Two-Crucible Czochralski Process

Science.gov (United States)

Fiegl, G.; Torbet, W.

1985-01-01

Scheme for continuous melt replenishment increases capacity of Czochralski crystal-growing furnace. Replenishing and drawing crucibles of improved Czochralski apparatus connected by heated quartz siphon. When doped silicon added to replenishing crucible, liquid silicon flows into drawing crucible, equalizing two melt levels. Addition of new material automatically controlled in response to optically sensed melt level. Results of this semicontinuous operation higher production speed, lower cost, and good control of crystal quality.

Lifetime degradation of n-type Czochralski silicon after hydrogenation

Science.gov (United States)

Vaqueiro-Contreras, M.; Markevich, V. P.; Mullins, J.; Halsall, M. P.; Murin, L. I.; Falster, R.; Binns, J.; Coutinho, J.; Peaker, A. R.

2018-04-01

Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys. Status Solidi RRL 11, 1700133 (2017)] that hydrogenation of n-type silicon slices containing relatively large concentrations of carbon and oxygen impurity atoms {[Cs] ≥ 1 × 1016 cm-3 and [Oi] ≥ 1017 cm-3} can produce a family of C-O-H defects, which act as powerful recombination centres reducing the minority carrier lifetime. In this work, evidence of the silicon's lifetime deterioration after hydrogen injection from SiNx coating, which is widely used in solar cell manufacturing, has been obtained from microwave photoconductance decay measurements. We have characterised the hydrogenation induced deep level defects in n-type Czochralski-grown Si samples through a series of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), and high-resolution Laplace DLTS/MCTS measurements. It has been found that along with the hydrogen-related hole traps, H1 and H2, in the lower half of the gap reported by us previously, hydrogenation gives rise to two electron traps, E1 and E2, in the upper half of the gap. The activation energies for electron emission from the E1 and E2 trap levels have been determined as 0.12, and 0.14 eV, respectively. We argue that the E1/H1 and E2/H2 pairs of electron/hole traps are related to two energy levels of two complexes, each incorporating carbon, oxygen, and hydrogen atoms. Our results show that the detrimental effect of the C-O-H defects on the minority carrier lifetime in n-type Si:O + C materials can be very significant, and the carbon concentration in Czochralski-grown silicon is a key parameter in the formation of the recombination centers.

Hydrogen diffusion at moderate temperatures in p-type Czochralski silicon

International Nuclear Information System (INIS)

Huang, Y.L.; Ma, Y.; Job, R.; Ulyashin, A.G.

2004-01-01

In plasma-hydrogenated p-type Czochralski silicon, rapid thermal donor (TD) formation is achieved, resulting from the catalytic support of hydrogen. The n-type counter doping by TD leads to a p-n junction formation. A simple method for the indirect determination of the diffusivity of hydrogen via applying the spreading resistance probe measurements is presented. Hydrogen diffusion in silicon during both plasma hydrogenation and post-hydrogenation annealing is investigated. The impact of the hydrogenation duration, annealing temperature, and resistivity of the silicon wafers on the hydrogen diffusion is discussed. Diffusivities of hydrogen are determined in the temperature range 270-450 deg. C. The activation energy for the hydrogen diffusion is deduced to be 1.23 eV. The diffusion of hydrogen is interpreted within the framework of a trap-limited diffusion mechanism. Oxygen and hydrogen are found to be the main traps

Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

International Nuclear Information System (INIS)

Slugen, V.; Harmatha, L.; Tapajna, M.; Ballo, P.; Pisecny, P.; Sik, J.; Koegel, G.; Krsjak, V.

2006-01-01

Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Brett Hallam

2017-12-01

Full Text Available This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

Silicon Crystal Growth by the Electromagnetic Czochralski (EMCZ) Method

Science.gov (United States)

Watanabe, Masahito; Eguchi, Minoru; Hibiya, Taketoshi

1999-01-01

A new method for growing silicon crystals by using electromagnetic force to rotate the melt without crucible rotation has been developed. We call it electromagnetic Czochralski (EMCZ) growth. An electromagnetic force in the azimuthal direction is generated in the melt by the interaction between an electric current (I) through the melt in the radial direction and a vertical magnetic field (B). The rotation rate (ωm) of the silicon melt is continuously changed from 0 to over 105 rpm under I = 0 to 8 A and B = 0 to 0.1 T. Thirty-mm-diameter silicon single crystals free of dislocations could be grown under two conditions: I = 2.0 A and B = 0.05 T (ωm = 105 rpm); and I =0.2 A and B = 0.1 T (ωm = 15 rpm). The oxygen concentration in the crystals was 8 ×1017 atoms/cm3 for the high rotation rate and 1×1017 atoms/cm3 for the low rotation rate. The oxygen-concentration distributions in the radial direction in both crystals were more homogeneous than those in the crystals grown by conventional CZ and/or MCZ growth. This new crystal-growth method can be easily adopted for growing large-diameter silicon crystals.

Defects in Czochralski-grown silicon crystals investigated by positron annihilation

Energy Technology Data Exchange (ETDEWEB)

Ikari, Atsushi; Kawakami, Kazuto; Haga, Hiroyo [Nippon Steel Corp., Sagamihara, Kanagawa (Japan). Electronics Research Labs.; Uedono, Akira; Wei, Long; Kawano, Takao; Tanigawa, Shoichiro

1994-10-01

Positron lifetime and Doppler broadening experiments were performed on Czochralski-grown silicon crystals. A monoenergetic positron beam was also used to measure the diffusion length of positrons in the wafer. From the measurements, it was observed that the value of diffusion length of positrons decreased at the region where microdefects were formed during the crystal growth process. It was also found that the line shape parameter S decreased and the lifetime of positrons increased at the region. These results can be attributed to the annihilation of positrons trapped by vacancy oxygen complexes which are formed in association with the microdefects. (author).

Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

Science.gov (United States)

Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

2018-04-01

Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

Silicon detectors

International Nuclear Information System (INIS)

Klanner, R.

1984-08-01

The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

Numerical simulation of the forced convection in silicon growth by the Czochralski's method

International Nuclear Information System (INIS)

Scalvi, L.V.A.; Mokross, B.J.; Zago, J.V.

1987-01-01

A numerical simulation of the Czochralski configuration for liquid silicon is done by solving the Navier-Stokes equations by the finite element technique. Galerkin's formulation is used with quadratic approximations for the components of the velocity and linear ones for the pressure. The results are discussed for different combinations of crystal-crucible rotations, considering in each case the effect of the velocity distribution on the impurity and/or dopand incorporation in the crystal. (auhor) [pt

Two-dimensional analysis of axial segregation in batchwise and continuous Czochralski process

Science.gov (United States)

Hoe Wang, Jong; Hyun Kim, Do; Yoo, Hak-Do

1999-03-01

Transient two-dimensional convection-diffusion model has been developed to simulate the segregation phenomena in batchwise and continuous Czochralski process. Numerical simulations have been performed using the finite element method and implicit Euler time integration. The mesh deformation due to the change of the melt depth in batchwise Czochralski process was considered. Experimental values of the growth and system parameters for Czochralski growth of boron-doped, 4-in silicon single crystal were used in the numerical calculations. The experimental axial segregation in batchwise Czochralski process can be described successfully using convection-diffusion model. It has been demonstrated with this model that silicon single crystal with uniform axial dopant concentration can be grown and radial segregation can be suppressed in the continuous Czochralski process.

LSA Large Area Silicon Sheet Task. Continuous Liquid Feed Czochralski Growth. [for solar cell fabrication

Science.gov (United States)

Fiegl, G.

1979-01-01

The design and development of equipment and processes to demonstrate continuous growth of crystals by the Czochralski method suitable for producing single silicon crystals for use in solar cells is presented. The growth of at least 150 kg of mono silicon crystal, 150 mm in diameter is continuous from one growth container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a meltdown system with a continuous solid silicon feed mechanism and a liquid transfer system, with associated automatic feedback controls is discussed. Due to the silicon monoxide build up in the furnace and its retarding effect on crystal growth the furnace conversion for operation in the low pressure range is described. Development of systems for continuous solid recharging of the meltdown chamber for various forms of poly silicon is described.

Czochralski method of growing single crystals. State-of-art

International Nuclear Information System (INIS)

Bukowski, A.; Zabierowski, P.

1999-01-01

Modern Czochralski method of single crystal growing has been described. The example of Czochralski process is given. The advantages that caused the rapid progress of the method have been presented. The method limitations that motivated the further research and new solutions are also presented. As the example two different ways of the technique development has been described: silicon single crystals growth in the magnetic field; continuous liquid feed of silicon crystals growth. (author)

Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

Energy Technology Data Exchange (ETDEWEB)

Chen, Jiahe; Yang, Deren [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou (China)

2009-07-01

Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect in Cz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

LSA Large Area Silicon Sheet Task Continuous Liquid Feed Czochralski Growth

Science.gov (United States)

Fiegl, G.

1979-01-01

A process for the continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells was studied. Continuous growth is the growth of 100 Kg of single silicon crystals, 10 cm in diameter, from one container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a melt-down system and a liquid transfer mechanism, with associated automatic feedback controls was developed. Elements of the transfer system were further developed and tested during actual transfer runs. Considerable simplification of the heating element of the transfer tube was achieved. Accuracy and reliability of the temperature sensor, which is part of the power input control system for the transfer tube, was improved. Electrical and thermal effectiveness were increased while assembly of the transfer tube system was further simplified.

Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

International Nuclear Information System (INIS)

Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

2015-01-01

Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

Characterization of oxygen dimer-enriched silicon detectors

CERN Document Server

Boisvert, V; Moll, M; Murin, L I; Pintilie, I

2005-01-01

Various types of silicon material and silicon p+n diodes have been treated to increase the concentration of the oxygen dimer (O2i) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 °C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.

Spiral silicon drift detectors

International Nuclear Information System (INIS)

Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

1988-01-01

An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

Silicon Sensor and Detector Developments for the CMS Tracker Upgrade

CERN Document Server

D'Alessandro, Raffaello

2011-01-01

CMS started a campaign to identify the future silicon sensor technology baseline for a new Tracker for the high-luminosity phase of LHC, coupled to a new effective way of providing tracking information to the experiment trigger. To this end a large variety of 6'' wafers was acquired in different thicknesses and technologies at HPK and new detector module designs were investigated. Detector thicknesses ranging from 50$\\mu$m to 300$\\mu$m are under investigation on float zone, magnetic Czochralski and epitaxial material both in n-in-p and p-in-n versions. P-stop and p-spray are explored as isolation technology for the n-in-p type sensors as well as the feasibility of double metal routing on 6'' wafers. Each wafer contains different structures to answer different questions, e.g. influence of geometry, Lorentz angle, radiation tolerance, annealing behaviour, validation of read-out schemes. Dedicated process test-structures, as well as diodes, mini-sensors, long and very short strip sensors and real pixel sensors ...

Combined effects of crucible geometry and Marangoni convection on silicon Czochralski crystal growth

Energy Technology Data Exchange (ETDEWEB)

Mokhtari, F. [Unit of Developpement of Silicon Technologie, Algiers (Algeria); Bouabdallah, A.; Zizi, M. [LTSE Laboratory, University of Science and Technology USTHB., Babezzouar, Algiers (Algeria); Hanchi, S. [UER Mecanique/ E.M.P/ B.P, El Bahri/Alger (Algeria); Alemany, A. [Laboratoire EPM, CNRS, Grenoble (France)

2009-08-15

In order to understand the influence of crucible geometry combined with natural convection and Marangoni convection on melt flow pattern, temperature and pressure fields in silicon Czochralski crystal growth process, a set of numerical simulations was conducted. We carry out calculation enable us to determine temperature, pressure and velocity fields in function of Grashof and Marangoni numbers. The essential results show that the hemispherical geometry of crucible seems to be adapted for the growth of a good quality crystal and the pressure field is strongly affected by natural and Marangoni convection and it is more sensitive than temperature. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Denuded zone in Czochralski silicon wafer with high carbon content

International Nuclear Information System (INIS)

Chen Jiahe; Yang Deren; Ma Xiangyang; Que Duanlin

2006-01-01

The thermal stability of the denuded zone (DZ) created by high-low-high-temperature annealing in high carbon content (H[C]) and low carbon content (L[C]) Czochralski silicon (Cz-Si) has been investigated in a subsequent ramping and isothermal 1050 deg. C annealing. The tiny oxygen precipitates which might occur in the DZ were checked. It was found in the L[C] Cz-Si that the DZ shrank and the density of bulk micro-defects (BMDs) reduced with the increase of time spent at 1050 deg. C. Also, the DZs above 15 μm of thickness present in the H[C] Cz-Si wafers continuously and the density and total volume of BMDs first decreased then increased and finally decreased again during the treatments. Moreover, tiny oxygen precipitates were hardly generated inside the DZs, indicating that H[C] Cz-Si wafers could support the fabrication of integrated circuits

Denuded zone in Czochralski silicon wafer with high carbon content

Science.gov (United States)

Chen, Jiahe; Yang, Deren; Ma, Xiangyang; Que, Duanlin

2006-12-01

The thermal stability of the denuded zone (DZ) created by high-low-high-temperature annealing in high carbon content (H[C]) and low carbon content (L[C]) Czochralski silicon (Cz-Si) has been investigated in a subsequent ramping and isothermal 1050 °C annealing. The tiny oxygen precipitates which might occur in the DZ were checked. It was found in the L[C] Cz-Si that the DZ shrank and the density of bulk micro-defects (BMDs) reduced with the increase of time spent at 1050 °C. Also, the DZs above 15 µm of thickness present in the H[C] Cz-Si wafers continuously and the density and total volume of BMDs first decreased then increased and finally decreased again during the treatments. Moreover, tiny oxygen precipitates were hardly generated inside the DZs, indicating that H[C] Cz-Si wafers could support the fabrication of integrated circuits.

A versatile Czochralski crystal growth system with automatic diameter control

Science.gov (United States)

Aggarwal, M. D.; Metzl, R.; Wang, W. S.; Choi, J.

1995-07-01

A versatile Czochralski crystal pulling system with automatic diameter control for the growth of nonlinear optical oxide crystals is discussed. Pure and doped bulk single crystals of bismuth silicon oxide (Bi12SiO20) have been successfully grown using this system. The system consists of a regular Czochralski type pulling system with provision for continuous weighing of the growing crystal to provide feedback for power control.

Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

International Nuclear Information System (INIS)

Jung, Y. J.; Kim, W. K.; Jung, J. H.

2014-01-01

The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

Energy Technology Data Exchange (ETDEWEB)

Jung, Y. J.; Kim, W. K.; Jung, J. H. [Yeungnam University, Gyeongsan (Korea, Republic of)

2014-08-15

The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

Science.gov (United States)

Yoon, Yohan; Yan, Yixin; Ostrom, Nels P.; Kim, Jinwoo; Rozgonyi, George

2012-11-01

Continuous-Czochralski (c-Cz) crystal growth has been suggested as a viable technique for the fabrication of photovoltaic Si wafers due to its low resistivity variation of any dopant, independent of segregation, compared to conventional Cz. In order to eliminate light induced degradation due to boron-oxygen traps in conventional p-type silicon wafers, gallium doped wafers have been grown by c-Cz method and investigated using four point probe, deep level transient spectroscopy (DLTS), and microwave-photoconductance decay. Iron-gallium related electrically active defects were identified using DLTS as the main lifetime killers responsible for reduced non-uniform lifetimes in radial and axial positions of the c-Cz silicon ingot. A direct correlation between minority carrier lifetime and the concentration of electrically active Fe-Ga pairs was established.

Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

Science.gov (United States)

Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

2009-01-01

Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

Undepleted silicon detectors

International Nuclear Information System (INIS)

Rancoita, P.G.; Seidman, A.

1985-01-01

Large-size silicon detectors employing relatively low resistivity material can be used in electromagnetic calorimetry. They can operate in strong magnetic fields, under geometric constraints and with microstrip detectors a high resolution can be achieved. Low noise large capacitance oriented electronics was developed to enable good signal-to-noise ratio for single relativistic particles traversing large area detectors. In undepleted silicon detectors, the charge migration from the field-free region has been investigated by comparing the expected peak position (from the depleted layer only) of the energy-loss of relativistic electrons with the measured one. Furthermore, the undepleted detectors have been employed in a prototype of Si/W electromagnetic colorimeter. The sensitive layer was found to be systematically larger than the depleted one

Signal development in irradiated silicon detectors

CERN Document Server

Kramberger, Gregor; Mikuz, Marko

2001-01-01

This work provides a detailed study of signal formation in silicon detectors, with the emphasis on detectors with high concentration of irradiation induced defects in the lattice. These defects give rise to deep energy levels in the band gap. As a consequence, the current induced by charge motion in silicon detectors is signifcantly altered. Within the framework of the study a new experimental method, Charge correction method, based on transient current technique (TCT) was proposed for determination of effective electron and hole trapping times in irradiated silicon detectors. Effective carrier trapping times were determined in numerous silicon pad detectors irradiated with neutrons, pions and protons. Studied detectors were fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities. Measured effective carrier trapping times were found to be inversely proportional to fuence and increase with temperature. No dependence on silicon resistivity and oxygen concentration was observ...

P-type silicon drift detectors

International Nuclear Information System (INIS)

Walton, J.T.; Krieger, B.; Krofcheck, D.; O'Donnell, R.; Odyniec, G.; Partlan, M.D.; Wang, N.W.

1995-06-01

Preliminary results on 16 CM 2 , position-sensitive silicon drift detectors, fabricated for the first time on p-type silicon substrates, are presented. The detectors were designed, fabricated, and tested recently at LBL and show interesting properties which make them attractive for use in future physics experiments. A pulse count rate of approximately 8 x l0 6 s -1 is demonstrated by the p-type silicon drift detectors. This count rate estimate is derived by measuring simultaneous tracks produced by a laser and photolithographic mask collimator that generates double tracks separated by 50 μm to 1200 μm. A new method of using ion-implanted polysilicon to produce precise valued bias resistors on the silicon drift detectors is also discussed

Study on Silicon detectors

International Nuclear Information System (INIS)

Gervino, G.; Boero, M.; Manfredotti, C.; Icardi, M.; Gabutti, A.; Bagnolatti, E.; Monticone, E.

1990-01-01

Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm 2 ), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon

Science.gov (United States)

Ueki, Takemi; Itsumi, Manabu; Takeda, Tadao

1998-04-01

We analyzed the side-wall structure of grown-in octahedral defects in Czochralski silicon standard wafers for large-scale integrated circuits. There are two types of twin octahedral defects: an overlapping type and an adjacent type. In the twin octahedral defects of the overlapping type, a hole is formed in the connection part. The side-wall layer in the hole part is formed continually and is the same thickness as the side-wall layers of both octahedrons. In the twin octahedral defects of the adjacent type, a partition layer is formed in the connection part. Our electron energy-loss spectroscopy analyses identified that the side-wall layer includes SiO2.

Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

International Nuclear Information System (INIS)

Pacifico, Nicola; Dolenc Kittelmann, Irena; Fahrer, Manuel; Moll, Michael; Militaru, Otilia

2011-01-01

Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280Ωcm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8×10 15 /cm 2 . The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

Radiation Hardening of Silicon Detectors

CERN Multimedia

Leroy, C; Glaser, M

2002-01-01

%RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

The solenoidal detector collaboration silicon detector system

International Nuclear Information System (INIS)

Ziock, H.J.; Gamble, M.T.; Miller, W.O.; Palounek, A.P.T.; Thompson, T.C.

1992-01-01

Silicon tracking systems (STS) will be fundamental components of the tracking systems for both planned major SSC experiments. The STS is physically a small part of the central tracking system and the calorimeter of the detector being proposed by the Solenoidal Detector Collaboration (SDC). Despite its seemingly small size, it occupies a volume of more than 5 meters in length and 1 meter in diameter and is an order of magnitude larger than any silicon detector system previously built. The STS will consist of silicon microstrip detectors and possibly silicon pixel detectors. The other two components are an outer barrel tracker, which will consist of straw tubes or scintillating fibers; and an outer intermediate angle tracker, which will consist of gas microstrips. The components are designed to work as an integrated system. Each componenet has specific strengths, but is individually incapable of providing the overall performance required by the physics goals of the SSC. The large particle fluxes, the short times between beam crossing, the high channel count, and the required very high position measurement accuracy pose challenging problems that must be solved. Furthermore, to avoid degrading the measurements, the solutions must be achieved using only a minimal amount of material. An additional constraint is that only low-Z materials are allowed. If that were not difficlut enough, the solutions must also be affordable

Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

Energy Technology Data Exchange (ETDEWEB)

Pacifico, Nicola, E-mail: nicola.pacifico@cern.ch [CERN, Geneva (Switzerland); Dolenc Kittelmann, Irena; Fahrer, Manuel; Moll, Michael [CERN, Geneva (Switzerland); Militaru, Otilia [UCL, Louvain (Belgium)

2011-12-01

Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280{Omega}cm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8 Multiplication-Sign 10{sup 15}/cm{sup 2}. The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

Development of radiation tolerant semiconductor detectors for the Super-LHC

CERN Document Server

Moll, M; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Betta, G F D; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Fretwurst, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Sevilla, S G; Gorelov, I; Goss, J; Bates, A G; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, Roland Paul; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V; Kierstead, J A; Klaiber Lodewigs, J; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, S; Lazanu, I; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li Z; Lindström, G; Linhart, V; Litovchenko, A P; Litovchenko, P G; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Garcia, S Mi; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; OShea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Popule, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

2005-01-01

The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 ...

Integrated double-sided silicon microstrip detectors

Directory of Open Access Journals (Sweden)

Perevertailo V. L.

2011-11-01

Full Text Available The problems of design, technology and manufacturing double-sided silicon microstrip detectors using standard equipment production line in mass production of silicon integrated circuits are considered. The design of prototype high-energy particles detector for experiment ALICE (CERN is presented. The parameters of fabricated detectors are comparable with those of similar foreign detectors, but they are distinguished by lesser cost.

Belle II silicon vertex detector

Energy Technology Data Exchange (ETDEWEB)

Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, Ti.; Baroncelli, To. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Università di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); and others

2016-09-21

The Belle II experiment at the SuperKEKB collider in Japan is designed to indirectly probe new physics using approximately 50 times the data recorded by its predecessor. An accurate determination of the decay-point position of subatomic particles such as beauty and charm hadrons as well as a precise measurement of low-momentum charged particles will play a key role in this pursuit. These will be accomplished by an inner tracking device comprising two layers of pixelated silicon detector and four layers of silicon vertex detector based on double-sided microstrip sensors. We describe herein the design, prototyping and construction efforts of the Belle-II silicon vertex detector.

Silicon Detectors-Tools for Discovery in Particle Physics

International Nuclear Information System (INIS)

Krammer, Manfred

2009-01-01

Since the first application of Silicon strip detectors in high energy physics in the early 1980ies these detectors have enabled the experiments to perform new challenging measurements. With these devices it became possible to determine the decay lengths of heavy quarks, for example in the fixed target experiment NA11 at CERN. In this experiment Silicon tracking detectors were used for the identification of particles containing a c-quark. Later on, the experiments at the Large Electron Positron collider at CERN used already larger and sophisticated assemblies of Silicon detectors to identify and study particles containing the b-quark. A very important contribution to the discovery of the last of the six quarks, the top quark, has been made by even larger Silicon vertex detectors inside the experiments CDF and D0 at Fermilab. Nowadays a mature detector technology, the use of Silicon detectors is no longer restricted to the vertex regions of collider experiments. The two multipurpose experiments ATLAS and CMS at the Large Hadron Collider at CERN contain large tracking detectors made of Silicon. The largest is the CMS Inner Tracker consisting of 200 m 2 of Silicon sensor area. These detectors will be very important for a possible discovery of the Higgs boson or of Super Symmetric particles. This paper explains the first applications of Silicon sensors in particle physics and describes the continuous development of this technology up to the construction of the state of the art Silicon detector of CMS.

Silicon vertex detector for superheavy elements identification

Directory of Open Access Journals (Sweden)

Bednarek A.

2012-07-01

Full Text Available Silicon vertex detector for superheavy elements (SHE identification has been proposed. It will be constructed using very thin silicon detectors about 5 μm thickness. Results of test of 7.3 μm four inch silicon strip detector (SSD with fission fragments and α particles emitted by 252Cf source are presented

A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

Science.gov (United States)

Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

1980-01-01

Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

Centrifugal pumping during Czochralski silicon growth with a strong, non-uniform, axisymmetric magnetic field

Science.gov (United States)

Khine, Y. Y.; Walker, J. S.

1996-08-01

Centrifugal pumping flows are produced in the melt by the rotations of crystal and crucible during the Czochralski growth of silicon crystals. This paper treats the centrifugal pumping effects with a steady, strong, non-uniform axisymmetric magnetic field. We consider a family of magnetic fields ranging from a uniform axial field to a "cusp" field, which has a purely radial field at the crystal-melt interface and free surface. We present the numerical solutions for the centrifugal pumping flows as the magnetic field is changed continuously from a uniform axial field to a cusp one, and for arbitrary Hartmann number. Since the perfect alignment between the local magnetic field vector and the crystal-melt interface or free surface is not likely, we also investigate the effects of a slight misalignment.

Radiation damage studies for the DOe silicon detector

International Nuclear Information System (INIS)

Lehner, Frank

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current DOe silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

International Nuclear Information System (INIS)

Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

2014-01-01

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

Energy Technology Data Exchange (ETDEWEB)

Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

2014-01-20

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

Numerical and experimental study of a solid pellet feed continuous Czochralski growth process for silicon single crystals

Science.gov (United States)

Anselmo, A.; Prasad, V.; Koziol, J.; Gupta, K. P.

1993-07-01

A polysilicon pellets (≅1 mm diameter) feed continuous Czochralski (CCZ) growth process for silicon single crystals is proposed and investigated. Experiments in an industrial puller (14-18 inch diameter crucible) successfully demonstrate the feasibility of this process. The advantages of the proposed scheme are: a steady state growth process, a low aspect ratio melt, uniformity of heat addition and a growth apparatus with single crucible and no baffle(s). The addition of dopant with the solid charge will allow a better control of oxygen concentration leading to crystals of uniform properties and better quality. This paper presents theoretical results on melting of fully and partially immersed silicon spheres and numerical solutions on temperature and flow fields in low aspect ration melts with and without the addition of solid pellets. The theoretical and experimental results obtained thus far show a great promise for the proposed scheme.

Cost of Czochralski wafers as a function of diameter

Science.gov (United States)

Leipold, M. H.; Radics, C.; Kachare, A.

1980-02-01

The impact of diameter in the range of 10 to 15 cm on the cost of wafers sliced from Czochralski ingots was analyzed. Increasing silicon waste and decreasing ingot cost with increasing ingot size were estimated along with projected costs. Results indicate a small but continuous decrease in sheet cost with increasing ingot size in this size range. Sheet costs including silicon are projected to be $50 to $60/sq m (1980 $) depending upon technique used.

Radiation hard cryogenic silicon detectors

International Nuclear Information System (INIS)

Casagrande, L.; Abreu, M.C.; Bell, W.H.; Berglund, P.; Boer, W. de; Borchi, E.; Borer, K.; Bruzzi, M.; Buontempo, S.; Chapuy, S.; Cindro, V.; Collins, P.; D'Ambrosio, N.; Da Via, C.; Devine, S.; Dezillie, B.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Hauler, F.; Heijne, E.; Heising, S.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieuri, V.G.; Paul, S.; Pirollo, S.; Pretzl, K.; Rato, P.; Ruggiero, G.; Smith, K.; Sonderegger, P.; Sousa, P.; Verbitskaya, E.; Watts, S.; Zavrtanik, M.

2002-01-01

It has been recently observed that heavily irradiated silicon detectors, no longer functional at room temperature, 'resuscitate' when operated at temperatures below 130 K. This is often referred to as the 'Lazarus effect'. The results presented here show that cryogenic operation represents a new and reliable solution to the problem of radiation tolerance of silicon detectors

A thermal model for czochralski silicon crystal growth with an axial magnetic field

Science.gov (United States)

Hjellming, L. N.

1990-07-01

This paper presents a thermal model for molten silicon in a Czochralski crystal puller system with an applied uniform axial magnetic field. The melt depth is treated as continually decreasing, which affects the thermal environment of the melt and crystal. The radiative heat loss and the input heat flux are treated as functions of time, with a constraint placed on the heat lost to the crystal from the melt. As the melt motion reaches a steady state rapidly, the temperature and flow fields are treated as instantaneously steady at each melt depth. The heat transport is a mixture of conduction and convection, and by considering the crystal and crucible to be rotating with the same angular velocity, the flows driven by buoyancy and thermocapillarity are isolated and provide the convective heat transport in the melt for the range of magnetic field strengths 0.2 ≤ B ≤ 1.0T.

Silicon drift detectors, present and future prospects

Science.gov (United States)

Takahashi, J.; Bellwied, R.; Beuttenmuller, R.; Caines, H.; Chen, W.; Dyke, H.; Hoffmann, G. W.; Humanic, T.; Kotov, I.; Kuczewski, P.; Leonhardt, W.; Li, Z.; Lynn, D.; Minor, R.; Munhoz, M.; Ott, G.; Pandey, S. U.; Schambach, J.; Soja, R.; Sugarbaker, E.; Willson, R. M.

2001-04-01

Silicon drift detectors provide unambiguous two-dimensional position information for charged particle detection with a single detector layer. A large area silicon drift detector was developed for the inner tracking detector of the STAR experiment at RHIC. In this paper, we discuss the lessons learned and the future prospects of this technology.

Silicon radiation detectors: materials and applications

International Nuclear Information System (INIS)

Walton, J.T.; Haller, E.E.

1982-10-01

Silicon nuclear radiation detectors are available today in a large variety of sizes and types. This profusion has been made possible by the ever increasing quality and diameter silicon single crystals, new processing technologies and techniques, and innovative detector design. The salient characteristics of the four basic detector groups, diffused junction, ion implanted, surface barrier, and lithium drift are reviewed along with the silicon crystal requirements. Results of crystal imperfections detected by lithium ion compensation are presented. Processing technologies and techniques are described. Two recent novel position-sensitive detector designs are discussed - one in high-energy particle track reconstruction and the other in x-ray angiography. The unique experimental results obtained with these devices are presented

Ultra-fast silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

2013-12-01

We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

Silicon Telescope Detectors

CERN Document Server

Gurov, Yu B; Sandukovsky, V G; Yurkovski, J

2005-01-01

The results of research and development of special silicon detectors with a large active area ($> 8 cm^{2}$) for multilayer telescope spectrometers (fulfilled in the Laboratory of Nuclear Problems, JINR) are reviewed. The detector parameters are listed. The production of totally depleted surface barrier detectors (identifiers) operating under bias voltage two to three times higher than depletion voltage is described. The possibility of fabrication of lithium drifted counters with a very thin entrance window on the diffusion side of the detector (about 10--20 $\\mu$m) is shown. The detector fabrication technique has allowed minimizing detector dead regions without degradation of their spectroscopic characteristics and reliability during long time operation in charge particle beams.

Evaluation of prototype silicon drift detectors

International Nuclear Information System (INIS)

Ellison, J.; Hall, G.; Roe, S.; Lucas, A.

1988-01-01

Operating characteristics of several prototypes of silicon drift detectors are investigated. Detectors are made of unpolished silicon produced by the zone melting method and characterized by n-type conductivity and specific resistance of 3.6-4.6 kOhmxcm. The detectors comprise 40 parallel bands of 200 μm width and 1 cm length separated by 50 μm intervals. Data characterizing the potential distribution near anodes under the operating bias voltage, dependences of capacities and leakage as well as the detector space resolution

SVX/silicon detector studies

International Nuclear Information System (INIS)

Bagby, L.; Johnson, M.; Lipton, R.; Gu, W.

1995-11-01

AC coupled silicon detectors, being used for the DO upgrade, may have substantial voltage across the coupling capacitor. Failed capacitors can present ∼50 V to the input of the SVX, Silicon Vertex, device. We measured the effects that failed detector coupling capacitors have on the SVXD (rad soft 3μm), SVXH (rad hard 1.2μm), and SVXIIb (rad soft 1.2μm) amplifier / readout devices. The test results show that neighboring channels saturate when an excessive voltage is applied directly to a SVX channel. We believe that the effects are due to current diffusion within the SVX substrate rather than surface currents on the detectors. This paper discusses the magnitude of the saturation and a possible solution to the problem

Forced and thermocapillary convection in silicon Czochralski crystal growth in semispherical crucible

International Nuclear Information System (INIS)

Mokhtari, F; Bouabdallah, A; Zizi, M; Hanchi, S; Alemany, A

2010-01-01

In order to understand the influence of a semispherical crucible geometry combined with different convection modes as a thermocapillary convection, natural convection and forced convection, induced by crystal rotation, on melt flow pattern in silicon Czochralski crystal growth process, a set of numerical simulations are conducted using Fluent Software. We solve the system of equations of heat and momentum transfer in classical geometry as cylindrical and modified crystal growth process geometry as cylindro-spherical. In addition, we adopt hypothesis adapted to boundary conditions near the interface and calculations are executed to determine temperature, pressure and velocity fields versus Grashof and Reynolds numbers. The analysis of the obtained results led to conclude that there is advantage to modify geometry in comparison with the traditional one. The absence of the stagnation regions of fluid in the hemispherical crucible corner and the possibility to control the melt flow using the crystal rotation enhances the quality of the process comparatively to the cylindrical one. The pressure field is strongly related to the swirl velocity.

Forced and thermocapillary convection in silicon Czochralski crystal growth in semispherical crucible

Energy Technology Data Exchange (ETDEWEB)

Mokhtari, F [Physics Department, Faculty of Science, University of Mouloud Mammeri, Tizi Ouzou (Algeria); Bouabdallah, A; Zizi, M [LTSE Laboratory, University of Science and Technology USTHB. BP 32 Elalia, Babezzouar, Algiers (Algeria); Hanchi, S [UER Mecanique/ E.M.P B.P 17, Bordj El Bahri, Algiers (Algeria); Alemany, A, E-mail: abouab2002@yahoo.f [Laboratoire EPM, CNRS, Grenoble (France)

2010-03-01

In order to understand the influence of a semispherical crucible geometry combined with different convection modes as a thermocapillary convection, natural convection and forced convection, induced by crystal rotation, on melt flow pattern in silicon Czochralski crystal growth process, a set of numerical simulations are conducted using Fluent Software. We solve the system of equations of heat and momentum transfer in classical geometry as cylindrical and modified crystal growth process geometry as cylindro-spherical. In addition, we adopt hypothesis adapted to boundary conditions near the interface and calculations are executed to determine temperature, pressure and velocity fields versus Grashof and Reynolds numbers. The analysis of the obtained results led to conclude that there is advantage to modify geometry in comparison with the traditional one. The absence of the stagnation regions of fluid in the hemispherical crucible corner and the possibility to control the melt flow using the crystal rotation enhances the quality of the process comparatively to the cylindrical one. The pressure field is strongly related to the swirl velocity.

Epitaxial silicon semiconductor detectors, past developments, future prospects

International Nuclear Information System (INIS)

Gruhn, C.R.

1976-01-01

A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized

A data acquisition system for silicon microstrip detectors

International Nuclear Information System (INIS)

Adriani, O.; Civinini, C.; D'Alessandro, R.; Meschini, M.; Pieri, M.; Castellini, G.

1998-01-01

Following initial work on the readout of the L3 silicon microvertex detector, the authors have developed a complete data acquisition system for silicon microstrip detectors for use both in their home institute and at the various test beam facilities at the CERN laboratory. The system uses extensive decoupling schemes allowing a fully floating connection to the detector. This feature has many advantages especially in the readout of the latest double-sided silicon microstrip detectors

The charge collection in silicon strip detectors

International Nuclear Information System (INIS)

Boehringer, T.; Hubbeling, L.; Weilhammer, P.; Kemmer, J.; Koetz, U.; Riebesell, M.; Belau, E.; Klanner, R.; Lutz, G.; Neugebauer, E.; Seebrunner, H.J.; Wylie, A.

1983-02-01

The charge collection in silicon detectors has been studied, by measuring the response to high-energy particles of a 20μm pitch strip detector as a function of applied voltage and magnetic field. The results are well described by a simple model. The model is used to predict the spatial resolution of silicon strip detectors and to propose a detector with optimized spatial resolution. (orig.)

Radiation damage studies for the D0 silicon detector

International Nuclear Information System (INIS)

Lehner, F.

2004-01-01

We report on irradiation studies performed on spare production silicon detector modules for the current D0 silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 10 14 p/cm 2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalization techniques. As a result, we observe roughly 40-50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling

Performance of irradiated silicon microstrip detectors

International Nuclear Information System (INIS)

Catacchini, E.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Lenzi, M.; Meschini, M.; Parrini, G.; Pieri, M.

1999-01-01

Silicon microstrip devices to be installed in Large Hadron Collider (LHC) tracking detectors will have to operate in a high radiation environment. We report on performance studies of silicon microstrip detectors irradiated with neutrons or protons, up to fluences comparable to the first ten years of running at LHC. Obtained results show that irradiated detectors can still be operated with satisfactory signal-to-noise ratio,and in the case of inhomogeneously type inverted detector a very good position resolution is achieved regardless of the zone crossed by the particle

Construction of the CDF silicon vertex detector

International Nuclear Information System (INIS)

Skarha, J.; Barnett, B.; Boswell, C.; Snider, F.; Spies, A.; Tseng, J.; Vejcik, S.; Carter, H.; Flaugher, B.; Gonzales, B.; Hrycyk, M.; Nelson, C.; Segler, S.; Shaw, T.; Tkaczyk, S.; Turner, K.; Wesson, T.; Carithers, W.; Ely, R.; Haber, C.; Holland, S.; Kleinfelder, S.; Merrick, T.; Schneider, O.; Wester, W.; Wong, M.; Amidei, D.; Derwent, P.; Gold, M.; Matthews, J.; Bacchetta, N.; Bisello, D.; Busetto, G.; Castro, A.; Loreti, M.; Pescara, L.; Bedeschi, F.; Bolognesi, V.; Dell'Agnello, S.; Galeotti, S.; Mariotti, M.; Menzione, A.; Punzi, G.; Raffaelli, F.; Risotri, L.; Tartarelli, F.; Turini, N.; Wenzel, H.; Zetti, F.; Bailey, M.; Garfinkel, A.; Shaw, N.; Tipton, P.; Watts, G.

1992-04-01

Technical details and methods used in constructing the CDF silicon vertex detector are presented. This description includes a discussion of the foam-carbon fiber composite structure used to silicon microstrip detectors and the procedure for achievement of 5 μm detector alignment. The construction of the beryllium barrel structure, which houses the detector assemblies, is also described. In addition, the 10 μm placement accuracy of the detectors in the barrel structure is discussed and the detector cooling and mounting systems are described. 12 refs

Study of Silicon Microstrip Detector Properties for the LHCb Silicon Tracker

CERN Document Server

Lois-Gómez, C; Vázquez-Regueiro, P

2006-01-01

The LHCb experiment, at present under construction at the Large Hadron Collider at CERN, has been designed to perform high-precision measurements of CP violating phenomena and rare decays in the B meson systems. The need of a good tracking performance and the high density of particles close to the beam pipe lead to the use of silicon microstrip detectors in a significant part of the LHCb tracking system. The Silicon Tracker (ST) will be built using p-on-n silicon detectors with strip pitches of approximately 200 $\\mu$m and readout strips up to 38 cm in length. This thesis describes the tests carried out on silicon microstrip detectors for the ST, starting from the characterization of different prototypes up to the final tests on the detectors that are being installed at CERN. The results can be divided in three main blocks. The first part comprises an exhaustive characterization of several prototype sensors selected as suitable candidates for the detector and was performed in order to decide some design param...

REVIEW ARTICLE: Oxygen diffusion and precipitation in Czochralski silicon

Science.gov (United States)

Newman, R. C.

2000-06-01

The objective of this article is to review our understanding of the properties of oxygen impurities in Czochralski silicon that is used to manufacture integrated circuits (ICs). These atoms, present at a concentration of ~1018 cm-3, occupy bond-centred sites (Oi) in as-grown Si and the jump rate between adjacent sites defines `normal' diffusion for the temperature range 1325 - 330 °C. Anneals at high temperatures lead to the formation of amorphous SiO2 precipitates that act as traps for fast diffusing metallic contaminants, such as Fe and Cu, that may be inadvertently introduced at levels as low as 1011 cm-3. Without this `gettering', there may be severe degradation of fabricated ICs. To accommodate the local volume increase during oxygen precipitation, there is parallel generation of self-interstitials that diffuse away and form lattice defects. High temperature (T > 700 °C) anneals are now well understood. Details of lower temperature processes are still a matter of debate: measurements of oxygen diffusion into or out of the Si surface and Oi atom aggregation have implied enhanced diffusion that has variously been attributed to interactions of Oi atoms with lattice vacancies, self-interstitials, metallic elements, carbon, hydrogen impurities etc. There is strong evidence for oxygen-hydrogen interactions at T continue to decrease as the size of future device features decreases below the lower end of the sub-micron range, currently close to 0.18 µm.

Thermal Properties of the Silicon Microstrip Endcap Detector

CERN Document Server

Feld, Lutz; Hammarström, R

1998-01-01

Irradiated silicon detectors must be cooled in order to guarantee stable short and long term operation. Using the SiF1 milestone prototype we have performed a detailed analysis of the thermal properties of the silicon microstrip endcap detector. The strongest constraint on the cooling system is shown to be set by the need to avoid thermal runaway of the silicon detectors. We show that, taking into account the radiation damage to the silicon after 10 years of LHC operation and including some safety margin, the detector will need a cooling fluid temperature of around -20 C. The highest temperature on the silicon will then be in the range -15 C to -10 C. This sets an upper limit on the ambient temperature in the tracker volume.

Buoyant convection during Czochralski silicon growth with a strong, non-uniform, axisymmetric magnetic field

Science.gov (United States)

Khine, Y. Y.; Walker, J. S.

1995-02-01

This paper treats the buoyant convection during the Czochralski growth of silicon crystals with a steady, strong, non-uniform, axisymmetric magnetic field. We consider a family of magnetic fields which includes a uniform axial magnetic field and a "cusp" field which is produced by identical solenoids placed symmetrically above and below the plane of the crystal-melt interface and free surface. We investigate the evolution of the buoyant convection as the magnetic field is changed continuously from a uniform axial field to a cusp field, with a constant value of the root-mean-squared magnetic flux density in the melt. We also investigate changes as the magnetic flux density is increased. While the cusp field appears very promising, perfect alignment between the local magnetic field vector and the crystal-melt interface or free surface is not possible, so the effects of a slight misalignment are also investigated.

Efficiency measurements for 3D silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Parzefall, Ulrich, E-mail: ulrich.parzefall@physik.uni-freiburg.d [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Dalla Betta, Gian-Franco [INFN Trento and Universita di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Boscardin, Maurizio [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Koehler, Michael; Kuehn, Susanne; Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris; Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Zoboli, Andrea [INFN Trento and Universita di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

2010-11-01

Silicon strip detectors are widely used as part of the inner tracking layers in particle physics experiments. For applications at the luminosity upgrade of the Large Hadron Collider (LHC), the sLHC, silicon detectors with extreme radiation hardness are required. The 3D detector design, where electrodes are processed from underneath the strips into the silicon bulk material, provides a way to enhance the radiation tolerance of standard planar silicon strip detectors. Detectors with several innovative 3D designs that constitute a simpler and more cost-effective processing than the 3D design initially proposed were connected to read-out electronics from LHC experiments and subsequently tested. Results on the amount of charge collected, the noise and the uniformity of charge collection are given.

Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

International Nuclear Information System (INIS)

Walton, J.T.; Hong, W.S.; Luke, P.N.; Wang, N.W.; Ziemba, F.P.

1996-01-01

Results on the characterization of the electrical properties of amorphous silicon films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. The results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated

The Solenoidal Detector Collaboration silicon detector system

International Nuclear Information System (INIS)

Ziock, H.J.; Gamble, M.T.; Miller, W.O.; Palounek, A.P.T.; Thompson, T.C.

1992-01-01

Silicon tracking systems will be fundamental components of the tracking systems for both planned major SSC experiments. Despite its seemingly small size, it occupies a volume of more than 5 meters in length and 1 meter in diameter and is an order of magnitude larger than any silicon detector system previously built. This report discusses its design and operation

Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth. II - Processing strategies

Science.gov (United States)

Derby, J. J.; Brown, R. A.

1986-01-01

The pseudosteady-state heat transfer model developed in a previous paper is augmented with constraints for constant crystal radius and melt/solid interface deflection. Combinations of growth rate, and crucible and bottom-heater temperatures are tested as processing parameters for satisfying the constrained thermal-capillary problem over a range of melt volumes corresponding to the sequence occuring during the batchwise Czochralski growth of a small-diameter silicon crystal. The applicability of each processing strategy is judged by the range of existence of the solution, in terms of melt volume and the values of the axial and radial temperature gradients in the crystal.

The two sides of silicon detectors

International Nuclear Information System (INIS)

Devine, S.R.

2001-10-01

Results are presented on in situ irradiation of silicon detector's at cryogenic temperature. The results show that irradiation at cryogenic temperatures does not detrimentally effect a silicon detectors performance when compared to its irradiation at room temperature. Operation of silicon devices at cryogenic temperatures offers the advantage of reducing radiation-induced leakage current to levels of a few pA, while at 130K the Lazarus Effect plays an important role i.e. minimum voltage required for full depletion. Performing voltage scans on a 'standard' silicon pad detector pre- and post annealing, the charge collection efficiency was found to be 60% at 200V and 95% at 200V respectively. Time dependence measurements are presented, showing that for a dose of 6.5x10 14 p/cm 2 (450GeV protons) the time dependence of the charge collection efficiency is negligible. However, for higher doses, 1.2x10 15 p/cm 2 , the charge collection efficiency drops from an initial measured value of 67% to a stable value of 58% over a period of 15 minutes for reversed biased diodes. An analysis of the 'double junction' effect is also presented. A comparison between the Transient Current Technique and an X-ray technique is presented. The double junction has been observed in p + /n/n + silicon detectors after irradiation beyond 'type inversion', corresponding to a fluence equivalent to ∼3x10 13 cm -2 1MeV neutrons, producing p + /p/n + and essentially two p-n junctions within one device. With increasing bias voltage, as the electric field is extending into the detector bulk from opposite sides of the silicon detector, there are two distinct depletion regions that collect charge signal independently. Summing the signal charge from the two regions, one is able to reconstruct the initial energy of the incident particle. From Transient Current measurements it is apparent that E-field manipulation is possible by excess carrier injection, enabling a high enough E-field to extend across the

Silicon Detectors for PET and SPECT

Science.gov (United States)

Cochran, Eric R.

Silicon detectors use state-of-the-art electronics to take advantage of the semiconductor properties of silicon to produce very high resolution radiation detectors. These detectors have been a fundamental part of high energy, nuclear, and astroparticle physics experiments for decades, and they hold great potential for significant gains in both PET and SPECT applications. Two separate prototype nuclear medicine imaging systems have been developed to explore this potential. Both devices take advantage of the unique properties of high resolution pixelated silicon detectors, designed and developed as part of the CIMA collaboration and built at The Ohio State University. The first prototype is a Compton SPECT imaging system. Compton SPECT, also referred to as electronic collimation, is a fundamentally different approach to single photon imaging from standard gamma cameras. It removes the inherent coupling of spatial resolution and sensitivity in mechanically collimated systems and provides improved performance at higher energies. As a result, Compton SPECT creates opportunities for the development of new radiopharmaceuticals based on higher energy isotopes as well as opportunities to expand the use of current isotopes such as 131I due to the increased resolution and sensitivity. The Compton SPECT prototype consists of a single high resolution silicon detector, configured in a 2D geometry, in coincidence with a standard NaI scintillator detector. Images of point sources have been taken for 99mTc (140 keV), 131I (364keV), and 22Na (511 keV), demonstrating the performance of high resolution silicon detectors in a Compton SPECT system. Filtered back projection image resolutions of 10 mm, 7.5 mm, and 6.7 mm were achieved for the three different sources respectively. The results compare well with typical SPECT resolutions of 5-15 mm and validate the claims of improved performance in Compton SPECT imaging devices at higher source energies. They also support the potential of

Large volume cryogenic silicon detectors

International Nuclear Information System (INIS)

Braggio, C.; Boscardin, M.; Bressi, G.; Carugno, G.; Corti, D.; Galeazzi, G.; Zorzi, N.

2009-01-01

We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm 3 , cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

Spectral response of multi-element silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Ludewigt, B.A.; Rossington, C.S.; Chapman, K. [Univ. of California, Berkeley, CA (United States)

1997-04-01

Multi-element silicon strip detectors, in conjunction with integrated circuit pulse-processing electronics, offer an attractive alternative to conventional lithium-drifted silicon Si(Li) and high purity germanium detectors (HPGe) for high count rate, low noise synchrotron x-ray fluorescence applications. One of the major differences between the segmented Si detectors and the commercially available single-element Si(Li) or HPGe detectors is that hundreds of elements can be fabricated on a single Si substrate using standard silicon processing technologies. The segmentation of the detector substrate into many small elements results in very low noise performance at or near, room temperature, and the count rate of the detector is increased many-fold due to the multiplication in the total number of detectors. Traditionally, a single channel of detector with electronics can handle {approximately}100 kHz count rates while maintaining good energy resolution; the segmented detectors can operate at greater than MHz count rates merely due to the multiplication in the number of channels. One of the most critical aspects in the development of the segmented detectors is characterizing the charge sharing and charge loss that occur between the individual detector strips, and determining how these affect the spectral response of the detectors.

Silicon Drift Detectors - A Novel Technology for Vertex Detectors

Science.gov (United States)

Lynn, D.

1996-10-01

Silicon Drift Detectors (SDD) are novel position sensing silicon detectors which operate in a manner analogous to gas drift detectors. Single SDD's were shown in the CERN NA45 experiment to permit excellent spatial resolution (pseudo-rapidity. Over the last three years we undertook a concentrated R+D effort to optimize the performance of the detector by minimizing the inactive area, the operating voltage and the data volume. We will present test results from several wafer prototypes. The charge produced by the passage of ionizing particles through the bulk of the detectors is collected on segmented anodes, with a pitch of 250 μm, on the far edges of the detector. The anodes are wire-bonded to a thick film multi-chip module which contains preamplifier/shaper chips and CMOS based switched capacitor arrays used as an analog memory pipeline. The ADC is located off-detector. The complete readout chain from the wafer to the DAQ will be presented. Finally we will show physics performance simulations based on the resolution achieved by the SVT prototypes.

Planar silicon sensors for the CMS Tracker upgrade

CERN Document Server

Junkes, Alexandra

2013-01-01

The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfills all requirements for detectors for the high-luminosity phase of the Large Hadron Collider (HL-LHC).A variety of silicon p-in-n and n-in-p test-sensors made from Float Zone, Deep-Diffused FZ and Magnetic Czochralski materials were manufactured by one single industrial producer, thus guaranteeing similar conditions for the production and design of the test-structures. Properties of different silicon materials and design choices have been systematically studied and compared.The samples have been irradiated with 1 MeV neutrons and protons corresponding to maximal fluences as expected for the positions of detector layers in the future tracker. Irradiations with protons of different energies (23 MeV and 23 GeV) have been performed to evaluate the energy dependence of the defect generation in oxygen rich material. All materials have been characterized before an...

Large volume cryogenic silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Braggio, C. [Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35131 Padova (Italy); Boscardin, M. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy); Bressi, G. [INFN sez. di Pavia, via Bassi 6, 27100 Pavia (Italy); Carugno, G.; Corti, D. [INFN sez. di Padova, via Marzolo 8, 35131 Padova (Italy); Galeazzi, G. [INFN lab. naz. Legnaro, viale dell' Universita 2, 35020 Legnaro (Italy); Zorzi, N. [Fondazione Bruno Kessler (FBK), via Sommarive 18, I-38100 Povo (Italy)

2009-12-15

We present preliminary measurements for the development of a large volume silicon detector to detect low energy and low rate energy depositions. The tested detector is a one cm-thick silicon PIN diode with an active volume of 31 cm{sup 3}, cooled to the liquid helium temperature to obtain depletion from thermally-generated free carriers. A thorough study has been done to show that effects of charge trapping during drift disappears at a bias field value of the order of 100V/cm.

Depletion voltage studies on n-in-n MCz silicon diodes after irradiation with 70 MeV protons

CERN Document Server

Holmkvist, William

2014-01-01

Silicon detectors is the main component in the pixel detectors in the ATLAS experiment at CERN in order to detect the particles and recreate their tracks after a proton-proton collision. One criteria on these detectors is to be able to operate in the high radiation field close to the particle collision. The usual behavior of the silicon detectors is that they get type inverted and an increase in the depletion voltage can be seen after exposed to significant amounts of radiation. In contrast n-type Magnetic Czochralski (MCz) silicon doesn’t follow FZ silicons pattern of getting type inverted when it comes to high energy particle irradiation, in the range of GeV. However it was observed that MCz silicon diodes that had been irradiated with 23 MeV protons followed the FZ silicon behavior and did type invert. The aim of the project is to find out how the depletion voltage of MCz silicon changes after being irradiated by 70 MeV at fluencies of 1E13, 1E14 and 5E14 neq/cm2, to give a further insight of at what en...

Microdefects in an as-grown Czochralski silicon crystal studied by synchrotron radiation section topography with aid of computer simulation

International Nuclear Information System (INIS)

Iida, Satoshi; Aoki, Yoshirou; Okitsu, Kouhei; Sugita, Yoshimitsu; Kawata, Hiroshi; Abe, Takao

1998-01-01

Grown-in microdefects of a Czochralski (CZ) silicon crystal grown at a slow growth rate were studied by section topography using high energy synchrotron radiation. Images of the microdefects in the section topographs were analyzed quantitatively using computer simulation based on the Takagi-Taupin type dynamical diffraction theory of X-rays, and reproduced successfully by the simulation when the microdefects were assumed to be spherical strain centers. Sizes and positions of the microdefects were able to be determined by detailed comparison between the experiments and the computer simulations. The validity of the computer simulation in an analysis of the section topographs is discussed. (author)

Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

International Nuclear Information System (INIS)

Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

2015-01-01

The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

Amorphous silicon radiation detectors

Science.gov (United States)

Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

1992-01-01

Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

Small area silicon diffused junction x-ray detectors

International Nuclear Information System (INIS)

Walton, J.T.; Pehl, R.H.; Larsh, A.E.

1981-10-01

The low temperature performance of silicon diffused junction detectors in the measurement of low energy x-rays is reported. The detectors have an area of 0.04 cm 2 and a thickness of 100 μm. The spectral resolutions of these detectors were found to be in close agreement with expected values indicating that the defects introduced by the high temperature processing required in the device fabrication were not deleteriously affecting the detection of low energy x-rays. Device performance over a temperature range of 77 to 150 0 K is given. These detectors were designed to detect low energy x-rays in the presence of minimum ionizing electrons. The successful application of silicon diffused junction technology to x-ray detector fabrication may facilitate the development of other novel silicon x-ray detector designs

Small area silicon diffused junction X-ray detectors

Science.gov (United States)

Walton, J. T.; Pehl, R. H.; Larsh, A. E.

1982-01-01

The low-temperature performance of silicon diffused junction detectors in the measurement of low energy X-rays is reported. The detectors have an area of 0.04 sq cm and a thickness of 100 microns. The spectral resolutions of these detectors were found to be in close agreement with expected values, indicating that the defects introduced by the high-temperature processing required in the device fabrication were not deleteriously affecting the detection of low-energy X-rays. Device performance over a temperature range of 77 K to 150 K is given. These detectors were designed to detect low-energy X-rays in the presence of minimum ionizing electrons. The successful application of silicon-diffused junction technology to X-ray detector fabrication may facilitate the development of other novel silicon X-ray detector designs.

4D tracking with ultra-fast silicon detectors

Science.gov (United States)

F-W Sadrozinski, Hartmut; Seiden, Abraham; Cartiglia, Nicolò

2018-02-01

The evolution of particle detectors has always pushed the technological limit in order to provide enabling technologies to researchers in all fields of science. One archetypal example is the evolution of silicon detectors, from a system with a few channels 30 years ago, to the tens of millions of independent pixels currently used to track charged particles in all major particle physics experiments. Nowadays, silicon detectors are ubiquitous not only in research laboratories but in almost every high-tech apparatus, from portable phones to hospitals. In this contribution, we present a new direction in the evolution of silicon detectors for charge particle tracking, namely the inclusion of very accurate timing information. This enhancement of the present silicon detector paradigm is enabled by the inclusion of controlled low gain in the detector response, therefore increasing the detector output signal sufficiently to make timing measurement possible. After providing a short overview of the advantage of this new technology, we present the necessary conditions that need to be met for both sensor and readout electronics in order to achieve 4D tracking. In the last section, we present the experimental results, demonstrating the validity of our research path.

Development of innovative silicon radiation detectors

CERN Document Server

Balbuena, JuanPablo

Silicon radiation detectors fabricated at the IMB-CNM (CSIC) Clean Room facilities using the most innovative techniques in detector technology are presented in this thesis. TCAD simulation comprises an important part in this work as becomes an essential tool to achieve exhaustive performance information of modelled detectors prior their fabrication and subsequent electrical characterization. Radiation tolerance is also investigated in this work using TCAD simulations through the potential and electric field distributions, leakage current and capacitance characteristics and the response of the detectors to the pass of different particles for charge collection efficiencies. Silicon detectors investigated in this thesis were developed for specific projects but also for applications in experiments which can benefit from their improved characteristics, as described in Chapter 1. Double-sided double type columns 3D (3D-DDTC) detectors have been developed under the NEWATLASPIXEL project in the framework of the CERN ...

Vertically etched silicon nano-rods as a sensitive electron detector

International Nuclear Information System (INIS)

Hajmirzaheydarali, M; Akbari, M; Soleimani-Amiri, S; Sadeghipari, M; Shahsafi, A; Akhavan Farahani, A; Mohajerzadeh, S

2015-01-01

We have used vertically etched silicon nano-rods to realize electron detectors suitable for scanning electron microscopes. The results of deep etching of silicon nano-structures are presented to achieve highly ordered arrays of nano-rods. The response of the electron detector to energy of the primary electron beam and the effects of various sizes and materials has been investigated, indicating its high sensitivity to secondary and back-scattered electrons. The miniaturized structure of this electron detector allows it to be placed in the vicinity of the specimen to improve the resolution and contrast. This detector collects electrons and converts the electron current to voltage directly by means of n-doped silicon nano-rods on a p-type silicon substrate. Silicon nano-rods enhance the surface-to-volume ratio of the detector as well as improving the yield of electron detection. The use of nano-structures and silicon nanowires as an electron detector has led to higher sensitivities than with micro-structures. (paper)

Amorphous silicon ionizing particle detectors

Science.gov (United States)

Street, Robert A.; Mendez, Victor P.; Kaplan, Selig N.

1988-01-01

Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

Silicon photomultiplier as a detector of Cherenkov photons

International Nuclear Information System (INIS)

Korpar, S.; Dolenec, R.; Hara, K.; Iijima, T.; Krizan, P.; Mazuka, Y.; Pestotnik, R.; Stanovnik, A.; Yamaoka, M.

2008-01-01

A novel photon detector-i.e. the silicon photomultiplier-whose main advantage over conventional photomultiplier tubes is the operation in high magnetic fields, has been tested as a photon detector in a proximity focusing RICH with aerogel radiator. This type of RICH counter is proposed for the upgrade of the Belle detector at the KEK B-factory. Recently produced silicon photomultipliers show less noise and have larger size, which are important issues for a large area photon detector. We measured the single photon pulse height distribution, the timing resolution and the position sensitivity for different silicon photomultipliers (Hamamatsu MPPC HC025, HC050, and HC100). The silicon photomultipliers were then used to detect Cherenkov photons emitted by cosmic ray particles in a proximity focusing aerogel RICH. Various light guides were investigated in order to increase the detection efficiency

The ALICE Silicon Pixel Detector System (SPD)

CERN Document Server

Kluge, A; Antinori, Federico; Burns, M; Cali, I A; Campbell, M; Caselle, M; Ceresa, S; Dima, R; Elias, D; Fabris, D; Krivda, Marian; Librizzi, F; Manzari, Vito; Morel, M; Moretto, Sandra; Osmic, F; Pappalardo, G S; Pepato, Adriano; Pulvirenti, A; Riedler, P; Riggi, F; Santoro, R; Stefanini, G; Torcato De Matos, C; Turrisi, R; Tydesjo, H; Viesti, G; PH-EP

2007-01-01

The ALICE silicon pixel detector (SPD) comprises the two innermost layers of the ALICE inner tracker system. The SPD includes 120 detector modules (half-staves) each consisting of 10 ALICE pixel chips bump bonded to two silicon sensors and one multi-chip read-out module. Each pixel chip contains 8192 active cells, so that the total number of pixel cells in the SPD is ≈ 107. The on-detector read-out is based on a multi-chip-module containing 4 ASICs and an optical transceiver module. The constraints on material budget and detector module dimensions are very demanding.

The silicon shower maximum detector for the STIC

International Nuclear Information System (INIS)

Alvsvaag, S.J.; Maeland, O.A.; Klovning, A.

1995-01-01

The structure of a shashlik calorimeter allows the insertion of tracking detectors within the longitudinal sampling to improve the accuracy in the determination of the direction of the showering particle and the e/π separation ability. The new forward calorimeter of the DELPHI detector has been equipped with two planes of silicon pad detectors respectively after 4 and 7.4 radiation lengths. The novelty of these silicon detectors is that to cope with the shashlik readout fibers, they had to incorporate 1.4 mm holes every cm 2 . The detector consists of circular strips with a radial pitch of 1.7 mm and an angular granularity of 22.5 , read out by means of the MX4 preamplifier. The preamplifier is located at 35 cm from the silicon detector and the signal is carried by Kapton cables bonded to the detector. The matching to the MX4 input pitch of 44 μm was made by a specially developed fanin hybrid. (orig.)

ALICE Silicon Strip Detector

CERN Multimedia

Nooren, G

2013-01-01

The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

Amorphous silicon based particle detectors

OpenAIRE

Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

2012-01-01

Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

Silicon microstrip detectors with SVX chip readout

International Nuclear Information System (INIS)

Brueckner, W.; Dropmann, F.; Godbersen, M.; Konorov, I.; Koenigsmann, K.; Masciocchi, S.; Newsom, C.; Paul, S.; Povh, B.; Russ, J.S.; Timm, S.; Vorwalter, K.; Werding, R.

1995-01-01

A new silicon strip detector has been designed for the fixed target experiment WA89 at CERN. The system of about 30 000 channels is equipped with SVX chips and read out via a double buffer into a FASTBUS memory. The detector provides a fast readout by offering zero-suppressed data extraction on the chip. The silicon counters are the largest detectors built on a monocrystal so far in order to achieve good transversal acceptance. Construction and performance during the 1993 data taking run are discussed. ((orig.))

In Situ Determination of Thermal Profiles during Czochralski Silicon Crystal Growth by an Eddy Current Technique.

Science.gov (United States)

Choe, Kwang Su.

An eddy current testing method was developed to continuously monitor crystal growth process and determine thermal profiles in situ during Czochralski silicon crystal growth. The work was motivated by the need to improve the quality of the crystal by controlling thermal gradients and annealing history over the growth cycle. The experimental concept is to monitor intrinsic electrical conductivities of the growing crystal and deduce temperature values from them. The experiments were performed in a resistance-heated Czochralski puller with a 203 mm (8 inch) diameter crucible containing 6.5 kg melt. The silicon crystals being grown were about 80 mm in diameter and monitored by an encircling sensor operating at three different test frequencies (86, 53 and 19 kHz). A one-dimensional analytical solution was employed to translate the detected signals into electrical conductivities. In terms of experiments, the effects of changes in growth condition, which is defined by crystal and crucible rotation rates, crucible position, pull rate, and hot-zone configuration, were investigated. Under a given steady-state condition, the thermal profile was usually stable over the entire length of crystal growth. The profile shifted significantly, however, when the crucible rotation rate was kept too high. As a direct evidence to the effects of melt flow on heat transfer process, a thermal gradient minimum was observed about the crystal/crucible rotation combination of 20/-10 rpm cw. The thermal gradient reduction was still most pronounced when the pull rate or the radiant heat loss to the environment was decreased: a nearly flat axial thermal gradient was achieved when either the pull rate was halved or the height of the exposed crucible wall was effectively doubled. Under these conditions, the average axial thermal gradient along the surface of the crystal was about 4-5 ^{rm o}C/mm. Regardless of growth condition, the three-frequency data revealed radial thermal gradients much larger

The silicon vertex tracker for star and future applications of silicon drift detectors

International Nuclear Information System (INIS)

Bellwied, Rene

2001-01-01

The Silicon Vertex Tracker (SVT) for the STAR experiment at the Relativistic Heavy Ion Collider at Brookhaven National Laboratory has recently been completed and installed. First data were taken in July 2001. The SVT is based on a novel semi-conductor technology called Silicon Drift Detectors. 216 large area (6 by 6 cm) Silicon wafers were employed to build a three barrel device capable of vertexing and tracking in a high occupancy environment. Its intrinsic radiation hardness, its operation at room temperature and its excellent position resolution (better than 20 micron) in two dimensions with a one dimensional detector readout, make this technology very robust and inexpensive and thus a viable alternative to CCD, Silicon pixel and Silicon strip detectors in a variety of applications from fundamental research in high-energy and nuclear physics to astrophysics to medical imaging. I will describe the development that led to the STAR-SVT, its performance and possible applications for the near future

Measurements of Silicon Detector Thermal Runaway

CERN Document Server

Heusch, C A; Moser, H G

1999-01-01

We measured thermal runaway properties of previously irradiated silicon detectors cooled by TPG bars. We simulated their expected behaviour to measure the energy gap in the detector material and to test the validity of various underlying assumptions.

Silicon strip detectors for the ATLAS HL-LHC upgrade

CERN Document Server

Gonzalez Sevilla, S; The ATLAS collaboration

2011-01-01

The LHC upgrade is foreseen to increase the ATLAS design luminosity by a factor ten, implying the need to build a new tracker suited to the harsh HL-LHC conditions in terms of particle rates and radiation doses. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. To successfully face the increased radiation dose, a new generation of extremely radiation hard silicon detectors is being designed. We give an overview of the ATLAS tracker upgrade project, in particular focusing on the crucial innermost silicon strip layers. Results from a wide range of irradiated silicon detectors for the strip region of the future ATLAS tracker are presented. Layout concepts for lightweight yet mechanically very rigid detector modules with high service integration are shown.

Radiation Response of Forward Biased Float Zone and Magnetic Czochralski Silicon Detectors of Different Geometry for 1-MeV Neutron Equivalent Fluence Monitoring

CERN Document Server

Mekki, J; Dusseau, Laurent; Roche, Nicolas Jean-Henri; Saigne, Frederic; Mekki, Julien; Glaser, Maurice

2010-01-01

Aiming at evaluating new options for radiation monitoring sensors in LHC/SLHC experiments, the radiation responses of FZ and MCz custom made silicon detectors of different geometry have been studied up to about 4 x 10(14) n(eq)/cm(2). The radiation response of the devices under investigation is discussed in terms of material type, thickness and active area influence.

The ARGUS silicon vertex detector

International Nuclear Information System (INIS)

Michel, E.; Ball, S.; Ehret, K.; Geyer, C.; Hesselbarth, J.; Hoelscher, A.; Hofmann, W.; Holzer, B.; Huepper, A.; Khan, S.; Knoepfle, K.T.; Seeger, M.; Spengler, J.; Brogle, M.; Horisberger, R.

1994-01-01

A silicon microstrip vertex detector has been built as an upgrade to the ARGUS detector for increased precision and efficiency in the reconstruction of decay vertices. This paper discusses the mechanical and electronic design of this device and presents first results from its successful test operation yielding an impact parameter resolution of about 18 μm. ((orig.))

Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

Energy Technology Data Exchange (ETDEWEB)

Carey, JE; Mazur, E

2005-05-19

With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

Quality evaluation of resistivity-controlled silicon crystals

Science.gov (United States)

Wang, Jong Hoe

2006-01-01

The segregation phenomenon of dopants causes a low production yield of silicon crystal that meets the resistivity tolerance required by device manufacturers. In order to control the macroscopic axial resistivity distribution in bulk crystal growth, numerous studies including continuous Czochralski method and double crucible technique have been studied. The simple B-P codoping method for improving the productivity of p-type silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. In this work, the quality of Czochralski-grown silicon single crystals with a diameter 200 mm using B-P codoping method was studied from the chemical and structural points of view. It was found that the characteristics of B-P codoped wafers including the oxygen precipitation behavior and the grown-in defects are same as that of conventional B-doped Czochralski crystals.

Detector performance of the ALICE silicon pixel detector

CERN Document Server

Cavicchioli, C

2011-01-01

The ALICE Silicon Pixel Detector (SPD) forms the two innermost layers of the ALICE Inner Tracking System (ITS). It consists of two barrel layers of hybrid silicon pixel detectors at radii of 39 and 76 mm. The physics targets of the ALICE experiment require that the material budget of the SPD is kept within approximate to 1\\%X(0) per layer. This has set some stringent constraints on the design and construction of the SPD. A unique feature of the ALICE SPD is that it is capable of providing a prompt trigger signal, called Fast-OR, which contributes to the L0 trigger decision. The pixel trigger system allows to apply a set of algorithms for the trigger selection, and its output is sent to the Central Trigger Processor (CTP). The detector has been installed in the experiment in summer 2007. During the first injection tests in June 2008 the SPD was able to record the very first sign of life of the LHC by registering secondary particles from the beam dumped upstream the ALICE experiment. In the following months the...

Infrared studies of defects formed during postirradiation anneals of Czochralski silicon

Science.gov (United States)

Londos, C. A.; Sarlis, N. V.; Fytros, L. G.

1998-10-01

This article reports on defect studies of neutron-irradiated Czochralski-grown silicon (Cz-Si) material by means of infrared spectroscopy. In particular, the investigation was focused on the evolution of the 828 cm-1 well-known band of A-center, due to isochronal anneals from room temperature (RT) up to ≈700 °C. The strength of the VO band begins to increase above ≈200 gradually up to 300 °C (stage I); then, it begins to decrease up to ≈400 °C (stage II), where upon it stabilizes up to ≈550 °C (stage III). Upon re-irradiation under exactly the same conditions and repeating the annealing process, the increase of the VO signal in stage I disappears. The phenomenon is ascribed to the existence of defect aggregates labeled as Xi centers which are correlated with (impurity-defect) clusters that compete with Oi in capturing vacancies. The presence of Xi centers is related to the thermal annealings performed. Comparison of the evolution of VO (828 cm-1) and VO2 (887 cm-1) bands between irradiated and re-irradiated materials, during stage II, is made and the results are discussed in the framework of established reaction patterns. The stabilization of the amplitude of the 828 cm-1 line in stage III is examined. The prevailing aspect is that a portion of A-centers in neutron-irradiated Si acquires larger thermal stability by relaxing in the vicinity of larger defects.

Silicon detectors for x and gamma-ray with high radiation resistance

International Nuclear Information System (INIS)

Cimpoca, Valerica; Popescu, Ion V.; Ruscu, Radu

2001-01-01

Silicon detectors are widely used in X and gamma-ray spectroscopy for direct detection or coupled with scintillators in high energy nuclear physics (modern collider experiments are representative), medicine and industrial applications. In X and gamma dosimetry, a low detection limit (under 6 KeV) with silicon detectors becomes available. Work at the room temperature is now possible due to the silicon processing evolution, which assures low reverse current and high life time of carriers. For several years, modern semiconductor detectors have been the primary choice for the measurement of nuclear radiation in various scientific fields. Nowadays the recently developed high resolution silicon detectors found their way in medical applications. As a consequence many efforts have been devoted to the development of high sensitivity and radiation hardened X and gamma-ray detectors for the energy range of 5 - 150 keV. The paper presents some results concerning the technology and behaviour of X and Gamma ray silicon detectors used in physics research, industrial and medical radiography. The electrical characteristics of these detectors, their modification after exposure to radiation and the results of spectroscopic X and Gamma-ray measurements are discussed. The results indicated that the proposed detectors enables the development of reliable silicon detectors to be used in controlling the low and high radiation levels encountered in a lot of application

A monolithic silicon detector telescope

International Nuclear Information System (INIS)

Cardella, G.; Amorini, F.; Cabibbo, M.; Di Pietro, A.; Fallica, G.; Franzo, G.; Figuera, P.; Papa, M.; Pappalardo, G.; Percolla, G.; Priolo, F.; Privitera, V.; Rizzo, F.; Tudisco, S.

1996-01-01

An ultrathin silicon detector (1 μm) thick implanted on a standard 400 μm Si-detector has been built to realize a monolithic telescope detector for simultaneous charge and energy determination of charged particles. The performances of the telescope have been tested using standard alpha sources and fragments emitted in nuclear reactions with different projectile-target colliding systems. An excellent charge resolution has been obtained for low energy (less than 5 MeV) light nuclei. A multi-array lay-out of such detectors is under construction to charge identify the particles emitted in reactions induced by low energy radioactive beams. (orig.)

Oxide layers for silicon detector protection against enviroment effects

International Nuclear Information System (INIS)

Bel'tsazh, E.; Brylovska, I.; Valerian, M.

1986-01-01

It is shown that for protection of silicon detectors of nuclear radiations oxide layers could be used. The layers are produced by electrochemical oxidation of silicon surface with the following low-temperature annealing. These layers have characteristics similar to those for oxide layers produced by treatment of silicon samples at elevated temperature in oxygen flow. To determine properties of oxide layers produced by electrochemical oxidation the α-particle back-scattering method and the method of volt-farad characteristics were used. Protection properties of such layers were checked on the surface-barrier detectors. It was shown that protection properties of such detectors were conserved during long storage at room temperature and during their storage under wet-bulb temperature. Detectors without protection layer have worsened their characteristics

Allpix$^{2}$: A Modular Simulation Framework for Silicon Detectors

CERN Document Server

Spannagel, Simon; Hynds, Daniel; Alipour Tehrani, Niloufar; Benoit, Mathieu; Dannheim, Dominik; Gauvin, Neal; Nurnberg, Andreas Matthias; Schutze, Paul Jean; Vicente Barreto Pinto, Mateus

2018-01-01

Allpix$^{2}$ is a generic, open-source software framework for the simulation of silicon pixel detectors. Its goal is to ease the implementation of detailed simulations for both single detectors and more complex setups such as beam telescopes from incident radiation to the digitised detector response. Predefined detector types can be automatically constructed from simple model files describing the detector parameters. The simulation chain is arranged with the help of intuitive configuration files and an extensible system of modules, which implement separate simulation steps such as realistic charge carrier deposition with the Geant4 toolkit or propagation of charge carriers in silicon using a drift-diffusion model. Detailed electric field maps imported from TCAD simulations can be used to precisely model the drift behaviour of charge carriers within the silicon, bringing a new level of realism to Monte Carlo based simulations of particle detectors. This paper provides an overview of the framework and a select...

The CDF Silicon Vertex Detector

International Nuclear Information System (INIS)

Tkaczyk, S.; Carter, H.; Flaugher, B.

1993-01-01

A silicon strip vertex detector was designed, constructed and commissioned at the CDF experiment at the Tevatron collider at Fermilab. The mechanical design of the detector, its cooling and monitoring are presented. The front end electronics employing a custom VLSI chip, the readout electronics and various components of the SVX system are described. The system performance and the experience with the operation of the

ALICE Silicon Pixel Detector

CERN Multimedia

Manzari, V

2013-01-01

The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

Silicon-Based Detectors at the HL-LHC

CERN Document Server

Hartmann, Frank

2018-01-01

This document discusses the silicon-based detectors planned for the High Luminosity LHC. The special aspects to cope with the new environment and its challenges, e.g. very high radiation levels and very high instantaneous luminosity thus high pile-up, high occupancy and high data rates, are addressed. The different design choices of the detectors are put into perspective. Exciting topics like trackers, high granularity silicon-based calorimetry with novel 8~inch processing, fast timing and new triggers are described.

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

International Nuclear Information System (INIS)

Chroneos, A.; Londos, C. A.; Sgourou, E. N.

2011-01-01

Experimental and theoretical techniques are used to investigate the impact of tin doping on the formation and the thermal stability of oxygen- and carbon-related defects in electron-irradiated Czochralski silicon. The results verify previous reports that Sn doping reduces the formation of the VO defect and suppresses its conversion to the VO 2 defect. Within experimental accuracy, a small delay in the growth of the VO 2 defect is observed. Regarding carbon-related defects, it is determined that Sn doping leads to a reduction in the formation of the C i O i , C i C s , and C i O i (Si I ) defects although an increase in their thermal stability is observed. The impact of strain induced in the lattice by the larger tin substitutional atoms, as well as their association with intrinsic defects and carbon impurities, can be considered as an explanation to account for the above observations. The density functional theory calculations are used to study the interaction of tin with lattice vacancies and oxygen- and carbon-related clusters. Both experimental and theoretical results demonstrate that tin co-doping is an efficient defect engineering strategy to suppress detrimental effects because of the presence of oxygen- and carbon-related defect clusters in devices.

Nuclear radiation detectors using high resistivity neutron transmutation doped silicon

International Nuclear Information System (INIS)

Gessner, T.; Irmer, K.

1983-01-01

A method for the production of semiconductor detectors based on high resistivity n-type silicon is described. The n-type silicon is produced by neutron irradiation of p-type silicon. The detectors are produced by planar technique. They are suitable for the spectrometry of alpha particles and for the pulse count measurement of beta particles at room temperature. (author)

Development of Ultra-Fast Silicon Detectors for 4D tracking

Science.gov (United States)

Staiano, A.; Arcidiacono, R.; Boscardin, M.; Dalla Betta, G. F.; Cartiglia, N.; Cenna, F.; Ferrero, M.; Ficorella, F.; Mandurrino, M.; Obertino, M.; Pancheri, L.; Paternoster, G.; Sola, V.

2017-12-01

In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of ~ 10 ps and ~ 10 μm with a 50 μm thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor ~10 larger than standard silicon detectors. The basic design of UFSD consists of a thin silicon sensor with moderate internal gain and pixelated electrodes coupled to full custom VLSI chip. An overview of test beam data on time resolution and the impact on this measurement of radiation doses at the level of those expected at HL-LHC is presented. First I-V and C-V measurements on a new FBK sensor production of UFSD, 50 μm thick, with B and Ga, activated at two diffusion temperatures, with and without C co-implantation (in Low and High concentrations), and with different effective doping concentrations in the Gain layer, are shown. Perspectives on current use of UFSD in HEP experiments (UFSD detectors have been installed in the CMS-TOTEM Precision Protons Spectrometer for the forward physics tracking, and are currently taking data) and proposed applications for a MIP timing layer in the HL-LHC upgrade are briefly discussed.

Sensors for ultra-fast silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Sadrozinski, H.F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N. [INFN Torino, Torino (Italy); Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain)

2014-11-21

We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain.

Sensors for ultra-fast silicon detectors

International Nuclear Information System (INIS)

Sadrozinski, H.F.-W.; Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A.; Cartiglia, N.; Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D.

2014-01-01

We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain

A silicon pixel detector prototype for the CLIC vertex detector

CERN Multimedia

AUTHOR|(INSPIRE)INSPIRE-00714258

2017-01-01

A silicon pixel detector prototype for CLIC, currently under study for the innermost detector surrounding the collision point. The detector is made of a High-Voltage CMOS sensor (top) and a CLICpix2 readout chip (bottom) that are glued to each other. Both parts have a size of 3.3 x 4.0 $mm^2$ and consist of an array of 128 x 128 pixels of 25 x 25 $\\micro m^2$ size.

CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes

CERN Document Server

Hoedlmoser, H; Köhler, M; Nordlund, H

2007-01-01

Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of p-type MCz Silicon diodes irradiated with protons up to a fluence of has been performed by means of Charge Collection Efficiency (CCE) measurements as well as standard CV/IV characterizations. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. A subsequent annealing study of the irradiated detectors shows an increase in effective doping concentration and a decrease in the leakage current, whereas the CCE remains basically unchanged. Two different series of detectors have been compared differing in the implantation dose of p-spray isolation as well as effective doping concentration (Neff) of the p-type bulk presumably due to a difference in thermal donor (TD) activation during processing. The series with the higher concentration of TDs shows a delayed reverse annealing of Neff after irradia...

Silicon micropattern detector: a dream

Energy Technology Data Exchange (ETDEWEB)

Heijne, E H.M.; Jarron, P; Olsen, A; Redaelli, N

1988-12-15

The present use of silicon microstrip detectors in elementary particle physics experiments is described and future needs are evaluated. Possibilities and problems to be encountered in the development of a true two-dimensional detector with intelligent data collection are discussed. This paper serves as an introduction to various other contributions to the conference proceedings, either dealing with futuristic device designs or with cautious steps on the road of technology development.

Diffuse X-ray scattering near the Bragg reflection of P-doped Czochralski silicon

International Nuclear Information System (INIS)

Stojanoff, V.; Pimentel, C.A.F.

1983-01-01

Bragg line profile and high resolution diffuse X-ray scattering measurements around the (400) reciprocal lattice point of dislocation-free Czochralski Si single crystals P-doped have shown defects of interstitial nature with typical size about 1000 A. (Author) [pt

Assembly and validation of the SSD silicon microstrip detector of ALICE

NARCIS (Netherlands)

de Haas, A.P.; Kuijer, P.G.; Nooren, G.J.L.; Oskamp, C.J.; Sokolov, A.N.; van den Brink, A.

2006-01-01

The Silicon Strip Detector (SSD) forms the two outermost layers of the Inner Tracking System (ITS) of ALICE. The SSD detector consists of 1698 double-sided silicon microstrip modules. The electrical connection between silicon sensor and front-end electronics is made via TAB-bonded

Technology of fabrication of silicon-lithium detector with superficial junction

International Nuclear Information System (INIS)

Cabal Rodriguez, A.E.; Diaz Garcia, A.; Noriega Scull, C.

1997-01-01

The Silicon nuclear radiation detectors transform the charge produced within the semiconductor crystal, product of the impinges of particles and X rays, in pulses of voltage at the output of the preamplifier. The planar Silicon-Lithium (Si(Li)) detector with superficial junction is basically a Pin structure diode. By mean of the diffusion and drift of Lithium in the Silicon a compensated or depletion region was created. There the incident radiation interacts with the Silicon, producing an electric signal proportional to the detector's energy deposited in the semiconductor. The technological process of fabrication this kind of detectors comprises several stages, some of them complex and of long duration. They also demand a systematic control. The technological process of Si(Li) detector's fabrication was carried out. The detector's fabrication electric characteristics were measured in some steps. An obtained device was mounted in the holder within a cryostat, in order to work to temperature of the liquid nitrogen. The energy resolution of the detector was measured and the value was 180 eV for the line of 5.9 KeV of an Fe-55 source. This value has allowed to work with the detector in energy disperse X-rays fluorescence. (author) [es

Radiation hardness of silicon detectors for collider experiments

International Nuclear Information System (INIS)

Golutvin, I.; Cheremukhin, A.; Fefelova, E.

1995-01-01

The silicon planar detectors before and after fast neutron irradiation ( n o> = 1.35 MeV) at room temperature have been investigated. Maximal neutron fluence has been 8 · 10 13 cm -2 . The detectors have been manufactured of the high resistivity (1 : 10 k Ohm · cm) n-type float-zone silicon (FZ-Si) with the orientation supplied by two different producers: WACKER CHEMITRONIC and Zaporojie Titanium-Magnesium Factory (ZTMF). The influence of fast neutron irradiation of the main parameters of the starting silicon before the technological high temperature treatment has been investigated as well. 30 refs., 17 figs., 5 tabs

Muon flux measurement with silicon detectors in the CERN neutrino beams

International Nuclear Information System (INIS)

Heijne, E.H.M.

1983-01-01

The neutrino beam installations at the CERN SPS accelerator are described, with emphasis on the beam monitoring systems. Especially the muon flux measurement system is considered in detail, and the calibration procedure and systematic aspects of the measurements are discussed. An introduction is given to the use of silicon semiconductor detectors and their related electronics. Other special chapters concern non-linear phenomena in the silicon detectors, radiation damage in silicon detectors, energy loss and energy deposition in silicon and a review of energy loss phenomena for high energy muons in matter. (orig.)

Silicon for ultra-low-level detectors and sup 32 Si

Energy Technology Data Exchange (ETDEWEB)

Plaga, R. (Max Planck Inst. fuer Kernphysik, Heidelberg (Germany))

1991-11-15

A recent dark matter experiment using a silicon diode detector confirms that the decay of {sup 32}Si is a dangerous background in ultra-low-level experiments using silicon as detector material or shielding. In this Letter we study the mechanism of how {sup 32}Si enters commercially available silicon. Ways to avoid this contamination are pointed out. Limits on the {sup 32}Si content of silicon from measurements with miniaturized low-level proportional counters are also given. (orig.).

Compton recoil electron tracking with silicon strip detectors

International Nuclear Information System (INIS)

O'Neill, T.J.; Ait-Ouamer, F.; Schwartz, I.; Tumer, O.T.; White, R.S.; Zych, A.D.

1992-01-01

The application of silicon strip detectors to Compton gamma ray astronomy telescopes is described in this paper. The Silicon Compton Recoil Telescope (SCRT) tracks Compton recoil electrons in silicon strip converters to provide a unique direction for Compton scattered gamma rays above 1 MeV. With strip detectors of modest positional and energy resolutions of 1 mm FWHM and 3% at 662 keV, respectively, 'true imaging' can be achieved to provide an order of magnitude improvement in sensitivity to 1.6 x 10 - 6 γ/cm 2 -s at 2 MeV. The results of extensive Monte Carlo calculations of recoil electrons traversing multiple layers of 200 micron silicon wafers are presented. Multiple Coulomb scattering of the recoil electron in the silicon wafer of the Compton interaction and the next adjacent wafer is the basic limitation to determining the electron's initial direction

The fluid flow of Czochralski melt under the electromagnetic field

OpenAIRE

加藤, 拓哉; 二條久保, 裕; 岩本, 光生; 齋藤, 晋一; 赤松, 正人; 尾添, 紘之; Takuya, Katoh; Yuu, Nijoukubo; Mitsuo, Iwamoto; Shinichi, Saitoh; Masato, Akamatsu; Hiroyuki, Ozoe; 大分大院; 大分大工; 大分大工

2009-01-01

The silicon single crystal is use for the semiconductor device and it is mainly manufactured by the Czochralski crystal growing method. Under the Cz method, the forced convection and natural convection caused by the crystal rotation and the temperature difference between the crystal and crucible. In traditional system, the melt convection is controlled by the heater power, the crystal and crucible rotation. We apply Lorentz force to control the melt convection in this study, the Lorentz force...

Developments in Silicon Detectors and their impact on LHCb Physics Measurements

CERN Document Server

Gouldwell-Bates, A

2005-01-01

The LHCb experiment is a high energy physics detector at the Large Hadron Collider (LHC) which will probe the current understanding of the Standard Model through precise measurements of CP violation and rare decays. The LHCb detector heavily depends on the silicon vertexing (VELO) sub-detector for excellent vertex and proper decay time resolutions. The VELO detector sits at a position of only 7 mm from the LHC proton beams. However, the proximity of the silicon sensors to the proton beams results in the detectors suffering radiation damage. Radiation damage results in three changes in the macroscopic properties of the silicon detector: an increase of the leakage current, a decrease in the charge collection efficiency, and changes in the operation voltage required to fully deplete the silicon detector of the free charge carriers. Due to this radiation damage, it is expected that a replacement or upgrade of the LHCb vertex detector will be required by 2010, only 3 years after the turn-on of the LHC. This thesis...

Characterization of silicon detectors through TCT at Delhi University

Energy Technology Data Exchange (ETDEWEB)

Jain, G., E-mail: geetikajain.hep@gmail.com; Lalwani, K.; Dalal, R.; Bhardwaj, A.; Ranjan, K.

2016-07-11

Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup.

Characterization of silicon detectors through TCT at Delhi University

International Nuclear Information System (INIS)

Jain, G.; Lalwani, K.; Dalal, R.; Bhardwaj, A.; Ranjan, K.

2016-01-01

Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup.

Characterization of silicon detectors through TCT at Delhi University

Science.gov (United States)

Jain, G.; Lalwani, K.; Dalal, R.; Bhardwaj, A.; Ranjan, K.

2016-07-01

Transient Current Technique (TCT) is one of the important methods to characterize silicon detectors and is based on the time evolution of the charge carriers generated when a laser light is shone on it. For red laser, charge is injected only to a small distance from the surface of the detector. For such a system, one of the charge carriers is collected faster than the readout time of the electronics and therefore, the effective signal at the electrodes is decided by the charge carriers that traverse throughout the active volume of the detector, giving insight to the electric field profile, drift velocity, effective doping density, etc. of the detector. Delhi University is actively involved in the silicon detector R&D and has recently installed a TCT setup consisting of a red laser system, a Faraday cage, a SMU (Source Measuring Unit), a bias tee, and an amplifier. Measurements on a few silicon pad detectors have been performed using the developed system, and the results have been found in good agreement with the CERN setup.

Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

CERN Document Server

Fretwurst, E; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A G; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, L; Dalla Betta, G F; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; González-Sevilla, S; Gorelov,I; Goss, J; Gouldwell-Bates, A; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, I; Lazanu, S; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Linhart, V; Litovchenko, P G; Litovchenko, A P; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Populea, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidela, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

2005-01-01

The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Furthe...

The silicon strip detector at the Mark 2

International Nuclear Information System (INIS)

Jacobsen, R.; Golubev, V.; Lueth, V.; Barnett, B.; Dauncey, P.; Matthews, J.; Adolphsen, C.; Burchat, P.; Gratta, G.; King, M.; Labarga, L.; Litke, A.; Turala, M.; Zaccardelli, C.

1990-04-01

We have installed a Silicon Strip Vertex Detector in the Mark II detector at the Stanford Linear Collider. We report on the performance of the detector during a recent test run, including backgrounds, stability and charged particle tracking. 10 refs., 9 figs

Silicon radiation detector

International Nuclear Information System (INIS)

Benc, I.; Kerhart, J.; Kopecky, J.; Krca, P.; Veverka, V.; Weidner, M.; Weinova, H.

1992-01-01

The silicon radiation detector, which is designed for the detection of electrons with energies above 500 eV and of radiation within the region of 200 to 1100 nm, comprises a PIN or PNN + type photodiode. The active acceptor photodiode is formed by a detector surface of shallow acceptor diffusion surrounded by a collector band of deep acceptor diffusion. The detector surface of shallow P-type diffusion with an acceptor concentration of 10 15 to 10 17 atoms/cm 3 reaches a depth of 40 to 100 nm. One sixth to one eighth of the collector band width is overlapped by the P + collector band at a width of 150 to 300 μm with an acceptor concentration of 10 20 to 10 21 atoms/cm 3 down a depth of 0.5 to 3 μm. This band is covered with a conductive layer, of NiCr for instance. (Z.S.)

The Belle II Silicon Vertex Detector

Energy Technology Data Exchange (ETDEWEB)

Friedl, M., E-mail: markus.friedl@oeaw.ac.at [HEPHY – Institute of High Energy Physics, Nikolsdorfer Gasse 18, 1050 Vienna (Austria); Ackermann, K. [MPI Munich, Föhringer Ring 6, 80805 München (Germany); Aihara, H. [University of Tokyo, Department of Physics, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Aziz, T. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Bergauer, T. [HEPHY – Institute of High Energy Physics, Nikolsdorfer Gasse 18, 1050 Vienna (Austria); Bozek, A. [Institute of Nuclear Physics, Division of Particle Physics and Astrophysics, ul. Radzikowskiego 152, 31 342 Krakow (Poland); Campbell, A. [DESY, Notkestrasse 85, 22607 Hamburg (Germany); Dingfelder, J. [University of Bonn, Department of Physics and Astronomy, Nussallee 12, 53115 Bonn (Germany); Drasal, Z. [Charles University, Institute of Particle and Nuclear Physics, Ke Karlovu 3, 121 16 Praha 2 (Czech Republic); Frankenberger, A. [HEPHY – Institute of High Energy Physics, Nikolsdorfer Gasse 18, 1050 Vienna (Austria); Gadow, K. [DESY, Notkestrasse 85, 22607 Hamburg (Germany); Gfall, I. [HEPHY – Institute of High Energy Physics, Nikolsdorfer Gasse 18, 1050 Vienna (Austria); Haba, J.; Hara, K.; Hara, T. [KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Higuchi, T. [University of Tokyo, Kavli Institute for Physics and Mathematics of the Universe, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan); Himori, S. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Irmler, C. [HEPHY – Institute of High Energy Physics, Nikolsdorfer Gasse 18, 1050 Vienna (Austria); Ishikawa, A. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Joo, C. [Seoul National University, High Energy Physics Laboratory, 25-107 Shinlim-dong, Kwanak-gu, Seoul 151-742 (Korea, Republic of); and others

2013-12-21

The KEKB machine and the Belle experiment in Tsukuba (Japan) are now undergoing an upgrade, leading to an ultimate luminosity of 8×10{sup 35}cm{sup −2}s{sup −1} in order to measure rare decays in the B system with high statistics. The previous vertex detector cannot cope with this 40-fold increase of luminosity and thus needs to be replaced. Belle II will be equipped with a two-layer Pixel Detector surrounding the beam pipe, and four layers of double-sided silicon strip sensors at higher radii than the old detector. The Silicon Vertex Detector (SVD) will have a total sensitive area of 1.13m{sup 2} and 223,744 channels—twice as many as its predecessor. All silicon sensors will be made from 150 mm wafers in order to maximize their size and thus to reduce the relative contribution of the support structure. The forward part has slanted sensors of trapezoidal shape to improve the measurement precision and to minimize the amount of material as seen by particles from the vertex. Fast-shaping front-end amplifiers will be used in conjunction with an online hit time reconstruction algorithm in order to reduce the occupancy to the level of a few percent at most. A novel “Origami” chip-on-sensor scheme is used to minimize both the distance between strips and amplifier (thus reducing the electronic noise) as well as the overall material budget. This report gives an overview on the status of the Belle II SVD and its components, including sensors, front-end detector ladders, mechanics, cooling and the readout electronics.

The Belle II Silicon Vertex Detector

International Nuclear Information System (INIS)

Friedl, M.; Ackermann, K.; Aihara, H.; Aziz, T.; Bergauer, T.; Bozek, A.; Campbell, A.; Dingfelder, J.; Drasal, Z.; Frankenberger, A.; Gadow, K.; Gfall, I.; Haba, J.; Hara, K.; Hara, T.; Higuchi, T.; Himori, S.; Irmler, C.; Ishikawa, A.; Joo, C.

2013-01-01

The KEKB machine and the Belle experiment in Tsukuba (Japan) are now undergoing an upgrade, leading to an ultimate luminosity of 8×10 35 cm −2 s −1 in order to measure rare decays in the B system with high statistics. The previous vertex detector cannot cope with this 40-fold increase of luminosity and thus needs to be replaced. Belle II will be equipped with a two-layer Pixel Detector surrounding the beam pipe, and four layers of double-sided silicon strip sensors at higher radii than the old detector. The Silicon Vertex Detector (SVD) will have a total sensitive area of 1.13m 2 and 223,744 channels—twice as many as its predecessor. All silicon sensors will be made from 150 mm wafers in order to maximize their size and thus to reduce the relative contribution of the support structure. The forward part has slanted sensors of trapezoidal shape to improve the measurement precision and to minimize the amount of material as seen by particles from the vertex. Fast-shaping front-end amplifiers will be used in conjunction with an online hit time reconstruction algorithm in order to reduce the occupancy to the level of a few percent at most. A novel “Origami” chip-on-sensor scheme is used to minimize both the distance between strips and amplifier (thus reducing the electronic noise) as well as the overall material budget. This report gives an overview on the status of the Belle II SVD and its components, including sensors, front-end detector ladders, mechanics, cooling and the readout electronics

Laser tests of silicon detectors

International Nuclear Information System (INIS)

Dolezal, Zdenek; Escobar, Carlos; Gadomski, Szymon; Garcia, Carmen; Gonzalez, Sergio; Kodys, Peter; Kubik, Petr; Lacasta, Carlos; Marti, Salvador; Mitsou, Vasiliki A.; Moorhead, Gareth F.; Phillips, Peter W.; Reznicek, Pavel; Slavik, Radan

2007-01-01

This paper collects experiences from the development of a silicon sensor laser testing setup and from tests of silicon strip modules (ATLAS End-cap SCT), pixel modules (DEPFET) and large-area diodes using semiconductor lasers. Lasers of 1060 and 680 nm wavelengths were used. A sophisticated method of focusing the laser was developed. Timing and interstrip properties of modules were measured. Analysis of optical effects involved and detailed discussion about the usability of laser testing for particle detectors are presented

First performance results of the Phobos silicon detectors

Science.gov (United States)

Pernegger, H.; Back, B. B.; Baker, M. D.; Barton, D. S.; Betts, R. R.; Bindel, R.; Budzanowski, A.; Busza, W.; Carroll, A.; Decowski, M. P.; Garcia, E.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Heintzelman, G. A.; Henderson, C.; Hołyński, R.; Hofman, D. J.; Holzman, B.; Johnson, E.; Kane, J. L.; Katzy, J.; Khan, N.; Kucewicz, W.; Kulinich, P.; Lin, W. T.; Manly, S.; McLeod, D.; Michalowski, J.; Mignerey, A.; Mülmenstädt, J.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Reed, C.; Remsberg, L. P.; Reuter, M.; Roland, C.; Roland, G.; Rosenberg, L.; Sarin, P.; Sawicki, P.; Skulski, W.; Steadman, S. G.; Stephans, G. S. F.; Steinberg, P.; Stodulski, M.; Sukhanov, A.; Tang, J.-L.; Teng, R.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Verdier, R.; Wadsworth, B.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wuosmaa, A. H.; Wysłouch, B.

2001-11-01

The Phobos experiment concluded its first year of operation at RHIC taking data in Au-Au nucleus collisions at s nn=65 GeV and 130 GeV/ nucleon pair. First preliminary results of the performances of our silicon detectors in the experiment are summarized. The Phobos experiment uses silicon pad detectors for both tracking and multiplicity measurements. The silicon sensors vary strongly in their pad geometry. In this paper, we compare the signal response, the signal uniformity and signal-to-noise performance as measured in the experiment for the different geometries. Additionally, we investigate effects of very high channel occupancy on the signal response.

First performance results of the Phobos silicon detectors

CERN Document Server

Pernegger, H; Baker, M D; Barton, D S; Betts, R R; Bindel, R; Budzanowski, A; Busza, W; Carroll, A; Decowski, M P; García, E; George, N; Gulbrandsen, K H; Gushue, S; Halliwell, C; Hamblen, J; Heintzelman, G A; Henderson, C; Holynski, R; Hofman, D J; Holzman, B; Johnson, E; Kane, J L; Katzy, J; Khan, N; Kucewicz, W; Kulinich, P; Lin, W T; Manly, S; McLeod, D; Michalowski, J; Mignerey, A; Mülmenstädt, J; Nouicer, R; Olszewski, A; Pak, R; Park, I C; Reed, C; Remsberg, L P; Reuter, M; Roland, C; Roland, G; Rosenberg, L J; Sarin, P; Sawicki, P; Skulski, W; Steadman, S G; Stephans, G S F; Steinberg, P; Stodulski, M; Sukhanov, A; Tang, J L; Teng, R; Trzupek, A; Vale, C; van Nieuwenhuizen, G J; Verdier, R; Wadsworth, B; Wolfs, F L H; Wosiek, B; Wozniak, K; Wuosmaa, A H; Wyslouch, B

2001-01-01

The Phobos experiment concluded its first year of operation at RHIC taking data in Au-Au nucleus collisions at s radical = 65 GeV and 130 GeV/nucleon pair. First preliminary results of the performances of our silicon detectors in the experiment are summarized. The Phobos experiment uses silicon pad detectors for both tracking and multiplicity measurements. The silicon sensors vary strongly in their pad geometry. In this paper, we compare the signal response, the signal uniformity and signal-to-noise performance as measured in the experiment for the different geometries. Additionally, we investigate effects of very high channel occupancy on the signal response.

Slim edges in double-sided silicon 3D detectors

International Nuclear Information System (INIS)

Povoli, M; Dalla Betta, G-F; Bagolini, A; Boscardin, M; Giacomini, G; Vianello, E; Zorzi, N

2012-01-01

Minimization of the insensitive edge area is one of the key requirements for silicon radiation detectors to be used in future silicon trackers. In 3D detectors this goal can be achieved with the active edge, at the expense of a high fabrication process complexity. In the framework of the ATLAS 3D sensor collaboration, we produced modified 3D silicon sensors with a double-sided technology. While this approach is not suitable to obtain active edges, because it does not use a support wafer, it allows for a new type of edge termination, the slim edge. In this paper we report on the development of the slim edge, from numerical simulations to design and testing, proving that it works effectively without increasing the fabrication complexity of silicon 3D detectors, and that it could be further optimized to reduce the insensitive edge region to less than 100 μm.

Mechanical design of the CDF SVX II silicon vertex detector

International Nuclear Information System (INIS)

Skarha, J.E.

1994-08-01

A next generation silicon vertex detector is planned at CDF for the 1998 Tevatron collider run with the Main Injector. The SVX II silicon vertex detector will allow high luminosity data-taking, enable online triggering of secondary vertex production, and greatly increase the acceptance for heavy flavor physics at CDF. The design specifications, geometric layout, and early mechanical prototyping work for this detector are discussed

3D silicon strip detectors

International Nuclear Information System (INIS)

Parzefall, Ulrich; Bates, Richard; Boscardin, Maurizio; Dalla Betta, Gian-Franco; Eckert, Simon; Eklund, Lars; Fleta, Celeste; Jakobs, Karl; Kuehn, Susanne; Lozano, Manuel; Pahn, Gregor; Parkes, Chris; Pellegrini, Giulio; Pennicard, David; Piemonte, Claudio; Ronchin, Sabina; Szumlak, Tomasz; Zoboli, Andrea; Zorzi, Nicola

2009-01-01

While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. Significant improvements in radiation hardness are required with respect to the LHC. Using a strawman layout for the new tracker of the ATLAS experiment as an example, silicon strip detectors (SSDs) with short strips of 2-3 cm length are foreseen to cover the region from 28 to 60 cm distance to the beam. These SSD will be exposed to radiation levels up to 10 15 N eq /cm 2 , which makes radiation resistance a major concern for the upgraded ATLAS tracker. Several approaches to increasing the radiation hardness of silicon detectors exist. In this article, it is proposed to combine the radiation hard 3D-design originally conceived for pixel-style applications with the benefits of the established planar technology for strip detectors by using SSDs that have regularly spaced doped columns extending into the silicon bulk under the detector strips. The first 3D SSDs to become available for testing were made in the Single Type Column (STC) design, a technological simplification of the original 3D design. With such 3D SSDs, a small number of prototype sLHC detector modules with LHC-speed front-end electronics as used in the semiconductor tracking systems of present LHC experiments were built. Modules were tested before and after irradiation to fluences of 10 15 N eq /cm 2 . The tests were performed with three systems: a highly focused IR-laser with 5μm spot size to make position-resolved scans of the charge collection efficiency, an Sr 90 β-source set-up to measure the signal levels for a minimum ionizing particle (MIP), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of the results obtained with 3D-STC-modules.

3D silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Parzefall, Ulrich [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany)], E-mail: ulrich.parzefall@physik.uni-freiburg.de; Bates, Richard [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Boscardin, Maurizio [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Dalla Betta, Gian-Franco [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Eckert, Simon [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Eklund, Lars; Fleta, Celeste [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Jakobs, Karl; Kuehn, Susanne [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Lozano, Manuel [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pahn, Gregor [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Str. 3, D-79104 Freiburg (Germany); Parkes, Chris [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Pellegrini, Giulio [Instituto de Microelectronica de Barcelona, IMB-CNM, CSIC, Barcelona (Spain); Pennicard, David [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Piemonte, Claudio; Ronchin, Sabina [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy); Szumlak, Tomasz [University of Glasgow, Department of Physics and Astronomy, Glasgow G12 8QQ (United Kingdom); Zoboli, Andrea [INFN and Universita' di Trento, via Sommarive 14, 38050 Povo di Trento (Italy); Zorzi, Nicola [FBK-irst, Center for Materials and Microsystems, via Sommarive 18, 38050 Povo di Trento (Italy)

2009-06-01

While the Large Hadron Collider (LHC) at CERN has started operation in autumn 2008, plans for a luminosity upgrade to the Super-LHC (sLHC) have already been developed for several years. This projected luminosity increase by an order of magnitude gives rise to a challenging radiation environment for tracking detectors at the LHC experiments. Significant improvements in radiation hardness are required with respect to the LHC. Using a strawman layout for the new tracker of the ATLAS experiment as an example, silicon strip detectors (SSDs) with short strips of 2-3 cm length are foreseen to cover the region from 28 to 60 cm distance to the beam. These SSD will be exposed to radiation levels up to 10{sup 15}N{sub eq}/cm{sup 2}, which makes radiation resistance a major concern for the upgraded ATLAS tracker. Several approaches to increasing the radiation hardness of silicon detectors exist. In this article, it is proposed to combine the radiation hard 3D-design originally conceived for pixel-style applications with the benefits of the established planar technology for strip detectors by using SSDs that have regularly spaced doped columns extending into the silicon bulk under the detector strips. The first 3D SSDs to become available for testing were made in the Single Type Column (STC) design, a technological simplification of the original 3D design. With such 3D SSDs, a small number of prototype sLHC detector modules with LHC-speed front-end electronics as used in the semiconductor tracking systems of present LHC experiments were built. Modules were tested before and after irradiation to fluences of 10{sup 15}N{sub eq}/cm{sup 2}. The tests were performed with three systems: a highly focused IR-laser with 5{mu}m spot size to make position-resolved scans of the charge collection efficiency, an Sr{sup 90}{beta}-source set-up to measure the signal levels for a minimum ionizing particle (MIP), and a beam test with 180 GeV pions at CERN. This article gives a brief overview of

Silicon subsystem mechanical engineering work for the solenoidal detector collaboration

Energy Technology Data Exchange (ETDEWEB)

Miller, W.O.; Barney, M.; Byrd, D.; Christensen, R.W.; Dransfield, G.; Elder, M.; Gamble, M.; Crastataro, C.; Hanlon, J.; Jones, D.C. [and others

1995-02-01

The silicon tracking system (STS) for the Solenoidal Detector Collaboration (SDC) represented an order of magnitude increase in size over any silicon system that had been previously built or even planned. In order to meet its performance requirements, it could not simply be a linear scaling of earlier systems, but instead required completely new concepts. The small size of the early systems made it possible to simply move the support hardware and services largely outside the active volume of the system. For a system five meters long, that simply is not an option. The design of the STS for the SDC experiment was the result of numerous compromises between the capabilities required to do the physics and the limitations imposed by cost, material properties, and silicon strip detector characteristics. From the point of view of the physics, the silicon system should start as close to the interaction point as possible. In addition, the detectors should measure the position of particles passing through them with no errors, and should not deflect or interact with the particles in any way. However, cost, radiation damage, and other factors limiting detector performance dictated, other, more realistic values. Radiation damage limited the inner radius of the silicon detectors to about 9 cm, whereas cost limited the outer radius of the detectors to about 50 cm. Cost also limits the half length of the system to about 250 cm. To control the effects of radiation damage on the detectors required operating the system at a temperature of 0{degrees}C or below, and maintaining that temperature throughout life of the system. To summarize, the physics and properties of the silicon strip detectors requires that the detectors be operated at or below 0{degrees}C, be positioned very accurately during assembly and remain positionally stable throughout their operation, and that all materials used be radiation hard and have a large thickness for one radiation length.

Silicon subsystem mechanical engineering work for the solenoidal detector collaboration

International Nuclear Information System (INIS)

Miller, W.O.; Barney, M.; Byrd, D.; Christensen, R.W.; Dransfield, G.; Elder, M.; Gamble, M.; Crastataro, C.; Hanlon, J.; Jones, D.C.

1995-01-01

The silicon tracking system (STS) for the Solenoidal Detector Collaboration (SDC) represented an order of magnitude increase in size over any silicon system that had been previously built or even planned. In order to meet its performance requirements, it could not simply be a linear scaling of earlier systems, but instead required completely new concepts. The small size of the early systems made it possible to simply move the support hardware and services largely outside the active volume of the system. For a system five meters long, that simply is not an option. The design of the STS for the SDC experiment was the result of numerous compromises between the capabilities required to do the physics and the limitations imposed by cost, material properties, and silicon strip detector characteristics. From the point of view of the physics, the silicon system should start as close to the interaction point as possible. In addition, the detectors should measure the position of particles passing through them with no errors, and should not deflect or interact with the particles in any way. However, cost, radiation damage, and other factors limiting detector performance dictated, other, more realistic values. Radiation damage limited the inner radius of the silicon detectors to about 9 cm, whereas cost limited the outer radius of the detectors to about 50 cm. Cost also limits the half length of the system to about 250 cm. To control the effects of radiation damage on the detectors required operating the system at a temperature of 0 degrees C or below, and maintaining that temperature throughout life of the system. To summarize, the physics and properties of the silicon strip detectors requires that the detectors be operated at or below 0 degrees C, be positioned very accurately during assembly and remain positionally stable throughout their operation, and that all materials used be radiation hard and have a large thickness for one radiation length

Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket

Science.gov (United States)

Zhao, Wenhan; Liu, Lijun

2017-01-01

The continuous-feeding Czochralski method is an effective method to reduce the cost of single crystal silicon. By promoting the crystal growth rate, the cost can be reduced further. However, more latent heat will be released at the melt-crystal interface under a high crystal growth rate. In this study, a water-cooled jacket was applied to enhance the heat transfer at the melt-crystal interface. Quasi-steady-state numerical calculation was employed to investigate the impact of the water-cooled jacket on the heat transfer at the melt-crystal interface. Latent heat released during the crystal growth process at the melt-crystal interface and absorbed during feedstock melting at the feeding zone was modeled in the simulations. The results show that, by using the water-cooled jacket, heat transfer in the growing crystal is enhanced significantly. Melt-crystal interface deflection and thermal stress increase simultaneously due to the increase of radial temperature at the melt-crystal interface. With a modified heat shield design, heat transfer at the melt-crystal interface is well controlled. The crystal growth rate can be increased by 20%.

A silicon pad shower maximum detector for a Shashlik calorimeter

International Nuclear Information System (INIS)

Alvsvaag, S.J.; Maeland, O.A.; Klovning, A.

1995-01-01

The new luminosity monitor of the DELPHI detector, STIC (Small angle TIle Calorimeter), was built using a Shashlik technique. This technique does not provide longitudinal sampling of the showers, which limits the measurement of the direction of the incident particles and the e-π separation. For these reasons STIC was equipped with a Silicon Pad Shower Maximum Detector (SPSMD). In order to match the silicon detectors to the Shashlick read out by wavelength shifter (WLS) fibers, the silicon wafers had to be drilled with a precision better than 10μm without damaging the active area of the detectors. This paper describes the SPSMD with emphasis on the fabrication techniques and on the components used. Some preliminary results of the detector performance from data taken with a 45GeV electron beam at CERN are presented. (orig.)

Full-scale experiments on solid-pellets feed continuous Czochralski growth of silicon crystals

Science.gov (United States)

Anselmo, A.; Koziol, J.; Prasad, V.

1996-06-01

Two long-term solid-pellets feed continuous Czochralski growth experiments were performed in an industrial Czochralski crystal puller as an extension to our previous work [7]. The goals of these experiments were to examine how polysilicon pellets would melt in a standard Cz system, to discover the thermal effects the pellets would have on the overall melt, and to find if pellet addition could be an effective melt replenishment technique. These experiments demonstrate that the quality of the melt for the CCz growth is based heavily on the surface temperature of the melt. A novel characterization method ("impact severity") is developed to characterize the quality of the CCz melt. Stable feed rate and melt conditions were achieved for three different pull rates. These experiments demonstrate that the process is technically feasible, and can be retrofitted to the existing industrial systems. Several critical issues that need to be addressed to develop a successful CCz process are also discussed.

Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors

CERN Document Server

Peltola, T.

2014-01-01

During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense radiation environment than the present system was designed for. Thus, to upgrade the tracker to required performance level, comprehensive measurements and simulations studies have already been carried out. Essential information of the performance of an irradiated silicon detector is obtained by monitoring its charge collection efficiency (CCE). From the evolution of CCE with fluence, it is possible to directly observe the effect of the radiation induced defects to the ability of the detector to collect charge carriers generated by traversing minimum ionizing particles (mip). In this paper the numerically simulated CCE and CCE loss between the strips of irradiated silicon strip detectors are presented. The simulations based on Synopsys Sentaurus TCAD framework were performed ...

Commissioning of the recoil silicon detector for the HERMES experiment

International Nuclear Information System (INIS)

Pickert, N.C.

2008-02-01

The reconstruction of the missing mass is limited by the position and momentum resolution of the HERMES spectrometer. In order to reach a higher accuracy in the measurements the backscattered nucleon must also be detected. A detector suited for this must give the possibility, to determine the momentum of the particles over a very large range: from minimally ionizing particles up to protons, which are stopped in the detector. The detector must also be able to discriminate hadrons and mesons as well as cover the complete spatial region around the target. In the winter 2005-2006 such a recoil detector was installed in the HERMES experiment. The detector sonsists of three partial detectors, a silicon counter within the scattering chamber, a sintillating-fiber detector and a photon detector. Before the installation of the detector the silicon modules were tested in a bench test and checked together with the other particle detectors in a test experiment. A large part of this dissertation is dedicated to the planning and performance of these tests as well to the evaluation of them. It could be show, that the modules worked accordly to their specifications, however because of unexpectedly high noise a signal correction became necessary. Different models for the correction were developed and tested in the framework of these thesis. In spite of the high noise cosmic muons could be detected and their energy deposition measured with a signal-to-noise ratio of 2:1. In the winter break 2005-2006 the recoil detector was installed into the HERMES experiment. First diagnosis and analysis software was developed. The silicon detector measured successfully energy depositions of minimally ionizing particles up to protons stopped in the sensor. Minimally ionizing particles could be detected with a signal-to-noise ratio of 5:1. By means of track information of the scintillating-fiber detector protons could be discriminated from pions and other mesons by the silicon detector. The HERMES

Commissioning of the recoil silicon detector for the HERMES experiment

Energy Technology Data Exchange (ETDEWEB)

Pickert, N C

2008-02-15

The reconstruction of the missing mass is limited by the position and momentum resolution of the HERMES spectrometer. In order to reach a higher accuracy in the measurements the backscattered nucleon must also be detected. A detector suited for this must give the possibility, to determine the momentum of the particles over a very large range: from minimally ionizing particles up to protons, which are stopped in the detector. The detector must also be able to discriminate hadrons and mesons as well as cover the complete spatial region around the target. In the winter 2005-2006 such a recoil detector was installed in the HERMES experiment. The detector sonsists of three partial detectors, a silicon counter within the scattering chamber, a sintillating-fiber detector and a photon detector. Before the installation of the detector the silicon modules were tested in a bench test and checked together with the other particle detectors in a test experiment. A large part of this dissertation is dedicated to the planning and performance of these tests as well to the evaluation of them. It could be show, that the modules worked accordly to their specifications, however because of unexpectedly high noise a signal correction became necessary. Different models for the correction were developed and tested in the framework of these thesis. In spite of the high noise cosmic muons could be detected and their energy deposition measured with a signal-to-noise ratio of 2:1. In the winter break 2005-2006 the recoil detector was installed into the HERMES experiment. First diagnosis and analysis software was developed. The silicon detector measured successfully energy depositions of minimally ionizing particles up to protons stopped in the sensor. Minimally ionizing particles could be detected with a signal-to-noise ratio of 5:1. By means of track information of the scintillating-fiber detector protons could be discriminated from pions and other mesons by the silicon detector. The HERMES

Laboratory course on silicon strip detectors

International Nuclear Information System (INIS)

Montano, Luis M

2005-01-01

In this laboratory course we present an elementary introduction to the characteristics and applications of silicon detectors in High-Energy Physics, through performing some measurements which give an overview of the properties of these detectors as position resolution. The principles of operation are described in the activities the students have to develop together with some exercises to reinforce their knowledge on these devices

A large area silicon UCN detector with the analysis of UCN polarization

International Nuclear Information System (INIS)

Lasakov, M.S.; Serebrov, A.P.; Khusainov, A.Kh.; Pustovoit, A.; Borisov, Yu.V.; Fomin, A.K.; Geltenbort, P.; Kon'kov, O.I.; Kotina, I.M.; Shablii, A.I.; Solovei, V.A.; Vasiliev, A.V.

2005-01-01

A silicon UCN detector with an area of 45cm 2 and with a 6 LiF converter was developed at PNPI. The spectral efficiency of the silicon UCN detector was measured by means of a gravitational spectrometer at ILL. The sandwich-type detector from two silicon plates with a 6 LiF converter placed between them was also studied. Using this type of technology the UCN detector with analysis of polarization was developed and tested. The analyzing power of this detector assembly reaches up to 75% for the main part of UCN spectrum. This UCN detector with analysis of UCN polarization can be used in the new EDM spectrometer

Portable triple silicon detector telescope spectrometer for skin dosimetry

DEFF Research Database (Denmark)

Helt-Hansen, J.; Larsen, H.E.; Christensen, P.

1999-01-01

The features of a newly developed portable beta telescope spectrometer are described. The detector probe uses three silicon detectors with the thickness: 50 mu m/150 mu m/7000 mu m covered by a 2 mu m thick titanium window. Rejection of photon contributions from mixed beta/photon exposures...... is achieved by coincidence requirements between the detector signals. The silicon detectors, together with cooling aggregate, bias supplies, preamplifiers and charge generation for calibration are contained in a handy detector probe. Through a 3- or 10-m cable the detector unit is connected to a compact...... detectors. The LabVIEW(TM) software distributed by National Instruments was used for all program developments for the spectrometer, comprising also the capability of evaluating the absorbed dose rates from the measured beta spectra. The report describes the capability of the telescope spectrometer...

Silicon Drift Detectors development for position sensing

International Nuclear Information System (INIS)

Castoldi, A.; Guazzoni, C.; Hartmann, R.; Strueder, L.

2007-01-01

Novel Silicon Drift Detectors (SDDs) with multi-linear architecture specifically intended for 2D position sensing and imaging applications are presented and their achievable spatial, energy and time resolution are discussed. The capability of providing a fast timing of the interaction with nanosecond time resolution is a new available feature that allows operating the drift detector in continuous readout mode for coincidence imaging applications either with an external trigger or in self-timing. The application of SDDs with multi-linear architecture to Compton electrons' tracking within a single silicon layer and the achieved experimental results will be discussed

Low dose radiation damage effects in silicon strip detectors

International Nuclear Information System (INIS)

Wiącek, P.; Dąbrowski, W.

2016-01-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

Low dose radiation damage effects in silicon strip detectors

Science.gov (United States)

Wiącek, P.; Dąbrowski, W.

2016-11-01

The radiation damage effects in silicon segmented detectors caused by X-rays have become recently an important research topic driven mainly by development of new detectors for applications at the European X-ray Free Electron Laser (E-XFEL). However, radiation damage in silicon strip is observed not only after extreme doses up to 1 GGy expected at E-XFEL, but also at doses in the range of tens of Gy, to which the detectors in laboratory instruments like X-ray diffractometers or X-ray spectrometers can be exposed. In this paper we report on investigation of radiation damage effects in a custom developed silicon strip detector used in laboratory diffractometers equipped with X-ray tubes. Our results show that significant degradation of detector performance occurs at low doses, well below 200 Gy, which can be reached during normal operation of laboratory instruments. Degradation of the detector energy resolution can be explained by increasing leakage current and increasing interstrip capacitance of the sensor. Another observed effect caused by accumulation of charge trapped in the surface oxide layer is change of charge division between adjacent strips. In addition, we have observed unexpected anomalies in the annealing process.

Recent progress in low-temperature silicon detectors

International Nuclear Information System (INIS)

Abreu, M.; D'Ambrosio, N.; Bell, W.; Berglund, P.; Borchi, E.; Boer, W. de; Borer, K.; Bruzzi, M.; Buontempo, S.; Casagrande, L.; Chapuy, S.; Cindro, V.; Devine, S.R.H.; Dezillie, B.; Dierlamm, A.; Dimcovski, Z.; Eremin, V.; Esposito, A.; Granata, V.; Grigoriev, E.; Grohmann, S.; Hauler, F.; Heijne, E.; Heising, S.; Hempel, O.; Herzog, R.; Haerkoenen, J.; Janos, S.; Jungermann, L.; Konorov, I.; Li, Z.; Lourenco, C.; De Masi, R.; Menichelli, D.; Mikuz, M.; Niinikoski, T.O.; O'Shea, V.; Pagano, S.; Palmieri, V.G.; Paul, S.; Pretzl, K.; Smith, K.; Solano, B. Pere; Sousa, P.; Pirollo, S.; Rato Mendes, P.; Ruggiero, G.; Sonderegger, P.; Tuominen, E.; Verbitskaya, E.; Da Via, C.; Watts, S.; Wobst, E.; Zavrtanik, M.

2003-01-01

The CERN RD39 Collaboration studies the possibility to extend the detector lifetime in a hostile radiation environment by operating them at low temperatures. The outstanding illustration is the Lazarus effect, which showed a broad operational temperature range around 130 K for neutron irradiated silicon detectors

ATLAS Tracker Upgrade: Silicon Strip Detectors for the sLHC

CERN Document Server

Koehler, M; The ATLAS collaboration

2010-01-01

To extend the physics potential of the Large Hadron Colider (LHC) at CERN, upgrades of the accelerator complex and the detectors towards the Super-LHC (sLHC) are foreseen. The upgrades, separated in Phase-1 and Phase-2, aim at increasing the luminosity while leaving the energy of the colliding particles (7 TeV per proton beam) unchanged. After the Phase-2 upgrade the instantaneous luminosity will be a factor of 5-10 higher than the design luminosity of the LHC. Due to the increased track rate and extreme radiation levels for the tracking detectors, upgrades of the detectors are necessary. At ATLAS, one of the two general purpose detectors at the LHC, the current inner detector will be replaced by an all-silicon tracker. This article describes the plans for the Phase-2 upgrade of the silicon strip detector of ATLAS. Radiation hard n-in-p silicon detectors with shorter strips than currently installed in ATLAS are planned. Results of measurements with these sensors and plans for module designs will be discussed.

Effect of SiO$_{2}$ passivating layer in segmented silicon planar detectors on the detector response

CERN Document Server

Verbitskaya, Elena; Eremin, Vladimir; Golubkov, S; Konkov, K; Roe, Shaun; Ruggiero, G; Sidorov, A; Weilhammer, Peter

2004-01-01

Silicon detectors with a fine segmentation (micropixel and microstrip) are the main type of detectors used in the inner trackers of LHC experiments. Due to the high luminosity of the LHC machines they are required to have a fast response to fit the short shaping time of 25 ns and to be radiation hard. Evaluation of silicon microstrip detectors developed for the ATLAS silicon tracker and carried out under collaboration of CERN and PTI has shown the reversal of the pulse polarity in the detector response to short- range radiation. Since the negative signal is of about 30% of the normal positive one, the effect strongly reduces the charge collection efficiency in irradiated detectors. The investigation presents the consideration on the origin of a negative response in Si microstrip detectors and the experimental proof of the model. The study of the effect has been carried out using "baby" strip detectors with a special design: each strip has a window in a metallization, which covers the p/sup +/ implant. The sca...

Planar edgeless silicon detectors for the TOTEM experiment

CERN Document Server

Ruggiero, G; Noschis, E

2007-01-01

Recently the first prototype of microstrip edgeless silicon detector for the TOTEM experiment has been successfully produced and tested. This detector is fabricated with standard planar technology, reach sensitivity 50 μm from the cut edge and can operate with high bias at room temperature. These almost edgeless detectors employ a newly conceived terminating structure, which, although being reduced with respect to the conventional ones, still controls the electric field at the device periphery and prevents leakage current breakdown for high bias. Detectors with the new terminating structure are being produced now and will be installed at LHC in the Roman Pots, a special beam insertion, to allow the TOTEM experiment to detect leading protons at 10 σ from the beam. This paper will describe this new terminating structure for planar silicon detectors, how it applies to big size devices and the experimental tests proving their functionality.

Micro-channel cooling for silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Flaschel, Nils

2017-12-15

Silicon tracking detectors employed in high-energy physics are located very close to the interaction points of the colliding particle beams. The high energetic radiation emerging from the interaction induces defects into the silicon, downgrading the efficiency to collect the charges created by passing particles and increasing the noise while data taking. Cooling the sensors to low temperatures can help to prevent defects and maintain a high efficiency and lower noise level. In order to maximize the LHC's discovery potential, the collider and its detectors will be upgraded to a higher luminosity around 2024. The conditions inside the detector will become harsher demanding that the technology must adapt to the new situation. Radiation damage is already an issue in the current ATLAS detector and therefore a huge number of parameters are constantly monitored and evaluated to ensure optimal operation. To provide the best possible settings the behavior of the sensors inside the ATLAS Inner Detector is predicted using simulations. In this work several parameters in the simulation including the depletion voltage and the crosstalk between sensor strips of the SCT detector are analyzed and compared with data. The main part of this work concerns the investigation of a novel cooling system based on microchannels etched into silicon in a generic research and development project at DESY and IMB-CNM. A channel layout is designed providing a homogeneous flow distribution across a large surface area and tested in a computational fluid simulation before its production. Two different fabrication techniques, anodic and eutectic bonding, are used to test prototypes with differing mechanical and thermal properties. Hydromechanical and thermal measurements are performed to fully characterize the flow inside the device and the thermal properties of the prototype in air and in a vacuum. The thermal behavior is analyzed by means of local measurements with thermal resistors and infrared

Micro-channel cooling for silicon detectors

International Nuclear Information System (INIS)

Flaschel, Nils

2017-12-01

Silicon tracking detectors employed in high-energy physics are located very close to the interaction points of the colliding particle beams. The high energetic radiation emerging from the interaction induces defects into the silicon, downgrading the efficiency to collect the charges created by passing particles and increasing the noise while data taking. Cooling the sensors to low temperatures can help to prevent defects and maintain a high efficiency and lower noise level. In order to maximize the LHC's discovery potential, the collider and its detectors will be upgraded to a higher luminosity around 2024. The conditions inside the detector will become harsher demanding that the technology must adapt to the new situation. Radiation damage is already an issue in the current ATLAS detector and therefore a huge number of parameters are constantly monitored and evaluated to ensure optimal operation. To provide the best possible settings the behavior of the sensors inside the ATLAS Inner Detector is predicted using simulations. In this work several parameters in the simulation including the depletion voltage and the crosstalk between sensor strips of the SCT detector are analyzed and compared with data. The main part of this work concerns the investigation of a novel cooling system based on microchannels etched into silicon in a generic research and development project at DESY and IMB-CNM. A channel layout is designed providing a homogeneous flow distribution across a large surface area and tested in a computational fluid simulation before its production. Two different fabrication techniques, anodic and eutectic bonding, are used to test prototypes with differing mechanical and thermal properties. Hydromechanical and thermal measurements are performed to fully characterize the flow inside the device and the thermal properties of the prototype in air and in a vacuum. The thermal behavior is analyzed by means of local measurements with thermal resistors and infrared

Fabrication of detectors and transistors on high-resistivity silicon

International Nuclear Information System (INIS)

Holland, S.

1988-06-01

A new process for the fabrication of silicon p-i-n diode radiation detectors is described. The utilization of backside gettering in the fabrication process results in the actual physical removal of detrimental impurities from critical device regions. This reduces the sensitivity of detector properties to processing variables while yielding low diode reverse-leakage currents. In addition, gettering permits the use of processing temperatures compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon p-i-n diodes have been fabricated simultaneously on 10 kΩ/centerreverse arrowdot/cm silicon using conventional integrated-circuit processing techniques. 25 refs., 5 figs

Silicon-CsI detector array for heavy-ion reactions

CERN Document Server

Norbeck, E; Pogodin, P I; Cheng, Y W; Ingram, F D; Bjarki, O; Grévy, S; Magestro, D J; Molen, A M V; Westfall, G D

2000-01-01

An array of 60 silicon-CsI(Tl) detector telescopes has been developed along with associated electronics. The close packing of the telescopes required novel designs for the photodiodes and the silicon DELTA E detectors. Newly developed electronics include preamplifiers, shaping amplifiers, test pulse circuitry, and a module to monitor leakage currents in the silicon diodes. The array covers angles from 5 deg. to 18 deg. in the 4 pi Array at the National Superconducting Cyclotron Laboratory at Michigan State University. It measures protons to 150 MeV and has isotopic resolution for intermediate mass nuclei.

Radiation hard silicon particle detectors for HL-LHC—RD50 status report

Energy Technology Data Exchange (ETDEWEB)

Terzo, S., E-mail: Stefano.Terzo@mpp.mpg.de

2017-02-11

It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC). The Phase-II-Upgrade scheduled for 2024 will mean unprecedented radiation levels, way beyond the limits of the silicon trackers currently employed. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on these results, we will give recommendations for the silicon detectors to be used at the different radii of tracking systems in the LHC detector upgrades. In order to complement the measurements, we also perform detailed simulation studies of the sensors. - Highlights: • The RD50 collaboration investigates the radiation hardness of silicon sensors. • Different approaches to simulate the detector response after irradiation are shown. • HV-CMOS are cost-effective solution for the outer pixel layers at HL-LHC. • 3D and thin planar sensors with slim edges are solutions for innermost layers at HL-LHC. • Sensors with intrinsic gain are investigated to develop ultra-fast silicon detectors.

Distribution of electric field and charge collection in silicon strip detectors

International Nuclear Information System (INIS)

Anokhin, I.E.; Zinets, O.S.

1995-01-01

The distribution of electric field in silicon strip detectors is analyzed in the case of dull depletion as well as for partial depletion. Influence of inhomogeneous electric fields on the charge collection and performances of silicon strip detectors is discussed

Assessment of a silicon detector for pulsed neutron scattering experiments

International Nuclear Information System (INIS)

Tardocchi, M.; Arnaboldi, C.; Gorini, G.; Imberti, S.; Pessina, G.; Previtali, E.; Andreani, C.; Pietropaolo, A.; Senesi, R.

2004-01-01

Resonance detectors (RD) are being developed for neutron spectroscopy in the epithermal energy region at spallation neutron sources. Different choices of converter foils and gamma spectrometers are being compared as part of an optimization and selection process within the TECHNI project. This paper reports on the design of a silicon detector system and some preliminary tests on the VESUVIO spectrometer. The detector has a good efficiency in the X-ray energy range, where two intense photon peaks (at 12 and 48 keV) are expected to be emitted following neutron capture in a uranium converter foil. The detector energy resolution has been improved by nitrogen vapor cooling of the silicon chip and by careful design of the preamplifier electronics. Neutron time of flight spectra have been measured on VESUVIO when the converter foil is placed in the neutron beam. In that case, the detector response is dominated by a continuum due to Compton detection of gammas of higher energy. These results provide a basis for a critical assessment of the applicability of silicon detectors for RD measurements of epithermal neutrons

Position sensitive silicon detectors inside the Tevatron collider

International Nuclear Information System (INIS)

Apollinari, G.; Bedeschi, F.; Bellettini, G.; Bosi, F.; Bosisio, L.; Cervelli, F.; Del Fabbro, R.; Dell'Orso, M.; Di Virgilio, A.; Focardi, E.; Giannetti, P.; Giorgi, M.; Menzione, A.; Ristori, L.; Scribano, A.; Sestini, P.; Stefanini, A.; Tonelli, G.; Zetti, F.; Bertolucci, S.; Cordelli, M.; Curatolo, M.; Dulach, B.; Esposito, B.; Giromini, P.; Miscetti, S.; Sansoni, A.

1986-01-01

Four position sensitive silicon detectors have been tested inside the Tevatron beam pipe at Fermilab. The system is the prototype of the small angle silicon spectrometer designed to study primarily p-anti p elastic and diffractive cross-sections at the Collider of Fermilab (CDF). Particles in the beam halo during p-anti p storage tests were used to study the performance of the detectors. Efficiency, linearity of response and spatial resolution are shown. Measurements performed at different distances from the beam axis have shown that the detectors could be operated at 8.5 mm from the beam with low rates and no disturbance to the circulating beams. This distance corresponds to about 11 times the standard half-width of the local beam envelope. The behaviour of the detectors with the radiation dose has also been investigated. (orig.)

Epitaxy - a new technology for fabrication of advanced silicon radiation detectors

International Nuclear Information System (INIS)

Kemmer, J.; Wiest, F.; Pahlke, A.; Boslau, O.; Goldstrass, P.; Eggert, T.; Schindler, M.; Eisele, I.

2005-01-01

Twenty five years after the introduction of the planar process to the fabrication of silicon radiation detectors a new technology, which replaces the ion implantation doping by silicon epitaxy is presented. The power of this new technique is demonstrated by fabrication of silicon drift detectors (SDDs), whereby both the n-type and p-type implants are replaced by n-type and p-type epi-layers. The very first SDDs ever produced with this technique show energy resolutions of 150 eV for 55 Fe at -35 deg C. The area of the detectors is 10 mm 2 and the thickness 300 μm. The high potential of epitaxy for future detectors with integrated complex electronics is described

Silicon radiation detector analysis using back electron beam induced current

International Nuclear Information System (INIS)

Guye, R.

1987-01-01

A new technique for the observation and analysis of defects in silicon radiation detectors is described. This method uses an electron beam from a scanning electron microscope (SEM) impinging on the rear side of the p + n junction of the silicon detector, which itself is active and detects the electron beam induced current (EBIC). It is shown that this current is a sensitive probe of localized trapping centers, either at the junction surface or somewhere in the volume of the silicon crystal. (orig.)

Diamond and silicon pixel detectors in high radiation environments

Energy Technology Data Exchange (ETDEWEB)

Tsung, Jieh-Wen

2012-10-15

Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10{sup 16} particles per cm{sup 2}, which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10{sup 15} particles per cm{sup 2}.

Diamond and silicon pixel detectors in high radiation environments

International Nuclear Information System (INIS)

Tsung, Jieh-Wen

2012-10-01

Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10 16 particles per cm 2 , which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10 15 particles per cm 2 .

Portable triple silicon detector telescope spectrometer for skin dosimetry

CERN Document Server

Helt-Hansen, J; Christensen, P

1999-01-01

The features of a newly developed portable beta telescope spectrometer are described. The detector probe uses three silicon detectors with the thickness: 50 mu m/150 mu m/7000 mu m covered by a 2 mu m thick titanium window. Rejection of photon contributions from mixed beta/photon exposures is achieved by coincidence requirements between the detector signals. The silicon detectors, together with cooling aggregate, bias supplies, preamplifiers and charge generation for calibration are contained in a handy detector probe. Through a 3- or 10-m cable the detector unit is connected to a compact, portable processing unit including a laptop computer executing control, monitor, histogram and display tasks. The use of digital signal processing at an early stage of the signal chain has facilitated the achievement of a compact, low-weight device. 256 channels are available for each of the three detectors. The LabVIEW sup T sup M software distributed by National Instruments was used for all program developments for the sp...

Naturally occurring 32 Si and low-background silicon dark matter detectors

Energy Technology Data Exchange (ETDEWEB)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope Si-32 represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of Si-32 and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the Si-32 concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon “ore” and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of Si-32-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in Si-32. To quantitatively evaluate the Si-32 content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon-based detectors with low levels of Si-32, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

Naturally occurring 32Si and low-background silicon dark matter detectors

Science.gov (United States)

Orrell, John L.; Arnquist, Isaac J.; Bliss, Mary; Bunker, Raymond; Finch, Zachary S.

2018-05-01

The naturally occurring radioisotope 32Si represents a potentially limiting background in future dark matter direct-detection experiments. We investigate sources of 32Si and the vectors by which it comes to reside in silicon crystals used for fabrication of radiation detectors. We infer that the 32Si concentration in commercial single-crystal silicon is likely variable, dependent upon the specific geologic and hydrologic history of the source (or sources) of silicon "ore" and the details of the silicon-refinement process. The silicon production industry is large, highly segmented by refining step, and multifaceted in terms of final product type, from which we conclude that production of 32Si-mitigated crystals requires both targeted silicon material selection and a dedicated refinement-through-crystal-production process. We review options for source material selection, including quartz from an underground source and silicon isotopically reduced in 32Si. To quantitatively evaluate the 32Si content in silicon metal and precursor materials, we propose analytic methods employing chemical processing and radiometric measurements. Ultimately, it appears feasible to produce silicon detectors with low levels of 32Si, though significant assay method development is required to validate this claim and thereby enable a quality assurance program during an actual controlled silicon-detector production cycle.

Defect characterization in high-purity silicon after γ- and hadron irradiation

International Nuclear Information System (INIS)

Stahl, J.

2004-07-01

The challenge for silicon particle detectors in future high energy physics experiments caused by extreme radiation fields can only be met by an appropriate defect engineering of the starting material. Appreciable improvements had already been obtained by enriching high resistivity float zone silicon with oxygen as demonstrated by the CERN RD48 collaboration. This thesis will focus on the difference observed after irradiation between standard and oxygenated float zone and detector grade Czochralski silicon. Results obtained with diodes manufactured on epitaxial layers are also included, envisioning effects arising from the possible migration of impurities during the crystal growth from the oxygen rich Czochralski substrate. Deep level transient spectroscopy (DLTS) and thermally stimulated current (TSC) measurements have been performed for defect characterization after γ- and hadron irradiation. Also a new high resolution DLTS technique has been used for the first time to separate defect levels with similar parameters. During the microscopic studies additionally to the well known defects like VO i , V 2 , C i O i or VP, four new radiation induced defects have been discovered and characterized. Two of these defects are closely correlated with the detector performance: A deep acceptor labeled as I-defect, and a bistable donor (BD). The formation of the I-defect is strongly suppressed in oxygen rich materials, while the formation of the BD is suppressed in oxygen lean material. With their properties the I- and the BD-defect are able to explain the different macroscopic behavior of standard and oxygen enriched float zone silicon after γ-irradiation. Furthermore, the BD defect is most probably responsible for the observation that in Cz and Epi diodes space charge sign inversion does not occur even after high fluences of proton irradiation. Additionally the γ-irradiated diodes were annealed at temperatures between 100 C and 350 C. During these studies some new reaction

Imaging monolithic silicon detector telescopes

International Nuclear Information System (INIS)

Amorini, F.; Sipala, V.; Cardella, G.; Boiano, C.; Carbone, B.; Cosentino, L.; Costa, E.; Di Pietro, A.; Emanuele, U.; Fallica, G.; Figuera, P.; Finocchiaro, P.; La Guidara, E.; Marchetta, C.; Pappalardo, A.; Piazza, A.; Randazzo, N.; Rizzo, F.; Russo, G.V.; Russotto, P.

2008-01-01

We show the results of some test beams performed on a new monolithic strip silicon detector telescope developed in collaboration with the INFN and ST-microelectronics. Using an appropriate design, the induction on the ΔE stages, generated by the charge released in the E stage, was used to obtain the position of the detected particle. The position measurement, together with the low threshold for particle charge identification, allows the new detector to be used for a large variety of applications due to its sensitivity of only a few microns measured in both directions

The H1 silicon vertex detector

International Nuclear Information System (INIS)

Pitzl, D.; Behnke, O.; Biddulph, M.; Boesiger, K.; Eichler, R.; Erdmann, W.; Gabathuler, K.; Gassner, J.; Haynes, W.J..; Horisberger, R.; Kausch, M.; Lindstroem, M.; Niggli, H.; Noyes, G.; Pollet, P.; Steiner, S.; Streuli, S.; Szeker, K.; Truoel, P.

2000-01-01

The design, construction and performance of the H1 silicon vertex detector is described. It consists of two cylindrical layers of double-sided, double-metal silicon sensors read out by a custom designed analog pipeline chip. The analog signals are transmitted by optical fibres to a custom-designed ADC board and are reduced on PowerPC processors. Details of the design and construction are given and performance figures from the first data-taking periods are presented

Characterising large area silicon drift detectors with MOS injectors

International Nuclear Information System (INIS)

Bonvicini, V.; Rashevsky, A.; Vacchi, A.

1999-01-01

In the framework of the INFN DSI project, the first prototypes of a large-area Silicon Drift Detector (SDD) have been designed and produced on 5'' diameter wafers of Neutron Transmutation Doped (NTD) silicon with a resistivity of 3000 Ω·cm. The detector is a 'butterfly' bi-directional structure with a drift length of 32 mm and the drifting charge is collected by two arrays of anodes having a pitch of 200 μm. The high-voltage divider is integrated on-board and is realised with p + implantations. For test and calibration purposes, the detector has a new type of MOS injector. The paper presents results obtained to injecting charge at the maximum drift distance (32mm) from the anodes by means of the MOS injecting structure, As front-end electronics, the authors have used a 32-channels low-noise bipolar VLSI circuit (OLA, Omni-purpose Low-noise Amplifer) specifically designed for silicon drift detectors. The uniformity of the drift time in different regions of the sensitive area and its dependence on the ambient temperature are studied

Silicon Detectors for the sLHC - an Overview of Recent RD50 Results

CERN Document Server

Pellegrini, Giulio

2009-01-01

It is foreseen to significantly increase the luminosity of the Large Hadron Collider(LHC) at CERN around 2018 by upgrading the LHC towards the sLHC (Super-LHC). Due to the radiation damage to the silicon detectors used, the physics experiment will require new tracking detectors for sLHC operation. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors on the innermost layers. The radiation hardness of these new sensors must surpass the one of LHC detectors by roughly an order of magnitude. Within the CERN RD50 collaboration, a massive R&D programme is underway to develop silicon sensors with sufficient radiation tolerance. Among the R&D topics are the development of new sensor types like 3D silicon detectors designed for the extreme radiation levels of the sLHC. We will report on the recent results obtained by RD50 from tests of several detector technologies and silicon materials at radiation levels corresponding to SLHC fluences. Based on ...

Role of crucible partition in improving Czochralski melt conditions

Science.gov (United States)

Jafri, I. H.; Prasad, V.; Anselmo, A. P.; Gupta, K. P.

1995-09-01

Many of the inhomogeneities and defects in the crystal grown from a pool of melt are because of the inherent unsteady growth kinetics and flow instabilities of the process. A scaled up version of the Czochralski process induces oscillatory and turbulent conditions in the melt, thereby resulting in the production of non-uniform silicon crystals. This numerical study reveals that a crucible partition shorter than the melt height can significantly improve the melt conditions. The obstruction at the bottom of the crucible is helpful but the variations in heat flux and flow patterns remain random. However, when the obstruction is introduced at the top of the melt, the flow conditions become much more desirable and oscillations are greatly suppressed. It is also found that a full-melt height partition or a double-crucible may not be a good choice. An optimal size of the blockage and its location to produce the most desirable process conditions will depend on the growth parameters including the melt height and the crucible diameter. These findings should be particularly useful in designing a solid polysilicon pellets-feed continuous Czochralski process for Si crystals.

Silicon micro-fluidic cooling for NA62 GTK pixel detectors

CERN Document Server

Romagnoli, G; Brunel, B; Catinaccio, A; Degrange, J; Mapelli, A; Morel, M; Noel, J; Petagna, P

2015-01-01

Silicon micro-channel cooling is being studied for efficient thermal management in application fields such as high power computing and 3D electronic integration. This concept has been introduced in 2010 for the thermal management of silicon pixel detectors in high energy physics experiments. Combining the versatility of standard micro-fabrication processes with the high thermal efficiency typical of micro-fluidics, it is possible to produce effective thermal management devices that are well adapted to different detector configurations. The production of very thin cooling devices in silicon enables a minimization of material of the tracking sensors and eliminates mechanical stresses due to the mismatch of the coefficient of thermal expansion between detectors and cooling systems. The NA62 experiment at CERN will be the first high particle physics experiment that will install a micro-cooling system to perform the thermal management of the three detection planes of its Gigatracker pixel detector.

Silicon Pixel Detectors for Synchrotron Applications

CERN Document Server

Stewart, Graeme Douglas

Recent advances in particle accelerators have increased the demands being placed on detectors. Novel detector designs are being implemented in many different areas including, for example, high luminosity experiments at the LHC or at next generation synchrotrons. The purpose of this thesis was to characterise some of these novel detectors. The first of the new detector types is called a 3D detector. This design was first proposed by Parker, Kenney and Segal (1997). In this design, doped electrodes are created that extend through the silicon substrate. When compared to a traditional photodiode with electrodes on the opposing surfaces, the 3D design can combine a reasonable detector thickness with a small electrode spacing resulting in fast charge collection and limited charge sharing. The small electrode spacing leads to the detectors having lower depletion voltages. This, combined with the fast collection time, makes 3D detectors a candidate for radiation hard applications. These applications include the upgra...

Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

Science.gov (United States)

2016-05-16

AFRL-AFOSR-JP-TR-2016-0054 Silicon based mid infrared SiGeSn heterostrcture emitters and detectors Greg Sun UNIVERSITY OF MASSACHUSETTS Final Report... Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors ” February 10, 2016 Principal Investigator: Greg Sun Engineering...diodes are incompatible with the CMOS process and therefore cannot be easily integrated with Si electronics . The GeSn mid IR detectors developed in

Solidification interface shape control in a continuous Czochralski silicon growth system

Science.gov (United States)

Wang, Chenlei; Zhang, Hui; Wang, Tihu; Zheng, Lili

2006-01-01

In a continuous Czochralski (CCZ) growth system with a shallow and replenished melt proposed earlier, large-diameter crystals may be grown at a high pull rate and reduced melt convection. The proposed system consists of two heaters. In this paper, the relationship between the solidification interface and the power levels is established. An interface control algorithm is developed to achieve the desired interface shape by adjusting the power level of the bottom heater. The control algorithm is incorporated into an existing process model, and the efficiency of the control algorithm is tested.

Silicon drift detectors coupled to CsI(Tl) scintillators for spaceborne gamma-ray detectors

International Nuclear Information System (INIS)

Marisaldi, M.; Fiorini, C.; Labanti, C.; Longoni, A.; Perotti, F.; Rossi, E.; Soltau, H.

2006-01-01

Silicon Drift Detectors (SDDs), thanks to their peculiar low noise characteristics, have proven to be excellent photodetectors for CsI(Tl) scintillation light detection. Two basic detector configurations have been developed: either a single SDD or a monolithic array of SDDs coupled to a single CsI(Tl) crystal. A 16 independent detectors prototype is under construction, designed to work in conjunction with the MEGA Compton telescope prototype under development at MPE, Garching, Germany. A single SDD coupled to a CsI(Tl) crystal has also been tested as a monolithic detector with an extended energy range between 1.5 keV and 1 MeV. The SDD is used as a direct X-ray detector for low energy photons interacting in silicon and as a scintillation light photodetector for photons interacting in the crystal. The type of interaction is identified by means of pulse shape discrimination technique. Detectors based on an array of SDDs coupled to a single CsI(Tl) crystal have also been built. The readout of these detectors is based on the Anger camera technique, and submillimeter spatial resolution can be achieved. The two detectors' approaches and their applications will be described

SILICON DRIFT DETECTORS FOR THE STAR/SVT EXPERIMENT AT RHIC

International Nuclear Information System (INIS)

TAKAHASHI, J.

1998-01-01

Large area linear Silicon Drift Detectors (SDD) were developed to be used in the Silicon Vertex Tracker (SVT) of the STAR experiment at the BNL relativistic heavy ion collider (RHIC). The SDD is in its final design and has been submitted for large scale production. Test results show that the detector exhibits excellent position resolution and low noise. A special characterization procedure was developed to test detector wafers in order to select good detectors for the SVT. Recently, 15 STAR/SVT SDD's were assembled as a tracking device in a BNL-AGS heavy ion experiment (E896). It is the first tracking application of these detectors and their corresponding front-end electronics in an experimental environment. Preliminary results indicating good detector performance are shown and discussed in this paper

Performance of silicon drift detectors in a magnetic field

International Nuclear Information System (INIS)

Castoldi, A.; Gatti, E.; Manzari, V.; Rehak, P.

1997-01-01

A study of the properties of silicon drift detectors in a magnetic field was carried out. A silicon drift detector with 41 anodes, providing unambiguous x and y position information, was used for measurements. Studies were done in three principal orientations of the detector relative to the direction of the magnetic field. The magnetic field was varied between 0 and 0.7 T and the drift field between 300 and 600 V/cm. Basic agreement with the theory of electron transport in semiconductors in a magnetic field was found. The transport properties of electrons in a magnetic field can be described by a mobility matrix. The components of the matrix depend on the electron mobility, Hall mobility and on the vector of the magnetic field. The precision of measurement was better than 0.2% for most of the parameters. For the electric field of a silicon drift detector, there is a first-order effect of the magnetic field only in one out of three principal directions. In this direction, the plane of the detector is perpendicular to the magnetic field and electrons drift at an angle α relative to the direction of the drift field. In two other principal directions, which are more important for tracking of the particles with drift detectors, there are no first-order magnetic effects. (orig.)

Radiation-hard semiconductor detectors for SuperLHC

CERN Document Server

Bruzzi, Mara; Al-Ajili, A A; Alexandrov, P; Alfieri, G; Allport, Philip P; Andreazza, A; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Baranova, E; Barcz, A; Basile, A; Bates, R; Belova, N; Betta, G F D; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Brukhanov, A; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Chilingarov, A G; Chren, D; Cindro, V; Citterio, M; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Cvetkov, V; Davies, G; Dawson, I; De Palma, M; Demina, R; Dervan, P; Dierlamm, A; Dittongo, S; Dobrzanski, L; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Franchenko, S; Fretwurst, E; Gamaz, F; García-Navarro, J E; García, C; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Gorelov, I; Goss, J; Gouldwell, A; Grégoire, G; Gregori, P; Grigoriev, E; Grigson, C; Grillo, A; Groza, A; Guskov, J; Haddad, L; Harding, R; Härkönen, J; Hauler, F; Hayama, S; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hruban, A; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Jin, T; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Kleverman, M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Kowalik, A; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lari, T; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Latushkin, S T; Lazanu, I; Lazanu, S; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Lindström, L; Linhart, V; Litovchenko, A P; Litovchenko, P G; Litvinov, V; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Mainwood, A; Makarenko, L F; Mandic, I; Manfredotti, C; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Meroni, C; Messineo, A; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Mozzanti, A; Murin, L; Naoumov, D; Nava, F; Nossarzhevska, E; Nummela, S; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piatkowski, B; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A I; Popule, J; Pospísil, S; Pucker, G; Radicci, V; Rafí, J M; Ragusa, F; Rahman, M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Roy, P; Ruzin, A; Ryazanov, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Sevilla, S G; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Spencer, N; Stahl, J; Stavitski, I; Stolze, D; Stone, R; Storasta, J; Strokan, N; Strupinski, W; Sudzius, M; Surma, B; Suuronen, J; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Troncon, C; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Vanni, P; Velthuis, J; Verbitskaya, E; Verzellesi, G; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N; de Boer, Wim

2005-01-01

An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10/sup 35/ cm-/sup 2/s-/sup 1/ has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 10 /sup 16/ cm-/sup 2/. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Flo...

Experience with the silicon strip detector of ALICE

NARCIS (Netherlands)

Nooren, G.J.L.

2009-01-01

The Silicon Strip Detector (SSD) forms the two outermost layers of the ALICE Inner Track- ing System (ITS), connecting the TPC with the inner layers of the ITS. The SSD consists of 1698 double-sided silicon microstrip modules, 95 μm pitch, distributed in two cylindrical bar- rels, whose radii are

Tracking with heavily irradiated silicon detectors operated at cryogenic temperatures

International Nuclear Information System (INIS)

Casagrande, L.; Barnett, B.M.; Bartalina, P.

1999-01-01

In this work, the authors show that a heavily irradiated double-sided silicon microstrip detector recovers its performance when operated at cryogenic temperatures. A DELPHI microstrip detector, irradiated to a fluence of ∼4 x 10 14 p/cm 2 , no longer operational at room temperature, cannot be distinguished from a non-irradiated one when operated at T < 120 K. Besides confirming the previously observed Lazarus effect in single diodes, these results establish, for the first time, the possibility of using standard silicon detectors for tracking applications in extremely demanding radiation environments

Silicon Strip Detectors for ATLAS at the HL-LHC Upgrade

CERN Document Server

Hara, K; The ATLAS collaboration

2012-01-01

The present ATLAS silicon strip (SCT) and transition radiation (TRT) trackers will be replaced with new silicon strip detectors, as part of the Inner Tracker System (ITK), for the Phase-2 upgrade of the Large Hadron Collider, HL-LHC. We have carried out intensive R&D programs to establish radiation harder strip detectors that can survive in a radiation level up to 3000 fb-1 of integrated luminosity based on n+-on-p microstrip detector. We describe main specifications for this year’s sensor fabrication, followed by a description of possible module integration schema

Large area silicon drift detectors for x-rays -- New results

International Nuclear Information System (INIS)

Iwanczyk, J.S.; Patt, B.E.; Tull, C.R.; Segal, J.D.; Kenney, C.J.; Hedman, B.; Hodgson, K.O.

1998-01-01

Large area silicon drift detectors, consisting of 8 mm and 12 mm diameter hexagons, were fabricated on 0.35 mm thick high resistivity n-type silicon. An external FET and a low-noise charge sensitive preamplifier were used for testing the prototype detectors. The detector performance was measured in the range 75 to 25 C using Peltier cooling, and from 0.125 to 6 micros amplifier shaping time. Measured energy resolutions were 159 eV FWHM and 263 eV FWHM for the 0.5 cm 2 and 1 cm 2 detectors, respectively (at 5.9 keV, -75 C, 6 micros shaping time). The uniformity of the detector response over the entire active area (measured using 560 nm light) was < 0.5%

Silicon micro-vertex detector for Belle II

International Nuclear Information System (INIS)

Mohanty, Gagan

2013-01-01

The Belle experiment at the KEK B-factory is Japan provided the landmark experimental confirmation of CP violation mechanism within the standard model that led to the physics Nobel prize in 2008. In its second phase, called Belle II, it would seek for the holy-grail of new physics using rare decays of B and D mesons and tau leptons as a probe, in complimentary to the direct searches carried out with the LHC experiments. An important component of this upgrade is to replace the innermost subdetector, namely the silicon micro-vertex detector (SVD). The new SVD will, like the old one, consist of four layers of double-sided silicon strip detector, but made from 6âĂİ wafers and located at higher radii as a novel, two-layer DEPFET pixel detector will be inserted very dose to the beam- pipe. Starting with the physics motivation, we discuss the design concept, fabrication and the Indian contributions toward the Belle II SVD. (author)

Experimental studies of radiation damage of silicon detectors

International Nuclear Information System (INIS)

Angelescu, T.; Ghete, V.M.; Ghiordanescu, N.; Lazanu, I.; Mihul, A.; Golutvin, I.; Lazanu, S.; Savin, I.; Vasilescu, A.; Biggeri, U.; Borchi, E.; Bruzzi, M.; Li, Z.; Kraner, H.W.

1994-02-01

New particle physics experiments are correlated with high luminosity and/or high energy. The new generation of colliding beam machines which will be constructed will make an extrapolation of a factor of 100 in the center of mass energy and of 1000 in luminosity beyond present accelerators. The scientific community hopes that very exciting physics results could be achieved this way, from the solution to the problem of electroweak symmetry breaking to the possible discovery of new, unpredicted phenomena. The particles which compose the radiation field are: electrons, pions, neutrons, protons and photons. It has become evident that the problem of the radiation resistance of detectors in this severe environment is a crucial one. This situation is complicated more by the fact that detectors must work all the run time of the machine, and better all the time of the experiment, without replacement (part or whole). So, studies related to the investigation of the radiation hardness of all detector parts, are developing. The studies are in part material and device characterization after irradiation, and in part technological developments, made in order to find harder, cheaper technologies, for larger surfaces. Semiconductor detectors have proven to be a good choice for vertex and calorimeter. Both fixed target machines and colliders had utilized in the past silicon junction detectors as the whole or part of the detection system. Precision beam hodoscopes and sophisticated trigger devices with silicon are equally used. The associated electronics in located near the detectors, and is subjected to the same radiation fields. Studies of material and device radiation hardness are developing in parallel. Here the authors present results on the radiation hardness of silicon, both as a bulk material and as detectors, to neutron irradiation at high fluences

Silicon lithium detector for x ray fluorescence

International Nuclear Information System (INIS)

Rodriguez Cabal, A. E.; Diaz Garcia, A.; Noriega Scull, C.; Martinez Munoz, O.; Diaz Cepeda, R.

1997-01-01

The Silicon Lithium detector is the system for the detection of nuclear radiation. It transforms the charge that was produced inside of Silicon material as a result of the incidence of particles and X rays, in voltage pulses at the output of the preamplifier. In this work was made the adjustment of the technological process of manufacture of the detector. Also was made the design and construction of the cryostat and preamplifier and then the validation of the system in a Cuban Dewar. The system, which was made for the first time in our country, has an energy resolution of 185 eV for the Fe-55 source (E=5.9 KeV), which has permitted its implementation in energy dispersive X ray fluorescence. (author) [es

Aleph silicon microstrip vertex detector

CERN Multimedia

Laurent Guiraud

1998-01-01

This microstrip vertex locator was located at the heart of the ALEPH experiment, one of the four experiments at the Large Electron-Positron (LEP) collider. In the experiments at CERN's LEP, which ran from 1989 to 2000, modern silicon microvertex detectors, such as those used at ALEPH, monitored the production of short-lived particles close to the beam pipe.

New technologies of silicon position-sensitive detectors for future tracker systems

CERN Document Server

Bassignana, Daniela; Lozano, M

In view of the new generation of high luminosity colliders, HL-LHC and ILC, a farther investigation of silicon radiation detectors design and technology is demanded, in order to satisfy the stringent requirements of the experiments at such sophisticated machines. In this thesis, innovative technologies of silicon radiation detectors for future tracking systems are proposed. Three dierent devices have been studied and designed with the help of dierent tools for computer simulations. They have been manufactured in the IMB-CNM clean room facilities in Barcelona and characterized with proper experimental set-ups in order to test the detectors capabilities and the quality and suitability of the technologies used for their fabrication. The rst technology deals with the upgrade of dedicated sensors for laser alignment systems in future tracker detectors. The design and technology of common single-sided silicon microstrip detectors have been slightly modied in order to improve IR light transmittance of the devices. T...

Coordinate determination of high energy charged particles by silicon strip detectors

International Nuclear Information System (INIS)

Anokhin, I.E.; Zinets, O.S.

2002-01-01

The coordinate determination accuracy of minimum ionizing and short-range particles by silicon strip detectors has been considered. The charge collection on neighboring strips of the detector is studied and the influence of diffusion and the electric field distribution on the accuracy of the coordinate determination is analyzed. It has been shown that coordinates of both minimum ionizing and short-range particles can be determined with accuracy to a few microns using silicon strip detectors. 11 refs.; 8 figs

X- and gamma-ray N+PP+ silicon detectors with high radiation resistance

International Nuclear Information System (INIS)

Petris, M.; Ruscu, R.; Moraru, R.; Cimpoca, V.

1998-01-01

We have investigated the use of p-type silicon detectors as starting material for X-and gamma-ray detectors because of several potential benefits it would bring: 1. high purity p-type silicon grown by the float-zone process exhibits better radial dopant uniformity than n-type float-zone silicon; 2. it is free of radiation damage due to the neutron transmutation doping process and behaves better in a radiation field because mainly acceptor like centers are created through the exposure and the bulk material type inversion does not occur as in the n-type silicon. But the p-type silicon, in combination with a passivating layer of silicon dioxide, leads to a more complex detector layout since the positive charge in the oxide causes an inversion in the surface layer under the silicon dioxide. Consequently, it would be expected that N + P diodes have a higher leakage current than P + N ones. All these facts have been demonstrated experimentally. These features set stringent requirements for the technology of p-type silicon detectors. Our work presents two new geometries and an improved technology for p-type high resistivity material to obtain low noise radiation detectors. Test structures were characterized before and after the gamma exposure with a cumulative dose in the range 10 4 - 5 x 10 6 rad ( 60 Co). Results indicate that proposed structures and their technology enable the development of reliable N + PP + silicon detectors. For some samples (0.8 - 12 mm 2 ), extremely low reverse currents were obtained and, in combination with a low noise charge preamplifier, the splitting of 241 Am X-ray lines was possible and also the Mn Kα line (5.9 keV) was extracted from the noise with a 1.9 keV FWHM at the room temperature. An experimental model of a nuclear probe based on these diodes was designed for X-ray detection applications. (authors)

Development of Microstrip Silicon Detectors for Star and ALICE

CERN Document Server

Arnold, L; Coffin, J P; Guillaume, G; Guthneck, L; Higueret, S; Hundt, F; Kühn, C E; Lutz, Jean Robert; Pozdniakov, S; Rami, F; Tarchini, A; Boucham, A; Bouvier, S; Erazmus, B; Germain, M; Giliberto, S; Martin, L; Le Moal, C; Roy, C; Colledani, C; Dulinski, W; Turchetta, R

1998-01-01

The physics program of STAR and ALICE at ultra-relativistic heavy ion colliders, RHIC and LHC respectively, requires very good tracking capabilities. Some specific quark gluon plasma signatures, based on strange matter measurements implies quite a good secondary vertex reconstruction.For this purpose, the inner trackers of both experiments are composed of high-granularity silicon detectors. The current status of the development of double-sided silicon microstrip detectors is presented in this work.The global performance for tracking purpose adn particle identification are first reviewed. Then tests of the detectors and of the associated readout electronics are described. In-beam measurements of noise, spatial resolution, efficiency and charge matching capability, as well as radiation hardness, are examined.

A 1024 pad silicon detector to solve tracking ambiguities in high multiplicity events

International Nuclear Information System (INIS)

Simone, S.; Catanesi, M.G.; Di Bari, D.; Didonna, V.; Elia, D.; Ghidini, B.; Lenti, V.; Manzari, V.; Nappi, E.

1996-01-01

Silicon detectors with two-dimensional pad readout have been designed and constructed for the WA97 experiment at CERN, in order to solve ambiguities for track reconstruction in a silicon microstrip telescope. A high density fanouts has been developed on a glass support to allow the electrical contacts between the detector and the front end electronics. Silicon pad detectors have been successfully operated both during the proton-Pb and Pb-Pb runs of the WA97 experiment. (orig.)

The readout system of the new H1 silicon detectors

International Nuclear Information System (INIS)

Buerger, J.; Hansen, K.; Lange, W.; Prell, S.; Zimmermann, W.; Henschel, H.; Haynes, W.J.; Noyes, G.W.; Joensson, L.; Gabathuler, K.; Horisberger, R.; Wagener, M.; Eichler, R.; Erdmann, W.; Niggli, H.; Pitzl, D.

1995-03-01

The H1 detector at HERA at DESY undergoes presently a major upgrade. In this context silicon strip detectors have been installed at beginning of 1995. The high bunch crossing frequency of HERA (10.4 MHz) demands a novel readout architecture which includes pipelining, signal processing and data reduction at a very early stage. The front end readout is hierarchically organized. The detector elements are read out by the APC chip which contains an analog pipeline and performs first background subtraction. Up to five readout chips are controlled by a Decoder Chip. The readout processor module (OnSiRoC) operates the detectors, controls the Decoder Chips and performs a first level data reduction. The paper describes the readout architecture of the H1 Silicon Detectors and performance data of the complete readout chain. (orig.)

Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Zamiri, M., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu; Klein, B.; Schuler-Sandy, T.; Dahiya, V.; Cavallo, F. [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); Myers, S. [SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States); Krishna, S., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States)

2016-02-29

We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al{sub 0.6}Ga{sub 0.4}Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface between the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.

EMC Diagnosis and Corrective Actions for Silicon Strip Tracker Detectors

Energy Technology Data Exchange (ETDEWEB)

Arteche, F.; /CERN /Imperial Coll., London; Rivetta, C.; /SLAC

2006-06-06

The tracker sub-system is one of the five sub-detectors of the Compact Muon Solenoid (CMS) experiment under construction at CERN for the Large Hadron Collider (LHC) accelerator. The tracker subdetector is designed to reconstruct tracks of charged sub-atomic particles generated after collisions. The tracker system processes analogue signals from 10 million channels distributed across 14000 silicon micro-strip detectors. It is designed to process signals of a few nA and digitize them at 40 MHz. The overall sub-detector is embedded in a high particle radiation environment and a magnetic field of 4 Tesla. The evaluation of the electromagnetic immunity of the system is very important to optimize the performance of the tracker sub-detector and the whole CMS experiment. This paper presents the EMC diagnosis of the CMS silicon tracker sub-detector. Immunity tests were performed using the final prototype of the Silicon Tracker End-Caps (TEC) system to estimate the sensitivity of the system to conducted noise, evaluate the weakest areas of the system and take corrective actions before the integration of the overall detector. This paper shows the results of one of those tests, that is the measurement and analysis of the immunity to CM external conducted noise perturbations.

NA62 Gigatracker sets new standards for silicon detectors

CERN Multimedia

CERN Bulletin

2011-01-01

The NA62 experiment should start collecting its first data (technical run) in a little over one year. At the heart of the experiment is the Gigatracker, a newly conceived silicon pixel detector, whose job is to measure the arrival time and the position of the incoming beam particles. The demonstration detector has recently shown a time resolution of 175 picoseconds, an unprecedented record in the field of silicon pixel detectors.   The Gigatracker prototype. A 115 metre long vacuum tank, a brand new set of detectors surrounding it and an extremely rare decay to study: this is the new NA62 detector, foreseen to be installed in the SPS North Area in 2012. “We will study a very rare decay of the K+. Such a decay is sensitive to contributions coming from new particles and therefore represents a powerful way of searching for new physics, complementary to the direct approach of the LHC detectors,” explains Augusto Ceccucci, NA62 spokesperson. The particles from the SPS accelerator a...

Radiation hardness of silicon detectors manufactured on wafers from various sources

International Nuclear Information System (INIS)

Dezillie, B.; Bates, S.; Glaser, M.; Lemeilleur, F.; Leroy, C.

1997-01-01

Impurity concentrations in the initial silicon material are expected to play an important role for the radiation hardness of silicon detectors, during their irradiation and for their evolution with time after irradiation. This work reports on the experimental results obtained with detectors manufactured using various float-zone (FZ) and epitaxial-grown material. Preliminary results comparing the changes in leakage current and full depletion voltage of FZ and epitaxial detectors as a function of fluence and of time after 10 14 cm -2 proton irradiation are given. The measurement of charge collection efficiency for epitaxial detectors is also presented. (orig.)

SVX II a silicon vertex detector for run II of the tevatron

International Nuclear Information System (INIS)

Bortoletto, D.

1994-11-01

A microstrip silicon detector SVX II has been proposed for the upgrade of the vertex detector of the CDF experiment to be installed for run II of the Tevatron in 1998. Three barrels of four layers of double sided detectors will cover the interaction region. The requirement of the silicon tracker and the specification of the sensors are discussed together with the proposed R ampersand D to verify the performance of the prototypes detectors produced by Sintef, Micron and Hamamatsu

Silicon detectors operating beyond the LHC collider conditions: scenarios for radiation fields and detector degradation

International Nuclear Information System (INIS)

Lazanu, I.; Lazanu, S.

2004-01-01

Particle physics makes its greatest advances with experiments at the highest energies. The way to advance to a higher energy regime is through hadron colliders, or through non-accelerator experiments, as for example the space astroparticle missions. In the near future, the Large Hadron Collider (LHC) will be operational, and beyond that, its upgrades: the Super-LHC (SLHC) and the hypothetical Very Large Hadron Collider (VLHC). At the present time, there are no detailed studies for future accelerators, except those referring to LHC. For the new hadron collider LHC and some of its updates in luminosity and energy, the silicon detectors could represent an important option, especially for the tracking system and calorimetry. The main goal of this paper is to analyse the expected long-time degradation of the silicon as material and for silicon detectors, during continuous radiation, in these hostile conditions. The behaviour of silicon in relation to various scenarios for upgrade in energy and luminosity is discussed in the frame of a phenomenological model developed previously by the authors and now extended to include new mechanisms, able to explain and give solutions to discrepancies between model predictions and detector behaviour after hadron irradiation. Different silicon material parameters resulting from different technologies are considered to evaluate what materials are harder to radiation and consequently could minimise the degradation of device parameters in conditions of continuous long time operation. (authors)

Pion-induced damage in silicon detectors

CERN Document Server

Bates, S; Glaser, M; Lemeilleur, F; León-Florián, E; Gössling, C; Kaiser, B; Rolf, A; Wunstorf, R; Feick, H; Fretwurst, E; Lindström, G; Moll, Michael; Taylor, G; Chilingarov, A G

1995-01-01

The damage induced by pions in silicon detectors is studied for positive and negative pions for fluence up to 10(14)cm-2 and 10(13) cm-2 respectively. Results on the energy dependence of the damage in the region of 65-330 MeV near to the  resonance are presented. The change in detector characteristics such as leakage current, charge collection efficiency and effective impurity concentration including long-term annealing effects have been studied. Comparisons to neutron and proton-induced damage are presented and discussed.

Thermal simulations of the new design for the BELLE silicon vertex detector

International Nuclear Information System (INIS)

Dragic, J.

2000-01-01

Full text: The experienced imperfections of the BELLE silicon vertex detector, SVD1 motioned the design of a new detector, SVD2, which targets on improving the main weaknesses encountered in the old design. In this report we focus on tile thermal aspects of the SVD2 ladder, whereby sufficient cooling of the detector is necessary in order to minimise the detector leakage currents. It is estimated that reducing the temperature of the silicon detector from 25 deg C to 15 deg C would result in a 50% reduction in leak current. Further, cooling the detector would help minimize mechanical stresses from the thermal cycling. Our task is to ensure that the heat generated by the readout chips is conducted down the SVD hybrid unit effectively, such that the chip and the hybrid temperature does not overbear the SVD silicon sensor temperature. We considered the performance of two materials to act as a heat spreading plate which is glued between the two hybrids in order to improve the heat conductivity of the hybrid unit, namely Copper and Thermal Pyrolytic Graphite (TPG). The effects of other ladder components were also considered in order to enhance the cooling of the silicon detectors. Finite element analysis with ANSYS software was used to simulate the thermal conditions of the SVD2 hybrid unit, in accordance with the baseline design for the mechanical structure of the ladder. It was found that Cu was a preferred material as it achieved equivalent silicon sensor cooling (3.6 deg C above cooling point), while its mechanical properties rendered it a lot more practical. Suppressing, the thermal path via a rib support block, by increasing its thermal resistivity, as well as increasing thermal conductivity of the ribs in the hybrid region, were deemed essential in the effective cooling of the silicon sensors

ATLAS Tracker Upgrade: Silicon Strip Detectors for the sLHC

CERN Document Server

Koehler, M

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown. A key issue ...

Dismantling the silicon microstrip detector on L3

CERN Multimedia

Laurent Guiraud

2001-01-01

The silicon microstrip detector is located at the heart of the detector and must be kept cool to prevent thermal noise. The work shown here is the removal of the cooling system. L3 was dismantled as part of the closure of the entire LEP accelerator in 2000 to make way for the new LHC.

Control and data acquisition electronics for the CDF Silicon Vertex Detector

Energy Technology Data Exchange (ETDEWEB)

Turner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

1991-11-01

A control and data acquisition system has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules. 11 refs., 6 figs., 3 tabs.

Control and data acquisition electronics for the CDF Silicon Vertex Detector

International Nuclear Information System (INIS)

Turner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

1991-11-01

A control and data acquisition system has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules. 11 refs., 6 figs., 3 tabs

Control and data acquisition electronics for the CDF silicon vertex detector

International Nuclear Information System (INIS)

urner, K.J.; Nelson, C.A.; Shaw, T.M.; Wesson, T.R.

1992-01-01

This paper reports on a control and data acquisition system that has been designed for the CDF Silicon Vertex Detector (SVX) at Fermilab. The system controls the operation of the SVX Rev D integrated circuit (SVX IC) that is used to instrument a 46,000 microstrip silicon detector. The system consists of a Fastbus Sequencer, a Crate Controller and Digitizer modules

Build-up of the silicon micro-strip detector array in ETF of HIRFL-CSR

International Nuclear Information System (INIS)

Wang Pengfei; Li Zhankui; Li Haixia

2014-01-01

Silicon micro-strip detectors have been widely used in the world-famous nuclear physics laboratories due to their better position resolution and energy resolution. Double-sided silicon micro-strip detectors with a position resolution of 0.5 mm × 0.5 mm, have been fabricated in the IMP (Institute of Modern Physics, CAS) by using microelectronics technology. These detectors have been used in the ETF (External Target Facility) of HIRFL-CSR, as ΔE detectors of the ΔE-E telescope system and the track detectors. With the help of flexibility printed circuit board (FPCB) and the integrated ASIC chips, a compact multi-channel front-end electronic board has been designed to fulfill the acquisition of the energy and position information of the Silicon micro-strip detectors. It is described in this paper that the build-up of the Silicon micro-strip detector array in ETF of HIRFL-CSR, the determination of the energy resolution of the detector units, and the energy resolution of approximately 1% obtained for 5∼9 MeV α particles in vacuum. (authors)

The Silicon Ministrip Detector of the DELPHI Very Forward Tracker

CERN Document Server

AUTHOR|(CDS)2067985

1996-01-01

The subject of this work is the design, test and construction of a new silicon tracking detector for the extreme forward region of the DELPHI experiment at LEP. I joined the Very Forward Tracker (VFT) Ministrip group in 1993, at a time when the upgrade of the DELPHI tracking system was proposed. My first task was to participate in the design of the ministrip detector for the VFT. This included the optimisation of the detector layout in simulations and the study of prototype detectors in the testbeam. In 1994 I became responsible for the tests and assembly' of the VFT ministrip detector at CERN. The main focus of my work was the study of the performance of a large variety of detectors in beam tests. This included the preparation of the test setup, the tests of different detectors and the analysis of the measurements. With these measurements it is possible to compare the advantages and disadvantages of various new layouts for large pitch silicon strip detectors. In particular the signal response and spatial res...

Cryogenic Silicon Microstrip Detector Modules for LHC

CERN Document Server

Perea-Solano, B

2004-01-01

CERN is presently constructing the LHC, which will produce collisions of 7 TeV protons in 4 interaction points at a design luminosity of 1034 cm-2 s-1. The radiation dose resulting from the operation at high luminosity will cause a serious deterioration of the silicon tracker performance. The state-of-art silicon microstrip detectors can tolerate a fluence of about 3 1014 cm-2 of hadrons or charged leptons. This is insufficient, however, for long-term operation in the central parts of the LHC trackers, in particular after the possible luminosity upgrade of the LHC. By operating the detectors at cryogenic temperatures the radiation hardness can be improved by a factor 10. This work proposes a cryogenic microstrip detector module concept which has the features required for the microstrip trackers of the upgraded LHC experiments at CERN. The module can hold an edgeless sensor, being a good candidate for improved luminosity and total cross-section measurements in the ATLAS, CMS and TOTEM experiments. The design o...

Construction and performance of silicon detectors for the small angle spectrometers of the collider detector of Fermilab

International Nuclear Information System (INIS)

Apollinari, G.; Bedeschi, F.; Bellettini, G.; Bosi, F.; Bosisio, L.; Cervelli, F.; Del Fabbro, R.; Dell'Orso, M.; Di Virgilio, A.; Focardi, E.; Giannetti, P.; Giorgi, M.; Menzione, A.; Ristori, L.; Scribano, A.; Sestini, P.; Stefanini, A.; Tonelli, G.; Zetti, F.; Bertolucci, S.; Cordelli, M.; Curatolo, M.; Dulach, B.; Esposito, B.; Giromini, P.; Miscetti, S.; Sansoni, A.

1987-01-01

The manufacturing process of a series of position sensitive silicon detectors is described together with the tests performed to optimize the performance of the detectors. The detectors are Schottky diodes with strips on the ohmic contact which allow to determine the position of the incoming ionizing particles by charge partition. Four detectors were assembled in a telescope and tested inside the vacuum pipe of the Tevatron Collider at Fermilab. The system is a prototype of the Small Angle Silicon Spectrometer, designed primarily to study p-anti p elastic and diffractive cross sections, and is a part of the Collider Detector of Fermilab (CDF). Several tests were performed to check the efficiency and the linearity of response of various regions of the detectors. Scans of the beam halo were also done in high and low β optics to check how close to the beam the detectors could be operated. Finally, the dependence of the detector response on temperature and integrated radiation dose was investigated. (orig.)

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

Science.gov (United States)

Yoo, H. I.; Iles, P. A.; Tanner, D. P.

1979-01-01

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

Influence for high intensity irradiation on characteristics of silicon strip-detectors

International Nuclear Information System (INIS)

Anokhin, I.E.; Pugatch, V.M.; Zinets, O.S.

1995-01-01

Full text: Silicon strip detectors (SSD) are widely used for the coordinate determination of short-range as well as minimum ionizing particles with high spatial resolution. Submicron position sensitivity of strip-detectors for short-range particles has been studied by means of two dimensional analyses of charges collected by neighboring strips as well as by measurement of charge collection times [1]. Silicon strip detectors was also used for testing high energy electron beam [2]. Under large fluences the radiation defects are stored and such characteristics of strip-detectors as an accuracy of the coordinate determination and the registration efficiency are significantly changed. Radiation defects lead to a decrease of the lifetime and mobility of charge carriers and therefore to changes of conditions for the charge collection in detectors. The inhomogeneity in spatial distribution if defects and electrical field plays an important role in the charge collection. In this report the role of the diffusion and drift in the charge collection in silicon strip-detectors under irradiation up to 10 Mrad has been studied. The electric field distribution and its dependence on the radiation dose in the detector have been calculated. It is shown that for particles incident between adjacent strips the coordinate determination precision depends strongly on the detector geometry and the electric field distribution, particularly in the vicinity of strips. Measuring simultaneously the collected charges and collection times on adjacent strips one can essentially improve reliability of the coordinate determination for short-range particles. Usually SSD are fabricated on n-type wafers. It is well known that under high intensity irradiation n-Si material converts into p-Si as far as p-type silicon is more radiative hard than n-type silicon [3] it is reasonable to fabricate SSD using high resistivity p-Si. Characteristics of SSD in basis n-and P-Si have been compared and higher

Silicon Strip Detectors for the ATLAS sLHC Upgrade

CERN Document Server

Miñano, M; The ATLAS collaboration

2011-01-01

While the Large Hadron Collider (LHC) at CERN is continuing to deliver an ever-increasing luminosity to the experiments, plans for an upgraded machine called Super-LHC (sLHC) are progressing. The upgrade is foreseen to increase the LHC design luminosity by a factor ten. The ATLAS experiment will need to build a new tracker for sLHC operation, which needs to be suited to the harsh sLHC conditions in terms of particle rates. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. To successfully face the increased radiation dose, a new generation of extremely radiation hard silicon detectors is being designed. The left part of figure 1 shows the simulated layout for the ATLAS tracker upgrade to be installed in the volume taken up by the current ATLAS pixel, strip and transition radiation detectors. Silicon sensors with sufficient radiation hardness are the subject of an international R&D programme, working on pixel and strip sensors. The...

Charged particle discrimination with silicon surface barrier detectors

International Nuclear Information System (INIS)

Coote, G.E.; Pithie, J.; Vickridge, I.C.

1996-01-01

The application for materials analysis of nuclear reactions that give rise to charged particles is a powerful surface analytical and concentration depth profiling technique. Spectra of charged particles, with energies in the range 0.1 to 15 MeV, emitted from materials irradiated with beams of light nuclei such as deuterons are measured with silicon surface barrier detectors. The spectra from multi-elemental materials typically encountered in materials research are usually composed of an overlapping superposition of proton, alpha, and other charged particle spectra. Interpretation of such complex spectra would be simplified if a means were available to electronically discriminate between the detector response to the different kinds of charged particle. We have investigated two methods of discriminating between different types of charged particles. The fast charge pulses from a surface barrier detector have different shapes, depending on the spatial distribution of energy deposition of the incident particle. Fast digitisation of the pulses, followed by digital signal processing provides one avenue for discrimination. A second approach is to use a thin transmission detector in front of a thick detector as a detector telescope. For a given incident energy, different types of charged particles will lose different amounts of energy in the thin detector, providing an alternative means of discrimination. We show that both approaches can provide significant simplification in the interpretation of charged particle spectra in practical situations, and suggest that silicon surface barrier detectors having graded electronic properties could provide improved discrimination compared to the current generation of detectors having homogeneous electronic properties. (author).12 refs., 2 tabs., 28 figs

Method for the preparation of n-i-p type radiation detector from silicon

International Nuclear Information System (INIS)

Keleti, J.; Toeroek, T.; Lukacs, J.; Molnar, I.

1978-01-01

The patent describes a procedure for the preparation of n-i-p type silicon radiation detectors. The aim was to provide an adaquate procedure for the production of α, β, γ-detectors from silicon available on the market, either p-type single crystal silicon characterised by its boron level. The procedure and the 9 claims are illustrated by two examples. (Sz.J.)

Silicon Strip Detectors for ATLAS at the HL-LHC Upgrade

CERN Document Server

Hara, K; The ATLAS collaboration

2012-01-01

present ATLAS silicon strip tracker (SCT) and transition radiation tracker(TRT) are to be replaced with new silicon strip detectors as part of the Inner Tracker System (ITK) for the Phase-II upgrade of the Large Hadron Collider, HL-LHC. We have carried out intensive R&D programs based on n+-on-p microstrip detectors to fabricate improved radiation hard strip detectors that can survive the radiation levels corresponding to the integrated luminosity of up to 3000 fb−1. We describe the main specifications for this year’s sensor fabrication and the related R&D results, followed by a description of the candidate schema for module integration.

Ultraviolet /UV/ sensitive phosphors for silicon imaging detectors

Science.gov (United States)

Viehmann, W.; Cowens, M. W.; Butner, C. L.

1981-01-01

The fluorescence properties of UV sensitive organic phosphors and the radiometric properties of phosphor coated silicon detectors in the VUV, UV, and visible wavelengths are described. With evaporated films of coronene and liumogen, effective quantum efficiencies of up to 20% have been achieved on silicon photodiodes in the vacuum UV. With thin films of methylmethacrylate (acrylic), which are doped with organic laser dyes and deposited from solution, detector quantum efficiencies of the order of 15% for wavelengths of 120-165 nm and of 40% for wavelengths above 190 nm have been obtained. The phosphor coatings also act as antireflection coatings and thereby enhance the response of coated devices throughout the visible and near IR.

Design optimization of a breast imaging system based on silicon microstrip detectors

International Nuclear Information System (INIS)

Stres, S.; Mikuz, M.

2000-01-01

A mammographic imaging set-up using silicon microstrip detectors in edge-on geometry was simulated using the GEANT package. Deposited energy in tissue of various thicknesses was evaluated and shown to agree to within 10% with reference calculations. Optimal energies as well as spectra for mammography with silicon detectors were determined by maximizing the figure of merit of a realistic imaging set-up. The scattered to primary radiation ratio was studied for various detector geometries. It was found that fan-shaped detectors are needed to maintain the image quality for divergent photon beams. (author)

Four-channel readout ASIC for silicon pad detectors

International Nuclear Information System (INIS)

Baturitsky, M.A.; Zamiatin, N.I.

2000-01-01

A custom front-end readout ASIC has been designed for silicon calorimeters supposed to be used in high-energy physics experiments. The ASIC was produced using BJT-JFET technology. It contains four channels of a fast low-noise charge-sensitive preamplifier (CSP) with inverting outputs summed by a linear adder (LA) followed by an RC-CR shaping amplifier (SA) with 30 ns peaking time. Availability of separate outputs of the CSPs and the LA makes it possible to join any number of silicon detector layers to obtain the longitudinal and transversal resolution required using only this ASIC in any silicon calorimeter minitower configuration. Noise performance is ENC=1800e - +18e - /pF at 30 ns peaking time for detector capacitance up to C d =400 pF. Rise time is 8 ns at input capacitance C d =100 pF. Power dissipation is less than 50 mW/ chip at voltage supply 5 V

A prototype silicon detector system for space cosmic-ray charge measurement

Science.gov (United States)

Zhang, Fei; Fan, Rui-Rui; Peng, Wen-Xi; Dong, Yi-Fa; Gong, Ke; Liang, Xiao-Hua; Liu, Ya-Qing; Wang, Huan-Yu

2014-06-01

A readout electronics system used for space cosmic-ray charge measurement for multi-channel silicon detectors is introduced in this paper, including performance measurements. A 64-channel charge sensitive ASIC (VA140) from the IDEAS company is used. With its features of low power consumption, low noise, large dynamic range, and high integration, it can be used in future particle detecting experiments based on silicon detectors.

ATLAS Tracker Upgrade: Silicon Strip Detectors and Modules for the SLHC

CERN Document Server

Minano, M

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown.

Atlas Tracker Upgrade: Silicon Strip Detectors and Modules for the SLHC

CERN Document Server

Minano, M

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a significant factor, with the upgraded machine dubbed Super-LHC. The ATLAS experiment will require a new tracker for Super-LHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will imply a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R&D programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown.

New developments in double sided silicon strip detectors

International Nuclear Information System (INIS)

Becker, H.; Boulos, T.; Cattaneo, P.; Dietl, H.; Hauff, D.; Holl, P.; Lange, E.; Lutz, G.; Moser, H.G.; Schwarz, A.S.; Settles, R.; Struder, L.; Kemmer, J.; Buttler, W.

1990-01-01

A new type of double sided silicon strip detector has been built and tested using highly density VLSI readout electronics connected to both sides. Capacitive coupling of the strips to the readout electronics has been achieved by integrating the capacitors into the detector design, which was made possible by introducing a new detector biasing concept. Schemes to simplify the technology of the fabrication of the detectors are discussed. The static performance properties of the devices as well as implications of the use of VLSI electronics in their readout are described. Prototype detectors of the described design equipped with high density readout electronics have been installed in the ALEPH detector at LEP. Test results on the performance are given

Field oxide radiation damage measurements in silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland); Singh, P; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

1993-04-01

Surface radiation damage in planar processed silicon detectors is caused by radiation generated holes being trapped in the silicon dioxide layers on the detector wafer. We have studied charge trapping in thick (field) oxide layers on detector wafers by irradiating FOXFET biased strip detectors and MOS test capacitors. Special emphasis was put on studying how a negative bias voltage across the oxide during irradiation affects hole trapping. In addition to FOXFET biased detectors, negatively biased field oxide layers may exist on the n-side of double-sided strip detectors with field plate based n-strip separation. The results indicate that charge trapping occurred both close to the Si-SiO[sub 2] interface and in the bulk of the oxide. The charge trapped in the bulk was found to modify the electric field in the oxide in a way that leads to saturation in the amount of charge trapped in the bulk when the flatband/threshold voltage shift equals the voltage applied over the oxide during irradiation. After irradiation only charge trapped close to the interface is annealed by electrons tunneling to the oxide from the n-type bulk. (orig.).

Neutron damage of silicon detectors at 20 deg C

International Nuclear Information System (INIS)

Bardos, R.; Gorfine, G.; Guy, L.; Moorhead, G.; Taylor, G.; Tovey, S.

1992-01-01

This contribution reports new data on the damage of silicon detectors by low energy (1 MeV) neutrons. The data were taken at the end of 1991. Three exposures of UA2 Inner Silicon detectors were made: at +20 deg C, -15 deg C and -95 deg C. A high neutron flux enabled the required fluences to be achieved in relatively short times. This increases the sensitivity of the experiment to damage types with shorter self-annealing time constants. This note discusses the new data taken at +20 deg C. Analysis of the low temperature exposures is in progress. 5 refs., 15 figs

Effects of growth conditions on thermal profiles during Czochralski silicon crystal growth

Science.gov (United States)

Choe, Kwang Su; Stefani, Jerry A.; Dettling, Theodore B.; Tien, John K.; Wallace, John P.

1991-01-01

An eddy current testing method was used to continuously monitor crystal growth process and investigate the effects of growth conditions on thermal profiles during Czochralski silicon crystal growth. The experimental concept was to monitor the intrinsic electrical conductivities of the growing crystal and deduce temperature values from them. In terms of the experiments, the effects of changes in growth parameters, which include the crystal and crucible rotation rates, crucible position, and pull rate, and hot-zone geometries were investigated. The results show that the crystal thermal profile could shift significantly as a function of crystal length if the closed-loop control fails to maintain a constant thermal condition. As a direct evidence to the effects of the melt flow on heat transfer processes, a thermal gradient minimum was observed when the crystal/crucible rotation combination was 20/-10 rpm cw. The thermal gradients in the crystal near the growth interface were reduced most by decreasing the pull rate or by reducing the radiant heat loss to the environment; a nearly constant axial thermal gradient was achieved when either the pull rate was decreased by half, the height of the exposed crucible wall was doubled, or a radiation shield was placed around the crystal. Under these conditions, the average axial thermal gradient along the surface of the crystal was about 4-5°C/mm. When compared to theoretical results found in literature, the axial profiles correlated well with the results of the models which included radiant interactions. However, the radial gradients estimated from three-frequency data were much higher than what were predicted by known theoretical models. This discrepancy seems to indicate that optical phenomenon within the crystal is significant and should be included in theoretical modeling.

Sub-nanosecond time-of-flight for segmented silicon detectors

International Nuclear Information System (INIS)

Souza, R.T. de; Alexander, A.; Brown, K.; Floyd, B.; Gosser, Z.Q.; Hudan, S.; Poehlman, J.; Rudolph, M.J.

2011-01-01

Development of a multichannel time-of-flight system for readout of a segmented, ion-passivated, ion-implanted silicon detector is described. This system provides sub-nanosecond resolution (δt∼370ps) even for low energy α particles which deposit E≤7.687MeV in the detector.

On determining dead layer and detector thicknesses for a position-sensitive silicon detector

Science.gov (United States)

Manfredi, J.; Lee, Jenny; Lynch, W. G.; Niu, C. Y.; Tsang, M. B.; Anderson, C.; Barney, J.; Brown, K. W.; Chajecki, Z.; Chan, K. P.; Chen, G.; Estee, J.; Li, Z.; Pruitt, C.; Rogers, A. M.; Sanetullaev, A.; Setiawan, H.; Showalter, R.; Tsang, C. Y.; Winkelbauer, J. R.; Xiao, Z.; Xu, Z.

2018-04-01

In this work, two particular properties of the position-sensitive, thick silicon detectors (known as the "E" detectors) in the High Resolution Array (HiRA) are investigated: the thickness of the dead layer on the front of the detector, and the overall thickness of the detector itself. The dead layer thickness for each E detector in HiRA is extracted using a measurement of alpha particles emitted from a 212Pb pin source placed close to the detector surface. This procedure also allows for energy calibrations of the E detectors, which are otherwise inaccessible for alpha source calibration as each one is sandwiched between two other detectors. The E detector thickness is obtained from a combination of elastically scattered protons and an energy-loss calculation method. Results from these analyses agree with values provided by the manufacturer.

A radiation detector fabricated from silicon photodiode.

Science.gov (United States)

Yamamoto, H; Hatakeyama, S; Norimura, T; Tsuchiya, T

1984-12-01

A silicon photodiode is converted to a low energy charged particle radiation detector. The window thickness of the fabricated detector is evaluated to be 50 micrograms/cm2. The area of the depletion region is 13.2 mm2 and the depth of it is estimated to be about 100 microns. The energy resolution (FWHM) is 14.5 ke V for alpha-particles from 241Am and 2.5 ke V for conversion electrons from 109Cd, respectively.

Antihydrogen annihilation reconstruction with the ALPHA silicon detector

Energy Technology Data Exchange (ETDEWEB)

Andresen, G.B. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Ashkezari, M.D. [Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6 (Canada); Bertsche, W. [Department of Physics, Swansea University, Swansea SA2 8PP (United Kingdom); Bowe, P.D. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Butler, E. [European Laboratory for Particle Physics, CERN, CH-1211 Geneva 23 (Switzerland); Cesar, C.L. [Instituto de Fisica, Universidade Federal do Rio de Janeiro, Rio de Janeiro 21941-972 (Brazil); Chapman, S. [Department of Physics, University of California, Berkeley, CA 94720-7300 (United States); Charlton, M.; Deller, A.; Eriksson, S. [Department of Physics, Swansea University, Swansea SA2 8PP (United Kingdom); Fajans, J. [Department of Physics, University of California, Berkeley, CA 94720-7300 (United States); Friesen, T. [Department of Physics and Astronomy, University of Calgary, Calgary, AB, Canada T2N 1N4 (Canada); Fujiwara, M.C. [TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, Canada V6T 2A3 (Canada); Department of Physics and Astronomy, University of Calgary, Calgary, AB, Canada T2N 1N4 (Canada); Gill, D.R. [TRIUMF, 4004 Wesbrook Mall, Vancouver, BC, Canada V6T 2A3 (Canada); Gutierrez, A. [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, Canada V6T 1Z4 (Canada); Hangst, J.S. [Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark); Hardy, W.N. [Department of Physics and Astronomy, University of British Columbia, Vancouver, BC, Canada V6T 1Z4 (Canada); Hayden, M.E. [Department of Physics, Simon Fraser University, Burnaby, BC, Canada V5A 1S6 (Canada); Hayano, R.S. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Humphries, A.J. [Department of Physics, Swansea University, Swansea SA2 8PP (United Kingdom); and others

2012-08-21

The ALPHA experiment has succeeded in trapping antihydrogen, a major milestone on the road to spectroscopic comparisons of antihydrogen with hydrogen. An annihilation vertex detector, which determines the time and position of antiproton annihilations, has been central to this achievement. This detector, an array of double-sided silicon microstrip detector modules arranged in three concentric cylindrical tiers, is sensitive to the passage of charged particles resulting from antiproton annihilation. This article describes the method used to reconstruct the annihilation location and to distinguish the annihilation signal from the cosmic ray background. Recent experimental results using this detector are outlined.

Antihydrogen annihilation reconstruction with the ALPHA silicon detector

CERN Document Server

Andresen, G B; Bertsche, W; Bowe, P D; Butler, E; Cesar, C L; Chapman, S; Charlton, M; Deller, A; Eriksson, S; Fajans, J; Friesen, T; Fujiwara, M C; Gill, D.R; Gutierrez, A; Hangst, J S; Hardy, W N; Hayden, M E; Hayano, R S; Humphries, A J; Hydomako, R; Jonsell, S; Jorgensen, L V; Kurchaninov, L; Madsen, N; Menary, S; Nolan, P; Olchanski, K; Olin, A; Povilus, A; Pusa, P; Sarid, E; Seif el Nasr, S; Silveira, D M; So, C; Storey, J W; Thompson, R I; van der Werf, D P; Yamazaki, Y

2012-01-01

The ALPHA experiment has succeeded in trapping antihydrogen, a major milestone on the road to spectroscopic comparisons of antihydrogen with hydrogen. An annihilation vertex detector, which determines the time and position of antiproton annihilations, has been central to this achievement. This detector, an array of double-sided silicon microstrip detector modules arranged in three concentric cylindrical tiers, is sensitive to the passage of charged particles resulting from antiproton annihilation. This article describes the method used to reconstruct the annihilation location and to distinguish the annihilation signal from the cosmic ray background. Recent experimental results using this detector are outlined.

Position calibration of silicon strip detector using quasi-elastic scattering of 16O+197Au

International Nuclear Information System (INIS)

Yan Wenqi; Hu Hailong; Zhang Gaolong

2013-01-01

Background: Elastic scattering is induced by weakly unstable nuclei. Generally, a good angular resolution for angular distribution of elastic scattering is needed. The silicon strip detector is often used for this kind of experiment. Purpose: In order to use silicon strip detector to study the elastic scattering of weakly unbound nuclei, it is important to get the information of its position calibration. It is well known that the elastic scattering of stable nuclei has a good angular distribution and many experimental data have been obtained. Methods: So the scattering of stable nuclei can be used to calibrate the position information of silicon strip detector. In this experiment, the positions of silicon strip detectors are calibrated using 101 MeV and 59 MeV 16 O scattering on the 197 Au target. Results: The quasi-elastic peaks can be observed in the silicon strip detectors and the counts of quasi-elastic 16 O can be obtained. The solid angles of the silicon strip detectors are calibrated by using alpha source which has three alpha energy values. The angular distribution of quasi-elastic scattering of 16 O+ 197 Au is obtained at these two energy values. Conclusions: The experimental data of angular distribution are reasonable and fit for the principle of angular distribution of elastic scattering. It is concluded that in the experiment these silicon strip detectors can accurately give the position information and can be used for the elastic scattering experiment. (authors)

The development of two ASIC's for a fast silicon strip detector readout system

International Nuclear Information System (INIS)

Christain, D.; Haldeman, M.; Yarema, R.; Zimmerman, T.; Newcomer, F.M.; VanBerg, R.

1989-01-01

A high speed, low noise readout system for silicon strip detectors is being developed for Fermilab E771, which will begin taking data in 1989. E771 is a fixed target experiment designed to study the production of B hadrons by an 800 GeV/c proton beam. The experimental apparatus consists of an open geometry magnetic spectrometer featuring good muon and electron identification and a 16000 channel silicon microstrip vertex detector. This paper reviews the design and prototyping of two application specific integrated circuits (ASIC's) an amplifier and a discriminator, which are being produced for the silicon strip detector readout system

Investigation of innovative silicon detector assembling solutions for hadron calorimeter modules

International Nuclear Information System (INIS)

Cai, G.; Ammannati, N.

1995-01-01

The application of large areas of silicon detector mosaics in calorimetry for high energy particles measurement in Physics has grown in the last few years and is still in progress. The high number of mosaic units in the calorimeter implies the following main requirements to be satisfied: a simple low cost for manufacturing and assembling, easy mountable/dismountable units, possibility to move or change silicon detectors easily, reliability of the electrical contacts between the aluminium layer on the silicon detector surface and the PCB breaker points.In order to satisfy the above requirements several assembling solutions have been investigated and tested recently, as fixed contact by using conducting epoxy-glues, mechanically dismountable contacts of gold-plated PCB copper to the silicon detectors, and others.The results of the tests show a general degradation of the original electrical characteristics of the contacts after of varying lengths operating times.This fact, due to corrosion phenomena assisted by chemical residuals in the contact interface, causes an irreversible damage of the detectors in the long term.In addition we found a room temperature interdiffusion of gold and copper.A promising solution to these problems can be achieved by careful removal of chemical, increase of golden layer of the PCB electrical copper contacts or aluminising them by pure aluminium vapour deposition in vacuum chamber.Thee estimated degradation time between the PCB copper and the aluminium film is very low in this case, and the risk of diffusion in the detector aluminium film surface is low along the whole operating life of the calorimeter. (orig.)

Fabrication and characterization of surface barrier detector from commercial silicon substrate

International Nuclear Information System (INIS)

Silva, Julio Batista Rodrigues

2016-01-01

In this work it was developed radiation detectors silicon surface barrier that were capable of detecting the presence of gamma radiation from a low energy of iodine-125 seeds used in brachytherapy treatments. >From commercial silicon substrates detectors were developed, one sequence left of chemical treatments to the surfaces of these substrates with the intention of minimizing the possible noise generated, validation of the samples obtained as diodes, ensuring detector characteristics and effective use as detector for Iodine-125 radioactive sources with energy of about 25 keV and Americium-251 with energy on the order of 59 keV. Finished performing the analysis of the obtained energy spectra and so it was possible to observe the ability of these detectors to measure the energy from these seeds. (author)

Study of oxide facing at silicone detectors of ionization detectors

International Nuclear Information System (INIS)

Kopestansky, J.; Tykva, R.

1999-01-01

Formation of oxide facing on silicone in discrete phases of technological preparation of detectors and interaction of gold (aluminium) steamed with SiO x layer were studied. The homogeneity of Au and Si) x layers and interface Au-SiO x and SiO x -Si were examined. The methods SIMS, and partially XPS, AES and RBS were used

Development of silicon detectors for Beam Loss Monitoring at HL-LHC

Science.gov (United States)

Verbitskaya, E.; Eremin, V.; Zabrodskii, A.; Bogdanov, A.; Shepelev, A.; Dehning, B.; Bartosik, M. R.; Alexopoulos, A.; Glaser, M.; Ravotti, F.; Sapinski, M.; Härkönen, J.; Egorov, N.; Galkin, A.

2017-03-01

Silicon detectors were proposed as novel Beam Loss Monitors (BLM) for the control of the radiation environment in the vicinity of the superconductive magnets of the High-Luminosity Large Hadron Collider. The present work is aimed at enhancing the BLM sensitivity and therefore the capability of triggering the beam abort system before a critical radiation load hits the superconductive coils. We report here the results of three in situ irradiation tests of Si detectors carried out at the CERN PS at 1.9-4.2 K. The main experimental result is that all silicon detectors survived irradiation up to 1.22× 1016 p/cm2. The third test, focused on the detailed characterization of the detectors with standard (300 μm) and reduced (100 μm) thicknesses, showed only a marginal difference in the sensitivity of thinned detectors in the entire fluence range and a smaller rate of signal degradation that promotes their use as BLMs. The irradiation campaigns produced new information on radiation damage and carrier transport in Si detectors irradiated at the temperatures of 1.9-4.2 K. The results were encouraging and permitted to initiate the production of the first BLM prototype modules which were installed at the end of the vessel containing the superconductive coil of a LHC magnet immersed in superfluid helium to be able to test the silicon detectors in real operational conditions.

Characterization of X3 Silicon Detectors for the ELISSA Array at ELI-NP

Science.gov (United States)

Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Cognata, M. La; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; Spitaleri, C.; State, A.; Xu, Y.

2018-01-01

Position-sensitive silicon strip detectors represent one of the best solutions for the detection of charged particles as they provide good energy and position resolution over a large range of energies. A silicon array coupled with the gamma beams at the ELI-NP facility would allow measuring photodissociation reactions of interest for Big Bang Nucleosynthesis and on heavy nuclei intervening in the p-process. Forty X3 detectors for our ELISSA (ELI-NP Silicon Strip Detectors Array) project have been recently purchased and tested. We investigated several specifications, such as leakage currents, depletion voltage, and detector stability under vacuum. The energy and position resolution, and ballistic deficit were measured and analyzed. This paper presents the main results of our extensive testing. The measured energy resolution for the X3 detectors is better than results published for similar arrays (ANASEN or ORRUBA).

Nuclear-Recoil Energy Scale in CDMS II Silicon Dark-Matter Detectors

Energy Technology Data Exchange (ETDEWEB)

Agnese, R.; et al.

2018-03-07

The Cryogenic Dark Matter Search (CDMS II) experiment aims to detect dark matter particles that elastically scatter from nuclei in semiconductor detectors. The resulting nuclear-recoil energy depositions are detected by ionization and phonon sensors. Neutrons produce a similar spectrum of low-energy nuclear recoils in such detectors, while most other backgrounds produce electron recoils. The absolute energy scale for nuclear recoils is necessary to interpret results correctly. The energy scale can be determined in CDMS II silicon detectors using neutrons incident from a broad-spectrum $^{252}$Cf source, taking advantage of a prominent resonance in the neutron elastic scattering cross section of silicon at a recoil (neutron) energy near 20 (182) keV. Results indicate that the phonon collection efficiency for nuclear recoils is $4.8^{+0.7}_{-0.9}$% lower than for electron recoils of the same energy. Comparisons of the ionization signals for nuclear recoils to those measured previously by other groups at higher electric fields indicate that the ionization collection efficiency for CDMS II silicon detectors operated at $\\sim$4 V/cm is consistent with 100% for nuclear recoils below 20 keV and gradually decreases for larger energies to $\\sim$75% at 100 keV. The impact of these measurements on previously published CDMS II silicon results is small.

α-spectra hyperfine structure resolution by silicon planar detectors

International Nuclear Information System (INIS)

Eremin, V.K.; Verbitskaya, E.M.; Strokan, N.B.; Sukhanov, V.L.; Malyarenko, A.M.

1986-01-01

The lines with 13 keV step from the main one is α-spectra of nuclei with an odd number of nucleons take place. Silicon planar detectors n-Si with the operation surface of 10 mm 2 are developed for resolution of this hyperfine structure. The mechanism of losses in detectors for short-range-path particles is analyzed. The results of measurements from detectors with 10 keV resolution are presented

New results on silicon microstrip detectors of CMS tracker

International Nuclear Information System (INIS)

Demaria, N.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bolla, G.; Bosi, F.; Borrello, L.; Bortoletto, D.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; De Palma, M.; Dell'Orso, R.; Marina, R. Della; Dutta, S.; Eklund, C.; Elliott-Peisert, A.; Favro, G.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammerstrom, R.; Hebbeker, T.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Skog, K.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Li Yahong; Watts, S.; Wittmer, B.

2000-01-01

Interstrip and backplane capacitances on silicon microstrip detectors with p + strip on n substrate of 320 μm thickness were measured for pitches between 60 and 240 μm and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4x10 14 protons/cm 2 of 24 GeV/c momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence found to enhance the stability

An algorithm for calculating the Lorentz angle in silicon detectors [online

OpenAIRE

Bartsch, Valeria; De Boer, Willem; Bol, Johannes; Dierlamm, Alexander; Grigoriev, Eugene; Hauler, Florian; Heising, Stephan; Jungermann, Levin

2001-01-01

The CMS (Compact Muon Solenoid) detector will use silicon sensors in the harsh radiation environment of the LHC (Large Hadron Collider) and high magnetic fields. The drift direction of the charge carriers is aected by the Lorentz force due to the high magnetic field. Also the resulting radiation damage changes the properties of the drift. The CMS silicon strip detector is read out on the p-side of the sensors, where holes are coll...

High resolution silicon detectors for colliding beam physics

International Nuclear Information System (INIS)

Amendolia, S.R.; Bedeschi, F.; Bertolucci, E.; Bettoni, D.; Bosisio, L.; Bottigli, U.; Bradaschia, C.; Dell'Orso, M.; Fidecaro, F.; Foa, L.; Focardi, E.; Giannetti, P.; Giorgi, M.A.; Marrocchesi, P.S.; Menzione, A.; Raso, G.; Ristori, L.; Scribano, A.; Stefanini, A.; Tenchini, R.; Tonelli, G.; Triggiani, G.

1984-01-01

Resolution and linearity of the position measurement of Pisa multi-electrode silicon detectors are presented. The detectors are operated in slightly underdepleted mode and take advantage of their intrinsic resistivity for resistive charge partition between adjacent strips. 22 μm resolution is achieved with readout lines spaced 300 μm. Possible applications in colliding beam experiments for the detection of secondary vertices are discussed. (orig.)

Characterization procedures for double-sided silicon microstrip detectors

Energy Technology Data Exchange (ETDEWEB)

Bruner, N.L. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Frautschi, M.A. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Hoeferkamp, M.R. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.; Seidel, S.C. [New Mexico Univ., Albuquerque, NM (United States). New Mexico Center for Particle Phys.

1995-08-15

Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage. (orig.).

Characterization procedures for double-sided silicon microstrip detectors

International Nuclear Information System (INIS)

Bruner, N.L.; Frautschi, M.A.; Hoeferkamp, M.R.; Seidel, S.C.

1995-01-01

Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described: - Leakage current, - Depletion voltage, - Bias resistance, - Interstrip resistance, - Coupling capacitance, - Coupling capacitor breakdown voltage. (orig.)

Influence of radiation induced defect clusters on silicon particle detectors

International Nuclear Information System (INIS)

Junkes, Alexandra

2011-10-01

The Large Hadron Collider (LHC) at the European Organization for Nuclear Research (CERN) addresses some of today's most fundamental questions of particle physics, like the existence of the Higgs boson and supersymmetry. Two large general-purpose experiments (ATLAS, CMS) are installed to detect the products of high energy protonproton and nucleon-nucleon collisions. Silicon detectors are largely employed in the innermost region, the tracking area of the experiments. The proven technology and large scale availability make them the favorite choice. Within the framework of the LHC upgrade to the high-luminosity LHC, the luminosity will be increased to L=10 35 cm -2 s -1 . In particular the pixel sensors in the innermost layers of the silicon trackers will be exposed to an extremely intense radiation field of mainly hadronic particles with fluences of up to Φ eq =10 16 cm -2 . The radiation induced bulk damage in silicon sensors will lead to a severe degradation of the performance during their operational time. This work focusses on the improvement of the radiation tolerance of silicon materials (Float Zone, Magnetic Czochralski, epitaxial silicon) based on the evaluation of radiation induced defects in the silicon lattice using the Deep Level Transient Spectroscopy and the Thermally Stimulated Current methods. It reveals the outstanding role of extended defects (clusters) on the degradation of sensor properties after hadron irradiation in contrast to previous works that treated effects as caused by point defects. It has been found that two cluster related defects are responsible for the main generation of leakage current, the E5 defects with a level in the band gap at E C -0.460 eV and E205a at E C -0.395 eV where E C is the energy of the edge of the conduction band. The E5 defect can be assigned to the tri-vacancy (V 3 ) defect. Furthermore, isochronal annealing experiments have shown that the V 3 defect exhibits a bistability, as does the leakage current. In oxygen

Influence of radiation induced defect clusters on silicon particle detectors

Energy Technology Data Exchange (ETDEWEB)

Junkes, Alexandra

2011-10-15

The Large Hadron Collider (LHC) at the European Organization for Nuclear Research (CERN) addresses some of today's most fundamental questions of particle physics, like the existence of the Higgs boson and supersymmetry. Two large general-purpose experiments (ATLAS, CMS) are installed to detect the products of high energy protonproton and nucleon-nucleon collisions. Silicon detectors are largely employed in the innermost region, the tracking area of the experiments. The proven technology and large scale availability make them the favorite choice. Within the framework of the LHC upgrade to the high-luminosity LHC, the luminosity will be increased to L=10{sup 35} cm{sup -2}s{sup -1}. In particular the pixel sensors in the innermost layers of the silicon trackers will be exposed to an extremely intense radiation field of mainly hadronic particles with fluences of up to {phi}{sub eq}=10{sup 16} cm{sup -2}. The radiation induced bulk damage in silicon sensors will lead to a severe degradation of the performance during their operational time. This work focusses on the improvement of the radiation tolerance of silicon materials (Float Zone, Magnetic Czochralski, epitaxial silicon) based on the evaluation of radiation induced defects in the silicon lattice using the Deep Level Transient Spectroscopy and the Thermally Stimulated Current methods. It reveals the outstanding role of extended defects (clusters) on the degradation of sensor properties after hadron irradiation in contrast to previous works that treated effects as caused by point defects. It has been found that two cluster related defects are responsible for the main generation of leakage current, the E5 defects with a level in the band gap at E{sub C}-0.460 eV and E205a at E{sub C}-0.395 eV where E{sub C} is the energy of the edge of the conduction band. The E5 defect can be assigned to the tri-vacancy (V{sub 3}) defect. Furthermore, isochronal annealing experiments have shown that the V{sub 3} defect

Application of hydrogen-plasma technology for property modification of silicon and producing the silicon-based structures

International Nuclear Information System (INIS)

Fedotov, A.K.; Mazanik, A.V.; Ul'yashin, A.G.; Dzhob, R; Farner, V.R.

2000-01-01

Effects of atomic hydrogen on the properties of Czochralski-grown single crystal silicon as well as polycrystalline shaped silicon have been investigated. It was established that the buried defect layers created by high-energy hydrogen or helium ion implantation act as a good getter centers for hydrogen atoms introduced in silicon in the process of hydrogen plasma hydrogenation. Atomic hydrogen was shown to be active as a catalyzer significantly enhancing the rate of thermal donors formation in p-type single crystal silicon. This effect can be used for n-p- and p-n-p-silicon based device structures producing [ru

Particle identification by silicon detectors

International Nuclear Information System (INIS)

Santos, Denison de Souza

1997-01-01

A method is developed for the evaluation of the energy loss, dE/dx, of a charged particle traversing a silicon strip detector. The method is applied to the DELPHI microvertex detector leading to diagrams of dE/dx versus momentum for different particles. The specific case of pions and protons is treated and the most probable value of dE/dx and the width of the dE/dx distribution for those particles in the momentum range of 0.2 GeV/c to 1.5 GeV/c, are obtained. The resolution found is 13.4 % for particles with momentum higher than 2 GeV/c and the separation power is 2.9 for 1.0 GeV/c pions and protons. (author)

Amorphous Silicon Position Detectors for the Link Alignment System of the CMS Detector: Users Handbook

International Nuclear Information System (INIS)

Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F. J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

2007-01-01

We present the general characteristics, calibration procedures and measured performance of the Amorphous Silicon Position Detectors installed in the Link Alignment System of the CMS Detector for laser beam detection and reconstruction and give the Data Base to be used as a Handbook during CMS operation. (Author) 10 refs

Amorphous Silicon Position Detectors for the Link Alignment System of the CMS Detector: Users Handbook

Energy Technology Data Exchange (ETDEWEB)

Calderon, A.; Gomez, G.; Gonzalez-Sanchez, F. J.; Martinez-Rivero, C.; Matorras, F.; Rodrigo, T.; Ruiz-Arbol, P.; Scodellaro, L.; Vila, I.; Virto, A. L.; Alberdi, J.; Arce, P.; Barcala, J.M.; Calvo, E.; Ferrando, A.; Josa, M. I.; Molinero, A.; Navarrete, J.; Oller, J. C.; Yuste, C.

2007-07-01

We present the general characteristics, calibration procedures and measured performance of the Amorphous Silicon Position Detectors installed in the Link Alignment System of the CMS Detector for laser beam detection and reconstruction and give the Data Base to be used as a Handbook during CMS operation. (Author) 10 refs.

Beam test performance and simulation of prototypes for the ALICE silicon pixel detector

International Nuclear Information System (INIS)

Conrad, J.; Anelli, G.; Antinori, F.

2007-01-01

The silicon pixel detector (SPD) of the ALICE experiment in preparation at the Large Hadron Collider (LHC) at CERN is designed to provide the precise vertex reconstruction needed for measuring heavy flavor production in heavy ion collisions at very high energies and high multiplicity. The SPD forms the innermost part of the Inner Tracking System (ITS) which also includes silicon drift and silicon strip detectors. Single assembly prototypes of the ALICE SPD have been tested at the CERN SPS using high energy proton/pion beams in 2002 and 2003. We report on the experimental determination of the spatial precision. We also report on the first combined beam test with prototypes of the other ITS silicon detector technologies at the CERN SPS in November 2004. The issue of SPD simulation is briefly discussed

Technology for the compatible integration of silicon detectors with readout electronics

International Nuclear Information System (INIS)

Zimmer, G.

1984-01-01

Compatible integration of detectors and readout electronics on the same silicon substrate is of growing interest. As the methods of microelectronics technology have already been adapted for detector fabrication, a common technology basis for detectors and readout electronics is available. CMOS technology exhibits most attractive features for the compatible realization of readout electronics when advanced LSI processing steps are combined with detector requirements. The essential requirements for compatible integration are the availability of high resistivity (100)-oriented single crystalline silicon substrate, the formation of suitably doped areas for MOS circuits and the isolation of the low voltage circuit from the detector operated at much higher supply voltage. Junction isolation as a first approach based on present production technology and dielectric isolation based on an advanced SOI-LSI technology are discussed as the most promising solutions for present and future applications, respectively. (orig.)

High-resolution ion-implanted silicon detectors

International Nuclear Information System (INIS)

von Borany, J.; Schmidt, B.

1985-01-01

An account is given of the properties of silicon detectors developed at the Central Institute of Nuclear Research of the Academy of Sciences of the German Democratic Republic (Rossendorf) and made by a special planar technology using ion implantation, anodic oxidation, thermal oxidation in an oxygen atmosphere containing HCl, and annealing by pulses of 10--20 msec duration. The resolution for α particles of 5.5 MeV energy was 11.2 keV (active area A 2 ). The detectors were characterized by a low intrinsic noise (< or =5 keV), so that they could be used for spectrometry of low-energy electrons (E/sub e/< or =250 keV). In a certain range of energies (E/sub x/ = 15--60 keV) it was possible to use these detectors for spectrometry of x rays at room temperature. Examples and results of applications of detectors in radiation chemistry (investigations of backscattering of particles and nuclear reaction spectroscopy) are given. The feasibility of annealing of radiation defects in such detectors after irradiation with a large dose of charged particles is considered

Detector and Front-end electronics for ALICE and STAR silicon strip layers

CERN Document Server

Arnold, L; Coffin, J P; Guillaume, G; Higueret, S; Jundt, F; Kühn, C E; Lutz, Jean Robert; Suire, C; Tarchini, A; Berst, D; Blondé, J P; Clauss, G; Colledani, C; Deptuch, G; Dulinski, W; Hu, Y; Hébrard, L; Kucewicz, W; Boucham, A; Bouvier, S; Ravel, O; Retière, F

1998-01-01

Detector modules consisting of Silicon Strip Detector (SSD) and Front End Electronics (FEE) assembly have been designed in order to provide the two outer layers of the ALICE Inner Tracker System (ITS) [1] as well as the outer layer of the STAR Silicon Vertex Tracker (SVT) [2]. Several prototypes have beenproduced and tested in the SPS and PS beam at CERN to validate the final design. Double-sided, AC-coupled SSD detectors provided by two different manufacturers and also a pair of single-sided SSD have been asssociated to new low-power CMOS ALICE128C ASIC chips in a new detector module assembly. The same detectors have also been associated to current Viking electronics for reference purpose. These prototype detector modules are described and some first results are presented.

Developing a fast simulator for irradiated silicon detectors

CERN Document Server

Diez Gonzalez-Pardo, Alvaro

2015-01-01

Simulation software for irradiated silicon detectors has been developed on the basis of an already existing C++ simulation software called TRACS[1]. This software has been already proven useful in understanding non-irradiated silicon diodes and microstrips. In addition a wide variety of user-focus features has been implemented to improve on TRACS flexibility. Such features include an interface to allow any program to leverage TRACS functionalities, a configuration file and improved documentation.

The bipolar silicon microstrip detector: A proposal for a novel precision tracking device

International Nuclear Information System (INIS)

Horisberger, R.

1990-01-01

It is proposed to combine the technology of fully depleted microstrip detectors fabricated on n doped high resistivity silicon with the concept of the bipolar transistor. This is done by adding a n ++ doped region inside the normal p + implanted region of the reverse biased p + n diode. The resulting structure has amplifying properties and is referred to as bipaolar pixel transistor. The simplest readout scheme of a bipolar pixel array by an aluminium strip bus leads to the bipolar microstrip detector. The bipolar pixel structure is expected to give a better signal-to-noise performance for the detection of minimum ionizing charged particle tracks than the normal silicon diode strip detector and therefore should allow in future the fabrication of thinner silicon detectors for precision tracking. (orig.)

Signal generation in highly irradiated silicon microstrip detectors for the ATLAS experiment

International Nuclear Information System (INIS)

Ruggiero, Gennaro

2003-01-01

Silicon detectors are the most diffused tracking devices in High Energy Physics (HEP). The reason of such success can be found in the characteristics of the material together with the existing advanced technology for the fabrication of these devices. Nevertheless in many modem HEP experiments the observation of vary rare events require data taking at high luminosity with a consequent extremely intense hadron radiation field that damages the silicon and degrades the performance of these devices. In this thesis work a detailed study of the signal generation in microstrip detectors has been produced with a special care for the ATLAS semiconductor tracker geometry. This has required a development of an appropriate setup to perform measurements with Transient Current/ Charge Technique. This has allowed studying the evolution of the signal in several microstrips detector samples irradiated at fluences covering the range expected in the ATLAS Semiconductor Tracker. For a better understanding of these measurements a powerful software package that simulates the signal generation in these devices has been developed. Moreover in this thesis it has been also shown that the degradation due to radiation in silicon detectors can be strongly reduced if the data taking is done with detectors operated at 130 K. This makes low temperature operation that benefits of the recovery of the charge collection efficiency in highly irradiated silicon detectors (also known as Lazarus effect) an optimal option for future high luminosity experiments. (author)

The performance of silicon detectors for the SiliPET project: A small animal PET scanner based on stacks of silicon detectors

International Nuclear Information System (INIS)

Auricchio, Natalia; Domenico, Giovanni di; Zavattini, Guido; Milano, Luciano; Malaguti, Roberto

2011-01-01

We propose a new scanner for small animal Positron Emission Tomography (PET) based on stacks of double sided silicon detectors. Each stack is made of 40 planar detectors with dimension 60x60x1 mm 3 and 128 orthogonal strips on both sides to read the two coordinates of interaction, the third being the detector number in the stack. Multiple interactions in a stack are discarded by an exclusive OR applied between each detector plane of a stack. In this way we achieve a precise determination of the interaction point of the two 511 keV photons. The reduced dimensions of the scanner also improve the solid angle coverage resulting in a high sensitivity. Preliminary results were obtained with MEGA prototype tracker (11 double sided Si detector layers), divided into two stacks 2 cm apart made of, respectively, 5 and 6 prototype layers, placing a small spherical 22 Na source in different positions. We report on the results, spatial resolution, imaging and timing performances obtained with double sided silicon detectors, manufactured by ITC-FBK, having an active area of 3x3 cm 2 , thickness of 1 mm and a strip pitch of 500μm. Two different strip widths of 300 and 200μm equipped with 64 orthogonal p and n strips on opposite sides were read out with the VATAGP2.5 ASIC, a 128-channel 'general purpose' charge sensitive amplifier.

The New Silicon Strip Detectors for the CMS Tracker Upgrade

CERN Document Server

Dragicevic, Marko

2010-01-01

The first introductory part of the thesis describes the concept of the CMS experiment. The tasks of the various detector systems and their technical implementations in CMS are explained. To facilitate the understanding of the basic principles of silicon strip sensors, the subsequent chapter discusses the fundamentals in semiconductor technology, with particular emphasis on silicon. The necessary process steps to manufacture strip sensors in a so-called planar process are described in detail. Furthermore, the effects of irradiation on silicon strip sensors are discussed. To conclude the introductory part of the thesis, the design of the silicon strip sensors of the CMS Tracker are described in detail. The choice of the substrate material and the complex geometry of the sensors are reviewed and the quality assurance procedures for the production of the sensors are presented. Furthermore the design of the detector modules are described. The main part of this thesis starts with a discussion on the demands on the ...

The design, construction and performance of the ALEPH silicon vertex detector

International Nuclear Information System (INIS)

Mours, B.

1996-03-01

The ALEPH silicon vertex detector is the first detector operating in a colliding beam environment that uses silicon strip detectors which provide readout on both sides and hence a three-dimensional point measurement for the trajectory of charged particles. The detector system was commissioned successfully at the e + e - collider LEP at the research centre CERN, Switzerland, during the year 1991 while taking data at the Z 0 resonance. The achieved spatial resolution of the complete 73 728 channel device (intrinsic plus alignment) in 12 μm in the r.φ view and 12 μm in the z view. The design and construction of the entire detector system are discussed in detail and the experience gained in running the detector is described with special emphasis on the uses of this novel tracking device for the physics of short-lived heavy particles produced in the decays of the Z 0 resonance. (orig.)

MUST: A silicon strip detector array for radioactive beam experiments

CERN Document Server

Blumenfeld, Y; Sauvestre, J E; Maréchal, F; Ottini, S; Alamanos, N; Barbier, A; Beaumel, D; Bonnereau, B; Charlet, D; Clavelin, J F; Courtat, P; Delbourgo-Salvador, P; Douet, R; Engrand, M; Ethvignot, T; Gillibert, A; Khan, E; Lapoux, V; Lagoyannis, A; Lavergne, L; Lebon, S; Lelong, P; Lesage, A; Le Ven, V; Lhenry, I; Martin, J M; Musumarra, A; Pita, S; Petizon, L; Pollacco, E; Pouthas, J; Richard, A; Rougier, D; Santonocito, D; Scarpaci, J A; Sida, J L; Soulet, C; Stutzmann, J S; Suomijärvi, T; Szmigiel, M; Volkov, P; Voltolini, G

1999-01-01

A new and innovative array, MUST, based on silicon strip technology and dedicated to the study of reactions induced by radioactive beams on light particles is described. The detector consists of 8 silicon strip - Si(Li) telescopes used to identify recoiling light charged particles through time of flight, energy loss and energy measurements and to determine precisely their scattering angle through X, Y position measurements. Each 60x60 mm sup 2 double sided silicon strip detector with 60 vertical and 60 horizontal strips yields an X-Y position resolution of 1 mm, an energy resolution of 50 keV, a time resolution of around 1 ns and a 500 keV energy threshold for protons. The backing Si(Li) detectors stop protons up to 25 MeV with a resolution of approximately 50 keV. CsI crystals read out by photo-diodes which stop protons up to 70 MeV are added to the telescopes for applications where higher energy particles need to be detected. The dedicated electronics in VXIbus standard allow us to house the 968 logic and a...

ATLAS Tracker Upgrade: Silicon Strip Detectors and Modules for the sLHC

International Nuclear Information System (INIS)

Lefebvre, Michel; Minano Moya, Mercedes

2010-01-01

It is foreseen to increase the luminosity of the Large Hadron Collider (LHC) at CERN by a factor ten, with the upgraded machine dubbed Super-LHC or sLHC. The ATLAS experiment will require a new tracker for sLHC operation. In order to cope with the increase in pile-up backgrounds at the higher luminosity, an all silicon detector is being designed. The new strip detector will use significantly shorter strips than the current SCT in order to minimise the occupancy. As the increased luminosity will mean a corresponding increase in radiation dose, a new generation of extremely radiation hard silicon detectors is required. Extensive R programmes are underway to develop silicon sensors with sufficient radiation hardness. In parallel, new front-end electronics and readout systems are being designed to cope with the higher data rates. The challenges of powering and cooling a very large strip detector will be discussed. Ideas on possible schemes for the layout and support mechanics will be shown. (authors)

The silicon vertex detector of the Belle II experiment

Energy Technology Data Exchange (ETDEWEB)

Friedl, Markus, E-mail: friedl@hephy.a [Institute of High Energy Physics, Nikolsdorfergasse 18, A-1050 Vienna (Austria); Bergauer, Thomas; Gfall, Immanuel; Irmler, Christian; Valentan, Manfred [Institute of High Energy Physics, Nikolsdorfergasse 18, A-1050 Vienna (Austria)

2011-02-01

After 10 years of successful operation, the Belle experiment at KEK (Tsukuba, Japan) will be completed in 2010. Thereafter, a major upgrade of the KEK-B machine is foreseen until 2014, aiming at a final luminosity of 8x10{sup 35} cm{sup -2} s{sup -1}, which is about 40 times higher than the present peak value. Consequently, also the Belle experiment needs to be changed and the Silicon Vertex Detector (SVD) in particular will be completely replaced as it already operates close to its limits in the present system. The future SVD (a.k.a. SuperSVD) will consist of four layers of double-sided silicon strip detectors like the present one, but at larger radii, because it will be complemented by a two-layer pixel detector as the innermost sensing device. The SuperSVD will be entirely composed of silicon sensors made from 6 in. wafers read out by APV25 front-end chips that were originally developed for the CMS experiment at the LHC. Several years of R and D effort led to innovations such as the Origami chip-on-sensor concept and readout electronics with hit time finding which were successfully demonstrated on prototypes. These features will be included in the final system which is presently being designed. This paper will give an overview of the SuperSVD and present results from prototype tests ranging from detector modules to back-end electronics.

The silicon vertex detector of the Belle II experiment

International Nuclear Information System (INIS)

Friedl, Markus; Bergauer, Thomas; Gfall, Immanuel; Irmler, Christian; Valentan, Manfred

2011-01-01

After 10 years of successful operation, the Belle experiment at KEK (Tsukuba, Japan) will be completed in 2010. Thereafter, a major upgrade of the KEK-B machine is foreseen until 2014, aiming at a final luminosity of 8x10 35 cm -2 s -1 , which is about 40 times higher than the present peak value. Consequently, also the Belle experiment needs to be changed and the Silicon Vertex Detector (SVD) in particular will be completely replaced as it already operates close to its limits in the present system. The future SVD (a.k.a. SuperSVD) will consist of four layers of double-sided silicon strip detectors like the present one, but at larger radii, because it will be complemented by a two-layer pixel detector as the innermost sensing device. The SuperSVD will be entirely composed of silicon sensors made from 6 in. wafers read out by APV25 front-end chips that were originally developed for the CMS experiment at the LHC. Several years of R and D effort led to innovations such as the Origami chip-on-sensor concept and readout electronics with hit time finding which were successfully demonstrated on prototypes. These features will be included in the final system which is presently being designed. This paper will give an overview of the SuperSVD and present results from prototype tests ranging from detector modules to back-end electronics.

Electronics and readout of a large area silicon detector for LHC

International Nuclear Information System (INIS)

Borer, K.; Munday, D.J.; Parker, M.A.; Anghinolfi, F.; Aspell, P.; Campbell, M.; Chilingarov, A.; Jarron, P.; Heijne, E.H.M.; Santiard, J.C.; Scampoli, P.; Verweij, H.; Goessling, C.; Lisowski, B.; Reichold, A.; Spiwoks, R.; Tsesmelis, E.; Benslama, K.; Bonino, R.; Clark, A.G.; Couyoumtzelis, C.; Kambara, H.; Wu, X.; Fretwurst, E.; Lindstroem, G.; Schultz, T.; Bardos, R.A.; Gorfine, G.W.; Moorhead, G.F.; Taylor, G.N.; Tovey, S.N.; Bibby, J.H.; Hawkings, R.J.; Kundu, N.; Weidberg, A.; Campbell, D.; Murray, P.; Seller, P.; Teiger, J.

1994-01-01

The purpose of the RD2 project is to evaluate the feasibility of a silicon tracker and/or preshower detector for LHC. Irradiation studies with doses equivalent to those expected at LHC have been performed to determine the behavior of operational parameters such as leakage current, depletion voltage and charge collection during the life of the detector. The development of fast, dense, low power and low cost signal processing electronics is one of the major activities of the collaboration. We describe the first fully functional integrated analog memory chip with asynchronous read and write operations and level 1 trigger capture capabilities. A complete test beam system using this analog memory chip at 66 MHz has been successfully operated with RD2 prototype silicon detectors during various test runs. The flexibility of the electronics and readout have allowed us to easily interface our set-up to other data acquisition systems. Mechanical studies are in progress to design a silicon tracking detector with several million channels that may be operated at low (0-10 C) temperature, while maintaining the required geometrical precision. Prototype readout boards for such a detector are being developed and simulation studies are being performed to optimize the readout architecture. (orig.)

Performance of the INTPIX6 SOI pixel detector

International Nuclear Information System (INIS)

Arai, Y.; Miyoshi, T.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Turala, M.; Kucewicz, W.

2017-01-01

Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ  m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241 Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e − . The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e − . The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

Performance of the INTPIX6 SOI pixel detector

Science.gov (United States)

Arai, Y.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Kucewicz, W.; Miyoshi, T.; Turala, M.

2017-01-01

Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e-. The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e-. The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

Timing performances and edge effects of detectors worked from 6-in. silicon slices

International Nuclear Information System (INIS)

Aiello, S.; Anzalone, A.; Cardella, G.; Cavallaro, Sl.; De Filippo, E.; Di Pietro, A.; Femino, S.; Geraci, M.; Giustolisi, F.; Guazzoni, P.; Iacono Manno, M.; Lanzalone, G.; Lanzano, G.; Lo Nigro, S.; Musumarra, A.; Pagano, A.; Papa, M.; Pirrone, S.; Politi, G.; Porto, F.; Rizzo, F.; Sambataro, S.; Sperduto, M.L.; Sutera, C.; Zetta, L.

1997-01-01

Prototypes of new passivated implanted planar silicon detectors, obtained for the first time from 6 in. silicon slices, have been tested. The time and energy resolutions have been studied as a function of the type and energy of the detected particles, in order to test the performances of these detectors for time of flight measurements in the Chimera project. Some problems arising from edge effects observed in double-pad detectors have been solved by using a guard ring. (orig.)

Construction of the new silicon microstrips tracker for the Phase-II ATLAS detector

CERN Document Server

Liang, Zhijun; The ATLAS collaboration

2018-01-01

The inner detector of the present ATLAS detector has been designed and developed to function in the environment of the present Large Hadron Collider (LHC). At the next-generation tracking detector proposed for the High Luminosity LHC (HL-LHC), the so-called ATLAS Phase-II Upgrade, the particle densities and radiation levels will be higher by as much as a factor of ten. The new detectors must be faster, they need to be more highly segmented, and covering more area. They also need to be more resistant to radiation, and they require much greater power delivery to the front-end systems. For those reasons, the inner tracker of the ATLAS detector must be redesigned and rebuilt completely. The design of the ATLAS Upgrade inner tracker (ITk) has already been defined. It consists of several layers of silicon particle detectors. The innermost layers will be composed of silicon pixel sensors, and the outer layers will consist of silicon microstrip sensors. This paper will focus on the latest research and development act...

THE 15 LAYER SILICON DRIFT DETECTOR TRACKER IN EXPERIMENT 896

International Nuclear Information System (INIS)

Pandey, S.U.

1998-01-01

Large linear silicon drift detectors have been developed and are in production for use in several experiments. Recently 15 detectors were used as a tracking device in BNL-AGS heavy ion experiment (E896). The detectors were successfully operated in a 6.2 T magnetic field. The behavior of the detectors, such as drift uniformity, resolution, and charge collection efficiency are presented. The effect of the environment on the detector performance is discussed. Some results from the experimental run are presented. The detectors performed well in an experimental environment. This is the first tracking application of these detectors

Technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE)

Science.gov (United States)

Wegrzecka, Iwona; Panas, Andrzej; Bar, Jan; Budzyński, Tadeusz; Grabiec, Piotr; Kozłowski, Roman; Sarnecki, Jerzy; Słysz, Wojciech; Szmigiel, Dariusz; Wegrzecki, Maciej; Zaborowski, Michał

2013-07-01

The paper discusses the technology of silicon charged-particle detectors developed at the Institute of Electron Technology (ITE). The developed technology enables the fabrication of both planar and epiplanar p+-ν-n+ detector structures with an active area of up to 50 cm2. The starting material for epiplanar structures are silicon wafers with a high-resistivity n-type epitaxial layer ( ν layer - ρ < 3 kΩcm) deposited on a highly doped n+-type substrate (ρ< 0,02Ωcm) developed and fabricated at the Institute of Electronic Materials Technology. Active layer thickness of the epiplanar detectors (νlayer) may range from 10 μm to 150 μm. Imported silicon with min. 5 kΩcm resistivity is used to fabricate planar detectors. Active layer thickness of the planar detectors (ν) layer) may range from 200 μm to 1 mm. This technology enables the fabrication of both discrete and multi-junction detectors (monolithic detector arrays), such as single-sided strip detectors (epiplanar and planar) and double-sided strip detectors (planar). Examples of process diagrams for fabrication of the epiplanar and planar detectors are presented in the paper, and selected technological processes are discussed.

The BELLE silicon vertex detector

Energy Technology Data Exchange (ETDEWEB)

Alimonti, G.; Aihara, H.; Alexander, J.; Asano, Y.; Bakich, A.; Bozek, A.; Banas, E.; Browder, T.; Dragic, J.; Fukunaga, C.; Gordon, A.; Guler, H.; Everton, C.; Heenan, E.; Haba, J.; Hazumi, M.; Hastings, N.; Hara, T.; Hojo, T.; Higuchi, T.; Iwai, G.; Ishino, H.; Jalocha, P.; Korotuschenko, K.; Kaneko, J.; Kapusta, P.; Kawasaki, T.; Lange, J.S.; Li, Y.; Marlow, D.; Moloney, G.; Moffitt, L.; Mori, S.; Matsubara, T.; Nakadaira, T.; Nakamura, T.; Natkaniec, Z.; Okuno, S.; Olsen, S.; Ostrowicz, W.; Palka, H.; Peak, L.S.; Ryuko, J.; Rozanska, M.; Sevior, M.; Shimada, J.; Sumisawa, K.; Stock, R.; Stanic, S.; Swain, S.; Taylor, G.; Takasaki, F.; Tajima, H.; Trabelsi, K.; Tamura, N.; Tanaka, J.; Tanaka, M. E-mail: tanakam@post.kek.jp; Takahashi, S.; Tomura, T.; Tsuboyama, T.; Tsujita, Y.; Varner, G.; Varvell, K.E.; Watanabe, Y.; Yamamoto, H.; Yamada, Y.; Yokoyama, M.; Zhao, H.; Zontar, D

2000-10-11

A silicon vertex detector has been developed for the BELLE experiment at the KEK B-factory to be used to determine the relative displacements of B-meson decay vertices for CP violation measurements. The device has been successfully installed and operated with high-luminosity beam conditions. The average strip yield is larger than 96%, including the preamplifier electronics yield and the detector is currently working stably with a signal-to-noise ratio of 17-40. The measured impact parameter resolution agrees with expectations based on Monte Carlo simulations, and the measured D{sup 0} lifetime is in good agreement with the particle data group's average of other measurements. Several B{yields}J/{psi}K events produced at the {upsilon}(4S) resonance have been detected and separate decay vertices have been found.

Jagiellonian University Radiation Damage in Silicon Particle Detectors in High Luminosity Experiments

CERN Document Server

Oblakowska-Mucha, A

2017-01-01

Radiation damage is nowadays the most serious problem in silicon particle detectors placed in the very harsh radiation environment. This problem will be even more pronounced after the LHC Upgrade because of extremely strong particle fluences never encountered before. In this review, a few aspects of radiation damage in silicon trackers are presented. Among them, the change in the silicon lattice and its influence on the detector performance are discussed. Currently applied solutions and the new ideas for future experiments will be also shown. Most of the results presented in this summary were obtained within the RD50 Collaboration

A double sided silicon strip detector as a DRAGON end detector

CERN Document Server

Wrede, C; Rogers, J G; D'Auria, J M

2003-01-01

The new DRAGON facility (detector of recoils and gammas of nuclear reactions), located at the TRlUMF-ISAC Radioactive Beams facility in Vancouver, Canada is now operational. This facility is used to study radiative proton capture reactions in inverse kinematics (heavy ion beam onto a light gaseous target) with both stable beams and radioactive beams of mass A=13-26 in the energy range 0.15-1.5 MeV/u. A double sided silicon strip detector (DSSSD) has been used to detect recoil ions. Tests have been performed to determine the performance of this DSSSD.

Progress in multi-element silicon detectors for synchrotron XRF applications

International Nuclear Information System (INIS)

Ludewigt, B.; Rossington, C.; Kipnis, I.; Krieger, B.

1995-10-01

Multi-element silicon strip detectors, in conjunction with integrated circuit pulse-processing electronics, offer an attractive alternative to conventional lithium-drifted silicon and high purity germanium detectors for high count rate, low noise synchrotron x-ray fluorescence applications. We have been developing these types of detectors specifically for low noise synchrotron applications, such as extended x-ray absorption fine structure spectroscopy, microprobe x-ray fluorescence and total reflection x-ray fluorescence. The current version of the 192-element detector and integrated circuit preamplifier, cooled to -25 degrees C with a single-stage thermoelectric cooler, achieves an energy resolution of <200 eV full width of half maximum (FWHM) per channel (at 5.9 keV, 2 μs peaking time), and each detector element is designed to handle ∼20 kHz count rate. The detector system will soon be completed to 64 channels using new application specific integrated circuit (ASIC) amplifier chips, new CAMAC (Computer Automated Measurement and Control standard) analog-to-digital converters recently developed at Lawrence Berkeley National Laboratory (LBNL), CAMAC histogramming modules, and Macintosh-based data acquisition software. We report on the characteristics of this detector system, and the work in progress towards the next generation system

Infrared LED Array For Silicon Strip Detector Qualification

CERN Document Server

Dirkes, Guido; Hartmann, Frank; Heier, Stefan; Schwerdtfeger, Wolfgang; Waldschmitt, M; Weiler, K W; Weseler, Siegfried

2003-01-01

The enormous amount of silicon strip detector modules for the CMS tracker requires a test-sytem to allow qualification of each individual detector module and its front-end electronics within minutes. The objective is to test the detector with a physical signal. Signals are generated in the detector by illumination with lightpulses emitted by a LED at 950~nm and with a rise time of 10~ns. In order to avoid a detector moving, an array of 64 LEDs is used, overlaping the complete detector width. The total length of an array is 15~cm. The spot size of an individual LED is controlled by apertures to illuminate about 25 strips. Furthermore it is possible to simulate the high leakage current of irradiated sensors by constant illumination of the sensor. This provides an effective mean to identfy pinholes on a sensor.

Silicon position-sensitive detectors for the Helios (NA 34) experiment

Energy Technology Data Exchange (ETDEWEB)

Engels, E Jr; Mani, S; Manns, T; Plants, D; Shepard, P F; Thompson, J A; Tosh, R; Chand, T; Shivpuri, R; Baker, W

1987-01-15

The design construction and testing of X-Y tracking modules for a silicon microstrip vertex detector for use in Fermilab experiment E706 is discussed. A successful adaptation of various technologies, essential for instrumenting this class of detectors at a university laboratory is described. Emphasis is placed on considerable cost reduction, design flexibiity and more rapid turnover with a view toward large detectors for the future.

Silicon position sensitive detectors for the Helios (NA 34) experiment

Energy Technology Data Exchange (ETDEWEB)

Engels, E Jr; Mani, S; Manns, T; Plants, D; Shepard, P F; Thompson, J A; Tosh, R; Chand, T; Shivpuri, R; Baker, W

1987-01-15

The design construction and testing of X-Y tracking modules for a silicon microstrip vertex detector for use in Fermilab experiment E706 is discussed. A successful adaptation of various technologies, essential for instrumenting this class of detectors at a university laboratory is described. Emphasis is placed on considerable cost reduction, design flexibiity and more rapid turnover with a view toward large detectors for the future.

Design, characterization and beam test performance of different silicon microstrip detector geometries

International Nuclear Information System (INIS)

Catacchini, E.; Ciampolini, L.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Lenzi, M.; Meschini, M.; Parrini, G.; Pieri, M.

1998-01-01

During the last few years a large number of silicon microstrip detectors has been especially designed and tested in order to study and optimize the performances of the tracking devices to be used in the forward-backward part of the CMS (technical proposal, CERN/LHCC 94-38 LHCC/Pl, 15 December 1994) experiment. Both single and double sided silicon detectors of a trapezoidal ('wedge') shape and with different strip configurations, including prototypes produced with double metal technology, were characterized in the laboratory and tested using high-energy beams. Furthermore, due to the high-radiation environment where the detectors should operate, particular care was devoted to the study of the characteristics of heavily irradiated detectors. The main results of detector performances (charge response, signal-to-noise ratio, spatial resolution etc.) will be reviewed and discussed. (author)

The development of a silicon multiplicity detector system

Energy Technology Data Exchange (ETDEWEB)

Beuttenmuller, R.H.; Kraner, H.W.; Lissauer, D.; Makowiecki, D.; Polychronakos, V.; Radeka, V.; Sondericker, J.; Stephani, D. [Brookhaven National Laboratory, Upton, NY (United States); Barrette, J.; Hall, J.; Mark, S.K.; Pruneau, C.A. [McGill Univ., Montreal, Quebec (Canada); Wolfe, D. [Univ. of New Mexico, Albuquerque (United States); Borenstein, S.R. [York College-CUNY, Jamaica, NY (United States)

1991-12-31

The physics program and the design criteria for a Silicon Pad Detector at RHIC are reviewed. An end cap double sided readout detector configuration for RHIC is presented. Its performance as an on-line and off-line centrality tagging device is studied by means of simulations with Fritiof as the event generator. The results of an in-beam test of a prototype double-sided Si-detector are presented. Good signal-to-noise ratio are obtained with front junction and the resistive back side readout. Good separation between one and two minimum-ionizing particle signals is achieved.

Design and test of a prototype silicon detector module for ATLAS Semiconductor Tracker endcaps

International Nuclear Information System (INIS)

Clark, A.G.; Donega, M.; D'Onofrio, M.

2005-01-01

The ATLAS Semiconductor Tracker (SCT) will be a central part of the tracking system of the ATLAS experiment. The SCT consists of four concentric barrels of silicon detectors as well as two silicon endcap detectors formed by nine disks each. The layout of the forward silicon detector module presented in this paper is based on the approved layout of the silicon detectors of the SCT, their geometry and arrangement in disks, but uses otherwise components identical to the barrel modules of the SCT. The module layout is optimized for excellent thermal management and electrical performance, while keeping the assembly simple and adequate for a large scale module production. This paper summarizes the design and layout of the module and present results of a limited prototype production, which has been extensively tested in the laboratory and testbeam. The module design was not finally adopted for series production because a dedicated forward hybrid layout was pursued

Silicon pixel-detector R&D for CLIC

CERN Document Server

AUTHOR|(SzGeCERN)718101

2016-01-01

The physics aims at the future CLIC high-energy linear e+e- collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The principal challenges are: a point resolution of a few μm, ultra-low mass (∼ 0.2% X${}_0$ per layer for the vertex region and ∼ 1 % X${}_0$ per layer for the outer tracker), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ∼ 10 ns time stamping capabilities. A highly granular all-silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints. For the vertex-detector region, hybrid pixel detectors with small pitch (25 μm) and analog readout are explored. For the outer trac...

The paradox of characteristics of silicon detectors operated at temperature close to liquid helium

Science.gov (United States)

Eremin, V.; Shepelev, A.; Verbitskaya, E.; Zamantzas, C.; Galkin, A.

2018-05-01

The aim of this study is to give characterization of silicon p+/n/n+ detectors for the monitoring systems of the Large Hadron Collider machine at CERN with the focus on justifying the choice of silicon resistivity for the detector operation at the temperature of 1.9-10 K. The detectors from n-type silicon with the resistivity of 10, 4.5, and 0.5 kΩ cm were investigated at the temperature from 293 up to 7 K by the Transient Current Technique with a 660 nm pulse laser and alpha-particles. The shapes of the detector current pulse response allowed revealing a paradox in the properties of shallow donors of phosphorus, i.e., native dopants in the n-type Si. There was no carrier freeze-out on the phosphorus energy levels in the space charge region (SCR), and they remained positively charged irrespective of temperature, thus limiting the depleted region depth. As for the base region of a partially depleted detector, the levels became neutral at T < 28 K, which transformed silicon to an insulator. The reduction of the activation energy for carrier emission in the detector SCR estimated in the scope of the Poole-Frenkel effect failed to account for the impact of the electric field on the properties of phosphorus levels. The absence of carrier freeze-out in the SCR justifies the choice of high resistivity silicon as the only proper material for detector operation in a fully depleted mode at extremely low temperature.

A beta ray spectrometer based on a two-, or three-element silicon detector coincidence telescope

International Nuclear Information System (INIS)

Horowitz, Y.S.; Weizman, Y.; Hirning, C.R.

1995-01-01

The operation of a beta ray energy spectrometer based on a two-or three-element silicon detector telescope is described. The front detector (A) is a thin, totally depleted, silicon surface barrier detector either 40 μm, 72 μm or 98 μm thick. The back detector (C) is a Li compensated silicon detector, 5000 μm thick. An additional thin detector can be inserted between these two detectors when additional photon rejection capability is required in intense photon fields. The capability of the spectrometer to reject photons is based on the fact that incident photons will have a small probability of simultaneously losing detectable energy in two detectors and an even smaller probability of losing detectable energy in all three detectors. Electrons, however, above a low energy threshold, will always record simultaneous, events in all three detectors. The spectrometer is capable of measuring electron energies from a lower energy coincidence threshold of 70 keV with 60% efficiency increasing to 100% efficiency in the energy region between 150 keV and 2.5 MeV. (Author)

Production and Quality Assurance of Detector Modules for the LHCb Silicon Tracker

CERN Document Server

Volyanskyy, D; Agari, M; Bauer, C; Blouw, J; Hofmann, W; Löchner, S; Maciuc, F; Schmelling, M; Smale, N; Schwingenheuer, B; Voss, H; Borysova, M; Ohrimenko, O; Pugatch, V; Yakovenko, V; Bay, A; Bettler, M O; Fauland, P; Frei, R; Nicolas, L; Knecht, M; Perrin, A; Schneider, O; Tran, M T; Van Hunen, J; Vervink, K; Adeva, B; Esperante-Pereira, D; Gallas, A; Fungueirino-Pazos, J L; Lois, C; Pazos-Alvarez, A; Pérez-Trigo, E; Pló-Casasus, M; Vázquez, P; Bernhard, R P; Bernet, R; Gassner, J; Köstner, S; Lehner, F; Needham, M; Sakhelashvili, T; Steiner, S; Straumann, U; Van Tilburg, J; Vollhardt, A; Wenger, A

2007-01-01

The LHCb experiment, which is currently under construction at the Large Hadron Collider~(CERN, Geneva), is designed to study $CP$ violation and find rare decays in the $B$ meson system. To achieve the physics goals the LHCb detector must have excellent tracking performance. An important element of the LHCb tracking system is the Silicon Tracker, which covers a sensitive surface of about 12~m$^2$ with silicon microstrip detectors and includes about 272k readout channels. It uses up to 132~cm long detector modules with readout strips of up to 38~cm in length and up to 57~cm long Kapton interconnects in between sensors and readout hybrids. The production of detector modules has been completed recently and the detector is currently under installation. A rigorous quality assurance programme has been performed to ensure that the detector modules meet the mechanical and electrical requirements and study their various characteristics. In this paper, the detector design, the module production steps, and the module qua...

Numerical simulation of the oxygen concentration distribution in silicon melt for different crystal lengths during Czochralski growth with a transverse magnetic field

Science.gov (United States)

Chen, Jyh-Chen; Chiang, Pei-Yi; Nguyen, Thi Hoai Thu; Hu, Chieh; Chen, Chun-Hung; Liu, Chien-Cheng

2016-10-01

A three-dimensional simulation model is used to study the oxygen concentration distribution in silicon crystal during the Czochralski growth process under a transverse uniform magnetic field. The flow, temperature, and oxygen concentration distributions inside the furnace are calculated for different crystal lengths. There is significant variation in the flow structure in the melt with the growth length. The results show that in the initial stages, there is a decrease in the oxygen concentration at the crystal-melt interface as the length of the growing crystal increases. As the crystal lengthens further, a minimum value is reached after which the oxygen concentration increases continuously. This trend is consistent with that shown in the experimental results. The variation of the oxygen concentration with the growth length is strongly related to the depth of the melt in the crucible and the flow structure inside the melt. Better uniformity of the axial oxygen concentration can be achieved by proper adjustment of the crucible rotation rate during the growth process.

Probe station for testing of ALICE silicon drift detectors

CERN Document Server

Humanic, T J; Piemonte, C; Rashevsky, A; Sugarbaker, E R; Vacchi, A

2003-01-01

Large area, 7.25 cm multiplied by 8.76 cm silicon drift detectors have been developed and are in production for the ALICE experiment at LHC. An active area of the detector of more than 50 cm**2 imposes high demands on the quality of processing and raw material. Automated testing procedures have been developed to test detectors before mounting them on the ladders. Probe stations for ALICE SDD testing were designed and built at INFN, Trieste and Ohio State University (OSU). Testing procedures, detector selection criteria and some details of the OSU probe station design are discussed.

Silicon microstrip detectors for the ATLAS SCT

Czech Academy of Sciences Publication Activity Database

Robinson, D.; Allport, P.; Andricek, L.; Böhm, Jan; Buttar, C.; Carter, J. R.; Chilingarov, A.; Clark, A. G.; Feriere, D.; Fuster, J.

2002-01-01

Roč. 485, 1-2 (2002), s. 84-88 ISSN 0168-9002 R&D Projects: GA MPO RP-4210/69 Institutional research plan: CEZ:AV0Z1010920 Keywords : ATLAS SCT * silicon microstrip detectors * irradiation * quality control Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.167, year: 2002

Accelerated life test of an ONO stacked insulator film for a silicon micro-strip detector

International Nuclear Information System (INIS)

Okuno, Shoji; Ikeda, Hirokazu; Saitoh, Yutaka

1996-01-01

We have used to acquire the signal through an integrated capacitor for a silicon micro-strip detector. When we have been using a double-sided silicon micro-strip detector, we have required a long-term stability and a high feasibility for the integrated capacitor. An oxide-nitride-oxide (ONO) insulator film was theoretically expected to have a superior nature in terms of long term reliability. In order to test long term reliability for integrated capacitor of a silicon micro-strip detector, we made a multi-channel measuring system for capacitors

Silicon surface barrier detectors used for liquid hydrogen density measurement

Science.gov (United States)

James, D. T.; Milam, J. K.; Winslett, H. B.

1968-01-01

Multichannel system employing a radioisotope radiation source, strontium-90, radiation detector, and a silicon surface barrier detector, measures the local density of liquid hydrogen at various levels in a storage tank. The instrument contains electronic equipment for collecting the density information, and a data handling system for processing this information.

Silicon Drift Detector response function for PIXE spectra fitting

Science.gov (United States)

Calzolai, G.; Tapinassi, S.; Chiari, M.; Giannoni, M.; Nava, S.; Pazzi, G.; Lucarelli, F.

2018-02-01

The correct determination of the X-ray peak areas in PIXE spectra by fitting with a computer program depends crucially on accurate parameterization of the detector peak response function. In the Guelph PIXE software package, GUPIXWin, one of the most used PIXE spectra analysis code, the response of a semiconductor detector to monochromatic X-ray radiation is described by a linear combination of several analytical functions: a Gaussian profile for the X-ray line itself, and additional tail contributions (exponential tails and step functions) on the low-energy side of the X-ray line to describe incomplete charge collection effects. The literature on the spectral response of silicon X-ray detectors for PIXE applications is rather scarce, in particular data for Silicon Drift Detectors (SDD) and for a large range of X-ray energies are missing. Using a set of analytical functions, the SDD response functions were satisfactorily reproduced for the X-ray energy range 1-15 keV. The behaviour of the parameters involved in the SDD tailing functions with X-ray energy is described by simple polynomial functions, which permit an easy implementation in PIXE spectra fitting codes.

A test-bench for measurement of electrical static parameters of strip silicon detectors

International Nuclear Information System (INIS)

Golutvin, I.A.; Dmitriev, A.Yu.; Elsha, V.V.

2003-01-01

An automated test-bench for electrical parameters input control of the strip silicon detectors, used in the End-Cap Preshower detector of the CMS experiment, is described. The test-bench application allows one to solve a problem of silicon detectors input control in conditions of mass production - 1800 detectors over 2 years. The test-bench software is realized in Delphi environment and contains a user-friendly operator interface for data processing and visualization as well as up-to-date facilities for MS-Windows used for the network database. High operating characteristics and reliability of the test-bench were confirmed while more than 800 detectors were tested. Some technical solutions applied to the test-bench could be useful for design and construction of automated facilities for electrical parameters measurements of the microstrip detectors input control. (author)

A Test-Bench for Measurement of Electrical Static Parameters of Strip Silicon Detectors

CERN Document Server

Golutvin, I A; Danilevich, V G; Dmitriev, A Yu; Elsha, V V; Zamiatin, Y I; Zubarev, E V; Ziaziulia, F E; Kozus, V I; Lomako, V M; Stepankov, D V; Khomich, A P; Shumeiko, N M; Cheremuhin, A E

2003-01-01

An automated test-bench for electrical parameters input control of the strip silicon detectors, used in the End-Cap Preshower detector of the CMS experiment, is described. The test-bench application allows one to solve a problem of silicon detectors input control in conditions of mass production - 1800 detectors over 2 years. The test-bench software is realized in Delphi environment and contains a user-friendly operator interface for measurement data processing and visualization as well as up-to-date facilities for MS-Windows used for the network database. High operating characteristics and reliability of the test-bench were confirmed while more than 800 detectors were tested. Some technical solutions applied to the test-bench could be useful for design and construction of automated facilities for electrical parameters measurements of the microstrip detectors input control.

Prototyping of Silicon Strip Detectors for the Inner Tracker of the ALICE Experiment

CERN Document Server

Sokolov, Oleksiy

2006-01-01

The ALICE experiment at CERN will study heavy ion collisions at a center-of-mass energy 5.5∼TeV per nucleon. Particle tracking around the interaction region at radii r<45 cm is done by the Inner Tracking System (ITS), consisting of six cylindrical layers of silicon detectors. The outer two layers of the ITS use double-sided silicon strip detectors. This thesis focuses on testing of these detectors and performance studies of the detector module prototypes at the beam test. Silicon strip detector layers will require about 20 thousand HAL25 front-end readout chips and about 3.5 thousand hybrids each containing 6 HAL25 chips. During the assembly procedure, chips are bonded on a patterned TAB aluminium microcables which connect to all the chip input and output pads, and then the chips are assembled on the hybrids. Bonding failures at the chip or hybrid level may either render the component non-functional or deteriorate its the performance such that it can not be used for the module production. After each bond...

Photon response of silicon diode neutron detectors

International Nuclear Information System (INIS)

McCall, R.C.; Jenkins, T.M.; Oliver, G.D. Jr.

1976-07-01

The photon response of silicon diode neutron detectors was studied to solve the problem on detecting neutrons in the presence of high energy photons at accelerator neutron sources. For the experiment Si diodes, Si discs, and moderated activation foil detectors were used. The moderated activation foil detector consisted of a commercial moderator and indium foils 2'' in diameter and approximately 2.7 grams each. The moderator is a cylinder of low-density polyethylene 6 1 / 4 '' in diameter by 6 1 / 16 '' long covered with 0.020'' of cadmium. Neutrons are detected by the reaction 115 In (n,γ) 116 In(T/sub 1 / 2 / = 54 min). Photons cannot be detected directly but photoneutrons produced in the moderator assembly can cause a photon response. The Si discs were thin slices of single-crystal Si about 1.4 mils thick and 1'' in diameter which were used as activation detectors, subsequently being counted on a thin-window pancake G.M. counter. The Si diode fast neutron dosimeter 5422, manufactured by AB Atomenergi in Studsvik, Sweden, consists of a superdoped silicon wafer with a base width of 0.050 inches between two silver contacts coated with 2 mm of epoxy. For this experiment, the technique of measuring the percent change of voltage versus dose was used. Good precision was obtained using both unirradiated and preirradiated diodes. All diodes, calibrated against 252 CF in air,were read out 48 hours after irradiation to account for any room temperature annealing. Results are presented and discussed

Plasma effects for heavy ions in implanted silicon detectors

International Nuclear Information System (INIS)

Aiello, S.; Anzalone, A.; Campisi, M.G.; Cardella, G.; Cavallaro, Sl.; Filippo, E. De; Geraci, E.; Geraci, M.; Guazzoni, P.; Manno, M.C. Iacono; Lanzalone, G.; Lanzano, G.; Nigro, S. Lo; Pagano, A.; Papa, M.; Pirrone, S.; Politi, G.; Porto, F.; Rizzo, F.; Sambataro, S.; Sperduto, M.L.; Sutera, C.; Zetta, L.

1999-01-01

Plasma effects for heavy ions in implanted silicon detectors have been investigated for different detector characteristics as a function of type and energy of the detected particles. A new approach is presented and used to reproduce the effect of the plasma delay in the timing performances. The results are in good agreement with the present data and with previous measurements found in the literature

Silicon detectors for the sLHC

Czech Academy of Sciences Publication Activity Database

Affolder, A.; Aleev, A.; Allport, P.P.; Böhm, Jan; Mikeštíková, Marcela; Popule, Jiří; Šícho, Petr; Tomášek, Michal; Vrba, Václav

2011-01-01

Roč. 658, č. 1 (2011), s. 11-16 ISSN 0168-9002 R&D Projects: GA MŠk LA08032; GA ČR GA202/05/0653; GA MŠk 1P04LA212 Institutional research plan: CEZ:AV0Z10100502 Keywords : silicon particle detectors * radiation damage * irradiation * charge collection efficiency Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 1.207, year: 2011

One dimensional detector for X-ray diffraction with superior energy resolution based on silicon strip detector technology

International Nuclear Information System (INIS)

Dąbrowski, W; Fiutowski, T; Wiącek, P; Fink, J; Krane, H-G

2012-01-01

1-D position sensitive X-ray detectors based on silicon strip detector technology have become standard instruments in X-ray diffraction and are available from several vendors. As these devices have been proven to be very useful and efficient further improvement of their performance is investigated. The silicon strip detectors in X-ray diffraction are primarily used as counting devices and the requirements concerning the spatial resolution, dynamic range and count rate capability are of primary importance. However, there are several experimental issues in which a good energy resolution is important. The energy resolution of silicon strip detectors is limited by the charge sharing effects in the sensor as well as by noise of the front-end electronics. The charge sharing effects in the sensor and various aspects of the electronics, including the baseline fluctuations, which affect the energy resolution, have been analyzed in detail and a new readout concept has been developed. A front-end ASIC with a novel scheme of baseline restoration and novel interstrip logic circuitry has been designed. The interstrip logic is used to reject the events resulting in significant charge sharing between neighboring strips. At the expense of rejecting small fraction of photons entering the detector one can obtain single strip energy spectra almost free of charge sharing effects. In the paper we present the design considerations and measured performance of the detector being developed. The electronic noise of the system at room temperature is typically of the order of 70 el rms for 17 mm long silicon strips and a peaking time of about 1 μs. The energy resolution of 600 eV FWHM has been achieved including the non-reducible charge sharing effects and the electronic noise. This energy resolution is sufficient to address a common problem in X-ray diffraction, i.e. electronic suppression of the fluorescence radiation from samples containing iron or cobalt while irradiated with 8.04 ke

cap alpha. -spectra hyperfine structure resolution by silicon planar detectors

Energy Technology Data Exchange (ETDEWEB)

Eremin, V K; Verbitskaya, E M; Strokan, N B; Sukhanov, V L; Malyarenko, A M

1986-10-01

The lines with 13 keV step from the main one is ..cap alpha..-spectra of nuclei with an odd number of nucleons take place. Silicon planar detectors n-Si with the operation surface of 10 mm/sup 2/ are developed for resolution of this hyperfine structure. The mechanism of losses in detectors for short-range-path particles is analyzed. The results of measurements from detectors with 10 keV resolution are presented.

Radiation damage in lithium-counterdoped N/P silicon solar cells

Science.gov (United States)

Hermann, A. M.; Swartz, C. K.; Brandhorst, H. W., Jr.; Weinberg, I.

1980-01-01

The radiation resistance and low-temperature annealing properties of lithium-counterdoped n(+)-p silicon solar cells are investigated. Cells fabricated from float zone and Czochralski grown silicon were irradiated with 1 MeV electrons and their performance compared to that of 0.35 ohm-cm control cells. The float zone cells demonstrated superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Annealing kinetics were found to lie between first and second order for relatively short times, and the most likely annealing mechanism was found to be the diffusion of lithium to defects with the subsequent neutralization of defects by combination with lithium. Cells with zero lithium gradients exhibited the best radiation resistance.

Novel detectors for silicon based microdosimetry, their concepts and applications

Science.gov (United States)

Rosenfeld, Anatoly B.

2016-02-01

This paper presents an overview of the development of semiconductor microdosimetry and the most current (state-of-the-art) Silicon on Insulator (SOI) detectors for microdosimetry based mainly on research and development carried out at the Centre for Medical Radiation Physics (CMRP) at the University of Wollongong with collaborators over the last 18 years. In this paper every generation of CMRP SOI microdosimeters, including their fabrication, design, and electrical and charge collection characterisation are presented. A study of SOI microdosimeters in various radiation fields has demonstrated that under appropriate geometrical scaling, the response of SOI detectors with the well-known geometry of microscopically sensitive volumes will record the energy deposition spectra representative of tissue cells of an equivalent shape. This development of SOI detectors for microdosimetry with increased complexity has improved the definition of microscopic sensitive volume (SV), which is modelling the deposition of ionising energy in a biological cell, that are led from planar to 3D SOI detectors with an array of segmented microscopic 3D SVs. The monolithic ΔE-E silicon telescope, which is an alternative to the SOI silicon microdosimeter, is presented, and as an example, applications of SOI detectors and ΔE-E monolithic telescope for microdosimetery in proton therapy field and equivalent neutron dose measurements out of field are also presented. An SOI microdosimeter "bridge" with 3D SVs can derive the relative biological effectiveness (RBE) in 12C ion radiation therapy that matches the tissue equivalent proportional counter (TEPC) quite well, but with outstanding spatial resolution. The use of SOI technology in experimental microdosimetry offers simplicity (no gas system or HV supply), high spatial resolution, low cost, high count rates, and the possibility of integrating the system onto a single device with other types of detectors.

An improved detector response simulation for the CBM silicon tracking system

Energy Technology Data Exchange (ETDEWEB)

Malygina, Hanna [Goethe University, Frankfurt (Germany); Friese, Volker [GSI, Darmstadt (Germany); Collaboration: CBM-Collaboration

2015-07-01

The Compressed Baryonic Matter experiment(CBM) at FAIR is designed to explore the QCD phase diagram in the region of high net-baryon densities. The central detector component the Silicon Tracking System (STS) is build from double-sided micro-strip sensors. To achieve realistic simulations the response of the silicon strip sensors should be precisely included in the digitizer which simulates a complete chain of physical processes caused by charged particles traversing the detector, from charge creation in silicon to a digital output signal. The new version of the STS digitizer comprises in addition non-uniform energy loss distributions (according to the Urban theory), thermal diffusion and charge redistribution over the read-out channels due to interstrip capacitances. The improved response simulation was tested with parameters reproducing the anticipated running conditions of the CBM experiment. Two different method for cluster finding were used. The results for hit position residuals, cluster size distribution, as well as for some other parameters of reconstruction quality are presented. The achieved advance is assessed by a comparison with the previous, simpler version of the STS detector response simulation.

Feasibility studies of microelectrode silicon detectors with integrated electronics

International Nuclear Information System (INIS)

Dalla Betta, G.-F.; Batignani, G.; Bettarini, S.; Boscardin, M.; Bosisio, L.; Carpinelli, M.; Dittongo, S.; Forti, F.; Giorgi, M.; Gregori, P.; Lusiani, A.; Manghisoni, M.; Pignatel, G.U.; Rama, M.; Ratti, L.; Re, V.; Sandrelli, F.; Speziali, V.; Svelto, F.; Zorzi, N.

2002-01-01

We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications. We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source-follower configuration is introduced

14C autoradiography with an energy-sensitive silicon pixel detector.

Science.gov (United States)

Esposito, M; Mettivier, G; Russo, P

2011-04-07

The first performance tests are presented of a carbon-14 ((14)C) beta-particle digital autoradiography system with an energy-sensitive hybrid silicon pixel detector based on the Timepix readout circuit. Timepix was developed by the Medipix2 Collaboration and it is similar to the photon-counting Medipix2 circuit, except for an added time-based synchronization logic which allows derivation of energy information from the time-over-threshold signal. This feature permits direct energy measurements in each pixel of the detector array. Timepix is bump-bonded to a 300 µm thick silicon detector with 256 × 256 pixels of 55 µm pitch. Since an energetic beta-particle could release its kinetic energy in more than one detector pixel as it slows down in the semiconductor detector, an off-line image analysis procedure was adopted in which the single-particle cluster of hit pixels is recognized; its total energy is calculated and the position of interaction on the detector surface is attributed to the centre of the charge cluster. Measurements reported are detector sensitivity, (4.11 ± 0.03) × 10(-3) cps mm(-2) kBq(-1) g, background level, (3.59 ± 0.01) × 10(-5) cps mm(-2), and minimum detectable activity, 0.0077 Bq. The spatial resolution is 76.9 µm full-width at half-maximum. These figures are compared with several digital imaging detectors for (14)C beta-particle digital autoradiography.

Accurate and independent spectral response scale based on silicon trap detectors and spectrally invariant detectors

International Nuclear Information System (INIS)

Gran, Jarle

2005-01-01

The study aims to establish an independent high accuracy spectral response scale over a broad spectral range based on standard laboratory equipment at a moderate cost. This had to be done by a primary method, where the responsivity of the detector is linked to fundamental constants. Summary, conclusion and future directions: In this thesis it has been demonstrated that an independent spectral response scale from the visual to the IR based on simple relative measurements can be established. The accuracy obtained by the hybrid self-calibration method demonstrates that state of the art accuracy is obtained with self-calibration principles. A calculable silicon trap detector with low internal losses over a wide spectral range is needed to establish the scale, in addition to a linear, spectrally independent detector with a good signal to noise ratio. By fitting the parameters in the responsivity model to a purely relative measurement we express the spectral response in terms of fundamental constants with a known uncertainty This is therefore a primary method. By applying a digital filter on the relative measurements of the InGaAs detectors in the infrared reduces the standard deviation by 30 %. In addition, by optimising the necessary scaling constant converting the relative calibration to absolute values, we have managed to establish an accurate and cost efficient spectral response scale in the IR. The full covariance analysis, which takes into account the correlation in the absolute values of the silicon detector, the correlation caused by the filter and the scaling constant, shows that the spectral response scale established in the infrared with InGaAs detectors is done with high accuracy. A similar procedure can be used in the UV, though it has not been demonstrated here. In fig. 10 the responsitivities of the detectors (a) and their associated uncertainties (b) at the 1 sigma level of confidence is compared for the three publications. We see that the responsivity

Development of advanced Czochralski Growth Process to produce low cost 150 KG silicon ingots from a single crucible for technology readiness

Science.gov (United States)

1981-01-01

The goals in this program for advanced czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness are outlined. To provide a modified CG2000 crystal power capable of pulling a minimum of five crystals, each of approximately 30 kg in weight, 150 mm diameter from a single crucible with periodic melt replenishment. Crystals to have: resistivity of 1 to 3 ohm cm, p-type; dislocation density below 1- to the 6th power per cm; orientation (100); after growth yield of greater than 90%. Growth throughput of greater than 2.5 kg per hour of machine operation using a radiation shield. Prototype equipment suitable for use as a production facility. The overall cost goal is $.70 per peak watt by 1986. To accomplish these goals, the modified CG2000 grower and development program includes: (1) increased automation with a microprocessor based control system; (2) sensors development which will increase the capability of the automatic controls system, and provide technology transfer of the developed systems.

Silicon Detector System for High Rate EXAFS Applications

OpenAIRE

Pullia, A.; Kraner, H. W.; Siddons, D. P.; Furenlid, L. R.; Bertuccio, G.

1995-01-01

A multichannel silicon pad detector for EXAFS (Extended X-ray Absorption Fine Structure) applications has been designed and built. The X-ray spectroscopic measurements demonstrate that an adequate energy resolution of 230 eV FWHM (corresponding to 27 rms electrons in silicon) can be achieved reliably at −35 °C. A resolution of 190 eV FWHM (corresponding to 22 rms electrons) has been obtained from individual pads at −35 °C. At room temperature (25 °C) an average energy resolution of 380 eV FWH...

The fabrication of nitrogen detector porous silicon nanostructures

Science.gov (United States)

Husairi, F. S.; Othman, N.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

2018-05-01

In this study the porous silicon nanostructure used as a the nitrogen detector was fabricated by using anodization method because of simple and easy to handle. This method using 20 mA/ cm2 of current density and the etching time is from 10 - 40 minutes. The properties of the porous silicon nanostructure analyzed using I-V testing (electrical properties) and photoluminescence spectroscopy. From the I-V testing, sample PsiE40 where the sensitivity is 25.4% is a sensitivity of PSiE40 at 10 seconds exposure time.

Energy response of neutron area monitor with silicon semiconductor detector

International Nuclear Information System (INIS)

Kitaguchi, Hiroshi; Izumi, Sigeru; Kobayashi, Kaoru; Kaihara, Akihisa; Nakamura, Takashi.

1993-01-01

A prototype neutron area monitor with a silicon semiconductor detector has been developed which has the energy response of 1 cm dose equivalent recommended by the ICRP-26. Boron and proton radiators are coated on the surface of the silicon semiconductor detector. The detector is set at the center of a cylindrical polyethylene moderator. This moderator is covered by a porous cadmium board which serves as the thermal neutron absorber. Neutrons are detected as α-particles generated by the nuclear reaction 10 B(n,α) 7 Li and as recoil protons generated by the interaction of fast neutrons with hydrogen. The neutron energy response of the monitor was measured using thermal neutrons and monoenergetic fast neutrons generated by an accelerator. The response was consistent with the 1 cm dose equivalent response required for the monitor within ±34% in the range of 0.025 - 15 Mev. (author)

Laminated Amorphous Silicon Neutron Detector (pre-print)

International Nuclear Information System (INIS)

McHugh, Harry; Branz, Howard; Stradins, Paul; Xu, Yueqin

2009-01-01

An internal R and D project was conducted at the Special Technologies Laboratory (STL) of National Security Technologies, LLC (NSTec), to determine the feasibility of developing a multi-layer boron-10 based thermal neutron detector using the amorphous silicon (AS) technology currently employed in the manufacture of liquid crystal displays. The boron-10 neutron reaction produces an alpha that can be readily detected. A single layer detector, limited to an approximately 2-micron-thick layer of boron, has a theoretical sensitivity of about 3%; hence a thin multi-layer device with high sensitivity can theoretically be manufactured from single layer detectors. Working with National Renewable Energy Laboratory (NREL), an AS PiN diode alpha detector was developed and tested. The PiN diode was deposited on a boron-10 coated substrate. Testing confirmed that the neutron sensitivity was nearly equal to the theoretical value of 3%. However, adhesion problems with the boron-10 coating prevented successful development of a prototype detector. Future efforts will include boron deposition work and development of integrated AS signal processing circuitry.

The Belle II silicon vertex detector assembly and mechanics

Energy Technology Data Exchange (ETDEWEB)

Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, Ti.; Baroncelli, To. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S., E-mail: stefano.bettarini@pi.infn.it [Dipartimento di Fisica, Università di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Università di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); and others

2017-02-11

The Belle II experiment at the asymmetric SuperKEKB collider in Japan will operate at an instantaneous luminosity approximately 50 times greater than its predecessor (Belle). The central feature of the experiment is a vertex detector comprising two layers of pixelated silicon detectors (PXD) and four layers of double-sided silicon microstrip detectors (SVD). One of the key measurements for Belle II is CP violation asymmetry in the decays of beauty and charm hadrons, which hinges on a precise charged-track vertex determination and low-momentum track measurement. Towards this goal, a proper assembly of the SVD components with precise alignment ought to be performed and the geometrical tolerances should be checked to fall within the design limits. We present an overview of the assembly procedure that is being followed, which includes the precision gluing of the SVD module components, wire-bonding of the various electrical components, and precision 3D coordinate measurements of the final SVD modules. Finally, some results from the latest test-beam are reported.

The ALICE silicon pixel detector front-end and read-out electronics

CERN Document Server

Kluge, A

2006-01-01

The ALICE silicon pixel detector (SPD) comprises the two innermost barrel layers of the ALICE inner tracker system. The SPD includes 120 half staves each of which consists of a linear array of 10 ALICE pixel chips bump bonded to two silicon sensors. Each pixel chip contains 8192 active cells, so the total number of pixel cells in the SPD is ≈107. The tight material budget and the limitation in physical dimensions required by the detector design introduce new challenges for the integration of the on-detector electronics. An essential part of the half stave is a low-mass multi-layer flex that carries power, ground, and signals to the pixel chips. Each half stave is read out using a multi-chip module (MCM). The MCM contains three radiation hard ASICs and an 800 Mbit/s custom developed optical link for the data transfer between the detector and the control room. The detector components are less than 3 mm thick. The production of the half-staves and MCMs is currently under way. Test results as well as on overvie...

An electromagnetic calorimeter for the silicon detector concept

Indian Academy of Sciences (India)

sampling layers – twenty of thickness 5/7X0, followed by ten of thickness 10/7X0. The silicon detectors dominate the cost of our design, so we use simple .... understanding of the cross talk, we are continuing to work on a quantitative model.

Diagnostic x-ray spectra measurements using a silicon surface barrier detector

International Nuclear Information System (INIS)

Pani, R.; Laitano, R.F.

1987-01-01

A silicon surface barrier detector having a low efficiency for x-ray is used to analyse diagnostic x-ray spectra. This characteristic is advantageous in overcoming experimental problems caused by high fluence rates typical of diagnostic x-ray beams. The pulse height distribution obtained with silicon surface barrier detectors is very different from the true photon spectra because of the presence of escaped Compton photons and the fact that detection efficiency falls abruptly when photon energy increases. A detailed analysis of the spurious effects involved in detection is made by a Monte Carlo method. A stripping procedure is described for implementation on a personal computer. The validity of this method is tested by comparison with experimental results obtained with a Ge detector. The spectra obtained with the Si detector are in fairly good agreement with the analogous spectra measured with a Ge detector. The advantages of using Si as opposed to Ge detectors in x-ray spectrometry are: its simplicity of use, its greater economy for use in routine diagnostic x-ray spectroscopy and the possibility that the stripping procedure can be implemented on a personal computer. (author)

Test beam results from the prototype L3 silicon microvertex detector

International Nuclear Information System (INIS)

Adam, A.; Adriani, O.; Ahlen, S.

1993-11-01

We report test beam results on the overall system performance of two modules of the L3 Silicon Microvertex Detector exposed to a 50 GeV pion beam. Each module consists of two AC coupled double-sided silicon strip detectors equipped with VLSI readout electronics. The associated data acquisition system comprises an 8 bit FADC, an optical data transmission circuit, a specialized data reduction processor and a synchronization module. A spatial resolution of 7.5 μm and 14 μm for the two coordinates and a detection efficiency in excess of 99% are measured. (orig.)

Works of art investigation with silicon drift detectors

CERN Document Server

Leutenegger, P; Fiorini, C; Strüder, L; Kemmer, J; Lechner, P; Sciuti, S; Cesareo, R

2000-01-01

The X-ray fluorescence (XRF) spectroscopy analysis is a non-destructive technique widely used in archeometry to investigate the chemical composition of pigments, metal alloys and stones for restoration and historical investigation. The classical detection systems for archeometrical investigations utilize cryogenic detectors, like Si(Li) and HPGe, characterized by a satisfactory energy resolution (of the order of 140 eV FWHM at 6 keV). However, the requirements of liquid N sub 2 drastically limit the portability of such systems, limiting the possibility of making measurements 'on the field'. Recently new silicon PIN diodes Peltier cooled were introduced, allowing the construction of portable instrumentation. However, their energy resolution (of the order of 250 eV FWHM at 6 keV) results in some cases unsatisfactory (for instance in the identification of light elements). Both the requirements of portability and good energy resolution are fulfilled by the silicon drift detector (SDD). The SDD, cooled by a Peltie...

Assembly of an endcap of the ATLAS silicon strip detector at NIKHEF, Amsterdam.

CERN Multimedia

Ginter, P

2005-01-01

Assembly of an endcap of the ATLAS silicon strip detector (SCT) at NIKHEF, Amsterdam. Technicians are mounting the power distribution cables on the cylinder that houses nine disks with silicon sensors.

Fabrication and characterization of surface barrier detector from commercial silicon substrate

International Nuclear Information System (INIS)

Costa, Fabio Eduardo da; Silva, Julio Batista Rodrigues da

2015-01-01

This work used 5 silicon substrates, n-type with resistivity between 500-20,000 Ω.cm, with 12 mm diameter and 1 mm thickness, from Wacker - Chemitronic, Germany. To produce the surface barrier detectors, the substrates were first cleaned, then, they were etched with HNO 3 solution. After this, a deposition of suitable materials on the crystal was made, to produce the desired population inversion of the crystal characteristics. The substrates received a 10 mm diameter gold contact in one of the surfaces and a 5 mm diameter aluminum in the other. The curves I x V and the energy spectra for 28 keV and 59 keV, for each of the produced detectors, were measured. From the 5 substrates, 4 of them resulted in detectors and one did not present even diode characteristics. The results showed that the procedures used are suitable to produce detectors with this type of silicon substrates. (author)

Silicon drift detectors with on-chip electronics for x-ray spectroscopy.

Science.gov (United States)

Fiorini, C; Longoni, A; Hartmann, R; Lechner, P; Strüder, L

1997-01-01

The silicon drift detector (SDD) is a semiconductor device based on high resistivity silicon fully depleted through junctions implanted on both sides of the semiconductor wafer. The electrons generated by the ionizing radiation are driven by means of a suitable electric field from the point of interaction toward a collecting anode of small capacitance, independent of the active area of the detector. A suitably designed front-end JFET has been directly integrated on the detector chip close to the anode region, in order to obtain a nearly ideal capacitive matching between detector and transistor and to minimize the stray capacitances of the connections. This feature allows it to reach high energy resolution also at high count rates and near room temperature. The present work describes the structure and the performance of SDDs specially designed for high resolution spectroscopy with soft x rays at high detection rate. Experimental results of SDDs used in spectroscopy applications are also reported.

Charge collection in silicon strip detectors

International Nuclear Information System (INIS)

Kraner, H.W.; Beuttenmuller, R.; Ludlam, T.; Hanson, A.L.; Jones, K.W.; Radeka, V.; Heijne, E.H.M.

1982-11-01

The use of position sensitive silicon detectors as very high resolution tracking devices in high energy physics experiments has been a subject of intense development over the past few years. Typical applications call for the detection of minimum ionizing particles with position measurement accuracy of 10 μm in each detector plane. The most straightforward detector geometry is that in which one of the collecting electrodes is subdivided into closely spaced strips, giving a high degree of segmentation in one coordinate. Each strip may be read out as a separate detection element, or, alternatively, resistive and/or capacitive coupling between adjacent strips may be exploited to interpolate the position via charge division measrurements. With readout techniques that couple several strips, the numer of readout channels can, in principle, be reduced by large factors without sacrificing the intrinsic position accuracy. The testing of individual strip properties and charge division between strips has been carried out with minimum ionizing particles or beams for the most part except in one case which used alphs particless scans. This paper describes the use of a highly collimated MeV proton beam for studies of the position sensing properties of representative one dimensional strip detectors

Building blocks for future detectors: Silicon test masses and 1550 nm laser light

International Nuclear Information System (INIS)

Schnabel, R; Britzger, M; Burmeister, O; Danzmann, K; Duck, J; Eberle, T; Friedrich, D; Luck, H; Mehmet, M; Steinlechner, S; Willke, B; Brueckner, F; Nawrodt, R

2010-01-01

Current interferometric gravitational wave detectors use the combination of quasi-monochromatic, continuous-wave laser light at 1064 nm and fused silica test masses at room temperature. Detectors of the third generation, such as the Einstein-Telescope, will involve a considerable sensitivity increase. The combination of 1550 nm laser radiation and crystalline silicon test masses at low temperatures might be important ingredients in order to achieve the sensitivity goal. Here we compare some properties of the fused silica and silicon test mass materials relevant for decreasing the thermal noise in future detectors as well as the recent technology achievements in the preparation of laser radiation at 1064 nm and 1550 nm relevant for decreasing the quantum noise. We conclude that silicon test masses and 1550 nm laser light have the potential to form the future building blocks of gravitational wave detection.

Status of the Silicon Strip Detector at CMS

CERN Document Server

Simonis, H J

2008-01-01

The CMS Tracker is the world's largest silicon detector. It has only recently been moved underground and installed in the 4T solenoid. Prior to this there has been an intensive testing on the surface, which confirms that the detector system fully meets the design specifications. Irradiation studies with the sensor material shows that the system will survive for at least 10 years in the harsh radiation environment prevailing within the Tracker volume. The planning phase for SLHC as the successor of LHC, with a ten times higher luminosity at the same energy has already begun. First R\\&D studies for more robust detector materials and a new Tracker layout have started.

Calibration and alignment of the CMS silicon tracking detector

International Nuclear Information System (INIS)

Stoye, M.

2007-07-01

The Large Hadron Collider (LHC) will dominate the high energy physics program in the coming decade. The discovery of the standard model Higgs boson and the discovery of super-symmetric particles are within the reach at the energy scale explored by the LHC. However, the high luminosity and the high energy of the colliding protons lead to challenging demands on the detectors. The hostile radiation environment requires irradiation hard detectors, where the innermost subdetectors, consisting of silicon modules, are most affected. This thesis is devoted to the calibration and alignment of the silicon tracking detector. Electron test beam data, taken at DESY, have been used to investigate the performance of detector modules which previously were irradiated with protons up to a dose expected after 10 years of operation. The irradiated sensors turned out to be still better than required. The performance of the inner tracking systems will be dominated by the degree to which the positions of the sensors can be determined. Only a track based alignment procedure can reach the required precision. Such an alignment procedure is a major challenge given that about 50000 geometry constants need to be measured. Making use of the novel χ 2 minimization program Millepede II an alignment strategy has been developed in which all detector components are aligned simultaneously, as many sources of information as possible are used, and all correlations between the position parameters of the detectors are taken into account. Utilizing simulated data, a proof of concept of the alignment strategy is shown. (orig.)

Calibration and alignment of the CMS silicon tracking detector

Energy Technology Data Exchange (ETDEWEB)

Stoye, M.

2007-07-15

The Large Hadron Collider (LHC) will dominate the high energy physics program in the coming decade. The discovery of the standard model Higgs boson and the discovery of super-symmetric particles are within the reach at the energy scale explored by the LHC. However, the high luminosity and the high energy of the colliding protons lead to challenging demands on the detectors. The hostile radiation environment requires irradiation hard detectors, where the innermost subdetectors, consisting of silicon modules, are most affected. This thesis is devoted to the calibration and alignment of the silicon tracking detector. Electron test beam data, taken at DESY, have been used to investigate the performance of detector modules which previously were irradiated with protons up to a dose expected after 10 years of operation. The irradiated sensors turned out to be still better than required. The performance of the inner tracking systems will be dominated by the degree to which the positions of the sensors can be determined. Only a track based alignment procedure can reach the required precision. Such an alignment procedure is a major challenge given that about 50000 geometry constants need to be measured. Making use of the novel {chi}{sup 2} minimization program Millepede II an alignment strategy has been developed in which all detector components are aligned simultaneously, as many sources of information as possible are used, and all correlations between the position parameters of the detectors are taken into account. Utilizing simulated data, a proof of concept of the alignment strategy is shown. (orig.)

Validity of spherical approximations of initial charge cloud shape in silicon detectors

International Nuclear Information System (INIS)

Xu Cheng; Danielsson, Mats; Bornefalk, Hans

2011-01-01

Spherical approximation has been used extensively in low-energy X-ray imaging to represent the initial charge cloud produced by photon interactions in silicon detectors, mainly because of its simplicity. However, for high-energy X-rays, where the initial charge distribution is as important as the diffusion process, the spherical approximation will not result in a realistic detector response. In this paper, we present a bubble-line model that simulates the initial charge cloud in silicon detectors for photons in the energy range of medical imaging. An initial charge cloud can be generated by sampling the center of gravity and the track size from statistical distributions derived from Monte Carlo generated tracks and by distributing a certain proportion of photon energy into a bubble (68%) and a line portion uniformly. The simulations of detector response demonstrate that the new model simulates the detector response accurately and corresponds well to Monte Carlo simulation.

Study of the effects of neutron irradiation on silicon strip detectors

International Nuclear Information System (INIS)

Giubellino, P.; Panizza, G.; Hall, G.; Sotthibandhu, S.; Ziock, H.J.; Ferguson, P.; Sommer, W.F.; Edwards, M.; Cartiglia, N.; Hubbard, B.; Leslie, J.; Pitzl, D.; O'Shaughnessy, K.; Rowe, W.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E.

1992-01-01

Silicon strip detectors and test structures were exposed to neutron fluences up to Φ=6.1x10 14 n/cm 2 , using the ISIS neutron source at the Rutherford Appleton Laboratory (UK). In this paper we report some of our results concerning the effects of displacement damage, with a comparison of devices made of silicon of different resistivity. The various samples exposed showed a very similar dependence of the leakage current on the fluence received. We studied the change of effective doping concentration, and observed a behaviour suggesting the onset of type inversion at a fluence of ∝2.0x10 13 n/cm 2 , a value which depends on the initial doping concentration. The linear increase of the depletion voltage for fluences higher than the inversion point could eventually determine the maximum fluence tolerable by silicon detectors. (orig.)

Large diameter lithium compensated silicon detectors for the NASA Advanced Composition Explorer (ACE) mission

International Nuclear Information System (INIS)

Allbritton, G.L.; Andersen, H.; Barnes, A.

1996-01-01

Fabrication of the 100 mm diameter, 3 mm thick lithium-compensated silicon, Si(Li), detectors for the Cosmic Ray Isotope Spectrometer (CRIS) instrument on board the ACE satellite required development of new float-zone silicon growing techniques, new Si(Li) fabrication procedures, and new particle beam testing sequences. These developments are discussed and results are presented that illustrate the advances made in realizing these CRIS Si(Li) detectors, which, when operational in the CRIS detector telescopes, will usher in a new generation of cosmic-ray isotope spectrometers

Charge collection properties of heavily irradiated epitaxial silicon detectors

International Nuclear Information System (INIS)

Kramberger, G.; Cindro, V.; Dolenc, I.; Fretwurst, E.; Lindstroem, G.; Mandic, I.; Mikuz, M.; Zavrtanik, M.

2005-01-01

Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75μm thicknesses (ρ=50Ωcm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10 16 cm -2 . Charge collection for minimum ionizing electrons from a 90 Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC

Charge collection properties of heavily irradiated epitaxial silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Kramberger, G. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)]. E-mail: Gregor.Kramberger@ijs.si; Cindro, V. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Dolenc, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Fretwurst, E. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Lindstroem, G. [University of Hamburg, Institut fuer Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany); Mandic, I. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Mikuz, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia); Zavrtanik, M. [Institute Jozef Stefan, Jamova 39, SI-1111 Ljubljana (Slovenia)

2005-12-01

Detectors processed on epitaxial silicon seem to be a viable solution for the extreme radiation levels in the innermost layers of tracking detectors at upgraded LHC (SLHC). A set of epitaxial pad detectors of 50 and 75{mu}m thicknesses ({rho}=50{omega}cm) was irradiated with 24GeV/c protons and reactor neutrons up to equivalent fluences of 10{sup 16}cm{sup -2}. Charge collection for minimum ionizing electrons from a {sup 90}Sr source was measured using a charge sensitive preamplifier and a 25ns shaping circuit. The dependence of collected charge on annealing time and operation temperature was studied. Results were used to predict the performance of fine pitch pixel detectors proposed for SLHC.

A monolithically integrated detector-preamplifier on high-resistivity silicon

International Nuclear Information System (INIS)

Holland, S.; Spieler, H.

1990-02-01

A monolithically integrated detector-preamplifier on high-resistivity silicon has been designed, fabricated and characterized. The detector is a fully depleted p-i-n diode and the preamplifier is implemented in a depletion-mode PMOS process which is compatible with detector processing. The amplifier is internally compensated and the measured gain-bandwidth product is 30 MHz with an input-referred noise of 15 nV/√Hz in the white noise regime. Measurements with an Am 241 radiation source yield an equivalent input noise charge of 800 electrons at 200 ns shaping time for a 1.4 mm 2 detector with on-chip amplifier in an experimental setup with substantial external pickup

A comprehensive analysis of irradiated silicon detectors at cryogenic temperatures

CERN Document Server

Santocchia, A; Hall, G; MacEvoy, B; Moscatelli, F; Passeri, D; Pignatel, Giogrio Umberto

2003-01-01

The effect of particle irradiation on high-resistivity silicon detectors has been extensively studied with the goal of engineering devices able to survive the very challenging radiation environment at the CERN Large Hadron Collider (LHC). The main aspect under investigation has been the changes observed in detector effective doping concentration (N/sub eff/). We have previously proposed a mechanism to explain the evolution of N/sub eff/, whereby charge is exchanged directly between closely-spaced defect centres in the dense terminal clusters formed by hadron irradiation. This model has been implemented in both a commercial finite-element device simulator (ISE-TCAD) and a purpose-built simulation of interdefect charge exchange. To control the risk of breakdown due to the high leakage currents foreseen during ten years of LHC operation, silicon detectors will be operated below room temperature (around -10 degrees C). This, and more general current interest in the field of cryogenic operation, has led us to inve...

Wedge silicon detectors for the inner trackering system of CMS

International Nuclear Information System (INIS)

Catacchini, E.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Meschini, M.; Parrini, G.; Pieri, M.; Wheadon, R.

1997-01-01

One ''wedge'' double sided silicon detector prototype for the CMS forward inner tracker has been tested both in laboratory and on a high energy particle beam. The results obtained indicate the most reliable solutions for the strip geometry of the junction side. Three different designs of ''wedge'' double sided detectors with different solutions for the ohmic side strip geometry are presented. (orig.)

Systematic investigation of background sources in neutron flux measurements with a proton-recoil silicon detector

Energy Technology Data Exchange (ETDEWEB)

Marini, P., E-mail: marini@cenbg.in2p3.fr [CENBG, CNRS/IN2P3-Université de Bordeaux, Chemin du Solarium B.P. 120, 33175 Gradignan (France); Mathieu, L. [CENBG, CNRS/IN2P3-Université de Bordeaux, Chemin du Solarium B.P. 120, 33175 Gradignan (France); Acosta, L. [Instituto de Física, Universidad Nacional Autónoma de México, Apartado Postal 20-364, México D.F. 01000 (Mexico); Aïche, M.; Czajkowski, S.; Jurado, B.; Tsekhanovich, I. [CENBG, CNRS/IN2P3-Université de Bordeaux, Chemin du Solarium B.P. 120, 33175 Gradignan (France)

2017-01-01

Proton-recoil detectors (PRDs), based on the well known standard H(n,p) elastic scattering cross section, are the preferred instruments to perform precise quasi-absolute neutron flux measurements above 1 MeV. The limitations of using a single silicon detector as PRD at a continuous neutron beam facility are investigated, with the aim of extending such measurements to neutron energies below 1 MeV. This requires a systematic investigation of the background sources affecting the neutron flux measurement. Experiments have been carried out at the AIFIRA facility to identify these sources. A study on the role of the silicon detector thickness on the background is presented and an energy limit on the use of a single silicon detector to achieve a neutron flux precision better than 1% is given.

Suppression of irradiation effects in gold-doped silicon detectors

International Nuclear Information System (INIS)

McPherson, M.; Sloan, T.; Jones, B.K.

1997-01-01

Two sets of silicon detectors were irradiated with 1 MeV neutrons to different fluences and then characterized. The first batch were ordinary p-i-n photodiodes fabricated from high-resistivity (400 Ω cm) silicon, while the second batch were gold-doped powder diodes fabricated from silicon material initially of low resistivity (20 Ω cm). The increase in reverse leakage current after irradiation was found to be more in the former case than in the latter. The fluence dependence of the capacitance was much more pronounced in the p-i-n diodes than in the gold-doped diodes. Furthermore, photo current generation by optical means was less in the gold doped devices. All these results suggest that gold doping in silicon somewhat suppresses the effects of neutron irradiation. (author)

A counting silicon microstrip detector for precision compton polarimetry

CERN Document Server

Doll, D W; Hillert, W; Krüger, H; Stammschroer, K; Wermes, N

2002-01-01

A detector for the detection of laser photons backscattered off an incident high-energy electron beam for precision Compton polarimetry in the 3.5 GeV electron stretcher ring ELSA at Bonn University has been developed using individual photon counting. The photon counting detector is based on a silicon microstrip detector system using dedicated ASIC chips. The produced hits by the pair converted Compton photons are accumulated rather than individually read out. A transverse profile displacement can be measured with mu m accuracy rendering a polarization measurement of the order of 1% on the time scale of 10-15 min possible.

Heavy-ion irradiation effects on passivated implanted planar silicon detectors

International Nuclear Information System (INIS)

Coster, W. de; Brijs, B.; Vandervorst, W.; Burger, P.

1992-01-01

Commercially available p + nn + passivated implanted planar silicon detectors have been shown to be very performing for standard RBS-analysis with 4 He beams. Lifetimes are found to range up till >10 9 particles. The end of lifetime occurs concurrent with internal breakdown of the detector. Inverted n + np + detectors where the junction is located well outside the damage region, are expected to be less sensitive to the radiation damage and to have a higher lifetime. In the present paper the characteristics for heavy-ion detection of both types of detector are investigated and discussed upon. (orig.)

Silicon microstrip detector development in the Institute for High Energy Physics Zeuthen, GDR

International Nuclear Information System (INIS)

Lange, W.; Nowak, W.D.; Truetzschler, K.

1990-01-01

This paper reports that in regard of the growing interest to study short living particles demanding for high resolution vertex detectors the authors started to build Si microstrip detectors. The first detector generation was characterized by a small area of silicon and a readout via printed circuit board fan out. Now they can assemble detectors with larger areas and VLSI readout. A special cleanroom has been built. Equipment and tools necessary are available. Silicon wafers and thick film hybrid circuits are fabricated under collaboration by the GDR industry. Applications of their detectors were several test-runs at CERN to calibrate the L3 time expansion chamber (TEC) and the L3 muon chambers. A 10-layer telescope is designed now and it is planned to calibrate a high resolution scintillation fiber target. Future applications will be high resolution vertex detectors, e.g. L3 upgrading (LEP, CERN) or KEDR (VEPP-5, Novosibirsk). Further investigations will concern AC coupled strip detectors (single and double sided) and pixel and/or pad detectors

Neutron irradiation effects on silicon detectors structure, electrical and mechanical characteristics

International Nuclear Information System (INIS)

Rabinovich, E.; Golan, G.; Axelevich, A.; Inberg, A.; Oksman, M.; Rosenwaks, I.; Lubarsky, G.; Seidman, A.; Croitoru, N.; Rancoita, P.G.; Rattaggi, M.

1999-01-01

Neutron irradiation effects on (p-n) and Schottky-junction silicon detectors were studied. It was shown that neutron interactions with monocrystalline silicon create specific types of microstructure defects with morphology differing according to the level of neutron fluences (Φ). The isolated dislocation loops, formed by interstitial atoms were observed in microstructure images for 10 10 ≤ Φ ≤ 10 12 n/cm 2 . A strong change in the dislocation loops density and a cluster formation was observed for Φ ≥ 10 13 n/cm 2 . A drastic silicon damage was found for fluences over 10 14 n/cm 2 . These fluences created zones enriched with all types of dislocations, covering more than 50 % of the total surface area. A mechanical fragility appeared in that fluence range in a form of microcracks. 10 14 n/cm 2 appears to be a critical value of neutron irradiation because of the radiation damage described above and because the characteristics I f -V f of silicon detectors can be differentiated from those obtained at low fluences. (A.C.)

Silicon μ-strip detectors with SVX chip readout

International Nuclear Information System (INIS)

Brueckner, W.; Dropmann, F.; Godbersen, M.; Konorov, I.; Koenigsmann, K.; Newsom, C.; Paul, S.; Povh, B.; Russ, J.; Timm, S.; Vorwalter, K.; Werding, R.

1994-01-01

A new silicon strip detector has been designed and constructed for a fixed target experiment at CERN. The system of about 30 000 channels is equipped with SVX chips and read out via a double buffer into Fastbus memory. Construction and performance during the actual data taking run are discussed. ((orig.))

Beam test of CSES silicon strip detector module

Science.gov (United States)

Zhang, Da-Li; Lu, Hong; Wang, Huan-Yu; Li, Xin-Qiao; Xu, Yan-Bing; An, Zheng-Hua; Yu, Xiao-xia; Wang, Hui; Shi, Feng; Wang, Ping; Zhao, Xiao-Yun

2017-05-01

The silicon-strip tracker of the China Seismo-Electromagnetic Satellite (CSES) consists of two double-sided silicon strip detectors (DSSDs) which provide incident particle tracking information. A low-noise analog ASIC VA140 was used in this study for DSSD signal readout. A beam test on the DSSD module was performed at the Beijing Test Beam Facility of the Beijing Electron Positron Collider (BEPC) using a 400-800 MeV/c proton beam. The pedestal analysis results, RMSE noise, gain correction, and intensity distribution of incident particles of the DSSD module are presented. Supported by the XXX Civil Space Programme

Silicon pixel R&D for the CLIC detector

CERN Document Server

AUTHOR|(SzGeCERN)674552

2017-01-01

The physics aims at the future CLIC high-energy linear $e^{+}e^{−}$ collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The main challenges are: a point resolution of a few microns, ultra-low mass (~0.2% X$_{0}$ per layer for the vertex region and ~1% X$_{0}$ per layer for the outer tracker), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ~10 ns time stamping capabilities. A highly granular all-silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints. For the vertex-detector region, hybrid pixel detectors with small pitch (25 μm) and analogue readout are explored. For the outer tra...

Development and analysis of silicon based detectors for low energy nuclear radiation

International Nuclear Information System (INIS)

Johansen, G.A.

1990-11-01

The design and assembly of a prototype silicon based detector especially for the detection of auroral X-rays is presented. The theoretical fundamentals are shown and the adoption of the detector for applications in future satellite experiments are described. 136 refs

Performance Test Results of a Single-sided Silicon Strip Detector with a Radioactive Source and a Proton Beam

International Nuclear Information System (INIS)

Ki, Y. I.; Kah, D. H.; Son, D. H.; Kang, H. D.; Kim, H. J.; Kim, H. O.; Bae, J. B.; Ryu, S.; Park, H.; Kim, K. R.

2007-01-01

Due to high intrinsic precision and high speed properties of a silicon material, the silicon detector has been used in various applications such as medical imaging detector, radiation detector, positioning detectors in space science and experimental particle physics. High technology, modern equipment, and deep expertise are required to design and fabricate good quality of silicon sensors. Only few facilities in the world can develop silicon sensors which meet requirements of sensor performances. That is one of main reasons that the silicon sensor is so expensive and it takes time to purchase the silicon sensor once it is ordered. We designed and fabricated AC-coupled single-sided silicon strip sensors and developed front-end electronics and DAQ system to read out sensor signals. The silicon strip sensors were fabricated on a 5-in. n-type silicon wafer which has an orientation, high resistivity (>5 kΩ · cm) and a thickness of 380 μm. We measured the signal-to-noise ratio (SNR) of each channel by using a radioactive source and a 45 MeV proton beam from the MC-50 cyclotron at the Korea Institute of Radiological and Medical Science (KIRAMS) in Seoul. We present the measurement results of the SNRs of the silicon strip sensor with a proton beam and radioactive sources

A silicon pixel detector with routing for external VLSI read-out

International Nuclear Information System (INIS)

Thomas, S.L.; Seller, P.

1988-07-01

A silicon pixel detector with an array of 32 by 16 hexagonal pixels has been designed and is being built on high resistivity silicon. The detector elements are reverse biased diodes consisting of p-implants in an n-type substrate and are fully depleted from the front to the back of the wafer. They are intended to measure high energy ionising particles traversing the detector. The detailed design of the pixels, their layout and method of read-out are discussed. A number of test structures have been incorporated onto the wafer to enable measurements to be made on individual pixels together with a variety of active devices. The results will give a better understanding of the operation of the pixel array, and will allow testing of computer simulations of more elaborate structures for the future. (author)

Beam test of a large area silicon drift detector

International Nuclear Information System (INIS)

Castoldi, A.; Chinnici, S.; Gatti, E.; Longoni, A.; Palma, F.; Sampietro, M.; Rehak, P.; Ballocchi, G.; Kemmer, J.; Holl, P.; Cox, P.T.; Giacomelli, P.; Vacchi, A.

1992-01-01

The results from the tests of the first large area (4 x 4 cm 2 ) planar silicon drift detector prototype in a pion beam are reported. The measured position resolution in the drift direction is (σ=40 ± 10)μm

Development of the H1 backward silicon strip detector

International Nuclear Information System (INIS)

Eick, W.; Hansen, K.; Lange, W.; Prell, S.; Zimmermann, W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Newton, A.M.; Wilburn, C.D.; Horisberger, R.; Pitzl, D.; Haynes, W.J.; Noyes, G.

1996-10-01

The development and first results are described of a silicon strip detector telescope for the HERA experiment H1 designed to measure the polar angle of deep inelastic scattered electrons at small Bjorken x and low momentum transfers Q 2 . (orig.)

Development of the H1 backward silicon strip detector

International Nuclear Information System (INIS)

Eick, W.; Hansen, K.; Lange, W.; Prell, S.; Zimmermann, W.; Bullough, M.A.; Greenwood, N.M.; Lucas, A.D.; Newton, A.M.; Wilburn, C.D.; Horisberger, R.; Pitzl, D.; Haynes, W.J.; Noyes, G.

1997-01-01

The development and first results are described of a silicon strip detector telescope for the HERA experiment H1 designed to measure the polar angle of deep inelastic scattered electrons at small Bjorken x and low momentum transfers Q 2 . (orig.)

A doublet of 3" cylindrical silicon drift detectors in the CERES/NA45 experiment

CERN Document Server

Faschingbauer, U; Baur, R; Ceretto, F; Drees, A; Fraenkel, Zeev; Fuchs, C; Gatti, E; Glässel, P; Hemberger, M; Pérez de los Heros, C; Hess, F; Holl, P; Irmscher, D; Jacob, C; Kemmer, J; Minaev, Yu I; Panebratsev, Yu A; Pfeiffer, A; Ravinovich, I; Razin, S V; Rehak, P; Sampietro, M; Schükraft, Jürgen; Shimansky, S S; Socol, E; Specht, H J; Tel-Zur, G; Tserruya, Itzhak; Ullrich, T S; Voigt, C A; Wurm, J P; Yurevich, V I

1995-01-01

We report on the performance of a doublet of 3" cylindrical silicon drift detectors installed as an upgrade of the CERES/NA45 electron pair spectrometer for the Pb-beam at the CERN SPS. The silicon detectors provide external particle tracking and background rejection of conversions and close Dalitz pairs. Results on vertex reconstruction and rejection from Pb test-run in 1994 are presented.

Characterization of a dose verification system dedicated to radiotherapy treatments based on a silicon detector multi-strips

International Nuclear Information System (INIS)

Bocca, A.; Cortes Giraldo, M. A.; Gallardo, M. I.; Espino, J. M.; Aranas, R.; Abou Haidar, Z.; Alvarez, M. A. G.; Quesada, J. M.; Vega-Leal, A. P.; Perez Neto, F. J.

2011-01-01

In this paper, we present the characterization of a silicon detector multi-strips (SSSSD: Single Sided Silicon Strip Detector), developed by the company Micron Semiconductors Ltd. for use as a verification system for radiotherapy treatments.

Electron Beam Induced Radiation Damage of the Semiconductor Radiation Detector based on Silicon

International Nuclear Information System (INIS)

Kim, Han Soo; Kim, Yong Kyun; Park, Se Hwan; Haa, Jang Ho; Kang, Sang Mook; Chung, Chong Eun; Cho, Seung Yeon; Park, Ji Hyun; Yoon, Tae Hyung

2005-01-01

A Silicon Surface Barrier (SSB) semiconductor detector which is generally used to detect a charged particle such as an alpha particle was developed. The performance of the developed SSB semiconductor detector was measured with an I-V curve and an alpha spectrum. The response for an alpha particle was measured by Pu-238 sources. A SSB semiconductor detector was irradiated firstly at 30sec, at 30μA and secondly 40sec, 40μA with a 2MeV pulsed electron beam generator in KAERI. And the electron beam induced radiation damage of a homemade SSB detector and the commercially available PIN photodiode were investigated. An annealing effect of the damaged SSB and PIN diode detector were also investigated using a Rapid Thermal Annealing (RTA). This data may assist in designing the silicon based semiconductor radiation detector when it is operated in a high radiation field such as space or a nuclear power plant

A study on the beta voltaic micro-nuclear battery based on the planar technology silicon detector

International Nuclear Information System (INIS)

Zhang Kai; He Gaokui; Huang Xiaojian; Liu Yang; Meng Xin; Hao Xiaoyong

2011-01-01

It describes briefly the beta voltaic micro-nuclear battery based on the planar technology silicon detector and radioisotope. Different sensitive area of silicon detectors are used to cooperate with 63 Ni source to buildup of beta voltaic micro-nuclear batteries. The experimental data show that the larger sensitive area the silicon detector has, the higher open circuit voltage it produces, and the open circuit voltage of single cell has reached an excellent result from 0.15 V to 0.30 V. It is possible to get high output power by series or parallel connecting the beta voltaic micro-nuclear batteries. (authors)

Two gamma dose evaluation methods for silicon semiconductor detector

International Nuclear Information System (INIS)

Chen Faguo; Jin Gen; Yang Yapeng; Xu Yuan

2011-01-01

Silicon PIN diodes have been widely used as personal and areal dosimeters because of their small volume, simplicity and real-time operation. However, because silicon is neither a tissue-equivalent nor an air-equivalent material, an intrinsic disadvantage for silicon dosimeters is that a significant over-response occurs at low-energy region, especially below 200 keV. Using a energy compensation filter to flatten the energy response is one method overcoming this disadvantage. But for dose compensation method, the estimated dose depends only on the number of the detector pulses. So a weight function method was introduced to evaluate gamma dose, which depends on pulse number as well as its amplitude. (authors)

Charged particle detectors made from thin layers of amorphous silicon

International Nuclear Information System (INIS)

Morel, J.R.

1986-05-01

A series of experiments was conducted to determine the feasibility of using hydrogenated amorphous silicon (α-Si:H) as solid state thin film charged particle detectors. 241 Am alphas were successfully detected with α-Si:H devices. The measurements and results of these experiments are presented. The problems encountered and changes in the fabrication of the detectors that may improve the performance are discussed

First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

International Nuclear Information System (INIS)

Alemi, M.; Campbell, M.; Gys, T.; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K.

2000-01-01

We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface

First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

Energy Technology Data Exchange (ETDEWEB)

Alemi, M.; Campbell, M.; Gys, T. E-mail: thierry.gys@cern.ch; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K

2000-07-11

We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface.

Hybrid Detectors for Neutrons Combining Phenyl- Polysiloxanes with 3D Silicon Detectors

International Nuclear Information System (INIS)

Dalla Palma, Matteo; Quaranta, Alberto; Collazuol, Gianmaria; Carturan, Sara; Cinausero, Marco; Gramegna, Fabiana; Marchi, Tommaso; Dalla Betta, Gian-Franco; Mendicino, Roberto; Povoli, Marco; Boscardin, Maurizio; Giacomini, Gabriele; Ronchin, Sabina; Zorzi, Nicola

2013-06-01

We report on the initial results of a research project aimed at the development hybrid detectors for fast neutrons by combining a phenyl-polysiloxane-based converter with a 3D silicon detector. To this purpose, new 3D sensor structures have been designed, fabricated and electrically tested, showing low depletion voltage and good leakage current. Moreover, the radiation detection capability of 3D sensors was tested by measuring the signals recorded from alpha particles, gamma rays, and pulsed lasers. The converter has been poured into the 3D cavities with excellent coupling, as confirmed by cross-section SEM analyses. Preliminary tests with neutrons have been carried out on the first hybrid detector prototypes at the CN accelerator of INFN LNL. The device design and technology are discussed, along with the first results from the electrical and functional characterization. (authors)

Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

CERN Document Server

Ruzin, A; Glaser, M; Lemeilleur, F; Talamonti, R; Watts, S; Zanet, A

1999-01-01

Recent results on the radiation hardness of silicon detectors fabricated on epitaxial and float zone bulk silicon enriched by various impurities, such as carbon, oxygen, tin and platinum are reported. A new methodology of measurements of electrical properties of the devices has been utilized in the experiment. It has been shown that in the case of irradiation by protons, oxygen enriched silicon has better radiation hardness than standard float zone silicon. The carbon enriched silicon detectors, on the other hand, exhibited significantly inferior radiation hardness compared to standard detectors. This study shows for the first time, a violation of the widely used normalization technique of the various particle irradiations by NIEL coefficients. The study has been carried out in the framework of the RD48 (ROSE) collaboration, which studies the radiation hardening of silicon detectors. (5 refs).

Study of the effects of neutron irradiation on silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Giubellino, P.; Panizza, G. (INFN Torino (Italy)); Hall, G.; Sotthibandhu, S. (Imperial Coll., London (United Kingdom)); Ziock, H.J.; Ferguson, P.; Sommer, W.F. (Los Alamos National Lab., NM (United States)); Edwards, M. (Rutherford Appleton Lab., Chilton (United Kingdom)); Cartiglia, N.; Hubbard, B.; Leslie, J.; Pitzl, D.; O' Shaughnessy, K.; Rowe, W.; Sadrozinski, H.F.W.; Seiden, A.; Spencer, E. (Santa Cruz Inst. for Particle Physics, Univ. California, CA (United States))

1992-05-01

Silicon strip detectors and test structures were exposed to neutron fluences up to {Phi}=6.1x10{sup 14} n/cm{sup 2}, using the ISIS neutron source at the Rutherford Appleton Laboratory (UK). In this paper we report some of our results concerning the effects of displacement damage, with a comparison of devices made of silicon of different resistivity. The various samples exposed showed a very similar dependence of the leakage current on the fluence received. We studied the change of effective doping concentration, and observed a behaviour suggesting the onset of type inversion at a fluence of {proportional to}2.0x10{sup 13} n/cm{sup 2}, a value which depends on the initial doping concentration. The linear increase of the depletion voltage for fluences higher than the inversion point could eventually determine the maximum fluence tolerable by silicon detectors. (orig.).

Silicon microstrip detectors on 6'' technology

CERN Document Server

Bölla, G; Günther, M; Martignon, G; Bacchetta, N; Bisello, D; Leonardi, G L; Lucas, T; Wilburn, C

1999-01-01

The fabrication of microstrip detectors on 4'' high-resistivity wafers that allow for a maximum workable area of about 42 cm sup 2 has been well established. Using 6'' wafers the workable area increases up to 100 cm sup 2 (more than twice the area of a 4'' wafer) allowing a larger number of detectors to be processed at the same time on the same wafer resulting in a sizable reduction of cost. After a prototyping stage, the CDF silicon tracker upgrade is now receiving final production sensors from Micron Semiconductor Ltd. The performance of double-sided single-metal small stereo angle sensors for the CDF SVXII and ISL detectors has been studied. Results include probe station measurements and test beam results. The problems encountered from prototyping to the final devices are described. A brief overview of the response of the sensors to irradiation with gamma-rays and p sup + up to a dose of 0.5 Mrad (well above the doses expected during Run II of the Tevatron) is included. (author)

Tuning of the silicon microstrip detector (SCT) digitization parameters at ATLAS

Energy Technology Data Exchange (ETDEWEB)

Vishwakarma, Akanksha [Humboldt University, Unter den Linden 6, 10099 Berlin (Germany)

2016-07-01

The increased luminosity of LHC in RUN-2 causes high radiation exposure of the ATLAS detector. This might bring about changes in the detector responses, especially of the pixel and the silicon strip detector. To study this, several digitization parameters are varied in the simulation and are analysed by comparing with data. In particular, the impact on the reconstructed cluster and track is considered. This investigation is used to optimize data-Monte Carlo agreement.

Test beam results of Silicon Drift Detector prototypes for the ALICE experiment

Energy Technology Data Exchange (ETDEWEB)

Nouais, D.; Bonvicini, V.; Busso, L.; Cerello, P.; Giubellino, P.; Gregorio, A.; Hernandez-Montoya, R.; Idzik, M.; Kolojvari, A.; Mazza, G.; Montano, L. M.; Nilsen, B.S.; Petta, C.; Randazzo, N.; Rashevsky, A.; Reito, S.; Rivetti, A.; Tosello, F.; Trzaska, W.H.; Vacchi, A

1999-08-01

We report preliminary beam test results of linear Silicon Drift Detector prototypes for the ALICE experiment. Linearity, resolution, charge transport and collection, and efficiency have been studied using a minimum ionizing particle beam for a very large area detector prototype read out with the OLA preamplifier/shaper and for another detector read out using a new transimpedance amplifier with a non linear response.

Microstructured silicon neutron detectors for security applications

International Nuclear Information System (INIS)

Esteban, S; Fleta, C; Jumilla, C; Pellegrini, G; Quirion, D; Rodriguez, J; Lozano, M; Guardiola, C

2014-01-01

In this paper we present the design and performance of a perforated thermal neutron silicon detector with a 6 LiF neutron converter. This device was manufactured within the REWARD project workplace whose aim is to develop and enhance technologies for the detection of nuclear and radiological materials. The sensor perforated structure results in a higher efficiency than that obtained with an equivalent planar sensor. The detectors were tested in a thermal neutron beam at the nuclear reactor at the Instituto Superior Técnico in Lisbon and the intrinsic detection efficiency for thermal neutrons and the gamma sensitivity were obtained. The Geant4 Monte Carlo code was used to simulate the experimental conditions, i.e. thermal neutron beam and the whole detector geometry. An intrinsic thermal neutron detection efficiency of 8.6%±0.4% with a discrimination setting of 450 keV was measured

Mathematical modeling and numerical simulation of Czochralski Crystal Growth

Energy Technology Data Exchange (ETDEWEB)

Jaervinen, J.; Nieminen, R. [Center for Scientific Computing, Espoo (Finland)

1996-12-31

A detailed mathematical model and numerical simulation tools based on the SUPG Finite Element Method for the Czochralski crystal growth has been developed. In this presentation the mathematical modeling and numerical simulation of the melt flow and the temperature distribution in a rotationally symmetric crystal growth environment is investigated. The temperature distribution and the position of the free boundary between the solid and liquid phases are solved by using the Enthalpy method. Heat inside of the Czochralski furnace is transferred by radiation, conduction and convection. The melt flow is governed by the incompressible Navier-Stokes equations coupled with the enthalpy equation. The melt flow is numerically demonstrated and the temperature distribution in the whole Czochralski furnace. (author)

Mathematical modeling and numerical simulation of Czochralski Crystal Growth

Energy Technology Data Exchange (ETDEWEB)

Jaervinen, J; Nieminen, R [Center for Scientific Computing, Espoo (Finland)

1997-12-31

A detailed mathematical model and numerical simulation tools based on the SUPG Finite Element Method for the Czochralski crystal growth has been developed. In this presentation the mathematical modeling and numerical simulation of the melt flow and the temperature distribution in a rotationally symmetric crystal growth environment is investigated. The temperature distribution and the position of the free boundary between the solid and liquid phases are solved by using the Enthalpy method. Heat inside of the Czochralski furnace is transferred by radiation, conduction and convection. The melt flow is governed by the incompressible Navier-Stokes equations coupled with the enthalpy equation. The melt flow is numerically demonstrated and the temperature distribution in the whole Czochralski furnace. (author)

Amorphous silicon detectors in positron emission tomography

Energy Technology Data Exchange (ETDEWEB)

Conti, M. (Istituto Nazionale di Fisica Nucleare, Pisa (Italy) Lawrence Berkeley Lab., CA (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

1989-12-01

The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

Amorphous silicon detectors in positron emission tomography

International Nuclear Information System (INIS)

Conti, M.; Perez-Mendez, V.

1989-12-01

The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters ε 2 τ's are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs

Evaluation of FOXFET biased ac-coupled silicon strip detector prototypes for CDF SVX upgrade

Energy Technology Data Exchange (ETDEWEB)

Laakso, M. (Fermi National Accelerator Lab., Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland))

1992-03-01

Silicon microstrip detectors for high-precision charged particle position measurements have been used in nuclear and particle physics for years. The detectors have evolved from simple surface barrier strip detectors with metal strips to highly complicated double-sided AC-coupled junction detectors. The feature of AC-coupling the readout electrodes from the diode strips necessitates the manufacture of a separate biasing structure for the strips, which comprises a common bias line together with a means for preventing the signal from one strip from spreading to its neighbors through the bias line. The obvious solution to this is to bias the strips through individual high value resistors. These resistors can be integrated on the detector wafer by depositing a layer of resistive polycrystalline silicon and patterning it to form the individual resistors. To circumvent the extra processing step required for polysilicon resistor processing and the rather difficult tuning of the process to obtain uniform and high enough resistance values throughout the large detector area, alternative methods for strip biasing have been devised. These include the usage of electron accumulation layer resistance for N{sup +}{minus} strips or the usage of the phenomenon known as the punch-through effect for P{sup +}{minus} strips. In this paper we present measurement results about the operation and radiation resistance of detectors with a punch-through effect based biasing structure known as a Field OXide Field-Effect Transistor (FOXFET), and present a model describing the FOXFET behavior. The studied detectors were prototypes for detectors to be used in the CDF silicon vertex detector upgrade.

Evaluation of FOXFET biased ac-coupled silicon strip detector prototypes for CDF SVX upgrade

International Nuclear Information System (INIS)

Laakso, M.

1992-03-01

Silicon microstrip detectors for high-precision charged particle position measurements have been used in nuclear and particle physics for years. The detectors have evolved from simple surface barrier strip detectors with metal strips to highly complicated double-sided AC-coupled junction detectors. The feature of AC-coupling the readout electrodes from the diode strips necessitates the manufacture of a separate biasing structure for the strips, which comprises a common bias line together with a means for preventing the signal from one strip from spreading to its neighbors through the bias line. The obvious solution to this is to bias the strips through individual high value resistors. These resistors can be integrated on the detector wafer by depositing a layer of resistive polycrystalline silicon and patterning it to form the individual resistors. To circumvent the extra processing step required for polysilicon resistor processing and the rather difficult tuning of the process to obtain uniform and high enough resistance values throughout the large detector area, alternative methods for strip biasing have been devised. These include the usage of electron accumulation layer resistance for N + - strips or the usage of the phenomenon known as the punch-through effect for P + - strips. In this paper we present measurement results about the operation and radiation resistance of detectors with a punch-through effect based biasing structure known as a Field OXide Field-Effect Transistor (FOXFET), and present a model describing the FOXFET behavior. The studied detectors were prototypes for detectors to be used in the CDF silicon vertex detector upgrade

The effect of polycrystalline rod insertion in a low Prandtl number melt for continuous Czochralski system

Science.gov (United States)

Nam, Phil-Ouk; Son, Seung-Suk; Yi, Kyung-Woo

2010-04-01

The increased wafer size results in greater instabilities and complexities within the silicon melt, and melt flow control through the application of magnetic fields is not adequate to stabilize the melt. Therefore, continuous Czochralski systems are being studied as a solution to these issues, with higher productivity and no change in size. The purpose of this study is to observe the effects of polycrystalline rod insertion on the melt for a continuous Czochralski system. In order to observe flow patterns within the melt both broadly and specifically, we employ experimentation on a model system in tandem with numerical simulation. The rod insertion do not significantly affect near the crystal edge. In the melt height from 0.14 to 0.09 m, an asymmetric temperature distributions arise when the crystal rotation is counterclockwise direction (-15 rpm) and the crucible rotation is clockwise direction (3 rpm). The axis-symmetrical temperature distribution is formed at lower melt heights (0.08 and 0.07 m). When the melt height is 0.07 m, the axis-symmetric temperature distribution is maintained even after the rod insertion.

Low-temperature technique of thin silicon ion implanted epitaxial detectors

Energy Technology Data Exchange (ETDEWEB)

Kordyasz, A.J.; Bednarek, A. [Warsaw University, Heavy Ion Laboratory, Warsaw (Poland); Le Neindre, N.; Bougault, R.; Lopez, O.; Merrer, Y.; Vient, E. [Universite de Caen, LPC, IN2P3-CNRS, ENSICAEN, Caen-Cedex (France); Parlog, M. [Universite de Caen, LPC, IN2P3-CNRS, ENSICAEN, Caen-Cedex (France); ' ' Horia Hulubei' ' National Institute of Physics and Nuclear Engineering (IFIN-HH), Bucharest Magurele (Romania); Casini, G.; Poggi, G.; Bini, M.; Valdre, S.; Scarlini, E.; Pasquali, G.; Pastore, G.; Piantelli, S.; Stefanini, A.; Olmi, A.; Barlini, S. [INFN Firenze, Sesto Fiorentino (Italy); Universita di Firenze, Sesto Fiorentino (Firenze) (Italy); Kowalczyk, M. [Warsaw University, Heavy Ion Laboratory, Warsaw (Poland); University of Warsaw, Institute of Experimental Physics, Warsaw (Poland); Frankland, J.D.; Bonnet, E.; Chbihi, A.; Gruyer, D. [CEA et IN2P3-CNRS, GANIL, Caen-Cedex 05 (France); Borderie, B.; Ademard, G.; Edelbruck, P.; Rivet, M.F.; Salomon, F. [IN2P3-CNRS, Institut de Physique Nucleaire, Orsay-Cedex (France); Boiano, A.; Rosato, E.; Meoli, A.; Ordine, A.; Spadaccini, G.; Tortone, G.; Vigilante, M.; Vanzanella, E. [Universita di Napoli ' ' Federico II' ' , Dipartimento di Scienze Fisiche, Napoli (Italy); INFN, Napoli (Italy); Bruno, M.; Serra, S.; Morelli, L.; Guerzoni, M. [INFN, Bologna (Italy); Universita di Bologna, Bologna (Italy); Alba, R.; Santonocito, D.; Maiolino, C. [INFN, Catania (Italy); Universita di Catania, LNS, Catania (Italy); Cinausero, M.; Gramegna, F.; Marchi, T. [INFN LNL Legnaro, Legnaro (Padova) (Italy); Kozik, T.; Kulig, P.; Twarog, T.; Sosin, Z. [Jagiellonian University, Cracow (Poland); Gasior, K.; Grzeszczuk, A.; Zipper, W. [University of Silesia, Silesian University, Katowice (Poland); Sarnecki, J.; Lipinski, D.; Wodzinska, H.; Brzozowski, A.; Teodorczyk, M.; Gajewski, M.; Zagojski, A.; Krzyzak, K. [Institute of Electronic Materials Technology, Warsaw (Poland); Tarasiuk, K.J. [University of Warsaw, Institute of Experimental Physics, Warsaw (Poland); Khabanowa, Z. [Faculty of Physics, Warsaw University of Technology, Warsaw (Poland); Kordyasz, L. [Warsaw University of Technology, Faculty of Mechatronics, Institute of Mikromechanics and Photonics, Department of Design of Precision Devices, Warsaw (Poland)

2015-02-01

A new technique of large-area thin ion implanted silicon detectors has been developed within the R and D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B{sup +} ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from {sup 241}Am (left angle E{sub α} right angle = 5.5 MeV). Preliminary tests on the first thin detector (area ∼ 20 x 20 mm{sup 2}) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction {sup 84}Kr (E = 35 A MeV) + {sup 112}Sn. The ΔE - E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge. (orig.)

Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

International Nuclear Information System (INIS)

Li, Zheng; Kraner, H.W.; Verbitskaya, E.; Eremin, V.; Ivanov, A.; Rubinelli, F.A.; Fonash, S.J.

1992-02-01

Distributions of the A-center (oxygen-vacancy) in neutron silicon detectors have been studied using Deep Level Transient Spectroscopy. A-centers have been found to be nearly uniformly distributed in the silicon water depth for medium resistivity (0.1 - 0.2 kΩ-cm) silicon detectors. A positive filling pulse was needed to detect the A-centers in high resistivity (>4 kΩ-cm) silicon detectors, and this effect was found to be dependent on the oxidation temperature. A discussion of this effect is presented. 16 refs

Gamma Large Area Silicon Telescope (GLAST): Applying silicon strip detector technology to the detection of gamma rays in space

International Nuclear Information System (INIS)

Atwood, W.B.

1993-06-01

The recent discoveries and excitement generated by space satellite experiment EGRET (presently operating on Compton Gamma Ray Observatory -- CGRO) have prompted an investigation into modern detector technologies for the next generation space based gamma ray telescopes. The GLAST proposal is based on silicon strip detectors as the open-quotes technology of choiceclose quotes for space application: no consumables, no gas volume, robust (versus fragile), long lived, and self triggerable. The GLAST detector basically has two components: a tracking module preceding a calorimeter. The tracking module has planes of crossed strip (x,y) 300 μm pitch silicon detectors coupled to a thin radiator to measure the coordinates of converted electron-positron pairs. The gap between the layers (∼5 cm) provides a lever arm for track fitting resulting in an angular resolution of <0.1 degree at high energy. The status of this R ampersand D effort is discussed including details on triggering the instrument, the organization of the detector electronics and readout, and work on computer simulations to model this instrument

Beam Test Results for Single- and Double-Sided Silicon Detector Prototypes of the CMS Central Detector

CERN Document Server

Adriani, O

1997-01-01

We report the results of two beam tests performed in July and September 1995 at CERN using silicon microstrip detectors of various types: single sided, double sided with small angle stereo strips, double sided with orthogonal strips, double sided with pads. For the read-out electronics use was made of Preshape32, Premux128 and VA1 chips. The signal to noise ratio and the resolution of the detectors was studied for different incident angles of the incoming particles and for different values of the detector bias voltage. The goal of these tests was to check and improve the performances of the prototypes for the CMS Central Detector.

Use of silicon microstrip detectors in medical diagnostic x-rays

International Nuclear Information System (INIS)

Cabal Rodriguez, Ana Ester

2004-11-01

This work presents the development and characterization of a single photon counting system based on silicon microstrip detectors, used in High Energy Physics experiments, and on low noise multichannel readout electronics. The thesis evaluates the feasibility of dual energy X-ray imaging with silicon microstrip detectors to be applied on medical diagnosis. Dual energy mammographic and angiographic experimental tests have been performed using the developed counting systems proto types, properly phantoms and quasi-monochromatic X ray beams, obtained on a compact dichromatic source based on a conventional X-ray tube and a mosaic crystal. A Monte Carlo simulation of the performance of the experimental setup for dual X-ray imaging has also been carried out using MCNP-4C transport code. We obtained good agreement between MCNP results and the experimental data. (Author)

Cross-talk studies on FPCB of double-sided silicon micro-strip detector

International Nuclear Information System (INIS)

Yang, Lei; Li, Zhankui; Li, Haixia; Wang, Pengfei; Wang, Zhusheng; Chen, Cuihong; Liu, Fengqiong; Li, Ronghua; Wang, Xiuhua; Li, Chunyan; Zu, Kailing

2014-01-01

Double-sided silicon micro-strip detector's parameters and a test method and the results of cross-talk of FPCB are given in this abstract. In addition, the value of our detector's readout signal has little relation to FPCB's cross-talk.

Radiation hardness of silicon detectors - a challenge from high-energy physics

CERN Document Server

Lindström, G; Fretwurst, E

1999-01-01

An overview of the radiation-damage-induced problems connected with the application of silicon particle detectors in future high-energy physics experiments is given. Problems arising from the expected hadron fluences are summarized and the use of the nonionizing energy loss for normalization of bulk damage is explained. The present knowledge on the deterioration effects caused by irradiation is described leading to an appropriate modeling. Examples are given for a correlation between the change in the macroscopic performance parameters and effects to be seen on the microscopic level by defect analysis. Finally possible ways are out-lined for improving the radiation tolerance of silicon detectors either by operational conditions, process technology or defect engineering.

Quality Tests of Double-Sided Silicon Strip Detectors

CERN Document Server

Cambon, T; CERN. Geneva; Fintz, P; Guillaume, G; Jundt, F; Kuhn, C; Lutz, Jean Robert; Pagès, P; Pozdniakov, S; Rami, F; Sparavec, K; Dulinski, W; Arnold, L

1997-01-01

The quality of the SiO2 insulator (AC coupling between metal and implanted strips) of double-sided Silicon strip detectors has been studied by using a probe station. Some tests performed on 23 wafers are described and the results are discussed. Remark This note seems to cause problems with ghostview but it can be printed without any problem.

Electronics and mechanics for the Silicon Vertex Detector of the Belle II experiment

Energy Technology Data Exchange (ETDEWEB)

Irmler, C; Bergauer, T; Friedl, M; Gfall, I; Valentan, M, E-mail: irmler@hephy.oeaw.ac.a [Institute of High Energy Physics, Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria)

2010-12-15

A major upgrade of the KEK-B factory (Tsukuba, Japan), aiming at a peak luminosity of 8 x 10{sup 35}cm{sup -2}s{sup -1}, which is 40 times the present value, is foreseen until 2014. Consequently an upgrade of the Belle detector and in particular its Silicon Vertex Detector (SVD) is required. We will introduce the concept and prototypes of the full readout chain of the Belle II SVD. Its APV25 based front-end utilizes the Origami chip-on-sensor concept, while the back-end VME system provides online data processing as well as hit time finding using FPGAs. Furthermore, the design of the double-sided silicon detectors and the mechanics will be discussed.

Simulation of a silicon neutron detector coated with TiB2 absorber

International Nuclear Information System (INIS)

Krapohl, D; Nilsson, H-E; Petersson, S; Slavicek, T; Thungström, G; Pospisil, S

2012-01-01

Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB 2 ) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB 2 converter layer and optimize the clean room process.

Segmented scintillation detectors with silicon photomultiplier readout for measuring antiproton annihilations

CERN Document Server

Sótér, A.; Kobayashi, T.; Barna, D.; Horváth, D.; Hori, M.

2014-01-01

The Atomic Spectroscopy and Collisions Using Slow Antiprotons (ASACUSA) experiment at the Antiproton Decelerator (AD) facility of CERN constructed segmented scintillators to detect and track the charged pions which emerge from antiproton annihilations in a future superconducting radiofrequency Paul trap for antiprotons. A system of 541 cast and extruded scintillator bars were arranged in 11 detector modules which provided a spatial resolution of 17 mm. Green wavelength-shifting fibers were embedded in the scintillators, and read out by silicon photomultipliers which had a sensitive area of 1 x 1 mm^2. The photoelectron yields of various scintillator configurations were measured using a negative pion beam of momentum p ~ 1 GeV/c. Various fibers and silicon photomultipliers, fiber end terminations, and couplings between the fibers and scintillators were compared. The detectors were also tested using the antiproton beam of the AD. Nonlinear effects due to the saturation of the silicon photomultiplier were seen a...

Characterisation of silicon detectors for the LHCb Vertex Locator Upgrade

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00401830

The LHCb Vertex Locator must be upgraded in the next long shutdown of the LHC, starting at the end of 2018. This is due to the increased occupancy. The current silicon strip detector is being upgraded to a silicon pixel detector. The prototype sensors for this detector were tested thoroughly before a final design will be chosen. The testing was done with the Timepix3 Telescope, which was commissioned in the summer of 2014. The charge collected by the sensors and efficiency of the sensors were investigated. After maximum irradiation, of 8$\\times$10$^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, the sensors must have a most probable value of collected charge of 6000 electrons before 1000 V or breakdown, whichever comes first. The sensors must also have a high efficiency at maximum irradiation of 8$\\times$10$^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. All tested sensors reach these criteria. All sensors reach 6000 electrons between 600 V and 800 V and have a cluster finding efficiency of over 95\\% at the respective voltages. Overall, a 15...

Test beam results of silicon drift detector prototypes for the ALICE experiment

CERN Document Server

Nouais, D; Busso, L; Cerello, P G; Giubellino, P; Gregorio, A; Hernández-Montoya, R; Idzik, M; Kolojvari, A A; Mazza, G; Montaño-Zetina, L M; Nilsson, B S; Petta, C; Randazzo, N; Rashevsky, A; Reito, S; Rivetti, A; Tosello, F; Trzaska, W H; Vacchi, A

1999-01-01

We report preliminary beam test results of linear silicon drift detector prototypes for the ALICE experiment. Linearity, resolution, charge transport and collection, and efficiency have been studied using a minimum ionizing particle beam for a very large area detector prototype read out with the OLA preamplifier/shaper and for another detector read out using a new transimpedance amplifier with a nonlinear response. (14 refs).

Pulse shape method for the Chimera silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Pagano, A.; Arena, N.; Cardella, G.; D' Andrea, M.; Filippo, E. de; Fichera, F.; Giudice, N.; Guardone, N.; Grimaldi, A.; Nicotra, D.; Papa, M.; Pirrone, S.; Politi, G.; Rapicavoli, C.; Rizza, G.; Russotto, P.; Sacca, G.; Urso, S.; Lanzano, G. [Catania Univ., INFN Catania and Dipartimento di Fisica e Astronomia (Italy); Alderighi, M.; Sechi, G. [INFN Milano and Istituto di Fisica Cosmica CNR, Milano (Italy); Amorini, F.; Anzalone, A.; Cali, C.; Campagna, V.; Cavallaro, S.; Di Stefano, A.; Giustolisi, F.; La Guidara, E.; Lanzalone, G.; Maiolino, C.; Porto, F.; Rizzo, F.; Salamone, S. [Catania Univ., INFN-LNS and Dipartimento di Fisica e Astronomia (Italy); Auditore, L.; Trifiro, A.; Trimarchi, M. [Messina Univ., INFN and Dipartimento di Fisica (Italy); Bassini, R.; Boiano, C.; Guazzoni, P.; Russo, S.; Sassi, M.; Zetta, L. [Milano Univ., INFN Milano and Dipartimento di Fisica (Italy); Blicharska, J.; Grzeszczuk, A. [Silesia Univ., Institute of Physics, Katowice (Poland); Chatterjee, M.B. [Saha Institute Of Nuclear Physics, Kolkata (India); Geraci, E.; Zipper, W. [Bologna Univ., INFN Bologna and Dipartimento di Fisica (Italy); Rosato, E.; Vigilante, M. [Napoli Univ., INFN and Dipartimento di Fisica (Italy); Schroder, W.U.; T-ke, J. [Rochester Univ., Dept. of Chemistry, Rochester, N.Y. (United States)

2003-07-01

Since January 2003, the 4{pi} CHIMERA (Charged Heavy Ions Mass and Energy Resolving Array) detector in its full configuration has successfully been operated at the 'Catania Laboratori Nazionali del Sud' (LNS) accelerator facility. The detector has been used with a variety of beams from the Superconducting Cyclotron in heavy-ion reaction studies at Fermi bombarding energies. Future experiments with a focus on isospin physics at Fermi energies, planned for both primary and less intense secondary particle beams, suggest the development of new and more versatile experimental particle identification methods. Recent achievements in implementing specific pulse shape particle identification methods for CHIMERA silicon detectors are reported. They suggest an upgrade of the present charge and mass identification capability of CHIMERA by a simple extension of the method. (authors)

Strip interpolation in silicon and germanium strip detectors

International Nuclear Information System (INIS)

Wulf, E. A.; Phlips, B. F.; Johnson, W. N.; Kurfess, J. D.; Lister, C. J.; Kondev, F.; Physics; Naval Research Lab.

2004-01-01

The position resolution of double-sided strip detectors is limited by the strip pitch and a reduction in strip pitch necessitates more electronics. Improved position resolution would improve the imaging capabilities of Compton telescopes and PET detectors. Digitizing the preamplifier waveform yields more information than can be extracted with regular shaping electronics. In addition to the energy, depth of interaction, and which strip was hit, the digitized preamplifier signals can locate the interaction position to less than the strip pitch of the detector by looking at induced signals in neighboring strips. This allows the position of the interaction to be interpolated in three dimensions and improve the imaging capabilities of the system. In a 2 mm thick silicon strip detector with a strip pitch of 0.891 mm, strip interpolation located the interaction of 356 keV gamma rays to 0.3 mm FWHM. In a 2 cm thick germanium detector with a strip pitch of 5 mm, strip interpolation of 356 keV gamma rays yielded a position resolution of 1.5 mm FWHM

Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors

International Nuclear Information System (INIS)