WorldWideScience

Sample records for deep defect levels

  1. Deep-level defects in semiconductors: studies by magnetic resonance

    International Nuclear Information System (INIS)

    Ammerlaan, C.A.J.

    1983-01-01

    This work is divided into two parts. In the first one, the following topics are discussed: paramagnetic centers in semiconductors, principles of magnetic resonance, spin-Hamiltonian, g-tensor, hyperfine interaction, magnetic resonance spectrometer. In the second part it is dicussed defects studied by magnetic resonance including vacancy and divacancy in silicon, iron in silicon, nitrogen in diamond and antisite defects in III-V compounds. (A.C.A.S.) [pt

  2. Point defects in gallium arsenide characterized by positron annihilation spectroscopy and deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Mih, R.; Gronsky, R.; Sterne, P.A.

    1995-01-01

    Positron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. The authors present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot-Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data

  3. Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

    Science.gov (United States)

    Peaker, A. R.; Markevich, V. P.; Coutinho, J.

    2018-04-01

    The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for characterizing deep-level defects in semiconductors and present some of the early work on which the principles of today's methodology are based. We outline ab-initio calculations of defect properties and give examples of how density functional theory in conjunction with formation energy and marker methods can be used to guide the interpretation of experimental results. We review recombination, generation, and trapping of charge carriers associated with defects. We consider thermally driven emission and capture and describe the techniques of Deep Level Transient Spectroscopy (DLTS), high resolution Laplace DLTS, admittance spectroscopy, and scanning DLTS. For the study of minority carrier related processes and wide gap materials, we consider Minority Carrier Transient Spectroscopy (MCTS), Optical DLTS, and deep level optical transient spectroscopy together with some of their many variants. Capacitance, current, and conductance measurements enable carrier exchange processes associated with the defects to be detected. We explain how these methods are used in order to understand the behaviour of point defects and the determination of charge states and negative-U (Hubbard correlation energy) behaviour. We provide, or reference, examples from a wide range of materials including Si, SiGe, GaAs, GaP, GaN, InGaN, InAlN, and ZnO.

  4. Irradiation induced defects containing oxygen atoms in germanium crystal as studied by deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Fukuoka, Noboru; Kambe, Yoshiyuki; Saito, Haruo; Matsuda, Koji.

    1984-05-01

    Deep level transient spectroscopy was applied to the electron trapping levels which are associated with the irradiation induced lattice defects in germanium crystals. The germanium crystals used in the study were doped with oxygen, antimony or arsenic and the defects were formed by electron irradiation of 1.5MeV or 10MeV. The nature of so called ''thermal defect'' formed by heat treatment at about 670K was also studied. The trapping levels at Esub(c)-0.13eV, Esub(c)-0.25eV and Esub(c)-0.29eV were found to be associated with defects containing oxygen atoms. From the experimental results the Esub(c)-0.25eV level was attributed to the germanium A-center (interstitial oxygen atom-vacancy pair). Another defect associated with the 715cm -1 infrared absorption band was found to have a trapping level at the same position at Esub(c)-0.25eV. The Esub(c)-0.23eV and Esub(c)-0.1eV levels were revealed to be associated with thermal donors formed by heat treatment at about 670K. Additional two peaks (levels) were observed in the DLTS spectrum. The annealing behavior of the levels suggests that the thermal donors originate from not a single type but several types of defects. (author)

  5. High resolution deep level transient spectroscopy and process-induced defects in silicon

    International Nuclear Information System (INIS)

    Evans-Freeman, J.H.; Emiroglu, D.; Vernon-Parry, K.D.

    2004-01-01

    High resolution, or Laplace, deep level transient spectroscopy (LDLTS) enables the identification of very closely spaced energetic levels in a semiconductor bandgap. DLTS may resolve peaks with a separation of tens of electron volts, but LDLTS can resolve defect energy separations as low as a few MeV. In this paper, we present results from LDLTS applied to ion implantation-induced defects in silicon, with particular emphasis on characterisation of end-of-range interstitial type defects. Silicon was implanted with a variety of ions from mass 28 to 166. A combination of LDLTS and direct capture cross-section measurements was employed to show that electrically active small extended defects were present in the as-implanted samples. Larger dislocations were then generated in Si by oxygenation to act as a control sample. These stacking faults had typical lengths of microns, and their electrical activity was subsequently characterised by LDLTS. This was to establish the sensitivity of LDLTS to defects whose carrier capture is characterised by a non-exponential filling process and an evolving band structure as carrier capture proceeds. The LDLTS spectra show several components in capacitance transients originating from both the end-of-range defects, and the stacking faults, and also clearly show that the carrier emission rates reduce as these extended defects fill with carriers. The end-of-range defects and the stacking faults are shown to have the same electrical behaviour

  6. Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se{sub 2} based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Lee, D.W.; Seol, M.S.; Kwak, D.W.; Oh, J.S. [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of); Jeong, J.H. [Photo-electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics, Dongguk University, Seoul 100-715 (Korea, Republic of)

    2012-08-01

    Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se{sub 2} (CIGS) based thin films for solar cell were investigated. CIGS films with a thickness of 3 {mu}m were grown on a soda-lime glass substrate by a co-evaporation method, and then were implanted with protons. To study deep level defects in the proton implanted CIGS films, deep level transient spectroscopy measurements on the CIGS-based solar cells were carried out, these measurements found 6 traps (including 3 hole traps and 3 electron traps). In the proton implanted CIGS films, the deep level defects, which are attributed to the recombination centers of the CIGS solar cell, were significantly reduced in intensity, while a deep level defect was generated around 0.28 eV above the valence band maximum. Therefore, we suggest that most deep level defects in CIGS films can be controlled by hydrogen effects. - Highlights: Black-Right-Pointing-Pointer Proton implanted Cu(In,Ga)Se{sub 2} thin film and solar cell are prepared. Black-Right-Pointing-Pointer Deep level defects of Cu(In,Ga)Se{sub 2} thin film and solar cell are investigated. Black-Right-Pointing-Pointer Hydrogenation using proton implantation and H{sub 2} annealing reduces deep level defects. Black-Right-Pointing-Pointer Hydrogenation could enhance electrical properties and efficiency of solar cells.

  7. Radiation induced deep level defects in bipolar junction transistors under various bias conditions

    International Nuclear Information System (INIS)

    Liu, Chaoming; Yang, Jianqun; Li, Xingji; Ma, Guoliang; Xiao, Liyi; Bollmann, Joachim

    2015-01-01

    Bipolar junction transistor (BJT) is sensitive to ionization and displacement radiation effects in space. In this paper, 35 MeV Si ions were used as irradiation source to research the radiation damage on NPN and PNP bipolar transistors. The changing of electrical parameters of transistors was in situ measured with increasing irradiation fluence of 35 MeV Si ions. Using deep level transient spectroscopy (DLTS), defects in the bipolar junction transistors under various bias conditions are measured after irradiation. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions can affect the concentration of deep level defects, and the radiation damage induced by heavy ions.

  8. Anomalous behaviors of E1/E2 deep level defects in 6H silicon carbide

    International Nuclear Information System (INIS)

    Chen, X.D.; Ling, C.C.; Gong, M.; Fung, S.; Beling, C.D.; Brauer, G.; Anwand, W.; Skorupa, W.

    2005-01-01

    Deep level defects E 1 /E 2 were observed in He-implanted, 0.3 and 1.7 MeV electron-irradiated n-type 6H-SiC. Similar to others' results, the behaviors of E 1 and E 2 (like the peak intensity ratio, the annealing behaviors or the introduction rates) often varied from sample to sample. This anomalous result is not expected of E 1 /E 2 being usually considered arising from the same defect located at the cubic and hexagonal sites respectively. The present study shows that this anomaly is due to another DLTS peak overlapping with the E 1 /E 2 . The activation energy and the capture cross section of this defect are E C -0.31 eV and σ∼8x10 -14 cm 2 , respectively

  9. Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

    International Nuclear Information System (INIS)

    Kwak, D.W.; Lee, D.W.; Oh, J.S.; Lee, Y.H.; Cho, H.Y.

    2012-01-01

    SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H + /He + ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10 −17 cm 2 , two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10 −14 cm 2 and 0.96 × 10 −15 cm 2 , respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H + ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers. - Highlights: ► We have fabricated low-defective SiGe-on-Insulator (SGOI) with implantation method. ► H + and He + -ions are used for ion-implantation method. ► We have investigated the deep level defects of SGOI layers. ► Ge condensation method using H + ion implantation could reduce extended defects. ► They could enhance electrical properties.

  10. Behavior of deep level defects on voltage-induced stress of Cu(In,Ga)Se{sub 2} solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lee, D.W.; Cho, S.E. [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of); Jeong, J.H. [Solar Cell Center, Korea Institute of Science and Technology, Seoul (Korea, Republic of); Cho, H.Y., E-mail: hycho@dongguk.edu [Department of Physics and Semiconductor Science, Dongguk University, Seoul (Korea, Republic of)

    2015-05-01

    The behavior of deep level defects by a voltage-induced stress for CuInGaSe{sub 2} (CIGS) solar cells has been investigated. CIGS solar cells were used with standard structures which are Al-doped ZnO/i-ZnO/CdS/CIGSe{sub 2}/Mo on soda lime glass, and that resulted in conversion efficiencies as high as 16%. The samples with the same structure were isothermally stressed at 100 °C under the reverse voltages. The voltage-induced stressing in CIGS samples causes a decrease in the carrier density and conversion efficiency. To investigate the behavior of deep level defects in the stressed CIGS cells, photo-induced current transient spectroscopy was utilized, and normally 3 deep level defects (including 2 hole traps and 1 electron trap) were found to be located at 0.18 eV and 0.29 eV above the valence band maximum (and 0.36 eV below the conduction band). In voltage-induced cells, especially, it was found that the decrease of the hole carrier density could be responsible for the increase of the 0.29 eV defect, which is known to be observed in less efficient CIGS solar cells. And the carrier density and the defects are reversible at least to a large extent by resting at room-temperature without the bias voltage. From optical capture kinetics in photo-induced current transient spectroscopy measurement, the types of defects could be distinguished into the isolated point defect and the extended defect. In this work, it is suggested that the increase of the 0.29 eV defect by voltage-induced stress could be due to electrical activation accompanied by a loss of positive ion species and the activated defect gives rise to reduction of the carrier density. - Highlights: • We investigated behavior of deep level defects by voltage-induced stress. • Defect generation could affect the decrease of the conversion efficiency of cells. • Defect generation could be electrically activated by a loss of positive ion species. • Type of defects could be studied with models of point defects

  11. Identities of the deep level defects E1/E2 in 6H silicon carbide

    International Nuclear Information System (INIS)

    Ling, C.C.; Chen, X.D.; Beling, C.D.; Fung, S.; Lam, T.W.; Lam, C.H.; Gong, M.; Weng, H.M.; Hang, D.S.

    2004-01-01

    E 1 /E 2 (E C -0.36/0.44 eV) are deep level donors generally found in ion-implanted, electron and neutron irradiated n-type 6H-SiC materials. Their configurations are controversial and have been related to a negatively charged carbon vacancy, a divacancy or a V Si -complex. With positron lifetime technique, we have identified V Si and V C V Si in the Lely grown n-type 6H-SiC sample, with V Si annealed out at 650 C. Concentration of V C V Si persists at 1400 C annealing and significantly decreased after the 1600 C annealing. Considering the deep level transient spectroscopic (DLTS) results on the neutron irradiated n-type SiC epi sample that E 1 /E 2 completely disappeared after the 1400 C annealing, E 1 /E 2 is not the V C V Si defect. With positron annihilation techniques, A. A. Rempel et al (2002) have shown the energy dependence of vacancy generated by electron irradiation. With low irradiation energy of 0.3MeV, only V C was generated and at higher energy (0.5MeV), Si vacancy was detected. With focus to find the minimum energy for generating E 1 /E 2 , we have performed DLTS studies on n-type epi 6H-SiC materials irradiated by electrons with varying energies. Our results suggest that E 1 /E 2 have microstructure related to a carbon vacancy or a carbon interstitial. (orig.)

  12. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

    International Nuclear Information System (INIS)

    Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Speck, J. S.

    2013-01-01

    The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T g ) and T g ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T g on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T g (800 °C) GaN films grown under QB conditions were compared to deep level spectra of high T g (1150 °C) GaN. Reducing T g , increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09 eV and 2.9 eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T g substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T g GaN growth to active layer growth can mitigate such non-radiative channels

  13. Studies on the deep-level defects in CdZnTe crystals grown by travelling heater method

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Boru; Jie, Wanqi; Wang, Tao; Xu, Lingyan; Yang, Fan; Yin, Liying; Fu, Xu [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi (China); Nan, Ruihua [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China); Shaanxi Key Laboratory of Optoelectronic Functional Materials and Devices, School of Materials and Chemical Engineering, Xi' an Technological University, Xi' an (China)

    2017-05-15

    The variation of deep level defects along the axis of CZT:In ingots grown by Travelling Heater Method was investigated by the means of thermally stimulated current (TSC) spectra. Models for the reaction among different defects In, Te{sub i}, and V{sub Cd} were used to analyze the variation of deep level defects along the growth direction. It was found that the density of In dopant-related defects is lower in the tip, but those of Te antisites and Te interstitials are higher in the tip. The density of cadmium vacancy exhibits an initial increase followed by a decrease from the tip to tail of the ingot. In PL spectra, the intensities of (D{sub 0}, X), (DAP) and D{sub complex} peaks obviously increase from the tip to the tail, due to the increase of the density of In dopant-related defects (IN{sup +}{sub CD}), Cd vacancies, and impurities. The low concentration of net free holes was found by Hall measurements, and high resistivity with p-type conduction was demonstrated from I-V analysis. The mobility for electrons was found to increase significantly from 634 ± 26 cm{sup 2} V{sup -1} s{sup -1} in the tip to 860 ± 10 cm{sup 2} V{sup -1} s{sup -1} in the tail, due to the decrease of the deep level defect densities. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. The roles of the temperature on the structural and electronic properties of deep-level V{sub As}V{sub Ga} defects in gallium arsenide

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Deming, E-mail: xautmdm@163.com; Chen, Xi; Qiao, Hongbo; Shi, Wei; Li, Enling

    2015-07-15

    Highlights: • The energy gap of the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} is 0.82 eV. • Proves that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. • Proves that EL2 and EL6 deep-level defects can transform into each other. • Temperature has an important effect on the microstructure of deep-level defects. - Abstract: The roles of temperature on the structural and electronic properties of V{sub As}V{sub Ga} defects in gallium arsenide have been studied by using ab-initio molecular dynamic (MD) simulation. Our calculated results show that the relatively stable quaternary complex defect of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} can be converted from the V{sub As}V{sub Ga} complex clusters defect between 300 K and 1173 K; however, from 1173 K to 1373 K, the decomposition of the complex defect Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} occurs, turning into a deep-level V{sub As}V{sub Ga} cluster defect and an isolated As{sub Ga} antisite defect, and relevant defect of Ga{sub As} is recovered. The properties of Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} defect has been studied by first-principles calculations based on hybrid density functional theory. Our calculated results show that the Ga{sub As}As{sub Ga}V{sub As}V{sub Ga} belongs to EL2 deep-level defect in GaAs. Thus, we reveal that the temperature has an important effect on the microstructure of deep-level defects and defect energy level in gallium arsenide that EL2 and EL6 deep-level defects have a certain correlation, which means they could transform into each other. Controlling temperature in the growth process of GaAs could change the microstructure of deep-level defects and defect energy levels in gallium arsenide materials, whereby affects the electron transport properties of materials.

  15. Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E2

    International Nuclear Information System (INIS)

    Chen, X.D.; Fung, S.; Beling, C.D.; Lui, M.K.; Ling, C.C.; Yang, C.L.; Ge, W.K.; Wang, J.N.; Gong, M.

    2004-01-01

    N-type 6H-SiC samples irradiated with electrons having energies of E e =0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for E e ≥0.3 MeV, deep levels ED1, E 1 /E 2 , and E i appeared. By considering the minimum energy required to displace the C atom or the Si atom in the SiC lattice, it is concluded that generation of the deep levels E 1 /E 2 , as well as ED1 and E i , involves the displacement of the C atom in the SiC lattice

  16. Deep defect levels in standard and oxygen enriched silicon detectors before and after **6**0Co-gamma-irradiation

    CERN Document Server

    Stahl, J; Lindström, G; Pintilie, I

    2003-01-01

    Capacitance Deep Level Transient Spectroscopy (C-DLTS) measurements have been performed on standard and oxygen-doped silicon detectors manufactured from high-resistivity n-type float zone material with left angle bracket 111 right angle bracket and left angle bracket 100 right angle bracket orientation. Three different oxygen concentrations were achieved by the so-called diffusion oxygenated float zone (DOFZ) process initiated by the CERN-RD48 (ROSE) collaboration. Before the irradiation a material characterization has been performed. In contrast to radiation damage by neutrons or high- energy charged hadrons, were the bulk damage is dominated by a mixture of clusters and point defects, the bulk damage caused by **6**0Co-gamma-radiation is only due to the introduction of point defects. The dominant electrically active defects which have been detected after **6**0Co-gamma-irradiation by C-DLTS are the electron traps VO//i, C//iC//s, V//2( = /-), V //2(-/0) and the hole trap C//i O//i. The main difference betwe...

  17. Growth temperature dependence of Si doping efficiency and compensating deep level defect incorporation in Al0.7Ga0.3N

    International Nuclear Information System (INIS)

    Armstrong, Andrew M.; Moseley, Michael W.; Allerman, Andrew A.; Crawford, Mary H.; Wierer, Jonathan J.

    2015-01-01

    The growth temperature dependence of Si doping efficiency and deep level defect formation was investigated for n-type Al 0.7 Ga 0.3 N. It was observed that dopant compensation was greatly reduced with reduced growth temperature. Deep level optical spectroscopy and lighted capacitance-voltage were used to understand the role of acceptor-like deep level defects on doping efficiency. Deep level defects were observed at 2.34 eV, 3.56 eV, and 4.74 eV below the conduction band minimum. The latter two deep levels were identified as the major compensators because the reduction in their concentrations at reduced growth temperature correlated closely with the concomitant increase in free electron concentration. Possible mechanisms for the strong growth temperature dependence of deep level formation are considered, including thermodynamically driven compensating defect formation that can arise for a semiconductor with very large band gap energy, such as Al 0.7 Ga 0.3 N

  18. The role of surface and deep-level defects on the emission of tin oxide quantum dots

    International Nuclear Information System (INIS)

    Kumar, Vinod; Kumar, Vijay; Som, S; Ntwaeaborwa, O M; Swart, H C; Neethling, J H; Lee, Mike

    2014-01-01

    This paper reports on the role of surface and deep-level defects on the blue emission of tin oxide quantum dots (SnO 2 QDs) synthesized by the solution-combustion method at different combustion temperatures. X-ray diffraction studies showed the formation of a single rutile SnO 2 phase with a tetragonal lattice structure. High resolution transmission electron microscopy studies revealed an increase in the average dot size from 2.2 to 3.6 nm with an increase of the combustion temperature from 350 to 550 °C. A decrease in the band gap value from 3.37 to 2.76 eV was observed with the increase in dot size due to the quantum confinement effect. The photoluminescence emission was measured for excitation at 325 nm and it showed a broad blue emission band for all the combustion temperatures studied. This was due to the creation of various oxygen and tin vacancies/defects as confirmed by x-ray photoelectron spectroscopy data. The origin of the blue emission in the SnO 2 QDs is discussed with the help of an energy band diagram. (paper)

  19. Sensitivity of on-resistance and threshold voltage to buffer-related deep level defects in AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Armstrong, Andrew M; Allerman, Andrew A; Baca, Albert G; Sanchez, Carlos A

    2013-01-01

    The influence of deep levels defects located in highly resistive GaN:C buffers on the on-resistance (R ON ) and threshold voltage (V th ) of AlGaN/GaN high electron mobility transistors (HEMTs) power devices was studied by a combined photocapacitance deep level optical spectroscopy (C-DLOS) and photoconductance deep level optical spectroscopy (G-DLOS) methodology as a function of electrical stress. Two carbon-related deep levels at 1.8 and 2.85 eV below the conduction band energy minimum were identified from C-DLOS measurements under the gate electrode. It was found that buffer-related defects under the gate shifted V th positively by approximately 10%, corresponding to a net areal density of occupied defects of 8 × 10 12 cm −2 . The effect of on-state drain stress and off-state gate stress on buffer deep level occupancy and R ON was also investigated via G-DLOS. It was found that the same carbon-related deep levels observed under the gate were also active in the access region. Off-state gate stress produced significantly more trapping and degradation of R ON (∼140%) compared to on-state drain stress (∼75%). Greater sensitivity of R ON to gate stress was explained by a more sharply peaked lateral distribution of occupied deep levels between the gate and drain compared to drain stress. The overall greater sensitivity of R ON compared to V th to buffer defects suggests that electron trapping is significantly greater in the access region compared to under the gate, likely due to the larger electric fields in the latter region. (invited paper)

  20. Diode characteristics and residual deep-level defects of p+n abrupt junctions fabricated by rapid thermal annealing of boron implanted silicon

    International Nuclear Information System (INIS)

    Usami, A.; Katayama, M.; Wada, T.; Tokuda, Y.

    1987-01-01

    p + n diodes were fabricated by rapid thermal annealing (RTA) of boron implanted silicon in the annealing temperature range 700-1100 0 C for around 7 s, and the RTA temperature dependence of electrical characteristics of these diodes was studied. Deep-level transient spectroscopy (DLTS) measurements were made to evaluate residual deep-level defects in the n-type bulk. Three electron traps were observed in p + n diodes fabricated by RTA at 700 0 C. It was considered that these three traps were residual point defects near the tail of the implantation damage after RTA. Residual defect concentrations increased in the range 700-900 0 C and decreased in the range 1000-1100 0 C. The growth of defects in the bulk was ascribed to the diffusion of defects from the implanted layer during RTA. Concentrations of electron traps observed in p + n diodes fabricated by RTA at 1100 0 C were approx. 10 12 cm -3 . It was found that these residual deep-level defects observed by DLTS were inefficient generation-recombination centres since the reverse current was independent of the RTA temperatures. (author)

  1. Characterization of deep level defects in Tl6I4S single crystals by photo-induced current transient spectroscopy

    International Nuclear Information System (INIS)

    Peters, J A; Liu, Z; Sebastian, M; Wessels, B W; Im, J; Freeman, A J; Nguyen, S; Kanatzidis, M G

    2015-01-01

    Defect levels in semi-insulating Tl 6 I 4 S single crystals grown by the horizontal Bridgman technique have been characterized using photo-induced current transient spectroscopy (PICTS). These measurements revealed six electron traps located at (0.059  ±  0.007), (0.13  ±  0.012), (0.31  ±  0.074), (0.39  ±  0.019), (0.62  ±  0.110), and (0.597  ±  0.105). These defect levels are attributed to vacancies (V I , V S ) and antisite defects (I S , Tl S , Tl I ) upon comparison to calculations of native defect energy levels using density functional theory and defects recently reported from photoluminescence and photoconductivity measurements. (paper)

  2. Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Alnoor, Hatim, E-mail: hatim.alnoor@liu.se; Chey, Chan Oeurn; Pozina, Galia; Willander, Magnus; Nur, Omer [Department of Science and Technology (ITN), Campus Norrköping, Linköping University, SE-601 74 Norrköping (Sweden); Liu, Xianjie; Khranovskyy, Volodymyr [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-583 81 Linköping (Sweden)

    2015-08-15

    Hexagonal c-axis oriented zinc oxide (ZnO) nanorods (NRs) with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL) spectra were collected for all samples. Cathodoluminescence (CL) spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE) to the deep-level emission (DLE) peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h), which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h) will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.

  3. Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods

    Directory of Open Access Journals (Sweden)

    Hatim Alnoor

    2015-08-01

    Full Text Available Hexagonal c-axis oriented zinc oxide (ZnO nanorods (NRs with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL spectra were collected for all samples. Cathodoluminescence (CL spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE to the deep-level emission (DLE peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h, which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.

  4. Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

    International Nuclear Information System (INIS)

    Lee, H.S.; Yamaguchi, M.; Ekins-Daukes, N. J.; Khan, A.; Takamoto, T.; Agui, T.; Kamimura, K.; Kaneiwa, M.; Imaizumi, M.; Ohshima, T.; Itoh, H.

    2005-01-01

    Presented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al 0.08 Ga 0.92 ) 0.52 In 0.48 P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm -1 , which is lower than that in InP and GaAs. From high-temperature deep-level transient spectroscopy measurements, a deep-level defect center such as majority-carrier (hole) trap H2 (E ν +0.90±0.05 eV) was observed. The changes in carrier concentrations (Δp) and trap densities as a function of electron fluence were compared, and as a result the total introduction rate, 0.39 cm -1 , of majority-carrier trap centers (H1 and H2) is different from the carrier removal rate, 1 cm -1 , in p-AlInGaP. From the minority-carrier injection annealing (100 mA/cm 2 ), the annealing activation energy of H2 defect is ΔE=0.60 eV, which is likely to be associated with a vacancy-phosphorus Frenkel pair (V p -P i ). The recovery of defect concentration and carrier concentration in the irradiated p-AlInGaP by injection relates that a deep-level defect H2 acts as a recombination center as well as compensator center

  5. High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

    Energy Technology Data Exchange (ETDEWEB)

    Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

    2015-07-28

    Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

  6. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS{sub 2} layered semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Seyidov, MirHasan Yu., E-mail: smirhasan@gyte.edu.tr; Suleymanov, Rauf A.; Mikailzade, Faik A. [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid ave. 33, Baku AZ-1143 (Azerbaijan); Kargın, Elif Orhan [Department of Physics, Gebze Technical University, Gebze, Kocaeli 41400 (Turkey); Odrinsky, Andrei P. [Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov ave. 13, Vitebsk 210717 (Belarus)

    2015-06-14

    Lanthanum-doped high quality TlInS{sub 2} (TlInS{sub 2}:La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS{sub 2}:La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS{sub 2}:La. Thermal treatments of TlInS{sub 2}:La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10{sup −14} cm{sup 2}, corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS{sub 2}:La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10{sup −16} cm{sup 2} were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles

  7. Characterization of deep level defects and thermally stimulated depolarization phenomena in La-doped TlInS2 layered semiconductor

    International Nuclear Information System (INIS)

    Seyidov, MirHasan Yu.; Suleymanov, Rauf A.; Mikailzade, Faik A.; Kargın, Elif Orhan; Odrinsky, Andrei P.

    2015-01-01

    Lanthanum-doped high quality TlInS 2 (TlInS 2 :La) ferroelectric-semiconductor was characterized by photo-induced current transient spectroscopy (PICTS). Different impurity centers are resolved and identified. Analyses of the experimental data were performed in order to determine the characteristic parameters of the extrinsic and intrinsic defects. The energies and capturing cross section of deep traps were obtained by using the heating rate method. The observed changes in the Thermally Stimulated Depolarization Currents (TSDC) near the phase transition points in TlInS 2 :La ferroelectric-semiconductor are interpreted as a result of self-polarization of the crystal due to the internal electric field caused by charged defects. The TSDC spectra show the depolarization peaks, which are attributed to defects of dipolar origin. These peaks provide important information on the defect structure and localized energy states in TlInS 2 :La. Thermal treatments of TlInS 2 :La under an external electric field, which was applied at different temperatures, allowed us to identify a peak in TSDC which was originated from La-dopant. It was established that deep energy level trap BTE43, which are active at low temperature (T ≤ 156 K) and have activation energy 0.29 eV and the capture cross section 2.2 × 10 −14 cm 2 , corresponds to the La dopant. According to the PICTS results, the deep level trap center B5 is activated in the temperature region of incommensurate (IC) phases of TlInS 2 :La, having the giant static dielectric constant due to the structural disorders. From the PICTS simulation results for B5, native deep level trap having an activation energy of 0.3 eV and the capture cross section of 1.8 × 10 −16 cm 2 were established. A substantial amount of residual space charges is trapped by the deep level localized energy states of B5 in IC-phase. While the external electric field is applied, permanent dipoles, which are originated from the charged B5

  8. Evidence for two distinct defects contributing to the H4 deep-level transient spectroscopy peak in electron-irradiated InP

    International Nuclear Information System (INIS)

    Darwich, R.; Massarani, B.; Kaaka, M.; Awad, F.

    2000-01-01

    Deep-level transient spectroscopy (DLTS) has been used to study the dominant deep-level H4 produced in InP by electron irradiation. The characteristics of the H4 peak in Zn-doped Inp has been studied as a function of pulse duration (t p ) before and after annealing. The results show that at least two traps contribute to the H4 peak: one is a fast trap (labeled H4 f ) and the other is a show trap (labeled H4 s ). This is show through several results concerning the activation energy, the capture cross section, the full width at half-maximum, and the peak temperature shift. It is shown that both traps are irradiation defects created in P sublattice. (authors)

  9. Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

    2018-04-01

    Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC - 2.00 eV, EC - 3.25 eV, and EC - 4.37 eV with concentrations on the order of 1016 cm-3, and a lower concentration level at EC - 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC - 0.1 - 0.2 eV and EC - 0.98 eV. There was no evidence of the commonly observed trap state at ˜EC - 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively "clean" upper part of the bandgap. However, the states at ˜EC - 0.98 eV, EC - 2.00 eV, and EC - 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.

  10. Impacts of Carrier Transport and Deep Level Defects on Delayed Cathodoluminescence in Droop-Mitigating InGaN/GaN LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Zhibo; Singh, Akshay; Chesin, Jordan; Armitage, Rob; Wildeson, Isaac; Deb, Parijat; Armstrong, Andrew; Kisslinger, Kim; Stach, Eric; Gradecak, Silvija

    2017-07-25

    Prevalent droop mitigation strategies in InGaN-based LEDs require structural and/or compositional changes in the active region but are accompanied by a detrimental reduction in external quantum efficiency (EQE) due to increased Shockley-Read-Hall recombination. Understanding the optoelectronic impacts of structural modifications in InGaN/GaN quantum wells (QW) remains critical for emerging high-power LEDs. In this work, we use a combination of electron microscopy tools along with standard electrical characterization to investigate a wide range of low-droop InGaN/GaN QW designs. We find that chip-scale EQE is uncorrelated with extended well-width fluctuations observed in scanning transmission electron microscopy. Further, we observe delayed cathodoluminescence (CL) response from designs in which calculated band profiles suggest facile carrier escape from individual QWs. Samples with the slowest CL responses also exhibit the lowest EQEs and highest QW defect densities in deep level optical spectroscopy. We propose a model in which the electron beam (i) passivates deep level defect states and (ii) drives charge carrier accumulation and subsequent reduction of the built-in field across the multi-QW active region, resulting in delayed radiative recombination. Finally, we correlate CL rise dynamics with capacitance-voltage measurements and show that certain early-time components of the CL dynamics reflect the open circuit carrier population within one or more QWs.

  11. Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy.

    Science.gov (United States)

    Vu, Thi Kim Oanh; Lee, Kyoung Su; Lee, Sang Jun; Kim, Eun Kyu

    2018-09-01

    We studied defect states in In0.53Ga0.47As/InP heterojunctions with interface control by group V atoms during metalorganic chemical vapor (MOCVD) deposition. From deep level transient spectroscopy (DLTS) measurements, two defects with activation energies of 0.28 eV (E1) and 0.15 eV (E2) below the conduction band edge, were observed. The defect density of E1 for In0.53Ga0.47As/InP heterojunctions with an addition of As and P atoms was about 1.5 times higher than that of the heterojunction added P atom only. From the temperature dependence of current- voltage characteristics, the thermal activation energies of In0.53Ga0.47As/InP of heterojunctions were estimated to be 0.27 and 0.25 eV, respectively. It appeared that the reverse light current for In0.53Ga0.47As/InP heterojunction added P atom increased only by illumination of a 940 nm-LED light source. These results imply that only the P addition at the interface can enhance the quality of InGaAs/InP heterojunction.

  12. Investigation of deep level defects in epitaxial semiconducting zinc sulpho-selenide. Progress report, 15 June 1979-14 June 1980

    International Nuclear Information System (INIS)

    Wessels, B.W.

    1980-01-01

    In an effort to understand the defect structure of the ternary II-VI compound zinc sulpho-selenide, the binary compound zinc selenide was investigated. Thin single crystalline films of zinc selenide were heteroepitaxially grown on (100) GaAs. Epitaxial layers from 5 to 50 microns thick could be readily grown using a chemical vapor transport technique. The layers had an excellent morphology with few stacking faults and hillocks. Detailed epitaxial growth kinetics were examined as a function of temperature and reactant concentration. It was found that hydrogen flow rate, source and substrate temperature affect the growth rate of the epitaxial films. Au - ZnSe Schottky barrier diodes and ZnSe - GaAs n-p heterojunctions were prepared from the epitaxial layers. Current-voltage characteristics were measured on both types of diodes. From capacitance-voltage measurements the residual doping density of the epitaxial layers were found to be of the order of 10 14 - 10 15 cm -3 . Finally, we have begun to measure the deep level spectrum of both the Schottky barrier diodes and the heterojunctions. Deep level transient spectroscopy appears to be well suited for determining trapping states in ZnSe provided the material has a low enough resistivity

  13. A local environment approach for deep-level defects in semiconductors: Application to the vacancy in silicon

    International Nuclear Information System (INIS)

    Wang Yongliang; Lindefelt, U.

    1987-04-01

    A local environment approach for calculation of the electronic structure of localized defects in semiconductors is described. The method starts out from a description of localized orbitals or tight-binding model for semiconductors and is based on the recursion method of Haydock. A repeated symmetrical supercell containing 686 atoms plus defects is formed, both the translational and point-group symmetry of the crystal are fully exploited. In this paper, we report an application of this approach to an undistorted isolated vacancy by using a self-consistent Hamiltonian. A bound state of T 2 symmetry at 0.87 eV above the valence-band edge and a number of band resonances within the valence-band were extracted using Lanczos algorithm and a continued-fraction representation of the local density of states. It was found that the T 2 symmetry gap state is mainly p-like and most of the wavefunction for one of the A 1 symmetry resonances is concentrated on the vacant site and another concentrated on the first neighbors of the vacancy. From the small shifts of the band edges of silicon with a vacancy, we can conclude that the supercell is big enough and the interaction between the defects of different supercells is negligible. (author). 37 refs, 12 figs

  14. Effects of low temperature periodic annealing on the deep-level defects in 200 keV proton irradiated AlGaAs-GaAs solar cells

    Science.gov (United States)

    Li, S. S.; Chiu, T. T.; Loo, R. Y.

    1981-01-01

    The GaAs solar cell has shown good potential for space applications. However, degradation in performance occurred when the cells were irradiated by high energy electrons and protons in the space environment. The considered investigation is concerned with the effect of periodic thermal annealing on the deep-level defects induced by the 200 keV protons in the AlGaAs-GaAs solar cells. Protons at a fluence of 10 to the 11th P/sq cm were used in the irradiation cycle, while annealing temperatures of 200 C (for 24 hours), 300 C (six hours), and 400 C (six hours) were employed. The most likely candidate for the E(c) -0.71 eV electron trap observed in the 200 keV proton irradiated samples may be due to GaAs antisite, while the observed E(v) +0.18 eV hole trap has been attributed to the gallium vacancy related defect. The obtained results show that periodic annealing in the considered case does not offer any advantages over the one time annealing process.

  15. Effect of deep levels of radiation-induced defects in silicon γ-irradiated Al-V-n-Si structures characteristics

    International Nuclear Information System (INIS)

    Buzaneva, E.V.; Vdovichenko, A.D.; Kuznetsov, G.V.; Muntyan, Yu.G.

    1985-01-01

    The effect of high energy γ-quanta irradiation on the mechanism of current transmission in Al-V-N-Si structures employed in Schottky barrier instruments has been investigated. Before irradiation the structures have been annealed in the nitrogen atmosphere at T=500 deg C. The samples have been γ-irradiated on the side of the metall film at T=20 deg C. The irradiation spectrum is continuous, maximum γ-quanta energy 50 MeV, medium one is 20 MeV. The integral flux of γ-quanta, PHIsub(γ) varied from 10 7 to 10 13 quantum/cm -2 . The volt-ampere and volt-farad characteristics have been measred. It is shown that variation of the main electrophysical characteristics of the Al-V-nSi structures upon γ-irradiation is due to deep levels of radiation defects arising in silicon with the energetic position Esub(c)-E=0.38-0.4 eV and Esub(v)+Esub(2)=0.23-0.25 → β, where Esub(c), Esub(v) are energies for the conduction band bottom and the valence band ceiling. In the 77-293 K temperature range the determining range the determining effect on current mission mechanism in irradiated structures is exerted by resonance electron tunnelling with participation of a level with the Esub(c)-Esub(1)=0.38-0.4 eV

  16. Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy (DLTS) technique

    OpenAIRE

    Al Saqri, Noor alhuda; Felix, Jorlandio F.; Aziz, Mohsin; Kunets, Vasyl P.; Jameel, Dler Adil; Taylor, David; Henini, M.; Abd El-sadek, Mahmmoud S.; Furrow, Colin; Ware, Morgan E.; Benamara, Mourad; Mortazavi, Mansour; Salamo, Gregory

    2016-01-01

    InGaAs quantum wire (QWr) intermediate-band solar cell based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current–voltage (I–V) and capacitance–voltage (C-V) techniques, were found to change with temperature over a wide range of 20–340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the ...

  17. Electronic structure properties of deep defects in hBN

    Science.gov (United States)

    Dev, Pratibha; Prdm Collaboration

    In recent years, the search for room-temperature solid-state qubit (quantum bit) candidates has revived interest in the study of deep-defect centers in semiconductors. The charged NV-center in diamond is the best known amongst these defects. However, as a host material, diamond poses several challenges and so, increasingly, there is an interest in exploring deep defects in alternative semiconductors such as hBN. The layered structure of hBN makes it a scalable platform for quantum applications, as there is a greater potential for controlling the location of the deep defect in the 2D-matrix through careful experiments. Using density functional theory-based methods, we have studied the electronic and structural properties of several deep defects in hBN. Native defects within hBN layers are shown to have high spin ground states that should survive even at room temperature, making them interesting solid-state qubit candidates in a 2D matrix. Partnership for Reduced Dimensional Material (PRDM) is part of the NSF sponsored Partnerships for Research and Education in Materials (PREM).

  18. As-grown deep-level defects in n-GaN grown by metal-organic chemical vapor deposition on freestanding GaN

    International Nuclear Information System (INIS)

    Chen Shang; Ishikawa, Kenji; Hori, Masaru; Honda, Unhi; Shibata, Tatsunari; Matsumura, Toshiya; Tokuda, Yutaka; Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu

    2012-01-01

    Traps of energy levels E c -0.26 and E c -0.61 eV have been identified as as-grown traps in n-GaN grown by metal-organic chemical vapor deposition by using deep level transient spectroscopy of the Schottky contacts fabricated by resistive evaporation. The additional traps of E c -0.13 and E c -0.65 eV have been observed in samples whose contacts are deposited by electron-beam evaporation. An increase in concentration of the E c -0.13 and E c -0.65 eV traps when approaching the interface between the contact and the GaN film supports our argument that these traps are induced by electron-beam irradiation. Conversely, the depth profiles of as-grown traps show different profiles between several samples with increased or uniform distribution in the near surface below 50 nm. Similar profiles are observed in GaN grown on a sapphire substrate. We conclude that the growth process causes these large concentrations of as-grown traps in the near-surface region. It is speculated that the finishing step in the growth process should be an essential issue in the investigation of the surface state of GaN.

  19. Deep convolutional neural networks for detection of rail surface defects

    NARCIS (Netherlands)

    Faghih Roohi, S.; Hajizadeh, S.; Nunez Vicencio, Alfredo; Babuska, R.; De Schutter, B.H.K.; Estevez, Pablo A.; Angelov, Plamen P.; Del Moral Hernandez, Emilio

    2016-01-01

    In this paper, we propose a deep convolutional neural network solution to the analysis of image data for the detection of rail surface defects. The images are obtained from many hours of automated video recordings. This huge amount of data makes it impossible to manually inspect the images and

  20. Effect of deep native defects on ultrasound propagation in TlInS{sub 2} layered crystal

    Energy Technology Data Exchange (ETDEWEB)

    Seyidov, MirHasan Yu., E-mail: smirhasan@gtu.edu.tr [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid Avenue, 33, AZ-1143 Baku (Azerbaijan); Suleymanov, Rauf A. [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); Institute of Physics of NAS of Azerbaijan, H. Javid Avenue, 33, AZ-1143 Baku (Azerbaijan); Odrinsky, Andrei P. [Institute of Technical Acoustics, National Academy of Sciences of Belarus, Lyudnikov Avenue 13, Vitebsk 210717 (Belarus); Kırbaş, Cafer [Department of Physics, Gebze Technical University, 41400 Gebze, Kocaeli (Turkey); The Scientific and Technological Research Council of Turkey, National Metrology Institute (TUBITAK UME), PQ 54 41470 Gebze, Kocaeli (Turkey)

    2016-09-15

    We have investigated p-type semiconductor–ferroelectric TlInS{sub 2} by means of Photo-Induced Current Transient Spectroscopy (PICTS) technique in the temperature range 77–350 K for the detection of native deep defect levels in TlInS{sub 2}. Five native deep defect levels were detected and their energy levels and capture cross sections were evaluated. Focusing on these data, the influence of these defects on the longitudinal and transverse ultrasound waves propagation as well as the effect of electric field on ultrasound waves were studied at different temperatures. The acoustic properties were investigated by the pulse-echo method. The direct contribution of thermally activated charged defects to the acoustic properties of TlInS{sub 2} was demonstrated. The key role of charged native deep level defects in elastic properties of TlInS{sub 2} was shown.

  1. Deep sub-wavelength metrology for advanced defect classification

    Science.gov (United States)

    van der Walle, P.; Kramer, E.; van der Donck, J. C. J.; Mulckhuyse, W.; Nijsten, L.; Bernal Arango, F. A.; de Jong, A.; van Zeijl, E.; Spruit, H. E. T.; van den Berg, J. H.; Nanda, G.; van Langen-Suurling, A. K.; Alkemade, P. F. A.; Pereira, S. F.; Maas, D. J.

    2017-06-01

    Particle defects are important contributors to yield loss in semi-conductor manufacturing. Particles need to be detected and characterized in order to determine and eliminate their root cause. We have conceived a process flow for advanced defect classification (ADC) that distinguishes three consecutive steps; detection, review and classification. For defect detection, TNO has developed the Rapid Nano (RN3) particle scanner, which illuminates the sample from nine azimuth angles. The RN3 is capable of detecting 42 nm Latex Sphere Equivalent (LSE) particles on XXX-flat Silicon wafers. For each sample, the lower detection limit (LDL) can be verified by an analysis of the speckle signal, which originates from the surface roughness of the substrate. In detection-mode (RN3.1), the signal from all illumination angles is added. In review-mode (RN3.9), the signals from all nine arms are recorded individually and analyzed in order to retrieve additional information on the shape and size of deep sub-wavelength defects. This paper presents experimental and modelling results on the extraction of shape information from the RN3.9 multi-azimuth signal such as aspect ratio, skewness, and orientation of test defects. Both modeling and experimental work confirm that the RN3.9 signal contains detailed defect shape information. After review by RN3.9, defects are coarsely classified, yielding a purified Defect-of-Interest (DoI) list for further analysis on slower metrology tools, such as SEM, AFM or HIM, that provide more detailed review data and further classification. Purifying the DoI list via optical metrology with RN3.9 will make inspection time on slower review tools more efficient.

  2. Study and microscopic characterization of the cadmium telluride deep levels

    International Nuclear Information System (INIS)

    Biglari, B.

    1989-05-01

    The spectroscopic methods PICTS, QTS and CTS were developed and perfected to investigate deep level analysis of high resistivity CdTe crystals which were either undoped, or doped with chlorine and copper. Crystals which were grown in space were also investigated. The main characterization of defect levels was determined and different correlations were established between the material's resistivity, chemical residues, dopant concentration and the nuclear radiation detector parameters. Using PICTS and CTS techniques, the generation of defects, under strong gamma-ray irradiation and particle bombardment was also studied. The influence of hydrogen on the main electrical characteristics of CdTe, in particular its ability to passivate the electrical activity of many deep defect and impurity states have been demonstrated. The compensation effects of Cl, Cu and H + are interpreted using the qualitative models based on different possibilities of pairing or triplet formation between the ions of these dopants and those of defects [fr

  3. Investigation of deep levels in GaInNAs

    International Nuclear Information System (INIS)

    Abulfotuh, F.; Balcioglu, A.; Friedman, D.; Geisz, J.; Kurtz, S.

    1999-01-01

    This paper presents and discusses the first Deep-Level transient spectroscopy (DLTS) data obtained from measurements carried out on both Schottky barriers and homojunction devices of GaInNAs. The effect of N and In doping on the electrical properties of the GaNInAs devices, which results in structural defects and interface states, has been investigated. Moreover, the location and densities of deep levels related to the presence of N, In, and N+In are identified and correlated with the device performance. The data confirmed that the presence of N alone creates a high density of shallow hole traps related to the N atom and structural defects in the device. Doping by In, if present alone, also creates low-density deep traps (related to the In atom and structural defects) and extremely deep interface states. On the other hand, the co-presence of In and N eliminates both the interface states and levels related to structural defects. However, the device still has a high density of the shallow and deep traps that are responsible for the photocurrent loss in the GaNInAs device, together with the possible short diffusion length. copyright 1999 American Institute of Physics

  4. Investigation of Deep Levels in GaInNas

    International Nuclear Information System (INIS)

    Balcioglu, A.; Friedman, D.; Abulfotuh, F.; Geisz, J.; Kurtz, S.

    1998-01-01

    This paper presents and discusses the first Deep-Level transient spectroscopy (DLTS) data obtained from measurements carried out on both Schottky barriers and homojunction devices of GaInNAs. The effect of N and In doping on the electrical properties of the GaNInAs devices, which results in structural defects and interface states, has been investigated. Moreover, the location and densities of deep levels related to the presence of N, In, and N+In are identified and correlated with the device performance. The data confirmed that the presence of N alone creates a high density of shallow hole traps related to the N atom and structural defects in the device. Doping by In, if present alone, also creates low-density deep traps (related to the In atom and structural defects) and extremely deep interface states. On the other hand, the co-presence of In and N eliminates both the interface states and levels related to structural defects. However, the device still has a high density of the shallow and deep traps that are responsible for the photocurrent loss in the GaNInAs device, together with the possible short diffusion length

  5. The calculation of deep levels in semiconductors by using a recursion method for super-cells

    International Nuclear Information System (INIS)

    Wong Yongliang.

    1987-01-01

    The paper presents the theory of deep levels in semiconductors, the super-cell approach to the theory of deep level impurities, the calculation of band structure by using the tight-binding method and the recursion method used to study the defects in the presence of lattice relaxation and extended defect complexes. 47 refs

  6. Admittance spectroscopy or deep level transient spectroscopy: A contrasting juxtaposition

    Science.gov (United States)

    Bollmann, Joachim; Venter, Andre

    2018-04-01

    A comprehensive understanding of defects in semiconductors remains of primary importance. In this paper the effectiveness of two of the most commonly used semiconductor defect spectroscopy techniques, viz. deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS) are reviewed. The analysis of defects present in commercially available SiC diodes shows that admittance spectroscopy allows the identification of deep traps with reduced measurement effort compared to deep Level Transient Spectroscopy (DLTS). Besides the N-donor, well-studied intrinsic defects were detected in these diodes. Determination of their activation energy and defect density, using the two techniques, confirm that the sensitivity of AS is comparable to that of DLTS while, due to its well defined peak shape, the spectroscopic resolution is superior. Additionally, admittance spectroscopy can analyze faster emission processes which make the study of shallow defects more practical and even that of shallow dopant levels, possible. A comparative summary for the relevant spectroscopic features of the two capacitance methods are presented.

  7. Discriminating a deep defect from shallow acceptors in supercell calculations: gallium antisite in GaAs

    Science.gov (United States)

    Schultz, Peter

    To make reliable first principles predictions of defect energies in semiconductors, it is crucial to discriminate between effective-mass-like defects--for which existing supercell methods fail--and deep defects--for which density functional theory calculations can yield reliable predictions of defect energy levels. The gallium antisite GaAs is often associated with the 78/203 meV shallow double acceptor in Ga-rich gallium arsenide. Within a framework of level occupation patterns, analyses of structure and spin stabilization can be used within a supercell approach to distinguish localized deep defect states from shallow acceptors such as BAs. This systematic analysis determines that the gallium antisite is inconsistent with a shallow state, and cannot be the 78/203 shallow double acceptor. The properties of the Ga antisite in GaAs are described, predicting that the Ga antisite is a deep double acceptor and has two donor states, one of which might be accidentally shallow. -- Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  8. Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

    International Nuclear Information System (INIS)

    Li Xiao-Jing; Zhao De-Gang; Jiang De-Sheng; Chen Ping; Zhu Jian-Jun; Liu Zong-Shun; Yang Jing; He Xiao-Guang; Yang Hui; Zhang Li-Qun; Zhang Shu-Ming; Le Ling-Cong; Liu Jian-Ping

    2015-01-01

    The influence of a deep-level-defect (DLD) band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN (p ++ -GaN) contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping (VRH) transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p ++ -GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p ++ -GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97× 10 −4 Ω·cm 2 is achieved. (paper)

  9. Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors

    Science.gov (United States)

    Deng, A. H.; Shan, Y. Y.; Fung, S.; Beling, C. D.

    2002-03-01

    Unlike its conventional applications in lattice defect characterization, positron annihilation lifetime technique was applied to study temperature-dependent deep level transients in semiconductors. Defect levels in the band gap can be determined as they are determined by conventional deep level transient spectroscopy (DLTS) studies. The promising advantage of this application of positron annihilation over the conventional DLTS is that it could further extract extra microstructure information of deep-level defects, such as whether a deep level defect is vacancy related or not. A demonstration of EL2 defect level transient study in GaAs was shown and the EL2 level of 0.82±0.02 eV was obtained by a standard Arrhenius analysis, similar to that in conventional DLTS studies.

  10. Studies of deep levels in He+-irradiated silicon

    International Nuclear Information System (INIS)

    Schmidt, D.C.; Barbot, J.F.; Blanchard, C.

    1997-01-01

    Deep levels created in n-epitaxial silicon by alpha particle irradiation in the dose range from 10 9 to 10 13 particles/cm 2 have been investigated by the deep level transient spectroscopy technique and capacitance-voltage profiling. Under low fluence irradiation at least four main electron traps have been observed. With further increase in irradiation fluence, two new levels located at E c -0.56 eV and E c -0.64 eV appear on the high-temperature side of the DLTS signal. The slope change observed in the amplitude variations of the singly negative charge state of the divacancy versus the dose takes place when these two new levels appear. This suggests that both are multivacancy-related defects. After annealing at 350 C for 15 min, all electron traps have disappeared. Moreover, no shallow levels are created during the annealing. (orig.)

  11. Deep Ocean Contribution to Sea Level Rise

    Science.gov (United States)

    Chang, L.; Sun, W.; Tang, H.; Wang, Q.

    2017-12-01

    The ocean temperature and salinity change in the upper 2000m can be detected by Argo floats, so we can know the steric height change of the ocean. But the ocean layers above 2000m represent only 50% of the total ocean volume. Although the temperature and salinity change are small compared to the upper ocean, the deep ocean contribution to sea level might be significant because of its large volume. There has been some research on the deep ocean rely on the very sparse situ observation and are limited to decadal and longer-term rates of change. The available observational data in the deep ocean are too spares to determine the temporal variability, and the long-term changes may have a bias. We will use the Argo date and combine the situ data and topographic data to estimate the temperature and salinity of the sea water below 2000m, so we can obtain a monthly data. We will analyze the seasonal and annual change of the steric height change due to the deep ocean between 2005 and 2016. And we will evaluate the result combination the present-day satellite and in situ observing systems. The deep ocean contribution can be inferred indirectly as the difference between the altimetry minus GRACE and Argo-based steric sea level.

  12. Scanning ion deep level transient spectroscopy: I. Theory

    International Nuclear Information System (INIS)

    Laird, J S; Jagadish, C; Jamieson, D N; Legge, G J F

    2006-01-01

    Theoretical aspects of a new technique for the MeV ion microbeam are described in detail for the first time. The basis of the technique, termed scanning ion deep level transient spectroscopy (SIDLTS), is the imaging of defect distributions within semiconductor devices. The principles of SIDLTS are similar to those behind other deep level transient spectroscopy (DLTS) techniques with the main difference stemming from the injection of carriers into traps using the localized energy-loss of a focused MeV ion beam. Energy-loss of an MeV ion generates an electron-hole pair plasma, providing the equivalent of a DLTS trap filling pulse with a duration which depends on space-charge screening of the applied electric field and ambipolar erosion of the plasma for short ranging ions. Some nanoseconds later, the detrapping current transient is monitored as a charge transient. Scanning the beam in conjunction with transient analysis allows the imaging of defect levels. As with DLTS, the temperature dependence of the transient can be used to extract trap activation levels. In this, the first of a two-part paper, we introduce the various stages of corner capture and derive a simple expression for the observed charge transient. The second paper will illustrate the technique on a MeV ion implanted Au-Si Schottky junction

  13. Talbot effect of the defective grating in deep Fresnel region

    Science.gov (United States)

    Teng, Shuyun; Wang, Junhong; Zhang, Wei; Cui, Yuwei

    2015-02-01

    Talbot effect of the grating with different defect is studied theoretically and experimentally in this paper. The defects of grating include the loss of the diffraction unit, the dislocation of the diffraction unit and the modulation of the unit separation. The exact diffraction distributions of three kinds of defective gratings are obtained according to the finite-difference time-domain (FDTD) method. The calculation results show the image of the missing or dislocating unit appears at the Talbot distance (as mentioned in K. Patorski Prog. Opt., 27, 1989, pp.1-108). This is the so-called self-repair ability of grating imaging. In addition, some more phenomena are discovered. The loss or the dislocation of diffraction unit causes the diffraction distortion within a certain radial angle. The regular modulation of unit separation changes the original diffraction, but the new periodicity of the diffraction distribution rebuilds. The self-imaging of grating with smaller random modulation still keeps the partial self-repair ability, and yet this characteristic depends on the modulation degree of defective grating. These diffraction phenomena of the defective gratings are explained by use of the diffraction theory of grating. The practical experiment is also performed and the experimental results confirm the theoretic predictions.

  14. Fabric defect detection based on visual saliency using deep feature and low-rank recovery

    Science.gov (United States)

    Liu, Zhoufeng; Wang, Baorui; Li, Chunlei; Li, Bicao; Dong, Yan

    2018-04-01

    Fabric defect detection plays an important role in improving the quality of fabric product. In this paper, a novel fabric defect detection method based on visual saliency using deep feature and low-rank recovery was proposed. First, unsupervised training is carried out by the initial network parameters based on MNIST large datasets. The supervised fine-tuning of fabric image library based on Convolutional Neural Networks (CNNs) is implemented, and then more accurate deep neural network model is generated. Second, the fabric images are uniformly divided into the image block with the same size, then we extract their multi-layer deep features using the trained deep network. Thereafter, all the extracted features are concentrated into a feature matrix. Third, low-rank matrix recovery is adopted to divide the feature matrix into the low-rank matrix which indicates the background and the sparse matrix which indicates the salient defect. In the end, the iterative optimal threshold segmentation algorithm is utilized to segment the saliency maps generated by the sparse matrix to locate the fabric defect area. Experimental results demonstrate that the feature extracted by CNN is more suitable for characterizing the fabric texture than the traditional LBP, HOG and other hand-crafted features extraction method, and the proposed method can accurately detect the defect regions of various fabric defects, even for the image with complex texture.

  15. Deep Inelastic Scattering at the Amplitude Level

    International Nuclear Information System (INIS)

    Brodsky, Stanley J.

    2005-01-01

    The deep inelastic lepton scattering and deeply virtual Compton scattering cross sections can be interpreted in terms of the fundamental wavefunctions defined by the light-front Fock expansion, thus allowing tests of QCD at the amplitude level. The AdS/CFT correspondence between gauge theory and string theory provides remarkable new insights into QCD, including a model for hadronic wavefunctions which display conformal scaling at short distances and color confinement at large distances

  16. Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

    International Nuclear Information System (INIS)

    Armstrong, A.; Caudill, J.; Ringel, S. A.; Corrion, A.; Poblenz, C.; Mishra, U. K.; Speck, J. S.

    2008-01-01

    Deep level defects in p-type GaN:Mg grown by molecular beam epitaxy were characterized using steady-state photocapacitance and deep level optical spectroscopy (DLOS). Low frequency capacitance measurements were used to alleviate dispersion effects stemming from the deep Mg acceptor. Use of DLOS enabled a quantitative survey of both deep acceptor and deep donor levels, the latter being particularly important due to the limited understanding of minority carrier states for p-type GaN. Simultaneous electron and hole photoemissions resulted in a convoluted deep level spectrum that was decoupled by emphasizing either majority or minority carrier optical emission through control of the thermal filling time conditions. In this manner, DLOS was able to resolve and quantify the properties of deep levels residing near both the conduction and valence bandedges in the same sample. Bandgap states through hole photoemission were observed at E v +3.05 eV, E v +3.22 eV and E v +3.26 eV. Additionally, DLOS revealed levels at E c -3.24 eV and E c -2.97 eV through electron emission to the conduction band with the former attributed to the Mg acceptor itself. The detected deep donor concentration is less than 2% of activated [Mg] and demonstrates the excellent quality of the film

  17. Deep levels in silicon–oxygen superlattices

    International Nuclear Information System (INIS)

    Simoen, E; Jayachandran, S; Delabie, A; Caymax, M; Heyns, M

    2016-01-01

    This work reports on the deep levels observed in Pt/Al 2 O 3 /p-type Si metal-oxide-semiconductor capacitors containing a silicon–oxygen superlattice (SL) by deep-level transient spectroscopy. It is shown that the presence of the SL gives rise to a broad band of hole traps occurring around the silicon mid gap, which is absent in reference samples with a silicon epitaxial layer. In addition, the density of states of the deep layers roughly scales with the number of SL periods for the as-deposited samples. Annealing in a forming gas atmosphere reduces the maximum concentration significantly, while the peak energy position shifts from close-to mid-gap towards the valence band edge. Based on the flat-band voltage shift of the Capacitance–Voltage characteristics it is inferred that positive charge is introduced by the oxygen atomic layers in the SL, indicating the donor nature of the underlying hole traps. In some cases, a minor peak associated with P b dangling bond centers at the Si/SiO 2 interface has been observed as well. (paper)

  18. Skull defect reconstruction based on a new hybrid level set.

    Science.gov (United States)

    Zhang, Ziqun; Zhang, Ran; Song, Zhijian

    2014-01-01

    Skull defect reconstruction is an important aspect of surgical repair. Historically, a skull defect prosthesis was created by the mirroring technique, surface fitting, or formed templates. These methods are not based on the anatomy of the individual patient's skull, and therefore, the prosthesis cannot precisely correct the defect. This study presented a new hybrid level set model, taking into account both the global optimization region information and the local accuracy edge information, while avoiding re-initialization during the evolution of the level set function. Based on the new method, a skull defect was reconstructed, and the skull prosthesis was produced by rapid prototyping technology. This resulted in a skull defect prosthesis that well matched the skull defect with excellent individual adaptation.

  19. Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Duc, Tran Thien [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi (Viet Nam); Pozina, Galia; Son, Nguyen Tien; Kordina, Olof; Janzén, Erik; Hemmingsson, Carl [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); Ohshima, Takeshi [Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292 (Japan)

    2016-03-07

    Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level transient spectroscopy and minority carrier transient spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (E{sub V} + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 10{sup 14 }cm{sup −2}, a second hole trap labelled H2 is observed. Simultaneously, the concentration of two electron traps, labelled T1 (E{sub C} – 0.12 eV) and T2 (E{sub C} – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10{sup −3 }cm{sup −1} and 0.9 cm{sup −1}, respectively. Due to the low introduction rate of T1, it is suggested that the defect is associated with a complex. The high introduction rate of trap H1 and T2 suggests that the defects are associated with primary intrinsic defects or complexes. Some deep levels previously observed in irradiated GaN layers with higher threading dislocation densities are not detected in present investigation. It is therefore suggested that the absent traps may be related to primary defects segregated around dislocations.

  20. Scanning deep level transient spectroscopy using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Laird, J S; Bardos, R A; Saint, A; Moloney, G M; Legge, G F.J. [Melbourne Univ., Parkville, VIC (Australia)

    1994-12-31

    Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.

  1. Deep-level transient spectroscopy of low-energy ion-irradiated silicon

    DEFF Research Database (Denmark)

    Kolkovsky, Vladimir; Privitera, V.; Nylandsted Larsen, Arne

    2009-01-01

     During electron-gun deposition of metal layers on semiconductors, the semiconductor is bombarded with low-energy metal ions creating defects in the outermost surface layer. For many years, it has been a puzzle why deep-level transient spectroscopy spectra of the as-deposited, electron-gun evapor...

  2. Scanning deep level transient spectroscopy using an MeV ion microprobe

    Energy Technology Data Exchange (ETDEWEB)

    Laird, J.S.; Bardos, R.A.; Saint, A.; Moloney, G.M.; Legge, G.F.J. [Melbourne Univ., Parkville, VIC (Australia)

    1993-12-31

    Traditionally the scanning ion microprobe has given little or no information regarding the electronic structure of materials in particular semiconductors. A new imaging technique called Scanning Ion Deep Level Transient Spectroscopy (SIDLTS) is presented which is able to spatially map alterations in the band gap structure of materials by lattice defects or impurities. 3 refs., 2 figs.

  3. Comparison of the nonradiative deep levels in silicon solar cells made of monocrystalline, polycrystalline and amorphous silicon using deep level transient spectroscopy (DLTS)

    International Nuclear Information System (INIS)

    Hammadeh, H.; Darwich, R.

    2005-03-01

    The aim of this work is to study the defects in solar cells fabricated from crystalline, polycrystalline and amorphous silicon. Using Deep Level Transient Spectroscopy technique, (DLTS), we have determined their activation energies, concentrations and their effect on the solar cell efficiency. Our results show a DLTS peak in crystalline silicon which we could attribute to tow peaks originating from iron contamination. In the polycrystalline based solar cells we observed a series of non conventional DLTS peaks while in amorphous silicon we observed a peak using low measurement frequencies (between 8 kHz and 20 kHz). We studied these defects and determined their activation energies as well as the capture cross section for one of them. We suggest a possible configuration of these defects. We cannot able to study the effect of these defects on the solar cell efficiency because we have not the experimental set-up which measure the solar cell efficiency. (Authors)

  4. Treatment of deep hyalin cartilage defects with autologous perichondrial grafts.

    Science.gov (United States)

    Bruns, J; Steinhagen, J

    2003-07-01

    Perichondrial transplantation was performed in 29 patients suffering from a deep chondral lesion with different etiologies. Only those patients with a cartilage lesion in the knee joint were included. Patients were initially and postoperatively examined using the Lysholm- and HSS-Score. In most of the patients (20/29) trauma and the recurrence of osteochondrosis dissecans (6/29) were the cause of the cartilage lesion. Most often the medial femoral condyle (19/29) and, secondly, the lateral femoral condyle (5/29) were involved. In six patients additional therapeutic measures (ACL-plasty, n = 2; high tibial osteotomy because of varus mal-alignment, n = 4) had to be adopted. Follow-up examination was possible in 26/29 patients after a minimum postoperative period of 12 months. All patients exhibited a distinct and significant increase in both the Lysholm and the HSS-score. A follow-up after a minimum of 24 months was possible in 13/29 patients. Even these patients exhibited a distinct and significant improvement. Multiple follow-up examinations in 9/29 patients demonstrated maintenance of the first postoperative results obtained after one postoperative year for a maximum of 49 months in most of the patients. Only in one female patient, implantation of a semi-constrained total knee replacement was necessary because of osteoarthrosis resulting from crystal arthropathy (chondrocalcinosis). It was possible to obtain biopsies from three patients at the time osteosynthetic material was removed. In all cases hyaline-like cartilage was histologically observed. In the treatment of selected patients suffering from a circumscript cartilaginous lesion resulting from trauma or the recurrence of osteochondritis dissecans with a concomitant cartilage lesion but without major signs of osteoarthritis, perichondrial grafting can achieve acceptable clinical results, after a short follow-up period. In order to achieve satisfying results a good selection of patients and additional

  5. Charge deep-level transient spectroscopy study of high-energy-electron-beam-irradiated hydrogenated amorphous silicon

    NARCIS (Netherlands)

    Klaver, A.; Nádaždy, V.; Zeman, M.; Swaaiij, R.A.C.M.M.

    2006-01-01

    We present a study of changes in the defect density of states in hydrogenated amorphous silicon (a-Si:H) due to high-energy electron irradiation using charged deep-level transient spectroscopy. It was found that defect states near the conduction band were removed, while in other band gap regions the

  6. Photoionization spectroscopy of deep defects responsible for current collapse in nitride-based field effect transistors

    International Nuclear Information System (INIS)

    Klein, P B; Binari, S C

    2003-01-01

    This review is concerned with the characterization and identification of the deep centres that cause current collapse in nitride-based field effect transistors. Photoionization spectroscopy is an optical technique that has been developed to probe the characteristics of these defects. Measured spectral dependences provide information on trap depth, lattice coupling and on the location of the defects in the device structure. The spectrum of an individual trap may also be regarded as a 'fingerprint' of the defect, allowing the trap to be followed in response to the variation of external parameters. The basis for these measurements is derived through a modelling procedure that accounts quantitatively for the light-induced drain current increase in the collapsed device. Applying the model to fit the measured variation of drain current increase with light illumination provides an estimate of the concentrations and photoionization cross-sections of the deep defects. The results of photoionization studies of GaN metal-semiconductor field effect transistors and AlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic chemical vapour deposition (MOCVD) are presented and the conclusions regarding the nature of the deep traps responsible are discussed. Finally, recent photoionization studies of current collapse induced by short-term (several hours) bias stress in AlGaN/GaN HEMTs are described and analysed for devices grown by both MOCVD and molecular beam epitaxy. (topical review)

  7. Characterization of an anion antisite defect as a deep double donor in InP

    International Nuclear Information System (INIS)

    Ando, K.; Katsui, A.; Jeon, D.Y.; Watkins, G.D.; Gislason, H.P.

    1989-01-01

    A study of optically detected magnetic resonance (ODMR) on the anion antisite defect in electron irradiated InP has been made by monitoring the magnetic circular dichroism (MCD), combined with DLTS experiment. Comparison of the ODMR and DLTS results reveals that the intrinsic anion antisite defect acts as a deep double-donor in the gap. The first ionization (D o /D 1+ ) process occurs both in thermal and optical excitation as a mid-gap electron trap, detected by DLTS and DLOS experiment. (author) 12 refs., 6 figs

  8. Effects of deep impurities and structural defects in polycrystalline silicon for photovoltaic applications

    International Nuclear Information System (INIS)

    Galluzzi, F.; Scafe, E.; Beghi, M.; Fossati, S.; Tincani, M.; Pizzini, S.

    1985-01-01

    An extensive experimental study of minority carrier recombination in CZ grown polycrystalline silicon intentionally doped with metallic impurities (Ti, V, Fe, Cr, Zr) is reported. Experimental values of average diffusion lengths have been compared with values calculated by a simple model of carrier recombination, taking into account the effects of impurities, grain boundaries and intragrain crystal defects. The results are fairly consistent and allow the determination of threshold densities for structural defects and deep impurities. The author's analysis gives a simple quantitative description of recombination processes in solar-grade silicon, as far as the average behaviour is concerned

  9. Positron deep level transient spectroscopy — a new application of positron annihilation to semiconductor physics

    Science.gov (United States)

    Beling, C. D.; Fung, S.; Au, H. L.; Ling, C. C.; Reddy, C. V.; Deng, A. H.; Panda, B. K.

    1997-05-01

    Recent positron mobility and lifetime measurements made on ac-biased metal on semi-insulating GaAs junctions, which have identified the native EL2 defect through a determination of the characteristic ionization energy of the donor level, are reviewed. It is shown that these measurements point towards a new spectroscopy, tentatively named positron-DLTS (deep level transient spectroscopy), that is the direct complement to conventional DLTS in that it monitors transients in the electric field of the depletion region rather than the inversely related depletion width, as deep levels undergo ionization. In this new spectroscopy, which may be applied to doped material by use of a suitable positron beam, electric field transients are monitored through the Doppler shift of the annihilation radiation resulting from the drift velocity of the positron in the depletion region. Two useful extensions of the new spectroscopy beyond conventional capacitance-DLTS are suggested. The first is that in some instances information on the microstructure of the defect causing the deep level may be inferred from the sensitivity of the positron to vacancy defects of negative and neutral charge states. The second is that the positron annihilation technique is intrinsically much faster than conventional DLTS with the capability of observing transients some 10 6 times faster, thus allowing deep levels (and even shallow levels) to be investigated without problems associated with carrier freeze-out.

  10. Localized deep levels in AlxGa1−xN epitaxial films with various Al compositions

    International Nuclear Information System (INIS)

    Shi Li-Yang; Shen Bo; Wang Ping; Yan Jian-Chang; Wang Jun-Xi

    2014-01-01

    By using high-temperature deep-level transient spectroscopy (HT-DLTS) and other electrical measurement techniques, localized deep levels in n-type Al x Ga 1−x N epitaxial films with various Al compositions (x = 0, 0.14, 0.24, 0.33, and 0.43) have been investigated. It is found that there are three distinct deep levels in Al x Ga 1−x N films, whose level position with respect to the conduction band increases as Al composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in Al x Ga 1−x N films. (condensed matter: structural, mechanical, and thermal properties)

  11. Iron and intrinsic deep level states in Ga2O3

    Science.gov (United States)

    Ingebrigtsen, M. E.; Varley, J. B.; Kuznetsov, A. Yu.; Svensson, B. G.; Alfieri, G.; Mihaila, A.; Badstübner, U.; Vines, L.

    2018-01-01

    Using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga2O3. First, our results indicate that FeGa, and not an intrinsic defect, acts as the deep acceptor responsible for the often dominating E2 level at ˜0.78 eV below the conduction band minimum. Second, by provoking additional intrinsic defect generation via proton irradiation, we identified the emergence of a new level, labeled as E2*, having the ionization energy very close to that of E2, but exhibiting an order of magnitude larger capture cross section. Importantly, the properties of E2* are found to be consistent with its intrinsic origin. As such, contradictory opinions of a long standing literature debate on either extrinsic or intrinsic origin of the deep acceptor in question converge accounting for possible contributions from E2 and E2* in different experimental conditions.

  12. Large lattice relaxation deep levels in neutron-irradiated GaN

    International Nuclear Information System (INIS)

    Li, S.; Zhang, J.D.; Beling, C.D.; Wang, K.; Wang, R.X.; Gong, M.; Sarkar, C.K.

    2005-01-01

    Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) measurements have been carried out in neutron-irradiated n-type hydride-vapor-phase-epitaxy-grown GaN. A defect center characterized by a DLTS line, labeled as N1, is observed at E C -E T =0.17 eV. Another line, labeled as N2, at E C -E T =0.23 eV, seems to be induced at the same rate as N1 under irradiation and may be identified with E1. Other defects native to wurtzite GaN such as the C and E2 lines appear to enhance under neutron irradiation. The DLOS results show that the defects N1 and N2 have large Frank-Condon shifts of 0.64 and 0.67 eV, respectively, and hence large lattice relaxations. The as-grown and neutron-irradiated samples all exhibit the persistent photoconductivity effect commonly seen in GaN that may be attributed to DX centers. The concentration of the DX centers increases significantly with neutron dosage and is helpful in sustaining sample conductivity at low temperatures, thus making possible DLTS measurements on N1 an N2 in the radiation-induced deep-donor defect compensated material which otherwise are prevented by carrier freeze-out

  13. Multiple-level defect species evaluation from average carrier decay

    Science.gov (United States)

    Debuf, Didier

    2003-10-01

    An expression for the average decay is determined by solving the the carrier continuity equations, which include terms for multiple defect recombination. This expression is the decay measured by techniques such as the contactless photoconductance decay method, which determines the average or volume integrated decay. Implicit in the above is the requirement for good surface passivation such that only bulk properties are observed. A proposed experimental configuration is given to achieve the intended goal of an assessment of the type of defect in an n-type Czochralski-grown silicon semiconductor with an unusually high relative lifetime. The high lifetime is explained in terms of a ground excited state multiple-level defect system. Also, minority carrier trapping is investigated.

  14. The role of deep level traps in barrier height of 4H-SiC Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Zaremba, G., E-mail: gzaremba@ite.waw.pl [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Adamus, Z. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Jung, W.; Kaminska, E.; Borysiewicz, M.A.; Korwin-Mikke, K. [Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

    2012-09-01

    This paper presents a discussion about the influence of deep level defects on the height of Ni-Si based Schottky barriers to 4H-SiC. The defects were characterized by deep level transient spectroscopy (DLTS) in a wide range of temperatures (78-750 K). The numerical simulation of barrier height value as a function of dominant defect concentration was carried out to estimate concentration, necessary to 'pin' Fermi level and thus significantly influence the barrier height. From comparison of the results of simulation with barrier height values obtained by capacitance-voltage (C-V) measurements it seems that dominant defect in measured concentration has a very small impact on the barrier height and on the increase of reverse current.

  15. Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

    Energy Technology Data Exchange (ETDEWEB)

    Drummond, T.J.

    1999-03-11

    Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

  16. Mathematical Modeling of Radiant Heat Transfer in Mirror Systems Considering Deep Reflecting Surface Defects

    Directory of Open Access Journals (Sweden)

    V. V. Leonov

    2014-01-01

    Full Text Available When designing large-sized mirror concentrating systems (MCS for high-temperature solar power plants, one must have at disposal reasonably reliable and economical methods and tools, making it possible to analyze its characteristics, to predict them depending on the operation conditions and accordingly to choose the most suitable system for the solution of particular task.Experimental determination of MCS characteristics requires complicated and expensive experimentation, having significant limitations on interpretation of the results, as well as limitations imposed due to the size of the structure. Therefore it is of particular interest to develop a mathematical model capable of estimating power characteristics of MCS considering the influence of operating conditions, design features, roughness and other surface defects.For efficient solution of the tasks the model must ensure simulation of solar radiant flux as well as simulation of geometrical and optical characteristics of reflection surface and their interaction. In this connection a statistical mathematical model of radiation heat exchange based on use of Monte Carlo methods and Finite Element Method was developed and realized in the software complex, making it possible to determine main characteristics of the MCS.In this paper the main attention is given to definition of MCS radiation characteristics with account for deep reflecting surface defects (cavities, craters. Deep cavities are not typical for MCS, but their occurrence is possible during operation as a result of erosion or any physical damage. For example, for space technology it is primarily micrometeorite erosion.

  17. Damage related deep electron levels in ion implanted GaAs

    International Nuclear Information System (INIS)

    Allsopp, D.W.E.; Peaker, A.R.

    1986-01-01

    A study has been made of the deep electron levels in semi-insulating GaAs implanted with either 78 Se + or 29 Si + ions and rendered n-type by subsequent annealing without encapsulation in partial pressures of arsenic or arsine. Three implantation related deep states were detected with concentration profiles approximating to the type of Gaussian distributions expected for point defects related to ion implantation damage. Further heat treatment of the samples at 500 0 C in a gas ambient of U 2 /H 2 substantially reduced concentration of these deep levels. Two of these states were thought to be related to displacements of the substrate atoms. The third, at Esubc -0.67 eV, was found in only 78 Se + ion implanted GaAs substrates and was thought to be a defect involving both Se and As atoms, rather than intrinsic lattice disorder. It is proposed that the annealing rate of these implantation related deep levels depends crucially on the in-diffusion of arsenic vacancies during heat treatments. (author)

  18. Inductively coupled plasma induced deep levels in epitaxial n-GaAs

    International Nuclear Information System (INIS)

    Auret, F.D.; Janse van Rensburg, P.J.; Meyer, W.E.; Coelho, S.M.M.; Kolkovsky, Vl.; Botha, J.R.; Nyamhere, C.; Venter, A.

    2012-01-01

    The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent electron traps (E c —0.046 eV, E c —0.186 eV, E c —0.314 eV. E c —0.528 eV and E c —0.605 eV) were detected. The metastable defect E c —0.046 eV having a trap signature similar to E1 is observed for the first time. E c —0.314 eV and E c —0.605 eV are metastable and appear to be similar to the M3 and M4 defects present in dc H-plasma exposed GaAs.

  19. Scanning ion deep level transient spectroscopy: II. Ion irradiated Au-Si Schottky junctions

    International Nuclear Information System (INIS)

    Laird, J S; Jagadish, C; Jamieson, D N; Legge, G J F

    2006-01-01

    Here we introduce a new technique called scanning ion deep level transient spectroscopy (SIDLTS) for the spatial analysis of electrically active defects in devices. In the first part of this paper, a simple theory behind SIDLTS was introduced and factors determining its sensitivity and resolution were discussed. In this paper, we demonstrate the technique on MeV boron implantation induced defects in an Au-Si Schottky junction. SIDLTS measurements are compared with capacitance DLTS measurements over the temperature range, 100-300 K. SIDLTS analyses indicate the presence of two levels, one of which was positively identified as the E c - 0.23 eV divacancy level. The high sensitivity of SIDLTS is verified and the advantages and limitations of the technique are discussed in light of non-exponential components in the charge transient response. Reasons for several undetected levels are also discussed

  20. Effect of thallium-201 blood levels on reversible myocardial defects

    International Nuclear Information System (INIS)

    Nelson, C.W.; Wilson, R.A.; Angello, D.A.; Palac, R.T.

    1989-01-01

    To determine if 201 Tl plasma blood levels correlate with the presence of reversible myocardial defects during exercise testing, 14 patients with stable coronary artery disease underwent two separate exercise 201 Tl stress tests. Between initial and delayed imaging, on one test the patients drank an instant breakfast drink (eating) and on the other they drank an equivalent volume of water as a control (H 2 O). Thallium-201 imaging was performed immediately postexercise, immediately after eating/H 2 O and 210 min after eating/H 2 O. Between initial and immediate post eating/H 2 O images 201Tl reversible defects occurred in 27/38 regions in the H 2 O test versus 15/38 regions in the eating test (p = 0.02). Over this early time period, plasma 201 Tl activity was significantly higher in the H 2 O test than eating test (p less than 0.05). In conclusion, early reversal of 201 Tl defects may, in part, be the result of higher plasma 201 Tl activity early after initial postexercise 201 Tl imaging

  1. Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation

    International Nuclear Information System (INIS)

    Benzohra, Mohamed; Olivie, Francois; Idrissi-Benzohra, Malika; Ketata, Kaouther; Ketata, Mohamed

    2002-01-01

    It is well established that low energy B + ion implantation into Ge- (or Si) implantation pre-amorphised silicon allows ultra-shallow p + n junctions formation. However, this process is known to generate defects such as dislocation loops, vacancies and interstitials which can act as vehicles to different mechanisms inducing electrically active levels into the silicon bulk. The junctions studied have been obtained using 3 keV/10 15 cm -2 B + implantation into Ge-implantation pre-amorphised substrates and into a reference crystalline substrate. Accurate measurements using deep level transient spectroscopy (DLTS) and isothermal transient capacitance ΔC(t,T) were performed to characterise these levels. Such knowledge is crucial to improve the device characteristics. In order to sweep the silicon band gap, various experimental conditions were considered. The analysis of DLTS spectra have first showed three deep levels associated to secondary induced defects. Their concentration profiles were derived from isothermal transient capacitance at depths up to 3.5 μm into the silicon bulk and allowed us to detect a new deep level. The evolution of such defect distribution in correlation with the technological steps is discussed. The end of range (EOR) defect influence on electrical activity of secondary induced defects in ultra-shallow p + n diodes is clearly demonstrated

  2. Thermoluminescent and dosimetric properties of anion-defective a-Al2O3 single crystals with filled deep traps

    International Nuclear Information System (INIS)

    Kortov, V.S.; Milman, I.I.; Nikiforov, S.V.

    2002-01-01

    Some new experimental results illustrating the effect of deep traps on luminescent and dosimetric properties of anion-defective single crystals of a-Al 2 O 3 have been described. It was found that deep traps had an electronic origin. They were filled thanks to the photoionisation of F-centres and their filling was accompanied by the conversion of FF+ centres. The experiments revealed an interactive interaction of deep trapping centres. A model taking into account the thermal ionisation of excited states of F-centres was proposed. This model describes the trap filling process and mechanisms of the radio-, photo- and thermoluminescence, TSC and TSEE of the crystals under study. The sensitivity of TLD-500 detectors based on anion-defective a-Al 2 O 3 equalised when deep trapping centres were filled. (author)

  3. I–V, C–V and deep level transient spectroscopy study of 24 MeV ...

    Indian Academy of Sciences (India)

    This paper describes the effect of 24 MeV proton irradiation on the electrical characteristics of a pnp bipolar junction transistor 2N 2905A. –, – and DLTS measurements are carried out to characterize the transistor before and after irradiation. The properties of deep level defects observed in the bulk of the transistor are ...

  4. Optoelectronics and defect levels in hydroxyapatite by first-principles

    Science.gov (United States)

    Avakyan, Leon A.; Paramonova, Ekaterina V.; Coutinho, José; Öberg, Sven; Bystrov, Vladimir S.; Bugaev, Lusegen A.

    2018-04-01

    Hydroxyapatite (HAp) is an important component of mammal bones and teeth, being widely used in prosthetic implants. Despite the importance of HAp in medicine, several promising applications involving this material (e.g., in photo-catalysis) depend on how well we understand its fundamental properties. Among the ones that are either unknown or not known accurately, we have the electronic band structure and all that relates to it, including the bandgap width. We employ state-of-the-art methodologies, including density hybrid-functional theory and many-body perturbation theory within the dynamically screened single-particle Green's function approximation, to look at the optoelectronic properties of HAp. These methods are also applied to the calculation of defect levels. We find that the use of a mix of (semi-)local and exact exchange in the exchange-correlation functional brings a drastic improvement to the band structure. Important side effects include improvements in the description of dielectric and optical properties not only involving conduction band (excited) states but also the valence. We find that the highly dispersive conduction band bottom of HAp originates from anti-bonding σ* states along the ⋯OH-OH-⋯ infinite chain, suggesting the formation of a conductive 1D-ice phase. The choice of the exchange-correlation treatment to the calculation of defect levels was also investigated by using the OH-vacancy as a testing model. We find that donor and acceptor transitions obtained within semi-local density functional theory (DFT) differ from those of hybrid-DFT by almost 2 eV. Such a large discrepancy emphasizes the importance of using a high-quality description of the electron-electron interactions in the calculation of electronic and optical transitions of defects in HAp.

  5. DEEP LEARNING AND IMAGE PROCESSING FOR AUTOMATED CRACK DETECTION AND DEFECT MEASUREMENT IN UNDERGROUND STRUCTURES

    Directory of Open Access Journals (Sweden)

    F. Panella

    2018-05-01

    Full Text Available This work presents the combination of Deep-Learning (DL and image processing to produce an automated cracks recognition and defect measurement tool for civil structures. The authors focus on tunnel civil structures and survey and have developed an end to end tool for asset management of underground structures. In order to maintain the serviceability of tunnels, regular inspection is needed to assess their structural status. The traditional method of carrying out the survey is the visual inspection: simple, but slow and relatively expensive and the quality of the output depends on the ability and experience of the engineer as well as on the total workload (stress and tiredness may influence the ability to observe and record information. As a result of these issues, in the last decade there is the desire to automate the monitoring using new methods of inspection. The present paper has the goal of combining DL with traditional image processing to create a tool able to detect, locate and measure the structural defect.

  6. Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

    International Nuclear Information System (INIS)

    Armstrong, A.; Arehart, A.R.; Green, D.; Mishra, U.K.; Speck, J.S.; Ringel, S.A.

    2005-01-01

    The impact of C incorporation on the deep level spectrum of n-type and semi-insulating GaN:C:Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was investigated by the combination of deep level transient spectroscopy, steady-state photocapacitance, and transient deep level optical spectroscopy. The deep level spectra of the GaN:C:Si samples exhibited several band-gap states. A monotonic relation between systematic doping with C and quantitative trap concentration revealed C-related deep levels. A deep acceptor at E c -2.05 eV and a deep donor at E c -0.11 eV are newly reported states, and the latter is the first directly observed deep level attributed to the C Ga defect. A configuration-coordinate model involving localized lattice distortion revealed strong evidence that C-related deep levels at E c -3.0 eV and E ν +0.9 eV are likely identical and associated with the yellow luminescence in C-doped GaN films. Of the deep levels whose trap concentration increase with C doping, the band-gap states at E c -3.0 and 3.28 eV had the largest concentration, implying that free-carrier compensation by these deep levels is responsible for the semi-insulating behavior of GaN:C:Si films grown by MBE. The differing manner by which C incorporation in GaN may impact electrical conductivity in films grown by MBE and metal-organic chemical-vapor deposition is discussed

  7. The study of the deep levels of In/CdTe Schottky diode

    International Nuclear Information System (INIS)

    Kim, Hey-kyeong; Jeen, Gwangsoo; Nam, S.H.

    2000-01-01

    p-type CdTe is an important component of II-VI compound based solar cells as well as a promising substance for X- and gamma-ray detector. Despite that a lot of researches has been performed on CdTe, the manufacture of large homogeneous ingots with high resistivity (ρ) and a high value of lifetime-mobility product (μτ) still difficult. Both ρ and μτ, which determine detection properties, are strongly dependent on the impurity and defect levels of crystals. As in general, deep defect levels act as recombination centers and influence strongly the efficiency of the detector material, so information about deep levels is an essential need. To estimate deep levels of semiconductor materials, the TSC (thermally stimulated current), TSCD (thermally stimulated capacitor discharges) and admittance spectroscopic method are used. In order to study the deep levels of CdTe, the samples were taken from a CdTe-crystal grown by the vertical Bridgman method. From this boule single crystalline samples of about 0.5 mm thickness were prepared. All samples were initially p-type which was determined by the hot-probe method. In-CdTe Schottky diodes were prepared by the process of evaporation of In in the vacuum of 10 -6 Torr on surface of CdTe. The area of the deposited contact was equal to 1.626 mm 2 . As ohmic contacts, dots of Au soldered for 30 min. in temperature 160 deg C. Measurements were carried out within a 100-250 K temperature and 1-10 kHz frequency range. Related Arrhenius plots, i.e. the experimentally determined emission rates corresponding to the signal maximum divided by the square of temperature as a function of reciprocal temperature are plotted. The experimental data were best fitted by the least-square method. The fitting yielded the defect level energies E T . In this study, by using admittance spectroscopy measurements, we presented the information about the energy and concentration of the defect levels inside the gap, in order to improve the quality of

  8. Deep level centers in electron-irradiated silicon crystals doped with copper at different temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yarykin, Nikolai [Institute of Microelectronics Technology, RAS, Chernogolovka (Russian Federation); Weber, Joerg [Technische Universitaet Dresden (Germany)

    2017-07-15

    The effect of bombardment with energetic particles on the deep-level spectrum of copper-contaminated silicon wafers is studied by space charge spectroscopy methods. The p-type FZ-Si wafers were doped with copper in the temperature range of 645-750 C and then irradiated with the 10{sup 15} cm{sup -2} fluence of 5 MeV electrons at room temperature. Only the mobile Cu{sub i} species and the Cu{sub PL} centers are detected in significant concentrations in the non-irradiated Cu-doped wafers. The properties of the irradiated samples are found to qualitatively depend on the copper in-diffusion temperature T{sub diff}. For T{sub diff} > 700 C, the irradiation partially reduces the Cu{sub i} concentration and introduces additional Cu{sub PL} centers while no standard radiation defects are detected. If T{sub diff} was below ∝700 C, the irradiation totally removes the mobile Cu{sub i} species. Instead, the standard radiation defects and their complexes with copper appear in the deep-level spectrum. A model for the defects reaction scheme during the irradiation is derived and discussed. DLTS spectrum of the Cu-contaminated and then irradiated silicon qualitatively depends on the copper in-diffusion temperature. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

    Science.gov (United States)

    Gao, Xuejiao; Guan, Bin; Mesli, Abdelmadjid; Chen, Kaixiang; Dan, Yaping

    2018-01-09

    It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mass spectrometry indicate that phosphorus is the only electrically active dopant after the molecular monolayer doping. However, during this process, at least 20% of the phosphorus dopants are electrically deactivated. The deep-level transient spectroscopy shows that carbon-related defects are responsible for such deactivation.

  10. Positron deep-level transient spectroscopy in semi-insulating-GaAs using the positron velocity transient method

    International Nuclear Information System (INIS)

    Tsia, M.; Fung, S.; Beling, C.D.

    2001-01-01

    Recently a new semiconductor defect spectroscopy, namely positron deep level transient spectroscopy (PDLTS) has been proposed that combines the energy selectivity of deep level transient spectroscopy with the structural sensitivity of positron annihilation spectroscopy. This paper focuses on one variant of PDLTS, namely positron velocity PDLTS, which has no sensitivity towards vacancy defects but nevertheless is useful in studying deep levels in semi-insulators. In the present study the electric field within the depletion region of semi-insulating GaAs is monitored through the measurement of the small Doppler shift in the annihilation radiation that comes from this region as a result of positron drift. The drift is the result of an increasing electric field produced by space charge building up from ionizing deep level defects. Doppler shift transients are measured between 50-300 K. The EL2 level emission transients are clearly seen at temperatures around 300 K that yield E C -0.78±0.08eV for the energy of EL2. The EL2 electron capture rate is found to have an activation energy of 0.61±0.08eV which most probably arises from freeze out of conduction electrons. We find the surprising result that emission and capture transients can be seen at temperatures below 200 K. Possible reasons for these transients are discussed. (orig.)

  11. Effect of antimony on the deep-level traps in GaInNAsSb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Muhammad Monirul, E-mail: islam.monir.ke@u.tsukuba.ac.jp; Miyashita, Naoya; Ahsan, Nazmul; Okada, Yoshitaka [Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4-6-1 Komaba, Meguro ku, Tokyo 153-8904 (Japan); Sakurai, Takeaki; Akimoto, Katsuhiro [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)

    2014-09-15

    Admittance spectroscopy has been performed to investigate the effect of antimony (Sb) on GaInNAs material in relation to the deep-level defects in this material. Two electron traps, E1 and E2 at an energy level 0.12 and 0.41 eV below the conduction band (E{sub C}), respectively, were found in undoped GaInNAs. Bias-voltage dependent admittance confirmed that E1 is an interface-type defect being spatially localized at the GaInNAs/GaAs interface, while E2 is a bulk-type defect located around mid-gap of GaInNAs layer. Introduction of Sb improved the material quality which was evident from the reduction of both the interface and bulk-type defects.

  12. Flap reconstruction for soft-tissue defects with exposed hardware following deep infection after internal fixation of ankle fractures.

    Science.gov (United States)

    Ovaska, Mikko T; Madanat, Rami; Tukiainen, Erkki; Pulliainen, Lea; Sintonen, Harri; Mäkinen, Tatu J

    2014-12-01

    The aim of the present study was to determine the outcome for patients treated with flap reconstruction following deep ankle fracture infection with exposed hardware. Out of 3041 consecutive ankle fracture operations in 3030 patients from 2006 to 2011, we identified 56 patients requiring flap reconstruction following deep infection. Thirty-two of these patients could be examined at a follow-up visit. Olerud-Molander Ankle (OMA) score, 15D score, Numeric Rating Scale (NRS), and clinical examination were used to assess the outcome. A total of 58 flap reconstructions were performed in 56 patients with a mean age of 57 years (range 25–93 years) and mean follow-up time of 52 months. The most commonly used reconstruction was a distally based peroneus brevis muscle flap with a split-thickness skin graft. A microvascular free flap was required in only one patient. 22 (39%) patients required subsequent surgical interventions because of a flap-related complication. With flap reconstruction, hardware could eventually be salvaged in 53% of patients with a non-consolidated fracture. The mean OMA score was fair or poor in 53% of the patients, and only 56% had recovered their pre-injury level of function. Half of the patients had shoe wear limitations. The 15D score showed a significantly poorer health-related quality of life compared to an age-standardised sample of the general population. The mean pain NRS was 2.1 (range 0–6), and the mean satisfaction NRS was 6.6 (range 0–10). Our study showed that successful treatment of a soft-tissue defect with exposed hardware following ankle fracture infections can be achieved with local flaps. Despite eventual reconstructive success, complications are common. Patients perceive a poorer health-related quality of life, have shoe wear limitations, and only half of them achieve their pre-injury level of function.

  13. Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers

    Science.gov (United States)

    Golovynskyi, S.; Datsenko, O.; Seravalli, L.; Kozak, O.; Trevisi, G.; Frigeri, P.; Babichuk, I. S.; Golovynska, I.; Qu, Junle

    2017-12-01

    Deep levels in metamorphic InAs/In x Ga1-x As quantum dot (QD) structures are studied with deep level thermally stimulated conductivity (TSC), photoconductivity (PC) and photoluminescence (PL) spectroscopy and compared with data from pseudomorphic InGaAs/GaAs QDs investigated previously by the same techniques. We have found that for a low content of indium (x = 0.15) the trap density in the plane of self-assembled QDs is comparable or less than the one for InGaAs/GaAs QDs. However, the trap density increases with x, resulting in a rise of the defect photoresponse in PC and TSC spectra as well as a reduction of the QD PL intensity. The activation energies of the deep levels and some traps correspond to known defect complexes EL2, EL6, EL7, EL9, and EL10 inherent in GaAs, and three traps are attributed to the extended defects, located in InGaAs embedding layers. The rest of them have been found as concentrated mainly close to QDs, as their density in the deeper InGaAs buffers is much lower. This an important result for the development of light-emitting and light-sensitive devices based on metamorphic InAs QDs, as it is a strong indication that the defect density is not higher than in pseudomorphic InAs QDs.

  14. The Deep-Level-Reasoning-Question Effect: The Role of Dialogue and Deep-Level-Reasoning Questions during Vicarious Learning

    Science.gov (United States)

    Craig, Scotty D.; Sullins, Jeremiah; Witherspoon, Amy; Gholson, Barry

    2006-01-01

    We investigated the impact of dialogue and deep-level-reasoning questions on vicarious learning in 2 studies with undergraduates. In Experiment 1, participants learned material by interacting with AutoTutor or by viewing 1 of 4 vicarious learning conditions: a noninteractive recorded version of the AutoTutor dialogues, a dialogue with a…

  15. Deep borehole disposal of high-level radioactive waste.

    Energy Technology Data Exchange (ETDEWEB)

    Stein, Joshua S.; Freeze, Geoffrey A.; Brady, Patrick Vane; Swift, Peter N.; Rechard, Robert Paul; Arnold, Bill Walter; Kanney, Joseph F.; Bauer, Stephen J.

    2009-07-01

    Preliminary evaluation of deep borehole disposal of high-level radioactive waste and spent nuclear fuel indicates the potential for excellent long-term safety performance at costs competitive with mined repositories. Significant fluid flow through basement rock is prevented, in part, by low permeabilities, poorly connected transport pathways, and overburden self-sealing. Deep fluids also resist vertical movement because they are density stratified. Thermal hydrologic calculations estimate the thermal pulse from emplaced waste to be small (less than 20 C at 10 meters from the borehole, for less than a few hundred years), and to result in maximum total vertical fluid movement of {approx}100 m. Reducing conditions will sharply limit solubilities of most dose-critical radionuclides at depth, and high ionic strengths of deep fluids will prevent colloidal transport. For the bounding analysis of this report, waste is envisioned to be emplaced as fuel assemblies stacked inside drill casing that are lowered, and emplaced using off-the-shelf oilfield and geothermal drilling techniques, into the lower 1-2 km portion of a vertical borehole {approx}45 cm in diameter and 3-5 km deep, followed by borehole sealing. Deep borehole disposal of radioactive waste in the United States would require modifications to the Nuclear Waste Policy Act and to applicable regulatory standards for long-term performance set by the US Environmental Protection Agency (40 CFR part 191) and US Nuclear Regulatory Commission (10 CFR part 60). The performance analysis described here is based on the assumption that long-term standards for deep borehole disposal would be identical in the key regards to those prescribed for existing repositories (40 CFR part 197 and 10 CFR part 63).

  16. Electrical and optical deep level spectroscopy on Os doped p-InP

    International Nuclear Information System (INIS)

    Parveen, S.; Zafar, N.; Khan, A.; Qureshi, U.S.; Iqbal, M.Z.

    1997-01-01

    Transition metal (TM) impurities are introduced for obtaining semi insulating (III-V) compound semiconductors used as base material for electronic and optoelectronic devices. TM doping introduces near mid gap levels which are used to compensate shallow level donors and acceptors in (III-V) compound semiconductors. The study of electrical properties of heavier transition metals in InP has been turned to an active field of research owing to their potential to produce thermally stable semi insulating substrate materials. Osmium has been tried for this purpose in our work. InP: Os samples have been grown by low pressure metalorganic chemical vapour deposition (LP-MOCVD). Optical and electrical Deep Level Transient Spectroscopy Techniques have been used to characterise osmium related deep level defects in the p-type samples. Three majority carrier (Hole) emitting levels OsA, OsB, OsC and one minority carrier (electron) emitting level Osl are observed in the DLTS and ODLTS measurements on p-type InP:Os. ON optical injection, only Osl appears and all other majority carrier emitting levels disappear dramatically. Special emphasis is given to the detailed comparison by ODLTS and EDLTS, which yields important information on the relative capture cross-sections of Osmium induced levels in p-InP. (author)

  17. Radiation-induced bistable centers with deep levels in silicon n{sup +}–p structures

    Energy Technology Data Exchange (ETDEWEB)

    Lastovskii, S. B., E-mail: lastov@ifttp.bas-net.by [Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus (Belarus); Markevich, V. P. [Manchester University, Photon Science Institute (United Kingdom); Yakushevich, H. S.; Murin, L. I. [Scientific and Practical Materials Research Center of the National Academy of Sciences of Belarus (Belarus); Krylov, V. P. [Vladimir State University (Russian Federation)

    2016-06-15

    The method of deep level transient spectroscopy is used to study electrically active defects in p-type silicon crystals irradiated with MeV electrons and α particles. A new radiation-induced defect with the properties of bistable centers is determined and studied. After keeping the irradiated samples at room temperature for a long time or after their short-time annealing at T ∼ 370 K, this defect does not display any electrical activity in p-type silicon. However, as a result of the subsequent injection of minority charge carriers, this center transforms into the metastable configuration with deep levels located at E{sub V} + 0.45 and E{sub V} + 0.54 eV. The reverse transition to the main configuration occurs in the temperature range of 50–100°C and is characterized by the activation energy ∼1.25 eV and a frequency factor of ∼5 × 10{sup 15} s{sup –1}. The determined defect is thermally stable at temperatures as high as T ∼ 450 K. It is assumed that this defect can either be a complex of an intrinsic interstitial silicon atom with an interstitial carbon atom or a complex consisting of an intrinsic interstitial silicon atom with an interstitial boron atom.

  18. Deep subcritical levels measurements dependents upon kinetic distortion factors

    International Nuclear Information System (INIS)

    Pan Shibiao; Li Xiang; Fu Guo'en; Huang Liyuan; Mu Keliang

    2013-01-01

    The measurement of deep subcritical levels, with the increase of subcriticality, showed that the results impact on the kinetic distortion effect, along with neutron flux strongly deteriorated. Using the diffusion theory, calculations have been carried out to quantify the kinetic distortion correction factors in subcritical systems, and these indicate that epithermal neutron distributions are strongly affected by kinetic distortion. Subcriticality measurements in four different rod-state combination at the zero power device was carried out. The test data analysis shows that, with increasing subcriticality, kinetic distortion effect correction factor gradually increases from 1.052 to 1.065, corresponding reactive correction amount of 0.78β eff ∼ 3.01β eff . Thus, it is necessary to consider the kinetic distortion effect in the deep subcritical reactivity measurements. (authors)

  19. Multi-level deep supervised networks for retinal vessel segmentation.

    Science.gov (United States)

    Mo, Juan; Zhang, Lei

    2017-12-01

    Changes in the appearance of retinal blood vessels are an important indicator for various ophthalmologic and cardiovascular diseases, including diabetes, hypertension, arteriosclerosis, and choroidal neovascularization. Vessel segmentation from retinal images is very challenging because of low blood vessel contrast, intricate vessel topology, and the presence of pathologies such as microaneurysms and hemorrhages. To overcome these challenges, we propose a neural network-based method for vessel segmentation. A deep supervised fully convolutional network is developed by leveraging multi-level hierarchical features of the deep networks. To improve the discriminative capability of features in lower layers of the deep network and guide the gradient back propagation to overcome gradient vanishing, deep supervision with auxiliary classifiers is incorporated in some intermediate layers of the network. Moreover, the transferred knowledge learned from other domains is used to alleviate the issue of insufficient medical training data. The proposed approach does not rely on hand-crafted features and needs no problem-specific preprocessing or postprocessing, which reduces the impact of subjective factors. We evaluate the proposed method on three publicly available databases, the DRIVE, STARE, and CHASE_DB1 databases. Extensive experiments demonstrate that our approach achieves better or comparable performance to state-of-the-art methods with a much faster processing speed, making it suitable for real-world clinical applications. The results of cross-training experiments demonstrate its robustness with respect to the training set. The proposed approach segments retinal vessels accurately with a much faster processing speed and can be easily applied to other biomedical segmentation tasks.

  20. High-level radioactive waste disposal in the deep ocean

    International Nuclear Information System (INIS)

    Hill, H.W.

    1977-01-01

    A joint programme has begun between the Fisheries Laboratory, Lowestoft and the Institute of Oceanographic Sciences, Wormley to study the dispersion of radioactivity in the deep ocean arising from the possible dumping of high level waste on the sea bed in vitrified-glass form which would permit slow leakage over a long term scale. The programme consists firstly of the development of a simple diffusion/advection model for the dispersion of radioactivity in a closed and finite ocean, which overcomes many of the criticisms of the earlier model proposed by Webb and Morley. Preliminary results from this new model are comparable to those of the Webb-Morley model for radio isotopes with half-lives of 10-300 years but are considerably more restrictive outside this range, particularly for those which are much longer-lived. The second part of the programme, towards which the emphasis is directed, concerns the field programme planned to measure the advection and diffusion parameters in the deeper layers of the ocean to provide realistic input parameters to the model and increase our fundamental understanding of the environment in which the radioactive materials may be released. The first cruises of the programme will take place in late 1976 and involve deep current meter deployments and float dispersion experiments around the present NEA dump site with some sediment sampling, so that adsorption experiments can be started on typical deep sea sediments. The programme will expand the number of long-term deep moored stations over the next five years and include further float experiments, CTD profiling, and other physical oceanography. In the second half of the 5-year programme, attempts will be made to measure diffusion parameters in the deeper layers of the ocean using radioactive tracers

  1. Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

    International Nuclear Information System (INIS)

    Nyamhere, C.; Botha, J.R.; Venter, A.

    2011-01-01

    Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E C -0.33 eV, E C -0.36 eV, E C -0.38 eV and E C -0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E C -0.58 eV. Isochronal annealing of the passivated material between 50 and 300 o C, revealed the emergence of a secondary defect, not previously observed, at E C -0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 o C, as all the defects originally observed in the reference sample were recovered.

  2. Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment

    Energy Technology Data Exchange (ETDEWEB)

    Nyamhere, C., E-mail: s210239522@live.nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Botha, J.R.; Venter, A. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2011-05-15

    Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K. However, L-DLTS with its higher resolution enabled the splitting of two narrowly spaced emission rates. Consequently four electron traps at, E{sub C}-0.33 eV, E{sub C}-0.36 eV, E{sub C}-0.38 eV and E{sub C}-0.56 eV were observed in the control sample. Following hydrogenation, all these traps were passivated with a new complex (presumably the M3), emerging at E{sub C}-0.58 eV. Isochronal annealing of the passivated material between 50 and 300 {sup o}C, revealed the emergence of a secondary defect, not previously observed, at E{sub C}-0.37 eV. Finally, the effect of hydrogen passivation is completely reversed upon annealing at 300 {sup o}C, as all the defects originally observed in the reference sample were recovered.

  3. Inductively coupled plasma induced deep levels in epitaxial n-GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Auret, F.D.; Janse van Rensburg, P.J.; Meyer, W.E.; Coelho, S.M.M. [Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa); Kolkovsky, Vl. [Technische Universitaet, Dresden, 01062 Dresden (Germany); Botha, J.R.; Nyamhere, C. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Venter, A., E-mail: andre.venter@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    The electronic properties of defects introduced by low energy inductively coupled Ar plasma etching of n-type (Si doped) GaAs were investigated by deep level transient spectroscopy (DLTS) and Laplace DLTS. Several prominent electron traps (E{sub c}-0.046 eV, E{sub c}-0.186 eV, E{sub c}-0.314 eV. E{sub c}-0.528 eV and E{sub c}-0.605 eV) were detected. The metastable defect E{sub c}-0.046 eV having a trap signature similar to E1 is observed for the first time. E{sub c}-0.314 eV and E{sub c}-0.605 eV are metastable and appear to be similar to the M3 and M4 defects present in dc H-plasma exposed GaAs.

  4. Studies on deep electronic levels in silicon and aluminium gallium arsenide alloys

    International Nuclear Information System (INIS)

    Pettersson, H.

    1993-01-01

    This thesis reports on investigations of the electrical and optical properties of deep impurity centers, related to the transition metals (TMs) Ti, Mo, W, V and Ni, in silicon. Emission rates, capture cross sections and photoionization cross sections for these impurities were determined by means of various Junction Space Charge Techniques (JSCTs), such as Deep Level Transient Spectroscopy (DLTS), dark capacitance transient and photo capacitance transient techniques. Changes in Gibbs free energy as a function of temperature were calculated for all levels. From this temperature dependence, the changes in enthalpy and entropy involved in the electron and hole transitions were deduced. The influence of high electric fields on the electronic levels in chalcogen-doped silicon were investigated using the dark capacitance transient technique. The enhancement of the electron emission from the deep centers indicated a more complex field enhancement model than the expected Poole-Frenkel effect for coulombic potentials. The possibility to determine charge states of defects using the Poole-Frenkel effect, as often suggested, is therefore questioned. The observation of a persistent decrease of the dark conductivity due to illumination in simplified AlGaAs/GaAs high Electron Mobility Transistors (HEMTs) over the temperature range 170K< T<300K is reported. A model for this peculiar behavior, based on the recombination of electrons in the two-dimensional electron gas (2DEG) located at the AlGaAs/GaAs interface with holes generated by a two-step excitation process via the deep EL2 center in the GaAs epilayer, is put forward

  5. Deep impurity levels in n-type copper oxides

    International Nuclear Information System (INIS)

    Ovchinnikov, S.G.

    1994-01-01

    The density of Nd 2-x Ce x CuO 4 monoparticle states was calculated by the method of precise diagonalization of multielectron hamiltonian of 6-zone model for CuO cluster. Emergence of a deep impurity state of a symmetry in the middle of dielectric slit, which is a mixture of d z 2-states of copper and a 1 -molecular orbital of oxygen, is shown. Fluctuation of parameters of p-d jump and energies of charge transfer provide additional fine impurity levels near the bottom of conductivity zone and ceiling of valency zone. 30 refs., 4 figs

  6. Defect properties of Sb- and Bi-doped CuInSe{sub 2}: The effect of the deep lone-pair s states

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji-Sang; Yang, Ji-Hui; Ramanathan, Kannan; Wei, Su-Huai, E-mail: Suhuai.Wei@nrel.gov [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2014-12-15

    Bi or Sb doping has been used to make better material properties of polycrystalline Cu{sub 2}(In,Ga)Se{sub 2} as solar cell absorbers, including the experimentally observed improved electrical properties. However, the mechanism is still not clear. Using first-principles method, we investigate the stability and electronic structure of Bi- and Sb-related defects in CuInSe{sub 2} and study their effects on the doping efficiency. Contrary to previous thinking that Bi or Sb substituted on the anion site, we find that under anion-rich conditions, the impurities can substitute on cation sites and are isovalent to In because of the formation of the impurity lone pair s states. When the impurities substitute for Cu, the defects act as shallow double donors and help remove the deep In{sub Cu} level, thus resulting in the improved carrier life time. On the other hand, under anion-poor conditions, impurities at the Se site create amphoteric deep levels that are detrimental to the device performance.

  7. Automatic Defect Detection of Fasteners on the Catenary Support Device Using Deep Convolutional Neural Network

    NARCIS (Netherlands)

    Chen, Junwen; Liu, Zhigang; Wang, H.; Nunez Vicencio, Alfredo; Han, Zhiwei

    2018-01-01

    The excitation and vibration triggered by the long-term operation of railway vehicles inevitably result in defective states of catenary support devices. With the massive construction of high-speed electrified railways, automatic defect detection of diverse and plentiful fasteners on the catenary

  8. Dynamics of the deep-level emission in ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Dongchao; Rueckmann, Ilja; Voss, Tobias [Institut fuer Festkoerperphysik, Universitaet Bremen (Germany)

    2010-07-01

    Due to its wide direct band gap and large exciton binding energy (60 meV), ZnO nanowires possess an efficient near band-edge emission (NBE) in UV range. Additional energy levels in the band gap of ZnO, commonly introduced by point defects such as oxygen or zinc vacancies and Cu impurities, can largely weaken the UV emission by providing extra recombination routes for the electrons in conduction band. In ZnO nanowires this deep-level emission band (DLE) is expected to be largely activated by tunneling processes of holes trapped in the surface depletion layer after optical excitation. We studied the dependence of the DLE and NBE intensities of ZnO nanowires on the excitation power at different temperatures. For the experiments, the fundamental (1064 nm) and frequency-tripled (355 nm) pulses of an Nd:YAG microchip laser were used. The additional infrared laser radiation was used to directly populate the defect levels with electrons from the valence band. Our results show that the additional infrared photons lead to a reduction of the DLE while the NBE is enhanced. We discuss the implications of our results for the models of DLE in ZnO nanowires.

  9. Constant-resistance deep-level transient spectroscopy in Si and Ge JFET's

    International Nuclear Information System (INIS)

    Kolev, P.V.; Deen, J.

    1999-01-01

    The recently introduced constant-resistance deep-level transient spectroscopy (CR-DLTS) was successfully applied to study virgin and radiation-damaged junction field-effect transistors (JFET's). The authors have studied three groups of devices: commercially available-discrete silicon JFET's; virgin and exposed to high-level neutron radiation silicon JFET's, custom-made by using a monolithic technology; and commercially available discrete germanium p-channel JFET's. CR-DLTS is similar to both the conductance DLTs and to the constant-capacitance variation (CC-DLTS). Unlike the conductance and current DLTS, it is independent of the transistor size and does not require simultaneous measurement of the transconductance or the free-carrier mobility for calculation of the trap concentration. Compared to the CC-DLTS, it measures only the traps inside the gate-controlled part of the space charge region. Comparisons have also been made with the CC-DLTS and standard capacitance DLTS. In addition, possibilities for defect profiling in the channel have been demonstrated. CR-DLTS was found to be a simple, very sensitive, and device area-independent technique which is well suited for measurement of a wide range of deep level concentrations in transistors

  10. Human-level control through deep reinforcement learning

    Science.gov (United States)

    Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A.; Veness, Joel; Bellemare, Marc G.; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K.; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

    2015-02-01

    The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

  11. Human-level control through deep reinforcement learning.

    Science.gov (United States)

    Mnih, Volodymyr; Kavukcuoglu, Koray; Silver, David; Rusu, Andrei A; Veness, Joel; Bellemare, Marc G; Graves, Alex; Riedmiller, Martin; Fidjeland, Andreas K; Ostrovski, Georg; Petersen, Stig; Beattie, Charles; Sadik, Amir; Antonoglou, Ioannis; King, Helen; Kumaran, Dharshan; Wierstra, Daan; Legg, Shane; Hassabis, Demis

    2015-02-26

    The theory of reinforcement learning provides a normative account, deeply rooted in psychological and neuroscientific perspectives on animal behaviour, of how agents may optimize their control of an environment. To use reinforcement learning successfully in situations approaching real-world complexity, however, agents are confronted with a difficult task: they must derive efficient representations of the environment from high-dimensional sensory inputs, and use these to generalize past experience to new situations. Remarkably, humans and other animals seem to solve this problem through a harmonious combination of reinforcement learning and hierarchical sensory processing systems, the former evidenced by a wealth of neural data revealing notable parallels between the phasic signals emitted by dopaminergic neurons and temporal difference reinforcement learning algorithms. While reinforcement learning agents have achieved some successes in a variety of domains, their applicability has previously been limited to domains in which useful features can be handcrafted, or to domains with fully observed, low-dimensional state spaces. Here we use recent advances in training deep neural networks to develop a novel artificial agent, termed a deep Q-network, that can learn successful policies directly from high-dimensional sensory inputs using end-to-end reinforcement learning. We tested this agent on the challenging domain of classic Atari 2600 games. We demonstrate that the deep Q-network agent, receiving only the pixels and the game score as inputs, was able to surpass the performance of all previous algorithms and achieve a level comparable to that of a professional human games tester across a set of 49 games, using the same algorithm, network architecture and hyperparameters. This work bridges the divide between high-dimensional sensory inputs and actions, resulting in the first artificial agent that is capable of learning to excel at a diverse array of challenging tasks.

  12. Observation of new defect levels in nanodiamond membranes

    Czech Academy of Sciences Publication Activity Database

    Kravets, Roman; Johnston, K.; Potměšil, Jiří; Vorlíček, Vladimír; Rosa, Jan; Vaněček, Milan

    2005-01-01

    Roč. 202, č. 11 (2005), s. 2166-2170 ISSN 0031-8965 R&D Projects: GA ČR(CZ) GA202/05/2233; GA MŠk(CZ) LC510 Grant - others:Marie Curie Research Training Network, European Union, project DRIVE(XE) MRTN-CT-2004-512224 Institutional research plan: CEZ:AV0Z10100521 Keywords : nanocrystalline diamond * defects spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.041, year: 2005

  13. Temperature characterization of deep and shallow defect centers of low noise silicon JFETs

    International Nuclear Information System (INIS)

    Arnaboldi, Claudio; Fascilla, Andrea; Lund, M.W.; Pessina, Gianluigi

    2004-01-01

    We have selected different low noise JFET processes that have shown outstanding dynamic and noise performance at both room temperature and low temperatures. We have studied JFETs made with a process optimized for cryogenic operation, testing several devices of varying capacitance. For most of them, we have been able to detect the presence of shallow individual traps at low temperature which create low frequency (LF) Generation-Recombination (G-R) noise. For one device type no evidence of traps has been observed at the optimum temperature of operation (around 100 K). It had a very small residual LF noise. This device has been cooled down to 14 K. From below 100 K down to 14 K the noise was observed to increase due to G-R noise originating from donor atoms (dopants) inside the channel. A very simple theoretical interpretation confirms the nature of G-R noise from these very shallow trapping centers. We also studied devices from a process optimized for room temperature operation and found noise corresponding to the presence of a single deep level trap. Even for this circumstance the theory was experimentally confirmed. The measurement approach we used allowed us to achieve a very high accuracy in the modeling of the measured G-R noise. The ratio of the density of the atoms responsible for G-R noise above the doping concentration, N T /N d , has been verified with a sensitivity around 10 -7

  14. Preliminary analyses of the deep geoenvironmental characteristics for the deep borehole disposal of high-level radioactive waste in Korea

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Youl; Lee, Min Soo; Choi, Heui Joo; Kim, Geon Young; Kim, Kyung Su [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-06-15

    Spent fuels from nuclear power plants, as well as high-level radioactive waste from the recycling of spent fuels, should be safely isolated from human environment for an extremely long time. Recently, meaningful studies on the development of deep borehole radioactive waste disposal system in 3-5 km depth have been carried out in USA and some countries in Europe, due to great advance in deep borehole drilling technology. In this paper, domestic deep geoenvironmental characteristics are preliminarily investigated to analyze the applicability of deep borehole disposal technology in Korea. To do this, state-of-the art technologies in USA and some countries in Europe are reviewed, and geological and geothermal data from the deep boreholes for geothermal usage are analyzed. Based on the results on the crystalline rock depth, the geothermal gradient and the spent fuel types generated in Korea, a preliminary deep borehole concept including disposal canister and sealing system, is suggested.

  15. Preliminary analyses of the deep geoenvironmental characteristics for the deep borehole disposal of high-level radioactive waste in Korea

    International Nuclear Information System (INIS)

    Lee, Jong Youl; Lee, Min Soo; Choi, Heui Joo; Kim, Geon Young; Kim, Kyung Su

    2016-01-01

    Spent fuels from nuclear power plants, as well as high-level radioactive waste from the recycling of spent fuels, should be safely isolated from human environment for an extremely long time. Recently, meaningful studies on the development of deep borehole radioactive waste disposal system in 3-5 km depth have been carried out in USA and some countries in Europe, due to great advance in deep borehole drilling technology. In this paper, domestic deep geoenvironmental characteristics are preliminarily investigated to analyze the applicability of deep borehole disposal technology in Korea. To do this, state-of-the art technologies in USA and some countries in Europe are reviewed, and geological and geothermal data from the deep boreholes for geothermal usage are analyzed. Based on the results on the crystalline rock depth, the geothermal gradient and the spent fuel types generated in Korea, a preliminary deep borehole concept including disposal canister and sealing system, is suggested

  16. Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

    Science.gov (United States)

    Yoon, Yohan; Yan, Yixin; Ostrom, Nels P.; Kim, Jinwoo; Rozgonyi, George

    2012-11-01

    Continuous-Czochralski (c-Cz) crystal growth has been suggested as a viable technique for the fabrication of photovoltaic Si wafers due to its low resistivity variation of any dopant, independent of segregation, compared to conventional Cz. In order to eliminate light induced degradation due to boron-oxygen traps in conventional p-type silicon wafers, gallium doped wafers have been grown by c-Cz method and investigated using four point probe, deep level transient spectroscopy (DLTS), and microwave-photoconductance decay. Iron-gallium related electrically active defects were identified using DLTS as the main lifetime killers responsible for reduced non-uniform lifetimes in radial and axial positions of the c-Cz silicon ingot. A direct correlation between minority carrier lifetime and the concentration of electrically active Fe-Ga pairs was established.

  17. Deep levels in p-type InGaAsN lattice matched to GaAs

    International Nuclear Information System (INIS)

    Kwon, D.; Kaplar, R.J.; Ringel, S.A.; Allerman, A.A.; Kurtz, S.R.; Jones, E.D.

    1999-01-01

    Deep-level transient spectroscopy measurements were utilized to investigate deep-level defects in metal - organic chemical vapor deposition-grown, unintentionally doped p-type InGaAsN films lattice matched to GaAs. The as-grown material displayed a high concentration of deep levels distributed within the band gap, with a dominant hole trap at E v +0.10eV. Postgrowth annealing simplified the deep-level spectra, enabling the identification of three distinct hole traps at 0.10, 0.23, and 0.48 eV above the valence-band edge, with concentrations of 3.5x10 14 , 3.8x10 14 , and 8.2x10 14 cm -3 , respectively. A direct comparison between the as-grown and annealed spectra revealed the presence of an additional midgap hole trap, with a concentration of 4x10 14 cm -3 in the as-grown material. The concentration of this trap is sharply reduced by annealing, which correlates with improved material quality and minority-carrier properties after annealing. Of the four hole traps detected, only the 0.48 eV level is not influenced by annealing, suggesting this level may be important for processed InGaAsN devices in the future. copyright 1999 American Institute of Physics

  18. Formation of defects in tellurium at various levels of gravitation

    International Nuclear Information System (INIS)

    Parfen'ev, R.V.; Farbshtejn, I.I.; Shul'pina, I.L.; Yakimov, S.V.; Shalimov, V.P.; Turchaninov, A.M.

    2002-01-01

    One investigated into effect of gravitation conditions during tellurium crystallization (ranging from microgravitation up to increased gravitation - 5g 0 ) on concentration of neutral (N D ) and electrically active (N AD ) acceptor structure defects in specimens grown both under complete remelting of parent ingot and under directed recrystallization of ingot with inoculation. N AD and N D concentrations and their distribution along the specimen depth were determined on the basis of analysis of electrical characteristics (conductivity and the Hall effect) measured along ingots within 1.6-300 K temperature range. The results were compared with characteristics of specimens grown following the similar program under normal conditions. At complete remelting under microgravitation one detected attributes of strong supercooling and spontaneous crystallization, as well as, of specimen resistance oscillation by its depth caused by N D modulation [ru

  19. Single and double acceptor-levels of a carbon-hydrogen defect in n-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Stübner, R.; Scheffler, L.; Kolkovsky, Vl., E-mail: kolkov@ifpan.edu.pl; Weber, J. [Technische Universität Dresden, 01062 Dresden (Germany)

    2016-05-28

    In the present study, we discuss the origin of two dominant deep levels (E42 and E262) observed in n-type Si, which is subjected to hydrogenation by wet chemical etching or a dc H-plasma treatment. Their activation enthalpies determined from Laplace deep level transient spectroscopy measurements are E{sub C}-0.06 eV (E42) and E{sub C}-0.51 eV (E262). The similar annealing behavior and identical depth profiles of E42 and E262 correlate them with two different charge states of the same defect. E262 is attributed to a single acceptor state due to the absence of the Poole-Frenkel effect and the lack of a capture barrier for electrons. The emission rate of E42 shows a characteristic enhancement with the electric field, which is consistent with the assignment to a double acceptor state. In samples with different carbon and hydrogen content, the depth profiles of E262 can be explained by a defect with one H-atom and one C-atom. From a comparison with earlier calculations [Andersen et al., Phys. Rev. B 66, 235205 (2002)], we attribute E42 to the double acceptor and E262 to the single acceptor state of the CH{sub 1AB} configuration, where one H atom is directly bound to carbon in the anti-bonding position.

  20. Deep phenotyping of 89 xeroderma pigmentosum patients reveals unexpected heterogeneity dependent on the precise molecular defect

    Science.gov (United States)

    Fassihi, Hiva; Sethi, Mieran; Fawcett, Heather; Wing, Jonathan; Chandler, Natalie; Mohammed, Shehla; Craythorne, Emma; Morley, Ana M. S.; Lim, Rongxuan; Turner, Sally; Henshaw, Tanya; Garrood, Isabel; Giunti, Paola; Hedderly, Tammy; Abiona, Adesoji; Naik, Harsha; Harrop, Gemma; McGibbon, David; Jaspers, Nicolaas G. J.; Botta, Elena; Nardo, Tiziana; Stefanini, Miria; Young, Antony R.; Sarkany, Robert P. E.; Lehmann, Alan R.

    2016-01-01

    Xeroderma pigmentosum (XP) is a rare DNA repair disorder characterized by increased susceptibility to UV radiation (UVR)-induced skin pigmentation, skin cancers, ocular surface disease, and, in some patients, sunburn and neurological degeneration. Genetically, it is assigned to eight complementation groups (XP-A to -G and variant). For the last 5 y, the UK national multidisciplinary XP service has provided follow-up for 89 XP patients, representing most of the XP patients in the United Kingdom. Causative mutations, DNA repair levels, and more than 60 clinical variables relating to dermatology, ophthalmology, and neurology have been measured, using scoring systems to categorize disease severity. This deep phenotyping has revealed unanticipated heterogeneity of clinical features, between and within complementation groups. Skin cancer is most common in XP-C, XP-E, and XP-V patients, previously considered to be the milder groups based on cellular analyses. These patients have normal sunburn reactions and are therefore diagnosed later and are less likely to adhere to UVR protection. XP-C patients are specifically hypersensitive to ocular damage, and XP-F and XP-G patients appear to be much less susceptible to skin cancer than other XP groups. Within XP groups, different mutations confer susceptibility or resistance to neurological damage. Our findings on this large cohort of XP patients under long-term follow-up reveal that XP is more heterogeneous than has previously been appreciated. Our data now enable provision of personalized prognostic information and management advice for each XP patient, as well as providing new insights into the functions of the XP proteins. PMID:26884178

  1. Changes in Serum Natriuretic Peptide Levels after Percutaneous Closure of Small to Moderate Ventricular Septal Defects

    Directory of Open Access Journals (Sweden)

    Yuksel Kaya

    2012-01-01

    Full Text Available Background. B-type natriuretic peptide has been shown to be a very sensitive and specific marker of heart failure. In this study, we aimed to investigate the effect of percutaneous closure of ventricular septal defects with Amplatzer septal occluders on brain natriuretic peptide levels. Methods. Between 2008 and 2011, 23 patients underwent successfully percutaneous ventricular septal defect closure in 4 cardiology centers. Brain natriuretic peptide levels were measured in nine patients (4 male, mean ages were 25.3±14.3 who underwent percutaneous closure with Amplatzer occluders for membranous or muscular ventricular septal defects were enrolled in the study. Brain natriuretic peptide levels were measured one day before and one month after the closure. Patients were evaluated clinically and by echocardiography one month after the procedure. Results. Percutaneous closures of ventricular septal defects were successfully performed in all patients. There was not any significant adverse event in patients group during followup. Decrease in brain natriuretic peptide levels after closure were statistically significant (97.3±78.6 versus 26.8±15.6, =0.013. Conclusion. Brain Natriuretic Peptide levels are elevated in patients with ventricular septal defects as compared to controls. Percutaneous closure of Ventricular Septal Defect with Amplatzer occluders decreases the BNP levels.

  2. Ultrafast carrier dynamics in band edge and broad deep defect emission ZnSe nanowires

    Science.gov (United States)

    Othonos, Andreas; Lioudakis, Emmanouil; Philipose, U.; Ruda, Harry E.

    2007-12-01

    Ultrafast carrier dynamics of ZnSe nanowires grown under different growth conditions have been studied. Transient absorption measurements reveal the dependence of the competing effects of state filling and photoinduced absorption on the probed energy states. The relaxation of the photogenerated carriers occupying defect states in the stoichiometric and Se-rich samples are single exponentials with time constants of 3-4ps. State filling is the main contribution for probe energies below 1.85eV in the Zn-rich grown sample. This ultrafast carrier dynamics study provides an important insight into the role that intrinsic point defects play in the observed photoluminescence from ZnSe nanowires.

  3. Effect of swift heavy ion irradiation on deep levels in Au /n-Si (100) Schottky diode studied by deep level transient spectroscopy

    Science.gov (United States)

    Kumar, Sandeep; Katharria, Y. S.; Kumar, Sugam; Kanjilal, D.

    2007-12-01

    In situ deep level transient spectroscopy has been applied to investigate the influence of 100MeV Si7+ ion irradiation on the deep levels present in Au/n-Si (100) Schottky structure in a wide fluence range from 5×109to1×1012ions cm-2. The swift heavy ion irradiation introduces a deep level at Ec-0.32eV. It is found that initially, trap level concentration of the energy level at Ec-0.40eV increases with irradiation up to a fluence value of 1×1010cm-2 while the deep level concentration decreases as irradiation fluence increases beyond the fluence value of 5×1010cm-2. These results are discussed, taking into account the role of energy transfer mechanism of high energy ions in material.

  4. Fermi level dependent native defect formation: Consequences for metal-semiconductor and semiconductor-semiconductor interfaces

    International Nuclear Information System (INIS)

    Walukiewicz, W.

    1988-02-01

    The amphoteric native defect model of the Schottky barrier formation is used to analyze the Fermi level pinning at metal/semiconductor interfaces for submonolayer metal coverages. It is assumed that the energy required for defect generation is released in the process of surface back-relaxation. Model calculations for metal/GaAs interfaces show a weak dependence of the Fermi level pinning on the thickness of metal deposited at room temperature. This weak dependence indicates a strong dependence of the defect formation energy on the Fermi level, a unique feature of amphoteric native defects. This result is in very good agreement with experimental data. It is shown that a very distinct asymmetry in the Fermi level pinning on p- and n-type GaAs observed at liquid nitrogen temperatures can be understood in terms of much different recombination rates for amphoteric native defects in those two types of materials. Also, it is demonstrated that the Fermi level stabilization energy, a central concept of the amphoteric defect system, plays a fundamental role in other phenomena in semiconductors such as semiconductor/semiconductor heterointerface intermixing and saturation of free carrier concentration. 33 refs., 6 figs

  5. Convolutional Neural Networks for Text Categorization: Shallow Word-level vs. Deep Character-level

    OpenAIRE

    Johnson, Rie; Zhang, Tong

    2016-01-01

    This paper reports the performances of shallow word-level convolutional neural networks (CNN), our earlier work (2015), on the eight datasets with relatively large training data that were used for testing the very deep character-level CNN in Conneau et al. (2016). Our findings are as follows. The shallow word-level CNNs achieve better error rates than the error rates reported in Conneau et al., though the results should be interpreted with some consideration due to the unique pre-processing o...

  6. Surface-Level Diversity and Decision-Making in Groups: When Does Deep-Level Similarity Help?

    OpenAIRE

    2006-01-01

    Abstract We examined how surface-level diversity (based on race) and deep-level similarities influenced three-person decision-making groups on a hidden-profile task. Surface-level homogeneous groups perceived their information to be less unique and spent less time on the task than surface-level diverse groups. When the groups were given the opportunity to learn about their deep-level similarities prior to t...

  7. Vacancies and defect levels in III–V semiconductors

    KAUST Repository

    Tahini, H. A.

    2013-08-13

    Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges ( −3≤q≤3 ) as a function of the Fermi level and under different growth conditions. The formation energies were corrected using the scheme due to Freysoldt et al. [Phys. Rev. Lett. 102, 016402 (2009)] to account for finite size effects. Vacancy formation energies were found to decrease as the size of the group V atom increased. This trend was maintained for Al-V, Ga-V, and In-V compounds. The negative-U effect was only observed for the arsenic vacancy in GaAs, which makes a charge state transition from +1 to –1. It is also found that even under group III rich conditions, group III vacancies dominate in AlSb and GaSb. For InSb, group V vacancies are favoured even under group V rich conditions.

  8. Vacancies and defect levels in III–V semiconductors

    KAUST Repository

    Tahini, H. A.; Chroneos, Alexander; Grimes, R. W.; Murphy, S. T.; Schwingenschlö gl, Udo

    2013-01-01

    Using electronic structure calculations, we systematically investigate the formation of vacancies in III-V semiconductors (III = Al, Ga, and In and V = P, As, and Sb), for a range of charges ( −3≤q≤3 ) as a function of the Fermi level and under different growth conditions. The formation energies were corrected using the scheme due to Freysoldt et al. [Phys. Rev. Lett. 102, 016402 (2009)] to account for finite size effects. Vacancy formation energies were found to decrease as the size of the group V atom increased. This trend was maintained for Al-V, Ga-V, and In-V compounds. The negative-U effect was only observed for the arsenic vacancy in GaAs, which makes a charge state transition from +1 to –1. It is also found that even under group III rich conditions, group III vacancies dominate in AlSb and GaSb. For InSb, group V vacancies are favoured even under group V rich conditions.

  9. Decadal trends in deep ocean salinity and regional effects on steric sea level

    Science.gov (United States)

    Purkey, S. G.; Llovel, W.

    2017-12-01

    We present deep (below 2000 m) and abyssal (below 4000 m) global ocean salinity trends from the 1990s through the 2010s and assess the role of deep salinity in local and global sea level budgets. Deep salinity trends are assessed using all deep basins with available full-depth, high-quality hydrographic section data that have been occupied two or more times since the 1980s through either the World Ocean Circulation Experiment (WOCE) Hydrographic Program or the Global Ship-Based Hydrographic Investigations Program (GO-SHIP). All salinity data is calibrated to standard seawater and any intercruise offsets applied. While the global mean deep halosteric contribution to sea level rise is close to zero (-0.017 +/- 0.023 mm/yr below 4000 m), there is a large regional variability with the southern deep basins becoming fresher and northern deep basins becoming more saline. This meridional gradient in the deep salinity trend reflects different mechanisms driving the deep salinity variability. The deep Southern Ocean is freshening owing to a recent increased flux of freshwater to the deep ocean. Outside of the Southern Ocean, the deep salinity and temperature changes are tied to isopycnal heave associated with a falling of deep isopycnals in recent decades. Therefore, regions of the ocean with a deep salinity minimum are experiencing both a halosteric contraction with a thermosteric expansion. While the thermosteric expansion is larger in most cases, in some regions the halosteric compensates for as much as 50% of the deep thermal expansion, making a significant contribution to local sea level rise budgets.

  10. Defects level evaluation of LiTiZn ferrite ceramics using temperature dependence of initial permeability

    Science.gov (United States)

    Malyshev, A. V.; Petrova, A. B.; Sokolovskiy, A. N.; Surzhikov, A. P.

    2018-06-01

    The method for evaluating the integral defects level and chemical homogeneity of ferrite ceramics based on temperature dependence analysis of initial permeability is suggested. A phenomenological expression for the description of such dependence was suggested and an interpretation of its main parameters was given. It was shown, that the main criterion of the integral defects level of ferrite ceramics is relation of two parameters correlating with elastic stress value in a material. An indicator of structural perfection can be a maximum value of initial permeability close to Curie point as well. The temperature dependences of initial permeability have analyzed for samples sintered in laboratory conditions and for the ferrite industrial product. The proposed method allows controlling integral defects level of the soft ferrite products and has high sensitivity compare to typical X-ray methods.

  11. Correlation between defect transition levels and thermoelectric operational temperature of doped CrSi2

    Science.gov (United States)

    Singh, Abhishek; Pandey, Tribhuwan

    2014-03-01

    The performance of a thermoelectric material is quantified by figure of merit ZT. The challenge in achieving high ZT value requires simultaneously high thermopower, high electrical conductivity and low thermal conductivity at optimal carrier concentration. So far doping is the most versatile approach used for modifying thermoelectric properties. Previous studies have shown that doping can significantly improve the thermoelectric performance, however the tuning the operating temperature of a thermoelectric device is a main issue. Using first principles density functional theory, we report for CrSi2, a linear relationship between thermodynamic charge state transition levels of defects and temperature at which thermopower peaks. We show for doped CrSi2 that the peak of thermopower occurs at the temperature Tm, which corresponds to the position of defect transition level. Therefore, by modifying the defect transition level, a thermoelectric material with a given operational temperature can be designed. The authors thankfully acknowledge support from ADA under NpMASS.

  12. Using Deep Learning Techniques to Forecast Environmental Consumption Level

    Directory of Open Access Journals (Sweden)

    Donghyun Lee

    2017-10-01

    Full Text Available Artificial intelligence is a promising futuristic concept in the field of science and technology, and is widely used in new industries. The deep-learning technology leads to performance enhancement and generalization of artificial intelligence technology. The global leader in the field of information technology has declared its intention to utilize the deep-learning technology to solve environmental problems such as climate change, but few environmental applications have so far been developed. This study uses deep-learning technologies in the environmental field to predict the status of pro-environmental consumption. We predicted the pro-environmental consumption index based on Google search query data, using a recurrent neural network (RNN model. To verify the accuracy of the index, we compared the prediction accuracy of the RNN model with that of the ordinary least square and artificial neural network models. The RNN model predicts the pro-environmental consumption index better than any other model. We expect the RNN model to perform still better in a big data environment because the deep-learning technologies would be increasingly sophisticated as the volume of data grows. Moreover, the framework of this study could be useful in environmental forecasting to prevent damage caused by climate change.

  13. Effect of irradiation temperature and initial crystal doping level on defect creation efficiency in silicon

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Markevich, V.P.; Medvedeva, I.F.; Murin, L.I.

    1990-01-01

    The defect creation processes in n-type silicon irradiated by 60 Co gamma-rays or fast electrons (E = 4 MeV) have been investigated. Using electrical measurements the dependences of introduction efficiencies of the main radiation defects (A-, E-centres, carbon-related complexes) on the irradiation temperature (T irr = 77-470 K) and material doping level (N h = 2 x 10 12 - 2 x 10 15 cm -3 ) are obtained. It is shown that the efficiency of these defects formation is conditioned by the probability of the Frenkel pairs separation and depends strongly on the Fermi level position in crystals being irradiated. 9 refs.; 3 figs.; 1 tab

  14. Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors

    Science.gov (United States)

    Wang, Chong; Simoen, Eddy; Zhao, Ming; Li, Wei

    2017-10-01

    Deep levels formed under different growth conditions of a 200 nm AlN buffer layer on B-doped Czochralski Si(111) substrates with different resistivity were investigated by deep-level transient spectroscopy (DLTS) on metal-insulator-semiconductor capacitors. Growth-temperature-dependent Al diffusion in the Si substrate was derived from the free carrier density obtained by capacitance-voltage measurement on samples grown on p- substrates. The DLTS spectra revealed a high concentration of point and extended defects in the p- and p+ silicon substrates, respectively. This indicated a difference in the electrically active defects in the silicon substrate close to the AlN/Si interface, depending on the B doping concentration.

  15. Leveling coatings for reducing the atomic oxygen defect density in protected graphite fiber epoxy composites

    Science.gov (United States)

    Jaworske, D. A.; Degroh, Kim K.; Podojil, G.; McCollum, T.; Anzic, J.

    1992-11-01

    Pinholes or other defect sites in a protective oxide coating provide pathways for atomic oxygen in low Earth orbit to reach underlying material. One concept of enhancing the lifetime of materials in low Earth orbit is to apply a leveling coating to the material prior to applying any reflective and protective coatings. Using a surface tension leveling coating concept, a low viscosity epoxy was applied to the surface of several composite coupons. A protective layer of 1000 A of SiO2 was deposited on top of the leveling coating, and the coupons were exposed to an atomic oxygen environment in a plasma asher. Pinhole populations per unit area were estimated by counting the number of undercut sites observed by scanning electron microscopy. Defect density values of 180,000 defects/sq cm were reduced to about 1000 defects/sq cm as a result of the applied leveling coating. These improvements occur at a mass penalty of about 2.5 mg/sq cm.

  16. Tuning of deep level emission in highly oriented electrodeposited ZnO nanorods by post growth annealing treatments

    International Nuclear Information System (INIS)

    Simimol, A.; Manikandanath, N. T.; Chowdhury, Prasanta; Barshilia, Harish C.; Anappara, Aji A.

    2014-01-01

    Highly dense and c-axis oriented zinc oxide (ZnO) nanorods with hexagonal wurtzite facets were deposited on fluorine doped tin oxide coated glass substrates by a simple and cost-effective electrodeposition method at low bath temperature (80 °C). The as-grown samples were then annealed at various temperatures (T A  = 100–500 °C) in different environments (e.g., zinc, oxygen, air, and vacuum) to understand their photoluminescence (PL) behavior in the ultra-violet (UV) and the visible regions. The PL results revealed that the as-deposited ZnO nanorods consisted of oxygen vacancy (V O ), zinc interstitial (Zn i ), and oxygen interstitial (O i ) defects and these can be reduced significantly by annealing in different environments at optimal annealing temperatures. However, the intensity of deep level emission increased for T A greater than the optimized values for the respective environments due to the introduction of various defect centers. For example, for T A  ≥ 450 °C in the oxygen and air environments, the density of O i defects increased, whereas, the green emission associated with V O is dominant in the vacuum annealed (T A  = 500 °C) ZnO nanorods. The UV peak red shifted after the post-growth annealing treatments in all the environments and the vacuum annealed sample exhibited highest UV peak intensity. The observations from the PL data are supported by the micro-Raman spectroscopy. The present study gives new insight into the origin of different defects that exist in the electrodeposited ZnO nanorods and how these defects can be precisely controlled in order to get the desired emissions for the opto-electronic applications

  17. Defect identification using positrons

    International Nuclear Information System (INIS)

    Beling, C.D.; Fung, S.

    2001-01-01

    The current use of the lifetime and Doppler broadening techniques in defect identification is demonstrated with two studies, the first being the identification of carbon vacancy in n-6H SiC through lifetime spectroscopy, and the second the production of de-hydrogenated voids in α-Si:H through light soaking. Some less conventional ideas are presented for more specific defect identification, namely (i) the amalgamation of lifetime and Doppler techniques with conventional deep level transient spectroscopy in what may be called ''positron-deep level transient spectroscopy'', and (ii) the extraction of more spatial information on vacancy defects by means of what may be called ''Fourier transform Doppler broadening of annihilation radiation spectroscopy'' (orig.)

  18. Deep Levels of Processing Elicit a Distinctiveness Heuristic: Evidence from the Criterial Recollection Task

    Science.gov (United States)

    Gallo, David A.; Meadow, Nathaniel G.; Johnson, Elizabeth L.; Foster, Katherine T.

    2008-01-01

    Thinking about the meaning of studied words (deep processing) enhances memory on typical recognition tests, relative to focusing on perceptual features (shallow processing). One explanation for this levels-of-processing effect is that deep processing leads to the encoding of more distinctive representations (i.e., more unique semantic or…

  19. Deep-level transient spectroscopy on an amorphous InGaZnO4 Schottky diode

    NARCIS (Netherlands)

    Chasin, A.; Simoen, E.; Bhoolokam, A.; Nag, M.; Genoe, J.; Gielen, G.; Heremans, P.

    2014-01-01

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier

  20. Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level.

    Science.gov (United States)

    Vines, L; Bhoodoo, C; von Wenckstern, H; Grundmann, M

    2017-12-13

    The evolution of sheet resistance of n-type In 2 O 3 and Ga 2 O 3 exposed to bombardment with MeV 12 C and 28 Si ions at 35 K is studied in situ. While the sheet resistance of Ga 2 O 3 increased by more than eight orders of magnitude as a result of ion irradiation, In 2 O 3 showed a more complex defect evolution and became more conductive when irradiated at the highest doses. Heating up to room temperature reduced the sheet resistivity somewhat, but Ga 2 O 3 remained highly resistive, while In 2 O 3 showed a lower resistance than as deposited samples. Thermal admittance spectroscopy and deep level transient spectroscopy did not reveal new defect levels for irradiation up to [Formula: see text] cm -2 . A model where larger defect complexes preferentially produce donor like defects in In 2 O 3 is proposed, and may reveal a microscopic view of a charge neutrality level within the conduction band, as previously proposed.

  1. Electrical conductivity of In2O3 and Ga2O3 after low temperature ion irradiation; implications for instrinsic defect formation and charge neutrality level

    Science.gov (United States)

    Vines, L.; Bhoodoo, C.; von Wenckstern, H.; Grundmann, M.

    2018-01-01

    The evolution of sheet resistance of n-type In2O3 and Ga2O3 exposed to bombardment with MeV 12C and 28Si ions at 35 K is studied in situ. While the sheet resistance of Ga2O3 increased by more than eight orders of magnitude as a result of ion irradiation, In2O3 showed a more complex defect evolution and became more conductive when irradiated at the highest doses. Heating up to room temperature reduced the sheet resistivity somewhat, but Ga2O3 remained highly resistive, while In2O3 showed a lower resistance than as deposited samples. Thermal admittance spectroscopy and deep level transient spectroscopy did not reveal new defect levels for irradiation up to 2 × 1012 cm-2. A model where larger defect complexes preferentially produce donor like defects in In2O3 is proposed, and may reveal a microscopic view of a charge neutrality level within the conduction band, as previously proposed.

  2. Association between risk of birth defects occurring level and arsenic concentrations in soils of Lvliang, Shanxi province of China

    International Nuclear Information System (INIS)

    Wu, Jilei; Zhang, Chaosheng; Pei, Lijun; Chen, Gong; Zheng, Xiaoying

    2014-01-01

    The risk of birth defects is generally accredited with genetic factors, environmental causes, but the contribution of environmental factors to birth defects is still inconclusive. With the hypothesis of associations of geochemical features distribution and birth defects risk, we collected birth records and measured the chemical components in soil samples from a high prevalence area of birth defects in Shanxi province, China. The relative risk levels among villages were estimated with conditional spatial autoregressive model and the relationships between the risk levels of the villages and the 15 types of chemical elements concentration in the cropland and woodland soils were explored. The results revealed that the arsenic levels in cropland soil showed a significant association with birth defects occurring risk in this area, which is consistent with existing evidences of arsenic as a teratogen and warrants further investigation on arsenic exposure routine to birth defect occurring risk. - Highlights: • Association between soil geochemical components and birth defects risk was proposed. • The relative risk difference among villages were estimated with CAR model. • Arsenic levels in cropland showed a significant association to birth defect risk. • The finding warrants further investigation on arsenic as a teratogen. - The difference of risk levels estimate by spatial statistics to birth defect significantly associated with arsenic levels in cropland soils warrants further investigation

  3. Setup for in situ deep level transient spectroscopy of semiconductors during swift heavy ion irradiation.

    Science.gov (United States)

    Kumar, Sandeep; Kumar, Sugam; Katharria, Y S; Safvan, C P; Kanjilal, D

    2008-05-01

    A computerized system for in situ deep level characterization during irradiation in semiconductors has been set up and tested in the beam line for materials science studies of the 15 MV Pelletron accelerator at the Inter-University Accelerator Centre, New Delhi. This is a new facility for in situ irradiation-induced deep level studies, available in the beam line of an accelerator laboratory. It is based on the well-known deep level transient spectroscopy (DLTS) technique. High versatility for data manipulation is achieved through multifunction data acquisition card and LABVIEW. In situ DLTS studies of deep levels produced by impact of 100 MeV Si ions on Aun-Si(100) Schottky barrier diode are presented to illustrate performance of the automated DLTS facility in the beam line.

  4. PC operated acoustic transient spectroscopy of deep levels in MIS structures

    International Nuclear Information System (INIS)

    Bury, P.; Jamnicky, I.

    1996-01-01

    A new version of acoustic deep-level transient spectroscopy is presented to study the traps at the insulator-semiconductor interface. The acoustic deep-level transient spectroscopy uses an acoustoelectric response signal produced by the MIS structure interface when a longitudinal acoustic wave propagates through a structure. The acoustoelectric response signal is extremely sensitive to external conditions of the structure and reflects any changes in the charge distribution, connected also with charged traps. In comparison with previous version of acoustic deep-level transient spectroscopy that closely coincides with the principle of the original deep-level transient spectroscopy technique, the present technique is based on the computer-evaluated isothermal transients and represents an improved, more efficient and time saving technique. Many tests on the software used for calculation as well as on experimental setup have been performed. The improved acoustic deep-level transient spectroscopy method has been applied for the Si(p) MIS structures. The deep-level parameters as activation energy and capture cross-section have been determined. (authors)

  5. Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

    Science.gov (United States)

    García, H.; Castán, H.; Dueñas, S.; García-Hemme, E.; García-Hernansaz, R.; Montero, D.; González-Díaz, G.

    2018-03-01

    Intermediate-band semiconductors have attracted much attention for use in silicon-based solar cells and infrared detectors. In this work, n-Si substrates have been implanted with very high doses (1013 cm-2 and 1014 cm-2) of vanadium, which gives rise to a supersaturated layer inside the semiconductor. However, the Mott limit was not exceeded. The energy levels created in the supersaturated silicon were studied in detail by means of thermal admittance spectroscopy. We found a single deep center at energy near E C - 200 meV. This value agrees with one of the levels found for vanadium in silicon. The capture cross-section values of the deep levels were also calculated, and we found a relationship between the capture cross-section and the energy position of the deep levels which follows the Meyer-Neldel rule. This process usually appears in processes involving multiple excitations. The Meyer-Neldel energy values agree with those previously obtained for silicon supersaturated with titanium and for silicon contaminated with iron.

  6. A deep level set method for image segmentation

    OpenAIRE

    Tang, Min; Valipour, Sepehr; Zhang, Zichen Vincent; Cobzas, Dana; MartinJagersand

    2017-01-01

    This paper proposes a novel image segmentation approachthat integrates fully convolutional networks (FCNs) with a level setmodel. Compared with a FCN, the integrated method can incorporatesmoothing and prior information to achieve an accurate segmentation.Furthermore, different than using the level set model as a post-processingtool, we integrate it into the training phase to fine-tune the FCN. Thisallows the use of unlabeled data during training in a semi-supervisedsetting. Using two types o...

  7. Distinction between the Poole-Frenkel and tunneling models of electric-field-stimulated carrier emission from deep levels in semiconductors

    International Nuclear Information System (INIS)

    Ganichev, S. D.; Ziemann, E.; Prettl, W.; Yassievich, I. N.; Istratov, A. A.; Weber, E. R.

    2000-01-01

    The enhancement of the emission rate of charge carriers from deep-level defects in electric field is routinely used to determine the charge state of the defects. However, only a limited number of defects can be satisfactorily described by the Poole-Frenkel theory. An electric field dependence different from that expected from the Poole-Frenkel theory has been repeatedly reported in the literature, and no unambiguous identification of the charge state of the defect could be made. In this article, the electric field dependencies of emission of carriers from DX centers in Al x Ga 1-x As:Te, Cu pairs in silicon, and Ge:Hg have been studied applying static and terahertz electric fields, and analyzed by using the models of Poole-Frenkel and phonon assisted tunneling. It is shown that phonon assisted tunneling and Poole-Frenkel emission are two competitive mechanisms of enhancement of emission of carriers, and their relative contribution is determined by the charge state of the defect and by the electric-field strength. At high-electric field strengths carrier emission is dominated by tunneling independently of the charge state of the impurity. For neutral impurities, where Poole-Frenkel lowering of the emission barrier does not occur, the phonon assisted tunneling model describes well the experimental data also in the low-field region. For charged impurities the transition from phonon assisted tunneling at high fields to Poole-Frenkel effect at low fields can be traced back. It is suggested that the Poole-Frenkel and tunneling models can be distinguished by plotting logarithm of the emission rate against the square root or against the square of the electric field, respectively. This analysis enables one to unambiguously determine the charge state of a deep-level defect. (c) 2000 The American Physical Society

  8. Ultrasonographic views for the screening of congenital heart defects in the first level of care

    International Nuclear Information System (INIS)

    Garcia Guevara, Carlos; Arenciabia Faife, Jakeline; Ley Vega, Lisset

    2009-01-01

    Congenital heart diseases are the main cause of infant mortality for congenital malformations in our country and they are the defects that more usually escape diagnosis in ultrasonographic screening, especially if we consider that associated risk factors call for a fetal echocardiogram are not identified in most pregnant women with fetuses affected with a heart disease. With this paper, we intend to bring within reach of both the specialists dedicated to this activity in primary care and the Masters in Genetic Counseling a review article about the principal aspects to be evaluated in each of the three echocardiography views that are used in Cuba as part of screening these defects, as well as the main signs of suspicion of congenital heart diseases that give reason for having a pregnant woman referred to the immediately higher level of care

  9. Defect spectroscopy of single ZnO microwires

    Science.gov (United States)

    Villafuerte, M.; Ferreyra, J. M.; Zapata, C.; Barzola-Quiquia, J.; Iikawa, F.; Esquinazi, P.; Heluani, S. P.; de Lima, M. M.; Cantarero, A.

    2014-04-01

    The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 × 1018 cm-3. This combination of techniques allows us to study the band gap values and defects states inside the gap in single ZnO microwires and opens the possibility to be used as a defect spectroscopy method.

  10. Deep-level transient spectroscopy of TiO2/CuInS2 heterojunctions

    NARCIS (Netherlands)

    Nanu, M.; Boulch, F.; Schoonman, J.; Goossens, A.

    2005-01-01

    Deep-level transient spectroscopy (DLTS) has been used to measure the concentration and energy position of deep electronic states in CuInS2. Flat TiO2?CuInS2 heterojunctions as well as TiO2-CuInS2 nanocomposites have been investigated. Subband-gap electronic states in CuInS2 films are mostly due to

  11. Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy

    International Nuclear Information System (INIS)

    Chung, Sung-Yong; Jin, Niu; Rice, Anthony T.; Berger, Paul R.; Yu, Ronghua; Fang, Z-Q.; Thompson, Phillip E.

    2003-01-01

    Deep-level transient spectroscopy measurements were performed in order to investigate the effects of substrate growth temperature and dopant species on deep levels in Si layers during low-temperature molecular beam epitaxial growth. The structures studied were n + -p junctions using B doping for the p layer and p + -n junctions using P doping for the n layer. While the density of hole traps H1 (0.38-0.41 eV) in the B-doped p layers showed a clear increase with decreasing growth temperature from 600 to 370 degree sign C, the electron trap density was relatively constant. Interestingly, the minority carrier electron traps E1 (0.42-0.45 eV) and E2 (0.257 eV), found in the B-doped p layers, are similar to the majority carrier electron traps E11 (0.48 eV) and E22 (0.269 eV) observed in P-doped n layers grown at 600 degree sign C. It is hypothesized that these dominating electron traps are associated with pure divacancy defects and are independent of the dopant species

  12. Reduced heme levels underlie the exponential growth defect of the Shewanella oneidensis hfq mutant.

    Directory of Open Access Journals (Sweden)

    Christopher M Brennan

    Full Text Available The RNA chaperone Hfq fulfills important roles in small regulatory RNA (sRNA function in many bacteria. Loss of Hfq in the dissimilatory metal reducing bacterium Shewanella oneidensis strain MR-1 results in slow exponential phase growth and a reduced terminal cell density at stationary phase. We have found that the exponential phase growth defect of the hfq mutant in LB is the result of reduced heme levels. Both heme levels and exponential phase growth of the hfq mutant can be completely restored by supplementing LB medium with 5-aminolevulinic acid (5-ALA, the first committed intermediate synthesized during heme synthesis. Increasing expression of gtrA, which encodes the enzyme that catalyzes the first step in heme biosynthesis, also restores heme levels and exponential phase growth of the hfq mutant. Taken together, our data indicate that reduced heme levels are responsible for the exponential growth defect of the S. oneidensis hfq mutant in LB medium and suggest that the S. oneidensis hfq mutant is deficient in heme production at the 5-ALA synthesis step.

  13. The Effects of Test Anxiety on Learning at Superficial and Deep Levels of Processing.

    Science.gov (United States)

    Weinstein, Claire E.; And Others

    1982-01-01

    Using a deep-level processing strategy, low test-anxious college students performed significantly better than high test-anxious students in learning a paired-associate word list. Using a superficial-level processing strategy resulted in no significant difference in performance. A cognitive-attentional theory and test anxiety mechanisms are…

  14. Impact of proton irradiation on deep level states in n-GaN

    International Nuclear Information System (INIS)

    Zhang, Z.; Arehart, A. R.; Cinkilic, E.; Ringel, S. A.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; McSkimming, B.; Speck, J. S.

    2013-01-01

    Deep levels in 1.8 MeV proton irradiated n-type GaN were systematically characterized using deep level transient spectroscopies and deep level optical spectroscopies. The impacts of proton irradiation on the introduction and evolution of those deep states were revealed as a function of proton fluences up to 1.1 × 10 13 cm −2 . The proton irradiation introduced two traps with activation energies of E C - 0.13 eV and 0.16 eV, and a monotonic increase in the concentration for most of the pre-existing traps, though the increase rates were different for each trap, suggesting different physical sources and/or configurations for these states. Through lighted capacitance voltage measurements, the deep levels at E C - 1.25 eV, 2.50 eV, and 3.25 eV were identified as being the source of systematic carrier removal in proton-damaged n-GaN as a function of proton fluence

  15. DLTS study of annihilation of oxidation induced deep-level defects ...

    Indian Academy of Sciences (India)

    Administrator

    microelectronics device technologies. As technology is ... an important role in manufacturing high-speed electronic ... DLTS is a capacitance transient thermal scanning tech- ... again dipped in methanol and dried using nitrogen gun. A.

  16. Distinguishing bulk traps and interface states in deep-level transient spectroscopy

    International Nuclear Information System (INIS)

    Coelho, A V P; Adam, M C; Boudinov, H

    2011-01-01

    A new method for the distinction of discrete bulk deep levels and interface states related peaks in deep-level transient spectroscopy spectra is proposed. The measurement of two spectra using different reverse voltages while keeping pulse voltage fixed causes different peak maximum shifts in each case: for a reverse voltage modulus increase, a bulk deep-level related peak maximum will remain unchanged or shift towards lower temperatures while only interface states related peak maximum will be able to shift towards higher temperatures. This method has the advantage of being non-destructive and also works in the case of bulk traps with strong emission rate dependence on the electric field. Silicon MOS capacitors and proton implanted GaAs Schottky diodes were employed to experimentally test the method.

  17. Defect level characterization of silicon nanowire arrays: Towards novel experimental paradigms

    Energy Technology Data Exchange (ETDEWEB)

    Carapezzi, Stefania; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, V.le Berti Pichat 6/2, Bologna (Italy); Irrera, Alessia [IPCF CNR, Viale Stagno D' Alcontres n. 37-98158, Messina, Italy and MATIS IMM CNR, Viale Santa Sofia n. 64, 95123 Catania (Italy)

    2014-02-21

    The huge amount of knowledge, and infrastructures, brought by silicon (Si) technology, make Si Nanowires (NWs) an ideal choice for nano-electronic Si-based devices. This, in turn, challenges the scientific research to adapt the technical and theoretical paradigms, at the base of established experimental techniques, in order to probe the properties of these systems. Metal-assisted wet-Chemical Etching (MaCE) [1, 2] is a promising fast, easy and cheap method to grow high aspect-ratio aligned Si NWs. Further, contrary to other fabrication methods, this method avoids the possible detrimental effects related to Au diffusion into NWs. We investigated the bandgap level diagram of MaCE Si NW arrays, phosphorous-doped, by means of Deep Level Transient Spectroscopy. The presence of both shallow and deep levels has been detected. The results have been examined in the light of the specificity of the MaCE growth. The study of the electronic levels in Si NWs is, of course, of capital importance in view of the integration of Si NW arrays as active layers in actual devices.

  18. Decreased blood riboflavin levels are correlated with defective expression of RFT2 gene in gastric cancer

    Science.gov (United States)

    Eli, Maynur; Li, De-Sheng; Zhang, Wei-Wei; Kong, Bing; Du, Chen-Song; Wumar, Maimaitiaili; Mamtimin, Batur; Sheyhidin, Ilyar; Hasim, Ayshamgul

    2012-01-01

    AIM: To investigate the relationship between blood riboflavin levels and riboflavin transporter 2 (RFT2) gene expression in gastric carcinoma (GC) development. METHODS: High-performance liquid chromatography was used to detect blood riboflavin levels in patients with GC. Real-time fluorogenic quantitative polymerase chain reaction and immunohistochemistry were used to analyze the expression of RFT2 mRNA and protein in samples from 60 GC patients consisting of both tumor and normal tissue. RESULTS: A significant decrease in the RFT2 mRNA levels was detected in GC samples compared with those in the normal mucous membrane (0.398 ± 0.149 vs 1.479 ± 0.587; P = 0.040). Tumors exhibited low RFT2 protein expression (75%, 16.7%, 8.3% and 0% for no RFT2 staining, weak staining, medium staining and strong staining, respectively), which was significantly lower than that in the normal mucous membrane (10%, 16.7%, 26.7% and 46.7% for no RFT2 staining, weak staining, medium staining and strong staining, respectively; P riboflavin levels were reverse correlated with development of GC (1.2000 ± 0.97 569 ng/mL in high tumor stage patients vs 2.5980 ± 1.31 129 ng/mL in low tumor stage patients; P riboflavin levels with defective expression of RFT2 protein was found in GC patients (χ2 = 2.619; P = 0.019). CONCLUSION: Defective expression of RFT2 is associated with the development of GC and this may represent a mechanism underlying the decreased plasma riboflavin levels in GC. PMID:22791947

  19. Deep Defect Detection within Thick Multilayer Aircraft Structures Containing Steel Fasteners Using a Giant-Magneto Resistive (GMR) Sensor (Preprint)

    National Research Council Canada - National Science Library

    Ko, Ray T; Steffes, Gary J

    2007-01-01

    Defect detection within thick multilayer structures containing steel fasteners is a challenging task in eddy current testing due to the magnetic permeability of the fasteners and overall thickness of the structure...

  20. Damage coefficient and defect level of copper-contaminated silicon N+P diode

    International Nuclear Information System (INIS)

    Usami, A.; Kato, Y.

    1975-01-01

    The damage coefficient at 298 0 K of copper-contaminated N + P diodes is smaller than that of non-contaminated ones. In these copper-contaminated samples, the higher the bulk resistivity is, the smaller is the damage coefficient. For non-contaminated diodes, the damage coefficient of samples of pulled bulk crystals is smaller than that of floating zone crystals, and the higher bulk resistivity diodes have smaller damage coefficient. At 217 0 K measurement, the effect of copper-contamination on the damage coefficient could not be observed. The energy levels of defects introduced by gamma ray irradiation are approximately0.30 eV, and approximately0.28 eV with non-contaminated FZ 135 ohm-cm and CZ 10 ohm-cm bulk samples, respectively. In copper-contaminated samples, approximately0.60 eV and approximately0.45 eV are obtained as the defect energy levels for FZ 135 ohm-cm and CZ 10 ohm-cm bulk samples. (U.S.)

  1. Deep geologic repository for low and intermediate radioactive level waste in Canada

    International Nuclear Information System (INIS)

    Liu Jianqin; Li Honghui; Sun Qinghong; Yang Zhongtian

    2012-01-01

    Ontario Power Generation (OPG) is undergoing a project for the long-term management of low and intermediate level waste (LILW)-a deep geologic repository (DGR) project for low and intermediate level waste. The waste source term disposed, geologic setting, repository layout and operation, and safety assessment are discussed. It is expected to provide reference for disposal of low and intermediate level waste that contain the higher concentration of long-lived radionuclides in China. (authors)

  2. Correlation of a generation-recombination center with a deep level trap in GaN

    International Nuclear Information System (INIS)

    Nguyen, X. S.; Lin, K.; Zhang, Z.; Arehart, A. R.; Ringel, S. A.; McSkimming, B.; Speck, J. S.; Fitzgerald, E. A.; Chua, S. J.

    2015-01-01

    We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E c  − 0.26 eV, E c  − 0.59 eV, and E c  − 0.71 eV. The noise spectroscopy identified a generation recombination centre at E c  − 0.65 ± 0.1 eV with a recombination lifetime of 65 μs at 300 K. This level is considered to be the same as the one at E c  − 0.59 eV measured from DLTS, as they have similar trap densities and capture cross section. This result shows that some deep levels contribute to noise generation in GaN materials

  3. [Prevalence of birth defects according to the level of care in two hospitals, Cali, Colombia, 2012-2013].

    Science.gov (United States)

    Pachajoa, Harry; Villota, Vania A; Cruz, Luz Marina; Ariza, Yoseth

    2015-01-01

    Birth defects are morphologic alterations diagnosed prenatal or postnatally. Surveillance systems have been used to estimate the prevalence in high complexity care centers; however, the variation of the prevalence among different complexity care centers remains unknown. To compare the prevalence of birth defects among two different complexity care centers in Cali, Colombia. A descriptive hospital-based study following the methodology of the Latin American Collaborative Study of Congenital Malformations was conducted during 20 months in a medium complexity hospital and a high complexity hospital. During the study period, 7,140 births were attended of which 225 had at least one birth defect. The prevalence of these was of 1.7% (IC95% 1.3-2.0) and 7.4% (IC95% 6.2-8.7) for the medium complexity hospital and the high complexity hospital, respectively. The highest frequencies for the high complexity care center were: ventricular septal defect, 10%; congenital hydronephrosis, 7%; abdominal wall defects, 6%, and hydrocephalus, 5%, while for the medium complexity were: polydactyly, 15%; preauricular skin tags, 8%; congenital talipes equino varus, 7%, and hemangioma, 6%. The prevalence of birth defects among different complexity care centers varies in quantity, type and severity of the anomaly diagnosed. The surveillance of birth defects is a useful tool for any level of care. It allows estimating more accurately the prevalence of the city, as well being a base for the planning and targeting of resources according to the prevalence of different congenital defects.

  4. A study of ion implanted gallium arsenide using deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Emerson, N.G.

    1981-03-01

    This thesis is concerned with the study of deep energy levels in ion implanted gallium arsenide (GaAs) using deep level transient spectroscopy (D.L.T.S.). The D.L.T.S. technique is used to characterise deep levels in terms of their activation energies and capture cross-sections and to determine their concentration profiles. The main objective is to characterise the effects on deep levels, of ion implantation and the related annealing processes. In the majority of cases assessment is carried out using Schottky barrier diodes. Low doses of selenium ions 1 to 3 x 10 12 cm -2 are implanted into vapour phase epitaxial (V.P.E.) GaAs and the effects of post-implantation thermal and pulsed laser annealing are compared. The process of oxygen implantation with doses in the range 1 x 10 12 to 5 x 10 13 cm -2 followed by thermal annealing at about 750 deg C, introduces a deep level at 0.79 eV from the conduction band. Oxygen implantation, at doses of 5 x 10 13 cm -2 , into V.P.E. GaAs produces a significant increase in the concentration of the A-centre (0.83 eV). High doses of zinc (10 15 cm -2 ) are implanted into n-type V.P.E. GaAs to form shallow p-type layers. The D.L.T.S. system described in the text is used to measure levels in the range 0.16 to 1.1 eV (for GaAs) with a sensitivity of the order 1:10 3 . (U.K.)

  5. Deep geologic storage of high level radioactive wastes: conceptual generic designs

    International Nuclear Information System (INIS)

    1995-01-01

    This report summarizes the studies on deep geologic storage of radioactive wastes and specially for the high-level radioactive wastes. The study is focussed to the geotechnical assessment and generic-conceptual designs. Methodology analysis, geotechnical feasibility, costs and operation are studied

  6. A Closer Look at Deep Learning Neural Networks with Low-level Spectral Periodicity Features

    DEFF Research Database (Denmark)

    Sturm, Bob L.; Kereliuk, Corey; Pikrakis, Aggelos

    2014-01-01

    Systems built using deep learning neural networks trained on low-level spectral periodicity features (DeSPerF) reproduced the most “ground truth” of the systems submitted to the MIREX 2013 task, “Audio Latin Genre Classification.” To answer why this was the case, we take a closer look...

  7. Numerical investigation of high level nuclear waste disposal in deep anisotropic geologic repositories

    KAUST Repository

    Salama, Amgad; El Amin, Mohamed F.; Sun, Shuyu

    2015-01-01

    One of the techniques that have been proposed to dispose high level nuclear waste (HLW) has been to bury them in deep geologic formations, which offer relatively enough space to accommodate the large volume of HLW accumulated over the years since

  8. Plan of deep underground construction for investigations on high-level radioactive waste storage

    International Nuclear Information System (INIS)

    Mayanovskij, M.S.

    1996-01-01

    The program of studies of the Japanese PNC corporation on construction of deep underground storage for high-level radioactive wastes is presented. The program is intended for 20 years. The total construction costs equal about 20 billion yen. The total cost of the project is equal to 60 billion yen. The underground part is planned to reach 1000 m depth

  9. Study on electrical defects level in single layer two-dimensional Ta2O5

    Science.gov (United States)

    Dahai, Li; Xiongfei, Song; Linfeng, Hu; Ziyi, Wang; Rongjun, Zhang; Liangyao, Chen; David, Wei Zhang; Peng, Zhou

    2016-04-01

    Two-dimensional atomic-layered material is a recent research focus, and single layer Ta2O5 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta2O5 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta2O5. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta2O5, exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta2O5. Project supported by the National Natural Science Foundation of China (Grant Nos. 11174058 and 61376093), the Fund from Shanghai Municipal Science and Technology Commission (Grant No. 13QA1400400), the National Science and Technology Major Project, China (Grant No. 2011ZX02707), and the Innovation Program of Shanghai Municipal Education Commission (Grant No. 12ZZ010).

  10. Luminescence and deep-level transient spectroscopy of grown dislocation-rich Si layers

    Directory of Open Access Journals (Sweden)

    I. I. Kurkina

    2012-09-01

    Full Text Available The charge deep-level transient spectroscopy (Q-DLTS is applied to the study of the dislocation-rich Si layers grown on a surface composed of dense arrays of Ge islands prepared on the oxidized Si surface. This provides revealing three deep-level bands located at EV + 0.31 eV, EC – 0.35 eV and EC – 0.43 eV using the stripe-shaped p-i-n diodes fabricated on the basis of these layers. The most interesting observation is the local state recharging process which proceeds with low activation energy (∼50 meV or without activation. The recharging may occur by carrier tunneling within deep-level bands owing to the high dislocation density ∼ 1011 - 1012 cm-2. This result is in favor of the suggestion on the presence of carrier transport between the deep states, which was previously derived from the excitation dependence of photoluminescence (PL intensity. Electroluminescence (EL spectra measured from the stripe edge of the same diodes contain two peaks centered near 1.32 and 1.55 μm. Comparison with PL spectra indicates that the EL peaks are generated from arsenic-contaminated and pure areas of the layers, respectively.

  11. High levels of natural radionuclides in a deep-sea infaunal xenophyophore

    Energy Technology Data Exchange (ETDEWEB)

    Swinbanks, D D; Shirayama, Y

    1986-03-27

    The paper concerns the high levels of natural radionuclides in a deep-sea infaunal xenophyophore from the Izu-Ogasawara Trench. Measured /sup 210/Po activities and barium contents of various parts of Occultammina profunda and the surrounding sediment are given, together with their estimated /sup 210/Pb and /sup 226/Ra activities. The data suggest that xenophyphores are probably subject to unusually high levels of natural radiation.

  12. Interacting two-level defects as sources of fluctuating high-frequency noise in superconducting circuits

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, Clemens [ARC Centre of Excellence for Engineered Quantum Systems, The University of Queensland, Brisbane (Australia); Lisenfeld, Juergen [Physikalisches Institut, Karlsruhe Institute of Technology, Karlsruhe (Germany); Shnirman, Alexander [Institut fuer Theory der Kondensierten Materie, Karlsruhe Institute of Technology, Karlsruhe (Germany); LD Landau Institute for Theoretical Physics, Moscow (Russian Federation); Poletto, Stefano [IBM TJ Watson Research Centre, Yorktown Heights (United States)

    2016-07-01

    Since the very first experiments, superconducting circuits have suffered from strong coupling to environmental noise, destroying quantum coherence and degrading performance. In state-of-the-art experiments, it is found that the relaxation time of superconducting qubits fluctuates as a function of time. We present measurements of such fluctuations in a 3D-transmon circuit and develop a qualitative model based on interactions within a bath of background two-level systems (TLS) which emerge from defects in the device material. In our model, the time-dependent noise density acting on the qubit emerges from its near-resonant coupling to high-frequency TLS which experience energy fluctuations due to their interaction with thermally fluctuating TLS at low frequencies. We support the model by providing experimental evidence of such energy fluctuations observed in a single TLS in a phase qubit circuit.

  13. A null mutation of Hhex results in abnormal cardiac development, defective vasculogenesis and elevated Vegfa levels.

    Science.gov (United States)

    Hallaq, Haifa; Pinter, Emese; Enciso, Josephine; McGrath, James; Zeiss, Caroline; Brueckner, Martina; Madri, Joseph; Jacobs, Harris C; Wilson, Christine M; Vasavada, Hemaxi; Jiang, Xiaobing; Bogue, Clifford W

    2004-10-01

    The homeobox gene Hhex has recently been shown to be essential for normal liver, thyroid and forebrain development. Hhex(-/-) mice die by mid-gestation (E14.5) and the cause of their early demise remains unclear. Because Hhex is expressed in the developing blood islands at E7.0 in the endothelium of the developing vasculature and heart at E9.0-9.5, and in the ventral foregut endoderm at E8.5-9.0, it has been postulated to play a critical role in heart and vascular development. We show here, for the first time, that a null mutation of Hhex results in striking abnormalities of cardiac and vascular development which include: (1) defective vasculogenesis, (2) hypoplasia of the right ventricle, (3) overabundant endocardial cushions accompanied by ventricular septal defects, outflow tract abnormalities and atrio-ventricular (AV) valve dysplasia and (4) aberrant development of the compact myocardium. The dramatic enlargement of the endocardial cushions in the absence of Hhex is due to decreased apoptosis and dysregulated epithelial-mesenchymal transformation (EMT). Interestingly, vascular endothelial growth factor A (Vegfa) levels in the hearts of Hhex(-/-) mice were elevated as much as three-fold between E9.5 and E11.5, and treatment of cultured Hhex(-/-) AV explants with truncated soluble Vegfa receptor 1, sFlt-1, an inhibitor of Vegf signaling, completely abolished the excessive epithelial-mesenchymal transformation seen in the absence of Hhex. Therefore, Hhex expression in the ventral foregut endoderm and/or the endothelium is necessary for normal cardiovascular development in vivo, and one function of Hhex is to repress Vegfa levels during development.

  14. Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Gür, Emre; Tabares, G.; Hierro, A.; Arehart, A.; Ringel, S. A.; Chauveau, J. M.

    2012-01-01

    Deep level defects in n-type unintentionally doped a-plane Mg x Zn 1−x O, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of Mg x Zn 1−x O were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of E c − 1.4 eV, 2.1 eV, 2.6 V, and E v + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at E c − 2.1 eV, E v + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at E v + 0.3 eV and E c − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the E v + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the E c − 1.4 eV and E c − 2.6 eV levels in Mg alloyed samples.

  15. Deep-level optical spectroscopy investigation of N-doped TiO2 films

    International Nuclear Information System (INIS)

    Nakano, Yoshitaka; Morikawa, Takeshi; Ohwaki, Takeshi; Taga, Yasunori

    2005-01-01

    N-doped TiO 2 films were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 deg. C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined from x-ray photoelectron spectroscopy measurements. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at ∼1.18 and ∼2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. Additionally, the 2.48 eV band is newly introduced by the N doping and contributes to band-gap narrowing by mixing with the O 2p valence band

  16. Lack of mutagens in deep-fat-fried foods obtained at the retail level.

    Science.gov (United States)

    Taylor, S L; Berg, C M; Shoptaugh, N H; Scott, V N

    1982-04-01

    The basic methylene chloride extract from 20 of 30 samples of foods fried in deep fat failed to elicit any mutagenic response that could be detected in the Salmonella typhimurium/mammalian microsome assay. The basic extracts of the remaining ten samples (all three chicken samples studied, two of the four potato-chip samples, one of four corn-chip samples, the sample of onion rings, two of six doughnuts, and one of three samples of french-fried potato) showed evidence of weak mutagenic activity. In these samples, amounts of the basic extract equivalent to 28.5-57 g of the original food sample were required to produce revertants at levels of 2.6-4.8 times the background level. Only two of the acidic methylene chloride extracts from the 30 samples exhibited mutagenic activity greater than 2.5 times the background reversion level, and in both cases (one corn-chip and one shrimp sample) the mutagenic response was quite weak. The basic extract of hamburgers fried in deep fat in a home-style fryer possessed higher levels of mutagenic activity (13 times the background reversion level). However, the mutagenic activity of deep-fried hamburgers is some four times lower than that of pan-fried hamburgers.

  17. Reference design and operations for deep borehole disposal of high-level radioactive waste

    International Nuclear Information System (INIS)

    Herrick, Courtney Grant; Brady, Patrick Vane; Pye, Steven; Arnold, Bill Walter; Finger, John Travis; Bauer, Stephen J.

    2011-01-01

    A reference design and operational procedures for the disposal of high-level radioactive waste in deep boreholes have been developed and documented. The design and operations are feasible with currently available technology and meet existing safety and anticipated regulatory requirements. Objectives of the reference design include providing a baseline for more detailed technical analyses of system performance and serving as a basis for comparing design alternatives. Numerous factors suggest that deep borehole disposal of high-level radioactive waste is inherently safe. Several lines of evidence indicate that groundwater at depths of several kilometers in continental crystalline basement rocks has long residence times and low velocity. High salinity fluids have limited potential for vertical flow because of density stratification and prevent colloidal transport of radionuclides. Geochemically reducing conditions in the deep subsurface limit the solubility and enhance the retardation of key radionuclides. A non-technical advantage that the deep borehole concept may offer over a repository concept is that of facilitating incremental construction and loading at multiple perhaps regional locations. The disposal borehole would be drilled to a depth of 5,000 m using a telescoping design and would be logged and tested prior to waste emplacement. Waste canisters would be constructed of carbon steel, sealed by welds, and connected into canister strings with high-strength connections. Waste canister strings of about 200 m length would be emplaced in the lower 2,000 m of the fully cased borehole and be separated by bridge and cement plugs. Sealing of the upper part of the borehole would be done with a series of compacted bentonite seals, cement plugs, cement seals, cement plus crushed rock backfill, and bridge plugs. Elements of the reference design meet technical requirements defined in the study. Testing and operational safety assurance requirements are also defined. Overall

  18. Reference design and operations for deep borehole disposal of high-level radioactive waste.

    Energy Technology Data Exchange (ETDEWEB)

    Herrick, Courtney Grant; Brady, Patrick Vane; Pye, Steven; Arnold, Bill Walter; Finger, John Travis; Bauer, Stephen J.

    2011-10-01

    A reference design and operational procedures for the disposal of high-level radioactive waste in deep boreholes have been developed and documented. The design and operations are feasible with currently available technology and meet existing safety and anticipated regulatory requirements. Objectives of the reference design include providing a baseline for more detailed technical analyses of system performance and serving as a basis for comparing design alternatives. Numerous factors suggest that deep borehole disposal of high-level radioactive waste is inherently safe. Several lines of evidence indicate that groundwater at depths of several kilometers in continental crystalline basement rocks has long residence times and low velocity. High salinity fluids have limited potential for vertical flow because of density stratification and prevent colloidal transport of radionuclides. Geochemically reducing conditions in the deep subsurface limit the solubility and enhance the retardation of key radionuclides. A non-technical advantage that the deep borehole concept may offer over a repository concept is that of facilitating incremental construction and loading at multiple perhaps regional locations. The disposal borehole would be drilled to a depth of 5,000 m using a telescoping design and would be logged and tested prior to waste emplacement. Waste canisters would be constructed of carbon steel, sealed by welds, and connected into canister strings with high-strength connections. Waste canister strings of about 200 m length would be emplaced in the lower 2,000 m of the fully cased borehole and be separated by bridge and cement plugs. Sealing of the upper part of the borehole would be done with a series of compacted bentonite seals, cement plugs, cement seals, cement plus crushed rock backfill, and bridge plugs. Elements of the reference design meet technical requirements defined in the study. Testing and operational safety assurance requirements are also defined. Overall

  19. An improved AE detection method of rail defect based on multi-level ANC with VSS-LMS

    Science.gov (United States)

    Zhang, Xin; Cui, Yiming; Wang, Yan; Sun, Mingjian; Hu, Hengshan

    2018-01-01

    In order to ensure the safety and reliability of railway system, Acoustic Emission (AE) method is employed to investigate rail defect detection. However, little attention has been paid to the defect detection at high speed, especially for noise interference suppression. Based on AE technology, this paper presents an improved rail defect detection method by multi-level ANC with VSS-LMS. Multi-level noise cancellation based on SANC and ANC is utilized to eliminate complex noises at high speed, and tongue-shaped curve with index adjustment factor is proposed to enhance the performance of variable step-size algorithm. Defect signals and reference signals are acquired by the rail-wheel test rig. The features of noise signals and defect signals are analyzed for effective detection. The effectiveness of the proposed method is demonstrated by comparing with the previous study, and different filter lengths are investigated to obtain a better noise suppression performance. Meanwhile, the detection ability of the proposed method is verified at the top speed of the test rig. The results clearly illustrate that the proposed method is effective in detecting rail defects at high speed, especially for noise interference suppression.

  20. Effect of deep dislocation levels in silicon on the properties of p-n junctions

    Energy Technology Data Exchange (ETDEWEB)

    Zakharov, A.G.; Dudko, V.G.; Nabokov, G.M.; Sechenov, D.A.

    1988-07-01

    We present the results of studies on the influence of deep levels, due to dislocations in electronic-grade silicon, on the lifetime of minority carriers and on the current-voltage and capacitance-voltage characteristics of p-n junctions. The parameters of the deep levels were determined by means of dynamic spectroscopy. The carrier lifetime in the high-resistance region of the p-n junction correlates well with the dislocation density and varies from 10/sup /minus/7/ sec to 3 /centered dot/10/sup /minus/6/ sec when the dislocation density N/sub d/ varies from 10/sup 7/ cm/sup /minus/2/ to 5 /centered dot/10/sup 3/ cm/sup /minus/2/. The voltage across the p-n junction at a high level of injection varies 1.6 to 6.2 v as a function of N/sub d/. The ionization energy of deep levels associated with dislocation in silicon is 0.44 and 0.57 eV, measured from the bottom of the conduction band.

  1. Deep level transient spectroscopy studies of charge traps introduced into silicon by channeling ion implantation of phosphorus

    International Nuclear Information System (INIS)

    McCallum, J.C.; Lay, M.; Deenapanray, P.N.K.; Jagadish, C.

    2002-01-01

    Full text: The operating conditions of a silicon-based quantum computer are expected to place stringent requirements on the quality of the material and the processes used to make it. In the Special Research Centre for Quantum Computer Technology, ion implantation is one of the principle processing techniques under investigation for forming an ordered array of phosphorus atoms. This technique introduces defect centres in silicon which act as charge traps. Charge traps are expected to be detrimental to operation of the device. These defect centres, their dependence on ion implantation and thermal annealing conditions are being quantified using Deep Level Transient Spectroscopy (DLTS). Since the aspect ratio of the masks required for the top-down fabrication process restrict the incident ions to a range of angles in which they may undergo channeling implantation in the silicon substrate, we have examined the effect of channeling implantation on the nature and quantity of the charge traps produced. This is the first time that DLTS studies have been performed for channeling implantation of a dopant species in silicon. DLTS is well-suited to the dose regime of ∼10 11 P/cm 3 required for the quantum computer, however, a standard DLTS measurement is unable to probe the shallow depth range of ∼ 20 nm required for the P atoms (∼ 10-15 keV implantation energy). Our aim has therefore been to perform P implants in the appropriate dose regime but using higher implantation energies, ∼ 75-450 keV, where DLTS can directly identify and profile the charge traps induced by the implantation step and monitor their annealing characteristics during subsequent processing. To map the behaviour observed in this energy regime onto the low energy range required for the quantum computer we are comparing the DLTS results to damage profiles predicted by the Monte Carlo code Crystal Trim which is used in the semiconductor industry to simulate ion implantation processes in crystalline

  2. Albedo Neutron Dosimetry in a Deep Geological Disposal Repository for High-Level Nuclear Waste.

    Science.gov (United States)

    Pang, Bo; Becker, Frank

    2017-04-28

    Albedo neutron dosemeter is the German official personal neutron dosemeter in mixed radiation fields where neutrons contribute to personal dose. In deep geological repositories for high-level nuclear waste, where neutrons can dominate the radiation field, it is of interest to investigate the performance of albedo neutron dosemeter in such facilities. In this study, the deep geological repository is represented by a shielding cask loaded with spent nuclear fuel placed inside a rock salt emplacement drift. Due to the backscattering of neutrons in the drift, issues concerning calibration of the dosemeter arise. Field-specific calibration of the albedo neutron dosemeter was hence performed with Monte Carlo simulations. In order to assess the applicability of the albedo neutron dosemeter in a deep geological repository over a long time scale, spent nuclear fuel with different ages of 50, 100 and 500 years were investigated. It was found out, that the neutron radiation field in a deep geological repository can be assigned to the application area 'N1' of the albedo neutron dosemeter, which is typical in reactors and accelerators with heavy shielding. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  3. Effects of heat from high-level waste on performance of deep geological repository components

    International Nuclear Information System (INIS)

    1984-11-01

    This report discusses the effects of heat on the deep geological repository systems and its different components. The report is focussed specifically on effects due to thermal energy release solely from high-level waste or spent fuel. It reviews the experimental data and theoretical models of the effects of heat both on the behaviour of engineered and natural barriers. A summary of the current status of research and repository development including underground test facilities is presented

  4. Identification of deep levels in GaN associated with dislocations

    International Nuclear Information System (INIS)

    Soh, C B; Chua, S J; Lim, H F; Chi, D Z; Liu, W; Tripathy, S

    2004-01-01

    To establish a correlation between dislocations and deep levels in GaN, a deep-level transient spectroscopy study has been carried out on GaN samples grown by metalorganic chemical vapour deposition. In addition to typical undoped and Si-doped GaN samples, high-quality crack-free undoped GaN film grown intentionally on heavily doped cracked Si-doped GaN and cracked AlGaN templates are also chosen for this study. The purpose of growth of such continuous GaN layers on top of the cracked templates is to reduce the screw dislocation density by an order of magnitude. Deep levels in these layers have been characterized and compared with emphasis on their thermal stabilities and capture kinetics. Three electron traps at E c -E T ∼0.10-0.11, 0.24-0.27 and 0.59-0.63 eV are detected common to all the samples while additional levels at E c -E T ∼0.18 and 0.37-0.40 eV are also observed in the Si-doped GaN. The trap levels exhibit considerably different stabilities under rapid thermal annealing. Based on the observations, the trap levels at E c -E T ∼0.18 and 0.24-0.27 eV can be associated with screw dislocations, whereas the level at E c -E T ∼0.59-0.63 eV can be associated with edge dislocations. This is also in agreement with the transmission electron microscopy measurements conducted on the GaN samples

  5. Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiC

    International Nuclear Information System (INIS)

    Carlos, W.E.; Glaser, E.R.; Shanabrook, B.V.

    2003-01-01

    We have studied semi-insulating (SI) 4H SiC grown by physical vapor transport (PVT) and by high-temperature chemical vapor deposition (HTCVD) using electron paramagnetic resonance (EPR) and infrared photoluminescence (IR-PL) to better understand the defect(s) responsible for the SI behavior. Although intrinsic defects such as the isolated carbon vacancy and in some cases the isolated Si vacancies have previously been observed by EPR in undoped SI SiC, their concentrations are an order of magnitude too low to be responsible for the SI behavior. We are able to observe the EPR signature of the carbon vacancy-carbon antisite pair (V C -C Si ) pair defect in an excited state of its 2+ charge state in all PVT samples and some HTCVD samples. We also establish the IR-PL signature of this EPR center as the UD2 spectrum - a set of four sharp lines between 1.1 and 1.15 eV previously observed by Magnusson et al. in neutron-irradiated 4H-SiC. We also observe the UD1 line, a pair of sharp IR-PL lines at ∼1.06 eV and UD3, a single sharp line at ∼1.36 eV. We propose a simple model for the SI behavior in material in which the (V C -C Si ) pair defect is the dominant deep defect

  6. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Z.; Cardwell, D.; Sasikumar, A.; Arehart, A. R.; Ringel, S. A., E-mail: ringel.5@osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Kyle, E. C. H.; Speck, J. S. [Department of Materials, University of California, Santa Barbara, California 93106-5050 (United States); Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D. [Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235 (United States)

    2016-04-28

    The impact of proton irradiation on the threshold voltage (V{sub T}) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V{sub T} was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 10{sup 14} cm{sup −2}. Silvaco Atlas simulations of V{sub T} shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V{sub T} dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed V{sub T} shifts. The proton irradiation induced V{sub T} shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

  7. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

    Science.gov (United States)

    Zhang, Z.; Cardwell, D.; Sasikumar, A.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Arehart, A. R.; Ringel, S. A.

    2016-04-01

    The impact of proton irradiation on the threshold voltage (VT) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of VT was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 1014 cm-2. Silvaco Atlas simulations of VT shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different VT dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed VT shifts. The proton irradiation induced VT shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

  8. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

    International Nuclear Information System (INIS)

    Zhang, Z.; Cardwell, D.; Sasikumar, A.; Arehart, A. R.; Ringel, S. A.; Kyle, E. C. H.; Speck, J. S.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.

    2016-01-01

    The impact of proton irradiation on the threshold voltage (V T ) of AlGaN/GaN heterostructures is systematically investigated to enhance the understanding of a primary component of the degradation of irradiated high electron mobility transistors. The value of V T was found to increase monotonically as a function of 1.8 MeV proton fluence in a sub-linear manner reaching 0.63 V at a fluence of 1 × 10 14  cm −2 . Silvaco Atlas simulations of V T shifts caused by GaN buffer traps using experimentally measured introduction rates, and energy levels closely match the experimental results. Different buffer designs lead to different V T dependences on proton irradiation, confirming that deep, acceptor-like defects in the GaN buffer are primarily responsible for the observed V T shifts. The proton irradiation induced V T shifts are found to depend on the barrier thickness in a linear fashion; thus, scaling the barrier thickness could be an effective way to reduce such degradation.

  9. Quantum computing with defects

    Science.gov (United States)

    Varley, Joel

    2011-03-01

    The development of a quantum computer is contingent upon the identification and design of systems for use as qubits, the basic units of quantum information. One of the most promising candidates consists of a defect in diamond known as the nitrogen-vacancy (NV-1) center, since it is an individually-addressable quantum system that can be initialized, manipulated, and measured with high fidelity at room temperature. While the success of the NV-1 stems from its nature as a localized ``deep-center'' point defect, no systematic effort has been made to identify other defects that might behave in a similar way. We provide guidelines for identifying other defect centers with similar properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate systems. To elucidate these points, we compare electronic structure calculations of the NV-1 center in diamond with those of several deep centers in 4H silicon carbide (SiC). Using hybrid functionals, we report formation energies, configuration-coordinate diagrams, and defect-level diagrams to compare and contrast the properties of these defects. We find that the NC VSi - 1 center in SiC, a structural analog of the NV-1 center in diamond, may be a suitable center with very different optical transition energies. We also discuss how the proposed criteria can be translated into guidelines to discover NV analogs in other tetrahedrally coordinated materials. This work was performed in collaboration with J. R. Weber, W. F. Koehl, B. B. Buckley, A. Janotti, C. G. Van de Walle, and D. D. Awschalom. This work was supported by ARO, AFOSR, and NSF.

  10. Electrically active sodium-related defect centres in silicon

    DEFF Research Database (Denmark)

    Dahl, Espen; Madsbøll, J.; Søiland, A.-K.

    2013-01-01

    Electrically active defect centres related to sodium in silicon have been examined with deep level transient spectroscopy, and their recombination potential analysed with the microwave photoconductive decay technique. In order to investigate the entire silicon band gap for defect centres, both p-...

  11. Multi-level gene/MiRNA feature selection using deep belief nets and active learning.

    Science.gov (United States)

    Ibrahim, Rania; Yousri, Noha A; Ismail, Mohamed A; El-Makky, Nagwa M

    2014-01-01

    Selecting the most discriminative genes/miRNAs has been raised as an important task in bioinformatics to enhance disease classifiers and to mitigate the dimensionality curse problem. Original feature selection methods choose genes/miRNAs based on their individual features regardless of how they perform together. Considering group features instead of individual ones provides a better view for selecting the most informative genes/miRNAs. Recently, deep learning has proven its ability in representing the data in multiple levels of abstraction, allowing for better discrimination between different classes. However, the idea of using deep learning for feature selection is not widely used in the bioinformatics field yet. In this paper, a novel multi-level feature selection approach named MLFS is proposed for selecting genes/miRNAs based on expression profiles. The approach is based on both deep and active learning. Moreover, an extension to use the technique for miRNAs is presented by considering the biological relation between miRNAs and genes. Experimental results show that the approach was able to outperform classical feature selection methods in hepatocellular carcinoma (HCC) by 9%, lung cancer by 6% and breast cancer by around 10% in F1-measure. Results also show the enhancement in F1-measure of our approach over recently related work in [1] and [2].

  12. Probability of burn-through of defective 13 kA splices at increased energy levels

    CERN Document Server

    Verweij, A

    2011-01-01

    In many 13 kA splices in the machine there is a lack of bonding between the superconducting cable and the stabilising copper along with a bad contact between the bus stabiliser and the splice stabiliser. In case of a quench of such a defective splice, the current cannot bypass the cable through the copper, hence leading to excessive local heating of the cable. This may result in a thermal runaway and burn-through of the cable in a time smaller than the time constant of the circuit. Since it is not possible to protect against this fast thermal run-away, one has to limit the current to a level that is small enough so that a burn-through cannot occur. Prompt quenching of the joint, and quenching due to heat propagation through the bus and through the helium are considered. Probabilities for joint burn-through are given for the RB circuit for beam energies of 3.5, 4 and 4.5 TeV, and a decay time constant of the RB circuit of 50 and 68 s.

  13. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

    Science.gov (United States)

    Zhang, Z.; Arehart, A. R.; Kyle, E. C. H.; Chen, J.; Zhang, E. X.; Fleetwood, D. M.; Schrimpf, R. D.; Speck, J. S.; Ringel, S. A.

    2015-01-01

    The impact of proton irradiation on the deep level states throughout the Mg-doped p-type GaN bandgap is investigated using deep level transient and optical spectroscopies. Exposure to 1.8 MeV protons of 1 × 1013 cm-2 and 3 × 1013 cm-2 fluences not only introduces a trap with an EV + 1.02 eV activation energy but also brings monotonic increases in concentration for as-grown deep states at EV + 0.48 eV, EV + 2.42 eV, EV + 3.00 eV, and EV + 3.28 eV. The non-uniform sensitivities for individual states suggest different physical sources and/or defect generation mechanisms. Comparing with prior theoretical calculations reveals that several traps are consistent with associations to nitrogen vacancy, nitrogen interstitial, and gallium vacancy origins, and thus are likely generated through displacing nitrogen and gallium atoms from the crystal lattice in proton irradiation environment.

  14. Imaging atomic-level random walk of a point defect in graphene

    Science.gov (United States)

    Kotakoski, Jani; Mangler, Clemens; Meyer, Jannik C.

    2014-05-01

    Deviations from the perfect atomic arrangements in crystals play an important role in affecting their properties. Similarly, diffusion of such deviations is behind many microstructural changes in solids. However, observation of point defect diffusion is hindered both by the difficulties related to direct imaging of non-periodic structures and by the timescales involved in the diffusion process. Here, instead of imaging thermal diffusion, we stimulate and follow the migration of a divacancy through graphene lattice using a scanning transmission electron microscope operated at 60 kV. The beam-activated process happens on a timescale that allows us to capture a significant part of the structural transformations and trajectory of the defect. The low voltage combined with ultra-high vacuum conditions ensure that the defect remains stable over long image sequences, which allows us for the first time to directly follow the diffusion of a point defect in a crystalline material.

  15. Theory of deep level trap effects on generation-recombination noise in HgCdTe photoconductors

    International Nuclear Information System (INIS)

    Iverson, A.E.; Smith, D.L.

    1985-01-01

    We present a theory of the effect of deep level centers on the generation-recombination (g-r) noise and responsivity of an intrinsic photoconductor. The deep level centers can influence the g-r noise and responsivity in three main ways: (i) they can shorten the bulk carrier lifetime by Shockley--Read--Hall recombination; (ii) for some values of the capture cross sections, deep level densities, and temperature, the deep levels can trap a significant fraction of the photogenerated minority carriers. This trapping reduces the effective minority carrier mobility and diffusivity and thus reduces the effect of carrier sweep out on both g-r noise and responsivity; (iii) the deep level centers add a new thermal noise source, which results from fluctuations between bound and free carriers. The strength of this new noise source decreases with decreasing temperature at a slower rate than band-to-band thermal g-r noise. Calculations have been performed for a X = 0.21, n-type Hg/sub 1-x/Cd/sub x/Te photoconductor using the parameters of a commonly occurring deep level center in this material. We find that for typical operating conditions photoconductive detector performance begins to degrade as the deep level density begins to exceed 10 16 cm -3

  16. Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Haochun; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hiramatsu, Hidenori [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Ueda, Shigenori [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Ohashi, Naoki [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hosono, Hideo [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Kamiya, Toshio, E-mail: tkamiya@msl.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

    2016-09-01

    We investigated the effects of thermal annealing for high-density subgap states in amorphous In–Ga–Zn–O (a-IGZO) films by focusing on low-quality defective films deposited without O{sub 2} supply (LQ films). It was found that most of the subgap states were thermally unstable and decreased dramatically by annealing at ≤ 400 °C in O{sub 2}. These defects (but with different shapes) were further reduced by 600 °C annealing, whose subgap states appeared similar to that of a-IGZO films deposited at an optimum condition (high quality, HQ films) and annealed at 300 °C. However, electron Hall mobilities and field-effect mobilities of their thin-film transistors (TFTs) were low for the LQ films/TFTs even annealed at 600 °C compared to those for the HQ films/TFTs. It implies that not only the subgap states but also heavier structural disorder deteriorated the electron transport in the LQ films. The present results also suggest that although a-IGZO deposition without O{sub 2} supply is sometimes employed in particular for DC sputtering, supplying some O{sub 2} gas would be better to produce good TFTs at lower temperatures. - Highlights: • Effects of thermal annealing on subgap states in a-In–Ga–Zn–O films were studied. • Hard X-ray photoemission spectroscopy was employed. • Low-quality films require annealing at 600 °C to make an operating transistor. • This temperature is much higher than those for high-quality films (300–400 °C). • The high temperature is required because some subgap states are very stable.

  17. Spectroscopy of deep doping levels in Cd0.99Mn0.01Te:Ga

    International Nuclear Information System (INIS)

    Szatkowski, J.; Placzek-Popko, E.; Sieranski, K.; Bieg, B.

    1997-01-01

    The investigation results of deep energy levels in Cd 0.99 Mn 0.01 Te (n-type) doped with gallium have been presented. Deep level transient spectroscopy (DLTS) measurements have been carried out in temperature range 80-420 K. The results show five types of electron traps. The activation energy of trapping levels and electron trapping cross-sections have been determined for observed traps. 2 refs, 3 figs, 1 tab

  18. Causes of defects and accuracy of structure reproduction in deep-etch X-ray lithography using synchrotron radiation

    International Nuclear Information System (INIS)

    Mohr, J.; Ehrfeld, W.; Muenchmeyer, D.

    1988-07-01

    Under the LIGA process plastic microstructures with extraordinarily high aspect ratios are produced by means of deep-etch synchrotron radiation lithography. These microstructures are used as templates for the fabrication by electroforming of metallic microstructures. The several hundred micrometer thick resist layers required in the process are polymerized directly on a metal base plate using a methacrylate based resin. This provides sufficient stability during the production process and also a reliable plating base for the electrodeposition of the metal. Perfect adhesion of micron-sized microstructures on a smooth surface can be achieved if the polished metal surface is sputtered with titanium and chemically oxidized afterwards. Alternatively it is also possible to add an internal adhesion promoter like methacryl oxypropyl trimethoxy silane to the resin. By means of this adhesion promoter chemical bonding between the metal surface and the polymer is achieved. (orig.)

  19. Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Kada, W., E-mail: kada.wataru@gunma-u.ac.jp [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Kambayashi, Y.; Ando, Y. [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Onoda, S. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Umezawa, H.; Mokuno, Y. [National Institute of Advanced Industrial Science and Technology (AIST), 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577 (Japan); Shikata, S. [Kwansei Gakuin Univ., 2-1, Gakuen, Mita, Hyogo 669-1337 (Japan); Makino, T.; Koka, M. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan); Hanaizumi, O. [Faculty of Science and Technology, Gunma University, Kiryu, Gunma 376-8515 (Japan); Kamiya, T.; Ohshima, T. [Japan Atomic Energy Agency, Takasaki, Gunma 370-1292 (Japan)

    2016-04-01

    To investigate electrically-active deep levels in high-resistivity single-crystalline diamond, particle-induced charge transient spectroscopy (QTS) techniques were performed using 5.5 MeV alpha particles and 9 MeV carbon focused microprobes. For unintentionally-doped (UID) chemical vapor deposition (CVD) diamond, deep levels with activation energies of 0.35 eV and 0.43 eV were detected which correspond to the activation energy of boron acceptors in diamond. The results suggested that alpha particle and heavy ion induced QTS techniques are the promising candidate for in-situ investigation of deep levels in high-resistivity semiconductors.

  20. Anti-resonance scattering at defect levels in the quantum conductance of a one-dimensional system

    Science.gov (United States)

    Sun, Z. Z.; Wang, Y. P.; Wang, X. R.

    2002-03-01

    For the ballistic quantum transport, the conductance of one channel is quantized to a value of 2e^2/h described by the Landauer formula. In the presence of defects, electrons will be scattered by these defects. Thus the conductance will deviate from the values of the quantized conductance. We show that an anti-resonance scattering can occur when an extra defect level is introduced into a conduction band. At the anti-resonance scattering, exact one quantum conductance is destroyed. The conductance takes a non-zero value when the Fermi energy is away from the anti-resonance scattering. The result is consistent with recent numerical calculations given by H. J. Choi et al. (Phys. Rev. Lett. 84, 2917(2000)) and P. L. McEuen et al. (Phys. Rev. Lett. 83, 5098(1999)).

  1. Phase time delay and Hartman effect in a one-dimensional photonic crystal with four-level atomic defect layer

    Science.gov (United States)

    Jamil, Rabia; Ali, Abu Bakar; Abbas, Muqaddar; Badshah, Fazal; Qamar, Sajid

    2017-08-01

    The Hartman effect is revisited using a Gaussian beam incident on a one-dimensional photonic crystal (1DPC) having a defect layer doped with four-level atoms. It is considered that each atom of the defect layer interacts with three driving fields, whereas a Gaussian beam of width w is used as a probe light to study Hartman effect. The atom-field interaction inside the defect layer exhibits electromagnetically induced transparency (EIT). The 1DPC acts as positive index material (PIM) and negative index material (NIM) corresponding to the normal and anomalous dispersion of the defect layer, respectively, via control of the phase associated with the driving fields and probe detuning. The positive and negative Hartman effects are noticed for PIM and NIM, respectively, via control of the relative phase corresponding to the driving fields and probe detuning. The advantage of using four-level EIT system is that a much smaller absorption of the transmitted beam occurs as compared to three-level EIT system corresponding to the anomalous dispersion, leading to negative Hartman effect.

  2. Biomechanical properties: effects of low-level laser therapy and Biosilicate® on tibial bone defects in osteopenic rats.

    Science.gov (United States)

    Fangel, Renan; Bossini, Paulo S; Renno, Ana Cláudia; Granito, Renata N; Wang, Charles C; Nonaka, Keico O; Driusso, Patricia; Parizotto, Nivaldo A; Oishi, Jorge

    2014-12-30

    The aim of this study was to investigate the effects of laser therapy and Biosilicate® on the biomechanical properties of bone callus in osteopenic rats. Fifty female Wistar rats were equally divided into 5 groups (n=10/group): osteopenic rats with intact tibiae (SC); osteopenic rats with unfilled and untreated tibial bone defects (OC); osteopenic rats whose bone defects were treated with Biosilicate® (B); osteopenic rats whose bone defects were treated with 830-nm laser, at 120 J/cm2 (L120) and osteopenic rats whose bone defects were treated with Biosilicate® and 830-nm laser, at 120 J/cm2 (BL120). Ovariectomy (OVX) was used to induce osteopenia. A non-critical bone defect was created on the tibia of the osteopenic animals 8 weeks after OVX. In Biosilicate® groups, bone defects were completely filled with the biomaterial. For the laser therapy, an 830-nm laser, 120 J/cm2 was used. On day 14 postsurgery, rats were euthanized, and tibiae were removed for biomechanical analysis. Maximal load and energy absorption were higher in groups B and BL120, according to the indentation test. Animals submitted to low-level laser therapy (LLLT) did not show any significant biomechanical improvement, but the association between Biosilicate® and LLLT was shown to be efficient to enhance callus biomechanical properties. Conversely, no differences were found between study groups in the bending test. Biosilicate® alone or in association with low level laser therapy improves biomechanical properties of tibial bone callus in osteopenic rats.

  3. Ionization-induced rearrangement of defects in silicon

    International Nuclear Information System (INIS)

    Vinetskij, V.L.; Manojlo, M.A.; Matvijchuk, A.S.; Strikha, V.I.; Kholodar', G.A.

    1988-01-01

    Ionizing factor effect on defect rearrangement in silicon including centers with deep local electron levels in the p-n-transition region is considered. Deep center parameters were determined using non-steady-state capacity spectroscopy of deep levels (NCDLS) method. NCDLS spectrum measurement was performed using source p + -n - diodes and after their irradiation with 15 keV energy electrons or laser pulses. It is ascertained that in silicon samples containing point defect clusters defect rearrangement under ionizing factor effect takes place, i.e. deep level spectra are changed. This mechanism is efficient in case of silicon irradiation with subthreshold energy photons and electrons and can cause degradation of silicon semiconducting structures

  4. Radon 222 levels in deep well waters of Toluca municipality (county)

    International Nuclear Information System (INIS)

    Olguin Gutierrez, Maria Teresa.

    1990-01-01

    The levels of Radon 222 were determined in 46 deep (50-180m) wells in the city and county of Toluca, as well as the annual radiation dose that the stomach admits when ingesting such water. The method used for the quantification of Radon 222 was liquid scintillation counting. The result revealed that levels of Radon 222 in the studied area in the range of 0 to 320 pCi l -1 . In the case of the equivalent annual dose that the stomach (empty) admits due to ingestion of water from the wells, values are in an interval between 0 to 95 mrem a -1 . This values are well below the level established by the International Commission of Radiological Protection (ICRP). The wells that had the higher concentration of Radon 222 were found in the regions of Lodo Prieto, Seminario; San Antonio Buenavista and La Trinidad Huichochitlan. (Author)

  5. Defects and impurities in silicon materials an introduction to atomic-level silicon engineering

    CERN Document Server

    Langouche, Guido

    2015-01-01

    This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

  6. On the position of local levels of defects in proton-irradiated Pb1-xSnxTe alloys

    International Nuclear Information System (INIS)

    Brandt, N.B.; Gas'kov, A.M.; Ladygin, E.A.; Skipetrov, E.P.; Khorosh, A.G.

    1989-01-01

    Effect of fast proton irradiation (T≅300 K, E=200 keV, F≤2x10 14 cm -2 ) on electrophysical properties of thin layers p-Pb 1-x Sn x Te (0.17 ≤x≤ 0.26) is investigated. Saturation of radiation flux dependences of hole density due to occurrence of a resonance level under irradiation, which is near the ceiling of the valence band of alloys, and due to stabilization of the Fermi level with the resonance level is detected. Possibility of coordination of novadays data on the position of the levels of radiation defects in alloys Pb 1-x Sn x Te is discussed

  7. Automatic recognition of severity level for diagnosis of diabetic retinopathy using deep visual features.

    Science.gov (United States)

    Abbas, Qaisar; Fondon, Irene; Sarmiento, Auxiliadora; Jiménez, Soledad; Alemany, Pedro

    2017-11-01

    Diabetic retinopathy (DR) is leading cause of blindness among diabetic patients. Recognition of severity level is required by ophthalmologists to early detect and diagnose the DR. However, it is a challenging task for both medical experts and computer-aided diagnosis systems due to requiring extensive domain expert knowledge. In this article, a novel automatic recognition system for the five severity level of diabetic retinopathy (SLDR) is developed without performing any pre- and post-processing steps on retinal fundus images through learning of deep visual features (DVFs). These DVF features are extracted from each image by using color dense in scale-invariant and gradient location-orientation histogram techniques. To learn these DVF features, a semi-supervised multilayer deep-learning algorithm is utilized along with a new compressed layer and fine-tuning steps. This SLDR system was evaluated and compared with state-of-the-art techniques using the measures of sensitivity (SE), specificity (SP) and area under the receiving operating curves (AUC). On 750 fundus images (150 per category), the SE of 92.18%, SP of 94.50% and AUC of 0.924 values were obtained on average. These results demonstrate that the SLDR system is appropriate for early detection of DR and provide an effective treatment for prediction type of diabetes.

  8. Sea-level and deep-sea-temperature variability over the past 5.3 million years.

    Science.gov (United States)

    Rohling, E J; Foster, G L; Grant, K M; Marino, G; Roberts, A P; Tamisiea, M E; Williams, F

    2014-04-24

    Ice volume (and hence sea level) and deep-sea temperature are key measures of global climate change. Sea level has been documented using several independent methods over the past 0.5 million years (Myr). Older periods, however, lack such independent validation; all existing records are related to deep-sea oxygen isotope (δ(18)O) data that are influenced by processes unrelated to sea level. For deep-sea temperature, only one continuous high-resolution (Mg/Ca-based) record exists, with related sea-level estimates, spanning the past 1.5 Myr. Here we present a novel sea-level reconstruction, with associated estimates of deep-sea temperature, which independently validates the previous 0-1.5 Myr reconstruction and extends it back to 5.3 Myr ago. We find that deep-sea temperature and sea level generally decreased through time, but distinctly out of synchrony, which is remarkable given the importance of ice-albedo feedbacks on the radiative forcing of climate. In particular, we observe a large temporal offset during the onset of Plio-Pleistocene ice ages, between a marked cooling step at 2.73 Myr ago and the first major glaciation at 2.15 Myr ago. Last, we tentatively infer that ice sheets may have grown largest during glacials with more modest reductions in deep-sea temperature.

  9. Constraints on sea level during the Pliocene: Records from the deep Pacific Ocean

    Science.gov (United States)

    Woodard, S. C.; Rosenthal, Y.; Miller, K. G.; Wright, J. D.; Chiu, B. K.

    2013-12-01

    To reconstruct sea level during the transition from peak late Pliocene warmth (~3.15 Ma) to the onset of N. Hemisphere glaciation (~2.75 Ma), we generated high resolution stable isotope (δ18O, δ13C) and trace metal (Mg/Ca) records using benthic foraminifera, Uvigerina sp., from northwest Pacific ODP Site 1208 (3350 m water depth). During the peak late Pliocene warmth Mg/Ca-derived temperature records indicate deep Pacific interglacial temperatures were not significantly warmer (+0.6 ×0.8°C) than modern and glacial temperatures were near freezing similar to the LGM. In contrast, the deep N. Atlantic (Site 607) was apparently ~3°C warmer than the modern during both Pliocene glacial and interglacial periods (Sosdian and Rosenthal, 2009), based on the Mg/Ca of P. wuellerstorfi, which may be influenced by carbonate ion effect (Elderfield et al., 2009 and refs therein). δ18O records indicate a significant long-term increase in benthic δ18O in both the N. Atlantic and N. Pacific, although the rate of increase (Δδ18O) in the N. Atlantic is approximately 3x that of the N. Pacific (Site 1208), based on least squares regressions of all glacial-interglacial data. The discrepancy in the Δδ18O between the two basins is explained by Mg/Ca-derived temperature records. Results from Site 1208 show that the deep Pacific experienced no long-term cooling over the period 3.15-2.7 Ma when the deep N. Atlantic cooled by ~2.5°C on average. The relatively stable Pacific deep-water record provides the more reliable reconstructions of sea-level changes. From 3.15-2.7 Ma, Pacific δ18O data records an average increase of ~0.19× 0.08 per mil implying a sea level drop of 19 m × 8 m. After correcting the N. Atlantic record for temperature, we find the long term δ18O change from 3.15-2.7 Ma is ~0.23×0.1 per mil which equates to a peak of 23 m × 10 m. Our estimates are further corroborated by foraminiferal calcite δ18O recorded during Pliocene peak interglacials KM3 and G17. The

  10. Electronic structure of deep levels in silicon. A study of gold, magnesium, and iron centers in silicon

    International Nuclear Information System (INIS)

    Thilderkvist, A. L.

    1994-02-01

    The electronic structure of gold, magnesium and iron related deep centers in silicon is investigated. Their deep and shallow levels are studied by means of fourier transform spectroscopy, combined with uniaxial stress and Zeeman spectroscopy. The neutral substitutional gold center in silicon is investigated and the center is paramagnetic, S=1/2, with g||≅2.8 and g≅0, and has a static distortion. Reorientation between different equivalent distortions is observed even at 1.9 K. A gold pair center in silicon is studied and several line series, with a zero-phonon line followed by several phonon replicas, are observed. Uniaxial stress and Zeeman results reveal a trigonal symmetry of the center, which together with the high dissociation energy of 1.7 eV suggests that the center consists of two nearest-neighbor substitutional gold atoms. A divacancy model is employed to explain the electronic properties of the center. The interstitial magnesium double donor in silicon in its two charge states Mg o and Mg + is investigated. Deviations in the binding energies of the excited states from those calculated within the effective-mass theory (EMT) are found and explained by a perturbation in the central-cell region. The quadratic Zeeman effect of shallow donors in silicon is analyzed within the framework of the EMT using a numerical approach. The wave functions are calculated in a discrete radial mesh and the Zeeman Hamiltonian has be evaluated for the lowest excited states for fields up to 6 T. The neutral interstitial iron defect in silicon gives rise to two sets of line spectra. The first set arises when an electron is excited to a shallow donor like state where the electron is decoupled from the Fe + core which has a 4 T 1 ground state term. The second set arises when an excited electron of a 1 symmetry is coupled by exchange interaction to the core, yielding at 5 T 1 final state. Experiments determine the multiplet splitting of the 4 T 1 and 5 T 1 states due to spring

  11. Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells

    International Nuclear Information System (INIS)

    Dharmarasu, Nethaji; Yamaguchi, Masafumi; Bourgoin, Jacques C.; Takamoto, Tatsuya; Ohshima, Takeshi; Itoh, Hisayoshi; Imaizumi, Mitsuru; Matsuda, Sumio

    2002-01-01

    We report the properties of observed defects in n + /p-InGaP solar cells created by irradiation of protons of different energies. Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (E v +0.90±0.05 eV), HP2 (E v +0.73±0.05 eV), H2 (E v +0.55 eV), and EP1 (E c -0.54 eV), were identified using deep level transient spectroscopy. All majority-carrier traps were found to act as recombination centers. While the H2 trap present in the proton-irradiated p-InGaP was found to anneal out by minority-carrier injection, the other traps were not

  12. Should the U.S. proceed to consider licensing deep geological disposal of high-level nuclear waste

    International Nuclear Information System (INIS)

    Curtiss, J.R.

    1993-01-01

    The United States, as well as other countries facing the question of how to handle high-level nuclear waste, has decided that the most appropriate means of disposal is in a deep geologic repository. In recent years, the Radioactive Waste Management Committee of the Nuclear Energy Agency has developed several position papers on the technical achievability of deep geologic disposal, thus demonstrating the serious consideration of deep geologic disposal in the international community. The Committee has not, as yet, formally endorsed disposal in a deep geologic repository as the preferred method of handling high-level nuclear waste. The United States, on the other hand, has studied the various methods of disposing of high-level nuclear waste, and has determined that deep geologic disposal is the method that should be developed. The purpose of this paper is to present a review of the United States' decision on selecting deep geologic disposal as the preferred method of addressing the high-level waste problem. It presents a short history of the steps taken by the U.S. in determining what method to use, discusses the NRC's waste Confidence Decision, and provides information on other issues in the U.S. program such as reconsideration of the final disposal standard and the growing inventory of spent fuel in storage

  13. TECHNICAL AND ECONOMIC EVALUATION OF OPTIMAL VOLTAGE LEVEL FOR THE POWER SUPPLY OF DEEP MINE OPERATING HORIZONS

    OpenAIRE

    Shkrabets, F. P.; Ostapchuk, O. V.; Kozhevnikov, A. V.; Akulov, A. V.

    2015-01-01

    The most perspective option for possible deep mine power supply is the one with the deep input of 35 kV voltage by installing of underground 35kV/6 kV substation. This option is caused by the expected level of electrical loads, provided by mine development, the power consumers’ deep layout (considering the distance from the source to the shaft on the surface and from the shaft to the underground substation chamber) and primary and the most responsible power consumers (blind shaft lifting devi...

  14. Core-level photoabsorption study of defects and metastable bonding configurations in boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez, I.; Jankowski, A.F.; Terminello, L.J. [Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    Boron nitride is an interesting material for technological applications and for fundamental solid state physics investigations. It is a compound isoelectronic with carbon and, like carbon can possess sp{sup 2} and sp{sup 3} bonded phases resembling graphite and diamond. BN crystallizes in the sp{sup 2}-bonded hexagonal (h-BN), rhombohedral (r-BN) and turbostratic phases, and in the sp{sup 3}-bonded cubic (c-BN) and wurtzite (w-BN) phases. A new family of materials is obtained when replacing C-C pairs in graphite with isoelectronic B-N pairs, resulting in C{sub 2}BN compounds. Regarding other boron compounds, BN is exceptional in the sense that it has standard two-center bonds with conventional coordination numbers, while other boron compounds (e.g. B{sub 4}C) are based on the boron icosahedron unit with three-center bonds and high coordination numbers. The existence of several allotropic forms and fullerene-like structures for BN suggests a rich variety of local bonding and poses the questions of how this affects the local electronic structure and how the material accommodates the stress induced in the transition regions between different phases. One would expect point defects to play a crucial role in stress accommodation, but these must also have a strong influence in the electronic structure, since the B-N bond is polar and a point defect will thus be a charged structure. The study of point defects in relationship to the electronic structure is of fundamental interest in these materials. Recently, the authors have shown that Near-Edge X-ray Absorption Fine Structure (NEXAFS) is sensitive to point defects in h-BN, and to the formation of metastable phases even in amorphous materials. This is significant since other phase identification techniques like vibrational spectroscopies or x-ray diffraction yield ambiguous results for nanocrystalline and amorphous samples. Serendipitously, NEXAFS also combines chemical selectivity with point defect sensitivity.

  15. Mathematical modelling of heat production in deep geological repository of high-level nuclear waste

    International Nuclear Information System (INIS)

    Kovanda, O.

    2017-01-01

    Waste produced by nuclear industry requires special handling. Currently, there is a research taking place, focused at possibilities of nuclear waste storage in deep geological repositories, hosted in stable geological environment. The high-level nuclear waste produces significant amount of heat for a long time, which can affect either environment outside of or within the repository in a negative way. Therefore to reduce risks, it is desirable to know the principles of such heat production, which can be achieved using mathematical modeling. This thesis comes up with a general model of heat production-time dependency, dependable on initial composition of the waste. To be able to model real situations, output of this thesis needs to be utilized in an IT solution. (authors)

  16. OPG's deep geologic repository for low and intermediate level waste - recent progress

    International Nuclear Information System (INIS)

    King, F.K.

    2006-01-01

    This paper provides a status report on Canada's first project to build a permanent repository for the long-term management of radioactive waste. Ontario Power Generation has initiated a project to construct a deep geologic repository for low- and intermediate-level waste at the Bruce Nuclear Site, at a depth in the range of 600 to 800 m in an Ordovician-age argillaceous limestone formation. The project is currently undergoing an Environmental Assessment and consulting companies in the areas of environmental assessment, geoscientific site characterization, engineering and safety assessment have been hired and technical studies are underway. Seismic surveys and borehole drilling will be initiated in the fall of 2006. The next major milestone for the project is the submission of the Environmental Assessment report, currently scheduled for December 2008. (author)

  17. Symmetrical analysis of the defect level splitting in two-dimensional photonic crystals

    International Nuclear Information System (INIS)

    Malkova, N; Kim, S; Gopalan, V

    2003-01-01

    In this paper doubly degenerate defect states in the band gap of the two-dimensional photonic crystal are studied. These states can be split by a convenient distortion of the lattice. Through analogy with the Jahn-Teller effect in solids, we present a group theoretical analysis of the lifting of the degeneracy of doubly degenerate states in a square lattice by different vibronic modes. The effect is supported by the supercell plane-wave model and by the finite difference time domain technique. We suggest ways for using the effect in photonic switching devices and waveguides

  18. Suppression and enhancement of deep level emission of ZnO on Si4+ & V5+ substitution

    Science.gov (United States)

    Srivastava, T.; Bajpai, G.; Sen, S.

    2018-03-01

    ZnO possess a wide range of tunable properties depending on the type and concentration of dopant. Defects in ZnO due to doped aliovalent ions can generate certain functionalities. Such defects in the lattice do not deteriorate the material properties but actually modifies the material towards infinite number of possibilities. Defects like oxygen vacancies play a significant role in photocatalytic and sensing applications. Depending upon the functionality, defect state of ZnO can be modified by suitable doping. Amount and nature of different dopant has different effect on defect state of ZnO. It depends upon the ionic radii, valence state, chemical stability etc. of the ion doped. Two samples with two different dopants i.e., silicon and vanadium, Zn1-xSixO and Zn1-xVxO, for x=0 & 0.020, were synthesized using solgel method (a citric acid-glycerol route) followed by solid state sintering. A comparison of their optical properties, photoluminescence and UV-Vis spectroscopy, with pure ZnO was studied at room temperature. Silicon doping drastically reduces whereas vanadium doping enhances the green emission as compared with pure ZnO. Suppression and enhancement of defect levels (DLE) is rationalized by the effects of extra charge present on Si4+ & V5+ (in comparison to Zn2+) and formation of new hybrid state (V3d O2p) within bandgap. Reduction of defects in Zn1-xSixO makes it suitable material for opto-electronics application whereas enhancement in defects in Zn1-xVxO makes it suitable material for photocatalytic as well as gas sensing application.

  19. Evolution of Defect Structures and Deep Subgap States during Annealing of Amorphous In-Ga-Zn Oxide for Thin-Film Transistors

    Science.gov (United States)

    Jia, Junjun; Suko, Ayaka; Shigesato, Yuzo; Okajima, Toshihiro; Inoue, Keiko; Hosomi, Hiroyuki

    2018-01-01

    We investigate the evolution behavior of defect structures and the subgap states in In-Ga-Zn oxide (IGZO) films with increasing postannealing temperature by means of extended x-ray absorption fine-structure (EXAFS) measurements, positron annihilation lifetime spectroscopy (PALS), and cathodoluminescence (CL) spectroscopy, aiming to understand the relationship between defect structures and subgap states. EXAFS measurements reveal the varied oxygen coordination numbers around cations during postannealing and confirm two types of point defects, namely, excess oxygen around Ga atoms and oxygen deficiency around In and/or Zn atoms. PALS suggests the existence of cation-vacancy (VM )-related clusters with neutral or negative charge in both amorphous and polycrystalline IGZO films. CL spectra show a main emission band at approximately 1.85 eV for IGZO films, and a distinct shoulder located at about 2.15 eV for IGZO films postannealed above 600 °C . These two emission bands are assigned to a recombination between the electrons in the conduction band and/or in the shallow donor levels near the conduction band and the acceptors trapped above the valence-band maximum. The shallow donors are attributed to the oxygen deficiency, and the acceptors are thought to possibly arise from the excess oxygen or the VM-related clusters. These results open up an alternative route for understanding the device instability of amorphous IGZO-based thin-film transistors, especially the presence of the neutral or negatively charged VM-related clusters in amorphous IGZO films.

  20. Deep repository for long-lived low- and intermediate-level waste. Preliminary safety assessment

    International Nuclear Information System (INIS)

    1999-11-01

    A preliminary safety assessment has been performed of a deep repository for long-lived low- and intermediate-level waste, SFL 3-5. The purpose of the study is to investigate the capacity of the facility to act as a barrier to the release of radionuclides and toxic pollutants, and to shed light on the importance of the location of the repository site. A safety assessment (SR 97) of a deep repository for spent fuel has been carried out at the same time. In SR 97, three hypothetical repository sites have been selected for study. These sites exhibit fairly different conditions in terms of hydrogeology, hydrochemistry and ecosystems. To make use of information and data from the SR 97 study, we have assumed that SFL 3-5 is co-sited with the deep repository for spent fuel. A conceivable alternative is to site SFL 3-5 as a completely separate repository. The focus of the SFL 3-5 study is a quantitative analysis of the environmental impact for a reference scenario, while other scenarios are discussed and analyzed in more general terms. Migration in the repository's near- and far-field has been taken into account in the reference scenario. Environmental impact on the three sites has also been calculated. The calculations are based on an updated forecast of the waste to be disposed of in SFL 3-5. The forecast includes radionuclide content, toxic metals and other substances that have a bearing on a safety assessment. The safety assessment shows how important the site is for safety. Two factors stand out as being particularly important: the water flow at the depth in the rock where the repository is built, and the ecosystem in the areas on the ground surface where releases may take place in the future. Another conclusion is that radionuclides that are highly mobile and long-lived, such as 36 Cl and 93 Mo , are important to take into consideration. Their being long-lived means that barriers and the ecosystems must be regarded with a very long time horizon

  1. Deep repository for long-lived low- and intermediate-level waste. Preliminary safety assessment

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-11-01

    A preliminary safety assessment has been performed of a deep repository for long-lived low- and intermediate-level waste, SFL 3-5. The purpose of the study is to investigate the capacity of the facility to act as a barrier to the release of radionuclides and toxic pollutants, and to shed light on the importance of the location of the repository site. A safety assessment (SR 97) of a deep repository for spent fuel has been carried out at the same time. In SR 97, three hypothetical repository sites have been selected for study. These sites exhibit fairly different conditions in terms of hydrogeology, hydrochemistry and ecosystems. To make use of information and data from the SR 97 study, we have assumed that SFL 3-5 is co-sited with the deep repository for spent fuel. A conceivable alternative is to site SFL 3-5 as a completely separate repository. The focus of the SFL 3-5 study is a quantitative analysis of the environmental impact for a reference scenario, while other scenarios are discussed and analyzed in more general terms. Migration in the repository's near- and far-field has been taken into account in the reference scenario. Environmental impact on the three sites has also been calculated. The calculations are based on an updated forecast of the waste to be disposed of in SFL 3-5. The forecast includes radionuclide content, toxic metals and other substances that have a bearing on a safety assessment. The safety assessment shows how important the site is for safety. Two factors stand out as being particularly important: the water flow at the depth in the rock where the repository is built, and the ecosystem in the areas on the ground surface where releases may take place in the future. Another conclusion is that radionuclides that are highly mobile and long-lived, such as {sup 36}Cl and {sup 93}Mo , are important to take into consideration. Their being long-lived means that barriers and the ecosystems must be regarded with a very long time horizon.

  2. Studies of electron-hole recombination processes at deep levels in GaAs and GaP by means of transient optical absorption spectroscopy

    International Nuclear Information System (INIS)

    Sugiyama, T.; Ishikawa, Y.; Tanimura, K.; Hayashi, Y.; Itoh, N.

    1989-01-01

    Studies of recombination processes by means of transient optical absorption (TOA) spectroscopy in GaAs and GaP are reviewed. It is pointed out that the technique can reveal production of excited states having long lifetimes and of non-luminescent metastable states. Two distinct recombination processes in GaAs containing EL2 defects are discussed: one is at the metastable EL2 defects, accompanied with transformation to the EL2 defects and the other is at deep acceptors through pair recombination. (author) 11 refs., 2 figs

  3. The effects of deep level traps on the electrical properties of semi-insulating CdZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Zha, Gangqiang; Yang, Jian; Xu, Lingyan; Feng, Tao; Wang, Ning; Jie, Wanqi [State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi' an (China)

    2014-01-28

    Deep level traps have considerable effects on the electrical properties and radiation detection performance of high resistivity CdZnTe. A deep-trap model for high resistivity CdZnTe was proposed in this paper. The high resistivity mechanism and the electrical properties were analyzed based on this model. High resistivity CdZnTe with high trap ionization energy E{sub t} can withstand high bias voltages. The leakage current is dependent on both the deep traps and the shallow impurities. The performance of a CdZnTe radiation detector will deteriorate at low temperatures, and the way in which sub-bandgap light excitation could improve the low temperature performance can be explained using the deep trap model.

  4. Pixel-Level Deep Segmentation: Artificial Intelligence Quantifies Muscle on Computed Tomography for Body Morphometric Analysis.

    Science.gov (United States)

    Lee, Hyunkwang; Troschel, Fabian M; Tajmir, Shahein; Fuchs, Georg; Mario, Julia; Fintelmann, Florian J; Do, Synho

    2017-08-01

    Pretreatment risk stratification is key for personalized medicine. While many physicians rely on an "eyeball test" to assess whether patients will tolerate major surgery or chemotherapy, "eyeballing" is inherently subjective and difficult to quantify. The concept of morphometric age derived from cross-sectional imaging has been found to correlate well with outcomes such as length of stay, morbidity, and mortality. However, the determination of the morphometric age is time intensive and requires highly trained experts. In this study, we propose a fully automated deep learning system for the segmentation of skeletal muscle cross-sectional area (CSA) on an axial computed tomography image taken at the third lumbar vertebra. We utilized a fully automated deep segmentation model derived from an extended implementation of a fully convolutional network with weight initialization of an ImageNet pre-trained model, followed by post processing to eliminate intramuscular fat for a more accurate analysis. This experiment was conducted by varying window level (WL), window width (WW), and bit resolutions in order to better understand the effects of the parameters on the model performance. Our best model, fine-tuned on 250 training images and ground truth labels, achieves 0.93 ± 0.02 Dice similarity coefficient (DSC) and 3.68 ± 2.29% difference between predicted and ground truth muscle CSA on 150 held-out test cases. Ultimately, the fully automated segmentation system can be embedded into the clinical environment to accelerate the quantification of muscle and expanded to volume analysis of 3D datasets.

  5. Chloroplast phylogenomic analyses resolve deep-level relationships of an intractable bamboo tribe Arundinarieae (poaceae).

    Science.gov (United States)

    Ma, Peng-Fei; Zhang, Yu-Xiao; Zeng, Chun-Xia; Guo, Zhen-Hua; Li, De-Zhu

    2014-11-01

    The temperate woody bamboos constitute a distinct tribe Arundinarieae (Poaceae: Bambusoideae) with high species diversity. Estimating phylogenetic relationships among the 11 major lineages of Arundinarieae has been particularly difficult, owing to a possible rapid radiation and the extremely low rate of sequence divergence. Here, we explore the use of chloroplast genome sequencing for phylogenetic inference. We sampled 25 species (22 temperate bamboos and 3 outgroups) for the complete genome representing eight major lineages of Arundinarieae in an attempt to resolve backbone relationships. Phylogenetic analyses of coding versus noncoding sequences, and of different regions of the genome (large single copy and small single copy, and inverted repeat regions) yielded no well-supported contradicting topologies but potential incongruence was found between the coding and noncoding sequences. The use of various data partitioning schemes in analysis of the complete sequences resulted in nearly identical topologies and node support values, although the partitioning schemes were decisively different from each other as to the fit to the data. Our full genomic data set substantially increased resolution along the backbone and provided strong support for most relationships despite the very short internodes and long branches in the tree. The inferred relationships were also robust to potential confounding factors (e.g., long-branch attraction) and received support from independent indels in the genome. We then added taxa from the three Arundinarieae lineages that were not included in the full-genome data set; each of these were sampled for more than 50% genome sequences. The resulting trees not only corroborated the reconstructed deep-level relationships but also largely resolved the phylogenetic placements of these three additional lineages. Furthermore, adding 129 additional taxa sampled for only eight chloroplast loci to the combined data set yielded almost identical

  6. Electrical fingerprint of pipeline defects

    International Nuclear Information System (INIS)

    Mica, Isabella; Polignano, Maria Luisa; Marco, Cinzia De

    2004-01-01

    Pipeline defects are dislocations that connect the source region of the transistor with the drain region. They were widely reported to occur in CMOS, BiCMOS devices and recently in SOI technologies. They can reduce device yield either by affecting the devices functionality or by increasing the current consumption under stand-by conditions. In this work the electrical fingerprint of these dislocations is studied, its purpose is to enable us to identify these defects as the ones responsible for device failure. It is shown that the pipeline defects are responsible for a leakage current from source to drain in the transistors. This leakage has a resistive characteristic and it is lightly modulated by the body bias. It is not sensitive to temperature; vice versa the off-current of a good transistor exhibits the well-known exponential dependence on 1/T. The emission spectrum of these defects was studied and compared with the spectrum of a good transistor. The paper aims to show that the spectrum of a defective transistor is quite peculiar; it shows well defined peaks, whereas the spectrum of a good transistor under saturation conditions is characterized by a broad spectral light emission distribution. Finally the deep-level transient spectroscopy (DLTS) is tried on defective diodes

  7. Utility of Deep Inspiration Breath Hold for Left-Sided Breast Radiation Therapy in Preventing Early Cardiac Perfusion Defects: A Prospective Study

    Energy Technology Data Exchange (ETDEWEB)

    Zagar, Timothy M., E-mail: zagar@med.unc.edu [Department of Radiation Oncology, University of North Carolina, Chapel Hill, North Carolina (United States); Kaidar-Person, Orit [Department of Radiation Oncology, University of North Carolina, Chapel Hill, North Carolina (United States); Tang, Xiaoli [Memorial Sloan Kettering Cancer Center, West Harrison, New York (United States); Jones, Ellen E.; Matney, Jason; Das, Shiva K.; Green, Rebecca L. [Department of Radiation Oncology, University of North Carolina, Chapel Hill, North Carolina (United States); Sheikh, Arif [Department of Radiology, Columbia University, New York, New York (United States); Khandani, Amir H.; McCartney, William H.; Oldan, Jorge Daniel; Wong, Terence Z. [Department of Radiology, University of North Carolina, Chapel Hill, North Carolina (United States); Marks, Lawrence B. [Department of Radiation Oncology, University of North Carolina, Chapel Hill, North Carolina (United States)

    2017-04-01

    Purpose: To evaluate early cardiac single photon computed tomography (SPECT) findings after left breast/chest wall postoperative radiation therapy (RT) in the setting of deep inspiration breath hold (DIBH). Methods and Materials: We performed a prospective single-institution single-arm study of patients who were planned for tangential RT with DIBH to the left breast/chest wall (± internal mammary nodes). The DIBH was done by use of a controlled surface monitoring technique (AlignRT, Vision RT Ltd, London, UK). The RT was given with tangential fields and a heart block. Radiation-induced cardiac perfusion and wall motion changes were assessed by pre-RT and 6-month post-RT SPECT scans. A cumulative SPECT summed-rest score was used to quantify perfusion in predefined left ventricle segments. The incidence of wall motion abnormalities was assessed in each of these same segments. Results: A total of 20 patients with normal pre-RT scans were studied; their median age was 56 years (range, 39-72 years). Seven (35%) patients also received irradiation to the left internal mammary chain, and 5 (25%) received an additional RT field to supraclavicular nodes. The median heart dose was 94 cGy (range, 56-200 cGy), and the median V25{sub Gy} was zero (range, 0-0.1). None of the patients had post-RT perfusion or wall motion abnormalities. Conclusions: Our results suggest that DIBH and conformal cardiac blocking for patients receiving tangential RT for left-sided breast cancer is an effective means to avoid early RT-associated cardiac perfusion defects.

  8. Critical congenital heart defects and abnormal levels of routinely collected first- and second-trimester biomarkers.

    Science.gov (United States)

    Borelli, Melissa; Baer, Rebecca J; Chambers, Christina D; Smith, Tyler C; Jelliffe-Pawlowski, Laura L

    2017-02-01

    We examined the association between maternal characteristics, routinely collected first- and second-trimester biomarkers and the risk of having an infant with a critical congenital heart defect (CCHD). Included were women who participated in the California Prenatal Screening Program who had nuchal translucency (NT) measurement and first- and second-trimester serum screening. All pregnancies ended in a live birth of an infant without aneuploidy or a neural tube defect. Poisson regression analyses were used to estimate the relative risk and 95% confidence interval of a CCHD by maternal characteristics, first- and second-trimester serum biomarkers or NT measurements. The sample included 118,194 mother-infant pairs; 284 infants had a CCHD. Women with preexisting diabetes were three-times as likely to have an infant with a CCHD. After adjusting for preexisting diabetes, women with first-trimester human chorionic gonatotropin (hCG) measurement <10th centile were 1.6-times as likely to have an infant with a CCHD (P = 0.011). Women with a NT measurement ≥95th centile were at two- to threefold higher risk of having an infant with a CCHD (P's = 0.004-0.007). Pregnancies with two risk factors for an infant with a CCHD were 5.6-times more likely to have an infant with a CCHD than women with no identified risk factors (P < 0.001). Despite the increased risk, performance testing demonstrated low sensitivity and specificity for screening use of these risk factors. Of the women with an infant with a CCHD, only 21.8% had an identified risk factor. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

  9. Carrier removal and defect behavior in p-type InP

    Science.gov (United States)

    Weinberg, I.; Swartz, C. K.; Drevinsky, P. J.

    1992-01-01

    A simple expression, obtained from the rate equation for defect production, was used to relate carrier removal to defect production and hole trapping rates in p-type InP after irradiation by 1-MeV electrons. Specific contributions to carrier removal from defect levels H3, H4, and H5 were determined from combined deep-level transient spectroscopy (DLTS) and measured carrier concentrations. An additional contribution was attributed to one or more defects not observed by the present DLTS measurements. The high trapping rate observed for H5 suggests that this defect, if present in relatively high concentration, could be dominant in p-type InP.

  10. DNCON2: improved protein contact prediction using two-level deep convolutional neural networks.

    Science.gov (United States)

    Adhikari, Badri; Hou, Jie; Cheng, Jianlin

    2018-05-01

    Significant improvements in the prediction of protein residue-residue contacts are observed in the recent years. These contacts, predicted using a variety of coevolution-based and machine learning methods, are the key contributors to the recent progress in ab initio protein structure prediction, as demonstrated in the recent CASP experiments. Continuing the development of new methods to reliably predict contact maps is essential to further improve ab initio structure prediction. In this paper we discuss DNCON2, an improved protein contact map predictor based on two-level deep convolutional neural networks. It consists of six convolutional neural networks-the first five predict contacts at 6, 7.5, 8, 8.5 and 10 Å distance thresholds, and the last one uses these five predictions as additional features to predict final contact maps. On the free-modeling datasets in CASP10, 11 and 12 experiments, DNCON2 achieves mean precisions of 35, 50 and 53.4%, respectively, higher than 30.6% by MetaPSICOV on CASP10 dataset, 34% by MetaPSICOV on CASP11 dataset and 46.3% by Raptor-X on CASP12 dataset, when top L/5 long-range contacts are evaluated. We attribute the improved performance of DNCON2 to the inclusion of short- and medium-range contacts into training, two-level approach to prediction, use of the state-of-the-art optimization and activation functions, and a novel deep learning architecture that allows each filter in a convolutional layer to access all the input features of a protein of arbitrary length. The web server of DNCON2 is at http://sysbio.rnet.missouri.edu/dncon2/ where training and testing datasets as well as the predictions for CASP10, 11 and 12 free-modeling datasets can also be downloaded. Its source code is available at https://github.com/multicom-toolbox/DNCON2/. chengji@missouri.edu. Supplementary data are available at Bioinformatics online.

  11. Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

    Energy Technology Data Exchange (ETDEWEB)

    Pousset, J.; Farella, I.; Cola, A., E-mail: adriano.cola@le.imm.cnr.it [Institute for Microelectronics and Microsystems—Unit of Lecce, National Council of Research (IMM/CNR), Lecce I-73100 (Italy); Gambino, S. [Dipartimento di Matematica e Fisica “Ennio De Giorgi,” Università del Salento, Lecce I-73100 (Italy); CNR NANOTEC—Istituto di Nanotecnologia, Polo di Nanotecnologia c/o Campus Ecotekne, via Monteroni, 73100 Lecce (Italy)

    2016-03-14

    We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

  12. Subgap time of flight: A spectroscopic study of deep levels in semi-insulating CdTe:Cl

    International Nuclear Information System (INIS)

    Pousset, J.; Farella, I.; Cola, A.; Gambino, S.

    2016-01-01

    We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.

  13. Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN

    International Nuclear Information System (INIS)

    Khan, Aurangzeb; Gou, J.; Imazumi, M.; Yamaguchi, M.

    2007-01-01

    The authors present an investigation of 1 MeV electron irradiation-induced defects in p-InGaAsN and their impact on nitrogen-related defects. A hitherto existing nitrogen-related electron trap E1 (0.20 eV) shows a significant increase in concentration after 1 MeV electron irradiation. In addition, 1 MeV electron irradiation induced a hole trap H1 at energy of about 0.75 eV above the valence band. Isothermal annealing analysis indicates that E1 is a complex defect involving an interstitial or a substitutional atom in combination with some other defect, whose concentration is enhanced by irradiation. A correlation exists between the recovery of free carrier concentration and recovery of the E1 center to preradiation concentrations, which indicates the possibility of the E1 as an acceptorlike center

  14. High Defect Tolerance in Lead Halide Perovskite CsPbBr3.

    Science.gov (United States)

    Kang, Jun; Wang, Lin-Wang

    2017-01-19

    The formation energies and charge-transition levels of intrinsic point defects in lead halide perovskite CsPbBr 3 are studied from first-principles calculations. It is shown that the formation energy of dominant defect under Br-rich growth condition is much lower than that under moderate or Br-poor conditions. Thus avoiding the Br-rich condition can help to reduce the defect concentration. Interestingly, CsPbBr 3 is found to be highly defect-tolerant in terms of its electronic structure. Most of the intrinsic defects induce shallow transition levels. Only a few defects with high formation energies can create deep transition levels. Therefore, CsPbBr 3 can maintain its good electronic quality despite the presence of defects. Such defect tolerance feature can be attributed to the lacking of bonding-antibonding interaction between the conduction bands and valence bands.

  15. A poor sealing Scenario for Deep disposal of high level waste

    International Nuclear Information System (INIS)

    Weetjens, E.

    2005-01-01

    Especially for geological disposal options in clay, the safety of the repository relies chiefly on the performance of the host formation as the main barrier. Understandably, scenarios in which this clay barrier is somehow bypassed earn great concern in PA (Performance Assessment) studies. The Poor Sealing Scenario is one of those scenarios that have been recently studied by the PA section of the Waste and Disposal department in the framework of the Belgian programme on deep disposal of high-level radwaste in Boom Clay. This scenario hypothesises that at least one disposal gallery and an access shaft have been poorly sealed off, providing a preferential pathway for RNs (radionuclides). The scenario further assumes a severe climate change, which would invert the presently downward hydraulic gradient, such that the potential impact would be maximal. The main objective is assessing the contribution from two transport processes to the overall radionuclide migration from a spent fuel repository towards the Neogene aquifer. The processes considered are advective transport through the poorly sealed repository and diffusive transport through the host formation. In addition, we would like to identify the most influential parameters with respect to repository design and performance

  16. Environmental assessment for OPG's deep geologic repository for low and intermediate level waste

    International Nuclear Information System (INIS)

    Barker, D.; Rawlings, M.; Beal, A.

    2011-01-01

    The environmental assessment process for the Deep Geologic Repository (DGR) Project was initiated very early in the planning stages. Feasibility studies were initiated in 2003, after Ontario Power Generation (OPG) and the Municipality of Kincardine signed a Memorandum of Understanding agreeing to assess options for long-term management of low and intermediate level waste (L and ILW) options at the Bruce nuclear site. The location of the DGR, in the Municipality of Kincardine, is based on a willing and informed host community. The preferred approach, the DGR at the Bruce nuclear site, was advanced based on results of feasibility studies which looked at a number of options for long-term management of L&ILW and support from the local community and their elected representatives. The federal environmental assessment of the project was initiated following the signing of a Host Community Agreement and completion of a telephone poll, the results of which indicated that the majority of Municipality of Kincardine residents support the project. The environmental assessment began in 2006 as a comprehensive study and was ultimately referred to a joint review panel process in 2009. The environmental assessment considers the potential near-term effects of the construction and operations of the proposed project. Because of the nature of the project, the assessment of effects also considers long-term effects extending out to the million year time-frame, including effects of climate change, glaciations and seismic activity. (author)

  17. The study of fracture mineralization and relationship with high level radioactive waste of deep geological repository

    International Nuclear Information System (INIS)

    Reyes, Cristina N.

    2003-01-01

    Extensive investigations of the Ordovician, Dinantian and Permo-Triassic rocks of the Sellafield area of northwest England were undertaken by United Kingdom Nirex Ltd. as a possible national site for geological disposal of intermediate and low-level radioactive waste. Very detailed studies of fracture mineralisation at Sellafield were thus put in hand by Nirex Ltd. and the results summarised by the British Geological Survey. Deep (up to 2 km) boreholes were put down with excellent core recovery. It is generally agreed that the most significant pathway for the escape of all but a very few radionuclides is by solution in and advection of groundwater. In this context, rock fracture systems are particularly important because they offer a potentially rapid pathway to the surface and the biosphere. One striking aspect of this work is that the fracture mineralisation seemingly records major and rapid fluctuations in redox conditions -sometimes during apparently continuous precipitation of cements (ferroan and non-ferroan calcites, dolomite). Carbonate cements record variations in Fe 2+ availability. Fe(III) precipitates also as oxide (hematite) and Fe(II) as sulphide (pyrite). This study focuses on these elements and valence states and also on Mn; another element susceptible to redox controls but known to respond differently from Fe. Shallow sub-surface stores or repositories would be more likely to have oxidising or fluctuating redox conditions. The mineralisation sequences documented at Sellafield are potentially promising in this context. Ferroan carbonate cements are sensitive indicators of later movement of oxidising ground waters. (author)

  18. Application of systems analysis to the disposal of high level waste in deep ocean sediments

    International Nuclear Information System (INIS)

    De Marsily, G.; Dorp, F. van

    1982-01-01

    Emplacement in deep ocean sediments is one of the disposal options being considered for solidified high level radioactive waste. Task groups set up within the framework of the NEA Seabed Working Group have been studying many aspects of this option since 1976. The methods of systems analysis have been applied to enable the various parts of the problem to be assessed within an integrated framework. This paper describes the progress made by the Systems Analysis Task Group towards the development of an overall system model. The Task Group began by separating the problem into elements and defining the interfaces between these elements. A simple overall system model was then developed and used in both a preliminary assessment and a sensitivity analysis to identify the most important parameters. These preliminary analyses used a very simple model of the overall system and therefore the results cannot be used to draw any conclusions as to the acceptability of the sub-seabed disposal option. However they served to show the utility of the systems analysis method. The work of the other task groups will focus on the important parameters so that improved results can be fed back into an improved system model. Subsequent iterations will eventually provide an input to an acceptability decision. (Auth.)

  19. Levels of Polycyclic Aromatic Hydrocarbons in Maternal Serum and Risk of Neural Tube Defects in Offspring

    Science.gov (United States)

    2015-01-01

    Polycyclic aromatic hydrocarbons (PAHs) are ubiquitous environmental pollutants, and have been reported to be a risk factor for human neural tube defects (NTDs). We investigated the relationship between PAH concentrations in maternal serum and NTD risk in offspring using a case-control study design, and explored the link between PAH concentrations to household energy usage characteristics and life styles. One hundred and seventeen women who had NTD-affected pregnancies (cases) and 121 women who delivered healthy infants (controls) were recruited in Northern China. Maternal blood samples were collected at pregnancy termination or at delivery. Twenty-seven PAHs were measured by gas chromatography–mass spectrometry. The concentrations of 13 individual PAHs detected were significantly higher in the cases than in the controls. Clear dose–response relationships between concentrations of most individual PAHs and the risk of total NTDs or subtypes were observed, even when potential covariates were adjusted for. High-molecular-weight PAHs (H-PAHs) showed higher risk than low-molecular-weight PAHs (L-PAHs). No associations between PAH concentrations and indoor life styles and energy usage characteristics were observed. It was concluded that maternal exposure to PAHs was associated with an increased risk of NTDs, and H-PAHs overall posed a higher risk for NTDs than L-PAHs. PMID:25488567

  20. Total circulating microparticle levels are increased in patients with deep infiltrating endometriosis.

    Science.gov (United States)

    Munrós, J; Martínez-Zamora, M A; Tàssies, D; Coloma, J L; Torrente, M A; Reverter, J C; Carmona, F; Balasch, J

    2017-02-01

    Are the levels of total circulating cell-derived microparticles (cMPs) and circulating tissue factor-containing microparticles (cMP-TF) increased in patients with endometriosis? The levels of total cMP, but not cMP-TF, were higher in patients with endometriosis, and these were attributed to higher levels in patients with deep infiltrating endometriosis (DIE). Previous studies have reported elevated levels of total cMP in inflammatory conditions as well as higher levels of other inflammatory biomarkers in endometriosis. Increased expression of tissue factor (a transmembrane receptor for Factor VII/VIIa) in eutopic and ectopic endometrium from patients with endometriosis has been described. There is no previous data regarding total cMP and cMP-TF levels in patients with endometriosis. A prospective case-control study including two groups of patients was carried out. The E group included 65 patients with surgically confirmed endometriosis (37 with DIE lesions) and the C group comprises 33 women without surgical findings of any form of endometriosis. Patients and controls were recruited during the same 10-month period. Controls were the next patient without endometriosis undergoing surgery, after including two patients with endometriosis. Venous blood samples for total cMP and cMP-TF determinations were obtained at the time of surgery, before anesthesia at a tertiary care center. To assess total cMP, an ELISA functional assay was used and cMP-TF activity in plasma was measured using an ELISA kit. Total cMP levels in plasma were higher in the E group compared with the C group (P < 0.0001). The subanalysis of endometriosis patients with DIE or with ovarian endometriomas without DIE showed that total cMP levels were higher in the DIE group (P = 0.001). There were no statistically significant differences in cMP-TF levels among the groups analyzed. This is a preliminary study in which the sample size was arbitrarily decided, albeit in keeping with previous studies analyzing

  1. Strategic program for deep geological disposal of high level radioactive waste in China

    International Nuclear Information System (INIS)

    Wang Ju

    2004-01-01

    A strategic program for deep geological disposal of high level radioactive waste in China is proposed in this paper. A '3-step technical strategy': site selection and site characterization-site specific underground research laboratory-final repository, is proposed for the development of China's high level radioactive waste repository. The activities related with site selection and site characterization for the repository can be combined with those for the underground research laboratory. The goal of the strategy is to build China's repository around 2040, while the activities can be divided into 4 phases: 1) site selection and site characterization; 2) site confirmation and construction of underground research laboratory, 3) in-situ experiment and disposal demonstration, and 4) construction of repository. The targets and tasks for each phase are proposed. The logistic relationship among the activities is discussed. It is pointed out that the site selection and site characterization provide the basis for the program, the fundamental study and underground research laboratory study are the key support, the performance assessment plays a guiding role, while the construction of a qualified repository is the final goal. The site selection can be divided into 3 stages: comparison among pre-selected areas, comparison among pre-selected sites and confirmation of the final site. According to this strategy, the final site for China's underground research laboratory and repository will be confirmed in 2015, where the construction of an underground laboratory will be started. In 2025 the underground laboratory will have been constructed, while in around 2040, the construction of a final repository is to be completed

  2. Benefiting from deep-level diversity : How congruence between knowledge and decision rules improves team decision making and team perceptions

    NARCIS (Netherlands)

    Rink, Floor; Ellemers, Naomi

    In two experiments we show how teams can benefit from the presence of multiple sources of deep-level task-related diversity. We manipulated differences (vs. similarities) in task information and personal decision rules in dyads (Study 1) and three-person teams (Study 2). The results indicate that

  3. Coseismic and aseismic deformations associated with mining-induced seismic events located in deep level mines in South Africa

    CSIR Research Space (South Africa)

    Milev, A

    2013-10-01

    Full Text Available Two underground sites in a deep level gold mine in South Africa were instrumented by the Council for Scientific and Industrial Research (CSIR) with tilt meters and seismic monitors. One of the sites was also instrumented by Japanese-German...

  4. Transforming Passive Receptivity of Knowledge into Deep Learning Experiences at the Undergraduate Level: An Example from Music Theory

    Science.gov (United States)

    Ferenc, Anna

    2015-01-01

    This article discusses transformation of passive knowledge receptivity into experiences of deep learning in a lecture-based music theory course at the second-year undergraduate level through implementation of collaborative projects that evoke natural critical learning environments. It presents an example of such a project, addresses key features…

  5. Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

    International Nuclear Information System (INIS)

    Gassoumi, Malek; Mosbahi, Hana; Zaidi, Mohamed Ali; Gaquiere, Christophe; Maaref, Hassen

    2013-01-01

    Device performance and defects in AlGaN/GaN high-electron mobility transistors have been correlated. The effect of SiN/SiO 2 passivation of the surface of AlGaN/GaN high-electron mobility transistors on Si substrates is reported on DC characteristics. Deep level transient spectroscopy (DLTS) measurements were performed on the device after the passivation by a (50/100 nm) SiN/SiO 2 film. The DLTS spectra from these measurements showed the existence of the same electron trap on the surface of the device

  6. Social stakes of the reversibility in the deep storage of high level radioactive wastes

    International Nuclear Information System (INIS)

    Heriard-Dubreuil, G.; Schieber, C.; Schneider, T.

    1998-06-01

    This document proposes a study of the conditions which surrounded the reversibility introduction in high activity wastes deep storage at an international scale, as well as a reflexion on the social stakes associated there. In France, the law of december 30, 1991 concerning the research on the radioactive wastes prescribes '' the study of possibilities retrieval or non retrieval storage in deep geological deposits''. The analysis of the reversibility associated social stakes emphasizes the necessity to prevent irreversible consequences, to take care to the choices reversibility, to preserve the future generations autonomy. Thus to elaborate a more satisfactory solution between deep disposal and surface storage, a deep storage, capable of gradually evolution, concept is defined. (A.L.B.)

  7. Interaction of alpha radiation with thermally-induced defects in silicon

    International Nuclear Information System (INIS)

    Ali, Akbar; Majid, Abdul

    2008-01-01

    The interaction of radiation-induced defects created by energetic alpha particles and thermally-induced defects in silicon has been studied using a Deep Level Transient Spectroscopy (DLTS) technique. Two thermally-induced defects at energy positions E c -0.48 eV and E c -0.25 eV and three radiation-induced defects E2, E3 and E5 have been observed. The concentration of both of the thermally-induced defects has been observed to increase on irradiation. It has been noted that production rates of the radiation-induced defects are suppressed in the presence of thermally-induced defects. A significant difference in annealing characteristics of thermally-induced defects in the presence of radiation-induced defects has been observed compared to the characteristics measured in pre-irradiated samples

  8. Study of irradiation defects in GaAs

    International Nuclear Information System (INIS)

    Loualiche, S.

    1982-11-01

    Characterization techniques: C(V) differential capacity, DLTS deep level transient spectroscopy, DDLTS double deep level transient spectroscopy and DLOS deep level optical spectroscopy are studied and theoretical and experimental fundamentals are re-examined. In particular the centres created by ionic or electronic bombardment of p-type GaAs. New quantitative theoretical bases for the C(V) method are obtained. Study of the optical properties of traps due to irradiation using DLOS. The nature of irradiation defects are discussed [fr

  9. Influence of low-level laser therapy on the healing of human bone maxillofacial defects: A systematic review.

    Science.gov (United States)

    Santinoni, Carolina Dos Santos; Oliveira, Hiskell Francine Fernandes; Batista, Victor Eduardo de Souza; Lemos, Cleidiel Aparecido Araujo; Verri, Fellippo Ramos

    2017-04-01

    This systematic review evaluates the effectiveness of low-level laser therapy (LLLT) to enhance maxillofacial area bone repair. A comprehensive search of studies published up to February 2017 and listed in PubMed/MEDLINE, Scopus, and Cochrane Library databases was performed in accordance with the Preferred Reporting Items for Systematic Reviews and Meta-Analyses (PRISMA) statement. The 15 selected studies evaluated a total of 374 patients (mean age, 28.5years) who were treated with LLLT. Gallium-arsenide (GaAs) and gallium aluminium arsenide (GaAlAs) were the most commonly used devices, and LLLT parameters varied greatly. Wavelengths varied from 500 to 1000nm. Tooth extraction, distraction osteogenesis, maxillary expansion, periodontal defects, orthodontic movement and maxillary cystic defects were evaluated. From the 15 selected studies, six evaluated bone repair (primary outcomes). Of these, four studies showed improvement in bone formation after using LLLT, two demonstrated improved results for only one follow up period, and one showed no additional benefits. The other 9 studies evaluated secondary parameters related to healing (secondary outcomes) in the maxillofacial area after applying LLLT, including anti-inflammatory, analgesic, and healing accelerator effects, and quality of life related to oral health. There were no adverse or negative effects of LLLT reported. Within the limitation of this review, a possible improvement in bone density can be found when LLLT is applied postoperatively in maxillofacial bony defects. LLLT also seems to promote anti-inflammatory and analgesic effects and accelerate healing, as well as enhance quality of life related to oral health. However, LLLT use protocols need to be standardized before more specific conclusions can be drawn about this subject. Copyright © 2017 Elsevier B.V. All rights reserved.

  10. Increased levels of dioxin-like substances in adipose tissue in patients with deep infiltrating endometriosis.

    Science.gov (United States)

    Martínez-Zamora, M A; Mattioli, L; Parera, J; Abad, E; Coloma, J L; van Babel, B; Galceran, M T; Balasch, J; Carmona, F

    2015-05-01

    Are the levels of biologically active and the most toxic dioxin-like substances in adipose tissue of patients with deep infiltrating endometriosis (DIE) higher than in a control group without endometriosis? DIE patients have higher levels of dioxins and polychlorinated biphenyls (PCBs) in adipose tissue compared with controls without endometriosis. Some studies have investigated the levels of dioxin-like substances, in serum samples, in patients with endometriosis, with inconsistent results. Case-control study including two groups of patients. The study group (DIE group) consisted of 30 patients undergoing laparoscopic surgery because of DIE. In all patients, an extensive preoperative work-up was performed including clinical exploration, magnetic resonance imaging (MRI) and transvaginal sonography. All patients with DIE underwent a confirmatory histological study for DIE after surgery. The non-endometriosis control group (control group), included the next consecutive patient undergoing laparoscopic surgery in our center due to adnexal benign gynecological disease (ovarian or tubal procedures other than endometriosis) after each DIE patient, and who did not present any type of endometriosis. During the surgical procedure 1-2 g of adipose tissue from the omentum were obtained. Dioxin-like substances were analyzed in adipose tissue in DIE patients and controls without endometriosis. The total toxic equivalence and concentrations of both dioxins and PCBs were significantly higher in patients with DIE in comparison with the control group (P dioxins (2,3,7,8-tetrachlorodibenzo-p-dioxin [2,3,7,8-TCDD] and 1,2,3,7,8-pentachlorodibenzo-p-dioxin [1,2,3,7,8-PeCDD]) (P dioxins and PCBs widely vary in different countries. Furthermore, the strict eligibility criteria used may preclude generalization of the results to other populations and the surgery-based sampling frame may induce a selection bias. Finally, adipose tissue was obtained only from the omentum, and not from other

  11. Systems analysis approach to the disposal of high-level waste in deep ocean sediments

    International Nuclear Information System (INIS)

    Marsily, G. de; Hill, M.D.; Murray, C.N.; Talbert, D.M.; Van Dorp, F.; Webb, G.A.M.

    1980-01-01

    Among the different options being studied for disposal of high-level solidified waste, increasing attention is being paid to that of emplacement of glasses incorporating the radioactivity in deep oceanic sediments. This option has the advantage that the areas of the oceans under investigation appear to be relatively unproductive biologically, are relatively free from cataclysmic events, and are areas in which the natural processes are slow. Thus the environment is stable and predictable so that a number of barriers to the release and dispersion of radioactivity can be defined. Task Groups set up in the framework of the International Seabed Working Group have been studying many aspects of this option since 1976. In order that the various parts of the problem can be assessed within an integrated framework, the methods of systems analysis have been applied. In this paper the Systems Analysis Task Group members report the development of an overall system model. This will be used in an iterative process in which a preliminary analysis, together with a sensitivity analysis, identifies the parameters and data of most importance. The work of the other task groups will then be focussed on these parameters and data requirements so that improved results can be fed back into an improved overall systems model. The major requirements for the development of a preliminary overall systems model are that the problem should be separated into identified elements and that the interfaces between the elements should be clearly defined. The model evolved is deterministic and defines the problem elements needed to estimate doses to man

  12. Numerical investigation of high level nuclear waste disposal in deep anisotropic geologic repositories

    KAUST Repository

    Salama, Amgad

    2015-11-01

    One of the techniques that have been proposed to dispose high level nuclear waste (HLW) has been to bury them in deep geologic formations, which offer relatively enough space to accommodate the large volume of HLW accumulated over the years since the dawn of nuclear era. Albeit the relatively large number of research works that have been conducted to investigate temperature distribution surrounding waste canisters, they all abide to consider the host formations as homogeneous and isotropic. While this could be the case in some subsurface settings, in most cases, this is not true. In other words, subsurface formations are, in most cases, inherently anisotropic and heterogeneous. In this research, we show that even a slight difference in anisotropy of thermal conductivity of host rock with direction could have interesting effects on temperature fields. We investigate the effect of anisotropy angle (the angle the principal direction of anisotropy is making with the coordinate system) on the temperature field as well as on the maximum temperature attained in different barrier systems. This includes 0°, 30°, 45°, 60°, and 90°in addition to the isotropic case as a reference. We also consider the effect of anisotropy ratio (the ratio between the principal direction anisotropies) on the temperature fields and maximum temperature history. This includes ratios ranging between 1.5 and 4. Interesting patterns of temperature fields and profiles are obtained. It is found that the temperature contours are aligned more towards the principal direction of anisotropy. Furthermore the peak temperature in the buffer zone is found to be larger the smaller the anisotropy angle and vice versa. © 2015 Elsevier Ltd. All rights reserved.

  13. Trade Study of System Level Ranked Radiation Protection Concepts for Deep Space Exploration

    Science.gov (United States)

    Cerro, Jeffrey A

    2013-01-01

    A strategic focus area for NASA is to pursue the development of technologies which support exploration in space beyond the current inhabited region of low earth orbit. An unresolved issue for crewed deep space exploration involves limiting crew radiation exposure to below acceptable levels, considering both solar particle events and galactic cosmic ray contributions to dosage. Galactic cosmic ray mitigation is not addressed in this paper, but by addressing credible, easily implemented, and mass efficient solutions for the possibility of solar particle events, additional margin is provided that can be used for cosmic ray dose accumulation. As a result, NASA s Advanced Engineering Systems project office initiated this Radiation Storm Shelter design activity. This paper reports on the first year results of an expected 3 year Storm Shelter study effort which will mature concepts and operational scenarios that protect exploration astronauts from solar particle radiation events. Large trade space definition, candidate concept ranking, and a planned demonstration comprised the majority of FY12 activities. A system key performance parameter is minimization of the required increase in mass needed to provide a safe environment. Total system mass along with operational assessments and other defined protection system metrics provide the guiding metrics to proceed with concept developments. After a downselect to four primary methods, the concepts were analyzed for dosage severity and the amount of shielding mass necessary to bring dosage to acceptable values. Besides analytical assessments, subscale models of several concepts and one full scale concept demonstrator were created. FY12 work terminated with a plan to demonstrate test articles of two selected approaches. The process of arriving at these selections and their current envisioned implementation are presented in this paper.

  14. Increased Levels of NF-kB-Dependent Markers in Cancer-Associated Deep Venous Thrombosis.

    Science.gov (United States)

    Malaponte, Grazia; Signorelli, Salvatore S; Bevelacqua, Valentina; Polesel, Jerry; Taborelli, Martina; Guarneri, Claudio; Fenga, Concettina; Umezawa, Kazou; Libra, Massimo

    2015-01-01

    Several studies highlight the role of inflammatory markers in thrombosis as well as in cancer. However, their combined role in cancer-associated deep vein thrombosis (DVT) and the molecular mechanisms, involved in its pathophysiology, needs further investigations. In the present study, C-reactive protein, interleukin-6 (IL-6), tumor necrosis factor-α (TNF-α), interleukin-1 (IL-1β), matrix metalloproteases-9 (MMP-9), vascular endothelial growth factor (VEGF), tissue factor (TF), fibrinogen and soluble P-selectin, were analyzed in plasma and in monocyte samples from 385 cancer patients, of whom 64 were concomitantly affected by DVT (+). All these markers were higher in cancer patients DVT+ than in those DVT-. Accordingly, significantly higher NF-kB activity was observed in cancer patients DVT+ than DVT-. Significant correlation between data obtained in plasma and monocyte samples was observed. NF-kB inhibition was associated with decreased levels of all molecules in both cancer DVT+ and DVT-. To further demonstrate the involvement of NF-kB activation by the above mentioned molecules, we treated monocyte derived from healthy donors with a pool of sera from cancer patients with and without DVT. These set of experiments further suggest the significant role played by some molecules, regulated by NF-kB, and detected in cancer patients with DVT. Our data support the notion that NF-kB may be considered as a therapeutic target for cancer patients, especially those complicated by DVT. Treatment with NF-kB inhibitors may represent a possible strategy to prevent or reduce the risk of DVT in cancer patients.

  15. The structural integrity of high level waste containers for deep disposal

    International Nuclear Information System (INIS)

    Keer, T.J.; Martindale, N.J.; Haijtink, B.

    1990-01-01

    Most countries with a nuclear power program are developing plans to dispose of high level waste in deep geological repositories. These facilities are typically in the range 500-1000m below ground. Although long term safety analyses mainly rely on the isolation function of the geological barrier, for the medium term (between 500 and 1000 years) a barrier such as a container (overpack) may play an important role. This paper addresses the mechanical/structural behavior of these structures under extreme geological pressures. The work described in the paper was conducted within the COMPAS project (Container Mechanical Performance Assessment) funded by the Commission of the European Communities and the United Kingdom Department of the Environment. The work was aimed at predicting the modes of failure and failure pressures which characterize the heavy, thick walled mild steel containers which might be considered for the disposal of vitrified waste. The work involved a considerable amount of analytical work, using 3-D non-linear finite element techniques, coupled with a large parallel program of experimental work. The experimental work consisted of a number of scale model tests in which the response of the containers was examined under external pressures as high as 120MPa. Extensive strain-gauge instrumentation was used to record the behavior of the models as they were driven to collapse. A number of comparative computer calculations were carried out by organizations from various European countries. Correlations were established between experimental and analytical data and guidelines regarding the choice of suitable software were established. The work concluded with a full 3-D simulation of the behavior of a container under long-term disposal conditions. In this analysis, non-linearities due to geological effects and material/geometry effects in the container were properly accounted for. 6 refs., 9 figs., 4 tabs

  16. Optical properties and defect levels in a surface layer found on CuInSe{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Abulfotuh, F.; Wangensteen, T.; Ahrenkiel, R.; Kazmerski, L.L. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    In this paper the authors have used photoluminescence (PL) and wavelength scanning ellipsometry (WSE) to clarify the relationship among the electro-optical properties of copper indium diselenide (CIS) thin films, the type and origin of dominant defect states, and device performance. The PL study has revealed several shallow acceptor and donor levels dominating the semiconductor. PL emission from points at different depths from the surface of the CIS sample has been obtained by changing the angle of incidence of the excitation laser beam. The resulting data were used to determine the dominant defect states as a function of composition gradient at the surface of the chalcopyrite compound. The significance of this type of measurement is that it allowed the detection of a very thin layer with a larger bandgap (1.15-1.26 eV) than the CIS present on the surface of the CIS thin films. The presence of this layer has been correlated by several groups to improvement of the CIS cell performance. An important need that results from detecting this layer on the surface of the CIS semiconductor is the determination of its thickness and optical constants (n, k) as a function of wavelength. The thickness of this surface layer is about 500 {Angstrom}.

  17. The relationship between the deep-level structure in crust and brewing of strong earthquakes in Xingtai area

    Science.gov (United States)

    Xiao, Lan-Xi; Zhu, Yuan-Qing; Zhang, Shao-Quan; Liu, Xu; Guo, Yu

    1999-11-01

    In this paper, crust medium is treated as Maxwell medium, and crust model includes hard inclusion, soft inclusion, deep-level fault. The stress concentration and its evolution with time are obtained by using three-dimensional finite element method and differential method. The conclusions are draw as follows: (1) The average stress concentration and maximum shear stress concentration caused by non-heterogeneous of crust are very high in hard inclusion and around the deep fault. With the time passing by, the concentration of average stress in the model gradually trends to uniform. At the same time, the concentration of maximum shear stress in hard inclusion increases gradually. This character is favorable to transfer shear strain energy from soft inclusion to hard inclusion. (2) When the upper mantle beneath the inclusion upheave at a certain velocity of 1 cm/a, the changes of average stress concentration with time become complex, and the boundary of the hard and soft inclusion become unconspicuous, but the maximum shear stress concentration increases much more in the hard inclusion with time at a higher velocity. This feature make for transformation of energy from the soft inclusion to the hard inclusion. (3) The changes of average stress concentration and maximum shear stress concentration with time around the deep-level fault result in further accumulation of maximum shear stress concentration and finally cause the deep-level fault instable and accelerated creep along fault direction. (4) The changes of vertical displacement on the surface of the model, which is caused by the accelerated creep of the deep-level fault, is similar to that of the observation data before Xingtai strong earthquake.

  18. Molecular analyses reveal high levels of eukaryotic richness associated with enigmatic deep-sea protists (Komokiacea)

    DEFF Research Database (Denmark)

    Lecroq, Beatrice; Gooday, Andrew John; Cedhagen, Tomas

    2009-01-01

    Komokiaceans are testate agglutinated protists, extremely diverse and abundant in the deep sea. About 40 species are described and share the same main morpholog- ical feature: a test consisting of narrow branching tubules forming a complex system. In some species, the interstices between the tubu......Komokiaceans are testate agglutinated protists, extremely diverse and abundant in the deep sea. About 40 species are described and share the same main morpholog- ical feature: a test consisting of narrow branching tubules forming a complex system. In some species, the interstices between...... suggest strongly that komokiaceans, and probably many other large testate protists, provide a habitat structure for a large spectrum of eukaryotes, significantly contributing to maintaining the biodiversity of micro- and meiofaunal communities in the deep sea....

  19. The excited J = 01 Σu+ levels of D2: Measurements and ab initio quantum defect study

    Science.gov (United States)

    Glass-Maujean, M.; Jungen, Ch.; Dickenson, G. D.; de Oliveira, N.; Ubachs, W.

    2016-02-01

    The DESIRS beamline of the SOLEIL synchrotron facility, equipped with a vacuum ultraviolet Fourier-transform spectrometer has been used to measure P (N″ = 1) (N -N″ = - 1) absorption transitions of the D2 molecule. Some 44 P-lines were assigned and their transition frequencies determined up to excitation energies of 134,000 cm-1 above the ground state, thereby extending the earlier work by various authors, and considerably improving the spectral accuracy (<0.1 cm-1). The assignments have been aided by first principles multichannel quantum defect theory (MQDT) calculations. These calculations also provide predictions of the autoionization widths of the upper levels which agree well with the observed resonance widths.

  20. Study of silicon-silicon nitride interface properties on planar (1 0 0), planar (1 1 1) and textured surfaces using deep-level transient spectroscopy

    International Nuclear Information System (INIS)

    Gong, Chun; Simoen, Eddy; Posthuma, Niels E; Van Kerschaver, Emmanuel; Poortmans, Jef; Mertens, Robert

    2010-01-01

    Deep-level transient spectroscopy (DLTS) has been applied to metal-insulator-semiconductor (MIS) capacitors fabricated on planar (1 0 0), planar (1 1 1) orientations and textured n-type silicon wafers. Low frequency direct plasma-enhanced chemical vapour deposition Si-SiN x interface properties with and without plasma NH 3 pre-treatment, with and without rapid thermal annealing (RTA) have been investigated. It is shown that three different kinds of defect states are identified at the Si-SiN x interface. For the planar (1 0 0) surface, samples with plasma NH 3 pre-treatment plus RTA show the lowest DLTS signals, which suggests the lowest overall interface states density. For planar (1 1 1) Si surfaces, plasma NH 3 pre-treatment and RTA yield a small improvement. With the textured surface, the RTA step improves the surface passivation quality further but no obvious impact is found with plasma NH 3 pre-treatment. Energy-dependent electron capture cross sections were also measured by small-pulse DLTS. The capture cross sections depend strongly on the energy level and decrease towards the conduction band edge.

  1. Density Functional Theory Study on Defect Feature of AsGaGaAs in Gallium Arsenide

    Directory of Open Access Journals (Sweden)

    Deming Ma

    2015-01-01

    Full Text Available We investigate the defect feature of AsGaGaAs defect in gallium arsenide clusters in detail by using first-principles calculations based on the density functional theory (DFT. Our calculations reveal that the lowest donor level of AsGaGaAs defect on the gallium arsenide crystal surface is 0.85 eV below the conduction band minimum, while the lowest donor level of the AsGaGaAs defect inside the gallium arsenide bulk is 0.83 eV below the bottom of the conduction band, consistent with gallium arsenide EL2 defect level of experimental value (Ec-0.82 eV. This suggests that AsGaGaAs defect is one of the possible gallium arsenide EL2 deep-level defects. Moreover, our results also indicate that the formation energies of internal AsGaGaAs and surface AsGaGaAs defects are predicted to be around 2.36 eV and 5.54 eV, respectively. This implies that formation of AsGaGaAs defect within the crystal is easier than that of surface. Our results offer assistance in discussing the structure of gallium arsenide deep-level defect and its effect on the material.

  2. Decreased plasma levels of activated factor VII in patients with deep vein thrombosis

    NARCIS (Netherlands)

    Schut, A. M.; Meijers, J. C. M.; Lisman-van Leeuwen, Y.; van Montfoort, M. L.; Roest, M.; de Groot, P. G.; Urbanus, R. T.; Coppens, M.; Lisman, T.

    BackgroundThe initiating trigger in the development of deep vein thrombosis (DVT) remains unidentified. It has been suggested that tissue factor (TF)-bearing microparticles play a key role, which indicates a role for the TF pathway in the initiation of DVT. ObjectiveTo assess the role of the TF

  3. Decreased plasma levels of activated factor VII in patients with deep vein thrombosis

    NARCIS (Netherlands)

    Schut, A. M.; Meijers, J. C M; Lisman- van Leeuwen, Y.; van Montfoort, M. L.; Roest, M.; de Groot, P. G.; Urbanus, R. T.; Coppens, M.; Lisman, T.

    2015-01-01

    Background: The initiating trigger in the development of deep vein thrombosis (DVT) remains unidentified. It has been suggested that tissue factor (TF)-bearing microparticles play a key role, which indicates a role for the TF pathway in the initiation of DVT. Objective: To assess the role of the TF

  4. Decreased plasma levels of activated factor VII in patients with deep vein thrombosis

    NARCIS (Netherlands)

    Schut, A. M.; Meijers, J. C. M.; Lisman-van Leeuwen, Y.; van Montfoort, M. L.; Roest, M.; de Groot, P. G.; Urbanus, R. T.; Coppens, M.; Lisman, T.

    2015-01-01

    The initiating trigger in the development of deep vein thrombosis (DVT) remains unidentified. It has been suggested that tissue factor (TF)-bearing microparticles play a key role, which indicates a role for the TF pathway in the initiation of DVT. To assess the role of the TF pathway in the

  5. The behaviour of cemented backfill and the surrounding rockmass at western deep levels south mine

    CSIR Research Space (South Africa)

    York, G

    1992-11-01

    Full Text Available Cemented backfill is used at Western Deep Mine as local and regional support areas of high stopping width. The in situ performance is reported and compared to laboratory tests. A back analysis was carried out to obtain a more accurate value...

  6. SeaWiFS Deep Blue Aerosol Optical Thickness Monthly Level 3 Climatology Data Gridded at 0.5 Degrees V004

    Data.gov (United States)

    National Aeronautics and Space Administration — The SeaWiFS Deep Blue Level 3 Monthly Climatology Product contains monthly global climatology gridded (0.5 x 0.5 deg) data derived from SeaWiFS Deep Blue Level 3...

  7. Electronic defect levels in continuous wave laser annealed silicon metal oxide semiconductor devices

    Science.gov (United States)

    Cervera, M.; Garcia, B. J.; Martinez, J.; Garrido, J.; Piqueras, J.

    1988-09-01

    The effect of laser treatment on the bulk and interface states of the Si-SiO2 structure has been investigated. The annealing was performed prior to the gate metallization using a continuous wave Ar+ laser. For low laser powers the interface state density seems to decrease slightly in comparison with untreated samples. However, for the highest irradiating laser powers a new bulk level at 0.41 eV above the valence band with concentrations up to 1015 cm-3 arises probably due to the electrical activation of the oxygen diluted in the Czochralski silicon. Later postmetallization annealings reduce the interface state density to values in the 1010 cm-2 eV-1 range but leave the concentration of the 0.41-eV center nearly unchanged.

  8. Deep and shallow acceptor levels in solid solutions Pb0.98Sm0.02S

    International Nuclear Information System (INIS)

    Hasanov, H.A.; Rahimov, R.Sh.

    2010-01-01

    It is well known that the metal vacancies the energy levels of which take place between permitted energies of valency band, are the main acceptor centers in the led salts and solid solutions on their base. The aim of the given paper is founding of character of acceptor levels in single crystals Pb 0 .98Sm 0 .02S with low concentrations of charge carrier. The deep and shallow acceptor levels are found at investigation of Hall effect in Pb 0 .98Sm 0 .02S solid solution with character of low concentrations of charge carriers in crystals

  9. Ar plasma induced deep levels in epitaxial n-GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Venter, A.; Nyamhere, C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Auret, F. D.; Janse van Rensburg, P. J.; Meyer, W. E.; Coelho, S. M. M. [Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa); Kolkovsky, V. l. [Technische Universitaet, Dresden, 01062 Dresden (Germany)

    2012-01-01

    Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (E{sub c} - 0.04 eV, E{sub c} - 0.07 eV, E{sub c} - 0.19 eV, E{sub c} - 0.31 eV, E{sub c} - 0.53 eV, and E{sub c} - 0.61 eV). The trap, E{sub c} - 0.04 eV, labelled E1' and having a trap signature similar to irradiation induced defect E1, appears to be metastable. E{sub c} - 0.31 eV and E{sub c} - 0.61 eV are metastable too and they are similar to the M3/M4 defect configuration present in hydrogen plasma exposed n-GaAs.

  10. Ar plasma induced deep levels in epitaxial n-GaAs

    International Nuclear Information System (INIS)

    Venter, A.; Nyamhere, C.; Botha, J. R.; Auret, F. D.; Janse van Rensburg, P. J.; Meyer, W. E.; Coelho, S. M. M.; Kolkovsky, V. l.

    2012-01-01

    Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (E c - 0.04 eV, E c - 0.07 eV, E c - 0.19 eV, E c - 0.31 eV, E c - 0.53 eV, and E c - 0.61 eV). The trap, E c - 0.04 eV, labelled E1' and having a trap signature similar to irradiation induced defect E1, appears to be metastable. E c - 0.31 eV and E c - 0.61 eV are metastable too and they are similar to the M3/M4 defect configuration present in hydrogen plasma exposed n-GaAs.

  11. Summary report of a seminar on geosphere modelling requirements of deep disposal of low and intermediate level radioactive wastes

    International Nuclear Information System (INIS)

    Piper, D.; Paige, R.W.; Broyd, T.W.

    1989-02-01

    A seminar on the geosphere modelling requirements of deep disposal of low and intermediate level radioactive wastes was organised by WS Atkins Engineering Sciences as part of Her Majesty's Inspectorate of Pollution's Radioactive Waste Assessment Programme. The objectives of the seminar were to review geosphere modelling capabilities and prioritise, if possible, any requirements for model development. Summaries of the presentations and subsequent discussions are given in this report. (author)

  12. Assessing the Level of Disability, Deep Cervical Flexor Endurance and Fear Avoidance Beliefs in Bankers with Neck Pain

    Directory of Open Access Journals (Sweden)

    Deptee Warikoo

    2013-08-01

    Full Text Available Objective: To assess the level of disability, the deep cervical flexor endurance and fear avoidance beliefs (FAB in bankers with neck pain and to find a correlation between disability and deep cervical muscle endurance, FAB and disability, FAB and deep flexor muscle endurance. Methods: It ws an observational study. The Subjects who had neck pain and minimum 5 years’ experience as a Banker participated in the study. Total 100 subjects were selected. All the subjects were assessed for their disability by the neck pain and disability score (NPDI, their deep cervical flexor endurance using Pressure Biofeedback using Cranio-Cervical flexion test (CCFT and Fear Avoidance Belief by using questionnaire( FABQ. Results: It was found that bankers have a moderate level of disability. The results showed an elevated fear avoidance belief with a mean value of FABQ-PA 21.61±4.42 and FABQ-W 37.81± 5.69. The results indicated that a negative correlation was found between NPDI and CCFT (r=0.855. A positive correlation was found between NPDI and FABQ-PA(r=0.337, FABQ-W(r=0.500. In the present study a negative correlation was found between CCFT and FABQ-W(r=0.553, FABQ-PA (0.348 and positive correlation (r=0.540 was found between FABQ-PA and FABQ-W. Conclusion: The present study concluded that there was a significant level of disability and significantly decreased endurance level and increased fear avoidance beliefs (both work and physical activity related among bankers with neck pain. In addition to that there was a significant correlation found between NPDI and CCFT, NPDI and FABQ, CCFT and FABQ, FABQ-W and FABQ-PA.

  13. Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

    International Nuclear Information System (INIS)

    Alfieri, G.; Kimoto, T.

    2013-01-01

    We show that Laplace transform deep level transient spectroscopy (LDLTS) is an effective technique for the separation of the overlapping emission rates of the EH 6 and EH 7 levels, which are known to constitute EH 6/7 , a mid-gap level in n-type 4H-SiC. The analysis of the electron irradiation dose, electric field dependence, and the effects of carbon interstitials injection on the emission rates of EH 6 and EH 7 shows that EH 7 is dominant over EH 6 and confirms that their nature is related to a carbon vacancy.

  14. Vitrification treatment options for disposal of greater-than-Class-C low-level waste in a deep geologic repository

    International Nuclear Information System (INIS)

    Fullmer, K.S.; Fish, L.W.; Fischer, D.K.

    1994-11-01

    The Department of Energy (DOE), in keeping with their responsibility under Public Law 99-240, the Low-Level Radioactive Waste Policy Amendments Act of 1985, is investigating several disposal options for greater-than-Class C low-level waste (GTCC LLW), including emplacement in a deep geologic repository. At the present time vitrification, namely borosilicate glass, is the standard waste form assumed for high-level waste accepted into the Civilian Radioactive Waste Management System. This report supports DOE's investigation of the deep geologic disposal option by comparing the vitrification treatments that are able to convert those GTCC LLWs that are inherently migratory into stable waste forms acceptable for disposal in a deep geologic repository. Eight vitrification treatments that utilize glass, glass ceramic, or basalt waste form matrices are identified. Six of these are discussed in detail, stating the advantages and limitations of each relative to their ability to immobilize GTCC LLW. The report concludes that the waste form most likely to provide the best composite of performance characteristics for GTCC process waste is Iron Enriched Basalt 4 (IEB4)

  15. Capacitance transient study of a bistable deep level in e--irradiated n-type 4H-SiC

    International Nuclear Information System (INIS)

    Beyer, F C; Hemmingsson, C G; Pedersen, H; Henry, A; Janzén, E; Isoya, J; Ohshima, T; Morishita, N

    2012-01-01

    Using capacitance transient techniques, a bistable centre, called FB centre here, was observed in electron irradiated 4H-SiC. In configuration A, the deep level known as EH5 (E a = E C - 1.07 eV) is detected in the deep level transient spectroscopy spectrum, whereas for configuration B no obvious deep level is observed in the accessible part of the band gap. Isochronal annealing revealed the transition temperatures to be T A→B > 730 K and for the opposite process T B→A ≈ 710 K. The energy needed to conduct the transformations were determined to be E A (A → B) = (2.1 ± 0.1) eV and E A (B → A) = (2.3 ± 0.1) eV, respectively. The pre-factor indicated an atomic jump process for the opposite transition A → B and a charge carrier-emission dominated process in the case of B → A. Minority charge carrier injection enhanced the transformation from configuration B to configuration A by lowering the transition barrier by about 1.4 eV. Since the bistable FB centre is already present after low-energy electron irradiation (200 keV), it is likely related to carbon.

  16. Considerations affecting deep-well disposal of tritium-bearing low-level aqueous waste from nuclear fuel reprocessing plants

    International Nuclear Information System (INIS)

    Trevorrow, L.E.; Warner, D.L.; Steindler, M.J.

    1977-03-01

    Present concepts of disposal of low-level aqueous wastes (LLAW) that contain much of the fission-product tritium from light water reactors involve dispersal to the atmosphere or to surface streams at fuel reprocessing plants. These concepts have been challenged in recent years. Deep-well injection of low-level aqueous wastes, an alternative to biospheric dispersal, is the subject of this presentation. Many factors must be considered in assessing its feasibility, including technology, costs, environmental impact, legal and regulatory constraints, and siting. Examination of these factors indicates that the technology of deep-well injection, extensively developed for other industrial wastes, would require little innovation before application to low-level aqueous wastes. Costs would be low, of the order of magnitude of 10 -4 mill/kWh. The environmental impact of normal deep-well disposal would be small, compared with dispersal to the atmosphere or to surface streams; abnormal operation would not be expected to produce catastrophic results. Geologically suitable sites are abundant in the U.S., but a well would best be co-located with the fuel-reprocessing plant where the LLAW is produced. Legal and regulatory constraints now being developed will be the most important determinants of the feasibility of applying the method

  17. Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

    Science.gov (United States)

    Dhar, S.; Das, U.; Bhattacharya, P. K.

    1986-01-01

    Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

  18. Dual deep modeling: multi-level modeling with dual potencies and its formalization in F-Logic.

    Science.gov (United States)

    Neumayr, Bernd; Schuetz, Christoph G; Jeusfeld, Manfred A; Schrefl, Michael

    2018-01-01

    An enterprise database contains a global, integrated, and consistent representation of a company's data. Multi-level modeling facilitates the definition and maintenance of such an integrated conceptual data model in a dynamic environment of changing data requirements of diverse applications. Multi-level models transcend the traditional separation of class and object with clabjects as the central modeling primitive, which allows for a more flexible and natural representation of many real-world use cases. In deep instantiation, the number of instantiation levels of a clabject or property is indicated by a single potency. Dual deep modeling (DDM) differentiates between source potency and target potency of a property or association and supports the flexible instantiation and refinement of the property by statements connecting clabjects at different modeling levels. DDM comes with multiple generalization of clabjects, subsetting/specialization of properties, and multi-level cardinality constraints. Examples are presented using a UML-style notation for DDM together with UML class and object diagrams for the representation of two-level user views derived from the multi-level model. Syntax and semantics of DDM are formalized and implemented in F-Logic, supporting the modeler with integrity checks and rich query facilities.

  19. A deep-level transient spectroscopy study of gamma-ray irradiation on the passivation properties of silicon nitride layer on silicon

    Science.gov (United States)

    Dong, Peng; Yu, Xuegong; Ma, Yao; Xie, Meng; Li, Yun; Huang, Chunlai; Li, Mo; Dai, Gang; Zhang, Jian

    2017-08-01

    Plasma-enhanced chemical vapor deposited silicon nitride (SiNx) films are extensively used as passivation material in the solar cell industry. Such SiNx passivation layers are the most sensitive part to gamma-ray irradiation in solar cells. In this work, deep-level transient spectroscopy has been applied to analyse the influence of gamma-ray irradiation on the passivation properties of SiNx layer on silicon. It is shown that the effective carrier lifetime decreases with the irradiation dose. At the same time, the interface state density is significantly increased after irradiation, and its energy distribution is broadened and shifts deeper with respect to the conduction band edge, which makes the interface states becoming more efficient recombination centers for carriers. Besides, C-V characteristics show a progressive negative shift with increasing dose, indicating the generation of effective positive charges in SiNx films. Such positive charges are beneficial for shielding holes from the n-type silicon substrates, i. e. the field-effect passivation. However, based on the reduced carrier lifetime after irradiation, it can be inferred that the irradiation induced interface defects play a dominant role over the trapped positive charges, and therefore lead to the degradation of passivation properties of SiNx on silicon.

  20. Defect phase diagram for doping of Ga2O3

    OpenAIRE

    Stephan Lany

    2018-01-01

    For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO2), and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor) center, and Ge and Sn have d...

  1. Deep brain stimulation of the nucleus basalis of Meynert attenuates early EEG components associated with defective sensory gating in patients with Alzheimer disease - a two-case study.

    Science.gov (United States)

    Dürschmid, Stefan; Reichert, Christoph; Kuhn, Jens; Freund, Hans-Joachim; Hinrichs, Hermann; Heinze, Hans-Jochen

    2017-10-20

    Alzheimer's disease (AD) is associated with deterioration of memory and cognitive function and a degeneration of neurons of the nucleus basalis of Meynert (NBM). The NBM is the major input source of acetylcholine (ACh) to the cortex. The decreasing cholinergic innervation of the cortex due to degeneration of the NBM might be the cause of loss of memory function. NBM-Deep brain stimulation (NBM-DBS) is considered to serve as a potential therapeutic option for patients with AD by supporting residual cholinergic transmission to stabilize oscillatory activity in memory-relevant circuits. However, whether DBS could improve sensory memory functions in patients with AD is not clear. Here, in a passive auditory oddball paradigm, patients with AD (N = 2) listened to repetitive background tones (standard tones) randomly interrupted by frequency deviants in two blocks with NBM-DBS OFF and then NBM-DBS ON, while age-matched healthy controls (N = 6) repeated the experiment twice. The mismatch negativity in NBM-DBS OFF significantly differed from controls in both blocks, but not under NBM-DBS, which was likely due to a pronounced P50 increase overlapping with the N1 in NBM-DBS OFF. This early complex of EEG components recovered under stimulation to a normal level as defined by responses in controls. In this temporal interval, we found in patients with NBM-DBS ON (but not with NBM-DBS OFF) and in controls a strong repetition suppression effect to standard tones - with more attenuated responses to frequently repeated standard tones. This highlights the role of NBM-DBS for sensory gating of familiar auditory information into sensory memory. © 2017 Federation of European Neuroscience Societies and John Wiley & Sons Ltd.

  2. Steady state minority carrier lifetime and defect level occupation in thin film CdTe solar cells

    International Nuclear Information System (INIS)

    Cheng, Zimeng; Delahoy, Alan E.; Su, Zhaoqian; Chin, Ken K.

    2014-01-01

    A model consisting of Shockley Read Hall (SRH) recombination under steady state conditions of constant photon injection is proposed in this work to study the steady state minority carrier lifetime in CdS/CdTe thin film solar cells. The SRH recombination rate versus optical injection level is analytically approximated in the junction and neutral regions. In the neutral region, it is found that the recombination rate through certain defect levels has one constant value under lower optical injection conditions and another constant value under higher optical injection conditions with the transition occurring at a critical optical injection level. By simultaneously solving the equations of charge neutrality, charge conservation and SRH recombination in the neutral region, it is found that the compensation of doping and the reduction of minority carrier lifetime by donors in the p-type semiconductor can each be remedied by optical injection. It is also demonstrated that this optical-dependent SRH recombination is significant in large bandgap thin films. The measured minority carrier diffusion length in a CdS/CdTe solar cells, as determined from the steady-state photo-generated carrier collection efficiency, shows the predicted transition of minority carrier lifetime versus optical injection level. A numerical fitting of the indirectly-measured minority carrier lifetime by assuming the minority carrier mobility gives a non-intuitive picture of the p–n junction with a low free hole concentration but a narrow depletion region width. - Highlights: • Minority carrier lifetimes under different optical injections are solved. • Simplifications of Shockley–Read–Hall recombination equation are discussed. • The compensation of donor can be remedied with optical injection. • The recombination efficiency of donor can be remedied with optical injection. • The minority carrier lifetime transition under illumination was experimentally observed

  3. Production-Level Facial Performance Capture Using Deep Convolutional Neural Networks

    OpenAIRE

    Laine, Samuli; Karras, Tero; Aila, Timo; Herva, Antti; Saito, Shunsuke; Yu, Ronald; Li, Hao; Lehtinen, Jaakko

    2016-01-01

    We present a real-time deep learning framework for video-based facial performance capture -- the dense 3D tracking of an actor's face given a monocular video. Our pipeline begins with accurately capturing a subject using a high-end production facial capture pipeline based on multi-view stereo tracking and artist-enhanced animations. With 5-10 minutes of captured footage, we train a convolutional neural network to produce high-quality output, including self-occluded regions, from a monocular v...

  4. Exploring the Deep-Level Reasoning Questions Effect during Vicarious Learning among Eighth to Eleventh Graders in the Domains of Computer Literacy and Newtonian Physics

    Science.gov (United States)

    Gholson, Barry; Witherspoon, Amy; Morgan, Brent; Brittingham, Joshua K.; Coles, Robert; Graesser, Arthur C.; Sullins, Jeremiah; Craig, Scotty D.

    2009-01-01

    This paper tested the deep-level reasoning questions effect in the domains of computer literacy between eighth and tenth graders and Newtonian physics for ninth and eleventh graders. This effect claims that learning is facilitated when the materials are organized around questions that invite deep-reasoning. The literature indicates that vicarious…

  5. Effectiveness of Acellular Dermal Matrix on Autologous Split-Thickness Skin Graft in Treatment of Deep Tissue Defect: Esthetic Subjective and Objective Evaluation.

    Science.gov (United States)

    Lee, Yoo Jung; Park, Myong Chul; Park, Dong Ha; Hahn, Hyung Min; Kim, Sue Min; Lee, Il Jae

    2017-10-01

    A split-thickness skin graft (STSG) is performed to cover a large full-thickness skin defect. Esthetic and functional deficits can result, and many studies have sought to overcome them. This study compared the effectiveness of the acellular dermal matrix (ADM) graft and STSG concerning esthetic and functional effectiveness of ADM on scar quality. Of the patients who underwent anterolateral thigh free flap from 2011 to 2015, patients who received skin graft only (n = 10) or skin graft with ADM (n = 20) for coverage of the donor site were enrolled. In all cases, autologous STSG was performed with 1:1.5 meshed 0.008-0.010-inch-thick skin. In the skin graft with ADM group, 0.008-0.013-inch-thick meshed ADM (CGderm ® ; CGBio, Inc., Seungnam, Korea) was co-grafted. Negative-pressure wound therapy (CuraVAC ® ; CGBio, Inc., Seungnam, Korea) was applied to both groups in continuous mode at -120 mmHg. We investigate early outcomes (skin loss rate, duration of negative-pressure wound therapy, days to removal of stitches, days to achieve complete healing, and complications) and late outcomes in terms of scar quality (vascularity, pigmentation, pliability and height) and graft-related symptoms (itching sensation and pain). Assessments used the Vancouver Scar Scale and the Patient and Observer Scar Assessment Scale. Skin fold was measured to evaluate the elasticity of scar tissue. In the Vancouver Scar Scale, vascularity subscore (p = 0.003) and total score (p = 0.016) were significantly lower in the skin graft with ADM group. In Patient and Observer Scar Assessment Scale, the pain (p = 0.037) and stiffness subscores (p = 0.002), and total score (p = 0.017) were significantly lower in the skin graft with ADM group. Skin graft with ADM results in better scar quality in objective and subjective aspects. This journal requires that authors assign a level of evidence to each article. For a full description of these Evidence-Based Medicine ratings, please refer to

  6. AlxGa1--xN/GaN band offsets determined by deep-level emission

    International Nuclear Information System (INIS)

    Hang, D. R.; Chen, C. H.; Chen, Y. F.; Jiang, H. X.; Lin, J. Y.

    2001-01-01

    We present studies of the compositional dependence of the optical properties of Al x Ga 1-x N(0 x Ga 1-x N. As aluminum concentration increases, the color of the band changes from yellow (2.2 eV) to blue (2.6 eV). The shift was less than that of the band gap. Together with previously published studies, it implies that the deep acceptor level is pinned to a common reference level to both materials, thus the deep level responsible for the yellow emission is used as a common reference level to determine the band alignment in Al x Ga 1-x N/GaN heterojunctions. Combining with the near-band-edge modulation spectra, the estimated ratio of conduction-to-valence band discontinuity is 65:35. Our results are close to the values obtained from PL measurements on Al 0.14 Ga 0.86 N/GaN quantum wells and those calculated by linear muffin-tin orbital method and linearized augmented plane wave method. copyright 2001 American Institute of Physics

  7. Guidelines for the operation and closure of deep geological repositories for the disposal of high level and alpha bearing wastes

    International Nuclear Information System (INIS)

    1991-10-01

    The operation and closure of a deep geological repository for the disposal of high level and alpha bearing wastes is a long term project involving many disciplines. This unique combination of nuclear operations in a deep underground location will require careful planning by the operating organization. The basic purpose of the operation stage of the deep repository is to ensure the safe disposal of the radioactive wastes. The purpose of the closure stage is to ensure that the wastes are safely isolated from the biosphere, and that the surface region can be returned to normal use. During these two stages of operation and closure, it is essential that both workers and the public are safely protected from radiation hazards, and that workers are protected from the hazards of working underground. For these periods of the repository, it is essential to carry out monitoring for purposes of radiological protection, and to continue testing and investigations to provide data for repository performance confirmation and for final safety assessment. Over the lengthy stages of operation and closure, there will be substantial feedback of experience and generation of site data. These will lead both to improved quality of operation and a better understanding of the site characteristics, thereby enhancing the confidence in the ability of the repository system to isolate the waste and protect future generations. 15 refs

  8. Deep level transient spectroscopic analysis of p/n junction implanted with boron in n-type silicon substrate

    Science.gov (United States)

    Wakimoto, Hiroki; Nakazawa, Haruo; Matsumoto, Takashi; Nabetani, Yoichi

    2018-04-01

    For P-i-N diodes implanted and activated with boron ions into a highly-resistive n-type Si substrate, it is found that there is a large difference in the leakage current between relatively low temperature furnace annealing (FA) and high temperature laser annealing (LA) for activation of the p-layer. Since electron trap levels in the n-type Si substrate is supposed to be affected, we report on Deep Level Transient Spectroscopy (DLTS) measurement results investigating what kinds of trap levels are formed. As a result, three kinds of electron trap levels are confirmed in the region of 1-4 μm from the p-n junction. Each DLTS peak intensity of the LA sample is smaller than that of the FA sample. In particular, with respect to the trap level which is the closest to the silicon band gap center most affecting the reverse leakage current, it was not detected in LA. It is considered that the electron trap levels are decreased due to the thermal energy of LA. On the other hand, four kinds of trap levels are confirmed in the region of 38-44 μm from the p-n junction and the DLTS peak intensities of FA and LA are almost the same, considering that the thermal energy of LA has not reached this area. The large difference between the reverse leakage current of FA and LA is considered to be affected by the deep trap level estimated to be the interstitial boron.

  9. Deep feature representation with stacked sparse auto-encoder and convolutional neural network for hyperspectral imaging-based detection of cucumber defects

    Science.gov (United States)

    It is challenging to achieve rapid and accurate processing of large amounts of hyperspectral image data. This research was aimed to develop a novel classification method by employing deep feature representation with the stacked sparse auto-encoder (SSAE) and the SSAE combined with convolutional neur...

  10. Defects in low temperature electron irradiated InP

    International Nuclear Information System (INIS)

    Suski, J.; Bourgoin, J.

    1984-01-01

    n and p-InP has been irradiated at 25K with 1MeV electrons and the created defects were studied by deep level transient spectroscopy (DLTS) in the range 25K-400K. In n-InP, four traps are directly observed, with low introduction rates except for one. They anneal in three stages, and four new centers of still lower concentration appear after 70 0 C heat treatment. In p-InP, two dominant traps stable up to approx.= 400K with introduction rates close to the theoretical ones, which might be primary defects are found, while another one is clearly a secondary defect likely associated to Zn dopant. At least two of the low concentration irradiation induced electron traps, created between 25K and 100K are also secondary defects, which implies a mobility of some primary defects down to 100K at least. (author)

  11. Determination of deep-level impurities and their effects on the small-single and LF noise properties of ion-implanted GaAs MESFETs

    International Nuclear Information System (INIS)

    Sriram, S.; Kim, B.; Ghosh, P.K.; Das, M.B.; Pennsylvania State Univ., University Park; Pennsylvania State Univ., University Park

    1982-01-01

    A large number of deep levels, with energies ranging from Esub(c)-0.19eV to Esub(c)-0.9eV, have been identified and characterized using ion-implanted MESFET's on undoped and Cr-doped LEC-grown semi-insulating GaAs substrates. Measurement techniques used include deep level transient (DLTS) and steady state spectroscopic (DLSS) methods. Large capture cross-section values are obtained for levels below Esub(c)-0.5eV, possibly due to high electric field. Spectral densities of LF noise with distinct bulges have been shown to be related to deep levels. In some samples, natural deep level related oscillations have been observed and their ionization energies have been determined. (author)

  12. Feasibility of high level radioactive waste disposal in deep sea sediments

    International Nuclear Information System (INIS)

    Buckley, D.E.

    1987-01-01

    For the past ten years, an international program has been conducted to investigate the concept feasibility for disposing of spent nuclear fuel waste in deep ocean sediments. These studies by the Seabed Working Group were coordinated by the Nuclear Energy Agency of the Organization for Economic Cooperation and Development. Penetrators have been considered as the primary method of waste emplacement. This required emphasis on studies of the nature of the plastic sediments which would form the primary barrier to the release of radionuclides into the biosphere. Site qualification guidelines, included criteria for tectonic and sedimentary stability over periods of at least 10 5 years. Using these guidelines two potential areas were identified: one in the Madeira Abyssal Plain; and one in the Southern Nares Abyssal Plain, both in the North Atlantic

  13. Sib-pair analysis detects elevated Lp(a) levels and large variation of Lp(a) concentration in subjects with familial defective ApoB

    NARCIS (Netherlands)

    van der Hoek, Y. Y.; Lingenhel, A.; Kraft, H. G.; Defesche, J. C.; Kastelein, J. J.; Utermann, G.

    1997-01-01

    Whether or not Lp(a) plasma levels are affected by the apoB R3500Q mutation, which causes Familial Defective apoB (FDB), is still a matter of debate. We have analyzed 300 family members of 13 unrelated Dutch index patients for the apoB mutation and the apolipoprotein(a) [apo(a)] genotype. Total

  14. Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability

    Science.gov (United States)

    Belmonte, A.; Degraeve, R.; Fantini, A.; Kim, W.; Houssa, M.; Jurczak, M.; Goux, L.

    2014-06-01

    In this paper, we develop a Quantum-Point-Contact (QPC) model describing the state conduction in a W/Al2O3/TiW/Cu Conductive-Bridging Memory cell (CBRAM). The model allows describing both the voltage- and the temperature-dependence of the conduction. For deep current levels, a resistance component is added in series to the point-contact constriction to account for electron scattering in the residual filament. The fitting of single-particle perturbation also allowed to estimate the number and effective size of the conduction-controlling particles in the QPC constriction. The results clearly point to smaller particles for CBRAM (Cu particles) as compared to oxide-based resistive RAM involving oxygen-vacancy defects, which is discussed as a possible origin of deeper reset level obtained in CBRAM. We also evidence a beneficial impact of this smaller particle size on lower Random-Telegraph-Noise amplitude measured on CBRAM devices.

  15. Inversion of Qubit Energy Levels in Qubit-Oscillator Circuits in the Deep-Strong-Coupling Regime

    Science.gov (United States)

    Yoshihara, F.; Fuse, T.; Ao, Z.; Ashhab, S.; Kakuyanagi, K.; Saito, S.; Aoki, T.; Koshino, K.; Semba, K.

    2018-05-01

    We report on experimentally measured light shifts of superconducting flux qubits deep-strongly coupled to L C oscillators, where the coupling constants are comparable to the qubit and oscillator resonance frequencies. By using two-tone spectroscopy, the energies of the six lowest levels of each circuit are determined. We find huge Lamb shifts that exceed 90% of the bare qubit frequencies and inversions of the qubits' ground and excited states when there are a finite number of photons in the oscillator. Our experimental results agree with theoretical predictions based on the quantum Rabi model.

  16. Study on deep levels in near-surface region of Hgsub(1-x)Cdsub(x)Te semiconductor

    International Nuclear Information System (INIS)

    Antonov, V.V.; Vojtsekhovskij, A.V.; Kazak, E.P.; Lanskaya, O.G.; Pakhorukov, V.A.

    1983-01-01

    Experimental investigation into MOS-structures on the basis of narrow-band n-Hgsub(1-x)Cdsub(X)Te semiconductor was conducted. Anode-oxide film, grown in 0.1N KOH solution in ethylenglycol was used as dielectric laer, olt-farad characteristics of the MOS- structures, measured, at different frequencies of test voltage, testify to the presence of deep monoenergetic levels (Esub(t)) in near surface region of semicondUctor located within the limits of the energy gap of Hgsub(1-x)Cdsub(x)Te. Two types of levels are observed in the n-Hgsub(1-x)Cdsub(x)Te-base MOS-structures at x approximately equal to 0.21: Isub(t)=0.105-0.096 eV and Esub(t)=0.045-0.042 eV (with respect to the valent zone ceiling). The frequency dependence of the equivalent parallel conductivity of the Hgsub(1-x)Cdsub(x)Te-base MOS-structure different voltages on a field electrode was used to show, that the observed deep level has the bulk nature. Results of numeral estimations of the state densities on the impurity center and of capture cross-section of a positive charge (deltasub(p)=6.7x10 -17 -1.4x10 -16 )sm 2 ) are given

  17. Defect production in ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Zinkle, S.J. [Oak Ridge National Lab., TN (United States); Kinoshita, C. [Kyushu Univ. (Japan)

    1997-08-01

    A review is given of several important defect production and accumulation parameters for irradiated ceramics. Materials covered in this review include alumina, magnesia, spinel silicon carbide, silicon nitride, aluminum nitride and diamond. Whereas threshold displacement energies for many ceramics are known within a reasonable level of uncertainty (with notable exceptions being AIN and Si{sub 3}N{sub 4}), relatively little information exists on the equally important parameters of surviving defect fraction (defect production efficiency) and point defect migration energies for most ceramics. Very little fundamental displacement damage information is available for nitride ceramics. The role of subthreshold irradiation on defect migration and microstructural evolution is also briefly discussed.

  18. An investigation of the role of defect levels on the radiation response of synthetic diamond crystals when used as sensors for the detection of mammography X-rays.

    Science.gov (United States)

    Ade, Nicholas

    2017-09-01

    This study evaluates the role of defects on the performances of synthetic diamond sensors on exposure to mammography X-rays. Through systematic investigations, the main cause of instability of response of examined sensors necessitating pre-irradiation was isolated and ascribed to the presence of ambient light which has the effect of emptying shallow trapping levels. The changes in response between measurements in light and dark conditions varied from 2.8 ± 1.2% to 63.0 ± 0.3%. Sensitivities between 0.4 and 6.7nCGy -1 mm -3 determined for the sensors varied with defect levels. The study indicates that differences in crystal quality due to the presence and influence of defects would cause a discrepancy in the dosimetric performances of various diamond detectors. Once a sensor plate is selected (based on the influence of defect levels) and coupled to the probe housing with the response of the diamond sensor stabilised and appropriately shielded from ambient light, daily priming is not needed. Copyright © 2017 Elsevier Ltd. All rights reserved.

  19. Strategic production modeling for defective items with imperfect inspection process, rework, and sales return under two-level trade credit

    Directory of Open Access Journals (Sweden)

    Aditi Khanna

    2017-01-01

    Full Text Available Quality decisions are one of the major decisions in inventory management. It affects customer’s demand, loyalty and customer satisfaction and also inventory costs. Every manufacturing process is inherent to have some chance causes of variation which may lead to some defectives in the lot. So, in order to cater the customers with faultless products, an inspection process is inevitable, which may also be prone to errors. Thus for an operations manager, maintaining the quality of the lot and the screening process becomes a challenging task, when his objective is to determine the optimal order quantity for the inventory system. Besides these operational tasks, the goal is also to increase the customer base which eventually leads to higher profits. So, as a promotional tool, trade credit is being offered by both the retailer and supplier to their respective customers to encourage more frequent and higher volume purchases. Thus taking into account of these facts, a strategic production model is formulated here to study the combined effects of imperfect quality items, faulty inspection process, rework process, sales return under two level trade credit. The present study is a general framework for many articles and classical EPQ model. An analytical method is employed which jointly optimizes the retailer’s credit period and order quantity, so as to maximize the expected total profit per unit time. To study the behavior and application of the model, a numerical example has been cited and a comprehensive sensitivity analysis has been performed. The model can be widely applicable in manufacturing industries like textile, footwear, plastics, electronics, furniture etc.

  20. Birth Defects

    Science.gov (United States)

    A birth defect is a problem that happens while a baby is developing in the mother's body. Most birth defects happen during the first 3 months of ... in the United States is born with a birth defect. A birth defect may affect how the ...

  1. Mapping vaccinia virus DNA replication origins at nucleotide level by deep sequencing.

    Science.gov (United States)

    Senkevich, Tatiana G; Bruno, Daniel; Martens, Craig; Porcella, Stephen F; Wolf, Yuri I; Moss, Bernard

    2015-09-01

    Poxviruses reproduce in the host cytoplasm and encode most or all of the enzymes and factors needed for expression and synthesis of their double-stranded DNA genomes. Nevertheless, the mode of poxvirus DNA replication and the nature and location of the replication origins remain unknown. A current but unsubstantiated model posits only leading strand synthesis starting at a nick near one covalently closed end of the genome and continuing around the other end to generate a concatemer that is subsequently resolved into unit genomes. The existence of specific origins has been questioned because any plasmid can replicate in cells infected by vaccinia virus (VACV), the prototype poxvirus. We applied directional deep sequencing of short single-stranded DNA fragments enriched for RNA-primed nascent strands isolated from the cytoplasm of VACV-infected cells to pinpoint replication origins. The origins were identified as the switching points of the fragment directions, which correspond to the transition from continuous to discontinuous DNA synthesis. Origins containing a prominent initiation point mapped to a sequence within the hairpin loop at one end of the VACV genome and to the same sequence within the concatemeric junction of replication intermediates. These findings support a model for poxvirus genome replication that involves leading and lagging strand synthesis and is consistent with the requirements for primase and ligase activities as well as earlier electron microscopic and biochemical studies implicating a replication origin at the end of the VACV genome.

  2. Feasibility of high level radioactive waste disposal in deep sea sediments

    International Nuclear Information System (INIS)

    Buckley, D.E.

    1987-01-01

    For the past ten years, an international program has been conducted to investigate the concept feasibility for disposing of spent nuclear fuel waste in deep ocean sediments. These studies by the Seabed Working Group were coordinated by the Nuclear Energy Agency of the Organization for Economic Cooperation and Development. Penetrators have been considered as the primary method of waste emplacement. This required emphasis on studies of the nature of the plastic sediments which would form the primary barrier to the release of radionuclides into the biosphere. Site qualification guidelines, included criteria for tectonic and sedimentary stability over periods of at least 10 5 years. Using these guidelines two potential areas were identified: one in the Madeira Abyssal Plain; and one in the Southern Nares Abyssal Plain, both in the North Atlantic. The sediment barrier properties are quite different in terms of dominant mineralogy (carbonates in MAP, and silicous clays in SNAP). The MAP is dominated by thick wide-spread turbidites, but SNAP is dominated by thin discontinuous turbidites

  3. Decomposition of groundwater level fluctuations using transfer modelling in an area with shallow to deep unsaturated zones

    Science.gov (United States)

    Gehrels, J. C.; van Geer, F. C.; de Vries, J. J.

    1994-05-01

    Time series analysis of the fluctuations in shallow groundwater levels in the Netherlands lowlands have revealed a large-scale decline in head during recent decades as a result of an increase in land drainage and groundwater withdrawal. The situation is more ambiguous in large groundwater bodies located in the eastern part of the country, where the unsaturated zone increases from near zero along the edges to about 40 m in the centre of the area. As depth of the unsaturated zone increases, groundwater level reacts with an increasing delay to fluctuations in climate and influences of human activities. The aim of the present paper is to model groundwater level fluctuations in these areas using a linear stochastic transfer function model, relating groundwater levels to estimated precipitation excess, and to separate artificial components from the natural groundwater regime. In this way, the impact of groundwater withdrawal and the reclamation of a 1000 km 2 polder area on the groundwater levels in the adjoining higher ground could be assessed. It became evident that the linearity assumption of the transfer functions becomes a serious drawback in areas with the deepest groundwater levels, because of non-linear processes in the deep unsaturated zone and the non-synchronous arrival of recharge in the saturated zone. Comparison of the results from modelling the influence of reclamation with an analytical solution showed that the lowering of groundwater level is partly compensated by reduced discharge and therefore is less than expected.

  4. EXPERIMENTAL REPAIR OF DEEP CORNEAL DEFECTS USING A BIO-CONSTRUCT COMPRISING A COLLAGEN TYPE I MATRIX LOADED WITH BUCCAL EPITHELIAL CELLS

    Directory of Open Access Journals (Sweden)

    N. S. Egorova

    2017-01-01

    Full Text Available The  research  objective was  to study the  reparative effects of  the  collagen  type  I bio-construct loaded  with buccal epithelial cells, on the rabbit cornea after experimental keratectomy at various stages of treatment (on the 3rd, 7th, 14th, 3 0th days.Material  and methods.  The  experiments were  conducted on 20 rabbits  of  the  Chinchilla breed that  were  operated on cornea of both eyes aiming to inflict epithelial and stromal cornea defects. The collagen-based bio-construct bearing buccal epithelial cells was placed  over the cornea of the experimental eyes. The  cornea of the control  eyes was covered with smooth contact lens. After the surgery, a temporal blepharorrhaphy was performed and kept for 3 days. We studied macroand microscopic pattern of corneal regeneration at 3, 7, 14, and 30 days of experiment.Results. When  using the collaged-based bio-construct containing buccal epithelial cells, the complete epithelialization of the corneal defect occurred at mean 7 days earlier compared to that in the control eyes. Thus, the offered bio-construct stimulated the cell migration and proliferation at early stages of treatment (3–7 days reducing the inflammation activity.Conclusion. The bio-construct comprising a collagen type  I matrix loaded with buccal epithelial cells can provide an effective treatment option for corneal defects.

  5. Deep levels in SiC:V by high temperature transport measurements

    Energy Technology Data Exchange (ETDEWEB)

    Mitchel, W.C.; Perrin, R.; Goldstein, J.; Roth, M.; Ahoujja, M.; Smith, S.R.; Solomon, J.S.; Landis, G.; Jenny, J. [Air Force Materials Lab., Wright-Patterson AFB, OH (United States). Research and Technology Div.; Evwaraye, A.O. [Univ. of Dayton, Dayton, OH (United States); Hobgood, H.McD.; Augustine, G.; Balakrishna, V. [Northrop Grumman Corp., Science and Technology Center, Pittsburgh, PA (United States)

    1998-06-01

    Vanadium doped 6H and 4H SiC have been studied with high temperature Hall effect and resistivity, optical absorption and SIMS. The 6H samples were found to exhibit three thermal activation energies, 0.35 eV, 0.7 eV and near mid-gap. The 0.3 eV level is due to thermal ionization of residual uncompensated boron. We attribute the mid-gap level to thermal ionization of the vanadium donor level. The 0.7 eV activation is believed to be due to transfer of electrons from the ionized vanadium acceptor levels to the conduction band. These results suggest that the vanadium donor and acceptor levels are located at E{sub c}-1.42 eV and E{sub V} + 2.4 eV respectively. (orig.) 7 refs.

  6. Basic reasons and the practice of using deep water-bearing levels for liquid radioactive waste disposal

    International Nuclear Information System (INIS)

    Spitsyn, V.I.; Pimenov, M.K.; Balukova, V.D.; Leontichuk, A.S.; Kokorin, I.N.; Yudin, F.P.; Rakov, N.A.

    1978-01-01

    Speculations are presented on the development and organization of liquid radioactive waste underground disposal in deep water-bearing levels completely isolated from other levels and the surface. Major requirements are formulated that are laid down to low-, moderate-and high-radioactive wastes subject to the disposal. Geological and hydrological conditions as well as the scheme and design features of pilot field facilities are described, where works on high-active waste disposal were started in 1972. In 1972 and 1973 450 and 1050 m 3 of the wastes (7.5 and 53 MCi) respecrespectively were disposed. The first results of the pilot disposal and the 3-year surveillance over the plate-collector condition and the performance of the facilities have reaffirmed the feasibility, medical and radiation safety and economic attractiveness of the disposal of wastes with up to 10-25 Ci/l specific activity

  7. Deep uncertainty and broad heterogeneity in country-level social cost of carbon

    Science.gov (United States)

    Ricke, K.; Drouet, L.; Caldeira, K.; Tavoni, M.

    2017-12-01

    The social cost of carbon (SCC) is a commonly employed metric of the expected economic damages expected from carbon dioxide (CO2) emissions. Recent estimates of SCC range from approximately 10/tonne of CO2 to as much as 1000/tCO2, but these have been computed at the global level. While useful in an optimal policy context, a world-level approach obscures the heterogeneous geography of climate damages and vast differences in country-level contributions to global SCC, as well as climate and socio-economic uncertainties, which are much larger at the regional level. For the first time, we estimate country-level contributions to SCC using recent climate and carbon-cycle model projections, empirical climate-driven economic damage estimations, and information from the Shared Socio-economic Pathways. Central specifications show high global SCC values (median: 417 /tCO2, 66% confidence intervals: 168 - 793 /tCO2) with country-level contributions ranging from -11 (-8 - -14) /tCO2 to 86 (50 - 158) /tCO2. We quantify climate-, scenario- and economic damage- driven uncertainties associated with the calculated values of SCC. We find that while the magnitude of country-level social cost of carbon is highly uncertain, the relative positioning among countries is consistent. Countries incurring large fractions of the global cost include India, China, and the United States. The share of SCC distributed among countries is robust, indicating climate change winners and losers from a geopolitical perspective.

  8. Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure

    International Nuclear Information System (INIS)

    Zhu Qing; Ma Xiao-Hua; Chen Wei-Wei; Hou Bin; Zhu Jie-Jie; Zhang Meng; Chen Li-Xiang; Cao Yan-Rong; Hao Yue

    2016-01-01

    Deep level transient spectroscopy (DLTS) as a method to investigate deep traps in AlGaN/GaN heterostructure or high electron mobility transistors (HEMTs) has been widely utilized. The DLTS measurements under different bias conditions are carried out in this paper. Two hole-like traps with active energies of E v + 0.47 eV, and E v + 0.10 eV are observed, which are related to surface states. The electron traps with active energies of E c − 0.56 eV are located in the channel, those with E c − 0.33 eV and E c − 0.88 eV are located in the AlGaN layer. The presence of surface states has a strong influence on the detection of electron traps, especially when the electron traps are low in density. The DLTS signal peak height of the electron trap is reduced and even disappears due to the presence of plentiful surface state. (paper)

  9. Deep-level transient spectroscopy on an amorphous InGaZnO{sub 4} Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Chasin, Adrian, E-mail: adrian.chasin@imec.be; Bhoolokam, Ajay; Nag, Manoj; Genoe, Jan; Heremans, Paul [imec, Kapeldreef 75, 3001 Leuven (Belgium); ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven (Belgium); Simoen, Eddy [imec, Kapeldreef 75, 3001 Leuven (Belgium); Department of Solid State Sciences, Ghent University, Krijgslaan 281-S1, 9000 Gent (Belgium); Gielen, Georges [ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven (Belgium)

    2014-02-24

    The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier electrode and with a molybdenum (Mo) Ohmic contact at the top. The DLTS technique allows to independently measure the energy and spatial distribution of subgap states in the IGZO thin film. The subgap trap concentration has a double exponential distribution as a function energy, with a value of ∼10{sup 19} cm{sup −3} eV{sup −1} at the conduction band edge and a value of ∼10{sup 17} cm{sup −3} eV{sup −1} at an energy of 0.55 eV below the conduction band. Such spectral distribution, however, is not uniform through the semiconductor film. The spatial distribution of subgap states correlates well with the background doping density distribution in the semiconductor, which increases towards the Ohmic Mo contact, suggesting that these two properties share the same physical origin.

  10. A study of the electrical properties of defects in silicon

    International Nuclear Information System (INIS)

    Blood, A.M.

    1998-01-01

    This work contains the most comprehensive qualitative and quantitative electron beam induced current (EBIC) study of recombination at contaminated defects in silicon. It is also a rigorous quantitative investigation of the effect of hydrogen on individual transition metal contaminated defects. In addition, the recombination behaviour exhibited by point and extended defects has been investigated using EBIC and deep level transient spectroscopy (DLTS). As a result of these measurements, techniques for the preparation of transition metal contaminated specimens have been refined. Successful hydrogen passivation of copper, nickel and iron contaminated silicon specimens containing oxidation-induced stacking faults has been achieved in two experimental systems. It is found that hydrogen passivates those states that are deepest in the semiconductor band gap in preference to those that are shallow. Furthermore, it has been concluded that during hydrogen passivation treatment, even at low temperatures, unwanted metallic impurities can be introduced. Three types of recombination behaviour have been identified from the defects-studied in this work and they are discussed with relevance to present recombination models. An investigation of the recombination behaviour of defects that lie in the depletion region and in the specimen bulk has concluded that the recombination type observed is independent of the depth of the defect. Evidence for the presence of compound defects showing mixed recombination behaviour type is presented. In conclusion, it is postulated that the transition metal impurities introduce a 'band of states' with a range of energies rather than a single energy state. This proposal is provided as an explanation for the recombination types found in this work and the effect of the hydrogen passivation. This work is placed in context of previous investigations into the behaviour of dislocations in silicon in the presence of transition metals, and the ability of

  11. Development of Human-level Decision Making Algorithm for NPPs through Deep Neural Networks : Conceptual Approach

    International Nuclear Information System (INIS)

    Kim, Seung Geun; Seong, Poong Hyun

    2017-01-01

    Development of operation support systems and automation systems are closely related to machine learning field. However, since it is hard to achieve human-level delicacy and flexibility for complex tasks with conventional machine learning technologies, only operation support systems with simple purposes were developed and high-level automation related studies were not actively conducted. As one of the efforts for reducing human error in NPPs and technical advance toward automation, the ultimate goal of this research is to develop human-level decision making algorithm for NPPs during emergency situations. The concepts of SL, RL, policy network, value network, and MCTS, which were applied to decision making algorithm for other fields are introduced and combined with nuclear field specifications. Since the research is currently at the conceptual stage, more research is warranted.

  12. Deep layer-resolved core-level shifts in the beryllium surface

    DEFF Research Database (Denmark)

    Aldén, Magnus; Skriver, Hans Lomholt; Johansson, Börje

    1993-01-01

    Core-level energy shifts for the beryllium surface region are calculated by means of a Green’s function technique within the tight-binding linear muffin-tin orbitals method. Both initial- and final-state effects in the core-ionization process are fully accounted for. Anomalously large energy shifts...

  13. China's deep geological disposal program for high level radioactive waste, background and status 1998

    International Nuclear Information System (INIS)

    Ju Wang; Xu Guoqing; Guo Yonghai

    2001-01-01

    This paper presents the background and progress made in the study of China's high level radioactive waste, including site screening, site evaluation, the study on radionuclide migration, bentonite, natural analogue studies, and performance assessment, etc. The study on Beishan area, the potential area for China's geological repository, is also presented in this paper. (author)

  14. The application of the csamt method in the tectonic transformation of the deep-level fore exploration in the shandongkeng area in Nanxiong basin

    International Nuclear Information System (INIS)

    Xu Zhan

    2010-01-01

    With the national policy efforts on the strengthening of mining exploration, uranium exploration has also ushered in its second s pring . The topic of the new round exploration is P rospect the deeply minerals . Therefore, the changes of the deep structure of the mining area are the premise to carry out survey work. This article states briefly the working principle and characteristics of CSAMT method. The Application of the CSAMT Method in the Tectonic Transformation of The Deep-Level Exploration in the Shangdongkeng area in Nanxiong basin expresses that the method has a good application and effectiveness in research of deep geological objectives. It provides design basis for the mining exploration of deep-level area. (authors)

  15. The case for deep-sea disposal of low-level solid radioactive wastes

    International Nuclear Information System (INIS)

    Lewis, J.B.

    1983-01-01

    The scientific justification for the sea disposal of low-level solid radioactive wastes is summarized and the relevant national and international codes of practice and legislation are outlined. It is concluded that, since the amount of radioactivity disposed of in the oceans is very small compared with the natural radioactivity, the environmental hazard is small and sea dumping could be increased. (U.K.)

  16. Disposal of high level and long lived radioactive waste in deep geological formation

    International Nuclear Information System (INIS)

    Niezborala, J.M.; Hoorelbeke, J.M.

    2000-01-01

    The status of ANDRA's research program on high level and long lived waste corresponds to the start of construction of the Meuse/Haute-Marne Underground Research Laboratory in an argillite layer, as well as to the selection in 1999 of preliminary disposal concepts corresponding to this layer. The paper describes the preliminary concepts dealing with transuranic waste, high level vitrified waste and potentially disposed spent fuel. Provision is made for a high level of flexibility, in particular with regard to options of reversibility of the disposal process, and to potential evolutions of the waste inventory. These concepts were selected for research purpose to assess by the year 2006 the feasibility of a potential repository, with.respect in particular to safety rules. The paper mentions the research targets of the program aiming at answering major scientific and technological questions raised by the concepts. The program includes the fitting and validation of the modelling, on the basis in particular of the experimental work to be carried out in the Underground Research Laboratory, making it possible to dimension the disposal concepts and to assess their safety. (authors)

  17. A preliminary study on the geochemical environment for deep geological disposal of high level radioactive waste in Korea

    International Nuclear Information System (INIS)

    Kim, Chun Soo; Bae, Dae Seok; Kim, Kyung Su; Koh, Yong Kwon; Park, Byoung Yun

    2000-03-01

    Geochemical study on the groundwater from crystalline rocks (granite and gneiss) for the deep geological disposal of high-level radioactive waste was carried out in order to elucidate the hydrogeochemical and isotope characteristics and geochemical evolution of the groundwater. Study areas are Jungwon, Chojeong, Youngcheon and Yusung for granite region, Cheongyang for gneiss region, and Yeosu for volcanic region. Groundwaters of each study areas weree sampled and analysed systematically. Groundwaters can be grouped by their chemistry and host rock. Origin of the groundwater was proposed by isotope ( 18 O, 2 H, 13 C, 34 S, 87 Sr, 15 N) studies and the age of groundwater was inferred from their tritium contents. Based ont the geochemical and isotope characteristics, the geochemical evolutions of each types of groundwater were simulated using SOLVEQ/CHILLER and PHREEQC programs

  18. Decommissioning of surface facilities associated with repositories for the deep geological disposal of high-level nuclear wastes

    International Nuclear Information System (INIS)

    Heckman, R.A.

    1978-11-01

    A methodology is presented in this paper to evaluate the decommissioning of the surface facilities associated with repositories for the deep geological disposal of high-level nuclear wastes. A cost/risk index (figure of merit), expressed as $/manrem, is proposed as an evaluation criteria. On the basis of this cost/risk index, we gain insight into the advisability of adapting certain decontamination design options into the original facility. Three modes are considered: protective storage, entombment, and dismantlement. Cost estimates are made for the direct labor involved in each of the alternative modes for a baseline design case. Similarly, occupational radiation exposures are estimated, with a larger degree of uncertainty, for each of the modes. Combination of these estimates produces the cost/risk index. To illustrate the methodology, an example using a preliminary baseline repository design is discussed

  19. Predicted peak temperature-rises around a high-level radioactive waste canister emplaced in the deep ocean bed

    International Nuclear Information System (INIS)

    Kipp, K.L.

    1978-06-01

    A simple mathematical model of heat conduction was used to evaluate the peak temperature-rise along the wall of a canister of high-level radioactive waste buried in deep ocean sediment. Three different amounts of vitrified waste, corresponding to standard Harvest, large Harvest, and AVM canisters, and three different waste loadings were studied. Peak temperature-rise was computed for the nine cases as a function of canister geometry and storage time between reprocessing and burial. Lower waste loadings or longer storage times than initially envisaged are necessary to prevent the peak temperature-rise from exceeding 200 0 C. The use of longer, thinner cylinders only modestly reduces the storage time for a given peak temperature. Effects of stacking of waste canisters and of close-packing were also studied. (author)

  20. A preliminary study on the geochemical environment for deep geological disposal of high level radioactive waste in Korea

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chun Soo; Bae, Dae Seok; Kim, Kyung Su; Koh, Yong Kwon; Park, Byoung Yun

    2000-03-01

    Geochemical study on the groundwater from crystalline rocks (granite and gneiss) for the deep geological disposal of high-level radioactive waste was carried out in order to elucidate the hydrogeochemical and isotope characteristics and geochemical evolution of the groundwater. Study areas are Jungwon, Chojeong, Youngcheon and Yusung for granite region, Cheongyang for gneiss region, and Yeosu for volcanic region. Groundwaters of each study areas weree sampled and analysed systematically. Groundwaters can be grouped by their chemistry and host rock. Origin of the groundwater was proposed by isotope ({sup 18}O, {sup 2}H, {sup 13}C, {sup 34}S, {sup 87}Sr, {sup 15}N) studies and the age of groundwater was inferred from their tritium contents. Based ont the geochemical and isotope characteristics, the geochemical evolutions of each types of groundwater were simulated using SOLVEQ/CHILLER and PHREEQC programs.

  1. Containers and overpacks for high-level radioactive waste in deep geological disposal. Conditions: French Corrosion Programme

    International Nuclear Information System (INIS)

    Crusset, D.; Plas, F.; Santarini, G.

    2003-01-01

    Within the framework of the act of French law dated 31 December, 1991, ANDRA (National Radioactive Waste Management Agency) is responsible for conducting the feasibility study on disposal of reversible and irreversible high-level or long-life radioactive waste in deep geological formations. Consequently, ANDRA is carrying out research on corrosion of the metallic materials envisaged for the possible construction of overpacks for vitrified waste packages or containers for spent nuclear fuel. Low-alloy or unalloyed steels and the passive alloys (Fe-Ni-Cr-Mo) constitute the two families of materials studied and ANDRA has set up a research programme in partnership with other research organisations. The 'broad outlines' of the programme, which includes experimental and modelling operations, are presented. (authors)

  2. A preliminary study on the regional fracture systems for deep geological disposal of high level radioactive waste in Korea

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chun Soo; Bae, Dae Seok; Kim, Kyung Su; Koh, Young Kown; Park, Byoung Yoon [Korea Atomic Energy Research Institute, Taejeon (Korea)

    2000-03-01

    For the deep geological disposal of high-level radioactive waste, it is essential to characterize the fracture system in rock mass which has a potential pathways of nuclide. Currently, none of research results are in classification and detailed properties for the fracture system in Korea. This study aims to classify and describe the regional fracture system in lithological and geotectonical point of view using literature review, shaded relief map, and aeromagnetic survey data. This report contains the following: - Theoretical review of the fracture development mechanism. - Overall fault and fracture map. - Geological description on the distributional characteristics of faults and fractures(zone) in terms of lithological domain and tectonical province. 122 refs., 22 figs., 4 tabs. (Author)

  3. Interactive Sea Level Rise App & Online Viewer Offers Deep Dive Into Climate

    Science.gov (United States)

    Turrin, M.; Porter, D. F.; Ryan, W. B. F.; Pfirman, S. L.

    2015-12-01

    Climate has captured the attention of the public but its complexity can cause interested individuals to turn to opinion pieces, news articles or blogs for information. These platforms often oversimplify or present heavily interpreted or personalized perspectives. Data interactives are an extremely effective way to explore complex geoscience topics like climate, opening windows of understanding for the user that have previously been closed. Layering data onto maps through programs like GeoMapApp and the Earth Observer App has allowed users to dig directly into science data, but with only limited scaffolding. The interactive 'Polar Explorer: Sea Level Explorer App' provides a richly layered introduction to a range of topics connected to sea level rise. Each map is supported with a pop up and a short audio file of supplementary material, and an information page that includes the data source and links for further reading. This type of learning platform works well for both the formal and informal learning environment. Through science data displayed as map visualizations the user is invited into topics through an introductory question, such as "Why does sea level change?" After clicking on that question the user moves to a second layer of questions exploring the role of the ocean, the atmosphere, the contribution from the world's glaciers, world's ice sheets and other less obvious considerations such as the role of post-glacial rebound, or the mining of groundwater. Each question ends in a data map, or series of maps, that offer opportunities to interact with the topic. Under the role of the ocean 'Internal Ocean Temperature' offers the user a chance to touch to see temperature values spatially over the world's ocean, or to click through a data series starting at the ocean surface and diving to 5000 meters of depth showing how temperature changes with depth. Other sections, like the role of deglaciation of North America, allow the user to click and see change through

  4. Electrical Characterisation of electron beam exposure induced Defects in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Danga, Helga T., E-mail: helga.danga@up.ac.za; Auret, Francois D.; Coelho, Sergio M.M.; Diale, Mmantsae

    2016-01-01

    The defects introduced in epitaxially grown p-type silicon (Si) during electron beam exposure were electrically characterised using deep level transient spectroscopy (DLTS) and high resolution Laplace-DLTS. In this process, Si samples were first exposed to the conditions of electron beam deposition (EBD) without metal deposition. This is called electron beam exposure (EBE) herein. After 50 minutes of EBE, nickel (Ni) Schottky contacts were fabricated using the resistive deposition method. The defect level observed using the Ni contacts had an activation energy of H(0.55). This defect has an activation energy similar to that of the I-defect. The defect level is similar to that of the HB4, a boron related defect. DLTS depth profiling revealed that H(0.55) could be detected up to a depth of 0.8 μm below the junction. We found that exposing the samples to EBD conditions without metal deposition introduced a defect which was not introduced by the EBD method. We also observed that the damage caused by EBE extended deeper into the material compared to that caused by EBD.

  5. Role of waste packages in the safety of a high level waste repository in a deep geological formation

    International Nuclear Information System (INIS)

    Bretheau, F.; Lewi, J.

    1990-06-01

    The safety of a radioactive waste disposal facility lays on the three following barriers placed between the radioactive materials and the biosphere: the waste package; the engineered barriers; the geological barrier. The function assigned to each of these barriers in the performance assessment is an option taken by the organization responsible for waste disposal management (ANDRA in France), which must show that: expected performances of each barrier (confinement ability, life-time, etc.) are at least equal to those required to fulfill the assigned function; radiation protection requirements are met in all situations considered as credible, whether they be the normal situation or random event situations. The French waste management strategy is based upon two types of disposal depending on the nature and activity of waste packages: - surface disposal intended for low and medium level wastes having half-lives of about 30 years or less and alpha activity less than 3.7 MBq/kg (0.1 Ci/t), for individual packages and less than 0.37 MBq/kg (0.01 Ci/t) in the average. Deep geological disposal intended for TRU and high level wastes. The conditions of acceptance of packages in a surface disposal site are subject to the two fundamental safety rules no. I.2 and III.2.e. The present paper is only dealing with deep geological disposal. For deep geological repositories, three stages are involved: stage preceding definitive disposal (intermediate storage, transportation, handling, setting up in the disposal cavities); stage subsequent to definitive sealing of the disposal cavities but prior to the end of operation of the repository; stage subsequent to closure of the repository. The role of the geological barrier has been determined as the essential part of long term radioactivity confinement, by a working group, set up by the French safety authorities. Essential technical criteria relating to the choice of a site so defined by this group, are the following: very low permeability

  6. Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

    Science.gov (United States)

    Weinberg, I.; Mehta, S.; Swartz, C. K.

    1984-01-01

    Boron doped silicon n+p solar cells were counterdoped with lithium by ion implantation and the resuitant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacanies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

  7. Ecological risk assessment of deep geological disposal of high-level nuclear waste

    International Nuclear Information System (INIS)

    Hart, D.R.; Lush, D.L.; Acton, D.W.

    1993-01-01

    Contaminant fate and transport models, radiological dosimetry models, chemical dose-response models and population dynamic models were used to estimate ecological risks to moose and brook trout populations arising from a proposed high-level nuclear waste repository. Risks from potential contaminant releases were compared with risks from physical habitat alteration in constructing a repository and service community, and with risks from increased hunting and fish pressure in the area. For a reference environment typical of a proposed location somewhere in the Canadian Shield, preliminary results suggest that the population consequences of contaminant release will be minor relative to those of habitat alteration and natural resource use

  8. Site selection and characterization processes for deep geologic disposal of high level nuclear waste

    International Nuclear Information System (INIS)

    Costin, L.S.

    1997-10-01

    In this paper, the major elements of the site selection and characterization processes used in the US high level waste program are discussed. While much of the evolution of the site selection and characterization processes have been driven by the unique nature of the US program, these processes, which are well defined and documented, could be used as an initial basis for developing site screening, selection, and characterization programs in other countries. Thus, this paper focuses more on the process elements than the specific details of the US program

  9. Site selection and characterization processes for deep geologic disposal of high level nuclear waste

    International Nuclear Information System (INIS)

    Costin, L.S.

    1997-01-01

    In this paper, the major elements of the site selection and characterization processes used in the U. S. high level waste program are discussed. While much of the evolution of the site selection and characterization processes have been driven by the unique nature of the U. S. program, these processes, which are well-defined and documented, could be used as an initial basis for developing site screening, selection, and characterization programs in other countries. Thus, this paper focuses more on the process elements than the specific details of the U. S. program. (author). 3 refs., 2 tabs., 5 figs

  10. Determination of deep levels in semi-insulating cadmium telluride by thermally stimulated current measurements

    International Nuclear Information System (INIS)

    Scharager, C.; Muller, J.C.; Stuck, R.; Siffert, P.

    1975-01-01

    Thermally stimulated current (TSC) measurements have been performed in high resistivity (rho approximately 10 7 ohms.cm) CdTe γ-ray detectors between 35 and 300K. The TSC curves have been analyzed by different methods, including those taking into account the retrapping of the carriers. The trap characteristics have been determined; especially three levels located at E(v)+0.13eV, E(v)+0.30eV and E(c)-0.55eV have been investigated [fr

  11. Site selection and characterization processes for deep geologic disposal of high level nuclear waste

    Energy Technology Data Exchange (ETDEWEB)

    Costin, L.S. [Sandia National Labs., Albuquerque, NM (United States)

    1997-12-31

    In this paper, the major elements of the site selection and characterization processes used in the U. S. high level waste program are discussed. While much of the evolution of the site selection and characterization processes have been driven by the unique nature of the U. S. program, these processes, which are well-defined and documented, could be used as an initial basis for developing site screening, selection, and characterization programs in other countries. Thus, this paper focuses more on the process elements than the specific details of the U. S. program. (author). 3 refs., 2 tabs., 5 figs.

  12. Thermal effects on clay rocks for deep disposal of high-level radioactive waste

    Directory of Open Access Journals (Sweden)

    Chun-Liang Zhang

    2017-06-01

    Full Text Available Thermal effects on the Callovo-Oxfordian and Opalinus clay rocks for hosting high-level radioactive waste were comprehensively investigated with laboratory and in situ experiments under repository relevant conditions: (1 stresses covering the range from the initial lithostatic state to redistributed levels after excavation, (2 hydraulic drained and undrained boundaries, and (3 heating from ambient temperature up to 90 °C–120 °C and a subsequent cooling phase. The laboratory experiments were performed on normal-sized and large hollow cylindrical samples in various respects of thermal expansion and contraction, thermally-induced pore water pressure, temperature influences on deformation and strength, thermal impacts on swelling, fracture sealing and permeability. The laboratory results obtained from the samples are consistent with the in situ observations during heating experiments in the underground research laboratories at Bure and Mont-Terri. Even though the claystones showed significant responses to thermal loading, no negative effects on their favorable barrier properties were observed.

  13. Leach behavior of high-level borosilicate glasses under deep geological environment

    International Nuclear Information System (INIS)

    Kim, Seung Soo; Chun, Kwan Sik; Park, Hyun Soo

    1998-02-01

    This report presents an overview of the activities in high-level radioactive waste glass which is considered as the most practicable form of waste, and also is intended to be used in the disposal of national high-level radioactive waste in future. Leach theory of waste glass and the leach effects of ground water, metal barrier, buffer materials and rocks on the waste glass were reviewed. The leach of waste glass was affected by various factors such as composition, pH and Eh of ground water, temperature, pressure, radiation and humic acid. The crystallization, crack, weathering and the formation of altered phases of waste glass which is expected to occur in real disposal site were reviewed. The results of leaching in laboratory and in-situ were compared. The behaviors of radioactive elements leached from waste glass and the use of basalt glass for the long-term natural analogue of waste glass were also written in this report. The appraisal of durability of borosilicate waste glass as a waste media was performed from the known results of leach test and international in-situ tests were introduced. (author). 134 refs., 15 tabs., 24 figs

  14. Low-cost, high-precision micro-lensed optical fiber providing deep-micrometer to deep-nanometer-level light focusing.

    Science.gov (United States)

    Wen, Sy-Bor; Sundaram, Vijay M; McBride, Daniel; Yang, Yu

    2016-04-15

    A new type of micro-lensed optical fiber through stacking appropriate high-refractive microspheres at designed locations with respect to the cleaved end of an optical fiber is numerically and experimentally demonstrated. This new type of micro-lensed optical fiber can be precisely constructed with low cost and high speed. Deep micrometer-scale and submicrometer-scale far-field light spots can be achieved when the optical fibers are multimode and single mode, respectively. By placing an appropriate teardrop dielectric nanoscale scatterer at the far-field spot of this new type of micro-lensed optical fiber, a deep-nanometer near-field spot can also be generated with high intensity and minimum joule heating, which is valuable in high-speed, high-resolution, and high-power nanoscale detection compared with traditional near-field optical fibers containing a significant portion of metallic material.

  15. Defect modelling

    International Nuclear Information System (INIS)

    Norgett, M.J.

    1980-01-01

    Calculations, drawing principally on developments at AERE Harwell, of the relaxation about lattice defects are reviewed with emphasis on the techniques required for such calculations. The principles of defect modelling are outlined and various programs developed for defect simulations are discussed. Particular calculations for metals, ionic crystals and oxides, are considered. (UK)

  16. Radiation-Induced Defects in Kaolinite as Tracers of Past Occurrence of Radionuclides in a Natural Analogue of High Level Nuclear Waste Repository

    Science.gov (United States)

    Allard, T.; Fourdrin, C.; Calas, G.

    2007-05-01

    Understanding the processes controlling migrations of radioelements at the Earth's surface is an important issue for the long-term safety assessment of high level nuclear waste repositories (HLNWR). Evidence of past occurrence and transfer of radionuclides can be found using radiation-induced defects in minerals. Clay minerals are particularly relevant because of their widespread occurrence at the Earth's surface and their finely divided nature which provides high contact area with radioactive fluids. Owing to its sensitivity to radiations, kaolinite can be used as natural, in situ dosimeter. Kaolinite is known to contain radiation-induced defects which are detected by Electron Paramagnetic Resonance. They are differentiated by their nature, their production kinetics and their thermal stability. One of these defects is stable at the scale of geological periods and provides a record of past radionuclide occurrence. Based on artificial irradiations, a methodology has been subsequently proposed to determine paleodose cumulated by kaolinite since its formation. The paleodose can be used to derive equivalent radioelement concentrations, provided that the age of kaolinite formation can be constrained. This allows quantitative reconstruction of past transfers of radioelements in natural systems. An example is given for the Nopal I U-deposit (Chihuahua, Mexico), hosted in hydrothermally altered volcanic tufs and considered as analogue of the Yucca Mountain site. The paleodoses experienced by kaolinites were determined from the concentration of defects and dosimetry parameters of experimental irradiations. Using few geochemical assumption, a equivalent U-content responsible for defects in kaolinite was calculated from the paleodose, a dose rate balance and model ages of kaolinites constrained by tectonic phases. In a former study, the ages were assumptions derived from regional tectonic events. In thepresent study, ages of mineralization events are measured from U

  17. Dumping of low-level radioactive waste in the deep ocean

    International Nuclear Information System (INIS)

    Templeton, W.L.

    1980-01-01

    Two international agreements relate to the dumping of packaged radioactive waste into the oceans - the Convention on the Prevention of Marine Pollution by Dumping Wastes and Other Matter of 1972 (London Convention) and the Multilateral Consultation and Surveillance Mechanism for Sea Dumping of Radioactive Waste of 1977 under the Organization for Economic Co-operation and Development (OECD). The International Atomic Energy Agency was given the responsibility to define high-level radioactive wastes which are unsuitable for dumping in the oceans and to make recommendations for the dumping of other radioactive wastes. A revised Definition and Recommendations was submitted and accepted by the London Convention. This paper reviews the technical basis for the Definition and describes how it has been applied to the radiological assessment of the only operational dumping site in the North East Atlantic

  18. Characterization of deep energy levels in mercury iodide. Application to nuclear detection

    International Nuclear Information System (INIS)

    Mohammed Brahim, Tayeb.

    1982-07-01

    The last few years have seen an increasing interest in HgI 2 detectors for room temperature gamma and X-ray spectrometry. Performance and effective thickness of these detectors are presently limited by carrier trapping which results in incomplete charge collection. Characterization of the trapping levels has been performed by several photoelectronic methods (photoconductivity, thermal and optical quenching of the photoconductivity, TSC, lifetime measurement). A model is proposed taking into account the results obtained by these techniques and the polarization phenomena observed in nuclear detection in both vapor phase and solution grown crystals. For the latter, polarization can be eliminated or notably reduced by illumination of the positive electrode or by using a MIS positively biased structure [fr

  19. Enamel hypoplasia in deciduous teeth of great apes: do differences in defect prevalence imply differential levels of physiological stress?

    Science.gov (United States)

    Lukacs, J R

    1999-11-01

    This paper presents new data on enamel hypoplasia in the deciduous canine teeth of great apes. The enamel defect under consideration is known as localized hypoplasia of primary canines (LHPC), and is characterized by an area of thin or missing enamel on the labial surface of deciduous canine teeth (Skinner [1986a] Am. J. Phys. Anthropol. 69:59-69). Goals of this study are: 1) to determine if significant differences in the frequency of LHPC occur among three genera of great apes, and 2) to evaluate variation in LHPC prevalence among great apes as evidence of differential physiological stress. Infant and juvenile apes with deciduous teeth were examined at the Cleveland Museum of Natural History (n = 100) and at the Smithsonian Institution, National Museum of Natural History (n = 36). Deciduous teeth were observed under oblique incandescent light, with the naked eye and with a 10x hand lens. Enamel hypoplasia was scored using Federation Dentaire International (FDI)-Defects of Dental Enamel (DDE) standards. Hypoplasias were recorded by drawing defect location and size on a dental chart, and by measuring defect size and location with Helios needlepoint dial calipers. The prevalence of LHPC is reported by genus and sex, using two approaches: 1) the frequency of affected individuals-those having one or more deciduous canine teeth scored positive for LHPC; and 2) the number of canine teeth scored positive for LHPC as a percentage of all canine teeth observed. Variation in defect size and location will be described elsewhere. Localized hypoplasia of primary canine teeth was found in 62.5% of 128 individual apes, and in 45.5% of 398 great ape deciduous canines. As in humans, LHPC is the most common form of enamel hypoplasia in deciduous teeth of great apes, while LEH is rare or absent. The distribution and pattern of expression of LHPC in great apes is similar to that described in humans: side differences are not significant, but mandibular canines exhibit the defect two to

  20. Greedy Deep Dictionary Learning

    OpenAIRE

    Tariyal, Snigdha; Majumdar, Angshul; Singh, Richa; Vatsa, Mayank

    2016-01-01

    In this work we propose a new deep learning tool called deep dictionary learning. Multi-level dictionaries are learnt in a greedy fashion, one layer at a time. This requires solving a simple (shallow) dictionary learning problem, the solution to this is well known. We apply the proposed technique on some benchmark deep learning datasets. We compare our results with other deep learning tools like stacked autoencoder and deep belief network; and state of the art supervised dictionary learning t...

  1. Chronic Deep Brain Stimulation of the Hypothalamic Nucleus in Wistar Rats Alters Circulatory Levels of Corticosterone and Proinflammatory Cytokines

    Science.gov (United States)

    Calleja-Castillo, Juan Manuel; De La Cruz-Aguilera, Dora Luz; Manjarrez, Joaquín; Velasco-Velázquez, Marco Antonio; Morales-Espinoza, Gabriel; Moreno-Aguilar, Julia; Hernández, Maria Eugenia; Aguirre-Cruz, Lucinda

    2013-01-01

    Deep brain stimulation (DBS) is a therapeutic option for several diseases, but its effects on HPA axis activity and systemic inflammation are unknown. This study aimed to detect circulatory variations of corticosterone and cytokines levels in Wistar rats, after 21 days of DBS-at the ventrolateral part of the ventromedial hypothalamic nucleus (VMHvl), unilateral cervical vagotomy (UCVgX), or UCVgX plus DBS. We included the respective control (C) and sham (S) groups (n = 6 rats per group). DBS treated rats had higher levels of TNF-α (120%; P < 0.01) and IFN-γ (305%; P < 0.001) but lower corticosterone concentration (48%; P < 0.001) than C and S. UCVgX animals showed increased corticosterone levels (154%; P < 0.001) versus C and S. UCVgX plus DBS increased IL-1β (402%; P < 0.001), IL-6 (160%; P < 0.001), and corsticosterone (178%; P < 0.001 versus 48%; P < 0.001) compared with the C and S groups. Chronic DBS at VMHvl induced a systemic inflammatory response accompanied by a decrease of HPA axis function. UCVgX rats experienced HPA axis hyperactivity as result of vagus nerve injury; however, DBS was unable to block the HPA axis hyperactivity induced by unilateral cervical vagotomy. Further studies are necessary to explore these findings and their clinical implication. PMID:24235973

  2. Scanning tip measurement for identification of point defects

    Directory of Open Access Journals (Sweden)

    Raineri Vito

    2011-01-01

    Full Text Available Abstract Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage, current-voltage, and deep level transient spectroscopy (DLTS were used to measure the electrical properties of Au/silicon Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM were applied to measure local electrical properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth. These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM.

  3. SPRAYED CLAY TECHNOLOGY FOR THE DEEP REPOSITORY OF HIGH-LEVEL RADIOACTIVE WASTE

    Directory of Open Access Journals (Sweden)

    Lucie Hausmannová

    2012-07-01

    Full Text Available The sealing barrier will play very important role in the Czech disposal concept of high level radioactive waste. It follows Swedish SKB3 design where granitic rock environment will host the repository. Swelling clay based materials as the most favorable for sealing purposes were selected. Such clays must fulfill certain requirements (e.g. on swelling properties, hydraulic conductivity or plasticity and must be stable for thousands of years. Better sealing behavior is obtained when the clay is compacted. Technology of the seal construction can vary according to its target dry density. Very high dry density is needed for buffer (sealing around entire canister with radioactive waste. Less strict requirements are on material backfilling the access galleries. It allows compaction to lower dry density than in case of buffer. One of potential technology for backfilling is to compact clay layers in most of the gallery profile by common compaction machines (rollers etc. and to spray clay into the uppermost part afterwards. The paper introduces the research works on sprayed clay technology performed at the Centre of Experimental Geotechnics of the Czech Technical University in Prague. Large scale in situ demonstration of filling of short drift in the Josef Gallery is also mentioned.

  4. Automated capacitive spectrometer for measuring the parameters of deep centers in semiconductor materials

    International Nuclear Information System (INIS)

    Shajmeev, S.S.

    1985-01-01

    An automated capacitive spectrometer for determining deep centers parameters in semiconductor materials and instruments is described. The facility can be used in studying electrically active defects (impurity, radiation, thermal) having deep levels in the forbidden semiconductor zone. The facility permits to determine the following parameters of the deep centers: concentration of each deep level taken separately within 5x10 -1 +-5x10 -15 of the alloying impurity concentration, level energy position in the forbidden semiconductor zone in the range from 0.08 MeV above the valency zone ceiling to 0.08 eV below the conductivity zone bottom, hole or electron capture cross-section on the deep center; concentration profile of deep levels

  5. Hydrogeologic modelling in support of a proposed Deep Geologic Repository in Canada for low and intermediate level radioactive waste

    Energy Technology Data Exchange (ETDEWEB)

    Sykes, J.F.; Normani, S.D.; Yin, Y. [Waterloo Univ., ON (Canada). Dept. of Civil and Environmental Engineering; Sykes, E.A.; Jensen, M.R. [Nuclear Waste Management Organization, Toronto, ON (Canada)

    2009-07-01

    Ontario Power Generation (OPG) has proposed the construction of a Deep Geologic Repository (DGR) for low and intermediate level radioactive waste at the Bruce site on the shore of Lake Huron near Tiverton, Ontario. The DGR is to be excavated at a depth of about 680 m within argillaceous limestones of Ordovician age. A saturated regional-scale and site-scale numerical modelling study has been completed in order to evaluate the safety of storing radioactive waste at the site and to better understand the geochemistry and hydrogeology of the formations surrounding the proposed DGR. This paper reported on the regional-scale base-case modelling and analysis of the measured pressure profile in deep boreholes at the DGR site. The numerical modelling study provided a framework to investigate the groundwater flow system as it relates to, and potentially affects, the safety and long-term performance of the DGR. A saturated groundwater flow model was also developed using FRAC3DVS-OPG. The objective of regional-scale groundwater modelling of the Paleozoic sedimentary sequence underlying southwestern Ontario was to provide a basis for the assembly and integration of site-specific geoscientific data and to explain the influence of parameter and scenario uncertainty on predicted long-term geosphere barrier performance. The base-case analysis showed that solute transport in the Ordovician and lower Silurian is diffusion dominant. For the base-case parameters, the estimated mean life expectancy for the proposed DGR is more than 8 million years. The possible presence of a gas phase in the rock between the Cambrian and the Niagaran was not considered in the analyses of this paper. 9 refs., 2 tabs., 10 figs.

  6. Higher O-GlcNAc Levels Are Associated with Defects in Progenitor Proliferation and Premature Neuronal Differentiation during in-Vitro Human Embryonic Cortical Neurogenesis

    Directory of Open Access Journals (Sweden)

    Shama Parween

    2017-12-01

    Full Text Available The nutrient responsive O-GlcNAcylation is a dynamic post-translational protein modification found on several nucleocytoplasmic proteins. Previous studies have suggested that hyperglycemia induces the levels of total O-GlcNAcylation inside the cells. Hyperglycemia mediated increase in protein O-GlcNAcylation has been shown to be responsible for various pathologies including insulin resistance and Alzheimer's disease. Since maternal hyperglycemia during pregnancy is associated with adverse neurodevelopmental outcomes in the offspring, it is intriguing to identify the effect of increased protein O-GlcNAcylation on embryonic neurogenesis. Herein using human embryonic stem cells (hESCs as model, we show that increased levels of total O-GlcNAc is associated with decreased neural progenitor proliferation and premature differentiation of cortical neurons, reduced AKT phosphorylation, increased apoptosis and defects in the expression of various regulators of embryonic corticogenesis. As defects in proliferation and differentiation during neurodevelopment are common features of various neurodevelopmental disorders, increased O-GlcNAcylation could be one mechanism responsible for defective neurodevelopmental outcomes in metabolically compromised pregnancies such as diabetes.

  7. Thermal evolution and exhumation of deep-level batholithic exposures, southernmost Sierra Nevada, California

    Science.gov (United States)

    Saleeby, J.; Farley, K.A.; Kistler, R.W.; Fleck, R.J.

    2007-01-01

    The Tehachapi complex lies at the southern end of the Sierra Nevada batholith adjacent to the Neogene-Quaternary Garlock fault. The complex is composed principally of high-pressure (8-10 kbar) Cretaceous batholithic rocks, and it represents the deepest exposed levels of a continuous oblique crustal section through the southern Sierra Nevada batholith. Over the southern ???100 km of this section, structural/petrologic continuity and geochronological data indicate that ???35 km of felsic to intermediate-composition crust was generated by copious arc magmatism primarily between 105 and 99 Ma. In the Tehachapi complex, these batholithic rocks intrude and are bounded to the west by similar-composition gneissic-textured high-pressure batholithic rocks emplaced at ca. 115-110 Ma. This lower crustal complex is bounded below by a regional thrust system, which in Late Cretaceous time tectonically eroded the underlying mantle lithosphere, and in series displaced and underplated the Rand Schist subduction assemblage by low-angle slip from the outboard Franciscan trench. Geophysical and mantle xenolith studies indicate that the remnants of this shallow subduction thrust descend northward through the crust and into the mantle, leaving the mantle lithosphere intact beneath the greater Sierra Nevada batholith. This north-dipping regional structure records an inflection in the Farallon plate, which was segmented into a shallow subduc-tion trajectory to the south and a normal steeper trajectory to the north. We combine new and published data from a broad spectrum of thermochronom-eters that together form a coherent data array constraining the thermal evolution of the complex. Integration of these data with published thermobarometric and petro-genetic data also constrains the tectonically driven decompression and exhumation history of the complex. The timing of arc magmatic construction of the complex, as denoted above, is resolved by a large body of U/Pb zircon ages. High

  8. Deep Uncertainties in Sea-Level Rise and Storm Surge Projections: Implications for Coastal Flood Risk Management.

    Science.gov (United States)

    Oddo, Perry C; Lee, Ben S; Garner, Gregory G; Srikrishnan, Vivek; Reed, Patrick M; Forest, Chris E; Keller, Klaus

    2017-09-05

    Sea levels are rising in many areas around the world, posing risks to coastal communities and infrastructures. Strategies for managing these flood risks present decision challenges that require a combination of geophysical, economic, and infrastructure models. Previous studies have broken important new ground on the considerable tensions between the costs of upgrading infrastructure and the damages that could result from extreme flood events. However, many risk-based adaptation strategies remain silent on certain potentially important uncertainties, as well as the tradeoffs between competing objectives. Here, we implement and improve on a classic decision-analytical model (Van Dantzig 1956) to: (i) capture tradeoffs across conflicting stakeholder objectives, (ii) demonstrate the consequences of structural uncertainties in the sea-level rise and storm surge models, and (iii) identify the parametric uncertainties that most strongly influence each objective using global sensitivity analysis. We find that the flood adaptation model produces potentially myopic solutions when formulated using traditional mean-centric decision theory. Moving from a single-objective problem formulation to one with multiobjective tradeoffs dramatically expands the decision space, and highlights the need for compromise solutions to address stakeholder preferences. We find deep structural uncertainties that have large effects on the model outcome, with the storm surge parameters accounting for the greatest impacts. Global sensitivity analysis effectively identifies important parameter interactions that local methods overlook, and that could have critical implications for flood adaptation strategies. © 2017 Society for Risk Analysis.

  9. Metastable defect response in CZTSSe from admittance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Koeper, Mark J.; Hages, Charles J.; Li, Jian V.; Levi, Dean; Agrawal, Rakesh

    2017-10-02

    Admittance spectroscopy is a useful tool used to study defects in semiconductor materials. However, metastable defect responses in non-ideal semiconductors can greatly impact the measurement and therefore the interpretation of results. Here, admittance spectroscopy was performed on Cu2ZnSn(S,Se)4 where metastable defect response is illustrated due to the trapping of injected carriers into a deep defect state. To investigate the metastable response, admittance measurements were performed under electrically and optically relaxed conditions in comparison to a device following a low level carrier-injection pretreatment. The relaxed measurement demonstrates a single capacitance signature while two capacitance signatures are observed for the device measured following carrier-injection. The deeper level signature, typically reported for kesterites, is activated by charge trapping following carrier injection. Both signatures are attributed to bulk level defects. The significant metastable response observed on kesterites due to charge trapping obscures accurate interpretation of defect levels from admittance spectroscopy and indicates that great care must be taken when performing and interpreting this measurement on non-ideal devices.

  10. Spatial distribution of orofacial cleft defect births in Harris County, Texas, 1990 to 1994, and historical evidence for the presence of low-level radioactivity in tap water.

    Science.gov (United States)

    Cech, Irina; Burau, Keith D; Walston, Jane

    2007-06-01

    While both ionizing and nonionizing radiation are known to impair human reproductive capacity, the role of low-level domestic radiation continues to be an unsettled issue. We examined the geostatistical distribution (residential longitude and latitude) of orofacial cleft birth cases adjusted for the underlying population distribution. Furthermore, we examined the cleft birth rates enumerated by zip codes for possible associations with levels of radium and radon in drinking water. Cleft births and unaffected live births in Harris County, Texas, from 1990 to 1994, were geocoded by residential addresses and tested for spatial clusters using the space-time clustering program SaTScan. Historical sample data on local variations in water quality facilitated the assessment of the association of orofacial cleft defect births with low-level radiation exposure. A cluster of significantly greater than expected numbers of cleft defect births was identified in northwest Harris County, (relative risk = 3.0, P = 0.043), where the presence of elevated levels of radium (> 3 pCi/L) and radon (> 300 pCi/L) in the tap water has been known since the 1980s. Despite the ecological design of the study, lacking individual exposure measurements for cleft birth residences, there was strong suggestive evidence of an association between elevated radiation levels in tap water and elevated cleft birth prevalence rates by zip codes. Attention of physicians is invited to environmental causes as potential risk factors for orofacial cleft. This would aid in genetic counseling and the development of future preventive measures.

  11. RNA deep sequencing reveals novel candidate genes and polymorphisms in boar testis and liver tissues with divergent androstenone levels.

    Directory of Open Access Journals (Sweden)

    Asep Gunawan

    Full Text Available Boar taint is an unpleasant smell and taste of pork meat derived from some entire male pigs. The main causes of boar taint are the two compounds androstenone (5α-androst-16-en-3-one and skatole (3-methylindole. It is crucial to understand the genetic mechanism of boar taint to select pigs for lower androstenone levels and thus reduce boar taint. The aim of the present study was to investigate transcriptome differences in boar testis and liver tissues with divergent androstenone levels using RNA deep sequencing (RNA-Seq. The total number of reads produced for each testis and liver sample ranged from 13,221,550 to 33,206,723 and 12,755,487 to 46,050,468, respectively. In testis samples 46 genes were differentially regulated whereas 25 genes showed differential expression in the liver. The fold change values ranged from -4.68 to 2.90 in testis samples and -2.86 to 3.89 in liver samples. Differentially regulated genes in high androstenone testis and liver samples were enriched in metabolic processes such as lipid metabolism, small molecule biochemistry and molecular transport. This study provides evidence for transcriptome profile and gene polymorphisms of boars with divergent androstenone level using RNA-Seq technology. Digital gene expression analysis identified candidate genes in flavin monooxygenease family, cytochrome P450 family and hydroxysteroid dehydrogenase family. Moreover, polymorphism and association analysis revealed mutation in IRG6, MX1, IFIT2, CYP7A1, FMO5 and KRT18 genes could be potential candidate markers for androstenone levels in boars. Further studies are required for proving the role of candidate genes to be used in genomic selection against boar taint in pig breeding programs.

  12. A review of the predictive modelling and data requirements for the long-term safety assessment of the deep disposal of low and intermediate level radioactive wastes

    International Nuclear Information System (INIS)

    Broyd, T.W.

    1988-06-01

    This report considers the Her Majesty's Inspectorate of Pollution research and modelling requirements for a robust post-closure radiological risk assessment methodology applicable to the deep disposal of Low-Level Wastes and Intermediate-Level Wastes. Two disposal concepts have been envisaged: horizontal tunnels or galleries in a low permeability stratum of a sedimentary sequence located inland; vertical boreholes or shafts up to 15m diameter lined with concrete and of the order 500m to 1000m deep sunk into the seabed within territorial coastal waters of the United Kingdom. (author)

  13. Quantum computing with defects.

    Science.gov (United States)

    Weber, J R; Koehl, W F; Varley, J B; Janotti, A; Buckley, B B; Van de Walle, C G; Awschalom, D D

    2010-05-11

    Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV(-1)) center stands out for its robustness--its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV(-1) center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally coordinated semiconductors.

  14. Dual-wavelength photo-Hall effect spectroscopy of deep levels in high resistive CdZnTe with negative differential photoconductivity

    Science.gov (United States)

    Musiienko, A.; Grill, R.; Moravec, P.; Korcsmáros, G.; Rejhon, M.; Pekárek, J.; Elhadidy, H.; Šedivý, L.; Vasylchenko, I.

    2018-04-01

    Photo-Hall effect spectroscopy was used in the study of deep levels in high resistive CdZnTe. The monochromator excitation in the photon energy range 0.65-1.77 eV was complemented by a laser diode high-intensity excitation at selected photon energies. A single sample characterized by multiple unusual features like negative differential photoconductivity and anomalous depression of electron mobility was chosen for the detailed study involving measurements at both the steady and dynamic regimes. We revealed that the Hall mobility and photoconductivity can be both enhanced and suppressed by an additional illumination at certain photon energies. The anomalous mobility decrease was explained by an excitation of the inhomogeneously distributed deep level at the energy Ev + 1.0 eV, thus enhancing potential non-uniformities. The appearance of negative differential photoconductivity was interpreted by an intensified electron occupancy of that level by a direct valence band-to-level excitation. Modified Shockley-Read-Hall theory was used for fitting experimental results by a model comprising five deep levels. Properties of the deep levels and their impact on the device performance were deduced.

  15. Entropy-driven metastable defects in silicon

    International Nuclear Information System (INIS)

    Hamilton, B.; Peaker, A.R.; Pantelides, S.T.

    1989-01-01

    The known metastable defects are usually describable by a configuration coordinate diagram in which two energy minima are separated by a barrier. This diagram does not change with temperature and each configuration is stable over some temperature range. Here we report the observation of a novel metastability: A configuration change occurs spontaneously and abruptly at a critical temperature, giving rise to a discontinuous DLTS (deep level transient spectroscopy) spectrum. We propose that this phenomenon is a manifestation of entropy variations in the configurational space. (author) 12 refs., 4 figs

  16. Siting, design and construction of a deep geological repository for the disposal of high level and alpha bearing wastes

    International Nuclear Information System (INIS)

    1990-06-01

    The main objective of this document is to summarize the basic principles and approaches to siting, design and construction of a deep geological repository for disposal of high level and alpha bearing radioactive wastes, as commonly agreed upon by Member States. This report is addressed to decision makers and technical managers as well as to specialists planning for siting, design and construction of geological repositories for disposal of high level and alpha bearing wastes. This document is intended to provide Member States of the IAEA with a summary outline for the responsible implementing organizations to use for siting, designing and constructing confinement systems for high level and alpha bearing radioactive waste in accordance with the protection objectives set by national regulating authorities or derived from safety fundamentals and standards of the IAEA. The protection objectives will be achieved by the isolation of the radionuclides from the environment by a repository system, which consists of a series of man made and natural safety barriers. Engineered barriers are used to enhance natural geological containment in a variety of ways. They must complement the natural barriers to provide adequate safety and necessary redundancy to the barrier system to ensure that safety standards are met. Because of the long timescales involved and the important role of the natural barrier formed by the host rock, the site selection process is a key activity in the repository design and development programme. The choice of the site, the investigation of its geological setting, the exploration of the regional hydrogeological setting and the primary underground excavations are all considered to be part of the siting process. 16 refs

  17. DeepPy: Pythonic deep learning

    DEFF Research Database (Denmark)

    Larsen, Anders Boesen Lindbo

    This technical report introduces DeepPy – a deep learning framework built on top of NumPy with GPU acceleration. DeepPy bridges the gap between highperformance neural networks and the ease of development from Python/NumPy. Users with a background in scientific computing in Python will quickly...... be able to understand and change the DeepPy codebase as it is mainly implemented using high-level NumPy primitives. Moreover, DeepPy supports complex network architectures by letting the user compose mathematical expressions as directed graphs. The latest version is available at http...

  18. Defect phase diagram for doping of Ga2O3

    Science.gov (United States)

    Lany, Stephan

    2018-04-01

    For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO2), and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor) center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO2) conditions. Considering further the stability constraints due to sublimation of molecular Ga2O, specific predictions of optimized pO2 and Si dopant concentrations are given. The incomplete passivation of dopant-defect complexes in β-Ga2O3 suggests a design rule for metastable doping above the solubility limit.

  19. Defect phase diagram for doping of Ga2O3

    Directory of Open Access Journals (Sweden)

    Stephan Lany

    2018-04-01

    Full Text Available For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn, a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T, O partial pressures (pO2, and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO2 conditions. Considering further the stability constraints due to sublimation of molecular Ga2O, specific predictions of optimized pO2 and Si dopant concentrations are given. The incomplete passivation of dopant-defect complexes in β-Ga2O3 suggests a design rule for metastable doping above the solubility limit.

  20. The potential of natural analogues in assessing systems for deep disposal of high-level radioactive waste

    International Nuclear Information System (INIS)

    Chapman, N.A.; Smellie, J.A.T.

    1984-08-01

    Many of the processes which will lead to the breakdown of engineered barriers and the mobilisation of radionuclides in a deep waste repository have analogies in natural geological systems. These 'natural analogues' are seen as a particularly important means of validating predictive models, under the broad heading of radionuclide migration, which are used in long-term safety analyses. Their principal value is the opportunity they provide to examine processes occurring over geological timescales, hence allowing more confident extrapolation of short timescales experimental data. This report begins by reviewing the processes leading to breakdown of containment in a high-level radioactive waste repository in crystalline bedrock and the subsequent migration mechanisms for radionuclides back to the biosphere. Nine specific processes are identified as being of the most significance in migration models, based on available sensitivity analyses. Existing studies are assessed and possibilities considered for additional analogues. Conclusions are drawn for each process as to the extent to which analogues validate current predictions on scale and effect, longevity of function, etc. Where possible, quantitative evaluations are given, derived from analogue studies. A considerable amount of the information reviewed and presented could be used in the assessment of disposal of other waste types in other host rocks. (Auth.)

  1. OPG's deep geologic repository for low and intermediate level waste - public participation and aboriginal engagement

    International Nuclear Information System (INIS)

    Wilson, M.

    2011-01-01

    Ontario Power Generation (OPG)'s Public Participation and Aboriginal Engagement Program for the proposed Deep Geologic Repository (DGR) for low and intermediate level waste (L and ILW) began with the signing of a Memorandum of Understanding (MOU) in 2002 between OPG and the Municipality of Kincardine. The MOU set out the terms under which the two parties would jointly study the feasibility of different options for the long-term management of L and ILW at the Bruce nuclear site. A consultant, independent from both the Municipality of Kincardine and OPG, was retained to manage the assessment of options as well as a communication plan to ensure the public and Aboriginal peoples were kept apprised of all activities associated with the MOU. This early commitment to transparency and openness, with its ensuing opportunities for the public and Aboriginal peoples to become informed, ask questions, and engage in meaningful two-way dialogue about the early assessment of options, established the foundation and later became the hallmark of the DGR Project's Public Participation and Aboriginal Engagement program. This paper provides an overview of the development, nature and results of that program as it has evolved through the early investigative stages of options and through the environmental assessment and licencing process for the proposed DGR Project. (author)

  2. The OPG/Kincardine hosting agreement for a deep geologic repository for OPG's low- and intermediate-level waste

    International Nuclear Information System (INIS)

    Castellan, A.G.; Barker, D.E.

    2006-01-01

    A Hosting Agreement has been reached between Ontario Power Generation and the Municipality of Kincardine for the purpose of siting a long-term management facility for low- and intermediate-level radioactive waste at the Western Waste Management Facility. Following an independent review of the feasibility of three options for a long-term facility at the site, including a review of the safety, geotechnical feasibility, social and economic effects and potential environmental effects, Kincardine passed a resolution indicating their preference for a Deep Geologic Repository. A Host Community Agreement has been negotiated based on this preference, and on information that had been gathered from municipal authorities at other locations that have hosted similar facilities. The Hosting Agreement includes financial compensation, totalling $35.7 million (Canadian 2004) to the Municipality of Kincardine and to four surrounding municipalities. The financial aspects include lump sum payments based on achieving specific project milestones as well as annual payments to each of the municipalities. The payments are indexed to inflation, and are also contingent on the municipalities acting reasonably and in good faith during the licencing process of the proposed facility. In addition to the fees, the Agreement includes provision for a Property Value Protection Plan that would provide residents with compensation in the event that there is depreciation in property value shown to directly result from a release from the proposed facility. New permanent OPG jobs supporting the project would be located at the site. OPG and Kincardine will support a centre of nuclear excellence. (author)

  3. The hydrogeologic environment for a proposed deep geologic repository in Canada for low and intermediate level radioactive waste - 59285

    International Nuclear Information System (INIS)

    Sykes, Jonathan F.; Normani, Stefano D.; Yin, Yong; Jensen, Mark R.

    2012-01-01

    A Deep Geologic Repository (DGR) for low and intermediate level radioactive waste has been proposed by Ontario Power Generation for the Bruce nuclear site in Ontario, Canada. As proposed the DGR would be constructed at a depth of about 680 m below ground surface within the argillaceous Ordovician limestone of the Cobourg Formation. This paper describes the hydrogeology of the DGR site developed through both site characterization studies and regional-scale numerical modelling analysis. The analysis provides a framework for the assembly and integration of the site-specific geo-scientific data and examines the factors that influence the predicted long-term performance of the geosphere barrier. Flow system evolution was accomplished using both the density-dependent FRAC3DVS-OPG flow and transport model and the two-phase gas and water flow computational model TOUGH2-MP. In the geologic framework of the Province of Ontario, the DGR is located on the eastern flank of the Michigan Basin. Borehole logs covering Southern Ontario combined with site-specific data from 6 deep boreholes have been used to define the structural contours and hydrogeologic properties at the regional-scale of the modelled 31 sedimentary strata that may be partially present above the Precambrian crystalline basement rock. The regional-scale domain encompasses an approximately 18500 km 2 region extending from Lake Huron to Georgian Bay. The groundwater zone below the Devonian includes units containing stagnant water having high concentrations of total dissolved solids that can exceed 300 g/L. The Ordovician sediments are significantly under-pressured. The horizontal hydraulic conductivity for the Cobourg limestone is estimated to be 2x10 -14 m/s based on straddle-packer hydraulic tests. The low advective velocities in the Cobourg and other Ordovician units result in solute transport that is diffusion dominant with Peclet numbers less than 0:003 for a characteristic length of unity. Long

  4. Long-term degradation of organic polymers under conditions found in deep repositories for low and intermediate-level wastes

    International Nuclear Information System (INIS)

    Warthmann, R.; Mosberger, L.; Baier, U.

    2013-06-01

    On behalf of Nagra, the Environmental Biotechnology Section of the Zürich University of Applied Sciences in Wädenswil investigated the potential for microbiological degradation of organic polymers under the conditions found in a deep geological repository for low- and intermediate-level waste (L/ILW). The existing scientific literature on the topic was analysed, some thermodynamic calculations carried out and input was elicited from internationally recognised experts in the field. The study was restricted to a few substances which, in terms of mass, are most significant in the Swiss L/ILW inventory; these are polystyrene (PS), polyvinyl chloride (PVC), other plastics and bitumen. There were no clear indications in the literature that the polymer structure of synthetic polymers is biodegraded under anoxic conditions. However, functional groups of ion exchangers and plasticizers in plastics are considered to be readily available and biodegradable. The greatest obstacle to biological degradation of synthetic polymers is depolymerisation to produce labile monomers. As energy is generally required for such breakdown, the chances of this process taking place outside the cells are very low. In so far as they are present, monomers are, in principle, anaerobically biodegradable. Thermodynamic considerations indicate that degradation of synthetic polymers under repository conditions is theoretically possible. However, the degradation of polystyrene is very close to thermodynamic equilibrium and the usable energy for microorganisms would barely be sufficient. Under high H2 partial pressures, it is predicted that there will be a thermodynamic inhibition of anaerobic degradation, as certain interim steps in degradation are endergonic. The starting conditions for microbial growth in a deep repository are unfavourable in terms of availability of water and prevailing pH values. Practically no known microorganisms can tolerate the combination of these conditions; most known

  5. Reconciling the sea level record of the last deglaciation with the δ18O spectra from deep sea cores

    International Nuclear Information System (INIS)

    Bard, Edouard; Columbia Univ., Palisades, NY; Arnold, Maurice; Duplessy, J.-C.

    1991-01-01

    In this paper we use the oxygen isotope record as a transient tracer to study palaeoceanography during the last deglaciation. By using 14 C and 18 O data obtained on four deep sea sediment cores, we show the presence of a measurable lag between the deglacial δ 18 O signal observed in the deep Atlantic and the deep Indo-Pacific oceans. Our study confirms that the major meltwater discharge occurred via the North Atlantic and that the thermohaline circulation was operating during the deglacial transition. (Author)

  6. Defect formation in n-type InP at elevated temperatures of irradiation

    International Nuclear Information System (INIS)

    Kozlovskij, V.V.; Kol'chenko, T.I.; Lomako, V.M.; Moroz, S.E.

    1990-01-01

    Effect of irradiation temperature within 25-250 deg C traps in InP. Rate of most deep level introduction, as well as, rate of charge carrier removing at the increase of irradiation temperature are shown to decrease and it is explained by defect annealing occuring simultaneously with irradiation

  7. MECHANISMS OF MANTLE‐CRUST INTERACTION AT DEEP LEVELS OF COLLISION OROGENS (CASE OF THE OLKHON REGION, WEST PRIBAIKALIE

    Directory of Open Access Journals (Sweden)

    A. G. Vladimirov

    2017-01-01

    zones, which is fol‐ lowed by metamorphic magma mingling under viscous deformation conditions. The mafic magmas intruding to the level of the granulite facies facilitated the deep anatexis and formation of synmetamorphic hypersthene plagiogranites (U‐Pb isotope dating: 500–490 Ma and high‐K stress granites. In the Chernorud granulite zone, intense ductile‐plastic and brittle‐plastic deformations accompanied the processes of metamorphism, intrusion and formation of gabbro‐ pyroxenites and the anatexis of the crustal substance. As a result, the intrusive bodies were fragmented, and specific tectonic structures termed ‘metamorphic magma‐mingling’ were formed. All the tectonic and magmatic structures were subsequently ‘sealed up’ by K‐Na synkinematic granites at the regressive stage under conditions of the amphibo‐ lite‐facies metamorphism (U‐Pb and Ar‐Ar isotope dating: 470–460 Ma.

  8. Plasma folate levels and associated factors in women planning to become pregnant in a population with high prevalence of neural tube defects.

    Science.gov (United States)

    Ma, Rui; Wang, Linlin; Jin, Lei; Li, Zhiwen; Ren, Aiguo

    2017-07-17

    Optimal blood folate levels of women before pregnancy are critical to the prevention of neural tube defects (NTDs). However, few studies have focused on blood folate levels of women planning to become pregnant. The aims of this study were to assess plasma folate levels in women who planned to become pregnant in a population with high prevalence of NTDs, to identify factors associated with plasma folate levels, and to evaluate the risk of NTDs at the population level. A total of 2065 women were enrolled at the time of premarital health check-up in two rural counties in northern China from November 2009 to December 2012. Fasting venous blood samples were collected and plasma folate concentrations were measured by microbiological method. The overall median of plasma folate was 10.5 nmol/L. 50% of the women had a plasma folate level below 10.5 nmol/L, a cutoff for megaloblastic anemia, and 88% below 18 nmol/L, a proposed optimal plasma folate level for the prevention of NTDs. Folic acid supplementation was the only factor to be associated with plasma folate concentrations, but only 1.9% of the women reported having taken folic acid supplements. A population risk of 29.3 NTD cases per 10,000 births was predicted. Women who planned to become pregnant had very low plasma folate in the population. Folic acid supplementation was the only factor to be associated with a high plasma folate concentration. High NTD risk would remain if women would get pregnant without having taken folic acid supplements. Birth Defects Research 109:1039-1047, 2017. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

  9. Maximum flood hazard assessment for OPG's deep geologic repository for low and intermediate level waste

    International Nuclear Information System (INIS)

    Nimmrichter, P.; McClintock, J.; Peng, J.; Leung, H.

    2011-01-01

    Ontario Power Generation (OPG) has entered a process to seek Environmental Assessment and licensing approvals to construct a Deep Geologic Repository (DGR) for Low and Intermediate Level Radioactive Waste (L&ILW) near the existing Western Waste Management Facility (WWMF) at the Bruce nuclear site in the Municipality of Kincardine, Ontario. In support of the design of the proposed DGR project, maximum flood stages were estimated for potential flood hazard risks associated with coastal, riverine and direct precipitation flooding. The estimation of lake/coastal flooding for the Bruce nuclear site considered potential extreme water levels in Lake Huron, storm surge and seiche, wind waves, and tsunamis. The riverine flood hazard assessment considered the Probable Maximum Flood (PMF) within the local watersheds, and within local drainage areas that will be directly impacted by the site development. A series of hydraulic models were developed, based on DGR project site grading and ditching, to assess the impact of a Probable Maximum Precipitation (PMP) occurring directly at the DGR site. Overall, this flood assessment concluded there is no potential for lake or riverine based flooding and the DGR area is not affected by tsunamis. However, it was also concluded from the results of this analysis that the PMF in proximity to the critical DGR operational areas and infrastructure would be higher than the proposed elevation of the entrance to the underground works. This paper provides an overview of the assessment of potential flood hazard risks associated with coastal, riverine and direct precipitation flooding that was completed for the DGR development. (author)

  10. Decontamination by replacing soil and soil cover with deep-level soil in flower beds and vacant places in Northern Fukushima Prefecture

    International Nuclear Information System (INIS)

    Sugiura, Hiroyuki; Kawano, Keisuke; Kayama, Yukihiko; Koube, Nobuyuki

    2012-01-01

    Radioactivity decontamination by replacing soil and soil cover with deep-level soil and soil cover in flower beds and a vacant place in Northern Fukushima Prefecture were studied, which experienced radioactive contamination due to the accident at the TEPCO's Fukushima Daiichi Nuclear Power Plant. Radioactivity counting rate 1 cm above the soil surface after replacing surface soil with uncontaminated deep-level soil decreased to 13.7% of the control in gardens. The concentration of radioactive cesium in the cover soil increased after 132 days; however, it decreased in the old surface soil under the cover soil in flower beds. A 10 cm deep-level soil cover placed by heavy machinery decreased the radiation dose rate to 70.8% of the control and radioactivity counting rate to 24.6% in the vacant place. Replacing the radioactively contaminated surface soil and soil cover with a deep-level soil was a reasonable decontamination method for the garden and vacant place because it is quick, cost effective and labour efficient. (author)

  11. Defects at oxide surfaces

    CERN Document Server

    Thornton, Geoff

    2015-01-01

    This book presents the basics and characterization of defects at oxide surfaces. It provides a state-of-the-art review of the field, containing information to the various types of surface defects, describes analytical methods to study defects, their chemical activity and the catalytic reactivity of oxides. Numerical simulations of defective structures complete the picture developed. Defects on planar surfaces form the focus of much of the book, although the investigation of powder samples also form an important part. The experimental study of planar surfaces opens the possibility of applying the large armoury of techniques that have been developed over the last half-century to study surfaces in ultra-high vacuum. This enables the acquisition of atomic level data under well-controlled conditions, providing a stringent test of theoretical methods. The latter can then be more reliably applied to systems such as nanoparticles for which accurate methods of characterization of structure and electronic properties ha...

  12. Diffusive, Structural, Optical, and Electrical Properties of Defects in Semiconductors

    CERN Multimedia

    Wagner, F E

    2002-01-01

    Electronic properties of semiconductors are extremely sensitive to defects and impurities that have localized electronic states with energy levels in the band gap of the semiconductor. Spectroscopic techniques like photoluminescence (PL), deep level transient spectroscopy (DLTS), or Hall effect, that are able to detect and characterize band gap states do not reveal direct information about their microscopic origin. To overcome this chemical "blindness", the present approach is to use radioactive isotopes as a tracer. Moreover, the recoil energies involved in $\\beta$ and $\\gamma$-decays can be used to create intrinsic isolated point defects (interstitials, vacancies) in a controlled way. A microscopic insight into the structure and the thermodynamic properties of complexes formed by interacting defects can be gained by detecting the hyperfine interaction between the nuclear moments of radioactive dopants and the electromagnetic fields present at the site of the radioactive nucleus. The understanding and the co...

  13. Final disposal of high-level radioactive waste in deep boreholes. An evaluation based on recent research on the bedrock at great depths

    International Nuclear Information System (INIS)

    Aahaell, Karl-Inge

    2006-05-01

    New knowledge in hydrogeology and boring technology have opened the possibility to use deep boreholes as a repository for the Swedish high-level radioactive wastes. The determining property is that the repository can be housed in the stable bedrock at levels where the ground water has no contact with the biosphere and disposal and sealing can take place without disturbing the ground water stratification outside the disposal area. An advantage compared to a shallow repository of KBS-3 type, that is now being planned in Sweden, is that a borehole repository is likely to be technologically more robust, since the concept 'deep boreholes' seems to admit such a deep disposal that the entire disposal area would be surrounded by stable density-layered ground water, while a KBS-3 repository would be surrounded by moving ground water in contact with level close to the surface. This hydrological difference is of great importance for the safety in scenarios with leaching of radioactive substances. A deep repository is also less vulnerable for effects from natural events such as glaciation and earthquakes as well as from technological mishaps and terrorist actions. A crucial factor is, however, that the radioactive waste can be disposed of, in a secure way, at the intended depth, which will require new research and technology development

  14. Ultrasonic determination of the size of defects

    International Nuclear Information System (INIS)

    Zetterwall, T.

    1989-01-01

    The paper presents results from a study of ultrasonic testing of materials. The main topic has been the determination of the size, length and deep, of cracks or defects in stainless steel plates. (K.A.E)

  15. The potential of natural analogues in assessing systems for deep disposal of high-level radioactive waste

    International Nuclear Information System (INIS)

    Chapman, N.A.; McKinley, I.G.; Smellie, J.A.T.

    1984-08-01

    Many of the processes which will lead to the breakdown of engineered barriers and the mobilization of radionuclides in a deep waste repository have analogies in natural geological systems. These 'natural analogues' are seen as a particularly important means of validating predictive models, under the broad heading of radionuclide migration, which are used in long-term safety analyses. Their principal value is the opportunity they provide to examine processes occurring over geological timescales, hence allowing more confident extrapolation of short timescales experimental data. This report begins by reviewing the processes leading to breakdown of containment in a high-level radioactive waste repository in crystalline bedrock and the subsequent migration mechanisms for radionuclides back to the biosphere. Nine specific processes are identified as being of the most significance in migration models, based on available sensitivity analyses. These processes are considered separately in detail, reviewing first the mechanisms involved and the most important unknown then the types of natural analogue which could most usefully provide supporting evidence for the effects of the process. Conclusions are drawn, for each process as to the extent to which analogues validate current predictions on scale and effect, longevity of function, etc. Where possible, quantitative evaluations are given, derived from analogue studies. A summary is provided of the conclusions for each process, and the most important topics for further studies are listed. Specific examples of these requisite analogues are given. The report emphasises throughout the importance of linking analogues to well defined processes, concluding that analogues of complete disposal systems do not exist. The results are seen to be widely applicable. A considerable amount of the information reviewed and presented could be used in the assessment of disposal of other waste types in other host rocks. (Author)

  16. Automatic abdominal multi-organ segmentation using deep convolutional neural network and time-implicit level sets.

    Science.gov (United States)

    Hu, Peijun; Wu, Fa; Peng, Jialin; Bao, Yuanyuan; Chen, Feng; Kong, Dexing

    2017-03-01

    Multi-organ segmentation from CT images is an essential step for computer-aided diagnosis and surgery planning. However, manual delineation of the organs by radiologists is tedious, time-consuming and poorly reproducible. Therefore, we propose a fully automatic method for the segmentation of multiple organs from three-dimensional abdominal CT images. The proposed method employs deep fully convolutional neural networks (CNNs) for organ detection and segmentation, which is further refined by a time-implicit multi-phase evolution method. Firstly, a 3D CNN is trained to automatically localize and delineate the organs of interest with a probability prediction map. The learned probability map provides both subject-specific spatial priors and initialization for subsequent fine segmentation. Then, for the refinement of the multi-organ segmentation, image intensity models, probability priors as well as a disjoint region constraint are incorporated into an unified energy functional. Finally, a novel time-implicit multi-phase level-set algorithm is utilized to efficiently optimize the proposed energy functional model. Our method has been evaluated on 140 abdominal CT scans for the segmentation of four organs (liver, spleen and both kidneys). With respect to the ground truth, average Dice overlap ratios for the liver, spleen and both kidneys are 96.0, 94.2 and 95.4%, respectively, and average symmetric surface distance is less than 1.3 mm for all the segmented organs. The computation time for a CT volume is 125 s in average. The achieved accuracy compares well to state-of-the-art methods with much higher efficiency. A fully automatic method for multi-organ segmentation from abdominal CT images was developed and evaluated. The results demonstrated its potential in clinical usage with high effectiveness, robustness and efficiency.

  17. Radiation damage in silicon. Defect analysis and detector properties

    International Nuclear Information System (INIS)

    Hoenniger, F.

    2008-01-01

    Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after γ-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO i , C i O i , C i C s , VP or V 2 several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO 2 defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep acceptor, a model has been introduced to

  18. Radiation damage in silicon. Defect analysis and detector properties

    Energy Technology Data Exchange (ETDEWEB)

    Hoenniger, F.

    2008-01-15

    Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after {gamma}-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO{sub i}, C{sub i}O{sub i}, C{sub i}C{sub s}, VP or V{sub 2} several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO{sub 2} defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep

  19. Persistent photocurrent and deep level traps in PLD-grown In-Ga-Zn-O thin films studied by thermally stimulated current spectroscopy

    Science.gov (United States)

    Wang, Buguo; Anders, Jason; Leedy, Kevin; Schuette, Michael; Look, David

    2018-02-01

    InGaZnO (IGZO) is a promising semiconductor material for thin-film transistors (TFTs) used in DC and RF switching applications, especially since it can be grown at low temperatures on a wide variety of substrates. Enhancement-mode TFTs based on IGZO thin films grown by pulsed laser deposition (PLD) have been recently fabricated and these transistors show excellent performance; however, compositional variations and defects can adversely affect film quality, especially in regard to electrical properties. In this study, we use thermally stimulated current (TSC) spectroscopy to characterize the electrical properties and the deep traps in PLD-grown IGZO thin films. It was found that the as-grown sample has a DC activation energy of 0.62 eV, and two major traps with activation energies at 0.16-0.26 eV and at 0.90 eV. However, a strong persistent photocurrent (PPC) sometimes exists in the as-grown sample, so we carry out post-growth annealing in an attempt to mitigate the effect. It was found that annealing in argon increases the conduction, produces more PPC and also makes more traps observable. Annealing in air makes the film more resistive, and removes PPC and all traps but one. This work demonstrates that current-based trap emission, such as that associated with the TSC, can effectively reveal electronic defects in highlyresistive semiconductor materials, especially those are not amenable to capacitance-based techniques, such as deeplevel transient spectroscopy (DLTS).

  20. Large-Signal Injection-Level Spectroscopy of Impurities in Silicon

    International Nuclear Information System (INIS)

    Ahrenkiel, R.K.; Johnston, S.W.

    1998-01-01

    Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to an ultra-pure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model

  1. Composition Related Electrical Active Defect States of InGaAs and GaAsN

    Directory of Open Access Journals (Sweden)

    Arpad Kosa

    2017-01-01

    Full Text Available This paper discusses results of electrically active defect states - deep energy level analysis in InGaAs and GaAsN undoped semiconductor structures grown for solar cell applications. Main attention is focused on composition and growth condition dependent impurities and the investigation of their possible origins. For this purpose a widely utilized spectroscopy method, Deep Level Transient Fourier Spectroscopy, was utilized. The most significant responses of each sample labelled as InG2, InG3 and NG1, NG2 were discussed in detail and confirmed by simulations and literature data. The presence of a possible dual conduction type and dual state defect complex, dependent on the In/N composition, is reported. Beneficial characteristics of specific indium and nitrogen concentrations capable of eliminating or reducing certain point defects and dislocations are stated.

  2. Proton irradiation induced defects in Cd and Zn doped InP

    International Nuclear Information System (INIS)

    Rybicki, G.C.; Williams, W.S.

    1993-01-01

    Proton irradiation induced defects in Zn and Cd doped InP have been studied by deep level transient spectroscopy, (DLTS). After 2 MeV proton irradiation the defects H4 and H5 were observed in lightly Zn doped InP, while the defects H3 and H5 were observed in more heavily Zn and Cd doped InP. The defect properties were not affected by the substitution of Cd for Zn, but the introduction rate of H5 was lower in Cd doped InP. The annealing rate of defects was also higher in Cd doped InP. The use of Cd doped InP may thus result in an InP solar cell with even greater radiation resistance

  3. E-beam irradiation effect on CdSe/ZnSe QD formation by MBE: deep level transient spectroscopy and cathodoluminescence studies

    International Nuclear Information System (INIS)

    Kozlovsky, V I; Litvinov, V G; Sadofyev, Yu G

    2004-01-01

    CdSe/ZnSe structures containing 1 or 15 thin (3-5 monolayers) CdSe layers were studied by cathodoluminescence (CL) and deep level transient spectroscopy (DLTS). The DLTS spectra consisted of peaks from deep levels (DLs) and an additional intense peak due to electron emission from the ground quantized level in the CdSe layers. Activation energy of this additional peak correlated with an energy of the CdSe-layer emission line in the CL spectra. Electron-beam irradiation of the structure during the growth process was found to influence the DLTS and CL spectra of the CdSe layers, shifting the CdSe-layer emission line to the long-wave side. The obtained results are explained using the assumption that e-beam irradiation stimulates the formation of quantum dots of various sizes in the CdSe layers

  4. Deep bore well water level fluctuations in the Koyna region, India: the presence of a low order dynamical system in a seismically active environment

    Directory of Open Access Journals (Sweden)

    D. V. Ramana

    2009-05-01

    Full Text Available Water level fluctuations in deep bore wells in the vicinity of seismically active Koyna region in western India provides an opportunity to understand the causative mechanism underlying reservoir-triggered earthquakes. As the crustal porous rocks behave nonlinearly, their characteristics can be obtained by analysing water level fluctuations, which reflect an integrated response of the medium. A Fractal dimension is one such measure of nonlinear characteristics of porous rock as observed in water level data from the Koyna region. It is inferred in our study that a low nonlinear dynamical system with three variables can predict the water level fluctuations in bore wells.

  5. Different defect levels configurations between double layers of nanorods and film in ZnO grown on c-Al2O3 by MOCVD

    International Nuclear Information System (INIS)

    Wu, Bin; Zhang, Yuantao; Shi, Zhifeng; Li, Xiang; Cui, Xijun; Zhuang, Shiwei; Zhang, Baolin; Du, Guotong

    2014-01-01

    Epitaxial ZnO structures with inherent two layers of nanorods layer on film layer were fabricated on c-Al 2 O 3 by metal-organic chemical vapor deposition (MOCVD) and studied by photoluminescence. Specially, photoluminescence spectra for the film layer were obtained by rendering the excitation from the substrate side. Different defect levels configurations between nanorods and film were revealed. Zinc vacancies tend to form in top nanorods layer, whereas abundant zinc–oxygen divacancies accumulate in bottom film layer. An acceptor state with activation energy of ∼200 meV is exclusive to the film layer. The stacking fault related acceptor and Al introduced donor are present in both layers. Besides, two other defect related donors contained in the nanorods layer perhaps also exist within the film layer. - Highlights: • Inherent double layer ZnO of nanorods on film layer were studied by PL. • V Zn tend to form in the nanorods layer, and V ZnO accumulate in the film layer. • An acceptor with activation energy of ∼200 meV is exclusive to the film layer. • Pure NBE emission without DLE in RT PL spectrum does not mean good crystallinity

  6. Strong compensation hinders the p-type doping of ZnO: a glance over surface defect levels

    Science.gov (United States)

    Huang, B.

    2016-07-01

    We propose a surface doping model of ZnO to elucidate the p-type doping and compensations in ZnO nanomaterials. With an N-dopant, the effects of N on the ZnO surface demonstrate a relatively shallow acceptor level in the band gap. As the dimension of the ZnO materials decreases, the quantum confinement effects will increase and render the charge transfer on surface to influence the shifting of Fermi level, by evidence of transition level changes of the N-dopant. We report that this can overwhelm the intrinsic p-type conductivity and transport of the ZnO bulk system. This may provide a possible route of using surface doping to modify the electronic transport and conductivity of ZnO nanomaterials.

  7. Treatment of osteochondral defects of the talus

    NARCIS (Netherlands)

    van Bergen, C. J. A.; de Leeuw, P. A. J.; van Dijk, C. N.

    2008-01-01

    This review article provides a current concepts overview of osteochondral defects of the talus, with special emphasis on treatment options, their indications and future developments. Osteochondral defects of the talar dome are mostly caused by a traumatic event. They may lead to deep ankle pain on

  8. Hydrogen interaction with radiation defects in p-type silicon

    CERN Document Server

    Feklisova, O V; Yakimov, E B; Weber, J

    2001-01-01

    Hydrogen interaction with radiation defects in p-type silicon has been investigated by deep-level non-stationary spectroscopy. Hydrogen is introduced into the high-energy electron-irradiated crystals under chemical etching in acid solutions at room temperature followed by the reverse-bias annealing at 380 K. It is observed that passivation of the irradiation-induced defects is accompanied by formation of novel electrically active defects with hydrogen-related profiles. Effect of hydrogen on the electrical activity of the C sub s C sub i complexes is shown for the first time. Based on the spatial distribution and passivation kinetics, possible nature of the novel complexes is analyzed. The radii for hydrogen capture by vacancies, K-centers, C sub s C sub i centers and the novel complexes are determined

  9. Defects and defect processes in nonmetallic solids

    CERN Document Server

    Hayes, W

    2004-01-01

    This extensive survey covers defects in nonmetals, emphasizing point defects and point-defect processes. It encompasses electronic, vibrational, and optical properties of defective solids, plus dislocations and grain boundaries. 1985 edition.

  10. Hydrogeologic modelling in support of a proposed deep geologic repository in Canada for low and intermediate level radioactive waste - 16264

    International Nuclear Information System (INIS)

    Sykes, Jonathan F.; Normani, Stefano D.; Yin, Yong; Sykes, Eric A.; Jensen, Mark R.

    2009-01-01

    A Deep Geologic Repository (DGR) for Low and Intermediate Level radioactive waste has been proposed by Ontario Power Generation for the Bruce Nuclear Power Development site in Ontario, Canada. The DGR is to be constructed at a depth of about 680 m below ground surface within the argillaceous Ordovician limestone of the Cobourg Formation. This paper describes a regional-scale geologic conceptual model for the DGR site and analyzes flow system evolution using the FRAC3DVSOPG flow and transport model. This provides a framework for the assembly and integration of site-specific geo-scientific data that explains and illustrates the factors that influence the predicted long-term performance of the geosphere barrier. In the geologic framework of the Province of Ontario, the Bruce DGR is located at the eastern edge of the Michigan Basin. Borehole logs covering Southern Ontario combined with site specific data have been used to define the structural contours at the regional and site scale of the 31 sedimentary strata that may be present above the Precambrian crystalline basement rock. The regional-scale domain encompasses an 18.500 km 2 region extending from Lake Huron to Georgian Bay. The groundwater zone below the Devonian is characterized by units containing stagnant water having high concentrations of total dissolved solids that can exceed 300 g/l. The computational sequence involves the calculation of steady-state density independent flow that is used as the initial condition for the determination of pseudo-equilibrium for a density dependent flow system that has an initial TDS distribution developed from observed data. Long-term simulations that consider future glaciation scenarios include the impact of ice thickness and permafrost. The selection of the performance measure used to evaluate a groundwater system is important. The traditional metric of average water particle travel time is inappropriate for geologic units such as the Ordovician where solute transport is

  11. Thermophysical spectroscopy of defect states in silicon

    International Nuclear Information System (INIS)

    Igamberdyev, Kh.T.; Mamadalimov, A.T.; Khabibullaev, P.K.

    1989-01-01

    The present work deals with analyzing the possibilities of using the non-traditional thermophysical methods to study a defect structure in silicon. For this purpose, the temperature dependences of thermophysical properties of defect silicon are investigated. A number of new, earlier unknown physical phenomena in silicon are obtained, and their interpretation has enabled one to establish the main physical mechanisms of formation of deep defect states in silicon

  12. Final deposition of high-level nuclear waste in very deep boreholes. An evaluation based on recent research of bedrock conditions at great depths

    International Nuclear Information System (INIS)

    Aahaell, Karl-Inge

    2007-01-01

    This report evaluates the feasibility of very deep borehole disposal of high-level nuclear waste, e.g., spent nuclear fuel, in the light of recent technological developments and research on the characteristics of bedrock at extreme depths. The evaluation finds that new knowledge in the field of hydrogeology and technical advances in drilling technology have advanced the possibility of using very deep boreholes (3-5 km) for disposal of the Swedish nuclear waste. Decisive factors are (1) that the repository can be located in stable bedrock at a level where the groundwater is isolated from the biosphere, and (2) that the waste can be deposited and the boreholes permanently sealed without causing long-term disturbances in the density-stratification of the groundwater that surrounds the repository. Very deep borehole disposal might offer important advantage compared to the relatively more shallow KBS approach that is presently planned to be used by the Swedish nuclear industry in Sweden, in that it has the potential of being more robust. The reason for this is that very deep borehole disposal appears to permit emplacement of the waste at depths where the entire repository zone would be surrounded by stable, density-stratified groundwater having no contact with the surface, whereas a KBS-3 repository would be surrounded by upwardly mobile groundwater. This hydro-geological difference is a major safety factor, which is particularly apparent in all scenarios that envisage leakage of radioactive substances. Another advantage of a repository at a depth of 3 to 5 km is that it is less vulnerable to impacts from expected events (e.g., changes in groundwater conditions during future ice ages) as well as undesired events (e.g. such as terrorist actions, technical malfunction and major local earthquakes). Decisive for the feasibility of a repository based on the very deep borehole concept is, however, the ability to emplace the waste without failures. In order to achieve this

  13. Direct observation and measurements of neutron induced deep levels responsible for N{sub eff} changes in high resistivity silicon detectors using TCT

    Energy Technology Data Exchange (ETDEWEB)

    Li, Z.; Li, C.J. [Brookhaven National Lab., Upton, NY (United States); Eremin, V.; Verbitskaya, E. [AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.

    1996-03-01

    Neutron induced deep levels responsible for changes of space charge concentration {ital N{sub eff}} in high resistivity silicon detectors have been observed directly using the transient current technique (TCT). It has been observed by TCT that the absolute value and sign of {ital N{sub eff}} experience changes due to the trapping of non- equilibrium free carriers generated near the surface (about 5 micrometers depth into the silicon) by short wavelength laser pulses in fully depleted detectors. Electron trapping causes {ital N{sub eff}} to change toward negative direction (or more acceptor-like space charges) and hole trapping causes {ital N{sub eff}} to change toward positive direction (or more donor-like space charges). The specific temperature associated with these {ital N{sub eff}} changes are those of the frozen-up temperatures for carrier emission of the corresponding deep levels. The carrier capture cross sections of various deep levels have been measured directly using different free carrier injection schemes. 10 refs., 12 figs., 3 tabs.

  14. Levels of PAH-DNA adducts in cord blood and cord tissue and the risk of fetal neural tube defects in a Chinese population.

    Science.gov (United States)

    Yi, Deqing; Yuan, Yue; Jin, Lei; Zhou, Guodong; Zhu, Huiping; Finnell, Richard H; Ren, Aiguo

    2015-01-01

    Maternal exposure to polycyclic aromatic hydrocarbons (PAHs) has been shown to be associated with an elevated risk for neural tube defects (NTDs). In the human body, PAHs are bioactivated and the resultant reactive epoxides can covalently bind to DNA to form PAH-DNA adducts, which may, in turn, cause transcription errors, changes in gene expression or altered patterns of apoptosis. During critical developmental phases, these changes can result in abnormal morphogenesis. We aimed to examine the relationship between the levels of PAH-DNA adducts in cord blood and cord tissue and the risk of NTDs. From 2010 to 2012, 60 NTD cases and 60 healthy controls were recruited from a population-based birth defects surveillance system in five counties of Shanxi Province in Northern China, where the emission of PAHs remains one of the highest in the country and PAHs exposure is highly prevalent. PAH-DNA adducts in cord blood of 15 NTD cases and 15 control infants, and in cord tissue of 60 NTD cases and 60 control infants were measured using the (32)P-postlabeling method. PAH-DNA adduct levels in cord blood tend to be higher in the NTD group (28.5 per 10(8) nucleotides) compared with controls (19.7 per 10(8) nucleotides), although the difference was not statistically significant (P=0.377). PAH-DNA adducts in cord tissue were significantly higher in the NTD group (24.6 per 10(6) nucleotides) than in the control group (15.3 per 10(6) nucleotides), P=0.010. A positive dose-response relationship was found between levels of PAH-DNA adducts in cord tissue and the risk of NTDs (P=0.009). When the lowest tertile was used as the referent and potential confounding factors were adjusted for, a 1.03-fold (95% CI, 0.37-2.89) and 2.96-fold (95% CI, 1.16-7.58) increase in the risk of NTDs was observed for fetuses whose cord tissue PAH-DNA adduct levels were in the second and highest tertile, respectively. High levels of PAH-DNA adducts in fetal tissues were associated with increased risks of

  15. Deep circulation in the Indian and Pacific Oceans and its implication for the dumping of low-level radioactive waste

    International Nuclear Information System (INIS)

    Harries, J.R.

    1980-06-01

    The complexity of ocean transport processes has meant that the limits for the dumping of low-activity radioactive wastes have had to be based on very simplified models of the oceans. This report discusses the models used to determine dumping limits and contrasts them with the known ocean circulation patterns. The deep circulations of the Indian and Pacific Oceans are reviewed to provide a basis for estimating the possible destinations and likely transit times for dissolved material released at the ocean floor

  16. Defect characterization in high-purity silicon after γ- and hadron irradiation

    International Nuclear Information System (INIS)

    Stahl, J.

    2004-07-01

    The challenge for silicon particle detectors in future high energy physics experiments caused by extreme radiation fields can only be met by an appropriate defect engineering of the starting material. Appreciable improvements had already been obtained by enriching high resistivity float zone silicon with oxygen as demonstrated by the CERN RD48 collaboration. This thesis will focus on the difference observed after irradiation between standard and oxygenated float zone and detector grade Czochralski silicon. Results obtained with diodes manufactured on epitaxial layers are also included, envisioning effects arising from the possible migration of impurities during the crystal growth from the oxygen rich Czochralski substrate. Deep level transient spectroscopy (DLTS) and thermally stimulated current (TSC) measurements have been performed for defect characterization after γ- and hadron irradiation. Also a new high resolution DLTS technique has been used for the first time to separate defect levels with similar parameters. During the microscopic studies additionally to the well known defects like VO i , V 2 , C i O i or VP, four new radiation induced defects have been discovered and characterized. Two of these defects are closely correlated with the detector performance: A deep acceptor labeled as I-defect, and a bistable donor (BD). The formation of the I-defect is strongly suppressed in oxygen rich materials, while the formation of the BD is suppressed in oxygen lean material. With their properties the I- and the BD-defect are able to explain the different macroscopic behavior of standard and oxygen enriched float zone silicon after γ-irradiation. Furthermore, the BD defect is most probably responsible for the observation that in Cz and Epi diodes space charge sign inversion does not occur even after high fluences of proton irradiation. Additionally the γ-irradiated diodes were annealed at temperatures between 100 C and 350 C. During these studies some new reaction

  17. Defect properties of CuCrO2: A density functional theory calculation

    International Nuclear Information System (INIS)

    Fang Zhi-Jie; Zhu Ji-Zhen; Zhou Jiang; Mo Man

    2012-01-01

    Using the first-principles methods, we study the formation energetics properties of intrinsic defects, and the charge doping properties of extrinsic defects in transparent conducting oxides CuCrO 2 . Intrinsic defects, some typical acceptor-type, and donor-type extrinsic defects in their relevant charge state are considered. By systematically calculating the formation energies and transition energy, the results of calculation show that, V Cu , O i , and O Cu are the relevant intrinsic defects in CuCrO 2 ; among these intrinsic defects, V Cu is the most efficient acceptor in CuCrO 2 . It is found that all the donor-type extrinsic defects have difficulty in inducing n-conductivity in CuCrO 2 because of their deep transition energy level. For all the acceptor-type extrinsic defects, substituting Mg for Cr is the most prominent doping acceptor with relative shallow transition energy levels in CuCrO 2 . Our calculation results are expected to be a guide for preparing promising n-type and p-type materials in CuCrO 2 . (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. Feasibility of disposal of high-level radioactive waste into the seabed. volume 7: Review of laboratory investigations of radionuclide migration through deep-sea sediments

    International Nuclear Information System (INIS)

    Brush, L.H.

    1988-01-01

    One of the options suggested for disposal of high-level radioactive waste resulting from the generation of nuclear power is burial beneath the deep ocean floor in geologically stable sediment formations which have no economic value. The 8-volume series provides an assessment of the technical feasibility and radiological safety of this disposal concept based on the results obtained by ten years of co-operation and information exchange among the Member countries participating in the NEA Seabed Working Group. This volume contains a review of the laboratory investigations of radionuclide migration through deep-sea sediments. In addition, it discusses the data selected for the radiological assessment, on the basis of both field and laboratory studies

  19. Feasibility of disposal of high-level radioactive waste into the seabed. Volume 6: Deep-sea biology, biological processes and radiobiology

    International Nuclear Information System (INIS)

    Pentreath, R.J.; Hargrave, B.T.; Roe, H.S.J.; Sibuet, M.

    1988-01-01

    One of the options suggested for disposal of high-level radioactive waste resulting from the generation of nuclear power is burial beneath the deep ocean floor in geologically stable sediment formations which have no economic value. The 8-volume series provides an assessment of the technical feasibility and radiological safety of this disposal concept based on the results obtained by ten years of co-operation and information exchange among the Member countries participating in the NEA Seabed Working Group. This report summarizes the biological description of selected sites, the means by which radionuclides could result in human exposure via seafood pathways, and the doses likely to be received by, and effects on, the deep-sea fauna

  20. Defect-Tolerant Monolayer Transition Metal Dichalcogenides

    DEFF Research Database (Denmark)

    Pandey, Mohnish; Rasmussen, Filip Anselm; Kuhar, Korina

    2016-01-01

    Localized electronic states formed inside the band gap of a semiconductor due to crystal defects can be detrimental to the material's optoelectronic properties. Semiconductors with a lower tendency to form defect induced deep gap states are termed defect-tolerant. Here we provide a systematic first...... the gap. These ideas are made quantitative by introducing a descriptor that measures the degree of similarity of the conduction and valence band manifolds. Finally, the study is generalized to nonpolar nanoribbons of the TMDs where we find that only the defect sensitive materials form edge states within......-principles investigation of defect tolerance in 29 monolayer transition metal dichalcogenides (TMDs) of interest for nanoscale optoelectronics. We find that the TMDs based on group VI and X metals form deep gap states upon creation of a chalcogen (S, Se, Te) vacancy, while the TMDs based on group IV metals form only...

  1. Control of environmental impact of low-level aqueous fuel reprocessing wastes by deep-well disposal

    International Nuclear Information System (INIS)

    Trevorrow, L.E.; Steindler, M.J.

    1978-01-01

    The following conclusions are made: (1) the technology and much experience for this disposal method are available; (2) large areas of the U.S. offer geological formations suitable for deep well disposal, but substantial effort may be required in the choice of a specific site; (3) although costs are substantial, they are small compared to associated environmental and energy benefits; (4) impacts on water consumers would be minimized through regulatory checks of siting, construction, and monitoring, and also through natural dilution and radioactive decay; (5) disposal wells must satisfy regulations, of recently-increased stringency, on siting, design, construction, operation, monitoring, and decommissioning

  2. Development of an assessment methodology for the disposal of high-level radioactive waste into deep ocean sediments

    International Nuclear Information System (INIS)

    Murray, C.N.; Stanners, D.A.

    1982-01-01

    This paper presents the results of a theoretical study concerning the option of disposal of vitrified high activity waste (HAW) into deep ocean sediments. The development of a preliminary methodology is presented which concerns the assessment of the possible effects of a release of radioactivity on the ecosystem and eventually on man. As the long-term hazard is considered basically to be due to transuranic elements (and daughter products) the period studied for the assessment is from 10 3 to 10 6 years. A simple ecosystem model is developed so that the transfer of activity between different compartments of the systems, e.g. the sediment column, sediment-water interface, deep sea water column, can be estimated. A critical pathway analysis is made for an imaginary critical group in order to complete the assessment. A sensitivity analysis is undertaken using the computed minimum-maximum credible values for the different parameters used in the calculations in order to obtain a minimum-maximum dose range for a critical group. (Auth.)

  3. Influence of radiation induced defect clusters on silicon particle detectors

    Energy Technology Data Exchange (ETDEWEB)

    Junkes, Alexandra

    2011-10-15

    The Large Hadron Collider (LHC) at the European Organization for Nuclear Research (CERN) addresses some of today's most fundamental questions of particle physics, like the existence of the Higgs boson and supersymmetry. Two large general-purpose experiments (ATLAS, CMS) are installed to detect the products of high energy protonproton and nucleon-nucleon collisions. Silicon detectors are largely employed in the innermost region, the tracking area of the experiments. The proven technology and large scale availability make them the favorite choice. Within the framework of the LHC upgrade to the high-luminosity LHC, the luminosity will be increased to L=10{sup 35} cm{sup -2}s{sup -1}. In particular the pixel sensors in the innermost layers of the silicon trackers will be exposed to an extremely intense radiation field of mainly hadronic particles with fluences of up to {phi}{sub eq}=10{sup 16} cm{sup -2}. The radiation induced bulk damage in silicon sensors will lead to a severe degradation of the performance during their operational time. This work focusses on the improvement of the radiation tolerance of silicon materials (Float Zone, Magnetic Czochralski, epitaxial silicon) based on the evaluation of radiation induced defects in the silicon lattice using the Deep Level Transient Spectroscopy and the Thermally Stimulated Current methods. It reveals the outstanding role of extended defects (clusters) on the degradation of sensor properties after hadron irradiation in contrast to previous works that treated effects as caused by point defects. It has been found that two cluster related defects are responsible for the main generation of leakage current, the E5 defects with a level in the band gap at E{sub C}-0.460 eV and E205a at E{sub C}-0.395 eV where E{sub C} is the energy of the edge of the conduction band. The E5 defect can be assigned to the tri-vacancy (V{sub 3}) defect. Furthermore, isochronal annealing experiments have shown that the V{sub 3} defect

  4. Influence of radiation induced defect clusters on silicon particle detectors

    International Nuclear Information System (INIS)

    Junkes, Alexandra

    2011-10-01

    The Large Hadron Collider (LHC) at the European Organization for Nuclear Research (CERN) addresses some of today's most fundamental questions of particle physics, like the existence of the Higgs boson and supersymmetry. Two large general-purpose experiments (ATLAS, CMS) are installed to detect the products of high energy protonproton and nucleon-nucleon collisions. Silicon detectors are largely employed in the innermost region, the tracking area of the experiments. The proven technology and large scale availability make them the favorite choice. Within the framework of the LHC upgrade to the high-luminosity LHC, the luminosity will be increased to L=10 35 cm -2 s -1 . In particular the pixel sensors in the innermost layers of the silicon trackers will be exposed to an extremely intense radiation field of mainly hadronic particles with fluences of up to Φ eq =10 16 cm -2 . The radiation induced bulk damage in silicon sensors will lead to a severe degradation of the performance during their operational time. This work focusses on the improvement of the radiation tolerance of silicon materials (Float Zone, Magnetic Czochralski, epitaxial silicon) based on the evaluation of radiation induced defects in the silicon lattice using the Deep Level Transient Spectroscopy and the Thermally Stimulated Current methods. It reveals the outstanding role of extended defects (clusters) on the degradation of sensor properties after hadron irradiation in contrast to previous works that treated effects as caused by point defects. It has been found that two cluster related defects are responsible for the main generation of leakage current, the E5 defects with a level in the band gap at E C -0.460 eV and E205a at E C -0.395 eV where E C is the energy of the edge of the conduction band. The E5 defect can be assigned to the tri-vacancy (V 3 ) defect. Furthermore, isochronal annealing experiments have shown that the V 3 defect exhibits a bistability, as does the leakage current. In oxygen

  5. Annealing study of the electron-irradiation-induced defects H4 and E11 in InP: Defect transformation (H4-E11)→H4'

    International Nuclear Information System (INIS)

    Bretagnon, T.; Bastide, G.; Rouzeyre, M.

    1990-01-01

    Capacitance spectroscopy has been used to study the two dominant deep levels, H 4 and E 11 , produced in InP by low-energy electron irradiation. The annealing rates of H 4 and E 11 in the p-type material are found to be identical, as is also the dependence on free-carrier recombination and on the chemical nature of the acceptor (Cd or Zn). Recombination-enhanced annealing converts these traps to a hole trap H 4 ' , which is not detectable by conventional deep-level transient spectroscopy. Its emission and capture properties are measured and analyzed. The similarity of the creation and annealing behavior of H 4 and E 11 shows that they share a common point defect. Our results lead to the tentative identification of the defect as a phosphorous vacancy-acceptor complex and we show how this may anneal to the H 4 ' center

  6. A reconsideration on deep sea bed disposal of high level radiological wastes. A post-Fukushima reflection on sustainable nuclear energy in Japan

    International Nuclear Information System (INIS)

    Yoshikawa, Hidekazu

    2013-01-01

    The ultimate disposal of high-level radioactive waste (HLW) is a common issue among all nuclear developing countries. However, this becomes especially a hard issue for sustainable nuclear energy in Japan after Fukushima Daiichi accident. In this paper, the difficulty of realizing underground HLW disposal in Japanese islands is first discussed from socio-political aspects. Then, revival of old idea of deep seabed disposal of HLW in Pacific Ocean is proposed as an alternative way of HLW disposal. Although this old idea had been abandoned in the past for the reason that it would violate London Convention which prohibits dumping radioactive wastes in public sea, the author will stress the merit of seabed disposal of HLW deep in Pacific Ocean not only from the view point of more safe and ultimate way of disposing HLWs (both vitrified and spent fuel) than by underground disposal, but also the emergence of new marine project by synergetic collaboration of rare-earth resource exploration from the deep sea floor in Pacific Ocean. (author)

  7. Radiation damage and defect behavior in proton irradiated lithium-counterdoped n/sup +/p silicon solar cells

    International Nuclear Information System (INIS)

    Stupica, J.; Goradia, C.; Swartz, C.K.; Weinberg, I.

    1987-01-01

    Two lithium-counterdoped n/sup +/p silicon solar cells with different lithium concentrations were irradiated by 10 MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the higher radiation resistance. Deep level defects were studied using deep level transient spectroscopy which yielded two defects that were lithium related. Relating the defect energy levels obtained from this study under 10 MeV protons, with an earlier work using 1 MeV electron irradiations shows no correlation of the defect energy levels. There is one marked comparison though. The absence of the boron interstitial-oxygen interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The present results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell

  8. Embedded defects

    International Nuclear Information System (INIS)

    Barriola, M.; Vachaspati, T.; Bucher, M.

    1994-01-01

    We give a prescription for embedding classical solutions and, in particular, topological defects in field theories which are invariant under symmetry groups that are not necessarily simple. After providing examples of embedded defects in field theories based on simple groups, we consider the electroweak model and show that it contains the Z string and a one-parameter family of strings called the W(α) string. It is argued that although the members of this family are gauge equivalent when considered in isolation, each member becomes physically distinct when multistring configurations are considered. We then turn to the issue of stability of embedded defects and demonstrate the instability of a large class of such solutions in the absence of bound states or condensates. The Z string is shown to be unstable for all values of the Higgs boson mass when θ W =π/4. W strings are also shown to be unstable for a large range of parameters. Embedded monopoles suffer from the Brandt-Neri-Coleman instability. Finally, we connect the electroweak string solutions to the sphaleron

  9. Point defect states in Sb-doped germanium

    Energy Technology Data Exchange (ETDEWEB)

    Patel, Neil S., E-mail: neilp@mit.edu; Monmeyran, Corentin, E-mail: comonmey@mit.edu [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States); Agarwal, Anuradha [Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States); Kimerling, Lionel C. [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States); Microphotonics Center, Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)

    2015-10-21

    Defect states in n-type Sb-doped germanium were investigated by deep-level transient spectroscopy. Cobalt-60 gamma rays were used to generate isolated vacancies and interstitials which diffuse and react with impurities in the material to form four defect states (E{sub 37}, E{sub 30}, E{sub 22}, and E{sub 21}) in the upper half of the bandgap. Irradiations at 77 K and 300 K as well as isothermal anneals were performed to characterize the relationships between the four observable defects. E{sub 37} is assigned to the Sb donor-vacancy associate (E-center) and is the only vacancy containing defect giving an estimate of 2 × 10{sup 11 }cm{sup −3} Mrad{sup −1} for the uncorrelated vacancy-interstitial pair introduction rate. The remaining three defect states are interstitial associates and transform among one another. Conversion ratios between E{sub 22}, E{sub 21}, and E{sub 30} indicate that E{sub 22} likely contains two interstitials.

  10. Recombination via point defects and their complexes in solar silicon

    Energy Technology Data Exchange (ETDEWEB)

    Peaker, A.R.; Markevich, V.P.; Hamilton, B. [Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Parada, G.; Dudas, A.; Pap, A. [Semilab, 2 Prielle Kornelia Str, 1117 Budapest (Hungary); Don, E. [Semimetrics, PO Box 36, Kings Langley, Herts WD4 9WB (United Kingdom); Lim, B.; Schmidt, J. [Institute for Solar Energy Research (ISFH) Hamlen, 31860 Emmerthal (Germany); Yu, L.; Yoon, Y.; Rozgonyi, G. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

    2012-10-15

    Electronic grade Czochralski and float zone silicon in the as grown state have a very low concentration of recombination generation centers (typically <10{sup 10} cm{sup -3}). Consequently, in integrated circuit technologies using such material, electrically active inadvertent impurities and structural defects are rarely detectable. The quest for cheap photovoltaic cells has led to the use of less pure silicon, multi-crystalline material, and low cost processing for solar applications. Cells made in this way have significant extrinsic recombination mechanisms. In this paper we review recombination involving defects and impurities in single crystal and in multi-crystalline solar silicon. Our main techniques for this work are recombination lifetime mapping measurements using microwave detected photoconductivity decay and variants of deep level transient spectroscopy (DLTS). In particular, we use Laplace DLTS to distinguish between isolated point defects, small precipitate complexes and decorated extended defects. We compare the behavior of some common metallic contaminants in solar silicon in relation to their effect on carrier lifetime and cell efficiency. Finally, we consider the role of hydrogen passivation in relation to transition metal contaminants, grain boundaries and dislocations. We conclude that recombination via point defects can be significant but in most multi-crystalline material the dominant recombination path is via decorated dislocation clusters within grains with little contribution to the overall recombination from grain boundaries. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Studies of annealing of neutron-produced defects in silicon by transconductance measurements of junction field-effect transistors

    International Nuclear Information System (INIS)

    Tokuda, Y.; Usami, A.

    1978-01-01

    Annealing behavior of neutron-produced defects in silicon was studied by measuring the phase angle theta of the small-signal transconductance of the junction field-effect transistors (JFET's). Three deep levels (N-1, N-2, and N-3 levels) in n-type silicon and two deep levels (P-1 and P-2 levels) in p-type silicon, introduced by irradiation, annealed gradually. Their energy levels and capture cross sections have been already reported by us. Three deep levels (P-3, P-4, and P-5 levels) were observed in annealed p-type silicon in the temperature range 150--300 0 C. For these defects, theta was measured as a function of frequency to obtain the time constant. From the temperature dependence of the time constant, assuming that capture cross sections are independent of temperature, the energy levels of P-3, P-4, and P-5 were estimated to be E/sub v/+0.21, E/sub v/+0.40, and E/sub v/+0.30 eV, respectively. The calculated hole capture cross sections of these levels were 2.2 x 10 -15 , 8.7 x 10 -14 , and 1.2 x 10 -14 cm 2 , respectively. Comparison with other published data was made. It was found that N-3 and P-2 levels corresponded to the divacancy. Furthermore, it seemed that P-3, P-4, and P-5 levels corresponded to the high-order vacancy defects

  12. A Methodology to analyze the biosphere in the assessment of deep geological repositories for high level radioactive waste

    International Nuclear Information System (INIS)

    Pinedo, P.; Smith, G.

    1996-11-01

    This report summarizes the work done and the achievements reached within the R and D Project that IMA/CIEMAT has had with ENRESA during 1993-1995. The overall R and D Project has a wide radiological protection context, but the work reported here relates only to the development of a Methodology for considering the Biosphere sub-system in the assessments of deep geological repositories for high radioactive wastes (HLW). The main areas concerned within the Methodology have to do with the Biosphere structure and morphology in the long-term relevant to deep disposal of HLW: in the contexts of the assessment of these systems, and appropriate modelling of the behaviour of radionuclides released to the biosphere system and with the associated human exposure. This document first provides a review of the past and present international and national concerns about the biosphere modelling and its importance in relation to the definition of safety criteria. A joint ENRESA/ANDRA/IPSN/CIEMAT study about the definition and practical descriptions of the biosphere systems under different climatic states is then summarized. The Methodology developed by IMA/CIEMAT is outlined with an illustration of the way it works. Different steps and procedures are included for a better practical understanding of the software tools developed within the project to support the application of the Methodology. This methodology is widely based on an international working group on ''Reference Biospheres'', part of the BIOMOVS II Project. Specific software developments have been carried out in collaboration with Qunti Sci Itd and with the Polytechnical University of Madrid. (Author)

  13. The evolving UK strategy for the management of intermediate level waste to enable disposal to a deep geological repository - a UKAEA/BNFL/NIREX perspective

    International Nuclear Information System (INIS)

    Wratten, A.J.; Allan, D.F.; Palmer, J.D.

    1996-01-01

    The objective of this paper is to describe the development of BNFL's and UKAEA's strategies for managing Intermediate Level Waste (ILW) against the background of the evolving national strategy. The impact of the loss of the sea disposal route is addressed together with the challenge of designing waste conditioning plants in parallel with the evolving technical specification for the Nirex deep repository. What has been achieved and is Planned in terms of plant provisioning is described, together with the lessons that have been learned in striving to achieve optimum design solutions. (author)

  14. A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps

    Science.gov (United States)

    Fukuda, Koichi; Asai, Hidehiro; Hattori, Junichi; Shimizu, Mitsuaki; Hashizume, Tamotsu

    2018-04-01

    In this study, GaN MOS capacitance-voltage device simulations considering various interface and bulk traps are performed in the transient mode. The simulations explain various features of capacitance-voltage curves, such as plateau, hysteresis, and frequency dispersions, which are commonly observed in measurements of GaN MOS capacitors and arise from complicated combinations of interface and bulk deep-level traps. The objective of the present study is to provide a good theoretical tool to understand the physics of various nonideal measured curves.

  15. Identification of nitrogen- and host-related deep-level traps in n-type GaNAs and their evolution upon annealing

    International Nuclear Information System (INIS)

    Gelczuk, Ł.; Kudrawiec, R.; Henini, M.

    2014-01-01

    Deep level traps in as-grown and annealed n-GaNAs layers (doped with Si) of various nitrogen concentrations (N = 0.2%, 0.4%, 0.8%, and 1.2%) were investigated by deep level transient spectroscopy. In addition, optical properties of GaNAs layers were studied by photoluminescence and contactless electroreflectance. The identification of N- and host-related traps has been performed on the basis of band gap diagram [Kudrawiec, Appl. Phys. Lett. 101, 082109 (2012)], which assumes that the activation energy of electron traps of the same microscopic nature decreases with the rise of nitrogen concentration in accordance with the N-related shift of the conduction band towards trap levels. The application of this diagram has allowed to investigate the evolution of donor traps in GaNAs upon annealing. In general, it was observed that the concentration of N- and host-related traps decreases after annealing and PL improves very significantly. However, it was also observed that some traps are generated due to annealing. It explains why the annealing conditions have to be carefully optimized for this material system.

  16. Deep Vein Thrombosis

    African Journals Online (AJOL)

    OWNER

    Deep Vein Thrombosis: Risk Factors and Prevention in Surgical Patients. Deep Vein ... preventable morbidity and mortality in hospitalized surgical patients. ... the elderly.3,4 It is very rare before the age ... depends on the risk level; therefore an .... but also in the post-operative period. ... is continuing uncertainty regarding.

  17. Defect-driven inhomogeneities in Ni /4H-SiC Schottky barriers

    Science.gov (United States)

    Tumakha, S.; Ewing, D. J.; Porter, L. M.; Wahab, Q.; Ma, X.; Sudharshan, T. S.; Brillson, L. J.

    2005-12-01

    Nanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) of Ni diode arrays on 4H-SiC epitaxial wafers reveals a striking correspondence between deep level defects and electrical transport measurements on a diode-by-diode basis. Current-voltage measurements display both ideal and nonideal diode characteristics due to multiple barriers within individual contacts. Near-interface DRCLS demonstrates the presence of three discrete midgap defect levels with 2.2, 2.45, and 2.65eV emission energies whose concentrations vary on a submicron scale among and within individual diodes, correlating with barrier inhomogeneity. These results also suggest that SiC native defect levels can account for the maximum range of n-type barrier heights.

  18. Photoluminescence as a tool for characterizing point defects in semiconductors

    Science.gov (United States)

    Reshchikov, Michael

    2012-02-01

    Photoluminescence is one of the most powerful tools used to study optically-active point defects in semiconductors, especially in wide-bandgap materials. Gallium nitride (GaN) and zinc oxide (ZnO) have attracted considerable attention in the last two decades due to their prospects in optoelectronics applications, including blue and ultraviolet light-emitting devices. However, in spite of many years of extensive studies and a great number of publications on photoluminescence from GaN and ZnO, only a few defect-related luminescence bands are reliably identified. Among them are the Zn-related blue band in GaN, Cu-related green band and Li-related orange band in ZnO. Numerous suggestions for the identification of other luminescence bands, such as the yellow band in GaN, or green and yellow bands in ZnO, do not stand up under scrutiny. In these conditions, it is important to classify the defect-related luminescence bands and find their unique characteristics. In this presentation, we will review the origin of the major luminescence bands in GaN and ZnO. Through simulations of the temperature and excitation intensity dependences of photoluminescence and by employing phenomenological models we are able to obtain important characteristics of point defects such as carrier capture cross-sections for defects, concentrations of defects, and their charge states. These models are also used to find the absolute internal quantum efficiency of photoluminescence and obtain information about nonradiative defects. Results from photoluminescence measurements will be compared with results of the first-principle calculations, as well as with the experimental data obtained by other techniques such as positron annihilation spectroscopy, deep-level transient spectroscopy, and secondary ion mass spectrometry.

  19. A preliminary study on the suitability of host rocks for deep geological disposal of high level radioactive waste in Korea

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chun Soo; Bae, Dae Seok; Kim, Kyung Su; Park, Byung Yun; Koh, Young Kown

    2000-02-01

    It is expected that the key issues are listed as the disposal concept, reference disposal system and other relevant technical development for the deep geological disposal of HLW in each country. First above all, however, the preferred host rocks should be suggested prior execution of these activities. And, it is desirable to be reviewed and proposed some host rocks representative its country. For the reviewing of host rocks in Korean peninsula, several issues were considered such as the long-term geological stability, fracture system, surface and groundwater system and geochemical characteristics in peninsula. The three rock types such as plutonic rocks, crystalline gneisses and massive volcanic rocks were suggested as the preferred host rocks for the R and D of HLW disposal based on the upper stated information. In the following stages, it is suggested that these preferred host rocks would be made an object of all relevant R and D activities for HLW disposal. And, many references for these geologic medium should be characterized and constructed various technical development for the Korean reference disposal system.

  20. A preliminary study on the suitability of host rocks for deep geological disposal of high level radioactive waste in Korea

    International Nuclear Information System (INIS)

    Kim, Chun Soo; Bae, Dae Seok; Kim, Kyung Su; Park, Byung Yun; Koh, Young Kown

    2000-02-01

    It is expected that the key issues are listed as the disposal concept, reference disposal system and other relevant technical development for the deep geological disposal of HLW in each country. First above all, however, the preferred host rocks should be suggested prior execution of these activities. And, it is desirable to be reviewed and proposed some host rocks representative its country. For the reviewing of host rocks in Korean peninsula, several issues were considered such as the long-term geological stability, fracture system, surface and groundwater system and geochemical characteristics in peninsula. The three rock types such as plutonic rocks, crystalline gneisses and massive volcanic rocks were suggested as the preferred host rocks for the R and D of HLW disposal based on the upper stated information. In the following stages, it is suggested that these preferred host rocks would be made an object of all relevant R and D activities for HLW disposal. And, many references for these geologic medium should be characterized and constructed various technical development for the Korean reference disposal system

  1. Nature of oxygen donors and radiation defects in oxygen-doped germanium

    International Nuclear Information System (INIS)

    Fukuoka, Noboru; Atobe, Kozo; Honda, Makoto; Matsuda, Koji.

    1991-01-01

    The nature of oxygen donors and radiation defects in oxygen-doped germanium were studied through measurements of the infrared absorption spectrum, deep level transient spectroscopy spectrum and carrier concentration. It is revealed that a new donor is not formed in oxygen-doped germanium. An A-center (interstitial oxygen-vacancy pair) forms a complex with a thermal donor in its annealing stage at 60degC-140degC. The introduction rate of defects by 1.5 MeV electron irradiation was enhanced in thermal-donor-doped samples. (author)

  2. Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer

    International Nuclear Information System (INIS)

    Murayama, H.; Akiyama, Y.; Niwa, R.; Sakashita, H.; Sakaki, H.; Kachi, T.; Sugimoto, M.

    2013-01-01

    Time-dependent responses of drain current (I d ) in an AlGaN/GaN HEMT under UV (3.3 eV) and red (2.0 eV) light illumination have been studied at 300 K and 250 K. UV illumination enhances I d by about 10 %, indicating that the density of two-dimensional electrons is raised by about 10 12 cm −2 . When UV light is turned off at 300 K, a part of increased I d decays quickly but the other part of increment is persistent, showing a slow decay. At 250 K, the majority of increment remains persistent. It is found that such a persistent increase of I d at 250 K can be partially erased by the illumination of red light. These photo-responses are explained by a simple band-bending model in which deep levels in the AlGaN barrier get positively charged by the UV light, resulting in a parabolic band bending in the AlGaN layer, while some potion of those deep levels are neutralized by the red light

  3. Toward Intelligent Software Defect Detection

    Science.gov (United States)

    Benson, Markland J.

    2011-01-01

    Source code level software defect detection has gone from state of the art to a software engineering best practice. Automated code analysis tools streamline many of the aspects of formal code inspections but have the drawback of being difficult to construct and either prone to false positives or severely limited in the set of defects that can be detected. Machine learning technology provides the promise of learning software defects by example, easing construction of detectors and broadening the range of defects that can be found. Pinpointing software defects with the same level of granularity as prominent source code analysis tools distinguishes this research from past efforts, which focused on analyzing software engineering metrics data with granularity limited to that of a particular function rather than a line of code.

  4. Defect engineering for 650 nm high-power AlGaInP laser diodes

    International Nuclear Information System (INIS)

    Kim, D.S.; Kim, K.C.; Shin, Y.C.; Kang, D.H.; Kim, B.J.; Kim, Y.M.; Park, Y.; Kim, T.G.

    2006-01-01

    To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 deg. C. The characteristic temperatures (T ) were 212 K for 25-60 deg. C and 106 K over 60 deg. C

  5. Defect formation in heavily doped Si upon irradiation

    International Nuclear Information System (INIS)

    Gubskaya, V.I.; Kuchinskii, P.V.; Lomako, V.M.

    1981-01-01

    The rates of the carrier removal and radiation defect introduction into n- and p-Si in the concentration range of 10 14 to 10 17 cm -3 upon 7-MeV-electron irradiation have been studied. The spectrum of the vacancy-type defects, defining the carrier removal rate in lightly doped crystals has been found. With doping level increase the carrier removal rate grows irrespective of conductivity type, and at n 0 , p 0 > 10 17 cm -3 is close to the total displacement number. At the same time a decrease in the introduction rate of the known vacancy-type defects is observed. x It is shown that a considerable growth of the carrier removal rate is defined neither by introduction of shallow compensating centers, nor by change in the primary defect charge state. It is suggested that at high doping impurity concentrations compensation in Si is due to the introduction of complexes doping impurity-interstitial or (impurity atom-interstitial) + vacancy, which give deep levels. (author)

  6. An investigation of the trade-off between the count level and image quality in myocardial perfusion SPECT using simulated images: the effects of statistical noise and object variability on defect detectability

    International Nuclear Information System (INIS)

    He Xin; Links, Jonathan M; Frey, Eric C

    2010-01-01

    Quantum noise as well as anatomic and uptake variability in patient populations limits observer performance on a defect detection task in myocardial perfusion SPECT (MPS). The goal of this study was to investigate the relative importance of these two effects by varying acquisition time, which determines the count level, and assessing the change in performance on a myocardial perfusion (MP) defect detection task using both mathematical and human observers. We generated ten sets of projections of a simulated patient population with count levels ranging from 1/128 to around 15 times a typical clinical count level to simulate different levels of quantum noise. For the simulated population we modeled variations in patient, heart and defect size, heart orientation and shape, defect location, organ uptake ratio, etc. The projection data were reconstructed using the OS-EM algorithm with no compensation or with attenuation, detector response and scatter compensation (ADS). The images were then post-filtered and reoriented to generate short-axis slices. A channelized Hotelling observer (CHO) was applied to the short-axis images, and the area under the receiver operating characteristics (ROC) curve (AUC) was computed. For each noise level and reconstruction method, we optimized the number of iterations and cutoff frequencies of the Butterworth filter to maximize the AUC. Using the images obtained with the optimal iteration and cutoff frequency and ADS compensation, we performed human observer studies for four count levels to validate the CHO results. Both CHO and human observer studies demonstrated that observer performance was dependent on the relative magnitude of the quantum noise and the patient variation. When the count level was high, the patient variation dominated, and the AUC increased very slowly with changes in the count level for the same level of anatomic variability. When the count level was low, however, quantum noise dominated, and changes in the count level

  7. Unexpected properties of the inductively coupled plasma induced defect in germanium

    Energy Technology Data Exchange (ETDEWEB)

    Coelho, S.M.M., E-mail: sergio@up.ac.za; Auret, F.D.; Janse van Rensburg, P.J.; Nel, J.M.

    2014-04-15

    Inductively coupled plasma (ICP) etching of germanium introduces a single defect, the E{sub 0.31} electron trap, for a large range of argon partial pressures from 4×10{sup –3} to 6.5×10{sup –4} mbar that correspond to ion energies of 8 to 60 eV. Ge of three crystallographic orientations, (1 0 0), (1 1 0) and (1 1 1), treated with 20 and 60 eV ICP had defect concentration profiles that were similar in appearance, with a maximum concentration of 10{sup 14} cm{sup −3} extending more than a µm into the material, approximately three orders of magnitude deeper than what TRIM simulations predicted. All profiles were measured using Laplace deep level transient spectroscopy (L-DLTS), a technique that is sensitive to defect concentrations as low as 10{sup 11} cm{sup −3}. Isochronal annealing of samples showed concentration curves broadening after a 400 K anneal and decreasing to the 10{sup 13} cm{sup −3} level after a 450 K anneal. Unannealed samples measured after a year exhibited similar decreases in defect concentration without broadening of their profiles. A 550 K anneal lowered the defect concentration to levels below the L-DLTS detection limit. Thereafter additional plasma treatment of the surface failed to reintroduce this defect indicating that the structure required for the formation of E{sub 0.31} was no longer present in the region under observation.

  8. Estimating Ground-Level PM2.5 by Fusing Satellite and Station Observations: A Geo-Intelligent Deep Learning Approach

    Science.gov (United States)

    Li, Tongwen; Shen, Huanfeng; Yuan, Qiangqiang; Zhang, Xuechen; Zhang, Liangpei

    2017-12-01

    Fusing satellite observations and station measurements to estimate ground-level PM2.5 is promising for monitoring PM2.5 pollution. A geo-intelligent approach, which incorporates geographical correlation into an intelligent deep learning architecture, is developed to estimate PM2.5. Specifically, it considers geographical distance and spatiotemporally correlated PM2.5 in a deep belief network (denoted as Geoi-DBN). Geoi-DBN can capture the essential features associated with PM2.5 from latent factors. It was trained and tested with data from China in 2015. The results show that Geoi-DBN performs significantly better than the traditional neural network. The out-of-sample cross-validation R2 increases from 0.42 to 0.88, and RMSE decreases from 29.96 to 13.03 μg/m3. On the basis of the derived PM2.5 distribution, it is predicted that over 80% of the Chinese population live in areas with an annual mean PM2.5 of greater than 35 μg/m3. This study provides a new perspective for air pollution monitoring in large geographic regions.

  9. Electrical characterization of defects introduced in n-Si during electron beam deposition of Pt

    Energy Technology Data Exchange (ETDEWEB)

    Auret, F.D.; Coelho, S.M.M.; Nel, J.M.; Meyer, W.E. [Physics Department, University of Pretoria, Pretoria (South Africa)

    2012-10-15

    We have used deep level transient spectroscopy (DLTS) and high resolution DLTS to characterize the defects introduced in epitaxially grown n-type, P-doped, Si during electron beam deposition (EBD) of Pt for Schottky contact formation. The identity of some of these defects could be established by comparing their properties to those of well-known defects introduced by high energy electron irradiation of the same material. The most prominent EBD-induced defects thus identified were the E-center (VP center), the A-center (VO center), interstitial carbon (C{sub i}), and the interstitial carbon-substitutional carbon (C{sub i}C{sub s}) pair. EBD also introduced some defects that were not observed after high energy electron irradiation. DLTS depth profiling revealed that the main defects, VO and VP, could be detected up to 0.5 {mu}m below the metal-Si interface. Shielding the sample from particles originating in the region of the electron beam significantly reduced defect introduction and resulted in Schottky contacts with improved rectification properties. Finally, we have found that exposing the sample to EBD conditions, without actually depositing metal, introduced a different set of electron traps, not introduced by the EBD process. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Use of porous silicon to minimize oxidation induced stacking fault defects in silicon

    International Nuclear Information System (INIS)

    Shieh, S.Y.; Evans, J.W.

    1992-01-01

    This paper presents methods for minimizing stacking fault defects, generated during oxidation of silicon, include damaging the back of the wafer or depositing poly-silicon on the back. In either case a highly defective structure is created and this is capable of gettering either self-interstitials or impurities which promote nucleation of stacking fault defects. A novel method of minimizing these defects is to form a patch of porous silicon on the back of the wafer by electrochemical etching. Annealing under inert gas prior to oxidation may then result in the necessary gettering. Experiments were carried out in which wafers were subjected to this treatment. Subsequent to oxidation, the wafers were etched to remove oxide and reveal defects. The regions of the wafer adjacent to the porous silicon patch were defect-free, whereas remote regions had defects. Deep level transient spectroscopy has been used to examine the gettering capability of porous silicon, and the paper discusses the mechanism by which the porous silicon getters

  11. Arthropod phylogenetics in light of three novel millipede (myriapoda: diplopoda) mitochondrial genomes with comments on the appropriateness of mitochondrial genome sequence data for inferring deep level relationships.

    Science.gov (United States)

    Brewer, Michael S; Swafford, Lynn; Spruill, Chad L; Bond, Jason E

    2013-01-01

    Arthropods are the most diverse group of eukaryotic organisms, but their phylogenetic relationships are poorly understood. Herein, we describe three mitochondrial genomes representing orders of millipedes for which complete genomes had not been characterized. Newly sequenced genomes are combined with existing data to characterize the protein coding regions of myriapods and to attempt to reconstruct the evolutionary relationships within the Myriapoda and Arthropoda. The newly sequenced genomes are similar to previously characterized millipede sequences in terms of synteny and length. Unique translocations occurred within the newly sequenced taxa, including one half of the Appalachioria falcifera genome, which is inverted with respect to other millipede genomes. Across myriapods, amino acid conservation levels are highly dependent on the gene region. Additionally, individual loci varied in the level of amino acid conservation. Overall, most gene regions showed low levels of conservation at many sites. Attempts to reconstruct the evolutionary relationships suffered from questionable relationships and low support values. Analyses of phylogenetic informativeness show the lack of signal deep in the trees (i.e., genes evolve too quickly). As a result, the myriapod tree resembles previously published results but lacks convincing support, and, within the arthropod tree, well established groups were recovered as polyphyletic. The novel genome sequences described herein provide useful genomic information concerning millipede groups that had not been investigated. Taken together with existing sequences, the variety of compositions and evolution of myriapod mitochondrial genomes are shown to be more complex than previously thought. Unfortunately, the use of mitochondrial protein-coding regions in deep arthropod phylogenetics appears problematic, a result consistent with previously published studies. Lack of phylogenetic signal renders the resulting tree topologies as suspect

  12. Arthropod phylogenetics in light of three novel millipede (myriapoda: diplopoda mitochondrial genomes with comments on the appropriateness of mitochondrial genome sequence data for inferring deep level relationships.

    Directory of Open Access Journals (Sweden)

    Michael S Brewer

    Full Text Available BACKGROUND: Arthropods are the most diverse group of eukaryotic organisms, but their phylogenetic relationships are poorly understood. Herein, we describe three mitochondrial genomes representing orders of millipedes for which complete genomes had not been characterized. Newly sequenced genomes are combined with existing data to characterize the protein coding regions of myriapods and to attempt to reconstruct the evolutionary relationships within the Myriapoda and Arthropoda. RESULTS: The newly sequenced genomes are similar to previously characterized millipede sequences in terms of synteny and length. Unique translocations occurred within the newly sequenced taxa, including one half of the Appalachioria falcifera genome, which is inverted with respect to other millipede genomes. Across myriapods, amino acid conservation levels are highly dependent on the gene region. Additionally, individual loci varied in the level of amino acid conservation. Overall, most gene regions showed low levels of conservation at many sites. Attempts to reconstruct the evolutionary relationships suffered from questionable relationships and low support values. Analyses of phylogenetic informativeness show the lack of signal deep in the trees (i.e., genes evolve too quickly. As a result, the myriapod tree resembles previously published results but lacks convincing support, and, within the arthropod tree, well established groups were recovered as polyphyletic. CONCLUSIONS: The novel genome sequences described herein provide useful genomic information concerning millipede groups that had not been investigated. Taken together with existing sequences, the variety of compositions and evolution of myriapod mitochondrial genomes are shown to be more complex than previously thought. Unfortunately, the use of mitochondrial protein-coding regions in deep arthropod phylogenetics appears problematic, a result consistent with previously published studies. Lack of phylogenetic

  13. Investigation of defects in Cu(In,Ga)S{sub 2} and Cu(In,Ga)Se{sub 2} solar cells by space charge spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Riediger, Julia; Ohland, Joerg; Knipper, Martin; Parisi, Juergen; Riedel, Ingo [Thin Film Photovoltaics, Energy- and Semiconductor Research Laboratory, University of Oldenburg, D-26111 Oldenburg (Germany); Meeder, Alexander [Soltecture GmbH, 12487 Berlin (Germany)

    2012-07-01

    If deep defect states in the absorber of a solar cell act as recombination centers, they may limit the carrier lifetime and thus the open circuit voltage. This is related to the defect's activation energy and spatial position. In this study the defect landscape of chalcopyrite thin film solar cells with varied absorber composition was investigated by space charge spectroscopy. The absorber layer in Cu(In,Ga)S{sub 2} samples arises from rapid thermal process (RTP) in sulfur vapor while Cu(In,Ga)Se{sub 2} absorbers were processed via co-evaporation of the constituents. Several defect states were found by deep level spectroscopy (DLTS) and thermal admittance spectroscopy (TAS). With the knowledge of the defect activation energies we derived the spatial defect concentrations from (illuminated) capacitance-voltage (CV) measurements and discuss the results for both material systems. To identify the often discussed ''N1'' defect, the measurements were repeated after annealing and changes in the defect spectra were evaluated.

  14. Radiation damage and defect behavior in proton irradiated lithium-counterdoped n+p silicon solar cells

    Science.gov (United States)

    Stupica, John; Goradia, Chandra; Swartz, Clifford K.; Weinberg, Irving

    1987-01-01

    Two lithium-counterdoped n+p silicon solar cells with different lithium concentrations were irradiated by 10-MeV protons. Cell performance was measured as a function of fluence, and it was found that the cell with the highest concentration of lithium had the highest radiation resistance. Deep level transient spectroscopy which showed two deep level defects that were lithium related. Relating the defect energy levels obtained from this study with those from earlier work using 1-MeV electron irradiation shows no correlation of the defect energy levels. There is one marked similarity: the absence of the boron-interstitial-oxygen-interstitial defect. This consistency strengthens the belief that lithium interacts with oxygen to prevent the formation of the boron interstitial-oxygen interstitial defect. The results indicate that, in general, addition of lithium in small amounts to the p-base of a boron doped silicon solar cell such that the base remains p-type, tends to increase the radiation resistance of the cell.

  15. Holographic Chern-Simons defects

    International Nuclear Information System (INIS)

    Fujita, Mitsutoshi; Melby-Thompson, Charles M.; Meyer, René; Sugimoto, Shigeki

    2016-01-01

    We study SU(N) Yang-Mills-Chern-Simons theory in the presence of defects that shift the Chern-Simons level from a holographic point of view by embedding the system in string theory. The model is a D3-D7 system in Type IIB string theory, whose gravity dual is given by the AdS soliton background with probe D7 branes attaching to the AdS boundary along the defects. We holographically renormalize the free energy of the defect system with sources, from which we obtain the correlation functions for certain operators naturally associated to these defects. We find interesting phase transitions when the separation of the defects as well as the temperature are varied. We also discuss some implications for the Fractional Quantum Hall Effect and for 2-dimensional QCD.

  16. Characterization of point defects in monolayer arsenene

    Science.gov (United States)

    Liang, Xiongyi; Ng, Siu-Pang; Ding, Ning; Wu, Chi-Man Lawrence

    2018-06-01

    Topological defects that are inevitably found in 2D materials can dramatically affect their properties. Using density functional theory (DFT) calculations and ab initio molecular dynamics (AIMD) method, the structural, thermodynamic, electronic and magnetic properties of six types of typical point defects in arsenene, i.e. the Stone-Wales defect, single and double vacancies and adatoms, were systemically studied. It was found that these defects were all more easily generated in arsenene with lower formation energies than those with graphene and silicene. Stone-Wales defects can be transformed from pristine arsenene by overcoming a barrier of 2.19 eV and single vacancy defects tend to coalesce into double vacancy defects by diffusion. However, a type of adatom defect does not exhibit kinetic stability at room temperature. In addition, SV defects and another type of adatom defect can remarkably affect the electronic and magnetic properties of arsenene, e.g. they can introduce localized states near the Fermi level, as well as a strongly local magnetic moment due to dangling bond and unpaired electron. Furthermore, the simulated scanning tunneling microscopy (STM) and Raman spectroscopy were computed and the types of point defects can be fully characterized by correlating the STM images and Raman spectra to the defective atomistic structures. The results provide significant insights to the effect of defects in arsenene for potential applications, as well as identifications of two helpful tools (STM and Raman spectroscopy) to distinguish the type of defects in arsenene for future experiments.

  17. Defects in ZnO, CdTe, and Si: Optical, structural, and electrical characterization

    CERN Multimedia

    Deicher, M; Kronenberg, J; Johnston, K; Roder, J; Byrne, D J

    Electronic and optical properties of semiconductors are extremely sensitive to defects and impurities that have localized electronic states with energy levels in the band gap of the semiconductor. Spectroscopic techniques like photo-luminescence (PL), deep level transient spectroscopy (DLTS), or Hall effect that are able to detect and characterize band gap states do not reveal direct information about their microscopic origin. To overcome this chemical "blindness" radioactive isotopes are used as a tracer. Moreover, the recoil energies involved in ${\\beta}$- and ${\\gamma}$-decays can be used to create intrinsic, isolated point defects (interstitials, vacancies) in a controlled way. A microscopic insight into the structure and the thermodynamic properties of complexes formed by interacting defects can be gained by detecting the hyperfine interaction between the nuclear moments of radioactive dopants and the electromagnetic fields present at the site of the radioactive nucleus. These techniques will be used to...

  18. Interdisciplinary Management of an Isolated Intrabony Defect

    Directory of Open Access Journals (Sweden)

    Sheetal Ghivari

    2014-01-01

    Full Text Available The treatment of intrabony defects is a real challenge in molar teeth as it is chronic, slowly progressing disease which needs timely intervention. Periodontal inflammation associated with intrabony defect is not a separate entity as it secondarily affects the pulp causing retrograde pulpitis. However, treatment of these lesions will be complicated due to extensive bone loss. The tooth was endodontically treated followed by periodontal surgery to eliminate the deep periodontal pocket and promote bone fill in osseous defect. PepGen P-15 composited with platelet rich plasma was utilized for enhancing bone formation. The combination of these graft materials provides synergistic effect on bone regeneration.

  19. Developmental and Post-Eruptive Defects in Molar Enamel of Free-Ranging Eastern Grey Kangaroos (Macropus giganteus Exposed to High Environmental Levels of Fluoride.

    Directory of Open Access Journals (Sweden)

    Uwe Kierdorf

    Full Text Available Dental fluorosis has recently been diagnosed in wild marsupials inhabiting a high-fluoride area in Victoria, Australia. Information on the histopathology of fluorotic marsupial enamel has thus far not been available. This study analyzed the developmental and post-eruptive defects in fluorotic molar enamel of eastern grey kangaroos (Macropus giganteus from the same high-fluoride area using light microscopy and backscattered electron imaging in the scanning electron microscope. The fluorotic enamel exhibited a brownish to blackish discolouration due to post-eruptive infiltration of stains from the oral cavity and was less resistant to wear than normally mineralized enamel of kangaroos from low-fluoride areas. Developmental defects of enamel included enamel hypoplasia and a pronounced hypomineralization of the outer (sub-surface enamel underneath a thin rim of well-mineralized surface enamel. While the hypoplastic defects denote a disturbance of ameloblast function during the secretory stage of amelogenesis, the hypomineralization is attributed to an impairment of enamel maturation. In addition to hypoplastic defects, the fluorotic molars also exhibited numerous post-eruptive enamel defects due to the flaking-off of portions of the outer, hypomineralized enamel layer during mastication. The macroscopic and histopathological lesions in fluorotic enamel of M. giganteus match those previously described for placental mammals. It is therefore concluded that there exist no principal differences in the pathogenic mechanisms of dental fluorosis between marsupial and placental mammals. The regular occurrence of hypomineralized, opaque outer enamel in the teeth of M. giganteus and other macropodids must be considered in the differential diagnosis of dental fluorosis in these species.

  20. Developmental and Post-Eruptive Defects in Molar Enamel of Free-Ranging Eastern Grey Kangaroos (Macropus giganteus) Exposed to High Environmental Levels of Fluoride

    Science.gov (United States)

    Kierdorf, Uwe; Death, Clare; Hufschmid, Jasmin; Witzel, Carsten; Kierdorf, Horst

    2016-01-01

    Dental fluorosis has recently been diagnosed in wild marsupials inhabiting a high-fluoride area in Victoria, Australia. Information on the histopathology of fluorotic marsupial enamel has thus far not been available. This study analyzed the developmental and post-eruptive defects in fluorotic molar enamel of eastern grey kangaroos (Macropus giganteus) from the same high-fluoride area using light microscopy and backscattered electron imaging in the scanning electron microscope. The fluorotic enamel exhibited a brownish to blackish discolouration due to post-eruptive infiltration of stains from the oral cavity and was less resistant to wear than normally mineralized enamel of kangaroos from low-fluoride areas. Developmental defects of enamel included enamel hypoplasia and a pronounced hypomineralization of the outer (sub-surface) enamel underneath a thin rim of well-mineralized surface enamel. While the hypoplastic defects denote a disturbance of ameloblast function during the secretory stage of amelogenesis, the hypomineralization is attributed to an impairment of enamel maturation. In addition to hypoplastic defects, the fluorotic molars also exhibited numerous post-eruptive enamel defects due to the flaking-off of portions of the outer, hypomineralized enamel layer during mastication. The macroscopic and histopathological lesions in fluorotic enamel of M. giganteus match those previously described for placental mammals. It is therefore concluded that there exist no principal differences in the pathogenic mechanisms of dental fluorosis between marsupial and placental mammals. The regular occurrence of hypomineralized, opaque outer enamel in the teeth of M. giganteus and other macropodids must be considered in the differential diagnosis of dental fluorosis in these species. PMID:26895178

  1. The inventory model for feasibility studies of a deep geological disposal for high level and long lived waste

    International Nuclear Information System (INIS)

    Dutzer, M.; Lagrange, M.H.; Porcher, J.B.; Chupeau, J.

    2001-01-01

    A detailed inventory of high level and long lived waste packages was established to perform studies for the feasibility of an underground repository. This inventory takes into account existing conditioned waste, unconditioned waste and arisings generated by existing facilities. Grouping of waste package sorts in package types is done regarding relevant characteristics that determine the design of disposal vaults. The radiological content of each package type is derived from calculations of nuclear interactions inside the reactors, from the distribution of the nuclides in the different package types; it is cross-checked with available data on waste sorts. (author)

  2. [Homocysteine levels and polymorphisms of MTHFR and CBS genes in Colombian patients with superficial and deep venous thrombosis].

    Science.gov (United States)

    Ayala, Claudia; García, Reggie; Cruz, Edith; Prieto, Karol; Bermúdez, Marta

    2010-01-01

    Thrombosis develops when the hemostatic system is incorrectly activated due to the unbalance between procoagulant, anticoagulant and fibrinolytic mechanisms allowing the formation of a clot within a blood vessel. The risk factors of this pathology can be acquired or can be genetic. To analyze in a Colombian population with diagnosis of venous thrombosis, lipid profile, glucose and homocystein levels, to calculate the alleles and genotypic frequencies of polymorphisms c.699 C>T, c.1080 C>T, c.844ins68 of the cystathionine ß synthase and the c.677 C>T of the methylenetetrahydrofolate reductase (MTHFR) genes. Thirty three patients and their controls were studied. The biochemical test was carried out by colorimetric methods and immunoassay. In this survey we used the restriction fragments longitude polymorphism (RLFP) technique to identify the polymorphisms mentioned. The association study was performed through the chi square test. We confirmed that gene alterations increase risk for pathology; we found statistically significant differences in the group with hypercholesterolemia in presence of the polymorphism c.699 C>T in the CBS gene, showing a protective effect in the individuals carrying this genetic variation. Likewise, we found a statistical trend for an eventual protective effect of the CBS c.844ins68 polymorphism to venous thrombotic disease. There were not any statistically significant differences in homocystein levels between cases and controls; nevertheless, the variability in the plasma concentrations was greater in the group of cases.

  3. Transport of a solute pulse through the bentonite barrier of deep geological high-level waste storage facilities in granite

    International Nuclear Information System (INIS)

    Cormenzana Lopez, J.L.; Alonso Diaz-Teran, J.; Gonzalez- Herranz, E.

    1997-01-01

    Spain like Sweden, Finland, Canada and other countries has opted for an open nuclear fuel cycle, and to store the unreprocessed spent fuel in a stable geological formation. Sweden, Finland and Canada have chosen granite rock for their high-level waste storage facilities. Their Performance Assessment of disposal systems have all obtained to the same result. The greatest annual doses are caused by I 129 in the gap between the fuel rods and the cladding. The reference concept for the Spanish high-level waste storage facility in granite provides for final storage in a granite mass at a depth of 500 m in carbon steel capsules in horizontal tunnels surrounded by a bentonite buffer. It the capsule fails due to generalised corrosion, an not giving credit for the cladding, the I 129 and other radionuclides in the gap would pass immediately into the surrounding water. This paper describes the modelling of the transport of the solute through the bentonite around the capsule to determine the fraction that crosses the bentonite each year. It also analyses the sensitivity of the results to the boundary condition adopted and changes in the values of the relevant parameters. (Author)

  4. The Prediction of the Risk Level of Pulmonary Embolism and Deep Vein Thrombosis through Artificial Neural Network.

    Science.gov (United States)

    Agharezaei, Laleh; Agharezaei, Zhila; Nemati, Ali; Bahaadinbeigy, Kambiz; Keynia, Farshid; Baneshi, Mohammad Reza; Iranpour, Abedin; Agharezaei, Moslem

    2016-10-01

    Venous thromboembolism is a common cause of mortality among hospitalized patients and yet it is preventable through detecting the precipitating factors and a prompt diagnosis by specialists. The present study has been carried out in order to assist specialists in the diagnosis and prediction of the risk level of pulmonary embolism in patients, by means of artificial neural network. A number of 31 risk factors have been used in this study in order to evaluate the conditions of 294 patients hospitalized in 3 educational hospitals affiliated with Kerman University of Medical Sciences. Two types of artificial neural networks, namely Feed-Forward Back Propagation and Elman Back Propagation, were compared in this study. Through an optimized artificial neural network model, an accuracy and risk level index of 93.23 percent was achieved and, subsequently, the results have been compared with those obtained from the perfusion scan of the patients. 86.61 percent of high risk patients diagnosed through perfusion scan diagnostic method were also diagnosed correctly through the method proposed in the present study. The results of this study can be a good resource for physicians, medical assistants, and healthcare staff to diagnose high risk patients more precisely and prevent the mortalities. Additionally, expenses and other unnecessary diagnostic methods such as perfusion scans can be efficiently reduced.

  5. The effects of illumination on deep levels observed in as-grown and low-energy electron irradiated high-purity semi-insulating 4H-SiC

    Science.gov (United States)

    Alfieri, G.; Knoll, L.; Kranz, L.; Sundaramoorthy, V.

    2018-05-01

    High-purity semi-insulating 4H-SiC can find a variety of applications, ranging from power electronics to quantum computing applications. However, data on the electronic properties of deep levels in this material are scarce. For this reason, we present a deep level transient spectroscopy study on HPSI 4H-SiC substrates, both as-grown and irradiated with low-energy electrons (to displace only C-atoms). Our investigation reveals the presence of four deep levels with activation energies in the 0.4-0.9 eV range. The concentrations of three of these levels increase by at least one order of magnitude after irradiation. Furthermore, we analyzed the behavior of these traps under sub- and above-band gap illumination. The nature of the traps is discussed in the light of the present data and results reported in the literature.

  6. Revised shallow and deep water-level and storage-volume changes in the Equus Beds Aquifer near Wichita, Kansas, predevelopment to 1993

    Science.gov (United States)

    Hansen, Cristi V.; Lanning-Rush, Jennifer L.; Ziegler, Andrew C.

    2013-01-01

    credits from the Equus Beds aquifer by the city of Wichita. The 1993 water levels correspond to the lowest recorded levels and largest storage declines since 1940. Revised and new water-level maps of shallow and deep layers were developed to better represent the general condition of the aquifer. Only static water levels were used to better represent the general condition of the aquifer and comply with Wichita’s ASR permits. To ensure adequate data density, the January 1993 period was expanded to October 1992 through February 1993. Static 1993 water levels from the deep aquifer layer of the Equus Beds aquifer possibly could be used as the lower baseline for regulatory purposes. Previously, maps of water-level changes used to estimate the storage-volume changes included a combination of static (unaffected by pumping or nearby pumping) and stressed (affected by pumping or nearby pumping) water levels from wells. Some of these wells were open to the shallow aquifer layer and some were open to the deep aquifer layer of the Equus Beds aquifer. In this report, only static water levels in the shallow aquifer layer were used to determine storage-volume changes. The effects on average water-level and storage-volume change from the use of mixed, stressed water levels and a specific yield of 0.20 were compared to the use of static water levels in the shallow aquifer and a specific yield of 0.15. This comparison indicates that the change in specific yield causes storage-volume changes to decrease about 25 percent, whereas the use of static water levels in the shallow aquifer layer causes an increase of less than 4 percent. Use of a specific yield of 0.15 will result in substantial decreases in the amount of storage-volume change compared to those reported previously that were calculated using a specific yield of 0.20. Based on these revised water-level maps and computations, the overall decline and change in storage from predevelopment to 1993 represented a loss in storage of about

  7. Electronically stimulated deep-center reactions in electron-irradiated InP: Comparison between experiment and recombination-enhancement theories

    International Nuclear Information System (INIS)

    Sibille, A.

    1987-01-01

    We present a detailed study of the recombination enhancement of several defect reactions involving the main deep centers in low-temperature electron-irradiated InP. A fairly good agreement is obtained with the Weeks-Tully-Kimerling theory for the activation energies of the enhanced process. On the other hand, a thorough investigation of a thermally and electronically stimulated defect transformation shows evidence that one major approximation (local vibrational equilibrium) fails, and that the recently proposed [H. Sumi, Phys. Rev. B 29, 4616 (1984)] mechanism of coherent recombination on deep centers is responsible for altered reaction rates at high injection levels

  8. Facts about Birth Defects

    Science.gov (United States)

    ... label> Information For… Media Policy Makers Facts about Birth Defects Language: English (US) Español (Spanish) Recommend on ... having a baby born without a birth defect. Birth Defects Are Common Every 4 ½ minutes, a ...

  9. Neural Tube Defects

    Science.gov (United States)

    Neural tube defects are birth defects of the brain, spine, or spinal cord. They happen in the ... that she is pregnant. The two most common neural tube defects are spina bifida and anencephaly. In ...

  10. A contribution for the detection of deep defects in semi-insulating GaAs by means of PICTS; Ein Beitrag zum Nachweis tiefer Stoerstellen in halbisolierendem GaAs mittels PICTS

    Energy Technology Data Exchange (ETDEWEB)

    Zychowitz, G.

    2006-02-03

    The PICTS procedure is one of the most frequently applied methods for the characterization of semi-insulating semiconductors. The methodical progresses in the determination of defect parameters by this proceudure are presented in this thesis. as practicable method for the detection of a temperature-dependent change of the occupation ratio of a trap the normation of the PICTS spectra on the emission rate of the electrons is introduced. It is shown that peaks, in which this normation fails, must not applied for the determination of the defect parameters. The studies prove that for the complete charge-alteration of the defects a suitable excitation intensity must be applied. By PICTS measurements on copper-doped samples a systematic dependence of the peak heights of copper-correlated peaks on the copper content of the samples is detected. By the studies it is proved that copper can be detected by means of PICTS up to a minimal AES copper concentration of [Cu{sub min}]approx5.10{sup 14} cm{sup -3}.

  11. Deep frying

    NARCIS (Netherlands)

    Koerten, van K.N.

    2016-01-01

    Deep frying is one of the most used methods in the food processing industry. Though practically any food can be fried, French fries are probably the most well-known deep fried products. The popularity of French fries stems from their unique taste and texture, a crispy outside with a mealy soft

  12. Climate change and ocean acidification impacts on lower trophic levels and the export of organic carbon to the deep ocean

    Directory of Open Access Journals (Sweden)

    A. Yool

    2013-09-01

    Full Text Available Most future projections forecast significant and ongoing climate change during the 21st century, but with the severity of impacts dependent on efforts to restrain or reorganise human activity to limit carbon dioxide (CO2 emissions. A major sink for atmospheric CO2, and a key source of biological resources, the World Ocean is widely anticipated to undergo profound physical and – via ocean acidification – chemical changes as direct and indirect results of these emissions. Given strong biophysical coupling, the marine biota is also expected to experience strong changes in response to this anthropogenic forcing. Here we examine the large-scale response of ocean biogeochemistry to climate and acidification impacts during the 21st century for Representative Concentration Pathways (RCPs 2.6 and 8.5 using an intermediate complexity global ecosystem model, MEDUSA-2.0. The primary impact of future change lies in stratification-led declines in the availability of key nutrients in surface waters, which in turn leads to a global decrease (1990s vs. 2090s in ocean productivity (−6.3%. This impact has knock-on consequences for the abundance of the low trophic level biogeochemical actors modelled by MEDUSA-2.0 (−5.8%, and these would be expected to similarly impact higher trophic level elements such as fisheries. Related impacts are found in the flux of organic material to seafloor communities (−40.7% at 1000 m, and in the volume of ocean suboxic zones (+12.5%. A sensitivity analysis removing an acidification feedback on calcification finds that change in this process significantly impacts benthic communities, suggesting that a~better understanding of the OA-sensitivity of calcifying organisms, and their role in ballasting sinking organic carbon, may significantly improve forecasting of these ecosystems. For all processes, there is geographical variability in change – for instance, productivity declines −21% in the Atlantic and increases +59% in

  13. Characterization of failure modes in deep UV and deep green LEDs utilizing advanced semiconductor localization techniques.

    Energy Technology Data Exchange (ETDEWEB)

    Tangyunyong, Paiboon; Miller, Mary A.; Cole, Edward Isaac, Jr.

    2012-03-01

    We present the results of a two-year early career LDRD that focused on defect localization in deep green and deep ultraviolet (UV) light-emitting diodes (LEDs). We describe the laser-based techniques (TIVA/LIVA) used to localize the defects and interpret data acquired. We also describe a defect screening method based on a quick electrical measurement to determine whether defects should be present in the LEDs. We then describe the stress conditions that caused the devices to fail and how the TIVA/LIVA techniques were used to monitor the defect signals as the devices degraded and failed. We also describe the correlation between the initial defects and final degraded or failed state of the devices. Finally we show characterization results of the devices in the failed conditions and present preliminary theories as to why the devices failed for both the InGaN (green) and AlGaN (UV) LEDs.

  14. Deep learning

    CERN Document Server

    Goodfellow, Ian; Courville, Aaron

    2016-01-01

    Deep learning is a form of machine learning that enables computers to learn from experience and understand the world in terms of a hierarchy of concepts. Because the computer gathers knowledge from experience, there is no need for a human computer operator to formally specify all the knowledge that the computer needs. The hierarchy of concepts allows the computer to learn complicated concepts by building them out of simpler ones; a graph of these hierarchies would be many layers deep. This book introduces a broad range of topics in deep learning. The text offers mathematical and conceptual background, covering relevant concepts in linear algebra, probability theory and information theory, numerical computation, and machine learning. It describes deep learning techniques used by practitioners in industry, including deep feedforward networks, regularization, optimization algorithms, convolutional networks, sequence modeling, and practical methodology; and it surveys such applications as natural language proces...

  15. Uso del regenerador dérmico Integra® como material de relleno para el tratamiento de defectos del contorno corporal Use of Integra® dermal regeneration template in deep tissue planes for contour defects treatment

    Directory of Open Access Journals (Sweden)

    P. A. Gómez Morell

    2007-09-01

    Full Text Available En el tratamiento de los defectos de contorno corporal se usan múltiples productos biológicos y/o sintéticos. Cuando el volumen no es grande, los autores plantean el uso del regenerador dérmico Integra® eliminando previamente su capa superficial de silicona frente a los inconvenientes que presenta el uso de otros materiales de relleno en Cirugía Plástica (reabsorción variable, intolerancia, infección, granulomas, calcificación, etc. Dicho producto acaba transformándose en neodermis del propio paciente, bien tolerada. Presentamos dos casos con defectos a nivel frontal (postraumático y en tórax anterior (secuelas de reconstrucción tras mastectomía respectivamente, en los que se colocó Integra® en bolsillos profundos y doblado sobre sí mismo para aumentar su volumen. Los resultados son previsibles, con mínima reabsorción y además son duraderos, con seguimiento a los 6 y 12 meses. Los autores recomiendan el uso del regenerador dérmico en volúmenes moderados y/o pequeños, considerando que en grandes volúmenes es preferible el uso del colgajos autólogos y/o colgajos más prótesis.In the treatment of body contour defects we can use many biological and synthetic products. They have many inconvenient effects as variable reabsortion, intolerance, infection, granulomas, calcification, etc. In moderate defects, the authors propose the use of modificated Integra® dermal regeneration template without the superficial silicone layer. Two patients are reported, one with a traumatic frontal defect and another with a depression in the anterior thorax after postmastectomy breast reconstruction post mastectomy. In both we put Integra® into a subcutaneous pocket and we bent it to increase lamina volume. Results are predictable, permanent, with minimal reabsortion after 6 and 12 months follow up. Integra® will be autologous neodermis. The authors recommend the dermal regeneration template for small or medium defects; in large defects they

  16. Application of Deep Learning and Supervised Learning Methods to Recognize Nonlinear Hidden Pattern in Water Stress Levels from Spatiotemporal Datasets across Rural and Urban US Counties

    Science.gov (United States)

    Eisenhart, T.; Josset, L.; Rising, J. A.; Devineni, N.; Lall, U.

    2017-12-01

    In the wake of recent water crises, the need to understand and predict the risk of water stress in urban and rural areas has grown. This understanding has the potential to improve decision making in public resource management, policy making, risk management and investment decisions. Assuming an underlying relationship between urban and rural water stress and observable features, we apply Deep Learning and Supervised Learning models to uncover hidden nonlinear patterns from spatiotemporal datasets. Results of interest includes prediction accuracy on extreme categories (i.e. urban areas highly prone to water stress) and not solely the average risk for urban or rural area, which adds complexity to the tuning of model parameters. We first label urban water stressed counties using annual water quality violations and compile a comprehensive spatiotemporal dataset that captures the yearly evolution of climatic, demographic and economic factors of more than 3,000 US counties over the 1980-2010 period. As county-level data reporting is not done on a yearly basis, we test multiple imputation methods to get around the issue of missing data. Using Python libraries, TensorFlow and scikit-learn, we apply and compare the ability of, amongst other methods, Recurrent Neural Networks (testing both LSTM and GRU cells), Convolutional Neural Networks and Support Vector Machines to predict urban water stress. We evaluate the performance of those models over multiple time spans and combine methods to diminish the risk of overfitting and increase prediction power on test sets. This methodology seeks to identify hidden nonlinear patterns to assess the predominant data features that influence urban and rural water stress. Results from this application at the national scale will assess the performance of deep learning models to predict water stress risk areas across all US counties and will highlight a predominant Machine Learning method for modeling water stress risk using spatiotemporal

  17. Deep Ocean Mineral Supplementation Enhances the Cerebral Hemodynamic Response during Exercise and Decreases Inflammation Postexercise in Men at Two Age Levels

    Directory of Open Access Journals (Sweden)

    Ching-Yin Wei

    2017-12-01

    Full Text Available Background: Previous studies have consistently shown that oral supplementation of deep ocean minerals (DOM improves vascular function in animals and enhances muscle power output in exercising humans.Purpose: To examine the effects of DOM supplementation on the cerebral hemodynamic response during physical exertion in young and middle-aged men.Design: Double-blind placebo-controlled crossover studies were conducted in young (N = 12, aged 21.2 ± 0.4 years and middle-aged men (N = 9, aged 46.8 ± 1.4 years. The counter-balanced trials of DOM and Placebo were separated by a 2-week washout period. DOM and Placebo were orally supplemented in drinks before, during, and after cycling exercise. DOM comprises desalinated minerals and trace elements from seawater collected ~618 m below the earth's surface.Methods: Cerebral hemodynamic response (tissue hemoglobin was measured during cycling at 75% VO2max using near infrared spectroscopy (NIRS.Results: Cycling time to exhaustion at 75% VO2max and the associated plasma lactate response were similar between the Placebo and DOM trials for both age groups. In contrast, DOM significantly elevated cerebral hemoglobin levels in young men and, to a greater extent, in middle-aged men compared with Placebo. An increased neutrophil to lymphocyte ratio (NLR was observed in middle-aged men, 2 h after exhaustive cycling, but was attenuated by DOM.Conclusion: Our data suggest that minerals and trace elements from deep oceans possess great promise in developing supplements to increase the cerebral hemodynamic response against a physical challenge and during post-exercise recovery for middle-aged men.

  18. Application of Ga-Al discrimination plots in identification of high strength granitic host rocks for deep geological repository of high level radioactive waste

    International Nuclear Information System (INIS)

    Bajpai, R.K.; Narayan, P.K.; Trivedi, R.K.; Purohit, M.K.

    2010-01-01

    The permanent disposal of vitrified high level wastes and in some cases even spent fuel, is being planned in specifically designed and built deep geological repository located in the depth range of 500-600m in appropriate host rock at carefully selected sites. Such facilities are expected to provide very long term isolation and confinement to the disposed waste by means of long term mechanical stability of such structures that results from very high strength and homogeneity of the chosen rock, geochemical compatible environment around the disposed waste and general lack of groundwater. In Indian geological repository development programme, granites have been selected as target host rock and large scale characterization studies have been undertaken to develop database of mineralogy, petrology, geochemistry and rock mechanical characteristics. The paper proposes a new approach for demarcation of high strength homogeneous granite rocks from within an area of about 100 square kilometres wherein a cocktail of granites of different origins with varying rock mass characteristics co exists. The study area is characterised by the presence of A, S and I type granites toughly intermixed. The S type granites are derived from sedimentary parent material and therefore carry relics of parent fabric and at times undigested material with resultant reduction in their strength and increased inhomogeneity. On the other hand I type varieties are derived from igneous parents and are more homogeneous with sufficient strength. The A type granites are emplaced as molten mass in a complete non-tectonic setting with resultant homogeneous compositions, absence of tectonic fabric and very high strength. Besides they are silica rich with less vulnerability to alterations with time. Thus A type granites are most suited for construction of Deep Geological Repository. For developing a geochemical approach for establishing relation between chemical compositions and rock strength parameters, a

  19. Deep sequencing of Brachypodium small RNAs at the global genome level identifies microRNAs involved in cold stress response

    Directory of Open Access Journals (Sweden)

    Chong Kang

    2009-09-01

    Full Text Available Abstract Background MicroRNAs (miRNAs are endogenous small RNAs having large-scale regulatory effects on plant development and stress responses. Extensive studies of miRNAs have only been performed in a few model plants. Although miRNAs are proved to be involved in plant cold stress responses, little is known for winter-habit monocots. Brachypodium distachyon, with close evolutionary relationship to cool-season cereals, has recently emerged as a novel model plant. There are few reports of Brachypodium miRNAs. Results High-throughput sequencing and whole-genome-wide data mining led to the identification of 27 conserved miRNAs, as well as 129 predicted miRNAs in Brachypodium. For multiple-member conserved miRNA families, their sizes in Brachypodium were much smaller than those in rice and Populus. The genome organization of miR395 family in Brachypodium was quite different from that in rice. The expression of 3 conserved miRNAs and 25 predicted miRNAs showed significant changes in response to cold stress. Among these miRNAs, some were cold-induced and some were cold-suppressed, but all the conserved miRNAs were up-regulated under cold stress condition. Conclusion Our results suggest that Brachypodium miRNAs are composed of a set of conserved miRNAs and a large proportion of non-conserved miRNAs with low expression levels. Both kinds of miRNAs were involved in cold stress response, but all the conserved miRNAs were up-regulated, implying an important role for cold-induced miRNAs. The different size and genome organization of miRNA families in Brachypodium and rice suggest that the frequency of duplication events or the selection pressure on duplicated miRNAs are different between these two closely related plant species.

  20. Deep Super Learner: A Deep Ensemble for Classification Problems

    OpenAIRE

    Young, Steven; Abdou, Tamer; Bener, Ayse

    2018-01-01

    Deep learning has become very popular for tasks such as predictive modeling and pattern recognition in handling big data. Deep learning is a powerful machine learning method that extracts lower level features and feeds them forward for the next layer to identify higher level features that improve performance. However, deep neural networks have drawbacks, which include many hyper-parameters and infinite architectures, opaqueness into results, and relatively slower convergence on smaller datase...

  1. Extended defects and hydrogen interactions in ion implanted silicon

    Science.gov (United States)

    Rangan, Sanjay

    The structural and electrical properties of extended defects generated because of ion implantation and the interaction of hydrogen with these defects have been studied in this work. Two distinct themes have been studied, the first where defects are a detrimental and the second where they are useful. In the first scenario, transient enhanced diffusion of boron has been studied and correlated with defect evolution studies due to silicon and argon ion implants. Spreading resistance profiles (SRP) correlated with deep level transient spectroscopy (DLTS) measurements, reveal that a low anneal temperatures (TED at low anneal temperatures (550°C, the effect of hydrogen is lost, due to its out-diffusion. Moreover, due to catastrophic out-diffusion of hydrogen, additional damage is created resulting in deeper junctions in hydrogenated samples, compared to the non-hydrogenated ones. Comparing defect evolution due to Si and Ar ion implants at different anneal temperatures, while the type of defects is the same in the two cases, their (defect) dissolution occurs at lower anneal temperatures (˜850°C) for Si implants. Dissolution for Ar implants seems to occur at higher anneal temperatures. The difference has been attributed to the increased number of vacancies created by Ar to that of silicon implant. In second aspect, nano-cavity formation due to vacancy agglomeration has been studied by helium ion implantation and furnace anneal, where the effect of He dose, implant energy and anneal time have been processing parameters that have been varied. Cavities are formed only when the localized concentration of He is greater than 3 x 1020 cm-3. While at high implant doses, a continuous cavity layer is formed, at low implant doses a discontinuous layer is observed. The formation of cavities at low doses has been observed for the first time. Variation of anneal times reveal that cavities are initially facetted (for short anneal times) and tend to become spherical when annealed for

  2. Probabilistic safety assessment for a generic deep geological repository for high-level waste and long-lived intermediate-level waste in clay

    International Nuclear Information System (INIS)

    Resele, G.; Holocher, J.; Mayer, G.; Hubschwerlen, N.; Niemeyer, M.; Beushausen, M.; Wollrath, J.

    2010-01-01

    Document available in extended abstract form only. In the selection procedure for the search of a final site location for the disposal of radioactive wastes, the comparison and evaluation of different potentially suitable repository systems in different types of host rocks will be an essential and crucial step. Since internationally accepted guidelines on how to perform such quantitative comparisons between repository systems with regard to their long-term safety behaviour are still lacking, in 2007 the German Federal Office for Radiation Protection launched the project 'VerSi' (Vergleichende Sicherheitsanalysen - Comparing Safety Assessments) that aims at the development of a methodology for the comparison of long-term safety assessments. A vital part of the VerSi project is the performance of long-term safety assessments for the comparison of two repository systems. The comparison focuses on a future repository for heat-generating, i.e. high-level and long-lived intermediate-level radioactive wastes in Germany. Rock salt is considered as a potential host rock for such a repository, and one repository system in VerSi is defined similarly to the potential site located in the Gorleben salt dome. Another suitable host rock formation may be clay. A generic location within the lower Cretaceous clays in Northern Germany is therefore chosen for the comparison of safety assessments within the VerSi project. The long-term safety assessment of a repository system for heat-generating radioactive waste at the generic clay location comprises different steps, amongst others: - Identifying the relevant processes in the near-field, in the geosphere and in the biosphere which are relevant for the long-term safety behaviour. - Development of a safety concept for the repository system. - Deduction of scenarios of the long-term evolution of the repository system. - Definition of statistic weights, i. e. the likelihood of occurrence of the scenarios. - Performance of a

  3. The nature of a deformation zone and fault rock related to a recent rockburst at Western Deep Levels Gold Mine, Witwatersrand Basin, South Africa

    Science.gov (United States)

    Stewart, R. A.; Reimold, W. U.; Charlesworth, E. G.; Ortlepp, W. D.

    2001-07-01

    In August 1998, a major deformation zone was exposed over several metres during mining operations on 87 Level (2463 m below surface) at Western Deep Levels Gold Mine, southwest of Johannesburg, providing a unique opportunity to study the products of a recent rockburst. This zone consists of three shear zones, with dip-slip displacements of up to 15 cm, that are oriented near-parallel to the advancing stope face. Jogs and a highly pulverised, cataclastic 'rock-flour' are developed on the displacement surfaces, and several sets of secondary extensional fractures occur on either side of the shear zones. A set of pinnate (feather) joints intersects the fault surfaces perpendicular to the slip vector. Microscopically, the shear zones consist of two pinnate joint sets that exhibit cataclastic joint fillings; quartz grains display intense intragranular fracturing. Secondary, intergranular extension fractures are associated with the pinnate joints. Extensional deformation is also the cause of the breccia fill of the pinnate joints. The initial deformation experienced by this zone is brittle and tensile, and is related to stresses induced by mining. This deformation has been masked by later changes in the stress field, which resulted in shearing. This deformation zone does not appear to be controlled by pre-existing geological features and, thus, represents a 'burst fracture', which is believed to be related to a seismic event of magnitude ML=2.1 recorded in July 1998, the epicentre of which was located to within 50 m of the study locality.

  4. Radiation defect distribution in silicon irradiated with 600 keV electrons

    International Nuclear Information System (INIS)

    Hazdra, P.; Dorschner, H.

    2003-01-01

    Low-doped n-type float zone silicon was irradiated with 600 keV electrons to fluences from 2x10 13 to 1x10 15 cm -2 . Radiation defects, their introduction rates and full-depth profiles were measured by two complementary methods - the capacitance deep level spectroscopy and the high-voltage current transient spectroscopy. Results show that, in the vicinity of the anode junction, the profile of vacancy-related defect centers is strongly influenced by electric field and an excessive generation of vacancies. In the bulk, the slope of the profile can be derived from the distribution of absorbed dose taking into the account the threshold energy necessary for Frenkel pair formation and the dependency of the defect introduction rate on electron energy

  5. Annealing of the Sb-vacancy and a closely related radiation induced defect in n-type germanium

    Science.gov (United States)

    Barnard, Abraham W.; Auret, F. D.; Meyer, W. E.

    2018-04-01

    Deep level transient spectroscopy was used to study the defects induced by alpha-particle irradiation from an Am241 source in antimony doped n-type germanium. Previous investigations of the well know Sb-vacancy defect have led to the discovery of a second defect with very similar emission properties, referred to as the E‧. Although both defects have similar emission rates, they have very different annealing properties. In this study we further investigated these properties of the E‧ in Sb doped samples irradiated at 270 K with alpha particles from an Am241 source. Laplace deep level transient spectroscopy was used to determine the concentration of each defect. An isothermal annealing study of the E‧ was carried out in the temperature range 300 K to 325 K in 5 K increments, while the Sb-vacancy was annealed out completely at 410 K onwards, long after the E‧ was completely annealed out. The annealing activation energy was determined through isothermal annealing profiles for both the Sb-Vacancy and the E‧ as 1.05 eV and 0.73 eV respectively with a prefactor of 2.05 × 109 s-1 and 2.7 × 108 s-1.

  6. A compensating point defect in carbon-doped GaN substrates studied with electron paramagnetic resonance spectroscopy

    Science.gov (United States)

    Willoughby, W. R.; Zvanut, M. E.; Paudel, Subash; Iwinska, M.; Sochacki, T.; Bockowski, M.

    2018-04-01

    Electron paramagnetic resonance (EPR) spectroscopy was used to investigate a type of point defect present in 1019 cm-3 carbon-doped GaN substrates grown by hydride vapor phase epitaxy. A broad, isotropic resonance at g ˜ 1.987 was observed at 3.5 K, and the EPR intensity increased with illumination at energies greater than 2.75 eV and decreased with photon energies greater than 0.95 eV. The latter is consistent with a deep level of 0.95 eV above the valence band maximum and implies that the associated defect likely participates in donor compensation. The ionization energy for this defect is close to the predicted value for the (-/0) transition level of CN and transition levels associated with Ga vacancies such as VGa and VGa-ON-2H.

  7. Electrically active defects in p-type silicon after alpha-particle irradiation

    Science.gov (United States)

    Danga, Helga T.; Auret, F. Danie; Tunhuma, Shandirai M.; Omotoso, Ezekiel; Igumbor, Emmanuel; Meyer, Walter E.

    2018-04-01

    In this work, we investigated the defects introduced when boron (B) doped silicon (Si) was irradiated by making use of a 5.4 MeV americium (Am) 241 foil radioactive source with a fluence rate of 7×106 cm-2 s-1 at room temperature. Deep level transient spectroscopy (DLTS) and Laplace-DLTS measurements were used to investigate the electronic properties of the introduced defects. After exposure at a fluence of 5.1×1010 cm-2, the energy levels of the hole traps measured were: H(0.10), H(0.16), H(0.33) and H(0.52) The defect level H(0.10) was tri-vacancy related. H(0.33) was identified as the interstitial carbon (Ci) related defect which was a result of radiation induced damage. H(0.52) was a B-related defect. Explicit deductions about the origin of H(0.16) have not yet been achieved.

  8. Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry

    Science.gov (United States)

    Stenberg, Pontus; Booker, Ian D.; Karhu, Robin; Pedersen, Henrik; Janzén, Erik; Ivanov, Ivan G.

    2018-04-01

    Point defects in n- and p-type 4H-SiC grown by fluorinated chemical vapor deposition (CVD) have been characterized optically by photoluminescence (PL) and electrically by deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). The results are considered in comparison with defects observed in non-fluorinated CVD growth (e.g., using SiH4 instead of SiF4 as silicon precursor), in order to investigate whether specific fluorine-related defects form during the fluorinated CVD growth, which might prohibit the use of fluorinated chemistry for device-manufacturing purposes. Several new peaks identifying new defects appear in the PL of fluorinated-grown samples, which are not commonly observed neither in other halogenated chemistries, nor in the standard CVD chemistry using silane (SiH4). However, further investigation is needed in order to determine their origin and whether they are related to incorporation of F in the SiC lattice, or not. The electric characterization does not find any new electrically-active defects that can be related to F incorporation. Thus, we find no point defects prohibiting the use of fluorinated chemistry for device-making purposes.

  9. Carbon-hydrogen defects with a neighboring oxygen atom in n-type Si

    Science.gov (United States)

    Gwozdz, K.; Stübner, R.; Kolkovsky, Vl.; Weber, J.

    2017-07-01

    We report on the electrical activation of neutral carbon-oxygen complexes in Si by wet-chemical etching at room temperature. Two deep levels, E65 and E75, are observed by deep level transient spectroscopy in n-type Czochralski Si. The activation enthalpies of E65 and E75 are obtained as EC-0.11 eV (E65) and EC-0.13 eV (E75). The electric field dependence of their emission rates relates both levels to single acceptor states. From the analysis of the depth profiles, we conclude that the levels belong to two different defects, which contain only one hydrogen atom. A configuration is proposed, where the CH1BC defect, with hydrogen in the bond-centered position between neighboring C and Si atoms, is disturbed by interstitial oxygen in the second nearest neighbor position to substitutional carbon. The significant reduction of the CH1BC concentration in samples with high oxygen concentrations limits the use of this defect for the determination of low concentrations of substitutional carbon in Si samples.

  10. Characterization of defects in hydrogenated amorphous silicon deposited on different substrates by capacitance techniques

    International Nuclear Information System (INIS)

    Darwich, R.; Roca i Cabarrocas, P.

    2011-01-01

    Hydrogenated amorphous silicon (a-Si:H) thin films deposited on crystalline silicon and Corning glass substrate were analyzed using different capacitance techniques. The distribution of localized states and some electronic properties were studied using the temperature, frequency and bias dependence of the Schottky barrier capacitance and deep level transient spectroscopy. Our results show that the distribution of the gap states depends on the type of substrate. We have found that the films deposited on c-Si substrate represent only one positively charged or prerelaxed neutral deep state and one interface state, while the films deposited on glass substrate have one interface state and three types of deep defect states, positively or prerelaxed neutral, neutral and negatively charged.

  11. FEBEX project: full-scale engineered barriers experiment for a deep geological repository for high level radioactive waste in crystalline host rock. Final report

    International Nuclear Information System (INIS)

    Alberdi, J.; Barcala, J. M.; Campos, R.; Cuevas, A. M.; Fernandez, E.

    2000-01-01

    FEBEX has the multiple objective of demonstrating the feasibility of manufacturing, handling and constructing the engineered barriers and of developing codes for the thermo-hydro-mechanical and thermo-hydro-geochemical performance assessment of a deep geological repository for high level radioactive wastes. These objectives require integrated theoretical and experimental development work. The experimental work consists of three parts: an in situ test, a mock-up test and a series of laboratory tests. The experiments is based on the Spanish reference concept for crystalline rock, in which the waste capsules are placed horizontally in drifts surround by high density compacted bentonite blocks. In the two large-scale tests, the thermal effects of the wastes were simulated by means of heaters; hydration was natural in the in situ test and controlled in the mock-up test. The large-scale tests, with their monitoring systems, have been in operation for more than two years. the demonstration has been achieved in the in situ test and there are great expectation that numerical models sufficiently validated for the near-field performance assessment will be achieved. (Author)

  12. Earth system modelling on system-level heterogeneous architectures: EMAC (version 2.42) on the Dynamical Exascale Entry Platform (DEEP)

    Science.gov (United States)

    Christou, Michalis; Christoudias, Theodoros; Morillo, Julián; Alvarez, Damian; Merx, Hendrik

    2016-09-01

    We examine an alternative approach to heterogeneous cluster-computing in the many-core era for Earth system models, using the European Centre for Medium-Range Weather Forecasts Hamburg (ECHAM)/Modular Earth Submodel System (MESSy) Atmospheric Chemistry (EMAC) model as a pilot application on the Dynamical Exascale Entry Platform (DEEP). A set of autonomous coprocessors interconnected together, called Booster, complements a conventional HPC Cluster and increases its computing performance, offering extra flexibility to expose multiple levels of parallelism and achieve better scalability. The EMAC model atmospheric chemistry code (Module Efficiently Calculating the Chemistry of the Atmosphere (MECCA)) was taskified with an offload mechanism implemented using OmpSs directives. The model was ported to the MareNostrum 3 supercomputer to allow testing with Intel Xeon Phi accelerators on a production-size machine. The changes proposed in this paper are expected to contribute to the eventual adoption of Cluster-Booster division and Many Integrated Core (MIC) accelerated architectures in presently available implementations of Earth system models, towards exploiting the potential of a fully Exascale-capable platform.

  13. Deep ground water microbiology in Swedish granite rock and it's relevance for radio-nuclide migration from a Swedish high level nuclear waste repository

    International Nuclear Information System (INIS)

    Pedersen, Karsten

    1989-03-01

    Data on numbers, species and activity of deep ground water microbial populations in Swedish granite rock have been collected. Specific studies are performed on radio-nuclid uptake on bacteria judge to be probable inhabitants in Swedish nuclear waste repositories. An integrated mobile field laboratory was used for water sampling and for the immediate counting and inoculation of the samples from boreholes at levels between 129 and 860 m. A sampler adapted for the collection of undisturbed samples for gas analysis was used to collect samples for bacterial enumerations and enrichments. The sampler can be opened and closed from the surface at the actual sampling depth. The samples can subsequently be brought to the surface without contact with air and with the pressure at the actual sampling depth. The number of bacteria were determined in samples from the gas sampler when this was possible. Else numbers are determined in the water that is pumped up to the field lab. The average total number of bacteria is 3 x 10 5 bacterial ml -1 . The number of bacteria possible to recover with plate count arrays from 0.10 to 21.9%. (author)

  14. A model for the analysis of a normal evolution scenarios for a deep geological granite repository for high-level radioactive waste

    International Nuclear Information System (INIS)

    Cormenzana Lopez, J.L.; Cunado, M.A.; Lopez, M.T.

    1996-01-01

    The methodology usually used to evaluate the behaviour of deep geological repositories for high-level radioactive wastes comprises three phases: Identification of factors (processes, characteristics and events) that can affect the repository. Generation of scenarios. In general, a normal evolution scenario (Reference Scenario) and various disruptive scenarios (earthquake, human intrusion, etc) are considered. Evaluation of the behaviour of the repository in each scenario. The normal evolution scenario taking into account all factors with a high probability of occurrence is the first to be analysed. The performance assessment of behaviour being carried out by ENRESA for the AGP Granite has led to the identification of 63 of these factors. To analyse repository behaviour in the normal evolution scenario, it is necessary to first of all create an integrated model of the global system. This is a qualitative model including the 63 factors identified. For a global view of a such a complex system, it is very useful to graphically display the relationship between factors in an Influence Diagram. This paper shows the Influence Diagram used in the analysis of the AGP Granite Reference Scenario. (Author)

  15. Social transactions with future generations for the management of high level radioactive waste in deep repositories: Reflections on institutional control and retrievability

    International Nuclear Information System (INIS)

    Heriard Dubreuil, G.; Schieber, C.; Schneider, T.; Viala, M.

    1999-01-01

    The management of high level radioactive waste and spent fuel is a key issue and one of the most sensitive aspect of radioactive waste management. Recognising that it is the responsibility of our generation to find a way to isolate the waste, deep geological disposals have been envisaged to provide a definitive solution to the problem, in order to avoid 'undue burden on future generations'. However, even if they are buried, the wastes still exist and human intrusion is still possible as well as releases into the environment in the very far future. At the same time, the ongoing reflections on the ethical aspects of disposals show that it is of great worth that we guarantee future generations the same right of control and responsibility that we ourselves enjoy. This paper presents some reflections on the social transactions associated with the management and design of geological repositories. It is focused on the mission of institutional control in the transmission to future generation of a safety patrimony, composed of the know-how and techniques that permit the human community to 'domesticate' and control the risk. As it appears that the efficiency and the confidence in the control system rely mainly on the capability of implementing corrective actions, some considerations on the role, the consequences and the implementation of retrievability are also presented

  16. FEBEX project: full-scale engineered barriers experiment for a deep geological repository for high level radioactive waste in crystalline host rock

    Energy Technology Data Exchange (ETDEWEB)

    Alberid, J; Barcala, J M; Campos, R; Cuevas, A M; Fernandez, E [Ciemat. Madrid (Spain)

    2000-07-01

    FEBEX has the multiple objective of demonstrating the feasibility of manufacturing, handling and constructing the engineered barriers and of developing codes for the thermo-hydro-mechanical and thermo-hydro-geochemical performance assessment of a deep geological repository for high level radioactive wastes. These objectives require integrated theoretical and experimental development work. The experimental work consists of three parts: an in situ test, a mock-up test and a series of laboratory tests. The experiments is based on the Spanish reference concept for crystalline rock, in which the waste capsules are placed horizontally in drifts surround by high density compacted bentonite blocks. In the two large-scale tests, the thermal effects of the wastes were simulated by means of heaters; hydration was natural in the in situ test and controlled in the mock-up test. The large-scale tests, with their monitoring systems, have been in operation for more than two years. the demonstration has been achieved in the in situ test and there are great expectation that numerical models sufficiently validated for the near-field performance assessment will be achieved. (Author)

  17. Hydrophilic Conjugated Polymers with Large Bandgaps and Deep-Lying HOMO Levels as an Efficient Cathode Interlayer in Inverted Polymer Solar Cells.

    Science.gov (United States)

    Kan, Yuanyuan; Zhu, Yongxiang; Liu, Zhulin; Zhang, Lianjie; Chen, Junwu; Cao, Yong

    2015-08-01

    Two hydrophilic conjugated polymers, PmP-NOH and PmP36F-NOH, with polar diethanol-amine on the side chains and main chain structures of poly(meta-phenylene) and poly(meta-phenylene-alt-3,6-fluorene), respectively, are successfully synthesized. The films of PmP-NOH and PmP36F-NOH show absorption edges at 340 and 343 nm, respectively. The calculated optical bandgaps of the two polymers are 3.65 and 3.62 eV, respectively, the largest ones so far reported for hydrophilic conjugated polymers. PmP-NOH and PmP36F-NOH also possess deep-lying highest occupied molecular orbital levels of -6.19 and -6.15 eV, respectively. Inserting PmP-NOH and PmP36F-NOH as a cathode interlayer in inverted polymer solar cells with a PTB7/PC71 BM blend as the active layer, high power conversion efficiencies of 8.58% and 8.33%, respectively, are achieved, demonstrating that the two hydrophilic polymers are excellent interlayers for efficient inverted polymer solar cells. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Defect detection based on extreme edge of defective region histogram

    Directory of Open Access Journals (Sweden)

    Zouhir Wakaf

    2018-01-01

    Full Text Available Automatic thresholding has been used by many applications in image processing and pattern recognition systems. Specific attention was given during inspection for quality control purposes in various industries like steel processing and textile manufacturing. Automatic thresholding problem has been addressed well by the commonly used Otsu method, which provides suitable results for thresholding images based on a histogram of bimodal distribution. However, the Otsu method fails when the histogram is unimodal or close to unimodal. Defects have different shapes and sizes, ranging from very small to large. The gray-level distributions of the image histogram can vary between unimodal and multimodal. Furthermore, Otsu-revised methods, like the valley-emphasis method and the background histogram mode extents, which overcome the drawbacks of the Otsu method, require preprocessing steps and fail to use the general threshold for multimodal defects. This study proposes a new automatic thresholding algorithm based on the acquisition of the defective region histogram and the selection of its extreme edge as the threshold value to segment all defective objects in the foreground from the image background. To evaluate the proposed defect-detection method, common standard images for experimentation were used. Experimental results of the proposed method show that the proposed method outperforms the current methods in terms of defect detection.

  19. Defect identification in semiconductors with positron annihilation: experiment and theory

    Science.gov (United States)

    Tuomisto, Filip

    2015-03-01

    Positron annihilation spectroscopy is a very powerful technique for the detection, identification and quantification of vacancy-type defects in semiconductors. In the past decades, it has been used to reveal the relationship between opto-electronic properties and specific defects in a wide variety of materials - examples include parasitic yellow luminescence in GaN, dominant acceptor defects in ZnO and broad-band absorption causing brown coloration in natural diamond. In typical binary compound semiconductors, the selective sensitivity of the technique is rather strongly limited to cation vacancies that possess significant open volume and suitable charge (negative of neutral). On the other hand, oxygen vacancies in oxide semiconductors are a widely debated topic. The properties attributed to oxygen vacancies include the inherent n-type conduction, poor p-type dopability, coloration (absorption), deep level luminescence and non-radiative recombination, while the only direct experimental evidence of their existence has been obtained on the crystal surface. We will present recent advances in combining state-of-the-art positron annihilation experiments and ab initio computational approaches. The latter can be used to model both the positron lifetime and the electron-positron momentum distribution - quantities that can be directly compared with experimental results. We have applied these methods to study vacancy-type defects in III-nitride semiconductors (GaN, AlN, InN) and oxides such as ZnO, SnO2, In2O3andGa2O3. We will show that cation-vacancy-related defects are important compensating centers in all these materials when they are n-type. In addition, we will show that anion (N, O) vacancies can be detected when they appear as complexes with cation vacancies.

  20. Interactions of structural defects with metallic impurities in multicrystalline silicon

    International Nuclear Information System (INIS)

    McHugo, S.A.; Thompson, A.C.; Hieslmair, H.

    1997-01-01

    Multicrystalline silicon is one of the most promising materials for terrestrial solar cells. It is critical to getter impurities from the material as well as inhibit contamination during growth and processing. Standard processing steps such as, phosphorus in-diffusion for p-n junction formation and aluminum sintering for backside ohmic contact fabrication, intrinsically possess gettering capabilities. These processes have been shown to improve L n values in regions of multicrystalline silicon with low structural defect densities but not in highly dislocated regions. Recent Deep Level Transient Spectroscopy (DLTS) results indirectly reveal higher concentrations of iron in highly dislocated regions while further work suggests that the release of impurities from structural defects, such as dislocations, is the rate limiting step for gettering in multicrystalline silicon. The work presented here directly demonstrates the relationship between metal impurities, structural defects and solar cell performance in multicrystalline silicon. Edge-defined Film-fed Growth (EFG) multicrystalline silicon in the as-grown state and after full solar cell processing was used in this study. Standard solar cell processing steps were carried out at ASE Americas Inc. Metal impurity concentrations and distributions were determined by use of the x-ray fluorescence microprobe (beamline 10.3.1) at the Advanced Light Source, Lawrence Berkeley National Laboratory. The sample was at atmosphere so only elements with Z greater than silicon could be detected, which includes all metal impurities of interest. Structural defect densities were determined by preferential etching and surface analysis using a Scanning Electron Microscope (SEM) in secondary electron mode. Mapped areas were exactly relocated between the XRF and SEM to allow for direct comparison of impurity and structural defect distributions

  1. Analysis the common reasons and defense measures of nursing defect in basic-level hospital%基层医疗机构常见护理缺陷发生原因分析及防范对策

    Institute of Scientific and Technical Information of China (English)

    柳月金; 徐文敏; 洪雪云

    2011-01-01

    目的:探讨基层医院护理缺陷发生的常见原因及防范对策.方法:调查近3年来发生在本辖区医疗机构中的76例护理缺陷并总结分析.结果:明确了发生在我区的护理缺陷高危因素与环节,并提出针对性防范措施.结论:针对护理缺陷发生的高危因素和重要环节提出对策,可规范护理人员行为,加强护理管理和职业道德教育,提高护理人员素质和业务技能及理论知识的培训质量,保证病人就医安全.%Objective: Discuss the common reasons and defense measures of nursing defect in basic - level hospital.Methods: Make a survey of nursing defect in the medical institution of the district during 3 years, and analyze it.Result: Make it clear the risk factors and steps of nursing defect in our distrist, and put forward the defense measures.Conclusion:Aim at the risk factors and important steps of nursing defect, and put forward the measures, to standize the behavivars of nursing staff, and strengthen the nursing management and professional ethics education, also improve the quality of nursing staff, business skills and theory knowledge.It is a key to provide medical services and make sure the medical safety for patients.

  2. Investigation of intrinsic and extrinsic defects effective role on producing intense red emission in ZnO:Eu nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Najafi, Mehrdad, E-mail: najafi@shahroodut.ac.ir; Haratizadeh, Hamid

    2015-05-15

    Highlights: • Effective role of defects on producing red emission at indirect excitation. • V{sub Zn} and V{sub O} defects have important role on energy transfer. • Mg related defects and Zn{sub i} defects were responsible for blue emission. • Extrinsic and intrinsic defects mediated energy transfer to sensitize Eu{sup 3+} ions. • Decrease of red emission because of diminishing in oxygen vacancy. - Abstract: Europium doped ZnO nanorads and nanosheets were synthesized by hydrothermal method. Effects of Mg doping, morphology and annealing in oxygen ambient on structural and optical properties of ZnO nanostructures were investigated using X-ray diffraction (XRD), particle size analysis (PSA), thermo gravimetric analysis (TGA), differential thermal analysis (DTA), differential thermo gravimetry (DTG), scanning electron microscopy (SEM) and photoluminescence spectroscopy (PL). This study recommends that both of intrinsic and extrinsic defects facilitate energy transfer (ET) from the ZnO host to Eu{sup 3+} ions and consequently have efficient role on producing intense red emission at indirect excitation. The results also showed that annealing process improved the crystal structure of ZnO nanosheets due to decrease of surface defects; however decreased ET and red emission because of diminishing in oxygen vacancy. In addition in ZnO nanorods sample with more surface area in comparison with ZnO nanosheets sample deep level emissions are enhanced.

  3. Identification of Hadronically-Decaying W Bosons and Top Quarks Using High-Level Features as Input to Boosted Decision Trees and Deep Neural Networks in ATLAS at $\\sqrt{s}$ = 13 TeV

    CERN Document Server

    The ATLAS collaboration

    2017-01-01

    The application of boosted decision trees and deep neural networks to the identification of hadronically-decaying W bosons and top quarks using high-level jet observables as inputs is investigated using Monte Carlo simulations. In the case of both boosted decision trees and deep neural networks, the use of machine learning techniques is found to improve the background rejection with respect to simple reference single jet substructure and mass taggers. Linear correlations between the resulting classifiers and the substructure variables are also presented.

  4. Identification of Hadronically-Decaying W Boson Top Quarks Using High-Level Features as Input to Boosted Decision Trees and Deep Neural Networks in ATLAS at #sqrt{s} = 13 TeV

    CERN Document Server

    Nitta, Tatsumi; The ATLAS collaboration

    2017-01-01

    The application of boosted decision trees and deep neural networks to the identification of hadronically-decaying W bosons and top quarks using high-level jet observables as inputs is investigated using Monte Carlo simulations. In the case of both boosted decision trees and deep neural networks, the use of machine learning techniques is found to improve the background rejection with respect to simple reference single jet substructure and mass taggers. Linear correlations between the resulting classifiers and the substructure variables are also presented.

  5. DLTS and capacitance transients study of defects induced by neutron irradiation in MOS structures CCD process

    International Nuclear Information System (INIS)

    Ahaitouf, A.; Losson, E.; Charles, J.P.

    1999-01-01

    The aim of this paper is to study neutron irradiation effects on PMOS capacitors and NMOSFETs transistors. The characterization of induced defects was made by capacitance transients C(t) measurements, DLTS spectroscopy, and optical DLTS (ODLTS). DLTS spectra present three peaks due to deep levels created in the semiconductor and two peaks due to minority carrier generation. Two levels are reported in the literature. Two other minority carrier traps have been observed on ODLTS spectra after irradiation. This can explain the decrease of the minority carrier generation lifetime observed by capacitance transients measurements. (authors)

  6. Seismic risk mitigation in deep level South African mines by state of the art underground monitoring - Joint South African and Japanese study

    Science.gov (United States)

    Milev, A.; Durrheim, R.; Nakatani, M.; Yabe, Y.; Ogasawara, H.; Naoi, M.

    2012-04-01

    Two underground sites in a deep level gold mine in South Africa were instrumented by the Council for Scientific and Industrial Research (CSIR) with tilt meters and seismic monitors. One of the sites was also instrumented by JApanese-German Underground Acoustic emission Research in South Africa (JAGUARS) with a small network, approximately 40m span, of eight Acoustic Emission (AE) sensors. The rate of tilt, defined as quasi-static deformations, and the seismic ground motion, defined as dynamic deformations, were analysed in order to understand the rock mass behavior around deep level mining. In addition the high frequency AE events recorded at hypocentral distances of about 50m located at 3300m below the surface were analysed. A good correspondence between the dynamic and quasi-static deformations was found. The rate of coseismic and aseismic tilt, as well as seismicity recorded by the mine seismic network, are approximately constant until the daily blasting time, which takes place from about 19:30 until shortly before 21:00. During the blasting time and the subsequent seismic events the coseismic and aseismic tilt shows a rapid increase.Much of the quasi-static deformation, however, occurs independently of the seismic events and was described as 'slow' or aseismic events. During the monitoring period a seismic event with MW 2.2 occurred in the vicinity of the instrumented site. This event was recorded by both the CSIR integrated monitoring system and JAGUARS acoustic emotion network. The tilt changes associated with this event showed a well pronounced after-tilt. The aftershock activities were also well recorded by the acoustic emission and the mine seismic networks. More than 21,000 AE aftershocks were located in the first 150 hours after the main event. Using the distribution of the AE events the position of the fault in the source area was successfully delineated. The distribution of the AE events following the main shock was related to after tilt in order to

  7. Hole-capture properties of the electron-irradiation-induced deep-level H5 in p-type InP: A charge-controlled bistable model

    International Nuclear Information System (INIS)

    Bretagnon, T.; Bastide, G.; Rouzeyre, M.

    1989-01-01

    The electron-induced irradiated defect H 5 in Zn-doped p-type InP is an unusual hole trap, since its temperature-independent weak-hole capture cross section, σ c ∼10 -21 cm 2 , is 6 orders of magnitude lower than the value obtained from thermal-emission rates. We present a charge-controlled bistable configuration-coordinate diagram that explains this large difference and accounts for the optical-absorption properties. In addition, a microscopic D In n+ -Zn - defect, made by pairing under electrostatic attraction of the ionized acceptor Zn - and of a positively charged primitive defect D In n+ of the In sublattice, is tentatively proposed as a plausible complex at the origin of H 5

  8. Floristic composition of gold and uranium tailings dams, and adja­cent polluted areas, on South Africa’s deep-level mines

    Directory of Open Access Journals (Sweden)

    I. M. Weiersbye

    2006-08-01

    Full Text Available Gold and uranium tailings (‘slimes’ dams and the adjacent polluted soils in the deep-level mining regions of South Africa (Carletonville, Klerksdorp and Welkom were surveyed for the frequency of occurrence of naturally colonizing, actively introduced and persisting plant species. Fifty-six tailings dams with a combined area of 5864 ha. and a similar area o f tail- ings-polluted soils, were surveyed between July 1996 and March 1997. During the survey, 376 plant species and subspecies were recorded from the dams and adjacent polluted soils, with an additional  8 6  records obtained between 1998 and 2003 (i.e. a total of 462 taxa: species and infraspecific species. Overall, the most commonly represented families were the Poaceae (107 species and subspecies, Asteraceae (81. Fabaceae (55 and Anacardiaceae (16. with other families represented by just one to 14 species. Only 60 species were common to all three regions, and of these 24 had been introduced during rehabilitation attempts. Most of the species found on tailings were persisters or natural colonizers (53-88%, depending on substrate, with the vast majority being indigenous and perennial taxa (76% and 85% respectively, with semi-woody to woody growth forms (6 6% being resprouters, forbs, shrubs and trees. Less than 4% of the naturally-colonizing taxa found during the survey had also been introduced by vegetation practitioners. The majority of introduced plants were alien herbaceous taxa. The number and frequency of annuals was only high on recently vegetated sites, whereas annuals were rarely present on old-vegetated and never-vegetated dams. This list includes a wide range of indigenous plant species that may be suitable for phytoremediation of tailings dams and polluted soils due to their apparent tolerance of acid mine drainage and salinity.

  9. A preliminary study on the long-term geologic stability for deep geological disposal of high level radioactive waste in Korea

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chun Soo; Bae, Dae Seok; Kim, Kyung Su; Park, Byoung Yoon; Koh, Young Kown [Korea Atomic Energy Research Institute, Taejeon (Korea)

    2000-03-01

    Geology of the Korean peninsula could be grouped by 7 rock types such as plutonic rocks, crystalline gneisses, metasedimentary rocks, Paleozoic and Mesozoic sedimentary rocks, porous and massive volcanic rocks. The plutonic rock type is the largest rock groups occupying about 35.2% over the peninsula. Tectonic movement could be classified as four great stages as Precambrian, Songnim, Daebo and Bulkuksa even though the ambiguous of prior Songnim. It would be supposed to deep relationship between tectonic movement, orogeny and magmatism. And also, the magmatism within the peninsula could be divided into 5 stages such as 1st stage of Precambrian(>570Ma), 2nd stage of late Paleozoic(>250Ma), 3rd stage of early to mid Mesozoic(200-300Ma), 4th stage of late Mesozoic(135-60Ma) and 5th stage of post early Tertiary(50Ma>). In the seismicities, the peninsula has some characteristics that of the intra-plate seismic characteristics located at south eastern part of the Eurasian plate apart from the boundary of the Pacific and Philippine plate. Eurasian plate is under the two stress direction acting eastward stresses induced the collision of Indo- Australlian plate and westward stresses due to the subduction of due the Pacific and Philippine plate. For the purpose of the quantitative analysis for the safety assessment of HLW disposal, it would be desired to have the long range approach concept for the characterization of FEPs such as upper stated including climate, sae level change, uplift and subsidence, erosion and sedimentation. 38 refs., 18 figs., 25 tabs. (Author)

  10. Clay 2001 dossier: progress report on feasibility studies and research into deep geological disposal of high-level, long-lived waste

    International Nuclear Information System (INIS)

    2001-12-01

    A French Act of Parliament passed on 30 December 1991 set out the main areas of research required to prepare solutions for the long-term management of high-level, long-lived radioactive waste. The three avenues of research listed in the Act included a feasibility study of the deep geological disposal of these waste, with responsibility for steering the study given to ANDRA, France National Agency for Radioactive Waste Management. Following government decisions taken in 1998, the study focused on two types of geological medium, clay and granite. The clay formations study is essentially based on results from an underground laboratory sited at the border between the Meuse and Haute-Marne departments, where the Callovo-Oxfordian argillite beds are being investigated. No site has yet been chosen for an underground laboratory for the granite study, so for the time being this will draw on generic work and on research carried out in laboratories outside France. ANDRA has decided to present an initial report on the results of its research programme, publishing a dossier on the work on clay formations in 2001 with a second dossier covering the work on granite due for release in 2002. This dossier is thus a review of the work carried out by ANDRA on the feasibility study into a radioactive waste repository in a clay formation. It represents one step in a process of studies and research work leading up to the submission of a report due in 2005 containing ANDRA conclusions on the feasibility of a repository in the clay formation. (author)

  11. Craniotomy Frontal Bone Defect

    African Journals Online (AJOL)

    2018-03-01

    Mar 1, 2018 ... Defect reconstruction and fixation of the graft: The defect of ... where all loose fragments of fractured frontal bone was removed via the ... Mandible. • Ilium. • Allograft ... pediatric patients owing to skull growth. Thus, autologous ...

  12. Congenital platelet function defects

    Science.gov (United States)

    ... pool disorder; Glanzmann's thrombasthenia; Bernard-Soulier syndrome; Platelet function defects - congenital ... Congenital platelet function defects are bleeding disorders that cause reduced platelet function. Most of the time, people with these disorders have ...

  13. Defect of the Eyelids.

    Science.gov (United States)

    Lu, Guanning Nina; Pelton, Ron W; Humphrey, Clinton D; Kriet, John David

    2017-08-01

    Eyelid defects disrupt the complex natural form and function of the eyelids and present a surgical challenge. Detailed knowledge of eyelid anatomy is essential in evaluating a defect and composing a reconstructive plan. Numerous reconstructive techniques have been described, including primary closure, grafting, and a variety of local flaps. This article describes an updated reconstructive ladder for eyelid defects that can be used in various permutations to solve most eyelid defects. Copyright © 2017 Elsevier Inc. All rights reserved.

  14. Point defects in solids

    International Nuclear Information System (INIS)

    Anon.

    1978-01-01

    The principal properties of point defects are studied: thermodynamics, electronic structure, interactions with etended defects, production by irradiation. Some measuring methods are presented: atomic diffusion, spectroscopic methods, diffuse scattering of neutron and X rays, positron annihilation, molecular dynamics. Then points defects in various materials are investigated: ionic crystals, oxides, semiconductor materials, metals, intermetallic compounds, carbides, nitrides [fr

  15. Fibrous metaphyseal defects

    International Nuclear Information System (INIS)

    Ritschl, P.; Hajek, P.C.; Pechmann, U.

    1989-01-01

    Sixteen patients with fibrous metaphyseal defects were examined with both plain radiography and magnetic resonance (MR) imaging. Depending on the age of the fibrous metaphyseal defects, characteristic radiomorphologic changes were found which correlated well with MR images. Following intravenous Gadolinium-DTPA injection, fibrous metaphyseal defects invariably exhibited a hyperintense border and signal enhancement. (orig./GDG)

  16. Birth Defects (For Parents)

    Science.gov (United States)

    ... Staying Safe Videos for Educators Search English Español Birth Defects KidsHealth / For Parents / Birth Defects What's in ... Prevented? Print en español Anomalías congénitas What Are Birth Defects? While still in the womb, some babies ...

  17. A Wide Band Gap Polymer with a Deep Highest Occupied Molecular Orbital Level Enables 14.2% Efficiency in Polymer Solar Cells.

    Science.gov (United States)

    Li, Sunsun; Ye, Long; Zhao, Wenchao; Yan, Hongping; Yang, Bei; Liu, Delong; Li, Wanning; Ade, Harald; Hou, Jianhui

    2018-05-21

    To simultaneously achieve low photon energy loss ( E loss ) and broad spectral response, the molecular design of the wide band gap (WBG) donor polymer with a deep HOMO level is of critical importance in fullerene-free polymer solar cells (PSCs). Herein, we developed a new benzodithiophene unit, i.e., DTBDT-EF, and conducted systematic investigations on a WBG DTBDT-EF-based donor polymer, namely, PDTB-EF-T. Due to the synergistic electron-withdrawing effect of the fluorine atom and ester group, PDTB-EF-T exhibits a higher oxidation potential, i.e., a deeper HOMO level (ca. -5.5 eV) than most well-known donor polymers. Hence, a high open-circuit voltage of 0.90 V was obtained when paired with a fluorinated small molecule acceptor (IT-4F), corresponding to a low E loss of 0.62 eV. Furthermore, side-chain engineering demonstrated that subtle side-chain modulation of the ester greatly influences the aggregation effects and molecular packing of polymer PDTB-EF-T. With the benefits of the stronger interchain π-π interaction, the improved ordering structure, and thus the highest hole mobility, the most symmetric charge transport and reduced recombination are achieved for the linear decyl-substituted PDTB-EF-T (P2)-based PSCs, leading to the highest short-circuit current density and fill factor (FF). Due to the high Flory-Huggins interaction parameter (χ), surface-directed phase separation occurs in the P2:IT-4F blend, which is supported by X-ray photoemission spectroscopy results and cross-sectional transmission electron microscope images. By taking advantage of the vertical phase distribution of the P2:IT-4F blend, a high power conversion efficiency (PCE) of 14.2% with an outstanding FF of 0.76 was recorded for inverted devices. These results demonstrate the great potential of the DTBDT-EF unit for future organic photovoltaic applications.

  18. Discriminating assimilants and decoupling deep- vs. shallow-level crystal records at Mount Adams using 238U-230Th disequilibria and Os isotopes

    Science.gov (United States)

    Jicha, B.R.; Johnson, C.M.; Hildreth, Wes; Beard, B.L.; Hart, G.L.; Shirey, S.B.; Singer, B.S.

    2009-01-01

    A suite of 23 basaltic to dacitic lavas erupted over the last 350??kyr from the Mount Adams volcanic field has been analyzed for U-Th isotope compositions to evaluate the roles of mantle versus crustal components during magma genesis. All of the lavas have (230Th/238U) > 1 and span a large range in (230Th/232Th) ratios, and most basalts have higher (230Th/232Th) ratios than andesites and dacites. Several of the lavas contain antecrysts (crystals of pre-existing material), yet internal U-Th mineral isochrons from six of seven lavas are indistinguishable from their eruption ages. This indicates a relatively brief period of time between crystal growth and eruption for most of the phenocrysts (olivine, clinopyroxene, plagioclase, magnetite) prior to eruption. One isochron gave a crystallization age that is ~ 20-25??ka older than its corresponding eruptive age, and is interpreted to reflect mixing of older and juvenile crystals or a protracted period of magma storage in the crust. Much of the eruptive volume since 350??ka consists of lavas that have small to moderate 230Th excesses (2-16%), which are likely inherited from melting of a garnet-bearing intraplate ("OIB-like") mantle source. Following melt generation and subsequent migration through the upper mantle, most Mt. Adams magmas interacted with young, mafic lower crust, as indicated by 187Os/188Os ratios that are substantially more radiogenic than the mantle or those expected via mixing of subducted material and the mantle wedge. Moreover, Os-Th isotope variations suggest that unusually large 230Th excesses (25-48%) and high 187Os/188Os ratios in some peripheral lavas reflect assimilation of small degree partial melts of pre-Quaternary basement that had residual garnet or Al-rich clinopyroxene. Despite the isotopic evidence for lower crustal assimilation, these processes are not generally recorded in the erupted phenocrysts, indicating that the crystal record of the deep-level 'cryptic' processes has been

  19. Cardiac dosimetric evaluation of deep inspiration breath-hold level variances using computed tomography scans generated from deformable image registration displacement vectors

    International Nuclear Information System (INIS)

    Harry, Taylor; Rahn, Doug; Semenov, Denis; Gu, Xuejun; Yashar, Catheryn; Einck, John; Jiang, Steve; Cerviño, Laura

    2016-01-01

    There is a reduction in cardiac dose for left-sided breast radiotherapy during treatment with deep inspiration breath-hold (DIBH) when compared with treatment with free breathing (FB). Various levels of DIBH may occur for different treatment fractions. Dosimetric effects due to this and other motions are a major component of uncertainty in radiotherapy in this setting. Recent developments in deformable registration techniques allow displacement vectors between various temporal and spatial patient representations to be digitally quantified. We propose a method to evaluate the dosimetric effect to the heart from variable reproducibility of DIBH by using deformable registration to create new anatomical computed tomography (CT) scans. From deformable registration, 3-dimensional deformation vectors are generated with FB and DIBH. The obtained deformation vectors are scaled to 75%, 90%, and 110% and are applied to the reference image to create new CT scans at these inspirational levels. The scans are then imported into the treatment planning system and dose calculations are performed. The average mean dose to the heart was 2.5 Gy (0.7 to 9.6 Gy) at FB, 1.2 Gy (0.6 to 3.8 Gy, p < 0.001) at 75% inspiration, 1.1 Gy (0.6 to 3.1 Gy, p = 0.004) at 90% inspiration, 1.0 Gy (0.6 to 3.0 Gy) at 100% inspiration or DIBH, and 1.0 Gy (0.6 to 2.8 Gy, p = 0.019) at 110% inspiration. The average mean dose to the left anterior descending artery (LAD) was 19.9 Gy (2.4 to 46.4 Gy), 8.6 Gy (2.0 to 43.8 Gy, p < 0.001), 7.2 Gy (1.9 to 40.1 Gy, p = 0.035), 6.5 Gy (1.8 to 34.7 Gy), and 5.3 Gy (1.5 to 31.5 Gy, p < 0.001), correspondingly. This novel method enables numerous anatomical situations to be mimicked and quantifies the dosimetric effect they have on a treatment plan.

  20. Cardiac dosimetric evaluation of deep inspiration breath-hold level variances using computed tomography scans generated from deformable image registration displacement vectors

    Energy Technology Data Exchange (ETDEWEB)

    Harry, Taylor [Department of Radiation Medicine and Applied Sciences, University of California San Diego, La Jolla, CA (United States); Department of Radiation Medicine, Oregon Health and Science University, Portland, OR (United States); Department of Nuclear Engineering and Radiation Health Physics, Oregon State University, Corvallis, OR (United States); Rahn, Doug; Semenov, Denis [Department of Radiation Medicine and Applied Sciences, University of California San Diego, La Jolla, CA (United States); Gu, Xuejun [Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, TX (United States); Yashar, Catheryn; Einck, John [Department of Radiation Medicine and Applied Sciences, University of California San Diego, La Jolla, CA (United States); Jiang, Steve [Department of Radiation Oncology, University of Texas Southwestern Medical Center, Dallas, TX (United States); Cerviño, Laura, E-mail: lcervino@ucsd.edu [Department of Radiation Medicine and Applied Sciences, University of California San Diego, La Jolla, CA (United States)

    2016-04-01

    There is a reduction in cardiac dose for left-sided breast radiotherapy during treatment with deep inspiration breath-hold (DIBH) when compared with treatment with free breathing (FB). Various levels of DIBH may occur for different treatment fractions. Dosimetric effects due to this and other motions are a major component of uncertainty in radiotherapy in this setting. Recent developments in deformable registration techniques allow displacement vectors between various temporal and spatial patient representations to be digitally quantified. We propose a method to evaluate the dosimetric effect to the heart from variable reproducibility of DIBH by using deformable registration to create new anatomical computed tomography (CT) scans. From deformable registration, 3-dimensional deformation vectors are generated with FB and DIBH. The obtained deformation vectors are scaled to 75%, 90%, and 110% and are applied to the reference image to create new CT scans at these inspirational levels. The scans are then imported into the treatment planning system and dose calculations are performed. The average mean dose to the heart was 2.5 Gy (0.7 to 9.6 Gy) at FB, 1.2 Gy (0.6 to 3.8 Gy, p < 0.001) at 75% inspiration, 1.1 Gy (0.6 to 3.1 Gy, p = 0.004) at 90% inspiration, 1.0 Gy (0.6 to 3.0 Gy) at 100% inspiration or DIBH, and 1.0 Gy (0.6 to 2.8 Gy, p = 0.019) at 110% inspiration. The average mean dose to the left anterior descending artery (LAD) was 19.9 Gy (2.4 to 46.4 Gy), 8.6 Gy (2.0 to 43.8 Gy, p < 0.001), 7.2 Gy (1.9 to 40.1 Gy, p = 0.035), 6.5 Gy (1.8 to 34.7 Gy), and 5.3 Gy (1.5 to 31.5 Gy, p < 0.001), correspondingly. This novel method enables numerous anatomical situations to be mimicked and quantifies the dosimetric effect they have on a treatment plan.