LSA Large Area Silicon Sheet Task Continuous Czochralski Process Development

Science.gov (United States)

Rea, S. N.

1979-01-01

A commercial Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a small, in-situ premelter with attendant silicon storage and transport mechanisms. Using a vertical, cylindrical graphite heater containing a small fused quartz test tube linear from which the molten silicon flowed out the bottom, approximately 83 cm of nominal 5 cm diamter crystal was grown with continuous melt addition furnished by the test tube premelter. High perfection crystal was not obtained, however, due primarily to particulate contamination of the melt. A major contributor to the particulate problem was severe silicon oxide buildup on the premelter which would ultimately drop into the primary melt. Elimination of this oxide buildup will require extensive study and experimentation and the ultimate success of continuous Czochralski depends on a successful solution to this problem. Economically, the continuous Czochralski meets near-term cost goals for silicon sheet material.

The fluid flow of Czochralski melt under the electromagnetic field

OpenAIRE

加藤, 拓哉; 二條久保, 裕; 岩本, 光生; 齋藤, 晋一; 赤松, 正人; 尾添, 紘之; Takuya, Katoh; Yuu, Nijoukubo; Mitsuo, Iwamoto; Shinichi, Saitoh; Masato, Akamatsu; Hiroyuki, Ozoe; 大分大院; 大分大工; 大分大工

2009-01-01

The silicon single crystal is use for the semiconductor device and it is mainly manufactured by the Czochralski crystal growing method. Under the Cz method, the forced convection and natural convection caused by the crystal rotation and the temperature difference between the crystal and crucible. In traditional system, the melt convection is controlled by the heater power, the crystal and crucible rotation. We apply Lorentz force to control the melt convection in this study, the Lorentz force...

The intrinsic gettering in neutron irradiation Czochralski-silicon

CERN Document Server

Li Yang Xian; Niu Ping Juan; Liu Cai Chi; Xu Yue Sheng; Yang Deren; Que Duan Lin

2002-01-01

The intrinsic gettering in neutron irradiated Czochralski-silicon is studied. The result shows that a denuded zone at the surface of the neutron irradiated Czochralski-silicon wafer may be formed through one-step short-time annealing. The width of the denuded zone is dependent on the annealing temperature and the dose of neutron irradiation, while it is irrelated to the annealing time in case the denuded zone is formed. The authors conclude that the interaction between the defects induced by neutron irradiation and the oxygen in the silicon accelerates the oxygen precipitation in the bulk, and becomes the dominating factor of the quick formation of intrinsic gettering. It makes the effect of thermal history as the secondary factor

Numerical Simulation of Yttrium Aluminum Garnet(YAG) Single Crystal Growth by Resistance Heating Czochralski(CZ) Method

Energy Technology Data Exchange (ETDEWEB)

You, Myeong Hyeon; Cha, Pil Ryung [Kookmin University, Seoul (Korea, Republic of)

2017-01-15

Yttrium Aluminum Garnet (YAG) single crystal has received much attention as the high power solid-state laser’s key component in industrial and medical applications. Various growth methods have been proposed, and currently the induction-heating Czochralski (IHCZ) growth method is mainly used to grow YAG single crystal. Due to the intrinsic properties of the IHCZ method, however, the solid/liquid interface has a downward convex shape and a sharp tip at the center, which causes a core defect and reduces productivity. To produce YAG single crystals with both excellent quality and higher yield, it is essential to control the core defects. In this study, using computer simulations we demonstrate that the resistance-heating CZ (RHCZ) method may avoid a downward convex interface and produce core defect free YAG single crystal. We studied the effects of various design parameters on the interface shape and found that there was an optimum combination of design parameter and operating conditions that produced a flat solid-liquid interface.

Future application of Czochralski crystal pulling for silicon

Science.gov (United States)

Matlcok, J. H.

1985-08-01

Czochralski (Cz) crystal pulling has been the predominant method used for preparing silicon single crystal for the past twenty years. The fundamental technology used has changed little. However, great strides have been made in learning how to make the crystals bigger and of better quality at ever increasing productivity rates. Currently charge sizes of 50 kg of polycrystal silicon are being used for production and crystals up to ten inches in diameter have been grown without major difficulty. The largest material actually being processed in silicon wafer form is 150 mm (6 inches) in diameter. Growing of crystals in a magnetic field has proved to be particularly useful for microscopic impurity control. Major developments in past years on equipment for Cz crystal pulling have included the automatic growth control of the diameter as well as the starting core of the crystal, the use of magnetic fields and around the crystal puller to supress convection, various recharging schemes for dopant control and the use of continuous liquid feed in the crystal puller. The latter, while far from being a reliable production process, is ideal in concept for major improvement in Cz crystal pulling. The Czochralski process will maintain its dominance of silicon crystal production for many years.

Application of the Proper Orthogonal Decomposition to Turbulent Czochralski Convective Flows

International Nuclear Information System (INIS)

Rahal, S; Cerisier, P; Azuma, H

2007-01-01

The aim of this work is to study the general aspects of the convective flow instabilities in a simulated Czochralski system. We considered the influence of the buoyancy and crystal rotation. Velocity fields, obtained by an ultrasonic technique, the corresponding 2D Fourier spectra and a correlation function, have been used. Steady, quasi-periodic and turbulent flows, are successively recognized, as the Reynolds number was increased, for a fixed Rayleigh number. The orthogonal decomposition method was applied and the numbers of modes, involved in the dynamics of turbulent flows, calculated. As far as we know, this method has been used for the first time to study the Czochralski convective flows. This method provides also information on the most important modes and allows simple theoretical models to be established. The large rotation rates of the crystal were found to stabilize the flow, and conversely the temperature gradients destabilize the flow. Indeed, the increase of the rotation effects reduces the number of involved modes and oscillations, and conversely, as expected, the increase of the buoyancy effects induces more modes to be involved in the dynamics. Thus, the flow oscillations can be reduced either by increasing the crystal rotation rate to the adequate value, as shown in this study or by imposing a magnetic field

KBr-Li Br and KBr-LiBr doped with Ti mixed single crystal by Czochralski method and glow curve studies

International Nuclear Information System (INIS)

Faripour, H.; Faripour, N.

2003-01-01

Mixed-single Crystals: pure KBr-LiBr and KBr-LiBr with Ti dopant were grown by Czochralski method. Because of difference between lattice parameters of KBr and LiBr, the growth speed of crystals were relatively low, and they were annealed in a special temperature condition providing some cleavages. They were exposed by β radiation and the glow curve was analysed for each crystal. Analysing of glow curve, showed that Ti impurity has been the curves of main peak curve appearance temperature decreasing

Characterization of Czochralski Silicon Detectors

OpenAIRE

Luukka, Panja-Riina; Haerkoenen, Jaakko

2012-01-01

This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

Characterization of Czochralski silicon detectors

OpenAIRE

Luukka, Panja-Riina

2006-01-01

This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

Full-scale experiments on solid-pellets feed continuous Czochralski growth of silicon crystals

Science.gov (United States)

Anselmo, A.; Koziol, J.; Prasad, V.

1996-06-01

Two long-term solid-pellets feed continuous Czochralski growth experiments were performed in an industrial Czochralski crystal puller as an extension to our previous work [7]. The goals of these experiments were to examine how polysilicon pellets would melt in a standard Cz system, to discover the thermal effects the pellets would have on the overall melt, and to find if pellet addition could be an effective melt replenishment technique. These experiments demonstrate that the quality of the melt for the CCz growth is based heavily on the surface temperature of the melt. A novel characterization method ("impact severity") is developed to characterize the quality of the CCz melt. Stable feed rate and melt conditions were achieved for three different pull rates. These experiments demonstrate that the process is technically feasible, and can be retrofitted to the existing industrial systems. Several critical issues that need to be addressed to develop a successful CCz process are also discussed.

Numerical analysis of transport phenomena in Y-Ba-Cu-O melt during growth of superconducting crystal Y123 by Czochralski method

Science.gov (United States)

Szmyd, J. S.; Suzuki, K.

2003-10-01

In 1993, at the Superconductivity Research Laboratory (SRL), International Superconductivity Technology Centre (ISTEC), in Tokyo, continuous growth of large single crystals of YBa 2Cu 3O 7- x (Y123) was achieved by the application of a modified Czochralski method. This paper presents the numerical computations of the flow, thermal and Y concentration fields in the Ba-Cu-O melt for Y123 single crystal growth by this modified method. The finite volume method was used to calculate the fluid flow, heat transfer and yttrium distribution in the melt with staggered numerical grid. The flow in the melt was modelled as an incompressible Newtonian and Boussinesque fluid. Calculations are presented for a combined flow regime of buoyancy-driven natural convection and crystal-rotation-driven forced convection.

Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth. II - Processing strategies

Science.gov (United States)

Derby, J. J.; Brown, R. A.

1986-01-01

The pseudosteady-state heat transfer model developed in a previous paper is augmented with constraints for constant crystal radius and melt/solid interface deflection. Combinations of growth rate, and crucible and bottom-heater temperatures are tested as processing parameters for satisfying the constrained thermal-capillary problem over a range of melt volumes corresponding to the sequence occuring during the batchwise Czochralski growth of a small-diameter silicon crystal. The applicability of each processing strategy is judged by the range of existence of the solution, in terms of melt volume and the values of the axial and radial temperature gradients in the crystal.

Distribution of Al and in impurities along homogeneous Ge-Si crystals grown by the Czochralski method using Si feeding rod

Science.gov (United States)

Kyazimova, V. K.; Alekperov, A. I.; Zakhrabekova, Z. M.; Azhdarov, G. Kh.

2014-05-01

A distribution of Al and In impurities in Ge1 - x Si x crystals (0 ≤ x ≤ 0.3) grown by a modified Czochralski method (with continuous feeding of melt using a Si rod) have been studied experimentally and theoretically. Experimental Al and In concentrations along homogeneous crystals have been determined from Hall measurements. The problem of Al and In impurity distribution in homogeneous Ge-Si single crystals grown in the same way is solved within the Pfann approximation. A set of dependences of Al and In concentrations on the crystal length obtained within this approximation demonstrates a good correspondence between the experimental and theoretical data.

Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

International Nuclear Information System (INIS)

Bruzzi, M.; Bisello, D.; Borrello, L.; Borchi, E.; Boscardin, M.; Candelori, A.; Creanza, D.; Dalla Betta, G.-F.; DePalma, M.; Dittongo, S.; Focardi, E.; Khomenkov, V.; Litovchenko, A.; Macchiolo, A.; Manna, N.; Menichelli, D.; Messineo, A.; Miglio, S.; Petasecca, M.; Piemonte, C.; Pignatel, G.U.; Radicci, V.; Ronchin, S.; Scaringella, M.; Segneri, G.; Sentenac, D.; Tosi, C.; Zorzi, N.

2005-01-01

We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4x10 14 cm -2 the characterisation of n-on-p and p-on-n MCz Si sensors with the C-V method show a decrease of the full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role of thermal donors in Czochralski Si. No evidence of thermal donor activation was observed in n-type MCz Si detectors if contact sintering was performed at a temperature lower than 380 deg. C and the final passivation oxide was omitted

Modeling of dislocation dynamics in germanium Czochralski growth

Science.gov (United States)

Artemyev, V. V.; Smirnov, A. D.; Kalaev, V. V.; Mamedov, V. M.; Sidko, A. P.; Podkopaev, O. I.; Kravtsova, E. D.; Shimansky, A. F.

2017-06-01

Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in growth processes. Dislocation density is one of the most important parameters defining the quality of germanium crystal. In this paper, we have performed experimental study of dislocation density during 4-in. germanium crystal growth using the Czochralski method and comprehensive unsteady modeling of the same crystal growth processes, taking into account global heat transfer, melt flow and melt/crystal interface shape evolution. Thermal stresses in the crystal and their relaxation with generation of dislocations within the Alexander-Haasen model have been calculated simultaneously with crystallization dynamics. Comparison to experimental data showed reasonable agreement for the temperature, interface shape and dislocation density in the crystal between calculation and experiment.

LSSA large area silicon sheet task continuous Czochralski process development

Science.gov (United States)

Rea, S. N.

1978-01-01

A Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a premelter to provide molten silicon flow into the primary crucible. The basic furnace is operational and several trial crystals were grown in the batch mode. Numerous premelter configurations were tested both in laboratory-scale equipment as well as in the actual furnace. The best arrangement tested to date is a vertical, cylindrical graphite heater containing small fused silicon test tube liner in which the incoming silicon is melted and flows into the primary crucible. Economic modeling of the continuous Czochralski process indicates that for 10 cm diameter crystal, 100 kg furnace runs of four or five crystals each are near-optimal. Costs tend to asymptote at the 100 kg level so little additional cost improvement occurs at larger runs. For these conditions, crystal cost in equivalent wafer area of around $20/sq m exclusive of polysilicon and slicing was obtained.

Control and homogenization of oxygen distribution in Si crystals by the novel technique: electromagnetic Czochralski method (EMCZ)

Science.gov (United States)

Watanabe, Masahito; Eguchi, Minoru; Hibiya, Taketoshi

1999-07-01

A novel method for control and homogenization oxygen distribution in silicon crystals by using electromagnetic force (EMF) to rotate the melt without crucible rotation has been developed. We call it electromagnetic Czochralski method. An EMF in the azimuthal direction is generated in the melt by the interaction between an electric current through the melt in the radial direction and a vertical magnetic field. (B). The rotation rate (ωm) of the silicon melt is continuously changed from 0 to over 105 rpm under I equals 0 to 8 A and B equals 0 to 0.1 T. Thirty-mm-diameter silicon single crystals free of dislocations could be grown under several conditions. The oxygen concentration in the crystals was continuously changed from 1 X 1017 to 1 X 1018 atoms/cm3 with increase of melt rotation by electromagnetic force. The homogeneous oxygen distributions in the radial directions were achieved. The continuous change of oxygen concentration and the homogenization of oxygen distribution along the radial direction are attributed to the control of the diffusion-boundary-layer at both the melt/crucible and crystal/melt by forced flow due to the EMF. This new method would be useful for growth of the large-diameter silicon crystals with a homogeneous distribution of oxygen.

Role of crucible partition in improving Czochralski melt conditions

Science.gov (United States)

Jafri, I. H.; Prasad, V.; Anselmo, A. P.; Gupta, K. P.

1995-09-01

Many of the inhomogeneities and defects in the crystal grown from a pool of melt are because of the inherent unsteady growth kinetics and flow instabilities of the process. A scaled up version of the Czochralski process induces oscillatory and turbulent conditions in the melt, thereby resulting in the production of non-uniform silicon crystals. This numerical study reveals that a crucible partition shorter than the melt height can significantly improve the melt conditions. The obstruction at the bottom of the crucible is helpful but the variations in heat flux and flow patterns remain random. However, when the obstruction is introduced at the top of the melt, the flow conditions become much more desirable and oscillations are greatly suppressed. It is also found that a full-melt height partition or a double-crucible may not be a good choice. An optimal size of the blockage and its location to produce the most desirable process conditions will depend on the growth parameters including the melt height and the crucible diameter. These findings should be particularly useful in designing a solid polysilicon pellets-feed continuous Czochralski process for Si crystals.

Das Stefan-Problem bei der Kristallzucht nach Czochralski

OpenAIRE

Kopetsch, H.

1987-01-01

The shape of the crystal-melt interface in Czochralski crystal growth may strongly influence the quality of the grown crystal. Thus a numerical algorithm has been developed which allows us to study the dynamics of this interface subject to various growth conditions. Especially the hydrodynamics in the melt is taken into account. Mathematically, a moving boundary problem (Stefan problem) has to be solved along with the flow and temperature field in melt and crystal which is treated by the meth...

Cost of Czochralski wafers as a function of diameter

Science.gov (United States)

Leipold, M. H.; Radics, C.; Kachare, A.

1980-02-01

The impact of diameter in the range of 10 to 15 cm on the cost of wafers sliced from Czochralski ingots was analyzed. Increasing silicon waste and decreasing ingot cost with increasing ingot size were estimated along with projected costs. Results indicate a small but continuous decrease in sheet cost with increasing ingot size in this size range. Sheet costs including silicon are projected to be $50 to $60/sq m (1980 $) depending upon technique used.

Diffuse X-ray scattering near the Bragg reflection of P-doped Czochralski silicon

International Nuclear Information System (INIS)

Stojanoff, V.; Pimentel, C.A.F.

1983-01-01

Bragg line profile and high resolution diffuse X-ray scattering measurements around the (400) reciprocal lattice point of dislocation-free Czochralski Si single crystals P-doped have shown defects of interstitial nature with typical size about 1000 A. (Author) [pt

Infrared characterization of some oxygen-related defects in Czochralski silicon

International Nuclear Information System (INIS)

Hallberg, T.

1993-01-01

This thesis is based on the work made at Linkoeping University at the Department of Physics and Measurement Technology. It is divided into two parts. The first part is a short introduction to defects in silicon, Fourier transform infrared spectroscopy as well as some physics involved in semiconductor crystals. The second part consists of two papers: Enhanced oxygen precipitation in electron irradiated silicon. Annealing of electron irradiated antimony-doped Czochralski silicon

Calculations of shape and stability of menisci in Czochralski growth with tables to determine meniscus heights, maximum heights and capillary constants

International Nuclear Information System (INIS)

Uelhoff, W.; Mika, K.

1975-05-01

The shape and stability of menisci occurring during Czochralski growth have been studied by means of numerical methods for the case of the free surface. The existence of minimal joining angles is shown, beyond which the growing crystal will separate from the melt. The dependence of the interface height on the joining angle for different crystal diameters was calculated. The maximum stable heights and the corresponding joining angles were determined as a function of crystal diameter. A method for measuring the capillary constant of the melt during Czochralski growth is proposed. The results are compared with known analytical approximations. Limitations of the applications caused by a finite crucible radius or low g values are pointed out. For practical use the following functions have been tabulated: 1) meniscus height in dependence on joining angle and crystal radius, 2) the radius-height-ratio in dependence on radius and angle for the calculation of the capillary constant, 3) the maximum stable height and the corresponding growth angle as a function of crystal radius. (orig.) [de

Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

International Nuclear Information System (INIS)

Slugen, V.; Harmatha, L.; Tapajna, M.; Ballo, P.; Pisecny, P.; Sik, J.; Koegel, G.; Krsjak, V.

2006-01-01

Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping

Hydrogen diffusion at moderate temperatures in p-type Czochralski silicon

International Nuclear Information System (INIS)

Huang, Y.L.; Ma, Y.; Job, R.; Ulyashin, A.G.

2004-01-01

In plasma-hydrogenated p-type Czochralski silicon, rapid thermal donor (TD) formation is achieved, resulting from the catalytic support of hydrogen. The n-type counter doping by TD leads to a p-n junction formation. A simple method for the indirect determination of the diffusivity of hydrogen via applying the spreading resistance probe measurements is presented. Hydrogen diffusion in silicon during both plasma hydrogenation and post-hydrogenation annealing is investigated. The impact of the hydrogenation duration, annealing temperature, and resistivity of the silicon wafers on the hydrogen diffusion is discussed. Diffusivities of hydrogen are determined in the temperature range 270-450 deg. C. The activation energy for the hydrogen diffusion is deduced to be 1.23 eV. The diffusion of hydrogen is interpreted within the framework of a trap-limited diffusion mechanism. Oxygen and hydrogen are found to be the main traps

Czochralski growth of gallium indium antimonide alloy crystals

Energy Technology Data Exchange (ETDEWEB)

Tsaur, S.C.

1998-02-01

Attempts were made to grow alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb by the conventional Czochralski process. A transparent furnace was used, with hydrogen purging through the chamber during crystal growth. Single crystal seeds up to about 2 to 5 mole% InSb were grown from seeds of 1 to 2 mole% InSb, which were grown from essentially pure GaSb seeds of the [111] direction. Single crystals were grown with InSb rising from about 2 to 6 mole% at the seed ends to about 14 to 23 mole% InSb at the finish ends. A floating-crucible technique that had been effective in reducing segregation in doped crystals, was used to reduce segregation in Czochralski growth of alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb. Crystals close to the targeted composition of 1 mole% InSb were grown. However, difficulties were encountered in reaching higher targeted InSb concentrations. Crystals about 2 mole% were grown when 4 mole% was targeted. It was observed that mixing occurred between the melts rendering the compositions of the melts; and, hence, the resultant crystal unpredictable. The higher density of the growth melt than that of the replenishing melt could have triggered thermosolutal convection to cause such mixing. It was also observed that the floating crucible stuck to the outer crucible when the liquidus temperature of the replenishing melt was significantly higher than that of the growth melt. The homogeneous Ga{sub 1{minus}x}In{sub x}Sb single crystals were grown successfully by a pressure-differential technique. By separating a quartz tube into an upper chamber for crystal growth and a lower chamber for replenishing. The melts were connected by a capillary tube to suppress mixing between them. A constant pressure differential was maintained between the chambers to keep the growth melt up in the growth chamber. The method was first tested with a low temperature alloy Bi{sub 1{minus}x}Sb{sub x}. Single crystals of Ga{sub 1{minus}x}In{sub x}Sb were grown with uniform

YbNi{sub 4}P{sub 2}. Single crystal growth by the Czochralski method and high-field magnetization measurements

Energy Technology Data Exchange (ETDEWEB)

Kliemt, Kristin; Krellner, Cornelius [Goethe-University, Frankfurt (Germany); Foerster, Tobias [HLD, Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Brando, Manuel [MPI for Chemical Physics of Solids, Dresden (Germany)

2016-07-01

We have investigated a new generation of YbNi{sub 4}P{sub 2} single crystals that were grown from a levitating melt by the Czochralski method. With T{sub C}= 0.17 K, this ferromagnetic material has the lowest Curie temperature ever observed among stoichiometric compounds. A quantum critical point occurs in the substitution series YbNi{sub 4}(P{sub 1-x}As{sub x}){sub 2} at x ∼ 0.1. The hybridization between localized f-electrons and the conduction electrons leads to a Fermi-liquid ground state with narrow bands and strongly enhanced effective electronic masses (heavy fermion system, Kondo temperature 8 K). An external magnetic field can split the bands, deform the Fermi surface and simultaneously suppress the Kondo interaction. If such a deformation changes the topology, it is called a Lifshitz transition. Previous thermodynamic and electrical transport studies have found indications for Lifshitz transitions in this Kondo lattice system. We report on results of high-field magnetization measurements at low temperature to further investigate the putative Lifshitz transitions in YbNi{sub 4}P{sub 2}.

LSA Large Area Silicon Sheet Task Continuous Liquid Feed Czochralski Growth

Science.gov (United States)

Fiegl, G.

1979-01-01

A process for the continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells was studied. Continuous growth is the growth of 100 Kg of single silicon crystals, 10 cm in diameter, from one container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a melt-down system and a liquid transfer mechanism, with associated automatic feedback controls was developed. Elements of the transfer system were further developed and tested during actual transfer runs. Considerable simplification of the heating element of the transfer tube was achieved. Accuracy and reliability of the temperature sensor, which is part of the power input control system for the transfer tube, was improved. Electrical and thermal effectiveness were increased while assembly of the transfer tube system was further simplified.

Computational analysis of heat transfer, thermal stress and dislocation density during resistively Czochralski growth of germanium single crystal

Science.gov (United States)

Tavakoli, Mohammad Hossein; Renani, Elahe Kabiri; Honarmandnia, Mohtaram; Ezheiyan, Mahdi

2018-02-01

In this paper, a set of numerical simulations of fluid flow, temperature gradient, thermal stress and dislocation density for a Czochralski setup used to grow IR optical-grade Ge single crystal have been done for different stages of the growth process. A two-dimensional steady state finite element method has been applied for all calculations. The obtained numerical results reveal that the thermal field, thermal stress and dislocation structure are mainly dependent on the crystal height, heat radiation and gas flow in the growth system.

Charge collection measurements with p-type Magnetic Czochralski silicon single pad detectors

International Nuclear Information System (INIS)

Tosi, C.; Bruzzi, M.; Macchiolo, A.; Scaringella, M.; Petterson, M.K.; Sadrozinski, H.F.-W.; Betancourt, C.; Manna, N.; Creanza, D.; Boscardin, M.; Piemonte, C.; Zorzi, N.; Borrello, L.; Messineo, A.

2007-01-01

The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1 MeV neutron equivalent fluence of 1x10 15 cm -2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements

Defects in Czochralski-grown silicon crystals investigated by positron annihilation

Energy Technology Data Exchange (ETDEWEB)

Ikari, Atsushi; Kawakami, Kazuto; Haga, Hiroyo [Nippon Steel Corp., Sagamihara, Kanagawa (Japan). Electronics Research Labs.; Uedono, Akira; Wei, Long; Kawano, Takao; Tanigawa, Shoichiro

1994-10-01

Positron lifetime and Doppler broadening experiments were performed on Czochralski-grown silicon crystals. A monoenergetic positron beam was also used to measure the diffusion length of positrons in the wafer. From the measurements, it was observed that the value of diffusion length of positrons decreased at the region where microdefects were formed during the crystal growth process. It was also found that the line shape parameter S decreased and the lifetime of positrons increased at the region. These results can be attributed to the annihilation of positrons trapped by vacancy oxygen complexes which are formed in association with the microdefects. (author).

Structural characteristics and physical properties of diortho(pyro)silicate crystals of lanthanides yttrium and scandium grown by the Czochralski technique

Energy Technology Data Exchange (ETDEWEB)

Anan' eva, G.V.; Karapetyan, V.E.; Korovkin, A.M.; Merkulyaeva, T.I.; Peschanskaya, I.A.; Savinova, I.P.; Feofilov, P.P. (Gosudarstvennyj Opticheskij Inst., Leningrad (USSR))

1982-03-01

Optically uniform monocrystals of diortho (pyro) silicates of lanthanides, yttrium, and scandium were grown by the Czochralski technique. Four structural types of Ln/sub 2/(Si/sub 2/O/sub 7/) crystals were determined by the roentgenographic method. The presence of structural subgroups was also supported by the method of spectroscopic probes. Structural parameters were determined and data on certain physical properties (fusion temperature, density, refractive indices, transparency) of investigated crystals were presented. The generation of induced emission at lambda=1.057 ..mu..m was obtained in La/sub 2/(Si/sub 2/O/sub 7/)-Nd/sup 3 +/ crystal.

Nonlinear resonance ultrasonic vibrations in Czochralski-silicon wafers

Science.gov (United States)

Ostapenko, S.; Tarasov, I.

2000-04-01

A resonance effect of generation of subharmonic acoustic vibrations is observed in as-grown, oxidized, and epitaxial silicon wafers. Ultrasonic vibrations were generated into a standard 200 mm Czochralski-silicon (Cz-Si) wafer using a circular ultrasound transducer with major frequency of the radial vibrations at about 26 kHz. By tuning frequency (f) of the transducer within a resonance curve, we observed a generation of intense f/2 subharmonic acoustic mode assigned as a "whistle." The whistle mode has a threshold amplitude behavior and narrow frequency band. The whistle is attributed to a nonlinear acoustic vibration of a silicon plate. It is demonstrated that characteristics of the whistle mode are sensitive to internal stress and can be used for quality control and in-line diagnostics of oxidized and epitaxial Cz-Si wafers.

Solidification interface shape control in a continuous Czochralski silicon growth system

Science.gov (United States)

Wang, Chenlei; Zhang, Hui; Wang, Tihu; Zheng, Lili

2006-01-01

In a continuous Czochralski (CCZ) growth system with a shallow and replenished melt proposed earlier, large-diameter crystals may be grown at a high pull rate and reduced melt convection. The proposed system consists of two heaters. In this paper, the relationship between the solidification interface and the power levels is established. An interface control algorithm is developed to achieve the desired interface shape by adjusting the power level of the bottom heater. The control algorithm is incorporated into an existing process model, and the efficiency of the control algorithm is tested.

A continuous Czochralski silicon crystal growth system

Science.gov (United States)

Wang, C.; Zhang, H.; Wang, T. H.; Ciszek, T. F.

2003-03-01

Demand for large silicon wafers has driven the growth of silicon crystals from 200 to 300 mm in diameter. With the increasing silicon ingot sizes, melt volume has grown dramatically. Melt flow becomes more turbulent as melt height and volume increase. To suppress turbulent flow in a large silicon melt, a new Czochralski (CZ) growth furnace has been designed that has a shallow melt. In this new design, a crucible consists of a shallow growth compartment in the center and a deep feeding compartment around the periphery. Two compartments are connected with a narrow annular channel. A long crystal may be continuously grown by feeding silicon pellets into the dedicated feeding compartment. We use our numerical model to simulate temperature distribution and velocity field in a conventional 200-mm CZ crystal growth system and also in the new shallow crucible CZ system. By comparison, advantages and disadvantages of the proposed system are observed, operating conditions are determined, and the new system is improved.

Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth

Science.gov (United States)

Wang, T.; Ciszek, T. F.

2006-01-10

In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

The effect of polycrystalline rod insertion in a low Prandtl number melt for continuous Czochralski system

Science.gov (United States)

Nam, Phil-Ouk; Son, Seung-Suk; Yi, Kyung-Woo

2010-04-01

The increased wafer size results in greater instabilities and complexities within the silicon melt, and melt flow control through the application of magnetic fields is not adequate to stabilize the melt. Therefore, continuous Czochralski systems are being studied as a solution to these issues, with higher productivity and no change in size. The purpose of this study is to observe the effects of polycrystalline rod insertion on the melt for a continuous Czochralski system. In order to observe flow patterns within the melt both broadly and specifically, we employ experimentation on a model system in tandem with numerical simulation. The rod insertion do not significantly affect near the crystal edge. In the melt height from 0.14 to 0.09 m, an asymmetric temperature distributions arise when the crystal rotation is counterclockwise direction (-15 rpm) and the crucible rotation is clockwise direction (3 rpm). The axis-symmetrical temperature distribution is formed at lower melt heights (0.08 and 0.07 m). When the melt height is 0.07 m, the axis-symmetric temperature distribution is maintained even after the rod insertion.

Dynamic global model of oxide Czochralski process with weighing control

Science.gov (United States)

Mamedov, V. M.; Vasiliev, M. G.; Yuferev, V. S.

2011-03-01

A dynamic model of oxide Czochralski growth with weighing control has been developed for the first time. A time-dependent approach is used for the calculation of temperature fields in different parts of a crystallization set-up and convection patterns in a melt, while internal radiation in crystal is considered in a quasi-steady approximation. A special algorithm is developed for the calculation of displacement of a triple point and simulation of a crystal surface formation. To calculate variations in the heat generation, a model of weighing control with a commonly used PID regulator is applied. As an example, simulation of the growth process of gallium-gadolinium garnet (GGG) crystals starting from the stage of seeding is performed.

Lifetime degradation of n-type Czochralski silicon after hydrogenation

Science.gov (United States)

Vaqueiro-Contreras, M.; Markevich, V. P.; Mullins, J.; Halsall, M. P.; Murin, L. I.; Falster, R.; Binns, J.; Coutinho, J.; Peaker, A. R.

2018-04-01

Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys. Status Solidi RRL 11, 1700133 (2017)] that hydrogenation of n-type silicon slices containing relatively large concentrations of carbon and oxygen impurity atoms {[Cs] ≥ 1 × 1016 cm-3 and [Oi] ≥ 1017 cm-3} can produce a family of C-O-H defects, which act as powerful recombination centres reducing the minority carrier lifetime. In this work, evidence of the silicon's lifetime deterioration after hydrogen injection from SiNx coating, which is widely used in solar cell manufacturing, has been obtained from microwave photoconductance decay measurements. We have characterised the hydrogenation induced deep level defects in n-type Czochralski-grown Si samples through a series of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), and high-resolution Laplace DLTS/MCTS measurements. It has been found that along with the hydrogen-related hole traps, H1 and H2, in the lower half of the gap reported by us previously, hydrogenation gives rise to two electron traps, E1 and E2, in the upper half of the gap. The activation energies for electron emission from the E1 and E2 trap levels have been determined as 0.12, and 0.14 eV, respectively. We argue that the E1/H1 and E2/H2 pairs of electron/hole traps are related to two energy levels of two complexes, each incorporating carbon, oxygen, and hydrogen atoms. Our results show that the detrimental effect of the C-O-H defects on the minority carrier lifetime in n-type Si:O + C materials can be very significant, and the carbon concentration in Czochralski-grown silicon is a key parameter in the formation of the recombination centers.

Digital Control of the Czochralski Growth of Gallium Arsenide-Controller Software Reference Manual

Science.gov (United States)

1987-07-15

once a parameter was changed. (2) Despite of the fact that there are analog controllers on the market which feature a high degree of automation...single-zone heater is in use.) - 4 - Kfc ^&S^^ p IS’ K: i 1. Digital Control of Czochralski GaAs Crystal Growth (2) Four tachometers which are...34 if either the overlay name or the program version loaded with the overlay do not match the expected data. (It is important not to mix modules

Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

Science.gov (United States)

Yoon, Yohan; Yan, Yixin; Ostrom, Nels P.; Kim, Jinwoo; Rozgonyi, George

2012-11-01

Continuous-Czochralski (c-Cz) crystal growth has been suggested as a viable technique for the fabrication of photovoltaic Si wafers due to its low resistivity variation of any dopant, independent of segregation, compared to conventional Cz. In order to eliminate light induced degradation due to boron-oxygen traps in conventional p-type silicon wafers, gallium doped wafers have been grown by c-Cz method and investigated using four point probe, deep level transient spectroscopy (DLTS), and microwave-photoconductance decay. Iron-gallium related electrically active defects were identified using DLTS as the main lifetime killers responsible for reduced non-uniform lifetimes in radial and axial positions of the c-Cz silicon ingot. A direct correlation between minority carrier lifetime and the concentration of electrically active Fe-Ga pairs was established.

LSA Large Area Silicon Sheet Task. Continuous Liquid Feed Czochralski Growth. [for solar cell fabrication

Science.gov (United States)

Fiegl, G.

1979-01-01

The design and development of equipment and processes to demonstrate continuous growth of crystals by the Czochralski method suitable for producing single silicon crystals for use in solar cells is presented. The growth of at least 150 kg of mono silicon crystal, 150 mm in diameter is continuous from one growth container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a meltdown system with a continuous solid silicon feed mechanism and a liquid transfer system, with associated automatic feedback controls is discussed. Due to the silicon monoxide build up in the furnace and its retarding effect on crystal growth the furnace conversion for operation in the low pressure range is described. Development of systems for continuous solid recharging of the meltdown chamber for various forms of poly silicon is described.

Basic theory of diameter control in Czochralski growth using the melt-weighing technique

International Nuclear Information System (INIS)

Johansen, T.H.

1986-04-01

The unconfined crystal growth in the Czochralski configuration is recognized as a process which is quite dependent upon successful control of the shape determining conditions. In the paper attention is focused on the meniscus region, and its relevance to the crystal diameter behaviour is discussed. The dynamic stability of the configuration is analyzed according to the Surek criterion. In contrast to earlier zeroth order arguments, the system is shown to be inherently stable at normal growth conditions if the thermal impedance of the meniscus is taken into account. General difficulties associated with small diameter growth are pointed out. Reference is made to various growth monitoring arrangements, and the melt-weighing method is described in detail. Assuming uniform growth with a flat interface, the exact relation between the force experienced by a weighing cell and the growth parameters during both stationary and non-stationary conditions is derived. Growth at a constant angle is analyzed, and a new procedure for deriving the crystal diameter is suggested

Numerical modeling of Czochralski growth of Li2MoO4 crystals for heat-scintillation cryogenic bolometers

Science.gov (United States)

Stelian, Carmen; Velázquez, Matias; Veber, Philippe; Ahmine, Abdelmounaim; Sand, Jean-Baptiste; Buşe, Gabriel; Cabane, Hugues; Duffar, Thierry

2018-06-01

Lithium molybdate Li2MoO4 (LMO) crystals of mass ranging between 350 and 500 g are excellent candidates to build heat-scintillation cryogenic bolometers likely to be used for the detection of rare events in astroparticle physics. In this work, numerical modeling is applied in order to investigate the Czochralski growth of Li2MoO4 crystals in an inductive furnace. The numerical model was validated by comparing the numerical predictions of the crystal-melt interface shape to experimental visualization of the growth interface. Modeling was performed for two different Czochralski furnaces that use inductive heating. The simulation of the first furnace, which was used to grow Li2MoO4 crystals of 3-4 cm in diameter, reveals non-optimal heat transfer conditions for obtaining good quality crystals. The second furnace, which will be used to grow crystals of 5 cm in diameter, was numerically optimized in order to reduce the temperature gradients in the crystal and to avoid fast crystallization of the bath at the later stages of the growth process.

Reliability of Czochralski-grown {beta}-BaB{sub 2}O{sub 4}(BBO) devices

Energy Technology Data Exchange (ETDEWEB)

Umezu, Nobuhiko; Fukui, Tatsuo; Okamoto, Tsutomu; Wada, Hiroyuki; Tatsuki, Kouichi; Kondo, Kenji; Kubota, Shigeo [Sony Corp., Tokyo (Japan)

1998-03-01

We have achieved more than 1000 hours-operation in 266 nm-continuous wave (CW), 100 mW-generation of all-solid-state-UV laser system using Czochralski (Cz)-grown {beta}-BaB{sub 2}O{sub 4}(BBO) crystal devices. Absorption of the Cz-grown crystal for e-ray at 266 nm was improved to 1%/cm, which is one-third lower than that of the crystal grown by top seeded solution growth (TSSG) method. Degradation rate of 266 nm generation, using 7 kHz repetition rate laser diode pumped Q switched Nd:YAG laser as a fundamental light source, was one order of magnitude lower than that of TSSG-crystal. Surface roughness of the crystal was better than 0.3 rms.-nm. HfO{sub 2} film with extremely high adhesion was deposited on the surfaces using reactive low voltage ion plating method. Our devices can be put to practical use in areas of photolithography, micro fabrication, material processing and ultra high density optical disk mastering. (author)

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

Czochralski growth and optical properties of Li 6Gd 1-xEu x(BO 3) 3 ( x=0-1) single crystals

Science.gov (United States)

Yavetskiy, R. P.; Dolzhenkova, E. F.; Dubovik, M. F.; Korshikova, T. I.; Tolmachev, A. V.

2005-04-01

It was shown that a continuous series of Li 6Gd 1-xEu x(BO 3) 3 solid solutions exist within the whole concentration range ( x=0-1). Li 6Gd 1-xEu x(BO 3) 3 ( x=0-0.03; 1) single crystals up to 25 mm in length and up to 20 mm in diameter have been grown by the Czochralski method. The structural perfection of the crystals has been estimated from etch patterns and XPA analysis results. The optical absorption and thermally stimulated luminescence of the grown crystals has been studied.

Oxygen microclusters in Czochralski-grown Si probed by positron annihilation

International Nuclear Information System (INIS)

Uedono, Akira; Wei Long; Tanigawa, Shoichiro; Kawano, Takao; Ikari, Atsushi; Kawakami, Kazuto; Itoh, Hisayoshi.

1994-01-01

Trapping of positrons by oxygen microclusters in Czochralski-grown Si was studied. Lifetime spectra of positrons were measured for Si specimens annealed in the temperature range between 450degC and 1000degC. Positrons were found to be trapped by oxygen microclusters, and the trapping rate of positrons into such defects increased with increasing annealing temperature. In order to investigate the clustering behaviors of oxygen atoms in more derail, vacancy-oxygen complexes, V n O m (n,m=1,2, ···), were introduced by 3MeV electron irradiation. The concentration of monovacancy-oxygen complexes VO m (m=2,3, ···) increased with increasing annealing temperature. These facts were attributed that the oxygen microclusters, O m , were introduced by annealing above 700degC. (author)

Oxygen microclusters in Czochralski-grown Si probed by positron annihilation

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Wei Long; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Kawano, Takao; Ikari, Atsushi; Kawakami, Kazuto; Itoh, Hisayoshi

1994-08-01

Trapping of positrons by oxygen microclusters in Czochralski-grown Si was studied. Lifetime spectra of positrons were measured for Si specimens annealed in the temperature range between 450degC and 1000degC. Positrons were found to be trapped by oxygen microclusters, and the trapping rate of positrons into such defects increased with increasing annealing temperature. In order to investigate the clustering behaviors of oxygen atoms in more derail, vacancy-oxygen complexes, V{sub n}O{sub m} (n,m=1,2, {center_dot}{center_dot}{center_dot}), were introduced by 3MeV electron irradiation. The concentration of monovacancy-oxygen complexes VO{sub m}(m=2,3, {center_dot}{center_dot}{center_dot}) increased with increasing annealing temperature. These facts were attributed that the oxygen microclusters, O{sub m}, were introduced by annealing above 700degC. (author).

Remarks on Prof. Michał Kokowski’s comment about the studies into the life of Prof. Jan Czochralski (in Polish

Directory of Open Access Journals (Sweden)

Paweł E. TOMASZEWSKI

2015-12-01

Full Text Available Remarks on the critical comments regarding the contents of the paper published after the presentation delivered by the biographer of Prof. Jan Czochralski. Unfortunately, Prof. Kokowski used an incorrect historical approach to such a short paper. The remarks are presented in four main points.

Scintillation properties of Zr co-doped Ce:(Gd, La)_2Si_2O_7 grown by the Czochralski process

International Nuclear Information System (INIS)

Murakami, Rikito; Kurosawa, Shunsuke; Shoji, Yasuhiro; Jary, Vitezslav; Ohashi, Yuji; Pejchal, Jan; Yokota, Yuui; Kamada, Kei; Nikl, Martin; Yoshikawa, Akira

2016-01-01

(Gd_0_._7_5,Ce_0_._0_1_5,La_0_._2_3_5)_2Si_2O_7 (Ce:La-GPS) single crystals co-doped with 0, 100, 200, 500 and 1000 ppm Zr were grown by the Czochralski process, and their scintillation properties were investigated. We investigated the co-doping effect of a stable tetravalent ion in Ce:La-GPS for the first time. The scintillation decay times in the faster component were shortened with increasing the Zr concentration. While the non-co-doped sample showed ∼63 ns day time, the Zr 100, 200, 500 and 1000 ppm co-doped samples showed ∼61, ∼59, ∼57, ∼54 ns, respectively. Additionally, light output, photon nonproportional response (PNR) and other optical properties were investigated. - Highlights: • Czochralski growth of Ce:(Gd,La)_2Si_2O_7 single crystals. • Co-doping effect of a stable tetravalent ion in Ce:(Gd,La)_2Si_2O_7 system. • Photon nonproportional response of Zr co-doped Ce:(Gd,La)_2Si_2O_7.

Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket

Science.gov (United States)

Zhao, Wenhan; Liu, Lijun

2017-01-01

The continuous-feeding Czochralski method is an effective method to reduce the cost of single crystal silicon. By promoting the crystal growth rate, the cost can be reduced further. However, more latent heat will be released at the melt-crystal interface under a high crystal growth rate. In this study, a water-cooled jacket was applied to enhance the heat transfer at the melt-crystal interface. Quasi-steady-state numerical calculation was employed to investigate the impact of the water-cooled jacket on the heat transfer at the melt-crystal interface. Latent heat released during the crystal growth process at the melt-crystal interface and absorbed during feedstock melting at the feeding zone was modeled in the simulations. The results show that, by using the water-cooled jacket, heat transfer in the growing crystal is enhanced significantly. Melt-crystal interface deflection and thermal stress increase simultaneously due to the increase of radial temperature at the melt-crystal interface. With a modified heat shield design, heat transfer at the melt-crystal interface is well controlled. The crystal growth rate can be increased by 20%.

Combined effects of crucible geometry and Marangoni convection on silicon Czochralski crystal growth

Energy Technology Data Exchange (ETDEWEB)

Mokhtari, F. [Unit of Developpement of Silicon Technologie, Algiers (Algeria); Bouabdallah, A.; Zizi, M. [LTSE Laboratory, University of Science and Technology USTHB., Babezzouar, Algiers (Algeria); Hanchi, S. [UER Mecanique/ E.M.P/ B.P, El Bahri/Alger (Algeria); Alemany, A. [Laboratoire EPM, CNRS, Grenoble (France)

2009-08-15

In order to understand the influence of crucible geometry combined with natural convection and Marangoni convection on melt flow pattern, temperature and pressure fields in silicon Czochralski crystal growth process, a set of numerical simulations was conducted. We carry out calculation enable us to determine temperature, pressure and velocity fields in function of Grashof and Marangoni numbers. The essential results show that the hemispherical geometry of crucible seems to be adapted for the growth of a good quality crystal and the pressure field is strongly affected by natural and Marangoni convection and it is more sensitive than temperature. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Denuded zone in Czochralski silicon wafer with high carbon content

International Nuclear Information System (INIS)

Chen Jiahe; Yang Deren; Ma Xiangyang; Que Duanlin

2006-01-01

The thermal stability of the denuded zone (DZ) created by high-low-high-temperature annealing in high carbon content (H[C]) and low carbon content (L[C]) Czochralski silicon (Cz-Si) has been investigated in a subsequent ramping and isothermal 1050 deg. C annealing. The tiny oxygen precipitates which might occur in the DZ were checked. It was found in the L[C] Cz-Si that the DZ shrank and the density of bulk micro-defects (BMDs) reduced with the increase of time spent at 1050 deg. C. Also, the DZs above 15 μm of thickness present in the H[C] Cz-Si wafers continuously and the density and total volume of BMDs first decreased then increased and finally decreased again during the treatments. Moreover, tiny oxygen precipitates were hardly generated inside the DZs, indicating that H[C] Cz-Si wafers could support the fabrication of integrated circuits

Denuded zone in Czochralski silicon wafer with high carbon content

Science.gov (United States)

Chen, Jiahe; Yang, Deren; Ma, Xiangyang; Que, Duanlin

2006-12-01

The thermal stability of the denuded zone (DZ) created by high-low-high-temperature annealing in high carbon content (H[C]) and low carbon content (L[C]) Czochralski silicon (Cz-Si) has been investigated in a subsequent ramping and isothermal 1050 °C annealing. The tiny oxygen precipitates which might occur in the DZ were checked. It was found in the L[C] Cz-Si that the DZ shrank and the density of bulk micro-defects (BMDs) reduced with the increase of time spent at 1050 °C. Also, the DZs above 15 µm of thickness present in the H[C] Cz-Si wafers continuously and the density and total volume of BMDs first decreased then increased and finally decreased again during the treatments. Moreover, tiny oxygen precipitates were hardly generated inside the DZs, indicating that H[C] Cz-Si wafers could support the fabrication of integrated circuits.

Oscillatory convection in low aspect ratio Czochralski melts

Science.gov (United States)

Anselmo, A.; Prasad, V.; Koziol, J.; Gupta, K. P.

1993-11-01

Modeling of the crucible in bulk crystal growth simulations as a right circular cylinder may be adequate for high aspect ratio melts but this may be unrealistic when the melt height is low. Low melt height is a unique feature of a solid feed continuous Czochralski growth process for silicon single crystals currently under investigation. At low melt heights, the crucible bottom curvature has a dampening effect on the buoyancy-induced oscillations, a source of inhomogeneities in the grown crystal. The numerical results demonstrate how the mode of convection changes from vertical wall-dominated recirculating flows to Benard convection as the aspect ratio is lowered. This phenomenon is strongly dependent on the boundary condition at the free surface of the melt, which has been generally considered to be either adiabatic or radiatively cooled. A comparison of the flow oscillations in crucibles with and without curved bottoms at aspect ratios in the range of 0.25 to 0.50, and at realistic Grashof numbers (10 7 < Gr < 10 8) illustrate that changing the shape of the crucible may be an effective means of suppressing oscillations and controlling the melt flow.

3-D time-dependent numerical model of flow patterns within a large-scale Czochralski system

Science.gov (United States)

Nam, Phil-Ouk; O, Sang-Kun; Yi, Kyung-Woo

2008-04-01

Silicon single crystals grown through the Czochralski (Cz) method have increased in size to 300 mm, resulting in the use of larger crucibles. The objective of this study is to investigate the continuous Cz method in a large crucible (800 mm), which is performed by inserting a polycrystalline silicon rod into the melt. The numerical model is based on a time-dependent and three-dimensional standard k- ɛ turbulent model using the analytical software package CFD-ACE+, version 2007. Wood's metal melt, which has a low melting point ( Tm=70 °C), was used as the modeling fluid. Crystal rotation given in the clockwise direction with rotation rates varying from 0 to 15 rpm, while the crucible was rotated counter-clockwise, with rotation rates between 0 and 3 rpm. The results show that asymmetrical phenomena of fluid flow arise as results of crystal and crucible rotation, and that these phenomena move with the passage of time. Near the crystal, the flow moves towards the crucible at the pole of the asymmetrical phenomena. Away from the poles, a vortex begins to form, which is strongly pronounced in the region between the poles.

Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

Science.gov (United States)

Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

2009-01-01

Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

Nonlinear model-based control of the Czochralski process III: Proper choice of manipulated variables and controller parameter scheduling

Science.gov (United States)

Neubert, M.; Winkler, J.

2012-12-01

This contribution continues an article series [1,2] about the nonlinear model-based control of the Czochralski crystal growth process. The key idea of the presented approach is to use a sophisticated combination of nonlinear model-based and conventional (linear) PI controllers for tracking of both, crystal radius and growth rate. Using heater power and pulling speed as manipulated variables several controller structures are possible. The present part tries to systematize the properties of the materials to be grown in order to get unambiguous decision criteria for a most profitable choice of the controller structure. For this purpose a material specific constant M called interface mobility and a more process specific constant S called system response number are introduced. While the first one summarizes important material properties like thermal conductivity and latent heat the latter one characterizes the process by evaluating the average axial thermal gradients at the phase boundary and the actual growth rate at which the crystal is grown. Furthermore these characteristic numbers are useful for establishing a scheduling strategy for the PI controller parameters in order to improve the controller performance. Finally, both numbers give a better understanding of the general thermal system dynamics of the Czochralski technique.

Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Brett Hallam

2017-12-01

Full Text Available This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon

Science.gov (United States)

Ueki, Takemi; Itsumi, Manabu; Takeda, Tadao

1998-04-01

We analyzed the side-wall structure of grown-in octahedral defects in Czochralski silicon standard wafers for large-scale integrated circuits. There are two types of twin octahedral defects: an overlapping type and an adjacent type. In the twin octahedral defects of the overlapping type, a hole is formed in the connection part. The side-wall layer in the hole part is formed continually and is the same thickness as the side-wall layers of both octahedrons. In the twin octahedral defects of the adjacent type, a partition layer is formed in the connection part. Our electron energy-loss spectroscopy analyses identified that the side-wall layer includes SiO2.

In Situ Determination of Thermal Profiles during Czochralski Silicon Crystal Growth by an Eddy Current Technique.

Science.gov (United States)

Choe, Kwang Su.

An eddy current testing method was developed to continuously monitor crystal growth process and determine thermal profiles in situ during Czochralski silicon crystal growth. The work was motivated by the need to improve the quality of the crystal by controlling thermal gradients and annealing history over the growth cycle. The experimental concept is to monitor intrinsic electrical conductivities of the growing crystal and deduce temperature values from them. The experiments were performed in a resistance-heated Czochralski puller with a 203 mm (8 inch) diameter crucible containing 6.5 kg melt. The silicon crystals being grown were about 80 mm in diameter and monitored by an encircling sensor operating at three different test frequencies (86, 53 and 19 kHz). A one-dimensional analytical solution was employed to translate the detected signals into electrical conductivities. In terms of experiments, the effects of changes in growth condition, which is defined by crystal and crucible rotation rates, crucible position, pull rate, and hot-zone configuration, were investigated. Under a given steady-state condition, the thermal profile was usually stable over the entire length of crystal growth. The profile shifted significantly, however, when the crucible rotation rate was kept too high. As a direct evidence to the effects of melt flow on heat transfer process, a thermal gradient minimum was observed about the crystal/crucible rotation combination of 20/-10 rpm cw. The thermal gradient reduction was still most pronounced when the pull rate or the radiant heat loss to the environment was decreased: a nearly flat axial thermal gradient was achieved when either the pull rate was halved or the height of the exposed crucible wall was effectively doubled. Under these conditions, the average axial thermal gradient along the surface of the crystal was about 4-5 ^{rm o}C/mm. Regardless of growth condition, the three-frequency data revealed radial thermal gradients much larger

X-Ray Diffraction (XRD) Characterization Methods for Sigma=3 Twin Defects in Cubic Semiconductor (100) Wafers

Science.gov (United States)

Park, Yeonjoon (Inventor); Kim, Hyun Jung (Inventor); Skuza, Jonathan R. (Inventor); Lee, Kunik (Inventor); King, Glen C. (Inventor); Choi, Sang Hyouk (Inventor)

2017-01-01

An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.

Numerical simulation of convection and heat transfer in Czochralski crystal growth by multiple-relaxation-time LBM

Science.gov (United States)

Liu, Ding; Huang, Weichao; Zhang, Ni

2017-07-01

A two-dimensional axisymmetric swirling model based on the lattice Boltzmann method (LBM) in a pseudo Cartesian coordinate system is posited to simulate Czochralski (Cz) crystal growth in this paper. Specifically, the multiple-relaxation-time LBM (MRT-LBM) combined with the finite difference method (FDM) is used to analyze the melt convection and heat transfer in the process of Cz crystal growth. An incompressible axisymmetric swirling MRT-LB D2Q9 model is applied to solve for the axial and radial velocities by inserting thermal buoyancy and rotational inertial force into the two-dimensional lattice Boltzmann equation. In addition, the melt temperature and the azimuthal velocity are solved by MRT-LB D2Q5 models, and the crystal temperature is solved by FDM. The comparison results of stream functions values of different methods demonstrate that our hybrid model can be used to simulate the fluid-thermal coupling in the axisymmetric swirling model correctly and effectively. Furthermore, numerical simulations of melt convection and heat transfer are conducted under the conditions of high Grashof (Gr) numbers, within the range of 105 ˜ 107, and different high Reynolds (Re) numbers. The experimental results show our hybrid model can obtain the exact solution of complex crystal-growth models and analyze the fluid-thermal coupling effectively under the combined action of natural convection and forced convection.

A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

Science.gov (United States)

Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

1980-01-01

Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

Numerical Modelling of the Czochralski Growth of β-Ga2O3

Directory of Open Access Journals (Sweden)

Wolfram Miller

2017-01-01

Full Text Available Our numerical modelling of the Czochralski growth of single crystalline β-Ga 2 O 3 crystals (monoclinic symmetry starts at the 2D heat transport analysis within the crystal growth furnace, proceeds with the 3D heat transport and fluid flow analysis in the crystal-melt-crucible arrangement and targets the 3D thermal stress analysis within the β-Ga 2 O 3 crystal. In order to perform the stress analysis, we measured the thermal expansion coefficients and the elastic stiffness coefficients in two samples of a β-Ga 2 O 3 crystal grown at IKZ. Additionally, we analyse published data of β-Ga 2 O 3 material properties and use data from literature for comparative calculations. The computations were performed by the software packages CrysMAS, CGsim, Ansys-cfx and comsol Multiphysics. By the hand of two different thermal expansion data sets and two different crystal orientations, we analyse the elastic stresses in terms of the von-Mises stress.

Centrifugal pumping during Czochralski silicon growth with a strong, non-uniform, axisymmetric magnetic field

Science.gov (United States)

Khine, Y. Y.; Walker, J. S.

1996-08-01

Centrifugal pumping flows are produced in the melt by the rotations of crystal and crucible during the Czochralski growth of silicon crystals. This paper treats the centrifugal pumping effects with a steady, strong, non-uniform axisymmetric magnetic field. We consider a family of magnetic fields ranging from a uniform axial field to a "cusp" field, which has a purely radial field at the crystal-melt interface and free surface. We present the numerical solutions for the centrifugal pumping flows as the magnetic field is changed continuously from a uniform axial field to a cusp one, and for arbitrary Hartmann number. Since the perfect alignment between the local magnetic field vector and the crystal-melt interface or free surface is not likely, we also investigate the effects of a slight misalignment.

Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

Energy Technology Data Exchange (ETDEWEB)

Chen, Jiahe; Yang, Deren [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou (China)

2009-07-01

Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect in Cz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

Science.gov (United States)

Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

2018-04-01

Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

A thermal model for czochralski silicon crystal growth with an axial magnetic field

Science.gov (United States)

Hjellming, L. N.

1990-07-01

This paper presents a thermal model for molten silicon in a Czochralski crystal puller system with an applied uniform axial magnetic field. The melt depth is treated as continually decreasing, which affects the thermal environment of the melt and crystal. The radiative heat loss and the input heat flux are treated as functions of time, with a constraint placed on the heat lost to the crystal from the melt. As the melt motion reaches a steady state rapidly, the temperature and flow fields are treated as instantaneously steady at each melt depth. The heat transport is a mixture of conduction and convection, and by considering the crystal and crucible to be rotating with the same angular velocity, the flows driven by buoyancy and thermocapillarity are isolated and provide the convective heat transport in the melt for the range of magnetic field strengths 0.2 ≤ B ≤ 1.0T.

Determination of intrinsic polarization for K{sub 2}ZnCl{sub 4} single crystal grown by Czochralski technique for ferroelectric applications

Energy Technology Data Exchange (ETDEWEB)

Kumar, Sonu [Crystal Lab, Department of Physics & Astrophysics, University of Delhi, Delhi-7 (India); Ray, Geeta [Crystal Lab, Department of Physics & Astrophysics, University of Delhi, Delhi-7 (India); Physics Department, Miranda House, University of Delhi, Delhi-7 (India); Sinha, Nidhi [Crystal Lab, Department of Physics & Astrophysics, University of Delhi, Delhi-7 (India); Department of Electronics, SGTB Khalsa College, University of Delhi, Delhi-7 (India); Kumar, Binay, E-mail: b3kumar69@yahoo.co.in [Crystal Lab, Department of Physics & Astrophysics, University of Delhi, Delhi-7 (India)

2017-04-01

Large sized single crystal of K{sub 2}ZnCl{sub 4} (KZC) was grown by Czochralski (Cz) technique. Structural parameters of KZC were determined by Single crystal X-ray diffraction (SCXRD). From DSC analysis and temperature dependent dielectric measurement, KZC crystal was found to show Curie phase transition at 151 °C. TG/DTA confirmed the melting point that was found to be 443 °C. The value of piezoelectric charge coefficient (d{sub 33}) for KZC crystal was found to be 32 pC/N demonstrating their applicability in transducers and piezoelectric devices. Ferroelectric P-E loop for the grown crystal was traced at room temperature and the intrinsic polarization obtained by PUND measurement was found to be 0.1398 μC/cm{sup 2} indicating its applicability in switching devices. The energy band gap for KZC single crystal was found to be 6.13 eV. Vickers micro-hardness test revealed soft nature of KZC single crystals. - Highlights: • Large sized K{sub 2}ZnCl{sub 4} (KZC) single crystal was grown by Czochralski technique. • It possesses high Curie temperature as 151 °C. • d{sub 33} coefficient was found to be 32 pC/N. • Intrinsic polarization measured by PUND. • Its direct band gap energy was calculated to be 6.13 eV.

Energy variable monoenergetic positron beam study of oxygen atoms in Czochralski grown Si

International Nuclear Information System (INIS)

Tanigawa, S.; Wei, L.; Tabuki, Y.; Nagai, R.; Takeda, E.

1992-01-01

A monoenergetic positron beam has been used to investigate the state of interstitial oxygen in Czochralski-grown Si with the coverage of SiO 2 (100 nm) and poly-Si (200 nm)/SiO 2 (100 nm), respectively. It was found that (i) the growth of SiO 2 gives rise to a strong Doppler broadening of positron annihilation radiations in the bulk of Si, (ii) such a broadening can be recovered to the original level by annealing at 450degC, by the removal of overlayers using chemical etching and long-term aging at room temperature, (iii) the film stress over the CZ-grown Si is responsible for the rearrangement of oxygen atoms in S and (iv) only tensile stress gives rise to the clustering of oxygen atoms. The observed broadening was assigned to arise from the positron trapping by oxygen interstitial clusters. It was concluded that film stress is responsible for the rearrangement of oxygen atoms in CZ-grown Si. (author)

Reduction of oxygen concentration by heater design during Czochralski Si growth

Science.gov (United States)

Zhou, Bing; Chen, Wenliang; Li, Zhihui; Yue, Ruicun; Liu, Guowei; Huang, Xinming

2018-02-01

Oxygen is one of the highest-concentration impurities in single crystals grown by the Czochralski (CZ) process, and seriously impairs the quality of the Si wafer. In this study, computer simulations were applied to design a new CZ system. A more appropriate thermal field was acquired by optimization of the heater structure. The simulation results showed that, compared with the conventional system, the oxygen concentration in the newly designed CZ system was reduced significantly throughout the entire CZ process because of the lower crucible wall temperature and optimized convection. To verify the simulation results, experiments were conducted on an industrial single-crystal furnace. The experimental results showed that the oxygen concentration was reduced significantly, especially at the top of the CZ-Si ingot. Specifically, the oxygen concentration was 6.19 × 1017 atom/cm3 at the top of the CZ-Si ingot with the newly designed CZ system, compared with 9.22 × 1017 atom/cm3 with the conventional system. Corresponding light-induced degradation of solar cells based on the top of crystals from the newly designed CZ system was 1.62%, a reduction of 0.64% compared with crystals from the conventional system (2.26%).

Forced and thermocapillary convection in silicon Czochralski crystal growth in semispherical crucible

International Nuclear Information System (INIS)

Mokhtari, F; Bouabdallah, A; Zizi, M; Hanchi, S; Alemany, A

2010-01-01

In order to understand the influence of a semispherical crucible geometry combined with different convection modes as a thermocapillary convection, natural convection and forced convection, induced by crystal rotation, on melt flow pattern in silicon Czochralski crystal growth process, a set of numerical simulations are conducted using Fluent Software. We solve the system of equations of heat and momentum transfer in classical geometry as cylindrical and modified crystal growth process geometry as cylindro-spherical. In addition, we adopt hypothesis adapted to boundary conditions near the interface and calculations are executed to determine temperature, pressure and velocity fields versus Grashof and Reynolds numbers. The analysis of the obtained results led to conclude that there is advantage to modify geometry in comparison with the traditional one. The absence of the stagnation regions of fluid in the hemispherical crucible corner and the possibility to control the melt flow using the crystal rotation enhances the quality of the process comparatively to the cylindrical one. The pressure field is strongly related to the swirl velocity.

Forced and thermocapillary convection in silicon Czochralski crystal growth in semispherical crucible

Energy Technology Data Exchange (ETDEWEB)

Mokhtari, F [Physics Department, Faculty of Science, University of Mouloud Mammeri, Tizi Ouzou (Algeria); Bouabdallah, A; Zizi, M [LTSE Laboratory, University of Science and Technology USTHB. BP 32 Elalia, Babezzouar, Algiers (Algeria); Hanchi, S [UER Mecanique/ E.M.P B.P 17, Bordj El Bahri, Algiers (Algeria); Alemany, A, E-mail: abouab2002@yahoo.f [Laboratoire EPM, CNRS, Grenoble (France)

2010-03-01

In order to understand the influence of a semispherical crucible geometry combined with different convection modes as a thermocapillary convection, natural convection and forced convection, induced by crystal rotation, on melt flow pattern in silicon Czochralski crystal growth process, a set of numerical simulations are conducted using Fluent Software. We solve the system of equations of heat and momentum transfer in classical geometry as cylindrical and modified crystal growth process geometry as cylindro-spherical. In addition, we adopt hypothesis adapted to boundary conditions near the interface and calculations are executed to determine temperature, pressure and velocity fields versus Grashof and Reynolds numbers. The analysis of the obtained results led to conclude that there is advantage to modify geometry in comparison with the traditional one. The absence of the stagnation regions of fluid in the hemispherical crucible corner and the possibility to control the melt flow using the crystal rotation enhances the quality of the process comparatively to the cylindrical one. The pressure field is strongly related to the swirl velocity.

Buoyant convection during Czochralski silicon growth with a strong, non-uniform, axisymmetric magnetic field

Science.gov (United States)

Khine, Y. Y.; Walker, J. S.

1995-02-01

This paper treats the buoyant convection during the Czochralski growth of silicon crystals with a steady, strong, non-uniform, axisymmetric magnetic field. We consider a family of magnetic fields which includes a uniform axial magnetic field and a "cusp" field which is produced by identical solenoids placed symmetrically above and below the plane of the crystal-melt interface and free surface. We investigate the evolution of the buoyant convection as the magnetic field is changed continuously from a uniform axial field to a cusp field, with a constant value of the root-mean-squared magnetic flux density in the melt. We also investigate changes as the magnetic flux density is increased. While the cusp field appears very promising, perfect alignment between the local magnetic field vector and the crystal-melt interface or free surface is not possible, so the effects of a slight misalignment are also investigated.

REVIEW ARTICLE: Oxygen diffusion and precipitation in Czochralski silicon

Science.gov (United States)

Newman, R. C.

2000-06-01

The objective of this article is to review our understanding of the properties of oxygen impurities in Czochralski silicon that is used to manufacture integrated circuits (ICs). These atoms, present at a concentration of ~1018 cm-3, occupy bond-centred sites (Oi) in as-grown Si and the jump rate between adjacent sites defines `normal' diffusion for the temperature range 1325 - 330 °C. Anneals at high temperatures lead to the formation of amorphous SiO2 precipitates that act as traps for fast diffusing metallic contaminants, such as Fe and Cu, that may be inadvertently introduced at levels as low as 1011 cm-3. Without this `gettering', there may be severe degradation of fabricated ICs. To accommodate the local volume increase during oxygen precipitation, there is parallel generation of self-interstitials that diffuse away and form lattice defects. High temperature (T > 700 °C) anneals are now well understood. Details of lower temperature processes are still a matter of debate: measurements of oxygen diffusion into or out of the Si surface and Oi atom aggregation have implied enhanced diffusion that has variously been attributed to interactions of Oi atoms with lattice vacancies, self-interstitials, metallic elements, carbon, hydrogen impurities etc. There is strong evidence for oxygen-hydrogen interactions at T continue to decrease as the size of future device features decreases below the lower end of the sub-micron range, currently close to 0.18 µm.

Scintillation properties of Zr co-doped Ce:(Gd, La).sub.2./sub.Si.sub.2./sub.O.sub.7./sub. grown by the Czochralski process

Czech Academy of Sciences Publication Activity Database

Murakami, R.; Kurosawa, S.; Shoji, Y.; Jarý, Vítězslav; Ohashi, Y.; Pejchal, Jan; Yokota, Y.; Kamada, K.; Nikl, Martin; Yoshikawa, A.

2016-01-01

Roč. 90, Jul (2016), s. 162-165 ISSN 1350-4487. [International Conference on Luminescent Detectors and Transformers of Ionizing Radiation (LUMDETR). Tartu (Estonsko), 20.09.2015-25.09.2015] R&D Projects: GA MŠk(CZ) LH14266 Institutional support: RVO:68378271 Keywords : scintillator * pyrosilicate * La- GPS * Czochralski process * co-doping effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.442, year: 2016

A study on carbon incorporation in semi-insulating GaAs crystals grown by the vapor pressure controlled Czochralski technique (VCz). Pt. I. Experiments and Results

Energy Technology Data Exchange (ETDEWEB)

Jacob, K.; Frank, C.; Neubert, M.; Rudolph, P. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); Ulrici, W. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); Paul-Drude-Inst. fuer Festkoerperelektronik, Berlin (Germany); Jurisch, M. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); Freiberger Compound Materials GmbH, Freiberg (Germany); Korb, J. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); GTT Technologies, Freiberg (Germany)

2000-07-01

In the past it has been demonstrated that the carbon concentration of large semi-insulating (SI) GaAs single crystals grown by the conventional liquid encapsulation Czochralski (LEC) technique can be controlled by several methods including variations of growth parameters. It was the aim of the present paper to clarify which of the relationships of LEC growth could be used for a carbon control in the VCz-method characterized by the application of an inner chamber made from graphite to avoid selective As evaporation. In detail this comprised a study of the influence of several growth parameters like the water content of the boric oxide, the composition of the working atmosphere, the gas flow, a titanium gettering and additions of gallium oxide. As a result, for the first time carbon concentrations down to {approx} 10{sup 14} cm{sup -3} were obtained in 3{sup ''} (75 mm) diameter VCz crystals. (orig.)

Continuous Czochralski growth: Silicon sheet growth development of the large area silicon sheet task of the Low Cost Silicon Solar Array project

Science.gov (United States)

1978-01-01

The primary objective of this contract is to develop equipment and methods for the economic production of single crystal ingot material by the continuous Czochralski (CZ) process. Continuous CZ is defined for the purpose of this work as the growth of at least 100 kilograms of ingot from only one melt container. During the reporting period (October, 1977 - September, 1978), a modified grower was made fully functional and several recharge runs were performed. The largest run lasted 44 hours and over 42 kg of ingot was produced. Little, if any, degradation in efficiency was observed as a result of pulling multiple crystals from one crucible. Solar efficiencies observed were between 9.3 and 10.4% AMO (13.0 and 14.6% AMI) compared to 10.5% (14.7% AMI) for optimum CZ material control samples. Using the SAMICS/IPEG format, economic analysis of continuous CZ suggests that 1986 DoE cost goals can only be met by the growth of large diameter, large mass crystals.

Microdefects in an as-grown Czochralski silicon crystal studied by synchrotron radiation section topography with aid of computer simulation

International Nuclear Information System (INIS)

Iida, Satoshi; Aoki, Yoshirou; Okitsu, Kouhei; Sugita, Yoshimitsu; Kawata, Hiroshi; Abe, Takao

1998-01-01

Grown-in microdefects of a Czochralski (CZ) silicon crystal grown at a slow growth rate were studied by section topography using high energy synchrotron radiation. Images of the microdefects in the section topographs were analyzed quantitatively using computer simulation based on the Takagi-Taupin type dynamical diffraction theory of X-rays, and reproduced successfully by the simulation when the microdefects were assumed to be spherical strain centers. Sizes and positions of the microdefects were able to be determined by detailed comparison between the experiments and the computer simulations. The validity of the computer simulation in an analysis of the section topographs is discussed. (author)

X-ray Topographic Investigations of Domain Structure in Czochralski Grown PrxLa1-xAlO3 Crystals

International Nuclear Information System (INIS)

Wieteska, K.; Wierzchowski, W.; Malinowska, A.; Turczynski, S.; Pawlak, D.A.; Lukasiewicz, T.; Lefeld-Sosnowska, M.; Graeff, W.

2010-01-01

In the present paper X-ray diffraction topographic techniques were applied to a number of samples cut from Czochralski grown Pr x La 1-x AlO 3 crystals with different ratio of praseodymium and lanthanum. Conventional and synchrotron X-ray topographic investigations revealed differently developed domain structures dependent on the composition of mixed praseodymium lanthanum aluminium perovskites. Some large mosaic blocks were observed together with the domains. In the best crystals, X-ray topographs revealed striation fringes and individual dislocations inside large domains. Synchrotron topographs allowed us to indicate that the domains correspond to three different crystallographic planes, and to evaluate the lattice misorientation between domains in the range of 20-50 arc min (authors)

Effects of growth conditions on thermal profiles during Czochralski silicon crystal growth

Science.gov (United States)

Choe, Kwang Su; Stefani, Jerry A.; Dettling, Theodore B.; Tien, John K.; Wallace, John P.

1991-01-01

An eddy current testing method was used to continuously monitor crystal growth process and investigate the effects of growth conditions on thermal profiles during Czochralski silicon crystal growth. The experimental concept was to monitor the intrinsic electrical conductivities of the growing crystal and deduce temperature values from them. In terms of the experiments, the effects of changes in growth parameters, which include the crystal and crucible rotation rates, crucible position, and pull rate, and hot-zone geometries were investigated. The results show that the crystal thermal profile could shift significantly as a function of crystal length if the closed-loop control fails to maintain a constant thermal condition. As a direct evidence to the effects of the melt flow on heat transfer processes, a thermal gradient minimum was observed when the crystal/crucible rotation combination was 20/-10 rpm cw. The thermal gradients in the crystal near the growth interface were reduced most by decreasing the pull rate or by reducing the radiant heat loss to the environment; a nearly constant axial thermal gradient was achieved when either the pull rate was decreased by half, the height of the exposed crucible wall was doubled, or a radiation shield was placed around the crystal. Under these conditions, the average axial thermal gradient along the surface of the crystal was about 4-5°C/mm. When compared to theoretical results found in literature, the axial profiles correlated well with the results of the models which included radiant interactions. However, the radial gradients estimated from three-frequency data were much higher than what were predicted by known theoretical models. This discrepancy seems to indicate that optical phenomenon within the crystal is significant and should be included in theoretical modeling.

Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

International Nuclear Information System (INIS)

Pacifico, Nicola; Dolenc Kittelmann, Irena; Fahrer, Manuel; Moll, Michael; Militaru, Otilia

2011-01-01

Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280Ωcm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8×10 15 /cm 2 . The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

Three-dimensional study of the pressure field and advantages of hemispherical crucible in silicon Czochralski crystal growth

Energy Technology Data Exchange (ETDEWEB)

Mokhtari, F. [LTSE Laboratory, University of Science and Technol., USTHB BP 32 Elalia, Babezzouar, Algiers (Algeria); University Mouloud Mammeri, Tizi Ouzou (Algeria); Merah, A. [University M' hammed Bougara, Boumerdes (Algeria); Zizi, M. [LTSE Laboratory, University of Science and Technol., USTHB BP 32 Elalia, Babezzouar, Algiers (Algeria); Hanchi, S. [UER Mecanique/ E.M.P B.P 17 Bordj El Bahri, Algiers (Algeria); Alemany, A. [Laboratoire EPM, CNRS, Grenoble (France); Bouabdallah, A.

2010-06-15

The effects of several growth parameters in cylindrical and spherical Czochralski crystal process are studied numerically and particularly, we focus on the influence of the pressure field. We present a set of three-dimensional computational simulations using the finite volume package Fluent in two different geometries, a new geometry as cylindro-spherical and the traditional configuration as cylindro-cylindrical. We found that the evolution of pressure which is has not been studied before; this important function is strongly related to the vorticity in the bulk flow, the free surface and the growth interface. It seems that the pressure is more sensitive to the breaking of symmetry than the other properties that characterize the crystal growth as temperature or velocity fields. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

International Nuclear Information System (INIS)

Jung, Y. J.; Kim, W. K.; Jung, J. H.

2014-01-01

The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

Energy Technology Data Exchange (ETDEWEB)

Jung, Y. J.; Kim, W. K.; Jung, J. H. [Yeungnam University, Gyeongsan (Korea, Republic of)

2014-08-15

The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

International Nuclear Information System (INIS)

Ma, S K; Lui, M K; Ling, C C; Fung, S; Beling, C D; Li, K F; Cheah, K W; Gong, M; Hang, H S; Weng, H M

2004-01-01

Electron irradiated undoped liquid encapsulated Czochralski (LEC) grown GaSb samples were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). In addition to the 315 ps component reported in the previous studies, another defect with a lifetime of 280 ps was also identified in the present electron irradiated samples. The bulk lifetime of the GaSb material was found to be 258 ps. The V Ga,280ps and the V Ga,315ps defects were associated with two independent Ga vacancy related defects having different microstructures. The well known 777 meV PL signal (usually band A) was also observed in the electron irradiated undoped GaSb samples. The band A intensity decreases with increasing electron irradiation dosage and it disappears after the 300 deg. C annealing regardless of the irradiation dosage. The origin of the band A signal is also discussed

Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

Energy Technology Data Exchange (ETDEWEB)

Pacifico, Nicola, E-mail: nicola.pacifico@cern.ch [CERN, Geneva (Switzerland); Dolenc Kittelmann, Irena; Fahrer, Manuel; Moll, Michael [CERN, Geneva (Switzerland); Militaru, Otilia [UCL, Louvain (Belgium)

2011-12-01

Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280{Omega}cm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8 Multiplication-Sign 10{sup 15}/cm{sup 2}. The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

Infrared studies of defects formed during postirradiation anneals of Czochralski silicon

Science.gov (United States)

Londos, C. A.; Sarlis, N. V.; Fytros, L. G.

1998-10-01

This article reports on defect studies of neutron-irradiated Czochralski-grown silicon (Cz-Si) material by means of infrared spectroscopy. In particular, the investigation was focused on the evolution of the 828 cm-1 well-known band of A-center, due to isochronal anneals from room temperature (RT) up to ≈700 °C. The strength of the VO band begins to increase above ≈200 gradually up to 300 °C (stage I); then, it begins to decrease up to ≈400 °C (stage II), where upon it stabilizes up to ≈550 °C (stage III). Upon re-irradiation under exactly the same conditions and repeating the annealing process, the increase of the VO signal in stage I disappears. The phenomenon is ascribed to the existence of defect aggregates labeled as Xi centers which are correlated with (impurity-defect) clusters that compete with Oi in capturing vacancies. The presence of Xi centers is related to the thermal annealings performed. Comparison of the evolution of VO (828 cm-1) and VO2 (887 cm-1) bands between irradiated and re-irradiated materials, during stage II, is made and the results are discussed in the framework of established reaction patterns. The stabilization of the amplitude of the 828 cm-1 line in stage III is examined. The prevailing aspect is that a portion of A-centers in neutron-irradiated Si acquires larger thermal stability by relaxing in the vicinity of larger defects.

Numerical and experimental study of a solid pellet feed continuous Czochralski growth process for silicon single crystals

Science.gov (United States)

Anselmo, A.; Prasad, V.; Koziol, J.; Gupta, K. P.

1993-07-01

A polysilicon pellets (≅1 mm diameter) feed continuous Czochralski (CCZ) growth process for silicon single crystals is proposed and investigated. Experiments in an industrial puller (14-18 inch diameter crucible) successfully demonstrate the feasibility of this process. The advantages of the proposed scheme are: a steady state growth process, a low aspect ratio melt, uniformity of heat addition and a growth apparatus with single crucible and no baffle(s). The addition of dopant with the solid charge will allow a better control of oxygen concentration leading to crystals of uniform properties and better quality. This paper presents theoretical results on melting of fully and partially immersed silicon spheres and numerical solutions on temperature and flow fields in low aspect ration melts with and without the addition of solid pellets. The theoretical and experimental results obtained thus far show a great promise for the proposed scheme.

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

International Nuclear Information System (INIS)

Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

2014-01-01

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

Energy Technology Data Exchange (ETDEWEB)

Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

2014-01-20

The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

Numerical study on the effect of temperature oscillations on the crystallization front shape during Czochralski growth of gadolinium gallium garnet crystal

Science.gov (United States)

Faiez, Reza; Rezaei, Yazdan

2017-10-01

Time-dependent, finite volume method calculations of momentum and heat transfer were carried out to investigate the correlation between oscillatory convection and the crystallization front dynamics during the Czochralski (Cz) growth of an oxide material. The present modeling allows us to illustrate the modification of the interface shape during the time period of oscillation of the flow manifesting as the formation of a cold plume beneath the phase boundary. It was shown that the instability mechanism is associated with an irreversible dramatic change in the interface shape, which occurs at a critical Reynolds number significantly lower than that is predicted by the quasi-stationary global model analysis of the Cz growth system. The baroclinic term which appears in the vorticity equation in a rotating stratified fluid is used to describe the numerical results of the model. The properties of the thermal waves were studied in the monitoring points located nearby the interface. The waves are regular but not in fact vertically correlated as observed in the case of baroclinic waves. The Rayleigh-Benard dynamics is suggested to be the predominant mechanism even though the instability is primarily baroclinic.

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

International Nuclear Information System (INIS)

Chroneos, A.; Londos, C. A.; Sgourou, E. N.

2011-01-01

Experimental and theoretical techniques are used to investigate the impact of tin doping on the formation and the thermal stability of oxygen- and carbon-related defects in electron-irradiated Czochralski silicon. The results verify previous reports that Sn doping reduces the formation of the VO defect and suppresses its conversion to the VO 2 defect. Within experimental accuracy, a small delay in the growth of the VO 2 defect is observed. Regarding carbon-related defects, it is determined that Sn doping leads to a reduction in the formation of the C i O i , C i C s , and C i O i (Si I ) defects although an increase in their thermal stability is observed. The impact of strain induced in the lattice by the larger tin substitutional atoms, as well as their association with intrinsic defects and carbon impurities, can be considered as an explanation to account for the above observations. The density functional theory calculations are used to study the interaction of tin with lattice vacancies and oxygen- and carbon-related clusters. Both experimental and theoretical results demonstrate that tin co-doping is an efficient defect engineering strategy to suppress detrimental effects because of the presence of oxygen- and carbon-related defect clusters in devices.

Numerical analysis of continuous charge of lithium niobate in a double-crucible Czochralski system using the accelerated crucible rotation technique

Science.gov (United States)

Kitashima, Tomonori; Liu, Lijun; Kitamura, Kenji; Kakimoto, Koichi

2004-05-01

The transport mechanism of supplied raw material in a double-crucible Czochralski system using the accelerated crucible rotation technique (ACRT) was investigated by three-dimensional and time-dependent numerical simulation. The calculation clarified that use of the ACRT resulted in enhancement of the mixing effect of the supplied raw material. It is, therefore, possible to maintain the composition of the melt in an inner crucible during crystal growth by using the ACRT. The effect of the continuous charge of the raw material on melt temperature was also investigated. Our results showed that the effect of feeding lithium niobate granules on melt temperature was small, since the feeding rate of the granules is small. Therefore, solidification of the melt surface due to the heat of fusion in this system is not likely.

Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

International Nuclear Information System (INIS)

Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

2015-01-01

Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

Spatially resolved localized vibrational mode spectroscopy of carbon in liquid encapsulated Czochralski grown gallium arsenide wafers

International Nuclear Information System (INIS)

Yau, Waifan.

1988-04-01

Substitutional carbon on an arsenic lattice site is the shallowest and one of the most dominant acceptors in semi-insulating Liquid Encapsulated Czochralski (LEC) GaAs. However, the role of this acceptor in determining the well known ''W'' shape spatial variation of neutral EL2 concentration along the diameter of a LEC wafer is not known. In this thesis, we attempt to clarify the issue of the carbon acceptor's effect on this ''W'' shaped variation by measuring spatial profiles of this acceptor along the radius of three different as-grown LEC GaAs wafers. With localized vibrational mode absorption spectroscopy, we find that the profile of the carbon acceptor is relatively constant along the radius of each wafer. Average values of concentration are 8 x 10E15 cm -3 , 1.1 x 10E15 cm -3 , and 2.2 x 10E15 cm -3 , respectively. In addition, these carbon acceptor LVM measurements indicate that a residual donor with concentration comparable to carbon exists in these wafers and it is a good candidate for the observed neutral EL2 concentration variation. 22 refs., 39 figs

Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

International Nuclear Information System (INIS)

Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

2015-01-01

The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

Improvements of uniformity and stoichiometry for zone-leveling Czochralski growth of MgO-doped LiNbO3 crystals

International Nuclear Information System (INIS)

Tsai, C.B.; Hsu, W.T.; Shih, M.D.; Tai, C.Y.; Hsieh, C.K.; Hsu, W.C.; Hsu, R.T.; Lan, C.W.

2006-01-01

The zone-leveling Czochralski (ZLCz) technique is a continuous feeding process and can be used for the growth of near-stoichiometric lithium niobate (SLN) single crystals. However, the finite crucible length can cause the variation of the zone length and thus the composition and stoichiometry, especially in the growth of a large diameter crystal. To solve the problems, several approaches were proposed for the growth of 4 cm-diameter 1 mol% MgO-doped SLN. The modification of the hot zone to minimize the zone variation was found useful for the uniformity, but the stoichiometry was inadequate even with the zone composition up to 60 mol% Li 2 O. A Li-excess feed was further used and a good Li/Nb ratio was obtained. Adding K 2 O (16 mol%) into the solution zone was useful as well, but it was inferior to using the Li-excess feed. In addition, a much lower growth rate was needed for getting an inclusion-free crystal

Czochralski growth and characterization of {beta}-Ga{sub 2}O{sub 3} single crystals

Energy Technology Data Exchange (ETDEWEB)

Galazka, Z.; Uecker, R.; Irmscher, K.; Albrecht, M.; Klimm, D.; Pietsch, M.; Bruetzam, M.; Bertram, R.; Ganschow, S.; Fornari, R. [Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin (Germany)

2010-12-15

Transparent semiconducting {beta}-Ga{sub 2}O{sub 3} single crystals were grown by the Czochralski method from an iridium crucible under a dynamic protective atmosphere to control partial pressures of volatile species of Ga{sub 2}O{sub 3}. Thermodynamic calculations on different atmospheres containing CO{sub 2}, Ar and O{sub 2} reveal that CO{sub 2} growth atmosphere combined with overpressure significantly decreases evaporation of volatile Ga{sub 2}O{sub 3} species without any harm to iridium crucible. It has been found that CO{sub 2}, besides providing high oxygen concentration at high temperatures, is also acting as a minor reducing agent for Ga{sub 2}O{sub 3}. Different coloration of obtained crystals as well as optical and electrical properties are directly correlated with growth conditions (atmosphere, pressure and temperature gradients), but not with residual impurities. Typical electrical properties of the n-type {beta}-Ga{sub 2}O{sub 3} crystals at room temperature are: {rho} = 0.1 - 0.3 {omega}cm, {mu}{sub n,Hall} = 110 - 150 cm{sup 2}V{sup -1}s{sup -1}, n{sub Hall} = 2 - 6 x 10{sup 17} cm{sup -3} and E{sub Ionisation} = 30 - 40 meV. A decrease of transmission in the IR-region is directly correlated with the free carrier concentration and can be effectively modulated by the dynamic growth atmosphere. Electron paramagnetic resonance (EPR) spectra exhibit an isotropic shallow donor level and anisotropic defect level. According to differential thermal analysis (DTA) measurements, there is substantially no mass change of {beta}-Ga{sub 2}O{sub 3} crystals below 1200 C (i.e. no decomposition) under oxidizing or neutral atmosphere, while the mass gradually decreases with temperature above 1200 C. High resolution transmission electron microscopy (HRTEM) images at atomic resolution show the presence of vacancies, which can be attributed to Ga or O sites, and interstitials, which can likely be attributed to Ga atoms. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGa

Electrical property studies of oxygen in Czochralski-grown neutron-transmutation-doped silicon

International Nuclear Information System (INIS)

Cleland, J.W.; Fukuoka, N.

1980-10-01

Electically active oxygen-related donors can be formed in Czochralski (Cz) Si either during crystal growth or during subsequent heat treatment; conventional n- or p-type dopant carrier concentrations are altered if these oxygen donors are present. Neutron transmutation doping (NTD) has been used to introduce a uniform concentration of 31 P in Si. However, oxygen donors can also be formed in NTD Cz Si during the process of annealing to remove NTD radiation damage. In the present experiments, the carrier concentration of Cz and NTD Cz Si samples was determined as a function of the initial dopant, oxygen, and 31 P concentration before and after isothermal or isochronal annealing. It is shown that low temperature (350 to 500 0 C) heat treatment can introduce a significant oxygen donor concentration in Cz Si and in NTD Cz Si that contains radiation-induced lattice defects. Intermediate temperature (550 to 750 0 C) heat treatment, which is intended to remove oxygen donors or lattice defects, can introduce other oxygen donors; annealing above 750 0 C is required to remove any of these oxygen donors. Extended (20 h) high-temperature (1000 to 1200 0 C) annealing can remove oxygen donors and lattice defects, but a significant concentration of oxygen donors can still be introduced by subsequent low temperature heat treatment. These results suggest that oxygen-related donor formation in NTD Cz Si at temperatures below 750 0 C may serve to mask any annealing study of lattice defects. It is concluded that annealing for 30 min at 750 0 C is sufficient to remove radiation damage in NTD Cz Si when the separate effects of oxygen donor formation are included

Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al

Science.gov (United States)

Galazka, Zbigniew; Ganschow, Steffen; Fiedler, Andreas; Bertram, Rainer; Klimm, Detlef; Irmscher, Klaus; Schewski, Robert; Pietsch, Mike; Albrecht, Martin; Bickermann, Matthias

2018-03-01

We experimentally evaluated segregation of Cr, Ce and Al in bulk β-Ga2O3 single crystals grown by the Czochralski method, as well as the impact of these dopants on optical properties. The segregation of Cr and Ce and their incorporation into the β-Ga2O3 crystal structure strongly depends on O2 concentration in the growth atmosphere which has a noticeable impact on decomposition of Ga2O3 and Cr2O3, as well as on the charge state of Cr and Ce. Effective segregation coefficients for Cr are in the range of 3.1-1.5 at 7-24 vol% O2, while for Ce they are roughly below 0.01 at 1.5-34 vol% O2. The effective segregation coefficient for Al is 1.1 at 1.5-21 vol% O2. Both dopants Ce and Al have a thermodynamically stabilizing effect on β-Ga2O3 crystal growth by supressing decomposition. While Ce has no impact on the optical transmittance in the ultraviolet and visible regions, in Cr doped crystals we observe three absorption bands due to Cr3+ on octahedral Ga sites, one in the ultraviolet merging with the band edge absorption of β-Ga2O3 and two in the visible spectrum, for which we estimate the absorption cross sections. Al doping also does not induce dopant related absorption bands but clearly shifts the absorption edge as one expects for a solid-solution crystal Ga2(1-x)Al2xO3 still in the monoclinic phase. For the highest doping concentration (Ga1.9Al0.1O3) we estimate an increase of the energy gap by 0.11 eV.

Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium

International Nuclear Information System (INIS)

Londos, C A; Andrianakis, A; Emtsev, V V; Ohyama, H

2009-01-01

Formation processes of vacancy-oxygen (VO) and carbon interstitial-oxygen interstitial (C i O i ) complexes in electron-irradiated Czochralski-grown Si crystals (Cz–Si), also doped with Ge, are investigated. IR spectroscopy measurements are employed to monitor the production of these defects. In Cz–Si with carbon concentrations [C s ] up to 1 × 10 17 cm −3 and Ge concentrations [Ge] up to 1 × 10 20 cm −3 the production rate of VO defects as well as the rate of oxygen loss show a slight growth of about 10% with the increasing Ge concentration. At high concentrations of carbon [C s ] around 2 × 10 17 cm −3 the production rate of VO defects is getting larger by ∼40% in Cz–Si:Ge at Ge concentrations around 1 × 10 19 cm −3 and then at [Ge] ≈ 2 × 10 20 cm −3 this enlargement drops to ∼13%, thus approaching the values characteristic of lesser concentrations of carbon. A similar behavior against Ge concentration displays the production rate of C i O i complexes. The same trend is also observed for the rate of carbon loss, whereas the trend for the rate of oxygen loss is opposite. The behavior of Ge atoms is different at low and high concentrations of this isoelectronic impurity in Cz–Si. At low concentrations most isolated Ge atoms serve as temporary traps for vacancies preventing them from indirect annihilation with self-interstitials. At high concentrations Ge atoms are prone to form clusters. The latter ones are traps for vacancies and self-interstitials due to the strain fields, increasing the importance of indirect annihilation of intrinsic point defects. Such a model allows one to give a plausible explanation for the obtained results. A new band at 994 cm −1 seen only in irradiated Ge-doped Cz–Si is also studied. Interestingly, its annealing behavior was found to be very similar to that of VO complexes

Numerical simulation of the oxygen concentration distribution in silicon melt for different crystal lengths during Czochralski growth with a transverse magnetic field

Science.gov (United States)

Chen, Jyh-Chen; Chiang, Pei-Yi; Nguyen, Thi Hoai Thu; Hu, Chieh; Chen, Chun-Hung; Liu, Chien-Cheng

2016-10-01

A three-dimensional simulation model is used to study the oxygen concentration distribution in silicon crystal during the Czochralski growth process under a transverse uniform magnetic field. The flow, temperature, and oxygen concentration distributions inside the furnace are calculated for different crystal lengths. There is significant variation in the flow structure in the melt with the growth length. The results show that in the initial stages, there is a decrease in the oxygen concentration at the crystal-melt interface as the length of the growing crystal increases. As the crystal lengthens further, a minimum value is reached after which the oxygen concentration increases continuously. This trend is consistent with that shown in the experimental results. The variation of the oxygen concentration with the growth length is strongly related to the depth of the melt in the crucible and the flow structure inside the melt. Better uniformity of the axial oxygen concentration can be achieved by proper adjustment of the crucible rotation rate during the growth process.

Structure and thermal expansion of Ca9Gd(VO4)7: A combined powder-diffraction and dilatometric study of a Czochralski-grown crystal

Science.gov (United States)

Paszkowicz, Wojciech; Shekhovtsov, Alexei; Kosmyna, Miron; Loiko, Pavel; Vilejshikova, Elena; Minikayev, Roman; Romanowski, Przemysław; Wierzchowski, Wojciech; Wieteska, Krzysztof; Paulmann, Carsten; Bryleva, Ekaterina; Belikov, Konstantin; Fitch, Andrew

2017-11-01

Materials of the Ca9RE(VO4)7 (CRVO) formula (RE = rare earth) and whitlockite-related structures are considered for applications in optoelectronics, e.g., in white-light emitting diodes and lasers. In the CRVO structure, the RE atoms are known to share the site occupation with Ca atoms at two or three among four Ca sites, with partial occupancy values depending on the choice of the RE atom. In this work, the structure and quality of a Czochralski-grown crystal of this family, Ca9Gd(VO4)7 (CGVO), are studied using X-ray diffraction methods. The room-temperature structure is refined using the powder diffraction data collected at a high-resolution synchrotron beamline ID22 (ESRF, Grenoble); for comparison purposes, a laboratory diffraction pattern was collected and analyzed, as well. The site occupancies are discussed on the basis of comparison with literature data of isostructural synthetic crystals of the CRVO series. The results confirm the previously reported site-occupation scheme and indicate a tendency of the CGVO compound to adopt a Gd-deficient composition. Moreover, the thermal expansion coefficient is determined for CGVO as a function of temperature in the 302-1023 K range using laboratory diffraction data. Additionally, for CGVO and six other single crystals of the same family, thermal expansion is studied in the 298-473 K range, using the dilatometric data. The magnitude and anisotropy of thermal expansion, being of importance for laser applications, are discussed for these materials.

Development of advanced Czochralski Growth Process to produce low cost 150 KG silicon ingots from a single crucible for technology readiness

Science.gov (United States)

1981-01-01

The goals in this program for advanced czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness are outlined. To provide a modified CG2000 crystal power capable of pulling a minimum of five crystals, each of approximately 30 kg in weight, 150 mm diameter from a single crucible with periodic melt replenishment. Crystals to have: resistivity of 1 to 3 ohm cm, p-type; dislocation density below 1- to the 6th power per cm; orientation (100); after growth yield of greater than 90%. Growth throughput of greater than 2.5 kg per hour of machine operation using a radiation shield. Prototype equipment suitable for use as a production facility. The overall cost goal is $.70 per peak watt by 1986. To accomplish these goals, the modified CG2000 grower and development program includes: (1) increased automation with a microprocessor based control system; (2) sensors development which will increase the capability of the automatic controls system, and provide technology transfer of the developed systems.

Quality evaluation of resistivity-controlled silicon crystals

Science.gov (United States)

Wang, Jong Hoe

2006-01-01

The segregation phenomenon of dopants causes a low production yield of silicon crystal that meets the resistivity tolerance required by device manufacturers. In order to control the macroscopic axial resistivity distribution in bulk crystal growth, numerous studies including continuous Czochralski method and double crucible technique have been studied. The simple B-P codoping method for improving the productivity of p-type silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. In this work, the quality of Czochralski-grown silicon single crystals with a diameter 200 mm using B-P codoping method was studied from the chemical and structural points of view. It was found that the characteristics of B-P codoped wafers including the oxygen precipitation behavior and the grown-in defects are same as that of conventional B-doped Czochralski crystals.

Growth and scintillation properties of Pr doped YAP with different Pr concentrations

International Nuclear Information System (INIS)

Yanagida, Takayuki; Kamada, Kei; Fujimoto, Yutaka; Sugiyama, Makoto; Furuya, Yuki; Yamaji, Akihiro; Yokota, Yuui; Yoshikawa, Akira

2010-01-01

Pr 3+ 0.2, 0.75, and 3 mol% doped YAP single crystalline scintillators were grown by using the micro-pulling down (μ-PD) method. Pr 3+ 0.05 mol% doped YAP was also prepared by using the Czochralski method. In transmittance spectra, 4f-5d absorption line appeared at 230 nm. The μ-PD grown crystals showed intense emission at 290 nm while the Czochralski grown one showed an emission peak at 245 nm in radio luminescence spectra under X-ray excitation. Among them, the Czochralski grown one exhibited the highest light yield under 137 Cs 662 keV excitation and the absolute light yield of this sample was estimated to be 20400±2000 ph/MeV. The decay time constants of these scintillators were around 10 ns due to Pr 3+ 5d-4f transition.

Growth and scintillation properties of Pr doped YAP with different Pr concentrations

Energy Technology Data Exchange (ETDEWEB)

Yanagida, Takayuki, E-mail: t_yanagi@tagen.tohoku.ac.j [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Kamada, Kei; Fujimoto, Yutaka; Sugiyama, Makoto; Furuya, Yuki [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yamaji, Akihiro [New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Yokota, Yuui [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

2010-11-21

Pr{sup 3+} 0.2, 0.75, and 3 mol% doped YAP single crystalline scintillators were grown by using the micro-pulling down ({mu}-PD) method. Pr{sup 3+} 0.05 mol% doped YAP was also prepared by using the Czochralski method. In transmittance spectra, 4f-5d absorption line appeared at 230 nm. The {mu}-PD grown crystals showed intense emission at 290 nm while the Czochralski grown one showed an emission peak at 245 nm in radio luminescence spectra under X-ray excitation. Among them, the Czochralski grown one exhibited the highest light yield under {sup 137}Cs 662 keV excitation and the absolute light yield of this sample was estimated to be 20400{+-}2000 ph/MeV. The decay time constants of these scintillators were around 10 ns due to Pr{sup 3+} 5d-4f transition.

A new family of thermal donors generated around 450 °C in phosphorus-doped Czochralski silicon

Science.gov (United States)

Kamiura, Yoichi; Hashimoto, Fumio; Yoneta, Minoru

1989-01-01

We have discovered a new family of oxygen-related double donors [new thermal donors (NTD's)] generated around 450 °C in phosphorus-doped Czochralski silicon by combining deep-level transient spectroscopy with Hall measurements. This new family was well distinguished from the normal family of thermal donors (TD's) currently studied so far. Our results have shown that both families of thermal donors exhibit qualitatively the same kinetic behavior. Namely, as the annealing time increases, their ionization energy of levels continuously decrease with their densities increasing until the maxima and then become constant with their densities decreasing. However, there are significantly quantitative differences between the both families; NTD's have shallower levels, considerably smaller generation rates, and higher thermal stability than TD's. Sufficiently prolonged annealing for more than 105 min around 450 °C or short donor-killing annealing for 20 min at 650 °C completely annihilates TD's, leaving only NTD's, of which the most stable and therefore most shallow species have been suggested by our Hall measurements to have donor levels at 0.04 and 0.09 eV below the conduction-band edge. The density of interstitial oxygen still continues to decrease even after prolonged annealing for more than 105 min, where NTD's are present in a stable condition in a concentration of 1×1015 cm-3. NTD's may correlate with the NL10 electron paramagnetic resonance center because of similarities in their generation kinetics. We have suggested a hypothesis that NTD's have similar defect structures as TD's and that an unknown nucleus involved in the core of NTD's plays an essential role in lowering their ionization energy of levels and generation rates and also in stabilizing their donor activity.

Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

Science.gov (United States)

Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

2016-11-01

The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime ( τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

Optical characteristics of novel bulk and nanoengineered laser host materials

Science.gov (United States)

Prasad, Narasimha S.; Sova, Stacey; Kelly, Lisa; Bevan, Talon; Arnold, Bradley; Cooper, Christopher; Choa, Fow-Sen; Singh, N. B.

2018-02-01

The hexagonal apatite single crystals have been investigated for their applications as laser host materials. Czochralksi and flux growth methods have been utilized to obtain single crystals. For low temperature processing (useful properties as laser hosts and bone materials. Calcium lanthanum silicate (Nd-doped) and lanthanum aluminate material systems were studied in detail. Nanoengineered calcium and lanthanum based silicates were synthesized by a solution method and their optical and morphological characteristics were compared with Czochralski grown bulk hydroxyapatite single crystals. Materials were evaluated by absorbance, fluorescence and Raman characteristics. Neodymium, iron and chromium doped crystals grown by a solution method showed weak but similar optical properties to that of Czochralski grown single crystals.

Structural and electrical properties of the GexSi1-x/Si heterojunctions obtained by the method of direct bonding

International Nuclear Information System (INIS)

Argunova, T. S.; Belyakova, E. I.; Grekhov, I. V.; Zabrodskii, A. G.; Kostina, L. S.; Sorokin, L. M.; Shmidt, N. M.; Yi, J. M.; Jung, J. W.; Je, J. H.; Abrosimov, N. V.

2007-01-01

The results of studying the structural and electrical properties of structures produced by the method of direct bonding of Ge x Si 1-x and Si wafers are reported. The wafers were cut from the crystals grown by the Czochralski method. Continuity of the interface and the crystal-lattice defects were studied by X-ray methods using synchrotron radiation and by scanning electron microscopy. Measurements of the forward and reverse current-voltage characteristics of the p-Ge x Si 1-x /n-Si diodes made it possible to assess the effect of the crystallattice defects on the electrical properties of heterojunctions. Satisfactory electrical parameters suggest that the technology of direct bonding is promising for the fabrication of large-area Ge x Si 1-x /Si heterojunctions

Effect of germanium doping on the annealing characteristics of oxygen and carbon-related defects in Czochralski silicon

International Nuclear Information System (INIS)

Londos, C. A.; Andrianakis, A.; Sgourou, E. N.; Emtsev, V.; Ohyama, H.

2010-01-01

This paper is devoted to the annealing studies of defects produced in carbon-rich Ge-doped Czochralski-grown Si (Cz-Si) by 2 MeV electron irradiation. The annealing temperature of vacancy-oxygen (VO) complexes, carbon interstitial-oxygen interstitial (C i O i ), and carbon interstitial-carbon substitutional (C i C s ) pairs as well as the formation temperature of vacancy-two oxygen (VO 2 ) complexes are monitored as a function of Ge concentration. It has been established that the annealing of C i O i and C i C s defects remains practically unaffected by the Ge presence, whereas the annealing temperature of VO defects and the formation temperature of VO 2 complexes are substantially lowered at Ge concentrations larger than 1x10 19 cm -3 . The hydrostatic component of elastic strains introduced by Ge atoms in the Si crystal lattice was calculated. It appears to be very small, at least insufficient to exert a pronounced effect upon the annealing behavior of radiation-produced defects. This conclusion is in line with what is observed for the C i O i and C i C s species. In the case of VO, whose annealing process in Cz-Si is concurrently conducted by two reaction paths VO+O i →VO 2 and VO+Si I →O i , we suggest that the latter reaction in Ge-doped Cz-Si is enhanced by emitting self-interstitials (Si I ) from loosely bound self-interstitial clusters predominantly formed around Ge impurity atoms. As a result, the liberation of self-interstitials at lower annealing temperatures leads to an enhanced annealing of VO defects. An enhanced formation of VO 2 complexes at lower temperatures is also discussed in terms of other reactions running in parallel with the reaction VO+Si I →O i .

Growth of Bi 12SiO 20 single crystals by the pulling-down method with continuous feeding

Science.gov (United States)

Maida, Shigeru; Higuchi, Mikio; Kodaira, Kohei

1999-09-01

Bi 12SiO 20 single crystals were successfully grown by the pulling-down method with continuous feeding. As-grown crystals were amber in color and transparent, and had no cracks or inclusions. A crystal with homogeneous composition was obtained from Bi-rich feed powder having a composition of 14.1 mol% SiO 2, whereas precipitates of Bi 4Si 3O 12 were observed on the surface of a crystal grown with stoichiometric powder. The shape of the solid-liquid interface during the crystal growth was estimated to be almost flat, which was favorable to avoid core formation. Average dislocation density was 4×10 3/cm 2, which was comparable to that of Bi 12SiO 20 crystals grown by the Czochralski method.

A Czochralski crystal puller automated by the weighing method

International Nuclear Information System (INIS)

Blumberg, H.; Reiche, P.; Watzinger, W.

1981-01-01

The automated crystal growing equipment makes use of a commercial electronic balance equipped with a microprocessor. The mode of operation is explained and experiences got on the occasion of crystal growth experiments are presented. (author)

Optical methods for microstructure determination of doped samples

Science.gov (United States)

Ciosek, Jerzy F.

2008-12-01

The optical methods to determine refractive index profile of layered materials are commonly used with spectroscopic ellipsometry or transmittance/reflectance spectrometry. Measurements of spectral reflection and transmission usually permit to characterize optical materials and determine their refractive index. However, it is possible to characterize of samples with dopants, impurities as well as defects using optical methods. Microstructures of a hydrogenated crystalline Si wafer and a layer of SiO2 - ZrO2 composition are investigated. The first sample is a Si(001):H Czochralski grown single crystalline wafer with 50 nm thick surface Si02 layer. Hydrogen dose implantation (D continue to be an important issue in microelectronic device and sensor fabrication. Hydrogen-implanted silicon (Si: H) has become a topic of remarkable interest, mostly because of the potential of implantation-induced platelets and micro-cavities for the creation of gettering -active areas and for Si layer splitting. Oxygen precipitation and atmospheric impurity are analysed. The second sample is the layer of co-evaporated SiO2 and ZrO2 materials using simultaneously two electron beam guns in reactive evaporation methods. The composition structure was investigated by X-Ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry methods. A non-uniformity and composition of layer are analysed using average density method.

Impact of interstitial iron on the study of meta-stable B-O defects in Czochralski silicon: Further evidence of a single defect

Science.gov (United States)

Kim, Moonyong; Chen, Daniel; Abbott, Malcolm; Nampalli, Nitin; Wenham, Stuart; Stefani, Bruno; Hallam, Brett

2018-04-01

We explore the influence of interstitial iron (Fei) on lifetime spectroscopy of boron-oxygen (B-O) related degradation in p-type Czochralski silicon. Theoretical and experimental evidence presented in this study indicate that iron-boron pair (Fe-B) related reactions could have influenced several key experimental results used to derive theories on the fundamental properties of the B-O defect. Firstly, the presence of Fei can account for higher apparent capture cross-section ratios (k) of approximately 100 observed in previous studies during early stages of B-O related degradation. Secondly, the association of Fe-B pairs can explain the initial stage of a two-stage recovery of carrier lifetime with dark annealing after partial degradation. Thirdly, Fei can result in high apparent k values after the permanent deactivation of B-O defects. Subsequently, we show that a single k value can describe the recombination properties associated with B-O defects throughout degradation, that the recovery during dark annealing occurs with a single-stage, and both the fast- and slow-stage B-O related degradation can be permanently deactivated during illuminated annealing. Accounting for the recombination activity of Fei provides further evidence that the B-O defect is a single defect, rather than two separate defects normally attributed to fast-forming recombination centers and slow-forming recombination centers. Implications of this finding for the nature of the B-O defect are also discussed.

Processing of n{sup +}/p{sup −}/p{sup +} strip detectors with atomic layer deposition (ALD) grown Al{sub 2}O{sub 3} field insulator on magnetic Czochralski silicon (MCz-si) substrates

Energy Technology Data Exchange (ETDEWEB)

Härkönen, J., E-mail: jaakko.harkonen@helsinki.fi [Helsinki Institute of Physics (Finland); Tuovinen, E. [Helsinki Institute of Physics (Finland); VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T. [Helsinki Institute of Physics (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Wu, X. [VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Picosun Oy, Tietotie 3, FI-02150 Espoo Finland (Finland); Li, Z. [School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

2016-08-21

Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n{sup +} segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO{sub 2} interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al{sub 2}O{sub 3}) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current–voltage and capacitance−voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×10{sup 15} n{sub eq}/cm{sup 2} proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

Crystal growth and characterization of calcium metaborate scintillators

Czech Academy of Sciences Publication Activity Database

Fujimoto, Y.; Yanagida, T.; Kawaguchi, N.; Fukuda, K.; Totsuka, D.; Watanabe, K.; Yamazaki, A.; Chani, V.; Nikl, Martin; Yoshikawa, A.

2013-01-01

Roč. 703, MAR (2013), s. 7-10 ISSN 0168-9002 Institutional support: RVO:68378271 Keywords : Czochralski method * single crystal * scintillator * calcium metaborate * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.316, year: 2013

2 inch diameter single crystal growth and scintillation properties of Ce:Gd.sub.3./sub.Al.sub.2./sub.Ga.sub.3./sub.O.sub.12./sub..

Czech Academy of Sciences Publication Activity Database

Kamada, K.; Yanagida, T.; Endo, T.; Tsutumi, K.; Usuki, Y.; Nikl, Martin; Fujimoto, Y.; Fukabori, A.; Yoshikawa, A.

2012-01-01

Roč. 352, č. 1 (2012), s. 88-90 ISSN 0022-0248 Grant - others:AV ČR(CZ) M100100910 Institutional research plan: CEZ:AV0Z10100521 Keywords : Czochralski method * oxides * scintillator materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.552, year: 2012

Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing

International Nuclear Information System (INIS)

Londos, C. A.; Andrianakis, A.; Emtsev, V.; Ohyama, H.

2009-01-01

The annealing behavior of the oxygen and carbon impurities in Czochralski grown silicon (Cz-Si) was investigated in electron- and neutron-irradiated materials. The irradiated samples were subjected to isochronal anneals of up to ∼1000 deg. C, and the evolution of oxygen and carbon concentrations was monitored by means of infrared spectroscopy from the amplitudes of the 1106 and 605 cm -1 bands of the two impurities correspondingly. It was found that the electron irradiation does not affect the temperature of annealing of oxygen, although in the neutron-irradiated samples the oxygen band begins to decay in the spectra at a lower temperature than that in the nonirradiated samples. This behavior could be determined by supersaturation of vacancies mainly liberated from disordered regions in the latter material. This assists the oxygen aggregation process. Regarding carbon evolution, it was found that in the irradiated samples the annealing out of the 605 cm -1 band occurs at a lower temperature than that of the nonirradiated samples. Prior to the onset of decay of the 605 cm -1 band an inverse annealing stage was observed in the irradiated samples, indicating partial restoration of substitutional carbon. The general behavior was discussed with respect to the supersaturation of intrinsic defects, mainly self-interstitials. As a result, large C N (Si I ) M complexes are formed. There are two processes running in parallel: the recovery of substitutional carbon from carbon-related defects and C N (Si I ) M complexes and the transformation of C N (Si I ) M complexes to SiC-based precipitates. Noticeably, in electron-irradiated Ge-doped Si the inverse annealing stage of substitutional carbon is suppressed. Furthermore, our results showed that the Ge doping of Cz-Si of up to 2x10 20 cm -3 does not practically affect the temperature at which oxygen and carbon are completely lost in irradiated Cz-Si:Ge.

Crystal growth and optical properties of Sm:CaNb2O6 single crystal

International Nuclear Information System (INIS)

Di Juqing; Xu Xiaodong; Xia Changtai; Zeng Huidan; Cheng Yan; Li Dongzhen; Zhou Dahua; Wu Feng; Cheng Jimeng; Xu Jun

2012-01-01

Highlights: ► Sm:CaNb 2 O 6 single crystal was grown by the Czochralski method. ► Thermal expansion coefficients and J–O parameters were calculated. ► We found that this crystal had high quantum efficiency of 97%. - Abstract: Sm:CaNb 2 O 6 single crystal has been grown by the Czochralski method. Its high-temperature X-ray powder diffraction, optical absorption, emission spectroscopic as well as lifetime have been studied. Thermal expansion coefficients (α), J–O parameters (Ω i ), radiative lifetime (τ rad ), branching ratios (β) and stimulated emission cross-sections (σ e ) were calculated. The quantum efficiency (η) was calculated to be 97%. The intense peak emission cross section at 610, 658 nm were calculated to be 2.40 × 10 −21 , 2.42 × 10 −21 cm 2 . These results indicate that Sm:CaNb 2 O 6 crystal has potential use in visible laser and photonic devices area.

Factors affecting stress distribution and displacements in crystals III-V grown by Czochralski method with liquid encapsulation

International Nuclear Information System (INIS)

Schvezov, C.E.; Samarasekera, I.; Weinberg, F.

1988-01-01

A mathematical model based on the finite element method for calculating temperature and shear stress distributions in III-V crystals grown by LEC technique was developed. The calculated temperature are in good agreements with the experimental measurements. The shear stress distribution was calculated for several environmental conditions. The results showed that the magnitude and the distribution of shear stresses are highly sensitive to the crystal environment, including thickness and temperature distribution in boron oxides and the gas. The shear stress is also strongly influenced by interface curvature and cystals radius. (author) [pt

Temperature fields in a growing solar silicon crystal

Directory of Open Access Journals (Sweden)

Kondrik A. I.

2012-06-01

Full Text Available The optimal thermal terms for growing by Czochralski method Si single-crystals, suitable for making photoelectric energy converters, has been defined by the computer simulation method. Dependences of temperature fields character and crystallization front form on the diameter of the crystal, stage and speed of growing, and also on correlation between diameter and height of the crystal has been studied.

Optical spectroscopy of Ho{sup 3+}-doped SrWO{sub 4} scheelite crystal

Energy Technology Data Exchange (ETDEWEB)

Li Jianfu; Jia Guohua; Zhu Zhaojie; You Zhenyu; Wang Yan; Wu Baichang; Tu Chaoyang [Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, State Key Laboratory of Structural Chemistry and National Engineering Research Center for Optoelectronic Crystalline Materials, Fuzhou, Fujian 350002 (China)

2007-04-07

Ho{sup 3+}-doped SrWO{sub 4} crystal was grown by the Czochralski method. The polarized absorption and emission spectra together with the fluorescent decay curve were measured at room temperature. The intensity parameters, radiative lifetimes and branching ratios were calculated based on the Judd-Ofelt theory. The stimulated emission cross-sections of the potential laser transitions were determined using the reciprocity method.

Laser profiling of defects in BaWO.sub.4./sub. crystals

Czech Academy of Sciences Publication Activity Database

Remeš, Zdeněk; Boháček, Pavel; Nikl, Martin

2012-01-01

Roč. 23, č. 8 (2012), 1-4 ISSN 0957-0233 R&D Projects: GA MŠk LH12236; GA MŠk LH12186 Institutional research plan: CEZ:AV0Z10100521 Keywords : barium tungstate * laser scattering * defects * Czochralski method Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.435, year: 2012

See Also:physica status solidi (b)physica status solidi (c)Copyright © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimGet Sample CopyFree Online Trial -->Recommend to Your LibrarianSave Title to My ProfileSet E-Mail Alert var homepagelinks = new Array(new Array("Journal Home","/cgi-bin/jhome/40000761",""),new Array("Issues","/cgi-bin/jtoc/40000761/",""),new Array("Early View","/cgi-bin/jeview/40000761/",""),new Array("News","/cgi-bin/jabout/40000761/news/index.html",""),new Array("Reviews","/cgi-bin/jabout/40000761/reviews.html",""),new Array("Read Cover Story","/cgi-bin/jabout/40000761/cover/2231/current.html","e"),new Array("","","s"),new Array("Product Information","/cgi-bin/jabout/40000761/2231_info.html",""),new Array("Editorial Board","/cgi-bin/jabout/40000761/edbd.html",""),new Array("For Authors","/cgi-bin/jabout/40000761/authors.html",""),new Array("For Referees","/cgi-bin/jabout/40000761/refserv.html",""),new Array("Subscribe","http://jws-edcv.wiley.com/jcatalog/JournalsCatalogOrder/JournalOrder?PRINT_ISSN=0031-8965",""),new Array("Contact","/cgi-bin/jabout/40000761/contact.html",""),new Array("Online Submission","http://www.manuscriptxpress.org/osm/",""),new Array("","","x"));writeJournalLinks("", "40000761");issue nav --> Previous Issue | Next Issue >issue nav -->Volume 201, Issue13 (October 2004)Articles in the Current Issue:Rapid Research NoteScintillation properties of lead tungstate crystals doped with the monovalent ion lithium

Science.gov (United States)

Huang, Yanlin; Seo, Hyo Jin; Zhu, Wenliang

2004-10-01

Lithium-doped PbWO4 crystals have been grown by the Czochralski method. Optical absorbance, X-ray excited luminescence, light yield measurements and X-ray pulsed excited decays have been investigated. Li+ doping has a very good uniformity and could enhance the luminescence of PbWO4, give some contributions to the fast decay components.

JPRS Report, Science & Technology, USSR: Materials Science.

Science.gov (United States)

1988-04-25

donor system alters the composition of the impurity coexisting with perovskitic BaTiO so that the eutectic melting point "becomes higher and...free n-Si and p-Si single crystals grown by the Czochralski method and doped with boron or phosphorus to concentrations of lO^- lcA ’ cm-^, also from

Yb3+:Sr3Y2(BO3)4: A potential ultrashort pulse laser crystal

International Nuclear Information System (INIS)

Sun, Shijia; Xu, Jinlong; Wei, Qi; Lou, Fei; Huang, Yisheng; Yuan, Feifei; Zhang, Lizhen; Lin, Zhoubin; He, Jingliang; Wang, Guofu

2015-01-01

Highlights: • A Yb 3+ :Sr 3 Y 2 (BO 3 ) 4 crystal was grown successfully by Czochralski method. • The crystal has wide absorption and emission bandwidth. • 3.47 W continuous wave laser output with a slope efficiency of 29% was obtained. • The results show that the crystal is a promising ultrashort pulse laser material. - Abstract: A Yb 3+ :Sr 3 Y 2 (BO 3 ) 4 crystal was grown successfully by the Czochralski method. The polarized spectral properties and continuous wave laser output of this crystal were investigated in detail. The crystal has larger absorption and emission cross sections compared with many mature Yb 3+ -doped borate crystals. The full width at half maximum of the emission bands around 1023 nm are 69 nm (E//a), 61 nm (E//b) and 65 nm (E//c). 3.47 W continuous wave laser output with a slope efficiency of 29% and an optical conversion efficiency of 24% was obtained. The results reveal that Yb 3+ :Sr 3 Y 2 (BO 3 ) 4 crystal is an excellent candidate for ultrashort pulse laser crystal

Structure and scintillation yield of Ce-doped Al–Ga substituted yttrium garnet

International Nuclear Information System (INIS)

Sidletskiy, Oleg; Kononets, Valerii; Lebbou, Kheirreddine; Neicheva, Svetlana; Voloshina, Olesya; Bondar, Valerii; Baumer, Vyacheslav; Belikov, Konstantin; Gektin, Alexander; Grinyov, Boris; Joubert, Marie-France

2012-01-01

Highlights: ► Range of Y 3 (Al 1−x Ga x ) 5 O 12 :Ce solid solution crystals are grown from melt by the Czochralski method. ► Light yield of mixed crystals reaches 130% of the YAG:Ce value at x ∼ 0.4. ► ∼1% of antisite defects is formed in YGG:Ce, but no evidence of this is obtained for the rest of crystals. -- Abstract: Structure and scintillation yield of Y 3 (Al 1−x Ga x ) 5 O 12 :Ce solid solution crystals are studied. Crystals are grown from melt by the Czochralski method. Distribution of host cations in crystal lattice is determined. Quantity of antisite defects in crystals is evaluated using XRD and atomic emission spectroscopy data. Trend of light output at Al/Ga substitution in Y 3 (Al 1−x Ga x ) 5 O 12 :Ce is determined for the first time. Light output in mixed crystals reaches 130% comparative to Ce-doped yttrium–aluminum garnet. Luminescence properties at Al/Ga substitution are evaluated.

Crystal Growth and Characterization of MT2Si2 Ternary Intermetallics (M = U, RE and T = 3d, 4d, 5d Transition Metals)

NARCIS (Netherlands)

Menovsky, A.A.; Moleman, A.C.; Snel, G.E.; Gortenmulder, T.J.; Palstra, T.T.M.

1986-01-01

Bulk single crystals of the ternary intermetallic compounds UT2Si2 (T = Ni, Pd, Pt and Ru), LaT2Si2 (T = Pd and Rh) and LuPd2Si2 have been grown from the melt with a modified “tri-arc” Czochralski method. The as-grown crystals were characterized by X-ray, microprobe and chemical analyses. The

Top-seed solution growth and characterization of AlSb single crystals for gamma-ray detectors. Final report, 1 October 1994 - 30 September 1995

International Nuclear Information System (INIS)

Witt, A.F.; Becla, P.; Counterman, C.; DiFrancesco, J.; Landahl, G.; Morse, K.; Sanchez, J.

1996-01-01

The ultimate objective of the conducted research is to ascertain the potential of AlSb (in single crystal form) for application as γ-detector material operating at room temperature. To this end approaches to crystal growth were to be developed which permit control of growth parameters affecting critical application specific properties of AlSb. The research was focused on exploration of the effectiveness of the Czochralski method and on the development of methods and procedures leading to AlSb crystals with low free carrier concentration and a high mobility-lifetime product. Conventional melt growth of AlSb by the Czochralski technique (from stoichiometric charges) generally yielded material with high net carrier concentrations and low mobility-lifetime products. Significant improvement in crystal properties was achieved, when operating with non-stoichiometric melts, containing Sb in excess at levels of 3 to 10 mol%, further improvements were obtained when changing ambient argon pressure from atmospheric to 300 psi, and using high purity alumina crucibles which were inductively heated with a graphite susceptor CVD coated with silicon-carbide. Initial efforts to reduce evaporative loss of Sb through application of the LEC technique (liquid encapsulated Czochralski) with conventional encapsulants (B 2 O 3 , LiF, CaF 2 ) failed because of their interaction with the crucible and the AlSb melt. Compensation techniques (based on extrinsic doping) were found to lead to the desired reduction of free carriers in AlSb. Such material, however, exhibits a significant decrease of charge carrier mobility and lifetime. Early termination of this research program prevented optimization of critical materials properties in AlSb and precluded at this time a realistic assessment of the potential of this material for solid state detector applications

Progress in the Development of the Lead Tungstate Crystals for EM-Calorimetry in High-Energy Physics

Science.gov (United States)

Novotny, R. W.; Brinkmann, K.-T.; Borisevich, A.; Dormenev, V.; Houzvicka, J.; Korjik, M.; Zaunick, H.-G.

2017-11-01

Even at present time there is a strong interest and demand for high quality lead tungstate crystals (PbWO4, PWO) for electromagnetic (EM) calorimetry. PWO is implemented into the EM calorimeter of the CMS-ECAL detector at LHC [1] and required for the completion of the PANDA EMC [2] and various ongoing detector projects at Jefferson Lab. The successful mass production of PWO using the Czochralski method was stopped after bankruptcy of the Bogoroditsk Technical Chemical Plant (BTCP) in Russia as major producer so far. The Shanghai Institute of Ceramics, Chinese Academy of Science (China) was considered as an alternative producer using the modified Bridgman method. The company CRYTUR (Turnov, Czech Republic) with good experience in the development and production of different types of inorganic oxide crystals has restarted at the end of 2014 the development of lead tungstate for mass production based on the Czochralski method. An impressive progress was achieved since then. The growing technology was optimized to produce full size samples with the quality meeting the PANDA-EMC specifications for PWO-II. We will present a detailed progress report on the research program in collaboration with groups at Orsay and JLab. The full size crystals will be characterized with respect to optical performance, light yield, kinetics and radiation hardness.

Growth and characterization of air annealing Mn-doped YAG:Ce single crystal for LED

International Nuclear Information System (INIS)

Xiang, Weidong; Zhong, Jiasong; Zhao, Yinsheng; Zhao, Binyu; Liang, Xiaojuan; Dong, Yongjun; Zhang, Zhimin; Chen, Zhaoping; Liu, Bingfeng

2012-01-01

Highlights: ► The YAG:Ce,Mn single crystal was well synthesized by the Czochralski (CZ) method. ► The emission intensity of the sample has been influenced after annealing. ► Annealed in the air at 1200 °C was the most optimal annealing condition. ► The single crystal could be used in the white light LED which emitted by blue light. - Abstract: The growth of Mn-doped YAG:Ce (yttrium aluminum garnet doped cerium) single crystal by the Czochralski (CZ) method and the characterization of its spectroscopy and color-electric parameters are presented. The absorption spectra indicate that the crystal absorbed highly in the 300–500 nm wavelength range. The emission spectrum of the crystal consists of a peak around 538 nm when excited by 460 nm blue light, which prove the YAG:Ce,Mn single crystal could be used in the white light emitting doides (LED). The different charges of Mn ions have different luminescence properties, and the air annealing process for the single crystal would change the concentration of Mn ions with different charges, which could influence the emission intensity of the single crystal.

Oscillations of the crystal-melt interface caused by harmonic oscillations of the pulling rate for the cylindrical phase of crystal growth

Science.gov (United States)

Vasil'ev, M. G.

2017-02-01

A technique for measuring the crystal cross-sectional area with a weight sensor based on the difference between its readings at the extreme rod positions in the stepwise and continuous modes of modulation of the pulling rate is proposed for the low-thermal gradient Czochralski method. A change in the crystallization rate at harmonic oscillations of the pulling rate is estimated with the aim of conserving the quality of the growing crystal for this measurement method.

Development of Auto-Seeding System Using Image Processing Technology in the Sapphire Crystal Growth Process via the Kyropoulos Method

Directory of Open Access Journals (Sweden)

Churl Min Kim

2017-04-01

Full Text Available The Kyropoulos (Ky and Czochralski (Cz methods of crystal growth are used for large-diameter single crystals. The seeding process in these methods must induce initial crystallization by initiating contact between the seed crystals and the surface of the melted material. In the Ky and Cz methods, the seeding process lays the foundation for ingot growth during the entire growth process. When any defect occurs in this process, it is likely to spread to the entire ingot. In this paper, a vision system was constructed for auto seeding and for observing the surface of the melt in the Ky method. An algorithm was developed to detect the time when the internal convection of the melt is stabilized by observing the shape of the spoke pattern on the melt material surface. Then, the vision system and algorithm were applied to the growth furnace, and the possibility of process automation was examined for sapphire growth. To confirm that the convection of the melt was stabilized, the position of the island (i.e., the center of a spoke pattern was detected using the vision system and image processing. When the observed coordinates for the center of the island were compared with the coordinates detected from the image processing algorithm, there was an average error of 1.87 mm (based on an image with 1024 × 768 pixels.

Luminescent and laser properties of Yb Er:GdCa4O(BO3)3: a new crystal for eye-safe 1.5-μm lasers

Science.gov (United States)

Denker, B.; Galagan, B.; Ivleva, L.; Osiko, V.; Sverchkov, S.; Voronina, I.; Hellstrom, J. E.; Karlsson, G.; Laurell, F.

2004-09-01

We present for the first time 1.5-μm laser emission in Yb Er:GdCa4O(BO3)3 (GdCOB). The crystals were grown by the Czochralski method from platinum crucibles. Spectroscopic and laser tests of the crystals are described. A continuous-wave output power of 80 mW was achieved in a monolithic microchip cavity under laser-diode pumping.

Enhancement of microelectronic device performances by photothermal annealing under SiCl4 ambient

International Nuclear Information System (INIS)

Hassen, M.; Ben Jaballah, A.; Hajji, M.; Ezzaouia, H.

2006-01-01

The use of low cost silicon wafers seems to be very attractive for photovoltaic and microelectronic devices. However, this material is widely contaminated by different impurities particularly transitions metals, which deteriorate the lifetimes and the bulk diffusion lengths of the minority charge carriers. One possible way to overcome this undesirable behavior is to include an efficient purification technique in the process of device fabrication. In this work, we present the effect of photothermal treatments of monocrystalline Czochralski silicon substrates under SiCl 4 /N 2 atmosphere using a thin sacrificial porous silicon layer. The main results show a decrease of the resistivity over 40 μm depth. The Hall mobility of the majority charge carriers is improved from 300 to 1417 cm 2 V -1 s -1 . The capacitance-voltage (C-V) characteristics of metal/SiO 2 /Si (MIS) structures indicate a decrease of carrier concentration which confirms the results obtained by Hall Effect and Van Der Pauw method. The reduction of boron concentration in Czochralski silicon may reduce boron- and oxygen related metastable defect centers

Growth by the μ-PD Method and Visible Laser Operation of a Single-Crystal Fiber of Pr3+:KY3F10

Directory of Open Access Journals (Sweden)

Jun Shu

2017-07-01

Full Text Available We report on the first growth, spectroscopy, and visible laser operation of a single-crystal fiber (SCF of KY3F10 (KYF grown by the micro-pulling-down (μ-PD method, doped with Pr3+ ions. This material has a cubic lattice, which makes it appealing for use in the industry. However, KYF crystals are considered difficult to grow with high optical quality, even with well-established methods. Nevertheless, we grew a 50-mm-long SCF of Pr:KYF, which was transparent in its inner part. We studied the spectroscopic features of it in comparison with existing literature and with samples of the same crystal grown by the Czochralski method, and we did not notice any large differences. These characterizations confirmed that is indeed possible to grow high-quality crystals of Pr:KYF by the μ-PD method. Unfortunately, the crystal proved to be more brittle than typical KYF and especially difficult to polish, leading to rough and irregular facets, as evidenced by transmission measurements. Despite these issues, we obtained continuous-wave laser operation in the orange, red, and deep red regions, using a sample carved from the SCF as active medium and an InGaN-based laser diode as pump source, though with lower performances than in existing reports on this crystal.

Paramagnetic resonance of LaGaO3: Mn single crystals grown by floating zone melting

Science.gov (United States)

Vazhenin, V. A.; Potapov, A. P.; Artyomov, M. Yu.; Salosin, M. A.; Fokin, A. V.; Gil'mutdinov, I. F.; Mukhamedshin, I. R.

2016-02-01

The EPR spectrum of Mn-doped lanthanum gallate single crystals grown by floating zone melting with optical heating has been studied. In contrast to the crystals grown according to the Czochralski method, no manganese is found in these crystals even after high-temperature annealing in air. The spectral characteristics of Fe3+ and Gd3+ centers in crystals prepared by various methods have been compared in the rhombohedral phase, and the fourth-rank nondiagonal parameters of the Fe3+ trigonal centers have been determined, as well.

Growth and characterization of air annealing Tb-doped YAG:Ce single crystal for white-light-emitting diode

International Nuclear Information System (INIS)

Gong, Maogao; Xiang, Weidong; Liang, Xiaojuan; Zhong, Jiasong; Chen, Daqin; Huang, Jun; Gu, Guorui; Yang, Cheng; Xiang, Run

2015-01-01

Highlights: • We report preparation of transparent Ce,Tb:YAG single crystal by Czochralski method. • The effect of annealing on Ce,Tb:YAG single crystal had been investigated. • The Ce,Tb:YAG single crystal after annealing exhibited better optical performance. • The Ce,Tb:YAG single crystal could be used as an ideal candidate for WLED. - Abstract: We report the preparation of transparent Ce and Tb co-doped Y 3 Al 5 O 12 single crystal by the Czochralski method. The characterization of the resulting single crystal was accomplished by using X-ray powder diffractometer, scanning electron microscopy and energy dispersive X-ray spectroscopy. Absorption peak of the single crystal at about 460 nm has been obtained from ultraviolet–visible absorption spectrometer and their intensity is changed with different annealing condition. Its optical properties also have been investigated using fluorescence spectrometer. What’s more, its photoelectric parameters were studied by LED fast spectrometer. The constructed single crystal based white-light-emitting diode exhibits a high luminous efficiency of 140.89 lm/W, and a correlated color temperature of 4176 K as well as a color rendering index of 56.7, which reveal the prominent feasibility of the present single crystal material in white-light-emitting diode application

Growth and characterization of air annealing Tb-doped YAG:Ce single crystal for white-light-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Gong, Maogao [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Xiang, Weidong, E-mail: xiangweidong001@126.com [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Liang, Xiaojuan [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Zhong, Jiasong; Chen, Daqin [College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Huang, Jun; Gu, Guorui; Yang, Cheng; Xiang, Run [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China)

2015-08-05

Highlights: • We report preparation of transparent Ce,Tb:YAG single crystal by Czochralski method. • The effect of annealing on Ce,Tb:YAG single crystal had been investigated. • The Ce,Tb:YAG single crystal after annealing exhibited better optical performance. • The Ce,Tb:YAG single crystal could be used as an ideal candidate for WLED. - Abstract: We report the preparation of transparent Ce and Tb co-doped Y{sub 3}Al{sub 5}O{sub 12} single crystal by the Czochralski method. The characterization of the resulting single crystal was accomplished by using X-ray powder diffractometer, scanning electron microscopy and energy dispersive X-ray spectroscopy. Absorption peak of the single crystal at about 460 nm has been obtained from ultraviolet–visible absorption spectrometer and their intensity is changed with different annealing condition. Its optical properties also have been investigated using fluorescence spectrometer. What’s more, its photoelectric parameters were studied by LED fast spectrometer. The constructed single crystal based white-light-emitting diode exhibits a high luminous efficiency of 140.89 lm/W, and a correlated color temperature of 4176 K as well as a color rendering index of 56.7, which reveal the prominent feasibility of the present single crystal material in white-light-emitting diode application.

A DLTS study of hydrogen doped czochralski-grown silicon

Energy Technology Data Exchange (ETDEWEB)

Jelinek, M. [Infineon Technologies Austria AG, 9500 Villach (Austria); Laven, J.G. [Infineon Technologies AG, 81726 Munich (Germany); Kirnstoetter, S. [Institute of Solid State Physics, Graz University of Technology, 8010 Graz (Austria); Schustereder, W. [Infineon Technologies Austria AG, 9500 Villach (Austria); Schulze, H.-J. [Infineon Technologies AG, 81726 Munich (Germany); Rommel, M. [Fraunhofer Institute of Integrated Systems and Devices IISB, 91058 Erlangen (Germany); Frey, L. [Fraunhofer Institute of Integrated Systems and Devices IISB, 91058 Erlangen (Germany); Chair of Electron Devices, FAU Erlangen-Nuremberg, 91058 Erlangen (Germany)

2015-12-15

In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 10–15 μm deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials.

Optical and scintillation characteristics of Gd.sub.2./sub.YAl.sub.2./sub.Ga.sub.3./sub.O.sub.12./sub.:Ce and Lu.sub.2./sub.YAl.sub.2./sub.Ga.sub.3./sub.O.sub.12./sub.:Ce single crystals

Czech Academy of Sciences Publication Activity Database

Chewpraditkul, W.; Sakthong, O.; Pattanaboonmee, N.; Chewpraditkul, We.; Szczesniak, T.; Swiderski, L.; Moszynski, M.; Kamada, K.; Yoshikawa, A.; Nikl, Martin

2017-01-01

Roč. 468, Jun (2017), 395–398 ISSN 0022-0248 R&D Projects: GA ČR GA16-15569S Institutional support: RVO:68378271 Keywords : Ce-doping * Czochralski method * Gd 2 YAl 2 Ga 3 O 12 :Ce * Lu 2 YAl 2 Ga 3 O 12 :Ce * luminescence * scintillator materials Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.751, year: 2016

Influence of photochemical transformations upon optic-spectral characteristics of iodine cadmium crystals with copper dopant

International Nuclear Information System (INIS)

Novosad, S.S.

2000-01-01

The influence of photochemical transformations upon absorption. X-ray, photo- and thermostimulated luminescence of crystals CdI 2 :CuI, CdI 2 :CuI and CdI 2 :CuO grown by Stockbarger - Czochralski method has been studied. The photochemical reactions in crystals of iodine cadmium with the dopant of copper leads to reducing the intensity of X-ray, photo- and thermostimulated luminescence, the appearance of new luminescent centers is not observed

Effect of preliminary annealing of silicon substrates on the spectral sensitivity of photodetectors in bipolar integrated circuits

International Nuclear Information System (INIS)

Blynskij, V.I.; Bozhatkin, O.A.; Golub, E.S.; Lemeshevskaya, A.M.; Shvedov, S.V.

2010-01-01

We examine the results of an effect of preliminary annealing on the spectral sensitivity of photodetectors in bipolar integrated circuits, formed in silicon grown by the Czochralski method. We demonstrate the possibility of substantially improving the sensitivity of photodetectors in the infrared region of the spectrum with twostep annealing. The observed effect is explained by participation of oxidation in the gettering process, where oxidation precedes formation of a buried n + layer in the substrate. (authors)

Spectroscopic properties and quenching processes of Yb3+ in Fluoride single crystals for laser applications

International Nuclear Information System (INIS)

Bensalah, A.; Ito, M.; Guyot, Y.; Goutaudier, C.; Jouini, A.; Brenier, A.; Sato, H.; Fukuda, T.; Boulon, G.

2007-01-01

Spectroscopic characterization is carried out to identify Stark's levels of Yb 3+ transitions in several fluoride crystals grown either by the Czochralski technique or by the laser-heated pedestal growth method. Yb 3+ concentration dependence of the decay time is analyzed in order to understand involved concentration quenching mechanisms. Laser tests under saphire:Ti pumping are presented for all our materials as well as under diode pumping for Yb:CaF 2

Silicon Sheet Growth Development for the Large Area Sheet Task of the Low Cost Solar Array Project. Heat Exchanger Method - Ingot Casting Fixed Abrasive Method - Multi-Wire Slicing

Science.gov (United States)

Schmid, F.; Khattak, C. P.

1978-01-01

Solar cells fabricated from HEM cast silicon yielded up to 15% conversion efficiencies. This was achieved in spite of using unpurified graphite parts in the HEM furnace and without optimization of material or cell processing parameters. Molybdenum retainers prevented SiC formation and reduced carbon content by 50%. The oxygen content of vacuum cast HEM silicon is lower than typical Czochralski grown silicon. Impregnation of 45 micrometers diamonds into 7.5 micrometers copper sheath showed distortion of the copper layer. However, 12.5 micrometers and 15 micrometers copper sheath can be impregnated with 45 micrometers diamonds to a high concentration. Electroless nickel plating of wires impregnated only in the cutting edge showed nickel concentration around the diamonds. This has the possibility of reducing kerf. The high speed slicer fabricated can achieve higher speed and longer stroke with vibration isolation.

Point defects in gallium arsenide characterized by positron annihilation spectroscopy and deep level transient spectroscopy

International Nuclear Information System (INIS)

Mih, R.; Gronsky, R.; Sterne, P.A.

1995-01-01

Positron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. The authors present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot-Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data

Growth and characterization of Nd:CLNGG crystal

Science.gov (United States)

Shi, Z. B.; Zhang, H. J.; Wang, J. Y.; Yu, Y. G.; Wang, Z. P.; Yu, H. H.; Sun, S. Q.; Xia, H. R.; Jiang, M. H.

2009-07-01

The disordered laser crystal neodymium-doped calcium lithium niobium gallium garnet (Nd:CLNGG) was successfully grown by the Czochralski method. Its thermal properties, including the average linear thermal expansion coefficient, thermal diffusion coefficient, specific heat, and thermal conductivity were measured, and continuous-wave (CW) laser performance at 1.06 μm was demonstrated. The maximum power of 1.48 W was achieved with corresponding optical conversion efficiency of 12.4% and slope efficiency of 16.2%.

Spectroscopic properties and quenching processes of Yb{sup 3+} in Fluoride single crystals for laser applications

Energy Technology Data Exchange (ETDEWEB)

Bensalah, A. [Physical Chemistry of Luminescent Materials, Claude Bernard/Lyon1 University, UMR 5620, CNRS Bat. A. Kastler, 10 rue Ampere, 69622 Villeurbanne (France) and Institute for Multidisciplinary Research of Advanced Materials, Tohoku University, Sendai 980-8577 (Japan)]. E-mail: amina-bensalah@enscp.fr; Ito, M. [Physical Chemistry of Luminescent Materials, Claude Bernard/Lyon1 University, UMR 5620, CNRS Bat. A. Kastler, 10 rue Ampere, 69622 Villeurbanne (France); Guyot, Y. [Physical Chemistry of Luminescent Materials, Claude Bernard/Lyon1 University, UMR 5620, CNRS Bat. A. Kastler, 10 rue Ampere, 69622 Villeurbanne (France); Goutaudier, C. [Physical Chemistry of Luminescent Materials, Claude Bernard/Lyon1 University, UMR 5620, CNRS Bat. A. Kastler, 10 rue Ampere, 69622 Villeurbanne (France); Jouini, A. [Physical Chemistry of Luminescent Materials, Claude Bernard /Lyon1 University, UMR 5620, CNRS Bat. A. Kastler, 10 rue Ampere, 69622 Villeurbanne (France); Institute for Multidisciplinary Research of Advanced Materials, Tohoku University, Sendai 980-8577 (Japan); Brenier, A. [Physical Chemistry of Luminescent Materials, Claude Bernard/Lyon1 University, UMR 5620, CNRS Bat. A. Kastler, 10 rue Ampere, 69622 Villeurbanne (France); Sato, H. [Institute for Multidisciplinary Research of Advanced Materials, Tohoku University, Sendai 980-8577 (Japan); Fukuda, T. [Institute for Multidisciplinary Research of Advanced Materials, Tohoku University, Sendai 980-8577 (Japan); Boulon, G. [Physical Chemistry of Luminescent Materials, Claude Bernard /Lyon1 University, UMR 5620, CNRS Bat. A. Kastler, 10 rue Ampere, 69622 Villeurbanne (France)

2007-01-15

Spectroscopic characterization is carried out to identify Stark's levels of Yb{sup 3+} transitions in several fluoride crystals grown either by the Czochralski technique or by the laser-heated pedestal growth method. Yb{sup 3+} concentration dependence of the decay time is analyzed in order to understand involved concentration quenching mechanisms. Laser tests under saphire:Ti pumping are presented for all our materials as well as under diode pumping for Yb:CaF{sub 2}.

Growth and scintillation properties of gadolinium and yttrium orthovanadate crystals

International Nuclear Information System (INIS)

Voloshina, O.V.; Baumer, V.N.; Bondar, V.G.; Kurtsev, D.A.; Gorbacheva, T.E.; Zenya, I.M.; Zhukov, A.V.; Sidletskiy, O.Ts.

2012-01-01

Aiming to explore the possibility of using the undoped rare-earth orthovanadates as scintillation materials, we developed the procedure for growth of gadolinium (GdVO 4 ) and yttrium (YVO 4 ) orthovanadate single crystals by Czochralski method, and determined the optimal conditions of their after-growth annealing. Optical, luminescent, and scintillation properties of YVO 4 and GdVO 4 were discussed versus known literature data. Scintillation characteristics of GdVO 4 were determined for the first time.

Solar technology assessment project. Volume 6: Photovoltaic technology assessment

Science.gov (United States)

Backus, C. E.

1981-04-01

Industrial production of photovoltaic systems and volume of sales are reviewed. Low cost silicon production techniques are reviewed, including the Czochralski process, heat exchange method, edge defined film fed growth, dentritic web growth, and silicon on ceramic process. Semicrystalline silicon, amorphous silicon, and low cost poly-silicon are discussed as well as advanced materials and concentrator systems. Balance of system components beyond those needed to manufacture the solar panels are included. Nontechnical factors are assessed. The 1986 system cost goals are briefly reviewed.

Synchrotron topography of the SrLaGaO4 monocrystals in the white beam

International Nuclear Information System (INIS)

Malinowska, A.; Lefeld-Sosnowska, M.; Wierzbicka, E.; Wieteska, K.; Wierzchowski, W.; Graeff, W.

2005-01-01

Paper presents results of the studies on defects of the crystalline lattice in the SrLaGaO 4 (SLG) monocrystals grown in the Institute of Electronic Materials Technology (ITME), Warsaw (Poland) by the Czochralski method. Studies were performed in the F1 station of the HASYLAB (Desy, Hamburg) using the synchrotron projecting and the sectional topography in the white beam, both transmission and reflection modes. Nature of the defects appearing in the SLG crystals remains unclear and needs further studies [pl

Boron, phosphorus, and gallium determination in silicon crystals doped with gallium

International Nuclear Information System (INIS)

Shklyar, B.L.; Dankovskij, Yu.V.; Trubitsyn, Yu.V.

1989-01-01

When studying IR transmission spectra of silicon doped with gallium in the range of concentrations 1 x 10 14 - 5 x 10 16 cm -3 , the possibility to quantity at low (∼ 20 K) temperatures residual impurities of boron and phosphorus is ascertained. The lower determination limit of boron is 1 x 10 12 cm -3 for a sample of 10 nm thick. The level of the impurities in silicon crystals, grown by the Czochralski method and method of crucible-free zone melting, is measured. Values of boron and phosphorus concentrations prior to and after their alloying with gallium are compared

Towards and FVE-FAC Method for Determining Thermocapillary Effects on Weld Pool Shape

Science.gov (United States)

Canright, David; Henson, Van Emden

1996-01-01

Several practical materials processes, e.g., welding, float-zone purification, and Czochralski crystal growth, involve a pool of molten metal with a free surface, with strong temperature gradients along the surface. In some cases, the resulting thermocapillary flow is vigorous enough to convect heat toward the edges of the pool, increasing the driving force in a sort of positive feedback. In this work we examine this mechanism and its effect on the solid-liquid interface through a model problem: a half space of pure substance with concentrated axisymmetric surface heating, where surface tension is strong enough to keep the liquid free surface flat. The numerical method proposed for this problem utilizes a finite volume element (FVE) discretization in cylindrical coordinates. Because of the axisymmetric nature of the model problem, the control volumes used are torroidal prisms, formed by taking a polygonal cross-section in the (r, z) plane and sweeping it completely around the z-axis. Conservation of energy (in the solid), and conservation of energy, momentum, and mass (in the liquid) are enforced globally by integrating these quantities and enforcing conservation over each control volume. Judicious application of the Divergence Theorem and Stokes' Theorem, combined with a Crank-Nicolson time-stepping scheme leads to an implicit algebraic system to be solved at each time step. It is known that near the boundary of the pool, that is, near the solid-liquid interface, the full conduction-convection solution will require extremely fine length scales to resolve the physical behavior of the system. Furthermore, this boundary moves as a function of time. Accordingly, we develop the foundation of an adaptive refinement scheme based on the principles of Fast Adaptive Composite Grid methods (FAC). Implementation of the method and numerical results will appear in a later report.

Crystal structure, intensity luminescence characteristics and stimulated radiation of disordered gallate LaSr2Ga11O20-Nd3+

International Nuclear Information System (INIS)

Kaminskij, A.A.; Mill', B.V.; Belokoneva, E.L.; Butashin, A.V.; Sarkisov, S.Eh.; Kurbanov, K.; Khodzhabagyan, G.G.

1986-01-01

LnA 2 2+ Ga 11 O 20 and A 3 2+ M 0.5 5+ Ga 10.5 O 20 compounds are synthesized, LaSr 2 Ga 11 O 20 and LaSr 2 Ga 11 O 20 -Nd 3+ monocrystals are grown by Czochralski method. Their X-ray diffraction analysis is conducted, absorption - luminescence characteristics are obtained, stimulated Nd 3+ ion radiation is excited and investigated in two generating channel waves 4 F 3/2 → 4 I 11/2,13/2 at 300 K

CW laser properties of Nd:GdYAG, Nd:LuYAG, and Nd:GdLuAG mixed crystals

Science.gov (United States)

Di, J. Q.; Xu, X. D.; Li, D. Z.; Zhou, D. H.; Wu, F.; Zhao, Z. W.; Xu, J.; Tang, D. Y.

2011-10-01

Three mixed crystals, Nd:GdYAG, Nd:LuYAG, and Nd:GdLuAG, were grown by Czochralski method. We report the continuous-wave (CW) Nd:GdYAG, Nd:LuYAG, and Nd:GdLuAG laser operation under laser diode pumping. The maximum output powers are 4.11, 5.31, and 7.47 W, with slope efficiency of 73.0, 55.3, and 57.1%, respectively. With replacing Lu3+ or Y3+ ions with large Gd3+ ions, the pump efficiency increases.

Polarized spectroscopic properties of Er3+:Gd2SiO5 crystal and evaluation of Er3+:Yb3+:Gd2SiO5 crystal as a 1.55 μm laser medium

International Nuclear Information System (INIS)

Wang, H.; Huang, J.H.; Gong, X.H.; Chen, Y.J.; Lin, Y.F.; Luo, Z.D.; Huang, Y.D.

2016-01-01

An Er 3+ -doped Gd 2 SiO 5 single crystal with high optical quality has been grown by the Czochralski method. Polarized absorption and fluorescence spectra and fluorescence lifetime of the crystal were measured at room temperature. Intensity parameters, spontaneous emission probabilities, fluorescence branching ratios, and radiative lifetimes were estimated on the basis of the Judd–Ofelt theory. Besides, potentiality of 1.55 μm laser emission in an Er 3+ –Yb 3+ co-doped Gd 2 SiO 5 crystal was evaluated.

Growth from the melt of high-quality In2O3 and Ga2O3 single crystals

Energy Technology Data Exchange (ETDEWEB)

Fornari, Roberto; Galazka, Zbigniew; Uecker, Reinhard; Irmscher, Klaus [Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin (Germany)

2013-07-01

Because of their interesting properties semiconducting oxides, in particular Ga{sub 2}O{sub 3} In{sub 2}O{sub 3}, have recently received much attention. However, as they were deposited as films on hetero-substrates their quality was quite poor. The growth of high-quality bulk Ga{sub 2}O{sub 3} and In{sub 2}O{sub 3} and manufacture of the corresponding substrates can allow the deposition of high-quality epilayers with lower residual carrier density and fewer extended defects. For this reason IKZ has undertaken an effort to grow large single crystals of these oxide compounds from the melt. Transparent semiconducting Ga{sub 2}O{sub 3} single crystals with diameter of about 20 mm and 50-60 mm long were grown by the Czochralski method along the b-axis, using an Iridium crucible and a dynamic protective atmosphere to minimize the dissociation of Ga{sub 2}O{sub 3} melt and ingot. In the case of In{sub 2}O{sub 3} the Czochralski technique is not applicable and it was necessary to develop a novel melt growth method. This new method indeed supplied crystals from which oriented substrates could be prepared. In this presentation the melt growth of Ga{sub 2}O{sub 3} and In{sub 2}O{sub 3} single crystals will be reviewed. An important feature of both materials is given by their strong sensitivity to thermal processing: the free carrier concentration and the absorption spectra drastically vary as a function of annealing temperature, duration and ambient. The possible causes are discussed.

Development and melt growth of novel scintillating halide crystals

Science.gov (United States)

Yoshikawa, Akira; Yokota, Yuui; Shoji, Yasuhiro; Kral, Robert; Kamada, Kei; Kurosawa, Shunsuke; Ohashi, Yuji; Arakawa, Mototaka; Chani, Valery I.; Kochurikhin, Vladimir V.; Yamaji, Akihiro; Andrey, Medvedev; Nikl, Martin

2017-12-01

Melt growth of scintillating halide crystals is reviewed. The vertical Bridgman growth technique is still considered as very popular method that enables production of relatively large and commercially attractive crystals. On the other hand, the micro-pulling-down method is preferable when fabrication of small samples, sufficient for preliminary characterization of their optical and/or scintillation performance, is required. Moreover, bulk crystal growth is also available using the micro-pulling-down furnace. The examples of growths of various halide crystals by industrially friendly melt growth techniques including Czochralski and edge-defined film-fed growth methods are also discussed. Finally, traveling molten zone growth that in some degree corresponds to horizontal zone melting is briefly overviewed.

Thermal and optical properties of Tm{sup 3+}: Li{sub 6}Gd(BO{sub 3}){sub 3} crystal: A potential candidate for 1.83 {mu}m lasers

Energy Technology Data Exchange (ETDEWEB)

Ma Xinghua [Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Key Laboratory of Materials Chemistry and Physics, Yangqiao West Road 155, Fuzhou, Fujian 350002 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Li Jianfu; Zhu Zhaojie; You Zhenyu; Wang Yan [Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Key Laboratory of Materials Chemistry and Physics, Yangqiao West Road 155, Fuzhou, Fujian 350002 (China); Tu Chaoyang [Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Key Laboratory of Materials Chemistry and Physics, Yangqiao West Road 155, Fuzhou, Fujian 350002 (China)], E-mail: tcy@fjirsm.ac.cn

2008-10-15

Single crystal of Tm{sup 3+}: Li{sub 6}Gd (BO{sub 3}){sub 3} was grown by the Czochralski method. The heat capacity was measured from 308 to 673 K. The absorption spectra of the crystal in three mutually perpendicular arbitrary directions were measured at room temperature. Based on the Judd-Ofelt theory and the spectra measured in three mutually perpendicular directions, the intensity parameters {omega}{sub t} (t=2, 4, 6), the line strengths, the oscillator strengths, the radiative rates, radiative lifetimes and fluorescent branching ratios were calculated. We calculated the emission cross-section by the reciprocity method and also obtained the gain cross-section.

Radiation damage in lithium-counterdoped N/P silicon solar cells

Science.gov (United States)

Hermann, A. M.; Swartz, C. K.; Brandhorst, H. W., Jr.; Weinberg, I.

1980-01-01

The radiation resistance and low-temperature annealing properties of lithium-counterdoped n(+)-p silicon solar cells are investigated. Cells fabricated from float zone and Czochralski grown silicon were irradiated with 1 MeV electrons and their performance compared to that of 0.35 ohm-cm control cells. The float zone cells demonstrated superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Annealing kinetics were found to lie between first and second order for relatively short times, and the most likely annealing mechanism was found to be the diffusion of lithium to defects with the subsequent neutralization of defects by combination with lithium. Cells with zero lithium gradients exhibited the best radiation resistance.

Crystal growth, spectroscopic and CW laser properties of Nd0.03Lu2.871Gd0.099Al5O12 crystal

Science.gov (United States)

Di, J. Q.; Xu, X. D.; Cheng, S. S.; Li, D. Z.; Zhou, D. H.; Wu, F.; Zhao, Z. W.; Xu, J.

2011-11-01

Nd0.03Lu2.871Gd0.099Al5O12 (Nd:LuGdAG) crystal was grown by the Czochralski method. The absorption, fluorescence spectra and fluorescence lifetime of Nd:LuGdAG crystal at room temperature were investigated for the first time. We reported the continuous-wave (CW) Nd:LuGdAG laser operation under diode pumping. Output power of 1.43 W at 1064 nm was achieved with a slope efficiency of 34.1%. All the results show that Nd:LuGdAG crystal is a promising laser material.

Spectroscopic properties and diode-pumped 1594 nm laser performance of Er:Yb:Li6Y(BO3)3 crystal

Science.gov (United States)

Zhao, Y. W.; Lin, Y. F.; Chen, Y. J.; Gong, X. H.; Luo, Z. D.; Huang, Y. D.

2008-03-01

An Er3+/Yb3+-codoped Li6Y(BO3)3 crystal was grown by the Czochralski method. The polarized absorption spectra and the fluorescence decay curve were recorded. The efficiency of energy transfer from Yb3+ to Er3+ ions was estimated. Quasi-continuous-wave output power of 325 mW at 1594 nm was realized under the absorbed pump power of 10.4 W in a hemispherical cavity. The absorbed pump threshold and slope efficiency of the laser are 6.0 W and 7.2%, respectively.

Radiation accelerated formation of oxygen and carbon related complexes in silicon

International Nuclear Information System (INIS)

Lazrak, A.; Magnea, N.; Pautrat, J.L.

1984-06-01

During the pulling of silicon monocrystals by the Czochralsky method, oxygen is incorporated into the lattice. It is known from early works that low temperature annealings (400-1000 0 C) make this oxygen to precipitate and a number of different defects to be generated. In order to check whether the fast diffusivity of an oxygen silicon interstitial complex has to be taken in consideration it was interesting to examinate the possible role of radiation damage on the formation of oxygen related defects. Experimental results of an experiment are presented and discussed

Growth and continuous-wave laser operation of disordered crystals of Yb3+:NaLa(WO4)2 and Yb3+:NaLa(MoO4)2

Science.gov (United States)

Liu, J.; Cano-Torres, J. M.; Cascales, C.; Esteban-Betegón, F.; Serrano, M. D.; Volkov, V.; Zaldo, C.; Rico, M.; Griebner, U.; Petrov, V.

2005-03-01

Single crystals of disordered NaLa(WO4)2 and NaLa(MoO4)2 doped with Yb3+ are grown by the Czochralski method from the melt. Continuous-wave laser operation with Ti:sapphire laser pumping is demonstrated at room temperature without special cooling. Tunability from 1017 to 1057 nm and from 1015 to 1053 nm is achieved for Yb:NaLa(WO4)2 and Yb:NaLa(MoO4)2, respectively. A maximum output power of 205 mW is obtained with Yb:NaLa(WO4)2.

Polarized spectroscopic properties of Er{sup 3+}:Gd{sub 2}SiO{sub 5} crystal and evaluation of Er{sup 3+}:Yb{sup 3+}:Gd{sub 2}SiO{sub 5} crystal as a 1.55 μm laser medium

Energy Technology Data Exchange (ETDEWEB)

Wang, H. [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); University of Chinese Academy of Sciences, Beijing 100039 (China); Huang, J.H.; Gong, X.H.; Chen, Y.J.; Lin, Y.F.; Luo, Z.D. [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Huang, Y.D., E-mail: huyd@fjirsm.ac.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

2016-10-01

An Er{sup 3+}-doped Gd{sub 2}SiO{sub 5} single crystal with high optical quality has been grown by the Czochralski method. Polarized absorption and fluorescence spectra and fluorescence lifetime of the crystal were measured at room temperature. Intensity parameters, spontaneous emission probabilities, fluorescence branching ratios, and radiative lifetimes were estimated on the basis of the Judd–Ofelt theory. Besides, potentiality of 1.55 μm laser emission in an Er{sup 3+}–Yb{sup 3+} co-doped Gd{sub 2}SiO{sub 5} crystal was evaluated.

Design for measurement system of Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with the Ge detector

International Nuclear Information System (INIS)

Mori, Kazuteru; Uedono, Akira; Tanigawa, Shoichiro; Nakai, Katsuhiko

1998-01-01

The measurement system for Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with a Ge detector was developed. The principle of measurement system with the coincidence technique between the NaI detector and the Ge detector was described. Application of the system for the detection of vacancy-type defects introduced by electron irradiation in Czochralski-(Cz) grown Si was shown. Detail in the difference between the Doppler broadening profiles for Cz-Si and Si grown by the floating-zone method was also obtained. (author)

Design for measurement system of Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with the Ge detector

Energy Technology Data Exchange (ETDEWEB)

Mori, Kazuteru; Uedono, Akira; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Nakai, Katsuhiko

1998-08-01

The measurement system for Doppler broadening profiles with the coincidence technique using a NaI detector in colinear geometry with a Ge detector was developed. The principle of measurement system with the coincidence technique between the NaI detector and the Ge detector was described. Application of the system for the detection of vacancy-type defects introduced by electron irradiation in Czochralski-(Cz) grown Si was shown. Detail in the difference between the Doppler broadening profiles for Cz-Si and Si grown by the floating-zone method was also obtained. (author)

Crystal growth, structure, defects, mechanical and spectral properties of Nd{sub 0.01}:Gd{sub 0.89}La{sub 0.1}NbO{sub 4} mixed crystal

Energy Technology Data Exchange (ETDEWEB)

Ding, Shoujun; Lu, Wancheng; Xu, Jinrui [Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei, Anhui Province (China); University of Science and Technology of China, Hefei (China); Zhang, Qingli; Luo, Jianqiao; Liu, Wenpeng; Sun, Guihua; Sun, Dunlu [Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei, Anhui Province (China)

2017-10-15

A novel mixed laser crystal of Nd:GdLaNbO{sub 4} (Nd:GLNO) was grown successfully by conventional Czochralski method. The unit cell parameters were obtained by Rietveld refinement method. The density of the as-grown crystal was measured by Archimedean buoyancy method and calculated in theory. Absorption spectrum of Nd:GLNO crystal was recorded at room temperature, and 11 absorption peaks were assigned. The defects of Nd:GLNO crystal were revealed by using chemical etching method with phosphoric acid as etchant. The mechanical properties (including hardness, yield strength, elastic stiffness constant, fracture toughness and brittleness index) were systemically estimated based on Vickers hardness test. All these obtained results play a quite important role in further investigation of Nd:GLNO crystal. (orig.)

Influence of Nd dopants on lattice parameters and thermal and elastic properties in YVO4 single crystals

International Nuclear Information System (INIS)

Kucytowski, J.; Wokulska, K.; Kazmierczak-Balata, A.; Bodzenta, J.; Lukasiewicz, T.; Hofman, B.; Pyka, M.

2008-01-01

The influence of neodymium doping on YVO 4 single crystals has been studied. The crystals were grown by the Czochralski method. One of them was pure YVO 4 and the others were doped with neodymium (YVO 4 :Nd) at various concentrations of Nd = 0.3-3.0 at.%. The changes of the lattice parameters were determined by the Bond's method [W.L. Bond, Acta Cryst. 13 (1960) 814]. The thermal diffusivity and the velocity of ultrasound using the photothermal method with mirage effect and the pulse echo method [J. Bodzenta, M. Pyka, J. Phys. IV France 137 (2006) 259] were measured. In the examined crystals, it was found that the lattice parameters increase while the thermal diffusivity decreases with increasing concentration of Nd atoms

Resistivity distribution of silicon single crystals using codoping

Science.gov (United States)

Wang, Jong Hoe

2005-07-01

Numerous studies including continuous Czochralski method and double crucible technique have been reported on the control of macroscopic axial resistivity distribution in bulk crystal growth. The simple codoping method for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. Wang [J. Crystal Growth 275 (2005) e73] demonstrated using numerical analysis and by experimental results that the axial specific resistivity distribution can be modified in melt growth of silicon crystals and relatively uniform profile is possible by B-P codoping method. In this work, the basic characteristic of 8 in silicon single crystal grown using codoping method is studied and whether proposed method has advantage for the silicon crystal growth is discussed.

Electronic structure of α-SrB4O7: experiment and theory

International Nuclear Information System (INIS)

Atuchin, V V; Kesler, V G; Zaitsev, A I; Molokeev, M S; Aleksandrovsky, A S; Kuzubov, A A; Ignatova, N Y

2013-01-01

The investigation of valence band structure and electronic parameters of constituent element core levels of α-SrB 4 O 7 has been carried out with x-ray photoemission spectroscopy. Optical-quality crystal α-SrB 4 O 7 has been grown by the Czochralski method. Detailed photoemission spectra of the element core levels have been recorded from the powder sample under excitation by nonmonochromatic Al Kα radiation (1486.6 eV). The band structure of α-SrB 4 O 7 has been calculated by ab initio methods and compared to XPS measurements. It has been found that the band structure of α-SrB 4 O 7 is weakly dependent on the Sr-related states. (paper)

Characterizing Surfaces of the Wide Bandgap Semiconductor Ilmenite with Scanning Probe Microcopies

Science.gov (United States)

Wilkins, R.; Powell, Kirk St. A.

1997-01-01

Ilmenite (FeTiO3) is a wide bandgap semiconductor with an energy gap of about 2.5eV. Initial radiation studies indicate that ilmenite has properties suited for radiation tolerant applications, as well as a variety of other electronic applications. Two scanning probe microscopy methods have been used to characterize the surface of samples taken from Czochralski grown single crystals. The two methods, atomic force microscopy (AFM) and scanning tunneling microscopy (STM), are based on different physical principles and therefore provide different information about the samples. AFM provides a direct, three-dimensional image of the surface of the samples, while STM give a convolution of topographic and electronic properties of the surface. We will discuss the differences between the methods and present preliminary data of each method for ilmenite samples.

Low temperature luminescence and charge carrier trapping in a cryogenic scintillator Li{sub 2}MoO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Spassky, D.A., E-mail: deris2002@mail.ru [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation); Nagirnyi, V. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Savon, A.E. [Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991 Moscow (Russian Federation); Kamenskikh, I.A. [Physics Faculty, Moscow State University, 119991 Moscow (Russian Federation); Barinova, O.P.; Kirsanova, S.V. [D. Mendeleyev University of Chemical Technology of Russia, 125047 Moscow (Russian Federation); Grigorieva, V.D.; Ivannikova, N.V.; Shlegel, V.N. [Nikolaev Institute of Inorganic Chemistry, SB RAS, 630090 Novosibirsk (Russian Federation); Aleksanyan, E. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); A.Alikhanyan National Science Laboratory, 2 Br. Alikhanyan Str., 0036 Yerevan (Armenia); Yelisseyev, A.P. [Sobolev Institute of Geology and Mineralogy, SB RAS, 630090 Novosibirsk (Russian Federation); Belsky, A. [Institute of Light and Matter, CNRS, University Lyon1, 69622 Villeurbanne (France)

2015-10-15

The luminescence and optical properties of promising cryogenic scintillator Li{sub 2}MoO{sub 4} were studied in the temperature region of 2–300 K. The data on luminescence spectra and decay characteristics, excitation spectra, thermostimulated luminescence curves and spectra as well as transmission and reflectivity spectra are presented for the single crystals grown by two different procedures, the conventional Czochralski method and the low-temperature gradient Czochralski technique. The bandgap of Li{sub 2}MoO{sub 4} is estimated from the analysis of transmission, luminescence excitation and reflectivity spectra. Up to three luminescence bands with the maxima at 1.98, 2.08 and 2.25 eV are detected in the emission spectra of crystals and their origin is discussed. In the thermoluminescence curves of both studied crystals, two high-intensity peaks were observed at 22 and 42 K, which are ascribed to the thermal release of self-trapped charge carriers. The coexistence of self-trapped electrons and holes allows one to explain the poor scintillation light yield of Li{sub 2}MoO{sub 4} at low temperatures. - Highlights: • Single crystals of Li{sub 2}MoO{sub 4} were grown by two methods. • The transparency cutoff (~4.3 eV) and bandgap values (<4.9 eV) are estimated. • The emission 2.08 eV is ascribed to self-trapped excitons and quenches at T>7 K. • Shallow traps considerably influence the energy transfer to emission centres. • Co-existence of self-trapped holes and electrons results in a low light yield.

Modelling of thermal field and point defect dynamics during silicon single crystal growth using CZ technique

Science.gov (United States)

Sabanskis, A.; Virbulis, J.

2018-05-01

Mathematical modelling is employed to numerically analyse the dynamics of the Czochralski (CZ) silicon single crystal growth. The model is axisymmetric, its thermal part describes heat transfer by conduction and thermal radiation, and allows to predict the time-dependent shape of the crystal-melt interface. Besides the thermal field, the point defect dynamics is modelled using the finite element method. The considered process consists of cone growth and cylindrical phases, including a short period of a reduced crystal pull rate, and a power jump to avoid large diameter changes. The influence of the thermal stresses on the point defects is also investigated.

Growth and laser action of Yb: YVO4 crystals with low Yb doping concentration

Science.gov (United States)

Zhong, Degao; Teng, Bing; Li, Jianhong; Zhang, Shiming; Zhang, Bingtao; Wang, Chao; Tian, Xueping; Liu, Junhai

2012-11-01

Yb: YVO4 single crystals with low doping concentrations of Yb3+ less than 0.3 at% were grown using the Czochralski method. The polarized absorption spectra were measured at room temperature. Strong anisotropy exists in the absorption spectra, resulting in almost entirely different features for π-polarization and σ-polarization. The laser emission spectrum and relationship curve between the output power and absorbed pump power (Pabs) were measured. The continuous-wave laser action of Yb: YVO4 single crystal in a range of 1020.4-1026.3 nm was realized by using a high-power diode laser as the pump source.

Crystal growth, spectroscopic and laser properties of Tm:LuAG crystal

Science.gov (United States)

Xu, X. D.; Wang, X. D.; Lin, Z. F.; Cheng, Y.; Li, D. Z.; Cheng, S. S.; Wu, F.; Zhao, Z. W.; Gao, C. Q.; Gao, M. W.; Xu, J.

2009-11-01

Tm:Lu3Al5O12 (Tm:LuAG) crystal was grown by the Czochralski method. The segregation coefficient was measured by Inductively Coupled Plasma Atomic Emission Spectrometer. The cell parameters were analyzed with X-ray powder diffraction experiments. The absorption and fluorescence spectra of Tm:LuAG crystal at room temperature were investigated. With a 20 W fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Tm:LuAG crystal was demonstrated. The maximum output power at 2020 nm was obtained to be 3.04 W, and the slope efficiency was 25.3%.

High-power femtosecond pulse generation in a passively mode-locked Nd:SrLaAlO4 laser

Science.gov (United States)

Liu, Shan-De; Dong, Lu-Lu; Zheng, Li-He; Berkowski, Marek; Su, Liang-Bi; Ren, Ting-Qi; Peng, Yan-Dong; Hou, Jia; Zhang, Bai-Tao; He, Jing-Liang

2016-07-01

A high optical quality Nd:SrLaAlO4 (Nd:SLA) crystal was grown using the Czochralski method and showed broad fluorescence spectrum with a full width at half maximum value of 34 nm, which is beneficial for generating femtosecond laser pulses. A stable diode-pumped passively mode-locked femtosecond Nd:SLA laser with 458 fs pulse duration was achieved for the first time at a central wavelength of 1077.9 nm. The average output power of the continuous-wave mode-locked laser was 520 mW and the repetition rate was 78.5 MHz.

Phase diagrams of KY(WO4)2-KEr(WO4)2, KGd(WO4)2-KEr(WO4)2 systems and single crystal growth for some tungstates

International Nuclear Information System (INIS)

Yudanova, L.I.; Pavlyuk, A.A.; Potapova, O.G.

1992-01-01

Phase diagrams of the KY(WO 4 ) 2 -KEr(WO 4 ) 2 , KGd(WO 4 ) 2 -KEr(WO 4 ) 2 systems were studied by differential thermal and X-ray diffraction analyses. Continuous variety of solid solutions are in the KY(WO 4 ) 2 -KEr(WO 4 ) 2 system. They occurred just as in the area of alphaso beta-modifications. Limited areas of the solid solutions based on components were in the KGd(WO 4 ) 2 -KEr(WO 4 ) 2 system. Monocrystals of potassium-yttrium and potassium-gadolinium tungstates activated by erbium were grown using modified low-gradient Czochralski method

Crystal growth, spectral and laser properties of Nd:LSAT single crystal

Science.gov (United States)

Hu, P. C.; Yin, J. G.; Zhao, C. C.; Gong, J.; He, X. M.; Zhang, L. H.; Liang, X. Y.; Hang, Y.

2011-10-01

Nd:(La, Sr)(Al, Ta)O3 (Nd:LSAT) crystal was grown by the Czochralski method. The absorption and fluorescence spectra of Nd:LSAT crystal at room temperature were investigated. With a fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Nd:LSAT crystal was demonstrated. The result of diode-pumped laser operation of Nd:LSAT crystal single crystal is reported for what is to our knowledge the first time. The maximum output power at 1064 nm was obtained to be 165 mW under the incident pump power of 3 W, with the slope efficiency 10.9%.

Experimental and theoretical investigation of lattice defect structures in a series of Zn, Fe-doped nonstoichiometric lithium niobate

International Nuclear Information System (INIS)

Guo Fengyun; Lue Qiang; Sun Liang; Li Hongtao; Zhen Xihe; Xu Yuheng; Zhao Liancheng

2006-01-01

A series of the double doped lithium niobate (LiNbO 3 , LN) single crystals had been grown by Czochralski method. The Curie temperatures of various concentrations doped or [Li]/[Nb] ratio LN crystals measured by differential thermal analysis (DTA) were discussed to investigate their defect structures with Safaryan et al. new approach about LN lattice defect structure using Curie temperatures calculated. Infrared transmission spectra of various concentrations doped were used to compare the investigation above. The results show that the lithium vacancy model is the more probable to describe the lattice defect structure of the doped LN single crystal

Thermal neutron imaging with rare-earth-ion-doped LiCaAlF6 scintillators and a sealed 252Cf source

International Nuclear Information System (INIS)

Kawaguchi, Noriaki; Yanagida, Takayuki; Fujimoto, Yutaka; Yokota, Yuui; Kamada, Kei; Fukuda, Kentaro; Suyama, Toshihisa; Watanabe, Kenichi; Yamazaki, Atsushi; Chani, Valery; Yoshikawa, Akira

2011-01-01

Thermal neutron imaging with Ce-doped LiCaAlF 6 crystals has been performed. The prototype of the neutron imager using a Ce-doped LiCaAlF 6 scintillating crystal and a position sensitive photomultiplier tube (PSPMT) which had 64 multi-channel anode was developed. The Ce-doped LiCaAlF 6 single crystal was grown by the Czochralski method. A plate with dimensions of a diameter of 50x2 mm 2 was cut from the grown crystal, polished, and optically coupled to PSPMT by silicone grease. The 252 Cf source ( 6 .

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

Science.gov (United States)

Yoo, H. I.; Iles, P. A.; Tanner, D. P.

1979-01-01

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues

Science.gov (United States)

Jurisch, M.; Börner, F.; Bünger, Th.; Eichler, St.; Flade, T.; Kretzer, U.; Köhler, A.; Stenzenberger, J.; Weinert, B.

2005-02-01

The paper reviews the progress made in crystal growth of semi-insulating GaAs by liquid encapsulation Czochralski and vertical gradient freeze techniques during the last few years under the continuous need for cost reduction of the production process.

VV and VO2 defects in silicon studied with hybrid density functional theory

KAUST Repository

Christopoulos, Stavros Richard G; Wang, Hao; Chroneos, Alexander I.; Londos, Charalampos A.; Sgourou, Efstratia N.; Schwingenschlö gl, Udo

2014-01-01

The formation of VO (A-center), VV and VO2 defects in irradiated Czochralski-grown silicon (Si) is of technological importance. Recent theoretical studies have examined the formation and charge states of the A-center in detail. Here we use density

Application of positron annihilation techniques for semiconductor studies

International Nuclear Information System (INIS)

Karwasz, G.P.; Zecca, A.; Brusa, R.S.; Pliszka, D.

2004-01-01

Positron annihilation techniques, being non-destructive, allowing depth profiling down to a few micrometers and detecting open-volume defects (vacancies, dislocations etc.) at single ppm concentrations constitute a valuable and complementary method, compared to other solid-state-physics studies. We give examples of investigation in the field of semiconductors with different techniques, both with and without use of positron low-energy beams. The Doppler broadening of the 511 keV annihilation line method and the slow positron beam were used to study helium-implanted silicon and the surface reduction processes in semiconducting glasses. The positron lifetime technique and coincidence spectra of the Doppler broadening were used for systematic studies of metals and semiconductors. Doppler-coincidence method was then used to identify the kinetics of oxygen precipitates in Czochralski-grown silicon

Growth and luminescent properties of Yb3+--doped oxide single crystals for scintillator application

International Nuclear Information System (INIS)

Yoshikawa, A.; Ogino, H.; Shim, J.B.; Nikl, M.; Solovieva, N.; Fukuda, T.

2004-01-01

Rod-shaped (Lu 1-x Yb x ) 3 Al 5 O 12 with x=0.05, 0.15, 0.30 and (Y 1-x Yb x )AlO 3 with x=0.05, 0.10, 0.30 single crystals were grown by the micro-pulling-down method. Edge-defined film-fed growth method was used to prepare (Y 0.9 Yb 0.1 )VO 4 crystal, while Ca 8 (La 1.98 Yb 0.02 )(PO 4 ) 6 O 2 crystal was grown by the Czochralski method. Luminescence of these crystals was studied with main attention paid to the charge transfer emission of Yb 3+ . Temperature tuned decay times in the time scale of units--tens of nanosecond was measured as a feature possibly interesting for an application in scintillation detectors in positron emission tomography

Pyro processing technology at KAERI

International Nuclear Information System (INIS)

Lee, Hansoo; Kim, Eungho; Park, Seongwon

2008-01-01

KAERI has studied on the pyro processing as a spent fuel treatment method for more than decade. The process includes voloxidation, electroreduction, electrorefining with solid and liquid cathodes, and waste salt treatment. Each process has developed its own characteristics which are suitable for treating high mass flow. In the electroreduction process, a magnesia filter was used for integrated electrolytic reduction. More than 99% of reduction yield was achieved. Electrorefining process employs the continuous operation concept. Uranium deposits on the surface of graphite cathode and it is stripped off spontaneously to the bottom of the reactor, which allows continuous operation. Crystallization method was used for treating waste salt. Pure salt is recovered by Czochralski method or zone freezing method and subsequently recycled to the reactor. These advanced technologies ensure the operation of pyro processing in a larger scale

Growth of optical grade germanium crystals

International Nuclear Information System (INIS)

Waris, M.; Akhtar, M.J.; Mehmood, N.; Ashraf, M.; Siddique, M.

2011-01-01

A novel design of Czochralski( CZ ) growth station in a low frequency induction furnace is described and growth of optical grade Ge crystal as a test material is performed achieving a flat solid-liquid interface shape. Grown Ge crystals are annealed in air at 450 -500 deg. C for 4 hrs and then characterized by determination of crystallographic orientation by Laue (back-reflection of X-rays) method, dislocation density studies by etch-pits formation, measuring electrical resistivity by 4-probe technique, conductivity type determination by hot probe method, measurement of hardness on Moh's scale and optical transmission measurement in IR region. The results obtained are compared to those reported in the literature. The use of this growth station for other materials is suggested. (author)

Growth and continuous-wave laser operation of disordered crystals of Yb3+:NaLa(WO4)2 and Yb3+:NaLa(MoO4)2

International Nuclear Information System (INIS)

Liu, J.; Rico, M.; Griebner, U.; Petrov, V.; Cano-Torres, J.M.; Cascales, C.; Esteban-Betegon, F.; Serrano, M.D.; Volkov, V.; Zaldo, C.

2005-01-01

Single crystals of disordered NaLa(WO 4 ) 2 and NaLa(MoO 4 ) 2 doped with Yb 3+ are grown by the Czochralski method from the melt. Continuous-wave laser operation with Ti:sapphire laser pumping is demonstrated at room temperature without special cooling. Tunability from 1017 to 1057 nm and from 1015 to 1053 nm is achieved for Yb:NaLa(WO 4 ) 2 and Yb:NaLa(MoO 4 ) 2 , respectively. A maximum output power of 205 mW is obtained with Yb:NaLa(WO 4 ) 2 . (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Magnetohydrodynamic research in fusion blanket engineering and metallurgical processing

International Nuclear Information System (INIS)

Tokuhiro, A.

1991-11-01

A review of recent research activities in liquid metal magnetohydrodynamics (LM-MHDs) is presented in this article. Two major reserach areas are discussed. The first topic involves the thermomechanical design issues in a proposed tokamak fusion reactor. The primary concerns are in the magneto-thermal-hydraulic performance of a self-cooled liquid metal blanket. The second topic involves the application of MHD in material processing in the metallurgical and semiconductor industries. The two representative applications are electromagnetic stirring (EMS) of continuously cast steel and the Czochralski (CZ) method of crystal growth in the presence of a magnetic field. (author) 24 figs., 10 tabs., 136 refs

Deep donor-acceptor pair recombination in bulk GaP studied by ODMR and DLTS techniques

International Nuclear Information System (INIS)

Awadelkarim, O.O.; Godlewski, M.; Monemar, B.

1989-01-01

Deep level transient spectroscopy (DLTS) and optically detected magnetic resonance (ODMR) are applied to study deep defect levels with photoluminescence bands observed in the near infrared region in S- and Te-doped bulk GaP crystals grown by the liquid encapsulated Czochralski method. The ODMR data suggest that the emission bands with maxima observed at 8000-8200 A (∼ 1.5 eV), common to both materials, and at 7750 A (1.6 eV), present only in GaP:Te, are due to donor-acceptor pair recombinations. The latter band, reported here for the first time, is tentatively associated with deep states observed by DLTS. (author) 19 refs., 5 figs

Porous silicon damage enhanced phosphorus and aluminium gettering of p-type Czochralski silicon

International Nuclear Information System (INIS)

Hassen, M.; Ben Jaballah, A.; Hajji, M.; Rahmouni, H.; Selmi, A.; Ezzaouia, H.

2005-01-01

In this work, porous silicon damage (PSD) is presented as a simple sequence for efficient external purification techniques. The method consists of using thin nanoporous p-type silicon on both sides of the silicon substrates with randomly hemispherical voids. Then, two main sample types are processed. In the first type, thin aluminium layers (≥1 μm) are thermally evaporated followed by photo-thermal annealing treatments in N 2 atmosphere at one of several temperatures ranging between 600 and 800 deg. C. In the second type, phosphorus is continually diffused in N 2 /O 2 ambient in a solid phase from POCl 3 solution during heating at one of several temperatures ranging between 750 and 1000 deg. C for 1 h. Hall Effect and Van Der Pauw methods prove the existence of an optimum temperature in the case of phosphorus gettering at 900 deg. C yielding a Hall mobility of about 982 cm 2 V -1 s -1 . However, in the case of aluminium gettering, there is no gettering limit in the as mentioned temperature range. Metal/Si Schottky diodes are elaborated to clarify these improvements. In this study, we demonstrate that enhanced metal solubility model cannot explain the gettering effect. The solid solubility of aluminium is higher than that of P atoms in silicon; however, the device yield confirms the effectiveness of phosphorus as compared to aluminium

Process research of non-Czochralski silicon material

Science.gov (United States)

Campbell, R. B.

1986-01-01

Simultaneous diffusion of liquid precursors containing phosphorus and boron into dendritic web silicon to form solar cell structures was investigated. A simultaneous junction formation techniques was developed. It was determined that to produce high quality cells, an annealing cycle (nominal 800 C for 30 min) should follow the diffusion process to anneal quenched-in defects. Two ohm-cm n-base cells were fabricated with efficiencies greater than 15%. A cost analysis indicated that the simultansous diffusion process costs can be as low as 65% of the costs of the sequential diffusion process.

Study of defects created in silicon during thermal annealings - Correlation with the presence of oxygen

International Nuclear Information System (INIS)

Olivier, Michel

1975-01-01

Defects generation and precipitation phenomena in Czochralski silicon crystals annealed ten of hours at 1000 C have been observed. The defects (perfect dislocation loops emitted by semi-coherent precipitates, Frank loops in correlation with coherent precipitates) are studied by Transmission Electron Microscopy, X-Ray Topography and chemical etching. The generation of defects is connected to the precipitation of interstitial oxygen as it is shown by studying the infrared absorption at 9 μm. We present a lot of experimental results which indicates that the precipitates are SiO 2 clusters; in particular, we show that this hypothesis can explain the presence, after annealing, of an infrared absorption band at 8,2 μm. Some results on Czochralski silicon crystals annealed at 1150 deg. C and 1250 deg. C are then presented. In particular, X-Ray Topography studies show the presence of large (∼100 μm) Frank loops which seem connected to oxygen precipitation. (author) [fr

Procedure for growing Bi4Ge3O12 bismuth germanate single crystals with suppressed growth defects

International Nuclear Information System (INIS)

Zikmund, J.; Blazek, K.; Jarolimek, O.; Horak, J.

1991-01-01

The method developed allows high-quality scintillator material to be grown reproducibly by the Czochralski method. The crystals attain diameters up to 80 mm and lengths up to 200 mm. The growth is performed on instruments equipped with devices for continuous measurement of weight increments of the growing crystals with a precision better than 10 mg. The growth parameters are controlled with a computer and based on actual data. The crystals are grown using an axial temperature gradient within the range of 25 to 35 degC/cm and a constant drawing rate within the range of 0.5 to 1.2 mm/h. An interface shape suitable for the suppression of defect development is achieved through a combination of the weight increment and rotation of the crystal. (M.D.)

Rare-Earth Calcium Oxyborate Piezoelectric Crystals ReCa4O(BO33: Growth and Piezoelectric Characterizations

Directory of Open Access Journals (Sweden)

Fapeng Yu

2014-07-01

Full Text Available Rare-earth calcium oxyborate crystals, ReCa4O(BO33 (ReCOB, Re = Er, Y, Gd, Sm, Nd, Pr, and La , are potential piezoelectric materials for ultrahigh temperature sensor applications, due to their high electrical resistivity at elevated temperature, high piezoelectric sensitivity and temperature stability. In this paper, different techniques for ReCOB single-crystal growth are introduced, including the Bridgman and Czochralski pulling methods. Crystal orientations and the relationships between the crystallographic and physical axes of the monoclinic ReCOB crystals are discussed. The procedures for dielectric, elastic, electromechanical and piezoelectric property characterization, taking advantage of the impedance method, are presented. In addition, the maximum piezoelectric coefficients for different piezoelectric vibration modes are explored, and the optimized crystal cuts free of piezoelectric cross-talk are obtained by rotation calculations.

Purification and growth of LiF by induction heating furnace with electronic temperature control

International Nuclear Information System (INIS)

Faria Junior, R.N. de

1985-01-01

An eletronic power control system for a radio frequency generator and a quartz vacuum furnace heated by induction were developed. This furnace was employed for the growth of single crystals and purification of starting materials. A lithium fluoride single crystal was grown by the Czochralski technique in order to test the temperature control and the quartz furnace. An X-ray diffraction analysis of the crystal revealed the monocrystallinity high optical quality of the crystal obtained. Lithium fluoride of 95% purity prepared by Nuclemon starting material was purified by a vertical Bridgmann method. The emission spectrographic analysis of the purified crystal demonstrated the segregation of impurities. This study showed that the purification by this method of starting materials produced by local industry resulted in a crystal 99.9% pure in the first crystallization. (Author) [pt

Single Grain TFTs for High Speed Flexible Electronics

NARCIS (Netherlands)

Baiano, A.

2009-01-01

SG-TFTs fabricated by the ?-Czochralski process have already reached a performance as high as that of SOI MOSFET devices. However, one of the most important and challenging goals is extending SG-TFT technology to reach a higher level of performance than that achieved with SOI technology. This thesis

High-field EPR spectroscopy of thermal donors in silicon

DEFF Research Database (Denmark)

Dirksen, R.; Rasmussen, F.B.; Gregorkiewicz, T.

1997-01-01

Thermal donors generated in p-type boron-doped Czochralski-grown silicon by a 450 degrees C heat treatment have been studied by high-field magnetic resonance spectroscopy. In the experiments conducted at a microwave frequency of 140 GHz and in a magnetic field of approximately 5 T four individual...

Optical and structural characterization of KBr crystals doped cadmium bromide (CdBr2)

International Nuclear Information System (INIS)

Bensouici, A.; Plaza, J.L.; Dieguez, E.; Halimi, O.; Guerbous, L.; Sebais, M.

2010-01-01

In this paper we demonstrate the presence of CdBr 2 and cadmium aggregates in KBr matrix during Czochralski growth of KBr crystals. The chemical decomposition of CdBr 2 due to high temperature of crystallisation and reformation of cadmium bromide seems to be responsible for this effect.

Phase diagram of the Ge-rich of the Ba–Ge system and characterisation of single-phase BaGe4

International Nuclear Information System (INIS)

Prokofieva, Violetta K.; Pavlova, Lydia M.

2014-01-01

Highlights: • The Ba-Ge phase diagram for the range 50–100 at.% Ge was constructed. • Single-phase BaGe 4 grown by the Czochralski method was characterised. • A phenomenological model for a liquid-liquid phase transition is proposed. - Abstract: The Ba–Ge binary system has been investigated by several authors, but some uncertainties remain regarding phases with Ba/Ge ⩽ 2. The goal of this work was to resolve the uncertainty about the current phase diagram of Ba–Ge by performing DTA, X-ray powder diffraction, metallographic and chemical analyses, and measurements of the electrical conductivity and viscosity. The experimental Ba–Ge phase diagram over the composition range of 50–100 at.% Ge was constructed from the cooling curves and single-phase BaGe 4 grown by the Czochralski crystal pulling method was characterised. Semiconducting BaGe 4 crystallised peritectically from the liquid phase near the eutectic. In the liquid state, the caloric effects were observed in the DTA curves at 1050 °C where there are no definite phase lines in the Ba–Ge phase diagram. These effects are confirmed by significant changes in the viscosity and electrical conductivity of a Ba–Ge alloy with eutectic composition at this temperature. A phenomenological model based on two different approaches, a phase approach and a chemical approach, is proposed to explain the isothermal liquid–liquid phase transition observed in the Ba–Ge system from the Ge side. Our results suggest that this transition is due to the peritectic reactions in the liquid phase. This reversible phase transition results in the formation of precursors of various metastable clathrate phases and is associated with sudden changes in the structure of Ba–Ge liquid alloys. Characteristics of both first- and second-order phase transitions are observed. Charge transfer appears to play an important role in this transition

SPICE Modeling of Single-Grain Si TFTs using BSIMSOI

NARCIS (Netherlands)

Baiano, A.; Ishihara, R.; Saputra, N.; Long, J.; Karaki, N.; Inoue, S.; Metselaar, W.; Beenakker, C.I.M.

2007-01-01

Single Grain Thin-film transistors (SG-TFTs) fabricated inside a location-controlled grain by µ-Czochralski process have as high as SOI performance. To model them, BSIMSOI with a proper modification of the mobility is proposed. The model has been verified for n- and p-channel DC and low frequency AC

Optical and structural characterization of KBr crystals doped cadmium bromide (CdBr{sub 2})

Energy Technology Data Exchange (ETDEWEB)

Bensouici, A., E-mail: bensouicia@yahoo.f [Laboratory of Crystallography (Saint Lucia), Department of Physics, Mentouri-Constantine University, Constantine (Algeria); Plaza, J.L., E-mail: joseluis.plaza@uam.e [Crystal Growth Laboratory (CGL), Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid (Spain); Dieguez, E. [Crystal Growth Laboratory (CGL), Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Madrid (Spain); Halimi, O. [Laboratory of Crystallography (Saint Lucia), Department of Physics, Mentouri-Constantine University, Constantine (Algeria); Guerbous, L. [Centre de recherche nucleaire d' Alger (CRNA), Alger 16000 (Algeria); Sebais, M. [Laboratory of Crystallography (Saint Lucia), Department of Physics, Mentouri-Constantine University, Constantine (Algeria)

2010-04-15

In this paper we demonstrate the presence of CdBr{sub 2} and cadmium aggregates in KBr matrix during Czochralski growth of KBr crystals. The chemical decomposition of CdBr{sub 2} due to high temperature of crystallisation and reformation of cadmium bromide seems to be responsible for this effect.

Galvano-magnetic properties and Shubnikov de Haas effect of Te-whiskers

International Nuclear Information System (INIS)

Berezovets, Veacheslav; Bondarchuk, Nikolai; Nikolaeva, Albina; Nijankovskii, Victor

2009-01-01

The work is devoted to investigation of the peculiarities of magnetoresistance, Hall effect and Shubnikov de Haas oscillations in Te-whiskers. Te-whiskers was prepared from vapor-gas phase on the substrate pure tellurium and grown naturally, of the walls of a crucible in the course of growing Te single crystals by the Czochralski method . The measurements of the galvanomagnetic properties and Shubnikov de Haas oscillation correspond to the notion of the occurrence of the effect of intraband magnetic breakdown when two different quasi-classical cyclotron trajectories coexist simultaneously in a magnetic field. This effect is a consequence of the presence of the saddle point in the dispersion law of the tellurium valence band. (authors)

Crystal growth, spectroscopic characterization, and continuous wave laser operation of Nd3+-doped LiLuF4 crystal

Science.gov (United States)

Zhao, C. C.; Hang, Y.; Zhang, L. H.; He, X. M.; Yin, J. G.; Li, R.; Yu, T.; Chen, W. B.

2011-04-01

Nd3+-doped LiLuF4 single crystal with high optical quality was grown by Czochralski technique. The segregation coefficient of Nd3+ in LiLuF4 crystal was determined by the inductively coupled plasma atomic emission spectrometry method. Polarized absorption and fluorescence spectra were investigated. The peak absorption cross section at 792 nm and peak emission cross section at 1053 nm are 6.94×10-20 and 7.60×10-20 cm2, respectively. With a laser-diode as the pump source, a maximum 6.22 W continuous-wave laser output at 1053 nm has been obtained with a slope efficiency of 37.2% with respect to the pump power.

Multiple-level defect species evaluation from average carrier decay

Science.gov (United States)

Debuf, Didier

2003-10-01

An expression for the average decay is determined by solving the the carrier continuity equations, which include terms for multiple defect recombination. This expression is the decay measured by techniques such as the contactless photoconductance decay method, which determines the average or volume integrated decay. Implicit in the above is the requirement for good surface passivation such that only bulk properties are observed. A proposed experimental configuration is given to achieve the intended goal of an assessment of the type of defect in an n-type Czochralski-grown silicon semiconductor with an unusually high relative lifetime. The high lifetime is explained in terms of a ground excited state multiple-level defect system. Also, minority carrier trapping is investigated.

Spectral and laser properties of Er3+/Yb3+/Ce3+ tri-doped Ca3NbGa3Si2O14 crystal at 1.55 µm

Science.gov (United States)

Gong, Guoliang; Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong

2018-04-01

An Er3+/Yb3+/Ce3+ tri-doped Ca3NbGa3Si2O14 (CNGS) crystal was grown by the Czochralski method. Spectral properties of the crystal, including the polarized absorption and fluorescence spectra, the fluorescence decay, as well as the energy transfer efficiency from Yb3+ to Er3+ were investigated in detail. End-pumped by a 976 nm diode laser, a 1556 nm continuous-wave laser with a maximum output power of 202 mW and a slope efficiency of 11.4% was achieved in the Er,Yb,Ce:CNGS crystal. The results indicate the Er,Yb,Ce:CNGS crystal is a promising 1.55 µm laser gain medium.

Polarized spectra calculation and continuous wave laser operation of Yb-doped disordered Ca3La2(BO3)4 crystal

Science.gov (United States)

Wang, Yeqing; Chen, Aixi; You, Zhenyu; Tu, Chaoyang

2015-12-01

A notable disorder crystal Yb:Ca3La2(BO3)4 crystal with Yb3+ ion doping concentration of 10 at.% was grown by the Czochralski method. The polarized absorption, polarized emission, and polarized gain cross sections were systematically calculated. The laser operations were investigated with Yb:Ca3La2(BO3)4 crystals cut along the a, b, and c crystallographic axes. The highest output power of 3.88 W was obtained by using the b-cut Yb:Ca3La2(BO3)4 crystal, with a slope efficiency of 62%. Additionally, it was confirmed that the output laser spectra were largely dependent on the output coupler.

Diode-pumped laser performance of Tm:Sc2SiO5 crystal at 1971 nm

International Nuclear Information System (INIS)

Liu Bin; Wang Qing-Guo; Tang Hui-Li; Wu Feng; Luo Ping; Zhao Heng-Yu; Shi Jiao-Jiao; He Nuo-Tian; Li Na; Li Qiu; Guo Chao; Wang Zhan-Shan; Xu Jun; Zheng Li-He; Su Liang-Bi; Liu Jun-Fang; Liu Jie; Fan Xiu-Wei; Xu Xiao-Dong

2017-01-01

The 4-at.% Tm:Sc 2 SiO 5 (Tm:SSO) crystal is successfully obtained by the Czochralski method. The optical properties and thermal conductivity of the crystal are investigated. The broad continuous wave (CW) laser output of (100)-cut Tm:SSO with the dimensions of 3 mm× 3 mm× 3 mm under laser diode (LD)-pumping is realized. The full width at half maximum (FWHM) of the laser emitting reaches up to 21 nm. The laser threshold of Tm:SSO is measured to be 0.43 W. Efficient diode-pumped CW laser performance of Tm:SSO is demonstrated with a slope efficiency of 25.9% and maximum output power of 934 mW. (paper)

Continuous-wave diode-pumped Yb 3+:LYSO tunable laser

Science.gov (United States)

Du, Juan; Liang, Xiaoyan; Xu, Yi; Li, Ruxin; Yan, Chengfeng; Zhao, Guangjun; Su, Liangbi; Xu, Jun; Xu, Zhizhan

2007-01-01

A new alloyed crystal, Yb:LYSO, has been grown by the Czochralski method in our institute for the first time, and its effective diode-pumped cw tunable laser action was demonstrated. The alloyed crystal retains excellent laser properties of LSO with reduced growth cost, as well as the favorable growth properties of YSO. With a 5-at.% Yb:LYSO sample, we achieved 2.84 W output power at 1085 nm and a slope efficiency of 63.5%. And its laser wavelength could be tuned over a range broader than 80nm, from 1030nm to 1111 nm. This is the broadest tunable range achieved for Yb:LYSO laser, as far as we know.

Polarized spectra calculation and continuous wave laser operation of Yb-doped disordered Ca3La2(BO3)4 crystal

International Nuclear Information System (INIS)

Wang, Yeqing; Chen, Aixi; You, Zhenyu; Tu, Chaoyang

2015-01-01

A notable disorder crystal Yb:Ca 3 La 2 (BO 3 ) 4 crystal with Yb 3+ ion doping concentration of 10 at.% was grown by the Czochralski method. The polarized absorption, polarized emission, and polarized gain cross sections were systematically calculated. The laser operations were investigated with Yb:Ca 3 La 2 (BO 3 ) 4 crystals cut along the a, b, and c crystallographic axes. The highest output power of 3.88 W was obtained by using the b-cut Yb:Ca 3 La 2 (BO 3 ) 4 crystal, with a slope efficiency of 62%. Additionally, it was confirmed that the output laser spectra were largely dependent on the output coupler. (paper)

Laser-zone Growth in a Ribbon-to-ribbon (RTR) Process Silicon Sheet Growth Development for the Large Area Silicon Sheet Task of the Low Cost Solar Array Project

Science.gov (United States)

Baghdadi, A.; Gurtler, R. W.; Legge, R.; Sopori, B.; Rice, M. J.; Ellis, R. J.

1979-01-01

A technique for growing limited-length ribbons continually was demonstrated. This Rigid Edge technique can be used to recrystallize about 95% of the polyribbon feedstock. A major advantage of this method is that only a single, constant length silicon ribbon is handled throughout the entire process sequence; this may be accomplished using cassettes similar to those presently in use for processing Czochralski waters. Thus a transition from Cz to ribbon technology can be smoothly affected. The maximum size being considered, 3 inches x 24 inches, is half a square foot, and will generate 6 watts for 12% efficiency at 1 sun. Silicon dioxide has been demonstrated as an effective, practical diffusion barrier for use during the polyribbon formation.

Recombination of charge carriers on radiation-induced defects in silicon doped by transition metals impurities

CERN Document Server

Kazakevich, L A

2003-01-01

It has been studied the peculiarities of recombination of nonequilibrium charge carriers on radiation-induced defects in received according to Czochralski method p-silicon (p approx 3 - 20 Ohm centre dot cm), doped by one of the impurities of transition metals of the IV-th group of periodic table (titanium, zirconium, hafnium). Experimental results are obtained out of the analysis of temperature and injection dependence of the life time of charge carriers. The results are explained taking into consideration the influences of elastic stress fields created by the aggregates of transition metals atoms on space distribution over the crystal of oxygen and carbon background impurities as well as on the migration of movable radiation-induced defects during irradiation. (authors).

Growth and optical property of ZnWO4: Er3+ crystal

International Nuclear Information System (INIS)

Yang Fugui; Tu Chaoyang; Li Jianfu; Jia Guohua; Wang Hongyan; Wei Yanping; You Zhenyu; Zhu Zhaojie; Wang Yan; Lu Xiuai

2007-01-01

Good quality crystals ZnWO 4 activated with Er 3+ have been grown by means of Czochralski method and characterized using optical spectroscopy techniques. XRD, absorption spectra, fluorescence spectrum are presented and the Judd-Ofelt intensity parameters Ω 2 , Ω 4 , and Ω 6 are obtained to be 6.76x10 -20 , 0.37x10 -20 , and 0.50x10 -20 cm 2 , respectively. Along crystallographic axes, refractive indices are presented. The fluorescence decay time of the 4 I 13/2 level has also been investigated and shows an exponential behavior with a lifetime value of 5.52 ms. The crystal is potentially used for green and infrared eye-safe lasers

Spectroscopic analysis and efficient diode-pumped 1.9 μm Tm3+-doped β'-Gd2(MoO4)3 crystal laser.

Science.gov (United States)

Tang, Jianfeng; Chen, Yujin; Lin, Yanfu; Gong, Xinghong; Huang, Jianhua; Luo, Zundu; Huang, Yidong

2011-07-04

Tm3+-doped β'-Gd2(MoO4)3 single crystal was grown by the Czochralski method. Spectroscopic analysis was carried out along different polarizations. End-pumped by a quasi-cw diode laser at 795 nm in a plano-concave cavity, an average laser output power of 58 mW around 1.9 μm was achieved in a 0.93-mm-thick crystal when the output coupler transmission was 7.1%. The absorbed pump threshold was 8 mW and the slope efficiency of the laser was 57%. This crystal has smooth and broad gain curve around 1.9 μm, which shows that it is also a potential gain medium for tunable and short pulse lasers.

Peculiarities of defect formation in InP single crystals doped with donor (S, Ge) and acceptor (Zn) impurities

International Nuclear Information System (INIS)

Morozov, A.N.; Mikryukova, E.V.; Bublik, V.T.; Berkova, A.V.; Nashel'skij, A.Ya.; Yakobson, S.V.

1988-01-01

Effect of alloying with donor (S,Ge) and acceptor (Zn) impurities on the concentration of proper point defects in monocrystals InP grown up from equiatomic (relative to In and P) melts by the Czochralski method under flux layer is investigated. Changes in boundary positions of the InP homogeneity region caused by alloying are analysed on the basis of experimental results according to the precision measurement of the lattice parameter and crystal density, as well as measurements of the Hall concentration of charge carriers and their mobility. The concentrations of Frenkel nonequilibrium (V in -In i ) defects formed in the initial stage of indium solid solution decomposition in InP are estimated

Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

KAUST Repository

Hussain, Aftab M.

2013-08-16

We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nondestructive evaluation of differently doped InP wafers by time-resolved four-wave mixing technique

International Nuclear Information System (INIS)

Kadys, A.; Sudzius, M.; Jarasiunas, K.; Mao Luhong; Sun Niefeng

2006-01-01

Photoelectric properties of semi-insulating, differently doped, and undoped indium phosphide wafers, grown by the liquid encapsulation Czochralski method, have been investigated by time-resolved picosecond four-wave mixing technique. Deep defect related carrier generation, recombination, and transport properties were investigated experimentally by measuring four-wave mixing kinetics and exposure characteristics. The presence of deep donor states in undoped InP was confirmed by a pronounced effect of a space charge electric field to carrier transport. On the other hand, the recharging dynamics of electrically active residual impurities was observed in undoped and Fe-doped InP through the process of efficient trapping of excess carriers. The bipolar diffusion coefficients and mobilities were determined for the all wafers

Crystal growth and characterization of calcium metaborate scintillators

Science.gov (United States)

Fujimoto, Y.; Yanagida, T.; Kawaguchi, N.; Fukuda, K.; Totsuka, D.; Watanabe, K.; Yamazaki, A.; Chani, V.; Nikl, M.; Yoshikawa, A.

2013-03-01

Calcium metaborate CaB2O4 single crystals were grown by the Czochralski (CZ) method with the radio-frequency (RF) heating system. In these crystals, a plane cleavage was observed along the growth direction. The crystals had an 80% transparency, and no absorption bands were detected in the 190-900 nm wavelength range. The 241Am 5.5 MeV α-ray-excited radioluminescence spectrum of CaB2O4 demonstrated a broad intrinsic luminescence peak at 300-400 nm, which originated from the lattice defects or an exciton-based emission. According to the pulse height spectrum, when irradiated by neutrons from a 252Cf source, the scintillation light yielded approximately 3200 photons per neutron (ph/n).

Crystal growth, defects, and mechanical and spectral properties of a novel mixed laser crystal Nd:GdYNbO{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Ding, Shoujun; Dou, Renqin [Chinese Academy of Sciences, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China); University of Science and Technology of China, Hefei (China); Liu, Wenpeng; Zhang, Qingli; Peng, Fang; Luo, Jianqiao; Sun, Guihua; Sun, Dunlu [Chinese Academy of Sciences, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China)

2017-01-15

A mixed laser crystal of Nd-doped GYNO crystal was grown successfully by Czochralski method. The crystal belongs to monoclinic system with space group I2/a, the structural parameters are obtained by the X-ray Rietveld refinement method. The defects and dislocations along three crystallographic orientations were studied by using the chemical etching method with the phosphoric acid etchant. The mechanical properties (including hardness, yield strength, fracture toughness, and brittle index) of the crystal were estimated by Vickers hardness test. The transmission spectrum was measured at room temperature, and the absorption peaks were assigned. Spectral properties of the as-grown crystal were investigated by Judd-Ofelt theory, and the Judd-Ofelt intense parameters Ω{sub 2,4,6} were obtained to be 9.674 x 10{sup -20}, 2.092 x 10{sup -20}, and 4.061 x 10{sup -20} cm{sup 2}, respectively. (orig.)

Fast Pulling of n-Type Si Ingots for Enhanced Si Solar Cell Production

Science.gov (United States)

Kim, Kwanghun; Park, Sanghyun; Park, Jaechang; Pang, Ilsun; Ryu, Sangwoo; Oh, Jihun

2018-03-01

Reducing the manufacturing costs of silicon substrates is an important issue in the silicon-based solar cell industry. In this study, we developed a high-throughput ingot growth method by accelerating the pulling speed in the Czochralski process. By controlling the heat flow of the ingot growth chamber and at the solid-liquid interfaces, the pulling speed of an ingot could be increased by 15% compared to the conventional method, while retaining high quality. The wafer obtained at a high pulling speed showed an enhanced minority carrier lifetime compared with conventional wafers, due to the vacancy passivation effect, and also demonstrated comparable bulk resistivity and impurities. The results in this work are expected to open a new way to enhance the productivity of Si wafers used for Si solar cells, and therefore, to reduce the overall manufacturing cost.

The role of the substrate in the high energy boron implantation damage recovering

International Nuclear Information System (INIS)

Mica, I.; Di Piazza, L.; Laurin, L.; Mariani, M.; Mauri, A.G.; Polignano, M.L.; Ricci, E.; Sammiceli, F.; Spoldi, G.

2009-01-01

In this work the role of the Si substrate in the high energy boron implantation damage recovering is studied. The boron implants were carried out in Czochralski grown (1 0 0) polished Si substrates as well as in epitaxial Si layers grown on (1 0 0) Si by chemical vapor deposition. The boron implantation dose was 2 x 10 14 cm -2 and the implantation energy was 600 keV. The recovery annealing was a furnace annealing at 1000 deg. C for 40 min. The defects formed by high energy boron implantation have been observed with transmission electron microscopy (TEM). In order to increase the statistics some junctions were formed on the buried p-well and electrically characterized. For the epitaxial wafers it was found that the number and the size of the dislocations change according to the doping of the substrate. For the Czochralski wafers it was found that the morphology and the size of the dislocations change according to the presence of the wafer pre-annealing (whether conventional furnace annealing or Magic Denuded Zone process).

Microdefects revealed by X-ray diffusion scattering in Czochralski-growth dislocation-free silicon single crystals

International Nuclear Information System (INIS)

Bublik, B.T.; Zotov, N.M.

1997-01-01

Microdefects in the regions of Si crystals having different thermal history defined by growth conditions was studied by the X-ray diffuse scattering method on a triple crystal X-ray diffractometer. It was shown that in such crystals the microdefects with positive strength are prevalent. However, between the above indicated regions the defects with the strength of opposite sign prevail

The low thermal gradient CZ technique as a way of growing of dislocation-free germanium crystals

Science.gov (United States)

Moskovskih, V. A.; Kasimkin, P. V.; Shlegel, V. N.; Vasiliev, Y. V.; Gridchin, V. A.; Podkopaev, O. I.

2014-09-01

This paper considers the possibility of growth of dislocation-free germanium single crystals. This is achieved by reducing the temperature gradients at the level of 1 K/cm and lower. Single germanium crystals 45-48 mm in diameter with a dislocation density of 102 cm-2 were grown by a Low Thermal Gradient Czochralski technique (LTG CZ).

Twinning structures in near-stoichiometric lithium niobate single crystals

International Nuclear Information System (INIS)

Yao, Shuhua; Chen, Yanfeng

2010-01-01

A near-stoichiometric lithium niobate single crystal has been grown by the Czochralski method in a hanging double crucible with a continuous powder supply system. Twins were found at one of the three characteristic growth ridges of the as-grown crystal. The twin structure was observed and analyzed by transmission synchrotron topography. The image shifts ΔX and ΔY in the transmission synchrotron topograph were calculated for the 3 anti 2 anti 12 and 0 anti 222 reflections based on results from high-resolution X-ray diffractometry. It is confirmed that one of the {01 anti 1 anti 2} m planes is the composition face of the twin and matrix crystals. The formation mechanism of these twins is discussed. (orig.)

Diode-pumped orthogonally polarized dual-wavelength Nd3+:LaBO2MoO4 laser

Science.gov (United States)

Chen, Y. J.; Gong, X. H.; Lin, Y. F.; Huang, J. H.; Luo, Z. D.; Huang, Y. D.

2013-08-01

Polarized spectroscopic properties related to 1.07 μm laser operation of a 1.8 at.% Nd3+:LaBO2MoO4 crystal grown by the Czochralski method were investigated at room temperature. Using a 2.2-mm-thick, Z-cut Nd3+:LaBO2MoO4 crystal as gain medium, orthogonally polarized dual-wavelength laser at 1,068 and 1,074 nm was first realized in a plano-concave resonator end-pumped by a quasi-continuous-wave 795 nm diode laser. A total output peak power of 1.2 W with slope efficiency of 26 % around 1.07 μm was obtained. The influences of resonator length and pump power on output laser wavelength were also investigated.

Growth, thermal properties and laser operation of a novel disordered Yb:Ca3La2(BO3)4 laser crystal

Science.gov (United States)

Pan, Zhongben; Cai, Huaqiang; Huang, Hui; Yu, Haohai; Zhang, Huaijin; Wang, Jiyang

2014-10-01

A high quality disordered Yb:Ca3La2(BO3)4 laser crystal has been successfully grown by the Czochralski method. The complete set of anisotropic thermal properties were systematically measured for the first time. In addition, continuous-wave laser along the three crystallographic axis were obtained. Passively Q-switched by a Cr4+:YAG saturable absorber, the laser yielded an average output power of 0.47 W with a slope efficiency of 7.6% for the first time. The generated pulse energy, duration, and peak power were 94 μJ, 33 ns, and 2.85 KW, respectively. We believe that the reliability and stability of these lasers makes the disordered Yb:Ca3La2(BO3)4 crystal of considerable interest for future applications.

Crystal growth, spectral and laser properties of Nd:LuAG single crystal

International Nuclear Information System (INIS)

Xu, X D; Meng, J Q; Cheng, Y; Li, D Z; Cheng, S S; Wu, F; Zhao, Z W; Wang, X D; Xu, J

2009-01-01

Nd:LuAG (Nd:Lu 3 Al 5 O 12 ) crystal was grown by the Czochralski method. X-ray powder diffraction experiments show that the Nd:LuAG crystal crystallizes in the cubic with space group Ia3d and has the cell parameter: a = 1.1907 nm, V = 1.6882 nm 3 . The absorption and fluorescence spectra of Nd:LuAG crystal at room temperature were investigated. With a fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Nd:LuAG crystal was demonstrated. The maximum output power at 1064 nm was obtained to be 3.8 W under the incident pump power of 17.3 W, with the optical conversion efficiency 22.0% and the slope efficiency 25.7%

Crystal growth, spectral and laser properties of Nd:LuAG single crystal

Science.gov (United States)

Xu, X. D.; Wang, X. D.; Meng, J. Q.; Cheng, Y.; Li, D. Z.; Cheng, S. S.; Wu, F.; Zhao, Z. W.; Xu, J.

2009-09-01

Nd:LuAG (Nd:Lu3Al5O12) crystal was grown by the Czochralski method. X-ray powder diffraction experiments show that the Nd:LuAG crystal crystallizes in the cubic with space group Ia3d and has the cell parameter: a = 1.1907 nm, V = 1.6882 nm3. The absorption and fluorescence spectra of Nd:LuAG crystal at room temperature were investigated. With a fiber-coupled diode laser as pump source, the continuous-wave (CW) laser action of Nd:LuAG crystal was demonstrated. The maximum output power at 1064 nm was obtained to be 3.8 W under the incident pump power of 17.3 W, with the optical conversion efficiency 22.0% and the slope efficiency 25.7%.

Features of bicrystal growth during the directional crystallization of metal melts

Energy Technology Data Exchange (ETDEWEB)

Gubernatorov, V. V.; Sycheva, T. S., E-mail: sych@imp.uran.ru; Gundyrev, V. M.; Akshentsev, Yu. N. [Russian Academy of Sciences, M.N. Mikheev Institute of Metal Physics, Ural Branch (Russian Federation)

2017-03-15

The factors responsible for the formation of different configurations of boundaries between adjacent crystallites during their growth from melt by Bridgman and Czochralski methods have been considered by an of example Fe–20 wt % Ga alloy and Ni bicrystals. It is found that the configuration of intercrystallite boundary is related to the features of crystallite growth, caused by the strained state of intercrystallite and interphase (crystal–melt) boundaries, the difference in the linear thermal expansion coefficients of the crystallite boundaries and bulk, and the shape (geometry) of the bicrystal cross section. It is suggested that the strained state of boundaries and the formation of substructure in crystallites during directional crystallization from metal melt are significantly affected by their deformation under the melt weight.

Rare-Earth Tantalates and Niobates Single Crystals: Promising Scintillators and Laser Materials

Directory of Open Access Journals (Sweden)

Renqin Dou

2018-01-01

Full Text Available Rare-earth tantalates, with high density and monoclinic structure, and niobates with monoclinic structure have been paid great attention as potential optical materials. In the last decade, we focused on the crystal growth technology of rare-earth tantalates and niobates and studied their luminescence and physical properties. A series of rare-earth tantalates and niobates crystals have been grown by the Czochralski method successfully. In this work, we summarize the research results on the crystal growth, scintillation, and laser properties of them, including the absorption and emission spectra, spectral parameters, energy levels structure, and so on. Most of the tantalates and niobates exhibit excellent luminescent properties, rich physical properties, and good chemical stability, indicating that they are potential outstanding scintillators and laser materials.

Probing Single Pt Atoms in Complex Intermetallic Al13Fe4.

Science.gov (United States)

Yamada, Tsunetomo; Kojima, Takayuki; Abe, Eiji; Kameoka, Satoshi; Murakami, Yumi; Gille, Peter; Tsai, An Pang

2018-03-21

The atomic structure of a 0.2 atom % Pt-doped complex metallic alloy, monoclinic Al 13 Fe 4 , was investigated using a single crystal prepared by the Czochralski method. High-angle annular dark-field scanning transmission electron microscopy showed that the Pt atoms were dispersed as single atoms and substituted at Fe sites in Al 13 Fe 4 . Single-crystal X-ray structural analysis revealed that the Pt atoms preferentially substitute at Fe(1). Unlike those that have been reported, Pt single atoms in the surface layers showed lower activity and selectivity than those of Al 2 Pt and bulk Pt for propyne hydrogenation, indicating that the active state of a given single-atom Pt site is strongly dominated by the bonding to surrounding Al atoms.

Synthesis, single crystal growth and thermodynamic properties of SrNdAlO4-CaNdAlO4 solid solutions

International Nuclear Information System (INIS)

Novoselov, A.; Ryumin, M.; Pushkina, G.; Spiridonov, F.; Komissarova, L.; Zimina, G.; Pajaczkowska, A.

2005-01-01

Continuous solid solutions in the SrNdAlO 4 -CaNdAlO 4 system are formed. Powder samples of Sr x Ca 1-x NdAlO 4 (0.0≤x≤1.0) were obtained using the carbonate coprecipitation method while single crystals of Sr x Ca 1-x NdAlO 4 (x=0.0,0.162,0.392,0.687,1.0) were grown by the Czochralski method. Structural parameters and thermodynamic properties of the samples were studied by X-ray diffraction and heat flux Calvet calorimetry. Composition dependence of lattice constants was observed to follow Vegard's low. Heat of solution of the Sr x Ca 1-x NdAlO 4 samples in molten 2PbO.B 2 O 3 were measured, and enthalpies of formation and mixing were calculated. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Specifies of the formed fast cover silica diodes

Directory of Open Access Journals (Sweden)

Gorban A. N.,

2008-06-01

Full Text Available The authors have investigated the dependence of the current recovery time trr on the diode structures annealing parameters after irradiation by electrons е– with the energy of 4 and 10 MeV, and the fluence of 6•1015 and 8•1014 cm–2, respectively. Diodes with minimal time trr and maximum shape factor of the reduction current Krr are obtained by annealing of structures after irradiation by е– with the energy of 4 MeV and fluence 6•1015 cm–2. Time trr decreases with the increase of ratio of recombination centers concentration with energy level E3(0,37 to the concentration of other defects. At the same time, for silicon, doped with transmutation nuclear reactions, it is necessary to increase the annealing temperature as compared with the silicon, produced by the Czochralski method and zone melting method.

The nature of the Esub(v) + 0.23 eV and Esub(v) + 0.38 eV gamma-induced centres in Ge

International Nuclear Information System (INIS)

Pearton, S.J.; Tavendale, A.J.

1982-07-01

All p-type Ge grown by the Czochralski technique from silica crucibles under an H 2 atmosphere shows two dominant acceptor defects on γ irradiation. Measurements by DLTS are reported which support the hypothesis that these centres (Esub(v) + 0.23 eV, Esub(v) + 0.38 eV) are most likely due to complexes between oxygen and lattice vacancies

Spectroscopic and radiation-resistant properties of Er,Pr:GYSGG laser crystal operated at 2.79 μm

International Nuclear Information System (INIS)

Zhao Xu-Yao; Sun Dun-Lu; Luo Jian-Qiao; Zhang Hui-Li; Fang Zhong-Qing; Quan Cong; Li Xiu-Li; Cheng Mao-Jie; Zhang Qing-Li; Yin Shao-Tang

2017-01-01

We demonstrate the spectroscopic and laser performance before and after 100 Mrad gamma-ray irradiation on an Er,Pr:GYSGG crystal grown by the Czochralski method. The additional absorption of Er,Pr:GYSGG crystal is close to zero in the 968 nm pumping and 2.7–3 μm laser wavelength regions. The lifetimes of the upper and lower levels show faint decreases after gamma-ray irradiation. The maximum output powers of 542 and 526 mW with the slope efficiencies of 17.7% and 17.0% are obtained, respectively, on the GYSGG/Er,Pr:GYSGG composite crystal before and after the gamma-ray irradiation. These results suggest that Er,Pr:GYSGG crystal as a laser gain medium possesses a distinguished anti-radiation ability for application in space and radiant environments. (paper)

Growth and characterization of heavily doped silicon crystals

Energy Technology Data Exchange (ETDEWEB)

Scala, R.; Porrini, M. [MEMC Electronic Materials SpA, via Nazionale 59, 39012 Merano (Italy); Borionetti, G. [MEMC Electronic Materials SpA, viale Gherzi 31, Novara (Italy)

2011-08-15

Silicon crystals grown with the Czochralski method are still the most common material used for the production of electronic devices. In recent years, a growing need of large diameter crystals with increasingly higher doping levels is observed, especially to support the expanding market of discrete devices and its trend towards lower and lower resistivity levels for the silicon substrate. The growth of such heavily doped, large-diameter crystals poses several new challenges to the crystal grower, and the presence of a high dopant concentration in the crystal affects significantly its main properties, requiring also the development of dedicated characterization techniques. This paper illustrates the recent advances in the growth and characterization of silicon crystals heavily doped with antimony, arsenic, phosphorus and boron. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The photorefractive characteristics of bismuth-oxide doped lithium niobate crystals

International Nuclear Information System (INIS)

Zheng, Dahuai; Yao, Jiaying; Kong, Yongfa; Liu, Shiguo; Zhang, Ling; Chen, Shaolin; Xu, Jingjun

2015-01-01

Bismuth-doped lithium niobate (LN:Bi) crystals were grown by Czochralski method and their optical damage resistance, photorefraction, absorption spectra, and defect energy levels were investigated. The experimental results indicate that the photorefractive properties of LN:Bi were enhanced as compared with congruent one, the photorefractive response time was greatly shortened, the photorefractive sensitivity was increased, and the diffraction efficiency of near-stoichiometric LN:Bi (SLN:Bi) reached 31.72% and 49.08% at 532 nm and 488 nm laser, respectively (light intensity of 400 mW/cm 2 ). An absorption peak at about 350 nm was observed in the absorption spectrum of LN:Bi. And the defect energy levels simulation indicates new defect levels appear in the forbidden gap of LN:Bi crystals. Therefore bismuth can act as photorefractive centers in LN crystals

Diode-pumped laser with Yb:YAG single-crystal fiber grown by the micro-pulling down technique

Science.gov (United States)

Sangla, D.; Aubry, N.; Didierjean, J.; Perrodin, D.; Balembois, F.; Lebbou, K.; Brenier, A.; Georges, P.; Tillement, O.; Fourmigué, J.-M.

2009-02-01

Laser emission obtained from an Yb:YAG single-crystal fiber directly grown by the micro-pulling down technique is demonstrated for the first time. We achieved 11.2 W of continuous wave (CW) output power at 1031 nm for 55 W of incident pump power at 940 nm. In the Q-switched regime, we obtained pulses as short as 17 ns, for an average power of 2.3 W at 2 kHz corresponding to an energy of 1.15 mJ. In both cases, the M 2 factor was 2.5. This single-crystal fiber showed performance similar to a standard rod elaborated by the Czochralski method. The potential of Yb3+-doped single-crystal fibers is presented for scalable high-average and high-peak-power laser systems.

Crystal growth, optical properties, and laser operation of Yb3+-doped NYW single crystal

Science.gov (United States)

Cheng, Y.; Xu, X. D.; Yang, X. B.; Xin, Z.; Cao, D. H.; Xu, J.

2009-11-01

Laser crystal Yb3+-doped NaY(WO4)2 (Yb:NYW) with excellent quality has been grown by Czochralski technique. The rocking curves from (400) plane of as-grown Yb:NYW crystal was measured and the full-width value at half-maximum was 19.92″. The effective segregation coefficients were measured by the X-ray fluorescence method. The polarized absorption spectra and the fluorescence spectra of Yb:NYW crystal were measured at room temperature. The fluorescence decay lifetime of Yb3+ ion in NYW crystal has been investigated. The spectroscopic parameters of Yb:NYW crystal are calculated and compared with those of Yb:YAG crystal. A continuous wave output power of 3.06 W at 1031 nm was obtained with a slope efficiency of 42% by use of diode pumping.

The photorefractive characteristics of bismuth-oxide doped lithium niobate crystals

Energy Technology Data Exchange (ETDEWEB)

Zheng, Dahuai; Yao, Jiaying [School of Physics, Nankai University, Tianjin 300071 (China); Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China); Kong, Yongfa, E-mail: kongyf@nankai.edu.cn [School of Physics, Nankai University, Tianjin 300071 (China); MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Applied Physics School, Nankai University, Tianjin 300457 (China); R and D Center, Taishan Sports Industry Group, Leling 253600 (China); Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China); Liu, Shiguo [School of Physics, Nankai University, Tianjin 300071 (China); Zhang, Ling; Chen, Shaolin [MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Applied Physics School, Nankai University, Tianjin 300457 (China); Xu, Jingjun [School of Physics, Nankai University, Tianjin 300071 (China); MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Applied Physics School, Nankai University, Tianjin 300457 (China); Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072 (China)

2015-01-15

Bismuth-doped lithium niobate (LN:Bi) crystals were grown by Czochralski method and their optical damage resistance, photorefraction, absorption spectra, and defect energy levels were investigated. The experimental results indicate that the photorefractive properties of LN:Bi were enhanced as compared with congruent one, the photorefractive response time was greatly shortened, the photorefractive sensitivity was increased, and the diffraction efficiency of near-stoichiometric LN:Bi (SLN:Bi) reached 31.72% and 49.08% at 532 nm and 488 nm laser, respectively (light intensity of 400 mW/cm{sup 2}). An absorption peak at about 350 nm was observed in the absorption spectrum of LN:Bi. And the defect energy levels simulation indicates new defect levels appear in the forbidden gap of LN:Bi crystals. Therefore bismuth can act as photorefractive centers in LN crystals.

Development of silicon growth techniques from melt with surface heating

Science.gov (United States)

Kravtsov, Anatoly

2018-05-01

The paper contains literary and personal data on the development history of silicon-growing technology with volumetric and surface melt heating. It discusses the advantages and disadvantages of surface-heating technology. Examples are given of the implementation of such processes in the 60s-70s of the last century, and the reasons for the discontinuation of the relevant work. It describes the main solutions for the implementation of crystal growth process with the electron-beam heating of the melt surface, implemented by KEPP EU (Latvia). It discusses differences in the management of the growth process for the crystals with constant diameters compared to the Czochralski method. It lists geometrical and electro-physical properties of the obtained crystals. It describes the possible use of such crystals and the immediate challenges of technology development.

Structural Characterization of Doped GaSb Single Crystals by X-ray Topography

Energy Technology Data Exchange (ETDEWEB)

Honnicke, M.G.; Mazzaro, I.; Manica, J.; Benine, E.; M da Costa, E.; Dedavid, B. A.; Cusatis, C.; Huang, X. R.

2009-09-13

We characterized GaSb single crystals containing different dopants (Al, Cd and Te), grown by the Czochralski method, by x-ray topography and high angular resolution x-ray diffraction. Lang topography revealed dislocations parallel and perpendicular to the crystal's surface. Double-crystal GaSb 333 x-ray topography shows dislocations and vertical stripes than can be associated with circular growth bands. We compared our high-angular resolution x-ray diffraction measurements (rocking curves) with the findings predicted by the dynamical theory of x-ray diffraction. These measurements show that our GaSb single crystals have a relative variation in the lattice parameter ({Delta}d/d) on the order of 10{sup -5}. This means that they can be used as electronic devices (detectors, for example) and as x-ray monochromators.

Role of oxygen in surface segregation of metal impurities in silicon poly- and bicrystals

Energy Technology Data Exchange (ETDEWEB)

Amarray, E.; Deville, J.P.

1987-07-01

Metal impurities at surfaces of polycrystalline silicon ribbons have been characterized by surface sensitive methods. Oxygen and heat treatments were found to be a driving force for surface segregation of these impurities. To better analyse their influence and their possible incidence in gettering, model studies were undertaken on Czochralski grown silicon bicrystals. Two main factors of surface segregation have been studied: the role of an ultra-thin oxide layer and the effect of heat treatments. The best surface purification was obtained after an annealing process at 750/sup 0/C of a previously oxidized surface at 450/sup 0/C. This was related to the formation of SiO clusters, followed by a coalescence of SiO/sub 4/ units leading to the subsequent injection of silicon self-interstitials in the lattice.

Study on growth techniques and macro defects of large-size Nd:YAG laser crystal

Science.gov (United States)

Quan, Jiliang; Yang, Xin; Yang, Mingming; Ma, Decai; Huang, Jinqiang; Zhu, Yunzhong; Wang, Biao

2018-02-01

Large-size neodymium-doped yttrium aluminum garnet (Nd:YAG) single crystals were grown by the Czochralski method. The extinction ratio and wavefront distortion of the crystal were tested to determine the optical homogeneity. Moreover, under different growth conditions, the macro defects of inclusion, striations, and cracking in the as-grown Nd:YAG crystals were analyzed. Specifically, the inclusion defects were characterized using scanning electron microscopy and energy dispersive spectroscopy. The stresses of growth striations and cracking were studied via a parallel plane polariscope. These results demonstrate that improper growth parameters and temperature fields can enhance defects significantly. Thus, by adjusting the growth parameters and optimizing the thermal environment, high-optical-quality Nd:YAG crystals with a diameter of 80 mm and a total length of 400 mm have been obtained successfully.

Growth and properties of Nd:(Lu xGd 1-x) 3Ga 5O 12 laser crystal by Czochralski method

Science.gov (United States)

Jia, Zhitai; Tao, Xutang; Yu, Haohai; Dong, Chunming; Zhang, Jian; Zhang, Huaijin; Wang, Zhengping; Jiang, Minhua

2008-10-01

In this paper we report the growth and characterization of Nd:(Lu xGd 1-x) 3Ga 5O 12 crystal for the first time. The polycrystalline materials were synthesized by conventional solid-state reaction. Single crystal with good optical quality was successfully obtained and the dimensions of the as-grown crystal were Ø21 × 30 mm 3. X-ray powder diffraction studies confirm that the Nd:(Lu xGd 1-x) 3Ga 5O 12 crystal is isostructural with Gd 3Ga 5O 12 with unit cell parameter of 1.2361 nm which is less than that of Gd 3Ga 5O 12 crystal (1.2376 nm). The absorption and emission spectra of the crystal at room temperature have also been studied. Continuous-wave (CW) laser performance at 1.06 μm has been demonstrated on the crystal.

Diode-pumped efficient laser operation and spectroscopy of Tm,Ho:YVO 4

Science.gov (United States)

Li, G.; Yao, B. Q.; Meng, P. B.; Duan, X. M.; Ju, Y. L.; Wang, Y. Z.

2011-04-01

Spectroscopic characterization of co-doped Tm,Ho:YVO 4 crystal grown by the Czochralski method has been performed including absorption spectrum, emitting spectrum and luminescence decay lifetime. The polarization emitting spectrum around 2 μm is accomplished by exciting a singly Ho 3+ doped YVO 4 crystal to exclude the influence of Tm 3+3F 4- 3H 6 transition and the emission cross section is deduced from both Fuchtbauer-Ladenburg (F-L) equation and reciprocity method (RM). In addition, we report up to 10.4 W continuous wave (CW) output with a conversion efficiency of 40% and 10.3 W Q-Switch output with 12.5 kHz pulse repetition rate of diode-pumped cryogenic Tm,Ho:YVO 4 laser. For Q-Switch operation, the minimum pulse width of 28.2 ns is obtained, all of which demonstrate that the Tm,Ho:YVO 4 is excellent laser material for 2 μm radiation.

Experiment and density functional theory analyses of GdTaO4 single crystal

Science.gov (United States)

Ding, Shoujun; Kinross, Ashlie; Wang, Xiaofei; Yang, Huajun; Zhang, Qingli; Liu, Wenpeng; Sun, Dunlu

2018-05-01

GdTaO4 is a type of excellent materials that can be used as scintillation, laser matrix as well as self-activated phosphor has generated significant interest. Whereas its band structure, electronic structure and optical properties are still need elucidation. To solve this intriguing problem, high-quality GdTaO4 single crystal (M-type) was grown successfully using Czochralski method. Its structure as well as optical properties was determined in experiment. Moreover, a systematic theoretical calculation based on the density function theory methods were performed on M-type and M‧-type GdTaO4 and their band structure, density of state as well as optical properties were obtained. Combine with the performed experiment results, the calculated results were proved with high reliability. Hence, the calculated results obtained in this work could provide a deep understanding of GdTaO4 material, which also useful for the further investigation on GdTaO4 material.

Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment

Energy Technology Data Exchange (ETDEWEB)

Gaidar, G. P., E-mail: gaydar@kinr.kiev.ua [National Academy of Sciences of Ukraine, Institute for Nuclear Research (Ukraine); Baranskii, P. I. [National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)

2016-06-15

The effect of thermal annealing in the temperature range 800 ⩽ T{sub ann} ⩽ 1200°C and of two cooling rates (v{sub cl} = 1 and 15°C min{sup –1}) upon a change in the concentration of charge carriers in the conduction band, their mobility, and tensoresistance in n-Si crystals doped by nuclear transmutation and doped with phosphorus impurity via the melt (during growth by the Czochralski method) was investigated. It is found that, after annealing of all of the crystals at T{sub ann} = 1050–1100°C, the concentration of charge carriers is increased by a factor of 1.3–1.7 compared to the initial concentration (irrespective of the method of doping). The specific annealing-temperature-dependent effect of cooling with a rate of 15°C min{sup –1} on the properties of transmutation-doped n-Si:P crystals is detected.

Growth and anisotropic spectral properties of Er:YAlO{sub 3} crystal

Energy Technology Data Exchange (ETDEWEB)

Dong Qin [Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Qinghe Road No. 390, Jiading, Shanghai 201800 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China); Zhao Guangjun, E-mail: zhaoguangjun@163.ne [Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Qinghe Road No. 390, Jiading, Shanghai 201800 (China); Cao Dunhua; Chen Jianyu; Ding Yuchong [Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Qinghe Road No. 390, Jiading, Shanghai 201800 (China); Graduate School of Chinese Academy of Sciences, Beijing 100039 (China)

2010-03-18

A high quality Er{sup 3+}-doped YAlO{sub 3} single crystal has been successfully grown with the Czochralski method by a radio-frequency heating system. The polarized absorption and polarized fluorescence spectra are measured at room temperature. The effective phenomenological intensity parameters are obtained by analysis of the polarized absorption spectra with Judd-Ofelt (J-O) theory, and the results are: {Omega}{sub 2,eff}=2.83x10{sup -20}cm{sup 2},{Omega}{sub 4,eff}=1.39x10{sup -20}cm{sup 2},and{Omega}{sub 6,eff}=1.29x10{sup -20}cm{sup 2}. The spontaneous emission probabilities, fluorescence branching ratio and radiative lifetime of Er{sup 3+} ions in YAP crystal are calculated with the obtained parameters. The polarized emission cross-sections of the {sup 4}I{sub 13/2}{yields}{sup 4}I{sub 15/2} transition are calculated by both the Fuchtbauer-Ladenburg formula and the reciprocity method, and the results are compared.

Comparative study of transparent ceramic and single crystal Ce doped LuAG scintillators

International Nuclear Information System (INIS)

Yanagida, Takayuki; Fujimoto, Yutaka; Yokota, Yuui; Kamada, Kei; Yanagida, Satoko; Yoshikawa, Akira; Yagi, Hideki; Yanagitani, Takagimi

2011-01-01

Transparent ceramic Ce 0.5% doped Lu 3 Al 5 O 12 (LuAG) scintillator grown by the sintering method and single crystalline Ce doped LuAG grown by the Czochralski method are prepared. They are cut to the physical dimensions 4 × 4 × 2 mm 3 . Their transmittance and radio luminescence spectra are evaluated. They are both transmissive in wavelength longer than 500 nm and intense Ce 3+ 5d–4f emission appears around 520 nm. When 137 Cs γ-ray is irradiated, 662 keV photo-absorption peaks are clearly observed in each sample. The transparent ceramic one shows higher light yield than that of the single crystalline one. The absolute light yield of the ceramic sample is turned out to be 14800 ± 1500 ph/MeV. The decay time constants are evaluated under pulse X-ray excitation. The main component of the decay time of ceramic and single crystalline one are determined as 37 and 46 ns, respectively.

Deciphering the flow structure of Czochralski melt using Partially ...

Indian Academy of Sciences (India)

Sudeep Verma

2018-02-05

Feb 5, 2018 ... the effect of centrifugal and coriolis forces were included in the momentum equations [4]. The PANS technique is highly sensitive to the type of discretization scheme used and may induce spurious oscillations in the solution, which can be easily confused with more resolved fluctuations. Hence the equations ...

Evolutionary selection growth of two-dimensional materials on polycrystalline substrates

Science.gov (United States)

Vlassiouk, Ivan V.; Stehle, Yijing; Pudasaini, Pushpa Raj; Unocic, Raymond R.; Rack, Philip D.; Baddorf, Arthur P.; Ivanov, Ilia N.; Lavrik, Nickolay V.; List, Frederick; Gupta, Nitant; Bets, Ksenia V.; Yakobson, Boris I.; Smirnov, Sergei N.

2018-03-01

There is a demand for the manufacture of two-dimensional (2D) materials with high-quality single crystals of large size. Usually, epitaxial growth is considered the method of choice1 in preparing single-crystalline thin films, but it requires single-crystal substrates for deposition. Here we present a different approach and report the synthesis of single-crystal-like monolayer graphene films on polycrystalline substrates. The technological realization of the proposed method resembles the Czochralski process and is based on the evolutionary selection2 approach, which is now realized in 2D geometry. The method relies on `self-selection' of the fastest-growing domain orientation, which eventually overwhelms the slower-growing domains and yields a single-crystal continuous 2D film. Here we have used it to synthesize foot-long graphene films at rates up to 2.5 cm h-1 that possess the quality of a single crystal. We anticipate that the proposed approach could be readily adopted for the synthesis of other 2D materials and heterostructures.

Radiation heat transfer of arbitrary axisymmetric bodies with specular and diffuse surfaces; Kyomen ranhanshamen wo motsu nin`i keijo jikutaishobuttai no hosha dennetsu

Energy Technology Data Exchange (ETDEWEB)

Maruyama, S.; Aihara, T. [Tohoku University, Sendai (Japan). Institute of Fluid Sceince

1993-10-25

A radiation light tracking method was used to derive shape factors of arbitrary axisymmetric bodies consisted of specular and diffuse surfaces or an annular face element as a composite surface of the former surfaces. This paper illustrates the summary of an analytical method to calculate radiation heat transfer amount of these bodies using the shape factors, and describes the following matters: The difference between the shape factor obtained by applying this method to the inner face of a cylindrical body and conventional analytical solution can be reduced by increasing the number of splits in outgoing light. The numerical solution from this method on radiation heat transfer amount in the particular body agrees well with the conventional analytical solution. Radiation heat transfer amount when the specular reflectivity was increased either increases or decreases depending on the face shape, not necessarily changing monotonously. The paper further describes briefly a composite heat transfer analysis applied to a silicon crystal growing equipment using the Czochralski method, the analysis combining a radiation heat transfer analysis that splits the equipment interior into 88 annular elements with a general purpose heat transfer analysis. 13 refs., 11 figs., 1 tab.

An experimental and theoretical study of pendellösung fringes in synchrotron section topographs of silicon wafers.

Science.gov (United States)

Partanen, J; Tuomi, T

1990-01-01

X-ray section topographs of nearly perfect Czochralski-grown wafers were made with synchrotron radiation having a continuous spectrum. An intensity curve measured from the x-ray film is compared to the calculated curve obtained using the dynamical theory of x-ray diffraction. A computer simulation of the topograph is also presented. A good agreement between theory and experiment is found except in the middle part of the topograph.

Growth and characterisation of lead iodide single crystals

International Nuclear Information System (INIS)

Tonn, Justus

2012-01-01

The work in hand deals with the growth and characterisation of lead iodide (PbI 2 ) single crystals. PbI 2 is regarded as a promising candidate for low-noise X- and gamma ray detection at room temperature. Its benefits if compared to conventional materials like HgI 2 , CdTe, Si, or GaAs lie in a band gap energy of 2.32 eV, an excellent ability to absorb radiation, and a high electrical resistivity. For an application of PbI 2 as detector material the growth and characterisation of crystals with high chemical and structural quality is extremely challenging. In light of this, the effectiveness of zone purification of the PbI 2 used for crystal growth was confirmed by spectroscopic analysis. Furthermore, technological aspects during processing of purified PbI 2 were investigated. With the help of thermal analysis, a correlation was found between the degree of exposing the source material to oxygen from the air and the structural quality of the resulting crystals. A hydrogen treatment was applied to PbI 2 as an effective method for the removal of oxidic pollutions, which resulted in a significant reduction of structural defects like polytypic growth and stress-induced cracking. The growth of PbI 2 single crystals was, among others, carried out by the Bridgman-Stockbarger method. In this context, much effort was put on the investigation of influences resulting from the design and preparation of ampoules. For the first time, crystal growth of PbI 2 was also carried out by the Czochralski method. If compared to the Bridgman-Stockbarger method, the Czochralski technique allowed a significantly faster growth of nearly crack-free crystals with a reproducible predetermination of crystallographic orientation. By an optimised sample preparation of PbI 2 , surface orientations perpendicular to the usually cleaved (0001) plane were realised. It is now possible to determine the material properties along directions which were so far not accessible. Thus, for example, the ratio of

Analysis and evaluation of process and equipment in tasks 2 and 4 of the Low Cost Solar Array project

Science.gov (United States)

Goldman, H.; Wolf, M.

1978-01-01

Several experimental and projected Czochralski crystal growing process methods were studied and compared to available operations and cost-data of recent production Cz-pulling, in order to elucidate the role of the dominant cost contributing factors. From this analysis, it becomes apparent that substantial cost reductions can be realized from technical advancements which fall into four categories: an increase in furnace productivity; the reduction of crucible cost through use of the crucible for the equivalent of multiple state-of-the-art crystals; the combined effect of several smaller technical improvements; and a carry over effect of the expected availability of semiconductor grade polysilicon at greatly reduced prices. A format for techno-economic analysis of solar cell production processes was developed, called the University of Pennsylvania Process Characterization (UPPC) format. The accumulated Cz process data are presented.

Piezoelectric Ca{sub 3}NbGa{sub 3}Si{sub 2}O{sub 14} crystal: crystal growth, piezoelectric and acoustic properties

Energy Technology Data Exchange (ETDEWEB)

Roshchupkin, Dmitry; Emelin, Evgenii [Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials, Chernogolovka, Moscow District (Russian Federation); National University of Science and Technology MISiS, Moscow (Russian Federation); Ortega, Luc [Univ. Paris-Sud, CNRS, UMR 8502, Laboratoire de Physique des Solides, Orsay Cedex (France); Plotitcyna, Olga; Irzhak, Dmitry [Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials, Chernogolovka, Moscow District (Russian Federation); Erko, Alexei; Zizak, Ivo; Vadilonga, Simone [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Institute for Nanometre Optics and Technology, Berlin (Germany); Buzanov, Oleg [FOMOS Materials Co., Moscow (Russian Federation); Leitenberger, Wolfram [Universitaet Potsdam Institut fuer Physik, Potsdam (Germany)

2016-08-15

Ca{sub 3}NbGa{sub 3}Si{sub 2}O{sub 14} (CNGS), a five-component crystal of lanthanum-gallium silicate group, was grown by the Czochralski method. The parameters of the elementary unit cell of the crystal were measured by powder diffraction. The independent piezoelectric strain coefficients d{sub 11} and d{sub 14} were determined by the triple-axis X-ray diffraction in the Bragg and Laue geometries. Excitation and propagation of surface acoustic waves (SAW) were studied by high-resolution X-ray diffraction at BESSY II synchrotron radiation source. The velocity of SAW propagation and power flow angles in the Y-, X- and yxl/+36 {sup circle} -cuts of the CNGS crystal were determined from the analysis of the diffraction spectra. The CNGS crystal was found practically isotropic by its acoustic properties. (orig.)

Growth, spectral properties, and laser demonstration of Nd:(Lu0.5Gd0.5)2SiO5 crystal

International Nuclear Information System (INIS)

Li, D Z; Xu, X D; Wu, F; Xia, C T; Zhang, J; Ma, J; Cong, Z H; Tang, D Y; Zhu, H M; Chen, X Y; Xu, J

2011-01-01

A Nd:(Lu 0.5 Gd 0.5 ) 2 SiO 5 (Nd:LGSO) crystal has been grown by the Czochralski method. The cell parameters were analyzed with X-ray diffraction (XRD). The Judd-Ofelt intensity parameters Ω 2,4,6 were obtained to be 5.37, 1.63, and 5.57×10 -20 cm 2 , respectively. The absorption and emission cross sections and branching ratios were calculated. The Nd:LGSO crystal reveals a broadband emission feature (FWHM = 9.8 nm), which shows potential as gain medium for ultrashort pulse lasers. The radiative and fluorescence lifetimes are 299 and 230 μs, respectively, resulting in a quantum efficiency of 77%. Pumped by a laser diode, the maximum continuous wave (CW) output power of 444 mW and a slope efficiency of 17.7% have been obtained

Growth, spectral properties, and laser demonstration of Nd:(Lu0.5Gd0.5)2SiO5 crystal

Science.gov (United States)

Li, D. Z.; Xu, X. D.; Zhang, J.; Cong, Z. H.; Tang, D. Y.; Ma, J.; Zhu, H. M.; Chen, X. Y.; Wu, F.; Xia, C. T.; Xu, J.

2011-09-01

A Nd:(Lu0.5Gd0.5)2SiO5 (Nd:LGSO) crystal has been grown by the Czochralski method. The cell parameters were analyzed with X-ray diffraction (XRD). The Judd-Ofelt intensity parameters Ω2,4,6 were obtained to be 5.37, 1.63, and 5.57×10-20 cm2, respectively. The absorption and emission cross sections and branching ratios were calculated. The Nd:LGSO crystal reveals a broadband emission feature (FWHM = 9.8 nm), which shows potential as gain medium for ultrashort pulse lasers. The radiative and fluorescence lifetimes are 299 and 230 μs, respectively, resulting in a quantum efficiency of 77%. Pumped by a laser diode, the maximum continuous wave (CW) output power of 444 mW and a slope efficiency of 17.7% have been obtained.

Oxygen measurements in thin ribbon silicon

Energy Technology Data Exchange (ETDEWEB)

Hyland, S L; Ast, D G; Baghdadi, A

1987-03-01

The oxygen content of thin silicon ribbons grown by the dendritic web technique was measured using a modification of the ASTM method based on Fourier transform infrared spectroscopy. Web silicon was found to have a high oxygen content, ranging from 13 to 19 ppma, calculated from the absorption peak associated with interstitial oxygen and using the new ASTM conversion coefficient. The oxygen concentration changed by about 10% along the growth direction of the ribbon. In some samples, a shoulder was detected on the absorption peak. A similar shoulder in Czochralski grown material has been variously interpreted in the literature as due to a complex of silicon, oxygen, and vacancies, or to a phase of SiO/sub 2/ developed along dislocations in the material. In the case of web silicon, it is not clear which is the correct interpretation.

Crystal growth, spectroscopic characterization and laser operation of Tm3+ and Ho3+ codoped LiLuF4 crystal

Science.gov (United States)

Zhao, C. C.; Hang, Y.; Zhang, L. H.; He, X. M.; Yin, J. G.; Gong, J.; Yu, T.; Chen, W. B.

2012-02-01

Laser crystal Tm3+ and Ho3+ codoped LiLuF4 with high optical quality was grown by Czochralski technique. Its absorption and fluorescence spectra were investigated. A continuous wave output power of 1.12 W at 2066 nm was obtained with a slope efficiency of 24% by use of diode pumping. In the Q-switched mode, a slope efficiency of 18.9% and a maximum average power of 0.65 W were obtained.

Continuous Czochralski growth. Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness

Science.gov (United States)

The improvement of growth rates using radiation shielding and investigation of the crucible melt interaction for improved yields were emphasized. Growth runs were performed from both 15 and 16 inch diameter crucibles, producing 30 and 37 kg ingots respectively. Efforts to increase the growth rate of 150 mm diameter ingots were limited by temperature instabilities believed to be caused by undesirable thermal convections in the larger melts. The radiation shield improved the growth rate somewhat, but the thermal instability was still evident, leading to nonround ingots and loss of dislocation-free structure. A 38 kg crystal was grown to demonstrate the feasibility of producing 150 kg with four growth cycles. After the grower construction phase, the Hamco microprocessor control system was interfaced to the growth facility, including the sensor for automatic control of seeding temperature, and the sensor for automatic shouldering. Efforts focused upon optimization of the seeding, necking, and shoulder growth automation programs.

Hydrogenation of the ``new oxygen donor'' traps in silicon

Science.gov (United States)

Hölzlein, K.; Pensl, G.; Schulz, M.; Johnson, N. M.

1986-04-01

Hydrogenation was performed at moderate temperatures (≤300 °C) on Czochralski-grown Si samples that contained high concentrations of the oxygen-related ``new donor'' (ND) traps. From deep level transient spectroscopy, a comparison of spectra from untreated reference and hydrogenated material reveals that two different types of defect states contribute to the continuous energy distribution of the ND traps. The experimental and theoretical results further establish the ``SiOx interface'' model for the ND defects.

Spin-dependent recombination involving oxygen-vacancy complexes in silicon

OpenAIRE

Franke, David P.; Hoehne, Felix; Vlasenko, Leonid S.; Itoh, Kohei M.; Brandt, Martin S.

2014-01-01

Spin-dependent relaxation and recombination processes in $\\gamma$-irradiated $n$-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, t...

Thermal, spectral and laser characteristics of Nd doped La0.05Lu0.95VO4 crystal

Science.gov (United States)

Xu, Honghao; Han, Shuo; Yu, Haohai; Wang, Zhengping; Wang, Jiyang; Zhang, Huaijin; Tang, Dingyuan

2014-02-01

A 0.25 at% Nd doped La0.05Lu0.95VO4 mixed crystal was grown by the Czochralski method. The thermal properties including thermal expansion, specific heat, thermal diffusion, and thermal conductivity were systematically studied. Meanwhile the reasons for cracking of this mixed crystal were also discussed. The refractive index at wavelengths of 633 nm and 1539 nm were obtained with the prism coupling method. The polarized absorption and fluorescence spectra of the crystal were also measured at room temperature. It was found that the fluorescence lifetime of 4F3/2 manifold for Nd3+ in Nd:La0.05Lu0.95VO4 is about 90 μs. Diode-pumped continuous-wave (CW) laser operations at 1.06 μm with a- and c-cut crystals were demonstrated. For the a-cut crystal a maximum output power of 5.41 W was obtained at an incident pump power of 12.9 W. Different from the a-cut crystal, the laser spectrum of the c-cut crystal was found to be dual-wavelength.

A new promising nonlinear optical (NLO) crystal for visible and ultraviolet (UV) regions

Science.gov (United States)

Gheorghe, L.; Achim, A.; Voicu, F.

2012-08-01

Different La1-xGdxSc3(BO3)4 compounds with 0 ≤ x ≤ 0.5 were synthesized by solid-state reaction method. The X-ray diffraction studies revealed that the compounds containing more than 30 at.% Gd3+ ions have non-centrosymmetric trigonal structure (space group R32) and, consequently they are optically nonlinear. A crystal of LaxGdyScz(BO3)4 (x+y+z = 4) - LGSB with La0.75Gd0.5Sc2.75(BO3)4 starting melt composition and relatively small dimensions (about 10 mm in diameter and 25 mm in length) was grown by the Czochralski method. In order to confirm the NLO property, the as-grown crystal was subjected to second-harmonic generation (SHG) test. The nonlinear coefficient d11 of LGSB crystal has been preliminary estimated to be about 1.9 pm/V, which is larger than that of YAl3(BO3)4 (YAB) crystal. This article has been formally retracted, please refer to the article PDF for the full retraction notice.

Analysis of a mathematical model related to Czochralski crystal growth

Directory of Open Access Journals (Sweden)

Petr Knobloch

1998-01-01

Full Text Available This paper is devoted to the study of a stationary problem consisting of the Boussinesq approximation of the Navier–Stokes equations and two convection–diffusion equations for the temperature and concentration, respectively. The equations are considered in 3D and a velocity–pressure formulation of the Navier–Stokes equations is used. The problem is complicated by nonstandard boundary conditions for velocity on the liquid–gas interface where tangential surface forces proportional to surface gradients of temperature and concentration (Marangoni effect and zero normal component of the velocity are assumed. The velocity field is coupled through this boundary condition and through the buoyancy term in the Navier–Stokes equations with both the temperature and concentration fields. In this paper a weak formulation of the problem is stated and the existence of a weak solution is proved. For small data, the uniqueness of the solution is established.

Influence of Gamma-Ray Irradiation on Absorption and Fluorescent Spectra of Nd:YAG and Yb:YAG Laser Crystals

Institute of Scientific and Technical Information of China (English)

SUN Dun-Lu; ZHANG Qing-Li; XIAO Jing-Zhong; LUO Jian-Qiao; JIANG Hai-He; YIN Shao-Tang

2008-01-01

We investigate the influence of gamma-ray irradiation on the absorption and fluorescent spectra of Nd3+ : Y3Al5O12 (Nd:YAG) and Yb3+ :Y3Al5O12 (Yb:YAG) crystals grown by the Czochralski method. Two additional absorption (AA) bands induced by gamma-ray irradiation appear at 255nm and 340nm. The former is eontributed due to Fe3+ impurity, the latter is due to Fe2+ ions and F-type colour centres. The intensity of the excitation and emission spectra as well as the fluorescent lifetime of Nd:YAG crystal decrease after the irradiation of 100 Mrad gamma-ray. In contrast, the same dose irradiation does not impair the fluorescent properties of Yb: YA G crystal. These results indicate that Yb: YA G crystal possesses the advantage over Nd: YA G crystal that has better reliability for applications in harsh radiant environment.

Mechanoluminescence and photoluminescence of Pr3+ activated KMgF3 phosphor

International Nuclear Information System (INIS)

Dhoble, S.J.; Kher, R.S.; Furetta, C.

2003-01-01

A Czochralski method for the preparation of crystalline KMgF 3 : Pr phosphors are reported. Photoluminescence (PL) and mechanoluminescence (ML) characteristics are studied. Photoluminescence of Pr 3+ activated KMgF 3 shows the strong emission of Pr 3+ ions were observed at 498 and 650 nm by excitation of 213 mn. ML of KMgF 3 : Pr 3+ shows two peaks, which have been observed in ML intensity versus time curve. The ML peak shows the recombination of electrons with free radical (anion radical produced by γ-irradiation) released from two type traps during the mechanical pressure applied on KMgF 3 : Pr 3+ phosphor. It has a supra linear ML response with γ-ray exposure and a negligible fading. These properties of phosphor should be suitable in dosimetry of ionization relation using ML technique. Therefore the KMgF 3 : Pr 3+ phosphor proposed for ML dosimetry of ionization radiations. (Author)

Novel solid state lasers for Lidar applications at 2 μm

Science.gov (United States)

Della Valle, G.; Galzerano, G.; Toncelli, A.; Tonelli, M.; Laporta, P.

2005-09-01

A review on the results achieved by our group in the development of novel solid-state lasers for Lidar applications at 2 μm is presented. These lasers, based on fluoride crystals (YLF4, BaY2F8, and KYF4) doped with Tm and Ho ions, are characterized by high-efficiency and wide wavelength tunability around 2 μm. Single crystals of LiYF4, BaY2F8, and KYF4 codoped with the same Tm3+ and Ho3+ concentrations were successfully grown by the Czochralski method. The full spectroscopic characterization of the different laser crystals and the comparison between the laser performance are presented. Continuous wave operation was efficiently demonstrated by means of a CW diode-pumping. These oscillators find interesting applications in the field of remote sensing (Lidar and Dial systems) as well as in high-resolution molecular spectroscopy, frequency metrology, and biomedical applications.

Crystal growth, optical properties, and continuous-wave laser operation of Nd3+-doped CaNb2O6 crystal

International Nuclear Information System (INIS)

Cheng, Y; Xu, X D; Xiao, X D; Li, D Z; Zhao, C C; Zhou, S M; Xin, Z; Yang, X B; Xu, J

2009-01-01

Laser crystal Nd:CaNb 2 O 6 with excellent quality has been grown by Czochralski technique. The effective segregation coefficient of Nd 3+ was studied by X-ray fluorescence method. The polarized absorption spectra and the fluorescence spectra of Nd:CaNb 2 O 6 were measured at room temperature. The peak absorption cross section was calculated to be 6.202×10 -20 cm 2 with a broad FWHM of 7 nm at 808 nm for E ∥ a light polarization. The emission cross section at 1062 nm is 9.87×10 -20 cm 2 . We report what we believe to be the first demonstration of the continuous-wave Nd:CaNb 2 O 6 laser operation under diode pumping. Output power of 1.86 W at 1062 nm was obtained with a slope efficiency of 19% in the CW regime

Crystal growth, optical properties, and continuous-wave laser operation of Nd3+-doped CaNb2O6 crystal

Science.gov (United States)

Cheng, Y.; Xu, X. D.; Xin, Z.; Yang, X. B.; Xiao, X. D.; Li, D. Z.; Zhao, C. C.; Xu, J.; Zhou, S. M.

2009-10-01

Laser crystal Nd:CaNb2O6 with excellent quality has been grown by Czochralski technique. The effective segregation coefficient of Nd3+ was studied by X-ray fluorescence method. The polarized absorption spectra and the fluorescence spectra of Nd:CaNb2O6 were measured at room temperature. The peak absorption cross section was calculated to be 6.202×10-20 cm2 with a broad FWHM of 7 nm at 808 nm for E ∥ a light polarization. The emission cross section at 1062 nm is 9.87×10-20 cm2. We report what we believe to be the first demonstration of the continuous-wave Nd:CaNb2O6 laser operation under diode pumping. Output power of 1.86 W at 1062 nm was obtained with a slope efficiency of 19% in the CW regime.

Influence of some metal substitutions on the superconducting behaviour of molybdenum borocarbide. [Mo/sub 2-x/M/sub x/BC; M = Zr, Nb, Rh, Hf, Ta, or W

Energy Technology Data Exchange (ETDEWEB)

Lejay, P.; Chevalier, B.; Etourneau, J.; Hagenmuller, P. [Bordeaux-1 Univ., 33 - Talence (France)

1981-11-15

The superconducting properties of the Mosub(2-x)Msub(x)BC borocarbides (M equivalent to Zr, Nb, Rh, Hf, Ta, W) are reported. They have an Mo/sub 2/BC-type structure with orthorhombic symmetry and the space group Cmcm. Stoichiometric powder samples were prepared by arc melting. A large single crystal of Mo/sub 2/BC was obtained by a Czochralski-type method. The upper limit of x depends mainly on the size of the M atoms. A study of the magnetization as a function of field at different temperatures shows that all borocarbides are type II superconductors. Resistivity measurements give generally a critical temperature Tsub(cr) above 4.2 K. Tsub(cr) and the critical fields Hsub(c2) increase for rhodium substitution but decrease in other cases. For comparison the superconducting properties are discussed in terms of the valence electron concentration and the molar volume.

Influence of some metal substitutions on the superconducting behaviour of molybdenum borocarbide

Energy Technology Data Exchange (ETDEWEB)

Lejay, P.; Chevalier, B.; Etourneau, J.; Hagenmuller, P.

1981-11-15

The superconducting properties of the Mosub(2-x)Msub(x)BC borocarbides (M identical Zr, Nb, Rh, Hf, Ta, W) are reported. They have an Mo/sub 2/BC-type structure with orthorhombic symmetry and the space group Cmcm. Stoichiometric powder samples were prepared by arc melting. A large single crystal of Mo/sub 2/BC was obtained by a Czochralski-type method. The upper limit of x depends mainly on the size of the M atoms. A study of the magnetization as a function of field at different temperatures shows that all borocarbides are type II superconductors. Resistivity measurements give generally a critical temperature Tsub(cr) above 4.2 K. Tsub(cr) and the critical fields Hsub(c)/sub 2/ increase for rhodium substitution but decrease in the other cases. For comparison the superconducting properties are discussed in terms of the valence electron concentration and the molar volume.

Optical properties of ion-implanted InP and GaAs: Selectivity-excited photoluminescence spectra

International Nuclear Information System (INIS)

Makita, Yunosuke; Yamada, Akimasa; Kimura, Shinji; Niki, Shigeru; Yoshinaga, Hiroshi; Matsumori, Tokue; Iida, Tsutomu; Uekusa, Ichiro

1993-01-01

Implantation of Mg+ ions was carried out into high purity InP grown by liquid encapsulated Czochralski method. Mg+ ion-implanted InP presented the formation of plural novel emissions with increasing Mg concentration, [Mg] in the low temperature photoluminescence spectra. Selectively-excited photoluminescence (SPL) measurements were made to examine the features of two-hole replicas pertinent to the emissions of excitons bound to neutral Mg and residual Zn acceptors. Systematic variation of the emission intensities from the two types of two-hole replicas was found to be utilized for the evaluation of ion-implanted materials. The significant discrepancy of emission spectra between PL and SPL was attributed to the difference of the depth examined by using the excitation light with high and low absorption coefficient. The results revealed that the diffusion of ion-implanted Mg is extremely enhanced when [Mg] exceeds 1x10 17 cm -3

Doping with lead of single crystals of solid solutions of Sbsub(1,5)Bisub(0,5)Tlsub(3)-Bisub(2)Sesub(3)

International Nuclear Information System (INIS)

Abrikosov, N.Kh.; Ivanova, L.D.; Polikarpova, N.V.; Galechyan, M.G.

1984-01-01

By the Czochralski method with liquid phase additional feeding single crystals of solid solutions of the Sbsub(1.5)Bisub(0.5)Tesub(3)-Bisub(2)Sesub(3) system with 0, 10 and 15 mol.% of Bi 2 Se 3 content doped with lead up to 1.37 at/cm 3 are grown. Lead content in crystals and alloys is determined by the atom-abmethod using the scale of standard solutions. It has been found that the effective coefficient of lead distribution in investigated solutions is approximately 0.5. It is shown that lead addition leads to increase of electric conductivity and heat conductivity and decrease of thermoelectric coeffcient at the expense of current carriers concentration growth, the lead in crystals of solid solutions of the Sbsub(1.5)Bisub(0.5)Tesub(3)-Bisub(2)Sesub(3) system being a single charge acceptor

Crystal growth and piezoelectric properties of Ca3Ta(Ga0.9Sc0.1)3Si2O14 bulk single crystal

Science.gov (United States)

Igarashi, Yu; Yokota, Yuui; Ohashi, Yuji; Inoue, Kenji; Yamaji, Akihiro; Shoji, Yasuhiro; Kamada, Kei; Kurosawa, Shunsuke; Yoshikawa, Akira

2018-03-01

Ca3Ta(Ga0.9Sc0.1)3Si2O14 langasite-type single crystal with a diameter of 1 in. was grown by Czochralski (Cz) method. Obtained crystal had good crystallinity and its lattice constants exceeded those of Ca3TaGa3Si2O14 (CTGS) according to the X-ray analysis. A crack-free specimen cut from the grown crystal was used for the measurements of dielectric constant ε11T/ε0, electromechanical coupling factor k12, and piezoelectric constant d11. The accuracies of these measurements were better than those for the crystal grown by micro-pulling-down (μ-PD) method. Substitution of Ga with Sc resulted modification of these constants in the directions opposite to those observed after partial substitution of Ga (of CTGS) with Al. This suggests that increase of |d14| was most probably associated with enlargement of average size of the Ga sites. The crystal reported here had greater dimensions as compared to analogous crystals grown by the μ-PD method. As a result, accuracy of determination of acoustic constants of this material may be improved.

Thermal properties and continuous-wave laser performance of Yb:LuVO4 crystal

Science.gov (United States)

Cheng, Y.; Zhang, H. J.; Yu, Y. G.; Wang, J. Y.; Tao, X. T.; Liu, J. H.; Petrov, V.; Ling, Z. C.; Xia, H. R.; Jiang, M. H.

2007-03-01

A laser crystal of Yb:LuVO4 with high optical quality was grown by the Czochralski technique. Its thermal properties including specific heat, thermal expansion coefficients, and thermal conductivities along the a- and c-axis have been measured for the first time. Continuous-wave laser output up to 3.5 W at 1031 nm was obtained at room temperature through end-pumping by a high-power diode laser. The corresponding optical conversion efficiency was 43% and the slope efficiency was 72%.

Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

OpenAIRE

Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

2011-01-01

The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucle...

Carrier concentration effects on radiation damage in InP

International Nuclear Information System (INIS)

Yamaguchi, M.; Ando, K.; Uemura, C.

1984-01-01

Minority carrier diffusion length and carrier concentration studies have been made on room-temperature 1-MeV electron irradiated liquid-encapsulated Czochralski grown Zn-doped p-InP. The damage rate for the diffusion length and carrier removal rate due to irradiation have been found to strongly decrease with an increase in the carrier concentration in InP. These phenomena suggest that the induced defects interact with impurities in InP. A preliminary study on the annealing behavior has also been performed

Vergleich relevanter Parameter von Multipixelsensoren für Spurdetektoren nach Bestrahlung mit hohen Proton- und Neutronflüssen

CERN Document Server

Bergholz, Matthias; Reif, Jürgen; Husemann, Ulrich

2016-01-01

The further increase of the luminosity of the Large Hadron Collider ( LHC ) at CERN requires new sensors for the tracking detector of the Compact Muon Soleniod ( CMS ) experiment. These sensors must be more radiation hard and of a finer granularity to lower the occupancy. In addition the new sensor modules must have a lower material budget and have to be self triggering. Sensor prototypes, the so called “ MPix ”-sensors, produced on different materials were investigated for their radiation hardness. These sensors were fully charac- terized before and after irradiation. Of particular interest was the comparison of different bias methods, different materials and the influence of various geometries. The degeneration rate differs for the different sensor materials. The increase of the dark current of Float-Zone-Silicon is stronger for thicker sensors and less than for Magnetic-Czochralski-Silicon sensors. Both tested bias structures are damaged by the irradiation. The poly silicon resis- tance increases after...

The α-particle excited scintillation response of YAG:Ce thin films grown by liquid phase epitaxy

International Nuclear Information System (INIS)

Prusa, Petr; Nikl, Martin; Mares, Jiri A.; Nitsch, Karel; Beitlerova, Alena; Kucera, Miroslav

2009-01-01

Y 3 Al 5 O 12 :Ce (YAG:Ce) thin films were grown from PbO-,BaO-, and MoO 3 -based fluxes using the liquid phase epitaxy (LPE) method. Photoelectron yield, its time dependence within 0.5-10 μs shaping time, and energy resolution of these samples were measured under α-particle excitation. For comparison a sample of the Czochralski grown bulk YAG:Ce single crystal was measured as well. Photoelectron yield values of samples grown from the BaO-based flux were found superior to other LPE films and comparable with that of the bulk single crystal. The same is valid also for the time dependence of photoelectron yield. Obtained results are discussed taking into account the influence of the flux and technology used. Additionally, α particle energy deposition in very thin films is modelled and discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Magnetic and transport properties of Sm7Rh3 single crystal

International Nuclear Information System (INIS)

Tsutaoka, Takanori; Noguchi, Daisuke; Nakamori, Yuko; Nakamoto, Go; Kurisu, Makio

2013-01-01

A Sm 7 Rh 3 single crystal with Th 7 Fe 3 -type hexagonal structure was grown by the Czochralski method. The magnetic and transport measurements revealed a uniaxial magnetocrystalline anisotropy in the magnetic susceptibility, magnetization and electrical resistivity. Sm 7 Rh 3 was found to exhibit antiferromagnetic transition at T N =54.0 K and another magnetic transition at T t =25.0 K. The specific heat data clearly showed the bulk nature of paramagnetic to ordered magnetic phase transition by the presence of a sharp peak at T N and a small anomaly at T t . The paramagnetic susceptibility does not obey the Curie–Weiss law, attributing to the temperature independent Van Vleck contribution and Pauli paramagnetism of conduction electrons. Metamagnetic phase transitions were observed along the c-axis in the ordered states. The magnetic field H–temperature T phase diagram was constructed. Anisotropic paramagnetic electrical resistivity showed the small negative temperature coefficients

Structural, mechanical and light yield characterisation of heat treated LYSO:Ce single crystals for medical imaging applications

CERN Document Server

Mengucci, P; Auffray, E; Barucca, G; Cecchi, C; Chipaux, R; Cousson, A; Davì, F; Di Vara, N; Rinaldi, D; Santecchia, E

2015-01-01

Five single crystals of cerium-doped lutetium yttrium oxyorthosilicate (LYSO:Ce) grown by the Czochralski method were submitted to structural characterisation by X-ray (XRD) and neutron (ND) diffraction, scanning (SEM) and transmission (TEM) electron microscopy and energy dispersive microanalysis (EDS). The Ultimate Tensile Strength (UTS), the Young Modulus (YM) and the Light Yield (LY) of the samples were also measured in order to correlate the mechanical and the optical behaviour of the crystals with the characteristics of their microstructure. Two of the samples analysed were also heat treated at 300 °C for 10 h to evidence possible variations induced by the temperature in the optical and mechanical response of the crystals. Results showed that the mean compositional variations evidenced by the structural analyses do not affect the mechanical and optical behaviour of the samples. On the contrary, the thermal treatment could induce the formation of coherent spherical particles (size 10 to 15 nm), not unifo...

A novel magneto-optical crystal Yb:TbVO4

Science.gov (United States)

Zhu, Xianchao; Tu, Heng; Hu, Zhanggui

2018-04-01

Highly transparent Yb:TbVO4 single crystal with dimensions of Ø27 × 41 mm3 alomost without scattering defects has been successfully grown by Czochralski technique. The spectra, thermal properties and laser-induced damage threshold were investigated in detailed. The Faraday rotation (FR) measurement was carried out by means of extinction method. The Verdet constant comes up to 80 rad m-1 T-1 at 1064 nm, significantly larger than TbVO4 (58 rad m-1 T-1) and TGG (40 rad m-1 T-1) reported. Meanwhile, the as-grown crystal presents lower absorption coefficient and higher magneto-optical figure of merit at measured wavelength in comparison with TGG. Moreover, the crystal exhibits a substantially improved extinction ratio (42 dB) in contrast with TbVO4 (29 dB), and exceeds the highest value of TGG (40 dB). These advantages make Yb:TbVO4 a highly promising magneto-optical material candidate for optical isolators in the visible-near infrared region.

Single crystal growth and nonlinear optical properties of Nd3+ doped STGS crystal for self-frequency-doubling application

Science.gov (United States)

Chen, Feifei; Wang, Lijuan; Wang, Xinle; Cheng, Xiufeng; Yu, Fapeng; Wang, Zhengping; Zhao, Xian

2017-11-01

The self-frequency-doubling crystal is an important kind of multi-functional crystal materials. In this work, Nd3+ doped Sr3TaGa3Si2O14 (Nd:STGS) single crystals were successfully grown by using Czochralski pulling method, in addition, the nonlinear and laser-frequency-doubling properties of Nd:STGS crystals were studied. The continuous-wave laser at 1064 nm was demonstrated along different physical axes, where the maximum output power was obtained to be 295 mW for the Z-cut samples, much higher than the Y-cut (242 mW) and X-cut (217 mW) samples. Based on the measured refractive indexes, the phase matching directions were discussed and determined for type I (42.5°, 30°) and type II (69.5°, 0°) crystal cuts. As expected, self-frequency-doubling green laser at 529 nm was achieved with output powers being around 16 mW and 12 mW for type I and type II configurations, respectively.

Synthesis and characterization of solid solutions in ABCO 4 system

Science.gov (United States)

Novoselov, A.; Zimina, G.; Komissarova, L.; Pajaczkowska, A.

2006-01-01

Formation of continuous solid solutions with a tetragonal structure of K 2NiF 4-type was investigated by direct solid-state synthesis, carbonate precipitations, the freeze-drying method and the Czochralski crystal growth technique. In the systems of SrLaAlO 4-CaLaAlO 4, SrNdAlO 4-CaNdAlO 4, SrPrAlO 4-CaPrAlO 4, SrLaAlO 4-SrLaGaO 4 and SrLaAlO 4-SrLaFeO 4 solid solutions are formed in the whole concentration range (0.0⩽ x⩽1.0) and in the systems of SrLaAlO 4-SrLaMnO 4 and SrLaAlO 4-SrLaCrO 4 in the limited compositional interval of (0.0⩽ x⩽0.20) and (0.0⩽ x⩽0.25), respectively, with composition dependency of lattice constants following Vegard's law.

Structure, spectroscopic properties and laser performance of Nd:YNbO4 at 1066 nm

Science.gov (United States)

Ding, Shoujun; Peng, Fang; Zhang, Qingli; Luo, Jianqiao; Liu, Wenpeng; Sun, Dunlu; Dou, Renqin; Sun, Guihua

2016-12-01

We have demonstrated continuous wave (CW) laser operation of Nd:YNbO4 crystal at 1066 nm for the first time. A maximum output power of 1.12 W with the incident power of 5.0 W is successfully achieved corresponding to an optical-to-optical conversion efficiency of 22.4% and a slope efficiency of 24.0%. The large absorption cross section (8.7 × 10-20 cm2) and wide absorption band (6 nm) at around 808 nm indicates the good pumping efficiency by laser diodes (LD). The small emission cross section (29 × 10-20 cm2) and relative long lifetime of the 4F3/2 → 4I11/2 transition indicates good energy storage capacity of Nd:YNbO4. Moreover, the raw materials of Nd:YNbO4 are stable, thus, it can grow high-quality and large-size by Czochralski (CZ) method. Therefore the Nd:YNbO4 crystal is a potentially new laser material suitable for LD pumping.

Photoluminescence of highly compensated GaAs doped with high concentration of Ge

Science.gov (United States)

Watanabe, Masaru; Watanabe, Akira; Suezawa, Masashi

1999-12-01

We have studied the photoluminescence (PL) properties of Ge-doped GaAs crystals to confirm the validity of a theory developed by Shklovskii and Efros to explain the donor-acceptor pair (DAP) recombination in potential fluctuation. GaAs crystals doped with Ge of various concentrations were grown by a liquid-encapsulated Czochralski method. They were homogenized by annealing at 1200°C for 20 h under the optimum As vapor pressure. Both quasi-continuous and time-resolved PL spectra were measured at 4.2 K. The quasi-continuous PL spectra showed that the peak position shifted to lower energy as the Ge concentration increased, which was consistent with the Shklovskii and Efros's theory. Under very strong excitation in time-resolved measurements, the exciton peak appeared within short periods after excitation and then the peak shifted to that of DAP recombination. This clearly showed that the potential fluctuation disappeared under strong excitation and then recovered as the recombination proceeded.

Effects of Zr4+ codoping on the Lu0.8Sc0.2BO3:Ce scintillation materials

International Nuclear Information System (INIS)

Wu, Yuntao; Ren, Guohao; Ding, Dongzhou; Shang, Shanshan; Sun, Dandan; Zhang, Guoqing; Wang, Jiayu; Pan, Shangke; Yang, Fan

2013-01-01

Both Zr-codoped Lu 0.8 Sc 0.2 BO 3 :Ce polycrystalline powders and single crystals were obtained by solid-state reaction and Czochralski method, respectively. The effects of Zr codoping on the optical absorption, Ce 3+ /Ce 4+ ratio, scintillation efficiency, decay time and point defect in Lu 0.8 Sc 0.2 BO 3 :Ce materials were examined systematically. Our results show that there is no positive contribution of Zr 4+ ion codoping to the scintillation efficiency. And the reasons for the deterioration of scintillation efficiency by codoping Zr 4+ were revealed. - Highlights: ► No positive contribution of the Zr 4+ ions on the scintillation efficiency was found. ► New optical absorption band was in the region from 200 to 225 nm. ► Continuously accelerated decay time indicated that Zr 4+ codoping induced new point defects. ► The induced hole trap located at 1.91 eV below the conduction band.

Crystal growth, polarized spectroscopy and Judd-Ofelt analysis of Tb:YAlO3.

Science.gov (United States)

Liu, Bin; Shi, Jiaojiao; Wang, Qingguo; Tang, Huili; Liu, Junfang; Zhao, Hengyu; Li, Dongzhen; Liu, Jian; Xu, Xiaodong; Wang, Zhanshan; Xu, Jun

2018-07-05

Tb 3+ -doped YAlO 3 (YAP) single crystal was grown by Czochralski (Cz) method. Based on the polarized absorption spectra, the spectroscopic parameters were calculated to be Ω 2 =3.49×10 -20 cm 2 , Ω 4 =5.87×10 -20 cm 2 and Ω 6 =2.55×10 -20 cm 2 , and then the spontaneous transition rate, fluorescent branching ratio and radiative lifetime of 5 D 4 multiplet were obtained. The yellow emission cross sections of 5 D 4 → 7 F 4 transition were calculated to be 1.72×10 -22 cm 2 , 2.73×10 -22 cm 2 and 2.65×10 -22 cm 2 for a, b and c polarization, respectively. The fluorescence lifetime of the 5 D 4 multiplet was fitted to be 1.72ms. All the data indicate that Tb:YAP crystal is a promising candidate for yellow laser operation. Copyright © 2018. Published by Elsevier B.V.

Synchrotron topography of grow defects in GdCa4O(BO3)3

International Nuclear Information System (INIS)

Wierzbicka, E.; Lefeld-Sosnowska, M.; Wierzchowski, W.; Wieteska, K.; Graeff, W.

2005-01-01

Gadolinium calcium oxyborane (GdCOB) is a perspective material, especially in the optoelectronics. GdCOB exhibits excellent nonlinear optical parameters and can be easily doped with Nd 3+ , Yb 3+ or Er 3+ ions. To be applied in the optoelectronics it is necessary to obtain crystals with small number of defects, which cause unwanted tensions changing optical properties of the material. The aim of the work was analysis of the defects distribution in the GdCOB and finding its dependence on the crystal growing conditions. Crystals were grown in the Institute of Electronic Materials Technology (ITME) using Czochralski method. Analyses of the crystal quality are the first studies performed using the synchrotron beam reflection topography in the white beam, monochromatic and projecting transmission topography and the Lang reflections. It has been shown, that the main observed defects are the dislocations, which occur in all crystals of different density depending on the grown parameters [pl

Optical spectroscopy of Nd3+/Mg2+ co-doped LiTaO3 laser crystal

International Nuclear Information System (INIS)

Zhang, P X; Hang, Y; Gong, J; Zhao, C C; Yin, J G; Zhang, L H; Zhu, Y Y

2013-01-01

A Nd 3+ and Mg 2+ co-doped LiTaO 3 single crystal has been grown successfully by the Czochralski method. The polarized absorption spectra of the crystal were measured and investigated. The peak absorption cross-sections at 806 and 810 nm were 4.17 × 10 −20 cm 2 and 4.47 × 10 −20 cm 2 with a full width at half maximum of 29 and 17 nm for σ- and π-polarization, respectively. Based on the Judd–Ofelt theory, the spectral parameters of Nd 3+ in the as-grown crystal were investigated in detail. Moreover, the emission probabilities, branching ratio and radiative lifetime for the transitions from 4 F 3/2 were calculated. The radiative lifetime of 4 F 3/2 was calculated to be 159 μs and the luminescent quantum efficiency of the 4 F 3/2 manifold was about 81.13%. The results were also compared with other Nd 3+ doped crystals. (paper)

Effects of Nernst-Ettinghausen, Seebeck and Hall in Sb sub 2 Te sub 3 monocrystals

CERN Document Server

Zhitinskaya, M K; Ivanova, L D

2002-01-01

In Sb sub 2 Te sub 3 top-quality single crystals grown following the Czochralski method within 77-420 K range one measured temperature dependences of the following components of kinetic coefficients: electrical conductivity within sigma sub 1 sub 1 chip plane, of the Seebeck S sub 1 sub 1 and S sub 3 sub 3 , of the Hall R sub 1 sub 2 sub 3 and R sub 3 sub 2 sub 1 and of the Nernst-Ettinghausen Q sub 1 sub 2 sub 3. One analyzed the derived results on the basis of the phenomenological theory. It is shown that the essential peculiarities of the experimental data may be explained in terms of a two-region model with anisotropy of mobility of the first and second types holes towards the chip (epsilon sub g approx = 0.3 eV), as well as, the energy gap between the ground and auxiliary extremes of the valence band (DELTA epsilon subupsilon approx 0.1 eV)

Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection

CERN Document Server

Verbitskaya, E; Ivanov, A; Strokan, N; Vasilev, V; Markov, A; Polyakov, A; Gavrin, V; Kozlova, Y; Veretenkin, E; Bowles, T J

2000-01-01

The results on electrical characteristics and charge collection efficiency in the detectors from bulk SI GaAs developed as a material for solar neutrino spectroscopy are presented. SI GaAs crystals were grown by the Czochralski method. The changes in the stoichiometric components are permanently controlled. It is shown that the performance of GaAs p sup + -i-n sup + structures provided the range of operational reverse voltage up to 1 kV. Measurement of deep level spectra and their analysis reveal the dominant deep levels - hole traps E sub v +0.51 and +0.075 eV in GaAs grown from stoichiometric and nonstoichiometric melts, respectively. Investigation of carrier transport properties and bulk homogeneity evinced in charge collection efficiency has shown advantageous results for SI GaAs grown from stoichiometric melt. The reduction of carrier transport parameters and charge collection efficiency in GaAs grown from nonstoichiometric melt is analyzed taking into consideration formation of the hole trap E sub v +0....

Sensitivity of triple-crystal X-ray diffractometers to microdefects in silicon

International Nuclear Information System (INIS)

Molodkin, V.B.; Olikhovskii, S.I.; Len, E.G.; Kislovskii, E.N.; Kladko, V.P.; Reshetnyk, O.V.; Vladimirova, T.P.; Sheludchenko, B.V.

2009-01-01

The dynamical theory, which describes both diffraction profiles and reciprocal space maps measured from imperfect crystals with account for instrumental factors of triple-crystal diffractometer (TCD), has been developed for adequate quantitative characterization of microdefects. Analytical expressions for coherent and diffuse scattering (DS) intensities measured by TCD in the Bragg diffraction geometry have been derived by using the generalized statistical dynamical theory of X-ray scattering in real single crystals with randomly distributed defects. The DS intensity distributions from single crystals containing clusters and dislocation loops have been described by explicit analytical expressions. Particularly, these expressions take into account anisotropy of displacement fields around defects with discrete orientations. Characteristics of microdefect structures in silicon single crystals grown by Czochralsky- and float-zone methods have been determined by analyzing the measured TCD profiles and reciprocal space maps. The sensitivities of reciprocal space maps and diffraction profiles to defect characteristics have been compared. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

Cooperative down-conversion of UV light in disordered scheelitelike Yb-doped NaGd(MoO4)2 and NaLa(MoO4)2 crystals

Science.gov (United States)

Subbotin, K. A.; Osipova, Yu. N.; Lis, D. A.; Smirnov, V. A.; Zharikov, E. V.; Shcherbakov, I. A.

2017-07-01

Concentration series of disordered scheelitelike Yb:NaGd(MoO4)2 and Yb:NaLa(MoO4)2 single crystals are grown by the Czochralski method. The actual concentrations of Yb3+ ions in the crystals are determined by optical-absorption spectroscopy. The luminescence of Yb3+ ions in these crystals in the region of 1 μm is studied under UV and IR excitation. In the case of UV excitation, this luminescence appears as a result of nonradiative excited state energy transfer from donor centers of unknown nature to ytterbium. The character of the concentration dependence of Yb3+ luminescence indicates that the energy transfer at high Yb concentrations occurs with active participation of a cooperative mechanism, according to which the excitation energy of one donor center is transferred simultaneously to two Yb3+ ions. In other words, the quantum yield of this transfer exceeds unity, which can be used to increase the efficiency of crystalline silicon (c-Si) solar cells.

Comparative study of optical and scintillation properties of YVO4, (Lu0.5Y0.5)VO4, and LuVO4 single crystals

International Nuclear Information System (INIS)

Fujimoto, Yutaka; Yanagida, Takayuki; Yokota, Yuui; Chani, Valery; Kochurikhin, Vladimir V.; Yoshikawa, Akira

2011-01-01

Optical and scintillation properties of YVO 4 , (Lu 0.5 Y 0.5 )VO 4 , and LuVO 4 single crystals grown by the Czochralski (CZ) method with RF heating system are compared. All vanadate crystals show high transmittance (∼80%) in the 400-900 nm wavelength range. In both photo- and radio-luminescence spectra, intense peak around 400-500 nm, which was ascribed to the transition from triplet state of VO 4 3- , was clearly observed. The main decay time component was about 38 μs (YVO 4 ), 18 μs ((Lu 0.5 Y 0.5 )VO 4 ), and 17 μs (LuVO 4 ) under 340 nm excitation. The scintillation light yields of YVO 4 , (Lu 0.5 Y 0.5 )VO 4 , and LuVO 4 crystals (obtained from the 137 Cs excited pulse height spectra) were evaluated to be about 11,200, 10,700, and 10,300 ph/MeV, respectively.

Thermal neutron imaging with rare-earth-ion-doped LiCaAlF{sub 6} scintillators and a sealed {sup 252}Cf source

Energy Technology Data Exchange (ETDEWEB)

Kawaguchi, Noriaki, E-mail: famicom@mail.tagen.tohoku.ac.jp [Tokuyama Corporation, Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 (Japan); IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yanagida, Takayuki; Fujimoto, Yutaka; Yokota, Yuui; Kamada, Kei [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Fukuda, Kentaro; Suyama, Toshihisa [Tokuyama Corporation, Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 (Japan); Watanabe, Kenichi; Yamazaki, Atsushi [Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Chani, Valery [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center, Tohoku University, Sendai 980-8579 (Japan)

2011-10-01

Thermal neutron imaging with Ce-doped LiCaAlF{sub 6} crystals has been performed. The prototype of the neutron imager using a Ce-doped LiCaAlF{sub 6} scintillating crystal and a position sensitive photomultiplier tube (PSPMT) which had 64 multi-channel anode was developed. The Ce-doped LiCaAlF{sub 6} single crystal was grown by the Czochralski method. A plate with dimensions of a diameter of 50x2 mm{sup 2} was cut from the grown crystal, polished, and optically coupled to PSPMT by silicone grease. The {sup 252}Cf source (<1 MBq) was sealed with 43 mm of polyethylene for neutron thermalization. Alphabet-shaped Cd pieces with a thickness of 2 mm were used as a mask for the thermal neutrons. After corrections for the pedestals and gain of each pixel, we successfully obtained two-dimensional neutron images using Ce-doped LiCaAlF{sub 6}.

Quasi-continuously pumped passively mode-locked 2.4% doped Nd:YAG oscillator-amplifier system in a bounce geometry

Science.gov (United States)

Jelínek, Michal; Kubecek, Vaclav; Cech, Miroslav; Hirsl, Petr

2010-02-01

We report on oscillator-amplifier system based on two highly doped 2.4 at. % crystalline Czochralski grown Nd:YAG crystals in a diode pumped bounce geometry configuration under quasi-continuous pumping. The oscillator was passively mode-locked by the semiconductor saturable absorber in transmission mode. The output pulse train consisted of 5 pulses with total energy of 270 μJ and pulse duration of 75 ps. The output train from the oscillator was amplified to the energy of 1 mJ by single pass amplifier.

Study of structural and optical properties of YAG and Nd:YAG single crystals

Energy Technology Data Exchange (ETDEWEB)

Kostić, S. [Institute of Physics, University of Belgrade, P.O. Box 68, Pregrevica 118, Zemun, Belgrade (Serbia); Lazarević, Z.Ž., E-mail: lzorica@yahoo.com [Institute of Physics, University of Belgrade, P.O. Box 68, Pregrevica 118, Zemun, Belgrade (Serbia); Radojević, V. [Faculty of Technology and Metallurgy, University of Belgrade, Belgrade (Serbia); Milutinović, A.; Romčević, M.; Romčević, N.Ž. [Institute of Physics, University of Belgrade, P.O. Box 68, Pregrevica 118, Zemun, Belgrade (Serbia); Valčić, A. [Faculty of Technology and Metallurgy, University of Belgrade, Belgrade (Serbia)

2015-03-15

Highlights: • Transparent YAG and pale pink Nd:YAG single crystals were produced by the Czochralski technique. • Growth mechanisms and shape of the liquid/solid interface and incorporation of Nd{sup 3+} were studied. • The structure of the crystals was investigated by X-ray diffraction, Raman and IR spectroscopy. • The 15 Raman and 17 IR modes were observed. • The obtained YAG and Nd:YAG single crystals were without core and of good optical quality. - Abstract: Yttrium aluminum garnet (YAG, Y{sub 3}Al{sub 5}O{sub 12}) and yttrium aluminum garnet doped with neodymium (Nd:YAG) single crystals were grown by the Czochralski technique. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. As a result of our experiments, the transparent YAG and pale pink Nd:YAG single crystals were produced. The obtained crystals were studied by X-ray diffraction, Raman and IR spectroscopy. The crystal structure was confirmed by XRD. The 15 Raman and 17 IR modes were observed. The Raman and IR spectroscopy results are in accordance with X-ray diffraction analysis. The obtained YAG and Nd:YAG single crystals were without core and of good optical quality. The absence of a core was confirmed by viewing polished crystal slices. Also, it is important to emphasize that the obtained Nd:YAG single crystal has a concentration of 0.8 wt.% Nd{sup 3+} that is characteristic for laser materials.

Correlations between TD annihilation and oxygen precipitation in Czochralski-grown silicon

International Nuclear Information System (INIS)

Reiche, M.

1989-01-01

Results of two-stage annealing experiments are presented including preannealing at T o C (TD formation) and a second annealing step at T=550 to 850 o C in order to study the annihilation of TD's and their influence on the oxygen precipitation. The investigations show that (1) TD's cannot act as nuclei for oxide precipitates and that (2) their annihilation, connected with the increased formation of Si I induced defects (RLD's), proves TD's to consist also of self-interstitials. (author) 11 refs., 4 figs

VV and VO2 defects in silicon studied with hybrid density functional theory

KAUST Repository

Christopoulos, Stavros Richard G

2014-12-07

The formation of VO (A-center), VV and VO2 defects in irradiated Czochralski-grown silicon (Si) is of technological importance. Recent theoretical studies have examined the formation and charge states of the A-center in detail. Here we use density functional theory employing hybrid functionals to analyze the formation of VV and VO2 defects. The formation energy as a function of the Fermi energy is calculated for all possible charge states. For the VV and VO2 defects double negatively charged and neutral states dominate, respectively.

A comparative study of the Si diodes of N type applied to high-dose range dosimetry

International Nuclear Information System (INIS)

Pascoalino, Kelly Cristina da Silva; Goncalves, Josemary Angelica Correa; Tobias, Carmen Cecilia Bueno

2011-01-01

This work presents the results of the comparative studies of floating-zone (Fz) and magnetic Czochralski (MCz) n-type silicon diodes as gamma dosimeters. The devices were irradiated with gamma rays from 60 Co source, Gammacell 220, at Radiation Technology Center (CTR-IPEN/CNEN-SP) with the dose rate of 2 kGy/h. The results with total absorbed doses of approximately 1 MGy showed that the devices studied are tolerant to radiation damages and then can be used as an online dosimeter in high doses radiation processing. (author)

Characteristics of accumulation of recombination centers due to irradiation of p-type Si

International Nuclear Information System (INIS)

Kazakevich, L.A.; Lugakov, P.F.; Filippov, I.M.

1989-01-01

Irradiation of Czochralski-grown p-type Si single crystals results primarily in creation of recombination-active radiation defects which give rise to a donor energy level at E v + 0.30-0.38 eV in the band gap. The ideas on the structure and mechanisms of formation of these radiation defects are continuously evolving and at present the most widely held view is that which assumes that the K centers can be carbon-oxygen-divacancy complexes or interstitial carbon-interstitial oxygen pairs. The authors investigated the recombination properties of such centers

G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach

KAUST Repository

Wang, H.

2014-05-13

Electronic structure calculations employing screened hybrid density functional theory are used to gain fundamental insight into the interaction of carbon interstitial (Ci) and substitutional (Cs) atoms forming the CiCs defect known as G-center in silicon (Si). The G-center is one of the most important radiation related defects in Czochralski grown Si. We systematically investigate the density of states and formation energy for different types of CiCs defects with respect to the Fermi energy for all possible charge states. Prevalence of the neutral state for the C-type defect is established.

Photoluminescence due to early stage of oxygen precipitation in multicrystalline Si for solar cells

Science.gov (United States)

Higuchi, Fumito; Tajima, Michio; Ogura, Atsushi

2017-07-01

To analyze the early stage of oxygen precipitation in n-type multicrytalline Si, the spectral change of photoluminescence (PL) induced by thermal treatment at 450-650 °C was investigated in relation to the changes in excess donor and interstitial oxygen concentrations. We observed the characteristic PL bands in the near-band-edge region and sharp lines in the deep-level region in correspondence with the generation of thermal donors and new donors. The observed PL spectral variation is essentially the same as that in Czochralski-grown Si annealed at 450-650 °C.

Electrical and Structural Characterization of Web Dendrite Crystals

Science.gov (United States)

Schwuttke, G. H.; Koliwad, K.; Dumas, K. A.

1985-01-01

Minority carrier lifetime distributions in silicon web dendrites are measured. Emphasis is placed on measuring areal homogeneity of lifetime, show its dependency on structural defects, and its unique change during hot processing. The internal gettering action of defect layers present in web crystals and their relation to minority carrier lifetime distributions is discussed. Minority carrier lifetime maps of web dendrites obtained before and after high temperature heat treatment are compared to similar maps obtained from 100 mm diameter Czochralski silicon wafers. Such maps indicate similar or superior areal homogeneity of minority carrier lifetime in webs.

Study on grown-in defects in CZ-Si by positron annihilation

International Nuclear Information System (INIS)

Nakagawa, S.; Hori, F.; Oshima, R.

2004-01-01

In order to study the nature of grown-in microdefects of a silicon wafer taken from a czochralski-grown single crystal (CZ-Si) in which ring oxidation-induced stacking faults (ring-OSF) are formed after oxidation heat treatment, positron annihilation coincidence Doppler broadening experiments (CDB) have been performed. Vacancy-type defects were detected in the central region of a wafer of an as-grown crystal, and they were changed with annealing. It was confirmed that different types of defects were formed in the regions of outside and inside of the ring-OSF. (orig.)

Growth and characterization of the La{sub 3}Ga{sub 4.85}Fe{sub 0.15}SiO{sub 14} piezoelectric single crystal

Energy Technology Data Exchange (ETDEWEB)

Dou, Renqin [Chinese Academy of Sciences, The Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China); University of Science and Technology of China, Hefei (China); Liu, Wenpeng; Zhang, Qingli; Ding, Shoujun; Sun, Dunlu [Chinese Academy of Sciences, The Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Hefei, Anhui Province (China); Zhang, Qi [Anhui Firesky Crystal Science and Technology Co. Ltd, Tongling (China); Shi, Zibin [26th Institute of China Electronics Technology Group Corporation, Chongqing (China); Wang, Jiyang [Shandong University, State Key Laboratory of Crystal Materials, Jinan (China)

2017-01-15

A new piezoelectric single crystal La{sub 3}Ga{sub 4.85}Fe{sub 0.15}SiO{sub 14} (LGFS) was grown by the Czochralski method firstly. Its structural parameters were obtained by Rietveld refinement to the X-ray diffraction. The effective segregation coefficient k{sub eff} of Fe in the LGFS was determined to be 0.6. The cost of LGFS is reduced due to the doping of cheap Fe. The crystal density was measured to be 5.7 g cm{sup -3} by the buoyancy method. The defect structure of LGFS crystal was investigated by the chemical etching with 85% H{sub 2}SO{sub 4} etchant. Dislocation etching pit patterns of LGFS crystal are consistent with the corresponding atomic arrangement schematics. Compared with LGS, LGN, LGT, and LGAS crystal, the LGFS crystal exhibits outstanding dielectric and piezoelectric properties, and ε {sub 11}, ε {sub 33}, d{sub 11}, and d{sub 14} are 20.86, 51.99, 6.5 pC/N, and -5.10 pC/N, respectively. Therefore, LGFS may be a new potential piezoelectric crystal with high performance and low expense. (orig.)

A numerical study of the influence of feeding polycrystalline silicon granules on melt temperature in the continuous Czochralski process

Science.gov (United States)

Ono, Naoki; Kida, Michio; Arai, Yoshiaki; Sahira, Kensho

1993-09-01

Temperature change was simulated using a solid body rotating melt model when solid polycrystalline silicon granules were supplied to a melt in a double-crucible method. Only heat conduction was considered in the analysis. The influence of the crucible rotation rates and of the initial temperature of the supplied silicon was investigated systematically and quantitatively. The influence of the crucible rotation rate was stronger than expected, which suggests that the crucible rotation rate cannot be lowered too much because of the possibility of the melt solidifying between the inner and outer crucibles.

FY 1977 Annual report on Sunshine Project results. Research and development of photovoltaic power generation systems (Research and development of particle nonacceleration growth type silicon thin-film crystals); 1977 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Ryushi hikasoku seichogata silicon usumaku kessho no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1978-03-01

As part of the research and development project for producing photovoltaic power generation systems at reduced cost, the R and D efforts are made for producing particle nonacceleration growth type silicon thin-film crystals. The research items are (1) research on thin-film crystals, and (2) research on cell-structuring method. The item (1) studies quantities, types and electrical properties of impurities and crystal defects in the polycrystalline ingots, produced by the Czochralski method from metal grade silicon and purified metal grade silicon stocks. Next, the substrate prepared above is coated with a thin film of silicon by the vapor-phase growth method with dichlorosilane as the source, to evaluate the thin-film crystals by measuring the crystal defects and lifetime of small numbers of carriers. The item (2) studies the effects of the solder dipping method. In addition, unevenness of photoelectric current is analyzed by a laser scanning microscope, to investigate the effects of the secondary impurities and crystal defects in the substrate crystals on photoelectric current. As a result, it is found that conversion efficiency is improved by grading the hole concentration in the p-type activated layer. The targets of 10 to 20 m{sup 2} as the area and 7 to 8% as the conversion efficiency are attained by preparing the crystals again. (NEDO)

1.083 μm laser operation in Nd,Mg:LiTaO3 crystal

Science.gov (United States)

Hu, P. C.; Hang, Y.; Li, R.; Gong, J.; Yin, J. G.; Zhao, C. C.; He, X. M.; Yu, T.; Zhang, L. H.; Chen, W. B.; Zhu, Y. Y.

2011-10-01

Nd,Mg:LiTaO3 single crystal with high optical quality was grown by Czochralski technique. Absorption and fluorescence spectra were investigated. The peak absorption cross section at 806.5 nm and peak emission cross section at 1091 nm are 6.81×10-20 and 3.28×10-20 cm2, respectively. The fluorescence lifetime was measured to be 129 μs. With a laser-diode as the pump source, a maximum 375 mW continuous-wave laser output at 1083 nm has been obtained with a slope efficiency of 7.2% with respect to the pump power.

1.083 μm laser operation in Nd,Mg:LiTaO3 crystal

International Nuclear Information System (INIS)

Hu, P C; Hang, Y; Li, R; Gong, J; Yin, J G; Zhao, C C; He, X M; Yu, T; Zhang, L H; Chen, W B; Zhu, Y Y

2011-01-01

Nd,Mg:LiTaO 3 single crystal with high optical quality was grown by Czochralski technique. Absorption and fluorescence spectra were investigated. The peak absorption cross section at 806.5 nm and peak emission cross section at 1091 nm are 6.81×10 -20 and 3.28×10 -20 cm 2 , respectively. The fluorescence lifetime was measured to be 129 μs. With a laser-diode as the pump source, a maximum 375 mW continuous-wave laser output at 1083 nm has been obtained with a slope efficiency of 7.2% with respect to the pump power

Development of high responsivity Ge:Ga photoconductors

International Nuclear Information System (INIS)

Haegel, N.M.; Hueschen, M.R.; Haller, E.E.

1984-06-01

Czochralski-grown gallium-doped germanium (Ge:Ga) single crystal samples with a compensation of 10 -4 have been modified by the indiffusion of Cu to produce photoconductors which provide NEPs comparable to current optimum Ge:Ga detectors, but exhibit responsivities a factor of 5 to 6 times higher when tested at a background photon flux of 10 8 photons/sec at lambda=93 μm. The introduction of Cu, a triple acceptor in Ge which acts as a neutral scattering center, reduces carrier mobility and extends the breakdown field significantly in this ultra-low compensation material

Trap spectrum of the ``new oxygen donor'' in silicon

Science.gov (United States)

Hölzlein, K.; Pensl, G.; Schulz, M.

1984-07-01

Electronic properties of the new oxygen donor generated in phosphorus-doped Czochralski-silicon at 650‡C are investigated by deep level transient spectroscopy. A continuous distribution of trap states (1014 1016 cm-3 eV-1) is detected in the upper half of the band gap with increasing values towards the conduction band. The magnitude of the state density observed increases with the oxygen content, the heat duration, and a preanneal at temperatures lower than 650‡C. The continuous trap spectrum of the new donor is explained by interface states occuring at the surface of SiO x precipitates.

Concentrator-solar-cell development

Science.gov (United States)

Grenon, L.

1982-07-01

A program is described which is a continuation of earlier programs for the development of high-efficiency, low-cost, silicon concentrator solar cells. The base-line process steps and process sequences identified in these earlier contracts were evaluated and specific processes reviewed. In particular, emphasis on the use of Czochralski-grown silicon wafers rather than float-zone wafers were examined. Additionally, a study of the trade-offs between textured and nontextured cells was initiated, and the limits within which the low-cost plated nickel copper metallization can be used in concentrator solar cell applications was identified.

Growth and optical properties of Tm:GdVO4 single crystal

International Nuclear Information System (INIS)

Urata, Y.; Akagawa, K.; Wada, S.; Tashiro, H.; Fukuda, T.

1999-01-01

Thulium-doped gadolinium vanadate (Tm:GdVO 4 ) single crystal has been successfully grown by a modified Czochralski (CZ) technique. Effective distribution coefficient of Tm was determined to be 0.74. Absorption characterization was performed in the 800 nm region and the maximum absorption peak was found at 799 nm for π polarization. Fluorescence spectra for tuning at the maximum absorption were obtained around 1.8-2.0 μm region with 100 nm bandwidth. This suggests that a Tm:GdVO 4 crystal is expected as a new promising LD pumped solid-state laser in the 2 μm region. (orig.)

Application of hydrogen-plasma technology for property modification of silicon and producing the silicon-based structures

International Nuclear Information System (INIS)

Fedotov, A.K.; Mazanik, A.V.; Ul'yashin, A.G.; Dzhob, R; Farner, V.R.

2000-01-01

Effects of atomic hydrogen on the properties of Czochralski-grown single crystal silicon as well as polycrystalline shaped silicon have been investigated. It was established that the buried defect layers created by high-energy hydrogen or helium ion implantation act as a good getter centers for hydrogen atoms introduced in silicon in the process of hydrogen plasma hydrogenation. Atomic hydrogen was shown to be active as a catalyzer significantly enhancing the rate of thermal donors formation in p-type single crystal silicon. This effect can be used for n-p- and p-n-p-silicon based device structures producing [ru

Growth of high phase-match temperature LiNbO3 single crystals. Annual report for period ending March 15, 1978

International Nuclear Information System (INIS)

Kway, W.L.; Feigelson, R.S.

1978-09-01

LiNbO 3 crystal with T/sub pm/ greater than or equal to 180 0 C together with excellent phase matching characteristics and a high degree of optical homogeneity can be grown by the Czochralski technique with the following set of growth parameters: a melt composition of .54 Li 2 O/.46 Nb 2 O 5 doped with 1.0 mole % MgO; a growth rate of 2 mm/hr or less; positive axial and radial temperature gradients; and a crystal rotation rate of 50 rpm or higher to provide for a planar solid-liquid growth interface

Muonium hyperfine parameters in Si1-x Ge x alloys

International Nuclear Information System (INIS)

King, Philip; Lichti, Roger; Cottrell, Stephen; Yonenaga, Ichiro

2006-01-01

We present studies of muonium behaviour in bulk, Czochralski-grown Si 1- x Ge x alloy material, focusing in particular on the hyperfine parameter of the tetrahedral muonium species. In contrast to the bond-centred species, the hyperfine parameter of the tetrahedral-site muonium centre (Mu T ) appears to vary non-linearly with alloy composition. The temperature dependence of the Mu T hyperfine parameter observed in low-Ge alloy material is compared with that seen in pure Si, and previous models of the Mu T behaviour in Si are discussed in the light of results from Si 1- x Ge x alloys

Wide gap, permanent magnet biased magnetic bearing system

Science.gov (United States)

Boden, Karl

1992-01-01

The unique features and applications of the presented electrical permanent magnetic bearing system essentially result from three facts: (1) the only bearing rotor components are nonlaminated ferromagnetic steel collars or cylinders; (2) all radial and axial forces are transmitted via radial gaps; and (3) large radial bearing gaps can be provided with minimum electric power consumption. The large gaps allow for effective encapsulation and shielding of the rotors at elevated or low temperatures, corrosive or ultra clean atmosphere or vacuum or high pressure environment. Two significant applications are described: (1) a magnetically suspended x ray rotary anode was operated under high vacuum conditions at 100 KV anode potential, 600 C temperature at the rotor collars and speed 18000 rpm with 13 mm radial bearing gap; and (2) an improved Czochralski type crystal growth apparatus using the hot wall method for pulling GaAs single crystals of low dislocation density. Both crystal and crucible are carried and transported by magnetically suspended shafts inside a hermetically sealed housing at 800 C shaft and wall temperature. The radial magnetic bearing gap measures 24 mm.

Lanthanide gallate perovskite-type substrates for epitaxial, high-Tc superconducting Ba2YCu3O7-δ films

International Nuclear Information System (INIS)

Giess, E.A.; Sandstrom, R.L.; Gallagher, W.J.; Gupta, A.; Shinde, S.L.; Cook, R.F.; Cooper, E.L.; O'Sullivan, E.M.J.; Roldan, J.M.; Segmuller, A.D.; Angilello, J.

1990-01-01

This paper reports on the use of lanthanide gallate perovskite-type substrates for the deposition of epitaxial, high-T c superconducting Ba 2 YCu 3 O 7-δ (BYCO) films. They were also found to have moderate dielectric constants (∼25 compared to ∼ 277 for SrTiO 3 ). This study was undertaken to further explore the use of LaGaO 3 , NdGaO 3 , SrTiO 3 , MgO, and Y-stabilized ZrO 2 substrates, prepared from single-crystal joules grown by several suppliers using the Czochralski method. Films were prepared by cylindrical magnetron sputtering and laser ablation. Substrate evaluations included measurement of dielectric constant and loss, thermal expansion, and mechanical hardness and toughness. In addition to their moderate dielectric constants, they were found to have satisfactory mechanical properties, except for the twinning tendency of LaGaO 3 . Lattice mismatch strains were calculated for orthorhombic BYCO films on a number of substrates. NdGaO 3 was found to have the best lattice match with BYCO, and is now available twin-free

Effect of thermal annealing on scintillation properties of Ce:Gd{sub 2}Y{sub 1}Ga{sub 2.7}Al{sub 2.3}O{sub 12} under different atmosphere

Energy Technology Data Exchange (ETDEWEB)

Wang, Chao; Ding, Dongzhou; Wu, Yuntao; Li, Huanying; Chen, Xiaofeng; Shi, Jian; Wang, Qingqing; Ye, Le; Ren, Guohao [Chinese Academy of Sciences, Shanghai Institute of Ceramics, Shanghai (China)

2017-05-15

Cerium-doped 1% Ce:Gd{sub 2}Y{sub 1}Ga{sub 2.7}Al{sub 2.3}O{sub 12}(GYGAG) single crystal samples grown via Czochralski method were annealed under air, O{sub 2} and N{sub 2} atmospheres from 350 to 1400 C. The X-ray excited luminescence spectra, energy spectra and UV as well as thermally stimulated luminescence (TSL) spectra were performed comparatively on ''as-grown'' and thermally annealed samples. It was found that the luminescence efficiency after annealing in air and O{sub 2} was significantly enhanced compared to the non-annealed samples and this phenomenon was suggested to be caused by the existence of some oxygen vacancies in the Ce:GYGAG crystals. And the oxygen vacancies in the as-grown GYGAG crystals can be effectively eliminated by means of annealing in O{sub 2} containing atmosphere without changing the luminescence mechanism. From the TSL curves before and after annealing, three traps within 77-650 K were found to be related to oxygen vacancies. (orig.)

Characterization of mixed Nd :LuxGd1-xVO4 laser crystals

Science.gov (United States)

Yu, H. H.; Zhang, H. J.; Wang, Z. P.; Wang, J. Y.; Yu, Y. G.; Cheng, X. F.; Shao, Z. S.; Jiang, M. H.; Ling, Z. C.; Xia, H. R.

2007-06-01

A series of laser crystals Nd :LuxGd1-xVO4 (x=0.14,0.32,0.50,0.61,0.70,0.80) was grown by the Czochralski method. The thermal properties, including the average linear thermal expansion coefficients, thermal diffusion coefficients, specific heats, and thermal conductivities, of the mixed crystals were obtained. The material constants Ms for the thermal stress resistance figure were calculated and showed that the thermal fracture limits of the mixed crystals should be comparable with that of Nd :YVO4. The polarization absorption spectra from 240to1000nm were measured at room temperature and the absorption cross sections at 809nm were calculated. Using the Judd-Ofelt theory, the theoretical radiative lifetimes were calculated and compared with the experimental results. Continuous wave laser performances were achieved with the mixed crystals at the wavelength of 1.06μm when they were pumped by a laser diode. Thermal, optical, and laser properties have shown variation as a function of x and proved that the mixed crystals are good laser materials.

Growth and characterization of Nd-doped disordered Ca3Gd2(BO3)4 crystal

Science.gov (United States)

Pan, Z. B.; Zhang, H. J.; Yu, H. H.; Xu, M.; Zhang, Y. Y.; Sun, S. Q.; Wang, J. Y.; Wang, Q.; Wei, Z. Y.; Zhang, Z. G.

2012-01-01

A high-quality disordered Nd3+:Ca3Gd2(BO3)4 (Nd3+:CGB) laser crystal was grown by the Czochralski method. The space group and effective segregation coefficient of Nd3+ were determined to be Pnma and 1.06, respectively. The thermal properties, including the average linear thermal expansion coefficient, thermal diffusivity, specific heat, and thermal conductivity were systematically measured for the first time. It was found that the thermal conductivity increases with increasing temperature, indicating glasslike behavior. The polarized spectral properties of the crystal were investigated, including the polarized absorption spectra, polarized fluorescence spectra, and fluorescence decay. The spectroscopic parameters of Nd3+ ions in Nd3+:CGB crystal have been obtained based on Judd-Ofelt theory. The anisotropy of the spectral properties for different polarized directions was discussed. Additionally, the continuous-wave (CW) laser performance at 1.06 μm was demonstrated for the first time. The maximum output power of 603 mW was achieved with corresponding optical conversion efficiency of 8.33% and slope efficiency of 9.95%.

High output power of differently cut Nd:MgO:LiTaO3 CW lasers

Science.gov (United States)

Sun, D. H.; Liu, S. D.; Wang, D. Z.; Sang, Y. H.; Kang, X. L.; Liu, H.; Bi, Y.; Yan, B. X.; He, J. L.; Wang, J. Y.

2013-04-01

A high-quality Nd3+ and Mg2+ co-doped LiTaO3 (Nd:MgO:LT) crystal was grown by the Czochralski method. The polarized absorption spectra and fluorescence spectra were studied, and the absorption cross section was calculated by Judd-Ofelt (J-O) theory. The laser performance with different sample cuts of the crystal was investigated for the first time, and it was found that Nd:MgO:LT crystal with different cutting directions (a and c) exhibits different laser properties. By optimizing a partial reflectivity mirror in the laser experimental setting, a high continuous wave output power of 3.58 W was obtained at 1092 and 1076 nm with an optical-to-optical conversion efficiency of 22.78% and slope efficiency of 26.06%. The results indicate that Nd:MgO:LT crystal is a promising candidate for the manufacture of Nd3+ doped periodically poled MgO:LiTaO3 crystal (Nd:PPMgOLT), which should have considerable applications in self-frequency doubling and optical parametric oscillation laser devices.

High output power of differently cut Nd:MgO:LiTaO3 CW lasers

International Nuclear Information System (INIS)

Sun, D H; Liu, S D; Wang, D Z; Sang, Y H; Kang, X L; Liu, H; He, J L; Wang, J Y; Bi, Y; Yan, B X

2013-01-01

A high-quality Nd 3+ and Mg 2+ co-doped LiTaO 3 (Nd:MgO:LT) crystal was grown by the Czochralski method. The polarized absorption spectra and fluorescence spectra were studied, and the absorption cross section was calculated by Judd–Ofelt (J–O) theory. The laser performance with different sample cuts of the crystal was investigated for the first time, and it was found that Nd:MgO:LT crystal with different cutting directions (a and c) exhibits different laser properties. By optimizing a partial reflectivity mirror in the laser experimental setting, a high continuous wave output power of 3.58 W was obtained at 1092 and 1076 nm with an optical-to-optical conversion efficiency of 22.78% and slope efficiency of 26.06%. The results indicate that Nd:MgO:LT crystal is a promising candidate for the manufacture of Nd 3+ doped periodically poled MgO:LiTaO 3 crystal (Nd:PPMgOLT), which should have considerable applications in self-frequency doubling and optical parametric oscillation laser devices. (paper)

Structural analysis of as-deposited and annealed low-temperature gallium arsenide

Science.gov (United States)

Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

1993-04-01

The structure of GaAs grown at low substrate temperatures (LT-GaAs) by molecular beam epitaxy has been studied using high resolution X-ray diffraction methods. Double crystal rocking curves from the as-deposited LT-GaAs show well defined interference fringes, indicating a high level of structural perfection. Triple crystal diffraction analysis of the as-deposited sample showed significantly less diffuse scattering near the LT-GaAs 004 reciprocal lattice point compared with the substrate 004 reciprocal lattice point, suggesting that despite the incorporation of approximately 1% excess arsenic, the epitaxial layer had superior crystalline perfection than did the GaAs substrate. Triple crystal scans of annealed LT-GaAs showed an increase in the integrated diffuse intensity by approximately a factor of three as the anneal temperature was increased from 700 to 900°C. Analogous to the effects of SiO2 precipitates in annealed Czochralski silicon, the diffuse intensity is attributed to distortions in the epitaxial LT-GaAs lattice by arsenic precipitates.

Crystal growth and scintillation properties of multi-component oxide single crystals: Ce:GGAG and Ce:La-GPS

Energy Technology Data Exchange (ETDEWEB)

Yoshikawa, A., E-mail: yoshikawa@imr.tohoku.ac.jp [Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579 (Japan); C& A Corporation, 6-6-40 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579 (Japan); Kamada, K. [New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579 (Japan); C& A Corporation, 6-6-40 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579 (Japan); Kurosawa, S. [Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579 (Japan); Shoji, Y. [Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577 (Japan); C& A Corporation, 6-6-40 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579 (Japan); Yokota, Y. [New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579 (Japan); Chani, V.I. [Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577 (Japan); Nikl, M. [Institute of Physics, AS CR, Cukrovarnická 10, 162 53 Prague (Czech Republic)

2016-01-15

Crystal growth by micro-pulling-down, Czochralski, and floating zone methods and scintillation properties of Ce:Gd{sub 3}(Ga,Al){sub 5}O{sub 12} (Ce:GGAG) multi-component oxide garnets, and Ce:Gd{sub 2}Si{sub 2}O{sub 7} (Ce:GPS) or Ce:(La,Gd){sub 2}Si{sub 2}O{sub 7} (Ce:La-GPS) pyro-silicates are reviewed. GGAG crystals demonstrated practically linear dependences of some of the parameters including lattice constant, emission wavelength, and band gap on Ga content. However, emission intensity, light yield and energy resolution showed maxima for intermediate compositions. GGAG crystals had the highest light yield of 56,000 photon/MeV for Ga content of 2.7 atoms per garnet formula unit. Similarly the light yield and energy resolution of La-GPS showed the highest values of 40,000 photon/MeV and 4.4%@662 keV, respectively, for La-GPS containing 10% of La. Moreover, La-GPS demonstrated stable scintillation performance up to 200 °C.

Dynamical theoretical model of the high-resolution double-crystal x-ray diffractometry of imperfect single crystals with microdefects

International Nuclear Information System (INIS)

Molodkin, V. B.; Olikhovskii, S. I.; Kislovskii, E. N.; Vladimirova, T. P.; Skakunova, E. S.; Seredenko, R. F.; Sheludchenko, B. V.

2008-01-01

The dynamical diffraction model has been developed for the quantitative description of rocking curves (RCs) measured in the Bragg diffraction geometry from single crystals containing homogeneously distributed microdefects of several types and with arbitrary sizes. The analytical expressions for coherent and diffuse RC components, which take self-consistently multiple-scattering effects into account and depend explicitly on microdefect characteristics (radius, concentration, strength, etc.), have been derived with taking into account the instrumental factors. The developed model has been applied to determine the characteristics of oxygen precipitates and dislocation loops in silicon crystals grown by Czochralsky and float-zone methods using RCs measured by the high-resolution double-crystal x-ray diffractometer. It has been shown, particularly, that completely dynamical consideration of Huang as well as Stockes-Wilson diffuse scattering (DS) in both diffuse RC component and coefficient of extinction of coherent RC component due to DS, together with taking asymmetry and thermal DS effects into account, provides the possibility to distinguish contributions into RC from defects of different types, which have equal or commensurable effective radii

Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection

International Nuclear Information System (INIS)

Verbitskaya, E.; Eremin, V.; Ivanov, A.; Strokan, N.; Vasilev, V.; Markov, A.; Polyakov, A.; Gavrin, V.; Kozlova, Yu.; Veretenkin, E.; Bowles, T.J.

2000-01-01

The results on electrical characteristics and charge collection efficiency in the detectors from bulk SI GaAs developed as a material for solar neutrino spectroscopy are presented. SI GaAs crystals were grown by the Czochralski method. The changes in the stoichiometric components are permanently controlled. It is shown that the performance of GaAs p + -i-n + structures provided the range of operational reverse voltage up to 1 kV. Measurement of deep level spectra and their analysis reveal the dominant deep levels - hole traps E v +0.51 and +0.075 eV in GaAs grown from stoichiometric and nonstoichiometric melts, respectively. Investigation of carrier transport properties and bulk homogeneity evinced in charge collection efficiency has shown advantageous results for SI GaAs grown from stoichiometric melt. The reduction of carrier transport parameters and charge collection efficiency in GaAs grown from nonstoichiometric melt is analyzed taking into consideration formation of the hole trap E v +0.075 eV, presumably assigned to Ga antisite and its influence on the concentration of the ionized deep donor level EL2 +

Growth, Faraday and inverse Faraday characteristics of Tb2Ti2O7 crystal.

Science.gov (United States)

Guo, Feiyun; Sun, Yilin; Yang, Xiongsheng; Chen, Xin; Zhao, Bin; Zhuang, Naifeng; Chen, Jianzhong

2016-03-21

Tb2Ti2O7 (TTO) single crystal with dimensions of 20 × 20 × 16 mm3 was grown by the Czochralski method. Rietveld structure refinement of X-ray diffraction (XRD) data confirms that the compound crystallizes in the cubic system with pyrochlore structure. Transmission spectra, Magnetic circular dichroism (MCD) spectra, Faraday and inverse Faraday characteristics of TTO crystal have been measured and analyzed in detail. The results demonstrate that TTO crystal has high transmittance at 700-1400 nm waveband and a larger Verdat constant than that of TGG reported. Magnetic circular dichroism (MCD) spectra showed that the 4f→4f transitions of Tb3+ have significant contributions to the magneto-optical activity (MOA). In the time-resolved pump-probe spectroscopy, the rotation signals of the probe beam based on the inverse Faraday effect in magneto-optical crystal were observed at zero time delay, the full width at half maximum of the rotation and ellipticity signals can be as fast as ~500 fs, which indicates that TTO crystal can be a promising material for ultrafast all-optical magnetic switching.

Comparative study of optical and scintillation properties of YVO{sub 4}, (Lu{sub 0.5}Y{sub 0.5})VO{sub 4}, and LuVO{sub 4} single crystals

Energy Technology Data Exchange (ETDEWEB)

Fujimoto, Yutaka, E-mail: fuji-you@tagen.tohoku.ac.j [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yanagida, Takayuki; Yokota, Yuui; Chani, Valery [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Kochurikhin, Vladimir V. [General Physics Institute, 38 Vavilov Street, 119991, Federation, Moscow (Russian Federation); Yoshikawa, Akira [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); NICHe, Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

2011-04-11

Optical and scintillation properties of YVO{sub 4}, (Lu{sub 0.5}Y{sub 0.5})VO{sub 4}, and LuVO{sub 4} single crystals grown by the Czochralski (CZ) method with RF heating system are compared. All vanadate crystals show high transmittance ({approx}80%) in the 400-900 nm wavelength range. In both photo- and radio-luminescence spectra, intense peak around 400-500 nm, which was ascribed to the transition from triplet state of VO{sub 4}{sup 3-}, was clearly observed. The main decay time component was about 38 {mu}s (YVO{sub 4}), 18 {mu}s ((Lu{sub 0.5}Y{sub 0.5})VO{sub 4}), and 17 {mu}s (LuVO{sub 4}) under 340 nm excitation. The scintillation light yields of YVO{sub 4}, (Lu{sub 0.5}Y{sub 0.5})VO{sub 4}, and LuVO{sub 4} crystals (obtained from the {sup 137}Cs excited pulse height spectra) were evaluated to be about 11,200, 10,700, and 10,300 ph/MeV, respectively.

The spectroscopy investigation of ZnWO{sub 4}:Tm{sup 3+} single crystal

Energy Technology Data Exchange (ETDEWEB)

Yang Fugui, E-mail: ruopiao@fjirsm.ac.cn [Department of Electronic Information Science, Fujian Jiangxia University, Fuzhou, Fujian 350108 (China); Tu Chaoyang [Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China)

2012-09-15

Highlights: Black-Right-Pointing-Pointer The spectroscopy and refractive index of single crystal ZnWO{sub 4}:Tm{sup 3+} are investigated systematically. Black-Right-Pointing-Pointer The Judd-Ofelt parameters are obtained. Black-Right-Pointing-Pointer The gain cross sections at {approx}2 {mu}m are estimated by reciprocity method (RM). Black-Right-Pointing-Pointer The laser operation at {approx}2 {mu}m is discussed. - Abstract: The single crystal ZnWO{sub 4}:Tm{sup 3+} has been grown by Czochralski method. The XRD, refractive index, absorption and fluorescence spectra are measured. The Judd-Ofelt parameters{Omega}{sub 2}, {Omega}{sub 4}, {Omega}{sub 6} are obtained to be 6.3 Multiplication-Sign 10{sup -20}, 1.3 Multiplication-Sign 10{sup -20}, 1.4 Multiplication-Sign 10{sup -20} cm{sup 2}, respectively. The fluorescence decay time of the {sup 3}H{sub 4} level is measured to be 0.113 ms and the quantum efficiency is 57%. The gain cross sections corresponding to {sup 3}F{sub 4}{yields}{sup 3}H{sub 6} transition at {approx}2 {mu}m are estimated by the reciprocity method (RM). The strong gain at {approx}2 {mu}m indicates that the ZnWO{sub 4}:Tm{sup 3+} crystal is a promising laser host for {approx}2 {mu}m laser.

Achievement report for fiscal 1981 Sunshine Program on development of practical application technologies for photovoltaic power systems. Test production and verification of solar panels (Development of polycrystalline substrate process technologies); 1981 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyo denchi panel jikken seisaku kensho (takessho kiban kotei no gijutsu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1982-03-01

Studies are conducted to enlarge the diameter of polycrystalline Si castings and to develop a low-loss slicing method using silicon nitride powder as mold releasing agent. The apparatus for Czochralski's pulling process is improved and tested using SEG (selective epitaxial growth) Si, and now the casting of a 150mm-diameter ingot is feasible. Also, test production of a 94mm-square wafer as specified by NEDO (New Energy and Industrial Technology Development Organization) is successfully carried out. Difficulties in separating the mold releasing agent from the crucible are solved by changing the Si{sub 3}N{sub 4} power solution from PVA (polyvinyl alcohol) to ethyl silicate. The design, manufacture, and installation of the important parts of the system for the mass production of castings are now complete. The crucible is designed to be movable relative to the heater section, and the molten Si is allowed to cool and solidify from the bottom upward. In relation with the development of low-cost wafer manufacturing technologies, low-loss slicing methods are studied. It is concluded that under the current circumstances a multi-blade saw is more promising than the multi-wire saw in view of the damaged slice rate, processing speed, operating cost, and maintainability. (NEDO)

Effects of neodymium concentration on optical characteristics of polycrystalline Nd:YAG laser materials

International Nuclear Information System (INIS)

Ikesue, A.; Kamata, K.; Yoshida, K.

1996-01-01

A neodymium-doped yttrium-aluminum garnet (Y 3 Al 5 O 12 , YAG) (Nd:YAG) ceramic that contained 0.3--4.8 at.% neodymium additives and exhibited nearly the same optical properties as those of a single crystal was fabricated by a solid-state reaction method using high-purity powders. Although the integrated absorption intensity of the 2 H 9/2 + 4 F 5/2 bands simply increased as the neodymium concentration in the YAG ceramics decreased, the fluorescence intensity of the 2.4 at.% Nd:YAG ceramic was the strongest among Nd:YAG ceramics with various neodymium concentrations and a 0.9 at.% Nd:YAG single crystal. An oscillation experiment was performed on a continuous-wave (cw) laser with a diode-laser exciting system using those ceramics and the single crystal. The oscillation threshold and slope efficiency in that analysis were 309 mW and 28%, respectively, for the 1.1 at.% Nd:YAG ceramics and 356 mW and 40%, respectively, for the 2.4 at.% Nd:YAG ceramics. The lasing characteristics of the ceramics in the present work were superior to those of a 0.9 at.% Nd:YAG single crystal that was fabricated by the Czochralski (Cz) method

Growth and characterization of Nd:Bi12SiO20 single crystal

Science.gov (United States)

Xu, Honghao; Zhang, Yuanyuan; Zhang, Huaijin; Yu, Haohai; Pan, Zhongben; Wang, Yicheng; Sun, Shangqian; Wang, Jiyang; Boughton, R. I.

2012-09-01

A Nd:Bi12SiO20 crystal was grown by the Czochralski method. The thermal properties of the crystal were systematically studied. The thermal expansion coefficient was measured to be α=11.42×10-6 K-1 over the temperature range of 295-775 K, and the specific heat and thermal diffusion coefficient were measured to be 0.243 Jg-1 k-1 and 0.584 mm2/s, respectively at 302 K. The density was measured to be 9.361 g/cm3 by the buoyancy method. The thermal conductivity of Nd:Bi12SiO20 was calculated to be 1.328 Wm-1 K-1 at room temperature (302 K). The refractive index of Nd:Bi12SiO20 was measured at room temperature at eight different wavelengths. The absorption and emission spectra were also measured at room temperature. Continuous-wave (CW) laser output of a Nd:Bi12SiO20 crystal pumped by a laser diode (LD) at 1071.5 nm was achieved with an output power of 65 mW. To our knowledge, this is the first time LD pumped laser output in this crystal has been obtained. These results show that Nd:Bi12SiO20 can serve as a laser crystal.

Scintillation properties of Ce-doped LuLiF{sub 4} and LuScBO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Yanagida, Takayuki, E-mail: t_yanagi@tagen.tohoku.ac.jp [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Fujimoto, Yutaka [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Kawaguchi, Noriaki [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Tokuyama Corporation, Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 (Japan); Yokota, Yuui [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Kamada, Kei [Materials Research Laboratory, Furukawa, Co. Ltd., 1-25-13 Kannondai, Tsukuba, Ibaragi 305-0856 (Japan); Totsuka, Daisuke [Nihon Kessho Kogaku Co., Ltd., 810-5 Nobe-cho, Tatebayashi, Gunma 374-0047 (Japan); Hatamoto, Shun-Ichi [Corporate Research and Development Center, Mitsui Mining and Smelting Co., Ltd., 1333-2 Haraichi, Ageo Saitama 362-0023 (Japan); Yoshikawa, Akira; Chani, Valery [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)

2011-10-01

The crystals of 1 mol% Ce-doped LuLiF{sub 4} (Ce:LLF) grown by the micro-pulling down ({mu}-PD) method and 1 mol% Ce-doped LuScBO{sub 3} (Ce:LSBO) grown by the conventional Czochralski (Cz) method were examined for their scintillation properties. Ce:LLF and Ce:LSBO demonstrated {approx}80% transparency at wavelengths longer than 300 and 400 nm, respectively. When excited by {sup 241}Am {alpha}-ray to obtain radioactive luminescence spectra, Ce{sup 3+} 5d-4f emission peaks were detected at around 320 nm for Ce:LLF and at around 380 nm for Ce:LSBO. In Ce:LSBO, the host luminescence was also observed at 260 nm. By recording pulse height spectra under {gamma}-ray irradiation, the absolute light yield of Ce:LLF and Ce:LSBO was measured to be 3600{+-}400 and 4200{+-}400 ph/MeV, respectively. Decay time kinetics was also investigated using a pulse X-ray equipped streak camera system. The main component of Ce:LLF was {approx}320 ns and that of Ce:LSBO was {approx}31 ns. In addition, the light yield non-proportionality and energy resolution against the {gamma}-ray energy were evaluated.

Comparative TEM study of bonded silicon/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding

International Nuclear Information System (INIS)

Reznicek, A.; Scholz, R.; Senz, S.; Goesele, U.

2003-01-01

Wafers of Czochralski-grown silicon were bonded hydrophilically, hydrophobically and in ultrahigh vacuum (UHV) at room temperature. Wafers bonded hydrophilically adhere together by hydrogen bonds, those bonded hydrophobically by van der Waals forces and UHV-bonded ones by covalent bonds. Annealing the pre-bonded hydrophilic and hydrophobic wafer pairs in argon for 2 h at different temperatures increases the initially low bonding energy. UHV-bonded wafer pairs were also annealed to compare the results. Transmission electron microscopy (TEM) investigations show nano-voids at the interface. The void density depends on the initial bonding strength. During annealing the shape, coverage and density of the voids change significantly

Precision interplanar spacings measurements of boron doped silicon

International Nuclear Information System (INIS)

Soares, D.A.W.; Pimentel, C.A.F.

1982-05-01

A study of lattice parameters of boron doped silicon (10 14 -10 19 atom/cc) grown in and directions by Czochralski technique has been undertaken. Interplanar spacings (d) were measured by pseudo-Kossel technique to a precision up to 0,001%; different procedures to obtain d and the errors are discussed. It is concluded that the crystallographic planes contract preferentially and the usual study of parameter variation must be made as a function of d. The diffused B particularly contracts the [333] plane and in a more pronunciate way in high concentrations. An orientation dependence of the diffusion during growth was observed. (Author) [pt

Optical properties of Ho3+-doped NaGd(WO4)2 crystal for laser materials

International Nuclear Information System (INIS)

Wang, Hongyan; Li, Jianfu; Jia, Guohua; You, Zhenyu; Yang, Fugui; Wei, Yanping; Wang, Yan; Zhu, Zhaojie; Lu, Xiuai; Tu, Chaoyang

2007-01-01

Holmium doped sodium gadolinium tungstate crystals with sizes of about O20 mm x 40 mm were grown successfully by the Czochralski technique along the (0 0 1) orientation. Polarized absorption spectra, fluorescence spectra and fluorescence decay curve of Ho 3+ -doped NaGd(WO 4 ) 2 have been recorded at room temperature. Based on the Judd-Ofelt theory, three intensity parameters were obtained. The spectroscopic parameters of this crystal such as the oscillator strengths, radiative transition probabilities, radiative lifetimes as well as the branching ratios were calculated. The fluorescence lifetime τ f of the 5 S 2 level was measured to be 5 μs

Decade of PV Industry R and D Advances in Silicon Module Manufacturing

Energy Technology Data Exchange (ETDEWEB)

Symko-Davis, M.; Mitchell, R.L.; Witt, C.E.; Thomas, H.P. [National Renewable Energy Laboratory; King, R.[U.S. Department of Energy; Ruby, D.S. [Sandia National Laboratories

2001-01-18

The US Photovoltaic (PV) industry has made significant technical advances in crystalline silicon (Si) module manufacturing through the PV Manufacturing R and D Project during the past decade. Funded Si technologies in this project have been Czochralski, cast polycrystalline, edge-defined film-fed growth (EFG) ribbon, string ribbon, and Si-film. Specific R and D Si module-manufacturing categories that have shown technical growth and will be discussed are in crystal growth and processing, wafering, cell fabrication, and module manufacturing. These R and D advancements since 1992 have contributed to a 30% decrease in PV manufacturing costs and stimulated a sevenfold increase in PV production capacity.

Quasi-continuously pumped operation of 2.4% doped crystalline Nd:YAG in a bounce geometry

Science.gov (United States)

Kubeček, Václav; Jelínek, Michal; Čech, Miroslav; Hiršl, Petr

2009-02-01

We report on efficient operation of highly doped 2.4 at. % crystalline Czochralski grown Nd:YAG at 1.06μm, 1.3μm and 1.4μm in a diode pumped bounce amplifier configuration under quasi-continuous pumping. At wavelength of 1064nm the linearly polarized pulses with energy of 16.8 mJ in free running regime with repetition rate of 10 Hz (optical to optical efficiency of 44.6 % and slope efficiency of 50%) and 1 mJ in passively Q-switched regime with pulse duration of 6.4 ns were generated.The passively Q switched operation at 1.3μm was also demonstrated.

Spectral properties and laser performance of Tm, Ho: LuLF4 crystal

Science.gov (United States)

Peng, Haiyan; Zhang, Kun; Zhang, Lianhan; Hang, Yin; Xu, Jianqiu; Tang, Yulong; Cheng, Yan; Xiong, Jing

2008-12-01

LuLiF4 single crystals co-doped with thulium (5%) and holmium (0.5%), which had large size, intact shape and high optical quality, were successfully grown by the medium frequency induction heating Czochralski Technique. The absorption spectrum of the crystals showed that the main absorption peak located at 686 nm and 792nm. At room temperature, LuLiF4 single crystals co-doped with thulium (5%) and holmium (0.5%) were end-pumped by a fiber-coupled laser diode system with pumping wavelength of 795 nm. We achieved power of 50 mw continuous laser output at 2.05 μm wavelength.

Precursor defect to the vacancy-dioxygen center in Si

Science.gov (United States)

Londos, C. A.; Sarlis, N.; Fytros, L. G.; Papastergiou, K.

1996-03-01

In a recent paper [Phys. Rev. B 50, 11 531 (1994)] we have tentatively attributed two new infrared bands at 914 cm -1 and 1000 cm-1, in neutron-irradiated Czochralski-grown silicon, to a [VO+Oi] structure that was considered to develop as an intermediate stage in the process of conversion of a VO center to a VO2 complex upon heat treatment. As a continuation of this work, we further investigate [VO+Oi] structure and the formation of intermediate defects. In addition, we present semiempirical calculations of the localized vibrational mode frequencies of the [VO+Oi] defect. The results are consistent with the experimental observations.

Growth and optical properties of Tm:GdVO{sub 4} single crystal

Energy Technology Data Exchange (ETDEWEB)

Urata, Y.; Akagawa, K.; Wada, S.; Tashiro, H. [Photodynamics Research Center, Sendai (Japan). Inst. of Physical and Chemical Research; Suh, S.J.; Yoon, D.H. [Photodynamics Research Center, Sendai (Japan). Inst. of Physical and Chemical Research]|[Dept. of Metallurgical Engineering, Sung Kyun Kwan Univ. (Korea, Republic of); Fukuda, T. [Photodynamics Research Center, Sendai (Japan). Inst. of Physical and Chemical Research]|[Inst. for Materials Research, Tohoku Univ. (Japan)

1999-04-01

Thulium-doped gadolinium vanadate (Tm:GdVO{sub 4}) single crystal has been successfully grown by a modified Czochralski (CZ) technique. Effective distribution coefficient of Tm was determined to be 0.74. Absorption characterization was performed in the 800 nm region and the maximum absorption peak was found at 799 nm for {pi} polarization. Fluorescence spectra for tuning at the maximum absorption were obtained around 1.8-2.0 {mu}m region with 100 nm bandwidth. This suggests that a Tm:GdVO{sub 4} crystal is expected as a new promising LD pumped solid-state laser in the 2 {mu}m region. (orig.) 9 refs.

Radiation damage in silicon detectors

CERN Document Server

Lindström, G

2003-01-01

Radiation damage effects in silicon detectors under severe hadron and gamma-irradiation are surveyed, focusing on bulk effects. Both macroscopic detector properties (reverse current, depletion voltage and charge collection) as also the underlying microscopic defect generation are covered. Basic results are taken from the work done in the CERN-RD48 (ROSE) collaboration updated by results of recent work. Preliminary studies on the use of dimerized float zone and Czochralski silicon as detector material show possible benefits. An essential progress in the understanding of the radiation-induced detector deterioration had recently been achieved in gamma irradiation, directly correlating defect analysis data with the macroscopic detector performance.

ENDOR investigations on heat treatment centers in oxygen rich Si

International Nuclear Information System (INIS)

Michel, J.; Meilwes, N.; Spaeth, J.M.

1989-01-01

Previous ENDOR results on NL8 centers (thermal donors TD) in Czochralski (Cz) Si and 17 O diffused float zone (FZ) Si are summarised. Comparison of ENDOR spectra of NL8 centers in B and Al doped Si shows that no dopant impurity is involved in the TD + structure while Al is incorporated in the NL10 defects in Al-doped Si. No 10,11 B - ENDOR is found for NL10 in B doped Si. It is concluded that NL10 is not related to NL8 and that NL10 is not even a unique defect. (author) 6 refs., 4 figs., 1 tab

Tuning of Hidden Order and Superconductivity in URu2Si2 by Applied Pressure and Re Substitution

International Nuclear Information System (INIS)

Nicholas P. Butch; Jason R. Jeffries; Benjamin T. Yukich; M. Brian Maple

2006-01-01

Single crystals of URu2-xRexSi2 have been grown via the Czochralski technique. Detailed electrical transport studies under pressure on single crystals of URu2Si2 confirm that the zero- temperature critical field is suppressed smoothly towards an extrapolated critical pressure of 15 kbar, which also corresponds to the accepted critical pressure of the hidden order phase. Improving on previous work on polycrystalline samples, studies of single crystals of URu2-xRexSi2 have provided more precise tracking of the suppression of both the hidden order phase at low doping and the ferromagnetic phase at intermediate Re concentrations

Multiphysical simulation analysis of the dislocation structure in germanium single crystals

Science.gov (United States)

Podkopaev, O. I.; Artemyev, V. V.; Smirnov, A. D.; Mamedov, V. M.; Sid'ko, A. P.; Kalaev, V. V.; Kravtsova, E. D.; Shimanskii, A. F.

2016-09-01

To grow high-quality germanium crystals is one of the most important problems of growth industry. The dislocation density is an important parameter of the quality of single crystals. The dislocation densities in germanium crystals 100 mm in diameter, which have various shapes of the side surface and are grown by the Czochralski technique, are experimentally measured. The crystal growth is numerically simulated using heat-transfer and hydrodynamics models and the Alexander-Haasen dislocation model in terms of the CGSim software package. A comparison of the experimental and calculated dislocation densities shows that the dislocation model can be applied to study lattice defects in germanium crystals and to improve their quality.

Impact of the silicon substrate resistivity and growth condition on the deep levels in Ni-Au/AlN/Si MIS Capacitors

Science.gov (United States)

Wang, Chong; Simoen, Eddy; Zhao, Ming; Li, Wei

2017-10-01

Deep levels formed under different growth conditions of a 200 nm AlN buffer layer on B-doped Czochralski Si(111) substrates with different resistivity were investigated by deep-level transient spectroscopy (DLTS) on metal-insulator-semiconductor capacitors. Growth-temperature-dependent Al diffusion in the Si substrate was derived from the free carrier density obtained by capacitance-voltage measurement on samples grown on p- substrates. The DLTS spectra revealed a high concentration of point and extended defects in the p- and p+ silicon substrates, respectively. This indicated a difference in the electrically active defects in the silicon substrate close to the AlN/Si interface, depending on the B doping concentration.

Thermoluminescence characteristics of Li2B4O7 single crystal dosimeters doped with Mn

International Nuclear Information System (INIS)

Ekdal, E.; Karalı, T.; Kelemen, A.; Ignatovych, M.; Holovey, V.; Harmansah, C.

2014-01-01

In this study, thermoluminescence (TL) characterization of newly developed Li 2 B 4 O 7 :Mn single crystal phosphor is reported. It is a very attractive material in personal dosimetry because of its near tissue equivalency (Z eff =7.25). The crystal was grown by the Czochralski method from high purity compounds. Glow curve, dose response, and fading and reproducibility properties of this material were investigated. Its TL glow curve showed two well separated peaks at about 105 and 220 °C with a heating rate of 2 °C s −1 . The main peak at 220 °C has a linear dose response of up to 60 Gy. The thermal fading ratio of the material is about 8% for the main peak in 10 days. The results showed that there is no significant variation of TL responses for 15 sequential measurements. Apart from the dosimetric properties above, the TL kinetic parameters of the main peak at 220 °C of Li 2 B 4 O 7 :Mn single crystal phosphor were also calculated using the various heating rates method. Activation energy and frequency factor were found as 1.21 eV and 3.75×10 11 s −1 , respectively. - Highlights: • Li 2 B 4 O 7 :Mn single crystal was investigated in terms of TL characteristics. • The material shows highly satisfactory dosimetric properties. • Various heating rates method was used for determining the kinetic parameter

Thermal system design and modeling of meniscus controlled silicon growth process for solar applications

Science.gov (United States)

Wang, Chenlei

The direct conversion of solar radiation to electricity by photovoltaics has a number of significant advantages as an electricity generator. That is, solar photovoltaic conversion systems tap an inexhaustible resource which is free of charge and available anywhere in the world. Roofing tile photovoltaic generation, for example, saves excess thermal heat and preserves the local heat balance. This means that a considerable reduction of thermal pollution in densely populated city areas can be attained. A semiconductor can only convert photons with the energy of the band gap with good efficiency. It is known that silicon is not at the maximum efficiency but relatively close to it. There are several main parts for the photovoltaic materials, which include, single- and poly-crystalline silicon, ribbon silicon, crystalline thin-film silicon, amorphous silicon, copper indium diselenide and related compounds, cadmium telluride, et al. In this dissertation, we focus on melt growth of the single- and poly-crystalline silicon manufactured by Czochralski (Cz) crystal growth process, and ribbon silicon produced by the edge-defined film-fed growth (EFG) process. These two methods are the most commonly used techniques for growing photovoltaic semiconductors. For each crystal growth process, we introduce the growth mechanism, growth system design, general application, and progress in the numerical simulation. Simulation results are shown for both Czochralski and EFG systems including temperature distribution of the growth system, velocity field inside the silicon melt and electromagnetic field for the EFG growth system. Magnetic field is applied on Cz system to reduce the melt convection inside crucible and this has been simulated in our numerical model. Parametric studies are performed through numerical and analytical models to investigate the relationship between heater power levels and solidification interface movement and shape. An inverse problem control scheme is developed to

Research in garnet crystal (GSGG) development. Final report, 1 May 1984-31 December 1984

International Nuclear Information System (INIS)

Belt, R.F.; Uhrin, R.; Vemuri, K.

1985-01-01

This program describes the crystal growth of neodymium and chromium doped simultaneously into the host crystal of gadolinium scandium gallium garnet (Nd 3+ , Cr 3 +:Gd 3 (Sc,Ga) 2 Ga 3 O 12 or Nd,Cr:GSGG). Ten experimental boules were grown by the Czochralski method at a diameter of 1.0-1.2 inch. Special attention was given to congruently melting compositions, the Nd and Cr content, growth rate, atmosphere of growth, control of the solid liquid interface, and boule orientation. For each of our crystals a (0.25 x 3.00) inch cylindrical laser rod was extracted, fabricated, tested passively, and delivered to the Lawrence Livermore National Laboratory for active testing. At the same time, boule samples were examined for optical absorption, loss at 1.06μm, refractive index birefringence, and other physical properties. Results have demonstrated that optical quality can approach that of Nd:YAG in rod form. The increased efficiency of Nd,Cr:GSGG was confirmed to be about 2 times that of Nd:YAG. We also show that 2 inch diameter crystal boules can be grown successfully. It appears that larger boules are feasible for slab laser experiments

Production of CaWO{sub 4} crystals for direct dark matter search with CRESST

Energy Technology Data Exchange (ETDEWEB)

Muenster, Andrea [Physik-Department and Excellence Cluster Universe, Technische Universitaet Muenchen, D-85748 Garching (Germany); Collaboration: CRESST-Collaboration

2016-07-01

The direct dark matter search experiment CRESST (Cryogenic Rare Event Search with Superconducting Thermometers) uses scintillating CaWO{sub 4} single crystals as targets for possible recoils of dark matter particles. Since several years these CaWO{sub 4} crystals are produced directly at the Technische Universitaet Muenchen (TUM) including the CaWO{sub 4} powder production from the raw materials CaCO{sub 3} and WO{sub 3}, the CaWO{sub 4} crystal growth via the Czochralski method as well as the after-growth treatment of the crystals. In the recently finished CRESST-II Phase 2 (2013-2015), 4 TUM-grown crystals were installed in the main cryostat for the first time. Showing one of the best radiopurities of all installed crystals combined with an excellent detector performance the analysis of the crystal TUM40 resulted in the best sensitivity for low-mass dark matter particles in 2014. For the upcoming CRESST-III phase 2 we aim for a further improvement in radiopurity by a factor of 100. First results of a chemical purification of the raw materials as well as future plans to reduce the intrinsic background via recrystallization are presented.

Development of longer Nd:LGGG crystal for high power laser application

Science.gov (United States)

Yin, Yanru; Tian, Hanlin; Zhang, Jian; Mu, Wenxiang; Zhang, Baitao; Jia, Zhitai; He, Jingliang; Tao, Xutang

2017-11-01

In order to further improve the Nd3+:(LuxGd1-x)3Ga5O12 (Nd:LGGG) crystal performance in high power laser field, a long Nd:LGGG crystal with dimensions of Φ 23 × 112 mm3 has been grown successfully by the Czochralski (Cz) method for laser rod fabrication. Compared with the normal size LGGG crystals (like 30-50 mm in length), we overcame several difficulties in the growth of longer ones, including crystal cracking by a large longitudinal temperature gradient, spiral growth by a small radial temperature gradient, and growth instability and even constitutional super cooling by Ga2O3 volatilizing continuously. The doping concentrations of Nd3+ and Lu3+ in the as-grown crystal and the crystal optical quality have been measured. The performance of diode-side-pumped Nd:LGGG rod laser has been preliminarily tested for the first time, simply by replacing the Nd:YAG crystal rod inside a commercial laser module. Under an incident pump power of 160 W, the maximum continuous wave output power of 38 W has been obtained, corresponding to an optical-optical conversion efficiency of 23.8% and a slope efficiency of 40.8%, respectively.

Comparison of relevant parameters of multi-pixel sensors for tracker detectors after irradiation with high proton and neutron fluences

International Nuclear Information System (INIS)

Bergholz, Matthias

2016-03-01

The further increase of the luminosity of the Large Hadron Collider (LHC) at CERN requires new sensors for the tracking detector of the Compact Muon Soleniod (CMS) experiment. These sensors must be more radiation hard and of a finer granularity to lower the occupancy. In addition the new sensor modules must have a lower material budget and have to be self triggering. Sensor prototypes, the so called ''MPix''-sensors, produced on different materials were investigated for their radiation hardness. These sensors were fully characterized before and after irradiation. Of particular interest was the comparison of different bias methods, different materials and the influence of various geometries. The degeneration rate differs for the different sensor materials. The increase of the dark current of Float-Zone-Silicon is stronger for thicker sensors and less than for Magnetic-Czochralski-Silicon sensors. Both tested bias structures are damaged by the irradiation. The poly silicon resistance increases after irradiation by fifty percent. The Punch-Through-Structure is more effected by irradiation. The punch-through voltage increase by a factor of two. Due to the higher pixel current, the working point of the sensor is shifted to smaller differential resistances.

Nd-doped Lu3Al5O12 single-crystal scintillator for X-ray imaging

International Nuclear Information System (INIS)

Sugiyama, Makoto; Fujimoto, Yutaka; Yanagida, Takayuki; Totsuka, Daisuke; Chani, Valery; Yokota, Yuui; Yoshikawa, Akira

2013-01-01

The optical and scintillation properties of Nd-doped Lu 3 Al 5 O 12 (Nd:LuAG) crystals grown by the Czochralski (Cz) method were examined under X-ray excitation. Their applicability for X-ray imaging was also inspected. The radioluminescence spectrum induced by X-rays showed a broad host emission and sharp Nd 3+ 4f–4f emission peaks in the UV to visible wavelengths. The light output current of the Nd:LuAG was 85% of that of a standard CdWO 4 X-ray scintillator. The afterglow value measured 20 ms after X-ray irradiation was 1.5%. An X-ray radiographic image was successfully obtained using the Nd:LuAG scintillator coupled with the charge coupled device (CCD) photodetector. -- Highlights: ► The Nd:LuAG single crystal was produced to perform X-ray imaging test. ► The sample exhibited the 85% light output current of the standard CdWO 4 . ► The afterglow intensity of the sample was very high compared with the CdWO 4 . ► The X-ray radiographic image was obtained from the Nd:LuAG single crystal

Basic study of single crystal fibers of Pr:Lu3Al5O12 scintillator for gamma-ray imaging applications

International Nuclear Information System (INIS)

Yanagida, Takayuki; Kamada, Kei; Kawaguchi, Noriaki; Fujimoto, Yutaka; Fukuda, Kentaro; Yokota, Yuui; Chani, Valery; Yoshikawa, Akira

2011-01-01

Single-crystalline fibers were grown from 0.25, 0.70, and 1.50 mol% Pr-doped Lu 3 Al 5 O 12 (LuAG) melts by the micro-pulling down (μ-PD) method with a diameter of 0.3-0.5 mm and a length of about 200 mm. They were cut to 10 mm long specimens, and their scintillation properties, including light yield and decay time profile, were examined. These results were compared with corresponding properties of the specimens (0.8x0.8x10 mm 3 ) cut from the bulk crystals produced by conventional Czochralski (CZ) growth. The μ-PD-grown fibers demonstrated relatively low light yield and had the same decay time constant when compared with those of the samples cut from the CZ-grown crystals. The fiber crystals were used to assemble scintillating arrays with dimensions of O 0.5x10 mm 2 x20 pixels and O 0.3x10 mm 2 x30 pixels coated by a BaSO 4 reflector. After optical coupling with a position sensitive photomultiplier tube, the fiber-based arrays demonstrated acceptable imaging capability with a spatial resolution of about 0.5 mm.

Evaluation of the performance of a Ho: Sc2SiO5 laser pumped by a Tm:YAP laser

Science.gov (United States)

Yang, Xiao-tao; Xie, Wen-qiang; Li, Wen-hui; Li, Xue-min

2016-05-01

A continuous-wave 0.5 % Ho3+-doped Ho:Sc2SiO5 (Ho:SSO) laser output at 2112 nm pumped by a Tm:YAP laser is reported. The Ho:SSO bulk crystal was grown by the Czochralski technique. A maximum laser power of 3.72 W was obtained with a slope efficiency of 32.9%, when the transmittance of output mirror was 30%. In this experiment, two output mirrors with different transmittance were also researched. The output spectra of Ho:SSO laser with different output mirrors are also given. The M 2 factor is found to be 1.29. In addition, the absorption and emission spectra are given in this paper.

Precursor defect to the vacancy-dioxygen center in Si

International Nuclear Information System (INIS)

Londos, C.A.; Sarlis, N.; Fytros, L.G.; Papastergiou, K.

1996-01-01

In a recent paper [Phys. Rev. B 50, 11531 (1994)] we have tentatively attributed two new infrared bands at 914 cm -1 and 1000 cm -1 , in neutron-irradiated Czochralski-grown silicon, to a [VO+O i ] structure that was considered to develop as an intermediate stage in the process of conversion of a VO center to a VO 2 complex upon heat treatment. As a continuation of this work, we further investigate [VO+O i ] structure and the formation of intermediate defects. In addition, we present semiempirical calculations of the localized vibrational mode frequencies of the [VO+O i ] defect. The results are consistent with the experimental observations. copyright 1996 The American Physical Society

Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation

Science.gov (United States)

Veirman, J.; Dubois, S.; Enjalbert, N.; Garandet, J. P.; Heslinga, D. R.; Lemiti, M.

2010-06-01

This letter focuses on the variation of the Hall majority carrier mobility with the dopant compensation level in purely Boron-doped Czochralski grown silicon single crystals. Compensation was varied continuously at the sample scale via a step by step activation of the oxygen-based thermal donors. At room temperature, we show a strong drop in mobility for high compensation levels in both p- and n-type Si. Mobility models taking into account carrier scattering on ionized impurities and phonons could not reproduce this drop. We conclude that a specific effect of compensation must be taken into account to explain the observed behaviour. We qualitatively discuss physical mechanisms susceptible to reduce mobility in highly compensated Si.

Evaluation of the performance of a Ho: Sc2SiO5 laser pumped by a Tm:YAP laser

International Nuclear Information System (INIS)

Yang, Xiao-tao; Xie, Wen-qiang; Li, Wen-hui; Li, Xue-min

2016-01-01

A continuous-wave 0.5 % Ho 3+ -doped Ho:Sc 2 SiO 5 (Ho:SSO) laser output at 2112 nm pumped by a Tm:YAP laser is reported. The Ho:SSO bulk crystal was grown by the Czochralski technique. A maximum laser power of 3.72 W was obtained with a slope efficiency of 32.9%, when the transmittance of output mirror was 30%. In this experiment, two output mirrors with different transmittance were also researched. The output spectra of Ho:SSO laser with different output mirrors are also given. The M 2 factor is found to be 1.29. In addition, the absorption and emission spectra are given in this paper. (paper)

Characterization of oxygen dimer-enriched silicon detectors

CERN Document Server

Boisvert, V; Moll, M; Murin, L I; Pintilie, I

2005-01-01

Various types of silicon material and silicon p+n diodes have been treated to increase the concentration of the oxygen dimer (O2i) defect. This was done by exposing the bulk material and the diodes to 6 MeV electrons at a temperature of about 350 °C. FTIR spectroscopy has been performed on the processed material confirming the formation of oxygen dimer defects in Czochralski silicon pieces. We also show results from TSC characterization on processed diodes. Finally, we investigated the influence of the dimer enrichment process on the depletion voltage of silicon diodes and performed 24 GeV/c proton irradiations to study the evolution of the macroscopic diode characteristics as a function of fluence.

Dark properties and transient current response of Si0.95Ge0.05 n+p devices

International Nuclear Information System (INIS)

Ruzin, Arie; Marunko, S.; Abrosimov, N.V.; Riemann, H.

2004-01-01

In this study we present the dark properties of 'pin' devices fabricated with Czochralski grown Si 0.95 Ge 0.05 bulk single crystals. The growth of such material is most challenging because of the constitutional supercooling effect. The potential advantages of Si 1-x Ge x to be used for X- and gamma-ray detection applications are overviewed. At room temperature the generation current in the devices is too high for spectroscopy applications, but enables transient current technique (TCT) measurements. The current however drops significantly with moderate cooling. The effective majority carrier concentration is shown to be ∼2x10 14 cm -3 , and hole mobility ∼320 cm 2 /V s

Determination of uranium and thorium in semiconductor memory materials by high fluence neutron activation analysis

International Nuclear Information System (INIS)

Dyer, F.F.; Emery, J.F.; Northcutt, K.J.; Scott, R.M.

1981-01-01

Uranium and thorium were measured by absolute neutron activation analysis in high-purity materials used to manufacture semiconductor memories. The main thrust of the study concerned aluminum and aluminum alloys used as sources for thin film preparation, evaporated metal films, and samples from the Czochralski silicon crystal process. Average levels of U and Th were found for the source alloys to be approx. 65 and approx. 45 ppB, respectively. Levels of U and Th in silicon samples fell in the range of a few parts per trillion. Evaporated metal films contained about 1 ppB U and Th, but there is some question about these results due to the possibility of contamination

Proton irradiation effects in silicon devices

Energy Technology Data Exchange (ETDEWEB)

Simoen, E; Vanhellemont, J; Alaerts, A [IMEC, Leuven (Belgium); and others

1997-03-01

Proton irradiation effects in silicon devices are studied for components fabricated in various substrates in order to reveal possible hardening effects. The degradation of p-n junction diodes increases in first order proportionally with the fluence, when submitted to 10 MeV proton irradiations in the range 5x10{sup 9} cm{sup -2} to 5x10{sup 11} cm{sup -2}. The damage coefficients for both p- and n-type Czochralski, Float-Zone and epitaxial wafers are reported. Charge-Coupled Devices fabricated in a 1.2 {mu}m CCD-CMOS technology are shown to be quite resistant to 59 MeV H{sup +} irradiations, irrespective of the substrate type. (author)

Optical properties and radiation response of Ce3+-doped GdScO3 crystals

International Nuclear Information System (INIS)

Yamaji, Akihiro; Fujimoto, Yutaka; Futami, Yoshisuke; Yokota, Yuui; Kurosawa, Shunsuke; Kochurikhin, Vladimir; Yanagida, Takayuki; Yoshikawa, Akira

2012-01-01

10%-Ce doped GdScO 3 perovskite type single crystal was grown by the Czochralski process. The Ce concentration in the crystal was measured. No impurity phases were observed by powder X-ray diffraction analysis. We evaluated the optical and radiation properties of the grown crystal. Ce:GdScO 3 crystal showed photo- and radio-luminescence peaks due to Ce 3+ of 5d-4f transition and colour centre. The photoluminescence decay time was sub-ns order. The relative light yield under 5.5 MeV alpha-ray excitation was calculated to be approximately 9% of BGO. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optical properties and radiation response of Ce{sup 3+}-doped GdScO{sub 3} crystals

Energy Technology Data Exchange (ETDEWEB)

Yamaji, Akihiro; Fujimoto, Yutaka; Futami, Yoshisuke; Yokota, Yuui; Kurosawa, Shunsuke [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Kochurikhin, Vladimir [General Physics Institute, 38 Vavilov Str., 119991 Moscow (Russian Federation); Yanagida, Takayuki [New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Yoshikawa, Akira [Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center, Tohoku University, 6-6-10 Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

2012-12-15

10%-Ce doped GdScO{sub 3} perovskite type single crystal was grown by the Czochralski process. The Ce concentration in the crystal was measured. No impurity phases were observed by powder X-ray diffraction analysis. We evaluated the optical and radiation properties of the grown crystal. Ce:GdScO{sub 3} crystal showed photo- and radio-luminescence peaks due to Ce{sup 3+} of 5d-4f transition and colour centre. The photoluminescence decay time was sub-ns order. The relative light yield under 5.5 MeV alpha-ray excitation was calculated to be approximately 9% of BGO. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Continuous Czochralski Growth. Silicon Sheet Growth Development of the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project

Science.gov (United States)

Merz, F.

1979-01-01

During the reporting period, a successful 100 kilogram run was performed. Six ingots of 13 cm diameter were grown, ranging in size from 15.5 kg to 17.7 kg. Melt replenishment methods included both poly rod and lump feed material. Samples from each ingot were prepared for solar cell fabrication and analyses, impurity analysis, and structural studies. The furnace was converted to the 14-inch hot zone and preliminary heat runs were performed. Two sucessful runs were demonstrated, by growing 25 kg ingots from 30 kg melts. Also, a 100 kg run was attempted, utilizing the 14 inch crucible hot zone, but was prematurely terminated due to excessive monoxide which accumulated on the viewports and a seed failure.

Development of advanced methods for continuous Czochralski growth. Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

Science.gov (United States)

Wolfson, R. G.; Sibley, C. B.

1978-01-01

The three components required to modify the furnace for batch and continuous recharging with granular silicon were designed. The feasibility of extended growth cycles up to 40 hours long was demonstrated by a recharge simulation experiment; a 6 inch diameter crystal was pulled from a 20 kg charge, remelted, and pulled again for a total of four growth cycles, 59-1/8 inch of body length, and approximately 65 kg of calculated mass.

Thermal analysis of rare earth gallates and aluminates

International Nuclear Information System (INIS)

O'Bryan, H.M.; Gallagher, P.K.; Berkstresser, G.W.; Brandle, C.D.

1990-01-01

Dilatometry, high-temperature x-ray diffraction, differential thermal analysis, and differential scanning calorimetry have been performed on LaGaO 3 , NdGaO 3 , PrGaO 3 , SmAlO 3 , and LaAlO 3 single crystals grown by the Czochralski technique. First order phase transitions have been located at 145 degree C for LaGaO 3 and 785 degree C for SmAlO 3 , and ΔH has been measured for the LaGaO 3 transition. Second order transitions have been identified for LaGaO 3 , PrGaO 3 , NdGaO 3 , and LaAlO 3 . The usefulness of these compounds as substrates for high temperature superconducting films is discussed in terms of thermal expansion matching

Radiation thermometry for semiconductor crystal growing furnaces

International Nuclear Information System (INIS)

Helgeland, W.

1985-01-01

Single crystals of silicon produced by the Czochralski process are used widely in the production of integrated circuits and other electronic devices. Recent advances in automation of industrial equipment for this process have led to the application of a dual wave band radiation thermometer. The instrument system automatically performs certain critical temperature measurements. In nonautomated equipment, these measurements require the judgement of a trained human operator. The difficulties of measuring and controlling the temperature at the critical location are discussed, especially with regard to detecting the meltdown end point and to initially establishing the correct temperature for seeding. A description is given of the customized temperature measurement system, which is based upon an existing ratio radiation thermometer. Thermometer output characteristics are described

Electronic defect levels in continuous wave laser annealed silicon metal oxide semiconductor devices

Science.gov (United States)

Cervera, M.; Garcia, B. J.; Martinez, J.; Garrido, J.; Piqueras, J.

1988-09-01

The effect of laser treatment on the bulk and interface states of the Si-SiO2 structure has been investigated. The annealing was performed prior to the gate metallization using a continuous wave Ar+ laser. For low laser powers the interface state density seems to decrease slightly in comparison with untreated samples. However, for the highest irradiating laser powers a new bulk level at 0.41 eV above the valence band with concentrations up to 1015 cm-3 arises probably due to the electrical activation of the oxygen diluted in the Czochralski silicon. Later postmetallization annealings reduce the interface state density to values in the 1010 cm-2 eV-1 range but leave the concentration of the 0.41-eV center nearly unchanged.

Growth of misfit dislocation-free p/p+ thick epitaxial silicon wafers on Ge-B-codoped substrates

International Nuclear Information System (INIS)

Jiang Huihua; Yang Deren; Ma Xiangyang; Tian Daxi; Li Liben; Que Duanlin

2006-01-01

The growth of p/p + silicon epitaxial silicon wafers (epi-wafers) without misfit dislocations has been successfully achieved by using heavily boron-doped Czochralski (CZ) silicon wafers codoped with desirable level of germanium as the substrates. The lattice compensation by codoping of germanium and boron into the silicon matrix to reduce the lattice mismatch between the substrate (heavily boron-doped) and epi-layer (lightly boron-doped) is the basic idea underlying in the present achievement. In principle, the codoping of germanium and boron in the CZ silicon can be tailored to achieve misfit dislocation-free epi-layer with required thickness. It is reasonably expected that the presented solution to elimination of misfit dislocations in the p/p + silicon wafers can be applied in the volume production

Ground-state splitting of ultrashallow thermal donors with negative central-cell corrections in silicon

Science.gov (United States)

Hara, Akito; Awano, Teruyoshi

2017-06-01

Ultrashallow thermal donors (USTDs), which consist of light element impurities such as carbon, hydrogen, and oxygen, have been found in Czochralski silicon (CZ Si) crystals. To the best of our knowledge, these are the shallowest hydrogen-like donors with negative central-cell corrections in Si. We observed the ground-state splitting of USTDs by far-infrared optical absorption at different temperatures. The upper ground-state levels are approximately 4 meV higher than the ground-state levels. This energy level splitting is also consistent with that obtained by thermal excitation from the ground state to the upper ground state. This is direct evidence that the wave function of the USTD ground state is made up of a linear combination of conduction band minimums.

Mobility of carriers in the case of diffuse motion in the configuration space of restructuring divacancies in silicon

International Nuclear Information System (INIS)

Dolgolenko, A.P.

2014-01-01

Calculated temperature dependence of the electron mobility and describes the behavior of holes in high resistance silicon Czochralski grown and float zone melting, after irradiation by fast neutrons reactor and a subsequent isochronous and isothermal annealing. In the framework of the elaborated model of defect clusters was calculated temperature dependence of the concentration of electrons and holes in silicon samples. It is shown that the configuration change divacancies in clusters of defects and in conducting matrix leads to increase in the height of the drift barriers and concentration of long-wave phonons in conducting matrix samples of silicon. It was defined temperature dependence of the height of the drift barriers in the process of ageing at room temperature n-Si

Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

Directory of Open Access Journals (Sweden)

Jia Ge

2014-01-01

Full Text Available We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar n-type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms−1 and an implied open-circuit voltage (Voc of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.

Achievement report for fiscal 1981 Sunshine Program on development of practical application technologies for photovoltaic power systems. Development of photovoltaic demonstration systems (Research and development of systems for factories); 1981 nendo taiyoko hatsuden system jitsuyoka gijutsu kaihatsu seika hokokusho. Taiyoko hatsuden demonstration system kaihatsu (kojoyo system no kenkyu kaihatsu)

Energy Technology Data Exchange (ETDEWEB)

NONE

1982-03-01

In the effort at constituting an optimum system, a 2kwp mini-system is completed after designing and introducing an array output measuring unit, DC control unit, dummy loads, etc. The system is actually operated for collecting various data, and commercial noise, transmission line safety, surplus power utilization, solar cell utilization rate, efficiency of various kinds, etc., are subjected to analysis. The basic designs of measuring instruments for a 100kwp full-scale system are also examined. In relation with the manufacture, testing, and arrangement of solar cell arrays, a large solar simulator is designed and introduced for the measurement of module photoelectric characteristics. Using this simulator, continuous irradiation is performed by a 1kW/m{sup 2} light beam of a spectral distribution of AM (air mass) 1.5. A CZ (Czochralski) single crystal, EFG (edge defined film bed growth method) ribbon, and a small CdS/CdTe solar cell module are installed, through the use of which operating characteristics are determined for comparative study. A DC control unit is designed and built, composed of a rectifying device for the dissolution of noise that greatly affects measurement for the mini-system, DC-AC-DC converter, and a remote control console. (NEDO)

Growth of high-temperature superconductor crystals from flux

International Nuclear Information System (INIS)

Demianets, L.N.; Bykov, A.B.; Melnikov, O.K.; Stishov, S.M.

1991-01-01

Crystallization of high-temperature superconductors was studied in La-Sr-Cu-O, Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O systems. Platelet crystals YBa 2 Cu 3 Osub(6.5+x) were obtained by spontaneous crystallization from homogeneous nonstoichiometric melts enriched in barium and copper oxides. Lasub(2-x)Sr x CuO 4 was prepared by slow cooling of melts enriched in copper oxide. Bi 2 (Sr, Ca)sub(n+1)Cu n O y , (n=1;2) was obtained by melting zone travelling. The crystals show transition to superconducting state at T=93K, ΔT 0.2-0.5 K (Y, Ba cuprate), T=87K, ΔT 2K (Bi, Sr, Ca-cuprate). La, Sr-cuprate single crystals obtained by Czochralski method did not show transition to superconducting state. For flux-grown crystals T c was 5-26 K depending on the composition, growth and heat treatment. The short characterization of some accessory phases (Ba 3 Y 2 Cu 3 PtO 10 , Casub(1.75)Srsub(1.5)Cusub(0.75)PtO 6 , BaCuO 2 , Ba 41 Cu 44 O 84 Cl 2 ) is reported. (author). 15 ref s., 8 figs

Crystal growth, spectroscopic characterization and laser performance of Tm/Mg:LiNbO3 crystal

Science.gov (United States)

Zhang, P. X.; Yin, J. G.; Zhang, R.; Li, H. Q.; Xu, J. Q.; Hang, Y.

2014-03-01

A Tm, Mg co-doped LiNbO3 crystal was grown by the traditional Czochralski method. The room-temperature absorption, photo-luminescence spectra and fluorescence lifetime of Tm3+ ions in the crystal have been investigated. The experimental results show that the co-doped of MgO can lead to the lengthening of the measured fluorescence lifetime of the upper Tm3+:3F4 level. Based on the Judd-Ofelt approach, the intensity parameters Ω2,4,6 of Tm3+ were calculated to be Ω2 (6.29 × 10-20 cm2), Ω4 (0.54 × 10-20 cm2) and Ω6 (0.79 × 10-20 cm2). Other spectroscopic parameters that relate to laser performance were also obtained. Non-photorefractive continuous wave laser operation with a Tm, Mg:LiNbO3 single crystal is demonstrated at room temperature for the first time. We obtained 1.026 W output power at 1.885 μm with a slope efficiency of near 14%, which, to the best of our knowledge, is the largest output power and the highest slope efficiency obtained for this crystal thus far. The output power was observed to be stable, and the crystal showed no sign of photorefractive damage.

Spectroscopic properties and laser performance at 1,066 nm of a new laser crystal Nd:GdTaO4

Science.gov (United States)

Peng, Fang; Yang, Huajun; Zhang, Qingli; Luo, Jianqiao; Liu, Wenpeng; Sun, Dunlu; Dou, Renqin; Sun, Guihua

2015-03-01

A new laser medium Nd3+:GdTaO4 single crystal with high optical quality was grown successfully by the Czochralski method, and its high-efficiency laser operation at 1,066 nm was demonstrated for the first time. The absorption cross section of the crystal at 808 nm is 5.098 × 10-20 cm2, and the full width at half maximum of this absorption band is about 6 nm. Spectral properties are investigated by Judd-Ofelt theory. The stimulated emission cross section at 1,066 nm is 3.9 × 10-19 cm2, and the fluorescence lifetime of 4F3/2 level is 178.4 μs. A diode end-pumped Nd:GdTaO4 laser at 1,066 nm with the maximum output power of 2.5 W is achieved in the continuous-wave mode. The optical-to-optical conversion efficiency and slope efficiency are 34.6 and 36 %, respectively. In addition, the fluorescence branching ratio of 4F3/2 → 4I9/2 transition reaches 44.4 %, indicating that Nd:GdTaO4 may be an efficient laser medium at 920 nm. All the results demonstrate that Nd:GdTaO4 crystal is a good candidate for laser diode-pumped laser material.

Growth and laser characterization of a mixed laser crystal Nd: Lu 0.141Y 0.855VO 4

Science.gov (United States)

Zhao, Bin; Zhuang, Naifeng; Li, Tao; Guo, Feiyun; Zhuo, Zhuang; Ye, Jing; Chen, Jianzhong

2011-11-01

A new Nd: Lu 0.141Y 0.855VO 4 mixed laser crystal had been successfully grown by the Czochralski method. The reason of the crystal boule appearing additionally yellowish at the bottom was discussed. The X-ray powder diffraction analysis showed that the as-grown mixed crystal possesses the ZrSiO 4 structure. The effective segregation coefficients of Nd 3+ and Lu 3+ ions in the crystal were measured to be about 0.51 and 0.76, respectively. The room temperature fluorescence spectrum of the mixed crystal showed that the FWHM (full-width at half-maximum) of the 1064.9 nm fluorescence band was 5.1 nm, broader than that of Nd: YVO 4. A continuous-wave (CW) laser output was achieved with the Nd: Lu 0.141Y 0.855VO 4 crystal at 1.06 μm using laser diode pumping. The maximum CW output power of 1.7 W was obtained with the pump power of 7.6 W, higher than the 1.38 W achieved with the 0.5 at% Nd: LuVO 4 crystal under the same experimental conditions. All the results above show that the Nd: Lu 0.141Y 0.855VO 4 crystal is a promising laser material.

Refractive Indices in Undoped and MgO-Doped Near-Stoichiometric LiTaO3 Crystals

Science.gov (United States)

Nakamura, Masaru; Higuchi, Shinji; Takekawa, Shunji; Terabe, Kazuya; Furukawa, Yasunori; Kitamura, Kenji

2002-04-01

Undoped and MgO (0.5 and 1.0-mol%)-doped near-stoichiometric LiTaO3 (SLT) crystals were grown from off-congruent Li-rich solutions (Li˜ 60 mol%) by the double-crucible Czochralski method using a continuous SLT ceramic grain charging system. Curie temperatures of the undoped and MgO (0.5 and 1.0-mol%)-doped SLT crystals are 688, 694 and 695°C, respectively. The ordinary and extraordinary refractive indices (no, ne) of these crystals were measured by the prism coupling technique in the wavelength range from 0.440 to 1.050 μm at room temperature, and the temperature-independent Sellmeier equations for each crystal were derived from the measured refractive index data. no of the SLT crystal was almost the same as that of a congruent-melt LiTaO3 (CLT) crystal, while ne of the SLT crystal was lower than that of the CLT crystal. ne was lower than no for the SLT crystal, similar to as in the case of the LiNbO3 crystal. The refractive indices of the SLT crystal, no and ne, were found to be almost independent of MgO concentration at the doping level of 0.5 and 1.0 mol%.

Elaboration and characterization of a KCl single crystal doped with nanocrystals of a Sb2O3 semiconductor

International Nuclear Information System (INIS)

Bouhdjer, L.; Addala, S.; Halimi, O.; Boudine, B.; Sebais, M.; Chala, A.

2013-01-01

Undoped and doped KCl single crystals have been successfully elaborated via the Czochralski (Cz) method. The effects of dopant Sb 2 O 3 nanocrystals on structural and optical properties were investigated by a number of techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDAX) analysis, UV-visible and photoluminescence (PL) spectrophotometers. An XRD pattern of KCl:Sb 2 O 3 reveals that the Sb 2 O 3 nanocrystals are in the well-crystalline orthorhombic phase. The broadening of diffraction peaks indicated the presence of a Sb 2 O 3 semiconductor in the nanometer size regime. The shift of absorption and PL peaks is observed near 334 nm and 360 nm respectively due to the quantum confinement effect in Sb 2 O 3 nanocrystals. Particle sizes calculated from XRD studies agree fairly well with those estimated from optical studies. An SEM image of the surface KCl:Sb 2 O 3 single crystal shows large quasi-spherical of Sb 2 O 3 crystallites scattered on the surface. The elemental analysis from EDAX demonstrates that the KCl:Sb 2 O 3 single crystal is slightly rich in oxygen and a source of excessive quantities of oxygen is discussed. (semiconductor materials)

Influence of irradiation on mechanical properties of Si-Ge alloys

Energy Technology Data Exchange (ETDEWEB)

Sichinava, Avtandil; Bokuchava, Guram; Chubinidze, Giorgi; Archuadze, Giorgi [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Gapishvili, Nodar [Ilia Vekua Sukhumi Institute of Physics and Technology, Tbilisi (Georgia); Georgian Technical University, Tbilisi (Georgia)

2017-07-15

Impact of various irradiation (Ar and He ions, high energy electrons) on microhardness and indentation of monocrystalline Si{sub 0,98}Ge{sub 0,02} alloy is studied. Samples of Si and SiGe alloy are obtained by Czochralski (CZ) method in the [111] direction in the atmosphere of high purity Ar. High energy electron irradiation with fluence of ∝10{sup 12} cm{sup -2} is conducted at the Clinac 2100iX. Ar and He ion implantation is performed on modernized ''VEZUVI-3M'' plant. It is shown that for all types of irradiation the microhardness and indentation modulus versus load are characterized by reverse indentation size effect (ISE). With the increase of fluences of Ar and He ions, the maximum value of the effect increases. At high values of loading force impact on the indenter the mechanical characteristics slowly decrease. Impact of isochronous thermal annealing on mechanical properties of high energy electron irradiated samples is studied. Non-monotonic changes of microhardness and indentation modulus are revealed in the temperature range of 200-260 C. It is proposed that such changes are caused by radiation defects transformation. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Growth of semi-insulating InP through nuclear doping

International Nuclear Information System (INIS)

Aliyev, M.I; Rashidova, Sh.Sh; Huseynli, M.A.

2012-01-01

Full text : Semi-insulating semiconductors are widely used in so-called dielectronics. Dielectric devices have quick response, good frequency characteristics, a low noise level, low sensitivity to temperature changes, etc. One of the most promising semiconductor materials is InP. At present annealing and doping are commonly used techniques to grow semi-insulating InP. The aim of this work was to grow semi-insulating InP through nuclear doping (by irradiation with gamma-quanta). InP single crystals were obtained by Czochralski method. Specimens were irradiated with doses of 10kGr at room temperature. Electrical conductivity and Hall effect were measured before and after irradiation in the temperature range 77 to 320K. After irradiation reduction in electrical conductivity was observed. This fact can be associated with formation of M-centers in positively threefold charged states of vacancy and antisite defects. Under irradiation first Ini interstitial atoms and phosphorus vacancies form. Further, the Ini atoms occupy the phosphorus vacancies. As a result there appear InP antiste defects, which along with indium vacancies form V I nI n p + In p + + complexes of the acceptor type. These complexes turn out to be traps for charge carriers and electrical conductivity of irradiated InP are sharply reduced to semi-insulating specimens

Optical orientation of Mn{sup 2+} ions in GaAs

Energy Technology Data Exchange (ETDEWEB)

Langer, Lukas; Bayer, Manfred [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); Akimov, Ilya A.; Yakovlev, Dmitri R. [Experimentelle Physik 2, Technische Universitaet Dortmund, 44221 Dortmund (Germany); A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Dzhioev, Roslan I.; Korenev, Vladimir L.; Kusrayev, Yuri G.; Sapega, Victor F. [A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

2011-07-01

We report on optical orientation of Mn{sup 2+} ions in bulk GaAs under application of weak longitudinal magnetic fields (B {<=}150 mT). The studied samples were grown by liquid phase epitaxy and Czochralski method and were doped with a low Mn acceptor concentration of 8 x 10{sup 18} cm{sup -3}. Time resolved measurements of circular polarization for donor-acceptor photoluminescence in Faraday geometry reveal nontrivial spin dynamics of donor localized electrons. Initially the degree of polarization of the electron spins is 40%. It then decays within some tens of ns to reach a plateau. The plateau is absent at B=0 T and saturates at B=150 mT reaching the value of 35%. It's sign changes with the helicity of incident light. It follows that the s-d exchange interaction with optically oriented electrons induces a steady state non-equilibrium polarization of the Mn{sup 2+} ions. The latter maintain their spin and return part of the polarization back to the electron spin system, resulting in the plateau. This provides a long-lived electron spin memory in GaAs doped with Mn. The dynamical polarization of ionized Mn acceptors was also directly monitored using spin flip Raman scattering spectroscopy, in agreement with time-resolved data.

Optical properties of calcium barium niobate

Energy Technology Data Exchange (ETDEWEB)

Heine, Urs; Betzler, Klaus [Department of Physics, University of Osnabrueck (Germany); Burianek, Manfred; Muehlberg, Manfred [Institute of Crystallography, University of Cologne (Germany)

2010-07-01

We report on optical measurements on the novel tungsten bronze type calcium barium niobate. [001]-oriented transparent and colorless single crystals were grown by the Czochralski method with dimensions of 12 mm in diameter and about 80 mm in length. With its relatively high Curie temperature of about 538 K for the congruently melting composition of 28.1 mole% calcium and its high nonlinear coefficients, CBN is a promising material for future applications. Recent experiments revealed, that the application of an external electric field of several kV/cm to CBN at room temperature leads to an increasing opacity of the sample. This might be a drawback considering the future usability of CBN in optical systems. We present investigations on the transmittance behaviour of CBN under external electric fields, demonstrating the erasement of the clouding without affecting the polarization. Experiments have been performed at temperatures ranging from room temperature to approximately 480 K. When heating up the sample, its colorless appearance changes to a light yellow, which can be attributed to a shift of the band edge to longer wavelengths with increasing temperature. To further investigate the transmittance properties of CBN, measurements of the band edge under various temperatures up to the ferroelectric phase transition have been performed.

Development of high quality large laser crystals for a CPA laser system

International Nuclear Information System (INIS)

Sugiyama, Akira; Fukuyama, Hiroyasu; Nagai, Shiro; Katsurayama, Masamichi; Anzai, Yutaka

2000-01-01

Uniform doped concentration along growth direction of Nd 3+ :YAG crystal with 110 mm length was successfully grown by the Czochralski furnace with a double crucible. The fluctuation of doped concentration was less than 4%, nearly 1/4 of the Nd 3+ :YAG crystal grown by a conventional method. We also demonstrated direct bonding without the use of adhesive materials on Ti:sapphire laser crystals with a bonding surface dimension of 12 mm x 6 mm. The bonding surfaces were treated with chemical processes to clean up and to create a hydrophilic layer for hydrogen bonding in an atmospheric furnace. Successive heat treatment in a vacuum furnace transformed the hydrogen bonding into the direct bonding. From the observation by a transmission electron microscope (Hitachi: HF-2000), atomic level bonding was succeeded in the bonding surface. The performance of the bonded crystal was also tested by laser oscillation with a second harmonics of Q-switched Nd 3+ :YAG at a 20 Hz repetition rate. In comparison with a normal laser crystal, there were no difference in output power or spatial profile in an input condition of 30 mJ. The optical damaged threshold on the bonding surface was estimated over 660 MW/cm 2 . (author)

Dimer self-organization of impurity ytterbium ions in synthetic forsterite single crystals

Science.gov (United States)

Tarasov, V. F.; Sukhanov, A. A.; Dudnikova, V. B.; Zharikov, E. V.; Lis, D. A.; Subbotin, K. A.

2017-07-01

Paramagnetic centers formed by impurity Yb3+ ions in synthetic forsterite (Mg2SiO4) grown by the Czochralski technique are studied by X-band CW and pulsed EPR spectroscopy. These centers are single ions substituting magnesium in two different crystallographic positions denoted M1 and M2, and dimer associates formed by two Yb3+ ions in nearby positions M1. It is established that there is a pronounced mechanism favoring self-organization of ytterbium ions in dimer associates during the crystal growth, and the mechanism of the spin-spin coupling between ytterbium ions in the associate has predominantly a dipole-dipole character, which makes it possible to control the energy of the spin-spin interaction by changing the orientation of the external magnetic field. The structural computer simulation of cluster ytterbium centers in forsterite crystals is carried out by the method of interatomic potentials using the GULP 4.0.1 code (General Utility Lattice Program). It is established that the formation of dimer associates in the form of a chain parallel to the crystallographic axis consisting of two ytterbium ions with a magnesium vacancy between them is the most energetically favorable for ytterbium ions substituting magnesium in the position M1.

Scintillation properties of transparent Lu{sub 3}Al{sub 5}O{sub 12} (LuAG) ceramics doped with different concentrations of Pr{sup 3+}

Energy Technology Data Exchange (ETDEWEB)

Yanagida, Takayuki; Fukabori, Akihiro; Fujimoto, Yutaka; Kamada, Kei; Yokota, Yuui; Yoshikawa, Akira; Chani, Valery [IMRAM, Tohoku University, 2-1-1 Katahira Aoba-ku, 980-8577 Sendai (Japan); Ikesue, Akio [World Labo, Co. Ltd., Mutsuno 2-4-1, Atsuta, 456-0023 Nagoya (Japan); Kataoka, Jun [School of Advanced Science and Engineering,Waseda University, Ohkubo 3-4-1, Shinjuku, 169-0072 Tokyo (Japan)

2011-01-15

Transparent ceramics of Pr-doped (0.2 mol%, 0.6 mol%, 1 mol%, and 2 mol%) Lu{sub 3}Al{sub 5}O{sub 12} (LuAG) scintillators produced by the sintering method are discussed. These materials were cut to the specimens with physical dimensions of 5 x 5 x 2 mm{sup 3}. Similar size specimens were also prepared from Czochralski grown Pr:LuAG single crystals to compare scintillation properties. Their transmittance and radio luminescence spectra were evaluated. All specimens were highly transparent in wavelength range above 300 nm, and intense Pr{sup 3+} 5d-4f emission was detected around 310 and 370 nm under excitation with X-ray. Under {sup 137}Cs {gamma}-ray is irradiation, 2 keV photo-absorption peaks were also clearly observed in each sample. The Pr 0.6 mol% doped LuAG ceramics demonstrated highest light yield achievable among the ceramics, and it was half of that observed in the single crystals. Under pulse X-ray excitation, the decay time constants became faster when Pr concentration increased, and. the fastest decay ({proportional_to}5.7 ns time constant) was noticed in the 2 mol% doped ceramic. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Basic study of single crystal fibers of Pr:Lu{sub 3}Al{sub 5}O{sub 12} scintillator for gamma-ray imaging applications

Energy Technology Data Exchange (ETDEWEB)

Yanagida, Takayuki, E-mail: t_yanagi@tagen.tohoku.ac.jp [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Kamada, Kei [Materials Research Laboratory, Furukawa Co., Ltd., 1-25-13 Kannondai, Tukuba Ibaragi 305-0856 (Japan); Kawaguchi, Noriaki [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Tokuyama Corporation, Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 (Japan); Fujimoto, Yutaka [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Fukuda, Kentaro [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Tokuyama Corporation, Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 (Japan); Yokota, Yuui; Chani, Valery; Yoshikawa, Akira [IMRAM, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan)

2011-10-01

Single-crystalline fibers were grown from 0.25, 0.70, and 1.50 mol% Pr-doped Lu{sub 3}Al{sub 5}O{sub 12} (LuAG) melts by the micro-pulling down ({mu}-PD) method with a diameter of 0.3-0.5 mm and a length of about 200 mm. They were cut to 10 mm long specimens, and their scintillation properties, including light yield and decay time profile, were examined. These results were compared with corresponding properties of the specimens (0.8x0.8x10 mm{sup 3}) cut from the bulk crystals produced by conventional Czochralski (CZ) growth. The {mu}-PD-grown fibers demonstrated relatively low light yield and had the same decay time constant when compared with those of the samples cut from the CZ-grown crystals. The fiber crystals were used to assemble scintillating arrays with dimensions of O 0.5x10 mm{sup 2}x20 pixels and O 0.3x10 mm{sup 2}x30 pixels coated by a BaSO{sub 4} reflector. After optical coupling with a position sensitive photomultiplier tube, the fiber-based arrays demonstrated acceptable imaging capability with a spatial resolution of about 0.5 mm.

Radiation damage in silicon. Defect analysis and detector properties

Energy Technology Data Exchange (ETDEWEB)

Hoenniger, F.

2008-01-15

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after {gamma}-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO{sub i}, C{sub i}O{sub i}, C{sub i}C{sub s}, VP or V{sub 2} several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO{sub 2} defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep

Radiation damage in silicon. Defect analysis and detector properties

International Nuclear Information System (INIS)

Hoenniger, F.

2008-01-01

Silicon microstrip and pixel detectors are vital sensor-components as particle tracking detectors for present as well as future high-energy physics (HEP) experiments. All experiments at the large Hadron Collider (LHC) are equipped with such detectors. Also for experiments after the upgrade of the LHC (the so-called Super-LHC), with its ten times higher luminosity, or the planned International Linear Collider (ILC) silicon tracking detectors are forseen. Close to the interaction region these detectors have to face harsh radiation fields with intensities above the presently tolerable level. defect engineering of the used material, e. g. oxygen enrichment of high resistivity float zone silicon and growing of thin low resistivityepitaxial layers on Czochralski silicon substrates has been established to improve the radiation hardness of silicon sensors. This thesis focuses mainly on the investigation of radiation induced defects and their differences observed in various kinds of epitaxial silicon material. Comparisons with other materials like float zone or Czochralski silicon are added. Deep Level Transient Spectroscopy (DLTS) and Thermally Stimulated Current (TSC) measurements have been performed after γ-, electron-, proton- and neutron-irradiation. The differenced in the formation of vacancy and interstitial related defects as well as so-called clustered regions were investigated for various types of irradiation. In addition to the well known defects VO i , C i O i , C i C s , VP or V 2 several other defect complexes have been found and investigated. Also the material dependence of the defect introduction rates and the defect annealing behavior has been studied by isothermal and isochronal annealing experiments. Especially the IO 2 defect which is an indicator for the oxygen-dimer content of the material has been investigated in detail. On the basis of radiation induced defects like the bistable donor (BD) defect and a deep acceptor, a model has been introduced to

Transmission electron microscope study of neutron irradiation-induced defects in silicon

International Nuclear Information System (INIS)

Oshima, Ryuichiro; Kawano, Tetsuya; Fujimoto, Ryoji

1994-01-01

Commercial Czochralski-grown silicon (Cz-Si) and float-zone silicon (Fz-Si) wafers were irradiated with fission neutrons at various fluences from 10 19 to 10 22 n/cm 2 at temperatures ranging from 473 K to 1043 K. The irradiation induced defect structures were examined by transmission electron microscopy and ultra high voltage electron microscopy, which were compared with Marlowe code computer simulation results. It was concluded that the vacancy-type damage structure formed at 473 K were initiated from collapse of vacancy-rich regions of cascades, while interstitial type defect clusters formed by irradiation above 673 K were associated with interstitial oxygen atoms and free interstitials which diffused out of the cascades. Complex defect structures were identified to consist of {113} and {111} planar faults by the parallel beam illumination diffraction analysis. (author)

808-nm diode-pumped continuous-wave Tm:GdVO4 laser at room temperature

Science.gov (United States)

Urata, Yoshiharu; Wada, Satoshi

2005-05-01

A high-quality gadolinium vanadate (GdVO4) crystal with 7-at. % thulium as the starting material was grown by the Czochralski technique. The measured absorption spectra exhibited sufficient absorption coefficients for laser diodes (LDs) for neodymium laser pumping: 6.0 cm^-1 for pi polarization and 6.2 cm^-1 for sigma polarization at 808 nm. Laser oscillation was carried out with single-stripe 808-nm LDs in an end-pumping configuration. A slope efficiency of 28% and a threshold of 750 mW were exhibited with respect to the absorbed pump power. An output power of 420 mW was achieved at an absorbed power of 2.4 W. It was demonstrated that Tm:GdVO4 is a useful material for 2-μm lasers, particularly in a compact LD-pumped system.

Absolute non-linear optical coefficients measurements of CsLiB 6O 10 single crystals by second harmonic generation

Science.gov (United States)

Sifi, A.; Klein, R. S.; Maillard, A.; Kugel, G. E.; Péter, A.; Polgár, K.

2003-10-01

We present absolute measurements of the effective non-linear optical coefficients deff of cesium lithium borate crystals (CsLiB 6O 10, CLBO) by second harmonic generation using a continuous Nd-YAG laser source. The experiments were carried out at room temperature, on crystals cut perpendicular to type I or type II phase matching directions, with two different crystal lengths along the propagation direction. The d36 and d14 non-linear coefficients involved in deff developments are deduced and are shown to be equal as it is predicted by the Kleinman symmetry. Two different compositions prepared by the Czochralski technique from melt with compositions of 1:1:6 and 1:1:5.5 molar ratios of Cs 2O, Li 2O and B 2O 3 are comparatively studied.

Low cost monocrystalline silicon sheet fabrication for solar cells by advanced ingot technology

Science.gov (United States)

Fiegl, G. F.; Bonora, A. C.

1980-01-01

The continuous liquid feed (CLF) Czochralski furnace and the enhanced I.D. slicing technology for the low-cost production of monocrystalline silicon sheets for solar cells are discussed. The incorporation of the CLF system is shown to improve ingot production rate significantly. As demonstrated in actual runs, higher than average solidification rates (75 to 100 mm/hr for 150 mm 1-0-0 crystals) can be achieved, when the system approaches steady-state conditions. The design characteristics of the CLF furnace are detailed, noting that it is capable of precise control of dopant impurity incorporation in the axial direction of the crystal. The crystal add-on cost is computed to be $11.88/sq m, considering a projected 1986 25-slice per cm conversion factor with an 86% crystal growth yield.

Investigating reliability attributes of silicon photovoltaic cells - An overview

Science.gov (United States)

Royal, E. L.

1982-01-01

Reliability attributes are being developed on a wide variety of advanced single-crystal silicon solar cells. Two separate investigations: cell-contact integrity (metal-to-silicon adherence), and cracked cells identified with fracture-strength-reducing flaws are discussed. In the cell-contact-integrity investigation, analysis of contact pull-strength data shows that cell types made with different metallization technologies, i.e., vacuum, plated, screen-printed and soldered, have appreciably different reliability attributes. In the second investigation, fracture strength was measured using Czochralski wafers and cells taken at various stages of processing and differences were noted. Fracture strength, which is believed to be governed by flaws introduced during wafer sawing, was observed to improve (increase) after chemical polishing and other process steps that tend to remove surface and edge flaws.

Role of electrode metallization in the performance of bulk semi-insulating InP radiation detectors

International Nuclear Information System (INIS)

Zatko, B.; Dubecky, F.; Prochazkova, O.; Necas, V.

2007-01-01

This work deals with the study of three different electrode metallizations with the aim to form a Schottky barrier contact. Electrode geometry corresponds to the requirements of digital radiography systems. As substrates bulk Liquid Encapsulated Czochralski (LEC) SI InP wafers doped with Fe and Fe+Zn are used. Results of this study show that no one of the used metallization performs as a blocking contact. However, detectors with Ti/Pt/Au metallization attained a relatively good energy resolution of 7.0 keV in full-width at half-maximum (FWHM) and the charge collection efficiency (CCE) higher than 83% for 122 keV γ-photons at 255 K. The development of SI InP radiation detectors and in particular their electrode technology is discussed in the light of observed results

Timing characteristics of Ce doped Gd{sub 3}Ga{sub 3}Al{sub 2}O{sub 12} single crystals in comparison with CsI(Tl) scintillators

Energy Technology Data Exchange (ETDEWEB)

Tyagi, M.; Singh, A.K.; Singh, S.G.; Sen, S.; Gadkari, S.C. [Technical Physics Division, Bhabha Atomic Research Centre, Mumbai, 400085 (India); Desai, V.V.; Nayak, B.K. [Nuclear Physics Division, Bhabha Atomic Research Centre, Mumbai, 400085 (India)

2015-10-15

Single crystals of Gd{sub 3}Ga{sub 3}Al{sub 2}O{sub 12}:Ce with B codopants were successfully grown using the Czochralski technique. The timing characteristics of the crystal was measured by coupling the crystal to photomultiplier tubes (PMT) or silicon photodiodes [Si(PIN)]. The two prompt γ-rays emitted in a cascade from {sup 60}Co or {sup 22}Na source were detected in coincidence using Gd{sub 3}Ga{sub 3}Al{sub 2}O{sub 12}:Ce,B crystal detectors and a BaF{sub 2} detector. The time resolution of these crystals are observed to be better than that measured for CsI:Tl crystal coupled to PMT or Si(PIN) in an identical measurement setup. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Phonon anomalies in optical spectra of LiNbO3 single crystals

Directory of Open Access Journals (Sweden)

ANDREJA VALCIC

2004-06-01

Full Text Available LiNbO3 single crystals were grown by the Czochralski technique in an air atmosphere. The critical crystal diameter Dc = 1.5 cm and the critical rate of rotation wc = 35 rpm were calculated by equations from the hydrodynamics of the melt. The domain inversion was carried out at 1430 K using a 3.75 V/cm electric field for 10 min. The obtained crystals were cut, polished and etched to determine the presence of dislocations and single domain structures. The optical properties were studied by infrared and Raman spectroscopy as a function of temperature. With decreasing temperature, an atypical behaviour of the phonon modes could be seen in the ferroelectrics LiNbO3. The obtained results are discussed and compared with published data.

Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

Science.gov (United States)

Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

2018-04-01

Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC - 2.00 eV, EC - 3.25 eV, and EC - 4.37 eV with concentrations on the order of 1016 cm-3, and a lower concentration level at EC - 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC - 0.1 - 0.2 eV and EC - 0.98 eV. There was no evidence of the commonly observed trap state at ˜EC - 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively "clean" upper part of the bandgap. However, the states at ˜EC - 0.98 eV, EC - 2.00 eV, and EC - 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.

Studies on shallow traps in Li2B4O7:Eu,Mn

International Nuclear Information System (INIS)

Drozdowski, Winicjusz; Brylew, Kamil; Kaczmarek, Sławomir M.; Piwowarska, Danuta; Nakai, Yosuke; Tsuboi, Taiju; Huang, Wei

2014-01-01

Li 2 B 4 O 7 (LTB) single crystals doped with 0.5 mol% Mn and 0.005 mol% Eu have been grown by the Czochralski method. The presence of Eu 3+ has been confirmed by photoluminescence spectra of non-irradiated crystals, whereas the presence of Mn 2+ by absorption spectra of gamma-irradiated ones, as well as by EPR measurements. Unlike in most thermoluminescence studies on pure and doped LTB, performed usually above 300 K, glow curves have been recorded between 10 and 300 K in order to focus the attention on shallow traps. A broad, intense glow peak is observed around 80 K, with three weaker peaks at 205, 255, and 280 K. Based on supplementary T max  − T stop experiments, the trap parameters have been derived assuming that the glow curve is in fact formed by a superposition of a double Gaussian band related to a quasi-continuous distribution of trapping levels, and several glow peaks produced by discrete traps. The nature of the traps is also discussed. - Highlights: • Radioluminescence spectra of LTB:Eu,Mn have been measured at various temperatures. • Glow curves of LTB:Eu,Mn have been recorded between 10 and 300 K. • Thermoluminescence studies have been extended with the T max  − T stop method. • Trap parameters related to particular glow peaks have been derived. • Besides discrete traps a quasi-continuous distribution has been found

Comparative optical study of thulium-doped YVO4 , GdVO4 , and LuVO4 single crystals

Science.gov (United States)

Lisiecki, R.; Solarz, P.; Dominiak-Dzik, G.; Ryba-Romanowski, W.; Sobczyk, M.; Černý, Pavel; Šulc, Jan; Jelínková, Helena; Urata, Yoshiharu; Higuchi, Mikio

2006-07-01

YVO4:Tm3+ crystals grown by the Czochralski technique and GdVO4:Tm3+ and LuVO4:Tm3+ crystals grown by the floating-zone technique were investigated using methods of optical spectroscopy. Polarized absorption and emission spectra were recorded at room temperature and at 6K . The crystal-field analysis was performed assuming the D2d site symmetry for Tm3+ ions. In this way the missing crystal-field components of the H63 ground multiplet were located. Room temperature absorption spectra were analyzed in the framework of the Judd-Ofelt theory. Evaluated radiative lifetimes of luminescent levels of Tm3+ follow a general trend diminishing in agreement with the sequence: YVO4:Tm3+→GdVO4:Tm3+→LuVO4:Tm3+ . Luminescence lifetimes measured for the systems under study are similar except for the F43 lifetime, which appears to be surprisingly short for LuVO4:Tm3+ . Anisotropy of optical spectra is particularly pronounced in LuVO4:Tm3+ . Peak absorption cross section for the band relevant for optical pumping at about 805nm is roughly three times higher for π polarization. Stimulated emission cross sections for the F43-H63 transition near 1800nm were evaluated using the reciprocity method. The diode-pumped continuous wave laser operation in GdVO4:Tm3+ with a slope efficiency of up to 40% is demonstrated. In LuVO4:Tm3+ the diode-pumped laser oscillation in a pulsed mode was observed.

Optical properties of LiYF4:U3+. Infrared laser use

International Nuclear Information System (INIS)

Louis, M.

1995-01-01

In this study are proposed a complete interpretation of the optical spectra of trivalent uranium in LiYF 4 (LYF). Single crystals of uranium doped LYF were grown by Czochralski method with different concentration (0.05%-0.20%). The obtained crystals have pale green color, characteristic of tetravalent uranium. The absorption spectra show that effectively only U 4+ is present in this crystal. In order to reduce the oxidation state of the U 4+ , the pale green crystal containing 0.07% of U 4+ was exposed to gamma irradiation. The sample becomes orange brown and the absorption spectrum is characteristic of U 3+ . The irradiation technology is an efficient method to convert 100% of U 4+ in U 3+ . From the analysis of the polarized optical absorption and emission spectra the spectroscopic parameters have been determined. The Judd-Ofelt theory was applied in order to simulate the intensity of the 5 f 3 →5 f 3 transitions between Stark levels of U 3+ in LYF. Because of the large crystal field splitting of the J multiplet in the actinides a set of phenomenological intensity parameters is introduced to describe the transition probabilities between crystal field sublevels. A continuous laser emission of an actinide ion at ambient temperature has been revealed. In the last part of this thesis the fundamental aspect of the energy transfer process that takes place in laser crystal LYF codoped with an 4 f element Nd 3+ and an 5 f one U 3+ has been investigated. (author). 111 refs., 69 figs., 19 tabs

An automated ion implant/pulse anneal machine for low cost silicon cell production

International Nuclear Information System (INIS)

Armini, A.J.; Bunker, S.N.; Spitzer, M.B.

1982-01-01

The continuing development of a high throughput ion implanter and a pulsed electron beam annealer designed for dedicated silicon solar cell manufacture is reviewed. This equipment is intended for production of junctions in 10 cm wide wafers at a throughput up to 10 MWsub(p) per year. The principal features of the implanter are the lack of mass analysis and defocusing utilizing electrostatic deflection. The implanted surface is annealed by liquid phase epitaxy resulting from a single burst of a large area electron beam. Cells with non-mass analyzed ion implantation have yielded AM1 cell efficiencies in excess of 15%. Pulse annealed Czochralski cells have been made with AM1 efficiencies of 13% vs. 15% for a furnace annealed group. Results of pulse annealing of polycrystalline materials indicate that cell performance comparable to diffusion can be obtained. (Auth.)

Growth, spectral properties, and laser demonstration of Nd:GYSO crystal

Science.gov (United States)

Li, D. Z.; Xu, X. D.; Cong, Z. H.; Zhang, J.; Tang, D. Y.; Zhou, D. H.; Xia, C. T.; Wu, F.; Xu, J.

2011-07-01

An Nd:GYSO crystal has been grown by the Czochralski technique. The cell parameters were analyzed with X-ray diffraction (XRD). Room-temperature absorption and fluorescence spectra and fluorescence lifetime of the Nd:GYSO crystal were measured and analyzed. The Judd-Ofelt intensity parameters Ω 2,4,6 were obtained to be 4.06, 4.65, and 3.63×10-20 cm2, respectively. The absorption and emission cross sections and the branching ratios were calculated. The peak-emission cross section is 3.8×10-20 cm2 at 1074 nm with a FWHM of 8.8 nm. Pumped by a laser diode, a maximum 1.54 W continuous-wave (CW) laser output has been obtained with a slope efficiency of 27.4%. All the results show that Nd:GYSO crystal is a promising laser material.

Influence of Li/Nb ratios on defect structure and photorefractive properties of Zn: In: Fe: LiNbO 3 crystals

Science.gov (United States)

Dai, Li; Su, Yan-Qing; Wu, Shi-Ping; Guo, Jing-Jie; Xu, Chao; Xu, Yu-Heng

2011-04-01

A series of Zn: In: Fe: LiNbO3 crystals are grown by the Czochralski technique with various ratios of Li/Nb = 0.94, 1.05, 1.20 and 1.38 in the melt. The Zn, In, Fe, Nb and Li concentrations in the crystals are analyzed by inductively coupled plasma (ICP) spectrometry. The results indicate that with increasing the [Li]/[Nb] ratio in melt, [Li]/[Nb] ratio increases and goes up continuously in the crystal, the segregation coefficients of both Zn and In ions decrease. The absorption spectra measurement and two-wave coupling experiment are employed to study the effect of [Li]/[Nb] ratio on photorefractive properties of Zn: In: Fe: LiNbO3 crystals. It is found that the [Li]/[Nb] ratio increases, the write time is shortened and the photorefractive sensitivity is improved.

Fundamental Research and Development for Improved Crystalline Silicon Solar Cells: Final Subcontract Report, March 2002 - July 2006

Energy Technology Data Exchange (ETDEWEB)

Rohatgi, A.

2007-11-01

This report summarizes the progress made by Georgia Tech in the 2002-2006 period toward high-efficiency, low-cost crystalline silicon solar cells. This program emphasize fundamental and applied research on commercial substrates and manufacturable technologies. A combination of material characterization, device modeling, technology development, and complete cell fabrication were used to accomplish the goals of this program. This report is divided into five sections that summarize our work on i) PECVD SiN-induced defect passivation (Sections 1 and 2); ii) the effect of material inhomogeneity on the performance of mc-Si solar cells (Section 3); iii) a comparison of light-induced degradation in commercially grown Ga- and B-doped Czochralski Si ingots (Section 4); and iv) the understanding of the formation of high-quality thick-film Ag contacts on high sheet-resistance emitters (Section 5).

Mechanisms limiting the performance of large grain polycrystalline silicon solar cells

Science.gov (United States)

Culik, J. S.; Alexander, P.; Dumas, K. A.; Wohlgemuth, J. W.

1984-01-01

The open-circuit voltage and short-circuit current of large-grain (1 to 10 mm grain diameter) polycrystalline silicon solar cells is determined by the minority-carrier diffusion length within the bulk of the grains. This was demonstrated by irradiating polycrystalline and single-crystal (Czochralski) silicon solar cells with 1 MeV electrons to reduce their bulk lifetime. The variation of short-circuit current with minority-carrier diffusion length for the polycrystalline solar cells is identical to that of the single-crystal solar cells. The open-circuit voltage versus short-circuit current characteristic of the polycrystalline solar cells for reduced diffusion lengths is also identical to that of the single-crystal solar cells. The open-circuit voltage of the polycrystalline solar cells is a strong function of quasi-neutral (bulk) recombination, and is reduced only slightly, if at all, by grain-boundary recombination.

Study on cobalt oxide; Sanka kobaruto ni kansuru kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

1996-11-28

This is No.91 report of National Institute for Research in Inorganic Materials, concerning cobalt oxide. For the growth of single crystal by the Czochralski method, shape of interface and contamination of impurities are affected by the convection of molten liquid in the atmosphere. Various oxides besides CoO were investigated. Solid solutions of Cr2O3 and Al2O3 into CoO were also studied. Non-linear optic and dielectric properties of single crystals, such as Ba2NaNb5O15 and LiNbO3, were examined. It was considered that the positive electron having positive electric charge can be used for the study on the negative electric charge defect in materials. However, the positive electron itself is rare, which results in the too low efficiency of measurement. Efficiency improvement of 50 times was achieved by introducing a high performance 2D position detector, which was still low efficiency of one-hundredth compared with photoelectron spectroscopy. It was found that the aggregation structure of positive ion defects in CoO is a misunderstanding of phenomenon caused by the electronic state in bulk crystals. As a result of the study on the optical properties of f-electron transition metals, transparent ceramics with addition of various rare earth ions were described. 162 refs., 106 figs., 14 tabs.

Ion channeling

International Nuclear Information System (INIS)

Erramli, H.; Blondiaux, G.

1994-01-01

Channeling phenomenon was predicted, many years ago, by stark. The first channeling experiments were performed in 1963 by Davies and his coworkers. Parallely Robinson and Oen have investigated this process by simulating trajectories of ions in monocrystals. This technique has been combined with many methods like Rutherford Backscattering Spectrometry (R.B.S.), Particles Induced X-rays Emission (P.I.X.E) and online Nuclear Reaction (N.R.A.) to localize trace elements in the crystal or to determine crystalline quality. To use channeling for material characterization we need data about the stopping power of the incident particle in the channeled direction. The ratios of channeled to random stopping powers of silicon for irradiation in the direction have been investigated and compared to the available theoretical results. We describe few applications of ion channeling in the field of materials characterization. Special attention is given to ion channeling combined with Charged Particle Activation Analysis (C.P.A.A.) for studying the behaviour of oxygen atoms in Czochralski silicon lattices under the influence of internal gettering and in different gaseous atmospheres. Association between ion channeling and C.P.A.A was also utilised for studying the influence of the growing conditions on concentration and position of carbon atoms at trace levels in the MOVPE Ga sub (1-x) Al sub x lattice. 6 figs., 1 tab., 32 refs. (author)

Growth and laser characterization of mixed Nd:Lu xGd 1-xVO 4 laser crystals

Science.gov (United States)

Yu, Haohai; Yu, Yonggui; Zhang, Huaijin; Wang, Zhengping; Wang, Jiyang; Cheng, Xiufeng; Shao, Zongshu; Jiang, Minhua

2006-08-01

A new series Nd:Lu xGd 1-xVO 4 ( x=0.14, 0.32, 0.50, 0.61, 0.70 and 0.80) mixed laser crystals have been successfully grown by the Czochralski method. The X-ray powder diffraction (XRPD) analysis shows that the as-grown mixed crystals possess the ZrSiO 4 structure. The cell parameters are found to decrease with an increase of x. The optical absorption spectra of the mixed crystals have been measured at room temperature, and five strong-absorption bands centered at the wavelengths of 531, 594, 752, 807 and 880 nm have been revealed in all crystals. They are assigned to the different spin- and electric-dipole-allowed transition from the ground state to the 2K 13/2+ 4G 7/2+ 4G 9/2, 4G 5/2+ 2G 7/2, 4F 7/2+ 4S 3/2, 4F 5/2+ 2H 9/2 and 4F 3/2 energy levels, respectively. A continuous-wave (CW) laser output has been achieved with the mixed crystals at 1.06 μm under laser diode pumping. The maximum CW output power of 377.4 mW has been obtained with the pump power of 2 W, and the corresponding optical conversion efficiency is 18.8%.

Increasing the radiation resistance of single-crystal silicon epitaxial layers

Directory of Open Access Journals (Sweden)

Kurmashev Sh. D.

2014-12-01

Full Text Available The authors investigate the possibility of increasing the radiation resistance of silicon epitaxial layers by creating radiation defects sinks in the form of dislocation networks of the density of 109—1012 m–2. Such networks are created before the epitaxial layer is applied on the front surface of the silicon substrate by its preliminary oxidation and subsequent etching of the oxide layer. The substrates were silicon wafers KEF-4.5 and KDB-10 with a diameter of about 40 mm, grown by the Czochralski method. Irradiation of the samples was carried out using electron linear accelerator "Electronics" (ЭЛУ-4. Energy of the particles was 2,3—3,0 MeV, radiation dose 1015—1020 m–2, electron beam current 2 mA/m2. It is shown that in structures containing dislocation networks, irradiation results in reduction of the reverse currents by 5—8 times and of the density of defects by 5—10 times, while the mobility of the charge carriers is increased by 1,2 times. Wafer yield for operation under radiation exposure, when the semiconductor structures are formed in the optimal mode, is increased by 7—10% compared to the structures without dislocation networks. The results obtained can be used in manufacturing technology for radiation-resistant integrated circuits (bipolar, CMOS, BiCMOS, etc..

crystal

Science.gov (United States)

Yu, Yi; Huang, Yisheng; Zhang, Lizhen; Lin, Zhoubin; Sun, Shijia; Wang, Guofu

2014-07-01

A Nd3+:Na2La4(WO4)7 crystal with dimensions of ϕ 17 × 30 mm3 was grown by the Czochralski method. The thermal expansion coefficients of Nd3+:Na2La4(WO4)7 crystal are 1.32 × 10-5 K-1 along c-axis and 1.23 × 10-5 K-1 along a-axis, respectively. The spectroscopic characteristics of Nd3+:Na2La4(WO4)7 crystal were investigated. The Judd-Ofelt theory was applied to calculate the spectral parameters. The absorption cross sections at 805 nm are 2.17 × 10-20 cm2 with a full width at half maximum (FWHM) of 15 nm for π-polarization, and 2.29 × 10-20 cm2 with a FWHM of 14 nm for σ-polarization. The emission cross sections are 3.19 × 10-20 cm2 for σ-polarization and 2.67 × 10-20 cm2 for π-polarization at 1,064 nm. The fluorescence quantum efficiency is 67 %. The quasi-cw laser of Nd3+:Na2La4(WO4)7 crystal was performed. The maximum output power is 80 mW. The slope efficiency is 7.12 %. The results suggest Nd3+:Na2La4(WO4)7 crystal as a promising laser crystal fit for laser diode pumping.

Structural and optical properties of a NaCl single crystal doped with CuO nanocrystals

International Nuclear Information System (INIS)

Addala, S.; Bouhdjer, L.; Halimi, O.; Boudine, B.; Sebais, M.; Chala, A.; Bouhdjar, A.

2013-01-01

A cupric oxide (CuO) nanocrystal-doped NaCl single crystal and a pure NaCl single crystal are grown by using the Czochralski (Cz) method. A number of techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, Fourier transform infrared (FT-IR) spectroscopy, Raman spectroscopy, optical absorption in the UV—visible range, and photoluminescence (PL) spectroscopy are used to characterize the obtained NaCl and NaCl:CuO crystals. It is observed that the average radius of CuO crystallites in NaCl:CuO crystal is about 29.87 nm, as derived from the XRD data analysis. Moreover, FT-IR and Raman spectroscopy results confirm the existence of the monoclinic CuO phase in NaCl crystal. UV—visible absorption measurements indicate that the band gap of the NaCl:CuO crystal is 434 nm (2.85 eV), and it shows a significant amount of blue-shift (ΔE g = 1 eV) in the band gap energy of CuO, which is due to the quantum confinement effect exerted by the CuO nanocrystals. The PL spectrum of the NaCl:CuO shows a broad emission band centred at around 438 nm, which is consistent with the absorption measurement. (interdisciplinary physics and related areas of science and technology)

Optical properties of pure and Ce3+ doped gadolinium gallium garnet crystals and epitaxial layers

International Nuclear Information System (INIS)

Syvorotka, I.I.; Sugak, D.; Wierzbicka, A.; Wittlin, A.; Przybylińska, H.; Barzowska, J.; Barcz, A.; Berkowski, M.; Domagała, J.; Mahlik, S.; Grinberg, M.; Ma, Chong-Geng

2015-01-01

Results of X-ray diffraction and low temperature optical absorption measurements of cerium doped gadolinium gallium garnet single crystals and epitaxial layers are reported. In the region of intra-configurational 4f–4f transitions the spectra of the bulk crystals exhibit the signatures of several different Ce 3+ related centers. Apart from the dominant center, associated with Ce substituting gadolinium, at least three other centers are found, some of them attributed to the so-called antisite locations of rare-earth ions in the garnet host, i.e., in the Ga positions. X-ray diffraction data prove lattice expansion of bulk GGG crystals due to the presence of rare-earth antisites. The concentration of the additional Ce-related centers in epitaxial layers is much lower than in the bulk crystals. However, the Ce-doped layers incorporate a large amount of Pb from flux, which is the most probable source of nonradiative quenching of Ce luminescence, not observed in crystals grown by the Czochralski method. - Highlights: • Ce 3+ multicenters found in Gadolinium Gallium Garnet crystals and epitaxial layers. • High quality epitaxial layers of pure and Ce-doped GGG were grown. • Luminescence quenching of Ce 3+ by Pb ions from flux detected in GGG epitaxial layers. • X-ray diffraction allows measuring the amount of the rare-earth antisites in GGG

Achievement Report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Development of technology to manufacture high quality solar cell silicon substrates; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Kohinshitsu taiyo denchiyo silicon kiban seizo gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

It is intended to establish an energy saving type mass production technology to manufacture solar cell substrates by using the electromagnetic casting process. This paper describes the achievements in fiscal 1997. Preliminary experiments were performed for high-performance slicing processing and post-slicing rinsing to reduce the cost by enhancing productivity in the slicing process. Since there is a problem of mixing of contaminating raw materials due to diversification in raw materials, resistance and impurity concentration must be determined on each raw material as the materials for the Czochralski method. Then, the raw materials are sorted out referring to the determination results, and they can be used for the electromagnetic casting process upon optimizing them. As a result of having sliced an ingot of 15-cm square with a length of 40 cm by using a mass-production wire saw, an accuracy of 22.8 {mu}m was attained as intra-face variance when the required cutting time was 476 minutes and the substrate thickness is 348 {mu}, thus having obtained prospect for achieving the standard. Development was made on a water jetting rough cleaning machine to separate and remove slurries (oil and grinding particles) from the substrates after slicing, and an arm robot to accommodate substrates into cassettes, which provided processing velocity of 9 second per substrate. A problem of raising the speed remains to be solved. (NEDO)

A New Understanding of Near-Threshold Damage for 200 keV Irradiation In Silicon

International Nuclear Information System (INIS)

Stoddard, Nathan; Duscher, Gerd J.M.; Windl, Wolfgang; Rozgonyi, G.A.

2005-01-01

Recently we reported room temperature point defect creation and subsequent extended defect nucleation in nitrogen-doped silicon during 200 kV electron irradiation, while identical irradiation of nitrogen-free silicon produced no effect. In this paper, first principles calculations are combined with new transmission electron microscope (TEM) observations to support a new model for elastic electron-silicon interactions in the TEM, which encompasses both nitrogen doped and nitrogen free silicon. Specifically, the nudged elastic band method was used to study the energetics along the diffusion path during an electron collision event in the vicinity of a nitrogen pair. It was found that the 0 K estimate for the energy barrier of a knock-on event is lowered from ∼12 to 6.2 eV. However, this is still inadequate to explain the observations. We therefore propose an increase in the energy barrier for Frenkel pair recombination associated with N 2 -V bonding. Concerning pure silicon, stacking fault formation near irradiation-induced holes demonstrates the participation of bulk processes. In low oxygen float zone material, 2--5 nm voids were formed, while oxygen precipitation in Czochralski Si has been verified by electron energy-loss spectroscopy. Models of irradiation-induced point defect aggregation are presented and it is concluded that these must be bulk and not surface mediated phenomena.

Defect characterization in high-purity silicon after γ- and hadron irradiation

International Nuclear Information System (INIS)

Stahl, J.

2004-07-01

The challenge for silicon particle detectors in future high energy physics experiments caused by extreme radiation fields can only be met by an appropriate defect engineering of the starting material. Appreciable improvements had already been obtained by enriching high resistivity float zone silicon with oxygen as demonstrated by the CERN RD48 collaboration. This thesis will focus on the difference observed after irradiation between standard and oxygenated float zone and detector grade Czochralski silicon. Results obtained with diodes manufactured on epitaxial layers are also included, envisioning effects arising from the possible migration of impurities during the crystal growth from the oxygen rich Czochralski substrate. Deep level transient spectroscopy (DLTS) and thermally stimulated current (TSC) measurements have been performed for defect characterization after γ- and hadron irradiation. Also a new high resolution DLTS technique has been used for the first time to separate defect levels with similar parameters. During the microscopic studies additionally to the well known defects like VO i , V 2 , C i O i or VP, four new radiation induced defects have been discovered and characterized. Two of these defects are closely correlated with the detector performance: A deep acceptor labeled as I-defect, and a bistable donor (BD). The formation of the I-defect is strongly suppressed in oxygen rich materials, while the formation of the BD is suppressed in oxygen lean material. With their properties the I- and the BD-defect are able to explain the different macroscopic behavior of standard and oxygen enriched float zone silicon after γ-irradiation. Furthermore, the BD defect is most probably responsible for the observation that in Cz and Epi diodes space charge sign inversion does not occur even after high fluences of proton irradiation. Additionally the γ-irradiated diodes were annealed at temperatures between 100 C and 350 C. During these studies some new reaction

International Conference eXtended Discretization MethodS

CERN Document Server

Benvenuti, Elena

2016-01-01

This book gathers selected contributions on emerging research work presented at the International Conference eXtended Discretization MethodS (X-DMS), held in Ferrara in September 2015. It highlights the most relevant advances made at the international level in the context of expanding classical discretization methods, like finite elements, to the numerical analysis of a variety of physical problems. The improvements are intended to achieve higher computational efficiency and to account for special features of the solution directly in the approximation space and/or in the discretization procedure. The methods described include, among others, partition of unity methods (meshfree, XFEM, GFEM), virtual element methods, fictitious domain methods, and special techniques for static and evolving interfaces. The uniting feature of all contributions is the direct link between computational methodologies and their application to different engineering areas.

Positron annihilation spectroscopy in defects of semiconductors

International Nuclear Information System (INIS)

Fujinami, Masanori

2002-01-01

Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 18 cm -3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 15 cm -2 ) silicon and oxygen-implanted (180 keV, 2x10 15 cm -2 ) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V 6 O 2 at 600degC and V 10 O 6 at 800degC. (S.Y.)

Temperature fluctuations in a LiNbO 3 melt during crystal growth

Science.gov (United States)

Suzuki, Tetsuro

2004-10-01

Variations in temperature induced by forced convection on the surface of a LiNbO3 melt during crystal growth have been studied. Temperature measurements on the melt surface of single crystals growing (∅ 50 mm) at rotation rates of 15-40 rpm on an RF-heated Czochralski puller has revealed that the melt surface continuously alternates between a steady and unsteady state of flow. This was attributed to the intermittently turbulent flow mode at intermediate rotation rates. The fluctuation period is thought to depend on the thickness of its boundary layer. The boundary layer varies in thickness due to the melt flow, which stops as the interface moves toward the crystal and resumes once the interface reverts to its former position. By contrast, at above 60 rpm, the melt surface temperature drops without fluctuation, indicating that turbulent flow is dominant at faster rotation rates.

Crystal growth, spectral properties, and laser demonstration of laser crystal Nd:LYSO

Science.gov (United States)

Li, D. Z.; Xu, X. D.; Zhou, D. H.; Zhuang, S. D.; Wang, Z. P.; Xia, C. T.; Wu, F.; Xu, J.

2010-11-01

A Nd:LYSO crystal has been grown by the Czochralski technique. The cell parameters were analyzed with X-ray diffraction (XRD). The Judd-Ofelt intense parameters Ω2,4,6 were obtained to be 2.65, 5.75, and 7.37×10-20 cm2, respectively. The absorption and emission cross sections and the branching ratios were calculated. The large absorption cross section (6.14×10-20 cm2) and broad absorption band (5 nm) around 811 nm indicate that this crystal can be pumped efficiently by laser diodes. The broad emission band from the 4F3/2 multiplet shows that the crystal is a promising medium for ultrashort pulse lasers. Pumped by a laser diode, the maximum 814 mW continuous-wave laser output has been obtained with a slope efficiency of 28.9%. All the results show that this crystal is a promising laser material.

Crystal growth, spectral properties, and laser demonstration of laser crystal Nd:LYSO

International Nuclear Information System (INIS)

Li, D Z; Xu, X D; Zhou, D H; Xia, C T; Wu, F; Zhuang, S D; Wang, Z P; Xu, J

2010-01-01

A Nd:LYSO crystal has been grown by the Czochralski technique. The cell parameters were analyzed with X-ray diffraction (XRD). The Judd-Ofelt intense parameters Ω 2,4,6 were obtained to be 2.65, 5.75, and 7.37×10 -20 cm 2 , respectively. The absorption and emission cross sections and the branching ratios were calculated. The large absorption cross section (6.14×10 -20 cm 2 ) and broad absorption band (5 nm) around 811 nm indicate that this crystal can be pumped efficiently by laser diodes. The broad emission band from the 4 F 3/2 multiplet shows that the crystal is a promising medium for ultrashort pulse lasers. Pumped by a laser diode, the maximum 814 mW continuous-wave laser output has been obtained with a slope efficiency of 28.9%. All the results show that this crystal is a promising laser material

Spin-dependent recombination involving oxygen-vacancy complexes in silicon

Science.gov (United States)

Franke, David P.; Hoehne, Felix; Vlasenko, Leonid S.; Itoh, Kohei M.; Brandt, Martin S.

2014-05-01

Spin-dependent relaxation and recombination processes in γ-irradiated n-type Czochralski-grown silicon are studied using continuous wave (cw) and pulsed electrically detected magnetic resonance (EDMR). Two processes involving the SL1 center, the neutral excited triplet state of the oxygen-vacancy complex, are observed which can be separated by their different dynamics. One of the processes is the relaxation of the excited SL1 state to the ground state of the oxygen-vacancy complex, the other a charge transfer between 31P donors and SL1 centers forming close pairs, as indicated by electrically detected electron double resonance. For both processes, the recombination dynamics is studied with pulsed EDMR techniques. We demonstrate the feasibility of true zero-field cw and pulsed EDMR for spin-1 systems and use this to measure the lifetimes of the different spin states of SL1 also at vanishing external magnetic field.

Heat and mass transfer in semiconductor melts during single-crystal growth processes

Science.gov (United States)

Kakimoto, Koichi

1995-03-01

The quality of large semiconductor crystals grown from melts is significantly affected by the heat and mass transfer in the melts. The current understanding of the phenomena, especially melt convection, is reviewed starting from the results of visualization using model fluids or silicon melt, and continuing to the detailed numerical calculations needed for quantitative modeling of processing with solidification. The characteristics of silicon flows are also reviewed by focusing on the Coriolis force in the rotating melt. Descriptions of flow instabilities are included that show the level of understanding of melt convection with a low Prandtl number. Based on hydrodynamics, the origin of the silicon flow structure is reviewed, and it is discussed whether silicon flow is completely turbulent or has an ordered structure. The phase transition from axisymmetric to nonaxisymmetric flow is discussed using different geometries. Additionally, surface-tension-driven flow is reviewed for Czochralski crystal growth systems.

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

CERN Document Server

Fretwurst, E.; Stahl, J.; Pintilie, I.

2002-01-01

The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also studied and first promising re...

Effects of recoil-implanted oxygen on depth profiles of defects and annealing processes in P{sup +}-implanted Si studied using monoenergetic positron beams

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Moriya, Tsuyoshi; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Kitano, Tomohisa; Watanabe, Masahito; Kawano, Takao; Suzuki, Ryoichi; Ohdaira, Toshiyuki; Mikado, Tomohisa

1996-04-01

Effects of oxygen atoms recoiled from SiO{sub 2} films on depth profiles of defects and annealing processes in P{sup +}-implanted Si were studied using monoenergetic positron beams. For an epitaxial Si specimen, the depth profile of defects was found to be shifted toward the surface by recoil implantation of oxygen atoms. This was attributed to the formation of vacancy-oxygen complexes and a resultant decrease in the diffusion length of vacancy-type defects. The recoiled oxygen atoms stabilized amorphous regions introduced by P{sup +}-implantation, and the annealing of these regions was observed after rapid thermal annealing (RTA) at 700degC. For a Czochralski-grown Si specimen fabricated by through-oxide implantation, the recoiled oxygen atoms introduced interstitial-type defects upon RTA below the SiO{sub 2}/Si interface, and such defects were dissociated by annealing at 1000degC. (author)

Numerical investigation of magnetic field effect on pressure in cylindrical and hemispherical silicon CZ crystal growth

International Nuclear Information System (INIS)

Mokhtari, F.; Bouabdallah, A.; Merah, A.; Oualli, H.

2012-01-01

The effect of axial magnetic field of different intensities on pressure in silicon Czochralski crystal growth is investigated in cylindrical and hemispherical geometries with rotating crystal and crucible and thermocapillary convection. As one important thermodynamic variable, the pressure is found to be more sensitive than temperature to magnetic field with strong dependence upon the vorticity field. The pressure at the triple point is proposed as a convenient parameter to control the homogeneity of the grown crystal. With a gradual increase of the magnetic field intensity the convection effect can be reduced without thermal fluctuations in the silicon melt. An evaluation of the magnetic interaction parameter critical value corresponding to flow, pressure and temperature homogenization leads to the important result that a relatively low axial magnetic field is required for the spherical system comparatively to the cylindrical one. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Numerical investigation of magnetic field effect on pressure in cylindrical and hemispherical silicon CZ crystal growth

Energy Technology Data Exchange (ETDEWEB)

Mokhtari, F. [Universite Mouloud Mammeri de Tizi Ouzou (Algeria); LTSE Laboratory, University of Science and Technology. BP 32 Elalia, Babezzouar, Algiers (Algeria); Bouabdallah, A. [LTSE Laboratory, University of Science and Technology. BP 32 Elalia, Babezzouar, Algiers (Algeria); Merah, A. [LTSE Laboratory, University of Science and Technology. BP 32 Elalia, Babezzouar, Algiers (Algeria); M' hamed Bougara University, Boumerdes (Algeria); Oualli, H. [EMP, Bordj ElBahri, Algiers (Algeria)

2012-12-15

The effect of axial magnetic field of different intensities on pressure in silicon Czochralski crystal growth is investigated in cylindrical and hemispherical geometries with rotating crystal and crucible and thermocapillary convection. As one important thermodynamic variable, the pressure is found to be more sensitive than temperature to magnetic field with strong dependence upon the vorticity field. The pressure at the triple point is proposed as a convenient parameter to control the homogeneity of the grown crystal. With a gradual increase of the magnetic field intensity the convection effect can be reduced without thermal fluctuations in the silicon melt. An evaluation of the magnetic interaction parameter critical value corresponding to flow, pressure and temperature homogenization leads to the important result that a relatively low axial magnetic field is required for the spherical system comparatively to the cylindrical one. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Paramagnetic resonance and susceptibility of ilmenite, FeTiO3 crystal

Science.gov (United States)

Mcdonald, P. F.; Parasiris, A.; Pandey, R. K.; Gries, B. L.; Kirk, W. P.

1991-01-01

Large high-purity single crystals of FeTiO3 with ilmenite structure have been grown from a stoichiometric melt of Fe2O3 and TiO2 under an inert atmosphere using the modified Czochralski technique. Susceptibility and X-band paramagnetic resonance studies have been performed. Susceptibility measurements indicate a Neel temperature of about 59 K. The paramagnetic resonance spectrum for magnetic field perpendicular to the crystal c axis consists of a portion of a single, very intense approximately Lorentzian absorption line with its peak at about 600 G and half width at half maximum almost 1200 G. The absorption extends to zero magnetic field. For magnetic field approximately parallel to the c axis, the paramagnetic absorption is much smaller and may be considered a superposition of two approximately Lorentzian line shapes. The magnetic resonance measurements indicate a weak temperature dependence and large angular anisotropy.

Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

Science.gov (United States)

Ho, C.-T.

1982-01-01

The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

Space charge sign inversion and electric field reconstruction in 24 GeV/c proton-irradiated MCZ Si p+-n(TD)-n+ detectors processed via thermal donor introduction

International Nuclear Information System (INIS)

Li, Z.; Verbitskaya, E.; Carini, G.; Chen, W.; Eremin, V.; Gul, R.; Haerkoenen, J.; Li, M.

2009-01-01

The aim of this study is the evaluation of radiation effects in detectors based on p-type magnetic czochralski (MCZ) Si that was converted to n-type by thermal donor (TD) introduction. As-processed p + -p-n + detectors were annealed at 430 deg. C resulting in p + -n(TD)-n + structures. The space charge sign and the electric field distribution E(x) in MCz Si p + -n(TD)-n + detectors irradiated by 24 GeV/c protons were analyzed using the data on the current pulse response and the Double Peak (DP) electric field distribution model for heavily irradiated detectors. The approach considers an irradiated detector as a structure with three regions in which the electric field depends on the coordinate, and the induced current pulse response arises from the drift process of free carriers in the detector with variable electric field. Reconstruction of the E(x) profile from the pulse response shapes is performed employing a new method for DP electric field reconstruction. This method includes: (a) a direct extraction of charge loss due to trapping and (b) the fitting of a simulated pulse response to the 'corrected' pulse by adjusting the electric field profiles in the three regions. Reconstruction of E(x) distribution showed that in the diodes irradiated by a proton fluence of (2-4)x10 14 p/cm 2 space charge sign inversion has occurred. This is the evidence that the influence of 24 GeV/c proton radiation on MCz Si p + -n(TD)-n + detectors is similar to that on p + -n-n + detectors based on FZ or diffusion oxygenated n-type Si.

Method

Directory of Open Access Journals (Sweden)

Ling Fiona W.M.

2017-01-01

Full Text Available Rapid prototyping of microchannel gain lots of attention from researchers along with the rapid development of microfluidic technology. The conventional methods carried few disadvantages such as high cost, time consuming, required high operating pressure and temperature and involve expertise in operating the equipment. In this work, new method adapting xurography method is introduced to replace the conventional method of fabrication of microchannels. The novelty in this study is replacing the adhesion film with clear plastic film which was used to cut the design of the microchannel as the material is more suitable for fabricating more complex microchannel design. The microchannel was then mold using polymethyldisiloxane (PDMS and bonded with a clean glass to produce a close microchannel. The microchannel produced had a clean edge indicating good master mold was produced using the cutting plotter and the bonding between the PDMS and glass was good where no leakage was observed. The materials used in this method is cheap and the total time consumed is less than 5 hours where this method is suitable for rapid prototyping of microchannel.

Method Points: towards a metric for method complexity

Directory of Open Access Journals (Sweden)

Graham McLeod

1998-11-01

Full Text Available A metric for method complexity is proposed as an aid to choosing between competing methods, as well as in validating the effects of method integration or the products of method engineering work. It is based upon a generic method representation model previously developed by the author and adaptation of concepts used in the popular Function Point metric for system size. The proposed technique is illustrated by comparing two popular I.E. deliverables with counterparts in the object oriented Unified Modeling Language (UML. The paper recommends ways to improve the practical adoption of new methods.

BDF-methods

DEFF Research Database (Denmark)

Hostrup, Astrid Kuijers

1999-01-01

An introduction to BDF-methods is given. The use of these methods on differential algebraic equations (DAE's) with different indexes with respect to order, stability and convergens of the BDF-methods is presented.......An introduction to BDF-methods is given. The use of these methods on differential algebraic equations (DAE's) with different indexes with respect to order, stability and convergens of the BDF-methods is presented....

Methods for evaluating imaging methods of limited reproducibility

International Nuclear Information System (INIS)

Krummenauer, F.

2005-01-01

Just like new drugs, new or modified imaging methods must be subjected to objective clinical tests, including tests on humans. In this, it must be ensured that the principle of Good Clinical Practice (GCP) are followed with regard to medical, administrative and methodical quality. Innovative methods fo clinical epidemiology and medical biometry should be applied from the planning stage to the final statistical evaluation. The author presents established and new methods for planning, evaluation and reporting of clinical tests of diagnostic methods, and especially imaging methods, in clinical medicine and illustrates these by means of current research projects in the various medical disciplines. The strategies presented are summarized in a recommendation based on the concept of phases I - IV of clinical drug testing in order to enable standardisation of the clinical evaluation of imaging methods. (orig.)

Distillation methods

International Nuclear Information System (INIS)

Konecny, C.

1975-01-01

Two main methods of separation using the distillation method are given and evaluated, namely evaporation and distillation in carrier gas flow. Two basic apparatus are described for illustrating the methods used. The use of the distillation method in radiochemistry is documented by a number of examples of the separation of elements in elemental state, volatile halogenides and oxides. Tables give a survey of distillation methods used for the separation of the individual elements and give conditions under which this separation takes place. The suitability of the use of distillation methods in radiochemistry is discussed with regard to other separation methods. (L.K.)

Structural, mechanical and light yield characterisation of heat treated LYSO:Ce single crystals for medical imaging applications

Energy Technology Data Exchange (ETDEWEB)

Mengucci, P., E-mail: p.mengucci@univpm.it [Università Politecnica delle Marche, Via Brecce Bianche, 60131 Ancona (Italy); André, G. [Laboratoire Léon Brillouin, CEA-CNRS, CE-Saclay, 91191 Gif sur Yvette cedex (France); Auffray, E. [Department PH-CMX CERN, Route de Meyrin, 1211 Geneva 23 (Switzerland); Barucca, G. [Università Politecnica delle Marche, Via Brecce Bianche, 60131 Ancona (Italy); Cecchi, C. [Dipartimento di Fisica e Geologia, Università di Perugia, Via A. Pascoli, 06123 Perugia (Italy); Chipaux, R. [CEA DSM/IRFU/SEDI, CE-Saclay, 91191 Gif sur Yvette cedex (France); Cousson, A. [Laboratoire Léon Brillouin, CEA-CNRS, CE-Saclay, 91191 Gif sur Yvette cedex (France); Davì, F. [Università Politecnica delle Marche, Via Brecce Bianche, 60131 Ancona (Italy); Di Vara, N. [Department PH-CMX CERN, Route de Meyrin, 1211 Geneva 23 (Switzerland); Rinaldi, D.; Santecchia, E. [Università Politecnica delle Marche, Via Brecce Bianche, 60131 Ancona (Italy)

2015-06-11

Five single crystals of cerium-doped lutetium yttrium oxyorthosilicate (LYSO:Ce) grown by the Czochralski method were submitted to structural characterisation by X-ray (XRD) and neutron (ND) diffraction, scanning (SEM) and transmission (TEM) electron microscopy and energy dispersive microanalysis (EDS). The Ultimate Tensile Strength (UTS), the Young Modulus (YM) and the Light Yield (LY) of the samples were also measured in order to correlate the mechanical and the optical behaviour of the crystals with the characteristics of their microstructure. Two of the samples analysed were also heat treated at 300 °C for 10 h to evidence possible variations induced by the temperature in the optical and mechanical response of the crystals. Results showed that the mean compositional variations evidenced by the structural analyses do not affect the mechanical and optical behaviour of the samples. On the contrary, the thermal treatment could induce the formation of coherent spherical particles (size 10 to 15 nm), not uniformly distributed inside the sample, that strongly reduce the UTS and YM values, but it does not affect the optical response of the crystal. This latter result was attributed to the low value of the heating temperature (300 °C) that is not sufficiently high to induce annealing of the oxygen vacancies traps that are responsible of the deterioration of the scintillation properties of the LYSO:Ce crystals. This study was carried out in the framework of the Crystal Clear Collaboration (CCC)

Planar silicon sensors for the CMS Tracker upgrade

CERN Document Server

Junkes, Alexandra

2013-01-01

The CMS tracker collaboration has initiated a large material investigation and irradiation campaign to identify the silicon material and design that fulfills all requirements for detectors for the high-luminosity phase of the Large Hadron Collider (HL-LHC).A variety of silicon p-in-n and n-in-p test-sensors made from Float Zone, Deep-Diffused FZ and Magnetic Czochralski materials were manufactured by one single industrial producer, thus guaranteeing similar conditions for the production and design of the test-structures. Properties of different silicon materials and design choices have been systematically studied and compared.The samples have been irradiated with 1 MeV neutrons and protons corresponding to maximal fluences as expected for the positions of detector layers in the future tracker. Irradiations with protons of different energies (23 MeV and 23 GeV) have been performed to evaluate the energy dependence of the defect generation in oxygen rich material. All materials have been characterized before an...

Conventional and Synchrotron X-Ray Topography of Defects in the Core Region of SrLaGaO4

International Nuclear Information System (INIS)

Malinowska, A.; Lefeld-Sosnowska, M.; Wieteska, K.; Wierzchowski, W.; Pajaczkowska, A.; Graeff, W.

2008-01-01

SrLaGaO 4 single crystals are perspective substrate materials for high temperature superconductors thin films, elements of thermal radiation receivers and other electronic devices. The defect structure of the Czochralski grown SrLaGaO 4 crystal was investigated by means of X-ray topography exploring both conventional and synchrotron sources. The crystal lattice defects in the core region of the crystal were investigated. The regular network of defects arranged in rows only in direction was observed. Owing to high resolution of synchrotron radiation white beam back reflection topographs one can distinguish individual spots forming the lines of the rows. It can be supposed that these elongated rod-like volume defects are located in f100g lattice planes forming a kind of walls. They are built approximately of the same phase as crystal but crystallize at a different moment than a rest of the crystal due to the constitutional supercooling. (authors)

Elastic scattering of gamma radiation in solids

International Nuclear Information System (INIS)

Goncalves, O.D.

1987-01-01

The elastic scattering of gamma rays in solids is studied: Rayleigh scattering as well as Bragg scattering in Laue geometries. We measured Rayleigh cross sections for U, Pb, Pt, W, Sn, Ag, Mo, Cd, Zn, and Cu with gamma energies ranging from 60 to 660 KeV and angles between 5 0 and 140 0 . The experimental data are compared with form factor theories and second order perturbation theories and the limits of validity of both are established. In the 60 KeV experiment, a competition between Rayleigh and Bragg effects is found in the region of low momentum transfer. The Bragg experiments were performed using the gamma ray diffractometer from the Hahn-Meitner Institut (Berlin) with gammas of 317 KeV and angles up to 2 0 . In particular, we studied the effect of annealing in nearly perfect Czochralski Silicon crystals with high perfection in the crystallographic structure. The results are compared with Kinematical and Dynamical theories. (author)

Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells

International Nuclear Information System (INIS)

Arafune, K.; Sasaki, T.; Wakabayashi, F.; Terada, Y.; Ohshita, Y.; Yamaguchi, M.

2006-01-01

We focused on the defects and impurities in polycrystalline silicon substrates, which deteriorate solar cell efficiency. Comparison of the minority carrier lifetime with the grain size showed that the region with short minority carrier lifetimes did not correspond to the region with small grains. Conversely, the minority carrier lifetime decreased as the etch-pit density (EPD) increased, suggesting that the minority carrier lifetime is strongly affected by the EPD. Electron beam induced current measurements revealed that a combination of grain boundaries and point defects had high recombination activity. Regarding impurities, the interstitial oxygen concentration was relatively low compared with that in a Czochralski-grown silicon substrate, the total carbon concentration exceeded the solubility limit of silicon melt. X-ray microprobe fluorescence measurements revealed a large amount of iron in the regions where there were many etch-pits and grain boundaries with etch-pits. X-ray absorption near edge spectrum analysis revealed trapped iron in the form of oxidized iron

Fabrication of heterojunction solar cells by using microcrystalline hydrogenated silicon oxide film as an emitter

International Nuclear Information System (INIS)

Banerjee, Chandan; Sritharathikhun, Jaran; Konagai, Makoto; Yamada, Akira

2008-01-01

Wide gap, highly conducting n-type hydrogenated microcrystalline silicon oxide (μc-SiO : H) films were prepared by very high frequency plasma enhanced chemical vapour deposition at a very low substrate temperature (170 deg. C) as an alternative to amorphous silicon (a-Si : H) for use as an emitter layer of heterojunction solar cells. The optoelectronic properties of n-μc-SiO : H films prepared for the emitter layer are dark conductivity = 0.51 S cm -1 at 20 nm thin film, activation energy = 23 meV and E 04 = 2.3 eV. Czochralski-grown 380 μm thick p-type (1 0 0) oriented polished silicon wafers with a resistivity of 1-10 Ω cm were used for the fabrication of heterojunction solar cells. Photovoltaic parameters of the device were found to be V oc = 620 mV, J sc = 32.1 mA cm -2 , FF = 0.77, η = 15.32% (active area efficiency)

Effect of impurities on the growth of {113} interstitial clusters in silicon under electron irradiation

Science.gov (United States)

Nakai, K.; Hamada, K.; Satoh, Y.; Yoshiie, T.

2011-01-01

The growth and shrinkage of interstitial clusters on {113} planes were investigated in electron irradiated Czochralski grown silicon (Cz-Si), floating-zone silicon (Fz-Si), and impurity-doped Fz-Si (HT-Fz-Si) using a high voltage electron microscope. In Fz-Si, {113} interstitial clusters were formed only near the beam incident surface after a long incubation period, and shrank on subsequent irradiation from the backside of the specimen. In Cz-Si and HT-Fz-Si, {113} interstitial clusters nucleated uniformly throughout the specimen without incubation, and began to shrink under prolonged irradiation at higher electron beam intensity. At lower beam intensity, however, the {113} interstitial cluster grew stably. These results demonstrate that the {113} interstitial cluster cannot grow without a continuous supply of impurities during electron irradiation. Detailed kinetics of {113} interstitial cluster growth and shrinkage in silicon, including the effects of impurities, are proposed. Then, experimental results are analyzed using rate equations based on these kinetics.

Crystal growth, optical properties, and continuous-wave laser operation of Nd3+-doped Lu2SiO5 crystal

International Nuclear Information System (INIS)

Li, D Z; Xu, X D; Zhou, D H; Xia, C T; Wu, F; Xu, J; Cong, Z H; Zhang, J; Tang, D Y

2011-01-01

High quality Nd 3+ -doped Lu 2 SiO 5 (Nd:LSO) crystal has been grown by the Czochralski technique. The cell parameters were analyzed with X-ray diffraction (XRD). Room temperature absorption and fluorescence spectra and fluorescence lifetime of the Nd:LSO crystal were measured and analyzed. The Judd-Ofelt intensity parameters Ω 2,4,6 were obtained to be 2.59, 4.90, and 5.96×10 -20 cm 2 , respectively. The absorption and emission cross sections and the branching ratios were calculated. The peak emission cross section is 5.8 and 6.6×10 -20 cm 2 at 1075 and 1079 nm, respectively, with full width at half maximum (FWHM) of 2.8 and 5.1 nm in turn. Pumped by a laser diode, a maximum 2.54 W continuous-wave laser output has been obtained with a slope efficiency of 32%. All the results show that this crystal is a promising laser material

Performance of the INTPIX6 SOI pixel detector

International Nuclear Information System (INIS)

Arai, Y.; Miyoshi, T.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Turala, M.; Kucewicz, W.

2017-01-01

Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ  m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241 Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e − . The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e − . The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

Performance of the INTPIX6 SOI pixel detector

Science.gov (United States)

Arai, Y.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Kucewicz, W.; Miyoshi, T.; Turala, M.

2017-01-01

Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e-. The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e-. The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

Temperature dependence of Ce:YAG single-crystal phosphors for high-brightness white LEDs/LDs

Science.gov (United States)

Arjoca, Stelian; Víllora, Encarnación G.; Inomata, Daisuke; Aoki, Kazuo; Sugahara, Yoshiyuki; Shimamura, Kiyoshi

2015-05-01

The growth of Ce:Y3Al5O12(Ce:YAG) single-crystal phosphors (SCPs) by the Czochralski technique is analyzed in terms of segregation coefficient, solubility and absorption cross-section. The emission characteristics of these SCPs are investigated in a wide temperature range, from liquid He temperature up to 500 °C. The internal quantum efficiency of SCPs achieves its maximum at about 250 °C. Thermal quenching of SCPs at high temperature is attributed to the Mott-Seitz mechanism. In the case of ceramic powder phosphors, a continuous droop is observed with the temperature due to defect-related non-radiative recombination paths. It is shown that (Ce:YAG SCPs + blue LEDs/LDs) can cover a wide range of color temperatures 5500-7000 K, with color rendering indices around 70. In conclusion, it is shown that Ce:YAG SCPs are the most efficient and temperature stable converters to fabricate high-brightness white light sources with high-power blue LEDs and LDs.

Crystal growth, optical properties, and continuous-wave laser operation of Nd3+-doped Lu2SiO5 crystal

Science.gov (United States)

Li, D. Z.; Xu, X. D.; Zhou, D. H.; Xia, C. T.; Wu, F.; Xu, J.; Cong, Z. H.; Zhang, J.; Tang, D. Y.

2011-01-01

High quality Nd3+-doped Lu2SiO5 (Nd:LSO) crystal has been grown by the Czochralski technique. The cell parameters were analyzed with X-ray diffraction (XRD). Room temperature absorption and fluorescence spectra and fluorescence lifetime of the Nd:LSO crystal were measured and analyzed. The Judd-Ofelt intensity parameters Ω2,4,6 were obtained to be 2.59, 4.90, and 5.96×10-20 cm2, respectively. The absorption and emission cross sections and the branching ratios were calculated. The peak emission cross section is 5.8 and 6.6×10-20 cm2 at 1075 and 1079 nm, respectively, with full width at half maximum (FWHM) of 2.8 and 5.1 nm in turn. Pumped by a laser diode, a maximum 2.54 W continuous-wave laser output has been obtained with a slope efficiency of 32%. All the results show that this crystal is a promising laser material.

Multiple batch recharging for industrial CZ silicon growth

Science.gov (United States)

Fickett, B.; Mihalik, G.

2001-05-01

The Czochralski (CZ) crystal growth process used in the Siemens Solar Industries’ (SSI) Vancouver, WA facility was non-continuous. Each furnace run's production was limited by the size of the starting charge. Once the charge was depleted, the furnace was shut down, cooled, and set back up for the next run. A recharge system was developed which transforms standard CZ growth into a semi-continuous process. Now when the charge is depleted, the crucible can be refilled in situ as the grown ingot is being removed from the furnace. SSI has demonstrated up to 14 recharge cycles in a single run. The resulting benefits included: significant cost reduction, increased yield, increased throughput, reduced energy consumption, improved process capability, reduced material handling requirements, and reduced labor. The recharge system also enables the use of granular silicon, which requires less than 30% of the energy required when manufacturing silicon-starting materials. This significantly reduces the energy “pay-back” time associated with SSI's finished product, photovoltaic panels.

Defects Identification and Effects of Annealing on Lu2(1-xY2xSiO5 (LYSO Single Crystals for Scintillation Application

Directory of Open Access Journals (Sweden)

Samuel Blahuta

2011-07-01

Full Text Available The nature, properties and relative concentrations of electronic defects were investigated by Thermoluminescence (TL in Lu2(1-xY2xSiO5 (LYSO single crystals. Ce and Tb-doped single crystals, grown by the Czochralski technique (CZ, revealed similar traps in TL. LYSO:Ce single crystals were grown by the Floating-Zone technique (FZ with increasing oxygen concentration in the growth atmosphere. TL intensity is strongly dependent on the oxygen content of the material, and oxygen vacancies are proven to be the main electronic defects in LYSO. The effects of oxidizing and reducing annealing post-treatment on these defects were investigated. While oxidizing treatments efficiently reduce the amount of electronic defects, reducing treatments increase the amount of existing traps. In a thermally assisted tunneling mechanism, the localization of oxygen vacancies around the dopant is discussed. They are shown to be in the close vicinity of the dopant, though not in first neighbor positions.

Recent advancements in the development of radiation hard semiconductor detectors for S-LHC

CERN Document Server

Fretwurst, E; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A G; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, L; Dalla Betta, G F; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; González-Sevilla, S; Gorelov,I; Goss, J; Gouldwell-Bates, A; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R P; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V P; Kierstead, J A; Klaiber Lodewigs, J M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, I; Lazanu, S; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindström, G; Linhart, V; Litovchenko, P G; Litovchenko, A P; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, Panja; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Martí i García, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; O'Shea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Populea, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidela, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

2005-01-01

The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 1016 hadrons/cm2. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored for a possible solution of this challenge. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has started in 2002 an R&D program for the development of detector technologies that will fulfill the requirements of the S-LHC. Different strategies are followed by RD50 to improve the radiation tolerance. These include the development of defect engineered silicon like Czochralski, epitaxial and oxygen-enriched silicon and of other semiconductor materials like SiC and GaN as well as extensive studies of the microscopic defects responsible for the degradation of irradiated sensors. Furthe...

Development of radiation tolerant semiconductor detectors for the Super-LHC

CERN Document Server

Moll, M; Al-Ajili, A A; Alfieri, G; Allport, P P; Artuso, M; Assouak, S; Avset, B S; Barabash, L; Barcz, A; Bates, R; Biagi, S F; Bilei, G M; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bölla, G; Bondarenko, G B; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, T J V; Brodbeck, T J; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Betta, G F D; Dawson, I; de Boer, Wim; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Fretwurst, E; García, C; García-Navarro, J E; Gaubas, E; Genest, M H; Gill, K A; Giolo, K; Glaser, M; Gössling, C; Golovine, V; Sevilla, S G; Gorelov, I; Goss, J; Bates, A G; Grégoire, G; Gregori, P; Grigoriev, E; Grillo, A A; Groza, A; Guskov, J; Haddad, L; Härkönen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, Roland Paul; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, Yu S; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, K M H; Jones, B K; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V; Kierstead, J A; Klaiber Lodewigs, J; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K M; Lastovetsky, V F; Latino, G; Lazanu, S; Lazanu, I; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li Z; Lindström, G; Linhart, V; Litovchenko, A P; Litovchenko, P G; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Makarenko, L F; Mandic, I; Manfredotti, C; Manna, N; Garcia, S Mi; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzhevska, E; Nysten, J; Olivero, P; OShea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piemonte, C; Pignatel, G U; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Popule, J; Pospísil, S; Pozza, A; Radicci, V; Rafí, J M; Rando, R; Röder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, H F W; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P J; Sentenac, D; Shipsey, I; Sícho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, B G; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullán, M; Vaitkus, J V; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

2005-01-01

The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 ...

Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity

Directory of Open Access Journals (Sweden)

Verena Steckenreiter

2017-03-01

Full Text Available Based on contactless carrier lifetime measurements performed on p-type boron-doped Czochralski-grown silicon (Cz-Si wafers, we examine the rate constant Rde of the permanent deactivation process of the boron-oxygen-related defect center as a function of the illumination intensity I at 170°C. While at low illumination intensities, a linear increase of Rde on I is measured, at high illumination intensities, Rde seems to saturate. We are able to explain the saturation by assuming that Rde increases proportionally with the excess carrier concentration Δn and take the fact into account that at sufficiently high illumination intensities, the carrier lifetime decreases with increasing Δn and hence the slope of Δn(I decreases, leading to an apparent saturation. Importantly, on low-lifetime Cz-Si samples no saturation of the deactivation rate constant is observed for the same illumination intensities, proving that the deactivation is stimulated by the presence of excess electrons and not directly by the photons.

Vacancy-type defects induced by grinding of Si wafers studied by monoenergetic positron beams

Energy Technology Data Exchange (ETDEWEB)

Uedono, Akira; Yoshihara, Nakaaki [Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Mizushima, Yoriko [Devices and Materials Labs Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Kim, Youngsuk [ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Disco Corporation, Ota, Tokyo 143-8580 (Japan); Nakamura, Tomoji [Devices and Materials Labs Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197 (Japan); Ohba, Takayuki [ICE Cube Center, Tokyo Institute of Technology, Yokohama 226-8503 (Japan); Oshima, Nagayasu; Suzuki, Ryoichi [Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

2014-10-07

Vacancy-type defects introduced by the grinding of Czochralski-grown Si wafers were studied using monoenergetic positron beams. Measurements of Doppler broadening spectra of the annihilation radiation and the lifetime spectra of positrons showed that vacancy-type defects were introduced in the surface region (<98 nm), and the major defect species were identified as (i) relatively small vacancies incorporated in dislocations and (ii) large vacancy clusters. Annealing experiments showed that the defect concentration decreased with increasing annealing temperature in the range between 100 and 500°C. After 600–700°C annealing, the defect-rich region expanded up to about 170 nm, which was attributed to rearrangements of dislocation networks, and a resultant emission of point defects toward the inside of the sample. Above 800°C, the stability limit of those vacancies was reached and they started to disappear. After the vacancies were annealed out (900°C), oxygen-related defects were the major point defects and they were located at <25 nm.

Investigation of semi-insulating InP co-doped with Ti and various acceptors for use in X-ray detection

International Nuclear Information System (INIS)

Zdansky, K.; Gorodynskyy, V.; Kozak, H.; Pekarek, L.

2005-01-01

Semi-insulating InP single crystals co-doped with Zn and Ti and co-doped with Ti and Mn were grown by Czochralski technique. Wafers of these crystals were annealed for a long time at a high temperature and cooled slowly. The samples were characterized by temperature dependent resistivity and Hall coefficient measurements. The binding energies of Ti in semi-insulating InP co-doped with Ti and Zn and co-doped with Ti and Mn were found to differ which shows that Ti may occupy different sites in InP. The curves of Hall coefficient vs. reciprocal temperature deviate from straight lines at low temperatures due to electron and hole mixed conductance. The value of resistivity of the annealed semi-insulating InP co-doped with Ti and Mn reaches high resistivity at a reduced temperature easily achievable by thermo-electric devices which could make this material useable in X-ray detection. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Effect of low-oxygen-concentration layer on iron gettering capability of carbon-cluster ion-implanted Si wafer for CMOS image sensors

Science.gov (United States)

Onaka-Masada, Ayumi; Nakai, Toshiro; Okuyama, Ryosuke; Okuda, Hidehiko; Kadono, Takeshi; Hirose, Ryo; Koga, Yoshihiro; Kurita, Kazunari; Sueoka, Koji

2018-02-01

The effect of oxygen (O) concentration on the Fe gettering capability in a carbon-cluster (C3H5) ion-implanted region was investigated by comparing a Czochralski (CZ)-grown silicon substrate and an epitaxial growth layer. A high Fe gettering efficiency in a carbon-cluster ion-implanted epitaxial growth layer, which has a low oxygen region, was observed by deep-level transient spectroscopy (DLTS) and secondary ion mass spectroscopy (SIMS). It was demonstrated that the amount of gettered Fe in the epitaxial growth layer is approximately two times higher than that in the CZ-grown silicon substrate. Furthermore, by measuring the cathodeluminescence, the number of intrinsic point defects induced by carbon-cluster ion implantation was found to differ between the CZ-grown silicon substrate and the epitaxial growth layer. It is suggested that Fe gettering by carbon-cluster ion implantation comes through point defect clusters, and that O in the carbon-cluster ion-implanted region affects the formation of gettering sinks for Fe.

CCE measurements and annealing studies on proton-irradiated p-type MCz silicon diodes

CERN Document Server

Hoedlmoser, H; Köhler, M; Nordlund, H

2007-01-01

Magnetic Czochralski (MCz) silicon has recently been investigated for the development of radiation tolerant detectors for future high-luminosity HEP experiments. A study of p-type MCz Silicon diodes irradiated with protons up to a fluence of has been performed by means of Charge Collection Efficiency (CCE) measurements as well as standard CV/IV characterizations. The changes of CCE, full depletion voltage and leakage current as a function of fluence are reported. A subsequent annealing study of the irradiated detectors shows an increase in effective doping concentration and a decrease in the leakage current, whereas the CCE remains basically unchanged. Two different series of detectors have been compared differing in the implantation dose of p-spray isolation as well as effective doping concentration (Neff) of the p-type bulk presumably due to a difference in thermal donor (TD) activation during processing. The series with the higher concentration of TDs shows a delayed reverse annealing of Neff after irradia...

Probing vacancy-type free-volume defects in Li2B4O7 single crystal by positron annihilation lifetime spectroscopy

Science.gov (United States)

Shpotyuk, O.; Adamiv, V.; Teslyuk, I.; Ingram, A.; Demchenko, P.

2018-01-01

Vacancy-type free-volume defects in lithium tetraborate Li2B4O7 single crystal, grown by the Czochralski technique, are probed with positron annihilation spectroscopy in the lifetime measuring mode. The experimental positron lifetime spectrum is reconstructed within the three-component fitting, involving channels of positron and positronium Ps trapping, as well as within the two-component fitting with a positronium-compensating source input. Structural configurations of the most efficient positron traps are considered using the crystallographic specificity of lithium tetraborate with the main accent on cation-type vacancies. Possible channels of positron trapping are visualized using the electronic structure calculations with density functional theory at the basis of structural parameters proper to Li2B4O7. Spatially-extended positron-trapping complexes involving singly-ionized lithium vacancies, with character lifetime close to 0.32 ns, are responsible for positron trapping in the nominally undoped lithium tetraborate Li2B4O7 crystal.

Mining Method

Energy Technology Data Exchange (ETDEWEB)

Kim, Young Shik; Lee, Kyung Woon; Kim, Oak Hwan; Kim, Dae Kyung [Korea Institute of Geology Mining and Materials, Taejon (Korea, Republic of)

1996-12-01

The reducing coal market has been enforcing the coal industry to make exceptional rationalization and restructuring efforts since the end of the eighties. To the competition from crude oil and natural gas has been added the growing pressure from rising wages and rising production cost as the workings get deeper. To improve the competitive position of the coal mines against oil and gas through cost reduction, studies to improve mining system have been carried out. To find fields requiring improvements most, the technologies using in Tae Bak Colliery which was selected one of long running mines were investigated and analyzed. The mining method appeared the field needing improvements most to reduce the production cost. The present method, so-called inseam roadway caving method presently is using to extract the steep and thick seam. However, this method has several drawbacks. To solve the problems, two mining methods are suggested for a long term and short term method respectively. Inseam roadway caving method with long-hole blasting method is a variety of the present inseam roadway caving method modified by replacing timber sets with steel arch sets and the shovel loaders with chain conveyors. And long hole blasting is introduced to promote caving. And pillar caving method with chock supports method uses chock supports setting in the cross-cut from the hanging wall to the footwall. Two single chain conveyors are needed. One is installed in front of chock supports to clear coal from the cutting face. The other is installed behind the supports to transport caved coal from behind. This method is superior to the previous one in terms of safety from water-inrushes, production rate and productivity. The only drawback is that it needs more investment. (author). 14 tabs., 34 figs.

Perturbation methods

CERN Document Server

Nayfeh, Ali H

2008-01-01

1. Introduction 1 2. Straightforward Expansions and Sources of Nonuniformity 23 3. The Method of Strained Coordinates 56 4. The Methods of Matched and Composite Asymptotic Expansions 110 5. Variation of Parameters and Methods of Averaging 159 6. The Method of Multiple Scales 228 7. Asymptotic Solutions of Linear Equations 308 References and Author Index 387 Subject Index 417

A Novel Polygonal Finite Element Method: Virtual Node Method

Science.gov (United States)

Tang, X. H.; Zheng, C.; Zhang, J. H.

2010-05-01

Polygonal finite element method (PFEM), which can construct shape functions on polygonal elements, provides greater flexibility in mesh generation. However, the non-polynomial form of traditional PFEM, such as Wachspress method and Mean Value method, leads to inexact numerical integration. Since the integration technique for non-polynomial functions is immature. To overcome this shortcoming, a great number of integration points have to be used to obtain sufficiently exact results, which increases computational cost. In this paper, a novel polygonal finite element method is proposed and called as virtual node method (VNM). The features of present method can be list as: (1) It is a PFEM with polynomial form. Thereby, Hammer integral and Gauss integral can be naturally used to obtain exact numerical integration; (2) Shape functions of VNM satisfy all the requirements of finite element method. To test the performance of VNM, intensive numerical tests are carried out. It found that, in standard patch test, VNM can achieve significantly better results than Wachspress method and Mean Value method. Moreover, it is observed that VNM can achieve better results than triangular 3-node elements in the accuracy test.

Method Engineering: Engineering of Information Systems Development Methods and Tools

NARCIS (Netherlands)

Brinkkemper, J.N.; Brinkkemper, Sjaak

1996-01-01

This paper proposes the term method engineering for the research field of the construction of information systems development methods and tools. Some research issues in method engineering are identified. One major research topic in method engineering is discussed in depth: situational methods, i.e.

Enhancing the (MSLDIP) image steganographic method (ESLDIP method)

Science.gov (United States)

Seddik Saad, Al-hussien

2011-10-01

Message transmissions over the Internet still have data security problem. Therefore, secure and secret communication methods are needed for transmitting messages over the Internet. Cryptography scrambles the message so that it cannot be understood. However, it makes the message suspicious enough to attract eavesdropper's attention. Steganography hides the secret message within other innocuous-looking cover files (i.e. images, music and video files) so that it cannot be observed [1].The term steganography originates from the Greek root words "steganos'' and "graphein'' which literally mean "covered writing''. It is defined as the science that involves communicating secret data in an appropriate multimedia carrier, e.g., image, audio text and video files [3].Steganographic techniques allow one party to communicate information to another without a third party even knowing that the communication is occurring. The ways to deliver these "secret messages" vary greatly [3].Our proposed method called Enhanced SLDIP (ESLDIP). In which the maximmum hiding capacity (MHC) of proposed ESLDIP method is higher than the previously proposed MSLDIP methods and the PSNR of the ESLDIP method is higher than the MSLDIP PSNR values', which means that the image quality of the ESLDIP method will be better than MSLDIP method and the maximmum hiding capacity (MHC) also improved. The rest of this paper is organized as follows. In section 2, steganography has been discussed; lingo, carriers and types. In section 3, related works are introduced. In section 4, the proposed method will be discussed in details. In section 5, the simulation results are given and Section 6 concludes the paper.

Method Engineering: Engineering of Information Systems Development Methods and Tools

OpenAIRE

Brinkkemper, J.N.; Brinkkemper, Sjaak

1996-01-01

This paper proposes the term method engineering for the research field of the construction of information systems development methods and tools. Some research issues in method engineering are identified. One major research topic in method engineering is discussed in depth: situational methods, i.e. the configuration of a project approach that is tuned to the project at hand. A language and support tool for the engineering of situational methods are discussed.

Numerical Methods for Stochastic Computations A Spectral Method Approach

CERN Document Server

Xiu, Dongbin

2010-01-01

The first graduate-level textbook to focus on fundamental aspects of numerical methods for stochastic computations, this book describes the class of numerical methods based on generalized polynomial chaos (gPC). These fast, efficient, and accurate methods are an extension of the classical spectral methods of high-dimensional random spaces. Designed to simulate complex systems subject to random inputs, these methods are widely used in many areas of computer science and engineering. The book introduces polynomial approximation theory and probability theory; describes the basic theory of gPC meth

Mining method selection by integrated AHP and PROMETHEE method.

Science.gov (United States)

Bogdanovic, Dejan; Nikolic, Djordje; Ilic, Ivana

2012-03-01

Selecting the best mining method among many alternatives is a multicriteria decision making problem. The aim of this paper is to demonstrate the implementation of an integrated approach that employs AHP and PROMETHEE together for selecting the most suitable mining method for the "Coka Marin" underground mine in Serbia. The related problem includes five possible mining methods and eleven criteria to evaluate them. Criteria are accurately chosen in order to cover the most important parameters that impact on the mining method selection, such as geological and geotechnical properties, economic parameters and geographical factors. The AHP is used to analyze the structure of the mining method selection problem and to determine weights of the criteria, and PROMETHEE method is used to obtain the final ranking and to make a sensitivity analysis by changing the weights. The results have shown that the proposed integrated method can be successfully used in solving mining engineering problems.

Thermal stress during RTP processes and its possible effect on the light induced degradation in Cz-Si wafers

Science.gov (United States)

Kouhlane, Yacine; Bouhafs, Djoudi; Khelifati, Nabil; Guenda, Abdelkader; Demagh, Nacer-Eddine; Demagh, Assia; Pfeiffer, Pierre; Mezghiche, Salah; Hetatache, Warda; Derkaoui, Fahima; Nasraoui, Chahinez; Nwadiaru, Ogechi Vivian

2018-04-01

In this study, the carrier lifetime variation of p-type boron-doped Czochralski silicon (Cz-Si) wafers was investigated after a direct rapid thermal processing (RTP). Two wafers were passivated by silicon nitride (SiNx:H) layers, deposited by a PECVD system on both surfaces. Then the wafers were subjected to an RTP cycle at a peak temperature of 620 °C. The first wafer was protected (PW) from the direct radiative heating of the RTP furnace by placing the wafer between two as-cut Cz-Si shield wafers during the heat processing. The second wafer was not protected (NPW) and followed the same RTP cycle procedure. The carrier lifetime τ eff was measured using the QSSPC technique before and after illumination for 5 h duration at 0.5 suns. The immediate results of the measured lifetime (τ RTP ) after the RTP process have shown a regeneration in the lifetime of the two wafers with the PW wafer exhibiting an important enhancement in τ RTP as compared to the NPW wafer. The QSSPC measurements have indicated a good stable lifetime (τ d ) and a weak degradation effect was observed in the case of the PW wafer as compared to their initial lifetime value. Interferometry technique analyses have shown an enhancement in the surface roughness for the NPW wafer as compared to the protected one. Additionally, to improve the correlation between the RTP heat radiation stress and the carrier lifetime behavior, a simulation of the thermal stress and temperature profile using the finite element method on the wafers surface at RTP peak temperature of 620 °C was performed. The results confirm the reduction of the thermal stress with less heat losses for the PW wafer. Finally, the proposed method can lead to improving the lifetime of wafers by an RTP process at minimum energy costs.

Temperature dependence of luminescence characteristics of Lu.sub.2(1-x)./sub.Y.sub.2x./sub.SiO.sub.5./sub.: Ce.sup.3+./sup. scintillator grown by the Czochralski method

Czech Academy of Sciences Publication Activity Database

Feng, H.; Jarý, Vítězslav; Mihóková, Eva; Ding, D.; Nikl, Martin; Ren, G.; Li, H.; Pan, S.; Beitlerová, Alena; Kučerková, Romana

2010-01-01

Roč. 108, č. 3 (2010), 033519/1-033519/6 ISSN 0021-8979 R&D Projects: GA MŠk(CZ) ME10084 Institutional research plan: CEZ:AV0Z10100521 Keywords : temperature dependence * luminescence * scintillator Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.064, year: 2010