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Sample records for czochralski grown bulk

  1. Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al

    Science.gov (United States)

    Galazka, Zbigniew; Ganschow, Steffen; Fiedler, Andreas; Bertram, Rainer; Klimm, Detlef; Irmscher, Klaus; Schewski, Robert; Pietsch, Mike; Albrecht, Martin; Bickermann, Matthias

    2018-03-01

    We experimentally evaluated segregation of Cr, Ce and Al in bulk β-Ga2O3 single crystals grown by the Czochralski method, as well as the impact of these dopants on optical properties. The segregation of Cr and Ce and their incorporation into the β-Ga2O3 crystal structure strongly depends on O2 concentration in the growth atmosphere which has a noticeable impact on decomposition of Ga2O3 and Cr2O3, as well as on the charge state of Cr and Ce. Effective segregation coefficients for Cr are in the range of 3.1-1.5 at 7-24 vol% O2, while for Ce they are roughly below 0.01 at 1.5-34 vol% O2. The effective segregation coefficient for Al is 1.1 at 1.5-21 vol% O2. Both dopants Ce and Al have a thermodynamically stabilizing effect on β-Ga2O3 crystal growth by supressing decomposition. While Ce has no impact on the optical transmittance in the ultraviolet and visible regions, in Cr doped crystals we observe three absorption bands due to Cr3+ on octahedral Ga sites, one in the ultraviolet merging with the band edge absorption of β-Ga2O3 and two in the visible spectrum, for which we estimate the absorption cross sections. Al doping also does not induce dopant related absorption bands but clearly shifts the absorption edge as one expects for a solid-solution crystal Ga2(1-x)Al2xO3 still in the monoclinic phase. For the highest doping concentration (Ga1.9Al0.1O3) we estimate an increase of the energy gap by 0.11 eV.

  2. Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

    International Nuclear Information System (INIS)

    Ma, S K; Lui, M K; Ling, C C; Fung, S; Beling, C D; Li, K F; Cheah, K W; Gong, M; Hang, H S; Weng, H M

    2004-01-01

    Electron irradiated undoped liquid encapsulated Czochralski (LEC) grown GaSb samples were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). In addition to the 315 ps component reported in the previous studies, another defect with a lifetime of 280 ps was also identified in the present electron irradiated samples. The bulk lifetime of the GaSb material was found to be 258 ps. The V Ga,280ps and the V Ga,315ps defects were associated with two independent Ga vacancy related defects having different microstructures. The well known 777 meV PL signal (usually band A) was also observed in the electron irradiated undoped GaSb samples. The band A intensity decreases with increasing electron irradiation dosage and it disappears after the 300 deg. C annealing regardless of the irradiation dosage. The origin of the band A signal is also discussed

  3. Energy variable monoenergetic positron beam study of oxygen atoms in Czochralski grown Si

    International Nuclear Information System (INIS)

    Tanigawa, S.; Wei, L.; Tabuki, Y.; Nagai, R.; Takeda, E.

    1992-01-01

    A monoenergetic positron beam has been used to investigate the state of interstitial oxygen in Czochralski-grown Si with the coverage of SiO 2 (100 nm) and poly-Si (200 nm)/SiO 2 (100 nm), respectively. It was found that (i) the growth of SiO 2 gives rise to a strong Doppler broadening of positron annihilation radiations in the bulk of Si, (ii) such a broadening can be recovered to the original level by annealing at 450degC, by the removal of overlayers using chemical etching and long-term aging at room temperature, (iii) the film stress over the CZ-grown Si is responsible for the rearrangement of oxygen atoms in S and (iv) only tensile stress gives rise to the clustering of oxygen atoms. The observed broadening was assigned to arise from the positron trapping by oxygen interstitial clusters. It was concluded that film stress is responsible for the rearrangement of oxygen atoms in CZ-grown Si. (author)

  4. Real structure of LaGaO3 monocrystals grown by Czochralski method

    International Nuclear Information System (INIS)

    Morozov, A.N.; Morozova, O.Yu.; Ponomarev, N.M.

    1993-01-01

    A complex X-ray diffraction study of lanthanum (ortho)gallate crystal structure and structural defects in LaGaO 3 crystals grown by the Czochralski method is carried out. Coordinates of atoms in LaGaO 3 unit cell are determined. X-Ray topographic studies of oriented LaGaO 3 sublayers for high-tc superconductor film growth are optimized. The substructure of monocrystals is studied

  5. Defects in Czochralski-grown silicon crystals investigated by positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Ikari, Atsushi; Kawakami, Kazuto; Haga, Hiroyo [Nippon Steel Corp., Sagamihara, Kanagawa (Japan). Electronics Research Labs.; Uedono, Akira; Wei, Long; Kawano, Takao; Tanigawa, Shoichiro

    1994-10-01

    Positron lifetime and Doppler broadening experiments were performed on Czochralski-grown silicon crystals. A monoenergetic positron beam was also used to measure the diffusion length of positrons in the wafer. From the measurements, it was observed that the value of diffusion length of positrons decreased at the region where microdefects were formed during the crystal growth process. It was also found that the line shape parameter S decreased and the lifetime of positrons increased at the region. These results can be attributed to the annihilation of positrons trapped by vacancy oxygen complexes which are formed in association with the microdefects. (author).

  6. Phase-separated CsI-NaCl scintillator grown by the Czochralski method

    Science.gov (United States)

    Yasui, Nobuhiro; Kobayashi, Tamaki; Ohashi, Yoshihiro; Den, Toru

    2014-08-01

    A phase-separated CsI-NaCl scintillator with light-guiding properties was grown by the Czochralski method. The CsI-NaCl eutectic phase usually consists of NaCl cylinders in a CsI matrix and contains grain boundaries. However, we have grown composites without grain boundaries by creating a convex solid/liquid interface, selecting a single grain by Dash's neck method, and increasing the diameter of the composite moderately. The good continuous convection flow required for these conditions was achieved by suppressing the drop in the aspect ratio of the melt height to the crucible radius with a double crucible setup. We successfully obtained a CsI-NaCl:Tl composite that was uniform with no grain boundaries greater than 30 mm in diameter.

  7. Oxygen microclusters in Czochralski-grown Si probed by positron annihilation

    Energy Technology Data Exchange (ETDEWEB)

    Uedono, Akira; Wei Long; Tanigawa, Shoichiro [Tsukuba Univ., Ibaraki (Japan). Inst. of Materials Science; Kawano, Takao; Ikari, Atsushi; Kawakami, Kazuto; Itoh, Hisayoshi

    1994-08-01

    Trapping of positrons by oxygen microclusters in Czochralski-grown Si was studied. Lifetime spectra of positrons were measured for Si specimens annealed in the temperature range between 450degC and 1000degC. Positrons were found to be trapped by oxygen microclusters, and the trapping rate of positrons into such defects increased with increasing annealing temperature. In order to investigate the clustering behaviors of oxygen atoms in more derail, vacancy-oxygen complexes, V{sub n}O{sub m} (n,m=1,2, {center_dot}{center_dot}{center_dot}), were introduced by 3MeV electron irradiation. The concentration of monovacancy-oxygen complexes VO{sub m}(m=2,3, {center_dot}{center_dot}{center_dot}) increased with increasing annealing temperature. These facts were attributed that the oxygen microclusters, O{sub m}, were introduced by annealing above 700degC. (author).

  8. Oxygen microclusters in Czochralski-grown Si probed by positron annihilation

    International Nuclear Information System (INIS)

    Uedono, Akira; Wei Long; Tanigawa, Shoichiro; Kawano, Takao; Ikari, Atsushi; Kawakami, Kazuto; Itoh, Hisayoshi.

    1994-01-01

    Trapping of positrons by oxygen microclusters in Czochralski-grown Si was studied. Lifetime spectra of positrons were measured for Si specimens annealed in the temperature range between 450degC and 1000degC. Positrons were found to be trapped by oxygen microclusters, and the trapping rate of positrons into such defects increased with increasing annealing temperature. In order to investigate the clustering behaviors of oxygen atoms in more derail, vacancy-oxygen complexes, V n O m (n,m=1,2, ···), were introduced by 3MeV electron irradiation. The concentration of monovacancy-oxygen complexes VO m (m=2,3, ···) increased with increasing annealing temperature. These facts were attributed that the oxygen microclusters, O m , were introduced by annealing above 700degC. (author)

  9. Spatially resolved localized vibrational mode spectroscopy of carbon in liquid encapsulated Czochralski grown gallium arsenide wafers

    International Nuclear Information System (INIS)

    Yau, Waifan.

    1988-04-01

    Substitutional carbon on an arsenic lattice site is the shallowest and one of the most dominant acceptors in semi-insulating Liquid Encapsulated Czochralski (LEC) GaAs. However, the role of this acceptor in determining the well known ''W'' shape spatial variation of neutral EL2 concentration along the diameter of a LEC wafer is not known. In this thesis, we attempt to clarify the issue of the carbon acceptor's effect on this ''W'' shaped variation by measuring spatial profiles of this acceptor along the radius of three different as-grown LEC GaAs wafers. With localized vibrational mode absorption spectroscopy, we find that the profile of the carbon acceptor is relatively constant along the radius of each wafer. Average values of concentration are 8 x 10E15 cm -3 , 1.1 x 10E15 cm -3 , and 2.2 x 10E15 cm -3 , respectively. In addition, these carbon acceptor LVM measurements indicate that a residual donor with concentration comparable to carbon exists in these wafers and it is a good candidate for the observed neutral EL2 concentration variation. 22 refs., 39 figs

  10. Microdefects in an as-grown Czochralski silicon crystal studied by synchrotron radiation section topography with aid of computer simulation

    International Nuclear Information System (INIS)

    Iida, Satoshi; Aoki, Yoshirou; Okitsu, Kouhei; Sugita, Yoshimitsu; Kawata, Hiroshi; Abe, Takao

    1998-01-01

    Grown-in microdefects of a Czochralski (CZ) silicon crystal grown at a slow growth rate were studied by section topography using high energy synchrotron radiation. Images of the microdefects in the section topographs were analyzed quantitatively using computer simulation based on the Takagi-Taupin type dynamical diffraction theory of X-rays, and reproduced successfully by the simulation when the microdefects were assumed to be spherical strain centers. Sizes and positions of the microdefects were able to be determined by detailed comparison between the experiments and the computer simulations. The validity of the computer simulation in an analysis of the section topographs is discussed. (author)

  11. A versatile Czochralski crystal growth system with automatic diameter control

    Science.gov (United States)

    Aggarwal, M. D.; Metzl, R.; Wang, W. S.; Choi, J.

    1995-07-01

    A versatile Czochralski crystal pulling system with automatic diameter control for the growth of nonlinear optical oxide crystals is discussed. Pure and doped bulk single crystals of bismuth silicon oxide (Bi12SiO20) have been successfully grown using this system. The system consists of a regular Czochralski type pulling system with provision for continuous weighing of the growing crystal to provide feedback for power control.

  12. Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

    International Nuclear Information System (INIS)

    Slugen, V.; Harmatha, L.; Tapajna, M.; Ballo, P.; Pisecny, P.; Sik, J.; Koegel, G.; Krsjak, V.

    2006-01-01

    Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping

  13. Radiation-induced defects in Czochralski-grown silicon containing carbon and germanium

    International Nuclear Information System (INIS)

    Londos, C A; Andrianakis, A; Emtsev, V V; Ohyama, H

    2009-01-01

    Formation processes of vacancy-oxygen (VO) and carbon interstitial-oxygen interstitial (C i O i ) complexes in electron-irradiated Czochralski-grown Si crystals (Cz–Si), also doped with Ge, are investigated. IR spectroscopy measurements are employed to monitor the production of these defects. In Cz–Si with carbon concentrations [C s ] up to 1 × 10 17 cm −3 and Ge concentrations [Ge] up to 1 × 10 20 cm −3 the production rate of VO defects as well as the rate of oxygen loss show a slight growth of about 10% with the increasing Ge concentration. At high concentrations of carbon [C s ] around 2 × 10 17 cm −3 the production rate of VO defects is getting larger by ∼40% in Cz–Si:Ge at Ge concentrations around 1 × 10 19 cm −3 and then at [Ge] ≈ 2 × 10 20 cm −3 this enlargement drops to ∼13%, thus approaching the values characteristic of lesser concentrations of carbon. A similar behavior against Ge concentration displays the production rate of C i O i complexes. The same trend is also observed for the rate of carbon loss, whereas the trend for the rate of oxygen loss is opposite. The behavior of Ge atoms is different at low and high concentrations of this isoelectronic impurity in Cz–Si. At low concentrations most isolated Ge atoms serve as temporary traps for vacancies preventing them from indirect annihilation with self-interstitials. At high concentrations Ge atoms are prone to form clusters. The latter ones are traps for vacancies and self-interstitials due to the strain fields, increasing the importance of indirect annihilation of intrinsic point defects. Such a model allows one to give a plausible explanation for the obtained results. A new band at 994 cm −1 seen only in irradiated Ge-doped Cz–Si is also studied. Interestingly, its annealing behavior was found to be very similar to that of VO complexes

  14. Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon

    Science.gov (United States)

    Ueki, Takemi; Itsumi, Manabu; Takeda, Tadao

    1998-04-01

    We analyzed the side-wall structure of grown-in octahedral defects in Czochralski silicon standard wafers for large-scale integrated circuits. There are two types of twin octahedral defects: an overlapping type and an adjacent type. In the twin octahedral defects of the overlapping type, a hole is formed in the connection part. The side-wall layer in the hole part is formed continually and is the same thickness as the side-wall layers of both octahedrons. In the twin octahedral defects of the adjacent type, a partition layer is formed in the connection part. Our electron energy-loss spectroscopy analyses identified that the side-wall layer includes SiO2.

  15. Reliability of Czochralski-grown {beta}-BaB{sub 2}O{sub 4}(BBO) devices

    Energy Technology Data Exchange (ETDEWEB)

    Umezu, Nobuhiko; Fukui, Tatsuo; Okamoto, Tsutomu; Wada, Hiroyuki; Tatsuki, Kouichi; Kondo, Kenji; Kubota, Shigeo [Sony Corp., Tokyo (Japan)

    1998-03-01

    We have achieved more than 1000 hours-operation in 266 nm-continuous wave (CW), 100 mW-generation of all-solid-state-UV laser system using Czochralski (Cz)-grown {beta}-BaB{sub 2}O{sub 4}(BBO) crystal devices. Absorption of the Cz-grown crystal for e-ray at 266 nm was improved to 1%/cm, which is one-third lower than that of the crystal grown by top seeded solution growth (TSSG) method. Degradation rate of 266 nm generation, using 7 kHz repetition rate laser diode pumped Q switched Nd:YAG laser as a fundamental light source, was one order of magnitude lower than that of TSSG-crystal. Surface roughness of the crystal was better than 0.3 rms.-nm. HfO{sub 2} film with extremely high adhesion was deposited on the surfaces using reactive low voltage ion plating method. Our devices can be put to practical use in areas of photolithography, micro fabrication, material processing and ultra high density optical disk mastering. (author)

  16. Electrical property studies of oxygen in Czochralski-grown neutron-transmutation-doped silicon

    International Nuclear Information System (INIS)

    Cleland, J.W.; Fukuoka, N.

    1980-10-01

    Electically active oxygen-related donors can be formed in Czochralski (Cz) Si either during crystal growth or during subsequent heat treatment; conventional n- or p-type dopant carrier concentrations are altered if these oxygen donors are present. Neutron transmutation doping (NTD) has been used to introduce a uniform concentration of 31 P in Si. However, oxygen donors can also be formed in NTD Cz Si during the process of annealing to remove NTD radiation damage. In the present experiments, the carrier concentration of Cz and NTD Cz Si samples was determined as a function of the initial dopant, oxygen, and 31 P concentration before and after isothermal or isochronal annealing. It is shown that low temperature (350 to 500 0 C) heat treatment can introduce a significant oxygen donor concentration in Cz Si and in NTD Cz Si that contains radiation-induced lattice defects. Intermediate temperature (550 to 750 0 C) heat treatment, which is intended to remove oxygen donors or lattice defects, can introduce other oxygen donors; annealing above 750 0 C is required to remove any of these oxygen donors. Extended (20 h) high-temperature (1000 to 1200 0 C) annealing can remove oxygen donors and lattice defects, but a significant concentration of oxygen donors can still be introduced by subsequent low temperature heat treatment. These results suggest that oxygen-related donor formation in NTD Cz Si at temperatures below 750 0 C may serve to mask any annealing study of lattice defects. It is concluded that annealing for 30 min at 750 0 C is sufficient to remove radiation damage in NTD Cz Si when the separate effects of oxygen donor formation are included

  17. Distribution of Al and in impurities along homogeneous Ge-Si crystals grown by the Czochralski method using Si feeding rod

    Science.gov (United States)

    Kyazimova, V. K.; Alekperov, A. I.; Zakhrabekova, Z. M.; Azhdarov, G. Kh.

    2014-05-01

    A distribution of Al and In impurities in Ge1 - x Si x crystals (0 ≤ x ≤ 0.3) grown by a modified Czochralski method (with continuous feeding of melt using a Si rod) have been studied experimentally and theoretically. Experimental Al and In concentrations along homogeneous crystals have been determined from Hall measurements. The problem of Al and In impurity distribution in homogeneous Ge-Si single crystals grown in the same way is solved within the Pfann approximation. A set of dependences of Al and In concentrations on the crystal length obtained within this approximation demonstrates a good correspondence between the experimental and theoretical data.

  18. A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

    Science.gov (United States)

    Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

    1980-01-01

    Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

  19. Structural characteristics and physical properties of diortho(pyro)silicate crystals of lanthanides yttrium and scandium grown by the Czochralski technique

    Energy Technology Data Exchange (ETDEWEB)

    Anan' eva, G.V.; Karapetyan, V.E.; Korovkin, A.M.; Merkulyaeva, T.I.; Peschanskaya, I.A.; Savinova, I.P.; Feofilov, P.P. (Gosudarstvennyj Opticheskij Inst., Leningrad (USSR))

    1982-03-01

    Optically uniform monocrystals of diortho (pyro) silicates of lanthanides, yttrium, and scandium were grown by the Czochralski technique. Four structural types of Ln/sub 2/(Si/sub 2/O/sub 7/) crystals were determined by the roentgenographic method. The presence of structural subgroups was also supported by the method of spectroscopic probes. Structural parameters were determined and data on certain physical properties (fusion temperature, density, refractive indices, transparency) of investigated crystals were presented. The generation of induced emission at lambda=1.057 ..mu..m was obtained in La/sub 2/(Si/sub 2/O/sub 7/)-Nd/sup 3 +/ crystal.

  20. Determination of intrinsic polarization for K{sub 2}ZnCl{sub 4} single crystal grown by Czochralski technique for ferroelectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Sonu [Crystal Lab, Department of Physics & Astrophysics, University of Delhi, Delhi-7 (India); Ray, Geeta [Crystal Lab, Department of Physics & Astrophysics, University of Delhi, Delhi-7 (India); Physics Department, Miranda House, University of Delhi, Delhi-7 (India); Sinha, Nidhi [Crystal Lab, Department of Physics & Astrophysics, University of Delhi, Delhi-7 (India); Department of Electronics, SGTB Khalsa College, University of Delhi, Delhi-7 (India); Kumar, Binay, E-mail: b3kumar69@yahoo.co.in [Crystal Lab, Department of Physics & Astrophysics, University of Delhi, Delhi-7 (India)

    2017-04-01

    Large sized single crystal of K{sub 2}ZnCl{sub 4} (KZC) was grown by Czochralski (Cz) technique. Structural parameters of KZC were determined by Single crystal X-ray diffraction (SCXRD). From DSC analysis and temperature dependent dielectric measurement, KZC crystal was found to show Curie phase transition at 151 °C. TG/DTA confirmed the melting point that was found to be 443 °C. The value of piezoelectric charge coefficient (d{sub 33}) for KZC crystal was found to be 32 pC/N demonstrating their applicability in transducers and piezoelectric devices. Ferroelectric P-E loop for the grown crystal was traced at room temperature and the intrinsic polarization obtained by PUND measurement was found to be 0.1398 μC/cm{sup 2} indicating its applicability in switching devices. The energy band gap for KZC single crystal was found to be 6.13 eV. Vickers micro-hardness test revealed soft nature of KZC single crystals. - Highlights: • Large sized K{sub 2}ZnCl{sub 4} (KZC) single crystal was grown by Czochralski technique. • It possesses high Curie temperature as 151 °C. • d{sub 33} coefficient was found to be 32 pC/N. • Intrinsic polarization measured by PUND. • Its direct band gap energy was calculated to be 6.13 eV.

  1. Carbon nanotubes grown on bulk materials and methods for fabrication

    Science.gov (United States)

    Menchhofer, Paul A [Clinton, TN; Montgomery, Frederick C [Oak Ridge, TN; Baker, Frederick S [Oak Ridge, TN

    2011-11-08

    Disclosed are structures formed as bulk support media having carbon nanotubes formed therewith. The bulk support media may comprise fibers or particles and the fibers or particles may be formed from such materials as quartz, carbon, or activated carbon. Metal catalyst species are formed adjacent the surfaces of the bulk support material, and carbon nanotubes are grown adjacent the surfaces of the metal catalyst species. Methods employ metal salt solutions that may comprise iron salts such as iron chloride, aluminum salts such as aluminum chloride, or nickel salts such as nickel chloride. Carbon nanotubes may be separated from the carbon-based bulk support media and the metal catalyst species by using concentrated acids to oxidize the carbon-based bulk support media and the metal catalyst species.

  2. Scintillation properties of Zr co-doped Ce:(Gd, La)_2Si_2O_7 grown by the Czochralski process

    International Nuclear Information System (INIS)

    Murakami, Rikito; Kurosawa, Shunsuke; Shoji, Yasuhiro; Jary, Vitezslav; Ohashi, Yuji; Pejchal, Jan; Yokota, Yuui; Kamada, Kei; Nikl, Martin; Yoshikawa, Akira

    2016-01-01

    (Gd_0_._7_5,Ce_0_._0_1_5,La_0_._2_3_5)_2Si_2O_7 (Ce:La-GPS) single crystals co-doped with 0, 100, 200, 500 and 1000 ppm Zr were grown by the Czochralski process, and their scintillation properties were investigated. We investigated the co-doping effect of a stable tetravalent ion in Ce:La-GPS for the first time. The scintillation decay times in the faster component were shortened with increasing the Zr concentration. While the non-co-doped sample showed ∼63 ns day time, the Zr 100, 200, 500 and 1000 ppm co-doped samples showed ∼61, ∼59, ∼57, ∼54 ns, respectively. Additionally, light output, photon nonproportional response (PNR) and other optical properties were investigated. - Highlights: • Czochralski growth of Ce:(Gd,La)_2Si_2O_7 single crystals. • Co-doping effect of a stable tetravalent ion in Ce:(Gd,La)_2Si_2O_7 system. • Photon nonproportional response of Zr co-doped Ce:(Gd,La)_2Si_2O_7.

  3. X-ray Topographic Investigations of Domain Structure in Czochralski Grown PrxLa1-xAlO3 Crystals

    International Nuclear Information System (INIS)

    Wieteska, K.; Wierzchowski, W.; Malinowska, A.; Turczynski, S.; Pawlak, D.A.; Lukasiewicz, T.; Lefeld-Sosnowska, M.; Graeff, W.

    2010-01-01

    In the present paper X-ray diffraction topographic techniques were applied to a number of samples cut from Czochralski grown Pr x La 1-x AlO 3 crystals with different ratio of praseodymium and lanthanum. Conventional and synchrotron X-ray topographic investigations revealed differently developed domain structures dependent on the composition of mixed praseodymium lanthanum aluminium perovskites. Some large mosaic blocks were observed together with the domains. In the best crystals, X-ray topographs revealed striation fringes and individual dislocations inside large domains. Synchrotron topographs allowed us to indicate that the domains correspond to three different crystallographic planes, and to evaluate the lattice misorientation between domains in the range of 20-50 arc min (authors)

  4. A study on carbon incorporation in semi-insulating GaAs crystals grown by the vapor pressure controlled Czochralski technique (VCz). Pt. I. Experiments and Results

    Energy Technology Data Exchange (ETDEWEB)

    Jacob, K.; Frank, C.; Neubert, M.; Rudolph, P. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); Ulrici, W. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); Paul-Drude-Inst. fuer Festkoerperelektronik, Berlin (Germany); Jurisch, M. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); Freiberger Compound Materials GmbH, Freiberg (Germany); Korb, J. [Institut fuer Kristallzuechtung im Forschungsverbund Berlin e.V. (IKZ) (Germany); GTT Technologies, Freiberg (Germany)

    2000-07-01

    In the past it has been demonstrated that the carbon concentration of large semi-insulating (SI) GaAs single crystals grown by the conventional liquid encapsulation Czochralski (LEC) technique can be controlled by several methods including variations of growth parameters. It was the aim of the present paper to clarify which of the relationships of LEC growth could be used for a carbon control in the VCz-method characterized by the application of an inner chamber made from graphite to avoid selective As evaporation. In detail this comprised a study of the influence of several growth parameters like the water content of the boric oxide, the composition of the working atmosphere, the gas flow, a titanium gettering and additions of gallium oxide. As a result, for the first time carbon concentrations down to {approx} 10{sup 14} cm{sup -3} were obtained in 3{sup ''} (75 mm) diameter VCz crystals. (orig.)

  5. Epitaxially Grown Layered MFI–Bulk MFI Hybrid Zeolitic Materials

    KAUST Repository

    Kim, Wun-gwi

    2012-11-27

    The synthesis of hybrid zeolitic materials with complex micropore-mesopore structures and morphologies is an expanding area of recent interest for a number of applications. Here we report a new type of hybrid zeolite material, composed of a layered zeolite material grown epitaxially on the surface of a bulk zeolite material. Specifically, layered (2-D) MFI sheets were grown on the surface of bulk MFI crystals of different sizes (300 nm and 10 μm), thereby resulting in a hybrid material containing a unique morphology of interconnected micropores (∼0.55 nm) and mesopores (∼3 nm). The structure and morphology of this material, referred to as a "bulk MFI-layered MFI" (BMLM) material, was elucidated by a combination of XRD, TEM, HRTEM, SEM, TGA, and N2 physisorption techniques. It is conclusively shown that epitaxial growth of the 2-D layered MFI sheets occurs in at least two principal crystallographic directions of the bulk MFI crystal and possibly in the third direction as well. The BMLM material combines the properties of bulk MFI (micropore network and mechanical support) and 2-D layered MFI (large surface roughness, external surface area, and mesoporosity). As an example of the uses of the BMLM material, it was incorporated into a polyimide and fabricated into a composite membrane with enhanced permeability for CO2 and good CO2/CH4 selectivity for gas separations. SEM-EDX imaging and composition analysis showed that the polyimide and the BMLM interpenetrate into each other, thereby forming a well-adhered polymer/particle microstructure, in contrast with the defective interfacial microstructure obtained using bare MFI particles. Analysis of the gas permeation data with the modified Maxwell model also allows the estimation of the effective volume of the BMLM particles, as well as the CO2 and CH4 gas permeabilities of the interpenetrated layer at the BMLM/polyimide interface. © 2012 American Chemical Society.

  6. Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

    International Nuclear Information System (INIS)

    Jung, Y. J.; Kim, W. K.; Jung, J. H.

    2014-01-01

    The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

  7. Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Y. J.; Kim, W. K.; Jung, J. H. [Yeungnam University, Gyeongsan (Korea, Republic of)

    2014-08-15

    The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

  8. Factors affecting stress distribution and displacements in crystals III-V grown by Czochralski method with liquid encapsulation

    International Nuclear Information System (INIS)

    Schvezov, C.E.; Samarasekera, I.; Weinberg, F.

    1988-01-01

    A mathematical model based on the finite element method for calculating temperature and shear stress distributions in III-V crystals grown by LEC technique was developed. The calculated temperature are in good agreements with the experimental measurements. The shear stress distribution was calculated for several environmental conditions. The results showed that the magnitude and the distribution of shear stresses are highly sensitive to the crystal environment, including thickness and temperature distribution in boron oxides and the gas. The shear stress is also strongly influenced by interface curvature and cystals radius. (author) [pt

  9. Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing

    International Nuclear Information System (INIS)

    Londos, C. A.; Andrianakis, A.; Emtsev, V.; Ohyama, H.

    2009-01-01

    The annealing behavior of the oxygen and carbon impurities in Czochralski grown silicon (Cz-Si) was investigated in electron- and neutron-irradiated materials. The irradiated samples were subjected to isochronal anneals of up to ∼1000 deg. C, and the evolution of oxygen and carbon concentrations was monitored by means of infrared spectroscopy from the amplitudes of the 1106 and 605 cm -1 bands of the two impurities correspondingly. It was found that the electron irradiation does not affect the temperature of annealing of oxygen, although in the neutron-irradiated samples the oxygen band begins to decay in the spectra at a lower temperature than that in the nonirradiated samples. This behavior could be determined by supersaturation of vacancies mainly liberated from disordered regions in the latter material. This assists the oxygen aggregation process. Regarding carbon evolution, it was found that in the irradiated samples the annealing out of the 605 cm -1 band occurs at a lower temperature than that of the nonirradiated samples. Prior to the onset of decay of the 605 cm -1 band an inverse annealing stage was observed in the irradiated samples, indicating partial restoration of substitutional carbon. The general behavior was discussed with respect to the supersaturation of intrinsic defects, mainly self-interstitials. As a result, large C N (Si I ) M complexes are formed. There are two processes running in parallel: the recovery of substitutional carbon from carbon-related defects and C N (Si I ) M complexes and the transformation of C N (Si I ) M complexes to SiC-based precipitates. Noticeably, in electron-irradiated Ge-doped Si the inverse annealing stage of substitutional carbon is suppressed. Furthermore, our results showed that the Ge doping of Cz-Si of up to 2x10 20 cm -3 does not practically affect the temperature at which oxygen and carbon are completely lost in irradiated Cz-Si:Ge.

  10. Structure and thermal expansion of Ca9Gd(VO4)7: A combined powder-diffraction and dilatometric study of a Czochralski-grown crystal

    Science.gov (United States)

    Paszkowicz, Wojciech; Shekhovtsov, Alexei; Kosmyna, Miron; Loiko, Pavel; Vilejshikova, Elena; Minikayev, Roman; Romanowski, Przemysław; Wierzchowski, Wojciech; Wieteska, Krzysztof; Paulmann, Carsten; Bryleva, Ekaterina; Belikov, Konstantin; Fitch, Andrew

    2017-11-01

    Materials of the Ca9RE(VO4)7 (CRVO) formula (RE = rare earth) and whitlockite-related structures are considered for applications in optoelectronics, e.g., in white-light emitting diodes and lasers. In the CRVO structure, the RE atoms are known to share the site occupation with Ca atoms at two or three among four Ca sites, with partial occupancy values depending on the choice of the RE atom. In this work, the structure and quality of a Czochralski-grown crystal of this family, Ca9Gd(VO4)7 (CGVO), are studied using X-ray diffraction methods. The room-temperature structure is refined using the powder diffraction data collected at a high-resolution synchrotron beamline ID22 (ESRF, Grenoble); for comparison purposes, a laboratory diffraction pattern was collected and analyzed, as well. The site occupancies are discussed on the basis of comparison with literature data of isostructural synthetic crystals of the CRVO series. The results confirm the previously reported site-occupation scheme and indicate a tendency of the CGVO compound to adopt a Gd-deficient composition. Moreover, the thermal expansion coefficient is determined for CGVO as a function of temperature in the 302-1023 K range using laboratory diffraction data. Additionally, for CGVO and six other single crystals of the same family, thermal expansion is studied in the 298-473 K range, using the dilatometric data. The magnitude and anisotropy of thermal expansion, being of importance for laser applications, are discussed for these materials.

  11. Optical and Electrical Characterization of Melt-Grown Bulk Indium Gallium Arsenide and Indium Arsenic Phosphide Alloys

    Science.gov (United States)

    2011-03-01

    spectrum, photoluminescence (PL), and refractive index measurements. Other methods such as infrared imagery and micro probe wavelength dispersing ...States. AFIT/DS/ENP/11-M02 OPTICAL AND ELECTRICAL CHARACTERIZATION OF MELT- GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ...CHARACTERIZATION OF MELT-GROWN BULK INDIUM GALLIUM ARSENIDE AND INDIUM ARSENIC PHOSPHIDE ALLOYS Jean Wei, BS, MS Approved

  12. Gas selectivity of SILAR grown CdS nano-bulk junction

    Science.gov (United States)

    Jayakrishnan, R.; Nair, Varun G.; Anand, Akhil M.; Venugopal, Meera

    2018-03-01

    Nano-particles of cadmium sulphide were deposited on cleaned copper substrate by an automated sequential ionic layer adsorption reaction (SILAR) system. The grown nano-bulk junction exhibits Schottky diode behavior. The response of the nano-bulk junction was investigated under oxygen and hydrogen atmospheric conditions. The gas response ratio was found to be 198% for Oxygen and 34% for Hydrogen at room temperature. An increase in the operating temperature of the nano-bulk junction resulted in a decrease in their gas response ratio. A logarithmic dependence on the oxygen partial pressure to the junction response was observed, indicating a Temkin isothermal behavior. Work function measurements using a Kelvin probe demonstrate that the exposure to an oxygen atmosphere fails to effectively separate the charges due to the built-in electric field at the interface. Based on the benefits like simple structure, ease of fabrication and response ratio the studied device is a promising candidate for gas detection applications.

  13. Electrical and structural characterization of as-grown and annealed hydrothermal bulk ZnO

    International Nuclear Information System (INIS)

    Kassier, G. H.; Hayes, M.; Auret, F. D.; Mamor, M.; Bouziane, K.

    2007-01-01

    Hall effect measurements in the range 20-370 K on as-grown and annealed hydrothermal bulk ZnO have been performed. The bulk conductivity in the highly resistive as-grown sample was found to decrease and then increase after annealing at 550 deg. C and 930 deg. C, respectively. The conduction in the as-grown material is attributed to a deep donor which is replaced by a much shallower donor after annealing at 930 deg. C. Annealing at both temperatures also produced strong surface conduction effects. Nondegenerate low-mobility surface conduction dominated the electrical properties of the sample annealed at 550 deg. C, while a degenerate surface channel was formed after annealing at 930 deg. C. In addition, Rutherford backscattering and channeling spectrometry (RBS/C) was used to assess the effect of annealing on the crystalline quality of the samples. RBS/C measurements reveal that annealing at 930 deg. C leads to significant improvement of the crystalline quality of the material, while annealing at 550 deg. C results in the segregation of a nonchanneling impurity at the surface

  14. Optical characteristics of novel bulk and nanoengineered laser host materials

    Science.gov (United States)

    Prasad, Narasimha S.; Sova, Stacey; Kelly, Lisa; Bevan, Talon; Arnold, Bradley; Cooper, Christopher; Choa, Fow-Sen; Singh, N. B.

    2018-02-01

    The hexagonal apatite single crystals have been investigated for their applications as laser host materials. Czochralksi and flux growth methods have been utilized to obtain single crystals. For low temperature processing (useful properties as laser hosts and bone materials. Calcium lanthanum silicate (Nd-doped) and lanthanum aluminate material systems were studied in detail. Nanoengineered calcium and lanthanum based silicates were synthesized by a solution method and their optical and morphological characteristics were compared with Czochralski grown bulk hydroxyapatite single crystals. Materials were evaluated by absorbance, fluorescence and Raman characteristics. Neodymium, iron and chromium doped crystals grown by a solution method showed weak but similar optical properties to that of Czochralski grown single crystals.

  15. Processing of n{sup +}/p{sup −}/p{sup +} strip detectors with atomic layer deposition (ALD) grown Al{sub 2}O{sub 3} field insulator on magnetic Czochralski silicon (MCz-si) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Härkönen, J., E-mail: jaakko.harkonen@helsinki.fi [Helsinki Institute of Physics (Finland); Tuovinen, E. [Helsinki Institute of Physics (Finland); VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Luukka, P.; Gädda, A.; Mäenpää, T.; Tuominen, E.; Arsenovich, T. [Helsinki Institute of Physics (Finland); Junkes, A. [Institute for Experimental Physics, University of Hamburg (Germany); Wu, X. [VTT Technical Research Centre of Finland, Microsystems and Nanoelectronics (Finland); Picosun Oy, Tietotie 3, FI-02150 Espoo Finland (Finland); Li, Z. [School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105 (China)

    2016-08-21

    Detectors manufactured on p-type silicon material are known to have significant advantages in very harsh radiation environment over n-type detectors, traditionally used in High Energy Physics experiments for particle tracking. In p-type (n{sup +} segmentation on p substrate) position-sensitive strip detectors, however, the fixed oxide charge in the silicon dioxide is positive and, thus, causes electron accumulation at the Si/SiO{sub 2} interface. As a result, unless appropriate interstrip isolation is applied, the n-type strips are short-circuited. Widely adopted methods to terminate surface electron accumulation are segmented p-stop or p-spray field implantations. A different approach to overcome the near-surface electron accumulation at the interface of silicon dioxide and p-type silicon is to deposit a thin film field insulator with negative oxide charge. We have processed silicon strip detectors on p-type Magnetic Czochralski silicon (MCz-Si) substrates with aluminum oxide (Al{sub 2}O{sub 3}) thin film insulator, grown with Atomic Layer Deposition (ALD) method. The electrical characterization by current–voltage and capacitance−voltage measurement shows reliable performance of the aluminum oxide. The final proof of concept was obtained at the test beam with 200 GeV/c muons. For the non-irradiated detector the charge collection efficiency (CCE) was nearly 100% with a signal-to-noise ratio (S/N) of about 40, whereas for the 2×10{sup 15} n{sub eq}/cm{sup 2} proton irradiated detector the CCE was 35%, when the sensor was biased at 500 V. These results are comparable with the results from p-type detectors with the p-spray and p-stop interstrip isolation techniques. In addition, interestingly, when the aluminum oxide was irradiated with Co-60 gamma-rays, an accumulation of negative fixed oxide charge in the oxide was observed.

  16. LSA Large Area Silicon Sheet Task Continuous Czochralski Process Development

    Science.gov (United States)

    Rea, S. N.

    1979-01-01

    A commercial Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a small, in-situ premelter with attendant silicon storage and transport mechanisms. Using a vertical, cylindrical graphite heater containing a small fused quartz test tube linear from which the molten silicon flowed out the bottom, approximately 83 cm of nominal 5 cm diamter crystal was grown with continuous melt addition furnished by the test tube premelter. High perfection crystal was not obtained, however, due primarily to particulate contamination of the melt. A major contributor to the particulate problem was severe silicon oxide buildup on the premelter which would ultimately drop into the primary melt. Elimination of this oxide buildup will require extensive study and experimentation and the ultimate success of continuous Czochralski depends on a successful solution to this problem. Economically, the continuous Czochralski meets near-term cost goals for silicon sheet material.

  17. Two-dimensional analysis of axial segregation in batchwise and continuous Czochralski process

    Science.gov (United States)

    Hoe Wang, Jong; Hyun Kim, Do; Yoo, Hak-Do

    1999-03-01

    Transient two-dimensional convection-diffusion model has been developed to simulate the segregation phenomena in batchwise and continuous Czochralski process. Numerical simulations have been performed using the finite element method and implicit Euler time integration. The mesh deformation due to the change of the melt depth in batchwise Czochralski process was considered. Experimental values of the growth and system parameters for Czochralski growth of boron-doped, 4-in silicon single crystal were used in the numerical calculations. The experimental axial segregation in batchwise Czochralski process can be described successfully using convection-diffusion model. It has been demonstrated with this model that silicon single crystal with uniform axial dopant concentration can be grown and radial segregation can be suppressed in the continuous Czochralski process.

  18. Silicon crystal growth using a liquid-feeding Czochralski method

    Science.gov (United States)

    Shiraishi, Yutaka; Kurosaka, Shoei; Imai, Masato

    1996-09-01

    Silicon single crystals with uniformity along the growth direction were grown using a new continuous Czochralski (CCZ) method. Polycrystalline silicon rods used as charge materials are melted by carbon heaters over a crucible without contact between the raw material and other substances. Using this method, silicon crystals with diameters as large as 6 or 8 inch and good uniformity along the growth direction were grown.

  19. Two-Crucible Czochralski Process

    Science.gov (United States)

    Fiegl, G.; Torbet, W.

    1985-01-01

    Scheme for continuous melt replenishment increases capacity of Czochralski crystal-growing furnace. Replenishing and drawing crucibles of improved Czochralski apparatus connected by heated quartz siphon. When doped silicon added to replenishing crucible, liquid silicon flows into drawing crucible, equalizing two melt levels. Addition of new material automatically controlled in response to optically sensed melt level. Results of this semicontinuous operation higher production speed, lower cost, and good control of crystal quality.

  20. Oscillatory convection in low aspect ratio Czochralski melts

    Science.gov (United States)

    Anselmo, A.; Prasad, V.; Koziol, J.; Gupta, K. P.

    1993-11-01

    Modeling of the crucible in bulk crystal growth simulations as a right circular cylinder may be adequate for high aspect ratio melts but this may be unrealistic when the melt height is low. Low melt height is a unique feature of a solid feed continuous Czochralski growth process for silicon single crystals currently under investigation. At low melt heights, the crucible bottom curvature has a dampening effect on the buoyancy-induced oscillations, a source of inhomogeneities in the grown crystal. The numerical results demonstrate how the mode of convection changes from vertical wall-dominated recirculating flows to Benard convection as the aspect ratio is lowered. This phenomenon is strongly dependent on the boundary condition at the free surface of the melt, which has been generally considered to be either adiabatic or radiatively cooled. A comparison of the flow oscillations in crucibles with and without curved bottoms at aspect ratios in the range of 0.25 to 0.50, and at realistic Grashof numbers (10 7 < Gr < 10 8) illustrate that changing the shape of the crucible may be an effective means of suppressing oscillations and controlling the melt flow.

  1. A continuous Czochralski silicon crystal growth system

    Science.gov (United States)

    Wang, C.; Zhang, H.; Wang, T. H.; Ciszek, T. F.

    2003-03-01

    Demand for large silicon wafers has driven the growth of silicon crystals from 200 to 300 mm in diameter. With the increasing silicon ingot sizes, melt volume has grown dramatically. Melt flow becomes more turbulent as melt height and volume increase. To suppress turbulent flow in a large silicon melt, a new Czochralski (CZ) growth furnace has been designed that has a shallow melt. In this new design, a crucible consists of a shallow growth compartment in the center and a deep feeding compartment around the periphery. Two compartments are connected with a narrow annular channel. A long crystal may be continuously grown by feeding silicon pellets into the dedicated feeding compartment. We use our numerical model to simulate temperature distribution and velocity field in a conventional 200-mm CZ crystal growth system and also in the new shallow crucible CZ system. By comparison, advantages and disadvantages of the proposed system are observed, operating conditions are determined, and the new system is improved.

  2. Eliminating Light-Induced Degradation in Commercial p-Type Czochralski Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Brett Hallam

    2017-12-01

    Full Text Available This paper discusses developments in the mitigation of light-induced degradation caused by boron-oxygen defects in boron-doped Czochralski grown silicon. Particular attention is paid to the fabrication of industrial silicon solar cells with treatments for sensitive materials using illuminated annealing. It highlights the importance and desirability of using hydrogen-containing dielectric layers and a subsequent firing process to inject hydrogen throughout the bulk of the silicon solar cell and subsequent illuminated annealing processes for the formation of the boron-oxygen defects and simultaneously manipulate the charge states of hydrogen to enable defect passivation. For the photovoltaic industry with a current capacity of approximately 100 GW peak, the mitigation of boron-oxygen related light-induced degradation is a necessity to use cost-effective B-doped silicon while benefitting from the high-efficiency potential of new solar cell concepts.

  3. Study of optical properties of bulk GaN crystals grown by HVPE

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Hong; Ren, Guoqiang; Zhou, Taofei; Tian, Feifei; Xu, Yu; Zhang, Yumin; Wang, Mingyue; Zhang, Zhiqiang [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Cai, Demin [Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China); Wang, Jianfeng [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China); Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2016-07-25

    We investigated the optical properties of a series of GaN samples sliced from the same bulk crystal grown using hydride vapor phase epitaxy. The high crystalline quality of the samples was evaluated using cathodoluminescence measurements, and the dislocation density ranged from 2.4 × 10{sup 6} to 2.3 × 10{sup 5} cm{sup −2}. The impurity concentration was determined using secondary-ion mass spectroscopy, and photoluminescence (PL) measurements were conducted in the range of 3–300 K. We did not find a correlation between the O or C impurities and the weak yellow luminescence (YL) band. As the dislocation density decreased, the intensity of the band edge emission increased and that of the YL band decreased. A competition between the two-electron satellite lines correlated to Si and the YL band was also observed in the low-temperature PL spectra, which demonstrated that the Si impurity also plays an important role in the weak YL band of these GaN samples. These results indicate that the Si donors around the dislocations, as reasonable sources of shallow donors, will recombine with possible deep acceptors and finally respond with the YL. - Highlights: • The investigated samples were sliced from the same bulk crystal. • No correlation between the O or C impurities and the weak YL band is observed. • A well-regulated relationship between the YL band and the dislocations is found. • A competition between the TES-Si lines and the YL band is discussed. • The dislocations trapping Si impurity is suggested to be responsible for YL band.

  4. Structural characterization of bulk GaN crystals grown under high hydrostatic pressure

    Science.gov (United States)

    Liliental-Weber, Zuzanna; Kisielowski, C.; Ruvimov, S.; Chen, Y.; Washburn, J.; Grzegory, I.; Bockowski, M.; Jun, J.; Porowski, S.

    1996-09-01

    This paper describes TEM characterization of bulk GaN crystals grown at 1500-1800Kin the form of plates from a solution of atomic nitrogen in liquid gallium under high nitrogen pressure (up to 20 kbars). The x-ray rocking curves for these crystals were in the range of 20-30 arc-sec. The plate thickness along the c axis was about 100 times smaller than the nonpolar growth directions. A substantial difference in material quality was observed on the opposite sides of the plates normal to the c direction. On one side the surface was atomically flat, while on the other side the surface was rough, with pyramidal features up to 100 nm high. The polarity of the crystals was determined using convergent-beam electron diffraction. The results showed that, regarding the long bond between Ga and N along the c-axis, Ga atoms were found to be closer to the flat side of the crystal, while N atoms were found to be closer to the rough side. Near the rough side, within 1/10 to 1/4 of the plate thickness, there was a high density of planar defects (stacking faults and dislocation loops decorated by Ga/void precipitates). A model explaining the defect formation is proposed.

  5. Scintillation properties of Zr co-doped Ce:(Gd, La).sub.2./sub.Si.sub.2./sub.O.sub.7./sub. grown by the Czochralski process

    Czech Academy of Sciences Publication Activity Database

    Murakami, R.; Kurosawa, S.; Shoji, Y.; Jarý, Vítězslav; Ohashi, Y.; Pejchal, Jan; Yokota, Y.; Kamada, K.; Nikl, Martin; Yoshikawa, A.

    2016-01-01

    Roč. 90, Jul (2016), s. 162-165 ISSN 1350-4487. [International Conference on Luminescent Detectors and Transformers of Ionizing Radiation (LUMDETR). Tartu (Estonsko), 20.09.2015-25.09.2015] R&D Projects: GA MŠk(CZ) LH14266 Institutional support: RVO:68378271 Keywords : scintillator * pyrosilicate * La- GPS * Czochralski process * co-doping effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.442, year: 2016

  6. Das Stefan-Problem bei der Kristallzucht nach Czochralski

    OpenAIRE

    Kopetsch, H.

    1987-01-01

    The shape of the crystal-melt interface in Czochralski crystal growth may strongly influence the quality of the grown crystal. Thus a numerical algorithm has been developed which allows us to study the dynamics of this interface subject to various growth conditions. Especially the hydrodynamics in the melt is taken into account. Mathematically, a moving boundary problem (Stefan problem) has to be solved along with the flow and temperature field in melt and crystal which is treated by the meth...

  7. LSSA large area silicon sheet task continuous Czochralski process development

    Science.gov (United States)

    Rea, S. N.

    1978-01-01

    A Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a premelter to provide molten silicon flow into the primary crucible. The basic furnace is operational and several trial crystals were grown in the batch mode. Numerous premelter configurations were tested both in laboratory-scale equipment as well as in the actual furnace. The best arrangement tested to date is a vertical, cylindrical graphite heater containing small fused silicon test tube liner in which the incoming silicon is melted and flows into the primary crucible. Economic modeling of the continuous Czochralski process indicates that for 10 cm diameter crystal, 100 kg furnace runs of four or five crystals each are near-optimal. Costs tend to asymptote at the 100 kg level so little additional cost improvement occurs at larger runs. For these conditions, crystal cost in equivalent wafer area of around $20/sq m exclusive of polysilicon and slicing was obtained.

  8. The intrinsic gettering in neutron irradiation Czochralski-silicon

    CERN Document Server

    Li Yang Xian; Niu Ping Juan; Liu Cai Chi; Xu Yue Sheng; Yang Deren; Que Duan Lin

    2002-01-01

    The intrinsic gettering in neutron irradiated Czochralski-silicon is studied. The result shows that a denuded zone at the surface of the neutron irradiated Czochralski-silicon wafer may be formed through one-step short-time annealing. The width of the denuded zone is dependent on the annealing temperature and the dose of neutron irradiation, while it is irrelated to the annealing time in case the denuded zone is formed. The authors conclude that the interaction between the defects induced by neutron irradiation and the oxygen in the silicon accelerates the oxygen precipitation in the bulk, and becomes the dominating factor of the quick formation of intrinsic gettering. It makes the effect of thermal history as the secondary factor

  9. Characterization of Czochralski Silicon Detectors

    OpenAIRE

    Luukka, Panja-Riina; Haerkoenen, Jaakko

    2012-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

  10. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

    OpenAIRE

    Monemar, Bo; Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder; Lindgren, David; Samuelson, Lars; Ni, Xianfeng; Morkoç, Hadis; Paskova, Tanya; Bi, Zhaoxia; Ohlsson, Jonas

    2011-01-01

    Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 1018cm-3 to well above 1019 cm-3. The samples were grown with MOCVD at reduced pressure on low defect density m-plane bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9 eV to 3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependenc...

  11. Characterization of Czochralski silicon detectors

    OpenAIRE

    Luukka, Panja-Riina

    2006-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting ...

  12. Nanomechanical properties of thick porous silicon layers grown on p- and p+-type bulk crystalline Si

    International Nuclear Information System (INIS)

    Charitidis, C.A.; Skarmoutsou, A.; Nassiopoulou, A.G.; Dragoneas, A.

    2011-01-01

    Highlights: → The nanomechanical properties of bulk crystalline Si. → The nanomechanical properties of porous Si. → The elastic-plastic deformation of porous Si compared to bulk crystalline quantified by nanoindentation data analysis. - Abstract: The nanomechanical properties and the nanoscale deformation of thick porous Si (PSi) layers of two different morphologies, grown electrochemically on p-type and p+-type Si wafers were investigated by the depth-sensing nanoindentation technique over a small range of loads using a Berkovich indenter and were compared with those of bulk crystalline Si. The microstructure of the thick PSi layers was characterized by field emission scanning electron microscopy. PSi layers on p+-type Si show an anisotropic mesoporous structure with straight vertical pores of diameter in the range of 30-50 nm, while those on p-type Si show a sponge like mesoporous structure. The effect of the microstructure on the mechanical properties of the layers is discussed. It is shown that the hardness and Young's modulus of the PSi layers exhibit a strong dependence on their microstructure. In particular, PSi layers with the anisotropic straight vertical pores show higher hardness and elastic modulus values than sponge-like layers. However, sponge-like PSi layers reveal less plastic deformation and higher wear resistance compared with layers with straight vertical pores.

  13. Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Monemar, Bo [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Paskov, Plamen; Pozina, Galia; Hemmingsson, Carl; Bergman, Peder [Department of Physics, Chemistry and Biology, Linkoeping University, 581 83 Linkoeping (Sweden); Lindgren, David; Samuelson, Lars [Solid State Physics-The Nanometer Structure Consortium, Lund University, Box 118, 221 00 Lund (Sweden); Ni, Xianfeng; Morkoc, Hadis [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284-3072 (United States); Paskova, Tanya [Kyma Technologies Inc., Raleigh, North Carolina 27617 (United States); Bi, Zhaoxia; Ohlsson, Jonas [Glo AB, Ideon Science Park, Scheelevaegen 17, 223 70 Lund (Sweden)

    2011-07-15

    Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10{sup 18} cm{sup -3} to above 10{sup 20} cm{sup -3}. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50 K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3 eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependence of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23 eV. Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly discussed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. High Quality, Low Cost Bulk Gallium Nitride Substrates Grown by the Electrochemical Solution Growth Method

    Energy Technology Data Exchange (ETDEWEB)

    Seacrist, Michael [SunEdison Inc., St. Peters, MO (United States)

    2017-08-15

    The objective of this project was to develop the Electrochemical Solution Growth (ESG) method conceived / patented at Sandia National Laboratory into a commercially viable bulk gallium nitride (GaN) growth process that can be scaled to low cost, high quality, and large area GaN wafer substrate manufacturing. The goal was to advance the ESG growth technology by demonstrating rotating seed growth at the lab scale and then transitioning process to prototype commercial system, while validating the GaN material and electronic / optical device quality. The desired outcome of the project is a prototype commercial process for US-based manufacturing of high quality, large area, and lower cost GaN substrates that can drive widespread deployment of energy efficient GaN-based power electronic and optical devices. In year 1 of the project (Sept 2012 – Dec 2013) the overall objective was to demonstrate crystalline GaN growth > 100um on a GaN seed crystal. The development plan included tasks to demonstrate and implement a method for purifying reagent grade salts, develop the reactor 1 process for rotating seed Electrochemical Solution Growth (ESG) of GaN, grow and characterize ESG GaN films, develop a fluid flow and reaction chemistry model for GaN film growth, and design / build an improved growth reactor capable of scaling to 50mm seed diameter. The first year’s project objectives were met in some task areas including salt purification, film characterization, modeling, and reactor 2 design / fabrication. However, the key project objective of the growth of a crystalline GaN film on the seed template was not achieved. Amorphous film growth on the order of a few tenths of a micron has been detected with a film composition including Ga and N, plus several other impurities originating from the process solution and hardware. The presence of these impurities, particularly the oxygen, has inhibited the demonstration of crystalline GaN film growth on the seed template. However, the

  15. Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

    International Nuclear Information System (INIS)

    Mtangi, W.; Nel, J.M.; Auret, F.D.; Chawanda, A.; Diale, M.; Nyamhere, C.

    2012-01-01

    We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8±0.3) meV that has been suggested as Zn i related and possibly H-complex related and (54.5±0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X Zn . The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) . Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60×10 17 cm −3 at 200 °C to 4.37×10 18 cm -3 at 800 °C.

  16. Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Mtangi, W., E-mail: wilbert.mtangi@up.ac.za [University of Pretoria, Physics Department, Pretoria 0002 (South Africa); Nel, J.M.; Auret, F.D.; Chawanda, A.; Diale, M. [University of Pretoria, Physics Department, Pretoria 0002 (South Africa); Nyamhere, C. [Nelson Mandela Metropolitan University, Physics Department, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8{+-}0.3) meV that has been suggested as Zn{sub i} related and possibly H-complex related and (54.5{+-}0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X{sub Zn}. The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) . Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60 Multiplication-Sign 10{sup 17} cm{sup -3} at 200 Degree-Sign C to 4.37 Multiplication-Sign 10{sup 18} cm{sup -3} at 800 Degree-Sign C.

  17. Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

    International Nuclear Information System (INIS)

    Khromov, S.; Hemmingsson, C.; Monemar, B.; Hultman, L.; Pozina, G.

    2014-01-01

    Freestanding bulk C-doped GaN wafers grown by halide vapor phase epitaxy are studied by optical spectroscopy and electron microscopy. Significant changes of the near band gap (NBG) emission as well as an enhancement of yellow luminescence have been found with increasing C doping from 5 × 10 16 cm −3 to 6 × 10 17 cm −3 . Cathodoluminescence mapping reveals hexagonal domain structures (pits) with high oxygen concentrations formed during the growth. NBG emission within the pits even at high C concentration is dominated by a rather broad line at ∼3.47 eV typical for n-type GaN. In the area without pits, quenching of the donor bound exciton (DBE) spectrum at moderate C doping levels of 1–2 × 10 17 cm −3 is observed along with the appearance of two acceptor bound exciton lines typical for Mg-doped GaN. The DBE ionization due to local electric fields in compensated GaN may explain the transformation of the NBG emission

  18. A comparative study on MOVPE InN grown on Ga- and N-polarity bulk GaN

    International Nuclear Information System (INIS)

    Wang, W.J.; Miwa, H.; Hashimoto, A.; Yamamoto, A.

    2006-01-01

    The influence of substrate polarity on the growth of InN film by MOVPE was investigated using bulk GaN as a substrate. Single-crystalline In- and N-polarity InN films were obtained on Ga- and N-polarity GaN substrate, respectively. Significant difference of the morphologies between the In- and N-polarity InN films was found. For the In-polarity InN film, the morphology was similar to that grown on sapphire substrate. The film surface was consisted of grains with small facets. In contrast, for the N-polarity InN film, the surface was consisted of large hexagonal shape crystal grains with flat surface. The grain size was about 2 μm in diameter on the average, and two-dimensional growth was enhanced obviously for each crystal grain. The influence of the growth temperature on the morphology, polarity, and optical property was also investigated. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Future application of Czochralski crystal pulling for silicon

    Science.gov (United States)

    Matlcok, J. H.

    1985-08-01

    Czochralski (Cz) crystal pulling has been the predominant method used for preparing silicon single crystal for the past twenty years. The fundamental technology used has changed little. However, great strides have been made in learning how to make the crystals bigger and of better quality at ever increasing productivity rates. Currently charge sizes of 50 kg of polycrystal silicon are being used for production and crystals up to ten inches in diameter have been grown without major difficulty. The largest material actually being processed in silicon wafer form is 150 mm (6 inches) in diameter. Growing of crystals in a magnetic field has proved to be particularly useful for microscopic impurity control. Major developments in past years on equipment for Cz crystal pulling have included the automatic growth control of the diameter as well as the starting core of the crystal, the use of magnetic fields and around the crystal puller to supress convection, various recharging schemes for dopant control and the use of continuous liquid feed in the crystal puller. The latter, while far from being a reliable production process, is ideal in concept for major improvement in Cz crystal pulling. The Czochralski process will maintain its dominance of silicon crystal production for many years.

  20. Role of crucible partition in improving Czochralski melt conditions

    Science.gov (United States)

    Jafri, I. H.; Prasad, V.; Anselmo, A. P.; Gupta, K. P.

    1995-09-01

    Many of the inhomogeneities and defects in the crystal grown from a pool of melt are because of the inherent unsteady growth kinetics and flow instabilities of the process. A scaled up version of the Czochralski process induces oscillatory and turbulent conditions in the melt, thereby resulting in the production of non-uniform silicon crystals. This numerical study reveals that a crucible partition shorter than the melt height can significantly improve the melt conditions. The obstruction at the bottom of the crucible is helpful but the variations in heat flux and flow patterns remain random. However, when the obstruction is introduced at the top of the melt, the flow conditions become much more desirable and oscillations are greatly suppressed. It is also found that a full-melt height partition or a double-crucible may not be a good choice. An optimal size of the blockage and its location to produce the most desirable process conditions will depend on the growth parameters including the melt height and the crucible diameter. These findings should be particularly useful in designing a solid polysilicon pellets-feed continuous Czochralski process for Si crystals.

  1. Optimization and characterization of bulk hexagonal boron nitride single crystals grown by the nickel-chromium flux method

    Science.gov (United States)

    Hoffman, Tim

    Hexagonal boron nitride (hBN) is a wide bandgap III-V semiconductor that has seen new interest due to the development of other III-V LED devices and the advent of graphene and other 2-D materials. For device applications, high quality, low defect density materials are needed. Several applications for hBN crystals are being investigated, including as a neutron detector and interference-less infrared-absorbing material. Isotopically enriched crystals were utilized for enhanced propagation of phonon modes. These applications exploit the unique physical, electronic and nanophotonics applications for bulk hBN crystals. In this study, bulk hBN crystals were grown by the flux method using a molten Ni-Cr solvent at high temperatures (1500°C) and atmospheric pressures. The effects of growth parameters, source materials, and gas environment on the crystals size, morphology and purity were established and controlled, and the reliability of the process was greatly improved. Single-crystal domains exceeding 1mm in width and 200microm in thickness were produced and transferred to handle substrates for analysis. Grain size dependence with respect to dwell temperature, cooling rate and cooling temperature were analyzed and modeled using response surface morphology. Most significantly, crystal grain width was predicted to increase linearly with dwell temperature, with single-crystal domains exceeding 2mm in at 1700°C. Isotopically enriched 10B and 11B hBN crystal were produced using a Ni-Cr-B flux method, and their properties investigated. 10B concentration was evaluated using SIMS and correlated to the shift in the Raman peak of the E2g mode. Crystals with enrichment of 99% 10B and >99% 11B were achieved, with corresponding Raman shift peaks at 1392.0 cm-1 and 1356.6 cm-1, respectively. Peak FWHM also decreased as isotopic enrichment approached 100%, with widths as low as 3.5 cm-1 achieved, compared to 8.0 cm-1 for natural abundance samples. Defect selective etching was

  2. Czochralski growth of gallium indium antimonide alloy crystals

    Energy Technology Data Exchange (ETDEWEB)

    Tsaur, S.C.

    1998-02-01

    Attempts were made to grow alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb by the conventional Czochralski process. A transparent furnace was used, with hydrogen purging through the chamber during crystal growth. Single crystal seeds up to about 2 to 5 mole% InSb were grown from seeds of 1 to 2 mole% InSb, which were grown from essentially pure GaSb seeds of the [111] direction. Single crystals were grown with InSb rising from about 2 to 6 mole% at the seed ends to about 14 to 23 mole% InSb at the finish ends. A floating-crucible technique that had been effective in reducing segregation in doped crystals, was used to reduce segregation in Czochralski growth of alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb. Crystals close to the targeted composition of 1 mole% InSb were grown. However, difficulties were encountered in reaching higher targeted InSb concentrations. Crystals about 2 mole% were grown when 4 mole% was targeted. It was observed that mixing occurred between the melts rendering the compositions of the melts; and, hence, the resultant crystal unpredictable. The higher density of the growth melt than that of the replenishing melt could have triggered thermosolutal convection to cause such mixing. It was also observed that the floating crucible stuck to the outer crucible when the liquidus temperature of the replenishing melt was significantly higher than that of the growth melt. The homogeneous Ga{sub 1{minus}x}In{sub x}Sb single crystals were grown successfully by a pressure-differential technique. By separating a quartz tube into an upper chamber for crystal growth and a lower chamber for replenishing. The melts were connected by a capillary tube to suppress mixing between them. A constant pressure differential was maintained between the chambers to keep the growth melt up in the growth chamber. The method was first tested with a low temperature alloy Bi{sub 1{minus}x}Sb{sub x}. Single crystals of Ga{sub 1{minus}x}In{sub x}Sb were grown with uniform

  3. Nonlinear resonance ultrasonic vibrations in Czochralski-silicon wafers

    Science.gov (United States)

    Ostapenko, S.; Tarasov, I.

    2000-04-01

    A resonance effect of generation of subharmonic acoustic vibrations is observed in as-grown, oxidized, and epitaxial silicon wafers. Ultrasonic vibrations were generated into a standard 200 mm Czochralski-silicon (Cz-Si) wafer using a circular ultrasound transducer with major frequency of the radial vibrations at about 26 kHz. By tuning frequency (f) of the transducer within a resonance curve, we observed a generation of intense f/2 subharmonic acoustic mode assigned as a "whistle." The whistle mode has a threshold amplitude behavior and narrow frequency band. The whistle is attributed to a nonlinear acoustic vibration of a silicon plate. It is demonstrated that characteristics of the whistle mode are sensitive to internal stress and can be used for quality control and in-line diagnostics of oxidized and epitaxial Cz-Si wafers.

  4. Denuded zone in Czochralski silicon wafer with high carbon content

    International Nuclear Information System (INIS)

    Chen Jiahe; Yang Deren; Ma Xiangyang; Que Duanlin

    2006-01-01

    The thermal stability of the denuded zone (DZ) created by high-low-high-temperature annealing in high carbon content (H[C]) and low carbon content (L[C]) Czochralski silicon (Cz-Si) has been investigated in a subsequent ramping and isothermal 1050 deg. C annealing. The tiny oxygen precipitates which might occur in the DZ were checked. It was found in the L[C] Cz-Si that the DZ shrank and the density of bulk micro-defects (BMDs) reduced with the increase of time spent at 1050 deg. C. Also, the DZs above 15 μm of thickness present in the H[C] Cz-Si wafers continuously and the density and total volume of BMDs first decreased then increased and finally decreased again during the treatments. Moreover, tiny oxygen precipitates were hardly generated inside the DZs, indicating that H[C] Cz-Si wafers could support the fabrication of integrated circuits

  5. Denuded zone in Czochralski silicon wafer with high carbon content

    Science.gov (United States)

    Chen, Jiahe; Yang, Deren; Ma, Xiangyang; Que, Duanlin

    2006-12-01

    The thermal stability of the denuded zone (DZ) created by high-low-high-temperature annealing in high carbon content (H[C]) and low carbon content (L[C]) Czochralski silicon (Cz-Si) has been investigated in a subsequent ramping and isothermal 1050 °C annealing. The tiny oxygen precipitates which might occur in the DZ were checked. It was found in the L[C] Cz-Si that the DZ shrank and the density of bulk micro-defects (BMDs) reduced with the increase of time spent at 1050 °C. Also, the DZs above 15 µm of thickness present in the H[C] Cz-Si wafers continuously and the density and total volume of BMDs first decreased then increased and finally decreased again during the treatments. Moreover, tiny oxygen precipitates were hardly generated inside the DZs, indicating that H[C] Cz-Si wafers could support the fabrication of integrated circuits.

  6. Detached phenomenon: Its effect on the crystal quality of Ga{sub (1−x)}In{sub x}Sb bulk crystal grown by the VDS technique

    Energy Technology Data Exchange (ETDEWEB)

    Gadkari, Dattatray, E-mail: db.gadkari@gmail.com [Department of Physics, Mithibai College, Mumbai 400056 (India)

    2013-05-15

    Vertical directional solidification (VDS) technique is used on the combined growth principals of the conventional methods since 1994, which leads to the detached growth. For evaluation of the detached growth, five bulk ingots of indium doped gallium–antimonide GaSb:In (In = 0.5, 0.25, 0.15) have been grown – without the seed, without contact to the ampoule wall, without coating and without external pressure. The gap is attributed to compensate the differential thermal dilatation that is grown with the reduced diameter than the diameter of the ampoule. VDS experiments have been proved that the sum of the contact angle and growth angle is large enough to allow detachment without any additional pressure difference under the melt to offset hydrostatic pressure. A meniscus forms at the bottom of the melt, the capillarity effect establishes due to which spontaneous gap could be created by the melt free surface, thus no thermal shear stress and thermo-mechanical stresses at the interface. Detached grown bulk GaSb:In crystals showed superior crystal quality with the highest physical properties and mobility than the crystals grown ever. The axial and radial composition profile of the grown GaSb:In ingots showed variation ≤10%. From the conical region, dislocation density decreases in the growth direction and reaches less than 10{sup 3} cm{sup −2}. - Highlights: ► Detachment: without seed, without ampoule contact, without coating, without external pressure. ► Detached ingot growth samples showed the highest physical properties and the carrier mobility. ► Initial to final transition: in detached growth, dislocations decreases and less than 10{sup 3} cm{sup −2}. ► Detached samples: Raman spectrum shows only TO phonon (110) direction of single orientation. ► Detached ingot: FTIR shows highest transmissions % but decreases on increase doping in samples.

  7. A DLTS study of hydrogen doped czochralski-grown silicon

    Energy Technology Data Exchange (ETDEWEB)

    Jelinek, M. [Infineon Technologies Austria AG, 9500 Villach (Austria); Laven, J.G. [Infineon Technologies AG, 81726 Munich (Germany); Kirnstoetter, S. [Institute of Solid State Physics, Graz University of Technology, 8010 Graz (Austria); Schustereder, W. [Infineon Technologies Austria AG, 9500 Villach (Austria); Schulze, H.-J. [Infineon Technologies AG, 81726 Munich (Germany); Rommel, M. [Fraunhofer Institute of Integrated Systems and Devices IISB, 91058 Erlangen (Germany); Frey, L. [Fraunhofer Institute of Integrated Systems and Devices IISB, 91058 Erlangen (Germany); Chair of Electron Devices, FAU Erlangen-Nuremberg, 91058 Erlangen (Germany)

    2015-12-15

    In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not seen in the impurity-lean FZ reference samples. The additional peak lies about 10–15 μm deeper than the main peak near the projected range of the protons. A DLTS characterization in the depth of the additional peak indicates that it is most likely not caused by classical hydrogen-related donors known also from FZ silicon but by an additional donor complex whose formation is assisted by the presence of silicon self-interstitials.

  8. Silicon Crystal Growth by the Electromagnetic Czochralski (EMCZ) Method

    Science.gov (United States)

    Watanabe, Masahito; Eguchi, Minoru; Hibiya, Taketoshi

    1999-01-01

    A new method for growing silicon crystals by using electromagnetic force to rotate the melt without crucible rotation has been developed. We call it electromagnetic Czochralski (EMCZ) growth. An electromagnetic force in the azimuthal direction is generated in the melt by the interaction between an electric current (I) through the melt in the radial direction and a vertical magnetic field (B). The rotation rate (ωm) of the silicon melt is continuously changed from 0 to over 105 rpm under I = 0 to 8 A and B = 0 to 0.1 T. Thirty-mm-diameter silicon single crystals free of dislocations could be grown under two conditions: I = 2.0 A and B = 0.05 T (ωm = 105 rpm); and I =0.2 A and B = 0.1 T (ωm = 15 rpm). The oxygen concentration in the crystals was 8 ×1017 atoms/cm3 for the high rotation rate and 1×1017 atoms/cm3 for the low rotation rate. The oxygen-concentration distributions in the radial direction in both crystals were more homogeneous than those in the crystals grown by conventional CZ and/or MCZ growth. This new crystal-growth method can be easily adopted for growing large-diameter silicon crystals.

  9. Lifetime degradation of n-type Czochralski silicon after hydrogenation

    Science.gov (United States)

    Vaqueiro-Contreras, M.; Markevich, V. P.; Mullins, J.; Halsall, M. P.; Murin, L. I.; Falster, R.; Binns, J.; Coutinho, J.; Peaker, A. R.

    2018-04-01

    Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys. Status Solidi RRL 11, 1700133 (2017)] that hydrogenation of n-type silicon slices containing relatively large concentrations of carbon and oxygen impurity atoms {[Cs] ≥ 1 × 1016 cm-3 and [Oi] ≥ 1017 cm-3} can produce a family of C-O-H defects, which act as powerful recombination centres reducing the minority carrier lifetime. In this work, evidence of the silicon's lifetime deterioration after hydrogen injection from SiNx coating, which is widely used in solar cell manufacturing, has been obtained from microwave photoconductance decay measurements. We have characterised the hydrogenation induced deep level defects in n-type Czochralski-grown Si samples through a series of deep level transient spectroscopy (DLTS), minority carrier transient spectroscopy (MCTS), and high-resolution Laplace DLTS/MCTS measurements. It has been found that along with the hydrogen-related hole traps, H1 and H2, in the lower half of the gap reported by us previously, hydrogenation gives rise to two electron traps, E1 and E2, in the upper half of the gap. The activation energies for electron emission from the E1 and E2 trap levels have been determined as 0.12, and 0.14 eV, respectively. We argue that the E1/H1 and E2/H2 pairs of electron/hole traps are related to two energy levels of two complexes, each incorporating carbon, oxygen, and hydrogen atoms. Our results show that the detrimental effect of the C-O-H defects on the minority carrier lifetime in n-type Si:O + C materials can be very significant, and the carbon concentration in Czochralski-grown silicon is a key parameter in the formation of the recombination centers.

  10. Solidification interface shape control in a continuous Czochralski silicon growth system

    Science.gov (United States)

    Wang, Chenlei; Zhang, Hui; Wang, Tihu; Zheng, Lili

    2006-01-01

    In a continuous Czochralski (CCZ) growth system with a shallow and replenished melt proposed earlier, large-diameter crystals may be grown at a high pull rate and reduced melt convection. The proposed system consists of two heaters. In this paper, the relationship between the solidification interface and the power levels is established. An interface control algorithm is developed to achieve the desired interface shape by adjusting the power level of the bottom heater. The control algorithm is incorporated into an existing process model, and the efficiency of the control algorithm is tested.

  11. Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Gang [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); Xu, Can; Feldman, Leonard C. [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States); Yakshinskiy, Boris; Wielunski, Leszek; Gustafsson, Torgny [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States); Bloch, Joseph [Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, Piscataway, New Jersey 08854 (United States); NRCN, Beer-Sheva 84190 (Israel); Dhar, Sarit [Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)

    2014-11-10

    We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D{sub 2}O) on the n-type 4H-SiC carbon face (0001{sup ¯}) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D{sub 2}O exposure is proportional to the total D amount at the interface.

  12. REVIEW ARTICLE: Oxygen diffusion and precipitation in Czochralski silicon

    Science.gov (United States)

    Newman, R. C.

    2000-06-01

    The objective of this article is to review our understanding of the properties of oxygen impurities in Czochralski silicon that is used to manufacture integrated circuits (ICs). These atoms, present at a concentration of ~1018 cm-3, occupy bond-centred sites (Oi) in as-grown Si and the jump rate between adjacent sites defines `normal' diffusion for the temperature range 1325 - 330 °C. Anneals at high temperatures lead to the formation of amorphous SiO2 precipitates that act as traps for fast diffusing metallic contaminants, such as Fe and Cu, that may be inadvertently introduced at levels as low as 1011 cm-3. Without this `gettering', there may be severe degradation of fabricated ICs. To accommodate the local volume increase during oxygen precipitation, there is parallel generation of self-interstitials that diffuse away and form lattice defects. High temperature (T > 700 °C) anneals are now well understood. Details of lower temperature processes are still a matter of debate: measurements of oxygen diffusion into or out of the Si surface and Oi atom aggregation have implied enhanced diffusion that has variously been attributed to interactions of Oi atoms with lattice vacancies, self-interstitials, metallic elements, carbon, hydrogen impurities etc. There is strong evidence for oxygen-hydrogen interactions at T continue to decrease as the size of future device features decreases below the lower end of the sub-micron range, currently close to 0.18 µm.

  13. Czochralski method of growing single crystals. State-of-art

    International Nuclear Information System (INIS)

    Bukowski, A.; Zabierowski, P.

    1999-01-01

    Modern Czochralski method of single crystal growing has been described. The example of Czochralski process is given. The advantages that caused the rapid progress of the method have been presented. The method limitations that motivated the further research and new solutions are also presented. As the example two different ways of the technique development has been described: silicon single crystals growth in the magnetic field; continuous liquid feed of silicon crystals growth. (author)

  14. Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth. II - Processing strategies

    Science.gov (United States)

    Derby, J. J.; Brown, R. A.

    1986-01-01

    The pseudosteady-state heat transfer model developed in a previous paper is augmented with constraints for constant crystal radius and melt/solid interface deflection. Combinations of growth rate, and crucible and bottom-heater temperatures are tested as processing parameters for satisfying the constrained thermal-capillary problem over a range of melt volumes corresponding to the sequence occuring during the batchwise Czochralski growth of a small-diameter silicon crystal. The applicability of each processing strategy is judged by the range of existence of the solution, in terms of melt volume and the values of the axial and radial temperature gradients in the crystal.

  15. Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Fengzai; Barnard, Jonathan S.; Zhu, Tongtong; Oehler, Fabrice; Kappers, Menno J.; Oliver, Rachel A., E-mail: rao28@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

    2015-08-24

    A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown to be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness.

  16. Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

    International Nuclear Information System (INIS)

    Tang, Fengzai; Barnard, Jonathan S.; Zhu, Tongtong; Oehler, Fabrice; Kappers, Menno J.; Oliver, Rachel A.

    2015-01-01

    A non-polar m-plane structure consisting of five InGaN/GaN quantum wells (QWs) was grown on ammonothermal bulk GaN by metal-organic vapor phase epitaxy. Surface step bunches propagating through the QW stack were found to accommodate the 2° substrate miscut towards the -c direction. Both large steps with heights of a few tens of nanometres and small steps between one and a few atomic layers in height are observed, the former of which exhibit cathodoluminescence at longer wavelengths than the adjacent m-plane terraces. This is attributed to the formation of semi-polar facets at the steps on which the QWs are shown to be thicker and have higher Indium contents than those in the adjacent m-plane regions. Discrete basal-plane stacking faults (BSFs) were occasionally initiated from the QWs on the main m-plane terraces, but groups of BSFs were frequently observed to initiate from those on the large steps, probably related to the increased strain associated with the locally higher indium content and thickness

  17. Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Skierbiszewski, C.; Wasilewski, Z.R.; Siekacz, M.; Feduniewicz, A.; Perlin, P.; Wisniewski, P.; Borysiuk, J.; Grzegory, I.; Leszczynski, M.; Suski, T.; Porowski, S.

    2005-01-01

    We report on the InGaN multiquantum laser diodes (LDs) made by rf plasma-assisted molecular beam epitaxy (PAMBE). The laser operation at 408 nm is demonstrated at room temperature with pulsed current injections using 50 ns pulses at 0.25% duty cycle. The threshold current density and voltage for the LDs with cleaved uncoated mirrors are 12 kA/cm 2 (900 mA) and 9 V, respectively. High output power of 0.83 W is obtained during pulse operation at 3.6 A and 9.6 V bias with the slope efficiency of 0.35 W/A. The laser structures are deposited on the high-pressure-grown low dislocation bulk GaN substrates taking full advantage of the adlayer enhanced lateral diffusion channel for adatoms below the dynamic metallic cover. Our devices compare very favorably to the early laser diodes fabricated using the metalorganic vapor phase epitaxy technique, providing evidence that the relatively low growth temperatures used in this process pose no intrinsic limitations on the quality of the blue optoelectronic components that can be fabricated using PAMBE

  18. Mathematical modeling and numerical simulation of Czochralski Crystal Growth

    Energy Technology Data Exchange (ETDEWEB)

    Jaervinen, J.; Nieminen, R. [Center for Scientific Computing, Espoo (Finland)

    1996-12-31

    A detailed mathematical model and numerical simulation tools based on the SUPG Finite Element Method for the Czochralski crystal growth has been developed. In this presentation the mathematical modeling and numerical simulation of the melt flow and the temperature distribution in a rotationally symmetric crystal growth environment is investigated. The temperature distribution and the position of the free boundary between the solid and liquid phases are solved by using the Enthalpy method. Heat inside of the Czochralski furnace is transferred by radiation, conduction and convection. The melt flow is governed by the incompressible Navier-Stokes equations coupled with the enthalpy equation. The melt flow is numerically demonstrated and the temperature distribution in the whole Czochralski furnace. (author)

  19. Mathematical modeling and numerical simulation of Czochralski Crystal Growth

    Energy Technology Data Exchange (ETDEWEB)

    Jaervinen, J; Nieminen, R [Center for Scientific Computing, Espoo (Finland)

    1997-12-31

    A detailed mathematical model and numerical simulation tools based on the SUPG Finite Element Method for the Czochralski crystal growth has been developed. In this presentation the mathematical modeling and numerical simulation of the melt flow and the temperature distribution in a rotationally symmetric crystal growth environment is investigated. The temperature distribution and the position of the free boundary between the solid and liquid phases are solved by using the Enthalpy method. Heat inside of the Czochralski furnace is transferred by radiation, conduction and convection. The melt flow is governed by the incompressible Navier-Stokes equations coupled with the enthalpy equation. The melt flow is numerically demonstrated and the temperature distribution in the whole Czochralski furnace. (author)

  20. Deep level transient spectroscopy and minority carrier lifetime study on Ga-doped continuous Czochralski silicon

    Science.gov (United States)

    Yoon, Yohan; Yan, Yixin; Ostrom, Nels P.; Kim, Jinwoo; Rozgonyi, George

    2012-11-01

    Continuous-Czochralski (c-Cz) crystal growth has been suggested as a viable technique for the fabrication of photovoltaic Si wafers due to its low resistivity variation of any dopant, independent of segregation, compared to conventional Cz. In order to eliminate light induced degradation due to boron-oxygen traps in conventional p-type silicon wafers, gallium doped wafers have been grown by c-Cz method and investigated using four point probe, deep level transient spectroscopy (DLTS), and microwave-photoconductance decay. Iron-gallium related electrically active defects were identified using DLTS as the main lifetime killers responsible for reduced non-uniform lifetimes in radial and axial positions of the c-Cz silicon ingot. A direct correlation between minority carrier lifetime and the concentration of electrically active Fe-Ga pairs was established.

  1. Characterization of GaInSb crystal obtained by Czochralski Method

    International Nuclear Information System (INIS)

    Streicher, M.; Costa, E.M.; Dedavid, B.A.; Corregidor, V.; Franco, N.; Dias, M.; Alves, E.; Alves, L.C.

    2014-01-01

    The surface morphology and chemical composition of a Ga 0.93 In 0.07 Sb ternary alloy crystal grown by liquid encapsulated Czochralski were investigated by means of scanning electron microscope equipped with energy dispersive X-ray spectroscopy (SEM-EDX), particle induced X-ray emission (PIXE) and X-ray diffraction (XRD) techniques. Results indicate that poor mixing of the starting compounds during the synthesizing process lead to a ternary alloy with different compositions along the growth direction. Small regions with high concentrations of indium were highlighted throughout the crystal. Different parts removed from the crystal present similar microstructures with planar defects. Up to five different regions were identified in the sample. (author)

  2. Characterization of GaInSb crystal obtained by Czochralski Method

    Energy Technology Data Exchange (ETDEWEB)

    Streicher, M.; Costa, E.M.; Dedavid, B.A. [Pontificia Universidade Catolica do Rio Grande do Sul (PUC-RS), Porto Alegre, RS (Brazil); Corregidor, V.; Franco, N.; Dias, M.; Alves, E.; Alves, L.C. [Universidade de Lisboa, Sacavem (Portugal)

    2014-07-01

    The surface morphology and chemical composition of a Ga{sub 0.93}In{sub 0.07}Sb ternary alloy crystal grown by liquid encapsulated Czochralski were investigated by means of scanning electron microscope equipped with energy dispersive X-ray spectroscopy (SEM-EDX), particle induced X-ray emission (PIXE) and X-ray diffraction (XRD) techniques. Results indicate that poor mixing of the starting compounds during the synthesizing process lead to a ternary alloy with different compositions along the growth direction. Small regions with high concentrations of indium were highlighted throughout the crystal. Different parts removed from the crystal present similar microstructures with planar defects. Up to five different regions were identified in the sample. (author)

  3. Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

    Science.gov (United States)

    Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

    2009-01-01

    Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

  4. Deep donor-acceptor pair recombination in bulk GaP studied by ODMR and DLTS techniques

    International Nuclear Information System (INIS)

    Awadelkarim, O.O.; Godlewski, M.; Monemar, B.

    1989-01-01

    Deep level transient spectroscopy (DLTS) and optically detected magnetic resonance (ODMR) are applied to study deep defect levels with photoluminescence bands observed in the near infrared region in S- and Te-doped bulk GaP crystals grown by the liquid encapsulated Czochralski method. The ODMR data suggest that the emission bands with maxima observed at 8000-8200 A (∼ 1.5 eV), common to both materials, and at 7750 A (1.6 eV), present only in GaP:Te, are due to donor-acceptor pair recombinations. The latter band, reported here for the first time, is tentatively associated with deep states observed by DLTS. (author) 19 refs., 5 figs

  5. Synthesis of lithium niobate and monocrystal growth by Czochralski method

    International Nuclear Information System (INIS)

    Balzuweit, K.

    1988-01-01

    The qualitative analysis of lithium niobate by x-ray analysis and optical microscopy is presented. The lithium niobate compound was obtained by synthesis using niobium oxides and lithium carbonates. The lithium niobate monocrystal growth was done by Czochralski method. (M.C.K.)

  6. Point Defect Identification and Management for Sub-300 nm Light Emitting Diodes and Laser Diodes Grown on Bulk AlN Substrates

    Science.gov (United States)

    Bryan, Zachary A.

    defects in the films due to the increase in their formation energies during growth. This method improved the electrical properties of p-type GaN and n-type AlGaN and reduced stress thereby preventing films from cracking. The optical and structural quality of high Al-content AlGaN multiple quantum wells, light emitting diodes (LEDs), and laser diodes (LDs) grown on single crystalline AlN substrates are investigated. The use of bulk AlN substrates enabled the undoubtable distinction between the effect of growth conditions, such as V/III ratio, on the optical quality from the influence of dislocations. At a high V/III ratio and the proper MQW design, a record high IQE of 80% at a carrier density of 1018 cm-3 is achieved at 258 nm. With these structures, true sub-300 nm lasing is realized and distinguished from super luminescence for the first time by the observations of lasing characteristics such as longitudinal cavity modes, 100% polarized emission, and an elliptically shaped far-field pattern. A transverse electric to transverse magnetic polarization crossover at 245 nm is found. Lasing is observed in both asymmetric and symmetric waveguide structures with and without the presence of Si- and Mg-doping in the waveguide layer. The lowest measurable lasing threshold is 50 kW/cm2 and potentially a lower threshold is obtained in a symmetric waveguide structure while the lowest measured lasing wavelength is 237 nm. Gain measurements reveal a net modal gain greater than 100 cm-1 which is the highest reported value for sub-300 nm lasers. Furthermore, a lowest reported FWHM of 0.012 nm is observed indicating the high quality of the laser structure. Finally, electrically injected LED and LD structures are studied showing great potential for the realization of the first sub-300 nm LD.

  7. Czochralski growth and optical properties of Li 6Gd 1-xEu x(BO 3) 3 ( x=0-1) single crystals

    Science.gov (United States)

    Yavetskiy, R. P.; Dolzhenkova, E. F.; Dubovik, M. F.; Korshikova, T. I.; Tolmachev, A. V.

    2005-04-01

    It was shown that a continuous series of Li 6Gd 1-xEu x(BO 3) 3 solid solutions exist within the whole concentration range ( x=0-1). Li 6Gd 1-xEu x(BO 3) 3 ( x=0-0.03; 1) single crystals up to 25 mm in length and up to 20 mm in diameter have been grown by the Czochralski method. The structural perfection of the crystals has been estimated from etch patterns and XPA analysis results. The optical absorption and thermally stimulated luminescence of the grown crystals has been studied.

  8. Nonlinear model-based control of the Czochralski process III: Proper choice of manipulated variables and controller parameter scheduling

    Science.gov (United States)

    Neubert, M.; Winkler, J.

    2012-12-01

    This contribution continues an article series [1,2] about the nonlinear model-based control of the Czochralski crystal growth process. The key idea of the presented approach is to use a sophisticated combination of nonlinear model-based and conventional (linear) PI controllers for tracking of both, crystal radius and growth rate. Using heater power and pulling speed as manipulated variables several controller structures are possible. The present part tries to systematize the properties of the materials to be grown in order to get unambiguous decision criteria for a most profitable choice of the controller structure. For this purpose a material specific constant M called interface mobility and a more process specific constant S called system response number are introduced. While the first one summarizes important material properties like thermal conductivity and latent heat the latter one characterizes the process by evaluating the average axial thermal gradients at the phase boundary and the actual growth rate at which the crystal is grown. Furthermore these characteristic numbers are useful for establishing a scheduling strategy for the PI controller parameters in order to improve the controller performance. Finally, both numbers give a better understanding of the general thermal system dynamics of the Czochralski technique.

  9. The α-particle excited scintillation response of YAG:Ce thin films grown by liquid phase epitaxy

    International Nuclear Information System (INIS)

    Prusa, Petr; Nikl, Martin; Mares, Jiri A.; Nitsch, Karel; Beitlerova, Alena; Kucera, Miroslav

    2009-01-01

    Y 3 Al 5 O 12 :Ce (YAG:Ce) thin films were grown from PbO-,BaO-, and MoO 3 -based fluxes using the liquid phase epitaxy (LPE) method. Photoelectron yield, its time dependence within 0.5-10 μs shaping time, and energy resolution of these samples were measured under α-particle excitation. For comparison a sample of the Czochralski grown bulk YAG:Ce single crystal was measured as well. Photoelectron yield values of samples grown from the BaO-based flux were found superior to other LPE films and comparable with that of the bulk single crystal. The same is valid also for the time dependence of photoelectron yield. Obtained results are discussed taking into account the influence of the flux and technology used. Additionally, α particle energy deposition in very thin films is modelled and discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  10. Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection

    CERN Document Server

    Verbitskaya, E; Ivanov, A; Strokan, N; Vasilev, V; Markov, A; Polyakov, A; Gavrin, V; Kozlova, Y; Veretenkin, E; Bowles, T J

    2000-01-01

    The results on electrical characteristics and charge collection efficiency in the detectors from bulk SI GaAs developed as a material for solar neutrino spectroscopy are presented. SI GaAs crystals were grown by the Czochralski method. The changes in the stoichiometric components are permanently controlled. It is shown that the performance of GaAs p sup + -i-n sup + structures provided the range of operational reverse voltage up to 1 kV. Measurement of deep level spectra and their analysis reveal the dominant deep levels - hole traps E sub v +0.51 and +0.075 eV in GaAs grown from stoichiometric and nonstoichiometric melts, respectively. Investigation of carrier transport properties and bulk homogeneity evinced in charge collection efficiency has shown advantageous results for SI GaAs grown from stoichiometric melt. The reduction of carrier transport parameters and charge collection efficiency in GaAs grown from nonstoichiometric melt is analyzed taking into consideration formation of the hole trap E sub v +0....

  11. Charge collection efficiency in SI GaAs grown from melts with variable composition as a material for solar neutrino detection

    International Nuclear Information System (INIS)

    Verbitskaya, E.; Eremin, V.; Ivanov, A.; Strokan, N.; Vasilev, V.; Markov, A.; Polyakov, A.; Gavrin, V.; Kozlova, Yu.; Veretenkin, E.; Bowles, T.J.

    2000-01-01

    The results on electrical characteristics and charge collection efficiency in the detectors from bulk SI GaAs developed as a material for solar neutrino spectroscopy are presented. SI GaAs crystals were grown by the Czochralski method. The changes in the stoichiometric components are permanently controlled. It is shown that the performance of GaAs p + -i-n + structures provided the range of operational reverse voltage up to 1 kV. Measurement of deep level spectra and their analysis reveal the dominant deep levels - hole traps E v +0.51 and +0.075 eV in GaAs grown from stoichiometric and nonstoichiometric melts, respectively. Investigation of carrier transport properties and bulk homogeneity evinced in charge collection efficiency has shown advantageous results for SI GaAs grown from stoichiometric melt. The reduction of carrier transport parameters and charge collection efficiency in GaAs grown from nonstoichiometric melt is analyzed taking into consideration formation of the hole trap E v +0.075 eV, presumably assigned to Ga antisite and its influence on the concentration of the ionized deep donor level EL2 +

  12. Cost of Czochralski wafers as a function of diameter

    Science.gov (United States)

    Leipold, M. H.; Radics, C.; Kachare, A.

    1980-02-01

    The impact of diameter in the range of 10 to 15 cm on the cost of wafers sliced from Czochralski ingots was analyzed. Increasing silicon waste and decreasing ingot cost with increasing ingot size were estimated along with projected costs. Results indicate a small but continuous decrease in sheet cost with increasing ingot size in this size range. Sheet costs including silicon are projected to be $50 to $60/sq m (1980 $) depending upon technique used.

  13. The fluid flow of Czochralski melt under the electromagnetic field

    OpenAIRE

    加藤, 拓哉; 二條久保, 裕; 岩本, 光生; 齋藤, 晋一; 赤松, 正人; 尾添, 紘之; Takuya, Katoh; Yuu, Nijoukubo; Mitsuo, Iwamoto; Shinichi, Saitoh; Masato, Akamatsu; Hiroyuki, Ozoe; 大分大院; 大分大工; 大分大工

    2009-01-01

    The silicon single crystal is use for the semiconductor device and it is mainly manufactured by the Czochralski crystal growing method. Under the Cz method, the forced convection and natural convection caused by the crystal rotation and the temperature difference between the crystal and crucible. In traditional system, the melt convection is controlled by the heater power, the crystal and crucible rotation. We apply Lorentz force to control the melt convection in this study, the Lorentz force...

  14. Highly c-axis oriented growth of GaN film on sapphire (0001 by laser molecular beam epitaxy using HVPE grown GaN bulk target

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2013-09-01

    Full Text Available Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001 substrates by laser molecular beam epitaxy (LMBE were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM, micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS. The x-ray rocking curve full width at a half maximum (FWHM value for (0002 reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002 plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

  15. KBr-Li Br and KBr-LiBr doped with Ti mixed single crystal by Czochralski method and glow curve studies

    International Nuclear Information System (INIS)

    Faripour, H.; Faripour, N.

    2003-01-01

    Mixed-single Crystals: pure KBr-LiBr and KBr-LiBr with Ti dopant were grown by Czochralski method. Because of difference between lattice parameters of KBr and LiBr, the growth speed of crystals were relatively low, and they were annealed in a special temperature condition providing some cleavages. They were exposed by β radiation and the glow curve was analysed for each crystal. Analysing of glow curve, showed that Ti impurity has been the curves of main peak curve appearance temperature decreasing

  16. Crystal growth by Bridgman and Czochralski method of the ferromagnetic quantum critical material YbNi4P2

    Science.gov (United States)

    Kliemt, K.; Krellner, C.

    2016-09-01

    The tetragonal YbNi4P2 is one of the rare examples of compounds that allow the investigation of a ferromagnetic quantum critical point. We report in detail on two different methods which have been used to grow YbNi4P2 single crystals from a self-flux. The first, a modified Bridgman method, using a closed crucible system yields needle-shaped single crystals oriented along the [001]-direction. The second method, the Czochralski growth from a levitating melt, yields large single crystals which can be cut in any desired orientation. With this crucible-free method, samples without flux inclusions and a resistivity ratio at 1.8 K of RR1.8K = 17 have been grown.

  17. Reduction of oxygen concentration by heater design during Czochralski Si growth

    Science.gov (United States)

    Zhou, Bing; Chen, Wenliang; Li, Zhihui; Yue, Ruicun; Liu, Guowei; Huang, Xinming

    2018-02-01

    Oxygen is one of the highest-concentration impurities in single crystals grown by the Czochralski (CZ) process, and seriously impairs the quality of the Si wafer. In this study, computer simulations were applied to design a new CZ system. A more appropriate thermal field was acquired by optimization of the heater structure. The simulation results showed that, compared with the conventional system, the oxygen concentration in the newly designed CZ system was reduced significantly throughout the entire CZ process because of the lower crucible wall temperature and optimized convection. To verify the simulation results, experiments were conducted on an industrial single-crystal furnace. The experimental results showed that the oxygen concentration was reduced significantly, especially at the top of the CZ-Si ingot. Specifically, the oxygen concentration was 6.19 × 1017 atom/cm3 at the top of the CZ-Si ingot with the newly designed CZ system, compared with 9.22 × 1017 atom/cm3 with the conventional system. Corresponding light-induced degradation of solar cells based on the top of crystals from the newly designed CZ system was 1.62%, a reduction of 0.64% compared with crystals from the conventional system (2.26%).

  18. Numerical Modelling of the Czochralski Growth of β-Ga2O3

    Directory of Open Access Journals (Sweden)

    Wolfram Miller

    2017-01-01

    Full Text Available Our numerical modelling of the Czochralski growth of single crystalline β-Ga 2 O 3 crystals (monoclinic symmetry starts at the 2D heat transport analysis within the crystal growth furnace, proceeds with the 3D heat transport and fluid flow analysis in the crystal-melt-crucible arrangement and targets the 3D thermal stress analysis within the β-Ga 2 O 3 crystal. In order to perform the stress analysis, we measured the thermal expansion coefficients and the elastic stiffness coefficients in two samples of a β-Ga 2 O 3 crystal grown at IKZ. Additionally, we analyse published data of β-Ga 2 O 3 material properties and use data from literature for comparative calculations. The computations were performed by the software packages CrysMAS, CGsim, Ansys-cfx and comsol Multiphysics. By the hand of two different thermal expansion data sets and two different crystal orientations, we analyse the elastic stresses in terms of the von-Mises stress.

  19. Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

    International Nuclear Information System (INIS)

    Pacifico, Nicola; Dolenc Kittelmann, Irena; Fahrer, Manuel; Moll, Michael; Militaru, Otilia

    2011-01-01

    Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280Ωcm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8×10 15 /cm 2 . The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

  20. Characterization of proton and neutron irradiated low resistivity p-on-n magnetic Czochralski ministrip sensors and diodes

    Energy Technology Data Exchange (ETDEWEB)

    Pacifico, Nicola, E-mail: nicola.pacifico@cern.ch [CERN, Geneva (Switzerland); Dolenc Kittelmann, Irena; Fahrer, Manuel; Moll, Michael [CERN, Geneva (Switzerland); Militaru, Otilia [UCL, Louvain (Belgium)

    2011-12-01

    Transient Current Technique (TCT) and Charge Collection Efficiency (CCE) measurements were performed on low resistivity (280{Omega}cm) n-bulk, p-readout magnetic Czochralski ministrip sensors and diodes. The detectors were irradiated with neutrons and 24 GeV/c protons up to a total NIEL equivalent fluence of 8 Multiplication-Sign 10{sup 15}/cm{sup 2}. The study was addressed to assess the radiation tolerance of the detectors up to fluences expected in the next generations of High Energy Physics experiments. The charge collection efficiency after irradiation was found to be much higher than for standard FZ silicon p-in-n sensors. The underlying physics of this remarkable result was investigated by performing Edge-TCT measurements on one of the neutron irradiated ministrip sensors to extract detailed informations about the field and efficiency profiles of the detector.

  1. Three-dimensional study of the pressure field and advantages of hemispherical crucible in silicon Czochralski crystal growth

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, F. [LTSE Laboratory, University of Science and Technol., USTHB BP 32 Elalia, Babezzouar, Algiers (Algeria); University Mouloud Mammeri, Tizi Ouzou (Algeria); Merah, A. [University M' hammed Bougara, Boumerdes (Algeria); Zizi, M. [LTSE Laboratory, University of Science and Technol., USTHB BP 32 Elalia, Babezzouar, Algiers (Algeria); Hanchi, S. [UER Mecanique/ E.M.P B.P 17 Bordj El Bahri, Algiers (Algeria); Alemany, A. [Laboratoire EPM, CNRS, Grenoble (France); Bouabdallah, A.

    2010-06-15

    The effects of several growth parameters in cylindrical and spherical Czochralski crystal process are studied numerically and particularly, we focus on the influence of the pressure field. We present a set of three-dimensional computational simulations using the finite volume package Fluent in two different geometries, a new geometry as cylindro-spherical and the traditional configuration as cylindro-cylindrical. We found that the evolution of pressure which is has not been studied before; this important function is strongly related to the vorticity in the bulk flow, the free surface and the growth interface. It seems that the pressure is more sensitive to the breaking of symmetry than the other properties that characterize the crystal growth as temperature or velocity fields. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Preparation of Transparent Bulk TiO2/PMMA Hybrids with Improved Refractive Indices via an in Situ Polymerization Process Using TiO2 Nanoparticles Bearing PMMA Chains Grown by Surface-Initiated Atom Transfer Radical Polymerization.

    Science.gov (United States)

    Maeda, Satoshi; Fujita, Masato; Idota, Naokazu; Matsukawa, Kimihiro; Sugahara, Yoshiyuki

    2016-12-21

    Transparent TiO 2 /PMMA hybrids with a thickness of 5 mm and improved refractive indices were prepared by in situ polymerization of methyl methacrylate (MMA) in the presence of TiO 2 nanoparticles bearing poly(methyl methacrylate) (PMMA) chains grown using surface-initiated atom transfer radical polymerization (SI-ATRP), and the effect of the chain length of modified PMMA on the dispersibility of modified TiO 2 nanoparticles in the bulk hybrids was investigated. The surfaces of TiO 2 nanoparticles were modified with both m-(chloromethyl)phenylmethanoyloxymethylphosphonic acid bearing a terminal ATRP initiator and isodecyl phosphate with a high affinity for common organic solvents, leading to sufficient dispersibility of the surface-modified particles in toluene. Subsequently, SI-ATRP of MMA was achieved from the modified surfaces of the TiO 2 nanoparticles without aggregation of the nanoparticles in toluene. The molecular weights of the PMMA chains cleaved from the modified TiO 2 nanoparticles increased with increases in the prolonging of the polymerization period, and these exhibited a narrow distribution, indicating chain growth controlled by SI-ATRP. The nanoparticles bearing PMMA chains were well-dispersed in MMA regardless of the polymerization period. Bulk PMMA hybrids containing modified TiO 2 nanoparticles with a thickness of 5 mm were prepared by in situ polymerization of the MMA dispersion. The transparency of the hybrids depended significantly on the chain length of the modified PMMA on the nanoparticles, because the modified PMMA of low molecular weight induced aggregation of the TiO 2 nanoparticles during the in situ polymerization process. The refractive indices of the bulk hybrids could be controlled by adjusting the TiO 2 content and could be increased up to 1.566 for 6.3 vol % TiO 2 content (1.492 for pristine PMMA).

  3. In Situ Determination of Thermal Profiles during Czochralski Silicon Crystal Growth by an Eddy Current Technique.

    Science.gov (United States)

    Choe, Kwang Su.

    An eddy current testing method was developed to continuously monitor crystal growth process and determine thermal profiles in situ during Czochralski silicon crystal growth. The work was motivated by the need to improve the quality of the crystal by controlling thermal gradients and annealing history over the growth cycle. The experimental concept is to monitor intrinsic electrical conductivities of the growing crystal and deduce temperature values from them. The experiments were performed in a resistance-heated Czochralski puller with a 203 mm (8 inch) diameter crucible containing 6.5 kg melt. The silicon crystals being grown were about 80 mm in diameter and monitored by an encircling sensor operating at three different test frequencies (86, 53 and 19 kHz). A one-dimensional analytical solution was employed to translate the detected signals into electrical conductivities. In terms of experiments, the effects of changes in growth condition, which is defined by crystal and crucible rotation rates, crucible position, pull rate, and hot-zone configuration, were investigated. Under a given steady-state condition, the thermal profile was usually stable over the entire length of crystal growth. The profile shifted significantly, however, when the crucible rotation rate was kept too high. As a direct evidence to the effects of melt flow on heat transfer process, a thermal gradient minimum was observed about the crystal/crucible rotation combination of 20/-10 rpm cw. The thermal gradient reduction was still most pronounced when the pull rate or the radiant heat loss to the environment was decreased: a nearly flat axial thermal gradient was achieved when either the pull rate was halved or the height of the exposed crucible wall was effectively doubled. Under these conditions, the average axial thermal gradient along the surface of the crystal was about 4-5 ^{rm o}C/mm. Regardless of growth condition, the three-frequency data revealed radial thermal gradients much larger

  4. Dynamic global model of oxide Czochralski process with weighing control

    Science.gov (United States)

    Mamedov, V. M.; Vasiliev, M. G.; Yuferev, V. S.

    2011-03-01

    A dynamic model of oxide Czochralski growth with weighing control has been developed for the first time. A time-dependent approach is used for the calculation of temperature fields in different parts of a crystallization set-up and convection patterns in a melt, while internal radiation in crystal is considered in a quasi-steady approximation. A special algorithm is developed for the calculation of displacement of a triple point and simulation of a crystal surface formation. To calculate variations in the heat generation, a model of weighing control with a commonly used PID regulator is applied. As an example, simulation of the growth process of gallium-gadolinium garnet (GGG) crystals starting from the stage of seeding is performed.

  5. Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth

    Science.gov (United States)

    Wang, T.; Ciszek, T. F.

    2006-01-10

    In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

  6. Modeling of dislocation dynamics in germanium Czochralski growth

    Science.gov (United States)

    Artemyev, V. V.; Smirnov, A. D.; Kalaev, V. V.; Mamedov, V. M.; Sidko, A. P.; Podkopaev, O. I.; Kravtsova, E. D.; Shimansky, A. F.

    2017-06-01

    Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in growth processes. Dislocation density is one of the most important parameters defining the quality of germanium crystal. In this paper, we have performed experimental study of dislocation density during 4-in. germanium crystal growth using the Czochralski method and comprehensive unsteady modeling of the same crystal growth processes, taking into account global heat transfer, melt flow and melt/crystal interface shape evolution. Thermal stresses in the crystal and their relaxation with generation of dislocations within the Alexander-Haasen model have been calculated simultaneously with crystallization dynamics. Comparison to experimental data showed reasonable agreement for the temperature, interface shape and dislocation density in the crystal between calculation and experiment.

  7. Correlations between TD annihilation and oxygen precipitation in Czochralski-grown silicon

    International Nuclear Information System (INIS)

    Reiche, M.

    1989-01-01

    Results of two-stage annealing experiments are presented including preannealing at T o C (TD formation) and a second annealing step at T=550 to 850 o C in order to study the annihilation of TD's and their influence on the oxygen precipitation. The investigations show that (1) TD's cannot act as nuclei for oxide precipitates and that (2) their annihilation, connected with the increased formation of Si I induced defects (RLD's), proves TD's to consist also of self-interstitials. (author) 11 refs., 4 figs

  8. Infrared studies of defects formed during postirradiation anneals of Czochralski silicon

    Science.gov (United States)

    Londos, C. A.; Sarlis, N. V.; Fytros, L. G.

    1998-10-01

    This article reports on defect studies of neutron-irradiated Czochralski-grown silicon (Cz-Si) material by means of infrared spectroscopy. In particular, the investigation was focused on the evolution of the 828 cm-1 well-known band of A-center, due to isochronal anneals from room temperature (RT) up to ≈700 °C. The strength of the VO band begins to increase above ≈200 gradually up to 300 °C (stage I); then, it begins to decrease up to ≈400 °C (stage II), where upon it stabilizes up to ≈550 °C (stage III). Upon re-irradiation under exactly the same conditions and repeating the annealing process, the increase of the VO signal in stage I disappears. The phenomenon is ascribed to the existence of defect aggregates labeled as Xi centers which are correlated with (impurity-defect) clusters that compete with Oi in capturing vacancies. The presence of Xi centers is related to the thermal annealings performed. Comparison of the evolution of VO (828 cm-1) and VO2 (887 cm-1) bands between irradiated and re-irradiated materials, during stage II, is made and the results are discussed in the framework of established reaction patterns. The stabilization of the amplitude of the 828 cm-1 line in stage III is examined. The prevailing aspect is that a portion of A-centers in neutron-irradiated Si acquires larger thermal stability by relaxing in the vicinity of larger defects.

  9. Study on grown-in defects in CZ-Si by positron annihilation

    International Nuclear Information System (INIS)

    Nakagawa, S.; Hori, F.; Oshima, R.

    2004-01-01

    In order to study the nature of grown-in microdefects of a silicon wafer taken from a czochralski-grown single crystal (CZ-Si) in which ring oxidation-induced stacking faults (ring-OSF) are formed after oxidation heat treatment, positron annihilation coincidence Doppler broadening experiments (CDB) have been performed. Vacancy-type defects were detected in the central region of a wafer of an as-grown crystal, and they were changed with annealing. It was confirmed that different types of defects were formed in the regions of outside and inside of the ring-OSF. (orig.)

  10. Control and homogenization of oxygen distribution in Si crystals by the novel technique: electromagnetic Czochralski method (EMCZ)

    Science.gov (United States)

    Watanabe, Masahito; Eguchi, Minoru; Hibiya, Taketoshi

    1999-07-01

    A novel method for control and homogenization oxygen distribution in silicon crystals by using electromagnetic force (EMF) to rotate the melt without crucible rotation has been developed. We call it electromagnetic Czochralski method. An EMF in the azimuthal direction is generated in the melt by the interaction between an electric current through the melt in the radial direction and a vertical magnetic field. (B). The rotation rate (ωm) of the silicon melt is continuously changed from 0 to over 105 rpm under I equals 0 to 8 A and B equals 0 to 0.1 T. Thirty-mm-diameter silicon single crystals free of dislocations could be grown under several conditions. The oxygen concentration in the crystals was continuously changed from 1 X 1017 to 1 X 1018 atoms/cm3 with increase of melt rotation by electromagnetic force. The homogeneous oxygen distributions in the radial directions were achieved. The continuous change of oxygen concentration and the homogenization of oxygen distribution along the radial direction are attributed to the control of the diffusion-boundary-layer at both the melt/crucible and crystal/melt by forced flow due to the EMF. This new method would be useful for growth of the large-diameter silicon crystals with a homogeneous distribution of oxygen.

  11. 3-D time-dependent numerical model of flow patterns within a large-scale Czochralski system

    Science.gov (United States)

    Nam, Phil-Ouk; O, Sang-Kun; Yi, Kyung-Woo

    2008-04-01

    Silicon single crystals grown through the Czochralski (Cz) method have increased in size to 300 mm, resulting in the use of larger crucibles. The objective of this study is to investigate the continuous Cz method in a large crucible (800 mm), which is performed by inserting a polycrystalline silicon rod into the melt. The numerical model is based on a time-dependent and three-dimensional standard k- ɛ turbulent model using the analytical software package CFD-ACE+, version 2007. Wood's metal melt, which has a low melting point ( Tm=70 °C), was used as the modeling fluid. Crystal rotation given in the clockwise direction with rotation rates varying from 0 to 15 rpm, while the crucible was rotated counter-clockwise, with rotation rates between 0 and 3 rpm. The results show that asymmetrical phenomena of fluid flow arise as results of crystal and crucible rotation, and that these phenomena move with the passage of time. Near the crystal, the flow moves towards the crucible at the pole of the asymmetrical phenomena. Away from the poles, a vortex begins to form, which is strongly pronounced in the region between the poles.

  12. Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

    International Nuclear Information System (INIS)

    Wang, Hongzhe; Chen, Chao; Pan, Miao; Sun, Yiling; Yang, Xi

    2015-01-01

    Graphical abstract: - Highlights: • The phosphorus-doped SiN x with negative fixed charge was deposited by PECVD. • The increase of lifetime was observed on P-doped SiN x passivated Si under illumination. • The enhancement of lifetime was caused by the increase of negative fixed charges. - Abstract: This study reports a doubling of the effective minority carrier lifetime under light soaking conditions, observed in a boron-doped p-type Czochralski grown silicon wafer passivated by a phosphorus-doped silicon nitride thin film. The analysis of capacitance–voltage curves revealed that the fixed charge in this phosphorus-doped silicon nitride film was negative, which was unlike the well-known positive fixed charges observed in traditional undoped silicon nitride. The analysis results revealed that the enhancement phenomenon of minority carrier lifetime was caused by the abrupt increase in the density of negative fixed charge (from 7.2 × 10 11 to 1.2 × 10 12 cm −2 ) after light soaking.

  13. Furnace and support equipment for space processing. [space manufacturing - Czochralski method

    Science.gov (United States)

    Mazelsky, R.; Duncan, C. S.; Seidensticker, R. G.; Johnson, R. A.; Hopkins, R. H.; Roland, G. W.

    1975-01-01

    A core facility capable of performing a majority of materials processing experiments is discussed. Experiment classes are described, the needs peculiar to each experiment type are outlined, and projected facility requirements to perform the experiments are treated. Control equipment (automatic control) and variations of the Czochralski method for use in space are discussed.

  14. Diffuse X-ray scattering near the Bragg reflection of P-doped Czochralski silicon

    International Nuclear Information System (INIS)

    Stojanoff, V.; Pimentel, C.A.F.

    1983-01-01

    Bragg line profile and high resolution diffuse X-ray scattering measurements around the (400) reciprocal lattice point of dislocation-free Czochralski Si single crystals P-doped have shown defects of interstitial nature with typical size about 1000 A. (Author) [pt

  15. Czochralski growth and characterization of {beta}-Ga{sub 2}O{sub 3} single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Galazka, Z.; Uecker, R.; Irmscher, K.; Albrecht, M.; Klimm, D.; Pietsch, M.; Bruetzam, M.; Bertram, R.; Ganschow, S.; Fornari, R. [Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin (Germany)

    2010-12-15

    Transparent semiconducting {beta}-Ga{sub 2}O{sub 3} single crystals were grown by the Czochralski method from an iridium crucible under a dynamic protective atmosphere to control partial pressures of volatile species of Ga{sub 2}O{sub 3}. Thermodynamic calculations on different atmospheres containing CO{sub 2}, Ar and O{sub 2} reveal that CO{sub 2} growth atmosphere combined with overpressure significantly decreases evaporation of volatile Ga{sub 2}O{sub 3} species without any harm to iridium crucible. It has been found that CO{sub 2}, besides providing high oxygen concentration at high temperatures, is also acting as a minor reducing agent for Ga{sub 2}O{sub 3}. Different coloration of obtained crystals as well as optical and electrical properties are directly correlated with growth conditions (atmosphere, pressure and temperature gradients), but not with residual impurities. Typical electrical properties of the n-type {beta}-Ga{sub 2}O{sub 3} crystals at room temperature are: {rho} = 0.1 - 0.3 {omega}cm, {mu}{sub n,Hall} = 110 - 150 cm{sup 2}V{sup -1}s{sup -1}, n{sub Hall} = 2 - 6 x 10{sup 17} cm{sup -3} and E{sub Ionisation} = 30 - 40 meV. A decrease of transmission in the IR-region is directly correlated with the free carrier concentration and can be effectively modulated by the dynamic growth atmosphere. Electron paramagnetic resonance (EPR) spectra exhibit an isotropic shallow donor level and anisotropic defect level. According to differential thermal analysis (DTA) measurements, there is substantially no mass change of {beta}-Ga{sub 2}O{sub 3} crystals below 1200 C (i.e. no decomposition) under oxidizing or neutral atmosphere, while the mass gradually decreases with temperature above 1200 C. High resolution transmission electron microscopy (HRTEM) images at atomic resolution show the presence of vacancies, which can be attributed to Ga or O sites, and interstitials, which can likely be attributed to Ga atoms. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGa

  16. Full-scale experiments on solid-pellets feed continuous Czochralski growth of silicon crystals

    Science.gov (United States)

    Anselmo, A.; Koziol, J.; Prasad, V.

    1996-06-01

    Two long-term solid-pellets feed continuous Czochralski growth experiments were performed in an industrial Czochralski crystal puller as an extension to our previous work [7]. The goals of these experiments were to examine how polysilicon pellets would melt in a standard Cz system, to discover the thermal effects the pellets would have on the overall melt, and to find if pellet addition could be an effective melt replenishment technique. These experiments demonstrate that the quality of the melt for the CCz growth is based heavily on the surface temperature of the melt. A novel characterization method ("impact severity") is developed to characterize the quality of the CCz melt. Stable feed rate and melt conditions were achieved for three different pull rates. These experiments demonstrate that the process is technically feasible, and can be retrofitted to the existing industrial systems. Several critical issues that need to be addressed to develop a successful CCz process are also discussed.

  17. Charge collection measurements with p-type Magnetic Czochralski silicon single pad detectors

    International Nuclear Information System (INIS)

    Tosi, C.; Bruzzi, M.; Macchiolo, A.; Scaringella, M.; Petterson, M.K.; Sadrozinski, H.F.-W.; Betancourt, C.; Manna, N.; Creanza, D.; Boscardin, M.; Piemonte, C.; Zorzi, N.; Borrello, L.; Messineo, A.

    2007-01-01

    The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1 MeV neutron equivalent fluence of 1x10 15 cm -2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements

  18. Digital Control of the Czochralski Growth of Gallium Arsenide-Controller Software Reference Manual

    Science.gov (United States)

    1987-07-15

    once a parameter was changed. (2) Despite of the fact that there are analog controllers on the market which feature a high degree of automation...single-zone heater is in use.) - 4 - Kfc ^&S^^ p IS’ K: i 1. Digital Control of Czochralski GaAs Crystal Growth (2) Four tachometers which are...34 if either the overlay name or the program version loaded with the overlay do not match the expected data. (It is important not to mix modules

  19. Infrared characterization of some oxygen-related defects in Czochralski silicon

    International Nuclear Information System (INIS)

    Hallberg, T.

    1993-01-01

    This thesis is based on the work made at Linkoeping University at the Department of Physics and Measurement Technology. It is divided into two parts. The first part is a short introduction to defects in silicon, Fourier transform infrared spectroscopy as well as some physics involved in semiconductor crystals. The second part consists of two papers: Enhanced oxygen precipitation in electron irradiated silicon. Annealing of electron irradiated antimony-doped Czochralski silicon

  20. Numerical simulation of the forced convection in silicon growth by the Czochralski's method

    International Nuclear Information System (INIS)

    Scalvi, L.V.A.; Mokross, B.J.; Zago, J.V.

    1987-01-01

    A numerical simulation of the Czochralski configuration for liquid silicon is done by solving the Navier-Stokes equations by the finite element technique. Galerkin's formulation is used with quadratic approximations for the components of the velocity and linear ones for the pressure. The results are discussed for different combinations of crystal-crucible rotations, considering in each case the effect of the velocity distribution on the impurity and/or dopand incorporation in the crystal. (auhor) [pt

  1. Paramagnetic resonance of LaGaO3: Mn single crystals grown by floating zone melting

    Science.gov (United States)

    Vazhenin, V. A.; Potapov, A. P.; Artyomov, M. Yu.; Salosin, M. A.; Fokin, A. V.; Gil'mutdinov, I. F.; Mukhamedshin, I. R.

    2016-02-01

    The EPR spectrum of Mn-doped lanthanum gallate single crystals grown by floating zone melting with optical heating has been studied. In contrast to the crystals grown according to the Czochralski method, no manganese is found in these crystals even after high-temperature annealing in air. The spectral characteristics of Fe3+ and Gd3+ centers in crystals prepared by various methods have been compared in the rhombohedral phase, and the fourth-rank nondiagonal parameters of the Fe3+ trigonal centers have been determined, as well.

  2. Effect of germanium doping on the annealing characteristics of oxygen and carbon-related defects in Czochralski silicon

    International Nuclear Information System (INIS)

    Londos, C. A.; Andrianakis, A.; Sgourou, E. N.; Emtsev, V.; Ohyama, H.

    2010-01-01

    This paper is devoted to the annealing studies of defects produced in carbon-rich Ge-doped Czochralski-grown Si (Cz-Si) by 2 MeV electron irradiation. The annealing temperature of vacancy-oxygen (VO) complexes, carbon interstitial-oxygen interstitial (C i O i ), and carbon interstitial-carbon substitutional (C i C s ) pairs as well as the formation temperature of vacancy-two oxygen (VO 2 ) complexes are monitored as a function of Ge concentration. It has been established that the annealing of C i O i and C i C s defects remains practically unaffected by the Ge presence, whereas the annealing temperature of VO defects and the formation temperature of VO 2 complexes are substantially lowered at Ge concentrations larger than 1x10 19 cm -3 . The hydrostatic component of elastic strains introduced by Ge atoms in the Si crystal lattice was calculated. It appears to be very small, at least insufficient to exert a pronounced effect upon the annealing behavior of radiation-produced defects. This conclusion is in line with what is observed for the C i O i and C i C s species. In the case of VO, whose annealing process in Cz-Si is concurrently conducted by two reaction paths VO+O i →VO 2 and VO+Si I →O i , we suggest that the latter reaction in Ge-doped Cz-Si is enhanced by emitting self-interstitials (Si I ) from loosely bound self-interstitial clusters predominantly formed around Ge impurity atoms. As a result, the liberation of self-interstitials at lower annealing temperatures leads to an enhanced annealing of VO defects. An enhanced formation of VO 2 complexes at lower temperatures is also discussed in terms of other reactions running in parallel with the reaction VO+Si I →O i .

  3. The effect of polycrystalline rod insertion in a low Prandtl number melt for continuous Czochralski system

    Science.gov (United States)

    Nam, Phil-Ouk; Son, Seung-Suk; Yi, Kyung-Woo

    2010-04-01

    The increased wafer size results in greater instabilities and complexities within the silicon melt, and melt flow control through the application of magnetic fields is not adequate to stabilize the melt. Therefore, continuous Czochralski systems are being studied as a solution to these issues, with higher productivity and no change in size. The purpose of this study is to observe the effects of polycrystalline rod insertion on the melt for a continuous Czochralski system. In order to observe flow patterns within the melt both broadly and specifically, we employ experimentation on a model system in tandem with numerical simulation. The rod insertion do not significantly affect near the crystal edge. In the melt height from 0.14 to 0.09 m, an asymmetric temperature distributions arise when the crystal rotation is counterclockwise direction (-15 rpm) and the crucible rotation is clockwise direction (3 rpm). The axis-symmetrical temperature distribution is formed at lower melt heights (0.08 and 0.07 m). When the melt height is 0.07 m, the axis-symmetric temperature distribution is maintained even after the rod insertion.

  4. Application of the Proper Orthogonal Decomposition to Turbulent Czochralski Convective Flows

    International Nuclear Information System (INIS)

    Rahal, S; Cerisier, P; Azuma, H

    2007-01-01

    The aim of this work is to study the general aspects of the convective flow instabilities in a simulated Czochralski system. We considered the influence of the buoyancy and crystal rotation. Velocity fields, obtained by an ultrasonic technique, the corresponding 2D Fourier spectra and a correlation function, have been used. Steady, quasi-periodic and turbulent flows, are successively recognized, as the Reynolds number was increased, for a fixed Rayleigh number. The orthogonal decomposition method was applied and the numbers of modes, involved in the dynamics of turbulent flows, calculated. As far as we know, this method has been used for the first time to study the Czochralski convective flows. This method provides also information on the most important modes and allows simple theoretical models to be established. The large rotation rates of the crystal were found to stabilize the flow, and conversely the temperature gradients destabilize the flow. Indeed, the increase of the rotation effects reduces the number of involved modes and oscillations, and conversely, as expected, the increase of the buoyancy effects induces more modes to be involved in the dynamics. Thus, the flow oscillations can be reduced either by increasing the crystal rotation rate to the adequate value, as shown in this study or by imposing a magnetic field

  5. YbNi{sub 4}P{sub 2}. Single crystal growth by the Czochralski method and high-field magnetization measurements

    Energy Technology Data Exchange (ETDEWEB)

    Kliemt, Kristin; Krellner, Cornelius [Goethe-University, Frankfurt (Germany); Foerster, Tobias [HLD, Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Brando, Manuel [MPI for Chemical Physics of Solids, Dresden (Germany)

    2016-07-01

    We have investigated a new generation of YbNi{sub 4}P{sub 2} single crystals that were grown from a levitating melt by the Czochralski method. With T{sub C}= 0.17 K, this ferromagnetic material has the lowest Curie temperature ever observed among stoichiometric compounds. A quantum critical point occurs in the substitution series YbNi{sub 4}(P{sub 1-x}As{sub x}){sub 2} at x ∼ 0.1. The hybridization between localized f-electrons and the conduction electrons leads to a Fermi-liquid ground state with narrow bands and strongly enhanced effective electronic masses (heavy fermion system, Kondo temperature 8 K). An external magnetic field can split the bands, deform the Fermi surface and simultaneously suppress the Kondo interaction. If such a deformation changes the topology, it is called a Lifshitz transition. Previous thermodynamic and electrical transport studies have found indications for Lifshitz transitions in this Kondo lattice system. We report on results of high-field magnetization measurements at low temperature to further investigate the putative Lifshitz transitions in YbNi{sub 4}P{sub 2}.

  6. Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

    Science.gov (United States)

    Yuan, Kang; Sun, Yuxin; Lu, Yunhao; Liang, Xingbo; Tian, Daxi; Ma, Xiangyang; Yang, Deren

    2018-04-01

    Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ensure the quality of epitaxial silicon wafers and the manufacturing yields of devices. In this work, the mechanical properties including the hardness, Young's modulus, indentation fracture toughness and the resistance to dislocation motion have been comparatively investigated for heavily P- and As-doped CZ-Si wafers. It is found that heavily P-doped CZ-Si possesses somewhat higher hardness, lower Young's modulus, larger indentation fracture toughness and stronger resistance to dislocation motion than heavily As-doped CZ-Si. The mechanisms underlying this finding have been tentatively elucidated by considering the differences in the doping effects of P and As in silicon.

  7. Numerical investigation of flows in Czochralski crystal growth by an axisymmetric lattice Boltzmann method

    Science.gov (United States)

    Peng, Y.; Shu, C.; Chew, Y. T.; Qiu, J.

    2003-03-01

    An alternative new method called lattice Boltzmann method (LBM) is applied in this work to simulate the flows in Czochralski crystal growth, which is one of the widely used prototypical systems for melt-crystal growth. The standard LBM can only be used in Cartesian coordinate system and we extend it to be applicable to this axisymmetric thermal flow problem, avoiding the use of three-dimensional LBM on Cartesian coordinate system. The extension is based on the following idea. By inserting position and time dependent source terms into the evolution equation of standard LBM, the continuity and NS equations on the cylindrical coordinate system [1] can be recovered. Our extension is validated by its application to the benchmark problem suggested by Wheeler [2].

  8. Growth mechanisms and morphology of NaCl monocrystals obtained by the Czochralski method

    International Nuclear Information System (INIS)

    Goujon, Gilles G.

    1969-01-01

    In its first part, this research thesis describes the various aspects of the theory of crystal growth in melt bath by drawing with growth being limited either by heat transfer phenomena or by mechanisms of molecule transport through the interface. The second part addresses the quality of the obtained monocrystals (dislocations, dislocation density) while discussing the impact of external growth parameters (germ choice and orientation, drawing speed, rotating speed, atmosphere, impurities, crystal diameter). Then, the author presents an experimental study (equipment, experimental conditions) and discusses its results (influence of temperature on crystal geometry, morphology of side surface, study of crystal plane faces by chemical attack). The next part proposes an interpretation of the morphology change of a crystal drawn by the Czochralski method

  9. A thermal model for czochralski silicon crystal growth with an axial magnetic field

    Science.gov (United States)

    Hjellming, L. N.

    1990-07-01

    This paper presents a thermal model for molten silicon in a Czochralski crystal puller system with an applied uniform axial magnetic field. The melt depth is treated as continually decreasing, which affects the thermal environment of the melt and crystal. The radiative heat loss and the input heat flux are treated as functions of time, with a constraint placed on the heat lost to the crystal from the melt. As the melt motion reaches a steady state rapidly, the temperature and flow fields are treated as instantaneously steady at each melt depth. The heat transport is a mixture of conduction and convection, and by considering the crystal and crucible to be rotating with the same angular velocity, the flows driven by buoyancy and thermocapillarity are isolated and provide the convective heat transport in the melt for the range of magnetic field strengths 0.2 ≤ B ≤ 1.0T.

  10. Centrifugal pumping during Czochralski silicon growth with a strong, non-uniform, axisymmetric magnetic field

    Science.gov (United States)

    Khine, Y. Y.; Walker, J. S.

    1996-08-01

    Centrifugal pumping flows are produced in the melt by the rotations of crystal and crucible during the Czochralski growth of silicon crystals. This paper treats the centrifugal pumping effects with a steady, strong, non-uniform axisymmetric magnetic field. We consider a family of magnetic fields ranging from a uniform axial field to a "cusp" field, which has a purely radial field at the crystal-melt interface and free surface. We present the numerical solutions for the centrifugal pumping flows as the magnetic field is changed continuously from a uniform axial field to a cusp one, and for arbitrary Hartmann number. Since the perfect alignment between the local magnetic field vector and the crystal-melt interface or free surface is not likely, we also investigate the effects of a slight misalignment.

  11. Buoyant convection during Czochralski silicon growth with a strong, non-uniform, axisymmetric magnetic field

    Science.gov (United States)

    Khine, Y. Y.; Walker, J. S.

    1995-02-01

    This paper treats the buoyant convection during the Czochralski growth of silicon crystals with a steady, strong, non-uniform, axisymmetric magnetic field. We consider a family of magnetic fields which includes a uniform axial magnetic field and a "cusp" field which is produced by identical solenoids placed symmetrically above and below the plane of the crystal-melt interface and free surface. We investigate the evolution of the buoyant convection as the magnetic field is changed continuously from a uniform axial field to a cusp field, with a constant value of the root-mean-squared magnetic flux density in the melt. We also investigate changes as the magnetic flux density is increased. While the cusp field appears very promising, perfect alignment between the local magnetic field vector and the crystal-melt interface or free surface is not possible, so the effects of a slight misalignment are also investigated.

  12. LSA Large Area Silicon Sheet Task Continuous Liquid Feed Czochralski Growth

    Science.gov (United States)

    Fiegl, G.

    1979-01-01

    A process for the continuous growth of crystals by the Czochralski method, suitable for producing single silicon crystals for use in solar cells was studied. Continuous growth is the growth of 100 Kg of single silicon crystals, 10 cm in diameter, from one container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a melt-down system and a liquid transfer mechanism, with associated automatic feedback controls was developed. Elements of the transfer system were further developed and tested during actual transfer runs. Considerable simplification of the heating element of the transfer tube was achieved. Accuracy and reliability of the temperature sensor, which is part of the power input control system for the transfer tube, was improved. Electrical and thermal effectiveness were increased while assembly of the transfer tube system was further simplified.

  13. LSA Large Area Silicon Sheet Task. Continuous Liquid Feed Czochralski Growth. [for solar cell fabrication

    Science.gov (United States)

    Fiegl, G.

    1979-01-01

    The design and development of equipment and processes to demonstrate continuous growth of crystals by the Czochralski method suitable for producing single silicon crystals for use in solar cells is presented. The growth of at least 150 kg of mono silicon crystal, 150 mm in diameter is continuous from one growth container. A furnace with continuous liquid replenishment of the growth crucible, accomplished by a meltdown system with a continuous solid silicon feed mechanism and a liquid transfer system, with associated automatic feedback controls is discussed. Due to the silicon monoxide build up in the furnace and its retarding effect on crystal growth the furnace conversion for operation in the low pressure range is described. Development of systems for continuous solid recharging of the meltdown chamber for various forms of poly silicon is described.

  14. Numerical investigation of flows in Czochralski crystal growth by an axisymmetric lattice Boltzmann method

    International Nuclear Information System (INIS)

    Peng, Y.; Shu, C.; Chew, Y.T.; Qiu, J.

    2003-01-01

    An alternative new method called lattice Boltzmann method (LBM) is applied in this work to simulate the flows in Czochralski crystal growth, which is one of the widely used prototypical systems for melt-crystal growth. The standard LBM can only be used in Cartesian coordinate system and we extend it to be applicable to this axisymmetric thermal flow problem, avoiding the use of three-dimensional LBM on Cartesian coordinate system. The extension is based on the following idea. By inserting position and time dependent source terms into the evolution equation of standard LBM, the continuity and NS equations on the cylindrical coordinate system can be recovered. Our extension is validated by its application to the benchmark problem suggested by Wheeler

  15. Hydrogen diffusion at moderate temperatures in p-type Czochralski silicon

    International Nuclear Information System (INIS)

    Huang, Y.L.; Ma, Y.; Job, R.; Ulyashin, A.G.

    2004-01-01

    In plasma-hydrogenated p-type Czochralski silicon, rapid thermal donor (TD) formation is achieved, resulting from the catalytic support of hydrogen. The n-type counter doping by TD leads to a p-n junction formation. A simple method for the indirect determination of the diffusivity of hydrogen via applying the spreading resistance probe measurements is presented. Hydrogen diffusion in silicon during both plasma hydrogenation and post-hydrogenation annealing is investigated. The impact of the hydrogenation duration, annealing temperature, and resistivity of the silicon wafers on the hydrogen diffusion is discussed. Diffusivities of hydrogen are determined in the temperature range 270-450 deg. C. The activation energy for the hydrogen diffusion is deduced to be 1.23 eV. The diffusion of hydrogen is interpreted within the framework of a trap-limited diffusion mechanism. Oxygen and hydrogen are found to be the main traps

  16. Numerical investigation of flows in Czochralski crystal growth by an axisymmetric lattice Boltzmann method

    CERN Document Server

    Peng, Y; Chew, Y T; Qiu, J

    2003-01-01

    An alternative new method called lattice Boltzmann method (LBM) is applied in this work to simulate the flows in Czochralski crystal growth, which is one of the widely used prototypical systems for melt-crystal growth. The standard LBM can only be used in Cartesian coordinate system and we extend it to be applicable to this axisymmetric thermal flow problem, avoiding the use of three-dimensional LBM on Cartesian coordinate system. The extension is based on the following idea. By inserting position and time dependent source terms into the evolution equation of standard LBM, the continuity and NS equations on the cylindrical coordinate system can be recovered. Our extension is validated by its application to the benchmark problem suggested by Wheeler .

  17. Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jiahe; Yang, Deren [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou (China)

    2009-07-01

    Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect in Cz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Combined effects of crucible geometry and Marangoni convection on silicon Czochralski crystal growth

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, F. [Unit of Developpement of Silicon Technologie, Algiers (Algeria); Bouabdallah, A.; Zizi, M. [LTSE Laboratory, University of Science and Technology USTHB., Babezzouar, Algiers (Algeria); Hanchi, S. [UER Mecanique/ E.M.P/ B.P, El Bahri/Alger (Algeria); Alemany, A. [Laboratoire EPM, CNRS, Grenoble (France)

    2009-08-15

    In order to understand the influence of crucible geometry combined with natural convection and Marangoni convection on melt flow pattern, temperature and pressure fields in silicon Czochralski crystal growth process, a set of numerical simulations was conducted. We carry out calculation enable us to determine temperature, pressure and velocity fields in function of Grashof and Marangoni numbers. The essential results show that the hemispherical geometry of crucible seems to be adapted for the growth of a good quality crystal and the pressure field is strongly affected by natural and Marangoni convection and it is more sensitive than temperature. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

    CERN Document Server

    Tuominen, Eija

    2012-01-01

    The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

  20. Processing and first characterization of detectors made with high resistivity n- and p-type Czochralski silicon

    International Nuclear Information System (INIS)

    Bruzzi, M.; Bisello, D.; Borrello, L.; Borchi, E.; Boscardin, M.; Candelori, A.; Creanza, D.; Dalla Betta, G.-F.; DePalma, M.; Dittongo, S.; Focardi, E.; Khomenkov, V.; Litovchenko, A.; Macchiolo, A.; Manna, N.; Menichelli, D.; Messineo, A.; Miglio, S.; Petasecca, M.; Piemonte, C.; Pignatel, G.U.; Radicci, V.; Ronchin, S.; Scaringella, M.; Segneri, G.; Sentenac, D.; Tosi, C.; Zorzi, N.

    2005-01-01

    We report on the design, manufacturing and first characterisation of pad diodes, test structures and microstrip detectors processed with high resistivity magnetic Czochralski (MCz) p- and n-type Si. The pre-irradiation study on newly processed microstrip detectors and test structures show a good overall quality of the processed wafers. After irradiation with 24 GeV/c protons up to 4x10 14 cm -2 the characterisation of n-on-p and p-on-n MCz Si sensors with the C-V method show a decrease of the full depletion voltage and no space charge sign inversion. Microscopic characterisation has been performed to study the role of thermal donors in Czochralski Si. No evidence of thermal donor activation was observed in n-type MCz Si detectors if contact sintering was performed at a temperature lower than 380 deg. C and the final passivation oxide was omitted

  1. Epitaxially Grown Layered MFI–Bulk MFI Hybrid Zeolitic Materials

    KAUST Repository

    Kim, Wun-gwi; Zhang, Xueyi; Lee, Jong Suk; Tsapatsis, Michael; Nair, Sankar

    2012-01-01

    The synthesis of hybrid zeolitic materials with complex micropore-mesopore structures and morphologies is an expanding area of recent interest for a number of applications. Here we report a new type of hybrid zeolite material, composed of a layered

  2. Bulk oil clauses

    International Nuclear Information System (INIS)

    Gough, N.

    1993-01-01

    The Institute Bulk Oil Clauses produced by the London market and the American SP-13c Clauses are examined in detail in this article. The duration and perils covered are discussed, and exclusions, adjustment clause 15 of the Institute Bulk Oil Clauses, Institute War Clauses (Cargo), and Institute Strikes Clauses (Bulk Oil) are outlined. (UK)

  3. Basic theory of diameter control in Czochralski growth using the melt-weighing technique

    International Nuclear Information System (INIS)

    Johansen, T.H.

    1986-04-01

    The unconfined crystal growth in the Czochralski configuration is recognized as a process which is quite dependent upon successful control of the shape determining conditions. In the paper attention is focused on the meniscus region, and its relevance to the crystal diameter behaviour is discussed. The dynamic stability of the configuration is analyzed according to the Surek criterion. In contrast to earlier zeroth order arguments, the system is shown to be inherently stable at normal growth conditions if the thermal impedance of the meniscus is taken into account. General difficulties associated with small diameter growth are pointed out. Reference is made to various growth monitoring arrangements, and the melt-weighing method is described in detail. Assuming uniform growth with a flat interface, the exact relation between the force experienced by a weighing cell and the growth parameters during both stationary and non-stationary conditions is derived. Growth at a constant angle is analyzed, and a new procedure for deriving the crystal diameter is suggested

  4. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    International Nuclear Information System (INIS)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang; Yang, Deren; Lu, Yunhao

    2014-01-01

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B 2 I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition

  5. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Chao; Dong, Peng; Yi, Jun; Ma, Xiangyang, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn; Yang, Deren [State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China); Lu, Yunhao, E-mail: luyh@zju.edu.cn, E-mail: mxyoung@zju.edu.cn [International Center for New-Structured Materials and Laboratory of New-Structured Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2014-01-20

    The changes in hole concentration of heavily boron (B)-doped Czochralski silicon subjected to high temperature rapid thermal anneal (RTA) and following conventional furnace anneal (CFA) have been investigated. It is found that decrease in hole concentration, namely, B deactivation, is observed starting from 1050 °C and increases with RTA temperature. The following CFA at 300–500 °C leads to further B deactivation, while that at 600–800 °C results in B reactivation. It is supposed that the interaction between B atoms and silicon interstitials (I) thus forming BI pairs leads to the B deactivation during the high temperature RTA, and, moreover, the formation of extended B{sub 2}I complexes results in further B deactivation in the following CFA at 300–500 °C. On the contrary, the dissociation of BI pairs during the following CFA at 600–800 °C enables the B reactivation. Importantly, the first-principles calculation results can soundly account for the above-mentioned supposition.

  6. Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

    International Nuclear Information System (INIS)

    Chroneos, A.; Londos, C. A.; Sgourou, E. N.

    2011-01-01

    Experimental and theoretical techniques are used to investigate the impact of tin doping on the formation and the thermal stability of oxygen- and carbon-related defects in electron-irradiated Czochralski silicon. The results verify previous reports that Sn doping reduces the formation of the VO defect and suppresses its conversion to the VO 2 defect. Within experimental accuracy, a small delay in the growth of the VO 2 defect is observed. Regarding carbon-related defects, it is determined that Sn doping leads to a reduction in the formation of the C i O i , C i C s , and C i O i (Si I ) defects although an increase in their thermal stability is observed. The impact of strain induced in the lattice by the larger tin substitutional atoms, as well as their association with intrinsic defects and carbon impurities, can be considered as an explanation to account for the above observations. The density functional theory calculations are used to study the interaction of tin with lattice vacancies and oxygen- and carbon-related clusters. Both experimental and theoretical results demonstrate that tin co-doping is an efficient defect engineering strategy to suppress detrimental effects because of the presence of oxygen- and carbon-related defect clusters in devices.

  7. Forced and thermocapillary convection in silicon Czochralski crystal growth in semispherical crucible

    Energy Technology Data Exchange (ETDEWEB)

    Mokhtari, F [Physics Department, Faculty of Science, University of Mouloud Mammeri, Tizi Ouzou (Algeria); Bouabdallah, A; Zizi, M [LTSE Laboratory, University of Science and Technology USTHB. BP 32 Elalia, Babezzouar, Algiers (Algeria); Hanchi, S [UER Mecanique/ E.M.P B.P 17, Bordj El Bahri, Algiers (Algeria); Alemany, A, E-mail: abouab2002@yahoo.f [Laboratoire EPM, CNRS, Grenoble (France)

    2010-03-01

    In order to understand the influence of a semispherical crucible geometry combined with different convection modes as a thermocapillary convection, natural convection and forced convection, induced by crystal rotation, on melt flow pattern in silicon Czochralski crystal growth process, a set of numerical simulations are conducted using Fluent Software. We solve the system of equations of heat and momentum transfer in classical geometry as cylindrical and modified crystal growth process geometry as cylindro-spherical. In addition, we adopt hypothesis adapted to boundary conditions near the interface and calculations are executed to determine temperature, pressure and velocity fields versus Grashof and Reynolds numbers. The analysis of the obtained results led to conclude that there is advantage to modify geometry in comparison with the traditional one. The absence of the stagnation regions of fluid in the hemispherical crucible corner and the possibility to control the melt flow using the crystal rotation enhances the quality of the process comparatively to the cylindrical one. The pressure field is strongly related to the swirl velocity.

  8. Forced and thermocapillary convection in silicon Czochralski crystal growth in semispherical crucible

    International Nuclear Information System (INIS)

    Mokhtari, F; Bouabdallah, A; Zizi, M; Hanchi, S; Alemany, A

    2010-01-01

    In order to understand the influence of a semispherical crucible geometry combined with different convection modes as a thermocapillary convection, natural convection and forced convection, induced by crystal rotation, on melt flow pattern in silicon Czochralski crystal growth process, a set of numerical simulations are conducted using Fluent Software. We solve the system of equations of heat and momentum transfer in classical geometry as cylindrical and modified crystal growth process geometry as cylindro-spherical. In addition, we adopt hypothesis adapted to boundary conditions near the interface and calculations are executed to determine temperature, pressure and velocity fields versus Grashof and Reynolds numbers. The analysis of the obtained results led to conclude that there is advantage to modify geometry in comparison with the traditional one. The absence of the stagnation regions of fluid in the hemispherical crucible corner and the possibility to control the melt flow using the crystal rotation enhances the quality of the process comparatively to the cylindrical one. The pressure field is strongly related to the swirl velocity.

  9. Effects of growth conditions on thermal profiles during Czochralski silicon crystal growth

    Science.gov (United States)

    Choe, Kwang Su; Stefani, Jerry A.; Dettling, Theodore B.; Tien, John K.; Wallace, John P.

    1991-01-01

    An eddy current testing method was used to continuously monitor crystal growth process and investigate the effects of growth conditions on thermal profiles during Czochralski silicon crystal growth. The experimental concept was to monitor the intrinsic electrical conductivities of the growing crystal and deduce temperature values from them. In terms of the experiments, the effects of changes in growth parameters, which include the crystal and crucible rotation rates, crucible position, and pull rate, and hot-zone geometries were investigated. The results show that the crystal thermal profile could shift significantly as a function of crystal length if the closed-loop control fails to maintain a constant thermal condition. As a direct evidence to the effects of the melt flow on heat transfer processes, a thermal gradient minimum was observed when the crystal/crucible rotation combination was 20/-10 rpm cw. The thermal gradients in the crystal near the growth interface were reduced most by decreasing the pull rate or by reducing the radiant heat loss to the environment; a nearly constant axial thermal gradient was achieved when either the pull rate was decreased by half, the height of the exposed crucible wall was doubled, or a radiation shield was placed around the crystal. Under these conditions, the average axial thermal gradient along the surface of the crystal was about 4-5°C/mm. When compared to theoretical results found in literature, the axial profiles correlated well with the results of the models which included radiant interactions. However, the radial gradients estimated from three-frequency data were much higher than what were predicted by known theoretical models. This discrepancy seems to indicate that optical phenomenon within the crystal is significant and should be included in theoretical modeling.

  10. Computational analysis of heat transfer, thermal stress and dislocation density during resistively Czochralski growth of germanium single crystal

    Science.gov (United States)

    Tavakoli, Mohammad Hossein; Renani, Elahe Kabiri; Honarmandnia, Mohtaram; Ezheiyan, Mahdi

    2018-02-01

    In this paper, a set of numerical simulations of fluid flow, temperature gradient, thermal stress and dislocation density for a Czochralski setup used to grow IR optical-grade Ge single crystal have been done for different stages of the growth process. A two-dimensional steady state finite element method has been applied for all calculations. The obtained numerical results reveal that the thermal field, thermal stress and dislocation structure are mainly dependent on the crystal height, heat radiation and gas flow in the growth system.

  11. Numerical modeling of Czochralski growth of Li2MoO4 crystals for heat-scintillation cryogenic bolometers

    Science.gov (United States)

    Stelian, Carmen; Velázquez, Matias; Veber, Philippe; Ahmine, Abdelmounaim; Sand, Jean-Baptiste; Buşe, Gabriel; Cabane, Hugues; Duffar, Thierry

    2018-06-01

    Lithium molybdate Li2MoO4 (LMO) crystals of mass ranging between 350 and 500 g are excellent candidates to build heat-scintillation cryogenic bolometers likely to be used for the detection of rare events in astroparticle physics. In this work, numerical modeling is applied in order to investigate the Czochralski growth of Li2MoO4 crystals in an inductive furnace. The numerical model was validated by comparing the numerical predictions of the crystal-melt interface shape to experimental visualization of the growth interface. Modeling was performed for two different Czochralski furnaces that use inductive heating. The simulation of the first furnace, which was used to grow Li2MoO4 crystals of 3-4 cm in diameter, reveals non-optimal heat transfer conditions for obtaining good quality crystals. The second furnace, which will be used to grow crystals of 5 cm in diameter, was numerically optimized in order to reduce the temperature gradients in the crystal and to avoid fast crystallization of the bath at the later stages of the growth process.

  12. Large area bulk superconductors

    Science.gov (United States)

    Miller, Dean J.; Field, Michael B.

    2002-01-01

    A bulk superconductor having a thickness of not less than about 100 microns is carried by a polycrystalline textured substrate having misorientation angles at the surface thereof not greater than about 15.degree.; the bulk superconductor may have a thickness of not less than about 100 microns and a surface area of not less than about 50 cm.sup.2. The textured substrate may have a thickness not less than about 10 microns and misorientation angles at the surface thereof not greater than about 15.degree.. Also disclosed is a process of manufacturing the bulk superconductor and the polycrystalline biaxially textured substrate material.

  13. Remarks on Prof. Michał Kokowski’s comment about the studies into the life of Prof. Jan Czochralski (in Polish

    Directory of Open Access Journals (Sweden)

    Paweł E. TOMASZEWSKI

    2015-12-01

    Full Text Available Remarks on the critical comments regarding the contents of the paper published after the presentation delivered by the biographer of Prof. Jan Czochralski. Unfortunately, Prof. Kokowski used an incorrect historical approach to such a short paper. The remarks are presented in four main points.

  14. Continuous Czochralski growth. Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness

    Science.gov (United States)

    The improvement of growth rates using radiation shielding and investigation of the crucible melt interaction for improved yields were emphasized. Growth runs were performed from both 15 and 16 inch diameter crucibles, producing 30 and 37 kg ingots respectively. Efforts to increase the growth rate of 150 mm diameter ingots were limited by temperature instabilities believed to be caused by undesirable thermal convections in the larger melts. The radiation shield improved the growth rate somewhat, but the thermal instability was still evident, leading to nonround ingots and loss of dislocation-free structure. A 38 kg crystal was grown to demonstrate the feasibility of producing 150 kg with four growth cycles. After the grower construction phase, the Hamco microprocessor control system was interfaced to the growth facility, including the sensor for automatic control of seeding temperature, and the sensor for automatic shouldering. Efforts focused upon optimization of the seeding, necking, and shoulder growth automation programs.

  15. Recent results in characterization of melt-grown and quench-melt- grown YBCO superconductors

    International Nuclear Information System (INIS)

    Balachandran, U.; Poeppel, R.B.; Gangopadhyay, A.K.

    1992-02-01

    From the standpoint of applications, melt-grown (MG) and quench-melt-grown (QMG) bulk YBCO superconductors are of considerable interest. In this paper, we studied the intragranular critical current density (J c ), the apparent pinning potential (U o ), and the irreversibility temperature (T irr ) of MG and QMG samples and compared the results to those for conventionally sintered YBCO. A systematic increase in U o and a slower drop in J c with temperature indicate a systematic improvement in flux-pinning properties in progressing from the sintered YBCO to QMG and MG samples. Weaker pinning is observed in the QMG YBCO than in the MG samples

  16. Induction detection of concealed bulk banknotes

    International Nuclear Information System (INIS)

    Fuller, Christopher; Chen, Antao

    2011-01-01

    Bulk cash smuggling is a serious issue that has grown in volume in recent years. By building on the magnetic characteristics of paper currency, induction sensing is found to be capable of quickly detecting large masses of banknotes. The results show that this method is effective in detecting bulk cash through concealing materials such as plastics, cardboards, fabrics and aluminum foil. The significant difference in the observed phase between the received signals caused by conducting materials and ferrite compounds, found in banknotes, provides a good indication that this process can overcome the interference by metal objects in a real sensing application. This identification strategy has the potential to not only detect the presence of banknotes, but also the number, while still eliminating false positives caused by metal objects

  17. Superductile bulk metallic glass

    International Nuclear Information System (INIS)

    Yao, K.F.; Ruan, F.; Yang, Y.Q.; Chen, N.

    2006-01-01

    Usually, monolithic bulk metallic glasses undergo inhomogeneous plastic deformation and exhibit poor ductility (<2%) at room temperature. We report a newly developed Pd-Si binary bulk metallic glass, which exhibits a uniform plastic deformation and a large plastic engineering strain of 82% and a plastic true strain of 170%, together with initial strain hardening, slight strain softening and final strain hardening characteristics. The uniform shear deformation and the ultrahigh plasticity are mainly attributed to strain hardening, which results from the nanoscale inhomogeneity due to liquid phase separation. The formed nanoscale inhomogeneity will hinder, deflect, and bifurcate the propagation of shear bands

  18. Numerical and experimental study of a solid pellet feed continuous Czochralski growth process for silicon single crystals

    Science.gov (United States)

    Anselmo, A.; Prasad, V.; Koziol, J.; Gupta, K. P.

    1993-07-01

    A polysilicon pellets (≅1 mm diameter) feed continuous Czochralski (CCZ) growth process for silicon single crystals is proposed and investigated. Experiments in an industrial puller (14-18 inch diameter crucible) successfully demonstrate the feasibility of this process. The advantages of the proposed scheme are: a steady state growth process, a low aspect ratio melt, uniformity of heat addition and a growth apparatus with single crucible and no baffle(s). The addition of dopant with the solid charge will allow a better control of oxygen concentration leading to crystals of uniform properties and better quality. This paper presents theoretical results on melting of fully and partially immersed silicon spheres and numerical solutions on temperature and flow fields in low aspect ration melts with and without the addition of solid pellets. The theoretical and experimental results obtained thus far show a great promise for the proposed scheme.

  19. Auctioning Bulk Mobile Messages

    NARCIS (Netherlands)

    S. Meij (Simon); L-F. Pau (Louis-François); H.W.G.M. van Heck (Eric)

    2003-01-01

    textabstractThe search for enablers of continued growth of SMS traffic, as well as the take-off of the more diversified MMS message contents, open up for enterprises the potential of bulk use of mobile messaging , instead of essentially one-by-one use. In parallel, such enterprises or value added

  20. Diffusion or bulk flow

    DEFF Research Database (Denmark)

    Schulz, Alexander

    2015-01-01

    is currently matter of discussion, called passive symplasmic loading. Based on the limited material available, this review compares the different loading modes and suggests that diffusion is the driving force in apoplasmic loaders, while bulk flow plays an increasing role in plants having a continuous...

  1. Ferromagnetic bulk glassy alloys

    International Nuclear Information System (INIS)

    Inoue, Akihisa; Makino, Akihiro; Mizushima, Takao

    2000-01-01

    This paper deals with the review on the formation, thermal stability and magnetic properties of the Fe-based bulk glassy alloys in as-cast bulk and melt-spun ribbon forms. A large supercooled liquid region over 50 K before crystallization was obtained in Fe-(Al, Ga)-(P, C, B, Si), Fe-(Cr, Mo, Nb)-(Al, Ga)-(P, C, B) and (Fe, Co, Ni)-Zr-M-B (M=Ti, Hf, V, Nb, Ta, Cr, Mo and W) systems and bulk glassy alloys were produced in a thickness range below 2 mm for the Fe-(Al, Ga)-(P, C, B, Si) system and 6 mm for the Fe-Co-(Zr, Nb, Ta)-(Mo, W)-B system by copper-mold casting. The ring-shaped glassy Fe-(Al, Ga)-(P, C, B, Si) alloys exhibit much better soft magnetic properties as compared with the ring-shaped alloy made from the melt-spun ribbon because of the formation of the unique domain structure. The good combination of high glass-forming ability and good soft magnetic properties indicates the possibility of future development as a new bulk glassy magnetic material

  2. Characterisation of bulk solids

    Energy Technology Data Exchange (ETDEWEB)

    D. McGlinchey [Glasgow Caledonian University, Glasgow (United Kingdom). Centre for Industrial Bulk Solids Handling

    2005-07-01

    Handling of powders and bulk solids is a critical industrial technology across a broad spectrum of industries, including minerals processing. With contributions from leading authors in their respective fields, this book provides the reader with a sound understanding of the techniques, importance and application of particulate materials characterisation. It covers the fundamental characteristics of individual particles and bulk particulate materials, and includes discussion of a wide range of measurement techniques, and the use of material characteristics in design and industrial practice. Contents: Characterising particle properties; Powder mechanics and rheology; Characterisation for hopper and stockpile design; Fluidization behaviour; Characterisation for pneumatic conveyor design; Explosiblility; 'Designer' particle characteristics; Current industrial practice; and Future trends. 130 ills.

  3. Micromegas in a bulk

    International Nuclear Information System (INIS)

    Giomataris, I.; De Oliveira, R.; Andriamonje, S.; Aune, S.; Charpak, G.; Colas, P.; Fanourakis, G.; Ferrer, E.; Giganon, A.; Rebourgeard, Ph.; Salin, P.

    2006-01-01

    In this paper, we present a novel way to manufacture the bulk Micromegas detector. A simple process based on the Printed Circuit Board (PCB) technology is employed to produce the entire sensitive detector. Such a fabrication process could be extended to very large area detectors made by the industry. The low cost fabrication together with the robustness of the electrode materials will make it attractive for several applications ranging from particle physics and astrophysics to medicine

  4. Role of electrode metallization in the performance of bulk semi-insulating InP radiation detectors

    International Nuclear Information System (INIS)

    Zatko, B.; Dubecky, F.; Prochazkova, O.; Necas, V.

    2007-01-01

    This work deals with the study of three different electrode metallizations with the aim to form a Schottky barrier contact. Electrode geometry corresponds to the requirements of digital radiography systems. As substrates bulk Liquid Encapsulated Czochralski (LEC) SI InP wafers doped with Fe and Fe+Zn are used. Results of this study show that no one of the used metallization performs as a blocking contact. However, detectors with Ti/Pt/Au metallization attained a relatively good energy resolution of 7.0 keV in full-width at half-maximum (FWHM) and the charge collection efficiency (CCE) higher than 83% for 122 keV γ-photons at 255 K. The development of SI InP radiation detectors and in particular their electrode technology is discussed in the light of observed results

  5. Bulk-Fill Resin Composites

    DEFF Research Database (Denmark)

    Benetti, Ana Raquel; Havndrup-Pedersen, Cæcilie; Honoré, Daniel

    2015-01-01

    the restorative procedure. The aim of this study, therefore, was to compare the depth of cure, polymerization contraction, and gap formation in bulk-fill resin composites with those of a conventional resin composite. To achieve this, the depth of cure was assessed in accordance with the International Organization...... for Standardization 4049 standard, and the polymerization contraction was determined using the bonded-disc method. The gap formation was measured at the dentin margin of Class II cavities. Five bulk-fill resin composites were investigated: two high-viscosity (Tetric EvoCeram Bulk Fill, SonicFill) and three low......-viscosity (x-tra base, Venus Bulk Fill, SDR) materials. Compared with the conventional resin composite, the high-viscosity bulk-fill materials exhibited only a small increase (but significant for Tetric EvoCeram Bulk Fill) in depth of cure and polymerization contraction, whereas the low-viscosity bulk...

  6. Control of heat transfer in continuous-feeding Czochralski-silicon crystal growth with a water-cooled jacket

    Science.gov (United States)

    Zhao, Wenhan; Liu, Lijun

    2017-01-01

    The continuous-feeding Czochralski method is an effective method to reduce the cost of single crystal silicon. By promoting the crystal growth rate, the cost can be reduced further. However, more latent heat will be released at the melt-crystal interface under a high crystal growth rate. In this study, a water-cooled jacket was applied to enhance the heat transfer at the melt-crystal interface. Quasi-steady-state numerical calculation was employed to investigate the impact of the water-cooled jacket on the heat transfer at the melt-crystal interface. Latent heat released during the crystal growth process at the melt-crystal interface and absorbed during feedstock melting at the feeding zone was modeled in the simulations. The results show that, by using the water-cooled jacket, heat transfer in the growing crystal is enhanced significantly. Melt-crystal interface deflection and thermal stress increase simultaneously due to the increase of radial temperature at the melt-crystal interface. With a modified heat shield design, heat transfer at the melt-crystal interface is well controlled. The crystal growth rate can be increased by 20%.

  7. Numerical simulation of convection and heat transfer in Czochralski crystal growth by multiple-relaxation-time LBM

    Science.gov (United States)

    Liu, Ding; Huang, Weichao; Zhang, Ni

    2017-07-01

    A two-dimensional axisymmetric swirling model based on the lattice Boltzmann method (LBM) in a pseudo Cartesian coordinate system is posited to simulate Czochralski (Cz) crystal growth in this paper. Specifically, the multiple-relaxation-time LBM (MRT-LBM) combined with the finite difference method (FDM) is used to analyze the melt convection and heat transfer in the process of Cz crystal growth. An incompressible axisymmetric swirling MRT-LB D2Q9 model is applied to solve for the axial and radial velocities by inserting thermal buoyancy and rotational inertial force into the two-dimensional lattice Boltzmann equation. In addition, the melt temperature and the azimuthal velocity are solved by MRT-LB D2Q5 models, and the crystal temperature is solved by FDM. The comparison results of stream functions values of different methods demonstrate that our hybrid model can be used to simulate the fluid-thermal coupling in the axisymmetric swirling model correctly and effectively. Furthermore, numerical simulations of melt convection and heat transfer are conducted under the conditions of high Grashof (Gr) numbers, within the range of 105 ˜ 107, and different high Reynolds (Re) numbers. The experimental results show our hybrid model can obtain the exact solution of complex crystal-growth models and analyze the fluid-thermal coupling effectively under the combined action of natural convection and forced convection.

  8. Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

    International Nuclear Information System (INIS)

    Wang Hong-Zhe; Zheng Song-Sheng; Chen Chao

    2015-01-01

    The effect of thermal annealing on the light-induced effective minority carrier lifetime enhancement (LIE) phenomenon is investigated on the p-type Czochralski silicon (Cz-Si) wafer passivated by a phosphorus-doped silicon nitride (P-doped SiN_x) thin film. The experimental results show that low temperature annealing (below 300°C) can not only increase the effective minority carrier lifetime of P-doped SiN_x passivated boron-doped Cz-Si, but also improve the LIE phenomenon. The optimum annealing temperature is 180°C, and its corresponding effective minority carrier lifetime can be increased from initial 7.5 μs to maximum 57.7 μs by light soaking within 15 min after annealing. The analysis results of high-frequency dark capacitance-voltage characteristics reveal that the mechanism of the increase of effective minority carrier lifetime after low temperature annealing is due to the sharp enhancement of field effect passivation induced by the negative fixed charge density, while the mechanism of the LIE phenomenon after low temperature annealing is attributed to the enhancement of both field effect passivation and chemical passivation. (paper)

  9. Numerical Simulation of Yttrium Aluminum Garnet(YAG) Single Crystal Growth by Resistance Heating Czochralski(CZ) Method

    Energy Technology Data Exchange (ETDEWEB)

    You, Myeong Hyeon; Cha, Pil Ryung [Kookmin University, Seoul (Korea, Republic of)

    2017-01-15

    Yttrium Aluminum Garnet (YAG) single crystal has received much attention as the high power solid-state laser’s key component in industrial and medical applications. Various growth methods have been proposed, and currently the induction-heating Czochralski (IHCZ) growth method is mainly used to grow YAG single crystal. Due to the intrinsic properties of the IHCZ method, however, the solid/liquid interface has a downward convex shape and a sharp tip at the center, which causes a core defect and reduces productivity. To produce YAG single crystals with both excellent quality and higher yield, it is essential to control the core defects. In this study, using computer simulations we demonstrate that the resistance-heating CZ (RHCZ) method may avoid a downward convex interface and produce core defect free YAG single crystal. We studied the effects of various design parameters on the interface shape and found that there was an optimum combination of design parameter and operating conditions that produced a flat solid-liquid interface.

  10. Bulk muscles, loose cables.

    Science.gov (United States)

    Liyanage, Chamari R D G; Kodali, Venkata

    2014-10-17

    The accessibility and usage of body building supplements is on the rise with stronger internet marketing strategies by the industry. The dangers posed by the ingredients in them are underestimated. A healthy young man came to the emergency room with palpitations and feeling unwell. Initial history and clinical examination were non-contributory to find the cause. ECG showed atrial fibrillation. A detailed history for any over the counter or herbal medicine use confirmed that he was taking supplements to bulk muscle. One of the components in these supplements is yohimbine; the onset of symptoms coincided with the ingestion of this product and the patient is symptom free after stopping it. This report highlights the dangers to the public of consuming over the counter products with unknown ingredients and the consequential detrimental impact on health. 2014 BMJ Publishing Group Ltd.

  11. Diode-pumped laser with Yb:YAG single-crystal fiber grown by the micro-pulling down technique

    Science.gov (United States)

    Sangla, D.; Aubry, N.; Didierjean, J.; Perrodin, D.; Balembois, F.; Lebbou, K.; Brenier, A.; Georges, P.; Tillement, O.; Fourmigué, J.-M.

    2009-02-01

    Laser emission obtained from an Yb:YAG single-crystal fiber directly grown by the micro-pulling down technique is demonstrated for the first time. We achieved 11.2 W of continuous wave (CW) output power at 1031 nm for 55 W of incident pump power at 940 nm. In the Q-switched regime, we obtained pulses as short as 17 ns, for an average power of 2.3 W at 2 kHz corresponding to an energy of 1.15 mJ. In both cases, the M 2 factor was 2.5. This single-crystal fiber showed performance similar to a standard rod elaborated by the Czochralski method. The potential of Yb3+-doped single-crystal fibers is presented for scalable high-average and high-peak-power laser systems.

  12. Graphic Grown Up

    Science.gov (United States)

    Kim, Ann

    2009-01-01

    It's no secret that children and YAs are clued in to graphic novels (GNs) and that comics-loving adults are positively giddy that this format is getting the recognition it deserves. Still, there is a whole swath of library card-carrying grown-up readers out there with no idea where to start. Splashy movies such as "300" and "Spider-Man" and their…

  13. Microfabricated Bulk Piezoelectric Transformers

    Science.gov (United States)

    Barham, Oliver M.

    Piezoelectric voltage transformers (PTs) can be used to transform an input voltage into a different, required output voltage needed in electronic and electro- mechanical systems, among other varied uses. On the macro scale, they have been commercialized in electronics powering consumer laptop liquid crystal displays, and compete with an older, more prevalent technology, inductive electromagnetic volt- age transformers (EMTs). The present work investigates PTs on smaller size scales that are currently in the academic research sphere, with an eye towards applications including micro-robotics and other small-scale electronic and electromechanical sys- tems. PTs and EMTs are compared on the basis of power and energy density, with PTs trending towards higher values of power and energy density, comparatively, indicating their suitability for small-scale systems. Among PT topologies, bulk disc-type PTs, operating in their fundamental radial extension mode, and free-free beam PTs, operating in their fundamental length extensional mode, are good can- didates for microfabrication and are considered here. Analytical modeling based on the Extended Hamilton Method is used to predict device performance and integrate mechanical tethering as a boundary condition. This model differs from previous PT models in that the electric enthalpy is used to derive constituent equations of motion with Hamilton's Method, and therefore this approach is also more generally applica- ble to other piezoelectric systems outside of the present work. Prototype devices are microfabricated using a two mask process consisting of traditional photolithography combined with micropowder blasting, and are tested with various output electri- cal loads. 4mm diameter tethered disc PTs on the order of .002cm. 3 , two orders smaller than the bulk PT literature, had the followingperformance: a prototype with electrode area ratio (input area / output area) = 1 had peak gain of 2.3 (+/- 0.1), efficiency of 33 (+/- 0

  14. Developing bulk exchange spring magnets

    Science.gov (United States)

    Mccall, Scott K.; Kuntz, Joshua D.

    2017-06-27

    A method of making a bulk exchange spring magnet by providing a magnetically soft material, providing a hard magnetic material, and producing a composite of said magnetically soft material and said hard magnetic material to make the bulk exchange spring magnet. The step of producing a composite of magnetically soft material and hard magnetic material is accomplished by electrophoretic deposition of the magnetically soft material and the hard magnetic material to make the bulk exchange spring magnet.

  15. A new family of thermal donors generated around 450 °C in phosphorus-doped Czochralski silicon

    Science.gov (United States)

    Kamiura, Yoichi; Hashimoto, Fumio; Yoneta, Minoru

    1989-01-01

    We have discovered a new family of oxygen-related double donors [new thermal donors (NTD's)] generated around 450 °C in phosphorus-doped Czochralski silicon by combining deep-level transient spectroscopy with Hall measurements. This new family was well distinguished from the normal family of thermal donors (TD's) currently studied so far. Our results have shown that both families of thermal donors exhibit qualitatively the same kinetic behavior. Namely, as the annealing time increases, their ionization energy of levels continuously decrease with their densities increasing until the maxima and then become constant with their densities decreasing. However, there are significantly quantitative differences between the both families; NTD's have shallower levels, considerably smaller generation rates, and higher thermal stability than TD's. Sufficiently prolonged annealing for more than 105 min around 450 °C or short donor-killing annealing for 20 min at 650 °C completely annihilates TD's, leaving only NTD's, of which the most stable and therefore most shallow species have been suggested by our Hall measurements to have donor levels at 0.04 and 0.09 eV below the conduction-band edge. The density of interstitial oxygen still continues to decrease even after prolonged annealing for more than 105 min, where NTD's are present in a stable condition in a concentration of 1×1015 cm-3. NTD's may correlate with the NL10 electron paramagnetic resonance center because of similarities in their generation kinetics. We have suggested a hypothesis that NTD's have similar defect structures as TD's and that an unknown nucleus involved in the core of NTD's plays an essential role in lowering their ionization energy of levels and generation rates and also in stabilizing their donor activity.

  16. Mining the bulk positron lifetime

    International Nuclear Information System (INIS)

    Aourag, H.; Guittom, A.

    2009-01-01

    We introduce a new approach to investigate the bulk positron lifetimes of new systems based on data-mining techniques. Through data mining of bulk positron lifetimes, we demonstrate the ability to predict the positron lifetimes of new semiconductors on the basis of available semiconductor data already studied. Informatics techniques have been applied to bulk positron lifetimes for different tetrahedrally bounded semiconductors in order to discover computational design rules. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Calculations of shape and stability of menisci in Czochralski growth with tables to determine meniscus heights, maximum heights and capillary constants

    International Nuclear Information System (INIS)

    Uelhoff, W.; Mika, K.

    1975-05-01

    The shape and stability of menisci occurring during Czochralski growth have been studied by means of numerical methods for the case of the free surface. The existence of minimal joining angles is shown, beyond which the growing crystal will separate from the melt. The dependence of the interface height on the joining angle for different crystal diameters was calculated. The maximum stable heights and the corresponding joining angles were determined as a function of crystal diameter. A method for measuring the capillary constant of the melt during Czochralski growth is proposed. The results are compared with known analytical approximations. Limitations of the applications caused by a finite crucible radius or low g values are pointed out. For practical use the following functions have been tabulated: 1) meniscus height in dependence on joining angle and crystal radius, 2) the radius-height-ratio in dependence on radius and angle for the calculation of the capillary constant, 3) the maximum stable height and the corresponding growth angle as a function of crystal radius. (orig.) [de

  18. Crystal growth and piezoelectric properties of Ca3Ta(Ga0.9Sc0.1)3Si2O14 bulk single crystal

    Science.gov (United States)

    Igarashi, Yu; Yokota, Yuui; Ohashi, Yuji; Inoue, Kenji; Yamaji, Akihiro; Shoji, Yasuhiro; Kamada, Kei; Kurosawa, Shunsuke; Yoshikawa, Akira

    2018-03-01

    Ca3Ta(Ga0.9Sc0.1)3Si2O14 langasite-type single crystal with a diameter of 1 in. was grown by Czochralski (Cz) method. Obtained crystal had good crystallinity and its lattice constants exceeded those of Ca3TaGa3Si2O14 (CTGS) according to the X-ray analysis. A crack-free specimen cut from the grown crystal was used for the measurements of dielectric constant ε11T/ε0, electromechanical coupling factor k12, and piezoelectric constant d11. The accuracies of these measurements were better than those for the crystal grown by micro-pulling-down (μ-PD) method. Substitution of Ga with Sc resulted modification of these constants in the directions opposite to those observed after partial substitution of Ga (of CTGS) with Al. This suggests that increase of |d14| was most probably associated with enlargement of average size of the Ga sites. The crystal reported here had greater dimensions as compared to analogous crystals grown by the μ-PD method. As a result, accuracy of determination of acoustic constants of this material may be improved.

  19. Hydrothermally grown zeolite crystals

    International Nuclear Information System (INIS)

    Durrani, S.K.; Qureshi, A.H.; Hussain, M.A.; Qazi, N.K.

    2009-01-01

    The aluminium-deficient and ferrosilicate zeolite-type materials were synthesized by hydrothermal process at 150-170 degree C for various periods of time from the mixtures containing colloidal reactive silica, sodium aluminate, sodium hydroxide, iron nitrate and organic templates. Organic polycation templates were used as zeolite crystal shape modifiers to enhance relative growth rates. The template was almost completely removed from the zeolite specimens by calcination at 550 degree C for 8h in air. Simultaneous thermogravimetric (TG) and differential thermal analysis (DTA) was performed to study the removal of water molecules and the amount of organic template cations occluded inside the crystal pore of zeolite framework. The 12-13% weight loss in the range of (140-560 degree C) was associated with removal of the (C/sub 3/H/sub 7/)/sub 4/ N+ cation and water molecules. X-ray diffraction (XRD) analysis and scanning electron microscope (SEM) techniques were employed to study the structure, morphology and surface features of hydrothermally grown aluminium-deficient and ferrosilicate zeolite-type crystals. In order to elucidate the mode of zeolite crystallization the crystallinity and unit cell parameters of the materials were determined by XRD, which are the function of Al and Fe contents of zeolites. (author)

  20. Modelling of bulk superconductor magnetization

    International Nuclear Information System (INIS)

    Ainslie, M D; Fujishiro, H

    2015-01-01

    This paper presents a topical review of the current state of the art in modelling the magnetization of bulk superconductors, including both (RE)BCO (where RE = rare earth or Y) and MgB 2 materials. Such modelling is a powerful tool to understand the physical mechanisms of their magnetization, to assist in interpretation of experimental results, and to predict the performance of practical bulk superconductor-based devices, which is particularly important as many superconducting applications head towards the commercialization stage of their development in the coming years. In addition to the analytical and numerical techniques currently used by researchers for modelling such materials, the commonly used practical techniques to magnetize bulk superconductors are summarized with a particular focus on pulsed field magnetization (PFM), which is promising as a compact, mobile and relatively inexpensive magnetizing technique. A number of numerical models developed to analyse the issues related to PFM and optimise the technique are described in detail, including understanding the dynamics of the magnetic flux penetration and the influence of material inhomogeneities, thermal properties, pulse duration, magnitude and shape, and the shape of the magnetization coil(s). The effect of externally applied magnetic fields in different configurations on the attenuation of the trapped field is also discussed. A number of novel and hybrid bulk superconductor structures are described, including improved thermal conductivity structures and ferromagnet–superconductor structures, which have been designed to overcome some of the issues related to bulk superconductors and their magnetization and enhance the intrinsic properties of bulk superconductors acting as trapped field magnets. Finally, the use of hollow bulk cylinders/tubes for shielding is analysed. (topical review)

  1. Grown on Novel Microcarriers

    Directory of Open Access Journals (Sweden)

    Torsten Falk

    2012-01-01

    Full Text Available Human retinal pigment epithelial (hRPE cells have been tested as a cell-based therapy for Parkinson’s disease but will require additional study before further clinical trials can be planned. We now show that the long-term survival and neurotrophic potential of hRPE cells can be enhanced by the use of FDA-approved plastic-based microcarriers compared to a gelatin-based microcarrier as used in failed clinical trials. The hRPE cells grown on these plastic-based microcarriers display several important characteristics of hRPE found in vivo: (1 characteristic morphological features, (2 accumulation of melanin pigment, and (3 high levels of production of the neurotrophic factors pigment epithelium-derived factor (PEDF and vascular endothelial growth factor-A (VEGF-A. Growth of hRPE cells on plastic-based microcarriers led to sustained levels (>1 ng/ml of PEDF and VEGF-A in conditioned media for two months. We also show that the expression of VEGF-A and PEDF is reciprocally regulated by activation of the GPR143 pathway. GPR143 is activated by L-DOPA (1 μM which decreased VEGF-A secretion as opposed to the previously reported increase in PEDF secretion. The hRPE microcarriers are therefore novel candidate delivery systems for achieving long-term delivery of the neuroprotective factors PEDF and VEGF-A, which could have a value in neurodegenerative conditions such as Parkinson’s disease.

  2. Bulk metallic glass matrix composites

    International Nuclear Information System (INIS)

    Choi-Yim, H.; Johnson, W.L.

    1997-01-01

    Composites with a bulk metallic glass matrix were synthesized and characterized. This was made possible by the recent development of bulk metallic glasses that exhibit high resistance to crystallization in the undercooled liquid state. In this letter, experimental methods for processing metallic glass composites are introduced. Three different bulk metallic glass forming alloys were used as the matrix materials. Both ceramics and metals were introduced as reinforcement into the metallic glass. The metallic glass matrix remained amorphous after adding up to a 30 vol% fraction of particles or short wires. X-ray diffraction patterns of the composites show only peaks from the second phase particles superimposed on the broad diffuse maxima from the amorphous phase. Optical micrographs reveal uniformly distributed particles in the matrix. The glass transition of the amorphous matrix and the crystallization behavior of the composites were studied by calorimetric methods. copyright 1997 American Institute of Physics

  3. Bulk viscosity and cosmological evolution

    International Nuclear Information System (INIS)

    Beesham, A.

    1996-01-01

    In a recent interesting paper, Pimentel and Diaz-Rivera (Nuovo Cimento B, 109(1994) 1317) have derived several solutions with bulk viscosity in homogeneous and isotropic cosmological models. They also discussed the properties of these solutions. In this paper the authors relate the solutions of Pimentel and Diaz-Rivera by simple transformations to previous solutions published in the literature, showing that all the solutions can be derived from the known existing ones. Drawbacks to these approaches of studying bulk viscosity are pointed out, and better approaches indicated

  4. Study of CdTe quantum dots grown using a two-step annealing method

    Science.gov (United States)

    Sharma, Kriti; Pandey, Praveen K.; Nagpal, Swati; Bhatnagar, P. K.; Mathur, P. C.

    2006-02-01

    High size dispersion, large average radius of quantum dot and low-volume ratio has been a major hurdle in the development of quantum dot based devices. In the present paper, we have grown CdTe quantum dots in a borosilicate glass matrix using a two-step annealing method. Results of optical characterization and the theoretical model of absorption spectra have shown that quantum dots grown using two-step annealing have lower average radius, lesser size dispersion, higher volume ratio and higher decrease in bulk free energy as compared to quantum dots grown conventionally.

  5. Characterization of Si(100) homoepitaxy grown in the STM at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Grube, H. (Holger); Brown, G. W. (Geoffrey W.); Pomeroy, J. M. (Joshua M.); Hawley, M. E. (Marilyn E.)

    2002-01-01

    We explore the growth of low-temperature bulk-like Si(100) homoepitaxy with regard to microscopic surface roughness and defects We characterize films grown at different temperatures up to 500K in-situ by means of an effusion cell added to our UHVSTM. The development of novel architectures for future generation computers calls for high-quality homoepitaxial (WOO) grown at low temperature. Even though Si(100) can be grown crystalline up to a limited thickness: the microstructure reveals significant small-scale surface roughness and defects specific to low-temperature growth. Both can he detrimental to fabrication and operation of small-scale electronic devices.

  6. Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells

    International Nuclear Information System (INIS)

    Arafune, K.; Sasaki, T.; Wakabayashi, F.; Terada, Y.; Ohshita, Y.; Yamaguchi, M.

    2006-01-01

    We focused on the defects and impurities in polycrystalline silicon substrates, which deteriorate solar cell efficiency. Comparison of the minority carrier lifetime with the grain size showed that the region with short minority carrier lifetimes did not correspond to the region with small grains. Conversely, the minority carrier lifetime decreased as the etch-pit density (EPD) increased, suggesting that the minority carrier lifetime is strongly affected by the EPD. Electron beam induced current measurements revealed that a combination of grain boundaries and point defects had high recombination activity. Regarding impurities, the interstitial oxygen concentration was relatively low compared with that in a Czochralski-grown silicon substrate, the total carbon concentration exceeded the solubility limit of silicon melt. X-ray microprobe fluorescence measurements revealed a large amount of iron in the regions where there were many etch-pits and grain boundaries with etch-pits. X-ray absorption near edge spectrum analysis revealed trapped iron in the form of oxidized iron

  7. Numerical analysis of continuous charge of lithium niobate in a double-crucible Czochralski system using the accelerated crucible rotation technique

    Science.gov (United States)

    Kitashima, Tomonori; Liu, Lijun; Kitamura, Kenji; Kakimoto, Koichi

    2004-05-01

    The transport mechanism of supplied raw material in a double-crucible Czochralski system using the accelerated crucible rotation technique (ACRT) was investigated by three-dimensional and time-dependent numerical simulation. The calculation clarified that use of the ACRT resulted in enhancement of the mixing effect of the supplied raw material. It is, therefore, possible to maintain the composition of the melt in an inner crucible during crystal growth by using the ACRT. The effect of the continuous charge of the raw material on melt temperature was also investigated. Our results showed that the effect of feeding lithium niobate granules on melt temperature was small, since the feeding rate of the granules is small. Therefore, solidification of the melt surface due to the heat of fusion in this system is not likely.

  8. Numerical analysis of transport phenomena in Y-Ba-Cu-O melt during growth of superconducting crystal Y123 by Czochralski method

    Science.gov (United States)

    Szmyd, J. S.; Suzuki, K.

    2003-10-01

    In 1993, at the Superconductivity Research Laboratory (SRL), International Superconductivity Technology Centre (ISTEC), in Tokyo, continuous growth of large single crystals of YBa 2Cu 3O 7- x (Y123) was achieved by the application of a modified Czochralski method. This paper presents the numerical computations of the flow, thermal and Y concentration fields in the Ba-Cu-O melt for Y123 single crystal growth by this modified method. The finite volume method was used to calculate the fluid flow, heat transfer and yttrium distribution in the melt with staggered numerical grid. The flow in the melt was modelled as an incompressible Newtonian and Boussinesque fluid. Calculations are presented for a combined flow regime of buoyancy-driven natural convection and crystal-rotation-driven forced convection.

  9. GREENHOUSE-GROWN CAPE GOOSEBERRY

    African Journals Online (AJOL)

    /2006 S 4,00. Printed in Uganda. All rights reserved O2006, African Crop Science Society. SHORT COMMINICATION. EFFECT OF GIBBERRELLIC ACID ON GROWTH AND FRUIT YIELD OF. GREENHOUSE-GROWN CAPE GOOSEBERRY.

  10. Zirconium based bulk metallic glasses

    International Nuclear Information System (INIS)

    Dey, G.K.; Neogy, S.; Savalia, R.T.; Tewari, R.; Srivastava, D.; Banerjee, S.

    2006-01-01

    Metallic glasses have come into prominence in recent times because their nanocrystalline atomic arrangement imparts many useful and unusual properties to these metallic solids. In this study, bulk glasses have been obtained in Zr based multicomponent alloy by induction melting these alloys in silica crucibles and casting these in form of rods 3 and 6 mm in diameter in a copper mould

  11. Longitudinal bulk acoustic mass sensor

    DEFF Research Database (Denmark)

    Hales, Jan Harry; Teva, Jordi; Boisen, Anja

    2009-01-01

    A polycrystalline silicon longitudinal bulk acoustic cantilever is fabricated and operated in air at 51 MHz. A mass sensitivity of 100 Hz/fg (1 fg=10(-15) g) is obtained from the preliminary experiments where a minute mass is deposited on the device by means of focused ion beam. The total noise...

  12. Bulk viscosity of molecular fluids

    Science.gov (United States)

    Jaeger, Frederike; Matar, Omar K.; Müller, Erich A.

    2018-05-01

    The bulk viscosity of molecular models of gases and liquids is determined by molecular simulations as a combination of a dilute gas contribution, arising due to the relaxation of internal degrees of freedom, and a configurational contribution, due to the presence of intermolecular interactions. The dilute gas contribution is evaluated using experimental data for the relaxation times of vibrational and rotational degrees of freedom. The configurational part is calculated using Green-Kubo relations for the fluctuations of the pressure tensor obtained from equilibrium microcanonical molecular dynamics simulations. As a benchmark, the Lennard-Jones fluid is studied. Both atomistic and coarse-grained force fields for water, CO2, and n-decane are considered and tested for their accuracy, and where possible, compared to experimental data. The dilute gas contribution to the bulk viscosity is seen to be significant only in the cases when intramolecular relaxation times are in the μs range, and for low vibrational wave numbers (<1000 cm-1); This explains the abnormally high values of bulk viscosity reported for CO2. In all other cases studied, the dilute gas contribution is negligible and the configurational contribution dominates the overall behavior. In particular, the configurational term is responsible for the enhancement of the bulk viscosity near the critical point.

  13. Creep properties of a thermally grown alumina

    Energy Technology Data Exchange (ETDEWEB)

    Kang, K.J. [Department of Mechanical Engineering, Chonnam National University, Kwangju 500-757 (Korea, Republic of)], E-mail: kjkang@chonnam.ac.kr; Mercer, C. [Materials Department, University of California, Santa Barbara, CA 93106-5050 (United States)

    2008-04-15

    A unique test system has been developed to measure creep properties of actual thermally grown oxides (TGO) formed on a metal foil. The thickness of TGO, load and displacement can be monitored in situ at high temperature. Two batches of FeCrAlY alloys which differ from each other in contents of yttrium and titanium were selected as the {alpha}-Al{sub 2}O{sub 3} TGO forming materials. The creep tests were performed on {alpha}-Al{sub 2}O{sub 3} of thickness 1-4 {mu}m, thermally grown at 1200 deg. C in air. The strength of the substrate was found to be negligible, provided that the TGO and substrate thickness satisfy: h{sub TGO} > 1 {mu}m and H{sub sub} {<=} 400 {mu}m. The steady-state creep results for all four TGO thicknesses obtained on batch I reside within a narrow range, characterized by a parabolic creep relation. It is nevertheless clear that the steady-state creep rates vary with TGO thickness: decreasing as the thickness increases. For batch II, the steady-state creep rates are higher and now influenced more significantly by TGO thickness. In comparison with previous results of the creep properties for bulk polycrystalline {alpha}-Al{sub 2}O{sub 3} at a grain size of {approx}2 {mu}m, the creep rates for the TGO were apparently higher, but both were significantly affected by yttrium content. The higher creep rate and dependency on the TGO thickness led to a hypothesis that the deformation of the TGO under tensile stress at high temperature was not a result of typical creep mechanisms such as diffusion of vacancies or intra-granular motion of dislocations, but a result of inter-grain growth of TGO. Results also indicate that the amount of yttrium may influence the growth strain as well as the creep rate.

  14. Influence of grain boundary connectivity on the trapped magnetic flux of multi-seeded bulk superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Z., E-mail: zgdeng@gmail.com [Laboratory of Applied Physics, Department of Marine Electronics and Mechanical Engineering, Tokyo University of Marine Science and Technology, Tokyo 135-8533 (Japan); Miki, M.; Felder, B.; Tsuzuki, K.; Shinohara, N.; Hara, S.; Uetake, T.; Izumi, M. [Laboratory of Applied Physics, Department of Marine Electronics and Mechanical Engineering, Tokyo University of Marine Science and Technology, Tokyo 135-8533 (Japan)

    2011-09-15

    Four different performance multi-seeded YBCO bulks as representatives. A coupling ratio to reflect the coupling quality of GBs inside multi-seeded bulks. An averaged trapped magnetic flux density parameter was introduced. The top-seeded melt-growth process with multi-seeding technique provides a promising way to fabricate large-sized bulk superconductors in an economical way. To understand the essential characteristics of the multi-seeded bulks, the paper reports the influence of the grain boundary (GB) coupling or connectivity on the total trapped magnetic flux. The coupling ratio, the lowest trapped flux density in the GB area to the averaged top value of the two neighboring peak trapped fields, is introduced to reflect the coupling quality of GBs inside a multi-seeded bulk. By the trapped flux density measurement of four different performance multi-seeded YBCO bulk samples as representatives, it was found that the GB coupling plays an important role for the improvement of the total trapped magnetic flux; moreover, somewhat more significant than the widely used parameter of the peak trapped fields to evaluate the physical performance of bulk samples. This characteristic is different with the case of the well-grown single-grain bulks.

  15. Coulombic Fluids Bulk and Interfaces

    CERN Document Server

    Freyland, Werner

    2011-01-01

    Ionic liquids have attracted considerable interest in recent years. In this book the bulk and interfacial physico-chemical characteristics of various fluid systems dominated by Coulomb interactions are treated which includes molten salts, ionic liquids as well as metal-molten salt mixtures and expanded fluid metals. Of particular interest is the comparison of the different systems. Topics in the bulk phase concern the microscopic structure, the phase behaviour and critical phenomena, and the metal-nonmetal transition. Interfacial phenomena include wetting transitions, electrowetting, surface freezing, and the electrified ionic liquid/ electrode interface. With regard to the latter 2D and 3D electrochemical phase formation of metals and semi-conductors on the nanometer scale is described for a number of selected examples. The basic concepts and various experimental methods are introduced making the book suitable for both graduate students and researchers interested in Coulombic fluids.

  16. Bulk Superconductors in Mobile Application

    Science.gov (United States)

    Werfel, F. N.; Delor, U. Floegel-; Rothfeld, R.; Riedel, T.; Wippich, D.; Goebel, B.; Schirrmeister, P.

    We investigate and review concepts of multi - seeded REBCO bulk superconductors in mobile application. ATZ's compact HTS bulk magnets can trap routinely 1 T@77 K. Except of magnetization, flux creep and hysteresis, industrial - like properties as compactness, power density, and robustness are of major device interest if mobility and light-weight construction is in focus. For mobile application in levitated trains or demonstrator magnets we examine the performance of on-board cryogenics either by LN2 or cryo-cooler application. The mechanical, electric and thermodynamical requirements of compact vacuum cryostats for Maglev train operation were studied systematically. More than 30 units are manufactured and tested. The attractive load to weight ratio is more than 10 and favours group module device constructions up to 5 t load on permanent magnet (PM) track. A transportable and compact YBCO bulk magnet cooled with in-situ 4 Watt Stirling cryo-cooler for 50 - 80 K operation is investigated. Low cooling power and effective HTS cold mass drives the system construction to a minimum - thermal loss and light-weight design.

  17. Diffusion length measurements in bulk and epitaxially grown 3-5 semiconductors using charge collection microscopy

    Science.gov (United States)

    Leon, R. P.

    1987-01-01

    Diffusion lengths and surface recombination velocities were measured in GaAs diodes and InP finished solar cells. The basic techniques used was charge collection microscopy also known as electron beam induced current (EBIC). The normalized currents and distances from the pn junction were read directly from the calibrated curves obtained while using the line scan mode in an SEM. These values were then equated to integral and infinite series expressions resulting from the solution of the diffusion equation with both extended generation and point generation functions. This expands previous work by examining both thin and thick samples. The surface recombination velocity was either treated as an unknown in a system of two equations, or measured directly using low e(-) beam accelerating voltages. These techniques give accurate results by accounting for the effects of surface recombination and the finite size of the generation volume.

  18. Ordered bulk degradation via autophagy

    DEFF Research Database (Denmark)

    Dengjel, Jörn; Kristensen, Anders Riis; Andersen, Jens S

    2008-01-01

    During amino acid starvation, cells undergo macroautophagy which is regarded as an unspecific bulk degradation process. Lately, more and more organelle-specific autophagy subtypes such as reticulophagy, mitophagy and ribophagy have been described and it could be shown, depending on the experimental...... at proteasomal and lysosomal degradation ample cross-talk between the two degradation pathways became evident. Degradation via autophagy appeared to be ordered and regulated at the protein complex/organelle level. This raises several important questions such as: can macroautophagy itself be specific and what...

  19. Investigations on growth morphology, bulk growth and crystalline perfection of L-threonine, an organic nonlinear optical material

    International Nuclear Information System (INIS)

    Linet, J. Mary; Das, S. Jerome

    2010-01-01

    L-threonine single crystal was successfully grown from aqueous solution. The morphology of the grown crystal was compared with the predicted morphology using Bravais-Friedel-Donnay-Harker law and was found to be in good agreement with the predicted morphology. Good optical quality bulk single crystal of enhanced size has been grown using unidirectional crystal growth method. High-resolution X-ray analysis study resulted in a rocking curve with a full width half maximum of 20 arc sec exhibiting the good crystalline quality of the grown crystal. The optical transmission study shows 90% of transmission in the entire visible region that exhibits the good optical quality of the grown crystal. The mechanical properties were analyzed by Vicker's microhardness method.

  20. Microhardness of bulk-fill composite materials

    OpenAIRE

    Kelić, Katarina; Matić, Sanja; Marović, Danijela; Klarić, Eva; Tarle, Zrinka

    2016-01-01

    The aim of the study was to determine microhardness of high- and low-viscosity bulk-fill composite resins and compare it with conventional composite materials. Four materials of high-viscosity were tested, including three bulk-fills: QuiXfi l (QF), x-tra fil (XTF) and Tetric EvoCeram Bulk Fill (TEBCF), while nanohybrid composite GrandioSO (GSO) served as control. The other four were low-viscosity composites, three bulk-fill materials: Smart Dentin Replacement (SDR), Venus Bulk Fill (VBF) and ...

  1. Handling of bulk solids theory and practice

    CERN Document Server

    Shamlou, P A

    1990-01-01

    Handling of Bulk Solids provides a comprehensive discussion of the field of solids flow and handling in the process industries. Presentation of the subject follows classical lines of separate discussions for each topic, so each chapter is self-contained and can be read on its own. Topics discussed include bulk solids flow and handling properties; pressure profiles in bulk solids storage vessels; the design of storage silos for reliable discharge of bulk materials; gravity flow of particulate materials from storage vessels; pneumatic transportation of bulk solids; and the hazards of solid-mater

  2. Numerical simulation of the oxygen concentration distribution in silicon melt for different crystal lengths during Czochralski growth with a transverse magnetic field

    Science.gov (United States)

    Chen, Jyh-Chen; Chiang, Pei-Yi; Nguyen, Thi Hoai Thu; Hu, Chieh; Chen, Chun-Hung; Liu, Chien-Cheng

    2016-10-01

    A three-dimensional simulation model is used to study the oxygen concentration distribution in silicon crystal during the Czochralski growth process under a transverse uniform magnetic field. The flow, temperature, and oxygen concentration distributions inside the furnace are calculated for different crystal lengths. There is significant variation in the flow structure in the melt with the growth length. The results show that in the initial stages, there is a decrease in the oxygen concentration at the crystal-melt interface as the length of the growing crystal increases. As the crystal lengthens further, a minimum value is reached after which the oxygen concentration increases continuously. This trend is consistent with that shown in the experimental results. The variation of the oxygen concentration with the growth length is strongly related to the depth of the melt in the crucible and the flow structure inside the melt. Better uniformity of the axial oxygen concentration can be achieved by proper adjustment of the crucible rotation rate during the growth process.

  3. Continuous Czochralski growth: Silicon sheet growth development of the large area silicon sheet task of the Low Cost Silicon Solar Array project

    Science.gov (United States)

    1978-01-01

    The primary objective of this contract is to develop equipment and methods for the economic production of single crystal ingot material by the continuous Czochralski (CZ) process. Continuous CZ is defined for the purpose of this work as the growth of at least 100 kilograms of ingot from only one melt container. During the reporting period (October, 1977 - September, 1978), a modified grower was made fully functional and several recharge runs were performed. The largest run lasted 44 hours and over 42 kg of ingot was produced. Little, if any, degradation in efficiency was observed as a result of pulling multiple crystals from one crucible. Solar efficiencies observed were between 9.3 and 10.4% AMO (13.0 and 14.6% AMI) compared to 10.5% (14.7% AMI) for optimum CZ material control samples. Using the SAMICS/IPEG format, economic analysis of continuous CZ suggests that 1986 DoE cost goals can only be met by the growth of large diameter, large mass crystals.

  4. Numerical study on the effect of temperature oscillations on the crystallization front shape during Czochralski growth of gadolinium gallium garnet crystal

    Science.gov (United States)

    Faiez, Reza; Rezaei, Yazdan

    2017-10-01

    Time-dependent, finite volume method calculations of momentum and heat transfer were carried out to investigate the correlation between oscillatory convection and the crystallization front dynamics during the Czochralski (Cz) growth of an oxide material. The present modeling allows us to illustrate the modification of the interface shape during the time period of oscillation of the flow manifesting as the formation of a cold plume beneath the phase boundary. It was shown that the instability mechanism is associated with an irreversible dramatic change in the interface shape, which occurs at a critical Reynolds number significantly lower than that is predicted by the quasi-stationary global model analysis of the Cz growth system. The baroclinic term which appears in the vorticity equation in a rotating stratified fluid is used to describe the numerical results of the model. The properties of the thermal waves were studied in the monitoring points located nearby the interface. The waves are regular but not in fact vertically correlated as observed in the case of baroclinic waves. The Rayleigh-Benard dynamics is suggested to be the predominant mechanism even though the instability is primarily baroclinic.

  5. Development of advanced Czochralski Growth Process to produce low cost 150 KG silicon ingots from a single crucible for technology readiness

    Science.gov (United States)

    1981-01-01

    The goals in this program for advanced czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness are outlined. To provide a modified CG2000 crystal power capable of pulling a minimum of five crystals, each of approximately 30 kg in weight, 150 mm diameter from a single crucible with periodic melt replenishment. Crystals to have: resistivity of 1 to 3 ohm cm, p-type; dislocation density below 1- to the 6th power per cm; orientation (100); after growth yield of greater than 90%. Growth throughput of greater than 2.5 kg per hour of machine operation using a radiation shield. Prototype equipment suitable for use as a production facility. The overall cost goal is $.70 per peak watt by 1986. To accomplish these goals, the modified CG2000 grower and development program includes: (1) increased automation with a microprocessor based control system; (2) sensors development which will increase the capability of the automatic controls system, and provide technology transfer of the developed systems.

  6. Improvements of uniformity and stoichiometry for zone-leveling Czochralski growth of MgO-doped LiNbO3 crystals

    International Nuclear Information System (INIS)

    Tsai, C.B.; Hsu, W.T.; Shih, M.D.; Tai, C.Y.; Hsieh, C.K.; Hsu, W.C.; Hsu, R.T.; Lan, C.W.

    2006-01-01

    The zone-leveling Czochralski (ZLCz) technique is a continuous feeding process and can be used for the growth of near-stoichiometric lithium niobate (SLN) single crystals. However, the finite crucible length can cause the variation of the zone length and thus the composition and stoichiometry, especially in the growth of a large diameter crystal. To solve the problems, several approaches were proposed for the growth of 4 cm-diameter 1 mol% MgO-doped SLN. The modification of the hot zone to minimize the zone variation was found useful for the uniformity, but the stoichiometry was inadequate even with the zone composition up to 60 mol% Li 2 O. A Li-excess feed was further used and a good Li/Nb ratio was obtained. Adding K 2 O (16 mol%) into the solution zone was useful as well, but it was inferior to using the Li-excess feed. In addition, a much lower growth rate was needed for getting an inclusion-free crystal

  7. Impact of interstitial iron on the study of meta-stable B-O defects in Czochralski silicon: Further evidence of a single defect

    Science.gov (United States)

    Kim, Moonyong; Chen, Daniel; Abbott, Malcolm; Nampalli, Nitin; Wenham, Stuart; Stefani, Bruno; Hallam, Brett

    2018-04-01

    We explore the influence of interstitial iron (Fei) on lifetime spectroscopy of boron-oxygen (B-O) related degradation in p-type Czochralski silicon. Theoretical and experimental evidence presented in this study indicate that iron-boron pair (Fe-B) related reactions could have influenced several key experimental results used to derive theories on the fundamental properties of the B-O defect. Firstly, the presence of Fei can account for higher apparent capture cross-section ratios (k) of approximately 100 observed in previous studies during early stages of B-O related degradation. Secondly, the association of Fe-B pairs can explain the initial stage of a two-stage recovery of carrier lifetime with dark annealing after partial degradation. Thirdly, Fei can result in high apparent k values after the permanent deactivation of B-O defects. Subsequently, we show that a single k value can describe the recombination properties associated with B-O defects throughout degradation, that the recovery during dark annealing occurs with a single-stage, and both the fast- and slow-stage B-O related degradation can be permanently deactivated during illuminated annealing. Accounting for the recombination activity of Fei provides further evidence that the B-O defect is a single defect, rather than two separate defects normally attributed to fast-forming recombination centers and slow-forming recombination centers. Implications of this finding for the nature of the B-O defect are also discussed.

  8. Effect of Rapid Thermal Processing on Light-Induced Degradation of Carrier Lifetime in Czochralski p-Type Silicon Bare Wafers

    Science.gov (United States)

    Kouhlane, Y.; Bouhafs, D.; Khelifati, N.; Belhousse, S.; Menari, H.; Guenda, A.; Khelfane, A.

    2016-11-01

    The electrical properties of Czochralski silicon (Cz-Si) p-type boron-doped bare wafers have been investigated after rapid thermal processing (RTP) with different peak temperatures. Treated wafers were exposed to light for various illumination times, and the effective carrier lifetime ( τ eff) measured using the quasi-steady-state photoconductance (QSSPC) technique. τ eff values dropped after prolonged illumination exposure due to light-induced degradation (LID) related to electrical activation of boron-oxygen (BO) complexes, except in the sample treated with peak temperature of 785°C, for which the τ eff degradation was less pronounced. Also, a reduction was observed when using the 830°C peak temperature, an effect that was enhanced by alteration of the wafer morphology (roughness). Furthermore, the electrical resistivity presented good stability under light exposure as a function of temperature compared with reference wafers. Additionally, the optical absorption edge shifted to higher wavelength, leading to increased free-carrier absorption by treated wafers. Moreover, a theoretical model is used to understand the lifetime degradation and regeneration behavior as a function of illumination time. We conclude that RTP plays an important role in carrier lifetime regeneration for Cz-Si wafers via modification of optoelectronic and structural properties. The balance between an optimized RTP cycle and the rest of the solar cell elaboration process can overcome the negative effect of LID and contribute to achievement of higher solar cell efficiency and module performance.

  9. Bulk handling benefits from ICT

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2007-11-15

    The efficiency and accuracy of bulk handling is being improved by the range of management information systems and services available today. As part of the program to extend Richards Bay Coal Terminal, Siemens is installing a manufacturing execution system which coordinates and monitors all movements of raw materials. The article also reports recent developments by AXSMarine, SunGuard Energy, Fuelworx and Railworx in providing integrated tools for tracking, managing and optimising solid/liquid fuels and rail car maintenance activities. QMASTOR Ltd. has secured a contract with Anglo Coal Australia to provide its Pit to Port.net{reg_sign} and iFuse{reg_sign} software systems across all their Australians sites, to include pit-to-product stockpile management. 2 figs.

  10. Bulk analysis using nuclear techniques

    International Nuclear Information System (INIS)

    Borsaru, M.; Holmes, R.J.; Mathew, P.J.

    1983-01-01

    Bulk analysis techniques developed for the mining industry are reviewed. Using penetrating neutron and #betta#-radiations, measurements are obtained directly from a large volume of sample (3-30 kg) #betta#-techniques were used to determine the grade of iron ore and to detect shale on conveyor belts. Thermal neutron irradiation was developed for the simultaneous determination of iron and aluminium in iron ore on a conveyor belt. Thermal-neutron activation analysis includes the determination of alumina in bauxite, and manganese and alumina in manganese ore. Fast neutron activation analysis is used to determine silicon in iron ores, and alumina and silica in bauxite. Fast and thermal neutron activation has been used to determine the soil in shredded sugar cane. (U.K.)

  11. Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

    Science.gov (United States)

    Ngabonziza, P.; Wang, Y.; Brinkman, A.

    2018-04-01

    An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi2Te3 topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi2Te3 thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two dimensional in nature.

  12. Optical and scintillation properties of bulk ZnO crystal

    Energy Technology Data Exchange (ETDEWEB)

    Yanagida, Takayuki [Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196 (Japan); Fujimoto, Yutaka; Kurosawa, Shunsuke [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yamanoi, Kohei; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871 (Japan); Kano, Masataka; Wakamiya, Akira [Daishinku Corporation, 1389 Shinzaike, Hiraoka-cho, Kakogawa, Hyogo 675-0194 (Japan)

    2012-12-15

    Single crystal bulk ZnO scintillator grown by the hydrothermal method was tested on its scintillation performances. In X-ray induced radio luminescence spectrum, it exhibited two intense emission peaks at 400 and 550 nm. The former was ascribed to the free and bound exciton related luminescence and the latter to oxygen vacancy related one, respectively. X-ray induced scintillation decay time of the exciton related emission measured by the pulse X-ray streak camera system resulted {proportional_to} 4 ns. Finally, the light yield under {sup 241}Am 5.5 MeV {alpha}-ray was examined and it resulted {proportional_to} 500 ph/5.5 MeV-{alpha}.(copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Annihilation characteristics in as-grown and electron irradiated Zn II-VI semiconductors

    International Nuclear Information System (INIS)

    Moser, P.; La Cruz, R.M. de; Pareja, R.

    1991-01-01

    The temperature dependence of the positron lifetime has been investigated in as-grown crystals of Zns, ZnSe and ZnTe over the temperature range 8-320 K. Also, isochronal annealing experiments up to 1175 K have been performed on these crystals. Zns and ZnSe crystals have been electron irradiated at room temperature and at 77 K. From the results in as-grown and annealed crystals, the values of (230±3), (240±5) and (266±3) ps are attributed to the positron lifetime in the bulk of Zns, ZnSe and ZnTe, respectively. 8 refs., 3 figs

  14. Annihilation characteristics in As-grown and electron irradiated Zn II-VI semiconductors

    International Nuclear Information System (INIS)

    Cruz, R.M. de la; Pareja, R.; Moser, P.

    1992-01-01

    The temperature dependence of the positron lifetime has been investigated in as-grown crystals of ZnS, ZnSe and ZnTe over the temperature range 8-320 K. Also, isochronal annealing experiments up to 1175 K have been performed on these crystals. ZnS and ZnSe crystals have been electron irradiated at room temperature and at 77 K. From the results in as-grown and annealed crystals, the values of (230±3), (240±5) and (266±3) ps are attributed to the positron lifetime in the bulk of ZnS, ZnSe and ZnTe, respectively

  15. Skin cancer full-grown from scar

    International Nuclear Information System (INIS)

    Zikiryakhodjaev, D.Z.; Sanginov, D.R.

    2001-01-01

    In this chapter authors investigate the peculiarities of skin cancer full-grown from scar, the theory of it's descent, quote some statistical data on skin cancer full-grown from scar and variety clinical forms of skin cancer full-grown from scar was shown, quote some methods of treatment

  16. Coupling brane fields to bulk supergravity

    Energy Technology Data Exchange (ETDEWEB)

    Parameswaran, Susha L. [Uppsala Univ. (Sweden). Theoretical Physics; Schmidt, Jonas [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany)

    2010-12-15

    In this note we present a simple, general prescription for coupling brane localized fields to bulk supergravity. We illustrate the procedure by considering 6D N=2 bulk supergravity on a 2D orbifold, with brane fields localized at the fixed points. The resulting action enjoys the full 6D N=2 symmetries in the bulk, and those of 4D N=1 supergravity at the brane positions. (orig.)

  17. Influence of grain boundary connectivity on the trapped magnetic flux of multi-seeded bulk superconductors

    Science.gov (United States)

    Deng, Z.; Miki, M.; Felder, B.; Tsuzuki, K.; Shinohara, N.; Hara, S.; Uetake, T.; Izumi, M.

    2011-09-01

    The top-seeded melt-growth process with multi-seeding technique provides a promising way to fabricate large-sized bulk superconductors in an economical way. To understand the essential characteristics of the multi-seeded bulks, the paper reports the influence of the grain boundary (GB) coupling or connectivity on the total trapped magnetic flux. The coupling ratio, the lowest trapped flux density in the GB area to the averaged top value of the two neighboring peak trapped fields, is introduced to reflect the coupling quality of GBs inside a multi-seeded bulk. By the trapped flux density measurement of four different performance multi-seeded YBCO bulk samples as representatives, it was found that the GB coupling plays an important role for the improvement of the total trapped magnetic flux; moreover, somewhat more significant than the widely used parameter of the peak trapped fields to evaluate the physical performance of bulk samples. This characteristic is different with the case of the well-grown single-grain bulks.

  18. Longitudinal and bulk viscosities of expanded rubidium

    International Nuclear Information System (INIS)

    Zaheri, Ali Hossein Mohammad; Srivastava, Sunita; Tankeshwar, K

    2003-01-01

    First three non-vanishing sum rules for the bulk and longitudinal stress auto-correlation functions have been evaluated for liquid Rb at six thermodynamic states along the liquid-vapour coexistence curve. The Mori memory function formalism and the frequency sum rules have been used to calculate bulk and longitudinal viscosities. The results thus obtained for the ratio of bulk viscosity to shear viscosity have been compared with experimental and other theoretical predictions wherever available. The values of the bulk viscosity have been found to be more than the corresponding values of the shear viscosity for all six thermodynamic states investigated here

  19. Nanopatterned Bulk Metallic Glass Biosensors.

    Science.gov (United States)

    Kinser, Emily R; Padmanabhan, Jagannath; Yu, Roy; Corona, Sydney L; Li, Jinyang; Vaddiraju, Sagar; Legassey, Allen; Loye, Ayomiposi; Balestrini, Jenna; Solly, Dawson A; Schroers, Jan; Taylor, André D; Papadimitrakopoulos, Fotios; Herzog, Raimund I; Kyriakides, Themis R

    2017-12-22

    Nanopatterning as a surface area enhancement method has the potential to increase signal and sensitivity of biosensors. Platinum-based bulk metallic glass (Pt-BMG) is a biocompatible material with electrical properties conducive for biosensor electrode applications, which can be processed in air at comparably low temperatures to produce nonrandom topography at the nanoscale. Work presented here employs nanopatterned Pt-BMG electrodes functionalized with glucose oxidase enzyme to explore the impact of nonrandom and highly reproducible nanoscale surface area enhancement on glucose biosensor performance. Electrochemical measurements including cyclic voltammetry (CV) and amperometric voltammetry (AV) were completed to compare the performance of 200 nm Pt-BMG electrodes vs Flat Pt-BMG control electrodes. Glucose dosing response was studied in a range of 2 mM to 10 mM. Effective current density dynamic range for the 200 nm Pt-BMG was 10-12 times greater than that of the Flat BMG control. Nanopatterned electrode sensitivity was measured to be 3.28 μA/cm 2 /mM, which was also an order of magnitude greater than the flat electrode. These results suggest that nonrandom nanotopography is a scalable and customizable engineering tool which can be integrated with Pt-BMGs to produce biocompatible biosensors with enhanced signal and sensitivity.

  20. Aspects of silicon bulk lifetimes

    Science.gov (United States)

    Landsberg, P. T.

    1985-01-01

    The best lifetimes attained for bulk crytalline silicon as a function of doping concentrations are analyzed. It is assumed that the dopants which set the Fermi level do not contribute to the recombination traffic which is due to the unknown defect. This defect is assumed to have two charge states: neutral and negative, the neutral defect concentration is frozen-in at some temperature T sub f. The higher doping concentrations should include the band-band Auger effect by using a generalization of the Shockley-Read-Hall (SRH) mechanism. The generalization of the SRH mechanism is discussed. This formulation gives a straightforward procedure for incorporating both band-band and band-trap Auger effects in the SRH procedure. Two related questions arise in this context: (1) it may sometimes be useful to write the steady-state occupation probability of the traps implied by SRH procedure in a form which approximates to the Fermi-Dirac distribution; and (2) the effect on the SRH mechanism of spreading N sub t levels at one energy uniformly over a range of energies is discussed.

  1. Linear magnetoresistance and surface to bulk coupling in topological insulator thin films.

    Science.gov (United States)

    Singh, Sourabh; Gopal, R K; Sarkar, Jit; Pandey, Atul; Patel, Bhavesh G; Mitra, Chiranjib

    2017-12-20

    We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi 2 Se 2 Te and BiSbTeSe 1.6 were grown using the pulsed laser deposition technique and subjected to transport measurements. Magnetotransport measurements indicate a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values. We present a careful analysis to explain the origin of LMR taking into consideration all the existing models of LMR. Here we consider that the bulk insulating states and the metallic surface states constitute two parallel conduction channels. Invoking this, we were able to explain linear magnetoresistance behavior as a competition between these parallel channels. We observe that the cross-over field, where LMR sets in, decreases with increasing temperature. We propose that this cross-over field can be used phenomenologically to estimate the strength of surface to bulk coupling.

  2. Quality evaluation of resistivity-controlled silicon crystals

    Science.gov (United States)

    Wang, Jong Hoe

    2006-01-01

    The segregation phenomenon of dopants causes a low production yield of silicon crystal that meets the resistivity tolerance required by device manufacturers. In order to control the macroscopic axial resistivity distribution in bulk crystal growth, numerous studies including continuous Czochralski method and double crucible technique have been studied. The simple B-P codoping method for improving the productivity of p-type silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. In this work, the quality of Czochralski-grown silicon single crystals with a diameter 200 mm using B-P codoping method was studied from the chemical and structural points of view. It was found that the characteristics of B-P codoped wafers including the oxygen precipitation behavior and the grown-in defects are same as that of conventional B-doped Czochralski crystals.

  3. Temperature dependence of luminescence characteristics of Lu.sub.2(1-x)./sub.Y.sub.2x./sub.SiO.sub.5./sub.: Ce.sup.3+./sup. scintillator grown by the Czochralski method

    Czech Academy of Sciences Publication Activity Database

    Feng, H.; Jarý, Vítězslav; Mihóková, Eva; Ding, D.; Nikl, Martin; Ren, G.; Li, H.; Pan, S.; Beitlerová, Alena; Kučerková, Romana

    2010-01-01

    Roč. 108, č. 3 (2010), 033519/1-033519/6 ISSN 0021-8979 R&D Projects: GA MŠk(CZ) ME10084 Institutional research plan: CEZ:AV0Z10100521 Keywords : temperature dependence * luminescence * scintillator Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.064, year: 2010

  4. Crystal Growth and Characterization of MT2Si2 Ternary Intermetallics (M = U, RE and T = 3d, 4d, 5d Transition Metals)

    NARCIS (Netherlands)

    Menovsky, A.A.; Moleman, A.C.; Snel, G.E.; Gortenmulder, T.J.; Palstra, T.T.M.

    1986-01-01

    Bulk single crystals of the ternary intermetallic compounds UT2Si2 (T = Ni, Pd, Pt and Ru), LaT2Si2 (T = Pd and Rh) and LuPd2Si2 have been grown from the melt with a modified “tri-arc” Czochralski method. The as-grown crystals were characterized by X-ray, microprobe and chemical analyses. The

  5. 27 CFR 20.191 - Bulk articles.

    Science.gov (United States)

    2010-04-01

    ... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Bulk articles. 20.191... Users of Specially Denatured Spirits Operations by Users § 20.191 Bulk articles. Users who convey articles in containers exceeding one gallon may provide the recipient with a photocopy of subpart G of this...

  6. On the bulk viscosity of relativistic matter

    International Nuclear Information System (INIS)

    Canuto, V.; Hsieh, S.-H.

    1978-01-01

    An expression for the bulk viscosity coefficient in terms of the trace of the hydrodynamic energy-stress tensor is derived from the Kubo formula. This, along with a field-theoretic model of an interacting system of scalar particles, suggests that at high temperatures the bulk viscosity tends to zero, contrary to the often quoted resuls of Iso, Mori and Namiki. (author)

  7. Bulk-viscosity-driven asymmetric inflationary universe

    International Nuclear Information System (INIS)

    Waga, I.; Lima, J.A.S.; Portugal, R.

    1987-01-01

    A primordial net bosinic charge is introduced in the context of the bulk-viscosity-driven inflationary models. The analysis is carried through a macroscopic point of view in the framework of the causal thermodynamic theory. The conditions for having exponetial and generalized inflation are obtained. A phenomenological expression for the bulk viscosity coefficient is also derived. (author) [pt

  8. Effects of irrigation strategies and soils on field grown potatoes

    DEFF Research Database (Denmark)

    Ahmadi, Seyed Hamid; Plauborg, Finn; Andersen, Mathias Neumann

    2011-01-01

    Root distribution of field grown potatoes (cv. Folva) was studied in 4.32m2 lysimeters and subjected to full (FI), deficit (DI), and partial root-zone drying (PRD) irrigation strategies. Drip irrigation was applied for all irrigations. Irrigations were run in three different soils: coarse sand......, loamy sand, and sandy loam. Irrigation treatments started after tuber bulking and lasted until final harvest with PRD and DI receiving 65% of FI. Potatoes irrigated with water-saving irrigation techniques (PRD and DI) did not show statistically different dry root mass and root length density (RLD, cm...... density in the furrow. Most roots accumulated in the surface layers of coarse sand as compared to the other soil types. In the deep soil profile (30–70 cm) a higher root density was found in loamy sand compared with the sandy loam and coarse sand. Approximately twice the amounts of roots were found below...

  9. Alkaline-doped manganese perovskite thin films grown by MOCVD

    International Nuclear Information System (INIS)

    Bibes, M.; Gorbenko, O.; Martinez, B.; Kaul, A.; Fontcuberta, J.

    2000-01-01

    We report on the preparation and characterization of La 1-x Na x MnO 3 thin films grown by MOCVD on various single-crystalline substrates. Under appropriate conditions epitaxial thin films have been obtained. The Curie temperatures of the films, which are very similar to those of bulk samples of similar composition, reflect the residual strain caused by the substrate. The anisotropic magnetoresistance AMR of the films has been analyzed in some detail, and it has been found that it has a two-fold symmetry at any temperature. Its temperature dependence mimics that of the electrical resistivity and magnetoresistance measured at similar fields, thus suggesting that the real structure of the material contributes to the measured AMR besides the intrinsic component

  10. Understanding the defect structure of solution grown zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Liew, Laura-Lynn [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Sankar, Gopinathan, E-mail: g.sankar@ucl.ac.uk [Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Handoko, Albertus D. [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Goh, Gregory K.L., E-mail: g-goh@imre.a-star.edu.sg [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Kohara, Shinji [Japan Synchrotron Radiation Research Institute (JASRI), Mikazuki, Sayo, Hyogo 679-5198 (Japan)

    2012-05-15

    Zinc oxide (ZnO) is a wide bandgap semiconducting oxide with many potential applications in various optoelectronic devices such as light emitting diodes (LEDs) and field effect transistors (FETs). Much effort has been made to understand the ZnO structure and its defects. However, one major issue in determining whether it is Zn or O deficiency that provides ZnO its unique properties remains. X-ray absorption spectroscopy (XAS) is an ideal, atom specific characterization technique that is able to probe defect structure in many materials, including ZnO. In this paper, comparative studies of bulk and aqueous solution grown ({<=}90 Degree-Sign C) ZnO powders using XAS and x-ray pair distribution function (XPDF) techniques are described. The XAS Zn-Zn correlation and XPDF results undoubtedly point out that the solution grown ZnO contains Zn deficiency, rather than the O deficiency that were commonly reported. This understanding of ZnO short range order and structure will be invaluable for further development of solid state lighting and other optoelectronic device applications. - Graphical abstract: Highlights: Black-Right-Pointing-Pointer ZnO powders have been synthesized through an aqueous solution method. Black-Right-Pointing-Pointer Defect structure studied using XAS and XPDF. Black-Right-Pointing-Pointer Zn-Zn correlations are less in the ZnO powders synthesized in solution than bulk. Black-Right-Pointing-Pointer Zn vacancies are present in the powders synthesized. Black-Right-Pointing-Pointer EXAFS and XPDF, when used complementary, are useful characterization techniques.

  11. Bulk viscosity in holographic Lifshitz hydrodynamics

    International Nuclear Information System (INIS)

    Hoyos, Carlos; Kim, Bom Soo; Oz, Yaron

    2014-01-01

    We compute the bulk viscosity in holographic models dual to theories with Lifshitz scaling and/or hyperscaling violation, using a generalization of the bulk viscosity formula derived in arXiv:1103.1657 from the null focusing equation. We find that only a class of models with massive vector fields are truly Lifshitz scale invariant, and have a vanishing bulk viscosity. For other holographic models with scalars and/or massless vector fields we find a universal formula in terms of the dynamical exponent and the hyperscaling violation exponent

  12. Bulk Leisure--Problem or Blessing?

    Science.gov (United States)

    Beland, Robert M.

    1983-01-01

    With an increasing number of the nation's work force experiencing "bulk leisure" time because of new work scheduling procedures, parks and recreation offices are encouraged to examine their program scheduling and content. (JM)

  13. Technical specifications for the bulk shielding reactor

    International Nuclear Information System (INIS)

    1986-05-01

    This report provides information concerning the technical specifications for the Bulk Shielding Reactor. Areas covered include: safety limits and limiting safety settings; limiting conditions for operation; surveillance requirements; design features; administrative controls; and monitoring of airborne effluents. 10 refs

  14. Synthesis and Secretion of Isoflavones by Field-Grown Soybean.

    Science.gov (United States)

    Sugiyama, Akifumi; Yamazaki, Yumi; Hamamoto, Shoichiro; Takase, Hisabumi; Yazaki, Kazufumi

    2017-09-01

    Isoflavones play important roles in rhizosphere plant-microbe interactions. Daidzein and genistein secreted by soybean roots induce the symbiotic interaction with rhizobia and may modulate rhizosphere interactions with microbes. Yet despite their important roles, little is known about the biosynthesis, secretion and fate of isoflavones in field-grown soybeans. Here, we analyzed isoflavone contents and the expression of isoflavone biosynthesis genes in field-grown soybeans. In roots, isoflavone contents and composition did not change with crop growth, but the expression of UGT4, an isoflavone-specific 7-O-glucosyltransferase, and of ICHG (isoflavone conjugates hydrolyzing beta-glucosidase) was decreased during the reproductive stages. Isoflavone contents were higher in rhizosphere soil than in bulk soil during both vegetative and reproductive stages, and were comparable in the rhizosphere soil between these two stages. We analyzed the degradation dynamics of daidzein and its glucosides to develop a model for predicting rhizosphere isoflavone contents from the amount of isoflavones secreted in hydroponic culture. Conjugates of daidzein were degraded much faster than daidzein, with degradation rate constants of 8.51 d-1 for malonyldaidzin and 11.6 d-1 for daidzin, vs. 9.15 × 10-2 d-1 for daidzein. The model suggested that secretion of isoflavones into the rhizosphere is higher during vegetative stages than during reproductive stages in field-grown soybean. © The Author 2017. Published by Oxford University Press on behalf of Japanese Society of Plant Physiologists. All rights reserved. For permissions, please email: journals.permissions@oup.com.

  15. Force measurements for levitated bulk superconductors

    International Nuclear Information System (INIS)

    Tachi, Y.; Sawa, K.; Iwasa, Y.; Nagashima, K.; Otani, T.; Miyamoto, T.; Tomita, M.; Murakami, M.

    2000-01-01

    We have developed a force measurement system which enables us to directly measure the levitation force of levitated bulk superconductors. Experimental data of the levitation forces were compared with the results of numerical simulation based on the levitation model that we deduced in our previous paper. They were in fairly good agreement, which confirms that our levitation model can be applied to the force analyses for levitated bulk superconductors. (author)

  16. Force measurements for levitated bulk superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Tachi, Y. [Department of Electrical Engineering, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama (Japan); ISTEC, Superconductivity Research Laboratory, 1-16-25 Shibaura, Minato-ku, Tokyo (Japan). E-mail: tachi at istec.or.jp; Uemura, N. [Department of Electrical Engineering, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama (Japan); ISTEC, Superconductivity Research Laboratory, 1-16-25 Shibaura, Minato-ku, Tokyo (Japan); Sawa, K. [Department of Electrical Engineering, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama (Japan); Iwasa, Y. [Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA (United States); Nagashima, K. [Railway Technical Research Institute, Hikari-cho, Kokubunji-shi, Tokyo (Japan); Otani, T.; Miyamoto, T.; Tomita, M.; Murakami, M. [ISTEC, Superconductivity Research Laboratory, 1-16-25 Shibaura, Minato-ku, Tokyo (Japan)

    2000-06-01

    We have developed a force measurement system which enables us to directly measure the levitation force of levitated bulk superconductors. Experimental data of the levitation forces were compared with the results of numerical simulation based on the levitation model that we deduced in our previous paper. They were in fairly good agreement, which confirms that our levitation model can be applied to the force analyses for levitated bulk superconductors. (author)

  17. ANALISIS KESELAMATAN TERMOHIDROLIK BULK SHIELDING REAKTOR KARTINI

    Directory of Open Access Journals (Sweden)

    Azizul Khakim

    2015-10-01

    Full Text Available ABSTRAK ANALISIS KESELAMATAN TERMOHIDROLIK BULK SHIELDING REAKTOR KARTINI. Bulk shielding merupakan fasilitas yang terintegrasi dengan reaktor Kartini yang berfungsi sebagai penyimpanan sementara bahan bakar bekas. Fasilitas ini merupakan fasilitas yang termasuk dalam struktur, sistem dan komponen (SSK yang penting bagi keselamatan. Salah satu fungsi keselamatan dari sistem penanganan dan penyimpanan bahan bakar adalah mencegah kecelakaan kekritisan yang tak terkendali dan membatasi naiknya temperatur bahan bakar. Analisis keselamatan paling kurang harus mencakup analisis keselamatan dari sisi neutronik dan termo hidrolik Bulk shielding. Analisis termo hidrolik ditujukan untuk memastikan perpindahan panas dan proses pendinginan bahan bakar bekas berjalan baik dan tidak terjadi akumulasi panas yang mengancam integritas bahan bakar. Code tervalidasi PARET/ANL digunakan untuk analisis pendinginan dengan mode konveksi alam. Hasil perhitungan menunjukkan bahwa mode pendinginan konvekasi alam cukup memadai dalam mendinginkan panas sisa tanpa mengakibatkan kenaikan temperatur bahan bakar yang signifikan. Kata kunci: Bulk shielding, bahan bakar bekas, konveksi alam, PARET.   ABSTRACT THERMAL HYDRAULIC SAFETY ANALYSIS OF BULK SHIELDING KARTINI REACTOR. Bulk shielding is an integrated facility to Kartini reactor which is used for temporary spent fuels storage. The facility is one of the structures, systems and components (SSCs important to safety. Among the safety functions of fuel handling and storage are to prevent any uncontrolable criticality accidents and to limit the fuel temperature increase. Safety analyses should, at least, cover neutronic and thermal hydraulic calculations of the bulk shielding. Thermal hydraulic analyses were intended to ensure that heat removal and the process of the spent fuels cooling takes place adequately and no heat accumulation that challenges the fuel integrity. Validated code, PARET/ANL was used for analysing the

  18. Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.; Arehart, Aaron R.; Ringel, Steven A.

    2018-04-01

    Deep level defects were characterized in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (PAMBE) using deep level optical spectroscopy (DLOS) and deep level transient (thermal) spectroscopy (DLTS) applied to Ni/β-Ga2O3:Ge (010) Schottky diodes that displayed Schottky barrier heights of 1.50 eV. DLOS revealed states at EC - 2.00 eV, EC - 3.25 eV, and EC - 4.37 eV with concentrations on the order of 1016 cm-3, and a lower concentration level at EC - 1.27 eV. In contrast to these states within the middle and lower parts of the bandgap probed by DLOS, DLTS measurements revealed much lower concentrations of states within the upper bandgap region at EC - 0.1 - 0.2 eV and EC - 0.98 eV. There was no evidence of the commonly observed trap state at ˜EC - 0.82 eV that has been reported to dominate the DLTS spectrum in substrate materials synthesized by melt-based growth methods such as edge defined film fed growth (EFG) and Czochralski methods [Zhang et al., Appl. Phys. Lett. 108, 052105 (2016) and Irmscher et al., J. Appl. Phys. 110, 063720 (2011)]. This strong sensitivity of defect incorporation on crystal growth method and conditions is unsurprising, which for PAMBE-grown β-Ga2O3:Ge manifests as a relatively "clean" upper part of the bandgap. However, the states at ˜EC - 0.98 eV, EC - 2.00 eV, and EC - 4.37 eV are reminiscent of similar findings from these earlier results on EFG-grown materials, suggesting that possible common sources might also be present irrespective of growth method.

  19. Competitiveness of organically grown cereals

    Directory of Open Access Journals (Sweden)

    Jaroslav Jánský

    2007-01-01

    Full Text Available The contribution is aimed at the assessment of recommended crop management practices of chosen cereals for organic farming. To increase competitiveness, these practices are modified depending on soil and climatic conditions, and on a way of production use. Furthermore, impacts of the recommended crop management practices on economics of growing chosen cereals are evaluated and compared with economic results obtained under conventional farming. It is assumed that achieved results will contribute to the increase in proportion of arable crops in the Czech Republic where organic production offer does not meet current demands.When evaluating results of growing individual cereal species in a selective set of organic farms, triticale, spelt and spring barley (in this ranking can be considered as profitable crops. Moreover, triticale and spelt have even higher gross margin under organic farming than under conventional farming (by 62 % in triticale. Oat brings losses, however, it is important for livestock production. Winter wheat seems to be also unprofitable since less grain is produced at lower imputs per hectare and only part of it is produced in quality “bio”, i.e. marketed for higher prices. Rye also brings losses under organic farming, particularly due to lower yields, similarly to the other mentioned cereals. Special cereal species that are still neglected in organic farming systems are of potential use. Durum wheat has vitreous kernels with a high content of quality gluten which is used for pasta production. It can be grown in the maize production area on fertile soils only.

  20. Development of superconductor bulk for superconductor bearing

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Chan Joong; Jun, Byung Hyuk; Park, Soon Dong (and others)

    2008-08-15

    Current carrying capacity is one of the most important issues in the consideration of superconductor bulk materials for engineering applications. There are numerous applications of Y-Ba-Cu-O (YBCO) bulk superconductors e.g. magnetic levitation train, flywheel energy storage system, levitation transportation, lunar telescope, centrifugal device, magnetic shielding materials, bulk magnets etc. Accordingly, to obtain YBCO materials in the form of large, single crystals without weak-link problem is necessary. A top seeded melt growth (TSMG) process was used to fabricate single crystal YBCO bulk superconductors. The seeded and infiltration growth (IG) technique was also very promising method for the synthesis of large, single-grain YBCO bulk superconductors with good superconducting properties. 5 wt.% Ag doped Y211 green compacts were sintered at 900 .deg. C {approx} 1200 .deg.C and then a single crystal YBCO was fabricated by an infiltration method. A refinement and uniform distribution of the Y211 particles in the Y123 matrix were achieved by sintering the Ag-doped samples. This enhancement of the critical current density was ascribable to a fine dispersion of the Y211 particles, a low porosity and the presence of Ag particles. In addition, we have designed and manufactured large YBCO single domain with levitation force of 10-13 kg/cm{sup 2} using TSMG processing technique.

  1. Module 13: Bulk Packaging Shipments by Highway

    International Nuclear Information System (INIS)

    Przybylski, J.L.

    1994-07-01

    The Hazardous Materials Modular Training Program provides participating United States Department of Energy (DOE) sites with a basic, yet comprehensive, hazardous materials transportation training program for use onsite. This program may be used to assist individual program entities to satisfy the general awareness, safety training, and function specific training requirements addressed in Code of Federal Regulation (CFR), Title 49, Part 172, Subpart H -- ''Training.'' Module 13 -- Bulk Packaging Shipments by Highway is a supplement to the Basic Hazardous Materials Workshop. Module 13 -- Bulk Packaging Shipments by Highway focuses on bulk shipments of hazardous materials by highway mode, which have additional or unique requirements beyond those addressed in the ten module core program. Attendance in this course of instruction should be limited to those individuals with work experience in transporting hazardous materials utilizing bulk packagings and who have completed the Basic Hazardous Materials Workshop or an equivalent. Participants will become familiar with the rules and regulations governing the transportation by highway of hazardous materials in bulk packagings and will demonstrate the application of these requirements through work projects and examination

  2. AlGaN/GaN HEMT structures on ammono bulk GaN substrate

    International Nuclear Information System (INIS)

    Kruszewski, P; Prystawko, P; Krysko, M; Smalc-Koziorowska, J; Leszczynski, M; Kasalynas, I; Nowakowska-Siwinska, A; Plesiewicz, J; Dwilinski, R; Zajac, M; Kucharski, R

    2014-01-01

    The work shows a successful fabrication of AlGaN/GaN high electron mobility transistor (HEMT) structures on the bulk GaN substrate grown by ammonothermal method providing an ultralow dislocation density of 10 4  cm −2  and wafers of size up to 2 inches in diameter. The AlGaN layers grown by metalorganic chemical vapor phase epitaxy method demonstrate atomically smooth surface, flat interfaces with reproduced low dislocation density as in the substrate. The test electronic devices—Schottky diodes and transistors—were designed without surface passivation and were successfully fabricated using mask-less laser-based photolithography procedures. The Schottky barrier devices demonstrate exceptionally low reverse currents smaller by a few orders of magnitude in comparison to the Schottky diodes made of AlGaN/GaN HEMT on sapphire substrate. (paper)

  3. Study of photoluminescence from annealed bulk-ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yoneta, M.; Ohishi, M.; Saito, H. [Department of Applied Physics, Okayama University of Science, 1-1 Ridai-cho, Okayama 700-0005 (Japan); Yoshino, K. [Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192 (Japan); Honda, M. [Faculty of Science, Naruto University of Education, 748 Nakajima, Takashima, Naruto-cho, Naruto-shi 772-8502 (Japan)

    2006-03-15

    We have investigated the influence of rapid thermal annealing on the photoluminescence of bulk-ZnO single crystal. As-grown ZnO wafer, illuminated by 325 nm ultraviolet light at 4.2 K, emitted the visible luminescence of pale green centered of 2.29 eV. The luminescence was observed by the anneal at the temperature range between 400 C and 1000 C, however, its intensity decreased with anneal temperature. The free-exciton and the 2.18 eV emission line were obtained by the anneal at 1200 C for 60 sec. From the X-ray diffraction and the surface morphology measurements, the improvement of the crystallinity of bulk-ZnO crystal were confirmed. We suggest that a rapid thermal annealing technique is convenience to improve the the quality of bul-ZnO single crystals. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Synthesis of carbon nanofibers by catalytic CVD of chlorobenzene over bulk nickel alloy

    Science.gov (United States)

    Kenzhin, Roman M.; Bauman, Yuri I.; Volodin, Alexander M.; Mishakov, Ilya V.; Vedyagin, Aleksey A.

    2018-01-01

    Catalytic chemical vapor deposition (CCVD) of chlorobenzene over bulk nickel alloy (nichrome) was studied. The bulk Ni-containing samples being exposed to a contact with aggressive reaction medium undergo self-disintegration followed by growth of carbon nanofibers. This process, also known as a metal dusting, requires the simultaneous presence of chlorine and hydrogen sources in the reaction mixture. Molecule of chlorobenzene complies with these requirements. The experiments on CCVD were performed in a flow-through reactor system. The initial stages of nickel disintegration process were investigated in a closed system under Autogenic Pressure at Elevated Temperature (RAPET) conditions. Scanning and transmission electron microscopies and ferromagnetic resonance spectroscopy were applied to examine the samples after their interaction with chlorobenzene. Introduction of additional hydrogen into the flow-through system was shown to affect the morphology of grown carbon nanofibers.

  5. Bulk-memory processor for data acquisition

    International Nuclear Information System (INIS)

    Nelson, R.O.; McMillan, D.E.; Sunier, J.W.; Meier, M.; Poore, R.V.

    1981-01-01

    To meet the diverse needs and data rate requirements at the Van de Graaff and Weapons Neutron Research (WNR) facilities, a bulk memory system has been implemented which includes a fast and flexible processor. This bulk memory processor (BMP) utilizes bit slice and microcode techniques and features a 24 bit wide internal architecture allowing direct addressing of up to 16 megawords of memory and histogramming up to 16 million counts per channel without overflow. The BMP is interfaced to the MOSTEK MK 8000 bulk memory system and to the standard MODCOMP computer I/O bus. Coding for the BMP both at the microcode level and with macro instructions is supported. The generalized data acquisition system has been extended to support the BMP in a manner transparent to the user

  6. Micro benchtop optics by bulk silicon micromachining

    Science.gov (United States)

    Lee, Abraham P.; Pocha, Michael D.; McConaghy, Charles F.; Deri, Robert J.

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  7. Holographic bulk reconstruction with α' corrections

    Science.gov (United States)

    Roy, Shubho R.; Sarkar, Debajyoti

    2017-10-01

    We outline a holographic recipe to reconstruct α' corrections to anti-de Sitter (AdS) (quantum) gravity from an underlying CFT in the strictly planar limit (N →∞ ). Assuming that the boundary CFT can be solved in principle to all orders of the 't Hooft coupling λ , for scalar primary operators, the λ-1 expansion of the conformal dimensions can be mapped to higher curvature corrections of the dual bulk scalar field action. Furthermore, for the metric perturbations in the bulk, the AdS /CFT operator-field isomorphism forces these corrections to be of the Lovelock type. We demonstrate this by reconstructing the coefficient of the leading Lovelock correction, also known as the Gauss-Bonnet term in a bulk AdS gravity action using the expression of stress-tensor two-point function up to subleading order in λ-1.

  8. Big bang nucleosynthesis constraints on bulk neutrinos

    International Nuclear Information System (INIS)

    Goh, H.S.; Mohapatra, R.N.

    2002-01-01

    We examine the constraints imposed by the requirement of successful nucleosynthesis on models with one large extra hidden space dimension and a single bulk neutrino residing in this dimension. We solve the Boltzmann kinetic equation for the thermal distribution of the Kaluza-Klein modes and evaluate their contribution to the energy density at the big bang nucleosynthesis epoch to constrain the size of the extra dimension R -1 ≡μ and the parameter sin 2 2θ which characterizes the mixing between the active and bulk neutrinos

  9. Synthesis of Bulk Superconducting Magnesium Diboride

    Directory of Open Access Journals (Sweden)

    Margie Olbinado

    2002-06-01

    Full Text Available Bulk polycrystalline superconducting magnesium diboride, MgB2, samples were successfully prepared via a one-step sintering program at 750°C, in pre Argon with a pressure of 1atm. Both electrical resistivity and magnetic susceptibility measurements confirmed the superconductivity of the material at 39K, with a transition width of 5K. The polycrystalline nature, granular morphology, and composition of the sintered bulk material were confirmed using X-ray diffractometry (XRD, scanning electron microscopy (SEM, and energy dispersive X-ray analysis (EDX.

  10. Radiation-hardened bulk CMOS technology

    International Nuclear Information System (INIS)

    Dawes, W.R. Jr.; Habing, D.H.

    1979-01-01

    The evolutionary development of a radiation-hardened bulk CMOS technology is reviewed. The metal gate hardened CMOS status is summarized, including both radiation and reliability data. The development of a radiation-hardened bulk silicon gate process which was successfully implemented to a commercial microprocessor family and applied to a new, radiation-hardened, LSI standard cell family is also discussed. The cell family is reviewed and preliminary characterization data is presented. Finally, a brief comparison of the various radiation-hardened technologies with regard to performance, reliability, and availability is made

  11. 46 CFR 148.04-23 - Unslaked lime in bulk.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 5 2010-10-01 2010-10-01 false Unslaked lime in bulk. 148.04-23 Section 148.04-23... HAZARDOUS MATERIALS IN BULK Special Additional Requirements for Certain Material § 148.04-23 Unslaked lime in bulk. (a) Unslaked lime in bulk must be transported in unmanned, all steel, double-hulled barges...

  12. 33 CFR 127.313 - Bulk storage.

    Science.gov (United States)

    2010-07-01

    ...) WATERFRONT FACILITIES WATERFRONT FACILITIES HANDLING LIQUEFIED NATURAL GAS AND LIQUEFIED HAZARDOUS GAS Waterfront Facilities Handling Liquefied Natural Gas Operations § 127.313 Bulk storage. (a) The operator...: (1) LNG. (2) LPG. (3) Vessel fuel. (4) Oily waste from vessels. (5) Solvents, lubricants, paints, and...

  13. Polymer-fullerene bulk heterojunction solar cells

    NARCIS (Netherlands)

    Janssen, RAJ; Hummelen, JC; Saricifti, NS

    Nanostructured phase-separated blends, or bulk heterojunctions, of conjugated Polymers and fullerene derivatives form a very attractive approach to large-area, solid-state organic solar cells.The key feature of these cells is that they combine easy, processing from solution on a variety of

  14. Bulk amorphous Mg-based alloys

    DEFF Research Database (Denmark)

    Pryds, Nini

    2004-01-01

    are discussed in this paper. On the basis of these measurements phase diagrams of the different systems were constructed. Finally, it is demonstrated that when pressing the bulk amorphous alloy onto a metallic dies at temperatures within the supercooled liquid region, the alloy faithfully replicates the surface...

  15. Longitudinal bulk a coustic mass sensor

    DEFF Research Database (Denmark)

    Hales, Jan Harry; Teva, Jordi; Boisen, Anja

    2009-01-01

    Design, fabrication and characterization, in terms of mass sensitivity, is presented for a polycrystalline silicon longitudinal bulk acoustic cantilever. The device is operated in air at 51 MHz, resulting in a mass sensitivity of 100 HZ/fg (1 fg = 10{su−15 g). The initial characterization is cond...

  16. Bulk viscosity in 2SC quark matter

    International Nuclear Information System (INIS)

    Alford, Mark G; Schmitt, Andreas

    2007-01-01

    The bulk viscosity of three-flavour colour-superconducting quark matter originating from the nonleptonic process u + s ↔ u + d is computed. It is assumed that up and down quarks form Cooper pairs while the strange quark remains unpaired (2SC phase). A general derivation of the rate of strangeness production is presented, involving contributions from a multitude of different subprocesses, including subprocesses that involve different numbers of gapped quarks as well as creation and annihilation of particles in the condensate. The rate is then used to compute the bulk viscosity as a function of the temperature, for an external oscillation frequency typical of a compact star r-mode. We find that, for temperatures far below the critical temperature T c for 2SC pairing, the bulk viscosity of colour-superconducting quark matter is suppressed relative to that of unpaired quark matter, but for T ∼> T c /30 the colour-superconducting quark matter has a higher bulk viscosity. This is potentially relevant for the suppression of r-mode instabilities early in the life of a compact star

  17. Combating wear in bulk solids handling plants

    Energy Technology Data Exchange (ETDEWEB)

    1986-01-01

    A total of five papers presented at a seminar on problems of wear caused by abrasive effects of materials in bulk handling. Topics of papers cover the designer viewpoint, practical experience from the steel, coal, cement and quarry industries to create an awareness of possible solutions.

  18. THE OPTIMIZATION OF PLUSH YARNS BULKING PROCESS

    Directory of Open Access Journals (Sweden)

    VINEREANU Adam

    2014-05-01

    Full Text Available This paper presents the experiments that were conducted on the installation of continuous bulking and thermofixing “SUPERBA” type TVP-2S for optimization of the plush yarns bulking process. There were considered plush yarns Nm 6.5/2, made of the fibrous blend of 50% indigenous wool sort 41 and 50% PES. In the first stage, it performs a thermal treatment with a turboprevaporizer at a temperature lower than thermofixing temperature, at atmospheric pressure, such that the plush yarns - deposed in a freely state on a belt conveyor - are uniformly bulking and contracting. It was followed the mathematical modeling procedure, working with a factorial program, rotatable central composite type, and two independent variables. After analyzing the parameters that have a direct influence on the bulking degree, there were selected the pre-vaporization temperature (coded x1,oC and the velocity of belt inside pre-vaporizer (coded x 2, m/min. As for the dependent variable, it was chosen the plush yarn diameter (coded y, mm. There were found the coordinates of the optimal point, and then this pair of values was verified in practice. These coordinates are: x1optim= 90oC and x 2optim= 6.5 m/min. The conclusion is that the goal was accomplished: it was obtained a good cover degree f or double-plush carpets by reducing the number of tufts per unit surface.

  19. Characteristics of bulk liquid undercooling and crystallization ...

    Indian Academy of Sciences (India)

    Characteristics of bulk liquid undercooling and crystallization behaviors ... cooling rate is fixed, the change of undercooling depends on the melt processing tem- ... solidification and a deep knowledge of undercooling of ... evolution, to obtain the information for the nucleation and ..... When cooling rate is fixed, the change.

  20. A stereoscopic look into the bulk

    Energy Technology Data Exchange (ETDEWEB)

    Czech, Bartłomiej; Lamprou, Lampros; McCandlish, Samuel; Mosk, Benjamin [Stanford Institute for Theoretical Physics, Department of Physics, Stanford University,Stanford, CA 94305 (United States); Sully, James [Theory Group, SLAC National Accelerator LaboratoryMenlo Park, CA 94025 (United States)

    2016-07-26

    We present the foundation for a holographic dictionary with depth perception. The dictionary consists of natural CFT operators whose duals are simple, diffeomorphism-invariant bulk operators. The CFT operators of interest are the “OPE blocks,” contributions to the OPE from a single conformal family. In holographic theories, we show that the OPE blocks are dual at leading order in 1/N to integrals of effective bulk fields along geodesics or homogeneous minimal surfaces in anti-de Sitter space. One widely studied example of an OPE block is the modular Hamiltonian, which is dual to the fluctuation in the area of a minimal surface. Thus, our operators pave the way for generalizing the Ryu-Takayanagi relation to other bulk fields. Although the OPE blocks are non-local operators in the CFT, they admit a simple geometric description as fields in kinematic space — the space of pairs of CFT points. We develop the tools for constructing local bulk operators in terms of these non-local objects. The OPE blocks also allow for conceptually clean and technically simple derivations of many results known in the literature, including linearized Einstein’s equations and the relation between conformal blocks and geodesic Witten diagrams.

  1. Bulk viscous cosmology in early Universe

    Indian Academy of Sciences (India)

    The effect of bulk viscosity on the early evolution of Universe for a spatially homogeneous and isotropic Robertson-Walker model is considered. Einstein's field equations are solved by using `gamma-law' equation of state = ( - 1)ρ, where the adiabatic parameter gamma () depends on the scale factor of the model.

  2. Failure by fracture in bulk metal forming

    DEFF Research Database (Denmark)

    Silva, C.M.A.; Alves, Luis M.; Nielsen, Chris Valentin

    2015-01-01

    This paper revisits formability in bulk metal forming in the light of fundamental concepts of plasticity,ductile damage and crack opening modes. It proposes a new test to appraise the accuracy, reliability and validity of fracture loci associated with crack opening by tension and out-of-plane shear...

  3. Hexaferrite multiferroics: from bulk to thick films

    Science.gov (United States)

    Koutzarova, T.; Ghelev, Ch; Peneva, P.; Georgieva, B.; Kolev, S.; Vertruyen, B.; Closset, R.

    2018-03-01

    We report studies of the structural and microstructural properties of Sr3Co2Fe24O41 in bulk form and as thick films. The precursor powders for the bulk form were prepared following the sol-gel auto-combustion method. The prepared pellets were synthesized at 1200 °C to produce Sr3Co2Fe24O41. The XRD spectra of the bulks showed the characteristic peaks corresponding to the Z-type hexaferrite structure as a main phase and second phases of CoFe2O4 and Sr3Fe2O7-x. The microstructure analysis of the cross-section of the bulk pellets revealed a hexagonal sheet structure. Large areas were observed of packages of hexagonal sheets where the separate hexagonal particles were ordered along the c axis. Sr3Co2Fe24O41 thick films were deposited from a suspension containing the Sr3Co2Fe24O41 powder. The microstructural analysis of the thick films showed that the particles had the perfect hexagonal shape typical for hexaferrites.

  4. Integration of bulk piezoelectric materials into microsystems

    Science.gov (United States)

    Aktakka, Ethem Erkan

    Bulk piezoelectric ceramics, compared to deposited piezoelectric thin-films, provide greater electromechanical coupling and charge capacity, which are highly desirable in many MEMS applications. In this thesis, a technology platform is developed for wafer-level integration of bulk piezoelectric substrates on silicon, with a final film thickness of 5-100microm. The characterized processes include reliable low-temperature (200°C) AuIn diffusion bonding and parylene bonding of bulk-PZT on silicon, wafer-level lapping of bulk-PZT with high-uniformity (+/-0.5microm), and low-damage micro-machining of PZT films via dicing-saw patterning, laser ablation, and wet-etching. Preservation of ferroelectric and piezoelectric properties is confirmed with hysteresis and piezo-response measurements. The introduced technology offers higher material quality and unique advantages in fabrication flexibility over existing piezoelectric film deposition methods. In order to confirm the preserved bulk properties in the final film, diaphragm and cantilever beam actuators operating in the transverse-mode are designed, fabricated and tested. The diaphragm structure and electrode shapes/sizes are optimized for maximum deflection through finite-element simulations. During tests of fabricated devices, greater than 12microm PP displacement is obtained by actuation of a 1mm2 diaphragm at 111kHz with integration of a 50-80% efficient power management IC, which incorporates a supply-independent bias circuitry, an active diode for low-dropout rectification, a bias-flip system for higher efficiency, and a trickle battery charger. The overall system does not require a pre-charged battery, and has power consumption of <1microW in active-mode (measured) and <5pA in sleep-mode (simulated). Under lg vibration at 155Hz, a 70mF ultra-capacitor is charged from OV to 1.85V in 50 minutes.

  5. Relaxor properties of barium titanate crystals grown by Remeika method

    Science.gov (United States)

    Roth, Michel; Tiagunov, Jenia; Dul'kin, Evgeniy; Mojaev, Evgeny

    2017-06-01

    Barium titanate (BaTiO3, BT) crystals have been grown by the Remeika method using both the regular KF and mixed KF-NaF (0.6-0.4) solvents. Typical acute angle "butterfly wing" BT crystals have been obtained, and they were characterized using x-ray diffraction, scanning electron microscopy (including energy dispersive spectroscopy), conventional dielectric and acoustic emission methods. A typical wing has a triangular plate shape which is up to 0.5 mm thick with a 10-15 mm2 area. The plate has a (001) habit and an atomically smooth outer surface. Both K+ and F- solvent ions are incorporated as dopants into the crystal lattice during growth substituting for Ba2+ and O2- ions respectively. The dopants' distribution is found to be inhomogeneous, their content being almost an order of magnitude higher (up to 2 mol%) at out surface of the plate relatively to the bulk. A few μm thick surface layer is formed where a multidomain ferroelectric net is confined between two≤1 μm thick dopant-rich surfaces. The layer as a whole possess relaxor ferroelectric properties, which is apparent from the appearance of additional broad maxima, Tm, in the temperature dependence of the dielectric permittivity around the ferroelectric phase transition. Intense acoustic emission responses detected at temperatures corresponding to the Tm values allow to observe the Tm shift to lower temperatures at higher frequencies, or dispersion, typical for relaxor ferroelectrics. The outer surface of the BT wing can thus serve as a relaxor thin film for various electronic application, such as capacitors, or as a substrate for BT-based multiferroic structure. Crystals grown from KF-NaF fluxes contain sodium atoms as an additional impurity, but the crystal yield is much smaller, and while the ferroelectric transition peak is diffuse it does not show any sign of dispersion typical for relaxor behavior.

  6. Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

    Energy Technology Data Exchange (ETDEWEB)

    Tsipas, P.; Kassavetis, S.; Tsoutsou, D.; Xenogiannopoulou, E.; Golias, E.; Giamini, S. A.; Dimoulas, A. [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece); Grazianetti, C.; Fanciulli, M. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, I-20126, Milano (Italy); Chiappe, D.; Molle, A. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy)

    2013-12-16

    Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

  7. Effect of the soil type on the microbiome in the rhizosphere of field-grown lettuce.

    Science.gov (United States)

    Schreiter, Susanne; Ding, Guo-Chun; Heuer, Holger; Neumann, Günter; Sandmann, Martin; Grosch, Rita; Kropf, Siegfried; Smalla, Kornelia

    2014-01-01

    The complex and enormous diversity of microorganisms associated with plant roots is important for plant health and growth and is shaped by numerous factors. This study aimed to unravel the effects of the soil type on bacterial communities in the rhizosphere of field-grown lettuce. We used an experimental plot system with three different soil types that were stored at the same site for 10 years under the same agricultural management to reveal differences directly linked to the soil type and not influenced by other factors such as climate or cropping history. Bulk soil and rhizosphere samples were collected 3 and 7 weeks after planting. The analysis of 16S rRNA gene fragments amplified from total community DNA by denaturing gradient gel electrophoresis and pyrosequencing revealed soil type dependent differences in the bacterial community structure of the bulk soils and the corresponding rhizospheres. The rhizosphere effect differed depending on the soil type and the plant growth developmental stage. Despite the soil type dependent differences in the bacterial community composition several genera such as Sphingomonas, Rhizobium, Pseudomonas, and Variovorax were significantly increased in the rhizosphere of lettuce grown in all three soils. The number of rhizosphere responders was highest 3 weeks after planting. Interestingly, in the soil with the highest numbers of responders the highest shoot dry weights were observed. Heatmap analysis revealed that many dominant operational taxonomic units were shared among rhizosphere samples of lettuce grown in diluvial sand, alluvial loam, and loess loam and that only a subset was increased in relative abundance in the rhizosphere compared to the corresponding bulk soil. The findings of the study provide insights into the effect of soil types on the rhizosphere microbiome of lettuce.

  8. Effect of the soil type on the microbiome in the rhizosphere of field-grown lettuce

    Directory of Open Access Journals (Sweden)

    Susanne eSchreiter

    2014-04-01

    Full Text Available The complex and enormous diversity of microorganisms associated with plant roots is important for plant health and growth and is shaped by numerous factors. This study aimed to unravel the effects of the soil type on bacterial communities in the rhizosphere of field-grown lettuce. We used an experimental plot system with three different soil types that were stored at the same site for ten years under the same agricultural management to reveal differences directly linked to the soil type and not influenced by other factors such as climate or cropping history. Bulk soil and rhizosphere samples were collected three and seven weeks after planting. The analysis of 16S rRNA gene fragments amplified from total community DNA by denaturing gradient gel electrophoresis and pyrosequencing revealed soil type-dependent differences in the bacterial community structure of the bulk soils and the corresponding rhizospheres. The rhizosphere effect differed depending on the soil type and the plant growth developmental stage. Despite the soil type-dependent differences in the bacterial community composition several genera such as Sphingomonas, Rhizobium, Pseudomonas and Variovorax were significantly increased in the rhizosphere of lettuce grown in all three different soils. The number of rhizosphere responders was highest three weeks after planting. Interestingly, in the soil with the highest numbers of responders the highest shoot dry weights were observed. Heatmap analysis revealed that many dominant operational taxonomic units were shared among rhizosphere samples of lettuce grown in diluvial sand, alluvial loam, and loess loam and that only a subset was increased in relative abundance in the rhizosphere compared to the corresponding bulk soil. The findings of the study provide insights into the effect of soil types on the rhizosphere microbiome of lettuce.

  9. Bulk solitary waves in elastic solids

    Science.gov (United States)

    Samsonov, A. M.; Dreiden, G. V.; Semenova, I. V.; Shvartz, A. G.

    2015-10-01

    A short and object oriented conspectus of bulk solitary wave theory, numerical simulations and real experiments in condensed matter is given. Upon a brief description of the soliton history and development we focus on bulk solitary waves of strain, also known as waves of density and, sometimes, as elastic and/or acoustic solitons. We consider the problem of nonlinear bulk wave generation and detection in basic structural elements, rods, plates and shells, that are exhaustively studied and widely used in physics and engineering. However, it is mostly valid for linear elasticity, whereas dynamic nonlinear theory of these elements is still far from being completed. In order to show how the nonlinear waves can be used in various applications, we studied the solitary elastic wave propagation along lengthy wave guides, and remarkably small attenuation of elastic solitons was proven in physical experiments. Both theory and generation for strain soliton in a shell, however, remained unsolved problems until recently, and we consider in more details the nonlinear bulk wave propagation in a shell. We studied an axially symmetric deformation of an infinite nonlinearly elastic cylindrical shell without torsion. The problem for bulk longitudinal waves is shown to be reducible to the one equation, if a relation between transversal displacement and the longitudinal strain is found. It is found that both the 1+1D and even the 1+2D problems for long travelling waves in nonlinear solids can be reduced to the Weierstrass equation for elliptic functions, which provide the solitary wave solutions as appropriate limits. We show that the accuracy in the boundary conditions on free lateral surfaces is of crucial importance for solution, derive the only equation for longitudinal nonlinear strain wave and show, that the equation has, amongst others, a bidirectional solitary wave solution, which lead us to successful physical experiments. We observed first the compression solitary wave in the

  10. Melting Behavior of Organic Nanocrystals Grown in Sol-gel Matrices

    International Nuclear Information System (INIS)

    Sanz, N.; Boudet, A.; Ibanez, A.

    2002-01-01

    We have characterized the thermal stability of organic nanocrystals grown in the pores of sol-gel matrices. The structure has been measured with transmission electron microscopy (TEM) analysis. Depending on the nature of organic molecules and sol-gel matrices, we have modified the dye-matrix interactions and the interfacial structure between nanocrystals and gel-glasses. When the dye-matrix interactions are weak (Van der Waals' bonds), the corresponding interfacial structure observed by TEM is sharp and the nanocrystals melt below the bulk melting point. On the other hand, when the dye-matrix interactions are strong (hydrogen bonds), the interfacial structure is fuzzy and a great superheating of organic nanocrystals is observed in comparison to the bulk melting point of the dye

  11. Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

    KAUST Repository

    Pergolesi, Daniele

    2015-02-01

    Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

  12. Fluctuation effects in bulk polymer phase behavior

    International Nuclear Information System (INIS)

    Bates, F.S.; Rosedale, J.H.; Stepanek, P.; Lodge, T.P.; Wiltzius, P.; Hjelm R, Jr.; Fredrickson, G.H.

    1990-01-01

    Bulk polymer-polymer, and block copolymer, phase behaviors have traditionally been interpreted using mean-field theories. Recent small-angle neutron scattering (SANS) studies of critical phenomena in model binary polymer mixtures confirm that non-mean-field behavior is restricted to a narrow range of temperatures near the critical point, in close agreement with the Ginzburg criterion. In contrast, strong derivations from mean-field behavior are evident in SANS and rheological measurements on model block copolymers more than 50C above the order-disorder transition (ODT), which can be attributed to sizeable composition fluctuations. Such fluctuation effects undermine the mean-field assumption, conventionally applied to bulk polymers, and result in qualitative changes in phase behavior, such as the elimination of a thermodynamic stability limit in these materials. The influence of fluctuation effects on block copolymer and binary mixture phase behavior is compared and contrasted in this presentation

  13. Nuclear Matter Bulk Parameter Scales and Correlations

    International Nuclear Information System (INIS)

    Santos, B. M.; Delfino, A.; Dutra, M.; Lourenço, O.

    2015-01-01

    We study the arising of correlations among some isovector bulk parameters in nonrelativistic and relativistic hadronic mean-field models. For the former, we investigate correlations in the nonrelativistic (NR) limit of relativistic point-coupling models. We provide analytical correlations, for the NR limit model, between the symmetry energy and its derivatives, namely, the symmetry energy slope, curvature, skewness and fourth order derivative, discussing the conditions in which they are linear ones. We also show that some correlations presented in the NR limit model are reproduced for relativistic models presenting cubic and quartic self-interactions in its scalar field. As a direct application of such linear correlations, we remark its association with possible crossing points in the density dependence of the linearly correlated bulk parameter. (author)

  14. Structural determinants in the bulk heterojunction.

    Science.gov (United States)

    Acocella, Angela; Höfinger, Siegfried; Haunschmid, Ernst; Pop, Sergiu C; Narumi, Tetsu; Yasuoka, Kenji; Yasui, Masato; Zerbetto, Francesco

    2018-02-21

    Photovoltaics is one of the key areas in renewable energy research with remarkable progress made every year. Here we consider the case of a photoactive material and study its structural composition and the resulting consequences for the fundamental processes driving solar energy conversion. A multiscale approach is used to characterize essential molecular properties of the light-absorbing layer. A selection of bulk-representative pairs of donor/acceptor molecules is extracted from the molecular dynamics simulation of the bulk heterojunction and analyzed at increasing levels of detail. Significantly increased ground state energies together with an array of additional structural characteristics are identified that all point towards an auxiliary role of the material's structural organization in mediating charge-transfer and -separation. Mechanistic studies of the type presented here can provide important insights into fundamental principles governing solar energy conversion in next-generation photovoltaic devices.

  15. ANFO bulk loading in coal mines

    Energy Technology Data Exchange (ETDEWEB)

    Gajjar, A.

    1987-08-01

    With India's total coal production projected to increase from 152 to 237 million tons by 1990, net additional production from new mines must be more because of substantial depletion in existing mines. This article discusses the best possible application of explosive techniques in open-cast coal mines to economize production cost. The most energy-efficient and safest explosive is ANFO (ammonium nitrate, fuel oil); however, manual charging by INFO is not possible. Therefore, the solution is the application of bulk-loading systems of ANFO for giant mining operations. Cost of blasting per ton of coal production in India is in the range of Rs 25. Thus, the author suggests it will be the responsibility of mining engineers to see that the ANFO based bulk-loading system is implemented and the cost of production per ton reduced to Rs 19.50.

  16. Nonlinear AC susceptibility, surface and bulk shielding

    Science.gov (United States)

    van der Beek, C. J.; Indenbom, M. V.; D'Anna, G.; Benoit, W.

    1996-02-01

    We calculate the nonlinear AC response of a thin superconducting strip in perpendicular field, shielded by an edge current due to the geometrical barrier. A comparison with the results for infinite samples in parallel field, screened by a surface barrier, and with those for screening by a bulk current in the critical state, shows that the AC response due to a barrier has general features that are independent of geometry, and that are significantly different from those for screening by a bulk current in the critical state. By consequence, the nonlinear (global) AC susceptibility can be used to determine the origin of magnetic irreversibility. A comparison with experiments on a Bi 2Sr 2CaCu 2O 8+δ crystal shows that in this material, the low-frequency AC screening at high temperature is mainly due to the screening by an edge current, and that this is the unique source of the nonlinear magnetic response at temperatures above 40 K.

  17. Multilayer Integrated Film Bulk Acoustic Resonators

    CERN Document Server

    Zhang, Yafei

    2013-01-01

    Multilayer Integrated Film Bulk Acoustic Resonators mainly introduces the theory, design, fabrication technology and application of a recently developed new type of device, multilayer integrated film bulk acoustic resonators, at the micro and nano scale involving microelectronic devices, integrated circuits, optical devices, sensors and actuators, acoustic resonators, micro-nano manufacturing, multilayer integration, device theory and design principles, etc. These devices can work at very high frequencies by using the newly developed theory, design, and fabrication technology of nano and micro devices. Readers in fields of IC, electronic devices, sensors, materials, and films etc. will benefit from this book by learning the detailed fundamentals and potential applications of these advanced devices. Prof. Yafei Zhang is the director of the Ministry of Education’s Key Laboratory for Thin Films and Microfabrication Technology, PRC; Dr. Da Chen was a PhD student in Prof. Yafei Zhang’s research group.

  18. Internal shear cracking in bulk metal forming

    DEFF Research Database (Denmark)

    Christiansen, Peter; Nielsen, Chris Valentin; Bay, Niels Oluf

    2017-01-01

    This paper presents an uncoupled ductile damage criterion for modelling the opening and propagation of internal shear cracks in bulk metal forming. The criterion is built upon the original work on the motion of a hole subjected to shear with superimposed tensile stress triaxiality and its overall...... performance is evaluated by means of side-pressing formability tests in Aluminium AA2007-T6 subjected to different levels of pre-strain. Results show that the new proposed criterionis able to combine simplicity with efficiency for predicting the onset of fracture and the crack propagation path for the entire...... cracking to internal cracks formed undert hree-dimensional states of stress that are typical of bulk metal forming....

  19. Induction detection of concealed bulk banknotes

    Science.gov (United States)

    Fuller, Christopher; Chen, Antao

    2012-06-01

    The smuggling of bulk cash across borders is a serious issue that has increased in recent years. In an effort to curb the illegal transport of large numbers of paper bills, a detection scheme has been developed, based on the magnetic characteristics of bank notes. The results show that volumes of paper currency can be detected through common concealing materials such as plastics, cardboard, and fabrics making it a possible potential addition to border security methods. The detection scheme holds the potential of also reducing or eliminating false positives caused by metallic materials found in the vicinity, by observing the stark difference in received signals caused by metal and currency. The detection scheme holds the potential to detect for both the presence and number of concealed bulk notes, while maintaining the ability to reduce false positives caused by metal objects.

  20. Bulk viscous cosmology with causal transport theory

    International Nuclear Information System (INIS)

    Piattella, Oliver F.; Fabris, Júlio C.; Zimdahl, Winfried

    2011-01-01

    We consider cosmological scenarios originating from a single imperfect fluid with bulk viscosity and apply Eckart's and both the full and the truncated Müller-Israel-Stewart's theories as descriptions of the non-equilibrium processes. Our principal objective is to investigate if the dynamical properties of Dark Matter and Dark Energy can be described by a single viscous fluid and how such description changes when a causal theory (Müller-Israel-Stewart's, both in its full and truncated forms) is taken into account instead of Eckart's non-causal one. To this purpose, we find numerical solutions for the gravitational potential and compare its behaviour with the corresponding ΛCDM case. Eckart's and the full causal theory seem to be disfavoured, whereas the truncated theory leads to results similar to those of the ΛCDM model for a bulk viscous speed in the interval 10 −11 || cb 2 ∼ −8

  1. Raman characterization of bulk ferromagnetic nanostructured graphite

    International Nuclear Information System (INIS)

    Pardo, Helena; Divine Khan, Ngwashi; Faccio, Ricardo; Araújo-Moreira, F.M.; Fernández-Werner, Luciana

    2012-01-01

    Raman spectroscopy was used to characterize bulk ferromagnetic graphite samples prepared by controlled oxidation of commercial pristine graphite powder. The G:D band intensity ratio, the shape and position of the 2D band and the presence of a band around 2950 cm -1 showed a high degree of disorder in the modified graphite sample, with a significant presence of exposed edges of graphitic planes as well as a high degree of attached hydrogen atoms.

  2. Depositing bulk or micro-scale electrodes

    Science.gov (United States)

    Shah, Kedar G.; Pannu, Satinderpall S.; Tolosa, Vanessa; Tooker, Angela C.; Sheth, Heeral J.; Felix, Sarah H.; Delima, Terri L.

    2016-11-01

    Thicker electrodes are provided on microelectronic device using thermo-compression bonding. A thin-film electrical conducting layer forms electrical conduits and bulk depositing provides an electrode layer on the thin-film electrical conducting layer. An insulating polymer layer encapsulates the electrically thin-film electrical conducting layer and the electrode layer. Some of the insulating layer is removed to expose the electrode layer.

  3. Theory of thermal expansivity and bulk modulus

    International Nuclear Information System (INIS)

    Kumar, Munish

    2005-01-01

    The expression for thermal expansivity and bulk modulus, claimed by Shanker et al. to be new [Physica B 233 (1977) 78; 245 (1998) 190; J. Phys. Chem. Solids 59 (1998) 197] are compared with the theory of high pressure-high temperature reported by Kumar and coworkers. It is concluded that the Shanker formulation and the relations based on this are equal to the approach of Kumar et al. up to second order

  4. Depleted Bulk Heterojunction Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Barkhouse, D. Aaron R.

    2011-05-26

    The first solution-processed depleted bulk heterojunction colloidal quantum dot solar cells are presented. The architecture allows for high absorption with full depletion, thereby breaking the photon absorption/carrier extraction compromise inherent in planar devices. A record power conversion of 5.5% under simulated AM 1.5 illumination conditions is reported. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. A bulk viscosity driven inflationary model

    International Nuclear Information System (INIS)

    Waga, I.; Falcao, R.C.; Chanda, R.

    1985-01-01

    Bulk viscosity associated with the production of heavy particles during the GUT phase transition can lead to exponential or 'generalized' inflation. The condition of inflation proposed is independent of the details of the phase transition and remains unaltered in presence of a cosmological constant. Such mechanism avoids the extreme supercooling and reheating needed in the usual inflationary models. The standard baryongenesis mechanism can be maintained. (Author) [pt

  6. Evidence for Bulk Ripplocations in Layered Solids

    Science.gov (United States)

    Gruber, Jacob; Lang, Andrew C.; Griggs, Justin; Taheri, Mitra L.; Tucker, Garritt J.; Barsoum, Michel W.

    2016-09-01

    Plastically anisotropic/layered solids are ubiquitous in nature and understanding how they deform is crucial in geology, nuclear engineering, microelectronics, among other fields. Recently, a new defect termed a ripplocation-best described as an atomic scale ripple-was proposed to explain deformation in two-dimensional solids. Herein, we leverage atomistic simulations of graphite to extend the ripplocation idea to bulk layered solids, and confirm that it is essentially a buckling phenomenon. In contrast to dislocations, bulk ripplocations have no Burgers vector and no polarity. In graphite, ripplocations are attracted to other ripplocations, both within the same, and on adjacent layers, the latter resulting in kink boundaries. Furthermore, we present transmission electron microscopy evidence consistent with the existence of bulk ripplocations in Ti3SiC2. Ripplocations are a topological imperative, as they allow atomic layers to glide relative to each other without breaking the in-plane bonds. A more complete understanding of their mechanics and behavior is critically important, and could profoundly influence our current understanding of how graphite, layered silicates, the MAX phases, and many other plastically anisotropic/layered solids, deform and accommodate strain.

  7. Accelerating universes driven by bulk particles

    International Nuclear Information System (INIS)

    Brito, F.A.; Cruz, F.F.; Oliveira, J.F.N.

    2005-01-01

    We consider our universe as a 3d domain wall embedded in a 5d dimensional Minkowski space-time. We address the problem of inflation and late time acceleration driven by bulk particles colliding with the 3d domain wall. The expansion of our universe is mainly related to these bulk particles. Since our universe tends to be permeated by a large number of isolated structures, as temperature diminishes with the expansion, we model our universe with a 3d domain wall with increasing internal structures. These structures could be unstable 2d domain walls evolving to fermi-balls which are candidates to cold dark matter. The momentum transfer of bulk particles colliding with the 3d domain wall is related to the reflection coefficient. We show a nontrivial dependence of the reflection coefficient with the number of internal dark matter structures inside the 3d domain wall. As the population of such structures increases the velocity of the domain wall expansion also increases. The expansion is exponential at early times and polynomial at late times. We connect this picture with string/M-theory by considering BPS 3d domain walls with structures which can appear through the bosonic sector of a five-dimensional supergravity theory

  8. Sodium Flux Growth of Bulk Gallium Nitride

    Science.gov (United States)

    Von Dollen, Paul Martin

    This dissertation focused on development of a novel apparatus and techniques for crystal growth of bulk gallium nitride (GaN) using the sodium flux method. Though several methods exist to produce bulk GaN, none have been commercialized on an industrial scale. The sodium flux method offers potentially lower cost production due to relatively mild process conditions while maintaining high crystal quality. But the current equipment and methods for sodium flux growth of bulk GaN are generally not amenable to large-scale crystal growth or in situ investigation of growth processes, which has hampered progress. A key task was to prevent sodium loss or migration from the sodium-gallium growth melt while permitting N2 gas to access the growing crystal, which was accomplished by implementing a reflux condensing stem along with a reusable sealed capsule. The reflux condensing stem also enabled direct monitoring and control of the melt temperature, which has not been previously reported for the sodium flux method. Molybdenum-based materials were identified from a corrosion study as candidates for direct containment of the corrosive sodium-gallium melt. Successful introduction of these materials allowed implementation of a crucible-free containment system, which improved process control and can potentially reduce crystal impurity levels. Using the new growth system, the (0001) Ga face (+c plane) growth rate was >50 mum/hr, which is the highest bulk GaN growth rate reported for the sodium flux method. Omega X-ray rocking curve (?-XRC) measurements indicated the presence of multiple grains, though full width at half maximum (FWHM) values for individual peaks were 1020 atoms/cm3, possibly due to reactor cleaning and handling procedures. This dissertation also introduced an in situ technique to correlate changes in N2 pressure with dissolution of nitrogen and precipitation of GaN from the sodium-gallium melt. Different stages of N2 pressure decay were identified and linked to

  9. Influence of the size of Gd211 starting powder on the critical current density of Gd-Ba-Cu-O bulk superconductor

    International Nuclear Information System (INIS)

    Nariki, S.; Seo, S.J.; Sakai, N.; Murakami, M.

    2000-01-01

    The relationship between the particle size of Gd211 powder in the precursor and the particle size of Gd211 inclusions in Gd-Ba-Cu-O bulk has been investigated. Gd211 starting powders with various diameters were prepared by the calcination of Gd 2 O 3 , BaO 2 and CuO powders at different temperatures between 800 and 1000 deg. C. The particle size of Gd211 in the melt-grown bulk was proportional to the particle size of the initial Gd211 powder. In conclusion, the employment of fine Gd211 powder led to a size reduction of 211 particles in the bulk, while largely enhancing the J c values in low magnetic fields. A large Gd-Ba-Cu-O/Ag bulk sample, 32 mm in diameter, could also be fabricated by the hot-seeding method. The maximum trapped field value revealed 1.5 T at 77 K. (author)

  10. ZnO homoepitaxy on the O polar face of hydrothermal and melt-grown substrates by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rogers, D.J. [Nanovation SARL, Orsay (France); Technical Univ. of Troyes (France); CNRS, Troyes (France); Hosseini Teherani, F. [Nanovation SARL, Orsay (France); Largeteau, A.; Demazeau, G. [ICMCB-CNRS, Bordeaux 1 University (Science and Technology), Pessac (France); Moisson, C.; Turover, D. [Novasic, Savoie Technolac, Arche Bat. 4, BP 267, Le Bourget du Lac (France); Nause, J. [Cermet Inc., Atlanta, GA (United States); Garry, G. [Thales Research, Domaine de Corbeville, Orsay (France); Kling, R.; Gruber, T. [Ulm University, Department of Semiconductor Physics, Ulm (Germany); Waag, A. [Braunschweig Technical University, Institute of Semiconductor Technology, Braunschweig (Germany); Jomard, F.; Galtier, P.; Lusson, A. [LPSC-CNRS, Meudon (France); Monteiro, T.; Soares, M.J.; Neves, A.; Carmo, M.C.; Peres, M. [University of Aveiro, Physics Department, Aveiro (Portugal); Lerondel, G.; Hubert, C. [Technical University of Troyes-CNRS (FRE2671), 12 rue Marie Curie, BP 2060, Troyes (France)

    2007-07-15

    2 cm diameter hydrothermal ZnO crystals were grown and then made into substrates using both mechanical and chemical-mechanical polishing (CMP). CMP polishing showed superior results with an (0002) {omega} scan full width half maximum (FWHM) of 67 arcsec and an root mean square (RMS) roughness of 2 Aa. In comparison, commercial melt-grown substrates exhibited broader X-ray diffraction (XRD) linewidths with evidence of sub-surface crystal damage due to polishing, including a downward shift of c-lattice parameter. Secondary ion mass spectroscopy revealed strong Li, Fe, Co, Al and Si contamination in the hydrothermal crystals as opposed to the melt-grown substrates, for which glow discharge mass spectroscopy studies had reported high levels of Pb, Fe, Cd and Si. Low temperature photoluminescence (PL) studies indicated that the hydrothermal crystal had high defect and/or impurity concentrations compared with the melt-grown substrate. The dominant bound exciton for the melt-grown substrate was indexed to Al. ZnO films were grown using pulsed laser deposition. The melt-grown substrates gave superior results with XRD (0002) {omega} and 2{theta}/{omega} WHM of 124 and 34 arcsec, respectively. Atomic force microscope measurements indicated a low RMS roughness (1.9 nm) as confirmed by fringes in the XRD 2{theta}/{omega} scan. It was suggested that the improvement in XRD response relative to the substrate might be due to ''healing'' of sub-surface polishing damage due to the elevated T{sub s} used for the growth. Indeed the c-lattice parameter for the homoepitaxial layer on the melt-grown substrate had become that which would be expected for strain-free ZnO. Furthermore, the stability of the PL peak positions relative to bulk ZnO, confirmed that the films appear practically strain free. (orig.)

  11. Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

    Science.gov (United States)

    Tian, Jifa; Chang, Cuizu; Cao, Helin; He, Ke; Ma, Xucun; Xue, Qikun; Chen, Yong P.

    2014-01-01

    Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing switching off the bulk conduction). Tuning the Fermi level from bulk band to TSS strongly enhances both the WAL (increasing the number of quantum coherent channels from one to peak around two) and LMR (increasing its slope by up to 10 times). The SS-enhanced LMR is accompanied by a strongly nonlinear Hall effect, suggesting important roles of charge inhomogeneity (and a related classical LMR), although existing models of LMR cannot capture all aspects of our data. Our systematic gate and temperature dependent magnetotransport studies provide deeper insights into the nature of both MR phenomena and reveal differences between bulk and TSS transport in TI related materials. PMID:24810663

  12. Single domain YBCO/Ag bulk superconductors fabricated by seeded infiltration and growth

    International Nuclear Information System (INIS)

    Iida, K; Babu, N H; Shi, Y; Cardwell, D A; Miyazaki, T; Murakami, M; Sakai, N

    2008-01-01

    We have applied the seeded infiltration and growth (IG) technique to the processing of samples containing Ag in an attempt to fabricate Ag-doped Y-Ba-Cu-O (YBCO) bulk superconductors with enhanced mechanical properties. The IG technique has been used successfully to grow bulk Ag-doped YBCO superconductors of up to 25 mm in diameter in the form of single grains. The distribution of Ag in the parent Y-123 matrix fabricated by the IG technique is observed to be at least as uniform as that in samples grown by conventional top seeded melt growth (TSMG). Fine Y-211 particles were observed to be embedded within the Y-123 matrix for the IG processed samples, leading to a high critical current density, J c , of over 70 kA/cm 2 at 77.3 K in self-field. The distribution of Y-211 in the IG sample microstructure, however, is inhomogeneous, which leads to a variation in the spatial distribution of J c throughout the bulk matrix. A maximum-trapped field of around 0.43 T at 1.2 mm above the sample surface (i.e. including 0.7 mm for the sensor mould thickness) is observed at liquid nitrogen temperature, despite the relatively small grain size of the sample (20 mm diameter x 7 mm thickness)

  13. CONSUMER ATTITUDES TOWARD ORGANICALLY GROWN LETTUCE

    OpenAIRE

    Wolf, Marianne McGarry; Johnson, Bradey; Cochran, Kerry; Hamilton, Lynn L.

    2002-01-01

    This research shows that approximately 29 percent of lettuce purchases in California expect to purchase an organically grown lettuce product in the future. Organic lettuce purchasers are more likely to be female, have a higher household income and a higher level of education. Consumers are concerned with the freshness, quality, price, and environmental impact of the lettuce they purchase.

  14. Recrystallization phenomena of solution grown paraffin dendrites

    NARCIS (Netherlands)

    Hollander, F.F.A.; Hollander, F.; Stasse, O.; van Suchtelen, J.; van Enckevort, W.J.P.

    2001-01-01

    Paraffin crystals were grown from decane solutions using a micro-Bridgman set up for in-situ observation of the morphology at the growth front. It is shown that for large imposed velocities, dendrites are obtained. After dendritic growth, aging or recrystallization processes set in rather quickly,

  15. Transfer points of belt conveyors operating with unfavorable bulk

    Energy Technology Data Exchange (ETDEWEB)

    Goehring, H [Technische Universitaet, Dresden (German Democratic Republic)

    1989-06-01

    Describes design of belt conveyor chutes that transfer bulk of surface mines from one conveyor to another. Conveyor belt velocity is a significant parameter. Unfavorable chute design may lead to bulk flow congestion, bulk velocity losses etc. The bulk flow process is analyzed, bulk flow velocities, belt inclinations and bulk feeding from 2 conveyors into one chute are taken into account. Conventional chutes have parabolic belt impact walls. An improved version with divided impact walls is proposed that maintains a relatively high bulk velocity, reduces friction at chute walls and decreases wear and dirt build-up. Design of the improved chute is explained. It is built to adapt to existing structures without major modifications. The angle between 2 belt conveyors can be up to 90 degrees, the best bulk transfer is noted at conveyor angles below 60 degrees. Various graphs and schemes are provided. 6 refs.

  16. Brane Lorentz symmetry from Lorentz breaking in the bulk

    Energy Technology Data Exchange (ETDEWEB)

    Bertolami, O [Departamento de Fisica, Instituto Superior Tecnico, Avenida Rovisco Pais 1, 1049-001 Lisbon (Portugal); Carvalho, C [Departamento de Fisica, Instituto Superior Tecnico, Avenida Rovisco Pais 1, 1049-001 Lisbon (Portugal)

    2007-05-15

    We propose the mechanism of spontaneous symmetry breaking of a bulk vector field as a way to generate the selection of bulk dimensions invisible to the standard model confined to the brane. By assigning a nonvanishing vacuum value to the vector field, a direction is singled out in the bulk vacuum, thus breaking the bulk Lorentz symmetry. We present the condition for induced Lorentz symmetry on the brane, as phenomenologically required.

  17. Posterior bulk-filled resin composite restorations.

    DEFF Research Database (Denmark)

    van Dijken, Jan WV; Pallesen, Ulla

    2016-01-01

    up to 4mm as needed to fill the cavity 2mm short of the occlusal cavosurface. The occlusal part was completed with the nano-hybrid resin composite (Ceram X mono+). In the other cavity, the resin composite-only (Ceram X mono+) was placed in 2mm increments. The restorations were evaluated using...... Class II, 4 SDR-CeramX mono+ and 6 CeramXmono+-only restorations. The main reasons for failurewere tooth fracture (6) and secondary caries (4). The annual failure rate (AFR) for all restorations (Class I and II) was for the bulk-filled-1.1% and for the resin composite-only restorations 1...

  18. Characterization and bulk properties of oxides

    International Nuclear Information System (INIS)

    Sonder, E.; Connolly, T.F.

    1979-06-01

    The bulk properties of oxides are divided into two classes, intrinsic properties which depend solely on the identity of the material, and extrinsic ones, which differ for different samples of the same compound. Sources of tabulated numerical values of intrinsic properties are given and modern developments in information storage and retrieval are discussed. Extrinsic properties are shown to depend on defects and trace impurities in the samples. Techniques of trace impurity analysis are discussed and realistic limits of detection and accuracies are given for routine analyses

  19. High-temperature bulk acoustic wave sensors

    International Nuclear Information System (INIS)

    Fritze, Holger

    2011-01-01

    Piezoelectric crystals like langasite (La 3 Ga 5 SiO 14 , LGS) and gallium orthophosphate (GaPO 4 ) exhibit piezoelectrically excited bulk acoustic waves at temperatures of up to at least 1450 °C and 900 °C, respectively. Consequently, resonant sensors based on those materials enable new sensing approaches. Thereby, resonant high-temperature microbalances are of particular interest. They correlate very small mass changes during film deposition onto resonators or gas composition-dependent stoichiometry changes of thin films already deposited onto the resonators with the resonance frequency shift of such devices. Consequently, the objective of the work is to review the high-temperature properties, the operation limits and the measurement principles of such resonators. The electromechanical properties of high-temperature bulk acoustic wave resonators such as mechanical stiffness, piezoelectric and dielectric constant, effective viscosity and electrical conductivity are described using a one-dimensional physical model and determined accurately up to temperatures as close as possible to their ultimate limit. Insights from defect chemical models are correlated with the electromechanical properties of the resonators. Thereby, crucial properties for stable operation as a sensor under harsh conditions are identified to be the formation of oxygen vacancies and the bulk conductivity. Operation limits concerning temperature, oxygen partial pressure and water vapor pressure are given. Further, application-relevant aspects such as temperature coefficients, temperature compensation and mass sensitivity are evaluated. In addition, approximations are introduced which make the exact model handy for routine data evaluation. An equivalent electrical circuit for high-temperature resonator devices is derived based on the one-dimensional physical model. Low- and high-temperature approximations are introduced. Thereby, the structure of the equivalent circuit corresponds to the

  20. High-temperature bulk acoustic wave sensors

    Science.gov (United States)

    Fritze, Holger

    2011-01-01

    Piezoelectric crystals like langasite (La3Ga5SiO14, LGS) and gallium orthophosphate (GaPO4) exhibit piezoelectrically excited bulk acoustic waves at temperatures of up to at least 1450 °C and 900 °C, respectively. Consequently, resonant sensors based on those materials enable new sensing approaches. Thereby, resonant high-temperature microbalances are of particular interest. They correlate very small mass changes during film deposition onto resonators or gas composition-dependent stoichiometry changes of thin films already deposited onto the resonators with the resonance frequency shift of such devices. Consequently, the objective of the work is to review the high-temperature properties, the operation limits and the measurement principles of such resonators. The electromechanical properties of high-temperature bulk acoustic wave resonators such as mechanical stiffness, piezoelectric and dielectric constant, effective viscosity and electrical conductivity are described using a one-dimensional physical model and determined accurately up to temperatures as close as possible to their ultimate limit. Insights from defect chemical models are correlated with the electromechanical properties of the resonators. Thereby, crucial properties for stable operation as a sensor under harsh conditions are identified to be the formation of oxygen vacancies and the bulk conductivity. Operation limits concerning temperature, oxygen partial pressure and water vapor pressure are given. Further, application-relevant aspects such as temperature coefficients, temperature compensation and mass sensitivity are evaluated. In addition, approximations are introduced which make the exact model handy for routine data evaluation. An equivalent electrical circuit for high-temperature resonator devices is derived based on the one-dimensional physical model. Low- and high-temperature approximations are introduced. Thereby, the structure of the equivalent circuit corresponds to the Butterworth

  1. Improving the bulk data transfer experience

    Energy Technology Data Exchange (ETDEWEB)

    Guok, Chin; Guok, Chin; Lee, Jason R.; Berket, Karlo

    2008-05-07

    Scientific computations and collaborations increasingly rely on the network to provide high-speed data transfer, dissemination of results, access to instruments, support for computational steering, etc. The Energy Sciences Network is establishing a science data network to provide user driven bandwidth allocation. In a shared network environment, some reservations may not be granted due to the lack of available bandwidth on any single path. In many cases, the available bandwidth across multiple paths would be sufficient to grant the reservation. In this paper we investigate how to utilize the available bandwidth across multiple paths in the case of bulk data transfer.

  2. Forming of bulk metallic glass microcomponents

    DEFF Research Database (Denmark)

    Wert, John A.; Thomsen, Christian; Jensen, Rune Debel

    2009-01-01

    The present article considers forward extrusion, closed-die forging and backward extrusion processes for fabrication of individual microcomponents from two bulk metallic glass (BMG) compositions: Mg60Cu30Y10 and Zr44Cu40Ag8Al8. Two types of tooling were used in the present work: relatively massive...... die sets characteristic of cold forming operations for crystalline metals and lightweight die sets adapted to the special characteristics of BMGs. In addition to demonstrating that microcomponents of several geometries can be readily fabricated from BMGs, rheological properties are combined...

  3. Thulium-based bulk metallic glass

    International Nuclear Information System (INIS)

    Yu, H. B.; Yu, P.; Wang, W. H.; Bai, H. Y.

    2008-01-01

    We report the formation and properties of a thulium-based bulk metallic glass (BMG). Compared with other known rare-earth (RE) based BMGs, Tm-based BMGs show features of excellent glass formation ability, considerable higher elastic modulus, smaller Poisson's ratio, high mechanical strength, and intrinsic brittleness. The reasons for the different properties between the Tm-based and other RE-based BMGs are discussed. It is expected that the Tm-based glasses with the unique properties are appropriate candidates for studying some important issues in BMGs

  4. Bulk monitoring and segregation of radioactive wastes

    Energy Technology Data Exchange (ETDEWEB)

    Beddow, H.; Adsley, I.; Pearman, I.; Sweeney, A.; Davies, M., E-mail: helen.beddow@nuvia.co.uk [Nuvia Limited, Harwell Oxford, Didcot, Oxfordshire (United Kingdom)

    2014-07-01

    Several sites in the UK are contaminated by radioactive legacy wastes. These include; radium luminising sites and more recently the oil, and (potentially) fracking industries; sites contaminated from thorium gas mantle factories; old nuclear research sites; nuclear power sites, and the Sellafield reprocessing site. Nuvia has developed a suite of technologies to map the location of and to recover and process wastes during remedial operations. The main method for delineating contaminated areas in-situ is by use of the Groundhog system, whilst bulk monitoring methods employ the Gamma Excavation Monitor, the High Resolution Assay Monitor, and the Conveyor Active Particle System. (author)

  5. Bulk monitoring and segregation of radioactive wastes

    International Nuclear Information System (INIS)

    Beddow, H.; Adsley, I.; Pearman, I.; Sweeney, A.; Davies, M.

    2014-01-01

    Several sites in the UK are contaminated by radioactive legacy wastes. These include; radium luminising sites and more recently the oil, and (potentially) fracking industries; sites contaminated from thorium gas mantle factories; old nuclear research sites; nuclear power sites, and the Sellafield reprocessing site. Nuvia has developed a suite of technologies to map the location of and to recover and process wastes during remedial operations. The main method for delineating contaminated areas in-situ is by use of the Groundhog system, whilst bulk monitoring methods employ the Gamma Excavation Monitor, the High Resolution Assay Monitor, and the Conveyor Active Particle System. (author)

  6. Fundamental study of bulk power HVDC transmission

    International Nuclear Information System (INIS)

    1981-01-01

    Study on the HVDC power transmission have been conducted since 1956. Shinshinano-Frequency Changer had been operated at first on 1977, as our home product, and Hokkaido-Honshu DC transmission also realized at 1979. Research and Development of the bulk power HVDC have been promoted by the UHV transmission special committee in our Institute from 1980. This paper is a comprehensive report published in the parts of operating control, insulation of DC line and countermeasure of fault current, and interferences in order to contribute for planning, design and operating of the UHV DC transmission in future. (author)

  7. Calculated Bulk Properties of the Actinide Metals

    DEFF Research Database (Denmark)

    Skriver, Hans Lomholt; Andersen, O. K.; Johansson, B.

    1978-01-01

    Self-consistent relativistic calculations of the electronic properties for seven actinides (Ac-Am) have been performed using the linear muffin-tin orbitals method within the atomic-sphere approximation. Exchange and correlation were included in the local spin-density scheme. The theory explains...... the variation of the atomic volume and the bulk modulus through the 5f series in terms of an increasing 5f binding up to plutonium followed by a sudden localisation (through complete spin polarisation) in americium...

  8. Multiphase composites with extremal bulk modulus

    DEFF Research Database (Denmark)

    Gibiansky, L. V.; Sigmund, Ole

    2000-01-01

    are described. Most of our new results are related to the two-dimensional problem. A numerical topology optimization procedure that solves the inverse homogenization problem is adopted and used to look for two-dimensional three-phase composites with a maximal effective bulk modulus. For the combination...... isotropic three-dimensional three-phase composites with cylindrical inclusions of arbitrary cross-sections (plane strain problem) or transversely isotropic thin plates (plane stress or bending of plates problems). (C) 2000 Elsevier Science Ltd. All rights reserved....

  9. 7 CFR 58.313 - Print and bulk packaging rooms.

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 3 2010-01-01 2010-01-01 false Print and bulk packaging rooms. 58.313 Section 58.313 Agriculture Regulations of the Department of Agriculture (Continued) AGRICULTURAL MARKETING SERVICE (Standards....313 Print and bulk packaging rooms. Rooms used for packaging print or bulk butter and related products...

  10. 19 CFR 151.24 - Unlading facilities for bulk sugar.

    Science.gov (United States)

    2010-04-01

    ... 19 Customs Duties 2 2010-04-01 2010-04-01 false Unlading facilities for bulk sugar. 151.24 Section... OF THE TREASURY (CONTINUED) EXAMINATION, SAMPLING, AND TESTING OF MERCHANDISE Sugars, Sirups, and Molasses § 151.24 Unlading facilities for bulk sugar. When dutiable sugar is to be imported in bulk, a full...

  11. Enhancement of surface magnetism due to bulk bond dilution

    International Nuclear Information System (INIS)

    Tsallis, C.; Sarmento, E.F.; Albuquerque, E.L. de

    1985-01-01

    Within a renormalization group scheme, the phase diagram of a semi-infinite simple cubic Ising ferromagnet is discussed, with arbitrary surface and bulk coupling constants, and including possible dilution of the bulk bonds. It is obtained that dilution makes easier the appearance of surface magnetism in the absence of bulk magnetism. (Author) [pt

  12. Interface magnetism of iron grown on sulfur and hydrogen passivated GaAs(001)

    International Nuclear Information System (INIS)

    Kardasz, B.; Watkins, S. P.; Montoya, E. A.; Burrowes, C.; Girt, E.; Heinrich, B.

    2012-01-01

    Sulfur (S) and hydrogen (H) atom passivated GaAs(001) templates were used for deposition of ultrathin crystalline Fe films using molecular beam epitaxy, where the Fe thickness ranged from 10 to 45 atomic layers. Reflection high-energy electron diffraction patterns showed that the S- and H-passivated surfaces had no and very weak (1 x 2) superlattice reconstructions, respectively. This indicates that these GaAs(001) templates have a square-like symmetry. Magnetic anisotropies were investigated using the in-plane angular dependence of ferromagnetic resonance at 36 GHz. The in-plane cubic and uniaxial anisotropies and perpendicular uniaxial field were described by bulk and interface contributions, indicating that the Fe films have a high lattice coherence. The magnetic properties of the Fe films were compared to those grown on more commonly used GaAs(001) templates having a (4 x 6) reconstruction with an As-rich in-plane uniaxial symmetry. The Fe films grown on S-passivated templates exhibited unique magnetic properties caused by a decreased lattice spacing compared to the bulk Fe.

  13. Interface magnetism of iron grown on sulfur and hydrogen passivated GaAs(001)

    Energy Technology Data Exchange (ETDEWEB)

    Kardasz, B.; Watkins, S. P.; Montoya, E. A.; Burrowes, C.; Girt, E.; Heinrich, B.

    2012-04-01

    Sulfur (S) and hydrogen (H) atom passivated GaAs(001) templates were used for deposition of ultrathin crystalline Fe films using molecular beam epitaxy, where the Fe thickness ranged from 10 to 45 atomic layers. Reflection high-energy electron diffraction patterns showed that the S- and H-passivated surfaces had no and very weak (1 x 2) superlattice reconstructions, respectively. This indicates that these GaAs(001) templates have a square-like symmetry. Magnetic anisotropies were investigated using the in-plane angular dependence of ferromagnetic resonance at 36 GHz. The in-plane cubic and uniaxial anisotropies and perpendicular uniaxial field were described by bulk and interface contributions, indicating that the Fe films have a high lattice coherence. The magnetic properties of the Fe films were compared to those grown on more commonly used GaAs(001) templates having a (4 x 6) reconstruction with an As-rich in-plane uniaxial symmetry. The Fe films grown on S-passivated templates exhibited unique magnetic properties caused by a decreased lattice spacing compared to the bulk Fe.

  14. Use of containers to carry bulk and break bulk commodities and its impact on gulf region ports and international trade.

    Science.gov (United States)

    2014-08-01

    The University of New Orleans Transportation Institute was tasked by the Louisiana Transportation Research Center (LTRC) in mid-2012 to assess the use of containers to transport bulk and break bulk commodities and to determine what their impact would...

  15. Growth and properties of Nd:(Lu xGd 1-x) 3Ga 5O 12 laser crystal by Czochralski method

    Science.gov (United States)

    Jia, Zhitai; Tao, Xutang; Yu, Haohai; Dong, Chunming; Zhang, Jian; Zhang, Huaijin; Wang, Zhengping; Jiang, Minhua

    2008-10-01

    In this paper we report the growth and characterization of Nd:(Lu xGd 1-x) 3Ga 5O 12 crystal for the first time. The polycrystalline materials were synthesized by conventional solid-state reaction. Single crystal with good optical quality was successfully obtained and the dimensions of the as-grown crystal were Ø21 × 30 mm 3. X-ray powder diffraction studies confirm that the Nd:(Lu xGd 1-x) 3Ga 5O 12 crystal is isostructural with Gd 3Ga 5O 12 with unit cell parameter of 1.2361 nm which is less than that of Gd 3Ga 5O 12 crystal (1.2376 nm). The absorption and emission spectra of the crystal at room temperature have also been studied. Continuous-wave (CW) laser performance at 1.06 μm has been demonstrated on the crystal.

  16. Continuous Czochralski Growth. Silicon Sheet Growth Development of the Large Area Silicon Sheet Task of the Low Cost Silicon Solar Array Project

    Science.gov (United States)

    Merz, F.

    1979-01-01

    During the reporting period, a successful 100 kilogram run was performed. Six ingots of 13 cm diameter were grown, ranging in size from 15.5 kg to 17.7 kg. Melt replenishment methods included both poly rod and lump feed material. Samples from each ingot were prepared for solar cell fabrication and analyses, impurity analysis, and structural studies. The furnace was converted to the 14-inch hot zone and preliminary heat runs were performed. Two sucessful runs were demonstrated, by growing 25 kg ingots from 30 kg melts. Also, a 100 kg run was attempted, utilizing the 14 inch crucible hot zone, but was prematurely terminated due to excessive monoxide which accumulated on the viewports and a seed failure.

  17. Elastic properties of superconducting bulk metallic glasses

    International Nuclear Information System (INIS)

    Hempel, Marius

    2015-01-01

    Within the framework of this thesis the elastic properties of a superconducting bulk metallic glass between 10 mK and 300 K were first investigated. In order to measure the entire temperature range, in particular the low temperature part, new experimental techniques were developed. Using an inductive readout scheme for a double paddle oscillator it was possible to determine the internal friction and the relative change of sound velocity of bulk metallic glasses with high precision. This allowed for a detailed comparison of the data with different models. The analysis focuses on the low temperature regime where the properties of glassy materials are governed by atomic tunneling systems as described by the tunneling model. The influence of conduction electrons in the normal conducting state and quasiparticles in the superconducting state of the glass were accounted for in the theoretical description, resulting in a good agreement over a large temperature range between measured data and prediction of the tunneling model. This allowed for a direct determination of the coupling constant between electrons and tunneling systems. In the vicinity of the transition temperature Tc the data can only be described if a modified distribution function of the tunneling parameters is applied.

  18. Boundary-bulk relation in topological orders

    Directory of Open Access Journals (Sweden)

    Liang Kong

    2017-09-01

    Full Text Available In this paper, we study the relation between an anomaly-free n+1D topological order, which are often called n+1D topological order in physics literature, and its nD gapped boundary phases. We argue that the n+1D bulk anomaly-free topological order for a given nD gapped boundary phase is unique. This uniqueness defines the notion of the “bulk” for a given gapped boundary phase. In this paper, we show that the n+1D “bulk” phase is given by the “center” of the nD boundary phase. In other words, the geometric notion of the “bulk” corresponds precisely to the algebraic notion of the “center”. We achieve this by first introducing the notion of a morphism between two (potentially anomalous topological orders of the same dimension, then proving that the notion of the “bulk” satisfies the same universal property as that of the “center” of an algebra in mathematics, i.e. “bulk = center”. The entire argument does not require us to know the precise mathematical description of a (potentially anomalous topological order. This result leads to concrete physical predictions.

  19. Bulk delivery of explosives offers positive advantages

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1993-09-01

    The bulk delivery of precisely-formulated explosives directly to the shothole is a safe, secure and cost effective way of bringing rock to the quarry floor. This article describes several of the latest generation of Anfo trucks. The typical Anfo truck carries ammonium nitrate and fuel oil in bulk, together with several other mix constituents, including an emulsifying agent. These are designed to form the basis of a range of emulsion-type explosives. In effect, these are water in oil emulsions where the water phase consists of droplets of a saturated solution of the oxidizing material suspended in oil. The formulations may be further tailored to the shothole requirements by the addition of oils or waxes, which can alter the viscosity of the explosive. The precise and programmable controls which determine the exact quantities of materials delivered to the mixer mean that the explosive mixtures can be tailored exactly to the requirements of the blasting operation, be it the amount of rock to be dislodged, the geological conditions, or the state of the shothole - either wet or dry. 4 systems are described in detail. 3 figs.

  20. Perovskite oxides: Oxygen electrocatalysis and bulk structure

    Science.gov (United States)

    Carbonio, R. E.; Fierro, C.; Tryk, D.; Scherson, D.; Yeager, Ernest

    1987-01-01

    Perovskite type oxides were considered for use as oxygen reduction and generation electrocatalysts in alkaline electrolytes. Perovskite stability and electrocatalytic activity are studied along with possible relationships of the latter with the bulk solid state properties. A series of compounds of the type LaFe(x)Ni1(-x)O3 was used as a model system to gain information on the possible relationships between surface catalytic activity and bulk structure. Hydrogen peroxide decomposition rate constants were measured for these compounds. Ex situ Mossbauer effect spectroscopy (MES), and magnetic susceptibility measurements were used to study the solid state properties. X ray photoelectron spectroscopy (XPS) was used to examine the surface. MES has indicated the presence of a paramagnetic to magnetically ordered phase transition for values of x between 0.4 and 0.5. A correlation was found between the values of the MES isomer shift and the catalytic activity for peroxide decomposition. Thus, the catalytic activity can be correlated to the d-electron density for the transition metal cations.

  1. 78 FR 72841 - List of Bulk Drug Substances That May Be Used in Pharmacy Compounding; Bulk Drug Substances That...

    Science.gov (United States)

    2013-12-04

    .... FDA-2013-N-1525] List of Bulk Drug Substances That May Be Used in Pharmacy Compounding; Bulk Drug... proposed rule to list bulk drug substances used in pharmacy compounding and preparing to develop a list of... Formulary monograph, if a monograph exists, and the United States Pharmacopoeia chapter on pharmacy...

  2. Investigation of optical properties and electronic transitions in bulk and nano-microribbons of molybdenum trioxide

    International Nuclear Information System (INIS)

    Lupan, O; Mishra, Y K; Adelung, R; Trofim, V; Cretu, V; Stamov, I; Syrbu, N N; Tiginyanu, I

    2014-01-01

    In this work, we report on crystalline quality and optical characteristics of molybdenum trioxide (MoO 3 ) bulk and nano-microribbons grown by rapid thermal oxidation (RTO). The developed RTO procedure allows one to synthesize highly crystalline (α-phase) bulk and nano-microribbons of MoO 3 . For R–Γ indirect transitions in bulk single crystals of MoO 3 , it has been found that the width of the bandgap along the E‖c polarization, associated with transitions R v1 –Γ c1 , is lower than the width of the band gap in polarization E ⊥ c, associated with transitions R v2 –Γ c2 . This result is indicative of splitting of the absorption edge due to α-MoO 3 structural anisotropy. Studies of the polarization dependence of the absorption in nano-microribbons (d ≈ 15–500 nm) demonstrated that the energy gap corresponding to R v1 –X c1 (E‖c) transition is smaller than that of R v2 –X c2 (E ⊥ c) transition. Similar dependence has been found for the R–Y indirect transitions. The results of the investigation of the reflectance spectra in the energy range from 3 to 6 eV are shown. By using the Kramers–Kronig method, the optical functions were derived from the reflection spectra of nano-microribbons, and the polarization dependence of direct energy transitions at the point R in the Brillouin zone are determined. The alternation in splitting caused by polarization of the absorption edge related to indirect transitions due to polarization opens new prospects for the design and fabricating interesting optoelectronic devices based on α-MoO 3 bulk and nano-microribbons with characteristics dependent on the polarization of light waves. (paper)

  3. Counting molecular-beam grown graphene layers

    Energy Technology Data Exchange (ETDEWEB)

    Plaut, Annette S. [School of Physics, University of Exeter, Exeter EX4 4QL (United Kingdom); Wurstbauer, Ulrich [Department of Physics, Columbia University, New York, New York 10027 (United States); Pinczuk, Aron [Department of Physics, Columbia University, New York, New York 10027 (United States); Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027 (United States); Garcia, Jorge M. [MBE Lab, IMM-Instituto de Microelectronica de Madrid (CNM-CSIC), Madrid, E-28760 (Spain); Pfeiffer, Loren N. [Electrical Engineering Department, Princeton University, New Jersey 08544 (United States)

    2013-06-17

    We have used the ratio of the integrated intensity of graphene's Raman G peak to that of the silicon substrate's first-order optical phonon peak, accurately to determine the number of graphene layers across our molecular-beam (MB) grown graphene films. We find that these results agree well both, with those from our own exfoliated single and few-layer graphene flakes, and with the results of Koh et al.[ACS Nano 5, 269 (2011)]. We hence distinguish regions of single-, bi-, tri-, four-layer, etc., graphene, consecutively, as we scan coarsely across our MB-grown graphene. This is the first, but crucial, step to being able to grow, by such molecular-beam-techniques, a specified number of large-area graphene layers, to order.

  4. Lethal photosensitization of biofilm-grown bacteria

    Science.gov (United States)

    Wilson, Michael

    1997-12-01

    Antibacterial agents are increasingly being used for the prophylaxis and treatment of oral diseases. As these agents can be rendered ineffective by resistance development in the target organisms there is a need to develop alternative antimicrobial approaches. Light-activated antimicrobial agents release singlet oxygen and free radicals which can kill adjacent bacteria and a wide range of cariogenic and periodontopathogenic bacteria has been shown to be susceptible to such agents. In the oral cavity these organisms are present as biofilms (dental plaques) which are less susceptible to traditional antimicrobial agents than bacterial suspensions. The results of these studies have shown that biofilm-grown oral bacteria are also susceptible to lethal photosensitization although the light energy doses required are grater than those needed to kill the organisms when they are grown as aqueous suspensions.

  5. Bulk forming of industrial micro components in conventional metals and bulk metallic glasses

    DEFF Research Database (Denmark)

    Arentoft, Mogens; Paldan, Nikolas Aulin; Eriksen, Rasmus Solmer

    2007-01-01

    For production of micro components in large numbers, forging is an interesting and challenging process. The conventional metals like silver, steel and aluminum often require multi-step processes, but high productivity and increased strength justify the investment. As an alternative, bulk metallic...

  6. As-Grown Gallium Nitride Nanowire Electromechanical Resonators

    Science.gov (United States)

    Montague, Joshua R.

    Technological development in recent years has led to a ubiquity of micro- and nano-scale electromechanical devices. Sensors for monitoring temperature, pressure, mass, etc., are now found in nearly all electronic devices at both the industrial and consumer levels. As has been true for integrated circuit electronics, these electromechanical devices have continued to be scaled down in size. For many nanometer-scale structures with large surface-to-volume ratio, dissipation (energy loss) becomes prohibitively large causing a decreasing sensitivity with decreasing sensor size. In this work, gallium nitride (GaN) nanowires are investigated as singly-clamped (cantilever) mechanical resonators with typical mechanical quality factors, Q (equal to the ratio of resonance frequency to peak full-width-at-half-maximum-power) and resonance frequencies, respectively, at or above 30,000, and near 1 MHz. These Q values---in vacuum at room temperature---indicate very low levels of dissipation; they are essentially the same as those for bulk quartz crystal resonators that form the basis of simple clocks and mass sensors. The GaN nanowires have lengths and diameters, respectively, of approximately 15 micrometers and hundreds of nanometers. As-grown GaN nanowire Q values are larger than other similarly-sized, bottom-up, cantilever resonators and this property makes them very attractive for use as resonant sensors. We demonstrate the capability of detecting sub-monolayer levels of atomic layer deposited (ALD) films, and the robust nature of the GaN nanowires structure that allows for their 'reuse' after removal of such layers. In addition to electron microscope-based measurement techniques, we demonstrate the successful capacitive detection of a single nanowire using microwave homodyne reflectometry. This technique is then extended to allow for simultaneous measurements of large ensembles of GaN nanowires on a single sample, providing statistical information about the distribution of

  7. Morphology and photoresponse of crystalline antimony film grown on mica by physical vapor deposition

    Directory of Open Access Journals (Sweden)

    Shafa Muhammad

    2016-09-01

    Full Text Available Antimony is a promising material for the fabrication of photodetectors. This study deals with the growth of a photosensitive thin film by the physical vapor deposition (PVD of antimony onto mica surface in a furnace tube. The geometry of the grown structures was studied via scanning electron microscopy (SEM, X-ray diffraction (XRD, energy-dispersive X-ray spectroscopy (EDX and elemental diffraction analysis. XRD peaks of the antimony film grown on mica mostly matched with JCPDF Card. The formation of rhombohedral crystal structures in the film was further confirmed by SEM micrographs and chemical composition analysis. The Hall measurements revealed good electrical conductivity of the film with bulk carrier concentration of the order of 1022 Ω·cm-3 and mobility of 9.034 cm2/Vs. The grown film was successfully tested for radiation detection. The photoresponse of the film was evaluated using its current-voltage characteristics. These investigations revealed that the photosensitivity of the antimony film was 20 times higher than that of crystalline germanium.

  8. Atomic structure of defects in GaN:Mg grown with Ga polarity

    International Nuclear Information System (INIS)

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-01-01

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {11(und 2)3} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 ± 0.2(angstrom) displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base

  9. Thermal characterization of semiconducting polymer bulk heterojunctions

    Science.gov (United States)

    Remy, Roddel A.

    Polymer semiconductors are intriguing due to their potential use in flexible electronics. Poly (3-hexylthiophene) (P3HT)--a very common polymer in this field--is semicrystalline and it is known that crystalline P3HT has a higher hole mobility than amorphous P3HT. Quantifying each fraction in the bulk and thin film states is therefore crucial to understanding its performance in transistor and other applications. In polymer solar cells, it acts as an electron donor and is typically mixed with the nanoparticle-like molecule, phenyl-C61-butyric acid methyl ester (PCBM)--an electron acceptor--in a thin film morphology termed a bulk heterojunction (BHJ). The structural hierarchy within the bulk heterojunction is complicated and its characterization, with a focus on P3HT morphology, is the topic of this dissertation. Calorimetry can play an important role in the elucidation of P3HT morphology with quantitative analysis of the crystalline and amorphous fractions present in the material. This was demonstrated by employing differential scanning calorimetry (DSC) to obtain the enthalpy of fusion of 100% crystalline P3HT (42.9 J/g) using oligomeric P3HT measurements. The more sensitive temperature modulated DSC (TMDSC) was then used to examine the glass transition of P3HT and the crystalline, mobile amorphous and rigid amorphous phases were quantified. The presence of these phases can play a large role in understanding the charge transfer process in polymer semiconductors. BHJ thin films of 50 wt.% PCBM were then analyzed and a polymer crystallinity of 30% was found after thermal annealing from initially non-crystalline polymer material. With assistance from previously acquired small angle neutron scattering data, a thorough analysis of the entire BHJ morphology was accomplished. A surprisingly large rigid amorphous polymer phase is present in the BHJ which could be located at the P3HT/PCBM interface, affecting charge transfer. Finally, interlayer diffusion of PCBM was

  10. Radiation effects in bulk and nanostructured silicon

    Energy Technology Data Exchange (ETDEWEB)

    Holmstrom, E.

    2012-07-01

    Understanding radiation effects in silicon (Si) is of great technological importance. The material, being the basis of modern semiconductor electronics and photonics, is subjected to radiation already at the processing stage, and in many applications throughout the lifetime of the manufactured component. Despite decades of research, many fundamental questions on the subject are still not satisfactorily answered, and new ones arise constantly as device fabrication shifts towards the nanoscale. In this study, methods of computational physics are harnessed to tackle basic questions on the radiation response of bulk and nanostructured Si systems, as well as to explain atomic-scale phenomena underlying existing experimental results. Empirical potentials and quantum mechanical models are coupled with molecular dynamics simulations to model the response of Si to irradiation and to characterize the created crystal damage. The threshold displacement energy, i.e., the smallest recoil energy required to create a lattice defect, is determined in Si bulk and nanowires, in the latter system also as a function of mechanical strain. It is found that commonly used values for this quantity are drastically underestimated. Strain on the nanowire causes the threshold energy to drop, with an effect on defect production that is significantly higher than in an another nanostructure with similar dimensions, the carbon nanotube. Simulating ion irradiation of Si nanowires reveals that the large surface area to volume ratio of the nanostructure causes up to a three-fold enhancement in defect production as compared to bulk Si. Amorphous defect clusters created by energetic neutron bombardment are predicted, on the basis of their electronic structure and abundance, to cause a deleterious phenomenon called type inversion in Si strip detectors in high-energy physics experiments. The thinning of Si lamellae using a focused ion beam is studied in conjunction with experiment to unravel the cause for

  11. Heteroepitaxially grown InP solar cells

    International Nuclear Information System (INIS)

    Weinberg, I.; Swartz, C.K.; Brinker, D.J.; Wilt, D.M.

    1990-01-01

    Although they are significantly more radiation resistant than either Si or GaAs solar cells, their high wafer cost presents a barrier to the widespread use of InP solar cells in space. For this reason, the authors have initiated a program aimed at producing high efficiency, radiation resistant solar cells processed from InP heteroepitaxially grown on cheaper substrates. The authors' objective is to present the most recent results emanating from this program together with the results of their initial proton irradiations on these cells. This paper reports that InP cells were processed from a 4 micron layer of InP, grown by OMCVD on a silicon substrate, with a 0.5 micron buffer layer between the InP directly grown on a GaAs substrate. Initial feasibility studies, in a Lewis sponsored program at the Spire corporation, resulted in air mass zero efficiencies of 7.1% for the former cells and 9.1% for the latter. These initial low efficiencies are attributed to the high dislocation densities caused by lattice mismatch. The authors' preirradiation analysis indicates extremely low minority carrier diffusion lengths, in both cell base and emitter, and high values of both the diffusion and recombination components of the diode reverse saturation currents. Irradiation by 10 MeV protons, to a fluence of 10 13 cm -2 , resulted in relatively low degradation in cell efficiency, short circuit current and open circuit voltage

  12. Mineral composition of organically grown tomato

    Science.gov (United States)

    Ghambashidze, Giorgi

    2014-05-01

    In recent years, consumer concerns on environmental and health issues related to food products have increased and, as a result, the demand for organically grown production has grown. Results indicate that consumers concerned about healthy diet and environmental degradation are the most likely to buy organic food, and are willing to pay a high premium. Therefore, it is important to ensure the quality of the produce, especially for highly consumed products. The tomato (Lycopersicon esculentum) is one of the most widely consumed fresh vegetables in the world. It is also widely used by the food industries as a raw material for the production of derived products such as purees or ketchup. Consequently, many investigations have addressed the impact of plant nutrition on the quality of tomato fruit. The concentrations of minerals (P, Na, K, Ca and Mg) and trace elements (Cu, Zn and Mn) were determined in tomatoes grown organically in East Georgia, Marneuli District. The contents of minerals and Mn seem to be in the range as shown in literature. Cu and Zn were found in considerably high amounts in comparison to maximum permissible values established in Georgia. Some correlations were observed between the minerals and trace elements studied. K and Mg were strongly correlated with Cu and Zn. Statistically significant difference have shown also P, K and Mg based between period of sampling.

  13. Transformation of bulk alloys to oxide nanowires

    Science.gov (United States)

    Lei, Danni; Benson, Jim; Magasinski, Alexandre; Berdichevsky, Gene; Yushin, Gleb

    2017-01-01

    One dimensional (1D) nanostructures offer prospects for enhancing the electrical, thermal, and mechanical properties of a broad range of functional materials and composites, but their synthesis methods are typically elaborate and expensive. We demonstrate a direct transformation of bulk materials into nanowires under ambient conditions without the use of catalysts or any external stimuli. The nanowires form via minimization of strain energy at the boundary of a chemical reaction front. We show the transformation of multimicrometer-sized particles of aluminum or magnesium alloys into alkoxide nanowires of tunable dimensions, which are converted into oxide nanowires upon heating in air. Fabricated separators based on aluminum oxide nanowires enhanced the safety and rate capabilities of lithium-ion batteries. The reported approach allows ultralow-cost scalable synthesis of 1D materials and membranes.

  14. Organic hybrid planar-nanocrystalline bulk heterojunctions

    Science.gov (United States)

    Forrest, Stephen R [Ann Arbor, MI; Yang, Fan [Piscataway, NJ

    2011-03-01

    A photosensitive optoelectronic device having an improved hybrid planar bulk heterojunction includes a plurality of photoconductive materials disposed between the anode and the cathode. The photoconductive materials include a first continuous layer of donor material and a second continuous layer of acceptor material. A first network of donor material or materials extends from the first continuous layer toward the second continuous layer, providing continuous pathways for conduction of holes to the first continuous layer. A second network of acceptor material or materials extends from the second continuous layer toward the first continuous layer, providing continuous pathways for conduction of electrons to the second continuous layer. The first network and the second network are interlaced with each other. At least one other photoconductive material is interspersed between the interlaced networks. This other photoconductive material or materials has an absorption spectra different from the donor and acceptor materials.

  15. Bulk nanoscale materials in steel products

    International Nuclear Information System (INIS)

    Chehab, B; Wang, X; Masse, J-P; Zurob, H; Embury, D; Bouaziz, O

    2010-01-01

    Although a number of nanoscale metallic materials exhibit interesting mechanical properties the fabrication paths are often complex and difficult to apply to bulk structural materials. However a number of steels which exhibit combinations of plasticity and phase transitions can be deformed to produce ultra high strength levels in the range 1 to 3 GPa. The resultant high stored energy and complex microstructures allow new nanoscale structures to be produced by combinations of recovery and recrystallisation. The resultant structures exhibit totally new combinations of strength and ductility to be achieved. In specific cases this also enables both the nature of the grain boundary structure and the spatial variation in structure to be controlled. In this presentation both the detailed microstructural features and their relation to the strength, work-hardening capacity and ductility will be discussed for a number of martensitic and austenitic steels.

  16. Tuneable film bulk acoustic wave resonators

    CERN Document Server

    Gevorgian, Spartak Sh; Vorobiev, Andrei K

    2013-01-01

    To handle many standards and ever increasing bandwidth requirements, large number of filters and switches are used in transceivers of modern wireless communications systems. It makes the cost, performance, form factor, and power consumption of these systems, including cellular phones, critical issues. At present, the fixed frequency filter banks based on Film Bulk Acoustic Resonators (FBAR) are regarded as one of the most promising technologies to address performance -form factor-cost issues. Even though the FBARs improve the overall performances the complexity of these systems remains high.  Attempts are being made to exclude some of the filters by bringing the digital signal processing (including channel selection) as close to the antennas as possible. However handling the increased interference levels is unrealistic for low-cost battery operated radios. Replacing fixed frequency filter banks by one tuneable filter is the most desired and widely considered scenario. As an example, development of the softwa...

  17. Criticality in Bulk Metallic Glass Constituent Elements

    Science.gov (United States)

    Mota, Rodrigo Miguel Ojeda; Graedel, T. E.; Pekarskaya, Evgenia; Schroers, Jan

    2017-11-01

    Bulk metallic glasses (BMGs), which readily form amorphous phases during solidification, are increasingly being used in first applications of watch components, electronic casings, and sporting goods. The compositions of BMGs typically include four to six elements. Various political and geological factors have recently led to supply disruptions for several metals, including some present in BMG compositions. In this work, we assess the "criticality" of 22 technologically interesting BMG compositions, compare the results with those for three common engineering alloy groups, and derive recommendations for BMG composition choices from a criticality perspective. The criticality of BMGs is found to be generally much higher compared with those for the established engineering alloys. Therefore, criticality concerns should also be considered in the choice between existing and developing novel BMGs.

  18. Solid state properties from bulk to nano

    CERN Document Server

    Dresselhaus, Mildred; Cronin, Stephen; Gomes Souza Filho, Antonio

    2018-01-01

    This book fills a gap between many of the basic solid state physics and materials science books that are currently available. It is written for a mixed audience of electrical engineering and applied physics students who have some knowledge of elementary undergraduate quantum mechanics and statistical mechanics. This book, based on a successful course taught at MIT, is divided pedagogically into three parts: (I) Electronic Structure, (II) Transport Properties, and (III) Optical Properties. Each topic is explained in the context of bulk materials and then extended to low-dimensional materials where applicable. Problem sets review the content of each chapter to help students to understand the material described in each of the chapters more deeply and to prepare them to master the next chapters.

  19. A route to transparent bulk metals

    KAUST Repository

    Schwingenschlögl, Udo

    2012-07-23

    Hypothetical compounds based on a sapphire host are investigated with respect to their structural as well as electronic features. The results are obtained by electronic structure calculations within density functional theory and the generalized gradient approximation. A quarter of the Al atoms in Al 2O 3 is replaced by a 4d transition metal M ion, with d 0 to d 9 electronic configuration. We perform structure optimizations for all the compounds and analyze the electronic states. Due to the sizeable band gap of the Al 2O 3 host, we can identify promising candidates for transparent bulk metals. We explain the mechanisms leading to this combination of materials properties. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Mechanical reliability of bulk high Tc superconductors

    International Nuclear Information System (INIS)

    Freiman, S.W.

    1990-01-01

    Most prospective applications for high T c superconductors in bulk form, e.g. magnets, motors, will require appreciable mechanical strength. Work at NIST [National Institute of Standards and Technology] has begun to address issues related to mechanical reliability. For example, recent studies on Ba-Y-Cu-O have shown that the intrinsic crack growth resistance, K IC , of crystals of this material is even smaller than was first reported, less than that of window glass, and is sensitive to moisture. Processing conditions, particularly sintering and annealing atmosphere, have been shown to have a major influence on microstructure and internal stresses in the material. Large internal stresses result from the tetragonal to orthorhombic phase transformation as well as the thermal expansion anisotropy in the grains of the ceramic. Because stress relief is absent, microcracks form which have a profound influence on strength

  1. On bulk viscosity and moduli decay

    International Nuclear Information System (INIS)

    Laine, Mikko

    2010-01-01

    This pedagogically intended lecture, one of four under the header 'Basics of thermal QCD', reviews an interesting relationship, originally pointed out by Boedeker, that exists between the bulk viscosity of Yang-Mills theory (of possible relevance to the hydrodynamics of heavy ion collision experiments) and the decay rate of scalar fields coupled very weakly to a heat bath (appearing in some particle physics inspired cosmological scenarios). This topic serves, furthermore, as a platform on which a number of generic thermal field theory concepts are illustrated. The other three lectures (on the QCD equation of state and the rates of elastic as well as inelastic processes experienced by heavy quarks) are recapitulated in brief encyclopedic form. (author)

  2. Bulk disk resonator based ultrasensitive mass sensor

    DEFF Research Database (Denmark)

    Cagliani, Alberto; Davis, Zachary James

    2009-01-01

    range. The sensor has been characterized in terms of sensitivity both for distributed mass detection, performing six consecutive depositions of e-beam evaporated Au, and localized mass detection, depositing approximately 7.5 pg of Pt/Ga/C three times consecutively with a Focused Ion Beam system......In the framework of developing an innovative label-free sensor for multiarrayed biodetection applications, we present a novel bulk resonator based mass sensor. The sensor is a polysilicon disk which shows a Q-factor of 6400 in air at 68.8 MHz, resulting in mass resolutions down in the femtogram....... The sensor has an extremely high distributed mass to frequency shift sensitivity of 60104 Hzcm2/¿g and shows a localized mass to frequency sensitivity up to 4405 Hz/pg with a localized mass resolution down to 15 fg. The device has been fabricated with a new microfabrication process that uses only two...

  3. Locality, bulk equations of motion and the conformal bootstrap

    Energy Technology Data Exchange (ETDEWEB)

    Kabat, Daniel [Department of Physics and Astronomy, Lehman College, City University of New York,250 Bedford Park Blvd. W, Bronx NY 10468 (United States); Lifschytz, Gilad [Department of Mathematics, Faculty of Natural Science, University of Haifa,199 Aba Khoushy Ave., Haifa 31905 (Israel)

    2016-10-18

    We develop an approach to construct local bulk operators in a CFT to order 1/N{sup 2}. Since 4-point functions are not fixed by conformal invariance we use the OPE to categorize possible forms for a bulk operator. Using previous results on 3-point functions we construct a local bulk operator in each OPE channel. We then impose the condition that the bulk operators constructed in different channels agree, and hence give rise to a well-defined bulk operator. We refer to this condition as the “bulk bootstrap.” We argue and explicitly show in some examples that the bulk bootstrap leads to some of the same results as the regular conformal bootstrap. In fact the bulk bootstrap provides an easier way to determine some CFT data, since it does not require knowing the form of the conformal blocks. This analysis clarifies previous results on the relation between bulk locality and the bootstrap for theories with a 1/N expansion, and it identifies a simple and direct way in which OPE coefficients and anomalous dimensions determine the bulk equations of motion to order 1/N{sup 2}.

  4. Effects of seed geometry on the crystal growth and the magnetic properties of single grain REBCO bulk superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hwi Joo; Lee, Hee Gyoun [Korea Polytechnic University, Siheung (Korea, Republic of); Park, Soon Dong; Jun, Bung Hyack; Kim, Chan Joong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2017-09-15

    This study presents that the orientation and the geometry of seed affect on the growth behavior of melt processed single grain REBCO bulk superconductor and its magnetic properties. The effects of seed geometry have been investigated for thin 30mm x 30mm rectangular powder compacts. Single grain REBCO bulk superconductors have been grown successfully by a top seed melt growth method for 8-mm thick vertical thin REBCO slab. Asymmetric structures have been developed at the front surface and at the rear surface of the specimen. Higher magnetic properties have been obtained for the specimen that c-axis is normal to the specimen surface. The relationships between microstructure, grain growth and magnetic properties have been discussed.

  5. Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness

    Science.gov (United States)

    1981-06-01

    The process development continued, with a total of nine crystal growth runs. One of these was a 150 kg run of 5 crystals of approximately 30 kg each. Several machine and process problems were corrected and the 150 kg run was as successful as previous long runs on CG2000 RC's. The accelerated recharge and growth will be attempted when the development program resumes at full capacity in FY '82. The automation controls (Automatic Grower Light Computer System) were integrated to the seed dip temperature, shoulder, and diameter sensors on the CG2000 RC development grower. Test growths included four crystals, which were grown by the computer/sensor system from seed dip through tail off. This system will be integrated on the Mod CG2000 grower during the next quarter. The analytical task included the completion and preliminary testing of the gas chromatograph portion of the Furnace Atmosphere Analysis System. The system can detect CO concentrations and will be expanded to oxygen and water analysis in FY '82.

  6. Structural characterization of epitaxial LiFe_5O_8 thin films grown by chemical vapor deposition

    International Nuclear Information System (INIS)

    Loukya, B.; Negi, D.S.; Sahu, R.; Pachauri, N.; Gupta, A.; Datta, R.

    2016-01-01

    We report on detailed microstructural and atomic ordering characterization by transmission electron microscopy in epitaxial LiFe_5O_8 (LFO) thin films grown by chemical vapor deposition (CVD) on MgO (001) substrates. The experimental results of LFO thin films are compared with those for bulk LFO single crystal. Electron diffraction studies indicate weak long-range ordering in LFO (α-phase) thin films in comparison to bulk crystal where strong ordering is observed in optimally annealed samples. The degree of long-range ordering depends on the growth conditions and the thickness of the film. Annealing experiment along with diffraction study confirms the formation of α-Fe_2O_3 phase in some regions of the films. This suggests that under certain growth conditions γ-Fe_2O_3-like phase forms in some pockets in the as-grown LFO thin films that then convert to α-Fe_2O_3 on annealing. - Highlights: • Atomic ordering in LiFe_5O_8 bulk single crystal and epitaxial thin films. • Electron diffraction studies reveal different level of ordering in the system. • Formation of γ-Fe_2O_3 like phase has been observed.

  7. Spectroscopic ellipsometry study of Cu2ZnSnSe4 bulk crystals

    International Nuclear Information System (INIS)

    León, M.; Lopez, N.; Merino, J. M.; Caballero, R.; Levcenko, S.; Gurieva, G.; Serna, R.; Bodnar, I. V.; Nateprov, A.; Guc, M.; Arushanov, E.; Schorr, S.; Perez-Rodriguez, A.

    2014-01-01

    Using spectroscopic ellipsometry we investigated and analyzed the pseudo-optical constants of Cu 2 ZnSnSe 4 bulk crystals, grown by the Bridgman method, over 0.8–4.5 eV photon energy range. The structures found in the spectra of the complex pseudodielectric functions were associated to E 0 , E 1A , and E 1B interband transitions and were analyzed in frame of the Adachi's model. The interband transition parameters such as strength, threshold energy, and broadening were evaluated by using the simulated annealing algorithm. In addition, the pseudo-complex refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity were derived over 0.8–4.5 eV photon energy range

  8. Spectroscopic ellipsometry study of Cu{sub 2}ZnSnSe{sub 4} bulk crystals

    Energy Technology Data Exchange (ETDEWEB)

    León, M., E-mail: maximo.leon@uam.es; Lopez, N.; Merino, J. M.; Caballero, R. [Department of Applied Physics M12, Universidad Autónoma de Madrid, Madrid (Spain); Levcenko, S.; Gurieva, G. [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Berlin (Germany); Serna, R. [Laser Processing Group, Instituto de Optica, CSIC, Serrano 121, 28006 Madrid (Spain); Bodnar, I. V. [Department of Chemistry, Belarusian State University of Informatics and Radioelectronics, Minsk (Belarus); Nateprov, A.; Guc, M.; Arushanov, E. [Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau MD 2028 (Moldova, Republic of); Schorr, S. [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Berlin (Germany); Institute of Geological Sciences, Free University Berlin, Malteserstr. 74-100, Berlin (Germany); Perez-Rodriguez, A. [IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, 08930 Sant Adrià del Besòs (Barcelona) (Spain); IN2UB, Departament d' Electrònica, Universitat de Barcelona, Martí i Franquès 1, 08028 Barcelona (Spain)

    2014-08-11

    Using spectroscopic ellipsometry we investigated and analyzed the pseudo-optical constants of Cu{sub 2}ZnSnSe{sub 4} bulk crystals, grown by the Bridgman method, over 0.8–4.5 eV photon energy range. The structures found in the spectra of the complex pseudodielectric functions were associated to E{sub 0}, E{sub 1A}, and E{sub 1B} interband transitions and were analyzed in frame of the Adachi's model. The interband transition parameters such as strength, threshold energy, and broadening were evaluated by using the simulated annealing algorithm. In addition, the pseudo-complex refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity were derived over 0.8–4.5 eV photon energy range.

  9. Bulk temperature measurement in thermally striped pipe flows

    International Nuclear Information System (INIS)

    Lemure, N.; Olvera, J.R.; Ruggles, A.E.

    1995-12-01

    The hot leg flows in some Pressurized Water Reactor (PWR) designs have a temperature distribution across the pipe cross-section. This condition is often referred to as a thermally striped flow. Here, the bulk temperature measurement of pipe flows with thermal striping is explored. An experiment is conducted to examine the feasibility of using temperature measurements on the external surface of the pipe to estimate the bulk temperature of the flow. Simple mixing models are used to characterize the development of the temperature profile in the flow. Simple averaging techniques and Backward Propagating Neural Net are used to predict bulk temperature from the external temperature measurements. Accurate bulk temperatures can be predicted. However, some temperature distributions in the flow effectively mask the bulk temperature from the wall and cause significant error in the bulk temperature predicted using this technique

  10. A CFT perspective on gravitational dressing and bulk locality

    Energy Technology Data Exchange (ETDEWEB)

    Lewkowycz, Aitor; Turiaci, Gustavo J. [Physics Department, Princeton University,Princeton, NJ 08544 (United States); Verlinde, Herman [Physics Department, Princeton University,Princeton, NJ 08544 (United States); Princeton Center for Theoretical Science, Princeton University,Princeton, NJ 08544 (United States)

    2017-01-02

    We revisit the construction of local bulk operators in AdS/CFT with special focus on gravitational dressing and its consequences for bulk locality. Specializing to 2+1-dimensions, we investigate these issues via the proposed identification between bulk operators and cross-cap boundary states. We obtain explicit expressions for correlation functions of bulk fields with boundary stress tensor insertions, and find that they are free of non-local branch cuts but do have non-local poles. We recover the HKLL recipe for restoring bulk locality for interacting fields as the outcome of a natural CFT crossing condition. We show that, in a suitable gauge, the cross-cap states solve the bulk wave equation for general background geometries, and satisfy a conformal Ward identity analogous to a soft graviton theorem. Virasoro symmetry, the large N conformal bootstrap and the uniformization theorem all play a key role in our derivations.

  11. Tissue grown in space in NASA Bioreactor

    Science.gov (United States)

    2001-01-01

    Dr. Lisa E. Freed of the Massachusetts Institute of Technology and her colleagues have reported that initially disc-like specimens tend to become spherical in space, demonstrating that tissues can grow and differentiate into distinct structures in microgravity. The Mir Increment 3 (Sept. 16, 1996 - Jan. 22, 1997) samples were smaller, more spherical, and mechanically weaker than Earth-grown control samples. These results demonstrate the feasibility of microgravity tissue engineering and may have implications for long human space voyages and for treating musculoskeletal disorders on earth. Final samples from Mir and Earth appeared histologically cartilaginous throughout their entire cross sections (5-8 mm thick), with the exception of fibrous outer capsules. Constructs grown on Earth (A) appeared to have a more organized extracellular matrix with more uniform collagen orientation as compared with constructs grown on Mir (B), but the average collagen fiber diameter was similar in the two groups (22 +- 2 nm) and comparable to that previously reported for developing articular cartilage. Randomly oriented collagen in Mir samples would be consistent with previous reports that microgravity disrupts fibrillogenesis. These are transmission electron micrographs of constructs from Mir (A) and Earth (B) groups at magnifications of x3,500 and x120,000 (Inset). The work is sponsored by NASA's Office of Biological and Physical Research. The bioreactor is managed by the Biotechnology Cell Science Program at NASA's Johnson Space Center (JSC). NASA-sponsored bioreactor research has been instrumental in helping scientists to better understand normal and cancerous tissue development. In cooperation with the medical community, the bioreactor design is being used to prepare better models of human colon, prostate, breast and ovarian tumors. Credit: Proceedings of the National Academy of Sciences.

  12. Bulk glass formation and crystallization in zirconium based bulk metallic glass forming alloys

    International Nuclear Information System (INIS)

    Savalia, R.T.; Neogy, S.; Dey, G.K.; Banerjee, S.

    2002-01-01

    The microstructures of Zr based metallic glasses produced in bulk form have been described in the as-cast condition and after crystallization. Various microscopic techniques have been used to characterize the microstructures. The microstructure in the as-cast condition was found to contain isolated crystals and crystalline aggregates embedded in the amorphous matrix. Quenched-in nuclei of crystalline phases were found to be present in fully amorphous regions. These glasses after crystallization gave rise to nanocrystalline solids. (author)

  13. 75 FR 34573 - Bulk Solid Hazardous Materials: Harmonization With the International Maritime Solid Bulk Cargoes...

    Science.gov (United States)

    2010-06-17

    ... reduced iron (DRI) as briquettes molded at a temperature of 650 [deg]C or higher that have a density of 5... temperature of 650 [deg]C or higher or had a density of 5.0 g/cm[sup3] or greater. In this proposed rule, we... bulk materials of Hazard Classes 4 through 9. c. One comment recommended that a DCM be required for...

  14. Curing characteristics of flowable and sculptable bulk-fill composites

    OpenAIRE

    Miletic, Vesna; Pongpruenska, Pong; De Munck, Jan; Brooks, Neil R; Van Meerbeek, Bart

    2016-01-01

    OBJECTIVES: The aim of this study was to determine and correlate the degree of conversion (DC) with Vickers hardness (VH) and translucency parameter (TP) with the depth of cure (DoC) of five bulk-fill composites. MATERIALS AND METHODS: Six specimens per group, consisting of Tetric EvoCeram Bulk Fill ("TEC Bulk," Ivoclar Vivadent), SonicFill (Kerr), SDR Smart Dentin Replacement ("SDR," Dentsply), Xenius base ("Xenius," StickTech; commercialized as EverX Posterior, GC), Filtek Bul...

  15. Theory of bulk-surface coupling in topological insulator films

    Science.gov (United States)

    Saha, Kush; Garate, Ion

    2014-12-01

    We present a quantitative microscopic theory of the disorder- and phonon-induced coupling between surface and bulk states in doped topological insulator films. We find a simple mathematical structure for the surface-to-bulk scattering matrix elements and confirm the importance of bulk-surface coupling in transport and photoemission experiments, assessing its dependence on temperature, carrier density, film thickness, and particle-hole asymmetry.

  16. Localization of bulk form fields on dilatonic domain walls

    International Nuclear Information System (INIS)

    Youm, Donam

    2001-06-01

    We study the localization properties of bulk form potentials on dilatonic domain walls. We find that bulk form potentials of any ranks can be localized as form potentials of the same ranks or one lower ranks, for any values of the dilaton coupling parameter. For large enough values of the dilaton coupling parameter, bulk form potentials of any ranks can be localized as form potentials of both the same ranks and one lower ranks. (author)

  17. Photoelectron spectroscopy bulk and surface electronic structures

    CERN Document Server

    Suga, Shigemasa

    2014-01-01

    Photoelectron spectroscopy is now becoming more and more required to investigate electronic structures of various solid materials in the bulk, on surfaces as well as at buried interfaces. The energy resolution was much improved in the last decade down to 1 meV in the low photon energy region. Now this technique is available from a few eV up to 10 keV by use of lasers, electron cyclotron resonance lamps in addition to synchrotron radiation and X-ray tubes. High resolution angle resolved photoelectron spectroscopy (ARPES) is now widely applied to band mapping of materials. It attracts a wide attention from both fundamental science and material engineering. Studies of the dynamics of excited states are feasible by time of flight spectroscopy with fully utilizing the pulse structures of synchrotron radiation as well as lasers including the free electron lasers (FEL). Spin resolved studies also made dramatic progress by using higher efficiency spin detectors and two dimensional spin detectors. Polarization depend...

  18. Fault current limiter using bulk oxides superconductors

    International Nuclear Information System (INIS)

    Belmont, O.; Ferracci, P.; Porcar, L.; Barbut, J.M.; Tixador, P.; Noudem, J.G.; Bourgault, D.; Tournier, R.

    1998-01-01

    We study the limitation possibilities of bulk Bi high T c materials. For this we test these materials with AC or DC currents above their critical currents. We study particularly the evolution of the voltage with time or with current. The material, the value of the current and the time duration play important parts. For sintered Bi samples the voltage depends only on the current even for values much larger than the critical current. With textured samples the V(I) curves shows an hysteretic behaviour due to a warming up. The textured materials are more interesting than sintered ones in terms of required volume for the current limitation. In both cases the superconductors are in a dissipative state but not in the normal state. This state is nevertheless reached if the dissipated energy inside the sample is sufficient. We have tried to apply a magnetic field on the samples in order to trigger a more effective limitation. The voltage increases but with a limited effect for currents much higher (3-4 times) than the critical zero field current. We think that the dissipative state is due mainly to the grain boundaries which become resistive above the critical current. (orig.)

  19. Thermodynamic properties of bulk and confined water

    Energy Technology Data Exchange (ETDEWEB)

    Mallamace, Francesco, E-mail: francesco.mallamace@unime.it [Dipartimento di Fisica e Scienza della Terra Università di Messina and CNISM, I-98168 Messina (Italy); Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Center for Polymer Studies and Department of Physics, Boston University, Boston, Massachusetts 02215 (United States); Corsaro, Carmelo [Dipartimento di Fisica e Scienza della Terra Università di Messina and CNISM, I-98168 Messina (Italy); Mallamace, Domenico [Dipartimento di Scienze dell' Ambiente, della Sicurezza, del Territorio, degli Alimenti e della Salute, Università di Messina, I-98166 Messina (Italy); Vasi, Sebastiano; Vasi, Cirino [IPCF-CNR, I-98166 Messina (Italy); Stanley, H. Eugene [Center for Polymer Studies and Department of Physics, Boston University, Boston, Massachusetts 02215 (United States)

    2014-11-14

    The thermodynamic response functions of water display anomalous behaviors. We study these anomalous behaviors in bulk and confined water. We use nuclear magnetic resonance (NMR) to examine the configurational specific heat and the transport parameters in both the thermal stable and the metastable supercooled phases. The data we obtain suggest that there is a behavior common to both phases: that the dynamics of water exhibit two singular temperatures belonging to the supercooled and the stable phase, respectively. One is the dynamic fragile-to-strong crossover temperature (T{sub L} ≃ 225 K). The second, T{sup *} ∼ 315 ± 5 K, is a special locus of the isothermal compressibility K{sub T}(T, P) and the thermal expansion coefficient α{sub P}(T, P) in the P–T plane. In the case of water confined inside a protein, we observe that these two temperatures mark, respectively, the onset of protein flexibility from its low temperature glass state (T{sub L}) and the onset of the unfolding process (T{sup *})

  20. Studies of bulk heterojunction solar cells

    Science.gov (United States)

    Cossel, Raquel; McIntyre, Max; Tzolov, Marian

    We are studying bulk heterojunction solar cells that were fabricated using a mixture of PCPDTBT and PCBM­C60. The impedance data of the cells in dark responded like a simple RC circuit. The value of the dielectric constant derived from these results is consistent with the values reported in the literature for these materials. We are showing that the parallel resistance in the equivalent circuit of linear lump elements can be interpreted using the DC current­voltage measurements. The impedance spectra under light illumination indicated the existence of additional polarization. This extra feature can be described by a model that includes a series RC circuit in parallel with the equivalent circuit for a device in dark. The physical interpretation of the additional polarization is based on photo­generated charges getting trapped in wells, which have a characteristic relaxation time corresponding to the observed break frequency in the impedance spectra. We have studied the influence of the anode and cathode interface on this phenomena, either by using different interface materials, or by depositing the metal electrode while the substate is heated.

  1. Bulk water freezing dynamics on superhydrophobic surfaces

    Science.gov (United States)

    Chavan, S.; Carpenter, J.; Nallapaneni, M.; Chen, J. Y.; Miljkovic, N.

    2017-01-01

    In this study, we elucidate the mechanisms governing the heat-transfer mediated, non-thermodynamic limited, freezing delay on non-wetting surfaces for a variety of characteristic length scales, Lc (volume/surface area, 3 mm commercial superhydrophobic spray coatings, showing a monotonic increase in freezing time with coating thickness. The added thermal resistance of thicker coatings was much larger than that of the nanoscale superhydrophobic features, which reduced the droplet heat transfer and increased the total freezing time. Transient finite element method heat transfer simulations of the water slab freezing process were performed to calculate the overall heat transfer coefficient at the substrate-water/ice interface during freezing, and shown to be in the range of 1-2.5 kW/m2K for these experiments. The results shown here suggest that in order to exploit the heat-transfer mediated freezing delay, thicker superhydrophobic coatings must be deposited on the surface, where the coating resistance is comparable to the bulk water/ice conduction resistance.

  2. Calcium Isotopic Composition of Bulk Silicate Earth

    Science.gov (United States)

    Kang, J.; Ionov, D. A.; Liu, F.; Zhang, C.; Zhang, Z.; Huang, F.

    2016-12-01

    Ca isotopes are used to study the accretion history of the Earth and terrestrial planets, but, Ca isotopic composition of the Bulk Silicate Earth (BSE) remains poorly constrained [1]. To better understand the Ca isotopic composition of BSE, we analyzed 22 well studied peridotite xenoliths from Tariat (Mongolia), Vitim (southern Siberia) and Udachnaya (Siberian Craton). These samples include both fertile and highly depleted garnet and spinel peridotites that show no or only minor post-melting metasomatism or alteration. Ca isotope measurements were done on a Triton-TIMS using double spike method at the Guangzhou Institute of Geochemistry, CAS. The data are reported as δ44/40Ca (relative to NIST SRM 915a). Results for geostandards are consistent with those from other laboratories. 2 standard deviations of SRM 915a analyses are 0.13‰ (n=48). δ44/40Ca of both and fertile and refractory peridotites range from 0.79 to 1.07‰ producing an average of 0.93±0.12‰ (2SD). This value defines the Ca isotopic composition of the BSE, which is consistent with the average δ44/40Ca of oceanic basalts ( 0.90‰)[2,3]. [1] Huang et al (2010) EPSL 292; [2] Valdes et al (2014) EPSL 394; [3]DePaolo (2004) RMG 55.

  3. Bulk monocrystal growth, optical, dielectric, third order nonlinear, thermal and mechanical studies on HCl added L-alanine: An organic NLO material

    Energy Technology Data Exchange (ETDEWEB)

    Shkir, Mohd, E-mail: shkirphysics@gmail.com [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Physics Department, Faculty of Science, King Khalid University, Abha (Saudi Arabia); Yahia, I.S., E-mail: dr_isyahia@yahoo.com [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Physics Department, Faculty of Science, King Khalid University, Abha (Saudi Arabia); Nano-Science & Semiconductor Labs, Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Al-Qahtani, A.M.A. [Advanced Functional Materials & Optoelectronic Laboratory (AFMOL), Physics Department, Faculty of Science, King Khalid University, Abha (Saudi Arabia)

    2016-12-01

    In the current work, good quality bulk size (∼32 mm × 23 mm × 10 mm) single crystals of HCl added L-alanine with well-defined morphology are successfully grown using slow evaporation technique. Crystal structure and other structural parameters were evaluated from X-ray diffraction data. Vibrational assessment of the grown crystal was done by FT-Raman analysis. The presence of chlorine and good quality of the grown crystal was confirmed by SEM/EDX analysis. Solid state UV–Vis–NIR diffused reflectance was measured and direct and indirect optical band gap was calculated using Kubelka-Munk relation and found to be 5.64 and 5 eV respectively. Dielectric measurement was carried out in high frequency range. Third order nonlinear optical susceptibility value was found to be enhanced from 1.91 × 10{sup −6} (pure) to 8.6 × 10{sup −6} esu (LAHCl). Good thermal stability of grown crystals was confirmed from DSC analysis. The enhancement in mechanical strength and crystalline perfection was also observed. - Highlights: • Bulk size (32 mm × 23 mm × 10 mm), good crystalline perfection HCl added L-alanine monocrystal is grown. • The shift in X-ray diffraction and vibrational peaks confirms the interaction of HCl. • The high optical transparency and band gap confirms its application in optoelectronic devices. • Third order NLO properties are found to be enhanced in HCl added L-alanine crystals. • The mechanical strength of the grown crystals is found to be enhanced due HCl addition.

  4. Phytochemical phenolics in organically grown vegetables.

    Science.gov (United States)

    Young, Janice E; Zhao, Xin; Carey, Edward E; Welti, Ruth; Yang, Shie-Shien; Wang, Weiqun

    2005-12-01

    Fruit and vegetable intake is inversely correlated with risks for several chronic diseases in humans. Phytochemicals, and in particular, phenolic compounds, present in plant foods may be partly responsible for these health benefits through a variety of mechanisms. Since environmental factors play a role in a plant's production of secondary metabolites, it was hypothesized that an organic agricultural production system would increase phenolic levels. Cultivars of leaf lettuce, collards, and pac choi were grown either on organically certified plots or on adjacent conventional plots. Nine prominent phenolic agents were quantified by HPLC, including phenolic acids (e. g. caffeic acid and gallic acid) and aglycone or glycoside flavonoids (e. g. apigenin, kaempferol, luteolin, and quercetin). Statistically, we did not find significant higher levels of phenolic agents in lettuce and collard samples grown organically. The total phenolic content of organic pac choi samples as measured by the Folin-Ciocalteu assay, however, was significantly higher than conventional samples (p lettuce and collards, the organic system provided an increased opportunity for insect attack, resulting in a higher level of total phenolic agents in pac choi.

  5. The single-phase multiferroic oxides: from bulk to thin film

    International Nuclear Information System (INIS)

    Prellier, W; Singh, M P; Murugavel, P

    2005-01-01

    Complex perovskite oxides exhibit a rich spectrum of properties, including magnetism, ferroelectricity, strongly correlated electron behaviour, superconductivity and magnetoresistance, which have been research areas of great interest among the scientific and technological community for decades. There exist very few materials which exhibit multiple functional properties; one such class of materials is called the multiferroics. Multiferroics are interesting because they exhibit simultaneously ferromagnetic and ferroelectric polarizations and a coupling between them. Due to the nontrivial lattice coupling between the magnetic and electronic domains (the magnetoelectric effect), the magnetic polarization can be switched by applying an electric field; likewise the ferroelectric polarization can be switched by applying a magnetic field. As a consequence, multiferroics offer rich physics and novel devices concepts, which have recently become of great interest to researchers. In this review article the recent experimental status, for both the bulk single phase and the thin film form, has been presented. Current studies on the ceramic compounds in the bulk form including Bi(Fe,Mn)O 3 , REMnO 3 and the series of REMn 2 O 5 single crystals (RE = rare earth) are discussed in the first section and a detailed overview on multiferroic thin films grown artificially (multilayers and nanocomposites) is presented in the second section. (topical review)

  6. Bulk photovoltaic effect in epitaxial (K, Nb) substituted BiFeO3 thin films

    Science.gov (United States)

    Agarwal, Radhe; Zheng, Fan; Sharma, Yogesh; Hong, Seungbum; Rappe, Andrew; Katiyar, Ram

    We studied the bulk photovoltaic effect in epitaxial (K, Nb) modified BiFeO3 (BKFNO) thin films using theoretical and experimental methods. Epitaxial BKFNO thin films were grown by pulsed laser deposition (PLD). First, we have performed first principles density function theory (DFT) using DFT +U method to calculate electronic band structure, including Hubbard-Ueff (Ueff =U-J) correction into Hamiltonian. The electronic band structure calculations showed a direct band gap at 1.9 eV and a defect level at 1.7 eV (in a 40 atom BKFNO supercell), sufficiently lower in comparison to the experimentally observed values. Furthermore, the piezoforce microscopy (PFM) measurements indicated the presence of striped polydomains in BKFNO thin films. Angle-resolved PFM measurements were also performed to find domain orientation and net polarization directions in these films. The experimental studies of photovoltaic effect in BKNFO films showed a short circuit current of 59 micro amp/cm2 and open circuit voltage of 0.78 V. We compared our experimental results with first principles shift current theory calculations of bulk photovoltaic effect (BPVE).The synergy between theory and experimental results provided a realization of significant role of BPVE in order to understand the photovoltaic mechanism in ferroelectrics.

  7. Crystal growth and characterization of bulk Sb2Te3 topological insulator

    Science.gov (United States)

    Sultana, Rabia; Gurjar, Ganesh; Patnaik, S.; Awana, V. P. S.

    2018-04-01

    The Sb2Te3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850 °C), followed by slow cooling (2 °C/h). As grown Sb2Te3 crystals are analysed for various physical properties by x-ray diffraction (XRD), Raman Spectroscopy, Scanning Electron Microscopy (SEM) coupled with Energy Dispersive x-ray Spectroscopy (EDAX) and electrical measurements under magnetic field (6 Tesla) down to low temperature (2.5 K). The XRD pattern revealed the growth of synthesized Sb2Te3 sample along (00l) plane, whereas the SEM along with EDAX measurements displayed the layered structure with near stoichiometric composition, without foreign contamination. The Raman scattering studies displayed known ({{{{A}}}1{{g}}}1, {{{{E}}}{{g}}}2 and {{{{A}}}1{{g}}}2) vibrational modes for the studied Sb2Te3. The temperature dependent electrical resistivity measurements illustrated the metallic nature of the as grown Sb2Te3 single crystal. Further, the magneto—transport studies represented linear positive magneto-resistance (MR) reaching up to 80% at 2.5 K under an applied field of 6 Tesla. The weak anti localization (WAL) related low field (±2 Tesla) magneto-conductance at low temperatures (2.5 K and 20 K) has been analysed and discussed using the Hikami—Larkin—Nagaoka (HLN) model. Summarily, the short letter reports an easy and versatile method for crystal growth of bulk Sb2Te3 topological insulator (TI) and its brief physical property characterization.

  8. Ultra-fast scintillation properties of β-Ga2O3 single crystals grown by Floating Zone method

    Science.gov (United States)

    He, Nuotian; Tang, Huili; Liu, Bo; Zhu, Zhichao; Li, Qiu; Guo, Chao; Gu, Mu; Xu, Jun; Liu, Jinliang; Xu, Mengxuan; Chen, Liang; Ouyang, Xiaoping

    2018-04-01

    In this investigation, β-Ga2O3 single crystals were grown by the Floating Zone method. At room temperature, the X-ray excited emission spectrum includes ultraviolet and blue emission bands. The scintillation light output is comparable to the commercial BGO scintillator. The scintillation decay times are composed of the dominant ultra-fast component of 0.368 ns and a small amount of slightly slow components of 8.2 and 182 ns. Such fast component is superior to most commercial inorganic scintillators. In contrast to most semiconductor crystals prepared by solution method such as ZnO, β-Ga2O3 single crystals can be grown by traditional melt-growth method. Thus we can easily obtain large bulk crystals and mass production.

  9. Irradiating of Bulk Soybeans: Influence on Their Functional and Sensory Properties for Soyfood Processing

    Science.gov (United States)

    Chia, Chiew-Ling; Wilson, Lester A.; Boylston, Terri; Perchonok, Michele; French, Stephen

    2006-01-01

    Soybeans were chosen for lunar and planetary missions, where soybeans will be supplied in bulk or grown locally, due to their nutritive value and ability to produce oil and protein for further food applications. However, soybeans must be processed into foods prior to consumption. Radiation that soybeans would be exposed to during bulk storage prior to and during a Mars mission may influence their germination and functional properties. The influence of radiation includes the affect of surface pasteurization to ensure the astronauts safety from food-borne illnesses (HACCP, CCP), and the affect of the amount of radiation the soybeans receive during a Mars mission. Decreases in the amount of natural antioxidants free radical formation, and oxidation-induced changes in the soybean will influence the nutritional value, texture, color, and aroma of soyfoods. The objective of this study was to determine the influence of pasteurization and sterilization surface radiation on whole soybeans using gamma and electron beam radiation. The influence of 0, 1, 5, 10, and 30kGy on microbial load, germination rate, ease of processing, and quality of soymilk and tofu were determined. Surface radiation of whole dry soybeans using electron beam or gamma rays from 1-30kGy did provide microbial safety for the astronauts. However, the lower dose levels had surviving yeasts and molds. These doses caused oxidative changes that resulted in soymilk and tofu with rancid aromas. GC-MS of the aroma compounds using SPME Headspace confirmed the presence of lipid oxidation compounds. Soybean germination ability was reduced as radiation dosage increased. While lower doses may reduce these problems, the ability to insure microbial safety of bulk soybeans will be lost. Counter measures could include vacuum packaging, nitrogen flushing, added antioxidants, and radiating under freezing conditions. Doses below 1kGy need to be investigated further to determine the influence of the radiation encountered

  10. Bulk Vitrification Castable Refractory Block Protection Study

    Energy Technology Data Exchange (ETDEWEB)

    Hrma, Pavel R.; Bagaasen, Larry M.; Beck, Andrew E.; Brouns, Thomas M.; Caldwell, Dustin D.; Elliott, Michael L.; Matyas, Josef; Minister, Kevin BC; Schweiger, Michael J.; Strachan, Denis M.; Tinsley, Bronnie P.; Hollenberg, Glenn W.

    2005-05-01

    Bulk vitrification (BV) was selected for a pilot-scale test and demonstration facility for supplemental treatment to accelerate the cleanup of low-activity waste (LAW) at the Hanford U.S. DOE Site. During engineering-scale (ES) tests, a small fraction of radioactive Tc (and Re, its nonradioactive surrogate) were transferred out of the LAW glass feed and molten LAW glass, and deposited on the surface and within the pores of the castable refractory block (CRB). Laboratory experiments were undertaken to understand the mechanisms of the transport Tc/Re into the CRB during vitrification and to evaluate various means of CRB protection against the deposition of leachable Tc/Re. The tests used Re as a chemical surrogate for Tc. The tests with the baseline CRB showed that the molten LAW penetrates into CRB pores before it converts to glass, leaving deposits of sulfates and chlorides when the nitrate components decompose. Na2O from the LAW reacts with the CRB to create a durable glass phase that may contain Tc/Re. Limited data from a single CRB sample taken from an ES experiment indicate that, while a fraction of Tc/Re is present in the CRB in a readily leachable form, most of the Tc/Re deposited in the refractory is retained in the form of a durable glass phase. In addition, the molten salts from the LAW, mainly sulfates, chlorides, and nitrates, begin to evaporate from BV feeds at temperatures below 800 C and condense on solid surfaces at temperatures below 530 C. Three approaches aimed at reducing or preventing the deposition of soluble Tc/Re within the CRB were proposed: metal lining, sealing the CRB surface with a glaze, and lining the CRB with ceramic tiles. Metal liners were deemed unsuitable because evaluations showed that they can cause unacceptable distortions of the electric field in the BV system. Sodium silicate and a low-alkali borosilicate glaze were selected for testing. The glazes slowed down molten salt condensate penetration, but did little to reduce the

  11. Xerophilic mycopopulations of teas in bulk

    Directory of Open Access Journals (Sweden)

    Škrinjar Marija M.

    2011-01-01

    Full Text Available d.o.o., Novi Sad AU Krunić Vesna J. AF EKOLd.o.o., Novi Sad KW teas % mould contamination % thermal treatment KR nema Other the water, tea is the most popular beverage in the world today. They are used for ages, in the beginning as refreshing drinks, and later more for their healing properties. Teas have been demonstrated to show antioxidative, anti-carcinogenic, and anti-microbial properties. Considering that the teas, during the production, are not treated with any temperature, there is high risk for contamination with different type of microorganisms, especially with moulds. Moulds are ubiquitously distributed in nature and their spores can be found in the atmosphere even at high altitudes and under favorable conditions of temperature and humidity, moulds grow on many commodities including cereals, oil seeds, nuts, herbs and spices. Most of them are potential producers of mycotoxins which present a real hazard to human health. The aim of this work was to investigate total mould count and to identify moulds isolated from teas in bulk, than from teas treated with hot, sterile, distilled water and from the tea filtrates. Tested teas were peppermint, sage, yarrow, black tea, bearberry, lemon balm, mixture of teas from Zlatibor. In teas in balk was observed high contamination with different kinds of moulds (1.84-4.55 cfu/g, such as Aspergillus awamori, A. lovaniensis, A niger, A. phoenicus, A. repens, A. restrictus, A. sydowii, A. versicolor, Eurotium amstelodami, E. chevalieri, E. herbariorum, Penicillium chrysogenum, and Scopulariopsis brevicaulis. The most frequent were species from Aspergillus and Eurotium genera. Thermal treatment with hot, sterile, distilled water reduced the number of fungal colonies. Aspergillus awamori was the most resistant and appeared in six samples of filtrates of tea, Aspergillus niger in one sample and Penicillium chrysogenum in one sample.

  12. High trapped fields in bulk YBCO superconductors

    Science.gov (United States)

    Fuchs, Günter; Gruss, Stefan; Krabbes, Gernot; Schätzle, Peter; Verges, Peter; Müller, Karl-Hartmut; Fink, Jörg; Schultz, Ludwig

    The trapped field properties of bulk melt-textured YBCO material were investigated at different temperatures. In the temperature range of liquid nitrogen, maximum trapped fields of 1.1 T were found at 77 K by doping of YBCO with small amounts of zinc. The improved pinning of zinc-doped YBa2Cu3O7-x (YBCO) results in a pronounced peak effect in the field dependence of the critical current density. the trapped field at lower temperatures increases due to the increasing critical current density, however, at temperatures around 50 K cracking of the material is observed which is exposed to considerably tensile stresses due to Lorentz forces. Very high trapped fields up to 14.4 T were achieved at 22.5 K for a YBCO disk pair by the addition of silver improving the tensile strength of YBCO and by using a bandage made of a steel tube. The steel tube produces a compressive stress on YBCO after cooling down from 300 K to the measuring temperature, which is due to the higher coeeficient of thermal expansion of steel compared with that of YBCO in the a,b plane. The application of superconducting permanent magnets with trapped fields of 10 T and more in superconducting bearings would allow to obtain very high levitation pressures up to 2500 N/cm2 which is two orders of magnitude higher than the levitation pressure achievable in superconducting bearings with conventional permanent magnets. The most important problem for the application of superconducting permanent magnets is the magnetizing procedure of the YBCO material. Results of magnetizing YBCO disks by using of pulsed magnetic fields will be presented.

  13. Cavitation instability in bulk metallic glasses

    Directory of Open Access Journals (Sweden)

    Dai L.H.

    2015-01-01

    Full Text Available Recent experiments have shown that fracture surfaces of bulk metallic glasses (BMGs usually exhibit an intriguing nanoscale corrugation like fractographic feature mediated by nanoscale void formation. We attribute the onset of this nanoscale corrugation to TTZs (tension transformation zones mediated cavitation. In our recent study, the spall experiments of Zr-based BMG using a single-stage light gas gun were performed. To uncover the mechanisms of the spallation damage nucleation and evolution, the samples were designed to be subjected to dynamic tensile loadings of identical amplitude but with different durations by making use of the multi-stress pulse and the double-flyer techniques. It is clearly revealed that the macroscopic spall fracture in BMGs originates from the nucleation, growth and coalescence of micro-voids. Then, a microvoid nucleation model of BMGs based on free volume theory is proposed, which indicates that the nucleation of microvoids at the early stage of spallation in BMGs is resulted from diffusion and coalescence of free volume. Furthermore, a theoretical model of void growth in BMGs undergoing remote dynamic hydrostatic tension is developed. The critical condition of cavitation instability is obtained. It is found that dynamic void growth in BMGs can be well controlled by a dimensionless inertial number characterizing the competition between intrinsic and extrinsic time scales. To unveil the atomic-level mechanism of cavitation, a systematic molecular dynamics (MD simulation of spallation behaviour of a binary metallic glass with different impact velocities was performed. It is found that micro-void nucleation is determined TTZs while the growth is controlled by shear transformation zones (STZs at atomic scale.

  14. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Roberts, Joel Glenn [Univ. of California, Berkeley, CA (United States)

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  15. Interfacial, electrical, and spin-injection properties of epitaxial Co2MnGa grown on GaAs(100)

    DEFF Research Database (Denmark)

    Damsgaard, Christian Danvad; Hickey, M. C.; Holmes, S. N.

    2009-01-01

    The interfacial, electrical, and magnetic properties of the Heusler alloy Co2MnGa grown epitaxially on GaAs(100) are presented with an emphasis on the use of this metal-semiconductor combination for a device that operates on the principles of spin-injection between the two materials. Through...... was monitored in situ by reflection high energy electron diffraction and the bulk composition was measured ex situ with inductively coupled plasma optical emission spectroscopy. The Co2MnGa L21 cubic structure is strained below a thickness of 20 nm on GaAs(100) but relaxed in films thicker than 20 nm...

  16. Epitaxially grown zinc-blende structured Mn doped ZnO nanoshell on ZnS nanoparticles

    International Nuclear Information System (INIS)

    Limaye, Mukta V.; Singh, Shashi B.; Date, Sadgopal K.; Gholap, R.S.; Kulkarni, Sulabha K.

    2009-01-01

    Zinc oxide in the bulk as well as in the nanocrystalline form is thermodynamically stable in the wurtzite structure. However, zinc oxide in the zinc-blende structure is more useful than that in the wurtzite structure due to its superior electronic properties as well as possibility of efficient doping. Therefore, zinc oxide shell is grown epitaxially on zinc sulphide core nanoparticles having zinc-blende structure. It is shown that doping of manganese could be achieved in zinc oxide nanoshell with zinc-blende structure

  17. 7 CFR 58.211 - Packaging room for bulk products.

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 3 2010-01-01 2010-01-01 false Packaging room for bulk products. 58.211 Section 58... Service 1 Rooms and Compartments § 58.211 Packaging room for bulk products. A separate room or area shall... dust within the packaging room and where needed, a dust collector shall be provided and properly...

  18. Quantifying Dustiness, Specific Allergens, and Endotoxin in Bulk Soya Imports

    Directory of Open Access Journals (Sweden)

    Howard J. Mason

    2017-11-01

    Full Text Available Soya is an important bulk agricultural product often transported by sea as chipped beans and/or the bean husks after pelletisation. There are proven allergens in both forms. Bulk handling of soya imports can generate air pollution containing dust, allergens, and pyrogens, posing health risks to dockside workers and surrounding populations. Using an International Organization for Standardization (ISO standardised rotating drum dustiness test in seven imported soya bulks, we compared the generated levels of dust and two major soya allergens in three particle sizes related to respiratory health. Extractable levels of allergen and endotoxin from the bulks showed 30–60 fold differences, with levels of one allergen (hydrophobic seed protein and endotoxin higher in husk. The generated levels of dust and allergens in the three particle sizes also showed very wide variations between bulks, with aerolysed levels of allergen influenced by both the inherent dustiness and the extractable allergen in each bulk. Percentage allergen aerolysed from pelletized husk—often assumed to be of low dustiness—after transportation was not lower than that from chipped beans. Thus, not all soya bulks pose the same inhalation health risk and reinforces the importance of controlling dust generation from handling all soya bulk to as low as reasonably practicable.

  19. Bulk photovoltaic effect in an organi c polar crystal

    NARCIS (Netherlands)

    Vijayaraghavan, R.K.; Meskers, S.C.J.; Abdul Rahim, M.; Das, S.

    2014-01-01

    Organic polar crystals from the donor–acceptor substituted 1,4-diphenybutadiene 1 can generate a short-circuit photocurrent and a photovoltage upon illumination with near UV light. The photocurrent and photovoltage are attributed to a bulk photovoltaic effect. The bulk photovoltaic effect has been

  20. Calculation and design for SSRF's bulk shield

    Energy Technology Data Exchange (ETDEWEB)

    Fang, K.M. [Shanghai Institute of Applied Physics, Chinese Academy of Science (China)]. E-mail: fangkm@sinap.ac.cn; Xu, X.J. [Shanghai Institute of Applied Physics, Chinese Academy of Science (China); Cai, J.H. [Shanghai Institute of Applied Physics, Chinese Academy of Science (China)

    2006-12-15

    Shielding design objectives for the SSRF are chosen, assumptions for beam loss rates are given, the methods used on the APS by Moe are summarized and introduced to make calculation and design on bulk shield, the factor of skyshine is also considered, design thicknesses for SSRF's bulk shield are presented.

  1. Effect of Bulk and Interfacial Rheological Properties on Bubble Dissolution

    NARCIS (Netherlands)

    Kloek, W.; Vliet, van T.; Meinders, M.

    2001-01-01

    This paper describes theoretical calculations of the combined effect of bulk and interracial rheological properties on dissolution behavior of a bubble in an infinite medium at saturated conditions. Either bulk or interracial elasticity can stop the bubble dissolution process, and stability criteria

  2. Bulk density and porosity distributions in a compost pile

    NARCIS (Netherlands)

    Ginkel, van J.T.; Raats, P.A.C.; Haneghem, van I.A.

    1999-01-01

    This paper mainly deals with the description of the initial distribution of bulk density and porosity at the moment a compost pile is built or rebuilt. A relationship between bulk density and vertical position in a pile is deduced from theoretical and empirical considerations. Formulae to calculate

  3. Role of bulking agents in bladder exstrophyepispadias complexes ...

    African Journals Online (AJOL)

    Background: Role of pelvic osteotomy in surgical management of bladder exstrophy is controversial But pelvic rim closure importantly. Bulking agents have been used for perineal and pelvic dysfunction in adults. In this study, bladder extrophy repair was performed without pubic closure And bulking agent injections were ...

  4. Bulk and edge spin transport in topological magnon insulators

    NARCIS (Netherlands)

    Rückriegel, A.; Brataas, A.; Duine, R.A.

    2018-01-01

    We investigate the spin transport properties of a topological magnon insulator, a magnetic insulator characterized by topologically nontrivial bulk magnon bands and protected magnon edge modes located in the bulk band gaps. Employing the Landau-Lifshitz-Gilbert phenomenology, we calculate the spin

  5. Influence of bulk dielectric polarization upon PD transients

    DEFF Research Database (Denmark)

    Pedersen, Aage; Crichton, George C; McAllister, Iain Wilson

    1995-01-01

    associated with the actual space charge in the void, and one related to changes in the bulk polarization brought about by changes in the field external to the void due to this space charge. The magnitude of the induced charge and its components are discussed in relation to a heterogeneous bulk dielectric...

  6. 77 FR 12293 - PCBs Bulk Product v. Remediation Waste

    Science.gov (United States)

    2012-02-29

    .... Remediation Waste AGENCY: Environmental Protection Agency (EPA). ACTION: Request for Public Comment. SUMMARY... biphenyl (PCB) disposal regulations regarding PCB bulk product and PCB remediation waste. The proposed... regarding PCB bulk product and PCB remediation waste under regulations promulgated at 40 CFR part 761. The...

  7. Bulk viscosity of spin-one color superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Sa' d, Basil A.

    2009-08-27

    The bulk viscosity of several quark matter phases is calculated. It is found that the effect of color superconductivity is not trivial, it may suppress, or enhance the bulk viscosity depending on the critical temperature and the temperature at which the bulk viscosity is calculated. Also, is it found that the effect of neutrino-emitting Urca processes cannot be neglected in the consideration of the bulk viscosity of strange quark matter. The results for the bulk viscosity of strange quark matter are used to calculate the r-mode instability window of quark stars with several possible phases. It is shown that each possible phase has a different structure for the r-mode instability window. (orig.)

  8. Renormalization group approach to causal bulk viscous cosmological models

    International Nuclear Information System (INIS)

    Belinchon, J A; Harko, T; Mak, M K

    2002-01-01

    The renormalization group method is applied to the study of homogeneous and flat Friedmann-Robertson-Walker type universes, filled with a causal bulk viscous cosmological fluid. The starting point of the study is the consideration of the scaling properties of the gravitational field equations, the causal evolution equation of the bulk viscous pressure and the equations of state. The requirement of scale invariance imposes strong constraints on the temporal evolution of the bulk viscosity coefficient, temperature and relaxation time, thus leading to the possibility of obtaining the bulk viscosity coefficient-energy density dependence. For a cosmological model with bulk viscosity coefficient proportional to the Hubble parameter, we perform the analysis of the renormalization group flow around the scale-invariant fixed point, thereby obtaining the long-time behaviour of the scale factor

  9. Bulk velocity extraction for nano-scale Newtonian flows

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Wenfei, E-mail: zwenfei@gmail.com [Key Laboratory of Mechanical Reliability for Heavy Equipments and Large Structures of Hebei Province, Yanshan University, Qinhuangdao 066004 (China); Sun, Hongyu [Key Laboratory of Mechanical Reliability for Heavy Equipments and Large Structures of Hebei Province, Yanshan University, Qinhuangdao 066004 (China)

    2012-04-16

    The conventional velocity extraction algorithm in MDS method has difficulty to determine the small flow velocity. This study proposes a new method to calculate the bulk velocity in nano-flows. Based on the Newton's law of viscosity, according to the calculated viscosities and shear stresses, the flow velocity can be obtained by numerical integration. This new method can overcome the difficulty existed in the conventional MDS method and improve the stability of the computational process. Numerical results show that this method is effective for the extraction of bulk velocity, no matter the bulk velocity is large or small. -- Highlights: ► Proposed a new method to calculate the bulk velocity in nano-flows. ► It is effective for the extraction of small bulk velocity. ► The accuracy, convergence and stability of the new method is good.

  10. Bulk velocity extraction for nano-scale Newtonian flows

    International Nuclear Information System (INIS)

    Zhang, Wenfei; Sun, Hongyu

    2012-01-01

    The conventional velocity extraction algorithm in MDS method has difficulty to determine the small flow velocity. This study proposes a new method to calculate the bulk velocity in nano-flows. Based on the Newton's law of viscosity, according to the calculated viscosities and shear stresses, the flow velocity can be obtained by numerical integration. This new method can overcome the difficulty existed in the conventional MDS method and improve the stability of the computational process. Numerical results show that this method is effective for the extraction of bulk velocity, no matter the bulk velocity is large or small. -- Highlights: ► Proposed a new method to calculate the bulk velocity in nano-flows. ► It is effective for the extraction of small bulk velocity. ► The accuracy, convergence and stability of the new method is good.

  11. Temperature dependence of bulk viscosity in water using acoustic spectroscopy

    International Nuclear Information System (INIS)

    Holmes, M J; Parker, N G; Povey, M J W

    2011-01-01

    Despite its fundamental role in the dynamics of compressible fluids, bulk viscosity has received little experimental attention and there remains a paucity of measured data. Acoustic spectroscopy provides a robust and accurate approach to measuring this parameter. Working from the Navier-Stokes model of a compressible fluid one can show that the bulk viscosity makes a significant and measurable contribution to the frequency-squared acoustic attenuation. Here we employ this methodology to determine the bulk viscosity of Millipore water over a temperature range of 7 to 50 0 C. The measured attenuation spectra are consistent with the theoretical predictions, while the bulk viscosity of water is found to be approximately three times larger than its shear counterpart, reinforcing its significance in acoustic propagation. Moreover, our results demonstrate that this technique can be readily and generally applied to fluids to accurately determine their temperature dependent bulk viscosities.

  12. Bulk viscosity of spin-one color superconductors

    International Nuclear Information System (INIS)

    Sa'd, Basil A.

    2009-01-01

    The bulk viscosity of several quark matter phases is calculated. It is found that the effect of color superconductivity is not trivial, it may suppress, or enhance the bulk viscosity depending on the critical temperature and the temperature at which the bulk viscosity is calculated. Also, is it found that the effect of neutrino-emitting Urca processes cannot be neglected in the consideration of the bulk viscosity of strange quark matter. The results for the bulk viscosity of strange quark matter are used to calculate the r-mode instability window of quark stars with several possible phases. It is shown that each possible phase has a different structure for the r-mode instability window. (orig.)

  13. Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates

    KAUST Repository

    Hwang, David

    2016-09-23

    We demonstrate a thin-film flip-chip (TFFC) process for LEDs grown on freestanding c-plane GaN substrates. LEDs are transferred from a bulk GaN substrate to a sapphire submount via a photoelectrochemical (PEC) undercut etch. This PEC liftoff method allows for substrate reuse and exposes the N-face of the LEDs for additional roughening. The LEDs emitted at a wavelength of 432 nm with a turn on voltage of ~3 V. Etching the LEDs in heated KOH after transferring them to a sapphire submount increased the peak external quantum efficiency (EQE) by 42.5% from 9.9% (unintentionally roughened) to 14.1% (intentionally roughened).

  14. Raman spectroscopy of ZnMnO thin films grown by pulsed laser deposition

    Science.gov (United States)

    Orozco, S.; Riascos, H.; Duque, S.

    2016-02-01

    ZnMnO thin films were grown by Pulsed Laser Deposition (PLD) technique onto Silicon (100) substrates at different growth conditions. Thin films were deposited varying Mn concentration, substrate temperature and oxygen pressure. ZnMnO samples were analysed by using Raman Spectroscopy that shows a red shift for all vibration modes. Raman spectra revealed that nanostructure of thin films was the same of ZnO bulk, wurzite hexagonal structure. The structural disorder was manifested in the line width and shape variations of E2(high) and E2(low) modes located in 99 and 434cm-1 respectively, which may be due to the incorporation of Mn ions inside the ZnO crystal lattice. Around 570cm-1 was found a peak associated to E1(LO) vibration mode of ZnO. 272cm-1 suggest intrinsic host lattice defects. Additional mode centred at about 520cm-1 can be overlap of Si and Mn modes.

  15. Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Z.Q. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)]. E-mail: chenzq@taka.jaeri.go.jp; Yamamoto, S. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Kawasuso, A. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Xu, Y. [Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan); Sekiguchi, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2005-05-15

    Homo- and heteroepitaxial ZnO films were grown on ZnO (0001) and Al{sub 2}O{sub 3} (1-bar 1-bar 2-bar -bar 0) substrates by using pulsed laser deposition. The X-ray diffraction and Raman measurements for these films show good correspondence with the bulk ZnO substrate, which confirms successful growth of c-axis oriented ZnO layer. Strong UV emission was also observed in these films, indicating good optical quality. However, the surface roughness differs very much for the homo- and heteroepitaxial film, that is, much less for the homoepitaxial layer. Positron annihilation measurements reveal a higher vacancy concentration in the homoepitaxial layer.

  16. Properties of CoSb{sub 3} films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Christen, H M; Mandrus, D G; Norton, D P; Boatner, L A; Sales, B C

    1997-07-01

    Polycrystalline CoSb{sub 3} films were grown on a variety of electrically insulating substrates by pulsed laser ablation from a stoichiometric hot-pressed target. These films are fully crystallized in the skutterudite structure, and the grains exhibit a strongly preferred alignment of the cubic [310]-axis perpendicular to the substrate surface. The film quality is studied for different single-crystal substrates and as a function of growth temperature and background gas. Hall measurements show that the films are p-type semiconducting with a room-temperature carrier density of 3 x 10{sup 20} holes/cm{sup 3}. The Hall mobility is found to be 50 to 60 cm{sup 2}/Vs, which is high for such a heavily-doped material. The Seebeck coefficient and the resistivity are measured as a function of temperature and are compared to bulk measurements.

  17. MnSi nanostructures obtained from epitaxially grown thin films: magnetotransport and Hall effect

    Science.gov (United States)

    Schroeter, D.; Steinki, N.; Schilling, M.; Fernández Scarioni, A.; Krzysteczko, P.; Dziomba, T.; Schumacher, H. W.; Menzel, D.; Süllow, S.

    2018-06-01

    We present a comparative study of the (magneto)transport properties, including Hall effect, of bulk, epitaxially grown thin film and nanostructured MnSi. In order to set our results in relation to published data we extensively characterize our materials, this way establishing a comparatively good sample quality. Our analysis reveals that in particular for thin film and nanostructured material, there are extrinsic and intrinsic contributions to the electronic transport properties, which by modeling the data we separate out. Finally, we discuss our Hall effect data of nanostructured MnSi under consideration of the extrinsic contributions and with respect to the question of the detection of a topological Hall effect in a skyrmionic lattice.

  18. Thermal characterization of polycrystalline diamond thin film heat spreaders grown on GaN HEMTs

    Science.gov (United States)

    Zhou, Yan; Ramaneti, Rajesh; Anaya, Julian; Korneychuk, Svetlana; Derluyn, Joff; Sun, Huarui; Pomeroy, James; Verbeeck, Johan; Haenen, Ken; Kuball, Martin

    2017-07-01

    Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 to 1000 nm. Transient thermoreflectance results were combined with device thermal simulations to investigate the heat spreading benefit of the diamond layer. The observed thermal conductivity (κDia) of PCD films is one-to-two orders of magnitude lower than that of bulk PCD and exhibits a strong layer thickness dependence, which is attributed to the grain size evolution. The films exhibit a weak temperature dependence of κDia in the measured 25-225 °C range. Device simulation using the experimental κDia and thermal boundary resistance values predicts at best a 15% reduction in peak temperature when the source-drain opening of a passivated AlGaN/GaN-on-Si HEMT is overgrown with PCD.

  19. Disinfection ultraviolet radiation bulk food products

    OpenAIRE

    Семенов, А. А.

    2014-01-01

    В работе представлены результаты обеззараживания сыпучих пищевых продуктов ультрафиолетовым излучением. Предложена технология бактерицидного обеззараживания сыпучих продуктов с размером частиц до 50 мкм. Проведены необходимые расчеты, связанные с дозой облучения, с временем пребывания частиц в зоне облучения и необходимой дозой инактивации в зависимости от вида бактерий. Considered the results of bulk food products disinfection by ultraviolet radiation. The technology bactericidal disinfec...

  20. Stability of bulk metallic glass structure

    Energy Technology Data Exchange (ETDEWEB)

    Jain, H.; Williams, D.B.

    2003-06-18

    The fundamental origins of the stability of the (Pd-Ni){sub 80}P{sub 20} bulk metallic glasses (BMGs), a prototype for a whole class of BMG formers, were explored. While much of the properties of their BMGs have been characterized, their glass-stability have not been explained in terms of the atomic and electronic structure. The local structure around all three constituent atoms was obtained, in a complementary way, using extended X-ray absorption fine structure (EXAFS), to probe the nearest neighbor environment of the metals, and extended energy loss fine structure (EXELFS), to investigate the environment around P. The occupied electronic structure was investigated using X-ray photoelectron spectroscopy (XPS). The (Pd-Ni){sub 80}P{sub 20} BMGs receive their stability from cumulative, and interrelated, effects of both atomic and electronic origin. The stability of the (Pd-Ni){sub 80}P{sub 20} BMGs can be explained in terms of the stability of Pd{sub 60}Ni{sub 20}P{sub 20} and Pd{sub 30}Ni{sub 50}P{sub 20}, glasses at the end of BMG formation. The atomic structure in these alloys is very similar to those of the binary phosphide crystals near x=0 and x=80, which are trigonal prisms of Pd or Ni atoms surrounding P atoms. Such structures are known to exist in dense, randomly-packed systems. The structure of the best glass former in this series, Pd{sub 40}Ni{sub 40}P{sub 20} is further described by a weighted average of those of Pd{sub 30}Ni{sub 50}P{sub 20} and Pd{sub 60}Ni{sub 20}P{sub 20}. Bonding states present only in the ternary alloys were found and point to a further stabilization of the system through a negative heat of mixing between Pd and Ni atoms. The Nagel and Tauc criterion, correlating a decrease in the density of states at the Fermi level with an increase in the glass stability, was consistent with greater stability of the Pd{sub x}Ni{sub (80-x)}P{sub 20} glasses with respect to the binary alloys of P. A valence electron concentration of 1.8 e/a, which

  1. Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Zaunbrecher, Katherine N. [Department of Physics, Colorado State University, Fort Collins, Colorado 80523 (United States); National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Kuciauskas, Darius; Dippo, Pat; Barnes, Teresa M. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Swartz, Craig H.; Edirisooriya, Madhavie; Ogedengbe, Olanrewaju S.; Sohal, Sandeep; Hancock, Bobby L.; LeBlanc, Elizabeth G.; Jayathilaka, Pathiraja A. R. D.; Myers, Thomas H. [Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666 (United States)

    2016-08-29

    Heterostructures with CdTe and CdTe{sub 1-x}Se{sub x} (x ∼ 0.01) absorbers between two wider-band-gap Cd{sub 1-x}Mg{sub x}Te barriers (x ∼ 0.25–0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ∼6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.

  2. Thermal stability of iron silicide nanowires epitaxially grown on Si(110) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zou, Zhi-Qiang, E-mail: zouzhq@shanghaitech.edu.cn [School of Physical Science and Technology, ShanghaiTech University, 100 Haike Road, Pudong, Shanghai, 201210 (China); Li, Xu; Liu, Xiao-Yong; Shi, Kai-Juan; Guo, Xin-Qiu [Analytical and Testing Center, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai 200240 (China)

    2017-03-31

    Highlights: • The α-FeSi{sub 2} nanowires epitaxially grown on Si(110) can be stable up to 750 °C. • The stable temperature of the nanowires is much lower than that of the bulk α-FeSi{sub 2} due to their small size and high relative surface area. • With increasing annealing temperature, the α-FeSi{sub 2} nanowires undergo an Ostwald ripening process and transform into large β-FeSi{sub 2} nanorods or three-dimensional nanocrystals. • The reduction in surface energy drives the transformation from metallic α-FeSi{sub 2} phase to semiconducting β-FeSi{sub 2} phase. - Abstract: Metallic α-FeSi{sub 2} nanowires (NWs) are epitaxially grown on Si(110) at 650 °C. Their evolution as a function of annealing temperature has been studied in situ by scanning tunneling microscopy. The NWs are stable up to 750 °C, which is much lower than that of the bulk α-FeSi{sub 2}. With further increasing the annealing temperature, some NWs begin to shrink in length and transform into wider and higher semiconducting β-FeSi{sub 2} nanorods or three-dimensional (3D) islands at 925 °C. The phase transformation is driven by the reduction in surface energy. On the other hand, some α-FeSi{sub 2} NWs begin to dissolve and become thinner until disappearing. The growth of the β-FeSi{sub 2} nanorods or 3D nanocrystals follows the Ostwald ripening mechanism, i.e., the large islands grow in size at the expense of the small ones. X-ray photoelectron spectroscopy study shows that the Fe 2p peaks of β-FeSi{sub 2} nanocrystals exhibit a negative shift of 0.2 eV with respect to the α-FeSi{sub 2} NWs.

  3. The Crystal structure of InAs nanorods grown onto Si[111] substrate

    Energy Technology Data Exchange (ETDEWEB)

    Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Walter-Flex-Str. 3,57072, Siegen (Germany); Breuer, Steffen; Dimakis, Manos; Geelhaar, Lutz [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2011-07-01

    Nanowires are of particular interest due to the ability to synthesize heterostructures in the nanometer range. It was found that nearly any AIIIBV semiconductor material can be grown as NWs onto another AIIIBV or group IV [111] substrate independent from lattice mismatch. We presented an X-ray characterization of InAs NRs on Si [111] grown by assist free MBE method. Lattice mismatch of this materials is 11%. For study of strain realizing we concentrated our research on initial stages of growth process investigating samples set with different growth time. Using synchrotron radiation we have performed experiments in symmetrical and asymmetrical out-of plane scattering geometry and grazing-incidence diffraction. Combining the results we were able to characterize the transition between silicon silicon substrate and InAs NWs. We find in-plane lattice mismatch of -0.18% close to the interface compared to InAs bulk material. With help of micro-focus setup we are able measure structural parameters of single NWs to determine the strain accomodation as function of NW size. In particular using asymmetric wurzite-sensitive reflections under coherent beam illumination we could quantify the number of stacking faults. In the talk we present details of the analysis and first simulation results.

  4. High quality TmIG films with perpendicular magnetic anisotropy grown by sputtering

    Science.gov (United States)

    Wu, C. N.; Tseng, C. C.; Yeh, S. L.; Lin, K. Y.; Cheng, C. K.; Fanchiang, Y. T.; Hong, M.; Kwo, J.

    Ferrimagnetic thulium iron garnet (TmIG) films grown on gadolinium gallium garnet substrates recently showed stress-induced perpendicular magnetic anisotropy (PMA), attractive for realization of quantum anomalous Hall effect (QAHE) of topological insulator (TI) films via the proximity effect. Moreover, current induced magnetization switching of Pt/TmIG has been demonstrated for the development of room temperature (RT) spintronic devices. In this work, high quality TmIG films (about 25nm) were grown by sputtering at RT followed by post-annealing. We showed that the film composition is tunable by varying the growth parameters. The XRD results showed excellent crystallinity of stoichiometric TmIG films with an out-of-plane lattice constant of 1.2322nm, a narrow film rocking curve of 0.017 degree, and a film roughness of 0.2 nm. The stoichiometric films exhibited PMA and the saturation magnetization at RT was 109 emu/cm3 (RT bulk value 110 emu/cm3) with a coercive field of 2.7 Oe. In contrast, TmIG films of Fe deficiency showed in-plane magnetic anisotropy. The high quality sputtered TmIG films will be applied to heterostructures with TIs or metals with strong spin-orbit coupling for novel spintronics.

  5. Dramatic improvement of crystal quality for low-temperature-grown rabbit muscle aldolase

    International Nuclear Information System (INIS)

    Park, HaJeung; Rangarajan, Erumbi S.; Sygusch, Jurgen; Izard, Tina

    2010-01-01

    Rabbit muscle aldolase (RMA) was crystallized in complex with the low-complexity domain (LC4) of sorting nexin 9. Monoclinic crystals were obtained at room temperature that displayed large mosaicity and poor X-ray diffraction. However, orthorhombic RMA–LC4 crystals grown at 277 K under similar conditions exhibited low mosaicity, allowing data collection to 2.2 Å Bragg spacing and structure determination. Rabbit muscle aldolase (RMA) was crystallized in complex with the low-complexity domain (LC4) of sorting nexin 9. Monoclinic crystals were obtained at room temperature that displayed large mosaicity and poor X-ray diffraction. However, orthorhombic RMA–LC4 crystals grown at 277 K under similar conditions exhibited low mosaicity, allowing data collection to 2.2 Å Bragg spacing and structure determination. It was concluded that the improvement of crystal quality as indicated by the higher resolution of the new RMA–LC4 complex crystals was a consequence of the introduction of new lattice contacts at lower temperature. The lattice contacts corresponded to an increased number of interactions between high-entropy side chains that mitigate the lattice strain incurred upon cryocooling and accompanying mosaic spread increases. The thermodynamically unfavorable immobilization of high-entropy side chains used in lattice formation was compensated by an entropic increase in the bulk-solvent content owing to the greater solvent content of the crystal lattice

  6. The structure and composition of lithium fluoride films grown by off-axis pulsed laser ablation

    International Nuclear Information System (INIS)

    Henley, S.J.; Ashfold, M.N.R.; Pearce, S.R.J.

    2003-01-01

    Alkali halide coatings have been reported to act as effective dipole layers to lower the surface work function and induce a negative electron affinity of diamond surfaces. Here, the results of the analysis of films grown on silicon and quartz substrates by 193 nm pulsed laser ablation from a commercially available sintered disk of LiF are reported. The morphology, composition and crystallinity of films grown are examined and suitable deposition parameters for optimising the growth are suggested. The ablation was shown to be very efficient at removing a large amount of material from the target, even at relatively low fluence. The morphology of the films produced was poor, however, with a high density of asperities categorised as either particulates produced by exfoliation, or as droplets produced by hydrodynamic sputtering. An improved morphology with smaller droplets and fewer particulates could be produced by mounting the substrate at an angle of 65 deg. to the axis of the ablation plume and using a fluence close to the measured ablation threshold of 1.2±0.1 J/cm 2 . The elemental composition of the films was shown to be indistinguishable from that of bulk LiF, despite evidence for significant recondensation of Li back onto the target. Films containing crystal grains oriented with the direction normal to the substrate surface were observed at substrate temperatures in excess of 300 deg. C. An improved extent of orientation was observed on the quartz substrates

  7. Bulk media assay using backscattered neutron spectrometry

    International Nuclear Information System (INIS)

    Csikai, J.

    2000-01-01

    This paper summarized a systematic study of bulk media assay using backscattered neutron spectrometry. The source-sample-detector geometry used for the measurements of leakage and elastically backscattered (EBS) spectra of neutrons is shown. Neutrons up to about 14 MeV were produced via 2 H (d,n) and 9 Be (d,n) reactions using different deuteron beam energies between 5 and 10 MeV at the MGC-20E cyclotron of ATOMKI (Debrecen). Neutron yields of the Pu-Be and 252 Cf sources were 5.25 x 10 6 n/s and 1.8 x 10 6 n/s, respectively. Flux density distributions of thermal and primary 14 MeV neutrons were measured for graphite, water and coal samples in various moderator (M)-sample (S)-reflector (R) geometries. Relative fractions and integrated yields of 252 Cf, Pu-Be and 14 MeV neutrons above the (n,n'γ) reaction thresholds for 12 C, 16 O and 28 Si isotopes vs sample thickness have also been determined. It was found that the integrated reaction rate vs sample thickness decreasing exponentially with different attenuation coefficients depending on the neutron spectrum and the composition of the sample. The spectra of neutrons from sources passing through slabs of water, graphite, sand, Al, Fe and Pb up to 20 cm in thickness have been measured by a PHRS system in the 1.2 to 1.5 MeV range. The leakage neutron spectra from a Pu-Be source placed in the center of 30 cm diameter sphere filled with water, paraffin oil, SiO 2 , zeolite and river sand were also measured. The measured spectra have been compared with the calculated results obtained by the three dimensional Monte-Carlo code MCNP-4A and point-wise cross sections from the ENDF/B-4, ENDF/B-6, ENDF/E-1, BROND-2 and JENDL-3.1 data files. New results were obtained for validation of different data libraries from a comparison on the measured and the calculated spectra. Some typical results for water, Al, sand and Fe are shown. A combination of the backscattered neutron spectrometry with the surface gauge used both for the

  8. Soft magnetic properties of bulk amorphous Co-based samples

    International Nuclear Information System (INIS)

    Fuezer, J.; Bednarcik, J.; Kollar, P.

    2006-01-01

    Ball milling of melt-spun ribbons and subsequent compaction of the resulting powders in the supercooled liquid region were used to prepare disc shaped bulk amorphous Co-based samples. The several bulk samples have been prepared by hot compaction with subsequent heat treatment (500 deg C - 575 deg C). The influence of the consolidation temperature and follow-up heat treatment on the magnetic properties of bulk samples was investigated. The final heat treatment leads to decrease of the coercivity to the value between the 7.5 to 9 A/m (Authors)

  9. Onset of bulk pinning in BSCCO single crystals

    Science.gov (United States)

    van der Beek, C. J.; Indenbom, M. V.; Berseth, V.; Li, T. W.; Benoit, W.

    1996-11-01

    The long growth defects often found in Bi2Sr2CaCu2O8, “single” crystals effectively weaken the geometrical barrier and lower the field of first flux penetration. This means that the intrinsic (bulk) magnetic properties can be more easily accessed using magnetic measurements. Thus, the onset of strong bulk flux pinning in the sample bulk is determined to lie at T ≈ 40 K, indepedent of whether the field strength is above or below the field of the second peak in the magnetisation.

  10. Bulk local states and crosscaps in holographic CFT

    Energy Technology Data Exchange (ETDEWEB)

    Nakayama, Yu [Department of Physics, Rikkyo University,Toshima, Tokyo 175-8501 (Japan); Kavli Institute for the Physics and Mathematics of the Universe (WPI), University of Tokyo,Kashiwa, Chiba 277-8583 (Japan); Ooguri, Hirosi [Kavli Institute for the Physics and Mathematics of the Universe (WPI), University of Tokyo,Kashiwa, Chiba 277-8583 (Japan); Walter Burke Institute for Theoretical Physics, California Institute of Technology,Pasadena, CA 91125 (United States); Center for Mathematical Sciences and Applications andCenter for the Fundamental Laws of Nature, Harvard University,Cambridge, MA 02138 (United States)

    2016-10-17

    In a weakly coupled gravity theory in the anti-de Sitter space, local states in the bulk are linear superpositions of Ishibashi states for a crosscap in the dual conformal field theory. The superposition structure can be constrained either by the microscopic causality in the bulk gravity or the bootstrap condition in the boundary conformal field theory. We show, contrary to some expectation, that these two conditions are not compatible to each other in the weak gravity regime. We also present an evidence to show that bulk local states in three dimensions are not organized by the Virasoro symmetry.

  11. Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lee, S.C.; Ng, S.S.; Hassan, H. Abu; Hassan, Z.; Zainal, N.; Novikov, S.V.; Foxon, C.T.; Kent, A.J.

    2014-01-01

    Optical properties of free standing cubic gallium nitride grown by molecular beam epitaxy system are investigated by a polarized infrared (IR) reflectance technique. A strong reststrahlen band, which reveals the bulk-like optical phonon frequencies, is observed. Meanwhile, continuous oscillation fringes, which indicate the sample consists of two homogeneous layers with different dielectric constants, are observed in the non-reststrahlen region. By obtaining the first derivative of polarized IR reflectance spectra measured at higher angles of incidence, extra phonon resonances are identified at the edges of the reststrahlen band. The observations are verified with the theoretical results simulated based on a multi-oscillator model. - Highlights: • First time experimental studies of IR optical phonons in bulk like, cubic GaN layer. • Detection of extra phonon modes of cubic GaN by polarized IR reflectance technique. • Revelation of IR multiphonon modes of cubic GaN by first derivative numerical method. • Observation of multiphonon modes requires very high angle of incidence. • Resonance splitting effect induced by third phonon mode is a qualitative indicator

  12. Photoluminescence and lasing properties of MAPbBr3 single crystals grown from solution

    Science.gov (United States)

    Aryal, Sandip; Lafalce, Evan; Zhang, Chuang; Zhai, Yaxin; Vardeny, Z. Valy

    Recent studies of solution-grown single crystals of inorganic-organic hybrid lead-trihalide perovskites have suggested that surface traps may play a significant role in their photophysics. We study electron-hole recombination in single crystal MAPbBr3 through such trap states using cw photoluminescence (PL) and ps transient photoinduced absorption (PA) spectroscopies. By varying the depth of the collecting optics we examined the contributions from surface and bulk radiative recombination. We found a surface dominated PL band at the band-edge that is similar to that observed from polycrystalline thin films, as well as a weaker red-shifted emission band that originates from the bulk crystal. The two PL bands are distinguished in their temperature, excitation intensity and polarization dependencies, as well as their ps dynamics. Additionally, amplified spontaneous emission and crystal-related cavity lasing modes were observed in the same spectral range as the PL band assigned to the surface recombination. This work was funded by AFOSR through MURI Grant RA 9550-14-1-0037.

  13. Observing grain boundaries in CVD-grown monolayer transition metal dichalcogenides

    KAUST Repository

    Ly, Thuchue

    2014-11-25

    Two-dimensional monolayer transition metal dichalcogenides (TMdCs), driven by graphene science, revisit optical and electronic properties, which are markedly different from bulk characteristics. These properties are easily modified due to accessibility of all the atoms viable to ambient gases, and therefore, there is no guarantee that impurities and defects such as vacancies, grain boundaries, and wrinkles behave as those of ideal bulk. On the other hand, this could be advantageous in engineering such defects. Here, we report a method of observing grain boundary distribution of monolayer TMdCs by a selective oxidation. This was implemented by exposing directly the TMdC layer grown on sapphire without transfer to ultraviolet light irradiation under moisture-rich conditions. The generated oxygen and hydroxyl radicals selectively functionalized defective grain boundaries in TMdCs to provoke morphological changes at the boundary, where the grain boundary distribution was observed by atomic force microscopy and scanning electron microscopy. This paves the way toward the investigation of transport properties engineered by defects and grain boundaries. (Figure Presented).

  14. Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers

    International Nuclear Information System (INIS)

    Zhang, Zi-Hui; Liu, Wei; Ju, Zhengang; Tiam Tan, Swee; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Wang, Liancheng; Wei Sun, Xiao; Volkan Demir, Hilmi

    2014-01-01

    InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem intrinsic to the III-nitrides. Here, we show that the QCSE is self-screened by the polarization induced bulk charges enabled by designing quantum barriers. The InN composition of the InGaN quantum barrier graded along the growth orientation opportunely generates the polarization induced bulk charges in the quantum barrier, which well compensate the polarization induced interface charges, thus avoiding the electric field in the quantum wells. Consequently, the optical output power and the external quantum efficiency are substantially improved for the LEDs. The ability to self-screen the QCSE using polarization induced bulk charges opens up new possibilities for device engineering of III-nitrides not only in LEDs but also in other optoelectronic devices.

  15. Morphology control for highly efficient organic–inorganic bulk heterojunction solar cell based on Ti-alkoxide

    International Nuclear Information System (INIS)

    Kato, Takehito; Hagiwara, Naoki; Suzuki, Eiji; Nasu, Yuki; Izawa, Satoru; Tanaka, Kouichi; Kato, Ariyuki

    2016-01-01

    The number of publications concerned with typical bulk-heterojunction solar cells that use fullerene derivatives and inorganic materials as electron acceptors has grown very rapidly. In this work, we focus on Ti-alkoxides as electron acceptors in the photoactive layers of fullerene-free bulk-heterojunction solar cells. We show that it is possible to control the morphology by adjusting the molecular structure and size of the Ti-alkoxides. The short-circuit current density (J_s_c) increased to 191 μA/cm"2 from 25 μA/cm"2 with a maximum, when the phase-separation structure was continuously formed to within about 20 nm below the exciton diffusion length by using either titanium(IV) ethoxide or isopropoxide as an electron acceptor. Within a thickness of 30 nm, the photoactive layer is not influenced by the electron transfer ability; thus, we demonstrate that the charge-separation efficiency is equivalent to that of a fullerene system. - Highlights: • An organic–inorganic bulk-heterojunction photoactive layer was used. • Electron donor was a semiconducting polymer and electron acceptor was Ti-alkoxide. • Demonstration of morphology control by Ti-alkoxide molecules. • Determination of Jsc value by the phase-separation structure in an ultra-thin film. • Charge-separation efficiency of Ti-alkoxide system equivalent to fullerene system.

  16. Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zi-Hui; Liu, Wei; Ju, Zhengang; Tiam Tan, Swee; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Wang, Liancheng; Wei Sun, Xiao, E-mail: exwsun@ntu.edu.sg, E-mail: volkan@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Volkan Demir, Hilmi, E-mail: exwsun@ntu.edu.sg, E-mail: volkan@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-06-16

    InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem intrinsic to the III-nitrides. Here, we show that the QCSE is self-screened by the polarization induced bulk charges enabled by designing quantum barriers. The InN composition of the InGaN quantum barrier graded along the growth orientation opportunely generates the polarization induced bulk charges in the quantum barrier, which well compensate the polarization induced interface charges, thus avoiding the electric field in the quantum wells. Consequently, the optical output power and the external quantum efficiency are substantially improved for the LEDs. The ability to self-screen the QCSE using polarization induced bulk charges opens up new possibilities for device engineering of III-nitrides not only in LEDs but also in other optoelectronic devices.

  17. 76 FR 16323 - Irish Potatoes Grown in Washington; Continuance Referendum

    Science.gov (United States)

    2011-03-23

    ...; FV11-946-1 CR] Irish Potatoes Grown in Washington; Continuance Referendum AGENCY: Agricultural... conducted among eligible Washington potato growers to determine whether they favor continuance of the marketing order regulating the handling of Irish potatoes grown in Washington. DATES: The referendum will be...

  18. Leaf anatomy of genotypes of banana plant grown under coloured ...

    African Journals Online (AJOL)

    This study aimed to evaluate the effect of spectral light quality on different anatomical features of banana tree plantlets grown under coloured shade nets. Banana plants of five genotypes obtained from micropropagation, were grown under white, blue, red and black nets, with shade of 50%, in a completely randomized ...

  19. Influence of shading on container-grown flowering dogwoods

    Science.gov (United States)

    Bare root dogwoods can be successfully grown when transplanted into a container production system. Shade treatments regardless of color or density did have an effect on the plant growth of Cherokee Brave™ and Cherokee Princess dogwood. Plants grown under 50% black and 50% white shade had more heigh...

  20. Structural Reliability of the Nigerian Grown Abura Timber Bridge ...

    African Journals Online (AJOL)

    Structural reliability analysis was carried out on the Nigerian grown Abura timber, to ascertain its structural performance as timber bridge beams. Samples of the Nigerian grown Abura timber were bought from timber market, seasoned naturally and their structural/strength properties were determined at a moisture content of ...

  1. Superconductivity in MBE grown InN

    Energy Technology Data Exchange (ETDEWEB)

    Gunes, M.; Balkan, N. [School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, CO4 3SQ, Colchester (United Kingdom); Tiras, E.; Ardali, S. [Department of Physics, Faculty of Science, Anadolu University, Yunus Emre Campus, 26470, Eskisehir (Turkey); Ajagunna, A.O.; Iliopoulos, E.; Georgakilas, A. [Microelectronics Research Group, IESL, FORTH and Physics Department, University of Crete, P.O. Box 1385, 71110 Heraklion, Crete (Greece)

    2011-05-15

    We present the experimental investigation of superconductivity in unintentionally doped MBE grown InN samples with various InN film thicknesses. A significant change in resistivity was observed at 3.82 K, for an 1080 nm InN layer with carrier concentration n{sub 3D}=1.185x10{sup 19} cm{sup -3}. However, no significant resistance change was observed in the case of InN samples with carrier density of 1.024x10{sup 19} cm{sup -3}, 1.38x10{sup 19} cm{sup -3}, and thicknesses of 2070 and 4700 nm, respectively. The carrier density of all investigated samples was within the range of values between the Mott transition (2x10{sup 17} cm{sup -3}) and the superconductivity to metal transition (7x10{sup 20} cm{sup -3}). We believe that at lower temperatures ({sup 3}He) which we cannot achieve with our set-up, the phase transition in other samples is likely to be observed. The origin of the observed anisotropic type-II superconductivity is discussed (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Can groundwater be successfully implemented as a bulk water ...

    African Journals Online (AJOL)

    that groundwater can be developed as a potential viable bulk-water supply source. This paper attempts .... fracturing, even when using conventional geophysical methods. Gneiss and/or ..... will start to be self-sufficient in about 2018 and 2019.

  3. Role of the antiferromagnetic bulk spins in exchange bias

    Energy Technology Data Exchange (ETDEWEB)

    Schuller, Ivan K. [Center for Advanced Nanoscience and Physics Department, University of California San Diego, La Jolla, CA 92093 (United States); Morales, Rafael, E-mail: rafael.morales@ehu.es [Department of Chemical-Physics & BCMaterials, University of the Basque Country UPV/EHU (Spain); IKERBASQUE, Basque Foundation for Science, 48011 Bilbao (Spain); Batlle, Xavier [Departament Física Fonamental and Institut de Nanociència i Nanotecnologia, Universitat de Barcelona, c/ Martí i Franqués s/n, 08028 Barcelona, Catalonia (Spain); Nowak, Ulrich [Department of Physics, University of Konstanz, 78464 Konstanz (Germany); Güntherodt, Gernot [Physics Institute (IIA), RWTH Aachen University, Campus RWTH-Melaten, 52074 Aachen (Germany)

    2016-10-15

    This “Critical Focused Issue” presents a brief review of experiments and models which describe the origin of exchange bias in epitaxial or textured ferromagnetic/antiferromagnetic bilayers. Evidence is presented which clearly indicates that inner, uncompensated, pinned moments in the bulk of the antiferromagnet (AFM) play a very important role in setting the magnitude of the exchange bias. A critical evaluation of the extensive literature in the field indicates that it is useful to think of this bulk, pinned uncompensated moments as a new type of a ferromagnet which has a low total moment, an ordering temperature given by the AFM Néel temperature, with parallel aligned moments randomly distributed on the regular AFM lattice. - Highlights: • We address the role of bulk antiferromagnetic spins in the exchange bias phenomenon. • Significant experiments on how bulk AFM spins determine exchange bias are highlighted. • We explain the model that accounts for experimental results.

  4. Bulk Nano-structured Materials for Turbomachinery Components, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR Phase I effort seeks to exploit some of the tremendous benefits that could be attained from a revolutionary new approach to grain refinement in bulk...

  5. Preparation of Nb thin films with bulk transition temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Peirce, L H [Florida State Univ., Tallahassee (USA). Dept. of Physics

    1984-08-01

    Thin films (1000-2000 A) of Nb were prepared with bulk transition temperatures (9.25 K) by evaporation from an electron gun. Necessary substrate temperatures, evaporation rates and H/sub 2/O pressures were determined.

  6. Role of the antiferromagnetic bulk spins in exchange bias

    International Nuclear Information System (INIS)

    Schuller, Ivan K.; Morales, Rafael; Batlle, Xavier; Nowak, Ulrich; Güntherodt, Gernot

    2016-01-01

    This “Critical Focused Issue” presents a brief review of experiments and models which describe the origin of exchange bias in epitaxial or textured ferromagnetic/antiferromagnetic bilayers. Evidence is presented which clearly indicates that inner, uncompensated, pinned moments in the bulk of the antiferromagnet (AFM) play a very important role in setting the magnitude of the exchange bias. A critical evaluation of the extensive literature in the field indicates that it is useful to think of this bulk, pinned uncompensated moments as a new type of a ferromagnet which has a low total moment, an ordering temperature given by the AFM Néel temperature, with parallel aligned moments randomly distributed on the regular AFM lattice. - Highlights: • We address the role of bulk antiferromagnetic spins in the exchange bias phenomenon. • Significant experiments on how bulk AFM spins determine exchange bias are highlighted. • We explain the model that accounts for experimental results.

  7. Pseudopotentials for calculating the bulk and surface properties of solids

    International Nuclear Information System (INIS)

    Cohen, M.L.

    1983-01-01

    A survey is presented describing research in condensed matter physics using pseudopotentials to calculate electronic, structural, and vibrational properties of solids. Semiconductors are emphasized, and both bulk and surface calculations are discussed. (author) [pt

  8. Bulk metallic glass for low noise fluxgate, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — The team of Prime Photonics, Virginia Tech, and Utron Kinetics propose to demonstrate a method for fabrication of a bulk, amorphous, cobalt-rich material that...

  9. Bulk and edge spin transport in topological magnon insulators

    Science.gov (United States)

    Rückriegel, Andreas; Brataas, Arne; Duine, Rembert A.

    2018-02-01

    We investigate the spin transport properties of a topological magnon insulator, a magnetic insulator characterized by topologically nontrivial bulk magnon bands and protected magnon edge modes located in the bulk band gaps. Employing the Landau-Lifshitz-Gilbert phenomenology, we calculate the spin current driven through a normal metal |topological magnon insulator |normal metal heterostructure by a spin accumulation imbalance between the metals, with and without random lattice defects. We show that bulk and edge transport are characterized by different length scales. This results in a characteristic system size where the magnon transport crosses over from being bulk dominated for small systems to edge dominated for larger systems. These findings are generic and relevant for topological transport in systems of nonconserved bosons.

  10. Concentration polarization, surface currents, and bulk advection in a microchannel

    DEFF Research Database (Denmark)

    Nielsen, Christoffer Peder; Bruus, Henrik

    2014-01-01

    . A remarkable outcome of the investigations is the discovery of strong couplings between bulk advection and the surface current; without a surface current, bulk advection is strongly suppressed. The numerical simulations are supplemented by analytical models valid in the long channel limit as well...... as in the limit of negligible surface charge. By including the effects of diffusion and advection in the diffuse part of the electric double layers, we extend a recently published analytical model of overlimiting current due to surface conduction....

  11. Bulk Extractor 1.4 User’s Manual

    Science.gov (United States)

    2013-08-01

    optimistically decompresses data in ZIP, GZIP, RAR, and Mi- crosoft’s Hibernation files. This has proven useful, for example, in recovering email...command line. Java 7 or above must be installed on the machine for the Bulk Extractor Viewer to run. Instructions on running bulk_extractor from the... Hibernation File Fragments (decompressed and processed, not carved) Subsection 4.6 winprefetch Windows Prefetch files, file fragments (processed

  12. Anisotropic cosmological models with bulk viscosity and particle ...

    Indian Academy of Sciences (India)

    4.1.3 Ideal gas. In the case of an ideal gas. = 0 and pc = 0. Then eq. (2) becomes. ˙η + 3ηH = 0. (69). Equation (69), on integration gives η = η1t. −3/n,. (70) where η1 is an integrating constant. Equation (69) is the expression for particle creation density. This model has only bulk viscosity and bulk viscous stress is obtained as.

  13. Factors that may compromise bulk water distribution reliability

    OpenAIRE

    2012-01-01

    D.Ing. This thesis considers water supply and divides the water supply environment into three categories; the macro water supply environment, the water supply scheme and the consumers. Each of the categories is briefly explored in terms of the factors that may influence it. Subsequently, some of the unique features of a bulk water distribution system are dealt with, as well as different approaches related to bulk water distribution system design and assessment. One of these approaches, the...

  14. Does boundary quantum mechanics imply quantum mechanics in the bulk?

    Science.gov (United States)

    Kabat, Daniel; Lifschytz, Gilad

    2018-03-01

    Perturbative bulk reconstruction in AdS/CFT starts by representing a free bulk field ϕ (0) as a smeared operator in the CFT. A series of 1 /N corrections must be added to ϕ (0) to represent an interacting bulk field ϕ. These corrections have been determined in the literature from several points of view. Here we develop a new perspective. We show that correlation functions involving ϕ (0) suffer from ambiguities due to analytic continuation. As a result ϕ (0) fails to be a well-defined linear operator in the CFT. This means bulk reconstruction can be understood as a procedure for building up well-defined operators in the CFT which thereby singles out the interacting field ϕ. We further propose that the difficulty with defining ϕ (0) as a linear operator can be re-interpreted as a breakdown of associativity. Presumably ϕ (0) can only be corrected to become an associative operator in perturbation theory. This suggests that quantum mechanics in the bulk is only valid in perturbation theory around a semiclassical bulk geometry.

  15. Bulk density calculations from prompt gamma ray yield

    International Nuclear Information System (INIS)

    Naqvi, A.A.; Nagadi, M.M.; Al-Amoudi, O.S.B.; Maslehuddin, M.

    2006-01-01

    Full text: The gamma ray yield from a Prompt Gamma ray Neutron Activation Analysis (PGNAA) setup is a linear function of element concentration and neutron flux in a the sample with constant bulk density. If the sample bulk density varies as well, then the element concentration and the neutron flux has a nonlinear correlation with the gamma ray yield [1]. The measurement of gamma ray yield non-linearity from samples and a standard can be used to estimate the bulk density of the samples. In this study the prompt gamma ray yield from Blast Furnace Slag, Fly Ash, Silica Fumes and Superpozz cements samples have been measured as a function of their calcium and silicon concentration using KFUPM accelerator-based PGNAA setup [2]. Due to different bulk densities of the blended cement samples, the measured gamma ray yields have nonlinear correlation with calcium and silicon concentration of the samples. The non-linearity in the yield was observed to increase with gamma rays energy and element concentration. The bulk densities of the cement samples were calculated from ratio of gamma ray yield from blended cement and that from a Portland cement standard. The calculated bulk densities have good agreement with the published data. The result of this study will be presented

  16. Materials processing and machine applications of bulk HTS

    Science.gov (United States)

    Miki, M.; Felder, B.; Tsuzuki, K.; Xu, Y.; Deng, Z.; Izumi, M.; Hayakawa, H.; Morita, M.; Teshima, H.

    2010-12-01

    We report a refrigeration system for rotating machines associated with the enhancement of the trapped magnetic flux of bulk high-temperature superconductor (HTS) field poles. A novel cryogenic system was designed and fabricated. It is composed of a low-loss rotary joint connecting the rotor and a closed-cycle thermosiphon under a GM cryocooler using a refrigerant. Condensed neon gas was adopted as a suitable cryogen for the operation of HTS rotating machines with field poles composed of RE-Ba-Cu-O family materials, where RE is a rare-earth metal. Regarding the materials processing of the bulks HTS, thanks to the addition of magnetic particles to GdBa2Cu3O7 - d (Gd123) bulk superconductors an increase of more than 20% in the trapped magnetic flux density was achieved at liquid nitrogen temperature. Field-pole Gd123 bulks up to 46 mm in diameter were synthesized with the addition of Fe-B alloy magnetic particles and assembled into the synchronous machine rotor to be tested. Successful cooling of the magnetized rotor field poles down to 35 K and low-output-power rotating operation was achieved up to 720 rpm in the test machine with eight field-pole bulks. The present results show a substantial basis for making a prototype system of rotating machinery of applied HTS bulks.

  17. Materials processing and machine applications of bulk HTS

    Energy Technology Data Exchange (ETDEWEB)

    Miki, M; Felder, B; Tsuzuki, K; Xu, Y; Deng, Z; Izumi, M [Department of Marine Electronics and Mechanical Engineering, Tokyo University of Marine Science and Technology, 2-1-6, Etchu-jima, Koto-ku, Tokyo 135-8533 (Japan); Hayakawa, H [Kitano Seiki Co. Ltd, 7-17-3, Chuo, Ohta-ku, Tokyo 143-0024 (Japan); Morita, M; Teshima, H, E-mail: d082025@kaiyodai.ac.j [Nippon Steel Co. Ltd, 20-1, Shintomi, Huttsu-shi, Chiba 293-8511 (Japan)

    2010-12-15

    We report a refrigeration system for rotating machines associated with the enhancement of the trapped magnetic flux of bulk high-temperature superconductor (HTS) field poles. A novel cryogenic system was designed and fabricated. It is composed of a low-loss rotary joint connecting the rotor and a closed-cycle thermosiphon under a GM cryocooler using a refrigerant. Condensed neon gas was adopted as a suitable cryogen for the operation of HTS rotating machines with field poles composed of RE-Ba-Cu-O family materials, where RE is a rare-earth metal. Regarding the materials processing of the bulks HTS, thanks to the addition of magnetic particles to GdBa{sub 2}Cu{sub 3}O{sub 7-d} (Gd123) bulk superconductors an increase of more than 20% in the trapped magnetic flux density was achieved at liquid nitrogen temperature. Field-pole Gd123 bulks up to 46 mm in diameter were synthesized with the addition of Fe-B alloy magnetic particles and assembled into the synchronous machine rotor to be tested. Successful cooling of the magnetized rotor field poles down to 35 K and low-output-power rotating operation was achieved up to 720 rpm in the test machine with eight field-pole bulks. The present results show a substantial basis for making a prototype system of rotating machinery of applied HTS bulks.

  18. Carbon Nanotube Microarrays Grown on Nanoflake Substrates

    Science.gov (United States)

    Schmidt, Howard K.; Hauge, Robert H.; Pint, Cary; Pheasant, Sean

    2013-01-01

    This innovation consists of a new composition of matter where single-walled carbon nanotubes (SWNTs) are grown in aligned arrays from nanostructured flakes that are coated in Fe catalyst. This method of growth of aligned SWNTs, which can yield well over 400 percent SWNT mass per unit substrate mass, exceeds current yields for entangled SWNT growth. In addition, processing can be performed with minimal wet etching treatments, leaving aligned SWNTs with superior properties over those that exist in entangled mats. The alignment of the nanotubes is similar to that achieved in vertically aligned nanotubes, which are called "carpets. " Because these flakes are grown in a state where they are airborne in a reactor, these flakes, after growing SWNTs, are termed "flying carpets. " These flakes are created in a roll-to-roll evaporator system, where three subsequent evaporations are performed on a 100-ft (approx. =30-m) roll of Mylar. The first layer is composed of a water-soluble "release layer, " which can be a material such as NaCl. After depositing NaCl, the second layer involves 40 nm of supporting layer material . either Al2O3 or MgO. The thickness of the layer can be tuned to synthesize flakes that are larger or smaller than those obtained with a 40-nm deposition. Finally, the third layer consists of a thin Fe catalyst layer with a thickness of 0.5 nm. The thickness of this layer ultimately determines the diameter of SWNT growth, and a layer that is too thick will result in the growth of multiwalled carbon nanotubes instead of single-wall nanotubes. However, between a thickness of 0.5 nm to 1 nm, single-walled carbon nanotubes are known to be the primary constituent. After this three-layer deposition process, the Mylar is rolled through a bath of water, which allows catalyst-coated flakes to detach from the Mylar. The flakes are then collected and dried. The method described here for making such flakes is analogous to that which is used to make birefringent ink that is

  19. Unified bulk-boundary correspondence for band insulators

    Science.gov (United States)

    Rhim, Jun-Won; Bardarson, Jens H.; Slager, Robert-Jan

    2018-03-01

    The bulk-boundary correspondence, a topic of intensive research interest over the past decades, is one of the quintessential ideas in the physics of topological quantum matter. Nevertheless, it has not been proven in all generality and has in certain scenarios even been shown to fail, depending on the boundary profiles of the terminated system. Here, we introduce bulk numbers that capture the exact number of in-gap modes, without any such subtleties in one spatial dimension. Similarly, based on these 1D bulk numbers, we define a new 2D winding number, which we call the pole winding number, that specifies the number of robust metallic surface bands in the gap as well as their topological character. The underlying general methodology relies on a simple continuous extrapolation from the bulk to the boundary, while tracking the evolution of Green's function's poles in the vicinity of the bulk band edges. As a main result we find that all the obtained numbers can be applied to the known insulating phases in a unified manner regardless of the specific symmetries. Additionally, from a computational point of view, these numbers can be effectively evaluated without any gauge fixing problems. In particular, we directly apply our bulk-boundary correspondence construction to various systems, including 1D examples without a traditional bulk-boundary correspondence, and predict the existence of boundary modes on various experimentally studied graphene edges, such as open boundaries and grain boundaries. Finally, we sketch the 3D generalization of the pole winding number by in the context of topological insulators.

  20. High energy photoelectron spectroscopy in basic and applied science: Bulk and interface electronic structure

    Energy Technology Data Exchange (ETDEWEB)

    Knut, Ronny; Lindblad, Rebecka [Department of Physics and Astronomy, Uppsala University, SE-751 21 Uppsala (Sweden); Gorgoi, Mihaela [Helmholtz Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489 Berlin (Germany); Rensmo, Håkan [Department of Physics and Astronomy, Uppsala University, SE-751 21 Uppsala (Sweden); Karis, Olof, E-mail: olof.karis@physics.uu.se [Department of Physics and Astronomy, Uppsala University, SE-751 21 Uppsala (Sweden)

    2013-10-15

    Highlights: •We demonstrate how hard X-ray photoelectron spectroscopy can be used to investigate interface properties of multilayers. •By combining HAXPES and statistical methods we are able to provide quantitative analysis of the interface diffusion process. •We show how photoionization cross sections can be used to map partial density of states contributions to valence states. •We use HAXPES to provide insight into the valence electronic structure of e.g. multiferroics and dye-sensitized solar cells. -- Abstract: With the access of new high-performance electron spectrometers capable of analyzing electron energies up to the order of 10 keV, the interest for photoelectron spectroscopy has grown and many new applications of the technique in areas where electron spectroscopies were considered to have limited use have been demonstrated over the last few decades. The technique, often denoted hard X-ray photoelectron spectroscopy (HX-PES or HAXPES), to distinguish the experiment from X-ray photoelectron spectroscopy performed at lower energies, has resulted in an increasing interest in photoelectron spectroscopy in many areas. The much increased mean free path at higher kinetic energies, in combination with the elemental selectivity of the core level spectroscopies in general has led to this fact. It is thus now possible to investigate the electronic structure of materials with a substantially enhanced bulk sensitivity. In this review we provide examples from our own research using HAXPES which to date has been performed mainly at the HIKE facility at the KMC-1 beamline at HZB, Berlin. The review exemplifies the new opportunities using HAXPES to address both bulk and interface electronic properties in systems relevant for applications in magnetic storage, energy related research, but also in purely curiosity driven problems.

  1. High energy photoelectron spectroscopy in basic and applied science: Bulk and interface electronic structure

    International Nuclear Information System (INIS)

    Knut, Ronny; Lindblad, Rebecka; Gorgoi, Mihaela; Rensmo, Håkan; Karis, Olof

    2013-01-01

    Highlights: •We demonstrate how hard X-ray photoelectron spectroscopy can be used to investigate interface properties of multilayers. •By combining HAXPES and statistical methods we are able to provide quantitative analysis of the interface diffusion process. •We show how photoionization cross sections can be used to map partial density of states contributions to valence states. •We use HAXPES to provide insight into the valence electronic structure of e.g. multiferroics and dye-sensitized solar cells. -- Abstract: With the access of new high-performance electron spectrometers capable of analyzing electron energies up to the order of 10 keV, the interest for photoelectron spectroscopy has grown and many new applications of the technique in areas where electron spectroscopies were considered to have limited use have been demonstrated over the last few decades. The technique, often denoted hard X-ray photoelectron spectroscopy (HX-PES or HAXPES), to distinguish the experiment from X-ray photoelectron spectroscopy performed at lower energies, has resulted in an increasing interest in photoelectron spectroscopy in many areas. The much increased mean free path at higher kinetic energies, in combination with the elemental selectivity of the core level spectroscopies in general has led to this fact. It is thus now possible to investigate the electronic structure of materials with a substantially enhanced bulk sensitivity. In this review we provide examples from our own research using HAXPES which to date has been performed mainly at the HIKE facility at the KMC-1 beamline at HZB, Berlin. The review exemplifies the new opportunities using HAXPES to address both bulk and interface electronic properties in systems relevant for applications in magnetic storage, energy related research, but also in purely curiosity driven problems

  2. A new system for sodium flux growth of bulk GaN. Part I: System development

    Science.gov (United States)

    Von Dollen, Paul; Pimputkar, Siddha; Alreesh, Mohammed Abo; Albrithen, Hamad; Suihkonen, Sami; Nakamura, Shuji; Speck, James S.

    2016-12-01

    Though several methods exist to produce bulk crystals of gallium nitride (GaN), none have been commercialized on a large scale. The sodium flux method, which involves precipitation of GaN from a sodium-gallium melt supersaturated with nitrogen, offers potentially lower cost production due to relatively mild process conditions while maintaining high crystal quality. We successfully developed a novel apparatus for conducting crystal growth of bulk GaN using the sodium flux method which has advantages with respect to prior reports. A key task was to prevent sodium loss or migration from the growth environment while permitting N2 to access the growing crystal. We accomplished this by implementing a reflux condensing stem along with a reusable capsule containing a hermetic seal. The reflux condensing stem also enabled direct monitoring of the melt temperature, which has not been previously reported for the sodium flux method. Furthermore, we identified and utilized molybdenum and the molybdenum alloy TZM as a material capable of directly containing the corrosive sodium-gallium melt. This allowed implementation of a crucible-free system, which may improve process control and potentially lower crystal impurity levels. Nucleation and growth of parasitic GaN ("PolyGaN") on non-seed surfaces occurred in early designs. However, the addition of carbon in later designs suppressed PolyGaN formation and allowed growth of single crystal GaN. Growth rates for the (0001) Ga face (+c-plane) were up to 14 μm/h while X-ray omega rocking (ω-XRC) curve full width half-max values were 731″ for crystals grown using a later system design. Oxygen levels were high, >1019 atoms/cm3, possibly due to reactor cleaning and handling procedures.

  3. Cu2ZnSnS4 thin films grown by flash evaporation and subsequent annealing in Ar atmosphere

    International Nuclear Information System (INIS)

    Caballero, R.; Izquierdo-Roca, V.; Merino, J.M.; Friedrich, E.J.; Climent-Font, A.; Saucedo, E.; 2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain))" data-affiliation=" (IREC, Catalonia Institute for Energy Research, C. Jardins de les Dones de Negre 1, Sant Adriá del Besòs, E-08930 Barcelona (Spain); IN2UB, Departament d'Electrònica, Universitat de Barcelona, C. Martí i Franquès 1, E-08028 Barcelona (Spain))" >Pérez-Rodríguez, A.; León, M.

    2013-01-01

    A study of Cu 2 ZnSnS 4 thin films grown by flash evaporation and subsequently annealed in Ar atmosphere has been carried out. Prior to thin film deposition, Cu 2 ZnSnS 4 bulk compounds with stoichiometric and Zn-rich compositions were synthesized as evaporation sources. The characteristics of the bulk compounds and thin films were investigated by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and elastic back scattering. Cu 2 ZnSnS 4 deposited films contain lower concentrations of Zn than the bulk compounds used as evaporation sources, which is related to a preferential Zn re-evaporation during the deposition process. The desired kesterite composition for solar cell applications was achieved by using a Zn-rich compound as the evaporation source plus a thermal treatment at 620 °C in Ar atmosphere. - Highlights: ► Cu 2 ZnSnS 4 (CZTS) thin films by flash evaporation + annealing in Ar atmosphere ► Difficulty of growing a single phase kesterite material ► X-ray diffraction and Raman spectroscopy to identify the different phases ► Importance of the starting film composition to get the desired CZTS material ► Annealing treatment to obtain the optimum material to be used for CZTS solar cells

  4. Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi{sub 2}Te{sub 2}Se

    Energy Technology Data Exchange (ETDEWEB)

    Kushwaha, S. K., E-mail: kushwaha@princeton.edu; Gibson, Q. D.; Cava, R. J. [Department of Chemistry, Princeton University, Princeton, New Jersey 08544 (United States); Xiong, J.; Ong, N. P. [Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States); Pletikosic, I. [Department of Physics, Princeton University, Princeton, New Jersey 08544 (United States); Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973 (United States); Weber, A. P. [National Synchrotron Light Source, Brookhaven National Lab, Upton, New York 11973 (United States); Fedorov, A. V. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Valla, T. [Condensed Matter Physics and Materials Science Department, Brookhaven National Lab, Upton, New York 11973 (United States)

    2014-04-14

    A comparative study of the properties of topological insulator Bi{sub 2}Te{sub 2}Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10{sup 14} cm{sup −3}. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E{sub F}) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E{sub F}. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.

  5. Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se

    International Nuclear Information System (INIS)

    Kushwaha, S. K.; Gibson, Q. D.; Cava, R. J.; Xiong, J.; Ong, N. P.; Pletikosic, I.; Weber, A. P.; Fedorov, A. V.; Valla, T.

    2014-01-01

    A comparative study of the properties of topological insulator Bi 2 Te 2 Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn doping. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 × 10 14  cm −3 . Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (E F ) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, which the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near E F . Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed

  6. Longitudinal and bulk viscosities of Lennard-Jones fluids

    Science.gov (United States)

    Tankeshwar, K.; Pathak, K. N.; Ranganathan, S.

    1996-12-01

    Expressions for the longitudinal and bulk viscosities have been derived using Green Kubo formulae involving the time integral of the longitudinal and bulk stress autocorrelation functions. The time evolution of stress autocorrelation functions are determined using the Mori formalism and a memory function which is obtained from the Mori equation of motion. The memory function is of hyperbolic secant form and involves two parameters which are related to the microscopic sum rules of the respective autocorrelation function. We have derived expressions for the zeroth-, second-and fourth- order sum rules of the longitudinal and bulk stress autocorrelation functions. These involve static correlation functions up to four particles. The final expressions for these have been put in a form suitable for numerical calculations using low- order decoupling approximations. The numerical results have been obtained for the sum rules of longitudinal and bulk stress autocorrelation functions. These have been used to calculate the longitudinal and bulk viscosities and time evolution of the longitudinal stress autocorrelation function of the Lennard-Jones fluids over wide ranges of densities and temperatures. We have compared our results with the available computer simulation data and found reasonable agreement.

  7. Evaluation and remediation of bulk soap dispensers for biofilm.

    Science.gov (United States)

    Lorenz, Lindsey A; Ramsay, Bradley D; Goeres, Darla M; Fields, Matthew W; Zapka, Carrie A; Macinga, David R

    2012-01-01

    Recent studies evaluating bulk soap in public restroom soap dispensers have demonstrated up to 25% of open refillable bulk-soap dispensers were contaminated with ~ 6 log(10)(CFU ml(-1)) heterotrophic bacteria. In this study, plastic counter-mounted, plastic wall-mounted and stainless steel wall-mounted dispensers were analyzed for suspended and biofilm bacteria using total cell and viable plate counts. Independent of dispenser type or construction material, the bulk soap was contaminated with 4-7 log(10)(CFU ml(-1)) bacteria, while 4-6 log(10)(CFU cm(-2)) biofilm bacteria were isolated from the inside surfaces of the dispensers (n = 6). Dispenser remediation studies, including a 10 min soak with 5000 mg l(-1) sodium hypochlorite, were then conducted to determine the efficacy of cleaning and disinfectant procedures against established biofilms. The testing showed that contamination of the bulk soap returned to pre-test levels within 7-14 days. These results demonstrate biofilm is present in contaminated bulk-soap dispensers and remediation studies to clean and sanitize the dispensers are temporary.

  8. Development of a superconducting bulk magnet for NMR and MRI.

    Science.gov (United States)

    Nakamura, Takashi; Tamada, Daiki; Yanagi, Yousuke; Itoh, Yoshitaka; Nemoto, Takahiro; Utumi, Hiroaki; Kose, Katsumi

    2015-10-01

    A superconducting bulk magnet composed of six vertically stacked annular single-domain c-axis-oriented Eu-Ba-Cu-O crystals was energized to 4.74 T using a conventional superconducting magnet for high-resolution NMR spectroscopy. Shim coils, gradient coils, and radio frequency coils for high resolution NMR and MRI were installed in the 23 mm-diameter room-temperature bore of the bulk magnet. A 6.9 ppm peak-to-peak homogeneous region suitable for MRI was achieved in the central cylindrical region (6.2 mm diameter, 9.1 mm length) of the bulk magnet by using a single layer shim coil. A 21 Hz spectral resolution that can be used for high resolution NMR spectroscopy was obtained in the central cylindrical region (1.3 mm diameter, 4 mm length) of the bulk magnet by using a multichannel shim coil. A clear 3D MR image dataset of a chemically fixed mouse fetus with (50 μm)(3) voxel resolution was obtained in 5.5 h. We therefore concluded that the cryogen-free superconducting bulk magnet developed in this study is useful for high-resolution desktop NMR, MRI and mobile NMR device. Copyright © 2015 Elsevier Inc. All rights reserved.

  9. Large-scale HTS bulks for magnetic application

    Science.gov (United States)

    Werfel, Frank N.; Floegel-Delor, Uta; Riedel, Thomas; Goebel, Bernd; Rothfeld, Rolf; Schirrmeister, Peter; Wippich, Dieter

    2013-01-01

    ATZ Company has constructed about 130 HTS magnet systems using high-Tc bulk magnets. A key feature in scaling-up is the fabrication of YBCO melts textured multi-seeded large bulks with three to eight seeds. Except of levitation, magnetization, trapped field and hysteresis, we review system engineering parameters of HTS magnetic linear and rotational bearings like compactness, cryogenics, power density, efficiency and robust construction. We examine mobile compact YBCO bulk magnet platforms cooled with LN2 and Stirling cryo-cooler for demonstrator use. Compact cryostats for Maglev train operation contain 24 pieces of 3-seed bulks and can levitate 2500-3000 N at 10 mm above a permanent magnet (PM) track. The effective magnetic distance of the thermally insulated bulks is 2 mm only; the stored 2.5 l LN2 allows more than 24 h operation without refilling. 34 HTS Maglev vacuum cryostats are manufactured tested and operate in Germany, China and Brazil. The magnetic levitation load to weight ratio is more than 15, and by group assembling the HTS cryostats under vehicles up to 5 t total loads levitated above a magnetic track is achieved.

  10. Mass production of bulk artificial nacre with excellent mechanical properties.

    Science.gov (United States)

    Gao, Huai-Ling; Chen, Si-Ming; Mao, Li-Bo; Song, Zhao-Qiang; Yao, Hong-Bin; Cölfen, Helmut; Luo, Xi-Sheng; Zhang, Fu; Pan, Zhao; Meng, Yu-Feng; Ni, Yong; Yu, Shu-Hong

    2017-08-18

    Various methods have been exploited to replicate nacre features into artificial structural materials with impressive structural and mechanical similarity. However, it is still very challenging to produce nacre-mimetics in three-dimensional bulk form, especially for further scale-up. Herein, we demonstrate that large-sized, three-dimensional bulk artificial nacre with comprehensive mimicry of the hierarchical structures and the toughening mechanisms of natural nacre can be facilely fabricated via a bottom-up assembly process based on laminating pre-fabricated two-dimensional nacre-mimetic films. By optimizing the hierarchical architecture from molecular level to macroscopic level, the mechanical performance of the artificial nacre is superior to that of natural nacre and many engineering materials. This bottom-up strategy has no size restriction or fundamental barrier for further scale-up, and can be easily extended to other material systems, opening an avenue for mass production of high-performance bulk nacre-mimetic structural materials in an efficient and cost-effective way for practical applications.Artificial materials that replicate the mechanical properties of nacre represent important structural materials, but are difficult to produce in bulk. Here, the authors exploit the bottom-up assembly of 2D nacre-mimetic films to fabricate 3D bulk artificial nacre with an optimized architecture and excellent mechanical properties.

  11. Bulk viscosity, interaction and the viability of phantom solutions

    Energy Technology Data Exchange (ETDEWEB)

    Leyva, Yoelsy; Sepulveda, Mirko [Universidad de Tarapaca, Departamento de Fisica, Facultad de Ciencias, Arica (Chile)

    2017-06-15

    We study the dynamics of a bulk viscosity model in the Eckart approach for a spatially flat Friedmann-Robertson-Walker (FRW) Universe. We have included radiation and dark energy, assumed as perfect fluids, and dark matter treated as an imperfect fluid having bulk viscosity. We also introduce an interaction term between the dark matter and dark energy components. Considering that the bulk viscosity is proportional to the dark matter energy density and imposing a complete cosmological dynamics, we find bounds on the bulk viscosity in order to reproduce a matter-dominated era (MDE). This constraint is independent of the interaction term. Some late time phantom solutions are mathematically possible. However, the constraint imposed by a MDE restricts the interaction parameter, in the phantom solutions, to a region consistent with a null value, eliminating the possibility of late time stable solutions with w < -1. From the different cases that we study, the only possible scenario, with bulk viscosity and interaction term, belongs to the quintessence region. In the latter case, we find bounds on the interaction parameter compatible with latest observational data. (orig.)

  12. Running with rugby balls: bulk renormalization of codimension-2 branes

    Science.gov (United States)

    Williams, M.; Burgess, C. P.; van Nierop, L.; Salvio, A.

    2013-01-01

    We compute how one-loop bulk effects renormalize both bulk and brane effective interactions for geometries sourced by codimension-two branes. We do so by explicitly integrating out spin-zero, -half and -one particles in 6-dimensional Einstein-Maxwell-Scalar theories compactified to 4 dimensions on a flux-stabilized 2D geometry. (Our methods apply equally well for D dimensions compactified to D - 2 dimensions, although our explicit formulae do not capture all divergences when D > 6.) The renormalization of bulk interactions are independent of the boundary conditions assumed at the brane locations, and reproduce standard heat-kernel calculations. Boundary conditions at any particular brane do affect how bulk loops renormalize this brane's effective action, but not the renormalization of other distant branes. Although we explicitly compute our loops using a rugby ball geometry, because we follow only UV effects our results apply more generally to any geometry containing codimension-two sources with conical singularities. Our results have a variety of uses, including calculating the UV sensitivity of one-loop vacuum energy seen by observers localized on the brane. We show how these one-loop effects combine in a surprising way with bulk back-reaction to give the complete low-energy effective cosmological constant, and comment on the relevance of this calculation to proposed applications of codimension-two 6D models to solutions of the hierarchy and cosmological constant problems.

  13. Bulk-edge correspondence in topological transport and pumping

    Science.gov (United States)

    Imura, Ken-Ichiro; Yoshimura, Yukinori; Fukui, Takahiro; Hatsugai, Yasuhiro

    2018-03-01

    The bulk-edge correspondence (BEC) refers to a one-to-one relation between the bulk and edge properties ubiquitous in topologically nontrivial systems. Depending on the setup, BEC manifests in different forms and govern the spectral and transport properties of topological insulators and semimetals. Although the topological pump is theoretically old, BEC in the pump has been established just recently [1] motivated by the state-of-the-art experiments using cold atoms [2, 3]. The center of mass (CM) of a system with boundaries shows a sequence of quantized jumps in the adiabatic limit associated with the edge states. Despite that the bulk is adiabatic, the edge is inevitably non-adiabatic in the experimental setup or in any numerical simulations. Still the pumped charge is quantized and carried by the bulk. Its quantization is guaranteed by a compensation between the bulk and edges. We show that in the presence of disorder the pumped charge continues to be quantized despite the appearance of non-quantized jumps.

  14. Delocalization of brane gravity by a bulk black hole

    International Nuclear Information System (INIS)

    Seahra, Sanjeev S; Clarkson, Chris; Maartens, Roy

    2005-01-01

    We investigate the analogue of the Randall-Sundrum braneworld in the case when the bulk contains a black hole. Instead of the static vacuum Minkowski brane of the RS model, we have an Einstein static vacuum brane. We find that the presence of the bulk black hole has a dramatic effect on the gravity that is felt by brane observers. In the RS model, the 5D graviton has a stable localized zero mode that reproduces 4D gravity on the brane at low energies. With a bulk black hole, there is no such solution-gravity is delocalized by the 5D horizon. However, the brane does support a discrete spectrum of metastable massive bound states, or quasinormal modes, as was recently shown to be the case in the RS scenario. These states should dominate the high frequency component of the bulk gravity wave spectrum on a cosmological brane. We expect our results to generalize to any bulk spacetime containing a Killing horizon. (letter to the editor)

  15. Color of bulk-fill composite resin restorative materials.

    Science.gov (United States)

    Barutcigil, Çağatay; Barutcigil, Kubilay; Özarslan, Mehmet Mustafa; Dündar, Ayşe; Yilmaz, Burak

    2018-03-01

    To evaluate the color stability of novel bulk-fill composite resins. Color measurements of a nanohybrid composite resin (Z550) and 3 bulk-fill composite resins (BLK, AFX, XTF; n = 45) were performed before polymerization. After polymerization, color measurements were repeated and specimens were immersed in distilled water or red wine, or coffee. Color change [CIEDE2000 (ΔE 00 )] was calculated after 24 h, 1 and 3 weeks. Data were analyzed with Kruskal-Wallis, Mann-Whitney U and Wilcoxon tests (α = 0.05). Color changes observed after polymerization were significant for all groups. Color changes observed in distilled water for Z550 and AFX were significant. Color changes after stored in red wine and coffee were significant for all groups. Bulk-fill composite resin color change increased over time for all groups in red wine and coffee (P composite resin and bulk-fill composite resins. AFX had the highest color change in distilled water. The color of tested bulk-fill composite resins significantly changed after immersion in beverages and over time. Color change observed with the nanohybrid composite resin after 1 week was stable. Clinicians should keep in mind that tested composite resins may change color when exposed to water and significantly change color immediately after they are polymerized. In addition, the color change continues over time should the patient is a coffee and/or red wine consumer. © 2017 Wiley Periodicals, Inc.

  16. Photocarrier dynamics in monolayer phosphorene and bulk black phosphorus.

    Science.gov (United States)

    Zereshki, Peymon; Wei, Yaqing; Ceballos, Frank; Bellus, Matthew Z; Lane, Samuel D; Pan, Shudi; Long, Run; Zhao, Hui

    2018-06-13

    We report a combined theoretical and experimental study on photocarrier dynamics in monolayer phosphorene and bulk black phosphorus. Samples of monolayer phosphorene and bulk black phosphorus were fabricated by mechanical exfoliation, identified according to their reflective contrasts, and protected by covering them with hexagonal boron nitride layers. Photocarrier dynamics in these samples was studied by an ultrafast pump-probe technique. The photocarrier lifetime of monolayer phosphorene was found to be about 700 ps, which is about 9 times longer than that of bulk black phosphorus. This trend was reproduced in our calculations based on ab initio nonadiabatic molecular dynamics combined with time-domain density functional theory in the Kohn-Sham representation, and can be attributed to the smaller bandgap and stronger nonadiabatic coupling in bulk. The transient absorption response was also found to be dependent on the sample orientation with respect to the pump polarization, which is consistent with the previously reported anisotropic absorption of phosphorene. In addition, an oscillating component of the differential reflection signal at early probe delays was observed in the bulk sample and was attributed to the layer-breathing phonon mode with an energy of about 1 meV and a decay time of about 1.35 ps. These results provide valuable information for application of monolayer phosphorene in optoelectronics.

  17. Brane big bang brought on by a bulk bubble

    International Nuclear Information System (INIS)

    Gen, Uchida; Ishibashi, Akihiro; Tanaka, Takahiro

    2002-01-01

    We propose an alternative inflationary universe scenario in the context of Randall-Sundrum braneworld cosmology. In this new scenario the existence of extra dimension(s) plays an essential role. First, the brane universe is initially in the inflationary phase driven by the effective cosmological constant induced by a small mismatch between the vacuum energy in the five-dimensional bulk and the brane tension. This mismatch arises since the bulk is initially in a false vacuum. Then, false vacuum decay occurs, nucleating a true vacuum bubble with negative energy inside the bulk. The nucleated bubble expands in the bulk and consequently hits the brane, causing a hot big-bang brane universe of the Randall-Sundrum type. Here, the termination of the inflationary phase is due to the change of the bulk vacuum energy. The bubble kinetic energy heats up the universe. As a simple realization, we propose a model in which we assume an interaction between the brane and the bubble. We derive the constraints on the model parameters taking into account the following requirements: solving the flatness problem, no force which prohibits the bubble from colliding with the brane, a sufficiently high reheating temperature for the standard nucleosynthesis to work, and the recovery of Newton's law up to 1 mm. We find that a fine-tuning is needed in order to satisfy the first and the second requirements simultaneously, although the other constraints are satisfied in a wide range of the model parameters

  18. Depth of cure of bulk-fill flowable composite resins.

    Science.gov (United States)

    Pedalino, Inaam; Hartup, Grant R; Vandewalle, Kraig S

    2015-01-01

    In recent years, manufacturers have introduced flowable composite resins that reportedly can be placed in increments of 4 mm or greater. The purpose of this study was to evaluate the depth of cure of bulk-fill flowable composite resins (SureFil SDR Flow, Grandio Flow, and Venus Bulk Fill) and a conventional flowable composite resin (Revolution Formula 2). Depth of cure was measured in terms of bottom-maximum Knoop hardness number (KHN) ratios and the International Organization for Standardization (ISO) 4049 scrape technique. Shades A2 and A3 of SureFil SDR Flow, Grandio Flow, and Revolution Formula 2 were tested. Venus Bulk Fill was tested in its only available shade (universal). Specimens in thicknesses of 2, 3, 4, 5, and 6 mm were polymerized for 20 or 40 seconds, and a hardness tester was used to determine the hardness ratios for each shade at each thickness. For the scraping technique, after specimens were exposed to the curing light, unpolymerized composite resin was removed with a plastic instrument, the polymerized composite was measured, and the length was divided by 2 per ISO guidelines. According to the KHN ratios and the scrape test, Venus Bulk Fill predictably exceeded the manufacturer's claim of a 4-mm depth of cure at both 20 and 40 seconds of curing time. The overall results for depth of cure showed that Venus Bulk Fill ≥ SureFil SDR Flow ≥ Grandio Flow ≥ Revolution Formula 2.

  19. assessment of cadmium and lead in soil and tomatoes grown

    African Journals Online (AJOL)

    MAHMUD IMAM

    Transfer of Heavy Metals from Soil to Lettuce (Lactuca sativa) grown in irrigated farmlands of ... respectively being the highest elements absorbed by the lettuce samples from the irrigated .... radioactive elements and organic chemicals,.

  20. Metals in leafy vegetables grown in Addis Ababa and toxicological ...

    African Journals Online (AJOL)

    Metals in leafy vegetables grown in Addis Ababa and toxicological implications. ... the leafy vegetables is attributed to plant differences in tolerance to heavy metals. ... Treatment of industrial effluents and phyto-extraction of excess metals from ...

  1. Efficient Bulk Operations on Dynamic R-Trees

    DEFF Research Database (Denmark)

    Arge, Lars Allan; Hinrichs, Klaus; Vahrenhold, Jan

    2002-01-01

    In recent years there has been an upsurge of interest in spatial databases. A major issue is how to manipulate efficiently massive amounts of spatial data stored on disk in multidimensional spatial indexes (data structures). Construction of spatial indexes (bulk loading ) has been studied...... intensively in the database community. The continuous arrival of massive amounts of new data makes it important to update existing indexes (bulk updating ) efficiently. In this paper we present a simple, yet efficient, technique for performing bulk update and query operations on multidimensional indexes. We...... present our technique in terms of the so-called R-tree and its variants, as they have emerged as practically efficient indexing methods for spatial data. Our method uses ideas from the buffer tree lazy buffering technique and fully utilizes the available internal memory and the page size of the operating...

  2. Preparation of bulk superhard B-C-N nanocomposite compact

    Science.gov (United States)

    Zhao, Yusheng [Los Alamos, NM; He, Duanwei [Sichuan, CN

    2011-05-10

    Bulk, superhard, B--C--N nanocomposite compacts were prepared by ball milling a mixture of graphite and hexagonal boron nitride, encapsulating the ball-milled mixture at a pressure in a range of from about 15 GPa to about 25 GPa, and sintering the pressurized encapsulated ball-milled mixture at a temperature in a range of from about 1800-2500 K. The product bulk, superhard, nanocomposite compacts were well sintered compacts with nanocrystalline grains of at least one high-pressure phase of B--C--N surrounded by amorphous diamond-like carbon grain boundaries. The bulk compacts had a measured Vicker's hardness in a range of from about 41 GPa to about 68 GPa.

  3. On-line and bulk analysis for the resource industries

    International Nuclear Information System (INIS)

    Lim, C.S.; Sowerby, B.D.; Tickner, J.R.; Madsen, I.C.

    2001-01-01

    Nuclear techniques are the basis of many CSIRO on-line and bulk analysis systems that are now widely used in the mineral and energy industries. The continuous analysis and rapid response of these systems have led to improved control of mining, processing and blending operations. This paper reviews recent developments in neutron, gamma-ray and X-ray techniques for on-line and bulk analysis by CSIRO Minerals including neutron techniques for the on-conveyor belt determination of the composition of cement raw meal, the on-line analysis of composition in pyrometallurgical applications, the on-conveyor belt determination of ash in coal, and the rapid and accurate determination of gold in bulk laboratory samples. The paper also discusses a new gamma-ray technique for the on-line determination of ash in coal and the application of X-ray diffraction techniques for the on-line determination of mineralogy in the cement industry

  4. Polish model of electric energy market-bulk energy tariff

    International Nuclear Information System (INIS)

    Malysa, H.

    1994-01-01

    The key problem of electric energy supply industry reform is gradually launching a competitive wholesale generation market since 1994. In process of this transformation the important role plays bulk energy supply tariff in electricity transactions between Polish Power Grid Company and distribution and retail supply companies (distributors). Premises, factors and constrains having influence on shaping of the bulk energy supply tariff are presented. A brief outline of economic foundation for calculation of demand charges and energy rate is given. Particular attention has been paid to description of bulk energy supply tariff structure. The scope and manner of adjustment of this tariff to circumstances and constrains in the initial stage of the wholesale electric energy market have been described as well. (author). 8 refs

  5. Palladium diffusion into bulk copper via the (100) surface

    Energy Technology Data Exchange (ETDEWEB)

    Bussmann, E; Kellogg, G L [Sandia National Laboratories, Albuquerque, NM 87185 (United States); Sun, J; Pohl, K [Department of Physics and Materials Science Program, University of New Hampshire, Durham, NH 03824 (United States)

    2009-08-05

    Using low-energy electron microscopy, we measure the diffusion of Pd into bulk Cu at the Cu(100) surface. Interdiffusion is tracked by measuring the dissolution of the Cu(100)-c(2 x 2)-Pd surface alloy during annealing (T>240 deg. C). The activation barrier for Pd diffusion from the surface alloy into the bulk is determined to be (1.8 +- 0.6) eV. During annealing, we observe the growth of a new layer of Cu near step edges. Under this new Cu layer, dilute Pd remaining near the surface develops a layered structure similar to the Cu{sub 3}Pd L 1{sub 2} bulk alloy phase.

  6. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    Energy Technology Data Exchange (ETDEWEB)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  7. Quality and Quantity Evaluations of Shade Grown Forages

    Science.gov (United States)

    K. P. Ladyman; M. S. Kerley; R. L. Kallenbach; H. E. Garrett; J. W. Van Sambeek; N. E. Navarrete-Tindall

    2003-01-01

    Seven legumes were grown during the summer-fall of 2000, at the Horticulture and Agroforestry Research Center (39? 01 ' N, 92? 46' W) near New Franklin, MO. The forages were grown in 7.5L white pots placed on light-colored gravel either under full sunlight, 45% sunlight, or 20% sunlight created by a shade cloth over a rectangular frame. Drip irrigation was...

  8. Law Enforcement Efforts to Control Domestically Grown Marijuana.

    Science.gov (United States)

    1984-05-25

    mari- juana grown indoors , the involvement of large criminal organizations, and the patterns of domestic marijuana distribution. In response to a GAO...information is particularly important if the amount of marijuana grown indoors and the number of large-scale cultiva- tion and distribution organizations... marijuana indoors is becoming increasingly popular. A 1982 narcotics assessment by the Western States Information Network (WSIN)2 of marijuana

  9. Temperature measurement of RE123 bulk superconductors on magnetizing process

    International Nuclear Information System (INIS)

    Yokoyama, K.; Kaneyama, M.; Oka, T.; Fujishiro, H.; Noto, K.

    2004-01-01

    We study on the magnetization behavior of to magnetize RE123 bulk superconductors to apply it as strong magnets. Through magnetizing process, the temperature of bulk superconductors is raised by pinning loss caused by the magnetic fluxes motion (e.g. flux jump of flux flow), and the trapped field is decreased. This paper presents the measurement of temperature changes of Sm123 bulk superconductors during the exciting process by iteratively magnetizing pulsed-field operation with reducing amplitudes (IMRA) method. Five thermocouples are put on the surface of Sm123 bulk superconductor of 46 mm in diameter. The temperatures at the center, on the growth sector boundary (GSB) line and in the sector region surrounded by GSB's line (inter-GSB region) are monitored. The temperature at a cold stage is also measured. A Hall sensor is attached near the center thermocouple to measure the trapped field. After a bulk superconductor is cooled by the GM type refrigerator until 40 K, iterative pulsed-fields of 2.32-5.42 T are applied by a magnetizing coil. When high magnetic field of 5.42 T is applied, a temperature of bulk superconductor reaches to 72.4 K and the magnetic field distribution has C form with which a part of circle is dented, and then, a trapped field is 2.28 T. When a lower magnetic field of 4.64 T is applied, a maximum temperature is 68.3 K and a trapped field is raised to 2.70 T, and moreover, the distribution becomes round shape like field-cooling method (FC). We showed clearly that heat generation by pinning loss was related to the mechanism of magnetic field capture

  10. Large-scale HTS bulks for magnetic application

    International Nuclear Information System (INIS)

    Werfel, Frank N.; Floegel-Delor, Uta; Riedel, Thomas; Goebel, Bernd; Rothfeld, Rolf; Schirrmeister, Peter; Wippich, Dieter

    2013-01-01

    Highlights: ► ATZ Company has constructed about 130 HTS magnet systems. ► Multi-seeded YBCO bulks joint the way for large-scale application. ► Levitation platforms demonstrate “superconductivity” to a great public audience (100 years anniversary). ► HTS magnetic bearings show forces up to 1 t. ► Modular HTS maglev vacuum cryostats are tested for train demonstrators in Brazil, China and Germany. -- Abstract: ATZ Company has constructed about 130 HTS magnet systems using high-Tc bulk magnets. A key feature in scaling-up is the fabrication of YBCO melts textured multi-seeded large bulks with three to eight seeds. Except of levitation, magnetization, trapped field and hysteresis, we review system engineering parameters of HTS magnetic linear and rotational bearings like compactness, cryogenics, power density, efficiency and robust construction. We examine mobile compact YBCO bulk magnet platforms cooled with LN 2 and Stirling cryo-cooler for demonstrator use. Compact cryostats for Maglev train operation contain 24 pieces of 3-seed bulks and can levitate 2500–3000 N at 10 mm above a permanent magnet (PM) track. The effective magnetic distance of the thermally insulated bulks is 2 mm only; the stored 2.5 l LN 2 allows more than 24 h operation without refilling. 34 HTS Maglev vacuum cryostats are manufactured tested and operate in Germany, China and Brazil. The magnetic levitation load to weight ratio is more than 15, and by group assembling the HTS cryostats under vehicles up to 5 t total loads levitated above a magnetic track is achieved

  11. Large-scale HTS bulks for magnetic application

    Energy Technology Data Exchange (ETDEWEB)

    Werfel, Frank N., E-mail: werfel@t-online.de [Adelwitz Technologiezentrum GmbH (ATZ), Rittergut Adelwitz 16, 04886 Arzberg-Adelwitz (Germany); Floegel-Delor, Uta; Riedel, Thomas; Goebel, Bernd; Rothfeld, Rolf; Schirrmeister, Peter; Wippich, Dieter [Adelwitz Technologiezentrum GmbH (ATZ), Rittergut Adelwitz 16, 04886 Arzberg-Adelwitz (Germany)

    2013-01-15

    Highlights: ► ATZ Company has constructed about 130 HTS magnet systems. ► Multi-seeded YBCO bulks joint the way for large-scale application. ► Levitation platforms demonstrate “superconductivity” to a great public audience (100 years anniversary). ► HTS magnetic bearings show forces up to 1 t. ► Modular HTS maglev vacuum cryostats are tested for train demonstrators in Brazil, China and Germany. -- Abstract: ATZ Company has constructed about 130 HTS magnet systems using high-Tc bulk magnets. A key feature in scaling-up is the fabrication of YBCO melts textured multi-seeded large bulks with three to eight seeds. Except of levitation, magnetization, trapped field and hysteresis, we review system engineering parameters of HTS magnetic linear and rotational bearings like compactness, cryogenics, power density, efficiency and robust construction. We examine mobile compact YBCO bulk magnet platforms cooled with LN{sub 2} and Stirling cryo-cooler for demonstrator use. Compact cryostats for Maglev train operation contain 24 pieces of 3-seed bulks and can levitate 2500–3000 N at 10 mm above a permanent magnet (PM) track. The effective magnetic distance of the thermally insulated bulks is 2 mm only; the stored 2.5 l LN{sub 2} allows more than 24 h operation without refilling. 34 HTS Maglev vacuum cryostats are manufactured tested and operate in Germany, China and Brazil. The magnetic levitation load to weight ratio is more than 15, and by group assembling the HTS cryostats under vehicles up to 5 t total loads levitated above a magnetic track is achieved.

  12. Bulk material engineering and procurement management of NPS

    International Nuclear Information System (INIS)

    Fu Sanhong; Fan Kai

    2005-01-01

    In a nuclear power project, bulk material is often not in an outstanding position, compared to equipment, yet bulk material is one of most difficult part in engineering and procurement management. If the schedule is not in good control, it will seriously hamper the progress of the whole project. The article explores bulk material engineering and procurement management of NPS, illustrated with tables and graphs. First, major difficult aspects of bulk material procurement are described. On one hand, bulk material is really bulky in kind. We must have detail information of manufacturers, manufacture duration, and take good control of bidding schedule. On the other hand, when an order is placed, we need to make clear everything in the procurement package, such as material types, delivery batches, quantity of each batch and delivery schedule, which is a tremendous work. Then, a schedule conflict is analyzed: when an order is placed, the detail type and quantity cannot be defined (since the construction design is not finished yet). To settle this conflict, the concept 'Requirement Schedule Curve' is brought forward, along with the calculation method. To get this curve, we need to make use of the technical data of the reference power station, along with the site construction schedule, to produce a site quantity requirement curve varying from time, for each type of material. Last, based on the 'Requirement Schedule Curve', we are able to build a unified database to control the engineering, procurement, manufacturing and delivery schedule, so as to procure precisely, manufacture on time, and optimize the storage. In this way, the accurate control of bulk material engineering and procurement schedule can be achieved. (authors)

  13. Genetic Variation among Staphylococcus aureus Strains from Norwegian Bulk Milk

    Science.gov (United States)

    Jørgensen, H. J.; Mørk, T.; Caugant, D. A.; Kearns, A.; Rørvik, L. M.

    2005-01-01

    Strains of Staphylococcus aureus obtained from bovine (n = 117) and caprine (n = 114) bulk milk were characterized and compared with S. aureus strains from raw-milk products (n = 27), bovine mastitis specimens (n = 9), and human blood cultures (n = 39). All isolates were typed by pulsed-field gel electrophoresis (PFGE). In addition, subsets of isolates were characterized using multilocus sequence typing (MLST), multiplex PCR (m-PCR) for genes encoding nine of the staphylococcal enterotoxins (SE), and the cloverleaf method for penicillin resistance. A variety of genotypes were observed, and greater genetic diversity was found among bovine than caprine bulk milk isolates. Certain genotypes, with a wide geographic distribution, were common to bovine and caprine bulk milk and may represent ruminant-specialized S. aureus. Isolates with genotypes indistinguishable from those of strains from ruminant mastitis were frequently found in bulk milk, and strains with genotypes indistinguishable from those from bulk milk were observed in raw-milk products. This indicates that S. aureus from infected udders may contaminate bulk milk and, subsequently, raw-milk products. Human blood culture isolates were diverse and differed from isolates from other sources. Genotyping by PFGE, MLST, and m-PCR for SE genes largely corresponded. In general, isolates with indistinguishable PFGE banding patterns had the same SE gene profile and isolates with identical SE gene profiles were placed together in PFGE clusters. Phylogenetic analyses agreed with the division of MLST sequence types into clonal complexes, and isolates within the same clonal complex had the same SE gene profile. Furthermore, isolates within PFGE clusters generally belonged to the same clonal complex. PMID:16332822

  14. Mechanisms of the anomalous Pockels effect in bulk water

    Science.gov (United States)

    Yukita, Shunpei; Suzuki, Yuto; Shiokawa, Naoyuki; Kobayashi, Takayoshi; Tokunaga, Eiji

    2018-04-01

    The "anomalous" Pockels effect is a phenomenon that a light beam passing between two electrodes in an aqueous electrolyte solution is deflected by an AC voltage applied between the electrodes: the deflection angle is proportional to the voltage such that the incident beam alternately changes its direction. This phenomenon, the Pockels effect in bulk water, apparently contradicts what is believed in nonlinear optics, i.e., macroscopic inversion symmetry should be broken for the second-order nonlinear optical effect to occur such as the first-order electro-optic effect, i.e., the Pockels effect. To clarify the underlying mechanism, the dependence of the effect on the electrode material is investigated to find that the Pockels coefficient with Pt electrodes is two orders of magnitude smaller than with indium tin oxide (ITO) electrodes. It is experimentally confirmed that the Pockels effect of interfacial water in the electric double layer (EDL) on these electrodes shows an electrode dependence similar to the effect in bulk water while the effects depend on the frequency of the AC voltage such that the interfacial signal decreases with frequency but the bulk signal increases with frequency up to 221 Hz. These experimental results lead to a conclusion that the beam deflection is caused by the refractive index gradient in the bulk water region, which is formed transiently by the Pockels effect of interfacial water in the EDL when an AC electric field is applied. The refractive index gradient is caused by the diffuse layer spreading into the bulk region to work as a breaking factor of inversion symmetry of bulk water due to its charge-biased ionic distribution. This mechanism does not contradict the principle of nonlinear optics.

  15. Properties of Bulk Sintered Silver As a Function of Porosity

    Energy Technology Data Exchange (ETDEWEB)

    Wereszczak, Andrew A [ORNL; Vuono, Daniel J [ORNL; Wang, Hsin [ORNL; Ferber, Mattison K [ORNL; Liang, Zhenxian [ORNL

    2012-06-01

    This report summarizes a study where various properties of bulk-sintered silver were investigated over a range of porosity. This work was conducted within the National Transportation Research Center's Power Device Packaging project that is part of the DOE Vehicle Technologies Advanced Power Electronics and Electric Motors Program. Sintered silver, as an interconnect material in power electronics, inherently has porosity in its produced structure because of the way it is made. Therefore, interest existed in this study to examine if that porosity affected electrical properties, thermal properties, and mechanical properties because any dependencies could affect the intended function (e.g., thermal transfer, mechanical stress relief, etc.) or reliability of that interconnect layer and alter how its performance is modeled. Disks of bulk-sintered silver were fabricated using different starting silver pastes and different sintering conditions to promote different amounts of porosity. Test coupons were harvested out of the disks to measure electrical resistivity and electrical conductivity, thermal conductivity, coefficient of thermal expansion, elastic modulus, Poisson's ratio, and yield stress. The authors fully recognize that the microstructure of processed bulk silver coupons may indeed not be identical to the microstructure produced in thin (20-50 microns) layers of sintered silver. However, measuring these same properties with such a thin actual structure is very difficult, requires very specialized specimen preparation and unique testing instrumentation, is expensive, and has experimental shortfalls of its own, so the authors concluded that the herein measured responses using processed bulk sintered silver coupons would be sufficient to determine acceptable values of those properties. Almost all the investigated properties of bulk sintered silver changed with porosity content within a range of 3-38% porosity. Electrical resistivity, electrical conductivity

  16. Millimeter wave surface resistance of grain-aligned Y1Ba2Cu3O(x) bulk material

    International Nuclear Information System (INIS)

    Wosik, J.; Kranenburg, R.A.; Wolfe, J.C.; Selvamanickam, V.; Salama, K.

    1990-04-01

    Measurements are reported of the millimeter-wave surface resistance of grain-aligned YBa2Cu3O(x) bulk material grown by a liquid-phase process. The measurements were performed by replacing the endplate of a TE(011) cylindrical copper cavity with the superconducting sample. Surface resistance was measured for samples with surfaces oriented perpendicular and parallel to the c-axis of the grains. For the parallel configuration, the surface resistance at 77 K and 80 GHz is given. For a very well-aligned sample with a very low density of Y2BaCuO(y) precipitates, measured in the perpendicular configuration, the transition width (10-90 percent) is about 2 K and the surface resistance is derived at 88 K. The effect of microstructure on surface resistance is discussed. 19 refs

  17. Millimeter wave surface resistance of grain-aligned Y1Ba2Cu3O(x) bulk material

    Science.gov (United States)

    Wosik, J.; Kranenburg, R. A.; Wolfe, J. C.; Selvamanickam, V.; Salama, K.

    1991-01-01

    Measurements of the millimeter wave surface resistance of grain-aligned YBa2Cu3O(x) bulk material grown by a liquid phase process are reported. The measurements were performed by replacing the endplate of a TE011 cylindrical copper cavity with the superconducting sample. Surface resistance was measured for samples with surfaces oriented perpendicular and parallel to the c-axis of the grains. It is shown that, for the parallel configuration, the surface resistance at 77 K and 80 GHz is typically near 100 milliohms. For a very well-aligned sample with a very low density of Y2BaCuO(y) precipitates, measured in the perpendicular configuration, the transition width (10-90 percent) is about 2 K, and the surface resistance is less than 50 milliohms at 88 K. The effect of microstructure on surface resistance is discussed.

  18. Millimeter wave surface resistance of grain-aligned Y1Ba2Cu3Ox bulk material

    International Nuclear Information System (INIS)

    Wosik, J.; Kranenburg, R.A.; Wolfe, J.C.; Selvamanickam, V.; Salama, K.

    1991-01-01

    We report measurements of the millimeter wave surface resistance of grain-aligned YBa 2 Cu 3 O x bulk material grown by a liquid phase process. The measurements were performed by replacing the endplate of a TE 011 cylindrical copper cavity with the superconducting sample. Surface resistance was measured for samples with surfaces oriented perpendicular and parallel to the c-axis of the grains. We show that, for the parallel configuration, the surface resistance at 77 K and 80 GHz is typically near 100 mΩ. For a very well-aligned sample with a very low density of Y 2 BaCuO y precipitates, measured in the perpendicular configuration, the transition width (10%--90%) is about 2 K and the surface resistance is less than 50 mΩ at 88 K. The effect of microstructure on surface resistance is discussed

  19. Pulsed laser deposition of epitaxial yttrium iron garnet films with low Gilbert damping and bulk-like magnetization

    Directory of Open Access Journals (Sweden)

    M. C. Onbasli

    2014-10-01

    Full Text Available Yttrium iron garnet (YIG, Y 3Fe5O12 films have been epitaxially grown on Gadolinium Gallium Garnet (GGG, Gd3Ga5O12 substrates with (100 orientation using pulsed laser deposition. The films were single-phase, epitaxial with the GGG substrate, and the root-mean-square surface roughness varied between 0.14 nm and 0.2 nm. Films with thicknesses ranging from 17 to 200 nm exhibited low coercivity (<2 Oe, near-bulk room temperature saturation moments (∼135 emu cm−3, in-plane easy axis, and damping parameters as low as 2.2 × 10−4. These high quality YIG thin films are useful in the investigation of the origins of novel magnetic phenomena and magnetization dynamics.

  20. Collapse of Incoherent Light Beams in Inertial Bulk Kerr Media

    DEFF Research Database (Denmark)

    Bang, Ole; Edmundson, Darran; Królikowski, Wieslaw

    1999-01-01

    We use the coherent density function theory to show that partially coherent beams are unstable and may collapse in inertial bulk Kerr media. The threshold power for collapse, and its dependence on the degree of coherence, is found analytically and checked-numerically. The internal dynamics of the...... of the walk-off modes is illustrated for collapsing and diffracting partially coherent beams.......We use the coherent density function theory to show that partially coherent beams are unstable and may collapse in inertial bulk Kerr media. The threshold power for collapse, and its dependence on the degree of coherence, is found analytically and checked-numerically. The internal dynamics...

  1. Reversible ultrafast melting in bulk CdSe

    International Nuclear Information System (INIS)

    Wu, Wenzhi; He, Feng; Wang, Yaguo

    2016-01-01

    In this work, transient reflectivity changes in bulk CdSe have been measured with two-color femtosecond pump-probe spectroscopy under a wide range of pump fluences. Three regions of reflectivity change with pump fluences have been consistently revealed for excited carrier density, coherent phonon amplitude, and lattice temperature. For laser fluences from 13 to 19.3 mJ/cm 2 , ultrafast melting happens in first several picoseconds. This melting process is purely thermal and reversible. A complete phase transformation in bulk CdSe may be reached when the absorbed laser energy is localized long enough, as observed in nanocrystalline CdSe

  2. Bulk Restoration for SDN-Based Transport Network

    Directory of Open Access Journals (Sweden)

    Yang Zhao

    2016-01-01

    Full Text Available We propose a bulk restoration scheme for software defined networking- (SDN- based transport network. To enhance the network survivability and improve the throughput, we allow disrupted flows to be recovered synchronously in dynamic order. In addition backup paths are scheduled globally by applying the principles of load balance. We model the bulk restoration problem using a mixed integer linear programming (MILP formulation. Then, a heuristic algorithm is devised. The proposed algorithm is verified by simulation and the results are analyzed comparing with sequential restoration schemes.

  3. Nuclear spin warm up in bulk n -GaAs

    Science.gov (United States)

    Kotur, M.; Dzhioev, R. I.; Vladimirova, M.; Jouault, B.; Korenev, V. L.; Kavokin, K. V.

    2016-08-01

    We show that the spin-lattice relaxation in n -type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, which cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is found in the quadrupole relaxation, induced by fluctuating donor charges. Therefore, quadrupole relaxation, which governs low field nuclear spin relaxation in semiconductor quantum dots, but was so far supposed to be harmless to bulk nuclei spins in the absence of optical pumping, can be studied and harnessed in the much simpler model environment of n -GaAs bulk crystal.

  4. Bulk-mediated surface diffusion: non-Markovian desorption dynamics

    International Nuclear Information System (INIS)

    Revelli, Jorge A; Budde, Carlos E; Prato, Domingo; Wio, Horacio S

    2005-01-01

    Here we analyse the dynamics of adsorbed molecules within the bulk-mediated surface diffusion framework, when the particle's desorption mechanism is characterized by a non-Markovian process, while the particle's adsorption as well as its motion in the bulk is governed by Markovian dynamics. We study the diffusion of particles in both semi-infinite and finite cubic lattices, analysing the conditional probability to find the system on the reference absorptive plane as well as the surface dispersion as functions of time. The results are compared with known Markovian cases showing the differences that can be exploited to distinguish between Markovian and non-Markovian desorption mechanisms in experimental situations

  5. Physical factors controlling the ductility of bulk metallic glasses

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Y. [Central South University, China; Liu, Chain T [ORNL; Zhang, Z. [University of Tennessee, Knoxville (UTK); Keppens, V. [University of Tennessee, Knoxville (UTK)

    2008-01-01

    In order to identify key physical factor controlling the deformation and fracture behavior of bulk metallic glasses (BMGs), we compiled and analyzed the elastic moduli and compressive ductility for BMGs. In addition, new modulus data were generated in the critical ranges in order to facilitate the analysis. We have found that the intrinsic ductility of BMGs can be correlated with the bulk-to-shear modulus ratio B/G according to Pugh's [Philos. Mag. 45, 823 (1954) ] rule. In some individual BMG systems, for example, Fe based, the relationship seems to be very clear. The physical meaning of this correlation is discussed in terms of atomic bonding and connectivity.

  6. X-ray photoelectron spectroscopy study of the growth kinetics of biomimetically grown hydroxyapatite thin-film coatings

    International Nuclear Information System (INIS)

    McLeod, K.; Kumar, S.; Dutta, N.K.; Smart, R.St.C.; Voelcker, N.H.; Anderson, G.I.

    2010-01-01

    Hydroxyapatite (HA) thin-film coatings grown biomimetically using simulated body fluid (SBF) are desirable for a range of applications such as improved fixation of fine- and complex-shaped orthopedic and dental implants, tissue engineering scaffolds and localized and sustained drug delivery. There is a dearth of knowledge on two key aspects of SBF-grown HA coatings: (i) the growth kinetics over short deposition periods, hours rather than weeks; and (ii) possible difference between the coatings deposited with and without periodic SBF replenishment. A study centred on these aspects is reported. X-ray photoelectron spectroscopy (XPS) has been used to study the growth kinetics of SBF-grown HA coatings for deposition periods ranging from 0.5 h to 21 days. The coatings were deposited with and without periodic replenishment of SBF. The XPS studies revealed that: (i) a continuous, stable HA coating fully covered the titanium substrate after a growth period of 13 h without SBF replenishment; (ii) thicker HA coatings about 1 μm in thickness resulted after a growth period of 21 days, both with and without SBF replenishment; and (iii) the Ca/P ratio at the surface of the HA coating was significantly lower than that in its bulk. No significant difference between HA grown with and without periodic replenishment of SBF was found. The coatings were determined to be carbonated, a characteristic desirable for improved implant fixation. The atomic force and scanning electron microscopies results suggested that heterogeneous nucleation and growth are the primary deposition mode for these coatings. Primary osteoblast cell studies demonstrated the biocompatibility of these coatings, i.e., osteoblast colony coverage of approximately 80%, similar to the control substrate (tissue culture polystyrene).

  7. X-ray photoelectron spectroscopy study of the growth kinetics of biomimetically grown hydroxyapatite thin-film coatings

    Energy Technology Data Exchange (ETDEWEB)

    McLeod, K. [Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Kumar, S., E-mail: sunil.kumar@unisa.edu.au [Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Dutta, N.K. [Ian Wark Research Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Smart, R.St.C. [Applied Centre for Structural and Synchrotron Studies, University of South Australia, Mawson Lakes, SA 5095 (Australia); Voelcker, N.H. [School of Chemistry, Physics and Earth Sciences, Flinders University of South Australia, GPO Box 2100, Adelaide 5001 (Australia); Anderson, G.I. [School of Veterinary Science, University of Adelaide, Adelaide, SA 5005 (Australia)

    2010-09-15

    Hydroxyapatite (HA) thin-film coatings grown biomimetically using simulated body fluid (SBF) are desirable for a range of applications such as improved fixation of fine- and complex-shaped orthopedic and dental implants, tissue engineering scaffolds and localized and sustained drug delivery. There is a dearth of knowledge on two key aspects of SBF-grown HA coatings: (i) the growth kinetics over short deposition periods, hours rather than weeks; and (ii) possible difference between the coatings deposited with and without periodic SBF replenishment. A study centred on these aspects is reported. X-ray photoelectron spectroscopy (XPS) has been used to study the growth kinetics of SBF-grown HA coatings for deposition periods ranging from 0.5 h to 21 days. The coatings were deposited with and without periodic replenishment of SBF. The XPS studies revealed that: (i) a continuous, stable HA coating fully covered the titanium substrate after a growth period of 13 h without SBF replenishment; (ii) thicker HA coatings about 1 {mu}m in thickness resulted after a growth period of 21 days, both with and without SBF replenishment; and (iii) the Ca/P ratio at the surface of the HA coating was significantly lower than that in its bulk. No significant difference between HA grown with and without periodic replenishment of SBF was found. The coatings were determined to be carbonated, a characteristic desirable for improved implant fixation. The atomic force and scanning electron microscopies results suggested that heterogeneous nucleation and growth are the primary deposition mode for these coatings. Primary osteoblast cell studies demonstrated the biocompatibility of these coatings, i.e., osteoblast colony coverage of approximately 80%, similar to the control substrate (tissue culture polystyrene).

  8. Characterization of as-grown and heavily irradiated GaN epitaxial structures by photoconductivity and photoluminescence

    International Nuclear Information System (INIS)

    Gaubas, E.; Jurs e-dot nas, S.; Tomasiunas, R.; Vaitkus, J.; Zukauskas, A.; Blue, A.; Rahman, M.; Smith, K.M.

    2005-01-01

    The influence of radiation defects on photoconductivity transients and photoluminescence (PL) spectra have been examined in semi-insulating GaN epitaxial layers grown on bulk n-GaN/sapphire substrates. Defects induced by 10-keV X-ray irradiation with a dose of 600Mrad and 100-keV neutrons with fluences of 5x10 14 and 10 16 cm -2 have been revealed through contact photoconductivity and microwave absorption transients. The amplitude of the initial photoconductivity decay is significantly reduced by the radiation defect density. A simultaneous decrease with radiation-induced defect density is also observed in the steady-state PL intensity of yellow, blue and ultraviolet bands peaked at 2.18, 2.85, and 3.42eV, respectively. The decrease of the PL intensity is accompanied by an increase of asymptotic decay lifetime, which is due to excess carrier multi-trapping. The decay can be described by the stretched exponential approximation exp[-(t/τ) α ] with different values of α in as-grown material (α∼0.7) and irradiated samples (α∼0.3). The value of the fracton dimension d s of the disordered structure, evaluated as d s =2α/(1-α), changes from 4.7 to 0.86 for as-grown and irradiated material, respectively, implying percolative carrier motion on an infinite cluster of dislocations net in the as-grown material and cluster fragmentation into finite fractons after irradiation

  9. Electronic structure of Fe1.08Te bulk crystals and epitaxial FeTe thin films on Bi2Te3

    Science.gov (United States)

    Arnold, Fabian; Warmuth, Jonas; Michiardi, Matteo; Fikáček, Jan; Bianchi, Marco; Hu, Jin; Mao, Zhiqiang; Miwa, Jill; Singh, Udai Raj; Bremholm, Martin; Wiesendanger, Roland; Honolka, Jan; Wehling, Tim; Wiebe, Jens; Hofmann, Philip

    2018-02-01

    The electronic structure of thin films of FeTe grown on Bi2Te3 is investigated using angle-resolved photoemission spectroscopy, scanning tunneling microscopy and first principles calculations. As a comparison, data from cleaved bulk Fe1.08Te taken under the same experimental conditions is also presented. Due to the substrate and thin film symmetry, FeTe thin films grow on Bi2Te3 in three domains, rotated by 0°, 120°, and 240°. This results in a superposition of photoemission intensity from the domains, complicating the analysis. However, by combining bulk and thin film data, it is possible to partly disentangle the contributions from three domains. We find a close similarity between thin film and bulk electronic structure and an overall good agreement with first principles calculations, assuming a p-doping shift of 65 meV for the bulk and a renormalization factor of around two. By tracking the change of substrate electronic structure upon film growth, we find indications of an electron transfer from the FeTe film to the substrate. No significant change of the film’s electronic structure or doping is observed when alkali atoms are dosed onto the surface. This is ascribed to the film’s high density of states at the Fermi energy. This behavior is also supported by the ab initio calculations.

  10. Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

    International Nuclear Information System (INIS)

    Pérez-Tomás, A.; Fontserè, A.; Llobet, J.; Placidi, M.; Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y.; Baron, N.

    2013-01-01

    The vertical bulk (drain-bulk) current (I db ) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I db (25–300 °C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E a ), the (soft or destructive) vertical breakdown voltage (V B ), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E a = 0.35 eV at T = 25–300 °C; V B = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E a = 2.5 eV at T > 265 °C; V B > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E a = 0.35 eV at T > 150 °C; V B = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

  11. Novel Approach in the Use of Plasma Spray: Preparation of Bulk Titanium for Bone Augmentations

    Directory of Open Access Journals (Sweden)

    Michaela Fousova

    2017-08-01

    Full Text Available Thermal plasma spray is a common, well-established technology used in various application fields. Nevertheless, in our work, this technology was employed in a completely new way; for the preparation of bulk titanium. The aim was to produce titanium with properties similar to human bone to be used for bone augmentations. Titanium rods sprayed on a thin substrate wire exerted a porosity of about 15%, which yielded a significant decrease of Young′s modulus to the bone range and provided rugged topography for enhanced biological fixation. For the first verification of the suitability of the selected approach, tests of the mechanical properties in terms of compression, bending, and impact were carried out, the surface was characterized, and its compatibility with bone cells was studied. While preserving a high enough compressive strength of 628 MPa, the elastic modulus reached 11.6 GPa, thus preventing a stress-shielding effect, a generally known problem of implantable metals. U-2 OS and Saos-2 cells derived from bone osteosarcoma grown on the plasma-sprayed surface showed good viability.

  12. Optical characterization of bulk Zn1-xBexTe crystals

    International Nuclear Information System (INIS)

    Shih, Y C; Huang, Y S; Firszt, F; Legowski, S; Meczynska, H; Tiong, K K

    2008-01-01

    This paper presents an optical characterization of three bulk sphalerite Zn 1-x Be x Te crystals grown by the modified high pressure Bridgman method. The study was conducted in the near-band-edge interband transition regime using low temperature photoluminescence (PL), temperature-dependent contactless electroreflectance (CER) and/or photoreflectance (PR) in the temperature range of 15-400 K, and surface photovoltage spectroscopy (SPS) at room temperature. PL spectra at low temperatures of the samples investigated consist of an excitonic line, a band due to recombination of free electrons with holes located at shallow acceptors and a broad band related to recombination through deeper level defects. The band-edge excitonic transitions have been observed in the CER/PR spectra. The fundamental transition energies E 0 are determined via lineshape fits to the CER/PR spectra. The values of E 0 at room temperature obtained from CER/PR spectra correspond well to that determined from SPS measurements, and the Be contents x of the samples are determined using a linear equation which describes the room temperature band gap dependence on composition for the Zn 1-x Be x Te alloy system. The parameters describing the temperature dependence of the band-edge excitonic transition energies are evaluated and discussed

  13. Bulk and surface electron transport in topological insulator candidate YbB{sub 6-δ}

    Energy Technology Data Exchange (ETDEWEB)

    Glushkov, Vladimir V.; Demishev, Sergey V.; Sluchanko, Nikolay E. [Prokhorov General Physics Institute of RAS, Vavilov str. 38, 119991, Moscow (Russian Federation); Moscow Institute of Physics and Technology, Institutskii per. 9, 141700, Dolgoprudny, Moscow Region (Russian Federation); Bozhko, Alexey D.; Bogach, Alexey V.; Semeno, Alexey V.; Voronov, Valeriy V. [Prokhorov General Physics Institute of RAS, Vavilov str. 38, 119991, Moscow (Russian Federation); Dukhnenko, Anatoliy V.; Filipov, Volodimir B.; Shitsevalova, Natalya Yu. [Frantsevich Institute for Problems of Materials Science NAS, Krzhyzhanovsky str. 3, 03680, Kiev (Ukraine); Kondrin, Mikhail V. [Vereshchagin Institute of High Pressure Physics of RAS, 142190, Troitsk, Moscow (Russian Federation); Kuznetsov, Alexey V.; Sannikov, Ilia I. [National Research Nuclear University ' ' MEPhI' ' , Kashirskoe Shosse 31, 115409, Moscow (Russian Federation)

    2016-04-15

    We report the study of transport and magnetic properties of the YbB{sub 6-δ}single crystals grown by inductive zone melting. A strong disparity in the low temperature resistivity, Seebeck and Hall coefficients is established for the samples with the different level of boron deficiency. The effective parameters of the charge transport in YbB{sub 6-δ} are shown to depend on the concentration of intrinsic defects, which is estimated to range from 0.09% to 0.6%. The pronounced variation of Hall mobility μ{sub H} found for bulk holes is induced by the decrease of transport relaxation time from τ ∼ 7.7 fs for YbB{sub 5.994} to τ ∼ 2.2 fs for YbB{sub 5.96}. An extra contribution to conductivity from electrons with μ{sub H}∼ -1000 cm{sup 2} V{sup -1} s{sup -1} and the very low concentration n /n{sub Yb}∼ 10{sup -6} discovered below 20 K for all the single crystals under investigation is suggested to arise from the surface electron states appeared in the inversion layer due to the band bending. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Synthesis and structural characterization of bulk Sb2Te3 single crystal

    Science.gov (United States)

    Sultana, Rabia; Gahtori, Bhasker; Meena, R. S.; Awana, V. P. S.

    2018-05-01

    We report the growth and characterization of bulk Sb2Te3 single crystal synthesized by the self flux method via solid state reaction route from high temperature melt (850˚C) and slow cooling (2˚C/hour) of constituent elements. The single crystal X-ray diffraction pattern showed the 00l alignment and the high crystalline nature of the resultant sample. The rietveld fitted room temperature powder XRD revealed the phase purity and rhombohedral structure of the synthesized crystal. The formation and analysis of unit cell structure further verified the rhombohedral structure composed of three quintuple layers stacked one over the other. The SEM image showed the layered directional growth of the synthesized crystal carried out using the ZEISS-EVOMA-10 scanning electron microscope The electrical resistivity measurement was carried out using the conventional four-probe method on a quantum design Physical Property Measurement System (PPMS). The temperature dependent electrical resistivity plot for studied Sb2Te3 single crystal depicts metallic behaviour in the absence of any applied magnetic field. The synthesis as well as the structural characterization of as grown Sb2Te3 single crystal is reported and discussed in the present letter.

  15. AlGaAs/GaAs quasi-bulk effect mixers: Analysis and experiments

    Science.gov (United States)

    Yngvesson, K. S.; Yang, J.-X.; Agahi, F.; Dai, D.; Musante, C.; Grammer, W.; Lau, K. M.

    1992-01-01

    The lowest noise temperature for any receiver in the 0.5 to 1 THz range has been achieved with the bulk InSb hot electron mixer, which unfortunately suffers from the problem of having a very narrow bandwidth (1-2 MHz). We have demonstrated a three order of magnitude improvement in the bandwidth of hot electron mixers, by using the two-dimensional electron gas (2DEG) medium at the hetero-interface between AlGaAs and GaAs. We have tested both inhouse MOCVD-grown material, and MBE materials, with similar results. The conversion loss (L(sub c)) at 94 GHz is presently 18 dB for a mixer operating at 20 K, and calculations indicate that L(sub c) can be decreased to about 10 dB in future devices. Calculated and measured curves of L(sub c), versus PLO and IDC, respectively, agree well. We argue that there are several different configurations of hot electron mixers, which will also show wide bandwidth, and that these devices are likely to become important as low-noise THz receivers in the future.

  16. Evidence that an internal carbonic anhydrase is present in 5% CO2-grown and air-grown Chlamydomonas

    International Nuclear Information System (INIS)

    Moroney, J.V.; Togasaki, R.K.; Husic, H.D.; Tolbert, N.E.

    1987-01-01

    Inorganic carbon (C/sub i/) uptake was measured in wild-type cells of Chlamydomonas reinhardtii, and in cia-3, a mutant strain of C. reinhardtii that cannot grow with air levels of CO 2 . Both air-grown cells, that have a CO 2 concentrating system, and 5% CO 2 -grown cells that do not have this system, were used. When the external pH was 5.1 or 7.3, air-grown, wild-type cells accumulated inorganic carbon (C/sub i/) and this accumulation was enhanced when the permeant carbonic anhydrase inhibitor, ethoxyzolamide, was added. When the external pH was 5.1, 5% CO 2 -grown cells also accumulated some C/sub i/, although not as much as air-grown cells and this accumulation was stimulated by the addition of ethoxyzolamide. At the same time, ethoxyzolamide inhibited CO 2 fixation by high CO 2 -grown, wild-type cells at both pH 5.1 and 7.3. These observations imply that 5% CO 2 -grown, wild-type cells, have a physiologically important internal carbonic anhydrase, although the major carbonic anhydrase located in the periplasmic space is only present in air-grown cells. Inorganic carbon uptake by cia-3 cells supported this conclusion. This mutant strain, which is thought to lack an internal carbonic anhydrase, was unaffected by ethoxyzolamide at pH 5.1. Other physiological characteristics of cia-3 resemble those of wild-type cells that have been treated with ethoxyzolamide. It is concluded that an internal carbonic anhydrase is under different regulatory control than the periplasmic carbonic anhydrase

  17. 75 FR 72909 - Revision to Electric Reliability Organization Definition of Bulk Electric System

    Science.gov (United States)

    2010-11-26

    ... Bulk-Power System. See Rules Concerning Certification of the Electric Reliability Organization; and... Bulk-Power System in North America because it protects the reliability of the bulk electric system and... Electric Reliability Organization Definition of Bulk Electric System; Final Rule #0;#0;Federal Register...

  18. 29 CFR 794.131 - “Customer * * * engaged in bulk distribution”.

    Science.gov (United States)

    2010-07-01

    ... 29 Labor 3 2010-07-01 2010-07-01 false âCustomer * * * engaged in bulk distributionâ. 794.131... Sales Made to Other Bulk Distributors § 794.131 “Customer * * * engaged in bulk distribution”. A sale to a customer of an enterprise engaged in the wholesale or bulk distribution of petroleum products will...

  19. Increasing minority carrier lifetime in as-grown multicrystalline silicon by low temperature internal gettering

    Energy Technology Data Exchange (ETDEWEB)

    Al-Amin, M., E-mail: m.al-amin@warwick.ac.uk; Murphy, J. D., E-mail: john.d.murphy@warwick.ac.uk [School of Engineering, University of Warwick, Coventry, CV4 7AL (United Kingdom)

    2016-06-21

    We report a systematic study into the effects of long low temperature (≤500 °C) annealing on the lifetime and interstitial iron distributions in as-grown multicrystalline silicon (mc-Si) from different ingot height positions. Samples are characterised in terms of dislocation density, and lifetime and interstitial iron concentration measurements are made at every stage using a temporary room temperature iodine-ethanol surface passivation scheme. Our measurement procedure allows these properties to be monitored during processing in a pseudo in situ way. Sufficient annealing at 300 °C and 400 °C increases lifetime in all cases studied, and annealing at 500 °C was only found to improve relatively poor wafers from the top and bottom of the block. We demonstrate that lifetime in poor as-grown wafers can be improved substantially by a low cost process in the absence of any bulk passivation which might result from a dielectric surface film. Substantial improvements are found in bottom wafers, for which annealing at 400 °C for 35 h increases lifetime from 5.5 μs to 38.7 μs. The lifetime of top wafers is improved from 12.1 μs to 23.8 μs under the same conditions. A correlation between interstitial iron concentration reduction and lifetime improvement is found in these cases. Surprisingly, although the interstitial iron concentration exceeds the expected solubility values, low temperature annealing seems to result in an initial increase in interstitial iron concentration, and any subsequent decay is a complex process driven not only by diffusion of interstitial iron.

  20. Morphology and oxide shell structure of iron nanoparticles grown by sputter-gas-aggregation

    International Nuclear Information System (INIS)

    Wang, C M; Baer, D R; Amonette, J E; Engelhard, M H; Qiang, Y; Antony, J

    2007-01-01

    The crystal faceting planes and oxide coating structures of core-shell structured iron/iron-oxide nanoparticles synthesized by a sputter-gas-aggregation process were studied using transmission electron microscopy (TEM), electron diffraction and Wulff shape construction. The particles grown by this process and deposited on a support in a room temperature process have been compared with particles grown and deposited at high temperature as reported in the literature. It has been found that the Fe nanoparticles formed at RT are invariantly faceted on the {100} lattice planes and truncated by the {110} planes at different degrees. A substantial fraction of particles are confined only by the 6{100} planes (not truncated by the {110} planes); this contrasts with the Fe particles formed at high temperature (HT) for which a predominance of {110} planes has been reported. Furthermore, at RT no particle was identified to be only confined by the 12{110} planes, which is relatively common for the particles formed at HT. The Fe cubes defined by the 6{100} planes show a characteristic inward relaxation along the and directions and the reason for this behaviour is not fully understood. The oxide shell on the Fe{100} plane maintains an orientation relationship: Fe(001) parallel Fe 3 O 4 (001) and Fe[100] parallel Fe 3 O 4 [110], which is the same as the oxide formed on a bulk Fe(001) through thermal oxidation. Orientation of the oxide that forms on the Fe{110} facets differs from that on Fe{001}: therefore, properties of core-shell structured Fe nanoparticle faceted primarily with one type of lattice plane may be fully different from that faceted with another type of lattice plane