the qualitative models based on different possibilities of pairing or triplet formation between the ions of these dopants and those of defects [fr

  4. DLTS and capacitance transients study of defects induced by neutron irradiation in MOS structures CCD process

    International Nuclear Information System (INIS)

    Ahaitouf, A.; Losson, E.; Charles, J.P.

    1999-01-01

    The aim of this paper is to study neutron irradiation effects on PMOS capacitors and NMOSFETs transistors. The characterization of induced defects was made by capacitance transients C(t) measurements, DLTS spectroscopy, and optical DLTS (ODLTS). DLTS spectra present three peaks due to deep levels created in the semiconductor and two peaks due to minority carrier generation. Two levels are reported in the literature. Two other minority carrier traps have been observed on ODLTS spectra after irradiation. This can explain the decrease of the minority carrier generation lifetime observed by capacitance transients measurements. (authors)

  5. Uncovering molecular relaxation processes with nonlinear spectroscopies in the deep UV

    International Nuclear Information System (INIS)

    West, Brantley A.; Molesky, Brian P.; Giokas, Paul G.; Moran, Andrew M.

    2013-01-01

    Highlights: • We discuss the outlook for multidimensional spectroscopies in the deep UV. • Photophysics are examined in small DNA components at cryogenic temperatures. • Wavepacket motions are detected in ring-opening systems with 2DUV spectroscopy. • Measurements of electronic wavepacket motions in molecules are proposed. - Abstract: Nonlinear laser spectroscopies in the deep UV spectral range are motivated by studies of biological systems and elementary processes in small molecules. This perspective article discusses recent technical advances in this area with a particular emphasis on diffractive optic based approaches to four-wave mixing spectroscopies. Applications to two classes of systems illustrate present experimental capabilities. First, experiments on DNA components at cryogenic temperatures are used to uncover features of excited state potential energy surfaces and vibrational cooling mechanisms. Second, sub-200 fs internal conversion processes and coherent wavepacket motions are investigated in cyclohexadiene and α-terpinene. Finally, we propose new experimental directions that combine methods for producing few-cycle UV laser pulses in noble gases with incoherent detection methods (e.g., photoionization) in experiments with time resolution near a singlefemtosecond. These measurements are motivated by knowledge of extremely fast non-adiabatic dynamics and the resolution of electronic wavepacket motions in molecules

  6. Effect of deep dislocation levels in silicon on the properties of p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Zakharov, A.G.; Dudko, V.G.; Nabokov, G.M.; Sechenov, D.A.

    1988-07-01

    We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10/sup /minus/7/ sec to 3 /centered dot/10/sup /minus/6/ sec when the dislocation density N/sub d/ varies from 10/sup 7/ cm/sup /minus/2/ to 5 /centered dot/10/sup 3/ cm/sup /minus/2/. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N/sub d/. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.

  7. Deep subcritical levels measurements dependents upon kinetic distortion factors

    International Nuclear Information System (INIS)

    Pan Shibiao; Li Xiang; Fu Guo'en; Huang Liyuan; Mu Keliang

    2013-01-01

    The measurement of deep subcritical levels, with the increase of subcriticality, showed that the results impact on the kinetic distortion effect, along with neutron flux strongly deteriorated. Using the diffusion theory, calculations have been carried out to quantify the kinetic distortion correction factors in subcritical systems, and these indicate that epithermal neutron distributions are strongly affected by kinetic distortion. Subcriticality measurements in four different rod-state combination at the zero power device was carried out. The test data analysis shows that, with increasing subcriticality, kinetic distortion effect correction factor gradually increases from 1.052 to 1.065, corresponding reactive correction amount of 0.78β eff ∼ 3.01β eff . Thus, it is necessary to consider the kinetic distortion effect in the deep subcritical reactivity measurements. (authors)

  8. Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

    International Nuclear Information System (INIS)

    Lee, H.S.; Yamaguchi, M.; Ekins-Daukes, N. J.; Khan, A.; Takamoto, T.; Agui, T.; Kamimura, K.; Kaneiwa, M.; Imaizumi, M.; Ohshima, T.; Itoh, H.

    2005-01-01

    Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al 0.08 Ga 0.92 ) 0.52 In 0.48 P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm -1 , which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E ν +0.90±0.05 eV) was observed. The changes in carrier concentrations (Δp) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm -1 , of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm -1 , in p-AlInGaP. From the minority-carrier injection annealing (100 mA/cm 2 ), the annealing activation energy of H2 defect is ΔE=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (V p -P i ). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center

  9. Towards a Molecular Movie: Real Time Observation of Hydrogen Bond Breaking by Transient 2D-IR Spectroscopy in a Cyclic Peptide

    Science.gov (United States)

    Kolano, Christoph; Helbing, Jan; Sander, Wolfram; Hamm, Peter

    Transient two-dimensional infrared spectroscopy (T2D-IR) has been used to observe in real time the non-equilibrium structural dynamics of intramolecular hydrogen bond breaking in a small cyclic disulfide-bridged peptide.

  10. Infrared spectroscopy of Landau levels of graphene.

    Science.gov (United States)

    Jiang, Z; Henriksen, E A; Tung, L C; Wang, Y-J; Schwartz, M E; Han, M Y; Kim, P; Stormer, H L

    2007-05-11

    We report infrared studies of the Landau level (LL) transitions in single layer graphene. Our specimens are density tunable and show in situ half-integer quantum Hall plateaus. Infrared transmission is measured in magnetic fields up to B=18 T at selected LL fillings. Resonances between hole LLs and electron LLs, as well as resonances between hole and electron LLs, are resolved. Their transition energies are proportional to sqrt[B], and the deduced band velocity is (-)c approximately equal to 1.1 x 10(6) m/s. The lack of precise scaling between different LL transitions indicates considerable contributions of many-particle effects to the infrared transition energies.

  11. Multi-level deep supervised networks for retinal vessel segmentation.

    Science.gov (United States)

    Mo, Juan; Zhang, Lei

    2017-12-01

    Changes in the appearance of retinal blood vessels are an important indicator for various ophthalmologic and cardiovascular diseases, including diabetes, hypertension, arteriosclerosis, and choroidal neovascularization. Vessel segmentation from retinal images is very challenging because of low blood vessel contrast, intricate vessel topology, and the presence of pathologies such as microaneurysms and hemorrhages. To overcome these challenges, we propose a neural network-based method for vessel segmentation. A deep supervised fully convolutional network is developed by leveraging multi-level hierarchical features of the deep networks. To improve the discriminative capability of features in lower layers of the deep network and guide the gradient back propagation to overcome gradient vanishing, deep supervision with auxiliary classifiers is incorporated in some intermediate layers of the network. Moreover, the transferred knowledge learned from other domains is used to alleviate the issue of insufficient medical training data. The proposed approach does not rely on hand-crafted features and needs no problem-specific preprocessing or postprocessing, which reduces the impact of subjective factors. We evaluate the proposed method on three publicly available databases, the DRIVE, STARE, and CHASE_DB1 databases. Extensive experiments demonstrate that our approach achieves better or comparable performance to state-of-the-art methods with a much faster processing speed, making it suitable for real-world clinical applications. The results of cross-training experiments demonstrate its robustness with respect to the training set. The proposed approach segments retinal vessels accurately with a much faster processing speed and can be easily applied to other biomedical segmentation tasks.

  12. High-level radioactive waste disposal in the deep ocean

    International Nuclear Information System (INIS)

    Hill, H.W.

    1977-01-01

    A joint programme has begun between the Fisheries Laboratory, Lowestoft and the Institute of Oceanographic Sciences, Wormley to study the dispersion of radioactivity in the deep ocean arising from the possible dumping of high level waste on the sea bed in vitrified-glass form which would permit slow leakage over a long term scale. The programme consists firstly of the development of a simple diffusion/advection model for the dispersion of radioactivity in a closed and finite ocean, which overcomes many of the criticisms of the earlier model proposed by Webb and Morley. Preliminary results from this new model are comparable to those of the Webb-Morley model for radio isotopes with half-lives of 10-300 years but are considerably more restrictive outside this range, particularly for those which are much longer-lived. The second part of the programme, towards which the emphasis is directed, concerns the field programme planned to measure the advection and diffusion parameters in the deeper layers of the ocean to provide realistic input parameters to the model and increase our fundamental understanding of the environment in which the radioactive materials may be released. The first cruises of the programme will take place in late 1976 and involve deep current meter deployments and float dispersion experiments around the present NEA dump site with some sediment sampling, so that adsorption experiments can be started on typical deep sea sediments. The programme will expand the number of long-term deep moored stations over the next five years and include further float experiments, CTD profiling, and other physical oceanography. In the second half of the 5-year programme, attempts will be made to measure diffusion parameters in the deeper layers of the ocean using radioactive tracers

  13. Deep impurity levels in n-type copper oxides

    International Nuclear Information System (INIS)

    Ovchinnikov, S.G.

    1994-01-01

    The density of Nd 2-x Ce x CuO 4 monoparticle states was calculated by the method of precise diagonalization of multielectron hamiltonian of 6-zone model for CuO cluster. Emergence of a deep impurity state of a symmetry in the middle of dielectric slit, which is a mixture of d z 2-states of copper and a 1 -molecular orbital of oxygen, is shown. Fluctuation of parameters of p-d jump and energies of charge transfer provide additional fine impurity levels near the bottom of conductivity zone and ceiling of valency zone. 30 refs., 4 figs

  14. Linear photophysics, two-photon absorption and femtosecond transient absorption spectroscopy of styryl dye bases

    Energy Technology Data Exchange (ETDEWEB)

    Shaydyuk, Ye.O. [Institute of Physics, Prospect Nauki, 46, Kyiv-28 03028 Ukraine (Ukraine); Levchenko, S.M. [Institute of Molecular Biology and Genetics, 150, Akademika Zabolotnoho Str., Kyiv 036803 (Ukraine); Kurhuzenkau, S.A. [Department of Chemistry, University of Parma, Parco Area delle Scienze 17/A, Parma 43124 (Italy); Anderson, D. [NanoScienece Technology Center, University of Central Florida, 12424 Research Parkway, PAV400, Orlando, FL 32826 (United States); Department of Chemistry, University of Central Florida, 4111 Libra Drive, PSB225, Orlando, FL 32816 (United States); Masunov, A.E. [NanoScienece Technology Center, University of Central Florida, 12424 Research Parkway, PAV400, Orlando, FL 32826 (United States); Department of Chemistry, University of Central Florida, 4111 Libra Drive, PSB225, Orlando, FL 32816 (United States); South Ural State University, Lenin pr. 76, Chelyabinsk 454080 (Russian Federation); Department of Condensed Matter Physics, National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow 115409 (Russian Federation); Photochemistry Center RAS, ul. Novatorov 7a, Moscow 119421 (Russian Federation); Kachkovsky, O.D.; Slominsky, Yu.L.; Bricks, J.L. [Insitute of Organic Chemistry, Murmanskaya Street, 5, Kyiv 03094 (Ukraine); Belfield, K.D. [College of Science and Liberal Arts, New Jersey Institute of Technology, University Heights, Newark, NJ 07102 (United States); School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi’an, 710062 (China); Bondar, M.V., E-mail: mbondar@mail.ucf.edu [Institute of Physics, Prospect Nauki, 46, Kyiv-28 03028 Ukraine (Ukraine)

    2017-03-15

    The steady-state and time-resolved linear spectral properties, two-photon absorption spectra and fast relaxation processes in the excited states of styryl base-type derivatives were investigated. The nature of linear absorption, fluorescence and excitation anisotropy spectra were analyzed in solvents of different polarity at room temperature and specific dependence of the solvatochromic behavior on the donor-acceptor strength of the terminal substituents was shown. Two-photon absorption (2PA) efficiency of styryl dye bases was determined in a broad spectral range using two-photon induced fluorescence technique, and cross-sections maxima of ~ 100 GM were found. The excited state absorption (ESA) and fast relaxation processes in the molecular structures were investigated by transient absorption femtosecond pump-probe methodology. The role of twisted intramolecular charge transfer (TICT) effect in the excited state of styryl dye base with dimethylamino substituent was shown. The experimental spectroscopic data were also verified by quantum chemical calculations at the Time Dependent Density Functional Theory level, combined with a polarizable continuum model.

  15. Transient Resonance Raman Spectroscopy of a Light-Driven Sodium-Ion-Pump Rhodopsin from Indibacter alkaliphilus.

    Science.gov (United States)

    Kajimoto, Kousuke; Kikukawa, Takashi; Nakashima, Hiroki; Yamaryo, Haruki; Saito, Yuta; Fujisawa, Tomotsumi; Demura, Makoto; Unno, Masashi

    2017-05-04

    Sodium-ion-pump rhodopsin (NaR) is a microbial rhodopsin that transports Na + during its photocycle. Here we explore the photocycle mechanism of NaR from Indibacter alkaliphilus with transient absorption and transient resonance Raman spectroscopy. The transient absorption data indicate that the photocycle of NaR is K (545 nm) → L (490 nm)/M (420 nm) → O 1 (590 nm) → O 2 (560 nm) → NaR, where the L and M are formed as equilibrium states. The presence of K, L, M, and O intermediates was confirmed by the resonance Raman spectra with 442 and 532 nm excitation. The main component of the transient resonance Raman spectra was due to L which contains a 13-cis retinal protonated Schiff base. The presence of an enhanced hydrogen out-of-plane band as well as its sensitivity to the H/D exchange indicate that the retinal chromophore is distorted near the Schiff base region in L. Moreover, the retinal Schiff base of the L state forms a hydrogen bond that is stronger than that of the dark state. These observations are consistent with a Na + pumping mechanism that involves a proton transfer from the retinal Schiff base to a key aspartate residue (Asp116 in Krokinobacter eikastus rhodopsin 2) in the L/M states.

  16. Ultrafast Transient Absorption Spectroscopy Investigation of Photoinduced Dynamics in POLY(3-HEXYLTHIOPHENE)-BLOCK-OLIGO(ANTHRACENE-9,10-DIYL)

    Science.gov (United States)

    Strain, Jacob; Rathnayake, Hemali; Liu, Jinjun

    2017-06-01

    Semiconducting polymer nanostructures featuring bulk heterojunction (BHJ) architecture are promising light harvesters in photovoltaic (PV) devices because they allow control of individual domain sizes, internal structure and ordering, as well as well-defined contact between the electron donor and acceptor. Power conversion efficiency (PCE) of PV devices strongly depends on photoinduced dynamics. Understanding and optimizing photoinduced charge transfer processes in BHJ's hence help improve the performance of PV devices and increase their PCE in particular. We have investigated the photoinduced dynamics of a block polymer containing moieties of poly-3-hexylthiophene (P3HT) and polyanthracene (PANT) in solution and in solid state with femtosecond transient absorption (TA) spectroscopy. The dynamics of the polymer PANT alone are also studied as a control. The TA spectra of PANT includes a strong excited state absorption centered at 610 (nm) along with a stimulated emission signal stretching past the detection limit into the UV region which is absent in the monomer's spectra in the detection window. The block polymer's TA spectra strongly resembles that of P3HT but a noticeable positive pull on P3HT's stimulated emission signal residing at 575-620 (nm) is indicative of the excited state absorption of PANT in the adjacent spectral region. The doubling of the lifetime exciton delocalization on the block polymer versus P3HT alone have alluded that the lifetime of P3HT is extended by the covalent addition of PANT. The current spectroscopic investigation represents an interesting example of photoinduced processes in systems with complex energy level structure. Studies of dependence of change generation and separation on composition, dimension, and morphology of the heterojunctions are in process.

  17. Human-level control through deep reinforcement learning

    Science.gov (United States)

    Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A.; Veness, Joel; Bellemare, Marc G.; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K.; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

    2015-02-01

    The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

  18. Human-level control through deep reinforcement learning.

    Science.gov (United States)

    Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A; Veness, Joel; Bellemare, Marc G; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

    2015-02-26

    The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

  19. Determination of deep-level impurities and their effects on the small-single and LF noise properties of ion-implanted GaAs MESFETs

    International Nuclear Information System (INIS)

    Sriram, S.; Kim, B.; Ghosh, P.K.; Das, M.B.; Pennsylvania State Univ., University Park; Pennsylvania State Univ., University Park

    1982-01-01

    A large number of deep levels, with energies ranging from Esub(c)-0.19eV to Esub(c)-0.9eV, have been identified and characterized using ion-implanted MESFET's on undoped and Cr-doped LEC-grown semi-insulating GaAs substrates. Measurement techniques used include deep level transient (DLTS) and steady state spectroscopic (DLSS) methods. Large capture cross-section values are obtained for levels below Esub(c)-0.5eV, possibly due to high electric field. Spectral densities of LF noise with distinct bulges have been shown to be related to deep levels. In some samples, natural deep level related oscillations have been observed and their ionization energies have been determined. (author)

  20. Preliminary analyses of the deep geoenvironmental characteristics for the deep borehole disposal of high-level radioactive waste in Korea

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Youl; Lee, Min Soo; Choi, Heui Joo; Kim, Geon Young; Kim, Kyung Su [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-06-15

    Spent fuels from nuclear power plants, as well as high-level radioactive waste from the recycling of spent fuels, should be safely isolated from human environment for an extremely long time. Recently, meaningful studies on the development of deep borehole radioactive waste disposal system in 3-5 km depth have been carried out in USA and some countries in Europe, due to great advance in deep borehole drilling technology. In this paper, domestic deep geoenvironmental characteristics are preliminarily investigated to analyze the applicability of deep borehole disposal technology in Korea. To do this, state-of-the art technologies in USA and some countries in Europe are reviewed, and geological and geothermal data from the deep boreholes for geothermal usage are analyzed. Based on the results on the crystalline rock depth, the geothermal gradient and the spent fuel types generated in Korea, a preliminary deep borehole concept including disposal canister and sealing system, is suggested.

  1. Preliminary analyses of the deep geoenvironmental characteristics for the deep borehole disposal of high-level radioactive waste in Korea

    International Nuclear Information System (INIS)

    Lee, Jong Youl; Lee, Min Soo; Choi, Heui Joo; Kim, Geon Young; Kim, Kyung Su

    2016-01-01

    Spent fuels from nuclear power plants, as well as high-level radioactive waste from the recycling of spent fuels, should be safely isolated from human environment for an extremely long time. Recently, meaningful studies on the development of deep borehole radioactive waste disposal system in 3-5 km depth have been carried out in USA and some countries in Europe, due to great advance in deep borehole drilling technology. In this paper, domestic deep geoenvironmental characteristics are preliminarily investigated to analyze the applicability of deep borehole disposal technology in Korea. To do this, state-of-the art technologies in USA and some countries in Europe are reviewed, and geological and geothermal data from the deep boreholes for geothermal usage are analyzed. Based on the results on the crystalline rock depth, the geothermal gradient and the spent fuel types generated in Korea, a preliminary deep borehole concept including disposal canister and sealing system, is suggested

  2. Hyperkinetic transient ischemic attacks preceding deep ganglionic infarction in a patient with a treated parasellar chondrosarcoma.

    Science.gov (United States)

    Ruff, Michael W; Bhargav, Adip G; English, Stephen W; Klaas, James P

    2018-02-01

    A 44-year-old right-handed female with a past medical history of parasellar chondrosarcoma status post-surgical debulking and proton beam therapy (70 Gy) three years prior to presentation experienced several hours of brief, repetitive episodes of transient hemiballism and dystonia; this was followed by abrupt onset of fixed hemiparesis and dysarthria weeks later, ipsilateral to her prior hyperkinetic movements. She was found to have total occlusion of the right middle cerebral artery with focal stenosis of the proximal right A-1 segment of the anterior cerebral artery adjacent to the remnants of the chondrosarcoma. These focal areas of narrowing were attributed to accelerated atherosclerotic disease, an adverse effect of the radiotherapy used to treat her chondrosarcoma. As treatments improve and mean survival increases for intracranial malignancy, radiation-induced atherosclerotic disease with protean manifestations such as those presented in this case may be encountered more frequently. Copyright © 2017 Elsevier Ltd. All rights reserved.

  3. Transient vibration phenomena in deep mine hoisting cables. Part 1: Mathematical model

    Science.gov (United States)

    Kaczmarczyk, S.; Ostachowicz, W.

    2003-04-01

    The classical moving co-ordinate frame approach and Hamilton's principle are employed to derive a distributed-parameter mathematical model to investigate the dynamic behaviour of deep mine hoisting cables. This model describes the coupled lateral-longitudinal dynamic response of the cables in terms of non-linear partial differential equations that accommodate the non-stationary nature of the system. Subsequently, the Rayleigh-Ritz procedure is applied to formulate a discrete mathematical model. Consequently, a system of non-linear non-stationary coupled second order ordinary differential equations arises to govern the temporal behaviour of the cable system. This discrete model with quadratic and cubic non-linear terms describes the modal interactions between lateral oscillations of the catenary cable and longitudinal oscillations of the vertical rope. It is shown that the response of the catenary-vertical rope system may feature a number of resonance phenomena, including external, parametric and autoparametric resonances. The parameters of a typical deep mine winder are used to identify the depth locations of the resonance regions during the ascending cycles with various winding velocities.

  4. Cationic effect on dye-sensitized solar cell properties using electrochemical impedance and transient absorption spectroscopy techniques

    International Nuclear Information System (INIS)

    Gupta, Ravindra Kumar; Bedja, Idriss

    2017-01-01

    Redox-couple polymer electrolytes, (poly(ethylene oxide)-succinonitrile) blend/MI-I 2 , where M  =  Li or K, were prepared by the solution cast method. Owing to the plasticizing property of K + ions, the K + ion-based electrolyte exhibited better electrical conductivity than the Li + ion-based electrolyte, which did however exhibit better photovoltaic properties. Electrochemical impedance spectroscopy revealed faster redox species diffusions and interfacial processes in the Li + ion-based dye-sensitized solar cells than in the K + ion-based ones. Transient absorption spectroscopy ascertained faster dye-regeneration by the Li + ion-based electrolyte than the K + ion-based electrolyte. (paper)

  5. Picosecond charge transport in rutile at high carrier densities studiedby transient terahertz spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Zajac, Vít; Němec, Hynek; Kužel, Petr

    2016-01-01

    Roč. 94, č. 11 (2016), 1-9, č. článku 115206. ISSN 1098-0121 R&D Projects: GA ČR GA13-12386S Institutional support: RVO:68378271 Keywords : terahertz spectroscopy * charge transport * TiO 2 * rutile * ultrafast spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.736, year: 2014

  6. Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors

    International Nuclear Information System (INIS)

    Klein, P B; Binari, S C

    2003-01-01

    This review is concerned with the characterization and identification of the deep centres that cause current collapse in nitride-based field effect transistors. Photoionization spectroscopy is an optical technique that has been developed to probe the characteristics of these defects. Measured spectral dependences provide information on trap depth, lattice coupling and on the location of the defects in the device structure. The spectrum of an individual trap may also be regarded as a 'fingerprint' of the defect, allowing the trap to be followed in response to the variation of external parameters. The basis for these measurements is derived through a modelling procedure that accounts quantitatively for the light-induced drain current increase in the collapsed device. Applying the model to fit the measured variation of drain current increase with light illumination provides an estimate of the concentrations and photoionization cross-sections of the deep defects. The results of photoionization studies of GaN metal-semiconductor field effect transistors and AlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic chemical vapour deposition (MOCVD) are presented and the conclusions regarding the nature of the deep traps responsible are discussed. Finally, recent photoionization studies of current collapse induced by short-term (several hours) bias stress in AlGaN/GaN HEMTs are described and analysed for devices grown by both MOCVD and molecular beam epitaxy. (topical review)

  7. Change in CNE boiler control level and stepback to overcome strong grid transients

    International Nuclear Information System (INIS)

    Lorenzetti, J.; Sablic, J.C.

    1991-01-01

    In Argentina the grid distribution is organized in such a way that the Embalse Power Plant is located in a place where power is produced. The most important places of power consumption are located near Buenos Aires city. Just one line connects Embalse with the consumption places. As a result of that condition the power is flowing through the interconnection line in such a way that every time a disturb cuts the line a strong power transient affects the Nuclear Power Plant. The changes in the boiler level control were done in order to avoid reactor trip, reactor stepback or turbine trip based on boiler level upsets. After several years of operation it was possible to verify that the new algorithm reduces the chances of plant outage increasing the confidence in the plant to overcome with success such transient. Every transient in the plant is analyzed in order to improve the control algorithm

  8. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

    International Nuclear Information System (INIS)

    Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

    2013-01-01

    The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T g ) and T g ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T g on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T g (800 °C) GaN films grown under QB conditions were compared to deep level spectra of high T g (1150 °C) GaN. Reducing T g , increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09 eV and 2.9 eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T g substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T g GaN growth to active layer growth can mitigate such non-radiative channels

  9. Excited-State Dynamics of Carotenoids Studied by Femtosecond Transient Absorption Spectroscopy

    International Nuclear Information System (INIS)

    Lee, Ingu; Pang, Yoonsoo; Lee, Sebok

    2014-01-01

    Carotenoids, natural antenna pigments in photosynthesis share a symmetric backbone of conjugated polyenes. Contrary to the symmetric and almost planar geometries of carotenoids, excited state structure and dynamics of carotenoids are exceedingly complex. In this paper, recent infrared and visible transient absorption measurements and excitation dependent dynamics of 8'-apo-β-caroten-8'-al and 7',7'-dicyano-7'-apo-β-carotene will be reviewed. The recent visible transient absorption measurements of 8'-apo-β-caroten-8'-al in polar and nonpolar solvents will also be introduced to emphasize the complex excited-state dynamics and unsolved problems in the S 2 and S 1 excited states

  10. Fibrillation mechanism of a model intrinsically disordered protein revealed by 2D correlation deep UV resonance Raman spectroscopy.

    Science.gov (United States)

    Sikirzhytski, Vitali; Topilina, Natalya I; Takor, Gaius A; Higashiya, Seiichiro; Welch, John T; Uversky, Vladimir N; Lednev, Igor K

    2012-05-14

    Understanding of numerous biological functions of intrinsically disordered proteins (IDPs) is of significant interest to modern life science research. A large variety of serious debilitating diseases are associated with the malfunction of IDPs including neurodegenerative disorders and systemic amyloidosis. Here we report on the molecular mechanism of amyloid fibrillation of a model IDP (YE8) using 2D correlation deep UV resonance Raman spectroscopy. YE8 is a genetically engineered polypeptide, which is completely unordered at neutral pH yet exhibits all properties of a fibrillogenic protein at low pH. The very first step of the fibrillation process involves structural rearrangements of YE8 at the global structure level without the detectable appearance of secondary structural elements. The formation of β-sheet species follows the global structural changes and proceeds via the simultaneous formation of turns and β-strands. The kinetic mechanism revealed is an important new contribution to understanding of the general fibrillation mechanism proposed for IDP.

  11. Selective interaction between Xanthophylls and Chlorophylls in LHCII probed by femtosecond transient absoprtion spectroscopy

    NARCIS (Netherlands)

    Gradinaru, C.C.; Grondelle, van R.; Amerongen, van H.

    2003-01-01

    We have performed femtosecond transient absorption measurements on trimeric light-harvesting complex II from spinach. Either chlorophyll (Chl) a (675 nm) or Chl b (650 nm) was excited, and the spectral response was probed for wavelengths longer than 470 nm. Excitation of Chl b led to instantaneous

  12. As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN

    International Nuclear Information System (INIS)

    Chen Shang; Ishikawa, Kenji; Hori, Masaru; Honda, Unhi; Shibata, Tatsunari; Matsumura, Toshiya; Tokuda, Yutaka; Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu

    2012-01-01

    Traps of energy levels E c -0.26 and E c -0.61 eV have been identified as as-grown traps in n-GaN grown by metal-organic chemical vapor deposition by using deep level transient spectroscopy of the Schottky contacts fabricated by resistive evaporation. The additional traps of E c -0.13 and E c -0.65 eV have been observed in samples whose contacts are deposited by electron-beam evaporation. An increase in concentration of the E c -0.13 and E c -0.65 eV traps when approaching the interface between the contact and the GaN film supports our argument that these traps are induced by electron-beam irradiation. Conversely, the depth profiles of as-grown traps show different profiles between several samples with increased or uniform distribution in the near surface below 50 nm. Similar profiles are observed in GaN grown on a sapphire substrate. We conclude that the growth process causes these large concentrations of as-grown traps in the near-surface region. It is speculated that the finishing step in the growth process should be an essential issue in the investigation of the surface state of GaN.

  13. The study of the deep levels of In/CdTe Schottky diode

    International Nuclear Information System (INIS)

    Kim, Hey-kyeong; Jeen, Gwangsoo; Nam, S.H.

    2000-01-01

    p-type CdTe is an important component of II-VI compound based solar cells as well as a promising substance for X- and gamma-ray detector. Despite that a lot of researches has been performed on CdTe, the manufacture of large homogeneous ingots with high resistivity (ρ) and a high value of lifetime-mobility product (μτ) still difficult. Both ρ and μτ, which determine detection properties, are strongly dependent on the impurity and defect levels of crystals. As in general, deep defect levels act as recombination centers and influence strongly the efficiency of the detector material, so information about deep levels is an essential need. To estimate deep levels of semiconductor materials, the TSC (thermally stimulated current), TSCD (thermally stimulated capacitor discharges) and admittance spectroscopic method are used. In order to study the deep levels of CdTe, the samples were taken from a CdTe-crystal grown by the vertical Bridgman method. From this boule single crystalline samples of about 0.5 mm thickness were prepared. All samples were initially p-type which was determined by the hot-probe method. In-CdTe Schottky diodes were prepared by the process of evaporation of In in the vacuum of 10 -6 Torr on surface of CdTe. The area of the deposited contact was equal to 1.626 mm 2 . As ohmic contacts, dots of Au soldered for 30 min. in temperature 160 deg C. Measurements were carried out within a 100-250 K temperature and 1-10 kHz frequency range. Related Arrhenius plots, i.e. the experimentally determined emission rates corresponding to the signal maximum divided by the square of temperature as a function of reciprocal temperature are plotted. The experimental data were best fitted by the least-square method. The fitting yielded the defect level energies E T . In this study, by using admittance spectroscopy measurements, we presented the information about the energy and concentration of the defect levels inside the gap, in order to improve the quality of

  14. Application of Moessbauer spectroscopy to the study of neptunium adsorbed on deep-sea sediments

    International Nuclear Information System (INIS)

    Bennett, B.A.; Rees, L.V.C.

    1987-03-01

    A Neptunium Moessbauer spectrometer (the first in Great Britain) was constructed and the Moessbauer spectra of NpAl Laves phase alloy obtained. Neptunium was sorbed onto a calcareous deep-sea sediment from sea water, using a successive-loading technique. Sorption appeared to be by an equilibrium reaction, and because of the low solubility of neptunium in seawater, this meant that the maximum loading that could be achieved was 8mg 237 Np/g sediment. This proved to be an adequate concentration for Moessbauer measurements and a Moessbauer spectrum was obtained. This showed that most of the neptunium was in exchange sites and not present as precipitates of neptunium compounds. It was probably in the 4+ state indicating that reduction had occurred during sorption. This work has demonstrated that Moessbauer Spectroscopy has great potential as an aid to understanding the mechanism of actinide sorption in natural systems. (author)

  15. Deep rest-frame far-UV spectroscopy of the giant Lyman α emitter 'Himiko'

    DEFF Research Database (Denmark)

    Zabl, J.; Nørgaard-Nielsen, Hans Ulrik; Fynbo, J. P. U.

    2015-01-01

    We present deep 10 h VLT/XSHOOTER spectroscopy for an extraordinarily luminous and extended Ly alpha emitter at z = 6.595 referred to asHimiko and first discussed by Ouchi et al., with the purpose of constraining the mechanisms powering its strong emission. Complementary to the spectrum, we discuss...... near-infrared imaging data from the CANDELS survey. We find neither for He II nor any metal line a significant excess, with 3 σ upper limits of 6.8, 3.1, and 5.8 x 10-18 erg s-1 cm-2 for C IV λ 1549, He II λ 1640, C III] λ 1909, respectively, assuming apertures with 200 km s-1 widths and offset by -250...

  16. Transient photoelectron spectroscopy of the dissociative Br2(1Piu) state.

    Science.gov (United States)

    Strasser, Daniel; Goulay, Fabien; Leone, Stephen R

    2007-11-14

    Photodissociation of bromine on the Br2(1Piu) state is probed with ultrafast extreme ultraviolet (53.7 nm) single-photon ionization. Time-resolved photoelectron spectra show simultaneously the depletion of ground state bromine molecules as well as the rise of Br(2P3/2) products due to 402.5 nm photolysis. A partial photoionization cross-section ratio of atomic versus molecular bromine is obtained. Transient photoelectron spectra of a dissociative wave packet on the excited state are presented in the limit of low-power-density, single-photon excitation to the dissociative state. Transient binding energy shifts of "atomic-like" photoelectron peaks are observed and interpreted as photoionization of nearly separated Br atom pairs on the Br2(1Piu) state to repulsive dissociative ionization states.

  17. Excited-State Dynamics of Carotenoids Studied by Femtosecond Transient Absorption Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Ingu; Pang, Yoonsoo [Department of Physics and Photon Science, Gwangju (Korea, Republic of); Lee, Sebok [Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of)

    2014-03-15

    Carotenoids, natural antenna pigments in photosynthesis share a symmetric backbone of conjugated polyenes. Contrary to the symmetric and almost planar geometries of carotenoids, excited state structure and dynamics of carotenoids are exceedingly complex. In this paper, recent infrared and visible transient absorption measurements and excitation dependent dynamics of 8'-apo-β-caroten-8'-al and 7',7'-dicyano-7'-apo-β-carotene will be reviewed. The recent visible transient absorption measurements of 8'-apo-β-caroten-8'-al in polar and nonpolar solvents will also be introduced to emphasize the complex excited-state dynamics and unsolved problems in the S{sub 2} and S{sub 1} excited states.

  18. Level crossings, excess times, and transient plasma–wall interactions in fusion plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Theodorsen, A., E-mail: audun.theodorsen@uit.no; Garcia, O. E., E-mail: odd.erik.garcia@uit.no [Department of Physics and Technology, UiT The Arctic University of Norway, N-9037 Tromsø (Norway)

    2016-04-15

    Based on a stochastic model for intermittent fluctuations in the boundary region of magnetically confined plasmas, an expression for the level crossing rate is derived from the joint distribution of the process and its derivative. From this the average time spent by the process above a certain threshold level is obtained. This provides novel predictions of plasma–wall interactions due to transient transport events associated with a radial motion of blob-like structures in the scrape-off layer.

  19. Deep level centers in electron-irradiated silicon crystals doped with copper at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yarykin, Nikolai [Institute of Microelectronics Technology, RAS, Chernogolovka (Russian Federation); Weber, Joerg [Technische Universitaet Dresden (Germany)

    2017-07-15

    The effect of bombardment with energetic particles on the deep-level spectrum of copper-contaminated silicon wafers is studied by space charge spectroscopy methods. The p-type FZ-Si wafers were doped with copper in the temperature range of 645-750 C and then irradiated with the 10{sup 15} cm{sup -2} fluence of 5 MeV electrons at room temperature. Only the mobile Cu{sub i} species and the Cu{sub PL} centers are detected in significant concentrations in the non-irradiated Cu-doped wafers. The properties of the irradiated samples are found to qualitatively depend on the copper in-diffusion temperature T{sub diff}. For T{sub diff} > 700 C, the irradiation partially reduces the Cu{sub i} concentration and introduces additional Cu{sub PL} centers while no standard radiation defects are detected. If T{sub diff} was below ∝700 C, the irradiation totally removes the mobile Cu{sub i} species. Instead, the standard radiation defects and their complexes with copper appear in the deep-level spectrum. A model for the defects reaction scheme during the irradiation is derived and discussed. DLTS spectrum of the Cu-contaminated and then irradiated silicon qualitatively depends on the copper in-diffusion temperature. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Ultrafast Transient Absorption Spectroscopy Investigation of Photoinduced Dynamics in Novel Donor-Acceptor Core-Shell Nanostructures for Organic Photovoltaics

    Science.gov (United States)

    Strain, Jacob; Jamhawi, Abdelqader; Abeywickrama, Thulitha M.; Loomis, Wendy; Rathnayake, Hemali; Liu, Jinjun

    2016-06-01

    Novel donor-acceptor nanostructures were synthesized via covalent synthesis and/or UV cross-linking method. Their photoinduced dynamics were investigated with ultrafast transient absorption (TA) spectroscopy. These new nanostructures are made with the strategy in mind to reduce manufacturing steps in the process of fabricating an organic photovoltaic cell. By imitating the heterojunction interface within a fixed particle domain, several fabrication steps can be bypassed reducing cost and giving more applicability to other film deposition methods. Such applications include aerosol deposition and ink-jet printing. The systems that were studied by TA spectroscopy include PDIB core, PDIB-P3HT core-shell, and PDIB-PANT core-shell which range in size from 60 to 130 nm. Within the experimentally accessible spectra range there resides a region of ground state bleaching, stimulated emission, and excited-state absorption of both neutrals and anions. Control experiments have been carried out to assign these features. At high pump fluences the TA spectra of PDIB core alone also indicate an intramolecular charge separation. The TA spectroscopy results thus far suggest that the core-shells resemble the photoinduced dynamics of a standard film although the particles are dispersed in solution, which indicates the desired outcome of the work.

  1. Spectroscopy of bound multi exciton complexes and deep centers in implanted and annealed silicon

    International Nuclear Information System (INIS)

    Babich, V.M.; Valakh, M.Ya.; Kovalchuk, V.B.; Rudko, G.Yu.; Shakhrajchuk, N.I.

    1989-01-01

    The change of silicon properties relevant to device physics caused by ion implantation and thermal annealing is studied. It is shown that in boron-doped p-Si the increase of P + ions implantation doses from 10 12 to 10 14 ions/cm 2 lead to a decrease of the broadening of boron bound exciton bands. This behaviour is caused by implantation-induced disordering of the lattice. The subsequent thermal annealing restores the intensity and the halfwidth of the above-mentioned bands and initiates the increase of the bands which correspond to excitons bond on the implanted phosphorus ions. Measurements of phosphorus bound exciton band intensities are applicable to the characterization of the process of phosphorus activation. Analysis of low energy region of luminescence spectra of heat treated samples shows that there is a correlation between the process of implanted phosphorus activation and the one of radiation defects transformation. The influence of germanium doping on the generation of thermal donors by means of spectroscopy of deep centres luminescence has been investigated. It is shown that the introduction of germanium in concentrations of 10 19 -10 20 cm -3 effectively suppresses the generation of thermal donors and deep centres under investigation. (author)

  2. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Seyidov, MirHasan Yu., E-mail: smirhasan@gyte.edu.tr; Suleymanov, Rauf A.; Mikailzade, Faik A. [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid ave. 33, Baku AZ-1143 (Azerbaijan); Kargın, Elif Orhan [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Odrinsky, Andrei P. [Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov ave. 13, Vitebsk 210717 (Belarus)

    2015-06-14

    Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles

  3. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS2 layered semiconductor

    International Nuclear Information System (INIS)

    Seyidov, MirHasan Yu.; Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

    2015-01-01

    Lanthanum-doped high quality TlInS 2 (TlInS 2 :La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS 2 :La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS 2 :La. Thermal treatments of TlInS 2 :La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10 −14 cm 2 , corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS 2 :La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10 −16 cm 2 were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles, which are originated from the charged B5

  4. Convolutional Neural Networks for Text Categorization: Shallow Word-level vs. Deep Character-level

    OpenAIRE

    Johnson, Rie; Zhang, Tong

    2016-01-01

    This paper reports the performances of shallow word-level convolutional neural networks (CNN), our earlier work (2015), on the eight datasets with relatively large training data that were used for testing the very deep character-level CNN in Conneau et al. (2016). Our findings are as follows. The shallow word-level CNNs achieve better error rates than the error rates reported in Conneau et al., though the results should be interpreted with some consideration due to the unique pre-processing o...

  5. Picosecond Transient Photoconductivity in Functionalized Pentacene Molecular Crystals Probed by Terahertz Pulse Spectroscopy

    Science.gov (United States)

    Hegmann, F. A.; Tykwinski, R. R.; Lui, K. P.; Bullock, J. E.; Anthony, J. E.

    2002-11-01

    We have measured transient photoconductivity in functionalized pentacene molecular crystals using ultrafast optical pump-terahertz probe techniques. The single crystal samples were excited using 800nm, 100fs pulses, and the change in transmission of time-delayed, subpicosecond terahertz pulses was used to probe the photoconducting state over a temperature range from 10 to 300K. A subpicosecond rise in photoconductivity is observed, suggesting that mobile carriers are a primary photoexcitation. At times longer than 4ps, a power-law decay is observed consistent with dispersive transport.

  6. Identities of the deep level defects E1/E2 in 6H silicon carbide

    International Nuclear Information System (INIS)

    Ling, C.C.; Chen, X.D.; Beling, C.D.; Fung, S.; Lam, T.W.; Lam, C.H.; Gong, M.; Weng, H.M.; Hang, D.S.

    2004-01-01

    E 1 /E 2 (E C -0.36/0.44 eV) are deep level donors generally found in ion-implanted, electron and neutron irradiated n-type 6H-SiC materials. Their configurations are controversial and have been related to a negatively charged carbon vacancy, a divacancy or a V Si -complex. With positron lifetime technique, we have identified V Si and V C V Si in the Lely grown n-type 6H-SiC sample, with V Si annealed out at 650 C. Concentration of V C V Si persists at 1400 C annealing and significantly decreased after the 1600 C annealing. Considering the deep level transient spectroscopic (DLTS) results on the neutron irradiated n-type SiC epi sample that E 1 /E 2 completely disappeared after the 1400 C annealing, E 1 /E 2 is not the V C V Si defect. With positron annihilation techniques, A. A. Rempel et al (2002) have shown the energy dependence of vacancy generated by electron irradiation. With low irradiation energy of 0.3MeV, only V C was generated and at higher energy (0.5MeV), Si vacancy was detected. With focus to find the minimum energy for generating E 1 /E 2 , we have performed DLTS studies on n-type epi 6H-SiC materials irradiated by electrons with varying energies. Our results suggest that E 1 /E 2 have microstructure related to a carbon vacancy or a carbon interstitial. (orig.)

  7. NMR paves the way for atomic level descriptions of sparsely populated, transiently formed biomolecular conformers.

    Science.gov (United States)

    Sekhar, Ashok; Kay, Lewis E

    2013-08-06

    The importance of dynamics to biomolecular function is becoming increasingly clear. A description of the structure-function relationship must, therefore, include the role of motion, requiring a shift in paradigm from focus on a single static 3D picture to one where a given biomolecule is considered in terms of an ensemble of interconverting conformers, each with potentially diverse activities. In this Perspective, we describe how recent developments in solution NMR spectroscopy facilitate atomic resolution studies of sparsely populated, transiently formed biomolecular conformations that exchange with the native state. Examples of how this methodology is applied to protein folding and misfolding, ligand binding, and molecular recognition are provided as a means of illustrating both the power of the new techniques and the significant roles that conformationally excited protein states play in biology.

  8. Using Deep UV Raman Spectroscopy to Identify In Situ Microbial Activity

    Science.gov (United States)

    Sapers, H. M.; Wanger, G.; Amend, J.; Orphan, V. J.; Bhartia, R.

    2017-12-01

    Microbial communities living in close association with lithic substrates play a critical role in biogeochemical cycles. Understanding the interactions between microorganisms and their abiotic substrates requires knowledge of microbial activity. Identifying active cells adhered to complex environmental substrates, especially in low biomass systems, remains a challenge. Stable isotope probing (SIP) provides a means to trace microbial activity in environmental systems. Active members of the community take up labeled substrates and incorporate the labels into biomolecules that can be detected through downstream analyses. Here we show for the first time that Deep UV (248 nm) Raman spectroscopy can differentiate microbial cells labeled with stable isotopes. Previous studies have used Raman spectroscopy with a 532 nm source to identify active bacterial cells by measuring a Raman shift between peaks corresponding to amino acids incorporating 13C compared to controls. However, excitation at 532 nm precludes detection on complex substrates due to high autofluorescence of native minerals. Excitation in the DUV range offers non-destructive imaging on mineral surfaces - retaining critical contextual information. We prepared cultures of E. coli grown in 50 atom% 13C glucose spotted onto Al wafers to test the ability of DUV Raman spectroscopy to differentiate labeled and unlabeled cells. For the first time, we are able to demonstrate a distinct and repeatable shift between cells grown in labeled media and unlabeled media when imaged on Al wafers with DUV Raman spectroscopy. The Raman spectra are dominated by the characteristic Raman bands of guanine. The dominant marker peak for guanine attributed to N7-C8 and C8-N9 ring stretching and C8-H in-plane bending, is visible at 1480 cm-1 in the unlabeled cells and is blue-shifted by 20 wavenumbers to 1461 cm-1 in the labeled cells. The ability of DUV Raman to effectively identify regions containing cells that have incorporated isotopic

  9. Capacitance spectroscopy on n-type GaNAs/GaAs embedded quantum structure solar cells

    Science.gov (United States)

    Venter, Danielle; Bollmann, Joachim; Elborg, Martin; Botha, J. R.; Venter, André

    2018-04-01

    In this study, both deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS) have been used to study the properties of electrically active deep level centers present in GaNAs/GaAs quantum wells (QWs) embedded in p-i-n solar cells. The structures were grown by molecular beam epitaxy (MBE). In particular, the electrical properties of samples with Si (n-type) doping of the QWs were investigated. DLTS revealed four deep level centers in the material, whereas only three were detected by AS. NextNano++ simulation software was used to model the sample band-diagrams to provide reasoning for the origin of the signals produced by both techniques.

  10. Surface-Level Diversity and Decision-Making in Groups: When Does Deep-Level Similarity Help?

    OpenAIRE

    2006-01-01

    Abstract We examined how surface-level diversity (based on race) and deep-level similarities influenced three-person decision-making groups on a hidden-profile task. Surface-level homogeneous groups perceived their information to be less unique and spent less time on the task than surface-level diverse groups. When the groups were given the opportunity to learn about their deep-level similarities prior to t...

  11. J-Specific Dynamics in AN Optical Centrifuge Using Transient IR Spectroscopy

    Science.gov (United States)

    Murray, Matthew J.; Liu, Qingnan; Toro, Carlos; Mullin, Amy S.

    2013-06-01

    Quantum state-specific dynamics are reported for a number of CO_{2} rotational states in an optical centrifuge. The optical centrifuge results from combining oppositely-chirped ultrafast laser pulses and spinning CO_{2} molecules into extremely high rotational states with J≈220. Collisions of centrifuged molecules induce depletion of population from low-J states (J=0 and 36) and lead to appearance of population in high J states (J=36, 54 and 76). Transient Doppler-broadened line profiles for individual CO_{2} states reveal that the depletion populations have narrow velocity distributions with translational temperatures significantly colder than 300 K. Molecules that appear in the higher rotational states have broad velocity distributions, showing that both rotational and translational energy are imparted in collisions of the centrifuged molecules. These results show that substantial amounts of angular momentum persist after many collisions and that translational energy exchange continues for several thousand collisions.

  12. Direct Observation of Ultrafast Hole Injection from Lead Halide Perovskite by Differential Transient Transmission Spectroscopy.

    Science.gov (United States)

    Ishioka, Kunie; Barker, Bobby G; Yanagida, Masatoshi; Shirai, Yasuhiro; Miyano, Kenjiro

    2017-08-17

    Efficient charge separation at the interfaces of the perovskite with the carrier transport layers is crucial for perovskite solar cells to achieve high power conversion efficiency. We present a systematic experimental study on the hole injection dynamics from MAPbI 3 perovskite to three typical hole transport materials (HTMs). We extract the carrier dynamics directly related to the hole injection by employing a pump light with short absorption depth and comparing the transient transmission signals excited on the two sides of the sample. The differential transmission signals reveal the hole injections to PTAA and PEDOT:PSS to be complete within 1 and 2 ps, respectively, and that to NiO x to exhibit an additional slow process on a 40 ps time scale. The obtained injection dynamics are discussed in comparison with the device performance of the solar cells containing the same MAPbI 3 /HTM interfaces.

  13. Decadal trends in deep ocean salinity and regional effects on steric sea level

    Science.gov (United States)

    Purkey, S. G.; Llovel, W.

    2017-12-01

    We present deep (below 2000 m) and abyssal (below 4000 m) global ocean salinity trends from the 1990s through the 2010s and assess the role of deep salinity in local and global sea level budgets. Deep salinity trends are assessed using all deep basins with available full-depth, high-quality hydrographic section data that have been occupied two or more times since the 1980s through either the World Ocean Circulation Experiment (WOCE) Hydrographic Program or the Global Ship-Based Hydrographic Investigations Program (GO-SHIP). All salinity data is calibrated to standard seawater and any intercruise offsets applied. While the global mean deep halosteric contribution to sea level rise is close to zero (-0.017 +/- 0.023 mm/yr below 4000 m), there is a large regional variability with the southern deep basins becoming fresher and northern deep basins becoming more saline. This meridional gradient in the deep salinity trend reflects different mechanisms driving the deep salinity variability. The deep Southern Ocean is freshening owing to a recent increased flux of freshwater to the deep ocean. Outside of the Southern Ocean, the deep salinity and temperature changes are tied to isopycnal heave associated with a falling of deep isopycnals in recent decades. Therefore, regions of the ocean with a deep salinity minimum are experiencing both a halosteric contraction with a thermosteric expansion. While the thermosteric expansion is larger in most cases, in some regions the halosteric compensates for as much as 50% of the deep thermal expansion, making a significant contribution to local sea level rise budgets.

  14. On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation

    Science.gov (United States)

    Schmidt, Matthias; Wenckstern, Holger von; Pickenhain, Rainer; Grundmann, Marius

    2012-09-01

    Electronic defect states in a n-type conducting zinc oxide thin film sample were investigated by means of space charge spectroscopy focussing on levels in the midgap region as well as on hole traps. To overcome the experimental difficulties arising from the wide bandgap and the lack of p-type conduction, optical excitation was employed to measure the emission of trapped charge carriers from these levels. Therefore - besides deep-level transient spectroscopy measurements - photo-capacitance, optically chopped photo-current, minority carrier transient spectroscopy, and optical capacitance-voltage experiments were conducted. In doing so, a midgap level labelled T4, and hole traps labelled TH1 and TH2 were detected. In the case of T4 and TH1 the photo-ionisation cross-section spectra were determined.

  15. Amorphous surface layer versus transient amorphous precursor phase in bone - A case study investigated by solid-state NMR spectroscopy.

    Science.gov (United States)

    Von Euw, Stanislas; Ajili, Widad; Chan-Chang, Tsou-Hsi-Camille; Delices, Annette; Laurent, Guillaume; Babonneau, Florence; Nassif, Nadine; Azaïs, Thierry

    2017-09-01

    phosphate (ACP) environments could also arise from a transient amorphous precursor phase of apatite. Here, we provide an NMR spectroscopy methodology to reveal the origin of these ACP environments in bone mineral or in biomimetic apatite. The 1 H magnetization exchange between protons arising from amorphous and crystalline domains shows unambiguously that an ACP layer coats the apatitic crystalline core of bone et biomimetic apatite platelets. Copyright © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  16. Excited-State Dynamics of Melamine and Its Lysine Derivative Investigated by Femtosecond Transient Absorption Spectroscopy

    Directory of Open Access Journals (Sweden)

    Yuyuan Zhang

    2016-11-01

    Full Text Available Melamine may have been an important prebiotic information carrier, but its excited-state dynamics, which determine its stability under UV radiation, have never been characterized. The ability of melamine to withstand the strong UV radiation present on the surface of the early Earth is likely to have affected its abundance in the primordial soup. Here, we studied the excited-state dynamics of melamine (a proto-nucleobase and its lysine derivative (a proto-nucleoside using the transient absorption technique with a UV pump, and UV and infrared probe pulses. For melamine, the excited-state population decays by internal conversion with a lifetime of 13 ps without coupling significantly to any photochemical channels. The excited-state lifetime of the lysine derivative is slightly longer (18 ps, but the dominant deactivation pathway is otherwise the same as for melamine. In both cases, the vast majority of excited molecules return to the electronic ground state on the aforementioned time scales, but a minor population is trapped in a long-lived triplet state.

  17. Using Deep Learning Techniques to Forecast Environmental Consumption Level

    Directory of Open Access Journals (Sweden)

    Donghyun Lee

    2017-10-01

    Full Text Available Artificial intelligence is a promising futuristic concept in the field of science and technology, and is widely used in new industries. The deep-learning technology leads to performance enhancement and generalization of artificial intelligence technology. The global leader in the field of information technology has declared its intention to utilize the deep-learning technology to solve environmental problems such as climate change, but few environmental applications have so far been developed. This study uses deep-learning technologies in the environmental field to predict the status of pro-environmental consumption. We predicted the pro-environmental consumption index based on Google search query data, using a recurrent neural network (RNN model. To verify the accuracy of the index, we compared the prediction accuracy of the RNN model with that of the ordinary least square and artificial neural network models. The RNN model predicts the pro-environmental consumption index better than any other model. We expect the RNN model to perform still better in a big data environment because the deep-learning technologies would be increasingly sophisticated as the volume of data grows. Moreover, the framework of this study could be useful in environmental forecasting to prevent damage caused by climate change.

  18. Probing Transient Valence Orbital Changes with Picosecond Valence-to-Core X-ray Emission Spectroscopy

    DEFF Research Database (Denmark)

    March, Anne Marie; Assefa, Tadesse A.; Boemer, Christina

    2017-01-01

    We probe the dynamics of valence electrons in photoexcited [Fe(terpy)2]2+ in solution to gain deeper insight into the Fe ligand bond changes. We use hard X-ray emission spectroscopy (XES), which combines element specificity and high penetration with sensitivity to orbital structure, making...... valence orbitals to the nascent core-hole. Vtc-XES offers particular insight into the molecular orbitals directly involved in the light-driven dynamics; a change in the metal ligand orbital overlap results in an intensity reduction and a blue energy shift in agreement with our theoretical calculations...... and more subtle features at the highest energies reflect changes in the frontier orbital populations....

  19. The calculation of deep levels in semiconductors by using a recursion method for super-cells

    International Nuclear Information System (INIS)

    Wong Yongliang.

    1987-01-01

    The paper presents the theory of deep levels in semiconductors, the super-cell approach to the theory of deep level impurities, the calculation of band structure by using the tight-binding method and the recursion method used to study the defects in the presence of lattice relaxation and extended defect complexes. 47 refs

  20. Quantitative methods for structural characterization of proteins based on deep UV resonance Raman spectroscopy.

    Science.gov (United States)

    Shashilov, Victor A; Sikirzhytski, Vitali; Popova, Ludmila A; Lednev, Igor K

    2010-09-01

    Here we report on novel quantitative approaches for protein structural characterization using deep UV resonance Raman (DUVRR) spectroscopy. Specifically, we propose a new method combining hydrogen-deuterium (HD) exchange and Bayesian source separation for extracting the DUVRR signatures of various structural elements of aggregated proteins including the cross-beta core and unordered parts of amyloid fibrils. The proposed method is demonstrated using the set of DUVRR spectra of hen egg white lysozyme acquired at various stages of HD exchange. Prior information about the concentration matrix and the spectral features of the individual components was incorporated into the Bayesian equation to eliminate the ill-conditioning of the problem caused by 100% correlation of the concentration profiles of protonated and deuterated species. Secondary structure fractions obtained by partial least squares (PLS) and least squares support vector machines (LS-SVMs) were used as the initial guess for the Bayessian source separation. Advantages of the PLS and LS-SVMs methods over the classical least squares calibration (CLSC) are discussed and illustrated using the DUVRR data of the prion protein in its native and aggregated forms. Copyright (c) 2010 Elsevier Inc. All rights reserved.

  1. Improved Fast, Deep Record Length, Time-Resolved Visible Spectroscopy of Plasmas Using Fiber Grids

    Science.gov (United States)

    Brockington, S.; Case, A.; Cruz, E.; Williams, A.; Witherspoon, F. D.; Horton, R.; Klauser, R.; Hwang, D.

    2017-10-01

    HyperV Technologies is developing a fiber-coupled, deep record-length, low-light camera head for performing high time resolution spectroscopy on visible emission from plasma events. By coupling the output of a spectrometer to an imaging fiber bundle connected to a bank of amplified silicon photomultipliers, time-resolved spectroscopic imagers of 100 to 1,000 pixels can be constructed. A second generation prototype 32-pixel spectroscopic imager employing this technique was constructed and successfully tested at the University of California at Davis Compact Toroid Injection Experiment (CTIX). Pixel performance of 10 Megaframes/sec with record lengths of up to 256,000 frames ( 25.6 milliseconds) were achieved. Pixel resolution was 12 bits. Pixel pitch can be refined by using grids of 100 μm to 1000 μm diameter fibers. Experimental results will be discussed, along with future plans for this diagnostic. Work supported by USDOE SBIR Grant DE-SC0013801.

  2. MUSE spectroscopy and deep observations of a unique compact JWST target, lensing cluster CLIO

    Science.gov (United States)

    Griffiths, Alex; Conselice, Christopher J.; Alpaslan, Mehmet; Frye, Brenda L.; Diego, Jose M.; Zitrin, Adi; Yan, Haojing; Ma, Zhiyuan; Barone-Nugent, Robert; Bhatawdekar, Rachana; Driver, Simon P.; Robotham, Aaron S. G.; Windhorst, Rogier A.; Wyithe, J. Stuart B.

    2018-04-01

    We present the results of a VLT MUSE/FORS2 and Spitzer survey of a unique compact lensing cluster CLIO at z = 0.42, discovered through the GAMA survey using spectroscopic redshifts. Compact and massive clusters such as this are understudied, but provide a unique prospective on dark matter distributions and for finding background lensed high-z galaxies. The CLIO cluster was identified for follow-up observations due to its almost unique combination of high-mass and dark matter halo concentration, as well as having observed lensing arcs from ground-based images. Using dual band optical and infra-red imaging from FORS2 and Spitzer, in combination with MUSE optical spectroscopy we identify 89 cluster members and find background sources out to z = 6.49. We describe the physical state of this cluster, finding a strong correlation between environment and galaxy spectral type. Under the assumption of an NFW profile, we measure the total mass of CLIO to be M200 = (4.49 ± 0.25) × 1014 M⊙. We build and present an initial strong-lensing model for this cluster, and measure a relatively low intracluster light (ICL) fraction of 7.21 ± 1.53 per cent through galaxy profile fitting. Due to its strong potential for lensing background galaxies and its low ICL, the CLIO cluster will be a target for our 110 h James Webb Space Telescope `Webb Medium-Deep Field' (WMDF) GTO program.

  3. In vivo measurements of cerebral metabolic abnormalities by proton spectroscopy after a transient ischemic attack revealing an internal carotid stenosis > 70%; Anomalies metaboliques cerebrales mesurees in vivo par la spectroscopie du proton dans les accidents ischemiques transitoires revelant une stenose de la carotide interne superieure a 70%

    Energy Technology Data Exchange (ETDEWEB)

    Giroud, M.; Becker, F.; Lemesle, M.; Walker, P.; Guy, F.; Martin, D.; Baudouin, N.; Brunotte, F.; Dumas, R. [Centre Hospitalier Universitaire, 21 -Dijon (France)

    1996-06-01

    Aims: The aim of this work is to look for cerebral metabolic abnormalities within the first 3 days after a transient ischemic attack revealing an internal carotid stenosis > 70 %. Methods: Five patients with a transient ischemic attack lasting between 30 and 180 minutes, affecting sensory and motor brachio-facial territory, with or without aphasia. Were studied. A CT-scan, an EEG, a cervical Doppler ultrasound, a standard arteriography, a magnetic resonance imaging and a proton spectroscopy were performed within the cerebral area affected by the transient ischemic attack. We measured 2 markers: N-acetyl-aspartate, the marker of the neuronal mass, and lactate, the marker of anaerobe metabolism. In each case, a contralateral internal stenosis was diagnosed by cervical Doppler ultrasound and standard arteriography. No cerebral infarction was observed. Results: With the affected cerebral area defined according to clinical and EEG features, proton spectroscopy showed a significant rise of lactate, without any change in N-acetyl-aspartate levels. Conclusions: Within the first 3 days after a transient ischemic attack, there is a significant risk of lactate inside the affected cerebral area. This change may reflect a localized and transient hypoperfusion, but long enough to induce a rise of lactate but not sufficient to produce a cerebral infarct. This area is probably at risk to induce cerebral infarct. This data lead us to study the metabolic change induced by the asymptomatic internal carotid stenosis. (authors). 18 refs.

  4. Inversion of Qubit Energy Levels in Qubit-Oscillator Circuits in the Deep-Strong-Coupling Regime

    Science.gov (United States)

    Yoshihara, F.; Fuse, T.; Ao, Z.; Ashhab, S.; Kakuyanagi, K.; Saito, S.; Aoki, T.; Koshino, K.; Semba, K.

    2018-05-01

    We report on experimentally measured light shifts of superconducting flux qubits deep-strongly coupled to L C oscillators, where the coupling constants are comparable to the qubit and oscillator resonance frequencies. By using two-tone spectroscopy, the energies of the six lowest levels of each circuit are determined. We find huge Lamb shifts that exceed 90% of the bare qubit frequencies and inversions of the qubits' ground and excited states when there are a finite number of photons in the oscillator. Our experimental results agree with theoretical predictions based on the quantum Rabi model.

  5. Multi-level adaptive simulation of transient two-phase flow in heterogeneous porous media

    KAUST Repository

    Chueh, C.C.

    2010-10-01

    An implicit pressure and explicit saturation (IMPES) finite element method (FEM) incorporating a multi-level shock-type adaptive refinement technique is presented and applied to investigate transient two-phase flow in porous media. Local adaptive mesh refinement is implemented seamlessly with state-of-the-art artificial diffusion stabilization allowing simulations that achieve both high resolution and high accuracy. Two benchmark problems, modelling a single crack and a random porous medium, are used to demonstrate the robustness of the method and illustrate the capabilities of the adaptive refinement technique in resolving the saturation field and the complex interaction (transport phenomena) between two fluids in heterogeneous media. © 2010 Elsevier Ltd.

  6. Gamma-ray spectroscopy of the neutron-rich Ni region through heavy-ion deep-inelastic collisions

    International Nuclear Information System (INIS)

    Ishii, T.; Asai, M.; Matsuda, M.; Ichikawa, S.; Makishima, A.; Hossain, I.; Kleinheinz, P.; Ogawa, M.

    2002-01-01

    Nuclei in the neutron-rich Ni region have been studied by γ-ray spectroscopy. Gamma-rays emitted from isomers, with T 1/2 >1 ns, produced in heavy-ion deep-inelastic collisions were measured with an isomer-scope. The nuclear structure of the doubly magic 68 Ni and its neighbor 69,71 Cu is discussed on the basis of the shell model. Future experiments for more neutron-rich Ni nuclei are also viewed. (orig.)

  7. Gamma-ray spectroscopy of the neutron-rich Ni region through heavy-ion deep-inelastic collisions

    Science.gov (United States)

    Ishii, T.; Asai, M.; Makishima, A.; Hossain, I.; Kleinheinz, P.; Ogawa, M.; Matsuda, M.; Ichikawa, S.

    Nuclei in the neutron-rich Ni region have been studied by γ-ray spectroscopy. Gamma-rays emitted from isomers, with T1/2 > 1 ns, produced in heavy-ion deep-inelastic collisions were measured with an isomer-scope. The nuclear structure of the doubly magic 68Ni and its neighbor 69,71Cu is discussed on the basis of the shell model. Future experiments for more neutron-rich Ni nuclei are also viewed.

  8. Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Armstrong, Andrew M; Allerman, Andrew A; Baca, Albert G; Sanchez, Carlos A

    2013-01-01

    The influence of deep levels defects located in highly resistive GaN:C buffers on the on-resistance (R ON ) and threshold voltage (V th ) of AlGaN/GaN high electron mobility transistors (HEMTs) power devices was studied by a combined photocapacitance deep level optical spectroscopy (C-DLOS) and photoconductance deep level optical spectroscopy (G-DLOS) methodology as a function of electrical stress. Two carbon-related deep levels at 1.8 and 2.85 eV below the conduction band energy minimum were identified from C-DLOS measurements under the gate electrode. It was found that buffer-related defects under the gate shifted V th positively by approximately 10%, corresponding to a net areal density of occupied defects of 8 × 10 12 cm −2 . The effect of on-state drain stress and off-state gate stress on buffer deep level occupancy and R ON was also investigated via G-DLOS. It was found that the same carbon-related deep levels observed under the gate were also active in the access region. Off-state gate stress produced significantly more trapping and degradation of R ON (∼140%) compared to on-state drain stress (∼75%). Greater sensitivity of R ON to gate stress was explained by a more sharply peaked lateral distribution of occupied deep levels between the gate and drain compared to drain stress. The overall greater sensitivity of R ON compared to V th to buffer defects suggests that electron trapping is significantly greater in the access region compared to under the gate, likely due to the larger electric fields in the latter region. (invited paper)

  9. Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

    International Nuclear Information System (INIS)

    Armstrong, Andrew M.; Moseley, Michael W.; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan J.

    2015-01-01

    The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al 0.7 Ga 0.3 N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, including thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al 0.7 Ga 0.3 N

  10. Deep Levels of Processing Elicit a Distinctiveness Heuristic: Evidence from the Criterial Recollection Task

    Science.gov (United States)

    Gallo, David A.; Meadow, Nathaniel G.; Johnson, Elizabeth L.; Foster, Katherine T.

    2008-01-01

    Thinking about the meaning of studied words (deep processing) enhances memory on typical recognition tests, relative to focusing on perceptual features (shallow processing). One explanation for this levels-of-processing effect is that deep processing leads to the encoding of more distinctive representations (i.e., more unique semantic or…

  11. Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

    Science.gov (United States)

    Golovynskyi, S.; Datsenko, O.; Seravalli, L.; Kozak, O.; Trevisi, G.; Frigeri, P.; Babichuk, I. S.; Golovynska, I.; Qu, Junle

    2017-12-01

    Deep levels in metamorphic InAs/In x Ga1-x As quantum dot (QD) structures are studied with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and photoluminescence (PL) spectroscopy and compared with data from pseudomorphic InGaAs/GaAs QDs investigated previously by the same techniques. We have found that for a low content of indium (x = 0.15) the trap density in the plane of self-assembled QDs is comparable or less than the one for InGaAs/GaAs QDs. However, the trap density increases with x, resulting in a rise of the defect photoresponse in PC and TSC spectra as well as a reduction of the QD PL intensity. The activation energies of the deep levels and some traps correspond to known defect complexes EL2, EL6, EL7, EL9, and EL10 inherent in GaAs, and three traps are attributed to the extended defects, located in InGaAs embedding layers. The rest of them have been found as concentrated mainly close to QDs, as their density in the deeper InGaAs buffers is much lower. This an important result for the development of light-emitting and light-sensitive devices based on metamorphic InAs QDs, as it is a strong indication that the defect density is not higher than in pseudomorphic InAs QDs.

  12. The Hanle effect and level-crossing spectroscopy

    CERN Document Server

    Strumia, Franco

    1991-01-01

    I am most pleased and, in a way, I feel honored to write the Foreword for the book The Hanle Effect and Level-Crossing Spectroscopy, which covers such a very wide range of applications not only in the initial areas of atomic and molecular physics, but also in solid state physics, solar physics, laser physics, and gravitational metrology. To link these fields together in a coherent way has been the merit of the editors of the book, who attracted most distinguished authors for writing the chapters. In retrospect to Hanle's discovery of quantum mechanical coherence between two quantum states about 65 years ago, this book demonstrates the enormous impact and central importance the effect has had, and most vividly still has, on modern physics. On the other hand, the concept of quantum mechanical coherence, which is an outgrowth of the linear super­ position principle of quantum states, has been evident through a consider­ able number of experimental methods beyond the original Hanle effect; some of these methods...

  13. Core level photoelectron spectroscopy probed heterogeneous xenon/neon clusters

    International Nuclear Information System (INIS)

    Pokapanich, Wandared; Björneholm, Olle; Öhrwall, Gunnar; Tchaplyguine, Maxim

    2017-01-01

    Binary rare gas clusters; xenon and neon which have a significant contrariety between sizes, produced by a co-expansion set up and have been studied using synchrotron radiation based x-ray photoelectron spectroscopy. Concentration ratios of the heterogeneous clusters; 1%, 3%, 5% and 10% were controlled. The core level spectra were used to determine structure of the mixed cluster and analyzed by considering screening mechanisms. Furthermore, electron binding energy shift calculations demonstrated cluster aggregation models which may occur in such process. The results showed that in the case of low mixing ratios of 3% and 5% of xenon in neon, the geometric structures exhibit xenon in the center and xenon/neon interfaced in the outer shells. However, neon cluster vanished when the concentration of xenon was increased to 10%. - Highlights: • Co-expansion setup is suitable for producing binary Xe/Ne clusters. • Appropriate temperature, pressure, and mixing ratios should be strictly controlled. • Low mixing ratio, Xe formed in the core and Xe/Ne interfacing in the outer shell. • High mixing ratio, only pure Xe clusters were detected.

  14. Shell-Tunneling Spectroscopy of the Single-Particle Energy Levels of Insulating Quantum Dots

    NARCIS (Netherlands)

    Bakkers, E.P.A.M.; Hens, Z.; Zunger, A.; Franceschetti, A; Kouwenhoven, L.P.; Gurevich, L.; Vanmaekelbergh, D.

    2001-01-01

    The energy levels of CdSe quantum dots are studied by scanning tunneling spectroscopy. By varying the tip-dot distance, we switch from "shell-filling" spectroscopy (where electrons accumulate in the dot and experience mutual repulsion) to "shell-tunneling" spectroscopy (where electrons tunnel, one

  15. A deep level set method for image segmentation

    OpenAIRE

    Tang, Min; Valipour, Sepehr; Zhang, Zichen Vincent; Cobzas, Dana; MartinJagersand

    2017-01-01

    This paper proposes a novel image segmentation approachthat integrates fully convolutional networks (FCNs) with a level setmodel. Compared with a FCN, the integrated method can incorporatesmoothing and prior information to achieve an accurate segmentation.Furthermore, different than using the level set model as a post-processingtool, we integrate it into the training phase to fine-tune the FCN. Thisallows the use of unlabeled data during training in a semi-supervisedsetting. Using two types o...

  16. Transient simulation of groundwater levels within a sandbar of the Colorado River, Marble Canyon, Arizona, 2004

    Science.gov (United States)

    Sabol, Thomas A.; Springer, Abraham E.

    2013-01-01

    Seepage erosion and mass failure of emergent sandy deposits along the Colorado River in Grand Canyon National Park, Arizona, are a function of the elevation of groundwater in the sandbar, fluctuations in river stage, the exfiltration of water from the bar face, and the slope of the bar face. In this study, a generalized three-dimensional numerical model was developed to predict the time-varying groundwater level, within the bar face region of a freshly deposited eddy sandbar, as a function of river stage. Model verification from two transient simulations demonstrates the ability of the model to predict groundwater levels within the onshore portion of the sandbar face across a range of conditions. Use of this generalized model is applicable across a range of typical eddy sandbar deposits in diverse settings. The ability to predict the groundwater level at the onshore end of the sandbar face is essential for both physical and numerical modeling efforts focusing on the erosion and mass failure of eddy sandbars downstream of Glen Canyon Dam along the Colorado River.

  17. Effect of deep native defects on ultrasound propagation in TlInS{sub 2} layered crystal

    Energy Technology Data Exchange (ETDEWEB)

    Seyidov, MirHasan Yu., E-mail: smirhasan@gtu.edu.tr [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid Avenue, 33, AZ-1143 Baku (Azerbaijan); Suleymanov, Rauf A. [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid Avenue, 33, AZ-1143 Baku (Azerbaijan); Odrinsky, Andrei P. [Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov Avenue 13, Vitebsk 210717 (Belarus); Kırbaş, Cafer [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); The Scientific and Technological Research Council of Turkey, National Metrology Institute (TUBITAK UME), PQ 54 41470 Gebze, Kocaeli (Turkey)

    2016-09-15

    We have investigated p-type semiconductor–ferroelectric TlInS{sub 2} by means of Photo-Induced Current Transient Spectroscopy (PICTS) technique in the temperature range 77–350 K for the detection of native deep defect levels in TlInS{sub 2}. Five native deep defect levels were detected and their energy levels and capture cross sections were evaluated. Focusing on these data, the influence of these defects on the longitudinal and transverse ultrasound waves propagation as well as the effect of electric field on ultrasound waves were studied at different temperatures. The acoustic properties were investigated by the pulse-echo method. The direct contribution of thermally activated charged defects to the acoustic properties of TlInS{sub 2} was demonstrated. The key role of charged native deep level defects in elastic properties of TlInS{sub 2} was shown.

  18. Effect of antimony on the deep-level traps in GaInNAsSb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Muhammad Monirul, E-mail: islam.monir.ke@u.tsukuba.ac.jp; Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro ku, Tokyo 153-8904 (Japan); Sakurai, Takeaki; Akimoto, Katsuhiro [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)

    2014-09-15

    Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41 eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

  19. Reconciling the sea level record of the last deglaciation with the δ18O spectra from deep sea cores

    International Nuclear Information System (INIS)

    Bard, Edouard; Columbia Univ., Palisades, NY; Arnold, Maurice; Duplessy, J.-C.

    1991-01-01

    In this paper we use the oxygen isotope record as a transient tracer to study palaeoceanography during the last deglaciation. By using 14 C and 18 O data obtained on four deep sea sediment cores, we show the presence of a measurable lag between the deglacial δ 18 O signal observed in the deep Atlantic and the deep Indo-Pacific oceans. Our study confirms that the major meltwater discharge occurred via the North Atlantic and that the thermohaline circulation was operating during the deglacial transition. (Author)

  20. The Effects of Test Anxiety on Learning at Superficial and Deep Levels of Processing.

    Science.gov (United States)

    Weinstein, Claire E.; And Others

    1982-01-01

    Using a deep-level processing strategy, low test-anxious college students performed significantly better than high test-anxious students in learning a paired-associate word list. Using a superficial-level processing strategy resulted in no significant difference in performance. A cognitive-attentional theory and test anxiety mechanisms are…

  1. Uncertainty of simulated groundwater levels arising from stochastic transient climate change scenarios

    Science.gov (United States)

    Goderniaux, Pascal; Brouyère, Serge; Blenkinsop, Stephen; Burton, Aidan; Fowler, Hayley; Dassargues, Alain

    2010-05-01

    applied not only to the mean of climatic variables, but also across the statistical distributions of these variables. This is important as these distributions are expected to change in the future, with more extreme rainfall events, separated by longer dry periods. (2) The novel approach used in this study can simulate transient climate change from 2010 to 2085, rather than time series representative of a stationary climate for the period 2071-2100. (3) The weather generator is used to generate a large number of equiprobable climate change scenarios for each RCM, representative of the natural variability of the weather. All of these scenarios are applied as input to the Geer basin model to assess the projected impact of climate change on groundwater levels, the uncertainty arising for different RCM projections and the uncertainty linked to natural climatic variability. Using the output results from all scenarios, 95% confidence intervals are calculated for each year and month between 2010 and 2085. The climate change scenarios for the Geer basin model predict hotter and drier summers and warmer and wetter winters. Considering the results of this study, it is very likely that groundwater levels and surface flow rates in the Geer basin will decrease by the end of the century. This is of concern because it also means that groundwater quantities available for abstraction will also decrease. However, this study also shows that the uncertainty of these projections is relatively large compared to the projected changes so that it remains difficult to confidently determine the magnitude of the decrease. The use and combination of an integrated surface - subsurface model and stochastic climate change scenarios has never been used in previous climate change impact studies on groundwater resources. It constitutes an innovation and is an important tool for helping water managers to take decisions.

  2. Prevalence of Congenital Hypothyroidism and Transient Increased Levels of TSH in Yazd Province

    Directory of Open Access Journals (Sweden)

    H Shojaeifar

    2008-10-01

    Full Text Available Introduction: Congenital hypothyroidism is one of the most preventable causes of mental retardation. Worldwide, incidences vary from 1:3000 to 1:4000 and mean incidence in Iran is estimated to be 1:1000. Neonatal screening and early treatment within first 2 weeks of neonatal period can prevent neurocognitive deficits. We aimed to study the incidence of CH and increased levels of TSH in Yazd province and collect data describing the disease status and designing first and second levels of preventive interventions. Methods: This descriptive analytic study was performed by census cross sectional method on 13022 neonates in Yazd province in 2006-2007(March 2006- March 2007 including 6495 females and 6527 males. Sampling was done (within the first 3-5 days of life by lancet sticking of neonatal heel. After transfer of 3 blood drops over filter papers, the TSH level was measured. If the TSH level was equal or higher than 5 mu/l, additional confirmation tests were done. Neonates were diagnosed according to serum confirmation test (TSH10 mu/l or T4<6.5g/dl and underwent treatment according to national guidelines. Data was analyzed by SPSS software. Results: Total number of patients was 45, including 25 males (55.5% and 20 females (44.5%. Prevalence in males, females and overall was consecutively, 1:261, 1:325 and 1:289, but this difference was not statistically significant. Prevalence in urban and rural areas was 1:315 and 1:216, but the difference was statistically not significant. The prevalence during spring, summer, autumn& winter was 1:95, 1:250, 1:1934 and 1:369, respectively, that was statistically significant. Mean age at sampling was 7.2 days, mean TSH level 2.3 mu/l and mean age of mothers was 25.8 years. Conclusions: Incidence of CH and transient increased levels of TSH in Yazd province is significantly higher than national and worldwide levels that necessitate the constancy and reinforcement of neonatal screening program. On the other

  3. Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Hellman, Hal

    1968-01-01

    This booklet discusses spectroscopy, the study of absorption of radiation by matter, including X-ray, gamma-ray, microwave, mass spectroscopy, as well as others. Spectroscopy has produced more fundamental information to the study of the detailed structure of matter than any other tools.

  4. Spectroscopy

    CERN Document Server

    Walker, S

    1976-01-01

    The three volumes of Spectroscopy constitute the one comprehensive text available on the principles, practice and applications of spectroscopy. By giving full accounts of those spectroscopic techniques only recently introduced into student courses - such as Mössbauer spectroscopy and photoelectron spectroscopy - in addition to those techniques long recognised as being essential in chemistry teaching - sucha as e.s.r. and infrared spectroscopy - the book caters for the complete requirements of undergraduate students and at the same time provides a sound introduction to special topics for graduate students.

  5. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

    2015-07-28

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  6. Deep geologic repository for low and intermediate radioactive level waste in Canada

    International Nuclear Information System (INIS)

    Liu Jianqin; Li Honghui; Sun Qinghong; Yang Zhongtian

    2012-01-01

    Ontario Power Generation (OPG) is undergoing a project for the long-term management of low and intermediate level waste (LILW)-a deep geologic repository (DGR) project for low and intermediate level waste. The waste source term disposed, geologic setting, repository layout and operation, and safety assessment are discussed. It is expected to provide reference for disposal of low and intermediate level waste that contain the higher concentration of long-lived radionuclides in China. (authors)

  7. Deep geologic storage of high level radioactive wastes: conceptual generic designs

    International Nuclear Information System (INIS)

    1995-01-01

    This report summarizes the studies on deep geologic storage of radioactive wastes and specially for the high-level radioactive wastes. The study is focussed to the geotechnical assessment and generic-conceptual designs. Methodology analysis, geotechnical feasibility, costs and operation are studied

  8. A Closer Look at Deep Learning Neural Networks with Low-level Spectral Periodicity Features

    DEFF Research Database (Denmark)

    Sturm, Bob L.; Kereliuk, Corey; Pikrakis, Aggelos

    2014-01-01

    Systems built using deep learning neural networks trained on low-level spectral periodicity features (DeSPerF) reproduced the most “ground truth” of the systems submitted to the MIREX 2013 task, “Audio Latin Genre Classification.” To answer why this was the case, we take a closer look...

  9. Numerical investigation of high level nuclear waste disposal in deep anisotropic geologic repositories

    KAUST Repository

    Salama, Amgad; El Amin, Mohamed F.; Sun, Shuyu

    2015-01-01

    One of the techniques that have been proposed to dispose high level nuclear waste (HLW) has been to bury them in deep geologic formations, which offer relatively enough space to accommodate the large volume of HLW accumulated over the years since

  10. Plan of deep underground construction for investigations on high-level radioactive waste storage

    International Nuclear Information System (INIS)

    Mayanovskij, M.S.

    1996-01-01

    The program of studies of the Japanese PNC corporation on construction of deep underground storage for high-level radioactive wastes is presented. The program is intended for 20 years. The total construction costs equal about 20 billion yen. The total cost of the project is equal to 60 billion yen. The underground part is planned to reach 1000 m depth

  11. Analysis of resonant fast ion distributions during combined ICRF and NBI heating with transients using neutron emission spectroscopy

    Science.gov (United States)

    Hellesen, C.; Mantsinen, M.; Conroy, S.; Ericsson, G.; Eriksson, J.; Kiptily, V. G.; Nabais, F.; Contributors, JET

    2018-05-01

    ICRF heating at the fundamental cyclotron frequency of a hydrogen minority ion species also gives rise to a partial power absorption by deuterium ions at their second harmonic resonance. This paper studies the deuterium distributions resulting from such 2nd harmonic heating at JET using neutron emission spectroscopy data from the time of flight spectrometer TOFOR. The fast deuterium distributions are obtained over the energy range 100 keV to 2 MeV. Specifically, we study how the fast deuterium distributions vary as ICRF heating is used alone as well as in combination with NBI heating. When comparing the different heating scenarios, we observed both a difference in the shapes of the distributions as well as in their absolute level. The differences are most pronounced below 0.5 MeV. Comparisons are made with corresponding distributions calculated with the code PION. We find a good agreement between the measured distributions and those calculated with PION, both in terms of their shapes as well as their amplitudes. However, we also identified a period with signs of an inverted fast ion distribution, which showed large disagreements between the modeled and measured results. Resonant interactions with tornado modes, i.e. core localized toroidal alfven eigenmodes (TAEs), are put forward as a possible explanation for the inverted distribution.

  12. A Polarization-Adjustable Picosecond Deep-Ultraviolet Laser for Spin- and Angle-Resolved Photoemission Spectroscopy

    International Nuclear Information System (INIS)

    Zhang Feng-Feng; Yang Feng; Zhang Shen-Jin; Wang Zhi-Min; Xu Feng-Liang; Peng Qin-Jun; Zhang Jing-Yuan; Xu Zu-Yan; Wang Xiao-Yang; Chen Chuang-Tian

    2012-01-01

    We report on a polarization-adjustable picosecond deep-ultraviolet (DUV) laser at 177.3 nm. The DUV laser was produced by second harmonic generation from a mode-locked laser at 355 nm in nonlinear optical crystal KBBF. The laser delivered a maximum average output power of 1.1 mW at 177.3 nm. The polarization of the 177.3 nm beam was adjusted with linear and circular polarization by means of λ/4 and λ/2 wave plates. To the best of our knowledge, the laser has been employed as the circularly polarized and linearly polarized DUV light source for a spin- and angle-resolved photoemission spectroscopy with high resolution for the first time. (fundamental areas of phenomenology(including applications))

  13. Deep donor-acceptor pair recombination in bulk GaP studied by ODMR and DLTS techniques

    International Nuclear Information System (INIS)

    Awadelkarim, O.O.; Godlewski, M.; Monemar, B.

    1989-01-01

    Deep level transient spectroscopy (DLTS) and optically detected magnetic resonance (ODMR) are applied to study deep defect levels with photoluminescence bands observed in the near infrared region in S- and Te-doped bulk GaP crystals grown by the liquid encapsulated Czochralski method. The ODMR data suggest that the emission bands with maxima observed at 8000-8200 A (∼ 1.5 eV), common to both materials, and at 7750 A (1.6 eV), present only in GaP:Te, are due to donor-acceptor pair recombinations. The latter band, reported here for the first time, is tentatively associated with deep states observed by DLTS. (author) 19 refs., 5 figs

  14. A Q-switched Ho:YAG laser assisted nanosecond time-resolved T-jump transient mid-IR absorbance spectroscopy with high sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Li, Deyong; Li, Yunliang; Li, Hao; Weng, Yuxiang, E-mail: yxweng@iphy.ac.cn [Key Laboratory of Soft Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wu, Xianyou [Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031 (China); Yu, Qingxu [School of Physics and Optoelectronic Technology, Dalian University of Technology, No. 2, Linggong Road, Dalian 116023 (China)

    2015-05-15

    Knowledge of dynamical structure of protein is an important clue to understand its biological function in vivo. Temperature-jump (T-jump) time-resolved transient mid-IR absorbance spectroscopy is a powerful tool in elucidating the protein dynamical structures and the folding/unfolding kinetics of proteins in solution. A home-built setup of T-jump time-resolved transient mid-IR absorbance spectroscopy with high sensitivity is developed, which is composed of a Q-switched Cr, Tm, Ho:YAG laser with an output wavelength at 2.09 μm as the T-jump heating source, and a continuous working CO laser tunable from 1580 to 1980 cm{sup −1} as the IR probe. The results demonstrate that this system has a sensitivity of 1 × 10{sup −4} ΔOD for a single wavelength detection, and 2 × 10{sup −4} ΔOD for spectral detection in amide I′ region, as well as a temporal resolution of 20 ns. Moreover, the data quality coming from the CO laser is comparable to the one using the commercial quantum cascade laser.

  15. A picosecond widely tunable deep-ultraviolet laser for angle-resolved photoemission spectroscopy

    International Nuclear Information System (INIS)

    Zhang Feng-Feng; Yang Feng; Zhang Shen-Jin; Xu Zhi; Wang Zhi-Min; Xu Feng-Liang; Peng Qin-Jun; Zhang Jing-Yuan; Xu Zu-Yan; Wang Xiao-Yang; Chen Chuang-Tian

    2013-01-01

    We develop a picosecond widely tunable laser in a deep-ultraviolet region from 175 nm to 210 nm, generated by two stages of frequency doubling of a 80-MHz mode-locked picosecond Ti:sapphire laser. A β-BaB 2 O 4 walk-off compensation configuration and a KBe 2 BO 3 F 2 prism-coupled device are adopted for the generation of second harmonic and fourth harmonics, respectively. The highest power is 3.72 mW at 193 nm, and the fluctuation at 2.85 mW in 130 min is less than ±2%

  16. Intermolecular interaction of photoexcited Cu(/TMpy-P4) with water studied by transient resonance Raman and picosecond absorption spectroscopies

    NARCIS (Netherlands)

    Kruglik, S.; Kruglik, Sergei G.; Ermolenkov, Vladimir V.; Shvedko, Alexander G.; Orlovich, Valentine A.; Galievsky, Victor A.; Chirvony, Vladimir S.; Otto, Cornelis; Turpin, Pierre-Yves

    1997-01-01

    photoinduced complex between Cu(TMpy-P4) and water molecules, reversibly axially coordinated to the central metal, was observed in picosecond transient absorption and nanosecond resonance Raman experiments. This complex is rapidly created (τ1 = 15 ± 5 ps) in the excited triplet (π, π*) state of

  17. Photoinduced electron-transfer in perylenediimide triphenylamine-based dendrimers : single photon timing and femtosecond transient absorption spectroscopy

    NARCIS (Netherlands)

    Fron, Eduard; Pilot, Roberto; Schweitzer, Gerd; Qu, Jianqiang; Herrmann, Andreas; Müllen, Klaus; Hofkens, Johan; Auweraer, Mark Van der; Schryver, Frans C. De

    2008-01-01

    The excited state dynamics of two generations perylenediimide chromophores substituted in the bay area with dendritic branches bearing triphenylamine units as well as those of the respective reference compounds are investigated. Using single photon timing and multi-pulse femtosecond transient

  18. Study of early laser-induced plasma dynamics: Transient electron density gradients via Thomson scattering and Stark Broadening, and the implications on laser-induced breakdown spectroscopy measurements

    International Nuclear Information System (INIS)

    Diwakar, P.K.; Hahn, D.W.

    2008-01-01

    To further develop laser-induced breakdown spectroscopy (LIBS) as an analytical technique, it is necessary to better understand the fundamental processes and mechanisms taking place during the plasma evolution. This paper addresses the very early plasma dynamics (first 100 ns) using direct plasma imaging, light scattering, and transmission measurements from a synchronized 532-nm probe laser pulse. During the first 50 ns following breakdown, significant Thomson scattering was observed while the probe laser interacted with the laser-induced plasma. The Thomson scattering was observed to peak 15-25 ns following plasma initiation and then decay rapidly, thereby revealing the highly transient nature of the free electron density and plasma equilibrium immediately following breakdown. Such an intense free electron density gradient is suggestive of a non-equilibrium, free electron wave generated by the initial breakdown and growth processes. Additional probe beam transmission measurements and electron density measurements via Stark broadening of the 500.1-nm nitrogen ion line corroborate the Thomson scattering observations. In concert, the data support the finding of a highly transient plasma that deviates from local thermodynamic equilibrium (LTE) conditions during the first tens of nanoseconds of plasma lifetime. The implications of this early plasma transient behavior are discussed in the context of plasma-analyte interactions and the role on LIBS measurements

  19. Damage related deep electron levels in ion implanted GaAs

    International Nuclear Information System (INIS)

    Allsopp, D.W.E.; Peaker, A.R.

    1986-01-01

    A study has been made of the deep electron levels in semi-insulating GaAs implanted with either 78 Se + or 29 Si + ions and rendered n-type by subsequent annealing without encapsulation in partial pressures of arsenic or arsine. Three implantation related deep states were detected with concentration profiles approximating to the type of Gaussian distributions expected for point defects related to ion implantation damage. Further heat treatment of the samples at 500 0 C in a gas ambient of U 2 /H 2 substantially reduced concentration of these deep levels. Two of these states were thought to be related to displacements of the substrate atoms. The third, at Esubc -0.67 eV, was found in only 78 Se + ion implanted GaAs substrates and was thought to be a defect involving both Se and As atoms, rather than intrinsic lattice disorder. It is proposed that the annealing rate of these implantation related deep levels depends crucially on the in-diffusion of arsenic vacancies during heat treatments. (author)

  20. High levels of natural radionuclides in a deep-sea infaunal xenophyophore

    Energy Technology Data Exchange (ETDEWEB)

    Swinbanks, D D; Shirayama, Y

    1986-03-27

    The paper concerns the high levels of natural radionuclides in a deep-sea infaunal xenophyophore from the Izu-Ogasawara Trench. Measured /sup 210/Po activities and barium contents of various parts of Occultammina profunda and the surrounding sediment are given, together with their estimated /sup 210/Pb and /sup 226/Ra activities. The data suggest that xenophyphores are probably subject to unusually high levels of natural radiation.

  1. Heavy ion deep inelastic collisions studied by discrete gamma ray spectroscopy

    International Nuclear Information System (INIS)

    Krolas, W.

    1996-05-01

    The discrete gamma ray spectroscopy has been used as a tool to investigate the heavy ion collision. It has been shown that such experimental information supplemented by results of additional of-line radioactivity measurements is complete enough to reconstruct distributions of products of very complex nuclear reactions. Three experiments have been performed in which the 208 Pb + 64 Ni, 130 Te + 64 Ni and 208 Pb + 58 Ni systems have been created. The production cross sections of fragment isotopes have been determined and compared with existing model predictions

  2. Heavy ion deep inelastic collisions studied by discrete gamma ray spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Krolas, W. [The H. Niewodniczanski Inst. of Nuclear Physics, Cracow (Poland)

    1996-05-01

    The discrete gamma ray spectroscopy has been used as a tool to investigate the heavy ion collision. It has been shown that such experimental information supplemented by results of additional of-line radioactivity measurements is complete enough to reconstruct distributions of products of very complex nuclear reactions. Three experiments have been performed in which the {sup 208}Pb + {sup 64}Ni, {sup 130}Te + {sup 64}Ni and {sup 208}Pb + {sup 58}Ni systems have been created. The production cross sections of fragment isotopes have been determined and compared with existing model predictions 64 refs, 59 figs, 19 tabs

  3. Lack of mutagens in deep-fat-fried foods obtained at the retail level.

    Science.gov (United States)

    Taylor, S L; Berg, C M; Shoptaugh, N H; Scott, V N

    1982-04-01

    The basic methylene chloride extract from 20 of 30 samples of foods fried in deep fat failed to elicit any mutagenic response that could be detected in the Salmonella typhimurium/mammalian microsome assay. The basic extracts of the remaining ten samples (all three chicken samples studied, two of the four potato-chip samples, one of four corn-chip samples, the sample of onion rings, two of six doughnuts, and one of three samples of french-fried potato) showed evidence of weak mutagenic activity. In these samples, amounts of the basic extract equivalent to 28.5-57 g of the original food sample were required to produce revertants at levels of 2.6-4.8 times the background level. Only two of the acidic methylene chloride extracts from the 30 samples exhibited mutagenic activity greater than 2.5 times the background reversion level, and in both cases (one corn-chip and one shrimp sample) the mutagenic response was quite weak. The basic extract of hamburgers fried in deep fat in a home-style fryer possessed higher levels of mutagenic activity (13 times the background reversion level). However, the mutagenic activity of deep-fried hamburgers is some four times lower than that of pan-fried hamburgers.

  4. S2p core level spectroscopy of short chain oligothiophenes

    Science.gov (United States)

    Baseggio, O.; Toffoli, D.; Stener, M.; Fronzoni, G.; de Simone, M.; Grazioli, C.; Coreno, M.; Guarnaccio, A.; Santagata, A.; D'Auria, M.

    2017-12-01

    The Near-Edge X-ray-Absorption Fine-Structure (NEXAFS) and X-ray Photoemission Spectroscopy (XPS) of short-chain oligothiophenes (thiophene, 2,2'-bithiophene, and 2,2':5',2″-terthiophene) in the gas phase have been measured in the sulfur L2,3-edge region. The assignment of the spectral features is based on the relativistic two-component zeroth-order regular approximation time dependent density functional theory approach. The calculations allow us to estimate both the contribution of the spin-orbit splitting and of the molecular-field splitting to the sulfur binding energies and give results in good agreement with the experimental measurements. The deconvolution of the calculated S2p NEXAFS spectra into the two manifolds of excited states converging to the LIII and LII edges facilitates the attribution of the spectral structures. The main S2p NEXAFS features are preserved along the series both as concerns the energy positions and the nature of the transitions. This behaviour suggests that the electronic and geometrical environment of the sulfur atom in the three oligomers is relatively unaffected by the increasing chain length. This trend is also observed in the XPS spectra. The relatively simple structure of S2p NEXAFS spectra along the series reflects the localized nature of the virtual states involved in the core excitation process.

  5. Reference design and operations for deep borehole disposal of high-level radioactive waste

    International Nuclear Information System (INIS)

    Herrick, Courtney Grant; Brady, Patrick Vane; Pye, Steven; Arnold, Bill Walter; Finger, John Travis; Bauer, Stephen J.

    2011-01-01

    A reference design and operational procedures for the disposal of high-level radioactive waste in deep boreholes have been developed and documented. The design and operations are feasible with currently available technology and meet existing safety and anticipated regulatory requirements. Objectives of the reference design include providing a baseline for more detailed technical analyses of system performance and serving as a basis for comparing design alternatives. Numerous factors suggest that deep borehole disposal of high-level radioactive waste is inherently safe. Several lines of evidence indicate that groundwater at depths of several kilometers in continental crystalline basement rocks has long residence times and low velocity. High salinity fluids have limited potential for vertical flow because of density stratification and prevent colloidal transport of radionuclides. Geochemically reducing conditions in the deep subsurface limit the solubility and enhance the retardation of key radionuclides. A non-technical advantage that the deep borehole concept may offer over a repository concept is that of facilitating incremental construction and loading at multiple perhaps regional locations. The disposal borehole would be drilled to a depth of 5,000 m using a telescoping design and would be logged and tested prior to waste emplacement. Waste canisters would be constructed of carbon steel, sealed by welds, and connected into canister strings with high-strength connections. Waste canister strings of about 200 m length would be emplaced in the lower 2,000 m of the fully cased borehole and be separated by bridge and cement plugs. Sealing of the upper part of the borehole would be done with a series of compacted bentonite seals, cement plugs, cement seals, cement plus crushed rock backfill, and bridge plugs. Elements of the reference design meet technical requirements defined in the study. Testing and operational safety assurance requirements are also defined. Overall

  6. Reference design and operations for deep borehole disposal of high-level radioactive waste.

    Energy Technology Data Exchange (ETDEWEB)

    Herrick, Courtney Grant; Brady, Patrick Vane; Pye, Steven; Arnold, Bill Walter; Finger, John Travis; Bauer, Stephen J.

    2011-10-01

    A reference design and operational procedures for the disposal of high-level radioactive waste in deep boreholes have been developed and documented. The design and operations are feasible with currently available technology and meet existing safety and anticipated regulatory requirements. Objectives of the reference design include providing a baseline for more detailed technical analyses of system performance and serving as a basis for comparing design alternatives. Numerous factors suggest that deep borehole disposal of high-level radioactive waste is inherently safe. Several lines of evidence indicate that groundwater at depths of several kilometers in continental crystalline basement rocks has long residence times and low velocity. High salinity fluids have limited potential for vertical flow because of density stratification and prevent colloidal transport of radionuclides. Geochemically reducing conditions in the deep subsurface limit the solubility and enhance the retardation of key radionuclides. A non-technical advantage that the deep borehole concept may offer over a repository concept is that of facilitating incremental construction and loading at multiple perhaps regional locations. The disposal borehole would be drilled to a depth of 5,000 m using a telescoping design and would be logged and tested prior to waste emplacement. Waste canisters would be constructed of carbon steel, sealed by welds, and connected into canister strings with high-strength connections. Waste canister strings of about 200 m length would be emplaced in the lower 2,000 m of the fully cased borehole and be separated by bridge and cement plugs. Sealing of the upper part of the borehole would be done with a series of compacted bentonite seals, cement plugs, cement seals, cement plus crushed rock backfill, and bridge plugs. Elements of the reference design meet technical requirements defined in the study. Testing and operational safety assurance requirements are also defined. Overall

  7. 9969 Braille: Deep Space 1 infrared spectroscopy, geometric albedo, and classification

    Science.gov (United States)

    Buratti, B.J.; Britt, D.T.; Soderblom, L.A.; Hicks, M.D.; Boice, D.C.; Brown, R.H.; Meier, R.; Nelson, R.M.; Oberst, J.; Owen, T.C.; Rivkin, A.S.; Sandel, B.R.; Stern, S.A.; Thomas, N.; Yelle, R.V.

    2004-01-01

    Spectra of Asteroid 9969 Braille in the 1.25-2.6 ??m region returned by the Deep Space 1 (DS1) Mission show a ???10% absorption band centered at 2 ??m, and a reflectance peak at 1.6 ??m. Analysis of these features suggest that the composition of Braille is roughly equal parts pyroxene and olivine. Its spectrum between 0.4 and 2.5 ??m suggests that it is most closely related to the Q taxonomic type of asteroid. The spectrum also closely matches that of the ordinary chondrites, the most common type of terrestrial meteorite. The geometric albedo of Braille is unusually high (pv = 0.34), which is also consistent with its placement within the rarer classes of stony asteroids, and which suggests it has a relatively fresh, unweathered surface, perhaps due to a recent collision. ?? 2003 Elsevier Inc. All rights reserved.

  8. Studying the distribution of deep Raman spectroscopy signals using liquid tissue phantoms with varying optical properties.

    Science.gov (United States)

    Vardaki, Martha Z; Gardner, Benjamin; Stone, Nicholas; Matousek, Pavel

    2015-08-07

    In this study we employed large volume liquid tissue phantoms, consisting of a scattering agent (Intralipid), an absorption agent (Indian ink) and a synthesized calcification powder (calcium hydroxyapatite (HAP)) similar to that found in cancerous tissues (e.g. breast and prostate), to simulate human tissues. We studied experimentally the magnitude and origin of Raman signals in a transmission Raman geometry as a function of optical properties of the medium and the location of calcifications within the phantom. The goal was to inform the development of future noninvasive cancer screening applications in vivo. The results provide insight into light propagation and Raman scattering distribution in deep Raman measurements, exploring also the effect of the variation of relative absorbance of laser and Raman photons within the phantoms. Most notably when modeling breast and prostate tissues it follows that maximum signals is obtained from the front and back faces of the tissue with the central region contributing less to the measured spectrum.

  9. Direct observation and measurements of neutron induced deep levels responsible for N{sub eff} changes in high resistivity silicon detectors using TCT

    Energy Technology Data Exchange (ETDEWEB)

    Li, Z.; Li, C.J. [Brookhaven National Lab., Upton, NY (United States); Eremin, V.; Verbitskaya, E. [AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.

    1996-03-01

    Neutron induced deep levels responsible for changes of space charge concentration {ital N{sub eff}} in high resistivity silicon detectors have been observed directly using the transient current technique (TCT). It has been observed by TCT that the absolute value and sign of {ital N{sub eff}} experience changes due to the trapping of non- equilibrium free carriers generated near the surface (about 5 micrometers depth into the silicon) by short wavelength laser pulses in fully depleted detectors. Electron trapping causes {ital N{sub eff}} to change toward negative direction (or more acceptor-like space charges) and hole trapping causes {ital N{sub eff}} to change toward positive direction (or more donor-like space charges). The specific temperature associated with these {ital N{sub eff}} changes are those of the frozen-up temperatures for carrier emission of the corresponding deep levels. The carrier capture cross sections of various deep levels have been measured directly using different free carrier injection schemes. 10 refs., 12 figs., 3 tabs.

  10. SELECTION OF BURST-LIKE TRANSIENTS AND STOCHASTIC VARIABLES USING MULTI-BAND IMAGE DIFFERENCING IN THE PAN-STARRS1 MEDIUM-DEEP SURVEY

    International Nuclear Information System (INIS)

    Kumar, S.; Gezari, S.; Heinis, S.; Chornock, R.; Berger, E.; Soderberg, A.; Stubbs, C. W.; Kirshner, R. P.; Rest, A.; Huber, M. E.; Narayan, G.; Marion, G. H.; Burgett, W. S.; Foley, R. J.; Scolnic, D.; Riess, A. G.; Lawrence, A.; Smartt, S. J.; Smith, K.; Wood-Vasey, W. M.

    2015-01-01

    We present a novel method for the light-curve characterization of Pan-STARRS1 Medium Deep Survey (PS1 MDS) extragalactic sources into stochastic variables (SVs) and burst-like (BL) transients, using multi-band image-differencing time-series data. We select detections in difference images associated with galaxy hosts using a star/galaxy catalog extracted from the deep PS1 MDS stacked images, and adopt a maximum a posteriori formulation to model their difference-flux time-series in four Pan-STARRS1 photometric bands g P1 , r P1 , i P1 , and z P1 . We use three deterministic light-curve models to fit BL transients; a Gaussian, a Gamma distribution, and an analytic supernova (SN) model, and one stochastic light-curve model, the Ornstein-Uhlenbeck process, in order to fit variability that is characteristic of active galactic nuclei (AGNs). We assess the quality of fit of the models band-wise and source-wise, using their estimated leave-out-one cross-validation likelihoods and corrected Akaike information criteria. We then apply a K-means clustering algorithm on these statistics, to determine the source classification in each band. The final source classification is derived as a combination of the individual filter classifications, resulting in two measures of classification quality, from the averages across the photometric filters of (1) the classifications determined from the closest K-means cluster centers, and (2) the square distances from the clustering centers in the K-means clustering spaces. For a verification set of AGNs and SNe, we show that SV and BL occupy distinct regions in the plane constituted by these measures. We use our clustering method to characterize 4361 extragalactic image difference detected sources, in the first 2.5 yr of the PS1 MDS, into 1529 BL, and 2262 SV, with a purity of 95.00% for AGNs, and 90.97% for SN based on our verification sets. We combine our light-curve classifications with their nuclear or off-nuclear host galaxy offsets, to

  11. SELECTION OF BURST-LIKE TRANSIENTS AND STOCHASTIC VARIABLES USING MULTI-BAND IMAGE DIFFERENCING IN THE PAN-STARRS1 MEDIUM-DEEP SURVEY

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, S.; Gezari, S.; Heinis, S. [Department of Astronomy, University of Maryland, Stadium Drive, College Park, MD 21224 (United States); Chornock, R.; Berger, E.; Soderberg, A.; Stubbs, C. W.; Kirshner, R. P. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Rest, A. [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Huber, M. E.; Narayan, G.; Marion, G. H.; Burgett, W. S. [Institute for Astronomy, University of Hawaii, 2680 Woodlawn Drive, Honolulu, HI 96822 (United States); Foley, R. J. [Astronomy Department, University of Illinois at Urbana-Champaign, 1002 West Green Street, Urbana, IL 61801 (United States); Scolnic, D.; Riess, A. G. [Department of Physics and Astronomy, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218 (United States); Lawrence, A. [Institute for Astronomy, University of Edinburgh Scottish Universities Physics Alliance, Royal Observatory, Blackford Hill, Edinburgh EH9 3HJ (United Kingdom); Smartt, S. J.; Smith, K. [Astrophysics Research Centre, School of Mathematics and Physics, Queen' s University Belfast, Belfast BT7 1NN (United Kingdom); Wood-Vasey, W. M. [Pittsburgh Particle Physics, Astrophysics, and Cosmology Center, Department of Physics and Astronomy, University of Pittsburgh, 3941 O' Hara Street, Pittsburgh, PA 15260 (United States); and others

    2015-03-20

    We present a novel method for the light-curve characterization of Pan-STARRS1 Medium Deep Survey (PS1 MDS) extragalactic sources into stochastic variables (SVs) and burst-like (BL) transients, using multi-band image-differencing time-series data. We select detections in difference images associated with galaxy hosts using a star/galaxy catalog extracted from the deep PS1 MDS stacked images, and adopt a maximum a posteriori formulation to model their difference-flux time-series in four Pan-STARRS1 photometric bands g {sub P1}, r {sub P1}, i {sub P1}, and z {sub P1}. We use three deterministic light-curve models to fit BL transients; a Gaussian, a Gamma distribution, and an analytic supernova (SN) model, and one stochastic light-curve model, the Ornstein-Uhlenbeck process, in order to fit variability that is characteristic of active galactic nuclei (AGNs). We assess the quality of fit of the models band-wise and source-wise, using their estimated leave-out-one cross-validation likelihoods and corrected Akaike information criteria. We then apply a K-means clustering algorithm on these statistics, to determine the source classification in each band. The final source classification is derived as a combination of the individual filter classifications, resulting in two measures of classification quality, from the averages across the photometric filters of (1) the classifications determined from the closest K-means cluster centers, and (2) the square distances from the clustering centers in the K-means clustering spaces. For a verification set of AGNs and SNe, we show that SV and BL occupy distinct regions in the plane constituted by these measures. We use our clustering method to characterize 4361 extragalactic image difference detected sources, in the first 2.5 yr of the PS1 MDS, into 1529 BL, and 2262 SV, with a purity of 95.00% for AGNs, and 90.97% for SN based on our verification sets. We combine our light-curve classifications with their nuclear or off-nuclear host

  12. Transient photoconductivity in InGaN/GaN multiple quantum wells, measured by time-resolved terahertz spectroscopy

    DEFF Research Database (Denmark)

    Porte, Henrik; Turchinovich, Dmitry; Cooke, David

    2009-01-01

    Terahertz conductivity of InGaN/GaN MQWs was studied by time-resolved terahertz spectroscopy. Restoration of the built-in piezoelectric field leads to a nonexponential carrier density decay. Terahertz conductivity spectrum is described by the Drude-Smith......Terahertz conductivity of InGaN/GaN MQWs was studied by time-resolved terahertz spectroscopy. Restoration of the built-in piezoelectric field leads to a nonexponential carrier density decay. Terahertz conductivity spectrum is described by the Drude-Smith...

  13. WATSON: Detecting organic material in subsurface ice using deep-UV fluorescence and Raman spectroscopy

    Science.gov (United States)

    Eshelman, E.; Wanger, G.; Manatt, K.; Malaska, M.; Willis, M.; Abbey, W.; Doloboff, I.; Beegle, L. W.; DeFlores, L. P.; Priscu, J. C.; Lane, A. L.; Carrier, B. L.; Mellerowicz, B.; Kim, D.; Paulsen, G.; Zacny, K.; Bhartia, R.

    2017-12-01

    Future astrobiological missions to Europa and other ocean worlds may benefit from next-generation instrumentation capable of in situ organic and life detection in subsurface ice environments. WATSON (Wireline Analysis Tool for in Situ Observation of Northern ice sheets) is an instrument under development at NASA's Jet Propulsion Laboratory. WATSON contains high-TRL instrumentation developed for SHERLOC, the Mars 2020 deep-UV fluorescence and Raman spectrometer, including a 248.6 nm NeCu hollow cathode laser as an excitation source. In WATSON, these technologies provide spectroscopic capabilities highly sensitive to many organic compounds, including microbes, in an instrument package approximately 1.2 m long with a 101.6 mm diameter, designed to accommodate a 108 mm ice borehole. Interrogation into the ice wall with a laser allows for a non-destructive in situ measurement that preserves the spatial distribution of material within the ice. We report on a successful deployment of WATSON to Kangerlussuaq, Greenland, where the instrument was lowered to a 4.5 m depth in a hand-cored hole on the Kangerlussuaq sector of the Greenland ice sheet. Motorized stages within the instrument were used to raster a laser across cm-scale regions of the interior surface of the borehole, obtaining fluorescence spectral maps with a 200 µm spatial resolution and a spectral range from 265 nm to 440 nm. This region includes the UV emission bands of many aromatic compounds and microbes, and includes the water and ice Raman O-H stretching modes. We additionally report on experiments designed to inform an early-2018 deployment to Kangerlussuaq where WATSON will be incorporated into a Honeybee Robotics planetary deep drill, with a goal of drilling to a depth of 100 m and investigating the distribution of organic material within the ice sheet. These experiments include laboratory calibrations to determine the sensitivity to organic compounds embedded in ice at various depths, as well as

  14. Spectroscopy

    DEFF Research Database (Denmark)

    Berg, Rolf W.

    This introductory booklet covers the basics of molecular spectroscopy, infrared and Raman methods, instrumental considerations, symmetry analysis of molecules, group theory and selection rules, as well as assignments of fundamental vibrational modes in molecules.......This introductory booklet covers the basics of molecular spectroscopy, infrared and Raman methods, instrumental considerations, symmetry analysis of molecules, group theory and selection rules, as well as assignments of fundamental vibrational modes in molecules....

  15. BWR [boiling water reactor] core criticality versus water level during an ATWS [anticipated transient without scram] event

    International Nuclear Information System (INIS)

    Sehgal, B.R.; Peng, C.M.; Maly, J.

    1988-01-01

    The BWR [boiling water reactor] emergency procedures guidelines recommend management of core water level to reduce the power generated during an anticipated transient without scram (ATWS) event. BWR power level variation has traditionally been calculated in the system codes using a 1-D [one-dimensional] 2-group neutron kinetics model to determine criticality. This methodology used also for calculating criticality of the partially covered BWR cores has, however, never been validated against data. In this paper, the power level versus water level issues in an ATWS severe accident are introduced and the accuracy of the traditional methodology is investigated by comparing with measured data. It is found that the 1-D 2-group treatment is not adequate for accurate predictions of criticality and therefore the system power level for the water level variations that may be encountered in a prototypical ATWS severe accident. It is believed that the current predictions for power level may be too high

  16. Albedo Neutron Dosimetry in a Deep Geological Disposal Repository for High-Level Nuclear Waste.

    Science.gov (United States)

    Pang, Bo; Becker, Frank

    2017-04-28

    Albedo neutron dosemeter is the German official personal neutron dosemeter in mixed radiation fields where neutrons contribute to personal dose. In deep geological repositories for high-level nuclear waste, where neutrons can dominate the radiation field, it is of interest to investigate the performance of albedo neutron dosemeter in such facilities. In this study, the deep geological repository is represented by a shielding cask loaded with spent nuclear fuel placed inside a rock salt emplacement drift. Due to the backscattering of neutrons in the drift, issues concerning calibration of the dosemeter arise. Field-specific calibration of the albedo neutron dosemeter was hence performed with Monte Carlo simulations. In order to assess the applicability of the albedo neutron dosemeter in a deep geological repository over a long time scale, spent nuclear fuel with different ages of 50, 100 and 500 years were investigated. It was found out, that the neutron radiation field in a deep geological repository can be assigned to the application area 'N1' of the albedo neutron dosemeter, which is typical in reactors and accelerators with heavy shielding. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  17. Ultrafast conductivity dynamics in optically excited InGaN/GaN multiple quantum wells, observed by transient THz spectroscopy

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Porte, Henrik; Cooke, David

    2010-01-01

    We investigate ultrafast carrier dynamics in photoexcited InGaN/GaN multiple quantum wells by time-resolved terahertz spectroscopy. The initially very strong built-in piezoelectric field is screened upon photoexcitation by the polarized carriers, and is gradually restored as the carriers recombine...

  18. Introduction to Time-Resolved Spectroscopy: Nanosecond Transient Absorption and Time-Resolved Fluorescence of Eosin B

    Science.gov (United States)

    Farr, Erik P.; Quintana, Jason C.; Reynoso, Vanessa; Ruberry, Josiah D.; Shin, Wook R.; Swartz, Kevin R.

    2018-01-01

    Here we present a new undergraduate laboratory that will introduce the concepts of time-resolved spectroscopy and provide insight into the natural time scales on which chemical dynamics occur through direct measurement. A quantitative treatment of the acquired data will provide a deeper understanding of the role of quantum mechanics and various…

  19. Effects of heat from high-level waste on performance of deep geological repository components

    International Nuclear Information System (INIS)

    1984-11-01

    This report discusses the effects of heat on the deep geological repository systems and its different components. The report is focussed specifically on effects due to thermal energy release solely from high-level waste or spent fuel. It reviews the experimental data and theoretical models of the effects of heat both on the behaviour of engineered and natural barriers. A summary of the current status of research and repository development including underground test facilities is presented

  20. Ultrafast dynamics of two copper bis-phenanthroline complexes measured by x-ray transient absorption spectroscopy

    DEFF Research Database (Denmark)

    Kelley, Matthew S.; Shelby, Megan L.; Mara, Michael W.

    2017-01-01

    have the general formula [Cu(I)(R)2]+, where R = 2,9-dimethyl-1,10-phenanthroline (dmp) and 2,9-diphenyl-1,10-phenanthroline disulfonic acid disodium salt (dpps). [Cu(I)(dmp)2]+ has methyl groups at the 2,9 positions of phenanthroline (phen) and adopts a pseudo-tetrahedral geometry. In contrast, [Cu......(I)(dpps)2]+ possesses two bulky phenyl-sulfonate groups attached to each phen ligand that force the molecule to adopt a flattened tetrahedral geometry in the ground state. Previously, optical transient absorption (OTA) and synchrotron based XTA experiments with 100 ps time resolution have been employed...

  1. Studies of iron in deep-sea sediments by Moessbauer spectroscopy

    International Nuclear Information System (INIS)

    Drodt, M.; Lougear, A.; Trautwein, A.X.; Koenig, I.; Suess, E.; Koch, C. Bender

    1998-01-01

    The distribution of the forms of Fe in the solid phases in core samples of sediments from the Peru Basin has been investigated by Moessbauer spectroscopy with special attention to the cause of the sharp color transition between an upper green colored and a lower tan colored part. An important part of sample handling includes strict exclusion of oxygen during preparation of absorbers and measurements at cryogenic temperatures. The measurement strategy includes measurements between 77 K and 300 mK in zero external magnetic field, supplemented by measurements in external magnetic fields at 4.2 and 300 mK (up to 6.2 and 1 T, respectively). The temperature scans allow detection, identification and quantification of superparamagnetic iron oxides (goethite and hematite). The oxides are only present in samples from the upper tan-colored part of the core. The major part of the Fe(II) and Fe(III) (>80%) is present in a magnetic structure similar to that of layer silicates. The relative Fe(II) content of the layer silicates is practically identical to that determined from the paramagnetic components measured at liquid nitrogen temperature. This shows that the color transition in the sediment coincides with a change in the relative Fe(II) content in layer silicates from 11 to 37%. The color change can thus be explained by an increase in occurrence of Fe(II)-Fe(III) pairs exhibiting absorption bands due to intervalence electron transfer

  2. Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Gür, Emre; Tabares, G.; Hierro, A.; Arehart, A.; Ringel, S. A.; Chauveau, J. M.

    2012-01-01

    Deep level defects in n-type unintentionally doped a-plane Mg x Zn 1−x O, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of Mg x Zn 1−x O were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of E c − 1.4 eV, 2.1 eV, 2.6 V, and E v + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at E c − 2.1 eV, E v + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at E v + 0.3 eV and E c − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the E v + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the E c − 1.4 eV and E c − 2.6 eV levels in Mg alloyed samples.

  3. Distinguishing between deep trapping transients of electrons and holes in TiO2 nanotube arrays using planar microwave resonator sensor.

    Science.gov (United States)

    Zarifi, Mohammad H; Wiltshire, Benjamin Daniel; Mahdi, Najia; Shankar, Karthik; Daneshmand, Mojgan

    2018-05-16

    A large signal DC bias and a small signal microwave bias were simultaneously applied to TiO2 nanotube membranes mounted on a planar microwave resonator. The DC bias modulated the electron concentration in the TiO2 nanotubes, and was varied between 0 and 120 V in this study. Transients immediately following the application and removal of DC bias were measured by monitoring the S-parameters of the resonator as a function of time. The DC bias stimulated Poole-Frenkel type trap-mediated electrical injection of excess carriers into TiO2 nanotubes which resulted in a near constant resonant frequency but a pronounced decrease in the microwave amplitude due to free electron absorption. When ultraviolet illumination and DC bias were both present and then step-wise removed, the resonant frequency shifted due to trapping -mediated change in the dielectric constant of the nanotube membranes. Characteristic lifetimes of 60-80 s, 300-800 s and ~3000 s were present regardless of whether light or bias was applied and are also observed in the presence of a hole scavenger, which we attribute to oxygen adsorption and deep electron traps while another characteristic lifetime > 9000 s was only present when illumination was applied, and is attributed to the presence of hole traps.

  4. Determination of the concentration of alum additive in deep-fried dough sticks using dielectric spectroscopy

    Directory of Open Access Journals (Sweden)

    Wenyu Kang

    2015-09-01

    Full Text Available The concentration of alum additive in deep-fried dough sticks (DFDSs was investigated using a coaxial probe method based on dielectric properties in the 0.3–10-GHz frequency range. The dielectric spectra of aqueous solutions with different concentrations of alum, sodium bicarbonate, and mixtures thereof were used. The correspondence between dielectric loss and alum concentration was thereby revealed. A steady, uniform correspondence was successfully established by introducing ω·ε″(ω, the sum of dielectric loss and conductor loss (i.e., total loss, according to the electrical conductivity of the alum-containing aqueous solutions. Specific, resonant-type dielectric dispersion arising from alum due to atomic polarization was identified around 1 GHz. This was used to discriminate the alum additive in the DFDS from other ingredients. A quantitative relationship between alum and sodium bicarbonate concentrations in the aqueous solutions and the differential dielectric loss Δε″(ω at 0.425 GHz was also established with a regression coefficient over 0.99. With the intention of eliminating the effects of the chemical reactions with sodium bicarbonate and the physical processes involved in leavening and frying during preparation, the developed technique was successfully applied to detect the alum dosage in a commercial DFDS (0.9942 g/L. The detected value agreed well with that determined using graphite furnace atomic absorption spectrometry (0.9722 g/L. The relative error was 2.2%. The results show that the proposed dielectric differential dispersion and loss technique is a suitable and effective method for determining the alum content in DFDSs.

  5. Transient Relative Age Effects across annual age groups in National level Australian Swimming.

    Science.gov (United States)

    Cobley, Stephen; Abbott, Shaun; Dogramaci, Sera; Kable, Adam; Salter, James; Hintermann, Mirjam; Romann, Michael

    2017-12-29

    To determine the prevalence, magnitude and transient patterning of Relative Age Effects (RAEs) according to sex and stroke event across all age-groups at the Australian National age swimming Championships. Repeated years of cross-sectional participation data were examined. Participants were 6014 unique male (3185) and female (2829) swimmers (aged 12-18 years) who participated in Freestyle (50, 400m) and/or Breaststroke (100, 200m) at the National age swimming Championships between 2000-2014 (inclusive). RAE prevalence, magnitude and transience were determined using Chi-square tests and Cramer's V estimates for effect size. Odds Ratios (OR) and 95% Confidence Intervals (CI) examined relative age quartile discrepancies. These steps were applied across age-groups and according to sex and each stroke event. Consistent RAEs with large-medium effect sizes were evident for males at 12-15 years of age respectively, and with large-medium effects for females at 12-14 respectively across all four swimming strokes. RAE magnitude then consistently reduced with age across strokes (e.g., Q1 vs. Q4 OR range 16year old males=0.94-1.20; females=0.68-1.41). With few exceptions, by 15-16 years RAEs had typically dissipated; and by 17-18 years, descriptive and significant inverse RAEs emerged, reflecting overrepresentation of relatively younger swimmers. Performance advantages associated with relative age (and thereby likely growth and maturation) are transient. Greater consideration of transient performance and participation in athlete development systems is necessary. This may include revising the emphasis of sport programmes according to developmental stages and delaying forms of athlete selection to improve validity. Copyright © 2018 Sports Medicine Australia. Published by Elsevier Ltd. All rights reserved.

  6. Thin film polycrystalline Si solar cells studied in transient regime by optical pump-terahertz probe spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Pikna, Peter; Skoromets, Volodymyr; Becker, C.; Fejfar, Antonín; Kužel, Petr

    2015-01-01

    Roč. 107, č. 23 (2015), "233901-1"-"233901-5" ISSN 0003-6951 R&D Projects: GA ČR GA13-12386S Grant - others:AVČR(CZ) M100101216 Institutional support: RVO:68378271 Keywords : thin film polycrystalline silicon * terahertz spectroscopy * passivation * Suns-Voc method * defects Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.142, year: 2015

  7. Multi-level gene/MiRNA feature selection using deep belief nets and active learning.

    Science.gov (United States)

    Ibrahim, Rania; Yousri, Noha A; Ismail, Mohamed A; El-Makky, Nagwa M

    2014-01-01

    Selecting the most discriminative genes/miRNAs has been raised as an important task in bioinformatics to enhance disease classifiers and to mitigate the dimensionality curse problem. Original feature selection methods choose genes/miRNAs based on their individual features regardless of how they perform together. Considering group features instead of individual ones provides a better view for selecting the most informative genes/miRNAs. Recently, deep learning has proven its ability in representing the data in multiple levels of abstraction, allowing for better discrimination between different classes. However, the idea of using deep learning for feature selection is not widely used in the bioinformatics field yet. In this paper, a novel multi-level feature selection approach named MLFS is proposed for selecting genes/miRNAs based on expression profiles. The approach is based on both deep and active learning. Moreover, an extension to use the technique for miRNAs is presented by considering the biological relation between miRNAs and genes. Experimental results show that the approach was able to outperform classical feature selection methods in hepatocellular carcinoma (HCC) by 9%, lung cancer by 6% and breast cancer by around 10% in F1-measure. Results also show the enhancement in F1-measure of our approach over recently related work in [1] and [2].

  8. Electronically active defects in the Cu2ZnSn(Se,S)4 alloys as revealed by transient photocapacitance spectroscopy

    Science.gov (United States)

    Miller, D. Westley; Warren, Charles W.; Gunawan, Oki; Gokmen, Tayfun; Mitzi, David B.; Cohen, J. David

    2012-10-01

    Transient photocapacitance (TPC) spectra were obtained on a series of Cu2ZnSn(Se,S)4 absorber devices with varying Se:S ratios, providing bandgaps (Eg) between 1 eV and 1.5 eV. Efficiencies varied between 8.3% and 9.3% for devices with Eg ≤ 1.2 eV and were near 6.5% for devices with Eg ≥ 1.4 eV. The TPC spectra revealed a band-tail region with Urbach energies at or below 18 meV for the first group, but in the 25-30 meV range for the higher band-gap samples. A deeper defect band centered near 0.8 eV was also observed in most samples. We identified a correlation between the Urbach energies and the voltage deficit in these devices.

  9. Note: Pulsed single longitudinal mode optical parametric oscillator for sub-Doppler spectroscopy of jet cooled transient species

    Science.gov (United States)

    Zhang, Qiang; Zhu, Boxing; Zhang, Deping; Gu, Jingwang; Zhao, Dongfeng; Chen, Yang

    2017-12-01

    We present a pulsed single longitudinal mode optical parametric oscillator that was recently constructed for sub-Doppler spectroscopic studies of transient species in a supersonic slit jet expansion environment. The system consists of a Littman-type grazing-incidence-grating resonator and a KTP crystal and is pumped at 532 nm. By spatially filtering the pump laser beam and employing an active cavity-length-stabilization scheme, a frequency down-conversion efficiency up to 18% and generation of Fourier-transform limited pulses with a typical pulse duration of ˜5.5 ns and a bandwidth less than 120 MHz have been achieved. In combination with a slit jet expansion, a sub-Doppler spectrum of SiC2 has been recorded at ˜498 nm, showing a spectral resolution of Δν/ν ≈ 6.2 × 10-7.

  10. Vena cava filters and thrombolytic therapeutic monitoring based on functional near-infrared spectroscopy for deep vein thrombosis

    Science.gov (United States)

    Pan, Boan; Liu, Weichao; Fang, Xiang; Zhao, Ke; Li, Ting

    2018-02-01

    Deep vein thrombosis (DVT), happening in inpatients usually and especially with the postoperative population, is a serious disease characterized by an increased incidence. The venography is the golden standard to diagnose DVT. However, it involves invasive contrast agent injection and give patients physical and mental pressure. Functional nearinfrared spectroscopy (fNIRS) has been reported recently to diagnose DVT. Thrombolytic therapy activates the dissolution system with an exogenous activator that dissolves coronary thrombosis. The vena cava filter is a medical filter used for the treatment of thrombosis and the prevention of pulmonary embolism. Here we attempt to use portable NIRS for the DVT monitoring in the whole process of vena cava filter implantation and thrombolytic treatment, and contrast the patients of untreated, vena cava filter implantation and thrombolytic treatment. 19 DVT patients and 12 normal subjects were recruited. Thereinto, 7 patients have taken vena cava filter implantation, and 6 patients have taken the thrombolytic treatment. It was found that deoxyhemoglobins (Δ[Hb]) fluctuates and even increases in DVT. After vena cava filter implantation, Δ[Hb] increases first, then decreases. However, it emerges the rising trend and converge to the curves of normal subjects in thrombolytic treatment. The oxyhemoglobins (Δ[HbO2]) emerges opposite trend in most paradigms. The findings reveal the potential of fNIRS for monitoring DVT and therapeutic effect evaluation of thrombolysis and vena cava filters.

  11. spectroscopy

    African Journals Online (AJOL)

    Aghomotsegin

    2015-10-14

    Oct 14, 2015 ... characterized by using phenotypic, API and Fourier transform infrared (FTIR) spectroscopy methods. One hundred and fifty-seven (157) strains were isolated from 13 cheese samples, and identification test was performed for 83 strains. At the end of the study, a total of 22 Lactococcus sp., 36 Enterecoccus ...

  12. Theory of deep level trap effects on generation-recombination noise in HgCdTe photoconductors

    International Nuclear Information System (INIS)

    Iverson, A.E.; Smith, D.L.

    1985-01-01

    We present a theory of the effect of deep level centers on the generation-recombination (g-r) noise and responsivity of an intrinsic photoconductor. The deep level centers can influence the g-r noise and responsivity in three main ways: (i) they can shorten the bulk carrier lifetime by Shockley--Read--Hall recombination; (ii) for some values of the capture cross sections, deep level densities, and temperature, the deep levels can trap a significant fraction of the photogenerated minority carriers. This trapping reduces the effective minority carrier mobility and diffusivity and thus reduces the effect of carrier sweep out on both g-r noise and responsivity; (iii) the deep level centers add a new thermal noise source, which results from fluctuations between bound and free carriers. The strength of this new noise source decreases with decreasing temperature at a slower rate than band-to-band thermal g-r noise. Calculations have been performed for a X = 0.21, n-type Hg/sub 1-x/Cd/sub x/Te photoconductor using the parameters of a commonly occurring deep level center in this material. We find that for typical operating conditions photoconductive detector performance begins to degrade as the deep level density begins to exceed 10 16 cm -3

  13. Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Alnoor, Hatim, E-mail: hatim.alnoor@liu.se; Chey, Chan Oeurn; Pozina, Galia; Willander, Magnus; Nur, Omer [Department of Science and Technology (ITN), Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden); Liu, Xianjie; Khranovskyy, Volodymyr [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-583 81 Linköping (Sweden)

    2015-08-15

    Hexagonal c-axis oriented zinc oxide (ZnO) nanorods (NRs) with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL) spectra were collected for all samples. Cathodoluminescence (CL) spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE) to the deep-level emission (DLE) peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h), which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h) will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.

  14. Ligand-field symmetry effects in Fe(ii) polypyridyl compounds probed by transient X-ray absorption spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Hana; Strader, Matthew L.; Hong, Kiryong; Jamula, Lindsey; Gullikson, Eric M.; Kim, Tae Kyu; de Groot, Frank M. F.; McCusker, James K.; Schoenlein, Robert W.; Huse, Nils

    2012-01-01

    Ultrafast excited-state evolution in polypyridyl FeII complexes are of fundamental interest for understanding the origins of the sub-ps spin-state changes that occur upon photoexcitation of this class of compounds as well as for the potential impact such ultrafast dynamics have on incorporation of these compounds in solar energy conversion schemes or switchable optical storage technologies. We have demonstrated that ground-state and, more importantly, ultrafast time-resolved x-ray absorption methods can offer unique insights into the interplay between electronic and geometric structure that underpin the photo-induced dynamics of this class of compounds. The present contribution examines in greater detail how the symmetry of the ligand field surrounding the metal ion can be probed using these x-ray techniques. In particular, we show that steady-state K-edge spectroscopy of the nearest-neighbour nitrogen atoms reveals the characteristic chemical environment of the respective ligands and suggests an interesting target for future charge-transfer femtosecond and attosecond spectroscopy in the x-ray water window.

  15. Electronic structure of deep levels in silicon. A study of gold, magnesium, and iron centers in silicon

    International Nuclear Information System (INIS)

    Thilderkvist, A. L.

    1994-02-01

    The electronic structure of gold, magnesium and iron related deep centers in silicon is investigated. Their deep and shallow levels are studied by means of fourier transform spectroscopy, combined with uniaxial stress and Zeeman spectroscopy. The neutral substitutional gold center in silicon is investigated and the center is paramagnetic, S=1/2, with g||≅2.8 and g≅0, and has a static distortion. Reorientation between different equivalent distortions is observed even at 1.9 K. A gold pair center in silicon is studied and several line series, with a zero-phonon line followed by several phonon replicas, are observed. Uniaxial stress and Zeeman results reveal a trigonal symmetry of the center, which together with the high dissociation energy of 1.7 eV suggests that the center consists of two nearest-neighbor substitutional gold atoms. A divacancy model is employed to explain the electronic properties of the center. The interstitial magnesium double donor in silicon in its two charge states Mg o and Mg + is investigated. Deviations in the binding energies of the excited states from those calculated within the effective-mass theory (EMT) are found and explained by a perturbation in the central-cell region. The quadratic Zeeman effect of shallow donors in silicon is analyzed within the framework of the EMT using a numerical approach. The wave functions are calculated in a discrete radial mesh and the Zeeman Hamiltonian has be evaluated for the lowest excited states for fields up to 6 T. The neutral interstitial iron defect in silicon gives rise to two sets of line spectra. The first set arises when an electron is excited to a shallow donor like state where the electron is decoupled from the Fe + core which has a 4 T 1 ground state term. The second set arises when an excited electron of a 1 symmetry is coupled by exchange interaction to the core, yielding at 5 T 1 final state. Experiments determine the multiplet splitting of the 4 T 1 and 5 T 1 states due to spring

  16. Oxygenation level and hemoglobin concentration in experimental tumor estimated by diffuse optical spectroscopy

    Science.gov (United States)

    Orlova, A. G.; Kirillin, M. Yu.; Volovetsky, A. B.; Shilyagina, N. Yu.; Sergeeva, E. A.; Golubiatnikov, G. Yu.; Turchin, I. V.

    2017-07-01

    Using diffuse optical spectroscopy the level of oxygenation and hemoglobin concentration in experimental tumor in comparison with normal muscle tissue of mice have been studied. Subcutaneously growing SKBR-3 was used as a tumor model. Continuous wave fiber probe diffuse optical spectroscopy system was employed. Optical properties extraction approach was based on diffusion approximation. Decreased blood oxygen saturation level and increased total hemoglobin content were demonstrated in the neoplasm. The main reason of such differences between tumor and norm was significant elevation of deoxyhemoglobin concentration in SKBR-3. The method can be useful for diagnosis of tumors as well as for study of blood flow parameters of tumor models with different angiogenic properties.

  17. Water-induced charge transport in tablets of microcrystalline cellulose of varying density: dielectric spectroscopy and transient current measurements

    International Nuclear Information System (INIS)

    Nilsson, Martin; Alderborn, Goeran; Stroemme, Maria

    2003-01-01

    Room temperature dielectric frequency response data taken over 13 decades in frequency on microcrystalline cellulose (MCC) tablets of varying density are presented. The frequency response shows on three different processes: the first one is a high-frequency relaxation process whose magnitude increases and reaches a plateau as the tablet density increases. This process is associated with orientational motions of local chain segments via glycosidic bonds. The second relaxation process, related to the presence of water in the MCC matrix, is insensitive to changes in tablet density. At lower frequencies, dc-like imperfect charge transport dominates the dielectric spectrum. The dc conductivity was found to decrease with increasing tablet density and increase exponentially with increasing humidity. Transient current measurements indicated that two different ionic species, protons and OH - ions, lied behind the observed conductivity. At ambient humidity of 22%, only one in a billion of the water molecules present in the tablet matrix participated in long range dc conduction. The diffusion coefficient of the protons and OH - ions were found to be of the order of 10 -9 cm 2 /s, which is the same as for small salt building ions in MCC. This shows that ionic drugs leaving a tablet matrix may diffuse in the same manner as the constituent ions of water and, thus, elucidates the necessity to understand the water transport properties of excipient materials to be able to tailor the drug release process from pharmaceutical tablets

  18. Transient absorption spectroscopy in biology using the Super-ACO storage ring FEL and the synchrotron radiation combination

    International Nuclear Information System (INIS)

    Renault, Eric; Nahon, Laurent; Garzella, David; Nutarelli, Daniele; De Ninno, Giovanni; Hirsch, Matthias; Couprie, Marie Emmanuelle

    2001-01-01

    The Super-ACO storage ring FEL, covering the UV range down to 300 nm with a high average power (300 mW at 350 nm) together with a high stability and long lifetime, is a unique tool for the performance of users applications. We present here the first pump-probe two color experiments on biological species using a storage ring FEL coupled to the synchrotron radiation. The intense UV pulse of the Super-ACO FEL is used to prepare a high initial concentration of chromophores in their first singlet electronic excited state. The nearby bending magnet synchrotron radiation provides, on the other hand a pulsed, white light continuum (UV-IR), naturally synchronized with the FEL pulses and used to probe the photochemical subsequent events and the associated transient species. We have demonstrated the feasibility with a dye molecule (POPOP) observing a two-color effect, signature of excited state absorption and a temporal signature with Acridine. Applications on various chromophores of biological interest are carried out, such as the time-resolved absorption study of the first excited state of Acridine

  19. Transient absorption spectroscopy in biology using the Super-ACO storage ring FEL and the synchrotron radiation combination

    CERN Document Server

    Renault, E; De Ninno, G; Garzella, D; Hirsch, M; Nahon, L; Nutarelli, D

    2001-01-01

    The Super-ACO storage ring FEL, covering the UV range down to 300 nm with a high average power (300 mW at 350 nm) together with a high stability and long lifetime, is a unique tool for the performance of users applications. We present here the first pump-probe two color experiments on biological species using a storage ring FEL coupled to the synchrotron radiation. The intense UV pulse of the Super-ACO FEL is used to prepare a high initial concentration of chromophores in their first singlet electronic excited state. The nearby bending magnet synchrotron radiation provides, on the other hand a pulsed, white light continuum (UV-IR), naturally synchronized with the FEL pulses and used to probe the photochemical subsequent events and the associated transient species. We have demonstrated the feasibility with a dye molecule (POPOP) observing a two-color effect, signature of excited state absorption and a temporal signature with Acridine. Applications on various chromophores of biological interest are carried out,...

  20. The role of surface and deep-level defects on the emission of tin oxide quantum dots

    International Nuclear Information System (INIS)

    Kumar, Vinod; Kumar, Vijay; Som, S; Ntwaeaborwa, O M; Swart, H C; Neethling, J H; Lee, Mike

    2014-01-01

    This paper reports on the role of surface and deep-level defects on the blue emission of tin oxide quantum dots (SnO 2 QDs) synthesized by the solution-combustion method at different combustion temperatures. X-ray diffraction studies showed the formation of a single rutile SnO 2 phase with a tetragonal lattice structure. High resolution transmission electron microscopy studies revealed an increase in the average dot size from 2.2 to 3.6 nm with an increase of the combustion temperature from 350 to 550 °C. A decrease in the band gap value from 3.37 to 2.76 eV was observed with the increase in dot size due to the quantum confinement effect. The photoluminescence emission was measured for excitation at 325 nm and it showed a broad blue emission band for all the combustion temperatures studied. This was due to the creation of various oxygen and tin vacancies/defects as confirmed by x-ray photoelectron spectroscopy data. The origin of the blue emission in the SnO 2 QDs is discussed with the help of an energy band diagram. (paper)

  1. Rapid High-Level Production of Functional HIV Broadly Neutralizing Monoclonal Antibodies in Transient Plant Expression Systems

    Science.gov (United States)

    Rosenberg, Yvonne; Sack, Markus; Montefiori, David; Forthal, Donald; Mao, Lingjun; -Abanto, Segundo Hernandez; Urban, Lori; Landucci, Gary; Fischer, Rainer; Jiang, Xiaoming

    2013-01-01

    Passive immunotherapy using anti-HIV broadly neutralizing monoclonal antibodies (mAbs) has shown promise as an HIV treatment, reducing mother-to-child-transmission (MTCT) of simian/human immunodeficiency virus (SHIV) in non-human primates and decreasing viral rebound in patients who ceased receiving anti-viral drugs. In addition, a cocktail of potent mAbs may be useful as mucosal microbicides and provide an effective therapy for post-exposure prophylaxis. However, even highly neutralizing HIV mAbs used today may lose their effectiveness if resistance occurs, requiring the rapid production of new or engineered mAbs on an ongoing basis in order to counteract the viral resistance or the spread of a certain HIV-1 clade in a particular region or patient. Plant-based expression systems are fast, inexpensive and scalable and are becoming increasingly popular for the production of proteins and monoclonal antibodies. In the present study, Agrobacterium-mediated transient transfection of plants, utilizing two species of Nicotiana, have been tested to rapidly produce high levels of an HIV 89.6PΔ140env and several well-studied anti-HIV neutralizing monoclonal antibodies (b12, 2G12, 2F5, 4E10, m43, VRC01) or a single chain antibody construct (m9), for evaluation in cell-based viral inhibition assays. The protein-A purified plant-derived antibodies were intact, efficiently bound HIV envelope, and were equivalent to, or in one case better than, their counterparts produced in mammalian CHO or HEK-293 cells in both neutralization and antibody dependent viral inhibition assays. These data indicate that transient plant-based transient expression systems are very adaptable and could rapidly generate high levels of newly identified functional recombinant HIV neutralizing antibodies when required. In addition, they warrant detailed cost-benefit analysis of prolonged incubation in plants to further increase mAb production. PMID:23533588

  2. Rapid high-level production of functional HIV broadly neutralizing monoclonal antibodies in transient plant expression systems.

    Directory of Open Access Journals (Sweden)

    Yvonne Rosenberg

    Full Text Available Passive immunotherapy using anti-HIV broadly neutralizing monoclonal antibodies (mAbs has shown promise as an HIV treatment, reducing mother-to-child-transmission (MTCT of simian/human immunodeficiency virus (SHIV in non-human primates and decreasing viral rebound in patients who ceased receiving anti-viral drugs. In addition, a cocktail of potent mAbs may be useful as mucosal microbicides and provide an effective therapy for post-exposure prophylaxis. However, even highly neutralizing HIV mAbs used today may lose their effectiveness if resistance occurs, requiring the rapid production of new or engineered mAbs on an ongoing basis in order to counteract the viral resistance or the spread of a certain HIV-1 clade in a particular region or patient. Plant-based expression systems are fast, inexpensive and scalable and are becoming increasingly popular for the production of proteins and monoclonal antibodies. In the present study, Agrobacterium-mediated transient transfection of plants, utilizing two species of Nicotiana, have been tested to rapidly produce high levels of an HIV 89.6PΔ140env and several well-studied anti-HIV neutralizing monoclonal antibodies (b12, 2G12, 2F5, 4E10, m43, VRC01 or a single chain antibody construct (m9, for evaluation in cell-based viral inhibition assays. The protein-A purified plant-derived antibodies were intact, efficiently bound HIV envelope, and were equivalent to, or in one case better than, their counterparts produced in mammalian CHO or HEK-293 cells in both neutralization and antibody dependent viral inhibition assays. These data indicate that transient plant-based transient expression systems are very adaptable and could rapidly generate high levels of newly identified functional recombinant HIV neutralizing antibodies when required. In addition, they warrant detailed cost-benefit analysis of prolonged incubation in plants to further increase mAb production.

  3. Direct Imaging of Transient Fano Resonances in N_{2} Using Time-, Energy-, and Angular-Resolved Photoelectron Spectroscopy.

    Science.gov (United States)

    Eckstein, Martin; Yang, Chung-Hsin; Frassetto, Fabio; Poletto, Luca; Sansone, Giuseppe; Vrakking, Marc J J; Kornilov, Oleg

    2016-04-22

    Autoionizing Rydberg states of molecular N_{2} are studied using time-, energy-, and angular-resolved photoelectron spectroscopy. A femtosecond extreme ultraviolet pulse with a photon energy of 17.5 eV excites the resonance and a subsequent IR pulse ionizes the molecule before the autoionization takes place. The angular-resolved photoelectron spectra depend on pump-probe time delay and allow for the distinguishing of two electronic states contributing to the resonance. The lifetime of one of the contributions is determined to be 14±1  fs, while the lifetime of the other appears to be significantly shorter than the time resolution of the experiment. These observations suggest that the Rydberg states in this energy region are influenced by the effect of interference stabilization and merge into a complex resonance.

  4. Radon 222 levels in deep well waters of Toluca municipality (county)

    International Nuclear Information System (INIS)

    Olguin Gutierrez, Maria Teresa.

    1990-01-01

    The levels of Radon 222 were determined in 46 deep (50-180m) wells in the city and county of Toluca, as well as the annual radiation dose that the stomach admits when ingesting such water. The method used for the quantification of Radon 222 was liquid scintillation counting. The result revealed that levels of Radon 222 in the studied area in the range of 0 to 320 pCi l -1 . In the case of the equivalent annual dose that the stomach (empty) admits due to ingestion of water from the wells, values are in an interval between 0 to 95 mrem a -1 . This values are well below the level established by the International Commission of Radiological Protection (ICRP). The wells that had the higher concentration of Radon 222 were found in the regions of Lodo Prieto, Seminario; San Antonio Buenavista and La Trinidad Huichochitlan. (Author)

  5. Occlusal Disharmony Transiently Impairs Learning and Memory in the Mouse by Increasing Dynorphin A Levels in the Amygdala.

    Science.gov (United States)

    Yamada, Kentaro; Ono, Yumie; Kubo, Kin-Ya; Yamamoto, Toshiharu; Onozuka, Minoru

    2013-05-01

    Occlusal disharmony sometimes causes not only stiffness of neck but also psychiatric depression, suggesting that the condition of oral cavity may affect the central nervous system. Dynorphin A is an endogenous opioid peptide that specifically binds the κ-opioid receptor and has a protective role against stress. Dynorphinergic nervous system is intensely distributed in the amygdala and hippocampus that are coping areas with stress. As a model of malocclusion, we placed dental resin on the molars to increase the occlusal vertical dimension (bite-raise). After various survival times, we analyzed the amygdala and hippocampus by immunohistochemistry and immunosorbent assay (ELISA). Furthermore, the effects on learning and memory were assessed by Morris water maze test. In the amygdala, the levels of dynorphin A were increased on the 1st day after increasing the vertical dimension as indicated by immunohistochemical and ELISA assessments. The levels of dynorphin A returned to control levels on the 5th day. In the hippocampus, there were no noticeable changes in dynorphin A levels. The water maze test indicated that increasing the vertical dimension caused longer escape latency times on the 3rd day compared to those of sham-operated group. However, the bite-raised mice treated with a dynorphin antagonist, nor-binaltorphimine, showed similar escape latency times to the times of sham-operated group, even on the 3rd day. These results suggest that occlusal disharmony causes stress resulting in a transient increase of dynorphin A levels at least in the amygdala and that the increased dynorphin A levels transiently impair learning and memory.

  6. Transient electromagnetic detecting technique for water hazard to the roof of fully mechanized sub-level caving face

    Energy Technology Data Exchange (ETDEWEB)

    Yu Jing-cun; Liu Zhi-xin; Tang Jin-yun; Wang Yang-zhou [China University of Mining & Technology, Xuzhou (China). School of Resources and Geoscience Science

    2007-07-01

    In coal mining, with the popularization of fully mechanized equipment, the roof control becomes more and more important. The development of water body in roofs may seriously affect the efficiency of the fully mechanized mining, quite possible to cause an accident in working face. Therefore, to make clear the position of a water body located in roofs so as to provide a basis for water drainage borehole layout is an urgent problem to be solved by geophysical exploration. Based on the transient electromagnetic theory and the technique used on ground surface and on the actual situation in underground coal mines, a square superimposed loop device (2 m in side length) which is non-contact and multi-turns was developed to detect the water bodies in coal seam roofs. Based on the 'smoke ring effect' theory and the physical simulation criterion, the mathematical model for calculating the apparent resistivity of full space transient electromagnetism is deduced. In addition, the water detection technology for the roof of fully mechanized sub-level caving face was researched and applied in several coal mines, which has been verified by boreholes and mining practice, indicating that this method is very effective in detecting the water source in the roof of fully mechanized sub-level caving face. 11 refs., 5 figs.

  7. Tumor-promoting phorbol ester transiently down-modulates the p53 level and blocks the cell cycle

    DEFF Research Database (Denmark)

    Skouv, J.; Jensen, P O; Forchhammer, J

    1994-01-01

    Activation of the protein kinase C signaling pathway by tumor-promoting phorbol esters, such as 4 beta-phorbol 12-myristate 13-acetate (PMA), induced a decrease in the level of p53 mRNA in several serum-starved human cell lines. Also, the tumor-promoting phosphatase inhibitor okadaic acid induced...... a decrease in the p53 mRNA level in the cell lines. Normal diploid as well as various tumor cell lines were tested. Two tumor cell lines, HeLa and A549, both containing the wild-type p53 gene, but very different levels of p53 protein, were studied in detail. In both cell lines, the level of p53 m......RNA was minimal after 9 h of exposure to PMA. After approximately 120 h, the p53 mRNA level was similar to the pretreatment level. PMA induced a similar transient decrease in the level of p53 protein in the A549 cell line. The decrease in the p53 mRNA level could not be explained by changes in the transcriptional...

  8. Automatic recognition of severity level for diagnosis of diabetic retinopathy using deep visual features.

    Science.gov (United States)

    Abbas, Qaisar; Fondon, Irene; Sarmiento, Auxiliadora; Jiménez, Soledad; Alemany, Pedro

    2017-11-01

    Diabetic retinopathy (DR) is leading cause of blindness among diabetic patients. Recognition of severity level is required by ophthalmologists to early detect and diagnose the DR. However, it is a challenging task for both medical experts and computer-aided diagnosis systems due to requiring extensive domain expert knowledge. In this article, a novel automatic recognition system for the five severity level of diabetic retinopathy (SLDR) is developed without performing any pre- and post-processing steps on retinal fundus images through learning of deep visual features (DVFs). These DVF features are extracted from each image by using color dense in scale-invariant and gradient location-orientation histogram techniques. To learn these DVF features, a semi-supervised multilayer deep-learning algorithm is utilized along with a new compressed layer and fine-tuning steps. This SLDR system was evaluated and compared with state-of-the-art techniques using the measures of sensitivity (SE), specificity (SP) and area under the receiving operating curves (AUC). On 750 fundus images (150 per category), the SE of 92.18%, SP of 94.50% and AUC of 0.924 values were obtained on average. These results demonstrate that the SLDR system is appropriate for early detection of DR and provide an effective treatment for prediction type of diabetes.

  9. Sea-level and deep-sea-temperature variability over the past 5.3 million years.

    Science.gov (United States)

    Rohling, E J; Foster, G L; Grant, K M; Marino, G; Roberts, A P; Tamisiea, M E; Williams, F

    2014-04-24

    Ice volume (and hence sea level) and deep-sea temperature are key measures of global climate change. Sea level has been documented using several independent methods over the past 0.5 million years (Myr). Older periods, however, lack such independent validation; all existing records are related to deep-sea oxygen isotope (δ(18)O) data that are influenced by processes unrelated to sea level. For deep-sea temperature, only one continuous high-resolution (Mg/Ca-based) record exists, with related sea-level estimates, spanning the past 1.5 Myr. Here we present a novel sea-level reconstruction, with associated estimates of deep-sea temperature, which independently validates the previous 0-1.5 Myr reconstruction and extends it back to 5.3 Myr ago. We find that deep-sea temperature and sea level generally decreased through time, but distinctly out of synchrony, which is remarkable given the importance of ice-albedo feedbacks on the radiative forcing of climate. In particular, we observe a large temporal offset during the onset of Plio-Pleistocene ice ages, between a marked cooling step at 2.73 Myr ago and the first major glaciation at 2.15 Myr ago. Last, we tentatively infer that ice sheets may have grown largest during glacials with more modest reductions in deep-sea temperature.

  10. Constraints on sea level during the Pliocene: Records from the deep Pacific Ocean

    Science.gov (United States)

    Woodard, S. C.; Rosenthal, Y.; Miller, K. G.; Wright, J. D.; Chiu, B. K.

    2013-12-01

    To reconstruct sea level during the transition from peak late Pliocene warmth (~3.15 Ma) to the onset of N. Hemisphere glaciation (~2.75 Ma), we generated high resolution stable isotope (δ18O, δ13C) and trace metal (Mg/Ca) records using benthic foraminifera, Uvigerina sp., from northwest Pacific ODP Site 1208 (3350 m water depth). During the peak late Pliocene warmth Mg/Ca-derived temperature records indicate deep Pacific interglacial temperatures were not significantly warmer (+0.6 ×0.8°C) than modern and glacial temperatures were near freezing similar to the LGM. In contrast, the deep N. Atlantic (Site 607) was apparently ~3°C warmer than the modern during both Pliocene glacial and interglacial periods (Sosdian and Rosenthal, 2009), based on the Mg/Ca of P. wuellerstorfi, which may be influenced by carbonate ion effect (Elderfield et al., 2009 and refs therein). δ18O records indicate a significant long-term increase in benthic δ18O in both the N. Atlantic and N. Pacific, although the rate of increase (Δδ18O) in the N. Atlantic is approximately 3x that of the N. Pacific (Site 1208), based on least squares regressions of all glacial-interglacial data. The discrepancy in the Δδ18O between the two basins is explained by Mg/Ca-derived temperature records. Results from Site 1208 show that the deep Pacific experienced no long-term cooling over the period 3.15-2.7 Ma when the deep N. Atlantic cooled by ~2.5°C on average. The relatively stable Pacific deep-water record provides the more reliable reconstructions of sea-level changes. From 3.15-2.7 Ma, Pacific δ18O data records an average increase of ~0.19× 0.08 per mil implying a sea level drop of 19 m × 8 m. After correcting the N. Atlantic record for temperature, we find the long term δ18O change from 3.15-2.7 Ma is ~0.23×0.1 per mil which equates to a peak of 23 m × 10 m. Our estimates are further corroborated by foraminiferal calcite δ18O recorded during Pliocene peak interglacials KM3 and G17. The

  11. Steady-state and transient performance of HVDC link based 3-level ...

    African Journals Online (AJOL)

    Administrateur

    DC (HVDC) transmission systems based on three-level voltage source converters. The study involves ..... voltage drops due to the currents across the impedance .... IEEE/PES Transmission and Distribution Conference &. Exhibition: Asia and ...

  12. Should the U.S. proceed to consider licensing deep geological disposal of high-level nuclear waste

    International Nuclear Information System (INIS)

    Curtiss, J.R.

    1993-01-01

    The United States, as well as other countries facing the question of how to handle high-level nuclear waste, has decided that the most appropriate means of disposal is in a deep geologic repository. In recent years, the Radioactive Waste Management Committee of the Nuclear Energy Agency has developed several position papers on the technical achievability of deep geologic disposal, thus demonstrating the serious consideration of deep geologic disposal in the international community. The Committee has not, as yet, formally endorsed disposal in a deep geologic repository as the preferred method of handling high-level nuclear waste. The United States, on the other hand, has studied the various methods of disposing of high-level nuclear waste, and has determined that deep geologic disposal is the method that should be developed. The purpose of this paper is to present a review of the United States' decision on selecting deep geologic disposal as the preferred method of addressing the high-level waste problem. It presents a short history of the steps taken by the U.S. in determining what method to use, discusses the NRC's waste Confidence Decision, and provides information on other issues in the U.S. program such as reconsideration of the final disposal standard and the growing inventory of spent fuel in storage

  13. Spin relaxation dynamics of holes in intrinsic GaAs quantum wells studied by transient circular dichromatic absorption spectroscopy at room temperature.

    Science.gov (United States)

    Fang, Shaoyin; Zhu, Ruidan; Lai, Tianshu

    2017-03-21

    Spin relaxation dynamics of holes in intrinsic GaAs quantum wells is studied using time-resolved circular dichromatic absorption spectroscopy at room temperature. It is found that ultrafast dynamics is dominated by the cooperative contributions of band filling and many-body effects. The relative contribution of the two effects is opposite in strength for electrons and holes. As a result, transient circular dichromatic differential transmission (TCD-DT) with co- and cross-circularly polarized pump and probe presents different strength at several picosecond delay time. Ultrafast spin relaxation dynamics of excited holes is sensitively reflected in TCD-DT with cross-circularly polarized pump and probe. A model, including coherent artifact, thermalization of nonthermal carriers and the cooperative contribution of band filling and many-body effects, is developed, and used to fit TCD-DT with cross-circularly polarized pump and probe. Spin relaxation time of holes is achieved as a function of excited hole density for the first time at room temperature, and increases with hole density, which disagrees with a theoretical prediction based on EY spin relaxation mechanism, implying that EY mechanism may be not dominant hole spin relaxation mechanism at room temperature, but DP mechanism is dominant possibly.

  14. Excited state electron and energy relays in supramolecular dinuclear complexes revealed by ultrafast optical and X-ray transient absorption spectroscopy.

    Science.gov (United States)

    Hayes, Dugan; Kohler, Lars; Hadt, Ryan G; Zhang, Xiaoyi; Liu, Cunming; Mulfort, Karen L; Chen, Lin X

    2018-01-28

    The kinetics of photoinduced electron and energy transfer in a family of tetrapyridophenazine-bridged heteroleptic homo- and heterodinuclear copper(i) bis(phenanthroline)/ruthenium(ii) polypyridyl complexes were studied using ultrafast optical and multi-edge X-ray transient absorption spectroscopies. This work combines the synthesis of heterodinuclear Cu(i)-Ru(ii) analogs of the homodinuclear Cu(i)-Cu(i) targets with spectroscopic analysis and electronic structure calculations to first disentangle the dynamics at individual metal sites by taking advantage of the element and site specificity of X-ray absorption and theoretical methods. The excited state dynamical models developed for the heterodinuclear complexes are then applied to model the more challenging homodinuclear complexes. These results suggest that both intermetallic charge and energy transfer can be observed in an asymmetric dinuclear copper complex in which the ground state redox potentials of the copper sites are offset by only 310 meV. We also demonstrate the ability of several of these complexes to effectively and unidirectionally shuttle energy between different metal centers, a property that could be of great use in the design of broadly absorbing and multifunctional multimetallic photocatalysts. This work provides an important step toward developing both a fundamental conceptual picture and a practical experimental handle with which synthetic chemists, spectroscopists, and theoreticians may collaborate to engineer cheap and efficient photocatalytic materials capable of performing coulombically demanding chemical transformations.

  15. Characterizing the Solvated Structure of Photoexcited [Os(terpy2]2+ with X-ray Transient Absorption Spectroscopy and DFT Calculations

    Directory of Open Access Journals (Sweden)

    Xiaoyi Zhang

    2016-02-01

    Full Text Available Characterizing the geometric and electronic structures of individual photoexcited dye molecules in solution is an important step towards understanding the interfacial properties of photo-active electrodes. The broad family of “red sensitizers” based on osmium(II polypyridyl compounds often undergoes small photo-induced structural changes which are challenging to characterize. In this work, X-ray transient absorption spectroscopy with picosecond temporal resolution is employed to determine the geometric and electronic structures of the photoexcited triplet state of [Os(terpy2]2+ (terpy: 2,2′:6′,2″-terpyridine solvated in methanol. From the EXAFS analysis, the structural changes can be characterized by a slight overall expansion of the first coordination shell [OsN6]. DFT calculations supports the XTA results. They also provide additional information about the nature of the molecular orbitals that contribute to the optical spectrum (with TD-DFT and the near-edge region of the X-ray spectra.

  16. Dynamics of Charged Excitons and Biexcitons in CsPbBr3 Perovskite Nanocrystals Revealed by Femtosecond Transient-Absorption and Single-Dot Luminescence Spectroscopy.

    Science.gov (United States)

    Yarita, Naoki; Tahara, Hirokazu; Ihara, Toshiyuki; Kawawaki, Tokuhisa; Sato, Ryota; Saruyama, Masaki; Teranishi, Toshiharu; Kanemitsu, Yoshihiko

    2017-04-06

    Metal-halide perovskite nanocrystals (NCs) are promising photonic materials for use in solar cells, light-emitting diodes, and lasers. The optoelectronic properties of these devices are determined by the excitons and exciton complexes confined in their NCs. In this study, we determined the relaxation dynamics of charged excitons and biexcitons in CsPbBr 3 NCs using femtosecond transient-absorption (TA), time-resolved photoluminescence (PL), and single-dot second-order photon correlation spectroscopy. Decay times of ∼40 and ∼200 ps were obtained from the TA and PL decay curves for biexcitons and charged excitons, respectively, in NCs with an average edge length of 7.7 nm. The existence of charged excitons even under weak photoexcitation was confirmed by the second-order photon correlation measurements. We found that charged excitons play a dominant role in luminescence processes of CsPbBr 3 NCs. Combining different spectroscopic techniques enabled us to clarify the dynamical behaviors of excitons, charged excitons, and biexcitons.

  17. Perinatal nicotine treatment induces transient increases in NACHO protein levels in the rat frontal cortex

    DEFF Research Database (Denmark)

    Wichern, Franziska; Jensen, Majbrit M; Christensen, Ditte Z

    2017-01-01

    The nicotinic acetylcholine receptor (nAChR) regulator chaperone (NACHO) was recently identified as an important regulator of nAChR maturation and surface expression. Here we show that NACHO levels decrease during early postnatal development in rats. This decrease occurs earlier and to a greater...... degree in the frontal cortex (FC) compared with the hippocampus (HIP). We further show that rats exposed to nicotine during pre- and postnatal development exhibit significantly higher NACHO levels in the FC at postnatal day (PND) 21, but not at PND60. Repeated exposure to nicotine selectively during...... a single exposure to a combination of nicotine and the type II α7 nAChR positive allosteric modulator (PAM) PNU-120596, but not the type I PAM AVL-3288. These findings suggest that exposure to nAChR agonism affects NACHO protein levels, and that this effect is more pronounced during pre- or early postnatal...

  18. TECHNICAL AND ECONOMIC EVALUATION OF OPTIMAL VOLTAGE LEVEL FOR THE POWER SUPPLY OF DEEP MINE OPERATING HORIZONS

    OpenAIRE

    Shkrabets, F. P.; Ostapchuk, O. V.; Kozhevnikov, A. V.; Akulov, A. V.

    2015-01-01

    The most perspective option for possible deep mine power supply is the one with the deep input of 35 kV voltage by installing of underground 35kV/6 kV substation. This option is caused by the expected level of electrical loads, provided by mine development, the power consumers’ deep layout (considering the distance from the source to the shaft on the surface and from the shaft to the underground substation chamber) and primary and the most responsible power consumers (blind shaft lifting devi...

  19. A transient increase in total head phosphotyrosine levels is observed upon the emergence of Aedes aegypti from the pupal stage

    Directory of Open Access Journals (Sweden)

    Willy Jablonka

    2011-08-01

    Full Text Available Phosphorylation and dephosphorylation of protein tyrosine residues constitutes a major biochemical regulatory mechanism for the cell. We report a transient increase in the total tyrosine phosphorylation of the Aedes aegypti head during the first days after emergence from the pupal stage. This correlates with an initial reduction in total head protein tyrosine phosphatase (PTP activity. Similarly, phosphotyrosine (pTyr-containing bands are seen in extracts prepared from both male and female heads and are spread among a variety of structures including the antennae, proboscis and the maxillary palps combined with the proboscis. Also, mosquitoes treated with sodium orthovanadate, a classical PTP inhibitor, show reduced blood-feeding activity and higher head tyrosine phosphorylation levels. These results suggest that pTyr-mediated signalling pathways may play a role in the initial days following the emergence of the adult mosquito from the pupal stage.

  20. Influence of surface pre-treatment on the electronic levels in silicon MaWCE nanowires.

    Science.gov (United States)

    Venturi, Giulia; Castaldini, Antonio; Schleusener, Alexander; Sivakov, Vladimir; Cavallini, Anna

    2015-05-15

    Deep level transient spectroscopy (DLTS) was performed on n-doped silicon nanowires grown by metal-assisted wet chemical etching (MaWCE) with gold as the catalyst in order to investigate the energetic scheme inside the bandgap. To observe the possible dependence of the level scheme on the processing temperature, DLTS measurements were performed on the nanowires grown on a non-treated Au/Si surface and on a thermally pre-treated Au/Si surface. A noticeable modification of the configuration of the energy levels was observed, induced by the annealing process. Based on our results on these MaWCE nanowires and on literature data about deep levels in bulk silicon, some hypotheses were advanced regarding the identification of the defects responsible of the energy levels revealed.

  1. Mathematical modelling of heat production in deep geological repository of high-level nuclear waste

    International Nuclear Information System (INIS)

    Kovanda, O.

    2017-01-01

    Waste produced by nuclear industry requires special handling. Currently, there is a research taking place, focused at possibilities of nuclear waste storage in deep geological repositories, hosted in stable geological environment. The high-level nuclear waste produces significant amount of heat for a long time, which can affect either environment outside of or within the repository in a negative way. Therefore to reduce risks, it is desirable to know the principles of such heat production, which can be achieved using mathematical modeling. This thesis comes up with a general model of heat production-time dependency, dependable on initial composition of the waste. To be able to model real situations, output of this thesis needs to be utilized in an IT solution. (authors)

  2. OPG's deep geologic repository for low and intermediate level waste - recent progress

    International Nuclear Information System (INIS)

    King, F.K.

    2006-01-01

    This paper provides a status report on Canada's first project to build a permanent repository for the long-term management of radioactive waste. Ontario Power Generation has initiated a project to construct a deep geologic repository for low- and intermediate-level waste at the Bruce Nuclear Site, at a depth in the range of 600 to 800 m in an Ordovician-age argillaceous limestone formation. The project is currently undergoing an Environmental Assessment and consulting companies in the areas of environmental assessment, geoscientific site characterization, engineering and safety assessment have been hired and technical studies are underway. Seismic surveys and borehole drilling will be initiated in the fall of 2006. The next major milestone for the project is the submission of the Environmental Assessment report, currently scheduled for December 2008. (author)

  3. Anomalous behaviors of E1/E2 deep level defects in 6H silicon carbide

    International Nuclear Information System (INIS)

    Chen, X.D.; Ling, C.C.; Gong, M.; Fung, S.; Beling, C.D.; Brauer, G.; Anwand, W.; Skorupa, W.

    2005-01-01

    Deep level defects E 1 /E 2 were observed in He-implanted, 0.3 and 1.7 MeV electron-irradiated n-type 6H-SiC. Similar to others' results, the behaviors of E 1 and E 2 (like the peak intensity ratio, the annealing behaviors or the introduction rates) often varied from sample to sample. This anomalous result is not expected of E 1 /E 2 being usually considered arising from the same defect located at the cubic and hexagonal sites respectively. The present study shows that this anomaly is due to another DLTS peak overlapping with the E 1 /E 2 . The activation energy and the capture cross section of this defect are E C -0.31 eV and σ∼8x10 -14 cm 2 , respectively

  4. [Case of interval form of carbon monoxide poisoning without increased carboxyhemoglobin level diagnosed by characteristic MR spectroscopy findings].

    Science.gov (United States)

    Kamisawa, Tomoko; Ikawa, Masamichi; Hamano, Tadanori; Nagata, Miwako; Kimura, Hirohiko; Yoneda, Makoto

    2014-01-01

    A 67-year-old man living alone was admitted for acute disturbance of consciousness during winter. He presented with semicoma, a decorticate posture, and exaggerated tendon reflexes of the limbs, but brainstem reflexes were intact. The carboxyhemoglobin (COHb) level was normal in arterial blood gas on admission, and protein in cerebrospinal fluid was increased without pleocytosis. Brain MRI showed diffuse T2 high intensities in the deep white matter bilaterally without a contrast effect and abnormal T1 intensity in the pallidum. (1)H-MR spectroscopy (MRS) of the white matter lesion demonstrated findings suggesting demyelination as an increased choline peak, enhanced anaerobic metabolism as increased lactate and lipids peaks, and reduced neurons as a decreased N-acetylaspartate peak, which corresponded to delayed encephalopathy due to the interval form of carbon monoxide (CO) poisoning. The possibility of CO exposure due to coal briquette use 2 weeks before the symptomatic onset was indicated by his family, so he was diagnosed with CO poisoning. His consciousness slightly improved with corticosteroid therapy and repetitive hyperbaric oxygen therapy, but brain MRI and MRS findings did not improve. Characteristic MRS findings of leukoencephalopathy are helpful for diagnosing the interval form of CO poisoning in the case of a normal COHb level.

  5. Tuning of deep level emission in highly oriented electrodeposited ZnO nanorods by post growth annealing treatments

    International Nuclear Information System (INIS)

    Simimol, A.; Manikandanath, N. T.; Chowdhury, Prasanta; Barshilia, Harish C.; Anappara, Aji A.

    2014-01-01

    Highly dense and c-axis oriented zinc oxide (ZnO) nanorods with hexagonal wurtzite facets were deposited on fluorine doped tin oxide coated glass substrates by a simple and cost-effective electrodeposition method at low bath temperature (80 °C). The as-grown samples were then annealed at various temperatures (T A  = 100–500 °C) in different environments (e.g., zinc, oxygen, air, and vacuum) to understand their photoluminescence (PL) behavior in the ultra-violet (UV) and the visible regions. The PL results revealed that the as-deposited ZnO nanorods consisted of oxygen vacancy (V O ), zinc interstitial (Zn i ), and oxygen interstitial (O i ) defects and these can be reduced significantly by annealing in different environments at optimal annealing temperatures. However, the intensity of deep level emission increased for T A greater than the optimized values for the respective environments due to the introduction of various defect centers. For example, for T A  ≥ 450 °C in the oxygen and air environments, the density of O i defects increased, whereas, the green emission associated with V O is dominant in the vacuum annealed (T A  = 500 °C) ZnO nanorods. The UV peak red shifted after the post-growth annealing treatments in all the environments and the vacuum annealed sample exhibited highest UV peak intensity. The observations from the PL data are supported by the micro-Raman spectroscopy. The present study gives new insight into the origin of different defects that exist in the electrodeposited ZnO nanorods and how these defects can be precisely controlled in order to get the desired emissions for the opto-electronic applications

  6. Dynamics of the deep-level emission in ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Dongchao; Rueckmann, Ilja; Voss, Tobias [Institut fuer Festkoerperphysik, Universitaet Bremen (Germany)

    2010-07-01

    Due to its wide direct band gap and large exciton binding energy (60 meV), ZnO nanowires possess an efficient near band-edge emission (NBE) in UV range. Additional energy levels in the band gap of ZnO, commonly introduced by point defects such as oxygen or zinc vacancies and Cu impurities, can largely weaken the UV emission by providing extra recombination routes for the electrons in conduction band. In ZnO nanowires this deep-level emission band (DLE) is expected to be largely activated by tunneling processes of holes trapped in the surface depletion layer after optical excitation. We studied the dependence of the DLE and NBE intensities of ZnO nanowires on the excitation power at different temperatures. For the experiments, the fundamental (1064 nm) and frequency-tripled (355 nm) pulses of an Nd:YAG microchip laser were used. The additional infrared laser radiation was used to directly populate the defect levels with electrons from the valence band. Our results show that the additional infrared photons lead to a reduction of the DLE while the NBE is enhanced. We discuss the implications of our results for the models of DLE in ZnO nanowires.

  7. Intracavity OptoGalvanic Spectroscopy not suitable for ambient level radiocarbon detection.

    Science.gov (United States)

    Paul, Dipayan; Meijer, Harro A J

    2015-09-01

    IntraCavity OptoGalvanic Spectroscopy as a radiocarbon detection technique was first reported by the Murnick group at Rutgers University, Newark, NJ, in 2008. This technique for radiocarbon detection was presented with tremendous potentials for applications in various fields of research. Significantly cheaper, this technique was portrayed as a possible complementary technique to the more expensive and complex accelerator mass spectrometry. Several groups around the world started developing this technique for various radiocarbon related applications. The IntraCavity OptoGalvanic Spectroscopy setup at the University of Groningen was constructed in 2012 in close collaboration with the Murnick group for exploring possible applications in the fields of radiocarbon dating and atmospheric monitoring. In this paper we describe a systematic evaluation of the IntraCavity OptoGalvanic Spectroscopy setup at Groningen for radiocarbon detection. Since the IntraCavity OptoGalvanic Spectroscopy setup was strictly planned for dating and atmospheric monitoring purposes, all the initial experiments were performed with CO2 samples containing contemporary levels and highly depleted levels of radiocarbon. Because of recurring failures in differentiating the two CO2 samples, with the radiocarbon concentration 3 orders of magnitude apart, CO2 samples containing elevated levels of radiocarbon were prepared in-house and experimented with. All results obtained thus far at Groningen are in sharp contrast to the results published by the Murnick group and rather support the results put forward by the Salehpour group at Uppsala University. From our extensive test work, we must conclude that the method is unsuited for ambient level radiocarbon measurements, and even highly enriched CO2 samples yield insignificant signal.

  8. Deep repository for long-lived low- and intermediate-level waste. Preliminary safety assessment

    International Nuclear Information System (INIS)

    1999-11-01

    A preliminary safety assessment has been performed of a deep repository for long-lived low- and intermediate-level waste, SFL 3-5. The purpose of the study is to investigate the capacity of the facility to act as a barrier to the release of radionuclides and toxic pollutants, and to shed light on the importance of the location of the repository site. A safety assessment (SR 97) of a deep repository for spent fuel has been carried out at the same time. In SR 97, three hypothetical repository sites have been selected for study. These sites exhibit fairly different conditions in terms of hydrogeology, hydrochemistry and ecosystems. To make use of information and data from the SR 97 study, we have assumed that SFL 3-5 is co-sited with the deep repository for spent fuel. A conceivable alternative is to site SFL 3-5 as a completely separate repository. The focus of the SFL 3-5 study is a quantitative analysis of the environmental impact for a reference scenario, while other scenarios are discussed and analyzed in more general terms. Migration in the repository's near- and far-field has been taken into account in the reference scenario. Environmental impact on the three sites has also been calculated. The calculations are based on an updated forecast of the waste to be disposed of in SFL 3-5. The forecast includes radionuclide content, toxic metals and other substances that have a bearing on a safety assessment. The safety assessment shows how important the site is for safety. Two factors stand out as being particularly important: the water flow at the depth in the rock where the repository is built, and the ecosystem in the areas on the ground surface where releases may take place in the future. Another conclusion is that radionuclides that are highly mobile and long-lived, such as 36 Cl and 93 Mo , are important to take into consideration. Their being long-lived means that barriers and the ecosystems must be regarded with a very long time horizon

  9. Deep repository for long-lived low- and intermediate-level waste. Preliminary safety assessment

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-11-01

    A preliminary safety assessment has been performed of a deep repository for long-lived low- and intermediate-level waste, SFL 3-5. The purpose of the study is to investigate the capacity of the facility to act as a barrier to the release of radionuclides and toxic pollutants, and to shed light on the importance of the location of the repository site. A safety assessment (SR 97) of a deep repository for spent fuel has been carried out at the same time. In SR 97, three hypothetical repository sites have been selected for study. These sites exhibit fairly different conditions in terms of hydrogeology, hydrochemistry and ecosystems. To make use of information and data from the SR 97 study, we have assumed that SFL 3-5 is co-sited with the deep repository for spent fuel. A conceivable alternative is to site SFL 3-5 as a completely separate repository. The focus of the SFL 3-5 study is a quantitative analysis of the environmental impact for a reference scenario, while other scenarios are discussed and analyzed in more general terms. Migration in the repository's near- and far-field has been taken into account in the reference scenario. Environmental impact on the three sites has also been calculated. The calculations are based on an updated forecast of the waste to be disposed of in SFL 3-5. The forecast includes radionuclide content, toxic metals and other substances that have a bearing on a safety assessment. The safety assessment shows how important the site is for safety. Two factors stand out as being particularly important: the water flow at the depth in the rock where the repository is built, and the ecosystem in the areas on the ground surface where releases may take place in the future. Another conclusion is that radionuclides that are highly mobile and long-lived, such as {sup 36}Cl and {sup 93}Mo , are important to take into consideration. Their being long-lived means that barriers and the ecosystems must be regarded with a very long time horizon.

  10. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China)

    2014-01-28

    Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

  11. spectroscopy

    African Journals Online (AJOL)

    Aghomotsegin

    2015-10-14

    Oct 14, 2015 ... properties, API CHL50 kit are useful at genus-species level but ... After growing the isolates in the appropriate media, they were centrifuged at ... scanned 64 times at 4 cm-¹ resolution. The study ..... New York, 142 p. Sandine ...

  12. Pixel-Level Deep Segmentation: Artificial Intelligence Quantifies Muscle on Computed Tomography for Body Morphometric Analysis.

    Science.gov (United States)

    Lee, Hyunkwang; Troschel, Fabian M; Tajmir, Shahein; Fuchs, Georg; Mario, Julia; Fintelmann, Florian J; Do, Synho

    2017-08-01

    Pretreatment risk stratification is key for personalized medicine. While many physicians rely on an "eyeball test" to assess whether patients will tolerate major surgery or chemotherapy, "eyeballing" is inherently subjective and difficult to quantify. The concept of morphometric age derived from cross-sectional imaging has been found to correlate well with outcomes such as length of stay, morbidity, and mortality. However, the determination of the morphometric age is time intensive and requires highly trained experts. In this study, we propose a fully automated deep learning system for the segmentation of skeletal muscle cross-sectional area (CSA) on an axial computed tomography image taken at the third lumbar vertebra. We utilized a fully automated deep segmentation model derived from an extended implementation of a fully convolutional network with weight initialization of an ImageNet pre-trained model, followed by post processing to eliminate intramuscular fat for a more accurate analysis. This experiment was conducted by varying window level (WL), window width (WW), and bit resolutions in order to better understand the effects of the parameters on the model performance. Our best model, fine-tuned on 250 training images and ground truth labels, achieves 0.93 ± 0.02 Dice similarity coefficient (DSC) and 3.68 ± 2.29% difference between predicted and ground truth muscle CSA on 150 held-out test cases. Ultimately, the fully automated segmentation system can be embedded into the clinical environment to accelerate the quantification of muscle and expanded to volume analysis of 3D datasets.

  13. Chloroplast phylogenomic analyses resolve deep-level relationships of an intractable bamboo tribe Arundinarieae (poaceae).

    Science.gov (United States)

    Ma, Peng-Fei; Zhang, Yu-Xiao; Zeng, Chun-Xia; Guo, Zhen-Hua; Li, De-Zhu

    2014-11-01

    The temperate woody bamboos constitute a distinct tribe Arundinarieae (Poaceae: Bambusoideae) with high species diversity. Estimating phylogenetic relationships among the 11 major lineages of Arundinarieae has been particularly difficult, owing to a possible rapid radiation and the extremely low rate of sequence divergence. Here, we explore the use of chloroplast genome sequencing for phylogenetic inference. We sampled 25 species (22 temperate bamboos and 3 outgroups) for the complete genome representing eight major lineages of Arundinarieae in an attempt to resolve backbone relationships. Phylogenetic analyses of coding versus noncoding sequences, and of different regions of the genome (large single copy and small single copy, and inverted repeat regions) yielded no well-supported contradicting topologies but potential incongruence was found between the coding and noncoding sequences. The use of various data partitioning schemes in analysis of the complete sequences resulted in nearly identical topologies and node support values, although the partitioning schemes were decisively different from each other as to the fit to the data. Our full genomic data set substantially increased resolution along the backbone and provided strong support for most relationships despite the very short internodes and long branches in the tree. The inferred relationships were also robust to potential confounding factors (e.g., long-branch attraction) and received support from independent indels in the genome. We then added taxa from the three Arundinarieae lineages that were not included in the full-genome data set; each of these were sampled for more than 50% genome sequences. The resulting trees not only corroborated the reconstructed deep-level relationships but also largely resolved the phylogenetic placements of these three additional lineages. Furthermore, adding 129 additional taxa sampled for only eight chloroplast loci to the combined data set yielded almost identical

  14. DLTS study of annihilation of oxidation induced deep-level defects ...

    Indian Academy of Sciences (India)

    Administrator

    microelectronics device technologies. As technology is ... an important role in manufacturing high-speed electronic ... DLTS is a capacitance transient thermal scanning tech- ... again dipped in methanol and dried using nitrogen gun. A.

  15. Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods

    Directory of Open Access Journals (Sweden)

    Hatim Alnoor

    2015-08-01

    Full Text Available Hexagonal c-axis oriented zinc oxide (ZnO nanorods (NRs with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL spectra were collected for all samples. Cathodoluminescence (CL spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE to the deep-level emission (DLE peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h, which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.

  16. Ultrafast photo-induced nuclear relaxation of a conformationally disordered conjugated polymer probed with transient absorption and femtosecond stimulated Raman spectroscopies

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Wenjian; Donohoo-Vallett, Paul J.; Zhou, Jiawang; Bragg, Arthur E., E-mail: artbragg@jhu.edu [Department of Chemistry, Johns Hopkins University, 3400 N. Charles St., Baltimore, Maryland 21218 (United States)

    2014-07-28

    A combination of transient absorption (TAS) and femtosecond stimulated Raman (FSRS) spectroscopies were used to interrogate the photo-induced nuclear relaxation dynamics of poly(3-cyclohexyl,4-methylthiophene) (PCMT). The large difference in inter-ring dihedral angles of ground and excited-state PCMT make it an ideal candidate for studying large-amplitude vibrational relaxation associated with exciton trapping. Spectral shifting in the S{sub 1} TA spectra on sub-ps timescales (110 ± 20 and 800 ± 100 fs) is similar to spectroscopic signatures of excited-state relaxation observed with related photoexcited conjugated polymers and which have been attributed to exciton localization and a combination of resonant energy transfer and torsional relaxation, respectively. Measurements made with both techniques reveal fast PCMT S{sub 1} decay and triplet formation (τ{sub S1} = 25–32 ps), which is similar to the excited-state dynamics of short oligothiophenes and highly twisted polyconjugated molecules. On ultrafast timescales FSRS of S{sub 1} PCMT offers a new perspective on the nuclear dynamics that underlie localization of excitons in photoexcited conjugated polymers: Spectral dynamics in the C=C stretching region (1400–1600 cm{sup −1}) include a red-shift of the in-phase C=C stretching frequency, as well as a change in the relative intensity of in-phase and out-of-phase stretch intensities on a timescale of ∼100 fs. Both changes indicate an ultrafast vibrational distortion that increases the conjugation length in the region of the localized excitation and are consistent with exciton self-localization or trapping. Wavelength-dependent excited-state FSRS measurements further demonstrate that the C=C stretching frequency provides a useful spectroscopic handle for interrogating the degree of delocalization in excited conjugated polymers given the selectivity achieved via resonance enhancement.

  17. Investigation of energy levels of Er-impurity centers in Si by the method of ballistic electron emission spectroscopy

    International Nuclear Information System (INIS)

    Filatov, D. O.; Zimovets, I. A.; Isakov, M. A.; Kuznetsov, V. P.; Kornaukhov, A. V.

    2011-01-01

    The method of ballistic electron emission spectroscopy is used for the first time to study the energy spectrum of Er-impurity complexes in Si. The features are observed in the ballistic electron spectra of mesa diodes based on p + -n + Si structures with a thin (∼30 nm) p + -Si:Er surface layer in the region of ballistic-electron energies eV t lower than the conduction-band-edge energy E c in this layer. They are associated with the tunnel injection of ballistic electrons from the probe of the scanning tunnel microscope to the deep donor levels of the Er-impurity complexes in the p + -Si:Er layer with subsequent thermal excitation into the conduction band and the diffusion to the p + -n + junction and the direct tunneling in it. To verify this assumption, the ballistic-electron transport was simulated in the system of the Pt probe, native-oxide layer SiO 2 -p + -Si:Er-n + , and Si substrate. By approximating the experimental ballistic-electron spectra with the modeling spectra, the ground-state energy of the Er complex in Si was determined: E d ≈ E c − 0.27 eV. The indicated value is consistent with the data published previously and obtained from the measurements of the temperature dependence of the free-carrier concentration in Si:Er layers.

  18. Impacts of Carrier Transport and Deep Level Defects on Delayed Cathodoluminescence in Droop-Mitigating InGaN/GaN LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Zhibo; Singh, Akshay; Chesin, Jordan; Armitage, Rob; Wildeson, Isaac; Deb, Parijat; Armstrong, Andrew; Kisslinger, Kim; Stach, Eric; Gradecak, Silvija

    2017-07-25

    Prevalent droop mitigation strategies in InGaN-based LEDs require structural and/or compositional changes in the active region but are accompanied by a detrimental reduction in external quantum efficiency (EQE) due to increased Shockley-Read-Hall recombination. Understanding the optoelectronic impacts of structural modifications in InGaN/GaN quantum wells (QW) remains critical for emerging high-power LEDs. In this work, we use a combination of electron microscopy tools along with standard electrical characterization to investigate a wide range of low-droop InGaN/GaN QW designs. We find that chip-scale EQE is uncorrelated with extended well-width fluctuations observed in scanning transmission electron microscopy. Further, we observe delayed cathodoluminescence (CL) response from designs in which calculated band profiles suggest facile carrier escape from individual QWs. Samples with the slowest CL responses also exhibit the lowest EQEs and highest QW defect densities in deep level optical spectroscopy. We propose a model in which the electron beam (i) passivates deep level defect states and (ii) drives charge carrier accumulation and subsequent reduction of the built-in field across the multi-QW active region, resulting in delayed radiative recombination. Finally, we correlate CL rise dynamics with capacitance-voltage measurements and show that certain early-time components of the CL dynamics reflect the open circuit carrier population within one or more QWs.

  19. Laser Calorimetry Spectroscopy for ppm-level Dissolved Gas Detection and Analysis.

    Science.gov (United States)

    K S, Nagapriya; Sinha, Shashank; R, Prashanth; Poonacha, Samhitha; Chaudhry, Gunaranjan; Bhattacharya, Anandaroop; Choudhury, Niloy; Mahalik, Saroj; Maity, Sandip

    2017-02-20

    In this paper we report a newly developed technique - laser calorimetry spectroscopy (LCS), which is a combination of laser absorption spectroscopy and calorimetry - for the detection of gases dissolved in liquids. The technique involves determination of concentration of a dissolved gas by irradiating the liquid with light of a wavelength where the gas absorbs, and measuring the temperature change caused by the absorbance. Conventionally, detection of dissolved gases with sufficient sensitivity and specificity was done by first extracting the gases from the liquid and then analyzing the gases using techniques such as gas chromatography. Using LCS, we have been able to detect ppm levels of dissolved gases without extracting them from the liquid. In this paper, we show the detection of dissolved acetylene in transformer oil in the mid infrared (MIR) wavelength (3021 nm) region.

  20. DNCON2: improved protein contact prediction using two-level deep convolutional neural networks.

    Science.gov (United States)

    Adhikari, Badri; Hou, Jie; Cheng, Jianlin

    2018-05-01

    Significant improvements in the prediction of protein residue-residue contacts are observed in the recent years. These contacts, predicted using a variety of coevolution-based and machine learning methods, are the key contributors to the recent progress in ab initio protein structure prediction, as demonstrated in the recent CASP experiments. Continuing the development of new methods to reliably predict contact maps is essential to further improve ab initio structure prediction. In this paper we discuss DNCON2, an improved protein contact map predictor based on two-level deep convolutional neural networks. It consists of six convolutional neural networks-the first five predict contacts at 6, 7.5, 8, 8.5 and 10 Å distance thresholds, and the last one uses these five predictions as additional features to predict final contact maps. On the free-modeling datasets in CASP10, 11 and 12 experiments, DNCON2 achieves mean precisions of 35, 50 and 53.4%, respectively, higher than 30.6% by MetaPSICOV on CASP10 dataset, 34% by MetaPSICOV on CASP11 dataset and 46.3% by Raptor-X on CASP12 dataset, when top L/5 long-range contacts are evaluated. We attribute the improved performance of DNCON2 to the inclusion of short- and medium-range contacts into training, two-level approach to prediction, use of the state-of-the-art optimization and activation functions, and a novel deep learning architecture that allows each filter in a convolutional layer to access all the input features of a protein of arbitrary length. The web server of DNCON2 is at http://sysbio.rnet.missouri.edu/dncon2/ where training and testing datasets as well as the predictions for CASP10, 11 and 12 free-modeling datasets can also be downloaded. Its source code is available at https://github.com/multicom-toolbox/DNCON2/. chengji@missouri.edu. Supplementary data are available at Bioinformatics online.

  1. Transient nutation electron spin resonance spectroscopy on spin-correlated radical pairs: A theoretical analysis on hyperfine-induced nuclear modulations

    Science.gov (United States)

    Weber, Stefan; Kothe, Gerd; Norris, James R.

    1997-04-01

    The influence of anisotropic hyperfine interaction on transient nutation electron paramagnetic resonance (EPR) of light-induced spin-correlated radical pairs is studied theoretically using the density operator formalism. Analytical expressions for the time evolution of the transient EPR signal during selective microwave excitation of single transitions are derived for a model system comprised of a weakly coupled radical pair and one hyperfine-coupled nucleus with I=1/2. Zero-quantum electron coherence and single-quantum nuclear coherence are created as a result of the sudden light-induced generation of the radical pair state from a singlet-state precursor. Depending on the relative sizes of the nuclear Zeeman frequency and the secular and pseudo-secular parts of the hyperfine coupling, transitions between levels with different nuclear spin orientations are predicted to modulate the time-dependent EPR signal. These modulations are in addition to the well-known transient nutations and electron zero-quantum precessions. Our calculations provide insight into the mechanism of recent experimental observations of coherent nuclear modulations in the time-resolved EPR signals of doublets and radical pairs. Two distinct mechanisms of the modulations are presented for various microwave magnetic field strengths. The first modulation scheme arises from electron and nuclear coherences initiated by the laser excitation pulse and is "read out" by the weak microwave magnetic field. While the relative modulation depth of these oscillations with respect to the signal intensity is independent of the Rabi frequency, ω1, the frequencies of this coherence phenomenon are modulated by the effective microwave amplitude and determined by the nuclear Zeeman interaction and hyperfine coupling constants as well as the electron-electron spin exchange and dipolar interactions between the two radical pair halves. In a second mechanism the modulations are both created and detected by the microwave

  2. Quantify Glucose Level in Freshly Diabetic's Blood by Terahertz Time-Domain Spectroscopy

    Science.gov (United States)

    Chen, Hua; Chen, Xiaofeng; Ma, Shihua; Wu, Xiumei; Yang, Wenxing; Zhang, Weifeng; Li, Xiao

    2018-04-01

    We demonstrate the capability of terahertz (THz) time-domain spectroscopy (TDS) to quantify glucose level in ex vivo freshly diabetic's blood. By investigating the THz spectra of different human blood, we find out THz absorption coefficients reflect a high sensitivity to the glucose level in blood. With a quantitative analysis of 70 patients, we demonstrate that the THz absorption coefficients and the blood glucose levels perform a linear relationship. A comparative experiment between THz measurement and glucometers is also conducted with another 20 blood samples, and the results confirm that the relative error is as less as 15%. Our ex vivo human blood study indicates that THz technique has great potential application to diagnose blood glucose level in clinical practice.

  3. Neutron resonance spectroscopy on 113Cd: The p-wave levels

    International Nuclear Information System (INIS)

    Frankle, C.M.; Bowman, C.D.; Bowman, J.D.; Seestrom, S.J.; Sharapov, E.I.; Popov, Y.P.; Roberson, N.R.

    1992-01-01

    Weak levels in the compound nucleus 114 Cd were located by neutron time-of-flight spectroscopy techniques. Neutron capture measurements were performed with both a natural cadmium target and a highly enriched 113 Cd target. A total of 22 new resonances were located in the neutron energy interval 20-500 eV and were assumed to be p-wave. Resonance parameters, E 0 and gΓ n , are given for the newly identified levels. The p-wave strength function was determined to be 10 4 S 1 =2.8±0.8 and the average level spacing left-angle D 1 right-angle=14 eV. Comparison of the reduced widths with a Porter-Thomas distribution is consistent with having missed 15% of the p-wave levels

  4. A poor sealing Scenario for Deep disposal of high level waste

    International Nuclear Information System (INIS)

    Weetjens, E.

    2005-01-01

    Especially for geological disposal options in clay, the safety of the repository relies chiefly on the performance of the host formation as the main barrier. Understandably, scenarios in which this clay barrier is somehow bypassed earn great concern in PA (Performance Assessment) studies. The Poor Sealing Scenario is one of those scenarios that have been recently studied by the PA section of the Waste and Disposal department in the framework of the Belgian programme on deep disposal of high-level radwaste in Boom Clay. This scenario hypothesises that at least one disposal gallery and an access shaft have been poorly sealed off, providing a preferential pathway for RNs (radionuclides). The scenario further assumes a severe climate change, which would invert the presently downward hydraulic gradient, such that the potential impact would be maximal. The main objective is assessing the contribution from two transport processes to the overall radionuclide migration from a spent fuel repository towards the Neogene aquifer. The processes considered are advective transport through the poorly sealed repository and diffusive transport through the host formation. In addition, we would like to identify the most influential parameters with respect to repository design and performance

  5. Environmental assessment for OPG's deep geologic repository for low and intermediate level waste

    International Nuclear Information System (INIS)

    Barker, D.; Rawlings, M.; Beal, A.

    2011-01-01

    The environmental assessment process for the Deep Geologic Repository (DGR) Project was initiated very early in the planning stages. Feasibility studies were initiated in 2003, after Ontario Power Generation (OPG) and the Municipality of Kincardine signed a Memorandum of Understanding agreeing to assess options for long-term management of low and intermediate level waste (L and ILW) options at the Bruce nuclear site. The location of the DGR, in the Municipality of Kincardine, is based on a willing and informed host community. The preferred approach, the DGR at the Bruce nuclear site, was advanced based on results of feasibility studies which looked at a number of options for long-term management of L&ILW and support from the local community and their elected representatives. The federal environmental assessment of the project was initiated following the signing of a Host Community Agreement and completion of a telephone poll, the results of which indicated that the majority of Municipality of Kincardine residents support the project. The environmental assessment began in 2006 as a comprehensive study and was ultimately referred to a joint review panel process in 2009. The environmental assessment considers the potential near-term effects of the construction and operations of the proposed project. Because of the nature of the project, the assessment of effects also considers long-term effects extending out to the million year time-frame, including effects of climate change, glaciations and seismic activity. (author)

  6. The study of fracture mineralization and relationship with high level radioactive waste of deep geological repository

    International Nuclear Information System (INIS)

    Reyes, Cristina N.

    2003-01-01

    Extensive investigations of the Ordovician, Dinantian and Permo-Triassic rocks of the Sellafield area of northwest England were undertaken by United Kingdom Nirex Ltd. as a possible national site for geological disposal of intermediate and low-level radioactive waste. Very detailed studies of fracture mineralisation at Sellafield were thus put in hand by Nirex Ltd. and the results summarised by the British Geological Survey. Deep (up to 2 km) boreholes were put down with excellent core recovery. It is generally agreed that the most significant pathway for the escape of all but a very few radionuclides is by solution in and advection of groundwater. In this context, rock fracture systems are particularly important because they offer a potentially rapid pathway to the surface and the biosphere. One striking aspect of this work is that the fracture mineralisation seemingly records major and rapid fluctuations in redox conditions -sometimes during apparently continuous precipitation of cements (ferroan and non-ferroan calcites, dolomite). Carbonate cements record variations in Fe 2+ availability. Fe(III) precipitates also as oxide (hematite) and Fe(II) as sulphide (pyrite). This study focuses on these elements and valence states and also on Mn; another element susceptible to redox controls but known to respond differently from Fe. Shallow sub-surface stores or repositories would be more likely to have oxidising or fluctuating redox conditions. The mineralisation sequences documented at Sellafield are potentially promising in this context. Ferroan carbonate cements are sensitive indicators of later movement of oxidising ground waters. (author)

  7. Application of systems analysis to the disposal of high level waste in deep ocean sediments

    International Nuclear Information System (INIS)

    De Marsily, G.; Dorp, F. van

    1982-01-01

    Emplacement in deep ocean sediments is one of the disposal options being considered for solidified high level radioactive waste. Task groups set up within the framework of the NEA Seabed Working Group have been studying many aspects of this option since 1976. The methods of systems analysis have been applied to enable the various parts of the problem to be assessed within an integrated framework. This paper describes the progress made by the Systems Analysis Task Group towards the development of an overall system model. The Task Group began by separating the problem into elements and defining the interfaces between these elements. A simple overall system model was then developed and used in both a preliminary assessment and a sensitivity analysis to identify the most important parameters. These preliminary analyses used a very simple model of the overall system and therefore the results cannot be used to draw any conclusions as to the acceptability of the sub-seabed disposal option. However they served to show the utility of the systems analysis method. The work of the other task groups will focus on the important parameters so that improved results can be fed back into an improved system model. Subsequent iterations will eventually provide an input to an acceptability decision. (Auth.)

  8. Validation of a high-power, time-resolved, near-infrared spectroscopy system for measurement of superficial and deep muscle deoxygenation during exercise.

    Science.gov (United States)

    Koga, Shunsaku; Barstow, Thomas J; Okushima, Dai; Rossiter, Harry B; Kondo, Narihiko; Ohmae, Etsuko; Poole, David C

    2015-06-01

    Near-infrared assessment of skeletal muscle is restricted to superficial tissues due to power limitations of spectroscopic systems. We reasoned that understanding of muscle deoxygenation may be improved by simultaneously interrogating deeper tissues. To achieve this, we modified a high-power (∼8 mW), time-resolved, near-infrared spectroscopy system to increase depth penetration. Precision was first validated using a homogenous optical phantom over a range of inter-optode spacings (OS). Coefficients of variation from 10 measurements were minimal (0.5-1.9%) for absorption (μa), reduced scattering, simulated total hemoglobin, and simulated O2 saturation. Second, a dual-layer phantom was constructed to assess depth sensitivity, and the thickness of the superficial layer was varied. With a superficial layer thickness of 1, 2, 3, and 4 cm (μa = 0.149 cm(-1)), the proportional contribution of the deep layer (μa = 0.250 cm(-1)) to total μa was 80.1, 26.9, 3.7, and 0.0%, respectively (at 6-cm OS), validating penetration to ∼3 cm. Implementation of an additional superficial phantom to simulate adipose tissue further reduced depth sensitivity. Finally, superficial and deep muscle spectroscopy was performed in six participants during heavy-intensity cycle exercise. Compared with the superficial rectus femoris, peak deoxygenation of the deep rectus femoris (including the superficial intermedius in some) was not significantly different (deoxyhemoglobin and deoxymyoglobin concentration: 81.3 ± 20.8 vs. 78.3 ± 13.6 μM, P > 0.05), but deoxygenation kinetics were significantly slower (mean response time: 37 ± 10 vs. 65 ± 9 s, P ≤ 0.05). These data validate a high-power, time-resolved, near-infrared spectroscopy system with large OS for measuring the deoxygenation of deep tissues and reveal temporal and spatial disparities in muscle deoxygenation responses to exercise. Copyright © 2015 the American Physiological Society.

  9. Analysis of serum cortisol levels by Fourier Transform Infrared Spectroscopy for diagnosis of stress in athletes

    Directory of Open Access Journals (Sweden)

    Lia Campos Lemes

    Full Text Available Abstract Introduction Fourier-transform infrared (FT-IR spectroscopy is a technique with great potential for body fluids analyses. The aim of this study was to examine the impact of session training on cortisol concentrations in rugby players by means of infrared analysis of serum. Methods Blood collections were performed pre, post and 24 hours after of rugby training sessions. Serum cortisol was analyzed by FT-IR spectroscopy and chemiluminescent immunoassay. Results There was a significant difference between the integrated area, in the region of 1180-1102 cm-1, of the spectra for pre, post and post 24 h serums. The cortisol concentration obtained by chemiluminescent immunoassay showed no significant difference between pre, post and post 24 h. Positive correlations were obtained between the techniques (r = 0.75, post (r = 0.83 and post 24 h (r = 0.73. Conclusion The results showed no increase in cortisol levels of the players after the training sessions, as well as positive correlations indicating that FT-IR spectroscopy have produced promising results for the analysis of serum for diagnosis of stress.

  10. Total circulating microparticle levels are increased in patients with deep infiltrating endometriosis.

    Science.gov (United States)

    Munrós, J; Martínez-Zamora, M A; Tàssies, D; Coloma, J L; Torrente, M A; Reverter, J C; Carmona, F; Balasch, J

    2017-02-01

    Are the levels of total circulating cell-derived microparticles (cMPs) and circulating tissue factor-containing microparticles (cMP-TF) increased in patients with endometriosis? The levels of total cMP, but not cMP-TF, were higher in patients with endometriosis, and these were attributed to higher levels in patients with deep infiltrating endometriosis (DIE). Previous studies have reported elevated levels of total cMP in inflammatory conditions as well as higher levels of other inflammatory biomarkers in endometriosis. Increased expression of tissue factor (a transmembrane receptor for Factor VII/VIIa) in eutopic and ectopic endometrium from patients with endometriosis has been described. There is no previous data regarding total cMP and cMP-TF levels in patients with endometriosis. A prospective case-control study including two groups of patients was carried out. The E group included 65 patients with surgically confirmed endometriosis (37 with DIE lesions) and the C group comprises 33 women without surgical findings of any form of endometriosis. Patients and controls were recruited during the same 10-month period. Controls were the next patient without endometriosis undergoing surgery, after including two patients with endometriosis. Venous blood samples for total cMP and cMP-TF determinations were obtained at the time of surgery, before anesthesia at a tertiary care center. To assess total cMP, an ELISA functional assay was used and cMP-TF activity in plasma was measured using an ELISA kit. Total cMP levels in plasma were higher in the E group compared with the C group (P < 0.0001). The subanalysis of endometriosis patients with DIE or with ovarian endometriomas without DIE showed that total cMP levels were higher in the DIE group (P = 0.001). There were no statistically significant differences in cMP-TF levels among the groups analyzed. This is a preliminary study in which the sample size was arbitrarily decided, albeit in keeping with previous studies analyzing

  11. Strategic program for deep geological disposal of high level radioactive waste in China

    International Nuclear Information System (INIS)

    Wang Ju

    2004-01-01

    A strategic program for deep geological disposal of high level radioactive waste in China is proposed in this paper. A '3-step technical strategy': site selection and site characterization-site specific underground research laboratory-final repository, is proposed for the development of China's high level radioactive waste repository. The activities related with site selection and site characterization for the repository can be combined with those for the underground research laboratory. The goal of the strategy is to build China's repository around 2040, while the activities can be divided into 4 phases: 1) site selection and site characterization; 2) site confirmation and construction of underground research laboratory, 3) in-situ experiment and disposal demonstration, and 4) construction of repository. The targets and tasks for each phase are proposed. The logistic relationship among the activities is discussed. It is pointed out that the site selection and site characterization provide the basis for the program, the fundamental study and underground research laboratory study are the key support, the performance assessment plays a guiding role, while the construction of a qualified repository is the final goal. The site selection can be divided into 3 stages: comparison among pre-selected areas, comparison among pre-selected sites and confirmation of the final site. According to this strategy, the final site for China's underground research laboratory and repository will be confirmed in 2015, where the construction of an underground laboratory will be started. In 2025 the underground laboratory will have been constructed, while in around 2040, the construction of a final repository is to be completed

  12. Benefiting from deep-level diversity : How congruence between knowledge and decision rules improves team decision making and team perceptions

    NARCIS (Netherlands)

    Rink, Floor; Ellemers, Naomi

    In two experiments we show how teams can benefit from the presence of multiple sources of deep-level task-related diversity. We manipulated differences (vs. similarities) in task information and personal decision rules in dyads (Study 1) and three-person teams (Study 2). The results indicate that

  13. Coseismic and aseismic deformations associated with mining-induced seismic events located in deep level mines in South Africa

    CSIR Research Space (South Africa)

    Milev, A

    2013-10-01

    Full Text Available Two underground sites in a deep level gold mine in South Africa were instrumented by the Council for Scientific and Industrial Research (CSIR) with tilt meters and seismic monitors. One of the sites was also instrumented by Japanese-German...

  14. Transforming Passive Receptivity of Knowledge into Deep Learning Experiences at the Undergraduate Level: An Example from Music Theory

    Science.gov (United States)

    Ferenc, Anna

    2015-01-01

    This article discusses transformation of passive knowledge receptivity into experiences of deep learning in a lecture-based music theory course at the second-year undergraduate level through implementation of collaborative projects that evoke natural critical learning environments. It presents an example of such a project, addresses key features…

  15. Social stakes of the reversibility in the deep storage of high level radioactive wastes

    International Nuclear Information System (INIS)

    Heriard-Dubreuil, G.; Schieber, C.; Schneider, T.

    1998-06-01

    This document proposes a study of the conditions which surrounded the reversibility introduction in high activity wastes deep storage at an international scale, as well as a reflexion on the social stakes associated there. In France, the law of december 30, 1991 concerning the research on the radioactive wastes prescribes '' the study of possibilities retrieval or non retrieval storage in deep geological deposits''. The analysis of the reversibility associated social stakes emphasizes the necessity to prevent irreversible consequences, to take care to the choices reversibility, to preserve the future generations autonomy. Thus to elaborate a more satisfactory solution between deep disposal and surface storage, a deep storage, capable of gradually evolution, concept is defined. (A.L.B.)

  16. Risk-seeking for losses is associated with 5-HTTLPR, but not with transient changes in 5-HT levels.

    Science.gov (United States)

    Neukam, Philipp T; Kroemer, Nils B; Deza Araujo, Yacila I; Hellrung, Lydia; Pooseh, Shakoor; Rietschel, Marcella; Witt, Stephanie H; Schwarzenbolz, Uwe; Henle, Thomas; Smolka, Michael N

    2018-05-05

    Serotonin (5-HT) plays a key role in different aspects of value-based decision-making. A recent framework proposed that tonic 5-HT (together with dopamine, DA) codes future average reward expectations, providing a baseline against which possible choice outcomes are compared to guide decision-making. To test whether high 5-HT levels decrease loss aversion, risk-seeking for gains, and risk-seeking for losses. In a first session, 611 participants were genotyped for 5-HTTLPR and performed a mixed gambles (MGA) task and two probability discounting tasks for gains and losses, respectively (PDG/PDL). Afterwards, a subsample of 105 participants (44 with S/S, 6 with S/L, 55 with L/L genotype) completed the pharmacological study using a crossover design with tryptophan depletion (ATD), loading (ATL), and balanced (BAL) conditions. The same decision constructs were assessed. We found increased risk-seeking for losses in S/S compared to L/L individuals at the first visit (p = 0.002). Neither tryptophan depletion nor loading affected decision-making, nor did we observe an interaction between intervention and 5-HTTLPR genotype. Our data do not support the idea that transient changes of tonic 5-HT affect value-based decision-making. We provide evidence for an association of 5-HTTLPR with risk-seeking for losses, independent of acute 5-HT levels. This indicates that the association of 5-HTTLPR and risk-seeking for losses is mediated via other mechanisms, possibly by differences in the structural development of neural circuits of the 5-HT system during early life phases.

  17. Electron spectroscopy in the X-ray range for occupied and free levels and the application to transition metal silicides

    International Nuclear Information System (INIS)

    Speier, W.

    1988-03-01

    Intermetallic compounds of transition metals are investigated by means of XPS, Bremsstrahlung Isochromate Spectroscopy and XAS. Occupied and free levels are characterized and moreover a systematic overview over the electronic structure of the transition element silicides is given. (BHO)

  18. Increased levels of dioxin-like substances in adipose tissue in patients with deep infiltrating endometriosis.

    Science.gov (United States)

    Martínez-Zamora, M A; Mattioli, L; Parera, J; Abad, E; Coloma, J L; van Babel, B; Galceran, M T; Balasch, J; Carmona, F

    2015-05-01

    Are the levels of biologically active and the most toxic dioxin-like substances in adipose tissue of patients with deep infiltrating endometriosis (DIE) higher than in a control group without endometriosis? DIE patients have higher levels of dioxins and polychlorinated biphenyls (PCBs) in adipose tissue compared with controls without endometriosis. Some studies have investigated the levels of dioxin-like substances, in serum samples, in patients with endometriosis, with inconsistent results. Case-control study including two groups of patients. The study group (DIE group) consisted of 30 patients undergoing laparoscopic surgery because of DIE. In all patients, an extensive preoperative work-up was performed including clinical exploration, magnetic resonance imaging (MRI) and transvaginal sonography. All patients with DIE underwent a confirmatory histological study for DIE after surgery. The non-endometriosis control group (control group), included the next consecutive patient undergoing laparoscopic surgery in our center due to adnexal benign gynecological disease (ovarian or tubal procedures other than endometriosis) after each DIE patient, and who did not present any type of endometriosis. During the surgical procedure 1-2 g of adipose tissue from the omentum were obtained. Dioxin-like substances were analyzed in adipose tissue in DIE patients and controls without endometriosis. The total toxic equivalence and concentrations of both dioxins and PCBs were significantly higher in patients with DIE in comparison with the control group (P dioxins (2,3,7,8-tetrachlorodibenzo-p-dioxin [2,3,7,8-TCDD] and 1,2,3,7,8-pentachlorodibenzo-p-dioxin [1,2,3,7,8-PeCDD]) (P dioxins and PCBs widely vary in different countries. Furthermore, the strict eligibility criteria used may preclude generalization of the results to other populations and the surgery-based sampling frame may induce a selection bias. Finally, adipose tissue was obtained only from the omentum, and not from other

  19. Systems analysis approach to the disposal of high-level waste in deep ocean sediments

    International Nuclear Information System (INIS)

    Marsily, G. de; Hill, M.D.; Murray, C.N.; Talbert, D.M.; Van Dorp, F.; Webb, G.A.M.

    1980-01-01

    Among the different options being studied for disposal of high-level solidified waste, increasing attention is being paid to that of emplacement of glasses incorporating the radioactivity in deep oceanic sediments. This option has the advantage that the areas of the oceans under investigation appear to be relatively unproductive biologically, are relatively free from cataclysmic events, and are areas in which the natural processes are slow. Thus the environment is stable and predictable so that a number of barriers to the release and dispersion of radioactivity can be defined. Task Groups set up in the framework of the International Seabed Working Group have been studying many aspects of this option since 1976. In order that the various parts of the problem can be assessed within an integrated framework, the methods of systems analysis have been applied. In this paper the Systems Analysis Task Group members report the development of an overall system model. This will be used in an iterative process in which a preliminary analysis, together with a sensitivity analysis, identifies the parameters and data of most importance. The work of the other task groups will then be focussed on these parameters and data requirements so that improved results can be fed back into an improved overall systems model. The major requirements for the development of a preliminary overall systems model are that the problem should be separated into identified elements and that the interfaces between the elements should be clearly defined. The model evolved is deterministic and defines the problem elements needed to estimate doses to man

  20. Numerical investigation of high level nuclear waste disposal in deep anisotropic geologic repositories

    KAUST Repository

    Salama, Amgad

    2015-11-01

    One of the techniques that have been proposed to dispose high level nuclear waste (HLW) has been to bury them in deep geologic formations, which offer relatively enough space to accommodate the large volume of HLW accumulated over the years since the dawn of nuclear era. Albeit the relatively large number of research works that have been conducted to investigate temperature distribution surrounding waste canisters, they all abide to consider the host formations as homogeneous and isotropic. While this could be the case in some subsurface settings, in most cases, this is not true. In other words, subsurface formations are, in most cases, inherently anisotropic and heterogeneous. In this research, we show that even a slight difference in anisotropy of thermal conductivity of host rock with direction could have interesting effects on temperature fields. We investigate the effect of anisotropy angle (the angle the principal direction of anisotropy is making with the coordinate system) on the temperature field as well as on the maximum temperature attained in different barrier systems. This includes 0°, 30°, 45°, 60°, and 90°in addition to the isotropic case as a reference. We also consider the effect of anisotropy ratio (the ratio between the principal direction anisotropies) on the temperature fields and maximum temperature history. This includes ratios ranging between 1.5 and 4. Interesting patterns of temperature fields and profiles are obtained. It is found that the temperature contours are aligned more towards the principal direction of anisotropy. Furthermore the peak temperature in the buffer zone is found to be larger the smaller the anisotropy angle and vice versa. © 2015 Elsevier Ltd. All rights reserved.

  1. Trade Study of System Level Ranked Radiation Protection Concepts for Deep Space Exploration

    Science.gov (United States)

    Cerro, Jeffrey A

    2013-01-01

    A strategic focus area for NASA is to pursue the development of technologies which support exploration in space beyond the current inhabited region of low earth orbit. An unresolved issue for crewed deep space exploration involves limiting crew radiation exposure to below acceptable levels, considering both solar particle events and galactic cosmic ray contributions to dosage. Galactic cosmic ray mitigation is not addressed in this paper, but by addressing credible, easily implemented, and mass efficient solutions for the possibility of solar particle events, additional margin is provided that can be used for cosmic ray dose accumulation. As a result, NASA s Advanced Engineering Systems project office initiated this Radiation Storm Shelter design activity. This paper reports on the first year results of an expected 3 year Storm Shelter study effort which will mature concepts and operational scenarios that protect exploration astronauts from solar particle radiation events. Large trade space definition, candidate concept ranking, and a planned demonstration comprised the majority of FY12 activities. A system key performance parameter is minimization of the required increase in mass needed to provide a safe environment. Total system mass along with operational assessments and other defined protection system metrics provide the guiding metrics to proceed with concept developments. After a downselect to four primary methods, the concepts were analyzed for dosage severity and the amount of shielding mass necessary to bring dosage to acceptable values. Besides analytical assessments, subscale models of several concepts and one full scale concept demonstrator were created. FY12 work terminated with a plan to demonstrate test articles of two selected approaches. The process of arriving at these selections and their current envisioned implementation are presented in this paper.

  2. Increased Levels of NF-kB-Dependent Markers in Cancer-Associated Deep Venous Thrombosis.

    Science.gov (United States)

    Malaponte, Grazia; Signorelli, Salvatore S; Bevelacqua, Valentina; Polesel, Jerry; Taborelli, Martina; Guarneri, Claudio; Fenga, Concettina; Umezawa, Kazou; Libra, Massimo

    2015-01-01

    Several studies highlight the role of inflammatory markers in thrombosis as well as in cancer. However, their combined role in cancer-associated deep vein thrombosis (DVT) and the molecular mechanisms, involved in its pathophysiology, needs further investigations. In the present study, C-reactive protein, interleukin-6 (IL-6), tumor necrosis factor-α (TNF-α), interleukin-1 (IL-1β), matrix metalloproteases-9 (MMP-9), vascular endothelial growth factor (VEGF), tissue factor (TF), fibrinogen and soluble P-selectin, were analyzed in plasma and in monocyte samples from 385 cancer patients, of whom 64 were concomitantly affected by DVT (+). All these markers were higher in cancer patients DVT+ than in those DVT-. Accordingly, significantly higher NF-kB activity was observed in cancer patients DVT+ than DVT-. Significant correlation between data obtained in plasma and monocyte samples was observed. NF-kB inhibition was associated with decreased levels of all molecules in both cancer DVT+ and DVT-. To further demonstrate the involvement of NF-kB activation by the above mentioned molecules, we treated monocyte derived from healthy donors with a pool of sera from cancer patients with and without DVT. These set of experiments further suggest the significant role played by some molecules, regulated by NF-kB, and detected in cancer patients with DVT. Our data support the notion that NF-kB may be considered as a therapeutic target for cancer patients, especially those complicated by DVT. Treatment with NF-kB inhibitors may represent a possible strategy to prevent or reduce the risk of DVT in cancer patients.

  3. The structural integrity of high level waste containers for deep disposal

    International Nuclear Information System (INIS)

    Keer, T.J.; Martindale, N.J.; Haijtink, B.

    1990-01-01

    Most countries with a nuclear power program are developing plans to dispose of high level waste in deep geological repositories. These facilities are typically in the range 500-1000m below ground. Although long term safety analyses mainly rely on the isolation function of the geological barrier, for the medium term (between 500 and 1000 years) a barrier such as a container (overpack) may play an important role. This paper addresses the mechanical/structural behavior of these structures under extreme geological pressures. The work described in the paper was conducted within the COMPAS project (Container Mechanical Performance Assessment) funded by the Commission of the European Communities and the United Kingdom Department of the Environment. The work was aimed at predicting the modes of failure and failure pressures which characterize the heavy, thick walled mild steel containers which might be considered for the disposal of vitrified waste. The work involved a considerable amount of analytical work, using 3-D non-linear finite element techniques, coupled with a large parallel program of experimental work. The experimental work consisted of a number of scale model tests in which the response of the containers was examined under external pressures as high as 120MPa. Extensive strain-gauge instrumentation was used to record the behavior of the models as they were driven to collapse. A number of comparative computer calculations were carried out by organizations from various European countries. Correlations were established between experimental and analytical data and guidelines regarding the choice of suitable software were established. The work concluded with a full 3-D simulation of the behavior of a container under long-term disposal conditions. In this analysis, non-linearities due to geological effects and material/geometry effects in the container were properly accounted for. 6 refs., 9 figs., 4 tabs

  4. Synthesizing and Characterizing Graphene via Raman Spectroscopy: An Upper-Level Undergraduate Experiment That Exposes Students to Raman Spectroscopy and a 2D Nanomaterial

    Science.gov (United States)

    Parobek, David; Shenoy, Ganesh; Zhou, Feng; Peng, Zhenbo; Ward, Michelle; Liu, Haitao

    2016-01-01

    In this upper-level undergraduate experiment, students utilize micro-Raman spectroscopy to characterize graphene prepared by mechanical exfoliation and chemical vapor deposition (CVD). The mechanically exfoliated samples are prepared by the students while CVD graphene can be purchased or obtained through outside sources. Owing to the intense Raman…

  5. Gamma-ray spectroscopy in the decay of (83)Se to levels of (83)Br.

    Science.gov (United States)

    Krane, K S

    2015-03-01

    High-resolution γ ray spectroscopy experiments have been done to study the emissions from the radioactive decay of 22-min (83g)Se produced from neutron capture using samples of enriched (82)Se. Energy and intensity values have been obtained to roughly an order of magnitude greater precision than in previous studies. Based on energy sums, 2 new levels are proposed in the daughter (83)Br and one previously proposed level is shown to be doubtful. Some 25 new transitions appear to decay with the (83)Se halflife, about half of which can be accommodated among the previous or newly proposed levels. Several previous γ ray placements are shown to be inconsistent with the new determinations of the (83)Br energy levels, but cannot be accommodated anywhere else among the known levels. As a result of the missing γ ray placements, some of the β branchings in the decay to levels of (83)Br appear to be negative. Gamma rays from the 2.4-h decay of the daughter (83)Br to levels of (83)Kr have also been observed, along with decays of (81g)(,m)Se present as a small impurity in the enriched samples and also as a strong component in irradiated samples of natural Se. Copyright © 2014 Elsevier Ltd. All rights reserved.

  6. The relationship between the deep-level structure in crust and brewing of strong earthquakes in Xingtai area

    Science.gov (United States)

    Xiao, Lan-Xi; Zhu, Yuan-Qing; Zhang, Shao-Quan; Liu, Xu; Guo, Yu

    1999-11-01

    In this paper, crust medium is treated as Maxwell medium, and crust model includes hard inclusion, soft inclusion, deep-level fault. The stress concentration and its evolution with time are obtained by using three-dimensional finite element method and differential method. The conclusions are draw as follows: (1) The average stress concentration and maximum shear stress concentration caused by non-heterogeneous of crust are very high in hard inclusion and around the deep fault. With the time passing by, the concentration of average stress in the model gradually trends to uniform. At the same time, the concentration of maximum shear stress in hard inclusion increases gradually. This character is favorable to transfer shear strain energy from soft inclusion to hard inclusion. (2) When the upper mantle beneath the inclusion upheave at a certain velocity of 1 cm/a, the changes of average stress concentration with time become complex, and the boundary of the hard and soft inclusion become unconspicuous, but the maximum shear stress concentration increases much more in the hard inclusion with time at a higher velocity. This feature make for transformation of energy from the soft inclusion to the hard inclusion. (3) The changes of average stress concentration and maximum shear stress concentration with time around the deep-level fault result in further accumulation of maximum shear stress concentration and finally cause the deep-level fault instable and accelerated creep along fault direction. (4) The changes of vertical displacement on the surface of the model, which is caused by the accelerated creep of the deep-level fault, is similar to that of the observation data before Xingtai strong earthquake.

  7. Photoemission spectroscopy study on interfacial energy level alignments in tandem organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Ou, Qing-Dong; Li, Chi; Li, Yan-Qing, E-mail: yqli@suda.edu.cn; Tang, Jian-Xin, E-mail: jxtang@suda.edu.cn

    2015-10-01

    Highlights: • The interface energetics of tandem OLEDs is overviewed. • Energy level alignment in CGLs is addressed via photoemission spectroscopy. • The n-type doping effect with cesium compounds is discussed. • Hole injection barrier is dependent on oxygen vacancies in transition metal oxides. • Device lifetime of tandem OLEDs is sensitive to interfacial stability of CGLs. - Abstract: Organic light-emitting diodes (OLEDs) using a tandem structure offer a highly attractive option for the applications of next-generation flat panel displays and solid-state lighting due to the extremely high brightness and efficiency along with the long operational lifetime. In general, reliable information about interface energetics of the charge generation layers (CGLs), which plays the central role in charge generation and carrier injection into the stacked emission units, is highly desirable and advantageous for interface engineering and the performance optimization of tandem OLEDs. In this review, our recent studies on tandem OLEDs are overviewed, especially from interface energetics perspective via photoemission spectroscopy. The electronic structures of various transition metal oxide (TMO)-based CGLs and their role in charge generation process are reviewed, addressing the n-type doping impact of organic layers in CGLs, thermal annealing-induced oxygen vacancy in TMOs, and the interfacial stability of CGLs on the device operational lifetime. The resulting energy level alignments are summarized in correspondence with tandem OLED performance.

  8. Quanty for core level spectroscopy - excitons, resonances and band excitations in time and frequency domain

    International Nuclear Information System (INIS)

    Haverkort, Maurits W.

    2016-01-01

    Depending on the material and edge under consideration, core level spectra manifest themselves as local excitons with multiplets, edge singularities, resonances, or the local projected density of states. Both extremes, i.e., local excitons and non-interacting delocalized excitations are theoretically well under control. Describing the intermediate regime, where local many body interactions and band-formation are equally important is a challenge. Here we discuss how Quanty , a versatile quantum many body script language, can be used to calculate a variety of different core level spectroscopy types on solids and molecules, both in the frequency as well as the time domain. The flexible nature of Quanty allows one to choose different approximations for different edges and materials. For example, using a newly developed method merging ideas from density renormalization group and quantum chemistry [1-3], Quanty can calculate excitons, resonances and band-excitations in x-ray absorption, photoemission, x-ray emission, fluorescence yield, non-resonant inelastic x-ray scattering, resonant inelastic x-ray scattering and many more spectroscopy types. Quanty can be obtained from: http://www.quanty.org. (paper)

  9. Spectroscopy and energy level location of the trivalent lanthanides in LiYP4O12

    International Nuclear Information System (INIS)

    Dorenbos, P.; Shalapska, T.; Stryganyuk, G.; Gektin, A.; Voloshinovskii, A.

    2011-01-01

    The excitation and emission properties of the lanthanides Ce 3+ , Pr 3+ , Nd 3+ , Sm 3+ , Eu 3+ , Tb 3+ , Er 3+ , Tm 3+ , and Yb 3+ in LiYP 4 O 12 were studied by vacuum ultra-violet spectroscopy at 10 K. It provides information on the energies of 4f-5d excitation and emission bands. In the case of Er 3+ spin forbidden emission was observed. Charge transfer excitation bands were identified for Eu 3+ , Sm 3+ , Tm 3+ , and Yb 3+ , and in the case of Yb 3+ charge transfer luminescence is observed. All data appear to be consistent with each other and have been used to construct a level scheme showing the location of the energy levels of all trivalent and divalent lanthanides in LiYP 4 O 12 . - Research Highlights: → The spectroscopy of most of the trivalent lanthanides in LiYP 4 O 12 is presented for the first time. → Charge transfer luminescence of Yb3+ is reported. → We demonstrate that the energy of the first 4f-5d transition and the charge transfer band agree with predictive models. → For the first time a scheme with the location of all lanthanide states (divalent and trivalent ) w.r.t. de-valence and conduction band of LIP 4 O 12 is presented.

  10. Core level photoemission spectroscopy and chemical bonding in Sr2Ta2O7

    DEFF Research Database (Denmark)

    Atuchin, V. V.; Grivel, Jean-Claude; Zhang, Z. M.

    2009-01-01

    Electronic parameters of constituent element core levels of strontium pyrotantalate (Sr2Ta2O7) were measured with X-ray photoelectron spectroscopy (XPS). The Sr2Ta2O7 powder sample was synthesized using standard solid state method. The valence electron transfer on the formation of the Sr-O and Ta......-O bonds was characterized by the binding energy differences between the O 1s and cation core levels, Delta(O-Sr) = BE(O 1s) - BE(Sr 3d(5/2)) and Delta(O-Ta) = BE(O 1s) - BE(Ta 4f(7/2)). The chemical bonding effects were considered on the basis of our XPS results for Sr2Ta2O7 and earlier published...

  11. Molecular analyses reveal high levels of eukaryotic richness associated with enigmatic deep-sea protists (Komokiacea)

    DEFF Research Database (Denmark)

    Lecroq, Beatrice; Gooday, Andrew John; Cedhagen, Tomas

    2009-01-01

    Komokiaceans are testate agglutinated protists, extremely diverse and abundant in the deep sea. About 40 species are described and share the same main morpholog- ical feature: a test consisting of narrow branching tubules forming a complex system. In some species, the interstices between the tubu......Komokiaceans are testate agglutinated protists, extremely diverse and abundant in the deep sea. About 40 species are described and share the same main morpholog- ical feature: a test consisting of narrow branching tubules forming a complex system. In some species, the interstices between...... suggest strongly that komokiaceans, and probably many other large testate protists, provide a habitat structure for a large spectrum of eukaryotes, significantly contributing to maintaining the biodiversity of micro- and meiofaunal communities in the deep sea....

  12. Direct characterization of the energy level alignments and molecular components in an organic hetero-junction by integrated photoemission spectroscopy and reflection electron energy loss spectroscopy analysis.

    Science.gov (United States)

    Yun, Dong-Jin; Shin, Weon-Ho; Bulliard, Xavier; Park, Jong Hwan; Kim, Seyun; Chung, Jae Gwan; Kim, Yongsu; Heo, Sung; Kim, Seong Heon

    2016-08-26

    A novel, direct method for the characterization of the energy level alignments at bulk-heterojunction (BHJ)/electrode interfaces on the basis of electronic spectroscopy measurements is proposed. The home-made in situ photoemission system is used to perform x-ray/ultraviolet photoemission spectroscopy (XPS/UPS), reflection electron energy loss spectroscopy (REELS) and inverse photoemission spectroscopy of organic-semiconductors (OSCs) deposited onto a Au substrate. Through this analysis system, we are able to obtain the electronic structures of a boron subphthalocyanine chloride:fullerene (SubPC:C60) BHJ and those of the separate OSC/electrode structures (SubPC/Au and C60/Au). Morphology and chemical composition analyses confirm that the original SubPC and C60 electronic structures remain unchanged in the electrodes prepared. Using this technique, we ascertain that the position and area of the nearest peak to the Fermi energy (EF = 0 eV) in the UPS (REELS) spectra of SubPC:C60 BHJ provide information on the highest occupied molecular orbital level (optical band gap) and combination ratio of the materials, respectively. Thus, extracting the adjusted spectrum from the corresponding SubPC:C60 BHJ UPS (REELS) spectrum reveals its electronic structure, equivalent to that of the C60 materials. This novel analytical approach allows complete energy-level determination for each combination ratio by separating its electronic structure information from the BHJ spectrum.

  13. Detecting Fermi-level shifts by Auger electron spectroscopy in Si and GaAs

    Science.gov (United States)

    Debehets, J.; Homm, P.; Menghini, M.; Chambers, S. A.; Marchiori, C.; Heyns, M.; Locquet, J. P.; Seo, J. W.

    2018-05-01

    In this paper, changes in surface Fermi-level of Si and GaAs, caused by doping and cleaning, are investigated by Auger electron spectroscopy. Based on the Auger voltage contrast, we compared the Auger transition peak energy but with higher accuracy by using a more accurate analyzer and an improved peak position determination method. For silicon, a peak shift as large as 0.46 eV was detected when comparing a cleaned p-type and n-type wafer, which corresponds rather well with the theoretical difference in Fermi-levels. If no cleaning was applied, the peak position did not differ significantly for both wafer types, indicating Fermi-level pinning in the band gap. For GaAs, peak shifts were detected after cleaning with HF and (NH4)2S-solutions in an inert atmosphere (N2-gas). Although the (NH4)2S-cleaning in N2 is very efficient in removing the oxygen from the surface, the observed Ga- and As-peak shifts are smaller than those obtained after the HF-cleaning. It is shown that the magnitude of the shift is related to the surface composition. After Si-deposition on the (NH4)2S-cleaned surface, the Fermi-level shifts back to a similar position as observed for an as-received wafer, indicating that this combination is not successful in unpinning the Fermi-level of GaAs.

  14. Economical Appraisal of Total Aflatoxin Level in the Poultry Feeds by Fourier Transform Infrared Spectroscopy

    International Nuclear Information System (INIS)

    Sherazai, S.T.H.; Shar, Z.; Iqbal, M.; Sumbal, G.A.

    2013-01-01

    Single-bounce attenuated total reflectance (SB-ATR) Fourier transform infrared (FTIR) spectroscopy has been used for the quantitative determination of total aflatoxins in the broiler poultry feed. An FTIR calibration spanning the range 1-70 micro g/L aflatoxin standards in (70:30, v/v) methanol-water solvent system based on partial least square (PLS) model, developed by relating mid IR region between 3755-950 cm/ sub -1/. The excellent coefficient of various (using 0.998) was achieved with 1.49 relative mean square error of calibration (RMSEC). Aflatoxins from each of eight poultry feeds was extracted and the determined by the widely used commercially available Enzyme-linked Immunosorbent Assay (ELISA) procedure and the SB-ATR/FTIR method. The SB-ATR/FTIR aflatoxins predictions were related to those determined by the ELISA method by linear regression, producing an R value of 0.989 and a SD of +- 2.80 micro g/L. The result of the study clearly indicated that FT-IR spectroscopy due to its rapidity and simplicity along with data manipulation by advance computer software could be effectively used for routine determination of aflatoxins present in the poultry feeds at very low level. (author)

  15. Photoelectron and electron momentum spectroscopy of 1-butene at benchmark theoretical levels

    International Nuclear Information System (INIS)

    Shojaei, S H Reza; Morini, Filippo; Hajgató, Bálazs; Deleuze, Michael S

    2011-01-01

    The results of experimental studies of the valence electronic structure of 1-butene employing photoelectron spectroscopy as well as electron momentum spectroscopy are interpreted on the ground of quantitative calculations of one-electron and shake-up ionization energies and of the related Dyson orbitals, using one-particle Green's function theory in conjunction with the third-order algebraic diagrammatic construction scheme (ADC(3)). Comparison is made with simulations of (e, 2e) electron momentum distributions obtained from standard (B3LYP) Kohn-Sham orbitals. Our analysis is based on highly quantitative determinations of the energy difference between the cis and gauche (C 1 ) conformers, within ∼0.02 kcal mol -1 accuracy, and a thermostatistical evaluation thereby of conformer weights beyond the level of the rigid rotor harmonic oscillator approximation. Relative entropies are found to be particularly sensitive to hindered rotations. The shake-up onset is located at 15.9 eV, and the orbital picture of ionization breaks down completely at electron binding energies above 19 eV. If the available experimental momentum profiles demonstrate the dominance of the C 1 conformer, they are in this case clearly not sensitive enough to the molecular conformation for evaluating conformer abundances with accuracies better than 10% due to the limited energy and momentum resolutions and likely physical complications.

  16. Decreased plasma levels of activated factor VII in patients with deep vein thrombosis

    NARCIS (Netherlands)

    Schut, A. M.; Meijers, J. C. M.; Lisman-van Leeuwen, Y.; van Montfoort, M. L.; Roest, M.; de Groot, P. G.; Urbanus, R. T.; Coppens, M.; Lisman, T.

    BackgroundThe initiating trigger in the development of deep vein thrombosis (DVT) remains unidentified. It has been suggested that tissue factor (TF)-bearing microparticles play a key role, which indicates a role for the TF pathway in the initiation of DVT. ObjectiveTo assess the role of the TF

  17. Decreased plasma levels of activated factor VII in patients with deep vein thrombosis

    NARCIS (Netherlands)

    Schut, A. M.; Meijers, J. C M; Lisman- van Leeuwen, Y.; van Montfoort, M. L.; Roest, M.; de Groot, P. G.; Urbanus, R. T.; Coppens, M.; Lisman, T.

    2015-01-01

    Background: The initiating trigger in the development of deep vein thrombosis (DVT) remains unidentified. It has been suggested that tissue factor (TF)-bearing microparticles play a key role, which indicates a role for the TF pathway in the initiation of DVT. Objective: To assess the role of the TF

  18. Decreased plasma levels of activated factor VII in patients with deep vein thrombosis

    NARCIS (Netherlands)

    Schut, A. M.; Meijers, J. C. M.; Lisman-van Leeuwen, Y.; van Montfoort, M. L.; Roest, M.; de Groot, P. G.; Urbanus, R. T.; Coppens, M.; Lisman, T.

    2015-01-01

    The initiating trigger in the development of deep vein thrombosis (DVT) remains unidentified. It has been suggested that tissue factor (TF)-bearing microparticles play a key role, which indicates a role for the TF pathway in the initiation of DVT. To assess the role of the TF pathway in the

  19. The behaviour of cemented backfill and the surrounding rockmass at western deep levels south mine

    CSIR Research Space (South Africa)

    York, G

    1992-11-01

    Full Text Available Cemented backfill is used at Western Deep Mine as local and regional support areas of high stopping width. The in situ performance is reported and compared to laboratory tests. A back analysis was carried out to obtain a more accurate value...

  20. SeaWiFS Deep Blue Aerosol Optical Thickness Monthly Level 3 Climatology Data Gridded at 0.5 Degrees V004

    Data.gov (United States)

    National Aeronautics and Space Administration — The SeaWiFS Deep Blue Level 3 Monthly Climatology Product contains monthly global climatology gridded (0.5 x 0.5 deg) data derived from SeaWiFS Deep Blue Level 3...

  1. Cerebral Magnesium Levels in Preeclampsia; A Phosphorus Magnetic Resonance Spectroscopy Study.

    Science.gov (United States)

    Nelander, Maria; Weis, Jan; Bergman, Lina; Larsson, Anders; Wikström, Anna-Karin; Wikström, Johan

    2017-07-01

    Magnesium sulfate (MgSO4) is used as a prophylaxis for eclamptic seizures. The exact mechanism of action is not fully established. We used phosphorus magnetic resonance spectroscopy (31P-MRS) to investigate if cerebral magnesium (Mg2+) levels differ between women with preeclampsia, normal pregnant, and nonpregnant women. This cross-sectional study comprised 28 women with preeclampsia, 30 women with normal pregnancies in corresponding gestational week (range: 23-41 weeks) and 11 nonpregnant healthy controls. All women underwent 31P-MRS from the parieto-occipital region of the brain and were interviewed about cerebral symptoms. Differences between groups were assessed by analysis of variance and Tukey's post-hoc test. Correlations between Mg2+ levels and specific neurological symptoms were estimated with Spearman's rank test. Mean maternal cerebral Mg2+ levels were lower in women with preeclampsia (0.12 mM ± 0.02) compared to normal pregnant controls (0.14 mM ± 0.03) (P = 0.04). Nonpregnant and normal pregnant women did not differ in Mg2+ levels. Among women with preeclampsia, lower Mg2+ levels correlated with presence of visual disturbances (P = 0.04). Plasma levels of Mg2+ did not differ between preeclampsia and normal pregnancy. Women with preeclampsia have reduced cerebral Mg2+ levels, which could explain the potent antiseizure prophylactic properties of MgSO4. Within the preeclampsia group, women with visual disturbances have lower levels of Mg2+ than those without such symptoms. © American Journal of Hypertension, Ltd 2017. All rights reserved. For Permissions, please email: journals.permissions@oup.com

  2. Deep and shallow acceptor levels in solid solutions Pb0.98Sm0.02S

    International Nuclear Information System (INIS)

    Hasanov, H.A.; Rahimov, R.Sh.

    2010-01-01

    It is well known that the metal vacancies the energy levels of which take place between permitted energies of valency band, are the main acceptor centers in the led salts and solid solutions on their base. The aim of the given paper is founding of character of acceptor levels in single crystals Pb 0 .98Sm 0 .02S with low concentrations of charge carrier. The deep and shallow acceptor levels are found at investigation of Hall effect in Pb 0 .98Sm 0 .02S solid solution with character of low concentrations of charge carriers in crystals

  3. Deep absorption band in Cu(In,Ga)Se{sub 2} thin films and solar cells observed by transparent piezoelectric photothermal spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Shirakata, Sho; Atarashi, Akiko [Faculty of Engineering, Ehime University, Matsuyama 790-8577 (Japan); Yagi, Masakazu [Kagawa National College of Technology, Mitoyo-shi 769-1192 (Japan)

    2015-06-15

    The photo-acoustic spectroscopy (PAS) using a transparent piezoelectric photo-thermal (Tr-PPT) method was carried out on Cu(In,Ga)Se{sub 2} (CIGS) thin films (both CIGS/Mo/SLG and CdS/CIGS/Mo/SLG) and solar cells (ZnO/CdS/CIGS/Mo/SLG). Using the Tr-PPT method, the high background absorption in the below gap region observed in both a microphone and a conventional transducer PAS spectra was strongly reduced. This high background absorption came from the CIGS/Mo interface. This result proves that the Tr-PPT PAS is the surface sensitive method. In the below-band region, a bell-shape deep absorption band has been observed at 0.76 eV, in which a full-width at the half-maximum value was 70-120 meV. This deep absorption band was observed for both CdS/CIGS/Mo/SLG and ZnO/CdS/CIGS/Mo/SLG structures. The peak energy of the absorption band was independent of the alloy composition for 0.25≤Ga/III≤0.58. Intensity of the PA signal was negatively correlated to the Na concentration at the CIGS film surface. The origin of the 0.76 eV peak is discussed with relation to native defects such as a Cu-vacancy-related defect (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Summary report of a seminar on geosphere modelling requirements of deep disposal of low and intermediate level radioactive wastes

    International Nuclear Information System (INIS)

    Piper, D.; Paige, R.W.; Broyd, T.W.

    1989-02-01

    A seminar on the geosphere modelling requirements of deep disposal of low and intermediate level radioactive wastes was organised by WS Atkins Engineering Sciences as part of Her Majesty's Inspectorate of Pollution's Radioactive Waste Assessment Programme. The objectives of the seminar were to review geosphere modelling capabilities and prioritise, if possible, any requirements for model development. Summaries of the presentations and subsequent discussions are given in this report. (author)

  5. Assessing the Level of Disability, Deep Cervical Flexor Endurance and Fear Avoidance Beliefs in Bankers with Neck Pain

    Directory of Open Access Journals (Sweden)

    Deptee Warikoo

    2013-08-01

    Full Text Available Objective: To assess the level of disability, the deep cervical flexor endurance and fear avoidance beliefs (FAB in bankers with neck pain and to find a correlation between disability and deep cervical muscle endurance, FAB and disability, FAB and deep flexor muscle endurance. Methods: It ws an observational study. The Subjects who had neck pain and minimum 5 years’ experience as a Banker participated in the study. Total 100 subjects were selected. All the subjects were assessed for their disability by the neck pain and disability score (NPDI, their deep cervical flexor endurance using Pressure Biofeedback using Cranio-Cervical flexion test (CCFT and Fear Avoidance Belief by using questionnaire( FABQ. Results: It was found that bankers have a moderate level of disability. The results showed an elevated fear avoidance belief with a mean value of FABQ-PA 21.61±4.42 and FABQ-W 37.81± 5.69. The results indicated that a negative correlation was found between NPDI and CCFT (r=0.855. A positive correlation was found between NPDI and FABQ-PA(r=0.337, FABQ-W(r=0.500. In the present study a negative correlation was found between CCFT and FABQ-W(r=0.553, FABQ-PA (0.348 and positive correlation (r=0.540 was found between FABQ-PA and FABQ-W. Conclusion: The present study concluded that there was a significant level of disability and significantly decreased endurance level and increased fear avoidance beliefs (both work and physical activity related among bankers with neck pain. In addition to that there was a significant correlation found between NPDI and CCFT, NPDI and FABQ, CCFT and FABQ, FABQ-W and FABQ-PA.

  6. Estimation of Soil Nitrate (NO3) Level Using Laser-Induced Breakdown Spectroscopy (LIBS)

    Science.gov (United States)

    Angkat, A. R.; Seminar, K. B.; Rahmat, M.; Sutandi, A.

    2018-05-01

    Laser-Induced Breakdown Spectroscopy (LIBS) is a method for measuring level of nitrogen (N) in the soil in the form of N-nitrate (NO3) rapidly without going through the process of sieving and drying. The sample soil in the form of pellets subjected to laser pulses using a wavelength of 532 nm, pulse duration 5.5 ns, repetition rate of 10 Hz, and Q-switch delay of 150 μs. Emissions are captured by the spectrometer with the wavelength range of 190-1130 nm. Spectrum characterization was processed through the second derivative in order to obtain a wavelength identity that could be rapidly used to estimate the nitrate content of the soil with a determination coefficient of (R2) 0.9254 and a coefficient of variation (CV) of 8.41%. The results of this study are very potential to be applied for rapid measurement of soil nitrate.

  7. Alkyl-terminated Si(111) surfaces: A high-resolution, core level photoelectron spectroscopy study

    Energy Technology Data Exchange (ETDEWEB)

    Terry, J.; Linford, M.R.; Wigren, C.; Cao, R.; Pianetta, P.; Chidsey, C.E. [Stanford University, Stanford, California 94309 (United States)

    1999-01-01

    The bonding of alkyl monolayers to Si(111) surfaces has been studied with high-resolution core level photoelectron spectroscopy (PES). Two very different wet-chemical methods have been used to prepare the alkyl monolayers: (i) Olefin insertion into the H{endash}Si bond of the H{endash}Si(111) surface, and (ii) replacement of Cl on the Cl{endash}Si(111) surface by an alkyl group from an alkyllithium reagent. In both cases, PES has revealed a C 1s component shifted to lower binding energy and a Si 2p component shifted to higher binding energy. Both components are attributed to the presence of a C{endash}Si bond at the interface. Along with photoelectron diffraction data [Appl. Phys. Lett. {bold 71}, 1056, (1997)], these data are used to show that these two synthetic methods can be used to functionalize the Si(111) surface. {copyright} {ital 1999 American Institute of Physics.}

  8. Wavelengths and energy levels of Xe V and Xe VI obtained by collision-based spectroscopy

    International Nuclear Information System (INIS)

    Larsson, M.O.; Gonzalez, A.M.; Hallin, R.; Heijkenskjoeld, F.; Nystroem, B.; O'Sullivan, G.; Weber, C.; Waennstroem, A.

    1996-01-01

    We have utilized collision-based spectroscopy to investigate the spectra of Xe V and Xe VI. The radiation emitted following electron capture by 50 keV Xe 5+ and 60 keV Xe 6+ ions impinging on a He (Ar) gas target has been recorded in the 350-6000 (1200-2500) A wavelength region. A number of new energy levels of Xe V and Xe VI have been established from lines identified by us. In particular, we have observed and identified transitions from the 5s 2 5p4f (5s 2 4f) configuration of Xe V (Xe VI). The analysis was supported by Hartree-Fock calculations. (orig.)

  9. Surface Transient Binding-Based Fluorescence Correlation Spectroscopy (STB-FCS), a Simple and Easy-to-Implement Method to Extend the Upper Limit of the Time Window to Seconds.

    Science.gov (United States)

    Peng, Sijia; Wang, Wenjuan; Chen, Chunlai

    2018-05-10

    Fluorescence correlation spectroscopy is a powerful single-molecule tool that is able to capture kinetic processes occurring at the nanosecond time scale. However, the upper limit of its time window is restricted by the dwell time of the molecule of interest in the confocal detection volume, which is usually around submilliseconds for a freely diffusing biomolecule. Here, we present a simple and easy-to-implement method, named surface transient binding-based fluorescence correlation spectroscopy (STB-FCS), which extends the upper limit of the time window to seconds. We further demonstrated that STB-FCS enables capture of both intramolecular and intermolecular kinetic processes whose time scales cross several orders of magnitude.

  10. High resolution optical spectroscopy in isotopically-pure Si using radioactive isotopes: towards a re-evaluation of deep centres

    CERN Multimedia

    2008-01-01

    Deep centres in silicon have been studied in great detail over the last 50 years and much progress has been made in the understanding and control of impurities in this material. Much of this effort has been focussed on the problems of metallic impurities such as Fe, Ag, Cu and Au. These are impurities that diffuse quickly into the crystal and hamper device performance. Although the understanding of these impurity centres in Si is widely thought to be "solved" recent experiments with isotopically-pure Si are disproving long-held results and are opening up new perspectives on the constitutent nature of deep centres in Si. In particular, there is new evidence to show that the family of Cu, Ag and Au may all show essentially the same behaviour by forming a cluster of $\\textbf{any four atoms}$ of these elements. This has been established for Cu and Ag through the use of different stable isotopes in the preparation of samples, but the case of Au remains unproven since there is only one stable Au isotope. In this pr...

  11. A transient absorption study of allophycocyanin

    Indian Academy of Sciences (India)

    Transient dynamics of allophycocyanin trimers and monomers are observed by using the pump-probe, transient absorption technique. The origin of spectral components of the transient absorption spectra is discussed in terms of both kinetics and spectroscopy. We find that the energy gap between the ground and excited ...

  12. Vitrification treatment options for disposal of greater-than-Class-C low-level waste in a deep geologic repository

    International Nuclear Information System (INIS)

    Fullmer, K.S.; Fish, L.W.; Fischer, D.K.

    1994-11-01

    The Department of Energy (DOE), in keeping with their responsibility under Public Law 99-240, the Low-Level Radioactive Waste Policy Amendments Act of 1985, is investigating several disposal options for greater-than-Class C low-level waste (GTCC LLW), including emplacement in a deep geologic repository. At the present time vitrification, namely borosilicate glass, is the standard waste form assumed for high-level waste accepted into the Civilian Radioactive Waste Management System. This report supports DOE's investigation of the deep geologic disposal option by comparing the vitrification treatments that are able to convert those GTCC LLWs that are inherently migratory into stable waste forms acceptable for disposal in a deep geologic repository. Eight vitrification treatments that utilize glass, glass ceramic, or basalt waste form matrices are identified. Six of these are discussed in detail, stating the advantages and limitations of each relative to their ability to immobilize GTCC LLW. The report concludes that the waste form most likely to provide the best composite of performance characteristics for GTCC process waste is Iron Enriched Basalt 4 (IEB4)

  13. Considerations affecting deep-well disposal of tritium-bearing low-level aqueous waste from nuclear fuel reprocessing plants

    International Nuclear Information System (INIS)

    Trevorrow, L.E.; Warner, D.L.; Steindler, M.J.

    1977-03-01

    Present concepts of disposal of low-level aqueous wastes (LLAW) that contain much of the fission-product tritium from light water reactors involve dispersal to the atmosphere or to surface streams at fuel reprocessing plants. These concepts have been challenged in recent years. Deep-well injection of low-level aqueous wastes, an alternative to biospheric dispersal, is the subject of this presentation. Many factors must be considered in assessing its feasibility, including technology, costs, environmental impact, legal and regulatory constraints, and siting. Examination of these factors indicates that the technology of deep-well injection, extensively developed for other industrial wastes, would require little innovation before application to low-level aqueous wastes. Costs would be low, of the order of magnitude of 10 -4 mill/kWh. The environmental impact of normal deep-well disposal would be small, compared with dispersal to the atmosphere or to surface streams; abnormal operation would not be expected to produce catastrophic results. Geologically suitable sites are abundant in the U.S., but a well would best be co-located with the fuel-reprocessing plant where the LLAW is produced. Legal and regulatory constraints now being developed will be the most important determinants of the feasibility of applying the method

  14. Genetic engineering combined with deep UV resonance Raman spectroscopy for structural characterization of amyloid-like fibrils.

    Science.gov (United States)

    Sikirzhytski, Vitali; Topilina, Natalya I; Higashiya, Seiichiro; Welch, John T; Lednev, Igor K

    2008-05-07

    Elucidating the structure of the cross-beta core in large amyloid fibrils is a challenging problem in modern structural biology. For the first time, a set of de novo polypeptides was genetically engineered to form amyloid-like fibrils with similar morphology and yet different strand length. Differential ultraviolet Raman spectroscopy allowed for separation of the spectroscopic signatures of the highly ordered beta-sheet strands and turns of the fibril core. The relationship between Raman frequencies and Ramachandran dihedral angles of the polypeptide backbone indicates the nature of the beta-sheet and turn structural elements.

  15. Dual deep modeling: multi-level modeling with dual potencies and its formalization in F-Logic.

    Science.gov (United States)

    Neumayr, Bernd; Schuetz, Christoph G; Jeusfeld, Manfred A; Schrefl, Michael

    2018-01-01

    An enterprise database contains a global, integrated, and consistent representation of a company's data. Multi-level modeling facilitates the definition and maintenance of such an integrated conceptual data model in a dynamic environment of changing data requirements of diverse applications. Multi-level models transcend the traditional separation of class and object with clabjects as the central modeling primitive, which allows for a more flexible and natural representation of many real-world use cases. In deep instantiation, the number of instantiation levels of a clabject or property is indicated by a single potency. Dual deep modeling (DDM) differentiates between source potency and target potency of a property or association and supports the flexible instantiation and refinement of the property by statements connecting clabjects at different modeling levels. DDM comes with multiple generalization of clabjects, subsetting/specialization of properties, and multi-level cardinality constraints. Examples are presented using a UML-style notation for DDM together with UML class and object diagrams for the representation of two-level user views derived from the multi-level model. Syntax and semantics of DDM are formalized and implemented in F-Logic, supporting the modeler with integrity checks and rich query facilities.

  16. Autobalanced Ramsey Spectroscopy

    Science.gov (United States)

    Sanner, Christian; Huntemann, Nils; Lange, Richard; Tamm, Christian; Peik, Ekkehard

    2018-01-01

    We devise a perturbation-immune version of Ramsey's method of separated oscillatory fields. Spectroscopy of an atomic clock transition without compromising the clock's accuracy is accomplished by actively balancing the spectroscopic responses from phase-congruent Ramsey probe cycles of unequal durations. Our simple and universal approach eliminates a wide variety of interrogation-induced line shifts often encountered in high precision spectroscopy, among them, in particular, light shifts, phase chirps, and transient Zeeman shifts. We experimentally demonstrate autobalanced Ramsey spectroscopy on the light shift prone Yb+ 171 electric octupole optical clock transition and show that interrogation defects are not turned into clock errors. This opens up frequency accuracy perspectives below the 10-18 level for the Yb+ system and for other types of optical clocks.

  17. Testing the deep-crustal heating model using quiescent neutron-star very-faint X-ray transients and the possibility of partially accreted crusts in accreting neutron stars

    Science.gov (United States)

    Wijnands, R.; Degenaar, N.; Page, D.

    2013-07-01

    It is assumed that accreting neutron stars in low-mass X-ray binaries are heated due to the compression of the existing crust by the freshly accreted matter which gives rise to a variety of nuclear reactions in the crust. It has been shown that most of the energy is released deep in the crust by pycnonuclear reactions involving low-Z elements (the deep-crustal heating scenario). In this paper we discuss if neutron stars in the so-called very-faint X-ray transients (VFXTs; those transients have outburst peak 2-10 keV X-ray luminosities short-term (less than a few tens of thousands of years) and the one throughout their lifetime. The latter is particularly important because it can be so low that the neutron stars might not have accreted enough matter to become massive enough that enhanced core cooling processes become active. Therefore, they could be relatively warm compared to other systems for which such enhanced cooling processes have been inferred. However, the amount of matter can also not be too low because then the crust might not have been replaced significantly by accreted matter and thus a hybrid crust of partly accreted and partly original, albeit further compressed matter, might be present. This would inhibit the full range of pycnonuclear reactions to occur and therefore possibly decrease the amount of heat deposited in the crust. More detailed calculations of the heating and cooling properties of such hybrid crusts have to be performed to be conclusive. Furthermore, better understanding is needed about how a hybrid crust affects other properties such as the thermal conductivity. A potentially interesting way to observe the effects of a hybrid crust on the heating and cooling of an accreting neutron star is to observe the crust cooling of such a neutron star after a prolonged (years to decades) accretion episode and compare the results with similar studies performed for neutron stars with a fully accreted crust. We also show that some individual neutron

  18. Deep levels due to hydrogen in ZnO single crystals

    Science.gov (United States)

    Parmar, Narendra; Weber, Marc; Lynn, Kelvin

    2009-05-01

    Hydrogen impurities and oxygen vacancies are involved in the ˜0.7 eV shift of the optical absorption edge of ZnO. Deuterium causes a smaller shift. Titanium metal is used to bind hydrogen as it diffuses out of ZnO. Positron annihilation spectroscopy coupled with other techniques point to the presence of oxygen vacancies. Removing hydrogen followed by annealing in oxygen reduces the carrier concentration.

  19. Transient-Absorption Spectroscopy of Cis-Trans Isomerization of N,N-dimethyl-4,4'-Azodianiline with 3D-Printed Temperature-Controlled Sample Holder

    Science.gov (United States)

    Kosenkov, Dmytro; Shaw, James; Zuczek, Jennifer; Kholod, Yana

    2016-01-01

    The laboratory unit demonstrates a project based approach to teaching physical chemistry laboratory where upper-division undergraduates carry out a transient-absorption experiment investigating the kinetics of cis-trans isomerization of N,N-dimethyl-4,4'-azodianiline. Students participate in modification of a standard flash-photolysis spectrometer…

  20. Genus- and species-level identification of dermatophyte fungi by surface-enhanced Raman spectroscopy

    Science.gov (United States)

    Witkowska, Evelin; Jagielski, Tomasz; Kamińska, Agnieszka

    2018-03-01

    This paper demonstrates that surface-enhanced Raman spectroscopy (SERS) coupled with principal component analysis (PCA) can serve as a fast and reliable technique for detection and identification of dermatophyte fungi at both genus and species level. Dermatophyte infections are the most common mycotic diseases worldwide, affecting a quarter of the human population. Currently, there is no optimal method for detection and identification of fungal diseases, as each has certain limitations. Here, for the first time, we have achieved with a high accuracy, differentiation of dermatophytes representing three major genera, i.e. Trichophyton, Microsporum, and Epidermophyton. Two first principal components (PC), namely PC-1 and PC-2, gave together 97% of total variance. Additionally, species-level identification within the Trichophyton genus has been performed. PC-1 and PC-2, which are the most diagnostically significant, explain 98% of the variance in the data obtained from spectra of: Trichophyton rubrum, Trichophyton menatgrophytes, Trichophyton interdigitale and Trichophyton tonsurans. This study offers a new diagnostic approach for the identification of dermatophytes. Being fast, reliable and cost-effective, it has the potential to be incorporated in the clinical practice to improve diagnostics of medically important fungi.

  1. Size-dependent energy levels of InSb quantum dots measured by scanning tunneling spectroscopy.

    Science.gov (United States)

    Wang, Tuo; Vaxenburg, Roman; Liu, Wenyong; Rupich, Sara M; Lifshitz, Efrat; Efros, Alexander L; Talapin, Dmitri V; Sibener, S J

    2015-01-27

    The electronic structure of single InSb quantum dots (QDs) with diameters between 3 and 7 nm was investigated using atomic force microscopy (AFM) and scanning tunneling spectroscopy (STS). In this size regime, InSb QDs show strong quantum confinement effects which lead to discrete energy levels on both valence and conduction band states. Decrease of the QD size increases the measured band gap and the spacing between energy levels. Multiplets of equally spaced resonance peaks are observed in the tunneling spectra. There, multiplets originate from degeneracy lifting induced by QD charging. The tunneling spectra of InSb QDs are qualitatively different from those observed in the STS of other III-V materials, for example, InAs QDs, with similar band gap energy. Theoretical calculations suggest the electron tunneling occurs through the states connected with L-valley of InSb QDs rather than through states of the Γ-valley. This observation calls for better understanding of the role of indirect valleys in strongly quantum-confined III-V nanomaterials.

  2. Production-Level Facial Performance Capture Using Deep Convolutional Neural Networks

    OpenAIRE

    Laine, Samuli; Karras, Tero; Aila, Timo; Herva, Antti; Saito, Shunsuke; Yu, Ronald; Li, Hao; Lehtinen, Jaakko

    2016-01-01

    We present a real-time deep learning framework for video-based facial performance capture -- the dense 3D tracking of an actor's face given a monocular video. Our pipeline begins with accurately capturing a subject using a high-end production facial capture pipeline based on multi-view stereo tracking and artist-enhanced animations. With 5-10 minutes of captured footage, we train a convolutional neural network to produce high-quality output, including self-occluded regions, from a monocular v...

  3. Deep Ocean Mineral Supplementation Enhances the Cerebral Hemodynamic Response during Exercise and Decreases Inflammation Postexercise in Men at Two Age Levels

    Directory of Open Access Journals (Sweden)

    Ching-Yin Wei

    2017-12-01

    Full Text Available Background: Previous studies have consistently shown that oral supplementation of deep ocean minerals (DOM improves vascular function in animals and enhances muscle power output in exercising humans.Purpose: To examine the effects of DOM supplementation on the cerebral hemodynamic response during physical exertion in young and middle-aged men.Design: Double-blind placebo-controlled crossover studies were conducted in young (N = 12, aged 21.2 ± 0.4 years and middle-aged men (N = 9, aged 46.8 ± 1.4 years. The counter-balanced trials of DOM and Placebo were separated by a 2-week washout period. DOM and Placebo were orally supplemented in drinks before, during, and after cycling exercise. DOM comprises desalinated minerals and trace elements from seawater collected ~618 m below the earth's surface.Methods: Cerebral hemodynamic response (tissue hemoglobin was measured during cycling at 75% VO2max using near infrared spectroscopy (NIRS.Results: Cycling time to exhaustion at 75% VO2max and the associated plasma lactate response were similar between the Placebo and DOM trials for both age groups. In contrast, DOM significantly elevated cerebral hemoglobin levels in young men and, to a greater extent, in middle-aged men compared with Placebo. An increased neutrophil to lymphocyte ratio (NLR was observed in middle-aged men, 2 h after exhaustive cycling, but was attenuated by DOM.Conclusion: Our data suggest that minerals and trace elements from deep oceans possess great promise in developing supplements to increase the cerebral hemodynamic response against a physical challenge and during post-exercise recovery for middle-aged men.

  4. Exploring the Deep-Level Reasoning Questions Effect during Vicarious Learning among Eighth to Eleventh Graders in the Domains of Computer Literacy and Newtonian Physics

    Science.gov (United States)

    Gholson, Barry; Witherspoon, Amy; Morgan, Brent; Brittingham, Joshua K.; Coles, Robert; Graesser, Arthur C.; Sullins, Jeremiah; Craig, Scotty D.

    2009-01-01

    This paper tested the deep-level reasoning questions effect in the domains of computer literacy between eighth and tenth graders and Newtonian physics for ninth and eleventh graders. This effect claims that learning is facilitated when the materials are organized around questions that invite deep-reasoning. The literature indicates that vicarious…

  5. Reflectance-difference spectroscopy as an optical probe for in situ determination of doping levels in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Lastras-Martinez, A.; Lara-Velazquez, I.; Balderas-Navarro, R.E.; Ortega-Gallegos, J.; Guel-Sandoval, S.; Lastras-Martinez, L.F. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi, SLP 78000 (Mexico)

    2008-07-01

    We report on in situ Reflectance Difference Spectroscopy measurements carried out on GaAs(001). Measurements were performed at temperatures of 580 C and 430 C, in both n and p-type doped films and for both (2 x 4) and c(4 x 4) reconstructions. Samples employed were grown by Molecular Beam Epitaxy with doping levels in the range from 10{sup 16}-10{sup 19} cm{sup -3}. We demonstrate the potential of Reflectance Difference Spectroscopy for impurity level determinations under growth conditions. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. A deep view in cultural heritage - confocal micro X-ray spectroscopy for depth resolved elemental analysis

    International Nuclear Information System (INIS)

    Kanngiesser, B.; Malzer, W.; Mantouvalou, I.; Sokaras, D.; Karydas, A.G.

    2012-01-01

    applications of confocal X-ray microscopy including depth profiling speciation studies by means of confocal X-ray absorption near edge structure (XANES) spectroscopy. The solid mathematical formulation developed for the quantitative in-depth elemental analysis of stratified materials is exemplified and depth profile reconstruction techniques are discussed. Selected CH applications related to the characterization of painted layers from paintings and decorated artifacts (enamels, glasses and ceramics), but also from the study of corrosion and patina layers in glass and metals, respectively, are presented. The analytical capabilities, limitations and future perspectives of the two variants of the confocal micro X-ray spectroscopy, 3D micro-XRF and 3D micro-PIXE, with respect to CH applications are critically assessed and discussed. (orig.)

  7. AlxGa1--xN/GaN band offsets determined by deep-level emission

    International Nuclear Information System (INIS)

    Hang, D. R.; Chen, C. H.; Chen, Y. F.; Jiang, H. X.; Lin, J. Y.

    2001-01-01

    We present studies of the compositional dependence of the optical properties of Al x Ga 1-x N(0 x Ga 1-x N. As aluminum concentration increases, the color of the band changes from yellow (2.2 eV) to blue (2.6 eV). The shift was less than that of the band gap. Together with previously published studies, it implies that the deep acceptor level is pinned to a common reference level to both materials, thus the deep level responsible for the yellow emission is used as a common reference level to determine the band alignment in Al x Ga 1-x N/GaN heterojunctions. Combining with the near-band-edge modulation spectra, the estimated ratio of conduction-to-valence band discontinuity is 65:35. Our results are close to the values obtained from PL measurements on Al 0.14 Ga 0.86 N/GaN quantum wells and those calculated by linear muffin-tin orbital method and linearized augmented plane wave method. copyright 2001 American Institute of Physics

  8. Guidelines for the operation and closure of deep geological repositories for the disposal of high level and alpha bearing wastes

    International Nuclear Information System (INIS)

    1991-10-01

    The operation and closure of a deep geological repository for the disposal of high level and alpha bearing wastes is a long term project involving many disciplines. This unique combination of nuclear operations in a deep underground location will require careful planning by the operating organization. The basic purpose of the operation stage of the deep repository is to ensure the safe disposal of the radioactive wastes. The purpose of the closure stage is to ensure that the wastes are safely isolated from the biosphere, and that the surface region can be returned to normal use. During these two stages of operation and closure, it is essential that both workers and the public are safely protected from radiation hazards, and that workers are protected from the hazards of working underground. For these periods of the repository, it is essential to carry out monitoring for purposes of radiological protection, and to continue testing and investigations to provide data for repository performance confirmation and for final safety assessment. Over the lengthy stages of operation and closure, there will be substantial feedback of experience and generation of site data. These will lead both to improved quality of operation and a better understanding of the site characteristics, thereby enhancing the confidence in the ability of the repository system to isolate the waste and protect future generations. 15 refs

  9. Transient photoconductivity in amorphous semiconductors

    International Nuclear Information System (INIS)

    Mpawenayo, P.

    1997-07-01

    Localized states in amorphous semiconductors are divided in disorder induced shallow trap levels and dangling bonds deep states. Dangling bonds are assumed here to be either neutral or charged and their energy distribution is a single gaussian. Here, it is shown analytically that transient photocurrent in amorphous semiconductors is fully controlled by charge carriers transitions between localized states for one part and tunneling hopping carriers on the other. Localized dangling bonds deep states act as non radiative recombination centres, while hopping tunnelling is assisted by the Coulomb interaction between defects sites. The half-width of defects distribution is the disorder parameter that determines the carrier hopping time between defects sites. The macroscopic time that explains the long decay response times observed will all types of amorphous semiconductors is duly thought to be temperature dependent. Basic equations developed by Longeaud and Kleider are solved for the general case of a semiconductor after photo-generation. It turns out that the transient photoconductivity decay has two components; one with short response times from carriers trap-release transitions between shallow levels and extended states and a hopping component made of inter-dependent exponentials whose time constants span in larger ranges depending on disorder. The photoconductivity hopping component appears as an additional term to be added to photocurrents derived from existing models. The results of the present study explain and complete the power law decay derived in the multiple trapping models developed 20 years ago only in the approximation of the short response time regime. The long response time regime is described by the hopping macroscopic time. The present model is verified for all samples of amorphous semiconductors known so far. Finally, it is proposed to improved the modulated photoconductivity calculation techniques by including the long-lasting hopping dark documents

  10. Modulated Raman Spectroscopy for Enhanced Cancer Diagnosis at the Cellular Level

    Science.gov (United States)

    De Luca, Anna Chiara; Dholakia, Kishan; Mazilu, Michael

    2015-01-01

    Raman spectroscopy is emerging as a promising and novel biophotonics tool for non-invasive, real-time diagnosis of tissue and cell abnormalities. However, the presence of a strong fluorescence background is a key issue that can detract from the use of Raman spectroscopy in routine clinical care. The review summarizes the state-of-the-art methods to remove the fluorescence background and explores recent achievements to address this issue obtained with modulated Raman spectroscopy. This innovative approach can be used to extract the Raman spectral component from the fluorescence background and improve the quality of the Raman signal. We describe the potential of modulated Raman spectroscopy as a rapid, inexpensive and accurate clinical tool to detect the presence of bladder cancer cells. Finally, in a broader context, we show how this approach can greatly enhance the sensitivity of integrated Raman spectroscopy and microfluidic systems, opening new prospects for portable higher throughput Raman cell sorting. PMID:26110401

  11. XMM-Newton and Swift spectroscopy of the newly discovered very faint X-ray transient IGR J17494-3030

    NARCIS (Netherlands)

    Armas Padilla, M.; Wijnands, R.; Degenaar, N.

    2013-01-01

    A growing group of low-mass X-ray binaries are found to be accreting at very faint X-ray luminosities of <1036 erg s−1 (2-10 keV). One such system is the new X-ray transient IGR J17494-3030. We present Swift and XMM-Newton observations obtained during its 2012 discovery outburst. The Swift

  12. Feasibility of high level radioactive waste disposal in deep sea sediments

    International Nuclear Information System (INIS)

    Buckley, D.E.

    1987-01-01

    For the past ten years, an international program has been conducted to investigate the concept feasibility for disposing of spent nuclear fuel waste in deep ocean sediments. These studies by the Seabed Working Group were coordinated by the Nuclear Energy Agency of the Organization for Economic Cooperation and Development. Penetrators have been considered as the primary method of waste emplacement. This required emphasis on studies of the nature of the plastic sediments which would form the primary barrier to the release of radionuclides into the biosphere. Site qualification guidelines, included criteria for tectonic and sedimentary stability over periods of at least 10 5 years. Using these guidelines two potential areas were identified: one in the Madeira Abyssal Plain; and one in the Southern Nares Abyssal Plain, both in the North Atlantic

  13. Studies on the deep-level defects in CdZnTe crystals grown by travelling heater method

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Boru; Jie, Wanqi; Wang, Tao; Xu, Lingyan; Yang, Fan; Yin, Liying; Fu, Xu [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi (China); Nan, Ruihua [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, School of Materials and Chemical Engineering, Xi' an Technological University, Xi' an (China)

    2017-05-15

    The variation of deep level defects along the axis of CZT:In ingots grown by Travelling Heater Method was investigated by the means of thermally stimulated current (TSC) spectra. Models for the reaction among different defects In, Te{sub i}, and V{sub Cd} were used to analyze the variation of deep level defects along the growth direction. It was found that the density of In dopant-related defects is lower in the tip, but those of Te antisites and Te interstitials are higher in the tip. The density of cadmium vacancy exhibits an initial increase followed by a decrease from the tip to tail of the ingot. In PL spectra, the intensities of (D{sub 0}, X), (DAP) and D{sub complex} peaks obviously increase from the tip to the tail, due to the increase of the density of In dopant-related defects (IN{sup +}{sub CD}), Cd vacancies, and impurities. The low concentration of net free holes was found by Hall measurements, and high resistivity with p-type conduction was demonstrated from I-V analysis. The mobility for electrons was found to increase significantly from 634 ± 26 cm{sup 2} V{sup -1} s{sup -1} in the tip to 860 ± 10 cm{sup 2} V{sup -1} s{sup -1} in the tail, due to the decrease of the deep level defect densities. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Muon level crossing resonance spectroscopy applied to free-radical formation

    International Nuclear Information System (INIS)

    Venkateswaran, K.; Barnabas, M.V.; Walker, D.C.

    1989-01-01

    Muon Level Crossing Resonance Spectroscopy has been used to explore two aspects of muonium chemistry: unique free radicals and muonated radical yields. (1) A variety of new free-radicals have been seen by LCR. For instance, in thioacetamide the only radical produced from muonium is the S sm-bullet radical formed when Mu adds to the C of the C=S bond. In allylbenzene a whole range of radicals form with substantial yields (two side-chain and three ring additions); whereas in styrene, 85% of the radicals have Mu bonded to the end C of the side-chain and there is no meta-adduct at all. (2) Absolute yields of the radicals formed by interaction of muonium atoms in water with acrylamide as a solute (and with benzene in n-hexane) have shown that all muons not directly incorporated into diamagnetic molecules (such as MuH) appear as muonated free radicals. i.e. the missing fraction is found

  15. Molecular Level Structure and Dynamics of Electrolytes Using 17O Nuclear Magnetic Resonance Spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Murugesan, Vijayakumar; Han, Kee Sung; Hu, Jianzhi; Mueller, Karl T.

    2017-03-19

    Electrolytes help harness the energy from electrochemical processes by serving as solvents and transport media for redox-active ions. Molecular-level interactions between ionic solutes and solvent molecules – commonly referred to as solvation phenomena – give rise to many functional properties of electrolytes such as ionic conductivity, viscosity, and stability. It is critical to understand the evolution of solvation phenomena as a function of competing counterions and solvent mixtures to predict and design the optimal electrolyte for a target application. Probing oxygen environments is of great interest as oxygens are located at strategic molecular sites in battery solvents and are directly involved in inter- and intramolecular solvation interactions. NMR signals from 17O nuclei in battery electrolytes offer nondestructive bulk measurements of isotropic shielding, electric field gradient tensors, and transverse and longitudinal relaxation rates, which are excellent means for probing structure, bonding, and dynamics of both solute and solvent molecules. This article describes the use of 17O NMR spectroscopy in probing the solvation structures of various electrolyte systems ranging from transition metal ions in aqueous solution to lithium cations in organic solvent mixtures.

  16. Theory of coherent Stark nonlinear spectroscopy in a three-level system

    International Nuclear Information System (INIS)

    Loiko, Yurii; Serrat, Carles

    2007-01-01

    Coherent Stark nonlinear spectroscopy (CSNS) is a spectroscopic tool based on the cancellation of the phase sensitivity at frequency 5ω in the ultrafast four-wave mixing (FWM) of two-color pulses with frequencies ω and 3ω. We develop a theory for CSNS in three-level V-type systems, and reveal that the mechanism for the phase sensitivity at 5ω is the quantum interference between the two primary paths in the FWM of the ω and 3ω fields. We find that the cancellation phenomenon occurs when the probability amplitude of one of these two primary pathways becomes equal to zero due to the competition effect between the two allowed transitions in the V-type system. The analytical expressions that describe the phase-sensitivity phenomenon and the conditions for its cancellation have been derived on the basis of perturbation theory, and are confirmed by numerical integration of the density matrix and Maxwell equations. We argue that CSNS can be utilized, in particular, for the investigation of optically dense media

  17. Anterior insula GABA levels correlate with emotional aspects of empathy: a proton magnetic resonance spectroscopy study.

    Directory of Open Access Journals (Sweden)

    Qianfeng Wang

    Full Text Available Empathy is a multidimensional construct referring to the capacity to understand and share the emotional and affective states of another person. Cerebral γ-aminobutyric acid (GABA-ergic levels are associated with a variety of neurological and psychiatric disorders. However, the role of the GABA system in different dimensions of empathy has not been investigated.Thirty-two right-handed healthy volunteers took part in this study. We used proton magnetic resonance spectroscopy to determine GABA concentrations in the anterior insula (AI and the anterior cingulate cortex (ACC and to examine the relationship between the GABA concentrations and the subcomponents of empathy evaluated by the Interpersonal Reactivity Index (IRI.Pearson correlation analyses (two-tailed showed that AI GABA was significantly associated with the empathy concern score (r = 0.584, p<0.05 and the personal distress score (r = 0.538, p<0.05 but not significantly associated with other empathy subscales. No significant correlation was found between ACC GABA and empathy subscores.Left AI GABA was positively correlated with the emotional aspects of empathy. These preliminary findings call into question whether AI GABA alterations might predict empathy dysfunction in major psychiatric disorders such as autism and schizophrenia, which have been described as deficits in emotional empathic abilities.

  18. Study on deep levels in near-surface region of Hgsub(1-x)Cdsub(x)Te semiconductor

    International Nuclear Information System (INIS)

    Antonov, V.V.; Vojtsekhovskij, A.V.; Kazak, E.P.; Lanskaya, O.G.; Pakhorukov, V.A.

    1983-01-01

    Experimental investigation into MOS-structures on the basis of narrow-band n-Hgsub(1-x)Cdsub(X)Te semiconductor was conducted. Anode-oxide film, grown in 0.1N KOH solution in ethylenglycol was used as dielectric laer, olt-farad characteristics of the MOS- structures, measured, at different frequencies of test voltage, testify to the presence of deep monoenergetic levels (Esub(t)) in near surface region of semicondUctor located within the limits of the energy gap of Hgsub(1-x)Cdsub(x)Te. Two types of levels are observed in the n-Hgsub(1-x)Cdsub(x)Te-base MOS-structures at x approximately equal to 0.21: Isub(t)=0.105-0.096 eV and Esub(t)=0.045-0.042 eV (with respect to the valent zone ceiling). The frequency dependence of the equivalent parallel conductivity of the Hgsub(1-x)Cdsub(x)Te-base MOS-structure different voltages on a field electrode was used to show, that the observed deep level has the bulk nature. Results of numeral estimations of the state densities on the impurity center and of capture cross-section of a positive charge (deltasub(p)=6.7x10 -17 -1.4x10 -16 )sm 2 ) are given

  19. Transient pseudohypoaldosteronism

    Directory of Open Access Journals (Sweden)

    Stajić Nataša

    2011-01-01

    Full Text Available Introduction. Infants with urinary tract malformations (UTM presenting with urinary tract infection (UTI are prone to develop transient type 1 pseudohypoaldosteronism (THPA1. Objective. Report on patient series with characteristics of THPA1, UTM and/or UTI and suggestions for the diagnosis and therapy. Methods. Patients underwent blood and urine electrolyte and acid-base analysis, serum aldosterosterone levels and plasma rennin activity measuring; urinalysis, urinoculture and renal ultrasound were done and medical and/or surgical therapy was instituted. Results. Hyponatraemia (120.9±5.8 mmol/L, hyperkalaemia (6.9±0.9 mmol/L, metabolic acidosis (plasma bicarbonate, 11±1.4 mmol/L, and a rise in serum creatinine levels (145±101 μmol/L were associated with inappropriately high urinary sodium (51.3±17.5 mmol/L and low potassium (14.1±5.9 mmol/L excretion. Elevated plasma aldosterone concentrations (170.4±100.5 ng/dL and the very high levels of the plasma aldosterone to potassium ratio (25.2±15.6 together with diminished urinary K/Na values (0.31±0.19 indicated tubular resistance to aldosterone. After institution of appropriate medical and/or surgical therapy, serum electrolytes, creatinine, and acid-base balance were normalized. Imaging studies showed ureteropyelic or ureterovesical junction obstruction in 3 and 2 patients, respectively, posterior urethral valves in 3, and normal UT in 1 patient. According to our knowledge, this is the first report on THPA1 in the Serbian literature. Conclusion. Male infants with hyponatraemia, hyperkalaemia and metabolic acidosis have to have their urine examined and the renal ultrasound has to be done in order to avoid both, the underdiagnosis of THPA1 and the inappropriate medication.

  20. Characterization of combustion chamber products by core-level photoabsorption spectroscopy

    International Nuclear Information System (INIS)

    Kellar, S.A.; Huff, W.R.A.; Moler, E.J.

    1997-01-01

    The lubricating performance of motor oil is adversely affected by the carbon soot contamination that is a natural by-product of the combustion process. Particularly in diesel engines, open-quote blow-by close-quote is a problem that greatly decreases the longevity of the engine-lubricating oil. Motor oil manufacturers spend considerable resources developing new oil formulations that counteract the adverse affects of this combustion soot. At present, the only effective way to test new formulations is in a working engine. This process is obviously expensive and not especially efficient. In this ongoing work in collaboration with Chevron Research and Technology, the authors goal is to find a form of carbon that chemically resembles the soot created by the open-quote blow-by close-quote in a diesel engine. The chemically correct soot substitute can be used in bench tests to replace the expensive full motor testing for new formulations. The final testing would still be done in the test motors but only with promising candidates. To these ends, Near Edge X-ray Adsorption spectroscopy Extended Fine Structure (NEXAFS) is an attractive technique in that it has chemical specificity through the core-level binding energy and because it probes the chemically important unoccupied molecular orbitals of the material. Core-level photoabsorption has been used to characterize the empty electronic states of a wide variety of materials. Specifically, the near-edge region of the photoabsorption process has been used to determine the relative quantity of sp 2 and sp 3 bonding in carbon films. The samples were fine grained powders pressed into pellets. The C(1s) absorption spectra were collected from each sample by measuring the total electron yield from the sample as a function of photon energy. The absorption intensity was normalized to the incoming photon flux by measuring the photoyield from a fine gold mesh

  1. [Noninvasive detection of hematocrit and the mean corpuscular hemoglobin concentration levels by Vis-NIR spectroscopy].

    Science.gov (United States)

    Zhao, Jing; Lin, Ling; Lu, Xiao-Zuo; Li, Gang

    2014-03-01

    Hematocrit (HCT) and mean hemoglobin concentration(MCHC) play a very important role in preventing cardiovascular disease and anemia. A method was developed on the basis of spectroscopy to detect HCT and MCHC non-invasively and accurately. The anatomical study showed that the blood rheology abnormalities and blood viscosity's changes can cause the changes of tongue, so there is a certain correlation between tongue and blood components. Reflectance spectrums from the tongue tips of 240 volunteers were collected, then the tongue pictures were captured and the biochemical analysis results were recorded at the same time. The 240 samples were separated into two parts: calibration sample and test sample. Spectra were then subjected to a partial least squares regression (PLSR) analysis to develop mathematics models for predicting HCT levels. The correlation between the data and prediction of HCT and MCHC yielded calibration samples value of 0.998 and 0.938. HCT and MCHC levels of test samples predicted by this model from Visible-Near infrared spectra provided a coefficient of determination in prediction of 0.979 and 0.883 with an average relative error of prediction of 1.65% and 1.88%, a root mean square error of prediction of 4.066 and 4.139. From the experiment results we can see that the model which was built before can better predict the HCT and MCHC, and the results also showed that spectrometry method may provide a promising approach to the noninvasive measurement of human HCT and MCHC with a combination of PLSR analysis.

  2. N-Acetylcysteine Normalizes Glutamate Levels in Cocaine-Dependent Patients: A Randomized Crossover Magnetic Resonance Spectroscopy Study

    NARCIS (Netherlands)

    Schmaal, Lianne; Veltman, Dick J.; Nederveen, Aart; van den Brink, Wim; Goudriaan, Anna E.

    2012-01-01

    Treatment with N-acetylcysteine (NAC) normalizes glutamate (Glu) homeostasis and prevents relapse in drug-dependent animals. However, the effect of NAC on brain Glu levels in substance-dependent humans has not yet been investigated. Proton magnetic resonance spectroscopy (H-1 MRS) was used to

  3. N-Acetylcysteine Normalizes Glutamate Levels in Cocaine-Dependent Patients: A Randomized Crossover Magnetic Resonance Spectroscopy Study

    NARCIS (Netherlands)

    Schmaal, L.; Veltman, D.J.; Nederveen, A.; van den Brink, W.; Goudriaan, A.E.

    2012-01-01

    Treatment with N-acetylcysteine (NAC) normalizes glutamate (Glu) homeostasis and prevents relapse in drug-dependent animals. However, the effect of NAC on brain Glu levels in substance-dependent humans has not yet been investigated. Proton magnetic resonance spectroscopy (1 H MRS) was used to

  4. Knickpoint retreat and transient bedrock channel morphology triggered by base-level fall in small bedrock river catchments: The case of the Isle of Jura, Scotland

    Science.gov (United States)

    Castillo, Miguel; Bishop, Paul; Jansen, John D.

    2013-01-01

    A sudden drop in river base-level can trigger a knickpoint that propagates throughout the fluvial network causing a transient state in the landscape. Knickpoint retreat has been confirmed in large fluvial settings (drainage areas > 100 km2) and field data suggest that the same applies to the case of small bedrock river catchments (drainage areas UK), where rivers incise into dipping quartzite. The mapping of raised beach deposits and strath terraces, and the analysis of stream long profiles, were used to identify knickpoints that had been triggered by base-level fall. Our results indicate that the distance of knickpoint retreat scales to the drainage area in a power law function irrespective of structural setting. On the other hand, local channel slope and basin size influence the vertical distribution of knickpoints. As well, at low drainage areas (~ 4 km2) rivers are unable to absorb the full amount of base-level fall and channel reach morphology downstream of the knickpoint tends towards convexity. The results obtained here confirm that knickpoint retreat is mostly controlled by stream discharge, as has been observed for other transient landscapes. Local controls, reflecting basin size and channel slope, have an effect on the vertical distribution of knickpoints; such controls are also related to the ability of rivers to absorb the base-level fall.

  5. Transient analyzer

    International Nuclear Information System (INIS)

    Muir, M.D.

    1975-01-01

    The design and design philosophy of a high performance, extremely versatile transient analyzer is described. This sub-system was designed to be controlled through the data acquisition computer system which allows hands off operation. Thus it may be placed on the experiment side of the high voltage safety break between the experimental device and the control room. This analyzer provides control features which are extremely useful for data acquisition from PPPL diagnostics. These include dynamic sample rate changing, which may be intermixed with multiple post trigger operations with variable length blocks using normal, peak to peak or integrate modes. Included in the discussion are general remarks on the advantages of adding intelligence to transient analyzers, a detailed description of the characteristics of the PPPL transient analyzer, a description of the hardware, firmware, control language and operation of the PPPL transient analyzer, and general remarks on future trends in this type of instrumentation both at PPPL and in general

  6. Ultra-fast X-ray absorption spectroscopy for the study of matter in transient regime; Spectroscopie d'absorption ultra-rapide de rayonnement X pour l'etude de la matiere en regime transitoire

    Energy Technology Data Exchange (ETDEWEB)

    Lecherbourg, L

    2007-12-15

    In this work, we study the physics of dense matter, plasmas or solids, using X-ray absorption spectroscopy. Through the use of sources produced by laser-matter interaction, we have measured the absorption spectra of aluminum and bromine plasmas, as well as those of vanadium dioxide (VO{sub 2}). The measurement of absorption coefficients allows us to probe the dense matter and to study its properties. The experiments are carried out following the same principle: they use the same experimental set-up, called pump-probe. When the matter is dense, the absorption properties of an atom are modified by the surrounding environment. In a plasma, it is mainly the bound- bound transitions which are altered: the shapes of those spectral rays are modified. In a solid, the position of the neighbouring atoms in relation to the absorbing atom modify the structure of absorption levels (bound-free transition). The study of this structure allows us to measure the parameters of the material, and provides information such as the state of the electronic band or the interatomic gaps. The experiments carried out at the LULI have allowed us to probe plasmas in the relatively unknown regime of the Warm Dense Matter. One of the key parameters is that the plasma is characterised independently (FDI diagnostic). It allows for a better comparison of the measured absorption against a calculation made with the numerical model OPA-S. The experiments carried out at INRS have led to the realisation of an experimental system having the characteristics which allow the study of the dynamics of solids showing ultra-fast phase transition. For those experiments, we have used vanadium dioxide as a model system allowing us to test the feasibility of the method. (author)

  7. Excited-State Dynamics of a DNA Duplex in a Deep Eutectic Solvent Probed by Femtosecond Time-Resolved IR Spectroscopy.

    Science.gov (United States)

    de La Harpe, Kimberly; Kohl, Forrest R; Zhang, Yuyuan; Kohler, Bern

    2018-03-08

    To better understand how the solvent influences excited-state deactivation in DNA strands, femtosecond time-resolved IR (fs-TRIR) pump-probe measurements were performed on a d(AT) 9 ·d(AT) 9 duplex dissolved in a deep eutectic solvent (DES) made from choline chloride and ethylene glycol in a 1:2 mol ratio. This solvent, known as ethaline, is a member of a class of ionic liquids capable of solubilizing DNA with minimal disruption to its secondary structure. UV melting analysis reveals that the duplex studied here melts at 18 °C in ethaline compared to 50 °C in aqueous solution. Ethaline has an excellent transparency window that facilitates TRIR measurements in the double-bond stretching region. Transient spectra recorded in deuterated ethaline at room temperature indicate that photoinduced intrastrand charge transfer occurs from A to T, yielding the same exciplex state previously detected in aqueous solution. This state decays via charge recombination with a lifetime of 380 ± 10 ps compared to the 300 ± 10 ps lifetime measured earlier in D 2 O solution. The TRIR data strongly suggest that the long-lived exciplex forms exclusively in the solvated duplex, and not in the denatured single strands, which appear to have little, if any, base stacking. The longer lifetime of the exciplex state in the DES compared to aqueous solution is suggested to arise from reduced stabilization of the charge transfer state, resulting in slower charge recombination on account of Marcus inverted behavior.

  8. Mapping vaccinia virus DNA replication origins at nucleotide level by deep sequencing.

    Science.gov (United States)

    Senkevich, Tatiana G; Bruno, Daniel; Martens, Craig; Porcella, Stephen F; Wolf, Yuri I; Moss, Bernard

    2015-09-01

    Poxviruses reproduce in the host cytoplasm and encode most or all of the enzymes and factors needed for expression and synthesis of their double-stranded DNA genomes. Nevertheless, the mode of poxvirus DNA replication and the nature and location of the replication origins remain unknown. A current but unsubstantiated model posits only leading strand synthesis starting at a nick near one covalently closed end of the genome and continuing around the other end to generate a concatemer that is subsequently resolved into unit genomes. The existence of specific origins has been questioned because any plasmid can replicate in cells infected by vaccinia virus (VACV), the prototype poxvirus. We applied directional deep sequencing of short single-stranded DNA fragments enriched for RNA-primed nascent strands isolated from the cytoplasm of VACV-infected cells to pinpoint replication origins. The origins were identified as the switching points of the fragment directions, which correspond to the transition from continuous to discontinuous DNA synthesis. Origins containing a prominent initiation point mapped to a sequence within the hairpin loop at one end of the VACV genome and to the same sequence within the concatemeric junction of replication intermediates. These findings support a model for poxvirus genome replication that involves leading and lagging strand synthesis and is consistent with the requirements for primase and ligase activities as well as earlier electron microscopic and biochemical studies implicating a replication origin at the end of the VACV genome.

  9. Feasibility of high level radioactive waste disposal in deep sea sediments

    International Nuclear Information System (INIS)

    Buckley, D.E.

    1987-01-01

    For the past ten years, an international program has been conducted to investigate the concept feasibility for disposing of spent nuclear fuel waste in deep ocean sediments. These studies by the Seabed Working Group were coordinated by the Nuclear Energy Agency of the Organization for Economic Cooperation and Development. Penetrators have been considered as the primary method of waste emplacement. This required emphasis on studies of the nature of the plastic sediments which would form the primary barrier to the release of radionuclides into the biosphere. Site qualification guidelines, included criteria for tectonic and sedimentary stability over periods of at least 10 5 years. Using these guidelines two potential areas were identified: one in the Madeira Abyssal Plain; and one in the Southern Nares Abyssal Plain, both in the North Atlantic. The sediment barrier properties are quite different in terms of dominant mineralogy (carbonates in MAP, and silicous clays in SNAP). The MAP is dominated by thick wide-spread turbidites, but SNAP is dominated by thin discontinuous turbidites

  10. Decomposition of groundwater level fluctuations using transfer modelling in an area with shallow to deep unsaturated zones

    Science.gov (United States)

    Gehrels, J. C.; van Geer, F. C.; de Vries, J. J.

    1994-05-01

    Time series analysis of the fluctuations in shallow groundwater levels in the Netherlands lowlands have revealed a large-scale decline in head during recent decades as a result of an increase in land drainage and groundwater withdrawal. The situation is more ambiguous in large groundwater bodies located in the eastern part of the country, where the unsaturated zone increases from near zero along the edges to about 40 m in the centre of the area. As depth of the unsaturated zone increases, groundwater level reacts with an increasing delay to fluctuations in climate and influences of human activities. The aim of the present paper is to model groundwater level fluctuations in these areas using a linear stochastic transfer function model, relating groundwater levels to estimated precipitation excess, and to separate artificial components from the natural groundwater regime. In this way, the impact of groundwater withdrawal and the reclamation of a 1000 km 2 polder area on the groundwater levels in the adjoining higher ground could be assessed. It became evident that the linearity assumption of the transfer functions becomes a serious drawback in areas with the deepest groundwater levels, because of non-linear processes in the deep unsaturated zone and the non-synchronous arrival of recharge in the saturated zone. Comparison of the results from modelling the influence of reclamation with an analytical solution showed that the lowering of groundwater level is partly compensated by reduced discharge and therefore is less than expected.

  11. Rapid determination of sugar level in snack products using infrared spectroscopy.

    Science.gov (United States)

    Wang, Ting; Rodriguez-Saona, Luis E

    2012-08-01

    Real-time spectroscopic methods can provide a valuable window into food manufacturing to permit optimization of production rate, quality and safety. There is a need for cutting edge sensor technology directed at improving efficiency, throughput and reliability of critical processes. The aim of the research was to evaluate the feasibility of infrared systems combined with chemometric analysis to develop rapid methods for determination of sugars in cereal products. Samples were ground and spectra were collected using a mid-infrared (MIR) spectrometer equipped with a triple-bounce ZnSe MIRacle attenuated total reflectance accessory or Fourier transform near infrared (NIR) system equipped with a diffuse reflection-integrating sphere. Sugar contents were determined using a reference HPLC method. Partial least squares regression (PLSR) was used to create cross-validated calibration models. The predictability of the models was evaluated on an independent set of samples and compared with reference techniques. MIR and NIR spectra showed characteristic absorption bands for sugars, and generated excellent PLSR models (sucrose: SEP 0.96). Multivariate models accurately and precisely predicted sugar level in snacks allowing for rapid analysis. This simple technique allows for reliable prediction of quality parameters, and automation enabling food manufacturers for early corrective actions that will ultimately save time and money while establishing a uniform quality. The U.S. snack food industry generates billions of dollars in revenue each year and vibrational spectroscopic methods combined with pattern recognition analysis could permit optimization of production rate, quality, and safety of many food products. This research showed that infrared spectroscopy is a powerful technique for near real-time (approximately 1 min) assessment of sugar content in various cereal products. © 2012 Institute of Food Technologists®

  12. Study of radioactivity levels in detergent powders samples by gamma spectroscopy

    Directory of Open Access Journals (Sweden)

    Ali A. Abojassim

    2014-10-01

    Full Text Available This study focuses on the evaluation of the natural radioactivity levels in ten samples of the detergent powders that available in Iraqi markets. We have determined the specific activities of uranium, thorium and potassium using gamma spectroscopy and calculation of radiation hazard indices. The results of the activities of radionuclides (238U, 232Th, 40K for detergent powders samples, are found that the 238U specific activities were varied from (11.489 ± 2.089 Bq/kg to (36.062 ± 2.478 Bq/kg, while the 232th specific activities were varied from (1.411 ± 0.609 Bq/kg to (9.272 ± 1.642 Bq/kg and 40K were varied from (8.189 ± 2.339 Bq/kg to (91.888 ± 4.164 Bq/kg. These values are always lower than those of raw materials, what is explained by the conservation of radioactive material throughout the manufacturing process. The radium equivalent activity Raeq, the external hazard index Hex and the internal hazard index Hin dose due to natural radioactivity estimated below the regulatory standard recommended which are (370 Bq/kg, 1 and 1 according to OECD 1979 and ICRP 2000, allows us to show that Detergent powders samples products are not contaminated by radioactivity, are healthy and do not have harmful radiological impact on the consumer.

  13. Broadband transient absorption spectroscopy with 1- and 2-photon excitations: Relaxation paths and cross sections of a triphenylamine dye in solution

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, J.; Dobryakov, A. L.; Hecht, S., E-mail: sh@chemie.hu-berlin.de, E-mail: skovale@chemie.hu-berlin.de; Kovalenko, S. A., E-mail: sh@chemie.hu-berlin.de, E-mail: skovale@chemie.hu-berlin.de [Department of Chemistry, Humboldt-Universität zu Berlin, Brook-Taylor-St. 2, 12489 Berlin (Germany); Ioffe, I. N. [Department of Chemistry, Lomonosov Moscow State University, 119991 Moscow (Russian Federation); Granovsky, A. A. [Firefly Project, 117593 Moscow (Russian Federation)

    2015-07-14

    1-photon (382 nm) and 2-photon (752 nm) excitations to the S{sub 1} state are applied to record and compare transient absorption spectra of a push-pull triphenylamine (TrP) dye in solution. After 1-photon excitation, ultrafast vibrational and structural molecular relaxations are detected on a 0.1 ps time scale in nonpolar hexane, while in polar acetonitrile, the spectral evolution is dominated by dipolar solvation. Upon 2-photon excitation, transient spectra in hexane reveal an unexpected growth of stimulated emission (SE) and excited-state absorption (ESA) bands. The behavior is explained by strong population transfer S{sub 1} → S{sub n} due to resonant absorption of a third pump photon. Subsequent S{sub n} → S{sub 1} internal conversion (with τ{sub 1} = 1 ps) prepares a very hot S{sub 1} state which cools down with τ{sub 2} = 13 ps. The pump pulse energy dependence proves the 2-photon origin of the bleach signal. At the same time, SE and ESA are strongly affected by higher-order pump absorptions that should be taken into account in nonlinear fluorescence applications. The 2-photon excitation cross sections σ{sup (2)} = 32 ⋅ 10{sup −50} cm{sup 4} s at 752 nm are evaluated from the bleach signal.

  14. Deep levels in SiC:V by high temperature transport measurements

    Energy Technology Data Exchange (ETDEWEB)

    Mitchel, W.C.; Perrin, R.; Goldstein, J.; Roth, M.; Ahoujja, M.; Smith, S.R.; Solomon, J.S.; Landis, G.; Jenny, J. [Air Force Materials Lab., Wright-Patterson AFB, OH (United States). Research and Technology Div.; Evwaraye, A.O. [Univ. of Dayton, Dayton, OH (United States); Hobgood, H.McD.; Augustine, G.; Balakrishna, V. [Northrop Grumman Corp., Science and Technology Center, Pittsburgh, PA (United States)

    1998-06-01

    Vanadium doped 6H and 4H SiC have been studied with high temperature Hall effect and resistivity, optical absorption and SIMS. The 6H samples were found to exhibit three thermal activation energies, 0.35 eV, 0.7 eV and near mid-gap. The 0.3 eV level is due to thermal ionization of residual uncompensated boron. We attribute the mid-gap level to thermal ionization of the vanadium donor level. The 0.7 eV activation is believed to be due to transfer of electrons from the ionized vanadium acceptor levels to the conduction band. These results suggest that the vanadium donor and acceptor levels are located at E{sub c}-1.42 eV and E{sub V} + 2.4 eV respectively. (orig.) 7 refs.

  15. Basic reasons and the practice of using deep water-bearing levels for liquid radioactive waste disposal

    International Nuclear Information System (INIS)

    Spitsyn, V.I.; Pimenov, M.K.; Balukova, V.D.; Leontichuk, A.S.; Kokorin, I.N.; Yudin, F.P.; Rakov, N.A.

    1978-01-01

    Speculations are presented on the development and organization of liquid radioactive waste underground disposal in deep water-bearing levels completely isolated from other levels and the surface. Major requirements are formulated that are laid down to low-, moderate-and high-radioactive wastes subject to the disposal. Geological and hydrological conditions as well as the scheme and design features of pilot field facilities are described, where works on high-active waste disposal were started in 1972. In 1972 and 1973 450 and 1050 m 3 of the wastes (7.5 and 53 MCi) respecrespectively were disposed. The first results of the pilot disposal and the 3-year surveillance over the plate-collector condition and the performance of the facilities have reaffirmed the feasibility, medical and radiation safety and economic attractiveness of the disposal of wastes with up to 10-25 Ci/l specific activity

  16. High-level HIV-1 Nef transient expression in Nicotiana benthamiana using the P19 gene silencing suppressor protein of Artichoke Mottled Crinckle Virus

    Directory of Open Access Journals (Sweden)

    Bianco Linda

    2009-11-01

    Full Text Available Abstract Background In recent years, different HIV antigens have been successfully expressed in plants by either stable transformation or transient expression systems. Among HIV proteins, Nef is considered a promising target for the formulation of a multi-component vaccine due to its implication in the first steps of viral infection. Attempts to express Nef as a single protein product (not fused to a stabilizing protein in transgenic plants resulted in disappointingly low yields (about 0.5% of total soluble protein. In this work we describe a transient expression system based on co-agroinfiltration of plant virus gene silencing suppressor proteins in Nicotiana benthamiana, followed by a two-step affinity purification protocol of plant-derived Nef. Results The effect of three gene silencing viral suppressor proteins (P25 of Potato Virus X, P19 of either Artichoke Mottled Crinckle virus and Tomato Bushy Stunt virus on Nef transient expression yield was evaluated. The P19 protein of Artichoke Mottled Crinckle virus (AMCV-P19 gave the highest expression yield in vacuum co-agroinfiltration experiments reaching 1.3% of total soluble protein, a level almost three times higher than that previously reported in stable transgenic plants. The high yield observed in the co-agroinfiltrated plants was correlated to a remarkable decrease of Nef-specific small interfering RNAs (siRNAs indicating an effective modulation of RNA silencing mechanisms by AMCV-P19. Interestingly, we also showed that expression levels in top leaves of vacuum co-agroinfiltrated plants were noticeably reduced compared to bottom leaves. Moreover, purification of Nef from agroinfiltrated tissue was achieved by a two-step immobilized metal ion affinity chromatography protocol with yields of 250 ng/g of fresh tissue. Conclusion We demonstrated that expression level of HIV-1 Nef in plant can be improved using a transient expression system enhanced by the AMCV-P19 gene silencing suppressor

  17. Deep uncertainty and broad heterogeneity in country-level social cost of carbon

    Science.gov (United States)

    Ricke, K.; Drouet, L.; Caldeira, K.; Tavoni, M.

    2017-12-01

    The social cost of carbon (SCC) is a commonly employed metric of the expected economic damages expected from carbon dioxide (CO2) emissions. Recent estimates of SCC range from approximately 10/tonne of CO2 to as much as 1000/tCO2, but these have been computed at the global level. While useful in an optimal policy context, a world-level approach obscures the heterogeneous geography of climate damages and vast differences in country-level contributions to global SCC, as well as climate and socio-economic uncertainties, which are much larger at the regional level. For the first time, we estimate country-level contributions to SCC using recent climate and carbon-cycle model projections, empirical climate-driven economic damage estimations, and information from the Shared Socio-economic Pathways. Central specifications show high global SCC values (median: 417 /tCO2, 66% confidence intervals: 168 - 793 /tCO2) with country-level contributions ranging from -11 (-8 - -14) /tCO2 to 86 (50 - 158) /tCO2. We quantify climate-, scenario- and economic damage- driven uncertainties associated with the calculated values of SCC. We find that while the magnitude of country-level social cost of carbon is highly uncertain, the relative positioning among countries is consistent. Countries incurring large fractions of the global cost include India, China, and the United States. The share of SCC distributed among countries is robust, indicating climate change winners and losers from a geopolitical perspective.

  18. Optogalvanic spectroscopy of the hyperfine structure of weak La I lines: discovery of new even parity fine structure levels

    International Nuclear Information System (INIS)

    Siddiqui, Imran; Khan, Shamim; Gamper, B; Windholz, L; Dembczyński, J

    2013-01-01

    The hyperfine structure of weak La I lines was experimentally investigated using laser optogalvanic spectroscopy in a hollow cathode discharge lamp. More than 100 La I lines were investigated and 40 new energy levels were discovered, most of them having even parity. The magnetic hyperfine interaction constants A and in some cases the electric quadrupole interaction constants B for these levels were determined. All the newly discovered levels were confirmed either by additional laser excitations (from other known levels) or by lines in a Fourier transform spectrum which could now be classified. (paper)

  19. Sub-Picosecond Injection of Electrons from Excited {Ru (2,2'-bipy-4,4'-dicarboxy)2(SCN)2} into TiO2 Using Transient Mid-Infrared Spectroscopy

    International Nuclear Information System (INIS)

    Nozik, A.J.; Ghosh, H.N.; Asbury, J.B.; Sprague, J.R.; Ellingson, R.J.; Ferrere, S.; Lian, T.

    1999-01-01

    We have used femtosecond pump-probe spectroscopy to time resolve the injection of electrons into nanocrystalline TiO2 film electrodes under ambient conditions following photoexcitation of the adsorbed dye, [Ru(4,4'-dicarboxy-2,2'-bipyridine)2(NCS)2] (N3). Pumping at one of the metal-to-ligand charge transfer adsorption peaks and probing the absorption of electrons injected into the TiO2 conduction band at 1.52 m and in the range of 4.1 to 7.0 m, we have directly observed the arrival of the injected electrons. Our measurements indicate an instrument-limited 50-fs upper limit on the electron injection time under ambient conditions in air. We have compared the infrared transient absorption for non-injecting (blank) systems consisting of N3 in ethanol and N3 adsorbed to films of nanocrystalline Al2O3 and ZrO2, and found no indication of electron injection at probe wavelengths in the mid-IR (4.1 to 7.0 m). At 1.52 m interferences exist in the observed transient adsorption signal for the blanks

  20. Identification of deep trap energies and influences of oxygen plasma ashing on semiconductor carrier lifetime

    International Nuclear Information System (INIS)

    Koprowski, A; Humbel, O; Plappert, M; Krenn, H

    2015-01-01

    We have performed an analytical study of the effects of oxygen plasma ashing processes in semiconductor device fabrication and its impact on minority carrier lifetime in high voltage semiconductor devices. Our work includes a critical background study of life time killing mechanisms by deep traps imparted into the semiconductor by barrel plasma ashing. The Elymat technique provides the opportunity to measure lifetime and diffusion length of minority carriers and surface photo voltage (SPV) measurement was used to analyse influences of process parameters such as photoresist, time budget and positioning in the process chamber. It was shown that in microwave plasma processes the diffusion length changes severely with tempering at 200 °C, whereas RF-plasma processes show a significant process time-dependence. Batch tools in general suffer from a strong first wafer effect which could be correlated with the static electrical parameters of the semiconductor devices. The trap identities were detected by using deep level transient spectroscopy and the chemical species of the traps has been proven by inductive coupled plasma mass spectrometry. The deep-bandgap trap energies are reliable fingerprints of the chosen process parameters such as process time and of resist-influences. By microwave plasma processes intrinsic Fe and FeB-complex levels were identified and a good agreement with the SPV-measurement and electrical device characteristic was shown. RF-plasma processes impart levels attributed to Pt levels and an additional level, which could be identified as a trap level probably forming a complex of Pt and H. (paper)

  1. Radiotracer Spectroscopy on Group II Acceptors in GaN

    CERN Multimedia

    2002-01-01

    The semiconductor GaN is already used for the production of high power light emitting diodes in the blue and UV spectral range. But the $\\rho$-type doping, which is usually obtained by Mg doping, is still inefficient due to compensation and passivation effects caused by defects present in the material. It is theoretically predicted, that Be is a more promising candidate for $\\rho$-doping with a lower ionization energy of 60meV. It is our goal to investigate the electrical and optical properties of Be- and Mg-related defects in GaN to clarify the problem of compensation and passivation. The used methods are standard spectroscopic methods in semiconductor physics which are improved by using radioactive isotopes. The radioactive decay of $^{7}$Be and $^{28}$Mg is used to clearly correlate different signals with Be or Mg related defects. We intend to use the spectroscopic techniques Deep Level Transient Spectroscopy (DLTS), Thermal Admittance Spectroscopy (TAS), photoluminescence (PL) and additionally Hall-effect...

  2. Development of Human-level Decision Making Algorithm for NPPs through Deep Neural Networks : Conceptual Approach

    International Nuclear Information System (INIS)

    Kim, Seung Geun; Seong, Poong Hyun

    2017-01-01

    Development of operation support systems and automation systems are closely related to machine learning field. However, since it is hard to achieve human-level delicacy and flexibility for complex tasks with conventional machine learning technologies, only operation support systems with simple purposes were developed and high-level automation related studies were not actively conducted. As one of the efforts for reducing human error in NPPs and technical advance toward automation, the ultimate goal of this research is to develop human-level decision making algorithm for NPPs during emergency situations. The concepts of SL, RL, policy network, value network, and MCTS, which were applied to decision making algorithm for other fields are introduced and combined with nuclear field specifications. Since the research is currently at the conceptual stage, more research is warranted.

  3. Deep layer-resolved core-level shifts in the beryllium surface

    DEFF Research Database (Denmark)

    Aldén, Magnus; Skriver, Hans Lomholt; Johansson, Börje

    1993-01-01

    Core-level energy shifts for the beryllium surface region are calculated by means of a Green’s function technique within the tight-binding linear muffin-tin orbitals method. Both initial- and final-state effects in the core-ionization process are fully accounted for. Anomalously large energy shifts...

  4. China's deep geological disposal program for high level radioactive waste, background and status 1998

    International Nuclear Information System (INIS)

    Ju Wang; Xu Guoqing; Guo Yonghai

    2001-01-01

    This paper presents the background and progress made in the study of China's high level radioactive waste, including site screening, site evaluation, the study on radionuclide migration, bentonite, natural analogue studies, and performance assessment, etc. The study on Beishan area, the potential area for China's geological repository, is also presented in this paper. (author)

  5. The application of the csamt method in the tectonic transformation of the deep-level fore exploration in the shandongkeng area in Nanxiong basin

    International Nuclear Information System (INIS)

    Xu Zhan

    2010-01-01

    With the national policy efforts on the strengthening of mining exploration, uranium exploration has also ushered in its second s pring . The topic of the new round exploration is P rospect the deeply minerals . Therefore, the changes of the deep structure of the mining area are the premise to carry out survey work. This article states briefly the working principle and characteristics of CSAMT method. The Application of the CSAMT Method in the Tectonic Transformation of The Deep-Level Exploration in the Shangdongkeng area in Nanxiong basin expresses that the method has a good application and effectiveness in research of deep geological objectives. It provides design basis for the mining exploration of deep-level area. (authors)

  6. Photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Price, W.C.

    1974-01-01

    A survey is given of the development of x-ray and ultraviolet photoelectron spectroscopy. Applications of photoelectron spectroscopy to studies of atomic electronic configurations are discussed, including photoelectron spectra of hydrides isoelectronic with the inert gases; photoelectron spectra of the halogen derivatives of methane; photoelectron spectra of multiple bonded diatomic molecules; spectra and structure of some multiple bonded polyatomic molecules; spectra and structure of triatomic molecules; and methods of orbital assignment of bands in photoelectron spectra. Physical aspects are considered, including intensities; selection rules; dependence of cross section on photoelectron energy; autoionization; angular distribution of photoelectrons; electron-molecule interactions; and transient species. (26 figures, 54 references) (U.S.)

  7. FGOALS-s2 simulation of upper-level jet streams over East Asia: Mean state bias and synoptic-scale transient eddy activity

    Science.gov (United States)

    Song, Fengfei; Zhou, Tianjun

    2013-05-01

    Upper-level jet streams over East Asia simulated by the LASG/IAP coupled climate system model FGOALS-s2 were assessed, and the mean state bias explained in terms of synoptic-scale transient eddy activity (STEA). The results showed that the spatial distribution of the seasonal mean jet stream was reproduced well by the model, except that following a weaker meridional temperature gradient (MTG), the intensity of the jet stream was weaker than in National Centers for Environment Prediction (NCEP)/Department of Energy Atmospheric Model Inter-comparison Project II reanalysis data (NCEP2). Based on daily mean data, the jet core number was counted to identify the geographical border between the East Asian Subtropical Jet (EASJ) and the East Asian Polar-front Jet (EAPJ). The border is located over the Tibetan Plateau according to NCEP2 data, but was not evident in FGOALS-s2 simulations. The seasonal cycles of the jet streams were found to be reasonably reproduced, except that they shifted northward relative to reanalysis data in boreal summer owing to the northward shift of negative MTGs. To identify the reasons for mean state bias, the dynamical and thermal forcings of STEA on mean flow were examined with a focus on boreal winter. The dynamical and thermal forcings were estimated by extended Eliassen-Palm flux ( E) and transient heat flux, respectively. The results showed that the failure to reproduce the tripolar-pattern of the divergence of E over the jet regions led to an unsuccessful separation of the EASJ and EAPJ, while dynamical forcing contributed less to the weaker EASJ. In contrast, the weaker transient heat flux partly explained the weaker EASJ over the ocean.

  8. Intracavity OptoGalvanic Spectroscopy Not Suitable for Ambient Level Radiocarbon Detection

    NARCIS (Netherlands)

    Paul, Dipayan; Meijer, Harro

    2015-01-01

    IntraCavity OptoGalvanic Spectroscopy as a radiocarbon detection technique was first reported by the Murnick group at Rutgers University, Newark, NJ, in 2008. This technique for radiocarbon detection was presented with tremendous potentials for applications in various fields of research.

  9. A statistical strategy to assess cleaning level of surfaces using fluorescence spectroscopy and Wilks’ ratio

    DEFF Research Database (Denmark)

    Stoica, Iuliana-Madalina; Babamoradi, Hamid; van den Berg, Frans

    2017-01-01

    •A statistical strategy combining fluorescence spectroscopy, multivariate analysis and Wilks’ ratio is proposed.•The method was tested both off-line and on-line having riboflavin as a (controlled) contaminant.•Wilks’ ratio signals unusual recordings based on shifts in variance and covariance...... structure described in in-control data....

  10. Determination of the Nucleic Acid Adducts Structure at the Nucleoside/Nucleotide Level by NMR Spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Dračínský, Martin; Pohl, Radek

    2015-01-01

    Roč. 28, č. 2 (2015), s. 155-165 ISSN 0893-228X R&D Projects: GA ČR GA13-24880S Institutional support: RVO:61388963 Keywords : NMR spectroscopy * nucleic acids * nucleotides Subject RIV: CC - Organic Chemistry Impact factor: 3.025, year: 2015

  11. Using Essential Oils to Teach Advanced-Level Organic Chemistry Separation Techniques and Spectroscopy

    Science.gov (United States)

    Bott, Tina M.; Wan, Hayley

    2013-01-01

    Students sometimes have difficulty grasping the importance of when and how basic distillation techniques, column chromatography, TLC, and basic spectroscopy (IR and NMR) can be used to identify unknown compounds within a mixture. This two-part experiment uses mixtures of pleasant-smelling, readily available terpenoid compounds as unknowns to…

  12. Discovery of deep and shallow trap states from step structures of rutile TiO2 vicinal surfaces by second harmonic and sum frequency generation spectroscopy

    International Nuclear Information System (INIS)

    Takahashi, Hiroaki; Watanabe, Ryosuke; Miyauchi, Yoshihiro; Mizutani, Goro

    2011-01-01

    In this report, local electronic structures of steps and terraces on rutile TiO 2 single crystal faces were studied by second harmonic and sum frequency generation (SHG/SFG) spectroscopy. We attained selective measurement of the local electronic states of the step bunches formed on the vicinal (17 18 1) and (15 13 0) surfaces using a recently developed step-selective probing technique. The electronic structures of the flat (110)-(1x1) (the terrace face of the vicinal surfaces) and (011)-(2x1) surfaces were also discussed. The SHG/SFG spectra showed that step structures are mainly responsible for the formation of trap states, since significant resonances from the trap states were observed only from the vicinal surfaces. We detected deep hole trap (DHT) states and shallow electron trap (SET) states selectively from the step bunches on the vicinal surfaces. Detailed analysis of the SHG/SFG spectra showed that the DHT and SET states are more likely to be induced at the top edges of the step bunches than on their hillsides. Unlike the SET states, the DHT states were observed only at the step bunches parallel to [1 1 1][equivalent to the step bunches formed on the (17 18 1) surface]. Photocatalytic activity for each TiO 2 sample was also measured through methylene blue photodegradation reactions and was found to follow the sequence: (110) < (17 18 1) < (15 13 0) < (011), indicating that steps along [0 0 1] are more reactive than steps along [1 1 1]. This result implies that the presence of the DHT states observed from the step bunches parallel to [1 1 1] did not effectively contribute to the methylene blue photodegradation reactions.

  13. The case for deep-sea disposal of low-level solid radioactive wastes

    International Nuclear Information System (INIS)

    Lewis, J.B.

    1983-01-01

    The scientific justification for the sea disposal of low-level solid radioactive wastes is summarized and the relevant national and international codes of practice and legislation are outlined. It is concluded that, since the amount of radioactivity disposed of in the oceans is very small compared with the natural radioactivity, the environmental hazard is small and sea dumping could be increased. (U.K.)

  14. Disposal of high level and long lived radioactive waste in deep geological formation

    International Nuclear Information System (INIS)

    Niezborala, J.M.; Hoorelbeke, J.M.

    2000-01-01

    The status of ANDRA's research program on high level and long lived waste corresponds to the start of construction of the Meuse/Haute-Marne Underground Research Laboratory in an argillite layer, as well as to the selection in 1999 of preliminary disposal concepts corresponding to this layer. The paper describes the preliminary concepts dealing with transuranic waste, high level vitrified waste and potentially disposed spent fuel. Provision is made for a high level of flexibility, in particular with regard to options of reversibility of the disposal process, and to potential evolutions of the waste inventory. These concepts were selected for research purpose to assess by the year 2006 the feasibility of a potential repository, with.respect in particular to safety rules. The paper mentions the research targets of the program aiming at answering major scientific and technological questions raised by the concepts. The program includes the fitting and validation of the modelling, on the basis in particular of the experimental work to be carried out in the Underground Research Laboratory, making it possible to dimension the disposal concepts and to assess their safety. (authors)

  15. A preliminary study on the geochemical environment for deep geological disposal of high level radioactive waste in Korea

    International Nuclear Information System (INIS)

    Kim, Chun Soo; Bae, Dae Seok; Kim, Kyung Su; Koh, Yong Kwon; Park, Byoung Yun

    2000-03-01

    Geochemical study on the groundwater from crystalline rocks (granite and gneiss) for the deep geological disposal of high-level radioactive waste was carried out in order to elucidate the hydrogeochemical and isotope characteristics and geochemical evolution of the groundwater. Study areas are Jungwon, Chojeong, Youngcheon and Yusung for granite region, Cheongyang for gneiss region, and Yeosu for volcanic region. Groundwaters of each study areas weree sampled and analysed systematically. Groundwaters can be grouped by their chemistry and host rock. Origin of the groundwater was proposed by isotope ( 18 O, 2 H, 13 C, 34 S, 87 Sr, 15 N) studies and the age of groundwater was inferred from their tritium contents. Based ont the geochemical and isotope characteristics, the geochemical evolutions of each types of groundwater were simulated using SOLVEQ/CHILLER and PHREEQC programs

  16. Decommissioning of surface facilities associated with repositories for the deep geological disposal of high-level nuclear wastes

    International Nuclear Information System (INIS)

    Heckman, R.A.

    1978-11-01

    A methodology is presented in this paper to evaluate the decommissioning of the surface facilities associated with repositories for the deep geological disposal of high-level nuclear wastes. A cost/risk index (figure of merit), expressed as $/manrem, is proposed as an evaluation criteria. On the basis of this cost/risk index, we gain insight into the advisability of adapting certain decontamination design options into the original facility. Three modes are considered: protective storage, entombment, and dismantlement. Cost estimates are made for the direct labor involved in each of the alternative modes for a baseline design case. Similarly, occupational radiation exposures are estimated, with a larger degree of uncertainty, for each of the modes. Combination of these estimates produces the cost/risk index. To illustrate the methodology, an example using a preliminary baseline repository design is discussed

  17. Predicted peak temperature-rises around a high-level radioactive waste canister emplaced in the deep ocean bed

    International Nuclear Information System (INIS)

    Kipp, K.L.

    1978-06-01

    A simple mathematical model of heat conduction was used to evaluate the peak temperature-rise along the wall of a canister of high-level radioactive waste buried in deep ocean sediment. Three different amounts of vitrified waste, corresponding to standard Harvest, large Harvest, and AVM canisters, and three different waste loadings were studied. Peak temperature-rise was computed for the nine cases as a function of canister geometry and storage time between reprocessing and burial. Lower waste loadings or longer storage times than initially envisaged are necessary to prevent the peak temperature-rise from exceeding 200 0 C. The use of longer, thinner cylinders only modestly reduces the storage time for a given peak temperature. Effects of stacking of waste canisters and of close-packing were also studied. (author)

  18. A preliminary study on the geochemical environment for deep geological disposal of high level radioactive waste in Korea

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chun Soo; Bae, Dae Seok; Kim, Kyung Su; Koh, Yong Kwon; Park, Byoung Yun

    2000-03-01

    Geochemical study on the groundwater from crystalline rocks (granite and gneiss) for the deep geological disposal of high-level radioactive waste was carried out in order to elucidate the hydrogeochemical and isotope characteristics and geochemical evolution of the groundwater. Study areas are Jungwon, Chojeong, Youngcheon and Yusung for granite region, Cheongyang for gneiss region, and Yeosu for volcanic region. Groundwaters of each study areas weree sampled and analysed systematically. Groundwaters can be grouped by their chemistry and host rock. Origin of the groundwater was proposed by isotope ({sup 18}O, {sup 2}H, {sup 13}C, {sup 34}S, {sup 87}Sr, {sup 15}N) studies and the age of groundwater was inferred from their tritium contents. Based ont the geochemical and isotope characteristics, the geochemical evolutions of each types of groundwater were simulated using SOLVEQ/CHILLER and PHREEQC programs.

  19. Containers and overpacks for high-level radioactive waste in deep geological disposal. Conditions: French Corrosion Programme

    International Nuclear Information System (INIS)

    Crusset, D.; Plas, F.; Santarini, G.

    2003-01-01

    Within the framework of the act of French law dated 31 December, 1991, ANDRA (National Radioactive Waste Management Agency) is responsible for conducting the feasibility study on disposal of reversible and irreversible high-level or long-life radioactive waste in deep geological formations. Consequently, ANDRA is carrying out research on corrosion of the metallic materials envisaged for the possible construction of overpacks for vitrified waste packages or containers for spent nuclear fuel. Low-alloy or unalloyed steels and the passive alloys (Fe-Ni-Cr-Mo) constitute the two families of materials studied and ANDRA has set up a research programme in partnership with other research organisations. The 'broad outlines' of the programme, which includes experimental and modelling operations, are presented. (authors)

  20. A preliminary study on the regional fracture systems for deep geological disposal of high level radioactive waste in Korea

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chun Soo; Bae, Dae Seok; Kim, Kyung Su; Koh, Young Kown; Park, Byoung Yoon [Korea Atomic Energy Research Institute, Taejeon (Korea)

    2000-03-01

    For the deep geological disposal of high-level radioactive waste, it is essential to characterize the fracture system in rock mass which has a potential pathways of nuclide. Currently, none of research results are in classification and detailed properties for the fracture system in Korea. This study aims to classify and describe the regional fracture system in lithological and geotectonical point of view using literature review, shaded relief map, and aeromagnetic survey data. This report contains the following: - Theoretical review of the fracture development mechanism. - Overall fault and fracture map. - Geological description on the distributional characteristics of faults and fractures(zone) in terms of lithological domain and tectonical province. 122 refs., 22 figs., 4 tabs. (Author)

  1. Interactive Sea Level Rise App & Online Viewer Offers Deep Dive Into Climate

    Science.gov (United States)

    Turrin, M.; Porter, D. F.; Ryan, W. B. F.; Pfirman, S. L.

    2015-12-01

    Climate has captured the attention of the public but its complexity can cause interested individuals to turn to opinion pieces, news articles or blogs for information. These platforms often oversimplify or present heavily interpreted or personalized perspectives. Data interactives are an extremely effective way to explore complex geoscience topics like climate, opening windows of understanding for the user that have previously been closed. Layering data onto maps through programs like GeoMapApp and the Earth Observer App has allowed users to dig directly into science data, but with only limited scaffolding. The interactive 'Polar Explorer: Sea Level Explorer App' provides a richly layered introduction to a range of topics connected to sea level rise. Each map is supported with a pop up and a short audio file of supplementary material, and an information page that includes the data source and links for further reading. This type of learning platform works well for both the formal and informal learning environment. Through science data displayed as map visualizations the user is invited into topics through an introductory question, such as "Why does sea level change?" After clicking on that question the user moves to a second layer of questions exploring the role of the ocean, the atmosphere, the contribution from the world's glaciers, world's ice sheets and other less obvious considerations such as the role of post-glacial rebound, or the mining of groundwater. Each question ends in a data map, or series of maps, that offer opportunities to interact with the topic. Under the role of the ocean 'Internal Ocean Temperature' offers the user a chance to touch to see temperature values spatially over the world's ocean, or to click through a data series starting at the ocean surface and diving to 5000 meters of depth showing how temperature changes with depth. Other sections, like the role of deglaciation of North America, allow the user to click and see change through

  2. Role of waste packages in the safety of a high level waste repository in a deep geological formation

    International Nuclear Information System (INIS)

    Bretheau, F.; Lewi, J.

    1990-06-01

    The safety of a radioactive waste disposal facility lays on the three following barriers placed between the radioactive materials and the biosphere: the waste package; the engineered barriers; the geological barrier. The function assigned to each of these barriers in the performance assessment is an option taken by the organization responsible for waste disposal management (ANDRA in France), which must show that: expected performances of each barrier (confinement ability, life-time, etc.) are at least equal to those required to fulfill the assigned function; radiation protection requirements are met in all situations considered as credible, whether they be the normal situation or random event situations. The French waste management strategy is based upon two types of disposal depending on the nature and activity of waste packages: - surface disposal intended for low and medium level wastes having half-lives of about 30 years or less and alpha activity less than 3.7 MBq/kg (0.1 Ci/t), for individual packages and less than 0.37 MBq/kg (0.01 Ci/t) in the average. Deep geological disposal intended for TRU and high level wastes. The conditions of acceptance of packages in a surface disposal site are subject to the two fundamental safety rules no. I.2 and III.2.e. The present paper is only dealing with deep geological disposal. For deep geological repositories, three stages are involved: stage preceding definitive disposal (intermediate storage, transportation, handling, setting up in the disposal cavities); stage subsequent to definitive sealing of the disposal cavities but prior to the end of operation of the repository; stage subsequent to closure of the repository. The role of the geological barrier has been determined as the essential part of long term radioactivity confinement, by a working group, set up by the French safety authorities. Essential technical criteria relating to the choice of a site so defined by this group, are the following: very low permeability

  3. Ecological risk assessment of deep geological disposal of high-level nuclear waste

    International Nuclear Information System (INIS)

    Hart, D.R.; Lush, D.L.; Acton, D.W.

    1993-01-01

    Contaminant fate and transport models, radiological dosimetry models, chemical dose-response models and population dynamic models were used to estimate ecological risks to moose and brook trout populations arising from a proposed high-level nuclear waste repository. Risks from potential contaminant releases were compared with risks from physical habitat alteration in constructing a repository and service community, and with risks from increased hunting and fish pressure in the area. For a reference environment typical of a proposed location somewhere in the Canadian Shield, preliminary results suggest that the population consequences of contaminant release will be minor relative to those of habitat alteration and natural resource use

  4. Site selection and characterization processes for deep geologic disposal of high level nuclear waste

    International Nuclear Information System (INIS)

    Costin, L.S.

    1997-10-01

    In this paper, the major elements of the site selection and characterization processes used in the US high level waste program are discussed. While much of the evolution of the site selection and characterization processes have been driven by the unique nature of the US program, these processes, which are well defined and documented, could be used as an initial basis for developing site screening, selection, and characterization programs in other countries. Thus, this paper focuses more on the process elements than the specific details of the US program

  5. Site selection and characterization processes for deep geologic disposal of high level nuclear waste

    International Nuclear Information System (INIS)

    Costin, L.S.

    1997-01-01

    In this paper, the major elements of the site selection and characterization processes used in the U. S. high level waste program are discussed. While much of the evolution of the site selection and characterization processes have been driven by the unique nature of the U. S. program, these processes, which are well-defined and documented, could be used as an initial basis for developing site screening, selection, and characterization programs in other countries. Thus, this paper focuses more on the process elements than the specific details of the U. S. program. (author). 3 refs., 2 tabs., 5 figs

  6. Determination of deep levels in semi-insulating cadmium telluride by thermally stimulated current measurements

    International Nuclear Information System (INIS)

    Scharager, C.; Muller, J.C.; Stuck, R.; Siffert, P.

    1975-01-01

    Thermally stimulated current (TSC) measurements have been performed in high resistivity (rho approximately 10 7 ohms.cm) CdTe γ-ray detectors between 35 and 300K. The TSC curves have been analyzed by different methods, including those taking into account the retrapping of the carriers. The trap characteristics have been determined; especially three levels located at E(v)+0.13eV, E(v)+0.30eV and E(c)-0.55eV have been investigated [fr

  7. Site selection and characterization processes for deep geologic disposal of high level nuclear waste

    Energy Technology Data Exchange (ETDEWEB)

    Costin, L.S. [Sandia National Labs., Albuquerque, NM (United States)

    1997-12-31

    In this paper, the major elements of the site selection and characterization processes used in the U. S. high level waste program are discussed. While much of the evolution of the site selection and characterization processes have been driven by the unique nature of the U. S. program, these processes, which are well-defined and documented, could be used as an initial basis for developing site screening, selection, and characterization programs in other countries. Thus, this paper focuses more on the process elements than the specific details of the U. S. program. (author). 3 refs., 2 tabs., 5 figs.

  8. Electronic structures of B 2p and C 2p levels in boron-doped diamond films studied using soft x-ray absorption and emission spectroscopy

    Science.gov (United States)

    Nakamura, Jin; Kabasawa, Eiki; Yamada, Nobuyoshi; Einaga, Yasuaki; Saito, Daisuke; Isshiki, Hideo; Yugo, Shigemi; Perera, Rupert C. C.

    2004-12-01

    X-ray absorption (XAS) and emission (XES) spectroscopy near B K and C K edges have been performed on metallic ( ˜0.1at.% B, B-diamond) and semiconducting ( ˜0.03at.% B and N, BN-diamond) doped diamond films. Both B K XAS and XES spectra show a metallic partial density of states (PDOS) with the Fermi energy of 185.3eV , and there is no apparent boron-concentration dependence in contrast to the different electric property. In C K XAS spectrum of B-diamond, the impurity state ascribed to boron is clearly observed near the Fermi level. The Fermi energy is found to be almost same with the top of the valence band of nondoped diamond: EV=283.9eV . C K XAS of BN-diamond shows both the B-induced shallow level and N-induced deep and broad levels as the in-gap states, in which the shallow level is in good agreement with the activation energy (Ea=0.37eV) estimated from the temperature dependence of the conductivity; namely, the change in C2p PDOS of impurity-induced metallization is directly observed. The electric property of this diamond is ascribed mainly to the electronic structure of C2p near the Fermi level. The observed XES spectra are compared with the discrete variational Xα ( DVXα ) cluster calculation. The DVXα result supports the strong hybridization between B2p and C2p observed in XAS and XES spectra, and suggests that the small amount of boron (⩽0.1at.%) in diamond occupies the substitutional site rather than interstitial site.

  9. Thermal effects on clay rocks for deep disposal of high-level radioactive waste

    Directory of Open Access Journals (Sweden)

    Chun-Liang Zhang

    2017-06-01

    Full Text Available Thermal effects on the Callovo-Oxfordian and Opalinus clay rocks for hosting high-level radioactive waste were comprehensively investigated with laboratory and in situ experiments under repository relevant conditions: (1 stresses covering the range from the initial lithostatic state to redistributed levels after excavation, (2 hydraulic drained and undrained boundaries, and (3 heating from ambient temperature up to 90 °C–120 °C and a subsequent cooling phase. The laboratory experiments were performed on normal-sized and large hollow cylindrical samples in various respects of thermal expansion and contraction, thermally-induced pore water pressure, temperature influences on deformation and strength, thermal impacts on swelling, fracture sealing and permeability. The laboratory results obtained from the samples are consistent with the in situ observations during heating experiments in the underground research laboratories at Bure and Mont-Terri. Even though the claystones showed significant responses to thermal loading, no negative effects on their favorable barrier properties were observed.

  10. Leach behavior of high-level borosilicate glasses under deep geological environment

    International Nuclear Information System (INIS)

    Kim, Seung Soo; Chun, Kwan Sik; Park, Hyun Soo

    1998-02-01

    This report presents an overview of the activities in high-level radioactive waste glass which is considered as the most practicable form of waste, and also is intended to be used in the disposal of national high-level radioactive waste in future. Leach theory of waste glass and the leach effects of ground water, metal barrier, buffer materials and rocks on the waste glass were reviewed. The leach of waste glass was affected by various factors such as composition, pH and Eh of ground water, temperature, pressure, radiation and humic acid. The crystallization, crack, weathering and the formation of altered phases of waste glass which is expected to occur in real disposal site were reviewed. The results of leaching in laboratory and in-situ were compared. The behaviors of radioactive elements leached from waste glass and the use of basalt glass for the long-term natural analogue of waste glass were also written in this report. The appraisal of durability of borosilicate waste glass as a waste media was performed from the known results of leach test and international in-situ tests were introduced. (author). 134 refs., 15 tabs., 24 figs

  11. Low-cost, high-precision micro-lensed optical fiber providing deep-micrometer to deep-nanometer-level light focusing.

    Science.gov (United States)

    Wen, Sy-Bor; Sundaram, Vijay M; McBride, Daniel; Yang, Yu

    2016-04-15

    A new type of micro-lensed optical fiber through stacking appropriate high-refractive microspheres at designed locations with respect to the cleaved end of an optical fiber is numerically and experimentally demonstrated. This new type of micro-lensed optical fiber can be precisely constructed with low cost and high speed. Deep micrometer-scale and submicrometer-scale far-field light spots can be achieved when the optical fibers are multimode and single mode, respectively. By placing an appropriate teardrop dielectric nanoscale scatterer at the far-field spot of this new type of micro-lensed optical fiber, a deep-nanometer near-field spot can also be generated with high intensity and minimum joule heating, which is valuable in high-speed, high-resolution, and high-power nanoscale detection compared with traditional near-field optical fibers containing a significant portion of metallic material.

  12. EPR spectroscopy of MRI-related Gd(III) complexes: simultaneous analysis of multiple frequency and temperature spectra, including static and transient crystal field effects.

    Science.gov (United States)

    Rast, S; Borel, A; Helm, L; Belorizky, E; Fries, P H; Merbach, A E

    2001-03-21

    For the first time, a very general theoretical method is proposed to interpret the full electron paramagnetic resonance (EPR) spectra at multiple temperatures and frequencies in the important case of S-state metal ions complexed in liquid solution. This method is illustrated by a careful analysis of the measured spectra of two Gd3+ (S = 7/2) complexes. It is shown that the electronic relaxation mechanisms at the origin of the EPR line shape arise from the combined effects of the modulation of the static crystal field by the random Brownian rotation of the complex and of the transient zero-field splitting. A detailed study of the static crystal field mechanism shows that, contrarily to the usual global models involving only second-order terms, the fourth and sixth order terms can play a non-negligible role. The obtained parameters are well interpreted in the framework of the physics of the various underlying relaxation processes. A better understanding of these mechanisms is highly valuable since they partly control the efficiency of paramagnetic metal ions in contrast agents for medical magnetic resonance imaging (MRI).

  13. Dumping of low-level radioactive waste in the deep ocean

    International Nuclear Information System (INIS)

    Templeton, W.L.

    1980-01-01

    Two international agreements relate to the dumping of packaged radioactive waste into the oceans - the Convention on the Prevention of Marine Pollution by Dumping Wastes and Other Matter of 1972 (London Convention) and the Multilateral Consultation and Surveillance Mechanism for Sea Dumping of Radioactive Waste of 1977 under the Organization for Economic Co-operation and Development (OECD). The International Atomic Energy Agency was given the responsibility to define high-level radioactive wastes which are unsuitable for dumping in the oceans and to make recommendations for the dumping of other radioactive wastes. A revised Definition and Recommendations was submitted and accepted by the London Convention. This paper reviews the technical basis for the Definition and describes how it has been applied to the radiological assessment of the only operational dumping site in the North East Atlantic

  14. Characterization of deep energy levels in mercury iodide. Application to nuclear detection

    International Nuclear Information System (INIS)

    Mohammed Brahim, Tayeb.

    1982-07-01

    The last few years have seen an increasing interest in HgI 2 detectors for room temperature gamma and X-ray spectrometry. Performance and effective thickness of these detectors are presently limited by carrier trapping which results in incomplete charge collection. Characterization of the trapping levels has been performed by several photoelectronic methods (photoconductivity, thermal and optical quenching of the photoconductivity, TSC, lifetime measurement). A model is proposed taking into account the results obtained by these techniques and the polarization phenomena observed in nuclear detection in both vapor phase and solution grown crystals. For the latter, polarization can be eliminated or notably reduced by illumination of the positive electrode or by using a MIS positively biased structure [fr

  15. Shell structure and level migrations in zinc studied using collinear laser spectroscopy

    CERN Multimedia

    Tungate, G; De rydt, M A E; Flanagan, K; Rajabali, M M; Hammen, M; Blaum, K; Froemmgen, N E; Kowalska, M; Campbell, P; Neugart, R; Kreim, K D; Stroke, H H; Krieger, A R; Procter, T J

    We propose to perform collinear laser spectroscopy of zinc isotopes to measure the nuclear spin, magnetic dipole moment, electric quadrupole moment and mean-square charge radius. The yield database indicates that measurements of the isotopes $^{60-81}$Zn will be feasible. These measurements will cross the N = 50 shell closure and provide nuclear moments in a region where an inversion of ground-state spin has been identified in neighbouring chains.

  16. Greedy Deep Dictionary Learning

    OpenAIRE

    Tariyal, Snigdha; Majumdar, Angshul; Singh, Richa; Vatsa, Mayank

    2016-01-01

    In this work we propose a new deep learning tool called deep dictionary learning. Multi-level dictionaries are learnt in a greedy fashion, one layer at a time. This requires solving a simple (shallow) dictionary learning problem, the solution to this is well known. We apply the proposed technique on some benchmark deep learning datasets. We compare our results with other deep learning tools like stacked autoencoder and deep belief network; and state of the art supervised dictionary learning t...

  17. Chronic Deep Brain Stimulation of the Hypothalamic Nucleus in Wistar Rats Alters Circulatory Levels of Corticosterone and Proinflammatory Cytokines

    Science.gov (United States)

    Calleja-Castillo, Juan Manuel; De La Cruz-Aguilera, Dora Luz; Manjarrez, Joaquín; Velasco-Velázquez, Marco Antonio; Morales-Espinoza, Gabriel; Moreno-Aguilar, Julia; Hernández, Maria Eugenia; Aguirre-Cruz, Lucinda

    2013-01-01

    Deep brain stimulation (DBS) is a therapeutic option for several diseases, but its effects on HPA axis activity and systemic inflammation are unknown. This study aimed to detect circulatory variations of corticosterone and cytokines levels in Wistar rats, after 21 days of DBS-at the ventrolateral part of the ventromedial hypothalamic nucleus (VMHvl), unilateral cervical vagotomy (UCVgX), or UCVgX plus DBS. We included the respective control (C) and sham (S) groups (n = 6 rats per group). DBS treated rats had higher levels of TNF-α (120%; P < 0.01) and IFN-γ (305%; P < 0.001) but lower corticosterone concentration (48%; P < 0.001) than C and S. UCVgX animals showed increased corticosterone levels (154%; P < 0.001) versus C and S. UCVgX plus DBS increased IL-1β (402%; P < 0.001), IL-6 (160%; P < 0.001), and corsticosterone (178%; P < 0.001 versus 48%; P < 0.001) compared with the C and S groups. Chronic DBS at VMHvl induced a systemic inflammatory response accompanied by a decrease of HPA axis function. UCVgX rats experienced HPA axis hyperactivity as result of vagus nerve injury; however, DBS was unable to block the HPA axis hyperactivity induced by unilateral cervical vagotomy. Further studies are necessary to explore these findings and their clinical implication. PMID:24235973

  18. SPRAYED CLAY TECHNOLOGY FOR THE DEEP REPOSITORY OF HIGH-LEVEL RADIOACTIVE WASTE

    Directory of Open Access Journals (Sweden)

    Lucie Hausmannová

    2012-07-01

    Full Text Available The sealing barrier will play very important role in the Czech disposal concept of high level radioactive waste. It follows Swedish SKB3 design where granitic rock environment will host the repository. Swelling clay based materials as the most favorable for sealing purposes were selected. Such clays must fulfill certain requirements (e.g. on swelling properties, hydraulic conductivity or plasticity and must be stable for thousands of years. Better sealing behavior is obtained when the clay is compacted. Technology of the seal construction can vary according to its target dry density. Very high dry density is needed for buffer (sealing around entire canister with radioactive waste. Less strict requirements are on material backfilling the access galleries. It allows compaction to lower dry density than in case of buffer. One of potential technology for backfilling is to compact clay layers in most of the gallery profile by common compaction machines (rollers etc. and to spray clay into the uppermost part afterwards. The paper introduces the research works on sprayed clay technology performed at the Centre of Experimental Geotechnics of the Czech Technical University in Prague. Large scale in situ demonstration of filling of short drift in the Josef Gallery is also mentioned.

  19. Hydrogeologic modelling in support of a proposed Deep Geologic Repository in Canada for low and intermediate level radioactive waste

    Energy Technology Data Exchange (ETDEWEB)

    Sykes, J.F.; Normani, S.D.; Yin, Y. [Waterloo Univ., ON (Canada). Dept. of Civil and Environmental Engineering; Sykes, E.A.; Jensen, M.R. [Nuclear Waste Management Organization, Toronto, ON (Canada)

    2009-07-01

    Ontario Power Generation (OPG) has proposed the construction of a Deep Geologic Repository (DGR) for low and intermediate level radioactive waste at the Bruce site on the shore of Lake Huron near Tiverton, Ontario. The DGR is to be excavated at a depth of about 680 m within argillaceous limestones of Ordovician age. A saturated regional-scale and site-scale numerical modelling study has been completed in order to evaluate the safety of storing radioactive waste at the site and to better understand the geochemistry and hydrogeology of the formations surrounding the proposed DGR. This paper reported on the regional-scale base-case modelling and analysis of the measured pressure profile in deep boreholes at the DGR site. The numerical modelling study provided a framework to investigate the groundwater flow system as it relates to, and potentially affects, the safety and long-term performance of the DGR. A saturated groundwater flow model was also developed using FRAC3DVS-OPG. The objective of regional-scale groundwater modelling of the Paleozoic sedimentary sequence underlying southwestern Ontario was to provide a basis for the assembly and integration of site-specific geoscientific data and to explain the influence of parameter and scenario uncertainty on predicted long-term geosphere barrier performance. The base-case analysis showed that solute transport in the Ordovician and lower Silurian is diffusion dominant. For the base-case parameters, the estimated mean life expectancy for the proposed DGR is more than 8 million years. The possible presence of a gas phase in the rock between the Cambrian and the Niagaran was not considered in the analyses of this paper. 9 refs., 2 tabs., 10 figs.

  20. The roles of the temperature on the structural and electronic properties of deep-level V{sub As}V{sub Ga} defects in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Deming, E-mail: xautmdm@163.com; Chen, Xi; Qiao, Hongbo; Shi, Wei; Li, Enling

    2015-07-15

    Highlights: • The energy gap of the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} is 0.82 eV. • Proves that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. • Proves that EL2 and EL6 deep-level defects can transform into each other. • Temperature has an important effect on the microstructure of deep-level defects. - Abstract: The roles of temperature on the structural and electronic properties of V{sub As}V{sub Ga} defects in gallium arsenide have been studied by using ab-initio molecular dynamic (MD) simulation. Our calculated results show that the relatively stable quaternary complex defect of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} can be converted from the V{sub As}V{sub Ga} complex clusters defect between 300 K and 1173 K; however, from 1173 K to 1373 K, the decomposition of the complex defect Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} occurs, turning into a deep-level V{sub As}V{sub Ga} cluster defect and an isolated As{sub Ga} antisite defect, and relevant defect of Ga{sub As} is recovered. The properties of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} defect has been studied by first-principles calculations based on hybrid density functional theory. Our calculated results show that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. Thus, we reveal that the temperature has an important effect on the microstructure of deep-level defects and defect energy level in gallium arsenide that EL2 and EL6 deep-level defects have a certain correlation, which means they could transform into each other. Controlling temperature in the growth process of GaAs could change the microstructure of deep-level defects and defect energy levels in gallium arsenide materials, whereby affects the electron transport properties of materials.

  1. Alternative difference analysis scheme combining R-space EXAFS fit with global optimization XANES fit for X-ray transient absorption spectroscopy.

    Science.gov (United States)

    Zhan, Fei; Tao, Ye; Zhao, Haifeng

    2017-07-01

    Time-resolved X-ray absorption spectroscopy (TR-XAS), based on the laser-pump/X-ray-probe method, is powerful in capturing the change of the geometrical and electronic structure of the absorbing atom upon excitation. TR-XAS data analysis is generally performed on the laser-on minus laser-off difference spectrum. Here, a new analysis scheme is presented for the TR-XAS difference fitting in both the extended X-ray absorption fine-structure (EXAFS) and the X-ray absorption near-edge structure (XANES) regions. R-space EXAFS difference fitting could quickly provide the main quantitative structure change of the first shell. The XANES fitting part introduces a global non-derivative optimization algorithm and optimizes the local structure change in a flexible way where both the core XAS calculation package and the search method in the fitting shell are changeable. The scheme was applied to the TR-XAS difference analysis of Fe(phen) 3 spin crossover complex and yielded reliable distance change and excitation population.

  2. Wavenumber selection based analysis in Raman spectroscopy improves skin cancer diagnostic specificity at high sensitivity levels (Conference Presentation)

    Science.gov (United States)

    Zhao, Jianhua; Zeng, Haishan; Kalia, Sunil; Lui, Harvey

    2017-02-01

    Background: Raman spectroscopy is a non-invasive optical technique which can measure molecular vibrational modes within tissue. A large-scale clinical study (n = 518) has demonstrated that real-time Raman spectroscopy could distinguish malignant from benign skin lesions with good diagnostic accuracy; this was validated by a follow-up independent study (n = 127). Objective: Most of the previous diagnostic algorithms have typically been based on analyzing the full band of the Raman spectra, either in the fingerprint or high wavenumber regions. Our objective in this presentation is to explore wavenumber selection based analysis in Raman spectroscopy for skin cancer diagnosis. Methods: A wavenumber selection algorithm was implemented using variably-sized wavenumber windows, which were determined by the correlation coefficient between wavenumbers. Wavenumber windows were chosen based on accumulated frequency from leave-one-out cross-validated stepwise regression or least and shrinkage selection operator (LASSO). The diagnostic algorithms were then generated from the selected wavenumber windows using multivariate statistical analyses, including principal component and general discriminant analysis (PC-GDA) and partial least squares (PLS). A total cohort of 645 confirmed lesions from 573 patients encompassing skin cancers, precancers and benign skin lesions were included. Lesion measurements were divided into training cohort (n = 518) and testing cohort (n = 127) according to the measurement time. Result: The area under the receiver operating characteristic curve (ROC) improved from 0.861-0.891 to 0.891-0.911 and the diagnostic specificity for sensitivity levels of 0.99-0.90 increased respectively from 0.17-0.65 to 0.20-0.75 by selecting specific wavenumber windows for analysis. Conclusion: Wavenumber selection based analysis in Raman spectroscopy improves skin cancer diagnostic specificity at high sensitivity levels.

  3. Thermal evolution and exhumation of deep-level batholithic exposures, southernmost Sierra Nevada, California

    Science.gov (United States)

    Saleeby, J.; Farley, K.A.; Kistler, R.W.; Fleck, R.J.

    2007-01-01

    The Tehachapi complex lies at the southern end of the Sierra Nevada batholith adjacent to the Neogene-Quaternary Garlock fault. The complex is composed principally of high-pressure (8-10 kbar) Cretaceous batholithic rocks, and it represents the deepest exposed levels of a continuous oblique crustal section through the southern Sierra Nevada batholith. Over the southern ???100 km of this section, structural/petrologic continuity and geochronological data indicate that ???35 km of felsic to intermediate-composition crust was generated by copious arc magmatism primarily between 105 and 99 Ma. In the Tehachapi complex, these batholithic rocks intrude and are bounded to the west by similar-composition gneissic-textured high-pressure batholithic rocks emplaced at ca. 115-110 Ma. This lower crustal complex is bounded below by a regional thrust system, which in Late Cretaceous time tectonically eroded the underlying mantle lithosphere, and in series displaced and underplated the Rand Schist subduction assemblage by low-angle slip from the outboard Franciscan trench. Geophysical and mantle xenolith studies indicate that the remnants of this shallow subduction thrust descend northward through the crust and into the mantle, leaving the mantle lithosphere intact beneath the greater Sierra Nevada batholith. This north-dipping regional structure records an inflection in the Farallon plate, which was segmented into a shallow subduc-tion trajectory to the south and a normal steeper trajectory to the north. We combine new and published data from a broad spectrum of thermochronom-eters that together form a coherent data array constraining the thermal evolution of the complex. Integration of these data with published thermobarometric and petro-genetic data also constrains the tectonically driven decompression and exhumation history of the complex. The timing of arc magmatic construction of the complex, as denoted above, is resolved by a large body of U/Pb zircon ages. High

  4. Deep Uncertainties in Sea-Level Rise and Storm Surge Projections: Implications for Coastal Flood Risk Management.

    Science.gov (United States)

    Oddo, Perry C; Lee, Ben S; Garner, Gregory G; Srikrishnan, Vivek; Reed, Patrick M; Forest, Chris E; Keller, Klaus

    2017-09-05

    Sea levels are rising in many areas around the world, posing risks to coastal communities and infrastructures. Strategies for managing these flood risks present decision challenges that require a combination of geophysical, economic, and infrastructure models. Previous studies have broken important new ground on the considerable tensions between the costs of upgrading infrastructure and the damages that could result from extreme flood events. However, many risk-based adaptation strategies remain silent on certain potentially important uncertainties, as well as the tradeoffs between competing objectives. Here, we implement and improve on a classic decision-analytical model (Van Dantzig 1956) to: (i) capture tradeoffs across conflicting stakeholder objectives, (ii) demonstrate the consequences of structural uncertainties in the sea-level rise and storm surge models, and (iii) identify the parametric uncertainties that most strongly influence each objective using global sensitivity analysis. We find that the flood adaptation model produces potentially myopic solutions when formulated using traditional mean-centric decision theory. Moving from a single-objective problem formulation to one with multiobjective tradeoffs dramatically expands the decision space, and highlights the need for compromise solutions to address stakeholder preferences. We find deep structural uncertainties that have large effects on the model outcome, with the storm surge parameters accounting for the greatest impacts. Global sensitivity analysis effectively identifies important parameter interactions that local methods overlook, and that could have critical implications for flood adaptation strategies. © 2017 Society for Risk Analysis.

  5. The level of ethylene biomarker in the renal failure of elderly patients analyzed by photoacoustic spectroscopy

    Science.gov (United States)

    Popa, C.; Patachia, M.; Banita, S.; Matei, C.; Bratu, A. M.; Dumitras, D. C.

    2013-12-01

    In recent years there has been a large increase in the areas related to developments in the prevention of diseases, especially in explaining the role of oxidative stress. Lipid peroxidation and oxidative stress contributes to morbidity in hemodialysis (HD) patients. It is therefore relevant to analyze the impact of oxidative stress and its related species (ethylene) immediately after dialysis treatment in order to prevent trauma in the renal failure of elderly patients. In this paper we describe recent progress in laser photoacoustic spectroscopy detection of ethylene in renal failure patients. We have found that HD treatment increases ethylene concentration in the exhaled breath of elderly patients and may intensify oxidative stress.

  6. Nuclear Level Densities for Modeling Nuclear Reactions: An Efficient Approach Using Statistical Spectroscopy

    International Nuclear Information System (INIS)

    Calvin W. Johnson

    2005-01-01

    The general goal of the project is to develop and implement computer codes and input files to compute nuclear densities of state. Such densities are important input into calculations of statistical neutron capture, and are difficult to access experimentally. In particular, we will focus on calculating densities for nuclides in the mass range A ∼ 50-100. We use statistical spectroscopy, a moments method based upon a microscopic framework, the interacting shell model. Second year goals and milestones: Develop two or three competing interactions (based upon surface-delta, Gogny, and NN-scattering) suitable for application to nuclei up to A = 100. Begin calculations for nuclides with A = 50-70

  7. Gamma-ray Spectroscopy of Nano-second Isomers in Neutron-rich Ni Region Produced by Deep-inelastic Collisions

    Science.gov (United States)

    Ishii, Tetsuro; Asai, Masato; Kleinheinz, Peter; Matsuda, Makoto; Ichikawa, Shinichi; Makishima, Akiyasu; Ogawa, Masao

    2001-10-01

    We have been studying nuclear structure of neutron-rich nuclei produced by heavy-ion deep-inelastic collisions at the JAERI Tandem Booster facility. In our method using an `isomer-scope', γ-rays only from isomers with T_1/2 > 1ns are measured by shielding Ge detectors from prompt γ rays emitted at the target position. Atomic numbers of isomers can be also identified by detecting projectile-like fragments with Si Δ E-E detectors. Until now, we have found several new isomers in neutron-rich Ni region using about 8 MeV/nucleon ^70Zn, ^76Ge and ^82Se beams and a ^198Pt target of 4.3 mg/cm^2 thickness. In the doubly magic ^68_28Ni_40, the (ν g_9/2^2 ν p_1/2-2)8^+ isomer with T_1/2=23(1) ns was found. In its neighbor nuclei ^69,71Cu, the 19/2^- isomers were found and the energy levels decaying from the isomers can be calculated very accurately by a parameter-free shell model calculation using experimental energy levels as two-body residual interactions. I will also briefly discuss nano-second isomers in ^32,33Si and ^34P produced by 9 MeV/nucleon ^37Cl beams.

  8. RNA deep sequencing reveals novel candidate genes and polymorphisms in boar testis and liver tissues with divergent androstenone levels.

    Directory of Open Access Journals (Sweden)

    Asep Gunawan

    Full Text Available Boar taint is an unpleasant smell and taste of pork meat derived from some entire male pigs. The main causes of boar taint are the two compounds androstenone (5α-androst-16-en-3-one and skatole (3-methylindole. It is crucial to understand the genetic mechanism of boar taint to select pigs for lower androstenone levels and thus reduce boar taint. The aim of the present study was to investigate transcriptome differences in boar testis and liver tissues with divergent androstenone levels using RNA deep sequencing (RNA-Seq. The total number of reads produced for each testis and liver sample ranged from 13,221,550 to 33,206,723 and 12,755,487 to 46,050,468, respectively. In testis samples 46 genes were differentially regulated whereas 25 genes showed differential expression in the liver. The fold change values ranged from -4.68 to 2.90 in testis samples and -2.86 to 3.89 in liver samples. Differentially regulated genes in high androstenone testis and liver samples were enriched in metabolic processes such as lipid metabolism, small molecule biochemistry and molecular transport. This study provides evidence for transcriptome profile and gene polymorphisms of boars with divergent androstenone level using RNA-Seq technology. Digital gene expression analysis identified candidate genes in flavin monooxygenease family, cytochrome P450 family and hydroxysteroid dehydrogenase family. Moreover, polymorphism and association analysis revealed mutation in IRG6, MX1, IFIT2, CYP7A1, FMO5 and KRT18 genes could be potential candidate markers for androstenone levels in boars. Further studies are required for proving the role of candidate genes to be used in genomic selection against boar taint in pig breeding programs.

  9. A review of the predictive modelling and data requirements for the long-term safety assessment of the deep disposal of low and intermediate level radioactive wastes

    International Nuclear Information System (INIS)

    Broyd, T.W.

    1988-06-01

    This report considers the Her Majesty's Inspectorate of Pollution research and modelling requirements for a robust post-closure radiological risk assessment methodology applicable to the deep disposal of Low-Level Wastes and Intermediate-Level Wastes. Two disposal concepts have been envisaged: horizontal tunnels or galleries in a low permeability stratum of a sedimentary sequence located inland; vertical boreholes or shafts up to 15m diameter lined with concrete and of the order 500m to 1000m deep sunk into the seabed within territorial coastal waters of the United Kingdom. (author)

  10. Ultrafast photo-initiated molecular quantum dynamics in the DNA dinucleotide d(ApG) revealed by broadband transient absorption spectroscopy.

    Science.gov (United States)

    Stuhldreier, Mayra C; Temps, Friedrich

    2013-01-01

    The ultrafast photo-initiated quantum dynamics of the adenine-guanine dinucleotide d(ApG) in aqueous solution (pH 7) has been studied by femtosecond time-resolved spectroscopy after excitation at lambda = 260 nm. The results reveal a hierarchy of processes on time scales from tau 100 ps. Characteristic spectro-temporal signatures are observed indicating the transformation of the molecules in the electronic relaxation from the photo-excited state to a long-lived exciplex. In particular, broadband UV/VIS excited-state absorption (ESA) measurements detected a distinctive absorption by the excited dinucleotide around lambda = 335 nm, approximately 0.5 eV to the blue compared to the maximum of the broad and unstructured ESA spectrum after excitation of an equimolar mixture of the mononucleotides dAMP and dGMP. A similar feature has been identified as signature of the excimer in the dynamics of the adenine dinucleotide d(ApA). The lifetime of the d(ApG) exciplex was found to be tau = 124 +/- 4 ps both from the ESA decay time and from the ground-state recovery time, far longer than the sub-picosecond lifetimes of excited dAMP or dGMP. Fluorescence-time profiles measured by the up-conversion technique indicate that the exciplex state is reached around approximately 6 ps after excitation. Very weak residual fluorescence at longer times red-shifted to the emission from the photo-excited state shows that the exciplex is almost optically dark, but still has enough oscillator strength to give rise to the dual fluorescence of the dinucleotide in the static fluorescence spectrum.

  11. Transient hardened power FETs

    International Nuclear Information System (INIS)

    Dawes, W.R. Jr.; Fischer, T.A.; Huang, C.C.C.; Meyer, W.J.; Smith, C.S.; Blanchard, R.A.; Fortier, T.J.

    1986-01-01

    N-channel power FETs offer significant advantages in power conditioning circuits. Similiarily to all MOS technologies, power FET devices are vulnerable to ionizing radiation, and are particularily susceptible to burn-out in high dose rate irradiations (>1E10 rads(Si)/sec.), which precludes their use in many military environments. This paper will summarize the physical mechanisms responsible for burn-out, and discuss various fabrication techniques designed to improve the transient hardness of power FETs. Power FET devices were fabricated with several of these techniques, and data will be presented which demonstrates that transient hardness levels in excess of 1E12 rads(Si)/sec. are easily achievable

  12. A model for mild traumatic brain injury that induces limited transient memory impairment and increased levels of axon related serum biomarkers

    Directory of Open Access Journals (Sweden)

    Elham eRostami

    2012-07-01

    Full Text Available Mild traumatic brain injury (mTBI is one of the most common neuronal insults and can lead to long-term disabilities. mTBI occurs when the head is exposed to a rapid acceleration-deceleration movement triggering axonal injuries. Our limited understanding of the underlying pathological changes makes it difficult to predict the outcome of mTBI. In this study we used a scalable rat model for rotational acceleration TBI, previously characterized for the threshold of axonal pathology. We have analyzed whether a TBI just above the defined threshold would induce any detectable behavioral changes and/or changes in serum biomarkers. The effect of injury on sensory motor functions, memory and anxiety were assessed by beam walking, radial arms maze and elevated plus maze at 3 to 7 days following TBI. The only behavioral deficits found were transient impairments in working and reference memory. Blood serum was analyzed at 1, 3 and 14 days after injury for changes in selected protein biomarkers. Serum levels of neurofilament heavy chain (NF-H and Tau, as well as S100B and myelin basic protein (MBP showed significant increases in the injured animals at all time points. No signs of macroscopic injuries such as intracerebral hematomas or contusions were found. Amyloid precursor protein (APP immunostaining indicated axonal injuries at all time points analyzed. In summary, this model mimics some of the key symptoms of mTBI, such as transient memory impairment, which is paralleled by an increase in serum biomarkers. Our findings suggest that serum biomarkers may be used to detect mTBI. The model provides a suitable foundation for further investigation of the underlying pathology of mTBI.

  13. Motor current signature analysis for gearbox condition monitoring under transient speeds using wavelet analysis and dual-level time synchronous averaging

    Science.gov (United States)

    Bravo-Imaz, Inaki; Davari Ardakani, Hossein; Liu, Zongchang; García-Arribas, Alfredo; Arnaiz, Aitor; Lee, Jay

    2017-09-01

    This paper focuses on analyzing motor current signature for fault diagnosis of gearboxes operating under transient speed regimes. Two different strategies are evaluated, extensively tested and compared to analyze the motor current signature in order to implement a condition monitoring system for gearboxes in industrial machinery. A specially designed test bench is used, thoroughly monitored to fully characterize the experiments, in which gears in different health status are tested. The measured signals are analyzed using discrete wavelet decomposition, in different decomposition levels using a range of mother wavelets. Moreover, a dual-level time synchronous averaging analysis is performed on the same signal to compare the performance of the two methods. From both analyses, the relevant features of the signals are extracted and cataloged using a self-organizing map, which allows for an easy detection and classification of the diverse health states of the gears. The results demonstrate the effectiveness of both methods for diagnosing gearbox faults. A slightly better performance was observed for dual-level time synchronous averaging method. Based on the obtained results, the proposed methods can used as effective and reliable condition monitoring procedures for gearbox condition monitoring using only motor current signature.

  14. Siting, design and construction of a deep geological repository for the disposal of high level and alpha bearing wastes

    International Nuclear Information System (INIS)

    1990-06-01

    The main objective of this document is to summarize the basic principles and approaches to siting, design and construction of a deep geological repository for disposal of high level and alpha bearing radioactive wastes, as commonly agreed upon by Member States. This report is addressed to decision makers and technical managers as well as to specialists planning for siting, design and construction of geological repositories for disposal of high level and alpha bearing wastes. This document is intended to provide Member States of the IAEA with a summary outline for the responsible implementing organizations to use for siting, designing and constructing confinement systems for high level and alpha bearing radioactive waste in accordance with the protection objectives set by national regulating authorities or derived from safety fundamentals and standards of the IAEA. The protection objectives will be achieved by the isolation of the radionuclides from the environment by a repository system, which consists of a series of man made and natural safety barriers. Engineered barriers are used to enhance natural geological containment in a variety of ways. They must complement the natural barriers to provide adequate safety and necessary redundancy to the barrier system to ensure that safety standards are met. Because of the long timescales involved and the important role of the natural barrier formed by the host rock, the site selection process is a key activity in the repository design and development programme. The choice of the site, the investigation of its geological setting, the exploration of the regional hydrogeological setting and the primary underground excavations are all considered to be part of the siting process. 16 refs

  15. Characterization of the Transient Response of the ILS with One Module Installed to Heatup Changes in Power Level and Cooldown

    International Nuclear Information System (INIS)

    K. G. Condie; C. M. Stoots; J. E. O'Brien; J. S. Herring

    2007-01-01

    This report provides documentation of the initial startup and testing of the first electrolysis module in the Idaho National Laboratory (INL) High Temperature Steam Electrolysis Integrated Laboratory Scale (ILS) facility. Initial shakedown testing of the INL ILS experimental facility commenced on August 22, 2007. This fulfilled a DOE Level 2 milestone. Heatup of the first ILS module started at approximately 4:10 PM on September 24, 2007. Initial module testing continued for 420 hours. The test average H2 production rate was approximately 1.3 Nm3/hr (0.116 kg H2/hr), with a peak measured value of over 2 Nm3/hr (0.179 kg H2/hr). Significant module performance degradation was observed over the first 250 hours, after which no further degradation was noted for the remainder of the test. Once all test objectives had been successfully met, the test was terminated in a controlled fashion. Discussion is included concerning several modifications that will be incorporated into the facility components to improve reliability and ease of operation for future long term testing

  16. A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Pérez, E.; Dueñas, S.; Castán, H.; García, H.; Bailón, L. [Dept. de Electricidad y Electrónica, Universidad de Valladolid, Paseo de Belén 15, 47011 Valladolid (Spain); Montero, D.; García-Hernansanz, R.; García-Hemme, E.; González-Díaz, G. [Dept. de Física Aplicada III (Electricidad y Electrónica), Univ. Complutense de Madrid, 28040 Madrid (Spain); CEI Campus Moncloa, UCM-UPM, 28040 Madrid (Spain); Olea, J. [CEI Campus Moncloa, UCM-UPM, 28040 Madrid (Spain); Instituto de Energía Solar, E.T.S.I. de Telecomunicación, Univ. Politécnica de Madrid, 28040 Madrid (Spain)

    2015-12-28

    The energy levels created in supersaturated n-type silicon substrates with titanium implantation in the attempt to create an intermediate band in their band-gap are studied in detail. Two titanium ion implantation doses (10{sup 13 }cm{sup -2} and 10{sup 14 }cm{sup -2}) are studied in this work by conductance transient technique and admittance spectroscopy. Conductance transients have been measured at temperatures of around 100 K. The particular shape of these transients is due to the formation of energy barriers in the conduction band, as a consequence of the band-gap narrowing induced by the high titanium concentration. Moreover, stationary admittance spectroscopy results suggest the existence of different energy level configuration, depending on the local titanium concentration. A continuum energy level band is formed when titanium concentration is over the Mott limit. On the other hand, when titanium concentration is lower than the Mott limit, but much higher than the donor impurity density, a quasi-continuum energy level distribution appears. Finally, a single deep center appears for low titanium concentration. At the n-type substrate, the experimental results obtained by means of thermal admittance spectroscopy at high reverse bias reveal the presence of single levels located at around E{sub c}-425 and E{sub c}-275 meV for implantation doses of 10{sup 13 }cm{sup −2} and 10{sup 14 }cm{sup −2}, respectively. At low reverse bias voltage, quasi-continuously distributed energy levels between the minimum of the conduction bands, E{sub c} and E{sub c}-450 meV, are obtained for both doses. Conductance transients detected at low temperatures reveal that the high impurity concentration induces a band gap narrowing which leads to the formation of a barrier in the conduction band. Besides, the relationship between the activation energy and the capture cross section values of all the energy levels fits very well to the Meyer-Neldel rule. As it is known

  17. DeepPy: Pythonic deep learning

    DEFF Research Database (Denmark)

    Larsen, Anders Boesen Lindbo

    This technical report introduces DeepPy – a deep learning framework built on top of NumPy with GPU acceleration. DeepPy bridges the gap between highperformance neural networks and the ease of development from Python/NumPy. Users with a background in scientific computing in Python will quickly...... be able to understand and change the DeepPy codebase as it is mainly implemented using high-level NumPy primitives. Moreover, DeepPy supports complex network architectures by letting the user compose mathematical expressions as directed graphs. The latest version is available at http...

  18. Model-based development of low-level control strategies for transient operation of solid oxide fuel cell systems

    Science.gov (United States)

    Sorrentino, Marco; Pianese, Cesare

    The exploitation of an SOFC-system model to define and test control and energy management strategies is presented. Such a work is motivated by the increasing interest paid to SOFC technology by industries and governments due to its highly appealing potentialities in terms of energy savings, fuel flexibility, cogeneration, low-pollution and low-noise operation. The core part of the model is the SOFC stack, surrounded by a number of auxiliary devices, i.e. air compressor, regulating pressure valves, heat exchangers, pre-reformer and post-burner. Due to the slow thermal dynamics of SOFCs, a set of three lumped-capacity models describes the dynamic response of fuel cell and heat exchangers to any operation change. The dynamic model was used to develop low-level control strategies aimed at guaranteeing targeted performance while keeping stack temperature derivative within safe limits to reduce stack degradation due to thermal stresses. Control strategies for both cold-start and warmed-up operations were implemented by combining feedforward and feedback approaches. Particularly, the main cold-start control action relies on the precise regulation of methane flow towards anode and post-burner via by-pass valves; this strategy is combined with a cathode air-flow adjustment to have a tight control of both stack temperature gradient and warm-up time. Results are presented to show the potentialities of the proposed model-based approach to: (i) serve as a support to control strategies development and (ii) solve the trade-off between fast SOFC cold-start and avoidance of thermal-stress caused damages.

  19. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z.; Cardwell, D.; Sasikumar, A.; Arehart, A. R.; Ringel, S. A., E-mail: ringel.5@osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Kyle, E. C. H.; Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106-5050 (United States); Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D. [Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)

    2016-04-28

    The impact of proton irradiation on the threshold voltage (V{sub T}) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V{sub T} was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 10{sup 14} cm{sup −2}. Silvaco Atlas simulations of V{sub T} shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V{sub T} dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed V{sub T} shifts. The proton irradiation induced V{sub T} shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

  20. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

    Science.gov (United States)

    Zhang, Z.; Cardwell, D.; Sasikumar, A.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Arehart, A. R.; Ringel, S. A.

    2016-04-01

    The impact of proton irradiation on the threshold voltage (VT) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of VT was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 1014 cm-2. Silvaco Atlas simulations of VT shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different VT dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed VT shifts. The proton irradiation induced VT shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.